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IRVINE With U.S. bicycle sales in a slump, Irvine's Shimano American Corp. realized it needed to increase the number of bicyclists in America.
So Shimano started asking non-riders about what it would take to get them on a bicycle. The company, a unit of the Japanese bike-parts maker, learned that people weren't interested in riding for fitness or racing. In fact, they weren't too interested in riding at all. However, nearly everyone was nostalgic about bicycling.
"Almost to the person, everyone had some kind of fond memory of biking as a child, like freedom from their parents. All of a sudden, their world expands. We thought, that's one of the touch points we can work with," said Kozo Shimano, chief executive of the U.S. operation and the founder's grandson.
Using a mix of memories and its own technology, including a computer that automatically shifts gears, the company worked with design firm IDEO for six months. (CLICK HERE to watch a video that shows how the gears automatically shift.) They came up with the Coasting concept. Forget Lance Armstrong and tight-fitting bike shorts. The idea was to appeal to the emotions of how fun a bike was and is to ride, Shimano said.
"It's not about sweating and exercising. It's about socializing," Shimano said.
At first, only three bicycle manufacturers signed on. Each added its own touch. Trek's Lime coaster bike put extra storage under the seat and included various colors and a matching bell. Raleigh Bikes USA's Coasting Bike added a rack that fits a six-pack and includes a bottle opener. Giant Bicycles Inc.'s Suede and Suede DX bikes have a bag hanging from the handlebars. Prices range from $450 to $700.
All have coaster brakes so you back pedal to brake. They have kickstands. And they have Shimano's technology: a computer that automatically shifts the three-gear bicycles. Shimano didn't want people to have to think about shifting gears.
"Most people forget that when you come to a stop, you need to downshift so you're not starting in high gear," said Shannon Bryant, Shimano's "Coasting Girl."
Since going on sale last spring, Raleigh and Giant have sold out of the bikes. Trek's coaster bikes are still available.
"Growing the industry beyond the number of potential bikers is a great idea," said Reed Pike, Raleigh's director of marketing. "There are concepts all the time. But this one was complete. That was what was unique. It was not only a component, a shifting system, but with the help of the design firm IDEO, it had a look to it. To (Shimano's) credit, it turned out to be very, very successful."
Seven more manufacturers have signed up to work with Shimano. Kozi Shimano estimates that there will be 50,000 to 100,000 of the bikes sold in the first 12 months. That may not sound like a lot, he said, but for an industry that caters to racers and enthusiasts, that's a whole new market.
"This is the boldest concept in the industry in 25 years," said Jay Townley, with Gluskin Townley Group in Wisconsin, which specializes in bicycle market and consumer research.
The U.S. bike industry had its heyday in 1973, when 15.2 million bikes with 20-inch wheels or larger were sold. Last year, 12.7 million bicycles were sold, according to an estimate by the National Bicycle Dealers Association in Costa Mesa.
While the majority of bicycles are sold at mass-market stores, the bulk of revenue comes by the specialty bike shops, which sell about 16 to 18 percent of all bikes but account for 48 percent of the revenue, according to Townley.
"The reason why our market is flat and hasn't grown is we haven't made the shopping experience friendly for people who want to be part of the club," Townley said. "Will Coasting bikes rule the market? Yes, absolutely, if the retailers will get out of the way. There's a broader market than Lycra-clad males."


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Computer Databases
The computers in the Heritage Room include access to the library catalog and the library's on-line databases, as well as several CD-ROM databases of Adventist material.
The Ellen G. White CD-ROM allows complete keyword searching of all of Ellen White's works, and has considerable supplementary material as well. Find out what she said on a particular topic. Track down the quotation you've always been looking for. Compare different occurrences of the same term. From the Midnight Cry to the Second Coming, it's all there. We currently have the 3.0 version, Legacy of Light, and are committed to always having the most recent version available.
This is probably used more often than anything else in the Heritage Room. You can reach the same database on the Web at the Ellen G. White Estate.
The collected works of early Millerites and Adventists -- everyone other than Ellen White. An index to this CD-ROM, and an online version of it, are available through the Adventist Pioneer Library. Includes some early Adventist magazines.
A computer version of the standard Seventh-day Adventist reference work. There is currently no online version available.
Search five different versions of the Bible (KJV, ASV, NIV, Greek, and Hebrew texts), together with considerable indexing, reference, and commentary support.
Maps of the lands described in the Bible.
The online version of the index can be reached from anywhere on the Web, but so far it only goes back to 1979. The print version, which we have available, goes back to 1971, and in somewhat sketchy form to 1950. Generally, if something is in the SDA Periodical Index, we have the magazine article here.
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|Library Home Page
|La Sierra University
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Last updated
April 15, 2013

subset: commoncrawl


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Dr. Ben Carson warns all Americans that he personally is having "great difficulty" locating doctors with anything positive to say about the "Affordable" Care Law.
Speaking with Stuart Varney at the Fox News Channel, Dr. Carson mentioned that he has spoken to literally hundreds of physcians across the country about the healthcare law. In his words, "not one liked President Barack Obama's signature healthcare law.
Dr. Carson added, "It's profoundly affecting what they are doing. People didn't sign up to become government employees. They signed up because they were intellectually gifted and wanted to use those gifts, to bring health to their patients, not to satisfy some bureaucrat."
Interestingly, the retired pediatric neurosurgeon, who is a staunch Republican (unusual for blacks), is seriously considering a run for president in 2016.
In his opinion, "It requires real planning. You have to get experts. You have to realize that you aren't the expert at everything, but that you have to have access to them and you have to know how to coordinate them. Why they weren't able to do this with something that is one sixth of our economy makes you scratch your head."
Carson retired in May from the Johns Hopkins University School of Medicine in Baltimore. His first splash on the national scene was attacking the president's policies at a keynote address at a Prayer Breakfast.
It became memorable because the president was only feet away from him during his diatribe against him and his administration.
He followed that national notoriety when he told the conservative Values Voter Summit that Obamacare is "the worst thing that has happened in this nation since slavery."
If not president, he appears to be an ideal candidate for vice-president with so many others already burying him with their own campaign coffers brimming.
* If you have enjoyed this column, may I suggest you scroll down this page and press the SUBSCRIBE box? It's FREE. Thank you for your patronage.
** Send your comments to: firstname.lastname@example.com


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Various processes and related systems are provided for making structures on substrate surfaces. Disclosed are methods of making a structure supported by a substrate by providing a substrate having a receiving surface and exposing at least a portion of the receiving surface to output from a remote plasma of an inert gas. The remote plasma has an energy low enough to substantially avoid etching or sputtering of the receiving surface but sufficient to generate a treated receiving surface. The treated surface is contacted with a deposition gas, thereby making the structure supported by the substrate.
1. A method of making a structure supported by a substrate, said method comprising the steps:
a. providing said substrate having a receiving surface;
b. exposing at least a portion of said receiving surface of said substrate to output from a remote plasma of an inert gas, said remote plasma having an energy low enough to substantially avoid etching or sputtering of said receiving surface; wherein the output of said remote plasma exposes said receiving surface to a current less than or equal to 70 nAmps cm−2 thereby generating a treated receiving surface; and
c. contacting said treated receiving surface with a deposition gas; thereby making said structure supported by said substrate.
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31. A method of activating a substrate surface, said method comprising the steps:
a. providing said substrate having a receiving surface; and
b. exposing at least a portion of said receiving surface of said substrate to output from a remote plasma of an inert gas, said remote plasma having an energy low enough to substantially avoid etching or sputtering of said receiving surface; wherein the output of said remote plasma exposes said receiving surface to a current less than or equal to 70 nAmps cm−2 thereby generating a treated receiving surface.
This application claims the benefit of U.S. provisional application 61/057,368 filed May 30, 2008, which is incorporated by reference in its entirety to the extent not inconsistent with the disclosure herein.
