text:
An oxide etching process, particularly useful for selectively etching oxide over a feature having a non-oxide composition, such as silicon nitride and especially when that feature has a corner that is prone to faceting during the oxide etch. The invention uses a heavy perfluorocarbon, for example, hexafluorobutadiene (C4F6) or hexafluorobenzene (C6F6). The fluorocarbon together with a substantial amount of a noble gas such as argon is excited into a high-density plasma in a reactor which inductively couples plasma source power into the chamber and RF biases the pedestal electrode supporting the wafer. A more strongly polymerizing fluorocarbon such as difluoromethane (CH2F2) is added in the over etch to protect the nitride corner. Oxygen or nitrogen may be added to counteract the polymerization. The same chemistry can be used in a magnetically enhanced reactive ion etcher (MERIE) or with a remote plasma source.
1. An oxide etch process for etching an oxide layer over a non-oxide layer, comprising the steps of:
flowing into a plasma reaction chamber an etching gas mixture comprising (a) a heavy fluorocarbon selected from the group consisting of hexafluorobutadiene, (b) a hydrofluoromethane, (c) a polymerization counteracting gas selected from the group of oxygen gas and nitrogen gas; and (d) a chemically inactive gas selected from the group of argon and xenon, a diluent flow of said chemically inactive gas being at least equal to an active flow of said heavy fluorocarbon; and
RF biasing a pedestal electrode supporting a substrate having an oxide layer overlying a nitride layer and exciting said etching gas mixture into a plasma to thereby etch said oxide layer selectively to said non-oxide layer.
2. The process of
3. The process of
4. The oxide etch process of
5. The process of
6. The process of
7. The process of
8. The process of
9. The process of
10. The process of
11. The process of
12. The oxide etch process of
13. The process of
14. The oxide etch process of
15. The process of
16. The oxide etch process of
17. The oxide etch process of
18. A method of etching an oxide layer over a silicon-containing non-oxide layer, comprising the steps of
flowing into a plasma reactor a gas mixture comprising a (a) a fluorocarbon gas including hexafluorobutadiene, (c) a hydrofluoromethane, (c) a polymerization counteracting gas selected from the group consisting of nitrogen gas and oxygen gas, (d) and a chemically inactive gas but not comprising carbon monoxide;
supporting a substrate containing said oxide layer over said non-oxide layer on a pedestal electrode; and
exciting said gas mixture into a plasma including applying RF power to said pedestal electrode to thereby etch said oxide layer sciectively to said non-oxide layer.
19. The method of
20. The method of
21. The method of
22. The method of
23. The method of
24. The method of
25. The method of
26. The method of
27. A method of etching an oxide layer over a silicon-containing non-oxide layer in a capacitively coupled reactor, comprising the steps of:
flowing into a plasma reactor a gas mixture comprising hexafluorobutadiene, oxygen gas, hydrofluoromethane, and argon;
supporting a substrate containing said oxide layer over said non-oxide layer on a pedestal electrode; and
applying RF power to said pedestal electrode to thereby excite said gas mixture into a plasma to thereby etch said oxide layer selectively to said non-oxide layer.
28. The method of
29. The method of
30. The method of
31. The method of
32. The method of
33. The method of
34. A dual damascene etch process for etching an oxide layer overlying a stop layer, comprising the steps of:
providing a substrate having a dielectric level including a lower oxide layer, an upper oxide layer, and a silicon nitride layer intermediate said upper and lower oxide layers;
flowing into a plasma reaction chamber an etching gas mixture comprising hexafluorobutadiene and a chemically inactive gas but including essentially no oxygen-containing gas; and
exciting said etching gas mixture into a plasma to etch said upper oxide layer with selectivity to said silicon nitride layer, whereby said silicon nitride layer operates as said stop layer.
35. The process of
36. The process of
37. The process of
38. A dual damasceue etch process for etching an oxide layer underlying a masking layer, comprising the steps of
providing a substrate having a dielectric level including a lower oxide layer, an upper oxide layer, and a silicon nitride layer intermediate said upper and lower oxide layers and having during a portion of said etch process formed therein an aperture surrounded by a exposed upper surface of said silicon nitride layer;
flowing into a plasma reaction chamber an etching gas mixture comprising hexafluorobutadiene and a chemically intactive gas but including essentially no oxygen-containing gas; and
exciting said etching gas mixture into a plasma to etch said lower oxide layer with selectivity to said silicon nitride layer, whereby said silicon nitride layer operates as said masking layer.
39. The process of
40. The process of
41. The process of
This application is a division of Ser. No. 09/276,311, filed Mar. 25, 1999 now U.S. Pat. No. 6,387,287, issue fee paid.
The invention relates generally to etching of silicon integrated circuits. In particular, the invention relates to etching silicon oxide and related materials in a process that is capable of greatly reduced etching rates for silicon nitride and other non-oxide materials but still producing a vertical profile in the oxide.
In the fabrication of silicon integrated circuits, the continuing increase in the number of devices on a chip and the accompanying decrease in the minimum feature size have placed increasingly difficult demands upon many of the many fabrication steps used in their fabrication including depositing layers of different materials onto sometimes difficult topologies and etching further features within those layers.
Oxide etching has presented some of the most difficult challenges. Oxide is a somewhat generic term used for silica, particularly silicon dioxide (SiO2) although slightly non-stoichiometric compositions SiOx are also included, as is well known. The term oxide also covers closely related materials, such as oxide glasses including borophosphosilicate glass (BPSG). Some forms of silicon oxynitride are considered to more closely resemble an oxide than a nitride. Small fractions of dopants such as fluorine or carbon may be added to the silica to reduce its dielectric constant. Oxide materials are principally used for electrically insulating layers, often between different levels of the integrated circuit. Because of the limits set by dielectric breakdown, the thickness of the oxide layers cannot be reduced to much below 0.5 to 1 μm. However, the minimum feature sizes of contact and via holes penetrating the oxide layer are being pushed to well below 0.5 μm, the current developmental goal being 0.18 μm with further decreases being planned. The result is that the holes etched in the oxide must be highly anisotropic and must have high aspect ratios, defined as the depth to the minimum width of the hole. A further problem arises from the fact that the underlying silicon may be formed with active doped regions of thicknesses substantially less than the depth of the etched hole (the oxide thickness). Due to manufacturing variables, it has become impossible to precisely time a non-selective oxide etch to completely etch through the silicon oxide without a substantial probability of also etching through the underlying active silicon region.
The required anisotropy can be achieved by dry plasma etching in which a fluorine-containing etching gas, typically a fluorocarbon, is electrically excited into a plasma. The plasma conditions may be adjusted to produce highly anisotropic etching in many materials. However, the anisotropy should not be achieved by operating the plasma reactor in a purely sputtering mode in which the plasma ejects particles toward the wafer with sufficiently high energy that they sputter the oxide. Sputtering is generally non-selective, and high-energy sputtering also seriously degrades semiconducting silicon exposed at the bottom of the etched contact hole.
In view of these and other problems, selective etching processes have been developed which depend more upon chemical effects. These processes are often described as reactive ion etching (RIE). A sufficiently high degree of selectivity allows new structures to be fabricated without the need for precise lithography for each level.
An example of such an advanced structure is a self-aligned contact (SAC), illustrated in the cross-sectional view of
An oxide field layer 18 is deposited over this previously defined structure, and a photoresist layer 20 is deposited over the oxide layer 18 and photographically defined into a mask. A subsequent oxide etching step etches a contact hole 22 through the oxide layer 18 and stops on the portion 24 of the nitride layer 14 underlying the hole 22. It is called a contact hole because the metal subsequently deposited into the contact hole 22 contacts underlying silicon rather than a metallic interconnect layer. A post-etch sputter removes the nitride portion 24 at the bottom 15 of the gap 12. The silicon nitride acts as an electrical insulator between the gate structure 10 and the metal, usually aluminum, which is thereafter filled into the contact hole 22.
Because the nitride acts as an insulator, the SAC structure and process offer the advantage that the contact hole 22 may be wider than the width of the gap 12 between the gate structures 10. In advanced devices, the gap 12 may be very small, less than 10 nm while the width of the contact hole 22 may be significantly larger. Additionally, the photolithographic registry of the contact hole 22 with the gate structures 10 need not be precise. The imprecise definition of the mask in the photoresist layer 20 may place one side of the contact hole 22 near the middle of the gap 12. Nonetheless, this may still provide a good contact. However, to achieve these beneficial effects, the SAC oxide etch must be highly selective to nitride. That is, the process must produce an oxide etch rate that is much greater than the nitride etch rate. Numerical values of selectivity are calculated as the ratio of the oxide to nitride etch rates. Selectivity is especially critical at the corners 26 of the nitride layer 14 above and next to the gap 12 since the corners 26 are the portion of the nitride exposed the longest to the oxide etch. Furthermore, they have a geometry favorable to fast etching that tends to create facets at the corners 26. The corners of the gate structures 10 will thereby be prematurely exposed if the faceting is severe enough.
Furthermore, increased selectivity is being required as a result of chemical mechanical polishing (CMP) being used to planarize an oxide layer deposited onto a curly wafer. The polishing planarization produces a flat top surface in the oxide layer over the wavy underlying substrate, thereby producing an oxide layer of significantly varying thickness. To compensate for this variable thickness, the time of the oxide etch must be set significantly higher, say by 100%, than the etching time for the design thickness to assure penetration of the variable thickness oxide. This extra etching time is called over etch, which also accommodates other process variations. However, for the regions with a thinner oxide, the nitride is exposed that much longer to the etching environment.
Ultimately, the required degree of selectivity is reflected in the probability of an electrical short through the nitride layer 14 between one of the gate structures 10 and the metal filled into the contact hole 22. The etch must also be selective to photoresist, for example at facets 28 that develop at corners of the mask 20, but the requirement of photoresist selectivity is not so stringent since the photoresist layer 20 may be made much thicker than the nitride layer 14.
