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US 4401691 A Abstract Disclosed is a process for eliminating the migration of nitrogen or nitrogen hydrides (e.g., NH3) to a Si-SiO2 interface site during silicon-nitride-masked oxidation--using an HCl additive to a pyrogenic oxidizing medium to react with the nitrogenous entity and so prevent formation of silicon nitride at this site [e.g., in a die zone intended for later reception of a precise oxide layer]--this improved technique resulting in increased yield, improved reliability and better electrical parameters.
Claims(18) 1. In an improved technique for forming silicon oxide films with a prescribed wet oxidizing medium at a prescribed processing temperature upon a substrate, this substrate including a silicon constituent and SiO2 film portions thereon, this technique being susceptible to formation of nitrogen interface compounds at the interface of said substrate and the overlying SiO2 layer, a cation portion of said interface compounds being apt for combination with prescribed anionic material to form a prescribed vapor product at said processing temperature, the improvement step comprising: adding sufficient of at least one additive reagent including
said anionic material to so combine with said cationic material and form said vapor compound at said processing temperature whereby to eliminate formation of said interface-compounds and to facilitate the dissipation of said vapor compound product. 2. The combination as recited in claim 1, wherein said anionic material comprises chlorine; wherein said vapor-compound comprises a chloride of nitrogen, and wherein said interface-compound comprises a "white ribbon" strip including nitrogen.
3. The combination as recited in claim 2, wherein said additive reagent comprises hydrogen chloride and wherein said vapor compound comprises ammonium chloride.
4. The combination as recited in claim 3, wherein said reagent is added to a pyrogenic oxidizing medium.
5. The combination as recited in claim 4, wherein said medium is essentially comprised of steam.
6. The combination as recited in claim 1, wherein said oxide film is to be grown, pyrogenically, on prescribed first zones on a silicon wafer substrate; wherein each said first zone is formed adjacent a prescribed respective second zone on said substrate, each such second zone including an SiO2 layer and an overlying nitride layer such that when these layers are later removed, white ribbon "strips" formed during the growing of said oxide film are prone to be produced.
7. The combination as recited in claim 6, wherein said thin oxide film comprises from several hundred A� to several um. SiO2 and wherein ultra-thin "gate films" of SiO2 are to be grown on said second zones defining gate zones.
8. The combination as recited in claim 6, wherein said oxide film is grown to comprise SiO2 field-oxide formed to include "beak" marginal portions on edge of the respective adjacent nitride mask layer coming closely adjacent the respective nearby insulation-oxide-layer placed over the nearby second zones, the associated nitride mask layer being formed to extend beyond its respective insulative layer to thereby over-hang the associated "beak" portion of the adjacent field layer; whereby said "white ribbon strips" will be seen to form at the wafer/insulating layer interface just beyond the nearby "beak" portion.
9. The combination as recited in claim 8, wherein said additive reagent comprises hydrogen chloride and wherein said vapor compound comprises ammonium chloride to a pyrogenic oxidizing medium.
10. The combination as recited in claim 9, wherein said medium is essentially comprised of steam, the oxidation forming at about 950� C. or more.
11. The combination as recited in claim 10, wherein said SiO2 insulating layer is first grown on said second zones of the wafer substrate to at least several hundred A�; then silicon nitride mask layers are applied over, and beyond, said insulating layers to a comparable thickness; then said insulating SiO2 layer is "thickened" pyrogenically using said steam--HCL medium, except adjacent said second zones where said "beak" formations develop; then said mask layers are removed, as well as the SiO2 layer in said first zones; and, finally, an ultra-thin gate oxide film is pyrogenically grown on said second zones.
12. In an improved process for growing SiO2 pyrogenically in a wet oxidizing medium on prescribed first surface areas of an Si substrate while leaving adjacent second surface areas of the Si substrate free of nitride residue, these second surface areas being temporarily covered with SiO2 layer and this, in turn, with a nitride layer; those layers to be removed after the subject process and the second Si areas left free of nitride residue, the improvement therein of: adding a portion of hydrogen chloride to the oxidizing medium.
13. An improved method of oxidizing a silicon-rich substrate wherein a wet oxygen flow is used, while the substrate is heated, and wherein nitrogenous materials are present and/or evolved which tend to form "white ribbon", wherein:
a portion of hydrogen chloride is added to the oxidizing medium, sufficient to combine with such nitrogenous materials and substantially reduce, or eliminate, formation of such "white ribbon". 14. The combination as recited in claim 13 wherein, at the prevailing temperatures and related conditions, said portion of hydrogen chloride is added to so combine with said nitrogenous materials to produce a prescribed nitrogenous vapor product.
15. The combination as recited in claim 13 involving the pyrogenic oxidation of said substrate wherein the substrate includes protected surface portions covered with a nitride mask layer and adjacent non-masked surface portions; wherein the oxidation is conducted to grow a thick film of silicon oxide on said non-masked portions of the substrate surface and wherein this is to be followed by removal of said mask layer and formation of a precision-thickness oxide film on said protected surface portions, said "white ribbon" being prone to form on said protected surface portions under said mask layers during pyrogenic growth of the thick film.
16. The combination as recited in claim 15 wherein an SiO2 layer is disposed on said protected surface portions under said mask layer; wherein said "white ribbon" is comprised of a nitride of silicon; wherein said pyrogenic oxidation induces the migration of free nitrogen materials to the "white ribbon" sites, under the edge of said mask layers; and wherein sufficient HCl is added to the oxidizing medium to so combine with said nitrogenous materials as to eliminate "white ribbon" problems.
