text:
SEFFNER, Fla. (AP) — Authorities hope to get a better look at a sinkhole that swallowed a man in his Florida home once demolition crews knock down the remaining walls of the house Monday and begin clearing away the debris.
Crews on Sunday razed more than half the home, managing to salvage some keepsakes for family members who lived there.
The opening of the sinkhole has been covered by the home, but once emergency officials and engineers can see inside it more clearly, they could begin planning how to deal with it. They also need to decide what will happen to the two homes on either side of the now-demolished house. Experts say the sinkhole has "compromised" those homes, but it's unclear whether steps can be taken to save them.
Jeremy Bush, 35, tried to save his brother, Jeff, when the earth opened up and swallowed him Thursday night.
On Sunday morning, Bush and relatives prayed with a pastor as the home — where he lived with his girlfriend, Rachel Wicker; their daughter, Hannah, 2; and others — was demolished and waited for firefighters to salvage anything possible from inside. The home was owned by Leland Wicker, Rachel's grandfather, since the 1970s.
The operator of the heavy equipment worked gingerly, first taking off a front wall. Family belongings were scooped onto the lawn gently in hopes of salvaging parts of the family's 40-year history in the home.
As of Sunday afternoon — when demolition had stopped for the day and only a few walls remained — a Bible, family photos, a jewelry box and a pink teddy bear for Hannah were among the items saved. Firefighters also were able to pick out the purse of one of the women in the home.
Cheers went up from family, friends and neighbors each time something valuable was salvaged.
Wanda Carter, the daughter of Leland Wicker, cradled the large family Bible in her arms. She said her mother and father had stored baptism certificates, cards and photos between the pages of that Bible over the years.
"It means that God is still in control, and He knew we needed this for closure," she said, crying.
Carter said she spent from age 11 to 20 in the home, and she had to close her eyes as the home was knocked down.
"Thank you for all of the memories and life it gave us," she said.
The Rev. John Martin Bell of Shoals Baptist Church said he had been with the family all morning. "We just prayed with them," he said. He added that all five who lived in the house — Bush, Wicker, Hannah and two others ages 50 and 45 — were in need of support and prayers from the community.
Several generations of family members lived in the home at the time of the ground collapse, including Jeff Bush, the man now presumed dead.
Jeremy Bush tried to save his brother by jumping into the sinking dirt hole. He had to be pulled out of the still-shifting hole by a Hillsborough County Sheriff's deputy, who was visibly shaken when talking about the incident more than a day later.
"I've never seen anything move so fast and do so much destruction," Deputy Douglas Duvall said.
The search for Jeff Bush, 37, was called off Saturday. He was in his bedroom Thursday night in Seffner — a suburb of 8,000 people 15 miles east of downtown Tampa — when the ground opened and took him and everything else in his room. Five others in the house at the time escape unharmed as the earth crumbled.
The Hillsborough County Sheriff's Office is conducting the investigation. Detective Larry McKinnon said the sheriff's office and the county medical examiner cannot declare Bush dead if his body is still missing. Under Florida law, Bush's family must petition a court to declare him deceased.
"Based on the circumstances, he's presumed dead; however the official death certificate can only be issued by a judge and the family has to petition the court," McKinnon said.
The area around Seffner is known for sinkholes due to the geography of the terrain, but they are rarely deadly. No one — from longtime public safety officials to geologists — could remember an incident where a person was sucked into the earth without warning.
Follow Tamara Lush on Twitter at http://twitter.com/tamaralush .
Copyright 2013 The Associated Press.
Officials Begin Demolition of Florida Sinkhole Home
Sinkhole swallowed man inside home on Thursday night
SEFFNER, Fla. (AP) — Authorities hope to get a better look at a sinkhole that swallowed a man in his Florida home once demolition crews knock down the remaining walls of the house Monday and begin clearing away the debris.
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You can now invite anyone to meet at your favorite Starbucks.
Limited-time feature
60 year old man | Moreno Valley, CA, USA | Seeking women 45-50 within 50 miles
well here I am ... I am funny positive little older but full of life, anyone intrested in taking a chance with me for a new life and adven..
I am not looking not for the perfect woman only some one who can be my best friend, some one who cares about me and what i have to offer my heart !!!!! most of all trust, respect, and be open minded do not be afraid of what life throws at you....
Camping , Coffee and conversation , Cooking , Dining out , Gardening/Landscaping , Movies/Videos , Music and concerts , Exploring new areas , Performing arts , Playing cards , Playing sports , Shopping/Antiques , Travel/Sightseeing , Volunteering , Watching sports , Wine tasting
Bowling, Golf, Running, Soccer, Tennis / Racquet sports, Walking / Hiking
I exercise 1-2 times per week.
I have Dogs
Middle of the Road
my local place is the Green onion in M. V. my favorite and great experinace was Alaska, and Machi pichu Peru.
I enjoy playing golf on weekends, walking, playing soccer, I love to go to the beach, the mountains, go to the movies,and love to work on my yard.
Z{{Cta}} {{#if HasMoreInfo}} ?{{CtaSecondary}} {{/if}}
|What he is looking for
|5'9" (175cms)
|5'0" (152cms) to 5'8" (172cms)
|Body type:
|About average
|Slender, About average, Curvy, Athletic and toned, A few extra pounds
|Blue, Brown, Green, Hazel
|Salt and pepper
|Auburn / Red, Black, Light brown, Dark brown, Blonde
|No Way
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|Latino / Hispanic
|Latino / Hispanic, Middle Eastern, Native American, Pacific Islander, White / Caucasian
|Christian / Other
|Christian / Catholic
|English, Spanish
|Associates degree
|Some college, Associates degree

