text:
Gear Question
hi all, could someone please comment on...
hi all, could someone please comment on the inside arrangement? so there's the main compartment. is there any mesh paneling in the main compartment? any smaller pockets? and then there's the front zippered pocket? is it deep - running down the entire length of the bag? and does it have any smaller, paneled pockets?
while i don't have a lot to carry, i like keeping the various small things organized. lastly, does this bag keeps its shape when not filled?
Andrew McManama
Hey there! The main compartment doesn't have andy other pockets in it, but it does have plenty of space inside. Although if you need to get to the bottom of the pack it is slightly inconvenient but not too bad. The front zippered pocket is not very deep, maybe 1/2 to a 1/3 the length of the bag. It does have 2 mesh side pockets and the rip cords can hold items as well. I have found this pack perfectly adequate for long day hikes and I imagine it can be used for an ultralight overnight as well. i also like the idea of the water reservoir being separate from my gear on the inside.
View More Details on Osprey Packs Daylite Backpack Attachment - 750cu in


text:
Method for oxidation of a silicon substrate under ultrahigh vacuum base conditions, wherein the substrate undergoes a number of oxidation cycles with exposure to oxygen and heat treatment for converting the adsorbed oxygen into silicon oxide.
1. Method for oxidation of a silicon substrate under ultrahigh vacuum base conditions, wherein said substrate undergoes at least one oxidation cycle and heat treatment for transforming the adsorbed oxygen into silicon oxide, characterised in that said oxidation cycle is repeated for a predetermined number of times.
2. Method according to
3. Method according to
4. Method according to
5. Method according to
6. Method according to
7. Method according to
8. Method according to any single one of the previous claims, wherein said heating is performed under vacuum conditions with a pressure less than 10−6 Pa, but preferably less than 10−7 Pa.
[0001] The present invention relates to a method for oxidising silicon under ultrahigh vacuum base conditions.
[0002] The semiconductor industry is continuously aiming at increasing the switching speed of transistors in order to increase the performance of computers. One of the most critical aspects for increased speed is the reduction of the width of the MOS (Metal-Oxide-Semiconductor) transistor gate and—correspondingly, following certain recognised scaling rules—the reduction of the thickness of the gate oxide. This oxide is the insulating layer between the semiconductor surface inversion layer through which current flows in parallel with the surface and the gate electrode of the transistor, which turns on and off the inversion condition, and thus the current flow. Typically, insulating silicon dioxide layers on silicon in transistors of year 2000 are between 20 and 100 molecular layers thick, and there is an assumed limit of thickness to withstand electron tunnelling of about 10 molecular layers of bulk silicon dioxide, which corresponds to a thickness of approximately 2.5 nm. A molecular layer is defined as the average thickness of a monolayer of bulk SiO2, or exactly 0.24 nm for a density of 2264 kg/m3. Thus the controllable growth of such thin layers, meeting a number of demands on their bulk and interface properties, is vital for the industry.
[0003] Recently, researchers at Bell Labs have employed a method to produce a silicon dioxide layer with a thickness of five layers of silicon bound to oxygen, equivalent to 2.5 molecular layers with the definition discussed earlier. This was achieved by a rapid thermal oxidation of a clean silicon surface by exposure to 1000° C. for 10 seconds.
[0004] Thermal oxidation, including rapid thermal oxidation, by oxygen exposure at temperatures above 700° C. is the most well known method to achieve thick oxide layers, but has it limitations for the ultrathin oxide regime. Thus, according to work by A. Feltz et al. "High temperature scanning tunneling microscopy studies on the interaction of O2 with Si(111)−7×7 surfaces" in Surf. Sci. 314, pp. 34 (1994), the method is very difficult to control, as it is a balance between surface etching and oxide growth. To achieve a certain thickness of an oxide layer in a controlled way requires a large number of trial and error experiments, to establish the "processing window", which means the boundaries of the region in parameter space inside which the reaction leads to controlled and scaleable outcomes. The limiting factors are trench formation and island formation of the oxide, counteracting the formation of a smooth oxide—silicon interface, which is a requirement for the successful operation in devices.
[0005] Achieving ultrathin layers, that is to say from one layer up to 50 layers, in a controlled way demands a very thorough control of the actual process parameters such as dosing and heating phase, temperature ramping and cooling speed, making this method very hard to control and to scale.
[0006] Intel Corporation has recently produced even thinner silicon oxides than reported by Bell Labs. Their researchers have produced a "three-atom thick oxide layer" (probably equivalent to one averaged molecular layer according to the earlier definition) and included it in a working transistor. This obviously causes a renewed interest in finding the optimal methods for the production of the thinnest possible oxides on silicon.
[0007] In International patent application WO 00/59016, a method has been disclosed to achieve a thin and smooth silicon oxide layer with a thickness of less than 6 nm on a silicon substrate with increased tensile stress. This method includes a first step, where the silicon surface is exposed to oxygen at room temperature, after which the surface of the substrate is continuously exposed to oxygen at a higher temperature between 500° C. and 700° C.
[0008] As the oxidation happens continuously at the higher temperatures, the method is not suited for the controlled growth of layers only a few molecular layers thick.
[0009] The first step for the oxidation disclosed in the patent application WO 00/59016, where the surface of the substrate is exposed to oxygen at room temperature is reported to be "oxidation", which could lead to an interpretation of this step to have produced a single layer of oxide. However, this is a misleading assumption, because formation of a stable oxide or oxide-like layer does not occur at room temperature. The binding of oxygen on the surface in this case is mainly a chemical adsorption, which is now well known to differ from a genuine oxide. A discussion of this can be found in P. Morgen et al., "From oxygen adsorption to oxidation of silicon" in Journal of Computational Materials, 2001 (accepted for publication).
[0010] The formation of thicker silicon oxide layers on silicon has been reported in a number of patents and articles. U.S. Pat. No. 5,817,581 discloses a method for oxidation of silicon implying wet and dry oxidation to achieve silicon oxide layers with thickness of several hundreds of nanometers. In the article by P.Soukiassian et al. "Catalytic Oxidation of Semiconductors by Alkali Metals" published in Physica Scripta, Vol. 35, 757-760 (1987), a method is reported for increasing the speed of oxidation of silicon by exposing the clean silicon surface to an alkali metal as a catalyst prior to oxidation at high temperature. The reported methods are not documented to cause a controllable formation of thin and smooth oxide layers with a control of the desired thickness.
[0011] From the article by P.Soukiassian et al. "Electronic properties of O2 on Cs or Na overlayers adsorbed on Si(001)2×1 from room temperature to 650° C." published in Physical Review B Vol. 35, No. 8, 4177-4179 (1987), and from P.Soukiassian et al. "SiO2-Si interface formation by catalytic oxidation using alkali metals and removal of the catalyst species" published in J.Appl.Phys. 60 (12) 4039-4341 (1986), oxidation processes of Si have been reported, where silicon is exposed to an alkali metal and thereupon exposed to oxygen at room temperature. As a last step, the silicon substrate is heated to 650° C. in order to form a silicon oxide and for desorption of Cs. In the latter article, an oxide layer with a thickness of about 1 nm is achieved and the thickness is claimed to be dependent on the oxygen exposure and the alkali metal coverage.
