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Climbing roses
We are planning on turning the balcony at our house into an enclosed balcony with a hot tub. the sides will be made out of lattice. I want to grow climbing roses onto it and I was wondering if there were any suggestions of climbing roses you guys can tell me that can survive zone 5b?
I have had very little experience with climbing roses and would love to hear any tips you guys can give me.
thank you.
I have had good results with Nahema. You can get it at Roses Unlimited. It is hardy in zone 5.
Here is a link that might be useful: Delbard Roses at RU
Ramblin' Red is hardy in my z4 area left on the trellis with no winter protection. Also good disease resistance but has lots of thorns if that is an issue. Below is a good video on training your climbing rose.
Here is a link that might be useful: youtube video
These have all been hardy for me, so far, in 5a.
Parade, an iconic world famous climber from Beorner
Rosarium Uetersen non stop producer of raspberry-salmon pinkish, fully double blooms--I think the color is more salmon in brighter sun than I get in NY, from Kordes
Karlesruhe, a parent of the above, a darker pink, larger flower, not quite as rapid rebloom for me.
Dream Girl, lovely pink climber by Jacobus, available at Greenmantle.
Shin Setsu, white climber from Suzuki, excellent growth and vitality in a cold climate, why this has not remained in commerce I don't know
White Cocade, beautifully shaped soft white flowers..
In general, any of the climbers which have New Dawn for a parent, except possibly Casino and other yellows, are hardy to at least 5. New Dawn itself and sports are armoured and probably not good choices for placement near a hot tub.
Also any of the Kordesii climbers, such as the above mentioned, should work for you. Some newer ones which have amazingly beautiful flowers are Rosanna, Laguna, White Cloud.
Northland Rosarium has a nice selection of hardy climbers and their plants and service are excellent.
No personal experience but ran across this when checking the cold tolerance of some of my climbers.
William Baffin
Canadian Explorer roses were developed in Canada during a 30-year period from the 1960s through the 1990s. Bred to be cold-hardy, some are also drought-tolerant. One variety, "William Baffin" (Rosa "William Baffin"), climbs between 7 and 10 feet and bears semi-double pink flowers. It is hardy in USDA zones 2b through 9b, meaning that it can withstand winter temperatures as low as -45 degrees Fahrenheit and a significant number of days when temperatures are above 86 degrees Fahrenheit, as in south-central Florida's USDA zone 9b and American Horticultural Society Heat Zone 10 climate.
New Dawn
"New Dawn" (Rosa "New Dawn") is a vigorous climbing rose that grows between 15 and 20 feet tall, with a 15 foot spread. It is hardy in USDA zones 4b through 9a and can withstand winter temperatures as low as -25 degrees Fahrenheit. The large flowers are shell pink and are borne in profusion in spring and occasionally thereafter. "New Dawn" was selected as one of Texas A&M University's hardy, sustainable "Earth-Kind" roses after eight years of research and field trials in a variety of Texas locations. The field trial results recognize overall hardiness, as well as pest and disease resistance.


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How many times have you steered your internet browser over to Yelp.com, searching for feedback or positive word of mouth on a local eatery, retail stop or other place of business, only to be stopped dead in your tracks by an especially impassioned (and if you're lucky, awesomely, grammatically incorrect) review that really brings the giggles. One has to imagine that these nuggets of consumer advocacy will do the same amplified through the megaphone of comedy! in Onestar at the UCB. Matt Mira, co-host of the Nerdist podcast, and Reno 911!'s Tom Lennon are your hosts for an evening of Yelp review "dramatic readings" that features a choice lineup including Patton Oswalt, Weird Al Yankovic, Paul F. Tompkins, Chris Hardwick, John Cho and many others. The Yelp page providing source material on Thursday's bill is the Koreatown location of 24 Hour Fitness; get ready for a non-stop treadmill of customer rage. (And maybe a little love?)
Sun., Feb. 20, 9:30 p.m., 2011
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subset: commoncrawl


text:
1 of 1 people found the following review helpful
Good detail without academic esoterica,
Verified Purchase(What is this?)
This review is from: 2000 Years of Christ's Power Volume 1: Part 1 (Paperback)
Would consider this solidly "between Sunday school and seminary". I knew very little about the early church fathers and the early controversies such as Docetism and Arianism. This is very well laid out to give one a high level view with just enough detail. Now can zero in on areas that I would like to pursue in depth. This was the author's stated intention and he accomplished it admirably.
Review Details
(8 customer reviews)
Top Reviewer Ranking: 4,018,198


text:
Real Estate Salesperson
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|By Drew Hendricks
Article Rating:
|March 1, 2014 08:00 AM EST
The introduction of mobile devices rocked the e-Commerce world. Instead of knowing that potential customers would use a laptop or desktop, those running web-based stores had to begin to account for users with devices with screens of all sizes; from smartphones, to tablets, to full-size monitors. In addition, many of these devices lack keyboards or accurate cursor devices. As a result, many started creating second sites made for mobile devices. However, new techniques have supplanted this strategy, the most popular of which is responsive design.
One Size Truly Fits All
Responsive Design Expanded
Responsive design is changing. In the past, it was viewed as a layout strategy; today, it is also viewed as a means of attracting a larger base of users. Using responsive design, it's now possible to send translated core content to different users, which makes targeting a wide audience simpler than ever before. It's also possible to update pricing information easily, which makes customers more likely to make a purchase. Those using mobile devices tend to have short attention spans, and these advanced techniques can lead to far better E-Commerce results.
Content Marketing Matters
While many were dealing with the influx of new types of devices, they failed to pay sufficient attention to content marketing, which has revolutionized search engine optimization and the art of reaching out to customers. Content marketing, paired with responsive design, allows those running E-Commerce sites to reach out to customers in a manner never before possible, and it has been repeatedly shown to lead to better results. All ecommerce sites need to begin to rely on content marketing.
Good Content Matters
In the past, any form of content added to your website would typically lead to better search results. These days, with the introduction of Google's Penguin and Panda algorithms, only good content is a viable solution. Poor, "thin" content can result in negative effects within organic search results.
Aside from search engine rankings, content builds and defines a company's brand image. An example of this is with videos. A rapidly-growing medium in terms of popularity for content publication, great videos result in visitors coming back for more, while poor videos leave users feeling like they've just wasted their time.
Before executing a content marketing initiative, E-Commerce webmasters need to take time to develop a long-term, sustainable plan. The results are well worth the effort required.
The Internet is changing rapidly, and those who are unable to keep up risk falling behind their competitors. Fortunately, this pressure is leading to better usability for consumers; and those who put in the necessary effort will find themselves in a better position than ever before. In addition, these new techniques are designed for the long haul, with an eye for the future. Content marketing, as a discipline, yields the brand awareness, authority, and equity that will serve E-Commerce websites for years, and responsive design enables that content strategy to reach all of its intended target audience. While the process of implementing these strategies may seem a bit demanding, the results make the efforts worthwhile.
SYS-CON Events announced today that MangoApps will exhibit at SYS-CON's 16th International Cloud Expo®, which will take place on June 9-11, 2015, at the Javits Center in New York City, NY., and the 17th International Cloud Expo®, which will take place on November 3–5, 2015, at the Santa Clara Convention Center in Santa Clara, CA. MangoApps provides private all-in-one social intranets allowing workers to securely collaborate from anywhere in the world and from any device. Social, mobile, and eas...
Mar. 26, 2015 03:00 PM EDT Reads: 2,836
SYS-CON Events announced today that Solgenia will exhibit at SYS-CON's 16th International Cloud Expo®, which will take place on June 9-11, 2015, at the Javits Center in New York City, NY, and the 17th International Cloud Expo®, which will take place on November 3–5, 2015, at the Santa Clara Convention Center in Santa Clara, CA. Solgenia is the global market leader in Cloud Collaboration and Cloud Infrastructure software solutions. Designed to "Bridge the Gap" between Personal and Professional S...
Mar. 26, 2015 03:00 PM EDT Reads: 2,429
SYS-CON Events announced today that Akana, formerly SOA Software, has been named "Bronze Sponsor" of SYS-CON's 16th International Cloud Expo® New York, which will take place June 9-11, 2015, at the Javits Center in New York City, NY. Akana's comprehensive suite of API Management, API Security, Integrated SOA Governance, and Cloud Integration solutions helps businesses accelerate digital transformation by securely extending their reach across multiple channels – mobile, cloud and Internet of Thi...
Mar. 26, 2015 02:15 PM EDT Reads: 1,277
SYS-CON Media announced today that @ThingsExpo Blog launched with 7,788 original stories. @ThingsExpo Blog offers top articles, news stories, and blog posts from the world's well-known experts and guarantees better exposure for its authors than any other publication. @ThingsExpo Blog can be bookmarked. The Internet of Things (IoT) is the most profound change in personal and enterprise IT since the creation of the Worldwide Web more than 20 years ago.
