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Oscar snubs leave Globes with also-ran nominees
The Globes feature two best-picture categories - one for drama and one for musical or comedy. Most of the Globe contenders also earned Oscar best-picture nominations, including all of the drama picks: "Argo," `'Lincoln," `'Life of Pi," `'Django Unchained" and "Zero Dark Thirty."
Yet only two of the Globe musical or comedy nominees - "Les Miserables" and "Silver Linings Playbook" - are in the running at the Oscars. That's not unusual, though, since Oscar voters tend to overlook comedy. The other Globe nominees for musical or comedy are "The Best Exotic Marigold Hotel," `'Moonrise Kingdom" and "Salmon Fishing in the Yemen."
Acting contenders include Daniel Day-Lewis, Sally Field and Tommy Lee Jones for "Lincoln"; Hugh Jackman and Anne Hathaway for "Les Miserables"; Joaquin Phoenix, Amy Adams and Philip Seymour Hoffman for "The Master"; Bradley Cooper and Jennifer Lawrence for "Silver Linings Playbook"; Leonardo DiCaprio and Christoph Waltz for "Django Unchained"; Alan Arkin for "Argo"; and Jessica Chastain for "Zero Dark Thirty."
Globe acting recipients usually are a good sneak peek for who will win at the Oscars. All four of last season's Oscar winners - Meryl Streep for "The Iron Lady," Jean Dujardin for "The Artist," Octavia Spencer for "The Help" and Christopher Plummer for "Beginners" - took home a Globe first.
Jodie Foster will receive the Globes' Cecil B. DeMille Award for lifetime achievement at the 70th Globes ceremony, airing live from 8-11 p.m. EST on NBC.
There will be a friendly rivalry between the hosts of the Globe ceremony, Tina Fey and Amy Poehler. The co-stars of the 2008 big-screen comedy "Baby Mama" both are nominated for best actress in a TV comedy or musical series, Fey for "30 Rock" and Poehler for "Parks and Recreation."
The Globes present 14 film awards and 11 television prizes.
The Associated Press

subset: commoncrawl


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1996 RM 125 Blown Head Gasket
I could use a bit of help.
I am fixing a 1996 RM 125 for a young fellow. It is his first bike.
He got it in a non running condition.
I am a long time rider starting with my first bike a Hodaka Ace 100 but my newest two stroke is a 1972 Yankee Z.
I have worked on many air cooled Two strokes but never a watercooled one.
His bike had no compression so I pulled the head.
I can see were the steam has cleaned off the carbon on the piston so I know the head lost its seal.
Thesewatercooled bikes only have two O Ring sealing the head? I did not see a copper head gasket.
How is the best way to insure that the sealing surfaces are going to reseal once I install the new O Rings?
The Cylinder is stilll showing cross hatching on the cylinder wall. Can a Nikasil cylinder be honed like a steel cylinder?
Is there a PDF online of the service manual?
There are only orings to seal the head, you should check to see if the head is warped from overheating otherwise the seal should be fine.
Nikasil should not be honed but i have used one by hand to clean it up.
Google is your friend on the manual.
Good luck with it, fun bike!
I'm guessing that if it is o-ringed for that age bike it is a modified head, they came with a gasket from stock but had a real odd set up with little to no squish band.
What does the piston look like? it is very common for the exhaust side of the piston to be damaged from water entering the chamber if it was running. Check the rings they maybe stuck in there grooves, and they go out of shape quick.
I o-ring a lot of heads, the o-rings tend not to fail in fact I've never had one fail. It will be a reaction to something else that will course the o-ring seal to fail.
So you may have to find the course before you can fix the problem.
Most "modern" 2 strokes have the o-rings instead of the copper head gasket and this bike is one of them, I checked the parts pic and indeed there are 2 o-rings.
Yep I got that wrong and indeed it is machined from the factory with o-rings. I had the one in the pic a few years ago and blindly assumed they would be the same lol.
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B'nai B'rith International rejected as inaccurate its topping a well-known charity watchdog's list of "charities in deep financial trouble."
"B'nai B'rith International does not have $13 million negative capital and we are not in financial trouble," the group said on Charity Navigator's Web site. "The numbers Charity Navigator used to place B'nai B'rith on its '10 Charities in Deep Financial Trouble' list were a year old."
It appears from the most recent of the organization's International Revenue Service 990 forms posted on the B'nai B'rith Web site that Charity Navigator was working from 2010 figures, when B'nai B'rith recorded $13.5 million in negative capital.
The most recent form, for 2011, shows B'nai B'rith $154,145 in the black. The 2011 return also shows that donations to the organization spiked from $8.7 million in 2010 to $12.2 million last year.
The B'nai B'rith statement cites the U.S. government's takeover in September of B'nai B'rith International's pension plan as a factor in the group's improved fiscal outlook, noting that the decision to turn to the Pension Benefit Guaranty Corp. was a difficult one.
"The request was made for a greater good — to continue the good works we do, and to ensure former employees and current pension-eligible employees will have their pensions when they need them," the statement said.
B'nai B'rith's listing as the most insolvent of 10 charities was part of a Top 10 issue of Charity Navigator marking its 10th anniversary for December, when charitable giving tends to spike.
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The Foothill League will be well-represented in the CIF Southern Section cross country finals. Six teams and Golden Valley's Chelsey Totten qualified for the Division II final at Mt. San Antonio College next week.
The Valencia girls squeaked in after tying with Capistrano Valley for the last qualifying spot to advance to the finals. Prelim meet officials decided to take both teams, Valencia and Capistrano Valley.
The Saugus girls won their heat with five runners finishing in the top 12. Heidi Hoslet was the top runner from Saugus and was sixth in 17 minutes, 20 seconds.
The Canyon girls finished in fourth place in the same heat as Saugus. Madison Hills paced Canyon with a 10th-place finish in 17 minutes, 28 seconds.
Totten, the top runner from Golden Valley, was fourth in her heat and will compete in the Division II final as an individual runner. She completed the course in 16 minutes, 53 seconds.
The Golden Valley boys were first in their heat in the Division II preliminaries. The Hart and Saugus boys teams also qualified for the Division II finals. The Saugus boys won the Southern Section Division II championship last year.
Don't miss a thing. Get breaking news alerts delivered to your inbox.
In high school tennis, the Valencia girls advanced to the quarterfinals of the Southern Section Division 3 playoffs with a 13-5 win over Upland.
The Vikings No. 1 doubles team of Michelle Savage and Shenelle Trujillo swept their sets, 6-1, 6-1, 6-1.
The Hart girls tennis team is still alive in the Division 3 playoffs with a 71-65 win in games over Martin Luther King. The Indians tied with King, 9-9, on sets. Hart moves on to the quarterfinals.
West Ranch, the top-seeded team in the Division 3 girls tennis playoffs, also advanced to the quarters with a 10-8 win over Santiago.
In college soccer, the College of the Canyons women's team shut out Santa Monica College, 1-0, and won the Western State Conference, Southern Division championship.
COC's Casey Wesley scored the lone goal of the game in the 83rd minute and the Cougars won their first conference championship since2004.
In baseball, the hot stove league is heating up even if the Dodgers have yet to enter the free agent market. The Dodgers and all-star outfielder Matt Kemp are close to a reported eight-year, $160 million deal.
Kemp looks like he's at least one player who will be in Dodger blue for a while.
Follow Tim Haddock on Twitter @thaddock.


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The Wilmington, N.C., City Council will consider several development resolutions at tonight's meeting. The council will vote on whether to extend an agreement with a developer hoping to build an Embassy Suites hotel, whether to pay for repairs to a parking deck and whether to apply for a $500,000 state grant to help fund a $2.8 million improvement of Riverfront Park.
View Full Article in:Greater Wilmington Business Journal (N.C.)
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Jesse Jackson to mediate for US captive in Colombia
The Rev. Jesse Jackson is accepting an invitation by Colombia's largest guerrilla army to mediate the release of an American man it has held since June, Kevin Scott. In Havana, Jackson says he also hopes to meet with jailed American government subcontractor Alan Gross, a Maryland resident.
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tweet Print This! The Real Side – December 19, 2011 Posted by: KHTS AM 1220 in Uncategorized December 19, 2011 - 11:48 pm 0 0 Views {enclose therealside-dec19-2011.mp3} Guest: Brad Dacus – Pacific Justice Institute Topic: Ten Assualts on Common Sense from California Legislatures Right Click Here to Download! 2011-12-19 KHTS AM 1220 The Real Side – December 19, 2011 Leave a Reply Cancel reply Your email address will not be published. Required fields are marked * Name * Email * Website Comment You may use these HTML tags and attributes:   <acronym title="">
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Reebok Soft Touch Men's Buffalo Sabres Cody Hodgson #17 Player Replica Gold T-Shirt
$23.97 $30.00*
Save $6.03 (20%)
Product Information:
Look like the ultimate fan while representing one of Buffalo's finest in the Reebok® Buffalo Sabres Cody Hodgson Replica tee. The lightweight fabric keeps you comfortable throughout the season while you show off your fandom for one of hockey's brightest stars. The team logo and wording quickly lets everyone know which team you are rooting for this season. Cheer Hodgson and the Sabres to victory in the Reebok® jersey tee.
