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The Plimoth
This new American restaurant draws from classic Italian and French cuisines, but abandons pretentiousness. An emphasis on local farmers and ingredients results in an ever-changing menu of seasonal dishes.
This new American restaurant draws from classic Italian and French cuisines, but abandons pretentiousness. An emphasis on local farmers and ingredients results in an ever-changing menu of seasonal dishes.
International flavor and locally sourced ingredients. This gathering place offers thoughtfully procured cuisine in a family-friendly setting. Try the duck ravioli, served with Colorado corn, parmesan brodo, mushrooms, and arugula.
Relaxed American dining in Uptown. The varied menu offers re-interpreted American classics and an impressive fresh oyster selection. If you're not opting for the sustainable seafood, try the burger.
This is a gastropub for the masses. This 290-seat dining room offers an innovative "East-meets-West" vibe. The menu is decorated with fresh, light, and farm-intensive dishes.
Globally inspired cuisine for an international airport. Dine there morning, noon, or night; but if it's breakfast you're after—elect for the fried egg BLT. It's made with local Tender Belly bacon and served with home fries. Pair it with the blood orange mimosa.
Executive chef Thomas d' Aquin prepares transcendent cuisine with flavors recalling those of Southern France, Italy, Spain, Greece, and Morocco. The international tastes should be no surprise: "volta" is a Latin term meaning a trip or excursion. We like to reserve a table outside on the terrazza to peruse the carefully procured wine selection.
Dining at DIA? Forget compromise—upscale steakhouse fare awaits. Order from the same menu you'd find at Elway's other locations. Early bird travelers can reap the benefits of a take-out breakfast menu with dishes like beef hash, chicken-fried steak burrito, omelets and even housemade granola.
The menu offers diverse selections like Southern-style fried chicken with honey-chili glaze and a soba noodle bowl. Eats are paired with brewer Ian Clark's unfiltered, hoppy creations.
Scratch-made Italian fare with Neapolitan pizzas. Try the meatball and the stuffed shells. Also try the original Greenwood Village location.
An upscale-casual pizza place known for their Chicago-style pies. Thin crust pizzas are also available.


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Get An Early Taste of The Roast of Justin Bieber In The Brand New Red Carpet Pre-Show
Watch the red carpet pre-show online.
OMG Rihanna Just Dropped Her New Single: Hear It Now!
Our new fave song
Ed Sheeran Surprises A Couple At Their Wedding And Remains Coolest
Prepare to cry
Zayn Malik Has Officially Left One Direction
February 27th, 2013
Did you hear that David Bowie is back? Yeah, old news right? Well, on tonight's episode of The Wedge, you get to see just how a day in the life of Damian Abraham unfolds. And how sometimes he misses big news stories just by being such a big-shot, no-good TV host.
We also play new videos by Alt-J, Crystal Castles, and you guessed it, Mr. David Bowie.
The Wedge airs every Wednesday at 11:30 PM EST. Follow us on Twitter at @MUCHTheWedge.
Tags: Blog, Damian Abraham, David Bowie, The Wedge
Posted on Wednesday, February 27th, 2013 at 4:29 pm by Cam and is filed under Blog, The Wedge.Tweet

subset: commoncrawl


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|Page (1) of 1 - 12/05/12
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Nashville, TN, December 05, 2012 --(PR.com)-- Critics on both sides of the Atlantic continue to heap praise on It's About Time, the brand new release from Bobby Brooks Wilson. From the UK, Juke Blues Magazine reviewer Ray Ellis says, "Bobby Brooks Wilson's vocal similarity to that of his father Jackie Wilson is quite remarkable: his passion and fortitude on this finely tuned set of well-known songs and original material is only matched by his fascinating story as revealed by Motown PR guru Al Abrams."
Sharon Davis of SoulMusic.com says, "Am listening to the CD now and my first impression is one of OMG! Bobby has a rich commanding voice and I love the full support vocals. It's sophisticated and spine tingling in places, particularly when he covers Jackie's originals. Although having said that I particularly love 'I Can't Love You Anymore.'"
Copyright 2010 PR.com
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Keywords:Arts & Entertainment,Events & Concerts,Music,Performing Arts,Radio,Television,Web Sites & Internet,Diversity & Society,LifestyleArts & Entertainment,Electronic Games,Business,e-Commerce,Surveys,Polls & Research,Communications,Social Media,Lifestyle,Technology,Games & Entertainment,Internet,Travel & Hospitality,Casinos & GamingArts & Entertainment,Music,Radio,Diversity & Society,African American,Lifestyle,Retail
Related Sites: Hollywood Industry , Digital Game Developer
Related Newsletter: Levels Newsletter , DMNForums , Tutorial Finder , Review Seeker


text:
Real news. Real funny.
Real news. Real funny.
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Raikkonen cryptic over his future
Lotus driver vague over his plans for 2013 amid rumoured interest from McLaren
Last Updated: 21/09/12 6:35pm
Kimi Raikkonen: Refused to be drawn on his future on Thursday
Kimi Raikkonen has given a cryptic response to questions over his future in Formula 1, saying "you never know" what 2013 and beyond might hold for him.
Sky Sports F1 is THE only place to watch the 2012 F1 season in full live. Our coverage continues with the Singapore GP:
FRIDAY 21st - P1 from 10.45am. P2 from 14.15pm
SATURDAY 22nd - P3 from 10.45am. Q from 13.00pm
SUNDAY 23rd - Race .
The 2007 World Champion has enjoyed a successful return to the top level of motorsport since ending his two-year stint in rallying to join Lotus at the start of the season. Although a comeback victory has eluded Raikkonen so far, the Finn remains an outside bet for the title.
Raikkonen's impressive form has prompted speculation that his former team McLaren could even make a move from him should Lewis Hamilton switch to Mercedes - a possibility endorsed by Sky Sports F1's Ted Kravitz in Singapore on Thursday.
Should a shock return to Woking not materialise, then a second season at Lotus has been considered a near formality. However, speaking during Thursday's drivers' press conference, Raikkonen refused confirm that he intends to remain in F1 for at least another season.
Asked if he fancied another year in the sport, the Finn laughed slightly before repling: "You never know. There are a lot of other nice things to do than Formula 1.
"But right now we have options and we'll see what happens."
After being eased out of Ferrari to make way for Fernando Alonso at the end of 2009, Raikkonen, despite talks with McLaren, opted to quit F1 to persue his interest in the World Rally Championship - a two-year sojourn that ultimately yielded few highlights.
Speaking on Thursday, Raikkonen reiterated that life as an F1 driver wasn't the be-all and end-all for him, and although currently enjoying life at Lotus, he was always conscious of the fact that there are other things to do outside the sport.
"I always said I'm not desperate for Formula 1," he said. "When I feel like doing something else I will. Right now I enjoy [it], have a good team, nice people to work with. We will see what happens.
"There is a lot of different racing and doing normal things in your life outside of Formula 1. So I will wait and see."


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Abilene Christian University Literary Journals
What's Inside this Collection.
This collection contains editions of The Pickwicker and The Shinnery Review, student-led literary magazines that include original short stories, essays, poems, artwork, and other creative works. The Pickwicker was published at Abilene Christian University between 1930 and 1990 and The Shinnery Review has been published since 1995.


