text:
Bought but never used lot of North American Fishing Club books as seen in pics. Two of the books came with slight damage as seen in pics when I received them. I have never read them and only opened one for pics of the inside. Local pick-up only. Thanks for looking! =)
Mar 17 -
Charlotte Train Business Directory Travel Guide
Charlotte Train Business Directory™ companion guide provides locations, phone numbers & links for 'consumer-friendly' companies within a short distance of train stations.
All station maps are in order for riders to use on the train.
AVAILABLE on AMAZON...
Please Search ...
Mar 15 -
17 Agatha Christie Mystery Novels - Matching Blue Leather
We have 17 matching Agatha Christie novels. All are hardbound in a deep blue padded leather material although I think they may be leatherette, but definitely gorgeous. Purchased from a book collector but sizing down my collection.
Only asking $85 total for all 17 volumes ...
Feb 13 -
"Orange Teasers, A Compilation of Puzzles for Vol Fans"
By John Stephens, Copyright 1997 by Thematic Puzzles
This new Paperback Book is 8 1/2" x 11". It has 68 pages of crosswords (10), jumbles (5), matching (5), and search-a-words (10). An answer key is included.
See how ...
Mar 30 -
Knoxville :
Condition: NEW
Author: David Ferguson, Teresa Ferguson
Publisher: Tyndale House Pub ISBN-10: 1414301707
Subject: Religion & Spirituality
Topic: Devotions, Meditations
Format: Paperback
Language: English
Publication Year: 2001
The retail price on this is, $12.99, but ...
Great Books of the Western World: 54-volume set published by Encyclopaedia Britannica c.1952. Leatherette bound with gold embossing. Includes custom wood bookshelf. Very good, used condition.
Beautiful set - looks great in the library, the office, the den, even the ...
Mar 28 -
Atlanta :
Product Description
The "Publication Manual" is the style manual of choice for writers, editors, students, and educators. Although it is specifically designed to help writers in the behavioral sciences and social sciences, anyone who writes non-fiction prose can benefit ...
Mar 27 -
Greenville :
Boiling Springs
Product Description
Life is messy. Just look at Joseph. You might remember the Old Testament story. He was tossed in a pit, wrongfully imprisoned, forgotten, and dismissed. But Joseph's story contains an audacious promise. Whatever mess you face, God will use it for good. ...
Product Description
Zero Belly Diet is the revolutionary new plan to turn off your fat genes and help keep you lean for life! Nutrition expert David Zinczenko—the New York Times bestselling author of the Abs Diet series, Eat This, Not That! ...
Product Description
This new edition of the American Psychiatric Association's Diagnostic and Statistical Manual of Mental Disorders (DSM-5), used by clinicians and researchers to diagnose and classify mental disorders, is the product of more than 10 years of effort by ...
Product Description
In The 20/20 Diet, Dr. Phil McGraw identifies seven reasons other diets fail people over and over again: hunger, cravings, feeling of restriction, impracticality and expense, boredom, temptations, and disappointing results or plateaus. Then, he addresses ...
Product Description
Do you have the opportunity to do what you do best every day?
Chances are, you don't. All too often, our natural talents go untapped. From the cradle to the cubicle, we devote more time to fixing our shortcomings than to developing our strengths.
Taking a page from Harvey Penick's bestselling book of golf wisdom, Phil plays the role of both teacher and student, offering up insightful tips on how to think about poker and how to develop a singular style of play.
After fifteen years or keeping notes on the things he's ...
Product Description
Get the recipes everyone is talking about in the debut cookbook from the wildly popular blog Skinnytaste
Gina Homolka is America's most trusted home cook when it comes to easy, flavorful recipes that are miraculously low-calorie and made from all ...
Product Description
It Starts With Food outlines a clear, balanced, sustainable plan to change the way you eat forever—and transform your life in profound and unexpected ways. Your success ...
Binding: Paperback
Condition: Used
Paypal Only
Free Shipping
Mar 26 -
Atlanta :
Brand new, over $3,000 worth of new supplies:
This is an almost complete list:
22 Precious Memories
24 My Book of Prayers
38 God's Special Gifts to Me
31 Noah
15 Flooty Hobbs
15 Advice from a Very Large Toad
4 The World's Most Precious Baby
14 My best Friend
13 Scruff
21 ...
Mar 26 -
Tri-Cities (TN) :
In a world ravaged by wars and a lack of government authority, the future is a high tech and dangerous world with criminals and innocents co ...
Mar 25 -
Atlanta :
This is the eightieth anniversary reprint of the classic novel of the University of Virginia, and of old Charlottesville, Virginia, not available since 1928. A young cocktail-swilling poet-aesthete; wending his way through UVA's parties, secret-societies, academic and ...
Mar 24 -
Charlottesville :
Counseling Promise - Bookstore
Product Description
A necessary resource for anyone interested in alternative approaches to healing, this book contains more than 600 easy-to-follow recipes for essential oil treatments and aromatherapy.
Product ...
Mar 24 -
Greenville :
Boiling Springs
I am selling several Virginia Regimental books. Here I have the 9th Virginia Cavalry written by Robert Krick, 1982, 2nd edition. There is no dust jacket, but the book is in good to very good condition with clean cover, tight binding and clear pages. I will sell it for only ...
Mar 23 -
Charlottesville :
Fort Defiance
I am selling a great old railroad book, The Air Brake, Its Construction and Working from The Science of Railways by Marshall M. Kirkman, published in 1914 by Cropley, Phillips Company, Chicago, IL. According to the author this 789 page book is "a practical manual for ...
I am selling the 14th Virginia Cavalry which is part of the Virginia Regimental Series and was written by Robert J. Driver, Jr. It is a signed/numbered first edition published in 1988. The dust jacket is missing. In the right light there is some soiling of the cover, but the ...
I am selling the 52nd Virginia Infantry written by Robert Driver, Jr. This is a signed, first edition, #719 of 1,000 printed in 1986. The dust jacket is missing, but the covers are clean, the binding is tight, and the pages are clean and clear. A previous owner did write him ...


text:
Halloween is one of my favorite times of the year because it's the one day you get to dress up as someone entirely different from your normal self. You can be anyone or anything you want to be, which leaves the creative doors pretty wide open. Some prefer to go the scary route with ghosts, vampires, and werewolves (of the non-Twilight realm), while others choose to dress as their idols or favorite Hollywood stars. Being that we are an entertainment site, we thought it would be fun to help you determine just which celebrities are totally "in" this year and the criteria that will help you decide which famous star is the right fit for you. So if you've been procrastinating buying a costume up until this point, check out a few of our suggestions below:
If you had an extravagant wedding this year, you should be Kim Kardashian and Kris Humphries
This reality couple have made headline history this year with all the speculation of their anticipated nuptials. Seriously, you couldn't browse the web without running into stories about these two. Their wedding was even made into two part E! Special. So if you're a newlywed couple, just put that dress and tux back on and head out to the bars! (And here you thought you'd never get a chance to wear those outfits again)
If you stopped a fight this year, you should be Ryan Gosling
As if we needed another reason to love Ryan Gosling, earlier this year he broke up a fight on the streets of New York City, which quickly became a YouTube sensation. Ryan Gosling the actor -- and the hero?! Sounds yummy to me! So if you have a ready-made six pack and a wife beater lying around, just add a pair of gym shorts and sunglasses and you'll be good to go. Take a look at this if you need more inspiration (guys -- the ladies will love it!)
If you had a love-child this year, you should be Arnold Schwarzenegger
One of the biggest celebrity scandals of the summer was the split between Arnold and wife Maria Shriver, after news broke out that Arnold had fathered a child with his housekeeper 14 years ago. So if you, yourself, got caught in a similar bind this year, why not portray the former Terminator this Halloween? For this, I would suggest either dressing in a business suit while being accompanied by a maid or you can simply do what Arnold did and wear a T-Shirt to get your point across.
If you had an public meltdown this year, you should be Charlie Sheen
Charlie Sheen literally unraveled before our very eyes as his career hit rock bottom. After getting fired from Two and a Half Men, Charlie kinda went off his rocker and basically convinced the public that was certifiably insane. During interviews, he coined the phrases like "winning" and referred to himself as a "warlock" or "rock star from mars." For all intents and purposes, he was on a delusional drug trip and we were all just along for the ride. But crazy or not, this guy has certainly become a household name like never before. For this costume, I would suggest hiring two "goddesses" for the night or -- if your bank account won't allow -- then pretty much just wearing anything that says "winning" on it will do the trick (or treat).
If you developed an alter ego this year, you should be Jo Calerone
This year's Video Music Awards was not hosted by Lady Gaga, but by her alter ego, Jo Calderone. Never breaking character, Gaga portrayed Jo throughout the entire duration of the awards show (supposedly even backstage she remained her male counterpart). Jo originally made an appearance in her "You and I" music video, but he's gained major television face time since then, so I have a sneaking suspicion this isn't the last we'll see of him. To transform into Jo, all you need are some dress pants, a dress suit, and some hair gel. You may also want to look into harnessing a convincing Brooklyn accent while you're at it. I bet if you tweet of pic of your costume to Gaga she'll love you forever!
If you're rocking a baby bump this year, you should be Beyonce
Beyonce pretty much stole everyone else's thunder at the VMAs this year when she announced her pregnancy with a simple gesture: rubbing her stomach. While there's been much controversy about her disappearing and reappearing baby bump, it's clear that this singing diva can pretty much rock any look -- baby bump or not. This outfit is relatively simple to carry out as well. Just wear the most amazing outfit you have in your closet and hit the town! If your bump isn't really showing yet, then feel free to use any nearby pillow.
If someone invited you to a dance via YouTube, you should be Mila Kunis or Justin Timberlake
This past summer, YouTube became the go-to place to invite celebrities to the Marine Corps Ball. It originally started out as a cute idea done by one man, but it quickly escalated into a Hollywood sensation. Seriously, I wasn't sure if the madness was ever going to stop for a while, but it was definitely a unique way to reach out to your favorite movie stars. For this, it would be great to find a sash to wear and write "Marine Corps Ball Attendee" on it or something. People will get the idea -- it was literally all over the web.
If you did anything you should be ashamed of this year, you should be Lindsay Lohan
Any bad habit or incident will probably fit the bill with this girl. Whether it's heading to court, violating probation, arriving late to community service (or just being kicked out entirely), posing nude for magazines, serving time under house arrest, drugs, drinking, shoplifting -- the list goes on and on -- our Lindsay has certainly gotten herself into a fair amount of trouble over the years, but she makes for one great Halloween costume. It's simple -- the night before Halloween go out and party then proceed to wake up with the biggest hangover in the world. Look in the mirror and there's your costume. One hot mess coming right up!

