text:
Vertically oriented semiconductor devices may be added to a separately fabricated substrate that includes electrical devices and/or interconnect. The plurality of vertically oriented semiconductor devices are physically separated from each other, and are not disposed within the same semiconductor body, or semiconductor substrate. The plurality of vertically oriented semiconductor devices may be added to the separately fabricated substrate as a thin layer including several doped semiconductor regions which, subsequent to attachment, are etched to produce individual doped stack structures. Alternatively, the plurality of vertically oriented semiconductor devices may be fabricated prior to attachment to the separately fabricated substrate. The doped stack structures may form the basis for diodes, capacitors, n-MOSFETs, p-MOSFETs, bipolar transistors, and floating gate transistors. Ferroelectric memory devices, Ferromagnetic memory devices, chalcogenide phase change devices, may be formed in a stackable add-on layer for use in conjunction with a separately fabricated substrate. Stackable add-on layers may include interconnect lines.
1. A method of forming a semiconductor structure, comprising:
providing a substrate having electrical devices formed therein, and further having at least one dielectric layer and at least one interconnect layer disposed above the substrate;
providing a first stackable add-on layer, the first stackable add-on layer including a plurality of vertically oriented semiconductor devices disposed within the first stackable add-on layer, the plurality of vertically oriented semiconductor devices separated from each other by dielectric material; and
attaching the stackable add-on layer to a layer of the substrate that is the greatest distance from the substrate as measured from the bottom surface of the substrate.
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The present invention relates generally to three dimensional integrated circuit (IC) structures and manufacturing methods therefore, and more particularly relates to combining a semiconductor substrate with a thin add-on semiconductor layer in which various active and/or passive devices have been fabricated.
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Conventional implementations require wafer or chip alignment marks to be bonded. The wafer alignment marks are different from the alignment marks used in photo processing. Therefore, the 'hybrid IC technology' used in 3-D IC is considered to be another type of Multi-Chip Package (MCP). The main purpose of the 'hybrid IC technology' is to reduce interconnection lines used in package interconnections to facilitate high speed device operation.
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In another conventional approach, a single crystalline semiconductor layer is formed by melting polycrystalline or amorphous semiconductor layer disposed on a dielectric layer using, for example, a laser. Devices are then formed using the single crystalline semiconductor layer, which was formed from the polycrystalline or amorphous layer. In still another conventional approach, a single crystalline epitaxial layer is grown on a dielectric layer where the dielectric layer has partially exposed holes therethrough to an underlying single crystalline layer.
However, both the laser recrystallization and the epitaxial processes described above are have drawbacks, such as requiring high temperature operations, which are incompatible with the low temperature processing required for many semiconductor devices; and further, single crystalline semiconductor layers formed in this way may have many defects, and therefore these methods are not widely used.
Briefly, a plurality of vertically oriented semiconductor devices may be added to a separately fabricated substrate that includes electrical devices and or interconnect. The plurality of vertically oriented semiconductor devices are physically separated from each other, and therefore are not disposed within the same semiconductor body, or semiconductor substrate.
In one aspect of the present invention, the plurality of vertically oriented semiconductor devices is added to the separately fabricated substrate as a thin layer including several doped semiconductor regions which, subsequent to attachment to the substrate, are etched to produce individual doped stack structures. In other embodiments of the present invention, the plurality of vertically oriented semiconductor devices may be fabricated prior to attachment to the separately fabricated substrate.
In another aspect of the present invention, the doped stack structures may form the basis of a wide variety of semiconductor devices, including, but not limited to, diodes, capacitors, n-type MOSFETs, p-type MOSFETs, bipolar transistors, and floating gate transistors.
In another aspect of the present invention, ferroelectric memory devices, ferromagnetic memory devices, chalcogenide phase change devices, and similar structures may be formed in a stackable add-on layer for use in conjunction with the separately fabricated substrate
In still further aspects of the present invention, the stackable add-on layers include at least one layer of electrical interconnect lines.
A 3-D IC in accordance with the present invention is shown in
Reference herein to "one embodiment", "an embodiment", or similar formulations, means that a particular feature, structure, operation, or characteristic described in connection with the embodiment, is included in at least one embodiment of the present invention. Thus, the appearances of such phrases or formulations herein are not necessarily all referring to the same embodiment. Furthermore, various particular features, structures, operations, or characteristics may be combined in any suitable manner in one or more embodiments.
"ASIC" refers to Application Specific Integrated Circuit. "SoC" refers to a System on a Chip, with "SoCs" being the plural of SoC. A SoC may be an ASIC but is not required to be. An ASIC may be a SoC but is not required to be.
The expression "back bias", as used herein, refers to a voltage applied to the substrate, or body, of a field effect transistor (FET). Back bias is alternatively referred to as substrate bias, or reverse bias.
The expression "conductivity type" is well known in the semiconductor manufacturing field. Conductivity types are generally referred to as n-type and p-type. Semiconductor regions that are doped with donor type impurities form n-type regions. Semiconductor regions that are doped with acceptor type impurities form p-type regions.
The terms chip, semiconductor device, integrated circuit, LSI device, monolithic integrated circuit, ASIC, SoC, microelectronic device, and similar expressions are sometimes used interchangeably in this field. Microelectronic device may be considered to be the broadest term, encompassing the others. With respect to these microelectronic devices, signals are typically coupled between them and other circuit elements via physical, electrically conductive connections. The point of connection is sometimes referred to as an input, output, terminal, line, pin, pad, port, interface, or similar variants and combinations.
The term "device", as used herein, refers to one or more circuit elements that have characteristics that are voltage variant. "Device" includes, but is not limited to, FETs (n-channel and p-channel), diodes, and varactors.
The expression "vertically oriented device" refers to devices having an orientation with respect to a base substrate such that current through those devices is substantially perpendicular to the base substrate.
FET as used herein, refers to metal-oxide-semiconductor field effect transistors (MOSFETs). These transistors are also known as insulated gate field effect transistors (IGFETs). FETs are generally described as three terminal devices having a gate, a source and a drain. Although FETs may be further described as four terminal devices when the body of the FET is considered.
Source and drain terminals refer to the terminals of a FET, between which conduction occurs under the influence of an electric field, subsequent to the inversion of the semiconductor surface under the influence of an electric field resulting from a voltage applied to the gate terminal.
The acronym "SOI" generally refers to Silicon-on-Insulator. As will be appreciated by those skilled in this field, SOI layers can be formed in a variety of ways. Unless otherwise noted, "SOI layer" is used herein to refer to a relatively thin, single crystal portion of a semiconductor wafer that can be cleaved and bonded to another previously fabricated wafer, or similar type of substrate, such that a three dimensional stack is formed from the SOI layer and the previously fabricated wafer or similar type of substrate. In this context, the SOI layer may be thought of as an attachment layer, or stackable add-on structure, that itself contains at least devices and/or interconnections, and which is suitable for bonding to a semiconductor substrate already containing devices and/or interconnections. As a stackable add-on layer, the single-crystal layer may have been doped so as to have one or more doped regions vertically adjacent each other. For purposes of this disclosure, doped regions may include intrinsic regions as well as p-type and n-type regions. Individual semiconductor structures may be formed by etching through portions of the doped stack to electrically isolate those structures. The spaces between such individual structures may be filled dielectric material so as to re-form a layer without gaps or voids therein, and thereby provide for mechanical stability, and support for additional stacked layers.
The expression "3-D IC", as used herein, refers to a three-dimensional integrated circuit that includes a semiconductor substrate having devices and/or interconnect structures fabricated thereon, and least one SOI layer, also having devices and/or interconnect, where the semiconductor substrate and the SOI layer are stacked and bonded to each other.
The disclosures of U.S. Pat. No. 6,600,173, U.S. Pat. No. 5,563,084, and U.S. Pat. No. 6,355,501, show the formation of 3-D ICs as a packing technology that includes stacking individually working ICs. However, embodiments of the present invention do not use individually working ICs, but rather, as shown in
The meaning of thin film including semiconductor layer 104 in
As shown in
Embodiments of the present invention are different from a conventional bonded IC layer that has a shared well 142 or substrate 143, where an electrically common region is located. Additionally, embodiments of the present invention do not have the physically supporting layer which can be found in a conventional SOI IC substrate where all devices in one IC layer are supported by a substrate under a bottom oxide. In an illustrative embodiment of the present invention, a second IC layer that includes FLD 112, 113 is called FLD IC layer 102, and a first IC layer that includes FLD 113 is called FLD IC layer 101. Inter-layer dielectric (ILD) layers disposed above and below FLD IC layer 101 has interconnection lines 132 and vias, or contacts, 131. Interconnection lines 132 and vias 131 connect FLDs directly or indirectly within an FLD IC layer, or connect devices from a FLD IC layer to another FLD IC layer or to a base substrate 103.
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Various embodiments of the present invention do not require a physically supporting substrate for floating devices. Also, without a base substrate, various embodiments could exist along with interconnection lines, vias, and FLDs only.
Various embodiments of the present invention provide floating devices that are separated by dielectric isolation regions. These electrically separated structures do not have the parasitic devices which are typically found in prior art approaches.
Various embodiments of the present invention provide floating devices that may be connected directly or indirectly.
In various embodiments of the present invention, combining the SOI layer with a semiconductor substrate does require the same type of wafer alignment structures as are used in photolithographic processes, rather, the wafer alignment structure may be implemented as a wafer alignment mark, or as a bump-type alignment structure. Alternatively, without a wafer alignment structure, the SOI layer could be transferred along with a simple notch alignment because the transferred SOI layer does not have structures for multiple devices, such as isolation structure or interconnection lines, which are horizontally divided. The transferred SOI layer has only vertically divided several layers.
Various embodiments of the present invention provide for interconnection of floating device both above and below the FLD.
Conventional technology typically uses horizontally oriented MOSFETs. In the case of conventional vertical MOSFETs, implementation of contacts and interconnection is difficult, and processes are incompatible between vertical and horizontal MOSFETs. However, embodiments of the present invention can easily implement vertical devices, including MOSFETs, and compared to conventional approaches, it is easy to implement interconnections and contacts with low contact resistance.
In order to implement logic devices in a conventional manner, individual devices need to be connected. However, in some embodiments of the present invention, FLD logic can be formed using vertically connected individual devices without interconnection lines because embodiments of the present invention include a form of SOI device, and a well is not needed.
In various embodiments of the present invention, a FLD can have directly contacted metal electrodes at top, bottom, and intermediate regions. The area of metal electrodes can be the same as the top and bottom size of single crystalline semiconductor of FLD, which is formed by isolation etching. Therefore, voltage drop of the device could be reduced.
SOI substrate 190 may have a detach layer 191, which may be a porous or strained layer at a certain desired depth using, for example, SmartCut (U.S. Pat. No. 5,882,987), ELTRAN (U.S. Pat. No. 5,371,037), or SiGen technologies. Detach layer 191 is a defective region in the semiconductor lattice and, after bonding with dielectric layer 153, SOI substrate 190 will be removed except for single crystal layer 124 which forms the FLD.
Referring to
Once single crystalline semiconductor layer (i.e., SOI layer) has been transferred, isolation is implemented to make individual floating devices. For isolation formation, trench technology is used. Also at this time, SOI layer on top of scribeline is to be removed because this will facilitate subsequent die saw operations. Bottom electrode 121 of FLD is automatically implemented during the trench isolation process. A method of forming bottom electrode 121 is explained below in conjunction with
Using the method set forth above, multiple FLDs can be stacked and, therefore, IC density can be increased. Various embodiments of the invention, therefore, do not need wafer or chip alignment marks, or micro bumps for wafer alignment when bonding SOI substrate having single crystalline semiconductor layer and dielectric layer having interconnection lines and vias. Various embodiments of the invention can be implemented by mask alignment mark used in conventional photo process. The isolation structure is to be filled by dielectric material and intermediate electrode materials. Formation method of the dielectric and intermediate electrode in the isolation structure is explained in
An FLD IC layer could have one or more SOI layers. The FLD IC layer shown in
FLD could be conventional semiconductor devices. MOSFETs, bipolar transistors, diodes, capacitors, and resistors, images sensors (e.g., Charge-Coupled Devices (CCD) or Active Pixel Sensor (APS)), or MicroElectroMechanical System (MEMS). FLD could be a form of circular pillar (see
FLDs can be divided into High Temperature (HT) and Low Temperature (LT) devices depending on the temperature used in the manufacturing processing. Similarly, depending on the direction of device operation, FLDs can be divided into Vertical (V) and Horizontal (H) devices, where 'V' and 'H' mean the 'Vertical' and 'Horizontal' directions of major device current flow.
FLD process temperature could be divided into high temperature which is above 800� C. and low temperature which is below 650� C. In this disclosure, we call the devices produced with a high temperature process HT-FLD, and call the devices produced with a low temperature process LT-FLD, or simply FLD, because a benefit in accordance with the present invention is the implementation of a 3-D IC at low process temperatures. HT-FLD can be treated at high temperature for thermal activation of implanted ions and could be vertical or horizontal devices. To implement HT-FLD, the interconnection lines 132 and vias 131 in dielectric layer 153 shown in
LT-FLD or FLD do not need ion implantation, heat treatment, and photo process for ion implantation because the impurity layer required for device operation has been formed in SOI substrate before the transfer to dielectric layer. If high temperature is required during the FLD process, characteristics of the devices existing on other layer could be altered. Device process control along early prediction of the alteration is very difficult. Therefore, embodiments of the invention could be implemented on top of base semiconductor substrate having devices without process change. An advantage of the present invention is that a low cost process is obtained because ion implantation and photo process are not required. Also, because various embodiments of the invention do not require a high temperature process, refractory metal, aluminum, and aluminum which has low melting point and is widely used in semiconductor could be used. Also LT-FLD could use metal gate and high-k dielectric materials more easily than conventional manufacturing processes.
A typical form of LT-FLD is VFLD (Vertical FLD) because vertical impurity junctions are formed in SOI substrate already and it is easy to implement a bottom electrode. However, at low temperature, HFLD (Horizontal FLD) can be implemented without ion implantation. HFLD could be a form of MESFET, MOSFET, diode, or horizontal bipolar transistor. As shown in
VFLD (or LT-VFLD) could be a form of MESFET, MOSFET, diode, capacitor, resistor, bipolar, thyristor, or, instead of single device, could be a form of vertical connections of different types of FLD devices to implement circuitry. Combining optimized horizontal devices in the base semiconductor substrate and optimized VFLD, SoC could be optimized in performance and in price.
Unlike vertical device 212 at prior art shown in
The bottom of FLD is connected to metal layer 121 which is also directly connected to vias 131 in the ILD layer 151. Therefore, bottom of FLD already has pre-formed electrode and contact. To connect bottom electrode 121 of FLD 111 and via 131 in the dielectric layer 151, they need to be aligned. The alignment scheme used in this technology is to be done by conventional photo alignment mark (not shown). However, the photo process has misalignment margin and bottom electrode 121 and via 131 should be aligned within the alignment margin. In general, in order to connect interconnection lines at different level of ILD layers through via 131, as shown in
Referring to
Referring to
Second is the method using spacer 123 as shown in
Third method is spacer method using a dummy FLD (i.e., an FLD which does not work as a device). As shown in
The fourth method is, as shown in
Intermediate electrode may surround the entire or part of intermediate region of the VFLD. Also, multiple intermediate electrodes could be formed at one FLD.
After the SOI layer has been transferred from SOI substrate, electrode material 122 has been deposited on the SOI layer and FLD has been patterned, then top electrode could be implemented as shown in
In this disclosure, we annotate VFLD, which is implemented at low temperature and has vertical operation, as follows: MOSFET VMFLD, MESFET VMEFLD, diode VDFLD, resistor VRFLD, capacitor VCFLD, bipolar VBFLD, and Thyristor VTFLD.
VDFLD could be implemented as vertical p-n or p-i-n junction diodes as shown in
There are two types of VCFLDs. One is MOS capacitor type or depletion capacitor, which uses a depletion region formed in the single crystalline semiconductor; and the other one, or dielectric capacitor, stores charge at dielectric interface without a depletion region. If the doping concentration of the semiconductor is low, then, depletion exists in semiconductor region. If doping concentration is high, then, it becomes dielectric capacitor, VCFLD without depletion. VCFLDs are shown in
If the semiconductor has a pillar structure, the capacitance of VCFLD increases due to the increased semiconductor and gate interface area. Also, as shown in
Bipolar type VBFLD is shown in
In accordance with the present invention, to obtain low collector series resistance, the VBFLD does not need a buried layer and heavily doped collector region which connects the collector contact and the buried layer. Various embodiments of the present invention provide lower collector series resistance compared to conventional approaches. Also, base series resistance can be low without a heavily doped extrinsic base region because the surrounding base electrode 123 formed in the middle of VBFLD has a wide contact surface at the base region. Further, the VBFLD does not have parasitic capacitors which prevent high speed operation. In addition, because the VBFLD does not have a substrate, base-collector-substrate parasitic bipolar transistor does not exist in embodiments of the present invention. Whereas conventional implementations need deep and shallow trench isolations, VBFLD only needs one isolation structure 135. In
MOSFET-type VMFLD are shown in
However, vertical MOSFETs of the prior art are not used often because of many disadvantages. Vertical transistors shown in U.S. Pat. No. 5,414,288 and U.S. Pat. No. 6,027,975 are formed by epitaxial growth at exposed single crystalline region. Because this technology requires difficult manufacturing technologies and high temperature operation for epitaxial growth, it is not good for low temperature semiconductor processing.
Pillar type Surrounding Gate Transistor (SGT), shown in U.S. Pat. No. 6,337,247 and U.S. Pat. No. 6,449,186, is difficult to co-exist with optimized horizontal devices and may cause a shadow effect during ion implantation due to pillar type transistor. Also, SGT does not have high integration density because it has problems with forming electrodes at source/drain and gate regions. Therefore, these approaches are not suitable for SoC formation.
The VMFLD has a directly connected bottom electrode which decreases voltage drop, and current reduction by parasitic resistance. Also VMFLD could be easily full or partial depletion mode with control of FLD width, where the depletion mode could be also controlled by operation voltage and gate dielectric constant. Because the detached surface from the SOI substrate becomes heavily doped source/drain region, even though there are small surface defects, unlike prior arts of horizontal device, there is little effect to gate oxide quality, device operation, and yield.
The VMFLD may have gradient impurity distribution in the channel region and electric field could be formed in the channel region due to the graded impurity, where the induced electric field accelerates current flow and graded impurity may reduce Short Channel Effect (SEC). The graded impurity can be formed easily by ion implantation or epitaxial process. Increased impurity concentration in the channel region from source to drain side makes asymmetric operation. In addition, LDD (Lightly Doped Drain) could be selectively formed at drain side only. It is difficult to implement the graded channel in horizontal MOSFET in the prior arts, because of difficulties in high tilt ion implantation and device layout.
MOSFET-type VFLD, or VMFLD, has a gate dielectric layer which is implemented at below 650� C. as shown in U.S. Pat. No. 5,330,935 and U.S. Pat. No. 5,443,863. The dielectric layer could be thermal oxide, deposited oxide, oxynitride, or combination of oxide and nitride, such as ONO and NO (Nitride Oxide). Any suitable dielectric material could be used except high temperature processing films requiring more than 650� C. Another advantage of embodiments of the present invention is that it is easy to use high dielectric constant (high-k) materials in the gate dielectric layer, such as, but not limited to, Al2O3, ZrO2, HfO2, Y2O3, La2O3, Ta2O5, TiO2, and BST. In conventional manufacturing of MOSFETs, a high temperature heat activation operation is required after the source/drain ion implantation. At this time, the properties of high-k materials can be altered. However, the VMFLD process does not need a high temperature process, and so high-k materials could be used at stable condition. Also, if ALD (Atomic Layer Deposition) is used to provide the gate dielectric layer, then a substantially uniform layer can be obtained.
In accordance with the present invention, threshold voltage could be controlled by changing gate dielectric thickness and/or width of FLD. If different gate dielectric thickness is used or different dielectric constant materials are used at VMFLD, then multiple operational voltage and threshold voltage could be implemented at the same SOI layer and it is useful for SoC. Also, because the VMFLD is produced at low temperature, and a surrounding gate is used, it is easy to use a metal gate compared to prior art manufacturing approaches.
In the prior art, for digital application, a MOSFET is in either an "Off" or an "On" state depending on voltage or current status. VMFLD shown in
A 3-D IC including FLDs may have not only single device form, such as MOSFET or bipolar transistor, but also multiple devices formed in a single FLD layer.
In addition to the FLD inverter shown in
In accordance with the present invention, memory devices could be implemented using multiple FLDs.
Using two inverters and two pass transistors on base semiconductor substrate, a six-transistor SRAM cell can be implemented as shown in
There are many ways to implement SRAM cells in accordance with the present invention. A first way is by using four n-MOSFETs on a base semiconductor substrate and two p-MOSFET type FLDs. A second way is by disposing two p-MOSFETs on the base semiconductor substrate and four n-MOSFET type FLDs. A third way is by disposing two p-MOSFET type FLDs on a SOI layer and four n-MOSFET type FLDs on another SOI layer. A fourth way is by using a four-transistor SRAM cell that has either four n-MOSFET type FLDs or four n-MOSFETs on the base semiconductor substrate, and resistors could be either formed on an FLD layer or polycrystalline semiconductor resistors may be used.
A prior art SRAM cell using a Thyristor has a complicated structure which has a vertical Thyristor and a horizontal MOSFET on same semiconductor substrate. Therefore, this SRAM has process incompatibility with other devices and it is not good for SoC applications.
A nonvolatile FLD memory structure in accordance with present invention is shown in
One of advantages of embodiments of the present invention is that nonvolatile memory could be a ML-VMFLD which stores multi bit information in a FLD. As shown in
In one embodiment of the present invention, FLD memory devices may have redundancy on the same or different FLD IC layers.
One embodiment of the present invention may have block regions in a FLD IC layer as shown in
A capacitor using ferroelectric film 710 is located at the top of the VFLD in
Ferroelectric film 710 used in the illustrative embodiments of
MJT 810 has property of variable electric resistance depending on applied magnetic field, where the electric resistance changes depending on polarization of MJT 810. MJT 810 consists of multiple thin film layers. In general, one magnetic file is free layer which is polarized by applied magnetic field. The other magnetic film is pinned layer and, in general, used along with exchange layer which is anti-ferromagnetic layer. The pinned layer is polarized by applied magnetic field. Therefore, the film stack is called a Magnetic Tunnel Junction Stack (MJT). The MJT is not limited to a structure which has two magnetic films and a dielectric film. The MJT could have combinations of different thin layers. The MJT could be classified to two types by the stacked layers; one is Giant Magnetroresistance (GMR) using non-magnetic material, and the other one is Tunneling Magnetroresistance (TMR) using dielectric layer, such as oxide layer. The VFLD shown in
RSPCF 910 could be chalcogenides and alloy in VI element of Periodic Table. Therefore, RSPCF 910 could be alloy of Ge—Sb—Te, GaSb, InSb, InSe, Sb2Te3, GeTe, Ge2Sb2Te5, InSbTe, GaSeTe, SbSb2Te4, InSbGe, AgInSbTe, (GeSn)SbTe, GeSb(SeTe), or Te81Ge15Sb2S2. Electrode 910 a connected to RSPCF 910 could be TiAIN or TiW, which is stable at 650� C. The VFLD shown in
The PROM can be used in an Application-Specific Integrated Circuit (ASIC), a Field Programmable Gate Array (FPGA), or a Programmable Logic Array (PLA).
The antifuse layer may be formed from an ONO layer, a metallic oxide layer, a chalcogenide layer, or an undoped amorphous silicon layer, but is not limited to these materials. The fuse layer may be formed from nichrome or polycrystalline silicon, but is not limited to these materials. Electrodes 301 a, 301 b for fuse or antifuse may be formed from TiW, which is stable at high temperature.
Power VMFLD 600 has many advantages over horizontal MOSFET. Conventional horizontal MOSFET needs to have long channel length in order to increase operation voltage. However, it causes high cost due to low integration density. However, channel length of power VMFLD 600 dose not change integration density because channel length is determined by vertical height of the SOI layer. Also, because the power VMFLD has surrounding gate, it has low on resistance and its current driving capability is more than twice of conventional horizontal MOSFET. Therefore, the power VMFLD of
If the power VMFLD in
It is to be understood that the present invention is not limited to the embodiments described above, but encompasses any and all embodiments within the scope of the subjoined claims.
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A Campbellsville man was arrested on Saturday afternoon at Burke's Outlet, primarily on drug possession and assault charges, according to a report by Sgt. Shannon Wilson of the Campbellsville Police Department.
Ronald D. Hayden, 36, of Blue Ridge Road, was arrested by CPD Officer Roy Rodgers on first-degree possession of a controlled substance (cocaine), third-degree assault of a police officer, second-degree disorderly conduct, resisting arrest, public intoxication and possession of drug paraphernalia, according to the report.
Last month, Taylor County officials joined others in Frankfort for Heartland Parkway Day.
Dr. John Chowning of Campbellsville University chairs the Heartland Parkway Foundation. That foundation has the stated mission of supporting the transportation project, which runs through Taylor, Marion, Adair and Washington counties.
A Campbellsville man was arrested late Saturday morning at a South Columbia Avenue business after a reported assault, according to a report by Deputy Dickie Benningfield of the Taylor County Sheriff's Office.
A Campbellsville woman was arrested on Sunday, March 15, after she reportedly intentionally hit her boyfriend with her vehicle, according to a report by Sgt. Shannon Wilson of the Campbellsville Police Department.
Kara M. Tennyson of the 200 block of Bell Avenue was arrested on Sunday afternoon on a charge of first-degree domestic assault and is lodged in the Taylor County Detention Center, the report stated. The jail website stated she was there on a $25,000 cash bond.
A child is diagnosed with cancer every three minutes.
And Campbellsville St. Baldrick's is looking to help.
Within the next two weeks, two major local fundraisers for the organization will be held to help raise money for pediatric cancer research.
The annual Shave for a Cure event will start off what is being called St. Baldrick's Conquer Week this Saturday, March 21.
An alleged bank robber pleaded not guilty to related charges in Taylor County Circuit Court Tuesday afternoon.
Thomas E. Riley, 52, of Lexington, will face a pre-trial conference at 9 a.m. on Tuesday, May 19, and a jury trial at 8:30 a.m. on Monday, Aug. 10.
Riley is currently lodged in the Taylor County Detention Center on a $25,000 full cash bond, said Taylor County Circuit Judge Samuel Spalding. The jail website lists his bond at $100,000.
The Taylor County School District's cyber snow days have been a success, to say the least.
During the 2013-2014 school year, Taylor County students missed 15 days of school due to inclement weather. Hoping to avoid a repeat of that this winter, the district applied for — and was accepted — a new program that allows districts to use online or alternative means of instruction when school is cancelled because of weather or another emergency.
Mary Myles was born on Oct. 18, 1929 in Owensboro, Ky., In the late 1950s, she and her family moved to Campbellsville, when her husband, the late William "Bill" Myles, got a job at Campbellsville University.
Myles passed away recently at the age of 85.
While not a native of Campbellsville, her advocacy efforts in the community did not go unnoticed.
'We saw a need in this county.'
Pat Abell had always been concerned with the condition and treatment of animals in Taylor County.
County road crews will hopefully soon be able to start fixing potholes and other damage related to the snowstorm, Taylor County Judge Executive Eddie Rogers said at Tuesday night's Taylor County Fiscal Court meeting.
"Hopefully in the next week or so, if the weather holds up, we will be able to use the new machine," Rogers said. "The road crew are to be commended for a job well done. I know that we did our best to satisfy everybody. Did we satisfy everybody? Probably not, but we did the best that we could under the circumstances."
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The Central Kentucky News-Journal is your source for local news, sports, events, and information in Campbellsville, KY and the surrounding area.


