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By Debbie Emery – Radar Reporter
The disgust at comedian Daniel Tosh's joke about rape during a stand up act has escalated since his performance last Friday night, and RadarOnline.com has exclusive insight from a crisis support group explaining why his actions had such wide-reaching outrage.
"When you look in a room full of people at a Daniel Tosh show, the chances are one of them has been a victim of rape and they are being affected by what he says and the laughter, so its more impactful than you think," Rick Gipprich Jr., Communications Director of the Texas Association Against Sexual Assault, told RadarOnline.com in an exclusive interview.
PHOTOS: Celebrity Racist Rants
As RadarOnline.com previously reported, the Comedy Central star has now apologized for the offensive joke he made toward a female audience member during a gig at The Laugh Factory in Hollywood.
"Tosh (started) making some very generalizing, declarative statements about rape jokes always being funny, how can a rape joke not be funny, rape is hilarious," an audience member complained about the incident on Tumblr.
PHOTOS: Celebrity Death Threats
"Did he mean it intentionally, probably not? But we should never try to get a laugh at the expense of a rape victim because it is never funny. What he did was highly inappropriate," said Gipprich.
He went on to reveal that it is not the first time the comedian has made off-the-wall comments about sexual assault or date rape and there have been a number of references on his show Tosh.O.
PHOTOS: Stars' Most Embarassing Moments
"He is very tongue in cheek and uses a sarcastic and witty humor, it is part of his style, but regardless, it is not funny and these are the kinds of things we battle every single day.
"When one person jokes about an issue like rape or domestic violence it makes it kind of OK for other people to do it as well," he explained. "If you start normalizing really horrible and violent things that have happened to women and children then it makes us almost desensitized to it when people actually report it.
PHOTOS: The Name Game – Celebs Who've Changed Their Names
"It is a very impactful thing and I think those consequences are unintentional but it happens every day.
"Statistics show that one in five women will be sexually assaulted at least once in their lifetime, making it likely that everyone single one of us knows at least one person in our lives who is a survivor, whether we are aware of it or not."
PHOTOS: Top Celebrity Sex Scandals
Tosh has been berated by angry Twitter messages since last week's show, and Gipprich warned that the negative reaction may escalate. "There is a backlash with these things – people get offended, stop watching your show, or they ask for their money back," he said.
The comedian addressed the incident on his own Twitter page Tuesday, writing, "all the out of context misquotes aside, i'd like to sincerely apologize … the point i was making before i was heckled is there are awful things in the world but you can still make jokes about them."
PHOTOS: Scandalous Hollywood Ladies
However, Gipprich doesn't know how deep-rooted the apology is. "I think his apology is acceptable. What I don't know is if he was truly impacted by their reaction," he told Radar.
Maria Menounos Makes Shocking Revelation: She Was Sexually Assaulted By Doctor
Man Files Complaint Against Sylvester Stallone's Sister; Claims She Was Sexually Abused By Family Member
Todd Bridges And Corey Feldman Backing Bill To Protect Child Actors From Sexual Predators


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By: Safi-ur-Rahman al-Mubarkpuri
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Reviewer: on 05/13/2014
InshaAllah - his humility and expecting nothing from humans but only his reward from Allah SubhanhuWaTala is heart warming and much to be expected of character in current world conditions. Where did we read that he used to mend his own clothes, eat crushed uncooked food and did not force any labour of his wives? What a beautiful human being. May Peace Be Upon Him forever.
Reviewer: Abdur from Dubai, United Arab Emirates on 07/28/2007
Indeed this is a great book to know the Holy life off our Holy Prophet Muhammad[P.B.U.H.].
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Over 150 Dead, Thousands Injured as Strong Earthquake Hits Sichuan Province
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Medical officers treat a patient at the hospital on April 21, 2013 in... Fotografía de noticiasAsistencia sanitaria y medicina,Catástrofe natural,Chengdu,Emergencias y desastres,Horizontal,Hospital,Paciente,TerremotoPhotographer Feng LiCollection: Getty Images News 2013 Getty ImagesCHENGDU, CHINA - APRIL 21: Medical officers treat a patient at the hospital on April 21, 2013 in Lushan of Ya An, China. A magnitude 7 earthquake hit China's Sichuan province on April 20 claiming over 160 lives and injuring thousands. (Photo by Feng Li/Getty Images)


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BEAVERTON, Ore. -- Beaverton police say a man wanted on charges of attempting to kill his estranged wife and her boyfriend has been arrested in Idaho.
The police said Friday that Phillip Howells was taken into custody Thursday in Hagerman, Idaho, and was being held in the Gooding County jail awaiting extradition proceedings.
The attacks occurred Oct. 6. Police said the 30-year Howell broke into the home where April Harderer lived with their three young children.
<>Harderer told The Oregonian that Howell used the handle of a knife to hit her repeatedly on the head, and then used the blade to slash her arm and neck.
Police said the children saw some of the attack.


