text:
Effort to make farm profitable
The Aralam Farming Corporation (Kerala) Limited is planning for product diversification and nursery expansion to make the farm profitable.
K.P. Mammootty, the newly appointed Managing Director of the corporation, said that the farm would start coconut oil extraction as part of the product diversification programme.
The farm has 315 ha of area under coconut crops, next only to cashew which is spread over a total extent of 594 ha. The coconut oil extraction unit is already under implementation and the project will be completed shortly. The initial capacity of the unit is extraction of 5,000 nuts per shift and the annual sales turnover is projected as Rs.1 crore.
The company incorporated under the Companies Act 1956 after the entire 3,500 hectares of the farm established by the Central government in 1970 with the assistance of the erstwhile Soviet Union was subsequently taken over by the SC & ST Development Department of the State government for rehabilitation of the Adivasis. While half the area of the farm was allotted for the rehabilitation, the remaining half was retained as the farm under the newly incorporated company.
Dr. Mammootty said that a project for making soft drinks from tender coconut water was also in the pipeline. As the farm is known for its quality planting materials, steps were under way for the expansion of the nurseries.
The farm produces high-yield cashew seedlings, and it has a stock of one lakh saplings.
Farm tourism
Precision farming of cucumber, capsicum and chilli is being planned in a small-scale in the farm, he said adding that vegetable seed production is also being planned.
The farm has total area of 1,466.07 ha under different crops like coconut, rubber, cocoa, cashew, areca nut, among others. As part of diversification of its activities, the farm will also focus on farm tourism, promotion of tribal arts and culture and hi-tech marketing.
As a first step, the company has already started producing quality honey as a brand product of the company.
Wildlife menace
Dr. Mammootty, who was the head of the Pepper Research Station at Panniyur before his new assignment, said that a major problem the farm has been facing is the wildlife menace.The estimated annual loss on account of this problem is Rs.80 lakh. While monkeys are a major problem in the farm, crops are destroyed by elephants as well. Electric fencing along the sensitive areas, construction of walls along the forest boundary are among the solutions considered to end the menace, he said.
If the damage to the coconut from the wildlife menace could be contained, the farm could generate an additional revenue of Rs.633.9 crore over five years, he noted.
To start coconut oil extraction Soft drink project in the pipeline
To start coconut oil extraction
Soft drink project in the pipeline


text:
Pokemon X
This is a split board - You can return to the Split List for other boards.
While i like the idea of Megaevolving i think is badly implemented.
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-Just one Megaevolving per battle (why?)
- Just a small number of pokemon have it (most of those are popular and already overpowered pokemon, how does that make a balance)
- No risk, or probably no reason not to use them (then why are they temporary?)
How i think Megaevolutions should work (may need some assistance from you guys)
- Megaevolutions should have a risk or reason not to use them (for the sake of balance and strategy)
Examples: Losing a turn, losing some HP while using it or moves use 2PP instead of one.
- More Pokemon that are weak competitively should have Megaevolutions ( For the sake of balance)
- i dont see why just one Megaevolution for battle, i hope the game explains this.
- i like that pokemons have two Megaevolutions, because that makes the pokemon unpredictable and opens for even more strategy options.
I expect your comments guys.
Sorry for my grammar, I'm typing on Ipad.
So you wouldn't mind going up against Mega Mewtwo Y, Mega Charizard X, Mega Venusaur, Mega Garchomp, Mega Lucario, and Mega Blaziken on the same team?
1. If theres more than one mega evolution for battles, whats the point of competitive battling then?
It will just turn into a mega evolution fest
2. I agree more pokemon should have mega evolutions priority going to some of the fully evolved pokemon that are not that good for competitive play?
3. Why should there be a risk? The different is that yes they get a buff, but they cant use any other item.
For example Mega mewtwo Y is actually only as good just faster then regular mewtwo. Infact Mewtwo with lifeorb has about 20 extra Sp.A points than MMY at a cost of course
Well the 1 per battle makes very much sense if it does indeed not have any risk to using it....i mean..otherwise you would use it every, single, time. Or something..
Strip the flesh! Salt the wounds! *Manical laughter*
It seems more of a cosmetic feature for x and y. Maybe next time they'll think balance wise and give pokemon that need buffs a mega form.
Then again i dont play competively and as long as dragonite has one and its cool, I have no complaints.
(I like the lose two pp per move idea though)
XBL- InFamus Shadow
So if the devil wear Prada, Adam Eve wear nada, I'm in between but way more fresher.
ShadowMaster684 posted...
So you wouldn't mind going up against Mega Mewtwo Y, Mega Charizard X, Mega Venusaur, Mega Garchomp, Mega Lucario, and Mega Blaziken on the same team?
You are right, but.. That's because there aren't many Megaevolutions yet and... Most pokemon that have them are already overpowered or like Smogon would say.. Overused.
Sorry for my grammar, I'm typing on Ipad.
For having one mega at a time, the point is he is that special pokemon you have an amazing bond with (requires max friendship). Its why they chose super popular pokemon, it isnt for the sake of balance, its more so people would be more on board with the idea. Looking at it that way, makes it really cool and thematic.
Most of the Pokemon were NEVER going to get an evolution.
Legendaries, and third stage forms. That's why they are temporary. Sure a decent amount of second stage Pokemon and stand alones do too, but that just means they may have been ignored if they didn't get a megaevo.
Either way "Why so few" : Probably to implement more next gen.
Only insecure and ignorant people try to debase someone online based on their username.
I think it is actually pretty well implemented from what I've read, and I really don't even like the idea of Mega Evolutions. At the very least I'd prefer a lot of the obsolete Pokemon from Gen I who suffered from poor stat distribution get Mega Evos before things like Garchomp and Lucario... but nevertheless. The only one Mega Evolution is a great idea to put some strategy into it. It also makes the Pokemon who don't Mega Evolve not suffer at all. It'd be hard for a normal Pokemon to compete in a game chock full of Megas.
Not to mention the loss of an item in exchange for incredibly boosts is a fair trade off. You can't just blindly make your Pokemon super strong, you need to consider which one is worth Mega Evolving and what type of style you are going for.
I thought I read that the storyline is based around finding out the meaning and origin behind Megas. Maybe they'll cover why only some pokemon get Megas in game at some point.