subset: commoncrawl


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When One Department Just Isn't Enough: Digital Communications as an Interdisciplinary Major
To help students prepare for careers in a world that increasingly demands facility in multiple fields, the College has developed nine majors and one minor that cross traditional departmental boundaries. These interdisciplinary majors, in areas ranging from actuarial science to music recording technology and digital communications to mathematical sciences, are among the College's fastest growing.
The broad focus of the
digital communications major
is to teach students to create visionary media solutions for business and communications clients, including designing and developing web pages, coordinating multimedia advertising campaigns, creating coherent product brand identities, and planning and executing marketing plans. Students can choose to concentrate in one of four areas within the major: design, business, communications, or computer science.
Dr. Jeff Ritchie, chair and associate professor of digital communications, acknowledges that designing the curriculum for an interdisciplinary major can be a challenge. "It runs the risk of being scattered," he warned. "But these wildly disparate fields, if you look at them together, reveal remarkably interesting ideas, and that's one of the real advantages I see in this curriculum. We want to create accomplished interdisciplinary thinkers who can see how these fields work together."
Ritchie explained that the department built its curriculum around three ideas that run through all aspects of digital communications: innovation, problem-solving, and human-centered design. "For us, it's a methodology of creating teams that find out what real people want and how real people interact with systems; then attempting to design products and systems that meet those needs and interactions.
"Ultimately, the interdisciplinary nature of the digital communications field itself drives the curriculum," Ritchie said. "If you were to set about creating an advertising campaign, you would have to understand the business elements, be able to write clear copy, create convincing videos, and use technology to program a website that would support competent and enabling interactions," he noted. "The intersection of disciplines is where you find creativity."
Ritchie sees the plan working. "It seems that the industry really values this interdisciplinary approach," he said. "Our students have been remarkably successful at securing jobs pretty quickly in our field."
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A New OpenCL Back-End For LLVM Is Published
Published on 07 March 2012 07:55 AM EST
Written by
Michael Larabel
4 Comments
the open-source AMD Radeon support for OpenCL
finally taking shape, there's more good open-source OpenCL news: a newly open-sourced LLVM OpenCL back-end.
Back in August I wrote about
an OpenCL, GLSL back-end for LLVM that may soon open up
. The work was the result of a German student writing the LLVM OpenCL back-end as part of his university thesis. OpenCL is generated from LLVM bit-code, similar to how
the Emscripten project
generating JavaScript from LLVM bit-code
. This work is what's finally being opened up.
announced to the LLVM developers
, Simon Moll, the student responsible for this work, has released his OpenCL back-end and control-flow restructuring framework. The restructuring framework re-does the instructions such that they can be expressed without goto statements and switch/loops, which is needed to emit source-code for strict control-flow structured languages like OpenCL and the GL Shading Language.
Simon's OpenCL LLVM back-end has been tested against both the recent AMD and NVIDIA drivers using the vendor demos/benchmarks, and it works with few caveats.
The OpenCL back-end has been updated so that it works against the current SVN development state of LLVM 3.0/3.1, but the GLSL back-end is currently living in the LLVM 2.9 days, but with word that it will be ported later to the latest LLVM interfaces.
The code for this interesting back-end has been published on
AMD has already commented on the work by this university student. In particular, Axtor (the restructuring framework) was compared to AMD's control-flow structizer in
the AMDIL LLVM back-end AMD open-sourced
a few months ago. AMD said it would be nice if the efforts could be merged, but the current licensing is incompatible. Simon Moll has already responded that he's looking at possibly putting out this code under a more permissive license.
Other related reading would be
An Initial Version Of LunarGLASS-LLVM For Mesa
AMD Makes Progress With LLVM For Gallium3D
4 Comments
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Michael Larabel is the principal author of Phoronix.com and founded the web-site in 2004 with a focus on enriching the Linux hardware experience and being the largest web-site devoted to Linux hardware reviews, particularly for products relevant to Linux gamers and enthusiasts but also commonly reviewing servers/workstations and embedded Linux devices. Michael has written more than 10,000 articles covering the state of Linux hardware support, Linux performance, graphics hardware drivers, and other topics. Michael is also the lead developer of the
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Antihemophilic FactorCellCeptCoagulation Factor VIIaCopegusMycophenolate MofetilPeg-IntronPegasysPeginterferon alfa-2aPeginterferon alfa-2bRebetolRecombinantRibavirinRocheSchering PloughSchering-PloughVirazole
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Just and Justifier
Dr. R.C. Sproul writes in his commentary on Romans: "In the drama of justification, God remains just. He does not set aside His justice; He does not waive his righteousness; he insists upon it… . If all he did was ...Read More
The Righteousness of God Manifested
Paul's "but now" of Romans 3:21 describes a momentous change in history. The people who lived before Christ lived in an era characterized by unrighteousness and wrath, dwelling under the condemnation of God's law. Now that Christ ...Read More
The Holiness of God
Dr. R.C. Sproul has often pointed out that the threefold repetition of "holy" in today's passage indicates the vital importance of God's holiness. The Lord clearly wants us to understand that He is holy, and we must ...Read More
Is God Unrighteous?
At the root of all sin is the arrogant attempt of creatures to judge their Creator, to believe that we know better than He does and to go our own way or to deny what He has said about Himself ...Read More
The Faithfulness of God
The notion that the Lord must judge sin in order to be faithful is developed in more detail at the end of Romans 3. Paul cites Psalm 51 in today's passage because in this prayer of confession, David points ...Read More
God's Impartiality
Only those who patiently do good in hope of immortality will enter into eternal life (Rom. 2:6–7). Yet no one even wants to do this apart from divine grace, as Paul explains in the next few chapters of ...Read More
Presuming upon God's Kindness
Martin Luther comments on today's passage that "so great is the blindness of the sinner that he abuses to his own harm the things that have been given to him for his own benefit." Though Paul has the Jews ...Read More
The Righteousness of God
Even many professing Christians believe that they become citizens of heaven because they have lived a "good life." The gospel tells us that no one but Christ has lived a life that is truly good. He alone deserves the kingdom ...Read More
God's Righteousness Revealed
The gift character of righteousness is underscored in Paul's statement that "the righteousness of God is revealed from faith for faith." Our position before the Lord is by faith alone from first to last, and nothing we do can ...Read More
The LORD Will Be King
John Calvin writes, "Nothing indeed can be more blessed than to live under the reign of God; and this highest happiness is ever promised to the faithful." Because human beings rebel against God, however, His reign is not always acknowledged ...Read More
The King Comes on a Donkey
Note again that God's covenant of salvation is unconditional in the sense that the Lord Himself guarantees that He will enact it—He will certainly save a people for Himself. That does not mean, however, that this covenant of ...Read More
God's Promise to Abraham
Obviously, God cannot cease being God. Thus, there is no chance that the Lord will fail to keep His promise to Abraham. As we look at history, we see that our Creator is keeping His pledge to the patriarch. Abraham ...Read More
God's Promise to Eve
When the Lord seems slow in acting, we find it extremely difficult not to think that He has somehow forgotten us. However, God is not bound by our timing, and He always answers us when the time is right, not ...Read More
The Handwriting on the Wall
In today's passage, we saw the great and mighty dependent on the very people they conquered for insight into the Lord's ways. God so often uses the meek, the powerless, and even the subjugated to show those who ...Read More
Salvation for God's Sake
Regeneration was not unknown to the saints of the old covenant. However, Scripture indicates that new covenant believers understand the Lord's work of regeneration far more clearly than those who lived before the coming of Christ. Ezekiel's teaching ...Read More


text:
Property to let in Newbury Avenue, York YO24 - 3 bedrooms
£750 pcm (£173 pw)
Tudor Road, Acomb, York YO24End terrace house to rent - 3 bedrooms
Churchills are delighted to offer for rent this excellent three bedroom home to the South West of York. The well presented living accommodation briefly comprises; entrance hall, 15' lounge, modern fitted kitchen, ground floor cloaks/WC, first floor ... More details
Note: Distances are straight line measurements
- York (1.4 miles)
- Poppleton (2.0 miles)
Marketed by Churchills Estate Agents, YO23. Call 01904 409912


text:
News & Announcements
Your ideas are invited in the University Innovation Council's campus-wide green campaign. All faculty and staff are encourage to submit their thoughts on how to improve sustainability efforts at UNCW at http://uncw.edu/innovate/.
Watson College of Education dean candidate meet-and-greets start next week. Four candidates for this position will be visiting the UNCW campus between March 23 and April 8. The interview dates and times for open forums...
In partnership with Port City Java, an incentive for faculty is in place to complete the COACHE survey of faculty job satisfaction. Nearly 50% of UNCW faculty have responded at the half-way point of the survey administration, and in efforts to achieve 100%, those faculty successfully completing the survey will receive...
INNOVATION AND CHANGE: Thriving in the 21st Century University Provost Battles encourages UNCW submissions for this summit focusing on black faculty, staff, and graduate students in the UNC system. While the UNCW campus hosted last year's inaugural event, Winston-Salem State University will host this second annual event from April 16-17.
The UNCW campus is slated to host the 2015 i3@UNC summer workshop and fellowship for developing new online and blended courses that improve learning outcomes and expand educational opportunities for North Carolinians. Applications are now being accepted for the UNC Instructional Innovation Incubator (i3@UNC) and they will receive...
UPCOMING Events
- Mar 23-Apr 8 WCE Dean Candidates' On-campus-Open Forums Scheduled
- Apr3-Good Friday, State Holiday
- Apr 10-Deadline for COACH Survey
- Apr 14, Tue-Spring Faculty Meeting, 2-3 p.m., EB162. (RESCHEDULED from Apr 1)
- Apr 16-17 Innovation and Change Summit, Winston-Salem State Univ
- Apr 23-Provost Farewell Reception for Dr. Battles, 2-3:30 p.m., Clocktower Lounge
- Apr 27-Leadership Workshop, Faculty Evaluations
- May 31-Jun 7 i3@UNC Summer Fellowship
- Previous News & Announcements
- Follow @UNCWProvost
Academic AffairsAlderman Hall 111
601 South College Road
Wilmington, NC 28403-5900
910-962-3876 | phone
910-962-3922 | fax