In the future, the most demanding etching steps are projected to be performed with high-density plasma (HDP) etch reactors. Such HDP etch reactors achieve a high-density plasma having a minimum average ion density of 1011 cm−3 across the plasma exclusive of the plasma sheath. Although several techniques are available for achieving a high-density plasma such as electron cyclotron resonance and remote plasma sources, the commercially most important technique involves inductively coupling RF energy into the source region. The inductive coil may be cylindrically wrapped around the sides of chamber or be a flat coil above the top of the chamber or represent some intermediate or combination geometry.
An example of an inductively coupled plasma etch reactor is the Inductive Plasma Source (IPS) etch reactor, which is available from Applied Materials and which Collins et al. describe in U.S. patent application Ser. No. 08/733,544, filed Oct. 21, 1996 and in European Patent Publication EP-840,365-A2. As shown in
Processing gas is supplied from one or more bottom gas feeds 48 through a bank of mass flow controllers 50 under the control of a system controller 52, in which is stored the process recipe in magnetic or semiconductor memory. Gas is supplied from respective gas sources 54, 56, 58. The conventional oxide etch recipe uses a combination of a fluorocarbon or hydrofluorocarbon and argon. Octafluorocyclobutane (C4F8) and trifluoromethane (CHF3) are popular fluorocarbons, but other fluorocarbons, hydrofluorocarbons, and combinations thereof are used, and these other etching gases are the subject of at least part of this invention.
An unillustrated vacuum pumping system connected to a pumping channel 60 around the lower portion of the chamber maintains the chamber at a preselected pressure, as set by the controller 52.
The controller 52 controls the various reactor element according to the etch recipe and thus determines the etch process.
In the used configuration, the silicon roof 42 is grounded, but its semiconductor resistivity and thickness are chosen to pass generally axial RF magnetic fields produced by an inner inductive coil stack 62 and an outer inductive coil stack 64 powered by respective RF power supplies 66, 68. A single RF power supply and an RF power splitter may be substituted. In the IPS reactor used in the experiments to be the described, the frequencies of the three RF power supplies are all different and in the low megahertz range.
Optical emission spectroscopy (OES) is a conventional monitoring process used for end-point detection in plasma etching. An optical fiber 70 is placed in a hole 72 penetrating the chamber wall 40 to laterally view the plasma area 74 above the wafer 30. An optical detector system 76 is connected to the other end of the fiber 70 and includes one or more optical filters and processing circuitry that are tuned to the plasma emission spectrum associated with the aluminum, copper, or other species in the plasma. Either the raw detected signals or a trigger signal is electronically supplied to the controller 52, which can use the signals to determine that one step of the etch process has been completed as either a new signal appears or an old one decreases. With this determination, the controller 52 can adjust the process recipe or end the etching step according to the power levels set primarily in the source power supplies 66, 68.
The IPS chamber is highly flexible in operation. It can produce a high-density or a low-density plasma. The temperature of the silicon surfaces and of the wafer can be controlled. The bias power applied to the cathode 32 by the bias power supply 34 can be adjusted independently of the source power applied to the coils 62, 64.
It has become recognized, particularly in the use of HDP etch reactors, that selectivity in an oxide etch can be achieved by a fluorocarbon etching gas forming a polymer layer upon the non-oxide portions, thereby protecting them from etching, while the oxide portions remain exposed to the etching environment. Polymer forming on the oxide sidewalls also promote vertical etching profiles. It is believed that the temperature controlled silicon ring 36 and roof 42 in the reactor of
Further, the chemistry may be such that the polymer formation depends critically upon the processing conditions. It may be possible to achieve high selectivity with processing conditions produced by one set of processing parameters, but very small variations in those conditions may be enough to substantially reduce the selectivity on one hand or to produce etch stop on the other. Such variations can occur in at least two ways. The conditions at the middle of the wafer may vary from those at the center. Furthermore, the conditions may change over time on the order of minutes as the chamber warms up or on the order of days as the equipment ages or as chamber parts are replaced. It is felt that hardware can be controlled to no better than �5 or 6%, and a safety margin or 3 to 6 is desired. Mass flow controllers 46 are difficult to control to less than �1 sccm (standard cubic centimeter per minute) of gas flow so gas flows of any constituent gas of only a few sccm are prone to large percentage variations.
These factors indicate that a commercially viable etch process must have a wide process window. That is, moderate variations in such parameters as gas composition and chamber pressure should produce only minimal changes in the resultant etching.
Several oxide etch processes have been proposed which rely upon higher-order hydrogen-free fluorocarbons and hydrofluorocarbons, both generically referred to as fluorocarbons. Examples of higher-order fluorocarbons are fluoroethane, fluoropropane, and even fluorobutane, both in its linear and cyclic forms. In U.S. Pat. No. 5,423,945, Marks et al. disclose an oxide etch selective to nitride using C2F6 in an HDP etch reactor having a thermally controlled silicon surface. Later process work with the IPS chamber of FIG. 2 and other types of plasma reactors has emphasized C4F8 as the principal etchant species. As disclosed by Araki et al. in U.S. Pat. No. 5,770,098, argon (Ar) and carbon monoxide (CO) are often added to achieve the desired selectivity. Wang et al. have disclosed the use of fluoropropanes and fluoropropylenes, e.g., C3F6 and C3H2F6, in U.S. patent application Ser. Nos. 08/964,504 and 09/049,862, filed Nov. 5, 1997 and Mar. 27, 1998 respectively. The two examples of fluorocarbons have F/C ratios of 2, as does C4F8, and some researchers, including Yanagida in U.S. Pat. No. 5,338,399, believe this value produces the best passivating polymer. We have observed, however, that the etching profile cannot be controlled with C3H2F6.
If possible, it is desirable to use the already widely available fluoromethanes, which include carbon tetrafluoride (CF4), trifluoromethane (CHF3), difluoromethane (CH2F2), and monofluoromethane (CH3F). Hung et al. in U.S. patent application Ser. No. 08/956,641, filed Oct. 23, 1997, suggest the use of CHF3 and CH2F2. We have observed that this last combination is insufficiently selective, indicating poor polymer formation.
Although octafluorocyclobutane (C4F8) remains the most popular oxide etching gas, we observe that it suffers from too narrow a process window. Furthermore, although C4F8 is known to provide selectivity at the bottom of the etching hole, it provides little sidewall passivation, which is required for the desired vertical profiles. Also, C4F8 has a boiling point of 4 to 6� C., which is considered somewhat high for use as a gaseous etchant, especially in view of a trend to operate with very cold cathodes. Often carbon monoxide (CO) is added to C4F8 to increase the sidewall passivation as well as increase general nitride selectivity. However, CO is not only toxic, it also forms carbonyls with nickel and iron in gas cylinders and supply lines. The carbonyls are believed to contaminate wafers. For these reasons, the use of CO is preferably avoided.
The two approaches using alternatively the fluoromethanes and hexafluoropropane (C3H2F6) both provide wider process windows with satisfactory etching characteristics, but we still believe that the process windows are too narrow and the etching characteristics can be further improved.
Hexafluoropropylene (C3F6) has also been investigated by Wang et al. in the previously cited patents. It has the F/C ratio desired by Yanagida in the previously cited patent. However, the results show insufficient selectivity. Yanagida also reports that the use of hexafluorocyclobutene (c-C4F6) produces good anisotropy and resist and silicon selectivities of 4 and 12 respectively. However, this isomer is highly toxic.
A theoretically promising etching gas is tetrafluoroethylene (C2F4). However, it is considered dangerously explosive.
Fukuta has disclosed an oxide etching process using hexafluoro-1,3-butadiene (C4F6) in Laid-Open Japanese Published Application (Kokai) 9-191002. However, he uses a magnetically enhanced capacitively coupled etch chamber. His structure requires selectivity only at the bottom of a contact hole, and he does not address the high selectivity required for contact holes in advanced processes like SAC. The capacitively coupled reactor does not allow the decoupling of the source and bias power. Kadomura in U.S. Pat. No. 5,366,590 discloses a SAC etching process using within a high-density plasma reactor hydrogen-free fluorocarbons with a C/F ratio approaching one. Among his preferred chemicals are hexafluorobutadiene, hexafluorocyclobutene, and hexafluorobenzene (C6F6). All his examples exclude the use of argon carrier gas, and the bias powers are relatively modest.
There are further considerations in selecting fluorocarbons for oxide etching. If a higher-order fluorocarbon is selected, a presently available commercial supply is greatly desired, even if a semiconductor grade needs to be developed. Furthermore, many of the higher-order fluorocarbons are liquids at near to room temperature. It is still possible to use liquid precursors by the use of bubblers to atomize the liquid in a carrier gas. However, bubblers present another expense, they need frequent maintenance, and the effective flow rate of the liquid precursor is difficult to tightly control. Gaseous precursors are much more preferred.
For these reasons, other fluorocarbon and hydrofluorocarbon etching gases are desired. Processing conditions need to be obtained for these other etching gases which produce high selectivity to nitride with a wide process window.
One aspect of the invention includes an oxide etching process using the unsaturated higher-order fluorocarbon such as hexafluorobutadiene (C4F6) and its isomers. A chemically inert diluent gas such as one of the noble gases, for example, argon (Ar). A wide process window is achieved when a large amount of the diluent gas is used, when the pressure is kept below about 20 milliTorr, and when the bias power nearly equals the source power.
The etch process can be performed in a plasma reactor utilizing a high-density plasma, such as an inductively coupled reactor, or in one using a lower-density plasma, such as a capacitively coupled reactor.
High selectivity to nitride, particularly nitride facets, may be achieved in a number of ways. A silicon-based solid material may be advantageously heated to about 225� C. to scavenge fluorine from the plasma to thereby improve the quality of the polymer. The power levels may be reduced as etch approaches the bottom of the hole being etched. A more heavily polymerizing gas may be added, such as a hydrofluoromethane, preferably difluoromethane (CH2F2). Preferably also the more heavily polymerizing gas is added only near the conclusion of the hole etch.
The invention may be extended to hexafluorocyclobutene (c-C4F6) and hexafluorobenzene (C6F6).
