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Rugby Union
Select a team
Six Nations
- England
- France
- Ireland
- Italy
- Scotland
- Wales
Aviva Premiership
- Bath
- Exeter
- Gloucester
- Harlequins
- Leicester
- London Irish
- London Welsh
- Newcastle
- Northampton
- Sale
- Saracens
- Wasps
The Rugby Championship
- Australia
- New Zealand
- South Africa
Guinness PRO12
- Cardiff Blues
- Connacht
- Dragons
- Edinburgh
- Glasgow
- Leinster
- Munster
- Ospreys
- Scarlets
- Treviso
- Ulster
- Zebre
Top 14
- Bayonne
- Bordeaux-Begles
- Brive
- Castres
- Clermont Auvergne
- Lyon
- Montpellier
- Racing Metro
- Stade Francais
- Toulon
- Toulouse
- Grenoble
- La Rochelle
- Oyonnax
Hugo Southwell
Hugo Southwell's career ended by hamstring injury
Friday 14th February 14:39
Wasps and Scotland full-back Hugo Southwell has been forced to retire on medical advice due to a hamstring injury.
New challenge excites Southwell
Tuesday 23rd August 12:49
Fullback Hugo Southwell is hoping to make his first appearance for London Wasps when they face Benetton Treviso on Saturday.
Wasps sign up Southwell
Wednesday 3rd August 16:51
Scotland full-back Hugo Southwell has signed a two-year deal with Wasps after leaving Stade Francais.
Southwell calls for tries
Monday 14th June 23:13
Hugo Southwell says that Scotland need to find a way to cross the try-line in the second Test with Argentina.
Scots seek Azzurri fillip
Wednesday 18th February 15:32
Hugo Southwell believes victory for Scotland against Italy will kick-start the home side's RBS Six Nations campaign.
Southwell remains focused
Friday 14th March 17:10
Hugo Southwell insists Scotland have not got carried away after the excitement of beating arch-rivals England.
Southwell aims to take chance
Thursday 24th November 10:13
Scotland's Hugo Southwell is confident he will perform against the All Blacks.
The Off Load: Rupert Cox's best and worst from the last week in the world of rugby
Rupert Cox shares his highlights from the week's rugby action in his round-up blog...
Which players would miss out if all countries had England's foreign-based player policy?
Toulon's Leigh Halfpenny features for Wales on Friday night, but there is no place in the England team for club team-mate and European Player of the Year Steffon Armitage, due to England's selection policy.
England's Six Nations injury worries continue to grow. Who will England miss the most?
We take a look at Stuart Lancaster's injury concerns ahead of England's Six Nations opener with Wales and beyond.
Experts & Blogs
Phil Edwards
Read the thoughts and opinions of Phil Edwards with skysports.com


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View video from some of the most influential and controversial documentaries released in the midst of U.S. presidential campaigns.Continue reading this entry »
barack obama
An Update to "Street Fight"
There's a lot going on New Jersey these days: a heated race for governor, a money laundering and public corruption scandal that saw the arrest of 44 people in July, and a bumper crop of cranberries. The city of Newark, N.J., is also back in the spotlight as the focus of a new Sundance ChannelContinue reading this entry »
Inauguration '09: I Was There. And So Were You.
POV interactive director Theresa Riley was in Washington D.C. last week for the presidential inauguration. She tells us about watching — and documenting — the inauguration from the ground. A few days after the election in November, Thursday the 6th to be precise, I called up my congresswoman's D.C. office and asked to be putContinue reading this entry »

subset: commoncrawl


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Join us for worship and teaching from God's Word at our weekly large group meetings, normally on Tuesdays in Brackett 100 at 7:45pm!
Want to get involved in a small group Bible study?
Get connected today!
Men's Retreat is February 6-7, at Gravitopia and a church in Greenville. Register by January 30 to save your spot! Register here.
Sign up for Women's Retreat! We're going to Gatlinburg, TN this year! Feb.6-8. Limited spots!
Want to learn more about Cru and who are? Follow this link or shoot us an email at email@example.com.
The staff would love to
speak with you!
Want to get connected? Shoot us an email if you'd like to be added to our email list serve and find us on Facebook, Twitter or Instagram.
We also have a YouTube channel with event promotional and recap videos!
We also have a YouTube channel with event promotional and recap videos!


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"Educational, but I just can't relate"
The descriptions were vivid and emotions are strong in the characters. They were flawed and well written.
However, I simply could not relate to Stephen. I was born sickly and developed determination as part of a coping mechanism and detest people who are physically strong but appeared weak willed.
So the part I like least is Stephen, but everything else was great. Which, seeing as s/he is the main character, made my position a little odd.
If there's a sequel I don't want to know about it.
Descriptions. The author's voice was a little too fast, but it was manageable with the audible software.
Uh, no. It actually depresses me. Success and money does not make a person happy.
I don't have anything against Stephen in terms of sexual preferences or social standing. I just wish she would grow some self esteem. Self-sacrificial tendencies are so not attractive.
"Almost screamed with joy when I saw this!!"
Very Noir StoryBecause it IS very typically noir with all the detective work and what not. All it lacked was a slick, mysterious lady of the night.
Murder of the Orient ExpressDo I have to explain this??
Since I listened to Pinchot's performance in other Grimnoir works. It held true to the story.
Murder! Mystery! Unexpected Twists!
All I had to complain was that it was too short! Moar, Mr. Correia! Also, would like to find out Toru's reaction re Mr. Sullivan's latest daring rescue.
"Haven't regretted a Larry Correia yet!"
The suspense, the bloodshed, the sheer blood and guts of it. Nothing sparkly or clean here.
When Jake Sullivan revealed his plan M. I was bowled over. Totally did not see that coming.
His male, female and narrative voice are all very distinctive. No overlap, very well done. Although would like to see his 'shouting' voice actually shouting or at least a little louder. Only knew the characters were shouting via... he shouted...
It was a little odd.
Quest to find the Pathfinder
Go read it. It's worth your time.
"Irritatingly spotty naration"
Amanda Quick, maybe. Anne Flosnik maybe never.
I have waited for a long time for this book to be available in audio form, keeping fingers crossed that it would be Tomlinson to do the performance. Unfortunately...
Let me count the ways.
First, the pace of the performance was just a touch slow. Nothing that can't be solved with the speed option. Optimal speed is at 1.25.
Second, the male voices were a little... odd. Not very masculine and uneven allover, like a badly made jumper.
Third, voices tended to bleed into each other. Flosnik's narrative voice and masculine voice jumped around a bit. Made for a very irritating experience.
No. The first book already stretched my ability to suspend disbelief. Fine, the female character's amazingly intelligent, when it comes to money, and incredibly dense to the point of stupidity when it comes to matters of human relationships. I could credit all this as naivete and escapism but NOT. THE. MALE. HALF. OF. THE. FAMILY'S. LOW. CLASS. ACCENTS.
Seriously? They are gentry aren't they? At least the second generation? The very good looking twin brothers? Surely they have some pride or at least would have tried to distance themselves from sounding like low pay help?
It's either that or Flosnik put too much emphasis on all the 'ain'ts' that appeared in the story. OMG, I want to dig out my eardrums with a spoon.
I'm returning this book, I can't have it taking up a credit I could have spent on something else. How did it get a 4.1 rating anyway?
"Yay, Franks!"
It's about Franks, what more can I say?It's a story that explored the INSIDE of Franks' head. A head that is more than a little alien and very different from any human's.
I've always liked Z and Earl, but Franks is frankly in a league of his own. Almost literally. Oh, I'm still hoping that we'll get to see Jason Lococo in the next installment. Please say he's not dead, or an undead. Or a transformed mutant thing.
The moment when the warrior monks tried to get their long spears out of their very colourful bus under the Bureau's wary (and incredulous) eyes. It was awesome.
Franks have a heart. It was painful to look at yet incredibly sweet at the same time. Like warming up a frostbitten limb.
I've listened to audio recording twice. Once by itself, and once going through the whole series again.
What other books but the other THREE awesome Grimnoir Chronicles starring Sullivan Senior? Clearly Joe inherited more than his dad's brawn and powers over gravity, it's a pleasure to see how that scholarly brain would have turned out with proper education. Bronson Pinchot gave Joe a voice that gave the impression of being as deep as mountain roots (Like his dad) but with a crisper edge and just a hint of uncertainty as the son of a famous man.
When I first heard Pinchot's voice it was in Grimnoir book 1. At first, I was a little put off due to heavy favoritism for Oliver Wyman's voice (Performing Correia's MHI series) and could not really give the book my full attention.
Jake's rather slow drawl takes some getting used to.
I giggled. Peopled looked at me oddly at coffee shops.
This story is good enough to be a standalone even though it's a continuation of the Grimnoir Series. Only wish it could be just a bit longer. Readers who like this should totally read about Sullivan Senior's adventure.
"I like this better than Kiera Knightly's film"
Yes, I've listened to it many times
The moment when Mr. Darcy first danced with Elizabeth
Mrs. Bennet. Funny!
Ah, when Elizabeth realizes she loves Darcy
I would love to listen to other dramatized version of Jane Austen's books.
Also, sorry Kiera Knightly
"Mrs. Bradley is Scary and Awesome"
An elderly scary female detective as oppose to one who might be side tracked by a bit o' muslin' on the side? Count me in! Sorry Nancy Drew, I stopped reading about you once it started to center round her relationships. I read Mysteries for MYSTERIES.
Also, Mrs. Bradley is scarily awesome, or was it awesomely scary?
Mrs. Bradley! The others are mere side dishes. Also, I may like the forgetful and sporting pastor.
I bought this book because it was Patience Tomlinson.
Beware of old ladies with teeth.
I like mysteries well enough, but I think I'd only purchase more if they are on sale.
I've listened to it more than 5 times now.
It was funny without being overdone, and oh the misunderstandings and the minor intrigue and Lady Whatshername being all snobbish and "After serious consideration, I have resolved to ignore my nephew's misconduct' indeed!
Act 1! The whole of Act 1!
Ah no, there are MORE? I MUST HAVE IT!
Yeah, only 2 hours, I have listened to it sitting, standing and driving.
"Zombies & Werewolves & Gov Agents, oh my!"
TOP NOTCH! For casual no heavy thinking full of explosions listen. It was better than watching Mission Impossible. There are werewolves and concerned citizens turned werewolf hunters! Full of Awesome!
Ah, the part when Earl realizes he may have found True Love!
I love everyone of them! Earl especially, though a special mention of the Lady in Charge of the School Gym is very satisfactory as well. Part of the reason why I read MHI was Wyman's voice.
I did listened to it in one sitting.Until 4 am...
I had a headache, but it was well worth it. A few days later I listened to it again, at a more reasonable pace. Starting from book 1. Yeah.
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black and white recolor - I think there is too much saturation
photo by Ario Wibisono
Thank you everyone!! This is such an honor!!Nov 13th Reply
Your art is very inspirational to all of us artists and at Shadowness we like to thank our amazing artists for all they do, to show our appreciation for you,your artwork has been featured in todays Daily Inspiration #1337
* hangs her head in shame, I haven't been around in SO long * I promise since you and Aki have given such honor to my recolor, I'll try and get back here more often.Nov 13th Reply
niiice! :)Nov 6th Reply
Congratulations, Mizzabelle!
On behalf of my fellow gallery moderators, I am happy to share the news that your beautiful creation was selected for the Daily Feature Award and is now in rotation on the front page of Shadowness!
This piece can be seen under the "star" menu at the top of every page, and it will also be featured in the next issue of "Daily Inspirations"! fb.com/shadowness
Thank you so much, it's such an honor!Nov 13th Reply
Also shared in these places today-
Facebook- https://www.facebook.com/HUAMAILO
Twitter- https://twitter.com/GarapanX
Wow.. really beautiful.. ......Feb 28th, 2012 Reply
Thank you and thank you for the faveFeb 29th, 2012 Reply
....Feb 29th, 2012 Reply
Beautiful colours !Feb 26th, 2012 Reply
Thank you and for the faveFeb 26th, 2012 Reply


