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Inventory Search
Dealer Rating
Our average rating from our customers is
It would be great if all dealers had such great service.You have set the bar forexcellence.You are the greatest.Read More >>
Paulette K.
Camas, WA
Warranty work was performed quickly and professionally.I bought my car there because my salesman has a cute sister.Read More >>
Lee S.
Vancouver, WA
You guys are fantastic not only was the work done right. It was done fast. I know when I bring s vehicle to your team it's going to get first class treatment.Thanks for everything you do.Read More >>
Edward O.
Vancouver, WA
My sales associate, Scott Borges, made my buying experience easy and efficient. He came in on his day off to complete the sale, he went above and beyond.Thank you!Read More >>
Hoyt W.
Bend, OR
I have always been happy with Weston's seviceRead More >>
Gary I.
Gresham, OR
GoodRead More >>
Lance D.
Battle Ground, WA
I purchased a 2012 Buick inclave and I was helped by Jesse lemons his service was wonderful and very helpful. I am very happy with the service. Thank you very much.Read More >>
Valente M.
Portland, OR
The group there are very professional and yet very very personable. They are all great and the customer/friend is always taken care of.Thanks guys and gals,Robert "Scott" KennedyRead More >>
Jennifer K.
Gresham, OR
This is the fifth or sixth vehicle purchased at Weston's. I've always gotten excellent service when buying or coming in for service.Read More >>
Shirley W.
Portland, OR
Brian took care of setting up the repair of the power steering. It was done quickly and efficiently and brought in at a reasonable expense to us. Our vehicle is a 2009 GMC Acadia.Read More >>
Lee K.
Vancouver, WA
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Welcome to Weston Buick GMC, Your Portland Buick, GMC Dealer!
Visit Weston Buick GMC and see why we're the best dealer around. At Weston Buick GMC, your local Portland Buick and GMC source, we offer new and used vehicles to our customers, service, parts and financing options. Weston makes purchasing and servicing your vehicle the most pleasurable automotive experience you ever had.
A Hillsboro, Beaverton & Clackamas Buick, GMC Source
Weston Buick GMC is just minutes from downtown, just off I-84. Serving as your Hillsboro and Beaverton GMC and Buick dealership, we are easy to find! Look no further and see why we are worth a short drive from anywhere in the greater Portland area! We have 12 acres of vehicles to browse through, making us the place to find Clackamas Buick and GMC cars near Portland. Come and visit us today!
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Weston Buick GMC has one of the top service centers in Oregon. To keep your Hillsboro Buick or Beaverton GMC in good condition, make an appointment at our service department - we can handle anything from minor repair to major body work. We also offer amazing service specials, accessories, tires and certified service. Take a look at our great every day prices on oil changes, tires, brake pad installation and more outside Portland. We want to continue to be your home for all things GMC and Buick, even after the purchase of your new car, truck or SUV.
Used Cars for Beaverton & Hillsboro Drivers
We are proud to offer a wide selection of new cars, and great values on used cars as well for our Beaverton and Hillsboro drivers. Not only are they great values, but we have a huge inventory, so you can get exactly the used car in Beaverton or Hillsboro that you have been looking for from our dealership in Portland.
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When it comes to auto loans and auto financing in Portland, look to Weston Buick GMC for a helpful finance department that can answer any questions you have about financing your new or used Buick or GMC vehicle. We will walk you through our available financing options, and you can even pre-qualify for financing online. Weston Buick GMC will be happy to assist you with bad credit car loans in Portland; your credit shouldn't be a problem with Weston! Give our finance department a call at (503) 465-4895, or contact us online today.


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This Web site is intended for use by US residents only. See International Sites. See our delivery policy for full details. Copyright 1998-2014, Staples, Inc., All Rights Reserved.

subset: commoncrawl


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Sean Astin, Trace Adkins, Sarah Drew, Sammi Hanratty, Patricia Heaton, Abbie Cobb, Andrea Logan White and David Hunt - Premiere of 'Mom's Night Out' held at the TCL Chinese Theatre IMAX - Arrivals - Los Angeles, California, United States - Tuesday 29th April 2014
Trace Adkins - Premiere of 'Mom's Night Out' held at the TCL Chinese Theater - Arrivals - Los Angeles, California, United States - Tuesday 29th April 2014
Patricia Heaton, Sarah Drew, Sean Astin, Sammi Hanratty, Trace Adkins and guests - Moms Night Out Premiere at TCL Chinese Theater - Red Carpet - Los Angeles, California, United States - Tuesday 29th April 2014
The country music singer's wife, Rhonda, of 16 years has filed for divorce due to "irreconcilable differences."
Trace Adkins' wife wants her marriage to be over.
Rhonda Adkin filed for divorce from the country music singer this past Tuesday (March 25th) in Tennessee citing "irreconcilable differences."
The terms of the papers include her asking the court for primary residential custody of their children and Adkins to pay full child support, alimony and all her legal fees, according to WSMV in Nashville.
Continue reading: Trace Adkins' Wife Files For Divorce After Being Married For 16 Years
The country star was involved in a bar brawl with an impersonator on a cruise to Jamaica
Trace Adkins was twelve years sober until recently, with his more than a decade-long sobriety crumbling before him whilst onboard a cruise ship to the Caribbean. Having battled alcohol-related problems in the past, it had seemed before that Adkins had caged his demons, but as his off-shore meltdown clearly shows, those demons have been set free.
Trace had previously entered rehab in 2001
Trace was headlining a country cruise to Jamaica, with TMZ first reporting that whilst out at sea Adkins had begun drinking and started to get rowdier as the time, and the drinks, passed by. In his drunken stupor, Adkins stumbled across the onboard karaoke bar, where he literally met his double. On the mic at the bar was one of his impersonators, a sight that would have no doubt been a shock to any drunk person, but it was sight that made Adkins' blood boil.
Continue reading: Trace Adkins Checks Into Rehab Following Cruise Ship Drama
Trace Adkins was 12 years sober until he got drunk on a cruise ship and had a fight with an impersonator, the country singer is now in rehabilitation facility.
Country singer Trace Adkins has had to face facts and address some personal issues.
The 52 year-old has checked into a rehabilitation facility to deal with alcohol abuse.
Adkins has been sober for 12 years but found himself intoxicated while headlining a country cruise headed to Jamaica, according to TMZ.
Continue reading: Trace Adkins Fights Impersonator On Crusie Ship Before Checking Into Rehab For Alcohol Abuse
Trace Adkins - HOLLYWOOD FL , DECEMBER 17: Trace Adkins performs The Christmas Show at Hard Rock Live at the Seminole Hard Rock Hotel & Casino on Tuesday, December 17, 2013 in Hollywood, Florida. - Hollywood, Florida, United States - Wednesday 18th December 2013
cherie Hall
Holy Dove(Debbi...


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North Lodge Apartments
No availability found through our partners. Please contact the business directly or check some of our recommended alternatives.
Photos of North Lodge Apartments
TripAdvisor Reviews North Lodge Apartments Launceston
Travel Blogs from Launceston
Our last few days with Nana in North Tasmania
Yesterday was Christmas Day. We had a nice quite relaxing day at the caravan park. Jackson and Mikayla were up at 5:30am going through their Santa stockings. We woke Zoe up at 8 O'clock so she could join in. We had a lovely cooked breakfast before settling in to open the pressies. We finished the pressies about 1 o'clock and Keiran put the roast pork in the oven for our late ...
Watery Hayfever Eyes Get The Better of Me
... of riders standing and listening intently to a weary gang strewn across the carpet in all manner of wakefulness.
A couple of us had plans on finding a light tea but with Robin and Roger in tow it was spaghetti and pastas all round.
I retired to the hotel feeling a little unwell again. I don't think it could be nerves at this point, I suspect it might be something I have eaten. Hopefully it settles for the start of the Safari tomorrow.
Day 13 Hoi An city and My Son tour
... Not happy Staff at Be Be were very helpful and made a number of alterations which was to be tired on again the next day. All arrived back at the hotel saturated and thoroughly exhausted to join Di M and Ann for swim, cocktails and club sandwiches, just so peaceful, tranquil and relaxing soaking it all up. So relaxed we decided to stay on at the hotel rather than heading back into the old town of Hoi ...
Seahorses, Playtpodes and Macaques
... other pieces of diner memorabilia.
We sat in one of the booths, ordered some shakes and hot dog for Georgia. Afternoon snack over we headed back to our cabin and Stephen off to Dickens Cider house in Launceston.
When he returned we headed off for our last dinner in Tasmania, at the Harley Iron Horse Bar and Grill. It's a Harley-Davidson themed Restaurant located next to Ric*******'s Harley-Davidson in ...
Tuesday - The Journey and Port Arthur The alarm went off at 3.15am for our flight to Taz! We got to the airport in plenty of time (somehow) and boarded the flight. Rania got the worst dry mouth ever on the plane with her attractive open mouthed sleeping technique and before we knew it we were stepping off the plane into 34degree heat. There could be some packing errors......We picked up the rental car and it was a pretty decent new automatic Nissan Micra, the woman behind the ...


