text:
A memory may have access devices formed using a chalcogenide material. The access device does not induce a snapback voltage sufficient to cause read disturbs in the associated memory element being accessed. In the case of phase change memory elements, the snapback voltage may be less than the threshold voltage of the phase change memory element.
1. A memory comprising:
a cell including a chalcogenide access device and a memory element, the chalcogenide access device having a snapback voltage low enough to avoid disturbing data stored in the memory element while reading the memory element.
2. The memory of
3. The memory of
4. The memory of
5. The memory of
6. The memory of
7. The memory of
8. The memory of
9. The memory of
10. The memory of
11. A system comprising:
a processor-based device;
a wireless interface coupled to said processor-based device; and
a memory coupled to said device, said memory including a cell with a chalcogenide access device and a memory element, the chalcogenide access device having a snapback voltage low enough to avoid disturbing data stored in the memory element while reading the memory element.
12. The system of
13. The system of
14. The system of
15. The system of
16. The system of
17. The system of
18. The system of
19. The system of
20. The system of
21. The system of
This invention relates generally to memories utilized to store electronic information.
Generally, memories may include cells or bits arranged in rows and columns such that they may be individually accessed for reading, erasing, and programming. To this end, an access device, sometimes called a selection device, is provided to enable an individual bit on an individual row or column to be accessed. Thus, the row or column may include a number of cells or bits and one individual bit or cell along that column or row may be accessed by activating its access device.
Commonly, access devices are transistors or diodes. However, such access devices are formed in a semiconductor substrate. As a result, valuable real estate on the integrated circuit may be consumed for forming such access devices.
Thus, there is a need for better ways to access cells or bits in memories.
Referring to
In accordance with one embodiment of the present invention, the access device 14 may use a chalcogenide material. In some embodiments, the memory element 16 may also use a phase change material, but the present invention is not so limited and other memory elements, including a wide variety of thin film memory elements, may be utilized including metal oxide memory elements and paraelectric memory elements, to mention two examples.
In order to select an element 16 on column CN and row RN, the access device 14 for the selected memory element 16 at that location may be operated. The access device 14 activation allows current to flow through the memory element 16 in one embodiment of the present invention.
Referring to
After passing through the snapback region, in the on state, indicated at B, the device 14 voltage drop remains close to the holding voltage as the current passing through the device is increased up to a certain, relatively high, current level. Above that current level the device remains on but displays a finite differential resistance with the voltage drop increasing with increasing current. The device 14 may remain on until the current through the device 14 is dropped below a characteristic holding current value that is dependent on the size and the material utilized to form the device 14.
The snapback voltage is effectively the threshold voltage minus the holding voltage. By reducing the extent of the snapback voltage, read disturbs in the memory element 16 can be reduced. If the snapback voltage is sufficiently small, read disturbs can be avoided. In one embodiment of the present invention, the snapback voltage is reduced to that level that avoids read disturb problems in the associated memory element 16. In an embodiment where the memory element 16 also uses phase change material, the snapback voltage may be less than the threshold voltage of the memory element 16.
One advantage, in some embodiments, of using a chalcogenide material to form the access device 14 is that the access device 14 need not be formed in a semiconductor substrate. As a result, in some embodiments, stacks of memory arrays of the type shown in
In some embodiments of the present invention, the access device 14 does not change phase. It remains permanently amorphous and its current-voltage characteristics may remain the same throughout its operating life.
As an example, for a 0.5 micrometer diameter device 14 formed of TeAsGeSSe having respective atomic percents of 16/13/15/1/55, the holding current may be on the order of 0.1 to 100 micro-ohms in one embodiment. Below this holding current, the device 14 turns off and returns to the high resistance regime at low voltage, low field. The threshold current for the device 14 may generally be of the same order as the holding current. The holding current may be altered by changing process variables, such as the top and bottom electrode material and the chalcogenide material. The device 14 may provide high "on current" for a given area of device compared to conventional access devices such as metal oxide semiconductor field effect transistors or bipolar junction transistors.
In some embodiments, the higher current density of the device 14 in the on state allows for higher programming current available to the memory element 16. Where the memory element 16 is a phase change memory, this enables the use of larger programming current phase change memory devices, reducing the need for sub-lithographic feature structures and the commensurate process complexity, cost, process variation, and device parameter variation.
