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Sept. 24, 1968 H. JACOBS ET AL MILLIMETER WAVE IMAGING SYSTEM 5 Sheets-Sheet l Filed March lO, 1967 lNvENToRs,
HAROLD JACOBS RONALD c. HOFER a GEORGE E. MORRIS.
ATTORNEYS Sept. 24, 1968 H, JACOBS ET A1. 3,403,399
MLLIMETER WAVE IMAGING SYSTEM Filed March 10,3196? 5 Shfa'es--Sheerl 2 4 5 6 7 8 L MILLIMETERS SCANNING ''nl To c.R.T.
7' EIN- i INVENTORS, HAROLD JACOBS RONALD C. HOFER 8 GEORGE E. MORRIS.
Sept. 24, 1968 H JACOBS ET AL 3,403,399
MILLIMETER WAVE IMAGING SYSTEM 'Filed March lO, 1967 5 Sheets-Sheet I5 FIG- 5 I'O EIN .5
L MILLIMETER SCANNING M M WAVES w T0 AMPLIFIER CRT.
AT TORNEYS Sept. 24, 196s H. JAcoBs E'r Al. 3,403,399
MILLIMETER WAVE IMAGING SYSTEM Filed March lO, 1967 5 Sheets-Sheet 4 FIG. 8
IE c IN INVENTORS, HARULD JACBS RONALD C. HOFER GEORGE E. MORRIS.
Sept. 24, 1968 H. JACOBS ET Al- MILLIMETER WAVE IMAGING SYSTEM Filed March lO, 1967 5 Sheets-Sheet 5 S @E @E United States Patent Oce 3,403,399 Patented Sept. 24, 1968 3,403,399 MILLIMETER WAVE IMAGING SYSTEM Harold Jacobs, West Long Beach, NJ., Ronald C. Hofer,
Brookville, Ind., and George E. Morris, Long Branch,
NJ., assignors to the United States of America as represented bythe Secretary of the Army Filed Mar. 10, 1967, Ser. No. 623,194 14 Claims. (Cl. 343-17) ABSTRACT OF THE DISCLOSURE A visual presentation of -a millimeter-wave imageV formed on a layer of dielectric material or semiconductor of critical geometry is achieved by controlling over a wide range the magnitude of the millimeter wave radiation reected from said layer by sequentially changing the conductivity of discrete regions of said layer under the inuence of external scannin-g means, detecting the radiation so reflected, and applying the detected output to a visual indicating device the scanning of which is synchronized with said scanning means.
Cross-references to related applications One of the reflecting modes of operation of the system according to the invention relies upon reflection of energy from a semiconductor associated with a xed reflector. Such a reflection technique is shown in an application of Harold Jacobs, Ser. No. 504,295, now Patent No. 3,305,863 entitled Variable Reflector of Electromagnetic Radiation, filed Oct. 22, 1965.
Background of the invention This invention relates to a millimeter wave imaging system which will present a visible image of objects upon which millimeter wave energy is incident. As used in this application, millimeter wave energy shall be construed to include energy lying in the microwave region, as well as in the far infrared region of the electromagnetic spectrum.
The need exists for a device by means of which one can see through fog, heavy rain or snow; the most difficult problem is visibility through fog. Despite the numerous television or panel vision systems presently using light at optical frequencies or infrared radiation, the scattering by water particles in the fog renders these systems impractical. Radar light imaging at the longer microwave wavelengths for fog penetration is quite possible;
in principle, however, the bulk, complexity and cost of t radar viewing systems for image definition has made this approach impractical. At this time, airplanes and vehicles have little protection in heavy fog other than altimeters and radar ranging and have no visual means of imaging through fog for protective purposes so that collisions of both planes and ground vehicles still occur in fog. Furthermore, the problem of military surveillance in `deep fog has not yet been solved in searching for troops, transporting vehicles, aircraft or missiles.
In accordance with the invention, electromagnetic radiation in the millimeter or submillimeter wave region impinges upon one or more targets. A portion of this radiant energy is reflected from the target and is collected by a lens or parabola and focused onto a semiconductor panel. The conductivity of discrete regions of the semiconductor panel is changed sequentially by means of a scanning light beam, an electron beam, or by any other mechanism which provides control of the conductivity in `localized regions of the semiconductor. Scanning with a light beam has been found to be the simplest and most economical means for producing conductivity changes in a semiconductor panel.
As the scanning light beam momentarily illuminates a given region of the semiconductor, the conductivity of the semiconductor in that region is increased. If the semiconductor panel of a given conductivity is cut to a -critical thickness, corresponding to the frequency of the millimeter wave radiation, a relatively large change in reflection of incident millimeter wave radiation can be achieved as the region goes from the dark or quiescent condition to the illuminated condition. If the conductivity of a given region of a semiconductor is increased, as by illumination with light from a scanner, the proportion of the millimeter wave energy incident upon the panel which is absoibed by said region of the panel increases. In other words, the amount of millimeter wave energy incident upon said region of the panel, if any, which is reflected from said region is increased. Millimeter wave detecting means is set up in front of the semiconductor panel to detect the millimeter wave energy reected.
As momentary and sequential scanning of discrete regions of the semiconductors occurs, changes in the millimeter wave energy emanating from these discrete regions are ydetected by the millimeter wave detector, amplied and applied to a visual display device. For example, if a cathode ray oscilloscope is used as the visual display device, the amplified output of the millimeter wave detector can be applied to the Z axis of the cathode ray oscilloscope and the position of the electron beam of the cathode ray oscilloscope can be correlated with the position of the discrete region of the semiconductor panel undergoing an increase in conductivity by synchronizing the scanning light beam with the vertical and horizontal deflection circuits of the oscilloscope. When the electron beam is made to scan a raster in synchronization with the line by line scanning of the light beam on the semiconductor, and when the electron beam intensity of the cathode ray oscilloscope is modulated with the fluctuating signal received at the millimeter wave detector, the entire millimeter wave image at the semiconductor panel can be converted to a visual display.
A system for converting an imaged formed by infrared radiation to a visible ima-ge is discussed in an article, Electronic Scanning System for Infrared Imaging by M. E. Lasser, P. H. Cholet, and R. B. Emmons in Proc. IRE, December 1955, pages 2069-2075. In this system, an infrared image of an object to be viewed is formed on a semiconductor infrared-transparent window at one end of a first tube. A second tube joined to the first tube contains an electron gun which provides a beam which can be focused on the semiconductor window. When the electron gun is inoperative, the infrared radiation continues through the semiconductor window and is intercepted by an infrared detector. When the electron beam is turned on and is swept over the semiconductor, on the other hand, the conductivity of the semiconductor is increased and transmission of infrared radiation through the semiconductor is decreased.
Summary of the invention An object of this invention is to provide an optical imaging device which is simple in nature, low in cost, and in which an observer can obtain a visual moving picture of the terrain and surrounding environment, even in heavy snow, rain, or deep fog. The system of the invention uses millimeter wave energy which has been found by tests in experimental all-weather communication links to be characterized by relatively little atmospheric attenuation.
One of the disadvantages of the previously mentioned system of Lasser et al. is that the change in the transmission of infrared radiation is comparatively small and requires extremely large changes in conductivity to obtain usable effects. This, in turn, necessitates use of a rather high energy source of visible light or an electron beam to create the required density of free carriers. Also, the conductivity a is inversely proportional to frequency squared so that a would be lower as the frequency increases; this would further worsen the problem presented in the Lasser et al. system.
Instead of controlling the amount of millimeter wave energy transmitted through the semiconductor, as in the system of Lasser et al., and detecting variations in transmission of radiation, the system of the invention is predicated upon controlling the amount of millimeter wave energy reflected from the semiconductor panel and sensing the variations in reflected millimeter Wave energy.
It has been found that, for a given level of energy used in scanning the surface of the semiconductor panel, the resulting change in the amount of millimeter Wave energy reflected from the semiconductor panel is greater than the change in energy transmitted through said panel, such as would he obtained with the system of Lasser et al. In addition, in the millimeter wave imaging system of the invention, selection of a critical thickness of a semiconductor panel allows one to maximize the change in amount of millimeter wave energy emanating from the semiconductor With change in conductivity. In other words, by using a reflection system and by making the semiconductor thickness critical, the modulation depth is superior to that obtained with the transmission system of Lasser et al. already described.
Since the amount of optical energy needed for changing the level of the millimeter wave energy emanating from the semiconductor panel a given amount is much less than with the electron beam bombardment used by Lasser et al., a much simpler scanning system can be used; in one instance, the light from a small flashlight bulb was found to provide sufficient conductivity change for satisfactory system operation.
AS Will be described in greater detail subsequently, there are three basic techniques for using the reflecting mode of operation.