text: I am quiet and easy going - but rambunctious when the occasion is appropriate. I lived in Santa Barbara California for more than 20 years and decided to move to Chile to start up this home rental adventure. I designed the country home thinking in giving comfort for my travelers. I spend too much time in front of the computer working on a bazillion different projects. I need to spend more time backpacking and trekking. I love my town and country and am excited to host nice, interesting people.


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TALLAHASSEE, Florida — There's a budget gap of more than $4 billion dividing the Florida Legislature.
The House and Senate released rival spending plans on Friday.
The House is proposing a nearly $76.2 billion budget for this year. The Senate's budget is more than $80.4 billion.
The main reason for the gap is because of health care spending.
The Senate budget includes extra money to help hospitals. The Senate is also proposing to draw down federal aid in order to extend health care coverage to 800,000 Floridians.
Both budgets boost spending on public schools higher.
The gap means budget negotiations could be lengthy and contentious.
House budget chief Rep. Richard Corcoran calls the gap a "chasm" but said he's optimistic an agreement can be reached by the end of the 60-day session.
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Investigative Reporter
WTVD, the ABC Owned local TV and digital content provider in Raleigh-Durham, North Carolina has an immediate opening for an Investigative Reporter. At least three years experience is preferred with emphasis on developing sources and using data to uncover stories that matter.
Send resumes plus links and/or non-returnable DVDs to Rob Elmore, News Director, WTVD-TV, 411 Liberty Street, Durham, NC 27701. Please ALSO apply for the position online, by logging on towww.disneycareers.com and search for the job title Reporter / Req ID# 201293; create a candidate profile and UPLOAD YOUR RESUME FILE.
Equal Opportunity Employer – Female/Minority/Veteran/


text: Retro Sweets Jar Rhubarb & Custard by Ellie Ellie £9.50$19.37€13.63$15.29 In stock £26.00$53.02€37.30$41.86 delivery to United States - Receive this item 5-10 working days from dispatch International delivery available make it extra special with a personalised message on the lid!make it extra special with a personalised message on the lid! (required)yes please! [PS] (+ £3)no, not this time.make it extra special with a personalised message on the lid! (required)yes please! [PS] (+ $6.11)no, not this time.make it extra special with a personalised message on the lid! (required)yes please! [PS] (+ €4.30)no, not this time.make it extra special with a personalised message on the lid! (required)yes please! [PS] (+ $4.83)no, not this time. your personal message quantity by Ellie Ellie Location: East Sussex, GB read seller's profile see seller's complete range more items from this seller Personalised Square Map Location Cufflinks £29.50$60.15€42.32$47.50 Checked Recycled Wool Blanket £24$48.94€34.43$38.64 Sixpence Date Coin Cufflinks £29.50$60.15€42.32$47.50 Map Personalised Cufflinks Circle £29.50$60.15€42.32$47.50 Sixpence 50th 1965 Birthday Coin Necklace £30$61.17€43.04$48.30 Vintage Letter Tile Cufflinks £24.50$49.96€35.15$39.45 view all you may also like PRODUCT DETAILS CUSTOMER REVIEWS DELIVERY RETURNS can be personalised ask seller a question A tall jar of scrumptious rhubarb & custard sweets, perfect for any retro sweet lover! They read 'Sweet shop treats, bright sunny days, after school fun!' Inspired by after school visits to the local sweet shop with pocket money burning a hole in your pockets! A vintage sweet shop favourite- a great gift for a birthday or a 'just because' prezzie to put a smile on someone's face! You will also find a jolly joke inside each jar that is sure to tickle some ribs! Transform this jar into the ultimate gift by adding a personal message on the lid! made from: Fruit flavoured boiled sweets. Ingredients; sugar, glucose syrup, citric acid, flavourings, colours; E100, E163. May contain traces of nuts. Bounce friendly recyclable plastic jar with aluminium lid. dimensions: Jar measures 12 x 7 cm Weight 310g (approx 52 sweets per jar) product code: 249634 2 customer reviews Wed 28 May 2014 Personalisation was very expensive for what it actually was Ellie Ellie's response: Thanks for your feedback and we're sorry to hear that you're disappointed with your purchase. Our products are carefully priced and we always offer the lowest price possible. Personalised and bespoke items are made-to-order to your exact specifications, which increases the time and care we invest in creating them. We aim for customer satisfaction at all times, and we are sorry to hear that you were not completely happy with your order. Please contact us via your order enquiry if we can assist you further. Sat 04 Jan 2014 No comment supplied. read about our product rating system ratings guide trusted independent customer feedbackforum excellent bad good poor This product is dispatched to you by Ellie Ellie. MAINLAND UK order now and receive this item on or before price Standard Delivery Monday 30 March £3.75$7.64€5.38$6.03 Express Next Day 1pm Monday 30 March £9.70$19.78€13.91$15.61 Saturday Delivery Saturday 28 March £15.70$32.01€22.52$25.28 NON-MAINLAND UK estimated delivery price Highlands & Islands of Scotland 2-5 working daysfrom dispatch £3.75$7.64€5.38$6.03 Northern Ireland 2-5 working daysfrom dispatch £3.75$7.64€5.38$6.03 Other UK Islands 2-5 working daysfrom dispatch £4.95$10.09€7.10$7.97 INTERNATIONAL DELIVERY estimated delivery price Western Europe 2-5 working daysfrom dispatch £15.50$31.60€22.23$24.95 Rest of Europe 5-10 working daysfrom dispatch £15.50$31.60€22.23$24.95 USA & Canada 5-10 working daysfrom dispatch £26.00$53.02€37.30$41.86 Far East & Australasia 5-10 working daysfrom dispatch £30.00$61.17€43.04$48.30 Rest of the world 5-14 working daysfrom dispatch £30.00$61.17€43.04$48.30 You have 28 days, from receipt of cancellable goods, to notify the seller if you wish to cancel your order or exchange an item. Please note: goods that are personalised, bespoke or made-to-order to your specific requirements, perishable products and personal items sold with a hygiene seal (cosmetics, underwear) in instances where the seal is broken are non-refundable, unless faulty. Read more about our returns policy.Should you choose to return or exchange your order you will need to deliver the item(s) to the UK, where this seller is based. Ellie Ellie's return policy


