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Methods of this invention relate to filling gaps on substrates with a solid dielectric material by forming a flowable film in the gap. The flowable film provides consistent, void-free gap fill. The film is then converted to a solid dielectric material. In this manner gaps on the substrate are filled with a solid dielectric material. According to various embodiments, the methods involve reacting a dielectric precursor with an oxidant to form the dielectric material. In certain embodiments, the dielectric precursor condenses and subsequently reacts with the oxidant to form dielectric material. In certain embodiments, vapor phase reactants react to form a condensed flowable film.
1. A method of depositing a solid dielectric material on a substrate having gaps, the method comprising:
(a) introducing an oxidant reactant selected from ozone, oxygen and water and a dielectric precursor reactant into a reaction chamber, such that the reactants are present in the chamber in vapor phase at the same time;
(b) forming a flowable film at least in the gaps;
(c) reacting the dielectric precursor and the oxidant to form a dielectric material at least in the gaps; and
(d) converting the flowable film to the solid dielectric material in the gaps, wherein said converting comprises removing hydrogen (—H) or hydroxyl (—OH) groups from the flowable film.
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17. A method of depositing a solid dielectric material on a substrate having gaps of dimension on the order of about 100 nanometers or less, the method comprising:
(a) simultaneously introducing a dielectric-forming precursor and a second reactive material into a reaction chamber;
(b) exposing the substrate to the precursor of the solid dielectric material, which is in the vapor phase in order to achieve selective condensation in narrow gaps where the precursor is liquefied due to the Kelvin effect; and
(c) reacting the precursor liquid regions with the second reactive material to form a dielectric material in the gaps.
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This application is a continuation-in-part of and claims priority from the following copending applications: U.S. patent application Ser. No. 10/810,066, filed Mar. 25, 2004, titled "SELECTIVE GAP-FILL PROCESS" (issued as U.S. Pat. No. 7,074,690) and U.S. patent application Ser. No. 11/323,812, filed Dec. 29, 2005, titled "CVD FLOWABLE GAP FILL," both of which are hereby incorporated by reference.
This invention relates to methods for dielectric gap-fill. More specifically, the methods involve provide bottom-up fill of dielectrics by forming a flowable film in the gaps on a substrate.
Many deposition processes have difficulty filling the small trenches and other gap features used in current semiconductor processing schemes. Individual trenches and other gap type features produced in any given technology node have principal dimensions that are significantly smaller than the critical dimensions that define the current technology. Thus, it is not unusual to find gaps on the order of 100 nm or less. In future years, these feature sizes will shrink to even smaller dimensions. Unless the processes are extremely conformal, the gaps pinch off at their necks. Compounding the problem is the fact that many of these gaps have relatively high aspect ratios, on the order of at least 6:1. Examples of situations where one can find these dimensions and geometries include damascene copper line processes, shallow trench isolation, and interlayer dielectric (ILD) applications.
Filling such trenches in a reliable manner, while avoiding voids in the fill material is particularly challenging at this scale. Current processes including Physical Vapor Deposition (PVD) and Plasma Enhanced Chemical Vapor Deposition (PECVD), including High Density Plasma Chemical Vapor Deposition (HDP CVD), each of which presents some issues for filling small dimension, high aspect ratio features. Conformal deposition techniques may be inappropriate for situations where the dimension of the neck is narrower than the rest of the feature. This is because the conformal nature of the deposition leads to "pinching off", where the reentrant features are not completely filled before the entrance to the feature is sealed off. In addition, conformal deposition often leads to weak spots or seams in structures with vertical walls.
What is therefore needed is an improved deposition technique for creating void free fill in very narrow dimension features.
Methods of this invention relate to filling gaps on substrates with a solid dielectric material by forming a flowable film in the gap. The flowable film provides consistent, void-free gap fill. The film is then converted to a solid dielectric material. In this manner gaps on the substrate are filled with the solid dielectric material. According to various embodiments, the methods involve reacting a dielectric precursor with an oxidant to form the dielectric material. In certain embodiments, the dielectric precursor condenses and subsequently reacts with the oxidant to form dielectric material. In other embodiments, vapor phase reactants react to form a condensed flowable film.
One aspect of the invention relates to a method of depositing a solid dielectric material on a substrate having gaps, the method involving the steps of (a) introducing a non-peroxide oxidant reactant and a dielectric precursor reactant into a reaction chamber, such that the reactants are present in the chamber in vapor phase at the same time; (b) forming a flowable film at least in the gaps; and (c) reacting the silicon-containing precursor and the oxidant to form a dielectric material at least in the gaps. In certain embodiments the method further involves (d) converting the flowable film to the solid dielectric material in the gaps. In certain embodiments, the converting the film in (d) occurs in the presence of the oxidant introduced in (a). In certain embodiments (a) through (d) are repeated at least once to build up a film of a desired thickness.
In certain embodiments, the reactants react to form a condensed flowable film on the substrate. This film flows into the gap to fill the gap with the dielectric material. The film is then converted to a solid dielectric material by one or more of various techniques including a thermal anneal, ultraviolet (UV) exposure, microwave exposure, or exposure to an oxidizing plasma. According to certain embodiments, the film is converted to the solid material by mechanisms including (but not limited to) cross-linking the precursor to produce the solid material and/or removal of hydrogen (—H), hydroxyl (—OH) or water (H2O) groups. In a particular embodiment, an inductively-coupled plasma is used to convert the film.
According to various embodiments, the dielectric material is a silicon oxide, e.g., a doped silicon oxide containing boron and/or phosphorus. The precursor of the dielectric material may include one of more of the following compounds triethoxysilane (TES), tetraethylorthosilane (TEOS), tetramethoxysilane (TMOS), methyl triethoxysilane (MTEOS), methyltrimethoxysilane (MTMOS), dimethyldimethoxysilane (DMDMOS), trimethylmethoxysilane (TMMOS), dimethyldiethoxysilane (DMDEOS), bis-triethoxysilylethane (BTEOSE) or bis-triethoxysilylmethane (BTEOSM), tetramethylcyclotetrasiloxane (TMCTS), octamethylcyclotetrasiloxane (OMCTS), and tetravinyltetramethylcyclotetrasiloxane (TVTMCTS). In certain embodiments, the dielectric precursor is mixed in a carrier solvent, e.g., an alcohol.
According to various embodiments, the oxidant may be any suitable oxidant including water/steam, oxygen, ozone or peroxide. In particular embodiments, the oxidant in non-peroxide oxidant, e.g, water/steam, oxygen or ozone.
In certain embodiments, the forming the flowable film involves selectively condensing the dielectric precursor in the gaps. The precursor may be selectively condensed due to the Kelvin effect. The oxidant then reacts with the condensed precursor. In certain embodiments, the oxidant reactant is in the vapor phase when reacted. In certain embodiments, reacting the liquid regions of the precursor with the oxidant converts the film to a solid dielectric material.
Another aspect of the invention relates to a method of depositing a solid dielectric material on a substrate having gaps of dimension on the order of about 100 nanometers or less. The method involves the operations of (a) simultaneously introducing a silica-forming precursor and a second reactive material into a reaction chamber; (b) exposing the substrate to the precursor of the solid dielectric material, which is in the vapor phase in order to achieve selective condensation in narrow gaps where the precursor is liquefied due to the Kelvin effect; and (c) reacting the precursor liquid regions with the second reactive material to form a dielectric material in the gaps. The second reactive material may be an oxidant, e.g., water or steam.
These and other features and advantages of the invention will be described in more detail below with reference to the associated drawings.
The present invention relates to deposition processes that provide complete gap of fill high aspect ratio (typically at least 3:1), narrow width gaps. Most deposition methods either deposit more material on the upper region than on the lower region of a sidewall or form cusps (also called top-hats) at the entry of the gap. To remove sidewall and top-hat deposits and keep the gap open for further deposition, conventional HDP CVD processes typically use a multi-cycle deposition process—etch process. Each cycle includes a deposition step followed by an etch step Typically, fluorine species are used in the etch step. These fluorine etch steps are costly and time-consuming, in some cases requiring multiple reactors.
The present invention provides gap-fill methods that result in good, seamless and void-free gap fill. The methods involve depositing a soft jelly-like liquid or flowable film in the gap and then converting the flowable film into a solid dielectric film. The methods of the present invention reduce or eliminate the need for etch steps. In certain embodiments, a single cycle may be performed to fill a gap. In other embodiments, a multi-cycle process may be used to fill a gap.
Certain embodiments of the invention involve reacting a dielectric (e.g., a silicon-containing) precursor with an oxidant. The reactants are typically in the vapor phase and react to form a condensed flowable film.