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An ultra-high density optical storage system includes an array of nanometer-scale emitter tips which are associated with corresponding storage surfaces. The tips are optically selectively activated to produce data features simultaneously on their corresponding storage surfaces, with the resulting data features having diameters approximately the same as the diameters of the emitter tips. The array is scannable to selected locations, whereby a data set can be stored in parallel at each location. Because of the small size of the data features, the locations of adjacent features can be spaced apart by a distance on the order of 10 nm for ultradense storage.
Stored data can be selectively read out optically by positioning the emitter tip array at the location of the data set to be read and directing light onto the storage surfaces for each tip. Light reflected from the surfaces will correspond to the presence or absence of a data feature at each tip for parallel readout. Alternatively, each storage surface may be a part of a corresponding light emitter activated by the presence or absence of a feature.
1. Data storage and readout apparatus, comprising:
a photoconductive storage medium having a storage surface including a plurality of memory regions;
an array of nanometer scale emitter tips, each tip corresponding to each memory region and movably mounted closely adjacent its corresponding memory region, each said tip being responsive to photoconduction in said storage medium to produce on a memory region of said storage surface at a location in alignment with a corresponding tip;
a data feature corresponding to data to be stored; and
means responsive to said data feature to read data stored on said memory region of said storage surface.
2. The apparatus of claim 1, wherein said storage medium is a semiconductor which is photoconductive in response to the presence of light to produce a corresponding current between each said tip and its corresponding memory region on said storage surface to thereby produce said data feature.
3. The apparatus of claim 1, wherein each said emitter tip is mounted on an actuator for motion with respect to its corresponding memory region, each said tip being tapered and having a minimum diameter on the order of a few nanometers.
4. The apparatus of claim 1, wherein each said data feature comprises the presence or absence of an electrically conductive dot formed on said storage surface.
5. The apparatus of claim 3 wherein said storage medium is a semiconductor which is photoconductive in the presence of light to cause said tips to produce corresponding data features on said storage surface which correspond to the intensity of the light.
6. The apparatus of claim 5, wherein said actuator is movable in a plane parallel with said storage medium to position said tip at a selected one of a multiplicity of locations with respect to said storage medium for production of a data feature at the selected location in response to a corresponding presence or absence of light.
7. The apparatus of claim 6, wherein said storage surface is a conductive layer on said semiconductor.
8. The apparatus of claim 5, wherein each said memory region comprises a thyristor, and wherein said means responsive to said data feature to read data stored on said storage surface comprises a read voltage applied between each said memory region and its corresponding tip to cause the thyristor to emit light in accordance with the presence or absence of a data feature at the location of the corresponding tip to produce a read data beam of light.
9. High density parallel data storage and readout apparatus, comprising:
a storage medium having a multiplicity of storage regions;
an electrically conductive data storage surface for each said storage region;
an actuator controllably movable with respect to said data storage surfaces;
an array of emitter tips on said actuator, each tip having a diameter of a few nanometers and corresponding to one of said data storage surfaces, each said tip being movable by said actuator to alignment with a selected one of a multiplicity of data storage locations on its corresponding data storage surface; and
means for actuating selected tips to produce readable data features on said data storage surfaces.
10. The apparatus of claim 9, further including a readout light beam incident on said storage medium for simultaneously activating tips aligned with readable data features to produce an output light beam corresponding to said data features.
11. The apparatus of claim 9, wherein said storage medium comprises a multiplicity of light-producing semiconductor devices activatable in accordance with the locations of said features to produce a corresponding readout beam.
12. The apparatus of claim 9, wherein said means for actuating selected tips includes an optical data image impinging on at least a portion of said multiplicity of storage regions to produce electrical current between selected storage regions and corresponding tips to produce data features corresponding to the optical data image impinging thereon.
13. The apparatus of claim 12, wherein each said tip is movable by said actuator for selective alignment with one of said multiplicity of data storage locations on its corresponding storage surface.
14. The apparatus of claim 13, wherein all said tips in said array are movable by said actuator simultaneously for alignment with corresponding data storage locations in said respective storage regions.
15. The apparatus of claim 14, wherein said actuator is movable to align each of said tips with a first corresponding data storage location on its respective storage surface for producing a first set of readable data features representing a first optical data image, and is further movable to align each of said tips with a second corresponding data storage located on its respective storage surface for producing a second set of readable data features representing a second optical data image.
16. The apparatus of claim 14, wherein said actuator is movable to align each of said tips with any one of a multiplicity of corresponding data storage locations on said respective storage surfaces, whereby a multiplicity of data features are storable on each surface.
17. The apparatus of claim 9, wherein said actuator is movable to align each of said emitter tips with a predetermined one of a multiplicity of corresponding data storage locations on its corresponding data storage surface, whereby said readable data features are producible at predetermined locations on each said data storage surface.
18. The apparatus of claim 17, wherein said actuator is movable to selectively align each tip with each of said multiplicity of data storage locations on its corresponding data storage surface, the data features at corresponding data storage locations in all of said data storage surfaces representing a data image, whereby said storage surfaces are capable of storing a multiplicity of data images.
19. The apparatus of claim 18, further including an optical readout responsive to said data features at selected data storage locations to optically reproduce the data images represented by the data features at said selected location.
20. The apparatus of claim 9, wherein said means for actuating selected tips includes:
an optical image on said multiplicity of data storage regions; and
means applying a voltage between said array of tips and said storage medium whereby said image activates selected tips to produce readable data features representing said image on said data storage surfaces.
21. The apparatus of claim 20, further including means responsive to said data features for reproducing said image including a readout beam incident on said storage medium.
22. The apparatus of claim 9, wherein said storage medium is a semiconductor, and wherein each said storage region is a photoconductive diode.
23. The apparatus of claim 22, wherein said data storage surface on each data storage region comprises a layer susceptible to modification by an electric field for production of plural readable data features.
24. The apparatus of claim 23, wherein said data storage surface is a thin layer of gold.
25. The apparatus of claim 9, wherein each tip of said array of emitter tips comprises a microelectromechanical cathode.
26. The apparatus of claim 25, wherein said tips of said array of tips are spaced about 10 μm apart.
27. The apparatus of claim 25, wherein said actuator comprises a microelectromechanical multistage support assembly having a central stage supporting said array of emitter tips.
28. The apparatus of claim 27, wherein said storage surfaces lie in a first plane and wherein said support assembly supports said array of emitter tips for motion in a second plane parallel to said first plane.
29. The apparatus of claim 27, wherein each said storage region is a p-i-n photodiode.
30. The apparatus of claim 27, wherein each said storage region is a thyristor.
31. The apparatus of claim 27, wherein each said data storage surface comprises a layer of material susceptible to modification by an electric field for production of said readable data features.
32. The apparatus of claim 31, further including means for applying a voltage between said array of tips and said storage medium, whereby an optical image applied to said storage medium activates selected tips to produce readable data features on said storage surfaces representing the optical image.
33. The apparatus of claim 32, further including means responsive to data features on said storage surfaces for reproducing the optical image represented by such data feature.
34. A data storage system combining mechanically scanned nanometer-scale tips with optical imaging to produce high resolution, high density optical data storage, comprising:
a photoconductive storage medium having a top and a bottom surface;
a movable platform closely adjacent said top surface;
an array of emitter tips mounted on said platform, said tips being of nanometer scale and being closely adjacent said top surface;
an optical image having a light intensity pattern directed onto said bottom surface to produce simultaneous voltage pulses between said top surface and adjacent tips, said voltage pulses at said tip having amplitudes corresponding to light intensity at corresponding adjacent top surface locations to activate tips in the array in accordance with said light intensity pattern to thereby provide simultaneous parallel outputs from the activated tips and
means on said top surface responsive to said parallel outputs for producing markers representing an image data frame for data storage.
35. The system of claim 34, further including means for moving said array to scan said image to thereby obtain a multiplicity of image frames.
36. The system of claim 34, further including means for moving said array to record additional images.
37. The system of claim 34 wherein said storage medium is a p-i-n photodiode, and wherein said means on said top surface is a thin layer of electrically conductive material having surface properties which are changed by the application of said voltage to produce data feature marker adjacent each activated tip, the presence or absence of a data feature representing a stored data state.
38. The system of claim 37, further including a read beam directed toward said bottom surface, said read beam being reflected from said storage medium in accordance with different absorption coefficients dependent on, and corresponding to, the presence or absence of, and to the location of, stored data features to produce a nondestructive optical parallel readout of stored optical data.
39. The system of claim 34, wherein said storage medium is a pnpn phototransistor for increasing contrast in said light intensity pattern.
40. The system of claim 39, wherein said means on said top layer comprises a layer of electrically conductive material, said material having surface properties which are changed by the application of said voltage to produce a data feature marker adjacent each activated tip, the presence or absence of a data feature representing a recorded data state.
41. The system of claim 40, further including a voltage between said top surface and said emitter tips to cause a current to flow between said storage medium and any tips aligned with a data feature, said current flow turning on said pnpn phototransistor in the presence of a data feature to cause the phototransitor to emit light in a pattern corresponding to said data features.
42. A method for parallel storage of optical data, comprising:
directing optical data including a special pattern of illuminated and dark areas to be stored onto a storage medium incorporating a multiplicity of photoconductive storage regions, wherein each storage region includes an electrically conductive storage surface susceptible to modification to produce a structural data feature;
aligning a movable microelectromechanical tip having a minimum diameter of a few nanometers with a selected data storage location on the storage surface of each storage region; and
applying an electric field between each said tip and its corresponding storage surface to produce at the selected data storage location on each said storage surface a data feature having a diameter corresponding to that of said tip and representing that area of the optical pattern which is incident on the corresponding storage region, whereby a single data feature at the selected storage location on each of said multiplicity of storage region surfaces stores said optical data.
43. The method of claim 42, further including:
shifting each said tip for alignment with a second selected data storage location on its corresponding storage region;
directing a second optical data pattern to be stored onto said storage medium; and
applying said electric field between each said tip and its corresponding storage surface to produce a second data feature on each said corresponding storage region, whereby a single data feature at the second data storage on each of said multiplicity of storage region surfaces stores said second optical data pattern.
44. The method of claim 43, further including:
shifting each said tip for sequential alignment with multiple data storage locations on corresponding storage regions;
sequentially directing multiple optical data patterns onto said storage medium; and
applying said electric field to produce multiple data features on each corresponding storage region for sequentially storing said multiple optical data patterns.
45. The method of claim 44, further including:
aligning said tips with a selected data storage location on each of said storage region surfaces; and
applying a read voltage between said tips and said storage region surfaces to cause said storage medium to emit a pattern of light corresponding to the data features stored in the selected data storage locations to thereby read said stored optical data.
46. The method of claim 44, further including:
aligning said tips with a selected data storage location on each of said storage region surfaces;
applying a read voltage between said tips an said storage region surfaces; and
directing a read beam of light onto said storage medium to produce a reflected pattern of light corresponding to the data features stored in the selected data storage locations.
47. The method of claim 42, wherein aligning said tips includes positioning each tip sufficiently close to its corresponding storage surface to permit tunnelling currents between each tip and its storage surface, and wherein applying an electric field to a storage surface receiving light from an illuminated area of said optical data pattern produces a data feature in the form of a marker at the selected location on said storage surface and applying an electric field between a tip and a storage surface which is receiving light from a dark area of said optical data pattern produces a data feature in the form of an absence of a marker at the selected location on said storage surface.
