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Mopar Door Replacement
Written on June 23, 2010 Why Fix A Rusty Door When You Can Get A New One?If there is one thing that car guys can agree on, it's that they hate to repair rust. It doesn't matter how diligent you are to try and eliminate it from your car, it will always seem to find its way back. The problem is, our cars are upwards of 30-years old, and they do have rust. So how does a guy make sure that it (rust that is) doesn't come back? The answer is simple, use all-new sheet metal. Although not impossible having a completely "new" body delivered to your door does alleviate the rust issue, but other problems come into play. But luckily, a lot of new panels-and even complete car sections are starting to hit the market.
This is a good thing for guys building cars, us included. When we started working on our Superbee, we found that the doors were not only rusty, but they were doors from a Plymouth. That may not sound like much of a problem, but Plymouth doors have the interior door locks in a different location than Dodge doors. So it was decided that we needed another door, but where would w find a door that didn't need some kind of body work? We found that Roseville Chrysler/Jeep in Roseville, Michigan, just happens to carry a lot of brand new sheet metal parts for Mopar muscle cars. Not only that, their claim to fame is that they can be your one-stop shop for all you're A-, B-, and E-Body needs. Lucky for us, they happen to have the door we needed in stock, and we were able to continue working on the Bee. Although it's new, how does it look and fit?
If good quality metal is not available, or you just don't want to repair rust, having this alternative available is a great option. There are a few minor variances with the new metal as opposed to the original stuff, but whether or not those variances will be noticeable to the average onlooker, depends on if you point them out. If you don't have the opportunity to place the doors side-by-side, you would not notice much of a difference.
Overall, we're glad we were able to get a new door, and thanks to the folks at Roseville Chrysler/Jeep, our rebuild can continue, and so can yours.


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The Rocket: The Maurice Richard Story
This bio-drama centers around Quebec's most famous hockey player, Maurice "The Rocket" Richard, and focuses on the famous 1955 riot in the Forum.
Cast: Pascal Dupuis, Patrice Robitaille, Hubert Dany, Michel Barrette, Roy Dupuis
Produced by: Daniel Louis, Denise Robert
Directed by: Charles Biname
Written by: Ken Scott
Running time:
2hr 3min
Opens: Nov 30, 2007 NY
Theaters for Today |
Pick a day
on this day. |

subset: commoncrawl


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American Council on Exercise4851 Paramount DriveSan Diego, California 92123
Phone: (888) 825-3636 Fax: (858) 576-6564 Email: firstname.lastname@example.com Live Chat: Chat Now
When clients have lived most of their life either overweight or on an unhealthy track, the same strategies you use to design exercise programs for other clients may not apply. In this course, you'll explore principles, strategies and techniques for exercise program design and implementation for clients who need to change the way they live or manage their weight. Learn methods that will improve their adherence and behavior change theories that will help them achieve and maintain a healthy bodyweight.
You will learn:
This course is included in our Weight Management Specialty Certification.Learn more about how you can become a specialist. »
User Comments: Some overlap with the PT certification but a lot of useful advice for working with overweight clients.
User Comments: This was the hardest of all but very satisfying in content and structure.
User Comments: Basically, a review of material already in the ACE Personal Trainer Manual.
User Comments:
Examples are good and easy to follow. A lot of practical knowledge that should be easy to remember as "common sense".
ACE Response: Thank you for the great feedback
User Comments: Good plan and program strategies for starting out any due conditioned client, obese or not.
User Comments: To Whom It May Concern, I have been an ACE certified trainer and weight loss management coach for approximately 10 years and AFFA certified for 15 years. I have strength trained in the gym for nearly 40 years and personally lost 150 pounds and kept it off for 37 years. I have written a book on weight loss and exercise and have been a professional trainer and coach for 10 years. I have a very successful training and weight loss business. Concerning your course material: If I was a potential client and had a trainer recommend this over complicated ACE approach to fitness and weight loss I would quit. It is bloated and ineffective. It is based on theory and has no validity in the real world. It is only valid in the world of certification and continuing education credits. As a trainer I would not be able to establish a career because of this marketing approach to exercise. During my years in the gym and as a professional strength trainer and coach I have seen scores of so-called "certified trainers and coaches" come and go as their approach and philosophy is flawed. They fail. It is sad because most are highly motivated. I realized early that the ACE approach (via initial certification and CECS) is based on theory and little if any is based on meaningful practical experience as it applies to the exercise and weight loss world. I never use this stuff in my business. My suggestion to anyone who would like to pursue a career as a personal train is to go to the gym, get proactive and develop a valid effective approach to strength training and avoid the "junk" philosophy described in the ACE Integrated Fitness Training Model. Clients want to see RESULTS! Results are what pay the bills, not bloated or theoretical and complicated exercise programs. In addition, a person wanting to develop a career as a weight loss coach would be best served by taking courses on addiction, cognitive therapy, motivation and avoid nutritional recommendations by the government. Best Regards Ron
How Would You Rate This Product Out of 5 Stars?
If you need help selecting appropriate study materials, registering for an ACE exam or answering any questions about your certification, we're here to help. Expert consultants are available via e-mail at email@example.com, on Live Chat or by phone at the number below Monday-Friday, 5 a.m. to 6 p.m. (PST).
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Bague Table Lamp Small -Open BoxThis product is no longer available.100% Price MatchPin It Houzz |
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Lamp Type: INCANDESCENT
Born in Oviedo, a town of Northern Spain, Patricia Urquiola studied first in Madrid and then in Milan where in 1989 she graduated from the Milan Polytechnic with her thesis supervised by the internationally renowned designer and architect Achille Castiglioni. Even though from a sociocultural point of view she is very attached to the Spanish tradition, the studies she got involved with influenced her to such an extent that she became of the most important figures of modern Italian design.
From 1990 to 1992 she taught in the role of assistant professor at the Milan Polytechnic, and at the Ensci (Ecole nationale supérieure de création industrielle) in Paris, France. During that period she also started a partnership with the Italian design company Maddalena De Padova where she met another internationally renowned designer, Vico Magistretti, with whom she designed the chair Flower, the sofa Loom, and the horizontal chair Chaise Longue. Like Achille Castiglioni, Vico Mgistretti noticed her talent and advised her to aspire to achieve the highest professional standards at a worldwide level.