After the substrate is provided to the reaction chamber, a process gas is introduced at operation 203. The process gas includes a silicon-containing compound and an oxidant. The gas may also include one or more dopant precursors. Sometimes, though not necessarily, an inert carrier gas is present. In certain embodiments, the gases are introduced using a liquid injection system. Typically the silicon-containing compound and the oxidant are introduced via separate inlets. In certain embodiments the oxidant is doped with a compound that contributes to reducing the reaction rate at the wafer surface. Examples of dopant compounds that reduce the reaction rate include alcohols, e.g., ethanol and isopropyl alcohol. Reducing the reaction rate at the wafer surface may be desirable to facilitate continuous film propagation and growth. Also, in certain embodiments, the reactants may be provided in manner that increases residence time over the wafer surface. For example, in some embodiments, an inert gas (e.g., He, Ar or N2) ballast is provided to increase reactant utilization. The ballast is provided below a baffle plate assembly. This constricts the flow of reactants thereby increasing their resident time over the wafer substrate. Dopant compounds such as boron or phosphorous-containing compounds may also be used to deposit doped oxide dielectric films.
The substrate is then exposed to the process gas at operation 205. Conditions in the reactor are such that the silicon-containing compound and the oxidant react and condense. As shown in operation 207, a flowable film is thereby deposited on the substrate surface. The substrate is exposed to the process gas for a period sufficient to deposit a flowable film to fill the gap. The deposition process typically forms soft jelly-like film with good flow characteristics, providing consistent fill. The deposited film may also be described herein for the purposes of discussion as a gel having liquid flow characteristics, a liquid film or a flowable film.
Process conditions in the reactor are such that the reaction product is a condensed material that is deposited on the surface. In many embodiments, this involves bringing the substrate into the chamber under "dark", i.e., non-plasma conditions. The substrate is not exposed to a plasma during the deposition phase (steps 205 and 207) of the process. Although not indicated on the flow sheet, gaseous byproducts may be continuously pumped from the reaction chamber.
After the flowable film has been deposited in the gap, the as-deposited flowable film is converted to a silicon oxide dielectric film in operation 209. In some embodiments, the film is converted by exposure to a plasma containing, for example, one or more of oxygen, helium, argon and water.
The process gas contains a silicon-containing compound and an oxidant. Suitable silicon-containing compounds include organo-silanes and organo-siloxanes. In certain embodiments, the silicon-containing compound is a commonly available liquid phase silicon source. In some embodiments, a silicon-containing compound having one or more mono, di, or tri-ethoxy, methoxy or butoxy functional groups is used. Examples include, but are not limited to, TOMCAT, OMCAT, TEOS, tri-ethoxy silane (TES), TMS, MTEOS, TMOS, MTMOS, DMDMOS Diethoxy silane(DES), triphenylethoxysilane, 1-(triethoxysilyl)-2-(diethoxymethylsilyl)ethane, tri-t-butoxylsilanol and tetramethoxy silane. Examples of suitable oxidants include ozone, oxygen, hydrogen peroxide and water.
In some embodiments, the silicon-containing compound and the oxidant are delivered to the reaction chamber via liquid injection system that vaporizes the liquid for introduction to the chamber. The reactants are typically delivered separately to the chamber. Typical flow rates of the liquid introduced into a liquid injection system range from 0.1-5.0 mL/min per reactant. Of course, one of skill in the art will understand that optimal flow rates depend on the particular reactants, desired deposition rate, reaction rate and other process conditions.
Acceptable silicon-containing compound/oxidant flow ratios are very variable, as there is typically only a single reaction. Examples of suitable ratios include 3:1-1:100.
The flowable film deposited on the substrate typically contains some combination of Si—O, Si—H and Si—OH bonds. As discussed above, in many embodiments, the reaction of the silicon-containing compound and the oxidant takes place in non-plasma conditions. The absence of RF power (or other plasma source) prevents the incorporation of organic groups in the film. For example, in reaction between TES and steam, the chemical reaction causes formation of a flowable film containing Si—OH, Si—H and Si—O bonds, while the ethoxy group is removed as a gaseous ethanol byproduct. As discussed above with respect to
As indicated above, in certain embodiments a chemical reagent that acts as an inhibitor to slow down the reaction between the silicon and oxidant precursors is used. Examples of such reagents include alcohols such as ethanol, isopropyl alcohol, etc. Ethanol is a by-product of the original chemical reaction as shown in the equation below between the silicon-containing precursor H—Si—(O—C2H5)3 and the oxidant H2O:
While not being bound by any particular theory, it is believed that the providing ethanol along with the oxidant precursor causes the reaction to be slowed down due to only two of the ethoxy groups on the silicon-containing precursor being converted. It is believed that the remaining ethoxy groups serves to network the film by acting as a link. Depicted below is one embodiment of this method using a 25-90% molar solution of ethanol:
Film composition depends in part on the oxidant chosen, with a weaker oxidant (e.g., water) resulting in more Si—H bonds than a stronger oxidant (e.g., ozone). Using ozone will result in conversion of most of the Si—H bonds to Si—OH bonds. An exemplary reaction according to one embodiment of the invention between an organo-silane precursor (R4-x—SiHx) and peroxide (H2O2) produces a silanol gel (R—Si(OH)x as well as other byproducts that may be pumped out.
Reactions conditions are such that the silicon-containing compound and oxidant, undergo a condensation reaction, condensing on the substrate surface to form a flowable film.
As discussed above, the reaction typically takes place in dark or non-plasma conditions. Chamber pressure may be between about 1-100 Torr, in certain embodiments, it is between 5 and 20 Torr, or 10 and 20 Torr. In a particular embodiment, chamber pressure is about 10 Torr.
Substrate temperature is typically between about −20 and 100 C. In certain embodiments, temperature is between about 0 and 35 C. Pressure and temperature may be varied to adjust deposition time; high pressure and low temperature are generally favorable for quick deposition. High temperature and low pressure will result in slower deposition time. Thus, increasing temperature may require increased pressure. In one embodiment, the temperature is about 5 C and the pressure about 10 Torr.
Exposure time depends on reaction conditions as well as the desired film thickness. Deposition rates are typically from about 100 angstroms/min to 1 micrometer/min.
Showerhead (or other gas inlet) to pedestal distance should also be small to facilitate deposition. Showerhead-pedestal distance is typically ranges from about 300 mil -5 inches. In some embodiments, it ranges from about 300 mil-1 inch.
A baffle plate assembly is utilized in certain embodiments to constrict reactant flow, thereby increasing the residence time of the silicon and oxidant precursors above the wafer substrate. The baffle plate assembly is mechanically attached to the chamber body and tends to be at the same temperature of the chamber walls (i.e >30C) to prevent deposition from occurring on the baffle plates. The change in conductance is achieved by providing an inert gas ballast below the baffle plates. Examples of inert gases that may be used include He, Ar and N2. Typical flow rates for the ballast vary from 100 sccm to 5 slm for the inert gases. In one embodiment a flow of 2 slm of He is used to create a ballast. A schematic of a deposition using baffle is depicted in
According to various embodiments, the film may be converted to a solid oxide film by exposure to a plasma. This results in a top-down conversion of the flowable film to a solid film. Oxygen, helium, argon and steam plasmas are examples of plasmas that may be used. The plasma may also contain one or more of these compounds. Nitrogen-containing plasmas should be avoided if the incorporation of nitrogen in the resulting dielectric film is undesirable. Temperatures during plasma exposure are typically about 200 C or higher.
In certain embodiments, an oxygen or oxidizing plasma is used to facilitate conversion of the Si—H bonds into Si—O bonds. An oxygen-containing plasma may be particularly useful for flowable films that have a high number of Si—H bonds, e.g., for films formed by the reaction of TEOS and steam.
Pressure is typically low, e.g., less than about 6 Torr. In certain embodiments, ultra-low pressures, on the order of about 0-10 mTorr are used during the conversion step. Using low pressure allows top-down conversion of the flowable film without leaving voids in the film. Without being bound by a particular theory, it is believed that low pressure causes sites left vacant by the removal of —H and —OH groups to be filled only by available oxygen radicals in the plasma.
Also in certain embodiments, inductively coupled (high density) plasmas are used to facilitate conversion. Si—OH sites may be converted to Si—O sites by thermal excitation. Use of an inductively coupled plasma provides a thermal environment that facilitates conversion of the Si—OH sites to Si—O sites as well as the oxygen ions and radicals that are able to react with the Si—H sites to convert them to Si—OH sites (which may then converted to Si—O sites by elevated temperature or other excitation).