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If you're aged 15-23 - we'd love to hear from you.
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A day in the life of Eudel: How child sponsorship changed her life and community
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text:
The tunnelling area of a EEPROM memory device of the FLOTOX type is efficiently reduced in respect of the minimum areas obtained by means of current fabrication technologies, by forming the injection zone for the transfer of the electric charges by tunnel effect to an from the floating gate through an original self-aligned process, which allows to limit the dimensions of such a tunnelling area independently from the resolution limits of the available photolithographic technology.
1. An electrically alterable, nonvolatile, flowing gate type memory device, comprising a substrate (2) of semiconductor material having a channel region (9) of a first type of conductivity between a first (10) and a second region (7) of a second type of conductivity, formed at the surface of said semiconductor substrate, said channel region providing a region within the semiconductor capable of passing an electric current between said first and said second region, a first level of patterned conducting material, constituting said floating gate (1), extending over said channel region (9), substantially between said first (10) and said second region (7) and electrically insulated by means of a first layer (3) of dielectric material from said semiconductor substrate and by means of a second layer (4) of dielectric material from a second level of patterned conducting material, constituting a control gate (5), overlying said floating gate (1) and which further includes
a tunnel area defined on the surface of one of said first (10) and second (7) regions of the semiconductor substrate, said tunnel area being bordered on one side by the base of a portion of the length of a side wall of said floating gate (1) and being covered with a third layer (8) of dielectric material thinner than said first layer (3) of dielectric material;
a tapered, lateral, seamlike appendix (1b) of conducting material juxtaposed along said portion of the length of the side wall of said floating gate (1), the base of said juxtaposed, tapered, lateral, seamlike appendix (1b) of conducting material abutting on the surface of said third layer (8) of dielectric material covering said tunnel area;
said seamlike appendix (1b) being electrically connected to said patterned first level of conducting material constituting said floating gate (1).
2. The memory device according to claim 1, wherein said channel region is of p-doped silicon, said first and said second region are of n+ doped silicon and said appendix is superimposed relative to a drain region of the device.
3. The memory device according to claim 1, wherein said patterned first (1) and said second (5) levels and said seamlike tapered appendix (1b) of conducting material are made of doped polycrystalline silicon.
4. The memory device according to claim 1, wherein said first or gate layer (3) of dielectric material is a layer of silicon oxide having a thickness comprised between 300 and 500 Angstroms.
5. The memory device according to claim 1, wherein said third or tunnel layer (8) of dielectric material is a layer of silicon oxide having a thickness lower than 100 Angstroms.
6. The memory device according to claim 1, wherein said appendix is of polycrystalline silicon and is obtained by anisotropically attacking a layer of polycrystalline silicon of uniform thickness, previously deposited over at least a portion of the surface of said semiconductor chip.
7. The memory device according to claim 1, wherein said channel region and said first and said second region are all contained within a "well" region of said first type of conductivity, formed in a substrate of semiconducting material of a second type of conductivity.
8. The memory device according to claim 1, and comprising a plurality of said memory devices arranged in an addressable array of lines and columns on the semiconductor chip.
9. The memory device according to claim 8, wherein to each device of said plurality is associated, in series with the same, a select MOS transistor.
10. The memory device according to claim 9, wherein the control gate of all said floating gate type memory devices belonging to each line are connected to a single program line and all the gates of the relative select transistors are connected to a single select line.
11. The memory device according to claim 1, wherein said seamlike appendix (1b) is juxtaposed along said side wall of said floating gate (1) and is separated therefrom by an insulating layer (8) for a length of the side equal to said portion of the length of the side wall of said floating gate (1); said conducting seamlike appendix (1b) continuing, without discontinuities, around the entire perimeter of said patterned conducting material constituting said floating gate (1) and directly abutting on the side wall thereof and in electrical continuity thereto along portions of said perimeter outside said portion of the length of the side wall.
This application is a continuation, of Ser. No. 07/064,378 filed on June 22, 1987, now abandoned.
This invention relates, in general, to semi-conductor memory devices and more particularly, to electrically alterable, read-only memory devices, of the floating gate type, utilized in microprocessor based systems, in dedicated nonvolatile memories, in TV channel selectors and in other comparable systems.
Microprocessor - based systems and related arts, increasingly need read-only memory elements which can be altered by electrical means, i.e. memory elements which although being able to retain data written thereon for relatively long periods of time (several years), offer the possibility of erasing and rewriting (reprogramming) all or some of the data contained therein by electrical means and essentially without needing to remove the microcircuit containing them from the apparatus for subjecting it to erasing treatments (preceding an eventual, necessarily total reprogramming) contemplating irradiation as it was necessary with the read-only memory devices of the FAMOS type, from "Floating Gate Avalanche Metal Oxide Semiconductor".
Lately, the art has progressed to the point where a number of nonvolatile memory devices, electrically alterable, have been successfully produced. Microprocessors or systems incorporating such memory device equally known as EE-PROM from "Electrically Erasable - Programmable Read-Only Memory" or as EA-PROM from "Electrically Alterable Programmable Read-Only Memory", offer the great advantage, in respect to the devices of the prior art, of allowing both the erasing and rewriting of single bytes or the erasing of all the stored data.
The memory cell, that is the basic integrated semiconductor structure of such devices, is the so-called FLOTOX cell, from "Floating Gate Tunnel Oxide", which is described in detail in an article entitled: "16-J-EE-PROM Relies on Tunnelling for Byte-Erasable Program Storage" by W. S. Johson et al., "Electronics" of Feb. 28, 1980, pages 113-117. In this article, the author describes a FLOTOX structure where a cell utilizing a polycrystalline silicon floating gate structure, has such a structure charged with electrons (or holes) through a suitable "window" providing a thin layer of oxide between said floating gate structure and the monocrystalline silicon in correspondence to the drain region, by a Fowler-Nordheim tunnelling mechanism. That is, the mechanism exploited for trapping the charge in a floating gate electrode is conduction by tunnel effect of electrons (or holes) through a thin oxide dielectric layer caused by sufficiently high electric fields, generally over at least 10 MV/cm.
Understanding the prior art and its drawbacks, as well as the description of the FLOTOX cell object of the present invention, will be easier and more immediate by referring to a series of drawings annexed to the present specification, wherein:
FIG. 1 is a schematic, elevation cross sectional view of the structure of a FLOTOX memory cell of the conventional type;
FIG. 2 is a diagram of the relevant capacitive couplings of the FLOTOX structure of FIG. 1;
FIG. 3 is a schematic plan view of an elementary FLOTOX memory cell so as practically made on a semiconductor chip, according to a known method of fabrication;
FIG. 4 is a schematic plan view of an elementary FLOTOX memory cell as fabricated according to another known method, alternative to that of FIG. 3;
FIG. 5 is a schematic plan view of an elementary FLOTOX memory cell made in accordance with the present invention;
FIG. 6 is a schematic elevation cross section of the elementary FLOTOX memory cell of the present invention.
As schematically shown in FIG. 1, a typical configuration of a FLOTOX cell comprises a first level or layer of polycrystalline silicon 1, completely insulated, which constitutes the floating gate electrode. It is insulated from the monocrystalline silicon 2 by the layer of gate oxide 3, it extends over a channel region 9 of the MOS device which is comprised between a source region 10 and a drain region 7, and, for a certain distance, over this latter region. An insulating layer 4 of silicon oxide or of an equivalent dielectric, thermally grown or deposited by chemical vapor deposition (CVD), insulates the first level polycrystalline silicon 1 from a second level of polycrystalline silicon 5, which constitutes the so-called control gate electrode. An appropriate write/erase "window" 6 is present in the gate oxide layer 3 for the transfer of electric charges by a tunnelling mechanism to the floating gate 1, in correspondence of the drain region 7 of the MOS device. In correspondence of said window, the insulation between the floating gate and the silicon is represented by an extremely thin layer of silicon oxide 8, called tunnel oxide, whose thickness is normally less than 100 Å, in respect of the normal thickness of the gate oxide 3, which is typically greater than 250 Å and of the thickness of the insulating layer 4, which is typically greater than 200 Å.
In FIG. 1, is also represented the line selection or select transistor formed in series with the real memory cell, and whose gate is also known as "transfer gate".
The principle of operation of this memory cell is well known: electrons may be injected into the floating gate by applying an appropriate electric field between the same floating gate and the drain of the memory device; such an electric field is applied by means of a capacitive coupling through the control gate, the floating gate being unaccessible. Electrons may be removed from the floating gate by applying an electric field of opposite sign again between the floating gate and the drain: this is obtained by connecting the control gate to ground and imposing on the drain of the memory element a positive voltage by means of the transfer gate.
One of the most important technical problems encountered in realizing such memory cells concerns the definition of the tunnelling area, i.e. of the thin oxide "window" for the transfer of the electric charges from and to the floating gate. It is, in fact, necessary to strive to make this area as small as possible for two reasons.
The memory element may be diagrammatically represented as a capacitor network shown in FIG. 2. Essentially, the memory element, that is the floating gate (FG), is capacitively coupled, through the capacitance C1 of the dielectric layer 4, to the control gate (CG) 5; through the capacitance C2 of the gate oxide 3, to the semiconductor material of the drain (D), source (S) and channel (Ch) regions, i.e. to regions 7, 10 and 9; and through the capacitance C3 of the tunnel oxide 8, to the drain (D) region 7 . The potential which the floating gate of the memory device may reach, depends, obviously, upon the values of the voltages imposed between the control gate and the drain of the device; upon its capacitive coupling and upon the stored electric charge. Through appropriate considerations, one establishes that the potential reachable by the floating gate is given by: ##EQU1##
In order to minimize the voltages to be applied to the device for modifying its state; i.e. for effecting "WRITE" and "ERASE" operations, it is advantageous that the value of C3 be as low as possible: in consideration of the fact that the tunnel oxide must necessarily be extremely thin in order to be able to obtain through its thickness extremely intense electric fields (in the order of 10 MV/cm) so that the electric charges may overcome the energy barrier by the tunnelling mechanism, it is the tunnelling area which must be reduced as much as possible for keeping low the value of C3 and therefore for maximizing the constant α. Reducing the tunnel area is advantageous also for other reasons. The extremely thin dielectric layer of tunnel oxide, which is, as mentioned, subject to extremely high electric fields, undergoes a well known wear-out phenomenon, i.e. the oxide tends to deteriorate after a certain number of write and erase cycles. Such a phenomenon takes place because, even utilizing the most accurate techniques for forming such a thin layer of dielectric, it is impossible to avoid having its surface be completely exempt from lattice defects, which become a cause of the wear-out phenomenon. Therefore, reducing the size of the tunnelling area means, on the other hand, increasing the probability that such a small area be free of defects.
According to the known technique, the definition of the tunnel oxide area and its formation are, generally, carried out in the ways shown schematically in FIGS. 3 and 4.
FIGS. 3 and 4, represent plan views of a FLOTOX memory cell as schematically shown in FIG. 1, the identifying numbers of which are also used in FIGS. 3 and 4 for identifying the same parts. The "T" outline, indicated by the thick lines 12, defines the active area of an elementary memory cell, that is the area not covered by the field oxide. In both FIGS. 3 and 4, an area 13 is also shown, which is dedicated for the "column" electric connection of the elementary FLOTOX cell in a customary memory matrix made up of a large number of cells arranged in an array of lines and columns.
According to the fabrication process of the elementary memory cell of FIG. 3, the tunnel oxide area 6 is defined by the crossing over of two masks; i.e. of the mask used for defining the first level of polycrystalline silicon 1 (floating gate) and of a mask utilized for "opening" the gate oxide in an area shown with the dash line 14, over which the tunnel oxide will be grown.
According to another technology, shown in FIG. 4, the tunnelling area 6 is defined by an appropriate mask which determines the window through which the gate oxide will be attacked until the underlying is exposed before growing the tunnel oxide over this area.
Both the techniques shown in FIGS. 3 and 4, as well as other techniques similar to these, have the drawback of being limited by the definition and alignment characteristic of the particular photolithographic technique used or available. On the other hand, the necessity to reduce as much as possible the tunnel area induces working at the limit of definition with the result of imposing serious control and reproducibility problems on the fabrication process without obtaining decisively satisfactory results in terms of minimizing the tunnelling area.
From this, the tendency to use, for defining the tunnelling area, photolithographic technologies more advanced in respect to those normally used for all other layers of the integrated circuit, creating even more complex problems of compatibility among the different apparatuses used in the fabrication process.
There is, therefore, a clear necessity or utility to have a FLOTOX cell for EEPROM type memories which has minimal dimensions of the tunnelling area and which may be easily fabricated without requiring particularly sophisticated photolithographic technologies.
Such objectives and advantages are obtained through the nonvolatile, semiconductor, memory device of the floating gate type (also known as FLOTOX cell) having a new configuration and structure. The structure of the FLOTOX cell of the invention is such as to make it possible to minimize the tunnelling area independently of the limitations of the particular photolithographic technology utilized for defining the areas, allowing to define the extent of the tunnelling area by controlling essentially noncritical parameters of the fabrication process.