subset: commoncrawl


text:
A method is provided for forming a landing pad of a semiconductor integrated circuit, and an integrated circuit formed according to the same. A plurality of conductive regions are formed over a substrate. A polysilicon landing pad is formed over at least one of the plurality of conductive regions. After the polysilicon is patterned and etched to form the landing pad, tungsten is then selectively deposited over the polysilicon to form a composite polysilicon/tungsten landing pad which is a good etch stop, a good barrier to aluminum/silicon interdiffusion and a good conductor.
1. The structure of a portion of a semiconductor integrated circuit formed at a surface of a body, comprising:
an active region in a substrate;
a doped polysilicon landing pad overlying a portion of the active region and electrically contacting the active region, a portion of the doped polysilicon landing pad separated from an adjacent conductive element by a distance of between approximately 1000 and 5000 Å; and
selectively deposited tungsten overlying the polysilicon to form a composite polysilicon/tungsten landing pad.
2. The structure of claim 1, further comprising:
sidewall spacers on the ends of the polysilicon landing pad.
3. The structure of claim 2, wherein the sidewall spacers comprise oxide.
4. The structure of claim 1, wherein the active area comprises a source/drain region.
5. The structure of claim 1, further comprising:
an oxide layer underlying a portion of the landing pad over the active area in the substrate.
6. The structure of claim 5, wherein the oxide layer has a thickness on the order of between approximately 500 to 3000 angstroms.
7. The structure of claim 1, wherein the polysilicon landing pad has a thickness on the order of between approximately 300 to 2000 angstroms.
8. The structure of claim 1, wherein the selective tungsten has a thickness on the order of between approximately 400 to 1000 angstroms.
9. The structure of claim 1, further comprising:
an interlevel dielectric layer overlying the composite landing pad having an opening therethrough exposing a portion of the composite landing pad.
10. The structure of claim 9, wherein the interlevel dielectric layer comprises BPSG.
11. The structure of claim 9, wherein the interlevel dielectric layer comprises BPSG overlying an undoped oxide layer.
12. The structure of claim 9, further comprising:
a conductive contact in the opening.
13. The structure of claim 12, wherein the conductive contact comprises aluminum.
14. The structure of claim 12, wherein the conductive contact comprises aluminum overlying a barrier layer.
15. The structure of claim 9, wherein the opening is substantially over the active area in the substrate.
16. The structure of a portion of a semiconductor integrated circuit formed at a surface of a body, comprising:
a plurality of conductive regions on a substrate;
an active region in the substrate adjacent at least one of the conductive regions;
a doped polysilicon landing pad overlying a portion of the active region and electrically contacting the active region, a portion of the doped polysilicon landing pad separated from the at least one adjacent conductive region by a distance less than a predetermined metal contact-to-gate space; and
selectively deposited tungsten overlying the polysilicon to form a composite polysilicon/tungsten landing pad.
17. The structure of claim 15, wherein at least one of the conductive regions is a transistor gate and wherein the composite landing pad overlies a portion of the transistor gate.
18. The structure of claim 17, further comprising:
oxide sidewalls along the sides of the gate; and
an oxide capping layer overlying the gate.
19. The structure of claim 17, wherein the predetermined metal contact-to-gate space is 5000 Å.
20. The structure of claim 15, further comprising:
sidewall spacers on the ends of the polysilicon landing pad.
21. The structure of a portion of a semiconductor integrated circuit formed at a surface of a body, comprising:
a gate structure overlying a substrate;
a source/drain region within the substrate adjacent a region underlying the gate structure;
an insulating material adjacent the gate structure and over the source/drain region, wherein the insulating material has a width less than a predetermined metal contact-to-gate space;
a doped polysilicon layer overlying a portion of the gate structure and the insulating material and contacting the source/drain region; and
tungsten overlying the polysilicon layer pad.
22. The structure of claim 21, wherein the predetermined contact-to-gate space is a contact-to-gate space required for a metal contact design rule and is at least 5000 Å.
23. The structure of claim 21, wherein the insulating material comprises a sidewall spacer.
This a Division of application Ser. No. 08/577,565 filed Dec. 22, 1995 U.S. Pat. No. 5,719,071.
The present invention relates generally to semiconductor integrated circuit processing, and more specifically to an improved method of forming an interconnect and landing pad structure in an integrated circuit.
Design rules are required in integrated circuit design which allow for variations in the fabrication processes to protect against catastrophic failures and to guarantee the electrical parameters of the devices; the electrical parameters being related to the physical dimensions of the features. Certain feature sizes and minimum space or design tolerance must be maintained between devices in order to maintain the electrical integrity of the devices. Shapes and sizes may vary as a result of, for example, mask misalignment or variations in photoresist exposure. Design rules have thus been established for the various types of material used and the particular location of the devices on the chip. For example, width and spacing rules exist for metal, diffusion and polysilicon materials as well as for contact openings such as a metal contact space to gate. Any misalignment in the formation of a metal contact, for example to a diffused region, may invade the required space between the contact and a surrounding device such as the polysilicon gate. Thus, reduction in the minimum required spacing will not necessarily meet the design tolerance for a given type of material a nd location and will not insure the devices' electrical characteristics.
To avoid the problems caused by a metal contact when misalignment or other spacing problems occur between, for example, the metal contact and gate, a landing pad may be formed between the metal contact and an underlying diffused region. Typically, the landing pad is formed from a doped polysilicon layer over which a silicide layer may be formed to decrease sheet resistance to tolerable levels. Due to the less stringent design rules for polysilicon for the contact space to gate, the landing pad allows for a reduction in the size of the cell and tolerates greater misalignment problems.
one problem encountered, however, with conventional landing pads is that the landing pad must be a good etch stop when etching the contact opening to the landing pad. The conventional landing pad, particularly when a silicide is formed over the polysilicon, is not a good etch stop for the contact etch. The etch chemistries used to etch the landing pad are not selective enough over surrounding oxides and the contact opening made to the landing pad must be severely narrowed by the respective etch chemistries to maintain the integrity of the contact opening.
An additional problem encountered in the field of integrated circuit manufacture, particularly with the continuing trend toward smaller integrated circuit feature sizes, is the making of high-reliability conductive electrical contacts between metallization layers and semiconductor elements, particularly contacts between aluminum and diffused junctions into single-crystal silicon. This increased difficulty is due to the tendency for aluminum and silicon to interdiffuse when in contact with one another, and when subjected to the high temperatures necessary for integrated circuit manufacturing. As is well known in the art, conventional integrated circuit process steps can cause silicon from the substrate to diffuse rather rapidly into pure aluminum in an attempt to satisfy the solubility of silicon in aluminum. The silicon exiting the substrate is then replaced by the newly formed aluminum+silicon alloy. The diffusion back into the substrate of the aluminum+silicon alloy may diffuse to such a depth as to short out a shallow p-n junction in the silicon. This phenomenon is known as junction spiking. The use of silicon-doped aluminum in forming integrated circuit metallization, while preventing junction spiking, is known to introduce the vulnerability of the contact junction to the formation of silicon nodules thereat, such nodules effectively reducing the contact area, and thus significantly reducing the conductivity of the contact.
The doped polysilicon landing pad with an overlying silicide has been found to be an inadequate barrier to the aluminum/silicon inter diffusion problem. Accordingly, recent advances in the field of integrated circuit fabrication have been made by the introduction of an additional barrier layer at the aluminum-silicon interface. Conventionally, the barrier layer is a refractory metal material such as titanium-tungsten (TiW), or a refractory metal nitride such as titanium nitride (TiN). The barrier layer is formed at the contact location so as to be disposed between the silicon and the overlying aluminum layer. The additional barrier layer inhibits the inter diffusion of aluminum and silicon atoms, thus eliminating the problems of junction spiking and silicon nodule formation noted above.
While a barrier layer eliminates the problems associated with aluminum in direct contact with silicon, it is difficult to form a uniform barrier in contact openings that have a large aspect ratio such as that in contact with a landing pad. Even with today's deposition technology including chemical vapor deposition (CVD) and collimated sputtering, it is often hard to uniformly coat all sides in an opening, particularly in the corners of the openings. If the barrier layer is not thick enough, pin holes may result from inadequate coverage, resulting in the junction spiking problem noted above, to occur.
It is therefore an object of the present invention to provide a method of forming an integrated circuit with a landing pad that is an adequate etch stop layer.
It is a further object of the present invention to provide such a landing pad that is a good barrier to aluminum/silicon inter diffusion.
It is yet a further object of the present invention to provide such a landing pad that reduces or eliminates the need for an additional barrier layer.
It is yet a further object of the present invention to provide such a landing pad that tolerates misalignment of subsequently formed contact openings.
Other objects and advantages of the present method will be apparent to those of ordinary skill in the art having reference to the following specification together with the drawings.
