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Criminal Defense
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The Orlando Criminal Defense Attorneys of NeJame Law in Central Florida, have been defending the rights of those charged with all type of criminal offenses for over 25 years. We are experienced in all Courts, whether they are State, Federal or Juvenile. Additionally, the Central Florida Criminal Defense Attorneys at NeJame Law have handled cases throughout approximately fifteen (15) states throughout the United States, as well as in the Virgin Islands. Mark NeJame, the Firm's Senior Partner and Founder, has compiled a team of criminal defense attorneys who are experienced and capable in virtual every type of criminal defense case.
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Have you or a loved one been injured? Are you facing a dispute with an insurance company? You need a personal injury attorney from NeJame Law on your case. The personal injury attorneys at NeJame Law spent many years defending insurance companies and are now putting that experience to work for individuals, like you, who have been injured. We make sure that our clients get adequate financial compensation for any injuries they have received. Our personal injury lawyers are dedicated to their clients and provide the representation that you need to fight big insurance companies that want to deny your claims.
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The Immigration Division of NeJame Law is based in Orlando, Florida, and is located in proximity with the United States Citizenship and Immigration Service (USCIS) office and the Immigration Court. Our US Immigration Attorneys are well known for effectively handling all type of immigration matters including deportation defense, adjustment of status representation, business visas and employment visas, citizenship, asylum and consular processing cases.
Immigrant Visas
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Foreclosure Defense
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Have you stopped making payments on your loan? Have you received a final demand letter from the bank demanding full payment of the outstanding balance of your loan? Have you been served with foreclosure papers?
Foreclosure is the process whereby the mortgage holder (i.e. the bank) sues the borrower (i.e. homeowner) to secure title to the property in partial or full satisfaction of the outstanding balance of the mortgage holder's note when the borrower has violated and failed to cure the material term(s) of the note, mortgage and loan agreement. The most common uncured, mortgage violation default is the non-payment of the outstanding loan debt.
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NeJame Law provides many services related to the formation, structuring, capitalization, governance, sale and purchase of businesses. Our attorneys have extensive experience providing business owners advice on choosing a corporate form (C-Corporation, S-Corporation, LLC), articles of incorporation and protection for corporate board members as well as guidance on how to protect intellectual property, buy-sell, employment and other contracts and on how to structure internet businesses.
Breach of Contract
Partnership Dissolution
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Whether you have personal or commercial real estate issues, the skilled practitioners at NeJame Law have the experience to take on any challenge. If you're in need of foreclosure defense, seeking a loan modification or considering bankruptcy, our team has the knowledge to advise you, the understanding to help you through a difficult time and the strength to stand up to big banks for your rights.
If you're a developer or a building owner involved in a landlord-tenant dispute, attempting to negotiate a development agreement or mired in a regulatory action, our attorneys have the experience to negotiate and the confidence to litigate if that is in your best interest.
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If you've suffered because of the actions of another or have been accused of harming someone's interest and are being sued, the attorneys at NeJame Law have broad experience pursuing and defending civil litigation. We understand that litigation can be stressful and costly. Our team can provide you with sound strategies to best position you for mediation and settlement before a matter reaches the courts.
Breach of Contract
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If you're a software developer, author, filmmaker or the owner of a business that creates products, designs or unique formulas or processes, you are the owner of intellectual property. But to retain its value, you need to take positive steps to protect your property. The attorneys at NeJame Law are highly experienced in intellectual property protection, licensing and litigation.
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Issues of family law — child custody, child support, divorce, guardianship — are especially sensitive. The family law attorneys of NeJame Law have the experience and the compassion to help you with any situation you may be facing.
Custody: Parental Timesharing/
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Divorce: Contested and Uncontested
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Bankruptcy filings in the United States can fall under one of several chapters of the Bankruptcy Code, such as Chapter 7 (which involves liquidation of assets), Chapter 11 (company or individual "reorganizations") and Chapter 13 (debt repayment with lowered debt covenants or payment plans).
Our attorneys are specialized in handling even the most complex of bankruptcies including Chapter 12 and more.
Chapter 11
An appeal typically begins with filing a notice of appeal in the trial court. The party appealing -- known as the "appellant" -- must also designate an appellate record. The appellate record consists of materials from the trial court that the appellant would like to present to the appellate court and use in appeal.
NeJame Law has skilled and knowledgeable attorneys to handle criminal appeals, either from current clients after the trial phase or new clients with reason to appeal a decision in the lower court.
Standards of Appellate Review
Appellate courts do not retry cases or hear new evidence. Instead, appellate courts review what occurred in the trial court to see if the proper procedures were followed and the proper law was applied. Because of the limited nature of this review, the issues properly raised on appeal can be significantly different from those that are raised at trial.
The appellate court will usually defer to the trial court or jury on factual issues. However, the appellate court has the final word on what the law is. On issues of law -- for example, the interpretation of a statute or the Constitution -- the appellate court will not defer to the trial court but will instead independently decide the issue.
On an appeal from a judgment after a trial, the appellate court will reverse the judgment only if it finds the trial court committed legal errors that were prejudicial during the trial. Examples of such legal errors include the trial court giving bad jury instructions, admitting or excluding certain evidence and failing to follow proper procedures. If the appellate court finds such legal errors, the Court will then determine whether these errors were prejudicial. A legal error is considered prejudicial only if there is some reasonable chance that it was likely to have affected the result in the case. Thus, minor legal errors are usually not grounds for a reversal.
Appellate Panel and Oral Argument
An appellate panel decides appeals. Usually the appellate panel in an intermediate appellate court that consists of three judges chosen randomly from the pool of available appellate judges on the courts. In appeals to state supreme courts and the U.S. Supreme Court, the entire court usually hears the appeal.
Once the briefing is completed, the appellate court may hear oral arguments from the attorneys representing both sides. Not all cases have oral arguments, so it is important to retain an appellate attorney who is skilled in both oral and written argument. The time between the close of briefing and oral argument varies tremendously between different courts. By the time of oral argument, the judges on most appellate courts will have read the briefs and thoroughly considered the issues.
In the federal courts and some state courts, the court may chose to decide a case without the necessity of oral argument. At the close of oral argument the case is submitted to the appellate court for a decision.
The appellate panel will sometimes issue a written opinion explaining why it reached the decision that it did. If the appellate court deems it appropriate, the written opinion will be published in the official reports and will be binding authority for litigants in the future.
Review by a Higher Court
A party who is dissatisfied with the results on appeal can petition a higher appellate court to review the case. In most states, this would be the state supreme court. In the federal system, it is the U.S. Supreme Court. (If a federal issue is involved, the U.S. Supreme Court can take cases from the state appellate courts.)
With a few exceptions (like death penalty appeals), the state supreme courts and the U.S. Supreme Court are not required to take any particular case; they choose what cases they will decide. Consequently, the petition asking the higher court to take review must be carefully drafted, as the vast majority of cases seeking review from a state Supreme Court are denied. Moreover, if there is no written opinion and the appellate court has affirmed the trial court decision per curiam then the case cannot be appealed.
NeJame Law with its principal office in Orlando, has experienced and trained appellate lawyers who can handle all types of appeals. Our lawyers are educated regarding evolving legal issues and are trained to be cognizant and knowledgeable of existing precedent. If you are in need of a Central Florida based Law Firm which handles appellate cases throughout Orlando, the State of Florida and, in certain instances, throughout the United States, please feel free to contact us. You may call us 7 days a week at (407) 245-1232, e-mail us at firstname.lastname@example.com or fill out our Online form. We will make certain that you speak to an Orlando appellate attorney from our Law Firm to assist you.
