text:
This invention is a device for orally directing air while wearing an air mask. In the invention, a tube extends from outside the air mask, through the air mask, and into the mask wearer's mouth. The tube is fitted with means to seal its passage through the mask and may also include a one-way valve to prevent aspiration through it. In a preferred embodiment, the invention is manufactured separately from an air mask and may be reused after the air mask becomes worn out.
1. An apparatus for orally directing air through a face mask to remove dust from a work piece or work surface, comprising:
(a) a face mask having a convex outer surface and a concave inner surface made of an air-permeable material thereby preventing a wearer from inhaling irritants;
(b) a tube extending from outside said mask's convex outer surface and through said mask to its concave inner surface, so that an end of said tube may be placed in a mask wearer's mouth, a one-way valve attached to said tube to prevent aspiration of dust through said tube; and
(c) means for attaching and sealing said tube to said mask said means comprising concentric threaded members sealingly engaging both said outer and said inner surfaces of said face mask; so that the mask wearer may orally direct air away from a workpiece or surface by blowing through said tube.
2. The apparatus of claim 1 wherein said attaching and sealing means comprise:
(a) a first sealing member fitting inside the air mask's concave side and extending through the air mask to its concave side; and
(b) a second sealing member cooperatively engageable to said first sealing member and fitting on the air mask's convex side.
3. A method of attaching an air-directing apparatus to an air mask to remove dust from a work piece or work surface, comprising the steps of:
(a) cutting an X-shaped opening in the air mask;
(b) passing first means for attaching the apparatus through the opening from a first side of the air mask, so that a portion of the attaching means extends from a second side of the air mask;
(c) threadably securing second attaching means to the first attaching means, so that the second attaching means seal the opening in the air mask except inside the first attaching means;
(d) inserting a tube through said first and second attaching means, so that the tube extends beyond the first and second attaching means; so that a person may blow through the tube while wearing the air mask; and
(e) positioning a one-way valve on said tube to prevent aspiration of dust through said tube.
This invention relates to protective masks, respiratory masks, and air masks, and more particularly to masks worn to prevent aspiration of dust, sawdust, and other irritants.
Various dust and irritant masks have been developed in recent years to prevent inhalation of sawdust, asbestos, and other irritants. These masks fail to serve that purpose; however, if mask wearers must remove them while working. Existing mask designs fail to accommodate the mask wearer's ordinary need to blow away dirt or sawdust.
Typically, these masks are made of air-permeable material and provide only space for a person's nose and mouth and means for sealing the mask against the person's face. A respiratory mask may also include an attached hose for connection to a supply of oxygen or an anesthetic. The prior art does not disclose an apparatus allowing a mask wearer to direct air toward a workpiece or work surface while maintaining the protection of the mask.
Carpenters and other workers often need to remove dust from their workpiece or work surface while using tools. Woodworking tools, for example, leave sawdust that should be removed from the workpiece or surface while the tools are being used. The user, would like to blow the dust away but does not wish to aspirate the sawdust or to stop working to brush the dust away with his or her hands. The applicant's invention prevents aspiration of dust and other irritants but allows the user to blow the dust away from a workpiece or surface.
The present invention may be used with a variety of air masks. In this invention, a tube extends through an air mask into the mask wearer's mouth. In a preferred embodiment, the tube is attached to outside sealing means that connect to sealing means on the inside of the mask near the mask wearer's mouth. After the air mask becomes worn, the wearer may remove the air-directing apparatus and use it with a new air mask. In an alternative embodiment, the aforementioned tube includes a one-way valve to prevent aspiration of dust through the tube.
Accordingly, an object of this invention is to provide an apparatus allowing one to orally direct air for blowing away dust while wearing an air mask.
Another object of this invention is to provide an air-directing apparatus that may be reused after an air mask is worn out.
FIG. 1 is a side view of the invention as worn with an air mask.
FIG. 2 is an exploded view of a preferred embodiment of the invention.
FIG. 3 is a perspective view of the tube of the invention showing a one-way flapper valve to prevent aspiration of dust through the tube
FIG. 4 (a), (b), (c), and (d) show a method of attaching the air-directing apparatus to an existing air mask.
FIG. 1 shows the air mask 1, tube 2, and outside connecting means 3. As shown, the air mask 1 fits over the mask wearer's nose and mouth and adheres to his or her face. The tube 2 extends from outside the air mask through outside sealing means 3 and into the user's mouth. By this configuration, air mask 1 prevents the user from aspirating the dust and other irritants while tube 2 allows the user to blow them away.
Sealing means 3 shown in FIG. 1 has 3 parts: washer 9, threaded portion 6, and sleeve 7. Washer 9 is used to help seal an opening in air mask 1 and may be separate from or rigidly connected to threaded portion 6.
FIG. 2 is an exploded view showing the various parts of the invention. Sealing means 3 and 4 are hollow, and they may be made of plastic, metal, or many other materials. In this embodiment, the washer 9, threaded portion 6, and sleeve 7 of outside sealing means 3 are rigidly connected. Inside sealing means 4 are comprised of washer 10 and threaded portion 5, which are rigidly connected.
Air mask 1 may be any one of several varieties currently available. Air mask 1 fits over inside sealing means 4 so that threaded portion 5 extends through air mask 1. Outside sealing means 3 fit over air mask 1 so that threaded portion 6 cooperatively engages threaded portion 5.
Tube 2 fits snugly inside sleeve 7 and is held in place by friction between the outside surface of tube 2 and the inside surface of sleeve 7. In alternative embodiments (not shown), sealing means 3 or 4 may have a narrow passage that frictionally engages tube 2 to hold it in place.
FIG. 3 is a perspective view of the tube 2 in an alternative embodiment. In this alternative embodiment, a one-way flapper valve 8 is attached to the tube 2 to prevent aspiration of dust through the tube 2. By this configuration, the user may still blow air through tube 2, but cannot inhale dust through the open end of tube 2.
It is contemplated that the air-directing apparatus disclosed herein may be manufactured and sold separately from air masks. Accordingly, a method of attaching the apparatus to previously manufactured air masks is necessary.
FIGS. 4(a), (b), (c) and (d) demonstrate a method of attaching the air-directing apparatus to an air mask. First, an X-cut 11 is made just below the center of the air mask 1, as shown in FIG. 6(a). Second, threaded portion 5 of inside sealing means 4 is pushed through the concave side of air mask 1, as shown in FIG. 6(b). Third, in FIG. 6(c), tube 2 is pushed through sleeve 7 of outside sealing means 3. Fourth, threaded portions 5 and 6 are screwed together. Washers 9 and 10 seal X-cut 11 outside threaded portions 5 and 6.
Using this method, the air-directing apparatus can be attached to any existing air mask and later removed when the mask becomes worn. Thus, the more sturdy air-directing apparatus may be reused with other masks.
There are various changes and modifications that may be made to applicant's invention, as would be apparent to those skilled in the art. However, any of these changes or modifications are included in the teaching of applicant's disclosure, and it is intended that the present invention be limited only by the scope of claims appended hereto.
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Referenced by
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Search Tags: Robin Williams
One woman's life quest to serve the military and their families
Elaine Rogers, CEO of USO Metropolitan Washington, has worked for the organization serving America's troops since she was 24 years old. Rogers is this week's guest on the Women of Washington radio show.
Tags: DoD , Elaine Rogers , USO , Women of Washington , Aileen Black , Gigi Schumm , Bob Hope ,
DHS turns to mentors to strengthen cyber workforce
The National Initiative for Cybersecurity Education (NICE) is trying to promote cyber skills across several disciplines.
Tags: STEM , technology , cybersecurity , Cyber Workforce , workforce DHS , NICE , Lauren Larson ,


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Search Results
Department says claims over GP fee inaccurate
The Department of Health has said that negotiations relating to the provision of free GP care for children under six are at "an advanced stage" and it is inaccurate to suggest that an offer of €100 per child per year is about to be made by the department or the HSE.
Minister 'disappointed' over Feeney case
Minister for Health Leo Varadkar has said he is very disappointed to hear of what occurred in the case of the late Gerry Feeney at Beaumont Hospital.
Six One News Web: Magdalene survivors accuse Govt over medical cards
Magdalene survivors may get complementary therapy
Minister for Justice and Equality Frances Fitzgerald has promised to examine the option of funding "complementary therapies" for Magdalene survivors.
Garda gives evidence about Elaine O'Hara's laptop
Sixteen movie files of an adult pornographic nature were found on Elaine O'Hara's laptop, the Central Criminal Court has been told.
Fair Deal scheme needs extra €30m, says minister
Junior Health Minister Kathleen Lynch has said an additional €30m is needed every year for the Fair Deal nursing home scheme to ensure people are not waiting longer than eight weeks.
Varadkar: Most GPs will agree to free care scheme
The Minister for Health has said he believes most GPs will sign up to the Government scheme to give free GP care to children under six years of age.
Dismissal of findings against surgeon upheld
The Supreme Court has upheld a lower court's decision to dismiss a finding of Poor Professional Performance against leading consultant paediatrician Professor Martin Corbally.
Pharma firms may be forced to cut drug costs
The Minister for Health is considering using existing legislation to achieve savings in the cost of medicines, according to his spokesperson.