First, one may control the reflection of millimeter wave energy from the front face of a semiconductor panel of critical thickness equal to an integral number of half wavelengths (the wavelength here being the Wavelength for the particular semiconductor used and differing from that of free space by the reciprocal of the square root of the dielectric constant of the semiconductor). The amount of millimeter Wave energy directed at the detector in the quiescent state (no scanning) is considerably less than would be the case in a system, such as that of Lasser et al., which operates in the transmission mode. This results in an improvement of the signal-to-noise ratio and minimizes adverse effects upon coherent interference present in the transmission mode of operation. Moreover, for a given change in signal brought about by scanning, a greater change in reflection coefficient is achieved than with the transmission mode.
A second reflection mode of operation involves placing a fixed back reflector in contact with the semiconductor panel. The thickness of the semiconductor is chosen to be an odd number of quarter wavelengths, the wavelength again being the wavelength for the particular semiconductor being used. The choice of which multiple of a quarter wavelength to be used will be determined by the properties of the material, such as a quiescent (dark) conductivity a and the dielectric constant eR and a choice is made to give maximum response. By addition of the back reflector to the semiconuctor panel assembly, the sensitivity of this second reflection mode of operation is superior to that of the first reflection mode of operation described.
A more sophisticated reflection mode of operation involves replacing a fixed back reflector by a movable reflecting screen spaced from the semiconductor panel by an amount which can be varied to provide minimum reflection in the quiescent condition of the panel. T his 1 tauh aL=- Where a is the attenuation constant in the semiconductor and eR is the dielectric constant of the semiconductor, from which 1 OlL tamil-IWL N/fR The term a is given by the following relationship Where fr is the conductivity of the semiconductor in reciprocal ohm-meters and Zs is the bulk impedance of the semiconductor which is equal to the impedance of free space divided by the square root of the dielectric constant of the semiconductor. Consequently,
For a given semiconductor material, aL is a constant.
It should be noted that the thickness L of the semiconductor still is critical, but that it can be adjusted for maximum change in reflection coeflicient with changes in illumination intensity. The change in conductivity with changes in illumination intensity is chiefly governed by the materal properties and by the thickness L. The foregoing relation for L is used to find a proper L for a given o- Which will give the minimum reflection in the quiescent condition. Consequently, the change in ER/EIN, the reflection coeflcient, is maximum for a given change in a when said relation is satisfied. Should values of L be used which do not satisfy this L=constant relation, then the amount of quiescent reflection will be more than the minimum value possible; and, hence, the change in ER/EIN will be less for a given change in conductivity. It will be noted also that the thickness L now need not be strictly held to (Zn-I- l )ks 4 as in the case of the reflection mode with fixed back reflector. Now that values of a' and L have been established, the spacing M between the reflecting screen and the semiconductor is adjusted to the Value given by second relationship Where )ts is the wavelength in the semiconductor o is the propagation constant in free space and equals the ratio of 21r and the Wavelength ko in free space. Values for M which give minimum reflection must satisfy the relation obtained from the equation From this transcendental relationship, one can obtain values of M which will provide for optimum reflection. The solution for M in this transcendental equation will be spaced at intervals of one-half wavelength in free space.
By choice of the value of M, one can position the movable reflector to obtain the minimum reflection for the quiescent condition. With the movable reflector system, any semiconnductor, regardless of its quiescent or dark conductivity, can be selected so long as the first mathematical relationship is satisfied. The adjustment of M will compensate for the fact that the thickness L is not an odd number of quarter wavelengths. The adjustment of the spacing M thus permits tuning for zero reflection and results in a much more flexible millimeter imaging system.
Brief description of drawings FIG. 1 is a system diagram showing a first embodiment of the invention;
FIG. 2 shows curves illustrating relationship between the reflection coefllcient and thickness of a semiconductor such as used in the system of FIG. l;
FIG. 3 is a fragmentary view showing a modification of the system of FIG. 1;
FIG. 4 is a view explaining reflection of energy from a semiconductor having a fixed metal reflector backing the semiconductor;
FIG. 5 illustrates the manner in which the reflection coefficient varies with thickness of a semiconductor, for various values of conductivity, for the case of a semiconductor backed by a fixed reflector;
FIG. 6 describes another embodiment of the invention wherein the semiconductor panel comprises a fixed reflector;
FIG. 7 is a view explaining principles of operation of a four-layer reflection system including a semiconductor spaced from a reflector;
FIGS. 8 and 9 show the relationship between the reflection coefficient and the normalized spacing between the reflector and the semiconductor, for various values of conductivity, of a system such as shown schematically in FIG. 7;
FIG. 10 shows the relationship between the reflection coefficient and the conductivity of the semiconductor when used in the system shown schematically in FIG. 7, with the movable reflector positioned to give minimum reflection in the quiescent condition;
FIG. ll shows a graph of experimental data indicating the relationship between the relative reflected power and the reflector spacing, for the system shown in FIGS. 7 and 13;
FIG. l2 is a curve showing a comparison of the theoretical and experimental values for the relationship between the relative reflected power and the deviation in spacing between reflector and semiconductor, in normalized units, from the location at which minimum reflection is attained for the system shown in FIGS. 7 and 13; and
FIG. 13 is a system diagram showing the preferred embodiment of the invention which employs a movable reflector.
Description of the preferred embodiments A millimeter wave imaging system is shown in FIG. l. This system makes use of the fact that the conductivity of the semiconductor of FIG. 1 can be changed in regions impinged upon by the millimeter wave radiation by simultaneous scanning of the semiconductor with a visible light beam, by an electron beam, or, in some cases, by direct injection of excess minority carriers. As the conductivity of the semiconductor` is varied by electronic means, reflectivity of the semiconductor device will change. In this reflecting mode, some of the incident energy on the semiconductor is transmitted through the semiconductor, while portions of the incident energy is reflected from the interface of free space and the semiconductor. The magnitude of the reflection coefllcient,
that is, the ratio of the reflected electric field intensity ER to the electric field intensity EIN in air incident upon the semiconductor surface is a function of the conductivity fr and of the thickness L of the semiconductor. Typical curves of the reflection coeflicient ER/EIN versus thickness L of the semiconductor, for various values of conductivity fr, are shown in FIG. 2. These curves were obtained for a germanium semiconductor at 1010 Hertz. The wavelength )is in the semiconductor at l010 Hertz thus is 3 10s 1 101 E #E12 V16 Background material relating to these curves can be found in an article by-H. Jacobs, F. A. Brand, I. D. Meindl, S. Weitz, R. Benjamin and D. A. Holmes entitled New Microwave Techniques in Surface Recombination and Lifetime Studies" in April 1963 Proc. IRE, pages 581- 592.
It will be noted from FIG. 2 of the drawing, that, when the semiconductor thickness L is given by L=1z}\s/ 2 where n=1, 2, 3 there will be minimum reflection.
When L is an odd multiple of quarter wavelengths long, however, that is, when where 11:0, l, 2, 3, the reflection of energy is maximum. In practice, one would cut the semiconductor panel to a thickness L=n7\s/2, n being chosen to achieve minimum reflection. In the example shown by the curves of FIG. 2, this would means that L=3.75 millimeters. It will be noted that, in the example illustrated in FIG. 2, the maximum swing in the coefllcient of reflectively ER/EIN is attained, for a given change in conductivity, when the thickness L of the semiconductor equals s/Z. In the example of FIG. 2, ER/EIN changes from 0.37 to 0.68 when a changes from 2 to l0 (ohm-meterVl, representing an increase of reflected energy by a factor of In the system of FIG. l, millimeter wave energy from a millimeter wave source 14 strikes an object 15 and a portion of this energy is reflected from the object. The reflected millimeter wave energy is collected and brought to a focus onto a semiconductor panel 20 of thickness L by a large diameter condensing lens 18. The diameter D of the lens 18 will be approximately equal to the ratio of the radiation wavelength ko and the angular separation in radians of two objects to be separated or resolved. For example, if A0 is in the region of 1 to 3 millimeters, and the lens diameter were one meter, AO/D would range from .O01 to .003 radian and one could resolve distances from l to 3 feet at one thousand feet distance from lens to object.
The semiconductor panel can be a layer of dielectric material the conductivity of which can be varied by external excitation. Examples of such a material are semiconductors such as germanium, silicon, or cadmium sulfide. The semiconductor should have high resistivity and long lifetime for excess minority carriers, germanium meets these requirements. More important, however, is that the thickness of the semiconductor be an integral number of portions of a wavelength in the semiconductor to optimize transmission of millimeter wave energy through the semiconductor panel and to increase the change in reflection coefficient ER/EIN with changes in semiconductor sensitivity.