Mar. 26, 2015 01:45 PM EDT Reads: 2,090
SYS-CON Events announced today Sematext Group, Inc., a Brooklyn-based Performance Monitoring and Log Management solution provider, will exhibit at SYS-CON's DevOps Summit 2015 New York, which will take place on June 9-11, 2015, at the Javits Center in New York City, NY. Sematext is a globally distributed organization that builds innovative Cloud and On Premises solutions for performance monitoring, alerting and anomaly detection (SPM), log management and analytics (Logsene), search analytics (S...
Mar. 26, 2015 01:00 PM EDT Reads: 3,263
In the midst of the widespread popularity and adoption of cloud computing, it seems like everything is being offered "as a Service" these days: Infrastructure? Check. Platform? You bet. Software? Absolutely. Toaster? It's only a matter of time. With service providers positioning vastly differing offerings under a generic "cloud" umbrella, it's all too easy to get confused about what's actually being offered. In his session at 16th Cloud Expo, Kevin Hazard, Director of Digital Content for SoftL...
Mar. 26, 2015 01:00 PM EDT Reads: 1,237
When it comes to microservices there are myths and uncertainty about the journey ahead. Deploying a "Hello World" app on Docker is a long way from making microservices work in real enterprises with large applications, complex environments and existing organizational structures. February 19, 2015 10:00am PT / 1:00pm ET → 45 Minutes Join our four experts: Special host Gene Kim, Gary Gruver, Randy Shoup and XebiaLabs' Andrew Phillips as they explore the realities of microservices in today's IT worl...
Mar. 26, 2015 12:45 PM EDT Reads: 1,638
The world's leading Cloud event, Cloud Expo has launched Microservices Journal on the SYS-CON.com portal, featuring over 19,000 original articles, news stories, features, and blog entries. DevOps Journal is focused on this critical enterprise IT topic in the world of cloud computing. Microservices Journal offers top articles, news stories, and blog posts from the world's well-known experts and guarantees better exposure for its authors than any other publication. Follow new article posts on T...
Mar. 26, 2015 12:00 PM EDT Reads: 1,174
SYS-CON Events announced today that Site24x7, the cloud infrastructure monitoring service, will exhibit at SYS-CON's 16th International Cloud Expo®, which will take place on June 9-11, 2015, at the Javits Center in New York City, NY. Site24x7 is a cloud infrastructure monitoring service that helps monitor the uptime and performance of websites, online applications, servers, mobile websites and custom APIs. The monitoring is done from 50+ locations across the world and from various wireless carr...
Mar. 26, 2015 11:45 AM EDT Reads: 1,493
Exelon Corporation employs technology and process improvements to optimize their IT operations, manage a merger and acquisition transition, and to bring outsourced IT operations back in-house. To learn more about how this leading energy provider in the US, with a family of companies having $23.5 billion in annual revenue, accomplishes these goals we're joined by Jason Thomas, Manager of Service, Asset and Release Management at Exelon. The discussion is moderated by me, Dana Gardner, Principal A...
Mar. 26, 2015 11:39 AM EDT Reads: 256
Microservice architectures are the new hotness, even though they aren't really all that different (in principle) from the paradigm described by SOA (which is dead, or not dead, depending on whom you ask). One of the things this decompositional approach to application architecture does is encourage developers and operations (some might even say DevOps) to re-evaluate scaling strategies. In particular, the notion is forwarded that an application should be built to scale and then infrastructure sho...
Mar. 26, 2015 11:00 AM EDT Reads: 2,169
For those of us that have been practicing SOA for over a decade, it's surprising that there's so much interest in microservices. In fairness microservices don't look like the vendor play that was early SOA in the early noughties. But experienced SOA practitioners everywhere will be wondering if microservices is actually a good thing. You see microservices is basically an SOA pattern that inherits all the well-known SOA principles and adds characteristics that address the use of SOA for distribut...
Mar. 26, 2015 11:00 AM EDT Reads: 805
Microservices are the result of decomposing applications. That may sound a lot like SOA, but SOA was based on an object-oriented (noun) premise; that is, services were built around an object - like a customer - with all the necessary operations (functions) that go along with it. SOA was also founded on a variety of standards (most of them coming out of OASIS) like SOAP, WSDL, XML and UDDI. Microservices have no standards (at least none deriving from a standards body or organization) and can be b...
Mar. 26, 2015 10:45 AM EDT Reads: 1,948
Our guest on the podcast this week is Jason Bloomberg, President at Intellyx. When we build services we want them to be lightweight, stateless and scalable while doing one thing really well. In today's cloud world, we're revisiting what to takes to make a good service in the first place. Listen in to learn why following "the book" doesn't necessarily mean that you're solving key business problems.
Mar. 26, 2015 10:45 AM EDT Reads: 1,033
Right off the bat, Newman advises that we should "think of microservices as a specific approach for SOA in the same way that XP or Scrum are specific approaches for Agile Software development". These analogies are very interesting because my expectation was that microservices is a pattern. So I might infer that microservices is a set of process techniques as opposed to an architectural approach. Yet in the book, Newman clearly includes some elements of concept model and architecture as well as p...
Mar. 26, 2015 10:15 AM EDT Reads: 1,965
Microservices, for the uninitiated, are essentially the decomposition of applications into multiple services. This decomposition is often based on functional lines, with related functions being grouped together into a service. While this may sound a like SOA, it really isn't, especially given that SOA was an object-centered methodology that focused on creating services around "nouns" like customer and product. Microservices, while certainly capable of being noun-based, are just as likely to be v...
Mar. 26, 2015 10:00 AM EDT Reads: 1,639
Containers and microservices have become topics of intense interest throughout the cloud developer and enterprise IT communities. Accordingly, attendees at the upcoming 16th Cloud Expo at the Javits Center in New York June 9-11 will find fresh new content in a new track called PaaS | Containers & Microservices Containers are not being considered for the first time by the cloud community, but a current era of re-consideration has pushed them to the top of the cloud agenda. With the launch ...
Mar. 26, 2015 09:15 AM EDT Reads: 2,017
An explosive combination of technology trends will be where 'microservices' and the IoT Internet of Things intersect, a concept we can describe by comparing it with a previous theme, the 'X Internet.' The idea of using small self-contained application components has been popular since XML Web services began and a distributed computing future of smart fridges and kettles was imagined long back in the early Internet years.
Mar. 26, 2015 09:00 AM EDT Reads: 2,040
Nike is an organization that understands the shift described by Michael Porter, to a third generation of competitive advantage where technology becomes an integral part of product value. Fitness is a key area where IoT wearable technologies combined with new apps will become differentiating factors that influence which new sports shoes and clothes we buy. They embraced the Phoenix pattern to implement immutable servers, via Amazon AMI instances, and adopted the shared nothing architecture. They ...
Mar. 26, 2015 09:00 AM EDT Reads: 1,521
SOA Software has changed its name to Akana. With roots in Web Services and SOA Governance, Akana has established itself as a leader in API Management and is expanding into cloud integration as an alternative to the traditional heavyweight enterprise service bus (ESB). The company recently announced that it achieved more than 90% year-over-year growth. As Akana, the company now addresses the evolution and diversification of SOA, unifying security, management, and DevOps across SOA, APIs, microser...
Mar. 26, 2015 08:30 AM EDT Reads: 1,905


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Open Tournament
Celebrating 27 Years
April 10th – 12th, 2015East Hanover/Morristown, New Jersey
Welcome to the Gotham Open 2015 Website
Please read below. We've made changes to the tournament, and it's not exactly what you're used to.
The 2015 Gotham Open returns to New Jersey, but now in the more suburban setting of Morris County.
for hotels and banquet space in Jersey City has skyrocketed.
Moving 30 minutes west will save our bowlers and our tournament
on hotel/banquet costs as well as parking and other expenses that are
not necessary to you or us.
Hyatt Morristown at Headquarters Plaza has given us a rate of $109 per
night based on single and double occupancy with complementary parking,
room internet, and use of their 40,000 square foot fitness center.
The hotel is located in the downtown area and within walking
distance of many shops, bars, and restaurants including Veronica's,
where our awards cocktail party will be taking place Sunday afternoon.
Awards Cocktail Party. We've hosted some long banquets here at
Gotham, but not this time. Sunday afternoon at Veronica's it's going to
be a two to two and a half hour cocktail party with tasty finger foods
and hors d'oeuvres. It will be a cash bar at lower drink prices than
your normal hotel banquet with a much larger selection. Also,
the Awards Cocktail Party is OPTIONAL. You can't stay, then don't
pay. When you apply to enter the tournament, be sure to click to attend the event.
It's not included in your Gotham Open 2015 entry fee and may not be
available at registration.
else is different? The bowling house. Nationwide Hanover Lanes,
located on busy Route 10 in East Hanover,is about a 10 minute drive
from the host hotel with a full service bar, snack bar, and 32
synthetic lanes. Same as Hudson, only smaller. And since we're
only doing one shift, we max out at 128 bowlers, so get your
application in early.
also changing the order of bowling. Team first then doubles on
Saturday. Singles on Sunday. More details on the schedule of
events page. Registration will be at Hanover Lanes on Friday
night and lanes will be available for practice.
prize fund will also be higher. The entry fee of $99 includes $65
for prize fund. $25 for the team event and $20 each for singles and
doubles. (it used to be $10 each event and $5 all events) If the
tournament sells out, first place in the tournament's three events will
get at least $400. "All Events" is OPTIONAL and will be a $25 entry
fee. 100% of All events entry fees will be paid as prize fund.
