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Van Nuys built car, original black plate. Cross Ram intake and fiber glass hood with hood pins Car has been through a complete frame off restoration. Engine... More
1969 Chevrolet Camaro SS350 with factory 4speed. Documented Flawless Showpiece. This is one of the nicest Camaro's you will ever see! September 29th, 1966: Enter... More
1969 RS/Z28 CAMARO 350 V8 Stroked to 408, Hydraulic Roller Cam, Pertronic Distributor, Tremec 5 Speed Transmission, 12 Bolt Posi with 3.73 gears, Rolling on... More
SUPER NICE ROTISERRIE RESTORATION!! THIS IS A REPLICA CAR BUT DATE CORRECT 427/425 HP "512" BLOCK WITH "MN" STAMPING ON DECK. DATE CORRECT AND... More
1969 Chevrolet Camaro SS/RS, convertible, Z11, Pace Car 55k miles on the odometer Engine: 350 small block Transmission - 4 speed manual Power top ****Matching numbers**** Full restoration finished 2... More
Hugger Orange on black vinyl, original, all numbers matching COPO (Central Office Production Order) 427 with M21 4 speed manual. Originally ordered by Haney... More
1969 Chevrolet Camaro "COPO" Replica professional frame off restoration. Date correct 427cid with GM "winters" aluminum heads and intake. Date correct Muncie 4 speed... More
SS Clone 396 manual. All body work done professionally, excellent condition. Garage kept, all new leather interior. ... More
This is a resto-mod build. I have put in an LS1 motor and a 4L60E tranny. 3.73 10 bolt rear end, frame ties, QA1... More
For Sale is a 1969 Camaro SS in Azure Blue. Frame-off restoration, highly detailed undercarriage, 396/375hp with 4-Speed Muncie and 12 bolt Positrac. Power steering, power... More
396 350 hp. 4 speed. X22. Fuly Documented including protect-o-plate. Endura front bumper. Cowl induction hood. Rear bumper guards. Console and gauges. Simulated wood steering... More
1969 Pro-Touring Camaro, Black / Black Leather Interior, GM Crate Motor 572, 620 Horsepower, Vintage AC, 5 Speed Transmission, Recaro seats, Billett Specialities wheels... More
1969 Chevrolet Camaro RS LM1 Convertible, 79,000 miles from new. Engine # 19N507319, Daytona Yellow, Black Custom Interior, Power Steering, Power Drum Brakes, AM Radio,... More


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NCAA Tourney Continues Record Ratings Coyotes Analyst On Leave After Arrest Burke Explains How She Reached Current Role Xfinity Series Audience Down A Bit Media Notes ESPN To Integrate Outbrain Content Online Dodgers' TV Issues Again Cloud Season Goodell: It Was Time To Suspend Blackouts Media Notes Radio Show Delayed Due To Skipper Impersonator
Upcoming Conferences and Events
SBD/September 2, 2011/Media
College Football Reporter Bruce Feldman Slams ESPN After Leaving For CBS
Published September 2, 2011
HIS SIDE OF THE STORY: Asked Thursday morning what ESPN execs were "angry about," Feldman said, "I don't know. See, that's the thing. … You guys approved the book, you were told about it, you were told when there was a lawsuit going to happen. You were told about everything." Feldman contends ESPN execs also "sent out a 'do not book' list to their talent producers," prohibiting him from appearing on network programming. Feldman then recalled a conversation with ESPN The Magazine Editor-at-Large Gary Belsky, who told the reporter, "We want to extend you for another three years, you'll get a raise." Feldman: "After that had happened, a week later I'm in Bristol and the three-year extension and the raise then all of a sudden became no extension, we'll offer you a one-year deal, no raise. Well something changed. There was some kind of disciplinary action that clearly was taken." Syndicated radio host Dan Patrick, another former ESPN personality, said, "I know the feeling you're in and just so you know, it might get a little worse before it gets better because they fought me tooth-and-nail to try to put me out of business. Just understand that." Feldman said, "In the last six weeks, I've seen what they are capable of. I'm glad I'm at a different place" ("The Dan Patrick Show," 9/1). Feldman added, "I'm leaving a place, at ESPN, where I had lost all faith in the management there" (WSJ.com, 9/1).