The invention may be incorporated into a method for forming a semiconductor device structure, and the semiconductor device structure formed thereby. A plurality of conductive regions is formed over a substrate wherein at least one conductive region comprises an active area in the substrate adjacent the conductive region. A doped polysilicon layer is formed over the integrated circuit, patterned and etched to form a polysilicon landing pad over the active area and a portion of the adjacent conductive region. Tungsten is then selectively deposited on the polysilicon landing pad to form a composite doped polysilicon/tungsten landing pad. A dielectric layer having an opening therethrough is formed over a portion of the landing pad wherein the opening is substantially over the active area. The composite landing pad is a good barrier to aluminum/silicon interdiffusion, provides a good etch stop and is a good conductor to the underlying active area. The distance between adjacent devices and the landing pad is minimized while maintaining the design rule criteria for submicron geometries using a polysilicon landing pad.
The novel features believed characteristic of the invention are set forth in the appended claims. The invention itself, however, as well as a preferred mode of use, and further objects and advantages thereof, will best be understood by reference to the following detailed description of illustrative embodiments when read in conjunction with the accompanying drawings, wherein:
FIGS. 1-3, 5-6 and 8-9 are cross-sectional views of the fabrication of a semiconductor integrated circuit according to one embodiment of the present invention.
FIGS. 4 and 7 are cross-sectional views of the fabrication of a semiconductor integrated circuit according to alternative embodiments of the present invention.
Referring now to FIGS. 1-3, a method of fabricating an integrated circuit to have a landing pad according to a first embodiment of the present invention will now be described in detail. The cross-sections of FIGS. 1-3 illustrate this method as a portion of an overall process flow for fabricating the integrated circuit. As will be apparent to those of ordinary skill in the art, the partial process flow to be described herein may be applied in the fabrication of many types of integrated circuits, in which the full process flow will include many other process steps conventional in the art.
FIG. 1 illustrates, in cross-section, a portion of an integrated circuit that has been partially fabricated. According to the example described herein, the present invention is directed to forming a landing pad between a metallization layer such as aluminum and a conductive region such as a doped semiconductor region in single-crystal silicon, as such contacts are generally the most sensitive to the misalignment and design rules for spacing addressed by the landing pad and the spiking and nodule problems addressed by the barrier layer. It is contemplated, of course, that the present invention will also be applicable to the formation of other contacts, including, for example, contacts between metallization and polysilicon.
The structure of FIG. 1, includes silicon substrate 10. Various active devices may be formed on or in the surface of the substrate as well as overlying any field oxide regions which may be formed to separate devices. In a particular application, substrate transistors 12 and 20 are shown having gate oxide layers 14 and 22, gate electrodes 16 and 24 overlying the gate oxide layers and typically formed from a first layer of polysilicon. As is known in the art, typically gate electrodes 16, 24 will have sidewall spacers 28, lightly doped drain regions 30 and source and drain or diffused regions 32, 34 shown for transistor 12 and diffused regions 34, 38 shown for transistor 20. Diffused or active region 34 may form a shared contact 36 between devices as is known in the art. In a particular application, diffused region 34 forms the source of one transistor and the drain of the adjacent transistor. Transistors 12, 20 may also have a silicide or polycide 40, 42, overlying the gate electrodes 16, 24 to reduce the sheet resistance of the gate electrodes. FIG. 1 also includes interconnect 48, shown having an interconnect line 50 overlying a field oxide region 11, which is typically formed from the first layer of polysilicon, which would also form the gate electrode of another transistor outside the plane of the drawing. Interconnect 48 typically will have sidewall spacers 28 and may have a polycide or silicide layer 52 as described above with reference to transistors 12, 20.
The diffused or active regions 34, 38 are formed of opposite conductivity type from that of substrate 10. For example, substrate 10 may be lightly doped p-type silicon and diffusion regions 34, 38 may be heavily doped n-type silicon. Of course, as noted above, other structures (with the same or opposite conductivity type selection) may alternatively be used; for example, substrate 10 may instead be a well or tub region in a CMOS process, into which diffusion or active regions 34, 38 are formed. In the example of FIG. 1, diffusion 34 is bounded by both substrate transistors 12, 20 and diffusion 38 is bounded by transistor 20 and field oxide region 11. In this example, diffusion 34 is very shallow, such as on the order of 0.15 microns, as is conventional for modern integrated circuits having sub-micron feature sizes. As such, diffusions 34, 38 may be formed by ion implantation of the dopant followed by a high-temperature anneal to form the junction, as is well known in the art. Alternatively, the ion implantation may be performed prior to the formation of subsequent layers, with the drive-in anneal performed later in the process, if desired.
In the preferred embodiment, transistors 12, 20 may also have a capping layer 44, 46, respectively and interconnect 48 may have a capping layer 54. The capping layer may be formed directly over the polysilicon gates or over the polycide. The capping layer is preferably an oxide or nitride formed to encapsulate the gate electrode as more fully described in U.S. patent application Ser. No. 08/331691 (Attorney's Docket No. 94-C-86/88) filed on Oct. 31, 1994 and incorporated herein by reference. The capping layer is preferably formed to a depth of between approximately 500 to 2000 angstroms over the polysilicon before the polysilicon is patterned and etched to form the gate electrodes. The capping layer may then be patterned and etched with the polysilicon to cap only the polysilicon remaining which forms the gate electrodes. The sidewall spacers may then be formed after the capping layer is formed to further encapsulate the gate electrodes and increase the tolerance for design rules and provide sufficient distance between the gate electrodes and subsequently formed conductive regions adjacent to the transistor gates.
Referring to FIG. 2, dielectric layer 56, which may be a deposited oxide or another suitable dielectric layer, is formed over diffusion regions 34, 38 and other already formed devices such as transistors 12, 20 and interconnect 48. Dielectric layer 56, formed for purposes of electrically isolating overlying conductive structures from diffusion 34 and other devices except at locations where contacts are desired therebetween, may have a thickness of between approximately 500 to 3000 angstroms.
Referring to FIG. 3, contact openings 58 are formed through dielectric layer 56, for example by way of reactive ion etching or another type of anisotropic etching; as will be apparent below, this embodiment of the invention is concerned with the formation of an overlying landing pad that is in contact with diffusion regions 34, 38 and under an overlying metallization layer subsequently formed. Dielectric layer 56 is masked in order to primarily etch only opening 58 through layer 56. If dielectric layer 56 is etched without being masked, the upper surface of the layer is vertically etched essentially at the same rate as the opening. In this case, a second sidewall oxide spacer 29, as shown in FIG. 4, is formed along the sides of sidewall spacers 28. These second sidewall spacers 29 will provide for a self-aligned contact to be made to the active or diffused regions 34, 38 and will increase the distance between the edge of the gates 16, 24 and interconnect 50 and the edge of the contact openings 58. However, the distance from the top of the gates 16, 24 and interconnect 50 to an overlying layer will depend on the thickness of the remaining capping layers 44, 46 and 54, respectively.
With reference to FIG. 3, misalignment of the contact opening 58 over the diffused regions 34, 38, such as opening over the sidewall spacers 28, may decrease the contact space between the edge of gates 12, 20 and 48 and the side of the contact opening 58. Due to any misalignment of the contact opening, effectively opening over the sidewall spacers 28 or 29 of either transistor 12, 20 or interconnect 48, the thickness of the dielectric between these devices and subsequently formed metal contacts in the openings 58 may be reduced enough such that the design rules for a metal contact space to gate are not met and device yield may thus decrease. In addition, misalignment of the contact openings 58 increases the aspect ratio of the opening, increasing step coverage problems for a metal contact. To prevent any misalignment of the openings 58 from removing the sidewall spacers, these sidewall spacers 28 may be formed of nitride. In the preferred embodiment, a conductive material is formed in contact openings 58 whereby the design rules for contact space or side of contact 58 to edge of gates 12, 20 and interconnect 48 are met while enhancing the planarization of the surface topography to allow barrier layers and metal contacts to be uniformly formed.
With reference to FIGS. 5-9, the present invention will be described following from FIG. 3. It will be appreciated, however, from those skilled in the art that this invention may be practiced with the second sidewall spacer as shown in FIG. 4. Referring now to FIG. 5, a polysilicon layer 60 is formed over dielectric layer 56 and in the contact openings 58 in contact with the diffused regions 34, 38. Polysilicon layer 60 is preferably deposited as an insitu doped polysilicon being doped with a similar dopant as the diffused regions 34, 38. In this example, if the diffused regions 34, 38 are N+, polysilicon layer 60 may be N+ insitu doped polysilicon as deposited with sufficient doping level to reduce the contact resistance of this layer and provide an adequate electrical path to the diffused regions 34,38. In this example, the insitu doping level is approximately 1020 ions/cm3 as formed. Polysilicon layer 60 will have a thickness on the order of between approximately 300 to 2000 angstroms. Alternatively, the polysilicon layer 60 may be doped after deposition, for example, by ion implantation or other suitable method. A single blanket implant may be done across the entire polysilicon layer or it may be masked in selected regions to allow for the non-selected regions to be counterdoped. Typically, doping concentrations of between 1019 /cm3 to 1022 /m3 will be achieved.
Referring to FIG. 6, polysilicon layer 60 is patterned and etched to form a conductive landing pad 62, which in this example extends into the openings 58 to the diffused regions 34, 38 and over a portion of the dielectric layer 56 adjacent the opening. Polysilicon landing pad 62 will provide for proper design rules for spacing such as that between the contact edge in openings 58 and edges of the gates 12, 20 and interconnect 48 required for smaller geometries. Some misalignment of the contact openings over the active regions 34, 38 will also be tolerated by the use of the polysilicon landing pad 62.