Some of the funds raised pre-tournament, and over the
weekend will also be added to the prize fund. We're also
offering 6 optional scratch divisions, best 3 of 6, and best 3 of 9,
which you can enter with your application, as well as brackets and
mega-brackets during the tournament events.
make sure you read the rules carefully. If you have any questions,
please ask before you fill out your tournament application.
you've made it this far, thanks for reading. We hope you decide to join
us for Gotham Open 2015. Registration is is linked at the top of this page. You can make
reservations for the hotel now by clicking the link on the tournament information page.


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To: If I had a nickel.
In defense of the Craftsman openers, I have two ten year old openers on my doors that work great! One, on a smaller door, get's the most use as it gets treated as a walkthrough for everything I need to do in the front yard. It must get used 10 times a day! I think one great maintenance idea everyone should do is to disengage the lift and roll the door up and down by hand a few times. The opener should not have to lift the door. That's what the springs are for. In ten years I have adjusted the springs twice to maintain fingertip lifting and closing. Do your doors open and close that easily? If they don't, you are depending on your opener to do a job for which it was never intended.
I concur. We had 2 Craftsman openers that were 12 years old when we replaced them about a year ago. Nothing was wrong with them. We just decided to buy new ones with more features(e.g. motion activated lights) since we were replacing the doors anyway.
I also agree with the posters who have said there are probably more Craftsman problems listed here simply because there are more Craftsman openers in use.


text:
Visit create.airbnb.com »
Thanks for taking the time to report this user.
Your participation helps keep Airbnb a safe and trusted
community, and it doesn't go unnoticed!
Our party is from United States, specifically a small town in Northern California called Benicia. We love to sight-see, hike, go to plays/movies, hang out at local pubs and restaurants.
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Megan is a wonderful guest (even though she's a Giants fan . . . hehe). She's quiet, clean and respectful. I highly recommend her.
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Megan was a great guest! She and her friends left the apartment very clean, there was no complains about the noise from the neighbours. I would 100% recommend that guest!
Fantastic guest. No problem at all. I would highly recommend.


text:
kay-hagan Subscribe to Feed
Rays of Hope for Wildlife in 2014 Midterm Elections
The 2014 midterm elections brought progress for wildlife, from Florida's panthers to Alaska's wild salmon, despite some setbacks for friends of conservation. Much of the good news comes from state ballot measures. Given the chance to directly protect wildlife, Americans from the […] Read more >
A Tale of Two Sportsmen's Bills
With Congress these days, it can seem like the best of times and the worst of times. After years of relatively little legislative success, members of both chambers and on both sides of the political divide managed to construct and […] Read more >


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Looking to save money and improve services, Becker County looking outside the box
The Becker County Board is serious about wanting to work with other units of government to save money and improve services.
On Tuesday it hosted a commissioners' room full of officials from townships, cities, school districts -- even the U.S. Fish and Wildlife Service.
Think outside the box
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Winter sports at the high school level involves players who slice across the ice, sprint up and down the hardwood, perform flips and other nimble maneuvers on the mats and those who deftly dance. But there's more to sports than just the acts that are performed on the athletes' respective courts ...Read More
NBAPS School Board
By a unanimous decision at its March 13 regular meeting, the NBAPS School Board decided to go back to a five-day school week. The decision was just one of the many assumptions that were approved when the board finalized its 2014-2015 budget at the meeting. Prior to the regular meeting, the board hel...Read More
The NBAPS School Board recognized the record-breaking high school girls gymnastics team at its meeting March 13. Activities and Community Education Director Brett Carlson said area residents would have to have been "just getting back from the moon" if they didn't know that the team made state ...Read More
When NBAPS Superintendent Deb Henton stepped up to the podium to address the audience at the school board meeting Thursday night, she noted residents don't always get to "hear the good things that happen in the community." What happened to retired North Branch Area Public Schools teacher Marli...Read More
Residents and school staff members who have come to school board meetings in North Branch over nearly the past decade and a half have witnessed a constant during that time: They've seen Kim Salo making decisions, sometimes very tough ones, with her fellow board members. Salo, the NBAPS Board chair...Read More
Kim Salo, NBAPS School Board chairperson, told the board at its Nov. 14 meeting it was with "mixed emotions" that she has decided to resign from her post on the board. Her resignation is effective Dec. 31. Salo said it was a decision made with "careful thought and consideration." She cited a...Read More
The old Main Street School site in North Branch has looked like a large soccer field since the school was demolished about two years ago, but construction on the site might be a possibility again after the North Branch Area Public Schools School Board accepted an offer on the land at its April 25 me...Read More


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AboutA web log for all fans of Walt Disney, The Disney Company, and its many products. Using the theories behind Walt Disney's family oriented entertainment and education, this blog is intended to be a safe read for the whole family. Proud to be a part of Quality Will Out Omnimedia. The Disney Blog is not affiliated with The Walt Disney Company in any way. All Disney parks, attractions, lands, shows, event names, etc. are registered trademarks of The Walt Disney Company. The Disney Blog is affiliated with LaughingPlace.com, the number one Disney Fan site on the internet. Please see creative commons license at the bottom of this page for copyright information. All content on this website is my own and does not necessarily represent the views of my employer or anyone else on the planet. The Disney Blog is supported by advertising and some of the links on this site and in product reviews are revenue share affiliate ads. I also do accept product for review and to give away as prizes. However, I compose all my editorial separate from any decision regarding advertising or affiliate links. YMMV.
Tag Archives: theme park safety
Horse Falls During Headless Horseman Run at Mickey's Not So Scary Halloween Party
One of the most popular portions of Mickey's Not So Scary Halloween Party is the ride of the Headless Horseman. A new video reveals just why it's important that the parade route be completely clear of legs and feet during … Continue reading
Disneyland Cast Member Hospitalized After Accident at Space Mountain
Our thoughts and wishes for a speedy recovery go out to the Disneyland maintenance worker who was hospitalized in critical condition after an after-hours accident at Space Mountain. The incident occurred on October 3rd after the park had closed. The … Continue reading
Posted in Disneyland Tagged accident, Anaheim, cast member, cast member safety, Disneyland, safety, space mountain, theme park, theme park safety 1 Comment
Report on Disney World Monorail Accident of July 2009 released by NTSB
All the adjustments in policy and procedures have already been made, employees disciplined, OSHA fines levied, and the family's lawsuit settled. All that we have been waiting for is the final federal investigation's Accident Report. Today the National Transportation and … Continue reading
Universal Orlando Permanently Changes Dragon Challenge Roller Coaster After Injuries
Universal Orlando has permanently changed the nature of one of its most popular attractions after a pair of guest injuries on the roller coaster. Dragon Challenge, formerly Dueling Dragons, will never duel again. Instead it will become a chase with … Continue reading
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text:
Kenneth Armitage (1916 - 2002 ) was a British sculptor known for his semiabstract bronzes.
Simon Goldhill
Freud's Couch, Scott's Buttocks, Brontë's Grave
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From The Collaborative International Dictionary of English v.0.48 [gcide]:
Aunt \Aunt\, noun [OF. ante, F. tante, L. amita father's sister. Cf. {Amma}.]
1. The sister of one's father or mother; -- correlative to nephew or niece. Also applied to an uncle's wife.
Note: Aunt is sometimes applied as a title or term of endearment to a kind elderly woman not thus related.
2. An old woman; and old gossip. [Obs.] --Shak.
3. A bawd, or a prostitute. [Obs.] --Shak.
{Aunt Sally}, a puppet head placed on a pole and having a pipe in its mouth; also a game, which consists in trying to hit the pipe by throwing short bludgeons at it.
From WordNet (r) 3.0 (2006) [wn]:
1: the sister of your father or mother; the wife of your uncle [syn: {aunt}, {auntie}, {aunty}] [ant: {uncle}]
The dictionary definitions are retrieved from a local copy of two of the open source DICT dictionaries. Click here for the database copyright information. DEFINE.COM is registered as an educational NONPROFIT corporation. We aim to please around here. We believe in using positive reinforcement to get things done. We make suggestions that are intended to make life more enjoyable. We think about efficiency, automation, security, PRIVACY, social and ecological responsibility and positive HUMANITARIAN ethics and VALUES. We are benevolent. DO NO HARM is our motto.


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I've heard a lot of things like chewing your food 15 times will help you lose weight or having a glass of water before each meal will help you eat less. How do I know what is true and what isn't?