Processes and systems provided herein generally relate to the field of material deposition. In particular, disclosed processes and systems provide for effective nucleation of thin films useful in various deposition techniques that grow material on a substrate to access formation of smooth and uniform thin films which may be used in microelectronics, MEMS, and other technologies.
Chemical vapor deposition (CVD) is a common technique for depositing thin films for various applications including integrated circuits, MEMS, and hard coatings. Atomic layer deposition (ALD) is another such technique, which has the capability to deposit highly conformal and uniform coatings of controlled thickness. Both of these processes begin with a nucleation step, which involves the formation of clusters of atoms of the material to be deposited onto the substrate surface. Very frequently, poor nucleation is a problem associated with these two deposition techniques. The ease of nucleation determines the film smoothness, microstructure and other properties in the later stages of film growth. For example, if nucleation is sparse, islands form on the surface and film continuity is not achieved until the layer is relatively thick. To synthesize continuous films of low thickness, the nucleation should be dense so as to avoid the existence of substrate surface with no nuclei present. On the other hand, it is important the treatment not modify the surface by sputtering, chemical reaction, etching or the like.
Reactive plasma exposure like O2, N2, NH3, H2 or halogen (F, Cl, B, I)-based gas have been used to pretreat a substrate surface prior to CVD or ALD (see U.S. Pat. Nos. 6,605,549, 6,638,859, 6,613,695). Those treatments, however, rely on reactive gases or radicals of these gases generated from the plasma, and thereby have attendant reconfiguration of surfaces. In either case, the idea is to change the surface termination from the initial state to either —OH, N, NH2 or —X terminated state, X being a halogen. This termination makes the surface more reactive to CVD/ALD precursors. Once the surface termination has changed, the CVD or ALD precursor adsorbs and reacts better on these terminations thus rendering better nucleation characteristics. That process, however, suffers from a limitation related to an interface between the film and the surface that is no longer pristine. Instead, the surface contains an additional layer of foreign atoms, which might be disadvantageous with regard to an electrical, optical and/or magnetic property of a system in which the processed surface is incorporated.
Another reported method for providing surface activation is by high-energy ion bombardment of the substrate to create defects on its surface. For example, Lim et al. (Thin Solid Films Vol. 475, p. 194) use Ar plasma exposure pretreatment to enhance nucleation of Ruthenium on a TaSiN surface. That idea, however, is based on bombarding the surface with high energy Ar+ ions, thereby etching it. Some researchers have also tried biasing the substrate to produce higher energy ion bombardment to enhance nucleation on the substrates. Such energetic pretreatment methods are not desirable in most thin film applications as they cause unwanted chemical or physical interactions with the surface, thereby interfering with functionality or adversely impacting layer geometry.
U.S. Pat. No. 6,613,695 relates to surface preparation prior to depositing a layer on the surface in an attempt to more readily nucleate poly-silicon and poly-SiGe or to more readily adsorbs ALD reactants. That process, however, pretreats by introducing relatively high energy F, Cl, H or N radicals produced by plasma product treatment. Accordingly, the surface treatment causes a change in the surface termination of the substrate to facilitate subsequent deposition. Such a change in surface termini can adversely impact desired functions and characteristics of the end system in which the processed substrate is incorporated.
Layer uniformity can become particularly problematic in conventional processing techniques used to make ultrathin layers (e.g., ultrathin gate oxides) in the less than 10 nm range. Films of such thicknesses are commonly associated with unacceptably high levels of defects, such as pinholes. The defects result in leakage currents during use, rapid device breakdown and other functional defects. Accordingly, relatively simple systems and processes capable of accessing relatively uniform and thin structures, such as thin films supported by a substrate, are needed.
The processes provided herein yield superior film growth via enhanced nucleation and rely on the use of activated species of relatively low energy to achieve good nucleation without sputtering or otherwise damaging or degrading the surface. In this manner, uniform structures that are relatively thin can be reliably achieved, including thin films that are supported by an underlying receiving surface, without significantly impacting the surface as often occurs during conventional processing techniques including pretreatment processing. Substrate activation provided by the present methods provides for generation of uniform thin films, optionally conformal thin films, having low defect levels, and thin films having useful substrate-thin film interface properties.
The processes and systems described herein activate regions of the receiving surface of the substrate by activating the surface in a manner that avoids or at least substantially avoids etching or sputtering of the surface. Examples of species capable of such surface activation include output from a remote plasma of an inert gas such as, for example, a metastable species. To minimize unwanted interaction between the species, or an other material generated directly or indirectly from the species, the current at the receiving surface attributed to the introduced species can be monitored such that the current remains below a user-selected current density. Similarly, the energy of species provided for substrate activation by the remote plasma may be selected to remain below a user-selected energy level. As used herein, "activation" refers to surface treatment so as to enhance nucleation and growth of uniform films. The treatment may be a pretreatment where activation occurs prior to material deposition. The treatment may be a treatment that occurs during deposition. The treatment may comprise both a pretreatment and a treatment during deposition. Flux, duration of exposure, temperature are examples of other variables that may be optionally selected to further control process conditions to thereby influence final structure configuration and properties.
In general, various processes provided herein facilitate methods of surface activation by treatment without sputtering or other undesirable surface or substrate chemical interaction. The treatment affords a very high nucleation density and hence, fast coalescence during the film or structure deposition. By this treatment, in an aspect, a metal-based film on silicon is achieved that is fully coalesced of less than about 5 nm in thickness with a rms roughness less than about 1 nm. In an aspect, the treatment relates to exposing a surface to a metastable species, such as generated plasma of an inert or noble gas like argon, helium, neon, xenon and/or exposing a surface to high energy electromagnetic radiation such as photons sufficient to activate the surface, for example by photochemical and photothermal processes that remove H termination and generate dangling bonds. These species have sufficient energy to create nucleation sites on the substrate or otherwise enhance nucleation conditions but are of sufficiently low energy to not damage or remove surface atoms on the receiving surface.
Processes disclosed herein facilitate nucleation enhancement during thin film deposition following a surface treatment. The treatment involves exposure of the substrate to gaseous species (low energy ions, metastables, or electrons) and/or photons from a noble gas plasma generated outside the deposition chamber. Activation can be achieved via exposure of the surface to gaseous species (low energy ions, metastables, or electrons) and/or photons prior to thin film deposition or co-treatment via exposure of the surface to gaseous species (low energy ions, metastables, or electrons) and/or photons during thin film deposition. After or during the treatment, the substrate is exposed to the precursor molecule used in the CVD or ALD growth process. With the treatment of the substrate, the nucleation is very rapid, and fully coalesced films are achieved at a low film thickness. Without the treatment, nucleation is difficult and large islands form before coalescence is achieved. This is confirmed experimentally via atomic force microscopy (AFM) images of the film with and without treatment. With treatment, a typical roughness of a fully coalesced film has a root-mean-squared (rms) value of <7.5 Å, about three times less than for a film deposited without the treatment.
In an embodiment, the invention is a method of making a structure supported by a substrate by providing a substrate having a receiving surface and exposing at least a portion of the receiving surface to output from a remote plasma of an inert gas. In an aspect, the remote plasma has an energy low enough to avoid or substantially avoid etching or sputtering of the receiving surface. Etching refers to removal of atomic species contained in the surface. Sputtering refers to deposition of unwanted material on the surface. In an aspect the output of the remote plasma exposes the receiving surface to a current less than or equal to a user-selected current, such as less than about 100 nAmps, or a range that is between about 20 nAmps and 80 nAmps. The current is optionally further described as per unit surface area, such as the surface area of the substrate surface being processed. Although the processes provided herein are not limited to any specific substrate surface area, examples are surface areas ranging from between 100 nm2 and 100 cm2, so that current per unit surface area may be less than or equal to about 50 nAmps cm−2, thereby generating a treated receiving surface. A deposition gas contacts the treated receiving surface to make the structure supported by a substrate. In an aspect, the structure is a thin film, such as films having a thickness less than about 1000 nm, 100 nm, 10 nm or 1 nm, for example.
