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Jimmy C. Newman Passes Away; Stream New Lund, Lauderdale Albums; New Music Videos
- The Grand Ole Opry ranks dropped by one with the passing with the grand Cajun, Jimmy C. Newman, from cancer at the age of 86. Marty Stuart summed it up best with his comment in the obit Peter Cooper wrote for The Tennessean: "His role became the Cajun fellow at the Opry, and that's great. But if you go back to his 1950s recordings of 'Cry, Cry, Darling' and 'Seasons of My Heart,' you'll witness a country music architect at work. He was a brilliant singer, a brilliant designer of country music."
- Speaking of Peter Cooper, he makes a semi-serious pitch for an all-Nashville radio station: "Immediately, this station would be a sensation. Two-thirds of the city would listen out of sheer ego, since two-thirds of us either record music or gripe about how the Powers That Be don't understand they should be recording our music. Tourists would listen because the station would be a soundtrack to the Music City they've come to experience."
- Take it with a grain of salt since it's TMZ, but reports are coming out that Randy Travis still doesn't have his speech back after the stroke and other health ailments he suffered last year.
- Corb Lund's Counterfeit Blues, Old Crow Medicine Show's Remedy, and Jim Lauderdale's I'm a Song are streaming at NPR.
- Australia's CMC interviewed The Mastersons about their new album, Good Luck Charm.
- Jennifer Nettles and Carrie Underwood performed "9 to 5" together on the Grand Ole Opry stage.
- Sturgill Simpson is going to join Zac Brown Band for a handful of tour dates this summer. (via press release)
- Stephen Deusner interviewed NRBQ about their new album, Brass Tacks.
- Stevie Wonder came in at No. 26 on CMT's All-Time Top 40: Artists Choice, a list of the most influential artists in history as chosen by country stars themselves.
- The sedulous C.M. Wilcox posted another Quotable Country feature.
- Drake White is the second act signed to the new Dot Records roster.
- Miranda Lambert is on the cover of the final issue of Ladies' Home Journal.
- Texas band Green River Ordinance is releasing The Collection: Live & Unplugged this week. Here's a teaser they posted on YouTube.
- Bluegrass duo The Spinney Brothers are finishing up a new album.
- Brad Paisley unveiled the artwork for his upcoming album, Moonshine in the Trunk.
- The Texas Music Scene filmed Ray Wylie Hubbard driving around his old stomping grounds and telling old "road stories."
- Luke Bryan's Pittsburgh concert generated over a hundred 911 calls and quite possibly the best video of a drunk guy that has ever been recorded.
- Hank Williams III isn't happy that Tom Hiddleston will be playing his grandfather in an upcoming biopic.
- Jana Kramer on her upcoming sophomore album: "It's been two years. I'm completely ready for them to hear new songs. I'm excited because I'm proud of the stuff that is going to be on this next album. We've been playing some of it out there, and the fans really helped me choose what wound up making the album. If they didn't like it, we'd scratch it, and try another. It's going to be coming out in August or September."
- New music videos and notable live performances from the past week or so:
Rodney Crowell – "Famous Last Words of a Fool in Love"
The Old 97's – "Let's Get Drunk & Get It On"
Lady Antebellum – "Bartender"
Ben Rue – "I Can't Wait (Be My Wife)"
Sturgill Simpson – "The Promise"
The Seldom Scene – "Little Georgia Rose" (Live on WAMU Bluegrass Country)
Asleep at the Wheel – "Boogie Back to Texas" (Live on Texas Music Scene)
Adam Hood – "He Did" (Live at KOKE Studios)
John Berry – "Thunder Road"
Jon Pardi – "What I Can't Put Down"
Amy Rose – "Country Crazy"
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Current Discussion
- Paige: Oh damn. :( I never commented here and I haven't been listening to any music at all since Thanksgiving (it …
- Dave W.: Just read the news here. Will miss E145 very much - love this site. All the best to you Juli …
- Leeann Ward: Oh, dang! This is real. Farewell to the most generous, informative, quality, intelligent, consistent, ethical country music blog! You …
- bll: Thanks Juli for all the great articles and information; you'll be missed by me and I suss several others. Best …
- Both Kinds of Music: I hope people appreciate the irony that one of the best "Americana" albums is titled Metamodern Sounds in COUNTRY Music.
- Barry Mazor: I would not rule out that possibility..There's a different set of voters involved..
- Dana M: Does anyone else think that Brandy Clark actually has a good chance of winning since this isn't a country awards …
- Juli Thanki: UPDATE: Brandy Clark got a Best New Artist nom. BEST AMERICANA ALBUM: Rosanne Cash -- The River & The Thread John Hiatt -- Terms …
- luckyoldsun: Glenn Campbell is great and I'd love to see him get an award, but the words of that song may …
- Casey Penn: Juli, it was an honor to write for you here on Engine145.com. You're good at what you do, and The …


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getting pregnant
Boosting Your Fertility This Spring
Spring -- a season which nature celebrates birth! Now is a great time for you to join in by boosting your fertility this spring!
Your Blood Type Might Affect Your Fertility
It's not just vampires that are interested in your blood type. Your ovaries are, too! Certain blood types might affect a woman's fertility.
Trying to Get Pregnant? Brush and Floss!
Keeping your dental health in check can help you get pregnant faster and keep that baby cooking longer.
A little about me and my situation
So my husband and I have been trying to get pregnant for 8 very long (to me) months now. I was on birth control pills for 6 years prior to stopping and then we waited 5 months afterward before we actually started trying. I have fairly regular periods although they are between 33-35 days rather than the "normal" 28 days.
Does Soy and Soy Products Negatively Affect Fertility and Preconception Time?
This question might be interesting for vegans consuming soy products, and generally people who eat soy and are trying to conceive a baby.
Connection between soy and infertility or decreased fertility is somehow cemented in my mind, I am not sure why, but there must be a reason, right?
So, I decided to make a little "research", and in this article I have listed the main premises I have learned. I hope you will enjoy reading it, and perhaps learn something new.
Pamela's Journey
It's amazing that I have spent most of my life trying NOT to get pregnant. I thought since my mom was one of thirteen kids and I'm one of five that my genetic chances of conceiving were pretty good. Last year I decided to go off of birth control and my period stopped coming as well. I am in the military and I deployed to Iraq in September of last year. Before the deployment I took birth control again because I was getting anthrax shots and was scared of getting pregnant and injuring my unborn child. I got my period just like any regular girl would.
So I've been reading on a few websites on and off today at work. Mostly about fertility and getting pregnant after you go off the pill. I put 9 books on hold at the library! One for my hubby and one that I'm expecially excited for, "What to Expect Before You're Expecting". I've also been reading all about pregnancy! The blogs, FAQ's, and websites are full of all kinds of information. Some of it breaks my heart to read about these wonderful women who want nothing more than to have a family. It makes me thing of how my mom must have felt. She and my father tried for 10 years to have children.
Here Goes Nothing!
My husband and I have been married for almost a year and a half. We've decided that it's time to bring a baby into our family! We have a wonderful 4 1/2 year old yellow lab, but we've been feeling like something's missing. (How cliche does that sound?) I went to the OB for my yearly check-up a few weeks ago and got the 'ok' to go off the pill. I have two weeks left of my pack and I'm starting to get NERVOUS! A zillion thoughts have been running through my head, "Are we too young? Are we being stupid? What if something goes wrong? What if we can't get pregnant? Is our apartment too small?
The Pregnancy Partners: Blokes, Babies and You
As moms-to-be (or those still trying to become one), there are a few basics that we would love to have from our partners. Learn how you can achieve these goals as you meet the Pregnancy Partners -- our "Blokes, Babies, and You" team!

subset: commoncrawl


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Decorate your classroom in trendsetting fashion with our NEW Isabella Collection!
From décor to storage and much much more, coordinating designs and cute colors cover everything necessary to transform your classroom into a creative environment. Chic patterns include the latest looks of chevron, quatrefoil, polka dots, and stripes to spruce up any space.
Our original designs, vivid colors, and cute characters make even hall passes a fun part of the day! Stock up on your favorite theme, or gather one of each design and let students pick their favorite option.
|Weight (lb)
|Width (in)
|Length (in)
|Collection Name
Retrieving reviews...
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Reviews submitted to Mardel.com are moderated. Acceptable review will appear on the site in 3-5 days. Thank you


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Package: buffycli (0.4.1-1) [universe]
Links for buffycli
Ubuntu Resources:
Download Source Package buffycli:
Please consider filing a bug or asking a question via Launchpad before contacting the maintainer directly.
Original Maintainers (usually from Debian):
- Penny Leach
- martin f. krafft
It should generally not be necessary for users to contact the original maintainer.
Similar packages:
a text mode alternative to Buffy
buffycli displays a compact summary of your mail folders in text-mode, and allows to invoke a command (usually a mail reader) on them. It is written with the intent of being a handy everyday tool for people handling large volumes of mail. For mutt users, this can be a nice front-end to supplement the simple built-in folder browser when one has many folders to keep track of. It tries hard to work out of the box: it looks for mail folders in sensible places and comes with reasonable defaults.
buffycli uses the same backend as Buffy, but it outputs text to the terminal, rather than a GUI window. It is thus suitable to be used over SSH links, and fits nicely with window managers that are primarily used to organise terminals.
The program is functional but still very young, and only Maildir and Mailbox format are supported at the moment.