As the millimeter wave energy irnpinges upon the semiconductor panel 20, a millimeter wave image (variable energy density distribution) will be formed on the semiconductor of configuration depending upon the configura- 0.0075 meters: 7.5 mm.
tion of the object being illuminated by the millimeter wave source and of intensity depending in part upon the refectivity of the various portions of the object 15. As mentioned earlier, the conductivity a of the semiconductor panel can be increased by directing light from a light source 22 onto the semiconductor panel. As shown in FIG. 1, the light is caused to scan the front Surface 23 of the semiconductor panel 20 so that the conductivity a of a first region of the panel 2f) is increased momentarily as the light scans that given region. Millimeter wave energy reflected from the semiconductor panel 20 can be picked up, as by a horn 4S, and fed to a microwave diode detector 35 by way of a waveguide 49. The horn and waveguide combination, although disposed in front of the semiconductor panel 20, is quite small in area compared with the area of opening of lens 18 and will not appreciably block the energy reflected from the object or objects from impinging upon the semiconductor panel 20. The output of detector 35 is amplified by amplifier 46 and applied to the Z axis of the cathode ray tube indicator 40. The scanning may be accomplished by a fiying spot scanner 25 which is capable of detecting a beam of light in a television-like raster by mechanical or electromechanical means. An example of such a scanner is the moving plane mirror spot scanner shown in FIG. 2 of an article Infrared Search System Design Considerations by R. H. McFee appearing in the September 1959 Proc. IRE and described at pages 1550-1552 of said article. The scanner 25, for example, may comprise a mirror 26 disposed in the path of light energy from light source 22; the mirror 26 can oscillate about one axis while nodding about another axis perpendicular to the first axis. It is possible, of course, to use two separate mirrors, each scanning independently about two mutually perpendicular axes. Each time the mirror 26 has reached a position such that the light spot is directed onto a certain location on the semiconductor panel 2), for example, the upper lefthand corner of panel 20, switches 31 and 32 may be closed to trigger the necessary horizontal and vertical sweep voltages for the cathode ray tube 40. These sweep voltages are generated by horizontal sweep circuit 41 and vertical sweep circuit 42, respectively. The cathode ray tube sweep thus is synchronized with the motion of the light scanner. If there is millimeter wave energy incident upon the aforesaid first region of the semiconductor panel thus illuminated by light from the scanner, then the amount of millimeter wave energy absorbed by the first region of the semiconductor panel 20 will increase. This follows from the fact that the light has increased the carrier concentration of the semiconductor, thereby increasing the conductivity a of the semiconductor. Less millimeter wave energy will be reflected from the light-illuminated first region of the panel 20 and the output of detector 35 will diminish during the period that light is incident upon the first region of semiconductor panel 20. As the light spot leaves said first region, this region re. turns to its previous conductivity condition. As the moving spot of light strikes a second discrete region of the semiconductor panel, the value of a of this second region will be increased. If millimeter wave energy impinges upon this second region, partial absorption of such energy will again occur. Of course, if there is no millimeter wave energy incident upon the aforesaid first and second regions, the variation in the output of detector 35 will be zero. It should be noted that other types of scanning systems may be used; such systems are well known in the art.
In order to obtain a presentation of the microwave image on the semiconductor panel 20, a visual indicating means such as cathode ray tube must be used. The output from detector 35 is connected to the intensity control grid of cathode ray tube 40, while the outputs of the sweep generators 41 and 42 are connected to the deflection circuits of the cathode ray tube so that, at any given instant, the position of the phosphorescent trace on the cathode ray tube screen corresponds to the position on the semiconductor panel 20 at which a spot of light from scanner 25 and millimeter wave energy are simultaneously incident.
If the thickness of the semiconductor panel were AS/Z or 3.75 millimeters, in the case of a germanium panel at 1010 Hertz, it is evident from the curves of FIG. 2 that, for regions of the panel not illuminated by the scanning light beam, a relatively small amount of the microwave energy incident on the panel would be reflected from the panel 20 and be detected by detector 35. If the same region of said panel were illuminated with light, however, the conductivity a of that region of the panel would increase and the amount of microwave energy reliected would increase substantially. Consequently, as each discrete region of the semiconductor panel is scanned by light, the input to the intensity control grid of the display tube 40 would increase. With this setup, therefore, there is no need for an inverter, as would be the case with operation in a transmission mode, similar to that shown by the Lasser et al. article.
It should be noted from the curves of FIG. 2 that the largest change in refiectivity ER/EIN, for a given change in fr, occurs when the thickness L of the semiconductor panel is s/Z. The ratio of the change in refiectivity and the ychange in conductivity at L= \s is not as large as the same ratio of L= \s/2. Moreover, it will be noted that the swing in the refiection coefficient encountered when L=\S/4, 3x5/4 and 5kg/4 is much less than the swing encountered when L= \s/2 and xs. Finally, the manner in which refiectivity changes with increasing conductivity 0- is inverted as the thickness L is changed from an even multiple to an odd multiple of quarter wavelength, and Vice versa. For example, at L= \S/4, the reflectivity decreases from .82 to .76 as a is increased from 2 to 10. At L=?\S/2, however, the reflectivity increases from .37 to .68 as a is increased from 2 to l0.
In FIG. 3, the scanning light beam from scanner 22 is indicated as illuminating the back surface 24 of the semiconductor 20, instead of the front surface, as in the system described in FIG. 1. It is immaterial, however, which of these two surfaces of the semiconductor is illuminated.
In an lapplication of Harold Jacobs, Ser. No. 504,295, entitled Variable Reflector of Electromagnetic Radiation, filed Oct. 22, 1965, a three-layer reflection system is shown and described which includes air of propagation constant 7 and wave impedance Zm, a semiconductor with propagation constant I and wave impedance Z02 and a metal refiector in the order named. Such a system is shown in FIG. 4 of the drawing and `also is described in an article Semiconductor Reflection Type Microwave Modulator, by H. Jacobs, R. W. Benjamin and D. A. Holmes, appearing at pages 699-708 of Solid-State Electronics, 4Pergamon Press, 1965, vol. 8. The electric field of the electromagnetic radiation incident upon the semiconductor is indicated as EIN. The wave undergoes multiple refiections in the semiconductor and the refiected wave is designated as ER. The ratio ER/EIN, that is, the reflection coefficient, is a function of both the thickness L, dielectric constant ER, and conductivity a of the semiconductor. The semiconductor is mounted in contact with a metal reflector. To measure performance of such a system, the semiconductor of thickness L can be mounted at the closed end of a waveguide, as indicated in FIG. 4. Curves have been obtained with such an arrangement showing the manner in which semiconductor reflectivity ER/EIN can be varied as a function of both the semiconductor conductivity oand the thickness L of the semiconductor. Typical curves are shown in FIG. 5 for a silicon sample with an operating frequency of 1010 Hertz, corresponding to a free space wavelength of 3 centimeters. The dielectric constant of silicon is assumed to be l2 and the wavelength in siliicon is 30/\/1 2=8.67 millimeters.
From transmission line theory, the minima in the retlection coefficient ER/EIN can be shown to occur near the odd quarter wavelength points and the smaller the conductivity the better is the Iapproximation. In FIG. 5, the refiection coefficient is unity at tr=0. In other words, there is no loss at 1:0 and all of the incident energy is reflected from the metallic reflector. In FIG. 5, the minimum reflectivity at each value of a occurs when the semiconductor thickness is substantially a quarter wavelength in the semiconductor at the operating frequency. At a equal 2, the minimum reflectivity occurs when the thickness L of the semiconductor is 2.2 millimeters. It is shown in the aforesaid Solid-State Electronics article that the reflectivity ER/EIN and consequently, the reflected energy (ER/EIN)2 will be a minimum when the following rela- 4tion occurs:
Where Zs is the impedance of the infinite semiconductor and is equal to 377, the impedance of free space, divi-ded by the square root of the dielectric constant eB of the semiconductor. From the above relation, one finds that =mnh t L 2 ER from which 2 1 z... -1 aL ZB tanh wl/T Having solved for the optimum product of thickness L and the conductivity a of the semiconductor, one can obtain the desired conductivity for minimum reliection occurring at the first order quarter wavelength. In the eXample shown in FIG. 5, that is, a value of L equals 2.2 millimeter, a can be calculated as being 1.8. If a were varied from to 1.8, therefore, the reflectivity ER/EIN could be swung between 1 and O. If, on the other hand, L were retained at 2.2 millimeters and the conductivity were varied between 2 and 6 the reflectivity would be swung between 0.06 and 0.53 or about 9 fold. This corresponds to an increase in reflected power (ER/EIN)2 of about 80 fold.