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A novel cold wall single wafer rapid thermal/microwave remote plasma multiprocessing reactor comprising a vacuum chamber having means for mounting a wafer in the chamber, means for providing optical flux mounted adjacent one wall facing the back side of the wafer for optical heating of the wafer, and ports for plasma injection such that remote plasma can be generated and pumped into the chamber. Ports are provided for gas injection both through the plasma generating chamber and for non-plasma injection. The plasma and non-plasma ports are connected through separate manifolds to a plurality of gas sources. The comprehensive reactor design is such that several wafer processing steps can be done sequentially in situ, while providing for optimization of each processing step.
1. A rapid thermal plasma multiprocessing reactor for in-situ growth and deposition of layers on a wafer comprising
a vacuum chamber including top, bottom and side walls,
means for supporting said wafer with a top surface of said wafer to be processed facing the bottom of said chamber,
at least one quartz discharge tube mounted in said bottom of said reactor facing said wafer top surface for conveying plasma gas from a remote plasma generating chamber located outside of said vacuum chamber to said vacuum chamber,
heating means mounted facing said wafer mount for heating said back side of said wafer, and
at least one non-plasma injector port connected through a non-plasma manifold to a plurality of gas sources for selectively conveying gas to said chamber whereby a plurality of processes affecting said wafer may be carried out without removing said wafer from said chamber.
2. A reactor as in claim 1 including a remote plasma generating microwave cavity having an output coupled to said vacuum chamber through said quartz tube, the input to said microwave cavity being coupled through a gas distribution manifold to a plurality of gas sources for growth and deposition of layers on said wafer.
3. A reactor as in claim 1 wherein said heating means comprise an array of lamps positioned outside said vacuum chamber and facing said wafer through a window in said top surface of said chamber to heat said wafer.
4. A reactor as in claim 3 wherein said lamps are tungsten-halogen lamps, said window comprising a quartz window for passing the optical flux to said wafer.
5. A reactor as in claim 1 comprising a plurality of said quartz discharged tubes arranged in a regularly radially spaced array facing said wafer top surface for conveying plasma gas evenly to said wafer surface.
6. A reactor as in claim 5 wherein said discharge tubes surround a sapphire window mounted in the bottom of said reactor whereby photon enhanced processing using laser or ultraviolet is achieved.
7. A reactor as in claim 1 including a gas distribution network comprising said plurality of gas sources selectively connected through a non-plasma manifold to said non-plasma injector port and through a plasma injector to said quartz discharge tube to selectively convey said gases to said vacuum chamber.
8. A reactor as in claim 1 including a plurality of quartz discharge tubes each having an exhaust end emptying into said chamber, the exhaust ends being arranged in a circle concentric with the center of said wafer to convey plasma in an even flow to the surface of said wafer, the non-exhaust end of each said discharge tube being connected to a plasma generating microwave chamber for creating plasma to be conveyed to said chamber.
9. A reactor as in claim 8 wherein said tubes are regularly radially spaced around said circle and mounted at an angle toward the center of said circle for conveying said plasma to said wafer.
10. In a rapid thermal plasma multiprocessing reactor for in situ growth and deposition of layers on a wafer comprising a vacuum chamber including top, bottom and side walls, means for supporting said wafer with a top surface of said wafer to be processed facing the bottom of said chamber, at least one quartz discharge tube mounted in said bottom of said reactor facing said wafer top surface for conveying plasma gas from a remote plasma generating chamber located outside of said vacuum chamber to said vacuum chamber, means mounted adjacent to the top surface of said chamber facing said wafer mount for heating said back side of said wafer, and at least one non-plasma injector port connected through a non-plasma manifold to a plurality of gas sources for selectively conveying gas to said chamber whereby a plurality of processes affecting said wafer may be carried out without removing said wafer from said chamber, a method of fabricating tungsten-gate MOS devices comprising the steps of in situ growth of a gate dielectric by rapid thermal oxidation and rapid thermal nitridation cycles followed by a non-selective tungsten deposition process to form the gate electrode.
11. A method as in claim 10 wherein the tungsten deposition step comprises the steps of injecting WF6, or WF6 +H2 through said non-plasma port, and injecting H2 plasma, Ar plasma or Ar+H2 plasma through said plasma port to non-selectively deposit tungsten on insulating surfaces.
12. In a rapid thermal plasma multiprocessing reactor for in-situ growth and deposition of layers on a wafer comprising
a vacuum chamber including top, bottom and side walls,
means for supporting said wafer with a top surface of said wafer to be processed facing the bottom of said chamber,
at least one quartz discharge tube mounted in said bottom of said reactor facing said wafer top surface for conveying plasma gas from a remote plasma generating chamber located outside of said vacuum chamber to said vacuum chamber,
heating means mounted facing said wafer mount for heating said back side of said wafer, and
at least one non-plasma injector port connected through a non-plasma manifold to a plurality of gas sources for selectively conveying gas to said chamber whereby a plurality of processes affecting said wafer may be carried out without removing said wafer from said chamber, a method of selectively depositing tungsten on exposed silicon areas of said wafer comprising flowing any combination of WF/H2 /Ar without plasma discharge into said vacuum chamber at temperatures up to 450� C.
13. Apparatus as claimed in claim 3 wherein said wafer rests on low thermal mass quartz pins.
14. Apparatus as claimed in claim 12 wherein said wafer rests on low thermal mass quartz pins.
This invention was made with United States Government support under Agreement No. MDA903-84-K-0062, awarded by DARPA. The Government has certain rights in this invention.
This invention is related to and incorporates by reference the disclosure in U.S. application Ser. No. 859,943 filed May 5, 1986, now U.S. Pat. No. 4,718,937, assigned to the Assignee of this invention, and which discloses a process for remote plasma generation, which process is incorporated into this invention.
Future technological advancements in integrated electronics will require development of flexible custom fabrication technology for custom VLSI systems. Present semiconductor wafer processing is based on batch processing technology, i.e., the processing of a plurality of wafers in a given furnace through a single process step, after which the wafers are moved to a different furnace which is dedicated to a different process step.
Low temperatures and short processing times are essential requirements of future VLSI processing. This is especially true with the tremendous growth in the business of producing application specific integrated circuits (ASIC) which by definition are produced in limited quantities, and on which the customer demands rapid turn-around. Reproducible growth of the thin film dielectrics necessary to VLSI devices is difficult in the hot wall furnaces commonly used today due to the long ambient and temperature transient times and constant furnace temperatures. A further difficulty with known furnaces is that it is highly desirable to be able to continuously monitor wafer processing; however, since most standard furnaces are designed to be efficient only for multiwafer processing, extensive in situ real time measurements are difficult to perform.
A related problem in the semiconductor wafer processing field is the need to develop a reliable process for in situ fabrication of tungsten gate MOS devices. The fabrication of such devices requires the growth of a gate dielectric by rapid thermal oxidation (RTO) and rapid thermal nitridation (RTN) cycles followed by a non-selective tungsten deposition to form the gate electrode. Rapid thermal oxidation and nitridation (RTO and RTN) of silicon in oxygen and ammonia ambients has already been recognized as an attractive technique for the growth of silicon nitride, silicon dioxide, nitrided oxides, oxidized nitrides, and application specific (custom tailored) insulators. Tungsten is known to be quite attractive as an MOS gate material, as disclosed by S. Iwata, et al., "A New Tungsten Gate Process for VLSI Application," IEEE Transactions on Electron Devices. Vol. ED-31, No. 9, pp. 1174-1179, 1984. However, a reliable process for in situ formation of tungsten gate electrodes has not been developed. Recently, blanket tungsten films were reported to be deposited on silicon dioxide SiO2 films at substrate temperatures below 450� C. by photo enhanced and microwave plasma enhanced hydrogen plasma chemical vapor deposition (CVD) techniques. See S. Tsuzuku, et al., "Blanket Tungsten Film Formation by Photo Enhanced and Plasma Enhanced Chemical Vapor Deposition," Electrochemical Society Fall Meeting, ECS Vol. 86-2, p. 500, 1986. However, the reproducibility of this process in a commercial environment has not been demonstrated. Moreover, it is not apparent that this process will overcome the classic problems with formation of tungsten gate MOS VLSI devices, i.e., the poor adhesion of tungsten to insulating layers, channeling of implanted dopants through the tungsten gate, lack of oxidation resistance, and gate dielectric degradation.
Among other growth and deposition processes for the formation of VLSI devices, low pressure chemical vapor deposition (LPCVD) of tungsten has emerged as a viable technology for the formation of MOS gate electrodes, low resistivity contacts and contact barriers, multilevel interconnections, and reduction of source/drain parasitic resistance. See Kobayashi, et al., "Non-Selective Tungsten CVD Technology for Gate Electrodes and Interconnection," Proceedings Third Int'l. IEEE VLSI Multilevel Interconnection Conference, pp. 436-442, 1986. However, conventional hot wall LPCVD furnaces are not appropriate for reproducible high rate tungsten deposition and nonselective formation of tungsten on insulators. Present hot wall furnaces suffer from depositing of tungsten on the walls of the furnace, reducing the efficiency of the furnace and eventually requiring disassembly of the furnace for cleaning.
Tungsten gate electrode fabrication by known sputtering techniques requires very pure targets to minimize mobile ion contamination and special effort is needed to reduce sputtering-induced gate damage. Tungsten deposition has also been tried using conventional LPCVD furnaces, operating at temperatures below 400� C. The processes implemented have included silicon reduction of WF6, which is a selective, self-limiting deposition process; hydrogen reduction of WF6 which is a selective process; blanket deposition of tungsten in WF6 +H2 +SiH4, which is accomplished with an injection of silane for the gate electrode formation; and, silicon or hydrogen reduction of WCl6, resulting in non-selective deposition at high temperatures. None of these processes have proven to be capable of reliably defining tungsten gate electrodes in small geometry devices.
It is an objective of this invention to provide a novel cold wall, single wafer, rapid thermal/microwave remote plasma multiprocessing (RTMRPM) reactor for in situ growth and deposition of dielectrics, silicon, and metals including silicon nitride, oxide and oxynitrides, as well as epitaxy of silicon, germanium, silicon carbide and diamond. As a part of the design of this reactor, it is an objective to provide ambient and temperature with controlled short transient times.
A related objective is to provide a reactor efficient at low temperatures and with reduced processing times for VLSI processing in order to enhance the utility of the reactor in the production of high yield, low quantity, application specific integrated circuits.
Another objective herein is to provide for in situ multiprocessing of semiconductor wafers, to eliminate the contamination of wafers that results from carrying the wafer from furnace to furnace, thereby enhancing the circuit yield of the system.
Another objective is to provide an RTMRPM reactor that will enhance equipment versatility and allow for flexible computer aided manufacturing of custom VLSI circuitry.
It is a further objective herein to provide apparatus useful for carrying out a process of selective or non-selective tungsten deposition.
The single wafer lamp heated multiprocessing reactor of this invention provides a highly selective high rate non-plasma deposition of tungsten, or a non-selective deposition of tungsten by plasma excitation. It also offers the capability of LPCVD of tungsten compounds, as well as the possibility of photonic excitation of ambient species.
The objectives herein are achieved by providing a novel cold wall single wafer rapid thermal/microwave remote plasma multiprocessing reactor comprising a vacuum chamber having means for mounting a wafer in the chamber, means for providing optical flux mounted adjacent one wall facing the back side of the wafer for optical heating of the wafer, and ports for plasma injection such that remote plasma can be generated and guided into the chamber. Ports are provided for gas injection both through the plasma generating chamber and for non-plasma injection. The plasma and non-plasma ports are connected through separate manifolds to a plurality of gas sources. The comprehensive reactor design is such that several wafer processing steps can be done sequentially in situ, while providing for optimization of each processing step.
Preferably, the vacuum chamber is a water cooled stainless steel chamber having a window in one wall, with an array of lamps facing the back side of the wafer through the window for heating the wafer. Multiple plasma injection ports are provided, arranged radially around a circle concentric with the mounted wafer to provide an even flow of plasma to the surface of the wafer. The center of the area defined by the plasma injection ports includes a sapphire window for process monitoring and for ultraviolet or laser enhancement of the process.
The features and advantages of this invention will be more clearly understood by referring to the following description which is given with reference to these figures:
FIG. 1 is a schematic of the novel cold wall single wafer lamp heated rapid thermal/microwave remote plasma multiprocessing reactor;