We handle a variety
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When facing assault charges in Florida, there are many things that can affect how you are charged under the law. There are times when the police or prosecution over charge a person and that is why it is imperative to have a skilled assault defense attorney evaluate your case. MORE
Due to today's laws a sexual offense conviction can have a serious and long-lasting impact in anyone's personal and professional life. Some sex crime trials attract the media attention, making the accused publicly known and leaving a social stigma even if he or she is later found not guilty. MORE
Bail & Bail Bond
Once a person is arrested they are typically entitled to a bond. Usually a bond is set in accordance with a local bond schedule, although bonds can be higher or lower than the amounts stated on the schedule. MORE
In the State of Florida, the Legislature has significantly increased the penalties and the period of incarceration for certain types of violent crimes as a reaction to the public outcry for protection of victim's rights and the fear of violent crimes among much of the public. MORE
Robbery and burglary charges are the types of offenses that prosecutors take most seriously. These charges can require an offender to serve time in prison depending on the circumstances. MORE
Crimes of Violence
In the State of Florida, the Legislature has significantly increased the penalties and the period of incarceration for certain types of violent crimes as a reaction to the public outcry for protection of victim's rights and the fear of violent crimes among much of the public. MORE
Domestic Violence
The general public is now more conscious about domestic violence and the State of Florida along with Florida law, is very serious about arresting and prosecuting individuals accused of domestic violence. MORE
Drug Offenses
Drug offenses are taken very seriously and can be charged and prosecuted under either Federal or State law, or sometimes even both. It is important to know that State and Federal laws are increasingly providing for tough prosecution on drug trafficking, drug possession and other drug related offenses and the criminal penalties can at times be quite harsh. MORE
Driving Under the Influence (DUI)
If you need an Orlando DUI lawyer NeJame Law can help. Driving under the influence of an alcoholic beverage (DUI), or drunk driving, is a serious offense in Florida. The defense of DUI cases may be challenging and should be handled by highly experienced drunk driving defense lawyers. Each Orlando DUI attorney at NeJame Law has the knowledge and experience required to fight your Florida DUI case. MORE
Driving While License Suspended
or Revoked (DWLS)
At NeJame Law we represent people throughout Orlando, Central Florida and the State of Florida who are charged or arrested for driving while license suspended or revoked (DWLSR) (DWLS). Every criminal defense attorney at our Firm realizes how very important having a valid driver's license is and how serious it can be for a client to lose his or her license. MORE
Fraud in Florida has recently regained a renewed focus and priority for law enforcement. With a challenged economy, more fraud and alleged schemes to defraud are occurring. As such, more State and Federal resources are now being utilized to focus on the investigation, arrest and prosecution of fraud cases in Orlando, Central Florida and the State of Florida. MORE
Internet Crimes
Technology Law is an emerging field of law that is deals with any legal issue that can arise out of the technology we use every single day. Since nearly everything is we do involves technology, Technology Law overlaps with many other areas of law. MORE
If you or someone you know has been arrested for manslaughter, we suggest that you consult with an experienced and aggressive attorney immediately in order to preserve your rights and to give the attorney as much time as possible to investigate the charges. MORE
If you are facing charges on a murder case we suggest that you contact an experienced and aggressive homicide attorney from NeJame Law in Orlando, Central Florida, immediately. Murder or homicide is considered by many to be the ultimate crime which will likely lead to severe punishment if the accused is convicted. MORE
Post Conviction Relief
A motion for Post Conviction relief is usually a person's last resort to overturn a criminal conviction or be released from prison after a direct appeal has not been successful. An Orlando post conviction attorney from our Law Firm can help you in evaluating whether you have grounds for relief after a trial or after all appeals have been MORE
The Racketeer Influenced and Corrupt Organizations Act (commonly referred to as RICO Act) can be prosecuted in either State or Federal Court. Both jurisdictions provide for extended criminal penalties. There is also a civil cause of action that can be brought under RICO for acts performed as part of an ongoing criminal organization. MORE
Robbery and burglary charges are the types of offenses that prosecutors take most seriously. These charges can require an offender to serve time in prison depending on the circumstances. MORE
Under Florida law, stalking is communicating or physically following someone for no legitimate reason, in a way that causes emotional distress. Stalking includes harassment in person, over the Internet, over the telephone or anywhere else where a person can be reached. MORE
Sex Crimes
Due to today's laws a sexual offense conviction can have a serious and long-lasting impact in anyone's personal and professional life. Some sex crime trials attract the media attention, making the accused publicly known and leaving a social stigma even if he or she is later found not guilty. MORE
Commonly referred to as shoplifting, these types of theft cases may present a variety of defenses for the criminal defense lawyer to evaluate and consider. MORE
Violation of Probation (VOP)
If you or someone you know have been charged with drug trafficking, drug possession, drug distribution or any other drug-related crime you need to contact an experienced Florida drug defense attorney as soon as possible. The defense team of NeJame Law in Orlando, Central Florida, has the knowledge, skills & experience you need to represent and defend you in court for any drug related offense. MORE
Weapons Offenses
Firearms and weapons charges are among the offenses that the Florida Legislature takes most seriously and their punishment is extremely severe. A defendant may be subject to mandatory minimum prison sentence pursuant to the notorious 10/20/Life. MORE
White Collar Crimes
The term white collar crime was initially defined "...as a crime committed by a person of respectability and high social status in the course of his occupation.". Today, this term is generally used to refer to non-violent crimes usually committed for financial gain. White collar crimes are typically considered to be committed by "white collar workers" such as government employees, MORE
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text:
Postal Explorer >
Publication 52 - Hazardous, Restricted, and Perishable Mail >
Appendix C > USPS Packaging Instruction 3A
A flammable liquid having a flashpoint greater than 20° F (–7° C) but less than 100° F (38° C) is mailable in domestic mail via surface transportation, if the liquid can qualify as a consumer commodity or ORM-D material, and all applicable requirements in 343 are met.
Flammable liquids having a flashpoint of 20° or less are not mailable.
Flammable liquids mailed under DOT-SP 9275 must be prepared and marked as specified in 343.27.
Separate packaging requirements apply depending on the flashpoint of the flammable liquid.

subset: commoncrawl


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A xylene exchange is performed on a stock solution of BST of greater then 99.999% purity dissolved in methoxyethanol, and a carboxylate of a dopant metal, such as magnesium 2-ethylhexanoate is added to form a precursor. The precursor is spun on a first electrode, dried at 400° C. for 2 minutes, then annealed at 750° C. to 800° C. for about an hour to form a layer of accurately doped BST. A second electrode is deposited, patterned, and annealed at between 750° C. to 800° C. for about 30 minutes. Excellent leakage current results if the dopant is magnesium of about 5% molarity. For other dopants, such as Mg, Nb, Y, Bi, and Sn the preferred dopant range is 0.2% to 0.3% molarity. The magnesium-doped material is used as a buffer layer between the electrodes and BST dielectric of an undoped BST capacitor.
1. A method of fabricating an integrated circuit containing an accurately doped barium strontium titanate layer, said method comprising the steps of:
providing a liquid precursor comprising barium, strontium, titanium and a dopant selected from the group consisting of magnesium; niobium; yttrium; bismuth; tin; dysprosium; combinations of barium, zinc, and niobium; combinations of strontium and tantalum; and combinations of strontium, bismuth, and tantalum;
applying said precursor to an integrated circuit substrate;
treating said precursor to form a doped barium strontium titanate layer on said substrate.
2. A method as in claim 1 wherein said precursor comprises a carboxylate.
3. A method as in claim 1 wherein said step of providing a liquid precursor comprises mixing a BST stock solution with a dopant solution containing said dopant.
4. A method as in claim 3 wherein said dopant solution comprises a carboxylate.
5. A method as in claim 1 wherein said precursor includes a solvent selected from the group consisting of xylenes, n-butyl acetate, and 2-methoxyethanol.
6. A method as in claim 1 wherein said dopant comprises magnesium.
7. A method as in claim 1 wherein said barium, said strontium, and said titanium are high purity research grade materials.
8. A method as in claim 1 wherein said step of treating comprises drying said precursor at a temperature of between 200° C. and 500° C. in an atmosphere selected from air and nitrogen.
9. A method as in claim 8 wherein said temperature is about 400° C.
10. A method as in claim 1 wherein said step of treating comprises annealing at a temperature of between 600° C. and 850° C.
11. A method as in claim 1 wherein said step of providing comprises providing a precursor in a first solvent and performing a solvent exchange to substitute a second solvent for said first solvent.
12. A method as in claim 11 wherein said second solvent comprises a solvent selected from the group xylene and n-butyl acetate.
13. A method as in claim 12 wherein said first solvent is 2-methoxyethanol.
14. A method as in claim 11 wherein said first solvent provides a precursor that stores well and said second solvent provides a precursor that has a lesser viscosity than said precursor with said first solvent.
15. A method as in claim 1 wherein said dopant is at a concentration of from 0.1% molarity to 5% molarity.
16. A method as in claim 15 wherein said dopant is at a concentration ranging from about 0.2% to 0.3% molarity.
17. A method of fabricating an integrated circuit containing an accurately doped metal oxide layer, said method comprising the steps of:
providing a liquid precursor comprising barium, strontium, titanium and a magnesium dopant;
applying said precursor to an integrated circuit substrate;
treating said precursor to form a magnesium-doped metal oxide layer on said substrate.
18. A method as in claim 17 wherein said magnesium is at a concentration ranging from 0.1% molarity to 10% molarity.
19. A method as in claim 18 wherein said magnesium is at a concentration of about 5% molarity.
20. A method as in claim 17 wherein said precursor includes magnesium carboxylate.
21. A method as in claim 20 wherein said dopant comprises magnesium 2-ethylhexanoate.
22. A method as in claim 17 wherein said precursor is a high purity research grade precursor solution.
23. A method of fabricating an integrated circuit containing an accurately doped metal oxide layer, said method comprising the steps of:
providing a high purity liquid precursor comprising a dopant and a plurality of metals in proportions capable of yielding a metal oxide having a formula selected from a group consisting of
A'A"BO3, and
wherein A, A', A", B, B', and B" are metal cations and O is oxygen;
applying said precursor to an integrated circuit substrate; and
treating said precursor to form a doped metal oxide layer on said substrate.
24. A method as in claim 23 wherein said precursor comprises a solvent selected from semiconductor grade purity xylene, n-butyl acetate, and 2-methoxyethanol.
25. A method as in claim 23 wherein said step of providing comprises providing a precursor in a first solvent and performing a solvent exchange to substitute a second solvent for said first solvent.
26. A method as in claim 25 wherein said second solvent comprises a solvent selected from the group xylene and n-butyl acetate.