In another embodiment, the remote plasma is a noble gas plasma, for example a plasma of He gas, Ar gas, Ne gas, Kr gas, Xe gas or any combination of these gases.
Any of the methods described herein can be further defined in terms of the energy of the remote plasma. In an embodiment, the remote plasma has an energy less than or equal to a user selected potential. Alternatively, the remote plasma has an energy selected over the range of 1 eV to 100 eV, or about 20 eV. In an embodiment, the remote plasma energy level is selected to achieve an electron energy level downstream such as in the deposition chamber of less than 1 eV, less than 0.5 eV, between 0.1 eV and 0.3 eV, or an energy level that avoids or minimizes unwanted surface substrate interactions.
In an embodiment, the remote plasma energy is selected to have a value low enough such that the output of the remote plasma is substantially not incorporated into the substrate upon the exposing step.
In another embodiment, the invention further comprises the step of removing electrons, ions or both from the output of the remote plasma. Optionally, the step of removing electrons, ions or both from the output of the remote plasma is achieved by contacting the output with a surface capable of scavenging the electrons, ions or both prior to exposure of the output to the receiving surface.
In an aspect, the output from the remote plasma provides a flux of metastable species to the receiving surface of the substrate, such as a user-selected flux. Examples of metastable species include, but are not limited to, compositions comprising excited species and/or electronically excited species. In an embodiment of this aspect, the electronically excited species are electronically excited Ar atoms, electronically excited He atoms, electronically excited Ne atoms, or clusters or combinations of these. In another embodiment, the output from the remote plasma provides a user-selected flux of radicals to the receiving surface.
In an embodiment, the receiving surface of the substrate is exposed to the output of the remote plasma for a duration, such as a duration selected over the range of 10 seconds to 10 minutes. In an embodiment, the receiving surface is provided at a temperature, such as room temperature or selected from the range of about 20� C. to 800� C. during the step of exposing at least a portion of the receiving surface of the substrate to the output from the remote plasma.
In an aspect, the substrate is provided in a deposition chamber, such as in a configuration wherein the remote plasma is provided outside of the deposition chamber. In an embodiment, the output of the plasma is provided to the deposition chamber via a conduit, such as a conduit that is a glass tube or other surface that optionally scavenges electrons, ions or both from the output of the remote plasma.
In an embodiment, the step of exposing at least a portion of the receiving surface of the substrate to output from the remote plasma generates a plurality of nucleation sites on the received surface of the substrate. In another embodiment, the step of exposing at least a portion of the receiving surface of the substrate to output from the remote plasma makes at least a portion of the receiving surface atomically clean. Alternatively, the step of exposing at least a portion of the receiving surface of the substrate to output from the remote plasma dehydrogenates at least a portion of the received surface of the substrate.
Any of the methods provided herein optionally comprise the step of passivating the receiving surface of the substrate prior to the exposing step. In an embodiment, the passivating step comprises the steps of contacting the receiving surface with HF acid and rinsing the receiving surface with deionized water.
In an aspect, the deposition gas is a chemical vapor deposition precursor gas or an atomic layer deposition precursor gas. In another aspect, the deposition gas is one or more transition metal, f-metal, or main group compounds bearing ligands of various types, including but not limited to: hydrides, borohydrides, halides, oxides, alkoxides, hydroxides, beta-diketonates, carboxylates, siloxides, thiolates, sulfides, nitrides, amides, imides, beta-diketiminates, pyrazolates, trazolates, amidinates, nitrites, nitrates, azides, alkyls, aryls, cyclopentadienyls, ethers, sulfides, ketones, aldehydes, amines, nitriles, isonitriles, phosphines, phosphites, arsines, stibines, carbonyls, olefins, alkynes, arenes, and cyclooctatetraenes. In an exemplified embodiment, HF(BH4)4 is introduced to a receiving surface comprising silicon, although the processes are compatible with nucleation of other CVD and ALD precursor materials known in the art and/or a range of other receiving surface materials.
In an embodiment, the invention relates to specific substrates and devices made by any of the methods provided herein. In an aspect, the substrate is a semiconductor substrate, such as a semiconductor material selected from the group consisting of silicon, germanium, gallium arsenide, indium phosphide, silicon germanium, aluminum gallium arsenide.
In an embodiment the substrate is a device substrate prepatterned with one or more device components.
In an embodiment, a thin film structure made by any of the methods disclosed herein is a fully coalesced thin film having a thickness less than or equal to 10 nm. In an embodiment, the thin film structure is a thin film having a root mean squared roughness less than or equal to 1 nanometer. In an aspect the thin film structure comprises a material selected from the group consisting of a metal, a metal oxide, a metal nitride or other material corresponding to the precursor gas.
Any of the methods provided herein are used to make a device, such as a device selected from the group consisting of an electronic device, an opto-electronic device, an optical device, a microelectromechanical system, and a nanoelectromechanical system.
In another embodiment, provided is a method of making a structure supported by a substrate by providing the substrate having a receiving surface and contacting the receiving surface of the substrate with a flux of metastable species. The kinetic energies and compositions of the metastable species are selected to substantially avoid etching or sputtering of the receiving surface and to substantially avoid incorporation of the metastable species into the substrate, thereby generating a treated receiving surface. Contacting the treated receiving surface with a deposition gas provides the structure supported by the substrate. In an aspect, any of the methods are used to make a structure that is a thin-film.
In an embodiment, any of the methods provide a flux of metastable species that is user-selectable, or a flux of metastable species that exposes the receiving surface to a current less than or equal to about 50 nAmps cm−2. In an aspect, the metastable species have kinetic energies less than or equal to 50 eV. In another aspect, the metastable species are electronically excited species, such as electronically excited noble gas atoms, electronically excited Ar atoms, electronically excited He atoms, electronically excited Ne atoms, or clusters or combinations of these. In an aspect, the metastable species are chemically inert.
Any of the methods disclosed herein relate to the receiving surface of the substrate that is contacted with the flux of metastable species for a duration, such as a duration selected over the range of 10 seconds to 10 minutes.
In an embodiment, any of the methods provided herein generate a flux of metastable species that provides a flux of radicals to the receiving surface less than or equal to a user-selected flux. Alternatively, the flux of metastable species provides a flux of ions to the receiving surface less than or equal to a user-selected flux.
In an aspect, the flux of metastable species is generated using a technique selected from the group consisting of a remote plasma, laser excitation, or other process as known in the art.
In an embodiment, the step of contacting the receiving surface of the substrate with the flux of metastable species generates a plurality of nucleation sites on the received surface of the substrate. In an embodiment, the step of contacting the receiving surface of the substrate with the flux of metastable species and/or other species output from the remote plasma makes at least a portion of the receiving surface atomically clean. In an embodiment, the step of contacting the receiving surface of the substrate with the flux of metastable species dehydrogenates at least a portion of the received surface of the substrate.
Without wishing to be bound by any particular theory, there can be discussion herein of beliefs or understandings of underlying principles relating to the invention. It is recognized that regardless of the ultimate correctness of any mechanistic explanation or hypothesis, an embodiment of the invention can nonetheless be operative and useful.
"Structure" is used broadly herein to refer to deposition of a material on a substrate. The material may spatially vary over the surface of the substrate or may optionally be relatively uniform over the surface and correspond to a structure that is a layer or film supported by a substrate. "Film" refers to a conformal coating layer of a surface. Film or thin film refers to a layer that comprises a coating of atoms, molecules or ions or mixtures and/or clusters thereof. Thin film layers may comprise a single-layer having a substantially constant composition, a single layer having a composition which varies as a function of physical thickness or a plurality of thin films layers. Thin film layers include but are not limited dielectric materials, semiconductors, conducting materials, organic materials such as polymers and any combinations of these materials. In an embodiment, reference to thin dielectric layers includes but is not limited to metal oxide, metalloid oxide and salt thin films. Metal oxides, metalloid oxides and salts useable herein include, but are not limited to, Ag, Au, Ta2O5, SiO2, HfO2, TiO2, MgF2, AlO2, CaF2, Nb2O5, glass or mixtures of these materials. Thin metalloid and metal layers include but are not limited to Si and Al. Thin film layers may have any size, shape, physical thickness or optical thickness suitable for a selected application. In an aspect a plurality of deposited structures may form a pattern of structures on the substrate.