Once the polysilicon layer is patterned and etched to form the polysilicon landing pad, a conductive layer is to be formed over the landing pad which is both a good conductor and a good barrier, for example, to prevent aluminum/silicon interdiffusion between the substrate and an aluminum contact to be made to the substrate. In addition, the landing pad must be a good etch stop, that is, the etch chemistries must be selective between the landing pad and surrounding layers such as oxides. As noted above, refractory metal silicides typically formed over polysilicon to reduce sheet resistance are neither good barriers nor good etch stops. Polysilicon, with most etch chemistries, will etch faster than silicide. With variations in the topography across the wafer surface, when the silicide is etched, the polysilicon may also be etched in thinner regions. If the polysilicon is partially removed in certain areas, the next polysilicon etch will remove oxides underlying or adjacent to the polysilicon which have similar etch rates to that of the polysilicon. In the present application, a conductive layer is formed only on the polysilicon and is formed after the polysilicon has been etched. Thus, the etch step is simplified from a 2-layer etch to a 1-layer etch. The polysilicon is thus not overetched in the thinner regions, thereby reducing the possibility of etching the surrounding oxides.
Referring again to FIG. 6, tungsten is selectively deposited by chemical vapor deposition (CVD) to form a composite landing pad 64 comprising polysilicon landing pad 62 and selectively deposited tungsten 66. An important aspect of the present invention is the formation of tungsten layer 66 over the polysilicon landing pad 62. Tungsten over polysilicon will provide a low resistance conformal layer which will act as a good barrier to the aluminum/silicon interdiffusion problem and will act as a good etch stop. Tungsten is also a good electro migration resistant material. In addition, tungsten can be selectively deposited over the polysilicon landing pad and not the surrounding oxides. Selective tungsten deposition generally follows a two step process. It is first reduced by silicon to form a thin layer of tungsten over the polysilicon; approximately 100 angstroms. The silicon reduction is given by:
2WF6 (vapor)+3Si(solid)→2W(solid)+3SiF4 (vapor)
This reaction becomes self-limiting, that is, once the thin tungsten layer is formed, it becomes a diffusion barrier between the underlying silicon (Si), or in this case, the polysilicon and the tungsten hexaflouride (WF6) vapor. The next step is a hydrogen reduction carried out under conditions which only allow the tungsten to deposit on the previously formed thin tungsten layer. The tungsten will not form on the oxide layer 56. The hydrogen reduction is given by:
WF6 (vapor)+3H2 (vapor)→W(solid)+6HF
In the present application, it is preferable to deposit the tungsten at temperatures between approximately 200� C. to 700� C., more preferably 450� C., and within a pressure range of approximately 2-5 Torr. With a tungsten hexaflouride flow of approximately 90-100 sccm or less and an H2 flow of approximately 600 sccm or greater, the resulting deposition thickness of tungsten layer 66 over polysilicon landing pad 62 should be between approximately 400 to 1000 angstroms. After deposition, an anneal may be done at approximately 850� C. in either a nitrogen or argon ambient which should make the tungsten stable up to approximately 1000� C. during subsequent processing steps.
Referring to FIG. 7, if it is desired that no tungsten form along the ends of the polysilicon landing pad 62, a sidewall spacer 68 may be formed first along the ends of the polysilicon landing pad 62 by conventional methods. When tungsten is then selectively deposited, it will not form over the sidewall spacer 68 at the ends of the polysilicon landing pad 62. The sidewall spacers may typically be formed of oxide or nitride.
Referring to FIG. 8, subsequent process steps are shown. Reference will be made to the landing pad 64 as described above with reference to FIG. 6, however, it will be appreciated that these subsequent process steps may also follow from the composite landing pad 64 as shown with reference to FIG. 6. A second dielectric layer 70 is formed over the landing pad 64 and first dielectric layer 56. The second dielectric layer 70 may be, for example, a multi-layer film or a glass layer such as spin-on-glass or borophosphorous silicate glass (BPSG) to aid in planarization of the surface of the wafer at this stage of processing. An example of a multi-layer film may be a thin undoped oxide 72 formed under a BPSG layer 74. The undoped oxide may aid in protecting areas of the chip during subsequent processing steps and in particular will help to prevent the BPSG layer from forming directly on active areas which may not be covered by the first dielectric layer 56. The dielectric layer 70 will have a thickness dependent upon the underlying topography and may be between approximately 3000 to 8500 angstroms.
Referring to FIG. 9, an opening 76 is formed through the dielectric layer 70 exposing a portion of the landing pad 64. If BPSG is used for the second dielectric layer 70, as is known in the art, it can be reflowed to round the corners at the opening 76. Only one opening 76 is shown here to the landing pad 64 overlying active area 34 in substrate 10 for ease of illustration. It will be appreciated, however, by those skilled in the art that contact opening 76 may be formed to expose any of the landing pad locations. A barrier layer 78 may be formed under a subsequently formed metal contact in opening 76 to reduce the well known wear out failure mechanisms referred to as stress induced migration and electro migration. The thin barrier layer 78 may be a refractory metal or refractory metal nitride any may be formed by way of sputtering or other suitable method, to a thickness of about 400 to 1000 angstroms. As is known in the art, barrier layer 78 is preferably formed of titanium nitride or other suitable refractory metal nitride, or may be formed of titanium, titanium-tungsten, or other suitable refractory metal. The barrier layer may alternatively be formed of a refractory metal nitride over a refractory metal, for example, a titanium nitride may be formed over a titanium layer. The material and thickness of barrier layer 78 are selected to optimize process conditions to prevent diffusion of atoms between an overlying conductive layer and the underlying polysilicon landing pad 64. However, one advantage of the present invention, with selective tungsten now at the bottom of the contact opening, the use of a barrier layer may be reduced or unnecessary since the tungsten will reduce any risk of aluminum spiking through the landing pad into the substrate. Fewer process steps at this stage will also result if the barrier layer 78 is not required. A conductive layer is formed over the barrier layer 78 in opening 76, patterned and etched to form a conductive contact 80. Contact 80 is typically an aluminum alloy as is known in the art.
Contact 80 makes electrical connection to diffused region 34, in this example, through composite landing pad 64. Any misalignment of the width and location of the contact opening 76 over the landing pad is not as critical as the previous contact opening 58 to diffused region 34. With the landing pad formed between the contact 80 and the active region 34, the design rules for contact to gate spacing are maintained. A wider and/or more shallow contact opening 80 over the landing pad 64 may thus be formed to facilitate the deposition of a contact metal such as aluminum or other suitable contact metal. The barrier layer, if necessary, will be able to form more uniformly along the sides and bottom of the contact opening and more particularly in the corners. In addition, some misalignment of contact opening 80 over the landing pad 64 will be tolerated without invalidating design rules, such misalignment of the contact opening 80 for a metal contact not being tolerated at the diffused region 34, in this example between transistors 12, 20.
A composite tungsten/polysilicon landing pad has the advantage of enhancing conductivity while providing both a good barrier to aluminum/silicon interdiffusion and a good etch stop.
While the invention has been described herein relative to its preferred embodiments, it is of course contemplated that modifications of, and alternatives to , these embodiments, such modifications and alternatives obtaining the advantages and benefits of this invention, will be apparent to those of ordinary skill in the art having reference to this specification and its drawings. It is contemplated that such modifications and alternatives are within the scope of this invention as subsequently claimed herein.
Patent Citations
Non-Patent Citations
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text:
Leaders in Business: 06.10.07
CORPUS CHRISTI - 3818-A WOW Road
Phone: 985-6444
Company description: An emergency fire and water damage cleanup and restoration company. Cleans and dries out a flooded home or business before further damage occurs.
Hometown: Corpus Christi
Years in business: 7 years
Tenure in position: 7 years
Education: Ray High School, Del Mar College
First job: In retail at a local department store. I ended up staying in retail for the next 26 years, working my way up through the ranks and into store management. It taught me how to run a business, work with employees and service customers. Through the years I realized that I wanted to manage a business for myself instead of someone else.
Biggest career break: After surviving one more Christmas season in retail, I decided that I didn't want to go through another. I wanted my own business, and to work for myself. As my wife, Mickie, and I started looking at business possibilities, Servpro Industries was selling a franchise in the Corpus Christi area. We began investigating Servpro and decided it was a perfect fit for us. A couple of months later we were business owners.
Business turning point: There really hasn't been one specific turning point. We have watched our business grow steadily during the past seven years and have developed solid business relationships with our customers. Those repeat customers are the measurement of our success.
Business philosophy: Simple -- customer service and quality work. Listen to our customer's needs and treat them the same way we would like to be treated. Plus, all of our employees are trained and certified in the cleaning and restoration field. So whether we are trying to dry out a saturated house, or clean every inch of a smoke-damaged building to get rid of the odor, we have the knowledge and skills to provide quality work.
How would you improve Corpus Christi's business climate? My wife and I were born and raised in Corpus Christi and have seen the city grow. It's a beautiful city, but there is room for additional growth. Education is the key, and Texas A&M University-Corpus Christi and Del Mar College are here to play an important role in educating our youths. We need to try to keep those graduates here in Corpus Christi, and keep our workforce local, in order to attract new businesses to choose Corpus Christi as a location. Likewise, larger local businesses need to use the resources that already are here in Corpus Christi instead of bringing in out-of-town workforces. Whether it's through schools, or business to business, education is the key.
Compiled by Elvia Aguilar