FIGS. 2A and 2B is a schematic of the gas distribution system for the multiprocessing reactor showing the exemplary gas sources, manifolds connecting the gas sources to the plasma and non-plasma injection ports, and the multiport array which is provided in the preferred embodiment of the invention, together with a connection chart (FIG. 2B) showing which gases are available through the respective manifolds to plasma and non-plasma ports;
FIG. 3 is a graph of the capacitance voltage characteristics of MOS devices fabricated using the reactor of this invention;
FIG. 4 is a graph of the surface state density distribution of tungsten gate devices fabricated using this invention; and
Table 1 lists various types of plasma and non-plasma tungsten LPCVD processes which were so far developed in the reactor of this invention.
Referring to the figures which show in schematic form the reactor 8 of this invention, FIG. 1 is a schematic of the reactor and its accompanying equipment. The reactor 8 comprises a vacuum chamber 10, preferably water cooled in accordance with known technology. Inside the chamber 10, a silicon wafer 12 sits on a plurality of low thermal mass quartz pins 14. A processed side 16 of the wafer 12 is shown facing the end cone 17 of a quartz discharge tube 18 which conveys plasma from a remote microwave plasma generating cavity 20 to the vacuum chamber 10.
As shown in greater detail in FIG. 2, the preferred embodiment of the vacuum chamber 10 includes a plurality of radially spaced discharge tubes 18. The remote microwave plasma generator cavity 20, designed in accordance with the incorporated '943 application, is driven by a microwave generator 22 and controlled using a tuner and power meter 24. Tuning pins 26 are provided to control the generation of plasma in the cavity 20, which then flows through the quartz discharge tube 18 into the chamber 10. A gas injector line 28 provides a coupling from the microwave cavity 20 and the plasma injector tube 18 to a manifold and a plurality of gas sources comprising a gas distribution system 30 shown in greater detail in FIG. 2. The same gas sources provide gas to flow through a separate manifold, also shown in FIG. 2, into the vacuum chamber 10 through non-plasma gas injector port 32. At least one of these ports must be provided; a plurality of non-plasma gas injector ports 32 may be provided to ensure even gas distribution throughout the vacuum chamber. The vacuum in the chamber is maintained using a pumping system 34 designed in accordance with known technology.
Heating of the wafer 12 is accomplished by providing a plurality of tungsten-halogen lamps 36 mounted adjacent one wall of the vacuum chamber facing the rear surface 38 of the wafer 12. In a preferred embodiment, the lamps 36 are arrayed in a crosswise, overlapping fashion to insure an even distribution of the optical heating flux 40 which is shown reaching the rear surface 38 of the wafer through a water cooled quartz window 42. By following these design principles, the wafer 12 temperature can be controlled over a range from room temperature to 1150� C. for periods ranging from several seconds up to many minutes. By providing the remote microwave plasma generation, a gas distribution system 30 available through plasma and/or non-plasma ports, as shown in the preferred embodiment, the external heating source 36 conveying optical heating flux through a water cooled quartz window 42, multiple processes may be performed on a single wafer without handling the wafer or removing the wafer from one reactor to another, thereby maximizing the possibility of sequential, in situ processing. The reactor as designed enhances equipment versatility, improves process reproducibility and uniformity, increases growth and deposition rates of layers defined by the processes provided by this invention, and thereby effectively achieves in situ semiconductor multiprocessing.
The remote plasma is generated for conveyance to the vacuum chamber 10 through quartz discharge tube 18 by a microwave discharge cavity 20 operating at 2450 MHz (S band) in the preferred embodiment. In contrast to the conventional localized plasma techniques used in conventional semiconductor wafer processing, the use of this remote microwave plasma approach allows selective and controlled generation of specific plasma species simultaneously with injection of additional non-plasma gases into the process chamber without having to deal with the complications arising from the gas discharge in a composite gas ambient. The availability of remote plasma processing together with remote optical heating, the optical flux being conveyed through a water cooled window in the water cooled vacuum chamber allows low temperature dielectric growth and CVD of insulators and semiconductors. It has also allowed the development of several new processes for non-selective deposition of tungsten and its compounds (e.g., nitrides) on insulating layers for MOS gate applications. This system configuration is very flexible for in situ multiprocessing because it allows rapid cycling of ambient gases, temperature and plasma with negligible cross-contamination and process memory effects. As a result, the reactor optimizes the process designers' ability to use computer aided manufacturing (CAM) for custom VLSI circuits.
A further important feature hereof that leads to its flexibility in the process design is the gas distribution network 30 shown in detail in FIG. 2. As shown in FIG. 2, the distribution network includes three manifolds 50, 52, 54 that are connected to a plurality of gas sources in a manner schematically shown in the correction chart at the upper left of the figure. The connection chart in which the gases are shown on the vertical axis and the manifolds on the horizontal axis can be interpreted by the convention that black at an intersection indicates the existence of a connection through the indicated manifold, while white at the intersection indicates that no connection is available. The gases made available through the manifolds are clearly displayed on the top of FIG. 2, although in addition to the ones shown, available gases may include NF3, heated WC16 solid source, SiF4 and others indicated to be available by the letters X1, X2 and X3. FIG. 2 also more clearly shows the fact that in the preferred embodiment, eight discharge tubes 18, each of the same general design as that shown in FIG. 1, are connected to the vacuum chamber 10. The tubes 18 are provided in a radially regular array around the region where the silicon wafer is to be mounted, with the tubes preferably angled toward the wafer to provide an even distribution of plasma over the surface of the wafer. Microwave cavities 20 are provided at the entrance to each of the discharge tubes 18.
In a preferred embodiment, a sapphire window is provided in the central region left vacant by the regular radial spacing of the ports of the discharge tubes, this sapphire window being directly below the process top surface 16 of the wafer. An ultraviolet or laser source may be provided outside the vacuum chamber facing this window for photon enhancing processing of the wafer. Also, continuous process monitoring may be achieved through this sapphire window that faces the processed surface of the wafer. The FIG. 2 schematic also shows a single non-plasma gas injector 32, although more than one injector may be provided to achieve even gas distribution throughout the vacuum chamber.
It has been found that the reactor lends itself to several applications including the formation of thin dielectrics on silicon (plasma or non-plasma) comprising oxides (formed by rapid thermal oxidation, RTO) and nitrides (formed by rapid thermal nitridation, RTN), nitroxides (RTO/RTN) and oxynitrides (RTN/RTO) as well as formation of application specific dielectrics (e.g., RTO/ rapid thermal annealing, RTA/RTN). The process is also useful for the formation of dielectrics on germanium and galium arsenide, using plasma RTN for Ge/CMOS with germanium nitride, and plasma RTN for GaAs (surface pacification and MISFETs. The reactor is also highly useful for LPCVD of dielectrics and semiconductor epitaxy, including LPCVD of silicon nitride, oxide, and oxynitrides and epitaxy Si, Ge, and diamond.
A major use of the reactor herein is to be the formation of tungsten gates and interconnections, especially the plasma non-selective deposition of gates, the non-plasma selective deposition of contacts and interconnections, NC2 tungsten gate MOS processing and gate engineering, and plasma and non-plasma LPCVD of tungsten nitrides. As used in this application, "selective" means that the deposition of the tungsten occurs only on silicon or metal, while non-selective deposition refers to blanket deposition over the surface being worked by the tungsten.
More specifically, a critical focus of the process development effort for this reactor was to develop reliable processes for in situ fabrication of tungsten gate MOS devices. In the multiprocessing environment of this invention, this required the growth of gate dielectric by RTO and RTN cycles, followed by a non-selective tungsten deposition process to form the electrode.
A variety of selective and non-selective processes for tungsten deposition were investigated in this work. Table 1 presents a summary of the tungsten deposition processes developed using the disclosed multiprocessing reactor. These techniques are grouped based on the plasma condition and the injection mode of various ambient gases. The depositions were studied extensively in a wide range of gas flows, pressure, and substrate temperature.
When WF6 or a mixture of WF6 +H2 was injected through the non-plasma port, generation of H2 plasma, Ar plasma, or Ar+H2 plasma in the quartz tube promoted non-selective tungsten deposition on insulating surfaces. Addition of Ar to H2 enhances the plasma emission intensity and density of available atomic hydrogen, a critical facet in several processes in making it non selective. Another non-selective deposition technique developed in this work employed WF6 +Ar plasma along with non-plasma H2. Under appropriate experimental conditions none of these non-selective deposition techniques caused tungsten deposition on the chamber walls or inside the quartz tube. It should be noted that the chamber can be cleaned using plasma techniques without dismantling.
The mixture of NH3 +H2 and WF6 always resulted in non-selective deposition for both plasma and non-plasma types of processes. Moreover, the combination of N2 +H2 plasma and WF6 also resulted in non-selective metallic film deposition. The films deposited by any of the last three techniques in Table 1 (rows J, K, L) had higher resistivities compared to pure tungsten and were expected to be tungsten nitride compounds. The surface morphology and stability of the CVD tungsten nitrides were functions of the deposition technique and experimental conditions. Tungsten nitride may exhibit useful properties such as oxidation resistance, diffusion barrier, and ion implant channeling stop. Tungsten nitride films could also be formed by RTN of tungsten layers. The tungsten films nitrided at the highest temperature (1000� C. or more) were powdery; however, the films nitrided at lower temperatures (e.g., 825� C.) were stable. According to the Auger depth profiles the films nitrided at 825� C. and above were tungsten oxynitrides. Good adhesion non-selectively deposited tungsten film to insulators was obtained for tungsten films even thicker than 1 μm. In some instances, one initial tungsten deposition cycle was followed by another type of deposition in order to obtain optimal adhesion and uniformity properties.
Any combination of WF6 /H2 /Ar without plasma discharge (rows A through E in Table 1) resulted in very selective tungsten depositions only on exposed silicon areas. The selective depositions were performed in a wide range of gas flow rates, pressure, and temperature and selectivity was maintained for depositions tungsten deposition thickness well over 1 μm. Compared to a furnace, the single-wafer cold-wall reactor offers a much larger processing window for selective processes without loss of selectivity after long times at elevated temperatures as much as 450� C. SiF4 is known to retard the silicon reduction reaction of WF6. Selectivity was also preserved in a mixture of WF6 /H2 /SiF4 even at temperatures as high as 650� C. This indicated that in contrast to SiH4 (injected in prior art process work to stop selectivity), SiF4 cannot initiate non-selective tungsten deposition even at very high deposition temperatures. The mixture of H2 and SiF4 did not result in any silicon deposition at temperatures as high as 650� C.
All of the non-selective deposition techniques developed in this work are applicable to in situ fabrication of metal gate MOS devices. Various MOS devices were successfully fabricated using these techniques. As an example, FIG. 3 plots the high and low frequency capacitance-voltage (C-V) characteristics of MOS devices of an MOS device with RTMRPM-deposited tungsten gate and without any final forming gas anneal. Nearly 300 Å thick gate oxide was grown in a furnace in dry oxygen ambient at 950� C. for 60 min Ar anneal at the same temperature. In these particular devices, the initial tungsten nucleation on gate oxide was promoted by a plasma deposition process (row G in Table 1) and this cycle was followed by a non-plasma deposition cycle (row E in Table 1) to make the film thicker. As indicated by the C-V characteristics, the devices exhibit respectable performance and negligible plasma damage. The oxide thickness measured by ellipsometry (308 Å) and extracted from the C-V data (303 Å) were similar which implies that no reduction of SiO2 occurred during the initial plasma deposition cycle. Assuming negligible fixed oxide charge density, the flatband voltage value (0.54 V) indicates that the gate work function is located near the silicon midgap which is what should be expected from tungsten and should be ideal for NMOS as well as PMOS devices. The surface-state density distribution plotted in FIG. 4 shows a midgap value of 6�1010 eV-1 cm-2. This value is relatively low for an unannealed MOS device. There may have been a possibility of some hydrogen annealing during the tungsten deposition process.
In summary, this novel rapid thermal/remote microwave plasma multiprocessing technique has clear merits for in situ fabrication of future high-performance MOS VLSI circuits.
Alternatives to the reactor and the specific process disclosed herein may become apparent to a person of skill in this technology. Therefore, the scope of the invention is to be limited only by the following claims.
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text: Save The Event For Later 2014 Berryman Trail Epic Steelville, MO, Sat Oct 25, 2014 Who's Registered? | Contact Event | Event Website | Google Calendar Start line address: 204 butts rd, steelville, mo 65565, Steelville, MO 65565 Presented by Springfield Bicycle Company This is a past event. If you wish to see the details for this past event click "Continue" below. If you are looking for a current event, please search the event calendar .