subset: commoncrawl


text:
Neil's Live 6max 50NL
Neil takes you through the beginning of a live session at 50NL as he develops reads.
Whirleymob's 50PLO Review (4)
Part 4 of Neil's 50PLO series.
Whirleymob's 50PLO Review (3)
Part 3 of Neil's 50PLO session review!
Whirleymob's 50PLO Review (2)
Neil continues with part 2 of his 50PLO review.
Whirleymob's 50PLO Review
In his first ever PLO video for BlueFirePoker, Neil introduces you to his PLO thought processes at 5...
Whirleymob's 50NL Session Review (3)
Neil reviews part 3 of his 50NL session.
WhirleyMob's Full Ring HH Review
Neil reviews some full ring hand histories discussing interesting hands he has played recently.
Whirleymob's 50NL Session Review (2)
Neil continues with part 2 reviewing his 50NL session.
Whirleymob's 50NL Session Review
Neil reviews his play from a recent session of 50NL.
WhirleyMob's Playing My A-Game: Mental Game
Neil breaks down the mental aspects associated with being on top of your game!


text:
in National
Italy's highest court has overturned the murder conviction against Amanda Knox, bringing to a definitive end the high-profile case.
Six world powers and Iran move closer to a deal, but there are still major disagreements.
A look at some of the week's biggest headlines and the stories you may have missed.
in Entertainment, National
Celebrities call for an Indiana boycott after the passing of a controversial law that could lead to discrimination against gay couples.
Senate Minority Leader Harry Reid says that it would be "inappropriate" for him to seek re-election.
in Lifestyle
The White House announce a five-year plan to fight drug-resistant germs.
You know how some people insist they can drive safely — even while they fiddle with their smartphones or other electronic devices? They can't.
House Republicans are proposing a new government certification for foods free of genetically modified ingredients.
Along the way, they're pushing cities to be more welcoming of families.
Could having a password become passé?
in Trending, Viral Videos
Actor Billy Zane pokes fun at the fact he shares a similar name to former One Direction member Zayn Malik in a new video.
in Entertainment
A look back on some of Hollywood's most memorable headlines.
in Music
LISTEN: This week's top pop songs, according to the latest Billboard chart.
Angelina Jolie and Emma Watson top the list of the world's foremost feminist icons.
"It Follows" is a horror movie worthy of classic comparisons.
The Skiing is still great at Mount Snow! Text to Win Lift Tickets….
Coming to the Cheshire Ice Arena April 10th-12th! Bring a non-perishable food item and save $1 off admission!
Happening Saturday April 18th at KSC– take a stand to end gender violence!
On sale this Saturday at 9am, save 40% on a Wedding Package at Alyson's Orchard! Only one package is available at this special deal….
Hey ladies… see your fun Photo Booth photos here on Kendal's FB Page!
Check and see if there are any reported closings or delays.


text:
TAG Trousers: Thirst
Credit: CMM advertising, Art Director: Ajoy Kumar Das, Photography: K. Vijaysekar, Copywriter: Radhika
1 comment
thendral58Apr 23, 2008 - 7:47
The Visualisation is cool. Appreciate the white space to give more effect to the Advtg
A word of encouragement during a failure is worth more than an hour of praise after success. - Tvanovic
The Dream is not what you see in sleep, Dream is the thing which does not let you sleep - APJ Abdul Kalam


text:
Hotel & Spa Poco a Poco, Monteverde
Situated in Monteverde, Hotel & Spa Poco a Poco is in the mountains and regional attractions include Butterfly Conservatory, Arenal Eco Zoo, and Costa Rica Sky Adventures.
Hotel Features.
Hotel & Spa Poco a Poco has a full-service spa, an outdoor pool, and a health club. Complimentary wireless Internet access is available in public areas. Dining options at this spa hotel include a restaurant, a poolside bar, and a swim-up bar. A complimentary breakfast is served each morning. Additional amenities include a children's pool, a spa tub, and a children's club. Self parking is complimentary.
The 32 guestrooms at Hotel & Spa Poco a Poco include safes and coffee/tea makers. 26-inch flat-screen TVs are equipped with cable channels and DVD players. All accommodations provide desks and phones. Bathrooms offer showers, hair dryers, and complimentary toiletries. Additional amenities include irons/ironing boards and blackout drapes/curtains. In addition, a turndown service is offered nightly, housekeeping is available daily, and amenities available on request include hypo-allergenic bedding.
loved this place. was clean, great friendly staff, close to the centre, supermarket and…
Rooms were plain but clean. No air conditioning. We were in the rain forest, cool and…
Enter dates to check prices
Hotel Info: 866-539-8117from $101
- Standard Room (Bromelia)
- Deluxe Room (Quetzal)
- Quetzal Room
Recommended hotels
At a glance
Key facts
Hotel size
- This hotel has 32 rooms
- This hotel is arranged over 4 floors
- Check-in time 2 PM-10 PM
- Check-out time is noon
Required at check in
- Credit card or cash deposit required
- Government-issued photo ID required
- Minimum check-in age is 18
Travelling with others
- Children (11 years old and younger) stay free when occupying the parent or guardian's room, using existing bedding
- Children's club
- Pets not allowed
Extra people
- Roll-away beds available, charges may apply*
- Free WiFi in public areas
- Free self parking
- Accessible parking
Nearby Four Star Monteverde hotels
In the hotel
- Children's club
- Free breakfast daily
- Restaurant
- Swim-up bar
- Poolside bar
- Room service (during limited hours)
- Outdoor pool
- Children's pool
- Health club
- Full-service spa
- Spa treatment room(s)
- Ecotours nearby
- Swim-up bar
- Spa tub
- Steam room
- Sauna
- Front desk (limited hours)
- Hair salon
- Number of buildings/towers - 1
- Year Built 2001
- Garden
- Disabled parking
- Accessible bathroom
- In-room accessibility
In the room
- Coffee/tea maker
- Iron/ironing board
- Hypo-allergenic bedding available
- Down comforter
- Blackout drapes/curtains
- Turndown service
- Private bathroom
- Shower only
- Free toiletries
- Hair dryer
- 26-inch flat-screen TV
- Cable TV channels
- DVD player
- Desk
- Phone
- Daily housekeeping
- In-room safe
- Access via exterior corridors
Top Monteverde hotels
Recently reviewed hotels in Monteverde
- CERRO CHATO ECOLODGEFrom
"Very easy check in and check out. Location makes it easy to enjoy all activities in the area. A rental car is a must. Staff is great. If you are looking for simple clean quiet…"Mar 7, 2015
- Volcano Lodge and SpringsFrom
"The junior suite was awesome with its own deck and its own hot springs! The room was very comfortable --with air conditioning, robes and slippers included too. The junior suite…"Mar 3, 2015
- Cabinas MadeleineFrom
"We had to stay at Cabinas Madeline when American Airlines delayed us to the point of missing the last ferry. We arrived after midnight and despite the fact that they were locked…"Mar 3, 2015
- Hostel La Choza InnFrom
"Very suitable for a short stay. Was pleased that the room had a safe, hairdryer and coffee machine. Pleasant basic breakfast. In walking distance to the main town - literally 2…"Mar 3, 2015
Nearby hotels
Special features
Naroa has 2 treatment rooms including rooms for couples and outdoor treatment areas. Services include massages, facials, body wraps, and body scrubs. The spa is equipped with a sauna and a spa tub. A variety of treatment therapies are provided, including aromatherapy and hydrotherapy.
DiningOtocuma - This poolside fine-dining restaurant specializes in international cuisine and serves breakfast, lunch, and dinner. Guests can order drinks at the bar and enjoy alfresco dining (weather permitting). A children's menu is available.
Hotel & Spa Poco a Poco, Monteverde's small print
Also known as
- Hotel Poco A Costa Rica
- Poco A Monteverde
- Hotel Poco A
- Hotel & Spa Poco a Poco
- Hotel & Spa Poco a Poco Arenal Volcano Region
Children under 11 years old are not allowed in the swimming pool without adult supervision.
This property does not have elevators.
Reservations are required for massage services and spa treatments and can be made by contacting the property before arrival at the number on the booking confirmation.
The name on the credit card used at check-in to pay for incidentals must be the primary name on the guestroom reservation.
We have included all charges provided to us by this hotel. However, charges can vary, for example, based on length of stay or the room you book.