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John Grisham (24 books)
- Type:
- Other > E-books
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- 24
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- 12.43 MiB (13031665 Bytes)
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- English
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(Problems with magnets links are fixed by upgrading your torrent client!)
All books are in .mobi format If you don't have a program that can convert or view .mobi you can download the free program calibre http://calibre-ebook.com/download Pleese seed. Book list: a painted house a time to kill bleachers ford county playing for pizza skipping christmas the appeal the associate the brethren the chamber the client the confession the firm the innocent man the king of torts the last juror the partner the pelican brief the rainmaker the runaway jury the street lawyer the summons the testament
John Grisham is one of my favourite authors of all time..thanks a lot for this upload
Thank you - looking forward to reading The Confession
Thank you!
Thank you very much!


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Hi: 11° Lo:6°
By Tristan Harris Tuesday 28 January 2014 Updated: 30/01 23:17
A STAGGERING 1,100 people applied for 120 paramedic jobs at West Midlands Ambulance Service, the Trust has revealed.
Bosses said they were delighted with the 'fantastic response' to an advert they placed for the roles and by the wide range of people who had come forward from all backgrounds and communities.
Recruitment advisor Louise Harris said: "We thought it would be a popular role, but to get so much interest is tremendous as it means we will be able to ensure we have the highest quality of candidates.
"Clearly with so many applications to go through we will be a little busy for a while, but will let candidates know as soon as possible, please bear with us."
The assessments are due to start from Monday (February 3) and four courses, each having 30 people on them, will begin in the coming months.
"For those that are successful, it is a really good programme which is both challenging and rewarding.
"As a Trust, we are committed to ensuring that we have a paramedic on every vehicle.
"We already have one of the highest rates of paramedics in the country but this programme will take us one step closer to that vision," added Ms Harris.
1 Lucky escape after Bromsgrove arson attack
2 Fears for Bromsgrove man in Thai jail hell
3 Two arrested after dramatic chainsaw raid in Bromsgrove
4 40 new jobs to be created as WHAT! Store comes to Bromsgrove
5 'Community minded' councillor and former chairman dies at 90
THE HEAD of NEW College has announced he
THE HEAD of the region's ambulance service says
MILLIONS of pounds a year are being wasted
THE VICTIM of the murder in Hanbury on
A WORLD famous comedian will be stopping off in Redditch ...
REPAIR don't bin was the message in Stratford at the ...
Visit the Worcester Observer website for the latest.
EVESHAM'S first weekly parkrun has been hailed a great success ...


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The biography of Patricio Manns. This page has biographical information on Patricio Manns, one of the best poets of all time. This PoetrySoup page also provides access to the poet's poems, best poetry, quotes, and video biographies...if available.
Patricio Manns (born August 3, 1937) is a Chilean composer, author, poet, novelist, essayist, play writer and journalist .
More Patricio Manns Information


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Nice to meet you here at Audiko, where you can easily find hot ringtones for your smart phone. Today we have a ringtone of "engine" by Maserati as well as 40 other ringtones by Maserati. You can listen to all 4 Maserati – "engine" ringtone variations available here and download it for free just in a click. You can also select other 4 albums produced by Maserati for all time. "engine" is referred to , and we bring you a huge amount of videos absolutely for free. And finally, we have collected lyrics for this track and you can view it here as well. So feel free to browse, listen, download ringtones at Audiko.net. Make your phone sound cool!
Maserati engine Ringtone
Albums by Maserati
2 Oct 2012
9 Nov 2010
Top ringtones by Maserati
New ringtones
- Selena Gomez - Slow Down (9 Inch Remix) - 128bpm
- Voice changer with effects - Extraterrestrial 31/03/2015 11:30
- Voice changer with effects - Extraterrestrial 31/03/2015 08:48
- I'll Be Waiting Arjun Feat Arijit Singh | 2014 - I'll Be Waiting Arjun Feat Arijit Singh | 2014
- In the Night Garden - In the Night Garden Theme Tune
- Speedio322 - Mounting the Fighting Song -Viewtiful Joe Mix-
- Bobbie Gentry - All I Have To Do Is Dream (feat. Bobbie Gentry)
- Collectif Métissé - Hey ! Baby ! (Club Mix)
- Cast Of Disneyland Resort Paris - Proud Lights
- Celine Dion - My Heart Will Go On£¨ÎÒÐÄÓÀºã£©


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- News
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The crawl is on for drivers on I-94 heading into both Minneapolis and St. Paul.
In Minneapolis, the line up on eastbound 94 begins at Broadway and the tight conditions persist over to Hwy. 280. That is 18 minutes.
In St. Paul, things jam up at County Road 19 and remain heavy to downtown St. Paul. That drive is taking up to 30 minutes.
The Crosstown is absolutely horrible with 30 minutes needed for westbound drivers from 28th Avenue over to Hwy. 169. Eastbound isn't much better with 20 minutes needed from the drive from Hwy. 169 to Cedar Avenue.


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About Gentak Ophtalmic Ointment for Dogs Gentak Gentamicin Ophthalmic Ointment Treats Dogs and ... and redness of the eye.Gentak Ophthalmic Ointment is a sterile ... - read more
Healthy Dogs; Featured Topics. Know ... How to use Gentak ophthalmic. To apply eye drops, ... Use eye drops before eye ointments to allow the drops to enter the eye. - read more
Please vote if the answer you were given helped you or not, thats the best way to improve our algorithm. You can also submit an answer or search documents about gentak eye drops for dogs.


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Lacy Shruggy
By: Free Vintage Knitting
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Click here to view your Knitting Patterns.
This women's knit shrug is a staple for all wardrobes. Not only does it add a nice, homemade touch to any outfit, but it also lets you wear sleeveless dresses or shirts during the fall!
Knitting Needle Size: 2 or 2.75 mm, 4 or 3.5 mm
Yarn Weight: (0) Lace (33-40 stitches to 4 inches)
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Ursula Tod (née Spencer Churchill)
3 of 3 portraits of Ursula Tod (née Spencer Churchill)
© National Portrait Gallery, London
Ursula Tod (née Spencer Churchill)
by Bassano Ltd
whole-plate glass negative, 21 December 1920
Given by Bassano & Vandyk Studios, 1974
Photographs Collection
NPG x37053
Click on the links below to find out more:
Sitterback to top
- Ursula Tod (née Spencer Churchill) (1901-1934), Wife of Alick Frederick Tod; daughter of 1st Viscount Churchill. Sitter in 3 portraits.
Artistback to top
- Bassano Ltd (active 1901-1962). Artist associated with 42705 portraits.
Portrait setback to top
Subject/Themeback to top
Exhibitions and displays
- Old Titles and New Money: American Heiresses and the British Aristocracy
Until 1 August
- Women and the First World War
Until 25 October


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Ultimate Demon Virtual Assistant (Similar to SENukex)
Closed - This job posting has been filled and work has been completed.
Job Description
I'm looking for someone to setup and run Ultimate demon campaigns for me.
You must have a regular schedule that you are online.
Must speak/write good english
Aprox 10 hours per week.
The program you are using will be similar to SeNukex. You must be familar with Seo concepts.
You must have expereince with SEnukex. Put 4+7=11 at the front of your application subject line or it will be deleted.
Skills: english