48. The method of claim 41 wherein directing an optical data pattern onto a storage medium includes directing an optical input beam containing optical write pulses onto said storage medium, said optical pulses each having a diameter larger than the diameters of said tips, the presence or absence of optical write pulses providing said special pattern.
49. The method of claim 41, further including scanning said tips over multiple storage locations on corresponding storage regions and applying an electric field and a special pattern of optical data for each storage location for storing multiple frames of optical data on said storage medium.
The present invention relates, in general, to high density data storage and retrieval systems and more particularly to systems capable of storing immense quantities of digital data in a short period of time and in a small space and for effectively retrieving such data.
A great deal of research has gone into the development of systems for the effective and efficient storage of large quantities of data, and to systems for retrieving that data rapidly and effectively. Humans relate to images, and it is particularly in the storage and retrieval of digital representations of various images that major problems occur. For example, the storage of digital data representing a single television image may require 0.5 million bits of data, or more. Recording a typical television program, wherein the television transmission provides 30 frames or images per second requires storage of digital representations of 100,000 frames per hour, so the storage of one hour's worth of television transmission would require storage of 50 billion bits of data. Conventional optical disc storage systems can only store a few frames, so the digital storage of television or related information has been impractical.
Another problem in the storage of digital representations of images and other high density digital data is the difficulty of retrieving such data, for the sheer volume of the data makes recovery extremely difficult. Parallel storage and recovery increases speed, but places stringent requirements on the recording medium, as well as on the equipment for producing the data to be stored or retrieved. Thus, there is a real and growing need for an extremely high volume digital data storage and retrieval system which not only records large quantities of data on a two-dimensional storage medium, but which provides high resolution image recording and storage. In addition, there is a need for a system for rapidly and nondestructively recovering such stored data and for a system which permits selective erasure of stored data.
Briefly, the present invention is directed to a data storage system which combines mechanically scanned nanometer-scale emitter tips with optical imaging procedures to produce high resolution, high density image storage and image retrieval. An array of emitter tips is mounted on a movable platform, with the tips being above and closely adjacent to a top surface of a storage medium such as a photoconductor. When an optical image or other optical pattern to be stored is directed onto a bottom surface of the storage medium, the conductivity of the photoconductor is changed wherever light strikes the medium, producing a corresponding voltage pulse between the top surface of the storage medium and an adjacent tip, the voltage amplitude corresponding to light intensity. Each tip in the array simultaneously receives a voltage pulse corresponding to the image intensity at its particular location, thereby providing parallel outputs from the activated tips in the array. These outputs represent one frame of the impinging image and can then be recorded for data storage.
The array of tips may be moved to scan the image, in one embodiment, to obtain a multiplicity of image frames and since the tips have diameters in the range of a few nanometers, such scanning can produce extremely high resolution parallel storage of an optical image. The tips and the array may be spaced apart by about 10 nm, but since the tips will detect data only at the tip location, incremental scanning and repetitive storage of data produces the high resolution storage.
In a preferred form of the invention, the storage medium may be a p-i-n multiple quantum well photodiode, with the top surface of the photodiode being covered by a thin layer of an electrically conductive material having surface properties susceptible to an electric field; for example, a thin layer of gold. An optical image directed onto the bottom surface of the storage medium changes the voltage/current characteristic of the diode and produces at each of the tips in the array a voltage pulse corresponding to the intensity of the light impinging on the bottom surface in the region of the tip. Voltage pulses above a predetermined threshold will create a field which produces a "feature" for example, a depression or a small dot; such as a lump of gold, at the location of the tip, each feature will have a dimension comparable to the dimension of its corresponding tip; i.e., a few nanometers in diameter. The presence or absence of a feature corresponds to a "1" or a "0" data state so that the image is stored as an array of 1s and 0s on the storage medium.
The data stored in the form of ones and zeros can be optically read by directing a light beam toward the bottom of the storage medium. Light will be reflected in accordance with different absorption coefficients in the medium which are dependent on, and correspond to, the presence or absence of, and to the location of, the stored features. This enables nondestructive optical parallel readout of the data.
The small size of the tips allows high density storage of data, for the tips may be a few nanometers in diameter, and spaced about 10 μm apart. The spacing between the tips provides 1,000 tips per centimeter or one million tips per square centimeter, so that upon optical activation of the storage medium up to one million features will be produced simultaneously to thereby record a single frame of data. The array of tips is mounted on a platform which is movable in the x and y direction with respect to the top surface of the storage medium in, for example, 10 nm increments. This allows each tip to record features on the storage medium at 10 nm intervals, as the array is moved. With the tips being spaced apart by 10 micrometers, each tip can cover an area 10 micrometers on the side during scanning in the x and y directions. Since the features can be produced at 10 nm increments, each tip can produce one million features in an area 10 micrometers square, with a result that a one square centimeter array of tips can record one million frames, or 1012 bits of data; that is, a terabit of data. The storage medium can be read optically in the manner described above to provide parallel readouts of each frame of data.
An alternative to the foregoing optical storage and readout is an optoelectronic system wherein the storage medium utilizes a pnpn semiconductor which acts as a phototransistor to increase the contrast ratio between "1" and "0" points in an image to be recorded, and thereby eliminates the need for a laser light source for the image to be recorded. The presence of a light pulse, which is to be recorded, on the bottom layer of the phototransistor produces a corresponding current determined by the intensity of the light and the gain of the transistor. This current develops a voltage between the phototransistor surface, which may be coated, for example with gold, and the adjacent emitter tip. The resulting field between the tip and the surface of the storage medium produces a "feature" in the gold layer wherever a voltage is present. Where no light impinges on the phototransistor, there is no current so the transistor remains off and no feature is produced. The optical image impinging on the bottom of the phototransistor storage medium produces a corresponding pattern of "features" on the top surface, as discussed above for parallel recording of the data one frame at a time.
The data stored optoelectronically, in the manner described above, may be read by supplying a voltage to the top (P layer) surface of the pnpn phototransistor and by supplying a bias voltage to the tips. The bias voltage on each tip causes a current flow between the storage medium and any tips aligned with a "feature". No current, or a lower current, flows for tips not so aligned. This tip current flow reduces the turn-on voltage required for the phototransistor, which functions as a thyristor in the read mode, so the presence of a "feature" switches it on, causing it to emit light. This light is emitted through the bottom of the storage medium in an intensity pattern corresponding to the features stored at the locations of the tips in the array. The array may then be shifted and again activated to produce a second output pattern corresponding to the adjacent "feature" pattern frame, and so on for parallel readout of all of the stored data frames.
In a still further embodiment of the invention, the conductive coating on the surface of the storage medium is replaced by a conductive coating on the surface of the tip. In this case, the writing of data for storage is produced by a voltage between the tip and the pnpn storage medium which results from a photocurrent in the storage medium responsive to impinging light. The voltage ejects a small amount of metal by ion emission from the tip onto the surface of the storage medium, thereby producing on the surface a small metal dot. The small metal dot serves as the "feature" discussed above for storage of data. In the read mode, a forward bias is applied to the tips, as noted above. Each tip adjacent an unwritten area (no dot) produces no current flow, because contact resistance blocks such flow. When the tip is in alignment with a dot, a resultant lower contact resistance causes current flow into the pnpn quantum wells to produce light emission. The high quantum efficiency for semiconductor quantum wells results in a power consumption that is sufficiently small to allow one million bits to be read simultaneously and, since the data storage material itself is the light emitting material, no external light source is required.
A movable tip array suitable for use in the storage system of the present invention is described and illustrated in copending application Ser. No. 08/069,725 of Z. Lisa Zhang and Noel C. MacDonald, filed Jun. 1, 1993, now U.S. Pat. No. 5,536,988, and assigned to the assignee of the present application, the subject matter of which is hereby incorporated herein by reference. As described in that application, a tip array is provided on a central stage of a compound stage microelectromechanical microactuator which is fabricated using a modified single crystal reactive etching and metallization (SCREAM) process such as the process described in U.S. Pat. No. 5,198,390. The central stage is mounted in a frame support assembly including three stages which are interconnected to provide motion along x and y axes. The tip array is made up of a multiplicity of integrated microdynamic emission cathodes which are fabricated utilizing the SCREAM process described in U.S. Pat. No. 5,198,390 and thus preferably are fabricated from single crystal silicon in a process which is compatible with standard silicon processing.
As explained in detail in U.S. Pat. No. 5,536,988, the central stage of the microactuator is mounted so as to provide controlled incremental movement of all of the tips simultaneously. The impinging light from the images to be stored convert each tip into an optically controlled switch, producing "1" bits for storage in areas exposed by the impinging light and producing "0" bits in unexposed areas. After writing one frame of two-dimensional data, the tips are moved by a small increment and a second frame of data may be written.
In accordance with the foregoing, therefore, a combination of nanostructures in the form of tips, of optoelectronics, and of micromechanics capable of moving nanometer tips in incremental steps of 10 nm provide terabit storage with optical data throughput and parallelism to provide the system flexibility which is required to achieve a high performance terabit memory.
The foregoing, and additional objects, features, and advantages of the present invention will become apparent to those of skill in the art from a consideration of the following detailed description of referred embodiments thereof, taken in conjunction with the accompanying drawings, in which:
FIG. 1 is a top plan view of microelectromechanical actuator suitable for use in the present invention;
FIG. 2 is an enlarged view of the actuator of FIG. 1, showing an array of nanometer-scale emitter tips;
FIG. 3 is a diagrammatic illustration of an emitter tip and a corresponding storage medium in accordance with the present invention;
FIG. 4 is a bottom view of an array of emitter tips on an actuator, and illustrating corresponding storage regions for each tip;
FIG. 5 is a diagrammatic cross-sectional view of an optical parallel storage device in accordance with a first embodiment of the invention;
FIG. 6 is a graphical illustration of a load line analysis to determine the voltage swing for pattern writing using the storage device of FIG. 5;
FIG. 7 is a diagrammatic cross-sectional view of an optical parallel readout scheme for the storage device of FIG. 5;
FIG. 8 is a graphical illustration of the absorption spectra for quantum wells under different electric fields as used in the storage device of FIG. 5;
FIG. 9 is a diagrammatic cross-sectional view of an optoelectronic parallel data writing storage device in accordance with a second embodiment of the invention;
FIG. 10 is an equivalent circuit for the device of FIG. 9;
FIG. 11 is a graphical illustration of a load line analysis of the device of FIG. 9;
FIG. 12 is a diagrammatic cross-sectional view of an optoelectronic parallel readout scheme for the device of FIG. 9;
FIG. 13 is an equivalent circuit of the device of FIG. 12;
FIG. 14 is a graphical illustration of the light-voltage characteristics of the device of FIG. 12, at different tunnel currents corresponding to 0 and 1 data features; and
FIG. 15 is a diagrammatic cross-sectional view of a third embodiment of the invention.
The present invention utilizes, in combination with a storage medium to be described, a microelectromechanical actuator 10 which is diagrammatically illustrated in FIG. 1 and which is described in detail in the above-mentioned U.S. Pat. No. 5,536,988. As noted in that application, the actuator is fabricated from, for example, a single crystal silicon substrate 12 as a released, cantilevered structure within a cavity 14 formed in the substrate. The released structure 10 includes a central stage portion 16 connected to a multistage support assembly 18 which holds the central stage above the floor 20 of the cavity for 6-weight motion in x, y, z, roll, pitch, and yard directions. This central stage portion 16 incorporates microelectronic cathode emitters 22 which preferably are fabricated using the SCREAM process at the same time the remainder of the structure is formed but which in the alternative may be fabricated after completion of the stage and support structure. The multistage support assembly 18 provides an interconnect system which connects external signal sources or receivers (not shown) to the emitters 22 as well as to components of the support assembly for use in control or sensing operations. In the disclosed embodiment, the interconnect system uses parts of the support assembly itself as the electrically conductive element, with suitable insulating segments being provided to define specific signal paths through the assembly. These insulating segments provide mechanical connections between various components of the structure to provide structural integrity while providing electrical isolation between adjacent parts to permit complex interconnection schemes.
The central stage portion 16 (FIG. 2) is supported mechanically within a first support frame stage 24 which includes a frame comprising a released beam 26 surrounding the stage 16 and spaced above the floor 20 of the cavity 14 in the substrate 12. The central stage 16 is fixedly secured within this first, innermost beam so that they move together. In a preferred form of the invention, as illustrated, the frame 26 is rectangular, including opposite sides 28, 30, and 32, 34 surrounding the central stage portion 16, and is coplanar therewith.