- Breara*
Chewing your food 15 times can slow you down if you're a fast eater and allow you to enjoy your food. Any slowing-down technique can help you avoid overeating and better pick up on your body's cues that you're full. Drinking water before you eat probably won't make you any more full, but it won't hurt, either. But eating food with a higher water content, like fruits, vegetables, and even soups, will make you feel more full, so you eat fewer calories.
If you're looking for specific advice on nutrition or weight it's best to ask either your doctor or a registered dietician. But if you find yourself searching for answers online, always use reputable sites. When hunting for info, use common sense — if certain advice seems too good to be true, it probably is.
Reviewed by: Mary L. Gavin, MD
Date reviewed: October 2013
*Names have been changed to protect user privacy.
Note: All information is for educational purposes only. For specific medical advice, diagnoses, and treatment, consult your doctor.
© 1995-
Nationwide Children's Hospital 700 Children's Drive Columbus, Ohio 43205 614.722.2000


text:
A student organization focused on computing has created an endowed scholarship fund to help its members for years to come.
The Association for Information Technology Professionals (AITP), a student organization in the College of Technology, recently set up the fund to offer additional assistance to members. Most of the funds came from AITP's annual Computer Roundtable career fair.


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When you have a cold, you often get a stuffy or runny nose. This prevents you from inhaling aromas from food, so it adversely affects your sense of taste. When you are able to breathe in through your nose, you can smell up to 10,000 varieties of smell, according to Science Project Ideas's website. That might be why soup is about the only thing that sounds good when you have a cold. Once food is actually in your mouth, it gives off smells that must enter your nose to be detected. With blocked nasal passages they will not be noticed.
Effects of Smelling on the Sense of Taste
A spoonful of sugar might "make the medicine go down," but holding your nose will also make it easier to swallow because you cannot smell the unpleasant culprit. Your nose and mouth are both part of your respiratory system, and they work closely together to help you breathe and taste. So they do affect one another in good ways and bad.
Sense of Smell
Sense of Taste
You taste four types of flavors (bitter, sweet, sour and salty) with specific parts of your tongue. Your tongue can also detect a fifth that comes from the food preservative MSG. But take away your other senses like seeing and smelling and food will lack taste and appear bland. You just cannot fully taste a succulent meal without being able to sniff properly.
Smell Conditions
Not only does a cold make it hard to smell, but other conditions do too. Allergies, sinusitis and nasal polyps will all negatively affect your sense of taste. So could hormones or dental issues. Also, taking specific medications can dull both smell and taste. Even a head injury or car accident that shifts your brain inside your skull might diminish your senses. Everyone who ages has a diminished ability to smell because it changes as you get older.
Improving Sense of Smell
You can take certain actions to improve your sense of smell and therefore increase your taste sensations too. Exercise is one of these. After exercising, your sense of smell is heightened, so taste sensations will be more prominent too. It may have to do with more moisture produced in the nasal passages. Another way to improve smell and taste is to give up smoking because it wreaks havoc on associated receptors, thus impairing your whole eating experience.
- Photo Credit Jupiterimages/Goodshoot/Getty Images
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High School TalkSheets on the Old Testament, Epic Bible Stories: 52 Ready-to-Use Discussions
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Product Information
|Format: Paperback
Number of Pages: 128
Vendor: Zondervan
Publication Date: 2012
Availability: In Stock
Series: TalkSheets
Publisher's Description
In just four short years, high school students develop friendships and habits that affect them for the rest of their lives. They need to be inspired through strong role models who embody Christian values. Where better to look for these influences than in the godly heroes of the Bible? The Talksheets series returns with another year of thought-provoking stories from the Old Testament to discuss with your youth group or bible studies. David Lynn shares discussion topics and questions written specifically with high school students in mind, promoting meaningful and thought-provoking conversations. The stories in these pages highlight pure moral principles and practices for teenagers to learn about and emulate. Each of the 52 epic bible stories is easy to use and fit to your lesson plan, including hints and tips to facilitate conversation. These lessons also include optional activities, giving teenagers to actively participate and have fun while they learn.
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Lavender Sugar (To Use With Lavender Biscotti)
Made This Recipe? Add Your Photo
Total Time
Prep10 mins
Cook0 mins
Make ahead! It says you can use in recipes, mix into hot or cold tea, sprinkle over cookies or toast or mix with butter as a spread.
- 5 cups sugar
- lavender flowers
- lavender, stems dried
- Place the 5 cups of sugar in an airtight container.
- Layer lavender flowers and some lavender stems (washed and dried!) with the sugar.
- Every couple days, stir until the stems are completely dry.
- Remove the stems; you may leave the flowers in the sugar if you'd like.


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Someone who likes Christian romance.
Perhaps I didn't read the blurb well enough, but I thought this was going to be a crime thriller - turned out to be a Christian romance full of one-dimensional characters of high moral standing....boring.
The narrator read women's voices in a really annoying way.
I din't get all the way to the end, so not sure.
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- Home » Expat Blogs » China » Guangzhou » Living a Dream in China
Living a Dream in China
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Living a Dream in China
Blog about life, study and relationship in Guangzhou. Follow a journey of a Finnish girl in China and find out how she made her biggest dream come true.
Latest Blog Posts »
- 5 Years in China 2 months ago About five years ago I stepped on an airplane for the very first time since I was two years old and moved to China. A Chinese phrase 回家 huíjiā came to my mind. In Chinese you can't go home, you can only return to your home. And in a sense I was doing just that, […]
- Our First Anniversary 2 months ago One year ago in 14th February 2014 it was no ordinary Valentine's Day. On that year the Chinese Lantern Festival fell on the exact same day, being held on the 15th of the first month of the lunar calendar. As Lantern Festival is also considered a Chinese Valentine's Day, it was a double lucky...
- Visiting Meizhou: Traditional weilongwu architecture 2 months ago When I hear the word Hakka (Han Chinese that speak Hakka Chinese) I always think of the famous tulous (土楼) I've always wanted to visit. But little did I know, that the Hakka people has other traditional architecture as well. January 2015 I finally had the chance to visit Meizhou, Guangdong...
- Honeymoon in Malaysia 3 months ago Its been almost a year since me and Alan got legally married in Guangzhou. In China you get a short marriage holiday that you can use during the first year and we decided to save it to the last month. After our first married year together, it is now the perfect time to explore something […]
- Being Pregnant In China (Guest Post) 3 months ago What it's like to be pregnant in China? No, I don't have any big news for you, but I do have a guest post from my dear friend Ellen who gave birth to a beautiful baby girl at the end of last year. I'm a Russian from Estonia and my husband is a Hakka Chinese […]
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Website Reviews » There are 3 reviews on Living a Dream in China
17:02 PM July 09, 2013
17:02 PM July 09, 2013
I came across this blog while going through a number of blogs written by foreigners living in China. Being the extraordinary experience it is, China has a lot to offer from a completely different culture to many different places to see. I enjoy reading this blog from time to time as it is an honest and is straight from the heart of the blogger, so much so that the readers can relate to, specially the ones who have experience living in China.
Wes Strickland
22:06 PM July 10, 2013
22:06 PM July 10, 2013
I really like this blog. I live in Atlanta in the US, and my wife (of 11 years) is originally from Guangzhou, so I was happy to find someone with a Western perspective to tell me a little about the city life there. The writer is very good at taking the pulse of the world around her. She has unusual experiences and is brave and honest about her reactions. She has a very good attitude towards her life in China, but pulls few punches - a real person in a real place. She has a good heart, and that shows through, too. I've spent a few months in other parts of China, and her take on the life of the foreigner rings true. I know that I can stay on top of things in faraway Guangzhou as long as she keeps writing!
Jason Cullen
20:29 PM July 14, 2013
20:29 PM July 14, 2013
I lived in China for 7 years, including one in Guangzhou, and I was looking for information on universities in Guangzhou when I found this blog. I can say this is one of the best blogs on China. Most of them are alright, as they will bring at least one person's view of that great big unwieldy beast we know and love. But this blog has the right balance between a tried-and-true expat who understands both the language and the culture (without getting all lecture-y or preachy) and that of a newbie ready to explore everything and anything, and she really can't wait for you to come, too. I would recommend this blog to both people prepared for a serious move to China or to people who are just passing through.


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A method and apparatus for reducing particle contamination in a substrate processing chamber during deposition of a film having at least two layers. The method of the present invention includes the steps of introducing a first process gas into a chamber to deposit a first layer of the film over a wafer at a first selected pressure, introducing a second process gas into the chamber to deposit a second layer of the film over the wafer, and between deposition of said first and second layers, maintaining pressure within the chamber at a pressure that is sufficiently high that particles dislodged by introduction of the second process do not impact the wafer.
1. A method of operating a substrate processing chamber, said method comprising steps of:
(a) introducing a wafer into said chamber;
(b) flowing a first process gas from a gas inlet into said chamber at a first selected pressure to deposit a first layer over said wafer;
(c) flowing a second process gas from said gas inlet into said chamber to deposit a second layer over said (wafer) first layer, said second layer being deposited at a second selected pressure; and
(d) flowing, after the step (b) and prior to the step (a), an intermediate gas from said gas inlet into said chamber at a selected intermediate chamber pressure and at an intermediate gas flow rate sufficient to maintain a laminar gas flow between said gas inlet and a chamber exhaust port.