[0012] Though an indication is given in these articles for how thick an oxide layer is achieved with these methods with a particular choice of parameters, it is not directly derivable how any other specific thickness of the oxide layer can be reached. The reason lies in the fact that no simple scaling can be demonstrated in these methods between the thickness of the oxide layer and the other parameters such as total oxygen exposure and total alkali metal coverage of the silicon surface.
[0013] As is apparent from the discussion above, a great number of experiments have been performed in order to find a method for production of oxide layers with any well-defined thickness, where the thickness can be varied in a controlled way from one layer to any higher, predetermined value. However, this problem has not yet been solved satisfactorily for any of the methods mentioned above.
[0014] It is the purpose of this invention to provide a method for the controlled and scaleable oxidation of silicon where the thickness of the oxide layer can attain any chosen value between one monolayer and some tens of nanometers and with high precision.
[0015] This purpose is achieved by a method for oxidation of a silicon substrate under ultrahigh vacuum base conditions, wherein said substrate undergoes at least one oxidation cycle and heat treatment for transforming the adsorbed oxygen into silicon oxide, wherein said oxidation cycle is repeated for a predetermined number of times.
[0016] According to the invention, a silicon substrate is exposed to oxygen gas under ultrahigh vacuum conditions but with a raised partial pressure in the chamber of typically 10−5 Pa of pure oxygen. During this step, oxygen is adsorbed on the surface, where the adsorption rate of the oxygen is independent of the temperature if it is below 150° C. It is an obvious convenience to be able to expose the surface of the substrate to oxygen near room temperature. Thus at room temperature or likewise in a temperature regime between −100° C. and 150° C., the total amount of adsorbed oxygen is only very weakly dependent on the oxygen exposure conditions for total exposure values above 100 Langmuir (L), where 1 L=10−6 Torr·s=1.33·10−4 (N/m2)·s. A higher oxygen exposure does not result in a substantially higher amount of adsorbed oxygen on the surface even for exposures of thousands of L. Therefore, it is possible to achieve a chemical adsorption of oxygen on the surface of the substrate with a narrowly defined amount of adsorbed oxygen atoms filling all available surface sites. In this way, the total amount of oxygen retained on the substrate after evacuation of the chamber, does not depend critically on temperature or oxygen pressure and is, therefore, easily reproducible.
[0017] After such an exposure to oxygen, leaving a well defined amount of oxygen atoms bound in the surface, the silicon substrate is treated by heating under vacuum conditions of a pressure less than 10−6 Pa, preferably less than 10−7 Pa, to a temperature of between 500° and 815° C. depending on the desired conditions and explained in more detail below. An annealing time of between 30 and 60 seconds at this temperature is typically sufficient. At these temperatures and times, all the adsorbed oxygen atoms transform into silicon oxide, SiO2, covering only part of the surface, as no further oxygen is supplied in the heating process. In order to increase the amount of oxide on the substrate, the process is repeated.
[0018] In a certain embodiment of the invent ion, a thin but fully covering oxide layer is achieved by exposing the clean silicon surface of a substrate to oxygen in a number of oxidation cycles, where each cycle is followed by heating to a temperature of 550° C. An annealing time of between half a minute and one minute is typically sufficient. At these temperatures and times, the initially adsorbed oxygen atoms, which are bound in the surface of the substrate, are in the first annealing step transformed into silicon oxide clusters covering only part of the surface, as no further oxygen is supplied in the heating process. In order to increase the oxide island coverage, the process is repeated three to four times, which is as many times as additional oxygen can be adsorbed at the surface and converted into oxide upon heating. Hereafter, the system has become inert to further adsorption of oxygen, and a stable oxide layer, which is the thinnest possible oxide layer that can exist on silicon, has been created.
[0019] The mono-molecular layer of silicon oxide created with this method has been thoroughly studied and characterised to ensure that its physical and chemical properties are satisfactory for deployment in actual electronic components, in view of the fact that it must differ from a truly bulk-like system.
[0020] A further embodiment of the invention can be used for the growth of thicker oxide layers. In this case, the oxidation cycle comprises deposit of an alkali metal, preferably Cs, for example by evaporation from a SAES dispenser, on the substrate prior to exposure to oxygen. As is well known, a thin layer of Cs, preferably a monolayer, on the silicon surface enhances the uptake of oxygen on this surface. Therefore, as a second step, the substrate with the Cs surface is exposed to oxygen for saturated oxygen adsorption.
[0021] After exposure to oxygen, the adsorbed dose of oxygen is converted into silicon oxide by a heat treatment of the sample, at above 550° C. but below 700° C., for a period of a half up to one minute, in an oxygen free high vacuum environment. During this heat treatment, all traces of Cs disappear from the surface.
[0022] To overcome the barrier for further adsorption of oxygen on the now already oxidised surface, a layer of Cs atoms is deposited on top of the oxide using a similar dosing time and conditions as for covering the clean silicon surface.
[0023] Oxidation cycles of Cs deposition and oxygen exposure followed by heating is repeated for a number of times. During heating after each oxidation, Cs is released from the substrate. In this procedure, the oxide layer grows approximately linearly in thickness for the first five cycles, after which the growth slows down, and ultimately a thickness of approximately 3 layers of oxide can be reached, with the upper part bulk like.
[0024] No difference of the finally achieved oxide layer thickness was observed, whether Cs in the first cycle was deposited on a clean silicon surface or Cs was deposited on a silicon surface that had first been exposed to oxygen prior to Cs deposition.
[0025] In a still further embodiment of the invention, still thicker silicon oxide layers can be achieved with no saturation of the growth process and still with maximum control as will be described in the following. To accommodate more oxygen as adsorbed species prior to oxidation by heating, several oxidation cycles with alternating Cs- and oxygen deposit at or near room temperature may be used to produce a growing film of a mixed species of these two elements. After a number of such completed cycles, heating to between 500° C. and 815° C., typically for periods of a half to one minute, serves to create a layer of silicon dioxide on top of silicon and to desorb Cs. The resulting silicon oxide thickness is linearly depending on the number of oxidation cycles.
[0026] As an alternative to Cs, also Na, K, and Rb may be used to enhance oxygen uptake on a silicon substrate.
[0027] The invention will be explained more in detail in the following with reference to the drawings, where
[0028]FIG. 1 shows experimental spectroscopic results in the form of integrated O 1s XPS signals during the oxidation process of Si(111) and Si(0001) according to the First Recipe,
[0029]FIG. 2 shows determined oxide layer thickness and chemical composition, for the oxidation process of Si(111) and Si(001) according to the First Recipe,
[0030]FIG. 3 shows determined oxide layer thickness and chemical composition, when the oxidation method involves Cs deposition, for Si(111) and Si(0001) according to the Second Recipe,
[0031]FIG. 4 shows the O 1s XPS spectrum for the oxidation method involving Cs deposition on the Si(111) substrate according to the Second Recipe,
[0032]FIG. 5 shows Si 2p XPS spectra describing the quantity of silicon oxide on the sample after various exposure cycles according to the Third Recipe,
[0033]FIG. 6 shows a diagram of the thickness of the Sio2 film as a function of number of exposure cycles according to the Third Recipe,