Other Packages Related to buffycli
- dep: libbuffy-perl (>= 0.5)
- Perl wrapper for the libbuffy library
- dep: libtext-formattable-perl
- Perl module to format text tables
- dep: libtie-ixhash-perl
- ordered associative arrays for Perl
- dep: perl
- Larry Wall's Practical Extraction and Report Language
- dep: procps
- /proc file system utilities
- sug: mutt
- text-based mailreader supporting MIME, GPG, PGP and threading
- sug: offlineimap
- IMAP/Maildir synchronization and reader support
Download buffycli
|Package Size
|Installed Size
|10.6 kB
|92.0 kB
|[list of files]


text:
Insinkerator SS-500-12B-MS DescriptionSKU: 023-SS50012BMS
Complete Disposer Package, with 12" diameter bowl, 6-5/8" diameter inlet, with sleeve guard and splash baffle, 5 HP motor, s/s construction, includes siphon breaker, solenoid valve, flow control valve, manual switch, single direction. 208V/3PH. Other voltages are available at no charge. Other options available for an additional charge-Please see spec sheet for details.
Insinkerator SS-500-12B-MS SpecificationsPDF Spec Sheet


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My name is Andrea----but please, call me ANNE...no one calls me Andrea...
I love to spin, crochet, weave, punch needle, do locker hooking & naalbinding, am learning and getting better at needle felting, and just to stay up with the "joneses-knitters" loom or rake knitting...cannot use needles, have some minor paralysis in my left hand. I can't use the middle, ring nor the pinkie finger on that hand, so needle knitting has been frustrating, so I switched to loom knitting. I've always been more comfortable with crochet, and I know how to change a pattern from knitting to crochet with it looking just as nice. And I know natural knitters who couldn't tell what I loom knitted next to the same item done on needles...soooo-
But first and foremost I am a wife, mother and a mommy to THE MOST Wonderful little Affenspinscher pup, now 2 1/2 yrs old, named Ruby, and she is my little GEM!!!
My honey, Paul and I have lived together for about 24+ years and we have a 21 yr old, beautiful, talented, intellegent daughter, Stephani...I may be a little biased, but that's my right as her mother....but she has made either Dean's List or President's list in college consistently... lol
If anyone needs fiber email me at firstname.lastname@example.com being a fiber (w)hor(e)der...lol, I have pounds and pounds... I hate to sell it, because each purchase was carefully thought out, but if anyone is in need and funds are short, just email or call me on my cell 484-529-4597. All I ask is that you pay the shipping, which I can tell you in advance.
I have an etsy store AnniesArtifacting, but it wasn't a great success in the beginning... I'm hopefully going to kill two birds with one stone with my etsy store-I need to clean out my craft room, and do a major destash of anything NOT fiber related. It's my New Year's resolution to get this done before my birthday on Jan. 15th
OH-and I want to start my own blog about being an artist and craft person and handicapped too. I am permanently disabled due to a brain and spinal cord injury, and my condition is debilitating...or getting worse...lol -and my numerous medications for chronic pain and fibromyalgia make me sleepy a lot of the time.
Blessings to all artists and crafters!!! Let's keep up the HOME MADE ways to pass down to future generations!!!
© 2015 F+W All rights reserved.Use of this site signifies your agreement to the Terms and Privacy Policy, updated March 2007


text:
Atalanta insist striker Matias Ezequiel Schelotto is not for sale.
The attacker has been linked with a move away this summer.
"Schelotto will remain in Bergamo," Franco Zavaglia told Itasportpress. "There is nothing to suggest anything else.
"Obviously anything can happen with the transfer market being open, but at the moment he will be at the disposal of boss Stefano Calantuono for next term."
The 22-year-old has been on Atalanta's books since 2009, but he has yet to play for the club after loans spells at Cesena and then Catania.
"I've heard nothing from Catania regarding a return to them for the player," concluded the representative.


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Nice weather blamed for spike in crashes
Updated: 03/25/2010 - Police expect more crashes when weather goes from bad to good.
Updated: 03/25/2010 - Police expect more crashes when weather goes from bad to good.
Updated: 03/25/2010 - A Corbin teen was arrested Sunday night after police found a meth lab in a backpack.
Posted: 03/24/2010 - Investigators have more questions than answers about what led to the deaths of two people inside a Bell County home.
Posted: 03/24/2010 - More than two thoroughbreds die a day from injuries at North American racetracks, according to early results from a monitoring system launched amid the high-profile deaths of Barbaro and Eight Belles.
Posted: 03/24/2010 - A bill aimed at cracking down on the problem of teenagers sending nude photos via cell phones or online has taken a step back in the Kentucky General Assembly.
Updated: 03/25/2010 - As lawsuits over Toyota acceleration problems multiply, more than 150 attorneys gathered to sharpen their legal tools Wednesday .
Updated: 03/25/2010 - A Kentucky nanny is being hailed a hero for saving a 5-year old boy from his burning home.
Updated: 03/24/2010 - Fans who are braving the cold weather in New York, were close enough to see their favorite players in action at today's open practice.
Updated: 03/24/2010 - Consideration of the budget bill is expected to enter a conference committee with a final vote expected next week.
Updated: 03/24/2010 - The goal is to stop kids from smoking before they start.
Updated: 03/25/2010 - Two down, four to go! The basketball wildcats gear up for the Sweet Sixteen, taking on Cornell Thursday night in Syracuse.
Updated: 03/24/2010 - Versailles Police say a man got away with some money after the robbery at Bypass Liquors Tuesday night.
Updated: 03/24/2010 - Weatherman Dave Price, a Cornell graduate, is picking the Big Red to beat the Big Blue in Thursday night's game in Syracuse.
Updated: 03/24/2010 - As interest continues to grow in the CATS and Coach Cal, Keeneland officials say they are changing the way they will distribute tickets to have the commemorative Maker's Mark bottle signed by Coach Cal.
Updated: 03/24/2010 - The games in the East Regional are expected to bring millions of dollars to the city. UK plays Cornell at the Carrier Dome Thursday night.
Updated: 03/24/2010 - 27-year-old Labrin Johnson is charged with two counts of assault following Tuesday afternoon's shooting on Osage Court in Lexington.
Updated: 03/24/2010 - The independent Postal Regulatory Commission has now been asked for an opinion on dropping Saturday mail delivery.
Updated: 03/24/2010 - The accident happened Wednesday morning in front of Georgetown Community Hospital.
Posted: 03/24/2010 - Trey Grayson's campaign announced the endorsement Wednesday. Former Vice Presidential candidate Sarah Palin has endorsed Grayson's opponent in the Republican primary, Rand Paul.
Updated: 03/24/2010 - The money will be used to study switchgrass as a possible source of energy. Governor Beshear says half of the money comes from federal stimulus funds.
Updated: 03/25/2010 - More than 1 million baby slings made by Infantino are being recalled because the products have been linked to three infant deaths.
Posted: 03/24/2010 - There are claims linking the slings to three infant deaths.
Updated: 03/24/2010 - The two men walked away from the Career Development Center in Frankfort late Tuesday night.
Updated: 03/24/2010 - Prosecutors say John Coon and three other former Blue Grass Airport managers misspent millions of dollars of the airport's money.
Posted: 03/23/2010 - Late Tuesday night, a man was arrested in Nashville for taking his 5-year old daughter, whom he did not have custody from a home in Corbin.


text:
Obituaries: 08.01.09
CORPUS CHRISTI - The news department publishes obituaries free of charge on a space-available basis as a service to Caller-Times readers. The Caller-Times accepts obituaries only from funeral homes.
Alton R. Bishop
ROCKPORT — Alton Ray Bishop died July 29, 2009. He was 81.
Services will be at 2 p.m. Aug. 1 at Charlie Marshall Funeral Home. Burial will be in Rockport Cemetery.
Martha A. Dunn
PORT ARANSAS — Martha Anna Dunn died July 30, 2009. She was 80.
Memorial services will be at a later date.
Charlie Marshall Funeral Home
Jordan N. Hernandez
Jordan Nathaniel Hernandez died July 26, 2009. He was 2 1/2 weeks old.
Mass will be celebrated at 10 a.m. Aug. 1 at Immaculate Conception Catholic Church in Gregory. Burial will be in Gregory Cemetery.
Maria Jasso
Maria Jasso died July 25, 2009. She was 66.
Services will be at 10 a.m. Aug. 1 at Seaside Funeral Home. Entombment will be in Seaside Memorial Park.
Seferino C. Lopez Jr.
KINGSVILLE — Seferino "Chacho" Lopez Jr. died July 29, 2009. He was 70.
Religious services will be at 7:30 p.m. Aug. 2 at Ramirez-Salinas Funeral Home. Funeral services will be at 10 a.m. Aug. 3 at Ramirez-Salinas Funeral Home. Burial will be in Santa Gertrudis Memorial Cemetery.
Vickie L. Moffitt
PORT ARANSAS — Vickie Lynn White Moffitt died July 29, 2009. She was 45.
Memorial services will be at a later date.
Charlie Marshall Funeral Home, Aransas Pass
Robbie M. Session
Robbie Mae Session died July 27, 2009. She was 81.
Services will be at 1 p.m. Aug. 3 at St. Matthew Baptist Church.
Kingsville Memorial Funeral Home
Subscribe to the Caller-Times
Need Help? Call us at 1-800-566-8098.