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I have a pair of RIDE team bindings....they are used and have some scraps. But, are still a great pair of bindings. They are aluminum and carbon fiber. Size L
These bindings were only released for team riders and not to the public. They are a few years old.
Here are some pics They are FREE......First come first serve.....come get em'


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pygame is
pygame.org is
OcempGUI - 0.2.6Marcus von Appen (marcusva)Tags:DescriptionOcempGUI is a small toolkit, which comes with various modules suitable for event management, user interfaces, 2D drawing and accessibility. OcempGUI enables developers to enhance their python and/or pygame applications and games easily with graphical UI elements such as buttons, entry boxes, scrolling abilities and more as well as simple event brokers or features, which enhance the program by adding accessibility to its objects. It can save a developer much time by providing a broad range of drawing routines and ready-to-use event capable object types. The developer can focus on the main tasks instead of taking care about needed low-level components, which are given to him with OcempGUI. ChangesFeatures:
Pygame.org account CommentsIf you wish to leave a comment with your pygame.org account, please sign in first.


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Breastfeeding: Common Breastfeeding Challenges Center - Kenosha, WIWebMD Physician DirectoryKenosha, WisconsinBreastfeeding: Common Breastfeeding ChallengesCommon breastfeeding challenges facts**Common breastfeeding challenge facts medical author: Melissa Conrad Stöppler, MD
Read the Breastfeeding: Common Breastfeeding Challenges article » Other Related Breastfeeding: Common Breastfeeding Challenges ArticlesEmergency Contact for Kenosha
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Atrial Fibrillation (cont.)
Daniel Lee Kulick, MD, FACC, FSCAI
Dr. Kulick received his undergraduate and medical degrees from the University of Southern California, School of Medicine. He performed his residency in internal medicine at the Harbor-University of California Los Angeles Medical Center and a fellowship in the section of cardiology at the Los Angeles County-University of Southern California Medical Center. He is board certified in Internal Medicine and Cardiology.
Charles Patrick Davis, MD, PhD
Dr. Charles "Pat" Davis, MD, PhD, is a board certified Emergency Medicine doctor who currently practices as a consultant and staff member for hospitals. He has a PhD in Microbiology (UT at Austin), and the MD (Univ. Texas Medical Branch, Galveston). He is a Clinical Professor (retired) in the Division of Emergency Medicine, UT Health Science Center at San Antonio, and has been the Chief of Emergency Medicine at UT Medical Branch and at UTHSCSA with over 250 publications.
In this Article
- Atrial fibrillation (AFib) facts
- What is atrial fibrillation (AFib)?
- What causes atrial fibrillation (AFib)?
- What are the symptoms of atrial fibrillation (AFib)?
- What are the complications of atrial fibrillation (AFib)?
- What are the risk factors for developing atrial fibrillation (AFib)?
- How is atrial fibrillation diagnosed (AFib)?
- What is the treatment for atrial fibrillation (AFib)?
- Reversing the risk factors that cause atrial fibrillation (AFib)
- Slowing the heart rate with medications
- Anticoagulation to prevent blood clots and strokes
- Converting atrial fibrillation (AFib) to a normal rhythm
- Procedures for treating and preventing atrial fibrillation (AFib)
- What is new in atrial fibrillation (AFib)?
- Atrial Fibrillation - Slideshow
- Take the Atrial Fibrillation Quiz!
- Heart Disease - Slideshow
- Atrial Fibrillation A-Fib FAQs
- Find a local Cardiologist in your town
What is atrial fibrillation (AFib)?
Atrial fibrillation (AFib) is the most common, abnormal rhythm of the heart.
The heart contracts (beats) and pumps blood with a regular rhythm, for example, at a rate of 60 beats per minute there is a beat every second. The heart may beat faster or slower with a shorter or longer interval between beats, but at any one rate the interval between beats is constant. This regular rhythm occurs as a result of regular electrical discharges (currents) that travel through the heart and cause the muscle of the heart to contract. In atrial fibrillation, the electrical discharges are irregular and rapid and, as a result, the heart beats irregularly and, usually, rapidly.
Atrial fibrillation is common; half a million new cases are diagnosed yearly in the U.S., and billions of dollars are spent annually on its diagnosis and treatment.
What causes atrial fibrillation (AFib)?
Normal function of the heart
The heart has four chambers. The upper two chambers are the atria, and the lower two chambers are the ventricles. Blood returning to the heart from the body in the superior and inferior vena cava contains low levels of oxygen and high levels of carbon dioxide. This blood flows into the right atrium and then into the adjacent right ventricle. After the ventricle fills, contraction of the right atrium pumps additional blood into the right ventricle. The right ventricle then contracts and pumps the blood to the lungs where the blood takes up oxygen and gives off carbon dioxide. The blood then flows from the lungs to the left atrium and into the adjacent left ventricle. Contraction of the left atrium pumps additional blood into the left ventricle. The left ventricle then contracts and pumps the blood to the rest of the body. The heartbeat (pulse) that we feel is caused by the contraction of the ventricles.
The ventricles must deliver enough blood to the body for the body to function normally. The amount of blood that is pumped depends on several factors. The most important factor is the rate of contraction of the heart (the heart rate). As the heart rate increases, more blood is pumped. In addition, the heart pumps more blood with each beat when the atria contract and fill the ventricles with additional blood just before the ventricles contract.
With each beat of the heart, an electrical discharge (current) passes through the electrical system of the heart. The electrical discharge causes the muscle of the atria and ventricles to contract and pump blood. The electrical system of the heart consists of the SA node (sinoatrial node), the AV node (atrioventricular node) and special tissues in the atria and the ventricles that conduct the current.
The SA node is the heart's electrical pacemaker. It is a small patch of cells located in the wall of the right atrium; the frequency with which the SA node discharges determines the rate at which the heart beats. The electrical current passes from the SA node, through the special tissues of the atria and into the AV node. The AV node serves as an electrical relay station between the atria and the ventricles. Electrical signals from the atria must pass through the AV node to reach the ventricles.
The electrical discharges from the SA node cause the atria to contract and pump blood into the ventricles. The same discharges then pass through the AV node to reach the ventricles, traveling through the special tissues of the ventricles and causing the ventricles to contract. In a normal heart, the rate of atrial contraction is the same as the rate of ventricular contraction.
At rest, the frequency of the electrical discharges originating from the SA node is low, and the heart beats at the lower range of normal (60 to 80 beats/minute). During exercise or excitement, the frequency of discharges from the SA node increases, increasing the rate at which the heart beats.