Referring to
With this approach, there is no bias voltage between the unselected rows and unselected columns. This reduces background leakage current.
After biasing the array in this manner, the memory elements 16 may be programmed and read by whatever means is needed for the particular memory technology involved. A memory element 16 that uses a phase change material may be programmed by forcing the current needed for memory element phase change or the memory array can be read by forcing a lower current to determine the device 16 resistance.
In accordance with another embodiment of the present invention, shown in
With this approach, there is a voltage bias between unselected rows and unselected columns of plus and minus V/3. This may contribute to additional background leakage current relative to the embodiments shown in FIG. 3. However, additional manufacturing margin may be provided for variability of threshold voltage in some embodiments.
After biasing the array in this manner, the memory element 16 can be programmed and read by whatever means is appropriate for the particular memory technology involved. A memory 16 using a phase change material may be programmed by forcing the current needed for the memory element to change phase or the memory array can be read by forcing a lower current to determine device resistance.
For the case of a phase change memory element 16, programming a given selected bit in an array can be as follows. Unselected rows and columns may be biased as shown in
Reading a phase change memory element 16 can be performed as follows. Unselected rows and columns may be biased as shown in
The above-described reading and programming protocols are merely examples of techniques that may be utilized. Other techniques may be utilized by those skilled in the art.
To avoid disturbing a set bit of memory element 16 that is a phase change memory, the peak current may equal the threshold voltage of the device 14 minus the holding voltage of the device 14 that quantity divided by the total series resistance including the resistance of the device 14, external resistance of device 16, plus the set resistance of device 16. This value may be less than the maximum programming current that will begin to reset a set bit for a short duration pulse.
A technique for manufacturing the devices 14 and 16, where both devices use chalcogenide material, that is particularly amenable to forming stacked arrays, is illustrated in
Referring to
Over the layer 12, a layer of dielectric 20 may be formed which, in one embodiment, may be oxide. A number of bottom electrodes 22 may be defined in the dielectric layer 20. In some embodiments, the electrodes 22 may be titanium silicon nitride. In such case, the electrodes 22 may ultimately act as heaters for a phase change material to be added subsequently.
Referring to
In one embodiment of the present invention, the structure that forms the memory element 16 may then be etched into a number of parallel lines and spaces (stripes) in the rowline direction, with the space between rowlines 28, shown in FIG. 7.
Referring to
In one embodiment, the phase change material 24 may be a phase change material suitable for non-volatile memory data storage. A phase change material may be a material having electrical properties (e.g., resistance) that may be changed through the application of energy such as, for example, heat, light, voltage potential, or electrical current.
Examples of phase change materials may include a chalcogenide material or an ovonic material. An ovonic material may be a material that undergoes electronic or structural changes and acts as a semiconductor once subjected to application of a voltage potential, electrical current, light, heat, etc. A chalcogenide material may be a material that includes at least one element from column VI of the periodic table or may be a material that includes one or more of the chalcogen elements, e.g., any of the elements of tellurium, sulfur, or selenium. Ovonic and chalcogenide materials may be non-volatile memory materials that may be used to store information.
In one embodiment, the memory material may be chalcogenide element composition from the class of tellurium-germanium-antimony (TexGeySbz) material or a GeSbTe alloy, although the scope of the present invention is not limited to just these materials.
In one embodiment, if the memory material is a non-volatile, phase change material, the memory material may be programmed into one of at least two memory states by applying an electrical signal to the memory material. An electrical signal may alter the phase of the memory material between a substantially crystalline state and a substantially amorphous state, wherein the electrical resistance of the memory material in the substantially amorphous state is greater than the resistance of the memory material in the substantially crystalline state. Accordingly, in this embodiment, the memory material may be adapted to be altered to one of at least two resistance values within a range of resistance values to provide single bit or multi-bit storage of information.
Programming of the memory material to alter the state or phase of the material may be accomplished by applying voltage potentials to the layers 12 and 26, thereby generating a voltage potential across the memory material 24. An electrical current may flow through a portion of the memory material 24 in response to the applied voltage potentials, and may result in heating of the memory material 24.