The support frame stage 24 includes a plurality of interconnect beams 36 to 38 and 40 to 42 extending inwardly from the frame sides 28 and 30, respectively to secure the central stage 16 in place. The beam 26 extends circumferentially around the central stage and provides a rigid support frame to permit precision positioning of the stage. Preferably, beam 26 is formed with a high aspect ratio for stiffness in the vertical direction, and although illustrated as a single beam, may incorporate plural parallel circumferential beams.
The first support frame stage 24 is mounted within a second, or intermediate support frame stage 50 (FIG. 1) which preferably is constructed of plural, parallel released beams circumferentially surrounding and spaced from the first frame 24 and coplanar therewith. Again, the second frame is preferably rectangular, with the first frame being mounted to the second frame by means of x-axis and y-axis connectors 64, 65 and 66, 67 respectively, which support the first frame for motion along the x-axis, in the direction of arrow 68, with respect to the second frame. The y-axis connectors 66, 67 are connected between frames 24 and 50 and are laterally flexible mounting springs which allow the frame 24 to move along the x-axis, the mounting springs having high aspect ratios so that they are flexible in the x direction but are substantially inflexible in the z direction. Motion of stage 24 with respect to stage 50 is produced by, and may be sensed by, comb-type drive capacitors 64 and 65 for precise positioning thereof.
Frame stage 50 is, in turn, mounted to an outermost frame stage 100 which is similar in structure to that of frame 50 and is connected thereto by means of spring beam connectors 114 to 117 and 120 to 123 which are flexible in the y direction, indicated by arrow 78, to permit relative y-axis motion between the inner and outer frames. Motion along the y axis is produced by comb-type capacitors 126 and 128 for precise control of the movement of the central stage. Finally, the frame 100 is mounted in the substrate 12 by means of connectors 140-142, 144-146, 154-157, and 160-163. Electrical interconnections between circuitry carried on the substrate 12 and the various control capacitors and the emitter tips carried on the central platform are described in detail in the aforesaid U.S. Pat. No. 5,536,988. This actuator permits precise control of the motion of the emitter tips so that the tips can be moved at precise intervals with respect to a storage medium to be described.
To illustrate the manner in which the actuator 10 of FIG. 1 may be used in combination with an optical storage medium to produce the ultradense, massive memory device of the present invention, reference is now made to FIG. 3. In this figure, the central stage 16 and its emitter tips 22, described above with respect to FIGS. 1 and 2, are represented diagrammatically by the emitter tip 170 mounted on, and unitary with, an actuator 172. The actuator is movable in the x-y directions indicated by arrows 68 and 78 to position the tip at selected locations with respect to, for example, a 10 μm by 10 μm memory region illustrated at 174. The tip is movable incrementally in an x-y plane parallel to, and close to the surface 175 of memory region 174 by means of suitable capacitive controllers such as those illustrated in FIGS. 1 and 2, for example, so that the tip can be positioned accurately and repetitively at selected locations 176 in an x-y grid indicated at 180. The tip 170 may be moved with respect to the region 174 in incremental steps of, for example, 10 nm, as indicated at 182 and 184.
As illustrated in FIGS. 1 and 2, a multiplicity of closely-spaced tips 170 are provided on the actuator 172. Each tip is tapered and sharpened during the fabrication process described in U.S. Pat. No. 5,536,988, to a minimum diameter on the order of a few nanometers with a height on the order of a few μm, for example. As illustrated in FIG. 4, the actuator (central stage 16) may be a 1 cm by 1 cm platform 188 having an array 190 of emitter tips 170. As illustrated in the bottom view of platform actuator 188, the tips 170 preferably are spaced 10 μm apart, center to center in a regular row and column array. Each tip is associated with, and aligned with, a corresponding memory region 174, shown in phantom in FIG. 4, with all of the tips being movable simultaneously by the controlled movement of actuator platform 188. By mounting the platform to be movable 10 μm in the x direction and 10 μm in the y direction, the entire surface of each of the regions 174 can be incrementally and simultaneously scanned.
Since the tips 170 on actuator platform 188 are spaced 10 μm apart, 1,000 tips can be placed in each row, and 1,000 rows can be provided on a 1 cm2 actuator platform; thus, one million equally spaced tips can be located on the 1 cm square bottom surface of the platform actuator 188. The SCREAM fabrication process described in U.S. Pat. No. 5,536,988, allows the tips to be positioned with great accuracy and reliability, so that an array of one million evenly spaced tips per square centimeter is readily achievable. The capacitive actuator structure exemplified by the capacitive controllers in FIGS. 1 and 2 permit movement of the platform in increments of 10 nm in both x and y directions, and since the diameter of each tip is only a few nanometers, each tip can be positioned at 1,000 locations in each row in the x direction (68) and in 1,000 rows in the y direction, for a total of one million discrete and identifiable locations within its corresponding memory region. With one million tips, each positionable at one million discrete locations, the 1 cm by 1 cm array of tips can specify 1�1012 storage locations on a storage medium, thus providing ultra high density terabit storage.
An optically-activated memory utilizing multiple emitter tips and corresponding memory regions is illustrated in FIG. 5, to which reference is now made. The memory device, which is generally indicated at 200, includes, in the herein-disclosed embodiment, a wafer, or substrate 202 on which is fabricated a plurality of p-i-n diodes 204 each of which corresponds to a memory region 174. The bottom layers of the diodes are common to all of the memory regions 174, but the top layer 206 of each diode defines a corresponding memory region 174 for receiving a suitable storage medium. The storage medium in each region is a layer 208 of a conductive material on the top surface of a corresponding diode, layer 208 having a surface susceptible to modification by an electric field or a tunneling current. A large number of such materials are available, such as Pt, Pt/Ir, WSe2, Au, Ag, Si, Ge, Pt/Co, Ni/Cr, graphite, and the like. Many such materials are capable of nanometer-scale feature formation by electric fields or tunneling currents produced by scanning emitter tips such as the tips 170, but gold (Au) is particularly attractive because it is chemically stable, easy to deposit and, most important of all, erasable. Patterns formed, or written, on gold surfaces by electric fields are erasable by a voltage pulse of opposite polarity, although the written patterns are otherwise stable and uniform and do not disappear by surface diffusion.
To use the nanometer scale emitter tips 170 to write data on the memory regions 174, each tip is positioned very close to the surface of its corresponding storage medium 208, preferably sufficiently close to permit tunneling currents between the tip and the storage medium. A voltage pulse is generated between the tips and the storage medium to produce a tip-to-surface tunneling current and a corresponding electric field to generate a corresponding marker 209 on the memory surface. Light signals are used to produce such voltage pulses in the present invention, the presence or absence of light serving to control the amplitude and duration of the tip voltage pulses. Data to be written is contained in a spacial pattern of an input beam made up of optical write pulses from an optical write source, the pattern being focused on the bottom surface 210 of the substrate 202 to illuminate the various p-i-n diodes. The optical write pulses are larger in diameter than the tips, and usually will be larger than one of the storage areas 174. The presence or absence of a write pulse at each tip location provides the data pattern which is to be recorded in the memory device 200. The substrate 202 is optically transparent so that an optical write pulse, such as the pulse diagrammatically illustrated at 212 (in FIG. 5) generated by a light source 213 will illuminate a p-i-n diode in a corresponding memory region toward which the light is directed. When illuminated by a corresponding optical pulse, a p-i-n photodiode behaves as a current source, with its photocurrent being proportional to the light intensity. As illustrated in FIG. 6, the voltage across the corresponding tip-surface junction, illustrated by curve 214, has to increase as the photocurrent, illustrated by curve 216, increases in order to maintain current continuity in the memory device. Therefore, an input light pulse, such as the pulse 212, is directed onto at least an entire PIN diode 204, where it creates a corresponding voltage pulse across the nanometer-scale tip-surface junction indicated at 218 in FIG. 5.
For regions 174 of the storage medium 200 which remain unexposed by the optical pattern, as indicated by the light input line 220 in FIG. 5, little or no voltage drop appears between the unexposed storage region and the corresponding tip. This occurs because the reverse bias of the photodiode results in negligible current in this region, as illustrated by curve 222 in FIG. 6. The difference 224 between the voltages provided at exposed and unexposed regions permits selective writing of data, in accordance with the presence or absence of a light pulse.
Typically, to write data, a voltage pulse at the emitter tip 170 of between 3-10 volts with a duration of between a few nanoseconds and a few microseconds is used to form in the conductive layer 208 an identifiable surface feature 209. This feature may be in the form of a mound or a dot of gold having a diameter of about 5 nm, and may represent a data bit "1", for example. In the absence of a light pulse, no such feature will be formed, and the absence of a feature may represent a data bit "0". The data writing process for a bit can normally be completed in a microsecond or less and will produce on the corresponding surface of the storage medium a marker, or bit having a diameter comparable to that of the tip which produced it; i.e., on the order of a few nm. After the memory device 200 has been exposed by a first optical pattern and corresponding bits, or features, have been produced on the conductive surfaces 208 of each p-i-n diode memory region to thereby store a first set, or frame, of optical data, the actuator platform 188 is moved to the next incremental position where the foregoing process is repeated for storage of the next data set or image frame in the memory regions 174. Because of the low mass and high mechanical resonance frequency of the tip and actuator assembly, and because the actuator only moves 10 nm to reach the next storage location, tip travel time from one frame to the next can be on the order of microseconds. The markers can, therefore, be spaced on the order of 10 nm apart, center to center, in a grid or array on the surface of each region 174. One million regions 174 can be provided to correspond to the one million tips 170 so that one million data bits can be recorded (in the foregoing example), one for each tip, to produce a single data frame. Since each tip can be moved to a million different locations in its corresponding memory region, whereby each region can receive one million bits, the memory device can store one million frames. The result is that the 1 cm2 device of the present invention has an equivalent data storage capacity of one terabit, and data storage speed in the range of one terabit per second.
As diagrammatically illustrated in FIG. 5, motion of the actuator platform 188 is controlled by variable voltages applied across capacitors 64 and 65 from variable sources 64' and 65' for motion along the x axis and similarly controlled for motion along the y axis by capacitors (not shown), as described with respect to FIGS. 1 and 2.
The p-i-n photodiodes 204 are quantum well devices of known characteristics, and the optical properties of such devices have been extensively studied. The sensitivity of such diodes determines the minimum power required for data writing, but in the present application it is important that the dark current of the device be kept lower than the tip/surface tunneling current over a wide bias range so that a sufficient contrast ratio is maintained to insure discrimination between data input values. The contrast ratio of the diodes is limited by two related factors, the total thickness of the quantum wells and the maximum bias voltage. Arbitrarily increasing the well thickness without increasing the bias voltage proportionally does not enhance the contrast ratio, since the electric field in each well is reduced. Thus, the selection of the p-i-n photodiode is dependent on the current-voltage characteristics of the tip/surface tunnel junction.
The choice of quantum well and substrate materials for the optical read/write memory device of the present invention requires special attention. If GaAs/AlGaAs quantum wells are used, the GaAs substrate has to be selectively removed since it is opaque. One alternative would be to use InGaAs/InGaAsP or InGaAs/InAlAs quantum wells grown on InP substrates which are transparent at the operating wave length. However, the low band gap InGaAs quantum wells lattice matched to InP substrates normally have higher leakage currents and since pseudomorphic quantum well structures many times thicker than the normal critical thickness can be grown under proper conditions, InGaAs/AlGaAs strained quantum wells may be used on GaAs substrates. Because of the low band gap for InGaAs, the GaAs substrate becomes transparent, which eliminates the necessity to remove the substrate wafer.
The data stored in the memory regions 174 in the form of the presence or absence of features 209 can be read out optically by flooding the memory device 200 with read light pulses indicated generally at 230 in FIG. 7 from a source 231. The actuator platform 188 is adjusted so that the array of tips 170 is aligned with a selected frame, or data set, location on corresponding memory regions 174. Thus, for example, in the cross-sectional view of FIG. 7, a single row of six memory locations is illustrated for each of the memory regions 174. The left hand region 174a shows three "features", each of which is identified as a "1" data bit, with three locations without features being indicated as "0" data bits, so that region 174a shows a data sequence 010110 for its six positions. In similar manner, the next adjacent memory region 174b shows two features and thus the illustrated row represents a data sequence 100010. By adjusting the actuator platform 188 so that the tips 170 are aligned with the fourth data position in a row (as illustrated), the frame, or data set, corresponding to that data position is read out by the readout beam 230.
Readout is accomplished when an incident readout beam strikes the bottom surfaces of the p-i-n photodiodes 204, causing an increase in their photocurrents and a corresponding increase in the tunneling current to those tips 170 which are aligned with a feature 209. For each p-i-n diode in which there is a feature aligned with a tip for the particular frame being read out, a higher voltage drop exists in the corresponding quantum well. As is well known, the absorption spectrum for multiple quantum wells changes significantly with the applied electric field due to the well-known quantum confined Stark effect, as illustrated in FIG. 8. Curve 232 illustrates the absorption wavelength for a low applied electric field in a multiple quantum well, while curve 234 shows the absorption peak for a high applied electric field. As illustrated, the exotonic absorption peak is red-shifted by the applied electric field and thus is red-shifted toward the wavelength of the readout beam 230.