17. The combination as recited in claim 16 as adapted to an overall process for forming thick field oxide on the non-masked portions and, then, forming ultra-thin "gate oxide" on the protected portions of a silicon-rich integrated circuit substrate, with masking layers of SiO2 covered with a nitride formed on said protected portions and removed before formation of said "gate oxide" there.
18. The combination as recited in claim 19 wherein said pyrogenic oxidation is preceded, first, by formation of an SiO2 film entirely across said wafer substrate; then, by formation of said mask layers; and wherein said pyrogenic oxidation is so carried out, using steam at about 950� C. as to "thicken" this SiO2 film except on said protected surface portions beneath said mask layer, whereby to form said "gate oxide" to a precise, uniform thickness on the order of several hundred A� to a few thousand A�.
Description The present invention relates generally to improvements in the manufacture of integrated circuit devices, and more particularly to improved techniques for developing oxide films on integrated circuit substrates. Workers in the art of making integrated circuit devices are well aware of the need for optimal techniques for developing silicon oxide films on an integrated circuit (wafer) substrate. This invention is intended to provide improved techniques for growing a silicon oxide film on such substrates. Silicon dioxide has played a major role in the fabrication of silicon [micro-electronic] devices and their operation since approximately 1958. If a wafer of silicon is heated in an atmosphere of oxygen or water vapor, a film of silicon dioxide is readily formed on its surface. This film is hard, durable [e.g., softening about 1400� C.] and it firmly adheres to the silicon substrate. It makes an excellent electric insulator and is very convenient to use in the fabrication of integrated circuits, serving as a mask for the selective introduction of dopants. Convenient thicknesses of silicon dioxide can easily be grown in an oxidizing atmosphere at temperatures on the order of 1000� to 1200� C.--thickness being rather precisely controlled by selecting the appropriate time and temperature of oxidation. For example, a 0.1 micrometer layer of oxide will grow on a Si wafer exposed to an atmosphere of pure oxygen for about one hour at a temperature of 1050� C. [substituting steam, for the pure oxygen, will grow a layer five times as thick]. As workers well known, such pyrogenic oxidation is popular for growing such precision silicon dioxide films; it is very convenient and inexpensive to use (several hundred wafers can be simultaneously oxidized in a single run). More particularly, workers are aware that during the preparation of certain types of integrated circuits, the silicon wafer substrates are oxidized to establish an SiO2 film adjacent silicon nitride mask areas (e.g., to place a thick "Field Oxide" there). It has been found that, in the course of growing such an oxide film (pyrogenically), a deleterious "white ribbon" effect can commonly occur injecting an undesired silicon nitride film under their mask areas. Such "white ribbon" films are commonly formed at a silicon/silicon oxide interface, where an SiO2 layer (thermal buffer) underlies the nitride mask during pyrogenic oxidation accompanied by the presence of nitrogenous products (e.g., believed to include ammonium evolved from the nitride mask; see article by Kooi, et al. page 1117 et seq., Volume 123 of Journal Electro-Chemical Society, 1976). Such "white ribbon" films have become familiar as potentially disadterous to device yield. As explained below, they are believed to represent the reaction product of ammonium with silicon and constitute a thin silicon nitride film that is quite difficult, expensive and inconvenient to remove [e.g., a special etching might be carried out, but is contra-indicated because of the added time and expense it would involve and because it would likely damage the SiO2 film and the Si substrate.] It is believed, though not certain, that the nitrogen constituent of the "white ribbon" film finds its way to the film-site by diffusing through the silicon oxide to reach the silicon substrate. Nitrogen is readily diffusible through SiO2 at the prevailing high ambient temperatures, and ammonia gas would appear to be more effective in producing this nitride than molecular nitrogen. However, it is not certain whether these and/or some other "N entity" are operative. The resultant nitride film has a "masking effect" against oxidation and thus will interfere with the superposition of an oxide layer. For instance, a "white ribbon" spot will obstruct a "gate oxide" of a MOS structure, making it too thin and resulting in unacceptably low gatebreakdown-voltage and device rejection. Accordingly, it is an object of this invention to provide improved techniques for growing silicon oxide on a hot silicon substrate and to provide improved integrated circuits so coated. Another object is to grow such an oxide coating adjacent silicon nitride layers to be relatively free of undesired silicon nitride residue and the "white ribbon" effect under the nitride layer. It is a further object to provide such oxide coatings free of "white ribbons" as part of a pyrogenic oxidation and despite the presence of nitrogen and/or nitrogen compounds (especially ammoniated gas). These and other objects and related features of invention are accomplished by the improved techniques taught herein, such as by the addition of hydrogen chloride to the hot oxidizing gases used to grow SiO2 --sufficient HCl to combine with any nitrogenous constituents present,--especially where the substrate includes a pure silicon surface adapted to receive a following precision thickness film, and more especially where this Si surface is covered by an SiO2 layer and where "white ribbon" strips are prone to form at the Si/SiO2 interface. This also facilitates removal of gaseous products (of the HCl-ammonia reactions) from the oxide-growth zone. Also taught are techniques associated with the pyrogenic oxidation of a silicon substrate on which silicon nitride layers are superposed, on intervening SiO2 layers, wherein nitrogen and/or nitrogen compounds are prevented from migrating to the Si-SiO2 interface and forming silicon nitride films there; and particularly where sufficient hydrogen chloride is added to the