subset: commoncrawl


text:
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In an oxide isolated semiconductor structure having an epitaxial layer formed on a monocrystalline substrate, a buried, laterally extending PN isolation junction in said structure, and oxidized isolation regions extending through said epitaxial layer to said PN isolation junction, thereby to form a plurality of electrically isolated pockets of semiconductor material, a dopant is located in those regions of the semiconductor material directly adjacent the oxidized isolation regions to prevent unwanted current flow called "channeling." The region formed by this dopant is often referred to as the field predeposition region. Typically, to form the field predeposition region, a selected dopant is placed in the exposed surface regions of the epitaxial semiconductor material just prior to the formation of the oxidized isolation regions. The field predeposition and oxidation of the epitaxial semiconductor material also cause the formation of a conductive buried region from that portion of the field predeposition dopant in the epitaxial pockets directly adjacent the oxidized semiconductor material. If desired, a collector sink then may be formed in the epitaxial pocket without disrupting the function of the conductive buried region. The conductive buried region may be utilized to facilitate manufacture of smaller memory circuits than heretofore available, compact junction field effect transistors, and other integrated circuit structures.
1. Structure comprising a pocket of semiconductor material separated from adjacent pockets of semiconductor material by insulation, characterized in that:
said insulation (115) extends through said semiconductor material to a laterally extending PN isolation junction formed in said semiconductor material, thereby to electrically isolate said pocket of semiconductor material;
a first region (beneath 124 and 125) of a first conductivity type is formed in said pocket of semiconductor material;
a second region (122) of said first conductivity type is formed in said pocket of semiconductor material;
a third region (120) of said first conductivity type is formed in said pocket of semiconductor material;
a fourth region (123) of opposite conductivity type to said first conductivity type is formed in said pocket of semiconductor material between said first and said second region;
a fifth region (121) of opposite conductivity type is formed in said pocket of semiconductor material between said second region and said third region;
said fourth region (123) being formed in said pocket of said semiconductor material so as to leave a conductive buried region (151) between said fourth region (123) and said insulation (115) and adjacent said insulation and above said PN junction, and said fifth region (121) being formed in said pocket of said semiconductor material so as to leave a conductive buried region (150) between said fifth region (121) and said insulation (115) adjacent said insulation (115) and above said PN isolation junction, to electrically connect said first region (beneath 124 and 125) and said second region (122), and to electrically connect said second region (122) and said third region (120);
a sixth region (124) of opposite conductivity type formed in said first region; and
means (143, 141, 140) for making electrical contact to said sixth region, said second region and said third region.
2. Structure as in claim 1 further characterized in that said pocket of semiconductor material comprises epitaxial silicon material and said first conductivity type comprises P type conductivity.
3. Structure as in claim 1 further characterized in that said pocket of semiconductor material comprises epitaxial silicon material and said first conductivity type comprises N type conductivity.
4. Structure as in claim 1 further characterized in that said first region (beneath 124 and 125) comprises the base of a transistor, said second region (122) comprises the base contact of said transistor, said third region (120) comprises a base resistor, said fourth region (123) comprises the collector contact of said transistor, said fifth region (121) comprises an unused collector contact of said transistor, and said sixth regin (124) comprises the emitter of said transistor.
5. Structure as in claim 4 further characterized by including a seventh region (125) of opposite conductivity formed in said first region, thereby to form a second emitter in said transistor.
6. Structure as in claim 1 further characterized by including a buried collection region (111) underlying the lateral extent of said pocket of semiconductor material, said buried collector region (111) being of opposite conductivity type.
7. Structure as in claim 1 further characterized in that said first (beneath 125 and 124), second (122), third (120), fourth (123), fifth (121), sixth (124) and seventh (125) regions are aligned colinearly.
8. Structure as defined in claim 1 further characterized by including a means (142) for making electrical contact to said fourth region (123).
9. Structure as in claim 1 further characterized by including a means for making electrical contact to said fifth region (121).
10. Structure as defined in claim 1 further characterized by including a second structure as defined in claim 8, including means for electrically interconnecting the second region (132) of said second structure and the fourth region (123) of said first structure, and means for electrically interconnecting the fifth region (131) of said second structure and the second region (122) of said first structure.
11. A structure as in claim 10 further characterized in that said fifth region (121) of said first structure and said fourth region (123) of said first structure are left unconnected.
12. Structure as in claim 11 further characterized by including means (143) for connecting said sixth region (134) of said second structure to said sixth region (124) of said first structure.
This is a division of application Ser. No. 720,467, filed Sept. 3, 1976 now U.S. Pat. No. 4,118,728.
1. Field of the Invention
This invention relates to semiconductor devices and in particular to integarted circuit structures.
2. Prior Art
Numerous techniques for electrically isolating semiconductor structures have been developed and are well-known in the art of semiconductor fabrication. See, for a list of papers describing such techniques, A. H. Agajanian's article entitled "A Biography of Semiconductor Device Isolation Techniques", Solid State Technology, April, 1975. Also well-known are methods of forming oxidized isolation regions in integrated circuit structures. For example, U.S. Pat. No. 3,648,125 entitled "Method of Fabricating Integrated Circuits with Oxidized Isolation and the Resulting Structure" issued Mar. 7, 1972, to Douglas L. Peltzer (hereinafter referred to as the Peltzer patent) discloses techniques for fabricating substantially smaller transistors, diodes, and resistors than the then existing prior art. In one such technique disclosed by the Peltzer patent, an epitaxial layer of silicon is formed on a silicon substrate and divided into electrically isolated pockets by a grid of oxidized regions of the silicon material in conjunction with a laterally extending PN isolation junction. Active and/or passive components such as diodes, transistors, and resistors may be formed in the electrically isolated pockets.
In the fabrication of vertical transistors according to the Peltzer patent and using a P type substrate and a P type epitaxial layer, a buried layer of N conductivity type semiconductor material (typically called a "buried collector region", "buried collector layer", or a "buried collector") formed in selected locations of the substrate and the epitaxial silicon layer may serve as a collector. In one embodiment, one or more emitters may then be formed in selected regions by diffusion or by otherwise introducing suitable N type impurities into the upper surface of the epitaxial silicon. The epitaxial silicon material beneath each emitter, but above the collector, functions as the base of the transistor. Ohmic contact to the buried collector regions may be achieved by diffusing, or otherwise inserting, a selected N type impurity into selected regions of the epitaxial silicon to convert these regions to the same conductivity type as the buried collector if the epitaxial layer is not already of the same conductivity type as the buried collector.
One problem arising in the manufacture of integrated circuits which utilize various embodiments of the oxide isolation techniques disclosed in the Peltzer patent and elsewhere is channel inversion or MOS channeling. Channel inversion may occur in oxide isolated integrated circuit structures between adjacent but noncontiguous N type buried collector regions. Usually occurring at the interface between the P type silicon and the overlying oxide, channel inversion results from a variety of causes, for example, from the presence of impurities in the oxide, typically sodium ions having a net positive charge which "mirror", or attract, electrons in the underlying P type silicon. If enough electrons are attracted, a very thin region of the P type silicon will be converted to N type semiconductor material, creating an N type channel between the adjacent buried collector regions. Channel inversion causes theoretically isolated collector regions to be effectively electrically connected to each other, thereby degrading or thwarting the function of the device and/or circuit. Channel inversion usually cannot be completely prevented by forming oxide of high purity, as only a few parts per billion of sodium impurity in the oxide may be sufficient to cause channel inversion in a lightly doped substrate.
Channel inversion has been frequently studied in conjunction with the manufacture of MOS transistors in which it is necessary to prevent unwanted leakage currents and to control threshold voltages. Three of the standard MOS techniques for preventing channel inversion are: (1) channel stops (which are heavily doped regions adjacent selected surfaces), (2) other forms of surface doping control, and (3) phosphorus gettering of sodium impurities in surface oxides.
One technique for preventing channel inversion is the formation of a guard ring surrounding selected regions of the integrated circuit structure. The guard ring is usually created by diffusing, or otherwise inserting, a selected impurity into desired locations of the semiconductor material thereby to create inversion-preventing regions of selected conductivity type and impurity concentration.
A further technique for preventing channel inversion has been employed by B. T. Murphy at Bell Laboratories, and is discussed in W. J. Evans et al, "Oxide Isolated Monolithic Technology and Applications", IEEE Journal of Solid-State Circuits, Vol. SC-8, No. 5, Oct. 1973. This reference discloses that after completely forming the oxide isolation for a given device, gallium is diffused through the oxide to strongly dope those regions of semiconductor material beneath the oxide, thereby preventing channel inversion by creating regions of opposite conductivity type to the buried collector regions.
U.S. Pat. No. 3,873,383 issued Mar. 25, 1975, on an application of Kooi and entitled "Integrated Circuits with Oxidation-Junction Isolation and Channel Stop" discloses a channel stop formed in an oxide-insolated integrated circuit structure. While Kooi discloses using a predeposition region to contact the substrate beneath the epitaxial layer in the absence of a buried collector region, Kooi fails to suggest or disclose the potential advantageous use of the channel stop region to provide a conductive buried region which conducts current in a lateral direction, and thereby makes possible a significant reduction in memory cell size.
In a copending application of Martin J. Alter entitled "A Method of Fabricating Conductive Buried Regions in Integrated Circuits and the Resulting Structures" filed on Sept. 3, 1976, having Ser. No. 720,550, and assigned to the same assignee (Fairchild Camera and Instrument Corporation) as this application, there is disclosed doped regions in oxide isolated integrated circuit structures which doped regions can be used to create novel collector sink bypasses, interleaved resistors, and resistors having a higher resistivity per unit length than resistors previously available. These doped regions are formed in epitaxial silicon material directly abutting the isolation oxide between the buried collector regions and the surface of the epitaxial layer. Alter calls these regions, when used as described in his specification, "conductive buried regions" or "walled resistors." Alter's conductive buried regions typically are annular-shaped and surround collector sinks, collector contact regions, and certain other oxide isolated structures. Alter uses the word "annular" in a much broader sense than conventional to refer to a closed path, sometimes a toroid, but more typically nontoroidal (such as, without limitation , rectangular) without regard to uniformity to cross-section. Alter refers to these annular-shaped conductive buried regions as being a portion of the region formed by what is commonly referred to in the semiconductor processing arts as a "field predeposition" step. The term "field predeposition", however, is not intended to limit the methods by which these conductive buried regions are formed. For example, diffusion, or any other suitable process, may be utilized to form these regions. The annular-shaped "conductive buried region" is located in the epitaxial layer and is electrically isolated from other regions formed by the field predeposition process when the oxide isolation or other insulating material is formed and extended to the buried collector region.
The size of the conductive buried region may be adjusted by varying the parameters of the process by which it is formed, and by varying the size of the collector sink, collector contact region, or other structure in which the conductive buried region is formed. In fact, in certain cases the conductive buried region can be eliminated completely by selected process changes. For example, suitable control of the etching of the epitaxial silicon prior to field oxide formation together with appropriately long thermal diffusion of the collector sink may totally eliminate the conductive buried region. That is, the impurity concentration of the conductive buried region is everywhere overcompensated by the impurity concentration of the collector sink. Prior to Alter's invention, this overcompensation was not necessarily undesirable.
In the formation of isolated pockets of epitaxial silicon in oxide isolated integrated circuit structures, after definition of the buried collector and the formation of the epitaxial silicon grooves or depressions are created in the epitaxial silicon where isolation regions are to be formed. The thereby exposed surface regions of epitaxial silicon are doped with an impurity selected to create in these surface regions a conductivity type opposite the conductivity type of the buried collector layer. After formation of the field oxide by oxidation of these exposed, doped surface regions of epitaxial silicon, significant amounts of the selected impurity remain in the regions of silicon material (either epitaxial or monocrystalline) directly adjacent the oxide.