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Going back to church
When I left North Carolina at age 22, I never planned to be back in a Baptist church. Years later, here I am.
In 1965, MLK asked religious leaders to come to Selma and march. Decades later, plans are taking shape in Montgomery to honor those who came.
Howard Thurman's Pilgrimage to India and the Origins of African American Nonviolence
Quinton Dixie and Peter Eisenstadt focus on the first half of Thurman's life, finding there not only the deep and complex roots of his mature works, but also a far-reaching influence on historical events and actors.
About 15 years
ago I was a guest at the annual meeting of the Association of Christians Teaching Sociology. In one session a professor reported on a
student's project. Taking the Century as a barometer of mainline Protestantism and Christianity Today as a barometer of evangelicalism, his student
compared the respective responses to the civil rights movement. The student
found that the Century was very hospitable toward the movement and that CT was critical of
it. (Full disclosure: At the time of this ACTS meeting, I was working for
Since ACTS is comprised
largely of evangelical scholars, there was some hanging of heads in the room.
Evangelicals, they agreed, had been on the wrong side of history, not to speak
of the wrong side of justice.
North Carolina churches fight for integrated schools
Years before Brown v. Board, the North Carolina Council
of Churches fought for integrated schools. Almost 75 years later, the council mobilized again for the same cause.
William Barber has a way of getting people arrested. Since he took
charge of the NAACP in North Carolina, he's been inspiring
followers—black and white—to engage in acts of civil disobedience.
Directed by Tate Taylor
In The Help, set during the civil rights era, an aspiring
journalist decides to write a book about the African-American domestics
in the small Mississippi town where she grew up. The movie, adapted by
Tate Taylor from Kathryn Stockett's best seller, is a glossy Hollywood
potboiler that uses a serious theme and historical context as cover.
The Century and civil rights
During the early 1950s, the Century's editors could hardly be classified as strategists in the war for civil rights, but they tried their hand at analysis and expressed sympathetic support for both the commanders and the ground troops.
It was the winter of 1967, and Jesse Jackson was completing his master's degree at Chicago Theological Seminary. The young Baptist minister had left his native North Carolina to attend a northern United Church of Christ school, in part, he recalls, so that he could concentrate on his studies away from his civil rights activities.
The Century's work relies primarily on subscriptions and donations. Thank you for supporting nonprofit journalism.
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fX SudirmanTwitter Statistics
@fXSudirman - Tracking since October 11, 2009
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You are on fX Sudirman's Twitter stats page
We track these Twitter stats since October 11, 2009 . You can see how many followers fX Sudirman lost or gained and what the prediction is for tomorrow or the next 15 days, together with all kinds of other stats like rank compared to all Twitter users, tweets etc.
Why don't you give it a try and compare fX Sudirman to yourself ? Or if you are fX Sudirman get even more feature rich & up-to-date stats with Premium & Pro Twitter Stats.
Twitter Counter is the #1 Twitter stats site powered by Twitter. It all started in June 12, 2008 and we grew rather rapidly because of our Twitter Counter badge. The button is a nice small image that shows your visitors how many followers you have on Twitter. Within a year the button was on many many blogs around the world and we displayed more than 100 million buttons in one month. We track follower stats for over 180 million users now.
"I just unlocked the 6-month graphs on Twitter Counter.
Find out more http://twittercounter.com/pages/you via @TheCounter #paidwithatweet"


