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StateImpact Oklahoma
2:49 pm
Mon December 2, 2013
Oklahoma No. 2 For Earthquakes In Recent Years, Analysis Shows
Oklahoma is four years into a "swarm" of unusual earthquakes, and is now the second most seismically active state in the continental United States, an EnergyWire analysis shows.
Two hundred and forty earthquakes of 3.0 magnitude or greater — the threshold at which people can generally perceive them — have been reported in Oklahoma since 2009. That means 10 percent of the earthquakes in the continental U.S. have occurred in Oklahoma, according to the news service.
EnergyWire's Mike Soraghan reports:
Most of the state's quakes can be grouped into four seismic outbreaks since early 2009 that academics and researchers of various stripes have linked to oil and gas activities, primarily deep underground injection of drilling wastewater.
Drilling activity has been linked to earthquakes in other states, like Texas, Arkansas, Colorado and Ohio, but the link "has been tough to accept for many Oklahomans," EnergyWire reports:
While they're not used to earthquakes here, they're quite accustomed to pump jacks and deep injection wells. Oklahoma is dotted with more than 4,500 such wells. Oil and gas is a pillar of the economy and provides a lot of solid paychecks in the state.
Skeptics note that drilling and injection had been going on for decades before the ground shaking of the past few years.
Oklahoma officials haven't accepted the findings, even when they came from a professor, Katie Keranen at the University of Oklahoma, housed in the same building as the Oklahoma Geological Survey (OGS). Keranen, who has moved to Cornell University, linked the Prague quake to injection.
Some Oklahomans, like Jonny Hickman, told reporter Soraghan they believe there's a link:
"Forty-five years I've lived on this hill," said Hickman, 52. "I never felt anything until they started injecting that salt water."
Others, like Love County Commissioner Herschel "Bub" Peery, share the oil industry's skepticism:
"They're blaming injection wells. I don't really believe it," he said. "A lot of people want someone to blame."
------------------------------------------------------------------------ StateImpact Oklahoma is a partnership among Oklahoma's public radio stations and relies on contributions from readers and listeners to fulfill its mission of public service to Oklahoma and beyond. Donate online.
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Then, she moved to the Vazhuvoor bani, where she trained under guru Ramaiah Pillai's son Samraj. She learnt here that what mattered in dance was not the artiste's figure, but how lightly she carried herself on stage. She learnt about expression. Her dance gained depth. "It was great being part of the Vazhuvoor household. Guru Ramaiah Pillai was a great inspiration and we were treated as family."
"Dance consumed me even as a child. I never missed class. May be, it was initially because of all that dressing up and popularity, but slowly dance came to mean something deeper. I promised myself I would travel abroad only for a dance performance — I ended up visiting Singapore when I was 19!"
Along with dancing she was also fascinated with textiles. She visited looms and mixed and matched threads to come up with gorgeous saris for personal use. Sometime later, her father gave her seed money of Rs. 5,000 and fine-as-silk Suvin yarn woven in 200 counts. The result was a stunning range of Seshraj saris that everyone loved. Jayanthi the designer had arrived.
She performed extensively in Chennai and elsewhere before moving back to Coimbatore to get married. There was a brief break in dance, when kids — Amrutha and Anutham — became her priority. "I sang for them, danced and choreographed in my heart — I engaged with the art differently," recalls Jayanthi. "I never performed then. I believe the guidance of a guru is very essential."
On the office front, she started helping out with Seshraj Apparels before she took over human resources management, designing and optimal utilisation of resources in VTX Industries, which markets home textiles in the U.S., U.K., Europe and Australia. As the business grew, Jayanthi took on a more active role, creating bed linen in soft, textured fabrics and subtle colours. "I'm all for pastels and earthy shades. I love embroidery. I love a hint of grey in all my creations — bed linen should merge with the rest of the décor," she says.
Soon, dance beckoned, and Jayanthi who had been teaching her daughter Amrutha, took on her first formal student, Priya. "Samraj master insisted I pass on the skills I had learnt." She started Shreecharan Academy of Fine Arts in 2002 and Samraj master's son Palaniappan moved here to be part of the institution. Today, about 65 children learn from her. "I hope to revive the guru-shishya parampara and train students to dance with depth. Teaching gives me great satisfaction. When stressed out, I spend some time with the children and feel alive again."
Nothing must come in the way of passion for the arts, she says, recalling how, as a student, she would travel with her gurus to perform at temple festivals. "We would dance on uneven sidewalks to a largely rustic audience. Nothing mattered, neither the second class compartments, nor the dirt."
Jayanthi believes that dance has helped her handle her HR duties better. "The number of people you meet enhances your world view. When dancing in interior regions, our audience comprised thathas and paatis who would chew pugai ilai and spit it out! But they kept perfect beat. When they applauded you, it meant the world."
Recently, Jayanthi danced in a function, to some pasurams . An old friend who saw her after years, was moved. "'I felt I was in a Perumal kovil', she told me. That's the greatest tribute to my gurus," says Jayanthi.
Nothing must come in the way of passion for the arts. Nothing mattered to us, neither the second-class train compartments, nor the dirt

subset: commoncrawl


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Cravaack staff to conduct mobile office in Motley
Cravaack staff to conduct
mobile office in Motley
The staff of Rep. Chip Cravaack, R-Minn., will conduct a mobile office from 2 to 3 p.m. Tuesday at the Countryside Restaurant in Motley. The restaurant is located at 880 Highway 10 S.
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OP Senior Member
Falconara Marittima
Thanks Meter: 11
189 posts
Join Date:Joined: Dec 2010
I've got a phone with a completely broken screen, I can't see anything. I wish to sell it as broken, but first I need to completely erase internal memory: apps, datas, but also personal files such as photos, videos and more. I need a phone back to its stock and out-of-box settings.
The only way I have to do this is using ADB from my PC, using some commands to erase the internal memory. I've read the guide on ADB which is sticked here, but it's not clear for noobs like me, which folders should I erase..
I mean, I should erase every single folder or there is a way to completely erase internal memory? Then I suppose I should install another ROM via ODIN (it's a SGS 3) to have a functional phone.
Can someone help me? Thank you!


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Roseledge Country Inn and Farm Shoppe
No availability found through our partners. Please contact the business directly or check some of our recommended alternatives.
Photos of Roseledge Country Inn and Farm Shoppe
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East and South to the Sea
... and beautiful. They are occupied by a motley collection of local businesses (pet food store, gym,children's clothing outlet, veterinarian), clearly much different from their heyday. Ware was followed by picturesque villages like West Brookfield, with a town green surrounded by white houses and a church.
As we meandered south into Connecticut, the landscape started to change, gentling a bit as we went along. Fewer conifers, towns closer together. I ...
From researchers back to tourists
... around or sitting on the red bleachers. We joined them for a while to people-watch, which was the main activity.
It was a perfect warm evening, but we awoke on Saturday morning to a steady rain. However, we were prepared with an umbrella as we set off to find the ticket booth in Times Square to purchase theatre tickets. Of the many options available we chose to see the musical 'Chicago', the longest-running show ...
Left Boston behind
... each other with opulence. It was a seventy room mansion with sea views hence the name Breakers because of the sea breaking over the shore. It was sold to the equivalent of their National trust in 1972 for $365000 We left behind the Pilgrims and The Mansions and made our way towards Mystic for our overnight stop. Unfortunately we were outside of town so we didn't actually get to see the town of Mystic but the town map looked very ...
So Long New York...howdy Robin Williams
... knowledge of the carvings would put them at risk of vandalism. (Lord knows, when I hear about ancient artifacts the first thing I think of is TNT.) There exists, bizarre stories about people, researchers, historians and scholars, being escorted by locals to the site blindfolded. But even those stories appear to be fading as time and storms weather people's memory and the very rocks they claim to be "sheltering."
Today, I knew we'd be spending zip time in the area, ...
No dogs allowed
We drove from Plymouth, Mass. through Rhode Island and into Connecticut today.
The rains started about 5 miles before we reached the Rhode Island border and didn't quit until we were well into Connecticut. We stopped for the night at a State Park not knowing that dogs are not allowed in ANY state parks in Ct. Unbelievable.
We did find some pretty places in the park, but we certainly didn't hang out for ...