text:
Recent Stories
- Science Day at Heysham Power Station
- New Head of Physics
- Keswick School rockets to success in STEM Challenge day
- Major feat of engineering opens doors to future
- New Business Partnerships and Enterprise Deputy Director in post
- New guidelines to support research fellowships
- Strategic partnership with Danish university to boost research collaboration
- A decade of 'Innovation, Interaction and Impact': InfoLab21 turns Ten Years Old
- The scientific method and the Higgs Boson
- Physics student wins blogging award
ISIS Case Study: 2BZ Media Developers Ltd
2BZ Media Developers Ltd deals with 3D virtual environments using avatar browser technology to create virtual user representation online. Surfing the Internet in 3D technology strives to close the gap between the physical and virtual space.
The company has over 20 years background in virtual community software development, web, graphic design and marketing. They have recently developed a 3D urban magazine called Feed Your Head 3D, and have two other virtual magazines covering education, and sports using their technology.
In July 2010, 2BZ wanted to develop a system to allow the products on sale by shop owners to be viewed in true 3D 360 view rotation. Their existing system was limited, and despite appearing in a 3D virtual environment, images of products appeared on the walls in 2D.
They were referred to InfoLab21 by Business Link as they did not possess the technical capability in-house and could not find an appropriate technology provider.
Dion Croom, Managing Director, said,
"We chose support from the ISIS Project rather than going to the ICT sector because we had difficulties in finding an appropriate and competent provider. The wealth of talented academic programmers and developers available via ISIS seemed a logical fit for this exciting product development."
Through ISIS, the appropriate transformational technology was researched thoroughly, reviewing heavyweight industry solutions such as Maya and 3D Studio Max before settling on a lighter Adobe Flash solution. InfoLab21 developed a tool which allowed the company to produce Flash-based virtual 3D models easily for inclusion into the online shop.
In undertaking this work it is anticipated that there will be an improvement in company performance leading to a 25% GVA improvement over two years. Six new jobs could potentially be created and 10 jobs safeguarded over the next year.
"We were surprised and delighted by the speed at which the Graduate Academy completed the first profile. We were very pleased with the final product and have started the process of implementation into our core product range." Dion concluded.
Since the programme, 2BZ has maintained an excellent relationship with InfoLab21 and has also benefited from an Innovation Voucher and two students placements.
ISIS is the first project of its kind in the UK and is delivered under the "Transformational ICT" product, part of the Government's Solutions for Business portfolio, part-financed by the European Regional Development Fund.
For more information on ISIS and
on 2BZ Media Developers Ltd please go to the links below.
Thu 14 April 2011
Associated Links
- 2-BZ Media Developers
- ISIS - InfoLab21's Strategic Innovation Support Programme (ISIS) aims to raise levels of ICT investment across the region by providing objective advice, guidance and appropriate ICT solutions to SMEs
Latest News
Science Day at Heysham Power Station
A Faculty team representing science, technology, engineering and maths took part in EDF Energy's 'Science Day' on Saturday 21st March at Heysham Power Station.
Wed 25 March 2015
New Head of Physics
Professor Roger Jones has replaced Professor Peter Ratoff as Head of the Physics Department. Roger gained a PhD studying neutrino interactions at CERN and Fermilab before starting his career at CERN working at the Large Electron-Positron (LEP) Collider.
Tue 24 March 2015
Keswick School rockets to success in STEM Challenge day
As part of British Science week, 170 students from 14 schools across the region came to Lancaster University on Wednesday 18th March to compete in science, technology, engineering and mathematics challenges.
Mon 23 March 2015
Major feat of engineering opens doors to future
Lancaster University's new flagship Engineering Building will provide a beacon of excellence for research and recruitment for the UK's buoyant and significant engineering industry.
Mon 23 March 2015


text:
Then Jesus said to his disciples, "Truly I tell you, it will be hard for a rich person to enter the kingdom of heaven. Again I tell you, it is easier for a camel to go through the eye of a needle than for someone who is rich to enter the kingdom of God." When the disciples heard this, they were greatly astounded and said, "Then who can be saved?" But Jesus looked at them and said, "For mortals it is impossible, but for God all things are possible."
- Matthew 19:23-26
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There could only be one winner of the Broadway's Biggest Fan contest. Watch to see who Orfeh, Nick Adams and Marissa Jaret Winokur chose to be the first fan ever to win a trip to the 2013 Broadway.com Audience Choice Awards in New York City!
Broadway.com spent the afternoon with Younger stars Sutton Foster, Debi Mazar and Miriam Shor and costume designer Patricia Field to chat about the new TV Land comedy and filming in NYC...then we play a lighting round of pop culture trivia!March 13, 2015
Video clips of Kristin Chenoweth, Peter Gallagher and the rest of the cast performing in On the Twentieth Century.March 13, 2015
Hamish Linklater on a sculptor and playwright sparring about legacy in Doug Wright's Posterity.March 13, 2015
Spending a day in Something Rotten! rehearsals with Tony Award winner Casey Nicholaw, a Broadway hitmaker who has directed and choreographed shows like The Drowsy Chaperone, The Book of Mormon and Aladdin.March 13, 2015
Opera superstar Renee Fleming is getting ready to make her Broadway debut in Living on Love, but who is the biggest diva in the show? Douglas Sills, Jerry O'Connell, Anna Chlumsky and more tell all!March 12, 2015
Mamoudou Athie reveals how the new play The Mystery of Love & Sex explores the lives of couples from different generations.March 12, 2015
Kara Lindsay is back and she's raiding all the fridges backstage at Wicked.March 12, 2015
On this week's episode of The Broadway.com Show, we've got news about the Beauty and the Beast movie musical, added Hedwig material for Darren Criss and Bruce Willis' new Broadway gig.March 11, 2015
If/Then star James Snyder has the connections in his show all figured out. It's so simple. Right?!March 11, 2015
Stage and screen stars Carey Mulligan and Bill Nighy talk transferring the acclaimed London production of David Hare's Skylight to Broadway.March 10, 2015
Watch Keith Carradine sing 'I Still See Elisa' from the Encores! production of Paint Your Wagon, running March 18-22 at City Center.March 10, 2015
Nathanial Hackmann and the cast of City Center Encores! production of Paint Your Wagon sing 'They Call the Wind Maria' to preview their production, which runs March 18-22.March 10, 2015


text:
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From Westminster to Hollywood, Prometheus to Piranha 3DD: we chart the past seven days in cinema


text:
Halpin Pages (100+)
See More >
Halpin Mentions
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1922 - 2013 |
Virginia Halpin
Sept. 6, 1922 to Aug. 21, 2013
Resident of Burlingame
Virginia Mae Halpin (Jacobsen) died at the age of 90 on 8/21/13 at home in Burlingame. Those who knew Ginnie know she smiled upon them with her love, strength and humor while fighting
breast cancer
for 34 years. She loved her family, friends, doctors and nurses as well as the SF Giants, 49ers and all things involving sports.
Ginnie was born on 9/6/22 and raised in Healdsburg, CA. She graduated from Healdsburg High and during the summers she picked prunes and hops. She later worked at Southern Pacific RR in SF until Jan. 1943 when she joined the Navy Waves. She went to NY for boot camp and then to OK for 3 months for Yeoman School and graduated as a 3rd class Yeoman. She was at Camp Parks and then transferred to Treasure Island Naval Station with duty at Y.B.I. before being discharged in 1948.
She later went to the Federal Office Bldg. in communications where she met Jack Halpin. Ginnie and Jack were later married and lived in Hawaii where Jack was stationed in Pearl Harbor before settling down in Burlingame. They raised her stepson John Halpin and were married for 38 years before Jack's passing in 1993.
Ginnie volunteered at the
Ginnie reconnected with high school sweetheart, Jack Eagan in 1998. They had an 11 year love affair before Jack passed away in 2009.
Ginnie was the loving daughter of Kate and Fred Jacobsen and a devoted big sister to Helen, John and Jake, all of whom are deceased. She is survived by stepson John Halpin (Basia), granddaughter Nicole; nieces Kris Mongerson (Ben), Karen Jacobsen (Carol), Nancy Ellis (Sparky); nephews Rick Jacobsen (Viki), Mark Jacobsen (Nancy), Chris Jacobsen (Kelly), Scott Ogilvie (Barbara) and many wonderful great nieces and nephews who loved to hang out with her.
A celebration of Ginnie's life will be held on 9/1/13 in Bodega Bay at 2:30 p.m. at the family's home. Call (916) 803-5253 for more info. The family would like to say a special thanks to Dr. Brown and California Cancer Care and to her caregiver Denise Maxey-Jordan. In lieu of flowers, a donation may be made to
Jerrica Serbian, SMART Cremation (650)376-5080
Published in San Jose Mercury News/San Mateo County Times on Aug. 29, 2013
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Toyota 3b Diesel W/ Garrett Turbo Bj60 Bj42 Fj62
Did this video help you?
GunKindOfGuy: where did you get that power steering bracket
Trife Lyf: Purrs like a kitten. I am in love with my land cruiser. Best purchase I've ever made.
nickly28: no bad
vandohky: Wow, like brand new.
mohumph88: Hello, good video. by the way i want to ask; do we need to change the piston for turbo-ing the 3b engine? thanks
G Man: If ya really want better mpg's straight pipe it! 15-25% gain in mpg! Slight power/torque increase too.
birddogg501: @hunzala92 you must not driven a diesel xj before
Charli Doan: using turbo for offroad???
seafogdesigns: no alpha for that baby
TNssrx: nice nice, must go good with a garret, i myself have a 95 hilux surf 3.0 turbo diesel, with a garret ball bearing turbo, pwr intercooler, and a power chip, for a surf, it flies,quicker than a new toyota hilux diesel...
Toyota 3b diesel w/ Garrett Turbo bj60 bj42 fj62 4.3 out of 5