Differently from the FLOTOX cells of the known type, the cell of the invention no longer presents a tunnelling area, defined within a much larger superimposed zone of the floating gate over the drain region of the MOS device, but, in correspondence of the floating gate edge toward the drain region of the device, and after having removed the gate oxide and formed a layer of tunnel oxide over a sufficiently extended area containing at least a length of such an edge, an appendix (or seam) of polycrystalline silicon suitably electrically connected to the floating gate is formed. The lower base of such a seam of polycrystalline silicon results in being insulated from the monocrystalline silicon by the layer of tunnel oxide. Such an appendix or seam, formed along the edge of the floating gate, may advantageously be formed by a so-called "self-aligned" process which does not require any critical mask and the "width" of the base of such a seam, which determines the tunnelling area, may be easily determined by controlling the conditions under which an anisotropic attack of an appropriate layer or multilayer of matrix polycrystalline silicon, previously deposited on the surface of the wafer being processed, is conducted.
A further advantage of the particular configuration of the cell object of the present invention, is represented by the fact that being no longer necessary to provide an adequately large superimposed zone between the polycrystalline silicon of the first level (floating gate) and the drain region of the device, it is possible to further reduce the total area occupied by a single memory cell, i.e. making more compact cells.
The FLOTOX cell of the invention, as well as the fabrication process therof, will be more easily understood through the illustration of a particularly preferred embodiment of the invention itself and with reference to FIGS. 5 and 6.
Referring to FIGS. 5 and 6, wherein the same numbers are used for indicating parts corresponding or similar to those to the structures depicted in the preceding figures described in connection of the prior art discussion, the FLOTOX cell of the invention comprises, similarly to the cells of the prior art, a first level of polycrystalline silicon 1 (briefly poly 1), shown in the figures by a specific hatching and insulated from the surface of the semiconducting material by the dielectric layer of gate oxide, and which constitutes the memory element; i.e. the floating gate of the device.
Such a first layer or level of poly is placed over a channel region 9 of the semiconducting material chip 2 and extends laterally by a certain distance over the surrounding field oxide which defines the active area of the elementary cell indicated by the thick lines 12 in FIG. 5.
Preferably, the MOS device is an n-channel, i.e. the channel region 9 is created at the surface of a semiconducting monocrystal, e.g. of silicon, with a p-type conductivity i.e. of silicon doped with acceptor type impurities (e.g. boron).
The source 10 and drain 7 regions of the device will be customarily made by means of a heavy implantation and diffusion of donor type impurities (e.g. phosphorus or arsenic).
By means of an appropriate noncritical mask, whose outline may be the one indicated with a dash line 15 in FIG. 5, the gate oxide, previously formed on the surface of the silicon before depositing and defining the first level of poly 1, is removed until the silicon within the area comprised inside such an outline 15 and not covered by the first layer or level of poly 1 is exposed again. Subsequently, by heat oxidation under particularly stringent conditions of freedom from contaminants, the thin layer of tunnel oxide 8 is formed, which naturally will form also over the upper surface and over the vertical edges of the first layer of poly 1.
By means of another mask (also of noncritical character), whose outline may be that indicated with a dash/dot line 16 of FIG. 5, and preferably after having deposited a first matrix layer of about 500 Å of polycrystalline silicon, both the matrix layer of poly and the layer of tunnel oxide which was formed previously are removed within the area defined by the mask.
A second matrix layer of polycrystalline silicon with a uniform thickness, which is preferably comprised between 4000 and 5000 Å, is deposited over the whole surface of the device, which second layer, within the areas where the tunnel oxide was previously removed, will be deposited directly over the surface of the first level poly 1 and, therefore, in a condition of electrical continuity in respect of the latter.
As in a so-called self-aligned fabrication process, a strongly anisotropic attack, e.g. a RIE attack (from Reactive Ion Etching), conducted until a complete removal of the whole thickness of the layer or of the layers of matrix polycrystalline silicon (500+4000 or 5000 Å), will determine the formation of an appendix or seam (which may also be referred to as "spacer" for analogy with such seams or spacers of dielectric materials formed in the so-called self-aligned processes) 1a and 1b of polycrystalline silicon along the edges of the first level poly 1.
While such a seam (1a and 1b in the figures) will be continuous, it will be separated from the first level of poly 1 by the layer of tunnel oxide 8 (which further insulates it from the silicon as visible in FIG. 6) in correspondence to the edge of the floating gate 1 adjacent to the drain region 7 of the device; while, in correspondence to the edge of the floating gate 1 adjacent to the source region 10, the same seam of poly will be formed directly over the edge of the pre-existing first level of poly 1, having, as previously described, removed the thin layer of tunnel oxide from the area defined by the mask 16 (FIG. 5).
In this way, also the length of seam 1b formed over the edge of the floating gate 1 adjacent to the drain region 7, whose base surface, that is its width, determines the extent of the tunnelling area, results in being electrically connected to the pre-existing portion of the floating gate, represented by the first level of poly 1. In fact, at least within the superimposition zone of the poly over the field oxide on the right hand side of FIG. 5, the seam of poly 1b will be directly in contact with the first level poly 1, at least along the length indicated with 17.
Obviously, other methods may be used for ensuring the electrical continuity between the two portions forming the floating gate of the device, i.e. between the first poly 1, that is the real floating gate of the device, which overlies essentially the channel region 9, and the appendix (1a, 1b) formed along the edges of such first layer of poly 1, which, in correspondence to the superimposed zone (length 1b) with the drain region 7, constitutes the necessary tunnelling area for the trasfer of electric charges to and from the floating gate composite structure.
By utilizing modern deposition techniques of the polycrystalline silicon to form said first and second matrix layer and of RIE attack for removing them under conditions of strongly anisotropic attack, the width of the base of said seam (1a, 1b) comprised between 0.2 and 0.5 μm is easily obtainable and, by choosing for example to form a seam with base width of 0.3 μm, it is easy to obtain a tunneling area of 0.3�1.5=0.45 μm2 (in the case of a width of the active area occupied by the memory element of 1.5 μm, as it is current practice).
According to the known structures of the FLOTOX cell, a similar result would require a 0.7 μm technology; i.e. a technology with a definable minimum width of 0.7 μm and, therefore, an extremely sophisticated photolithographic technology, using X-rays instead of U.V. light.
The advantages and optimization possibilities during the design phase offered by the cell or memory device of the present invention are multiple, by virtue of the fact that to such a reduction of the area and therefore of the capacitance of the tunnel oxide, besides the improved characteristics of endurance to repeated write/erase cycles of the stored data, are associated other positive consequences as will be easily recognized by the expert technician.
For example, the original configuration of the cell of the invention makes it possible to reduce greatly also the capacitance C2 (FIG. 2), in so far the whole floating gate results more compact, no longer needing to extend on an adequately large area over the drain region; dimensions (in the "column"direction) and/or the superimposed area of the control gate and the floating gate above the surrounding field oxide for increasing the capacitance C1 may be reduced thus allowing a higher degree of integration.
The reduced criticity of the area definition operations (i.e. of the masks) will increase also the "yield" of the fabrication process.
The arrangement and connection of the single memory device, that is of the single FLOTOX cells and of the relative select transistor to form a memory line is the customary one, according to which the source regions of all the elementary cells are connected to ground, the control gates of all the cells are connected to a "program line", the gates of the select transistors are connected to a so-called "select line" and each drain terminal of the various select transistors constitutes the terminal of each "column" of the memory line.
For discharging the charge from all the elementary cells, the program lines and select lines are polarized with a sufficiently high voltage, while connecting to ground the column terminals.
To write a byte of data, the program line is connected to ground, while the columns relative to the selected byte are polarized with a high voltage or connected to ground in accordance with the data pattern, keeping the select line at a high voltage.
The preferred fabrication process for making the new memory devices of the present invention may be described by a sequence of essential process steps, illustrated hereinafter.
Over a semiconducting material of a first type of conductivity (typically a slice of monocrystalline p-doped silicon) and superficially pre-oxidized, a layer of silicon nitride is deposited.
After one proceeds to mask the active areas with photo-resist, to attack the nitride and after with the so-called field implantation; i.e. to implant acceptor type impurities in areas where will be formed the isolation structure (thick layer of field oxide) for separating the single elementary devices which must be formed on the surface of the monocrystalline silicon.
After having removed the masking material, the field oxidation is performed to grow the thick layer of silicon oxide in areas not previously covered by the silicon nitride layer. Simultaneously, the implanted dopant diffuses in the silicon in a region immediately underneath the field oxide, thus completing the formation of the isolation structure.
After having removed the silicon nitride layer and the thin layer of superficial oxide grown in said preliminary operation over the surface of the silicon single crystal, under particularly stringent conditions of absence of contaminant, a new layer of silicon oxide is grown to form the so-called gate oxide.
The first layer or level of polycrystalline silicon is thence deposited and, eventually, it is doped to increase its bulk electrical conductivity. The thickness of the first poly is preferably comprised between 4000 and 5000 Å.
A new masking operation is performed and the polycrystalline silicon layer is attacked, thus defining the edges of the first poly 1, that is of the floating gate of the memory device, along one direction.
A new photoresist mask for the so-called FLOTOX implant is formed, and impurities of a second type of conductivity (in the shown example of n-type conductivity) are implanted in the silicon to form the n+ -doped regions, which will constitute, respectively, the drain and the source regions of the MOS devices.
After having removed the masking material used for the said n+ implant, a new photoresist mask (whose outline is indicated with 15 in FIG. 5) is formed and through this mask the gate silicon oxide in the area not covered by the first level of poly is attacked until exposing the underlying silicon crystal.
After having removed the residual masking material, under particularly stringent conditions of freedom from contaminants, a thin layer of silicon oxide with a thickness of about 100 Å (tunnel oxide) is thermally grown.
Over this thin layer of tunnel oxide, a first thin matrix layer of polycrystalline silicon, having a thickness of about 500 Å, is deposited.
A new photoresist mask, whose outline is indicated with 16 in FIG. 5, allows to remove, inside such a defined area, both the polycrystalline silicon of said first thin matrix layer and the underlying thin layer of tunnel oxide.
After having removed the masking material, a second matrix layer of polycrystalline silicon, having a thickness preferably comprised between 3000 and 4000 Å, is deposited.
The matrix layer of polycrystalline silicon is then subjected to anisotropic attack by RIE technique and the removal of the polycrystalline silicon is conducted until removing a thickness equivalent to the deposited thickness. As it is well known to the expert technician and representative of the so-called self-aligned fabrication processes, in correspondence to the steps determined by the presence of the underlying layer of the first level polycrystalline silicon (floating gate 1), the anisotropic attack will leave a residual seam (1b and 1a of FIGS. 5 and 6) of polycrystalline silicon belonging to said matrix layer previously deposited in a uniform way over the whole surface.
At this point, it is possible to remove the gate silicon oxide layer, formed previously, from the active areas of the device not covered by the composite structure (1+1a+1b) of the floating gate of the memory device being fabricated.
After having defined by means of an appropriate mask the edges of the composite structure of the floating gate along a direction perpendicular to that of the previously defined edges, under particularly stringent conditions of freedom from contaminants, a new layer of gate silicon oxide may be formed again over the active area not covered by the composite structure of the floating gate. Simultaneously, the insulating dielectric layer 4 may be advantageously formed for insulating, above, the floating gate. Alternately such a top insulating layer of the floating gate structure may be formed separately by means of chemical vapor deposition of silicon oxide or of an equivalent oxide.
The second level of polycrystalline silicon is deposited, and, preferably, it is doped for increasing its bulk electrical conductivity.
The fabrication process contemplates then the growth of a layer of oxide over such a second layer or level of polycrystalline silicon, the definition by means of appropriate masks of the geometries of the second level of polycrystalline silicon (of the circuitry and of the memory cells) and the attack of the second level of polycrystalline silicon.
The fabrication process will proceed then according to custom as any other polysilicon gate, CMOS or NMOS process.
The semiconductor material 2 over which are formed the distinct elementary memory devices may also be a "well" region of a certain type of conductivity (e.g. p-doped silicon in the case of the example shown) formed in a substrate of a semiconductor material of a different type of conductivity (e.g. n-doped silicon).
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Originally written on Wrestle Scoop | Last updated 10/30/14
SYDNEY, AUSTRALIA - OCTOBER 08: WWE wrestler The Miz signs autographs for fans as he arrives for the Australian Nickelodeon Kids' Choice Awards 2010 at the Sydney Entertainment Centre on October 8, 2010 in Sydney, Australia. (Photo by Graham Denholm/Getty Images)
- MTV is featuring an article about The Miz appearing in The Marine 3: Homefront. - Randy Orton is schedule to appear at the Wizard World St. Louis Comic Con at the Americas Center in St. Louis, MO on Friday, March 22nd at 5:30PM. - CM Punk topped the WWE ESPN Power Rankings this week. The Undertaker came in at #2, while Ryback, The Rock and Triple H rounded out the top 5. Their article noted that Alberto Del Rio was losing steam due to his feud with Jack Swagger. They wrote: "Seems to be losing steam as champ, but that's more to do with people's disinterest in Swagger than ADR. This feud is already DOA, and we're still more than a month away from the big show."
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Call for Artists
Arts Center Killingworth's Annual Outdoor Autumn Arts Festival
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Registration Deadline is September 10, 2015. Early registration is highly recommended.
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To ensure a variety of artwork at the Festival, there is a maximum of 100 Exhibitors, limited by medium. Click the "Submit Artwork & Bio" button below to upload images and biography or email directly to firstname.lastname@example.com. If Festival participation is confirmed, Artists will receive a Registration Form and $70 Fee payment information via email.