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Our liquid Concentrated Shrimp & Crab Boil is made for boiling your favorite seafood but it can be used to give any dish some added spice.
Water, Polysorbate 80, Extractives Of: Red Pepper, Bay, Clove, Black Pepper, Thyme, Marjoram And Artificial Spice Flavors.
A capful added to a pot of boiling potatoes, corn or other vegetables gives them a spicy kick too!
Serves: Makes 4 servings.Prep time: 10 mins
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used this in moderation for a corn boil for our towns July 4th picnic. Had folks coming back for more 4-5 times!
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An absolute must for any shrimp boil. I grew up on the Mississippi Gulf Coast and this was THE seasoning found in EVERY home to use for crawfish, shrimp, and crab boils. I'm cooking some lagniappe (...a little something extra) TONIGHT for my girlfriend. This is a fantastic product! I just don't like the spice bags as well as I do this product. A little really does go a LONG WAY for about 20-24 quart pot of "Gulf Coast Cuisine".


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Brandy has settled up with the children of a woman who was killed after the singer hit her car in 2006.
Papers filed in Los Angeles County Superior Court state that Awatef Aboudihaj's two kids will each get $300,000 from Brandy, TMZ.com reports.
The singer still hasn't reached a settlement with the victims husband, Marouane Hdidou; he turned down an offer of $1.2 million back in February.
Awatef died after Brandy struck her car with a Range Rover in 2006 near the interchange L.A. freeways 405 and 101; the incident caused a four-car pile up.
Usmagazine.com reports that Brandy wasn't charged in the incident because police ruled that there wasn't enough evidence to prove she'd committed vehicular manslaughter.
– Sonya Eskridge
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What's up with Ginuwine, Brandy and Jay-Z
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You can now filter search results with text. Example: "person: john" will search only person pages for "john".
Welcome to Killville! Hope you survive the experience!...but probably you won't.
As if the Earth getting destroyed wasn't bad enough, this section of Battleworld has gone to hell...literally.
Natasha finally confronts the leader of CHAOS and does exactly what she needs to. In record time, in fact.
Character »
Ultron appears in 540 issues.
Ultron is Alkhema's creator.
In a alternate reality called Old Man Logan, she is the daughter of Clint Barton (Hawkeye) and Tonya (youngest daughter of Peter Parker, Spider-Man). During the events of Spider-Verse is officially named Spider-Girl.
Starting his super-criminal life as Power Man and then reinventing himself as the size-altering Goliath, Erik Josten has served as a member of several incarnations of the Masters of Evil and the Lethal Legion. It wasn't until he became Atlas and a founding Thunderbolts member that he truly "discovered" himself.
Black Talon derives his power from the mystic Voodoo arts. He can raise zombies and control them at will.
Originally, Count Nefaria was just an ambitious Maggia Don who hired mad scientists and super-villains. Later, he became super-powered himself. He is one of the Avengers' most powerful enemies, although not one of their most recurring.
Ultron became Daystar's Master following his transformation into a Phalanx Select.
The very mention of his name makes lesser men tremble! The brilliant scientist with the iron mask and the twisted brain! Master of science and sorcery, Victor Von Doom is the monarch of Latveria, and the eternal nemesis of the Fantastic Four!
Amora the Enchantress is an Asgardian goddess who is extremely experienced in the use of magic and is also skilled at seduction through supernatural means. She has been both an ally and an enemy to Thor, although she often chooses the latter.
Grim Reaper and Ultron have been allies against the Avengers.
Built by Ultron to be his wife, Jocasta was given the Wasp's mind, but then warned the avengers and the brain waves were removed. She retained pices of the brain waves and is an honorary avenger.
Klaw and Ultron have been allies when fighting against the Avengers.
Amalgam version of Ultron and Kobra.
Ultron is the Master of The Phalanx, Lightstorm is a Phalanx Select, therefore Lightstorm's loyalties are to Ultron and Ultron alone.
Man- Ape and Ultron have been allies at various times.
A robot created by Machinesmith who believed he was human.
Ultron and Maximus were allies during Quicksilver and Crystal's wedding.
Ultron and Melter have been allies on occasion.
Ultron and Nekra have been allies at various times.
A physically altered cheerleader rescued by Daredevil.
Oddball was a mutate able to induce psychological disorders.
Ultron and Radioactive Man have been allies at various times.
The cold and calculating hunter named Shatterax Cybernetically enhanced Kree warrior was a onetime member to the empires Starforce.
was one of the villains under his command during the 1985 incident.
In an alternate reality, The Wild Sentinel adopted Ultron as its Father just as it had adopted Danger as its Mother.
In the alternate reality of Old Man Logan,Tonya Barton-Parker is the youngest of Spider-Man's daughters, Ashley Barton's mother, and Hawkeye's third wife.
Ultron is Victor's "father". He was constructed by the robot and left with Victor's mother who attempted to hide him away from Ultron
Vision was created by Ultron. He is essentially his "father" and refers to the Vision as his 'son'.
Vision later turned out to be a good guy and helped the Avengers on numerous missions even being an Avenger for a time.
Ultron and Whirlwind have been allies at various times.
Xemnu is an alien that can bench press far in excess of 100 tons. Xemnu is an enemy of the Hulk and can mind control others to do his tasks.
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About Schools in San Carlos, TX
San Carlos offers a range of educational opportunities with one elementary school.
Contact a Coldwell Banker® real estate agent to learn more about the schools and school districts in San Carlos, TX.FIND AN AGENT
San Carlos, Texas is located in Hidalgo County. Nearby cities and towns include La Blanca, Muniz, Cesar Chavez, Elsa, Murillo, Doolittle, Edcouch, Olivarez, Edinburg, Lopezville, North Alamo, Monte Alto, Midway North, Mila Doce, La Villa, Faysville, Laguna Seca, Alamo, San Juan, Midway South, Donna, South Alamo, Weslaco, Hargill, Indian Hills, Scissors, Pharr, Villa Verde, McAllen, Llano Grande, Heidelberg, Mercedes, Palmhurst, Tierra Bonita, Grand Acres, Lasara, Santa Rosa, Ratamosa, Progreso, Yznaga, Zapata Ranch, Alton, Solis, Bixby, Progreso Lakes, La Feria North, Sebastian, West Sharyland, Mission, Hidalgo, Relampago, La Feria, La Homa, Granjeno, Lyford, Linn, Ranchette Estates, Primera, Doffing, Palmview, Palm Valley, Palmview South, Santa Maria, Citrus City, Iglesia Antigua, Las Palmas II, Combes, Perezville, Bluetown, Juarez, Raymondville, Los Angeles, Abram, Lasana, Harlingen, Penitas, and Rangerville. San Carlos is a suburban community with a population of 3,315. The median household income is $31,533. In San Carlos, 60% of residents are married, and families with children reside in 70% of the households. Half the population of San Carlos commutes 22 minutes or less to work, with 63% of residents holding white collar jobs and 37% residents holding blue collar jobs. The median age of homes in San Carlos, TX is 12 years, with 80% of those homes owned, 15% rented, and 5% not occupied.
San Carlos offers a range of educational opportunities with one elementary school.
Contact a Coldwell Banker® real estate agent to learn more about the schools and school districts in San Carlos, TX.FIND AN AGENT
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text: Quick View save 4% Paddington: The Junior Novel by HarperCollins October 20, 2014 | Trade Paperback In stock online from $6.89 When Paddington arrives in London, he''s excited to explore the city that he''s heard so much about. Thanks to a stroke of luck, he meets Mr. and Mrs. Brown at the train station. They welcome him into their home and agree to help him find the explorer who visited his family in Peru. As Paddington… See Details $7.25 / $6.89 lowest price*was $7.25


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Delta Air Lines has made a number of high-level staffing changes, including the appointment of Joanne Smith as executive vice president and chief human resources officer, effective 1 October.
The announcement comes as Delta says that Mike Campbell, current executive vice president of human resources and labor relations, will retire on 1 October.
Smith has been Delta's senior vice president of inflight service, a position in which she led 20,000 flight attendants and administrative staffers and helped develop Delta's onboard product and catering operations.
Smith has worked for the company since 2002.
Delta says Smith's position as senior vice president of inflight service will be filled by Allison Ausband, currently vice president of reservation sales.
In addition, 29-year Delta veteran Charisse Evans will be the company's new vice president of reservation sales and customer care, and Mary Loeffelholz will be vice president of ACS international operations, Delta says.


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Many nonprofit organizations are eligible to receive Microsoft software donations. The information on this page will help you understand the requirements and how to apply. If you are not eligible for a software donation, Microsoft offers several other options to receive free or discounted software and services.
Nonprofit and nongovernmental organizations must hold recognized, charitable status as defined in Canada in order to be eligible for a software donation. Eligible organizations will operate on a not-for-profit basis and have a mission to benefit the local community that could include, but is not limited to:
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Organizations that engage in discrimination in hiring, compensation, access to training, promotion, termination, and/or retirement based on race, color, sex, national origin, religion, age, disability, gender identity or expression, marital status, pregnancy, sexual orientation, political affiliation, union membership, or veteran status, other than as allowed by law, are not eligible for software donations.
The following types of organizations are not eligible for the Microsoft Software Donation Program:
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Over the past six months, your Obamacare questions have steadily piled up in my inbox. Now, "steadily" is a description I can only think back fondly on. These days, words such as "barrage" or "deluge" are more fitting.
At last count, I tallied more than 800 comments and queries. And the pace has accelerated since enrollment began on Oct. 1 for Covered California health exchange plans and the Medi-Cal expansion.
Many of you are lobbing urgent questions at me about signing up. That's why today I'm including a few I have addressed in previous columns, with some important new details that have emerged. Open enrollment is upon us, and these are answers you need to know now.
Q. Do I have to give up my Medi-Cal and sign up for Obamacare? (Dear reader, this question – and the answer below – applies to people with different kinds of insurance as well, so please read on.)
A. Bob, take your hand off that health insurance application. I repeat: Take your hand off that health insurance application.
The Affordable Care Act, aka Obamacare, requires most people to carry a minimum level of health insurance starting in January, with some limited exceptions. Those who don't comply must pay a tax penalty.
However – and this is very important – if you have Medicare or Medicaid (called Medi-Cal in California) or certain types of coverage for veterans (which I will get into in an upcoming column); if you receive health coverage through your employer; or if you purchase coverage on the open market, you comply with the requirement and won't have to pay the penalty.
So, please, Bob and others, remember that you are covered. Don't let someone talk you into buying more insurance.
Q. If I choose, say, Blue Cross during open enrollment and then in six months decide to switch carriers, will I be able to do that or do I have to stick with the carrier?
A. Sorry to say, the door to buying or switching health insurance closes after open enrollment.
As I've mentioned before, some open enrollment rules change under Obamacare. For people purchasing insurance from Covered California or on the open market, the open enrollment period for individual and family plans will last six months this first year, from Oct. 1 through March 31, 2014. In subsequent years, it will last from Oct. 15 through Dec. 7.
So, if you sign up for a health plan but have second thoughts, you can switch until the end of open enrollment, says Anne Gonzales of Covered California. However, if you've already paid your monthly premium and want to switch, you will have to quickly dis-enroll and enroll in the new plan within a certain time frame to avoid a gap in coverage, she says.
"They can drop their coverage" after open enrollment, she adds, "but then won't be able to re-enroll until the next open enrollment period."
For those of you with job-based insurance, Medi-Cal or Medicare, the open enrollment periods are different.
Q. I understand the government will subsidize health insurance plans for individuals and families if their incomes qualify. Would you please define "income?" Is it gross income, adjusted gross income or something else? Is there a line for it on IRS form 1040?