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VIEWS: 22 PAGES: 1 CATEGORY: Childrens Literature POSTED ON: 11/29/2009
BACP Attendance Report Mind Annual Conference and Exhibition 15 – 16 March 2006, Harrogate, North Yorkshire This years conference theme explored the notion of 'making service user involvement real' with an emphasis on 'what is service user involvement?' Lectures, workshops and debates throughout the event focused on service user involvement throughout the NHS system from working with your GP to influencing strategy across a trust or council, and service provision outside the statutory sector. Sessions included shared experiences from individuals, charities, academia, trusts and councils. During the 2 days there were parallel sessions on: older people and mental health: attitudes to services Mind's focus, a discussion on Mind's direction in the coming year To what extent is service user involvement a sham? Survivor-defined outcomes in measuring performance of mental health services How tangoing saved my life, inspirational stories These were organised into session types which were clearly defined as: Debates and discussions Lectures Workshops Speakers of particular note include: Dr McKenzie, Senior Lecturer in Transcultural Psychiatry at the University College Medical School Kay Sheldon, Mind Trustee Dr Petre Jones GP, The Project Surgery, Plaistow, London Professor Susan Benbow, Chair of the Faculty of old age psychiatry, Royal college of Psychiatry Lyndsey Dyer, Director, Service Users and Carers, Mersey Care NHS Trust Marion Janner, Director Bright David Crepaz-Keay, Senior Policy Advisor on Patient and Public Involvement, Mental Health Foundation Toby Williamson, Communications and Stakeholder Engagement Manager – Department for Constitutional Affairs Beverley Brennan Events Manager May 2006 Sec/confreports/bb/mind2006/webreport 1
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text: You purchased your Mustang because its reliability and long-lasting quality agreed with your nature; so why would you be okay with second rate when it comes to superior quality auto parts? While it's not hard to find replacement parts for Ford vehicles, these days the necessity for nothing but the highest quality are required to maintain your car or truck. It's not every day that you realize that you have to buy a replacement Cylinder Head Studs & Bolts to fix your car or truck. Your Ford dealership isn't the only place to locate trusted replacement parts for your Mustang. Using quality seals and hardware is crucial when servicing your Ford Mustang cylinder head. It is recommended on any head job that a new head gasket set and cylinder head bolt set is installed. It's never a pleasant experience to overhaul your top end, so make sure that new Ford Mustang cylinder head bolts are used to attach the head to the engine block. This means there is less room for future problems to happen with quality cylinder head studs and bolts in your engine. Given all the trouble that can be involved with performing maintenance on your car or truck, let www.carpartsdiscount.com be the website you go to make purchasing it easy. At Car Parts Discount, we have live customer service members here to help you buy the appropriate Ford Mustang part for your needs. Procuring new Ford parts from www.carpartsdiscount.com means you are getting the best deal on the highest quality original and aftermarket replacement Mustang parts on the internet.


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Chicago Bulls
Derrick Rose's Injury The Latest Blow To Class Of 2008
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Hassan Whiteside Throws NBA-Style Block Party
Hassan Whiteside, the Miami Heat's newly discovered star, turned in one of the best games any big man has played in the NBA this season.
Goal Accomplished: Hassan Whiteside Raised His NBA 2K Rating
Follow WQAM on Twitter | Facebook Miami Heat center Hassan Whiteside shared a personal goal with a nationally televised audience after recording his first career triple-double in victorious fashion against the Bulls on Sunday. He's motivated, in part, to […]
Heat In Chicago To Face Division Leading Bulls
After narrowly holding on for a win against Indiana on Friday, the Miami Heat are back on the road to face a division leading team.
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An already rough season could be about to get even more difficult for the Miami Heat.
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Mike Dunleavy scored 22 points and the Chicago Bulls overcame a sloppy start Sunday to beat the offensively inept Miami Heat, 93-75.
Happy Heat Return Home To Face Bulls After Long Road Trip
The Miami Heat are happy to return home after a long road trip, even if their opponent is one of the better teams in the Eastern Conference.
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Despite living in the post-LeBron era, the Miami Heat are not lacking superstar talent.
Heat Open Season With 107-95 Win Over Wizards
The Miami Heat opened their post-LeBron era with a winning group effort.
5 Best Teams In NBA Heading Into 2014-2015 Season
The NBA season is just two weeks away. Let's break down who the five best teams in the NBA are.


text: Web exclusive! Cooking from scratch just got a whole lot easier. Original: $46.00 Sale: $31.99 With the fantastic Fox Run Craftsmen® Tomato Press you'll be creating homemade sauces, purees, stews and baby food in no time. This easy to use press features plastic construction with a suction base. It will make an ideal gift for the amateur chef or new mother in your life. 10inch H Imported More


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Arlen Roth - Lap Steel Guitar
By Arlen Roth
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Arlen Roth - Lap Steel Guitar for Steel Guitar. Music Sales America. Country, hawaiian, jazz. DVD. Duration 45 minutes. Hot Licks #HOT539. Published by Hot Licks (HL.14002097).
Though Arlen Roth has written many books and done many videos on slide guitar, this is the first time he's done a Hawaiian Lap Steel video. And even though there are many obvious parallels and crossovers between learning this increasingly popular instrument and slide guitar, this lesson helps bring into focus many of the unique properties that the Lap Steel is best adapted for, such as: chord work, blocking and damping, David Linley style harmonic chimes (various types), blues slide, Hawaiian style, open E tuning, high bass G tuning, open vs. closed position licks, jazz-style runs, country- and Hawaiian-style double-stop harmonies, advanced behind-the-slide bends, proper techniques, and so much more! If you're just getting into lap steel, or even if you've been playing a for a while, this DVD will surely help you make the right moves on the instrument, while inspiring you on to greater personal creativity in the process. A true must for all slide players! Booklet enclosed
You'll never miss a note! All exercises are transcribed in the accompanying booklet, corresponding to example numbers on the screen. And of course, all right- and left-hand techniques are shown close-up, with special split-screen effects, so you can closely observe and learn all the subtleties the top players are known for. 45 minutes.
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Shabby Chic Rocker painting
I posted a pic on the Trash to Treasure board of a rocking chair I painted. I didn't know where to put that thread, but maybe I should have put it here. But the rocker was definitely trashy when I found it. I think I only paid $5-10 for it. I can't remember because I bought it and let it sit for some time before I painted it.
Oceanna, If your rocker had painted designs on it, by all means it should be posted over here too. If you post your pics on the gallery, they will probably stay on the forum longer.
I like to visit Trash 2 Treasure also, but don't always get there as often as I come here.
That's true, but several of us post in multiple forums. Like some things are T2T and Painting. Or like my Christmas signs fit Painting and Holidays and maybe even Crafts or GJ. They can fit many categories, and not all members go to all the forums so they might miss it if posted only one place. ;o) No real right or wrong, just where you'd like to show it. Luvs


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Simply Ghost Nights returned to Dewsbury Town Hall on the 21st March 2015 for a ghost hunting event at one of West Yorkshire's much sought after ghost hunting venues. On our previous events our guests have seen full blown apparitions and children have been heard
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Ghost hunts at Wasdale Hall in Cumbria are abound with ghostly tales of past visitations from the spectral residents of Wasdale Hall the history of the previous sightings and hauntings were quite exciting, our thoughts were which spirits would awaken from their slumber to communicate with our brave ghost hunters. What would happen when Simply Ghost Nights and a group of ghost hunters braved Wasdale Hall for a ghost hunting event.
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4) The offensive line played just well enough against Detroit.
Jon Gruden put a national spotlight on the Ravens' blocking woes with his intro to ESPN's Monday Night Football telecast. Given that backdrop, the line acquitted itself well for most of the game. The Ravens' running game feels like a lost cause at this point, especially against an elite... Leon Halip / Getty Images