In practice, then, one using this mode of operation usually would select a semiconductor which is an odd number of quarter wavelengths thick and calculate the value of a necessary to satisfy the formula for UL p1'e viously mentioned. The millimeter imaging system for this mode of operation, shown in FIG. 6, would be similar to that shown in FIG. 3, except that the semiconductor panel 20 of FIG. 3 is replaced by the semiconductor panel 20 of FIG. 3 is replaced by the semiconductor panel assembly 200 shown in FIG. 6 wherein the semiconductor slab 50 is backed by a metallic reliector 52, which may be a metal coating.
In the reflection system shown in FIG. 6, another example of means for directing the energy reflected from the semiconductor panel assembly to a detector is shown. As shown in FIG. 6, the millimeter wave energy is focused by means of a collimating lens 18A onto the semiconductor S0. Millimeter wave energy reflected from the semiconductor 50 strikes the beam splitter 55 and a por tion of this energy is reflected at right angles and is directed, by means of a lens system comprising lenses 57 and S, to a horn 48A and fed via a waveguide 49A to the millimeter wave detector 35A. The output of detector 35A is amplified by amplifier 46A and supplied to the cathode ray tube indicator. The scanning light beam is indicated in FIG. 6 as illuminating the front surface of the semicon ductor 50; however, as already explained, the scanning light beam could be made to illuminate the rear surface of the semiconductor 50, provided that the back reflector 55 were made of a perforate material capable of transmitting light energy, but totally reflective of millimeter wave energy.
It should be understood that the beam splitter arrangement shown in FIG. 6 could be used in the system of FIG. 1 instead of the horn and waveguide collecting system shown in FIG. l, and that the latter arrangement may be used instead of the beam splitter and lens system in the millimeter wave imaging system of FIG. 6. The invention is not limited to any specific means for capturing the millimeter wave energy reflected from the semiconductor panel or to any specific means for directing this reected energy to a suitable millimeter wave energy detector.
While the three-layer reliection system, either with or without a reflector, and with the semiconductor panel cut to a critical thickness, is an effective system, the modulation depth sometimes leaves something to be desired and the level of minimum transmission always present often is highergthan one nwould like. Itis desirable that substantially total absorption of millimeter wave energy in the semiconductor panel occurs when the semiconductor panel is in the minimum conductivity condition and that one be able to tune for minimum reflection to compensate for practical departures of a and L of a given semiconductor from calculated values.
In the four-layer reflection system about to be described, consisting of air, a semiconductor panel, an air gap and a metal reflector, millimeter and submillimeter waves can be substantially completely absorbed by the semiconductor if the conductivity and dielectric constant of the semiconductor, as well as the thickness of the semiconductor and the air gap length L, are chosen properly.
This system may be considered as a transmission line, as indicated in FIG. 7, comprising a region I of air with propagation constant I`=u|jo through which the millimeter wave energy is travelling, the semiconductor panel II of thickness L and propagation constant fy=a+jb upon which the radiation falls, a region Ill (air gap) of thickness M and propagation constant 1`=|j0 (or air a is assumed equal to zero), and a region IV or metal reliector, which, in practice, is adjustable and may be in the form of a fine metal wire mesh. The electric field incident on the semiconductor panel is represented as EIN and the reliected field as ER. Refiection and transmission at the various layers is indicated by arrows in FIG. 7.
This system is analyzed in considerable detail in a U.S. Army Electronics Command Technical Report ECOM- 2774 of October 1966 by Harold Jacobs, George Morris and Ronald Hofer entitled An Interferometric Effect With Semiconductors in the Millimeter Wave Region.
In one example, calculations were made for a frequency 70 gigaHertz and a germanium semiconductor panel. The available semiconductor will have some quiescent or dark conductivity. One of the relationships which must be satisfied in order to obtain minimum reflection of millimeter wave energy from the semiconductor when the semiconductor is in the dark condition is aL=tan1 1 2 \/R where ER is the dielectric constant of the semiconductor being used. The term a is given by 11 Since, for germanium, 613:16 and Zs:377/\/16:94.25,
2 I -1 L 94.25 tanh m aL:0.0212 tanh1 0.25 :0.02 12 .255) :0.00540 VVare Vshown in FIG. 10. The curves of FIG. l represent calculations made for an operating frequency at 70 gigaHertz and a semiconductor of germanium cut to a thickness L:9/4 \s. This represents an integer m:4 in the expression Similar curves could be obtained for L:0, 0.25am 0.75As, etc., where the n value is other than 4. It will be noted that the reflectivity is a minimum when the air gap length M is 0, 0.5%0, Ao, 1.5M, etc. The condition M:0, of course, corresponds to the case of a reector attached to the semiconductor, and is the case described in FIGS. 4 to 6.
By choosing an odd quarter Wavelength of thickness L, one is able to obtain minimum reflection at half wavelength intervals of air gap M, provided, of course, that the relationship for L given above is satisfied. Minimum reflection, for a given a, occurs for air ygaps of 0x0, 0.5 \0, A0, 1.5 \0, etc., and the lowest reflection obtainable at these particular air gaps, in the example illustrated in FIG. 8, occurs when a:2.24815, since, for a semiconductor precut to L:9/4 \S:9/4(1.072):2.4 millimeters, this value of u satisfies the relationship that aL:0.00540.
The value lof L selected will depend upon the application of the millimeter wave imaging system. The smaller one makes L, the larger is the viewing angle. In applications where one desires only a limited eld of view, L would be chosen reasonably large; on the other hand, in applications in which a wide angle view is needed, L would be made fairly small.
In many practical cases it may be desirable to use a semiconductor which is not exactly an integral multiple of odd quarter wavelengths long, either because a semiconductor with a thickness of is not available or is not readily machineable. Furthermore, one `may have available a semiconductor of some quiescent conductivity which cannot be tailored to a semicond-uctor thickness, or vice versa, so as to satisfy the relationship For example, suppose one were able to cut the semiconductor slab represented by the curves in FIG. 8 to a thickness L:2.4 millimeters, it would be necessary to specify a quiescent conductivity of 2.24815. It may not be easy to procure a semiconductor having this specified value of conductivity. On the other hand, suppose one were to have a semiconductor slab which happened to have a:2.24815, one might not have facilities for cutting this slab to a thickness exactly equal to 2.4 millimeters. It is for these reasons that the system using a movable reflector is of great practical significance.
In one example of a movable reflector system, calculations were made using a germanium semiconductor having a quiescent conductivity of 3.6 (ohm-meter)1. It is necessary now to `calculate the thickness L to which the semiconductor is to be cut. The frequency of millimeter wave radiation in this example is 70 gigaHertz. As already mentioned, one of the relationships which must be satised in order to achieve minimum reection of millimeter wave energy ifrom the semiconductor is that 2 mnh-1L rL= ZH 6R From previous calculations, `the value of aL:0.00540. Since the conductivity of the semiconductor selected was 3.6 (ohm-meter)1, the thickness L is equal to It should be noted that, at 70 gHertZ, the wavelength As in the germanium semiconductor panel is or 1.50X10-3 meters 7 X 1010 :4.28 X 10-3 ne 4- 1.07 X 10-3 meters: 1.07 millimeters In other words, L-:1.405)\s and is not a multiple of quarter wavelengths. In order to compensate for this fact, it is `necessary to adjust M to satisfy the additional relationship the term mr showing the repetitive nature of the tangent function. Solving for M,
1 nk, Veg tan L 2 Substituting known values M=0.631 tane-0345+? It will be noted that the tangent values are repetitive at intervals of 1r radians, so that in the equation, values of M dilering by n10/2 are possible. When n equals zero, the distance M comes out negative, in
the example given. Although this solution is physically unrealizablc, one can obtain realistic solutions when n is other than zero. For example, if 11:1, the spacing M=O-2l+4.28/2=*0.21i2.14=1.93 millimeters. This value corresponds to a ratio of MMO: 1.93/ 4.28=0.46.
FIG. 9 shows typical computer curves of reflection coefficient ER/EIN as a function of normalized air gap X :Mxo between semiconductor panel and movable reflector, for values of r from 0 to 14. The curves of FIG. 9 are for a germanium semiconductor at a frequency of 70 gHertz. The wavelength As in the germanium semiconductor then is 1.072 millimeters. From the curves, it is evident that a minimum reflectivity ER/EIN can be obtained at half wavelength intervals of the air gap (mediumrIII of FIG. 7), that is, when X=0.5, 1.0, 1.5. As the conductivity a of the panel (medium II) is changed by visible light, the reflectivity of the panel will change. For example, if the air gap M is made 0.5 l.072=0.536 millimeter, then, as a increases from 2.248 to 16, the reflectivity increases from to 0.62. A decided change in reflectivity can also occur when the normalized spacing X is increased to about 2.15 -|-1.94=4.09 millimeters (corresponding to a normalized spacing X=4.09/4.28=0.96). The calculated curves of FIG. 9 show that the minimum reflection points are spaced at intervals of half wavelengths in free space.