- Reebok® Buffalo Sabres Cody Hodgson #17 T-Shirt
- Hodgson's screen-printed name and number on the back
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- Reebok® wordmark underneath the neckline
- NHL® shield logo underneath the team logo
- Officially licensed by the NHL®
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Clover Meadow Winery
Winemaking has been in our family for over a century and our family continues the tradition using ancient methods developed in 3rd century abbeys and monasteries. Clover Meadow's vineyards and orchards are nestled within some of the oldest forests in Wisconsin's beautiful Bashaw Valley – known for its clear spring water and mild growing season. These natural resources, along with our sustainable, eco-friendly growing philosophy, create fresh, pure organic wines that delight the senses and compliment any occasion. The commitment to sustainable, organic growing methods didn't stop there: far from public sources of water and electricity, our pristine acres are irrigated from a man-made pond that efficiently collects rainwater and snowmelt, and powered by the wind.
Hours of Operation
Summer: Thurs-Sun 12pm-6pm. Winter: Sat-Sun 12pm-5pm.
Articles: Clover Meadow Winery
Part I - This travel suggestion surely falls in the category of "having your cake and eating it, too." When you pop in to any one of these businesses, you're supporting their eco-friendly mission and eating the eco-friendly fruits of their labor too. Read More


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Originally published in Pharmaceutical Outsourcing's website on December 2012.
Patent law is changing rapidly. The changes are putting even greater pressure on patents as a tool for protecting a pharmaceutical or biotechnology company's hard-won inventions. The Leahy-Smith America Invents Act (the "AIA") has made it harder than ever to get a patent, and has also created new ways to challenge patents in the Patent Office before they can be asserted in court. The changes created by the AIA have started to go into effect, with major changes becoming effective in March 2013, and so now is the time to rethink how your company obtains and asserts patents to protect the products and services it has in development and on the shelves.
The AIA switched the United States from a "first to invent" system, to a "first inventor to file" system, to harmonize U.S. law with laws in other countries. As part of that change, the definition of "prior art" (i.e, all existing knowledge that is used to determine whether an invention is sufficiently new and non-obvious to merit a patent) was expanded to include all public uses or sales by third parties, anywhere in the world, that are accessible by the public at any time up until the day the patent application is filed. One example of these potential public uses is a clinical trial that uses the invention and provides information about it to patients and physicians without confidentiality restrictions. Under current law, a one-year grace period applies, so that only third party uses and sales occurring at least one year before the patent application is filed are considered prior art. In addition, under current law, only uses and sales in the United States could be considered prior art. These changes become effective March 16, 2013, for all patent applications filed on or after that date. Patent applications claiming inventions disclosed in an application filed before March 16, 2013, will continue to be judged based on the existing, more narrow definition of prior art.
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A method, including a sequence of process steps, for fabricating insulated gate field effect transistors having very short effective channel lengths. In a first version of the method, the source and drain regions of the device are opened in one process step and self-alignment of the source and the drain to the gate is achieved in one masking step. The drain region is then masked and the source side of the channel is implanted to adjust the threshold voltage of the high threshold voltage channel region. In a second version of the method, the source region is opened and self-aligned with the gate prior to the opening of drain region. Implantation to adjust the threshold voltage of the high threshold voltage channel region takes place before the drain region is opened, and then the drain region is opened and self-aligned with the gate in a further masking step. In either version, the threshold voltage is adjustable and the channel length is controlled to be a small value.
1. A method for fabricating a transistor structure having a short channel length including controlled high voltage threshold and low voltage threshold regions comprising the steps of:
A. forming a first mask having first and second opposed edges over a first area of a body of semiconductor material of one conductivity type,
B. ion implanting impurities into said semiconductor material at said edges of said first mask to form field regions,
C. growing thermal oxide in said semiconductor material at said edges of said first mask to form field oxide regions,
D. removing said first mask and ion implanting impurities of opposite conductivity type into said semiconductor material between said field oxide regions to form a channel region,
E. forming a layer of gate oxide over said implanted channel region,
F. forming and doping a layer of polysilicon over said layer of gate oxide to form doped polysilicon gate material of opposite conductivity type,
G. forming a layer of insulating material over said layer of polysilicon gate material,
H. forming a layer of metal over said layer of insulating material,
I. forming a layer of photoresist material over said layer of metal,
J. using a second mask for defining at least one of a source and drain region and at least one side of a polysilicon gate region, exposing and etching said photoresist, metal, insulating material and polysilicon material to open said at least one of said source and drain regions and to form at least one side of a polysilicon gate,
K. ion implanting impurities through said at least one open source and drain regions to form at least one of said transistor source and drain in said body of semiconductor material, said at least one of said source and drain being aligned with said at least one side of said polysilicon gate,
L. laterally etching away a predetermined amount of at least one side of said remaining metal layer over at least one side of said channel region,
M. and, using said remaining metal layer as a third mask, ion implanting a controlled amount of impurities into one side of said channel region to adjust the threshold voltage of the high threshold voltage channel region for said transistor structure.
2. A method according to claim 1 wherein said second mask in step J defines both a source and a drain region and the sides of a central polysilicon gate region, said source region being defined between one of said field oxide regions and one side of said polysilicon gate region and said drain region being defined between the other one of said field oxide regions and said defined polysilicon gate region,
wherein said exposing and etching process opens said source and drain regions and forms both sides of a polysilicon gate,
wherein said ion implanting step K forms both said source and drain in said body of semiconductor material,
and wherein during said etching step L a predetermined amount of both sides of said remaining metal layer is laterally etched.
3. A method according to claim 2 further including, between step L and step M, the step of disposing a layer of photoresist over the top of the drain side of said structure to form a mask for said ion implantation step M such that only the source side of said channel region is ion implanted,
4. A method according to claim 3 including the further steps after step M including:
N. removing the photoresist layer applied in step M and the remaining metal layer,
O. forming a final insulating layer over said structure,
P. by conventional lithographic techniques, opening holes in said final insulating layer for source, drain and gate contacts,
Q. and forming and delineating a metal layer over said structure by conventional metallization techniques.
5. A method according to claim 1 wherein said second mask in step J defines a source region and one side of a polysilicon gate region, said source region being defined between one of said field oxide regions and said one side of said defined polysilicon gate region,
wherein said exposing and etching process opens said source region and forms one side of a polysilicon gate,
wherein said ion implanting step K forms a source in said body of semiconductor material,
and wherein during said etching step L, a predetermined amount of the source side of said remaining metal layer is laterally etched.
6. A method according to claim 5 further including, between step L and step M, the step of removing the remainder of the layer of photoresist formed in step I and removing the open portions of the layer of gate oxide formed in step E and the layer of insulating material formed in step G.
7. A method according to claim 6 including the further steps after step M including:
N. removing the remaining metal layer,
O. forming a final insulating layer over said structure,
P. by conventional lithographic techniques, opening holes in said final insulating layer for source, drain and gate contacts,
Q. and forming and delineating a metal layer over said structure by conventional metallization techniques.
8. A method according to claim 1 wherein said metal used in step H is tungsten said impurities implanted in steps K and M are boron ions.
9. A method according to claim 4 wherein said metal used in step Q is aluminum.
10. A method according to claim 7 wherein said ion implanting step K is boron ion implantation and said metal used in step Q is aluminum.
1. Technical Field
The present invention relates to a process for the fabrication of Insulated Gate Field Effect Transistors (IGFET's) having very short effective channel lengths and more particularly to a process for fabricating IGFETs with short effective channel lengths wherein the high voltage threshold and the low voltage threshold regions of the channel, as well as their lengths, can be independently varied by chemical etching and ion implantation.
2. Background Art
It is well known in the art that the frequency response or speed of an IGFET (commonly referred to as an MOS transistor) is determined primarily by the channel length and parasitic capacitance, the frequency response or speed improving as the channel length and parasitic capacitance are reduced in value. The reduction in the channel length decreases the transit time for carriers travelling between source and drain, while reduction of the capacitance will decrease the charging time. The problem encountered in the prior art has been that short channel lengths were normally coupled with large parasitic capacitances because the separation between source and drain determines the amount of lateral diffusion under the gate for a given channel length, and the lateral diffused region, which is also highly doped, represents a large capacitance between gate and source or gate and drain. While these parasitic capacitances can be minimized by several techniques such as ion implantation and polysilicon gate processes, these techniques are limited in terms of the smallest channel length that can be achieved and in the control of the threshold voltage. Furthermore, MOS transistors that are conventionally processed with short channel length exhibit breakdown at low voltages.
The prior art has overcome this problem in part by means of a double/diffused MOS transistor, also known as D/MOS which is described in an article entitled "Double-Diffused MOS transistor Achieves Microwave Gain," Electronics, Feb. 15, 1971, by T. Cange, J. Koisic, H. J. Sigg and G. B. Dendelin. The D/Mos process involves a double diffusion at the source region and single diffusion at the drain region within a substantially intrinsic or very lightly doped substrate. The details of the fabrication of the D/Mos transistor in accordance with the above noted publication are to first grow an oxide on a substrate of starting material which can be n-, p-, or π substrate type. The oxide is then opened in the source region and a first P-type diffusion is carried out herein. The drain region is now opened and n+ material is diffused into both the source and the drain regions in an oxidizing atmosphere as in conventional MOS fabrication. The diffusion through the original source region opening forms the required source diffusion. This provides a narrow p-type channel adjacent to the source with an extended drift region in the substrate material to the drain, thereby providing a 1-micron or less channel length. The processing is completed utilizing standard MOS technology procedures.