In one embodiment of Alter's application, the substrate silicon semiconductor material is P type and the exposed surfaces of the grooves are doped with P type impurities and then oxidized to produce the field oxide. The field oxide is formed so as to contact the buried collector regions and thus isolate pockets of semiconductor material. Active and/or passive devices are formed in each of these pockets. Thus that portion of the conductive buried region above the buried layer is isolated electrically from the remaining portions of the silicon substrate material containing predominantly the selected P type impurity by the buried collector regions and the oxidized isolation regions (i.e., the field oxide). The conductive buried region in each pocket of semiconductor material will be directly adjacent the nonhorizontal portion of the field oxide. Each conductive buried region can comprise, and indeed sometimes will be referred to as a "walled" resistor, although, as disclosed by Alter, the conductive buried region can be utilized in many different ways not usually associated with the term "resistor," for example, as a sink bypass, or, in general, a conductor of electrical current. Numerous other structures may be fabricated with the conductive buried regions in which the substrate is either P or N type material, the epitaxial layer P or N type, and the impurity dopant P or N type. Particularly useful embodiments are those in which the buried collector is of chosen conductivity type, while the semiconductor substrate and conductive buried region are of opposite conductivity type.
The conductive buried region is typically electrically isolated from other portions of the region formed by the field predeposition step by the oxide isolation-buried collector interface. That is, the impurity dopant in that portion of the semiconductor surface which, when oxidized, diffuses into the buried collector and there is over-compensated by the impurity concentration of the buried collector. In other embodiments only selected portions of the conductive buried region will be isolated. In still further embodiments, for example, when an N type epitaxial layer is utilized with a P type field predeposition, or vice versa, formation of a collector sink is not necessary to electrically isolate the conductive buried region from the remainder of the epitaxial material.
In accordance with my invention, I make use of the conductive buried region to form a two transistor memory circuit in a compact arrangement in which, contrary to the prior art, the base, collector, emitters, and base resistors of each transistor are collinear (i.e., lie in the same straight line). A pair of two-emitter transistors, in memory cells, can therefore be formed within a region of the wafer substantially smaller than conventionally available memory cells which typically cannot be formed collinearly without consuming relatively large amounts of the wafer surface. Further, in one embodiment of this invention, the base pull up resistors of each of a pair of transistors in one memory cell have equal resistance.
In another embodiment of my invention, a compact junction field effect transistor is formed in which a pair of conductive buried regions or walled resistors function as the channel.
In further embodiments of my invention, the conductive buried region is utilized as an emitter or collector of a compactly-formed transistor. In this embodiment the epitaxial silicon layer functions as the base of a transistor while an additional region is formed at the surface of the epitaxial silicon to function as a collector or emitter as determined by the function of the conductive buried region.
FIGS. 1, 2, 3, 4, 4a, 4b and 5 illustrate a process by which the conductive buried regions used in my invention are formed, and one structure showing the conductive buried region.
FIGS. 6a and 6b depict plan and cross-sectional views of an embodiment of my invention which comprises a junction field effect transistor.
FIGS. 7a and 7b depict plan and cross-sectional views of an embodiment of my invention as a memory cell.
FIG. 8 is a circuit schematic of the structure shown in FIGS. 7a and 7b.
FIGS. 9a and 9b depict a semiconductor structure in which the conductive buried region may function as a collector or emitter of a transistor.
FIGS. 10a through 10d illustrate one method of manufacturing a sink region in accordance with this invention.
The semiconductor structure of this invention is fabricated utilizing the process depicted in FIGS. 1 through 5. The structure shown in FIG. 1 may be fabricated in the following well-known manner.
1. Oxidize P substrate 10.
2. Form an opening in the oxide (not shown in FIG. 1) and diffuse N type regions 11 which serve as buried collectors and isolation regions.
3. Remove the remaining oxide (not shown) and grow P type silicon epitaxial layer 12.
4. Thermally grow oxide layer 13, deposit silicon nitride layer 14, and mask both layers by conventional techniques.
5. Etch field isolation regions 15a and 15b.
In FIG. 2 a field predeposition region 20a and 20b of P+ type semiconductor material has been introduced into the exposed surfaces of epitaxial layer 12. This may be accomplished by diffusion or by any other suitable process. Note that the field predeposition does not penetrate the nitride and oxide layers 13 and 14 respectively and that the field predeposition regions are confined to those areas adjacent to the exposed epitaxial silicon surfaces. As has been discussed, one purpose of field predeposition 20 is to prevent channel inversion between adjacent buried collector regions, for example, between region 11 and the next adjoining buried collector region (not shown). The P+ type semiconductor material 20a and 20b increases the doping concentration at the surface regions of grooves 15a and 15b to prevent channel inversion after subsequent formation of the field oxide. Accordingly, the field predeposition region 20a and 20b is of differing conductivity from surrounding regions. For example, in some embodiments field predeposition region 20 will be of higher conductivity than adjacent semiconductor material, while in other embodiments it will be of different conductivity type. Other uses of the field predeposition are discussed below.
After formation of field oxide regions 30a and 30b according to well-known techniques, the appearance of a cross-section of the semiconductor structure is shown in FIG. 3. Because the volume of the silicon dioxide which typically comprises region 30a and 30b is greater than the volume of the epitaxial silicon 12 from which it is formed, the edges of silicon nitride layer 14 are lifted and a "bird-beak" shape is created similar to that depicted in FIG. 3. Because the field isolation region 30a and 30b is typically formed by a thermal oxidation process, a portion of the dopant in the P+ doped field predeposition region 20a and 20b diffuses into the epitaxial layer 12 ahead of the silicon dioxide-silicon interface 31a and 31b.
When a sufficient amount of oxide has been formed to extend through the epitaxial layer 12 to contact buried collector region 11, a portion 32a and 32b of the field predeposition region will usually be electrically isolated from the remainder of the field predeposition region 20a and 20b. The isolated portion 32a and 32b of the field predeposition region will be primarily adjacent to the nonhorizontal portion of the silicon dioxide-epitaxial silicon interface 31a and 31b. As previously discussed, the isolated portion 32a and 32b of the field predeposition region will be referred to as a conductive buried region, or in some embodiments as a "walled" resistor or a "sink by-pass resistor."
The conductive buried region 32a and 32b usually will be electrically isolated from other portions of the field predeposition region 20a and 20b by the field oxide-buried collector interface 33a and 33b. This electrical isolation occurs because the impurity concentration of the buried collector region 11 overcompensates the impurity concentration of field predeposition region 20a and 20b in those regions 33a and 33b where regions 20a and 20b intersect the buried collector 11. The resistance per unit length of the conductive buried region 32a and 32b may be controlled by the concentration and depth of the field predeposition region, the epitaxial thickness, and by the extent to which a collector sink, if formed, encroaches upon the field predeposition region. In other embodiments, the conductive buried region may be electrically isolated without forming a buried collector 11 by selecting appropriate conductivity type materials, for example, use of a chosen conductivity type material for the substrate and an opposite conductivity type material for the field predeposition region. For example, a heavily doped N+ substrate can have formed on it a more lightly doped P type or N type epitaxial layer. If the epitaxial layer is N type, a P type predeposition region can be formed on the surfaces of grooves formed in the epitaxial layer with such a concentration that the dopant in the N+ substrate over-compensates the P type dopant in the substrate while the P type dopant overcompensates the N type dopant in the epitaxial layer. The result is to form walled resistors or conductive buried regions in the epitaxial semiconductor material. If the epitaxial layer is P type, an N type imputity can be placed in the epitaxial layer in such a manner as to leave P type walled resistors or conductive buried regions formed from a P type predeposition region. Of course, similar structures may be built with all conductivity types reversed.
In one embodiment of this invention silicon nitride layer 14 is then removed from those portions of the wafer surface where collector sink depositions are desired. Following this partial removal of silicon nitride layer 14, the appearance of a plan view of the structure is shown in FIG. 4. Note that field isolation region 30a, 30b, 30c and 30d completely surrounds the perimeter of electrically isolated pocket 40. The perimeter of buried collector 11 is indicated on FIG. 4 by a dashed line. FIG. 4 also depicts the appearance of the wafer surface following formation of a collector sink 41. Collector sink 41 will usually be formed by predeposition and diffusion of N type semiconductor material, although other well-known processes may also be used.
With appropriately controlled etching and thermal diffusion processes, the N type impurity which forms collector sink 41 for contact to buried collector 11, will not penetrate into the perimeter of epitaxial layer 12 immediately above buried layer 11. This effect is shown in FIG. 4a; see regions 32a and 12a.
Because of the above described phenomenon, conductive buried regions 32a and 32b (see FIGS. 4, 4a and 4b) are not overcompensated by the impurity used to control the conductivity type of collector sink 41. Accordingly, conductive buried regions 32a and 32b provide an electrically isolated conducting path between regions 12c and 12d which are disposed on opposite sides of collector sink 41. This embodiment of conductive buried regions 32a and 32b which provides a conducting path around the collector sink 41 will be referred to herein as a collector sink bypass. In certain embodiments formed by various processing techniques in which the epitaxial layer 12 and the conductive buried region 32 are the same conductivity type and in which a collector sink 41 of opposite conductivity type is formed in the epitaxial silicon 12, a small portion of epitaxial silicon 12a (FIGS. 4a and 4B) of the same conductivity type as the conductive buried region may remain after the sink 41 is formed. In such circumstances the conductive buried region 32a, together with the small portion of epitaxial silicon 12a, serves as the collector sink bypass. The relative electrical currents carried by the epitaxial silicon 12a and the conductive buried region 32a will be in part determined by their relative impurity concentrations and cross-sectional areas. In general, however, the major portion of the current will be carried by the conductive buried region 32a.
The conductive buried region may be fabricated in embodiments having a wide range of shapes and dimensions. For example, a collector sink junction depth of 1.5 microns and an oxide isolation depth of 1.8 microns have been found to produce suitable results and can be achieved by a variety of combinations of process parameters.
FIG. 4a shows a cross-section of the wafer shown in FIG. 4, together with conductive buried region or collector sink bypass 32a, field oxide isolation region 30a, 30b, 30c and 30 d, buried collector 11, and field predeposition region 20a and 20d. An additional collector sink bypass (32b) will also be present at the opposite end of collector sink 41 from collector sink bypass 32a. This additional collector sink bypass (32b) is not shown in FIG. 4a. Silicon nitride layer 14 is not shown in FIG. 4a, but if shown would overlie regions 12c and 12d. An enlarged view of a portion of FIG. 4a is shown in FIG. 4b.
The semiconductor structure shown in FIGS. 4 and 4a may be subjected to various well-known semiconductor manufacturing processes to obtain the structure shown in FIG. 5. For example, the structure shown in FIG. 5 may be obtained from that shown in FIG. 4 by the following steps:
1. In a well-known manner remove silicon nitride layer 14 from regions 12c and 12d.
2. Perform base predeposition and diffusion thereby forming regions 50a and 50b.
3. Form oxide layer 51.
4. Form an opening in oxide layer 51 for forming emitter region 52, also reopening collector sink contact region 41.
5. Perform the emitter diffusion.
6. Form washed emitter 52 and its equivalent in region 50b.
7. Form contact opening 53a in layer 51 for electrical contact to P+ region 50a.
8. Deposit metal interconnect layer and form desired interconnect pattern (not shown). Typically, aluminum-siliconor its equivalent is employed when washed emitters have been formed. (The results of this step are not shown in FIG. 5).
The conductive buried region allows electrical contact to base region 50b to be made at region 50a, as regions 50a and 50b are electrically connected by conductive buried regions 32a, and 32b (shown in FIG. 4).
One embodiment of this invention wherein the field predeposition region functions as the channel of a junction field effect transistor is shown in FIGS. 6a and 6b. Junction field effect transistors are well-known in the semiconductor arts; e.g., see A. S. Grove, Physics and Technology of Semiconductor Devices, Wiley and Sons, 1967.
The semiconductor structure shown in FIGS. 6a and 6b may be formed in the manner described in conjunction with FIGS. 1-5. Of course, as shown in FIGS. 6a and 6b, the P type source and drain regions 102 and 103 are formed adjacent N type sink region 104. Field predeposition region serves as the channel of the junction field effect transistor, region 102 as the source, region 103 as the drain, sink 104 and buried collector or portions of semiconductor material beneath the laterally extending PN isolation junction as the gate, and field oxide 107 and buried layer 105 as electrical isolation from surrounding regions of substrate 101. As with other junction field effect transistors, channel modulation is achieved by applying bias across the PN junction between the gate and the channel. Source 102 and drain 103 are formed in any well-known manner, e.g., by impurity diffusion or ion implantation. Electrical connections are made to source 102 and drain 103 by forming ohmic contacts to the upper surface of source region 102 and drain region 103.