The manner in which the reflectivity of the semiconductor panel varies with conductivity is shown in FIG. 10. The specific curve of FIG. 10 is for a system operating at 70 gHz. with the semiconductor panel being cut to a thickness of 1.485 millimeter and the air gap or spacing M between the semiconductor and the movable reflector being 0.455 wavelength, one of the Values of X shown in FIG. 9 which provide minimum reflection in the quiescent condition. The reflectivity ER/EIN is seen to increase progresjvely as the conductivity increases from 4 t0 20 (ohm-meter)1.
FIG. 11 shows the relative reflected power in db-lO log (ER/Em)2for various spacings, in inches, of the reflector from the semiconductor. This curve is a plot of experimental data derived for operation at 70 gHz. with 6:3.6 reciprocal ohm `meter and L is equal to 1.5() millimeters with a germanium panel. The zero db point represents the point of maximum reflected energy detected by the millimeter wave detector. It should be noted that the reflected power is sharply reduced when the air gap M is an integral number of wavelengths and that the minimum reflected power may be obtained for reflected spacings at intervals of half wavelengths.
FIG. 12 illustrates a comparison of experimental with theoretical (computer) values for the relationship between relative reflected power and the deviation in the spacing between the movable reflector and the semi-conductor, in normalized units X :M/ A0, from the location at which minimum reflection is obtained. This curve indicates clearly the agreement between the calculated results and those actually obtained in practice. This curve is related to that of FIG. 11, except that it shows the relative reflected power as a function of deviation from the null tuner location rather than the reflected lpower in terms of the actual location of the tuner or reflector. In FIG. 12, the curve is drawn through theoretical data points and the experimental points are indicated by a circle.
A reflection type millimeter wave imaging system using a movable reflector is shown in FIG. 13. As in the system of FIG. l, the millimeter wave energy from a source 14A floods an object 15A which, in turn, becomes a source of millimeter wave radiation. The millimeter wave energy reflected from object 15A is focused by lens 18B onto the semiconductor panel 50A of panel assembly 200A and a millimeter `wave image is absorbed in semiconductor panel 50A. A reflector 52A is positioned in back of semiconductor panel 50A and is adjustable mechanically, as indicated schematically by the heavy arrows, so that the air gap or spacing M between the reflector 52A and the semiconductor 50A can be varied. The reflector 52A can be a solid movable reflector, disposed adjacent the back surface of the semiconductor panel; preferably, however, the reflector 52A is in the form of a wire mesh having openings of such size as to be transparent to light energy but substantially totally reflective of millimeter wave energy. If a perforate reflector is used, as shown in FIG. 13, the light scanner 22A, which may be similar to the scanner described in connection with the system of FIG. l, can be located behind the reflector and the scanning light beam directed through the mesh reflector onto the back surface of the semiconductor. Since the conductivity change accomplished in the semi-conductor is a volume effect, it is immaterial 'whether the light beam scans the front or the back surface of the semi-conductor panel. In other words, the scanner may be positioned in front of the semiconductor panel 50A, that is, between the lens 18B and the semi-conductor panel 50A. The scanning light beam, passing through the mesh reflector 52A, creates localized regions of increased conductivity in the semiconductor panel 50A. When the millimeter wave energy absorbed in the semiconductor panel is scanned with the light beam, each time the light spot strikes a portion of the millimeter wave image, the energy reflected from the panel will be increased. By means of a beam splitter 55A, a portion of this reflected energy can be directed toward a millimeter wave detector. The beam splitter may include a partially transmitting layer oriented at degrees to the path of the incoming millimeter wave energy and so constructed to permit a portion of incident millimeter wave energy to pass through to irradiate the semiconductor, but also to allow a portion of the millimeter wave energy reflected from the semiconductor panel to be directed off to the side, as shown in FIG. 13. This portion of the reflected energy from the semiconductor can be detected by means of a millimeter wave detector 35B connected, for example, by way of a waveguide 49A to a horn 48A positioned at the focal point of a parabolic reflector 60. The detector output is amplified by amplifier 46B and applied to the Z axis of cathode ray tube 40A.
It is to be understood that the millimeter wave energy reflected from the semiconductor panel assembly of FIG. 13 can be fed to a horn positioned between the semiconductor 50A and the lens 18B, and the detector coupled to the horn by waveguide, as indicated in FIG. 3. The advantage of the beam splitting arrangement is that an increased angle of view can be obtained, compared Iwith that of the collector horn positioned between the semiconductor panel and the collecting lens. The area of the horn is relatively small compared to the aperture of the lens, however, so that the interposed horn does not present serious problems of interference with the incoming millimeter wave energy. A disadvantage of the beam splitting method, however, is that a certain portion of the energy reflected from the panel is lost in transmission through the mirror A.
As in the case of the systems previously described, the scanning of the light beam across the semiconductor panel 50A is synchronized with the electron beam raster at the cathode ray tube 40A. The horizontal and vertical sweep circuits 41A and 42A, respectively, are connected to the X and Y terminals of the cathode ray tube 40A. These sweep circuits 41A and 42A, although shown in FIG. 13 as external to cathode ray tube 40A, may be located physically within the cathode ray tube itself.
At this point, a summary of the position of the light scanning means will be mentioned. In the reflection type system using a fixed solid back reflector, as shown in FIG. 6, obviously it would be necessary to illuminate the front of the semiconductor panel. lf, however, the back reflector is perforate rather than solid, the light scanner could be positioned to illuminate either surface. This is true also of the reflection system using the movable reflector. As in the case of the system shown in FIG. 6, the reflector l of FIG. 13 could be of solid construction rather than being of mesh. However, this decreases the flexibility of the system, since the scanning light beam would have to be directed onto the front surface of the semiconductor panel.
What is claimed is:
1. A millimeter wave imaging system comprising a layer of semiconductor material the conductivity of which can be changed in response to energy from a scanning means, means for irradiating said layer with millimeter wave energy to form a millimeter wave image on said layer, means for sequentially sampling discrete portions of said layer to affect the amount of millimeter wave energy reected from said discrete portions of said layer, and means controlled in response to Said sampling for providing a visual indication of said millimeter wave image.
2. A millimeter wave imaging system in accordance with claim 1 wherein said system includes a lixed reector of millimeter Wave energy integral with said layer.
3. A millimeter wave imaging system in accordance with claim 2 wherein said reflector is transparent to energy from said scanning means.
4. A millimeter wave imaging system in accordance with claim 1 wherein said system includes a member reiiective of millimeter wave energy, the spacing between said member and said layer being adjustable.
5. A millimeter wave imaging system comprising a layer of semiconductor material having a thickness equal to integral portions of a wavelength in the semiconductor material at the operating frequency of said system, means irradiating said layer with millimeter wave energy to form a millimeter wave image on said layer, scanning means for illuminating sequentially discrete regions of said layer to produce momentary changes in conductivity of said discrete regions, said conductivity changes affecting the amount of millimeter wave energy emanating from a surface of said layer, means for detecting the emanating millimeter wave energy, and visual indicating means supplied with said detected energy and synchronized with said scanning means.
6. A millimeter wave imaging system according to claim 5 wherein said portion are halves.
7. A millimeter wave imaging system according to claim 5 wherein said portion are odd quarters.
8. A millimeter wave imaging system according to claim 5 wherein said wave energy is reflected from said layer.
9. A millimeter wave imaging system according to claim 6 wherein said wave energy is reliected from said layer.
10. A millimeter wave imaging system according to claim 7 wherein the number of odd quarter wavelengths is selected for maximum change in reection of millimeter wave energy for a given value of conductivity.
11. A millimeter wave imaging system according to claim 7 wherein said layer includes a reflector of millimeter wave energy integral therewith.
12. A millimeter wave imaging system according to claim 11 wherein said reflector is transparent to energy rom said scanning means.
13. A millimeter rwave imaging system comprising a panel assembly including a layer of semiconductor material having a thickness L and a movable reilector of millimeter wave energy spaced from said layer by an adjustable distance M, means for irradiating said layer with millimeter wave energy to form a millimeter wave image on said layer, scanning means for illuminating sequentially discrete regions of said layer to produce momentary changes in conductivity a of said discrete regions, said conductivity changes affecting the amount of millimeter Wave energy reflected from said panel assembly, means for detecting the reflected millimeter Wave energy, and visual indicating means supplied with said detected energy and synchronized with said scanning means, the product of the thickness L and the conductivity a of said laye-r being given by the relation aL=l tanh-1 L ZS ya.
where Zs is the wave impedance of said layer and @R is the dielectric constant of said layer, and the spacing M is adjusted to satisfy the relation References Cited UNITED STATES PATENTS 3,050,725 8/1962 Kueckew 343-17 3,243,784 3/1966 Anderson et al 343-17 X 3,305,863 2/1967 Jacobs 343-18 RICHARD A. FARLEY, Primary Examiner.