This heating and subsequent cooling may alter the memory state or phase of the memory material 24. Altering the phase or state of the memory material 24 may alter an electrical characteristic of the memory material 24. For example, resistance of the material 24 may be altered by altering the phase of the memory material 24. The memory material may also be referred to as a programmable resistive material or simply a programmable material.
In one embodiment, a voltage potential difference of about 0.5-1.5 volts may be applied across a portion of the memory material by applying about 0 volts to a lower layer 12 and about 0.5-1.5 volts to an upper layer 26. A current flowing through the memory material 24 in response to the applied voltage potentials may result in heating of the memory material. This heating and subsequent cooling may alter the memory state or phase of the material.
In a "reset" state, the memory material may be in an amorphous or semi-amorphous state and in a "set" state, the memory material may be in a crystalline or semi-crystalline state. The resistance of the memory material in the amorphous or semi-amorphous state may be greater than the resistance of the material in the crystalline or semi-crystalline state. The association of reset and set with amorphous and crystalline states, respectively, is a convention. Other conventions may be adopted.
Due to electrical current, the memory material may be heated to a relatively higher temperature to amorphize the memory material and "reset" memory material (e.g., program memory material to a logic "0" value). Heating the volume or memory material to a relatively lower crystallization temperature may crystallize memory material and "set" memory material (e.g., program memory material to a logic "1" value). Various resistances of memory material may be achieved to store information by varying the amount of current flow and duration through the volume of memory material.
The information stored in memory material 24 may be read by measuring the resistance of the memory material. As an example, a read current may be provided to the memory material using opposed layers 12, 26 and a resulting read voltage across the memory material 24 may be compared against a reference voltage using, for example, a sense amplifier (not shown). The read voltage may be proportional to the resistance exhibited by the memory storage element. Thus, a higher voltage may indicate that memory material is in a relatively higher resistance state, e.g., a "reset" state. A lower voltage may indicate that the memory material is in a relatively lower resistance state, e.g., a "set" state.
Moving to
Under the top electrode 34 is the material 32 that may be a chalcogenide material. An example of such a material is SiTeAsGeX in an atomic percent ratio of 14/39/37/9/1 where X is indium or phosphorous. Another example is SiTeAsGeSSe in the atomic percent ratio of 5/34/28/11/21/1. Still another example is TeAsGeSSe in the atomic percent of 16/13/15/1/55.
The material 32 may be made relatively thin so that The holding voltage is close to the threshold voltage. The thickness of the material 32 may be in the range of about 20 to about 500 Angstroms in some embodiments and most advantageously about 200 Angstroms in one embodiment.
Referring to
Referring to
Then, referring to
Appropriate metal connections may enable each row 12 of each element 16 to be coupled to receive appropriate electrical potentials for biasing, reading, programming from an overlying conductive line (not shown) via the plugs 46. Thus, a large number of the plugs 46 may be provided.
Similarly, each column of devices 14 may include a plug 44 which, through patterning of the layer 36, may provide individual connections to each column of devices 14.
Referring to
As a result of the configuration shown in
While an embodiment with a single access device 14 per cell or bit is illustrated, it is possible to use two or more access devices in series per bit or cell. This results in access devices 14 with effectively higher holding voltages and threshold voltages. For example, for a series combination of access devices, a combined threshold of about 3 volts and a combined holding voltage of about 2.8 volts may be achieved. More than two access devices may also be placed in series. Devices with different individual threshold voltages and holding voltages may be utilized to achieve a desirable targeted combination of holding and threshold voltages.
Turning to
The system 500 may include a controller 510, an input/output (I/O) device 520 (e.g., a keypad display), a memory 530, and a wireless interface 540 coupled to each other via a bus 550. It should be noted that the scope of the present invention is not limited to embodiments having any or all of these components.
The controller 510 may comprises, for example, one or more microprocessors, digital signal processors, microcontrollers, or the like. The memory 530 may be used to store messages transmitted to or by the system. The memory 530 may also be optionally used to store instructions that are executed by the controller 510. During the operation of the system 500 it may be used to store user data. The memory 530 may be provided by one or more different types of memory. For example, a memory 530 may comprise a volatile memory (any type of random access memory), a non-volatile memory such as a flash memory, and/or phase change memory that includes a memory such as, for example, memory element 16 and access device 14.