Function of the heart during atrial fibrillation
During atrial fibrillation, electrical discharges are not generated solely by the SA node. Instead, electrical discharges come from other parts of the atria. These abnormal discharges are rapid and irregular and may exceed 350 discharges per minute. The rapid and irregular discharges cause ineffective contractions of the atria. In fact, the atria quiver rather than beat as a unit. This reduces the ability of the atria to pump blood into the ventricles.
The rapid and irregular electrical discharges from the atria then pass through the AV node and into the ventricles, causing the ventricles to contract irregularly and (usually) rapidly. The contractions of the ventricles may average 150/minute, much slower than the rate in the atria. (The ventricles are unable to contract at 350/minute.) Even at an average rate of 150/minute, the ventricles may not have enough time to fill maximally with blood before the next contraction, particularly without the normal contraction of the atria. Thus, atrial fibrillation decreases the amount of blood pumped by the ventricles because of their rapid rate of contraction and the absence of normal atrial contractions.
Heart rate during atrial fibrillation
In a heart that is beating normally, the rate of ventricular contraction is the same as the rate of atrial contraction. In atrial fibrillation, however, the rate of ventricular contraction is less than the rate of atrial contraction. The rate of ventricular contraction in atrial fibrillation is determined by the speed of transmission of the atrial electrical discharges through the AV node. In people with a normal AV node, the rate of ventricular contraction in untreated atrial fibrillation usually ranges from 80 to 180 beats/minute; the higher the transmission, the higher the heart rate.
Some older people have slow transmission through the AV node due to disease within the AV node. When these people develop atrial fibrillation, their heart rates remain normal or slower than normal. As disease in the AV node advances, these people can even develop an excessively slow heart rate and require a permanent pacemaker to increase the rate of ventricular contractions.
Source: MedicineNet.com
Women's Health
Find out what women really need.


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Remanufactured 39V0925 Magenta Laser Toner Cartridge for IBM
Our remanufactured replacement for your IBM 39V0925 magenta laser toner cartridge is professionally re-engineered to produce the highest quality printouts for your IBM laser printer, meeting or exceeding the IBM OEM (Original Equipment Manufacturer) standards. Replacing internal parts with brand new ones, including OPC drums and wiper blades, our remanufactured 39V0925 is an excellent choice over costly brand-name 39V0925 laser toner cartridges and supplies. Why buy expensive OEM toner cartridges when our remanufactured replacement laser toners are guaranteed to deliver excellent, dependable results, page after page? Use of our remanufactured 39V0925 laser toner cartridges does not void your Printer's Warranty. You can depend on our remanufactured IBM 39V0925 toner cartridge which is backed by a 100% Satisfaction Guarantee!
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text: ©2013 Eugen Systems and Focus Home Interactive. Developed by Eugen Systems and published by Focus Home Interactive. Wargame: AirLand Battle, Focus, Focus Home Interactive and their respective logos are trademarks or registered trademarks of Focus Home Interactive. All rights reserved. IRISZOOM is a trademark of Ubisoft Entertainment in the U.S. and/or other countries. All other names, trademarks and logos are property of their respective owners


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Conference Tools for 2010 Electronic Materials Conference
Register as a New User
Submit An Abstract
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Presenter/Author Tools
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About this Abstract
2010 Electronic Materials Conference
TMS 2010 Electronic Materials Conference
Presentation Title
L3, Study of Cause of G
-Collapse for Higher Gate Voltages in N-Polar GaN HEMTs with Scaled GaN Channels
Nidhi Nidhi, Oliver Bierwagen, Sansaptak Dasgupta, David Brown, Stacia Keller, James Speck, Umesh Mishra
On-Site Speaker (Planned)
Nidhi Nidhi
Abstract Scope
N-polar GaN/AlGaN HEMTs have been of interest to the nitrides community recently due to their several advantages over Ga-polar GaN-based HEMTs such as lower contact resistance, better electron confinement and enhancement mode operation. Currently, N–polar GaN HEMTs are being scaled to achieve X and Ka band performances. Scaling in N-face HEMTs, however involves scaling of GaN channel along with gate-length, in comparison to Ga-face where the barrier material is scaled instead of the channel. Scaled self-aligned HEMTs on N-face with regrown access regions reported by Nidhi et. al. at IEDM 2009 demonstrated significant reduction in access resistance. However, even though gm remained flat for large values of current due to no source choke in a self-aligned structure, it was observed that gm fell rapidly with higher gate biases even before the gate was forward biased. In this paper, this anomalous gm-collapse for higher gate voltages has been studied by using low temperature Hall and gated TLM measurements. It has been proposed that as the GaN channel thickness is scaled, application of higher gate biases shifts the centroid of the 2-dimensional electron-gas towards the GaN/SiNx-insulator interface, thereby causing mobility degradation which then causes the transconductance to collapse. It is proposed that the insertion of AlN interlayer above the GaN channel could help prevent the penetration of electron wavefunction into the SiNx due to the barrier created by the band-edge discontinuity and reverse polarization fields, and hence reduce the interface roughness and remote impurity scattering from the SiNx interface.
Proceedings Inclusion?