The incident read beam is reflected from the bases of the diodes 204, with the reflection from diodes in which a feature is aligned with the corresponding tip 170 showing a weaker intensity in the reflected beam, as generally illustrated at 236 in FIG. 7. The different intensities in the beams reflected from the 1 and 0 states, due to the different absorption coefficients of the respective diodes, produces a spacial pattern in the reflected beam 236 which corresponds to the data in the individual memory regions 174 at the selected frame position. Since a photocurrent in the diodes 204 is also used to produce the features 209, it will be understood that to make the readout process nondestructive, an optical readout pulse duration shorter than the material response time must be used. Since the fastest material response to an electric field is about 100 ns, a light pulse of 1 ns is sufficiently short for nondestructive data readout, and light pulses of this length can routinely be achieved by Q-switched semiconductor lasers.
In spite of the advantages of the foregoing optical storage and readout system, the moderate contrast ratio between the 1 and the 0 datapoints requires complicated optical components in order to provide an accurate readout. One cost-effective solution to this problem is to integrate an optoelectronic transition circuit and amplifier in the storage device itself. This can be accomplished by the use of optoelectronic thyristors of the type illustrated in FIGS. 9-14, to which reference is now made.
FIG. 9 illustrates an optoelectronic parallel read/write memory device 250 which includes a plurality of memory regions 174, as previously discussed, with a closely adjacent, relatively movable actuator platform 188 carrying multiple tips 170, also as discussed above. In this case, however, each memory region 174 is constructed of a pnpn thyristor 252 configured as illustrated in the corresponding equivalent circuit 254 of FIG. 10. Thus, the thyristor includes a p layer 256 of AlGaAs, an n layer 257 of GaAs, a p layer 258 of InGaAs, and an n layer 259 of AlGaAs on an n-type GaAs substrate 260. The actuator 188 is negatively biased with respect to the substrate 260 by source 262, and the top layer 256 of the thyristor 252 is open, or floating, in the write mode.
The n layer 257 of the thyristor carries the conductive layer 208, as discussed above with respect to FIG. 5, on which the features 209 are formed by tunneling currents from corresponding tips 170. The tunneling junction 218 between the tips 170 and the surface of the conductive layer 208 is illustrated in the equivalent circuit of FIG. 10, also at 218. The n type GaAs substrate is transparent to input light pulses 212 so that the memory device 250 can be back-illuminated without having to remove the substrate 260.
Since the top p layer 256 is floating, the pnpn structure behaves as a heterojunction npn bipolar phototransistor having its base current proportional to the input light intensity. As illustrated in the load line analysis of FIG. 11, wherein the load line of the tunneling junction 218 is illustrated by curve 264, the light pulse 212 produces a voltage-current characteristic illustrated by curve 266, while the absence of light, indicated by light line 220 in FIG. 9, results in a voltage-current curve 268 by representing the dark current; i.e., or a data input 0. The magnitude of the voltage pulses can be tuned with the light intensity.
As illustrated in FIG. 11, the presence or absence of a light pulse produces a voltage swing 270 which can be adjusted from less than one volt to more than five volts, in the illustrated embodiment, the voltage level being selected to be sufficient to produce the data features 209, as discussed above. As discussed above, the input pulses 212 and 220 represent optical data supplied in parallel to a selected position, or frame, for the actuator 188 to produce corresponding data points or features on the memory segments 174. The actuator 188 is then moved to a next selected frame location and another optical light pattern is directed to the memory device to record a next frame of data.
To read data stored in the form of features 209 in the optoelectric memory device 250, the device is operated as a light emitting thyristor, as illustrated in FIG. 12, wherein similar components are similarly numbered to the illustrations of prior figures. The circuit connection for the data readout includes a lead line 280 connected by way of contact 282 to the p layer 256, to which a trigger voltage V0 may be applied. The resulting equivalent circuit is illustrated in FIG. 13, where the pnpn layers operate as a feedback loop made up of a pnp transistor 284 and an npn transistor 286 interconnected base to collector, as shown. When the loop gain is equal to 1 in such a circuit, the feedback becomes positive and a large current is built up, only limited by the load resistor 288 connected to the emitter of transistor 284. The pnpn thyristor 252 is responsive to a minor change in the tunneling current flowing through the tip/surface tunnel junction 218 to the base of the pnp transistor 284. An extra current of a few nanoamperes can turn the thyristor from an off-state to an on-state, resulting in an exceedingly large contrast ratio.
One feature of this design is that the optoelectronic thyristor 252 behaves as an optical memory by itself, so that once it is turned on, it remains on, even when the turn-on signal, which is the tunnel current, is removed. Therefore, a reset signal 290 is required to reset the optoelectronic memory before the tips 170 are moved to a new position for the next read or write operation. The voltage V0 having an on value shown at 290 is applied by way of line 280 to the thyristor 252 to provide a read cycle in the memory. A reset cycle portion 294 follows the read cycle to reset the read circuitry for the next read cycle.
To read the data stored on the layer 208, the actuator 188 is moved to align the tips 170 with a selected frame location, and a read voltage V0 is applied to p layer 256 in each memory region, switching the respective thyristors on and producing an output light beam 296 having a spacial pattern corresponding to the data being read. The p layer 258 is the light emitting layer, and since the substrate 260 is transparent, the light beam 296 is emitted. As indicated by the load line 300 in FIG. 14, application of the voltage V0 produces a very low light output representing a data "0" for the memory regions 174 where no feature is aligned with the tip 170, and produces a relatively high output representing a data "1" where a feature is present. It is noted that both the actuator 188 and the substrate 260 are at ground potential so that the application of voltage V0 at line 280 produces a voltage across the tunnel junction 218 to provide the required turn on voltage for the pnpn thyristor.
Another form of the invention is illustrated in FIG. 15, wherein the memory device of FIG. 1 is modified by eliminating the conductive layer 208 on the upper surface of the pin diode 204. Instead of this conductive layer, a metal or metal coated tip 170 is provided, the tip having, for example, a thin layer 310 of gold. The tips are positioned at selected locations adjacent the top layer 312 of the p-i-n diode. In the writing cycle, reverse-biased voltage pulses are applied between the tip and the semiconductor p/n junction by the application of a spatially patterned light beam, as previously discussed. At those memory regions 174 where no light is directed, the voltage drop occurs primarily in the reverse-biased pn junction of the diode 204 and no data writing is produced. However, where the light is on, as at pulse 212, the photocurrent reduces the resistivity across the pn junction and the voltage drop is switched to the tip-semiconductor junction 218. The resulting strong electric field around the tip area stimulates ion emission, so a small metal dot is ejected from the tip onto the semiconductor surface, whereby a "bit" is written. Thus, light is the enabling signal for data writing. The required power to control the writing process can be less than 1 microwatt, and there are no specific requirements on its wavelength and coherence. Commercially available semiconductor laser diodes and LEDs can be used as the light source.
In the reading cycle, the tunneling tip 170 is scanned over the semiconductor surface with a forward bias voltage applied between the tip and the surface. In the unwritten area, the contact resistance between the tip and the semiconductor is high enough to block any current injection. When the tip contacts, or is close to, the metal dot, or feature, written on the semiconductor surface, a much lower contact resistance is achieved and the current injected into the semiconductor quantum wells generates light emission for optical reading, as discussed above. Because of the high quantum efficiency for the semiconductor quantum wells, almA current pulse with a 0.001% duty cycle can generate enough light for detection by a CCD camera. This corresponds to a continuous wave current of 10 nA to read a "bit". Such a small power consumption allows one million bits to be read simultaneously in a 1,000 by 1,000 tip array. Furthermore, the data storage material itself is a light emitting material so no external light source is required.
Although the present invention has been described in terms of preferred embodiments, it will be apparent that numerous modifications and variations can be made without departing from the true spirit and scope thereof.
Patent Citations
Non-Patent Citations
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Blue Bomber Report Record: 7–11–0
Winnipeg Free Press - PRINT EDITION
with Paul Wiecek
TIGER-CATS (4-7) at BLUE BOMBERS (2-9)
Tonight, 7 p.m. TV: TSN Radio: CJOB
Bombers line: They're bad and appear to be getting worse. The return of QB Buck Pierce should help -- but this team's problems only start at quarterback, they don't end there. The only safe prediction about this club these days is that there won't be any laughing on the bench if they're getting drilled again this week.
Ticats line: The Ticats were 3-2 when they came to town in August and their narrow loss here, which also represents Winnipeg's last win, began a five-game Hamilton losing skid that ended with a 51-8 win over the Edmonton Eskimos last weekend.
Bottom line: If you don't think the Bombers can win this game, then you probably don't think they're going to win another game all season. And you might not be wrong.
LIONS (8-3) at ESKIMOS (5-6)
Saturday, 6:30 p.m. TV: TSN
Lions line: B.C. has the best record in the country this season, mostly because they're 5-1 at home. This one's on the road.
Eskimos line: Edmonton has lost three in a row, their offence is almost as bad as Winnipeg's and this week they announced they were bringing in an "adviser" to help offensive co-ordinator Marcus Crandell. Yikes.
Bottom line: A battle between the best defence in the league and the second-worst offence.
ARGONAUTS (6-5) at ALOUETTES (7-4)
Sunday, noon TV: TSN
Argos line: The Argos have a winning record but have actually given up more points this season -- 280 -- than they've scored -- 278. They've proven remarkably efficient at making the points they have scored count and their defence has exceeded just about everyone's expectations this season.
Alouettes line: The Als have also given up more points than they've scored -- 327-301. But they've been dominant at home, where they boast a 5-1 record.
Bottom line: A win and the first-place Als would have a four-point cushion on second-place Toronto with six games to play.
STAMPEDERS (7-4) at ROUGHRIDERS (5-6)
Sunday, 3 p.m. TV: TSN
Stampeders line: The Stamps are riding a four-game winning streak, thanks in large part to what is shaping up to be a record-breaking season for running back Jon Cornish. Cornish needs to average just 79 yards per game the rest of the season to eclipse the 56-year-old single-season rushing yards record for a Canadian set by Normie Kwong (1,437 yards).
Roughriders line: Head coach Corey Chamblin said someone is going to lose their job if his club doesn't hold Cornish to under 100 yards rushing this week. Someone is going to lose their job.
Bottom line: Chamblin provided an amusing diversion with his Cornish pledge this week. But it won't be so funny if someone actually loses their job because the coach is writing cheques his defence can't cash.
THE PICKS (straight up)
The Free Press has assembled a panel this season to offer their fearless predictions every week. Joining us this year are CJOB's Bob Irving, and from the Free Press, sports editor Steve Lyons, columnists Gary Lawless and Doug Brown and lead football writer Paul Wiecek:
Irving: Winnipeg, B.C., Toronto, Calgary
Lyons: Winnipeg, B.C., Montreal, Saskatchewan
Lawless: Hamilton, B.C., Montreal, Calgary
Brown: Hamilton, B.C., Montreal, Calgary
Wiecek: Hamilton, B.C., Montreal, Calgary
Last week (overall): Irving 4-0 (30-14); Lyons 4-0 (27-17); Brown 4-0 (25-19); Lawless 3-1 (23-21); Wiecek 4-0 (20-24).
Republished from the Winnipeg Free Press print edition September 21, 2012 C2
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OS X 10.8 (Mountain Lion) Won't Support Some 64-bit Macs With Older GPUs 417
from the not-invited-to-the-mountain-lion's-reindeer-games dept.
We've improved Slashdot's video section; now you can view our video interviews, product close-ups and site visits with all the usual Slashdot options to comment, share, etc. No more walled garden! It's a work in progress -- we hope you'll check it out (Learn more about the recent updates).
Holy upgrades Batman!
If they make the next version of X-Code support only Mountain Lion like they made the current version only support Lion - I'm going to scream! Because my clients wanted to support features of the latest iOS, I had to upgrade to a new Mac because my older model couldn't run Lion - which is required for the latest X-Code.
First Post because my graphics card is awesome!
Actually, the GPU in the Retina MBP is not all that awesome - the huge pixel density is pushing the Nvidia 650M in the retina Macbook Pro to its limits, causing some performance issues compared to the equivalent desktop on the non-retina version. Examples include rapid scrolling on webpages and so on.
First gen MBPs are 6+ years old... so fans can still brag about the 5+ year life...
Math is hard.
If you are uncertain of the date from which your Mac was produced, I suggest the CoconutID freeware. [coconut-flavour.com]
It ID's your MacBook (or other model) and pegs the manufacture date within a few days of precision. Clever - it can also perform a lookup and see if a Mac with your ID has ever been reported as stolen. Interesting, for some eBayer's.
If you ARE on and Mac portable, look at their Coconut Battery app, at the same location. Great for managing battery age, charge history and cycles. It got me free replacement batteries at the Apple Store, on two different machines/occasions. I haven't ever managed that with Sony or Lenovo...
I have a 5yo Vaio that is perfectly capable of running Ubuntu with XP and Win7 VMs (for testing websites in IE7-9). My (web designer) colleague has a 5yo Mac that he can't even run any 2yo browsers on NATIVELY!?!
And when X Windows or Wayland requires OpenGL 3.x throughout the OS to run then we can talk. OS X 10.8 baseline profile for OpenGL is 3.2. That means system-wide Quartz Extreme is accelerated via that baseline profile. Seeing that GNOME and KDE latest are just now sucking hind tit with OpenGL ES 2.0 bits which is a subset of OpenGL 2.x it is rathers clear that older GPUs will be supported on those DEs. If they don't complain when KWin and GNOME's equivalent requires OpenGL 3.x accelerated GPUs tells me they'll have grown up.
Make it right before you make it faster.