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WEBSTA - Instagram Web Viewer
Dont stop dreaming because there is no wrong in wanting more! Dont stop praying! Life is the most amazing gift to us from God
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Ex-Gov. George Ryan could join a long list of those granted presidential mercy
Sen. Dick Durbin caught a lot of flak last week by asking President George W. Bush to commute the federal corruption sentence of former Illinois Gov. George Ryan. But it was a reminder that the commander in chief is also the forgiver in chief. Over the last 21/4 centuries, U.S. presidents have... Phil Velasquez, Chicago Tribune


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Spearfish Local is a new initiative that brings together local producers, distributors, purchasers, and consumers of local food and other locally-sourced products. The goal of Spearfish Local is to grow support of the local economy and to work together to achieve greater things than we could as separate organizations.
In supporting the local economy and the growing demand for healthy food sources, BHSU has launched an independent certification system to provide an unambiguous definition and identification to local products. Look for the Spearfish Local logo starting in winter 2014 for businesses who sell local food products.
If you are associated with a business that sells local products, please fill out our form to apply for the free Spearfish Local badge. Badge recipients will be given a window decal to show that your business supports local producers and Spearfish's economy. Businesses who have received the Spearfish Local badge will be listed here.
Spearfish Local's focus is to:
Eat Local
Bay Leaf Cafe - locally raised lamb all year, Spearfish grown fruits and vegetables in the summer
Black Hills State University and A'viands - grows food at the campus garden for use in the campus dining hall
Booth Society, Inc. - honey, jams, jerky
Cycle Farm - a variety of produce sold through Community Supported Agriculture and Farmer's Markets
Eric Jennings Angus Beef - locally raised beef
Good Earth Natural Foods - produce in the summer, packaged items like honey year-round
The Iron Place - several varieties of sprouts and homemade bread
Leone's Creamery - local ingredients are often utilized in their ice cream, made in-house
Red Barn Farmer's Market - local food retailer
Sunflower Cottage - honey and locally crafted gifts
Drink Local
Belle Joli' - vineyard in Belle Fourche
Crow Peak Brewing Co. - Spearfish brewed beer
Level Wine Bar - local beer
Sanford's Grub and Pub - local beer and wine
Grants/ Sponsors
2014 Healthy Communities Small Grant from
Spearfish Local Interns
Spring 2015:
Fall 2014:
Summer 2014:
Black Hills State University
Katherine Greer
1200 University St. Unit 9502
Spearfish, SD 57799-9513
Black Hills State University, 1200 University St., Spearfish, SD 57799, (800) 255-2478 | © 2014
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Gables West Avenue presents the ultimate in downtown living. Eclectic style and atmosphere and nestled on three acres along Shoal Creek, Gables West Avenue offers easy access to Town Lake's Lady Bird Lake's hike and bike trail, the West 6th Street shopping district and the popular warehouse entertainment and dining areas. Homes embrace the rich cultural influences of the surrounding area with a unique apartment experience offering traditional and loft floor plans with such features as hardwood and stained concrete flooring with varied ceiling heights, island kitchens, built-in bookcases, spiral staircases, wood-burning slate fireplaces and panoramic city views. Enjoy the rooftop terrace, uniquely landscaped courtyards, poolside grilling area, fireplace grotto, lounge overlooking Shoal Creek, fitness center and convenient street level retail and the adjacent Whole Foods Flagship Market. Join us and share in the excitement that is Gables West Avenue.
3 months, 4 months, 5 months, 6 months, 7 months, 8 months, 9 months, 10 months, 11 months, 12 months, 13 months, 14 months, 15 months, 16 months, 17 months, 18 months
Monday: 9:00 AM to 6:00 PM
Tuesday: 10:00 AM to 6:00 PM
Wednesday: 9:00 AM to 7:00 PM
Thursday: 10:00 AM to 6:00 PM
Friday: 9:00 AM to 6:00 PM
Saturday: 10:00 AM to 5:00 PM
Sunday: 1:00 PM to 5:00 PM
|School Level
|Primary School
|Pease Elementary
|This listing is priced
|Zip Code
|the same as
|78701 Apartments for Rent
|the same as
|Downtown Apartments for Rent
|114% more than
|Apartments for Rent in Austin
|115% more than
|Travis County Apartments for Rent
|130% more than
|TX Apartments for Rent
|Primary School
|25% more than
|Apartments for Rent near Pease Elementary
|Unified School District
|113% more than
|Apartments for Rent near Austin ISD
|90% more than
|Apartments for Rent near The University Of Texas At Austin


text:
Top 500 Robotics/Cybernetics/AI company list
Closed - This job posting has been filled and work has been completed.
Job Description
Hi I need a list of the top 500 global robot companies, the list should be based around the share prices and latest innovations it should include the companies contact details also, most importantly the companies website.
It must be produced in an excel spreadsheet with a minimum of 4 columns
Company Name
Website URL
Contact Details


text: The Keys to Channel Partner Success By TIE Kinetix. Published on December 13, 2013. 0 Reprints Reprints Ad Age LookBook Weekly Feature Get Help Organizing Your Mobile Data and Start Tracking What's Working Learn more Perhaps you as a vendor are relying increasingly on your indirect channel for a greater share of revenue. Or maybe the indirect channel is simply an important contributor to your overall revenue mix. Either way, it's critical to help your partners be effective and successful marketers of your brand & product portfolio. This whitepaper looks at how B2B and Channel Marketers can automate and simplify lead generation, the sales process and social media engagement through the partner community. In this article: BtoB Advertisement Read These Next Tumblr's First CMO Stephanie Dolgins Will Also Oversee Its Media Deals Tim Peterson on 03.30.2015 97 0 Chevy Liked Its Truck Effort So Much, It's Taking It National Mike Colias on 03.30.2015 59 0 L'Oreal's Chief Digital Officer on Programmatic Plans, Startups and Org Charts Jack Neff on 03.30.2015 550 0 Comments (0)