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Anti-Cheating Software Is Wrongfully Banning Battlefield 3 Players
Battlefield 3 players have been running into some renewed performance issues as of late, ones that are related to the 2011 shooter's third-party anti-cheating software. »
Battlefield 3 players have been running into some renewed performance issues as of late, ones that are related to the 2011 shooter's third-party anti-cheating software. » 6/24/14 12:00pm 6/24/14 12:00pm
Get it while it lasts. You can download the game for free on EA's Origin until June 3. » 5/28/14 5:18pm 5/28/14 5:18pm
Forget shooting. One of the most interesting aspects of Battlefield—aside from the incredible large scale moments you can experience while playing—are all the curious easter eggs and alternate reality games that players keep finding. » 3/27/14 4:30pm 3/27/14 4:30pm
Amnesia: A Machine For Pigs is a great horror sequel filled with tons of NOPE moments. Even its glitches are freakin' scary. » 9/13/13 6:30pm 9/13/13 6:30pm
Who would have thought that the most dramatic screenshot from Battlefield 3 would not show any snipers, tanks or brilliant teamwork, but dancing... with a broken ankle? I didn't see this one coming. » 8/28/13 8:30am 8/28/13 8:30am
This is how shooter montages should be made! The slow pace, the dramatic approach and the proper choice of music set this Battlefield 3 clip by jackfrag way above those boring skill-focused montages. » 7/24/13 12:30pm 7/24/13 12:30pm
In South Korea, the trailer for suspense flick The Terror Live is being called a Battlefield 3 rip off. » 6/26/13 8:00am 6/26/13 8:00am
Battlefield 3 moment of zen. Those vehicles are stuck, and the flag is still untouched. At least for a brief moment, the game mikeyteh was in had a monstrous ramp that I really hope someone hit with the dirtbike. » 6/24/13 8:30am 6/24/13 8:30am
Whether it's StarCraft II, Grand Theft Auto IV, or Battlefield 3, seems like the possibilities for something unexpected and funny to happen in games are unlimited. And one of the best ways to share that moment is through an animated GIF. » 5/31/13 6:30pm 5/31/13 6:30pm
The Internet is a funny place. Do pretty much anything, and someone, somewhere is going to turn it into an animated GIF. Because there is a law written somewhere that pretty much legally binds us all to this rule. » 5/17/13 6:00pm 5/17/13 6:00pm
Sure, you could opt to use an aircraft's weapons when in an aircraft. Or, you can use the altitude to your advantage as a sniper, as sSantzuu does here in Battlefield 3. One of these options is more impressive, if not more dangerous than the other! » 4/24/13 1:30pm 4/24/13 1:30pm
Battlefield players have found all sorts of awe-inspiring ways to do stunts with dirt bikes. But this one takes the cake when it comes to how much air the player grabs, not to mention the rather dramatic ending. » 3/20/13 6:30pm 3/20/13 6:30pm
If you register a copy of SimCity by March 25, you get a free copy of one of eight PC games from EA's catalog, including Mass Effect 3 and Battlefield 3. » 3/18/13 12:25pm 3/18/13 12:25pm
Cutting to the chase, you throw a bunch of C4 on it, obviously. » 3/14/13 12:00pm 3/14/13 12:00pm
You know what every first-person shooter needs? I mean, besides guns? Dirt bikes. And every other high-speed vehicle imaginable. Because if shooting a helicopter down with an RPG is fun, it's even more fun when doing so while also riding a dirt bike. » 3/12/13 10:40am 3/12/13 10:40am
First we found a futuristic easter egg in Battlefield 3's End Game DLC. Now we have something a bit more...prehistoric. » 3/06/13 12:30pm 3/06/13 12:30pm
An easter egg in Battlefield 3's new End Game DLC seems to be hinting at a possible future-based sequel. [via Examiner] » 3/06/13 5:30am 3/06/13 5:30am
1) I sure wish that a game like Battlefield 3 or any other online shooter could be as fun for neophytes like me as it appears in this trailer for the final expansion to Battlefield 3, but I'm sure I'd just die a lot if I tried to hop in and play. » 3/05/13 12:00pm 3/05/13 12:00pm
Straight from DICE's workshop, here's Battlefield 3's freshest DLC, End Game. BF3's fifth expansion sees the return of two classic game modes—Capture the Flag and Air Superiority—and also introduces the dirt bike for some high-speed bazooka-wielding truck-shooting action. Check out the trailer above for a glimpse… » 1/31/13 11:45am 1/31/13 11:45am
This video might feel familiar. And it might be because you saw one like it here on Kotaku a while back. » 12/28/12 4:00pm 12/28/12 4:00pm


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Dr. Steven R. Small, MD
Orthopaedic Surgery
- 60 Merritt Blvd FL 1
Fishkill, NY 12524
- 3 Locations
- (845) 223-1082
Dr. Steven R. Small graduated from the New York Medical College in 1979. He works in Fishkill, NY and 2 other locations and specializes in Orthopaedic Surgery and Orthopaedic Sports Medicine. Dr. Small is affiliated with Hudson Valley Hospital Center and Northern Westchester Hospital. He speaks English and Spanish.
Gender: Male
Languages Spoken: English, Spanish
Orthopaedic Surgery, Orthopaedic Sports Medicine
Medical School: New York Medical College; Graduated 1979
*This physician has multiple office locations. See Office Information for details.


text:
Photo Flash: Sneak Peek at Erick Devine, Jody Madaras and More in MIRACLE ON 34TH STREET at the Arvada Center High Res Photos
The award winning Arvada Center will open Miracle on 34th Street, The Musical directed by Gavin Mayer on November 27 running through December 23, 2012 in the Main Stage Theater. BroadwayWorld has a sneak peek at the show below.
BWW TV Exclusive: Backstage with Richard Ridge- SAG Foundation Conversations Series with Stockard Channing!BWW TV: Go INTO THE WOODS to Celebrate Stephen Sondheim's 85th Birthday!STAGE TUBE: Lin-Manuel Miranda Gives Jonathan Groff a Belated Birthday PresentSTAGE TUBE: 6-Year-Old Theatre Critic Iain Armitage on the Art of Collecting Playbills!VIDEO: Watch Sean Hayes & Husband Scott Icenogle Lip Sync to Jennifer Hudson's 'Trouble'!VIDEO: FINDING NEVERLAND's Kelsey Grammer Talks Playing Captain Hook on 'Late Night'VIDEO: Alan Cumming Talks End of CABARET: 'It's Like the End of An Era for Me'VIDEO: Carey Mulligan Talks Cooking Spaghetti on Stage in Broadway's SKYLIGHTSTAGE TUBE: HEDWIG's Darren Criss Is 'Hopelessly Devoted to You'BWW TV Exclusive: CHICAGO's Carly Hughes Talks Her Big Broadway Year with Carole, Fosse & More!STAGE TUBE: Dan DeLuca & NEWSIES Tour Cast Perform 'Shut Up and Dance' on Disney Playlist!STAGE TUBE: Laura Benanti Tries Out Life as a Barista on New Episode of WORKIN' ITVIDEO: First Look - NEW YORK SPRING SPECTACULAR's 'Singing in the Rain' NumberVIDEO: First Look - Sutton Foster Featured in Music Video for Hilary Duff's New Single 'Sparks'


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Supplement Facts:
Other Ingredients: Vegetable glycerin, deionized water, polysorbate 80, citric acid, natural orange flavor and lemon essential oil.
5 drops once per day in a drink.
If you are pregnant, may become pregnant, breastfeeding, have kidney, parathyroid or lung disease, cancer or are taking any prescription drug, consult your health care professional before using this product.
This product works great at relieving joint pain and discomfort.
I'm young but still have bad joint problems from a birth defect. Out of all the things I have tried (including some FAR more expensive ones that were supposed to work better) this easily outshines them all. I try to take the recommended dose daily and definitely notice some pain when I forget to take it for 2 days or so. It's great, and for the price, it can't be beat!
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ChildLife essentials vitamin D3 dietary supplement liquid drops, Mixed berry flavor, 1 oz
Our Price:$4.62


