text:
US 20060286737 A1 Abstract A thin film transistor comprises a zinc-oxide-containing semiconductor material. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating a thin film transistor device, wherein the substrate temperature is no more than 300¯ C. during fabrication.
Claims(43) 1. A method of making a semiconductor thin film, for use in a transistor, comprising a zinc-oxide-based semiconductor, the method comprising depositing a colloidal solution of zinc-oxide-based nanoparticles on a substrate, at a temperature of 300¯ C. or less, wherein the nanoparticles are the reaction product of a mixture of reactants comprising an organozinc precursor compound and a basic ionic compound, wherein the nanoparticles have an average primary particle size in the range of 10 to 150 nm and are colloidally stabilized in the colloidal solution, and wherein the level of inorganic ions in the colloidal solution is below 1 mM and the level of organic compounds, or salts thereof, is below 5 mM.
2. The method of
3. The method of
4. The method of
5. The method according to
6. The method of
7. The method of
8. The method of
9. The method of
10. The method of
11. The method of
12. The method of
13. The method of
14. The method of
15. The method of
16. The method of
17. The method of
18. The method of
19. The method of
20. The method of
21. The method of
22. The method of
23. The method of
24. The method of
25. The method of
26. The method of
27. The method of
28. The method of
29. The method according to
30. The article of
31. The method according to
32. The method according to
33. The method of
34. The method of
35. The method of
36. The method of
(a) depositing the colloidal solution of zinc-oxide-based nanoparticles on a substrate, to form a thin film of zinc-oxide-based semiconductor material, such that the semiconductor material exhibits a field effect electron mobility that is greater than 0.01 cm2/Vs; (b) forming a spaced apart source electrode and drain electrode, wherein the source electrode and the drain electrode are separated by, and electrically connected with, the thin film of zinc-oxide-based semiconductor material; and (c) forming a gate electrode spaced apart from the semiconductor material. 37. The process of
(a) providing the substrate; (b) providing the gate electrode material over the substrate; (c) providing a dielectric over the gate electrode material; (d) depositing the thin film of the zinc-oxide-based semiconductor material over the gate dielectric; and (e) providing the source electrode and the drain electrode contiguous to the thin film of zinc-oxide-based semiconductor material. 38. An electronic device comprising a multiplicity of thin film transistors made according to
39. The electronic device of
40. The electronic device of
41. An optoelectronic display device comprising at least one display element coupled to a switch comprising an enhancement-mode, field effect transistor made according to
42. The optoelectronic display device of
43. The electronic device of
Description The present invention relates to the use of zinc-oxide-based semiconductor materials in semiconductor films for thin film transistors. Such thin film transistors can be used in electronic devices, particularly in displays in which solution processable semiconductor materials, and low temperature processes of making the same, are advantageous. Thin film transistors (TFTs) are widely used as switching elements in electronics, for example, in active-matrix liquid-crystal displays, smart cards, and a variety of other electronic devices and components thereof. The thin film transistor (TFT) is an example of a field effect transistor (FET). The best-known example of an FET is the MOSFET (Metal-Oxide-Semiconductor-FET), today's conventional switching element for high-speed applications. For applications in which a transistor needs to be applied to a substrate, a thin film transistor is typically used. A critical step in fabricating the thin film transistor involves the deposition of a semiconductor onto the substrate. Presently, most thin film devices are made using vacuum deposited amorphous silicon as the semiconductor. Amorphous silicon as a semiconductor for use in TFTs still has its drawbacks. The deposition of amorphous silicon, during the manufacture of transistors, requires relatively difficult or complicated processes such as plasma enhanced chemical vapor deposition and high temperatures (about 360¯ C.) to achieve the electrical characteristics sufficient for display applications. Such high processing temperatures disallow deposition on substrates made of certain plastics that might otherwise be desirable for use in applications such as flexible displays. Furthermore, vacuum deposition of semiconductors typically continuously cover a substrate, requiring subsequent subtractive patterning steps. These patterning steps are time consuming and waste materials. There is a growing interest in depositing thin film semiconductors on plastic or flexible substrates, particularly because these supports would be more mechanically robust, lighter weight, and potentially lead to cheaper manufacturing by allowing roll-to-roll processing. A useful example of a flexible substrate is polyethylene terephthalate. Such plastics, however, limit device processing to below 200¯ C. In the past decade, various materials have received attention as a potential alternative to amorphous silicon for use in semiconductor channels of thin film transistors. Semiconductor materials are desirable that are simpler to process, especially those that are soluble in organic or aqueous solvents and, therefore, capable of being applied to large areas by relatively simple processes, such as spin coating, dip coating, microcontact printing, or ink jet application. Semiconductor materials that can be deposited at lower temperatures would open up a wider range of substrate materials, including plastics, for flexible electronic devices. Furthermore, additive solution processes have the opportunity to reduce materials cost by only applying semiconductor materials where they are needed. Thus, thin film transistors made of coatable semiconductor materials can be viewed as a potential key technology for circuitry in various electronic devices or components such as display backplanes, portable computers, pagers, memory elements in transaction cards, and identification tags, where ease of fabrication, mechanical flexibility, and/or moderate operating temperatures are important considerations. This, in turn, has fueled an interest in discovering new semiconductor materials. Organic semiconductors comprise one broad class of low-temperature alternative semiconductor materials that have been the subject of considerable research efforts. However, most organic semiconductors generally have inferior or problematic electronic properties compared to amorphous silicon for use in transistor devices. For example, organic materials may tend to degrade in normal atmospheric conditions. In contrast, inorganic semiconductors tend to be more stable. Consequently, an inorganic semiconductor that is compatible with temperature-sensitive substrates and that has electronic properties equivalent to amorphous silicon would enable electronics for a variety of flexible substrates. The discovery of new inorganic semiconductors has also been the subject of considerable research efforts. For example, metal oxide semiconductors are known that constitute zinc oxide, indium oxide, tin oxide, or cadmium oxide deposited with or without additional doping elements including transition metals such as aluminum. Such semiconductor materials, which are transparent, can have an additional advantage for certain applications, as discussed below. Various processes for making zinc oxide films have been disclosed, both high temperature and low temperature processes, including radio-frequency magnetron sputtering or modified reactive planar magnetron sputtering. Ohya et al (Japanese Journal of Applied Physics, Part 1, January 2001, vol. 40, no. 1, pages 297-8 disclose a thin film transistor of ZnO fabricated by chemical solution deposition. Transparent conducting oxides are reviewed in the August 2000 issue of the Materials Research Bulletin, Volume 25 (8) 2000, devoted to materials and properties of transparent conducting oxide compounds. One low temperature process for deposition of such oxide semiconductors is disclosed in US 2004/0127038 A1 to Carcia et al. This patent discloses a semiconductor deposition process that uses magnetron sputtering of a metal oxide (ZnO, In2O3, SnO2, CdO) or metal (Zn, In, Sn, Cd) target in an atmosphere with a controlled partial pressure of oxygen in an inert gas. This is a low temperature process that is compatible with temperature sensitive substrates and components, for example, drive circuits for displays on flexible, polymer substrates. The field effect transistors of Carcia et al. are based on a nominally undoped metal oxide semiconductor that must be deposited using physical vapor deposition or chemical vapor deposition, preferably rf (radio frequency) magnetron sputtering. Japanese Kokai JP2004349583 A1 discloses a method of producing a thin film transistor in which a dispersion of zinc-oxide nanoparticles is ink-jetted to form the semiconducting channel. No actual examples, however, are described relating to the preparation of the dispersion. US 2004/0127038 discloses a method to produce high quality zinc-oxide thin film transistors using sputtering as a vacuum deposition method. Steven K. Volkman et al., A novel transparent air-stable printable n-type semiconductor technology using ZnO nanoparticles, 2004 IEEE International Electron Device meeting Technical Digest, pp. 769, 2004, discloses a method for producing thin film transistors using organically stabilized zinc-oxide nanoparticles. The disclosed process involves an exposure to a temperature of 400¯ C. or plasma hydrogenation. Transparent oxide semiconductors are especially useful in the fabrication of transparent thin film transistors. Such transparent transistors can be used to control pixels in a display. By being transparent, the active area of the transistor can be significantly increased. For example, thin film transistors are employed in active-matrix liquid crystal displays (AMLCD), which are extensively used in laptop computers and other information display products. The operation of an AMLCD display requires that each picture or display element (pixel) have a corresponding thin film transistor associated with it for selecting or addressing the pixel to be on or off (pixel driver). Presently, AMLCD displays employ transistor materials that may be deposited onto glass substrates but are not transparent (typically amorphous, polycrystalline, or continuous-grain silicon deposited on glass). The portion of the display glass occupied by the addressing electronics is not available for transmission of light through the display. Transparent transistors for AMLCD addressing would allow greater light transmission through the display, thereby improving display performance. Semiconductor materials for use in thin film transistors in various electronic devices may require significant mobilities, well above 0.01 cm2/Vs, and current on/off ratios (hereinafter referred to as on/off ratios) greater than 1000. Semiconductor materials include p-type or p-channel semiconductors, meaning that negative gate voltages, relative to the source voltage, are applied to induce positive charges (holes) in the channel region of the device. An alternative to p-type semiconductor materials are n-type or n-channel semiconductor materials, which terminology indicates that positive gate voltages, relative to the source voltage, are applied to induce negative charges in the channel region of the device. Thus, in an n-type TFT, the device can be turned on, by applying a more positive voltage. This invention relates to a method for preparing a zinc-oxide-based semiconductor film employing zinc-oxide-based nanoparticles. A leading use of the semiconductor films of the present invention is for thin film transistors. In a preferred embodiment, the zinc-oxide-based semiconductor materials are n-type, although, through the use of suitable dopants, p-type materials are also envisioned. The zinc-oxide-based semiconductor material can contain other metals capable of forming semiconducting oxides such as indium, tin, or cadmium, and combinations thereof. Minor amounts