It is apparent that the above described D/MOS transistor, while overcoming many of the limitations on channel length of the prior art, can only be produced as a discrete transistor element. Fabrication thereof in an integrated circuit would require additional isolation steps to isolate the drain regions from other components in the circuit. In U.S. Pat. No. 3,996,655 issued Dec. 14, 1976 to James A. Cunningham et al on an application filed Aug. 25, 1975 entitled, PROCESSES OF FORMING INSULATED GATE FIELD EFFECT TRANSISTORS WITH CHANNEL LENGTHS OF ONE MICRON IN INTEGRATED CIRCUITS WITH COMPONENT ISOLATED AND PRODUCT, and assigned to Texas Instrument Corporation, there is provided a method of fabricating MOS transistors in integrated circuits wherein isolation is provided utilizing no more steps than is provided in the aforesaid D/MOS system for providing discrete micron channel transistors. Briefly, this is accomplished by providing the substrate of π, p- or n- material and forming an oxide on the surface thereof. The oxide is then opened at the drain regions to provide a p-type diffusion. The region where the source will be formed is then opened up in addition to the regions over the p-type drains and an n+ type diffusion is then provided with proper diffusion scheduling to provide three n+ type regions, two of the regions formed within the p-type regions previously diffused. The result is a driver coupled to a load, the driver-load combination being isolated from other components in the substrate by the large p-type region surrounding both of the drain regions.
The two prior art references described above employ what is known in the art as "double diffusion." Other examples of double diffusion techniques for fabricating transistors with short channel lengths are as follows.
U.S. Pat. No. 3,685,140 issued Aug. 22, 1972 to William E. Engler on an application filed Oct. 3, 1969 entitled SHORT CHANNEL FIELD-EFFECT TRANSISTORS and assigned to the General Electric Company describes an improved field-effect transistor having an exceedingly short channel length wherein a single edge defines the boundaries of both the source and drain regions. In one embodiment a gate electrode is formed over a thin oxide layer deposited on a semiconductor wafer of a first-conductivity type. An opposite-conductivity type impurity is diffused into the wafer adjacent the gate electrode. A first-conductivity-type impurity is diffused within the opposite-conductivity-type region forming a field-effect transistor having one edge of the gate electrode defining the boundary between the source and channel and the drain and channel regions. In another embodiment an edge of an insulating layer defines the boundaries of the source and drain regions.
In U.S. Pat. No. 4,038,107 issued July 26, 1977 to George Marr et al on an application filed Dec. 3, 1975 entitled, METHOD FOR MAKING TRANSISTOR STRUCTURES and assigned to the Burroughs Corporation, an extremely short channel FET is made by making a first ion implant through a polysilicon mask aperture, converting the surface of the polysilicon into SiO2 constrict the aperture size and then making a second ion implant of the opposite type impurity through the constricted aperture. The SiO2 growth effectively moves the edge of the mask by a small controlled distance. This permits a small controlled spacing between the two ion implants which is used for defining an extremely short FET channel. Alternatively a bipolar transistor with a narrow base zone can be made by analogous processing.
In U.S. Pat. No. 4,001,048 issued Jan. 4, 1977 to Gerald S. Meiling et al on an application filed May 23, 1975 entitled, METHOD OF MAKING METAL OXIDE SEMICONDUCTOR STRUCTURES USING ION IMPLANTATION, and assigned to Signetics Corporation a MOS structure is shown which includes a semiconductor body of one conductivity type. A layer of semiconductor material of opposite conductivity type is carried by the semiconductor body and has a planar surface. A mask is formed on the surface and has a predetermined pattern. A first diffusion region of said one conductivity type is formed in the body and is defined by a first PN junction extending to the surface below said mask and to said semiconductor body. A second diffused region of opposite conductivity type is formed within said first diffused region and has substitutional ions therein and being defined by a second PN junction extending to the surface. The first and second PN junctions define a channel of precise length underlying the mask. A layer of insulating material overlies the surface. Contact metallization is provided on the layer of insulating material and extends through said layer of insulating material.
The present invention relates to a method for fabricating IGFETs having very short effective channels, but the method does not use double diffusion techniques. In the conventional D/MOS double diffusion process, examples of which are described above, the channel is made up of two regions: a high-threshold (high-VT) and a low-threshold (low-VT) region. The device characteristics are determined mostly by the high-VT region and the length of the high VT region (L high) is kept very short.
The method of the present invention is distinct from the prior art because although the devices produced by the present invention are similar to D/MOS devices in that the channel is also made up of a high-VT region and a low-VT region and L high is very small, in the present invention, the threshold voltages of both the high-VT and the low-VT regions of the channel, as well as their lengths, can be independently varied by ion implantation and by chemical etching.
FIGS. 1A through 1F are cross-sectional views illustrating the steps of one embodiment of a method for fabricating an IGFET wherein self-alignment of both the source and the drain to the gate is performed in one masking step.
FIGS. 2A through 2G are cross-sectional views illustrating the steps of another embodiment of a method for fabricating an IGFET wherein separate masking steps are used to self-align the source and the drain to the gate.
Insulated gate field-effect transistors (IGFETs), in general, include a pair of opposite-conductivity-type regions adjacent a major surface of a first-conductivity-type semiconductor material wherein the discrete regions, known as source and drain, are separated by a small-dimension channel region over which an overlapping gate electrode is positioned. Conduction between the two regions occurs through the surface-adjacent portions of the channel region between the two regions. This surface channel is formed and modulated by a potential applied to the gate electrode. The length (longitudinal dimension of the separation) of the channel between the two regions defines an exceedingly important parameter in the operation of a field-effect transistor. For a given channel width, the transconductance is inversely proportional to the length of the channel. Therefore a device having a given transconductance can be made physically smaller if the length of the channel can be reduced. This would not only decrease the gate capacity directly, but also reduce lead capacity between associated devices in an integrated circuit. Additionally, smaller devices could be more compactly arranged which would in general lead to improved yields. Further, since the ultimate frequency of operation of the field-effect transistor is limited by the channel transit time which is proportional to the channel length, by reducing the length of the channel, the ultimate frequency of operation could be increased.
The processing steps for two related versions of the method for fabricating an IGFET which exhibits the D/MOS characteristics of a high-VT region and a low-VT region channel and wherein the threshold voltages and lengths of the high-VT and low-VT regions can be independently varied, and where the source and drain are self-aligned to the gate are set forth as follows:
In the first version of the present method, where both sides of the channel region are opened prior to implantation, a substrate of suitable semiconductor material such as p-type silicon is first prepared so that ion implanted field oxide regions can be formed.
The initial preparation steps are well known in the art and are not shown in the drawings. The semiconductor substrate is provided and a first layer of insulating material such as silicon dioxide (SiO2) is formed on the upper surface of the substrate by conventional thermal oxidation techniques to form a layer of SiO2 in the range of 50 to 500 Angstroms thick. Thereafter, a layer of silicon nitride (Si3 N4) is disposed on the silicon dioxide by conventional techniques such as chemical vapor deposition to provide a layer of Si3 N4 in the range of 200 to 2,000 Angstroms thick. Then another layer of SiO2 is disposed on the Si3 N4 layer by conventional techniques such as chemical vapor deposition to form a third layer in the range of 200 to 2,000 Angstroms thick.
After the three layers are formed on the substrate a first mask is utilized in connection with conventional photolithographic and etching techniques to strip away all of the aforesaid three layers except for a rectangular portion which overlies what will be the channel region of the resultant device.
Next the field region is ion implanted using boron for the field doping and thermal oxide is grown in the silicon substrate (i.e. the semi-ROX technique) to form recessed oxide in the range of 3,000 to 10,000 Angstroms thick. The three layers of SiO2, Si3 N4 and SiO2 over the channel region are stripped away and the channel region is ion implanted using phosphorus or arsenic for depletion mode threshold adjustment. The resultant structure is shown in FIG. 1A including substrate 10, the recessed oxide 12, the field oxide implantation 14 which diffused out during growth of the recessed oxide 12, and the n- implanted channel region 16.
In the next step, as shown in FIG. 1B, the gate oxide 18 (SiO2) is thermally grown to a thickness in the range 100-2,000 Angstroms. Then a layer 20 of polysilicon is formed by chemical vapor deposition to form a polysilicon gate having a thickness in the range 2,000-7,000 Angstroms. The polysilicon gate layer 20 is then doped to n+ and a layer 22 of SiO2 is formed either thermally or by chemical vapor deposition to a thickness in the range 500-2,000 Angstroms. Alternatively, the polysilicon layer can be doped in situ during deposition. Next, a layer 24 of tungsten is disposed on layer 22 which will be used for implantation masking. A layer of photoresist 26 therefore, is applied over the tungsten layer 24.
At this point, after the formation of the structure of FIG. 1B, the method may proceed in either of two versions. In the first version, where both sides of the channel are opened prior to source and drain implantation, the source and drain spacing is defined by masking. More particularly, a mask is placed over the photoresist layer 26, the photoresist is exposed, developed, and chemically etched, the tungsten exposed by the removed resist is chemically etched, the SiO2 and then the exposed polysilicon are removed by directional etching techniques such as reactive ion etching to form the structure illustrated in FIG. 1C wherein the source and drain regions are opened and the polysilicon gate 20 is defined. The source and drain regions are formed by ion implantation using phosphorus or arsenic as dopants. The recessed oxide 12 and the photoresist 26 serve as masks for the implantation, therefore the source and drain regions 28 and 30 are self-aligned to the polysilicon gate 20.