27. A method as in claim 26 wherein said first solvent is 2-methoxyethanol.
28. A method as in claim 23 wherein said first solvent provides a precursor that stores well and said second solvent provides a precursor that has a lesser viscosity than said precursor with said first solvent.
This application is a continuation-in-part of U.S. patent application Ser. No. 08/165,082 filed Dec. 10, 1993 pending which is itself a continuation-in-part of U.S. patent application Ser. No. 08/132,744 filed Oct. 6, 1993, now U.S. Pat. No. 5,514,822 which in turn is a continuation-in-part of U.S. patent application Ser. No. 07/993,380 filed Dec. 18, 1992, now U.S. Pat. No. 5,456,945 U.S. patent application Ser. No. 07/981,133 filed Nov. 24, 1992, now U.S. Pat. No. 5,423,285 and U.S. patent application Ser. No. 07/965,190 filed Oct. 23, 1992 now abandoned; the latter two applications are in turn continuations-in-part of U.S. patent application Ser. No. 07/807,439 filed Dec. 13, 1991 now abandoned.
The invention in general relates to the fabrication of integrated circuits utilizing metal oxides, such as barium strontium titanate, and more particularly to the use of doping in the fabrication of such materials in integrated circuits.
Metal oxide materials, such as barium strontium titanate, commonly referred to as BST, are known to be useful in making integrated circuit thin film capacitors having high dielectric constants. See for example, Kuniaki Koyama, et al., "A Stacked Capacitor With (Bax Sr1-x)TiO3 For 256M DRAM" in IDEM(International Electron Devices Meeting) Technical Digest, December 1991, pp. 32.1.1-32.1.4, and U.S. Pat. No. 5,122,923 issued to Shogo Matsubara et al. It is known that adding dopants to barium titanate affects its electrical and dielectric properties. See A. J. Moulson and J. M. Herbert, Electroceramics: Materials-Properties-Application, Chapman and Hall, New York pp. 32-35 and 242-247. In particular, it is known that the dissipation factor, tan δ, may be reduced by adding dopants, such as manganese (Mn). See Moulson et al. at p. 247. However, while the effects of some dopants is known, it is also known to be much harder to accurately control electrical properties in oxides using dopants than it is in other materials, such as silicon semiconductors. See Moulson et al. at page 34. It is well-known that oxides typically include high levels of impurities, with even "high purity" oxides including impurities of greater than 10 parts per million. Id. at p. 34. Further, the usual methods of making oxides such as BST, i.e. sputtering and pressing of powders, are inherently hard to control. In both processes the dopants tend to be more concentrated in some parts of the fabricated device than in others. Other methods of adding dopants which are commonly used in integrated circuits, such as ion implantation, are not as effective with metal oxides as with silicon, since the metal oxide are much denser materials. Thus with the prior art processes, while one can add dopants to metal oxides, and while one can measure the amount of dopants present in a metal oxide and the electrical properties, it has not been possible to accurately predict the precise amount of dopants that will be present in a metal oxide fabricated according to a given process. Thus it has not up to now been possible to precisely control the electrical properties of metal oxides, on the microscopic level needed to produce consistent integrated circuits, with the same accuracy that one can control the electrical properties of silicon semiconductors, for example. Moreover, integrated circuits require that the materials be made as thin films, and the thin films made with the prior art processes always produces electrical properties were a hundred to ten thousand time less desirable than the properties of the bulk devices made with the same materials.
It is well-known, to use the process of spin coating for making certain types of insulators in integrated circuits, such as spin-on glass (SOG); the process had also been used for making metal oxides such as barium titanate, strontium titanate, and barium strontium titanate. See G. M. Vest and S. Singaram, "Synthesis of "Metallo-organic Compounds For MOD Powders and Films", Materials Research Society Symposium Proceedings, Vol. 60, 1986, pp. 35-42, Robert W. Vest and Jiejie Xu, "PbTiO3 Thin Films From Metalloorganic Precursors", IEEE Transactions On Ultrasonics, Ferroelectrics, and Frequency Control, Vol 35, No. 6, November 1988, pp. 711-717, and "Metalorganic Deposition (MOD): A Nonvacuum, Spin-on, Liquid-Based, Thin Film Method", Materials Research Society Bulletin, October 1989, pp. 48-53. However, the quality of the thin films made in these references was again far too poor for use in integrated circuits. The electronic properties were far inferior to the corresponding properties measured on bulk devices. Thus these processes have, up to the time of the present invention, been used for screen printing of metal oxide inks in making relatively macroscopic parts of circuits. Further, this spin-on method resulted in very little control over crystal defects. Since crystal defects have as great an effect on electrical properties as dopants, this spin-on technique did not appear to be a suitable candidate for a fabrication process in which the electronic properties of metal oxides could be controlled by use of dopants. Thus, up to now, no method of fabrication of thin film oxides, such as BST, that permits accurate control of their electronic properties utilizing doping and electronic properties comparable to the bulk properties, such as can be done with silicon and gallium arsenide semiconductors, has been known.
The invention solves the problem of providing control of electronic properties of metal oxides via doping with sufficient accuracy for microscopic integrated circuit applications by utilizing liquid precursors. Preferably a metal carboxylate or metal alkoxide is used as the dopant precursor. The process incorporates a variety of careful controls. For example, copending and co-owned U.S. patent application Ser. No. 08/165,082, incorporated herein by reference, discloses that by carefully controlling the drying and annealing process, defect-free BST integrated circuit devices can be made by applying liquid precursors to integrated circuit substrates. This careful control of the drying and annealing process is also useful when adding dopants to the material. The use of extremely high purity materials, i.e. materials with less than 10 parts per million in impurities, is also an important factor. In addition, the selection of the solvent and the molarity of the precursor solution, are also important. In the preferred embodiment of the invention, an alcohol, such as 2-methoxyethanol, is used as the basic solvent during precursor preparation and storing, and a xylene exchange step is performed just prior to fabrication to change the solvent to xylene. Preferably, the molarity of the precursor should be from 0.10 to 0.35 moles.
The use of a liquid precursor process to add dopants to BST and other metal oxides permits much more accurate control of the microscopic content and distribution of the dopants throughout the metal oxide. Thus the electronic properties can be more precisely controlled than with prior art methods of adding dopants. Numerous other features, objects and advantages of the invention will become apparent from the following description when read in conjunction with the accompanying drawings.
FIG. 1 is a cross-sectional view of an integrated circuit capacitor according to the invention;
FIG. 2 is a cross-sectional view of another embodiment of an integrated circuit capacitor according to the invention which includes low leakage dielectric buffer layers;
FIG. 3 is a cross-sectional view of a further exemplary embodiment of an integrated circuit capacitor according to the invention which includes adhesion and barrier layers;
FIG. 4 is a flow chart of a process according to the invention for fabricating a doped BST capacitor;
FIG. 5 is a graph of the dielectric constant, ε, and dissipation factor, tan δ, versus magnesium content for magnesium-doped BST made according to the process of the invention;
FIG. 6 is a graph of leakage current versus voltage for non-doped BST capacitors and a 5% magnesium-doped BST capacitor made according to the process of the invention;
FIG. 7 is a graph of leakage current versus voltage for non-doped BST capacitors and a 0.5% niobium-doped BST capacitor made according to the process of the invention;
FIGS. 8 through 14 are graphs of the dielectric constant, ε, and dissipation factor, tan δ, for BST capacitors doped with niobium, yttrium, bismuth, tin, BaZn1/3 Nb2/3 O3, 2xSrTa2 O6, and strontium bismuth tantalate, respectively, as a function of the mole percentage of the respective dopant; and
FIG. 15 is a graph of the dielectric constant and current density for BST capacitors doped with dysprosium oxide as a function of the mole percentage of the dopant.
Turning to FIG. 1, a thin film capacitor 10 as fabricated in the examples discussed below is shown. The capacitor 10 is formed on a single crystal silicon wafer 11 having a thick layer 12 of silicon dioxide formed on it in a known manner. An adhesion layer 13 of titanium of about 200 Å thickness is then formed followed by a first electrode layer 14 of platinum, of about 2000 Å thickness. Both layers 13 and 14 are preferably formed by sputtering. Then a layer 15 of a dielectric, preferably a metal oxide, such as BST, is formed, the BST 15 preferably doped as described in detail below. Then a second electrode 16, also preferably of about 2000 Å thick platinum, is formed, again preferably by sputtering.