Another embodiment of this invention is depicted in FIGS. 7a, 7b and 8. Shown in FIG. 7a is a plan view of a memory cell wherein a pair of collinear two emitter transistors are disposed parallel to each other and electrically connected. A cross-sectional view of the structure shown in FIG. 7a appears as FIG. 7b. Because the cross-sectional view for each of the pair of two emitter transistors shown in FIG. 7a is identical except for metal contacts, the structure shown in FIG. 7b is representative of two different cross-sections taken through the structure shown in FIG. 7a. The numbers in brackets in FIG. 7b are used to denote the regions intersected by the cross-section designated [FIG. 7b] in FIG. 7a. For example, the cross-section designated FIG. 7b in FIG. 7a passes through emitter 124, while the cross-section designated [FIG. 7b] passes through a corresponding emitter 134, denoted in FIG. 7b as [134].
Because no metal contact is formed on sink 133, "(none)" appears in FIG. 7b over "142," the reference numeral for the contact formed on sink 123. Also because no metal contact is formed on sink 121 while contact 41 is formed on sink 131, "(141)" appears above "None" in FIG. 7b.
The memory circuit shown in FIGS. 7a and 7b occupies a substantially smaller fraction of the wafer surface than prior art devices. Further, the compact rectangular arrangement of ohmic contacts to the various active and passive regions of the structure facilitates higher packing densities than with the asymmetrical geometric arrangements associated with devices heretofore available. Also, unlike other memory circuits utilizing conductive buried regions, the resistances associated with the bases of the two transistors are equal. This symmetry of resistances associated with each of the two transistors as reflected by the schematic of FIG. 8 allows fabrication of large arrays of individual memory cells as depicted in FIG. 7a without the necessity of additional compensating circuitry. Compensating circuitry is ordinarily required in conjunction with large arrays of nonsymmetrical memory cells, that is, memory cells in which the resistances associated with one transistor of the cell are not identical to those associated with the other transistor of the cell. The symmetrical resistances result from the particular structure shown in FIGS. 7a and 7b, and, in particular, from the formation of two collector sinks in each of the two transistor structures, which two transistor structures suitably interconnected form a single memory cell.
The transistor structures shown in FIGS. 7a and 7b may be fabricated according to the method set forth herein in conjunction with FIGS. 1-5. For example, metal interconnections 140, 141, 142, 143, 144 and 145 may be formed by depositing and masking of suitable electrically conductive material. Metal interconnections 140, 143, 144 and 145 can be utilized to electrically interconnect large arrays of the individual semiconductor structure depicted. In FIGS. 7a and 7b, active and passive semiconductor devices are formed, within the perimeter of the two electrically isolated silicon pockets 113 and 114. The buried collectors 111, 112 and field oxide isolation 115 are also shown.
Emitters 124, 125, 134, 135 and emitter metalization 143, 144, 145 are designated, together with metal interconnect 143 between emitter 124 and emitter 134. (Note that contact metal and metal interconnects are part of the same metal layer.) Conductive buried regions 150, 151, 160, 161, which provide electrical connections around the collector sinks, are shown as dotted lines in collector sinks 121, 123, 131, 133. Regions 120, 122, 130, 132 are openings in the oxide layer to provide ohmic contact to P type resistors and base regions, and metal interconnects 140, 141, 142 between them are also shown.
The various aspects of the structure shown in FIGS. 7a and 7b are given identical designations in the circuit schematic of FIG. 8. For example, the resistance between regions 130 and 132 is designated 130-132 in FIG. 8. Similarly, the electrically conductive material 143 in FIG. 7a is shown as connection 143 in FIG. 8. Also shown in FIG. 8 are the two diodes 170, 171 representative of the junction between epitaxial silicon pocket 113 and buried layer 111 and between pocket 114 and layer 112, respectively. Resistors 130-132, 132-134 and 134-135 are in the epitaxial layer and typically are on the order of 5 K to 20 K ohms. Resistors 131-134 and 134'-135' are in the buried layer 112 and typically are on the order of 100 to 300 ohms. Likewise resistors 120-122, 122-124 and 124-125 are in the epitaxial layer and typically are on the order of 5 K to 20 K ohms. Resistors 123-124 and 124'-125' are in the buried layer 111 and are on the order of 100 to 300 ohms. The resistors in the buried layers in the two cells are not exactly symmetrical but because of their low values, this lack of symmetry is not important to the performance of the circuit and the circuit behaves as though the cell is substantially symmetrical.
The cell shown in FIGS. 7a and 7b is designed to be electrically interconnected with other such cells in the same column by a second layer of metalization formed in a well-known manner. It is interconnected with such cells in the same row by portions 143 and 140 of the first layer metalization.
FIG. 8 also displays one substantial advantage achieved by this invention--the symmetrical resistances associated with each of the transistor structures. Accordingly, it is unnecessary to provide any circuitry to compensate for differences in the resistances associated with the bases and collectors of the two transistor structures. The compact memory cell design depicted in FIGS. 7a and 7b results from this invention. With this invention conductive buried regions 150, 151, 160 and 161 provide bypasses for collector sinks respectively designated 121, 123, 131, and 133. In prior art memory cells, it was necessary to locate collector sinks such as 121, 123, 131, and 133 non-collinearly from the bases and emitters, since no conductive buried regions were utilized. In particular, prior art devices provided greater separation between electrically isolated pockets 113 and 114 so that the necessary collector sinks could be disposed between them, with the shape of the perimeters 113 and 114 altered accordingly. One such structure is depicted in W. D. Baker and D. A. Laws, "The Isoplanar Process", Fairchild Semiconductor Advertising Brochure, October, 1971.
FIGS. 9a and 9b show another embodiment of the structure of this invention. In the manner previously described herein in conjunction with FIGS. 1-5, or utilizing other well-known processes, a semiconductor structure 190 is formed which includes a semiconductor substrate 191, a buried layer 192, an epitaxial pocket 193a and 193b, oxide isolation 194a and 194b, field predeposition region 195a and 195b, and conductive buried regions 196a and 196b (which are those portions of the field predeposition regions in the epitaxial layer). Into the epitaxial pocket 193 is introduced a base region 197 and collector or emitter 198. If substrate 191 is P type material, then buried layer 192 and base 197 will be N type, while epitaxial pocket 193 will be of either conductivity type, while conductive buried region 196 and region 198 will all be P type material. If epitaxial layer 197 is N type, this N type material can form the base of the transistor. Depending upon the electrical connections made to structure 190, conductive buried region 196 will function as either the collector or emitter of the transistor formed in pocket 193. If a conductive buried region 196 functions as an emitter than region 198 will be a collector, while if conductive buried region 196 is a collector, then region 198 will be an emitter. The structure of FIGS. 9a and 9b is particularly useful because a pair of collector or emitter connected highly compact transistor structures are formed. FIG. 9b more clearly depicts a portion of the structure shown in FIG. 9a.
In any of the above discussed application or embodiments, the cross-sectional dimensions of the conductive buried layer or walled resistor formed according to this invention are largely independent of optical masking technology. The width of the conductive buried region, as measured from the buried collector upward along the field oxide wall, is controlled by the thickness of the epitaxial layer. The thickness of the conductive buried region, as measured perpendicular to the oxide wall, may be controlled by varying the depth and concentration of the field predeposition and the collector sink diffusion. Note that the structures with which this invention is particularly useful have walled emitters to obtain minimum area per cell and this invention is particularly useful with such emitters.
Although the structure of this invention has been discussed in conjunction with specific conductivity type materials, opposite conductivity type semiconductor materials may be substituted for those specified in each embodiment. For example, an N type epitaxial layer may be formed rather than the P type layer described, and the conductivity types of all other regions of the semiconductor structure suitably altered, although in some embodiments the conductivity type of only selected regions need be changed. Additionally, the conductive buried region of this invention may be formed without a collector sink by forming the conductive buried region in an epitaxial layer of opposite conductivity type to the field predeposition. Further, while certain embodiments of this invention have been described herein, other related structures and processes will be obvious in view of this disclosure.
FIGS. 10a through 10d illustrate one process of manufacturing my invention embodying a unique method of self-aligning the source and drain regions with the diffused gate region of the junction field-effect transistor shown, for example, in FIGS. 6a and 6b. FIG. 10a shows a cross-section of a semiconductor structure containing a pocket 19 of semiconductor material the lateral dimensions of which are determined by oxidized regions of semiconductor material 18a, 18b extending through the semiconductor material to a laterally-extending PN isolation junction (in FIG. 10a, represented by the junction between buried region 20 of a first conductivity type and underlying substrate 12 of a second and opposite conductivity type). Pocket 19 is also of opposite conductivity type. Overlying pocket 19 and in fact comprising an extension of oxide 18a and 18b is a thin oxide layer 18c. Oxide 18c covers the top surface of semiconductor pocket 19. Overlying oxide layer 18c is a layer of a second insulation 14, typically silicon nitride. The cross-section of the structure shown in FIG. 10a is well known and for example is shown in the above-cited Peltzer U.S. Pat. No. 3,648,125.
My invention turns to advantage the silicon nitride oxide insulation formed over pocket 19 to provide a unique process which yields a junction field-effect transistor with a diffused gate region self-aligned with the source and drain regions. To do this, a window 15 is formed by suitable masking and etching steps in the composite insulation layer 14 and 18c. Preferably, the window is located in the middle of this layer to ensure symmetry between the source and drain regions of the to-be-formed junction field-effect transistor but window 15 can, of course, assume any location appropriate for the characteristics of the desired junction field-effect transistor. Following the formation of window 15, an N type dopant is diffused or otherwise placed in the semiconductor material left exposed by window 15. The resulting N type region 19a is shown in FIG. 10c and extends into contact with buried layer 20. Simultaneously with, or following, the formation of region 19a, oxide 16 is formed upon the surface of the exposed semiconductor material in pocket 19. Oxide 16 is purposely grown thicker than the oxide layer 18c, as shown in FIG. 10c. Next, windows 17a and 17b (FIG. 10d) are opened in nitride layers 14a, 14b and the underlying remaining portions of oxide layer 18c to expose the P type regions 19b and 19c which comprise the source and drain regions, for example of the junction field-effect transistor.
The self-aligned feature is achieved by exposing region 16 to the same etching media as used to open windows 17a and 17b. For properly selected etching media (for example hot phosphoric acid to remove nitride layers 14a and 14b and buffered hydrofloric acid to remove the selected portions of oxide layer 18c), oxide thicknesses, and etch times, the nitride layers 14a and 14b and the oxide layers 18c can be completely removed and still leave enough of oxide layer 16 to mask against the subsequent P+ diffusion into regions 17a and 17b as shown in FIG. 10d. Typically, oxide layer 16 may be two to four thousand angstroms thick while 18c is a few hundred angstroms thick.
As described above in conjunction with the detailed description of the conductive buried regions, the formation of region 19a takes place under conditions such that a conductive buried region 19d remains between the lower portions of region 19a and the adjacent oxide 18. Conductive buried region 19d and its counterpart (not shown in FIGS. 10c and 10d) serve as the conductive channel between the source and drain regions of the junction FET. This channel can, of course, be pinched off by application of proper voltage to the gate comprising region 19a and the underlying buried layer 20. In typical embodiments, a potential difference of two volts between the gate and the channel region piches off the channel region.
In the operation of the junction field-effect transistor of this invention, a positive potential relative to P type regions 19b, 19c is applied to the gate regions 19a and 20 thereby to back-bias the PN junctions formed between the gate regions and source 19b, drain 19c and conductive channel 19d. The application of an increasingly positive voltage to region 19a relative to regions 19b, 19c and 19d results in the depletion of holes from region 19d thereby varying its conductivity.
FIG. 10d shows the way in which contacts are formed to the source and drain regions 19b, 19c by the formation of windows 17a and 17b in silicon nitride 14a, 14b and underlying oxide 18. In addition, additional P type impurities can be diffused through windows 17a and 17b if desired to form contact regions to the top surfaces of these regions or alternatively to form P type source and drain regions. A particular case of interest is one in which the semiconductor pocket is of N type silicon material rather than P type silicon material. In this situation, the conductive buried region extends directly adjacent to the oxide regions 18a, 18b into contact with the diffused or otherwise formed P type regions 17a and 17b.
In typical embodiments, pocket 19 is formed of epitaxial silicon material formed on substrate 20 in a manner well known in the semiconductor arts.
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To modify a reservation, please key in your last name and booking confirmation number below.
Stay minimum four nights or more with us and enjoy greater savings.
Sample a Suite and enjoy your privileges.
Find the ideal venue for your celebration from our selection of ballrooms and function rooms.
Hailing from the award-winning Si Chuan Dou Hua in Singapore, Chef Peng's culinary showcase marks the launch of Si Chuan Dou Hua's Dim Sum Feast, comprising a mouth-watering repertoire of 58 items.
Be spoilt with a selection of 78 dishes for RM78 per person.
Share the excitement of watching the live telecast of 2015 F1 Petronas Malaysia Grand Prix with us at Klix Lounge.
Experience the 'Luxurious Steps' and 'Sweet Retreat' treatments at St. Gregory to refresh and rejuvenate yourself.
Our traditional dish of the 'Beijing Roasted Duck' is roasted to perfection and prepared in seven different ways for a three-course meal.
A showcase of Malaysia's most extensive spread of seafood and meat cooked in your preferred style.