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Now the audio crackling is worse!
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Lt. Commander
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Thanks for the tip, i went through and checked it all. Everything is set correctley. Sound works great in every other game, and windows itself. For some reason, i just have no sound in STO..no sound of any kind.
either the patch did it, (because before patch it worked just fine) or there is some hotkey mix that mutes all sound from game that i may have hit. Are you aware of any hotkeys to mute sound? thanks..
Sincerely, a very confused frustrasted person.
PS..do you think Cryptic would mind making the entire game black and white for me? Afterall, im playing a silent movie...
You probably already know it, but I just have to say for the sake of tech issues, was the game running when you checked the windows mixer? Each program now has its own volume control, but it has to be running for you to see it in the mixer. If STO is running and you open the mixer, make sure the speaker at the bottom doesn't have a slash through it. You can get to the mixer by right clicking your speaker in your taskbar down by the clock. If your task bar icons are hidden, you will have to click the small triangle next to the clock to get them to show.
Let me know what you find out.


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Well I went in for my Impressions today, wasn't as bad as I thought. Just had to keep in mind to breathe through my nose. First my dentist tried in my tray, and then she started with some purple gooey stuff, and did the top first for upper immediate denture. Then on to the green gooey stuff, breathe through nose again, when she went to pull it out I thought my teeth and gums were going to come out with it. It was stuck so tight, but she said it made a great impression, and thats what we want. Next was on to the bottom, for impression for my partial. She put some green gooey stuff on the tops of my teeth then, filled the tray with more of it, and made impression. Some fell out on my tongue, that was really gross. She said, she would be having me make some funny looking faces. I stuck out my tongue, wiggled it back and forth and had to close my lips around her finger.
Next appointment will be in 2 weeks for my bite registration & to pick out color and shape. It's getting closer & closer to my brand new smile.. Getting so excited now..