oxidizing medium to react with free nitrogenous constituents present and so prevent such formation of silicon nitride at this interface; and further to convert such free "N entities" to a gaseous ammonium chloride product which is readily removed from the reaction zone at prevailing process temperatures. In a preferred embodiment, the invention involves an improved technique for preparing such an Si/SiO2 interface for removal of SiO2 and, formation of a thin, controlled-thickness silicon oxide film there, without "white ribbon" interference--and as involving prescribed pyrogenic oxidizing media at a prescribed processing temperature upon a prescribed silicon wafer substrate (this substrate being susceptible to formation of "white ribbon compounds" at its interface with a silicon oxide film and a "cation portion" of said compound being apt for combination with a prescribed anionic material), this technique being adapted to generate a prescribed vapor compound at said processing temperature and conditions--the technique involving the addition of sufficient of at least one additive reagent including said anionic material to so combine with said cationic material and form said vapor compound at said processing conditions--whereby to eliminate formation of said "white ribbon" interface compounds and to further facilitate the dissipation of the vapor compound product. In a particular useful form, this anionic material comprises chlorine and the vapor-compound comprises a chloride of nitrogen, with the white ribbon consisting of ultra-thin interface strips of a nitrogen compound. It is preferred that the additive reagent comprise hydrogen chloride and that the vapor compound generated comprise a gaseous chloride of nitrogen, such as ammonium chloride particularly. In a preferred form, the thin oxide film is to be pyrogenically grown (from a few hundred to a few thousand A�) on prescribed first surface zones of a silicon wafer substrate, with each such zone disposed adjacent respective second zone including silicon oxide--these first zones, in turn, being protectively covered by a silicon nitride mask layer--the "white ribbon strips" being prone to form in the first zones of the substrate, under the mask layer, such as to be left as a troublesome "residue" once the mask layers are removed and prior to growing said thin oxide films. Techniques according to this invention are especially useful in preventing white ribbon from interfering with the ultra-thin (UT) oxide films to be grown in active gate zones of a silicon wafer for MOS integrated circuits, particularly where, as mentioned, a nitride mask layer overlies an intervening insulation layer of silicon oxide in the gate zone and these mask and insulation layers are to be removed prior to growing such UT films there. This is particularly true when an ultra-thin SiO2 gate oxide is to be grown only after a first layer of silicon oxide is placed upon the entire wafer, followed by placement of the nitride mask "covers" over each gate zone and extending therebeyond--this being followed by a "field oxide growing" step wherein the original silicon oxide film is thickened, except under the nitride "covers" where, however, it extends a bit under the margin of these covers, and is gradually attenuated in thickness, to form a "beak"-- with the mentioned white ribbon spots formed on the substrate, in the gate zones and just beyond these "beak" portions. Such methods according to the invention have been found particularly effective when used for such purposes in growing oxide pyrogenically (preferably using steam at about 950� C. or more) wherein a first silicon oxide layer (of about 1400 A�) is grown. Then nitride mask layers (about 1500 A�) are applied, and then the field oxide is expanded (to about 1.1 um thickness; HCl added to steam at 950+�C.) and then the nitride "covers" removed along with the underlying silicon oxide layers overlying the gate zones so that the ultra-thin "gate oxide" may then be pyrogenically grown (on the order of 1000 A� thick and free of "white ribbon"). These and other features and advantages of the invention will be better appreciated by workers as they become familiar with the following detailed description of presently preferred embodiments, these being considered in conjunction with the accompanying drawings, wherein like reference symbols denote like elements: FIGS. 1-6 are sectional idealized illustrations indicating the wafer treatments and associated layering sequences developed during the execution of methods embodying the invention. As an example of how "white ribbon" is typically evolved, and of how techniques according to the invention can ameliorate this condition, the following description is presented, in conjunction with FIGS. 1-6. Workers will recognize this as involving the preparation of MOS integrated circuit devices --in particular the growth of a thick SiO2 layer ("field oxide") on a silicon wafer. Here, and elsewhere, it may be assumed that, except as otherwise mentioned, conventional techniques, materials and apparatus are employed to render conventional results. As indicated in FIG. 1 this may be understood as involving a silicon wafer substrate C--and particularly, a portion thereof adjacent an "active gate" area ("aa") flanked by adjacent "field" areas ("bb", "cc"). In general it should be understood that an Si3 N4 mask layer A covers the gate area and that a thick SiO2 "field oxide" layer B is to be grown in the field zones ("bb", "cc") flanking gate zone "aa"--then, the mask to be removed and a thin "gate oxide" grown in the gate zone. FIG. 1 shows the active gate area "aa" also covered insulating SiO2 layer B [e.g., about 1400 A�; this layer being, in turn, covered by the "masking" layer, A, of silicon nitride, here, preferably about 1500 A� of Si3 N4 ]. Silicon nitride layer A will be understood as functioning conventionally as a mask to prevent oxidation in active area "aa". Silicon oxide layer B serves to prevent the formation of dislocations which might be induced in the silicon substrate C if it were heated in direct contact with the nitride layer. (Thermal stress differential ameliorated by layer B). Oxide layer B will also be understood as influencing the shape of the "sunk-oxide" pattern, discussed below. Preferably, as illustrated, layers A and B are extended a bit beyond active zone "aa" [see dimension aa']. As depicted schematically in FIG. 2, a relatively conventional pyrogenic oxidation is next invoked to grow the thick "field oxide" and produce the "sunk oxide" formation [see nitride layer A' depressed into wafer C above zone "aa"]. Here, a steam oxidation is preferred [10 hours at 950� C. in wet oxygen atmosphere: dew point: 95� C.]