of acceptor dopants can also be included. The method of making a semiconductor thin film comprising a zinc-oxide-based semiconductor comprises depositing a colloidal solution of zinc-oxide-containing nanoparticles on a substrate, at a substrate temperature of 300¯ C. or less, wherein the nanoparticles are the reaction product of reactants comprising an organozinc precursor compound and a basic ionic compound that form a zinc-oxide-containing material, wherein the nanoparticles have an average primary particle size in the range of 10 to 150 nm and are colloidally stabilized in the colloidal solution, and wherein the level of inorganic ions in the colloidal solution is below 1 mM and the level of organic compounds, or salts thereof, is below 5 mM. One embodiment of the invention is directed to a process for fabricating a thin film transistor, in which the nanoparticles are applied at about room temperature followed by an annealing step carried out, typically, for one hour or less at a substrate temperature of 300¯ C. or less. Laser annealing may also be employed to allow the semiconductor to reach higher temperatures while maintaining relatively low substrate temperatures. The invention is also directed to a transistor comprising a zinc-oxide-based semiconductor, preferably on a flexible substrate, made by the present process. Semiconductor films made by the present method are capable of exhibiting, in the film form, excellent field-effect electron mobility of greater than 0.01 cm2/Vs and on-off ratios of greater than 104, in which performance properties are sufficient for use in a variety of relevant technologies, including active matrix display backplanes. A TFT structure includes, in addition to the zinc-oxide-based semiconductor, conducting electrodes, commonly referred to as a source and a drain, for injecting a current into the zinc-oxide-based semiconductor. One embodiment of the present invention is directed to the use of such n-channel semiconductor films in thin film transistors each comprising spaced apart first and second contact means connected to an n-channel semiconductor film. A third contact means can be spaced from said semiconductor film by an insulator, and adapted for controlling, by means of a voltage applied to the third contact means, a current between the first and second contact means through said film. The first, second, and third contact means can correspond to a drain, source, and gate electrode in a field effect transistor. The above and other objects, features, and advantages of the present invention will become more apparent when taken in conjunction with the following description and drawings wherein identical reference numerals have been used, where possible, to designate identical or analogous features that are common to the figures, and wherein: The semiconductor films made according to the present method exhibit a field effect electron mobility that is greater than 0.01 cm2/Vs, preferably at least 0.1 cm2/Vs, more preferably greater than 0.2 cm2/Vs. In addition, n-channel semiconductor films made according to the present invention are capable of providing on/off ratios of at least 104, advantageously at least 105. The on/off ratio is measured as the maximum/minimum of the drain current as the gate voltage is swept from one value to another that are representative of relevant voltages which might be used on the gate line of a display. A typical set of values would be −10V to 40V with the drain voltage maintained at 30V. The thin film semiconductors made by the present method have the advantage of maintaining these performance properties even when the materials used in the manufacture of the thin film semiconductors, or the thin film semiconductors themselves, are exposed to air. One embodiment of the present method of making a thin film of a zinc-oxide-based semiconductor comprises depositing a colloidal solution of zinc-oxide-containing nanoparticles on a substrate, at a substrate temperature of 300¯ C. or less, wherein the nanoparticles are the reaction product of reactants comprising an organozinc precursor compound and a basic ionic compound that form a zinc-oxide-containing material, wherein the nanoparticles have an average primary particle size in the range of 10 to 150 nm, preferably 20 to 100 nm, and are colloidally stabilized in the colloidal solution, and wherein the level of inorganic ions in the colloidal solution is below 1 mM and the level of organic compounds, or salts thereof, is below 5 mM. Preferably, the colloidal solution of nanoparticles is applied to the substrate at a level of 0.02 to 1 g/m2 of nanoparticles, by dry-weight. The colloidal solution of nanoparticles can be applied by various methods, including conventional coating techniques for liquids. In one embodiment, the colloidal solution of nanoparticles is applied using an inkjet printer. The inkjet printer can be a continuous or drop-on-demand inkjet printer. In a conventional inkjet printer, the method of inkjet printing a semiconductor film on a substrate element typically comprises: (a) providing an inkjet printer that is responsive to digital data signals; (b) loading a first printhead with the colloidal solution of nanoparticles; (c) printing on the substrate using the colloidal solution in response to the digital data signals; and (d) annealing the printed substrate. Other coating techniques include spin coating, extrusion coating, hopper coating, dip coating, or spray coating. In a commercial scale process, the semiconductor film can be coated on a web substrate that is later divided into individual semiconductor films. Alternately, an array of semiconductor films can be coated on a moving web. For example, a layer of zinc-oxide-based nanoparticles may be applied by spin coating and subsequently annealed for about 10 seconds to 10 minute, preferably 1 minute to about 5 minutes in certain instances, at a temperature of about 50 to 500¯ C., preferably about 130 C to about 300¯ C., suitably in an ambient environment. A semiconductor material, for use in an atmospheric process, must display several characteristics. In typical applications of a thin film transistor, the desire is for a switch that can control the flow of current through the device. As such, it is desired that when the switch is turned on a high current can flow through the device. The extent of current flow is related to the semiconductor charge carrier mobility. When the device is turned off, it is desired that the current flow be very small. This is related to the charge carrier concentration. Furthermore, it is desired that the device be weakly or not at all influenced by visible light. In order for this to be true, the semiconductor band gap must be sufficiently large (>3 eV) so that exposure to visible light does not cause an inter-band transition. A material that is capable of yielding a high mobility, low carrier concentration, and high band gap is ZnO. Furthermore, in a real high volume web based atmospheric manufacturing scheme, it is highly desirable that the chemistries used in the process be both cheap and of low toxicity, which can be satisfied by the use of ZnO and the majority of its precursors. As indicated above, the present method of making the zinc-oxide-based semiconductor thin film, for use in thin film transistors, employs nanoparticles of a zinc-oxide-based material. The zinc-oxide-based semiconductor material can contain minor amounts of other metals capable of forming semiconducting oxides such as indium, tin, or cadmium, and combinations thereof. For example, Chiang, H. Q. et al., High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer, Applied Physics Letters 86, 013503 (2005) discloses zinc tin oxide materials. Also, minor amounts of optional acceptor or donor dopants, preferably less than 10 weight percent, can also be included in the nanoparticles before or after deposition. Accordingly, the term zinc-oxide-based refers to a composition comprising mostly zinc oxide, preferably at least 80 percent, but allowing additives or mixtures with minor amounts of other metal oxides, which semiconductor compositions are known to the skilled artisan. Although undoped zinc-oxide-based nanoparticles can be employed in the present invention, the resistivity of the ZnO may be enhanced by substitutional doping with an acceptor dopant such as, for example, N, B, Cu, Li, Na, K, Rb, P, As, and mixtures thereof. Alternatively, p-type zinc-oxide films can be achieved, by the use of various p-type dopants and doping techniques. For example, U.S. Pat. No. 6,610,141 B2 to White et al. discloses zinc-oxide films containing a p-type dopant, for use in LEDs (light emitting devices), LDs (laser diodes), photodetectors, solar cells or other electrical devices where both n-type and p-type materials may be required for one or more multiple p-n junctions. White et al. employ diffusion of arsenic from a GaAs substrate to produce an arsenic-doped zinc-oxide-based film. U.S. Pat. No. 6,727,522 B1 also describes various dopants for p-type zinc-oxide-based semiconductor films, in addition to n-type dopants. Electrical devices in which zinc oxide is used as the n-type semiconductor and a different metal oxide, such as copper oxide or sodium cobalt oxide, is used as a p-type metal oxide are also known, as for example, described in EP 1324398 A2. Thus, the present invention can be used to make one or more semiconductor thin films in the same electrical device having a p-n junction, either by variously doped zinc-oxide-based semiconductor thin films made by the present method or by a zinc-oxide-based semiconductor thin film in combination with one or more other metal-oxide semiconductor thin films known in the art. For example, an electrical device made according to the present invention can include a p-n junction formed using a zinc-oxide-based thin film semiconductor made by the present method in combination with a thin film semiconductor of complementary carrier type as known in the art. The thickness of the channel layer may vary, and according to particular examples it can range from about 5 nm to about 100 nm. The length and width of the channel is determined by the pixel size and the design rules of the system under construction. Typically, the channel width may vary from 10 to 1000 μm The channel length may vary, and according to particular examples it can range from about 1 to about 100 am. The entire process of making the thin film transistor or electronic device of the present invention, or at least the production of the thin film semiconductor, can be carried out below a maximum support temperature of about 500¯ C., more preferably below 250¯ C., most preferably below about 150¯ C., and even more preferably below about 100¯ C., or even at temperatures around room temperature (about 25¯ C. to 70¯ C.). The temperature selection generally depends on the support and processing parameters known in the art, once one is armed with the knowledge of the present invention contained herein. These temperatures are well below traditional integrated circuit and semiconductor processing temperatures, which enables the use of any of a variety of relatively inexpensive supports, such as flexible polymeric supports. Thus, the invention enables production of relatively inexpensive circuits containing thin film transistors with significantly improved performance. One embodiment of the present invention is directed to a process for fabricating a thin film transistor, preferably by solution-phase deposition of the semiconductor thin film onto a substrate, preferably wherein the substrate temperature is at a temperature of no more than 300¯ C. during the deposition. In such an embodiment, the nanoparticles are applied at room temperature followed by an annealing step carried out, typically, for one hour or less at a substrate temperature of 300¯ C. or less. Laser annealing may also be employed to allow the semiconductor to reach higher temperatures while maintaining relatively low substrate temperatures. The nanoparticles used in the present invention are formed as a colloidal sol for application to the substrate. Nanoparticles having an average primary particles size of 5 to 200 nm, more preferably from 10 to 150 nm, preferably 20 to 100 nm, are colloidally stabilized in the coating solution, by charge, in the absence of surfactant. Charge stabilized sols are stabilized by repulsion between particles based on like surface charges. See, for example, C. Jeffrey