[0034]FIG. 7 shows Cs 3d XPS spectra describing the quantity of Cs left in the oxide after processing by using 15 cycles of exposure according to the Third Recipe and after heating up to different temperatures for a minute,
[0035]FIG. 8 shows the Cs 3d XPS signal intensity (area) for extended heating times in minutes at 580° C. of a sample created with 15 cycles of exposure according to the Third Recipe, and
[0036]FIG. 9 shows photoemission spectra, recorded with synchrotron radiation of 130 eV photon energy, of the clean surface and the surface covered by an oxide with a thickness of 6.4 nm according to the Third Recipe.
[0037] In the following, a number of experiments will be described, which have been performed in order to demonstrate the growth of oxide layers on silicon in a controlled way with a specified thickness.
[0038] For preparation of the substrate, a standard procedure was used as a cleaning process of polished single crystal silicon wafers, which in the experiments were of n-type with a resistivity of 5 ohm-cm and oriented in (111) or (001) directions. However, crystals with other resistivities and orientations can be used as well.
[0039] The substrates were flash heated to 1000° C. a number of times, after which the surfaces were clean and reconstructed in the known structures as could be monitored with LEED (Low Energy Electron Diffraction), Photoemission, and Optical Second Harmonic Generation Spectroscopy.
[0040] In order to produce a silicon oxide layer on the silicon substrate, where the oxide layer has a thickness nominally equivalent to 1 molecular layer, a method is applied, which in short notation can be illustrated as: Si+O+heat+O+heat.
[0041] Having the cleaned silicon substrate at room temperature in an evacuated chamber at a pressure around 10−6 Pa, oxygen gas was supplied to the chamber corresponding to exposure of the clean surface to 100 L oxygen. During this step, oxygen is adsorbed on the silicon surface but does not form a"real" oxide layer. Instead, it forms a saturated chemically adsorbed layer of atomic oxygen imbedded in the surface.
[0042] Subsequently, the chamber was evacuated for oxygen and the surface, with the adsorbed oxygen, was annealed at a temperature of 550° C. for 60 seconds. After this, the cycle of oxygen exposure followed by heating was repeated three times, at 550° C. for 60 seconds, and up to 700° C. in the last step.
[0043] After each step, spectroscopic measurements were performed with synchrotron radiation and the resulting photoemission spectra were used to characterise the system, which is described in more detail in P. Morgen et al. "Formation of the thinnest possible oxides on silicon", submitted to Phys. Rev. Letters in March, 2001.
[0044] From these measurements, the intensity (peak area) of the spectroscopic signal from the 1s electronic level in oxygen, which is shown in FIG. 1, reflects the amount of oxygen bound on and in the silicon substrate. Step 1 represents the cleaned silicon surface. Steps 2, 4, and 6 represent identical steps with exposure to oxygen, while steps 3, 5, 7 represent heating at 550° C. To check whether a higher oxygen uptake would be possible with a higher dose and a higher temperature, the oxygen dose was chosen to be higher (300 L) in step 8, and the temperature was chosen higher, namely 700° C., in step 9. However, the uptake of oxygen was not increased despite the higher oxygen dose and higher temperature.
[0045] From the curve in FIG. 1a, for Si(111), it is apparent, that the oxygen uptake almost saturates after three cycles (step 7). The saturation after a few cycles is in contrast to oxidation as typically performed at high temperatures, where additional oxygen is normally available and therefore leads to the continuous formation of more oxide. The formation of a precise thickness of oxide at these high temperatures, however, is difficult to control and reproduce, involving a complicated temperature and oxygen pressure sequence.
[0046] For oxygen uptake on Si(001), a curve corresponding to Si(111) is also shown in FIG. 1b.
[0047] Studying the attenuation of signals from deeper atomic layers, and the variable chemical composition, the thickness of the silicon oxide layer and the chemical composition in the oxide layer can be determined, which is shown in FIG. 2a for Si(111) and in FIG. 2b for Si(001). The oxide layer thickness and chemical composition may be read from the figure to represent less than a full layer of stoichiometric silicon dioxide (but with a total thickness slightly above a molecular layer as defined above to have a thickness of 0.24 nm).
[0048] The large up-and-down variations in these curves are due to the large relative changes between mere adsorption, heating to stabilise and contract the oxide and additional adsorption, and testify to the large difference between the adsorbed and oxidised state of oxygen in the surfaces. The different curves in FIG. 2 have been obtained by differentiation between measured signals using the assumption that 3 oxygen atoms in the surface surround silicon atoms, that 1 or 2 oxygen atoms in the interface surround them, and that in a truly bulk-like oxide layer they should be surrounded by 4 oxygen atoms.
[0049] For the Si(111) surface, the largest fraction of silicon atoms are found in the interface region, while for Si(001), the structures contain more bulk like oxide for equivalent processing steps.
[0050] As can be seen in FIG. 1, the initial steps for both surfaces show that after initial adsorption and saturation of the surface with oxygen, the first couple of heating cycles make room for more oxygen to be adsorbed on the surface. This is due to the clustering of oxide. These clusters finally coalesce to cover the surface uniformly.
[0051] The physical meaning of a layer, like the ones produced here, and the thickness values may be less obvious than for correspondingly thicker layers. However, a test experiment with a metal (Ag) layer deposited on top proved the oxide layer to be continuous and isolating without holes and that tunnelling did not discharge it. It is therefore directly applicable in electronic devices.
[0052] A general aim is to keep the interface region as thin and smooth as possible in order to create as few defects as possible and, consequently—in an actual MOS transistor—produce the lowest scattering of inversion layer electrons or holes.
[0053] This process creates the thinnest possible usable oxide coverage on a silicon surface, which is around 0.3 nm thickness as also can be read from the figure by addition of the three curves. It has the further advantage of having a high degree of latitude, where the so-called latitude is a well known term meaning independence of the final result from variations of the parameters. This has been demonstrated by varying the temperature during oxygen exposure between −100° C. and 150° C. and the oxygen dose between 100 L and 500 L with an annealing temperature of between 500° C. and 700° C.
[0054] In a very detailed study, it was found that the interface structure and the distribution of variably oxidised silicon atoms through the thin oxide phase were clearly different for two silicon surface orientations, the Si(111) and Si(001) faces. In both cases the structure was also different from those of thicker oxides, but with dielectric properties proper for the actual use in devices.
[0055] In order to produce a thicker silicon oxide layer on the silicon substrate, with more bulk-like properties than for the first recipe, a second method is applied, which is short notation can be illustrated as: Si+Cs+O+heat+Cs+O+heat . . . or, alternatively, Si+O+Cs+O+heat+Cs+O+heat. . . .
[0056] In this case, Cs was deposited on a clean silicon surface from a SAES™ alkali dispenser source. However, the man skilled in the art may use a different dispenser source if appropriate. The amount of Cs covering silicon was chosen to be approximately a monolayer. On the clean silicon surface, a single layer of Cs may be deposited with ease, but not any more layers above that, as further deposition reevaporates Cs due to its high vapour pressure.
[0057] In an alternative experiment, the clean silicon surface was first exposed to 100 L oxygen before exposure to Cs. No significant difference was experienced between the two experiments regarding the final oxide layer thickness. However, a difference was experienced in the kinetics and the path of Cs adsorption on the substrate.