The plasma source may be any known plasma source, including RF and microwave sources. In a RF plasma, plasma power is typically at least about 3000 W. Also the plasma-assisted conversion is preferably performed with a high frequency substrate bias.
In some embodiments, a thermal anneal may be used instead of or in addition to a plasma to convert the film into a solid oxide. Thermal annealing may be performed in any suitable ambient, such as a water, oxygen or nitrogen ambient. Temperatures are typically at least about 250 C, i.e. high enough to break the Si—OH bond. For example, thermally annealing a silanol gel R—Si(OH)x results in a silicon dioxide SiO2 film and water vapor. In some embodiments, microwave or UV curing may also be used.
Also in some embodiments, an oxidizing environment to convert Si—H sites to Si—OH sites may be obtained by utilizing thermal, UV, microwave or plasma curing in the presence of one or more oxidants such as oxygen, ozone, steam, etc. In certain embodiments, providing an oxidizing environment in operation 209 may involve using the same oxidant flow as in operation 203.
An example of a process according to another embodiment is shown in
After the silicon-containing layer is deposited, a process gas containing an oxidant is introduced to the reaction chamber in operation 307. In specific example, the oxidant is H2O (steam). The process gas may be introduced with or without RF power. Substrate temperature is typically the same as for operation 305. The water or other oxidant oxidizes the solid film and converts it to a flowable film such as that described above with respect to operation 207 of
In other embodiments of the invention, a dielectric precursor is selectively condensed in a gap. According to various embodiments, a thermodynamic effect due to which liquid remains selectively condensed in very narrow features is exploited. Under the certain physical conditions the precursor liquid is either selectively deposited only in the narrow features or the "bulk" precursor liquid is removed by evaporation while the liquid in the narrow features remains condensed. There, it is physically and/or chemically transformed to produce a solid deposition material (e.g., dielectric). By selectively depositing material in the narrow confined spaces of an integrated circuit, the process promotes "bottom up" filling. This results in the elimination of voids in the gap filling deposited material. The process has an additional advantage deriving from selective deposition in trenches and other gaps. As a result, excess material is not formed on top of the field regions and non-gap features of the partially fabricated integrated circuit. By reducing the quantity of such material, the invention reduces the need for expensive and time-consuming material removal process such as chemical mechanical polishing (CMP).
In a typical embodiment, the liquid phase deposition precursor is initially provided in a vapor phase at a partial pressure below its saturation pressure. Then, its partial pressure is gradually increased until it approaches the saturation pressure, at which point the material begins to condense as a liquid—first in the narrow trenches and other small features of the substrate. At the saturation pressure the liquid will begin to condense in the field. In one approach, the pressurization step is stopped just below the saturation pressure after the liquid has condensed in the features but before it condenses in the field. In a second approach, the partial pressure is increased to a point somewhere above the saturation pressure of the precursor. This relatively high partial pressure is maintained until at least all of the narrow gaps are completely filled with the liquid condensate. Typically, additional condensate (referred to herein as "bulk liquid") forms over the remainder of the substrate surface as well. To remove this bulk liquid while retaining the entrained liquid in the narrow features, the partial pressure of the precursor is now reduced to a point below its saturation pressure. At this pressure, the bulk liquid evaporates, while the liquid remains entrenched in the narrow features. This preference for liquid to remain condensed in the small spaces at pressures below the saturation pressure is due to the "Kelvin effect."
The invention is not limited to vapor phase introduction of the liquid into the narrow features. In other embodiments, the liquid may be introduced by immersion, spray on and/or spin on techniques, for example. In each of these instances, the liquid must be capable of penetrating into the narrow features where gap fill is desired.
At scales <100 nm, the Kelvin effect is a significant contributor in determining phase equilibria in trenches, pores and high aspect ratio structures. If a liquid is in a confined space in contact with a surface which it wets, the liquid interface will have a curvature and a pressure differential will exist across the interface such that the pressure in the liquid is lower than the pressure in the vapor space above the interface. This will prevent the liquid from evaporating even though the ambient pressure is significantly lower than the saturation pressure. This implies that at conditions near saturation there would be selective condensation at the bottom of high aspect ratio structures due to the increased curvature of the film. This invention takes advantage of the propensity for liquids to condense preferentially and to remain condensed in small features. This propensity is employed to selectively fill narrow features with liquid. The resulting liquid, localized in small feature gaps is converted to the desired deposition material, typically a solid dielectric or metal. The invention makes use of the Kelvin effect in several different process sequences to achieve gap-fill in high aspect ratio features. The relevant thermodynamics of this process will be described in more detail below.
For context, one general process used to fill narrow-dimension gaps is illustrated in
In an operation 402, the substrate is exposed to a vapor phase precursor. Initially, the precursor may be provided at a partial pressure well below its saturation pressure. In this case, the precursor's partial pressure is then increased to about its saturation pressure or higher. This is not required, however, as the precursor may immediately have a partial pressure at or near its saturation pressure. Regardless of how the desired partial pressure (about saturation pressure or higher) is reached, it is maintained there until the precursor condenses in the narrow gaps. See operation 403. Typically, additional condensate (referred to herein as "bulk liquid") forms on the substrate surface and larger dimension gaps as well. To remove this bulk liquid while retaining the entrained liquid in the narrow features, operation 404 reduces the precursor's partial pressure to a level below its saturation pressure but above its "hysteresis pressure." Hysteresis pressure is the minimum partial pressure at which liquid remains in gaps of a defined size (under equilibrium conditions). The hysteresis pressure is below the saturation pressure. Note that if the pressure is driven too low (below the hysteresis pressure), even the liquid in the narrow features will evaporate. The concept of a hysteresis pressure will be explained further below. Thus, in an operation 405, the precursor's partial pressure is maintained at the reduced level until the liquid precursor evaporates from the regions outside the narrow-dimension gaps. While the partial pressure need not remain fixed during operation 405, it should reside within a window between the lower limit (the hysteresis pressure) and the saturation pressure. Alternatively, the partial pressure of the liquid precursor may also be brought below the saturation pressure by increasing the saturation pressure by heating the substrate or the chamber.
With the liquid precursor now selectively confined to narrow dimension gaps, it may be appropriate to take advantage of this localization to selectively form structures in the gaps. Thus, in an operation 406, the liquid regions of the precursor are converted into a solid-phase deposition material. This conversion may be achieved physically for example simply by solidification or chemically by reacting the precursor liquid regions with another material to produce the solid material or by decomposing or polymerizing the precursor using, for example, thermal or ultraviolet means. Finally, in an optional operation 407, additional solid-phase material is deposited in regions outside of the narrow-dimension gaps, including the larger dimension gaps that were not filled by the above process. This additional deposition may be accomplished using a conventional process such as CVD, physical vapor deposition (PVD), plasma assisted chemical vapor deposition (PECVD), high density plasma (HDP), spin on techniques, atomic layer deposition (ALD), pulsed nucleation layer (PNL) deposition, pulsed deposition layer (PDL), plating techniques (including electroplating and electroless plating), etc. Alternatively, it may be accomplished by making use of the Kelvin effect as described above, but with different precursors or under different partial pressures or with a different process sequence, etc. as appropriate for larger gap structures.
A second general process used to fill narrow-dimension gaps is illustrated in
A third general process is illustrated in
To illustrate the selective condensation due to the Kelvin effect, one can visualize what happens if a wafer with gap features less than 100 nm is brought in contact with a pure fluid (in vapor phase) at a temperature below its critical point and the fluid is pressurized to is saturation pressure and then depressurized as shown in
In one method of practice of this invention where single or multiple pressurization-depressurization cycles are employed, it is important to use a final partial pressure within a window between a lower limit (referred to herein as the hysteresis pressure, Physt) and the saturation pressure. By operating below the saturation pressure, most if not all of the bulk liquid should evaporate. By operating above the hysteresis pressure, at least some liquid will remain entrained in the narrow dimension features. The above explanation suggests an embodiment of this invention: initially the substrate is provided with bulk liquid and liquid in narrow dimension features, and then the pressure is decreased to a point between the hysteresis pressure and the saturation pressure and held there until the bulk liquid is removed and some liquid remains in the narrow dimension features. The initial wetting of the substrate may be accomplished in various ways including immersion, spraying, spin on techniques, etc. Of course, it may also be accomplished by exposure to vapor phase fluid at a partial pressure well above the fluid's saturation pressure. It can remain in this state until at least the narrow dimension features are filled with liquid. Typically, some amount of bulk liquid will also be formed.