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Polar Plunge gets $10,000 matching grant
The Detroit Lakes Boys & Girls Club has been growing by leaps and bounds lately, with membership jumping to over 450 kids this year.
"That's an increase of 30 percent (over the past year)," said Jeff Aafedt, president of the club's board of directors.
With participation in its after school and summer activity programs more than doubled, the club is more in need of community support than ever, noted Pat Petermann, the executive director.
Are you a newspaper subscriber but you don't have a Digital Access account yet? https://secure.forumcomm.com/?publisher_ID=40&event=subscriber/lookup.
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Please see shelter contact details in the right hand column. Thank you.
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Are you looking to adopt a pet in the Flomaton area? We have a number of lovable pets waiting for adoption in Flomaton. Petango.com is one of the largest pet adoption sites with animal rescue groups all over the United States and Canada. Petango.com can give you access to a number of adoptable pets in Flomaton looking for a kind, loving owner to take them home. This page is dedicated to our pet adoption shelter in Flomaton where you will find plenty of adoptable pets waiting for a loving owner to take them home.
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In Texas, the Tim Tebow Bill is working its way through the State Legislature. It promises equal UIL participation for homeschoolers. On the surface. But it has problems. In a state where there is zero regulation for homeschooling, the bill actually inserts a testing requirement for students who participate in UIL.
I do not support this bill, as I do not support regulation in homeschools. In a letter to the members of the Senate Education Committee, I shared why. I'm sharing that letter with you today.
As you are aware,
homeschools fall under the definition of private schools, giving us 100%
freedom to direct the education of our children. No testing is required, no
state curriculum must be followed. I believe that at some point in the future,
the Tim Tebow Bill would lead to a loss of these freedoms. Right now we are THE
BEST state in the country in which to Homeschool, and many, many families have
made Texas
their home state simply for this reason. It's that important to them.
There are many Homeschool families who oppose this bill, because we all believe that it will lead to questioning of our curriculum, "passing" grades, and how we spend our day, all of which will lead down a path to regulations that we currently do not have. It will not take long for the parent of a public school team member, a public school teacher, or a coach to question the fairness of allowing homeschooled children to participate in UIL activities while not being required to follow all public school rules (curriculum, tests, etc.). This will open a new discussion, which will eventually end up in
Austin as a bill
requiring more intense scrutiny of how homeschoolers educate their children.
How do I know this? Two reasons. First, in the first year of our homeschooling in
my parents were arrested on charges of truancy. Who called the police? A local
school official. Second, I am a local contact for families in my area who
are interested in homeschooling their children. I get calls and emails of all
sorts from new or current homeschooling families telling of trouble with the
local school district. The majority of public school officials are not friendly
to homeschoolers, but see them as a threat to their funding. The passage of the
Tim Tebow Bill will most certainly heighten this problem.
I do not want or need a state curriculum or outline to educate my children. Many may see this as my having something to hide, but it's actually quite the opposite. In fact I welcome any who read this letter to visit us in our Homeschool to witness how homeschooling benefits children.
We did not use a textbook, and no one took a test. Neither was necessary, because they lived the story through real books and walking in the
Alamo. Some books we read were far above
the "reading level" of my younger children, but they were a part of our "curriculum"
because they are exciting stories.
This same type of education takes place over and over in our home. If one child is slow to gain math concepts, we spend as much time as necessary to gain mastery. One math book might take a year and a half, and the next one might only take 4 months.
One of my children had the hardest time understanding pi, so we spent about 3 weeks on what the math book considered a one-week lesson. I sat by my daughter as she worked problem after problem, always with my help, until she understood it. On the very last day of that lesson, she said, "I finally understand, Mom. I can do this page alone."
Another child has an advanced level of comprehension in every single subject (and every extracurricular activity he tries). He typically moves ahead in his work, even catching up to his older brother and sharing some lessons with him.
One of my children (age 9) has such a desire for learning that every new thing fascinates him, so as soon as he discovers a new topic, he follows every rabbit trail he can. A love of tigers led him to study where they live in the wild, which led to a fascination for Africa, which led to a desire to read maps, which led to an obsession with a high-school geography book, which led to an interest in the layers of the earth which all made sense because he plays Minecraft. I don't even know what grades all those things would be taught in a public school, but it doesn't matter, because he studied them all voluntarily. Again, no textbook was involved and no test was required. I knew exactly what he had learned because he kept telling me. : ) All of this was done alongside math, spelling, cursive, reading, and history.
I could go on, but you get the idea. This concept is not new to homeschoolers. THIS is why we in
highly value our regulation-free homeschools. The joy of learning is so
exciting to witness in our kids when not hampered by a list of do's and don'ts,
grade levels, and passing requirements. Not every family structures their
education like our family, but that's the beautiful part! Some families DO use
textbooks, tests, and standardized testing. Because they can, not because they
have to.
This bill is not all it's advertised to be.There are a few common arguments against this bill, which I will address:
We pay school taxes. Why shouldn't we use the school in exchange?
Fred Watt, a homeschool dad and homeschool sports coach, answered that question best in his own analysis of the bill:
"I find it highly ironic and in fact a bit hypocritical that so many homeschoolers -- those of us who are quick to self-identify as conservative Christians, and profess a strong affinity toward a strict constructionist view of the Constitution -- would be jumping on the bandwagon to push something that effectively amounts to . . . an entitlement!"My family pays $200 per month in school taxes for a school we don't use. I don't like it. I'd rather put $200 per month into my homeschool, But taxes are a necessary evil. For the county taxes I pay, I'd love to submit a request to have my gravel county road paved nice and smooth. But that's not how it works. The senior citizens down the street pay school taxes; what do they get out of it? Nothing. Because it's not an order form for goods and services. It's how government operates, whether we like it or not.
We live in a rural area, where there are no homeschool teams.
My short answer: start one. Every other homeschool team/association started with just one parent who was willing to do the work. These homeschool teams and groups are not limited to the large cities; our tiny community has a homeschool sports association, started by parents who wanted to give their kids a team sport. They went on to compete against public and private schools and even win tournaments. Just do a quick Google search of Texas Homeschool Sports Associations and you'll see that this is not a far-fetched idea.
My reeeealy personal (and controversial) opinion is that those who support this bill are not of the first wave of homeschoolers in Texas who fought for their freedom and value it highly. They are of the second wave who may not share the same convictions for homeschooling their children. Some of them do it because it's easy to do in Texas without realizing that this was not always the case. Some choose to keep the option of public school open for the future because they are flexible in their opinion of education options.
That first wave (to which I belong) remembers that it was a hard and scary decision to do what no one else was doing, to be ridiculed by their own family members, to fear (and sometimes suffer) arrest, to stay indoors during school hours because any neighbor or passerby might call CPS, and to keep an attorney's phone number near the front door in case that dreaded knock should come. THEY (WE) are the families who oppose this bill because THEY (WE) know that freedom is precious, and for Texans it's like living in the promised land. We want the freedom, we have the freedom, and we will fight to preserve that freedom.
The one answer I don't have: Why the Texas Homeschool Coalition is pushing this bill so fervently. I cannot figure that out. But I disagree with them on this issue and I will reconsider my free recommendation of their association to the homeschoolers I speak with constantly.
To read about my parent's arrest, click here. To read about my family's part in the 1986 Austin TEA Party, click here. As you can see, I take this very seriously. : )
For more on why this bill is not good for Texas, start here. Sign the petition and share, share, share.


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Mixing tall fescue seed with Marathon 1 sod
I saw Vigoro brand tall fescue seed at home depot.
It's cheaper by weight than genuine Marathon seed.
I have patchy dead areas in my Marathon 1 lawn.
Will this tall fescue seed blend well with marathon 1 in terms of COLOR?
Marathon 1 is relatively dark green.
I just don't want new fescue to differ too much in color and stand out.
Most tall fescues are pretty similar in color, but I would probably warn against using Vigoro when trying to repair Marathon 1. First of all Vigoro is a real hodge podge of cultivars, none of which do all that well in the NTEP trials. Another thing to think about is growth rate. If I'm not mistaken, most of the Marathons are dwarf types that don't grow all that fast and do better in the heat of California. Vigoro's blend will probably grow faster and not be as heat tolerant as Marathon 1.
+1 Tiemco. I have written two postings in the past two days for folks that wound up with difficult-to-treat weeds after using big-box seed mixes. It's penny-wise and pound-foolish to save a couple of dollars on seed and then wind up having to purchase specialty herbicides to kill the weeds (the herbicides cost $50-$130). Purchasing really good (sod-quality) seed lowers the follow-up work that can go on for 2-3 years. It's similar to purchasing knock-off parts to repair your car - it may work or it may backfire and cause other problems. Also consider that disease-resistance is much better in the newer cultivars, which avoids the do-it-again-and-again cycle of repairing the lawn.
This post was edited by andy10917 on Sun, Dec 9, 12 at 9:56
Agree and agree. And if you a mix dwarf type grass with anything else, you will forever regret it. I would not even mix Marathon I with Marathon II, and certainly not Marathon III. The mixed in grass will look like a weed no matter how the color compares.


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Shoujo Manga Series
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Juujika Triangle [C] by Kaishaku (Fantasy, Romance, School Life, Shoujo)
Love SOS [C] by Mi-Ri Hwang (Action, Drama, Harem, Romance, School Life, Shoujo, Manhwa)
Kokuhaku Gokko [C] by Mihoko Kojima (Drama, Romance, School Life, Shoujo)
Honggane [C] by Mi-Ri Hwang (Comedy, Harem, Romance, School Life, Shoujo, Manhwa)
GuruGuru Meguru [C] by Ayuko Hatta (Comedy, Romance, School Life, Shoujo)
World! Bring It On! [C] by Mi-Ri Hwang (Drama, Romance, School Life, Shoujo, Tragedy, Manhwa)
Kapon (>_<)! [C] by Iori Shigano (Comedy, Harem, Romance, School Life, Shoujo, Smut)
Ookamitachi No Tengoku [C] by Kamaro Kikuchi (Comedy, Romance, School Life, Shoujo)
Confessing Truthfully [C] by Riang Ryu (Comedy, Romance, School Life, Shoujo, Manhwa)
Bloody Kiss [C] by Rina Yagami (Romance, School Life, Shoujo, Supernatural)
C-Blossom - Case 729 [C] by Harutoshi Fukui, Kayoko Shimotsuki (Action, Drama, Mystery, Shoujo)
Virgin Blood - Hiiro no Bansan [C] by Miko Mitsuki (Romance, Shoujo, Supernatural)
Ai ga Areba Ii no Da [C] by Ryou Ikuemi (Drama, Romance, Shoujo, Slice of Life)
Sora ni Taiyou ga Aru Kagiri [C] by Miki Aihara (Comedy, Drama, Romance, School Life, Shoujo, Smut)
Sensei, Sotsugyou [C] by Chika Shiina (Romance, Shoujo)
[03.27] Hibi Chouchou
[03.24] Dengeki Daisy
[03.24] Gangster Hero
[03.21] Love So Life
[12.26] 1/2 Prince
[11.23] The One
[08.19] Sakurahime Kaden
[07.17] Nagatachou Strawberry [C]
[07.09] Baroque
[09.20] Slow Step [C]
[06.10] Lovely Everywhere [C]
[04.16] My Girl [C]
[11.10] Baby Love
[09.07] Youth Gone Wild [C]