[0058] After exposure to 100 L oxygen, the sample was annealed between 550° C. and 700° C., typically for around 60 seconds, whereby Cs desorbs and oxide forms.
[0059] In subsequent oxidation cycles, a new monolayer of Cs was deposited on the substrate surface prior to exposure to 100 L oxygen. The sample was then heated but to a higher temperature after each oxidation cycle. As more oxide was added, a gradual increase in the annealing temperature and times was administered, tested against the decomposition of the oxide, and resulting in a "better" oxide structure, with fewer defects. In the last cycle a temperature of 700° C. was used.
[0060] From spectroscopic measurements, described in more detail in P.Morgen et al."New methods for the growth of thin oxides on the Si(111) and Si(001) surfaces" submitted to Phys. Rev.B, March 2001, the resulting thickness and chemical compositions have been analysed as shown in FIG. 3. As shown in FIG. 1, step 1 represents the clean silicon surface; step 2 represents oxygen deposition; step 3 represents heating; step 4, 5, 6 and 7 represent a full oxidation cycle with Cs deposition and oxygen exposure followed by annealing. In this case, it was chosen to oxidise the substrate without prior Cs deposition. However, Cs deposition prior to the first oxygen exposure would lead to an equivalent final oxide layer.
[0061] From FIG. 3, it is apparent that the oxygen uptake happens in very regular ways for both surfaces, but that the chemical compositions are different. For both surfaces some genuine oxide (silicon bound to four oxygen atoms) is found, and this layer grows linearly with number of cycles. The rather drastic oscillations of the intensities reflect the difference in density and structure of the system after oxygen adsorption and annealing stabilising the oxide.
[0062] However, the total amount of oxygen bound in the system tends towards saturation after a few more cycles, yielding a total maximum obtainable oxide thickness of around 0.75 nm for Si(111) and Si(001), or about three molecular layers.
[0063] It is an advantage, if the oxygen dose on the Cs surface is slightly higher than the dose used to saturate the clean silicon surface, i.e. larger than 100L, but no strict control is required. For the best repeatability, the doses of Cs and oxygen in all subsequent steps should be set slightly larger than the doses used in the first steps.
[0064] In order to produce a silicon oxide layer on the silicon substrate, where the oxide layer has any desired thickness between 0.4 nm and about 30 nm, with a desired repeatability, a method is applied, which in short notation can be illustrated as Si+O+Cs+O+Cs+O . . . +heat or,alternatively,Si+Cs+O+Cs+O . . . +heat.
[0065] Though this method works well for thicknesses larger than 10 nm, different and eventually more preferable methods exists for the production of layers with a thickness larger than 10 nm.
[0066] According to this embodiment of the invention, a clean silicon surface is exposed to Cs followed by exposure oxygen between 100 L and 300 L, preferably 100 L, at temperatures between −100° C. and 150° C., but preferably at room temperature. This oxidation cycle is repeated a number of times resulting in a growing film of Cs and oxygen.
[0067] In a final step, the substrate is heated to a temperature in the range from 550° C. to 815° C. for desorption of Cs and for oxidation of the silicon with the adsorbed oxygen. The temperature is chosen high enough for the Cs to desorb, but not higher than 815° C., where oxygen, which in this case is not yet bound as an oxide, may be released from the surface of the substrate. A temperature slightly below 815° C., for example 800° C. is advisable.
[0068]FIG. 4 illustrates spectroscopic signals from the Is electronic level of oxygen as obtained by XPS (X-ray Photoelectron Spectroscopy) from the Si(111) substrate after heating of the substrate with the final Cs/O film. The number of cycles used for deposition of the Cs/O film before heating is indicated for each spectrum. As the amount of oxygen increases, it is seen that the peak increases correspondingly in height. Furthermore, the peak moves towards higher binding energies. This fact is well known from the literature as indicating that the system gradually becomes more stable and well co-ordinated.
[0069]FIG. 5 illustrates the Si 2p XPS spectra for all oxidations in the series. The signal contains contributions from bulk silicon as well as from the oxide. It is seen that, as the number of cycles is increased, the Si 2p bulk signal is attenuated while the signal representing oxidised silicon increases. The actual difference in peak position of approximately 4.5 eV between bulk and oxidised silicon atom 2p levels also indicates that the result is a homogenous, high quality oxide. The Si 2p spectra distinguishing the oxidised and un-oxidised proportions of silicon atoms, as seen with photoemission, are used to calculate the oxide thickness dox. Taking the lowering of the intensity of the peak representing the un-oxidized Si atoms into account, the oxide thickness can be expressed as:
d ox=sin(θ)λox 1n(I0 /I),
[0070] where θ is the angle between the surface plane and the analyser entrance (here θ=90°), λox is the electron mean free path in the oxide film (here: 3.5 nm), and I0 and I are un-oxidized Si 2p peak intensities (peak areas) of the clean surface and the surface covered by the oxide film, respectively.
[0071] For each measured point of the series, the thickness has been calculated by the equation given above. These thickness values are displayed in FIG. 6 as a function of number of oxidation cycles including Cs deposition before final heat treatment. This figure illustrates that it is possible according to the invention to produce oxides with a any thickness within the range of 0.4 nm and 5 nm, where the thickness depends linearly on the number of exposed cycles. The error bars indicate the total estimated systematic and statistical uncertainties, which can be kept constant for the present experimental conditions. Further experiments have shown that the method according to the invention is scaleable up to thicknesses of more than 10 nm oxide.
[0072]FIG. 7 shows the Cs 3d XPS signal intensity (area) for extended heating times in minutes at 580° C. of a sample created with 15 oxidation cycles. It is obvious from the figure that Cs desorbs also at relatively low annealing temperature like in this case at 580° C.
[0073] To illustrates the desorption efficiency of caesium at different temperatures, Cs 3d XPS spectra have been recorded after heating for 1 minute at various temperatures in the range 600-815° C. These spectra are shown in FIG. 8, where the different heating temperatures are indicated for the different spectra. Caesium is desorbed to a higher degree as the annealing temperature is increased, which is reflected by the decreasing peak signals. It is seen that Cs has almost disappeared at 815° C.
[0074] Other experiments have shown caesium to disappear completely for longer or for repeated heating cycles at 815° C. Thus, to ensure a complete Cs desorption, eventually several heating cycles or a longer annealing time may be employed.
[0075] The experiment thus demonstrates that it is possible to produce oxide of the desired thickness and with an extremely high degree of repeatability and at the same time remove the alkali used to enhance the adsorption.
[0076]FIG. 9 shows the surface sensitive photoelectron Si 2p spectra of the clean silicon crystal (lower curve), and an oxide made by the method described above and with a determined thickness of 6.4 nm (upper curve). As expected, it indicates the presence of a homogeneous oxide within the probing depth, since there is only a weak indication of intermediary oxide present compared to the dominant signal from fully oxidised silicon, SiO2. Also, the relative chemical shift of approximately 4.5 eV of the peak corresponding to the silicon oxide as compared to the peak corresponding to bulk silicon, indicates that the oxide is of high quality, i.e. is homogenous and without islands or holes.
[0077] The method used to measure substrate temperatures above 450° C. in all the processes makes use of a calibrated spot photometer. This allows the temperature to be measured without contacting the substrate. The photometer was adjusted for silicon emissivity and for absorption in the windows of the ultrahigh vacuum chamber. Lower substrate temperatures were measured with a thermocouple in contact with the substrate holder.
Referenced by
Legal Events
Original Image

