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2011 Electronic Materials Conference
2011 Electronic Materials Conference
Presentation Title
M4, Semipolar AlGaN Buffers for Deep Ultraviolet Diode Lasers
Roy Chung, Erin C. Young, Dan Haeger, Steven P. DenBaars, James S. Speck, Dan Cohen
On-Site Speaker (Planned)
Roy Chung
Abstract Scope
Semipolar substrates offer a number of advantages for UV emitting AlGaInN based laser diodes, including higher gain, an ability to operate with nearly transverse electric (TE) optical modes, and an ability to provide pseudo-substrates with tailorable lattice constants, something unavailable from bulk c-plane AlN substrates. When high aluminum content buffer layers are grown on semipolar bulk GaN substrates, strain relaxation via glide of threading dislocations forestalls cracking, with the MD segments constrained to the heterointerface, allowing subsequent growth of laser quality material. AlxGa1-xN layers with 0.1 < x < 0.5 have been grown on (20-21) bulk GaN substrate by metal organic chemical vapor deposition (MOCVD). InGaN/GaN multiple quantum wells (MQW) were grown on top of 1.2 μm thick relaxed Al0.22GaN0.78N on (20-21) GaN and directly on GaN. While strained MQW on GaN clearly showed TDs from cathodoluminescence (CL), MQW on relaxed AlGaN showed dark lines, suggesting the generation of MDs and disappearance of TDs. As the aluminum composition in AlGaN increased, single Al0.4Ga0.6N layer started showing cracks along c-projection direction at about 300 nm. This could be due to too much strain and gliding of TDs is no loner enough to release the strain for high aluminum content AlGaN directly grown on GaN. We have also grown AlGaN on (20-21) GaN, step grading to higher aluminum composition. This allows relaxation of AlGaN without generation of new TDs, ultimately leading to high quality AlGaN template for laser diode growth. On-axis reciprocal space mapping of the graded AlGaN showed tilt at each interface associated with the presence of MDs. This is a clear indication of the relaxation of each AlGaN layer. When more than 1 μm thick Al0.45Ga0.55N layer was grown on the graded AlGaN, the crack healing was also observed. The diode operation of near UV light emitting diodes (λ~385 nm) on the relaxed buffer has been shown and is a promising result for device application of relaxed AlGaN template. In this study, we report on the growth of semipolar AlGaN with high aluminum content on bulk (20-21) semipolar GaN. Single AlGaN and step graded AlGaN layers were grown by MOCVD and characterized by various analytical techniques such as CL and x-ray diffraction to understand the relaxation mechanisms in semipolar AlGaN layer.
Proceedings Inclusion?
A1, Nitride Film Growth by Migration Enhanced Afterglow (MEAglow)
A2, Observation and Elimination of Indium Surface Segregation
A3, Depth Resolved Strain and Composition Studies on InGaN and AlInN Films Grown by Plasma-Assisted Molecular Beam Epitaxy
A4, Low Temperature p-GaN Grown by NH
A5, Epitaxial Lateral Overgrowth of Aluminum Nitride by Molecular Beam Epitaxy
A6, Effect of Superlattices and Surfactants on AlN Homoepitaxy by MBE
AA1, Self-Assembled, Tensile-Strained III-V Islands on (110) and (111)A Substrates
AA2, Atomic Structure of InAs/InGaAsP/InP(001) Quantum Dashes and Decomposition of the InGaAsP Matrix Material
AA3, Photoluminescence and Thermal Carrier Activation in Type-II ZnTe/ZnSe Quantum Dots
AA4, Temperature Dependent Photoluminescence of Ensemble and Single InAs/InGaAlAs Quantum Dots
AA5, Atomic Structure and Optical Properties of Submonolayer InAs/GaAs Depositions
B1, Phonon Engineering through Crystal Chemistry
B2, Ca
and Ca
; Inexpensive, Non-Toxic Thermoelectric Materials for Waste Heat Recovery
B3, The Impact of Nano-Inclusions Introduced by Mechanical Alloying on Thermoelectric Transport in Pb
Te: Experimental Results and Theoretical Predictions
B4, Reevaluation of PbTe
as High Performance n-Type Thermoelectric Material
B5, The Universal Optimal Seebeck Coefficient for Maximum Power Factor
BB1, Local Density of States and Semimetallic Behavior of Rare Earth-V Nanoparticles Embedded in a III-V Semiconductor Matrix
BB2, A Simple Thermodynamic Model for the Doping and Alloying of Nanoparticles
BB3, Band Structure and Thermal Escape Processes of Strained InGaSb/AlGaSb Quantum Wells
BB4, Formation and Templating of III-V Semiconductor Nanospikes by Focused Ion Beams
BB5, Structural and Optical Characterization of Growth Pause Induced Ripening of InAs/GaAs Quantum Dot Heterostructures.
C1, Scanning Gate Spectroscopy: A New SPM Technique for Nano-Devices on Oxide Surfaces
C2, Measurement of Nanoscale External Quantum Efficiency of Plastic Solar Cells by Photoconductive Atomic Force Microscopy
C3, Role of Ethylene on Thermal and Chemical Stability of TiO
C4, Combined XSTM and High Resolution XRD Study for Quantitative Structural Descriptions of Type-II Superlattice IR Detectors
C5, In Situ Transmission Electron Microscopy and Photoluminescence Study of Ge-Core/SiGe-Shell Nanowires
C6, Local Strain Characterization of MEMS-Based Silicon Beams by Raman Spectroscopy
CC1, In Situ High-Temperature Scanning Tunneling Microscopy Studies of Graphene Growth on 6H-SiC(0001)
CC2, Electrical Characterization of Graphene-Semiconductor Heterojunctions
CC3, Correlated Conductivity and Work Function in Epitaxial Graphene
CC4, Response of Graphene-Based Field Effect Devices Exposed to Gamma and Neutron Irradiation
CC5, Surface Adsorption and Charge Transport in Epitaxial Graphene on 6H-SiC
CC6, Graphene Reinforced Composites as Efficient Thermal Interface Materials
CC7, Frequency Domain THz Characterization of Graphene
CC8, Charge Carrier Dynamics in Graphene: Suspended vs. Supported
CC9, Polariton Enhanced IR-Reflectivity of Epitaxial Graphene on SiC
D1, Tuning of Plasmonic Cavity Resonances Using Atomic Layer Deposition
D2, Tunable Infrared Absorption of Nano Plasmonic Structures
D3, In Situ Spectroscopic Ellipsometric Analysis of Thin Silver Films Deposited Using DC Magnetron Sputtering and HiPIMS Techniques
D4, Second Harmonic Generation in a Metamaterial Resonating at Fundamental and Second Harmonic Frequencies
D5, Optical Dispersion of Amorphous Germanium Thin Films as a Function of Thickness and Deposition Parameters
D6, LATE NEWS: Optical Properties of FIB-Fabricated Metallic Nanostructure Arrays on Compound Semiconductor Surfaces
DD10, Characterization of
-Ordered Full-Heusler Co
Alloy Thin Films Formed by Silicidation Technique Employing Silicon-on-Insulator Substrate
DD1, Enhanced Spin Injection and Spin Lifetimes in Graphene
DD2, Enhancement of Spin Torque by Proximity to Other Domain Walls
DD3, Spin Seebeck Effect in MnAs/GaMnAs Bilayers
DD4, Universal Valence-Band Picture of the Ferromagnetic Semiconductor GaMnAs Obtained by the Resonant Tunneling Spectroscopy
DD5, Fe3O4/GaAs Hybrid Ferromagnet/Semiconductor Nanostructures
DD6, Magnetic Depth Profile of Mn-Graded (Ga,Mn)As
DD7, Manganese-Doping of Group IV Semiconductor Surfaces and Nanostructures
DD9, Formation of Half-Metallic Ferromagnet Tunnel Junctions of Co
/Si Using Radical Oxynitridation Technique
E1, Quantum Dot Red/Green/Blue/White Light-Emitting Electroluminescent Devices with a Low Turn-on Voltage and High Brightness
E2, Fabrication of Flexible Single-Crystal Devices on Electrically-Conductive Substrates
E3, A Compensation Mechanism for Flexible and Electrically Stable Solution-Processed Organic Field-Effect Transistors
E4, Ambipolar Charge Carrier Transport in Organic Thin Films
E5, Application of Vapor Forms 1-Octanethiol Coated Copper Conductive Ink for Ink-Jet Printing
E6, LATE NEWS: Impact of Mechanical Stress on Stability of Flexible Amorphous Silicon Thin Film Transistors
EE1, Quantitative Analysis of Lattice Disorder and Crystallite Size in Organic Semiconductor Thin Films, and Implications for Charge Transport
EE2, Following Charge-Trapping Chemical Reactions in Pentacene Films by Selective Chemical Doping and Wavelength-Resolved Electric Force Microscopy
EE3, Molecular Contact Doping for Organic n-Channel TFTs and Fast Complementary Circuits
EE4, Charge Trapping and Localization Due to Paracrystalline Disorder in High Performance Polymeric Semiconductors
EE5, Probing the Microstructure of Buried Polymer-Polymer Interfaces with Thin Film Transistors
EE6, LATE NEWS: Formation of Kirkendall Voids and its Role in the Performance of Contact to P-Type Silicon Nanowires
EE7, Materials Requirements for Low-Voltage Flexible Organic Transistors and Circuits
EE8, Organic Transistor-Based Memory
EE9, From Nano- to Micro-Scale Control of Crystalline Order in Soluble Small-Molecule Organic Semiconductors
F1, Design and Growth of InAs Quantum Dash Based MWIR VECSELs
F2, Influence of Surface Patterning on Droplet Epitaxy and Photovoltaic Properties of InAs/GaAs Quatum Dots
F4, Visible Light Emitting Diodes Based on Self-Assembled In
As Quantum Dots on GaP
F5, Large Area Growth of GaAs Solar Cell Based on Nanowire Structure
F6, Output Polarization Dependence of Asymmetric Current Injection VCSELs on Crystalline Direction and Ion Implantation
FF1, n+GaAs Sheet Resistance Saturation and Implications to BiHEMT Growth
FF2, Metamorphic p-i-n InGaAs Photodetectors Grown by MOCVD
FF3, Optimized Growth Condition and Dot Geometry in InAs/InGaAs Sub-Monolayer Quantum Dot Infrared Photodetector
FF4, Epitaxial Growth of InGaAs/InAlAs/InP Quantum Cascade Lasers by Metalorganic Chemical Vapor Deposition
FF5, GaInNAsSb Quantum Wells with Strain-Compensating GaAsP Layers for GaAs-Based 1.55 μm Lasers
G1, Molecular Beam Epitaxial Growth of Zn
/GaAs and ZnS/GaAs Heterostructures for Photovoltaics
G2, ZnSnN
: A New Earth-Abundant Semiconductor for Solar Energy Conversion
G3, Electrodeposition of Indium Sulfide Films from Organic Electrolytes
G4, Spatially Resolved Responses of Nanoscale Photovoltaic Model Devices
G5, Challenges of Hall Measurements on Low Mobility Materials and How to Overcome Them
GG1, Highly Polarized Spontaneous Emission from Semipolar (20-2-1) InGaN/GaN Light-Emitting Diodes
GG2, Characterization of Green Semipolar (20-21) GaInN/GaN Multiple Quantum Well Light-Emitting Diodes Grown on Freestanding GaN Substrate
GG3, Optical Emission Patterns in Semipolar (11-22) GaN Light Emitting Diodes on Planar m-Plane and Etched r-Plane Sapphire
GG4, Microscopic Optical Properties of Semi-/Nonpolar GaN with InGaN SQWs on Top Grown Directly on Patterned Si Substrate
GG5, Strain Relaxation in Semipolar Nitrides for Optoelectronic Device Applications
H10, Growth and Characterization of npn-GaN/InGaN/GaN Double-Heterojunction Bipolar Transistors on a Free-Standing GaN Substrate
H1, Quantization and Bias Effects on Gate Capacitance of Scaled GaN HFETs
H2, Direct Correlation between Access Region Trap Generation and Field-Induced Degradation in AlGaN/GaN High Electron Mobility Transistors
H3, Temperature Dependent Off-State Degradation of AlGaN/GaN HEMTs
H4, Noise Measurements of Nanowire FET Sensors for Sensitivity Determination
H5, Piezoresistive Microcantilever with Embedded AlGaN/GaN HFET for Sensing Applications
H6, N-Polar GaN HEMTs Grown by MBE and MOCVD with fmax of 255 and 250 GHz, Respectively
H7, Flattened Transconductance (gm) in a Highly Scaled AlGaN/GaN HEMT Using a Polarization-Induced 2D/3D Hybridized Channel Design
H8, Fabrication of AlGaInN/GaN Transistors with ft and fmax Exceeding 100 GHz
H9, Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors
HH10, Strain: A New Strategy of Tuning Doping Site and Type in Semiconductors
HH1, Surface Donors Dominate the Conductivity of In
Thin Films
HH2, The Role of Native Point Defects in Highly n-Type Degenerate (Zn,Ga)O Films
HH3, High Resolution Photoluminescence Spectroscopy of Donors in Undoped and Indium-Doped ZnO Grown by Metalorganic Vapor Phase Epitaxy
HH4, Trap-Limited Li Diffusion in Melt Grown ZnO
HH5, Identification of Acceptor States in Li Doped ZnO Using Nanoscale Depth-Resolved Cathodoluminescence Spectroscopy
HH6, Zn(Mg,Cd)O Epitaxy for Optoelectronic Applications
HH7, ZnO and Al
Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition and Plasma Enhanced Chemical Vapor Deposition
HH8, Thin Films of ZnO Prepared by Reactive Pulsed Arc Molecular Beam Deposition
HH9, Atom Probe Tomography of ZnO Nanowires
I10, Highly Ordered Vertical Silicon Nanowire Arrays Embedded in Polymer for Thin-Film Thermoelectric Devices
I1, A Tubular Thermoelectric Generator with Piled Conical Rings Structure
I3, Thermoelectric Properties of ErSb:In
Sb Thin Films Grown by MBE
I4, Nanoparticle Size Dependence of the Electrical, Thermal, and Optical Properties of Er-Doped In
I5, Improving Thermoelectric Power Generation Efficiency with Epitaxial TbAs/III-V Nanocomposites
I6, The MOCVD Growth of Erbium Antimonide Nanocomposite Embedded III-V Host Materials and Characterization for Thermoelectrics
I7, Cross-Plane Transport Properties of p-Type La0.67Sr0.33MnO3/LaMnO3 Perovskite Oxide Metal/Semiconductor Superlattices
I8,Temperature-Dependent Thermal Properties of HgCdTe Superlattices
I9, Development of III-Nitride Materials for Thermoelectric Applications
II10, Vertical Transport in GaN/AlGaN Resonant Tunneling Diodes and Superlattices
II1, Absence of Electron Accumulation at InN(11-20) Cleavage Surfaces
II2, MBE Growth Study of AlInN and AlInN/GaN Heterostructures for Intersubband Device Applications
II3, Room Temperature near-Infrared AlInN/GaN and AlGaN/GaN Quantum Well Photodetectors Grown by Molecular Beam Epitaxy
II4, Characterization of Lateral and Vertical Inhomogeneities in InAlN Grown by Plasma-Assisted Molecular Beam Epitaxy
II5, Electrical Tuning of InGaN Quantum Dots in GaN Photonic Crystal Cavities
II6, Investigation of Indium and Impurity Incorporation of InGaN Films on Polar, Nonpolar, and Semipolar GaN Orientations Grown by Ammonia MBE
II7, Piezoresponse Force Microscopy of InGaN/GaN Quantum Dots
II8, InGaN/GaN Core-Shell Nanorod Arrays Grown by Selective Area Growth for InGaN-Based Light Emitting Diodes
II9, Molecular Beam Epitaxial Growth and Characterization of InN Nanocolumns on GaN Templates
J10, Role of Defect States in Charge Transport in Semiconductor Nanowires
J1, Molecular Surface Passivation Effects on Indium Oxide Nanowire Transistors
J2, Electrically Pumped ZnO Nanowire p-n Junction Laser
J3, Electrical Transport Study of Schottky Barrier Based ZnO NanoWire FETs
J4, ZnO Nanowire-Based Field Effect Transistors with Non-Volatile Memory Function Using Mobile Protons
J5, Raman and Electrical Probes of Carrier Concentration in Si-Doped GaN Nanowires Grown by Plasma-Assisted MBE
J6, Electrodeposited InSb Nanowires: Structural Properties and Transistor Performance
J7, Electron Transport in One-Dimensional InAs Nanowire Transistors
J8, Electrical Properties of Axial and Radial Nanowire pn-Junctions – A Comparison
J9, GaAs Core-Shell Nanowire-Based Vertical p-n Diodes
JJ1, Growth Investigations of Lattice-Matched III/V Compound Materials on (001) Si Substrate for Optoelectronics
JJ2, Coalescence Phenomena in Narrow-Angle Stripe Epitaxial Lateral Overgrown InP by MOCVD
JJ3, Growth Habit Control of Epitaxial Lateral Overgrown InP on Si Substrates by MOCVD
JJ4, Integration of InAs/GaAs Nano/Micro Structures with Silicon by Selective Area Epitaxy
JJ5, The Electrical Nature of Structural Defects in InSb Synthesized by Molecular Beam Epitaxy on Si (100) and GaAs (100)
JJ6, Low Leakage Current AlGaN/GaN HEMTs on Si Substrates with Partially Mg-Doped GaN Buffer Layer by MOCVD
JJ7, Effect of Growth Temperature on Composition of InAlN Alloy Grown by GSMBE on Si (111)
JJ8, Vapor Phase Epitaxial Growth of (211)B CdTe on Nanopatterned Si for HgCdTe Based Infrared Device Applications
K1, The Evolution of the SiC Power MOSFET from Lab Demonstration to Commercial Product
K2, A Bondable Metallization Stack that Prevents Diffusion of Oxygen and Gold into Monolithically Integrated Circuits Operating above 500 �C
K3, High-Low Temperature Performance of 20 A, 1200 - 1700 V 4H-SiC Power MOSFETs
K4, Improved Microstructure and Ohmic Contact of Nb Electrode on N-Type 4H-SiC
K5, Slow Thermal Emission from Traps in 4H-SiC Epilayers
K6, Deflection of Threading Dislocations with Burgers Vector c/c+a Observed in 4H-SiC Substrates and Axial Slices with Associated Stacking Faults
K7, Stacking Faults Originating from BPDs in High-Doped Buffer Layers
K8, Step Controlled Epitaxy on 4° and 1° Off-Cut 4H and 6H-SiC Substrate Using Dichlorosilane
K9, Defect Structures of B
Single Crystalline Epitaxial Layers on Off-Axis (0001) 4H-SiC Substrates