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1964 Pontiac Tempest Lemans 2 Dr Hardtop Coupe -- G.T.O. option -- 348 hp, 3-2bbl carburetor, 389 cu.in., code 76XW engine -- Muncie 4-speed... More
2006 Pontiac GTO LS2, Price reduced, one owner, owner passed away, car in storage. 6 speed manual transmission, show car, extremely cared for. ... More
WHOA, WHAT DO WE HAVE HERE? A 1964 Pontiac GTO that is UNBELIEVABLLY CORRECT! WOW, What a find, this car is in FANTASTIC condition,... More


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text:
The good news never seems to stop in the wonderful world of river cruising: Connecticut-based tour operator Tauck has announced the construction of two brand new river cruise ships that will represent an entirely new class of vessel for the company.
Set to launch in 2014, the new ms Inspire and ms Savor will measure 135 metres in length; some 25 metres longer than the line's existing Jewel-class river cruise ships. Despite the fact they're 23 per cent larger, these new ships will only accommodate 10 per cent more guests, for a maximum capacity of 130.
"Our existing riverboats — what we're now calling our Jewel Class vessels — already have the lowest passenger-to-ship-length ratio on Europe's rivers," said Tauck CEO Dan Mahar. "When our Inspiration Class ships launch next year they'll each have just 130 guests aboard, whereas other major lines carry up to 190 guests on the same length ships. You simply can't deliver the same relaxed, intimate atmosphere when you put nearly 50 per cent more passengers into the same space."
On-board their newest vessels, Tauck will continue to develop and enhance the river cruise product that has become their trademark. Skilled and friendly Tauck Directors will personally accompany shore excursions, all of which are included in the cost of the cruise.
In my own personal experience aboard Tauck's Swiss Jewel last fall, I was pleasantly surprised to see that despite the intimate size of the groups — rarely more than 25 guests per tour — Tauck chartered full-length motorcoaches to let everyone spread out.
The line also paid each guest €20 for lunch on an all-day excursion from Linz to Cesky Krumlov, pointing out that guests had paid for lunch aboard the Swiss Jewel in their cruise fares, and that their choice of excursion for the day shouldn't affect that.
"River cruises offer incredible opportunities for authentic, in-depth explorations of each destination, so we place tremendous emphasis on ensuring that our shore excursions — all of which are included in our cruise prices — are absolutely world-class," said Mahar.
On-board each ship, three Tauck directors and one Tauck cruise director will provide a level of service that is highly personalized and approaches that found aboard ultra-luxury vessels.
As I discovered, the Tauck directors have a seemingly endless wealth of knowledge;
They also remember you: on a return visit to Passau in December, aboard another ship operated by another line, the Tauck directors recognized me and took the time to say hello.
Next year, Tauck will also introduce four brand new itineraries, including its first-ever voyages down the magnificent Seine River.
For a look at Tauck's river cruise product, read our Live Voyage Report aboard the Swiss Jewel on fromthedeckchair.com
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text:
Author has written 1 story for Dragon Ball Z, and Bakugan Battle Brawlers.
Hi there, I'm Emily, Emily Kuso
Pen name: xXDividedMemoriesXx
True name: Emily :D
Age: 16
Birthday: September 19th
I'm your average fanfic writer-well, maybe, I'm not actually sure if I'm "Average" because I'm a crossover writer!
I'm currently entering my junior year in high school this coming September. I'm a very diligent Honors student, that doesn't really know what she wants to do in her future. I usually use things like writing and drawing as my stress relievers for school... as sometimes I get carried away way too quickly lol. Whenever I have free time I love to do these two things, usually revolving around my main fanfiction(with an original plot mind you) "Memories of the Wind". I'll get more into that in a bit.
As a fanfiction writer, I'm obviously a fan of many many many fandoms. My 3 BIG fandoms I love(and happen to be what my story uses) is Bakugan, Pokemon, and Dragon Ball Z. I love pokemon and Dragon Ball Z about the same, but Bakugan will always be my favorite fandom of all(sue me, okay? I like odd things XD). I have many other fandoms love, and a few fandoms I used to love(my friends know what I'm talking about.)
Anyway, that's enough about me, so here's a bit about what you'll be expecting from me.
I write a fanfiction that I like to call Memories of the Wind, it's a combonation of pokemon, dragon ball z, and bakugan. (again, my 3 favorite fandoms of all time). Except the thing is, it's got a completely original plot. It doesn't follow the shows pokemon or dragon ball Z at all, and there's only a few things from bakugan(mostly in the beginning). The story starts about halfway through the time of season 1 of bakugan. The main protagonist, Emily Kuso(yes, it's also the name I go by) is roughly about 9 years old at the start of the first book.
There's a total of 4 books in the Memories of the Wind series, which are as follows
- Line of Trust (1)
-Ray of Destiny (2)
- Aura's Illusion (3)
-Redemption (4)
I have a lot of conceptual characters that do appear throughout the story, which you can find on my deviantart here http://xxdividedmemoriesxx.deviantart.com/
I don't really want to spoil too much else about what I have in store, so I'll leave it at that. PM me if you have any questions _
Updates ol' fun:
Chapter 6: Done :D
Chapter 7: I'll start it...when I have. Hope to have it posted by the end of the school year.
Unsafe External Link