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DIY Patapon Cosplay
Unless you find their particular brand of chirpy percussion grating, the Patapon are a lovable bunch. Lovable enough to dress up as, perhaps? Sure, why not. »
Unless you find their particular brand of chirpy percussion grating, the Patapon are a lovable bunch. Lovable enough to dress up as, perhaps? Sure, why not. » 5/14/09 7:00am 5/14/09 7:00am
We don't expect you to be surprised by the contents of your Patapon 2 box, should you choose to pick it up, but let's be very clear about what's in that PSP game case. » 4/17/09 10:00pm 4/17/09 10:00pm
Sony reps have confirmed that there are no plans for a UMD release for Patapon 2 when the PSP game ships in North America next month, calling the move "a one time test case." » 4/13/09 8:00pm 4/13/09 8:00pm
Sony may be taking a rather unusual step at retail with Patapon 2, making the PSP a digital download only, but still offering a boxed copy at retail. How would that work, exactly? » 4/13/09 2:30pm 4/13/09 2:30pm
The first Patapon was something of a success. The PSP game was a hit with critics and some gamers, but never really set the sales charts on fire. » 3/24/09 2:00pm 3/24/09 2:00pm
Demos are advertising. Interactive, sometimes enjoyable advertising, true, but advertising nonetheless. Maybe not a great idea, then, when Sony restricted access to the Killzone 2 demo. Restricting access for a Patapon 2 demo is even worse. » 3/16/09 4:30am 3/16/09 4:30am
Masatomo Ueda likes Patapon. A lot more than you or I like Patapon. He likes it so much he's not only got himself a Patapon tattoo, but made himself Patapon prey in the process. » 1/06/09 7:30am 1/06/09 7:30am
Enjoying Patapon 2, Japan? Bet you are. Game's been out there since last month, but as of yet, us Westerners have been kept in the dark. Least, we were until today. » 12/18/08 12:00am 12/18/08 12:00am
Sony's Bend studio is currently working on Resistance: Retribution, coming to PSP in Spring 2009. After showing that title, a third-person shooter faithful to the first game, Sony's Jack Tretton casually dropped a few more: » 7/15/08 3:33pm 7/15/08 3:33pm
Five new Patapon 2 screens. Count 'em if you want. But know anyone who goes beyond counting, and starts chanting "pata", "pata", "pata" while browsing will be promptly shown the door. » 7/14/08 8:00am 7/14/08 8:00am
People liked Patapon so much that Sony Computer Entertainment Japan went and decided to put out another. That's right, this winter Japan will see Patapon 2. While the previous title was single player, the sequel will feature four player multi-player mode as well as new characters. PON-PON-PATA-PON! » 7/09/08 8:00am 7/09/08 8:00am


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What's New
- New document storage functionality.
- You can now import files from other apps (.PDF, .RTF, and .CSV supported) into a new file area accessible from the home screen.
- Interface update to allow attaching files to cells in your cell maps.
- View files attached to cells within Cell Storming alongside other media already supported (video, images, voice memos and text).
- Improved import screen functionality and additional interface fixes.
App Description
Cell Storming is a unique mind mapping app that uses media for laying out thoughts and ideas.
With Cell Storming you create mind maps (cell maps) by connecting hexagonal cells together and then adding media elements to these cells. You can add images, videos, voice memos, text, and web links to each cell on the map, which can then be viewed when browsing your cell map later on.
The v1.50 update included functionality to connect cells to other cell maps which enables the creation of multi-level hierarchical cell maps! This new linking functionality even extends to the flow media exports where any linked cell maps are examined for content (images, videos, audio) for exporting with their parent cell map(s).
New to the v1.60 release is the ability to import documents from other apps and attach them to cells in your cell map. These documents can be viewed within Cell Storming as you browse media stored in the cells.
Cell Maps are easily accessible from the home screen by browsing thumbnail images showing the latest state of each map.
Extensive export options enable you to share cell maps (including their media elements) with other Cell Storming users. Or you can generate images and PDFs of your cell maps for non-users. Dropbox support is built-in along with email and iTunes document sharing.
Cell Maps can also be printed via an AirPrint compatible printer.
* Please note that some export functionality requires an In-App Purchase to the full version before becoming available.
Cell Storming features Screen-casting functionality that allows you to present cell maps on your device to other local devices by sending what is displayed on your screen to the other devices (using local networking via Wi-Fi or Bluetooth).
Or use any of the many included export options to generate presentation videos, slides, documents, or movies.
* Note that screen-casting functionality requires an In-App Purchase to the full version.
Upgrade to the Pro version of Cell Storming via an In-App Purchase and access additional Flow Export functions that can generate and export media files defined by how your cell map flows (using connection arrows from cell to cell). Flow exports include text, audio, movies, image slides, and presentation video generation.
You can watch an example Flow Presentation Video created from Cell Storming Pro on YouTube here:
Use Cell Storming to map new ideas, document existing processes and entities, or use the media capture features to record events as they happen.
- Present themes and observations using media elements captured in cell maps.
- Set interactive tasks or games for students that require them to explain ideas through media or patterns.
- Use the screen-casting feature to observe how students are progressing with their tasks (* after upgrading to Standard version).
- Students can present their resulting cell maps using the flow presentation video export feature, or generate audio commentary files from voice memos recorded in cells (* after upgrading to Pro version).
Visit the Facebook page to leave comments or request new features you'd like to see in Cell Storming in future updates:
I would like to thank all users that have kindly left feedback in the App Store and the Cell Storming Facebook page. Please note that I am unable to reply to reviews left in the App Store, so if you are experiencing problems or have any queries about Cell Storming, please leave feedback on the Facebook page (accessed from the home screen in the App).
Thank-you for your support.
App Changes
- March 23, 2015 New version 1.60
- January 26, 2015 New version 1.52
- December 17, 2014 New version 1.50
- October 23, 2014 New version 1.43
- September 05, 2014 New version 1.42
- August 11, 2014 New version 1.41
- August 01, 2014 New version 1.40
- January 23, 2014 New version 1.32
- September 16, 2013 New version 1.31
- September 08, 2013 New version 1.30
- August 27, 2013 New version 1.23
- August 19, 2013 New version 1.22
- June 19, 2013 New version 1.21
- June 13, 2013 New version 1.20
- April 28, 2013 New version 1.12
- February 24, 2013 New version 1.11
- February 16, 2013 New version 1.10
- December 14, 2012 New version 1.06
- November 10, 2012 New version 1.05
- October 31, 2012 New version 1.04
- September 26, 2012 New version 1.03
- August 09, 2012 New version 1.02
- June 30, 2012 New version 1.01
- June 22, 2012 Initial release


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Key insights include:
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News and Events
(VIDEO) Miami HUNKS
Find out why Channel 10 News says College Hunks of Miami has been "causing a scene" around town!
Huffington Post Talks Kilts, College Hunks
Check out this Huffington Post article mentioning College Hunks alongside our kilted counterparts.
Flint MI College Hunks Featured on MLive!
College Hunks of Flint, MI was recently featured on MLive business news. Read all about it!
Good for the Planet, Good for the Economy
Stephen Bienko, Owner of College Hunks Hauling Junk North Jersey, teams up with Habitat for Humanity.
College Hunks of Oklahoma City Featured in Edmond Sun
Find out how Rick and Laura Turner went from the Air Force to entrepreneurship as owners of the Oklahoma City College Hunks location!
College Hunks of Northern NJ Teams Up With Habitat for Humanity
Find out how Stephen Bienko, Owner of College Hunks of Northern New Jersey, is working with Habitat for Humanity to Move the World.
Help Fight Unfair Moving Business Laws in Kentucky
Our Lexington, KY franchise owner is stuck in the middle between an outdated anti-competitive law and a desire to live out her entrepreneurial dream
Huffington Post Lists College Hunks as Dorm Room Success Story
Find out why the Huffington Post calls College Hunks a dorm room success story.
Lake County, IL Franchise Owner Featured In Libertyville Review!
Our team in Libertyville, IL has always been newsworthy to us, so it came as no surprise to find this article about owner Matt Johnson.
Franchise Times Interviews CEO Omar Soliman
With a new headquarters grand opening that attracted the mayor and the press, Omar Soliman, co-founder and CEO, feels as though the company has graduated.


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Your one stop station for the best classics rock, 80's 70's 60's and a flavor of Blues
Pop songs
Soundtracks, scores and more! From classics to new releases.
Top 40/ R&B/ Hot Hits An Allradionetwork.com partner station
Old and new, speaks to you.
My station Hong Kong Bay, we will jam all the Disco 80s to 90s artist, star singer the polish, Michael jackson, George Michael, Madona, Whitney Houston, Lionel Richie, Duran Duran, Tina Turner, David Bowie, Stevie Wonder, Pet Shop Boys, Cyndi Louper,
Playing the 70s 80s 90s and Today in 128K Stereo
The Hottest Rock on the Planet
My Retro Radio
Music to enjoy at the lake, beach or wherever you enjoy a cold beverage.
Deep album tracks, Classic Rock favorites, rarities, & lost artists spiced with lifestyle events & crossovers from other musical genres. It's a unique way to capture Progressive Radio's past!
Broadcasting from the But 'n' Ben, we play great music from the likes of Chet Baker, Springsteen, John Mayer, Hootie & The Blowfish and Ryan Adams. Check out what it's about on www.letgoradio.co.uk
A trippy, mind-bending mix of Psychedelic Rock/Pop/Soul, Garage Rock, Progressive Rock, Art Rock, Acid Rock, Stoner Rock, Space Rock, Heavy Blues, Heavy Psych, Freakbeat & Neo-Psychedelia Music (1960s-2010s).