Brinker and George W. Scherer, The Physics and Chemistry of Sol-Gel Processing, Academic Press (New York 1989). Zinc-oxide-based nanoparticles can be formed from the reaction of an organometallic precursor such as zinc acetate that is hydrolyzed with a base such as potassium hydroxide. Other organometallic precursor compounds can include, for example, zinc acetylacetonate, zinc formate, zinc hydroxide, zinc chloride, zinc nitrate, their hydrates, and the like. Preferably, the organometallic precursor compound is a zinc salt of a carboxylic acid, or a hydrate thereof, more preferably zinc acetate or a hydrate thereof. Optional doping materials can include, for example, aluminum nitrate, aluminum acetate, aluminum chloride, aluminum sulfate, aluminum formate, gallium nitrate, gallium acetate, gallium chloride, gallium formate, indium nitrate, indium acetate, indium chloride, indium sulfate, indium formate, boron nitrate, boron acetate, boron chloride, boron sulfate, boron formate, and their hydrates. After particle formation, the level of ions is reduced, by washing, to obtain a stable dispersion. Too many ions in solution can cause a screening of the particles from each other so that the particles approach too closely leading to aggregation and thus poor dispersion. Preferably, repeated washings allow the inorganic ion level to reach the desired concentration of below 1 mM. The level of organic compounds, or salts thereof, is maintained below a level of 5 mM. In one embodiment of the invention, the zinc-oxide-based semiconductor thin film comprises supplemental material formed from an overcoat solution. In particular, the semiconductor properties of the thin film can be enhanced by further steps, after applying, to a substrate, the colloidal solution of zinc-oxide-based nanoparticles, drying the coating to form a porous layer of zinc-oxide-based nanoparticles, and annealing the porous layer of zinc-oxide-based nanoparticles. The optional further steps comprise applying, over the porous layer of nanoparticles, an overcoat solution comprising a soluble zinc-oxide-precursor compound that converts to zinc oxide upon annealing, to form an intermediate composite film; drying the intermediate composite film; and annealing the dried intermediate composite film at a temperature of at least 50¯ C., suitably up to 500¯ C., to produce a semiconductor film comprising zinc-oxide-based nanoparticles supplemented by additional zinc oxide material formed by the conversion of the zinc-oxide-precursor compound during the annealing of the composite film. Preferably, in this embodiment the colloidal solution of nanoparticles is applied to the substrate at a level of 0.02 to 1 g/m2 of nanoparticles, by dry-weight. The overcoat solution is preferably applied at a level of 2æ104 to 0.01 moles/m2 of precursor compound. In a preferred embodiment, the molar ratio of nanoparticles to theoretically converted zinc-oxide precursor compound is approximately 0.02 to 60, based on moles of ZnO and precursor compound present. Another aspect of the invention relates to the process for the production of semiconductor components and electronic devices incorporating such components. In one embodiment, a substrate is provided and a layer of the semiconductor material as described above can be applied to the substrate, electrical contacts being made to the layer. The exact process sequence is determined by the structure of the desired semiconductor component. Thus, in the production of a field effect transistor, for example, a gate electrode can be first deposited on a flexible substrate, for example a vacuum or solution deposited metal or organic conductor. The gate electrode can then be insulated with a dielectric and then source and drain electrodes and a layer of the n-channel semiconductor material can be applied on top. The structure of such a transistor and hence the sequence of its production can be varied in the customary manner known to a person skilled in the art. Thus, alternatively, a gate electrode can be deposited first, followed by a gate dielectric, then the semiconductor can be applied, and finally the contacts for the source electrode and drain electrode deposited on the semiconductor layer. A third structure could have the source and drain electrodes deposited first, then the semiconductor, with dielectric and gate electrode deposited on top. The skilled artisan will recognize other structures can be constructed and/or intermediate surface modifying layers can be interposed between the above-described components of the thin film transistor. In most embodiments, a field effect transistor comprises an insulating layer, a gate electrode, a semiconductor layer comprising a ZnO material as described herein, a source electrode, and a drain electrode, wherein the insulating layer, the gate electrode, the semiconductor layer, the source electrode, and the drain electrode are in any sequence as long as the gate electrode and the semiconductor layer contact opposite sides of the insulating layer, and the source electrode and the drain electrode both contact the semiconductor layer. A thin film transistor (TFT) is an active device, which is the building block for electronic circuits that switch and amplify electronic signals. Attractive TFT device characteristics include a low voltage to turn it on, a high transconductance or (device current)/(gate) control-voltage ratio, and a high on (Vg>0) current to off (Vg≦0) current ratio. In one embodiment of a typical TFT structure made according to the present invention, the substrate is a polymer, such as PET, PEN, KAPTON or the like. Source and drain conducting electrodes can be patterned on the substrate. The zinc-oxide-based semiconductor is then coated, followed by a gate-insulating layer such as SiO2 or Al2O3 or a solution coated polymer. Finally, a gate-conducting electrode is deposited on the gate-insulating layer. One of skill in the art will recognize that this is one of many possible TFT fabrication schemes. In the operation of such a TFT device, a voltage applied between the source and drain electrodes establishes a substantial current flow only when the control gate electrode is energized. That is, the flow of current between the source and drain electrodes is modulated or controlled by the bias voltage applied to the gate electrode. The relationship between material and device parameters of the zinc-oxide-based semiconductor TFT can be expressed by the approximate equation (see Sze in Semiconductor DevicesPhysics and Technology, John Wiley & Sons (1981)):
The TFT structure described herein includes a transparent zinc-oxide-based semiconductor with conducting electrodes, commonly referred to as a source and a drain, for injecting a current into the zinc-oxide-based semiconductor and a capacitance charge injection scheme for controlling and/or modulating the source-drain current. One particularly attractive application of zinc-oxide-based semiconductor TFT's is in the drive circuits for displays on flexible, polymer substrates. Zinc oxide semiconductor transistors and/or transistor arrays are useful in applications including, but not limited to, flat panel displays, active matrix imagers, sensors, rf price labels, electronic paper systems, rf identification tags and rf inventory tags. For ease of understanding, the following terms used herein are described below in more detail: Enhancement-mode transistor means a transistor in which there is negligible off-current flow, relative to on-current flow, between a source and a drain at zero gate voltage. In other words, the transistor device is normally off. In contrast, a depletion-mode transistor is normally on meaning that more than a substantially negligible current flows between a source and a drain at zero gate voltage. Enhancement is typically preferred. Gate generally refers to the insulated gate terminal of a three terminal FET when used in the context of a transistor circuit configuration. Substantially transparent generally denotes a material or construct that does not absorb a substantial amount of light in the visible portion (and/or infrared portion in certain variants) of the electromagnetic spectrum. As used herein, a or an or the are used interchangeably with at least one, to mean one or more of the element being modified. As used herein, the terms over, above, and under and the like, with respect to layers in the thin film transistor, refer to the order of the layers, wherein the thin film semiconductor layer is above the gate electrode, but do not necessarily indicate that the layers are immediately adjacent or that there are no intermediate layers. In the descriptions of FIGS. 1 to 4, the descriptors top and bottom refer to the disposition of the contact with respect to the semiconductor, with bottom representing closer to the substrate and top representing further from the substrate. These structures will be described further. Vertical means substantially perpendicular to the surface of a substrate. The preceding term descriptions are provided solely to aid the reader, and should not be construed to have a scope less than that understood by a person of ordinary skill in the art or as limiting the scope of the appended claims. Disclosed herein are enhancement-mode, field effect transistors wherein at least a portion of the transistor structure may be substantially transparent. Devices that include the transistors and methods for making the transistors are also disclosed. Zinc-oxide materials can be made into substantially transparent films. Accordingly, an optional characteristic of a transistor structure according to the present invention is that selected embodiments of the construct, or a subset thereof that include the semiconductor channel layer and the gate insulator layer, may exhibit an optical transmission of at least about 90%, more particularly at least about 95%, across the visible portion (and/or infrared portion in certain variants) of the electromagnetic spectrum. Each of the additional components of the structure (i.e., substrate, gate electrode, source/drain terminals) may be optionally opaque or substantially transparent depending upon the desired end use of the transistor. In certain embodiments, the transistor structure as a whole (and/or individual components of the transistor) may exhibit an optical transmission of at least about 50%, more particularly at least about 70%, and most particularly at least about 90%, across the visible portion (and/or infrared portion in certain variants) of the electromagnetic spectrum. Because of the optional transparency, transistors made according to the present invention may be advantageously included in optoelectronic display devices as switches coupled to at least one display element, as described in greater detail below. A further feature of the FET disclosed herein is that it may easily be fabricated as a thin film transistor (TFT) at relatively low processing temperatures (e.g., preferably not exceeding about 300¯ C.). Cross-sectional views of typical solution deposited thin film transistor are shown in FIGS. 1 to 4. For example, Each thin film transistor (TFT) in the embodiments of The off current is defined as the current flowing between the source electrode 20 and the drain electrode 30 when charge has not been intentionally injected into the channel by the application of a gate voltage. This occurs for a gate-source voltage more negative, assuming an n-channel, than a certain voltage known as the threshold voltage. See Sze in Semiconductor DevicesPhysics and Technology, John Wiley & Sons (1981), pages 438-443. The on current is defined as the current flowing between the source electrode 20 and the drain electrode 30 when charge carriers have been accumulated intentionally in the channel by application of an appropriate voltage to the gate electrode 44, and the channel is conducting. For an n-channel accumulation-mode TFT, this occurs at gate-source voltage more positive than the threshold voltage. It is desirable for this threshold voltage to be zero, or slightly positive, for n-channel operation. Switching between on and off is accomplished by the application and removal of an electric field from the gate electrode 44 across the gate dielectric 56 to the semiconductor-dielectric interface, effectively charging a capacitor. The specific examples of transistor configurations described herein are for illustrative purposes and should not be considered as limiting the