Monday-Friday: 5am-8pm / Saturday: 7am-12pm / Sunday: 6am-1pm


text:
Total Time:
Serves: 23
Advertisement - Continue Reading Below
- 2.50 c. all-purpose flour
- 2.50 tsp. ground ginger
- 1.50 tsp. ground cinnamon
- 0.50 tsp. ground nutmeg
- 0.50 tsp. baking soda
- 0.25 tsp. ground cloves
- 0.25 tsp. kosher salt
- 0.50 c. unsalted butter
- 0.50 c. firmly packed dark brown sugar
- 1 large egg
- 0.25 c. molasses
- 1.50 tsp. pure vanilla extract
- 1 c. bittersweet chocolate chips
- 1 package cream cheese
- 1 c. marshmallow cream (such as Marshmallow Fluff)
- Large red nonpareils or red mini candies, for decorating
- 3 1/2-in. gingerbread man cookie cutters
- In a large bowl, whisk together the flour, ginger, cinnamon, nutmeg, baking soda, cloves and salt.
- Using an electric mixer, beat the butter and sugar in a large bowl until light and fluffy, about 3 minutes. Beat in the egg, molasses and vanilla. Reduce the mixer speed to low and gradually add the flour mixture, mixing until just incorporated (the dough will be soft).
- Shape the dough into four 1-in.-thick disks and roll each between 2 sheets of wax paper to 1/8-in. thick. Refrigerate until firm, about 30 minutes.
- Heat oven to 350°F. Line baking sheets with parchment paper. Using floured gingerbread man cutters, cut out cookies. Place on the prepared baking sheets, spacing them 1 in. apart. Reroll, chill and cut the scraps.
- Bake, rotating the positions of the pans halfway through, until the cookies are set and the edges are beginning to brown, 10 to 12 minutes. Let cool on the sheet for 3 minutes, then transfer to a wire rack to cool completely.
- Meanwhile, melt the chocolate chips in microwave according to package directions. Spread 1 tsp melted chocolate onto the flat side of half of the cookies. Place, chocolate-side up, on baking sheet and refrigerate until just set, about 10 minutes.
- Using an electric mixer, beat the cream cheese and marshmallow cream in a large bowl until fluffy, about 2 minutes. Spread a rounded tsp marshmallow filling onto the flat side of remaining cookies. Sandwich with the chocolate-sided cookies and refrigerate until set, about 20 minutes.
- Transfer the remaining marshmallow filling to a pastry bag fitted with a writing tip (or a resealable bag; snip off the corner). Decorate as desired with the remaining filling and red nonpareils.


text:
Adhesion of a copper film, such as a copper interconnect, to a substrate underlayer, such as a substrate diffusion barrier, is enhanced with adhesion promotion techniques. The adhesion promotion techniques can repair the interface of the copper film and the substrate to enhance adhesion of the copper film for high-yield formation of inlaid copper metal lines and plugs. For instance, thermal annealing of a seed layer, including a copper seed layer, an alloy seed layer or a reactant seed layer, can repair contamination at the interface of the seed layer and the substrate. Alternatively, the adhesion promotion techniques can avoid contamination of the interface by depositing an inert seed layer, such as a noble (e.g., platinum) or passivated metal seed layer, or by depositing the seed layer under predetermined conditions that minimize contamination of the interface, and then depositing a bulk copper layer under predetermined conditions that maximize throughput. Alternatively, the adhesion promotion techniques can avoid the formation of an interface by graduated deposition of a first material and copper.
1. A method for forming a copper film on a substrate having a barrier, the method comprising the steps of:
depositing a seed layer on the substrate barrier by a chemical-vapor deposition process using a seed layer precursor; and
deposition a copper bulk layer on the seed layer by a metal-organic chemical-vapor deposition process using a bulk layer precursor.
2. The method according to
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depositing a copper seed layer with the seed layer precursor; and
directing an ion beam at the copper seed layer to promote mixing of the seed layer and the substrate barrier.
23. The method according to
sputter etching the substrate;
depositing a copper seed layer with the seed layer precursor; and
annealing the copper seed layer.
24. The method according to
depositing a copper seed layer with the seed layer precursor; and
annealing the copper seed layer.
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39. A method for forming a copper interconnect on a substrate diffusion barrier, the method comprising the steps of:
depositing a first material on the barrier to form an interface between the barrier and the copper interconnect;
thermally annealing the first material; and
depositing the copper interconnect layer on the first material.
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depositing a catalytic material in the substrate barrier; and
depositing a copper layer on the catalytic material.
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53. A method for forming a copper film on a substrate, the method comprising the steps of:
depositing a first material on the substrate at a first deposition rate;
depositing copper on the substrate simultaneously with the first material, the first material and copper forming a graded transition layer;
decreasing the first deposition rate of the first material to zero; and
depositing copper on the substrate to form a copper layer over the graded transition layer.
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67. The method according to claims 66 wherein the second precursor comprises an hfac-free precursor.
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69. A method for forming a copper film on a substrate having a barrier, the method comprising the steps of:
depositing a platinum seed layer on the substrate barrier; and
depositing the copper film on the platinum seed layer.
70. The method according to
71. The method according to
The fabrication of electronic devices on semiconductor substrates, such as ultra large scale integration (ULSI) device fabrication, has resulted in integrated circuit (IC) chips having substantial miniaturization of electronic device dimensions. Conventional aluminum/silicon oxide (Al/SiO2) interconnect architectures have proven inadequate to meet the demand for higher interconnect performance (e.g., IC speed and reliability lifetime) needed to support increasingly miniaturized electronic device fabrication with higher chip integrated densities. To support further miniaturization, industry has chosen copper metalization to replace aluminum.
Copper offers a number of important advantages associated with higher interconnect performance. For instance, copper can increase interconnect performance by reducing interconnect propagation delays and cross talk, and by enabling higher metalization current densities than are available with aluminum. In addition, copper offers reliability and cost advantages in the manufacturing of electronic devices. For instance, when combined with low-k dielectrics, copper's superior electromigratior performance and lower resistivity reduces the number of metalization levels needed for a given IC chip. This reduction in the number of metalization levels results in reduced manufacturing cost and/or increased yield.
A number of deposition methods allow for the deposition of copper on a substrate, including electrochemical deposition or plating, Physical-Vapor Deposition (PVD), and Metal-Organic Chemical-Vapor Deposition (MOCVD)). Plating deposits copper by creating a charge potential between a copper-containing electrochemical bath and the substrate. Although plating can deposit copper films having adequate characteristics to support interconnect functions on a substrate, plating requires additional equipment for deposition of barrier and other layers on the substrate. Moreover, electrochemical deposition (ECD) methods produce significant amounts of wet chemical waste requiring expensive disposal. These additional requirements increase manufacturing cost and complexity. By comparison, PVD and MOCVD advantageously allow clustering of copper deposition with barrier deposition and preclean processes, such as with process module reaction chambers clustered around a vacuum-integrated cluster tool available from CVC, Inc. The capability for fully vacuum-integrated deposition of the diffusion barrier and copper layers onto semiconductor substrates makes a MOCVD-based option very attractive due to the reduced complexity of the deposition process sequence and the greater equipment productivity.
Copper deposition with MOCVD provides a number of additional advantages compared with to ECD and PVD. For instance, MOCVD-deposited copper used to form integrated plugs and metal lines has excellent gap-fill characteristics at a low thermal budget, such as less than 250� C., making MOCVD deposition of copper compatible with single and dual damascene processing and compatible with low-k polymer dielectrics. The resulting interconnect architectures provide low metal resistivity, reduced interconnect propagation delay and cross-talks, and good electromigration lifetime characteristics.
Although MOCVD copper deposition can form high-quality copper films to act as integrated circuit conductive interconnects, the films frequently have poor adhesion to underlying diffusion barrier layers. Poor adhesion between the copper film and the underlying barrier is attributed to interface contamination that is formed during conventional MOCVD copper processes using commonly available precursors. The interfacial contaminates which can have a detrimental impact on copper film adhesion include carbon and fluorine, both present in common copper MOCVD precursors. A copper film formed with conventional MOCVD to interface with a substrate barrier layer frequently fails to pass the scribe plus tape pull test, and can separate from the barrier during chemical-mechanical polishing (CMP) processes used to form inlaid conductive copper plugs and metal lines. The scribe plus tape test is accomplished by physically scribing a tick-tac-toe design in the copper film and then attempting to lift the copper film from the barrier layer with a tape pull. If a copper film has adequate adhesion to the barrier layer, the tape pull force will not lift the film from the barrier. In contrast, failure to pass the scribe plus tape test indicates that the copper film has inadequate adhesion to the barrier layer, and that the process used for the deposition of the copper film will not support large scale commercial production of chips having copper interconnects.
Therefore a need has arisen for a method that deposits a copper film having good adhesion to an underlying layer.
A further need exist for a method that supports deposition of copper films with vacuum-deposition equipment that is compatible with the equipment used to deposit other films on the substrate.
A further need exist for a method that supports the deposition of copper films with reduced complexity and high reliability.
A further need exist for a method that will support a high-throughput fabrication of semiconductor integrated circuit, having copper interconnects.
In accordance with the present invention a method is provided that substantially eliminates or reduces disadvantages and problems associated with previously developed methods for depositing copper films on substrates.