The size of the hysteresis loop depends on the magnitude of the Kelvin effect and therefore on the feature size and shape as well as the surface tension of the liquid and can be calculated as the change in free energy due to evaporation of a differential volume (ΔV) of liquid in the confined space which equals the change in surface area (ΔA) times the surface tension as:
For a trench on a wafer (assumed to be a rectangular one-dimensional trench with width d), equation 1 reduces to:
Similar equations can be derived for different feature shapes. For fluids at relatively low partial pressures, fugacity can be approximated by pressure. The main variables in applications of this invention include "d," the trench width and f, the fugacity associated with the hysteresis pressure, the maximum pressure at which some fluid remains entrained in trenches of width d during depressurization.
This phenomenon is exploited in this invention to allow for gap-fill in small features and trenches, which are essentially, confined spaces. As should be obvious by now, for a feature size of 45 nm, the fluid may exist as a liquid at pressures well below the saturation pressure.
As the feature length scales shrink, this selective condensation effect becomes stronger, and provides a wider process window. In other words, at smaller dimensions, d, there is a wider range of operational partial pressures for which liquid will remain selectively entrained in narrow dimension features. The horizontal axis, which corresponds to dimension d, is the gap width associated with the technology node for IC fabrication. At the 180 nanometer gap width, the percent hysteresis is only relatively small. Dropping to the 130 nanometer node and then the 70 nanometer node and beyond gives wider and wider process ranges.
In terms of features on a substrate surface, this process is generally applicable to any substrate having gaps that fall within the "mesoporous" domain. It generally includes gaps having a dimension of about 100 nm or less. The invention also finds particular usefulness in the context of gaps having relatively high aspect ratios (e.g., at least about 6:1, and sometimes 10:1 or above) and in the context of features having a neck dimension narrower than the remainder of the feature. Although, as indicated above, the invention may be employed with features of essentially any shape, including features with straight and/or sloped sidewalls, features with faceted openings, reentrant features, etc.
It is notable that many substrates have a wide range of gaps sizes and shapes to be filled. The present invention is useful to fill the narrowest of these. In the larger features, the Kelvin effect is much less significant, and the liquid phase precursor will evaporate when the partial pressure of the precursor is reduced slightly below the saturation pressure (i.e., the window defined by percent hysteresis is too small to be useful). Thus, the larger gaps can be filled with a second process such as conventional CVD, plasma enhanced chemical vapor deposition (PECVD), including high density plasma chemical vapor deposition (HDP CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), subatmospheric chemical vapor deposition (SACVD), electroplating, electroless plating, etc.
As noted above, various precursors may be used depending on the desired deposition material. In general, the precursor should have a saturation pressure that is reasonable for the range of temperatures and pressures available for the process under consideration. As indicated by equation 2, its liquid phase density, surface tension, and contact angle should be appropriate for providing a relatively large window of operation (Psat−Physt).
If a silicon oxide dielectric material is needed, precursors such as silanes and siloxanes may be appropriate. Examples of suitable silica-forming compounds include TES, TEOS, tetramethoxysilane (TMOS), an organic alkoxysilane such as methyl triethoxysilane (MTEOS), methyltrimethoxysilane (MTMOS), dimethyldimethoxysilane (DMDMOS), trimethylmethoxysilane (TMMOS), dimethyldiethoxysilane (DMDEOS), a bridged siloxane such as bis-triethoxysilylethane (BTEOSE) or bis-triethoxysilylmethane (BTEOSM), a cyclic siloxane such as tetramethylcyclotetrasiloxane (TMCTS), octamethylcyclotetrasiloxane (OMCTS), tetravinyltetramethylcyclotetrasiloxane (TVTMCTS) and mixtures of these precursors. Another class of dielectric precursors is the polysilazanes including perhydropolysilazanes (SiH2NH2)n, where n is an integer. These precursors have been applied as gapfill precursors using a spin on technique as discussed in U.S. Pat. No. 6,479,405, which is incorporated herein by reference for all purposes. In the current invention, similar polymeric precursors of appropriate molecular weight can be applied for gapfill by condensing from the vapor phase or by first applying to the substrate in the liquid phase followed by evaporation of the bulk liquid by the depressurization technique described previously.
In a typical scenario, the precursor liquid may be reacted with another material to produce the desired solid material. For example, an acid or base catalyzed TEOS condensation process can be achieved selectively in small features by using a multi-step process in which the first reactant TEOS is first condensed inside the features by pressurizing TEOS vapor to pressures greater than Psat. The chamber is then depressurized to a pressure Psat-ΔP that is within the hysteresis loop for the largest target feature size. The ambient fluid is a vapor while the features are filled with liquid TEOS. Then the second reactant (water/steam, ozone or peroxide) and catalyst (acid, e.g. HCl or base e.g. NH3) is added in such a manner that it preferentially partitions into the liquid phase where the reaction occurs to form a silicon dioxide.
The same reaction can be carried out in a single step process, where both reactants are introduced into the chamber simultaneously and the pressure is slowly increased to a pressure just below the saturation pressure such that condensation and subsequent reaction occurs only in the target features. The precursor(s) may also be mixed in a carrier solvent. Multiple pressure or temperature cycles can also be used to enhance mass transfer of reactants or by-products.
Alternately, the precursor liquid may be converted into a solid material via decomposition of the precursor in the liquid regions. For example, thermal decomposition or ultraviolet processes may be used.
With the choice of suitable chemistry and processing conditions, the film can be deposited in an entirely bottom-up manner, with the highest growth rate in the smallest structures.
In certain embodiments, the precursor(s) may be the vapor or liquid form of the final solid gapfill material. The gap-fill may be accomplished at an elevated temperature such that the material filling the features is a liquid, which subsequently solidifies as the substrate is cooled.
In any gap fill application where a doped material is desired, the dopant may be introduced by various procedures. For example, if a dopant precursor has appropriate phase equilibria properties, it may be introduced simultaneously as a vapor mixture. The dopant may also be introduced sequentially.
The methods of the present invention may be performed on a wide-range of reaction chambers. The methods may be implemented on any chamber equipped for deposition of dielectric film, including HDP-CVD reactors, PECVD reactors, any chamber equipped for CVD reactions, and chambers used for PDL (pulsed deposition layers).
The methods of the present invention can be implemented in many different types of apparatus. Generally, the apparatus will include one or more chambers or "reactors" (sometimes including multiple stations) that house one or more wafers and are suitable for wafer processing. A single chamber may be employed for all operations of the invention or separate chambers may be used. Each chamber may house one or more wafers for processing. The one or more chambers maintain the wafer in a defined position or positions (with or without motion within that position, e.g. rotation, vibration, or other agitation). The various stations may be wholly or partially isolated by virtue of gas curtains, walls, etc. In such cases, the substrate may be indexed between different stations during a multistage process.
In certain embodiments, the present invention may be implemented in a HDP CVD reactor. An example of a suitable reactor is the Speed™ reactor, available from Novellus Systems of San Jose, Calif. In certain embodiments, the present invention may be implemented in a PECVD reactor. Examples of suitable reactors are the Sequel™ reactor and the Vector™ reactor, both available from Novellus Systems of San Jose, Calif. In certain embodiments, the present invention may be implemented in a CVD chamber equipped for metal and/or dielectric deposition. An example of a suitable reactor is the Altus™ reactor available from Novellus Systems of San Jose, Calif. In certain embodiments, the present invention may be implemented in a chamber equipped for atomic layer deposition (ALD), pulsed deposition layer (PDL), or pulsed nucleation layer (PNL) reactions. An example of such a reactor is the Altus™ with PNL reactor available from Novellus Systems of San Jose, Calif.
As indicated above, in certain embodiments, deposition is followed by a conversion to solid film that involves a thermal, UV, microwave or plasma process. These deposition sand conversion operations are performed in the same reaction chamber. In other embodiments, the deposition may be performed in a first chamber and then transferred to a second chamber for a thermal or plasma anneal. For example, reactors that are configured for plasma reactions may be used for both the deposition and plasma anneal operations. Other reactors may be used for deposition and thermal anneal operations.
Within the reactor, a wafer pedestal 918 supports a substrate 916. The pedestal typically includes a chuck, a fork, or lift pins to hold and transfer the substrate during and between the deposition and/or plasma treatment reactions. The chuck may be an electrostatic chuck, a mechanical chuck or various other types of chuck as are available for use in the industry and/or research.
The process gases are introduced via inlet 912. Multiple source gas lines 910 are connected to manifold 908. The gases may be premixed or not. The temperature of the mixing bowl/manifold lines should be maintained at levels above the reaction temperature. Temperatures at or above about 80 C at pressures at or less than about 20 Torr usually suffice. Appropriate valving and mass flow control mechanisms are employed to ensure that the correct gases are delivered during the deposition and plasma treatment phases of the process. In case the chemical precursor(s) is delivered in the liquid form, liquid flow control mechanisms are employed. The liquid is then vaporized and mixed with other process gases during its transportation in a manifold heated above its vaporization point before reaching the deposition chamber.