scope of the appended claims. For example, a further (third) specific transistor structure is shown in The TFT structure of Subsequently, the gate dielectric 56 may then be deposited and patterned over the semiconductor film 70. For example, a 2000-Angstrom Al2O3 film may be sputter deposited, and then patterned via shadow masking or photolithography. Vias (not shown) may be formed through the gate dielectric 56 to electrically connect to the source electrode 20 and the drain electrode 30. The Al2O3 film could optionally be annealed. The gate electrode 44 may then be deposited and patterned over the gate dielectric 56. For example, a 2000 Angstrom ITO film may be sputter deposited, and then patterned via shadow masking or photolithography. The ITO film could optionally be annealed. Yet a fourth variation of a TFT structure is shown in The TFT structure of Alternatively, the contacts in the above configuration of Having illustrated and described the principles of the disclosed TFT transistor devices and methods with reference to several embodiments, it should be apparent that these TFT devices and methods may be modified in arrangement and detail without departing from such principles. A support can be used for supporting the TFT during manufacturing, testing, and/or use. The skilled artisan will appreciate that a support selected for commercial embodiments may be different from one selected for testing or screening various embodiments. In some embodiments, the support does not provide any necessary electrical function for the TFT. This type of support is termed a non-participating support in this document. Useful materials can include organic or inorganic materials. For example, the support may comprise inorganic glasses, ceramic foils, polymeric materials, filled polymeric materials, coated metallic foils, acrylics, epoxies, polyamides, polycarbonates, polyimides, polyketones, poly(oxy-1,4-phenyleneoxy-1,4-phenylenecarbonyl-1,4-phenylene) (sometimes referred to as poly(ether ether ketone) or PEEK), polynorbornenes, polyphenyleneoxides, poly(ethylene naphthalenedicarboxylate) (PEN), poly(ethylene terephthalate) (PET), poly(ether sulfone) (PES), poly(phenylene sulfide) (PPS), and fiber-reinforced plastics (FRP). Flexible substrates can also be thin metal foils such as stainless steel provided they are coated with an insulating layer to electrically isolate the thin film transistor. A flexible support is used in some embodiments of the present invention. This allows for roll processing, which may be continuous, providing economy of scale and economy of manufacturing over flat and/or rigid supports. The flexible support chosen preferably is capable of wrapping around the circumference of a cylinder of less than about 50 cm diameter, more preferably 25 cm diameter, most preferably 10 cm diameter, without distorting or breaking, using low force as by unaided hands. The preferred flexible support may be rolled upon itself. If flexibility is not a concern, then the substrate may be a wafer or sheet made of materials including glass and silicon. The thickness of the substrate may vary, and according to particular examples it can range from about 100 μm to about 1 cm. In some embodiments of the invention, the support is optional. For example, in a top construction as in The gate electrode can be any useful conductive material. A variety of gate materials known in the art, are also suitable, including metals, degenerately doped semiconductors, conducting polymers, and printable materials such as carbon ink, silver-epoxy, or sinterable metal nanoparticle suspensions. For example, the gate electrode may comprise doped silicon, or a metal, such as aluminum, chromium, gold, silver, nickel, copper, tungsten, palladium, platinum, tantalum, and titanium. Gate electrode materials can also include transparent conductors such as indium-tin oxide (ITO), ZnO, SnO2, or In2O3. Conductive polymers also can be used, for example polyaniline, poly(3,4-ethylenedioxythiophene)/poly(styrene sulfonate) (PEDOT:PSS). In addition, alloys, combinations, and multilayers of these materials may be useful. The thickness of the gate electrode may vary, and according to particular examples it can range from about 50 to about 1000 nm. The gate electrode may be introduced into the structure by chemical vapor deposition, sputtering, evaporation and/or doping, or solution processing. In some embodiments of the invention, the same material can provide the gate electrode function and also provide the support function of the support. For example, doped silicon can function as the gate electrode and support the TFT. The gate dielectric is provided in contact with the gate electrode. This gate dielectric electrically insulates the gate electrode from the balance of the TFT device. Thus, the gate dielectric comprises an electrically insulating material. The gate dielectric should have a suitable dielectric constant that can vary widely depending on the particular device and circumstance of use. For example, a dielectric constant from about 2 to 100 or even higher is known for a gate dielectric. Useful materials for the gate dielectric may comprise, for example, an inorganic electrically insulating material. The gate dielectric may comprise a polymeric material, such as polyvinylidenedifluoride (PVDF), cyanocelluloses, polyimides, etc. The gate electric may comprise a plurality of layers of different materials having different dielectric constants. Specific examples of materials useful for the gate dielectric include strontiates, tantalates, titanates, zirconates, aluminum oxides, silicon oxides, tantalum oxides, titanium oxides, silicon nitrides, barium titanate, barium strontium titanate, barium zirconate titanate, zinc selenide, and zinc sulfide. In addition, alloys, combinations, and multilayers of these examples can be used for the gate dielectric. Of these materials, aluminum oxides, silicon oxides, and zinc selenide are preferred. In addition, polymeric materials such as polyimides, polyvinyl alcohol, poly(4-vinylphenol), polyimide, and poly(vinylidene fluoride), polystyrene and substituted derivatives thereof, poly(vinyl naphthalene) and substituted derivatives, and poly(methyl methacrylate) and other insulators having a suitable dielectric constant. The gate dielectric can be provided in the TFT as a separate layer, or formed on the gate such as by oxidizing the gate material to form the gate dielectric. The dielectric layer may comprise two or more layers having different dielectric constants. Such insulators are discussed in U.S. Pat. No. 5,981,970 hereby incorporated by reference and copending U.S. application Ser. No. 11/088,645, hereby incorporated by reference. Gate insulator materials typically exhibit a band-gap of greater than about 5 eV. The thickness of the gate insulator layer may vary, and according to particular examples it can range from about 10 to about 300 nm. The gate dielectric layer may be introduced into the structure by techniques such as chemical vapor deposition, sputtering, atomic layer deposition, or evaporation, solution. Source/drain terminals refer to the terminals of a TFT, between which conduction occurs under the influence of an electric field. Designers often designate a particular source/drain terminal to be a source or a drain on the basis of the voltage to be applied to that terminal when the TFT is operated in a circuit. The source electrode and drain electrode are separated from the gate electrode by at least the gate dielectric, while the zinc-oxide-based semiconductor layer can be over or under the source electrode and drain electrode. The source and drain electrodes can be any useful conductive material. Useful materials include most of those materials described above for the gate electrode, for example, aluminum, barium, calcium, chromium, gold, silver, nickel, palladium, platinum, titanium, copper, tungsten, polyaniline, PEDOT:PSS, other conducting polymers, alloys thereof, combinations thereof, and multilayers thereof. Other illustrative materials include transparent, n-type conductors such as indium-tin oxide (ITO), ZnO, SnO2, or In2O3. Preferred electrodes are silver, gold, PEDOT:PSS, or aluminum. The source electrode and drain electrode can be provided by any useful means such as chemical or physical vapor deposition (e.g., thermal evaporation, sputtering), evaporation, ink jet printing, or doping of the semiconductor channel layer material via diffusion or ion implantation and solution deposition. The patterning of these electrodes can be accomplished by known methods such as shadow masking, additive photolithography, subtractive photolithography, printing, microcontact printing, and pattern coating. The source and drain terminals may be fabricated such that they are geometrically symmetrical or non-symmetrical. Electrical contact to the gate electrode, source, drain and substrate may be provided in any manner. For example, metal lines, traces, wires, interconnects, conductors, signal paths and signaling mediums may be used for providing the desired electrical connections. The related terms listed above, are generally interchangeable, and appear in order from specific to general. Metal lines, generally aluminum (Al), copper (Cu) or an alloy of Al and Cu, are typical conductors that provide signal paths for coupling or interconnecting, electrical circuitry. Conductors other than metal may also be utilized. In cases where another layer covers the electrical contact of interest, connection to the electrical contact can be made by creating a via that penetrates to the contact. Such vias can be made by convenient patterning operations such as lithography, etching, or laser based processes. An illustrative n-channel operation of the transistor involves applying a positive voltage to the gate electrode, grounding the source, and applying a positive voltage to the drain. For example, a voltage of about 5 to about 40 V may be applied to the gate electrode and the drain during operation. The threshold voltage may range from about −minus 10 to about 20 V, although devices can operate with larger ranges. Electrons flow from the source, along the semiconductor thin film, and out of the transistor through the drain. The effective mobility of the electrons may vary depending upon the specific structure, but typically should be greater than 0.01 cm2V−1s−1 for useful practical applications. Simply by removing the positive voltage applied to the gate electrode turns the transistor off when the transistor is an enhancement-mode transistor. Devices in which the n-channel semiconductor films of the invention are useful include especially thin film transistors (TFTs). Also, such films can be used in various types of devices having p-n junctions, such as described on pages 13 to 15 of US 2004/0021204 A1 to Liu, hereby incorporated by reference. Electronic devices in which TFTs and other devices are useful include, for example, more complex circuits, e.g., shift registers, integrated circuits, logic circuits, smart cards, memory devices, radio-frequency identification tags, backplanes for active matrix displays, active-matrix displays (e.g. liquid crystal or OLED), solar cells, ring oscillators, and complementary circuits, such as inverter circuits, for example, in combination with other transistors made using available p-type organic semiconductor materials such as pentacene. In an active matrix display, a transistor according to the present invention can be used as part of voltage hold circuitry of a pixel of the display. In devices containing the TFTs of the present invention, such TFTs are operatively connected by means known in the art. One example of a microelectronic device is an active-matrix liquid-crystal display (AMLCD). One such device is an optoelectronic display that includes elements having electrodes and an electro-optical material disposed between the electrodes. A connection electrode of the transparent transistor may be connected to an electrode of the display element, while the switching element and the display element overlap one another at least partly. An optoelectronic display element is here understood to be a display element whose optical properties change under the influence of an electrical quantity such as current or voltage such as, for example, an element usually referred to as liquid crystal display (LCD). The presently detailed transistor has sufficient current carrying capacity for switching the display