text:
Character actor Dennis Farina, best known for his stint as Det. Joe Fontana on Law & Order, has died of a blood clot in his lung, the Los Angeles Times confirms. He was 69.
Though he had made a late-career shift into TV, Farina, born in 1943, had many memorable big screen roles in movies like Midnight Run, Get Shorty, Out of Sight, and Saving Private Ryan. Unlike so many actors, his tough-guy persona was no act. Farina, a Chicago native, originally patrolled the Windy City as a cop before catching the acting bug in his late 30s. That experience enabled him to bring a gruff, world-weariness to characters like Lt. Mike Torello on NBC's two-season cop drama Crime Story, which has become a cult favorite since its cancellation in 1988.
Crime Story was produced by Michael Mann, who had cast Farina in his movies Thief and Manhunter and would continue to be a frequent collaborator until the end: Farina's last role was as Dustin Hoffman's chauffeur and "muscle" on HBO's Luck in 2012, a show co-created by Mann.
But it's his work on Law & Order that gained him a whole new following. In 2004, following the death of Jerry Orbach, who'd played the iconic character Lenny Briscoe for over a decade, Law & Order was in jeopardy of coming to a screeching halt. Farina stepped in and, though he couldn't match Orbach's sense of streetwise intellectualism, opting for instead a more bullish, hard-charging approach, arguably saved the show. Just check out his naturalistic, unfussy style in this scene from Law & Order:
Farina is survived by three sons, six grandchildren, and his wife of 35 years, Marianne Cahill.
Follow Christian Blauvelt on Twitter @Ctblauvelt | Follow Hollywood.com on Twitter @Hollywood_com
Might There Be a Meeting of the Parents on 'New Girl'
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Current Conditions
10.2°in Orange
- Wind: SW at 24.1kph
- Humidity: 61%
- Sunrise: 7:12am AEDT
- Sunset: 7:05pm AEDT
A complex low moving east from TAS is producing damaging winds and cool showers over VIC and TAS. A pair of troughs are producing storms over WA and the odd shower in QLD. The monsoon trough and remnants of TC Nathan producing thundery showers over the Top End and Kimberley. The southern (polar) jet is steering a trough over the Tasman Sea. The northern (tropical) jet remains weak. More Synoptic information
Patchy cloud increasing over parts of the Northern Rivers, and Northern Tablelands with a low pressure trough is causing showers and thunderstorms to develop. Cloud over southern parts of the state associated with a low over Bass Strait is causing cool showers to develop.
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Ninth Circuit Denies Rehearing En Banc in Quon v. Arch Wireless Text Message Privacy Case
By Debbie Rosenbaum — Edited by Christina Hayes
Quon v. Arch Wireless Operating Co.
Ninth Circuit, No. 07-55282
Order denying rehearing en banc
Opinion concurring in denial of rehearing en banc
Opinion dissenting from denial of rehearing en banc
On January 27, 2009, the Ninth Circuit denied rehearing en banc in Quon v. Arch Wireless, a case decided by a Ninth Circuit panel in June of 2008. The Ninth Circuit panel held that the City of Ontario, California violated the Fourth Amendment when Ontario Police Department officials audited text messages sent by a department employee. The court also held that Arch Wireless, the city's service provider, had violated the Stored Communications Act ("SCA"), 18 U.S.C. § 2701-2711, when it disclosed messages to individuals who were not the addressees or intended recipients.
Shaun Martin of the California Appellate Report investigates the politics of the concurring and dissenting opinions. Martin points out that despite the similarities between Judges Wardlaw and Ikuta (both judges are UCLA Law School graduates, well-recognized women in Southern California, and both practiced for the firm of O'Melveny & Myers), the conflict evident in their opinions amounts to a series of "dueling bench slaps extraordinarie."