We believe that higher-order (heavy) fluorocarbons, specifically those having three carbons or more, and those having a F/C ratio of one or preferably greater but less than two will produce a polymer providing satisfactory etching characteristics with a wide process window. A chart of the F/C ratios for a number of fluorocarbons and hydrofluorocarbons is presented in FIG. 3. The fluorocarbons of more than four carbons are generally considered to be unnecessarily complex, especially since they tend to break up in a high-density plasma. However, hexafluorobenzene (C6F6) has promising physical characteristics which may overcome its size complexity. It is believed that those hydrofluorocarbons having a high hydrogen content, such as monofluoromethane (CH3F) are too heavily polymerizing to serve as the primary etchant gas in deep oxide hole etching. Also, the high hydrogen content will reduce nitride selectivity and degrade the taper profile.
A high-density plasma tends to dissociate gas molecules into radicals. A longer carbon chain provides a larger variety of activated particles, including the CF2* radical usually believed to be responsible for the formation of the fluorocarbon polymer chain. The longer carbon precursor atoms provide a larger variety of particles, which may be helpful in cross linking the polymer and the distribution of which may be controlled by different power levels in the HDP reactor. It is known that a low-fluorine polymer provides better selectivity probably because of increased cross linking resulting in a tougher, more protective polymer. Although an F/C ratio of two corresponds to a single segment of a fluorocarbon chain, it does not account for polymeric cross linking. Silicon-based fluorine scavenging is an attempt at reducing the fluorine content by scavenging any free radicals in the plasma. The longer carbon molecules with F/C ratios of less than two provide another mechanism for reducing the fluorine content of the polymer.
Optical emission spectroscopy was used in the IPS chamber to measure the ratio of the C2 and F emissions for CF4, C4F6, C4F8, and C2F6 used as the only fluorocarbon in a baseline recipe given in TABLE 1. The C2/F emission ratio is plotted in
A number of the fluorocarbons and hydrofluorocarbons were preliminarily tested using the baseline recipe of TABLE 1 in the IPS reactor. The flows and power levels in the various recipes should be normalized to a 23 liter vacuum chamber and a 200 mm wafer having an area of 314 cm2.
The fluorocarbon and hydrofluorocarbon etching gases combined with a sizable component of argon were applied to horizontally unpatterned wafers and the blanket oxide-to-nitride selectivities were measured. The selectivities as a function of F/C ratio are plotted in the graph of FIG. 4. These results clearly show an increased blanket selectivity to nitride for lower values of the F/C ratio.
The fluoropropane gas C3H2F6 chosen by Wang et al. in the above cited patents is shown to have insufficient nitride selectivity despite its relatively low F/C ratio, but still higher than is now thought required. The currently dominant C4F8 has relatively good nitride selectivity, but even more is desired.
Of the gases tested, the one manifesting the best blanket nitride selectivity is hexafluorobutadiene (C4F6), alternatively called perfluorobutadiene. The isomer hexafluoro-1,3-butadiene has a chemical structure illustrated in
One of the chemical advantages of C4F6 is that it is free of hydrogen. Similarly, hexafluorobenzene (C6F6) has a low F/C ratio and is hydrogen-free. It is a fully substituted cyclic or aromatic organic molecule having a chemical structure illustrated in
Extensive experimental data were obtained for the use of hexafluorobutadiene (C4F6) as the primary etching gas.
Further tests of the blanket etch nitride selectivity were performed using alternatively C4F6 and C4F8. The etch recipe generally followed that of TABLE 1, but the flow of the fluorocarbon was set to 14 sccm, and the argon flow was varied between the experiments. For C4F6 as the fluorocarbon, as the argon flow increases from 30 sccm to 500 sccm, the oxide etch rate decreases while the nitride etch rate is smallest at 30 sccm and 500 sccm. The nitride selectivity as a function of argon flow for the two gases is shown in the graph of FIG. 10. These results show that, for these processing parameters, C4F6 offers better blanket selectivity to nitride than C4F8, and that the best nitride selectivity is obtained for a C4F6 flow of 50 sccm and below. However, selectivity itself is insufficient since etch stop is likely to occur if the selectivity is achieved by excessive polymer deposition. As will be shown below, a minimum argon flow is dictated by the on set of etch stop. In contrast to the blanket selectivity for C4F6, the nitride selectivity for C4F8 trends in the opposite direction, indicating a different chemical regime.
A first etch recipe is listed in TABLE 2.
Two SAC structures, generally as illustrated in
The first recipe produces an oxide etch rate of about 600 nm/min. The profile varies over the wafer with angular values of about 87�. However, the selectivity is about 20:1 at the corner, and severe faceting is observed at the nitride corner.
No etch stop is observed with this recipe or with most of the other reported recipes. Unless etch stop is specifically reported hereafter for a particular recipe, it is not observed.
A series of experiments were performed to provide a matrix of results for variations in both the flow of C4F6 and the chamber pressure. The experiments were performed on a SAC structure having a via opening of 0.45 μm, a total oxide thickness of 0.92 μm, and a thickness for the nitride-covered gate structure of 0.38 μm. The etching was performed in an IPS reactor using the parameters in the recipe of TABLE 3 except that the C4F6 flow was tested at both 10 and 20 sccm and the chamber pressure at both 4 and 15 milliTorr.
Under somewhat different conditions, the C4F6 flow was tested at 20, 25, and 30 sccm. An increased C4F6 flow improves the nitride corner selectivity. However, 25 sccm of C4F6 is the maximum flow without etch stop occurring somewhere on the wafer.
Based on these results, the first baseline recipe of TABLE 2 was established using a C4F6 flow of 20 sccm and a chamber pressure of 4 milliTorr.
The first baseline recipe was then varied to establish the effects of the argon flow. The most important etch stop results are summarized in TABLE 4. An argon flow of 50 sccm slightly improves the nitride corner selectivity over that at 100 sccm. A further decrease to 25 sccm of argon still does not produce etch stop. However, at 10 sccm of argon, etch stop is observed in a narrow hole one the side of one of the gate structures. Further decreasing the argon flow to zero produces severe etch stop at the level of the top of the gate structure for a lower width of 0.26 μm or at a level even higher than the top of the gate structure.
A series of etch stop tests were performed with an argon flow of 25 sccm and varied values of the C4F6 flow. As mentioned before, at 20 sccm of C4F6 and 25 sccm of Ar, no etch stop is observed. At 25 sccm of C4F6, etch stop begins to appear with a thin polymer layer at the bottom of the hole. At 30 sccm of C4F6, etch stop is complete. On the other hand, when the C4F6 flow is reduced to 15 sccm, there is severe nitride loss.
Based on these results, we believe that the argon flow must be greater than that of the C4F6, more preferably twice as much, and most preferably four times as much to guarantee against etch stop in narrow, deep vias. However, the process window as measured by C4F6 flow is larger for larger Ar flow, at least larger than 15 sccm. The process window as determined by the Ar flow, a much wider window is obtained at 100 sccm of Ar than at 25 sccm. As previously described, the window at 100 sccm of Ar extends from at least from at least 16 sccm to 22 sccm of C4F6 flow and possibly even 25 sccm.
The effect of variations in the silicon ring temperature in the optimized recipe was then evaluated. Specifically, the ring temperature was alternatively set at 245, 270, and 350� C. The higher ring temperature slightly reduces the etch rate. The nitride corner selectivity increases with temperature.
A two-substep recipe was developed in which, as illustrated in the process flow diagram of
Vertical profiles in the oxide are at least 88� over the entire wafer. Nitride corner faceting is observed but at an acceptable level. No etch stop is observed even in the narrow gate gap. The recipe shows adequate uniformity even with no inner source power.
A C4F6 process window was established for the recipe of TABLE 5 by varying the C4F6 flow to 16, 18, and 22 sccm. There is no significant change for faceting or vertical profile at any of these flows compared to the results at 20 sccm, and no etch stop is observed.
In order to increase the nitride selectivity for the C4F6 recipe and to decrease the nitride faceting, a more heavily polymerizing fluorocarbon gas may be included in the etching mixture as an additive to the C4F6. Generally, as explained with reference to
The addition of CH2F2 has two effects. It increases nitride selectivity but produces a more tapered profile, but its addition to C4F6 can be optimized to produce good selectivity and essentially vertical profiles. In contrast, a larger amount of CH2F2 needs to added to C4F8 to produce the same nitride selectivity, at which point the etching profile is substantially degraded.
Tests were performed to compare the addition of difluoromethane to that of tetrafluoroethane (C2H2F4). The tests were performed with the first baseline recipe of TABLE 3 but with a chamber pressure of 4 milliTorr and with or without the addition of 15 sccm of either CH2F2 or C2H2F4. The addition of CH2F2 improves the nitride corner selectivity and does not produce etch stop. The addition of C2H2F4 causes some tapering as the profile angle decreases from 88� to 86� and produces etch stop at some locations on the wafer.
To combine the best features of both etch recipes, a two-step oxide etch recipe has been developed. As illustrated in the process flow diagram of
A first embodiment of the two-step etch recipe including an additive gas is summarized in TABLE 7.
This recipe was applied to the second, tall SAC structure. The profile angle in the oxide portion of the hole is observed to be at least 87�, and the nitride selectivity is acceptable.
The timing of the switch between the main etch and the over etch is chosen such that the main etch reaches the nitride bottom at most of the locations on the wafers and the over etch guarantees a complete etch without producing excessive nitride faceting. To provide further nitride protection, the changeover can be moved to a point where the main etch has passed the top of the nitride at most locations, that is, is somewhere in the gap between the gate structures. The changeover can be controlled dynamically by relying on optical emission spectroscopy or equivalent means tuned to an emission of a nitride byproduct. Thereby, the polymerizing gas is added as soon as the main etch has reached the top nitride at a significant number of locations.
A number of experiments were then performed to determine the process window and the fact that it is relatively wide. In a first pair of experiments, a one-step C4F6/CH2F2 etch was performed on the shallow SAC structure having a 0.35 μm trench aperture following alternatively the two variation recipes listed in TABLE 8.