. This thickens the SiO2 film B' over the "field" areas "bb", "cc" [see layer B', with a maximum thickness "dd" on the order of about 1.1 um., preferably; narrowing to a "beak-like" point, or transition, under mask A' where it is joined with the original thin SiO2 layer over gate region "aa"]. The presence of original oxide layer B (FIG. 1) will be understood as influencing the shape of this "sunk-oxide" pattern, while a lateral oxidation effect produces the smooth beak-like point under the mask edge (where the mask is "lifted up"). As an example of such pyrogenic oxidation, consider the following: Several hundred silicon wafers (each approximately 3" diameter, about 200 um. thick) are loaded into receiving slots in several (quartz) "boats", with a few millimeters between adjacent wafers. The boats are injected into a high temperature furnace consisting of a conventional elongate quartz tube surrounded by a cylindrical heating element with means for injecting, and for removing, prescribed streams of process gases. With the boats of wafers loaded into the open end of the tube and slowly pushed into the hottest portion, oxidation may begin [the initial tube atmosphere when the boats are so loaded consists principally of N2 with a little O2, about 7%]. The temperature in the tube's process zone is typically closely controlled [e.g., to 1� C. or better]. Often the entire procedure is computer-controlled--e.g., with a small "process control computer" monitoring furnace temperature, directing the insertion and withdrawal of boats, and controlling the internal atmosphere and other accessories of the furnace. Formation of nitride "white ribbon" under nitride mask: FIG. 3 is an enlarged partial version of FIG. 2 and schematically depicts what is believed to be the mechanism involved in forming of the nitride "white ribbon" layers r at the interface of silicon oxide layer B' and the top of silicon wafer C in zone "aa" (--where the ribbon underlies mask A', adjacent the mask edge and close to the point of the "oxide-beak"). For instance, nitride masking layer A', and the underlying (1400 A�) oxide layer are typically removed (stripped by etching) as indicated schematically in FIG. 4--however, leaving the "white ribbon" nitride strips R,R' as a residue on wafer C in the critical active zone "aa". That is, the conventional treatments (e.g., etching) for removing the nitride mask and the underlying oxide unfortunately, leave the ribbon segments R, R' unaffected [and if a special "ribbon-etch" were used it would inflate production costs and likely degrade the wafer and SiO2 films]. Normally, the "gate oxide" layer should be formed to a very precise thickness over the active (gate) zone (e.g., see conventional gate oxide film B"g in FIG. 5, shown undisturbed by "white ribbon"). As workers know, it is crucial to good MOS gate operation to form this oxide layer B"g to a very precisely controlled, highly uniform thickness. And this problem is compounded by the fact that oxide B"g is so ultra-thin (ordinarily only about 1000 A�). But the "white ribbon" upsets all this and reduces the effective thickness of the gate oxide--as indicated in FIG. 5A, not only by interposition of the reduced-resistivity ribbon thickness R, R', but also by causing less oxide to grow above the ribbons (note depressions D, D' above ribbons R, R' in FIG. 5A). These depressions are, evidently, formed because "free silicon" is depleted at the ribbon sites (i.e., little or no Si available for forming SiO2 above the ribbons because it is tied-up in nitride form). Workers will readily appreciate how disastrous such a two-fold reduction in resistance and dielectric strength (at ribbon sites) can be. Workers will recognize that the presence of "white ribbon" is entirely unacceptable for such an embodiment since the white ribbon layers will necessarily prevent a proper critical-thickness "gate oxide" layer from being formed in this active zone "aa" and will interfere with formation of a precise, ultra-thin "gate oxide" film (on zone "aa") and degrade desired film properties. That is, as indicated schematically in FIG. 5A, it will be understood that ultra-thin "gate film" B"g (e.g., only about 1000 A� nominal thickness SiO2 grown during about 45 minutes oxidation at about 1100� C.) would be reduced in thickness and will exhibit obvious weakened, reduced-thickness areas D, D' above white ribbons R, R'. These weakened areas can be expected to have such a radically reduced resistance and thickness across the gate film and create problems of low gate-breakdown-voltage and device failure, as workers in the art will readily appreciate. Any further processing of the device is beyond the scope of this discussion, but might include conventional MOS transistor formation [e.g., depositing a polycrystalline silicon film; defining gate, source and drain areas, etc.]. Pecularities of "white ribbon": While one cannot presently be certain, it appears that the silicon nitride "white ribbon" is produced, generally speaking, when the hot oxidizing medium reacts with any silicon nitride present [e.g., with layer A, FIGS. 1 and 2]. This probably produces [among other things] ammonium, (and possibly nitrogen and other nitrogen compounds) and SiO2 constituents. The nitrogenous reagents thus formed could include ammonia gas or some ammonium compound (and other hydrides of nitrogen), and/or pure (atomic) nitrogen. The nitrogenous reagents are believed to migrate to the Si/SiO2 interface to produce the ribbon nitride film [i.e., Si3 N4, which, as mentioned, cannot readily be removed]. As workers know, this "white ribbon" is readily visible (usually with an optical microscope; hence, it's name) and might, for an embodiment like the foregoing, be about 1 um. (10-6 meter) wide. The ribbon location suggests a narrow region of non-oxidized silicon just beyond the point of the "oxide-beak"; this supports the theory of migration of nitrogen (or its compounds) to that site (see site II, FIG. 3). Workers will remember that the silicon substrate in this active gate zone (adjacent site II) is covered only by a relatively thin Si3 N4 oxidation-mask layer A', Also, some silicon nitride is presumably formed in the ribbon area [at site II, the Si/SiO2 interface] during the local oxidation process above-mentioned. This nitride may, of course, be pure Si3 N4 and/or may comprise related nitrogen compounds. Various theories have been offered to explain the "white ribbon" effect "e.g., see above cited article, Kooi, et al.]