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KitchenAid Appliances
I remodeled my kitchen last november and replaced my appliances with Kitchen Aid appliance. Stove, Fridge and dishwasher. I remember reading nothing but negative comments about this brand. I just wanted to add that I after using them for a year, I love them and have had no problems whatsoever. I have the double oven stove, the 24" build in dishwasher, and the friench door fridge with freezer bottom. Not many will post saying positive - you usually only read negative reviews.
I post often about how much I love my KA fridge and warming drawer when threads ask for KA info. KA doesn't seem to have the best rep for ranges. Like every brand, KA has its strengths and weaknesses. I'm considering one of their DW when I finally get fed up with my crappy Kenmore. Glad you're happy with our appliances!
Not everyone is so fortunate.
Here is a link that might be useful: Appliance problems.
We've had good luck too. Our KA SxS fridge never had a problem except when I ran over the back water dispenser line which then needed replacement. The KA DW is on it's tenth+ years (as is the frig) and cleans well although I bet the db is near 54 or so.
Funny how these appliances are. I like Kitchen Aid.
As Murphy66 asked, how loud is the KA range fan and how does the venting affect you? TIA.
I have two KA dishwashers and KA fridge freezer drawers and I am pleased as punch with them!
My KA dishwashers are fully integrated into inset panel cabinetry and look fabulous . . . many have asked if you can do this with a panel ready KA and you certainly can!
Rikerk--no clue. I haven't studied them or looked at them IRL in years. I see model numbers thrown around here often, but don't know how they compare to each other. I know I had decided, based on reading here for two years, that the top brands to consider are KA, Bosch, and Miele. Bosch is now out of consideration completely because of their blantant misuse of Julias Childs' image. That leaves KA and Miele. I'm not sure I want to shell out the mega bucks for Miele, but will certainly look for a floor model or a deal on an old model when the new ones come out. Failing that, I will choose some model of KA.
What about you? Have you thought about models?
Breezy I hadn't planned to replace the dishwasher yet but it will not be long before I really have to. I haven't even started to look at dishwashers yet. That was why I was hoping you had! Our dryer has been on the fritz & I have spent all my time researching washers & dryers.
SSShayne what model DW do you have?
I have this KA Dishwasher: Model #: KUDC10FXSS
This is the model # from the LOWES site where we purchased.
Its so darn quiet - the first few times I ran it I had to get up and make sure it was even on! It cleans great. Looks great too.
This post was edited by SSShayne on Tue, Dec 25, 12 at 17:43
I'll add my opinion of my KitchenAid stainless dual fuel double oven (KDRS505XSS). I've been cooking on it for 9 months and LOVE IT! I love having the small oven on top, it preheats quickly and heats evenly.
The bottom oven has the convection option. It has a fan that runs. I do not hear the fan unless I have the oven open. It's that quiet.
Someone asked about heat venting. I have not noticed any heat venting off the ovens, so I would call this a non-issue also.
I definitely would recommend it to others.
I've had a KitchenAid KERA205PSS freestanding range for 6 years (now superceded by the KERS202BSS apparently). It has radiant heat cooking elements (Ceran), which have been remarkably good - I never knew that electric could be as controllable as gas, and a convection oven.
The only downside has been that I managed to spill drippings between the oven door glass panels and some of the markings on the cooktop have scotched. On the other hand, I've never tried really hard to clean them off.
No service calls and lots of nice meals!
There were KA appliances in our house when we bought it 20 years ago - fridge (1989 model - still going strong, now in basement), D/W (1973 model - still working well when replaced in recent remodel), and double ovens (1980's or so model - still working well when replaced in recent remodel). Couldn't complain, so in our 2012 remodel we went all KA, including a built-in microwave. Six months later - no problems, and we like how all of them perform. Hard to beat, IMO, for mid-priced appliances.
I have been looking for a double oven and microwave, what I have found is that all brands have negative comments. Is it that negative comments get posted or that the quality has suffered over the years?? Have found that KA has a repeated issue with using the cleaning cycle and their microwave with the door latch.
Self cleaning cycle's high heat are notorious for tripping up many manufacturer's ovens. Not all buyers suffer, but it seems a fairly common problem. Dacor (no affiliation) has a reset button which, as I understand it, can be reached from the back of their oven. Not all are as lucky and the oven needs to be pulled to reset.
Back to KA, I played with one of their heftier models counter-depth french door 36" refrigerators yesterday (french doors, bottom freezer but don't know the model number). I went from manufacturer to manufacturer in the showroom testing french door refrigerators. Just like my older current SxS KA, the french doors closed well (good hinge, heavy door, nice vacuum). I was very pleased to see this.
This post was edited by SparklingWater on Sat, Jan 19, 13 at 22:36


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Wood thickness & quality of the wood were a concern until delivery. No problems! If the dimensions & architecture suit you, buy it!
Love this end table. Is rustic or industrial looking without going over the top. Fits in with my less rustic furnishings. I didn't want black legs, so I spray painted them oil rubbed bronze and turned out great. Very solid, would buy it again.
The table is very solid and easy to put together. Material wise, it's good quality. However the colour appears more orange in real life than in the photo. Also it didn't quite work that well in my space once I got it in the house.
I have been looking for rustic home decor and most of the items are extremely expensive. With two young children at home I'm not willing to spend that kind of cash for end tables. The table is durable, sturdy, attractive and in style. Some people have complained (poor reviews) about the wood being warped and not flat. To me this is the character of the table and expected with the rustic style. We love it!
Very rough finish, top is bowed, legs are not solid
We use this along with the bookcases in my husbands home office. Rugged yet classy. Very well made. Would recommend
Love this rustic end table. It has a very nice reclaimed wood top and metal supports. The table was 50% of the cost of other tables that I considered with the same quality.
Makes our room perfect. Great accent piece. Unbeatable price.
Thought I'd be clever and create a dual-end-table-coffee table with this, but it sits higher than the arms on my chair. Works fine as an end-table, which is what it's marketed as, so no big deal! The square shape creates a lot of storage space, and looks great flanking my couch!
Using this as a tv stand in our home office. Easy to put together and is very sturdy.
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The hotel is really nice. The staff was very pleasant and helpful with information. The breakfast was delicious and quick. It is about 10 minutes from downtown Billings, but it is conveniently located within many restaurants and stores. I usually stay at the Crowne Plaza (since it is downtown), but I think this Hilton Garden Inn was nicer.
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Toran Scott brings us a message focusing on how to live a life that is worth reading about, using Timothy's explanation of how to take hold of the life that is truly life. We'll be taking a look a...See Sermons
Imagine that two people are living in your body. The adventurer is spontaneous, creative and focused on feelings, inspiration and curiosity. The admiral is discerning, disciplined, educated and focuse...See Sermons


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Is Sochi Ready for 2014 Winter Olympics?
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Officials Scramble to Finish Facilities in Sochi
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aging polished brass faucet
marthayeJune 2, 2008
I ordered a beautiful bathroom faucet with matching towel rack etc over ebay. I thought that it was going to be darker, but is not. It would look so much better if aged. Can I do this without harming the faucet?
If so how?
Jax makes a product for ageing brass and copper. You'll first have to remove any lacquer on the faucet (boil in baking soda after removing the washers, etc.). I've used this product on brass light switch plates and then followed up with a light wax (Pledge or brown shoe polish). For a kitchen faucet, you'll have to be careful with any cleaners as they'll remove the darker patina.


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Ring 8 Minutes and Notes Tuesday, February 19, 2015
Good meeting. Orlando Cruz- new boxing & health gym in Bklyn spoke on fitness classes. All welcome.
Jack Stanton, Larry's father is boxing lawyer- talked on lawful means to own a fighter nowadays and difference between now and 80′s in owning a fighter. Costs, allegiance to fighter. Getting fights. Al Haymon owns all big named fighters and controls 90% of boxing businesses on TV including Showtime.. He has contracts with all TV except HBO. Haymon is not licensed anywhere. No promoter, mgr, owner, nothing anywhere. Is he legal, remains to be seen. But you must deal with Haymon to get BIG fights. period.
Bob talked about Ring 8 things. The usual.Meeting Notes


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Mear calculators are high quality precision instruments made from non-warping white and clear acrylic. Main dials: 3mm thick; subsidiary dials: 1.5mm thick.
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As part of Broadstone Studios invited artist series, Martin Creed performed his musical works for the first time In Ireland. The Performance was part of Paul Hallahan's first project on the invited artist series called "a lamb lies down"
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|To make an appointment, call toll free 888-Virtua-3 (888-847-8823).
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Come play "Family Feud" with representatives from Sweeney Conrad. The game will feature topics such as: what it's like to be a CPA, differences between tax and audit, work life balance, etc. UW1 -051 from 5:45 pm – 7:45 pm
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birthday free flower
katmatney(5 NY)June 1, 2008
Today is my birthday and yesterday when I got home from work there was a gift certificate from our local nursery for $20.00 that they sent for me to use on any purchase.
I stopped there a few weeks ago looking for new perennials and purchased two new echinacea's tikki torch and raspberry tart. I suggested that he should also carry green envy echinacea. He said that he would check into ordering that, and followed through with a phone call to tell me that his supplier was all out. His employees asked if i wanted to join their loyal customer group for no fee, but of course I said. Then to my suprise I came home to find the $20.00 gc. Guess what I did, ran right out to spend it. Bought another echinacea double delight.