2. The method of
3. The method of
4. The method of
5. The method of
6. The method of
7. The method of
8. The method of
9. The method of
10. The method of
11. The method of
flowing an initial process gas into said chamber; and
forming an initial plasma from said initial process gas to deposit a lining layer on said substrate, said lining layer being deposited before said step (b).
12. The method of
13. The method of
14. The method of
15. The method of
16. The method of claims 15 wherein said oxygen-containing source comprises O2 and said inert gas comprises helium.
This application is related to concurrently filed U.S. Ser. No. 08/599,270 entitled �METHOD AND APPARATUS FOR IMPROVING THE FILM QUALITY OF PLASMA ENHANCED CVD FILMS AT THE INTERFACE�, having Anand Gupta, Virendra V. S. Rana, Amrita Verma, Mohan Bhan and Subrahmanyam Sudhakar listed as co-inventors; and concurrently filed U.S. Ser. No. 08/599,279 entitled �METHOD AND APPARATUS FOR REDUCING PARTICLE GENERATION BY LIMITING DC BIAS SPIKE�, having Anand Gupta, Stefan Wolfe and Maria Galiano listed as co-inventors. Each of the above referenced applications are assigned to Applied Materials Inc, the assignee of the present invention, and each of the above referenced applications are hereby incorporated by reference.
The present invention relates to the fabrication of integrated circuits. More particularly, the invention provides a technique, including a method and apparatus, for reducing particle contamination during substrate processing. The present invention is particularly useful for chemical vapor deposition processing, but may also be applied to plasma etching and other substrate processing techniques.
One of the primary steps in the fabrication of modern semiconductor devices is the formation of a thin film on a semiconductor substrate by chemical reaction of gases. Such a deposition process is referred to as chemical vapor deposition or �CVD�. Conventional thermal CVD processes supply reactive gases to the substrate surface where heat-induced chemical reactions take place to produce a desired film. The high temperatures at which some thermal CVD processes operate can damage device structures having metal layers.
One particular thermal CVD process that has been developed to deposit insulation films over metal layers at relatively low, nondamaging temperatures includes deposition of a silicon oxide layer from TEOS and ozone precursor gases. Such a TEOS/ozone silicon oxide film may be deposited under carefully controlled pressure conditions in the range of between about 100-700 torr, and is therefore commonly referred to as a subatmospheric CVD (SACVD) film. The high reactivity of TEOS with ozone reduces the energy required for a chemical reaction to take place, and thus lowers the required temperature for such SACVD processes.
Another CVD method of depositing layers over metal layers at relatively low temperatures includes plasma enhanced CVD (PECVD) techniques. Plasma CVD techniques promote excitation and/or disassociation of the reactant gases by the application of radio frequency (RF) energy to a reaction zone proximate the substrate surface, thereby creating a plasma of highly-reactive species. The high reactivity of the released species reduces the energy required for a chemical reaction to take place, and thus lowers the required temperature for such PECVD processes.
Semiconductor device geometries have dramatically decreased in size since such devices were first introduced several decades ago. Since then, integrated circuits have generally followed the two year/half-size rule (often called �Moore's Law�) which means that the number of devices which will fit on a chip doubles every two years. Today's wafer fabrication plants are routinely producing 0.5 and even 0.35 micron feature size devices, and tomorrow's plants soon will be producing devices having even smaller geometries.
As device sizes become smaller and integration density increases, one issue that has become increasingly important is the ability of a deposited insulating layer to fill closely spaced gaps (referred to as a film's �gap fill� capability) such as those between adjacent metal lines. Because of their different, yet complimentary film characteristics, one process that has been used successfully to fill gaps up to an aspect ratio of 2.0 or higher, is the deposition of a three layer silicon oxide dielectric film in which a thin PECVD silicon oxide layer is deposited over stepped topography (such as adjacent metal lines) of a substrate, as an initial lining layer and diffusion barrier for an SACVD TEOS/ozone silicon oxide layer that fills in the gaps between the metal lines. A compressively stressed PECVD silicon oxide layer is then deposited over the SACVD layer prevent moisture absorption in the SACVD layer and to counteract the tensile stress of the SACVD layer ensuring that the film has a low compressive stress. The entire deposition sequence takes place in an in situ process.
Another concern in the manufacture of high density integrated circuits are contaminant particles. In particular, contaminant particles attach themselves to unpassivated elements of integrated circuit devices during fabrication, where they can create short circuits or cause reliability or other problems. Therefore, the contaminant particles ultimately reduce the yield of good dies on a conventional semiconductor wafer. Even worse, as feature sizes decrease, the influence of contaminant particles in the fabrication of integrated circuits becomes greater.
Accordingly, semiconductor equipment vendors and users, alike, often rely upon elaborate and expensive techniques to control potential sources of contaminant particles. Such techniques include the use of ultra-clean rooms, super automated handling equipment, and sophisticated process controls during the fabrication of integrated circuits to reduce the potential sources of contaminant particles. However, such techniques can only be of limited success because substantial amounts of contaminant particles in integrated circuit fabrication are actually derived from reactant by-products created when semiconductor wafers undergo processing.
These reactant by-products often attach themselves to interior surfaces of a process chamber and form into a contaminant residue layer. Typically, the contaminant residue layer is derived from by-products of reactant gases and other by-products already attached to interior surfaces of the process chamber. Portions of the contaminant residue layer can flake off and deposit onto unpassivated surfaces of the integrated circuit.
To prevent portions of the contaminant residue layer from damaging the integrated circuit, a variety of cleaning techniques have been used. Some of these cleaning techniques require separate process steps, which include machine shut-down and cleaning, after each deposition step. This is time consuming, expensive, and difficult to achieve. Additionally, when a processing machine is not operating, wafer throughput on the fabrication line drops, rendering the manufacturing process all the more expensive.
In another cleaning technique, referred to as plasma enhanced dry cleaning, an etchant gas, such as fluorine, is introduced into the chamber during a separate cleaning step. A plasma is formed from the etchant gas and constituents from the plasma react with and remove the deposited material from the chamber walls and other areas. Such cleaning procedures commonly need to be performed after every deposition run or after every several deposition runs to be effective in keeping the interior surfaces of the process chamber substantially free from contaminant residues and particles.
In the exemplary PECVD/SACVD/PECVD three layer film described above, a dry cleaning step may be performed after deposition of the SACVD layer to reduce particle contamination. That is, after deposition of the SACVD silicon oxide layer of the film, the wafer is removed without breaking vacuum seal and the chamber is evacuated to pump out remaining gases and loose particles. Next, a fluorine etch step is performed to clean the chamber and remove contaminants and other residue that has built up within the chamber. The etch step includes increasing chamber pressure during the etching process and reevacuating the chamber after completion of the process. Upon completion of the etch step, the wafer is loaded back into the chamber and deposition of the PECVD film is initiated.
Without such a dry clean step, particles tend to build up and collect on the chamber walls and in areas such as the perforated holes of the gas dispersion manifold after deposition of the SACVD layer. The particles built up within the perforated holes may be later forced out of the holes and deposited onto the wafer when the PECVD deposition gases are introduced into the evacuated chamber as described in more detail below. The use of a clean step between the SACVD and PECVD depositions, however, consumes processing time and reduces wafer throughput. Also, the clean step can, in itself, be a source of particle accumulation. Measurements show that particles which may cause contamination problems may build up during this process even in spite of the clean step between depositions. Thus, from the above it can be seen that new methods of reducing particle contamination are desirable.
The present invention addresses the above problems of the prior art by providing a method and apparatus for reducing particle contamination in instances where two or more successive layers of a film are deposited by an in situ process in a substrate processing system. The method of the present invention eliminates the need for a clean step between deposition of the successive layers and does not substantially increase processing time.
In one embodiment of the method of the present invention, a first process gas is introduced into the chamber to deposit a first layer of a film over a substrate at a first selected chamber pressure and a second process gas is introduced into the chamber to deposit a second layer of the film over the first layer. In between deposition of the first and second layers, the pressure of the chamber is maintained at a level that is sufficiently high to prevent a substantial number of particles dislodged by introduction of the second process gas from impacting the substrate.
In a preferred version of this embodiment, particles deposited in perforated holes of a gas distribution manifold through which the first and second process gases are introduced are prevented from impacting the substrate, and pressure in the chamber is maintained at a level greater than or equal to about 1 torr between deposition of the first and second layers.
In another preferred embodiment, the first process gas includes TEOS and ozone and the first pressure level is between about 100-700 torr. Also, the second layer of the film is deposited from a plasma of the second process gas which includes TEOS and an oxygen containing source.
For a further understanding of the objects and advantages of the present invention, reference should be made to the ensuing detailed description taken in conjunction with the accompanying drawings.