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Established by Aaron Richmond in 1938, the Series has evolved into New England's major presenting organization with over 100 performance and outreach activities annually.
Banjoist Cynthia Sayer is regarded as one of the best in the world, able to perform in virtually any genre. Her accolades include the National Banjo Hall of Fame, a New York Philharmonic appearance, and performing for two US Presidents. She's played with director Woody Allen's jazz band for over ten years, and on this week's show Sayer diplays a fresh take on an old time sound.
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1967 Ford Mustang Official EleanorProfessional rebuilt 5.0L roller motor. Tremec T-5 manual 5 speed transmission. Ford 9" Rear end with 3.50 gears. Painted Eleanor... More
1966 Ford Mustang Fastback Freshly rebuilt 289 cui small block Ford. Cruise-o-matic automatic floor shift transmission with full console. Painted Black with Red stripes... More
More details on the beautiful 1970 Grabber Blue Mach One Mustang coming soon. Steve - 281-531-9090 or [contact seller] ... More
1969 Ford Mustang Mach 1 finished in Candyapple red with a matching dark red interior. Our Mach 1 is powered by a 428 Cobra... More
Just in! Call or visit our website for more information.... More
A 1965 Shelby GT 350 'R' Model Race Car clone presented just as the famous Charlie Kemp #23, tremendous Driven Show presentation with fantastic... More
1965 Ford Mustang 2 Dr Fastback289 cui engine. Automatic Transmission. Gold Exterior. Tan & Black Classic Pony bucket seat interior with 2+2 rear fold... More
1965 Ford Mustang coupe Rare K Code GT packageFrame-Up Restoration done right every nut bolt.289 CID V-8 Engine still has the original k code... More
Smooth running 289 cu. In. V8 engine, Chrome dress-up kit dual exhaust, Automatic transmission, Floor mounted shifter, Power steering, Rare Ivory vinyl bench... More
Please visit our website at www.mwcarline.com, for more pictures. You can reach us at anytime by calling 713.781.0444 or email us at [contact seller] . ... More
1999 Ford Mustang Convertible, 35th Anniversary Package. For 1999, the Mustang received Ford's New Edge styling theme with sharper contours, larger wheel arches, and... More
1967 Ford Mustang Sport Coupe ID# 7R01T198073 23,135 Original Miles! Original paint, Original engine, Original upholstery, etc......... More
1966 'A' CODE MUSTANG CONVERTIBLE, CandyApple Red restored as driven show car, a hard to find 'A' code convertible is most desirable, a very... More
The Shelby is a higher performance variant of the Ford Mustang, which was built by Shelby American from 1965 to 1967. The 1965–1966 cars were... More
1970 Ford Mustang Mach 1. This car has been completely rebuilt (frame off restoration), $78,000 invested into the build alone, less than 200 miles... More
1965 FORD MUSTANG CONVERTIBLE 289 CU IN.V8-AUTO-AIR SOUTHERN CAR YEAR: 1965 MAKE: FORD MODEL: MUSTANG BODY:... More
This 1990 Ford Mustang 2dr Kelly Python Convertible features a 5.0L 8 CYLINDER 8cyl Gasoline engine. It is equipped with a 5 Speed Manual... More
Lime Green Metallic on white ?Rhino/Corinthian? vinyl. 4 speed ?top loader? manual with Hurst shifter. Clean and rust free Georgia car brought to Canada... More
This all original example has been pampered from new, having only travelled 20,533 miles from new. This ultra low production Mustang is completely original... More
Details on this 1966 Ford Mustang Red/Black Convertible with RARE 4-speed coming soon!! Steve - 281-531-9090 or [contact seller] ... More
2008 Ford Mustang Roush 427-R Trak Pak This 2008 Ford Mustang isn't just your regular run-of-the-mill pony car. No, this one is special. This is... More
1973 Ford Mustang The 1973 Mustang was the last of the first generation of America's most iconic Pony Car. Own this driver-quality example today and... More
1970 Mustang Convertible Nice solid convertible!!! New 15" wheel and tires. Upgraded front disc brakes. 302 V8 Automatic Transmission Power Convertible Top Rare interior map light option. Runs and Drives Great For more... More
For many more pictures of this 1967 Mustang Fastback, please go to our website forristalls.com. This beautiful 1967 Mustang Fastback spent 35 years in Moosepark,... More
This 1966 Ford Mustang Convertible features a 289 V-8 8cyl Gasoline engine. It is equipped with a 3 Speed Automatic transmission. The vehicle is... More
This 1970 Ford Mustang Convertible features a 351 2-V V8 8cyl Gasoline engine. It is equipped with a 3 Speed Automatic transmission. The vehicle... More
This 2007 Ford Mustang 2dr Shelby GT Coupe features a 4.6L 8 CYLINDER 8cyl Gasoline engine. It is equipped with a 5 Speed Manual... More
1965 Ford Mustang A Code Convertible FOR MANY MORE PICTURES OF THE BEAUTIFUL A CODE CONVERTIBLE, PLEASE GO TO OUR WEBSITE FORRISTALLS.COM. I spent months trying... More
1988 Ford Mustang GT Are you looking for a clean fox body Mustang with everything you need to go fast and have a good time?... More
Please contact one of our expert sales consultants for the most complete information on this beautiful vehicle. They will be happy to answer any... More


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Uniflame Tampico Brush HeadItem # HN-ES503
- Molded plastic fireplace brush head
- Natural tampico brushes in black
- Replacement brush head - handle sold separately
- Choose the size that fits your brush
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Special Report: Vision and Dental Benefits — More to See, More to Chew On
March 26, 2015
While the national unemployment level has slowly fallen from its peak of 10 percent in 2009, the number of unemployed people far outdistances the number of hires. Just how dire the situation is today can be seen by comparing the size of the gaps for the two most recent recessions. Following the recession in 2000, for every 10 hires, 14 people remained unemployed. Today, following the 2008-09 recession, for every 10 hires, 35 people remain unemployed.
Workforce Management, May 2012, p. 19