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cant find google.....
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Posted October 17, 2011 at 4:39PM
Im sitting at my father in laws PC and for some reason when I type google.com, or google.co.uk it tells me that the site is unavailable... If anyone can help Id really appreciate it.
Regards Steve
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Posted October 17, 2011 at 5:10PM
I have no problems connecting to google.
Sometimes a corrupt cookie file can cause problems, try deleting your cookies and try again.
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Posted October 17, 2011 at 7:31PM
Thanks Brynit
I have already cleaned and sorted cookies and adware to boot and its driving me nuts now!!! Because that failed to work, but thanks for spending time answering....
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Posted October 17, 2011 at 9:52PM
IE or Firefox - can you connect to any other sites?
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Posted October 17, 2011 at 9:56PM
If you're having trouble accessing a certain web site, make sure there isn't a problem with your Internet connection. Can you reach other web sites successfully? Does the same issue appear if you use a different device or Internet connection? Have you recently changed any settings or installed web browser plug-ins, firewall software, or other upgrades that might be causing trouble?
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Posted October 18, 2011 at 8:46AM
do you use the anti- virus software when browsing , sometimes the wrong settings will affect you on logging some sites ,others may be posted above ! check your PC ! hope that help you !
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Surgeons at a state-run hospital in South Mumbai have removed 232 "teeth-like structures" from the mouth of a 17-year-old boy, who was suffering from "complex odontoma" condition.
Ashik Gavai, a tenth standard boy from remote village Valsavangi in Buldhana district of Aurangabad, started developing this abnormal condition about four months ago.
According to a doctor from Mumbai's JJ Hospital, the boy's parents first approached a public hospital in Aurangabad, which referred him to JJ Hospital while stating that the boy's condition was out of their medical expertise.
"The patient had a painless swelling on the right side of his lower jaw, which was also not looking good cosmetically. The concerned parents then approached a hospital in Aurangabad who referred the case to us," Dr Sunanda Dhivare, head of JJ hospital's dentistry department, told PTI.
"The X-Ray tests conducted on the patient revealed the presence of teeth-like structures, which were not possible to be removed without conducting a surgery," she said.
"The boy and his parents are from a poor background and they could not even afford to pay the subsidised rates of the operation. We had to, therefore, enrol the boy's name in Rajiv Gandhi Jeevandayee Yojana, so that he could be operated free of cost," Dhivare said.
"Ashik has been admitted in our hospital from the last 10 days and the six-hour-long surgery was successfully conducted on July 21 by the hospital's dental and the ENT departments," Dhivare said.
The boy would be kept under observation for the next 10 days, after which his stitches will be removed, she added.