In the integrated circuit art, the silicon crystal 11 is often referred to as a "substrate". Herein, "substrate" may be used to refer to the silicon layer 11, but more generally will refer to any support for another layer. For example, the substrate 18 for the dielectric layer 15 is, immediately, the platinum first electrode 14, but also can interpreted broadly to include the layers 11, 12, and 13 as well. The term "metal oxide" herein means a material of the general form ABO3 where A and B are cations and 0 is the anion oxygen. The term is intended to include materials were A and B represent multiple elements; for example, it includes materials of the form A'A"BO3, AB'B"O3, and A'A"B'B"O3, where A',A",B' and B" are different metal elements. Preferably, A,A',A", are metals selected from the group of metals consisting of Ba, Bi, Sr, Pb, Ca, and La, and B, B', and B" are metals selected from the group consisting of Ti, Zr, Ta, Mo, W, and Nb. Preferably the metal oxide is a perovskite. Many of these metal oxides are ferroelectrics, though some that are Classed as ferroelectrics may not exhibit ferroelectricity at room temperature. However, since most such ferroelectrics have relatively high dielectric constants, these materials are often useful in high dielectric constant capacitors, whether or not they are ferroelectric. Preferably the doping materials are selected from the group consisting of magnesium, niobium, yttrium, bismuth, tin, dysprosium oxide, BaZn1/3 Nb2/3 O3, SrTa2 O6, and strontium bismuth tantalate. In the discussions below, and particularly with respect to the abscissas of FIG. 5 and 8 through 15, the amount of dopant material is expressed in terms of mole % units, sometimes abbreviated as mol. %. For single element dopants, and small dopant percentages, this unit may be thought of as a measure of the number of atoms of the dopant material as a percentage of the number of A atoms or number of B atoms in the oxide. More accurately and more generally, the unit is the total number of dopant molecules as a percentage of the total number of molecules in the crystal. For example, if the material is Ba0.7 Sr0.3 TiO, the dopant is dysprosium oxide, and the dopant mole percentage is 10%, then for every ten molecules of BST and dysprosium oxide combined, there is 1 molecule of dysrosium oxide.
Another embodiment of a capacitor 20 according to the invention is shown in FIG. 2. this capacitor includes substrate 21, insulating layer 22, adhesion layer 23, first electrode 24, second electrode 28, buffer layers 25 and 27, and dielectric layer 26, which is preferably a ferroelectric material or other metal oxide. Buffer layers 25 and 27 are preferably made of a low-leakage dielectric material such as magnesium-doped BST fabricated as described below. Other materials that are useful as the buffer layers 25 and 27 are SiO2, Si3 N4, Ta2 O5, and SrTiO3. The low-leakage buffer layers 25 and 27 are used when the principal dielectric 26 has more electrical leakage than desirable; for example, some ferroelectric materials of high polarizability, such as those used in non-volatile memories, may have too high of leakage current, and therefore low-leakage buffer layers 25, 27 are useful to decrease the overall leakage of the capacitor 20.
A third embodiment of a capacitor 30 according to the invention is shown in FIG. 3. This embodiment also includes substrate 31, insulating layer 32, adhesion layer 34, first electrode 36, second electrode 38, and a dielectric material 37 made by the process described below. It also includes a polysilicon layer 33 and a barrier layer 35 preferably made of titanium nitride. The details of these layers and their fabrication, as well as adhesion layer 23 are given in U.S. patent application Ser. No. 08/165,133 which is hereby incorporated by reference.
Many other materials may be used for any of the layers discussed above, such as silicon nitride for insulating layers 12, 22, and 32, gallium arsenide, indium antimonide, magnesium oxide, strontium titanate, sapphire or quartz for substrate 11, 21, or 31, and many other adhesion layer, barrier layer, and electrode materials. Further, it should be understood that FIGS. 1, 2, are not meant to be actual cross-sectional views of any particular portion of an actual electronic device, but are merely idealized representations which are employed to more clearly and fully depict the structure and process of the invention than would otherwise be possible. For example, the relative thicknesses of the individual layers are not shown proportionately, since otherwise, some layers, such as the substrate 21 and insulator 22, would be so thick as to make the drawing unwieldy. It should also be understood that the capacitors 10, 20 and 30 preferably form a portion of an integrated circuit 19, 29, and 39 which includes other electronic devices, such as transistors, other capacitors etc., which other devices are not shown for clarity. In addition, the doped dielectric layers 15, 26, and 37 may be incorporated into other devices, such as ferroelectric FETs, as well as capacitors.
Turning now to FIG. 4, a flow chart of the process for fabricating capacitors 10, 20 and 30 according to the invention is shown. The process shall be discussed in terms of the embodiment of FIG. 1, but could just as well be discussed in terms of the other embodiments also. In step P41 a first electrode 14 is deposited, preferably by sputtering platinum as is known in the art. A BST stock solution is prepared in step P42. This step may be done just prior to deposition of dielectric 15, but is generally done well in advance. The solution preparation steps P42, P43, and P44 are preferably done under an inert atmosphere. The BST stock solution is a precursor as described in U.S. patent application Ser. No. 08/132,744 which is hereby incorporated by reference. In summary, it is made by reacting barium with 2-methoxyethanol and 2-ethylhexanoic acid, adding strontium, allowing the mixture to cool, adding titanium isopropoxide and 2-methoxyethanol, and heating to obtain a final BST concentration of about 0.5 moles. If a dopant is to be added, a dopant precursor solution is prepared in step P43. It preferably is made by reacting a the dopant with a carboxylic acid, such as 2-ethylhexanoic acid, to form a carboxylate, such as 2-ethylhexanoate, or by reacting the dopant with an alcohol, such as 2-methoxyethanol, to form a metal alkoxide, or a combination of an alcohol and a carboxylic acid to form an alkoxycarboxylate. Some carboxylates that may be used in addition to 2-ethylhexanoates are octanoates and neodecanoates, though the carboxylates having 8 carbon links are preferred. The solvent exchange step P44 is then performed. The solvent exchange primarily replaces a solvent that is convenient for manufacturing the stock solution and/or which makes a precursor that stores well, for a solvent that has a good viscosity for the application process, such as spinning. Here "good" viscosity preferably means a lower viscosity than the stock solution. If an carboxylate dopant precursor is used, the solvent exchange is preferably performed on the BST stock solution first, as shown by the solid arrow, and then the dopant solution is added as shown by the dotted arrow. However, if an alcohol-based dopant precursor is used, the BST stock solution and the dopant solution may be combined and the solvent exchange performed afterwards. Preferably, in the solvent exchange, xylene is exchanged for the 2-methoxyethanol solvent of the BST stock solution. In the xylene exchange, xylene is added to the solution and the solution is heated to about 130° C. while stirring to boil away the other solvents, such as 2-methoxyethanol. The solvent exchange step, while very useful, is not necessary. The mixed BST and dopant solution may be used directly, particularly for some dopants. N-butyl acetate also has been found to be a solvent that works well, thus the solvent exchange may be an n-butyl acetate exchange. This method of forming the precursor allows extremely accurate amounts of the dopant to be added to the BST, and the thorough stirring in the solvent exchange step, or other mixing step, ensures uniform dispersion of the dopant throughout the BST. The carboxylate process is important here because gels are not formed, which gels would tend to impede the mixing and uniform dispersion of the dopant into the BST. All liquid chemicals used in making the precursors, such as xylene, n-butyl acetate, and 2-methoxyethanol are preferably semiconductor grade chemicals, which is a well-known term in the semiconductor art.
In step P45 the precursor is applied to the substrate 18, preferably by spinning at 1500 RPM to 2000 RPM for 20 seconds to 60 seconds. However, other application methods may be used, for example, a misted deposition process as described in U.S. patent application Ser. No. 07/993,380, which is hereby incorporated by reference. In steps P46 and P47 the precursor is treated to form metal oxide dielectric material 15 on substrate 18. The treating is preferably by drying and annealing. In step P46 the precursor is dried, preferably in air or dry nitrogen, and preferably at a relatively high temperature as compared to the prior art, i.e. at from 300° C. to 500° C. for from 1 minute to 20 minutes. Typically it is performed at 400° C. for 2 minutes in air. This high temperature drying step has been found to be essential to obtain predictable properties in doped BST. The application and drying steps, P45 and P46, may be repeated several times to form several coats of the film to fabricate a layer 15 of the desired thickness. Then, in step P47, the dried precursor is annealed to form dielectric 15. The annealing is referred to as the 1st anneal to distinguish it from a later anneal. The anneal is Preferably performed in oxygen at a temperature of from 650° C. to 850° C. Typically, it is performed at 800° C., for 40 minutes to 90 minutes, and preferably about 60 minutes, in O2 in a push/pull process including 5-30 minutes and preferably 10 minutes for the "push" into the furnace, and 5-30 minutes and preferably 10 minutes for the "pull" out of the furnace. Careful control of this anneal temperature and time is also essential for predicable doping results. In step P48 a second electrode 16 is deposited as discussed above. The device is then patterned, which may comprise only the patterning of the second electrode if any patterning was done after deposition of the first electrode. It is important that the device be patterned before the second anneal step P50 so that patterning stresses are removed by the anneal and any oxide defects created by the patterning are corrected. The second anneal preferably performed at the same temperature as the first anneal though variance within a small temperature range of 50° C. to 100° C. about the first anneal temperature is possible with some dopants. The time for the second anneal is generally being about 30 minutes, though again a range of times from about 20 minutes to 90 minutes is possible depending on the sample. Again, careful control of the anneal parameters is important to obtain predictable results. Finally, in step 51 the device is completed and evaluated.