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- 5 bedrooms
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Bedrooms: 5
Bathrooms: 3
Sleeps: 12
Type: House1208 Palmetto Blvd - "Ocean Villa #2"
Description from the manager
5 BR / 3BA (K, 2Q, 6S) -Sleeps 12 - 2nd Floor large unit in the Ocean Villa complex - Enjoy the ocean breezes sitting on the sundeck overlooking the Atlantic Ocean.The living and dining areas are centrally located in this home.The dining table will seat 14. The kitchen is off to the side at the back .The washer/dryer is located in the kitchen. There is a bath adjacent to the dining with a separate shower and jacuzzi tub. There are 3 bedrooms on the left side of the great room. The bedroom at the back has a king size bed and a single. The middle bedroom enters from a short hallway and has a queen size bed. There is a full hall bath next to this...Read more
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Edisto Sales and Rentals Realty LLC
Edisto Sales and Rentals Realty LLC
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Mark Volpe is the Managing Director of The Boston Symphony Orchestra. He joins us to talk about how the year has been and about this year's Tanglewood season schedule.
In this week's Classical Music According to Yehuda, Alan Chartock and Yehuda Hanani discuss Fraz Schubert.
Music - Gretchen am Spinnrade from Faust
The Boston Early Music Festival (BEMF) will return to the Berkshires this summer with Almira, the first opera by the celebrated and beloved Baroque composer, George Frideric Handel in its first modern-day historically conceived production.
BEMF will offer three fully-staged performances of the production at the Mahaiwe Performing Arts Center on Friday and Saturday, June 21 and 22 at 7pm, and Sunday, June 23 at 2:30pm; all performances will be sung in German with English supertitles.
Three-time Grammy-nominated Artistic Co-Director Paul O'Dette joins us.
On the evening of Saturday, June 15, the Berkshire Bach Society will present violinist Joe Silverstein in concert for a celebratory event in honor of his 80th birthday.
Contemporary Hawaiian composer Jerre Tanner parodies Bach's Coffee Cantata in the Kona Coffee Contata - a hilarious and charming voice and chamber orchestra piece. The presentation by the Musicians of Ma'alwyck - on June 7 at the First Reformed Church in Schenectady, NY - will be semi-staged and feature vocalists Tim Reno and Sabrina Manna with a ten-piece ensemble directed from the keyboard by Tom Savoy.
They've partnered with Ambition, The Daily Grind, and Liquid Assets who will provide coffee for the event.
When Igor Stravinsky's work "The Rite of Spring" made its debut in Paris on May 29, 1913, it was called by some one of the most scandalous events in music history. So much so that the theater erupted in a riot. Fast forward 100 years to this coming Wednesday, 100 years to the day since that debut, when the work will be performed in a new arraignment by The Five Browns at the Arthur Zankel Music Center at Skidmore College.
In this week's Classical Music According to Yehuda, Alan Chartock and Yehuda Hanani discuss playing music in a time of crisis.
To learn about Yehuda's Close Encounters with Music Series in Great Barrington visit cewm.org.
Each year in May, my synagogue hosts the Albany Symphony Orchestra's Tiny Tots concert series for preschool, kindergarten and first grade students from across the capital region. Over three days, Maestro David Allan Miller, the ASO's beloved conductor, demonstrates his passion for classical music and his devotion to educating young people with a varied program of famous pieces that engage kids and their teachers in serious fun. Dressed, as always, as the irrepressible Cowboy Dave, he and members of the orchestra lead students on a wild musical adventure of the imagination, along with a
The Octavo Singers of Schenectady is an 80-year-old community chorus of about 100 singers. The group was founded by the Schenectady Recreation Department with WPA funds during The Great Depression.
The Albany Symphony Orchestra returns to Carnegie Hall on May 7th. But, they will be giving a sneak preview tomorrow night at the Palace Theatre in Albany. Their Carnegie Hall Preview is an all-American program celebrating the infusion of jazz in orchestral music – featuring Gershwin, Gould and Harbison – with Kevin Cole on piano.
Lets face it, the ASO is one of the finest orchestras in the country led by one of the nation's finest conductors – Maestro David Alan Miller.