KK10, Environmental Stabilization and Functionalization of ZnO Nanobridge Sensors Fabricated Using Carbonized Photoresist
KK1, Size Effects in Ni Catalyzed Germanium Nanowire Growth
KK2, Effects of Annealing on Sub-Eutectic Heteroepitaxial Growth of Germanium Nanowire on Si (111) Substrate
KK3, Catalyzed Vapor-Liquid-Solid Oxidation: Germanium Oxide Nanowires
KK4, Catalyst Proximity Effects on the Synthesis of Si Nanowires for In Situ Scanning Electron Microscope Li Intercalation Experiments
KK5, A-Si / Si Nanowire Hybrid Photovoltaics
KK6, Internal Quantum Efficiency in Nanorod LED Arrays Created by Top-Down Techniques
KK7, Electrochemically Deposited Branched Indium Antimonide (InSb) Nanowire Arrays as "In-Situ" Anti-Reflective Structures
KK8, Aligned Assembly of Nanowire Arrays with Intrinsic Control
KK9, Nanostructure Decorated AlGaN/GaN HEMTs for Chemical Sensing
L1, Single-Layer MoS2 Transistors
L2, Role of Optical Phonon in Graphene Nanoribbon Tunnel Transistors: Strategy for Abrupt Switching from Material's Point of View
L3, Fabrication of Top-Gated Sub-10 nm Epitaxial Graphene Nanoribbon FETs Using Hydrogen Silsesquioxane(HSQ)
L4, Semiconducting Graphene: Prospects and Challenges
L5, Influence of Trapped Single Charges in Single Walled Carbon Nanotube Transistor with SiN
Double Wrapped Layers
L6, Deposition and Characterization of AlN Dielectric Films on Graphene
L7, Graphene as a Heat-Spreading Layer in Blue LEDs
L8, RCA Clean Assisted Transfer of CVD Grown Graphene
L9, LATE NEWS: Electrical and Materials Reliability Issues in Single-Walled Carbon Nanotube Interconnect Devices
LL10, 3C-Silicon Carbide Epitaxy by Means of Silicon Carbide-on-Silicon Wafer Bonding
LL1, Electrochemical Etched InP Porous Layer Formation for Layer Transfer
LL2, Ion-cut Transfer of InP-Based High Electron Mobility Transistors Using Adhesive Bonding
LL3, Investigation of PECVD Silicon Nitride Deposition on Porous Si
LL4, Double Layer Transfer Made by the Smart Cut™ Technology and Embedded Porous Silicon Layer
LL5, LiNbO
Thin Single Crystal Layer Transfer by Smart Cut™ Technology
LL6, InGaAs-InGaN Wafer-Bonded Current Aperture Vertical Transistors
LL7, Electrical Conductivity of Directly Bonded Silicon/Germanium Hetero-Structures
LL8, Interface Barrier Height Reduction in Wafer Bonded n-GaAs / n-GaAs by Sulfur Passivation Methods
LL9, Comprehensive Investigation of Ge-Si Bonded Interfaces Using Surface Activation
M10, Effects of Dislocations on Luminescence in
-Plane InGaN Quantum Wells
M1, A Defect-Based Mechanism for Efficiency Droop in Nitride Light Emitting Diodes
M2, Impact of Extended and Point Defects on InGaN LED Efficiency
M3, Effect of In
N Electron Blocking Layer on Quantum Efficiency in Visible Light-Emitting Diodes Grown by Metalorganic Chemical Vapor Deposition
M4, Semipolar AlGaN Buffers for Deep Ultraviolet Diode Lasers
M5, Low Dislocation Density Al
N by Overgrowth of Patterned Templates
M6, Enhancement of Hole Transport and Carrier Distribution in InGaN/GaN Multiple Quantum Wells by Controlling Indium Content of p-Type Layer in Visible Light-Emitting Diodes
M7, P-Side-Down, Ga-Polar, Green-Emitting Single Heterostructure LEDs
M8, Characterization of Green Semi-Polar (10-11) GaInN/GaN Light Emitting Diodes
M9, Optical Properties of Molecular Beam Epitaxy Grown High in Content (~20%) InGaN film Emitting in Green (540 nm)
MM10, Resistance and Transparency Study of Contacts to p-Type GaN
MM1, Surface Preparation of GaP for Regrowth on Epitaxially-Inverted Structures on Silicon
MM2, Oxide Surface Passivation of Ge for Optoelectronic Applications
MM3, Oxygen-Enhanced Wet Thermal Oxidation of In
MM4, Wet Etching Technique for Fabrication of GaSb Based Mid Infrared Single Lateral Mode Lasers
MM5, Fabrication of GaAs Micromechanical Resonator Arrays for Single Molecule Detection
MM6, Hydrogenated Amorphous Silicon-Carbon Alloy Thin Films for Uncooled Microbolometers
MM7, Metal and Semiconductor Contacts (Si, V, Au) to Organic Molecules: The Fullerene Model System
MM8, Silicide/Silicon/Silicide nanowire Heterostructures with FET devices
MM9, Improved Electrical Properties of N-Contacts to N-face GaN for Vertical Light-Emitting Diodes by Laser-Annealing
N1, Preparation of the Red Phosphor Nanoparticle Films for the Application to Silicon Solar Cells
N2, GaAs Nanopillar Photovoltaics Based on Catalyst-Free Patterned Growth
N3, Wafer Bonded GaAs-Sapphire for Photovoltaic Applications via Adhesive Bonding
N4, Thin Film III-V Photovoltaics on Flexible Metal Substrates and Defect Mitigation Strategies
N5, LATE NEWS: Low Atomic Weight Transition Metal Doping of Co-Phased TiO2
N6, Towards >15% Solar Cells on Metal Foils: Heteroepitaxial Crystal Silicon on Alumina
N7, High External Quantum Efficiency and Fill-Factor InGaN-Based Solar Cells Grown by NH
N8, Design Principles for Light-Trapping in Thin Silicon Films with Embedded Dielectric Nanoparticles
N9, Single Crystalline Si Substrate Growth by Lateral Diffusion LPE Technology for PV Applications
New Concepts and Materials for Solar Power Conversion
NN10, Investigation on Activated Charcoal-Carbon Fabrics Composite Electrode Materials for Supercapacitor Application
NN1, Au-Molecule-GaAs Devices with Graphene Barrier Layer
NN2, Gap Mode Plasmonic Cavity with Coupled Organic Gain Medium
NN3, Conductance Statistics of Molecular Junctions Fabricated with a Large Array of Sub-10 nm Single-Grain Au Nanodots Electrodes
NN4, Surface Functionalization of Si Nanowires on SOI Substrates for Biosensing Applications
NN5, Switching Characteristics of Nonvolatile Organic Resistive Memory Devices with Interfacial Oxide Layers Tuned by O2 Plasma Treatment
NN6, Synthesis and Lithium Battery Applications of Nitrogen Doped Graphene Films
NN7, Conformal Coating of Thin Polymer Electrolyte Layer on Nanostructured Electrode Materials for 3D Battery Applications
NN8, Nanostructured Co3O4 Supercapacitors via Solution Precursor Plasma Spray
NN9, Performance of MnO2 Crystallographic Phases in Rechargeable Lithium-Air Oxygen Cathode
O10, Characterization of Ultraviolet LEDs by Electrical Analysis and Laser-Based Failure Analysis Techniques
O1, Fabrication of UV Emitting Devices Using Vertical ZnO Nanorod Arrays on the p-GaN Films
O2, Low-Threshold ZnO Random Laser Diode Realized by Double Heterojunction Structure
O3, ZnMgO-Based Photodetectors for Short Wavelength and Light Polarization Detection
O4, Fabrication and Characterization of 265 nm Light Emitting Diodes on AlN Single Crystal Substrates
O5, Time-Resolved Photoluminescence of AlInN/AlN Multiple Quantum Well Active Regions for Mid-UV Emitters
O6, Enhanced Inter-Band Tunneling by Polarization Engineering in InGaN/GaN Quantum Wells
O7, Effects of Polarization Interface Charge on GaN/SiC Separate Absorption and Multiplication Avalanche Photodiodes
O8, Low-Temperature Growth and Characterization of p-GaN and Graded p-InGaN Layers by MOCVD for Photovoltaic Applications
O9, Carrier Lifetimes and Recombination Phenomena in InGaN/ GaN Quantum Dot and Quantum Well LEDs: A Comparative Study
P1, Memristance and Current-Driven Phase Transition in Multifunctional Binary Oxide Nanodevices
P2, Switching Characteristics and Mechanism of Nano-Scale Memristors Based on Epitaxial ZnO Nano-Islands
P3, Investigation of Multi-Barrier ZnO-Schottky Contacts
P4, Interface Charge Characteristics of HfO
/ZnO Thin Films
P5, Low-Temperature Processed Schottky-Gated Field-Effect Transistors Based on Amorphous Gallium-Indium-Zinc-Oxide
P6, High Pressure Hydrogen Annealing of Indium-Gallium-Zinc Oxide Thin Film Transistors
P7, The Effect of Ga Doping on Bias Stress Stability of ZnO TFT
P8, Electrically Stable Amorphous InGaZnO Thin-Film Transistors and High-Gain Inverters
P9, Growth and Investigation of Hexagonal Zinc Oxide Microdisk Resonators
Q10, Growth Studies on Quaternary AlInGaN Layers for HEMT Application
Q1, ALD Al
Thickness-Dependent Study of AlN/GaN MOS-HEMTs
Q2, Al
Based Etch-Stop Technology for the Gate Recess in N-Polar AlGaN/GaN MIS-HEMTs with Si
Q3, MBE Regrown Ohmic Contacts with Rc of 0.15 ohm-mm in InAlN/GaN High Electron Mobility Transistor
Q4, Pre- and Post-Treatment Investigations of Al Oxide by Atomic Layer Deposition in Schottky Metal/Al Oxide/AlGaN/GaN MOS Diodes
Q5, GaN/Diamond AlGaN/GaN/AlGaN DH-HEMT Produced by Epi-Inverted Wafer Processing
Q6, AlxIn1-xN/GaN Heterostructures Grown by MEMOCVD
Q7, Lateral Confinement of Electrons and Quasi-1D Channels Based Devices
Q8, Polarization-Engineered GaN-Based Heterostructure for Normally-Off High-Electron Mobility Transistors
Q9, Tunneling Current via Dislocations in AlGaN/GaN Schottky Contacts
R10, Growth of III-Sb VECSELs for High-Power Continuous Wave Operation
R1, Improved Performance of Long-Wave Infrared InAs/GaSb Strained Layer Superlattices Detectors by Novel ZnTe Passivation
R2, Strain-Engineered Binary and Ternary Type-II Superlattice Structures and Photodiodes Grown by Metalorganic Chemical Vapor Deposition
R3, Study of Minority Carrier Lifetime and Background Carrier Concentration in GaSb-InAs Strained-Layer Superlattices and Bulk Epitaxial Layers by Optical Modulation Response
R4, Increased Thermophotovoltaic Efficiencies Using a Two Dimensional Photonic Crystal Cavity
R5, Effect of Dislocation Density on Thermal Boundary Conductance across GaSb/GaAs Interfaces
R6, Low Field Electron Transport in Mixed Arsenide Antimonide Quantum-Well Heterostructures
R7, AlGaSb/InAs-Based Staggered Heterojunction Tunnel Diodes
R8, Growth and Characterization of AlInSb Metamorphic Buffers on GaSb and GaAs Substrates for the Growth of MWIR Lasers
R9, Optimization of MBE Growth for the Development of Mid-IR II-VI Quantum Cascade Lasers
S10, LATE NEWS: Two Coherent Limits in Core-Shell Semiconductor Nanowires
S1, Photoluminescence of Chemical Vapor Deposition-Grown Diamond Nanowires
S2, Properties of ErAs and ErSb Nanorods Embedded in High-Index III-V Semiconductors
S3, Dynamic Control of Growth Kinetics for Three-Dimensional Semiconductor Nano-Heterostructures
S4, Structural Characterization of InGaAs Axial Inserts in GaAs Catalyst-Free Nanopillars Grown by Selective-Area MOCVD
S5, Control of III-V Nanowire Epitaxy by Precursor Chemistry
S6, LATE NEWS: Growth and Photoluminescence of GaP/GaNP Core/Shell Nanowires on Si(111) by Gas-Source Molecular Beam Epitaxy (GSMBE)
S7, Effect of Precursor Flow Rates on the Growth of InPSb Nanowires on InP(111)B
S8, Precise Placement and Diameter Control of Catalyst-Free Molecular Beam Epitaxy Grown GaN Nanowires
S9, Synthesis and Fabrication of ZnTe Nanosheet Field Effect Transistors for Photonic Applications
T1, Epitaxial Graphene Formation on Step-Free 4H-SiC(0001)
T2, Effects of Substrate Orientation and Growth Environment on the Structural and Electronic Properties of Epitaxial Graphene on SiC(0001)
T3, High Mobility Epitaxial Graphene on Sapphire via Metal-Free CVD
T4, Study of Epitaxial Graphene on Non-Polar 6H-SiC Faces
T5, Synthesis of a Pillared Graphene Nanostructure: A Three-Dimensional Hybrid Carbon Architecture
T6, Electrochemical Graphane Conversion Using E-beam Evaporated Metals for Catalytic Enhancement
T7, Highly Reproducible Growth of Carbon Nanotubes for Practical Applications in Electronics
T8, Graphene and Carbon Nanotube Growth in Vacuum Systems
U10, Highly Mismatched Oxide Alloy for Photovoltaic and Photoelectrochemical Applications
U1, Synthesis of Ge
Alloy Thin Films Using Ion-Implantation and Pulsed Laser Melting (II-PLM)
U2, Nitrogen Ordering in Ga(NAs) at the Atomic Scale
U3, A Study of MBE Grown InSb
on GaAs for Long-Wavelength IR Applications
U4, Highly Mismatched GaN
Alloys across the Entire Composition Range
U5, Band Edge Optical Transitions in Bulk GaSbN and InAsN Dilute-Nitride Materials
U6, Non-Monotonic Change/Variation in the Seebeck Coefficient of GaAs1-xNx Thin Film Thermoelectrics Due to the Addition of N (x = 0.5% to 1.5%)
U7, GaN
: Extremely Mismatched Alloys
U8, Electrical and Thermal Properties of InGaBi
U9, Incorporation of Bismuth into GaAs and InAs Grown by Molecular-Beam Epitaxy
V1, Alkanethiol Island Formation on Single Crystal Zinc Oxide Surfaces
V2, Improved High Efficiency Organic Solar Cells via Incorporation of a Conjugated Polyelectrolyte Interlayer
V3, A Systematic Approach to Solvent Selection Based on Cohesive Energy Densities in a Molecular Bulk Heterojunction System
V4, Structure-Function-Property Relationships of Diketopyrrolopyrrole-Based Materials for Applications in Solution Processed Organic Solar Cells
V5, ALD-TiO2 to Enable Si as a Corrosion Resistant Photoelectrode for Water Oxidation and in Photoelectrochemical Solar Cells
V6, Performance Optimization of Branched Nanowire Heterostructure-Based Photoelectrochemical Cells for Water Solar Splitting
V7, Layer-By-Layer Assembly of Light Harvesting Arrays for Molecular Based Solar Cells
V8, Low Temperature Fabrication of Hybrid Carbon Nanotube Gel as a Counter Electrode for Efficient Dye Sensitized Solar Cells
W10, LATE NEWS: Charge and Mobility Enhancements in Graded In-Polar InAlN/AlN/GaN Hetero-Junctions
W1, Shape Transformation of Nanoporous GaN by Annealing: Buried Cavities and Nanomembranes
W2, Bulk GaN Growth on GaN Seeds of Varying Orientations in Supercritical Basic Ammonia
W3, Large-Area, Free Standing GaN by an Novel Nanoetching Process and Substrate Recycling
W4, Effect of Strain on Effective Masses in GaN and AlN
W5, Quasi Equilibrium Crystal Shapes and Kinetic Wulff Plots of Gallium Nitride Grown by Hydride Vapor Phase Epitaxy
In Situ
Stress Measurements during GaN Growth on Ion Implanted AlN/Si Substrates
W7, Effect of Indium Surfactant on N-Polar GaN Epilayers Grown by Metalorganic Chemical Vapor Deposition
W8, Schottky Barrier Height and Interface Chemistry for Metals Contacted to Low Dislocation Density AlGaN Grown on C-Oriented AlN Wafers
W9, Generation Mechanism of Threading Dislocations in Heteroepitaxial Growth of 2H-AlN on 6H-SiC (0001) Substrates
X10, Epitaxial LaAlO
Heterostructures by Atomic Layer Deposition
X1, Gate First In
MOSFETs with In-Situ Channel Surface Cleaning
X2, Structure of Electronic Defects near the SiC/SiO2 Interface
X3, Interface State Density for Positive Band Offset Dielectrics (Al2O3, SiO2) on GaN
X4, Comparison of Metal Deposition Methods by CV Analysis of ALD Al
on In
X5, Passivation Effects of ALD Oxides on Self-Aligned In
As/InAs/InP Vertical Tunnel FETs
X6, Influence of Trimethylaluminium (TMA) Exposure on the Growth and Electrical Characteristics of HfO
As Gate Stacks
X7, Investigation of Electrode Roughness and High-K Dielectric Barrier on Metal-Insulator-Metal Tunnel Diode Operation
X9, Solution-Processed Zirconium Oxide and Integration with Zinc-Tin Oxide Thin-Film Transistors
Y10, Hydrogen-Related Cathodoluminescence in Mg-Doped GaN
Y1, The Influence of Al Composition on AlGaN Point Defect Incorporation
Y2, Hybrid Functional Calculations of DX Centers in AlN, GaN and AlGaN
Y3, Deep Traps in M-Plane GaN Grown by Ammonia MBE
Y4, Intrinsic Surface States and Dislocations at GaN(10-10) Surfaces Investigated by Scanning Tunneling Microscopy
Y5, Defect Characterization of InGaN Layer by Deep Level Transient and Optical Spectroscopies
Y6, Misfit Dislocation Formation in Partially Strain-Relaxed (11-22) Semipolar InGaN
Y7, Observation of
-Plane Slip and Relaxation Orthogonal to the Projected
-Direction in (20-21) InGaN/GaN Partially Relaxed Layers
Y8, Stress Mapping Analysis by Ray Tracing (SMART): A New Technique for Residual Strain/Stress Measurement of Single Crystal Material Using Synchrotron White Beam
Y9, Charged Basal Stacking Fault (BSF) Scattering in Wide Band-Gap Semiconductors
Z10, Ternary InxGa1-xAs Nanowires on Silicon Substrates: 1D Heterogeneous Epitaxy, Bandgap Engineering, and Photovoltaics
Z1, Growth of Epitaxially-Embedded ErAs Films in GaAs
Z2, Improved Conductivity of GaAs-Based Tunnel Junctions Containing ErAs Nanostructures via Compositional Grading
Z3, Photoluminescence from the Direct Bandgap of Ge
Alloys Grown by Molecular Beam Epitaxy
Z4, Fabrication and Characterization of Whispering Gallery Mode (WGM) Microdisk Resonator Based on Epitaxially Grown GeSn
Z5, Raman Study of Strained Ge1-xSnx Alloys
Z6, Study of Molecular Beam Epitaxial Grown HgCdSe for Infrared Applications
Z7, XMCD Measurement of Molecular Beam Epitaxy γ'-Fe
N Thin Films on LaAlO
(100) and MgO(100) Substrates
Z8, Sb Surfactant Use during GaInP and GaInAs Strain Relaxation
Z9, Sensitivity of Strained and Unstrained Structure Growth on GaAs (111)B
Questions about ProgramMaster? Contact