Another factor that is important in obtaining good, predictable results in the doped materials is the use of high purity barium, strontium and titanium in making the precursors. Usually, what is called "high purity" barium, strontium, and titanium in the trade has impurity levels for the more abundant elements of between 1 in 104 and 1 in 105 atoms of impurities. Impurity levels this high will be referred to herein as R&D grade materials. Dopings made with such R & D grade materials do not provide as predictable results as dopings made with high purity materials, i.e with impurities of less than 1 in 105 atoms of impurities for any one element, or less than 10 parts per million. Table 1 shows the measured impurity levels in parts per million for the high purity precursor solutions and the R&D grade precursor solutions. Where an entry is left blank the impurity was not specified.
TABLE 1______________________________________ HIGH PURITY SOLUTION R & D SOLUTIONIMPURITY Impurity Level in PPM Impurity Level in PPM______________________________________Na 4.3 65K 2.4 52Mn 0.6 31Fe <0.3 8Ni 0.2Mg <0.1Ca 1.9Zn 0.1Al 0.3Ag <0.1Cd <0.1Cu 0.6Li <0.1Mo <2Co <0.1Cr <0.05U <0.002 <5Th <0.002 <5______________________________________
As indicated in Table 1, the high purity solution did not have any impurity element with a level higher than 4.3 parts per million, and the total impurities were only about 13 parts per million. The R & D grade solutions had impurity levels of 10 to 100 times higher. Preferably the impurity level for most impurities is 1 part per million or less.
In the examples discussed below, all BST was made from a stock solution having a stoichiometric content of barium, strontium and titanium as specified in the formula Ba0.7 Sr0.3 TiO3. In most cases the dopant precursors were commercially available hexanoates or were made by reacting the dopant with 2-ethylhexanoic acid to make a metal 2-ethylhexanoate: for example, 5.1385 grams (9.9168 millimoles or 518.16 formula weight) of commercially available yttrium 2-ethylhexanoate was dissolved in xylenes and heated to about 135° C. until a volume of about 120 milliliters remained with a mass of 116.5671 grams and a solution concentration of 0.085074 millimole of yttrium per gram of solution. However, octanoate acid was found also to be useful, as for example, yttrium octanoate was used for some yttrium doped samples with little difference in results. Patterning was done in an etchant comprising 1 part of 49% HF and 499 parts water.
Samples were made using high purity solutions of BST without any doping and with magnesium doping. In the case of the high purity, non-doped sample, a xylene exchange was performed on a solution of BST stock solution as described above. The xylene exchange included about 0.5 cc of formamide condensation, and the final precursor solution had a molarity of 0.32M. The precursor was applied to the substrate 18, was spun at 1500 RPM for about 30 seconds, dried at 400° C. for 2 minutes on a hot plate in air, and annealed at 750° C. in oxygen for 70 minutes including 10 minute push in and 10 minutes pull out. The final thickness of the BST layer 15 was 1600 Å. The top electrode 16 was deposited and patterned and the capacitor 10 was annealed again at 750° C. for 30 minutes in oxygen, including a 10 minute push in and pull out. For the magnesium-doped samples the parameters were the same except that a magnesium precursor was added in step P43 and the final thickness of the dielectric 15 varied about 10%, with the sample for the 5% magnesium-doped sample (FIG. 6) being about 1750 Å. Samples were made for a variety of magnesium dopings both with the parameters given above and also with the same parameters except that both the first and second anneal steps, P47 and P50, were done at 800° C. instead of 750° C. The electrical properties of the samples were evaluated in step P51 with results as shown in FIGS. 5 and 6. FIG. 5 shows the real part of the dielectric constant, ε, the scale for which is on the left, and the dissipation factor, tan δ, the scale for which is on the right, plotted against the magnesium content in mol. %. The samples which were annealed at 750° C. are shown with solid circles, while the samples which were annealed at 800° C. are shown by open circles. The dielectric constant rises at first then drops significantly with increased doping, while the dissipation factor drops slightly or remains about the same. The anneal temperature makes a significant difference with respect to the dielectric constant, ε, but makes little difference with respect to the dissipation factor, tan δ. FIG. 6 shows the leakage current in amps plotted against voltage in volts for the 5% magnesium-doped sample and for the non-doped BST samples. The leakage current for the magnesium-doped sample stays low, less than 102 amps all the way out to 6 volts. The leakage current for the non-doped BST samples goes up by a factor of nearly 100 for the 800° C. annealed sample and by a factor of nearly 1000 for the 750° C. annealed sample. The leakage current result for the 5% magnesium-doped sample is excellent. The leakage current stays low for the whole range of voltages used in conventional integrated circuits.
Similarly sample capacitors 10 as shown in FIG. 1 were made of pure BST and compared with a 0.5% niobium-doped BST sample. The final precursor in each case had a molarity of 0.19M adds was spun at 2,000 RPM for 30 seconds. All anneals were done at 800° C. and were for 1 hour for the first anneals P47 and 30 minutes for the second anneals P50. The final thickness of the pure BST sample was 1,220 Å and the final thickness of the 0.5% niobium-doped sample was 1,194 Å. The measured leakage current in amps versus the voltage in volts is shown in FIG. 7. Again the leakage current for the niobium-doped sample is significantly better than for the pure BST sample, though not as dramatic as for the 5% magnesium-doped sample. FIG. 6 shows a graph of the real part of the dielectric constant, ε, and the dissipation factor, tan δ, versus the mol percent of doping as measured for another series of samples. In this case the BST stock solution was made with R & D grade purity materials. In these curves the solid circle represents the measurements on a 1980 Å non-doped BST sample, and the open circles represent the results for niobium samples varying from 1940 Å to 1970 Å. These curves suggest that the dielectric constant may not fall off as fast for the niobium-doped samples as for the magnesium doped samples. However, it must be understood that the results for 5% magnesium-doped BST were extraordinary: though the dielectric constant as low as 156, the leakage current was in the range of 10-9 A/cm2, the range required for practical device application, up to an applied voltage of 6 more than volts. Thus, the BST according to the invention is very useful for device applications requiring a low leakage current capacitors with a higher capacitance than the approximately 4 capacitance of silicon-based dielectrics.
FIGS. 9 through 14 show the results of measurements of the real part of the dielectric constant, ε, and the dissipation factor, tan δ, versus doping in mol percent for yttrium, bismuth, tin, BaZn1/3 Nb2/3 O3, 2xSrTa2 O6, and strontium bismuth tantalate, respectively. In FIGS. 9 and 10, the solid circles represent samples that were annealed at 750° C. and the open circles represent samples annealed at 800° C. In FIGS. 11 through 14, the solid circles represent the non-doped sample of 1980 Å thickness mentioned above with respect to FIG. 8, while the open circles represent samples doped as indicated along the abscissa and having dielectric layer 15 thicknesses in the range of 1940 Å to about 2085 Å. In the case of these figures, R & D grade BST was used.
Sample capacitors 10 as shown in FIG. 1 were also made with dysprosium oxide, Dy2 O3, as the dopant material in Ba0.7 Sr0.3 TiO3. The stock BST solution was a 0.5M BST solution (R & D grade) as described above diluted to 0.3M with n-butyl acetate; e.g. 2 ml of the above BST solution were added to 1.3 ml n-butyl acetate to yield the final BST precursor solution. The dopant solution was dysprosium 2-ethylhexanoate in xylene, with about 0.1109 mmole of Dy per gram. The solution was spun at between 1600 rpm and 2000 rpm and yielded a film of about 700 Å-900 Å per coat. The drying step P46 was performed at 400° C. on a hot plate, in air for 2 minutes. The first anneal step P47 was at 750° C. for 80 minutes in O2, and the 2nd anneal P50 was at 750° C. for 30 minutes in O2. The thickness of the dielectric 15 in the samples was from 1720 Å to 1840 Å.
The dysprosium oxide-doped samples were tested with the results shown in FIG. 15. In this figure, the dielectric constant (upper curve/right scale) and current density, J, in amps/cm2 (lower curve/left scale), are plotted as a function of concentration of the Dy2 O3 dopant in mol. %. In this instance, the current density was chosen as the measured function instead of leakage current to make it easier to compare the data to measurements in bulk materials, which are usually given in terms of resistivity, since this parameter is of more importance and easier to measure in bulk samples. (Current density is inversely, but simply related to resistivity.) The results of FIG. 15 agree very closely with the results obtained for bulk dysprosium oxide-doped Ba0.7 Sr0.3 TiO3. This shows that the process of making doped-BST thin films according to the invention is far superior to prior art processes.
The above results indicate that a wide variation of electrical properties can be obtained by adding a variety of dopants to BST. From FIGS. 5, 8, 9, 10, and 11, one sees that in a doping range of about 0.2% to 0.3% for the dopants Mg, Nb, Y, Bi, and Sn, there is some improvement over the dielectric properties of undoped BST; i.e. the dielectric constant tends to be higher and the leakage current is the same of less. These results indicate that there is an optimum amount of doping to ensure an improvement of the dielectric properties of the Ba0.7 Sr0.3 TiO3 capacitor. This greatly simplifies the search for the ideal dopant, since one can focus the search in the 0.2% to 3% range, rather than test a much larger number of samples over a broader range.
An important feature of the invention is the ease with which specific doping concentrations can be added. In the prior art, the precise dopant level that one attempted to obtain would generally not be obtained due to inherent randomness in the processes such as sputtering. Rather, in the prior art, one would fabricate a device, then test it to see what concentration was obtained. In the method of fabrication according to the invention, precise and repeatable doping levels can easily be obtained. It should be apparent that the present invention lends itself to manufacturing much more readily than the prior art.