text:
Did you know?
There are about 900 breeds of sheep in the world.
Did you know?
A specialty show is a dog show which reviews a single breed, unlike other dog shows, particularly conformation shows, which are generally referred to as "all-breed" because they are open to all breeds recognized by the sponsoring kennel club.
The Kennel Club (UK) system, which is also used by the Australian National Kennel Council[1] and in other countries, is considered the most difficult to earn a title under.


text:
Court records show Mantra pleaded guilty to three counts of failing to keep the required records and seven labeling violations.
Francis has a previous criminal record; he was arrested in March 2002, by the Bay County sheriff's office in Florida for promoting the sexual performance of a child under the age of 18, prostitution, racketeering and drug trafficking, though the trafficking charge was later dropped. He could still face prosecution in Florida in addition to the federal charges.
Previously, the Federal Trade Commission charged the "Girls Gone Wild" producers in a civil complaint for deceptive advertising for automatically shipping and billing unordered videos to previous customers without their consent.
If convicted of the tax charges, Francis could face up to 10 years in prison and $500,000 in fines.


text:
- Personal
- Health & Wellness
- Wellness and Medical Topics
- Chronic Fatigue Syndrome/Myalgic Encephalomyelitis
Chronic Fatigue Syndrome/Myalgic Encephalomyelitis
Chronic Fatigue Syndrome/Myalgic Encephalomyelitis
National Organization for Rare Disorders, Inc.
It is possible that the main title of the report Chronic Fatigue Syndrome/Myalgic Encephalomyelitis is not the name you expected. Please check the synonyms listing to find the alternate name(s) and disorder subdivision(s) covered by this report.
- Akureyri Disease
- Benign Myalgic Encephalomyelitis
- Epidemic Myalgic Encephalomyelitis
- Epidemic Neuromyasthenia
- Iceland Disease
- Raphe Nucleus Encephalopathy
- Royal Free Disease
- Tapanui Flu
Related Disorders List
Information on the following diseases can be found in the Related Disorders section of this report:
- Chronic Epstein-Barr Virus Infection
- Multiple Sclerosis
- Polymyalgia Rheumatica
General Discussion
Until the late 1980s, myalgic encephalomyelitis was thought to be a distinct, infectious disorder affecting the central, peripheral and autonomic nervous systems and the muscles. Its major symptom was fatigue to the point of extended periods of exhaustion. A group of experts studying the Epstein-Barr virus first published strict criteria for the symptoms and physical signs of chronic fatigue syndrome in 1988. This case definition was further refined in 1994.
The Fact Sheet for CFS published by the National Institutes of Allergy and Infectious Diseases of the National Institutes of Health states that "[T]oday, CFS is also known as myalgic encephalomyelitis, postviral fatigue syndrome, and chronic fatigue and immune dysfunction syndrome." ME/CFS is now recognized as part of a range of illnesses that have fatigue as a major symptom.
ME/CFS is not rare. The CDC estimates that there are as many as 500,000 persons in the United States who have CFS-like symptoms. However, the disorder remains debilitating, complex and mysterious in origin, natural history, understanding and treatment.
Usually, the signs and symptoms of CFS/ME appear after a period of time in which the individual has experienced a cold, bronchial distress, hepatitis or intestinal discomfort. Sometimes, the symptoms appear after a bout of fatiguing infectious mononucleosis. In each case, the major symptom is the sudden onset and persistence of profound fatigue. Frequently, patients describe the onset as coming after a period of intense stress.
The fatigue may last for weeks or may come and go over a period of many months. In addition to fatigue, symptoms may include headache, tender lymph nodes, muscle and joint pain, and difficulty in concentrating.
The exact cause of chronic fatigue syndrome/myalgic encephalomyelitis is not known. Researchers believe the disorder may be caused by a viral infection in association with an immune system abnormality. At one time, the Epstein-Barr virus was thought to be implicated in this disorder. However, scientists find high concentrations of Epstein-Barr antibodies (disease-fighting proteins created by the immune system in response to the presence of the virus) in some healthy people, as well as in some people with CFS/ME.
It remains unclear whether the disorder is related to some other virus, one or more environmental pollutants, immune system collapse, or one or more genetic abnormalities. The immune system fails in this disorder, but the cause of the failure is not yet clear.
Affected Populations
Myalgic encephalomyelitis appears to affect adults almost exclusively, and it occurs up to three times more often in females than in males.
Related Disorders
Symptoms of the following disorders can be similar to myalgic cncephalomyelitis. Comparisons may be useful for a differential diagnosis:
Chronic Epstein-Barr virus Infection is caused by the same virus that causes infectious mononucleosis. Although all individuals who become infected with EBV remain so for the rest of their lives, in most people, the virus becomes and stays inactive when the patient recovers from the initial bout of illness. In chronic EBV infection (CEBV), however, the virus fails to become inactive or is periodically reactivated, so that the patient is chronically or recurrently ill. Medical researchers do not understand the reason for this. Both the nature and the severity of symptoms vary from patient to patient. CEBV can be debilitating, but is not necessarily so. (For more information on Chronic Epstein-Barr Virus Infection, choose "CEBV" as your search term in the Rare Disease Database.)
Multiple sclerosis (MS) is a chronic disorder of the central nervous system which may be progressive, relapsing and remitting, or stable. This disorder is characterized by lesions that may form randomly throughout the brain and spinal cord. These lesions may prevent proper transmission of nerve signals and thus result in a variety of neurological symptoms. Mobility may be impaired and other symptoms such as vision difficulties, speech impairment, abnormal skin sensations and bowel and/or bladder control problems may occur. The exact cause of MS is not known, although researchers believe it may be caused by either an immune system abnormality, or a virus triggered early in life. (For more information on Multiple Sclerosis, choose "MS" as your search term in the Rare Disease Database.)
Polymyalgia rheumatica is a disorder characterized by pain and stiffness in certain muscle groups without causing permanent weakness or atrophy. Symptoms appear quickly and may be most severe in the mornings. Mobility may become impaired after long periods of sitting still. Pain on both sides of the body may develop, and symptoms such as fever, loss of appetite, fatigue, weight loss and depression may occur. Despite severe pain, the muscles may not show any abnormality upon examination. A form of anemia may also be present in some patients. (For more information on Polymyalgia Rheumatica, choose "Polymyalgia Rheumatica" as your search term in the Rare Disease Database.)
Standard Therapies
A diagnosis of chronic fatigue syndrome is made when a patient has severe and chronic fatigue for at least six months with other medical conditions having been excluded by clinical diagnosis. Also, four or more of the following should be present for a diagnosis: substantial reduction in short-term memory or concentration; sore throat; tender lymph nodes; muscle pain; multi-joint pain without swelling or redness; headaches of a new type, pattern, or severity; unrefreshing sleep; and feelings of dissatisfaction or depression lasting for 24 hours or more after exercise or exertion. These symptoms must be present or have recurred for six or more consecutive months, and must not have been evident prior to the onset of fatigue.
Treatment is aimed at relieving the more obvious symptoms and restoring the patient to some level of pre-existing function and well-being. Since the cause of CFS/ME is not known and the course of its development is also unknown, all treatments should be considered cautiously. Most physicians combine some of the treatment options listed below.
Pharmacologic Therapies
Caution and care are necessary in the use of drugs to relieve the symptoms of a chronic disorder whose cause is not known. Patients with diagnosed CFS may be particularly susceptible to drugs affecting the nervous system.
Nonsteroid antiinflammatory drugs may be used to relieve pain. They are generally safe when used as directed but can cause side effects.
Low-dose tricyclic antidepressants have been prescribed to reduce pain and improve sleep. Use of these drugs may also cause adverse side effects of which the patient and physician must be aware.
Other antidepressants including the serotonin reuptake inhibitors have been prescribed in doses lower than those offered to depressed patients. These drugs also must be monitored for adverse side effects.
Investigational Therapies
The Centers for Disease Control and Prevention (CDC) have released a report on the experimental use of a synthetic, immune system modifier, Ampligen, which yielded modest improvement among CFS patients. Further study is needed of this investigational therapy for chronic fatigue syndrome. The drug is expensive and not reimbursable through health insurance. Adverse side effects have not yet been well defined.
The same CDC report suggests that the experimental use of gamma globulin, corticosteroids and dehydroepiandrosterone were either ineffective or provided temporary relief of symptoms for one month or less.
Research is underway to determine if a Coxsackie B virus associated with stress and amino acid (tryptophan) deficiencies may be implicated in onset of myalgic encephalomyelitis. When the disorder is better understood, scientists may be able to determine a better course of treatment or possibly some method of prevention.
Information on current clinical trials is posted on the Internet at www.clinicaltrials.gov. All studies receiving U.S. Government funding, and some supported by private industry, are posted on this government web site.
For information about clinical trials being conducted at the NIH Clinical Center in Bethesda, MD, contact the NIH Patient Recruitment Office:
Tollfree: (800) 411-1222
Email: email@example.com
For information about clinical trials sponsored by private sources, contact:
Larson DE, ed. Mayo Clinic Family Health Book. New York, NY: William Morrow and Company, Inc; 1996:1065.
Fauci AS, Braunwald E, Isselbacher KJ, et al., eds. Harrison's Principles of Internal Medicine. 14th ed.McGraw-Hill Companies. New York, NY; 1998:2483.
Natelson BH, Lange G. A status report on chronic fatigue syndrome. Environ Health Perspect. 2002;110 Suppl 4:673-77.
Pall MI, Satterle JD. Elevated nitric oxide/peroxynitrite mechanism for the common etiology of multiple chemical sensitivity, chronic fatigue syndrome, and posttraumatic stress disorder. Ann N Y Acad Sci. 2001;933:323-29.
Patarca I. Cytokines and chronic fatigue syndrome. Ann N Y Acad Sci. 2001;933:185-200.
Craig T, Kakumanu S. Chronic fatigue syndrome: evaluation and treatment. Am Fam Physician. 2002;65:1083-90.
Buskila D, Press J. Neuroendocrine mechanisms in fibromyalgia-chronic fatigue. Best Pract Res Clin Rheumatol. 2001;15:747-58.
Whiting P, Bagnall AM, Sowden AJ, et al. Interventions for the treatment and management of chronic fatigue syndrome: a systematic review. JAMA. 2001;286:1360-68.
Mayo Clinic. Chronic fatigue syndrome. 2001:9pp.
NIAID (National Institute of Allergy and Infectious Diseases) Fact Sheet. Chronic Fatigue Syndrome. 2002:5pp.
Myalgic Encephalomyelitis. 1999:8pp.
Basic Introduction to CFS(ME) - (layman's version). 1999:8pp.
Myalgic Encephalomyelitis. BBC News. 1998:3pp.
Hyde B. Nightingale Research Foundation. The clinical and scientific basis of myalgic encephalomyelitis/chronic fatigue syndrome. nd. 2pp.
Contact a Family. Myalgic Encephalomyelitis. 2001:5pp.
The Myalgic Encephalomyelitis Association of Ontario. About M.E./C.F.S. nd. 2pp.
National Chronic Fatigue Syndrome & Fibromyalgia Association
P.O. Box 18426
Kansas City, MO 64133
Tel: (816)737-1343
Fax: (816)524-6782
Email: email@example.com
Internet: http://www.ncfsfa.org
ME Association
7 Apollo Office Court
Radclive Road
Bucks, MK18 4DF
United Kingdom
Tel: 01280818964
Email: email@example.com
Internet: http://www.meassociation.org.uk
Centers for Disease Control and Prevention
1600 Clifton Road NE
Atlanta, GA 30333
Tel: (404)639-3534
Tel: (800)232-4636
Email: firstname.lastname@example.com
Internet: http://www.cdc.gov/
NIH/National Institute of Allergy and Infectious Diseases
Office of Communications and Government Relations
6610 Rockledge Drive, MSC 6612
Bethesda, MD 20892-6612
Tel: (301)496-5717
Fax: (301)402-3573
Tel: (866)284-4107
Email: firstname.lastname@example.com
Internet: http://www.niaid.nih.gov/
CFIDS Association of America
PO Box 220398
Charlotte, NC 28222-0398
Tel: (704)365-2343
Fax: (704)365-9755
Tel: (800)442-3437
Email: firstname.lastname@example.com
Internet: http://www.cfids.org
MAME, Inc. (Mothers Against Myalgic Encephalomyelitis)
1 Orne Square
Salem, MA 01970
Tel: (978)744-8293
Fax: (978)744-2027
Email: firstname.lastname@example.com
Internet: http://www.mame-net.org
National CFIDS Foundation, Inc.
103 Aletha Road
Needham, MA 02492-3931
Tel: (781)449-3535
Fax: (781)449-8606
Email: firstname.lastname@example.com
Internet: http://www.ncf-net.org
P.O. Box 9204
Bardonia, NY 10954
Tel: (914)648-9197
Fax: (845)215-0041
Email: firstname.lastname@example.com
Internet: http://www.cfalliance.org/
Genetic and Rare Diseases (GARD) Information Center
PO Box 8126
Gaithersburg, MD 20898-8126
Tel: (301)251-4925
Fax: (301)251-4911
Tel: (888)205-2311
Internet: http://rarediseases.info.nih.gov/GARD/
ME Research UK
The Gateway
North Methven Street
Perth, PH1 5PP
United Kingdom
Tel: 01738451234
Email: firstname.lastname@example.com
Internet: http://www.meresearch.org.uk
For a Complete Report
This is an abstract of a report from the National Organization for Rare Disorders, Inc.® (NORD). Cigna members can access the complete report by logging into myCigna.com. For non-Cigna members, a copy of the complete report can be obtained for a small fee by visiting the NORD website. The complete report contains additional information including symptoms, causes, affected population, related disorders, standard and investigational treatments (if available), and references from medical literature. For a full-text version of this topic, see http://www.rarediseases.org/search/rdblist.html.
The information provided in this report is not intended for diagnostic purposes. It is provided for informational purposes only. NORD recommends that affected individuals seek the advice or counsel of their own personal physicians.
It is possible that the title of this topic is not the name you selected. Please check the Synonyms listing to find the alternate name(s) and Disorder Subdivision(s) covered by this report
This disease entry is based upon medical information available through the date at the end of the topic. Since NORD's resources are limited, it is not possible to keep every entry in the Rare Disease Database completely current and accurate. Please check with the agencies listed in the Resources section for the most current information about this disorder.
For additional information and assistance about rare disorders, please contact the National Organization for Rare Disorders at P.O. Box 1968, Danbury, CT 06813-1968; phone (203) 744-0100; web site www.rarediseases.org or email email@example.com
Last Updated: 4/8/2009
Copyright 1987, 1988, 1989, 2004, 2009 National Organization for Rare Disorders, Inc.
This information does not replace the advice of a doctor. Healthwise, Incorporated disclaims any warranty or liability for your use of this information. Your use of this information means that you agree to the Terms of Use . How this information was developed to help you make better health decisions.
Healthwise, Healthwise for every health decision, and the Healthwise logo are trademarks of Healthwise, Incorporated.