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The Body Shop Tea Tree Oil Foaming Face Wash
133 reviews
59% would repurchase
Package Quality: 4.2
Price: $$$
Package Quality: 4.2
Price: $$$
Not tested on animals
The Body Shop is a Cruelty-Free Subsidiary.
INGREDIENTSWater, Cocamidopropyl Betaine, Polysorbate 20, Coco-Glucoside, PEG-40 Hydrogenated Castor Oil, Melaleuca Alternifolia (Tea Tree) Leaf Oil, Glycerin, Calophyllum Inophyllum Seed Oil, Myristamidopropyl PG-Dimonium Chloride Phosphate, Citric Acid, p-Anisic Acid, PVP, Salix Alba (Willow) Bark Extract, Sodium Hydroxide, Menthol, Limonene, Leptospermum Petersonii (Lemon Tea Tree) Oil, Tocopherol.
on 2/23/2015 11:22:00 PM
Age: 19-24
Skin: Normal, Fair-Medium, Not Sure
Hair: Blond, Other, Other
Eyes: Blue
i dont LOVE it but dont hate it.. my skin has improved alot but that could be from change in my diet... i dont like that it doesnt lather up well, it seems to disolve inyo nothing but over all i like it and would buy again but would like to try other products first
on 12/12/2014 7:13:00 PM
Age: 18 & Under
Skin: Acne-prone, Fair, Not Sure
Hair: Brown, Other, Other
Eyes: Blue
I bought this because I love tea tree oil products for treating my acne (nothing major,just typical teenage acne). I bought the cleanser with the face buffer and the tea tree pore minimiser. it first broke me out (as expected) but after a week i saw drastic changes, my skin cleared up although the occasional pimple ( nothing i could help. I'm 14 after all. It also helped reduce oil on my face, but after a few hours my skin did get oily, again nothing it could help. I'm on my 3rd bottle and it lasts ages! leaves my skin amazing. Would definitely recommend for teenagers, acne prone or oily skin
on 10/21/2014 1:32:00 PM
Age: 25-29
Skin: Combination, Fair, Not Sure
Hair: Brunette, Other, Other
Eyes: Green
I really don't like this cleanser. It leaves my skin very dry and there are no improvements at all. It also doesn't feels nice on my skin when using it. The creamy cleanser from the tea tree line is nicer but also not loving that one.
on 10/17/2014 6:28:00 AM
Age: 18 & Under
Skin: Combination, Olive, Not Sure
Hair: Brown, Other, Other
Eyes: Hazel
Was really disappointed with this product!
I absolutely love the body shop, however this product wasnt to great!
I am a huge fan of Tea tree products (they work really well on my skin!!)
After I washed my face with this product, it completely dried out my face. But half way through the day, my face all of a sudden turned super duper oily!! (I have a normal skin type!)
It also made me breakout with blackheads and pores!
Not a fan of this one sorry!
on 8/2/2014 1:19:00 AM
Age: 19-24
Skin: Acne-prone, Fair-Medium, Not Sure
Hair: Brown, Other, Other
Eyes: Brown
This product did not work AT ALL! My skin even worse because I did not have any acne scars at first but after I used my cheek tone is ruined! Glad some people find this product useful but I will never use it again and other tea tree oil products.
on 7/31/2014 6:30:00 PM
Age: 19-24
Skin: Acne-prone, Tan, Not Sure
Hair: Brown, Wavy, Medium
Eyes: Brown
I have been using the tea tree foam cleanser for nearly one year. My skin is prone to spots so 1. I wear lots of heavy coverage make up and 2. I need a good cleanser to get rid of everything. I thought this product would be good in particular as it has tea tree oils and I believe very strongly in the benefits of face steaming.
The first thing about this product is the scent, it is very strong which I personally love but I can see how it may not be for everyone. One pump is enough to clean the face, but as this product lasts and lasts, I would encourage you to push the boat out, and take two to do a really thorough job. The price is very good, and if you have the body shop loyalty card (at least in the UK) you could even pick this up for free (like i did!).
I have seen a very similar product by Nivea and I am keen to try this out once this bottle comes to an end. I think the product is good, but I do not think it is anything special.
on 6/19/2014 2:44:00 AM
Age: 25-29
Skin: Combination, Tan, Not Sure
Hair: Black, Other, Other
Eyes: Black
its been almost 1 month ive been using this foam, it cleanse my skin with just 1pump, I love how it leaves my skin feel clean, but after 3-4hours I can see my face oily again,. the scent is good,, can cleanse daily makeup almost perfect..
on 6/6/2014 2:42:00 PM
Age: 19-24
Skin: Oily, Fair-Medium, Not Sure
Hair: Brown, Other, Other
Eyes: Hazel
A while ago, I have received 30 pounds body shop voucher as a valentines gift from my husband.
After reading a lot of reviews I have decided to purchase, entire set of Tea Tree, as my skin is oily, acne prone and blemished. It turned out to be the biggest mistake.
Firstly, the chemicals used in those products are so strong I had a feeling like my face was burning! and I don't have a sensitive skin.
From the entire set, I am only using Tea Tree face mask, but only once a week on average as it is a bit drying, but nicely heals pimples. I am also finding Tea Tree Oil, is of a good quality in comparison to other brands. However, I would definitely not recommend any face washes from this set or especially NO to the Tea Tree face cream.
After using the set regularly for two weeks, I have never seen my face with so many pimples, and at the end it became so oily it took me a while to come back to old me.
on 5/18/2014 2:08:00 PM
Age: 18 & Under
Skin: Combination, Fair, Not Sure
Hair: Blond, Other, Other
Eyes: Blue
I'm a teenager with oily skin and moderate acne, it's not too bad but my skin is definitely not perfect. I have acne scarring on both of my cheeks and a few pimples in my t-zone. When I first tried this cleanser I loved how clean my skin felt afterwards, I've been using it for maybe two weeks and I have no complains :) Although, the smell is not too good, but it's not horrible. It's a really nice cleanser and most importantly: it hasn't broken me out!
on 5/3/2014 6:24:00 AM
Age: 25-29
Skin: Acne-prone, Olive, Warm
Hair: Black, Straight, Fine
Eyes: Black
I have adult hormonal acne, especially aggravated if wrong product is in use. This cleanser is used along with others (SKII face wash, TBS seaweed face wash, etc) It can be quite drying, so I'll use it only when my skin feels oily. It's refreshing, lathers well, and feels like it cleansed the angry acne bits well. Pretty basic blemish cleanser, I appreciate the incorporation of tea-tree oil in this product
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In a method of forming damascene metallization lines on a substrate by electroplating and chemical mechanical polishing, the metal layer thickness profile is shaped in correspondence to the removal rate during the chemical mechanical polishing. Thus, any non-uniformity of the chemical mechanical polishing process may be compensated for by appropriately depositing the metal layer so that erosion and dishing of the finally obtained metal lines are within tightly selected manufacturing tolerances.
1. A method of forming metal lines, comprising:
providing a substrate having formed therein a recessed portion in a first region and a second region;
obtaining an estimated expected removal rate of the metal in the first region and the second region of the substrate during a chemical mechanical polishing to be subsequently performed;
depositing the metal on the substrate by electroplating, wherein a deposition thickness of the metal in the first and second regions is adjusted in correspondence to the estimated expected removal rate in the first and second regions; and
removing excess metal by chemical mechanical polishing to produce the metal line.
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16. The method of
17. A method of forming metal lines comprising:
providing a substrate with a central region and a peripheral region, the central region and the peripheral region each having a recessed portion defining a height dimension;
depositing a metal layer over the substrate, wherein an averaged layer thickness of the peripheral region is different from an averaged layer thickness of the central region; and
removing excess metal from the substrate by chemical mechanical polishing, wherein the difference of the averaged layer thickness of the peripheral and the central regions is adjusted during the deposition of the metal such that the height of the metal in the recessed portions is within a predefined tolerance after the removal of the excess metal.
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31. A method of forming metal lines in a first and a second region of a substrate, the method comprising:
depositing a seed layer on the substrate;
depositing a metal layer by electroplating while controlling at least one of an electrical field and electrolyte flow to the substrate so as to be different in the first and second regions to obtain a greater metal thickness in one of the first and second regions that is expected to have a higher removal rate in a subsequent chemical mechanical polishing step; and
removing excess metal in the first and second regions by chemical mechanical polishing of the substrate.
32. The method of
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42. A method of forming a metal line in a first and a second region of the substrate, comprising:
depositing a seed layer on the substrate while controlling an averaged seed layer thickness in the first region to be different from an averaged seed layer thickness in the second region;
depositing a metal by electroplating to fill the metal lines, wherein a deposition rate during electroplating is different in the first and second regions in correspondence to the different averaged seed layer thicknesses; and
removing excess metal from the substrate.
43. The method of
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48. The method of
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54. A method of forming metal lines on a plurality of substrates, the method comprising:
obtaining parameter values indicative of a quality of a chemical mechanical polishing process to be performed for each of the substrates;
relating the parameter values for each substrate to a corresponding metal layer thickness profile;
depositing a metal layer on each substrate while controlling deposition parameters to substantially generate said metal thickness profile for each substrate; and
removing excess metal from each of the substrates by chemical mechanical polishing.
55. The method of
56. The method of
57. The method of
1. Field of the Invention
The present invention generally relates to the field of fabrication of integrated circuits, and, more particularly, to producing interconnect lines required in the various metallization layers of integrated circuits, such as CPUs, memory chips, and the like.
2. Description of the Related Art
In the fabrication of integrated circuits, such as CPUs, memory chips, application specific circuits and the like, it is generally necessary to provide one or more metal layers, so-called metallization layers, on the circuit substrate that serve to electrically connect the individual devices, such as transistor elements, capacitors, and the like, to one another. Depending on the complexity of the involved circuitry, the type of material used for the metallization and the dimensions of the metallization lines, which in turn are partly determined by the type of material and the available space on the substrate, a plurality of metallization layers may be necessary to provide the required functionality. The reproducible manufacturing of the individual metallization layers is of great importance for the performance and reliability of the integrated circuit, whereby the characteristics of each metallization line in every metallization layer must predictably lie within specified tolerances, as failure of a single line alone may jeopardize the complete circuit.
Since semiconductor manufacturers not only have to cope with requirements in terms of performance and reliability of the integrated circuits, but also in view of minimal production costs, the substrates on which the integrated circuits are fabricated are steadily increasing in diameter, since the majority of the process steps during manufacturing of the integrated circuit are carried out on a substrate basis rather than on a die basis so that a large number of chips may be processed in a single process step. Increasing substrate diameters, however, requires precise controlling of the process parameters to produce device features across the entire substrate that have characteristics as uniform as possible regardless of their location on the substrate.
Traditionally, aluminum has been used for metallization layers; however, semiconductor manufacturers have recently begun to employ copper as the metallization layer due to the superior characteristics of copper with respect to conductivity and electromigration, which are extremely important aspects for the production of integrated circuits with reduced feature sizes. One commonly used process for producing metallization layers is the so-called damascene process, where holes (also referred to as vias), trenches and/or other recessed portions are formed in an insulating layer, for example, a silicon dioxide layer, and are subsequently filled with the metal, such as copper. A preferred technique for supplying the copper to the vias and trenches is electroplating, since electroplating allows moderate deposition rates with a reasonable uniformity across large substrate areas compared to other deposition methods, thereby providing high cost-effectiveness. Electroplating requires, prior to deposition of the bulk material, the provision of a metallic seed layer, which is used to conduct electrical current during the bulk deposition. In some cases, the seed layer may also serve as a diffusion barrier layer and/or an adhesion layer for the bulk material, for example, copper, filled in the vias and trenches. In general, the seed layer is a very thin layer of metal having a thickness of about 100 nm and may be deposited by any known method, such as physical vapor deposition (PVD) or chemical vapor deposition (CVD). After deposition of the seed layer, the substrate is brought into contact with a electrolyte bath containing ionic compounds including metal ions of the required type and a voltage is established between an anode within the electrolyte bath and the substrate which acts as a cathode, whereby the seed layer serves to distribute the current across the entire substrate area. The metal layer is plated to an extent to form an overlying layer, thereby providing a metal layer that fills the trenches and vias and extends slightly above these device features. Typically, the thickness of the metal layer is on the order of 1 μm.
After deposition of the metal layer, excess metal has to be removed to complete the patterning of metal lines. In the damascene process, chemical mechanical polishing (CMP) has proven to be the preferred technique for removing excess metal. During the chemical mechanical polishing, the combined action of a chemical removal agent and an abrasive is used to commonly react and grind and polish the exposed metal surface, thereby planarizing the residual substrate surface. Although CMP is very successfully employed in fabricating metallization layers, establishing a CMP technique that provides minimum non-uniformity across the entire substrate area has been found to be a challenging task for process engineers, especially for large-diameter substrates. In providing a uniform planarized surface after removal of excess metal, it is not only important during a CMP process to keep the removal of the metal and the surrounding dielectric material, which are also referred to as dishing and erosion, within specified tolerances regarding the various feature patterns on a single chip, but to maintain these specified tolerances in view of dishing and erosion also at locations that are spaced more distantly, for example at the center and the periphery of the substrate.
With reference to FIGS. 1a and 1 b, a typical metallization pattern is schematically depicted to demonstrate the effects of dishing and erosion during CMP. In FIG. 1a, a metallization structure 100 comprises an insulating layer 101 having formed therein a single metal line 102 and a plurality of closely spaced metallization lines 103. The insulating layer 101 may, for example, be made of silicon dioxide and the metal lines 102 and 103 may primarily comprise copper. The metallization structure 100 may be positioned, for example, at a central location of the substrate. While the metallization structure 100 is subjected to the CMP process, insulating material is removed from the initial insulating layer 101 as represented by the arrows E. This removal of material compared to the initial material layer is referred to as erosion and may depend on the type of feature pattern formed in the insulating layer 101. For example, the erosion in the vicinity of the single metal line 102 may be significantly smaller than in the vicinity of the plurality of metal lines 103. Additionally, copper within the metal lines 102 and 103 is removed more intensely than material of the surrounding insulating layer 101. This excess material removal process within the metal lines 102 and 103 is referred to as �dishing� and is indicated by D in FIG. 1a.