The results also suggest that some materials with very low leakage current but reduced dielectric constant may be made with the doping process of the invention. For example, the 5% magnesium-doped sample (FIG. 6) had a better leakage current than shown by any BST thin film capacitor in the prior art, insofar as the inventors are aware. Such a material lends itself to the capacitor 20 structure shown in FIG. 2. The 5% doped magnesium BST is used for buffer layers 25 and 27, and an undoped BST material is used for the dielectric 26. The low leakage of the 5% magnesium doped layers 25 and 27 provide an extremely low leakage while the undoped BST provides a high dielectric constant. This combination significantly increases the ability for the capacitor 20 to store readable charges even when the capacitor 20 is made very small as compared to the prior art integrated circuit capacitors.
A further feature of the invention is that the metal oxide precursors preferably contain impurities of less than 10 parts per million per impurity element. Relatively small amounts of impurities appear to give the best results in many cases. For example, it appears that for 0.2 moles of magnesium doping the dielectric constant is at a maximum and the leakage current is at a minimum. In general, it appears that a dopant range of 0.1% to 0.5% will provide good electrical properties, and preferably a range of 0.2% to 0.3% give the best properties.
There has been described novel structures and processes for fabricating integrated circuit capacitors using doped metal oxides, such as BST. It should be understood that the particular embodiments shown in the drawings and described within this specification are for purposes of example and should not be construed to limit the invention. Further, it is evident that those skilled in the art may now make numerous uses and modifications of the specific embodiment described, without departing from the inventive concepts. For example, the doped materials and methods described with respect to the capacitor 10 of FIG. 1 may be used with other capacitor structures, such as that of FIG. 3 or many other variations of capacitors; or the buffer layers 25 and 27 of FIG. 2 may be used in combination with the capacitors of FIGS. 1 and 3 as well as other capacitor structures. The structures and processes may be combined with a wide variety of other structures and processes. Equivalent materials, different material thicknesses, and other methods of depositing the substrate and electrode layers may be used. It is also evident that the process steps recited may in some instances be performed in a different order. Or equivalent structures and processes may be substituted for the various structures and processes described.
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Perfect Girlfriend Getaway to Nashville
Music City is hot right now, and it's not just because of the beauties in ABC's hit show Nashville. And while everyone can find fun here, Nashville is becoming an increasingly popular choice for girls' getaway weekends.
Maybe it's the crooning country-strong cowboys, or perhaps the wealth of affordable dining and lodging options—or it could be that Broadway, the city's main drag, has shed its seedy past and now feels a bit like an Old West town on a permanent vacation. Whatever the reason, Broadway is no stranger to visiting bachelorette groups—there's even a new company dedicated to planning these parties in Music City: Bachelorette Nashville. Hit the bars on a Saturday night and you're bound to run into at least one veiled tiara–wearing group of girls. But wedding or not, downtown Nashville's an excellent place to let loose with the ladies.
What to Do
If your ideal day or night consists of bar-hopping to hear a variety of country bands, this is the town for you. Honky tonks and bars line Broadway and the surrounding streets, each adding its own spin on the live music scene.
Huge and often packed, The Stage is anchored at one end by just that: a large stage, where bands play everything from pop country and rock covers to their own music. Nearby on Broadway, Whiskey Bent is a little more intimate; you can dance to the live music without bumping into the crowds. It's one of the few bars in Nashville that doesn't allow smoking inside. Tucked a few blocks away in Printers Alley, Fiddle and Steel Guitar Bar is a favorite musician hangout; Rascal Flatts got its start here. It's a chill spot to start or end your night.
But while country is king in Nashville, you don't have to spend all day with the beer-swilling, Fireball whisky shot–taking, bar crowd to enjoy it. Joining Nashville's line-up of must-see sights like the Grand Ole Opry and the Country Music Hall of Fame are the Johnny Cash Museum and the refurbished Musicians Hall of Fame, both expected to open in 2013.
Where to Shop
While you won't see every Nashvillian sporting a pair of cowboy boots (some claim wearing the accessory will call you out as a tourist), if you want to feel a little more country this is a great place to pick up a pair. Try Boot Country, where you can buy three pairs of boots for the price of one. For Western wear that's not only designed for your feet, check out Nashville Cowboy, which stocks an assortment of clothing, hats, and boots. Nearby, Honey Girl has an adorable selection of handmade accessories, from fascinators to guitar pick earrings—the perfect souvenir from Music City.
Where to Eat
Food is a big deal in Nashville. Drawing on Tennessee flavors, chefs offer fun and increasingly farm-fresh takes on southern dishes, while restaurants run the gamut, with options for starving musicians, top record producers, and everyone in between.
Start the day with a hearty regional tradition: fried chicken and waffles. You can get a classic take on this at The Southern, an upscale new restaurant that's been praised for its hospitality as well as its cooking. Farther afield, Loveless Cafe is a southern food institution. It's a bit of a drive from downtown, and the wait times can be hefty. When you've tired of southern-style breakfasts try Noshville on Broadway, a popular take on a New York–style deli.
Later in the day or evening, head to Etch, the newest endeavor by prominent local chef Deb Paquette. The menu offers a creative take on modern American dishes and pairs it with a stellar wine and cocktail list. A little farther west, best reached by cab, Tavern is a lively spot that's great for groups. The kitchen serves a range of cuisines, from tacos to falafel, plus there's a "skinny" menu that offers a selection of healthier options.
Not every meal here has to be a sit-down affair. Nashville has joined the food truck craze, serving up everything from BBQ to Filipino dishes. Many bars also have food windows, so you can grab a hotdog or a Frito pie while jamming to the live performances.
Where to Stay
With new hotels like the Omni Nashville Hotel and the Downtown Hyatt Place (set to open in 2013), historic gems like Union Station Hotel in an old train station, and all-suites options like the Hilton Nashville Downtown, there are plenty of lodging options. Another choice is The Printers Alley Lofts, a collection of fully equipped industrial-chic lofts. With full kitchens and plenty of lounge space to hang out with a glass of wine before hitting the town, these lofts are a great alternative to hotel rooms.
Photo Credits: Broadway Carriage, Nashville boots, and Fiddle and Steel courtesy of Jess Moss; Printers Alley Penthouse courtesy of Printers Alley Lofts
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Top off your girlfriend getaway to Nashville with a pole dance or chair dance lesson at Miss Fit Academy. They are a ton of fun and perfect for any size group. Visit http://www.MissFitNashville.com
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Italian sea guardian: Christ of the Abyss turns 60 years old
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OP Senior Member
I am an Indian
Thanks Meter: 156
317 posts
Join Date:Joined: Dec 2013
Today I need you help to root my tab . I Google around for hours and I can't get any root guides or something like that .
Now I realised that my tab is totally unknown for google !
Tab Model : iKon ik-a800
Rom : 4.1.1
Official website of iKon
I want to root my tab ! Please help meee .
Tested apps(not working for me) : z4root ,Framaroot
Tab successfully rooted using vroot app.
Last edited by AlfasMP; 14th June 2014 at 06:20 PM.


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Mortgage Settlement Helps Balance Alabama Budget
Montgomery, AL – A $25 billion national settlement with five big mortgage companies is helping balance Alabama's operating budget during lean times.
The office of Alabama Attorney General Luther Strange received $26 million from the settlement. Of that, $19.3 million will be used from 2013 through 2015 to pay for operations in the attorney general's office and in district attorneys' offices statewide.
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Sad; STO makes me not want to play other mmo:(
View Single Post
Archived Post
Lt. Commander
Join Date: Dec 2007
Posts: 120
# 3
well yes i did get my friend to let me dl it. BUT now the usage of just normal play is extreme... im talking it takes 50mb/hour of gameplay. Something must be wrong there. In comparison LOTRO is 5 mb/hour and one could argue it looks better or the same.
50/hr = not viable and that number is without updates just playing the game that much bandwidth has been used.


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- Iva Davies is one of Australia's most accomplished musicians and composers with a career spanning over 30 years with his band Icehouse, and as a composer for film and theatre. Iva Davies joined ABC Newcastle's Carol Duncan....Monday 10 March 2014
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Slow-smoked meats, including brisket & spare ribs, star on a menu that also features homestyle sides such as baked beans & collard greens
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New Kensington resident looks to transform cityBy Chuck Biedka
Sean Bridgen wants to improve New Kensington one block at a time. Bridgen has lived in the city all of his life, except for time spent ...