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Nvidia + Matrox TripleHead2Go with resolution 5040x1050!
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Join Date: Jul 2005
Location: Munich
Posts: 910
Re: Nvidia + Matrox TripleHead2Go with resolution 5040x1050!
Originally Posted by
I must say that the document you pointed out looks very technical at first glance. I don't know if I can understand that.
I added the link just as a reference in case you might be curious what the timing
values stand for when playing around with them. The document is in deed big,
but technically it's actually pretty simple: Assume you have an old CRT (like
an old TV). In order to build the picture, there's an electronic beam sweeping from
left to right in order to form a line of the frame and this is repeated from top
to bottom to build all lines. Now in order to tell when to start the next line or the
next frame, you need horizontal and vertical sync signals. So for example, you
might have the following timing values:
Horizontal active pixel: 1680
Horizontal sync start: 1784
Horizontal sync end: 1960
Horizontal total: 2240
Vertical active lines: 1050
Vertical sync start: 1053
Vertical sync end: 1059
Vertical Total: 1089
Pixel Clock: 146.25 MHz
sync start - active pixel = front porch (H:104, V:3)
sync end - sync start = sync width (H:176, V:6)
Horizontal Frequency = Pixel Clock / Horizontal total (65.3Khz)
Vertical Frequency = Pixel Clock / Horizontal total / Vertical Total (59.95 Hz)
So in your case, i'd first try to increase the value for "Vertical Total" in
order to hopefully fix the missing pixels on the bottom. Then you might
try to fix the pixels on the side by playing with the Horizontal front porch
and sync width. I wouldn't recommend changing the Horizontal total
because the TH2G doesn't like that (picture gets messed up).
You may also try to play with the pixel clock value (the higher, the better,
at least for the 5040x1050 mode of the TH2G).
good luck
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Malwarebytes won't open
by Donita - 4/22/09 4:46 PM
Have malwarebytes installed on my pc. For some reason it won't open. I tried running it because I noticed my google searches were being redidected. I can run Adaware but can't get any updates. Can't use System Restore because it doesn't go farther than selecting the restore point. After that clicking next does nothing happens. Can't go to the malwarebytes website or windows update, I get "page cannot be displayed". I can go to the Adaware site but when I click the link for manual update I get the same "page cannot be displayed". Tried all 3 programs in safemode only Adaware would run but still could not update.(Safemode w/networking)Type of brouser makes no difference(IE 6 or Firefox) Ran my virus scan(Eset)found 3 infections that were deleted but didn't help. Saw something on an eariler post about renaming the MB seup file but that made no difference. Hoping somone can help. Sorry for the long post.
OS-XP Professional service pack 2
AMD Athlon 3000+


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The American Society of Anesthesiologists is accredited by the Accreditation Council for Continuing Medical Education (ACCME) to provide continuing medical education for physicians.
The American Society of Anesthesiologists designates this enduring material for a maximum of 30 AMA PRA Category 1 CreditsTM per issue, for a total of 60 CME credits. Physicians should claim only the credit commensurate with the extent of their participation in the activity.
For questions, please call Member Services at (630) 912-2552 , or email firstname.lastname@example.com.


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Friday Freakout: Zoo Dive, Close Call Openings
Talk about a zoo dive. Here's a dozen skydivers on a tracking jump at the Invasion 2012 and a few of the people that fell behind get a little too close for comfort, tracking over each other — and towards each other — at break-off. The 180 opening didn't help either. Compared to this other... Watch Video »
Friday Freakout: Skydiver Hits Head HARD On Plane!
The skyvan was flying at the Invasion 2012, and this is a good example of how NOT to exit said aircraft. We call it "jumping" for a reason… because we're jumping out of planes, not casually stepping out of them. Despite how bad this looks/sounds, luckily he was wearing a helmet and he landed safely... Watch Video »
Rock Out With Your Cock Out
Just click it. Do it. Watch it. Shoes were lost, keys were lost, and they almost lost an altimeter. But you know, sometimes you just gotta rock out. With your cock out. You're welcome, ladies. Gear checks are for chumps. Disclaimer: no roosters cocks were harmed in the making of this video. Watch Video »
March Madness: World-Class Skydiving
Setting a skydiving world record requires world-class talent, which would explain all of the amazing talent that was assembled for the world record tryouts at Skydive Sebastian during March Madness. This is our first collaboration on a skydiving video, so HUGE thanks to WIDSIX for the edit and STF Block Party for the footage. Stay... Watch Video »
The Block Party Invasion
A collection of all the zoomy jumps, sequentials, and big ways from STF Block Party XP (formerly STF 4Loko) at the 2011-2012 Skydive Sebastian Invasion. Watch Video »
The Wingsuit Invasion
If you haven't been to the biggest New Year's skydiving boogie in Florida, you need to get down to Skydive Sebastian for the Invasion this year. It's one party you don't want to miss. This is a shot of Patrick Everson, Richard Parkin and William Onieal on a wingsuit flock at the 2011 Invasion. Photo... View Photo »


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Due to popular demand, the experts at BD have put together an eBook exclusively dedicated to seed bead projects! Download this free eBook and begin working on free bead patterns that will help you explore your creativity. Discover new bead weaving patterns like the triple spiral roping technique. Expand your knowledge on the beadwork essentials, like the peyote and brick stitches. Show off your creative abilities when using up to four techniques to create one beaded necklace. Now is your chance to learn a variety of seed bead designs, just download these free beaded patterns today. Get out your beading needles and download this free eBook now.
It's time to discover new beadwork techniques! In this free eBook you will brush up on essential beading stitches, while also learning brand new techniques. Download this eBook today and receive five free beading patterns that will help you explore your bead weaving abilities.
Along with this FREE beadwork techniques eBook, you'll also receive a free membership to our community. Your membership provides you access to our free bead patterns library, our beading community blogs, and our daily email newsletter with all sorts of tips, tricks and more free projects!
Best seed bead stitches and beadwork techniques inside!
With your free jewelry making tutorial, you'll make beautiful beaded jewelry pieces that are sure to get noticed.
Gift Box Necklace
by Lauren Gross
After being inspired by a netted box she saw in a beading magazine, Lauren Gross set out to construct a beaded box without making six separate sides. The solution came to her in a dream: easy-to-weave cubes composed of two peyote-stitched strips. Gross then decided to create a beading pattern that could best show off her new inspiration. Using the essential beadwork techniques, like the flat peyote stitch and wireworking, this free beading pattern will push your beadwork skills to the next level. Make as many peyote-stitched cubes as you want to go on your "Gift Box Necklace". Be elaborate with nine or simple with one. Just follow the step by step instructions and you are sure to have a rewarding end result with this bead pattern. Download this free eBook now and start creating some very unique seed bead designs today.
Fresh Twist
by Doris Coghill
You'll love this "Fresh Twist" necklace design Doris Coghill has created. It is the perfect Beadwork pattern because it incorporates various beading stitches to create one beautiful masterpiece. The twisted herringbone tube is the main attraction in this beading pattern. Each color used in the tube is accented to perfection because of the simple twist throughout. The beading stitches used in this seed beading pattern are the ladder stitch, the tubular herringbone stitch and the classic peyote stitch. Combining all of these beading stitches allows for a very intricate finished product.
Crystal Radiance Brooch
design by Marcella Austenfeld
Sumptuous Spiral
by Nancy Sathre-Vogel
Classic Beadwork designs are often explored and redesigned in new and exciting ways. This is what Nancy Sathre-Vogel has done. She fell in love with double spiral the first time she saw it. Then she started thinking, "Why stop there? What about triple spiral? Where is the limit?" Her explorations led to this stunning version of a triple spiral, which is a challenging stitch that is well worth it! The bead weaving techniques used in this free beading pattern are the flat peyote stitch, spiral rope, stringing and crimping. Seed beading is taken to a whole new level in this bead pattern from Nancy Sathre-Vogel.
Snow Fairy Bracelet
by Tatiana Van Iten
Stretch your beadwork abilities! In this free bead pattern you will find a one of a kind bracelet that will take your beadwork skills to an entirely new level of fun! Using the right-angle weave technique, along with the flat peyote stitch, the square stitch and fringe, you can create an icy, elegant bracelet. This embellished right-angle weave technique has unlimited possibilities, and it can be varied depending on your creative abilities and desires. This free beading pattern has detailed step by step directions, a materials list and tools needed to complete the beading pattern.
Download this free eBook now and get a variety of seed bead projects to start working on. Learn to create beautiful seed bead designs, while also learning new techniques that can expand your beadwork abilities.
Free bead patterns are available to you now. Claim your eBook today and download five free beaded jewelry patterns that you can start beading today. All of these beading patterns use different beading stitches. Each stitch is used in unique ways, which will take you to the next level with all your essential beadwork techniques.
With your free jewelry making patterns, you'll also become a valued member of the community and receive:
*For your convenience, you may use your sign in information to access the Interweave family of communities: Artist Daily, Cloth Paper Scissors, Crochet Me, Knitting Daily, Jewelry Making Daily, Quilting Arts, Weaving Today, Sew Daily and Spinning Daily. Your email address is safe. Interweave will not sell, rent, or disclose your email address to third parties.