subset: commoncrawl


text:
Richland, WAUSA
Hometown: Walla Walla
September 26, 2012
The nerdy kind
Almost never
Thats what I am told.
Continuous Integration and Scala. But honestly, I probably need more help...
C++, Java, Verilog, VHDL
Computer engineer at heart, Software engineer by day. Wanting to bridge the gap between the web and hardware design.
Meetup members, Log in
By clicking "Sign up" or "Sign up using Facebook", you confirm that you accept our Terms of Service & Privacy Policy


text:
The first challenge Sylvia Mathews Burwell may face as the nation's top health official could come from the insurance industry.
Magic Johnson, who is living proof of the value of early medical detection with health insurance, is broadcasting that message on behalf of Obamacare.
Barack Obama wanted to change American health care as we know it. And he is, in ways that go far beyond the goals of the Affordable Care Act.
President Barack Obama gave a potential one-year reprieve to Americans facing cancellation of their health plans as the insurance industry warned the action may lead to higher premiums.
During the day, Jeffrey Zients drives around Washington's Beltway, overseeing the private contractors and government officials racing to fix the flawed Obamacare website.
The Obamacare rollout is leading to the cancellation of hundreds of thousands of health insurance plans nationwide, contradicting President Barack Obama's repeated pledge that people who like their coverage can keep it.
"There's confusion today because the world generally was not expecting it."
- Robert Laszewski on Jul 23, 2014
Laszewski Says Insurers Ready for Obamacare


text:
1966 Pontiac GTO Tri-Power with PHS documentation. The car was painted approximately ten years ago. The odometer shows 20000 miles but we believe the... More
1965 GTO 4speed in excellent restored condition, Tons of receipts , PHS documentation, just rebuilt 400 cu in motor ,NOM , Desirable MuscLe car , www.ABclassiccars.com , ... More
Restored 1968 Pontiac GTO with a numbers matching 400 cubic inch engine and a 4 bbl carburetor mated to a Turbo Hydra-Matic transmission. We... More
1964 Pontiac GTO VIN 824P252257 This beautiful GTO was in North Carolina before coming to Michigan. The restoration was started in 2000. We have... More
This 1969 Pontiac GTO Coupe features a 400 V-8 8cyl Gasoline engine. It is equipped with a 3 Speed Automatic transmission. The vehicle is... More
Immaculate 1969 GTO Judge w/ 428 CI V-8, Muncie 4-speed. Complete Frame Off, Nut/Bolt Restoration... More
Call 440-914-0000 or email [contact seller] 1966 Pontiac GTO SURVIVOR CAR with only 20,500 original miles! Factory white on white! One... More
1970 PONTIAC GTO JUDGEExotic Classics is pleased to present this 1970 Pontiac GTO Judge, one of the rarest and most potent Pontiac muscle-cars that... More
NEW TO LRAAUTO SALES THIS 1966 PONTIAC GTO. THIS IS A COMPLETE FRAME OFF RESTORATION THAT IS ABSOLUTLEY STUNNING FROM TOP TO BOTTOM. THIS IS... More
Early GTOs are red hot among Pontiac fans and owning one with a top that goes down is always as safe as the gold... More
For sale in our Tampa showroom is an numbers matching 1965 Pontiac GTO. This little GTO shes really lookin fine. With three deuces and... More
PHS DOCUMENTED REAL 4 SPEED GTO. FROM A PONTIAC ENTHUSIAST I HAVE KNOWN FOR A LONG TIME. THIS CAR HAS A FLAWLESS PAINT JOB... More
34,054 ACTUAL MILES. DOCUMENTED REAL JUDGE WITH #S MATCH THROUGHOUT, ORIGINAL METAL. 3 OWNERS & THEY ALL KNOW EACH OTHER. THE CAR REMAINED IN... More
1971 Pontiac GTO 455 Convertible! This car is a rarity and in great condition for the age! The car is 1 of 43 1971... More
1970 PONTIAC GTO HARDTOP COUPE, Baja Gold Exterior with Saddle Interior. This is a matching number car. The car features the original 350 horse,... More


text:
The crude oil correlated currency Loonie is strengthening against the USD and printings new daily lows. At the moment, the USD/CAD is quoting at 1.0085.
Jan-19 low at 1.0070 is the next support level as the pair approaches parity.
Monitor the markets with our customizable FX studies.
Live economic events calendar


text:
Leaf spot on swiss chard
gaetanol(z6NY)August 11, 2007
I have what I believe is a case of leaf spot on my swiss chard. Anything I can do to prevent it from spreading to new leaves? Anyone tried any successful organic methods to control it?
Thanks in advance
There are, apparently, a couple of fungi that cause leaf spot on Swiss Chard, neither of which I have seen here, yet. A couple of common sprays for fungi are 1 teaspoon of baking soda in 1 quart of water, or a 50/50 mixture of fat free milk and water, sprayed every 5 to 7 days. How effective these would be for this I can't say.


text:
- Shop
- Support
- Learn
- Explore
- Exhibitions
- Collections
- Library
- Cultural Communities
- Connect
- Collaborate
- Genealogy
- Digital Scholarship
- Calendar
- Programs
- 25th Annual Sailors' Series
- Lifelong Learning Lecture Series
- Where the Land Meets the Sea
- Watkins Bioacoustics Symposium
- Nautical Antiques Show
- 27th Annual Scrimshaw Weekend
- Painting with a Splash FOR KIDS
- Right Whale Day
- April Vacation Week
- A Grateful Dead Yoga Experience
- Portuguese Theatrical Performance
- Over the Top Summer Gala
- Members' Trip to Porto, Portugal
- Family Activities
- Community Programs
- Annual Events
- Moby-Dick Marathon
- Past Programs
- Visit
Family Activities
Special programs are available throughout the year for children. Visit the Museum during February or April Vacation Week for full days of activities. Right Whale Day celebrates a highly endangered species and raises awareness of the challenges these animals face in increasing their population. Join Abraham Lincoln, George Washington and Teddy Roosevelt to celebrate Presidents' Day and enjoy cake, crafts and a scavenger hunt!
April Vacation Week
Participate in a highlights tour, go below deck on the world's largest model whaleship, learn to throw a harpoon, create your own scrimshaw and more!
Summer Family Fun
Daily hands-on activities and Family Fun Highlights Tours during the months of July and August.
Melville Family Day
Herman Melville's birthday is celebrated every year in the summer with free crafts, activities, and birthday cake.
Presidents' Day & February Vacation
Presidents' Day kicks off February vacation programs at the Whaling Museum.


text:
Take out exploit effect, make ground combat 100% less tedious.
View Single Post
Archived Post
Lt. Commander
Join Date: Dec 2007
Posts: 120
# 5
"I think the general consensus around here, and definitely within my fleet, is that ground combat is UNBEARABLY mind numbing, boring, tedious, and not fun. Oh, and ridiculously easy. I know for me it's nothing but incessantly mashing on buttons waiting for the enemy to die, "
- I agree though I spend my time mashing buttons trying to NOT die myself while making the NPC's die, PvP side I don't get chance to mash buttons as i'm usually killed by an expose / exploit combo within two seconds of entering a room dealt by someone or a group that I knew was in the room but couldn't target fast enough due to the clunky camera and ground motion controls.
Get rid of exploit and just make it so that EVERY attack deals heavy damage to exposed enemies. All weapons with expose attacks will stay the same, and all weapons with exploit attacks would be changed to expose attacks. That way every secondary attack will have a chance to expose. Attacks on exposed enemies would deal not as much damage as an exploit would do now, but still, a nice big boost.
- Good idea. It would definately make things more interesting for people who aren't that great on the ground, though I can see alot of the elite dirtside PvP junkies complaining because they can no longer solo kill someone in about 2-3 seconds.
1. Removes the brain-dead binary nature of ground combat.
It's not "strategy"
and don't try to tell me it is.
- the red part I kind agree with, there isn't much stratagy used on the ground.
2. Makes ground combat go by a lot faster.
- not so sure about this one unless you reduce their health and shileding
3. Eliminates the annoyance of having to hopelessly watch your exposed enemy recover before your exploit attack recharges.
- personally I don't find that annoying, I do find it annoying to be killed repeatedly without much chance to fight back though
4. Limits the dependence on away team A.I. to intelligently set up and use exploit/expose combos.
- you mean they actually try and do it? I've never seen that happen, I just give them all expose weapons and carry the exploit guns myself for PvE.
5. It makes sense. An exposed enemy would take extra damage from pretty much any attack one would think.
- I agree with this one, if you're exposed you're far more likely to get hit IRL.
6. We all know this game is about ship combat. Might as well make the ground combat go by quicker.
- Not necessarily but i would like ground combat to be a more engaging.
7. Reduce the spawn sizes. Srsly, I'm taking out like 150 dudes every time I step foot on a planet. That doesn't feel right in the ST universe, and it severely adds to the tedium the combat already presents. You don't earn JACK for skill points on ground missions anyway, so who cares if you cut the number of mobs in half?
- it's crazy that your 5 person team should be expected to take on more than twice their number and survive with NO ill effects
I've previously mentioned that
a vast reduction in enemy
and player HP
would make the ground combat a lot more fun as well. I still stand by that suggestion today. I literally lose ALL interest in the game as soon as I have my bridge officer tell me we need to beam down to the planet. If the ground combat was bad but still exciting in some way, I wouldn't mind. However, not only is it bad, but it's a total buzz kill. NEEDS SERIOUS OVERHAULIN' "
- I agree with the red bit but not with the green bit. In PvP people can be killed rediculously fast though a SLIGHT reduction in player HP wouldn't be too bad and might soften the blow for the PvP'ers of having no way to kill you almost instantly.