Next, without removing the photoresist 26, a wet chemical etch is employed to laterally undercut the tungsten 24 as illustrated in FIG. 1D to provide space for later ion implantation of the source side for threshold adjustment. Referring to FIG. 1E, a new layer 32 of photoresist is applied over the structure and is then masked, exposed, developed and etched away over the source side of the structure as shown. This opens the source side of the structure for ion implantation (i.e. boron). An ion implantation step is performed using the tungsten layer 22 and photoresist layer 32 as a mask. It is seen in FIG. 1E that the boron goes deep into the source region 28 but shallow into the channel region under the polysilicon layer 18 because the polysilicon layer acts as a mask for the channel region. Thus implanted boron region 34 is controlled as desired to adjust the threshold VT so as to provide a high-VT and low VT region D/MOS-like structure. That is, there are two threshold regions in the channel, the implanted region 34 under SiO2 layer 18 and the non-implanted region 16 under SiO.sub. 2 layer 18.
Finally, the photoresist layer 32 is removed, the tungsten 24 is removed, silicon dioxide is regrown to form a layer 36 of SiO2 as shown in FIG. 1F. Layer 36 may be started by thermal oxidation and then completed by chemical vapor deposition to speed up the process. Contact holes in silicon dioxide layer 36 are opened in the source, drain and gate regions as shown in FIG. 1F by typical photolithographic masking and etching, and then the resulting structure is metallized with aluminum or with (Pd2 Si+Al) and the metal 38 is delineated by conventional techniques. The other version or embodiment of the method to be described below may be used if, for some reason the photoresist layer 32 of FIG. 1E does not provide adequate masking or stopping power for the boron implantation 34 used for the threshold adjustment. In such instance, an alternative process may be used wherein only one side (the source side) of the structure is opened. The first steps of the alternative version of the method are the same as previously described. Thus, FIGS. 2A and 2B of the alternative version are identical to FIGS. 1A and 1B.
After performing the steps which resulted in the structure of FIG. 2B, photoresist layer 26 is masked, exposed, developed and etched, the exposed tungsten layer 24 is chemically etched and the exposed portions of the SiO2 layer 22 and the polysilicon layer 20 are removed by reactive etching to form the structure illustrated in FIG. 2C wherein only the source region is opened. The basic difference between the fabrication of the structures of FIGS. 1C and 2C is the configuration of the mask employed. The source junction 28 is then formed by ion implantation and is self-aligned to the polysilicon gate material 20 as a result of the masking effect of the recessed oxide 12 on one side and the polysilicon layer 20, SiO2 layer 22, tungsten layer 24 and resist layer 26 on the other side. Alternatively, the source junction 28 may be implanted at a later step at the same time that the drain junction is implanted.
The source side of the tungsten 24 is undercut by lateral wet chemical etching in a manner the same as described relative to FIG. 1D to produce the structure shown in FIG. 2D. The resist layer 26 is then removed and the exposed portions of the SiO2 layers 18 and 22 are etched away to provide the structure illustrated in FIG. 2E. The ion implantation of boron or other suitable dopant is then performed. The SiO2 layer 22 and the tungsten layer 24 prevent any implantation into the drain side of the structure. The portion of polysilicon layer 20 over the left channel region causes a reduced implantation into the left channel region relative to the implantation into the open source region 28. This implantation 34 shown in FIG. 2E provides the threshold adjustment which causes the structure to be D/MOS-like in performance.
In the next step the tungsten 24 is removed and a layer of photoresist is formed over the structure. Using conventional lithographic techniques the gate on the drain side is defined and the drain region is opened. Then the photoresist is removed and another ion implantation is performed to form the drain 30 as shown in FIG. 2F. It should be noted that the implantation step also further implants the source region 28. Therefore, if desired, the previous step of implanting the source region 28 shown in FIG. 2C may be eliminated and the source region 28 may be formed at the same time as the drain region 30 in the step indicated at FIG. 2F.
Finally, as in step 1F, an SiO2 layer 36 is formed partially by thermal oxidation and partially by chemical vapor deposition techniques. Contact holes are then opened into the source, gate and drain and metal 38 is deposited and delineated.
In the present method, including the two versions described, the length of the high-VT portion of the channel is defined by the tungsten etching step. Tungsten is specified because of its well known etching characteristics, however other metals such as gold, molybdenum, chromium, titanium/chromium etc. can also be employed.
Instead of photoresist, sputtered SiO2 can be used as an etch mask for the metal layer.
In the first version of the method illustrated in FIGS. 1A-1F self-alignment of the source and the drain to the gate takes place in one masking step and therefore the lengths of the high-VT regions can be well controlled. In the second version of the method illustrated in FIGS. 2A-2G separate masking steps are used to self-align the source and the drain to the gate and therefore less control is obtained over the length of the low-VT region. However, variations in the length of the low-VT region have minimal effect on the device characteristics which are determined mainly by the high-VT portion of the channel.
The method of this invention is effective for fabricating transistors, particularly insulated gate field effect transistors (IGFET) having very short channel lengths for improved frequency response or speed. The method also results in an IGFET which has a channel made of two threshold regions and therefore exhibits the properties of a double/ diffused MOS transistor (D/MOS). However, unlike the D/MOS process, the present method permits the channel length and the thresholds to be independently varied.
No advanced lithographic tools or critical alignment steps are required in the method, and the method allows both enhancement-mode devices and depletion mode devices to be fabricated on the same chip. The heat cycles involved in the method are much less than those used in conventional D/MOS processes and therefore doping profiles in the channel and field regions can be better controlled.
While we have illustrated and described the preferred embodiments of my invention, it is to be understood that we do not limit myself to the precise constructions herein disclosed and the right is reserved to all changes and modifications coming within the scope of the invention as defined in the appended claims.
Patent Citations
Referenced by
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VENICE, La. -- Venice, in lower Plaquemines Parish, is one of five sites between Louisiana and the Florida panhandle where crews are preparing to respond to that massive oil spill, still growing 20 miles offshore.
An underwater well continues to leak more than 40,000 gallons of crude oil per day from the site of the wrecked drilling rig Deepwater Horizon in the Gulf of Mexico.
Supplies are arriving by the truck load to help fight the pollution should the spill moves toward the Louisiana coast.
Chief Rob Birdwell is a member of the Coast Guard's elite national strike force, sent to Venice to help coordinate the cleanup.
'The role of this place is going to be almost like a forward operating base, a staging area that we can deploy equipment out of, that we're able to set it up and get it closer on scene in the event there is impact of oil on the southern Louisiana coast,' said Birdwell.
There is already more than 100,000 feet of oil containment boom staged in Venice, along with pallets full of absorbent material, skimmers, communication trailers and small boats.
'Preparation is the key right now,' said Birdwell. 'That's what we're working on to kind of get one step ahead and try to minimize whatever impact we may be dealing with here in the future.'
The Coast Guard is also being proactive. According to Plaquemines Parish President Billy Nungesser, crews are already deploying oil containment booms near Pass a Loutre, Pelican Island and Breton Sound.
Wednesday, they are expected to deploy them near the Chandeleur Islands.
'Our biggest fear is that the winds push it ashore and that we end up with oil along the shoreline that would really hurt the environment as far as the seafood industry and the marshes,' said Nungesser.
While crews prepare to fight a giant oil spill, shrimper Acy Cooper and his sons prepare their boats for the start of shrimp season in a couple of weeks -- a season Copper says may now be in jeopardy. 'This is the time of the year that they all come in,' said Cooper. 'With the oil slick out there, it could kill all the little shrimp that's coming in, so we're worried seriously about it. It's going to be devastating to our industry.'
'We'll do everything that we can to protect environmentally and economically sensitive areas,' said Birdwell.
In addition to Venice, the Coast Guard is also setting up staging areas in Biloxi and Pascagoula, Mississippi; Theodore, Alabama; and Pensacola, Florida.


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Cozy Knitted Blanket Patterns: 4 Free Afghan Knitting Patterns
A Free Downloadable eBook
No matter the time of year, it's always handy to have knit blankets to pull out at moment's notice. For the summer months, they can be your escape from the cooler, drafty conditions indoors; while in the winter they can provide refuge and warmth from the crisp air outside. Here at Knitting Daily we love to get cozy in our favorite afghans and wanted to share some of this knitterly afghan inspiration with you.
In this free eBook you'll discover a variety of styles and patterns for knit blankets to spark your creativity. You'll find a stunning counterpane bedspread, a beautiful lacy afghan with an easy-to-memorize repeat, a classic Aran blanket, and a colorful mosaic afghan. Plus, along with these four free knitting patterns for afghans, you'll find helpful tips and notes to help you be successful knitting each pattern. The entire collection of knitted afghan patterns and knitting instructions is completely free to download! So grab your yarn and needles and cast-on one of these knit blankets today.
Afghans are handy to have around for draftier, cooler temperatures indoors and when the weather outside turns chilly. And, there is nothing that warms the soul more than hand-knitted afghans, whether made for your home or to give to another. We've gathered this collection of four free knitting patterns for afghans to provide you the perfect inspiration for knitting your own handmade blankets. The Yggdrasil Afghan is a true stunner, with intricate cabling, leaf lace, and multi-directional knitting. The Frost Flower Afghan has an airy feel that is perfect for year-round enjoyment. The Graphic Afghan is worked in bulky wool with a geometric design, making it both a functional and fun knit. Finally, the Mosaic Tile Afghan is a colorful, knitted interpretation of a mosaic tile wall, worked up as individual squares that are sewing together. Whether you choose to make one or all four of these beautiful knit afghan patterns, you are sure to be inspired by these original designs. Download the entire collection of free knitted afghan patterns to get started!