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Richard Scott Proehl
Position: WR
Height: 6-0 Weight: 190 lbs.
Born: March 7, 1968 in Bronx, NY
High School: Hillsborough
College: Wake Forest (school history) (Proehl college stats)
Drafted by the Phoenix Cardinals in the 3rd round (58th overall) of the 1990 NFL Draft.
Weighted Career AV (100-95-...): 57 (1057th overall since 1950)
Other SR Links: College Football at Sports-Reference.com
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subset: commoncrawl


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Giants face challenge in A's resurgent Gray
Road warrior Bumgarner looking to rebound after two tough starts
If the Giants hope to stay ahead of the curve Tuesday, they'll need to lay off Sonny Gray's.
Gray's curveball was back in its dominant form Thursday against Toronto, as the A's right-hander delivered his best start in more than a month.
"His curveball was disgusting tonight," A's catcher Stephen Vogt said Thursday. "It was back to the Sonny Gray that I've known for the last year and a half. He's got one of the best curveballs in baseball, and he had it tonight."
Gray struck out five and allowed just one run in seven innings against Toronto -- his first outing allowing fewer than two runs since May 22.
Gray had gone 5-1 with a 1.99 ERA in his first 10 starts of the season, then declined to 3-2 with a 4.81 ERA over his last seven. Overall, he's 8-3 with a 3.08 ERA on the year.
His success -- as he displayed Thursday -- could rely on how well his curveball is working.
"That was the idea, to really get that [curveball] going again," Gray said. "I think the last five or six starts it's been OK, but it hasn't been a big factor. We did some things a little different this week and I was able to find that again."
Gray will match up against another starter who is looking to regain his form.
Giants ace Madison Bumgarner is coming off his worst two starts of the season, allowing nine earned runs and 15 hits in 11 innings in those starts.
One factor that could work in Bumgarner's favor: He's found success on the road, going 6-1 with a 1.32 ERA in nine away starts.
Giants: Slumping Crawford remaining in lineup
Manager Bruce Bochy thinks Brandon Crawford could use a break. He just isn't being afforded the chance to give him one, not with the Giants' weak bench and Crawford's strong defensive play, which helped preserve the team's victory against the Padres on Saturday.
Bochy thinks Crawford's hands have been too high on the bat, and he told his shortstop Sunday that he believes a break would be beneficial.
"He's winning games for us," Bochy said. "We need him in the lineup."
Crawford, who's started 82 of the team's 90 games at shortstop, is just 6-for-his-last-42 (.142) at the plate and has hit .091 (1-for-11) with three walks in the Giants' last four games.
A's: Moss back in lineup as DH
Brandon Moss returned to the A's lineup Monday as the designated hitter for the series opener against the Giants, three days after he sprained his left ankle.
Swelling in the ankle initially did not subside as Moss hoped it would, but an MRI on Sunday revealed no structural damage. Manager Bob Melvin said the lefty slugger was feeling much better Monday.
"Big-time improvements today," Melvin said before the game. "We'll limit him to the DH role today, even though I'm sure he wants to get out on the field."
Moss rolled the ankle over during Friday's game against Toronto while trying to get out of the batter's box on a ground ball.
Vogt's versatility continued to come in handy in Moss' defensive absence -- he recently has seen regular time in right field, and Monday he got his third career start at first base.
Worth noting
• The A's are 8-1 in Interleague Play this season, best in the Majors ahead of the Giants (6-3).
• Six A's players were named to the American League All-Star team Sunday, the franchise's most since 1975.
• The Giants are 35-14 when they hit at least one homer and are 14-26 when they don't.
Michael Lananna is an associate reporter for MLB.com. This story was not subject to the approval of Major League Baseball or its clubs.