A1, The Electrical Properties of Metal/Gd
/Si Gate Stacks and Their Dependence on the Structure of the Oxide Layer
A2, Spin Dependent Trap Assisted Tunneling in Gd
A3, Crystalline Lattice-Matched Ba
O on Si(001) as Gate Dielectric
A4, Rare-Earth Scandates/Tin Gate Stack on High Mobility Strained SOI for Fully Depleted (FD) Mosfets
AA10, Evolution and Growth of Nanostructures on ZnO with Staged Annealing
AA1, Vacancy Defect and Defect Cluster Energetics in Ion-Implanted ZnO
AA2, O-H-Li-Complex in Hydrothermally Grown Single Crystalline ZnO
AA3, Induced Gap States at Zinc Oxide Surfaces and Interfaces
AA4, Optical Properties of Gd Implanted ZnO Single Crystals
AA5, High-Resolution Laplace DLTS on Mg
O PLD Thin Films
AA6, Observation of a Strong Polarization Induced Quantum-Confined Stark Effect in Mg
O/ZnO Quantum Wells
AA7, Low Temperature Electrochemical Growth of ZnO Nanobelts, Nanowalls, Nanospikes and Nanowires: Growth Mechanism and Field Emission Study
AA8, Synthesis and Field Emission Characterizations of Well-Aligned Single-Crystal Al-Doped ZnO Nanowires Grown at Low Temperature
AA9, Correlation of ZnO Polar Surface Nanostructure with Native Point Defects
B1, Innovative Time-Resolved Optical Characterization Techniques for Monitoring of Carrier Dynamics in Wide Band Gap Semiconductors
B2, Raman Characterization Methodologies Suitable for Determining Graphene Thickness and Uniformity
B3, Characterizing the RF Properties of Semiconductors under Optical Illumination
B4, Admittance Spectroscopy of GaSb(100) and ALD / PEALD Al
Dielectric Interface with Various Surface Treatments
B5, High Temperature Coefficient of Resistance Sputtered A-Ge for Uncooled Microbolometer Applications
B6, Temperature Dependence of the Lattice Constant of Popular III-Sb Binary and Quarternary Alloys
BB1, Demonstration and Room Temperature Electrical Characteristics of a Nitride Hot Electron Transistor with GaN Base of 10 nm
BB2, Novel Cs-Free GaN Photocathodes
BB3, Influence of MOVPE Growth Conditions on Intersubband Absorption in AlN –AlGaN Superlattices
BB4, Engineering Ferromagnetism in Gd-Doped GaN Two-Dimensional Electron Gases
BB5, Nearly Ideal Current-Voltage Characteristics of Schottky Barrier Diodes Directly Formed on GaN Free-Standing Substrates
C1, Pulsed-Laser Atom Probe Tomographic Analysis of Ge-Ge/Co/Mn Thin-Film Superlattices
C2, Atomic Scale Gate Electrode Formed by a Charged Defect on GaAs(110)
C3, Ordered Assemblies of Bimetallic Nanostructure Arrays Utilizing a Self-Assembled Disilicide Nanowire Template
C4, Scanned Probe Characterization of Self-Assembled ErAs/GaAs Semimetal/Semiconductor Nanostructures Grown by Molecular-Beam Epitaxy
CC1, High Al Composition Al
N/AlN/GaN Heterostructures with High Mobility Two-Dimensional Electron Gases
CC2, Two-Dimensional Electron Gas in In
N/Aln/GaN Heterostructure Field-Effect Transistors Depending on Indium Composition
CC3, Source-Drain Regrowth by MBE in Metal-Face AlN/GaN HEMTs
CC4, AlGaN/GaN High Electron Mobility Transistors for Large Current Operation Achieved by Selective-Area Growth Using Plasma-Assisted Molecular Beam Epitaxy
CC5, Transport Studies of AlGaN/GaN Heterostructures with Variable SiN
Passivant Stress
D1, Review of Narrow Bandgap Semiconductor Based THz-Emitters
D2, Electrical and Optical Studies of Melt Grown Optical Grade InAs
D3, Electrical and Optical Properties of Bulk Ternary In
D4, Optical and Thermal Properties of III-V Bulk Ternary In
Sb and In
As Crystals
DD1, Ultraviolet Photodetectors with Novel Oxide Thin Films
DD2, Polarization-Sensitive Schottky Photodiodes Based on A-Plane ZnO/ZnMgO Multiple Quantum-Wells
DD3, A New Approach to Make ZnO-Cu
O Heterojunctions for Solar Cells
DD4, Double Heterojunction Metal-Semiconductor-Metal Photodetector Using ZnO/Si Structure
DD5, A Study of Indium Doped-ZnO/p-Si(111) Diode Characteristics with Various In Mole Fraction
DD6, Effects of High - Energy Electron Irradiation on Pd/ZnO/Si MSM Photodetector: Conduction Mechanisms and Radiation Resistance
E1, Investigation of Physisorbed and Chemisorbed Sulfur Species for GaAs Wafer Bonding
E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors
E3, Effect of Surface Activation for Ge-Si Integration Using Wafer Bonding
E4, Strain, Annealing, and Exfoliation in Hydrogen Implanted GaN for Layer Transfer Applications
E5, Optimization of Adhesive Wafer Bonding for Silicon
E6, Development of Surface Activation Based Nano-Bonding and Interconnect System
EE1, Overgrowth Investigation of Epitaxial Semimetallic Nanoparticles for Photonic Devices
EE2, Regrown InGaAs Tunnel Junctions for TFETs
EE3, Molecular Beam Epitaxy of Very Thin Fluoride Films on Ge(111) and Its Application to Resonant Tunnelling Diodes
EE4, Hole Mobility Improvement in Strained InGaSb Quantum Well with Carbon Doping
EE5, Growth and Thermal Conductivity of Polycrystalline GaAs Grown on CVD Diamond Using Molecular Beam Epitaxy
EE6, Thick HVPE Growth of Patterned Semiconductors for Nonlinear Optics
EE7, Effects of Carrier Localization on Emission Spectra of Dilute GaAsN Materials Doped with Silicon
EE8, Fabrication and Characterization of Free-Standing InGaAs/GaAs Quantum Dot Microbelt-like Optical Resonators
EE9, MBE Grown InGaAsSbN/GaSb Single Quantum Wells for Mid-Infrared Applications
Epitaxial Graphene: Designing a New Electronic Material
F1, Applications of SiC Power Devices – A Materials and Device Perspective
F2, Review of the Dominant Scattering Mechanisms in SiC MOS Devices
F3, A Comparative Study of Thermal and Deposited Gate Oxides on 4H SiC