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The CALIFORNIA ASSOCIATION OF REALTORS® Finance Helpline is a FREE C.A.R. member benefit, providing both answers and assistance in moving your stalled transactions forward. The Finance Helpline provides you with invaluable one-on-one assistance with short sales, funding, REOs, deeds in lieu, and other financing questions or issues.
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- Jamie Magazine
Gardening illustrations for Jamie Oliver's UK magazine.
- Being a lifelong lover of food and cooking, it's been a real thrill to contribute some artwork to issues of Jamie Magazine. I've been working on the recurring gardening column for Jamie-- these are selected spots from the past few years, with more to come!


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Based on 5 reviews
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Excellent attorney. Knows her way around the courthouse like her own office. Forms were perfect and ready to go. Cheryl handles herself with utmost professionalism. Employees at the court recognize this and treat her with respect. We were taken care of immediately and our order was returned promptly with everything we asked for. Overall Cheryl's mannerisms and concern for her clients are somehow comforting even faced with the situation at hand. I highly recommend Cheryl Faas for your legal needs, you will not be disappointed.
All I can say is I have worked with a 3 other child custody lawyers and hands down Cheryl was the best. She was always very professional, and honest. I never felt that she led me to believe anything that was not true to her belief. I wanted her to be supportive and honest. She would also tell me if she thought I was wrong or going about it wrong. I appreciated that. She always returned calls and emails in a timely manor. When we showed of for trial, I was delightfully surprised with the prepared ness of her and her document for court. She did a great job representing me and my daughter. I will use her again (because I will be in court again and again), and recommend her to anybody and everybody I can.
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I could spend countless hours explaining the problems having Cheryl as my counsel. In short she caused more problems for me than the opposing party, amazingly ineffective, complete lack of detail, corrupt charges, depending on the day she may quit on you then act like she's all in favor the next???etc....etc....etc... The only interest Cheryl will have in your legal assistance is herself.
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This author's review is extremely disappointing. I have never "quit" on any of my clients. I strive to treat each one of my cases as if it were my only one. An unfortunate part of family practice is that there is rarely a "winner" when the case is over. No matter how well we do in court or in settlement negotiations, both parties lose something whether it be money, time with their kids or their relationship with the other spouse. Divorce is tough, and I understand that some clients may be frustrated when they don't end up with everything they wanted. But the allegations made by this author are unfair and untrue. I am experienced, knowledgable and take a personal interest in each one of my clients. I advocate for my clients as if they were my own family.
It is important to note that quitting versus withdrawing from representation for nonpayment of fees, are two completely different actions. On rare occasions I have needed to withdraw from a case because a client was unable to fulfill their end of the client services agreement. Withdrawing for this reason is one of the hardest parts of my job, but it would not be fair to my firm, my staff or my own family if I didn't collect fees for the services I render. I suspect this is what happened with this author's case.
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Posted about 2 years ago. Flag
I used Ms. Cheryl Faas as my attorney throughout my more than difficult divorce, with a less than cooperative spouse. Her professional advice as well as her superb representation throughout the divorce proceedings and trial for that matter has given me the best outcome possible for my divorce case. I am glad to have found Ms. Faas who has really been great throughout this difficult time in my life.
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I could not have asked for a better attorney. A highly satisfied client


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Travis Wear
Wear (left) during his college career at UCLA
|No. 6 – New York Knicks
|Personal information
September 21, 1990
Long Beach, California
|Listed height
|6 ft 10 in (2.08 m)
|Listed weight
|230 lb (104 kg)
|Career information
|High school
|Mater Dei (Santa Ana, California)
|North Carolina (2009–2010)
|NBA draft
|2014 / Undrafted
|Pro career
|Career history
|New York Knicks
|Career highlights and awards
|Stats at NBA.com
|Stats at Basketball-Reference.com
Travis James Wear (born September 21, 1990) is an American professional basketball player who currently plays for the New York Knicks of the National Basketball Association (NBA). He played college basketball for the North Carolina Tar Heels and the UCLA Bruins. As a high school athlete, Wear was selected to participate in the 2009 McDonald's All-American Game and played on the 2008 silver medal winning USA Basketball U-18 team at the FIBA U-18 championship tournament.
High school career[edit]
Wear attended Mater Dei High School in Santa Ana, California where he was a two-time California Interscholastic Federation State champion in 2007 and 2008. As a junior, he averaged 16.1 points and 8.3 rebounds per game. As a senior, he averaged 14.9 points and 6.4 rebounds per game.[1]
Considered a four-star recruit by Rivals.com, Wear was listed as the No. 17 power forward and the No. 60 player in the nation in 2009.[2]
College career[edit]
North Carolina[edit]
Wear and his twin brother, David, played for the defending national champion North Carolina Tar Heels in their freshman year.[3] Wear contributed 3.5 points and 2.2 rebounds a game while averaging over 10 minutes per game.[4] The Tar Heels missed the National Collegiate Athletic Association (NCAA) tournament, which upset their fans. Wear said playing for North Carolina "wasn't what [he] thought it would be."[3] The twin brothers transferred after the season in May 2010 to UCLA. They redshirted the following season due to NCAA transfer rules.[4]
In his first season playing for UCLA in 2011–12, Wear played in 30 games with 24 starts, and averaged 26.2 minutes per game and finished second on the team in points per game (11.5) and rebounds per game (5.9). He had a career-high 13 rebounds in a loss against St. John's on February 5, 2012. In 2012–13, he started in 31 of his 32 games, and averaged 10.9 points and 5.2 rebounds in 28.9 minutes. He scored a career-high 23 points in a win at Colorado on January 12, 2013.[1] UCLA won the Pacific-12 Conference championship that season. However, UCLA coach Ben Howland was fired after the season, prompting Wear and his brother to consider transferring. After meeting with incoming coach Steve Alford, the brothers were convinced they fit as starters in the new coach's system.[3]
Wear missed the first three games of 2013–14 after he had an appendectomy on October 28, 2013. He came off the bench in his first six games before returning to the starting lineup. He was ninth in the Pac-12 in field goal percentage (53.0), and shot 44% on three-point field goals—including 10 of 19 in his final 16 games. He scored a season-high 16 points on 8-for-8 shooting in UCLA's win over Stanford in the Pac-12 Tournament semifinals.[1] At the team's annual banquet at the end of the season, Wear was presented with the Elvin C. Ducky Drake Memorial Award as the team member who exhibits tremendous competitive spirit, inspiration and unselfish contributions. He graduated after the season.[5]
Professional career[edit]
New York Knicks (2014–present)[edit]
Wear thought he had a chance to be selected in the second round of the 2014 NBA draft, but he went undrafted.[6] He played for the Atlanta Hawks in the 2014 NBA Summer League, [7] and was signed by the New York Knicks on September 9, 2014.[8] The Knicks' roster already had 15 players with guaranteed contracts, and Wear was a longshot to make the team.[6] However, they opened a roster spot for Wear by trading Travis Outlaw. Knicks president Phil Jackson said Wear was "overshadowed at UCLA but has the skill set to play every position from 1 to 4." He added that the team planned to have Wear play in the NBA Development League, "where his possible NBA future solely depends on his ability to learn how to defend."[9] The Knicks lost their 2014–15 season opener in a 104–80 blowout to the Chicago Bulls, but Wear made his pro debut in the fourth quarter with the game already decided.[10] The following night against the Cleveland Cavaliers, he played 13 minutes in a 95–90 win, and held LeBron James to 0-for-4 shooting when he was the primary defender on James.[11]
Wear is the son of David Sr. and Gloria Wear. His father played college basketball at Fresno State and Cal State Fullerton and professionally overseas.[1] Wear's favorite basketball player of all time is Earvin "Magic" Johnson. His twin brother, David, currently plays for the Reno Bighorns.
- ^ a b c d "#24 Travis Wear". uclabruins.com. Retrieved September 5, 2014.
- ^ Travis Wear Recruiting Profile
- ^ a b c Foster, Chris (March 2, 2014). "UCLA's twin Wear brothers near the end of their identical act". Los Angeles Times. Archived from the original on September 10, 2014.
- ^ a b Markazi, Arash; Leung, Diamond (May 25, 2010). "Wear twins transferring to UCLA". ESPN.com. Archived from the original on April 26, 2011.
- ^ "UCLA Looks Forward to Thursday Evening's NBA Draft". uclabruins.com. June 24, 2014. Retrieved June 27, 2014.
- ^ a b Berman, Marc (October 27, 2014). "Travis Wear came out of nowhere to win final Knicks roster spot". New York Post. Archived from the original on October 27, 2014.
- ^ 2014 Atlanta Hawks Summer League Roster
- ^ Knicks Sign Langston Galloway and Travis Wear
- ^ Stein, Marc (October 27, 2014). "Knicks send Travis Outlaw to 76ers". ESPN.com. Archived from the original on October 27, 2014.
- ^ Berman, Marc (October 29, 2014). "Knicks 'not ready for showtime' in opening rout by Bulls". New York Post. Archived from the original on October 31, 2014.
- ^ "Stats to know: Unhappy return for James". ESPN.com. October 30, 2014. Archived from the original on October 31, 2014.
External links[edit]
|Wikimedia Commons has media related to Travis Wear.
- Career statistics and player information from NBA.com, or Basketball-Reference.com
- OCVarsity.com Profile
- UCLA bio
- The Wear Twins Story on YouTube
- 1990 births
- Living people
- Basketball players from California
- McDonald's High School All-Americans
- New York Knicks players
- North Carolina Tar Heels men's basketball players
- Parade High School All-Americans (boys' basketball)
- Sportspeople from Long Beach, California
- Twin people from the United States
- Twin sportspeople
- UCLA Bruins men's basketball players
- Undrafted National Basketball Association players