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Offers exclude clearance items, prior purchases, pending deliveries, sales tax, shipping and delivery, gift cards and Gold Protection Plan.
The Details
Bennett Three-Cushion Roll-Arm Sofas
Item#: bennett RA3C
Seating Area:
- 20-7883 86" Sofa: 68"w × 21"d
- 20-7876 94" Sofa: 76"w × 21"d
- Seat Back: 15"h
- Seat Height (floor to top of cushion): 22"
- Arm Height: 25"
Composition and Construction
Engineered Hardwood frame construction allows for greater durability and strength. Mortise and tenon joints have replaced traditional dowel construction used in frame construction. The mortise (hole or slot) is cut into one member and the tenon or tongue from the adjoining piece fits tightly so that, when glued, these joints act as if the wood has grown together. This method of interlocking joinery provides greater stability with fewer joints. Frames are constructed of 7-ply engineered hardwood panels for increased strength and durability. Frames are glued and stapled.
Removable legs
Heavy gauge coil spring unit coils are linked together and attached to a heavy gauge border wire for consistency and longevity. Individualized coil seating units function independently of the other providing individual seating comfort for even support and weight distribution. Each spring is oven tempered to provide greater strength and durability.
The comfort soft seat cushion is designed and constructed to achieve a softer and supportive feel. A dense polyurethane foam core is laminated both top and bottom with a layer of soft foam and wrapped with polyester fiber to provide a comfortable seat and is encased in a non-woven ticking.
Loose back pillows are filled with a generous amount of polyester fiber. Non-woven ticking allows air to escape during use. The pillows are constructed with horizontal channels sewn in which minimizes shifting and settling.
Additional Options for this Upholstery product available in our Design Centers
Cushion Fill
From full support to featherblend and everything in between - we offer a diverse selection of cushion fill options to ensure you always have the best seat in the house.
Choose from among our kickpleat, decorative pleat, half skirt, shirred skirt and waterfall skirt options.
We offer different leg heights for the Bennett frame styles - so if you love the silhouette of a particular frame but the designer in you wishes for different footing, your wish may be granted.
Trim can take a sofa, chair or ottoman up a venerable style notch. From rope braid and fringe to decorative ribbon and nail heads, the options are only as limited as your imagination.
Arm Pillows
Select styles of our upholstery frames come standard with arm pillows. Choose a special trim to make this feature stand out on your frame.
A variety of wood finishes are available to complement any fabric or leather application you choose.
Back Pillow
Tight back, loose back, semi-attached back. Choose the one that fits your style posture.