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St. Philip's Spelling Bee winners
Eighth-grader Mariah Graves correctly spelled two successive words to win the 2010 St. Philip's School Spelling Bee.
Sixth-grader Brody Wilander placed second.
Students in grades 5-8 took a written spelling test in January to be eligible to compete in the Spelling Bee. Fifty-eight students competed in the first oral round and 15 advanced to the final competition on Feb. 18.
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MicroEdge, Inc. has released a version of SlickEdit for Linux. SlickEdit is a character-based programmer's editor running on a variety of platforms and it should appeal to developers who work in more than one environment. The current list price is US $195.
For a programmer arriving from a DOS environment, SlickEdit provides a comfortable transition. Instead of arcane keystrokes and endless keyboard remapping, the user is presented with an unobtrusive menu system which may be later discarded. Pressing F1 brings up the help system and the behavior of particular keys, such as insert and delete, act in the manner to which the DOS user is accustomed.
SlickEdit can be considered a fairly complete editor in that it provides most of the features necessary for productive coding. It has full undo and redo capability, even past successive file saves. Multi-file search and replace is supported along with regular expression searches. Cut and paste operations may be performed on marked lines, blocks, and columns. Multiple clipboards of marked text are maintained. A Rexx-like macro language provides over 850 callable editor functions.
A single diskette installs SlickEdit onto /usr/bin and /usr/lib/slick by default, consuming about 2Mb of disk space. Less space is necessary if you choose not to install all the macro files. The SlickEdit executable is only 260K. A 400-page perfect bound manual is included with the application.
There are three ways you may wish to use SlickEdit on a Linux system: console, terminal, or xterm. Each has its own peculiarities and you will probably want to create a separate keyboard description file for each. A key mapping utility called genktab allows you to tell SlickEdit what to expect when a key is pressed. A readable keyboard description file is compiled into a ".tab" file. Another utility, showkey, is provided to help you determine what sequences your terminal is generating.
Most of the common terminal types are included in the default keyboard description file, including vt100 and xterm. To work with xterm, the file /usr/lib/slick/xdefault must be appended to the .Xdefaults file in your $HOME directory. A special xs script is included to avoid the initial configuration hurdles. Under xterm the window can be dynamically resized with the mouse, but the mouse cannot be used to manipulate text within the screen. MicroEdge has stated they intend to add mouse support for Unix in a future version of SlickEdit.
Under console mode, SlickEdit is virtually indistinguishable from its DOS version. The Alt-F1 thru Alt-F4 keys may need to be remapped to provide functions such as MOVE-EDGE and DELETE-ADJACENT, since most Linux systems use these key combinations to provide virtual terminals. You also can perform these operations from the SlickEdit menu or configure the Alt key for a non-console terminal as described below.
Setting up a terminal to act the way a normal DOS user expects is challenging, especially for a text editor. The Alt key has no counterpart with most terminals in standard use today. MicroEdge works around this problem by defining the backtick (`) key as the Alt key for a non-console, non-xterm terminal. In practice this adaptation is easy and natural to use. To enter an actual backtick, a ^Q ` sequence is entered.
Another potential problem with using a terminal is common to many Unix applications^-namely the confusion resulting in sending an escape sequence (say, F1 under ANSI emulation) and a literal escape (0x1b) character. This is not peculiar to either Linux or SlickEdit, but it is more noticeable in text editing applications where you're likely to be pounding the arrow keys a lot. SlickEdit attempts to alleviate this by allowing the user to specify a delay for an ambiguous key sequence. On other Unix systems I have noticed that this is not always 100% successful, especially if you are running telnet through through heavily loaded systems. However, my limited use on Linux uncovered no problems.
If you purchase SlickEdit, you have, at a minimum, two expectations: ease of use and technical support. After configuration, SlickEdit has very few surprises. Getting to the point that you are satisfied with your configuration, however, may require a phone call to Technical Support. My prior experience with MicroEdge's support has been very good, and this time was no exception. Basically, I wanted true 8-bit line drawing characters rather than the stodgy hyphen, plus, and vertical bar (- + |) symbols displayed. My call was returned in 30 minutes. After ascertaining what I needed, the specialist offered to e-mail me the necessary file, with the assurance that I could call him back if there were any further problems. My ANSI.DAT file arrived later that day and everything worked as expected. MicroEdge also supports a CompuServe forum: "go slickedit".
My overall impression is that MicroEdge has done an excellent job in porting SlickEdit to Linux. I have written many lines of code over the past two years with the SlickEdit family of editors on a variety of platforms. There are certainly other freeware alternatives to the venerable vi and Emacs editors, but I find my level of productivity is raised (and frustration lowered) by using SlickEdit.
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text:
Five days after getting temporarily removed from his job as closer, and two days after throwing a bullpen to tweak his mechanics, Rafael Soriano appeared in the Nats' 6-2 loss to the Braves on Sun
With their series against the Braves in hand, and an 11-game road trip up ahead, the Nationals are resting both Anthony Rendon and Ian Desmond on Wednesday with minor ailments.
We welcomed in two guests on this week's episode of Baseball in the District, CSN Insider Mark Zuckerman and Kevin McAlpin of the Braves Radio Network.
GAME IN A NUTSHELL: With a chance to put another nail in the Braves' coffin, the Nationals broke out the hammer right away tonight.
Seven of the Nationals' 19 remaining games are against the New York Mets, a team that just happens to have shut down its best player for the rest of the season.