Process gases exit chamber 900 via an outlet 922. A vacuum pump 926 (e.g., a one or two stage mechanical dry pump and/or a turbomolecular pump) typically draws process gases out and maintains a suitably low pressure within the reactor by a close loop controlled flow restriction device, such as a throttle valve or a pendulum valve.
It should be noted that the apparatus depicted in
Within the reactor, a wafer pedestal 1009 supports a substrate 1011. The pedestal typically includes a chuck (sometimes referred to as a clamp) to hold the substrate in place during the deposition reaction. The chuck may be an electrostatic chuck, a mechanical chuck or various other types of chuck as are available for use in the industry and/or research. A heat transfer subsystem including a line 1013 for supplying heat transfer fluid controls the temperature of substrate 1011. The wafer chuck and heat transfer fluid system can facilitate maintaining the appropriate wafer temperatures.
A high frequency RF of HFRF source 1015 serves to electrically bias substrate 1011 and draw charged precursor species onto the substrate for the deposition reaction. Electrical energy from source 1015 is coupled to substrate 1011 via an electrode or capacitive coupling, for example. Note that the bias applied to the substrate need not be an RF bias. Other frequencies and DC bias may be used as well.
The process gases are introduced via one or more inlets 1017. The gases may be premixed or not. Preferably, the process gas is introduced through a gas supply inlet mechanism including orifices. In some embodiments, at least some of the orifices orient the process gas along an axis of injection intersecting an exposed surface of the substrate at an acute angle. Further, the gas or gas mixtures may be introduced from a primary gas ring 1021, which may or may not direct the gases toward the substrate surface. Injectors may be connected to the primary gas ring 1021 to direct at least some of the gases or gas mixtures into the chamber and toward substrate. Note that injectors, gas rings or other mechanisms for directing process gas toward the wafer are not critical to this invention. The sonic front caused by a process gas entering the chamber will itself cause the gas to rapidly disperse in all directions—including toward the substrate. Process gases exit chamber 1003 via an outlet 1022. A vacuum pump (e.g., a turbomolecular pump) typically draws process gases out and maintains a suitably low pressure within the reactor.
In certain embodiments, high-cost features of the Speed™ or other HDP-CVD tool may be eliminated. For example, the present invention may be implemented on a HDP-CVD reactor without a dome and/or turbo-molecular pumps.
As indicated above, in certain embodiments, a CVD reactor may include a baffle assembly.
The following examples provide details illustrating aspects of the present invention. These examples are provided to exemplify and more clearly illustrate these aspects of the invention and are in no way intended to be limiting.
A flowable film was deposited in gaps on a substrate under dark conditions as described above with reference to
After deposition, the film was exposed to an oxygen plasma for 270 seconds. Oxygen flow rate was 500 sccm and RF power was 9000 W. The wafer substrate temperature during the plasma treatment was ˜500 C.
A similarly deposited film was exposed to helium plasma for 60 seconds. The helium plasma treatment was observed to remove the Si—OH bonds. No changes were observed in the Si—H bonds. A similarly deposited film was exposed to a steam plasma for 180 seconds. The steam plasma treatment was observed to remove the Si—OH bonds and cause a slight decrease in Si—H bonds. A slight increase in Si—O bonds was also observed.
While this invention has been described in terms of certain embodiments, there are various alterations, modifications, permutations, and substitute equivalents, which fall within the scope of this invention. It should also be noted that there are many alternative ways of implementing the methods and apparatuses of the present invention. Further, there are numerous applications of the present invention, both inside and outside the integrated circuit fabrication arena. It is therefore intended that the following appended claims be interpreted as including all such alterations, modifications, permutations, and substitute equivalents as fall within the true spirit and scope of the present invention.
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State to hold school shooting response training
FAIRLEE The Department of Public Safety will be hosting an emergency response and school shooting seminar in Fairlee today.
The seminar is being offered to fire, police and emergency management personnel, along with municipal leaders, teachers and school officials. It will be conducted by Jay Ruoff, division chief of Littleton Fire Rescue in Colorado. The session will take place at Lake Morey resort from 8 a.m. to 4 p.m.
Every community must consider the possibility that such an event may occur in their jurisdiction and review their response capability, said John Wood, deputy commissioner of public safety, in a news release. The response to acts of ultra-violence will require a rapid, organized and coordinated effort on the part of all agencies involved, and this seminar is one more step in solidifying the relationship between the agencies that would be involved in the event of a school shooting.MORE IN Central VermontStephen Goldberg is back with a vengeance. Full StoryBROOKFIELD A tiny Vermont towns famous wooden floating bridge, believed to be the only one of... Full StoryMemorial Day celebration in Williamstown Full Story
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Smith Optics
Maze Helmet
- Color:
- matte black
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Description: Maze helmet
- Molded into the world's lightest certified snow helmet
- Removable goggle lock
- 9 vents
- Airflow climate control
- Snapfit SL2 ear pads
- Lightweight in-mold construction
- AirEvac 2 ventilation
- Self-adjusting lifestyle fit system
- Skullcandy™ audio systems available
Material: Polycarbonate and ABS Plastic
Brand: Smith Optics
Origin: Imported


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About Brian (Scotty) Willhite
I was born in Helena, Arkansas in 1979 to Larry and Janet Willhite. I was raised in Monroe, Arkansas and attended school in Clarendon. In 1997 I joined the United States Air Force where I spent four years as an Avionics Technician. I received an honorable discharge in 2001 and returned to Arkansas.
I began attending school at UALR, but transferred to Harding University and obtained a degree in English. Upon graduation I received my license to teach. I have taught at White County ALE and Des Arc Public Schools. I am married to Sallie Willhite and we have four children.
Brian (Scotty) Willhite on the Issues
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11.05 Folks, 8701 people in the 1st district voted for liberty last night. I wish I c...... Read more
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It's a Fourth of July Tradition
The 29th Annual PleasureLand RV Show & Go is a Fourth of July tradition for race fans, and this year will be no different. This year's event (July 3-5) will be a full weekend of thrilling racing, featuring Muscle Car Series drag racing, National Auto Sport Association (NASA) racing and the Trans Am Series.
In addition to great racing action, fans will also be treated to a classic car show, live music, a spectacular fireworks display,
kids activities and on-site camping.
A major change in this year's racing program includes the addition of the Trans Am Series, which used to be the premier event during BIR's Muscle Car Shootout on Labor Day weekend. Now, Show & Go fans will be treated this SCCA Pro Racing event that features three classes of racing on the track at the same time for a 40-lap, 100-mile race.
Also on the 2.5-mile Competition Road Course this weekend will be NASA and its exciting brand of road racing. NASA features a variety of race cars and high performance street cars. It offers instruction at BIR prior to the event for drivers who want to give racing a try.
On the drag strip, the Show & Go features some phenomenal drag racing by the seven Heads-Up classes that will be battling in the second race of the three-race Muscle Car Series. Fans will be treated to some serious horsepower that produces runs of 6-7 seconds and speeds over 200 mph. It's intense drag racing that brings race fans back year after year.
Drivers in the Muscle Car Series are competing for series points, prize money, and ultimately, a series championship. The race features the cars in Pro Outlaw, Outlaw, King Street, Real Street, True Street and the new 660 Outlaw Street. The race will also highlight 10 Index classes, the winners of which have a separate run-off to crown the Index Class Champion. Three Strip Eliminator classes, Truck Eliminator, and Manual Transmission class round out the race schedule. It's a full weekend of racing, with qualifying that runs Friday and Saturday, and eliminations on Sunday.
The Show & Go wouldn't be the same without a bunch of other activities off the track. A classic car show will be on display in front of the brick condos on Saturday. A spectacular fireworks display Saturday night and live music completes the weekend.
It's three great racing events for the price of one! And SCCA racing goes on rain or shine, so weather won't stop the racing going on at BIR this weekend.
Muscle Car Series Drag Racing – BIR photo
Trans Am Series photo by Rick Corwine


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Monterey is a great place for shooting if we wanted to make the gathering into a photo trek. But, it's probably not as convenient to get to as some other "central" venues, and its more expensive than many places, as well.Originally Posted by Aggie
Perhaps it would be a good idea to get a sense of preferences between:
1. a photo day trip with a party in the evening, or
2. just a party in the evening.