text:
The Dutch Polymer Institute (DPI) was established in 1997 as a public-private partnership to perform pre-competitive research into polymers and their application, linking scientific knowledge to the industrial need for innovation. This results in added value for universities in scientific publications and for companies in intellectual property rights and the possibilities to execute new activities.
Some 200 researchers (PhDs and Post-Docs) are currently involved in DPI projects at knowledge institutes and companies throughout the world.
Click here to view a short introduction movie.
Controlling the Dominant Length Scale of Liquid–Liquid Phase Separation in Spin-coated Organic Semiconductor Films
Jacobus J. van Franeker, Daniel Westhoff, Mathieu Turbiez, Martijn M. Wienk, Volker Schmidt, and René A.J. Janssen
DOI: 10.1002/adfm.201403392


text:
I started writing my first Zend Framework 2.0 (beta 1) PHP application using php 5.3.
I actually created a skeleton project and module based on the following url: http://packages.zendframework.com/docs/latest/manual/en/zend.mvc.quick-start.html
I want to add forms to the module I created. the my question is how do I configure the module to know where to fetch the forms in?
my module name is called
LoginModule and I created a new form called LoginForm (that extends Zend_Form) and I placed it in my_proj/module/LoginModule/src/LoginModule/forms
how do I configure that module to know where to fetch the form class from ?