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Mirror Reporter
Times falling for G-H/V girls
Wednesday, 08 May 2013 11:32
It was a good night for the Garner-Hayfield/Ventura girls track team on Tuesday, April 30. The team placed second in a field of eight. Forest City won the meet with 158 points, followed by G-H/V with 116 and Clear Lake with 85 team points. Also competing were Hampton-Dumont, Northwood, Newman, Belmond-Klemme and CAL.
CL girls soccer team out to avenge loss
Wednesday, 08 May 2013 11:30
The Clear Lake girls soccer team will have a chance to avenge their only loss this season when they meet Aplington-Parkersburg in the post-season. The Lions are slated to meet the Falcons in the opening match of the Class 1A Regionals May 28 in Aplington.
Lions top 10th ranked Lynx, 4-2, in soccer action
Wednesday, 08 May 2013 11:20
The Lions broke open a close game at the half and doubled the score on 10th ranked (2A) Webster City in a 4-2 game played April 30.
Area athletes compete at Drake Relays
Wednesday, 01 May 2013 11:45
G-H/V's Larson wins it all in the shot put
It was a record breaking day for Garner-Hayfield/Ventura's Dasiana Larson, who broke the Garner-Hayfield school record on her way to winning the girls shot put at the Drake Relays on Friday, April 26.
Page 147 of 261