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A method of preparing an active surface layer on a semi-insulating GaAs substrate comprising the steps of ion implanting a surface layer with silicon to form an n-type active layer and ion implanting a buried diffusion layer beneath the active layer with boron to prevent defects in the substrate from influencing the active region. The method is particularly useful for GaAs MESFETs.
1. A method for preparing GaAs substrates for electronic fabrication, comprising the steps of:
implanting silicon atoms into an upper layer of a substrate of semi-insulating GaAs; and
implanting electrically inactive atoms into a buried region substantially underlying said upper layer;
wherein the concentration of said implanted silicon atoms has a maximum in said upper layer and the concentration of said implanted electrically inactive atoms has a maximum in said buried region and the concentrations of said implanted silicon and electrically inactive atoms are equal at a point between said maxima.
2. A method for preparing GaAs substrates as recited in claim 1, wherein said electrically inactive atoms are boron atoms and further comprising the step of annealing said substrate implanted with silicon and boron.
3. A method for preparing GaAs substrates as recited in claim 1, wherein said silicon implantation occurs subsequently to said boron implantation.
4. A method for preparing GaAs substrates as recited in claim 1, wherein said electrically inactive atom implantation occurs subsequently to said silicon implantation and further comprising a step of annealing said substrate at a temperature between 200� C. and 500� C. between said silicon and electrically inactive atom implanting steps.
5. A method for preparing GaAs substrates as recited in claim 2 wherein:
said silicon implanting step implants approximately 4.2�1012 silicon atoms per cm2 with an initial energy of approximately 200 keV; and
said boron implanting step implants approximately 7�1012 boron atoms per cm2 with an initial energy of approximately 270 keV.
6. A method for preparing GaAs substrates as recited in claim 2, wherein said boron implantation occurs subsequently to said silicon implantation and further comprising an annealing of said substrate at a temperature between 200� C. and 500� C. between said silicon and boron implantations.
7. A method for preparing GaAs substrates as recited in claim 6, wherein said annealing comprises a deposition of a cap of Si3 N4 over said substrate at an elevated temperature.
The invention relates generally to GaAs semiconductor devices and it relates, in particular, to a method of making n-type surface regions on GaAs.
Semiconductor devices made of GaAs show much promise for superior performance and the technology for GaAs has been advanced to the point where microwave and digital devices have become commercially available. Ion implantation into GaAs has become the preferred method for doping this material. However, the fabrication of n-type regions in GaAs has always presented difficulties. The conventional method of fabricating ion implanted n-type regions for FET GaAs devices is to implant doping atoms of silicon or selenium into semi-insulating GaAs substrates. The implanted substrate is then annealed at elevated temperature to remove the radiation damage caused by the energetic ions during implantation. This annealing moves the implanted doping atoms into substitution lattice sites to electrically activate the GaAs. Since the implanted doping atoms are embedded in the host substrate, the electrical properties of the implanted region are dependent upon the quality of the substrate in terms of residual impurities, lattice defects and stoichiometry. The disadvantage of this method is the absence of control in producing predictable electrical properties of an n-type implanted layer on semi-insulating GaAs. At the present time, it is required that substrates by pre-selected based on positive results on substrates from a given ingot of GaAs. This procedure is called ingot qualification. Using this procedure, most manufacturers of semi-insulating GaAs substrates measure resistivity and carrier mobility as part of qualifying substrates for direct ion implantation. However, these measurements are subject to error in interpretation and do not necessarily guarantee successful ion implantation results. Furthermore, only a fraction of the GaAs ingots pass the test so that the yield is correspondingly lowered.
An alternative procedure is to epitaxially grow a high resistivity buffer layer on top of a semi-insulating GaAs substrate and then to implant an active region into the buffer layer. This approach reduces the influence of the substrate and thus has the potential for increasing the yield. It relies on the fact that the implanted ions are embedded in higher quality epitaxial GaAs. However, this approach increases the complexity of the substrate fabrication process and produces an additional uncertainty for the quality of the material in which the ion implantation occurs. Because buffer layer epitaxial material is of a lower resistivity than semi-insulating bulk material, potential isolation problems may occur between devices on the same epitaxial layer when planar fabrication is used. In addition, the semi-insulating bulk substrate continues to influence the quality of the epitaxial buffer layer.
It is believed that the fundamental problem with ion implanting bulk GaAs arises during the implant anneal. The ion implantation produces a disordered surface region that is either amorphous or at least consists of regions of amorphous material. In the anneal following the implantation, the disordered region epitaxially recrystallizes on the undisturbed substrate. However, because of the necessarily high temperatures involved, impurities, vacancies and other defects from both the surface layer as well as the substrate tend to be swept toward the surface, the region which will become electrically active. Thus the quality of the GaAs substrate is critical to the electrical properties of the implanted GaAs surface. Furthermore, the high annealing temperatures cause the distribution of implanted dopant atoms to broaden. The low value of the gradient of this distribution appears to be strongly dependent upon the quality of the substrate.
Accordingly, it is an object of this invention to provide an n-type surface region in GaAs that is not strongly dependent upon the quality of the substrate.
It is a further object of this invention to provide a method for implanting n-type GaAs regions in wich the implant anneal does not bring bulk defects to the surface.
It is yet a further object of this invention to provide a method of implanting n-type GaAs that has a steep and reproducible gradient.
The invention can be summarized as a method of producing surface n-type regions in GaAs by implanting the surface with silicon and implanting beneath the silicon a buried diffusion barrier of boron. After both the silicon and boron have been implanted, the GaAs is annealed to remove the implantation damage and the diffusion barrier of boron isolates the silicon doped region from the substrate.
FIG. 1 is a cross-sectional view of a simplified GaAs MESFET;
FIG. 2 is a graphical illustration of the doping profiles and carrier concentration for one embodiment of the invention; and
FIG. 3 is a graphical illustration of the doping profiles and carrier concentrations for a second embodiment of the invention.
FIG. 4 is a cross-sectional view of a GaAs MESFET built according to this invention.
FIG. 1 illustrates in cross-section a simplified metal-semiconductor field-effect transistor (MESFET) made from GaAs. The device is formed on a substrate 10 of semi-insulating GaAs which, as was described previously, may itself be a surface layer. On top of the substrate 10 is formed a relatively thin surface layer 12 of n-type GaAs, which is the active region of the device. A metallic gate electrode 14 formed over part of the surface layer 12 creates a Schottky barrier at the interface. A source electrode 16 and a drain electrode 18 establish ohmic contact to the GaAs. Voltage applied to the gate electrode 14 can hold the region of the surface layer 12 beneath the gate electrode 14 near full depletion and variations of the gate voltage will cause controlled variations of the resistance between the source and drain contacts 16 and 18. In a low noise amplifier design, the bias voltage is put near full depletion, while in a digital transistor the voltage swing on the gate electrode 14 produces large variations in the source-to-drain resistance.
GaAs MESFETs are typically fabricated with the surface layer 12 being formed by ion implantation. However, as previously noted, the substrate 10 in conventional GaAs MESFETs has a major effect upon the electrical properties of the surface layer 12.
According to the invention, a wafer of semi-insulating GaAs is cut from an ingot grown undoped by the LEC (liquid encapsulated Czochralski) method. This wafer is used as a substrate. The single crystal GaAs wafers have a resistivity equal to or greater than 107 Ω-cm, and therefore are semi-insulating, and a mobility of 3,700 cm2 V-1 s-1. The wafer has a polished surface and is etched in a solution, such as NH4 OH:H2 O2 :H2 O, to remove surface crystalline damage by dissolving at least 2 μm of GaAs. The wafer is rinsed thoroughly in deionized water followed by immersion in HCl to remove the native oxide. The wafer is again rinsed thoroughly in deionized water and dried in pure nitrogen gas.
The wafer is then ion implanted with boron atoms 11 B+ at 270 keV to a dose of 7�1012 ions/cm2. This ion implantation produces a boron profile illustrated by curve 20 in FIG. 2 according to the Lindhard-Scharff-Schiott (LSS) theory. Silicon atoms 29 Si+ are subsequently implanted at 200 keV and 4.225�1012 ions/cm2 to produce a calculated silicon profile 22 overlying the boron profile 20. The substrate is then capped with approximately 90 nm of Si3 N4 deposited at 400� C. by the plasma enhanced chemical vapor method and furnace annealed at 850� C. for 20 minutes in a forming gas atmosphere to anneal the implantation damage. The Si3 N4 cap is necessary to prevent the decomposition of the GaAs at the elevated temperature implant anneal which electrically activates the silicon to form an n-type GaAs active layer.
The carrier profile 24 is then experimentally determined after completion of wafer fabrication by capacitance versus voltage measurements. It is seen that the peak of the silicon profile 22 is somewhat reduced as measured by the carrier profile 24. The width of the silicon profile 22 or the carrier profile 24 defines the surface layer 12, illustrated in FIG. 1. However, away from its peak, the silicon profile 22 closely agrees with the carrier profile 24, indicating that the boron profile 20 formed below the surface layer 12 acts as a buried diffusion barrier preventing significant interaction between the substrate 10 and the surface layer 12.
In an alternate embodiment of the invention, the order of implantations of the boron and the silicon is reversed and a partial anneal is performed between the implants. The wafer picked for the second embodiment was adjacent in the GaAs ingot to the wafer in the first embodiment. First the wafer is implanted with silicon at 200 keV to a dose of 4.225�1012 ions/cm2. This produces a silicon profile 26 shown in FIG. 3. Then the wafer is capped with 90 nm of Si3 N4, which operation is performed at 400� C. thus providing partial annealing. Then boron is implanted at 270 keV to a dose of 7�1012 ions/cm2 to produce the calculated boron profile 28 underlying the silicon profile 26. This boron profile 28 differs from the boron profile 20 of FIG. 2 only in being shifted towards the surface by the energy loss in the Si3 N4 cap. Then the wafer is furnace annealed at 850� C. for 20 minutes to anneal out the implantation damage and to activate the silicon. The resultant carrier profile 30 was experimentally determined by the same capacitance-voltage technique. It is seen that the carrier profile 30 is somewhat lower than the carrier profile 24 of the previous embodiment but is considerably sharper.
From a comparison of the boron profiles 20 and 28 with the carrier concentration profiles 24 and 30, it can be seen that the boron is not itself electrically active, which result is expected from an inspection of the periodic table. Instead it appears that the boron enhances the silicon activation on the Ga sites in the region of low silicon density. It appears that the boron interacts with arsenic vacancies in a way that minimizes the amphoteric nature of silicon doping in GaAs.
The carrier profile 24 for the first embodiment illustrated in FIG. 2 shows good agreement with the theoretical silicon distribution 22 for concentrations below approximately 7�1016 cm-3, where the boron-to-silicon ratio is greater than 0.3. The deviation from theory increases as this ratio becomes larger. As the boron concentration falls off towards the surface, the effect on the silicon profile is reduced. Since the peak boron concentration lies below the implanted silicon, the boron could also be acting as a buried diffusion barrier to out-diffusing arsenic vacancies from the substrate, thus enhancing electrical activation in the tail of the silicon profile 22. The maximum effect from a diffusion barrier should occur at the interface between the silicon and the substrate because the boron concentration increases with depth into the substrate. It should be noted that in material grown in an arsenic-rich condition, low arsenic vacancy concentration contributes to good thermal stability and high-quality ion implanted layers.
The carrier profile 30 shown for the second embodiment in FIG. 3 illustrates a different behavior of the implanted boron. In this case, the silicon implanted region undergoes a partial anneal during the Si3 N4 deposition at 400� C. for about 20 minutes. It is believed that similar annealing could be performed between 200� C. and the GaAs decomposition temperature of 500� C. The measured profile 30 is also reduced in thickness by approximately the difference in penetration depth of the two boron distributions 20 and 28. The peak of the carrier distribution 30 is also reduced. Boron in the first embodiment affects the impurity profile in a different way than in the second embodiment. Hysteresis was observed in the capacitance-voltage measurements of the second embodiment at a reverse bias greater than 3 V, corresponding to a carrier concentration of less than 7�1016 cm-3. This observation implies that the boron that was implanted into a partially annealed implanted layer produces traps which reduce free carriers in the tail of the silicon profile 26. However, the boron-induced traps are stable after a subsequent high temperature anneal at 850� C.
The wafers fabricated according to both the first and second embodiments of the invention were used to fabricate GaAs MESFETs with nominal 1�500 μm gates and 5 μm channel lengths. A reference wafer was also prepared from the same GaAs ingot but which did not have any boron implant. The reference wafer was prepared just as were the wafers of the first two embodiments and was implanted with silicon at 200 keV to a dose of 3.74�1012 cm-2 and 75 keV to a dose of 1�1012 cm-2. Because the lower energy silicon implant on the reference wafer implants silicon away from the substrate interface, the extra silicon implant should not affect the phenomena occurring at the interface.
The MESFETs fabricated on the various wafers all have the cross section illustrated in FIG. 4. A surface layer 40 of silicon-doped GaAs and an underlying barrier layer 42 of boron-containing GaAs (omitted from the reference wafer) are formed on top of a semi-insulating GaAs bulk substrate 44 by the methods previously described. The Si3 N4 cap is removed in a hydrofluoric acid solution. Individual transistor active areas are delineated by isolation regions 46 and 48 formed by proton bombardment using photo-resist masking. The isolation regions 46 and 48 surround the channel areas of the individual transistors. If the silicon and boron were selectively implanted only into the indicated regions 40 and 42, no isolation regions 46 and 48 are needed because the semi-insulating substrate 44 would then extend to the surface.
The wafer is then patterned with photo-resist followed by an evaporation of an alloy of AuGeNi to form a source contact 50 and a drain contact 52. These contacts 50 and 52 are alloyed at 500� C. for one minute to form n+ source and drain regions in the surface layer 40 directly underlying the contacts 50 and 52.
The wafer is again patterned with photo-resist to define the gate area between the source and drain. The gate area is recessed by etching in a solution, such as NH4 OH--H2 O2 --H2 O, to remove a thickness of the GaAs surface layer 40 approximately equal to the depth of the peak carrier concentration of the silicon implant. This etching adjusts the transistor source-drain saturation current and channel pinch-off voltage. The wafer is then thoroughly rinsed in deionized water and dried with high purity nitrogen gas.
Then a 30 nm thick Schottky electrode 54 of chromium is evaporated into the recess followed by a 500 nm thick bonding region 56 of gold.
The MESFETs fabricated by the above method on the various wafers were measured for transconductance and for noise figure (degradation in signal-to-noise ratio upon amplification) and gain at microwave frequencies. These results are presented in Table 1 for the reference wafer, the pre-anneal wafer (second embodiment) and the post-anneal wafer (first embodiment).
TABLE I______________________________________GaAs MESFET Performance Reference Pre-Anneal Post-Anneal______________________________________Noise Figure 2.23 1.55 1.68at 4 GHz (dB)Associated Gain 9.7 11.1 11.3at 4 GHz (dB)Noise Figure no 2.9 2.8at 12 GHz (dB) measurementAssociated Gain no 6.0 7.6at 12 GHz (dB) measurementTransconductance 28 42 42at IDSS (mS)Transconductance 10 24 24at Low NoiseBias (mS)______________________________________
The microwave measurements were performed at 4 GHz and 12 GHz. For all measurements, the wafers with the buried boron diffusion barrier of this invention showed improved characteristics. The transconductance was measured at both IDSS (the saturation drain-source current at zero gate voltage) and at a low noise bias of 10 mA. In all cases, the wafers with the buried boron diffusion layer of this invention showed improved electrical characteristics over the reference wafer. Much of the above-presented data appeared in an article by the inventor, entitled "Ion implantation of Boron in GaAs devices", appearing in Comsat Technical Review, Volume 13, Number 2, Fall 1983, at pages 437-450.
The invention appears particularly important for operation at the low noise bias point for which the channel is almost completely pinched off to a point of the silicon distribution that is, for example, 10% of the peak value. Thus, the characteristics of the tail of the silicon distribution must be tightly controlled for predictable signal swings about the bias point.
It is believed that a modification of the silicon profile by an implanted boron diffusion barrier will also have application in digital integrated circuits of GaAs, where accurate control of pinch-off voltage is important. The sharp and reproducible gradient provided by this invention, particularly its second embodiment, should allow switching within a fixed voltage increment of 30 to 50 mV.
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Voice - Talent - Female, For charity video
Closed - This job posting has been filled and work has been completed.
Job Description
Looking for voice-talent to narrate, in English, a short charity video montage.
It is the event's 10th anniversary, and they are celebrating a milestone and at the same time, encouraging others to join the cause to help the less fortunate.
Approx. 4 minutes in duration
Soothing, Clean, Female voice preferred.
Please send over your voice-samples for our selection, the script is ready for recording!
Skills: video, english