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Welcome to the Sanford Police Department Web Site
Latest News at Sanford PD
Human trafficking is the fastest growing crime in the world. It is a topic that is difficult to discuss and even tougher to combat. Recent media reports confirm that this crime is occurring too often and it is happening right here in Maine. The Sanford Police is dedicated to this cause and has appointed Det. Sgt. Matthew Jones as an Agent with the Human Trafficking Task Force here in Maine.
click here for the full story
Chief of Police, Thomas Connolly Jr. presented the following awards to Detectives and Officer during a ceremony at the Police Dept. today. These awards were presented to Detectives/Officers who distinguished themselves in their duties. The following is a list of officers who received awards: SEE FULL STORY
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Contact the Sanford PDWe appreciate your constructive comments and are continually striving to find ways to enhance the level and quality of service to the community. If you would like to leave a message for a specific department or send us your comments, just complete this short form.
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Tenuta Sant'antonio Il Rosso Telos 2010
Tenuta Sant'antonio - Veneto - Italy
2010 saw extremely high quality viticulture in many parts of the world, with an exceptionally long and hot summer providing huge benefits for wineries across many countries, especially in the southern hemisphere. The northern hemisphere and Europe saw something of a cooler summer and flowering period, but this was by no means as disastrous as it could have been. France, especially, had a fantastic year in 2010, with the world renowned Burgundy region proclaiming that their white wines of this year are ones to look out for, and despite yields being relatively small across much of the country, the quality was exceptionally high. Spain, too, received some cooler weather, but Rioja and the rest of central Spain are hailing 2010 as a very good year indeed, again as a result of smaller, finer yields. California also received similar climatic conditions, but again, wineries are highly positive about the overall effect this had on their produce, as the slightly challenging conditions resulted in smaller yields of much elegance and distinction. 2010 was really Australia's year, and in South Australia and across the Mornington Peninsula, Chardonnay vines produced good yields with a lower sugar level than in previous years. As such, the majority of South Australian white wines from 2010 are superb, and packed full of character. Shiraz also had a great year, and most Australian wineries have been proclaiming 2010 one of the great vintages. Both the Argentinian and Chilean wine industries benefited from some ideal climatic conditions this year, and are reportedly ecstatically pleased with the fact that their 2010 wines ended up with lower alcohol levels, and were beautifully balanced wines packed full of flavor.
Veneto's wine are much loved around the world for their strength of character, and the region itself is an interesting one from a viticultural perspective. Sheltered by the Alps, Veneto is protected by the harsh central European climate, making it possible to grow a wide range of high quality grape varietals, which wineries manage to do to great effect. This beautiful corner of north-eastern Italy has over ninety thousand hectares under vine, with over a third of this area having the prestigious DOC rating awarded to it by the Italian government. Veneto is Italy's second largest producer of wines, and their dedication to quality and innovation brings about a fantastic range of wine styles, enjoyed around the world for their flavors, aromas and distinctive character.
There are few countries in the world with a viticultural history as long or as illustrious as that claimed by Italy. Grapes were first being grown and cultivated on Italian soil several thousand years ago by the Greeks and the Pheonicians, who named Italy 'Oenotria' the land of wines so impressed were they with the climate and the suitability of the soil for wine production. Of course, it was the rise of the Roman Empire which had the most lasting influence on wine production in Italy, and their influence can still be felt today, as much of the riches of the empire came about through their enthusiasm for producing wines and exporting it to neighbouring countries. Since those times, a vast amount of Italian land has remained primarily for vine cultivation, and thousands of wineries can be found throughout the entire length and breadth of this beautiful country, drenched in Mediterranean sunshine and benefiting from the excellent fertile soils found there. Italy remains very much a 'land of wines', and one could not imagine this country, its landscape and culture, without it.