text:
Disclosed is a method of increasing capacitance of a memory cell capacitor. A bottom electrode, comprising a hemispherical grained (HSG) silicon layer, is subjected to a dry etch process. The etch tends to separate the individual grains of the HSG silicon, thereby facilitating formation of a uniformly thick capacitor dielectric over the HSG silicon surface. Average thickness of the dielectric may therefore be reduced while maintaining reliability of the memory cell. The described embodiments include HCl/HF vapor etch, and NF3 plasma etch. Both of the preferred embodiments are configured to operate isotropically. Due to precisely controllable etch rates, the dry etch of the present invention is viable for separating grains of HSG silicon layers incorporated into extremely dense circuits (e.g., 64 Mbit DRAM) and correspondingly scaled down circuit dimensions.
1. A method of fabricating a capacitor for an integrated circuit memory cell, the method comprising:
forming a layer of hemispherical grained (HSG) silicon for a bottom electrode structure in electrical contact with a circuit node; and
dry etching the HSG silicon layer by flowing hydrofluoric vapor, thereby increasing separation between individual grains of the HSG silicon layer.
2. The method of
3. The method of
4. The method of
etching with hydrofluoric vapor between about 0░ C. and 100░ C., at between about 100 mTorr and 1,000 mTorr; and
etching with hydrochloric vapor between about 100░ C. and 800░ C., for between about 10 seconds and 60 seconds.
5. A method of fabricating a capacitor for an integrated circuit memory cell, the method comprising:
growing a layer of hemispherical grained (HSG) silicon for a bottom electrode structure in electrical contact with a circuit node, wherein growing comprises a redistribution anneal: and
separating individual grains of the HSG silicon layer by exposing the HSG silicon to a substantially isotropic plasma etch within a plasma reactor.
6. The method of
7. The method of
8. The method of
9. The method of
10. The method of
11. The method of
12. The method of
13. The method of
14. The method of
15. The method of
forming a substantially conformal capacitor dielectric layer over the dry etched hemispherical grained silicon layer; and
depositing a top electrode over the capacitor dielectric.
16. The method of
17. The method of
18. A method of separating substantially contiguous silicon grains of a hemispherical silicon grain (HSG silicon) layer for an integrated capacitor electrode, the method comprising substantially isotropically dry etching between about 20 Å and 500 Å of the HSG silicon layer prior to formation of a capacitor dielectric.
19. A method of fabricating a capacitor for an integrated circuit memory cell, the method comprising:
forming a conductive container lined with an interior hemispherical grained (HSG) texture, the container characterized by a diameter of less than about 1.0 μm;
dry etching less than about 200 Å of the interior HSG texture layer by exposure to a fluorine-containing species;
forming a substantially conformal capacitor dielectric layer over the etched interior HSG texture; and
depositing a top electrode over the capacitor dielectric.
20. The method of
21. The method of
22. The method of
23. The method of
24. A process of forming an integrated circuit, the process comprising:
forming an electrode structure including a plurality of contiguous hemispherical silicon grains; and
separating the contiguous hemispherical grains by etching with HF vapor between about 0░ C. and 100░ C. and HCl vapor between about 100░ C. and 800░ C.
25. A method of forming a capacitor structure in a dynamic random access memory array, the method comprising:
forming a conductive bottom electrode including a hemispherical grain silicon surface;
substantially uniformly etching less than about 200 Å of the hemispherical grain silicon surface by exposure to a plasma formed of source gases including an inert gas and between about 5% and 40% NF3 by volume, thereby leaving an etched surface;
depositing a capacitor dielectric over the etched surface; and
depositing a conductive top electrode layer over the capacitor dielectric.
26. The method of
27. The method of
The present application is a continuation of U.S. application Ser. No. 08/650,916, filed May 17, 1996, now U.S. Pat. No. 6,027,970, issued Feb. 22, 2000.
The present invention relates to increasing the roughness of hemispherical grain (HSG) silicon surfaces, and more particularly to increasing the capacitance of capacitors in high density dynamic random access memory (DRAM) chips.
Recent advances in the miniaturization of integrated circuits have led to smaller chip areas made available for devices. High density dynamic random access memory chips (DRAMs), for example, leave little room for the storage node of a memory cell. Yet, the storage node (capacitor) must be able to store a certain minimum charge, determined by design and operational parameters, to ensure reliable operation of the memory cell. It is thus increasingly important that capacitors achieve a high stored charge storage per unit area of the wafer. Accordingly, several techniques have been recently developed to increase the total charge capacity of the cell capacitor without significantly affecting the chip area occupied by the cell.
Traditionally, capacitors integrated into memory cells have been patterned after the parallel plate capacitor. An interelectrode dielectric material is deposited between two conductive layers, which form the capacitor plates or electrodes. The amount of charge stored on the capacitor is proportional to the capacitance, C=εε0A/d, where ε is the dielectric constant of the capacitor dielectric, ε0 is the vacuum permittivity, A is the electrode area, and d represents the spacing between electrodes. Some techniques for increasing capacitance therefore include the use of new materials characterized by high dielectric constants.
Other techniques concentrate on increasing the effective surface area of the electrodes by creating folding structures such as trench or stacked capacitors. Such structures better utilize the available chip area by creating three dimensional shapes to which the conductive plates and capacitor dielectric conform. For example, U.S. Pat. No. 5,340,765, issued to Dennison et al. and assigned to the assignee present invention, discloses a process for forming capacitor structures resembling cylindrical containers. A polycrystalline silicon (polysilicon) container is first formed, both the inside and outside surfaces of which are available for use as the bottom electrode. More complex structures, such as the container-within-container and multiple pin structures disclosed in U.S. Pat. No. 5,340,763, issued Aug. 23, 1994 to Dennison, may further increase electrode surface area and allow the extension of conventional fabrication materials to future generation memory devices. The capacitor dielectric and top electrode may then be successively deposited.
Electrode surface area may also be increased by providing a high surface area, rough texture to the electrode surface. One class of methods for providing rough electrode surfaces involves roughening polysilicon layers with preferential etch techniques. For example, U.S. Pat. No. 3,405,801, issued to Han et al., discloses a method of roughening a polysilicon layer by selectively etching at grain boundaries. Alternatively, U.S. Pat. No. 5,372,962, issued to Hirota et al., describes various selective etch processes for perforating a polysilicon layer.
Another class of electrode roughening techniques involves texturizing a conductive layer by formation of hemispherical grained (HSG) silicon. HSG silicon may be formed by a number of different methods, including gas phase nucleation and surface seeding. An extremely thin layer of oxide, for example, may serve as a seed layer for HSG growth to follow. Native oxide is allowed to grow over a previously deposited silicon layer. Polysilicon may then be deposited by low pressure chemical vapor deposition (LPCVD), and silicon grains grow preferentially about nucleation sites provided by the native oxide. Alternatively, nucleation sites may be provided by the deposition of dispersed particles as disclosed by U.S. Pat. No. 5,102,823, issued to Tuttle. In either case, during the initial stages of polysilicon deposition, the presence of these nucleation sites causes the formation of polysilicon nodules. During later stages of deposition, polysilicon will continue to coat the previously created nodules, resulting in stable, hemispherical polysilicon grains.
FIG. 1 is an exaggerated, close-up view of an HSG silicon layer 20 formed by an alternative, vacuum anneal process. A silicon layer is deposited and annealed at a critical temperature and pressure, inducing surface migration of silicon atoms. U.S. Pat. No. 5,407,534 issued to Thakur, for example, discloses one set of deposition and anneal parameters by which HSG silicon may be formed. Relatively large, hemispherical grains form by this redistribution, and the resultant HSG silicon layer 20 provides a much larger electrode surface area than planar polysilicon. As shown, the HSG silicon layer 20 is substantially contiguous, such than individual grains 22 tend to intersect one another. A capacitor dielectric may then be formed over the HSG silicon 20, and a conductive layer for the top electrode is deposited, in turn, over the capacitor dielectric.
While dielectric thickness (ōdö of the capacitance formula set forth above) should be minimized in order to maximize capacitance, too thin a capacitor dielectric risks leakage current across the capacitor electrodes. Leakage current may result from pinholes in the dielectric and quantum tunneling effects, both of which phenomena are more likely to occur with thinner dielectrics. Thin capacitor dielectric layers are thus characterized by a low breakdown voltage, limiting the charge which may be stored on the bottom electrode before breakdown leakage occurs. Accordingly, capacitor dielectric layers may be characterized by a certain minimal thickness necessary to avoid breakdown, depending upon the selected dielectric material. Where the dielectric comprises silicon nitride (Si3N4), for example, the layer should be at least about 50 Å.
FIG. 2 illustrates the HSG silicon 20 of FIG. 1 after a capacitor dielectric layer 23 has been deposited thereupon. The individual grains 22 of the HSG silicon 20 tend to intersect one another as illustrated, such that dielectric bridging occurs between grains, creating thicker dielectric between grains than over grain surfaces. The close-up view of FIG. 3 more clearly illustrates the discrepancy in dielectric 23 thickness in the boundary area 25 between individual hemispherical grains 22, and that over an upper surface area 26 of individual grains 22. The dielectric 23 of the boundary area 25 may reach twice as thick as the dielectric 23 in other areas, gradually reducing in thickness as the mouth of the boundary area widens.
If the dielectric 23 is deposited to the minimal thickness (e.g., 50-70 Å of Si3N4) in a boundary area 25, the dielectric 23 overlying the grains 22 will be too thin and lead to breakdown and operational data errors. Alternatively, when the dielectric 23 is deposited to the minimal thickness over HSG silicon grains, the dielectric of the boundary area 25 is too thick, leading to reduced capacitance and leaving too little room for conformal deposition (without voids or keyholes) of the top electrode material within the stacked capacitor. Too little capacitance for the memory cell may also lead to a high rate of soft data errors.
Accordingly, a need exists for a method of providing conformal dielectric layers for memory cell capacitors while maintaining high capacitance for the memory cell.
In accordance with one aspect of the present invention, a method is provided for fabricating a capacitor for an integrated circuit memory cell. The method comprises forming a layer of hemispherical grained (HSG) silicon for a bottom electrode structure in electrical contact with a circuit node. The individual grains of the HSG silicon are then separated from one another by dry etching the HSG silicon. A capacitor dielectric layer is then formed, substantially conformal with the etched HSG silicon layer. A top electrode is then deposited over the capacitor dielectric to complete the integrated capacitor.
In accordance with another aspect of the present invention, a method is provided for separating substantially contiguous silicon grains of a hemispherical silicon grain (HSG silicon) layer for an integrated capacitor electrode. The method comprises dry etching the HSG silicon layer prior to formation of a capacitor dielectric.
In accordance with yet another aspect of the present invention, a method is provided for fabricating a capacitor for an integrated circuit memory cell. The method comprises forming a conductive container, having a diameter of less than about 7,000 Å, lined with an interior hemispherical grained (HSG) textured layer. Less than about 250 Å of the interior HSG layer is removed by dry etch. Thereafter, a substantially conformal capacitor dielectric is formed over the interior HSG layer and a top electrode is formed over the capacitor dielectric.
Preferred embodiments are disclosed in which the dry etch comprises either a vapor etch or a plasma etch. The particular vapor etch disclosed comprises an HCl/HF vapor etch, while the particular plasma etch comprises an NF3/Ar plasma etch. Either etch may be isotropic, while the plasma may also be anisotropic. The dry etch may be controlled within precise limits to avoid overetching.
FIG. 1 is a schematic, cross-sectional representation of a layer of hemispherical grain (HSG) silicon, constructed in accordance with the prior art.
FIG. 2 illustrates the HSG layer of FIG. 2 after the deposition of a capacitor dielectric layer, in accordance with the prior art.
FIG. 3 illustrates a close-up view of the HSG layer and dielectric layer of FIG. 2.
FIGS. 4-8 illustrate generally a process of forming an integrated capacitor incorporating a uniformly thick dielectric layer over an HSG silicon layer, in accordance with preferred embodiments of the present invention.
Although the present description focuses on the context of a DRAM cell, it will be understood that the present invention may have utility in any application where a uniformly thick layer is desired over a layer having rough or high surface area. The invention has particular utility for stacked capacitors incorporated into highly dense memory chips.
FIG. 4 illustrates a partially fabricated DRAM memory cell 30 formed over a semiconductor substrate 31, in accordance with preferred embodiments of the present invention. A pair of word lines 32 are shown isolated by a plurality of vertical dielectric spacers 33, word line insulating caps 34 and a planarized insulating layer 35. A contact plug 36 forms electrical contact with an active area 37 between the word lines 32. The word lines 32 each overlie either a relatively thick field oxide 38 or a much thinner gate oxide 39. A bottom electrode is defined in electrical contact with the contact plug 36, the preferred bottom electrode taking the form of a container structure 40 superjacent the plug 36.
The memory cell 30 of the preferred embodiments is constructed by the general process sequence disclosed in U.S. Pat. No. 5,340,765, issued Aug. 23, 1994 to Dennison et al. It will be understood, however, that the container 40 of the preferred embodiments may be replaced with other bottom electrode configurations. The invention has particular utility for stacked capacitor structures, such as those disclosed in U.S. Pat. No. 5,234,355, issued to Rhodes et al. (stacked comb spacer capacitor); U.S. Pat. No. 5,236,860, issued to Fazan et al. (lateral extension capacitor); and U.S. Pat. No. 5,340,763, issued to Dennison (multiple. pins within container and container-within-container capacitor).
The preferred embodiments are adapted to extremely dense integrated circuits, such as 64 Mbit DRAM arrays, wherein circuit dimensions may be less than 0.7 μm. Dimensions of the preferred memory cell 30 are scaled down accordingly, relative to previous generations. For example, the preferred container 40 has a diameter between about 1 μm (micron) and 0.3 μm, and most preferably less than about 0.7 μm. The height of the container 40 is preferably between about 1.5 μm and 3 μm, and most preferably about 2.0 μm.
The container 40 may comprise any of a number of conductive materials, including but not limited to silicon, refractory metal suicides and metals, and includes a hemispherical grained (HSG) texture over at least part of the container 40 surface. The preferred container 40 comprises silicon, most preferably including an outer HSG silicon layer 41, a polysilicon layer 42, and an inner HSG silicon layer 43. The polysilicon layer 42 should be in-situ doped (e.g., with phosphine) for conductivity. The resultant bottom electrode may then utilize both outer and inner texturized surfaces for charge storage during circuit operation. It will be understood that, for alternative embodiments, the bottom electrode may comprise only a single HSG layer, and that the HSG layer may be formed in direct contact with a conductive plug or other circuit node.
The HSG silicon layers, 41 and 43, may be formed by any process known in the art of integrated circuit fabrication. Most preferably, however, layers of amorphous silicon sandwich the polysilicon layer 42 and are subjected to a vacuum anneal, causing a redistribution of silicon atoms in each amorphous silicon layer. U.S. Pat. No. 5,407,534, issued to Thakur and assigned to the assignee of the present invention, discloses such a texturizing vacuum anneal. The disclosure of this patent is hereby incorporated by reference.
A layer of amorphous silicon is formed on either side of the polysilicon 42 to a preferred thickness between about 500 Å and 1,500 Å, most preferably about 1,000 Å. The structure is preferably conductively doped and then heated to a temperature in the range of between 450░ C. and 800░ C., more preferably between about 560░ C. and 620░ C., most preferably around 600░ C., while the chamber pressure is maintained between about 1ū10−10 Torr and 1ū10−3 Torr. A fluorine-based gas (e.g., NF3, CF4, or C2F6Cl2), diluted with an inert gas (e.g., argon), is bled into the anneal chamber. The surface migration of the silicon atoms to the nucleation sites results in the formation of a rough or texturized, granular surface. The HSG silicon layers 41 and 43 created by the preferred process each have a thickness between about 500 Å and. 1,500 Å, and most preferably about 1,000 Å. Together with the polysilicon layer 42, these layers produce a total thickness for the walls of the container 40 between about 1.000 Å and 3,000 Å.
The resulting container 40, including the inner HSG silicon 41 and outer HSG silicon 43, forms the bottom or storage electrode of the memory cell 30 capacitor. Accordingly, in order to provide reasonable conductivity, the HSG silicon layers 41 and 43 may also be lightly doped with n-type dopants. Alternatively, the central polysilicon layer 42, which was doped in-situ, may serve as the dopant for all three silicon layers.
FIG. 5 is an enlarged cross-section of a surface 50 of the container, including an HSG silicon layer 41 or 43 merged with the underlying polysilicon layer 42. The illustrated section may represent either the outer HSG silicon 41 or the inner HSG silicon 43 seen in FIG. 4. As illustrated, the surface 50 resembles rounded hillocks and provides considerably greater surface for charge storage, as compared to planar electrodes. Individual silicon grains 52 of the HSG silicon 41 or 43 tend to intersect one another, creating narrow crevices 54 at boundaries. As described in the ōBackgroundö section above, these crevices 54 ordinarily result in non-uniformities in the thickness of a capacitor dielectric to be deposited over the surface 50 of the conductive container 40, and consequently lower capacitance.
The present invention provides a method of separating individual silicon grains 52, thereby widening the crevices 54 between grains 52. The dotted reference line in FIG. 5, for example, represents a modified surface 60 of the container 40 following an etch step in accordance with preferred embodiments of the present invention.
As disclosed in the co-pending U.S. Patent Application of Figura, entitled ōA Method for Increasing Capacitance of an HSG Rugged Capacitor Using A Post Deposition Wet Etch,ö Ser. No. 08/209,661, filed Mar. 11, 1994, and in the related co-pending U.S. Patent Application of Figura, entitled ōA Method For Increasing Capacitance of an HSG Rugged Capacitor Using A Phosphine Rich Oxidation and Subsequent Wet Etchö, Ser. No. 08/209,659, filed Mar. 11, 1994, increasing separation of HSG silicon grains reduces dielectric bridging between grains. Both of these pending applications are assigned to the assignee of the present invention, and are hereby incorporated by reference. A more uniformly thick dielectric layer may thus be deposited over the bottom electrode. This, in turn, results in an increased overall capacitance by allowing deposition of the minimal dielectric thickness which is still adequate to avoid most pinhole and tunneling leakage problems.
Although wet etching of HSG silicon is an inexpensive, effective method of increasing. capacitance for current integrated circuit density, precise control of etch rates is difficult. Even after removal from an etch bath, residual etchant must be rinsed away with deionized water and the wafer needs to be spun dry. Additionally, due to surface tension of a dilute etchant, wet etches may not be able to etch the narrow crevices 54 as quickly as the tops of silicon grains 52. A consequently nonuniform etch tends to level the HSG texture, reducing electrode surface area. Nonuniformity of the etch is exacerbated by having to punch through native oxide formed during transfer from the anneal chamber to the wet etch bath. Thus, in order to achieve a separation of silicon grains adequate to allow uniform dielectric deposition thereupon, wet etch may. require removing an average of 100 Å to 500 Å of silicon or oxide, and even more removal may result from the lack of control over the rate of etch., Exposed circuit structures are therefore subject to significant change in their dimensions.
For more dense circuitry, such as that of the preferred embodiments herein, such reduction of structural dimensions may lead to critical damage. After wet etch treatment for separation of silicon grains 52, this dimension may be reduced by as much as 1,000 Å or even higher (since the walls of the container 40 are etched from both sides), further risking breakage of already delicate structures. Wet etch also entails a greater risk of causing shorts and bridges (through undercutting other device structures in the chip) where utilized in conjunction with higher density circuits. Post-wet etch rinse and spin-dry may also damage circuit structures. Other exposed structures may include interconnects, depending upon the process flow, and excessive thinning of interconnect could lead to intolerably high interconnect resistance.
The present invention therefore utilizes a dry etch process for separating silicon grains. The dry etch tends to reach into narrow crevices 54 between grains 52 more easily than wet etch, permitting a quicker separation etch and correspondingly less damage to structures which should not be etched. Dry etch may also be controlled within very tight limits, thus allowing precise etch rate and avoiding overetch after adequate separation has been achieved. Furthermore dry etch in general provides the ability to control etch directionality. Like wet etch, dry etch (such as vapor etches) may be isotropic. On the other hand, dry etch may be chosen to provide anisotropic etching (e.g., single frequency plasma etch) where desired, employing variable degrees of lateral and vertical etch. Additional advantages of dry etch stem from reduced contamination of materials exposed to the etch, elimination of the need for damaging rinse and spin-dry steps, and the possibility of performing dry etch in-situ following HSG silicon formation.
FIGS. 6 and 7 illustrate the result of a dry HSG silicon etch, in accordance with preferred embodiments of the present invention. In accordance with a first preferred embodiment, the HSG surface 50 is treated with a vapor etch to separate the individual grains 52 and widen the inter-grain crevices 54, seen in FIG. 5. The vapor chemical should etch the entire silicon surface 50 evenly, including top surfaces of the grains 52 and the crevices 54, although alternative embodiments may be adjusted for anisotropic etch. The first embodiment utilizes a vapor form of hydrofluoric acid (HF) to accomplish this etch. Unlike wet (liquid) etch, HF vapor may reach into small spaces such as the intergrain crevices 54. HF may clean any native oxide which may form over the HSG silicon surface 50. Accordingly, the HF etch of the first preferred embodiment may be employed in-situ (within the chamber in which HSG silicon is formed) or ex-situ. Preferably, temperature is maintained between 0░ C. and 100░ C. for this embodiment, and most preferably about 30░ C. Pressure should be maintained between about 100 mTorr and about 1,000 mTorr.
The vapor etch of the first embodiment further includes a later step of etching the silicon of the HSG surface 50 with a vapor form of hydrochloric acid (HCl). Preferably, temperature is maintained between 100░ C. and 800░ C. for this embodiment, and most preferably about 600░ C. The container 40 should be etched under these conditions for between about 10 seconds and 60 seconds, and most preferably about 20 seconds.
FIG. 6 illustrates the container 40 after the etch in accordance with the first preferred embodiment. The modified surface 60 is recessed from the unetched surface 50 (FIG. 5) by the amount of silicon etched. For the preferred container 40 dimensions, between about 20 Å and 500 Å, more preferably less than about 200 Å, and most preferably about 100 Å of silicon has been removed by the vapor etch. It will be understood by the skilled artisan, of course, that more or less may be etched (by varying the time of exposure to the vapor etch) according to tolerances of the capacitor design. Smaller individual grains 62 are left, but the total surface area remains relatively constant since deeper troughs 64 are left in place of the crevices 54 (FIG. 5). The troughs 64 are also widened relative to the crevices (54), as illustrated.
Referring to FIG. 7, the etched surface 60 of FIG. 6 is shown after deposition of a uniformly thick dielectric layer 66. Due to the separation etch of the first embodiment, the dielectric layer 66 may be deposited to a uniform thickness over the smaller grains 62 and into the widened troughs 64. Accordingly the minimal dielectric thickness, consistent with considerations of tunneling and pinhole leakage, may be formed over the entire modified surface 66 of the container 40. For example, in the preferred embodiments, the dielectric 66 comprises silicon nitride having a thickness between about 50 Å and 200 Å, more preferably between about 50 Å and 70 Å, and most preferably about 60 Å. The dielectric 66 is preferably formed by known chemical vapor deposition (CVD) processes, thus ensuring highly uniform deposition.
In accordance with a second preferred embodiment of the present invention, the separation etch step comprises a plasma etch. As with the first preferred embodiment, the plasma etch comprises a dry silicon etch. Unlike the first embodiment, the plasma etch may be anisotropic and tailored to a desired directionality or proportions of vertical and lateral etch. Most preferably, however, the plasma etch of the second embodiment is isotropic, producing the same etch profile 60 as illustrated in FIG. 6. The plasma etch may be achieved, for example, by etching in a dual frequency plasma reactor, employing two cathodes alternating electric fields at different frequencies. A resultant high density plasma attacks all silicon surfaces evenly. Alternatively, isotropic etch may be accomplished by varying pressure parameters and by varying the length of power ōoffö time for an intermittent pulsed electric field, as disclosed in U.S. Pat. No. 5,160,408, issued Nov. 3, 1992 to Long and assigned to the assignee of the present invention. The disclosure of this patent is hereby incorporated by reference.
Preferably, the plasma gas comprises a fluorine gas and an inert carrier gas, most preferably NF3 and argon, in a dual frequency plasma etch reactor, while the wafer itself serves as a common ground. NF3 comprises between 0% and 100% of the gas volume, more preferably between about 5% and 40%, and most preferably about 20%. For example, the NF3 flow may comprise about 30 sccm, depending upon reactor volume. RF power for each channel is maintained between about 50 W and 1,000 W, more preferably between about 100 W and 500 W, and most preferably about 200 W, while the two cathodes alternate at 13.5 MHz and 400 kHz Pressure should be maintained between about 1 mTorr and about 500 mTorr, more preferably between about 5 mTorr and 20 mTorr. The etch should be performed in-situ to avoid formation of native oxide, and should be performed for between about 10 seconds and 100 seconds, and most preferably about 20 seconds.
The parameters for the plasma etch of the second embodiment are set to provide isotropic etching of between about 20 Å and 500 Å, and most preferably about 100 Å, similar to the result of vapor etching in accordance with the first embodiment. FIG. 6 thus represents modified surface 60 of the container 40 produced by either of the described embodiments. In either case, a uniformly thick dielectric 66 is deposited over the etched surface 60, as shown in FIG. 7, serving as the capacitor dielectric.
Referring now to FIG. 8, the container 40 is illustrated after a top electrode 80 has been deposited over the conformal dielectric layer 66, thus completing the capacitor for the memory cell 30. The top electrode 80 comprises a conductive material such as polysilicon. Although illustrated as patterned, the top electrode 80 may also take the form of a common reference electrode for the DRAM array. From this point, the DRAM array may be completed by conventional fabrication processes.
It will be understood from the description set forth above that the present invention provides a method for increasing capacitance of an integrated circuit capacitor. In particular, individual grains of a hemispherical grained silicon layer may be separated, by means of the described method, prior to formation of the capacitor dielectric. At the same time, the method is controllable such that critical dimensions of circuit structures are not overetched. Further advantages of the present invention include versatility, optional directional etching, lowered risk of contamination and consequent data errors or circuit failure, and the elimination of a rinse and spin-dry step ordinarily following wet etches. Overall reliability of the memory cells created by processes incorporating the present invention may be markedly improved, particularly for densely packed circuits such as 64 Mbit DRAMs and beyond.
Although the foregoing invention has been described in terms of certain preferred embodiments, other embodiments will become apparent to those of ordinary skill in the art, in view of the disclosure herein. Accordingly, the present invention is not intended to be limited by the recitation of preferred embodiments, but is instead intended to be defined solely by reference to the appended claims.
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The Wild Hunt blog is a must-read for those interested in news and events dealing with the modern Pagan and Heathen communities – and religion coverage in general. – M.Z. Hemingway, Get Religion
…a source for smart commentary on a broad range of news, media, and ideas from a pagan perspective. – Jeff Sharlet, author of "The Family: The Secret Fundamentalism at the Heart of American Power".
The Wild Hunt is primary destination for those interested in following news and commentary relating to modern Paganism and other minority religions. Founded by Jason Pitzl-Waters in 2004, The Wild Hunt has grown to become one of the most-visited and popular destinations exploring these topics.
In the Summer of 2011, The Wild Hunt was recruited to Patheos.com. But after a year of substantial growth, The Wild Hunt decided to return to being an independent entity. In the fall of 2012, The Wild Hunt welcomed its first weekly contributing writers and monthly columnists. Since then, it has blossomed into an independent media outlet with 3 weekly writers and 8 dedicated columnists.
It is our mission to honor our roots in serving our readership with the stories, news and commentary that originate from within our communities and affect our communities.
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Mercury Reduction in Washington
Ecology and the Department of Health worked with stakeholders to develop Washington's Mercury Chemical Action Plan in 2003. See here for updates on mercury reduction in Washington state.
Mercury Products and Sources
Auto Switches | Thermostats | Switches and Relays | Thermometers Barometers and Altimeters | Dairy Manometers | Dental Waste | Lamps/ Light Bulbs | Batteries | Novelties and Toys | Medicine | Manufacturing | Mining | Power Plants | Biosolids | Incinerators
Mercury Laws, Rules and Plans
Mercury Education and Reduction Act (MERA)| Mercury Chemical Action Plan | Persistent Bioaccumulative Toxics Rule | Universal Waste Rules
Mercury and Its Compounds
Toxicity and Health Effects | Historical Uses of Mercury
Mercury Reduction Data
Total Reductions | Fish Tissue | Mercury in Biosolids | Deposition in Core Samples | Toxics Release Inventory (TRI) Emissions | Thermostats Recycled | Landfill Gas | Mercury Deposition Network
Mercury-reduction Partnerships
Related information
Watch the Mercury Drop
Manage Waste for Auto Recyclers
Ecology leads on reducing toxics, joins EPA's partnership
How to Build a Bulb Carrier from a reused six-pack beverage carrier.
Bulb Clean-up cleaning up a broken mercury-containing bulb
Copyright © Washington State Department of Ecology. See http://www.ecy.wa.gov/copyright.htm