These two recipes vary the flow of C4F6 by 15% about its baseline value of 20 sccm. The other parameters are somewhat different from the baseline values for the third recipe of TABLE 6, but are close enough to establish a window for the C4F6 in the critical over etch. Nitride corner etching is barely observable. The minimum profile angle varies between 3� and 4� between the two recipes, which is better than the 84� of the second etch recipe of TABLE 1. Inward tapering occurs at the bottom of the etch. Similar results are observed with 0.4 μm trenches.
This �15% window for C4F6 flow is to be compared with the window for an optimized C4F8 recipe of 15 sccm of C4F6 and 28 sccm of CH2F2 with other parameters similar to those for a C4F6 etch. A 20% reduction of the C4F8 flow to 12 sccm produces severe nitride faceting to the extent of punch through at some locations. A 20% increase to 18 sccm produces very good nitride corner selectivity but increases tapering to the extent that some oxide is not etched at the side of the gate structure.
Although only the flow of the main fluorocarbon gas was varied in these window tests, the various components of a recipe are interrelated so that significant windows should exist for variations of the other recipe components.
The baseline two-step recipe of TABLE 7 was varied to decrease the silicon ring temperature to 255� C. in both the main etch and the over etch. For both the shallow and tall SAC structures, the lower ring temperature increases the profile angle to at least 88� and eliminates sidewall oxide that tends to form on the walls of the nitride at the bottom of the trench. Nitride corner selectivity decreases somewhat, but it is still acceptable.
In two further experiments, the over etch recipe was modified to include 20 sccm of C4F6 and 5 sccm of CH2F2. A satisfactory etch is obtained at silicon temperatures of 300� C. for the ring and 230� C. for the roof. However, if the ring temperature is reduced to 245� C. and the roof temperature to 220� C. with the same flow of CH2F2, the nitride corner is severely faceted. If the CH2F2 flow is then increased to 20 sccm at the lower silicon temperatures, corner selectivity is returned. Thus, silicon scavenging by the hot silicon parts can be traded off against the polymerization produced by the CH2F2. Third and fourth variant recipes for the over etch are listed in TABLE 9.
Both variant recipes applied to a one-step etch of the shallow SAC structure show a satisfactory etch. Nitride corner etching is not readily observable, and the profile angle is at least 86�, which is acceptable for the over etch.
Two sets of experiments were performed to determine the sensitivity to pressure variations. In the first set, a main etch recipe with no CH2F2 was used to etch the entire oxide layer, both in a shallow and in a tall SAC structure. The pressure was alternatively set at 10, 15, and 20 milliTorr. The minimum profile angles decreases from 88� at 10 milliTorr, to 87� at 15 milliTorr, and to 86� at 20 milliTorr, all considered to be acceptable values. The previously described lower sidewall tapering is observed at all pressures. Without the polymerizing CH2F2, significant but not severe nitride corner faceting is observed, particularly at the lower pressure, and a 100 s etch tends to punch through the bottom nitride layer. However, the over etch recipe is intended to circumvent the poor nitride selectivity of the main etch recipe. Thus, over the pressure range of 10 to 20 milliTorr, the main etch performs satisfactorily.
In a second set of experiments, an over etch recipe was used to etch a short SAC structure and the pressure was alternately set to 4.5 and 7 milliTorr. No nitride corner etching is readily observable at either pressure.
In the integrated etching process of
Although the main etching steps described above do not use any polymerizing fluoromethane, it is understood that nearly the same effect can be achieved by flowing in the main etch no more than 20% of the fluoromethane used in the over etch.
The examples reported above were obtained on the inductively coupled IPS reactor capable of producing a high-density plasma. Other inductively coupled plasma etch reactors are available with a variety of coil configurations. The current inductively coupled HDP reactors have the advantage of decoupling the source power from the bias power, thus allowing a reasonable etching rate with low ion energies. There are other ways of decoupling the source and bias power, for example, with a remote plasma source (RPS) or with an electron-cyclotron resonance (ECR) reactor. Many of the features of the invention find applicability with capacitively coupled plasma reactors, especially those that are magnetically enhanced to increase plasma densities.
The results above have been obtained on an HDP reactor having separately controlled source and bias powers. At least some aspects of the invention are also applicable to more conventional capacitively coupled plasma reactors usually operating with a plasma not qualifying as high-density. An example of such a reactor is a magnetically enhanced reactive ion etcher (MERIE), such as the MxP+, available from Applied Materials and illustrated schematically in the cross-sectional view of FIG. 12. It includes a grounded vacuum chamber 90, perhaps including liners to protect the walls. The wafer 30 is inserted into the chamber 90 through a slit valve opening 92 and placed on a cathode pedestal 94 with an electrostatic chuck 96 selectively clamping the wafer. The chuck powering is not illustrated. An RF power supply 98, preferably operating at 13.56 MHz, is connected to the cathode pedestal 94 and provides the only significant generation of the plasma. Magnetic coils 100 powered by unillustrated current supplies surround the chamber 90 and generate a rotating, horizontal magnetic field in order to increase the density of the plasma. A vacuum pump system 102 pumps the chamber 90 through an adjustable throttle valve 104. Shields 106, 108 not only protect the chamber 90 and pedestal 94 but also define a baffle 110 and a pumping channel 112 connected to the throttle valve 104.
Processing gases are supplied from gas sources 116, 118 through respective mass flow controllers 120, 122 to a quartz gas distribution plate 124 positioned in the roof of the chamber 90 overlying the wafer 30 across a processing region 126. The distribution plate 124 includes a manifold 128 receiving the processing gas and communicating with the processing region 126 through a showerhead having a large number of distributed apertures 130 so as to inject a more uniform flow of processing gas into the processing region 126.
Initial process experiments were performed using hexafluorobutadiene in the capacitively coupled MxP reactor. It is believed that even with the magnetic enhancement the MxP reactor is not capable of producing a high density plasma. That is, the results presented here utilize a low-density plasma having ionization densities lower than 1011 cm−3.
Because C4F8 processes when applied to advanced applications like SAC have generally needed substantial CO to achieve the required nitride recipe, such a CO-rich recipe, as summarized in TABLE 10 was tested on a SAC structure having 100 nm of TEOS oxide, acting as an anti-reflection coating (ARC), overlying 800 nm of borophosphosilicate glass (BPSG), which is a form of silica. A 100 nm silicon nitride coating conformally coated the gate structure and the bottom of the via to be etched. Via holes were masked to a diameter of 0.4 μm.
The first step is used to open the TEOS ARC layer. The second step is the final etch and must provide adequate selectivity to nitride without etch stop. The results show a fairly low etch rate of 360 nm/min, but the nitride corner loss is only 10 to 20 nm with about a 50% overetch. The profile angle is 87� or better. No etch stop is observed even in a 9 nm wide gap between the two nitride-covered gate structures. These superior results are obtained without attempting to optimize the process. Even though the recipe is rich in carbon monoxide, the CO flow is less than 50% of the total gas flow and is no more than the Ar flow.
In view of the problems associated with CO, a series of experiments were performed using only C4F6 and Ar on test wafers covered with a uniform layer of BPSG, over covered with the TEOS ARC layer and masked for 0.4 μm via holes. The tests were performed to study the dependence of etch rate, profile angle, and etch stop on the gas flows and pressure. The other process conditions for the main etch were those of TABLE 10. The other conditions are listed for four experiments in TABLE 11.
The first two experiments were performed at a relatively high pressure of 85 milliTorr and with 4 sccm of C4F6. At the higher argon flow of 295 sccm, the profile angle is 87�, while at 150 sccm of Ar, it is about 85�. The second two experiments were performed at a somewhat lower pressure of 50 milliTorr and with 7 sccm of C4F6. At the higher argon flow of 150 sccm, the profile angle is 85�, while at 80 sccm of argon, it is about 83�. In no case is etch stop observed after etching through about 1.1 μm of BPSG. The conclusion is that a relatively high flow of argon, especially relative to the flow of C4F6, produces a more vertical profile. The results also show a better profile at higher pressure.
Some further tests show that a high flow of C4F6 and no argon produces etch stop. Even 10 sccm of C4F6 and 150 sccm of Ar at 50 milliTorr produces etch stop. Carbon monoxide seems incapable of preventing etch stop in the absence of argon, as shown by the following tests. A main etch step was performed with 4 sccm of C4F6, 295 sccm of CO and either 295 sccm of Ar or no Ar. Without argon, etch stop is observed about half-way down a 0.4 μm via hole. With argon, etching continues with profile angles of about 85�. Hence, it appears that the Ar flow should be at least 20 times that of C4F6 to prevent etch stop. The higher argon flow also improves uniformity.
A CO-free recipe was then tested on a SAC structure generally using the two-step recipe of TABLE 10 but using for the main etch 7 sccm of C4F6 and 150 sccm of Ar at 50 milliTorr but neither CO nor O2. The etch rate is 320 nm/min and the taper profile is less than 85�. The corner nitride selectivity is unsatisfactory exposing the gate metal, but the bottom nitride selectivity is good. No etch stop is observed even when the gap between the nitride-covered gate structures is 4 nm. With further optimization, we believe that a satisfactory CO-free process can be developed for the MxP. The nitride corner selectivity can be improved by including a more polymerizing gas, for example a hydrofluorocarbon such as CH2F2. Problems with etch stop that the additional polymerization may introduce can be counteracted by the use of N2 or O2. If CO is used to enhance selectivity with C4F6 and Ar, the CO flow fraction may be less with C4F6, even substantially less than 50%.
Although effective pressure ranges have not been investigated, it is believed that effective processes in a low-density plasma can be established in the range of 20 to 150 milliTorr. Bias power, which should be normalized to a 200 mm wafer, primarily affects the oxide etch rate in the preferred high power range. Between 1000 W and 1500 W, increased power does not increase the oxide etch rate and decreases nitride selectivity. Between 1500 W and 1800 W, the oxide etch rate increases with little change in nitride selectivity.