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I shop a lot online and have very high expectations of all the online sellers I buy from MJM Magic is in my "best of the best" category....Read More ->
You guys did a great job. I ordered something that I needed quickly but seemed out of stock most everywhere. You got it for me and to me quickly....Read More ->


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Article ID: 2698560 - View products that this article applies to.
When you try to activate Microsoft Office 2010, you receive an error message that resembles the following:
An unspecified error has occurred. Your request cannot be processed at this time. Please try again later. (0x80070001)
Collapse this imageExpand this image
This issue may occur because a required registry key is not set correctly.
Fix it for me
To fix this problem automatically, click the Fix this problem link. Then click Run in the File Download dialog box, and follow the steps in this wizard.
Fix this problem
Microsoft Fix it 50176
Note This wizard may be in English only; however, the automatic fix also works for other language versions of Windows.
Collapse this imageExpand this image
Note If you are not on the computer that has the problem, you can save the automatic fix to a flash drive or a CD so that you can run it on the computer that has the problem.
Collapse this imageExpand this image
Let me fix it myself
Important This article contains information about how to modify the registry. Make sure that you back up the registry before you modify it. Make sure that you know how to restore the registry if a problem occurs. For more information about how to back up, restore, and modify the registry, click the following article number to view the article in the Microsoft Knowledge Base:
(http://support.microsoft.com/kb/322756/ )How to back up and restore the registry in Windows
More information
Some third-party programs may also use this key. By default, in a typical Windows XP installation, the PartMgr key is the only entry. However, some third-party imaging applications and encryption software may also use this key. Changing this key as described in this article may corrupt the third-party program. To work around this issue, uninstall the program that is responsible for the non-default entry, complete the steps in the "Let me fix it myself" section, and then reinstall the third-party program.
Article ID: 2698560 - Last Review: July 12, 2013 - Revision: 2.1
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Until recently, Flash-optimized Fibre channel storage has been extremely expensive to implement and many organizations were priced out of the procurement cycle. According to Gartner, however, the solid-state drive (SSD) market is expected to grow from some $390 million in 2012 to more than $4 billion in 2016. Emulex, a provider of hardware and software solutions for network connectivity, monitoring and management, offers five reasons why.
Related Topics : Fujitsu, Storage Virtualization, Desktop Virtualization, Virtual Tape Library, InfiniBand
True improvement began in 2014, a year that proved to be significant for products, technologies and architectures. The coming months will see even further acceleration in modernization. ... More >>
Companies need to define strategies around enterprise file synch and share (EFSS) and evaluate which solutions will make employees most productive while keeping vital information secure. ... More >>
Traveling for business or pleasure is easier than ever with access to real-time information; apps to help schedule your itinerary and explore new locales; and ever-smaller gadgets to help you connect, organize, work and play. ... More >>


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Tag Archives: viral video
Driver Attempts To Pull Over Cop
Students Mock Michelle Antoinette Obama: 'We Are Hungry'
The Blaze has the story behind this video that's gone viral, which mocks Michelle Obama's new school lunch mandate. This story is personal for my family. In previous years, I would give my children a snack when they came in from school, but this year, from the very first day they came in starving! At… Read More »
Going Viral: When Ordinary People Become Heroes
The latest "viral" video making the rounds on the internet is of a very fed up father taking out his frustration on his daughter's computer to teach her a lesson. Not only is it making the rounds online, it is actually being reported on the news. Where I come from, this is not really a… Read More »
Father Turns in Son for Video of Bullying and Beating
ABC News Video Michael Palomino, a sheriff's deputy of 30 years, made the hard decision to turn in his son Raymond, 17, after seeing him in a YouTube video along with six other teens stomping, punching and slamming another boy to the ground. Except for Palomino, all of the attackers covered their faces during the… Read More »


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Only five 2012 months to go, we're talking supersonic speed here. :cool:
(Make sure you select the highest quality YouTube setting so the photos are at their best)
Only six 2012 months to go! :cool:
January * February * March * April * May
Thank you Desertflower
Coming up (All times ET and approximate – tune in early just in case):
3:0 First Lady Michelle Obama delivers remarks at the University of Florida in Gainesville (C-Span * CNN)
4:15: VP Biden delivers remarks at a campaign event at the Port of Burlington (CNN)
4:20: President Obama delivers remarks at Schiller Park, Columbus (C-Span * CNN * CBS 1 * CBS 2)
6:55: First Lady Michelle Obama delivers remarks at the Tallahassee Leon County Civic Center
Will check links nearer the time
Enter your email address to receive notifications of new posts by email.


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5441-5443 Bay Harbor Drive
Indianapolis, Indiana, 46254
Commute to Downtown Brownsburg
Most errands require a car.
It is possible to get on a bus.
Flat as a pancake, good bike lanes.
Score Details
5441-5443 Bay Harbor Drive has a Walk Score of 30 out of 100. This location is a Car-Dependent neighborhood so most errands require a car.
This location is in Indianapolis.
Nearby schools include Deer Run Elementary School, Snacks Crossing Elementary School and Eagle Creek Elementary School.
The closest grocery store is Healthquicken.
Nearby coffee shops include Starbucks and Bee Coffee Roasters : Roastery. Nearby restaurants include Boathouse Grill, Subway and come fly with me.
5441-5443 Bay Harbor Drive is near Gilmer Canine Companion Zone, Eagle Highlands Neighborhood Park and Eagle Creek Park.
There are good bike lanes and the terrain is flat as a pancake. 5441-5443 Bay Harbor Drive is somewhat bikeable, there is minimal bike infrastructure.
Explore how far you can travel by car, bus, bike and foot from 5441-5443 Bay Harbor Drive.
Bus lines:
15 Riverside
0.9 mi
25 West 16th St
1.2 mi
View all Indianapolis apartments on a map.
Popular apartment searches include hardwood floor, fireplace and pool.
This location is in the city of Indianapolis, IN. Indianapolis has an average Walk Score of 29 and has 820,445 residents.


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As of 12/11/2013 this photo has had 5,995 views.
Wells Fargo and the Pony Express were the main source of communication delivering both mail and passengers. This photograph was shot during a reenactment of California Gold Rush Days in Old Town Sacramento, California with a Canon XTI and a 300mm zoom. The stage coach is original!
This would fit in at the Wild West group
Thanks George – I'll check it out!!
– Polly Peacock
Thanks Ellen!!
– Polly Peacock
Please consider putting this into the 49er With Wheels group.
Ground transportation vehicles built prior to and including 1949
Your cohosts Cee and Chris
Thanks again and will do!! :))
An instant fav! But then, my favourite "toy" as a child was my Britains overland stagecoach which I got as an Xmas present back in 1972. After a childhood of absorbing westerns & western culture, of course my real horses are of the Appaloosa & Quarter Horse variety :)
Is that too funny or what? I'm so glad that I was able to capture your childhood fantasy in real life!! That's great that you still have it boxed!!:)))))
– Polly Peacock
Thanks so much Judy – as always I am honored!! Thanks too, for your volunteer work as always!! :)))
– Polly Peacock
Congratulations!!! You have been featured in 49er With Wheels group.
Thanks so much again Cee and Chris!! It is much appreciated!! :)))
– Polly Peacock
Love the old fashioned look…Congrats on your feature!!! :D
Thanks so much Cee!! I'm so glad that you like it and thanks for the feature!! :)))
– Polly Peacock
Love this, would love to have a go driving it…. well done with the feature..Norm.
Yup, it would be a fun one to drive!! Thanks so much Norm!! :)))
– Polly Peacock
Well done! It is really hard to tell that it is a modern photo. I love all antique horse drawn vehicles. This is a nice one!! :)))))))))))
Thanks so much Laurie – I'm so glad that you like it!! :)))
– Polly Peacock