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Yves Saint Laurent
Face & Eye Duo
|Item # 969658
Yves Saint Laurent Face and Eye duo helps you achieve a youthful complexion.
Duo includes:
- Deluxe sample Forever Youth Liberator serum: a serum formulated to reduce the appearance of fine lines and wrinkles.
- Touche Èclat Radiant Touch in Luminous Ivory: an award-winning highlighter that eliminates dark circles and signs of fatigue, leaving your skin as radiant as ever.
- By Yves Saint Laurent.


text:
Michelia tub sizes
adamharbeck(WA Aust)April 25, 2009
Hello Forum,
I have just purchased my first home and I am planning on establishing a fragrant subtropical garden around the outdoor living areas. I have already purchased a number of fragrant roses, rock orchids, gingers, plumeria, citrus, stephanotis as well as 8 magolias/michelias.
I have M. figo, M. "coco", M. "lady of th night" and Magnolia dianica (M. Yunnanensis) and Magnolia Little Gem, all of which are in 12" black plastic pots.Because of our alkaline sandy soild, I have reisgned to grow the magnolias in large tubs. My question is, how large should these be? They are currently all in 12" black plastic pots.


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Max. size
610 cm TL (male/unsexed; (Ref. 244)); max. published weight: 449.5 kg (Ref. 40637)
- Compagno, L.J.V. 1984 FAO Species Catalogue. Vol. 4. Sharks of the world. An annotated and illustrated catalogue of shark species known to date. Part 2 - Carcharhiniformes. FAO Fish. Synop. 125(4/2):251-655. Rome: FAO. (Ref. 244)
- IGFA 2001 Database of IGFA angling records until 2001. IGFA, Fort Lauderdale, USA. (Ref. 40637)
Latest updates
No one has provided updates yet.


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$75 for 1 Hour Full Body Massage of Your Choice + Quantum Magnetic Evaluation ($150 Value)
Body and Soul Touch
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Boise (Idaho) State University is promoting its month-long "One Less Car" campaign, encouraging students, faculty and staff to take proactive measures to reduce the university's carbon footprint.
The "One Less Car" campaign runs from April 5 to May 7 for students and May 1 to 31 for employees.
The campaign is a friendly competition between students and employees, sponsored by the Transportation and Parking department. The goal is to get as many campus commuters as possible to carpool, ride the ValleyRide bus (a service of Valley Regional Transit), bike, walk or utilize some other form of transportation beyond a single occupant vehicle for an entire month.
In addition to the incentives of cleaner air, reducing traffic and saving money, participants may enter a drawing for various prizes. The university has made available a calendar for participants to record their alternative transportation efforts and turn in to the Transportation and Parking department to be eligible to win prizes.
Students at the university's "Startup Shell," a collaborative space and technology incubator, may compete in business competitions for potential investor grants from Uber. The partnership will also include mentoring opportunities and the creation of an "innovation council," which will include students, faculty and staff, for crowdsourcing and development.
Matt Carpenter has more than 15 years of experience in the transit industry, including the past eight as CEO of Strathcona County Transit in the Edmonton area. He has a master's degree in urban planning from the University of Michigan, where he studied from 2001 to 2003.
Executive Order 8 addresses Illinois' fiscal crisis by recommending that state agencies require employees, whenever possible, to take public transportation or carpool when traveling. The state hopes this action will reduce travel reimbursements in gas money.
The university recently issued an RFQ and is evaluating potential locations. Four of its new buses are powered by CNG, and the school says it sees a benefit to converting more of its vehicles to alternative fuels.
In his new role, Jerry Rineer works with Villanova students who have mobility issues, providing support for them as they make their way across the 254-acre campus. The private university, which has a total enrollment of about 10,700, has a large fleet of vans and other vehicles to serve its students.
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Hi there at this site, where you can download the most popular ringtones for your phone. Today we have a ringtone of "Geronimo" by Aura Dione as well as 741 other ringtones by Aura Dione. "Geronimo" is a top-rated song from the "Before The Dinosaurs" album that was composed by Aura Dione at their studios together with other 19 tracks. You can listen to all 216 Aura Dione – "Geronimo" ringtone variations available here and download it for free just in a click. You can also take a glance at other 2 albums produced by Aura Dione for all time. "Geronimo" is referred to Pop, and we have a huge amount of Pop albums absolutely for free. And finally, we have collected lyrics for this track and you can view it here as well. So feel free to browse, listen, download ringtones at Audiko.net. Make your phone sound cool!
Aura Dione Geronimo Ringtone
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Albums by Aura Dione
Aura Dione
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- Friends (Special Version) [feat. Rock Mafia] [Remixes] EP
- Bravo Hits, Vol. 77
- NewMuz.net
- www.musicdjsmp3.com
Top ringtones by Aura Dione
- Aura Dione - Geronimo
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The 'father' of a dw knocked on my door today...
lol! the guy half of the couple i bought the stove from knocked on the door today to see if I still wanted the dw! I'd been wondering if she got her dw changed out yet. I've also watched CL in case she forgot my name /#. But her dh remembered where he delivered the stove and he'll deliver the dw tomorrow. And while here he said he'd check my car - lol! it wouldn't start today - even with a new battery. not even a peep out of it. He saw it setting out there with it's hood up (flipped it's lid). I was so disgusted w/it I just left the hood up all day - (don't get me mad - I can be vicious).
Such a nice couple. I was thinking of that dw the other day when planning my list for the electrician when he comes out. Figured I'd let him put in the other one and maybe if it's old enough I'd check if it had other panels on the door. Now I won't have to think about having him back to put this one in later.
Another weird thing happened - when I left the new place just at dark (still enough light to walk around to the old place) I noticed a light - IN MY CAR! what the heck? the inside light was on! I couldn't get it off either so I just shut the hood (kinda hard) and boom! the light went off. That could have just been good timing since I'd also just shut the front door after fiddling w/the switches. But why was it even on?
ok, ghosts... I'll take the key out in the morning and see if it starts on it's own. either way, it's going to the car doctor.
And what with a guy showing up here in a truck, my car out there w/it's hood up and the puppy barking (and barking - I"m sure it was a leaf or 2" long twig cause the guy was long gone) my neighbor lady behind me called to see if I was ok. After hearing about the guy, dw and car she said if I needed her to take me to the store tomorrow she'd be home. (how nice of her!) Her ds works on cars at a local Nissan dealership - I'd planned to call him tomorrow to see what could be wrong with a dead (new) battery and no sound at all (starter? alternator? there was a time I'd have known the answer to that). But I thought I should wait til I wasn't so mad at the car. Didn't wanna use any bad words even tho he is in his early 20's.
the dw was delivered earlier. It's a GE and looks very nice.
I tried the car - and it started right up. It's haunted.
AND puppy barked at this guy with the dw - TWICE! I clapped for her and gave her a cookie each time. So proud of her. At 1.5 yrs old I think it's about time she barks at more than paper and birds!
Congratulations on your new DW(and stove)
and on the puppy's alarm system bark !
thx ERF!
marti - yeah, I know. I was shocked. I'd been watching CL for them to list it - figuring they wouldn't think to keep my ph# (Or bother). to just stop in here to see if I still wanted it - and then to even offer to check out my battery (plus deliver the dw). wow. such nice people.
THEN with everything going on - I forgot to pay them! and they just left... I was just heading to the door (w/purse in hand) to head down to their house when I heard a knock ... they came back. I was just so glad they did.
and yesterday the car died on me again. just down the road from my mechanic. he sent someone down to jump it. It reacted weirdly. he suggested a short somewhere (not me either!).
I stopped on down at the shop and the guy came out and thought something looked weird and tightened something. But the car was dead again today... I'm beginning to think it is this new battery and/or maybe how it was put in. Will be calling the mechanic in the a.m. (even tho I'm scheduled to have it in there on Monday a.m.). the way it is now I'll need a jump to get there!
now i'm afraid to go anywhere for fear it won't start when I'm done and ready to come home. I'll be stuck out in the heat again.
and yeah - I was glad to hear puppy bark at a real person! I did wonder if she barked at him 'cause he's bald (shaved).
btw, the dw is a GE - hope I don't hate it. I opened it and it looks like it's never been used!