In one aspect of the invention, the etching gas of the invention can be characterized as consisting essentially of a fluorocarbon gas and a chemically inactive gas. The fluorocarbon gas consists of a principal fraction of hexafluorobutadiene or related gases and may additionally include other hydrogen-free fluorocarbon or hydrofluorocarbon gases. To achieve selectivity without etch stop in narrow holes, the amount of the chemically inactive gas should be greater than that of the fluorocarbon gas in a high-density plasma and should be greater than 20 times that of the fluorocarbon gas in a low-density plasma. Little or no CO or nitrogen is required. It is of course appreciated if an amount of CO is added that is less than half that of C4F6, especially in an HDP process, and less than half the total flow in a capacitively coupled process. The chemistry differs from that disclosed by Araki et al., which relies upon a substantial fraction of CO and a lesser amount of Ar for selectivity.
Although argon is the usual chemically inactive carrier gas, other gases can be substituted, such as the other rare gases, such as neon, krypton, and xenon. Hung et al. in the patent application Ser. No. 09/276,36, filed Mar. 25, 1999, incorporated herein by reference in its entirety, disclose unexpectedly good oxide etching results using xenon as the inactive diluent gas, particularly in combination with C4F6.
Although the description above concentrated on selectivity to nitride, the mechanisms involved in selective oxide etching depend principally as far as materials are concerned upon whether the layer contains a significant amount of oxygen or not. Therefore, the same chemistry is applicable to etching oxide over a non-oxide layer or feature. Silicon is one such material, as is found for contact etches.
Although the above results were derived from experiments performed on SAC structures, there are other structures in which high nitride corner selectivity is required. A pair of examples include structures in which a nitride layer is used as a mask. A first example is a silicon nitride hard mask placed between the photoresist and the oxide layer. A first etching step etches the photoresist pattern into the hard mask. Thereafter, a second etching step etches the oxide layer according to the pattern of the hard mask. In the second step, photoresist selectivity is not required, but the nitride corner of the hard mask is exposed throughout most of the second step so that high nitride corner selectivity is required. A second example is a self-aligned local interconnect (SALI), as Wang et al. describe in U.S. patent application Ser. No. 08/964,504, filed Nov. 5, 1998. In the SALI structure the nitride covered gate structure may be completely exposed, and further a planar bottom nitride is exposed for a long period. A third example is a dual-damascene structure, as Tang et al. describe in U.S. patent application Ser. No. 09/112,864, filed Jul. 9, 1998. In this structure, a nitride layer separates two levels of oxide. Because nitride acts as a stop layer, one etching step, sometimes in combination by an initial etch, can etch the lower oxide layer into one feature and concurrently etch the upper oxide layer into a connected, larger feature. The patterned nitride layer operates either as a stop layer or as an intermediate mask. The intermediate nitride layer is substantially planar but has a corner surrounding an aperture opening into the lower dielectric layer so that high nitride selectivity is required.
The oxide etching process of the invention thus provides superior etching characteristics with the use of gases which are relatively novel to semiconductor processing but which are commercially available. The other process parameters are achievable in commercially available plasma reactors.
Patent Citations
Referenced by
Legal Events
Original Image


text:
We're sorry, we need more information to run your search. Please enter a last name (adding more details will improve your results).
Still trying to get information about Kimberley Jones? If so you are exactly where you need to be. Access the latest info about Kimberley Jones such as DOB, known aliases, and age right here on PeopleFinders.com. You will also find that with our vast database of public records information and exclusive DataTsunami™ logic, we can collect details about anyone very easily.
To help you identify the right Kimberley Jones, we include snippets of information that we have available. This data contains details like relatives, previous residences, and known aliases to help our users pinpoint the precise Kimberley they are looking for. We have also provided you a list of people with the last name Jones above if the Kimberley on this page is not the Kimberley you are looking for.
You can also better your search query by adding additional text into the search fields above. By reporting more information—first name, middle name, last name, city, state and/or age—we can return more productive results for your search of Kimberley Jones. And once you have pinpointed the Kimberley Jones you are looking for, you can take your time and surf all of the public records data for Kimberley that we have available.

subset: commoncrawl


text:
1/17/2013 (2 years ago)
Catholic Online (www.catholic.org)
Throughout the West, Christians, Orthodox, Protestant and Catholic, are now enrolled in a school of ecumenism as we make common cause to end the killing of our youngest neighbors. We have been thrown together in a common defense of life in a western culture which has lost its moral compass. Our Marching together for Life is becoming a road to our unity and a sign of our growing communion.
Catholic Online (www.catholic.org)
1/17/2013 (2 years ago)
Published in U.S.
Keywords: Pro-Life, 40 years, Roe v Wade, Doe v Bolton, March, March for Life, Pope Benedict XVI, Blessed john Paul II, Ut Unum Sint, unity, week of Christian unity, Deacon Keith Fournier
CHESAPEAKE, Va. (Catholic Online) - After his Wednesday catechesis Pope Benedict XVI noted that Friday, the 18th of January begins the Week of Prayer for Christian Unity. This year, the theme of the week is "What does God require of us?" inspired by a passage from the prophet Micah.
The Pope invited all "to pray, asking insistently of God, for the great gift of unity between all of the Lord's disciples. May the Holy Spirit's limitless strength arouse us to the sincere commitment to seek unity, so that we might all profess together that Jesus is the savior of the world."
On January 25, 2013, hundreds of thousands will gather in Washington, D.C. to give their voice to our neighbors in the first home of the whole human race. These are the children who await their welcome among us upon birth. These littlest neighbors need our voice because theirs is being muffled behind the wall of their mother's womb, once considered the first refuge of safety.
There, in their first experience of the interdependency which reveals the truth about our humanity, where they are supposed to be embraced by the warmth of love, they are vulnerable to the worst kind of domestic violence. At any moment the weapons of the first pre-emptive war, voluntary abortion, may be wielded against them for any reason.
Make no mistake; these are weapons of death and destruction - chemical, surgical or suction - being used to kill these children deliberately for any or no reason. The cold, hard truth about every procured abortion is that it takes an innocent human life.
No one with integrity any longer argues that the little girl or little boy killed through procured abortion is not a human being. When the abortion occurs through miscarriage we properly enter into the mourning of the mother over the loss of the one we call "her baby". However, when the mother is deceived into a voluntary abortion, we use a different vocabulary.
Most people now acknowledge that these children killed by abortion are human persons. A few hold on to the dangerous notion that dependency upon others makes someone less of a person. However, medical science has confirmed what our consciences and the Natural Law told us all along, these victims of the first preemptive war called intentional abortion are human beings just like us.
We frame "baby's first pictures" in their 3D or 4D image through sonogram technology. We use intrauterine surgery to intervene to save them or correct anything which they may need before they are born. We prosecute an offender who, in the evil act of harming their mother, causes their death as well. It is all so very clear what we are really doing in every procured abortion.
The argument now used in a futile attempt to somehow justify this preemptive war on little girls and boys is that the choice to kill them should be left to the mother in consultation with her own Doctor and/or other counselors. This profane argument is couched in a language of freedom and clothed with a counterfeit compassion. What other group of human persons can be killed because someone else determines they do not want them to live?
There is no moral difference between the killing of a child after birth and the killing of a child before birth.
We now legally excuse fetal homicide when it is committed by a misguided mother through the agency of a deceived or corrupted Doctor who once pledged to "do no harm" in his or her professional oath. We now routinely refer to this intentional taking of innocent human life as healthcare. We try to claim that the decision to take their life is somehow a "reproductive" choice.
Procured abortion is not health care, it is an execution. And, there is absolutely NOTHING reproductive about taking the life of that little boy or girl.
There is a horrid irony in the fact that this 40th Anniversary March for Life will take place only days after President Barack Obama is sworn in for his second term. He will take the oath of office placing his hand on two bibles, one owned by Abraham Lincoln, the other owned by Martin Luther King Jr.
Both of those American heroes stood against the evil idea that some human persons are less worthy of being welcomed within our National family than others. With President Obama's election, our Nation celebrated a great advance against another intrinsic evil, racism, and the horrid memory of its once institutionalized expression, slavery.
Yet, sadly, President Obama has been blinded by the culture of death. He is advancing another form of slavery with his refusal to defend the Right to life of our youngest neighbors in the womb.The Right to life Movement is a solidarity movement. These little children our brothers and sisters and we are indeed their keepers.
Evil ideas have a horrid way of repackaging themselves. This President is the most anti-Life President in our modern history. He regularly claims to hear the cry of the poor, yet he fails to hear the cries of those whom Blessed Teresa of Calcutta properly called the "poorest of the poor", our first neighbors in the womb.
It is noteworthy that in the 40 years since the evil Supreme Court decisions in Roe and Doe were issued some unexpected good has come to Christians involved in this great human rights struggle. In our insistence that the positive law recognize what the Natural Law demands, that these children have a right to life, Christians separated from one another by divisions in the Body of Christ have now found one another. I have long referred to this fact as the silver lining in the dark cloud of the culture of death.
That is why I believe it is no accident that the March for Life always falls within the National Week of Prayer for Christian Unity. Our human rights struggle has been the most fruitful and authentic form of ecumenism the world has ever witnessed; what I call trench ecumenism. We found one another in our common concern for the poorest of the poor.
The Prayer of Jesus echoes in a new missionary age: "I pray not only for them, but also for those who will believe in me through their word, so that they may all be one, as you, Father, are in me and I in you, that they also may be in us, that the world may believe that you sent me. And I have given them the glory you gave me, so that they may be one, as we are one, I in them and you in me, that they may be brought to perfection as one, that the world may know that you sent me, and that you loved them even as you loved me." (John 17:20-23)
There is a reciprocal relationship revealed in those words of the Savior. The world will believe our gospel when we demonstrate our own unity of love with one another. The prayer of the Son of God will be answered; the only question is how soon it will happen. We hasten that day when we choose to pray together and work with one another in this great human rights struggle.
That is the message that the great apostle Paul proclaimed to the Ephesians: "Brothers and sisters: I, a prisoner for the Lord, urge you to live in a manner worthy of the call you have received, with all humility and gentleness, with patience, bearing with one another through love, striving to preserve the unity of the spirit through the bond of peace; one Body and one Spirit, as you were also called to the one hope of your call; one Lord, one faith, one baptism; one God and Father of all, who is over all and through all, and in all." Ephesians 4: 1-6
Paul was the apostle of unity between the early Jewish and Gentile believers who were deeply divided. He knew the corrosive effect of divisions within the Body of Christ. We will march on the day when the Catholic Church, in her liturgy, commemorates his conversion to Jesus Christ.