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2006 BEST Dry Cleaner, Neighborhood, Beacon Hill
Clevergreen Cleaners
The service: brisk and consistent. It's not often you find a cleaner you can trust with a tux.
Be respectful of our online community and contribute to an engaging conversation. We reserve the right to remove impersonators or personal attacks, threats, profanity, or flat-out offensive comments. By posting here, you are permitting Boston magazine and Metro Corp. to edit and republish your comment in all media.


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Fantastic Local Food
For those living locally, or travelling to the area, there's 9 of the Midlands best lunches on offer for less money until the end of March.
Meals start from as little as £12.95 for 2 courses, and for less than £25 you can have a two course lunch at either of the two Michelin starred restaurants featured.
For a full list of venues and prices see the Great Food Club website.


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Having a chronic illness like ME/CFS can make it hard to avoid problems that come from bad ergonomics. Jody Smith has learned some lessons the hard way ...
Discuss the article on the Forums.
CFIDS Association asking expert signatories about their current position on endorsing the CCC
Discussion in 'Institute of Medicine (IOM) Government Contract' started by justinreilly, Sep 28, 2013.
Page 11 of 12
Page 11 of 12


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Selva Armonia Re-Treat & Eco-LodgeCosta Rica, Puntarenas, Uvita
About This Listing
With breathtaking ocean views, Selva Armonia is a slice of paradise in the Costa Rican rain forest. Stunning and consciously created architecture, botanical gardens and full-service gourmet cuisine. Yoga, wifi, natural pools & waterfalls and more!
Space where guests can cook their own meals
Continuous access in the listing
The listing can accommodate a gathering of 25 or more attendees
Space where guests can cook their own meals
Towels, bed sheets, soap, and toilet paper
Central heating or a heater in the listing
In the building, free or for a fee
In the building, free or for a fee
Continuous access in the listing
Breakfast is provided.
The listing can accommodate a gathering of 25 or more attendees
Easy access to the building and listing for guests in wheelchairs
Private or Shared
Free, in the building or nearby
Posted emergency information and resources
Included in the nightly price.
The Space
Immaculately kept and elegantly luxurious, our space is the perfect space to relax, restore and from which to launch into your next adventure. Walk to our natural pools and waterfalls or just lounge about in our open air living and dining spaces.
Check us out here:
(website hidden)_pRwYV-Go&feature=(website hidden)
Guest Access
• Wifi
• Waterfalls
• Organic gardens
• Breathtaking views
• The world's most beautiful sunsets
• Yoga instruction (upon availability)
• Tour/adventure assistance
• Gourmet vegetarian cuisine with 24-hour notice (when on-site chef is available)
• Kitchen access with 6 or fewer guests in house
Getting Around
We are 3.5 miles (5 kilometers) up a dirt road and a 4x4 vehicle is required to reach our property. It is also useful to reach our beautiful beaches and local destinations.
Driving Directions: http://(email hidden)/directions/
We are located just above Marino Ballena National Park and just North of the Osa Peninsula, the 3rd most biologically diverse place on earth.
Other Things to Note
La Casa Grande: 5 rooms with 2 beds each
Totem House: 2 rooms with 3 beds each $75/night
Private Cabin: 2 beds & private bath $85/night
Available for purchase:
• Private or group yoga instruction (upon availability)
• Breakfast $10, Lunch $12, Dinner $15 with 24-hour notice (when chef is available)
• Wine available at market price. Please inquire
• Taxi/shuttle service support
• Bodywork upon availability
• Adventure/Excursion booking support
Essentials for Happy Jungle Guests (Packing List):
• Flashlight or headlamp (a MUST for Selva Armonia)
• Insect repellant (if you are prone to insect bites, Deet/Off is highly recommended
• Shower shoes/slip off shoes
• Hiking/walking shoes
• ONLY biodegradable soaps, shampoos, etc.
• Sunscreen
• Sun Hat
• Books, music, crafts, art projects or any other items that you love to fill your days with
• Journal/Diary
• Beach gear
• Ear plugs (lots of jungle noises!)
• Non-disposable water bottle (Metal or glass recommended. Please no disposable plastic bottles or bags)
• Cash (U.S. dollars are accepted all over Costa Rica and Panama)
Please observe:
Shoes off in all structures, 10pm quiet time, smoking only in the parking lot area, no pets.
Selva has a staff that lives on the property and we welcome you into our home.
18 Reviews
Great place with an amazing aerial view on the Ballena (whale's tail on the coast). Zen ecolo attitude, warm welcome, beauty & nature.
I was treated like a queen at Selva. The staff was not only accommodating, but personable and warm. They greeted me with the best hugs upon my arrival, as if they had known me for years. I loved their energy, spirit, and strong work ethic to keeping their eco lodge looking beautiful and their guests blissful. Heidi was soulful and made me feel so welcome. Katherine's bubbly spirit was contagious, and Jason's vegan culinary skills were a true talent, the kind you are born with that no amount of training could teach you. I was so lucky to have met these wonderful people.
The pictures were spot on- this was the most alive, beautiful, and peaceful place I have ever visited. Though a little off the beaten path (15 minute bumpy ride to the main road) the remote area became an added benefit of keeping the Selva pure and serene. I had everything I needed within walking distance- a yoga deck overlooking the ocean, hiking trails that led to gorgeous waterfalls and swimming holes, and endless species, plant life, and scenery to watch and be amazed by every day.
I did venture to the main road and was able to explore Whale's Tail and stroll the friendly neighborhood. It was delightful.
I recommend this hidden treasure to anyone looking for the true, authentic, and meaningful experience of Costa Rica. I will be back again!
What a wonderful hidden gem in the hills of Uvita. Couldn't have asked for a better and more rejuvenating spot!
Heidi was a great host we felt very welcome at the place. the rooms were awesome nice and clean the jungle wildlife was amazing to be so close to. a teacher training was being held while we were there which was actually very refreshing and fun to talk with the students and be part of the vibe of the place. the food they offered here was amazing coffee every morning and the view of the whale tail was to die for it was simply stunning. i would love to stay here again either at a yoga retreat or through airbnb.
We really enjoyed our stay at Selva Armonia. Beautiful location up on the hill with view to Uvita beaches. Heidi was a nice and welcoming host, even allowing us to join a yoga session with a new instructors class. The food was also very good in the main building which is large and tastefully designed and laid out with a few 'chill' areas for relaxing. The room was basic but very nice, clean and eco friendly built with recycled materials. We only stayed 1 night but wish it was longer. There is also apparently a waterfall nearby for swimming but we did not make it there. Next time!
We feel very privileged to stay in such a beautiful space. A fantastic location in the middle of the jungle. We saw so much wild life. The room was lovely too. Lilith looked after us really well and was the perfect host. Thank you.
We had a great time at Selva Armonia. The site is simply amazing: in the middle of the jungle with hauling monkeys and toucans with all kinds of fruit trees and flowers, the rooms are big enough and the common areas open and beautiful . Although we were not part of a yoga retreat, Heidi was kind enough to give us a yoga lesson. We had the place to ourselves. We wish we could have spent time with Heidi and company so I hope to be back.
This host has 3 reviews for other properties.View Other Reviews
About the Host, Katherine
As Hotel Manager, I am delighted to share this special place with you. This land has transformed me. While living and working here, I get to practice yoga every day. From being in touch with nature to eating vital healthy foods, to working alongside truly amazing people, I am blessed to call this sanctuary my home. Come, be at home.