A first material is deposited on the substrate to form an interface with an underlying layer associated with the substrate and to act as a seed layer for the copper layer. The seed layer is deposited to have good adhesion to the underlying layer of the substrate, such as the diffusion barrier of the substrate. The copper layer is then deposited on the seed layer to form the copper film on the substrate, such as the copper film that forms a copper interconnect. The first material forms a seed layer by using deposition according to first predetermined conditions that optimize adhesion of the seed layer to the underlying layer of the substrate. The copper layer is deposited on the seed layer according to second predetermined conditions, such as conditions that will optimize properties and maximize the throughput available for deposition of a copper bulk layer. For instance, the seed layer thickness can range from 50 to 500 angstroms depending on the adhesion enhancement method, and the bulk layer thickness can range from 200 to 15,000 angstroms.
One predetermined condition for depositing the seed layer is depositing the first material onto a substrate barrier to form an interface or a buffer layer between the barrier and the bulk copper layer that forms the copper interconnect, but to anneal the first material before deposition of the bulk copper layer. The first material can comprise a generally thin layer of copper that is thermally annealed at a predetermined temperature for a predetermined time. Thermal annealing promotes diffusion of copper into the barrier for atom-to-atom bonding and disassociates or displaces the contaminates associated with the interface (typically carbon, fluorine, and/or oxygen).
Alternatively, the first material can be an inert material that will have minimal reactivity with the precursor used to deposit copper (making it difficult for the precursor contaminants to get adsorbed on the surface). For instance, noble metals, such as platinum or iridium, are inert to contaminates associated with the MOCVD process, thus avoiding contamination of the interface during MOCVD deposition of copper. Similarly, passivated metals, such as tantalum nitride, titanium nitride, TaOxNy and TiOxNy can be used as the first material.
Alternatively, the first material can be a catalytic material, such as chromium, tin, zinc, titanium or tungsten, that alloys with copper at a relatively low temperature, and a generally thin layer of copper deposited on the catalytic layer. The catalytic material and copper are then annealed at a temperature adequate to promote alloying and interfacial bonding for excellent copper adhesion. The alloy provides good adhesion and good crystal structure to support deposition of a bulk copper layer.
Alternatively, the first material can comprise a reactant layer, such as amorphous silicon or germanium, and a generally thin layer of copper deposited on the reactant layer. The reactant layer and copper are then annealed at a temperature adequate to promote a chemical reaction (e.g. silicide or germanide) resulting in a seed layer having good adhesion and microstructural crystallinity. For instance, amorphous silicon and the thin copper layer form a copper silicide seed layer.
In one alternative embodiment the substrate surface is etched at moderate power settings before the deposition of the first material to enhance adhesion of the first material to the substrate. Etching the surface enhances surface area, promoting adhesion.
In another alternative embodiment the interface formed by the deposition of the first material is intermixed with the substrate barrier by the application of a high energy ion beam to the interface.
In another embodiment the seed layer comprises copper deposited with chemical-vapor deposition by using a precursor that minimizes contaminates, or using vaporization of deposition conditions that minimize the formation of contaminants at the interface, thus, enhancing adhesion of the copper seed layer to the substrate. The bulk copper layer is then deposited using chemical-vapor deposition methods that optimize other properties and maximize throughput with the deposition of copper at an optimal rate.
In one alternative method the seed layer is CuX composite where X is a metal other than copper. The seed layer is formed on a substrate by depositing a first material on the substrate at a first deposition rate using chemical-vapor deposition and a precursor associated with the first material (X). Copper is then simultaneously deposited (co-deposited) using chemical-vapor deposition and a precursor associated with copper. The deposition rate of the first material is gradually reduced to zero, while the deposition rate of the copper is gradually increased from zero to a greater copper deposition rate. The deposition of copper is then continued until either a seed layer is deposited or the bulk copper layer is fully deposited. The first material can comprise aluminum, chromium, tantalum nitride, W, WNx, WSix or other compatible materials that can be co-deposited with copper but that are deposited by means of a precursor that does not react with the copper precursor in the gas phase. This method advantageously avoids the formation of an abrupt interface between the substrate barrier and the copper interconnect layer by promoting intermixing and formation of a graded transition layer during the deposition process.
The present invention provides many important technical advantages. For instance, the method according to the present invention deposits a seed layer that has good adhesion with the underlying layer of the substrate. The bulk layer of copper can then be deposited on the seed layer to ensure that the copper interconnect will have good adhesion to the substrate throughout the entire semiconductor chip fabrication process flow.
Another technical advantage of the present invention is that it reduces the fabrication process complexity and types of equipment needed to deposit a copper film layer. For instance, the method according to the present invention allows deposition of a copper layer with good adhesion using chemical-vapor deposition (such as metal-organic chemical-vapor deposition or MOCVD) equipment compatible with the deposition of other materials on the substrate.
Another technical advantage of the present invention is that it reduces the complexity of the deposition of the copper layer by promoting the copper layer adhesion in reaction chambers that are compatible with vacuum-integrated cluster equipment. The reduced complexity and enhanced controllability of the deposition process with cluster equipment increases the reliability of the process.
Another important technical advantage of the present invention is that it allows increased throughput for the commercial production of semiconductor chips having copper interconnects. The use of existing chemical-vapor deposition process chambers and cluster equipment without substantial increases in the processing steps increases the manufacturing capacity and throughput.
Another technical advantage is that these methods are suitable and scalable to small feature sizes of high aspect ratio structures such as those that are commonly encountered in advanced interconnects.
A more complete understanding of the present invention and advantages thereof may be acquired by referring to the following description taken in conjunction with the accompanying drawings in which like reference numbers indicate like features and wherein:
FIG. 1 depicts a side view of a chemical-vapor deposition chamber;
FIG. 2 depicts a side view of a copper interconnect layer deposited on the barrier of a substrate;
FIG. 3 depicts a block diagram summarizing adhesion promotion techniques that avoid contamination of the interface, and otherwise promote copper layer adhesion;
FIG. 4 depicts a flow diagram of steps for depositing a copper layer on a substrate;
FIG. 5 depicts a flow diagram of steps for depositing a copper layer on a substrate with first and second precursors; and
FIG. 6 depicts a flow diagram of steps for depositing a copper layer on a substrate with graduated deposition.
Preferred embodiments of the present invention are illustrated in the Figures, like numeral being used to refer to like and corresponding parts of the various drawings.
Chemical-vapor deposition (CVD) is a well-established method of depositing a material layer on a substrate in support of the fabrication of an electronic device such as a semiconductor IC on the substrate. Referring now to FIG. 1, a typical chemical-vapor deposition reaction chamber 10 is depicted. A substrate wafer chuck 12 supports a substrate wafer 14 proximate to a showerhead 16. Wafer handling port 18 can cooperate with a cluster hub to support automatic handling of the substrate among different reaction chamber process modules. Vacuum port 20 cooperates with vacuum pump components to evacuate chemical-vapor deposition reaction chamber 10, thus establishing a low-pressure processing environment and an even flow of gases from showerhead 16 over substrate 14 and through vacuum port 20.
To deposit a material layer on a substrate with chemical-vapor deposition, a gaseous precursor flows from showerhead 16 across substrate wafer 14 and exits chemical-vapor deposition reaction chamber 10 through vacuum port 20. As the precursor flows over substrate or wafer 14, the precursor undergoes a chemical reaction resulting in deposition of a material film on substrate 14. The type of material deposited and quality of the film deposited can be controlled by controlling the environment in the chemical-vapor deposition reaction chamber in accordance with the characteristics of the precursor.
Referring now to FIG. 2, a multi-layer structure that can be formed with chemical-vapor deposition is depicted. Substrate 14 has a barrier layer 22 deposited on it. Typical barrier layers include barriers formed with tantalum and tantalum nitride, TiN, WNx, or ternary barriers by using conventional chemical-vapor deposition or other deposition techniques. A copper interconnect layer 24 is deposited on top of the underlying barrier layer 22.
Conventional semiconductor chips used aluminum interconnected layers instead of the copper interconnect layer depicted by FIG. 2. The introduction of copper interconnect layers offers a number of advantages for miniaturization as well as performance and reliability improvement of semiconductor integrated circuits. The difficulty of using a copper interconnect layer 24 using a chemical-vapor deposition process lies with the relatively poor adhesion between copper interconnect layer 24 and barrier layer 22 (thus, making it difficult to form inlaid copper interconnect structures using a chemical-mechanical polishing or CMP process). When an interface 26 exists between copper interconnect layer 24 and barrier layer 22, the interface 26 can degrade the adhesion strength of copper interconnect layer 24 to barrier layer 22. This poor adhesion of the copper interconnect layer 24 to the barrier layer 22 has limited the commercial usefulness of copper interconnects for semiconductor integrated circuits because of poor manufacturability of copper deposition, particularly using the known MOCVD methods.
Metal-organic chemical-vapor deposition (MOCVD) is one promising emerging technology for mainstream applications including ultra-large-scale integrated (ULSI) circuit chip fabrication. In particular, CUPRASELECT [Cu(I)(hfac)(tmvs)] is a promising volatile liquid precursor for MOCVD. Suitable MOCVD precursors such as Cu(I)(hfac)(tmvs) deposit copper onto a substrate surface by associating the copper with hexafluoro-acetyle-acetonate (hfac) ligands that bond with copper atoms. The "hfac" ligands release the copper atoms for deposition onto the substrate during chemical-vapor deposition (CVD) when certain predetermined temperature and flow conditions are met. However, some of the "hfac" ligands may be liberated during vaporization of the precursor. Barrier 22 can extract "hfac" ligands from the precursor during the initial stages of deposition resulting in contamination (such as with carbon, oxygen, and fluorine atoms), degraded cleanliness of interface 26 and poor adhesion of the deposited copper to the diffusion barrier.