. One theory is based on the transfer of (free) nitrogen from the nitride mask layer A [FIGS. 1 and 2, e.g., from site I in FIG. 3] to the Si/SiO2 interface [as indicated at site II in FIG. 3, for instance]--pure N2 readily passing through SiO2 layer B'. It will, of course, be assumed that the diffusion of steam, normally, through layer B' allows it to interact with the silicon of wafer C to produce SiO2 plus H2, there, conventionally [see path i, FIG. 3]. In addition, it is theorized that a "lateral" diffusion (of N2, etc.) takes place under the edge of mask A' [see path ii], so that when the hot steam reaches a given point along the interface between the mask and SiO2 layer B' [site I or, at least some of it], it will react with the Si3 N4 to produce SiO2 and NH3 (thus helping to form the ultimate beak-shaped pattern indicated--while also oxidizing silicon from substrate C, as for path i). This oxidation of the nitride layer A' will likely occur not only at the top side of layer A' but also on its underside (under the mask edges, there forming NH3 and/or nitrogen atoms or some other NH compound). And, the reactive nitrogen (or N compounds) so formed is assumed to diffuse relatively easily through the SiO2 layer to reach the Si wafer C along the active gate zone [that is, proceeding along path iii to site II, FIG. 3] and form the white ribbon there. Now, at the outer edge of mask A', it is assumed that little or no Si3 N4 is formed because of the competing oxidation reaction: of Si with hot H2 O vapor. However, at some distance in from the edge of mask A' this will not be so--and, there (site II), Si will be free to combine with the "in-migrating" NH3 to form a Si3 N4 ribbon (--this presumably at a point where the concentration of steam H2 O drops low enough to allow the Si to so react; or, more probably, Si will react there with a mixed compound of silicon, nitrogen, oxygen and possibly, hydrogen--thus forming up the "white ribbon" film). Thus, as indicated in FIG. 4, when the nitride mask A' and its underlying SiO2 film B' will be understood as removed, the nitride ribbons R, R' nonetheless remaining [typically, up to 10 to 20 A� thick]. Consequently, the "gate oxidation" [layer B"g in FIG. 5A] will not be effective in gate zone "aa" and defective gate characteristics can be expected. At times, the white ribbon effect may not be observed because the white ribbon film is removed by an "over-etching" operation (presumably unintentional). HCl Addition: As a feature of this invention, it was discovered that adding a minor concentration of hydrogen chloride (HCl) to the oxidizing (hot steam) medium can essentially eliminate the white ribbon effect. For instance, with an embodiment like the foregoing, it is feasible to add about 2% HCl to the steam oxidant [at 950� C.] to grow the field oxide (B', FIG. 2). This has been observed to effectively eliminate "white ribbon". Presumably, this is because enough HCL is available adjacent the normal ribbon site to react with the available white ribbon formers (N2 or N compounds--these reacting in the manner of a Lewis Base with the HCl-"Lewis acid" to form NH4 CL gas--a reaction product which, happily, is readily vaporized at the prevailing ambient process temperature). While workers might be inclined to contemplate various substituents for this HCl additive (to oxidant) many will be found undesirable. For example, other halogen acids appear unsatisfactory and chlorine alone is contra-indicated as being too noxious and too corrosive to handle (as well as obviously unable to serve as the described "Lewis Acid"). The NH4 CL vapors are readily swept out of the reaction zone and thus kept from affecting oxidation [NH4 CL is vaporized at about 520� C., whereas the oxidation proceeds at about 950�-1000� C. as mentioned above]. Thus, presumably, the free nitrogenous moiety is prevented from reaching the silicon substrate C (site II, FIG. 3), and cannot form the white ribbon nitride there. The result is illustrated schematically in FIG. 6 where the stripping steps [removal of nitride layer A' and removal of SiO2 layer B' in the active gate region] will be understood as leaving the gate region "aa", atop silicon wafer C, free of any white ribbon films--and thus the subsequent growth of ultra-thin gate oxide film B"g (FIG. 5) can proceed unimpeded, unmarred by nitride anomalies or thickness attenuation. It will be understood that the preferred embodiments described herein are only exemplary, and that the invention is capable of many modifications and variations in construction, arrangement and use without departing from the spirit of the invention. Workers will understand that others have suggested various other ways of using HCl, or like additives, for other purposes, including that of forming oxide on a circuit substrate [e.g., see U.S. Pat. Nos. 3,549,411, 3,574,677, 3,692,571, Re 28,385 and Re 28,386]. Some modifications of the invention come to mind. For example, other additive agents, besides HCl, may be used for gaining the same effect. The means and methods disclosed herein are also applicable to techniques for growing related precision oxide insulator-films for other applications. Also, the invention is applicable with a plurality of such oxide films--either superposed or side-by-side. The above examples of possible variations of the present invention are merely illustrative. Accordingly, the present invention is to be considered as including all possible modifications and variations coming within the scope of the invention as defined by the appended claims. Patent Citations
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By St. Edward Enterprises LLC
Open iTunes to buy and download apps.
Not ready for iOS 8 yet.
Have your own black box/dashboard camera.
This application can be used with cars, bicycles, motorcycles, boats, anything that moves.
Record videos of your driving, track your location, speed, average speed, and distance.
Store the videos on your device.