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LUBBOCK, TX – The estranged daughter-in-law of City Attorney Sam Medina made a written statement through her attorney Tuesday.
Angelina Medina's attorney, Audie M. Reese, said there is an "ongoing investigation of the criminal acts of Sam Medina."
On Monday Sam Medina asked that he be placed on paid leave amid an allegation of sexual assault by Angelina Medina. Mr. Medina vehemently denied the allegation.
The divorce with Sam Medina's son, Erik, has been described as "bitter" and "vicious."
Reese said, "We prefer and trust that our justice system will allow this young woman to protect her rights and the rights of her children by revealing the truth and by not allowing these rights to be overrun and trampled by power, position, and money…"
Reese also said Angelina Medina "does not wish to pander to public opinion on these very private matters."
On Tuesday, City Councilman Victor Hernandez said he is taking a "wait and see attitude." As a lawyer Hernandez said he understands the American principle of "innocent until proven guilty."
"I have no problem placing him on paid administrative leave for a period of 30 days," Hernandez said.
The City Council has a specially called meeting for Thursday afternoon. An item on the agenda allows the council to consider Medina's future "including but not limited to placing the City Attorney on administrative leave." That same agenda allows the City Council to "to hear a complaint or charge against the City Attorney."
Only complicating matters, City Councilwoman Latrelle Joy is the attorney representing Erik Medina in the divorce case. Joy said she can't comment.
Mayor Glen Robertson on Tuesday said, "It's a distraction. It diverts our attention from where it really needs to be."
Last week EverythingLubbock.com made an open records request for the job evaluations of the City Manager, City Secretary and City Attorney. During Thursday's meeting the council will consider how to respond to the open records request.


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Adam Levine's got moves like Jagger and apparently a mustache like Burt Reynolds.
The Maroon 5 frontman stepped out on the set of Can a Song Save Your Life? in New York City Monday sporting some intense facial hair.
But if you're not a fan of Levine's new look, fret not…
MORE: Check Out Zac Efron's Manly Mustache
It's already gone!
The Voice coach had a smooth upper-lip just a little later in the day. (Whether his 'stache was fake or he did a quick shave, we may never know.)
Levine, 33, stars alongside Keira Knightley in the upcoming flick.


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As many as 4,621 persons who have been allotted houses in 40 layouts under the JNNURM face cancellation of allotment as they did not pay their share.
The January 31 deadline for payment has been communicated though the media but since they have failed to pay their share, the same would be allotted to others, Municipal Commissioner M.V. Satyanarayana said in a statement. Of the 11,981 that have been allotted the houses, only 7,360 paid their share.
Majority of them belong to Allipuram Lorry Stand, Appannapalem, Kommadi K 1, K 3, Madhurawada M 1, Kapparada, Mantripalem, Pineapple Colony, Paradesivanipalem PP 1, Pedajalaripet, Pendurti, Pulagalavanipalem, Talarivaipalem.
Meanwhile, Mr. Satyanarayana who visited the houses constructed at Lankelapalem, Madinabagh and Talarivanipalem on Friday directed officials to get them ready for inauguration in March. Allotments should be made on lottery basis. Chief Engineer B. Jayarami Reddy said while the houses at Talaripalem were complete in all respects, at Lankelapalem internal roads and drinking water facilities would be completed on a war-footing. However, officials brought to the Commissioner's notice the reluctance of some slum-dwellers to live in pucca houses.
Keywords: JNNURM, Visakhapatnam Municipal Corporation


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Results 1 to 7 of 7
October 22nd, 2009 #1Registered User
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Spawn painting - Please critique!
Here is a work in progress of a medieval spawn painting. I feel a little stuck at this stage. Some areas need work and clarity. I don't like how blurry this image is at this point. Any feedback/critique would be greatly appreciated. I am mainly looking for suggestions on the readability, paint quality, color, saturation, brush work and tonal but feel free to input on any aspect that you think could help.
Last edited by Jordan Lamarre-Wan; October 23rd, 2009 at 02:25 AM. Reason: url was wrong
Hide this ad by registering as a memberOctober 22nd, 2009 #2
It's a pretty large resolution to critique - could you attach a smaller image?
October 22nd, 2009 #3
I like you color choices and the overall environment you've created. Also it's very dynamic in the positioning.
Few things to think about:
1. You should sharpen up some of the details, the entire pict has a general fuzziness to it.
2. Spawns upper body and head are two big, we're looking up at him, so he should be receding into space a bit more...it will also help make the position look more dramatic.
3.The horse's chest and legs should be worked on some more, it all gets a bit lost down there, the chest also seems to shallow, but they may have to do with the shadows.
You might also think about adding some more space to the bottom of the pictures. so that spawn is higher up in the composition....it's just another way to increase the drama and open it up a bit.
Overall though it's looking good though, just needs tweaking.
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October 23rd, 2009 #4
I think your image is way too large so ive uploaded a reduced size one. I suggest changing the size to this in the future when posting. My eye goes right to spawn so good job on that. I dont like the bottom portion because it doesnt make any sense. Its not readable. I dont like the horses eyes. They are too human and alive for me. I suggest making the horses more heroic and spawn like. I think the cape and cloth look good. That light coming through the cloth is great. I think the hand on the sword should be looked at more. Try to bring the feeling through things like that. To me this image of spawn is about him looking strong and heroic. He should have a firm grip on the handle to show his strength and intent. Im not sure what is going on in the top right, the light seems to be covered by something. Maybe a shield. That doesnt read well and the materials dont work either. Hes spawn so he spawns armour. I suggest taking it all a little more midevil.the kneepad looks like something from WOW. Do some research on shields, helmets, armour, and even horse armour, and push the scene more.
Just some ideas Lots of potential!
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October 24th, 2009 #5
Looks dope. Nice work on the angles, its dynamic. As mentioned Id really try and tighten up your main focus's.
One part that really stands out to me Is the Purple on Spawns Knee. Its pretty strong to me, but I honestly don't thing the knee needs the purple on it because of the horse's body blocking that light source. You could probably tone down the purple on the far left figure too. I cant imagine him picking up to much purple either.
Just my thoughts.
Looking for ward to seeing the Finish
Daniel Andrews
Email: firstname.lastname@example.com
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October 24th, 2009 #6
More hard edges. Especially on areas that are bright or high contrast or the focal point of the image. but don't make the entire image crisp/shark in focus, that would probably put most viewers on overload considering how much you have going on in this image.
Last edited by Truepinkas; October 24th, 2009 at 10:48 AM."...To spend my life relentlessly producing instead of sedately consuming..." -xkcd
My site: www.truepinkas.com
Slowly populating my It's Finally Finished thread!
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October 24th, 2009 #7Registered User
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I am certainly not an expert. Your skills are much better than mine.
Having said that:
The sword handle doesn't look lined up correctly with the blade. They look to be different angles. Perhaps the blade is meant to be shaped in a unique way? I can't see the rest of it to know.
The horse looks "happy" in a friendly way. For the situation he is in, you might consider a harder, more battle-hardened look.
The figures in the bottom right do not seem to be reacting specifically to Spawn, but are rather just there doing their ghoul thing. Of course, that could be due to the situation and location. Maybe they were suprised, or maybe they are reacting to something else...
The shield is a bit unclear to me that it was a shield. I had to look at it 3 times to really notice it fully. That might be because a lot of it is offscreen, and I can't see it acting as a shield (blocking anything).
The lighting is good. The pose is good, and very action oriented. The sword arm is a great action pose. It is a bit blurry, but it is a work in progress.
Very great work, man! Keep going! This is definitely a sign of talent.
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Cheap YMX to Okayama flights
Popular Flights from Montreal, Quebec
Top Montreal Flights to US Destinations
Top Montreal International Destinations
Popular Flights from Okayama, Japan
Top Okayama Flights to US Destinations
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YMX to OKJ Route Map
Montreal to Okayama Flights, Stats and Airplanes
Route information for flights from Mirabel Intl. to Okayama.
6,612.44 miles
OKJ - Okayama Airlines
Browse the most popular airlines servicing the Okayama (OKJ) airport. Visit their flights pages to learn more about the most popular routes these carriers fly.