J. P. MORRIS, Assistant Examiner.
Patent Citations
Referenced by
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- Memo Pad with Marcel Duchamp 1913 Bicycle Wheel
Memo Pad with Marcel Duchamp 1913 Bicycle Wheel
This memo pad is adorned on the cover with a photo of a Marcel Duchamp work consisting of a front bicycle wheel attached to its fork atop a white kitchen stool. Read more
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This memo pad has a hard cover and features an image of a Marcel Duchamp work created in 1913. The work features a white kitchen stool that has a black bicycle wheel inside the front fork set atop it. The artist, Marcel Duchamp, was considered to be an important figure in the Dadaist and Surrealist painting movements in France and the US. The image on this notepad comes from the "Readymades" series. This item is a great gift for an artist!
This memo pad comes with a certificate from the Israel Museum as well as a small pamphlet with background information in Hebrew and English.
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David Jerome Graham
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Rheem reviews ??
We live in the desert where it gets 110+ daily for four months out of the year. Found out our ductwork was inadequate after moving in a year ago, so now looking to replace ductwork and ac system which is 24 years old and uses SO MUCH ELECTRICITY that I dread opening the bill each month.
We are looking at Rheem 5 ton 14 SEER condenser #14AJM60A01 and 80% furnace #RGPS10NBRJR. The furnace is only a single speed and I'm not sure if upgrading to a variable speed is worth any electricity cost savings. We may only be in the house 5 years and just getting new units and ductwork should really help electricity wise. Any opinions on these units?
I like Rheem. It is a mid line HVAC manufacturer with quality and dependability but really not cutting edge top of line equipment.
However I don't care for the models quoted because they are low end builder grade HVAC. The condenser is made South of the Border. Wouldn't have it. I can make some upgraded suggestions if interested.
Since humidity is not an issue, it is not necessary for you to have a var speed furnace. A good single stage with a high eff blower motor should be just fine.
You want an AC condenser that has a minimum 15 SEER rating with full cooling BTUs for rated size.
I prefer Trane/AmStd or Carrier/Bryant. Of course with best matching evap coil. Filter media cabinet as well. Make certain new ductwork has adequate returns strategically located for superior airflow and improved comfort. Of course super excellent insulation properties.
If your existing system is 24 years old, then it was probably around 8 SEER. With inadequate ductwork (undersized and/or leaking) it would have even less delivered efficiency. Going to 15-16 SEER should cut your bills substantially, especially with sealed, insulated ductwork and attention to insulation (particularly in the attic).


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Season 6
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1. Loser Like Me
2. Homecoming
3. Jagged Little Tapestry
4. The Hurt Locker
5. The Hurt Locker, Part 2
6. What the World Needs Now
7. Transitioning
8. A Wedding
9. Child Star
10. The Rise and Fall of Sue Sylvester
11. We Built This Glee Club
12. 2009
13. Dreams Come True
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102. GLEE Season 6 Sneak Peek
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Celebrating its landmark 850th episode this season, COPS remains one of the longest-running primetime series currently airing on broadcast television.
COPS has profiled law enforcement agencies in over 140 U.S. cities and has filmed in Europe, Asia and Central and South America. It was the first American television program to follow police in the former Soviet Union. In the upcoming season, COPS will cover the U.S. from coast to coast, filming with police and sheriff's departments in California, Florida, New Jersey, Ohio and Virginia. After a long absence, the show will revisit Broward County, FL, Kansas City, MO, and Sacramento, CA, and for the first time in the series' history, COPS will visit Newport News, VA, and Toledo, OH. Additionally, the 25th season of COPS will feature another unforgettable edition of the holiday special, "Ho! Ho! Ho!"
Created by John Langley, COPS is produced by Langley Productions, Inc. and Fox Television Studios. John Langley and Morgan Langley are executive producers. Doug Waterman serves as supervising producer and Zach Ragsdale as producer. "Like" COPS on Facebook at www.facebook.com/Copstv. Follow the series on Twitter @COPStv and join the discussion at #cops.


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How Do You Whiten Your CP Soaps?
hello all!
first off, I'm assuming that "CP soaps" means cold process soaps? If not, then I meant cold process =)
I have made several batchs of CP soaps so far, and although in some applications I like the natural yellowish-brown of the soap crystals that form, but when it comes to coloring the soap (say a light pink) it is impossible to overcome that yellow-brown color! Upon doing some research I found that titanium dioxide is a common and very inert ingredient used to "absorb" color. The only problem I'm running into is, it greatly reduces the moisturizing effects of the ingredients of the soap and tends to dry out my hands in the finished product.
Can anyone help me track down some different ingredients/techniques for how to either remove the natural yellow color, or reduce it substancially without the use of titanium dioxide?
Thansk much!
To my knowledge, which I will admit is limited when it comes to CP soap as I do rebatching and melt and pour, other than the titanium dioxide, there really isn't anything to whiten soap. Most discoloring is from the ingredients, and especially the fragrance oils. Fragrance oils that contain vanilla are notorious for this. There is an additive you can buy that prevents the natural browning effect of fragrance oils that have vanilla in them. I have never used it, as I prefer my soap to have as few additives as possible. This vanilla stabilizer (as it is called) smells bad. (I have smelled it- that was enough to make me decide not to use it.) People have assured me that the odor dissipates in the soap. I do know that the product works because everyone says it does. I just prefer the natural coloring.
What oils/fats you use certainly have an effect on the final colour of the soap. Titainium dioxide is the only ingredient that comes to mind to whiten.
A large proportioned lard or tallow based soap may give you the whitest results.
I believe that there is a non-discolouring vanilla but I forget who carries it.
Yes, CP is cold process, the acronyms will drive you mad; they're almost as bad as a government agency.
I have noted that when I make soap with coconut oil from Wal Mart (LOU ANA) which is white and organic vegetable spread from the health food store (made with all palm oil) and add my olive oil to that my soap was white/white instead of the creamy color I got when I used coconut and palm oils from a couple of the soap material suppliers. Those oils came to me a creamy color, and that's what I got for a finished product. From now on I will try to stick with the Lou Ana if I can and see what happens next.
Happy Soaping!!!


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Choosing the right tripod or monopod head is just as important as choosing the right tripod or monopod. We have a wide selection of heads for any shooting situation. Whether your passion is video or photo, the right head is here for you. If you just can't decide the best option for your needs, give us a call and we will help you make the right decision.