"Substrate" refers to any surface upon which a structure is to be deposited. Examples include, but are not limited to, semiconductive substrates useful in the field of microelectronics such as integrated circuits (IC). Other suitable substrate materials include, but are not limited to, wafers, silicon and compositions containing silicon, glass substrates, low-k dielectric materials such as low-k polymeric dielectrics or organic-containing silicon dioxide or carbon-doped oxide (CDO) dielectric and other substrate materials known in the art of IC manufacture and as discussed in U.S. Pat. No. 6,605,549.
"Substantially avoid" refers to making the structure on the substrate in a manner that does not physically or chemically alter the substrate in a detectable or functional manner. For example, the deposition does not substantially etch or sputter the substrate's receiving surface as occurs in other processes known in the art. Although minor etching or sputtering may be a side-effect of the processes disclosed herein, providing appropriate low energy and composition output from a remote plasma or a metastable species provides substantially no etching or sputtering compared to conventional methods known in the art (see, e.g., U.S. Pat. Nos. 6,613,695; 7,056,835; 6,638,859; 7,202,166) that generally utilize higher energy or incompatible species that result in undue surface or substrate modifications.
Similarly, "substantially not incorporated" refers to a remote plasma output material that does not significantly alter the substrate or the receiving surface of the substrate in a measurable or quantifiable manner.
"Metastable species" refers to an excited state of a species, including atoms from inert gases, where the species is unstable and transient but relatively long-lived. In an embodiment, metastable species refer to electronically excited gas phase species. The particularly energy level of the metastable is not important, so long as the metastable does not reconfigure the substrate receiving surface to which the metastable is exposed. A metastable atom is likely to remain stable until interaction with the receiving surface, wherein the metastable mediates surface activation for receiving subsequent deposition to generate structures on the substrate.
"Nucleation sites" refers to regions on the receiving surface wherein a plurality of atoms of the material to-be-deposited cluster and promote further deposition. Processes disclosed herein can achieve relatively high density of nucleation sites. In an embodiment, the density of nucleation sites is greater than that provided using conventional CVD or ALD methods.
"Atomically clean" refers to a receiving surface that does not contain an additional layer of foreign atoms, such as foreign atoms that might be disadvantageous with regard to an electrical, optical and/or magnetic property of the system. The foreign atoms may be introduced from the surrounding environment, the remote plasma, or indirectly from the remote plasma and/or environment.
"Remote" refers to plasma generation in a region that is physically separated from where the receiving surface is located. The output from the remote plasma is then conveyed and exposed to the receiving surface.
"Passivated" or "passivating" refers to pre-processing a receiving surface by terminating surface bonds with hydrogen. One example of a passivating step is terminating silicon bonds with hydrogen by contacting the receiving surface with an acid, such as HF, followed by rinsing, such as rinsing with deionized water.
"Semiconductor" refers to any material that is an insulator at a very low temperature, but which has an appreciable electrical conductivity at a temperatures of about 300 Kelvin. In the present description, use of the term semiconductor is intended to be consistent with use of this term in the art of microelectronics and electronic devices. Semiconductors useful in the present invention may comprise element semiconductors, such as silicon, germanium and diamond, and compound semiconductors, such as group IV compound semiconductors such as SiC and SiGe, group III-V semiconductors such as AlSb, AlAs, Aln, AlP, BN, GaSb, GaAs, GaN, GaP, InSb, InAs, InN, and InP, group III-V ternary semiconductors alloys such as AlxGa1-xAs, group II-VI semiconductors such as CsSe, CdS, CdTe, ZnO, ZnSe, ZnS, and ZnTe, group I-VII semiconductors CuCl, group IV-VI semiconductors such as PbS, PbTe and SnS, layer semiconductors such as Pbl2, MOS2 and GaSe, oxide semiconductors such as CuO and Cu2O. The term semiconductor includes intrinsic semiconductors and extrinsic semiconductors that are doped with one or more selected materials, including semiconductor having p-type doping materials and n-type doping materials, to provide beneficial electronic properties useful for a given application or device. The term semiconductor includes composite materials comprising a mixture of semiconductors and/or dopants. Specific semiconductor materials useful in some applications of the present invention include, but are not limited to, Si, Ge, SiC, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InP, InAs, GaSb, InP, InAs, InSb, ZnO, ZnSe, ZnTe, CdS, CdSe, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, PbS, PbSe, PbTe, AlGaAs, AlInAs, AlInP, GaAsP, GaInAs, GaInP, AlGaAsSb, AlGaInP, and GaInAsP.
The deposition process may be selected as desired depending on the application, structure or thin layer composition and accordingly the composition of precursor molecules. Examples of deposition processes include, but are not limited to, chemical vapor deposition (CVD), atomic layer deposition (ALD), or other suitable deposition processes known in the art. For example, a silicon source can be used to deposit silicon-containing structures or thin films, for example silanes, monosilane, disilane, trisilane, DCS and TCS for deposition of poly-SiGe, silicon nitride metal silicides, and extrinsic or intrinsic silicon (polycrystalline, amorphous or epitaxial). Examples of deposition processes include, but are not limited to, CVD and ALD.
A thin film formed over the substrate by CVD or ALD, for example, is made of any material that is compatible with the specific deposition process. Examples of materials include, but are not limited to, those formed from low-k dielectric materials, such as low-k polymeric dielectrics or organic-containing silicon dioxide or carbon-doped oxide dielectric. For alternative integrated circuit device embodiments, the thin film layer may be formed from a high-k gate dielectric material such as aluminum oxide (Al2O3), tantalum pentoxide (Ta2O5), hafnium pentoxide (Hf2O5), etc. In another embodiment, the thin film may be formed from a high-k capacitor dielectric material such as Ta2O5, barium strontium titanate (BaSrTiO3 or BST), etc.
The invention may be further understood by the following non-limiting examples. All references cited herein are hereby incorporated by reference to the extent not inconsistent with the disclosure herewith. Although the description herein contains many specificities, these should not be construed as limiting the scope of the invention but as merely providing illustrations of some of the presently preferred embodiments of the invention. For example, the scope of the invention should be determined by the appended claims and their equivalents, rather than by the examples given.
In a first set of experiments, Argon gas 30 flows into the chamber 20 through the remote plasma cavity orifice 40 downstream of the remote plasma generator 35. Conduit 80, such as a glass tube, conveys plasma from the plasma generator 35 to microcavity 50. In this example, the plasma is generated by a microwave plasma generator. Once the flow is stabilized, plasma is ignited in the cavity and the activated argon species, specifically a metastable atom 45, reaches the substrate 10. This treatment is continued for 10 min.; treatment time may be varied as desired, thereby varying the active site density on the receiving surface 15 of the substrate 10. After the treatment, the argon flow is closed and the plasma in the microcavity 50 is extinguished. Then the valve 70 which controls the CVD precursor 60 flow is opened and the precursor 60 is delivered to the substrate surface. In this example, the precursoer is Hf[BH4]4 The precursor partial pressure in the reactor during growth is 10−5 Torr. The time of precursor flow is monitored and a series of films is deposited with the same treatment procedure for each film but with different growth times (30 sec., 45 sec., 2 min., 4 min.). After film deposition, the substrate 10 is removed from the chamber 20 and is analyzed by AFM, SEM, XPS, and other microanalytical techniques to provide qualitative and quantitative analysis of film quality.
In a second set of experiments, another series of films is deposited but no treatment is done, i.e. the substrate does not receive activated argon species 45. The films are grown for various times (30 sec., 1 min., 2 min., 7 min.) and analyzed as before.