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Description:2 x HP 250GB Entry Level (ETY) Hot-Plug Serial ATA (SATA) 3.0Gb/s 7200 RPM 3.5-inch form factor 1.0 inch highIn HP Hot-Plug Hard Drive tray (as pictured)For G1-G7 Proliant SATA ServersGenuine HP serial number and firmwarePart Number(s) Option Part# 571230-B21 Spare Part# 571516-001 Assembly Part# 484429-001 Model# GB0250EAFYK
Overview:A variety of tested HP-qualified SMART capable SATA Hard Drives offering data integrity and availability in hot-pluggable models. HP SATA 7200 rpm Hard Drives provide entry-level performance and high capacity for select Proliant servers. Before final certification all HP Serial-ATA hard drives are optimized for compatibility and functionality including support of SMART and HP System Insight Manager. Specifications: CategoryProliant HardDrive Sub-Category7.2K GenerationSATA Part NumberGB0250EAFYK-2Pack Products ID462252 TypeHard Drive - Hot-Swap Form Factor3.5 inches x 1/3H Capacity250GB Interface TypeSerial ATA Connector22-position Serial ATA (SATA) plug Data Transfer Rate3GB/s Average Seek Time9ms Rotational Speed7200RPM Dimensions (LxWxH)7.25 x 4.36 x 1.04 in [ Replacement Video ]


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Custom cars, combat and more are revealed in depth in this trailer for Mad Max.
Views: 29,446 | Posted: 04/23/2015
The crew behind the second coming of King's Quest shares their enthusiasm and vision in this developer diary.
Views: 2,916 | Posted: 04/21/2015
Take a mini tour at FreeStyle Games and get an inside look at what it takes to bring about the rebirth of Guitar Hero.
Views: 2,627 | Posted: 04/21/2015
The Consequence leads right where The Assignment left off as the new chapters of Evil Within being the story to its conclusion.
Views: 9,950 | Posted: 04/21/2015
Learn to master Scorpion's variations with an in-depth look at his moves in Mortal Kombat X.
Views: 17,696 | Posted: 04/20/2015
Armed with Grendel's severed arm and his folding chair, Beowulf fights to restore his faded glory in Skullgirls Encore.
Views: 4,665 | Posted: 04/17/2015
Get a sneak-peek at Robo-Fortune, the final character slated for Skullgirls Encore.
Views: 2,065 | Posted: 04/17/2015
One Piece: Pirate Warriors 3 offers more enemies and fast-paced action that ever before!
Views: 7,568 | Posted: 04/16/2015
Challenge powerful beasts as the King of the Monsters in Godzilla!
Views: 22,152 | Posted: 04/16/2015
A huge roster of characters coming from the most famous mangas and animes around gather for epic battles in J-Stars Victory VS+!
Views: 4,549 | Posted: 04/16/2015
Week of
May. 17


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Roll Over Image to Zoom
Ryder Metal Bookcase
No longer available
- Overview
A cool combo of metal and wood makes this bookcase sturdy and stylish. There's plenty of room on its three wide shelves for books, magazines, media and more.
- 46.25" wide x 14" deep x 29.75" high
- Expertly crafted of a warm industrial metal frame and wood planks finished in our Tuscan stain.
- Frame is detailed with metal rivets for an industrial look and feel.
Make sure it fits! Use our interactive room planner to design your floor plan.
- Dimensions + Care
- Overall: 46.25" wide x 14" deep x 29.75" high
- Shelf Space (2): 46.25" wide x 14" deep
- Clearance Under Bookcase: 3"
- Dust with a soft, dry cloth.
- To protect the finish, do not apply abrasives or household cleaners.
- Shipping Info
- Please allow approximately 5-7 business days for delivery. Delivery estimate includes monogrammed and gift-wrapped items.
- Final Sale
Final-sale items, identified by a price ending in $0.99, cannot be returned. Once placed, your order for any final sale items cannot be canceled.


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Since 1981
Packaging Details: 60 Cores Per Box
Availability: Ships same day or next business day ( Shipping availability refers to time before item is shipped, not time once shipped )
Shipping Weight: 4lb.
1.625" Wide 3" Inner Diameter Cardboard Label Cores to fit 1.5" wide labels including the liner on both sides. These cardboard label cores have a 0.125" thickness, come packed 60 Cores Per Box, and are available for immediate shipment.