Download Cozy Knitted Blanket Patterns: 4 Free Afghan Knitting Patterns, a free eBook from the experts at Knitting Daily!
Along with this FREE eBook of knit afghan patterns, you'll also receive a free membership to our Knitting Daily community. Your membership provides you access to our free projects library, our knitting community blogs, and our daily email newsletter with all sorts of tips, tricks and more free projects!
Download your FREE knitting patterns for blankets eBook to get started today!
Along with each pattern you will find detailed instructions and when helpful, lace charts to help you be successful knitting these afghans.
Counterpane Knit Afghan Pattern: Yggdrasil
Afghan by Lisa Jacobs
Lace Blanket Knitting Pattern: Frost
Afghan by the Knits Design Team
This airy blanket knitting pattern is worked in three separate panels that are sewing together with an invisible stitch. You can change the length and width of the panels to make the afghan any size you want, or use them to make a shawl. Because the patterns are worked in four-row repeats, this is a good project for first-time lace knitters. Claim your entire collection of knitting patterns for blankets to get this design plus three others!
Blanket Knitting Patterns
Geometric Knit Afghan Pattern: Graphic
Afghan by Sarah Fama
Sarah's knit afghan pattern is full of rich texture and geometric interest. Created using simple knit and purl stitches the pattern is actually reversible with no real right or wrong side to the finished knitted afghan. Seed stitch is used to edge the entire blanket, the border is knitted as you go so use stitch markers to help you keep track of the border stitches. The bulky wool and big needles help this blanket knitting pattern work up quickly and will grace your home for years to come. Download all four free knitting patterns for afghans to be inspired today!
Mosaic Blanket Knitting Pattern: Mosaic Tile Afghan by Judith L. Swartz
Reminiscent of a mosaic tile wall, this beautiful knit afghan pattern will be a colorful addition to any room. Each square is made individually then sewn together to create the finished knitted afghan. Since each square is worked up separately, this project is perfect to take along with you. Get this free blanket knitting pattern plus three others when you download this free eBook!
This free eBook is our gift to you to celebrate the joys of knitting afghans for yourself and others. How will you choose which of these FREE knitted afghan patterns to begin first?
Everything about these beautiful knit afghan patterns makes them a delight to knit!
Get ready to explore four of the many versatile options that knitting afghans has to offer. Learn how to tackle design elements such as cables and lace, and follow step by step to learn what it takes to create knit blankets. Plus, with all the helpful tips from these accomplished designers, you will have everything you need to start and finish nearly all your knitted afghans. Get all four free knitted afghan patterns plus expert tips, techniques, and instructions, all in one handy eBook.
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The Sopranos star James Gandolfini sadly passed away from a heart attack on Tuesday while in Italy and RadarOnline.com has uncovered eerie footage from a 2002 scene of the hit HBO show in which the death of James' character, Tony Soprano, is predicted by the age of 50 of a heart attack.
In the episode, Tony is participating in an intervention for Christopher Moltisanti, played by Michael Imperioli, regarding his drug use — but when Christopher gets defensive the tables turn.
"We are here to talk about you killing yourself with drugs," James' character yells out to Christopher.
"I'm gonna kill myself?" Christopher asks. "The way you f**kin' eat, you're gonna have a heart attack by the time you're 50!"
As RadarOnline.com reported, Gandolfini, 51, died of a suspected heart attack while in Italy for the 59th Taormina Film Festival in Sicily.
PHOTOS: Bizarre Celebrity Deaths
He is survived by his wife, Deborah Lin, and their 8-month-old daughter, as well as his teenage son from a previous marriage.


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These overwound vintage style Strat pickups offer increased output, sparkling highs and a very nice warm tone while retaining your favorite vintage Strat characteristics. Constructed with Alnico 5 magnets and polysol magnet wire and featuring a reverse wound/reverse polarity middle pickup for hum canceling in positions 2 & 4, these pickups scorch. OEM on the Jimmy Vaughan Stratocaster. Available in white only.
Fender Tex Mex Pickups set of 3
Item # 100365097 | Condition: Info | Customer Ratings: ( 5 Based on 14 reviews)
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Fender Tex Mex Pickups set of 3 Specifications:
- Tex-Mex Stratocaster Bridge Pickup:
DC Resistance: 7.4K
Inductance: 3.7Henries
Tex-Mex Stratocaster Middle Pickup:
DC Resistance: 6.4K
Inductance: 2.75Henries
Tex-Mex Stratocaster Neck Pickup:
DC Resistance: 6.4K
Inductance: 2.75
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A fantastic upgrade- very pleasedAs reviewed by Gabriel Becker on 10/14/2010
when upgrading a strat for blues most go for the texas specials (which are nice pickups) but for some reason, the tex-mex pickups are chosen less. I've played both, and I'd like to say that for the money,.....the tex mex are the way to go. There ARE differences between the texas specials and tex mex, but those differences are very minimal. they both use the same alnico magnets, and both add a "gritty & crisp" sound. The main difference is that texas specials are made in the USA, and tex mex are made in Mexico. The tex mex pickups are less than half the price of the texas specials. I recently upgraded a MIM strat with the tex-mex pickups. All I can say is WOW! sharp, crisp, round, and when cranked up a bit very gritty. The improvement over standard pickups is staggering. The fender MIMs are nice instruments, but after a proper setup and the installation of these tex mex pups, my strat is much more comparable to high end USA strat in the $1,500 price range. I would recomend this upgrade to ANYONE. you won't regret it.16 of 16 people found this review helpful.Was this review helpful?Thank You for rating this review!
Great Classy Bluesy Clean Tone at an afordable priceAs reviewed by Josh on 8/11/2010
These come standard on my Fender American Standard Strat HSS, and they are fantastic. They have a great, glassy, classic Strat tone that are great for blues. But they are also real versatile, I love 'em with overdrive too, which gives you a great, Texas Blues sound, which I guess is good because of its title. They can easily contenc with the Custom Shop models like the Texas Specials.If I could, I'd get one for the Bridge to complete my set rather than the Humbucker, but still, great great pickups. If you want nice, clean, clear, classic Strat tone, but have a budget, get these pickups, even if you can spend all the money in the world, get these pickups. Great stuff.10 of 10 people found this review helpful.Was this review helpful?Thank You for rating this review!
All the Texas You Can HandleAs reviewed by Christopher Heady on 5/19/2010
I was skeptical about these pick-ups and the reviews others left about them. Now I highly recommend them. Here is Why: I did as much research as I could comparing the USA Texas Specials and these Tex Mex Pickups, and I found that they were nearly identical. I pulled the trigger and bought a set, then loaded them in my home brew strat and they rocked my socks off!!! THE BEST sounding strat that I have ever played!!! I totally recommend these to everyone. The bridge pickup screams, the middle pickup yields beautifully, and the neck pickup is so sweet. I used to only use to use the 2 and 4 positions on strats, but now I use all five positions just to be able to heart the full range of these beauties!7 of 7 people found this review helpful.Was this review helpful?Thank You for rating this review!
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Antarctic expeditions
Byrd's first Antarctic expedition (1928–30), the largest and best-equipped that had ever set out for that continent, sailed south in October 1928. A substantial and well-supplied base, called Little America, was built on the face of the Ross Ice Shelf, a wide plain of shelf ice fronting the Ross Sea near an indentation in the ice cliff named the Bay of Whales. Flights were made from this base over the Antarctic continent. A range of high mountains, named the Rockefeller Mountains, was discovered; and a large tract of hitherto unknown territory beyond them was named Marie Byrd Land, after Byrd's wife. On Nov. 29, 1929, Byrd, as navigator, and three companions made the first flight over the South Pole, flying from Little America to the Pole and back in 19 hours with no mishap. Byrd was afterward promoted to rear admiral for this achievement.
In 1933–35 a second Byrd expedition visited Little America with the aim of mapping and claiming land around the Pole; he extended the exploration of Marie Byrd Land and continued his scientific observations. During the winter of 1934 (from March to August) Byrd spent five months alone in a hut at a weather station named Bolling Advance Base, buried beneath the ice shelf face 123 miles (196 km) south of Little America, enduring temperatures between −58° and −76° F (−50° and −60° C) and sometimes much lower. He was finally rescued in a desperately sick condition, suffering from frostbite and carbon monoxide poisoning. This was perhaps his most controversial exploit.
At the request of President Franklin D. Roosevelt, Byrd took command of the U.S. Antarctic service and led a third expedition to Antarctica in 1939–41, this one financed and sponsored by the U.S. government. Bases were located at Little America and Stonington Island, off the Antarctic Peninsula. Byrd's discovery of Thurston Island greatly decreased the length of unexplored coast of the continent.
During World War II Byrd served on the staff of the chief of naval operations and, among other duties, evaluated Pacific islands as operational sites. After World War II Byrd was placed in charge of the U.S. Navy's Operation High Jump. This Antarctic expedition, his fourth, was the largest and most ambitious exploration of that continent yet attempted and involved 4,700 men, 13 ships (including an aircraft carrier), and 25 airplanes. Operation High Jump's ship- and land-based aircraft mapped and photographed some 537,000 square miles (1,390,000 square km) of the Antarctic coastline and interior, much of it never seen before. Byrd flew into Little America from the deck of the aircraft carrier Philippine Sea north of the ice pack, about 700 miles (1,100 km) from the camp. He made a second flight over the South Pole and took part in several other flights.