Use the videos with all of the information to fight a traffic ticket, in case of an accident, learning purposes, or personal entertainment.
Play the videos showing all data within the application or via AirPlay enabled devices.
Share the videos via YouTube, Facebook, Email, AirPlay enabled devices, or just save them to your Photo Album.
Use the application in all portrait and landscape modes.
Use the application while playing iPod.
Introducing SoshallMap.
And more...
Requires iOS 7.1 or later, iPhone 4 or later. Not recommended for iPod touch or iPad.
Features include:
Video recording
Route tracking
Speed and Average Speed Tracking
Distance Tracking
Start time, End time, and Date of the recording
Sharing your videos on SoshallMap
Storing the recordings within the application
Playback on the device within the application
Playback via AirPlay enabled devices
Sharing via YouTube, Facebook, Email, Photo Album, and AirPlay enabled devices
Video format allows you to export the video to Photo Album
Loop recording
Option to turn off audio recording
Video resolution settings
Memory size allocation
Speed tracking either in miles or kilometers
All Landscape and Portrait mode support
Allows you to listen to iPod while using the application
And more...
What's New in Version 3.0.3
Bug fixes.
iPhone Screenshot
Customer Reviews
Completely useless as a dashcam
There is a spinning wheel while "processing" at the completion of each 10 minute video. I knew that created a gap that wasn't being recorded, but I just discovered after looking at my saved recordings that this processing time is from 4-6 minutes every time. In other words, any given 10 minute video begins 14-16 minutes after the 10 minute video before it began. This in inexcusable in a dashcam app that is meant to capture the precise moment of a traffic mishap! iPhone 4, which I'm sure contributes to the problem. But if it won't work on an iPhone 4, it shouldn't be downloadable in it!
Works perfectly on iPhone 6
the only issue I have is too high on memory for just 10 minutes = 1GB I HOPE they fixed :)
Great app
Works great using my ipad. Only difficulty was positioning the I pad on the dashboard. I am sure it would be better used with an I phone, which I do not own.
- Free
- Category: Utilities
- Updated: Aug 09, 2014
- Version: 3.0.3
- Size: 8.1 MB
- Language: English
- Seller: St. Edward Enterprises LLC
- ©St. Edward Enterprises LLC 2010-2014
Compatibility: Requires iOS 6.0 or later. Compatible with iPhone, iPad, and iPod touch. This app is optimized for iPhone 5.
Top In-App Purchases
- Cartoon effectFree
- Sketch effectFree
- Color Ray effectFree
- B & W Threshold effectFree
- Sepia effectFree
- Vignette effectFree
- Negative effectFree
- Emboss effectFree

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"The harder you work, the luckier you get." by Gary Player
Below is the poem entitled Cancer which was written by poet Erica Gould. Please feel free to comment on this poem. However, please remember, PoetrySoup is a place of encouragement and growth.
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Never in my life, Have I hated anything more. Another loved one, You have in your greedy clutches. And all I can do is watch, As you slowly take them, Away from me.


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Hill Country Salsa
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Black Beans and Mango Salad
This was on a can of Bush's black beans, and it sounds yummy and easy.
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green onion, green pepper, jalapeno, lime juice, +lime, +tequila, +flour tortillas, +sirloin steak, +vegetable oil
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Pictures of Brit Awards Show and Performances
Rihanna, Adele, Coldplay, Bruno Mars, and More Take the Stage and Win Big at the Brit Awards
The Brit Awards at London's O2 Arena were a star-studded affair with many of music's finest stepping out for the event today. Rihanna, who celebrated her 24th birthday yesterday, switched out of her gold Givenchy gown to take the stage in a white outfit while Adele showed off her vocal talents for the first time in the UK since undergoing throat surgery last year. She wore a black Burberry dress for the show and accepted her British female solo artist honor with a smile. Chris Martin and his band Coldplay took home the British group award and performed during the event. Also on hand for the Brit Awards were Florence & the Machine, X Factor alums One Direction, Formula One driver Jenson Button, Kylie Minogue, Bruno Mars, and British singer Ed Sheeran, who picked up the statue for breakthrough act. Click through to see all the pictures from the Brit Awards and make sure to check out the Brit Awards red carpet!
- Sara Gilbert welcomes a baby boy with Linda Perry — Us Weekly
- Kendall Jenner's bikini pic will make you yearn for Summer — HuffPost Celebrity
- Find out where Brad Pitt's career is going next — Lainey Gossip
- Why Cameron Diaz isn't into social media — Dlisted
- Kelly Clarkson: "I don't care if my children are gay" — ET
- James Franco explains his creative process — JustJared
- Bella Thorne kicks off her week with a new look — Hollywood Tuna
- Here's how Kanye West spent his weekend — Pink Is the New Blog
- About that "unretouched" photo of Cindy Crawford — The Superficial
- Charli XCX's new outfit will make you do a double take — The Blemish


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Situated just 3 miles from the National Botanic Gardens of Wales, Ty Castell Guest House – Home of the Kingfisher is in the small village of Nantgaredig. It is just 4 miles from the town of Carmarthen. With views over the River Towy and the gardens, the modern rooms feature a TV and tea and coffee making facilities. The en suite or private shower rooms have complimentary toiletries and a hairdryer. In the mornings, traditional cooked breakfasts are served in the bright conservatory, overlooking the countryside. Guests can also enjoy evening meals, such as homemade soup, Welsh Black steaks, and fresh fish options. The Ty Castell prepares dishes using locally sourced produce where possible. Ideally situated for exploring the Carmarthenshire and Pembrokeshire countryside, this former farmhouse is on the banks of the River Towy. The surrounding area offers numerous outdoor activities, including walking, mountain biking, and cycling. The family-run Ty Castell Guest House boasts free Wi-Fi in public areas and free private parking.