element at such a high frequency that the use of the transistor as a switching element in a liquid crystal display is possible. The display element acts in electrical terms as a capacitor that is charged or discharged by the accompanying transistor. The optoelectronic display device may include many display elements each with its own transistor, for example, arranged in a matrix. Certain active matrix pixel designs, especially those supplying a display effect that is current driven, may require several transistors and other electrical components in the pixel circuit. One specific example of a basic AMLCD cell circuit is depicted in Advantages of the invention will be demonstrated by the following examples, which are intended to be exemplary. A. Material Synthesis The ZnO Nanoparticle Layer Formulation NLF-1 was prepared as follows: All reagents were obtained from the Aldrich Chemical Company. To a 40 mL amber glass bottle with screw cap was added 0.015 moles zinc acetate (99.99%) in 20 mL of methanol. With stirring, 270 μL of 18.5 MΩ water was added. The above solution was held, with stirring, at 60 C in a constant temperature water bath for 10 minutes. A solution of 7.68 mL of 2.93M KOH in methanol plus 4.32 mL of methanol was then added drop wise, at a rate of 1 mL/minute, to the above solution at 60 C. Following the completion of the base addition, the solution is kept stirring at 60 C for 20 hours. Following the completion of the reaction, 15 mL of the above solution were extracted and repeatedly washed by centrifugation followed by redispersion in methanol. The final wash consisted of redispersal in a solution of 1 part methanol and 3 parts hexanes, again followed by centrifugation. The final material was then redispersed in ethanol. A typical sample of such a colloidal solution of nanoparticles shows a primary particle size of approximately 80 nm as measured with UPA. The sample may also contain some particle aggregates of low number, leading to and apparent bimodal particle distribution. After washing, typical potassium content is less than a detection limit of less than 5 ppm as measured by inductively coupled plasma testing. B. Device Preparation All TFT's were made employing a gate and dielectric structure in a top contact structure ( C. Device Measurement and Analysis Electrical characterization of the fabricated devices was performed with a Hewlett Packard HP 4156 parameter analyzer. Device testing was done in air in a dark enclosure. The results were averaged from several devices. For each device, the drain current (Id) was measured as a function of source-drain voltage (Vd) for various values of gate voltage (Vg). Furthermore, for each device the drain current was measured as a function of gate voltage for various values of source-drain voltage. For most devices, Vg was swept from minus 10 V to 40 V for each of the drain voltages measured, typically 5 V, 20 V, and 35 V, and 50 V. Mobility measurements were taken from the 35V sweep. Parameters extracted from the data include field-effect mobility (μ), threshold voltage (Vth), subthreshold slope (S), and the ratio of Ion/Ioff for the measured drain current. The field-effect mobility was extracted in the saturation region, where Vd>Vg−Vth. In this region, the drain current is given by the equation (see Sze in Semiconductor DevicesPhysics and Technology, John Wiley & Sons (1981)):
Where, W and L are the channel width and length, respectively, and Cox is the capacitance of the oxide layer, which is a function of oxide thickness and dielectric constant of the material. Given this equation, the saturation field-effect mobility was extracted from a straight-line fit to the linear portion of the √Id versus Vg curve. The threshold voltage, Vth, is the x-intercept of this straight-line fit. The log of the drain current as a function of gate voltage was plotted. Parameters extracted from the log Id plot include the Ion/Ioff ratio. The Ion/Ioff ratio is simply the ratio of the maximum to minimum drain current, and S is the inverse of the slope of the Id curve in the region over which the drain current is increasing (i.e. the device is turning on). This example shows that working TFT devices can be created from a nanoparticle film at low temperatures. The semiconductor coating solution was prepared by diluting the above nanoparticle formulation, NLF-1, to 1.0% in ethanol. The above solution was applied to the substrate by spin coating at a rate of 1000 or 2000 rpm. After the spin coating, the Samples 1-1 through 1-4 were annealed for 10 minutes at a range of temperatures between 50¯ C. and 200¯ C. in dry air. Subsequent sample processing is as described above. Device testing yielded the following parameters:
As can be seen in Table 1-1, optional annealing at moderate temperatures can improve the performance of the semiconductor film. Effective transistor performance can be obtained over a wide range of temperatures, although higher mobilities are obtained at a temperature of 200¯ C. The semiconductor coating solution was prepared by diluting the above nanoparticle formulation, NLF-1, to the range of concentrations for Samples 2-1 through 2-7 as listed in table 2-1 in ethanol. The solution was applied to the substrate by spin coating at a rate of 2000 rpm. After the spin coating, the samples were annealed for 10 minutes at 200¯ C. in dry air. Subsequent sample processing is as described above. Device testing yielded the follow parameters:
As can be seen in Table 2-1, effective transistor performance is obtained over a wide range of concentrations. Variations in the level of nanoparticles, however, can have some effect on device performance. In this particular embodiment, a range of 0.5 to 1.5% solids was found preferable. A series of tests (Examples 3, 4, and 5) showed that device performance is degraded by the presence of excess materials in the nanoparticle formulation. The formulation, as described above in the material synthesis removed a mixture of organic and inorganic impurities by washing. In this example, a purely inorganic salt, potassium hydroxide, was added to the formulation to simulate the effect of ionic compounds on device performance. The coating solution was prepared with the above nanoparticle solution NLF-1 to obtain a final solution containing 1.1% ZnO seeds and potassium hydroxide at the concentrations in Samples 3-1 to 3-4 as listed in Table 3-1 below. The solution was applied to the substrate by spin coating at a rate of 2000 rpm. After the spin coating, the samples were annealed for 10 minutes at 200¯ C. in dry air. Following the above nanoparticle layer deposition process, a second layer consisting of zinc acetate dissolved in methanol at a concentration of 0.175M with 2 molar equivalents of water relative to zinc was spun on to the substrate at 2000 rpm. This layer was then annealed at 200¯ C. for 10 minutes in dry air to convert it to zinc oxide. Subsequent sample processing is as described above. Device testing yielded the follow parameters:
As can be seen in Table 3-1, device performance begins to drop considerably when significant amounts of an inorganic salt are present with the zinc oxide nanoparticles, including the inorganic salt used to make the nanoparticles. This example shows the effect of an organic salt containing an organic moiety, specifically ammonium acetate. The coating solution was prepared by diluting the above nanoparticle formulation NLF-1 to 1.1% with EtOH, and including the ammonium acetate at the concentrations in Samples 4-1 to 4-4 as listed in Table 4-1 below. The solution was applied to the substrate by spin coating at a rate of 2000 rpm. After the spin coating, the samples were annealed for 10 minutes at 200¯ C. in dry air. Following the above-described nanoparticle coating process, a precursor layer consisting of zinc acetate dissolved in methanol at a concentration of 0.175M with 2 molar equivalents of water relative to zinc was spun on to the substrate at 2000 rpm. This layer was then annealed at 200¯ C. for 10 minutes in dry air. Subsequent sample processing is as described above. Device testing yielded the follow parameters:
As can be seen in Table 4-1, device performance begins to drop considerably when significant amounts of an organic salt are present with the zinc oxide nanoparticles, including the organic salt resulting from the preparation of the nanoparticles. This example shows the effect of an organic surfactant, specifically dodecylamine, on performance when present in the nanoparticle formulation. The coating solution was prepared by diluting the above nanoparticle formulation NLF-1 to 1.1% with EtOH, and including dodecylamine at the concentrations in Samples 5-1 to 5-4 as listed in Table 5-1. The solution was applied to the substrate by spin coating at a rate of 2000 rpm. After the spin coating, the samples were annealed for 10 minutes at 200¯ C. in dry air. Following the above seed process, a precursor layer consisting of zinc acetate dissolved in methanol at a concentration of 0.175M with 2 molar equivalents of water relative to zinc was spun on to the substrate at 2000 rpm. This layer was then annealed at 200¯ C. for 10 minutes in dry air. Subsequent sample processing is as described above. Device testing yielded the follow parameters:
As can be seen in Table 4-1, device performance begins to drop considerably when significant amounts of an organic salt are present with the zinc oxide nanoparticles, including the organic compounds that might be used to stabilize or disperse the nanoparticles in solution. This example demonstrates zinc oxide TFTs may be prepared from a wide range of zinc oxide levels employing inkjet printing. Inkjet printing experiments were performed using a system consisting of a sample platen supported by a set of X-Y translation stages, piezoelectric demand-mode printheads supported by a z translation stage, and software to control these components. The printheads of this inkjet system are suited to dispense droplets in the 20-60 picoliter range. Approximately 2 cc of the fluid to be printed is placed in a sample cartridge which is then screwed to the printing fixture. The printhead was primed with ink using pressurized nitrogen. A TencorÛ profilometer was used to measure the printed film thicknesses of a series of calibration samples. The drop volume was calculated as 38 picoliters by using best-fit linear regression in a simple model relating number of drops fired, ink concentration, and printed film thickness. A 30 mm square sample of a silicon wafer was cleaned according to the procedure described above and placed on the printer stage. A 3.31 wt % dispersion of charge stabilized ZnO nanoparticles was diluted with ethanol to 1.3 wt %, and an ink cartridge was filled with the resulting fluid. By overlaying drops at different drop spacing, a set of ZnO nanoparticle films with varying film thickness were obtained. The sample was heated for 10 minutes at 200 C in air. The converted ZnO film thickness was measured using TENCOR profilometer. Aluminum contacts and a polystyrene overcoat were deposited as described above. Film thickness and charge mobility results are summarized in Table 6-1.
The zinc oxide TFTs employing inkjet printing showed effective transistor performance is obtained over a wide range of levels of zinc oxide. Variations in the level of nanoparticle, however, can have some effect on device performance. In this particular embodiment, a range of about 20 to 35 nm was found preferable.
Referenced by
Legal Events
Rotate |


text:
MU to host annual fundraiser for children with speech disorders
April 04, 2014
You can read more about this article here.
Gifts Anyone Can Make
Did you know there are ways to support Marshall University that don't affect your current lifestyle or your family's security? You can support Marshall with gifts that don't impact the way you live.

subset: commoncrawl


text:
Thread: Wooster Twp. Ohio Fatality
01-03-2001, 05:31 PM #1MetalMedicFirehouse.com Guest
Wooster Twp. Ohio Fatality
1/3/01 at around 0230 hrs. the Wooster Twp. Fire Department in Wayne County, Ohio responded to a 2 story house fire at 1427 Barnes Road. Reports are that the house was fully involved upon arrival. An 11 year old boy perished in the fire. News reports are that neighbors attempted to rescue the boy after seeing him standing at a 2nd floor window. However, when they broke the window, the heat and smoke were too severe and they could not gain access to the building.