FIG. 1b schematically depicts a metallization structure 150 comprising an insulating layer 151 and metal lines 152 and 153 formed in the insulating layer 151. In principle, the metallization structure 150 corresponds to the structure 100, but is, however, located at the periphery of the substrate. Since in the CMP process under consideration the removal rate at the periphery of the substrate is reduced compared to a central location, erosion and dishing in the metallization structure 150 is reduced compared to the structure 100. Accordingly, the metallization lines 152, 153 exhibit an increased cross-section and, therefore, an enhanced conductivity compared to the metal lines 102, 103. In order to secure reliability and performance of integrated circuits fabricated all over the substrate area, design rules must take into account the above-mentioned non-uniformities of the metal lines in different substrate areas. This contributes to process complexity and, thus, production costs.
In view of the above problems, there is a need for an improved process sequence for forming metallization layers exhibiting a higher degree of uniformity at different locations of the substrate.
The present invention is generally directed to a method that allows effective compensation for process variations during the formation of metallization layers by controlling the deposition of a metal layer in correspondence to process variations of the CMP process. Thus, a differing removal rate at a plurality of different areas on a substrate may be compensated for by controlling the deposition rate at each of the plurality of areas so as to correspondingly increase the layer thickness in an area having a high removal rate or to correspondingly decrease the layer thickness in an area having a reduced removal rate. In this way, even complex polishing variations, i.e., variations having a complex profile such as M-shaped or W-shaped profiles along the substrate diameter, may be corrected.
According to one embodiment, a method of forming metal lines comprises providing a substrate having formed therein a recessed portion in a first and a second region. The method further comprises obtaining an estimated expected removal rate of the metal at the first region and the second region of the substrate during a chemical mechanical polishing process to be performed. Additionally, the method includes depositing the metal on the substrate by electroplating, wherein a deposition thickness of the metal in the first and second regions is adjusted in correspondence to the estimated expected removal rate in the first and second regions. Moreover, excess metal is removed by chemical mechanical polishing to produce the metal lines.
In a further embodiment, a method of forming metal lines comprises providing a substrate with a central region and a peripheral region, wherein the central region and the peripheral region each have a recessed portion defining a height dimension. Moreover, a metal layer is deposited over the substrate, wherein an averaged layer thickness of the peripheral region is different from an averaged layer thickness of the central region. Additionally, the method includes removing excess material from the substrate by chemical mechanical polishing, wherein the difference of the averaged layer thickness of the peripheral and the central region is adjusted during the deposition of the metal such that the height of metal in the recessed portions is within a predefined tolerance after removal of the excess metal.
According to a another embodiment, a method of forming metal lines in a first and a second region of a substrate comprises the deposition of a seed layer on the substrate. Furthermore, the metal is deposited by electroplating while controlling at least one of an electrical field and electrolyte flow so as to be different at the first and second regions to obtain a greater metal thickness in one of the first and second regions that is expected to have a greater removal rate in a chemical mechanical polishing process to be performed. Moreover, the method includes the removal of excess metal in the first and second regions.
According to a further embodiment, a method of forming a metal line in a first and a second region of a substrate comprises depositing a seed layer on the substrate while controlling an averaged seed layer thickness in the first region to be different from an averaged seed layer thickness in the second region. Moreover, the method includes depositing the metal by electroplating to fill the metal lines and removing excess metal.
In another embodiment, a method of forming metal lines on a plurality of substrates comprises obtaining parameter values indicative of a quality of a chemical mechanical polishing process to be performed for each of the substrates. Moreover, the method includes relating the parameter values for each substrate to a corresponding metal layer thickness profile and depositing a metal layer on each substrate while controlling deposition parameters to substantially generate said metal thickness profile for each substrate. The method additionally comprises removing excess metal from each of the substrates by chemical mechanical polishing.
The invention may be understood by reference to the following description taken in conjunction with the accompanying drawings, in which like reference numerals identify like elements, and in which:
FIGS. 1a and 1 b schematically show a cross-sectional view of a typical metallization structure at different positions on a substrate;
FIG. 2 is a diagram depicting a typical process flow of one embodiment of the present invention;
FIG. 3a schematically depicts an exemplary reactor for electroplating to form a metal layer having a desired profile in accordance with one embodiment;
FIG. 3b schematically depicts an embodiment using a diffusing element to obtain a desired metal profile;
FIG. 3c shows a plan view of the diffusing element of FIG. 3b;
FIG. 4 schematically depicts a process chamber of a sputter tool to produce a seed layer having a desired thickness profile in accordance with a further embodiment; and
FIGS. 5a-5 e are diagrams depicting measurement results of various metal layer profiles with respect to the obtained erosion in a subsequent CMP process.
While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof have been shown by way of example in the drawings and are herein described in detail. It should be understood, however, that the description herein of specific embodiments is not intended to limit the invention to the particular forms disclosed, but on the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention as defined by the appended claims.
Illustrative embodiments of the invention are described below. In the interest of clarity, not all features of an actual implementation are described in this specification. It will of course be appreciated that in the development of any such actual embodiment, numerous implementation-specific decisions must be made to achieve the developers' specific goals, such as compliance with system-related and business-related constraints, which will vary from one implementation to another. Moreover, it will be appreciated that such a development effort might be complex and time-consuming, but would nevertheless be a routine undertaking for those of ordinary skill in the art having the benefit of this disclosure.
The present invention will now be described with reference to the attached figures. Although the various regions and structures of a semiconductor device are depicted in the drawings as having very precise, sharp configurations and profiles, those skilled in the art recognize that, in reality, these regions and structures are not as precise as indicated in the drawings. Additionally, the relative sizes of the various features and doped regions depicted in the drawings may be exaggerated or reduced as compared to the size of those features or regions on fabricated devices. Nevertheless, the attached drawings are included to describe and explain illustrative examples of the present invention. The words and phrases used herein should be understood and interpreted to have a meaning consistent with the under-standing of those words and phrases by those skilled in the relevant art. No special definition of a term or phrase, i.e., a definition that is different from the ordinary and customary meaning as understood by those skilled in the art, is intended to be implied by consistent usage of the term or phrase herein. To the extent that a term or phrase is intended to have a special meaning, i.e., a meaning other than that understood by skilled artisans, such a special definition will be expressly set forth in the specification in a definitional manner that directly and unequivocally provides the special definition for the term or phrase.
As has been pointed out in the introductory part of the application, CMP and electro-plating are the preferred techniques for forming metallization layers, in particular for forming a copper metallization, wherein presently a great deal of effort is made to optimize the individual processes in view of uniformity across the entire substrate surface. The inventors of the present application recognized that the insufficiency inherent to the individual processes may advantageously be employed in combination so as to obtain an enhanced metallization structure as described herein.
FIG. 2 depicts generally the process flow according to one illustrative embodiment of the present invention. In a first step 201 removal rates and/or parameters indicative of removal rates during a CMP process at at least two different regions on a substrate are determined. The determination of the removal rates and/or of the parameter values indicative of the removal rates may be attained by preparing corresponding test wafers that are subject to a CMP process as performed during the processing of product wafers.
According to one particular embodiment, the test wafers may bear trenches, vias and recessed portions that correspond to the device features of the product wafers. As is indicated in step 204, measurement of characteristics of metal lines, for example the erosion and dishing of selected lines, may be performed and the obtained results may be used for the determination of the removal rates and/or the parameter values indicating the removal rates. For instance, the erosion may represent a parameter that quantitatively describes the quality and thus removal rate uniformity of the CMP. According to this embodiment, also the product wafers or at least some of the product wafers may serve as the test wafers, thereby significantly reducing the number of test wafers or even rendering the employment of test wafers completely obsolete. Moreover, by determining the removal rates and/or the parameter values indicative thereof, such as erosion and/or dishing and/or the final layer thickness, on the basis of the measurement results of product wafers, the quality of the CMP process may continuously be monitored so that subtle changes in the CMP parameters due to, for example, degradation of the polishing pad, can be detected and taken into consideration for the determination of the corresponding removal rates and/or parameter values. For instance, any time dependence of the removal rates and/or of the parameter values can be taken into account after having established an initial removal rate and/or parameter value for the CMP station under consideration.
Furthermore, the determination of the removal rates and/or the parameter values indicative thereof can be carried out on the basis of a theoretical model of the CMP process. That is, calculations for erosion rates and dishing rates may be performed online or in advance, and the results thereof may be used for further processing. In one example, a series of test measurements is carried out and removal rates and/or corresponding parameter values may be obtained without further measurements once corresponding model data has been established from the empirical data.
According to step 202, a product substrate, such as a silicon wafer, bearing metallization structures at a first and a second region, such as the metallization structures 100 and 150 of FIGS. 1a and 1 b (of course without metal), is subjected to electroplating, wherein process parameters of the electroplating process are controlled so as to obtain a metal thickness in the first and the second region that is correlated with the removal rates and/or the parameter values determined in step 201. For instance, as previously explained, the removal rate of copper in a typical copper metallization process may be higher in the central region of the substrate than in the periphery. Accordingly, the process parameters of the electroplating process are controlled so as to obtain an increased metal thickness in the central region such that the actual removal rates in the central region and the peripheral region are within specified tolerances when the removal rates and/or the parameter values determined in step 201 are used as a basis. In particular, erosion and dishing values may be used for evaluating the removal rates, or may directly be used as the control parameters.
The controlling of the deposition thickness in the first and second regions, i.e., the controlling of the process parameters of the electroplating process, will now be described with reference to FIGS. 3 and 4. FIG. 3a schematically depicts an electroplating reactor 300 for depositing a metal layer on a substrate 301. The substrate 301 comprises a working surface 302 on which the metal, for example copper, is to be deposited. The substrate 301 is supported by a substrate holder 303 that is also configured to provide an electrical connection to a voltage source not shown in FIG. 3. The reactor 300 further comprises a reactor cavity 304 containing an electrolyte with metal ions that are to be deposited on the working surface 302. The electrolyte may be introduced into the reactor cavity 304 by a fluid line 305 that is also connected to a vertical riser pipe 306 arranged to supply electrolyte to the central portion of the substrate surface 302. A fluid distribution means 307 is located within the reactor cavity 304 and comprises two or more blades or vanes 308, which in turn may comprise a fluid passage 309 and a shield 310. The fluid distribution means 307 is rotatable around the central riser pipe 306 by appropriate driving means not shown in the figure. A large area anode 311 is arranged at the bottom of the reactor cavity 304 and is in contact with the electrolyte.
In operation, the fluid distribution means 307 rotates and electrolyte is supplied to the working surface 302, which now serves as a cathode, so that metal deposits on the working surface 302. The fluid distribution means 307 may be rotated by any appropriate drive system, such as an electrical motor, by coupling to a rotating magnetic field, and the like. Since the electric field prevailing at the surface 302 significantly depends on the shape of the shields 310 due to the ion transportation path determined by the shield 310, the deposition rate at specific regions on the substrate surface 302 is influenced by the shape of the shields 310. Accordingly, by appropriately selecting the shape of the shields 310, the thickness profile of the finally obtained metal layer can be adjusted. For instance, the shape of the shields 310 may be selected to obtain a �dome-like� thickness profile wherein the working surface 302 takes on an increased averaged metal thickness in the central region. Alternatively, and depending on the subsequent CMP process, a thickness profile may be attained in which the central region has a decreased metal thickness. Alternatively or additionally, in one embodiment, the flow of electrolyte to the working surface 302 may be controlled so as to obtain the desired thickness profile. In this respect, the shields 310 or additional shields may be arranged so as to restrict the fluid flow of electrolyte in substrate regions where a decreased metal thickness is desired. For example, additional shields may be provided at the periphery of the substrate 301 to restrict fluid flow in these regions. The shields 310 and the additional shields may be made of a non-conductive, preferably inert, material, such as Teflon�, so as to not react with the electrolyte. Moreover, by influencing the fluid flow, the electrical field is also affected in these regions.
FIG. 3b schematically depicts a further embodiment similar to the embodiment illustrated in FIG. 3a, wherein like parts have like numerals. Between the fluid distribution means 307 and the substrate 301 a diffusing element 312 is provided, having formed therein a pattern of openings 313 that shapes the electric field and/or controls the fluid flow to respective regions on the substrate 301 to thereby control the deposition rate and thus the finally obtained thickness profile. In FIG. 3b, the pattern 313 is constituted by substantially equally-sized openings that are provided in the central region more densely than at the periphery. However, the illustrated pattern 313 is only of exemplary nature and any appropriate shape and number of openings may be arranged to obtain the required flow distribution. For example, the openings can be arranged more densely in the periphery when a higher deposition rate is required in this region. Moreover, the material of the diffusing element 312 may be conductive so that the electrical field influencing the paths of the ions within the fluid flow may also be controlled.