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Which is probably why we fall into that pit: When we do learn something new that really does improve our work, it's one of the best feelings in the world.
]]>I actually do have the minimum MVP defined in the private git repo. It's broken down into ALPHA, BETA, and Launch. I've been deleting items from it when I can, adding items when I must, and implementing the rest as I go.
Plus, there's a whole bunch of post-launch ideas, but I've put them on the back burner for now.
The reason for the long launch time is that I can only work on this part time and the dev we hired is in the same boat.
And feel free to doubt my coding ability ;)
]]>"Nobody doubts my coding ability, but creating a compelling game? That's a different story entirely"
I played Unknown::Values a bit last year, but didn't find it to be a very immersive experience.
]]>It's also ironic in that it's a module which caused some to doubt my coding ability!
]]>Question: do you want to hear more about my attempts to create an MMORPG in Perl, even if posts are not Perl-related?
Doesn't quite fit the "RPG" part, but it fits the "MMO" part: http://www.lacunaexpanse.com/ the backend is mostly Perl.
]]>Unless you had some geek skills, you had to play every single day, without fail, to stop your colonies from imploding. That was somewhat demoralizing to me.
]]>The video still says it's private though, and i'd say it's worth reposting this once you're sure it's working for all. ;)


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Found this video on rod brakes today:
Vintage Bicycles Styles : English Bicycle Rod Brakes - YouTube
Just thought I'd share. Kind of cool to see the different methods used in the past.
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What Houzzers are commenting on:
sliczny okragly stolik
1930s French Art Deco side table
But it's so expensive
1930's French Art Deco side table
similar look for kitchen table/ must have expansion option for dinner guests
The table finish
too small and too expensive but the right idea
grandmas table- family room
I like to think a revolutionary kitchen should have a lounge area. If you have the space, add a small round side table and a pair of comfortable chairs. This is where you enjoy reading your favorite magazine or newspaper with a cup of coffee.
1930s French Art Deco Macassar and Maple Side Table
Product Specifications
- Sold By
- Talis Lin
- Category
- Side Tables And End Tables
- Style
- Contemporary


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"Falling is easy, it's getting back up that becomes the problem."
I was already losing my hope in life. But this.. Why now? Why when I'm so low already?
When I was younger, I had so much anger. For what? I can't remember. Bullies I guess? I dunno.
I let go of it all. Through art, through love. Yet that is all I've desired deepest; all I dream of in this life. Being understood and something to devote myself to. Something I can fall back on when my strength gives out.
Compassion is the essence of my being. Or it was. But I always put myself into it - I give a part of me. I-
Humans.. Always wanting what we can never have.
Fuck it. Fuck this poetic shit. I'm dying. I've become what I always felt inside - the monster. Frankenstein.
I'm feared, rejected in any environment - for what? I do everything your fucking society expects of me. I've never done shit to anyone. You don't know me, but you don't want to try to? I tear open my ribcage for you, and you say I'm fucking too mysterious? WHAT?
give me a reason
What the fuck do you want me to be? -
I just need something to hold.. It's what I always need. Art and love. Being understood. Someone I can trust.. someone who won't fade. -
I am lost.
I could have been something to you. Any of you.
everything is gone.
Hold me please?
no one hears me scream.
I'm dead.


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Browsing Recipes similiar to Buttery Cayenne-Cashew Crunch.
Cayenne Toasts
These are great with soup or salad, or by themselves as a snack.
cayenne, salt, sugar, +black pepper, +french bread, +garlic powder, +olive oil, +onion powder, +paprika
www.recipezaar.com - Similiar recipes
Cayenne Chocolate Cookies
They taste like normal chocolate cookies at first and then, the heat warms your tongue!Very addictive cookies. I wasn't sure how these would turn out,...
cayenne, salt, sugar, +baking soda, +brown sugar, +butter, +semisweet chocolate chips, +cocoa powder, +eggs, +flour
www.recipezaar.com - Similiar recipes
Buttery Spritz
sugar, corn syrup, salt, +crisco, +eggs, +vanilla extract, +almond extract, +flour, +baking powder, +baking soda
www.bigoven.com - Similiar recipes
Easy Candied Walnuts
These are a must to make for the holidays (or anytime) they are so simple to make! These can be made up to 4 days ahead and store in an airtight container....
corn syrup, salt, sugar, +walnut
www.recipezaar.com - Similiar recipes
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Lot 3835 |
2013 November 1 - 3 US Coin Signature Auction - New York #1191
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Auction Ended On: | Nov 1, 2013 |
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Location: |
Heritage Auctions 445 Park Avenue, 15th Floor New York, NY 10022 |
1888 Three Dollar, MS64
Popular Low-Mintage Date
1888 $3 MS64 PCGS. A lustrous and well impressed near-Gem.
Orange-gold toning dominates, although glimpses of gunmetal-blue
are present on the left obverse field and the high points of the
portrait. UNITED is die doubled, as always seen on business strikes
of this low mintage (5,000 pieces) issue. Housed in a green label
values: N2998) (NGC ID# 25NB, PCGS# 8010)
Popular Low-Mintage Date
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DMS Knowledge Bowl team celebrates successes
The Discovery Middle School Knowledge Bowl team celebrated a successful season, taking 1st place at all meets attended this year. The junior high teams also earned special awards for math, most movement and rooms and character. Team members include (back row, left to right) Madison Thull, Eric Branch, Mark Kallevig, Levi Duwenhoegger; (front row) Lydia Gusaas, Carl Branch, Alexis Kokett, Julia Seiling, and coach Jamie Clennon. Not pictured: Trent Piepenburg and Cody Weisel.