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Ashutosh Gowariker's Amrapali is a remake of yesteryear flick with the same title. Vimala Raman will play a title role, which was played by Vyjayanthimala Bali. Late actor Sunil Dutt had played protagonist and now Salman Khan is said to have been approached to do the lead role.
The story is based on a courtesan of Vaishali, the capital of the Licchavism which was ruled by the king of the Magadha empire, Ajatashatru.


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Items affiliated to " Morocco"
Group by: No Grouping | Authors | Refereed | Document Language | EPrint Type
Jump to: Conference paper, poster, etc.
Number of items at this level: 2.
Conference paper, poster, etc.
AZIM, Khalid; OUYIHYA, Khalid ; AMELLOUK, Aomar; PERISSOL, Claude; THAMI ALAMI, Imane and SOUDI, Brahim (2014) Dynamic composting optimization through C/N ratio variation as a startup parameter. In: Rahmann, G. and Aksoy, U. (Eds.) Building Organic Bridges, Johann Heinrich von Thünen-Institut, Braunschweig, Germany, 3, Thuenen Report, no. 20, pp. 787-790.
EL JIATI, Abdelazize (2008) A non-chemical method for monitoring adult olive weevil populations in Tadla-Azilal plain in Morocco. Paper at: IFOAM OWC 2008, Modena, Italy, 18-20 June 2008. [Submitted]
This list was generated on Sun May 24 11:13:23 2015 CEST.


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|A to Z | Popular | Random | Origins
CallenRate Callen: Do you like this name?
Get creative with Callen | Add to list (0)
Meaning and name origin
Callen \c(al)-len\ as a girl's name is of Scottish origin, and the meaning of Callen is "rock". Callen is a variant of Callan (Scottish): also from an Irish surname derived from Cathan.
Callen has 2 variant forms: Calynn, Kallan.
Callen is not a popular first name for females but a very popular surname or last name for all people (#6408 out of 88799) (2000 U.S. Census).
Displayed below is the baby name popularity of the name Callen for girls (2015 statistics).
Similar Names
Callen is also pronounced similarly to Caelan, Caelin, Caelyn, Caileen, Cailen, Cailene, Cailin, Cailyn, Caleen, Calen, Calin, Calyn, Cayleen, Caylen, Caylin, Caylyn, Coleen, Colleen, Collene, Kaleen, Kalen, Kaylen and Kellen. Other suggested similar baby names are Caleena, Callee, Calley, Carlen, Carllen, Collena and Fallen. These names tend to be more commonly used than Callen.
© 2015 Think Baby Names
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Enforcement of a U.S. or international judgment in Canada requires expert knowledge of Canadian law and procedure.
Courts in Ontario, Canada, which includes the Greater Toronto Area, are receptive to the enforcement of final and conclusive foreign money judgments is subject to certain statutory exceptions and procedural requirements. This article explains the law and procedure applicable in Canada, with emphasis on the Province of Ontario, where one-third of Canada's population resides.
The authors are business litigation and arbitration lawyers in Toronto, Canada. This article is an excerpt of a chapter of which they are authors which comprehensively deals with the law of enforcement of foreign money judgments in Canada.
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As specialists in retractable awnings, we encourage you to research all the features of retractable awnings before you buy. Learn why we offer the best retractable awnings or setup a free consultation now.
Take a closer look at Mr. Cover All Retractable Awnings.About Retractable Awnings
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On Wed, Apr 11, 2012 at 05:19:33PM +0100, Daniel P. Berrange wrote: > The concept of 'default usb controllers' seems very policy based > to me & different hypervisors will have different views of this. > > So IMHO we should not add this API I'm fine with dropping the patch. My feeling was that this API had a bit too much policy in it, but that it can be quite helpful. I guess now I have to replace it with actual API documentation for GVirConfigDomainControllerUsb so that people know they should not copy&paste all of what is done in the test program. Christophe
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Star Tracks
Hemsworth rolls up on set in Philadelphia. Plus: Sandra Bullock, Hilary & Luca, Katy Perry and more
Credit: Gilbert Carrasquillo/Splash News Online
Updated: Friday Dec 14, 2012 | 06:00 AM EST
More from PEOPLE
Latest News!
- Lawrence of Arabia Star Omar Sharif Is Suffering from Alzheimer's, Says Son
- Read the Cover Story – Tess Holliday: The World's First Size 22 Supermodel!
- What Happened When Ray Liotta and Christopher Walken Sat Next to Each Other on a Flight?
- Never Hear 'You Look Tired' Again – Thanks to This Beauty Product
- Police Recover Body in Hudson River Near Where Kayaker Disappeared


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Professionals in the city across various backgrounds, including engineering and social service, are coming together to gather resources to provide small loans to the needy.
Also called small-ticket or micro loans and ranging between Rs 5,000-20,000, such amounts are crucial for people who find it tough to access bank loans to start their own little enterprises like beauty parlours, or tailoring shops; or to meet personal needs like health and education.
Ian Correa, CEO of Hope Foundation is looking at giving interest free loans between Rs 5,000-10,000 to needy women.
"We know of people in Bangalore who want to start their own idli stalls or saree shops and require micro loans of just a few thousands. Once given the necessary support, these people can go on to earn a decent income and living," says Correa, adding that they would start giving such loans within the next few months in Bangalore.
"Some of our borrowers have used the loans to start businesses like papad making, constructing bird cages, handicraft business, potato chips business," says Smita Ram, who along with techie Ram NK started Rang De to give micro loans at reasonable interest rates.
JP Nagar-based Rangan Varadan, who quit his Infosys job to start the social enterprise MicroGraam, is looking at giving small loans to villagers near Haveri, Bagalkot, Belgaum, Rannebennur; who would include farmers, small entrepreneurs and poor students.
Experts say if the needy find it tough to access loans, they end up going to moneylenders who charge exorbitant interest, forcing them to take more loans to repay earlier ones and end up in the vicious cycle.
Experts say they tie up with local NGOs and identify people in need of small loans and those who are credit worthy.
"Local NGOs have a strong bonding with people, and this helps in building trust and confidence, making it easier for us to reach out to them," says Varadan.
Both MicroGraam and Rang De have targets of reaching out to several thousand borrowers, about 95% of whom will be women, "with the loans helping in income generating activities and in sustaining themselves and their families."
"We disbursed loans worth Rs 8 crore in 2013. This year we are looking giving loans worth Rs 15 crore," says Smitha.
Professionals are looking for contributions from individuals wanting to give any amount and foundations to assist them expand their reach.
Lending scene looks up
A report by the Microfinance Institutions Network (MFIN) states that disbursal of micro loans increased by 50% in 2012-13, compared to the previous financial year. Containing analysis of data from 42 microfinance companies in India, the report says average micro loan amount across India is Rs 15,000. And lending in states like Uttarakhand, Uttar Pradesh, Punjab and Rajasthan has significantly increased over the years.


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OOh, I like these kinds of threads!
Grey Wolf:
Arctic Fox:
Arctic Wolf:
My personal favorite, Canadian Lynx:
Historic Stone Arch Bridge, Minneapolis, MN:
OOh, I like these kinds of threads!
Grey Wolf:
Arctic Fox:
Arctic Wolf:
My personal favorite, Canadian Lynx:
Historic Stone Arch Bridge, Minneapolis, MN:
All of the animals I posted above are real, live wild animals but raised by humans.
There is a place about 90 miles North of the Twin Cities area here in Minnesota called "Minnesota Wildlife Connection." They raise animals for both photographic opportunities as well as educational opportunities.
There has been some negativity in the news surrounding the owner and his couple of lapses in judgement. But he really is a nice guy and all the tree-hugging, PETA-loving activists can go take a hike! They've never met Lee and have no idea what a great guy he really is.
But I digress... What Lee does is allow us photographers the opportunity to photograph animals in their habitats in a safe surrounding. He has a large parcel of land with several excellent habitats to photograph from. The animals are never chained nor harmed. There are no fences. We and the animals are free to move about.
Ah, I knew the name rang a bell Josh.....United States Department of Agriculture is seeking to revoke his exhibitor license. Not sure if there is an outcome yet.Originally Posted by josh.p., post: 250909
FLORIDA VIDEOS HERE.... https://www.youtube.com/user/isafari...?feature=watch
Originally Posted by josh.p., post: 250909No outcome yet. I'm actually slated to go on another photography shoot in late May.Originally Posted by Isafari, post: 250911
Two sides to every story and unfortunately, the only story out there is one perpetuated by the activists.
Should the bear hunt have happened, maybe not - especially not on State Park land.
That issue aside, Lee has been a great guy and takes very good care of his animals, from what I've seen on my two trips to his land. And I have numerous friends who've also spent many photography trips on his property.
I'm going to keep my mouth shut after this post as I'm passionate on the subject and would hate to offend anyone but IMO 'being a nice guy' just doesn't cut it- If you own something like this 'reserve' (although I'm more inclined to call it a hunting ground) your life and soul should be put into the up keep of these animals. That bear had a serious dental problem and instead of spending money on repairing it he allowed someone pay a lot of money (around $5k off the top of my head) to STAGE a killing of the bear as though it was a wild animal in a wild setting, when in fact it was in an enclosed area and the bear was tame- I remember the pictures of it being hand fed!Originally Posted by JStrickPhoto, post: 250912
Could you imagine letting someone do that to your dog/whatever pet you have? I don't see this as taking good care of his animals. I see it as using them almost like cattle in the meat trade, "If treatment is not economically viable; kill them." Part of caring for any animal, be it a pet snake, a dog, a cat or raising an animal to show it, is to do the right thing and treat medical conditions appropriately, or in extreme circumstances, HUMANE euthanasia. To me it seems like rather than spend money he's seen the opportunity to make money- the cost of which was the bear's life.
I know there are two sides to every story but it would have to be a pretty substantial 'other side' for me to over look that kind of foul play.