F4, Magnetic Resonance Studies of 4H SiC MOS Structures
F5, Influence of Geometry on Silicon Carbide JBS Diodes Conduction
FF1, The Influence of the Catalyst on Dopant Incorporation during Si and Ge Nanowire Growth
FF2, Size Effects in Semiconductor Nanowire Synthesis at the Ultimate Limit
FF3, Growth and Applications of Silicon/Germanium Axial Nanowire Heterostructures
FF4, SiGe/Si Selective Etch Structures for Nanowire Release and Assembly
FF5, Diffusion Formation of Nickel Silicides Contacts in Silicon Nanowires
FF6, Comparative Study of Ni-Silicide and Germanide Formation in Contacts to Si and Ge Nanowires
FF7, High Responsivity Vertical Si Nanowire Photodetector Arrays
FF8, Si Nanowire Mats for Large-Area Electronics
FF9, Jet-Printed and Dielectrophoretically Aligned Nanowires for Large Area Electronics
G10, Optimization of Dielectric Passivation of ZnO-Based Schottky Diodes
G1, Temperature Dependent Measurements of ZnO TFTs
G2, Flexible ZnO Temperature Sensors on Plastic Substrate
G3, Improvement of InGaZnO
TFT Device Performance on Glass and Paper Substrates
G4, Sputtering of ZnO Thin Films for TFT on Polyimide Substrates
G5, Zinc-Tin-Oxide Thin-Film Transistors with Al
and ZrO
Gate Dielectrics
G6, Study of CV and Admittance Characteristics of ALD High-K Dielectric ZnO Capacitors
G7, Transparent Rectifying Contacts - A New Concept for Transparent Electronics
G8, Transition from Hopping to Band-like Transport in Solution-Processed Amorphous Zinc Tin Oxide Thin-Film Transistors
G9, A Comparative Study of the Effect of Heat Treatment on the Microstructure and Properties of Colloidal ITO Films and Cold-Sputtered ITO Films
GG1, Bulk-like Thermionic Energy Conversion Device Fabricated from Laminated Nanostructured Metal/Semiconductor Superlattices
GG2, Epitaxial Growth of Transition Metal Nitrides on MgO via DC Magnetron Sputtering
GG3, Enhancement of Thermoelectric Efficiency in Si
/Si Heterostructures
GG4, Isothermal Method for Rapid, Steady-State Measurement of Thermoelectric Materials and Devices
GG6, Thermomagnetic Transport Properties of (Ag
Thermoelectric Materials
GG7, Thermoelectric Properties of Sn-Rich Pb
Te Alloys Doped with Indium
GG8, Incorporation of AgSbTe
to Pb
Te by Mechanical Alloying of End Compounds
GG9, Electron Transport Properties of Mechanically Alloyed N-Type Pb
Te Thermoelectric Elements
H1, Molecular Contact Doping in Organic Thin-Film Transistors
H2, Gate Dielectric Thickness Dependence of OTFT Performance
H3, Arylene Diimide-Thiophene Semiconductors for n-Channel Field-Effect Transistors
H4, Advanced X-Ray Peak Shape Analysis of Organic Semiconductors: Insights into Crystalline Size, Strain, Intragrain Disorder and Implications for Charge Transport
H5, Probing Stress Effects in Single Crystal Organic Transistors by Scanning Kelvin Probe Microscopy
H6, Study on the Resistance of Stretchable Electrodes from Surface Morphology Aided by Computer Modeling
H7, Reverse Offset Roll Printing Using High Resolution Printing Plate for Electronic Application
H8, A Novel Hybrid Electrical and Chemical Barrier Material for Flexible Electronics
HH1, Effect of Contact Modification on Charge Transport at Different Length Scales in Poly(3-Hexylthiophene)-Based Bottom-Contact Field-Effect Transistors
HH2, Low Pressure Chemical Vapor Deposition of Conformal Boron Thin Films on Deep RIE-Etched Si Substrates
HH3, Assessment of the Passivation Capabilities of Two Different Covalent Modifications on GaP (100)
HH4, Comparison of Ga-Polar and N-Polar GaN by KOH Photoelectrochemical Etching
HH5, N-Type Electrodes for GaN-Based Vertical Light Emitting Diodes
HH6, In-situ Ohmic Contacts to p-InGaAs
HH7, Degradation of Ohmic and Schottky Contacts on InGaAs MHEMTs during Bias Stressing
HH8, Characterization of Thin InAlP Native Oxide Gate Dielectric Layers for GaAs MOSFET Applications
HH9, Post-Growth InGaAsP Quantum Well Intermixing for High Saturation Power Semiconductor Optical Amplifiers
I10, Growth and Characterization of In
Sb Ferromagnetic Semiconductor Alloys Using Metal Organic Vapor Phase Epitaxy (MOVPE)
I1, An Organic-Based Magnetic/Nonmagnetic Semiconductor as a Spin Polarized Carrier Source/Channel: Moving Toward Organic Spintronics
I3, Observation of Antiferromagnetic Interlayer Exchange Coupling in a GaMnAs/GaAs:Be/GaMnAs Tri-Layer
I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED)
I5, Properties of MnAs/GaMnAs/MnAs Magnetic Multilayers and Their Application to High Temperature Vertical Spin Valves
I6, The Magneto-Optic Kerr Effect (MOKE) as a Measure of Strain-Induced Ferromagnetism in EuTiO
Grown by Molecular-Beam Epitaxy
I7, Magnetic Circular Dichroism (MCD) Studies on GaMnAs
I8, Magneto-Optical Spectroscopy of MOVPE Grown Ferromagnetic Semiconductors
I9, Micromagnetic Simulation of Focused Ion Beam Patterned Cobalt-Platinum Multilayers
II1, Reduction in Operation Voltage of Light Emitting Diodes Fabricated in Si/III-V-N/Si Heterostructure
II2, GaN/AlN Heterostructures on Vertical {111} Fin Facets of Si (110) Substrates
II3, 2μm Thick Device Quality GaN on Si(111) Using AlGaN Graded Buffer
II4, Compositionally-Graded Layers Composed of Tandem InGaAs InGaP Alloys and Pure GaAsSb Alloys to Engineer the InP Lattice Constant on GaAs Substrates
II5, Characterization of Standard and Ferromagnetic Schottky Barriers on GaP/GaP and GaP/Si Epi-Layers
II6, Silicon Nanostructures Ion Implanted with Carbon and Nitrogen as an Electron Emitting Device
II7, High-Quality (211)B CdTe on (211) Si Substrates Using Metal-Organic Vapor-Phase Epitaxy