Retiring Arnold, Lower Burrell mayors look back with contrasting views
Lower Burrell family opens home to old-fashioned Easter egg hunt
Smaller properties in Alle-Kiski Valley remain attractive to drillers
Leadership Butler County aims to benefit community with pavilion project
Leechburg hosts vigil to halt drugs, violence in the community
Teams set mark for 3-pointers as East boys nip West, 110-109, in Cager ClassicPlaying with intensity down the stretch, the East boys outlasted the West, 110-109, to win the 19th annual Cager Classic on Saturday night at Highlands. More than 1,200 watched as the teams seesawed and let it fly, breaking the Cager …
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Bordonaro boosts East girls to 79-72 victory in Cager ClassicIt took Sydney Bordonaro and her East teammates one half of play to get into gear. But when they did, it resulted in a spectacular second …
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Valley News Dispatch Spotlight Athletes: Plum's Ethan Winesburgh and Deer Lakes' Shae RobsonEthan Winesburgh School: Plum Class: Junior Sport: Baseball Report card: A 6-foot-2 outfielder and pitcher, Winesburgh came back from a season-opening road trip to St. Petersburg, Fla., with a .545 batting average, including two doubles, three triples, six RBIs and …
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Guido: Thumbs down to 6 class proposalNorth Allegheny and North Hills have played each other in a conference football game every year since 1964 when the old West Penn Conference was …
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Perennial boys volleyball powers to face challengesThere's a sentiment going around the WPIAL that if you want to be the best in boys volleyball, then you have to beat the best. …
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Freeport's Pawlak finds home at LoyolaZoe Pawlak looked at a lot of colleges for volleyball, but she kept coming back to Loyola (Md.). It stood out as the school she …
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Cager Classic notebook: Highlands, Mars players bury hatchet for the weekendHighlands and Mars played three times this season in boys basketball. Mars won all three pressure-packed games, by a combined 10 points. The Planets posted 60-55 and 61-60 wins in their Section 1-AAA meetings with the Golden Rams and a …
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Alle-Kiski roundup: Kiski Valley routs North ParkKiski Valley began its divisional rugby schedule in dominant fashion Friday. Tyler Worthing led the way with four tries as the Titans (2-1, 1-0) routed …
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Montgomery's 3s help team to Cager Classic winComing down the stretch in the Cager Classic girls all-star event at Highlands High School on Saturday night, the East team needed a lift to get it across the finish line. The squad got it with the help of Kittanning's …
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Alle-Kiski track and field athletes aim to take next stepElias Graca had success competing in indoor track and field this winter without a lot of strenuous workouts. With the outdoor season ready to begin, …
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Leechburg girls softball team dominates RiverviewMiranda Reesman had a blast in Leechburg's section opener. The senior shortstop hit a three-run homer during a seven-run fifth inning, and the Blue Devils pulled away for a Section 3-A win Friday over Riverview, 16-6, in six innings. The …
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VND high school notebook: High-scoring Plum guard Edwards gaining interestCollege basketball recruiting is picking up for Plum junior James Edwards. Edwards, a 6-foot-2 guard who led the A-K Valley in scoring this season at …
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Soccer career continues for Springdale grad WeimerskirchFrom humble beginnings in Harmar youth leagues to a decorated four-year career at La Roche — after he wasn't sure he'd even play in college — soccer has been good to Bryan Weimerskirch. And the game has taken him places. …
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Tough seasons to end on high note for girls at Cager ClassicSenior Rachel McKaveney enjoyed plenty of success with the Springdale girls soccer team, which never is left out of the WPIAL playoff conversation. But basketball season was a much different story. It was predictable and anticlimactic, and rough around the …
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AmgenAstraZenecaAvastinBiotechnologyMarkets & MarketingMerck & CoNorth AmericaolaparibOncologyPharmaceuticalRochetrebananibvintafolide
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Shoaib Akhtar approached for Nach BaliyePakistani cricketer Shoaib Akhtar has been approached to be a part of the dance show Nach Baliye 7. Shoaib got married to 20-year-old Rubab last year in a quite ceremony. Sources say that currently talks are on with the cricketer. "Though Shoaib is willing to ... DNA, 1 day ago
Unacceptable tweet of Shoaib Akhtar - Bangladesh Daily Star, 1 week ago
Ranbir Kapoor with the bat, faces Shoaib Akhtar - Deccan Chronicle, 1 week ago
514 images for shoaib
Why Team India is still an overachiever
India has never had a tearaway fast bowler like Brett Lee or Shoaib Akhtar or a fast bowling attack even remotely as threatening as the West Indian one of yore. Till some years back we were one of the worst fielding sides in the world. We never had the ...Sify, 2 days ago Shoaib Mohammad: Pakistan need not fear Australia with Cricket World Cup glory so near Yahoo! Maktoob News, 1 week ago Watch: Mauka remix features Shoaib Akhtar Deccan Chronicle, 2 weeks ago Hilarious! Mauka Mauka dubstep of Shoaib Akhtar is the coolest thing you will see today Daily Bhaskar, 2 weeks ago
Vishwa Vijeta l Shoaib Akhtar talks about winning ...
ABP News BIG Debate ll Is there any conspiracy hat... Shoe hurled at Renuka Chowdhury's supporters' pres... If there is scarcity of water in near future,VIP z... Another letter bomb rocks AAP, leader alleges cons... WC 2015: I understand my ...ABP Live, 1 week ago Terrorist attack in Jammu || Two attacks in two da... ABP Live, 1 week ago Vishwa Vijeta: Shoaib Akhtar, Ashish Nehra and Gau... ABP Live, 1 week ago Shoaib Akhtar talks about India's win over Banglad... ABP Live, 1 week ago
Shoaib Shaikh wins it for Mumbai in Mustaq Ali Trophy
The Mumbai side that looked off colour during the Ranji Trophy this year, looked in their elements as they defeated Gujarat by 92 runs in the Inter-zonal T20 tournament at MCA stadium.Times of India, 1 week ago
Misbah lashes out at Shoaib Akhtar
Misbah-ul Haq on his return to Islamabad on Wednesday. Picture: AFP Islamabad: After returning home from the World Cup, Pakistan captain Misbah-ul Haq lashed out at former cricketer Shoaib Akhtar and a few others for constantly criticizing ...ABP Live, 1 week ago Pakistan test skipper Misbah has no plans to return to ODIs India TV, 1 week ago Misbah has no interest to return to ODIs Daily Times, 1 week ago Misbah confirms ODI retirement News24, 1 week ago
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Sania Mirza's first crush revealed
News 24 Bureau New Delhi: Sania Mirza was one of the most eligible bachelorette of India until Pakistani Cricketer Shoaib Malik became love of her life and she decided to settle down with him. But do you know who was the first crush of this ace ...News24online, 1 week ago
Shoaib Akhtar does a U-turn
After criticising Misbah-ul Haq severely in the recent past, former Pakistan pacer Shoaib Akhtar on Sunday did a U-turn, saying the captain was the person who was keeping the team alive and he needs support from other batsmen.The Telegraph, 1 month ago Akhtar changes stance, praises Misbah Deccan Herald, 1 month ago Shoaib Akhtar's U-turn on Misbah-ul-Haq, says skipper is keeping team alive Zee News, 1 month ago Akhtra's U-turn on Misbah, says skipper is keeping team alive Business Standard, 1 month ago
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Shoaib Mohammad says Pak need to 'tighten up bolts' to beat Oz in WC quarterfinal
Former Pakistan cricketer Shoaib Mohammad has said that Misbah-ul-Haq's men need to display a much-improved performance against co-hosts and title favourites Australia, if they are to beat them in their World Cup quarterfinal tie on Friday in ...NetIndia123.com, 2 weeks ago
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Pakistan has 'limited talent', says national selector Shoaib Muhammad
Shoaib said that the fact is that most of their players have 'limited talent', adding that the batsmen especially do not have a 'strong base' and are still not aware of the importance of converting their starts into big performances.DNA, 1 month ago Pak national selector claims players have 'limited talent' post loss to India in WC opener Business Standard, 1 month ago
AAP had said things would be 'adjusted' after polls: Congress
Mar 11, 8:10 pm New Delhi, Mar. 11 ( ANI ): Congress leader Shoaib Iqbal on Wednesday said that the Aam Aadmi Party (AAP) had asked for his party's support during the previous Delhi Assembly elections, saying that things would be ...Ani News, 3 weeks ago Delhi polls: Congress gets 2nd spot in four seats; AAP third in one Jagran Post, 1 month ago Congress, Aam Aadmi Party turf war to bite the Muslim vote pie Deccan Herald, 1 month ago
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Find help and support in Islington for parents of children with Down Syndrome. This local special needs listing features details of groups and organisations in your area, and includes essential info such as contact names, numbers and addresses, website links and group meeting times.
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Grand Marnier + Jumbo Shrimp
I bought some jumbo (6-8 per lb.) shrimp and I also have a new bottle of Grand Marnier.
Any ideas for combining these two items for dinner?.
I'm thinking of something with a sauce that could go with rice.
It would not have occurred to me to use those two ingredients together. But, now that I think about it, maybe a Chinese style sweet and sour dish, flavored with Grand Marnier, would be good.
I've had Grand Marnier Shrimp many times, served as an appetizer. The shrimp is lightly battered, and I guess I'd describe the sauce as Jim did, kind of sweet and sour with a strong Grand Marnier flavor. That's the direction I'd head - sounds good!
I make this a lot in the summer, but no reason you couldn;t broil them and serve them now.
Margarita Shrimp
2 lbs shrimp, grilled, shell on, chilled
3 oz frozen orange juice concentrate
2 oz Grand Marnier (or Triple Sec or Cointreau)
1 oz RoseâÂÂs Lime juice
2 oz tequila
Kosher Salt
Lime Slices
Lemon slices
Mix together OJ, Grand Marnier, Lime and Tequila.