The God who is One, Father, Son and Holy Spirit, places the impulse toward Christian unity in our hearts. In his Encyclical letter on Christian unity (May They Be One, 1995), Blessed John Paul II underscored the language of communion as the preferred vocabulary between Christians not yet one:
"It happens for example that, in the spirit of the Sermon on the Mount, Christians of one confession no longer consider other Christians as enemies or strangers but see them as brothers and sisters. Again, the very expression 'separated brethren' tends to be replaced today by expressions which more readily evoke the deep communion linked to the baptismal character which the Spirit fosters in spite of historical and canonical divisions. Today we speak of "other Christians", "others who have received Baptism", and "Christians of other Communities"(Par. 42)
The authentic ecumenical mission was at the heart of John Paul's pontificate and is at the heart of Pope Benedict's. I remember that day, April 20, 2005, when the newly elected Pope Benedict XVI gave his first message at the end of a Mass he had concelebrated with the members of the College of Cardinals in the Sistine Chapel. He signaled his mission with these words:
"Nourished and sustained by the Eucharist, Catholics cannot but feel encouraged to strive for the full unity for which Christ expressed so ardent a hope in the Upper Room. The Successor of Peter knows that he must make himself especially responsible for his Divine Master's supreme aspiration. Indeed, he is entrusted with the task of strengthening his brethren (cf. Luke 22: 32).
"With full awareness, therefore, at the beginning of his ministry in the Church of Rome which Peter bathed in his blood, Peter's current Successor takes on as his primary task the duty to work tirelessly to rebuild the full and visible unity of all Christ's followers. This is his ambition, his impelling duty."
The authentic ecumenical mission of restoring the full and visible unity of the Church has been the beating heart of Pope Benedict's years of service in the Chair of St Peter. That is because it reflects Heart of the Lord. To be a faithful Christian should mean to long for our full communion. Blessed John Paul called all of the faithful to carry forward the task of ecumenism with a practical and spiritual urgency in that letter on Christian Unity:
"Relations between Christians are not aimed merely at mutual knowledge, common prayer and dialogue. They presuppose and from now on call for every possible form of practical cooperation at all levels: pastoral, cultural and social, as well as that of witnessing to the Gospel message. Cooperation among all Christians vividly expresses that bond which already unites them, and it sets in clearer relief the features of Christ the Servant."
"This cooperation based on our common faith is not only filled with fraternal communion, but is a manifestation of Christ himself. Moreover, ecumenical cooperation is a true school of ecumenism, a dynamic road to unity. Unity of action leads to the full unity of faith."
"Through such cooperation, all believers in Christ are able to learn easily how they can understand each other better and esteem each other more, and how the road to the unity of Christians may be made smooth. In the eyes of the world, cooperation among Christians becomes a form of common Christian witness and a means of evangelization which benefits all involved."
Throughout the West, Christians, Orthodox, Protestant and Catholic, are now enrolled in a school of ecumenism as we make common cause to end the killing of our youngest neighbors. We have been thrown together in a common defense of life in a western culture which has lost its moral compass. Our Marching together for Life is becoming a road to our unity and a sign of our growing communion.
Come, let us lock arms together again and offer our voice for those who have none. Marching to Restore the Right to Life to Our Youngest Neighbors during the Week of Christian Unity is Prophetic. The Killing will end. The divisions among Christians will be healed.
St. Joseph of Cupertino
St. Francis of Assisi
St. Florian
St. Clare
St. Christopher
St. Jude
St. Barbara
St. George
St. Isidore the Farmer
St. Brigid of Ireland
St. Benedict
St. Ann
St. John the Baptist
St. Mark
St. Matthew
St. Joseph
St. Anthony
St. Gerard
By Hannah Raissa Marfil (NEWS CONSORTIUM)
President Obama granted clemency to 22 prisoners with drug-related charges, according to the announcement of the White House on Tuesday. Eight of them were initially sentenced with life imprisonment and expected to die behind bars, if not for the clemency granted. ... continue reading
By Hannah Raissa Marfil (NEWS CONSORTIUM)
In Whittier, Alaska, nearly everyone lives in a single building. The 14-story Begich Towers is the residence of almost all the 218 members of the town, including the police station, a school, an indoor playground, two convenience stores, a B&B, a laundromat and the ... continue reading
By Hannah Raissa Marfil (NEWS CONSORTIUM)
Christianity is one of the factors that led to the creation of the April 1, according to the most popular theory of the April Fools' Day. This is not a joke: according to the theory of the two calendars, most Christians wanted to celebrate the start of the New Year on ... continue reading
By J. Kenneth Blackwell
Almost seven months after the fateful, fatal encounter between Michael Brown and former Ferguson Police Officer Darren Wilson, Attorney General Eric Holder officially announced a truth he had been holding close for months - that the "Hands Up, Don't Shoot" mantra ... continue reading
By Catholic Online (NEWS CONSORTIUM)
It's an American trait to gas up the car and take a drive - anywhere, and that certainly proved to be true last year. According to the Federal Highway Administration, or FHWA, Americans drove 3.02 trillion miles last year, the second-highest level of vehicle ... continue reading
By Catholic Online (NEWS CONSORTIUM)
The military exercise is both mysterious and just a little bit threatening. The controversial Jade Helm military exercise, scheduled to take part in nine U.S. states this summer will involve soldiers operating "undetected amongst civilian populations." The ... continue reading
By Catholic Online (NEWS CONSORTIUM)
Children without adult guardians, from the southern border that the United States shares with Mexico, continue to stream into the U.S. Homeland Security Secretary Jeh Johnson, speaking to Congress last week, says that these child immigrants number in the ... continue reading
By Keith A Fournier
I was with Rick Santorum at the Awakening Conference in Orlando, Florida. Rick and Karen Santorum are personal friends. Their whole family is a source of inspiration to me. But most especially, that little Princess named Bella Santorum. She is the center, the ... continue reading
By Jennifer Hartline
There is no Christianity without Christ, and no Christ without the cross. There was no need for the cross except for our Redemption, and no need for that except for our sin. To preach Christianity without preaching repentance from sin and taking up your cross is ... continue reading
By Hannah Raissa Marfil (NEWS CONSORTIUM)
Fast food conglomerate McDonald's had released its own fashion and lifestyle line, with the clothes full of Big Mac prints on them. The McFashion debuted on Tuesday in Sweden, in celebration of their most recent campaign, "I'm Lovin' It 24." Profit generated from the ... continue reading


text:
This is your source for the latest information and insider tips to help you plan your visit to Orlando. We have everything you need to know - theme park and attractions updates, special events, dining, what to do and where to go in Orlando, Florida.
For the second year, the top chefs at Walt Disney World Resort trekked out to an Orlando area farm to spread a little culinary magic for charity. Teamed up with Edible Orlando and using locally sources ingredients, the menu featured a variety of tasty delights typical of the dining options Disney's resort guests enjoy every day.
The new hub for live entertainment in Orlando, the Dr. Phillips Center for Performing Arts, has announced a lineup of touring shows for the 2015-16 Broadway in Orlando season. Taking center stage in the Walt Disney Theater will be Rodgers and Hammerstein's "Cinderella" and "The Sound of Music" along with modern favorites like "Dirty Dancing" and "Kinky Boots" among other showstopping performances.
Photo: Rosen Hotels
Planning to bring on spring in Orlando this Easter? No need to hunt for the best places to eat. We've come up with a basket full of tasty delights to enjoy your Easter Sunday in Orlando with the whole family, friends or with your special someone.
Just in time for the St. Patrick's Day, Raglan Road Irish Pub and Restaurant at Downtown Disney is celebrating ten years of dining and dancing featuring delicious creations by James Beard award-winning Chef Kevin Dundon.
Orlando brings on spring as grills fire up and the bands warm up for Bands, Brew & BBQ at SeaWorld Orlando. This annual event brings fabulous food, drink and live concerts to the park every Saturday and Sunday through March. The first weekend Toby Keith and Lynyrd Skynyrd performed, followed by a lineup of top classic rock and country artist.
Are you ready for your escape? Whether it's from the frigid weather or the routine of school and work, we have ten ways to play this spring in Orlando for the family, the adventurous, and everyone in between. Vacation or staycation - we're ready to bring on spring in Orlando!
Nothing brings in spring in Orlando like the start of the Epcot International Flower and Garden Festival. If you're looking to shake off your winter chills then warm up with this ten-week celebration of the great outdoors with colorful blooms, towering topiaries and tasty treats.
Ready to share moments guaranteed to last a lifetime? With so much to see and do, Orlando is the perfect destination for sharing dream vacation stories. Enter our Share the Sun! Share the Fun! Sweepstakes for your chance to experience the ultimate dream vacation to Orlando.
Carnival time is still upon us in Orlando and Universal's Mardi Gras celebration lets guests savor the flavor of the famous New Orleans holiday. From tasting your way through a menu of creole delights to shouting "Throw me somethin' mister" at the top of your lungs, you're sure to get caught up in what Universal calls, "Florida's biggest party."
A whole lot of love was given to Orlando area chefs who were represented in force for the 2015 James Beard Awards semifinalists nominations. Five Orlando chefs were named in the "Best Chefs in the South" category; the most out of any other city in Florida. This prestigious recognition for our culinary talent further demonstrates that among our world-famous theme parks and entertainment, dining in Orlando has also become a main attraction.


text:
Hotline Miami
Katawa Shoujo - Yes, this is FAKE, but it is funny. I repeat, IT IS FAKE! Very well crafted piece of Troll work, though.
PROTIP: Press the ← and → keys to navigate the gallery, 'g' to view the gallery, or 'r' to view a random image.
|◄ Previous
|View Gallery Random Image
|Next ►


text:
Shank Review
November 8, 2010 - With visuals that cross the grittiness of graphic novels with the strong design sense of cartoons like Genndy Tartakovsky's Samurai Jack, Shank makes a hell of a first impression, but occasionally stumbles where it counts most.