Wooster Twp. FD is a combination department located in the same county as I am, about 14 miles from me. They are very progressive and are known for their offensive tactics, water movement capabilities and are the first department in the county to have Thermal Imaging Camera.
Richard Nester
Orrville (OH) Fire Dept.
Thread Information
Users Browsing this Thread
There are currently 1 users browsing this thread. (0 members and 1 guests)


text:
Runnveer Singh
Is This You?Runnveer Singh
Tax Preparer Hayward, CA
Be the first to review Runnveer Singh — write a review
Services Provided by Runnveer Singh
Tax Preparation
Reviews of Runnveer Singh
Have you worked with Runnveer Singh?
WRITE A REVIEWRunnveer Singh - Is this your Profile? Register it for free!
- Showcase your experience and expertise
- Connect with thousands of potential new clients on WealthVisor.com
- Improve your visibility on Google and other search engines


text:
when i order my subs one of them was 600 watts rms and where i had two come in it would be 1200 watts rms so when i ordeer my d class sub should i go of a max of 1200 watts or could i go higher
subs are usally rated for there max capacity I wouildnt go anything above that unless you really like that burnt electrical smell in your cab.
The speakers are rated independantly - each can only handle 600 rms - do not add them together. The RMS figure is really meaningless - its an often exagerrated figure. Depending on the brand of sub/speaker I would only get an amp that can deliver no more than 600 watt to each sub continous power. And remember more watts does not always mean louder.
thanks im not sure what subs to get anymore i know the box for my truck the depth cant be no more then 6.5" deep and the magnet cant be no more then 6.25" in diameter i was looking at either the jl audio thin or the mtx thin anyone know if these subs are good or should i go with something else
I would go off the cubic feet of the box per chamber or if it just single. And look what is recommeneded for the sub. Like i know my jl 12 w3 is 1 cub so that is what i have. So if you get a sub with a reccommendation for a box that it is bigger then the cubic of the box then it will not sound good. To make it sound good it is all in the box and 3/4 of the rated rms to the amp.
I'd get the JL audio thin. Its got great power, I heard it at car shop. I have 2 10" W0's and there great. I dont think i'd get anything besides JL.
here is the statistics on the sub im looking at Free Air Resonance (Fs): 27.52 HzElectrical "Q" (Qes): 0.511Mechanical "Q" (Qms): 11.230Total Speaker "Q" (Qts): 0.489Equivalent Compliance (Vas): 2.10 cu. ft. / 59.47 litersOne-Way, Linear Excursion (Xmax)*: 0.383 in. / 9.7 mmReference Efficiency (no): 0.233%Efficiency (1W/1m)**: 85.87 dB SPLEffective Piston Area (Sd): 98.256 sq. in. / 0.0634 sq. m.DC Resistance (Re): 2.793 ohmNominal Impedance (Znom): 3 ohmThermal Power Handling (Pt): 600WDriver Displacement: 0.052 cu. ft. / 1.47 litersNet Weight: 18.6 lbs. / 8.4 kg the the box is .6 cu.ft for each sub and it holds two will this work
here is the diamension of the box for the truck MDF construction (3/4" and 5/8") Air Space: .6 cu.ft. per chamber sealed Mounting Depth: 6.5" Clearance: 1.75" between floor and mounting surface Finish: Your choice of carpet Fits: Two 10s or Two 12s up to 6.5" deep (magnets must be no more than 6.25" in diameter)
i have to 10" mtx subs and there pretty good i just stuffed the boxes with cotton and now they really bang. but i went for the low end power of my subs and they are still loud


text:
- Publisher: Konami
- Release Date: Aug 16, 2011
- Critic Score
- Most active
- Publication
- Most clicked
Jun 15, 2011No More Heroes is still a great game, if a little inconsistent; dozens of inspired moments with the dullest sandbox world yet produced as the hub, sacrificing fun for drudgery, yet somehow getting away with it, a fast-paced action game, coupled with a frame rate volatile when you do anything too fast. This is a deeply flawed game but it is brilliant; overcoming a multitude of shortcomings and refusing to be crippled by its own flab.
Jun 26, 2011If you live and breathe for over the top Japanese craziness then No More Heroes should be at the top of your wish list. [Issue#206, p.90]
May 19, 2011A cult classic, a rare and crazy gem that demands your full attention from start to finish. The conversion from Wii to PS3 hasn't been entirely without fault, but it's still well worth picking up, especially if you never experienced it the first time around.
May 27, 2011This is the best version of No More Heroes available. Uncensored and with high definition graphics, it includes new content and the possiblity to use Move and enjoy the same experience as the original. But it loses the surprise factor, and does not make the most of PlayStation 3 capabilities.
Aug 18, 2011A fantastic game that has a lot to offer. It's got a unique flavor, some fantastic boss fights, excellent combat, slick visuals, and more than a few lines of dialogue that will have you laughing giddily. It also has a bit of an identity crisis that has you brutally killing waves of enemies one minute and cleaning the town of garbage the next, so the flow is a bit off.
Jun 4, 2011Though not radically different from the Wii version, No More Heroes: Heroes' Paradise remains a blood soaked, mayhem filled title that is definitely deserving of a look-in for those who are yet to experience the world of Travis Touchdown.
Jun 2, 2011A great "HD Edition", with some interesting additions regarding boss battles from the second chapter and a functional control scheme.
Jun 1, 2011No More Heroes: Heroes' Paradise is a great porting of the original game published time ago on the Nintendo Wii. The HD lifting is quite good and the addition of 5 bosses from No More Heroes 2 is a nice touch. Anyway, the old problems are still there, not enough to ruin the experience but to enough be somehow disappointing.
May 30, 2011A slightly flawed gem. Any technical or gameplay flaws are made up for with unrelenting violence, dark humor, remarkable characters and a vicious attitude. Definitely worth picking up for players who have missed out on the-series to date. Fans of Suda51 or japanese weirdness will have a field day with this game.
May 18, 2011It's a game about games, and stuffed with the kind of scenarios and salacious tidbits that presuppose a largely male, largely 20-something audience ready to get lost in them...So let's put it this way. If you masturbate with any degree of regularity, you'll probably really enjoy No More Heroes: Heroes' Paradise. And you can quote me on that.
May 17, 2011Highbrow parody or the best lightsabre game never made? Suda51's deconstructionist classic manages to be both.
May 13, 2011This (finally) uncensored version is a remake of the first No More Heroes, now in great looking HD. Suda 51 was the team involved in the development of the first game and we love their style, great sense of humor and exaggerated characters. Move is a great substitute for the Wiimote, and the lack of a Nunchuk is not a big deal for performing combos and wrestling attacks. And this time you can also use the DualShock 3 gamepad. The game is almost identical to the original one and we only have a few additions like the dreams (replay old cinematics) and nightmares (replay old battles). We had hoped for a major improvement in the visuals, but only the light effects are noticeably better. If you are looking for a extremely fun and unique action game for your PS3, don't think too much about this, just pick Heroes Paradise and start hunting assassins.
Jun 6, 2011The only issues with the game is the sometimes repetitive gameplay and odd graphical glitches. Add in an online leaderboard, mini-games and that bloody entertaining beam katana which makes all my Star Wars fantasies come to life and No More Heroes - Heroes Paradise is the perfect game for those looking for something light.
Aug 18, 2011If you don't own a Wii or want to start from the beginning, this HD upgrade of the original No More Heroes is a solid but flawed brawler that will introduce you to the goofy plight of Travis Touchdown. For everyone else, don't hesitate to skip right to the far superior Wii-exclusive sequel. [Sept 2011, p.94]
Jun 2, 2011The many identical henchmen start to grate and the boring and awkward free roaming gets also gets annoying pretty quickly. But, you also get and enormous amount of style, strangeness and violence.
Sep 1, 2011If you never got around to playing the original on the Wii, or are just looking for an interesting, although flawed, game from the strange mind of Suda51, you can't go wrong with Heroes' Paradise.
Aug 16, 2011Everyone needs to play this game, despite its imperfections, because its uniqueness deserves your attention. Pick up this crazy, super stylistic, ultraviolent adventure. It shines, despite its technical shortcomings. Go decapitate some f---heads.
Jun 17, 2011No More Heroes: Heroes' Paradise alternates between a unique art direction, full of great moments, to some technical flaws that are hard to swallow, especially considering that the game runs on a PlayStation 3. The very simple structure, which uses various tricks to break an otherwise absurd monotony (ten boss fights in a row?) should have been supported by a deeper gameplay and, furthermore, by better graphics.
Aug 29, 2011As the Wii version is pretty easy to find for around $10, it's hard to recommend this mixed bag of an update, knowing that the less buggy original is $30 cheaper.
Aug 19, 2011Its wanton weirdness is still as charming as it was on the Wii, and its nonsensical narrative is always enjoyable. So if you're anxious to rekindle your bloodlust in the most over-the-top manner available, Heroes' Paradise may be worth a look.
Aug 16, 2011It's really too bad we had to give this version a lower score, but the game just doesn't live up to the potential of being a superior version of a beloved game. Instead, it's an inferior version due to the controls, and the graphical improvements are nearly nonexistent.
Jun 27, 2011It's worthy for the epic clashes with the bosses, sense of humor and simple and fun gameplay.
Jun 4, 2011An unremarkable port. [July 2011, p.92]
May 24, 2011A fantastic game, held back by some frustrating design decisions. For every moment spent whooping in delight as you vanquish a foe, you'll spend two more grimacing as you have to mow someone's lawn, or try and pry yourself free from a lamppost. When it's good it's almost unbeatable, but the filler in-between is exactly that.
May 21, 2011This game is really strange and has a main character who likes weird stuff, sex, jokes, blood and more. It's actually a Wii-game in High Definition so not an entirely new game. It's funny to play but doesn't offer anything special.
May 19, 2011Quotation forthcoming.
Jun 29, 2011The PlayStation Move support, the humor, the style and the gameplay is fun. But No More Heroes: Paradise does also have a lot of less good point, like the side-missions, sometimes the humor is way to cheesy and the driving elements of the game doesn't really work. The game is a bit extraordinary, but fans of this kind of games will enjoy this.