In 1955 Byrd was made officer in charge of the United States' Antarctic programs and became the senior authority for government Antarctic matters. In this capacity he helped supervise Operation Deep Freeze, a major scientific and exploratory expedition sent to the Antarctic under navy auspices as part of the program of the International Geophysical Year (1957–58). Byrd accompanied the expedition aboard the icebreaker Glacier and took his last exploratory flight over the South Pole on Jan. 8, 1956.
Byrd's accomplishments
Byrd was one of the world's foremost aviators and displayed extraordinary gifts in organizing successful expeditions to Antarctica. His major achievement was to apply the airplane, radio, camera, and other modern technical resources to these polar explorations. His five Antarctic expeditions made progressively greater use of ski-planes, ship-based seaplanes, and even helicopters (in 1946–47) to transport men and equipment and to carry out systematic reconnaissance and mapping programs using aerial photography. The expeditions yielded a wealth of new information about the continent, and operations High Jump and Deep Freeze in particular were milestones in the history of sustained, permanent scientific polar research. The aerial sextant and wind-drift instruments that Byrd invented in the years following World War I considerably advanced the science of aerial navigation and were of great use in his own explorations.
Byrd wrote several books about his adventures. His first book, Skyward (1928), contains descriptions of his 1928–30 expedition to Antarctica, his flight to the North Pole, and his flight across the Atlantic. Little America (1930) is an official account of his aerial exploration in the Antarctic and his flight to the South Pole, and Alone (1938) describes his experiences at Bolling Advance Base. Byrd was extremely competent in public relations, and his expeditions were surrounded by a glare of publicity that made him a national hero and an internationally famous figure.


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L'Occitane's best selling Shea Butter Hand Cream is a super smoothing synergy of 20% shea butter, honey and sweet almond extract that's been blended with the light and alluring aromas of jasmine and ylang-ylang essences.
Inviting even the most hard working hands to a fresh beginning, L'Occitane Shea Butter Hand Cream smells delicious as the silky treatment glides on, miraculously absorbing into the skin. Help heal and protect dry or dehydrated skin as anti-oxidizing vitamin E helps nourish.
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L'Occitane Shea Butter Soap - Verbena (250g)
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L'Occitane Cherry Blossom Hand Cream 75ml
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Have been used this hand cream for year, cannot find a better hand cream than this. I have been wash my hand all the time, so my hand get dry so quick and I don't like to wear glove when I wash dishes, but I always put this in my bag and use it when ever I need.Love it
This shea butter hand cream is an excellent product. I have a problem with dry skin because of medication and this is the only hand cream that has worked for me. I only need to use it morning and night to get fabulous results - a little goes a long way. My hands were extremely dry but no longer. The shipping was brilliant - fast and great service - keen price too. Will definitely be using Look Fantastic again.
Perfect for winter months smells great non greasy and my children use it too!
My Auntie got me into using Loccitane Hand cream, and this one is the best one by far, the original cream with 20% Shea butter. You don't need very much of this cream in order to cover your hands. It smells clean, a bit like talcum powder, which is nice. It is a rich thick cream but does absorb quite quickly considering. The bottle is perfectly fine to use as all you need to do is start squeezing the cream out starting at the base of the tube, if you squeeze from the top it's bound to be a challenge to get it out of the tube. I think having the metal tube is easier, plastic tubes drive me mad when you reach the bottom, but with the metal tube you squeeze and it stays squeezed :) this cream really helps with dry skin, but using a cuticle oil with it is probably the best option if someone has extremely dry skin that's cracked. You can't expect miracles from a hand cream alone. But this cream is by far the closest to it :)
Have used for several years, great value and excellent smell.
This feels enriched but not too sticky, is fast acting and leaves a sheeny clear pearlised effect. The scent is on the sweet baby powder side.
Excellent hand cream. Would prefer if product was in jar as it would be easier to use especially when reaching end of tube.
For it's cold outside now the hand cream is not soft as the one I used before,however the smell is very excellent,I like it very much.After using it for three or four weeks,I found my hands seem much whiter and brighter which surprise me a lot.Besides the delivery is fast too,it takes only 15 days to arrive at my company in China.
i tried so many hand creams, but this cream is five star cream!!!!!!!
L'Occitane Shea Butter Hand Cream is the best hand cream I've ever used.
L'Occitane Shea Butter Hand Cream is the best hand cream I've ever used. It can keep the skin soft and not looking cracked. And I like its smell.
I have used L'Occitane Shea Butter Hand Cream and this cream is very useful for protecting my hand. Highly recommend.
This L'Occitane Shea Butter Hand Cream is the best hand cream ever - I always come back to it.
This L'Occitane Shea Butter Hand Cream is easily absorbed and a great treatment for outdoor hands. Very luxurious feel. Great value as a little goes a long way.
This L'Occitane Shea Butter Hand Cream is a lovely product that leaves your hands feeling soft and moisturised all day xxx
I have unbearably dry hands, so bad that I get little splits in the skin around my nails which are so painful (think paper cuts!). L'Occitane Shea Butter Hand Cream is the only cream that has helped me. I need to apply it 2 or 3 times a day but it's such a large tube that it still lasts ages. This is unbeatable!
Fabulous product it is a desert island cream, hands feel like silk after using this cream!
All the descriptions I've read about this L'Occitane Shea Butter Hand Cream product say that it is not oily and absorbs easily but I found it to be exactly the opposite. It leaves a horrible sticky residue on the skin and as far as I can see does nothing to moisturise the skin or nails. It is also very difficult to squeeze out of the tube and I think would benefit from being in a plastic tube as opposed to the metal one it's in. Sorry but in my opinion it is a very disappointing product.
For me this L'Occitane Shea Butter Hand Cream is one of the best I have used. As an older woman, I try to keep my hands frequently creamed in an attempt to keep them from giving away my age. This cream just glides on and leaves you hands feeling silky smooth. I love it! The 30ml size is really handy to keep in your handbag, for use any time.
L'Occitane Shea Butter Hand Cream is my favourite for my very dry hands, lovely and rich, but quickly absorbed.
L'Occitane Shea Butter Hand Cream (150ml) is simply the best hand cream ever. It may seem expensive to buy but a little goes a long way so one tube should last over a month. I'm even using it more than once every day. It helps your nails as well.
I have tried most hand creams and nothing beats L'Occitane Shea Butter Hand Cream (150ml).
A really rich cream that soaks in well and nourishes your skin. I use it at night before going to sleep, it's probably a bit too greasy for use during the day.
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This is excellent, the best there is.
This is absolutely the best hand cream I have ever used (and i've tried more than a few!!!). It is a thick rich cream without being greasy, and it works great even when my hands are feeling the effects of harsh winter weather.
This gorgeous hand cream feels absolutely heaven on dry hands and keeps them soft and chap free, it also helps that it smells AMAZING, I can't get enough of it!
The best hand cream I have ever used for sure. I'm a huge fan of L'Occitane products and would certainly recommend this to everyone.
I love this product. Not only does it look after my hands, but also my nails.


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Chronic Pain Center - Amarillo, TX
Amarillo Pain Management Physician Doctors for Chronic Pain
Type of Physician: Pain Management Physician
What is a Pain Management Physician?
An interdisciplinary subspecialty certification by the Boards of Anesthesiology, Psychiatry & Neurology, and Physical Medicine & Rehabilitation; practitioners provide a high level of care either as a primary physician or consultant for patients experiencing problems with acute or chronic pain in both inpatient and outpatient settings, and coordinate a multidisciplinary approach toward pain management.
Specialty: Pain Management
Common Name:
Pain Management Physician Doctors in Amarillo *
Amarillo, Texas
Chronic Pain
Chronic pain facts*
*Chronic pain facts by John P. Cunha, DO, FACOE
Other Related Chronic Pain Articles
Emergency Contact for Amarillo
Nearby Amarillo Hospitals *
Plum Creek Specialty Hospital
VA Medical Center
Quail Creek Surgical Hospital
The Pavilion At NW Texas Hosp
Kindred Rehabilitation Hospital
Baptist St Anthonys Health Sys
Northwest Texas Healthcare Sys
Panhandle Surgical Hospital
Kindred Hospital
Northwest Texas Surgery Center
*Provider Directory Terms of Use:
The WebMD 'Provider Directory' is provided by WebMD for use by the general public as a quick reference of information about Providers. The Provider Directory is not intended as a tool for verifying the credentials, qualifications, or abilities of any Provider contained therein. Inclusion in the Provider Directory does not imply recommendation or endorsement nor does omission in the Provider Directory imply WebMD disapproval.


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Additional file 1.
A list of proteins identified from an isolated fraction of PSI-induced inclusions in PC12 cells by MALDI-TOF MS PMF. MS data were specifically searched for proteins by proteomic analysis.
Format: DOC Size: 180KB Download file
This file can be viewed with: Microsoft Word Viewer
Li et al. BMC Neuroscience 2010 11:95 doi:10.1186/1471-2202-11-95


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We have the Fios service. My husband is a disabled veteran and one of the few things he does is watch TV and get on the internet. Do you have a discount for the Fios plan for veterans? AT@T gives a discount to Veterans. I was hoping that Verizon would offer this. Thank you.