Another factor that can effect the quality of the adhesion of an MOCVD-based copper film 24 to a barrier 22 is the nucleation delay associated with the deposition of copper from the precursor. The early stages of MOCVD copper deposition are critical to achieve a textured copper film with uniform grain size distribution, good adhesion, and void/free filling. A high nuclei density and minimum initial nuclei size during the early stages of copper film growth (typically corresponding to a relatively short incubation time) provide a continuous film having good crystallanity. The minimum initial nuclei size can be quantitatively expressed as the product of the deposition rate and the nucleation delay. The greater the nucleation delay, the less likely that MOCVD copper deposition will result in repeatable adhesion of the deposited copper to the underlying barrier.
To obtain good adhesion of a copper layer 24 to a barrier 22 one key factor is to reduce nucleation delay, particularly during the early stages of MOCVD copper deposition (so-called incubation time). Nucleation delay depends on process conditions, the type of underlayer, and surface treatment, and can be minimized with an optimal combination of precursor flow, substrate temperature, and carrier gas flow. Although nucleation delay is relatively invariant with pressure and barrier type, it does approach zero when deposition is started on a clean copper surface. Thus, although nucleation delay can be reduced through a proper choice of process conditions, good adhesion of a copper layer to an underlying substrate layer can best be achieved by depositing the bulk amount of the copper layer onto a copper containing seed layer or another suitable material layer that has good adhesion to the underlying barrier layer.
To establish a seed layer with good adhesion to the underlying layer, a number of adhesion promotion techniques can be used according to this invention. These adhesion promotion techniques seek to establish strong atom-to-atom bonding between copper layer 24 and barrier layer 22 at interface 26. If interface 26 is a copper containing seed layer having good bonding to barrier 22, then the deposition of a bulk layer of copper on the seed layer will result in good adhesion between the bulk layer and the seed layer at interface 26. To achieve good adhesion, the adhesion promotion techniques repair interface 26, avoid contamination of interface 26 is during initial deposition, or avoid the formation of interface 26 altogether. Each of these options are described with reference to FIGS. 3-6 below.
Referring now to FIG. 3, a block diagram depicts alternative adhesion promotion techniques that can enhance and improve the repeatability of good adhesion of copper layer 24 to barrier layer 22. One adhesion promotion technique, represented by the repair interface block 30, assumes poor adhesion at interface 26, and seeks to repair interface 26 to create a seed layer for supporting a bulk copper deposition with good adhesion to the seed layer. Poor adhesion at interface 26 can be caused by oxygen, carbon, flourine and other contamination that is a consequence of the mechanism for copper deposition from copper (I) precursors such as Cu(I)(hfac)(tmvs).
To repair or reduce contamination at interface 26, a thermal anneal, as depicted at block 32 may be used. As depicted by block 34, thermal annealing can enhance interface 26 adhesion to barrier 22 by promoting diffusion of a copper seed at interface 26 with barrier 22 and by disassociating or displacing contamination associated with the copper seed. Alternatively, as depicted by block 36, thermal annealing can enhance interface adhesion by alloying copper with an underlying alloying material at interface 26. Alternatively, as depicted by block 38, thermal annealing can enhance interface adhesion by chemically reacting copper at interface 26 with a reactant underlayer in order to form a copper compound transition layer.
Block 40 depicts that repair of the interface can involve various treatments to the surface of barrier 22 to enhance the surface area of barrier 22 for accepting deposited copper with good adhesion. One method, depicted by block 42, involves exposing interface 26 to an energetic ion beam to promote intermixing of interface 26 and barrier 22, resulting in improved atom-to-atom bonding. An alternative treatment, depicted by block 44, involves sputter etching of barrier 22 before deposition of a seed layer to form interface 26. Sputter etching of barrier 22 roughens its surface (and may also change the stoichiometry of the barrier layer at its surface to make it more reactive or more easily alloyable with copper), thus providing greater surface area for atom-to-atom bonding with interface 26. The improved bonding available with sputter etching of barrier 22 can, for instance, reduce the need for extensive thermal annealing to establish adequate adhesion for accepting deposition of a bulk copper layer.
A second type of adhesion promotion technique is to avoid contamination at interface 26, as depicted by block 50. Contamination of interface 26 can be avoided by depositing interface 26 with precursors having firmly bonded "hfac" ligands, as depicted by block 52. The available precursors, depicted by blocks 54, 56 and 58, can establish a seed layer with minimal contamination, but are not optimal precursors for the deposition of a bulk copper layer (due to the higher resistivity of copper deposited by these alternative precursors). Thus, once a seed copper layer is deposited as interface 26 using a suitable precursor, an alternative precursor such as CUPRASELECT can be used to deposit the bulk copper layer 24 to form the copper interconnect lines and plugs.
Another adhesion promotion technique that avoids interface contamination is the deposition of an underlayer at interface 26 to establish a seed layer, followed by the bulk deposition of copper, as depicted by block 60. Block 62 depicts that copper or other noble metals, preferably noble metals such as platinum or palladium or iridium, can form a seed layer inert to precursor ligands which will support the deposition of a bulk layer with good adhesion. Block 64 depicts that a passivated metal such as titanium nitride or tantalum nitride can be used as the seed layer. Alternatively, the passivated metal can comprise metal oxynitrides such as TiOx Ny or TaOx Ny deposited at interface 26 to form a seed layer. The passivated metal minimizes reactions with ligands used to deposit the bulk copper layer. Passivated metals can embed contaminants within barrier 22 to minimize the effect of the contaminants on interface 26 and adhesion of the bulk copper layer 24.
Block 70 depicts other viable approaches for copper adhesion promotion. One alternative approach, depicted at block 72, is to avoid the formation of an interface at barrier 22. As indicated at block 74, graduated chemical-vapor deposition (CVD) of copper can promote intermixing of copper with barrier 22 using simultaneous deposition (co-deposition) of an adhesion promotion material and copper. For instance, block 76, 78 and 80, depict that aluminum, chromium, tantalum nitride, W, WNx, and WSix are materials available for simultaneous chemical-vapor deposition with copper that can promote a well-bonded seed layer with good intermixing on which a bulk copper layer can be deposited.
Other adhesion promotion approaches can, as depicted by block 82, involve modification of the reaction at the surface of barrier 22. For instance, as depicted by block 84, the use of DC-bias, gas additives, ultraviolet light or UV, PECVD, H-atom, and hfac desorption and removal can each modify surface reactions to promote adhesion of copper to barrier 22.
The adhesion promotion techniques depicted by the block diagram of FIG. 3 can be used individually and in combination with each other to promote adhesion of a copper layer to a substrate or to an underlying barrier layer no a substrate. A combination of techniques can be selected according to the characteristics of the copper layer to be formed and the characteristics of the underlayer on which the copper layer is formed.
Referring now to FIG. 4, some potential steps are depicted that combine a number of adhesion promotion techniques for the deposition of copper on a substrate. From start 100 the substrate is prepared for treatment in a reaction or substrate processing chamber. At step 102, the substrate is optionally sputter etched at medium power to roughen up and modify the surface of the barrier layer (or the surface of a dielectric layer) that will accept the copper layer. Sputter etching involves plasma treatment of the barrier surface in an inert, such as argon, or chemically reducing, such as argon/hydrogen, ambient. An example of a moderate power setting is etching at 200 watts in six mTorr of argon for sixty seconds. Substantially higher or lower power levels will reduce the effectiveness of sputter etching due to either insufficient or excessive etch and roughening of the barrier surface.
The roughening of the barrier surface by sputter etching provides additional barrier surface area for adhesion of subsequent copper layers. Although sputter etching is generally inadequate to ensure good adhesion of a subsequent copper layer on a repeatable basis, sputter etching will reduce the thermal budget needed with a post-deposition thermal anneal for a given set of deposition conditions. This reduced thermal budget requirements can ensure compatibility of MOCVD copper deposition techniques with low-K polymer dielectrics. Thus, although sputter etching is not needed for adhesion promotion, it can be added as a step to enhance the effectiveness of other adhesion promotion techniques.
At step 104, a determination is made regarding whether to add an additional adhesion promotion material to the substrate. One "yes" determination can lead to the deposition of an inert adhesion promotion material that avoids interface contamination. For instance, at step 106, a generally thin layer of a noble or passivated metal such as platinum, meaning a layer of between approximately 5 and 300 angstroms thick, is deposited on the barrier of the substrate to act as a seed layer or adhesion promoter layer to accept a copper bulk layer. The noble metal, such as platinum or palladium or iridium, and the passivated metals, such as titanium nitride or tantalum nitride, are inert or minimally reactive with the ligands used in MOCVD copper deposition. The inert underlayer formed by the noble metal or passivated metal supports MOCVD copper deposition with minimal nucleation delay and helps enhance adhesion of the deposited copper bulk layer by avoiding the adsorption/chemisorption of contaminants from the ligands by the barrier and by embedding any contaminants that are absorbed within the barrier instead of the interface. The noble or passivated metals can be deposited using conventional techniques, including CVD, MOCVD, PVD, and plating (preferably by CVD or MOCVD). Once the inert underlayer is deposited to form a seed layer for the copper bulk layer, MOCVD can proceed immediately, or, alternatively, additional adhesion promotion techniques can be accomplished, as depicted by step 111.