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Communism Publications
33. Romania's Unfinished RevolutionJul 07, 2011
From the moment the megalomaniac "Great Leader" Nicolae Ceausescu, who turned his onetime maverick country into the new basket case of Europe, was overthrown, Romania became a special case again. It has opted for neither the gradual transformation chosen by Poland and Hungary nor the "velvet" revolutions of Czechoslovakia and the now defunct German Democratic Republic; even in Bulgaria, the coup that toppled Todor Zhivkov was not violent. But in Romania, the popular uprising that led to Ceausescu's overthrow on 22 December 1989 cost 1,033 lives, inflicted heavy suffering to a further 2,198 people, and damaged buildings, some of them historically significant. This paper analyzes the role disillusionment, credibility, revisionist history, and legitimacy play in the unstable result of an unfinished revolution. more
199. The Road to Bosnia and Kosovo: The Role of the Great Powers in the BalkansJul 07, 2011
April 2000 - As a young boy, I was unusually aware of Russia as our home in Kensington creaked under the weight of many tomes written in Cyrillic while prints of Tsarist and Bolshevik Russia stared at us from walls with their unmistakable 'dare to survive the cauldron of history' quality. more
262. Gendered Entanglements in the Time of Marxism: The Friendship of Wanda Wasilewska and Janina Broniewska in a Man's RevolutionJul 07, 2011
March 2002- During the bleak Polish winter of 1922, the young poet Wladyslaw Broniewski was dreaming of a fantastical romance with a demonic woman; instead he fell in love with a pretty girl named Janina Kunig. Broniewski lived in the elegant prewar city of Warsaw, where he would spend his evenings with a small group of young writers – including Aleksander Wat – who gathered on the upper floor of Cafe Ziemianska. The young poets were, for the most part, Poles and cosmopolitans – "non-Jewish Jews." Broniewski, in this respect, was an exception, an ethnic Pole, of all of them the most tied to the Polish romantic tradition. It was Broniewski who came out of Marshal Jozef Pilsudski's military Legions, who fought against the Soviets in his youth and later became a proletarian poet. He wrote Janina love letters in a language reminiscent of the knights and castles of premodern chivalry. Janina loved him as well, with an affection and concern that would last her entire life. Her greatest, most undying love, though, was for Wanda Wasilewska, who in the 1920s was a promising young leader of the Polish Socialist Party to which her father had devoted his life. She lived in Cracow, where she drank endless cups of black coffee and chain-smoked and wrote poems for a newspaper called Robotnik (The Worker). She was a very tall woman with a large voice in a man's world, and she and Janina would come to mean more to each other than any of the six husbands they had between them. more
18. In Search of the Drama of History or A Second Look at Communism and NationalismJul 07, 2011
The series of articles that follows confront a fundamental question of socio-political development, the nature of social allegiances and the two main systems of classification that have been proposed to explain them: class and nation. All of the articles revolve around issues raised by Roman Szporluk in his book "Communism and Nationalism: Marx vs. List," published by the Oxford University Press in the spring of 1988. more
Political Transition in Hungary, 1989-1990Jul 07, 2011
A CWIHP Document Reader compiled for the international conference "Political Transition in Hungary, 1989-1990," Budapest, Hungary, 12 June 1999 more
The Oil Prince's Legacy: Rockefeller Philanthropy in ChinaMay 01, 2011
The Oil Prince's Legacy traces Rockefeller philanthropy in China from the nineteenth century to today. Family diaries, letters, interviews in China, and institutional archival records are used to tell a compelling story about successive Rockefeller generations and U.S.–China cultural relations. more
Stalin and Togliatti: Italy and the Origins of the Cold WarOct 01, 2010
Stalin and Togliatti reveals the dependence of the Italian Communist Party on Soviet decisionmaking in the early Cold War and the willingness of Stalin to sacrifice the interests of the Italian Communist Party to Soviet foreign interests. It explores the connection between the domestic Italian politics and the international affairs during the final phases of the Second World War and in the first years of the Cold War. more
A Distant Front in the Cold War: The USSR in West Africa and the Congo, 1956–1964Oct 01, 2010
A Distant Front in the Cold War reveals West Africa as a significant site of Cold War conflict in the late 1950s and early 1960s. Although the region avoided the extreme tensions of the standoff in Eastern Europe or in the Cuban missile crisis, it nevertheless offers a vivid example of political, economic, and propagandistic rivalry between the US and the USSR. more
Rock and Roll in the Rocket City: The West, Identity, and Ideology in Soviet Dniepropetrovsk, 1960–1985May 01, 2010
In Rock and Roll in the Rocket City, Sergei I. Zhuk assesses the impact of Westernization on the city's youth, examining the degree to which the consumption of Western music, movies, and literature ultimately challenged the ideological control maintained by state officials. more
Contemporary Women's Movements in Hungary: Globalization, Democracy, and Gender EqualityOct 01, 2009
This groundbreaking study focuses on the role of women's activism in a society where women are not yet adequately represented by established parties and political institutions. Katalin Fábián examines the interactions between women's groups in Hungary and studies the unique brand of democracy they have forged in postcommunist Eastern Europe. more


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Tags: parenting
MOM Magazine: MOM Magazine, 2013 Holiday Issue in the Mid-Valley
Real. Local. Moms.Standard / 8.25" x 10.75"Print + Digital: $6.40 Digital: Free!
Deeply Rooted Magazine - SAMPLE ISSUE ZERO
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TWINS Magazine: TWINS Sept-Oct 2013
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Our July/August issue is here and includes articles about going back to school, breastfeeding multiples, taking twins from crib to bed and more!Standard / 8.25" x 10.75"Print: $14.00 Digital: $6.00


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YME to hold public meeting on $14M project
GRANITE FALLS -- Elmo Volstad will continue as chair and Grant Velde will serve as vice chair of the Yellow Medicine East School Board, board members decided at their meeting on Monday.
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Book your room at Hotel Karraz
Please enter your travel dates.
Aparthotel in Paris (Louvre - Place Vendome) near Louvre Museum
Collect 200 points
Simply enter your Nectar card number when prompted. Your points will be credited 30 days after you return from your trip.*Offers may apply
Located in the heart of Paris, this aparthotel is within walking distance of Forum des Halles and Museum Georges Pompidou. Also nearby are Louvre Museum and Pont Neuf.
Property Features
Amenities at Hotel Karraz include complimentary wireless Internet access and a snack bar/deli.
Room Amenities
All guestrooms feature beds with Select Comfort mattresses, kitchens, and kitchenettes. Other amenities include complimentary wireless Internet access and refrigerators.Information missing or incorrect? Tell us!
Hotel Amenities
Hotel Amenities
The aparthotel offers a snack bar/deli. High-speed wireless Internet access is complimentary.
- Free WiFi
- Number of floors - 5
- Number of buildings/towers - 1
- Snack bar/deli
- Airport transportation - drop-off (surcharge)
- Total number of rooms - 5
- Airport transportation
Available in all rooms: Free WiFi
Available in some public areas: Free WiFi
Room Amenities
- Coffee/tea maker
- Private bathroom
- Hair dryer
- Kitchenette
- Microwave
- Cookware, dishware, and utensils
- Rollaway/extra beds available
- Free WiFi
- Shower only
- Stovetop
- Kitchen
- Refrigerator
- Minibar
- Television
- Iron/ironing board (on request)
- Separate dining area
- Egyptian-cotton sheets
- Pillowtop mattress
- Sleep Number by Select Comfort mattress
Nearby Things to Do
The recreational activities listed below are available either on site or nearby; fees may apply.
- Bicycle rentals nearby
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Check-in time starts at 1:30 PM
Check-in time ends at 11 PM
Check-out time is noon
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Extra-person charges may apply and vary depending on hotel policy.
Government-issued photo identification and a credit card or cash deposit are required at check-in for incidental charges.
Special requests are subject to availability upon check-in and may incur additional charges. Special requests cannot be guaranteed.
- No onsite parking is available.
No elevators
No pets or service animals allowed
- A tax is imposed by the city: EUR 0.82 per person, per night
We should mention
No pets and no service animals are allowed at this property.


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Dr. Raja Chadalavada, MD
- 10600 Montgomery Rd Ste 200
Cincinnati, OH 45242
- 3 Locations
- (513) 794-5600
Dr. Raja Chadalavada graduated from the Kasturba Med Coll Manipal, Manipal Acad Higher Ed, Manipal, Karnataka in 1993. He works in Cincinnati, OH and 2 other locations and specializes in Gastroenterology and Hepatology. Dr. Chadalavada is affiliated with Bethesda North Hospital, Dearborn County Hospital, Fort Hamilton Hospital and Good Samaritan Hospital. He speaks Chinese, English, French and Spanish.View More
Gender: Male
Languages Spoken: Chinese, English, French, Spanish
Gastroenterology, Hepatology
Medical School: Kasturba Med Coll Manipal, Manipal Acad Higher Ed, Manipal, Karnataka; Graduated 1993
*This physician has multiple office locations. See Office Information for details.


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A new-to-me basement is like 62-64 degrees, with maybe a slightly cooler area.
Last week was my first fermentation run, with Nottingham yeast and it's doing great (Apfelwien, actually).
Will conditioning within this temperature range, below the magic 70 deg. level just take more time?
You are looking at the hole in the doughnut and not the doughnut itself.
You primates are so predictable.
My basement is the exact same temp. I bottle condition for minimum three weeks down there and a few days in the fridge. Best is four weeks in the basement, one in the fridge.


text: Kenneth Bernard Proctor, 46, of Waldorf His neighbor and former classmate from La Plata High School, Dale Minson, said Kenneth Proctor once worked the night shift, but switched to days a year or two ago. He was happy about the change, she said. "We just talked as old friends," she said. He was... Family photo


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UnderGround Forums >> Who would be in a TUF Comeback season #2? Part 2
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Underground Blog
Member Since: 12/3/08
Posts: 9419
Underground Blog Guest Blogger (UBGB) Jack Brown is "The Part-Time Martial Artist," offering a full-time fan's perspective on UFC and major MMA news, developments, or hypotheticals. He earned a black belt in Tae Kwon Do a decade ago from Joe Rogan's teenage alma mater Jae H. Kim in Boston, and currently trains at Lauzon MMA.
In his second blog, he offers choices for a hypothetical repeat of the TUF Comback Season, which uniquely was composed of fighters that had fought in the UFC, but had yet to win a UFC title, rather than the usual cast of UFC hopefuls.