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A celebration of Juneteenth, the days at the conclusion of the civil war when word slowly spread about the unconditional liberation of slaves throughout the south is scheduled for Saturday in Oroville at Martin Luther King Jr. Park. Sponsored and organized by the African American Family and Cultural Center, the event features activities and entertainment for people of all ages and runs from 2 p.m. to 8 p.m. For more information call 403-3948
Back to Events
Juneteenth Celebration
Location: Martin Luther King, Jr. Park, Oroville, CA
- 2:00pm–8:00pm Saturday, June 15, 2013
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Downtown Chico
6:00pm, 4-2-2015
Chico, Oroville, Paradise
8:00am, 4-4-2015
Chico Women's Club
7:30pm, 4-10-2015
KZFR Studios
6:00am, 4-22-2015
Downtown Chico Plaza
6:00pm, 4-23-2015
Chico Women's Club
7:00pm, 4-24-2015
End Of Normal
12:00pm, 5-9-2015
Masonic Lodge
7:00pm, 6-5-2015


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Made in England, the new British Chloe recalls Kangol's British heritage, thanks to its traditionally elegant patterns. Updated in a new shape and crafted with theutmost attention to detail, it features a flat crown and a curved peak. It's perfect for your big-city cousin, who thinks of fashion first, and warmth second. (This Kangol style conveniently satisfies both needs.)
Refer to sizing chart for proper fit. Lined. 2 ¼" brim. Flat crown. Made in England.
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Minnesota Vikings
Vikings Reconsider, Put Peterson On Paid Leave
Adrian Peterson has had the potential to be that rare post-modern NFL running back playing productively into his 30s.
Peterson Exiled Because of Money, Not Morality [BLOG]
Fans look at sports as a place to learn the value of competition and character.
Calvin Johnson Weighs In On Adrian Peterson Situation, Discipline Of Children [VIDEO]
Johnson's first reaction was one of sympathy for Peterson.
Vikings Bar Peterson From All Team Activities
After a day of public pressure from angry fans and concerned sponsors, the Minnesota Vikings have reversed course and placed star running back Adrian Peterson on the exempt-commissioner's permission list, a move that will require him to stay away from the team while he addresses child abuse charges in Texas.
Radisson Suspends Minnesota Vikings Sponsorship
The Radisson hotel chain said Monday it's suspending its sponsorship of the Minnesota Vikings after star running back Adrian Peterson was charged with child abuse in Texas.
Adrian Peterson's Statement On Child Abuse Charges
My attorney has asked me not to discuss the facts of my pending case. I hope you can respect that request and help me honor it.
Vikings Reinstate Peterson Despite Abuse Charge
The Minnesota Vikings reinstated star running back Adrian Peterson on Monday, three days after benching him because he was facing a child-abuse charge in Texas for using a wooden switch to spank his 4-year-old son.
Renovated Vikings Defense Ready To Play For Real
The Minnesota Vikings will have seven new starters in their base defense this season. The scheme itself is a lot different, too, using more man-to-man coverage, blitzing and disguises than in the past.
Sharrif Floyd Looks To Continue Vikings Tradition Of Good Defensive Tackles
The Minnesota Vikings have a long tradition of having very good defensive tackles. They drafted Sharrif Floyd in the first round of the 2013 draft in hopes that he can continue the trend. He learned a lot of from former teammate Kevin Williams and slimmed down in the offseason to reach his full potential. This season should be the beginning of the Floyd era in Minnesota.
5 Worst Teams In NFL Heading Into 2014 Season
Let's take a look at who the five worst teams will be heading into the 2014 NFL season.


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Classic Lunch: It's "Psychedelic Friday!!!"
You're gonna like whatcha see...with your eyes closed!
You're gonna like whatcha see...with your eyes closed!
When Tremonti hit the road, Wolfgang Van Halen will be honoring his commitments to Van Halen.
Kiss co-founder Gene Simmons has announced his involvement in a new film company, Erebus Pictures, that's partnering with WWE Studios to produce horror movies under a three-picture co-production deal.
On March 27, 1986, the city of Shreveport, La., bore witness to the very first public performance of Van Halen MKII.
The Rush discography is full of beautiful album covers, and artist Hugh Syme has been there every step of the way.
It's been nearly a decade since the Who released their most recent LP, 2006's Endless Wire, and it still looks like it'll be a while before fans hear another new album from Pete Townshend and Roger Daltrey.
I'm back at Gritty's in Auburn today for another live broadcast of the WBLM Afternoon Express!
Today you got a sonic step forward, a wicked cheap ticket, and a tribute to an overlooked U.K. rocker...
Microsoft is doubling the number of free hits you get with an Xbox Live subscription for April's Games With Gold, including Child of Light, Terraria and more.
I don't have any tattoos. I have trouble committing to a pair of shoes in the morning; committing to something that would stay on my body for the rest of my life would be impossible. Maybe that's why I'm in awe of movie tattoos, and the lengths some folks go to to show their love of film. Forever! You've got to be a pretty big fan of a movie to plaster it across your chest for eternity. What if your tastes change? When I was 14, I was really into Police Academy. Can you imagine if 20 years later my wife woke up every morning to this etched into my back?


text:
Lung Disease & Respiratory Health Center
Emphysema Directory
Sort by: Date A-Z
- Quitting Smoking Tips for Women
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- Smoking Cessation Benefits
- Quit-Smoking Aids: What Works?
- 10 Ways to Reduce Stress While You Quit Smoking
- Avoid Gaining Weight When You Stop Smoking
- Find Your Smoking Triggers
- Smoking Myths and Facts – 10 Excuses Busted
- Quit Smoking for Good
- Quitting Smoking Without Weight Gain
- Stop Smoking by Writing
- Smoking Triggers: What Are Yours?
- The First 30 Days: Quit Smoking!
- Smoking: Drop the Habit Without Picking Up Weight
- How to Quit Smoking
- How One Woman Quit Smoking - for Good
- Breaking the Habit
- Can You Get Away With Social Smoking?
- Alternatives for Giving Up Cigarettes
- 10 Overlooked Reasons to Quit Smoking
- COPD Prognosis
- COPD: 11 Foods to Avoid Weight Loss
- Living With COPD: Household Hazards to Avoid
- COPD and Sex
- Breathing With COPD
- Short of Breath? Tips for COPD Breathlessness
- Understanding and Treating COPD
- Living With COPD: About Treatments, Exercise, and Diet
Today on WebMD
You may not even know you have it.
Signs of this potentially fatal complication.
When a cold becomes bronchitis.
Causes behind painful breathing, fluid buildup.
Pollen counts, treatment tips, and more.
It's nothing to sneeze at.
WebMD Allergy App
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Black Orchid PitcherBlack Orchid Pitcher
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LRG Core Collection Black Bi-Fold Wallet
Item # 206902
Buy1 Get1 Free
Stash Points: 297
What is this?This is the number of points you get in The Zumiez Stash for purchasing this item. Stash points are redeemable for exclusive rewards only available to Zumiez Stash members. To redeem your points check out the rewards catalog on thestash.zumiez.com.
Make sure you're cash is stashed away real nice in the LRG Core Collection black bi-fold wallet.
|More Details
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- Grouping and Descriptive Categories (8)
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Organization for Free Software in Education and Teaching. Our goal is to develop free software for education with knowledge sharing as our main concern. We already have developed software as DrGeo, GCompris, DrGenius and the live CD freeduc.24 weekly downloads
General Graphics Interface
GGI stands for "General Graphics Interface", and it is a project that aims to develop a reliable, stable and fast graphics system that works everywhere. We want to allow any program using GGI to run on any platform requiring at most a recompile.49 weekly downloads
MinEd Text Editor
Text editor with extensive Unicode and CJK support. Convenient and efficient features for editing of plain text documents, programs, HTML etc. User-friendly interface, mouse control and menus. Runs in a text-mode environment like xterm or mintty.5 weekly downloads
phpFIRST is meant to be a base or framework for a web site for FIRST robotics teams to use. It is an easily deployable php based web site framework that makes use of mySQL. It includes news for every aspect of FIRST, a simeple image gallery, and a simpl2 weekly downloads
ARaC (Almost Random Cipher) is (or will become) a 512bit cipher. The ARaC suite is a C program which can encrypt/decrypt files and streams. The cipher itself cannot be download on SF due to US export laws, check http://arac-suite.sourceforge.net !1 weekly downloads
MyServer development has moved to GNU savannah since it became an official GNU Project: https://savannah.gnu.org/projects/myserver1 weekly downloads
TeXas assists the building process of LaTeX files and provides useful scripted features. It mainly acts as an automated build system. TeXbooklet creates booklets out of LaTeX files while TeXlayout creates a LaTeX file with a standard layout in it.1 weekly downloads
startuxcode is a weblog featuring all the goodies a *trully* Contents Management System can provide. It has a powerful BackOffice that allows you possibilities you cannot even imagine. If you want to see it in action, please visit www.startux.org1 weekly downloads


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your funny sakura-chan..^_^..lol...
and dont be sorry..^_^
Hello! yay! more members! WOO! lmao... What's up every body?
you can call me Kiani for short if ya like lol
Or Shona (my name is japanese) ^^
thanks 4 calling me funny i hope thts in a good way!!!!!
hi every1
i wonder what emily is in japanese????*wondering curiously*
anyway ok i'll call u kiani thts if i dont 4get again
god im so dumb!!!
anyway c ya take care all of ya
hello there..
I'm kinda new here.. so hope to get
some friends.. and I joined 'coz I luv
vampires!.. hehe.. bloody.. joke!..
hi elocinixcz123 wanna b friends??
and welocme 2 the vampire society!! =]
Lol thats okay, my user name just might remind you to call me Kiani since it is Kiani Haki22 lol.
Welcome Kiani and Eloninixcz! lol :]]]]]] any one want 2 be my friend?
I do want to make friends with you two.. darkangel and brokenxgirl..
thanks.. btw can I call you by simpler names?..
sure call me Darkangel or Sara. Sara is my real name! lmao