The I/O device 520 may be utilized to generate a message. The system 500 may use the wireless interface 540 to transmit and receive messages to and from a wireless communication network with a wireless radio frequency (RF) signal. Examples of the wireless interface 540 may include an antenna or a wireless transceiver, such as a dipole antenna, although the scope of the present invention is not limited in this respect.
While the present invention has been described with respect to a limited number of embodiments, those skilled in the art will appreciate numerous modifications and variations therefrom. It is intended that the appended claims cover all such modifications and variations as fall within the true spirit and scope of this present invention.
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Why You're Searching for 'April Ryan,' 'Miley Cyrus,' and 'Becky Griggs'
By Sam Brand Posted Dec 4th 2009 06:42PM
"April Ryan," "Miley Cyrus Tattoo," "Becky Griggs," and "Julia Corker" are surging in Google Trends? We can shed some light on the mystery. Google Trends provides the hottest keywords of the hour. Though the results change frequently, the list offers a snapshot of what's hot in the world of entertainment news. Here's what's steamin' tonight...
Becky Griggs – You don't have to be a fatty to find Becky Griggs' story fascinating. The 149 lb personal trainer weighed in at a whopping 352 lbs only six years ago. That's right, she lost over 200 lbs, and according to her, she didn't take any shortcuts on the long road to slimming down. She just stuck to a low-carb diet, "a super-simple plan of five small meals a day, focused on protein and something 'God grew,'" she tells CNN. "Food doesn' control me anymore, I control it," she continues. "And I work out."
Slim Fast Recall – Speaking of slimming down, consumer goods megaproducer Unilever has ordered all cans and cartons of "ready-to-drink" Slim Fast off the shelves and into the trash. Nasty bug Bacillus cereus turned up in a batch and the company received a handful of customer complaints of nausea and diarrhea. No spontaneous combustion or bleeding out the eyes. The bacteria isn't life threatening, but it's not much fun either.
April Ryan – Take note, do not mess with White House press secretary Robert Gibbs. If you're a member of the press, don't ask a dumb or "tabloid-y" question, especially during a press briefing meant to cover sending 30,000 additional troops to Afghanistan. Robert Gibbs will shoot you down, and he'll make you look bad, and you'll regret it. That's what he did to American Urban Radio reporter April Ryan on Wednesday. She pestered Gibbs about White House social secretary Desiree Roger's inflated role at the recently crashed state dinner. "Some might call her the belle of the ball, overshadowing the first lady," Ryan prodded. "April, calm down," Gibbs said, "take a deep breath. See, this happens with my son, he does the same thing." A gasp rang out from the crowd. Check the video right here.
World Cup Bracket – South African celeb Charlize Theron and FIFA general secretary Jerome Valcke presided over the drawing up of the 2010 World Cup bracket on Friday. The United States drew into a favorable grouping, facing low-end top seed England as well as Slovenia and Algeria in the first round. US coach Bob Bradley said at the event in South Africa, "We feel this is a group that gives us a real fair chance to move on." Anything less would be a disappointment for the upstart US squad. Brazil wasn't so lucky, drawing into the "Group of Death" which includes Ivory Coast, the first real African World Cup contender, as well as Portugal and North Korea.
Miley Cyrus Tattoo Pictures – Little Miley is all grown up. Maybe she grew up the day she appeared all but naked within the pages of Vanity Fair in April 2008. Maybe she's not grown up at all (she's still only 17 years old). But yeah, she's tatted up. Photographers caught her rocking a pink string bikini and captured the cursive "Just Breathe" under her left boob. See it here. 58% of PopEater readers are bothered that Miley has a tattoo at her age. Are you?
Julia Corker – This is one of those stories that discourages you from doing good deeds. Stories like this are kinda sad. But that doesn't mean they're necessarily bad stories. In fact, we're slightly tickled. Julia Corker, the 22-year-old daughter of Senator Bob Corker pulled over in D.C. to help out a man that looked lost. She rolled down her window, and started to tell him how to get where he was going, when suddenly a dude jumped into her passenger seat, threw her into the street, and sped off with her Chevy Tahoe. Julia was luckily unharmed and the Tahoe was found along with the two suspects. But now chances are she'll be a little less friendly to strangers in the future. To this we say, damn you bad apples!