Alternatively, if the determination at step 104 is a "yes", then, as depicted at step 108 a reactant or a catalyst layer can be deposited on the barrier. One reactant material is amorphous silicon. Some examples of catalyst materials are chromium, zinc, tin, and tungsten. The reactant and catalyst materials can be deposited on the barrier surface by conventional means, including CVD, MOCVD, PVD and plating (preferably by CVD or MOCVD or PECVD).
At step 110 a generally thin copper layer is deposited onto the substrate. In select cases, particularly such as with deposition of a noble metal such as platinum, the entire copper deposition (initial nucleation/seed copper plus the bulk copper layer) can be deposited without a need for an interim thermal anneal process 112, thus, simplifying the adhesion improvement process. Step 111 depicts a determination of whether to proceed with a thermal anneal at step 112 or to proceed directly to bulk copper deposition at step 116. If the determination at step 104 is no, the thin copper layer at step 110 is deposited directly onto barrier 22. If a reactant or catalyst material was deposited at step 108, then the thin copper layer is deposited on top of the reactant material underlayer or catalyst material underlayer. The thickness of the generally thin copper layer at step 110 can vary dependent upon the characteristics of the deposition process; however, a film of approximately 500 angstroms or less (preferably in the range of 100 Å to 500 Å is generally desirable. The reactant or catalyst underlayer, if applied, is also generally thin having a thickness between approximately 5 to 200 angstroms. The generally thin copper layer and any underlying layer are intended to form a seed layer at the interface of the barrier that will support growth of a high quality copper bulk layer.
At step 112 the substrate with the seed layer is subjected to thermal annealing (as described before, some methods such as platinum seed may not need the thermal annealing step). Generally, annealing of the seed layer involves heating the substrate to a temperature of 250� C. to 400� C. for one to ten minutes in an inert ambient, such as argon. If the seed layer is copper on a reactant material such as amorphous silicon or germanium, the annealing will form copper silicide or copper germanide having good adhesion to the substrate and barrier due to the fused bonded interface.
If, at step 112, the seed layer is copper on a catalyst material such as chromium or tin, the annealing will result in formation of an alloy having good adhesion to the substrate barrier. Tin and chromium each have a high wettability for copper and can easily alloy under thermal annealing conditions. The alloy formed by annealing establishes a good seed layer with good substrate adhesion and minimum contamination. For instance, tin and chromium can be deposited by co-sputtering with the barrier, by using an alloy target, or by CVD or MOCVD or PECVD having a tin or chromium precursor. Barrier engineering, such as selecting a barrier with alpha tantalum, alpha tantalum nitride, beta tantalum, or beta tantalum nitride, can effect the adhesion of the catalytic material to the barrier.
If the seed layer is only copper deposited on the barrier, thermal annealing can enhance the adhesion of the copper to the barrier by disassociating and/or displacing (diffusing) the contaminants associated with the interface of the generally thin copper layer and the substrate barrier. In addition, thermal annealing promotes diffusion of copper into the substrate barrier to give atom-to-atom bonding of the copper with the barrier material.
The effectiveness of thermal annealing for the establishment of a seed layer with good adhesion depends upon the annealing temperature, the annealing time, and the copper seed thickness. The following Table 1 shows the dependence of adhesion (as measured by scribe and tape pull test) of a 500 angstrom CVD copper seed layer deposited on a c-PVD tantalum and c-PVD tantalum nitride barrier:
As depicted by Table 1, an anneal time of 4 minutes at 370� C. will result in a seed layer that passes the scribe plus tape test for adhesion.
Another important factor affecting the adhesion of the copper seed layer to the barrier is the thickness of the copper seed layer. Table 2 depicts the results of a scribe plus tape test on a substrate with a bulk copper layer deposited on a seed copper layer that was subjected to thermal annealing:
As can be seen from Table 2, a thin copper seed layer will provide better adhesion for a subsequently deposited bulk copper layer than a thick (e.g., ≧1000 Å) copper seed layer. The better adhesion provided by the thin copper seed layer is probably due to delamination caused by interfacial strain associated with the mismatch in thermal expansion between copper and the substrate if a thicker Cu seed layer is used. The delamination deteriorates adhesion repeatability if it occurs before interfacial reactions and diffusion can occur. Thinner copper seed layers can accommodate thermal stress without interface shear. For instance, a 250 angstrom MOCVD copper seed layer can, after thermal annealing, support with good adhesion MOCVD copper films with a thickness greater than 1 micrometer (μm). There is, however, a lower limit for the thickness of the initial copper seed layer since a very thin (e.g., ≦100 Å) copper seed layer may disintegrate and ball up prematurely upon anneal.
At step 114, a high energy ion beam application can be directed at the seed layer and barrier to physically force intermixing of the seed layer and barrier at the interface. Ion beam intermixing relies on the knock-on effect to drive atoms from the established crystal lattice into the barrier, resulting in better atom-to-atom bonding. However, ion beam intermixing has limited effectiveness due to the high energy demands needed for intermixing of between one and ten kiloelectron volts, resulting in possible device damage. Further, the seed layer for ion beam intermixing should be approximately no more than 50 angstroms to avoid absorption of the energy of the ion beam by the surface of the seed layer rather than causing intermixing at the interface and barrier.
At step 116 deposition of the bulk layer to form the copper interconnect is performed. If the seed layer provides a clean starting copper surface, or a seed layer having minimal contamination, nucleation delay approaches zero for bulk copper deposition. With nucleation delay approaching zero, MOCVD deposition results in a high quality copper film with uniform grain size distribution (and preferably relatively large grains), good adhesion and void-free filling. One preferred means of depositing copper is MOCVD deposition using CU(I)(hfac)(tmvs) CUPRASELECT. Initial growth of a copper film on a substrate barrier underlayer with CUPRASELECT occurs by a mechanism that can lead to interface contamination including incorporation of fluorine, carbon and oxygen. However, the deposition method for CUPRASELECT on copper is via a disproportionation reaction which results in deposition of pure copper films having negligible contamination. Thus, when CUPRASELECT is used with MOCVD deposition on a seed layer with good adhesion (such as a copper seed or a platinum seed layer), the bulk copper layer can be deposited with good adhesion and good repeatability.
At step 118, the method for depositing a copper film ends with the deposition of a film having predetermined characteristics, including a predetermined thickness. The quality of the copper film is increased by the deposition of a high quality seed layer using predetermined conditions that emphasize the establishment of good adhesion of the seed to the substrate and preferably a relatively short (near-zero) incubation time or nucleation delay for the deposition of the bulk copper layer. Once the seed layer establishes a good structure, the deposition of a high quality bulk copper layer, making up the majority of the copper films' thickness, can proceed using predetermined conditions that emphasize bulk copper deposition (good filling properties, large grains, etc.) in support of greater process throughput. The process depicted by FIG. 4 supports deposition of a copper interconnect on a substrate barrier, but can also support deposition of copper layers at other points in the fabrication process.
Referring now to FIG. 5, an alternative series of steps are depicted for the deposition of a seed layer and a bulk layer of copper to form a copper film. At start step 120, the substrate is arranged in a reaction or MOCVD process chamber. At step 122, a generally thin copper layer is deposited on the substrate to form a seed layer. The deposition at step 122 is accomplished using CVD with a first precursor that will minimize contamination of the interface formed between the bulk copper layer and the barrier of the substrate. For instance, precursors with firmly bonded ligands can be used to deposit the copper seed layer, such as CuMHY and Cu(hfac)(vtmos) precursors. These precursors are designed to disassociate copper at higher temperatures, such as 90� C. versus 70� C. for CUPRASELECT, and are thus less efficient for the deposition of bulk layers of copper. However, firmly bonded precursors can deposit a thin (e.g., ≦200 Å) seed layer of copper with less contaminants, such as carbon, fluorine and oxygen, being incorporated at the copper seed-to-barrier interface. Another type of precursor than can be used at Step 122 is Cu(II)-hfac precursors. Such precursors may require treatment of the substrate by hydrogen reduction to reduce contaminants. Another type of precursor that can be used at Step 122 are precursors that are hfac-free, such as CpCuTEP precursors. The hfac-free precursors can deposit high-quality copper seed layer without contamination since hfac-free precursors do not have contaminating ligands. Again, however, these hfac-free precursors are generally a poor choice for bulk copper deposition and can only be used for deposition of thin seed layers.
At Step 126, a bulk copper layer is deposited with a second precursor, such as deposition by MOCVD with CUPRASELECT. CUPRASELECT can deposit a bulk copper layer with high material quality and good adhesion to the seed once the seed layer with excellent adhesion to the underlayer is established. CUPRASELECT will deposit copper on a copper seed with minimal nucleation delay. Alternative first precursors can deposit alternative first materials as a seed for bulk deposition with CUPRASELECT, including noble and passivated metals such as platinum. One important advantage of using a first and second precursor is that a copper film can be deposited in a single-reaction chamber with minimal handling.
Referring now to FIG. 6, another alternative method for depositing a copper layer is depicted. At Step 140, the process is started by placing the substrate in a chemical-vapor deposition reaction chamber. At Step 142, a first material is deposited with a first precursor. At Step 144, copper is deposited with a second precursor, while the first material is also being co-deposited. At Step 146, the deposition rate of the first material is gradually decreased from an initial deposition rate to zero while the deposition rate of copper with the second precursor is gradually increased from zero to a full deposition rate. In this manner, a graded transition layer is formed to support the bulk deposition of a copper film. At Step 148, the deposition of copper is continued to form a copper layer, either as a seed copper layer for subsequent deposition of a bulk copper layer, or as a bulk copper layer. If a seed layer is deposited, then a bulk layer can be deposited on the seed layer using a third precursor, such as CUPRASELECT, that will maximize deposition rate on the seed.