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Road-weary Braves play host to improved Dodgers
Maholm looks to rebound in duel with Ryu; Heyward back in action
Following a lengthy up-and-down road trip, the National League East-leading Braves will gladly return home to Turner Field on Friday as they open a three-game series against the last-place Dodgers.
Just one week ago, this would have seemed like an entirely different matchup.
Yet with Atlanta dropping five of the final six games on its 10-game road trip and the Dodgers playing well in the wake of their eight-game losing streak, both clubs are suddenly trending in opposite directions.
The Braves started off strong on their trip, winning three of the first four games before sputtering out on the back end. On Friday, they will turn to starter Paul Maholm, who followed the same pattern as the rest of his team during that trip.
Maholm earned his fourth win of the season with an impressive performance at Cincinnati on May 6, but was battered around in San Francisco on Saturday. The southpaw was tagged for six runs on eight hits over just 4 1/3 innings while throwing a season-low 86 pitches before exiting the eventual 10-1 loss.
"Pauly usually goes through the lineup rather quickly with a limited amount of pitches," said Braves bench coach Carlos Tosca, who was filling in Saturday for Fredi Gonzalez while the skipper attended his daughter's high school graduation. "His pitch count was up a little bit with that amount of innings. He always competes. But he wasn't the Maholm we're used to knowing."
As for the Dodgers, they will counter with Hyun-Jin Ryu, who played a key role Saturday against Miami in helping the club snap its eight-game losing streak. The lefty conceded just one run over 6 2/3 innings, while throwing a career-high 114 pitches.
"He's a master craftsman, the way he changes speeds," Dodgers manager Don Mattingly said. "He's fun to watch."
Ryu, signed out of Korea to a six-year, $36 million contract in December, has pitched at least six innings in each of his first eight Major League starts. He enters Friday's series opener with a 4-2 record to go along with a 3.40 ERA.
"Six or seven innings should be the norm for a starting pitcher," Ryu said. "That's what I considered even back in Korea."
Dodgers: Kemp streaking at the plate
Outfielder Matt Kemp didn't wait long to extend his hitting streak on Wednesday. He hit a first-inning double, which ran the streak to 14 games. He later added a single to finish the day 2-for-4.
Kemp is hitting .328 (19-for-58) during the stretch, though 16 of the hits are singles. For the season, he is hitting .282 with just one home run and 15 RBIs.
Braves: Heyward activated for opener
The Braves activated Jason Heyward from the disabled list and placed him in the starting lineup for Friday night's opener.
To create a roster spot for Heyward, the club placed right-handed reliever Jordan Walden on the 15-day disabled list with right shoulder inflammation.
Heyward has been sidelined since undergoing an emergency appendectomy on April 22 in Denver.
Worth noting
• Maholm is 1-5 with a 4.91 ERA in nine career starts against the Dodgers.
Paul Casella is a reporter for MLB.com. This story was not subject to the approval of Major League Baseball or its clubs.


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Quick Links
Shop All Jewelry
A custom made gold vermeil 3 name necklace is the perfect handcrafted piece of jewelry. You can add three names or meaningful words to personalize this necklace which is available in a 16" or 18" length rolo chain. Each name is separated by a length of chain allowing the necklace to lay centered on your neck. The shine of the gold plated vermeil against the more delicate chain makes for a special look unique to you. Perfect gift for mom or grandma!
Eve's Addiction.com wants you to be a happy customer. We want you to be completely satisfied with the sterling silver jewelry that you receive from us, as we only sell high quality silver and cubic zirconia cz jewelry. We do understand that you may not like your purchase for some reason.
You may return or exchange your jewelry within 60 days of purchase if you are not satisfied with it. The jewelry must be returned in its original condition for a refund or exchange. Engraved, personalized, photo, monogram, name and initial, chocolate and clearance items are not returnable or exchangeable.


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Spring Break: NO Plan II Admission Information Session
Mon, March 15, 2010
Littlefield Fountain, UT Austin
Registration required; Reserve your spot today for sessions which resume next week.
Reserve your spot at a Plan II information session today:
Registration required: On-line Plan II Information Session registration.
The last session of the spring 2010 semester is Friday, April 30, 2010.
Plan II Honors offers a one-hour information session beginning at 10:00 a.m. at WC Hogg 4.104, the Plan II Honors office (Hogg Heaven). At the end of the first hour of the information session, current Plan II student ambassadors arrive to escort prospective students to a Plan II World Literature class from 11:00 a.m. to 11:50 a.m.
While prosective students attend the class, parents are invited to a second hour of information and Q&A.
See VISIT PLAN II for more dates, parking maps and maps to the WC Hogg Building, and information on dorm tours, general UT informaiton sessions and other major/college and honors program information sessions.


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"A Mom's Ultimate Book of Lists"
Melissa Montana talks with Michelle LaRowe, Author of "A Mom's Ultimate Book of Lists", about what you do and don't need when someone is preparing for a new baby around the house.
Posted on Dec 28, 2010 | Conversations | Melissa Montana
No comments are available at this time. Maybe you should start the conversation!


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All Categories
- Barnstable-Brown
- Bomhard Theatre
- Churchill Downs
- Commonwealth Stadium - KY
- EKU Center for the Performing Arts
- Expo Five
- Freedom Hall-KY
- Headliners Music Hall
- Horseshoe Southern Indiana
- Iroquois Amphitheatre
- Keeneland
- Kentucky Center - Brown Theatre
- Kentucky Center - Whitney Hall
- Kentucky Exposition Center
- KFC Yum Center
- more
- Lexington Opera House
- Louisville Palace
- Mercury Ballroom
- Papa Johns Cardinal Stadium
- Rupp Arena
- Singletary Center of Arts
- Waterfront Park
- Whitaker Bank Ballpark
- fewer
We're sorry, but we currently have no tickets available for this event.
Check out our full selection of tickets or sign up to be notified when tickets for this event are available.
Lexington Center Ticket Information
Have you heard a rumor that an event at Lexington Center is sold-out? At Vividseats.com we have a large selection of tickets to all events at Lexington Center and we sell them at a discount! Don't believe us? View the upcoming schedule of Lexington Center and click on "Find Your Seats" and you will find the tickets you want to fit almost any budget. In addition to providing tickets to Lexington Center events, we also information such as seating charts, venue information, maps, and directions. When buying tickets for an event at Lexington Center always use Vividseats.com.


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by Maria Adams, MS, MPH, RD
Since the amount of calories you need will vary depending on age, weight, and physical activity among other things, talk with your doctor about a calorie plan that is right for you.
Along with talking about the amount of calories and types of foods you need to consume to achieve a well-balanced, healthy diet during pregnancy, your doctor may also discuss the kinds of nutrients you will need. There are some key nutrients, such as folic acid and iron, which deserve extra attention during pregnancy. Many women may also benefit from a vitamin supplement.
Women who are pregnant or may become pregnant should consume 600 micrograms (mcg) of folic acid, or folate, every day. This vitamin is most important during the first several weeks of pregnancy, often before a woman even knows she is pregnant. Getting enough folic acid can help prevent neural tube defects, such as spina bifida. Taking this vitamin may also help prevent other birth defects like cleft lip and congenital heart disease.
You can meet this requirement by eating a variety of foods rich in folic acid. For extra insurance, you may also want to take a folic acid supplement before you become pregnant and through your first trimester. (If you are taking a prenatal vitamin that contains folate, you do not need a separate folic acid supplement.)
Foods rich in folic acid include:
Iron is a mineral that helps red blood cells transport oxygen around the body. The recommended amount of iron for pregnant women is 27 milligrams (mg). Not getting enough of this mineral can lead to iron-deficiency anemia and pregnancy complications.
Good sources of iron include:
Eating vitamin C -rich foods along with iron-containing foods can help with iron absorption. On the other hand, drinking tea or coffee at the same time can inhibit iron absorption.
Because it can be difficult to get all the iron you need from food alone, it is often recommended that all pregnant women take a prenatal vitamin that contains the necessary iron amount. Talk to your physician about iron supplementation. Taking too much iron can be toxic.
During pregnancy you also need calcium. When you do not consume enough calcium, your body takes it from your bones, increasing your risk of osteoporosis later in life.
Good sources of calcium include:
If you do not eat dairy products or enough foods fortified with calcium, talk to your doctor about calcium and vitamin D supplementation. Vitamin D is necessary for the body to absorb and use the calcium.
During pregnancy the body becomes extra efficient at absorbing the nutrients in food. If you are eating a variety of healthful foods every day, you may not need a supplement. However, many women may benefit from taking a prenatal multivitamin. Some may need only an iron or folic acid supplement. Talk to your doctor about your eating and lifestyle habits to determine if you should take a vitamin supplement.
No safe amount of alcohol has been shown in pregnancy. Therefore, it is recommended that you abstain from drinking until after your pregnancy.
Most experts agree that having one or two cups of coffee or tea per day is fine during pregnancy. There is some research has linked high intakes of caffeine (more than 300 mg per day) with greater difficulty to conceive and a higher rate of miscarriages. One cup of brewed coffee contains about 135 mg of caffeine, one shot of espresso contains about 35 mg, one brewed tea bag contains about 50 mg, and a 16-ounce serving of cola has about 50 mg. Talk to your doctor about how much caffeine you drink.
Seafood is an excellent source of omega-3 fatty acids , which are essential for the proper brain development of the fetus. Therefore, it is recommended that pregnant women include seafood, particularly fatty fish such as salmon, as a regular part of their diet.
Some seafood contains high amounts of mercury, a contaminant that can be harmful to the developing baby. Fish that should be avoided due to their high mercury content include: tilefish, king mackerel, swordfish, albacore tuna, and shark.
Good choices include salmon, sardines, catfish, canned light tuna, and shrimp. These are both high in omega-3 fatty acids and low in mercury.
To avoid the risk of foodborne illness, which could harm you and your developing baby, it is important to pay close attention to food safety during pregnancy. Here are some general guidelines:
Most artificial sweeteners are considered safe for use in moderation during pregnancy, including: acesulfame K (Sunett), aspartame (NutraSweet or Equal), and sucralose (Splenda). But more research is needed on saccharin (Sweet'N Low) and stevia, these should, therefore, be avoided by pregnant women.
Staying well-hydrated is important for the health of you and your baby, so try to drink at least 6-8 glasses of water a day. Other beverages, such as juice and soda, also contribute to hydration, but tend to be high in calories and low in nutritional value.
US Department of Agriculture
US Office on Women's Health
Dietitians of Canada
Public Health Agency of Canada
Artificial sweeteners and pregnancy. American Pregnancy Association website. Available at: http://americanpregnancy.org/pregnancyhealth/artificialsweetener.html. Updated January 2013. Accessed August 27, 2013.
Health & nutrition for pregnant & breastfeeding women. US Department of Agriculture Choose My Plate website. Available at: http://www.choosemyplate.gov/mypyramidmoms/index.html. Accessed August 27, 2013.
Nutrition in pregnancy. EBSCO DynaMed website. Available at: http://www.ebscohost.com/dynamed.ebscohost.com/about/about-us. Updated August 20, 2013. Accessed August 27, 2013.
Position of the American Dietetic Association: nutrition and lifestyle for a healthy pregnancy outcome. J Am Diet Assoc. 2002;102:1479-1490.
Pregnancy. US Office on Women's Health website. Available at: http://www.womenshealth.gov/pregnancy. Updated September 27, 2010. Accessed August 27, 2013.
The caffeine corner: products ranked by amount. Centers for Science in the Public Interest website. Available at: http://www.cspinet.org/reports/caffeine.pdf. Accessed August 27, 2013.
USDA national nutrient database for standard reference. US Department of Agriculture website. Available at: http://ndb.nal.usda.gov. Accessed August 27, 2013.
Vitamins and minerals during pregnancy. March of Dimes website. Available at: http://www.marchofdimes.com/pregnancy/vitamins-and-minerals-during-pregnancy.aspx. Updated March 2009. Accessed August 27, 2013.
11/6/2009 DynaMed's Systematic Literature Surveillance https://dynamed.ebscohost.com/about/about-us: Christian P, Stewart CP, LeClerq SC, et al. Antenatal and postnatal iron supplementation and childhood mortality in rural Nepal: a prospective follow-up in a randomized, controlled community trial. Am J Epidemiol. 2009;170:1127-1136.
Christian P, Khatry SK, Katz J, et al. Effects of alternative maternal micronutrient supplements on low birth weight in rural Nepal: double blind randomised community trial. BMJ. 2003;326(7389):571.
Last reviewed September 2013 by Dianne Scheinberg Rishikof MS, RD, LDN
Please be aware that this information is provided to supplement the care provided by your physician. It is neither intended nor implied to be a substitute for professional medical advice. CALL YOUR HEALTHCARE PROVIDER IMMEDIATELY IF YOU THINK YOU MAY HAVE A MEDICAL EMERGENCY. Always seek the advice of your physician or other qualified health provider prior to starting any new treatment or with any questions you may have regarding a medical condition.
Copyright © EBSCO Publishing. All rights reserved.