- Friday 04 DecemberBy leroy
- Friday 04 December
w w w . e b u y i n g s . c o m
have some cheap things ...
ni ke sh oes, fa shion cl othes;br and han dbags,wa llet ...
If you think this site is good,you can put this site to collect bookmarks or other places, easy to find...
Page 1 of 1
celebrity one-stops
Jennifer Aniston
Is it Brad(ley) and Jen take 2? Jen was spotted out on the town with dreamboat ...
Paris Hilton
After Fairly Legal actress, Sarah Shahi, laid into Paris via Twitter for almost...
Kate Middleton
Kate Middleton is officially a princess. She walked the aisle in an Alexander...
Denise Richards
According to Denise, she's not sure that her estranged ex is completely sober....
Popeater Hot Topics
- Prince William Looks Forward to Taking Prince George, Princess Charlotte to Watch Soccer, Will Have to Ask "The Missus" Kate Middleton First!
- Reese Witherspoon, Sarah Michelle Gellar, Selma Blair Reunite for Cruel Intentions: Reenact Kiss
- Aquarius Premiere Recap: Everything You Need to Know About David Duchovny's Charles Manson Police Drama
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- ?Big Bang Theory' stars and execs fund scholarship for UCLA students
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- Cruel Intentions Reunion: Reese Witherspoon, Sarah Michelle Gellar and Selma Blair See the Musical: Pics!
- Two Genius Teens Tie as Champions of National Spelling Bee—See Their Insane Winning Words!
- Johnny Depp's Daughter, Lily-Rose, Celebrates Her ''Sour Sixteen'' With Family and Friends—See the Pics!
Sites We Love
- Rashida Jones' documentary shows how porn companies lure teenage girls
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subset: commoncrawl


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- Industrialized, Interoperable and Insight-driven Federal Health Panel
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Search Tags: weather
POLL: Are you a weather wimp?
Tags: Dorobek Insider , poll , telework , Tom Shoop , Government Executive
OPM: Unscheduled telework new option for feds
WFED's Jason Miller describes the new OPM guidance on telework during weather-related closings.
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Will snow affect Tuesday's operating status?
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D.C. feds can take unscheduled leave, telework on Wednesday
With a forecast that calls for freezing rain Tuesday night, OPM has announced that feds in the D.C. area have the option to take unscheduled leave or telework on Wednesday, for the second day in a row.
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OPM: D.C. feds can take unscheduled telework, leave on Tuesday
The Office of Personnel Management is giving feds the option for unscheduled leave or unscheduled telework on Tuesday due to an approaching storm. OPM says federal employees should talk to their managers now and make plans. OPM also says there is a chance of a delayed arrival on Tuesday if conditions dictate. Federal News Radio will keep you updated with the latest information.
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Weather delays federal government opening
Snow, ice, sleet, freezing rain combine to delay opening federal agencies in the Washington, DC area. The Office of Personnel Management has announced a two hour delayed arrival this morning for employees, who also have the option to take unscheduled leave or telework.
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Soaring temperatures break, tie area records
The official start to summer is still 12 days away, but you can't tell that from the temperatures.
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Pepco hopes to have the power restored in the District by noon. Some federal and D.C. government offices are closed.
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Get ready for hot and steamy day
A heat advisory went into effect at noon. The air quality for the day is a Code Orange. You may want to limit your time outside.
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By Christian Viveros-Fauné
Bridget Everett Whacks Rock Bottom at Joe's Pub
By Miriam Felton-Dansky
The Valley of Astonishment Will Leave You...Astonished
By Tom Sellar
By Tom Sellar
By Jessica Dawson
In September, Site-Specific Theater Rules the Day
By Tom Sellar
How Chuck Jones Defined America Through Cartoons
By R. C. Baker
Between Riverside and Crazy Bares Its Wounds
By Tom Sellar
Dancers Noe Barroso and Alejandra Zaballos take their alegrías to another level. The real-life couple argue; incapable of looking at each other, they somehow can't stay awayshe, proud as a peacock, shakes her tail at him, while he, indignant, circles her in disbelief. They challenge each other, snapping their fingers and thrusting backward on their heels. When their anger melds into desire they collide, and their bodies move in unison. The guitars instinctively switch the pace from intense to joyous.