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The wake-up light wakes you up in a natural way, by light that increases gradually. From now on, waking up will be a pleasant experience. it makes use of a halogen lamp to wake you gently.
- Choice of FM radio or 2 natural and pleasant wake-up sounds
- Results in as little as 15-45 minutes a day.
- Safe, UV-free
Additional Specifications
Multi Pack Indicator No
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Model No. HF3470/60
Shipping Weight (in pounds) 3.7
Product in Inches (L x W x H) 7.67 x 7.52 x 11.81
Assembled in Country of Origin USA or Imported
Origin of Components USA or Imported
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- 2 year
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- 2 year


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Mon-Fri: 7am-1am EST / Sat-Sun: 7am-11pm EST
ApplianceWestinghouse Washer
Level of DifficultyEasy
Time to do repair30 - 60 mins
Age of Appliance5 - 10 years
NutdriverScrew driversSocket set
10 out of 12 people found this instruction helpful
Tipped washer over on to the front side. Removed back panel. Removed the flex coupling to the water pump. Removed the old belt. Installed the new belt and reversed the process to put components back together.
Help other customers find the most helpful instructions.
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The Group's assets include industry leaders, such as Metalloinvest, a leading global producer and supplier of high added-value metals and mining products; MegaFon, one of the most dynamic global telecommunications operators and the top mobile data and advanced mobile services provider in Russia; Mail.Ru Group, the Russian internet and social network leader; and UTH Russia, a leading media enterprise that comprises Disney Russia, Muz-TV and U television channels.
USM Holdings was established in 2012 to streamline and consolidate Alisher Usmanov's various projects, which are the result of over 20 years of illustrious entrepreneurial and business development activities.
Bringing together Mr. Usmanov's interests into one Group, USM is structured to facilitate the sharing of both intellectual and financial capital amongst its various companies. The Group's companies benefit from a global network of relationships and a wealth of experience, which enable them to access investment opportunities both in Russia and internationally. The efficient reporting system and high transparency levels of USM Holdings' companies are in line with international standards of corporate governance.
In carrying out its operations, USM Holdings acts in a socially responsible way, investing in long-term sustainable enterprises, stimulating economic development and creating employment opportunities in Russia. The Group cares about the communities in which it conducts its business, and supports them through a wide range of social projects in the fields of education, sports, arts, science and ecology.
The main shareholders of USM are Alisher Usmanov, Vladimir Skoch and Farhad Moshiri.


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Marietta Street
Marietta Street is a historic street in Downtown Atlanta. The street leads from Atlanta towards the town of Marietta, as its name indicates. It begins as one of the five streets intersecting at Five Points, leading northwest, forming the southern border of Downtown's Fairlie-Poplar district, continuing through Downtown's Luckie Marietta district, then entering West Midtown's Marietta Street Artery neighborhood, until terminating at its junction with West Marietta St., Brady Ave., and 8th St.
Marietta street is one of the original seven streets in Atlanta, along with Decatur, Whitehall, Peachtree, Pryor, Loyd (now Central), and Alabama.[1]
Before the American Civil War, the finest residences were located on both sides of Marietta Street, extending westwards from Five Points for about a mile.[2] In the first years of the 20th century, several of the city's tallest skyscrapers were built on Marietta Street, and a concentration of financial companies were headquartered on the street, such as the Third and Fourth National Banks of Atlanta, and later, the Atlanta Trust Company and Citizens & Southern National Bank.
Notable buildings and sites, from Five Points northwestwards, include:
- Georgia State University's Andrew Young School of Policy Studies, formerly the Fourth National Bank (built 1905, 2—4 Marietta St.)
- The Metropolitan (Atlanta condominium building), formerly the Third National Bank (built 1911, 20 Marietta St.)
- J. Mack Robinson College of Business Administration Building, formerly known as the Empire Building, then the C&S Bank Building (built 1901, 35 Broad St., siding onto Marietta)
- Five Points Plaza (built 1964, 40 Marietta St.)
- 55 Marietta Street, formerly the Fulton National Bank, then Bank South; tallest building in the city 1958-1961[3]
- Henry W. Grady statue in the median just northwest of Forsyth Street
- Walton Place building (built 1907, 75 Marietta St.)
- Centennial Tower (built 1975, 101 Marietta St.)
- State Bar of Georgia Building (built 1918, expanded 1920 and 1922, 104 Marietta St.)
- CNN Center
- Centennial Olympic Park
Notable buildings no longer standing include:
- Norcross Building (4 Marietta St. - current location of the Andrew Young School of Policy Studies
- 48 Marietta St. (NE corner of Forsyth St.), where President Woodrow Wilson had his law offices starting in 1881[4](building demolished, site currently occupied by 56 Marietta St. building)
- 55 Marietta St. was the site of the United States Post Office and Customs House (built 1878), which served from 1910-1930 as City Hall (demolished 1930s)[5]
See also Marietta Street Artery for notable industrial architecture in the northern reaches of Marietta Street.
External links[edit]
- 1920 photo of Marietta Street on Atlanta Time Machine
- ^ Pioneer Citizens' History of Atlanta, 1833-1902, Pioneer citizens' society (pub.), p.20
- ^ History of Atlanta, Georgia, Wallace Putnam Reed (ed.), 1889
- ^ "Fulton National Bank". Atlanta Time Machine. 3 February 2009. Retrieved 30 January 2011.
- ^ Atlanta and Environs: A Chronicle of Its People and Events, 1880s-1930s, Franklin M. Garrett, p.48
- ^ Excerpts from Atlanta and Environs: A Chronicle of Its People and Events: Vol. 1: 1820s-1870s, Franklin Miller Garrett


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Great little scheme. On the HB screen, you can also do a block and release with the HB. A lot of times it throws the D off when you do that. Just watch out for heat. If they come, be prepared to hit the slant as the hot read.
HB Counter (base play)
WR Screen (quick pass audible)
PA FL Stretch (PA audible)
HB Dive (run audible)
HB Counter-
Simply follow your blockers. Great run play. I like to motion the TE on the left to the right for better blocking.
Really easy to confuse your opponent by flipping the run and motioning.
WR Screen (makeshift HB Screen)- this play can be deadly
Streak X
Block B to the left
Put RB on an out to the left
Slant A
Look to hit your running back right when he cuts since there won't be much time in the pocket. There will be great blocking set up from the hot routes
PA FL Stretch-
Put A on a zig/whip route
Streak Y
Fade B
Put RB to flats
If they are in man look to the TE running the zig but hit him when he cuts to the middle of the field not after he cuts to the sideline. Look for your other TE for a pass lead in or out against zone.
HB Dive-
Just a simple run play. If there aren't many in the box then this is the play to run.
That's it for now guys, try this out and leave some feedback, thanks.
Great little scheme. On the HB screen, you can also do a block and release with the HB. A lot of times it throws the D off when you do that. Just watch out for heat. If they come, be prepared to hit the slant as the hot read.
This is good stuff. I LOVE this formation. You can have so many different looks by flipping the play so that one play becomes two. You can flip a pass play and the defense won't catch on to your reads nearly as easy. Also, the motion of a te to the run side on an outside run is deadly once or twice a game. Inside runs seem to be money for me if they are not blitzing.
What playbook can I find this formation in?
MaddenMayhem4 (01-25-2013)
Love this formation
Still waiting on which playbook...anyone help?
I just cant run from singlebqck this year, but I am gonna give this scheme a shot
The key to running from singleback is to either have enough tes to block the run or to spread the defense out.
For example, singleback 4 wr formations easy eight yard gains if you run it up the middle (of course, you can only do this once or twice before the defense figures it out and pinches the line or stacks the box).
This is a simple spread concept. You make the defense take defenders out of the box to cover recievers. If they do, you can run, since there are five blockers and five men in the box. If they don't then you have a great machup on the recievers.
For me, if I run 2 back sets in the same game I run singleback, running lanes never seem to open up, since the defence is ready for the run. The key is to play very balanced and playing pass first. Then running lanes will open.