text:
Revere Collection by Hinkley
For a rustic yet sophisticated look, try lamps from the Revere Collection by Hinkley. These outdoor lights will brighten garden paths, give light to a patio, or simply decorate the surroundings. Spend summer days outdoors enjoying light from sconces or lamp posts. Each lamp comes in a seedy finish and features clear seedy glass shades.
Hinkley Lighting - Revere Large Outdoor Wall SconcePrice From: $479.00 - $499.00
Hinkley Lighting - Revere Medium Outdoor Wall Sconce$399.00
Hinkley Lighting - Revere Outdoor Post LightPrice From: $369.00 - $379.00
Hinkley Lighting - Revere Small Outdoor Wall Sconce$239.00 - $249.00


text:
TruKid All Natural Cool Conditioner
We know you want the goods as soon as possible, which is why orders received by 3pm ET leave our warehouse the very same day. We'll send you an email that day to confirm shipment and the email will include your tracking information.
Our warehouse is closed Saturday & Sunday, so orders received after 3pm ET on Fridays will not ship out until Monday.
Based on 1 Review
LisaCAGreatLove this...two little boys who are over the baby stuff....looks great, worked great, smells great! LOVE IT1 out of 1 shoppers thought this review was helpful.
Was this post helpful?YesNoposted May 21, 2012Link to this post
Use this link to send this review via e-mail, Twitter, or to post to your blog.Close
Write Your Own Review
Have you tried this product? Help out by sharing what worked (or didn't)!Write a Review
Fairy Tales Curly-Q Natural Curl Maker is a non-sticky pliable gel that enhances and defines curls for kids of all ages.Old Price:
$12.95New Price:51% OFF
Babo Botanicals Oatmilk Calendula Lotion is a natural moisturizing baby lotion for mild and sensitive skin!Old Price:
$14.50New Price:50% OFF
TruKid All Natural Dancing Hair Detangler is was formulated for kids, free of all natural, and free of parabens, SLS, BPA & phthalates, gluten, and 1-4 Dioxane!New Price:


text:
Deluxe Packable Shelves
Packing and unpacking has never been easier! Simply hang the mesh shelves in your wardrobe or over the back of a door, place your clothes, shoes and toiletry kit on the shelves and then lower them all into your suitcase. Then when you arrive at your destination, lift out the shelves and hang them up, leaving your clothes organised and ready to wear. Lower shelf compartment is zipped. Fits most carry-on size suitcases.
Cat Ref: SKU 24330
Open 44 x 29 x 55cm H. not incl. handles (17¼" x 11½" x 21¾").
The Deluxe Packable Shelves product has been discontinued.
Customer Reviews - Deluxe Packable Shelves
Writing reviews for this product has been disabled
You may also like:
Can we also suggest
- OXO Good Grips Roll Out Bin
- £14.99
- 3 Packing Squares
- £12.99
- GoTubb Small
- £5.59
- Lékué Silicone Bread Maker
- £19.99


text:
Best Jazz Band (2004)
No doubt about it: A good jazz guy is hard to find. The music of Diz and Bird and Miles and Mingus doesn't play as well in the subtropics as it does in some other parts of America. Jimmy Buffett is, unfortunately, more our speed. But Paul LeGrande, Rich Caruso, and Jim Chapek, who perform Friday and Saturday each week at Luce restaurant in downtown Hollywood (954-920-2500), riff in a style reminiscent of the giants of the genre. Caruso, who lives in Fort Lauderdale, has played with everyone from Luciano Pavarotti to Lionel Hampton. Chapek, of North Miami-Dade, has beat the skins with Chet Baker and Wynton Marsalis. Of course, the 2-year-old trio, which has a jones for the music, doesn't do covers. It comes up with a lot of original music and won't play anything else, says LeGrande, who lives in Hollywood and wields the bass violin and electric bass. "When someone comes in and asks, 'Will you do something by Miles Davis?' we say, no, but we'll do something with the same notes," he explains.
More Arts & Entertainment Awards
Best Stage DirectorRobert Hooker for Stop Kiss
Best Stage ProductionPermanent Collection
Best Radio ShowWLRN-FM (91.3) Sounds of the Caribbean
Best Concert of the Past 12 MonthsAntibalas Afrobeat Orchestra, the Culture Room, Monday, April 28, 2003