FIG. 3c depicts the diffusing element 312 in more detail. As can be seen, the openings 313 form a pattern that allows an increased fluid flow to the central region of the substrate 301.
In a further embodiment, the anode 311 may be made of a plurality of distinct anode elements, which are arranged to provide a required electric field distribution for obtaining the desired thickness profile. In one embodiment, anode elements of substantially equal size are provided below the substrate, wherein in a region corresponding to the central region of the substrate significantly more anode elements are arranged than in a region corresponding to the periphery of the substrate. Therefore, a higher current density and thus deposition rate may be attained in the central region of the substrate.
It should be noted that the above-explained methods of attaining the desired thickness profile may also be used in combination. Moreover, in the art of electroplating, great efforts are made to obtain a uniform metal layer, whereby a variety of parameters influencing the finally obtained profile of the metal layer have been investigated. The corresponding results may thus be employed to adjust the corresponding parameters to �deform� the metal layer for obtaining a thickness profile required to compensate for the varying removal rates during a CMP process.
With reference to FIG. 4, a further embodiment is described in which process parameters for depositing a metal layer on a substrate are controlled so as to obtain a required thickness profile. In FIG. 4, a sputter tool 400 comprises a reaction chamber 401 including a plurality of magnets 402, a plasma shield 403 and a sputter target 404. On a substrate stage 405, a substrate 406 is provided including a first substrate region 407 and a second substrate region 408. A collimator 409 is located between the sputter target 404 and the substrate stage 405. The collimator 409 comprises openings 410, the diameters of which vary along the radius of the collimator 409, such that the openings 410 corresponding to the first region 407 have a larger diameter than the openings 410 corresponding to the second region 408. For the sake of convenience, in FIG. 4, any other means required for the operation of the sputter tool 400, such as feeding lines, plasma excitation means, radio frequency generator, bias voltage supply source and the like, are omitted.
As previously explained, in depositing a metal layer by electroplating, a thin seed layer is required that serves as a current distribution layer. As is well known, the deposition rate during electroplating depends, among other things, on the current density at the respective location of the substrate. Thus, if the initial capability for current transportation of the seed layer is designed to have a required profile, the initial deposition rate during electroplating, and thus the deposition rate during approximately the whole deposition process, may be increased or decreased as required. In particular, the initially decreased deposition rate in the center region of the substrate that is caused by the increased electrical resistance can be positively compensated for by the sputter tool shown in FIG. 4.
In operation, target atoms are liberated from the sputter target 404 by incoming charged particles of the plasma (not shown) and move towards the collimator 409. Due to the profile of the openings 410, a larger amount of target atoms hits the substrate 406 in the first region 407 than it does in the second region 408. The finally obtained thickness profile of the seed layer essentially conforms to the profile of the openings 410. In the present embodiment, the thickness profile of the seed layer will entail the dome-like thickness profile of the final metal layer obtained by the subsequent electroplating. According to this embodiment, conventional electroplating reactors may be used since no further control of process parameters, except for conventional process control for forming a uniform metal layer, during electroplating is necessary. In further embodiments, however, additional process parameters of the electroplating may be controlled in the manner as pointed out above with reference to FIG. 3.
In a further embodiment, the thickness profile of the seed layer may be controlled by varying the plasma shape, for example, by introducing correspondingly shaped plasma shields and/or by influencing the deposition rate by controlling the temperature of the substrate 406. It should be noted that the process parameters of other deposition methods for forming the seed layer may be controlled so as to obtain the required thickness profile. For instance, in one embodiment, chemical vapor deposition may be employed, wherein an appropriately formed deposition mask is provided that effectively varies the deposition rate on the substrate. Moreover, the temperature of the substrate may be controlled to modify the deposition rate.
Again referring to FIG. 2, after depositing the metal layer, the substrate is subjected to the CMP process, in which an endpoint detection is carried out to determine clearance of the wafer surface. In a particular embodiment, endpoint detection is performed in the first and the second regions and the measurement results are used for the determination of the removal rates and/or the parameter values indicative for the removal rates. For instance, the time difference between the occurrence of the clearance in the first and second regions may be used as a measure of the difference in removal rates of these regions and a corresponding correction value for the deposition of the metal layer in a subsequent substrate may be obtained. This procedure is advantageous when electroplating and CMP take place substantially at the same time so that any corrections required in shaping the profile of the metal layer may immediately be transmitted to the electroplating station to correspondingly change the deposition rate. In most cases, however, electroplating takes place for a lot of substrates prior to the lot being subjected to the CMP process, and any deviations in the removal rates and/or the parameter values indicative thereof may be gathered on, for example, lot basis and employed for the deposition process of subsequently plated substrate lots. A systematic parameter drift during the CMP process can therefore be detected and taken into account on a lot basis.
In one embodiment, a �forward� correction of �actual� CMP variations may be carried out, even if the metal deposition is completed. To this end, a model of the CMP may produce simulation results for an initially profiled substrate and �predict� results during the �progress� of the (simulated) CMP. The modeled CMP may be represented by erosion values, dishing values, layer thickness and the like.
The calculations may be performed on a (model) wafer basis and the simulation results may immediately be entered into the process control of the actual electroplating process. For instance, if in general a �dome-like� profile is required, the maximum dome height can be finely tuned individually on the basis of simulation results obtained from the CMP model for this substrate. To further enhance accuracy of this process, actual measurement results obtained on a lot basis of the actual CMP may be fed back to the CMP model to compensate for slight discrepancies between the model and the actual process.
After the CMP is completed, according to step 204, measurement of characteristics of the metal lines may be performed so as to determine, for example, erosion and dishing in the first and second regions. The corresponding measurement results may also be used to determine the removal rates and/or any parameter values. In one particular embodiment, these measurement results are employed for establishing a model, for example in the form of tables containing erosion and/or dishing values to process parameter values related to controlling the electroplating process. Thus, the determination of removal rates and/or any parameters indicative thereof may be accomplished for a plurality of substrates once initial removal rates at the beginning of a new process cycle have been established. For instance, an initial lot of substrates is processed in accordance with the sequence of FIG. 2, wherein initially removal rates have been determined in advance to control the deposition and thus the thickness profiles during electroplating. In step 204, erosion and dishing values are obtained and immediately fed back to the electroplating station to take into consideration any corrections necessary for obtaining the required tolerances. In this way, a sort of closed feedback loop is established in which possible changes in the electroplating and the CMP process may be compensated.
With reference to FIGS. 5a-5 e, a further illustrative embodiment will now be described. A plurality of substrates in wafer form having a diameter of about 300 mm have been prepared such that each of the wafers comprises a plurality of vias and trenches formed in an insulating layer, for example in the manner as shown in FIG. 1. In each wafer, a central region located at the center of the wafer and extending over at least several milli-meters and a peripheral region located at the perimeter of the wafer and extending inwardly at least about several millimeters comprise at least one metal line that may be used for measurements to determine removal rates and/or other parameters indicative of the removal rates, such as erosion and/or dishing. A first wafer receives a copper metal layer of about 1 μm thickness in accordance with standard process parameters, i.e., the electroplating parameters are adjusted to obtain a copper surface as uniform as possible. A second wafer is prepared with a profiled copper layer, wherein the wafer comprises a dome-like profile with a maximum thickness at the middle of the central region that exceeds the metal thickness at the perimeter by about 50 nm. A third wafer has been prepared with a thickness in the middle of the central region exceeding the perimeter by about 80 nm, and a fourth and a fifth wafer are prepared in the same manner having an excess thickness of 100 nm and 150 nm, respectively. The first to fifth wafers are then subjected to a CMP process under similar conditions, wherein the end of the CMP step is determined by endpoint detection in the peripheral and central regions. In subsequent measurements, the erosion of the at least one metal line in each of the central and peripheral regions of the first to fifth wafers have been determined at seven positions separated radially. In FIGS. 5a-5 e, the erosion in the central regions is indicated by circles and the erosion in the peripheral regions is indicated by squares.
In FIG. 5a, the erosion in the central region is significantly larger than the peripheral region, indicating that the removal rate in the central region exceeds the removal rate in the peripheral region. The CMP process was performed for 99 seconds and required an over-polish time of 18 seconds until the peripheral region was entirely cleared.
In FIG. 5b, representing the dome profile with 50 nm excess height, it is indicated that the removal rates in the central and peripheral regions are quite similar, since the erosion measured in the central region is only slightly larger than that measured in the peripheral region. The endpoint was detected in the central region at 109 seconds and an overpolish time of 18 seconds was added.
FIG. 5c shows the result for the dome-like structure with an excess height of 80 nm and indicates that the removal rates in the central and peripheral regions are substantially equal. Moreover, according to the endpoint detection, clearance in the peripheral and the central regions set in substantially simultaneously after 86 seconds and an overpolish time of 18 seconds was used.
FIG. 5d shows the results for the dome-like structure with an excess height of 100 nm. The increased erosion of the peripheral region indicates that now the removal rate in the peripheral region is higher than in the central region. Moreover, a polish time of 111 seconds was necessary with an overpolish time of 18 seconds.
FIG. 5e clearly indicates that the removal rate in the peripheral region is now significantly larger than in the central region, since erosion at the peripheral region is dramatically increased.
From the above results, the dome-like profile with an excess height of 80 nm is selected and offers a minimum deviation of the erosion of the metal lines compared to the conventionally employed process (FIG. 5a) and additionally provides a reduced process time.
It should be noted that in the illustrative embodiments described so far, the substrates are divided into a first and a second region, however a more complex profile may be employed pursuant to process requirements. For instance, for current feature sizes and line densities, the above-established 80 nm dome height may be successfully implemented in the process, but other values for different lay-outs, feature sizes, metal/via layers and technologies may be required. Depending on future technologies a complete reverse shape (bowl shape) may be necessary. Furthermore, more complex or sophisticated polishing processes may require more complex profiles such as W-shapes or M-shapes and the like.
The particular embodiments disclosed above are illustrative only, as the invention may be modified and practiced in different but equivalent manners apparent to those skilled in the art having the benefit of the teachings herein. For example, the process steps set forth above may be performed in a different order. Furthermore, no limitations are intended to the details of construction or design herein shown, other than as described in the claims below. It is therefore evident that the particular embodiments disclosed above may be altered or modified and all such variations are considered within the scope and spirit of the invention. Accordingly, the protection sought herein is as set forth in the claims below.
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Dead Space Full Game Free Download
Dead Space is a futuristic horror-action game on a space ship developed by Visceral Games. The game launched in 2008 which puts players in control of an engineer named Isaac Clarke who battles Necromorphs (reanimated human corpses) on a space ship. Engineer Isaac Clarke and his crew get stranded on a large, abandoned mining ship. Players take control of Isaac as he and his crew set off on a rescue mission to repair the ship while battling Necromorphs.
- Fight with Weapons and Telekinesis
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Electronic Arts(EA) is now been released for free of Dead Space game on its digital platform Origin for a limited time. The new launched free game program called "On the House" gives away PC games, expansions and downloads for free, without any additional costs. Once the game downloaded, these games and DLC are permanently available, and not part of an instant game collection.
Download the free Dead Space game: https://www.origin.com/en-sg/store/on-the-house-ANW.html
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Narrow your search
Technically Incorrect: A Seattle cyclist is miffed that a woman has parked in a bike lane. He posts a helmet-cam video to YouTube, where many have watched. But who comes out of it better?
Aircraft and military manufacturer Boeing has been granted a patent on a system that is designed to prevent explosion shockwaves from harming a target.
Whether you're a fan of "Star Wars" or pinball, or both, this game is a visual delight that's worth its price.
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While the gameplay has barely evolved, this sequel is just as addictive as ever, and is still a great download for all ages.
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With new birds, new powers, and a ton of new levels to explore in the "Star Wars" universe, Angry Birds Star Wars is a worthy purchase, even if you've played all the previous games.
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A French maker who creates incredible "Star Wars" drones is back with another. This time, he flies a modded Imperial Star Destroyer sure to strike fear into the heart of any Rebel in its path.
For the low, low price of $14.9 million, you can own this crazy mansion in Los Angeles that has a bedroom that transports guests to the icy "Star Wars" planet of Hoth.
A creator of "Star Wars"-themed drones shows off his latest work, a replica of an Imperial Star Destroyer. And it looks awesome.
This week on Crave, we navigate crowds while staring at our phones, catch space junk with fish nets, and ogle a new "Star Wars" taking to the skies in France. Hopefully the Apple drone can save us all. It's an all new Crave show.
The incredible animation "TIE Fighter" by UK artist Paul Johnson shows a "Star Wars" starship battle from the perspective of the Galactic Empire.