FIG. 1 is a cross-sectional diagram of an exemplary CVD processing chamber used according to one embodiment of the present invention;
FIG. 2 is a simplified cross-sectional view of an integrated circuit 600 according to the present invention;
FIG. 3 is a flowchart illustrating steps undertaken in formation of a film according to one embodiment of the method of the present invention;
FIG. 4(a) is a cross-sectional diagram of a CVD processing chamber showing how particles forced out of holes in the gas distribution manifold may impact a wafer being processed;
FIG. 4(b) is a cross-sectional diagram of a CVD processing chamber showing the effect of the present invention on particles forced out of holes from the gas distribution manifold;
FIG. 5 is a flowchart illustrating steps undertaken in formation of one embodiment of the PECVD film deposition step shown in FIG. 2; and
FIGS. 6(a) and 6(b) are cross-sectional diagrams of a CVD processing chamber illustrating the position of the wafer relative to a purge gas ring in different processing steps of a preferred embodiment of the present invention.
One suitable CVD machine in which the method of the present invention can be carried out is shown in FIG. 1 which is a vertical, cross-sectional view of a simplified, parallel plate chemical vapor deposition reactor 10 having a vacuum chamber 15. Reactor 10 contains a gas distribution manifold 11 for dispersing deposition gases through perforated holes in the manifold to a wafer, not shown, that rests on a susceptor 12. Susceptor 12 is highly thermally responsive and is mounted on a support fingers 13 so that susceptor 12 (and the wafer supported on the upper surface of susceptor 12) can be controllably moved between a lower loading/off-loading position and an upper processing position 14 which is closely adjacent manifold 11.
When susceptor 12 and the wafer are in processing position 14, they are surrounded by a baffle plate having a plurality of spaced holes 23 which exhaust into an annular vacuum manifold 24. During processing, gas inlet to manifold 11 is uniformly distributed radially across the surface of the wafer in a laminar flow as indicated by arrows 21. The gas is then exhausted via ports 23 into the circular vacuum manifold 24 by a vacuum pump system (not shown). Before reaching manifold 11, deposition and carrier gases are input through gas lines 18 into a mixing system 19 where they are combined and then sent to manifold 11.
The deposition process performed in reactor 10 can be either a thermal process or a plasma enhanced process. In a plasma process, a controlled plasma is formed adjacent to the wafer by RF energy applied to distribution manifold 11 from RF power supply 25 (with susceptor 12 grounded). Gas distribution manifold 11 is also an RF electrode, while susceptor 12 is grounded. RF power supply 25 can supply either single or mixed frequency RF power to manifold 11 to enhance the decomposition of reactive species introduced into chamber 15.
An external lamp module 26 provides a collimated annular pattern of light 27 through quartz window 28 onto an annular outer peripheral portion of susceptor 12. Such heat distribution compensates for the natural heat loss pattern of the susceptor and provides rapid thermal and uniform susceptor and wafer heating for effecting deposition.
Typically, any or all of the chamber lining, gas inlet manifold faceplate, support fingers 13, and various other reactor hardware is made out of material such as aluminum or anodized aluminum. An example of such a CVD apparatus is described in U.S. Pat. No. 5,000,113 entitled �Thermal CVD/PECVD Reactor and Use for Thermal Chemical Vapor Deposition of Silicon Dioxide and In-situ Multi-step Planarized Process,� issued to Wang et al. and assigned to Applied Materials, Inc., the assignee of the present invention, which is incorporated herein by reference for all purposes.
A motor 32 raises and lowers susceptor 12 between a processing position 14 and in a lower, wafer-loading position. Motor 32, gas mixing system 19 and RF power supply 25 are controlled by a processor 34 over control lines 36. Processor 34 operates under the control of a computer program stored in a memory 38. The computer program dictates the timing, mixture of gases, RF power levels, susceptor position, and other parameters of a particular process.
The above CVD system description is mainly for illustrative purposes, and other plasma CVD equipment such as electron cyclotron resonance (ECR) plasma CVD devices, induction coupled RF high density plasma CVD devices, or the like may be employed. Additionally, variations of the above described system such as variations in susceptor design, heater design, location of RF power connections and others are possible. For example, the wafer could be supported and heated by a resistively heated susceptor. The layer and method for forming such a layer of the present invention is not limited to any specific apparatus or to any specific plasma excitation method.
FIG. 2 illustrates a simplified cross-sectional view of an integrated circuit 100 according to the present invention. As shown in FIG. 2, integrated circuit 100 includes NMOS and PMOS transistors 103 and 106, which are separated and electrically isolated from each other by a field oxide region 120. Each transistor 103 and 106 comprises a source region 112, a drain region 115 and a gate region 118.
A premetal dielectric layer 121 separates transistors 103 and 106 from metal layer M1 with connections between metal layer M1 and the transistors made by contacts 124. Metal layer M1 is one of four metal layers, M1-M4, included in integrated circuit 100. Each metal layer M1-M4 is separated from adjacent metal layers by respective inter-metal dielectric layers 127 (IMD1, IMD2 and IMD3). IMD layers 127 may include a lining layer 130, a gap fill layer 133 and a cap layer 136. Adjacent metal layers are connected at selected openings by vias 126. Deposited over metal layer M4 are planarized passivation layers 139. Similar to IMD layers 127, passivation layer 139 may include a lining layer 142, a gap fill layer 145, and a cap layer 148.
The layer of the present invention may find uses in each of the dielectric layers shown in integrated circuit 100. The layer of the present invention may also be used in damascene layers which are included in some integrated circuits. In damascene layers, a blanket layer is deposited over a substrate, selectively etched through to the substrate and then filled with metal and etched back or polished to form metal contacts such as M1. After the metal layer is deposited, a second blanket deposition is performed and selectively etched. The etched areas are then filled with metal and etched back or polished to form vias 126.
It should be understood that the simplified integrated circuit 100 is for illustrative purposes only. One of ordinary skill in the art could implement the present method for fabrication of other integrated circuits such as microprocessors, application specific integrated circuits (ASICS), memory devices, and the like.
The present invention may be employed to reduce particle contamination in an in situ process in a substrate processing chamber such as the exemplary chamber described above. One specific application of the present invention is for the deposition of an IMD layer such as any one of layers 127 shown in FIG. 2 above. In this specific application, the method of the present invention is employed to deposit a three layer (PECVD/SACVD/PECVD) silicon oxide film. An initial PECVD layer is deposited as lining layer 130. Lining layer 130 acts as a diffusion barrier between gap fill layer 133 and a respective underlying metal layer M1-M3. The SACVD layer is then deposited over layer 130 to fill the gaps between adjacent metal lines in the respective metal layer M1-M3. Afterwards, a final PECVD layer 136 is deposited to form a cap over SACVD layer 133 preventing that layer from absorbing moisture and counteracting the SACVD layer's tensile stress level.
To form the PECVD/SACVD/PECVD film according to the present invention, the wafer is loaded in vacuum chamber 15 through a vacuum-lock door, placed onto susceptor 12 and moved into processing position 14 (FIG. 3, step 200). A process gas that includes a mixture of TEOS and oxygen (O2) precursor gases is introduced into chamber 15 and a plasma is formed to deposit initial PECVD layer 130 (step 205). During deposition of layer 130, the pressure in the chamber is set and maintained at between about 1-20 torr and the chamber is heated to a temperature of between about 200-500 degrees Celsius. Preferably, chamber pressure is maintained at between about 6-12 torr and temperature is maintained at between about 360-440 degrees Celsius. The plasma may be formed by the application of either single or mixed frequency RF power. When a mixed frequency RF power source is used, the high frequency RF source of 13.56 MHz is driven at between about 150-1000 Watts and preferably at between about 600-800 Watts; and a low frequency RF source of between about 200 KHz to 2 MHz as driven at between about 50-500 Watts and preferably at between about 50-150 Watts.
After deposition of layer 130, a new process gas is introduced into the chamber, while temperature, pressure and other processing conditions are controlled to deposit SACVD silicon oxide layer 633 (step 210). This process gas includes a mixture of ozone, TEOS and an inert carrier gas such as helium; deposition temperature is maintained at between about 300-480 degrees Celsius and preferably at between about 380-420 degrees Celsius; and deposition pressure is maintained at between about 200-700 torr and preferably at between about 350-500 torr. Of course, processing conditions will vary according to the desired characteristics of the deposited film.
After deposition of the SACVD layer is complete, pressure within chamber 15 is maintained at a level greater than or equal to about 1.0 torr and the wafer is left in the chamber (step 215). Preferably, pressure is maintained at a level between the pressure used during deposition step 210 and 220, and most preferably pressure is decreased during step 215 from the pressure level used in step 210 to about the level used in subsequent PECVD processing step 220 while helium or another inert gas is introduced into the chamber. The rate at which pressure is decreased in step 215 can vary and can be 100 torr/second or more.