II8, Metalorganic Vapor Phase Epitaxial Growth of (211)CdTe on Nanopatterned (211)Ge/Si Substrates Using Full Wafer Block Copolymer Lithography
II9, Effects of Ex-Situ Cycle Annealing on Dislocation Densities of HgCdTe/CdTe/Si Layers
J10, Enhanced Light Absorption in Thin-Film Silicon Solar Cells by Scattering from Sub-Surface Dielectric Nanoparticles
J1, MBE Growth of Metamorphic InGaP on GaAs and GaP for Wide-Bandgap Photovoltaic Junctions
J2, In
As Metamorphic Buffer Layers for Lattice Mismatched Multi-Junction Solar Cells
J3, Quantum Dot n-i-p-i Photovoltaic Devices
J4, Characterization of a
Photovoltaic Cell Containing InAs/GaAs Quantum Dots
J5, MBE Growth of Lattice-Matched 6.1� II-VI on GaSb Substrates
J6, ZnO/ZnTeO/ZnTe Heterojunctions for Intermediate State Solar Cells
J7, Copper Zinc Tin Sulfide Solar Cell Development by RF Sputtering from Binary Targets
J8, Chemical Vapor Deposition of CsSnI
Thin Films for Photovoltaic Applications
J9, Exploring More Effective Catalysts for Metal-Induced Growth of Thin Film Si
JJ1, Internal Quantum Efficiency of Polar and Non-Polar GaInN/GaN Multiple Quantum Wells
JJ2, Optical Polarization of Non-Polar GaInN/GaN LEDs
JJ3, Anisotropic Carrier Mobility in GaN Quantum Well Grown in Non-Polar Direction: Polarization Induced Dipole and Interface Roughness Scattering
JJ4, MBE Growth of Nitrogen-Face Aluminum Nitride by Polarity Inversion Using Magnesium Overdoping
JJ5, Electro-Thermo-Mechanical Simulation of AlGaN/GaN HFETs and MOSHFETs
K10, Growth and Lift-off of High-Quality GaN Thin Films Using Self-Assembled Silica Microsphere Monolayers
K1, Molecular Beam Epitaxy of Catalyst-Free InGaN/GaN Nanowires on (001) Silicon and Nanowire Light Emitting Diodes
K2, Photoluminescence of Bandgap-Graded InGaN Wires Grown by Molecular Beam Epitaxy
K3, Growth of Dislocation-Free and High-Indium-Content InGaN/GaN Coaxial Nanowires
K4, Threshold Studies of Optically Pumped GaN Nanowire Lasers
K5, GaN Nanowire MOSFETs with Fully Conformal Cylindrical Gates
K6, Formation Mechanisms and Kinetics of Negative Nanowires in GaN and ZnO Using In-Situ Transmission Electron Microscopes
K7, Self-Assembled GaN/AlN Nanowire Superlattices on Si toward Non-Polar Intersubband Photonics
K8, HVPE Homoepitaxy of p-Type GaN on n-Type Catalyst Free GaN Nanowires
K9, Homoepitaxial Nucleation of GaN Nanowires in Grooves
KK1, Mg Doped InN and Search for P-Type InN
KK2, Dislocation Reduction via Epitaxial Lateral Overgrowth of InN by Selective-Area-Growth of RF-MBE
KK3, Growth Orientation Control of InN by Pulsed Excitation Deposition
KK4, Optical and Electrical Transport Properties of Nearly Intrinsic and Si-Doped InN Nanowires
KK5, Growth Optimization of Si
on GaN by Metal-Organic Chemical Vapor Deposition
L10, High Temperature Transport Properties of GaN HEMTs with Various Heterostructure Designs
L1, Formation of Structural Defects in AlGaN/GaN High Electron Mobility Transistors under Electrical Stress
L2, Electrical Properties of GaN/AlN/GaN Heterostructures: Presence of 2DHG
L3, Study of Cause of G
-Collapse for Higher Gate Voltages in N-Polar GaN HEMTs with Scaled GaN Channels
L4, Polarization-Engineered Low-Leakage Buffers for Nitride HEMTs Grown by MBE
L5, The Influence of High-k Gate Dielectrics on Deep Traps in AlGaN/GaN High Electron Mobility Transistors Measured by Deep Level Spectroscopy Methods
L6, PECVD-SiN, Si or Si/Al
-Capped ED-Mode AlN/GaN Inverters
L8, Demonstration of Enhancement Mode AlN/Ultrathin AlGaN/GaN HEMTs Using Selective Wet Etching
[Replication or Save Conflict]
L9, Growth and Characterization of InGaN Heterojunction Bipolar Transistors
LATE NEWS: DD7, Switching in Flexible Titanium Dioxide Memristors
LATE NEWS: EE10, Gettered GaP Substrates for Improved Multi-Junction Solar Cell Devices
LATE NEWS: H9, ZnO Nanowire Based Visible-Transparent UV Detectors on Flexible Substrates
LATE NEWS: L7, Molecular Beam Epitaxy of N-Polar InGaN
LATE NEWS: N10, Controlled Fabrication of 1D or Semi-2D Molecular Nanostructures and Study of Optical Properties
LATE NEWS: P5, Application of ZnO for Solar Driven Photoelectrochemical Splitting of Water to Produce Hydrogen
LATE NEWS: U10, Electrical Noise in Exfoliated and Epitaxial Graphene
LATE NEWS: U9, Electron Transport Studies of Free-Standing Epitaxial Graphene Produced from Ion Implanted Semi-Insulating Silicon Carbide
LATE NEWS: V5, Influence of Dopant Atoms on InAs/GaAs Quantum Dot Electronic States
LATE NEWS: W7, Transport Modulation in Ge/Si Core/Shell Nanowires through Controlled Synthesis of Doped Si Shells
LATE NEWS: D5, Initial Studies on Microwave and Terahertz Detection Using AlN/GaN HEMTs
M1, Material and Electronic Properties of CVD Graphene Grown on Ni and Cu then Transferred to Insulators
M2, Fabrication and Characterization of Graphene Materials Grown via CVD on Copper Based Substrates
M3, Kinetic Limitations in the Formation of Graphene on the C-Face of SiC
M4, Graphene to Graphane: Novel Electrochemical Conversion and Possible Applications
M5, Growth of Few Layer Graphene on C-Face SiC
M6, Graphene Growth on SiC, SiO
, and Sapphire with Carbon Addition
M7, Ultrafast Transient Absorption Microscopy Studies of Carrier Dynamics in Epitaxial Graphene
M8, Comparison of Graphene Thickness Determination for MBE Grown Graphene on SiC Using Raman, XPS, and TEM
N1, STM Studies of Hybrid Inorganic-Organic Molecular Magnets on an Ultrathin Insulating Film
N2, Effect of Molecular Tilt Configuration and Interface Dipoles on Molecular Electronic Conduction