text:
Appointments & Offices
Check insurance plans, locations and make an appointment
Is Robert Develle accepting new patients?
If you are a new patient, please check with Robert Develle before scheduling an appointment.
What insurance does he accept?*Less
Office Locations
- 1509 Wilson Ter
- Glendale, CA 91206
- (818) 409-8187 (Office)
- (949) 367-1011 (Fax)


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Genealogy 101
Roger Younghusband of the Will Grundy Genealogical Society will be at the Peotone Library on Saturday, April 11th at 10 am - 11 am. The first class will be about learning basic forms to use and will also touch on many beginning topics. This is the first in a 9 class series.
Please register for this class online or by calling the Peotone Library at 708-258-3436.
Universal Class
The Peotone Public Library District in partnership with Recorded Books, is pleased to announce the introduction of Universal Class Library Edition, a powerful new online continuing education service designed specifically for use by the patrons of public libraries. These courses are offered for free to the members of our district.
Affordable Care Act
In March 2010, a health reform law was passed called the Patient Protection and Affordable Care Act (ACA). The law was created to make preventive care more accessible and affordable for Americans. This law (known as Obamacare) will take effect October 1st, 2013 and requires everyone to have health insurance or face financial penalties.


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Sore Throat After Topping With Condom Does It Mean I Have HIV
Here's a taste of what TheBody.com has to offer on this topic:
Ask the Experts
Condom Broke: HIV+ bottom, HIV- Top... Chance of infection?Hi Robert,First, I want to thank you for being such an incredible resource for those of us out here who are trying to find information on HIV. I was diagnosed as positive a year and a half ago and you've been there since week one. So thanks,...
Response from Robert J. Frascino, M.D.
The Robert James Frascino AIDS Foundation...almost at the same time as starting the PEP, my tongue became coated with a yellow mucus and I developed night sweats and a very sore throat which only started to subside on day 5 of the course. I have suffered the usual side effects from the PEP... Read more »
PEP Treatment HELP? (PROPER CONDOM USE, 2009) (PEP AND THE NEED FOR HIV SPECIALIST, 2009)Hi there, I found your contact details online and your help would be very much appreciated as I am... Read more »
HIV and condomsHello Dr. Bob! I was curious as to what the risks were of contracting HIV while using a condom. I'm... Read more »
Condoms... What Are Condoms? What Are They Made Of? How Are Condoms Used? Using a Male Condom Using a Female Condom Nonoxynol-9 Condom Myths Read more »
Gonorrhea...soreness, bleeding, or painful bowel movements. Rectal infection also may cause no symptoms. Infections in the throat may cause a sore throat but usually causes no symptoms. What are the complications of gonorrhea? Untreated gonorrhea can... Read more »
Women Using Latex Diaphragm With Condoms Had Same HIV Incidence as Those Who Only Used Condoms, Study Says... Women who used latex diaphragms and condoms as an HIV prevention method had the same HIV incidence as those who only used condoms, according to a study published online Read more »
Women and HIV/AIDS... Table of Contents A Look at the Numbers Is HIV Different for Men and Women? Treatment in HIV+ Women: Efficacy, Side Effects, and Drug Interactions Gynecological Issues Read more »
Connect With Others
acute hiv after condom breakage???
Posted by Anonymous, 2 Replies...nodes under my armpits became VERY swollen... soon followed by the lymph nodes in my groin... NO FEVER, NO RASH, very mild sore throat... i didn't think anything of it till i had this dream that i was hiv poz, and then all hell broke loose...... Read more »
broken condom - 30 seconds - broken lives
Posted by Anonymous, 6 Replies...itself as to what I have: 1. PN [burning palms & soles from 10 day onwards] 2. joint aches 3. stomach cramps and diarreah 4. sore throat 5. frequent urination 6. penile discharge & Milky urine 7. Groin pain 8. Lymphnodes swollen 9. Thrush... Read more »
Mouth sores
Posted by Anonymous, 3 Replies...lubricant smeared on the bottom half of my penis which I quickly wiped off. No fever, but I got achy for a few days with a mild sore throat that lasted a day or two and I dropped 3-4 lbs. I tested neg six weeks later via oral rapid test.The... Read more »
10 months of no answer symptoms described
Posted by Difficult, 4 Replies...Later that stopped and I went through a white tongue dry mouth period for 3 months. Anyways, at 17 days all symptoms besides sore throat had cleared up and I had a viral load test, cd4 test, and cbc. The results were undetectable vbdna, 1000cd4... Read more »
Resource Centers
Guides for People With HIV


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Anybody ever been here?
Looks great would love to go.
'' If interested in mature hostas of the Large
variety bring SUV or truck to haul.''
Says he is 86 years young this year.
Here is a link that might be useful: CORY'S WILDFLOWER GARDENS
For some reason, the name is familiar...I am trying to remember a previous
post by a female member but my memory banks are not cooperating! Perhaps she will see this and respond. :-)
What a terrific sale on hosta! Wow! They are all so huge and looking goooood - good thing I don't live close!
I'm thinking it would be a very interesting visit just to meet the man and hear his stories...then spend the remaining hours admiring and touching all the hosta. That would surely be a trip...you seriously considering going? That would be an experience for sure.
I'm going to read up on the other threads you mentioned...thanks. :-)
The place is about 3 hours east of me. I had e-mailed Cory about a month ago to find out what he does with his potted Hostas over the winter, being that his winters would be like mine. I also wanted to know what his normal prices where, he has a end of season sale, all pots $10.00 each. Cory responded to my e-mail promptly and was very informative. My Grandfather is also 87 years young and I really want to take him there next spring, early summer, although we may have to spend the night at my sisters, because my Grandfather really likes to talk!
Hopefully, him and I can make a few road trips next year, Hallson's, Schmid's and maybe even Ken's...since we would be in the area...;-)
(just kidding Ken)