text:
A method for enhancing the reliability of copper interconnects and/or contacts, such as the bottom of vias exposing top surfaces of buried copper, or at the top of copper lines just after CMP. The method comprises contacting the exposed copper surface with a vapor phase compound of a noble metal and selectively forming a layer of the noble metal on the exposed copper surface, either by a copper replacement reaction or selective deposition (e.g., ALD or CVD) of the noble metal.
1. A method for selectively forming a conductive layer in an integrated circuit, comprising:
providing a copper-exposed surface as a first surface and a non-copper surface as a second surface; and
contacting the first surface and the second surface with a vapor phase compound of a noble metal for replacing copper on the first surface with the noble metal dissociated from the compound, thereby depositing the noble metal predominantly on the first surface relative to the second surface as a result of replacing copper on the first surface with the noble metal dissociated from the compound.
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33. A method for selectively forming a conductive layer in an integrated circuit, comprising:
providing a copper-exposed surface as a first surface and a non-copper surface as a second surface, the first surface being defined by a metal feature of the integrated circuit, the metal feature comprising copper;
contacting the first surface and the second surface with a vapor phase compound of a noble metal; and
performing a replacement reaction, wherein the copper of the metal feature is replaced with the noble metal dissociated from the vapor phase compound of the noble metal, thereby depositing the noble metal predominantly on the first surface relative to the second surface.
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This application claims the priority benefit under 35 U.S.C. § 119(e): U.S. patent application Ser. No. 60/622,141 to Kilpera, filed Oct. 26, 2004; and U.S. patent application Ser. No. 60/662,144 to Huotari et al., filed Mar. 15, 2005.
1. Field of the Invention
The present invention generally relates to a method of selectively forming metal layers, more specifically to a method of selectively forming noble metal layers.
2. Description of the Related Art
A back-end-of-line (BEOL) copper interconnect is formed by a damascene or dual damascene process. A damascene process involves creating interconnect lines by first etching trenches or vias in a planar dielectric layer and then filling the trench or vias with a metal, typically copper. In a dual damascene process, which is a conventional semiconductor metallization process, another level is involved, where a series of holes (i.e. contact holes or vias) are etched and filled simultaneously with the trenches. After filling the trenches and/or vias with a metal, the metal and dielectric are planarized by chemical mechanical polishing (CMP), leaving the metal isolated in the trenches and/or vias. A diffusion barrier layer is typically formed before metal deposition in order to prevent diffusion of metal atoms into the dielectric layer.
A dielectric capping layer over copper (Cu), commonly chemical vapor deposition (CVD) SiN, is often used in interconnect metallization schemes. The copper capping layer is usually deposited after a CMP step, which is accomplished after electrochemical deposition of a Cu blanket film and leaves upper surfaces of Cu lines exposed. If no capping layer is used on top of the Cu lines, they would be in intimate contract with the next interlevel dielectric (ILD). This would lead to two primary modes of reliability failure. The first one is leakage current between adjacent Cu lines as Cu atoms would freely diffuse into the ILD, thus degrading the ILD between the Cu lines. The second one is electromigration (EM) related early failure, as Cu atoms would migrate along the poor quality interface between Cu and a dielectric and voids could be formed in the Cu line when electrical current passes through the Cu line. Even with a conventional Cu capping layer, interface-related diffusion (migration of Cu atoms along the interface between, e.g., a Cu line and a Cu capping layer) is one of the leading mechanisms of Cu interconnect failure.
Additional disadvantage of separate blanket CVD dielectric capping layers is an increase of effective k-value for interlevel dielectrics. CVD SiN layer has higher k-value than ILD. Even low-k capping materials such as SiCN and SiC has still higher k-value than the low-k ILD. Thus, the effective k-value of the interlevel dielectric (ILD) increases by addition of the cap layer, relative to the low-k materials that are used as the main dielectric material.
Additionally, adhesion of copper at the via bottom is critical to interconnect reliability because interconnect failure frequently occurs at a via due to migration of copper atoms due to electrical current (EM) or mechanical stress during thermal cycle (stress-induced voiding or SIV). Dielectric layers can exhibit higher thermal expansion than metal, such that the metal in a via is under compressive stress at elevated temperature and under tensile stress at lowered temperature during thermal cycles. Preventing surface or interface migration of copper, which is related to adhesion strength, is important to enhancing copper interconnect reliability. This is especially true for thinner diffusion barriers formed by atomic layer deposition (ALD). In general, an ALD or CVD layer shows weaker adhesion than a PVD layer. On the other hand, an ALD copper diffusion barrier layer is desirable because the thinner barrier layer allows more space for copper in the same via or trench volume and increases conductivity compared to thicker PVD barriers.
One approach to alleviating the abovementioned problems is by selectively forming a copper capping (reliability enhancing) layer over the copper interconnect and/or via forming. A recent innovation in the field selectively deposits CoWP on the top of Cu lines with a CoWP compound by an electroless plating method (e.g., Valery M. Dubin et al., U.S. Pat. No. 5,695,810 "Use of cobalt tungsten phosphide as a barrier material for copper metallization"; Bill Lee, "Electroless CoWP Boosts Copper Reliability, Device Performance" Semiconductor International Jul. 1, 2004, This has been proven to significantly improve interconnect reliability. However, this method has disadvantages, such as many process steps and severe process control and cost issues.
Thus there is a need for a productive, controllable method for forming reliable interfaces in integrated circuit (IC) metallization.
According to one aspect of the invention, a method is provided for forming a conductive layer in an integrated circuit (IC). The method comprises providing a first surface comprising copper (Cu) and a second surface. The first surface and the second surface are contacted with a vapor phase compound of a noble metal, thereby selectively forming a conductive layer comprising the noble metal on the first surface relative to the second surface. In an illustrated embodiment, the noble metal is selectively formed on metal surfaces relative to surrounding insulators.
According to another aspect of the invention, a method is provided for selectively forming a conductive layer in an integrated circuit. The method comprises providing a first surface and a second surface, the first surface being defined by a metal feature of the integrated circuit, the metal feature comprising copper. The first surface and the second surface are contacted with a vapor phase compound of a noble metal. A replacement reaction is performed, wherein the copper of the metal feature is replaced with the noble metal atoms dissociated from the vapor phase compound of the noble metal, thereby selectively depositing the conductive layer, comprising the noble metal, on the first surface relative to the second surface.
According to yet another aspect of the invention, a method is provided for enhancing reliability of a copper interconnect. The method comprises providing a copper surface and a dielectric surface. The copper and dielectric surfaces are contacted with a vapor phase compound of a noble metal. A reliability enhancing layer of noble metal is formed on the copper surface selectively relative to the dielectric surface by supplying a vapor phase compound of the noble metal. In one embodiment, the copper surface is exposed at the bottom of vias. In another embodiment, the copper surface is the upper surface of an inlaid copper line and the dielectric surface coplanar with the copper surface.
According to yet another aspect of the invention, a metallization structure in an integrated circuit is provided. The structure comprises a metal feature recessed within an insulator. A noble metal layer covers a surface of the metal feature, wherein the noble metal layer is at least partially recessed within the insulator.
According to yet another aspect of the invention, an interconnect circuit is provided. The integrated circuit comprises a copper feature recessed within an insulator. A noble metal layer selectively covers a surface of the copper feature.
Reliability enhancing material can be selectively formed only on exposed interconnect (e.g, copper) surfaces at, for example, a via bottom and/or the exposed upper surface of a copper interconnect, forming metal capping layers. One method is by exploiting faster nucleation on a metal surface relative to an insulating surface, thereby depositing noble metal atoms (e.g., by selective CVD or ALD) on the metal surface. Another method is by replacing copper atoms on an exposed copper layer with noble metal atoms using a replacement reaction. Additional noble metal atoms may be deposited (e.g., by selective CVD or ALD) on the Cu-replacing noble metal layer to increase the thickness of a reliability-enhancing layer. Advantageously, the methods of illustrated embodiments employ vapor phase reactants.
After patterning and etching, the surface of a damascene or dual damascene structure comprises mainly dielectric materials: low-k material, dielectric barrier layer and additional material, such as an etch stopping layer. Before barrier deposition and copper filling, the only metallic surface on the wafer surface exists at the via bottom as copper metal or its slightly oxidized form, depending on the etch and storage conditions.
Reference will now be made to the figures, wherein like numerals refer to like parts throughout. It will be appreciated that the Figures are not necessarily drawn to scale.
In the following embodiments, any element used in an embodiment can interchangeably be used in another embodiment, and any combination of elements can be applied in these embodiments.
During formation of a reliability enhancing layer, a conductive layer, preferably a conductive layer comprising a noble metal, is selectively formed on a first surface relative to a second surface. In some illustrated embodiments (
With reference to
With reference to
During the CVD or ALD of noble metal, the actual deposition is delayed due to slow nucleation of noble metal atoms on dielectric surfaces. The time delay is called an incubation time. CVD or ALD of noble metal on a metal surface shows much shorter or zero incubation time. Thus, noble metal is selectively deposited on top of the lower copper line 306 if CVD or ALD is performed for a duration shorter than the incubation time of the noble metal deposition on any of the ILD layers 302 and 304, and dielectric diffusion barrier layer 303. Slight loss of selectivity, i.e., minute amounts of noble metal deposited on dielectric surface, has little impact on interconnect performance. Minute amounts of noble metal deposited on the walls of the vias and/or trenches are covered by the subsequent conductive diffusion barrier layer 301 and have the slightest impact on the conductivity of the metal interconnects. Minute amounts of noble metal deposited on the top, flat surface of the ILD layer 302 can be removed during a CMP step to removed excess copper and the diffusion barrier layer 301,
With reference to
With reference to
With reference to
With reference to
In some embodiments (not shown), an ALD glue/seed layer may be deposited on top of barrier layer 301, and the vias and/or trenches are subsequently filled with copper by electroplating and/or CVD to form the copper lines and contacts of
In an alternative embodiment, in addition to the reliability enhancing layers 325 (
Advantages of the foregoing embodiments include, but are not limited to, increasing the reliability of a semiconductor device comprising copper (Cu) lines and contacts, inhibiting electromigration and/or stress-induced migration of Cu in vias and trenches, and inhibiting copper contact failure.
The methods for selectively forming noble metal layers on the metal features or lines 306, 317 and 319 using vapor phase reactants are described in more detail below.
Selective Atomic Layer Deposition
In other embodiments, reliability enhancing layers, such as reliability enhancing layers 307 (