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Search the Collection
Katharine Marjory Stewart-Murray (née Ramsey), Duchess of Atholl (1874-1960), Public servant; wife of 8th Duke of Atholl; daughter of Sir James Henry Ramsay
Sitter in 7 portraits
Public servant; often remembered as 'the Red Duchess' , in 1923 she became the first woman member from Scotland elected to the House of Commons. As a self-proclaimed crusader against international cruelty, she visited Spain and became actively involved in the care of Republican refugees. Her open criticism of the Conservative government's toleration of Franco cost her her position as party whip.


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Research Output for Jane Pappin
Note: The 2012, 2013, 2014, 2015 publications have not been audited.
Jump to: Publications | Grants and Consultancies | HDR completions
2001 School of Biological and Chemical Sciences
Barnett, Neil, McGillivery, Duncan, Pappin, J. and Chambers, P.* (2001) Determination of tartaric and malic acids in ripening grapes across the cool climate region of Geelong, Australian grapegrower and winemaker, vol. Annual technical issue, pp. 15-18, Ryan Publications, Adelaide, S.A. [C3]
ERA journal ID: Not matching ERA journal list
DRO entry for this publication
Grants and Consultancies
No grants and/or consultancies found or audited – the 2014 HERDC financial return has not been completed or loaded as yet.
Higher Degree by Research Completions supervised by Jane Pappin
No completions found or audited.
- Legend:
- * Not a member of Deakin University at time of output.
DRO to publications collection last synchronised: Saturday 30th May 2015 10:04pm


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Hunters may now submit their online and paper applications for the 2014 spring hunt draw for turkey, javelina, buffalo and bear. The deadline for all applications is Tuesday, Oct. 8, by 7 p.m. (MST). Don't wait until the last minute, as technical issues can occur on deadline day. To apply online, go to www.azgfd.gov/draw and select the link for hunt ... Read More »
Author Archives: rhettFeed Subscription
Application deadline for Arizona Game and Fish Commission is Sept. 20
Application deadline for Arizona Game and Fish Commission is Sept. 20 Sept. 9, 2013 The Governor's Office is currently accepting applications for the Arizona Game and Fish Commission. Applications must be received or postmarked no later than 5 p.m. Friday, Sept. 20, 2013. Applications received or postmarked after the deadline will not be considered.Governor Jan Brewer is seeking ... Read More »
High Quality Deals, On High Quality Items
We're just kicking off hunting season, and what a better way to open up the season with great deals on hunting gear. Just recently Santana Outdoors has begun to offer a free item to choose when you purchase Sitka Gear items. It doesn't stop there, we have also discounted all of our First Lite clothing, which is some the most ... Read More »
Timberline Pants by Sitka Gear
Santana Outdoors is a proud carrier of the Sitka Gear Timberline Pant. A number one seller in its class, the Timberline has much to offer. Extremely durable, and built for rugged terrain, the Timberline pant will cater to the stalker. With removable knee pads, waterproof knees and seat, and a DWR finish, the Timberline pant is an outstanding choice ... Read More »
Badlands Packs up to 20% off
Santana Outdoors is pleased to announce that it is continuing its sale on Badlands Packs up to 20% off. This sale does include the new model of the 2013 Badlands Packs 2200 backpack. Come see us and find great savings on all the new Badlands Packs including the Badlands Summit, Badlands Point, Badlands clutch, and many more plus all ... Read More »
Eberlestock H7 Dagger Backpack
New to the market, the Eberlestock H7 Dagger Backpack ! The Dagger can be used alone, or attached to other Eberlestock packs with MOLLE webbing. Scabbard compatible, this fast moving lightweight pack was built for hunting or tactical missions. *1 lbs 14 oz *340 cubic inches * includes a best-in-class Source™ Hydration bladder (2L) *compatible with the A1SS, A2SS, and ... Read More »
Eberlestock H3 Sawed Off Backpack
The new Eberlestock H3 Sawed Off Backpack, a great addition to both hunting and tactical type day packs!! Superior choice for those half day or full day outings, allows plenty of room for ammo, clothing, food, and of course hydration (included). Similar in size to the Gunrunner, The Eberlestock H3 Sawed Off Backpack is also scabbard compatible. *855 Cubic inches ... Read More »
Santana Outdoors Clearance Rack, Up To 50% Off!!
Don't miss out on a great opportunity to save big $$$. Check out our Clearance Rack, where you can find items discounted up to 50% off!! From game cameras and accessories, clothing, archery, and much much more. Hurry while supplies last on these great deals!! http://www.santanaoutdoors.com/servlet/the-Clearance-Rack/Categories Read More »
Seeking Predator Calling Tips
I have hunted predators here in Arizona for a number of years but I always like to talk with other people about what they do for success, and new techniques. For my first few years I had a wooden Carlton call that seemed to work out OK, I had success with it but not as much as I wanted too. ... Read More »
Winner of the blog grand opening announced
Congratulations to Mike Deverso!! Mike you were selected out of all the entry's for the $200 towards an Eberlestock, Sitka, or Badlands Pack of your choice on Santanaoutdoors.com . Please step forward and claim your prize Mike. We would also like to thank all of you who participated in this grand opening celebration, and we would love to see all ... Read More »


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The 113-acre park was gifted by Sayaji Rao in 1879.
In March 11, the residents of Baroda will celebrate the 150th birth anniversary of Sayaji Rao, a prince greatly loved by his subjects.
Many places in Baroda (Vadodara) are named after him, including the park, which he dedicated to his people 123 years ago.
Sayaji Rao dedicated the 113-acre park to the people of the State in 1879. Situated along the banks of the Vishwamitri, the park is a treasure house of recreation and a repository of not just art but some exclusive artefacts.
From the outside, the park looks like any other. Cars and buses vie for parking space and a tow vehicle is on the prowl. The roads are busy and noisy all day.
But once inside the park you are transported to a fantasy world.
Keeping time
The floral clock was conceived by Mohan Patel, who was the Director of Parks in the Vadodara Municipal Corporation. The Corporation sanctioned Rs.45,000 for the clock, which was built by New Delhi-based Beauty Watch Company. On January 26, 1975, the clock became a part of the park. Each hand of the clock weighs 22kg. Rajendra Shah, Vadodara Tourist officer, says the clock whose diameter is 40 feet has never faltered. "We have a technician who ensures that the clock is well maintained. The error is minimal," he says.
Vadodara has experienced floods after torrential rains several times. On at least two occasions, deer in the zoo perished during the floods. Once there were reports that crocodiles from the zoo escaped into the Vishwamitri. But the clock has never stopped. The variety of flowers that make up the clock have attracted film makers.
The film "Dream girl" starring actors Hema Malini and Dharmendra was among the first to be shot with the clock in the background.
The Toy Train
The toy train was a gift from Sayaji Rao Gaekwad to his son Ranjitsinh on his third birthday. The royal children travelled by train from the palace to school. The train was built in 1928 by the British company Flying Scotsman.
On February 13, 1960, the Gaekward family gifted the train to the people of Baroda. Since then, the 3.5km stretch railway line is used to transport children below 12 years around the park. The tiny train runs on a track with a width of just 10 inches.
Fatehsinh Museum
It is one of the few museums in the country which houses an Egyptian mummy besides some rare Mughal miniature paintings. The museum was designed like the Victoria and Albert Museum in England. As you enter the museum you will be greeted by the skeleton of a large blue whale.
Suspended bridge
The park also had a suspended bridge over which one had to walk carefully. The bridge was built by the British in 1895 at a cost of more than Rs.15,000 at that time. It collapsed in 1965 and was never repaired or replaced.
Keywords: The Royal Park, Baroda, Sayaji Rao, Vadodara, toy train, suspended bridge, Flying Scotsman, Ranjitsinh


text: If you play the Slav, then you have to accept that your opponent might play the exchange variation and a fairly boring position is quite likely. I suspect 7..... b6 is not a very good idea, Bb5+ might be annoying. You should probably try to play a6 before e6 and try to develop your Bishop to f5 or g4.