TUF 4 fighters included Travis Lutter, Charles McCarthy, Jorge Rivera, Mikey Burnett, Pete Spratt, Patrick Côté, Shonie Carter, Chris Lytle, Matt Serra, and Din Thomas.
Who should be in if they bring back the concept?
TUF Comeback Season 2 continued – The Welterweights and the Middleweights
Judging from your responses to my last blog about the lightweights, we are all on the same page about one thing. We want another TUF comeback season!
Some of you questioned why I'd want to use current UFC fighters, rather than those who had been cut. The UFC is in a much different position now compared to the TUF 4 era. Back then, their roster was nowhere near as deep as it is now. For the most part, if you're three fights away from headlining a PPV and getting a title shot, you're already in the UFC or contracted to Bellator or Strikeforce. Also, this is a TV show, potentially on FX, and the UFC is not likely to spend their time and money promoting fighters they already thought should be cut. So stop complaining and think about how unbelievable it would be to watch some of these fights, and the behind the scenes drama, for free.
On the original comeback season, TUF 4, there were two weight classes. So while the lightweights are a possibility, we can't forget about how deep the UFC's welterweight and middleweight divisions are (Sorry, the two heaviest and three lightest weight classes don't have the depth for this show right now). So once again, using some of the original comeback season's blueprints, plus a few ground rules, here are the candidates for the eight man casts of welterweights and middleweights (Sorry, Anthony Johnson – Still no chance at these cuts either. We'll enjoy watching you tearing it up at 205 someday).
Ground rules: Fighters should all be part of the UFC's current roster, should not have fought for or had the title before (Ouch! No Fitch, Koscheck, Alves, Hughes, Serra, Penn, Hardy, or Diaz at welterweight and no Belfort, Franklin, Okami, Cote, or Sonnen at middleweight. But some of these guys could definitely rotate in for some coaching and training on the show), and should plausibly be three wins away from the title fight that winning the show would get them. We'll also leave out the current champs (GSP/Condit and Anderson Silva) and the top contenders (Hendricks, Kampmann, Ellenberger, and MacDonald at welterweight and Lombard, Munoz, Stann, Belcher, and Weidman at middleweight) to keep the welterweight and middleweight divisions active while the show plays out.
Must Have: These two guys are TUF favorites and fan favorites as well. Both fought on TUF 1, but neither fought at welterweight back then. They've both struggled to find the right weight class, but they come from top camps and have had some great fights in the UFC.
Must Watch: These two fighters are both outside the typical mold of a UFC welterweight, but you won't see any ratings dips on the weeks that they fight on the show.
Made for Reality TV: These two fighters allegedly hate each other. That's good enough for me.
The Underdog:
The Real Comeback:
For Further Consideration: I'll go with Paulo Thiago (Must have a Brazilain), John Hathaway (UK market, please) Mike Pyle (Mullets are fun), Josh Neer (A dentist and a good way to get buddy Nick Diaz to swing by), TJ Waldburger, Dong Hyun Kim, and anyone else that you're going to get on me for not including.
Must Have: These three guys are superstars, have all fought each other, and are very accustomed to getting paid a lot and fighting at the top of the card. They have also had some key losses that are making it increasingly unlikely that they will ever get a title shot at middleweight in the UFC.
Must Watch: These two fighters have exciting styles that opponents normally have to spend a while training for. Perhaps that will give them both an advantage given the TUF format.
The Underdog:
The Real Comeback:
For Further Consideration: I'll go with Alessio Sakara (Italian, like from Italy), Jason MacDonald (Canadian), CB Dolloway (Canine), Ed Herman (redhead), and anyone else that you're going to get on me for not including.
Get at me with your comments and complaints on Twitter – @jackjohnbrown
In the next blog, an MMA guide to the Joe Rogan Experience podcast…
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No sense in using guys that are already on the roster.....TUF is for roster building. Keep the titles out of the TUF picture, divisions are far too stacked for that these days. That said; Bring back The Barn Cat!!!
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One of the worst written articles I've ever read on here. Almost all of the names on your list make no sense at all.
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Wells Fargo senior economist Mark Vitner told more than 100 people at Winthrop University Wednesday that there's only a one-in-three chance the nation will fall into another recession.
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I just learned that the top lead software engineers at Google make between $220k and $240k per year. Oh snap. That is about $100k more than what I consider the going rate for lead software engineers is. I wonder if these engineers are also getting stock options that could be worth more.
Maybe a bit of the high wages is the location. I figure it is probably expensive to own a house out by Google headquarters. And we all know that Google is very selective in its hiring. They hire superstars. You know. The get guys like James Gosling, who invented the Java programming language.
If you can't beat them, join them. It might be time to get a top job at Google. The only problem is that I can't see myself moving out there, even if the rewards are outstanding. Heck. I bet these lead software engineers get to spend the 20% of their time on special projects. What a life.
The Reach of Marketing - I love a good original chicken sandwich at Burger King. That's why I head there when I get a coupon from them that sweetens the deal. I might get a free f...


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Pablo Mexican Restaurants
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1. Fiesta En Jalisco
49440 US Highway 93Polson, MT 59860
(406) 883-5854
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2. Mexpress
63951 US Highway 93Ronan, MT 59864
(406) 676-9000
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text: I stayed at this place for my Brothers wedding. We had a garden room which to be fair was a very nice clean room. The price of the room included what was described as a country style breakfast, which we were told was between 9 - 10am. When we went for our breakfast at 8:50 we were rudely told that... More


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PC Game News
PC Game News"
Way of the Samurai 4 delayed again to Q2 2015
Ghostlight's upcoming PC port of Way of the Samurai 4 has been pushed to "Q2 2015″ according to changes made on the game's Steam store page.
Cities: Skylines reverts to 1.0.6b after save issues with patch 1.0.7b
Cities: Skylines should have rolled back to version 1.0.6b on Steam today, after it was found that the 1.0.7b update caused chaos with the saved game system.
Elite: Dangerous launches new contest with Nvidia Titan prizes
The 'Race to Elite' competition wrapped up a little while ago, so Elite: Dangerous are putting on a new contest with the enticing prize of five Nvidia GTX Titan Black cards.
New GTA 5 PC 4K screens are rather nice
GTA 5 in all its 4K glory is shown off in batch of new shots.
Hearthstone's Blackrock Mountain opens on 2 April
Dedicated Hearthstone players will be able to delve into the Blackrock Mountain expansion on 2 April.
Mortal Kombat X trailer focuses on the Shaolin
The latest Mortal Kombat X trailer shows off Liu Kang, Kung Lao, and series newcomer Kung Jin.
Lords of the Fallen dev Deck 13 offers Hideo Kojima a job
Will he? Won't he? We'll have to see if he takes them up on this offer.
MotoGP 15 announced, coming this spring
MotoGP 15 has been announced, and is racing along to a spring release.
The Sims 4 adds basements for all your shameful secrets
If you don't fancy putting shameful secrets in the new Sims 4 basements, your alternative is to turn your lower levels into swimming areas.
Pillars of Eternity journal sound bug fix
Yes, it's pretty much Pillars of Eternity day here on IncGamers – so here's how to get rid of the repeating journal page sound, if you've run into that particular bug.
Dirty Bomb closed beta back online – Lots of updates
After a few weeks rest, the Dirty Bomb servers are now live for key holders.
Pillars of Eternity out now
Obsidian and Paradox have announced that Pillars of Eternity, their giant old-school CRPG, is now out.
F1 2015 hitting the starting line in June
Codemasters have announced that F1 2015 will be revving its engines in June, courtesy of Bandai Namco Games.
Legend of Dungeon expands for free with Legend Heroes
Legend of Dungeon will update today, for free, with Legend Heroes – a sizeable expansion that adds rather a lot of new stuff.
Square Enix offering an Easter bundle surprise
If you're in a PAL region and fancy treating yourself to a bundle of mystery Square Enix games, this Easter celebration has you covered.
Cities: Skylines mods now include flight sim, tsunami maker and more
The game has been out for two weeks and the community are very creative.
Diablo 3 Season 3 Legendaries revealed
With Diablo 3 Season 2 set to end on 5 April, Blizzard reveal all the goodies for Season 3.
FIFA Ultimate Team changes explained by EA
EA want to clear the air to explain their decisions on price ranges and more.


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Is it easier to ask us?
Yes. If you're sure you don't want to sell, let your Realtor know your situation has changed. Your Realtor can let the buyer's agent know their offer is not accepted. Your Realtor can cancel the listing - you just need to sign paperwork. (They can't force you to sell your house - especially if you haven't signed a purchase contract).
Shanna Rogers
SR Realty
Tracy Hoyt
Prudential Tropical Realty