If its a photo day trip, then the questions of where, what time for gathering, and all that sort of thing come into play.


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Lead tape placement qns
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Posts: 1,960
Oh, and I took this out of the previous post (too long) cause it wasn't wholly relevant, but I still think it's rather interesting information (though I have no solid proof since I don't have a bunch of advanced equipment as well as Sampras' rackets and so on). It is purely theoretical (most of it), but I feel it's quite logical and it explains a lot of what is already confirmed and what I read on these boards (which isn't always true as we know when it comes to conspiracy theories of pro rackets).
The ProStaff Tour, which the n90 design is based off of, was meant for Pete Sampras. Sampras would place a lot weight around that general area where a majority of the ProStaff Tour's weight is centered as counterbalance for the lead he puts on the head (or at least Nate Ferguson did it). With this, Ferguson would have to put less lead in his racket and could just slap it on the head and be done with it. (Yes, Wilson will occasionally make rackets specifically designed for top pros and sell them to the public, which is a mistake since those rackets were incomplete and require lead to finish it.) This is another reason why the K90 is so popular - it's a
product. Federer has been using that EXACT racket (specs, weight distribution, EVERYTHING) for 7 years now. Recently he seems to be adding a little bit more weight to it, but it's hardly a noticeable difference aside from more comfort (it could explain the recent pile up of errors though in the past few years; yes I said it wasn't a noticeable difference, but some people can feel the performance difference and I'm sure Federer is one of them). He probably did it in his attempt to create a heavier ball and win the French Open. Everything he's done in the past several years has all been for that. If he never cared, he'd still be ripping relatively flat, penetrating winners all over the place. Now he hits with far more spin and might have changed his racket setup slightly since 2006 to help that. All I really know though, is since his switch to the K90 (or him staying with the K90 but with the K90 paintjob, whatever you prefer), is that his groundstrokes are occasionally very erratic, which has pretty much never happened during his rise to power and his stay atop the ATP ladder. Also, sometime since the switch, he's been adding weight under the bumper guard (polarizing the racket, making it less stable as I mentioned). You put two and two together and you can logically infer these points that I have mentioned. If he stayed with a stock K90 (with tight quality control), he probably would still be playing as well as he did in 2006 (and still won the French Open without sacrificing the 2008 Australian Open, 2008 Wimbledon, and the recent 2009 US Open). But either way, he'd still get crushed by Nadal. Polarizing your racket only makes it worse against him. But at least he generates a heavier ball and still dominates a majority of the tour.
[K]Six.One Tour (3) 367.5 grams 31.7 cm balance.
Mains: Babolat/Wilson Natural Gut @ 23 kg // Crosses: Luxilon Alu Power Rough @ 21.5 kg
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Mills race 2004
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Mills race 2004
Does anyone remember the Mills Race in 2004? If you were in it I would like to read your storie. I was only a crew member then. My recolection of it was we clocked 52kt. winds at one time. We were sailing on an Evilyn 42 on the second leg as rail meat and got washed aft to the cockpit from a wave port beam, (my guess would be about eight feet,) and almost lost the Captain. we were well over powered. That is the only time I got sea sick. We did finish in record time as everyone else who finished, We were to place fourth in our class. Many boats suffered damage and droped out of the race, others dropped out for safety and sea sickness and others finished with retrofit and repaired tillers and broken masts (so I've heard). If anyone was there, I would like to read your story.
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Gear Review
Convincing myself that more often than not, you get what you pay for, I finally treated myself to an expensive winter coat this year. The other reviews raved about how warm it is, but I feel cold in 30F weather in NYC. However, the hood is extremely warm, unlike the rest of the coat. Overall, I feel like my no name, less expensive coat was warmer. Guess I was wrong; I paid for the name.
View More Details on The North Face Ice Jacket - Men's


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Born: July 25, 1972
Bay Area native of Puerto-Rican ancestry, FEMI has established her musical presence with powerfully sweet vocals, passionately poetic song writing and sultry production. Her music has been defined as neo-funk & soul but its roots go much deeper with an infusion of afro- latin/carribean rhythms, jazz, hip-hop, salsa and rock, blending perfectly to create a unique sound all her own.
As one of the pioneers of the Oakland underground music scene, FEMI began laying the groundwork as an emerging artist, captivating the heart, soul and ears of those in underground Oakland art community, unaware that she was painting vivid collages of sound and texture that were considered experimental for the time...
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Femi Kuti | Boulder | Review | PicsFebruary 24, 2011 February 22, 2011
Femi Kuti and the Positive Force, Yael Naim and Dave Liebman Join the...February 12, 2010
High Sierra Music Fest: Avetts, Femi, Rre, Dr. Dog, SlipMay 30, 2009
Nigerian Authorities Shut Down Femi Kuti's Club the ShrineApril 20, 2009 January 09, 2009
A veteran of Oakland's cultural arts scene, Femi's been a dancer, hip-hop MC, spoken-word poet and performance artist, in addition to a singer. Her stylistic versatility extends to her music, a blend of soul, funk, jazz, salsa, house, hip- hop and reggae that she's dubbed neo-funk. --Eric Arnold, East Bay Express (Dec 06, 0006)


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Oh, the Faces you'll see: The Arvada Center updates portraiture in a summer exhibit
Xi Zhang, "Yian Yang Tian." Courtesy of Plus Gallery.
The Arvada Center galleries will greet the summer with a cheerful set of shows, Faces, Places & Spaces, which open in unison tonight with a reception from 6 to 9 p.m. and remain on view through August 26. Two artist nights, each with a panel discussion and meet-and-greet, are also scheduled on June 28 and August 4; visit the Arvada Center online for details.
Faces is a swift trip around the visage, interpreted in various mediums by a who's-who of some of our favorite local artists, and it's -- pow! pow! -- drop-dead fun from start to finish. Here's a sampling of the faces you'll see:
All photos, courtesy of the Arvada Center.
Wes Magyar, "Lineage III." Courtesy of Plus Gallery.
Noah Kalina, "Everyday."
Nate Baldwin, "Self Portrait."
M. Vlasic, "Warrior." Courtesy of Walker Fine Art.
Marie EVB Gibbons, "Disguise."
Margaret Kasahara, "Marilyn." Courtesy of Sandra Phillips Gallery.
Dave Seiler, "Dancing with Betty."
Evan Colbert, "Punks" (detail of installation).
John Bonath, "Executive Suite," from the Portraits for a New Age Series.
Christopher R. Perez, "The Unadored."
Bill Amundson, "Got To Get It Out Of My Head." Collection of Brian Tschumper, courtesy of Plus Gallery.
Find information on hundreds of other arts and entertainment events in our online Calendar.
To keep up with the Froyd's eye-view of arts and culture in Denver, "like" my fan page on Facebook.
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Arvada, CO 80003
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LETTER TO THE EDITOR: A Preview of Obamacare?
POULSBO - Reader submitted
Many thanks for your excellent Sept. 29 editorial, "Clean Up the Veterans Home Leadership Mess":
I agree wholeheartedly.
I could not help wondering whether the caliber of expertise and mismanagement that you describe is what we all might have to endure under "Obamacare." What a dreadful prospect!
It was interesting and frightening — though not unexpected — to read that this awful situation was caused in part by the fact that the state Veterans' Affairs director is allowed to interpret the governing statutes "liberally." Are we threatened with the same standards of mismanagement and abuse under Obamacare? Will the liberals strike again?
Denis Gorner
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Gareth Pugh
trapeze dress
- Contact us:
Thank you for your enquiry
Your message has been received and one of our Customer Services representatives will get back to you shortly.
We aim to respond to enquiries within 24 hours and normally do so much faster.
Our Customer Services team is available Monday to Friday 8am-11pm and Saturday to Sunday 9am-9pm EST - if you contact us outside of these hours it may take us a little longer to respond to your enquiry.
Depending on the nature of your enquiry, we may have to contact our partner boutique for further information, occasionally this can add to our response time.
In the mean time, you may be able to find the answer to your query in our Frequently Asked Questions section.
Off white polyester blend trapeze dress from Gareth Pugh featuring a boat neck, darts to the chest, a sleeveless design, side seam pockets and a short length.
Item ID: 10690280
- Measurements:
- item fits true to size
- Height:
- 175
- Bust/Chest (cm):
- 81
- Waist (cm):
- 61
- Hips (cm):
- 91
- Model is wearing size:
- 38
Models Measurements
- Lining Composition
- Silk 50%
- Composition
- Lamb Skin 100%
- Lining Composition
- Cotton 50%
- Composition
- Polyester 50%
- Composition
- Rayon 35%
- Composition
- Polyurethane 15%
- Dry Clean Only
- Brand Style ID
- Ph14s8544nfb
Gareth Pugh is famous for his inflatable clothing and breaking boundaries. After gaining critical acclaim with his graduate collection, Pugh went on to be one of the most talked about designers in the industry, with Kylie Minogue and Roisin Murphy frequently sporting his creations.