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|Nov 27, 2012, 05:09 PM
Answer 1; Give in, mine will roll to the left with insufficient rotor speed, have you got the roll set correctly, i.e. left stick = left tilt looking from behind, the opposite to what is printed in the instructions which are wrong!
Answer 2; I'm using a DX7 controls on aileron and rudder set @100%, elevator set so it doesn't quite touch the rudder when up elevator is applied and sod all expo or rates on anything, I rate my thumbs
Answer 3; I would look at a two blader in the 10 x 6 range as a starting point possibly going up in diameter and down in pitch, oh and use a slow fly prop with paddle type blades.
At least Marvin lives to fly another day, I'm on number two model since my first met an untimely death in a mid air with a Piper Cub.
|Nov 27, 2012, 05:39 PM
Sorry to hear Marvin had such a rough time of it!
I'm no expert, but I've had successful flights of this Auto-G and I've read a TON about other's r/c autogyro experiences.
I'll give you a run down of my setup via pics and some thoughts.
Check my pics below to see where I positioned all control rods to the horns.
As far as d/rates and expo, I've settled on the following with my DX8:
Ailerons -- 80% with 40% expo
Elevator -- 100% with 30% expo
Rudder -- 80% with 30% expo
Set the head up with a few degrees of left tilt for the neutral position.
I added c/fiber sleeves to the head control rods as they are flimsy and want to bow/deflect on the ground let alone in the air under load.
I also opened up the foam protrusions in the fuse so that my 1300mah lipos sit down on the fuse bottom. Works great with this after hot glueing the esc to the side.
I would suggest hand launching until you get it all trimmed out. I've found hand launching to me much easier than ROG. You'll be able to hear/feel the rotor get up to speed, then just advance the throttle to half or 3/4 and give her a gentle push forward--she'll just fly away beautifully
As for props, I like the 3-blade for the added thrust and better ground clearance. But if I had to use a 2blade I'd probably start with a GWS 11x4.7SF and go from there.
Good luck Marvin!!
|Nov 27, 2012, 06:37 PM
Thanks for the feedback
Paul: I think I had sufficient rotor speed as I did not force the lift off, I let it fly off on its own. The right turning was not just a take-off thing, I fought it the entire flight. Also, thanks to reading this thread, I made sure my roll control was set up properly.
Sammy: Thanks for the radio set up info. Also the pictures of how you rigged yours are pure gold! Much better than Durafly's 'manual.' Also it looks pretty sharp. Great job on the graphics.
Tally Ho!
|Nov 27, 2012, 07:27 PM
Wow Sammy! You saved me a bunch of typing! My setups are virtually identical. Same control horn locations too. I do use 100% throw on the rudder but only because I like having it at hand.
I was able to slide the ESC under and forward and my RX fits in behind that just fine. Battery goes right on top.
Great job on the graphics. I have a hard time leaving an ARF in stock livery too. I think it personalizes your equipment. I just recently added LEDs so I can do a little night flying.
"Marvin" You say it turns right. Is that in roll or yaw? Like Sammy said, I have a few clicks of left roll trimmed in so don't be surprised you'll have to go with that too. Hand launches are much, much easier on equipment. Of course it takes a bit of headwind to make that work, or little speed walking.
One thing to check is that your rotor blades are mounted on top, then the blade stops, followed by the "y" and finally the nut plate. I noticed one of my club mates had a blade stop inverted on his. Not sure what effect ths would have but fortunately, we caught it before the maiden.
It sounds like you are close to getting it sorted out. Try a little expo, if available, and see if the sensitivity eases. Good luck!
|Nov 27, 2012, 10:49 PM
My Auto-G came in today!! Loved how they repacked it. I had ordered some extra blades and a couple props. They unboxed it, put my stuff in and turned the box inside out. It was not double boxed just a extra piece of cardboard on top of the airframe. But they did loose my nosecone when they did all that.
I am sure I can live without it. I have a handfull of 1500mAh batteries I am going to try as I don't own any 1300 packs. But I need both time and warmer weather.
I am a wimp, if its not near or above 60 my skinny butt can't take it.
|Nov 28, 2012, 12:33 AM
Malaysia, Sarawak, Kuching
Joined Jun 2011
74 Posts
|Nov 28, 2012, 12:51 AM
I would post a pic of my Auto-G but I think everyone knows how mine looks.
|Nov 28, 2012, 04:39 AM
Joined Mar 2008
144 Posts
Hi Guys,
I'm not sure if anyone has shared this yet, this pic is from our "Durafly Photo Competition".
I think this auto-g is really creative and cool, feel free to upload pictures of your Auto-G or any-other Durafly you have and you might win a prize
|Nov 28, 2012, 08:11 AM
Too funny! A little "Mad Max" action I see!
I wouldn't want to fly it though....be tough to see!
|Nov 29, 2012, 02:03 PM
|Nov 29, 2012, 02:46 PM
Nice flying
|Nov 29, 2012, 04:42 PM
New Zealand, Canterbury, Christchurch
Joined Aug 2011
159 Posts
|Nov 29, 2012, 05:07 PM
A: Rotor servors centered prior to takeoff......Check
B: Rudder and elevator set to neutral.....Check
C: Empanage aligned true on tail boom.....Check
D:.......? Anyone got a 'D?'
Tally Ho!
|Nov 29, 2012, 05:12 PM
|Nov 29, 2012, 10:28 PM
G'Day Trex
Nice rudder work..........unfortunately ..not enough know how to use it......onya..
Happy Landings
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Giant Spirit is Hungry
by Niark1
Member Since 2007
Member Since 2007
Watch out when giant spirit is hungry, he will eat anything and I mean anything! Giant Spirit is Hungry takes a giant spirit in the forest waiting to find the perfect meal with a knife and fork in hand. Feed your spirit wearing this retro design style shirt.
Shirt of the Day •
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The word early from scientists gathered in Stockholm is clear: The planet is changing, and humans are the cause. But the message from media outlets in the days and weeks leading up to Friday's release of the Intergovernmental Panel on Climate Change assessment presented a far murkier picture: Global temperatures haven't risen in the past 15 years, Arctic Sea ice is growing and scientists are scrambling to explain why.
UN report concludes that humans are responsible for climate change
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NATIONAL — A United Nations report published today concludes that human activity is responsible for at least half of the global warming that has been documented since the 1950s. The IPCC Assessment Report is a benchmark study on global warming…
[OPINION] Obama's Grotesque Hypocrisy over Cluster Munitions
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by: Dave Lindorff / This Can't Be Happening! Syrian civilians and children should count themselves lucky that mass opposition in the US, the UK and much of the rest of the world to the idea of a US bombing blitz aimed…
The Globe's More Than 28-Year Warm Streak Continues
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The Globe's More Than 28-Year Warm Streak Continues (via Climate Central) By Andrew Freedman Follow @afreedma Continuing a more than 28-year unbroken streak of warmer-than-average conditions, August tied with 2005 as the fourth warmest such month on record worldwide, according…
[OPINION] Here's How The U.S. Can Help Rid The World Of Chemical Weapons
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If President Obama is serious about ridding the world, and not just Syria, of chemical weapons, he and America's closest allies in the Middle East should lead the way.
[OPINION] Congress And Syria
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As Washington swirls with proposals, counter-proposals, and political brinksmanship in response to diplomatic efforts on Syria, the situation has a lot of people scratching their heads. Couldn't President Obama and Congress have handled this differently?
Progressives Oppose U.S. Military Action In Syria
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[OPINION] Obama's Political Capital And The Slippery Slope Of Syria
by staff report • • 0 Comments
Even if the President musters enough votes to strike Syria, at what political cost? Any president has a limited amount of political capital to mobilize support for his agenda, in Congress and, more fundamentally, with the American people. This is especially true of a president in his second term of office. Which makes President Obama's campaign to strike Syria all the more mystifying.
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[OPINION] Ten Reasons Why America Does Not Need To Go To War Over Syria
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For once, I would love to hear a government official reject a call to war because it is immoral; because we have greater needs here at home that require our attention and our funds; because we're already $1 trillion poorer due to these endless, mindless wars; because America should not be policing the world; because we refuse to enrich the military industrial complex while impoverishing our nation; because endless wars will never result in peace; and because there are never any winners in war, only losers.