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UW-RF Home > University Communications Home > This Month's News Releases
University Communications
For more information contact email@example.com.
Presentation Focuses on Area's Geology
AUG. 18, 2009 | University of Wisconsin-River Falls geology Professor William Cordua will be giving a free, public presentation on "The Geology of the River Falls Area," at 2 p.m. Saturday, Aug. 22, at the River Falls Public Library at 140 Union St., River Falls.
Following the talk, Cordua will be available to help identify geological specimens brought in by the public. Attendees are asked to bring no more than three samples per person.
On exhibit in the librarys lower level area is an 11-case display of rocks, minerals and fossils from the UWRF geology collections. The display runs through Friday, Sept. 4. The collection contains beautiful minerals from around the world, but also focuses on Wisconsin minerals and the geology of the Pierce-St. Croix County area.
For more information contact the River Falls Public Library at 715-425-0905.
Last updated:
Thursday, 22-Apr-2010 16:09:47 Central Daylight Time
University of Wisconsin - River Falls


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Poor, minority residents face most health risks with climate change
A bill introduced in November by U.S. Rep. Lois Capps, D-Calif., also calls for the development of a national strategic action plan to respond to "rising health threats from climate change."
These efforts have been applauded by the American Public Health Association.
"If you think about the history of public health, our history has been all about making sure that the water is safe to drink, the food is safe to eat, and the environment is safe to be in, and all of those things can be disrupted with climate change," Benjamin said.
But climate change skeptics say California's climate-and-health analysis is misleading and unnecessary.
Richard S. Lindzen, a professor of atmospheric sciences at the Massachusetts Institute of Technology and a prominent climate change skeptic, said the issue is often erroneously conflated with extreme weather or natural disasters.
"In California, if you have extremes of warm or cold weather, it's not due to global warming; it's due to which direction the wind is blowing," Lindzen said. Public health departments are merely "coming along for the ride," he said. "As far as I can tell, the global warming impact on California health has to be immeasurable at this stage."
UC Berkeley physics professor Richard Muller, a onetime skeptic who changed his position on climate change after conducting research funded by other skeptics, said that while "there is evidence of climate change that is visible to scientists but not to the everyday person," the state public health department's analysis is of limited use.
"It's certainly true that the poor people of our state are always the most vulnerable to any change whatsoever – you don't have to do an analysis to figure that out," he said. "If you want to spend money on the poor, I suspect preparing for climate change is the least effective way to do that. The poor will always need help, and I don't think it should be spent on something like a fad like climate extremes and predictions that things might get worse."
The Union of Concerned Scientists disagrees. According to a 2011 study [PDF], California would experience the "biggest economic impacts and the biggest heath impacts when ozone and temperatures increase" due to climate change, said Elizabeth Perera of the union's climate and energy program. That study projected that an increase in ozone pollution would result in about $729 million in related health care spending in California in 2020.