Arrange shrimp on a large serving platter. Put a salted Margarita/Martini glass in the middle. Fill it with Margarita mix. Place lemon/lime slices around and serve.
I really like this recipe and have used it with shrimp as well as the beef.
While it doesn't call for Grand Marnier I think it could easily be used in the sauce.
Orange-Glazed Crispy Beef - Ricardo
For the Batter
250 ml (1 cup) unbleached all purpose flour
125 ml (1/2 cup) tapioca starch or cornstarch
15 ml (1 tablespoon) sugar
2 1/2 ml (1/2 teaspoon) salt
180 ml (3/4 cup) lager or pale ale
125 ml (1/2 cup) water
454 g (1 lb) cold leftover roast beef cut into strips
60 ml (1/4 cup) tapioca starch or cornstarch
Oil For Frying
For the Sauce
60 ml (1/4 cup) soy sauce
10 ml (2 teaspoons) tapioca starch
125 ml (1/2 cup) sugar
30 ml (2 tablespoons) rice vinegar
3 cloves garlic minced
Grated zest of 2 oranges
15 ml (1 tablespoon) chopped fresh ginger
1 ml (1/4 teaspoon) hot pepper flakes or cayenne
Juice of 2 oranges
For the Batter
1. Heat the oil, setting the deep fryer to high. Preheat the oven to
100C (200F). Line a baking sheet with paper towels.
2. In a bowl, combine all the dry ingredients. Add the liquid ingredients, whisking until the batter is smooth. Set aside.
3. In another bowl, combine the beef and the starch.
4. Divide the beef slices into 5 equal portions. Coat 1 portion with
batter. Drop the battered strips 1 by 1 into fryer to prevent them from
sticking together. Fry for 2 to 3 minutes. Drain, transfer to the baking
sheet and keep warm in the oven. Repeat for the remaining portions.
For the Sauce
1. In a bowl, combine the soy sauce and the starch. Set aside.
2. In a large skillet or wok, bring the sugar, vinegar, garlic,
orange zest, ginger and hot pepper flakes to a boil. Simmer until the
sugar begins turning gold. Add the orange juice and simmer for 1 minute.
3. Add the soy sauce mixture, whisking constantly. Bring to a boil.
Off the heat, add the cooked beef strips and turn it gently with a
spatula until well coated.
4. Serve immediately.


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Create the next postcard or flyer for Foodstation
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Another pup seperating question
How much of an angle do you need to get a chunk of the mother corm and just how much of the mother corm do you need?
I have been experimenting on various naners in the yard, and in my opinion I still don't seem to be getting much of a chunk of the mother. I've potted them all anyway, but I really wonder if any will take.
In this picture, you can see the pups are very close to the mother and to each other. Does that make it easier or harder to seperate?
Check out this thread, "Time to separate the pups for the Spring":
It shows step by step the separating of a pup from the mother plant.
The pups being that close makes it easy, you have the mother plant to use as the fulcrum when you're wedging/prying the pup off.
Here is a link that might be useful: Time to separate the pups for the Spring
You don't really need a piece of the parent corm - but you need to get the whole corm of the pup. Each variety is different. Some, if you cut straight down, that is fine. Some you need to angle under the parent corm a little bit.
You will have to experiment a little. Start by taking one that is 12-16" tall. If it has good root development, then that was a good size. If not, pot it up and it will look terrible for a while but will almost surely survive and grow. If there weren't many roots, wait till the next one is a little taller, say 2' and try again. I have had pups that were 3 inches tall that had so many roots that they barely fit in a 15 gallon pot. I have had 3-4 feet tall pups that would fit in a one gallon pot, because there still wasn't any root development. Experiment and get to know your variety.
Also, the first pups from a Tissue Cultured plant tend to have little or no root development till they are more than 3' tall, but the second generation is more normal.


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Died: March 18, 2015
Ann B. Gresh (Bicsko) of Milltown, NJ passed away on Wednesday, March 18, 2015 surrounded by her loving family. Ann was born and raised in View full obituary
Born: August 04, 1942
Died: March 16, 2015
George Sorian Lewycky passed away on March 16th at his home in Milltown New Jersey. He was 72 years old. George battled with medical challenges View full obituary
Born: January 13, 1958
Died: March 15, 2015
Tammy A. Giacolona passed away on March 15, 2015 at the age of 57. Born the youngest child to Joseph and Dolores Balint, she was View full obituary
Died: February 28, 2015
Caroline K. Tschoepe (Nee: Leyk) of East Brunswick, NJ passed away at her home on February 28, 2015. She was 77 years old. View full obituary


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Energy Star Rated - No
This counter-depth French door refrigerator provides distinct styling and allows
more workable space in the kitchen. Its exceptional features include an innovative
through-the-door ice & water dispenser which provides quick and easy access
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Most Liked Positive Review
There is no room for criticism. It is a quality product that matches its high price.
I highly recommend this refrigerator to anyone that is looking for a quality product. Kitchenaid delivers on its advertising. I have the Maytag version of this Model in my summer condo and it is...Read complete review
I highly recommend this refrigerator to anyone that is looking for a quality product. Kitchenaid delivers on its advertising. I have the Maytag version of this Model in my summer condo and it is my opinion that the Kitchenaid is a slightly higher quality. I am a Mechanical engineer that is super critical. This refrigerator has every convenience you could desire. I love the open door alarm. As a 73 year old senior citizen I find I use this feature more than is expected.
Most Liked Negative Review
Nice Look
This is a very nice looking refrigerator and I like the interior design and drawers. The freezer is well designed too. I feel for the price we paid, the drawers could be better...Read complete review
This is a very nice looking refrigerator and I like the interior design and drawers. The freezer is well designed too. I feel for the price we paid, the drawers could be better quality. They seem very flimsy and don't have very good support. I worry they will break. I like the lined shelves in the door. What I don't understand is that if our place gets above 74 degrees, the door seal sweats. I don't know if that is indicative of a poorly sealing unit or what. The ice maker is good but the dispenser is too forceful and ice goes all over the place when trying to fill up a glass. I also wish it had a crushed ice option. [...] Overall we are happy but it's the little things that seem to be overlooked.
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Working well !
By klinkbc2
from La Quinta, CA, United States
Comments about KitchenAid 19.7 CuFt Counter Depth Stainless Bottom Freezer Refrigerator:
I have had this refrigerator for several weeks now and it does all of the things you would expect a refrigerator to do . Plenty of cold water and an adequate amount of ice .
Bottom Line Yes, I would recommend this to a friend
Was this review helpful? Yes / No
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Comment on this review
Keeps things fresher
By Florida gal
from Flagler Beach, FL, United States
I don't know how it does it, but food just seems to stay fresher longer (think strawberries, salad). I assume it's the humidity control in the crisper drawers, but it might just be magic. Love the counter-depth for all the extra space it makes in the kitchen, and the four-bin bottom freezer holds everything we ask of it.
Our New Refrigerator
By Charlie1709
from Sun City Hilton Head
The refrigerator is capable of holding all of the regular and frozen foods that we need. It is conveniently arranged and it's easy to locate what we're looking for. The only problem is the ice dispenser throws ice on the floor each time I use it.
great looking
By greg218
from Baltimore, MD, United States
first Kitchenaid refrig,had Jenn-air before,,like the French door set-up,,,steel does not seem to tarnish like the Jenn-air did,,ice maker takes some practice controlling ice from flowing over,,,over all,,love it so far!
Love the French Door and lower freezer. Keeps things cold. Runs quite. Lots of shelf storage in
By Carol Bryan
from Shelby charter Township, MI, United States
I bought my new refrigerator and it was delivered on March 3. It is my first Kitchen Aid appliance. I love the French doors and extra door storage shelves. Runs quietly, keeps food cold enough. So far I'm completely satisfied with my choice. If other appliances need to be replaced, I will definitely look at Kitchen Aid.
I like the freezer on the bottom, the chilled water and all its features.
By peach
from San Bernardino, CA, United States
I've had it for about a month and the counter depth unit is a perfect fit. I could not be more pleased with my new Kitchenaid 20 Cu. ft. counter - depth French door refrigerator
Perfect for us
By alk722ppc
from Palatine, IL, United States
Though the interior of the fridge is on the small side, this is a wonderful appliance. Water/ice dispenser have been great, and the freezer actually fits much more than I anticipated. I wanted a counter-depth refrigerator and I couldn't be happier with this KitchenAid!
your kidding right
By Phaque
from Harrisburg, PA, United States
people who write survey questions without any regard for customers time should be fired
Counter depth refrigerator
By Wood
from Hawaii County, HI, United States
We've had our new Counter depth French door refrigerator w/through the door ice and water for about a week. We are delighted with it in virtually all respects... although it has taken about a week to learn the idiosyncrasies of the ice dispenser. At first it was hard to avoid ice cubes and chips everywhere... after a bit we learned that to press the container up high and a bit to the right solved the issues. All good!
Still waiting to see what happens
By dk01
from ma
Seems ok but told the bottom freezers are all bad. We will see
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