The emotional range is more specific for Bruno Argenta, whose seriousness is rivaled only by Barrio's. His sophisticated farruca delivers a jolt of flash to the performance. The graceful dancer whips around, feet rapidly tapping, his long, lean body unrestrained as beads of sweat fly off his face. Guitarists Miguel Perez Garcia and Jesus Torres keep up with masterly speed and panache, transporting us directly from 42nd Street to the sidewalks of Seville. Grace Bastidas
"When in town," British choreographer Frederick Ashton wrote, "I am constantly longing for the country, never having been put to the test of a really prolonged stay." Ashton's 1960 La Fille mal gardée, which joined the American Ballet Theatre repertory May 31 at the Metropolitan Opera House, is an English fantasy of French country life, and the perfect vehicle to take New Yorkers both back in time and overseas, to a farm in an 18th-century summer. This endlessly delightful work, inflected with more than a beam of Bournonville sunniness, transpires practically in real time, on one day during the harvest.
Staged for ABT by Alexander Grant, Christopher Carr, and Grant Coyle of London's Royal Ballet, Fille focuses on young Lise, in love with a farmer, who outwits her vigilant mother and gets to keep her beau. They live in a village where everyone is always dancing, where ribbons betoken romance, hay is gathered (and dances arranged) with scythes, and the ardent Colas (performed the night I went by Carlos Acosta) stands by his gal (Nina Ananiashvili) even when he catches her fantasizing about spanking their babies.
Clog dances, sword dances, maypole dances, and other formations more native to the English countryside than to France dot this affectionate pastorale. (The chicken quintet, it can be safely said, is at least binational.) Ballet Theatre's good corps renders them all affectionately. Acosta's generous tour jetées ate up the stage, indicating Colas's sunny and expansive personality. Guillaume Graffin was suitably blustery in the travesty role of the Widow Simone. Carlos Lopez, a dorky pest as the immature suitor Alain, loses the girl but remembers his umbrella; though he's peripheral to the main action of the story, he manages to close every scene. Acosta, partnering Paloma Herrera, will swashbuckle through Le Corsaire June 17 and 20your last chance this season to see the troupe's new Cuban danseur. Elizabeth Zimmer
Beverly Brown, longtime leading member of the Erick Hawkins Dance Company, died of a stroke last month at 61. She taught dance and composed music, as well as producing a seminal monograph on Hawkins and experimenting with sound in her own choreography and for the Siddha Yoga community. Remember her June 22 at 3 p.m. at the Broome Corner Studio, 425 Broome Street, fourth floor. E.Z.
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Show Us Dad's "Trophy" And You Could Win!
Who spent all of those hours in the back yard with you patiently working on your curve ball? Dad. Then who did you say "hi" to when they interviewed you on the news when you won the game? Mom.
That's cold.
Father's are the unsung heroes of the family and it's time for us to give dad a little credit and a nice Father's Day! Every dad has a trophy. Whether it's his 1977 Mustang, his blue ribbon he won at the fair for his face-melting chilli, his vintage guitar collection, his record-breaking trout, or his "trophy" wife. We want to see it!


text:
Our Bureau
Pune, July 11
MAHINDRA & Mahindra has announced the launch of the newest entrant into its family of pick-ups, the Maxx Pik Up Flat Bed, targeted at the commercial and entrepreneur segment.
The Flat Bed will be rolled out initially in Maharashtra, which is its biggest market for the category with the company enjoying over 60 per cent market share, and will be rolled out nationwide within three months.
Announcing the launch, Mr Bipin Datar, General Manager (Sales), Automotive Sector, said that the new model would add to the company's sales significantly by tapping niche markets with its absolutely flat cargo box opening on three sides for effortless loading and unloading.
"The vehicle has been designed to address the commercial and small entrepreneur segment and with its attributes of space, fuel economy, comfort, and value for money pricing, it is a value proposition for both segments," said Mr Datar.
The Maxx Flat Bed powered by a 63 hp DI turbo diesel engine will carry a price tag of Rs 4.22 lakh ex-Pune and offer the highest payload of 1,160 kg in its category.


text:
10 camera techniques to master in 2014
10 camera techniques to master in 2014: learn basic TTL flash techniques
In this next section we'll introduce you to several basic TTL flash techniques that can transform your images.