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Kanye vs. PETA (2012)
So that's what West and new flame Kim Kardashian have in common! "Theraflu" also caused some grief among PETA reps, who took offense to his lyrics: "Tell PETA my mink is draggin' on the floor." PETA Senior Vice President Dan Mathews retaliated, "What's draggin' on the floor is Kanye's... AFP/Getty Images


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Built this thing this weekend. I've been setting up to have CIP capability with my brewery, so I incorporated cam locks with a CIP spray ball from Brewers hardware that I can swap out on the washer or use it in the kettle.
Parts ListPump
6 gallon bucket
Homer lid 1/2"F x Male camlock1/2"M x female camlock1/2"F NPT spray ball
12" x 1/2" PCV nipple
1" PVC cross
3 1"x1/2"NPT threaded reducer
1 1"x3/4" NPT threaded reducer
1 3/4"NPT X 3/4" hose adapter
2 1/2"x3/8" reducing coupling
2 3/8"x 1/4" barb
24" 1/4" tubing
2 1/4" barb to Flare fitting
1 1/4" Flare Liquid disconnect
1 1/4" Flare gas disconnect


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SAN FRANCISCO, March 25- The former chief operating officer of a major Chinese-American bank in San Francisco was convicted on Wednesday of several criminal counts, including securities fraud, over allegations he concealed deteriorating loans at the height of the 2008 financial crisis. Prosecutors accused former United Commercial Bank executive Ebrahim...» Read More
Richard Hoey, BNY Mellon chief economist; and Michael Santoli, Yahoo! Finance senior columnist, discuss the details of the Justice Department's civil suit against the S&P, and what lead to the crisis.
Attorney General Eric Holder announces the Justice Department is filing a civil suit against Standard and Poor's for alleged fraud on mortgage ratings. And, CNBC's David Faber and Scott Cohn, weigh in.
Floyd Abrams, Cahill Gordon & Reindel partner, discusses the merits of the Department of Justice's civil lawsuit against Standard & Poor's rating agency for alleged ratings fraud.
CNBC's Gary Kaminsky takes a look inside the SEC crime lab, where six terabytes of digital data, emails and documents come in for review every month.
CNBC's Gary Kaminsky takes a look at the massive amount of digital data that pours into the SEC's enforcement division, which is in charge of investigating violations of securities laws.
CNBC's Scott Cohn reports the SEC wants to make it more enticing for employees to report fraud at work, particularly in light of recent revelations about attempts to blow the whistle on Bernie Madoff and Ron Allen.
CNBC's Gary Kaminsky spent time with SEC's Bruce Karpati to learn more about his division, which investigates allegations of fraud committed by investment advisers. Kaminsky reports that if you're breaking the law, the agency will find you.
SAC Capital Advisors expects client withdrawals of at least $1 billion in 2013 as the hedge fund battles intense regulatory scrutiny over insider trading allegations, the Wall Street Journal said on Friday, citing people briefed on the matter.
To Philip Horn, the Braemar Country Club was not just a golf course, it was an extension of his office. Most weeks, Mr. Horn, a financial adviser at Wells Fargo, chatted up potential clients between holes at the upscale club set against the backdrop of the Santa Monica Mountains. The NYT reports.
CNBC's Mary Thompson reports the former hedge fund manager pleaded not guilty to insider trader charges.
CNBC's Mary Thompson reports the latest details on former hedge fund portfolio manager Mathew Martoma's arraignment in New York City on insider trading charges.
Peter Madoff will serve 10 years in prison for his role in his older brother's multibillion-dollar Ponzi scheme, a U.S. judge said Thursday.
CNBC's Kate Kelly reports hedge fund manager Bill Ackman is trying to make the case that Herbalife's numbers don't add up.
Bart Chilton, Commodities Futures Trading Commission commissioner, discusses the Swiss bank's fine and role in manipulating global benchmark interest rates.
Two former hedge fund managers were convicted on Monday of illegal trading in Dell stock based on secret information supplied by research analysts.
CNBC's Scott Cohn reports the latest list of the world's most corrupt countries and those with the "cleanest" rankings.
Former hedge fund portfolio manager Mathew Martoma will have to put up $5 million bail to remain free on insider trading charges.
Former hedge fund portfolio manager Matthew Martoma is due in court any minute on charges of conspiracy to commit securities fraud, with CNBC's Bertha Coombs & Judge Richard Holwell, Holwell Shuster & Goldberg.
Richard Holwell, Holwell Shuster & Goldberg partner, explains the courts view of insider trading, and how the government may build its case against former fund manager, Mathew Martoma, who is accused of making more than $276 million in illicit profits.
Callers touting hurricane-related investments may be scam artists capitalizing on the storm.