N3, Improvement of Transfer Characteristics in Carbon Nanotube Field-Effect Transistors with Au Nano Clusters
N4, Carbon Nanotube Field-Effect Transistor Biosensor with Schottky Barrier Control Gate Electrode
N5, Breakdown Statistics and Nanowire Device Integration of Self-Assembled Nano Dielectrics
N6, Functionlization Studies on GaN Nanowires
N7, Olefin Metathesis Reaction on GaN (0001) Surfaces
N8, Protection of ZnO Nanowires for Liquid-Phase Sensing
N9, Signal-to-Noise Ratio Improvement of Magnetoelectric Laminate Sensor by Multilayer Structure and Direct Integration with Advanced Microelectronics
O10, Vanadium Doping Using VCl
Source during the Chloro-Carbon Epitaxial Growth of 4H-SiC
O1, Analysis of Dislocation Interactions in Low Dislocation Density, PVT-Grown, Four-Inch Silicon Carbide Single Crystals
O2, Formation of a (5-1)-Bilayer-Height Complex Step-and-Terrace Structure on 4H-SiC (0001) by a Spiral Etching Process
O3, Processes Controlling the Carrier Lifetime in n
4H-SiC Epilayers with Low Z
O4, Comparative Studies of Carrier Dynamics in 3C-SiC Layers Grown on Si and 4H-SiC Substrates
O5, Expansion and Contraction of Stacking Faults in 4H-SiC
O6, Influence of Stacking Fault Generation and Half Loop Array on Electrical Behavior of 4H-SiC 10 kV PiN Diodes
O7, Reducing Basal Plane Dislocation Density in Nitrogen and Aluminum Doped 4H-SiC Epilayers
O8, Improved Surface Morphology of 4H-SiC Homoepitaxial Layers Grown on Si-Face 4� off-Axis Substrates
O9, High-Purity Semi-Insulating 4H-SiC Homoepitaxy at a High Growth Rate Using Dichlorosilane for High Power Devices
P10, Dissociation of Photo-Generated Excitons on Carbon Nanotubes at Type-II Heterojunctions
P1, Fabrication of Individual Silicon Nanowire Radial Junction Solar Cells
P2, Wire Textured Multicrystalline Silicon Solar Cells
P3, Efficiency Enhancements for Copper Contaminated Radial p-n Junctions over Planar p-n Junctions in Silicon
P4, Wafer Scale Si Nanowire Arrays for Photovoltaic Applications
P6, Branched ZnO/Si Nanowire Heterostructure Based Photoelectrochemical Cell for Efficient Water Splitting
P7, Solar Cells Based on ZnO/ZnS Core-Shell Nanowires Arrays
P8, Fabrication of Subwavelength Pillar Arrays on GaAs by Confined Self-Assembly Technique for Broadband Antireflection Coating
P9, Hybrid Solar Cell Based on Patterned Nanopillar/P3HT Heterojunction
Q10, Application of Many Electron Charge Transfer Multiplet (CTM) Theory to Band Edge and Band Defect States in High-K Gate Dielectrics and Complex Functional Oxide Thin Films
Q1, Pulsed-dc Reactive Sputtering Vanadium Oxide Thin Films for Microbolometers
Q2, Defects in Low-κ Dielectrics and Etch Stop Layers for Use as Interlayer Dielectrics in ULSI
Q3, Nanocluster and Nanocrystalline Si Trap Distributions within SiO
Field Oxides for Radiation-Tolerant Electronics
Q4, Nanoscale Depth-Resolved Electronic Properties of HfO
/RPAN/Ge and HfSiON/RPAN/Ge Gate Dielectrics for Radiation-Tolerant Electronics
Q5, Nano-Gap Electrodes Formed at the Exposed Edge of Au/Al
/Au Tunnel Structures Grown by Atomic Layer Deposition
Q6, Surface-Interface Conductivity in Thin Film Gd-doped CeO
Q7, Growth of Heteroepitaxial SrRuO
Electrodes on CeO
Buffered R-Plane Al
Substrates by RF Magnetron Sputtering
Q8, Evidence of Ferroelectricity Induced by Epitaxial Strain in Calcium Titanate Thin Films Grown by Molecular-Beam Epitaxy
Q9, Synchrotron Spectroscopy Detection of Spin-Polarized Bands and Hopping-Induced Mixed Valence for Ti and Sc in GdSc
for x = 0.18 and 0.25
R10, Synthesis and Charaterization of p-NiO/n-ZnO Heterojunction Diode by Spray Pyrolysis
R1, Nucleation Layer Based Optimization of MOCVD Grown ZnO by In Situ Laser Interferometry
R2, Influence of Substrate Temperature and Post-Deposition Anneal on Material Properties of Ga-Doped ZnO Prepared by Pulsed Laser Deposition
R3, Epitaxial Electrochemical-Deposition of ZnO on Graphite and p-GaN Substrates
R4, Control of ZnO Epitaxial Growth via Focused Ion Beam Induced Damage in Lattice-Mismatched Substrates
R5, Properties of Nitrogen Molecules in ZnO
R6, High-Quality p-Type ZnO Layers Grown by Co-Doping of N and Te
R7, Magnetic Properties of Mn and N Doped ZnO
R9, Hydrothermal Synthesis of Wide Bandgap Be
O Nanorods for Solar Blind Photodetection
S1, Effect of Inaln Electron Blocking Layer in Visible Light-Emitting Diodes on Quantum Efficiency Grown by Metalorganic Chemical Vapor Deposition
S2, Fabrication of GaN-Based Laser Diode and Laser Diode Facet Formation
S3, Performance Improvement of AlInGaN Visible Laser Diodes by Epitaxial Layer Design
S4, Enhancement of the Light-Extraction Efficiency of GaN-Based Light-Emitting Diodes Using a Graded-Refractive-Index Layer
S5, Nano-Fabrication of Green AlGaInN LEDs – Structural Wavelength Control and Enhanced Light Extraction
T1, Polarization Induced p-Doped Nitride Quantum Well UV LEDs
T2, Structural Characterization of Highly Conducting Al
N (x >50%) for Deep Ultraviolet Light Emitting Diode
T3, Epitaxial Growth and Doping of AlGaN Alloys on AlN Single Crystal Substrates
T4, Morphological Development of Homoepitaxial AlN Thin Films Grown by MOCVD
T5, Aluminum Gallium Nitride Alloys Grown via Metal Organic Vapor Phase Epitaxy Using Digital Alloy Growth Technique
U1, Sub-20 nm Patterning of Graphene Nanoconstrictions Using Nanosphere Lithography and Characterization of Its Electronic Properties
U2, Carrier Transport in Graphene P-N Junctions
U3, Epitaxial Graphene Materials Integration: Effects of Dielectric Overlayers on Structural and Electronic Properties