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A substrate having silicon receptive surface areas is maintained in a plasma enhanced chemical vapor deposition (PECVD) chamber at a temperature, and under sufficient gas flow, pressure and applied energy conditions to form a gas plasma. The gas plasma is typically made up of hydrogen, but may be made up of mixtures of hydrogen with other gasses. A discontinuous flow of silane gas of predetermined duration and predetermined time spacing is introduced to produce at least one timed pulse of silane gas containing plasma, whereby a thin layer of silicon is deposited on the receptive areas of the substrate. The thin layer of silicon is exposed to the hydrogen gas plasma between the brief deposition time cycles and may result in the modification of the silicon layer by the hydrogen plasma. The surface modification may include at least one of etching, surface hydrogenation, surface bond reconstruction, bond strain relaxation, and crystallization, and serves the purpose of improving the silicon film for use in, for example, electronic devices. Repeated time pulses of silane gas and subsequent hydrogen plasma exposure cycles can result in selective deposition of silicon on predetermined receptive areas of a patterned substrate. Selective deposition of silicon can serve the purpose of simplifying electronic device manufacturing, such as, for example, the fabrication of amorphous silicon thin film transistors with low contact resistance in a single PECVD pump-down procedure.
1. A plasma-enhanced continuous chemical vapor deposition process for producing the selective deposition of silicon on first surface areas of a substrate containing said first surface areas adjacent second surface areas of different composition, comprising the steps of:
(a) providing a substrate having said first and second surface areas, said first surface areas being selectively receptive to the PECVD deposit and accumulation of silicon;
(b) placing said substrate within a PECVD deposition chamber and introducing a flow of hydrogen gas under sufficient applied energy to form a hydrogen gas plasma, said chamber being at temperature and pressure conditions suitable for PECVD;
(c) modulating the introduction of silane gas to said deposition chamber for brief deposition time cycles to cause silicon to be selectively deposited and accumulated on said first surface areas, and
(d) exposing said substrate to said hydrogen gas plasma during surface modification time cycles, between said brief deposition time cycles, to cause said hydrogen gas plasma to modify the surface of the silicon deposited on said firs surface areas and to prevent the accumulation of silicon on said second surface areas.
2. A process according to claim 1 wherein a surface of said deposited silicon is modified on said surface areas and rendered more receptive to the deposit and accumulation of additional silicon in subsequent deposition time cycles, and the accumulation of silicon on said second surface areas is prevented.
3. A process according to claim 2 wherein when the surface of said deposited silicon is modified by at least one of etching, crystallization, surface hydrogenation, surface reconstruction and bond strain relaxation occurs.
4. A process according to claim 1 wherein said flow of hydrogen is discontinuous.
5. A process according to claim 1 in which said substrate comprises a base layer of a first composition having thereover a surface layer of a different composition, preselected areas of which are removed to expose said base layer as first surface areas adjacent said surface layer as said second surface areas.
6. A process according to claim 5 in which said preselected areas are in the form of a pattern.
7. A process according to claim 1 in which said first surface areas of said substrate comprise a material selected from the group consisting of crystalline silicon, tantalum oxide, indium tin oxide, microcrystalline silicon, polycrystalline silicon, low temperature glass and a metal.
8. A process according to claim 7 wherein the metal is molybdenum.
9. A process according to claim 1 in which said second surface areas of said substrate comprise a material selected form the group consisting of fused silica, thermally-deposited, silica, plasma-deposited silicon dioxide, thermally deposited silicon dioxide, plasma deposited silicon nitride and thermally deposited silicon nitride.
10. A process according to claim 1 in which said first surface areas of said substrate comprise crystalline silicon and said second areas of said substrate comprise silica, and said deposition time cycles have a duration of from about 4 up to about 19 seconds to produce selective deposition of silicon on said first surface areas.
11. A process according to claim 1 which comprises subjecting said substrate to a hydrogen plasma pretreatment to prepare and clean a surface thereof.
12. A process according to claim 1 conducted at a deposition temperature of below 300� C.
13. A process according to claim 1 conducted at a deposition temperature of approximately 250� C.
1. Field of the Invention
The invention relates to the controlled plasma-enhanced chemical vapor deposition and surface modification of silicon onto a substrate at low substrate temperatures using a hydrogen and silane gas plasma, and according to a preferred embodiment, the selective deposition and modification of silicon onto predetermined first surface areas of a substrate while preventing silicon accumulation on unintended second surface areas of the substrate in the course of a process in which silicon is deposited and accumulated in predetermined intended areas of the substrate, such as during the production of semiconductor devices.
2. Description of Prior Art
Plasma-Enhanced Chemical Vapor Deposition (PECVD) processes are well known for the deposition of silicon, including amorphous, microcrystalline, polycrystalline and/or epitaxial silicon, at low substrate temperatures (less than 300� C.) in a variety of electronic semiconductor device structures. Also, atmospheric pressure and low pressure chemical vapor deposition and ultra high vacuum chemical vapor deposition are used at higher temperatures for polysilicon and epitaxial silicon deposition.
It is known to selectively deposit silicon on certain areas of a substrate by epitaxial growth thereon at temperatures greater than 600� C., using chlorinated silanes and ultrapure gases, and reference is made to an article titled "Low Temperature Selective Epitaxial Growth of Silicon at Atmospheric Pressure", by T. O. Sedgwick et al., Applied Physics Letters, Vol. 54, No. 26, pages 2689-2691 (1989). Such processes are limited to use of high temperatures, chlorinated silanes, and certain substrates. The high temperature requirement limits the application of such processes, whereas a low temperature process can be applied, for instance, to amorphous silicon technology or to limit dopant diffusion in silicon devices with small dimensions.
It is also known in the plasma-enhanced chemical vapor deposition process to rotate a substrate within a multiplasma-zone apparatus into exposure with spatially-separated zones of hydrogen plasma and hydrogen:silane plasma surrounded by an outer chamber containing no plasma, so as to expose the substrate to silane plasma, to deposit silicon on the substrate, and to expose the silicon deposit to hydrogen plasma, to passivate or modify the silicon surface, the plasma exposures being separated by rotation of the substrate out of exposure to either plasma. The effect of etching on the growth rate of the deposit is negligible, and no selective deposition is disclosed. Reference is made to an article titled "Preparation of highly photoconductive hydrogenated amorphous silicon carbide films with a multiplasma-zone apparatus" by A. Asano et al. in Journal of Applied Physics, Vol. 65, No. 6, 15 Mar. 1989, pages 2439-2944, and to an article titled "Effects of Hydrogen Atoms on the Network Structure of Hydrogenated Amorphous and Microcrystalline Silicon Thin Films" by A. Asano in Applied Physical Letters, Vol. 56, No. 6, pages 533 to 535, Feb. 5, 1990.
The processes disclosed by Asano have one or more disadvantages which are avoided by the present invention. The rotating-substrate apparatus used by Asano is complicated, appears to introduce contaminants such as oxygen, and is slow in operation. More importantly, the Asano process removes the substrate out of the plasma zones after each deposition and surface modification exposure, thereby interrupting the surface reactions produced by exposure to hydrogen plasma, such as etching, hydrogen radical assistance of the CVD deposition film growth, long range relocation for crystallization, formation of microcrystalline silica, etc.
It is also known to selectively deposit microcrystalline silicon:hydrogen:fluorine on crystalline and polysilicon surfaces, while not depositing on thermal silica sidewalls, to produce a self-aligned TFT structure in a plasma-enhanced CVD process, and reference is made to an article titled "Selective Deposition Of N+ Doped MC-Si:H:F By RF Plasma CVD On Si And SiO2 Substrates", by K. Baert et al., in Materials Research Society Proceedings, Vol. 164, pp. 359-364 (1990). Such process balances etching from SiF4, versus deposition from SiH4 at temperatures above 300� C., namely 315�-330� C. SiF4 causes substantial etching of the SiO2 and therefore is undesirable. Also it is desirable to be able to produce selective deposition at temperatures below about 300� C., preferably in the area of 250� C., to apply the technology to amorphous silicon substrates.
Prior known processes for depositing silicon on a substrate have one or more deficiencies which render them unsatisfactory or inoperative for the selective deposition of silicon on predetermined areas of a substrate, at low temperatures of 300� C. or less in a conventional PECVD system using only hydrogen and silane gas plasma without requiring the use of fluorinated gas species.