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this wiki
Antioch Peverell | |
Biographical information | |
Born | |
Died |
Prior to 18 May, 1291 |
Blood status | |
Title(s) |
Master of the Elder Wand |
Physical information | |
Species | |
Gender |
Male |
Hair colour |
Dark |
Skin colour |
White |
Family information | |
Family members |
Magical characteristics | |
Wand | |
Affiliation | |
Loyalty |
Antioch Peverell (fl. 1214) was the oldest of the Peverell brothers. Antioch, like his brothers, was skilled in the magical arts, but personally was described as being a "combative man". Antioch and his brothers were the inspiration for the The Tale of the Three Brothers and thus the original masters of the Deathly Hallows. Antioch was said to have possessed the Elder Wand, though the exact circumstances of this are unknown.
Meeting Death
In the The Tale of the Three Brothers, the Peverell brothers are described as having received the Hallows from Death himself, after using their magical talents to cross a treacherous river that would have assuredly killed them otherwise, and Antioch, for his prize, asked for "a wand more powerful than any other in existence: a wand that must always win duels for its owner, a wand worthy of a wizard who had conquered Death!" and so Death crossed to an elder tree on the banks of the river, made a wand from a branch, and gave it to Antioch.
Ownership of the Elder Wand and Death
Later, the three brothers separated. Antioch travelled towards a distant village, and met a wizard with whom he had a quarrel. With the Elder Wand as his weapon, Antioch easily won the duel that followed. Leaving his enemy dead, Antioch lodged in an inn to celebrate, where he boasted loudly of the powerful wand he had snatched "from Death himself", and of how it made him invincible. That night, as Antioch slept, another wizard crept upon him, stole the wand, and slit his throat.
Antioch was a distant relative of Tom Marvolo Riddle and Harry Potter, as each was descended from one of his brothers, Cadmus Peverell and Ignotus Peverell respectively.
Personality and traits
Antioch was a man who desired beyond everything to be an all powerful wizard. Although he was already very powerful, he was not satisfied and immediately took his chance to gain a wand from Death that would make him unbeatable. His desire for such power made him blind to Death's true intentions however and he later proved to be very self-indulgent and weak willed when he boasted about how powerful his new wand was to the public. Antioch was very irresponsible and unwise in this manner, consuming a dangerous amount of alcohol then leaving his wand and himself unprotected on the night of his murder. Antioch's recklessness and egotism caused him to be the first of the Peverell brothers to fall into Death's cunning hands.Magical abilities and skills
- Transfiguration: Antioch and his brothers were capable of using Conjuration, a highly advanced form of magic to create a bridge stable enough to walk across.
- Martial magic: Antioch was capable of killing an opponent in a duel and coming out of the battle unscathed, though this was mostly due to his wielding of the Elder Wand.
- Owner of the Elder Wand: Antioch was the first wizard to own and tame the Elder Wand, the most powerful wand ever made. However, his nature was not that of a person worthy of possessing such a wand. Albus Dumbledore and Harry Potter were qualified to own the Elder Wand because they would never use it for boasting or murder. Antioch had done both.
- Magical manufacturer (possibly): No one knows for certain how Antioch came to posses the Elder Wand. Although The Tales of Beedle the Bard claim that the wand was given to Antioch by Death, others, such as Albus Dumbledore, theorized that Antioch created the wand himself.
His name may be a reference to the city of Antioch, a chief centre of early Christianity.
Behind the scenes
- Albus Dumbledore believed it was more likely that the Deathly Hallows were invented by the Peverell brothers themselves, which would make Antioch the creator of the Elder Wand. Whether the account of his death from The Tales of Beedle the Bard is accurate is unknown. However, it is likely that it is just fictionalised by Beedle.
- In the novel and film his killer slits his throat, but in the consoles versions of the video game, the thief kills him with the Killing Curse. In LEGO Harry Potter: Years 5-7 however, he was snatched by Death along with his brothers.
- Harry Potter and the Deathly Hallows (First mentioned)
- Harry Potter and the Deathly Hallows: Part 1 (First appearance) (Appears in flashback(s))
- Harry Potter and the Deathly Hallows: Part 1 (video game) (Appears in flashback(s))
- LEGO Harry Potter: Years 5-7
- The Tales of Beedle the Bard
Notes and references


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Fungal arthritis is infection of a joint by a fungus.
Mycotic arthritis
Fungal arthritis, also called mycotic arthritis, is a very rare condition. It can be caused by any of the invasive types of fungi. These organisms may affect bone or joint tissue. One or more joints may be affected, most often the large, weight-bearing joints, especially the knees.
Conditions that can cause fungal arthritis include:
The infection sometimes occurs as a result of an infection in another organ such as the lungs, and tends to get worse very slowly. The large joints are most often affected. People with weakened immune systems who travel or live in endemic areas are more susceptible to most causes of fungal arthritis.
What happens depends on the underlying cause of the infection and the patient's overall health. A weakened immune system, cancer, and certain medications can affect the outcome.
Call for an appointment with your health care provider if you have any symptoms of fungal arthritis.
Joint damage can occur if the infection is not treated promptly.
The goal of treatment is to cure the infection using antifungal drugs. The most commonly used antifungal drugs are amphotericin B or medications in the azole family (fluconazole, ketoconazole, or itraconazole).
Chronic or advanced bone or joint infection may require surgery (debridement) to remove the infected tissue.
Thorough treatment of fungal infections elsewhere in the body may help prevent fungal arthritis.
Espinoza LR. Infections of bursae, joints, and bones. In: Goldman L, Ausiello D, eds. Cecil Medicine. 23rd ed. Philadelphia, Pa: Saunders Elsevier; 2007: chap 293.
Ohl CA. Infectious arthritis of native joints. In: Mandell GL, Bennett JE, Dolin R, eds. Principles and Practice of Infectious Diseases. 7th ed. Philadelphia, Pa: Churchill Livingstone Elsevier; 2009: chap 102.