In a third experiment, the treatment is maintained during film growth, i.e. the remote plasma treatment of metastables 45 is continued during delivery of the precursor 60, so as to observe the possible effect of low energy plasma species on the growth of the thin film. No change in the film growth rate is observed relative to films grown using the treatment but with no plasma exposure during film growth. This indicates that dominant effect of the low energy plasma species is to activate the substrate surface for better nucleation in the early stages of film growth.
AFM images (1 μm�1 μm) in
This experiment illustrates that treatment of silicon surface followed by the growth of HfB2 from Hf(BH4)4 provides a higher quality thin-film that is smoother and has more uniform deposition than processes that do not treat. This process is compatible for a wide variety of CVD or ALD precursor molecules and substrate combinations where a nucleation problem exists. The systems and processes provided herein are capable of accessing lowest thickness (e.g., <5 nm) for a fully coalesced metal film by CVD with low roughness values that are not readily achievable with relatively low temperature processing conditions and conventional thin layer deposition processes.
The processes provided herein rely on surface activation to create nucleation sites, without sputtering or etching the surface. Exposure of the surface to noble gas species (e.g., metastable noble gas atoms) generated by low energy plasma species is a very gentle yet efficient way of enhancing nucleation on any surface. This treatment is a powerful way to enhance the nucleation density and thus to achieve fast coalescence and the growth of ultra-thin and ultra-smooth films. The treatment process is easy to implement and does not require any temperature changes relative to the film growth temperature.
The requirement for ultra thin films in microelectronics and other applications in nanotechnology has made nucleation one of the primary focuses in thin film deposition.1 Dense nucleation and fast coalescence enables deposition of pinhole free ultra-thin smooth film. In CVD and ALD, two commonly used techniques for thin film deposition, nuclei are formed in selected sites on the substrate surface after which they grow and coalesce.2,3 With fewer of these nucleation sites, corresponding island sizes are larger and the time for fully-coalesced films increases. In such situations it is almost inevitable to get high roughness values with higher thicknesses before a fully coalesced film is formed. It is therefore imperative to have high nucleation density on the substrate surface, to grow fully coalesced ultra-thin films with low roughness values. Prior techniques of nucleation enhancement have been system (substrate, precursor) specific; relying on surface activation by chemically etching the surface to create active sites for nucleation or by altering surface termination to aid the adsorption of one or more of the precursors during ALD.4,5 Although effective, this approach can bring undesirable changes to the film substrate interface.
We present a novel technique to enhance nucleation, without damaging the substrate, in a CVD/ALD system which is fully compatible with current silicon technology. It relies on activating the substrate surface with noble gas species coming from microwave plasma and/or high energy electromagnetic radiation generated outside the deposition chamber. The interaction of these noble gas species and/or high energy electromagnetic radiation with the substrate creates dangling bonds on it. These dangling bonds serve as active sites for nucleation. We demonstrate this nucleation enhancement on silicon substrate for two systems: one a single precursor CVD of metallic HfB2 and another CVD of MgO using a magnesium precursor and water as a co-reactant.
The silicon substrate (100) is prepared by degreasing in an ultrasonic bath using standard organic solvents and rinsing in DI water. Prior to its introduction in the chamber, it is dipped in a HF solution and rinsed with DI water to achieve a hydrogen terminated silicon surface.6 The treatment and CVD is done in a UHV chamber pumped to a base pressure of 10−9 Torr. The precursor delivery and deposition chamber details are described elsewhere.7 The remote plasma is generated using an Evenson microwave cavity operated at 2.45 GHz which has been described by Fehsenfeld et al.8 Inside the cavity the electromagnetic fields generate an oversaturated plasma region which is characterized by a high electron density and electron temperatures not higher than 5 eV. Outside the cavity the electromagnetic fields sharply decrease and so does electron and ion densities.9 For this reason, Evenson cavities have been extensively used in the literature as atomic and radical sources.
The plasma treatment is optionally performed by exposing the silicon surface to downstream flow of argon coming from the microwave plasma. In this example, two specific plasma treatments of the substrate surface are investigated: treatment A where the remote plasma is on just before treatment (treatment); and treatment B where plasma is on during treatment and throughout the nucleation stage. The effectiveness of one of these treatments over the other depends on the CVD system (precursor substrate combination). In both the treatments A and B, the growth rate is not affected in the presence of argon species exposure during growth. This suggests that the surface activation takes place only on bare silicon substrate and the argon species does not affect the steady state film growth. The nucleation and growth of deposited films are monitored in situ using spectroscopic ellipsometry. Ex situ roughness analysis of the film is carried out by tapping mode AFM and film microstructure determined by Field Emission SEM.
We demonstrate the effectiveness of the treatment B on another CVD system, that of MgO using Mg(DMDBA)2 and water as the co-reactant. Ellipsometry shows that the film does not nucleate at all in absence of treatment on hydrogen terminated silicon surface at 275� C., whereas, the steady state growth rate is known to be 4 nm/min for the same experimental condition (
In some embodiments, the surface treatment process relies on the interaction between species generated from microwave argon plasma and the hydrogen terminated silicon surface. From the plasma point of view, there are four different species that are potentially relevant for the nucleation enhancement process: electrons, ions, metastables and UV photons, all of which are characterized by energies below 20 eV in the case of Ar-based remote plasma generation. Given the nature of the discharge and the absence of accelerating voltages, the ion and electron flows in the downstream region are very small. This is one of the reasons why these discharges have been used as atomic sources. Not only is there a fast decay in the electron density outside the cavity region, but also the high neutralization probability with the walls contribute to a fast depletion in the number of charged species in the absence of any DC accelerating potential. This is in agreement with the low current (50 nA) measured by grounded electric probe placed in the position of the substrate holder. Also, the floating potential measured using this probe is 0.42 V which corresponds to electron energy of 0.2 eV. This energy is at least an order of magnitude lower for known threshold of electron stimulated desorption (ESD).12 However, contrary to the case of charged particles, which recombine readily in the tube walls, the reflection coefficient of Ar metastable in pyrex is 0.28 according to the experimental measurements by Macko and Sadeghi.13 In our experimental conditions, we have determined that the mean free path for both metastables levels is greater than 10 m using the rate coefficients provided by Bultet et al.14 This means that an important flow of metastable atoms is expected in the substrate holder.
Regarding photon emission, in Ar plasmas there are four important contributions: two of them, the 4p-4s transitions are in the 700 nm region and 5p-4s transitions in the 400 nm region, have energies which are lower than the typical Si—H bond energy. Also, there are two sources in the VUV region, the Ar2*excimer emission, which takes place at 210 nm, and the 3s2p5 4s 3P3 and 3P1 resonant transitions to the Ar ground state, characterized by photon energies of 11.624 and 11.828 eV, respectively.15 The interaction of UV photons with hydrogen terminated silicon surface is reported in the literature. UV photons can desorb hydrogen from silicon surfaces by two mechanisms: photothermal for lower photon energies (˜4 eV threshold) and photochemical for higher photon energies (7.9 eV threshold).16 This supports identification of the active species responsible for surface activation as the argon metastables and UV radiation coming from the plasma.
The interaction of metastables with metal surfaces has also been studied thoroughly.17,18 Metastables can interact with a surface in two ways: one in which Resonance Ionization (RI) of these metastable takes place followed by its Auger neutralization by an electron emitted from the surface and another in which the metastables can undergo Auger de-excitation (AD) in which it loses an electron from higher energy state and gains one from the surface into a low energy state. This creates a hole on the valence band of the surface, thereby enhancing the probability of desorption of a species from the surface, provided the energy requirements for desorption are met. Mitsunori et al.19 first showed the desorption of H from hydrogen terminated alkali metal surface and later Yamauchi et al.20 demonstrated the desorption of hydrogen from hydrogen terminated Si (111) surface using pulsed DC He plasma. They used TOF measurements to prove that in their experimental conditions He metastables and not photons are responsible for hydrogen desorption from Si—H surface. However, the exact mechanism of hydrogen desorption by metastables from a silicon surface is not fully understood.