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Almost over
Issue 638. The next to last issue of the Cap and series, so how does it fair? Well, I will give it that the story is good. It's a nice yarn set in another world but I must admit that though I've been following the series since Hawkeye I'm sort of lost on a few things. The story jumps to and fro sometimes and it left me a bit confused, a more intelligent man could probably comprehend it better than me. Cullen is a fantastic writer, let me say that first and foremost, but it seems he faltered a tad with this latest yarn but maybe I'm missing something so it may be better than what I see. The art on the issue is just bad. It reminds me of Archie or something. It doesn't really fit the feel the book is going for. At least that's my opinion. Despite it`s short comings I still think the issue is worth 3 bucks. Hopefully the end will be good, let's cross our fingers.


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Games Similar To Rail Rush 3 Action Game
Previous available version(s) of Rail Rush 3:
Rail Rush
Dare to enter the dark and dangerous mine for the sake of bringing home a bunch of golden nuggets. Just keep in mind that you will encounter a series of broken railways.
Available soon:
Other games in the same genre as Rail Rush 3:
Amateur Surgeon
200,123 plays
Burrito Bison Revenge
114,557 plays
Kamikaze Pigs
36,730 plays
Bloons Super Monkey
407,452 plays
Pixel Purge
44,268 plays


text: Business Square launches IFTTT channel, lets your transactions trigger almost anything July 24, 2014 8:10 AM Simon Cohen 0 Here's a conditional statement for you: IF you haven't tried out IFTTT (If This Then That), THEN you are missing out on one of the most incredibly useful tools ever invented. Especially if you're a Square mobile payments user. No idea what I'm babbling about? Here's the IFTTT 101: If This Then That lets you create so-called "recipes." These are essentially instructions for the web-based IFTTT to automate certain actions between the services IFTTT supports. It can be as simple as "Whenever I get a new email in Gmail, send me a text." The beauty of IFTTT is that because it supports over 119 different services (known on IFTTT as channels), you can create an almost unlimited combination of recipes that can automate everything from your home lightbulbs to your Instagram account. Now, thanks to the addition of the Square channel, you can add mobile payments to the list. A perfect example for the busy entrepreneur is the "Settlements made via Square add a row to a spreadsheet" recipe which connects Square transactions with Google Drive. So now, not only would you get the automatic transaction confirmations from Square itself, you'd also get a constantly up-to-date spreadsheet that you could use with your existing formulas to track your business. How useful any IFTTT channel is depends entirely on the number of triggers it supports, and each channel is different. The Square channel offers: Any new payment This Trigger fires every time a new payment posts to your Square Merchant account. New payment over a specific amount This Trigger fires every time a new payment over an amount you specify posts to your Square Merchant account. Any new refund This Trigger fires every time a new refund posts to your Square Merchant account. New refund over a specific amount This Trigger fires every time a new refund over an amount you specify posts to your Square Merchant account. Any new settlement This Trigger fires every time a new settlement is posted to your Square Merchant account. Don't forget, even though IFTTT recipes are limited to automation between two channels, you can create and "stack" as many recipes as you want, which could result in some fairly sophisticated workflows. IFTTT is rapidly becoming the favorite glue in the Internet of Things universe, at least from a consumer perspective. It may not possess the kind of extensibility that enterprise solutions have, but that's why it's a perfect fit for Square, which is itself a response to the difficulties created by typical enterprise payment systems. More information: Square Square is a revolutionizing millions of everyday transactions between buyers and sellers with its free credit card reader for iPhone, iPad and Android devices. Square for iPad services as a full point of sale system for business to acc... read more » Powered by VBProfiles


text:
Teak Dining Table and Dining Chairs
Outdoor Teak Dining Tables
Availability: In stock
Item #: MK-FO DNTB
Why Green
- Reclaimed, sustainable plantation grown teak
- Manufacturing process produces minimal impact to eco system
- Flat packed for condensed transport requirements
Expert Rating:
Our dining tables and chairs are made with the finest reclaimed, sustainable plantation grown teak (Tectona grandis) available in the world and we have gone to great lengths in establishing strategic partnerships that allow ample wood availability with minimal impact to the fragile Indonesian eco system. The quality of our wood is second to none and each plank is painstakingly examined for irregularities and flaws prior to manufacturing resulting in a consistent warm golden honey aesthetic throughout each piece. To further our quest to create the finest furniture on the market today all of these furnishings are kiln dried to minimum of 10% moisture content under very strict manufacturing guidelines, feature world class Hafele hardware combined with dovetail joinery and are expertly finished to create a masterpiece for your living space.
Model Choices
Outdoor Teak Dining Tables
Outdoor Teak Dining Chairs
Sustainable furnishings for a modern world; Offering authentic and unique products that can proudly be displayed within the confines of ones home by expanding the organic indoor and outdoor 'living space' into a sanctuary of relaxation and comfort intertwined with the lifestyle we live.
These products are experiential, organic, and relevant to passionate lifestyle participants and design enthusiasts. We work to live and enjoy the fruits of our labor. Whether that is with our families and friends in the confines of our homes or throughout our global travels experiencing the many cultures of the world.


text:
ONR TechSolutions Program Lightens Burden for Navy's EOD Teams
Designed to cut the 50 pounds of battery devices hauled by the Navy's explosive ordnance disposal (EOD) teams, the Office of Naval Research's (ONR) TechSolutions Program has developed a lightweight power system, which was delivered July 22.
Responding to a request from the Explosive Ordnance Disposal Training and Evaluation Unit (EODTEU) 2 to create a lightweight power device to charge their specialized equipment, TechSolutions partnered with Naval Surface Warfare Center Crane, Ind., and Protonex Technology Corp. to develop the Power Management Kit (PMK) and shipped five units to the team for a trial.
"The PMK gives the warfighter a very significant weight reduction in batteries, chargers and adapters, while also increasing real-time awareness of power usage and availability," said Phil Robinson, Protonex's vice president and ONR's principal investigator for the PMK project.
The kit is a lightweight, portable system containing common military rechargeable batteries, a solar-powered blanket, a 1-pound Soldier Power Manager (SPM) unit and "smart" cables to link the SPM with EOD equipment. The PMK is centered around the SPM, which can harness energy from a variety of sources to charge batteries and provide power to attached gear. Any new equipment added to the EOD team's arsenal can be supported by merely providing a new cable. Therefore, the SPM itself never requires an upgrade.
By enabling teams to use alternative energy sources, such as a solar cell-covered blankets and fuel cells, the PMK reduces the team's logistics footprint. Few of the Navy's EOD teams' primary tools and equipment use the same power sources, so Sailors and Marines must carry multiple single-purpose batteries to power their gear.
"Currently, if one were to collect all the battery chargers allocated to an EOD platoon, they would fill a 4-foot by 4-foot table," according to EODTEU 2 Combat Development staff. "The PMK, with all of its cables, and the SPM in a soft roll case weigh only 9 pounds, replacing up to 50 pounds of specialized chargers and related equipment."
A graphical interface displays information about batteries and sources, power usage, state of charge and operational details. This data is stored and analyzed, providing EOD teams with unprecedented visibility, safety, situational awareness and readiness when planning future missions.
TechSolutions accepts recommendations and suggestions from Navy and Marine Corps personnel on ways to improve mission effectiveness through the application of new technology. The TechSolutions team provides Sailors and Marines with prototype technologies to rapidly address immediate needs. TechSolutions works closely with the fleet and force to meet specific requirements that cannot be readily satisfied with commercial off-the-shelf technologies. Typical turn-around time for a working prototype is 12-18 months.
On the Net:


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Can an employer require drug testing in the workplace?
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Cullen & Dykman Sees Colleges Calling for Title IX Help v
Fighting for Education Rights: Equal Justice for Pregnant and Parenting Students
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Student and Alumni Litigation
Winston & Strawn's Kessler Sees Change and Opportunity in College Athletics
Fixing Law Schools: Are More Types of Degrees the Answer?
ATL Law School Rankings: All About The Jobs
The Integrated and Coordinated Approach to Title IX Compliance
Why Milbank Sends 4th-Years Back To School
Next Accreditation System – Interview with Andy Roth, Member, Mintz Levin
Dean: Law Schools Use Merit Scholarships To Boost Rankings
How Bryan Cave Grooms Rainmakers
Consultant: Legal Ethics Rulemaking Outpaced By Technology
Dean: Law Firms 'Support' NYLS's 2 Year Degree Program
Law Prof: Law Schools Still 'Inaccurate' On Employment Numbers
What is an Intellectual Property Attorney?
Protecting Separate Property in Arizona: Basic Principles
Happy Halloween! The Virginia Supreme Court issued opinions on Halloween this year. A complete coincidence, but I do hope that nothing in this term's opinions has scares you! This term resulted in two cases related to...more
The 2014 legislative short session adjourned on August 20, 2014. The General Assembly passed several bills affecting alcoholic beverages in North Carolina. Significant provisions of those bills are summarized below....more
Penn State University recently decided to waive attorney-client privilege and cooperate in the criminal prosecutions of certain former employees. Obviously, the former employees have attempted to assert privilege to exclude...more
In Syracuse University v. National Union Fire Insurance of Pittsburgh, PA, No. 2012EF 63 (Sup. Ct., Onondaga County, January 29, 2013), the New York Supreme Court, County of Onondaga, held that an insured's costs incurred in...more
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BOGALUSA, La. Deputies made a meth lab bust Thursday night in Bogalusa, according to the Washington Parish Sheriff's Office.
At least two people were arrested in the home.
A 10-year-old child was found inside at the time of the arrest.
Washington Parish Sheriff Randy Seal said the sheriff's office will be releasing the identity of those arrested and what charges they'll be facing Friday morning.