EA and Klei Entertainment Bring Bloody Revenge to PC with Shank
October 27, 2010 - Shank tells a classic story of gangland betrayal through a violent, pulp-fiction lens. Gamers play as Shank, getting their hands bloody as they uncover the secrets of Shank's past and the reasons he is hell-bent on revenge. With a deep and intuitive combat system, players unleash a tremendous number of creative combinations as they take down waves of enemies standing in their path. Shank also features a special co-operative campaign, designed to be played with a friend locally, which tells the backstory of the revenge plot. This prequel mission allows players to play as Shank or his partner-in-crime, Falcone, with deadly double-team moves and gameplay that encourages teamwork.
E3 2010: Shank Update
June 16, 2010 - Shank is one of the prettiest downloadable games on the horizon. It was love at first sight when we saw it at the Penny Arcade Expo last year. Today we played through a new level on a moving train and got to try out the shotgun.
God of War Writer Pens Shank
May 12, 2010 - Wherever it pops up, from PAX to GDC, Shank always draws a crowd. It's a familiar 2D side-scrolling action game, but the beautiful graphic novel artwork makes people stop and stare. So we know it has the looks – but what about Shank's story? Up until now, all we've known is that it stars a muscle-bound badass who is out to murder every goon that gets in his way.
EA Publishing DeathSpank, Shank
March 4, 2010 - Today EA Partners, a division of Electronic Arts, announced it has entered into publishing agreements with indie developers Hothead (Penny Arcade Adventures) and Klei (Eets: Chowdown). EA will publish both DeathSpank from Hothead and Shank from Klei.
PAX 09: Editor Wrap-up (Of Smiting)
September 7, 2009 - With the 2009 Penny Arcade Expo now behind us, it's time to grab a beanbag chair, sit back, and reflect on the weekend that was. Tens of thousands of people descended on downtown Seattle, WA, for the show, and the world's largest videogame publishers were out in force, too. Electronic Arts, Ubisoft, Microsoft, Nintendo, Sony, Valve, Blizzard, 2K, THQ and many more crowded onto the display floor of the Washington State Convention Center to show off their upcoming games and give away more T-shirts than a FEMA camp. And IGN was there to document it all.
PAX 09: Shank First Look
September 6, 2009 - The first time I saw the Shank demo running in the back corner of the 2009 Penny Arcade Expo floor, I did a classic double-take. The first thing that jerked my head away from its previous point of focus (the exit, where the food lived) was the game's gorgeous 2D look. But there are a lot of pretty things to look at during PAX, so I catalogued it for future examination and shifted my focus back to the task at hand: leaving the Washington State Convention Center as quickly as possible to find some lunch. After all, spending the morning watching normally sane young men trample their poor cosplaying girlfriends for a free T-shirt can work up a powerful appetite.
Shank: Tarantino-esque Action for XBLA?
May 12, 2009 - Klei Entertainment, developer of Eets: Chowdown, has unveiled its next project, an "over-the-top, Tarantino-esque action adventure game." The platform has not been finalized but Klei says we can probably guess based on its previous games (which have arrived on Xbox Live Arcade and PC). Also, the teaser trailer shows an Xbox 360 control scheme.


text:
"There were multiple color options for customization, it featured a unique design and the invitations were delivered quickly."
"I absolutely LOVED these invitations! I was so impressed with the quality of the paper and image color/clarity. They were so simple but as they say, "less is more!" These were so PERFECT for my baby's Western Themed Birthday Party. This was my first time ordering from Tiny Pints and I will definitely be a returning customer!"
"My son is turning three. This card came out so adorable I can't even tell you. The pictures I used front and back are exactly how I wanted them and it blends perfectly with the card design. I'm super happy and love this beautiful keepsake for his baby book too (yes- I save a birthday invite and holiday card every year). Love this invite!"
"I put my daughter's picture and all of the information in and it looked great on screen! Usually when it looks great on screen it doesn't turn out like that when it prints. I was so shocked at how nice the picture came out and the invitation as a whole. Will definitely order more from here!"
"I LOVED these cards. They go perfect with the party theme. The pictures came out great. I've gotten tons of compliments on them. Very good paper quality as well."


text:
Saga Holiday Home Insurance is designed to give homeowners, aged 50 and over, the peace of mind they need when owning a property abroad.
Our wide-ranging cover includes:
Quote IT601 when talking to one of our UK based advisers.
We can offer buildings and contents cover for your overseas holiday home. For more details about Saga Holiday Home Insurance, please use the links below...
Launching 32 new cruises aboard Saga Sapphire and Saga Pearl II including 14 new ports of call. Plus new for 2016, drinks included with lunch and dinner.
The aim of Saga Respite for Carers Trust is to give carers a break, by providing hundreds of free holidays a year for carers and their companions.
Escape to the country with every modern comfort. We've found a wonderful new way of life!
Get out and about this spring with £10 off English Heritage membership. Enter code SG15W at checkout.


text:
Seedpod producing pedals
Even though I'm way up here in Massachusetts, I've had reasonable luck crossbreeding a number of tropical hibiscus that I keep in the house most of the year. I was recently given an adult plant with an orange double bloom. I pollinated a number of its flowers and ended up with a single developing seed pod. I was very excited as this is my first attempt to cross a double bloom. The seed pod developed as I expected but then something odd happened. When the pod split, instead of seeds inside there were pedals! Has anyone seen anything like this before? I've left the pod and pedals on the plant for the moment to see what happens. I've included a photo below. Any info regarding this would be greatly appreciated. Thanks! :-)
Coincidentally, I have seen the same thing here in the Virgin Islands with an apricot colored double. The first time I saw the bud I let it develop but it got no further than yours. The second time, as soon as I saw the bud I took the pod off the plant, let it dry and recovered two seeds. They are now planted...we'll see.


text:
Wonderful!Oct 24th, 2011 Reply
Wow, the lighting and composition is stunning here! Brilliant photo friend!Jul 1st, 2011 Reply
This is an instant fav, what a beautiful photoJun 27th, 2011 Reply
You have such a talent for grabbing these ray! I'm starting to suspect you are taking a fog machine out there with you ;oJun 27th, 2011 Reply
Great shot, color & moodJun 27th, 2011 Reply
Wow amazing lighting!! Great job on this one!Jun 26th, 2011 Reply


text:
Blogs by Community: Java Enterprise
|• Adopt a JSR
|• Embedded
|• GlassFish
|• Global Education and Learning
|• Identity Management
|• IoT
|• Java Communications
|• Java Desktop
|• Java Enterprise
|• Java Patterns
|• Java Tools
|• Java User Groups
|• Java Web Services and XML
|• JavaFX
|• Jini
|• Mac Java
|• NetBeans
|• Open JDK
|• Portlet
|• Robotics
|• Sun Grid
|• Sun RFID and Sensor
|• [no association]
Open JDK
JavaLand 2015 Wrap Up After months of preparation, it all came down to three days of intense execution, and I was just one speaker. I can only marvel at the logistical acumen that was on display from the JavaLand and DOAG team. I had an action packed agenda: two conference sessions, two Early Adopter's Area (EAA) session, and one training day session. Thrown into the mix were a couple 1:1...
on Mar 30, 2015
Java Enterprise
Now that both JSRs are in full swing I am going to offer you all a bit of a different perspective between the 2 technologies. As I have stated before I view them both complementary to each other! I want to talk a bit about the actual work of doing the JSRs themselves. As part of the JSR we deliver a reference implementation, but in reality does the work stop there? No, it surely does not. For...
on Mar 13, 2015
Case Study: Moving To The Pull Request Workflow & Integrating Quality Engineers On The Team For Better Software Quality
By Christopher W. H. Davis, Continuous Improvement Save 40% on Continuous Improvement with discount code jn15ci at manning.com. The book Continuous Improvement walks the reader through the collection and analysis of data to provide metrics that guide the continuous improvement of agile teams. Each chapter ends in a case study outlining the application of this technique with specific...
on Feb 23, 2015
The MVC JSR is progressing nicely and we have started publishing SNAPSHOT builds. If you want to try them out grab the API JAR from https://maven.java.net/content/repositories/snapshots/javax/mvc/javax.mv... and the Implementation JAR from https://maven.java.net/content/repositories/snapshots/com/oracle/ozark/1... For some samples see the test directory of the Git repo at it://java.net/ozark~...
on Feb 18, 2015
Practical Probabilistic Programming: Open universe situations with unknown number of objects by Avi Pfeffer
By Avi Pfeffer Save 40% on Practical Probabilistic Programming with discount code jn15ppp at manning.com. Imagine you are implementing a highway traffic surveillance system. Your goal is to monitor the flow of vehicles along the highway and predict when traffic jams might occur. You have video cameras placed at strategic points. To accomplish your goal, you will need to do two things. First,...
on Feb 14, 2015
By Debasish Ghosh, Functional and Reactive Domain Modeling Save 40% on Functional and Reactive Domain Modeling with discount code jn15frdm at manning.com. One of the most important aspects of domain model API design is the specification of the API itself. The specification should be concise, clear and easily understandable by the client. While using object oriented techniques we use...
on Jan 26, 2015
If Flipper extends Flapper, Slapper implements Slipper, and Flipper extends Slipper, is Flipper a class or an interface?