In our system, both UV photons and metastables generated from the plasma have sufficient energy to desorb hydrogen from the silicon surface, but low enough energy to avoid undesired interactions. Without being bound or limited to any ultimate underlying mechanism, Applicants believe the processes provided herein facilitates hydrogen desorption during surface treatment to create dangling bonds which remain frozen at low temperatures that function as active sites for nucleation. In some CVD systems, hydrogen coming off the substrate surface as a reaction byproduct may re-passivate the dangling bonds produced by the plasma treatment. In such systems, it is therefore advantageous to follow treatment B, where the plasma is kept on throughout nucleation, so as to continuously create new sites for precursor adsorption. Similar surface activation by hydrogen desorption from Si surface using an STM tip has been reported, where the desorbed site offered the possibility of selective deposition during CVD.21
The processes provided herein facilitate nucleation enhancement for other precursor substrate combinations during CVD or ALD, fully compatible with current silicon technology and with zero thermal budget.
All references throughout this application, for example patent documents including issued or granted patents or equivalents; patent application publications; and non-patent literature documents or other source material; are hereby incorporated by reference herein in their entireties, as though individually incorporated by reference, to the extent each reference is at least partially not inconsistent with the disclosure in this application (for example, a reference that is partially inconsistent is incorporated by reference except for the partially inconsistent portion of the reference).
The terms and expressions which have been employed herein are used as terms of description and not of limitation, and there is no intention in the use of such terms and expressions of excluding any equivalents of the features shown and described or portions thereof, but it is recognized that various modifications are possible within the scope of the invention claimed. Thus, it should be understood that although the present invention has been specifically disclosed by preferred embodiments, exemplary embodiments and optional features, modification and variation of the concepts herein disclosed may be resorted to by those skilled in the art, and that such modifications and variations are considered to be within the scope of this invention as defined by the appended claims. The specific embodiments provided herein are examples of useful embodiments of the present invention and it will be apparent to one skilled in the art that the present invention may be carried out using a large number of variations of the devices, device components, methods steps set forth in the present description. As will be obvious to one of skill in the art, methods and devices useful for the present methods can include a large number of optional composition and processing elements and steps.
Every formulation or combination of components described or exemplified herein can be used to practice the invention, unless otherwise stated.
Whenever a range is given in the specification, for example, a temperature range, a time range, or a composition or concentration range, all intermediate ranges and subranges, as well as all individual values included in the ranges given are intended to be included in the disclosure. It will be understood that any subranges or individual values in a range or subrange that are included in the description herein can be excluded from the claims herein.
All patents and publications mentioned in the specification are indicative of the levels of skill of those skilled in the art to which the invention pertains. References cited herein are incorporated by reference herein in their entirety to indicate the state of the art as of their publication or filing date and it is intended that this information can be employed herein, if needed, to exclude specific embodiments that are in the prior art. For example, when composition of matter are claimed, it should be understood that compounds known and available in the art prior to Applicant's invention, including compounds for which an enabling disclosure is provided in the references cited herein, are not intended to be included in the composition of matter claims herein.
As used herein, "comprising" is synonymous with "including," "containing," or "characterized by," and is inclusive or open-ended and does not exclude additional, unrecited elements or method steps. As used herein, "consisting of" excludes any element, step, or ingredient not specified in the claim element. As used herein, "consisting essentially of" does not exclude materials or steps that do not materially affect the basic and novel characteristics of the claim. In each instance herein any of the terms "comprising", "consisting essentially of" and "consisting of" may be replaced with either of the other two terms. The invention illustratively described herein suitably may be practiced in the absence of any element or elements, limitation or limitations which is not specifically disclosed herein.
One of ordinary skill in the art will appreciate that starting material, reagents, synthetic methods, purification methods, analytical methods and compositions other than those specifically exemplified can be employed in the practice of the invention without resort to undue experimentation. All art-known functional equivalents, of any such materials and methods are intended to be included in this invention. The terms and expressions which have been employed are used as terms of description and not of limitation, and there is no intention that in the use of such terms and expressions of excluding any equivalents of the features shown and described or portions thereof, but it is recognized that various modifications are possible within the scope of the invention claimed. Thus, it should be understood that although the present invention has been specifically disclosed by preferred embodiments and optional features, modification and variation of the concepts herein disclosed may be resorted to by those skilled in the art, and that such modifications and variations are considered to be within the scope of this invention as defined by the appended claims.
Patent Citations
Non-Patent Citations
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Tavis Smiley | Stanley Greene: Monday, 7/5/10 | PBS (#2036)
Stanley Greene describes his exhibit documenting Hurricane Katrina's effects on people. 09:23
Tavis Smiley | Stanley Greene - Highlight | PBS (#2036)
Photographer explains how his images of Hurricane Katrina impacted his body of work. 01:14
Rock Prophecies | Tyler Bryant and Band | PBS
Tyler Bryant and band stand on desks and play. 04:42
Rock Prophecies | Tyler Bryant rips up a U of M lecture | PBS
During a ROCK PROPHECIES lecture/ event at a University of Montana college class lecture, musician TYLER BRYANT jumps up on a desk and thrusts into an impromptu concert while stomping on a students... 03:48
Market to Market (April 2, 2010) (#3531)
Full Program: The Agriculture Department predicts some big numbers in its prospective plantings report. President Obama announces policy changes that could clear the way for oil drilling off US coasts. And a 4H... 27:47
4H Students Experience Rural Life Through a Camera Lens (#3531)
A 4-H program helps shutterbugs develop photography skills by focusing on rural America. 06:50
Bill Moyers | The Journal: Sara Lawrence-Lightfoot & Artist Chris Jordan | PBS (#1317)
Full Program: "Change, growth, and new learning" — there's a cultural shift in America, says Sara Lawrence-Lightfoot. Bill Moyers speaks with one of America's leading educators and author of The Third Chapter:... 49:19
Secret Life of Scientists: Rich Robinson | PBS
Rich Robinson works on a tiny scale with nanoparticles to solve an enormous problem—the world's energy crisis. What motivates him? 01:29
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Experimental Psychologist / Foot Photographer 06:38
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His Science: Nanoscientist. His Secret: Photographer. 07:46
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Photojournalist Iason Athanasiadis-Fowden discusses covering the recent protests in Iran and his subsequent arrest and imprisonment on suspicion of espionage. 13:04
THE NATIONAL PARKS: AMERICA'S BEST IDEA | Collecting Parks
Tuan Luong, a climber and photographer who was so captivated by the splendor of the national parks that he decided to continue his studies in California just to be near El Capitan and Yosemite... 03:08
Alternate "Rock Prophecies" Trailer | PBS
Imagine seeing bands like Led Zeppelin or the Rolling Stones long before they became famous. Legendary Rock photographer Robert Knight did just that, and has the photos to prove it. ROCK PROPHECIES... 02:49
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Capsule Reviews
September 1, 2011|
Art + Science Now, Signs of Life, Perceptions of Promise, Green Light
September 1, 2011|
Art + Science Now, Signs of Life, Perceptions of Promise, Green Light
September 1, 2011|
In the memory circuits of the aging brain and the signaling pathways of pain, science is trading mystery for mastery.
September 1, 2011|
Purinergic signaling, not mystical energy, may explain how acupuncture works.
September 1, 2011|
Exposing the life and work of a visionary and troubled scientist opens a window onto the evolution of altruism.
August 31, 2011|
A blood protein involved in allergy contributes to the decline in brain function and memory in aging mice.
August 31, 2011|
There are more positive words than negative ones in the written English language.
August 30, 2011|
A year and a half after soldiers have returned from war, impairments in the regulatory circuitry of the amygdala remain.
August 29, 2011|
In matriarchal societies where women receive equal education, there is no difference in spatial abilities between men and women.
August 26, 2011|
Civil unrest is twice as likely during warm El Niño years.