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Includes a set of 12 mirror finish corners (each approximately 2.75" x 2.75") and 12 nameplates (approximately 2.75" x 1"). Removable and reusable. Made in the U.S.
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A collection of news and information related to Gaming and Lotteries published by Tribune Company sources. (Photo AP)
A collection of news and information related to Gaming and Lotteries published by Tribune Company sources. (Photo AP) « Show less
Top Lotteries Articles
Displaying items 34-44
Clock ticking on unclaimed $100,000 Va. lottery ticketStory | Mar 13, 2015 | 12:04 AMThe clock is ticking on a $100,000 prize. The Virginia lottery says someone bought the winning ticket last September in Portsmouth but has yet to step forward. The ticket expires March 25. The $100,000 prize awaits the holder of a Sept. 26 Cash 5...
A lotto bad luck: Car stolen while man bought lottery tickets
He won the lottery! But lost his ticket
Newington OKs $1.35M Contract For Aerospace AcademyStory | Mar 12, 2015 | 2:24 PMNEWINGTON — The town council has awarded a contract for the new aerospace academy at John Wallace Middle School, clearing the way for work to begin. "It feels great," Superintendent William C. Collins said. "Everything is coming together." Scope...
Rocky Gap owner defends merger with Las Vegas firm
Fork Union man wins $2M Powerball prizeStory | Mar 11, 2015 | 3:40 PMA Fork Union man has collected a $2 million Powerball prize. Virginia Lottery officials on Wednesday presented the check to David Vaughan at the E.W. Thomas Grocery in Palmyra, where he bought the ticket for the March 4 drawing. Vaughan matched the...
Man attracts no luck: His car stolen while buying lottery tickets
North Carolina editorial roundupStory | Mar 11, 2015 | 1:09 PMRecent editorials from North Carolina newspapers: March 8 The News & Observer, Raleigh, on proposed bill to allow drivers to pass a car in a no-passing lane: In the newspaper business, reporters joke that news is what editors see on their way to work....
Connecticut lawmakers, tribes voice support for new casinosStory | Mar 10, 2015 | 4:29 PMA coalition of Connecticut legislators, the state's two federally recognized Indian tribes and union leaders joined forces Tuesday to announce they're backing a bill that would allow up to three new, smaller casinos to help combat gambling competition...
State lottery and gaming chief stepping down
Bill would put lottery winnings by sex offenders in escrow