Next, a process gas including silicon and oxygen precursor gases is introduced into chamber 15 and a plasma is formed to deposit PECVD capping layer 136 (step 215). Again, chamber pressure, temperature and other variables are controlled as appropriate. In this example, pressure in the chamber is set and maintained at between about 1-20 torr and temperature is set and maintained at between about 200-500 degrees Celsius. Preferably, pressure is maintained at between about 6-12 torr and temperature is maintained at between about 360-440 degrees Celsius. Any increase or decrease in pressure from step 215 is preferably performed at a rate of change less than about 2 torr/second so as to not generate large DC bias spikes and thereby reduce particle formation (step 305) as described in more detail in applicants' copending patent application entitled �Method and Apparatus For Reducing Particle Generation By Limiting DC Bias Spike� previously mentioned. The plasma may be formed by the application of either single or mixed frequency RF power. When a mixed frequency RF power source is used, the high frequency RF source of 13.56 MHz is driven at between about 150-1000 Watts and preferably at between about 600-800 Watts; and a low frequency RF source of between about 200 KHz to 2 MHz as driven at between about 50-500 Watts and preferably at between about 50-150 Watts.
The above process differs from previously implemented multi layer PECVD/SACVD/PECVD silicon oxide processes in that chamber 15 is not evacuated to almost vacuum levels (millitorr range) after completion of the SACVD deposition step. This difference is significant in that particles from the SACVD deposition step tend to build up and collect in perforated holes of the gas dispersion manifold and other areas. When the chamber is evacuated to a pressure in the millitorr range and new deposition gases or other gases are introduced for the PECVD deposition step, these particles are forced out of the holes. Because of the low chamber pressure, the gas flow at this point is not yet established as a uniform, laminar flow and there is little or no drag force on the forced-out particles. Thus, as shown in FIG. 4(a), the particles may impact the surface of wafer 225 upon being dislodged from dispersion manifold 11 as indicated by arrows 230. The effect is sufficiently pronounced that particles on the surface of the wafer can be observed in the pattern of the dispersion manifold through the use of a wafer surface scanner such as the Tencor 6200 manufactured by Tencor Instruments.
The method of the present invention maintains the pressure at or above a level at which a laminar gas flow is established upon introduction of the PECVD gases and at which sufficient drag is exerted on the particles forced out of the dispersion head such that the particles do not impact the wafer when gases are reintroduced into the chamber. Instead, as shown by arrows 235 in FIG. 4(b), most of these particles pass along with the gas stream in a laminar flow above the surface of the wafer and out the exhaust port into the foreline without impacting the wafer. This process is sufficiently effective that the need for a dry clean step between the SACVD and PECVD processing steps is eliminated.
Eliminating the clean step saves processing time and increases throughput. As previously described, the use of a typical clean step between depositions requires evacuating the chamber, removing the wafer from the chamber, introducing an etchant gas and forming a plasma from the gas to etch the chamber, removing the etchant species, and then reintroducing the wafer into the chamber. This sequence of steps may require between about 60-150 seconds or more to execute. In contrast, the transition between SACVD deposition step 210 and PECVD deposition step 220 can take place in as few as 2-10 seconds according to the present invention. The total time it takes to transition from step 210 to step 220 will vary according to, among other factors, the deposition pressure during the SACVD step, the rate at which pressure is decreased and the pressure level used to ensure a sufficient drag force is exerted on dislodged particles.
Further particle reduction can be ensured by careful control of other processing parameters. Such steps can be performed in conjunction with or in lieu of step 215. In one example, deposition of the PECVD layer shown in step 220 of FIG. 3 is performed by a five-step process shown detail in FIG. 5. In this example, oxygen in the form of O2 is initially introduced into the chamber before other deposition gases (step 300). After several seconds an inert gas such as helium is introduced and pressure in the chamber is slowly increased, or decreased as appropriate (step 305), at a rate of change of 1 torr per second. Other rates may be used as well, but preferably pressure is increased or decreased at a rate of about 2 torr/second or less.
Next, RF power is applied and ramped up to full power (the power level at which the RF power supply is driven at during step 315) at a rate of about 50 Watts/second (step 310). Other rates may be used as well, but preferably RF power is increased at a rate of 200 Watts/second or less. After full RF power has been reached, TEOS is introduced into the chamber to effect deposition of the silicon oxide layer (step 315). Processing conditions are maintained for a selected period of time during deposition to deposit a layer having a desired thickness.
After deposition is complete, the TEOS/helium flow is stopped, chamber pressure is decreased at a rate of about 1 torr/second and RF power is decreased at a rate of about 50 Watts/second to a level sufficient to maintain the plasma. Other rates of pressure and RF power decrease may be used as well, but preferably pressure is decreased at a rate of 2 torr/second or less and RF power is decreased at a rate of 200 Watts/second or less. Oxygen flow is also increased at this time to help purge particles from the chamber (step 320). As described in more detail in U.S. Pat. No. 5,622,595, entitled REDUCING PARTICULATE CONTAMINATION DURING SEMICONDUCTOR DEVICE PROCESSING by A. Gupta and J. Lanucha, issued Apr. 22, 1997, and assigned to Applicants, which is hereby incorporated by reference, reducing pressure within the chamber results in particles suspended in the plasma rising closer to the gas distribution manifold and further from the upper surface of the wafer. Thus, the suspended particles are in effect lifted up into or closer to the maximum flow path of the increased O2 flow which helps ensure that the particles will be swept out of the chamber. After the chamber has been purged, O2 flow is stopped and the chamber is evacuated (step 325).
In one preferred embodiment of the PECVD process illustrated in FIG. 5 and implemented in a DxZ chamber outfitted for 200 mm wafers in a Precision 5000 processing system manufactured by Applied Materials, oxygen is introduced in step 300 at a rate of 600 sccm. Then, after 8 seconds, helium is introduced into the chamber at a rate of 800 sccm for step 305 and the rate at which O2 is introduced is decreased to 50 sccm. During this period, processor 34 controls throttle valve 32 to increase pressure within the chamber to 8.2 torr. Approximately 10 seconds after the introduction of helium, RF power (13.56 MHz) is increased from 0 Watts to 725 Watts at a rate of 50 Watts/second for step 310.
Step 315 is initiated 20 seconds after the start of step 310 when full RF power has been reached and maintained for about 5.5 seconds. In step 315, TEOS is combined with the helium flow and introduced into the chamber at a rate of 800 sccm and the oxygen flow rate is increased to 600 sccm. This step is maintained for a selected period of time to deposit a silicon oxide layer having a desired thickness. After deposition is substantially complete, the TEOS/helium flow is stopped, RF power is decreased to 50 Watts at a rate of decrease of 150 Watts/second for step 320 and chamber pressure is decreased to 2 torr at a rate of 1 torr/second. The rate at which O2 is introduced into the chamber is also increased at this time to 2000 sccm to help ensure that particles are pumped out of the chamber. Approximately 6 seconds later in step 325, the introduction of O2 is stopped and the chamber is evacuated.
The above parameters set forth as one preferred version of the PECVD recipe are meant to serve exemplary purposes only. A person of skill in the art will recognize that gas introduction rates, time periods and other conditions may be varied and that some parameters such as gas introduction rates and RF power levels will depend in part on chamber volume.
Another method of further reducing particles includes the step of lowering the susceptor during or just before step 320 from its processing position to a position where the surface of the wafer is resting below the point at which exhaust gases are pumped out of the chamber as shown in FIGS. 5(a) and (b). Lowering the wafer in this manner helps ensure that particles will not impact the wafer when the particles are purged from the chamber in step 320 and 325.
In FIG. 6(a), wafer 230 is sitting on susceptor 12 in processing position 14. In this position, the upper surface of the wafer is above the lower surface of exhaust ring 500. In a preferred embodiment where the previously described exemplary chamber is used, position 14 is between approximately 200-400 mils from the gas distribution manifold. Such positioning provides for more uniform deposition on the wafer.
As shown in FIG. 6(b), however, the wafer is moved to a position 510 such that the upper surface wafer is slightly below or just even with the lower portion of exhaust ring 500. In a preferred embodiment where the previously described exemplary chamber is used, position 510 is between approximately 470 mils or more from the gas distribution manifold. Such positioning lessens the chance that any individual particle pumped out of the chamber during steps 320 and 325 will impact the wafer.
This step of lowering the wafer can also be performed as part of or in lieu of step 215 used to decrease the amount of particles that impact the wafer upon introduction of the PECVD process gas. Moving the wafer further away from the gas distribution manifold at this stage of processing increases the distance any individual particle must travel to impact the wafer, and therefore, decreases the chance of such a collision.
To prove the effectiveness of the present invention, experiments were performed depositing various silicon oxide films with and without the benefits of the method of the present invention and measuring particle the particle count at various stages of processing. Particle counts were measured with a Tencor 6200 wafer surface scanner. The experiments were performed in a restively heated DxZ chamber outfitted for 200 mm wafers of the Precision 5000 processing system manufactured by Applied Materials.
In each experiment, a 5000 Å thick SACVD layer was deposited from TEOS and ozone precursor gases and a 5000 Å thick PECVD layer was deposited over the SACVD layer from TEOS and O2 precursor gases.