August 25, 2011|
Earlier this month (August 13-14) thousands of children and bug-loving adults descended on the Academy of Natural Sciences in Philadelphia, where all manner of insect—dead, alive, and deep fried—were on display to be looked at, touched and, yes...eaten.


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Artists of the Year
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We've received thousands of superb entries to this year's competition and finally managed to whittle them down to a shortlist of 50 top artworks – but this is where you come in!
We want you to vote for your favourite artwork and the entry with the most vote casts with then be presented with the readers' choice award at our Artists of the Year 2014 exhibition at Mall Galleries in January.
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Keeping your cellphone in your pants pocket may help you quickly answer a call, but new research suggests this habit may have some damaging health effects for men – notably wannabe fathers.
A new study, published in the journal Environmental International, suggests that men who keep their cellphones in their pants may inadvertently damage their sperm, decreasing their fertility.
To get these findings, researchers from the University of Exeter conducted a systematic review of 10 studies, which included 1,492 men who had visited fertility clinics or research centers and had given samples of their sperm. Sperm quality was gauged based on three different measurements: motility (the ability to move properly to the egg), viability (the amount of alive sperm in a sample), and concentration (the amount sperm per unit of semen).
The researchers found that a control group of men had 50 to 80 percent of sperm with normal movement. However, this average dropped by 8 percent for men who were exposed to mobile phones.
According to previous research, it's possible that the radio-frequency electromagnetic radiation (RF-EMR) emitted by cellphones can have a harmful effect on male fertility.


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People who hoped the Arab Spring would lead to greater religious freedom across the Middle East have been sorely disappointed, and a new Pew study [6] confirms that the region has grown even more repressive for various religious groups.
"In 2011, when most of the political uprisings known as the Arab Spring occurred, the Middle East and North Africa experienced pronounced increases in social hostilities involving religion, while government restrictions on religion remained exceptionally high," according to the report by the Pew Research Center.
The study shows the number of countries in the Middle East or North Africa with sectarian or communal violence between religious groups doubled from five to 10 during 2011, a year that coincided with most of the political uprisings of Arab Spring.
Among those groups most adversely affected were Egypt's Coptic Christians, whose churches have been bombed and burned both before and after the February 2011 fall of former Egyptian President Hosni Mubarak.
Globally, the Pew survey of 198 countries found that the share of countries with high or very high restrictions on religion rose from 37 percent in mid-2010 to 40 percent by the end of 2011.
And because some of the most restrictive countries are very populous, more than 5.1 billion people (74 percent of the world's population) were living in 2011 in countries "with high government restrictions on religion or high social hostilities involving religion, the brunt of which often falls on religious minorities," the study's authors report.
The report also tracked the proportion of the world's nations where religious groups suffered persecution:
Photo courtesy Mariia Savoskula [8]/Shutterstock.com.
Lauren Markoe covered government and features as a daily newspaper reporter for 15 years before joining the Religion News Service staff as a national correspondent in 2011. Via RNS [9].
[1] http://sojo.net/blogs/gods-politics
[2] http://sojo.net/biography/lauren-markoe
[3] http://sojo.net/blogs/2013/06/21/study-religious-oppression-rises-despite-arab-spring#comment-covenant
[4] http://sojo.net/letter-to-web-editor?post=Study%3A%20Religious%20Oppression%20Rises%20Despite%20Arab%20Spring
[5] http://sojo.net/donate
[6] http://www.pewforum.org/Government/arab-spring-restrictions-on-religion-findings.aspx
[7] http://sojo.net/sites/default/files/mainimages/blog/shutterstock_113500867.jpg
[8] http://www.shutterstock.com/gallery-828859p1.html
[9] http://www.religionnews.com/


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Samsonite 39407 Laptop Tote - For Ladies, Fits 15.6" ScreensItem#: YYSP-SAM39407 | Model#: 39407
Currently Out Of Stock!
Samsonite 15.6" Laptop Tote for Ladies Product Details
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Mfg Part No: 39407
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Box Size: ( Length:17, Width:5, Depth:12)
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Dimensional Weight: 5pounds
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- Limited Warranty: A full text version of the limited warranty
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Another US ship to dock at Subic Friday
More News from Jerome Aning
More News from Philippine Daily Inquirer
MANILA, Philippines—Another ship will be visiting the Philippines Friday, anchoring at Subic Bay for maintenance and supplies replenishment, the United States Embassy announced Thursday.
The "routine" port call of the USS Emory S. Land, a submarine tender, "highlights the strong historic, community, and military connections between the United States and the Philippines," the embassy said in a statement.
The Emory S. Land is part of the US Pacific Fleet and is homeported at the US military base in Diego Garcia, the British overseas territory in the Indian Ocean.
The ship's visit will give its crew the opportunity for rest and relaxation, the embassy said.
Launched in 1977, the ship is named after Vice Admiral Emory Scott Land of the US Navy, who oversaw the design and construction of submarines and noncombatant ships during the two world wars.
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text:
Staff Correspondent
Code numbers given for different service stations
Fault detection devices have been installed at sub-stations
Customers told to avail the facility to pay their bills at post offices
MANGALORE: The Mangalore Electricity Supply Company Ltd., (MESCOM) has launched the Interactive Voice Response System (IVRS), a helpline to address complaints and grievances of customers. The cellphone users have to register their complaints by dialling 18004251917. Customers calling from landlines should dial 1917 instead. Both these numbers are toll-free. S. Sumanth, managing director of MESCOM, made the announcement at a press conference on Tuesday.
The company has allotted code numbers for service stations at different areas: Jeppu - 1, Maidan - 2, Mallikante - 3, Mannagudda - 4, Kavoor - 5, Panambbur - 6, Kulshekhar - 7, Ullal - 8, Surathkal - 9, and Moodabidri - 10. These numbers are required to be dialled by the customers after being advised to do so by a pre-recorded message on the complaint lines.
Fault detection
The company has installed "auto-closures" and "sectionalisers" at the seven sub divisions.
Of them, 10 devices have been installed in Mangalore division, 12 in Udupi, and two for the rest of the divisions, including Puttur, Shimoga, Kadur, Chickmangalur and Sagar divisions.
These devices are expected to quickly identify faults in 11-kV power lines. Hitherto, fault detection was being done manually which was time consuming. The MESCOM is setting up three new 33-kV sub-stations in the district to meet the growing needs of the people. Of them, two sub-stations will be set up in Vogga and Kukkipadi villages of Bantwal Taluk by this month end. The third sub-station will be set up in Nelliyadi village of Belthangady taluk by March.
Bill payment
Mr. Sumanth reminded the customers that electricity bills of any sub-division could now be paid at computerised Post Offices. Stating that many people were not aware of the facility, he called upon the public to avail the same. "There is no need to fill forms or slips while paying the bill at post offices.
However, payments are accepted by cash only till 4 p.m. on all working days," he said.
Collection of dues
Mr. Sumanth said that the company had recovered Rs. 37-crore worth outstanding payments from gram panchayats. "Another Rs. 50 crore remains to be collected. Efforts are on to recover it by end March. We have collected Rs. 1.12 crore as penalty for power theft from 884 cases till November," he said.
The company had beaten its own national record for loss of energy in power distribution. "The loss of power during transmission is 13.11 per cent this year against the 15.29 per cent during 2006-07," he said.


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Doña María de la Luz Padilla y Gómez de Cervantes
About 1760 Miguel Cabrera painted Doña María de la Luz, a Creole patron of well-known lineage, without the lengthy biographical inscription that often appeared in portraits of the period. His subject wears a fine silk brocade dress enhanced by jewelry and many chiqueadores, or glued false beauty spots made of black velvet.
John Singleton Copley, on the other hand, depicted his wealthy Boston sitter in a daring costume à la turque, which was all the rage in London and undoubtedly served to attest to Mrs. Gardiner's social status and modern taste. Her rather impassive gaze and exuberant wardrobe—traits she shares with her Spanish colonial counterpart—were at this moment hallmarks of prevailing taste in both empires.