Graded chemical-vapor deposition for co-deposition of copper plus another material can be performed with a number of materials to enhance the adhesion of copper to the substrate. For instance, aluminum, chromium, and tantalum nitride, W, WNx and WSix can be used as the first material. An hfac-free precursor can deposit copper so that thorough mixing of the first material and the copper occurs during deposition to establish a seed layer for providing good adhesion to support a bulk copper layer. In this way, graded deposition essentially avoids the formation of an interface between the underlayer and the copper film. Preferably, the overall thickness of the graded layer is limited to less than 200 Å in order to minimize the degradation of the interconnect electrical conductivity using copper metallization. Graduated changes in deposition rates for the first and second precursors can control the amount of intermixing so that the seed layer has a diminishing amount of the first material and a greater amount of copper material as the thickness of the seed layer increases. However, the first precursor and second precursor should be compatible to avoid reactions that can affect the film deposited on the substrate. An hfac-free precursor for copper is preferred since most precursors for other materials tend to react in the gas phase with hfac-containing copper precursors.
Although the present invention has been described in detail, it should be understood that various changes, substitutions and alterations can be made hereto without departing from the spirit and scope of the invention as defined by the appended claims.
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Developing a UV-Curable Bore Sealant
December 4, 2012
Thanks to Freudenberg-NOK Sealing Technologies for contributing one of our most-viewed articles of 2012.
Over the past 20 years, ultraviolet (UV)-curable adhesives and sealants have made continual strides in demanding, high-speed, high-volume applications. UV-curable materials offer reduced cycle times, smaller manufacturing footprints and less energy consumption. They are also safer to use in the workplace.
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Nutritionist to present food theory at MSU
Plant-based diet may help elude diseases
There's a world of diets out there, and one particular strain of eating smart and healthy — based on a two-decade study in China — has caught a lot of attention during the past 10 years.
Lee Fulkerson's 2011 documentary "Forks Over Knives" has popularized nutritional research and writings, which favor a plant-based diet over one of animal-based and processed foods to avoid or even reverse diseases such as cancer and diabetes.
Dr. T. Colin Campbell, one of the world's premiere nutritionists, and one of the men whose work was focused on in Fulkerson's documentary, will talk about "The Health Care Crisis and Its Missing Link" at 7 p.m. Thursday at Akin Auditorium in Midwestern State University's Hardin Building.
The lecture is part of the 11th annual Speakers and Issues Series, and admission is free. Claudia Montoya, MSU Spanish professor and director of Speakers and Issues, saw the documentary in Dallas in 2011 and it made a very strong impression on her.
MSU screened Fulkerson's documentary Thursday in the Clark Student Center to a very good crowd, Montoya said.
"It shows his (Campbell's) life and the life of another doctor, a heart surgeon, (Caldwell Esselstyn) and how they were doing different studies in their own fields about how your diet affects you. They began to share their research and realized how much nutrition has to do with heart disease."
It is very important to be aware of things like this, Montoya said.
"Dr. Campbell proposes to have a plant-based diet, and that is an excellent idea. But, to follow the program the way he suggests it takes a lot of discipline."
There also is more to the plant-based diet that Campbell suggests than just going to the store and buying vegetables and eating them, she said. "He is very concerned about the production of those vegetables, and he is very much in favor of organic farms."
The idea is to avoid chemical pesticides and fertilizers. "Different studies have shown that those types of chemicals have a very bad impact on your health, long-term," she said.
Campbell will lecture about advocating a strong program in nutrition in the health care sciences. Nutrition is never at the forefront of medical curriculums, he said. He advocates nutrition as a discipline and as a mean of preventing disease.
Lectures like Campbell's should create a valuable awareness of the value of nutrition for health, Montoya said, regardless of how diligently people can follow recommended diets.
Campbell should talk about 40 or 50 minutes, and there will be time for questions and answers.
Campbell is the Jacob Gould Schurman Professor Emeritus of Nutritional Biochemistry at Cornell University and received his Ph.D. at the university in nutrition, biochemistry and microbiology.
In 2005 he and his son published the best-seller "The China Study," based on a 20-year research project in China regarding nutrition, disease and diets involving animal-based foods and plants.
The China-Cornell-Oxford Project began in 1981 and concluded that people who ate a plant-based diet were less likely to contract medical issues such as coronary heart disease, diabetes and forms of cancer than people who ate diets high in animal based products.
"The China Study" will be on sale at Akin Auditorium by the MSU Bookstore, and the author will sign copies.
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Posted on Sep 15th,2012 in Amesbury — Judith A. (Justin) Belanger, 57, of Amesbury, passed away peacefully with her family at her side, at Maine Medical Center in Portland, Maine on September 13. The daughter of the late John and Ferolyn (Worthen) Justin, Judith was born in Amesbury on December 5, 1954. She was educated in Amesbury schools and was a graduate of Amesbury High School. She received her certification as a Certified Nurse's Assistant (C.N.A.) from nursing school. She was currently employed as a Certified Nurse's Assistant at Lakeview House in Haverhill. She was an avid cross-country skier, down-hill skier, kayaker, and camper. She enjoyed watching wildlife and especially the outdoors. She also loved reading and helping other people. View Full Information → Judith A. (Justin) Belanger, 57 Share With: Comment's & Condolences Required fields are marked Cancel reply Required fields are marked * Name * Email * Your email address will not be published Comment: You may use these HTML tags and attributes:   <acronym title="">
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Online RN-BSN Program
The RN-BSN Program enables the Registered Nurse with an Associate's Degree in Nursing (ADN) or a Diploma in Nursing to obtain the BSN Degree.
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Publications (2)5.39 Total impact
Article: Efficacy of vitamin E and N-acetylcysteine in the prevention of contrast induced kidney injury in patients with chronic kidney disease: a double blind, randomized controlled trial.[Show abstract] [Hide abstract]
ABSTRACT: Contrast induced acute kidney injury is one of the most frequent causes of hospital acquired acute kidney injury. The present study aims to investigate the efficacy of vitamin E or N-acetylcysteine as an adjunct to current standard therapy in the prevention of this clinical predicament. We tested the hypothesis that vitamin E or N-acetylcysteine added to standard therapy with 0.45 % saline is superior in preserving renal function in patients with chronic kidney disease stage 1-4 undergoing elective computer-assisted tomography with nonionic radiocontrast agents when compared to 0.45 % saline alone. Prospective, randomized, single-center, double-masked, double dummy, placebo-controlled, parallel clinical trial. The patients were randomized to either vitamin E (total dose 2160 mg i.v.) or N-acetylcysteine (total dose 4800 mg p.o.) in addition to 0.45 % saline (1 mL/kg/h over 24 h) or saline alone. Serum creatinine change between baseline and 24 h after radiocontrast was the primary outcome. Contrast induced acute kidney injury was defined as a rise in serum creatinine > 25 % over the baseline value within 48 h. Thirty patients (mean age 74.6 years; 17 females; 9 diabetics; all Caucasians; mean serum creatinine 1.35 mg/dL; mean creatinine clearance 56 mL/min) were enrolled. No patient developed contrast induced acute kidney injury. There was no significant difference in serum creatinine change between the three study arms. Following radiocontrast administration, neither vitamin E nor N-acetylcystein in addition to saline demonstrated an additional beneficial effect on kidney function when compared to saline alone.Wiener klinische Wochenschrift 04/2012; 124(9-10):312-9. DOI:10.1007/s00508-012-0169-2 · 0.79 Impact Factor
Article: Regulation of the Ste20-like kinase, SLK: involvement of activation segment phosphorylation.[Show abstract] [Hide abstract]
ABSTRACT: Expression and activation of the Ste20-like kinase, SLK, is increased during kidney development and recovery from ischemic acute kidney injury. SLK promotes apoptosis, and it may regulate cell survival during injury or repair. This study addresses the role of phosphorylation in the regulation of kinase activity. We mutated serine and threonine residues in the putative activation segment of the SLK catalytic domain and expressed wild type (WT) and mutant proteins in COS-1 or glomerular epithelial cells. Compared with SLK WT, the T183A, S189A, and T183A/S189A mutants showed reduced in vitro kinase activity. SLK WT, but not mutants, increased activation-specific phosphorylation of c-Jun N-terminal kinase (JNK) and p38 kinase. Similarly, SLK WT stimulated activator protein-1 reporter activity, but activation of activator protein-1 by the three SLK mutants was ineffective. To test if homodimerization of SLK affects phosphorylation, the cDNA encoding SLK amino acids 1-373 (which include the catalytic domain) was fused with a cDNA for a modified FK506-binding protein, Fv (Fv-SLK 1-373). After transfection, the addition of AP20187 (an FK506 analog) induced regulated dimerization of Fv-SLK 1-373. AP20187-stimulated dimerization enhanced the kinase activity of Fv-SLK 1-373 WT. In contrast, kinase activity of Fv-SLK 1-373 T183A/S189A was weak and was not enhanced after dimerization. Finally, apoptosis was increased after expression of Fv-SLK 1-373 WT but not T183A/S189A. Thus, phosphorylation of Thr-183 and Ser-189 plays a key role in the activation and signaling of SLK and could represent a target for novel therapeutic approaches to renal injury.Journal of Biological Chemistry 12/2011; 287(8):5446-58. DOI:10.1074/jbc.M111.302018 · 4.60 Impact Factor
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million of synergies from GenOn. Management also has saved significant value. In 2006, NRG rejected Mirant 's 20% premium all-stock offer. Mirant shareholders subsequently lost 85% of their value until NRG effectively acquired it through GenOn
The power market roller coaster continues to carry Mirant .