At temperatures less than 450° C., noble metals are readily deposited by ALD on metals and metal nitrides. However, they are not readily deposited on lower k materials, such as silicon oxides (including C- and F-doped low k materials) and silicon nitrides. Thus, in particular embodiments, a noble metal film is selectively deposited on a first surface comprising a metal, such as, e.g., copper (Cu), while avoiding deposition on a second surface comprising a lower k material, such as a silicon oxide, silicon nitride, silicon oxynitride, fluorinated silica glass (FSG), carbon doped silicon oxide (SiOC) or material containing more than 50% of silicon oxide. Selective ALD can occur on a partly oxidized copper surface, such as a native oxide of copper, if the copper oxide layer is as thick as several atomic layers or less. In other embodiments, the reliability enhancing layer is selectively formed on a first surface comprising a metal while avoiding deposition on a second surface comprising an insulating material.
ALD type processes are based on controlled, self-limiting surface reactions of the precursor chemicals. Gas phase reactions are avoided by feeding the precursors alternately and sequentially into the reaction chamber. Vapor phase reactants are separated from each other in the reaction chamber, for example, by removing excess reactants and/or reactant by-products from the reaction chamber between reactant pulses. This may be accomplished with an evacuation step using a vacuum and/or an inactive gas pulse or purge.
Briefly, the substrate comprising the first surface and the second surface is loaded in a reaction chamber and is heated to a suitable deposition temperature, generally at lowered pressure. Deposition temperatures are maintained below the precursor thermal decomposition temperature but at a high enough level to avoid condensation of reactants and to provide the activation energy for the desired surface reactions. Of course, the appropriate temperature window for any given ALD reaction will depend upon the surface termination and reactant species involved. Here, the temperature is also maintained low enough to ensure the selectivity of the deposition process. Preferably, the temperature is below about 450° C., more preferably below about 350° C., as discussed in more detail below.
A first reactant is conducted into the chamber in the form of gas phase pulse and contacted with the first and second surfaces on a partially fabricated substrate. Conditions are selected such that no more than about one monolayer (ML) of the precursor is adsorbed on the substrate surface in a self-limiting manner. Excess first reactant and reaction byproducts, if any, are purged from the reaction chamber, often with a pulse of inert gas, such as nitrogen or argon, and/or by use of a vacuum.
A second gaseous reactant is pulsed into the chamber where it reacts with the first reactant bound to the surface. Excess second reactant and vapor phase by-products of the surface reaction are purged out of the reaction chamber, preferably with the aid of an inert gas and/or vacuum. The steps of pulsing (supplying) and purging are repeated until a layer of the desired thickness has been selectively formed on the substrate, with each cycle leaving no more than a monolayer.
As mentioned above, each pulse or phase of each cycle is preferably self-limiting. An excess of reactant precursors is supplied in each phase to saturate the susceptible structure surfaces. Surface saturation ensures reactant occupation of all available reactive sites (subject, for example, to physical size, "steric hindrance" restraints, and/or repulsive interactions) and thus excellent step coverage.
According to a preferred embodiment, a reliability enhancing layer (noble metal layer) is selectively deposited on a first surface relative to a second surface by an ALD type process comprising multiple pulsing cycles, each cycle comprising:
pulsing a vapor phase compound of a noble metal compound (noble metal precursor) into the reaction chamber to form a layer of the noble metal precursor on the first surface of the substrate; purging the reaction chamber to remove excess noble metal precursor and reaction by products, if any;
providing a pulse of a second reactant, such as an oxygen, ozone, ammonia or ammonia plasma containing gas onto the first and second surfaces;
purging the reaction chamber to remove excess second reactant and any gaseous by-products formed in the reaction between the noble metal precursor layer on the first surface of the substrate and the second reactant; and
repeating the pulsing and purging steps until a noble metal layer of desired thickness has been formed.
Suitable noble metal precursors may be selected by the skilled artisan. In general, metal compounds where the metal is bound or coordinated to oxygen, nitrogen, carbon or a combination thereof are preferred. More preferably metallocene compounds, beta-diketonate compounds and acetamidinato compounds are used. In some embodiments a cyclopentadienyl precursor compound is used, preferably a bis(ethylcyclopentadienyl) compound.
When depositing ruthenium thin films, preferred metal precursors may be selected from the group of bis(cyclopentadienyl)ruthenium, tris(2,2,6,6-tetramethyl-3, 5-heptanedionato)ruthenium and tris(N,N′-diisopropylacetamidinato)ruthenium(III) and their derivatives, such as bis(N,N′-diisopropylacetamidinato)ruthenium(II) dicarbonyl, bis(ethylcyclopentadienyl)ruthenium, bis(pentamethylcyclopentadienyl)ruthenium and bis(2,2,6,6-tetramethyl-3,5-heptanedionato)(1,5-cyclooctadiene)ruthenium(II). In preferred embodiments, the precursor is bis(ethylcyclopentadienyl) ruthenium (Ru(EtCp)2).
When depositing platinum films, preferred metal precursors include (trimethyl)methylcyclopentadienylplatinum(IV), platinum (II) acetylacetonato, bis(2,2,6,6-tetramethyl-3,5-heptanedionato)platinum(II) and their derivatives.
As mentioned above, the noble metal ALD process typically comprises alternating pulses of noble metal precursor and an oxygen-containing reactant. The oxygen-containing reactant pulse may be provided, for example, by pulsing (supplying) diatomic oxygen gas or a mixture of oxygen and another gas into the reaction chamber. In one embodiment, ammonia plasma or ammonia is used as a second reactant. In other embodiments, oxygen is formed inside the reactor, such as by decomposing oxygen containing chemicals. Oxygen containing chemicals that can be decomposed in the reactor to produce oxygen include, without limitation, H2O2, N2O and organic peroxides. Mixtures of such chemicals can also be used. In other embodiments, the catalytic formation of an oxygen containing pulse can be provided by introducing into the reactor a pulse of vaporized aqueous solution of H2O2 and conducting the pulse over a catalytic surface inside the reactor and thereafter into the reaction chamber. The catalytic surface is preferably a piece of platinum or palladium.
In preferred embodiments the oxygen-containing reagent comprises free-oxygen or ozone, more preferably molecular oxygen. The oxygen-containing reagent is preferably pure molecular diatomic oxygen, but can also be a mixture of oxygen and inactive gas, for example, nitrogen or argon.
The noble metal precursor employed in the ALD type processes may be solid, liquid or vapor phase material under standard conditions, provided that the noble metal precursor is in vapor phase before it is conducted into the reaction chamber and contacted with the substrate surface. "Pulsing" a vaporized precursor onto the substrate means that the precursor vapor is conducted into the chamber for a limited period of time. Typically, the pulsing time is from about 0.05 to 10 seconds. However, depending on the substrate type and its surface area, the pulsing time may be even higher than 10 seconds. Preferably, for a 300 mm wafer in a single wafer ALD reactor, the noble metal precursor is pulsed for from 0.05 to 10 seconds, more preferably for from 0.5 to 3 seconds and most preferably for about 0.5 to 1.0 seconds. The oxygen-containing precursor is preferably pulsed for from about 0.05 to 10 seconds, more preferably for from 1 to 5 seconds, most preferably about for from 2 to 3 seconds. Pulsing times can be on the order of minutes in some cases, particularly where high aspect ratio openings are on the substrate. The optimum pulsing time can be readily determined by the skilled artisan based on the particular circumstances.
The mass flow rate of the noble metal precursor can be determined by the skilled artisan. In one embodiment, for deposition on 300 mm wafers the flow rate of noble metal precursor is preferably between about 1 sccm and about 1000 sccm without limitation, more preferably between about 100 and 500 sccm. The mass flow rate of the noble metal precursor is usually lower than the mass flow rate of oxygen, which is usually between about 10 and 10000 sccm without limitation, more preferably between about 100-2000 sccm and most preferably between 100-1000 sccm.
Purging the reaction chamber means that vapor phase precursors and/or vapor phase byproducts formed in the reaction between the precursors are removed from the reaction chamber, such as by evacuating the chamber by use of a vacuum (using a vacuum pump or a plurality of pumps) and/or by replacing the gas inside the reactor with an inert gas, such as argon or nitrogen. Typical purging times are from about 0.05 to 20 seconds, more preferably between about 0.5 and 10 seconds, and still more preferably between about 0.5 and 2 seconds.
The pressure in the reaction space is typically between about 0.01 and 20 mbar, more preferably between about 1 and 10 mbar.
Before starting the deposition of the film, the substrate is typically heated to a suitable growth temperature. Preferably, the growth temperature of the metal thin film is below 450° C., more preferably between about 150° C. and about 400° C. The preferred deposition temperature may vary depending on a number of factors such as, and without limitation, the reactant precursors, the pressure, flow rate, the arrangement of the reactor, and the composition of the substrate including the nature of the material to be deposited on and the nature of the material on which deposition is to be avoided. The specific growth temperature may be selected by the skilled artisan using routine experimentation to maximize the selectivity of the process.
The processing time depends on the thickness of the layer to be produced and the growth rate of the film. In ALD, the growth rate of a thin film is determined as thickness increase per one cycle. One cycle consists of the pulsing and purging steps of the precursors and the duration of one cycle is typically between about 0.2 and 30 seconds, more preferably between about 0.5 and 10 seconds, but it can be on order of minutes or more in some cases.
Examples of suitable reactors that may be used for the deposition of thin films according to the processes of the present invention include commercially available ALD equipment such as the F-120® reactor, Pulsar® reactor and EmerALD™ reactor, available from ASM America, Inc of Phoenix, Ariz. In addition to these ALD reactors, many other kinds of reactors capable of ALD growth of thin films, including CVD reactors equipped with appropriate equipment and means for pulsing the precursors, can be employed for carrying out the processes of the present invention. Preferably, reactants are kept separate until reaching the reaction chamber, such that shared lines for the precursors are minimized. However, other arrangements are possible, such as the use of a pre-reaction chamber as described in U.S. application Ser. No. 10/929,348, filed Aug. 30, 2004 and 09/836,674, filed Apr. 16, 2001, incorporated herein by reference.
The growth processes can optionally be carried out in a reactor or reaction space connected to a cluster tool. In a cluster tool, because each reaction space is dedicated to one type of process, the temperature of the reaction space in each module can be kept constant, which clearly improves the throughput compared to a reactor in which the substrate is heated up to the process temperature before each run.
Selective Chemical Vapor Deposition
In a preferred embodiment of the invention, reliability enhancing layers, such as reliability enhancing layers 307 (
The noble metal precursors listed above for ALD can be used for CVD if both of the metal precursor and a reactive gas to aid in releasing noble metal from the precursor are supplied concurrently. A case of Ru layer is described more specifically below. For example, a ruthenium (Ru) reliability enhancing layer, such as reliability enhancing layer 307 (
The CVD reactions are performed at a temperature below 450° C., more preferably between about 150° C. and about 400° C., for a duration of about 1 second to about 1000 seconds. The CVD reactions typically performed at a pressure between about 0.01 mbar and about 50 mbar, more preferably between about 1 mbar and about 10 mbar.
Before noble metal deposition, any copper oxide that may exist at the via bottom may be reduced using reactive cleaning gas, such as NH3, H2, hydrogen radicals or reducing organic molecules, such as alcohols (e.g., C2H5OH) and carboxylic acids (e.g., HCOOH), as described in U.S. Pat. No. 6,921,712. Before noble metal deposition, the substrate may be exposed to gas-discharge plasma of a cleaning or reducing gas, such as NH3, H2, a mixture of H2 and N2, or its mixture with a inert gas such as He or Ar. If oxygen is used in the selective formation of the reliability enhancing layer, the wafer may be subsequently treated with NH3, H2, hydrogen radicals, reducing organic molecules, such as C2H5OH, HCOOH or gas-discharge plasma mentioned above, in order to reduce an oxide of copper, which may be formed during the noble metal deposition. Selective CVD can occur on a partly oxidized copper surface, such as a native oxide of copper, if the copper oxide layer is as thick as several atomic layers or less.