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Tuesday, August 12, 2014
Recently, Bunny, the children, and I spent a week at the lake celebrating his upcoming retirement. After 41 years of working in accounting, Bunny is calling it quits and is getting ready to sit back and enjoy life. What? I keep telling him days get really long at home so he needs to have a plan, get a part-time job, or spend some time making a bucket list of things he wants to do. Well, thats what I thought until I read a book at the lake about Moses and Bertha Cone and their Blowing Rock Manor. The book tells the story of how a child from immigrant parents prospered and established himself as a true American. Moses Cone was one of North Carolinas leading textile manufacturers and was the son of German immigrants. Cone became a prosperous, powerful, well-liked businessman, who wrapped himself in American Imagery. During the 1880s and 1890s immigration from central and Eastern Europe soared and many Americans felt that their way of life was being threatened by immigrant invasion.
People feared that aliens would take American jobs and taint the countrys social and religious institutions. Patriotism and people reveled in the nations past and celebrated their personal roots in America. At that time, Moses and Bertha began to distance themselves from their immigrant history and adopted the ways of old stock Americans. Around 1900 the couple began building their dream estate, Flat Rock, which they hoped would make them safe from questions about their national origins. Flat Rock consisted of 3,500 acres and was modeled somewhat after the Biltmore Estates in Ashville. The colonial styled house consisted of 13,000 square feet, 23 rooms, and an interior that reflected the powerful image the Cones wanted to present to the world. Moses and Bertha cared deeply about what others thought of them, were very status conscious, and surrounded themselves with great possessions. The estate had over 22 miles of carriage roads, several ponds, and spectacular mountain views. For enjoyment, Cone grew apples, and other fruits, and completed some philanthropic projects such as building a school for the children of his employees. With the completion of his Flat Rock Estate, Cone had made it to the summit, socially, aesthetically, and financially. He was enjoying life and the view from the top of the mountain. But unfortunately only eight years after the completion of Flat Rock Manor, Moses Cone died at the young age of 51. Cone left a grieving wife who continued to oversee the estate until her death in 1947. Since the Cones had no children, the renowned Flat Rock Manor was donated to the National Park System. In one sense, The Moses Cone National Park is a symbol of a familys great success. Parents arriving in the country as poor peddlers produce a son who would become one of North Carolinas greatest manufacturers and the owner of a premier country estate. On the other hand, some 67 years after Berthas death, fewer than 650 of the 32,000 apple trees remain and the 500 acres of pastures have reverted to forest. Today the recreational park and craft sales center is a far cry from the exquisite working estate that Moses and Bertha Cone built in 1900. As I considered the life of the Cones; their wealth, status, and possessions, and how it was so short-lived, I re-evaluated Bunnys desire to sit back and enjoy life.
When asked for his bucket list, I was given a simple list of three things. The first thing Bunny hopes to do in retirement is not have to hurry. After 41 years of getting up and being at work by 8 a.m. he intends to sleep a bit later and enjoy his mornings. His next goal is to spend more time with family and friends. For the first time in years, Bunny bought a hunting and fishing license and enjoyed fishing with the children last week at the lake. The final point on his list is to clean out his shop and begin some serious wood working projects. Indeed it sounds like an unpretentious bucket list for an uncomplicated retirement. Now on the other hand, if I ever decide to really retire, my bucket list will probably include a few more active goals. For instance, I want to go to every vineyard in Georgia, North Carolina, and Virginia. I intend to take my children back to Disney World, travel to New York, Alaska, out west, and a few other places. I may finally kayak down Black River, and plant a garden. We used to camp years ago and I hope to go camping sometime, and maybe take up bicycle riding again.
I sure hope Bunny enjoys some simple living while I continue to work because when I retire, I have things to do and places to go and I want him to go with me. But for now, I wish him a long life and wonderful retirement. Bunny may not have acquired great wealth and possessions like the Cones, but he has wonderful children and grandchildren to pass along his lifes treasures to. By the way, as soon as he gets his shop cleaned out, I will add to my bucket list the piece of furniture I want him to make for me.
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Using a skin graft to give city eyesores an eco-friendly face-lift
Article Summary
There's no doubt fashion is fleeting. What might be the height of fashion today is almost certainly the fashion faux pas of tomorrow. Thankfully, clothes and hairstyles are easy to change and we're not getting around in leg warmers and new romantic bouffants anymore – well most of us aren't. Unfortunately, it's not so easy to change the look of a building. What was the pinnacle of architectural design in the '60s is often the eyesore of the skyline today. The Laboratory for Visionary Architecture (LAVA) proposes a simple, cost effective, easily constructed skin that promises to transform dated structures into sustainable and stunning buildings.
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text:
Order must total $75 after discounts and not including customization. Excludes team orders, items with extra freight & shipping outside the contiguous US. Not valid on previous purchases. Expedited shipping additional. Expires 7/01/15 at 11:59 PM ET.
The Nike Premier Fleece Pant combines superb comfort with top notch construction.
Elastic waist with inner drawstring; Embroidered Nike Swoosh.
80/20 cotton/polyester. Imported.


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Five ways to report your own position to MarineTraffic
Why to report my vessel's position to MarineTraffic?
Visibility: Real-time vessels positions published in MarineTraffic.com proved to be extremely useful for a huge number of users related to the shipping industry. Ship owners, agents, pilots, tug operators, port Authorities, crew families and friends, passengers, cargo handlers, cargo recipients, brokers, leisure boaters, sailing racers, ship chandlers, bunkering companies, yacht charterers-brokers, etc. have probably a reason to follow the positions of your vessel. The list of interested parties is unlimited and this has been proven by the visibility of the web site marinetraffic.com which exceeds the number of 15 million visitors monthly.
Safety: Although marinetraffic.com is not intended to be used as a safety tool, there are many cases where making your position widely known could enhance your safety at sea. Making your position known to the public may be complementary to the official means of distress reporting such as EPIRB or DSC radio and may help in Search & Rescue procedures where the position of the vessel cannot be acquired by other means.
Historical data: MarineTraffic keeps a database of historical data. Historical data of the movements of your vessel could be accessed for many reasons, such as just for fun or recollection, for statistical reasons, for analyzing tracks in comparison to weather conditions, for accident investigation etc.
There are at least 5 alternative methods to enable position reporting for your vessel:
- 1. AIS Transponder
- 2. mAIS: iPhone and Android self-reporting app
- 3. Email position reports
- 4. Satellite or 3G/GSM locator devices
- 5. AIS transponder/receiver on board, connected to the Internet
1. AIS Transponder
The positions of the majority of the ships displayed on marinetraffic.com are based on the collection of AIS (Automatic Identification System) signals transmitted by AIS transponders installed on board vessels. All vessels over 299GT are required to carry an AIS transponder on board, which transmits their position, speed and course, among some other static information, such as vessel's name, dimensions and voyage details. Smaller vessels may optionally use the lower cost 'Class B' AIS Transponders to transmit AIS signals.
AIS transponders transmit periodically this information on VHF radio-frequencies and make this data available to the public domain. Our network of AIS receivers collects this information and publishes it on our web site.
The limitation of this method is that a ship must be within the range of one of our AIS receivers (i.e. at a distance smaller than 30 nautical miles from a receiving station on average) in order to collect and display her position.
Read more at Frequently Asked Questions...
2. mAIS: iPhone and Android self-reporting app
mAIS is a mobile application that makes possible to use your mobile device to report the positions of a vessel to MarineTraffic. GPS-enabled devices (iPhone/iPad and Android) can be used to report the position, the details and the status of a vessel in case an AIS transponder is not available or the vessel is out of the range of MarineTraffic's AIS receivers.
iPhone/iPad: Open the App Store and search for 'mAIS marinetraffic' or just follow the link: http://itunes.apple.com/us/app/iais-marinetraffic/id606860310?ls=1&mt=8
Android: Open the Android Market on your mobile device and search for 'mAIS'. Alternatively, open the current page in the web browser of your mobile device and click on the following link: https://play.google.com/store/apps/details?id=com.marinetraffic.iais
The positions of a vessel will be reported if the application is started on the mobile device and whenever Internet connectivity is available. The position reporting will continue even if the app is running at the background on the device.
3. Email position reports
We are accepting position reports by email messages sent to email@example.com. If you have either an established automated procedure to send email position reports or you wish to manually send your position to MarineTraffic, you may consider including the above email address to the recipients of your position messages.
Email position messages must be sent on regular intervals to firstname.lastname@example.com in order to be able to display a continuous track of your vessel. Ideally, the message interval should be less than 15 minutes, but an interval of one hour or more is acceptable.
In order for us to be able to parse your report, the message should be preferably written in a standard format like the following:
(Latitude and Longitude in decimal degrees – negative values for South or West coordinates. Speed in knots. Timestamp in UTC time)
Many other formats are acceptable, e.g.:
_______________ NameOfVessel Latitude:28.42546 Longitude:-80.82784 GPS location Date/Time:03/03/2012 10:52:03 EST _______________
The standard format send via Inmarsat is also acceptable.
Since there is no identification of the vessel within the message, we identify the vessel by the email address of the sender, which looks like this: email@example.com.
You may configure your Inmarsat device to send standard email position reports, like the following, at fixed time intervals to email@example.com:
_______________ GPS fix Lat: S 33 28' 55'' Long: E 151 38' 50'' Time: 02:13:10 UTC Date: 03-03-2012 Velocity: 12 km/h Course: 187 Accuracy Horiz: +/- 8 m Vert: +/- 16 m _______________
If you intend to start sending your position reports by email, please send us a message expressing your intention to email@example.com, including the MMSI number of your vessel, the email address of the sender of the reports and a sample of your position report.
4. Satellite or 3G/GSM locator devices
Many boaters are using a personal locator device, which reports their position to public or private networks through satellite or cellular data networks.
A good example of such devices is the SPOT device (http://www.findmespot.eu/en/) which periodically reports the position of an individual through satellites. This device can be configured to make the position of its owner shared and accessible through a web page like this: http://share.findmespot.com/shared/faces/viewspots.jsp?glId=0ZkIU2KIJLZcnsGNa2LutzchJF76eiR4U
If you decide to use a SPOT device (or other similar) on board your vessel, just configure your position as shared and give us the 'glid' code similarly to the above example URL. We will be then able to record your positions and display them on marinetraffic.com.
If you are using any other satellite locator device, let us know of its details. We may be able to record your positions if you are willing to make them available through marinetraffic.com.
5. AIS transponder/receiver on board, connected to the Internet
AIS transponders or receivers already installed on most vessels can be used as 'mobile' AIS receiving stations. If your vessel has a satellite Internet connection onboard, then the collected signals can be easily sent to our central server, with no additional cost or equipment. This method will not only enable the position reporting of your own vessel but for all the targets near your vessel.
All you have to do is to connect the serial output of your AIS transponder/receiver to a computer with Internet connectivity and run 'AIS Dispatcher' or 'AIS Logger' software to forward the data. The bandwidth consumption is minimal and should be not a concern about increasing the cost of satellite Internet subscriptions. Read more...
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