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I suppose I should give kudos to the old codger for finally recognizing that evolution and Christianity are perfectly compatible.
I will take exception to this however:
"The Big Bang, that today is considered to be the origin of the world, does not contradict the creative intervention of God; on the contrary, it requires it. Evolution in nature is not in contrast with the notion of [divine] creation because evolution requires the creation of the beings that evolve."
Neither evolutionary theory, nor the Big Bang theory, in any way require any divine being, they get on just fine by themselves thank you.
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Pope Francis: Evolution and Big Bang Theory Are Real
Big Bang theory and evolution in nature "do not contradict" the idea of creation, Pope Francis has told an audience at the Vatican, saying God was …
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Post imported by Google+Blog. Created By Daniel Treadwell.


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Vans Geo Floral Trucker Hat
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A geo floral print canvas bill and padded front panels are finished with a Vans "Off The Wall" logo patch embroidered at the front for a timeless look.
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- Article
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- Metrics
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About the Authors
- Michael Haase, Anja Haase-Fielitz
- Department of Nephrology and Hypertension, Diabetes, and Endocrinology, Otto-von-Guericke-University Magdeburg, Germany
- Michael Plass, Hermann Kuppe
- Department of Anesthesiology, The German Heart Center, Berlin, Germany
- Roland Hetzer
- Department of Cardiothoracic Surgery, The German Heart Center, Berlin, Germany
- Claire Hannon, Patrick T. Murray
- Nephrology and Clinical Pharmacology, University College Dublin School of Medicine and Medical Science, Dublin, Ireland
- Michael J. Bailey
- The Australian and New Zealand Intensive Care Research Centre, Department of Epidemiology and Preventive Medicine, Monash University, Melbourne, Australia
- Rinaldo Bellomo
- Department of Intensive Care, The Austin Hospital, Melbourne, Australia
- Sean M. Bagshaw
- Division of Critical Care Medicine, Faculty of Medicine and Dentistry, University of Alberta, Alberta, Canada
Corresponding Authors
- Email: firstname.lastname@example.com (AHF)
- Email: email@example.com (RB)
Competing Interests
MH and RB hold a patent on the use of sodium bicarbonate infusions to prevent acute kidney injury. MH, SMB, and PM received lecture fees from companies (incl. Abbott Diagnostics, Alere) involved in the development of neutrophil gelatinase-associated lipocalin as renal biomarker. The authors declare no other competing interests.
Author Contributions
Conceived and designed the experiments: MH AHF RB. Performed the experiments: MH AHF RB PM SMB. Analyzed the data: MJB AHF. Contributed reagents/materials/analysis tools: MH AHF RB. Wrote the first draft of the manuscript: MH AHF. Contributed to the writing of the manuscript: MP HK RH CH PM MJB RB SMB. ICMJE criteria for authorship read and met: MH AHF RB MP HK RH CH PM MJB SMB. Agree with manuscript results and conclusions: MH AHF RB MP HK RH CH PM MJB SMB. Enrolled patients: MH AHF RB SMB PM.