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Northeastern University network scientists have found a way to connect diseases based on their shared molecular interactions, a remarkable step in understanding human diseases.
New algorithm gives credit where credit is due
Assigning credit for science papers with multiple authors can sometimes be a challenge. But a paper from Northeastern's Center for Complex Network Research offers a new way to allocate this credit.
Groundbreaking research maps cultural history
New research from Northeastern's Center for Complex Network Research presents a pioneering approach to understanding European and North American cultural history by mapping out the mobility patterns of notable intellectuals over a 2,000-year span.
A kid in a network shop
Baruch Barzel, a post-doctoral research associate in the Center for Complex Network Science, answers some of the most fundamental questions about complex networks. The answers surprised even him.
You scratch my back and I'll scratch yours
Communities with strong mutualistic interactions tend to be more resilient, according to a new study by Filippo Simini, a postdoctoral research associate in Northeastern's Center for Complex Network Research.
Complex systems made simple
Network scientists at Northeastern have designed an algorithm capable of identifying the subset of components that reveal a complex system's overall nature.
Nurturing a seed of discovery
Network scientists at Northeastern collaborate on first large-scale map of a plant's protein network, which could one day help treat human disease.
Network scientist awarded international prize for research
Director of Northeastern's Center for Complex Network Research wins recognition from science foundation based in Italy


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Sto. Niño festivities off to resounding start
More News from Doris Bongcac, Jason Baguia
CEBU CITY—More than 100 boats joined the Sto. Niño fluvial procession that started after 6 a.m. on Saturday as hundreds of devotees lined the port area from Ouano Wharf in Mandaue City to the Cebu City port.
At Ouano Wharf, devotees released multicolored balloons to greet the Galleon Trinidad, which carried the images of the Sto. Niño and Our Lady of Guadalupe, led by Cebu Archbishop Jose Palma.
About 100 devotees, many of them carrying their own Sto. Niño images, were on board the Philippine Navy ship BRP Emilio Aguinaldo.
The procession boats were festooned with colorful banners and other decorations. There were men dressed in Spanish armada costumes.
The devotees on the ground waved red and yellow banners, raised images of the child Jesus or Sto Niño, and shouted "Viva! Pit Senyor!" as the galleon passed by.
The drum and bugle corps on the boat resounded with the Sinulog beat as passengers danced holding their Sto. Niño images high. Songs about the Sto. Nino were also played.
Fluvial parade
In Lapu-Lapu City, crowds gathered on Muelle Osmeña, Mactan Island, and crowded the Mandaue-Mactan bridge to watch the fluvial parade.
Lapu-Lapu devotees set off firecrackers, waved their hands in unison and sang, while the big boats sounded their horns in salute.
Some devotees on jet skis followed the main galleon. A small plane dropped yellow rose petals on the procession.
The procession arrived at Cebu port's Pier One at 7:25 a.m., earlier than usual. The Church officials had decided to cut the route by 0.5 nautical miles, bypassing the Pasil fish port in Cebu City.
A 9 a.m. Mass at the Basilica del Sto. Niño reenacted the first baptism of the rulers and residents of Cebu with the coming of the Spanish explorers.
There were no untoward incidents reported. But the Coast Guard commander in Cebu, Rolando Punzalan, said they would issue violation citations to vehicles that participated in the procession but did not register with them.
Many devotees attribute miraculous powers to the image of the Sto. Nino.
Heart attack survivor
Ramona Fernandez, 57, of Barangay Tingub in Mandaue City, said she endured the 40-minute foot procession from the National Shrine of St. Joseph to the Ouano Wharf in Mandaue City as a way of thanking the Sto. Niño for helping her survive a heart attack in 2012.
Holding a one-foot image of the miraculous child, Fernandez said that since recovering from her attack, she had pledged (panata) to always attend the sendoff of the Sto. Niño and Our Lady of Guadalupe.
"This is my thanksgiving for the additional years given to me," said Fernandez, who was up at 4 a.m. to attend the sendoff Mass at the National Shrine of St. Joseph together with her 12-year-old grandson.
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Weekend: Old Wethersfield, CT
Just seconds from the roar of I-91 lies the tranquil center of Old Wethersfield, Connecticut's first permanent settlement... Read More »
Weekend: Providence, RI
After your outstanding dinner, spend those calories on great Providence walks and places to visit along the way.... Read More »
Weekend: Quebec City
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I'm not a good one to tell you what to do in Sandwich, Massachusetts, especially if you have... Read More »
Weekend: Stowe Spas
Stowe, Vermont, is known for action: skiing in winter and biking, hiking, fishing, and horseback riding in summer... Read More »
Weekend: Woodstock, Vermont
Among the villages in New England that beg you to park your car once and return to it... Read More »
West Hartford, CT: Ice Climbing
Crampons. Check. Helmet. Ice picks. Backpack. Climbing harness. Check. All geared up, Matt Shove–my ice-climbing guide from Eastern... Read More »
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This Western Massachusetts foliage drive follows the Connecticut River through the countryside drawing you through multiple layers of... Read More »
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From Vermont's Green Mountains to Rhode Island's vast coast line, there's a reason to visit every New England... Read More »
What the Yankee Locals Know
Most of these travel tips for the Monadnock region have been written by Yankee Publishing employees, who live... Read More »
What the Locals Know
Bob Harkins, a partner with Maine Distilleries, maker of Cold River Vodka, loves to send friends to Buck's... Read More »
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For spectacular 360-degree views of the Connecticut River Valley and beyond, head a half mile north of the... Read More »
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Bookseller Mary Hill likes to scout out the town's quirky markers and gravestones. "Up on Newfane Hill, west... Read More »
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Jamestown residents, from the town doctor and the judge to fishermen and society folk, head to "the Ganny"... Read More »
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According to Vermont photographer Skye Chalmers, windsurfers and kitesurfers flock to Sandbar State Park, Milton, exit 17 off... Read More »
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Come Back Next Spring Somehow Pittsfield State Forest on the west side of town has never made a... Read More »
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What to Do
League of NH Craftsmen 32 Main St., Center Sandwich 603-284-6831; nhcrafts.org Flagship location of this Granite State organization;... Read More »
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Mon-Fri: 7am-1am EST / Sat-Sun: 7am-11pm EST
ApplianceGeneral Electric Oven
Level of DifficultyDifficult
Time to do repairMore than 2 hours
Age of ApplianceMore than 10 years
NutdriverPliersScrew driversWrench setWrench(Adjustable)
1) Took photo of original wiring behind original clock. 2) Marked up wiring instructions for new clock with wire colors. 3) Marked wire colors next to posts on new clock. 4) Removed old clock and its metal mounting bracket. 5) Installed new clock onto old mounting bracket.PROBLEM: The holes in the glass facade of oven are shifted about 1/4" off from the pushbuttons on the new clock. 6) Remove bracket and enlarged holes by 1/4" sideways. This includes shifting the holes for the oven light pushbutton switches, and the four "racetrack" holes where the bracket attaches to the oven. Plug wires into new clock, using extender wires provided as needed. Labelled extender wires with their "colors". POWER UP. The clock works, and the "Timed Bake" works. However, the Self-Cleaning of the oven cannot be started, because the latch level cannot be moved to the right (locked ) position. This leaves us unsatisfied, as restoration of Self-Cleaning was the reason we decided to replace the oven clock.
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Part Number: PS233996
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2011 Who's Hot & Not
Week 7
Cirminiello -
Who's Hot ... Week 7
Who's Not ...
10. The Air Force Defense The Academy does a heroic job of defending what matters most; opposing offenses, though, would not be included on that list this year. The Falcons D, believed to be a potential strength before the season started, has become unraveled in recent weeks. They've been tagged for at least 34 points in all four games against FBS opponents, including 59 to Notre Dame two weeks ago and 41 in Thursday night's loss to visiting San Diego State.
9. Troy What has happened to the perennial Sun Belt Conference heavyweight? The Trojans, who began the year as the heavy favorite to win at least a share of a sixth straight title, has dropped two straight to the league's Louisiana twins from Monroe and Lafayette. An even bigger head-scratcher has been the play of a sputtering offense, which has produced only 27 points in the two losses, and has been ineffective at establishing the ground game.
8. The Pittsburgh Offense Well, apparently the Panthers' 44-17 steamroll of South Florida a little over two weeks ago was just a fluke. Since that Thursday night game, Pitt has reverted back to its early season form, producing less than 300 yards in consecutive losses to Rutgers and Utah. Saturday's home loss to the Utes was rock bottom … at least that's the hope in Western Pennsylvania; the Panthers generated just 120 total yards, including 50 through the air, and watched their overwhelmed quarterbacks get sacked seven times.
7. Big East Offenses Pittsburgh wasn't alone in its futility in Week 7. Connecticut and South Florida participated in a 16-10 game that featured just one touchdown and six turnovers. Louisville failed to reach the end zone in its 25-16 loss to Cincinnati. And Rutgers was the first team in a month to be held in check by Navy. If you pieced together a Big East all-star team, it still would have a hard time outscoring some of the better programs from the Big 12 or the Pac-12.
6. Ole Miss Head Coach Houston Nutt The nuggets of negativity are beginning to pile up around the feet of Nutt, whose fourth season in Oxford has gone from bad to worse. This past weekend's 52-7 loss to Alabama, the eighth straight in the series, was Mississippi's worst since 1981. It also marked the most points scored by the Tide in an SEC game in 21 years. Arkansas, Auburn and LSU remain on the schedule for the 2-4 Rebels, begging the question of whether or not Nutt can survive a second straight losing season at this University.
5. Cal The Bears are getting a reality check after starting quickly against lesser competition. What else is new? Losers of three straight Pac-12 games, Cal is in the midst of its annual free-fall under embattled head coach Jeff Tedford. The school was throttled at home by USC on Thursday night, 30-9, its eighth consecutive defeat at the hands of the Trojans.
4. The Florida Offense You know the situation is bad when folks start to miss John Brantley. Yes, injuries have forced the Gators to remove the training wheels on Jeff Driskel and Jacoby Brissett, but 27 points over the last three games is still a bitter pill to swallow in Gainesville. Florida was kept out of the end zone against a subpar Auburn defense this past weekend, while generating just 194 total yards of offense. The coaches hope to have Brantley back from his ankle injury in time for the Georgia game two weeks from now.
3. The Georgia Tech Offense The Yellow Jackets are unstoppable no longer. Since peaking with a 66-point explosion in Week 3, Tech has steadily declined. The program has produced just 21 points in each of the last two games; the modest output nearly cost it a game versus Maryland, and did on Saturday versus Virginia. The Jackets were held below their season average on the ground, and have lost their element of surprise from QB Tevin Washington and the passing game.
2. Arizona State (versus top 10 teams)
The Sun Devils had Oregon backed into a corner late Saturday night. Not only did they grab a third quarter lead, but Ducks QB Darron Thomas had to leave the game with a left leg injury. The party was over at Autzen, right? Nope. Oregon scored 20 of the game's final 23 points, all with backup QB Bryan Bennett behind center, to capture the victory. For Arizona State, it was a colossal lost opportunity, and its 16th consecutive loss to a team ranked in the top 10.
1. The SEC East Someone is going to be crowned SEC East champ, or sacrificial lamb, as it were. The gap between the East and the West has never been wider, with the latter boasting three top 10 members, and the former having none. Just this past weekend alone, Tennessee was crushed by LSU, 38-7, Florida fell meekly to Auburn, 17-6, and South Carolina barely escaped Mississippi State, which calls the West cellar home. Georgia and South Carolina are the only two East squads with no more than two losses, but the Dawgs are living off the weak portion of the schedule, and the Gamecocks are running on fumes. If the West winner doesn't wind up as the SEC champ, it'll go down as the biggest upset of 2011.
Who's Hot ... Week 7