text:
Move Your TUX
Hello world,
I'm starting a crazy challenge and need your help !
Here is the very simple idea:
I bought a small Tux (about 12 or 15cm height) that everybody can easily carry with him The goal is to make this Tux travelling around the world from hand to hand and make it end on Linus Torvalds' desk.
Why should we do that ? As a thanks, and to show the world that Linux is not only a chain of codes but also a human community.
How Tux travels:
1- Through the dedicated website, you make contact with an other voluntary
2- It doesn't matter if Tux is going 1km or 100, it just have to move, and if it is blocked somewhere, it can just go back and take an other way in others hands.
3- To ensure we are moving Tux, we will have a password system:
The first one choose a «password», this password must change every third person who have Tux. The one who must change the password have to contact one of the webmaster to define a new password and will have to give the old one, which he will have received with Tux.
The passwords will be only free software names.
4- Each one who had Tux takes a picture of him with it. And indicate to the webmasters where, and when he gave Tux to someone else. And of course gives the picture so we can all see Tux, as we will all miss it...
We need for that project :
1- (OK) - The Tux (we got it) and a gnu.
2- (OK) - Somewhere to host the website, the website, and some webmasters to do it.
3- (OK) - Some translators to show every one in his language, the informations about when is Tux.
4- A map updated with the Tux travel (OK, it's in process now)
5- (OK) - Define the end point for Tux and Gnu (the desk of the boss : LT & RMS)
Torvalds :
He is living in Beaverton, Oregon, US with his wife and his three daughters. He is working fr the Open Source Development Lab, which is financed by some company sailing Linux.
Thanks by advance to all who will be part of the Tux's trip.
We now need someone for the point 4 !
The Tux's Trip website will be here :
and the Gnu website here :
(in construction for now)
News of the project
Hello, Some news of the project!!!
Tux start his trip one year ago and Gnu 18 days after.
Today Tux and Gnu traveled 30 182 Km (18754 Miles).
They cross 3 continents thanks to 46 relays.
Today Tux is in Beijing -CHINA- and Gnu is in Montréal -CANADA-
To follow...
The adresse of the site: http://www.move-your-tux.fr/
Details of Tux's travel: http://www.move-your-tux.fr/forum/viewtopic.php?id=166
For Gnu: http://www.move-your-tux.fr/forum/viewtopic.php?id=167
We are looking for relays in America, South America and Africa.
Tools and Technologies for Scale and Reliability
by Linux Journal Editor Bill Childers
Sponsored by IBM
Scheduling Crontabs With an Enterprise Scheduler
11am CDT, April 29th
Moderated by Linux Journal Contributor Mike Diehl
Sponsored by Skybot
Trending Topics
Webinar: 8 Signs You're Beyond Cron
11am CDT, April 29th
Join Linux Journal and Pat Cameron, Director of Automation Technology at HelpSystems, as they discuss the eight primary advantages of moving beyond cron job scheduling. In this webinar, you'll learn about integrating cron with an enterprise scheduler.Join us!
|March 2015 Issue of Linux Journal: High-Performance Computing
|Apr 01, 2015
|April 2015 Video Preview
|Apr 01, 2015
|Not So Dynamic Updates
|Mar 30, 2015
|Users, Permissions and Multitenant Sites
|Mar 26, 2015
|New Products
|Mar 24, 2015
|Flexible Access Control with Squid Proxy
|Mar 23, 2015
- March 2015 Issue of Linux Journal: High-Performance Computing
- New Products
- Not So Dynamic Updates
- Users, Permissions and Multitenant Sites
- Flexible Access Control with Squid Proxy
- Security in Three Ds: Detect, Decide and Deny
- April 2015 Video Preview
- Tighten Up SSH
- DevOps: Everything You Need to Know
- Non-Linux FOSS: MenuMeters


text:
Lemkesoft has released GraphicConverter 8.5.3, featuring a mix of new additions and welcome bug fixes. The update adds the option to geotag images from the map view (which also adds a search field), a new Copy EXIF Tags to IPTC Caption feature (as well as an option to open a separate IPTC window in the browser), batch support for image catalog creation, and an option for defining overlap printing width. In the user interface department, the update adds a command that enables you to move your cursor left or right without invoking the command for image change, and lets you use the default display behavior for zooming or scaling after an image change. The release also fixes a bug that affected the import of uncompressed PSD files (a glitch that bedeviled one TidBITS staffer), a problem with GIF loop detection, a possible memory leak in image-to-QuickTime conversion, and an issue with renaming files in the browser that switched names from lowercase to uppercase (and vice versa). ($39.95 new from the Lemkesoft Web site or $38.99 from the Mac App Store, 150 MB, release notes).
Thoughtful, detailed coverage of the Mac, iPhone, and iPad, plus the best-selling Take Control ebooks.
Use Expose to Open Files Quickly
Looking for an easy way to drag a file into a hidden application? First enter Expose's All Windows mode by hitting F9, then hover over an application's window while dragging your file, pause for a moment (or press the Space bar) and that window will spring to the foreground enabling you to open the file within that application.
Visit plucky tree
Submitted by
GraphicConverter 8.5.3
Make friends and influence people by sponsoring TidBITS!
Put your company and products in front of tens of thousands of
savvy, committed Apple users who actually buy stuff.
More information: <http://tidbits.com/advertising.html>
Put your company and products in front of tens of thousands of
savvy, committed Apple users who actually buy stuff.
More information: <http://tidbits.com/advertising.html>


text:
Fares, schedules and ticketing for Greyhound Lines, the largest North American intercity bus company, wit... more
St. David's Episcopal Church. Serving the Topeka Kansas Area. more
Displaying 1-18 of 18 results
Page 1 of 1
Top Trending Articles
Unemployed? How to Make Your Own Money Using ...
Read some suggestions and ways that unemployed workers ... more
What is the Difference Between a Handyma...
A handyman provides a very differant service to a ... more
What is the Difference Between Satellite and ...
Both cable and satellite television are very popular th... more
Where to Find Cheap or Free Professional Serv...
Saving money on professional services is still possible... more
What Services Do Pet Cemeteries Offer?
When your pet dies, you need to find a pet cemetery to ... more
Because the locations were convenient, I gave this place 3 chances even after they were rude, mean to my ... more
I would never go back to them. They actually messed up my taxes last year by not including a W2 that they... more
© 2015 Local Corporation - US Patent 7,231,405
Some data provided by Acxiom. Questions and Comments?


text:
Visit create.airbnb.com »
Thanks for taking the time to report this user.
Your participation helps keep Airbnb a safe and trusted
community, and it doesn't go unnoticed!
I'm Sara, I love in Brooklyn, dogs, the summer, and good people.
Sara has completed online and offline ID verification.
Learn more »
Sara was a great host. The only trouble we had was with the sink and she was there to fix it in 5 minutes.
The room had all we needed. Could maybe need a microwave.
Liked the neighborhood. It felt safe and quiet. Close to Williamsburg. Would definitely recommend this place!
We enjoyed staying in Sarah's place. It had a nice fit out and was in a great, hidden away location really convenient for Greenpoint and an amazing bagel place a short stroll away. Sara was a very thoughtful host.
Only downside - little to no cell phone reception in the apartment.
I had a great time. The location was perfect and the place was clean. Sara was easy to reach and she has her office space in the same building.
Thanks Jonas - great to have you. Thanks for being an awesome guest.
Sara's place was great and really convenient. Nice location with a lot areas to shop. Easy transportation if you're looking for a way to get around. If you want to stretch your legs it's also nice walk to the subway station depend on which way you go.She also really there when you need her. All in all I would stay at Sara's place anytime.
It was a pleasure to stay at Sara's! Sara was very helpful and made sure that we enjoyed our stay! The neighborhood is really quite and relaxed. Make sure to grab something form Standard and have breakfast in Cafe Royal on Nassau Av!
Its a easy walk to Williamsburg and there are many places on the way worth to check. We used G train from Nassau Av station to go to Lorimer and from there with L train to Manhattan (14th street).
The building is really new and the apartment is in great shape! It is an plain place without Sara's personal stuff but a great place to stay. Sara's office is in the same building so you can go ask her if you need anything!
Thanks so much Tuukka, it was such a pleasure to have you guys!
Sara and her friend were lovely guests in our home. We would be delighted to have them back again soon. They were courteous and cooperative with the other guests in the house. I found them to be quite respectful and communicative with me. I wish my home were filled with more Saras....
What truly wonderful guests to (email hidden)ani! Well actually we hardly knew they were there! Two of the beautiful people in the world who leave a place better than they found it.......we highly recommend Sara and Toni and would have them back in a heart beat.
We wish them well in all their future adventures and are so pleased they chose Aolani to stay at.
Very nice guests! I really appreciated their communication when they needed to adjust the check in time. They were super tidy, quiet and a pleasure to host! They'd be welcome back anytime!
what should I say about sara? well, to start i'd say she loves brooklyn, dogs, summer and good people. oh wait looks like she wrote that about herself already. huh. in all seriousness, she is a wonderful individual and that description is worth mentioning twice. We've worked in the same office space for a little over 6 months now and its been a pleasure getting to know and work with her. In this time, I've come to know her as a caring person with loads of integrity and good common sense. one time we wore the same clothes to work. on another occasion her dog licked my face. and finally, there was the time she cooked dinner for me. it was wonderful. she also likes pickles.