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In This Issue:
The Dubious Claims for Diet Supplements; Sports and Energy Drinks Deliver Caffeine Plus Empty Promises; Better Eating Habits Beat Supplement Fads; Recent Health Care News You Should Know About; and, Check Out Our Previous Tips.
Eat, Drink and Be Wary: The Truth aboutDiet Supplements and Sports Drinks -
For whatever reason -- no time to cook, picky palates, fondness for fast food -- Americans are always looking for ways to enhance their diets and improve their fitness that don't involve consuming actual food. The market for vitamin/mineral/herb supplements and energy/sports drinks is strong and growing.
The truth is different. If you don't have a diagnosed disorder whose treatment requires nutritional supplementation, swallowing these products is wasteful at best and harmful at worst. This month, I review recent research that reinforces the folly of using products whose benefits just aren't there.
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Metal Gear Solid: The Twin Snakes
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Metal Gear Solid: The Twin Snakes Walkthrough >
3. Beginning > Vulcan Raven (1)
This guide has been broken into chapters. Please click the appropriate link to find your answers. Because this is the free version, you will be served a few ads in the process.
1. Introduction and Controls
2. Weapons and Items
3. Beginning > Vulcan Raven (1)
4. Nuke Building > Sniper Wolf
5. Medical Room > Vulcan Raven (2)
6. Warehouse North > End
Metal Gear Solid: The Twin Snakes Review
Metal Gear Solid: The Twin Snakes Ad-Free and Printer-Friendly Walkthrough and Strategy Guide
LB's Ad-free and Printer-Friendly
"Metal Gear Solid: The Twin Snakes"
Walkthrough and Strategy Guide
You are Solid Snake, a retired FOXHOUND soldier. The Colonel has located you in Alaska for a special task. Watch the introductory briefing for details. From the beginning, choose your difficulty level. This walkthrough is written based on a "Normal" difficulty. Difficulty only has to do with the amount of damage you take, and the amount of damage your enemies take. The game remains the same (although rarely weapons are in different places). Also, choose your Radar Type. In the game you have a radar in the top right corner of your screen showing you where you and your enemies are located. If you choose Radar Type 1, your radar will remain where it is if you are spotted. If you opt for Type 2 is will disappear until things cool down a bit. We chose Type 2, but do whatever you need to do.
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After the introductory cutscene you are thrown into your personal radio, or Codec. This is how you will contact members of your team. As the game goes on, you will be taught new frequencies to contact members of your team who will help you get through the game. Once you learn them they will be put in the Codec's Memory. To activate your Codec, press the "Start" button and "A". Do the same to exit.
It is revealed in your first conversation that you need to make it to the elevator along the North side of the room. The elevator needs some time to make it to your level first, and you really need to avoid being spotted. So, before heading to the elevator, go ahead and jump into the water down the stairs in front of you. Watch your O2 meter and collect the Ration (Health) and the AP Sensor under the water. Climb up the stairs leading you back to your entrance. To get out of the water, press your back against the ledge and hit the "Y" button.
Above the water now, press the "L-Trigger". This will show you items in your inventory, along with the Ration you just picked up and the AP Sensor. Simply select the item you are interested in and follow the directions on activating it. I recommend equipping the AP Sensor now as you're about to be stealthy.
It seems you are trapped in this area. Not so. Notice the pipe above the puddle by the wall? Crawl by hitting your "X" button and move under the pipe to the other side. Hit "X" again to stand up. Watch your radar and avoid the men as you make your way to the North side. If you run and enemies are close, they will hear you. Move slow to avoid them. If their field of vision (the blue cones coming from the enemies on the radar) turns green, they're suspicious. If it's red, they know you're there. Stay out of their line of sight and use the crates for cover.
At the North wall, notice the lockers along the left side. The locker farthest to the left has an M9 inside (On Very Easy Mode the M9 is actually next to you at the beginning, on Easy mode the M9 is actually outside of the locker, and on Hard and Extreme Modes you won't get it until you hit the Armory). Open the locker with "Y" and walk into the locker. Snake should automatically close the locker behind him. Wait here and watch the guard who is circling around the crates in front of you. When his back is to you, sneak out and shoot him with your M9.
Shooting in this game is a bit "different". First off, hit the "R-Trigger" and select your weapon. You can shoot people in third-person mode, but first is more accurate. So, go into first-person mode by hitting your "Z" button. Pressing down on the "A" button will target someone (notice the red laser). Then, releasing the "A" button will actually fire the shot. Honestly, it takes some practice, but it becomes second nature rather quickly. This is a good area to practice, as, if you die, you'll just start from the beginning, which isn't far away.
At this point you should get a cutscene of the elevator coming to your floor, and a man inside the elevator. Hide from the man and try to make your way to the elevator unnoticed. However, chances are you will be spotted. Take out the enemies with your M9. Once they're down, step into the elevator.
Here you'll get a cutscene and some Codec information. The most important information is that of saving. To save, contact Mei Ling at 140.96.
You are also given your next objective: Get into the building in front of you by entering one of two ducts. One is on the ground, the other is up the stairs. This walkthrough will guide you to the duct on ground level.
With your M9 equipped, run up onto the Heliport. When the lights split, run down the center and collect the Chaff Grenades. Run down the stairs in front of you. Approach the back end of the truck in front of you and hop in by pressing up against it at hitting "Y". Behind the crate grab the SOCOM. Wait until it is clear and exit out. Check your radar and notice an open room along the west wall of the area. There is a security camera in the room, so, before heading in, toss in the Chaff Grenade and wait for it to jam the camera. Enter the room and collect the Stun Grenades from the locker.
Exit out and head north, along the west wall. Hide behind the crates. Notice a guard who is falling in and out of sleep along the north wall. At his feet is the duct. Wait until he sleeps (notice the Zs coming from him), step out and toss a stun grenade his way. Run to the duct (you will most likely be spotted) and simply crouch ("X") and crawl forward.
Inside the duct, crawl forward, then left, then right. Go all of the way to the end and look right. Here you'll get a quick cutscene (if you were spotted outside). Now, backtrack and you'll see some rats. You'll be called by "Master". His frequency is 141.80 if you ever need to talk to him. You'll also be told the "rats" are, in fact, mice. Follow them through the vents (through the water) and to the opening.
Wait here until you are sure no guards are in front of you. Crawl out of the vent, stand up and run toward the tank in front of you. Run to the tank for cover from roaming guards and you'll get a call from Campbell. He tells you of a cargo elevator in the area. The elevator is, again, along the north side. Avoiding the guards, make your way to the elevator, stand next to the control panel to the right and hit your "Y" button to call the elevator. It will take a few seconds for the elevator to make it, so continue avoiding the guards. When the elevator gets to you, step inside, turn around and face the control panel to the right of the open door. Use your control stick and select B1, then "A".
Exit the elevator. There are no guards here. You get a Codec message that the DARPA Chief (who you are currently supposed to be rescuing) is the flashing green dot. You can't get to him directly, so make your way to the southeast section of the floor and find the ladder. Next to the ladder is a vent opening. Crawl into it to find a Ration, then backtrack out (the vent leads to a dead end). Hit "Y" to climb the ladder.
In the vents, head left, then left again. Watch the man use the facilities below you, then continue along and collect the M9 Ammo. Turn around to the main vent and head left again. Follow the vent to a cutscene of a locked up woman, followed by a man. Once you find the man you will come to a very, very, very long cutscene. This is the DARPA Chief, Donald Anderson. Long story short, nuke launching by terrorists is a possibility with a little something called "Metal Gear Rex" (we have a title!). You have the DARPA Cheif's trust and he gives you his Level One Security Card. Then, he dies. You are left to escape his cell.
Before doing anything, crawl under the bed and collect the Ration. Wait a second and the cell door will open up. Here you'll find a naked man, and the woman from the cell next door who has escaped. After a little song and dance, it's time for you to start shooting at the men who are coming in through the door in front of you. First, step back and collect the SOCOM behind you (if you didn't already from the truck in the Heliport). Then take aim and shoot the men coming through the door in front of you. Head shots are best. If you run out of Ammo, there is some in the locker in the office next to you and there is some in the bathroom next to the office. As the enemies die many will drop Rations or Ammo. Pick them up. Eventually, you'll get a cut scene. The woman will disappear and you'll "hallucinate". After the cut scene, Naomi will explain that the hallucination was caused by Psycho Mantis. Return to the office and bathroom to collect anything that is remaining. There is a book in the bathroom which can be used to distract enemies if you set it down on the ground.
Go to the elevator, call it, enter and go down to B2.
Call Campbell on your Codec and he'll explain that you're looking for sections of the surrounding wall that look different. These sections can be blown up with C4. You are safe here, there are no guards, but there are some trap doors so be careful. You will see six storage rooms. You can enter the storage rooms that have a Level 1 Security, and there are a few with no security clearance required. Collect what you can from the accessible storage rooms. You will find C4, Grenades, and Ammo. Once you've collected everything, move to the southwest corner of the room. Face the south wall and go into First Person View. Notice the cemented-over section of the wall. Place a C4 near that section with "A", step away, and then detonate the C4 with "B". Pass through the hole. (Please note there are two other cemented over sections in this room, on both sides of the elevators...blow them to collect the goods inside).
Run down the hall. At the end of the hall you'll see a white section of the wall. Use C4 on it. Pass through. Again, find the white section of the wall, use C4 and go through. Here you'll run into Kenneth Baker who is rigged with trip wires linked to C4. Don't touch the wires.
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You are fighting Revovler Ocelot. Arm your SOCOM and run back and forth avoiding Ocelot's fire. Notice at the top of your screen the indicator showing how much ammo he has in his pistol. When he runs out and goes to reload that is your opportunity to fire at him. Face him, go into First Person View and shoot him in the head. Simply repeat this process until his meter runs out.
Note that if you run toward him, he'll run away, so it's best to keep your distance. And, also remember that the trip wires are still live so if you run into those, game over. Once his meter is down you'll get a cutscene and a half. First, you'll be introduced to invisible Ninja guy. He helps you, but is he on your side? You don't know. Post Ninja, you'll have quite a conversation with Kenneth Baker. His story is pretty much the same as the DARPA chief's: A terrorist attack with Metal Gear Rex's abilities is a reality. And, just like the DARPA chief, Baker dies upon handing you his Level 2 Security Card and the MO Disc.
Contact Campbell again and he'll tell you that Meryl (the masked woman in the holding cell) has the detonation code release keys. You are told to contact Meryl with the frequency written on the back of the "package". The "package" is actually the game box that the game came in. If you rented the game, you won't know this. Pretty rotten. The frequency is 140.15.
Contact Meryl using the 140.15 frequency. Meryl lets you know that you look just like Liquid Snake. Hmm? She tells you how to get in touch with Emmerich who is the designer of Metal Gear. He is in the research lab in the 2nd-floor basement of the Nuclear Warhead Storage Building to the north of the armory.
Meryl also tells you there is a cargo door on the 1st floor of the building you are in. That is where you are headed.
Collect the ration in the middle of the room then exit out the Level 2 door. You will be in the Armory again.
This time there are guards in the Armory. Now that you have a Level 2 Security Card you can into the southeast storage room. Enter it and then quickly crouch and crawl because there are invisible security lasers in the middle of this storage room. Collect the FAMAS, FAMAS Ammo, and Box 1 (a cardboard box that you can hide under). If you trip the lasers, kill anyone who comes into the room. It's best that you don't trip the lasers. Crawl back under the lasers and make your way back to the elevator on the north wall, while avoiding any guards. Call the elevator and go to Level 1.
Upon arriving on the 1st floor, Meryl will contact you and warn you of the dangers behind the cargo door. She tells you of lasers that, when tripped, will lock you in the cargo bay as poisonous gas will seep in and kill you. Good to know.
The cargo door is next to the elevator. It is already open for you. You can easily sneak in from here, but, before passing through the cargo bay door, you should have a Mine Detector. It's not vital to gameplay, but it does help. Also, since you now have a Security Level 1 Key you can pass through the Level 1 Security Door on the east side, take out the guard and collect the SOCOM Suppressor. The SOCOM Suppressor is a silencer for your SOCOM.
The Mine Detector is located in an office on the second floor of the Tank Hangar. Run to the west side of the room and locate the stairs leading up to the second floor walkway. Climb them to the halfway point, then notice the security camera above them. Avoid it as you make your way to the top.
Run forward and pop into the west room. If you are spotted running into this room, slide yourself behind the stack of crates in the northwest corner of the room. Guards will, most likely, not spot you here. In this room, grab the Chaff Grenades and exit out, making your way along the walkway to the other side. Notice the guard walking along the east section of the walkway. You need to slip by him. I found it best to off him with an M9 shot to the head when his back was turned. Once he's down, make your way to the office behind the Level 2 Door, near the end of the walkway.
In the office, collect the Mine Detector and the Ration from under the desk. Exit out. Don't backtrack. Instead, go to the end of the walkway (avoid the security camera here) and jump over the ledge by pressing "Y" and fall to the ground below with "X". The cargo door is right next to you. Go through it.
Inside, equip your M9 and shoot the fire extinguisher so that you can see the lasers. The lasers move up and down. Time each section and go under. Sometimes it's a little hard to see which laser goes with what, so pay attention to the right side where the lasers are generated. If you trip a laser, you'll die. Just try it again. When you get through successfully approach the door on the other end and it'll open for you.
Move forward and you'll get a call from "Deepthroat". He'll warn you of mines ahead. Thank goodness for the Mine Detector you just found! Equip it and check your radar for mines. Work your way to the North end where you will encounter Vulcan Raven and his tank.
The best way to take out Vulcan Raven and his tank is by tossing grenades so they hit the enemy manning the mounted gun on the tank, itself. Tossing them close him does a little damage. Tossing them in the hole where he is sitting will do a lot of damage. It's really not that difficult. Just get close to the tank and chuck Grenades toward him...I believe the game is pretty generous with accuracy here. Avoid any grenades that miss him and ricochet back toward you. Also, avoid the tank, itself. You can slow the tank down by tossing grenades at its tracks. There are more Grenades in the area, along with other kinds of ammo worth collecting. Also, remember your "Y" button will pull you out if you fall in the nearby ditch.
Note that the tanks is equipped with an electrical system of sorts. To get close to it without being nailed with missiles, toss a Chaff Grenade toward it. When it blows, it won't be able to track you, giving you an opening.
After you toast the first guard, you'll have a second guard (and a refilling of the life meter) to deal with. Simply repeat what you've been doing until you run the second meter out. Then, watch the cutscene. You are a wanted man.