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Whirlpool Vantage
Anyone know anything about this high priced washer from Whirpool?? From what I have read, other than it great looks, on board computer to tell you how to treat stains, is there anything special about it over a Cabrio, or Bravos? For two grand, it should come with higher spin speeds, and an option to add more water if needed. The website lacks serious information on this new expensive machine. I am trying to find a Lowes that carries it. LOcal websites say it is currently unavalable, and on sale for 20% off. My guess is, it doesnt wash any better than its "cousins", it just looks better and loaded with more gadgets.
See thread below in which these machines were discussed.
My take: get the top-of-the-line LG top-loader set which is at least as good, has similar features, and costs about half as much.
Here is a link that might be useful: New 2010 Whirlpool washers & dryers


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Political Animals 2012 | TV Show Watchlist
Photos | Cast & Crew | Episode Guide | Video Clips
Drama series following a former first family through political and private conflicts.
Premiered: July 15, 2012
Rating: None
Latest NewsSee all »
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President Garcetti (ADRIAN PASDAR) throws a wrench in Elaine's plan to resign from his cabinet. An unforeseen event leaves the Hammonds - and the country - at a crossroads.
Elaine finds herself torn between staying by T.J.'s side and handling the rescue of a Chinese submarine. Douglas may cross a boundary that could jeopardize his future.
After a grueling overseas tour, Elaine returns to D.C. to find the country in a diplomatic crisis, leaving her sparring with the Garcetti administration.
Threatened by Elaine's skyrocketing popularity, Garcetti (ADRIAN PASDAR) hatches a plan that finds Elaine at odds with her longtime mentor - a Supreme Court justice.
Video ClipsSee all »
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Editors' Picks: On TV
Law & Order: Special Victims Unit9:00 pm | NBC
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Political Animals: Season 1
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Who Let the Dogs In?: Incredible Political Animals I Have Known
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- 7. The Vampire Diaries: A Bird in a Gilded Cage


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The Alternative Dispute Resolution (ADR) Section promotes litigation alternatives by providing a forum for information-exchange and discussion, and serving as a liaison with the judiciary. The Section, led by the Executive Committee, also presents several MCLEs and networking opportunities throughout the year.
Wednedsday April 8, 2015, from 12:00 p.m. - 1:30 p.m.
Utilize Technology to Enhance Your Mediation and Law Practice
Please join the ACBA ADR, Barristers, Labor and Employment, and Trial Practice sections for a presentation on how to enhance your legal and mediation practice through the use of new technology.
Are you often running from the office, to the court, to client meetings? This program will provide better insight on how to use technology in the office and while on-the-go to streamline your practice.
Wednesday, May 27, 2015, from 12:00 p.m. - 1:00 p.m.
Managing the "Money Dance" in Negotiation and Mediation
Please join the ACBA ADR Section and speaker Jessica Notini for an interactive discussion of best practices in mediating and negotiating during the bargaining phase, or the "money dance."
Listening Your Way to Better Client and Lawyer Relationships
Please visit the ACBA Master Calendar for more events
February 2013 e-Newsletter
March 2012 ADR e-Newsletter
Check out these articles submitted by ACBA ADR Section members:
If you would like to submit an article to be posted here or in the ADR Newsletter, please contact Hadassah Hayashi at email@example.com or (510) 302-2200.
The Executive Committee is responsible for planning the section's MCLEs and other networking events throughout the year. The Executive Committee meets the second Wednesday of every month, except for July, August and December. If you would like to receive minutes, agendas, or if you would like to attend an Executive Committee meeting, please contact Hadassah Hayashi at firstname.lastname@example.com or (510) 302-2200.
The Executive Committee
Susan J. Davidson
Frank Russo
R. Camille King
Jenny Kim
Malcom Sher
Teri H. Sklar
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'Shoulder Surfing' Suspect Arrested On Theft, Elder Abuse Charges In Contra Costa County ATM Scam
An ATM scam in Walnut Creek has police warning people to be aware of their surroundings especially when they're withdrawing cash. A suspect has since been arrested for something police call, "shoulder surfing".
How To Protect Your Valuables While Traveling
Learn valuable tips on how to protect your valuables while traveling.
Woman Kidnapped At Gunpoint From Walnut Creek Front Yard, Driven To ATM To Withdraw Cash
A woman was kidnapped at gunpoint from her front yard in Walnut Creek Tuesday morning and driven to a bank where she was ordered to withdraw cash, police said.
87-Year Old Woman Robbed At Richmond ATM Left With Broken Hip From Attack
Police in Richmond are asking for the public's help in identifying a suspect who earlier this month robbed an 87-year-old woman and pushed her to the ground, leaving her with a broken hip.
Oakland Looks To Ban Cell Phone Kiosks To Deter Thefts
Oakland is looking to ban what some say is an easy way for thieves to cash in on stolen cell phones.
ATMs Vulnerable To Hackers After Windows XP Deadline
At midnight, Microsoft stops supporting its Windows XP operating system, opening ATM's around the country up to the possibility of a cyber attack.
Bitcoin ATM Arrives In Mountain View
A Bitcoin ATM is set to be unveiled at a conference in Silicon Valley Thursday, the first of its kind in California for the digital currency.
Woman Interrupts San Mateo Home Burglary, Gets Tied Up By Gunman
A woman who interrupted a midday burglary at her San Mateo home Monday was tied up and held in her home while the suspect used the woman's ATM card several times to retrieve cash, Sgt. David Norris said Wednesday.
Thieves Use Van To Rip ATM Machine Out Of Sonoma County Gas Station
Thieves pried open the doors of a Sonoma County service station and used a van to steal an ATM early Saturday.
Woman Kidnapped At Gunpoint, Driven To ATM From SJ Parking Lot In Craigslist Robbery
A woman who was kidnapped at gunpoint from a big-box store parking lot and robbed Monday in East San Jose had agreed to meet two men she met on Craigslist to buy iPhones, according to police.


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Congratulations to Sue of Quilted Hugs! Please contact me with your address so I can get your package in the mail this week.
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I am a mom of two that now resides in San Antonio area. I moved from Hawaii a year ago. I am a full-time student that works part time at the college I attend as a work-study. When I have time, I quilt, make jewelry, and now craft with my new silhouette cameo cutter. View all posts by Kim