Many people are deterred from using flash either by its perceived complexity or the harsh, unflattering light that it can produce. But with TTL (through the lens) exposure control and instant review to check your results, using flash doesn't have to be difficult.
The key to getting the most from your flash is understanding the relationship between the ambient exposure and the flash exposure. Just like taking a shot without flash, to improve your results using flash you'll need to set the exposure correctly for the lighting conditions. Then you need to get to grips with adjusting the exposure of the flash.
Flash exposure
Similar to using Automatic exposure mode on normal shots, the Automatic TTL flash exposure can give great results.
But there are times when you need to adjust the exposure to suit the subject, and the effect that you want to achieve. When using TTL flash you have control over two parts of the exposure – the ambient light and the flash.
The basic technique is to use the main Exposure Compensation control to adjust the ambient exposure, and then use the flash exposure compensation to control the light from the flash.
Unfortunately, the exact effect of these two controls varies a little for different manufacturers' flash systems.
On Canon EOS cameras the two compensation adjustments are completely separate, so when you adjust the main Exposure Compensation it doesn't have any effect on the flash.
The Nikon system works in a slightly different way to the Canon system, as the main Exposure Compensation affects both the ambient exposure and the flash, while the flash exposure compensation affects only the flash.
You will need to experiment a little with the exact settings to get the right effect, because with the Nikon system when you adjust the main Exposure Compensation setting to, say, -1, this will also reduce the flash exposure.
To return the flash exposure to 'normal' you have to set the flash exposure compensation to +1.
SEE MORE: 8 flash photography mistakes every photographer makes (and how to avoid them)
Tone down the flash exposure
This technique will reduce the amount of flash for a more subtle effect. Leave the Exposure Compensation on the camera set to 0, then set the flash exposure compensation to -1 to reduce the light from the flash.
This will make it less obvious that you have used flash in your final images.
Adding drama with flash
To make the subject stand out more, set the camera's Exposure Compensation to -1 to under-expose the background of your shot. Now set the flash exposure compensation to +1 (for Nikon) or leave it at zero (for Canon) to make the subject really stand out from the background.
Adding drama with flash
TTL radio triggers allow you to be more creative with lighting by positioning a flashgun off-camera. However, a TTL flash cord, such as those from Lastolite, retains all the automatic features of your flash at a fraction of the cost.
Camera Techniques for 2014: 01 Take control of focus
Camera Techniques for 2014: 02 Get white balance accurate every time
Camera Techniques for 2014: 03 How to focus on moving subjects
Camera Techniques for 2014: 04 How to use exposure compensation
Camera Techniques for 2014: 05 Ways to cope with high-contrast lighting
Camera Techniques for 2014: 06 How to position your subject in the frame
Camera Techniques for 2014: 07 Learn basic TTL flash techniques
Camera Techniques for 2014: 08 Sharpen photos like a pro
Camera Techniques for 2014: 09 How to control the saturation of colours
Camera techniques for 2014: 10 Add depth by using different apertures
Flash photography made easy: master everything from pop-up flash to using multiple flashguns
Flash photography basics: every common question answered
Off-camera flash: how to stop fearing your flashgun and take control of lighting
What is flash sync: what your flash modes do and how to use them (free cheat sheet)


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California Pizza Kitchen - Lenox Square
3393 Peachtree Road Northeast, Atlanta, GA 30326Map
Level 2, Lenox Square
+1 404 262 9221
Neighborhood: Lenox
Cuisine: American,Pizza
This restaurant is a great place to fuel up for a day at the sale racks, especially when you're looking for something more than a quick burger and fries. The restaurant occupies its own atrium, where guests dine in bright sunshine from skylights high above; choose a booth along the right for optimal views of the shoppers below. Pastas, salads and other light fare complete the menu, but the headliners are the unusual pizzas. An Asian chicken salad with fried noodles and Asian spice is also a popular choice.
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- Open Hours: Monday to Thursday from 11:30 AM to 09:00 PM, Friday to Saturday from 11:30 AM to 09:30 PM, Sunday from 11:30 AM to 07:00 PM
- Credit Cards Accepted: visa, mastercard, amex
- Delivery: Yes
- Takeout Available: Yes
- Nearest Train: Lenox
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