text:
Who fucks with eastbound and down?
Did anyone catch the cameos at the end of Season 2?
The music on this one was RIDICULOUS and KfuckingP was incredible as always...
Post: 11
Join Date: Nov 2010
Post: 3288
Join Date: Dec 2007
Location: 510
Post: 190
Join Date: Jan 2009
Location: Portlandia
Post: 1333
Join Date: Mar 2011
Location: Jersey
Post: 2178
Join Date: Nov 2010
Upcoming season 3 will be its last
Post: 16
Join Date: Mar 2011
Post: 852
Join Date: Dec 2010
Location: Bay Area, CA
Upcoming season 3 will be its last
i'm the best mayne, i deed it
Post: 617
Join Date: Apr 2010
Location: CHI/Columbus
Are you sure because i remember a few episodes into the second season kenny powers said on Facebook that they signed up to make a 3rd and 4th
"We've always imagined this thing as something that we would keep short and not give it a chance to kind of get old," he explains. "We have really approached each season as if it was just an act of a larger story, and so the third season to us has always been the climax of the story."
McBride and co-creator Jody Hill admit that they already know how the story of Kenny Powers will end, and McBride even hints that said ending may be closer than we think.
Both acknowledge they have treated each season as "a long movie" and when asked if season three would bring the ending of the story, McBride responds, "Probably. Yeah, I think so."
i'm the best mayne, i deed it
Post: 1333
Join Date: Mar 2011
Location: Jersey
I thought it was coming February 19th?
i'm the best mayne, i deed it


text:
Ranked #2 Biggest Social Media Event of the Year!
Social Media Strategies Summit Las Vegas has been ranked #2 of the top 5 biggest social media conferences of 2013! Join other top brands and thought leaders for 3 days of interactive workshops and presentations! Click here for moreView Agenda Now!
Start Your Las Vegas Experience Early
with Pre-Summit Workshops!
Learn even more at SMSsummit Las Vegas by registering for a Pre-Conference Workshops*. Get a head start on your week by taking advantage of this opportunity to extend your Social Media education.Review the Workshops and register
*Additional registration fee required.
Post-Conference Networking Reception
This special 1-hour networking reception will include conference participants and speakers who are interested in networking, discussion, collaboration, and intense conversation about social media strategies and innovation.Don't wait, get your seat today!
Join us at SMSS- Las Vegas 2013!
GSMI is excited to be returning to Las Vegas! Be sure to secure your seats early as seating is limited. To assure attendees get the full benefit of an intimate summit, we only offer a limited number of seats.Don't wait, get your seat today!
Las Vegas Agenda Announced!
For a third year we have gathered the brightest minds in the social media marketing to present emerging strategies, tactics and case studies in the successful use of social media. This summit will consist of one full day of hands-on workshops and two summit days with three tracks: Business to Consumer, Business to Business & Small to Medium Business.View the Jam-Packed Agenda
Three Full Days of Interactive Learning
|Gabriella M. Israel
|@audiencemachine @GSMIonline Really impressed with the #SMSsummit so far. Definitely a hidden gem. Great speakers and a very great lunch
Who Should Attend:Everyone and anyone interested in learning from the best, how to harness the power of social media to further your brand's reach and impact.
Las Vegas Attendees will learn to:
About Social Media Strategies Summit:
Latest Articles from Blog
Social Media | By Breanna Jacobs | Thursday March 19, 2015
#SMSsummit Vegas last month was a blast. Featured here are key takeaways from a few of our talks – made fun through visual notes. Enjoy! Julie Hoffman of MGM Resorts International gave a closing keynote on user-centered social strategy – […]
The post Key Takeaways from #SMSsummit Vegas – MGM, Walmart and Pfizer appeared first on Social Media Strategies Summit Blog.
Read Article
Social Media | By Breanna Jacobs | Wednesday March 18, 2015
#SMSsummit Vegas last month was a blast. Featured here are key takeaways from a few of our talks – made fun through visual notes. Enjoy! Pam Moore, our summit opening keynote speaker, dived into strategies for collaborating with influencers, activating […]
The post Key Takeaways from #SMSsummit Vegas – Pam Moore, Western Union and Citrix appeared first on Social Media Strategies Summit Blog.
Read Article
Social Media | By Breanna Jacobs | Tuesday March 17, 2015
#SMSsummit Chicago is 7 weeks away… and with this stellar roster of speakers and talks, it's never too soon to start counting down. If you're already signed up – here are 5 reasons to get amped about the event. If […]
The post 5 Great Reasons to Attend the Social Media Strategies Summit Chicago appeared first on Social Media Strategies Summit Blog.
Read Article


text:
1 case of 96 batteries
|Product Rating
Rayovac Alkaline D Industrial Battery Reclosable 96/Case
$86.40 ($0.90/battery)
Get more power for your money with the Ultra Pro Rayovac D battery. Rayovac D batteries are engineered for professional use and are the #1 industrial selling brand. Rayovac D batteries last as long as Duracell and Energizer!
How does Rayovac compare to Duracell and Energizer?
- A+ all the way
Great prices. Friendly voice taking the order. Prompt shipment. Delivery met our needs. Net result...a very satisfied customer. A+ all the way.
Anonymous (Published 3/2/12)
Product Rating


text:
Interested in Salesforce Integration? Signup for a FREE live LMS for Salesforce demo today.
Why Choose Litmos?
Learning management systems (LMS) are historically one of the most hated applications in the business technology suite. Litmos is the disruptor in the industry, designed with the learner experience and administrative agility at the forefront.
Don't just take Litmos's 1,000,000+ users' word for it; experience it yourself and start your free trial now.
eLearning Blog
6 Tips To Successfully Carry Out An Online Training Needs Assessment0 Comments
Looking for tips on how to successfully carry out an effective online training needs assessment? In this article, I'll offer advice on how to conduct…Read More
Instructor-led Training: The WOW! is in the Details0 Comments
In this month's webinar I discussed Instructor-led Training, better known as ILT. But not the usual technical stuff. Instead, I wanted to share the importance…Read More
Improve Training Success with Performance Support - Guest post by Clark Quinn0 Comments
Courses alone are no longer enough, nor have they ever been. Trying to put information into our employees isn't always feasible, let alone being the…Read More
The Learning Zone: Stepping Away from the Comfort Zone0 Comments
Have you ever been "in the zone"? As an instructional designer have you ever considered your job to be getting people OUT of their comfort…Read More
Litmos LMS NEW FEATURES - Fresh Course Builder and Changes to ILT0 Comments
In our newest release, we are introducing HUGE improvements to existing areas of the system, the course builder and Instructor Lead Training (ILT) module. Because…Read More
The Importance of Re-designing Safety Training0 Comments
Safety training is the unsung hero of many industries. It's necessary for many reasons, but often unwanted by those who need it most. In the…Read More
5 Tips: Re-purposing Existing Courses for Mobile eLearning - Guest post by Tim Buteyn0 Comments
Most of the major eLearning development tools (Articulate, Captivate, etc) will tell you about developing once and publishing to many devices. While they technically can…Read More
5 Reasons to Embrace Instructor-led Training0 Comments
Cindi looks at the screen excited to learn something new. Her professional license is up for renewal soon. She needs 2 more continuing education credits before…Read More