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STANFORD, Calif.--(BUSINESS WIRE)--
Here's a tip for those who like to predict corporate takeovers: Look for companies where the chief executive is turning 65.
Not 63, mind you. And not 67. The magical moment for mergers is specifically the traditional retirement age of 65.
A new paper coauthored by Dirk Jenter, associate professor of finance at Stanford Graduate School of Business, finds that even a two-year age difference has a striking impact on the likelihood that a company will be acquired.
Firms with a 65-year-old at the helm were almost 40 percent more likely to get an acquisition offer than firms with a 63-year-old in charge. They were also more likely to be acquired.
Does that mean that the 65-year-olds are just selling out their companies, hoping to grab one last big bonus before they move on to golf and piña coladas? Are they putting their interests ahead of shareholders?
That's the other big surprise. If there is a problem for shareholders, Jenter thinks, it's not that the retiring CEOs are too eager to sell; it's that the younger CEOs, many of whom may have just reached the pinnacle of their careers, are too reluctant. They have too much to lose.
"Everybody intuitively thinks that the older guys must be doing something wrong," says Jenter, who collaborated with Katharina Lewellen of Dartmouth's Tuck School of Business. "But we have no evidence whatsoever that the deals by 65-year-olds are bad deals. Their deals look as good as the deals by the younger guys. So the real question is, why aren't the younger guys doing more deals like this? From a shareholder perspective, I really like the older guys."
It's worth noting that the soon-to-retire CEO isn't necessarily the person who initiates the company sale. Jenter suspects that the initiative often begins with investment bankers and companies on the prowl for acquisitions. The aspiring dealmakers consciously look for companies where the CEO is at retirement age, because those CEOs have less to lose and will put up less of a fight.
"I've discussed this with investment bankers, and they say it's obvious to think about retirement incentives," Jenter says. "They look at a younger CEO and say that would be a messy takeover fight."
The Stickiness of Retiring at 65
One surprise in the study is that 65 is still such a pivotal year for CEO retirement. All people are living longer, and successful people are especially likely to remain active and healthy long after they turn 65.
But the researchers found that 65 is something like a fish-or-cut-bait moment for many executives. If they are thinking of retiring, that's the age at which they often do it. The CEO's likelihood of retiring spikes up very sharply — from about 13 percent for those at age 63 to almost 21 percent for those at age 65. For those who hang on past 65, the likelihood of retirement drops back to about 17 percent.
That retirement spike, specifically at age 65, was what initially motivated Jenter and Lewellen to see if they could find a link to merger activity.
The study has fascinating implications. Consider "golden parachutes," those huge bonuses that go to executives in the event that they lose their jobs because of a merger. Though golden parachutes are often criticized, their purpose is to offset a chief executive's natural inclination to oppose any takeover bid, even if it benefits shareholders, because it threatens his or her job.
Looking at the age-65 effect, though, Jenter thinks that golden parachutes should be bigger for younger CEOs and become smaller as they age. A CEO who is already likely to retire won't have as much to fear from a takeover and won't need as big a counter-incentive.
View the research
"CEO Preferences and Acquisitions," by Dirk Jenter and Katharina Lewellen.
- Mergers, Acquisitions & Takeovers
- Retirement Benefits
Katie Pandes, 650-724-9152


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Recommended Scooters from Just Gotta Scoot
Just Gotta Scoot's David Harrington has updated his list of recommended scooters for 2015.Read More
Just Gotta Scoot's David Harrington has updated his list of recommended scooters for 2015.Read More
Eric Ristau and Geneva Liimatta are back on Kickstarter with a documentary sequel to last year's adorable "Sit Stay Ride: The Story of America's Sidecar Dogs."Read More
The police department in Barcelona, Spain has taken delivery of a full fleet of BMW C Evolution electric maxi-scooters for use on patrol.Read More
A law before the Illinois state legislature aims to make motorcycle (and by extension scooter) awareness training part of the Driver's Ed curriculum. Given the threat cars pose to two-wheel operators, the more education the better, we say.Read More
A new street-focused special-edition of the Genuine Roughhouse 50 is one part scooter motard, one part Hooligan little brother. Meet the Roughhouse Titanium SE.Read More
While the AACA (The Antique Automobile Club of America) is perhaps not the first association that comes to mind when you think about mopeds and scooters. Yet this month, the AACA museum in Hershey, PA has put together a special exhibit just for small two-wheelers.Read More
Piaggio Group is recalling 2,600 Vespa and Piaggio brand scooters over faulty fuel pumps. Affected scooters can encounter stalling and restarting issues.Read More
Despite an ever growing number of new competitors, the venerable Vespa GTS 300 ABS managed to edge out its would-be successors in this shoot out video from Motorcycle.comRead More
Japanese model maker Satoshi Araki has created a pair of 1:35 scale Vespa masterpieces, complete with scale settings and what looks like decades of rust and patina.Read More
One YouTuber shows us just how hard one can push a Vespa GTS-250 into a corner and squeeze ever last mph out of it on the freeway. While it might not be the way I'd ride MY Vespa, it's a glimpse into just what Vespa's big scooter is capable of.Read More
Watch as a once neglected Honda Ruckus is reborn into a creative custom machine in this video from designer and owner Jeff Staple.Read More


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Current address Duke University Medical Center (DUMC), 326 Nanaline Duke Bldg., Durham, NC, USA
Delayed behavioural aging and altered mortality in Drosophilaβ integrin mutants
Article first published online: 9 SEP 2003
DOI: 10.1046/j.1474-9728.2003.00060.x
Aging Cell
Volume 2, Issue 5, pages 257–264, October 2003
Additional Information
How to Cite
Goddeeris, M. M., Cook-Wiens, E., Horton, W. J., Wolf, H., Stoltzfus, J. R., Borrusch, M. and Grotewiel, M. S. (2003), Delayed behavioural aging and altered mortality in Drosophilaβ integrin mutants. Aging Cell, 2: 257–264. doi: 10.1046/j.1474-9728.2003.00060.x
Publication History
- Issue published online: 9 SEP 2003
- Article first published online: 9 SEP 2003
- Accepted for publication 25 July 2003
- aging;
- behaviour;
- geotaxis;
- integrin;
- lifespan;
- mortality
The genetic basis for aging is being intensely investigated in a variety of model systems. Much of the focus in Drosophila has been on the molecular–genetic determinants of lifespan, whereas the molecular–genetic basis for age-related functional declines has been less vigorously explored. We evaluated behavioural aging and lifespan in flies harbouring loss-of-function mutations in myospheroid, the gene that encodes βPS, a β integrin. Integrins are adhesion molecules that regulate a number of cellular processes and developmental events. Their role in aging, however, has received limited attention. We report here that age-related declines in locomotor activity are ameliorated and that mean lifespan is increased in myospheroid mutants. The delayed functional senescence and altered mortality in myospheroid flies are independent of changes in body size, reproduction or stress resistance. Our data indicate that functional senescence and age-dependent mortality are influenced by β integrins in Drosophila.


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Too rainy in Ohio
nosambosMay 23, 2008
I'm in Cleveland. April was rather dry but May has been wetter than usual. The plants in my native area are looking a bit yellowed and the random milkweed popping up is extremely chlorotic. Have any other locals noticed this? I guess the solution is dousing the area with Miracid fertilizer with iron. Any other suggestions?


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- Avengers
- Batman
- Superman
- Star Wars
- Wonder Woman
- Captain America
- Spider-Man
- Nightwing
- Green Lantern
- Flash
- Deadpool
- Iron Man
- Teenage Mutant Ninja Turtles
- Guardians Of The Galaxy
- X-Men
- Thor
- Transformers
- Incredible Hulk
- Man Of Steel
- Wolverine
- Batgirl
- DC Heroes And Justice League
- Supergirl
- Punisher
- Joker
- Robin
- Star Trek
- Venom
- Game Of Thrones
- Big Bang Theory
- Aquaman
- Fantastic 4
- Shazam
- Green Arrow
- Walking Dead
- Catwoman
- Harley Quinn
- Doctor Who
- Ghost Rider
- Daredevil
- DC Comics Merchandise
- Marvel Heroes And Avengers
- Supervillains
Green Lantern Pint Glass Box Set
Where there is one Green Lantern, there is usually a few more just around the corner! Those guys are hardly ever alone. I guess that's the perks of belonging to an intergalactic police force that utilizes the emerald light of will power! Phew! That's quite a job description! The Green Lantern Pint Glass Box Set has 4 different 16oz pint glasses - each one containing a different image! We have one with famous Green Lantern Hal Jordan looking rather angry, one with Jon Stewart doing the stoic thing, one with with a whole smattering of Green Lanterns(plus Kilowog), and the last one has SINESTRO! I know right! A SINESTRO pint glass! Forgive me - he's one of my favorite characters! Well, you know I'm getting the Green Lantern Pint Glass Box Set so why don't you join me? I'll hold you a spot in line.
"Hand Wash Only!"
Proposition 65 notice for California residents.
More Details:
- - Rating: 4.0 out of 5 based on 1 reviews.
- - Licensor: Dc
- - Call Us: 866-787-4376
- - Need Help?
Got these and damn, they are pretty solid and look fantastic


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2005 AUDI A4 2.0T Contact for Price
- Contact for Price
- Mileage 87,543 Miles
- Mileage 87,543 Miles
- Color Gray
- Engine 4 Cyl
- Mpg Avg: 22
- Location Honolulu, HI
You can save multiply searches so it's good to give some valid names, so you can easily change filters.
The saved search under this name already exists. Please use a different name.


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Colorful produce doubles as edible bowls for easy, hearty meals in these stuffed recipes. And portion control is built right in. It's a win-win! Try 'em out then tell us what you think in the comments below!?
more slideshows
Sleeping Beauty: Overnight Masks to Fix Any Skin IssueTaking the phrase "night shift" to the next level.
13 Ways To Serve Up a Grain BowlBecome a pro with these delicious recipes.
The Best Success Tips From SELF-Made WomenChannel these powerful women next time you need a lift—for
Stuffed-Veggie Recipes (Portion Control Built In!)
One pepper has nearly a day's worth of vitamin A, an antioxidant key to healthy skin and teeth.
The Skinny: 425 calories per serving, 15 g fat (5 g saturated), 51 g carbs, 3 g fiber, 22 g protein
KEYWORDS: Portion Control,Recipes,Stuffed,Vegetables
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