versus $0.71 per share in the prior-year period. A $0.02 per share gain from an insurance collection related to the Mirant bankruptcy bumped earnings to exactly flat on a GAAP basis. Southern's best-in-class investment program continued to
who will remain CEO and chairman, and GenOn Energy CEO Ed Muller have a history dating back to 2006 when Muller's then- Mirant made a hostile bid worth $8 billion and a 33% premium to NRG's stock price at that time for Crane's NRG that ultimately
chairman Edward Muller into the CEO role in 2013. Jacobs, who was president and CEO of RRI Energy prior to the merger with Mirant that created GenOn, has extensive experience within the power industry. Prior to his role at RRI, he was a managing director
the reverse merger, results for 2010 included 11 months of Mirant 's results as a stand-alone company and one month of the ..... our estimate. Based on the information provided, the legacy Mirant and RRI assets generated higher-than-forecast EBITDA, which
We are placing GenOn Energy GEN under review as we review the valuation impacts from the closing of the merger between Mirant and RRI Energy on Dec. 3, 2010.
generators, including Public Service Enterprise Group PEG, Mirant MIR, and RRI Energy RRI. The bill would allow as much as 1 ..... generators if it passes and Gov. Chris Christie signs it into law. Mirant has no plants in New Jersey. RRI owns four plants representing
with NRG ) remaining pure - play publicly traded IPPs , including Mirant MIR , RRI Energy RRI , and Calpine . However the deal values still ..... value estimates , and we are maintaining our fair value estimates for Mirant and RRI Energy .
Mirant 's MIR second-quarter adjusted earnings ..... through the rest of the third quarter. Mirant finished the quarter with $1.85 billion ..... program in Maryland is complete in 2011. Mirant 's proposed merger with RRI Energy RRI


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Ferris Rates Well in Brookings Metropolitan Policy Program 'Value-Added' Rankings
Ferris measured well in comparison to statewide peer institutions in a recent "value-added"
study that was released in late April by the Brookings Metropolitan Policy Program. more...
Student Research Fellowships Announced for Summer 2015 Semester
The 2015 Student Research Fellowship program supports collaborative research projects between faculty and students. more...
News Headlines
» Miller Scholarship Encourages Students to Pursue Community Pharmacy
» Karafa Appointed Interim Dean of College of Arts and Sciences
» Information Technology Services to Launch New Version of myFSU May 29
» Associate Provost Honored as a Distinguished Woman in Higher Education
» Summer Academic STEM Camps to be Offered for Teens
» Community Encouraged to Donate for Nepal Earthquake Relief
» Ferris First (#Ferr1s): Yadan Du
» Read More Ferris State University News Headlines
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14 CFR 27.993 - Fuel system lines and fittings.
(a) Each fuel line must be installed and supported to prevent excessive vibration and to withstand loads due to fuel pressure and accelerated flight conditions.
(b) Each fuel line connected to components of the rotorcraft between which relative motion could exist must have provisions for flexibility.
(d) Each flexible connection in fuel lines that may be under pressure or subjected to axial loading must use flexible hose assemblies.
(e) No flexible hose that might be adversely affected by high temperatures may be used where excessive temperatures will exist during operation or after engine shutdown.
[Doc. No. 5074, 29 FR 15695, Nov. 24, 1964, as amended by Amdt. 27-2, 33 FR 964, Jan. 26, 1968]
Title 14 published on 2014-01-01
The following are only the Rules published in the Federal Register after the published date of Title 14.
For a complete list of all Rules, Proposed Rules, and Notices view the Rulemaking tab.
Title 14 published on 2014-01-01
The following are ALL rules, proposed rules, and notices (chronologically) published in the Federal Register relating to 14 CFR 27 after this date.


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Special page
|Enchant Weapon - Mongoose
|Enchant effect
|Permanently enchant a Melee Weapon to occasionally increase Agility by 120 and attack speed slightly. Requires a level 35 or higher item. +
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|375 +
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|Modification dateThis property is a special property in this wiki.
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This good-looking fanless hybrid works as a slim Windows tablet or an ultra-portable laptop, but still suffers from the same awkward marriage of base and screen as many hybrids.
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The WD My Passport Pro is an all-around excellent storage solution for any Thunderbolt-enabled Macs, particularly the MacBook Pro or Air.


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Speakers Corner
It's free to register, to post a question or to start / join a discussion
Car Battery Problems
Likes # 0
Posted November 7, 2011 at 8:58PM
Over the last couple of weeks I have found that the car battery goes flat if the car sits in garage a few (three or so) days.
I have a charger, so it's not an emergency, and so today, having double checked a couple of times that nothing had been switched on, I took it back to the main dealer from whom I bought it, new, less that six months ago.
They are forty miles away.
They had it from 8.30 until 2.00 and said that they had found the battery needed charging, and they had now given it a full charge and it should be OK.
Now I have been retired for ten years, and my electrical knowledge might be a little rusty, but I would have thought that a battery that needed a charge after a fast 40 mile run was a symptom of a fault, rather than the fault itself, and I would have been looking at the alternator or a duff cell.
However, my suggestion of a deeper fault was received somewhat patronisingly.
After all, I am a time served aircraft engineer, and they use 24 volts. What could I possibly know about a car, which uses a 12 volt system!
Likes # 0
Posted November 7, 2011 at 9:34PM
I had a similar problem with a battery in a new car that would go completely flat within days.
The dealer replaced the battery like for like and all seemed well for a month, then the battery died again.
First dealer had closed so went to a different dealer, they again swapped like for like, and a month later it happened again.
So they looked again and noticed that the battery was the wrong model, it was the battery for a petrol model rather than a diesel. So they fitted the correct battery and everything was hunky dory and I had no more problems for the five years I owned the car.
Likes # 0
Posted November 7, 2011 at 9:50PM
It does sound like either a battery fault or a charging (alternator) fault.... The caveat to this is if the car only normally does very very short runs (esp so if it's diesel). It can cause low charge issues with the battery that the 40 mile run may not have fixed.
Likes # 0
Posted November 7, 2011 at 9:52PM
I had a Vectra few years ago, good battery kept going flat, and traced it to a sticking relay on the heated rear window circuit. Not common, but does happen.
Likes # 0
Posted November 7, 2011 at 10:13PM
Car alarm draining power or internal light (boot/glove box) left on or radio drawing power?
Likes # 0
Posted November 7, 2011 at 11:29PM
I had to call out the AA when my 4 year-old Corsa wouldn't start. He tested the battery with a special meter, and declared it duff. He had a replacement on board, but it cost me £73.
He told me 4-5 years is the life expectancy these days. His new battery came with a 3 years roadside warranty.
Likes # 0
Posted November 7, 2011 at 11:55PM
Did you check that the drive belt was tight enough.
Likes # 0
Posted November 8, 2011 at 12:31AM
Vehicle batteries can be funny beasts at the best of times. I have a old Ford Sierra estate that is used for carrying and towing all sorts of items around the yard, and the battery in that must be at least 15 years old. Considering that the vehicle is only used infrequently, the battery seems to work first time, every time. (fingers crossed)
Another vehicle I have caused concern not all that long ago, when the battery (4 year old) failed suddenly. Got a replacement from the local car accessory shop which failed within two days, so obtained a third battery, Europarts own brand (Bosch?) with lifetime warranty. And everything seems back to normal.
Likes # 0
Posted November 8, 2011 at 5:35AM
Hmmmm . . . morddwyd - I think your post is more concerned with the "main dealer" who appears to be disinclined to replace your battery. I find this shocking behaviour. They are a main dealer so it's not like it's a sole proprietor having to put up with the hassle of returning one battery to his supplier.
Try this: charge your battery overnight and then disconnect it for 3-4 days and see if it goes flat. If it does, it's definitely a dud
Then on your next scheduled visit, charge it overnight before you go, tell them this and ask for a replacement while they assess your battery over a three or four day period - enough for it to go flat. Perhaps phone them first and suggest this approach?
Hopefully they will not call you back in to collect yours.
I've said it before on this forum - Halfords calcium batteries are imho worth the premium price. If it does go wrong, Halfords staff usually replace the battery no quibble as there is a date code on the casing (and a 4 year g'tee), and if you have doubts about the battery, they have always come up trumps with me.
Likes # 0
Posted November 8, 2011 at 5:48AM
Could be something draining the battery - a friend had a new Ford that suddenly started to go flat and it went back to the dealer several times and they did not find the fault, until one night he parked it in a dark car park and after he locked it he heard a click as he walked away and saw a glimmer of light from the boot reflected in a puddle. The electric boot lock has got a fault and it was allowing the boot to open just enough to put the boots interior light on which was draining the battery over several day. Result - new switch from the dealer, problem solved.
Likes # 0
Posted November 8, 2011 at 7:13AM
The problem with disconnecting the battery is that it can cause problems with the radio security code.
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text: FILE - In this March 2, 2013, file photo, Colorado State center Colton Iverson drives against Boise State defenders Jeff Elorriaga (11) and Kenny Buckner (42) during an NCAA college basketball game in Boise, Idaho. Iverson, a Yankton, S.D., native, was picked by the Boston Celtics in the NBA draft. (AP Photo/Darin Oswald, File)