Your order will be shipped directly from the boutique to you. Farfetch ships worldwide using DHL and UPS, and you will be able to track your order at any time. The cost of shipping your order will be calculated at the checkout.
Import duties information
Delivery duties are included in the item price when shipping to all EU countries plus USA, China, Canada, Switzerland, Singapore, Australia, Japan, South Korea, Kuwait, Qatar, U.A.E, Saudi Arabia and Taiwan.This means all import duties are included in your order, so the price you see is the price you pay. You will not receive an additional duty bill from the courier to receive your shipment. If you are ordering from within your own customs zone or country, import duties will not be applicable anyway, however you may have to pay VAT or local Sales Taxes where applicable (for the UK and USA these are included at the checkout).
Delivery duties are not included in the item price when shipping to all other countries. This means you may be liable to pay import duties on receipt of your order.
Free returns pick-up
You have 14 days from receiving your order to return the item to the boutique using our free returns pick-up service. We strongly recommend that you book your free returns pick-up within 7 days of receiving your order to ensure that it arrives back to the boutique in time. Please note for standard orders we can only collect returns from the same country to which your order was delivered. For click and collect orders we can collect your return from the country your order was delivered to and also the country of the original boutique you ordered from. We are unable to accept returns of earrings for hygiene reasons. We are also unable to accept returns of fine Jewellery. Click here to read our full returns policy.
New York , United States
At the core of ØDD is the belief that fashion is relative to the person, not to the gender. Every season the boutique offers exclusive collaborations with designers and artists to create a constantly evolving space for bold men and women and those who don't want to be pigeonholed.


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As with any immunohistochemical technique, sample preparation is paramount. We have used the Elite ABC kit on paraformaldehyde-fixed, paraffin embedded brain and colon sections and we have found little difference in the quality of signal achieved between tissues. The strength of this kit is that, given the strong affinity of avidin for biotin, the signal can be amplified many-fold over primary-secondary antibody interactions alone. I have tested our antibodies on tissues fixed with several different fixatives, including the above-mentioned paraformaldehyde, acetone, methanol, and Bouin's fixative, and in each case color development using the ABC Elite kit was far superior to HRP-conjugated secondary antibodies alone. In at least one of the fixatives, no signal was visible unless the ABC kit was used.
The information which comes with the kit is quite detailed, and several protocols, considerations and references are provided, allowing optimization of the kit for individual experiments. One slight drawback is the need for the researcher to provide several chemicals, not included in the kit. However this is ameliorated by the fact that most of the reagents are readily available in the majority of labs, including hydrogen peroxide (to block endogenous peroxidase activity), PBS (washing), xylene and ethanol (if paraffin sections are used), a chromogen such as DAB, and naturally the primary antibody.
We have also incorporated an "antigen-retrieval" step (using either detergent, or boiling in a sodium citrate buffer), which allows better permeabilisation of tissues, and is an especially effective technique if the antigen of interest is intracellular. This antigen-retrieval step has no adverse effect on the ABC kit, and can also increase signal. We have found that background staining using the ABC kit can be problematic, although this can usually be minimized by decreasing primary antibody concentration, or increasing number/duration of washes.
In summary, the Vectastain Universal Elite ABC kit is a very powerful method for increasing signal intensity in immunohistochemistry. The range of troubleshooting advice and protocols available with the product information is, in my opinion, first-rate, and the kit is not overly expensive. However the secondary antibody provided in the kit, although called "universal", is targeted against only mouse or rabbit IgG, although it may well work with antibodies raised in other species. Furthermore, DAB is a carcinogen, which must be handled carefully. Overall though, this is a kit I use often, and would have no hesitation in recommending to others.
Seb Dworkin
Graduate Student,
Peter MacCallum Cancer Centre
Inexpensive, good quality results, clear information available quickly.
Protocols must be optimized and other chemicals need to be sourced; some chromogen substrates may be toxic.
An easy to use kit which provides good quality results.


text:
Overall customer review score:
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Comments On Feb 21, 2015:Smells like oranges and looks awesome
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Comments On Dec 04, 2014:As a KTM fanboy, I enjoy having it hang from my rear view. However, the smell wasn't very intense and didn't last very long. I found it to be more of an ornament than an air freshener.
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Comments On Jan 23, 2014:Put on my truck and it smells great even bought a couple more lol
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Taylor Swift opens Grammy Awards as Mad Hatter
More News from Associated Press
LOS ANGELES – A guy riding a tricycle with a flame-thrower attached and a company of mime clowns helped Taylor Swift open the Grammy Awards.
Swift dressed as the Mad Hatter in white top hat, tails, shorts and tall boots during the surreal version of her hummable hit "We Are Never Ever Getting Back Together."
The singer pretended to talk to the offending boyfriend on the phone: "I'm busy opening the Grammys and we're never getting back together."
Dan Auerbach of The Black Keys and electronica star Skrillex were the early leaders with three wins apiece following the Grammy's pre-telecast awards show. Auerbach's fellow top nominees Kanye West and Jay-Z picked up two early wins and Britain's Mumford & Sons have one.
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text: Meta Battle Subway PokeBase - Pokemon Q&A Login Register All Activity Questions Unanswered Tags Users Ask a Question Rules Chat How much exp gain after a battle? 0 votes experience asked Apr 13, 2013 by nortorm Please log in or register to add a comment. Please log in or register to answer this question. 1 Answer 0 votes Bulbapedia Read there //Jofly answered Apr 13, 2013 by Jofly Please log in or register to add a comment. Related questions By how much does exp point power lvl 1 increase the exp that you gain per battle? Are we able to know how much experiece are we going to gain if we beat a wild or captured pokémon? Would my Pokemon gain EXP bonus in this case? Do Pokemon gain Exp. Points during WiFi battles? Why does the Luxray that I bred seem to gain less Exp. points compared to other Pokemon? How much Exp does completing a stage in Pokemon Shuffle give each Pokemon, and does it differ for each stage? How much more EXP does a Lucky Egg give me than an EXP Point Share? How much more EXP will you get from a traded pokemon? Useful Meta Posts How to change your username How to add a user avatar Why was my post hidden? The points system Question etiquette Flags vs Downvotes Anime FAQ


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Fairgrounds cost rises $905K
Increase blamed on project delay surrounding suits
The halt in Nueces County fairgrounds construction increased costs of the project by almost $905,000.
Lawsuits questioning the county's bidding and construction process forced the county to stop construction in January for several months. The county expected the halt to increase total project costs because the construction company was paid $94,000 to shut down the site, and costs for subcontractors and supplies had the potential to increase.
The extra $904,954 was approved Wednesday by the commissioners court in less than 25 minutes and with little discussion. The total construction contract now is $28,460,854.
Steve Waterman, a commissioners court assistant, explained that the difference is the bottom line between what was locked in before the lawsuits and what the final costs for Zachry Construction are to finish the work.
"The money is in the bank to do these things, it's just a matter of allocating," he said.
Waterman said construction costs increased about $1.1 million, but savings in other areas helped lower the overall additional cost.
He also said the county has lost between $500,000 and $750,000 in revenue from not being able to open on time. Commissioner Oscar Ortiz, whose precinct includes the fairgrounds, said it was scheduled to open in April.
The county stopped work at the fairgrounds in late January after determining $53 million in construction contracts were illegal. That decision came after Fulton Coastcon Construction said in a lawsuit that the county violated state law in awarding a contract for the Heritage Center by not reading the bids aloud in public. The county settled that suit Jan. 24, and in reviewing the legal issues involved discovered bids for previous work on the showbarn, exhibition center and banquet hall also were not read aloud.
Another suit by local businessman and philanthropist Dusty Durrill alleging violations regarding the method of construction also caused some delay. That suit was settled in March, and the county is required to conduct a viability study before building the 4,500-seat Heritage Center arena.
The county rebid the remaining work and resumed construction in late March. The second part of this first phase, the equestrian center, is scheduled for completion in September. The showbarn, exhibition center and banquet hall were substantially complete in January and have been the site of several events.
Ortiz said the lawsuits were unfortunate.
"It made us be a little innovative in our accounting," he said.
Ortiz said an expected surplus of about $500,000 and about $1.7 million planned for the capital projects budget can be put back into the Heritage Center project at the end of the fiscal year in October.