The present invention relates to a novel plasma enhanced chemical vapor deposition (PECVD) process for separating the deposition and surface modification reaction by time modulating the flow of silane gas into a plasma zone receiving a continuous flow of hydrogen gas, to alternately deposit and modify silicon layers on a variety of surfaces, such as on a molybdenum or ITO (indium tin oxide) surface during the production of thin film transistor (TFT) semiconductor devices. The process is characterized by separating the deposition and surface modification reactions of the PECVD process by time modulating the flow of the silane gas into a hydrogen containing plasma within a deposition chamber associated with an appropriate substrate at low temperatures, preferably below about 300� C., to cause the deposition of a thin layer of silicon on said surface, or selectively on only predetermined desired areas of said surface, during the introduction of the pulses of silane gas, and to cause surface modification of the silicon film deposit at alternate time periods when the silane gas flow is discontinued to the deposition chamber, to permit the hydrogen gas to affect the surface in any one of several different ways which depend upon the nature of the surface(s) being treated and the duration of the alternate periods.
According to a preferred embodiment, silicon can be deposited selectively on desired areas such as areas of c-silicon, molybdenum, tantalum oxide, ITO, 7059 glass, plasma deposited microcrystalline silicon or polycrystalline silicon areas of a substrate while not accumulating on other unintended areas of different composition, such as fused silica, plasma deposited silicon nitride, 7059 glass, thermally-deposited silica, etc., by limiting the duration of the silane pulses, and/or by controlling the duration of the alternate time periods, when the substrate is treated with hydrogen, to cause the hydrogen to prevent accumulation of the silicon deposit in the unintended areas. In addition it is clear that the hydrogen affects the surface of the silicon deposit in the intended areas to enhance subsequent silicon deposit and to induce the formation of polycrystalline grain structure. Thus, the present modulation process enables the deposit and accumulation of thick layers of silicon on predetermined selected areas of a substrate while preventing the accumulation of silicon on adjacent areas of different composition.
FIG. 1 is a graph illustrating the average layer thickness per deposition/hydrogen exposure cycle plotted against the silane pulse or deposition time.
FIG. 2 is a graph illustrating the effects of the duration of the alternate hydrogen plasma exposure time on the thickness of silicon deposit on adjacent surface areas of c-silicon and fused silica.
FIG. 3 is a comparative absorbance graph illustrating the infrared radiation absorbing spectra of two silicon films deposited on a crystalline silicon substrate, film (a) being deposited under continuous, non-selective gas flow conditions, and film (b) being deposited using pulsed silane gas under selective deposition conditions according to the present invention.
The present invention involves the discovery that silicon films can be deposited and modified on predetermined surface areas of a substrate, and that, according to a preferred embodiment, selectivity can be obtained and controlled, relative to different substrate composition areas, by exposing the substrate to a continuous hydrogen plasma into which silane gas is modulated, and by controlling the gas modulation durations to limit the silicon plasma deposition time to one which produces selective deposition of silicon in predetermined first areas with no deposition or etchable deposition in adjacent areas of different composition, and to provide alternate hydrogen plasma durations which cause the hydrogen to react with and modify the deposited silicon as a microcrystalline silicon layer while preventing the accumulation of any silicon layer on the adjacent areas of the substrate. Thus, the deposition reaction of the silicon and the modification reaction of the hydrogen are separated and independently controlled by maintaining a continuous hydrogen plasma in the deposition chamber, and time-modulating the duration of introduction and non-introduction of silane gas to said chamber for predetermined periods which produce selective deposition and accumulation of a silicon coating on predetermined isolated areas of a multi-area substrate present in the deposition chamber, at low temperatures, such as below about 300� C., and in the presence of suitable RF power, such as between about 20 and 100 W. This produces sequential, independently-controlled deposition and surface treatment or surface modification steps, providing a new degree of control, at the atomic level, to the PECVD process.
By varying the modulation conditions, film deposition, modification and selectivity can be controlled on a variety of substrate surfaces, including crystalline silicon (undoped or n-type crystalline silicon which is doped with phosphine), fused silica, plasma-deposited silicon dioxide and silicon nitride, indium tin oxide, tantalum oxide, metals such as molybdenum, and other surfaces. For example, deposition can be selectively produced on surface areas of c-silicon while being avoided on adjacent surface areas of 7059 glass and thermally deposited silicon dioxide, or can be selectively produced on surface areas of different compositions such as 7059 glass while being avoided on adjacent surface areas of PECVD silicon dioxide, which adjacent areas can be patterned by standard techniques on a variety of substrate surfaces. The present process enables the use of a relatively low temperature, below about 400� C. and preferably about 250� C., which is advantageous in silicon device technology. A selective process is attractive for device fabrication, for instance, to form self-aligned structures to eliminate patterning and etching steps, or for the fabrication of thin film transistor (TFT) structures, where complete device formation, including contacts, semiconductor and gate dielectric layers, can be produced in a single PECVD pump-down operation.
The present process may be conducted in association with a conventional PECVD parallel plate reactor having electrodes of 28 cm. diameter (615 cm2 area and 2 cm. spacing. The deposition chamber includes a radial gas flow system to which hydrogen and silane gases are fed through a conduit containing a mass flow controller. A valved gas line is connected to the conduit, downstream of the flow controller, to supply a modulated flow of silane gas to the conduit without interfering with the continuous flow of the hydrogen gas and without causing gas bursts. The silane gas valve preferably is an electrically-controlled solenoid diverter valve, associated with a variable electronic timing circuit, to permit the automatic supply of silane gas to the conduit and deposition chamber for predetermined, variable durations depending upon the nature of the multi-area substrate being treated. During alternate non-supply durations the silane gas flow is diverted to a process pump.
The RF power supply to the electrodes may also be programmable to allow for time modulation thereof. For example, it is preferred to expose the substrate to a hydrogen plasma pretreatment at a RF power supply of from 80 to 400 mW/cm2 (115 W to 570 W) for from 1 to 10 minutes before film deposition is initiated. The pretreatment may possibly remove contamination from the substrate. During the deposition cycles the RF power supply is maintained between about 20 and 100 Watts with a pressure typically about 400 m Torr.
Conditions for film deposition will vary somewhat depending upon the identity of the compositions of the different surface areas of the substrate being treated. Typical conditions include a hydrogen gas flow rate of 100 standard cubic centimeters per minute (sccm), a silane (SiH4) gas flow rate of about 5 sccm, a substrate temperature of about 300� C., RF power of about 20-100 Watts and pressure of about, 300 m Torr. The hydrogen gas flow to the deposition chamber is continuous and the silane gas flow to the deposition chamber is intermittent for predetermined on- and off- durations depending upon the substrate compositions.
FIG. 1 of the drawings illustrates the treatment of a substrate comprising adjacent areas of n-type crystalline silicon (111) and fused silica, more specifically a substrate having a base layer of the c-silicon covered by a surface layer of plasma-deposited silica on which trenches with dimensions down to 10 microns were patterned, by conventional photolithographic or other means, to expose the c-silicon base layer. As discussed above, the hydrogen gas flow was continuous and the duration of the silane flow (deposition time) was varied between 1 second and 50 seconds at 50 second intervals during which the substrate was exposed solely to the hydrogen plasma.
Film thickness was measured using a stylus profilometer. Scanning electron microscopy (SEM) was used to observe selective deposition in the trench samples, and Raman scattering and infrared absorbance were performed on relatively thick film (>0.5 microns) deposited on c-Si surfaces.