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The selection this month is The Lost Wife by Alyson Richman.
Please join us to hear about the true story of a family's successful fight to survive and stay together during one of the most horrific periods of modern history. Told by the youngest child, Jeannie Parnes Wechsler.
Sheryl the Shrink, says is a compilation of insights, life lessons, observations and strategies by psychotherapist Sheryl Schembari, LCSW. Join us as Sheryl provides practical solutions to common issues that often create barriers in people's lives.
The selection this month is Everything I Never Told You by Celeste Ng.


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Staff and Faculty
Ann Saltzman, Director
Ann Saltzman, Professor Emerita of Psychology and Director of Drew's Center for Holocaust/Genocide Study, has dedicated her career to exploring the interface between psychology and Holocaust Studies. Author of numerous presentations made at both Psychology and Holocaust Studies conferences and in community forums, her Holocaust Studies publications include: a co-authored chapter in New Perspectives on the Holocaust: A Guide for Teachers and Scholars; an invited chapter in Obedience to Authority: Current Perspectives on the Milgram Paradigm; "'Obedience to Authority' in Understanding Genocide (in Clio's Psyche) and a review of Approaching an Auschwitz Survivor (in the journal Biography). She has been teaching Holocaust courses since 1990 and serves as the faculty coordinator for the Minor in Holocaust Studies. Her other research and teaching interests include History of Psychology, Psychology of Women, and social issues psychology.
Joshua Kavaloski, Assistant Director
Joshua Kavaloski is Associate Professor of German and Director of German Studies at Drew University. His scholarship and teaching encompasses narrative prose and film of the twentieth century, and he has published essays on Franz Kafka, Thomas Mann, Jurek Becker, and Daniel Kehlmann. He is author of the book, High Modernism: Aestheticism and Performativity in Literature of the 1920s.
Yasmin Acosta, Coordinator
Yasmin Acosta is a graduate of Rutgers University with a Bachelor's degree in English and a minor in Psychology. She has had a lifelong interest in Judaica and Holocaust studies. She wholeheartedly supports the Center's Mission to commemorate those who perished in the Holocaust and other genocides, celebrate those who survived and educate upcoming generations to "remember for the future". In her spare time, she writes poetry, enjoys reading, art, theater, music, film, photography and travel and is currently pursuing her Master's degree at Drew University.
Jacqueline Berke, Director Emerita
Jacqueline Berke, Professor of English Emerita and Co-Director of the Center for Holocaust Study, has taught literature and writing in both the College of Liberal Arts and the Graduate School at Drew and served as Director of the Writing Program from 1965 to 1985. She is the author of a rhetoric text Berke's Twenty Questions for the Writer (Harcourt Brace, 6th edition, 1996), widely used in freshman composition classes throughout the country. She has also served as research director, consultant, and coordinator of a series of writing-related research projects such as the federally funded "Project English" (1965) and a computer centered composition "experiment" sponsored by the N.J. Department of Higher Education (1985).


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Ayala toll road project hits a snag
SMC-Citra opposition may delay PPP venture
The Ayala and San Miguel-Citra groups are at odds over the proposed road linkage between the South Luzon Expressway (SLEx) and the Daang Hari toll road, further delaying the first infrastructure project under the Aquino administration's public-private partnership (PPP) program.
The Ayala group needs to seal a tripartite agreement with the Department of Public Works and Highways (DPWH) and SLEx concessionaire South Luzon Tollroad Corp. (SLTC) to establish the road linkage with SLEx. The Citra/San Miguel consortium had taken over SLTC since early 2012.
Inquirer sources said SLTC was critical of the new design proposed by Ayala for the linkage, fearing this would worsen traffic conditions in its jurisdiction. Separately, the sources said SLTC was concerned over plans to cut or ball 283 trees in its concession area along Susana Heights as this might draw flak from environmentalist groups.
Daang Hari is a four-kilometer major arterial road that will connect Cavite's rapidly growing towns to Metro Manila via SLEx. Ayala and the San Miguel/Citra groups likewise battled for the right to undertake this project under the PPP program in end-2011. About 30 percent of the arterial road is complete, bulk of which had been undertaken by the government prior to the entry of Ayala as concessionaire.
PPP Center executive director Cosette Canilao said a memorandum of agreement had been drafted and already approved by the DPWH and Ayala. "But there are questions from the SLTC board so that's the cause of delay now," she said, adding the traffic management was SLTC's biggest concern.
Other Inquirer sources explained that SLTC was opposed to the plan to create a tunnel or undercrossing connecting the Daang Hari to SLEx on grounds that this would worsen traffic conditions in the area, cause damage to its own toll road and that the revision was not part of the original design/terms approved by SLTC even prior to the entry of the San Miguel/Citra group as controlling shareholder.
Instead, SLTC wanted Ayala to revert to the original design of building a roundabout or "rotunda" at the Daang Hari-Susana Heights interchange, noting that the DPWH itself had previously backed such "rotunda" model for both north- and south-bound traffic "in consideration of traffic safety," the sources explained.
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Tempeh is a traditional Indonesian food made by fermenting soybeans with a starter culture. Traditional tempeh is a soybean cake that has a rich smoky flavor and aroma, and a firm nutty texture. It is a great source of protein and vitamin B-12.
Tempeh is fermented at 88°F (31ºC) which is the normal outdoor temperature in Indonesia. This traditional food often replaces meat in dishes and can be sliced, marinated, and seasoned as desired.
Each box contains 4 individual serving packets; each packet makes one batch of tempeh using the recipe included.


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Kate, mom to 7 year old Djuna and 4 yr old Alden. Missing our good friend Hal the cat who died June 2, 2010
Lisa, lucky mama of Kelly (3/93) , Emma (5/03) , Evan (7/05) , & Jenna (6/09)
Loving my amazing dh, James & forever missing Aaron Ambrose (11/07)
Well, I've been absent for 8 months, and during that time, it turns out that I have completely transformed. You are all precious. Thank you for being here and sharing your lives. You are truly a gift. Jan. 23, 2012
Ak Hippie mama Yamia DSD '03 DS '07 DS2 '09 & DS3 '12
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