May 23, 2011It's a 1:1 port from Wii, it's technically equal and Move isn't fully supported. What worked in 2008, simply isn't enough nowadays.
Sep 2, 2011But really, part of what makes No More Heroes so enjoyable is the nearly nonsensical story, which is still intact here. Lots of 4th wall breaking going on by all parties, and a whole lot pokes are made at popular culture and various geek loves, like Star Wars, Transformers, and others.
Jun 4, 2011Riotous irony and violence, spiked by drudgery and muddy visuals. [July 2011, p.92]
Sep 21, 2011But now, over three years since the release of the original, a lot of the gameplay seems lacking.
Aug 25, 2011Heroes is a fine title taken in small bites, but the repetitive gameplay becomes ever more grinding with prolonged exposure. [Oct 2011, p.81]
Aug 2, 2011As a sandbox game No More Heroes is extremely bad – the city is ugly, repetitive and almost completely empty. Those who dig the Japanese craziness will appreciate the game's biggest treasure – its atmosphere and absolute unpredictability. First you save your progress in a toilet, a moment later you run around with a lawnmower doing a side quest, then you agree to assassinate a corporate boss and at last you listen to the protagonist's philosophical monologue about the meaning of life. [August 2011, p.69]
Jul 11, 2011The many sidejobs and minigames lack both variety and challenges, but the excellent boss fights make up for the tedium. It's not perfect, but it does have a lot going on for it.
Apr 20, 2011As stylish as it is, it's never quite as likeable. [May 2011, p.113]
Jun 1, 2011What we are faced with, then, is a port of a game that probably worked on the Wii but which - three years later on a much different console with an asking price of eighty-odd bucks – is as aggressively inessential as its own open-world elements.
Jun 16, 2011No more Heroes: Heroes' Paradise for the PS3 is a sloppy port from the Wii version (2008). The Move controller can be used very effectively for the hack-n-slash part of the game, but the missions are repetitive and boring. Technical problems like bad frame rate, the lack of anti-aliasing and insane tearing are also present.
Aug 31, 2011It's shame that this port has been borked so badly; I don't think No More Heroes found the audience it needed on the Wii, and Heroes' paradise isn't going to do this franchise any favors.
User score distribution:
Positive: 9 out of 14
Mixed: 2 out of 14
Negative: 3 out of 14
Aug 27, 2011
Sep 3, 2014
May 9, 2012


text:
Defining Polynomials
It's been a while since we mentioned them, and now your brain is in a total "exponent" zone. It's okay. We're here for you.
Like aliens, polynomials come in many shapes, sizes, and extradimensional configurations. Just our theory. Anyway, the diversity of polynomials is the reason you're dissecting them. It's important to realize exactly what kind of polynomial you have in your hands. To continue with the alien analogy, there's a big difference between E.T. and that baddie from Cloverfield. It's good to know which type you're dealing with before making arrangements to meet them in the middle of the woods for a picnic.
We determine what kind of polynomial we have by looking at its parts, or terms. Terms like 2x tend to look relatively simple, though they also have their own parts with fancy shmancy names like coefficient (the number attached to the term by multiplication) and variable (a letter representing an unknown value). Terms also have exponents—always.
If a term appears not to have an exponent, that means its exponent is 1. It's still there, but you can't see it. Like one of those stars in the night sky that disappear when you try to look at it directly. Come on, star. Work with us here.
Let's look at a few polynomials.
is a polynomial.
Where is the x in the last term? Hiding, of course. Seriously, it needs to get over its debilitating shyness. Since x = 1 (remember that anything raised to the power of 0 is 1), the last term should be x0 = 1 and...thought of as 4x0
which is a real number multiplied by a whole number power of x.
4x2 – 3x – 1 is also polynomial.
The first term of this polynomial is 4x2. Since we could rewrite the polynomial as
4x2 + (-3)x + (-1),
the second term of this polynomial is -3x and the third term is -1. Watch those negative signs. They'll getcha.
In fact, the following are all polynomials.
- x + 4
- x2 + 2x – 2
- 2x34– 4.5x23 + x3 + 5.3
It's important to remember that not everything that looks like a polynomial is one. Some are wolves in polynomial's clothing. Not all terms, coefficients, and exponents add to be authentic polynomials. For instance, all our exponents in polynomials must be positive whole numbers. Them's the rules.
The following are NOT polynomials. No matter how much they may insist.
- is not a polynomial because . In a polynomial, we're not allowed to raise x to a negative exponent. We tried once and we totally got our knuckles thwacked with a ruler. #darkages
- 4x(¾) is not a polynomial because x is being raised to a power that is not a whole number.
- 5x7 + 2x is not a polynomial because x is not allowed to occur as an exponent in a polynomial. Get down please, x. Don't make us come up there.


text:
@ColdingLight to be honest, I want it to be, but I think that if they don't, the whines from the uberfans will echo in their ears and they'll give it to us. and by us, I mean AMERICA
User Profile
Female, United States
- Joined:
- Tue 28th August, 2012
Recent Comments
sort of on topic, my first shiny was a female Venipede right on route 16 in Unova. it took a looooooong time, but eventually I caught it with a timer ball.
I'd rather hunt for them on my own. he/she may be missing out on a rare Pokémon just to catch a shiny of a less-rare Pokémon like basculin or some other crappy Pokémon.
did any of you guys meet that one veteran trainer that said "my body is ready"? I was laughing so hard... they truly get us, don't they?
I probably shouldn't have liked all of these Pokémon pages on Facebook... they're making me uncontrollably excited.
I like making my own 'mon, in fact, I've made some starters of my own. grass kangaroos anyone? how about a fire LLAMA?! >
what if with streetpass and stuff you gain the ability to trade with people (while setting boundaries) ? for example, say I want a female fletchling. we can set some conditions, and when we streetpass someone with that pokemon available for trade, we'll get it!
Elikiteru looks too much like mawile. if it were green, I would love it. also customizing ftw! just wish they had a girl with glasses.
the sound in pokemon RBY ehrn you run into an wild pokemon... mentally plays whenever i'm in trouble XD. and i would have to say the Dun Dun Dun DUUUUUNNNN!!! from zelda is classic.
i wanna dig holes around allof the citizens so they can't get out but seriously. i can't wait, but my b-day's a month after release.
i got the game and it's amazing! i started with snivy. can anyone share who they started out with/would like to start with?
meh... never been very interested in this anyway. not much of a disney video game fan. now, if nintendo made a super smash bros-style game with this sort of schematic, it would sell like hotcakes! and hopefully not cost as much...
i hope they at least introduce the starter's evolutions, but i would also like to see what the early-dex rodent (think Rattata) or the bird or something.
seriously. the sequel was a flop, even with the brand name, and you think that givin even less content than the original will apologize for these atrocities? these should have been sent to the moon, or even farther.
how many people think he should be revenged upon? this is a complete waste of money to do this. either he buys it and treats it nice, or he doesn't. >
thanks for the cookie anyway, i don't usually trust games with disney labels. i didn't like many of them.
YEEEEEEEEEEEEEESSSS!!!!!!!! finally! i have been waiting for so long... i've trained my pokemon, filled the pokedex to the brim, gotten a pre-order, and now i am 2 days away! WOOOWOWOHOOOO!
ahem... sorry. but you can tell i can't wait, right? XD
i probably wont get it, because it's a bug and steel type, which makes it have tons of weaknesses. :I
that looks so cool. but my first thought when i saw carvai was amy the hedgehog. also, where's Chu Chu Rocket?
@A-Hungry-Banker i like em too, even though in the states they onlty expect 6 yr old girls to like them...
sigma in mega man X6... lol that was a terrible one. unfortunately, i can't seem to get a pic up. can anyone find it?


text:
Hotel Centaur - Rila
Hadji Agapi 9 - Rila
Welcome to Hotel Centaur!
This 3 star Rila hotel has its own restaurant serving breakfast, lunch and dinner where you will find a selection of items to try. Staff are available to provide express check-in and express check-out.
Free Wi-Fi is provided so you can check your in-box whenever you like. This hotel has a business center. The fireplace in the lobby adds to the cosy feel, giving you a nice place to wait for your family or your partner! Other amenities include dry cleaning/laundry and a garden.
The hotel is very nice. The rooms are located in a new building. They are very spa...
Venere Guest, GreeceThese reviews have been left by customers who actually stayed at this hotel
Check Availability at Hotel Centaur
Breakfast at Hotel Centaur
Breakfast is available between 7 AM and 9 AM for a fee.
Facilities at Hotel Centaur
- Business Center
- Laundry service
- Garden
- Internet/Email services
- Restaurant/Dining
Know before you go
- Only registered guests are allowed in the guestrooms.
- Some facilities may have restricted access. Guests can contact the property for details using the contact information on the booking confirmation.
Check-in: between 2 PM and 6:30 PM.
Check-out: before 11 AM.
Extra-person charges may apply and vary depending on hotel policy.Government-issued photo identification and a cash deposit are required at check-in for incidental charges.
Special requests are subject to availability upon check-in and may incur additional charges. Special requests cannot be guaranteed.
City tax and/or any other fees charged by the hotel
The following fees and deposits are charged by the property at time of service, check-in, or check-out.
- Breakfast fee: BGN 5 per person (approximately)
The above list may not be comprehensive. Fees and deposits may not include tax and are subject to change.
Hotel Centaur reviews
- September 2012
- Venere Guest
- Couple
- Greece
The hotel is very nice. The rooms are located in a new building. They are very spacious and clean. Ours had a balcony and an excellent view. I believe that all rooms have balconies but I did not check. For better view, choose the rooms on the top floor, even if there is no elevator. The restaurant is in the old part of the building. They serve typical Bulgarian food, which was very good. The breakfast, not included, was also very rich and tasty. The dining room is very nice, but a better option, if the weather is nice, is the garden. The whole family helps in running the business. It was our first stop in Bulgaria coming from Greece, and we enjoyed the conversation and their advice, which proved to be very useful in the continuation of the trip. It is definitively a hotel that we would recommend. At the end of our trip, we believe it was the best hotel we had in Bulgaria for the money we paid.