My husband is also a 100% disabled veteran. Does Verizon offer any kind of discount at all for a Triple Fios client? Our 2 year contract comes up in July 2012. Please get an answer to us. Thank you!
Do you offer Discounts for Disabled Veterans? I would like to find out more about this please.
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I'm 100% disabled Vet. I was told Verizon gives a Veteran Discount, but I had to go through Verizon connections. The second I get there though they ask for an Employer [which is an impossiblility], then Verizon turns around and tells me that since I don't have an employer, and since I'm residential. I can't get a discount. Since it's only through an employer.
Although I was just told that if I was using a wireless set up, I'd just give my Branch of Service and last military addr. Does that work if I use the Veteran's Administration [VA] for my disbility pay? And how does a Veteran get a bundle deal?
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Life on The International Space Station
At about 300 km above the Earth, which, in one day and one night, give a detour of about 16 times, the most famous artificial satellite ever put people in orbit – the International Space Station – home to a small group of people living and work "up there" artificial structure serving them as a temporary home. Although all group membership changes, each of its members spent only a few weeks once on board the station, the entire organization as a whole, this "flying camp" looming like colonies earth that could, someday, there is the moon or Mars – the most daring dream of visionaries today.
Before we get to have colonies on other planets or celestial bodies on the man also find available and appropriate, we have up there, an outpost of civilization on Earth. Like those - Roman soldiers who guarded the frontiers of Empire – ISS astronauts live, somehow land on the outskirts of civilization, of course, not the social sense of the word, but in the "space".
Many dreams of going there, fulfilling his dream to live in one of the most coveted professions – the astronaut – attracted by the fascination that space has on us all, and fascination with science and technology are very advanced exercise on many of us.
But once you arrive there, certainly everyday life on the ISS would temper the ardor of many, even way up there (not to mention everyday life) with high probability, would extinguish the excitement, bliss, ecstasy.
After that, at best, would remain consciousness, interest in the mission to fulfill, team spirit – that all things that help us do our job here on earth. And perhaps, as spiritual support, would remain somewhere in a corner of the mind, the idea that, however, are lucky that you are there, that participate in and contribute something important to human evolution. Otherwise … a lot of work and routine, all in difficult conditions. There, everything floats
Environment of the ISS has some special features that require special behavior. The most important of these features is micro-gravity, due to which all – people and objects – floating through the air, nothing is in place unless it has been carefully set and very simple things, like going from one point to another, personal cleaning, sleeping, eating and drinking should be made here in some way other than on earth.
Another feature of the site is limited space, which requires each concern as to not be bothered and I care not to disturb others. Astronauts have, in general, one bunk, where they themselves fit, sleeping bags, a few personal items and … so. Berths can be closed during night rest for a little peace and solitude, but comfort is still very limited.
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GARDEN CITY -- On Saturday, an Idaho horse will run the Kentucky Derby, and the big question is: Could the long shot horse from Parma win?
Les Bois owners say there's always interest at the park in the historic Run for the Roses , but of course this year, they're planning and hoping for an even bigger turnout because of that Idaho-trained, Idaho-owned horse.
The festivities start early. At 8:00 a.m. the Turf Club will open, and that coincides with Churchill's race day, Les Bois Marketing Director Melinda Nothern said.
After an early opening at the Turf Club, Les Bois' derby day will include a 2:00 p.m. post time with five live races on the track before the Kentucky Derby. The Run for the Roses will be shown on televisions around the park.
Many eyes will be on one horse, of course. The horse with Idaho ties that was trained here, owned by Boise's Larry and Marianne Williams.
It's very difficult to ever get to the derby, and to know somebody that's actually there. Guys spend a lot of money buying million dollar horses, and to find somebody you actually know, and kind of be there with them in a sense is very cool, race fan Rob Dickson said.
It's a good bet a lot of Idahoans are going to be betting on the number 7, Rousing Sermon . After all, if that horse won, betters say they wouldn't want to be an Idahoan who doubted.
He's not going to beat me. I'm going to make sure I have him in my tickets. Absolutely, Dickson said.
In addition to owning a derby horse, Larry Williams co-owns Treasure Valley Racing with four others, including Jim Grigsby.
I know they're excited. They took a large group of people back there that's probably still swelling. I think he's got 40 or 50 employees, friends, family back there and I can't imagine turning for home what that would feel like, but his heart will probably be outside his chest, Treasure Valley Racing Co-Owner Jim Grigsby said.
And at Les Bois, when the famous fastest two minutes in sport is up -- live racing will be back on the track with five more thoroughbred and quarter horse races.
We encourage everybody to put on their Kentucky Derby hats and join our contest [edit] We're going to have a great day of racing, Nothern said.
The Turf Club opens at 8:00 a.m. The gates open at noon, and live racing starts at 2:00. The Kentucky Derby is scheduled to begin just before 4:30 mountain time. Live racing at Les Bois will pick up again right after that.


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About Schools in Point Baker, AK
Contact a Coldwell Banker® real estate agent to learn more about the schools and school districts in Point Baker, AK.FIND AN AGENT
Point Baker, Alaska is located in Prince of Wales-Hyder Census Area. Nearby cities and towns include Port Protection, and Whale Pass. Point Baker is a rural community with a population of 15. The median household income is $22,499. In Point Baker, 42% of residents are married, and families with children reside in 0% of the households. Half the population of Point Baker commutes 7 minutes or less to work, with 0% of residents holding white collar jobs and 0% residents holding blue collar jobs. The median age of homes in Point Baker, AK is 15 years, with 36% of those homes owned, 7% rented, and 57% not occupied.
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This is part two of a two-part interview. Part one was published on texasmonthly.com yesterday. A condensed version of the entire interview will be published in the June issue of Texas Monthly. The interview has been lightly edited for clarity and length.
JAKE SILVERSTEIN: So let's talk about the Framework [for Advancing Excellence]. It's a document, written by the chancellor, that outlines a series of specific goals, from increasing the number of degrees conferred to lowering financial impact, and even touches on some smaller things like space utilization and computational power. But what are the larger goals of the project? What is the framework trying to do for the system?
GENE POWELL: There are problems in higher education across America: cost, accessibility, tuition, fees, teaching loads, utilization of space. So I appointed two task forces the first day I became chairman, one on online learning, chaired by Regent Hall, and one on excellence and productivity, chaired by Regent Pejovich. Now, these two task forces had presidents, regents, other people in the system on them, and the chancellor was on them too. Over the spring of 2011, they talked about everything in the world, and they brought in all kinds of experts. They had about twenty meetings, and they put in about two thousand man-hours. In late May the chancellor came to me and he said, "Chairman, I have had an epiphany. I think I can see an action plan, and I think I can use almost everything that the two task forces have generated. Your plan was for each task force to write a report to the board and the board would hand it to me and I would go work on it. I don't think we can wait for that. I now know enough that I can go right to writing the action plan." So we gave him permission, and he gathered together his staff, they went on a retreat, and they wrote the first draft of the framework. They then brought it to me, and he and I spent a day going over it. He then took it to the regents. They reviewed it, gave him input, he then took it to the presidents, they all reviewed it, gave their input, and all signed off on it. Then he presented it on August 25, 2011. The room was packed, with both supporters and naysayers. We had all the presidents there. The chancellor did an almost one-hour presentation. I then asked a couple of the presidents to stand up and tell us what they thought about the framework. The one I remember the best is John Mendelsohn, who was president of MD Anderson [Cancer Center] at the time. He stood up and said, "I am so impressed with this piece of work, this is not just a framework for Texas, this is a framework for higher education and medical education across America."
This framework is not simply a report. It's a roadmap to action that has been embraced by the National Higher Education Association, by the UT presidents, by Chambers of Commerce and business groups, by the U.S. secretary of education, by the vice president and president of the United States. Did you know the chancellor has been invited to the White House twice? Once he visited with President Obama and [Education] Secretary Arne Duncan, and once with Vice President Biden. The president wanted to know, "How are you guys in Texas accomplishing all that you're accomplishing? We want to know how you're doing it." So the chancellor went up and told them. And then they invited him back. And they've called him a number of other times. He told me that he and Arne Duncan spoke at the National Hispanic Chamber here a month or so ago, and Duncan came up and said, "You guys are my heroes. We consider you the trendsetter across America." He said, "Don't let those people in Austin get you down." You know, it's very interesting that a board of nine regents that are all Republicans would be castigated at home and applauded in the Democratic White House.
JS: You said you consider the past two years at UT to be the most productive 24-month cycle ever in higher education in American history. That's a bold claim. So make your case.
GP: We've never seen this big of a productivity period, and we've never seen this big of a paradigm shift ever.
JS: When you say paradigm shift, you mean at the UT System or in American higher education?
GP: I mean at the UT System.
JS: Well, explain that, that's interesting.