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Leica C cable
Started 9 months ago | Questions thread
Forum Member • Posts: 64 • Gear list
Leica C cable
9 months ago
I have misplaced my charging/USB cable. Anyone know a good replacement for it?
-- hide signature --
Thanks Lonnie
Olympus OMD
Panasonic 14-45
Panasonic 45-200
PL 45 mm Macro
Leica C
Lonnie Janzen's gear list:Lonnie Janzen's gear list
Leica C Olympus OM-D E-M5 Panasonic Lumix G Vario 14-45mm F3.5-5.6 ASPH OIS Panasonic Leica DG Macro-Elmarit 45mm F2.8 ASPH OIS Panasonic Lumix G Vario 45-200mm F4-5.6 OIS +2 more
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This photo has one question
June 28, 2013
luisg144 wrote:
The Shabby Nest
If you click on the green 'more info' link below the photo or on the photo itself if there is no 'more info' link, it will take you to a page that has a link to the online source for this item. You should be able to find the info you need there.
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Good L Desk and hideaways for computer parts
Harbor View Collection Corner Computer Desk
Features: -Corner computer desk.-Perfect easy-living cottage look, an eclectic piece of graceful yet simple detailing is highlighted.-Heat, stain and scratch resistant.-Lower drawer holds letter or European size hanging files.-Storage area behind door holds vertical CPU tower.-Two smaller drawers for storage on metal runners.-Slideout shelf for keyboard and mouse.-Made in USA.-Top surface construction American cherry melamine.-Harbor view collection.-Distressed: Yes.-Collection: Harbor View.-Country of Manufacture: United States.-Desk Type: Computer Desk.-Top Finish: Melamine with American Cherry Accent.-Accent Finish: American Cherry.-Powder Coated Finish: No.-Gloss Finish: No.-UV Finish: No.-Top Material : Engineered wood.-Base Material: Engineered wood.-Hardware Material: Wood.-Edge Detail: Rounded.-Non-Toxic: Yes.-Water Resistant: No.-Stain Resistant: Yes.-Heat Resistant: Yes.-Style: Cottage.-Design: Rectangular.-Eco-Friendly: Yes.-Cable Management: Yes.-Keyboard Tray: Yes.-Height Adjustable: No.-Drawers Included: Yes -Number of Drawers: 3.-File Drawer: Yes.-Drawer Glide Material : Metal runners with safety stops.-Safety Stop : Yes.-Soft-Close Drawer: Yes.-Locking Drawer: No.-Ball Bearing Glides: Yes.-Joinery Type : Hidden cams and dowels.-Drawer Handle Design: Knobs..-Pencil Drawer: No.-Jewelry Tray: No.-Exterior Shelving : No.-Cabinets Included: Yes -Number of Cabinets: 1.-Locking Cabinet: No..-Ergonomic Design: No.-Handedness: both.-Scratch Resistant: Yes.-Chair Included: No.-Legs Included: No.-Hutch Included: No.-Treadmill Included: No.-Cork Back Panel: No.-Modesty Panel : Yes -Modesty Panel Details: Half..-CPU Storage: Yes.-Built In Outlet: No.-Built In Surge Protector: No.-Light Included: No.-Finished Back: Yes.-Tipping Prevention: No.-Modular: Yes -Modular Details: Drawers and doors can be fastened on left or right side..-Lifestage: Teen-adult.-Compatibility: Accepts Hutch #403786.-Commercial Use: No.-Product Care: Wipe with damp cloth.-Swatch Available: Yes.-Recycled Content: Yes -Remanufactured/Refurbished : No..Specifications: -FSC Certified: Yes.-EPP Certified: Yes.-CARB Compliant: Yes.-ISTA 3A Certified: Yes.-Green Guard Certified: No.-ANSI BIFMA Certified: No.-SCS Certified: No.Dimensions: -Overall Height - Top to Bottom: 30.28".-Overall Width - Side to Side: 93.5".-Overall Depth - Front to Back: 20.5".-Desk Return: No.-Credenza: No.-Bridge: No.-Cabinet: -Cabinet Interior Height - Top to Bottom: 23.25".-Cabinet Interior Width - Side to Side: 14.125".-Cabinet Interior Depth - Front to Back: 19.5"..-Drawer: Yes.-Shelving: Yes.-Seat: No.-Desktop Height: 30.25".-Desktop Width - Side to Side: 93.5".-Desktop Depth - Front to Back: 22".-Knee Space Height: 25.37".-Hutch : No.-Legs: No.-Overall Product Weight: 179 lbs.Assembly: -Assembly required.-Assembly Required: Yes.-Tools Needed: Phillips screwdriver and hammer.-Additional Parts Required: No.Warranty: -Manufacturer provides 5 year warranty.-Product Warranty: 5 years.
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text:
SOCHI, Russia (AP) — An Italian activist shouting "It's OK to be gay" and dressed in a rainbow-colored outfit and large headdress was detained Monday as she entered an arena to watch an Olympic hockey game.
Gay-rights activist detained at Olympic Park
Vladimir Luxuria, a former Communist lawmaker in the Italian parliament who has become a prominent transgender rights crusader and television personality, was stopped by four men and then driven away by police in a car with Olympic markings.
Luxuria later told The Associated Press she was kept in the car for about 10 minutes, then released in the countryside after the men had taken away her Olympic spectator pass. She eventually made it back to her hotel and said she was leaving Russia on Tuesday morning.
"They don't say anything. They just were people who had to do this and they did it," Luxuria said.
Earlier Monday, Luxuria walked around the Olympic Park in Sochi for about two hours. She was shouting "Gay is OK" and "It's OK to be gay" in both English and Russian.
As she was being led away from Shayba Arena, she was shouting "I have a ticket."
Luxuria said she was detained on Sunday evening by Russian police who told her she should not wear clothes with slogans supporting gay rights. Police denied detaining her.
The Italian activist walked around the Olympic Park on Monday with a group of journalists, attracting onlookers. Some Russian fans stopped to pose for photos with her.
Luxuria and her colorful outfit did not attract much negative reaction except for a group of young Russian men who shouted to television cameras in broken English: "Trans not good."
Luxuria arrived at a ticket inspection barrier at the hockey arena just before an evening game was due to begin. She passed through the barrier and was being given directions to her seat when four men who were not wearing any identification surrounded her and started shouting "take her away." They then led her out of the venue and to the parking lot.
"I was very, very afraid this time because the first time they said, 'It's OK for the first time, don't do it again for the second time.' So, this time I was a little bit afraid," Luxuria said. "But they just left me outside, in the country, there, outside and that's it."
Continue reading this story on the...