FIG. 1 shows the average layer thickness per deposition/hydrogen exposure cycle, plotted versus silane pulse (deposition) time. The RF power was 100 W, and the hydrogen exposure time was fixed at 50 seconds. Before deposition, the surfaces were exposed to 500 W H2 plasma for 1 minute. As shown in FIG. 1, when the deposition time is less than four seconds, no deposition is observed on either the c-Si or the silica areas. As the deposition time is increased, a silicon film is deposited on c-Si surface areas, but not on fused silica surface areas. For deposition times greater than about 19 seconds, with fixed hydrogen plasma time, a silicon film with uniform thickness is deposited on all exposed surfaces. The number of deposition cycles used was sufficient to deposit more than 1000 A on the c-Si surface. Using conditions for selective growth, films greater than 0.5 um thick have been deposited on the c-Si surface areas, with no visible film accumulation, as determined from optical transmission and SEM, on the fused silica surface areas. The linear increase in the deposited thickness indicates that the growth rate is constant, about 2.8 A/sec., on crystalline silicon surfaces, and the non-zero intercept is evidence of etching of the deposited layer by the hydrogen plasma. The transition from selective to non-selective conditions in FIG. 1 occurs at a layer thickness of approximately 34 A. We find that this transition layer thickness is not unique but depends on the conditions and duration of the hydrogen plasma exposure cycle.
FIG. 2 illustrates the effects of the duration of the hydrogen plasma cycle on the selectivity and thickness of silicon on adjacent surface areas of c-silicon and fused silica. The silane flow-time was 10 seconds per cycle.
Short H2 plasma exposure times result in a uniform silicon film on all surfaces. As the H2 plasma exposure time is increased, the film deposition thickness per cycle on crystalline silicon does not change significantly, while the deposition rate on fused silica decreases dramatically. When the hydrogen exposure time is high enough, above 40 seconds, no film accumulation is detected on fused silica substrates.
Process conditions and film thicknesses for a typical selective PECVD process are:
______________________________________H2 Flow: 100 sccmSiH4 Flow: 5 sccmSilane ON time: 10 sec.Silane OFF time: 50 sec.Substrate Temp.: 300� C.RF Power: 100 Watts (68 mW/cm2)Pressure: 400 mTorrNumber of cycles: 180Total dep. time: 3 hoursSubstrate: Film Thickness:fused silica not detectedc-Si 4900 A______________________________________
By adjusting the deposition conditions, including the silane ON and OFF times, this process can be used to selectively deposit on a variety of surfaces including Tantalum oxide, 7059 glass and metals, as discussed hereinbefore.
The pulsed gas process is believed to take advantage of differences in the chemical nature of the substrate to limit the growth of stable nucleii on less receptive surfaces. Limiting the silane flow allows a very thin layer of deposited silicon to be exposed to a hydrogen plasma for a controlled amount of time. The hydrogen plasma exposure appears to influence surface reconstruction and crystalline formation, and removes silicon atoms bonded in less stable configurations at the surface. The selectivity may result from differences in the nucleation on the different substrate surfaces, and the interaction of the deposited nucleii with hydrogen, where only the most stable nucleii will remain after the hydrogen plasma exposure cycle. Raman spectra of the deposited silicon show evidence of crystalline domains in the films. The selective deposition process may allow for control of the grain size, and may result in large grain polysilicon films deposited at low substrate temperatures.
The infrared absorption for two films deposited on c-Si substrates are shown in FIG. 3 of the drawings. Film (a) is deposited under continuous, non-selective gas flow conditions, and film (b) is deposited according to the present invention, using pulsed silane gas under selective deposition conditions. The thickness of both films is about 0.5 micron and the absorbance scale is normalized for thickness. The absorption peaks at 2100 cm-1 and 630-1 have a full width of 60 cm-1, significantly narrower than similar modes in hydrogenated amorphous silicon. The integrated absorption of the 630 cm-1 mode is similar for the two films. For the film deposited with the pulsed gas process, the 2100 cm-1 mode is larger and the shoulder at 2000 cm-1 is reduced compared to the film produced with continuous gas flow. Raman absorption measurements show a strong absorption at 520 cm-1, indicative of micro- or poly-crystalline structure in the films.
A variety of other materials were investigated for selective deposition, including plasma deposited silicon dioxide and silicon nitride, 7059 glass, indium tin oxide, tantalum oxide and molybdenum. Selectivity can be tuned on many of these materials by controlling the gas modulation times. The chemical composition of the substrate, cleanliness and surface pretreatment all influence the conditions for selectivity. For example, by tuning the pretreatment conditions and gas modulation times, a deposition can be made on 7059 glass, while no film is deposited on plasma or thermal SiO2 surfaces Low temperature glass (7059) contains a relatively high concentration of contaminants, and it appears that contaminant atoms at the surface enhance the nucleation of silicon.
Insight into the influence of substrate chemistry and film precursors on nucleation of amorphous and microcrystalline silicon-hydrogen films in PECVD processes has recently been obtained from in-situ ellipsometry. The size of the nucleii and the density of nucleation sites are found to be sensitive to process conditions and substrate chemistry and a distinct transition from clustered nuclei to uniform film coverage has been observed. The present observations of selective deposition are consistent with the nucleation being dependent on the substrate surface chemistry; the different nucleii on the various substrate surfaces are effected differently by the hydrogen plasma treatment. The non-zero intercept of the data in FIG. 1 illustrates that the etching effect of the hydrogen plasma plays an important role in achieving selective deposition. The sharp transition from zero growth (selective deposition) to continuous film growth on SiO2 surfaces occurs at a layer thickness of approximately 34 A. The transition layer thickness is not unique but depends on the conditions and duration of the hydrogen plasma exposure cycle. This is consistent with a hydrogen plasma etching process in which the etch rates are dependant on film nucleation and determined by the substrate surface. Specifically, material deposited on SiO2 is etched at a faster rate than films deposited on c-Si. The data in FIG. 1, illustrates that at 100 W RF power, the etch rate is 0.79 A/sec for material on SiO2 and is 0.22 A/sec for material on c-Si with a deposition rate of 3.0 A/sec during the silane pulse time. Similar results at 20 W RF give etch rates of 0.28 and 0.06 A/sec for films on SiO and c-Si respectively, with a growth rate of 1.5 A/sec. These results and the selectivity on other substrates show that lower etch rates may be related to a higher degree of crystallinity in the initial stages of film deposition on crystalline surfaces.
The role of hydrogen on the nucleation and formation of microcrystalline silicon is not completely clear. The present process shows evidence for etching, but other models, including long range relaxation, or "chemical annealing", as well as enhanced mobility of surface species by hydrogen coverage cannot be ruled out. Based on scanning tunneling microscopy analysis, it appears that atomic hydrogen can act to reconstruct an amorphous silicon surface and lead to the formation of crystalline domains of variable grain structure, as can be controlled by the duration of silane modulation and other conditions.
The present process is useful in connection with the production of thin film transistor (TFT) semiconductor devices to avoid the necessity of using a patterning step to etch n-type doped silicon contact layers. For example, isolated molybdenum-coated indium tin oxide (ITO) electrode areas may be formed on a 7059 glass substrate by conventional photolithographic patterning steps. Then the n-type silicon layer may be applied according to the present process and selectively accumulates over the molybdenum areas while the 7059 glass is not receptive and/or retentive thereof.
Thereafter, successive blanket layers or overall coatings of undoped amorphous silicon, and silicon nitride or silicon dioxide (gate dielectric) are applied over the entire substrate, without breaking vacuum. Molybdenum or aluminum (gate metal) are then applied to form the TFT semiconductor device. The resulting devices have low off currents and low contact resistance, demonstrating that the selective deposition process is viable for device applications.
It will be apparent to those skilled in the art that the novel preferred selective process of this invention is applicable to the production of a wide variety of semiconductor products and related products in which it is desired to apply silicon to only predetermined selected areas of a substrate having adjacent surface areas of different compositions having different receptivity and retentivity for silane plasma in the PECVD process, using only hydrogen and silane gases.
It will also be understood that while the primary gasses that are used in accordance with the present invention are hydrogen and silane; various amounts of other gasses may be present for various processing reasons, including halogenated species, but these other gasses are generally not required.
It is to be understood that the above described embodiments of the invention are illustrative only and that modifications throughout may occur to those skilled in the art. Accordingly, this invention is not to be regarded as limited to the embodiments disclosed herein but is to be limited as defined by the appended claims.
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