GP: Okay, so we've had two things come out of the framework. First, we've had these capital investments, huge capital investments and commitments that the board has made. I don't think we've ever seen this level of capital commitments. Then we've got organizational changes in higher education, and I'm going to give you—this'll take a few minutes, but I'm going to give you my little top list of the two groups. So first, let's talk about those capital improvements. We've got a new medical school in Austin. The regents committed $250 million over ten years. The citizens of Austin voted to tax themselves. There's not been a new medical school created at an AAU [Association of American Universities] institution in 37 years. There's a university in South Texas that will begin next year with 28,000 students. It'll open its doors as the second-largest Hispanic-serving institution in America. When was the last time you heard of anybody forming a brand-new university in one of poorest regions of the state? Then we add a medical school to it, and we've committed $100 million over the next ten years to that medical school. That's two medical schools being formed in one year when the last one at an AAU school was 37 years ago. Then the board passed the Strength in Numbers Initiative. We believe that as revenues from the state go down, philanthropy


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Cover Girl Lash Blast Fusion
797 reviews
58% would repurchase
Package Quality: 3.7
Price: $$
Package Quality: 3.7
Price: $$
INGREDIENTSWater, Glyceryl Stearate, Ammonium Acrylate/Acrylamide Copolymer, Disteardimonium Hectorite, Propylene Glycol, Stearic Acid, Alcohol Denatured, Copernicia Cerifera (Carnauba) Wax (Carnauba), Triethanolamine, Synthetic Wax, Acrylates Crosspolymer, Lecithin, Propylene Carbonate, Polyethylene, Oleic Acid, Benzyl Alcohol, Nylon 6, Ascorbyl Palmitate (Vitamin C), Tocopherol (Natural Vitamin E), Glycerin, Panthenol, Glycine Soja Oil (Soybean), Simethicone, Xanthan Gum, Silica, Ethylparaben, Sodium Laureth Sulfate, Phenoxyethanol, Methylparaben, Propylparaben, Trisodium EDTA, May Contain:, Ultramarines, Black (CI 77499), Iron Oxides
on 12/29/2010 1:06:00 PM
Age: 25-29
Skin: Very Oily, Fair, Not Sure
Hair: Brunette, Straight, Other
Eyes: Blue
love this stuff! i tried the length one and it was boring, so i went right back to this :) it makes my lashes look very dramatic, its very black and it makes them look thick and long.
on 12/28/2010 10:00:00 PM
Age: 19-24
Skin: Acne-prone, Fair, Not Sure
Hair: Blond, Other, Fine
Eyes: Green
This has become my new staple! I was using last blast volume until this came out, which answered my prayers. It combines the volume and length formulas into one, essentially. I love it! Before this, I used Great Lash, but I much prefer the brush on this one, it seperates my lashes and provides and even coat of the mascara to all of them. I don't even find it necessary to curl my lashes. And it doesn't look cakey, it doesnt flake off unless you rub your eyes, it doesnt smudge easily. LOVE IT! :)
on 12/21/2010 11:39:00 PM
Age: 19-24
Skin: Combination, Fair, Not Sure
Hair: Brunette, Other, Other
Eyes: Brown
This is just meh. I bought this and the orange tubed lash blast for comparison and I just gotta say the orange tube is so much better. This is just average but the last blast volume deserves its hype, overall in the future I would skip this and go for the original orange tube which has become an hg product for me.
on 12/16/2010 9:40:00 PM
Age: 18 & Under
Skin: Acne-prone, Fair-Medium, Not Sure
Hair: Brunette, Kinky, Coarse
Eyes: Brown
First off, this mascara smelled HORRIBLE from the moment I opened it. I'm not sure if it's just me but it smelled as if I had been using it for months and it had gone bad. It's an okay mascara, nothing special. I already have long and thick lashes but I was on the hunt for a mascara that made them really stand out, this isn't it. I had to put on coats and coats of it for it to be noticeable and the very black isn't nearly dark enough. However, I do like the tube and the brush, it didn't clump my lashes. It also didn't flake or smear. I still won't be repurchasing it though, on to the next one!
on 12/15/2010 10:11:00 PM
Age: 18 & Under
Skin: Dry, Fair-Medium, Not Sure
Hair: Brunette, Wavy, Medium
Eyes: Green
I'm not too sure if I like this mascara or not yet. It's the same packaging as the other lashblasts, just purple instead of orange. What I don't like is that there isn't a waterproof version, or if there is I can't find it anywheree! This is a pretty good formula, what I really hate is that it doesn't hold a curl and by the end of the day my eyelashes look very black, but also very flat and straight. Until they make a waterproof version I don't think I'll repurchase it, and just stick to my Lashblast volume!
on 12/15/2010 9:43:00 PM
Age: 19-24
Skin: Combination, Fair-Medium, Neutral
Hair: Brunette, Straight, Fine
Eyes: Brown
It didn't really volumize my lashes, not like the regular lashblast. It did lengthen my lashes a bit. I will keep using it until it dries out. Overall I will stick to the regular lashblast volume.
on 12/15/2010 9:57:00 AM
Age: 19-24
Skin: Acne-prone, Fair-Medium, Not Sure
Hair: Brown, Other, Other
Eyes: Brown
I didn't get the volume I wanted out of this mascara, and it always uncurls my lashes. I normally don't have a problem with the hold of my curl, especially with the original orange Lash Blast. I've also never had a problem with clumping on the old Lash Blast unless I've had the mascara for more than 5 months.
My eyelashes were a little longer looking but that's it. I was looking for volume and length and I get that from the original Lash Blast.
on 12/15/2010 9:30:00 AM
Age: 25-29
Skin: Combination, Fair, Cool
Hair: Blond, Straight, Fine
Eyes: Blue
I love this mascara! I saw it on a blog somewhere and ran out to buy it. I hate spending lots of money on mascara because I have long lashes to begin with. I just like something that defines and thickens them more. I love the brush. I feel that this has never clumped on me too terribly and I end up using it more than my other mascaras. Overall, it really is a fantastic mascara and has not ever failed me. I'm not exactly a "mascara junkie" but I've tried quite a few and I never stick with the same one, except for this one. I've repurchased it about two additional times!
on 12/7/2010 11:28:00 PM
Age: 25-29
Skin: Combination, Fair-Medium, Neutral
Hair: Black, Straight, Medium
Eyes: Black
I like this much better than the original Lash Blast (esp b/c it does not make them feel &look spidery as the first one did). It didn't clump, managed to coat my lashes evenly. The colour could use some darkening. I felt that their Black wasn't black enough. For me, it is no where near my HG mascara -Maybelline's Colossal.Whenever I purchase a new mascara, I wear Colossal on one eye and the new one on the other. While my ever reliable Colossal managed to make my lashes thick with just one swipe, the Fusion needed like 6 coats to make my lashes have volume. I don't think I'll repurchase.
on 12/3/2010 4:50:00 AM
Age: 19-24
Skin: Combination, Fair, Not Sure
Hair: Brunette, Other, Other
Eyes: Brown
This is my go to mascara. I have had very black and black. Both worked well. I love the Lash Blast Volume brush, and this is the same. I have no problems using the large brush, and can get mascara all the way to the outer and inner corners. It goes on evenly when I start at the base of my lashes and wiggle the brush back and forth to the ends. I find it does add length, and volume. Like the regular Lash Blast, it's a bit hard to do a second coat after it is dry, or a bit tacky. But, that's fine with me. I do quite a few passes while it dries. I also curl my lashes before and after I apply.
Popular Mascaras


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Allan Rayman - New $h!t
Artist: Allan Rayman
Producer: Moose Beats
Album: H.O.H.W.
Avg Rating: 4.4 ( 11 votes )
Some song titles have long backstories or secret meanings. Allan Rayman, however, prefers to give his cuts straightforward names and let his music do the talking. New $h!t is the newest (duh) and final release off of the T-Dot native's forthcoming mixtape, and finds him once again linking up with go-to producer and project collaborator Moose Beats. Moose's ambient synths and crashing drums are perfectly matched to Rayman's unique vocal approach. Allan's gritty, sung-rapped delivery fuses hip-hop, R&B and even a dash of rock. While he fluctuates between the various styles in his arsenal, his transitions are natural and seamless, making the hodgepodge approach sound very effective. If you want some more New $h!t from Rayman, then be on the lookout for his H.O.H.W mixtape, which will be released in June via The DJBooth.
P.S. If you have a nice set of headphones, I HIGHLY recommend using them for this cut.
Allan Rayman DownloadsR&B/PopIndieAlternative
Written by Lucas G. on May 30, 2013
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|The Royal Silver Crown Bearings features a high quality design that's made to give you the smoothest, fastest and stable ride.


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30 Chauncy St ( )
Mansfield, MA 02048-1958
30 Chauncy St ( )
Mansfield, MA 02048-1958
March 2, 20093.0
The food here is wonderful but I have to rate it only three stars because of the overcrowded, strip mall ambience. An overhaul of the restaurant interior would definitely get a higher rating.
There are other excellent plates available from the traditional fisherman's platter and boiled lobster to a great Grilled Salmon Oscar topped with lobster meat, asparagus and béarnaise sauce also the Halibut topped with citrus salsa is quite good.
Fresh Catch has become a local chain in the metro south region. But the food is the best at Mansfield although the ambience is better at the Attleboro location (which used to be a bar fly lounge).
February 18, 20111.0
Food was just so so and overly priced, I wish that I never went there. My fried platter had a burnt tast to it so I sent it back. They
gave me the second one and it still had the same problem.
They did not take it off the bill…..Thieves
January 13, 2015
ljross there is so much more to your story. #don'tbelieveallreviews
May 23, 2012
Terrible!\r Kitchen is filthy\r Fish is sold after spoiling and being washed in bleach\r Half the shellfish is sold dead.
July 29, 2011
The experience with Fresh Catch did not start off great. We were supposed to go to their location in Easton, but when I called there to ask about their lobster special and if I could order their lobster tails as a meal, I was told they did…
These dishes from the Fresh Catch Seafood and Cafe menu are contributed by Menuism users directly, as part of a restaurant review, or as part of an image upload.