County Judge Loyd Neal said he is glad to be nearing completion of the first phase of the fairgrounds project.
The money previously planned to cover the anticipated increase to finish Phase 1 called for using future years' capital budgets -- which typically fund major facility repairs and technology upgrades -- and projected surplus from the fiscal year that ends in September.
Neal said those plans have changed, and the money now will come from certificates of obligation, which are not voter approved, that the court approved in December.
"We agreed it's not prudent to take those monies when there is still so much unknown out there," he said.
About $28.95 million from the $34 million in certificates of obligation were dedicated to the Heritage Center. Ortiz said $3 million of those funds now are being used to finish Phase 1 of the project, leaving less for the center.
Neal said the county is committed to finishing this phase but would not elaborate on how this impacts the plans for the Heritage Center.
That won't keep the county from doing needed facility repairs at the jail and courthouse estimated at $12 million in an April report, Ortiz said.
"We're definitely going to find a way to get it all done," he said.
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VIDEO: Agencies embrace mobile app explosion
The development of mobile applications or apps is expanding within the federal government. The General Services Administration showcased some of the apps coming out of agencies at last week's FOSE Conference in Washington.
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The technology is based on Microsoft's Kinect, used in the XBox video gaming system, and now it's the basis of new tools developed by the State Department's Office of eDiplomacy. State showcased their innovation this week at the FOSE Conference in Washington.
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Gregory Isaacs dies
'Night Nurse' reggae singer Gregory Isaacs died in London this morning (2510.10) from cancer.. The latest Clubbing news - Skiddle: The UKs ...
Amazon MP3: Night Nurse
from Gregory Isaacs, Tad's Record, 1982
Amazon MP3: Night Nurse: The Best Of
from Gregory Isaacs, UMC (Universal Music Catalogue), 2011
Night Nurse by Gregory Isaacs: Amazon.co.uk: Music
Night Nurse by Gregory Isaacs: Amazon.co.uk: Music
BlinkX Video: HAMABIPULGADA 28-10-2010 GREGORY ISAACS SPECIAL
1- All I Have Is Love 2-If You?re In Love 3-One One Cocoa Fill Basket 4-Far Beyond The Vallet 5-Mr Cop 6-One More Time 7-I?ll Cool You 8-Night Nurse DUB 9-Rumours 10-Heartical Don... - 19.12.2010, Blip
St. Kitts Music Festival's night two sees another impressive turnout
25.06.2011 [SKNVibes.com] - He also sang Gregory Isaacs' 'Night Nurse' and invited his son onstage to render a few songs. ' His performance lasted for about an hour, which led to a short break, and was followed by Black Ryno who was onstage for only 15 minutes.
BBC News - Night Nurse singer Gregory Isaacs dies aged 59
Reggae star Gregory Isaacs - best known for his song Night Nurse - has died at the age of 59 at his London home, his manager confirms.
Guardian: Gregory Isaacs obituary | Music | The Guardian
Reggae musician known as the Cool Ruler who scored a big hit with Night Nurse
Reggae star Gregory Isaacs loses battle with cancer at 59 - 3am &...
Reggae singer Gregory Isaacs - famed for his hit Night Nurse - died yesterday aged 59.
Twitter Posts: Phat Joe (Phatjoe985)
28.06.2011 @TheReggaeCafe song: Gregory Isaacs "Night Nurse" http://bit.ly/niC4F
Twitter Posts: Ty! Blanco! (FlyeMamacita)
27.06.2011 #np Night Nurse by Gregory Isaacs
[Dubstep] Night Nurse Gregory Isaacs Dubstep Rmx / Dj Edsik freedwld
Alouette Street records present: Night Nurse Reggae / Dubstep remix by Dj Edsik - 2010 Rest In Peace Gregory video bootleg >>>> FREE DOWNLOAD: CLICK...
Gregory Isaacs – Night Nurse - British Underground
Gregory Isaacs – Night Nurse Live Brixton 1984 Milo Miles, writing in the New York Times, described Isaacs as "the most exquisite vocalist in reggae".
Night Nurse - Gregory Isaacs - Four Dogs Music
Night Nurse, CD by Gregory Isaacs, available to order from Four Dogs Music. Another classic from The Cool Ruler himself, Gregory Isaacs. Remastered with 4 ...
Night Nurse bass tab by Gregory Isaacs - Tabulous
Gregory Isaacs (born on 15 July 1951 in Fletchers Land, Kingston, Jamaica and died on 25 October 2010 in London) was a Reggae singer/songwriter. Gregory ...
Wally Badarou On The Gregory Isaacs - Test Pressing
We got in touch with Wally Badarou to find out how his contribution to the classic Gregory Isaacs 'Night Nurse' album came about. Here's what ...
• Gregory Isaacs - Night Nurse • Back To Black Vinyl •
Night Nurse is Gregory Isaacs best known album, and with a … back, feel-good sound, this reggae classic was described by Mojo as, "Isaacs at his most ...
Gregory Isaacs - Night Nurse - SingStore™ - SingStar
Gregory Isaacs - Night Nurse. Gregory Isaacs. Night Nurse. Song Details ... More songs by this artist. Gregory Isaacs. Night Nurse. Community Gallery. Photo.
Gregory Isaacs - Night Nurse | Island 50 | Official website
As much is likely to change now for Gregory Isaacs, even though the Night Nurse album represents no departure of any kind whatsoever from the singer.
Roots Archives - Artist : Gregory Isaacs
Random videos view all · Gregory Isaacs - Night Nurse Gregory Isaacs - Recording at Harry J Gregory Isaacs - Number One ...
TalkPunk • View topic - Gregory Isaacs - Punk 77!
He was a great songwriter with a lovely, sweet voice, with so much expression on a sad song like Night Nurse (was that about drugs?
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... to High), A-Z, Z-A, Release Date (most recent first), Release Date (most recent last). Boss Shots / Gregory Isaacs / Night Nurse: The Best Of. Gregory Isaacs ...
Treme Wrap-Up: Coconuts and Shoes
06.06.2011 [OffBeat Magazine] - Lots of love to the Starbucks on Queen St. East in the Beaches in Toronto for the non-stop loop of '70s reggae (including Linton Kwesi Johnson's "Bass Culture" and the late Gregory Isaacs' "Night Nurse"!) for a fine soundtrack for this morning's
Gill Scott-Heron in memoriam: El blues del reggae
26.06.2011 [Reggae.es] - Ni tampoco es de extrañar que el reconocimiento a su descomunal figura le llegara de la misma Jamaica, como estrella invitada del Reggae Sunsplash en un año, 1983, donde monstruos como Gregory Isaacs con "Night Nurse" y Sugar Minott estaban en el
Gregory Isaacs - Night Nurse - şarkı sözleri, İngilizce ve Türkçe...
Gregory Isaacs - Night Nurse - şarkı sözleri, İngilizce ve Türkçe çevirisi, klibi.Tell her try your best just to make it quick Woman tend to the sick 'Cause...
Reggae star Gregory Isaacs dies | The Times
The Jamaican singer, best known for the song Night Nurse, died after suffering from lung cancer
Gregory Isaacs dies | Music | Entertainment
'Night Nurse' reggae singer Gregory Isaacs died in London this morning (2510.10) from cancer.
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With a career spanning over 40 years, Gregory Isaacs had hundreds of hits. The Jamaican born reggae star's most popular hit was Night Nurse but there was...
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About Schools in Hudson, IL
Hudson offers a range of educational opportunities with one elementary school.
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Hudson, Illinois is located in McLean County. Nearby cities and towns include Kappa, Towanda, Normal, Carlock, Bloomington, El Paso, Twin Grove, Lexington, Danvers, Gridley, Congerville, Secor, Panola, Cooksville, Goodfield, Downs, Chenoa, Eureka, Stanford, Roanoke, Ellsworth, Deer Creek, Benson, Heritage Lake, Colfax, Mackinaw, Flanagan, Heyworth, Minier, Minonk, Arrowsmith, Le Roy, McLean, Anchor, Metamora, Dana, and Washington. Hudson is a rural community with a population of 1,857. The median household income is $83,065. In Hudson, 63% of residents are married, and families with children reside in 44% of the households. Half the population of Hudson commutes 19 minutes or less to work, with 60% of residents holding white collar jobs and 40% residents holding blue collar jobs. The median age of homes in Hudson, IL is 26 years, with 91% of those homes owned, 8% rented, and 0% not occupied. In the previous year, 26 Hudson properties were sold. The median sale price of a home in Hudson in the previous year was $156,711.
Hudson offers a range of educational opportunities with one elementary school.
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