In the first experiment, the PECVD layer was deposited immediately after deposition of the SACVD oxide layer and no clean sequence was performed between the two deposition steps. Measurements taken after the completion of the SACVD process and at the start of the PECVD process indicated that introduction of the PECVD process gas added 22 particles having a diameter greater than 0.21 micrometers into the chamber. Measurements taken after RF power was turned ON from 0 Watts to 725 Watts at a rate of 500 Watts/second to form the plasma in the PECVD step indicated that 158 particles were added during the RF ramp up sequence. Further measurements taken after completion of the PECVD layer indicated that the entire SACVD/PECVD process added 316 particles.
The same process was followed in a second experiment except that a dry clean step in which a mixture of C2F6 (introduced at 900 sccm), O2 (introduced at 950 scm) and NF3 (introduced at 75 sccm) was used to clean the chamber between the SACVD and PECVD deposition steps. The chamber was heated to 400 degrees Celsius for the clean step, and RF power was applied from a 13.56 MHz power supply driven at 950 Watts. Pressure in the chamber was set and maintained at 9.5 torr. After completion of the clean step, measurements indicated that 20 particles having a diameter greater than 0.21 micrometers were added.
In the third experiment, the SACVD layer was not followed by a clean step, and instead, the PECVD layer was deposited according to the steps illustrated in FIG. 5 using the gas flow rates and times described with respect to the preferred embodiment discussed in respect to that figure. Particle measurements taken after completion of this process indicate that the combined SACVD/PECVD process did not generate any significant number of particles of 0.21 micrometers in diameter or greater, and in fact, actually resulted in a net loss of 4 such particles.
Having fully described several embodiments of the present invention, many other equivalent or alternative methods of depositing the low dielectric constant oxide layer according to the present invention will be apparent to those skilled in the art. For example, while the invention was illustrated by a three layer in situ film, the present invention is applicable to any film that includes two or more layers deposited by an in situ process. Also, while the illustrated embodiments concerned a process using TEOS as a source of silicon and O2 as a source of oxygen, it is possible to use other sources silicon sources such as silane, and other oxygen sources such as N2O, CO or others. It is also possible to use additional dopant gases such fluorine, boron, phosphorus or other dopants and deposit different films, such as silicon nitride or others, altogether. For example, the present invention may be used to deposit a passivation layer such as layer 139 shown in FIG. 2. In this example, an initial PECVD oxide layer is deposited as lining layer 142, an SACVD TEOS/ozone layer is deposited as gap fill layer 145 and a silicon nitride layer is deposited as cap layer 148. These alternatives and equivalents along with others are intended to be included within the scope of the present invention.
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Smashing Pumpkins or Confessions of a Mother Bear
(From the blog: They Are the Apples of My Pie)
Coming from a long line of mother bears, I can be a teacher's best friend or worst nightmare. Being a teacher of teachers I often
am a teacher's worst nightmare. Having my son start Jr. Kindergarten with an educated obsessive compulsive mother bear is a recipe for disaster. Fortunately, my son's teacher is not only very patient and a bit of a mother bear herself, she knows how to
handle me.
the first fifteen minutes of meeting Mrs. H I became her head room mom, her snack person, the band aid mom, the Monday center helper, the holiday party planner and the field trip mom. I then offered to knit Santa hats for all the children for Christmas
(I have just completed #3- 15 more to go!). I realized on the way home that I might have been a little too enthusiastic. My mother bear was head room mom until I was in college, so it runs in the family. She has also been room mom in each of her grandchildren's
classrooms. I learned from the best.
have been going relatively well. I have not completely embarrassed my son, became fast friends with the parents of his two best buddies and have not driven Mrs. H completely out of her mind.Then came the field trip to the pumpkin patch. Mrs. H asked me if
I would like to bring the snacks for the class. I answered with the only word I know, "Yes!" and off to Target I went.
have a confession to make: I adore anything thematic, and if there isn't a theme I make one. My 17 year old asked me if I could buy her some thank you notes so that she could thank a few teachers who have been especially kind. This should have been a straightforward,
simple task. Not for me. Not only did I buy the thank you notes, I found some that matched her school's color, took pictures of their classrooms and had them placed on the front of each note with her name engraved underneath them. Yes I am that nightmare
and no she has not asked me to help her with anything since. The pumpkin patch snack had my name written all over it and my son, being 5, was too young to be horrified.
is not a good place for me to be when I have a project. I have too much to choose from so I tend to choose everything. First came the snack. What would appeal to all the children? Do any of them have food allergies that I don't know about? Can I have
a Halloween theme or will I offend a parent? Are sugary foods a no-no? Should I pack juice, water, or punch? Decisions, decisions. I decided to purchase goldfish crackers, raisins, fruit roll ups and m&ms for the snack- that should cover every base.
For the drink I purchased punch that was actually fruit juice with a serving of vegetables in it (all disguised in a flurry of sugar water). I then purchased little gliders, pumpkin glasses, and pumpkin pins. Being a private Christian school I found pumpkin
pins with Jesus on them. Pumpkin Jesus- it was all coming into place. Now, for some orange paper bags. Yes they needed to be orange because we were going to the pumpkin patch. Target did not carry any. I was deeply disappointed because it affected my
Jr. Kindergarten pumpkin patch snack vision. Then I saw them on the back wall- glowing spherical orange perfection!. I would use plastic jack-o-lanterns instead of bags. I would be snack mother of the year! I purchased 24 (just in case baby brothers and
sisters came) and dragged them to the cash register. Luckily I have a Ford Flex and with a little finagling and the ability to push the third row of seats flat, I was able to put them all in the car.
day of the pumpkin patch came. With my own mother bear being out of town I enlisted the help of my best friend to set up the tables and help with the children. I met the owners and their son was gracious enough to set up two tables for me, cleaned them and
helped me set the Jack o lantern's up for the children. This gave me time to take pictures of the parents and children which I offered to turn into a class commemorative book (I know- I have issues). When it came time for the snack I realized that the entire
Jr. K- three classes- had gone on the field trip, not just my son's class. All the little ones came to my pumpkin table, where the other teacher's and room mothers explained that the pumpkins were not theirs and their snack was going to be on the bench
nearby. There, the room mother handed out cookies and punch. There was some crying from a few of the children and some major dirty looks from the other room mothers as well as some worried glances from the other teachers. I felt sick to my stomach. I had
no idea that there would be other classes and that my over achieving ways would lead to tears and anger. I went home with a heavy heart and an empty pumpkin bucket.
H and I had a long conversation the next morning. I now know when our class will be celebrating by themselves and when they will be celebrating with the other classes. When we are by ourselves I can be the over achieving mother bear with homemade goodies,
match box cars and princess wands. When we are with the other classes, I am the store bought cookies and warm juice room mom. Maybe homemade cookies, finger sandwiches , and chilled juice room mom. Maybe I can by matchbox cars and wands for the entire
Jr. K. No matter what, the next time I will tone it down a bit.
just received a call from the lady who heads up Teacher Appreciation Day. It is next Monday. They asked if I would bring a salad. I am going to make an antipasto salad with homemade parmesan rolls and homemade garlic butter. I took out my crystal bowls
I received for my wedding, then thought better of it. I went to Smart and Final and purchased a large faux crystal bowl (in other words plastic) and some cute floral trays. I am going to behave if it kills me!
Now, just because I am behaving does not mean that my salad has
to be short on taste. If you want a yummy antipasto salad, this is what you will need:
1 ½ heads of Romaine lettuce chopped
2 medium avocados
3 roma tomatoes
4 oz dry Italian salami
4 oz. pepperoni
8 oz. prosciutto chopped finely and cooked until crisp
8 ounces soft mozzarella cheese cut into small bite size chunks (feel free to substitute any other cheese you would like such as monterey jack,
cheddar, etc.)
¼ cup chopped pepperoncini peppers (drained of liquid)
¼ to ½ cup pitted kalamata olives
½ cup garbanzo beans (optional)
¼ cup freshly grated romano-pecorino cheese.
Combine all ingredients and dress with ¼ cup extra virgin olive oil, 1 tablespoon lemon, ¼ cup aged balsamic vinegar and greek seasoning to
taste (most supermarkets carry this). Toss and enjoy with warm crusty bread. Enjoy!
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The US Goverment is written down on paper. It is great if you want to learn how a bill becomes a bill. What are the President's job, representatives and senate and the judges. It also tells you the history of how the government started. What trials made the goverment laws to be amended. It has a lot of information. I like it.Was this review helpful? Yes NoThank you for your feedback. Report this reviewThank you, this review has been flagged.
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1. Cut the fillets into individual portions.
2. In in an 8 x 8-inch glass dish, mix the soy sauce, lemon juice and rind, ketchup, garlic and ginger.
3. Set the fish pieces in the dish, rolling them around in the sauce.
4. Cover the dish with waxed paper and place in the microwave.
5. Cook for 5 to 6 minutes in the microwave at High, until the fish flakes easily.
6. Let the dish stand for 5 minutes, covered.
7. Serve basted with the sauce in the dish.