Alrededor de 1760 Miguel Cabrera pintó a doña María de la Luz, mecenas criolla de conocido linaje, sin la larga inscripción biográfica que solía aparecer en los retratos de la época. La modelo lleva un fino vestido de brocado de seda, adornado con joyería y muchos chiqueadores (lunares falsos hechos de terciopelo negro).
Por otro lado, John Singleton Copley representa a su adinerada modelo bostoniana llevando un atrevido disfraz à la turque, al último grito de la moda en Londres, que indudablemente sirvió para dar fe del estatus social y gusto moderno de la Sra. Gardiner. Su mirada imperturbable y ropas extravagantes—rasgos que comparte con su contraparte colonial española—eran en esos tiempos sellos del gusto prevalente en ambos imperios.
This text refers to these objects: ' 65.60; 52.166.4
- Artist: Miguel Cabrera, Mexican, 1695-1768
- Medium: Oil on canvas
- Place Made: Mexico
- Dates: ca. 1760
- Dimensions: 43 x 33 in. (109.2 x 83.8 cm) frame: 57 x 41 x 8 in. (144.8 x 104.1 x 20.3 cm) (show scale)
- Inscriptions: Middle left: "D.n Maria d la Lus /Padilla y Cervantes/ Mich.l Cabrera Pinxt"
- Collections:American Art
- Museum Location: This item is on view in American Identities: A New Look, American Landscape/Colony to Nation, 5th Floor
- Exhibitions:
- Accession Number: 52.166.4
- Credit Line: Museum Collection Fund and Dick S. Ramsay Fund
- Rights Statement: No known copyright restrictions
- Caption: Miguel Cabrera (Mexican, 1695-1768). Doña María de la Luz Padilla y Gómez de Cervantes, ca. 1760. Oil on canvas, 43 x 33 in. (109.2 x 83.8 cm). Brooklyn Museum, Museum Collection Fund and Dick S. Ramsay Fund, 52.166.4
- Image:
- Catalogue Description: Dona Maria de la Luz Padilla y Cervantes (1732-1789). An oil painting by Miguel Cabrera which shows Dona Maria as a grown young lady. She is the same person as the preceding portrait as an adult. She is shown in a three-quarter view and length in a dress with heavy gold embroidery in a floral pattern against a white background. Her hair is powdered and she has beauty patches on her face. She wears elaborate jewels in her ears, at her neck, and a pectoral, also jewel rings and bracelets. She stands in front of a gold curtain and holds a fan in her right hand and flowers in her left hand. Condition: Good, it has been restored around the edges and on the dress b the Museum Laboratory.
- Record Completeness: Best (88%)


text:
Well-intentioned but underwhelming
When "Party Pilipinas" was deservedly axed some weeks ago, we hoped that GMA 7 would replace it with a more original and freshly conceptualized show, to give its prized Sunday noontime slot a big boost in terms of reinvigorated viewer interest and appeal.
So, we caught the replacement program's first telecast last Sunday, to see if "Sunday All Stars" would measure up to the challenge, and deliver the goods.
Alas, the new program came off as well-intentioned but underwhelming, because it chose to retain most of the old cast of "Party Pilipinas," including its four relatively "senior" stars.
What is "new" about the show is its "competition" format, with all of its many stars and starlets now divided into four groups, with each team putting up a more polished singing and dancing showcase, and the four top stars and the viewing public deciding who the best group and individual performer for the week are.
The competition format did challenge the performers to work harder than they did on the previous program, but it really wasn't all that original—because, isn't that what the old "That's Entertainment" show used to do, and "Eat Bulaga's" Saturday edition still does?
Competitive spirit
—Anyway, "Sunday All Stars'" heightened competitive spirit has produced better performances from some previously lazy stars and starlets, so it still comes off as a plus. But, will it be enough to keep viewers watching from week to week? We trust that the show's performing teams will keep coming up with dynamic and "different" concepts, so their new program continues to surprise viewers!
We similarly trust that the team members will cooperate fully in the channel's earnest effort to provide them with a regular venue to develop their skills.
Last Sunday, a team leader was heard to complain about many talents coming late for rehearsals, and another leader starkly reminding everyone, "When you're on time, you're late!"
It would also help if some performers would work harder to "heat up" their teams' numbers. Last Sunday, the standouts in this regard included Yassi Pressman, Jonalyn Viray, Jolina Magdangal, Christian Bautista, Andrea Torres, Aicelle Santos, Glaiza de Castro and Gian Magdangal. At the other end of the "stellar-shine" spectrum was the relatively dim wattage emanated by the less committed likes of Solenn Heussaff and Aljur Abrenica.
In terms of hosting, Janine Gutierrez was too hyper, and both she and Heart Evangelista should beef up their thin speaking voices, pronto.
As for the program's four stellar "evaluators," it would really be appreciated if their "critiques" were less generally nicey-nice. They should set high standards, so the performing teams realize how much more they need to do.
In particular, the gifted but now too laid-back Janno Gibbs needs to light a really hot fire under himself to again come up with the spirited and memorable performances we know he's still capable of.
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Taormina RECOMMENDATIONS See all
Beaches of Taormina
By Viator, October 2013
Tours & Tickets
Aeolian Islands Day Trip from Taormina: Stromboli and Panarea
Explore the volcanic islands of Panarea and Stromboli in the UNESCO-listed Aeolian Archipelago, on a day trip from Taormina. After traveling by motorboat to ... Read more
Taormina, Italy
Duration: 13 hours (approx.)
Aeolian Islands Day Trip from Taormina: Lipari and Vulcano
Discover Lipari and Vulcano, two must-visit islands in the stunning UNESCO-listed Aeolian Archipelago. The chain of tiny islands boasts dramatic volcanic ... Read more
Taormina, Italy
Duration: 11 hours (approx.)


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Comment on: Reports: FBI agent in Orlando fatally shoots suspect that may have Marathon bombing connection - The Source - Latest news and updates from Boston.com
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Clown hat parade going on I see...I bet it's made out of tin foil and has a pointy top... :)
Comment on: Maroney%20upset%20about%20fumbles%20last%20season
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Ahhh..yeah the fans are upset too, Larry!
Comment on: 'Rockies have the last blast'
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Posted 04/24/2010 08:26:04 EDT
In his first game, some veteran linebacker is going make a point of hitting the kid McKnight DIRECTLY in the throat, meaning to hurt him and screw with his head....this is a guy who probably only work more »
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Posted 04/17/2010 05:07:58 EDT
They should send this moron back to NY to kiss Palin's nasty rear end more »
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Posted 12/28/2009 12:44:40 EST
DiMasi is a swine of the highest order...I look at it this way,,,I don't care if he is innocent of this crime, I KNOW he's been guilty doing other illegal things (IE, ticket Scalping Bill with the hel more »
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Try for a little more "ID"...like Mothra eating another character...that would be soooo coollllll!!!Merry Twisted Christmas! more »
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Posted 08/30/2009 04:56:06 EDT
They ARE the Walpole Rebels: (To be sung to the tune "DIXIE") "Oh, I wish I lived in the land of rotten, Where pederast coaches are not forgotten, Look away, Look away, Look away, Walpole land In Walp more »
Posted 08/27/2009 04:59:35 EDT
Well....psycho-analyze and hate me all you want folks...I won't be here to respond...goota run...CYA! more »
Posted 08/27/2009 04:41:31 EDT
Always wonder why those who support NAMBLA and child molestation always assume that those oppossed to any type of child abuse always have some deep seated anger that is their reason for opposing them? more »
Posted 08/27/2009 04:36:07 EDT
and AM-@@....how many 15 year olds have you "HAD" after the age of 25?....hmmmm...wow, you must be a real man!!!...lol more »
Posted 08/27/2009 04:34:44 EDT
..your mommas, jpd...lmao@jpd more »
Posted 08/27/2009 04:26:24 EDT
That would be "shoulder" jpd and...I have a daughter....you must not! more »
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