U4, Comparison of Ballistic Performance of Graphene and Planar III-V MOSFETs for RF Low Voltage Applications
U5, Graphene Fundamental Trade-offs and Asymmetric Bandgap Opening
U6, Hall Effect Mobility of Epitaxial Graphene on Si-Face SiC
U7, Highly Efficient Photovoltaic Devices with Transparent Graphene Electrode and TiOX Layer
U8, Integrated Circuits Based on Carbon-Nanotube Transistors and Amorphous-Carbon Thin-Film Load Resistors
V1, Toward Conversion from Electron Pairs to Photon Pairs in Quantum Dots
V2, Tensile-Strained Self-Assembled III-V Nanostructures
V3, Self-Assembled In
As Quantum Dots on GaP(001)
V4, Time-Resolved Spectroscopy of Single Colloidal CdSe Nanowires with Picosecond Resolution
V6, Resonant Periodic Gain InAs Quantum Dot VECSEL
V7, Quantum Dot Light Emitting Devices and Exciton Recombination Zone
V8, Thermal Stability in Emission Peak in Multilayer InAs/GaAs Quantum Dot Heterostructure in Laser Application
V9, Enhancement of Luminescence Efficiency in InAs/GaAs Quantum Dots by Proton Irradiation
W10, Simulation of the Influence of Grain Boundaries on Resistivity via the Wigner-Fokker-Planck Equation
W1, Single Crystalline Wurtzite GaAs Nanoneedles Epitaxially Grown on Highly Lattice-Mismatched Sapphire with Bright Luminescence
W2, Twinning Superlattice in VLS Grown <110> Planar GaAs Nanowires Induced by Impurity Doping
W3, Photoluminesence of InGaAs Nano-Pillar Arrays on GaAs Substrate
W4, Synthesis and Characterization of GaAs/MnAs Core/Shell Nanowires
W5, Contact Laser Annealing Effects on Indium Oxide Nanowire Transistors
W6, Vertical InSb Nanowire Arrays Electrodeposited into Porous Anodic Alumina Templates on Silicon Substrates
W8, Formation of Periodic Nanostructures through Kirkendall Constitutional Interdiffusion in Epitaxial Heterostructures
W9, Thermal Conductivity of Aluminum Nanowires near Room Temperature: Direct Measurements and Theory
X10, Effect of Aluminum Composition on Current-Voltage Characteristics of AlGaSb/InAs Tunnel Junction
X1, Minority Carrier Lifetime in LWIR Type II Superlattice Detector Structures Using Time-Resolved Photoluminescence
X2, MOCVD Growth of InAs/GaSb Type-II Superlattice Structures and Photodiodes for Mid-Infrared Detection
X3, Investigation of Passivation Techniques on InAs/GaSb Strained Layer Superlattice Long Wave Infrared Detectors
X4, Investigation of Antimonide Infrared Detectors Based on the nBn Design
X6, Quinternary GaInAsSbP on GaAs Substrates Grown by Metal Organic Vapor Phase Epitaxy (MOVPE)
X7, Growth of GaAs
As Multi-Quantum Well Structures on GaAs
X8, Perforated (In)GaSb Quantum Wells on GaSb Substrates through the Use of As
Based In-Situ Etches
X9, Antimonide VECSELs on AlGaAs DBRs
Y1, Dislocation Filtering in GaN Nanorods
Y2, Threading Defect Elimination in GaN Nanostructures
Y3, Yellow-Orange Luminescence from III-Nitride Nanopyramid Heterostructures
Y4, Molecular Beam Epitaxial Growth and Characterization of InGaN/GaN Dot-in-a-Wire Nanoscale Heterostructures on Si
Y5, Electrochemical Etching of GaN and Its Applications
Z1, Luminescence Recombination Dynamics of Ytterbium Implanted GaN Epilayers
Z2, Energy Levels of Nd
Ions in
In Situ
Doped AlN
Z3, Correlation of InGaN Growth Parameters, Defects and MQW Radiative Efficiency for Blue to Green Emission
Z4, Proton-Irradiated AlGaN/GaN HEMT at 5 MeV Protons
Z5, Effect of Traps Spatial Localization on GaN HEMT Static Characteristics
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text: HOMMARD Jean Baptiste Jean Baptiste Hommard arrived in La. on the Profond that left La Rochelle with officers and workers for the Law Concession in June of 1720. He is listed as jean Baptiste Honnart (Conrad 1st Families, Vol I:83). He was born ca 1698-99 in Neuilly St. Front, Diocese of Soisson, Picardy. His marriage record does not give parents but it is assumed that he was son of Louis Hommard and Elizabeth Caya, Callin, Cajalas and brother of Elizabeth and Adrienne Hommard, passagers also on Profond. He is shown to be of the Arkansas Law Colony when married 18 Jan 1724 (St Louis Cathedral Marriage 1720-1730) to Anne Marguerite Mossel listed as native of Minden in Hanry [?] widow of Jean Danferster when she remarried in 1742 she is listed as Anne Marguerite Martel, native of Frankfort (De Ville, 1st settlers of Point Coupée) By 1731, he was living on the West side of the Mississippi River from Point Coupée to New Orleans. He owned the farm on which he lived with wife, 3 children and 2 negroes. (Conrad, 1st Families, Vol II, 61) 6 Dec 1738 Jean Baptiste Homard of Point Coupée claimed expense of journey to N.O. on citation of Council re: his negroes accused of theft (LAQ Vol 16:143) He died at Point Coupée 3 July 1740 and buried there 4 July 1740. He was aged about 42 years at death. Issues: 1. Jean Louis Hommard b 13 Mar 1725 in Ark. d. 28 June 1747 Point Coupée 2. Marie Margueritge Hommard b. 10 Aug 1727 in Ark. 3. Baptiste Martin Hommard b. May 1731 Point Coupée d. there and buried 29 Jan 1748 4. Catherine Magloire Hommard bpt 12 Jan 1733 b. Point Coupée


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Top Definition
When a crappy and miserable weather pattern is stuck in an area and just won't move on. First used on television by Twin Cities KARE 11 meteorologist Sven Sundgaard to describe a way too long set of days in late October 2012 filled with cold and rain.
Hurrican Sandy was preventing the atmospheric flow of things over Minnesota, resulting in atmospheric constipation.
από claybabe2k
25 Οκτώβριος 2012