text:
EVENING REPORT (5pm AEST)
The Australian share market was sold off today, meaning that the gains for the month were virtually wiped out. The All Ordinaries Index (XAO) closed lower by 25.4 points or 0.5 per cent today to 5473.8.
Over the course of May, the All Ords closed higher by just 0.1 per cent.
Mining stocks were once again the biggest drag today as the price of iron ore continued to fall, closing below US$96 a dry tonne. Shares in Fortescue Metals Group (FMG) closed lower by almost 3 per cent to $4.41 while BHP and RIO were both more than one per cent weaker.
Southern Cross Media Group (SXL) issued a profit warning today, citing lower ratings at its metropolitan radio station and its Network Ten (TEN) interests for a decline in revenue. SXL is expecting full year underlying NPAT to be down 10 per cent on last year's result of $89 million. SXL shares closed steady at $1.095 today but are down 35 per cent on the year.
Rare earths miner Lynas Corp (LYC) fell 18 per cent to 14c after coming back online following its share purchase plan and placement offer. New shares were offered at 11.3c under the plan.
Billionaire Premier Investments (PMV) Chai Solomon Lew has bought 3.5 million David Jones (DJS) shares or around 0.65 per cent of the company. Earlier this month the Foreign Investment Review Board (FIRB) gave the go-ahead for South African retailer Woolworths Holdings to take over DJS in a $2.15 billion deal. DJS closed higher by 1.5 per cent to $4.04 today while PMV was down 1.4 per cent to $8.78.
In economic news, private sector credit (lending) rose by 0.5 per cent in April after a 0.4 per cent lift in March. Annual credit growth rose from 4.4 to 4.5 per cent - the strongest growth in five years.
Overall housing credit lifted by 6.1 per cent on a year ago, with investor housing finance up 8.2 per cent - marking the strongest annual growth in 3½-years. Business and consumer credit were more mixed.
Term deposits fell by 1.2 per cent over the year - the biggest decline in 11 years.
On the market overall, a total of 2.2 billion shares changed hands, worth $7.9 billion. 479 were up, 481 were down and 389 were unchanged.
No major economic data is due for release in the US tonight.
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Boeing and Aerospace News
The latest Boeing and aerospace news, including updates about the Boeing 787 Dreamliner, 747-8 and 737, Airbus A380 and A350, the anticipated Boeing 797 and Boeing jobs and layoffs
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How Britain's de Havilland Comet stumbled and Boeing's 707 won out
Britain's de Havilland rolled out its Comet prototype in 1949 and got the world's first jet airliner into service in 1952. Boeing's 707 reached those milestones in 1954, but ultimately won the market. Seattle's Museum of Flight has scheduled a discussion on the birth of the post-war jet age for Saturday, focusing on the two […] [Read More]
FAA suspends Boeing Field controller, adds tower staff
The Federal Aviation Administration has suspended an air-traffic controller who fell asleep during his shift at Boeing Field, in Seattle, on Monday and added a second controller on the midnight shift at the 27 towers that previously had just one controller during during that shift, the agency announced Wednesday. The FAA said it decided to […] [Read More]
Boeing may shelve new airplane plan (Leeham News)
Boeing is backing away from a plan to announce a new narrow-body aircraft program at this year's Paris Air Show, according to the research firm Buckingham Research, as reported by Leeham News. Before and after Airbus decided to outfit its A320 family with new, more-efficient engines, Boeing executives said they will almost certainly skip re-engining […] [Read More]
Boeing's KC-46A tanker won't have winglets (Aviation Week)
All of the images Boeing put out to promote the NewGen Tanker it offered to the U.S. Air Force, and accompanying its announcement that it won the contract, featured fuel-saving winglets. But the winglets are missing from new images of the plane, which the Air Force renamed KC-46A. And the company confirmed to Aviation Week […] [Read More]
Boeing adds orders for five 777s from Qatar Airways
Qatar Airways has ordered three more Boeing 777 Freighters and two 777-300ERs, the two companies announced Wednesday. Boeing had previously added the planes to its orders website — in 2010 and 2011, respectively — as being from an unidentified customer. The orders are worth $1.4 billion at list prices, although airlines get substantial discounts. "Qatar […] [Read More]
Lufthansa chooses Pratt engines for A320neos
Lufthansa has chosen Pratt & Whitney PurePower PW1100G engines for its 30 Airbus A320neo family aircraft on order, the engine maker announced Monday. [Read More]
India approves buy of four more Boeing P-8s (Dow Jones)
The Indian government has approved the purchase of four more Boeing P-8I maritime patrol aircraft, Dow Jones reported Friday. The four P-8Is come on top of the eight India ordered in 2009, for delivery between 2013 and 2015, and would be delivered after 2015, Boeing Military Aircraft President Chris Chadwick told Dow Jones. Boeing builds […] [Read More]
Boeing, Airbus brands gain value
Boeing is the 100th most valuable brand in the world, up from 112th last year, according to the BrandFinance Global 500. The Boeing brand is now worth $9.2 billion, up from $7 billion in 2010, according to the ranking. Airbus remains far behind, at 250th, with a value of $4.1 billion, but surged up from […] [Read More]
NTSB asked the FAA to change controller rule
Days before a controller fell asleep in the tower at Ronald Reagan National Airport, leaving two airliners to land without clearance, the National Transportation Safety Board called for prohibiting controllers from also acting as supervisors on overnight shifts. [Read More]
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Romney SuperPAC Pulls Negative Primary Spots From YouTube
Originally published on Tue May 1, 2012 2:35 pm
As earlier reported by Politico, the pro-Romney SuperPAC Restore Our Future has removed most of the ads it produced during the primary campaign from its YouTube channel.
Only two videos remain: one positive ad recounting Romney's efforts to help a business partner find his missing teenage daughter, and one negative ad attacking President Obama's economic record.
Many of the ads were harsh attacks on Romney's primary opponents, who may make some waves in the race this week.
On Wednesday, former House Speaker Newt Gingrich is scheduled to drop out of the race and is expected to endorse Romney.
Romney and former Pennsylvania Sen. Rick Santorum plan to meet in private on Friday, Santorum advisor John Brabender confirmed to NPR. Santorum has yet to formally endorse Romney, although he's been asked about it plenty.
Restore Our Future spokesperson Brittany Gross said there was no coordination between those events and the removal of the videos. "The primary's over, so down with the primary videos," said Gross.
If you missed any of the ads and still want to see them, you're in luck. Just search YouTube for "Restore Our Future" and either "Gingrich" or "Santorum" and you'll see that they've been reposted by plenty of other outlets.


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Random House New Releases - Juvenile Nonfiction - Performing Arts - Television & Radio http://www.randomhouse.com/category/ www.randomhouse.com 2006-03-13T11:23:00-05:00 Aliens are Coming! by Meghan McCarthy www.randomhouse.com
Aliens are Coming!
Written by Meghan McCarthy
Trade Paperback, 40 pages | Dragonfly Books | Juvenile Nonfiction - Performing Arts - Television & Radio; Juvenile Nonfiction - History - United States | $6.99 | 978-0-385-73678-7 (0-385-73678-9)
A picture-book account of one of the most famous pieces of radio history!

* "Sandwiched between a look at Depression-era radios and a set of fanciful period advertisements, McCarthy delivers a semi-serious account of the 1938 War of the Worlds broadcast, illustrating both passages from the script and briefly told descriptions of widespread panic with smudgy cartoon scenes featuring bug-eyed monsters and equally bug-eyed people. The author closes with a substantial note that analyzes the broadcast' immediate and long-term effects, points out that the announcers repeatedly admitted that they were presenting a drama during the broadcast, mentions several later revivals here and internationally and notes the response of H.G. Wells himself to the original production. She has also set up an invitingly designed Web site with an array of relevant links."
—Kirkus Reviews, Starred

An ALA–ALSC Notable Children's Book

A School Library Journal Best Book of the Year

An IRA–CBC Children's Choice

A Kirkus Reviews Editor's Choice

A 2006 New York Public Library 100 Titles for Reading and Sharing

 http://www.randomhouse.com/catalog/display.pperl?isbn=9780385736787 2009-08-11T00:30:00-05:00