In other embodiments, the noble metal precursor gas is supplied concurrently or intermittently with a metal etchant to enhance the selectivity of formation of the reliability enhancing layer. The reliability enhancing layer is selectively formed on, e.g., the top surface of a copper line or the copper exposed at the bottom of a via without formation on insulating surfaces.
Selective Replacement Reaction
In a preferred embodiment of the invention, reliability enhancing layers, such as reliability enhancing layers 310 (
A Cu replacement reaction is a selective, self-limiting deposition of a noble metal from a reactive vapor phase compound of the noble metal exclusively on an exposed copper formed on a wafer (e.g., vias and/or trenches filled with copper), wherein the metal replaces Cu. The reaction proceeds until the copper atoms defining the surface are inaccessible to the vapor phase compound. There is no deposition of metal on a dielectric layer because the metal replacement reaction,
In a preferred embodiment, M is a noble metal selected from the group of Pt, Au, Ru, Rh, Ir and Pd. In other embodiments, other metals having a higher standard electrode potential than the metal to be replaced can be used. If M has a higher standard electrode potential than Cu, an oxidized form (metal ions) of M (more noble than Cu) can take electrons from Cu (less noble metal). For example, the standard electrode potential E° of Cu/Cu+, Pt/Pt2+, and Au/Au+ are as follows:
L, which is a ligand or a plurality of ligands that are volatile (to be used in a CVD reactor), contains at least one ligand which forms a volatile Cu compound (to remove a by-product containing Cu as a volatile molecule from the surface), and may contain other neutral ligand(s) which can be removed as free molecules. For example, L includes, but is not limited to, beta-diketonate or amidinate ligands which have the generic chemical formula R3C—C(O)—CH—C(O)—CR3 or R—N—C(R)—N—R, wherein R may be an alkyl, hydrogen, or halogen. Examples include, but are not limited to, hexafluoroacetylacetonate (hfac): F3C—C(O)—CH—C(O)—CF3; acetylacetonate (acac): H3C—C(O)—CH—C(O)—CH3; and 2,2,6,6 -tetramethyl-3,5-heptanedionate (tmhd): (CH3)3C—C(O)—CH—C(O)—C(CH3)3 (Sometimes "tmhd" is called "dpm") and N,N′-diisopropylacetamidinato: (CH3)2CH—N—CR—N—CH(CH3)2, where R can be for example, butyl or methyl group.
For example, preferred MLs and replacement reactions include:
1) Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)(1,5-cyclooctadiene)ruthenium (II), [(tmhd)2Ru(COD)]:
2) Ruthenium (III) acetylacetonate, [Ru(acac)3]:
3) Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)ruthenium (III), [Ru(tmhd)3]:
4) tris(N,N′-diisopropylacetamidinato)ruthenium(III), [Ru(iPr-amd)3]:
5) bis(N,N′-diisopropylacetamidinato)ruthenium(II) dicarbonyl, [Ru(iPr-amd)2(CO)2]:
6) 1,5-Cyclooctadiene(acetylacetonato)iridium (I), [(acac)Ir(COD)]:
7) Dicarbonyl(acetylacetonato)iridium (I), [(acac)Ir(CO)2]:
8) Iridium (III) acetylacetonate, [Ir(acac)3]:
9) Platinum (II) hexafluoroacetylacetonate, [Pt(hfac)2]:
10) Palladium (II) hexafluoroacetylacetonate, [Pd(hfac)2]:
11) (Acetylacetonato)bis(cyclooctene)rhodium (I), [(acac)Rh(cyclooctene)]:
12) (Acetylacetonato)bis(ethylene)rhodium (I), [(acac)Rh(CH2═CH2)2]:
13) Acetylacetonato(1,5-cyclooctadiene)rhodium (I), [(acac)Rh(COD)]:
14) Rhodium (III) acetylacetonate, [Rh(acac)3]:
A representative process employing the copper replacement reaction ("replacement process") for selectively forming a reliability enhancing layer (copper capping layer) on an exposed surface of a copper interconnect, such as the reliability enhancing layer 325 shown in
In one embodiment of the invention, a Cu replacement process is implemented on a chemical vapor deposition (CVD) reactor (e.g., cold wall, warm wall, or hot wall type), including a plasma CVD reactor and a thermal CVD reactor. Any CVD reactor can be used without structural modifications. The CVD reactor may be a single wafer type or a batch type, capable of handling many wafers.
A CVD system can be based on a normal CVD setup, which comprises gas inlets, a vacuum chamber, a wafer pedestal, a pressure controller and a pump to provide controlled pressures and atmospheres (below or above atmospheric pressure). Such a system can have and use normal options applicable to surface treatment, such as out-gassing, radical exposures and/or plasmas to remove contaminants and copper oxide (CuO), which is desirable prior to the copper replacement reaction. The replacement reaction can occur on a partly oxidized copper surface, such as native oxide of copper, if the copper oxide layer is only several atomic layers thick.
In a damascene scheme, a dielectric layer was deposited on a wafer and then etched to form vias and/or trenches where a Cu interconnect is formed. Usually a layer with excess Cu is deposited over the vias and/or trenches, such as by electrochemical deposition (ECD). The excess or overburden Cu layer is removed usually by chemical mechanical polishing (CMP), and then a layer of Cu interconnect is finished and the top surface of Cu interconnect is exposed. A wafer comprising the exposed copper interconnect is placed on a support in a vacuum chamber, preferably on a heated pedestal.
In a preferred embodiment, after a wafer is placed on the wafer pedestal (in a single wafer processing example), the chamber is closed and filled with a given gas mixture either inert or reactive at a given pressure (e.g., from about 10-6 to about 5 bar, preferably in the range of about 0.01 mbar to about 20 mbar). The wafer temperature is set from about room temperature to about 450° C., preferably from room temperature to about 400° C. including 200° C., 300° C., and ranges between any two numbers of the foregoing. The temperature can be selected based on the following criteria: 1) Both metal compounds (a noble metal precursor compound and a copper byproduct compound) are volatile at reaction temperature, 2) the temperature is high enough in order for reasonably fast reaction (all Cu atoms exposed on the surface may be replaced within a half hour to be practical), and 3) the temperature is suitable for back-end-of-line (BEOL) metallization application for semiconductor device manufacturing such as a temperature less than 400° C.
After the aforesaid pre-treatment or other pre-treatment to prepare a surface for copper replacement reaction or without such pre-treatment, Cu replacement reaction begins at the abovementioned temperature.
For a copper replacement reaction, the reactor chamber may be adjusted to the pressures in the ranges of from about 10−6 bar to about 5 bar, preferably in the range of about 0.01 mbar to about 20 mbar. The pressure can be such that precursors of low vapor pressure (i.e., vapor phase compound of a noble metal ) can be supplied. A gas mixture set to flow to the process chamber may include only reacting chemicals, comprised of metal and reactive ligands (e.g., Ru(acac)3), or a mixture of the reacting chemicals and a carrier gas, which can be either an inert gas or a mixture of inert gases, as desired.
The flow of reactive chemicals can vary from about 10−3 standard cubic cm per minute (sccm) to tens of standard liters per minute (slm), preferably in the range from about 1 sccm to about 5 slm including 10, 50, 100, 250, 500, 1000, 2500 sccm, and ranges between any two numbers of the foregoing. The flow can be applied either continuously or intermittently while the chamber is either continually or intermittently pumped.
An inert gas can be used separately from the reactive chemicals or together with the reactive chemicals in vacuum processes. The inert gas includes, but is not limited to, Ar, N2, He, or a mixture thereof (preferably, Ar or N2). Any inert gas, which can fill a CVD chamber (e.g., in the range of about 0.5 slm to about 5 slm), purge a CVD chamber (e.g., in the range of about 0.5 slm to about 5 slm), or transport less volatile precursors with it (e.g., in the range of about 0.5 slm to about 5 slm), can be used. The inert gas is not involved in the replacement reaction. If the inert gas is mixed with the reactive chemicals, the flow ratio of reactive chemicals to inert gas may be in the range of 1:100,000 to 10:1, preferably 1:100 to 1:1.
A reactive cleaning or reducing gas for cleaning the metal surface before or during reliability enhancing layer formation includes, but is not limited to, NH3, H2, hydrogen radicals and reducing organic molecules, such as alcohols (e.g., C2H5OH) and carboxylic acids (e.g., HCOOH). Any reactive cleaning gas capable of reducing copper oxide formed on the top surface of Cu (if the copper surface has been exposed to air or an oxygen-containing environment) can be used. A reactive gas (NH3, H2, hydrogen radicals or reducing organic molecules, such as C2H5OH and HCOOH) can be supplied (e.g., in the range of about 0.5 slm to about 5 slm) before supplying vapor phase compounds (deposition precursors), such as a Ru precursor, to prepare a copper surface for substitute reaction by reducing copper oxide to copper. Alternatively, the reactive cleaning gas for oxide cleaning (reduction or etching, preferably reduction) may be supplied continuously with deposition precursors for selective formation by way of a Cu replacement process.
The wafer can also be exposed to appropriate chemicals in sequence with reactive/inert carrier gases in a cyclic fashion (in cycles on the order of milliseconds (ms) to several seconds, or the order of tens of ms to hundreds of ms) to aid removal of reaction by-products (e.g., volatile Cu compounds and free molecules that were bound to the metal as ligands) or make the wafer surface more reactive to the reaction. If reaction by-products are not removed from the surface, they will tend to cover the surface and interfere with the reaction. Removing the by-products will keep the surface as reactive as at the beginning of the process. In a preferred embodiment, the noble metal will cover the Cu surface as reaction progresses. A preferred method is, however, exposing the wafer continually to reactive chemicals with an inert carrier gas under a constant flow for removing reaction by-products from the vicinity of the wafer. A total preferred exposure time can vary from about 0.1 seconds to about 1800 seconds, preferably from about 1 second to about 300 seconds.
For an example, Pd(hfac)2 was used for the replacement reaction. Pd(hfac)2 was vaporized at a temperature between about 40° C. and about 80° C. and carrier by a N2 gas flow between about 50 sccm and about 1000 sccm. A substrate is maintained at a temperature between about 80° C. and about 200° C. and exposed to the Pd(hfac)2 vapor for 1-1800 seconds.
The replacement reaction may continue until it is complete, i.e., all the exposed copper which can react with reactive chemicals has reacted. The reaction is selective, self-limiting formation of a noble metal layer on the copper surface through exposure to a vapor phase compound of a noble metal. Eventually, the Cu surface will be covered completely by the noble metal, deposition precursors cannot reach Cu and the reaction will not occur anymore. That is an advantage of this method, i.e. covering or protecting the Cu surface with the noble (non-corroding) metal without excessive consumption of Cu. In a preferred embodiment, only the noble metal emerges on top of the Cu surface, and all other by-products are removed therefrom in order to keep the reaction progressing until all the Cu on the exposed surface is consumed and replaced by the noble metal.
The resulting noble metal layer is typically thicker than one atomic layer, which is the minimum amount that will cover Cu completely. The maximum thickness may be determined depending on temperature, nature of precursor and other conditions. Smaller or more diffusive precursors and higher temperatures will tend to lead to thicker noble metal layers for the replacement reaction.
In all of the aforesaid embodiments, any element used in an embodiment can interchangeably be used in another embodiment unless such a replacement is not feasible. Further, the present invention can equally be applied to apparatuses and methods.
It will be understood by those of skill in the art that numerous and various modifications can be made without departing from the spirit of the present invention. For example, the capping or reliability enhancing layers can be defined by compounds or alloys of identified noble metals. As another example, the reliability enhancing layers can be selectively formed on the upper surfaces of contacts and landing pads. Therefore, it should be clearly understood that the forms of the present invention are illustrative only and are not intended to limit the scope of the present invention. All modifications and changes are intended to fall within the scope of the invention, as defined by the appended claims.
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