By Mala Gupta, OCP Java SE 7 Programmer II Certification Guide Save 40% on OCP Java SE 7 Programmer II Certification Guide with discount code jn15ocp at manning.com. You'll be amazed at how easily you can identify and implement IS-A and HAS-A relationships between classes and objects, if you remember one simple rule—follow the literal meaning of these terms: 1. IS-A—This relationship is...
on Jan 24, 2015
Just like the previous blog entry "JSF 2.3 Using a CDI managed Converter" you can now do the same thing with Validators. So how does that look in code? @FacesValidator(value = "myValidator", managed = true) public class MyValidator implements Validator { @Inject MyModel model; .. } Note in this example...
on Jan 16, 2015
JavaLand 2015 Conference Picks With only 44 business days to go until JavaLand 2015, I'd like to share my conference picks. I'm including my sessions for completeness, and naturally I recommend you attend them, but I'll also include an alternate that I'd attend if I wasn't speaking at that time. Tuesday, 24 March 2015 0900, Wintergarden, Welcome Keynote: 20 Years...
on Jan 16, 2015
Although a converter is considered an attached object (part of the view state) commonly people ask support for CDI injection into a converter. Since we did not want to upset the original contract of what a converter is we had to look at how we can best support the requested use case. We already had an annotation (@FacesConverter) that was being used to define a converter programmatically. To...
on Jan 15, 2015
Validating Oracle Java Cloud Service HA One of my favorite applications from my Sun Java System Application Server days was the Cluster JSP Sample Application. In a cluster configuration fronted by a load balancer, this simple JSP provides a nice summary of which cluster node handled the request as well as the ability to test session failover. Therefore, why not try it on the Oracle Java Cloud...
on Jan 7, 2015
Happy New Year to all! Enjoy!
on Jan 1, 2015
JavaLand Training Day Teaser With only 61 days to go until JavaLand 2015, it's high time for a preview of the Training Day session I am pleased to offer with my friend Oliver Szymanksi. Briefly, this session is a full day treatment of the parts of Java EE 7 that intersect with the world of HTML5 web development. While the session is an update of the successful class we offered at JavaOne San...
on Dec 26, 2014
As we are working towards our first JSF 2.3 milestone release I want to tell everyone once it is out please start testing. With your help we are able to catch so much more before we ship. This is why we are going to be doing milestone releases. So once the first one is out try it out! I hope you all will make testing your JSF application with JSF 2.3 a New Years resolution! Enjoy!
on Dec 24, 2014
Today I participated in a phone call on Adopt-a-JSR for the MVC 1.0 specification. While we do not have a whole lot of things that can be worked upon by a JUG at the moment I do want to point out that once we start publishing SNAPSHOT releases and milestones we will be looking forward to your contributions! I will tweet and blog about that day and hopefully it will be soon, but as I also...
on Dec 19, 2014
The @Resources annotation makes it possible to define resources that you are going to lookup at runtime. The example describes a way to lookup a datasource that is mentioned in the @Resources annotation on the class. @Resources(value={ @Resource(name="ShoppingCartDB", type=javax.sql.DataSource), @Resource(name="ShoppingCartMail", type...
on Dec 18, 2014
Imagine if, for example, the hypervisors that run EC2 were compromised - imagine almost every business you deal with online compromised, all at once. This is the never-talked-about problem with the cloud - over on my timboudreau.com blog.
on Mar 8, 2015
Bunyan is a NodeJS library that rethinks logging in some really useful ways. I wrote a Java port you can use in your applications. In particular, with Bunyan, logs are JSON - and Bunyan comes with a great filtering and analysis tool. The Java port uses some innovative techniques to make logging simple and foolproof - in particular, a use of AutoCloseable to make a logging code simple and...
on Jan 18, 2015
Java Tools
By Konstantinos Kapelonis, Java Testing with Spock Save 40% on Java Testing with Spock with discount code jn15spock at manning.com. In the Java world, there has been so far only one solution for unit tests. The venerable JUnit framework is the obvious choice and has become almost synonymous with unit testing. JUnit has the largest mind share among developers who are entrenched in their...
on Feb 19, 2015
Java User Groups
JavaLand 2015 Early Adopter's Area With only 25 business days to go until JavaLand 2015, now's a good time to share the plans for the Early Adopter's area and Hackergarten. As at many other Java community conferences, this is a space where anyone can visit and meet with leaders of different parts of the Java ecosystem to see first hand what's new in their own little patch of the Java world. The...
on Feb 16, 2015


text:
- Home
- About us
- Contact us
- Our services
- Business services
- Personal services
- Specialist sectors
- News centre
- Guides
- Business
- Personal
- Tax
- Budget 2015
- Minimising capital taxes
- Year end tax guide 2014/15
- Autumn Statement 2014
- Financial planning and strategy guide 2014/15
- Tax efficient investments
- Tax planning for business owners
- Tax rates and allowances
- Offshore issues update
- PAYE and NI
- IR35 Centre
- Tax and business calendar
- Budget archive
- Links
- Calculators
Home > Calculators > Stamp duty land tax
Stamp duty land tax
Stamp duty land tax (SDLT) on residential properties is charged at different rates according to a band system.
Rates are applied only to the portion of the property's value that exceeds the relevant band threshold. This replaces the previous 'slab rate' system under which SDLT was charged against the total property value.
If you exchanged contracts on or before 3 December 2014 but the transaction is completed on or after 4 December, you can choose whether you follow the current or the old rules.
The land and buildings transaction tax replaces stamp duty in Scotland on 1 April 2015. Current SDLT rules will also apply in Scotland until then.


text:
Nickelodeon Launches Nick Jr. App
New preschool app follows network's successful launches of top-ranking, curriculum-driven titles including 'PAW Patrol Rescue Run' and 'Wallykazam! Letter and Word Magic.'
New preschool app follows network's successful launches of top-ranking, curriculum-driven titles including 'PAW Patrol Rescue Run' and 'Wallykazam! Letter and Word Magic.'
The Foundry appoints Montreal-based business development company SDLC worldwide partner for its web-based collaborative tool FLIX.
New partnership is aimed at leveraging Toon Boom Harmony to create new original properties for the North American market.
Massive data breach in November reveals that the studio is developing an animated 'Spider-Man' comedy feature to be directed by 'The LEGO Movie's Phil Lord and Chris Miller.
Digital Domain 3.0 COO Amit Chopra named executive vice president of parent company Digital Domain Holdings Limited.
Network picks up new seasons of the strangely brilliant 'Mike Tyson Mysteries,' along with 'Mr. Pickles' and Aaron McGruder's live-action series 'Black Jesus.'
VFX supervisors Andy Boyd and Jake Montgomery team with executive producer Asher Edwards to open artist-driven creative studio.
Kansas City-based 3D animation/VFX boutique restructures and expands its reach to include projection mapping, digital media and mobile applications.
Film and television production company acquires worldwide rights for the award-winning property, including an animated feature film, television series and an Oculus Rift VR Experience.
Turner's second flagship kids brand returns to the region, complete with new look and first-run content.
With no new wide releases in the U.S. this past weekend, Lionsgate's 'The Hunger Games: Mockingjay -- Part 1' topps the box office for the third time in a row, followed by DreamWorks Animation's 'Penguins of Madagascar' and R-rated comedy 'Horrible Bosses 2.'
Three class-action lawsuits over anti-poaching and wage-fixing deals by Disney, DreamWorks Animation, Sony Pictures Imageworks and other animation studios have been consolidated into a single complaint under the jurisdiction of antitrust federal judge Lucy Koh.
Projects in development include live-action comedy feature at Sony based on toymaker Mattel's popular doll, Barbie.
Former Stardust creative director has completed high-profile spots for brands such as Air Jordan, Samsung and Starbucks.
Alex Pejic, Stephane Nazé, Nigel Denton-Howes and Oscar-winner George Murphy join Framstore's London and Montreal film offices.
New short 'Frozen Fever' to open in theaters in front of live-action 'Cinderella' on March 13, 2015.
Hit animated TV series executive produced by 14-time Emmy Award-winner Tom Ruegger takes a comedic look at the world of the Seven Dwarfs.
When toy companies have hot-selling toys they often decide to turn them into animated series or feature films. Here are some tips on how to do it successfully...
Creative studio continues to grow its feature and episodic television visual effects team with the addition of VFX Supervisor Andrew Sagar.


text:
Temporary Price Drop
Sale Price
$295.02 - $297.00 -
List Price: $447.00 - $450.00
Was: - (Save )
Ends: Today at ET!
You save 34%
Clear Selection
{{{true:'No image available for this option.', false:'Hover an option to enlarge.'}[largeSwatch.src === 0]}}
This option is not available with your selected options.
Kichler Tubes 5968 Vanity - 28 in.Item # HN-KIC3405
- Contemporary style blends in anywhere
- Steel and brass construction in a variety of finishes
- Drum-shaped opal etched glass shade
- Accommodates (4) 60W G9 bulbs (included)
- Overall dimensions: 5.5L x 28W x 4.75H inches
Full Description
Shipping Info
About This Brand
Guarantee & Returns
Recommended Accessories
Similar Bathroom Vanity Lights
Justice Design Group GLA-8703 - Aero 3 Light Bath Bar - Tapered Cylinder Shade - Brushed Nickel with Lace Glass
Z-Lite Elea 2-Light Vanity Light
$238.00 - $278.00
Access Lighting Helium C62043BSCKFEH12245 Vanity
Access Lighting Geneva Wall or Vanity Fixture 31010 - 24.5W in.
Access Lighting Oxygen C62053CHCKFEN1226BS 2-Light Vanity
Access Lighting Helium C62041BSCKFEN1113BQ 1-Light Vanity
Customer Reviews
Earn up to $3 in My Reward points
for reviewing this product when you join My Hayneedle Rewards
Write a review
200 points for each review = $2
300 points for reviews including an image or video = $3 Learn More
for reviewing this product when you join My Hayneedle Rewards
Write a review
200 points for each review = $2
300 points for reviews including an image or video = $3 Learn More
Customer Q & A
Be the first to ask a question about this product.
Enter your question, and one of our Customer Care experts will respond via email and also post the answer here.
Ask a Question
Email Address
Please Enter
Your Valid Email
Your Valid Email
Your Question
Please Enter
Your Question
Your Question
Sponsored Links
Kichler Tubes 5968 Vanity - 28 in.
Modify the decor style of your bathroom, with the Kichler Tubes 5968 Vanity - 28 in. A clean-lined frame, made of steel and brass, offers you good looks and durability. Moreover, an attractive finish on the body enhances its visual appeal. This frame holds a large, tubular diffuser that's made of etched glass. Its four-bulb lamp suffuses your room with a gentle, luminous radiance. With an unadorned, simple profile, this lighting accessory is a fine example of contempora