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Property to let in Inverness Place, Roath, Cardiff CF24 - 2 bedrooms
£750 pcm (£173 pw)
Inverness Place, Roath, Cardiff CF24Property to rent - 2 bedrooms 689 sq. ft*
Kingstons Letting presents a 2 double bedroom house, located off Albany Rd, Cardiff. The property encompases a large lounge/dining area and a separate kitchen at the rear of the property which is brand new fitted. The property is double glazed with ... More details
Note: Distances are straight line measurements
- Cathays (0.5 miles)
- Cardiff Queen Street (0.8 miles)
Marketed by Kingstons, CF24. Call 029 2168 0117£850 pcm (£196 pw)
Inverness Place, Roath, Cardiff CF24Flat to rent - 2 bedrooms
***all bills included!*** View is pleased to offer for rent this 2 bedroom, first floor flat on Inverness Place in Roath. Furnished to a high standard throughout, with rent including all bills, this property briefly comprises of a fitted kitchen, ... More details
Note: Distances are straight line measurements
- Cathays (0.5 miles)
- Cardiff Queen Street (0.9 miles)
Marketed by View Properties, CF24. Call 029 2227 3529
* Sizes listed are approximations. Please contact the agent to verify actual sizes.


text:
Feds: Online Novel Model for Ga. Militia Plot
Feds: Online Novel Model for Ga. Militia Plot
35 results for 'indicted'. Showing results 19 - 35
Feds: Online Novel Model for Ga. Militia Plot
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text:
Hampton Inn & Suites Greenville, Greenville
Situated in Greenville, Hampton Inn & Suites Greenville is close to Crossroads Mall, Fletcher Warren Civic Center, and Audie Murphy Museum. Also nearby is Hunt County Fairgrounds.
Hotel Features.
Hampton Inn & Suites Greenville has an outdoor pool, a spa tub, and a fitness center. There is a business center on site. Dining options at this Greenville hotel include a restaurant and a bar/lounge. A complimentary breakfast is available. Complimentary self parking is available onsite for guests. This is a smoke-free property.
The 75 guestrooms at Hampton Inn & Suites Greenville include coffee/tea makers and hair dryers. Televisions are equipped with pay movies.
Everything was clean and comfortable. Very nice room.
Nice hotel that is very clean. Bed is comfortable. Breakfast is what you hope for from a…
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Hotel Info: 020 3027 9803from £64
- One king studio sofabed non smoking
- Two queen beds non smoking
- One king bed non smoking
- One king study sofabed non smoking
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- This hotel has 75 rooms
- This hotel is arranged over 4 floors
- Check-in time starts at 3 PM
- Check-out time is 11 AM
Required at check in
- Credit card or cash deposit required
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- Free self parking
Other information
- Smoke-free property
Nearby Two Star Greenville hotels
In the hotel
- Free hot/cold buffet breakfast
- Restaurant
- Bar/lounge
- Outdoor pool
- Fitness facilities
- Spa tub
- Business center
- Safe-deposit box at front desk
- In-room accessibility
In the room
- Coffee/tea maker
- Iron/ironing board
- Bathtub only
- Hair dryer
- Pay movies
- Cable/satellite TV channels
- Microwave