Hotel Centaur reviews by TripAdvisor
Room Details
Hotel Centaur has 10 guest rooms. Rooms open onto balconies. Corporate travelers visiting the Rila area will benefit from free wireless high-speed Internet access as well as desks. Private bathrooms are outfitted with showers. Additional comforts include blackout drapes/curtains.
Accommodation Services
- Desk
- Wireless Internet access
- Terrace/Balcony
Distances from Hotel Centaur
Bachinovo Park - 10.7 km / 6.6 miChurch Vavedenie Bogorodichno - 12.4 km / 7.7 mi
American University in Bulgaria - 12.6 km / 7.8 mi
Rila Monastery - 16.8 km / 10.5 mi
Malyovitsa Ski Resort - 22.6 km / 14 mi
Musala Peak - 37.4 km / 23.3 mi
Dancing Bears Park - 38 km / 23.6 mi
Borovets Ski Resort - 41.6 km / 25.9 mi
Osogovo Ski Resort - 42.6 km / 26.5 mi
Bansko Ski Resort - 43.9 km / 27.3 mi
Dobrinishte Ski Resort - 50.3 km / 31.2 mi
Er Sofia Golf Club - 65.1 km / 40.5 mi
Ihtiman City Gallery - 65.6 km / 40.7 mi
Trajn Fortress - 69.5 km / 43.2 mi
Velingrad Museum of History - 70.8 km / 44 mi
The preferred airport for Hotel Centaur is Sofia (SOF) - 65.9 km / 41 mi.
Distances are calculated in a straight line from the property's location to the point of interest or airport and may not reflect actual travel distance.
Distances are displayed to the nearest 0.1 km and mile.
We have the accommodation you need, all over the world
- • Riad Dar Ihssane - Marrakech, Morocco
- • Star Hotel - Frankfurt, Germany
- • Plus Central Hotel Leonhard - Feldkirch, Austria
- • Kapila Business Hotel - Pune, India
- • Days Inn - Elk City, USA
- • The Lince Azores Great Hotel - Ponta Delgada, Portugal
- • Vacation Rental Domina Harem - Sharm El Sheikh, Egypt
- • Hotel Waldachtal - Waldachtal, Germany
- • Hotel Gran Melia Caracas - Caracas, Venezuela
- • Hotel Terminus - Hamburg, Germany
- • Parkhotel 1970 - Michelstadt, Germany
- • Hotel Haus Duden - Wesel, Germany
- • Estelar Paipa Hotel & Centro de Convenciones - Paipa, Colombia
- • Riad L'Alcazar - Rabat, Morocco
- • Appart'é Hôtel - Nice, France
- • Galatone Hotels, Italy
- • Astrakhan Hotels, Russia
- • Cinigiano Hotels, Italy
- • Eleu-dit-Leauwette Hotels, France
- • Castiglione del Lago Hotels, Italy
- • Castiglione del Lago Hotels, Italy
- • Molazzana Hotels, Italy
- • Bedretto Hotels, Switzerland
- • Bailleul Hotels, France
- • Castiglione della Pescaia Hotels, Italy
- • Budapest Hotels, Hungary
- • Setiu Hotels, Malaysia
- • Astorga Hotels, Spain
- • Centurion Hotels, South Africa
- • Arques Hotels, France


text:
Kentucky Artist KM-254 A-Model Mandolin
Sku #524002000019000
- Write a Review
- Seen a Lower Price? Click Here.
FREE SHIPPING on Almost Everything
A serious mando at an affordable price.
Every Kentucky Artist mandolin is meticulously handcrafted from the finest materials to produce the finest possible instrument for players of every level. The redesigned KM-254 Artist A-model mandolin is no exception. With upgraded woods and specifications throughout, the KM-254 offers the serious player a fine instrument whose rich tone and quick response continues to improve as the instrument ages.
- Solid, hand carved and graduated spruce top
- Solid, hand carved and graduated flamed maple back and sides
- Solid one piece maple neck adjustable truss rod
- Nitrocellulose lacquer finish available in sunburst or burgundy
- Rosewood headstock overlay with Mother of Pearl Inlays
- High quality, nickel-plated Gotoh tuners with engraved plate
- Radiused Rosewood fingerboard, adjustable bridge, and bone nut
Bring your A Game with the A Model mandolin — call or click to order now.
Displaying reviews 1-2
Comments about Kentucky Artist KM-254 A-Model Mandolin:
I bought this mandolin based on the Kentucky brand. I did try the KM-150 but it seems too frafile for me, so I bough the KM-254 instead. It is very well built, sounds warm and loud (actually too loud for my ears compared to other mandolins I own and play everyday).
Perfect mandolin for bluegrass type music.
Can't find anything wrong with this mandolin, except for keeping to defend its color when my friends say it's black. It's really dard brown in day light.
Comments about Kentucky Artist KM-254 A-Model Mandolin:
The key to this or any mandolin is to make sure it's properly set up. Mine was and it is a pleasure to play. The solid wood has a nice ring and the action is adjustable to your liking. The color is incredible. I thought it was black when it came out of the case but it's a deep burgundy and the inlays are beautiful. Looks and feels very expensive. So far holds the tuning well and am pleased with the detail of the finish (binding, bridge, tail piece, neck, head, body etc.) all well done. Top of the line for it's price range.
Displaying reviews 1-2


text:
camera charger phone charger passport other important stuff
Looks like a lot of the newish good food/drink options are in the west loop
go to one of these grocers and get truffle truffle merch -- truffles, smores, caramels
bon appetit recos their desserts, esp. the PB one
reco by eater
may not be able to get there easily from downtown reco by Imbibe -- cocktails (gin-focused), sma...
more casual spot by the Girl & The Goat Chick
weekend brunch, dinner/late night creative takes on classic dishes
Chicago, IL
2 ideas
8 ideas
5 ideas
See more ideas to Chicago »
Send a message to collaborators.
Sign In to comment.


text:
wsgiref.simple_server (version 0.1) | index /usr/local/lib/python2.5/wsgiref/simple_server.py Module Docs |
BaseHTTPServer that implements the Python WSGI protocol (PEP 333, rev 1.21)
This is both an example of how WSGI can be implemented, and a basis for running
simple web applications on a local machine, such as might be done when testing
or debugging an application. It has not been reviewed for security issues,
however, and we strongly recommend that you use a "real" web server for
production use.
For example usage, see the 'if __name__=="__main__"' block at the end of the
module. See also the BaseHTTPServer module docs for other API information.
Modules | ||||||
Classes | ||||||||||||||||
Functions | ||
Data | ||
__all__ = ['WSGIServer', 'WSGIRequestHandler', 'demo_app', 'make_server'] __version__ = '0.1' |


text:
Cord Length: |
Warranty: |
Material: |
Watts: |
Voltage: |
Technology : |
Plug Type: |
Motor Type: |
Folica's Warranty
Folica stands behind every product we sell and we honor all manufacturers' warranties. For all electrical appliances we offer complete protection. If you experience any problem with an item purchased from us and it's still under the warranty period, all you have to do is fill out our Warranty Replacement form, send us the items plus a small shipping and handling fee and we will take care of the rest. We'll repair or replace your item with a new product or a Folica Certified Refurbished product. It's that simple.
The Sedu Revolution Dual Voltage Travel Dryer and Sedu Revolution Dual Voltage Compact Styler, creates the perfect hair styling combination for jetsetting. Professional compact styling tools that are designed for use worldwide. This pack also includes Sedu's newest Daily Moisturizing Shampoo & Conditioner!
Sedu Revolution Dual Voltage Travel Dryer has all the professional quality of a full-size Sedu dryer with a compact, travel-friendly design. Made with the highest quality ceramic and tourmaline, this dual voltage dryer features ionic technology. The ionic generator featured within the dryer helps to break down water molecules to easily seal in moisture for healthy, shiny, frizz-free hair. Two speed settings and a cold shot option gives you versatility when traveling and on the go. Includes a detachable concentrator nozzle. Foldable handle and lightweight materials makes this the perfect travel-ready, compact dryer available.
The Sedu Revolution compact styler is a revolution in smalller sized flat irons. This styler has a compact body but plates that are much larger than other travel irons. This makes the Sedu compact styler a great flat iron plus perfect to take with you anywhere! The body measures 6 3/8 inches long with high quality, functional 3/4 inch plates. Plus this iron is dual voltage, making it the perfect travel companion.
Sedu Professional Travel Dryer, Dual Voltage:
- Frizz-free results
- Ionic technology
- Highest quality ceramic and tourmaline
- Generates ions that break down the water molecules
- Seals in moisture for healthy, shiny hair
- Travel ready
- Dual voltage
- Foldable handle
- Made with lightweight materials
- Multiple speed and heat settings - Low and High
- Cool shot option for added versatility
- Includes detachable concentrator nozzle
- 2-year warranty
- Ceramic Tourmaline floating plates leaves hair frizz-free and allows for perfect contact between hair and plates for quick and easy styling
- Convenient size: 6 3/8 inches long with 3/4 inch plates
- Heats up to 350F
- Dual voltage(plug adapter may be necessary for travel outside the U.S.)
- 2 year warranty
- Travel case included. Allow iron to cool completely prior to storing in travel case
Sedu Daily Moisturizing Shampoo
- Versatile for all hair types
- Enhances shine, smoothness and manageability
- Creates luxurious moisturizing lather while cleansing and protecting the hair follicles
- Strengthen and repairs
- Clean scent with mild notes of citrus', spices and flora
- Free of sulfates, phthalates and synthetic color
- Made in the USA
Sedu Daily Moisturizing Shampoo
- Unique blend of Jojoba, Shea Butter & Vitamins E & A
- Promotes hair growth & soothes dry scalp
- Clean scent with mild notes of citrus', spices & flora
- Squeezable bottle
- Free of sulfates, phthlates, & synthetic Color
- Made in the USA
The Sedu Revolution Clipless Curling Iron's exclusive ultra polished barrel ensures the smoothest and longest lasting curls.
New Price: $120.00 -
The Sedu Revolution Diamond Styling Iron is the ultimate universal voltage styling iron with Diamond technology for plate durability and longevity
New Price: $200.00