text:
First Sign Of Hiv In Women
Here's a taste of what TheBody.com has to offer on this topic:
Get the Facts
Women and HIV/AIDS...years passed, women have emerged asanother group hard hit by the AIDS epidemic. Even though more men than womenstill have HIV in the US, women are catching up. In some countries, HIV+ womenoutnumber HIV+ men. The proportion of HIV/AIDS cases among women has more than tripled from 8percent in 1985 to an alarming 27 percent in 2008. That means that about one infour Americans living with HIV are women. HIV has also become the thirdmost-deadly...
Ask the Experts
HIV (Pregnant Woman)Dear Doctor,My girlfriend is pregnant past 8 months.We did test for HIV in a well reputated hospital in August and fairly it was negative.But after having test she went to her mother house.There she went to a district hospital as a place is not well...
Response from Robert J. Frascino, M.D.
The Robert James Frascino AIDS Foundation...impressive list. I'll reprint a sample of these archival posts below.Thank you for your donation to the Robert James Frascino AIDS Foundation (www.concertedeffort.org). It's urgently needed and warmly appreciated.Be well. Stay well. Cyber hugs to... Read more »
Is anal sex ok with a woman that has HIV/AIDSI am interested in a woman who has HIV/AIDS. She wants to have anal sex not vaginal sex and that is fine with me. Her disease is not active or full blown. Is it all right to have anal sex with her if we take it slow and easy and use lots of K-Y...
Response from Robert J. Frascino, M.D.
The Robert James Frascino AIDS Foundation...Hello, Let me clarify a few points for you:1.There is no such thing as an HIV infection that is "not active."2.We don't use the term "full blown AIDS," because there is no such thing as "partially blown Read more »
Natural Birth for HIV+ WomanWhat are the risks for an HIV woman that has already given birth by C-section over 2 years ago and wishes to have a natural birth this time? Her count is very low almost undetectable.
Response from Katherine Luzuriaga, M.D.
University of Massachusetts, Medical School...antiretroviral treatment, the chance of transmitting the virus to your baby is very low and vaginal delivery can be considered. Many women can safely delivery a baby vaginally after a prior C-section. However, you should consult with your... Read more »
HIV/AIDS among african american womenI'm doing a research paper on African American women who are or at risk of being infected with HIV/AIDS. I'm looking for any statistics related to the subject. Do you know of any information on this or could you direct me to a good resource?
Response from Katherine Luzuriaga, M.D.
University of Massachusetts, Medical SchoolA good start for the statistics would be the CDC web site at www.cdc.gov Read more »
AIDS 2010 Opinions: U.S. Funding for Global HIV/AIDS Programs; Empowering Women, Girls in Fight Against HIV/AIDS... Global Health Leaders Respond to Recent New York Times' Opinion Pieces Two global health leaders respond to AIDS-related opinion pieces in the New York Times letters section. The first letter, Ambassador Eric Goosby, U.S. Global AIDS Read more »
Women's HIV/AIDS Conference Delegates Develop Action Plan to Foster Women's, Girls' Leadership in Fight Against Disease...Nairobi, Kenya, released a 10-point action plan that aims to foster leadership roles of women and girls in the fight against HIV/AIDS, the Nation/AllAfrica.com reports (Wafula, Nation/AllAfrica.com, 7/9). The conference, organized by the World... Read more »
HIV & Me: A Woman's Guide to Living With HIV: HIV in Women and Men: What's the Difference?...minister who stands up, publicly and boldly, feeling beautiful and elegant, saying, 'I'm not just HIV positive, but I'm living with AIDS. And this is what AIDS looks like.'" -- Bishop Joyce Turner Keller, Ph.D., diagnosed in 2001 Biology ... Read more »
Kenya to Host First International Conference on Women, HIV/AIDS...leaders and policymakers, according to a YWCA statement. According to the statement, the summit aims to address the impact of HIV/AIDS on women and girls and will examine issues such as violence against women, poverty and children's rights, and... Read more »
Connect With Others
Poz.com on Women with HIV
Posted by Anonymous...lack of both information and interest. There were other problems, too, with the fact that doctors treating people with HIV or AIDS back then had mostly male patients. When mine examined me, they usually skipped the female parts of my body... Read more »
Living with HIV as a Young Woman
Posted by asya...others be more aware. http://www.savvymiss.com/ambitious-women/ambitious-women-archive/article/im-23-and-living-with-hiv-one-womans-story-2868.html Read more »
I'm 23 and Living with HIV: One Woman's Story
Posted by asya...I just read an article on SavvyMiss.com about a 23-year-old woman living with HIV and her struggle with the disease. I can't believe she has to go through this at such a young age, but she is making a huge difference Read more »
hiv from fingering a woman?
Posted by Anonymous, 3 Replies...next day the "scratch" is now scabbing over. since it wasnt scabbed over while i was fingering her would it be possible for hiv to enter through the scratch? or is it only possible for deep wounds on fingers? Read more »
Resource Centers
Guides for People With HIV


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Face Treatment Oil Santal, 30ml
Item No.1231040028
Soothing relief for Dry or Extra-Dry skin. 100% pure plant extracts with no preservatives. Clarins' essential oils of Sandalwood, Cardamom and Lavender tone, soothe, comfort and decongest skin that is dry, irritated or stressed. Hazelnut Oil softens, smoothes and reduces redness. Helps prevent moisture loss and the formation of fine lines.
This item is available for
UK Home Delivery Free (UK orders over £30) or £3.99
Delivered within 4 working days
Next or Named Day Delivery
7 days a week between 8am - 6pm
Monday to Friday - order by 7pm - £4.99
Saturday & Sunday - order by 6pm - £4.99
Next or Named Evening Delivery
7 days a week between 6pm - 10pm
Monday to Sunday - order by 10pm - £6.99
Collect from store the next day - FREE
Order before 7pm for next day collection after 12pm midday
Show participating stores
Full Delivery details
- 30ml
- 100% Pure Plant Extracts
- Free gifts are while stocks last. Gift is out of stock if not added to bag & NOT valid if used with a discount promo code


text:
By Bill Graziano
on 29 July 2000
| 3 Comments
| Tags: Queries
Alejandro writes "Please help me, I can't write the syntax for something like this: search?cat1=America&cat2=EEUU . . . "
MySQL = "SELECT * FROM MiTable WHERE cat1='" & Request.QueryString("cat1") & cat2='" & Request.QueryString("cat2") "'"
Select *From MiTableWhere cat1 = 'America'and cat2 = 'EEUU'
MySQL = "SELECT * FROM MiTable "MySQL = MySQL & " Where cat1='" & Request.QueryString("cat1") & "'"MySQL = MySQL & " and cat2='" & Request.QueryString("cat2") & "'"
Select *
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Winnipeg Free Press - ONLINE EDITION
Sheriff's officers entangled in porn video case charged with sexual assault
Two Manitoba sheriff's officers at the centre of a high-profile civil court case are now facing criminal charges for allegedly drugging and sexually assaulting a 30-year-old woman.
Richard Gordon, 45, and Jackie Burgoyne, 34, were arrested Wednesday following a police investigation that began with a complaint in May. The Free Press uncovered details of the case through court documents Friday, prior to Winnipeg police issuing a news release confirming the arrests.
"It was reported that the victim attended to the residence of a male and female acquaintance. While at the residence, a substance was administered rendering the victim unconscious. When the victim woke up, she discovered that she had been sexually assaulted," police said in the release.
Gordon and Burgoyne have both been released on promises to appear in court on Jan. 8. The allegations have not been proven and they are presumed innocent.
The pair have been involved in a six-year legal saga with an amateur Winnipeg porn star which made headlines across the country but continues to gather dust with no apparent end in sight.
The dispute was set to go to trial in 2010, but those dates were adjourned and no new ones have been set. Manitoba Court of Queen's Bench Justice Brenda Keyser has been appointed to mediate discussions between the parties to see if an out-of-court settlement can be reached.
Gordon and Burgoyne, who have been living common-law for several years, were suspended without pay in December 2006 after justice officials learned of a racy online video that showed them in consensual sex acts with a woman named Oshean de St. Claire de Guise. Oshean's website revealed an explicit, 45-second clip of the video and encouraged visitors to purchase a membership to see the entire 40-minute romp. The website contained several other videos and promises: "No paid actors and no script... this is REAL reality porn."
The couple got their jobs back in early 2007 and also filed a lawsuit, claiming they didn't knowingly consent to having the video become public. They met Oshean and her husband, Johannes, in a Winnipeg bar during Grey Cup week in November 2006 and said they agreed to be filmed "privately" for their own viewing pleasure.
Lawyers representing Oshean and Johannes fired back, saying the sheriffs knew exactly what they were getting into and don't have a legal leg to stand on in trying to quash the video they have dubbed The Grey Cup Blond. They have also produced signed consent forms in which the sheriffs agreed to "participate in adult photo/video production for commercial purposes."
A judge ordered a temporary injunction in April 2007 that ordered Oshean to remove the specific video from her website. He refused to shut down the entire site as the sheriffs had requested.
However, the saucy video remains in legal limbo and could be re-posted and distributed for sale if Oshean and her husband get a favourable ruling.
Both sheriffs say their lives have been forever affected by their involvement in the videotaped encounter. They claim Oshean and Johannes plied them with alcohol, which likely contributed to them not understanding the apparent terms of the consent forms they signed.
Oshean and Johannes claim the sheriff's officers initiated the sexual acts that night by asking numerous questions about the adult entertainment business. The couple claimed they were "swingers" with previous experience in group sex, according to court filings.
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Kenn Starr – Square One
Kenn Starr releases Square One, his first album for eight years, and although it's a rinsed cliche my word it was worth the wait. This album is one I've been anticipating literally since I first got in to hip-hop – Kenn Starr was one of the first MCs I heard and holds responsibility for my taste in music – and now it's dropped… man… Some type of feeling.
The thing about Kenn Starr is that he holds five stars in every attribute you could want in an MC: silky flow, smooth voice, intelligent lyrics, wordplay, substance without an imposing degree..