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Winnipeg Free Press - PRINT EDITION
New stadium a 2013 star for our city
Prime venue for big shows, football
Happy New Year, Winnipeg Blue Bombers!
The year 2013 promises to be an auspicious one for the Big Blue regardless of how the team performs on the gridiron, because the new Investors Group Field will open and help put Winnipeg on the map.
Early in the new year, the Bombers staff will leave their longtime home on Maroons Road and settle into their new digs at 315 Chancellor Matheson Rd. on the University of Manitoba's Fort Garry campus.
The football club's offices are set to open at the new stadium on Jan. 14, and the Bomber Store will be ready for business there sometime in March.
The new sports shrine is already starting to change the way the city is viewed by musical acts and the promoters of other large-scale events.
U.S. singer-songwriter Taylor Swift's June 22 sold-out appearance at Investors Group Field will be the $190-million stadium's first concert.
With space for just under 33,000 fans, the stadium will be the smallest on the six-time Grammy Award winner's tour, but Winnipeg is the only market of its size to land Swift for a stadium show, said Kevin Donnelly, senior vice-president of True North Sports and Entertainment, which books concerts at the football field.
Donnelly said Friday that having a new stadium to offer big-time acts makes his job a lot easier. Artists are aware of it, as are sport programmers, he said.
"It plays a huge role. In a lot of cases, it's the deciding factor. They will change routing to accommodate a new building where in other instances they may not even look at a market of that size," he said.
Although he could not divulge details, Donnelly said he's working hard to land a couple of other big-name acts in the new year. "We've got a couple of really significant leads that we're pursuing quite aggressively," he said Friday.
The Blue Bombers will break in the new football field with a June exhibition game, likely before the Swift show. The date and opponent won't be known until late January or sometime in February, when the Canadian Football League releases its 2013 schedule.
It's expected the Blue Bombers will save much of their stadium-opening festivities for the club's first regular-season home game. The CFL typically begins its regular season around Canada Day.
The football club's business plan calls for concert revenue to help repay the non-profit organization's $85-million stadium loan from the province.
Investors Group Field will also be the home of the University of Manitoba Bisons football team and has already been chosen as one of the venues for the 2015 FIFA Women's World Cup, hosted by Canada.
Manitoba Premier Greg Selinger is also touting the new stadium as the future site of an outdoor NHL regular-season game.
Republished from the Winnipeg Free Press print edition December 29, 2012 A7
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text:
An acoustic transducer system for use in the measurement of longitudinal sound velocity in a cement sample that is maintained at high temperature and pressure. The acoustic assembly is separate from the end plugs to optimize acoustic coupling between the individual elements of the assembly, to increase the amplitude and consistency of the acoustic signal and to provide an ability to replace the transducers as a separate assembly. The transducer includes an acoustic transmission line and utilizes a pressure isolation method to optimize the material and the manufacturing process to enhance the acoustic signal required for the measurement. The transducer assembly includes a high temperature piezoelectric ceramic and a load mass that improve the signal amplitude and provide the required electrical connections. The transducer improves the ability to measure the longitudinal wave velocity in a cement sample at elevated temperature and pressure for determining the sample's compressive strength.
1. A transducer assembly for an ultrasonic cement analyzer comprising:
an acoustic port having an external flat surface;
a ceramic transducer having a first flat surface and a second flat surface, said second flat surface in communication with said external flat surface of said acoustic port;
a back mass having a first flat surface and a second flat surface, said second flat surface of said back mass in communication with the first flat surface of said ceramic transducer;
a tension bolt for securing said acoustic port, said ceramic transducer, and said back mass tightly together;
an electrical connector in electrical communication with said back mass;
wherein said flat surfaces have a minimal surface variance to promote acoustic coupling between said acoustic port, said ceramic transducer, and said back mass;
wherein said acoustic port is adapted to be received in an end plug of a pressure vessel; and
wherein said acoustic port defines an annulus that acoustically isolates a signal from said end plug.
2. The transducer assembly according to
an outer surface of said acoustic port is tapered for forming a metal-to-metal seal with said end plug.
A system for transmitting acoustic energy into a cement sample, wherein the system includes an ultrasonic port received in a receptacle in an end plug. More particularly, the ultrasonic port defines a flat surface for contacting a piezoelectric ceramic transducer for acoustic excitation without use of a coupling agent.
Ultrasonic cement analyzers (�UCA�) are well known in the art. A typical UCA provides a number of advantages over alternative methods for measuring or estimating the characteristics of a particular cement sample. A particularly compelling advantage is the ability of the UCA to perform nondestructive measurements at elevated temperature and pressure such as may be found in oil field applications.
The UCA was developed to measure the compressive strength of a cement slurry as the cement sets while subjected to oil field temperatures and pressures. A typical UCA consists of a high temperature, high pressure vessel, a heating jacket capable of heating rates up to 5.6� C. (10� F.) per minute, up to 204� C. (400� F.) and pressures to 138.0 MPa (20,000 psi).
A typical UCA utilizes a pair of ultrasonic transducers to measure transit time of an acoustic signal transmitted through the slurry as it sets. Set time and compressive strength are calculated from the measured transit time via empirically developed equations. U.S. Pat. Nos. 4,259,868 and 4,567,765 disclose UCAs in detail and are incorporated herein by reference.
The operating temperature of a typical UCA, however, is limited by the use of a ceramic with a Curie temperature of typically 300� C., a coupling coefficient of 0.71 and an impedance of 35�106 MKS Rayls. The limit on operating temperature of the standard UCA has typically been 200� C. With the need to evaluate cement at temperatures up to 316� C. (600� F.), a different type of piezoelectric ceramic is desirable.
Piezoelectric ceramics with a high Curie temperature are available. However, a problem associated with using piezoelectric ceramics in a UCA is that the typical coupling coefficient of the ceramic decreases as the Curie temperature increases. Because of the already low signal level and the lower sensitivity of high temperature piezoelectric ceramic, an improvement in the mechanical design of the UCA is desirable to increase the signal amplitude.
The piezoelectric ceramic in a typical UCA is mated to an interior of a plug at the bottom of a flat bottom hole approximately 2.5 inches deep. To achieve good signal amplitude in the measurement, the bottom of the hole should be extremely flat to couple acoustic energy from the transducer into the cement. Manufacturing and maintaining this flat surface presents difficulties. High temperature grease is typically used to compensate for inadequacies of the acoustic coupling. Over time this grease tends to degrade due to heat, which results in loss of signal. The thickness of the metal separating the piezoelectric ceramic from the cement acts as a narrow band filter that limits the measurement to a narrow range of frequencies.
It is therefore desirable to produce a transducer for use in a UCA that operates at higher temperature and produces higher signal amplitude to obtain accurate transit time measurements.
The acoustic transducer system of the invention is used to measure longitudinal sound velocity in a cement sample maintained at high temperature and pressure. The acoustic transducer system is adapted for use with a conventional ultrasonic cement analyzer (UCA), but is separate from the end plugs of the UCA to optimize acoustic coupling between the individual elements of the system, which increases the amplitude and consistency of the acoustic signal and provides an ability to replace the transducers as a separate assembly. The transducer assembly of the invention includes an acoustic transmission line and utilizes a pressure isolation method to optimize the material and the manufacturing process to enhance the acoustic signal required for the measurement. The transducer assembly includes a high temperature piezoelectric ceramic and a load mass that improves the signal amplitude and provides the required electrical connections. The transducer assembly improves the ability to measure the longitudinal wave velocity in a cement sample at elevated temperature and pressure for determining the sample's compressive strength.
More particularly, the invention relates to a transducer assembly for an ultrasonic cement analyzer that includes an acoustic port having a flat upper surface, a piezoelectric ceramic having a flat upper surface and flat lower surface in communication with said flat upper surface of said acoustic port, a back mass having a flat upper surface and a flat lower surface in communication with the flat upper surface of said ceramic transducer and a tension bolt for securing said acoustic port, said ceramic transducer, and said back mass tightly together. In a preferred embodiment, the acoustic port functions as a negative electrode and the back mass functions as a positive electrode.
An electrical communicator, such as a spring, is located between and in electrical communication with the electrical connector and the back mass. The flat surfaces have a minimal surface variance, preferably 20 microns or less, to promote acoustic coupling between said acoustic port, said piezoelectric ceramic, and said back mass without a need for a coupling agent.
The acoustic port is adapted to be received in an end plug of a pressure vessel. The acoustic port defines an annulus that acoustically isolates a signal from the end plug.
An outer surface of the acoustic port is tapered for forming a metal-to-metal seal with the end plug.
The acoustic transducer system of the invention improves signal quality by placing critical elements where they can be processed properly. The invention allows for the easy use of materials with the best acoustic properties. The use of a transmission line greatly increases the bandwidth available for the acoustic signal, e.g., not only can the �500 kHz used in the standard UCA be used but also much lower frequencies may be utilized in the measurement of transit time.
Before explaining the present invention in detail, it is important to understand that the invention is not limited in its application to the details of the construction illustrated and the steps described herein. The invention is capable of other embodiments and of being practiced or carried out in a variety of ways. It is to be understood that the phraseology and terminology employed herein is for the purpose of description and not of limitation.
Referring first to
Acoustic energy propagating from lower acoustic port 32 passes through the cement to upper acoustic port 34. The transit time of this signal is used to compute the compressive strength of the cement using industry accepted equations that relate transit time to cement compressive strength. Acoustic energy also travels from lower port 32 through lower end plug 18 through vessel wall 14 to upper end plug 16 and into upper acoustic port 34. The design of the vessel makes this path of adequate length and with enough attenuation that any signal propagating along this path does not contaminate the measurement of the signal passing through the cement. In previous UCA designs, the acoustic function performed by acoustic ports 32 and 34 were simply a protrusion into cement with a diaphragm thickness of approximately 0.3 inches to withstand the pressure with a longitudinal wave transducer inserted in the air space within the plug opposite the cement and pressed against the diaphragm.
An enlarged view of the transducer assembly and upper acoustic port 34 are shown in
Lower contact surface 102 on the piezoelectric ceramic 100 contacting the upper surface 101 of the acoustic port 34 are lapped flat to approximately 20μ inches as are the upper surface 103 of the piezoelectric ceramic 100 and lower surface 118 of back mass 104. While a surface flatness having a variance of 100μ inches to 500μ inches was found to be acceptable, best results were achieved when surfaces 101, 102, 103 and 118 are flat, having a surface variance of approximately 20μ inches or less. The accuracy of contact surfaces 102 eliminates the need for any coupling agent to promote acoustic coupling between the components.
Upper acoustic port 34 acts as the ground electrode for ceramic transducer 100. Back mass 104 functions as a positive electrode. The acoustic signal passes through center 106 of upper acoustic port 34, which acts as a transmission line for the acoustic signal. This acoustic path is isolated from the exterior of upper acoustic port 34 by annulus 108, preferably created by using an electrical discharge machining technique. Annulus 108 acoustically isolates the signal from upper end plug 16 until the signal propagates to the end of upper acoustic port 34, which is in contact with the cement. The isolation is required to separate in time and amplitude the signal that could travel through vessel wall 20 of pressure vessel 10. The isolation also decreases the total signal that is allowed to leak into pressure vessel 10. Upper acoustic port 34 is held in place in upper end plug 16 by left hand threads 110. Metal-to-metal seal 112 maintains pressure in within cavity 12.
Upper acoustic port 34 is preferably made from a metal such as titanium because of its strength and its acoustic impedance. Titanium has an acoustic impedance of 27.3�106 MKS Rayls as opposed to stainless steel with an impedance of 45.7�106 MKS Rayls. The lower impedance improves both the coupling of energy from ceramic transducer 100 to upper acoustic port 34 as well as improves the coupling of the signal from upper acoustic port 34 to the cement slurry. The improved coupling increases the signal level in the measurement.
Both the upper surface 114 and lower surface 118 of the back mass 104 have a cut, i.e., upper cut 116 of upper surface 114 and lower cut 120 of lower surface 118 beginning at a diameter of piezoelectric ceramic 100 that is one half the distance to the edge of the mass 104, approximately 0.01 inches deep. This cut, i.e., cut 116, 118, reduces the metal that must be removed in the lapping process and allows the outer edge to stabilize the part while lapping to more easily obtain a flat surface. Back mass 104 is typically made from stainless steel although other high density materials may be used. Upper acoustic port 34, ceramic transducer 100, and back mass 104 are clamped tightly together using tension bolt or threaded rod 122 with insulated sleeve 124. Since back mass 104 functions as the positive electrode and threaded rod 122 functions as ground, electrical isolation is required. Upper surface 114 of back mass 104 is preferably lapped to approximately 20μ inches surface flatness, as are both surfaces of ceramic insulator 126, and a lower surface of load distribution washer 128. Double nuts 130 a and 130 b are used to apply tension to the stack of components and to prevent any movement over time. Spring 132 provides both support for upper electrical connection 28 and functions as an electrical conductor for the positive connection to ceramic transducer 100. Spring 132 contacts upper washer 136, which is preferably a lock washer, and which is contacted by retaining nut 138. Retaining nut 138 holds upper electrical connector 28 onto ceramic insulator 140. The ground path is through upper acoustic port 34 and upper end plug 16.
In addition to providing the ability to improve the signal quality by placing critical elements where they can be processed properly, the improved design of the invention allows for the easy use of materials with the best acoustic properties. By modifying acoustic ports 32, 34 from a diaphragm to a transmission line, the bandwidth of the acoustic signal was greatly increased. The invention allows the measurement of transit time at frequencies ranging from 500 kHz used in the standard UCA, to frequencies as low as 113 kHz.
Thus, the present invention is well adapted to carry out the objectives and attain the ends and advantages mentioned above as well as those inherent therein. While presently preferred embodiments have been described for purposes of this disclosure, numerous changes and modifications will be apparent to those of ordinary skill in the art. Such changes and modifications are encompassed within the spirit of this invention as defined by the claims.
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Yadier Molina of the St Louis Cardinals runs to second base during a... News Photo2nd Base,Florida - USA,Full Length,Gulf Coast States,Jupiter - Florida,Major League Baseball,National League,New York Mets,Roger Dean Stadium,Sport,Spring Training,St. Louis Cardinals,Stadium,USA,Vertical,Yadier MolinaPhotographer Ronald C. Modra/Sports ImageryCollection: Getty Images Sport 2013 Ronald C. Modra/Sports ImageryJUPITER, FL - MARCH 24: Yadier Molina #4 of the St. Louis Cardinals runs to second base during a spring training game against the New York Mets on March 24, 2013 at Roger Dean Stadium in Jupiter, Florida. (Photo by Ronald C. Modra/Sports Imagery/ Getty Images)


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Home » Contests & Submissions
Contests & Submissions
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San Diego Writers, Ink offers several opportunities for writers to find an audience, or to compete for cash and other prizes, and to get published.
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Microscopic view of Euglena species (approx X 100) Read More
Artist Laura Splan has created some cool doilies using viral patterns:
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This Gram-stained specimen reveals N. gonorrhoeae intracellular diplococci, leading to a positive diagnosis of gonorrhea.
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Credit: National Institute of Diabetes and Digestive and Kidney Diseases, National Institutes of Health.
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Latest News
Jackie Evancho Stars in a new Protect Seals PSA calling for an end to commercial sealing!
Platinum-selling vocal sensation Jackie Evancho is using her voice to help save seals. Evancho stars in a new PSA about the plight of the baby seals who are victims of commercial sealing.
"In the 14 years since I was born, more than two million baby seals … Read More
Jackie To Perform in Wabash, Indiana
Jackie will perform at the Honeywell Center, on November 20, 2015! Tickets will go on sale on Tuesday, March 10.
For tickets, please go to:http://www.honeywellcenter.org/2015/02/26/jackie-evancho/
Jackie To Perform in Glenside (Philadelphia), PA
Jackie will perform at the Keswick Theatre on September 17, 2015! Tickets will go on sale on Friday, December 19 at 12:00pm EST.
For tickets, please go to:http://www.axs.com/events/256939/jackie-evancho-tickets


text: Mack to Congress: Iran plans missile sites in Venezuela >>>>> According to the Nov. 25 edition of the German daily, Die Welt, Venezuela has agreed to allow Iran to establish a military base manned by Iranian missile officers, soldiers of the Iranian Revolutionary Guard, and Venezuelan missile officers. The article states that the previously undisclosed contract provides for the establishment of a jointly-operated military base in Venezuela and the joint development of ground-to-ground missiles. If proven factual, this would be just the latest example of an increasingly dangerous partnership between Iran and Venezuela. <<<<<<<<<< Mack to Congress: Iran plans missile sites in Venezuela | news-press.com | The News-Press