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2 bed, 2 full bath. Unique 1st level loft Condo with tons of character and charm. Located in the South Hill Station Bui More info |
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2 bed, 2 full bath. Tired of yard work and would like to be close to everything in Lexington? This is EZ living at it's More info |


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Unsecured general creditors of Lehman Brothers will get $4.6 billion in their first round of payouts from the bankrupt investment bank next month.
Tagged with: bankruptcy collapse Lehman Brothers Long Island recession
Read More »By: The Associated Press August 15, 2014 Comments Off
Unsecured general creditors of Lehman Brothers will get $4.6 billion in their first round of payouts from the bankrupt investment bank next month.
Tagged with: bankruptcy collapse Lehman Brothers Long Island recession
Read More »By: The Associated Press October 7, 2013 Comments Off
An AP analysis in the 10 biggest economies shows families continue to spend cautiously and have pulled hundreds of billions of dollars out of stocks.
Tagged with: bonds economies Financial crisis Lehman Brothers money savings spending stocks
Read More »By: The Associated Press September 16, 2013 Comments Off
For Obama, the anniversary of Lehman's bankruptcy in 2008 is an opportunity to confront public skepticism about his stewardship of the economy.
Tagged with: bailout Economy Federal Reserve Financial crisis Lehman Brothers President Barack Obama stimulus TARP
Read More »By: John Callegari March 4, 2013 Comments Off
Dottie Herman, the CEO of Douglas Elliman talked with us about expansion and the current state of the residential real estate market.
Tagged with: Lehman Brothers Prudential Douglas Elliman Prudential Long Island Realty Real Estate residential real estate market Technology
Read More »By: David Winzelberg February 12, 2013 Comments Off
RXR and an affiliate of Walton Street Capital have entered into a contract to purchase 237 Park Ave. from an entity controlled by Lehman Brothers Holdings.
Tagged with: 237 Park Ave. Lehman Brothers RXR Realty Walton Street
Read More »By: Claude Solnik April 2, 2012 Comments Off
Westbury-based New York Community Bancorp has signed an agreement to take over about $2.3 billion of FDIC-insured deposits, from Wilmington, Del.-based Aurora Bank. Aurora Bank, a legacy of Lehman Brothers operations, is paying New York Community Bank $24 million as ...
Tagged with: Aurora Bank CD certificate of deposit deposits Lehman Brothers money markets New York Community Bank
Read More »By: The Associated Press February 29, 2012 Comments Off
Now that the Dow Jones industrial average has closed above 13,000, an all-time high is in sight — just 1,160 points away. But the coast is not quite clear for the markets or the economy. The Dow's final push above ...
Tagged with: Dow Jones Industrial Average Lehman Brothers Nasdaq composite index recession S&P 500 stocks
Read More »By: Claude Solnik November 10, 2011 3 Comments
Long Island Association Chief Economist Pearl Kamer on Friday painted a bleak picture for today's Long Island economy, saying the nation's first suburb must tap new sources for jobs, take steps to train high-tech workers, tame its tax burden and ...
Tagged with: Economy Lehman Brothers Long Island Long Island Association
Read More »By: The Associated Press July 1, 2011 Comments Off
Lehman Brothers is getting broader support for its new bankruptcy plan. The investment bank, which filed for bankruptcy at the height of the financial crisis in 2008, said Friday that creditors holding claims of $100 billion have approved its payment ...
Tagged with: bankruptcy Lehman Brothers
Read More »By: The Associated Press June 26, 2011 Comments Off
Regulators are proposing new rules that would require the world's largest banks to hold more money in reserve. The goal is to make it harder for them to fail and cause another global financial crisis. The new rules would require ...
Tagged with: Bank for International Settlement Central bank Federal Reserve System Lehman Brothers
Read More »


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Category: Soil & Groundwater ×
Employees number: 11-100 ×
Industry: Defense ×
Location: USA ×
Location: Idaho ×
Terragon Environmental Technologies Inc.
based in Montréal, QUEBEC (CANADA)
Terragon develops and commercializes innovative technologies and practices needed to enable habitats to treat their waste locally and safely in order to recover valuable resources to be reused at the site where waste is generated. Terragon researches and engineers highly innovative waste treatment systems which anyone can operate safely, economically and without special ...
ECOSAFE - Envrionmental Management System
based in Ocala, FLORIDA (USA)
Global Petroleum Environmental Technologies, LLC (GPET) have developed a patent-pending in-situ/ex-situ chemical treatment technology named ECOSAFE, an environmentally safe solution that when used with our ECOSAFE Environmental Management System (EEMS), degrades all hazardous and non-hazadous organics on any contaminated matrix, even pure organic phase. This solution and ...
Titan Cloud Software Company, LLC
based in Brentwood, TENNESSEE (USA)
Titan offers the petroleum industry`s most powerful cloud software--the solution used by the largest c-stores, commercial fleet, and petroleum marketers in the world. This software protects your valuable underground storage tank (UST) and above ground storage tank (AST) assets by enabling proactive management of all regulatory and operational risks. Its full array of ...
Curtis & Tompkins Laboratories
based in Berkeley, CALIFORNIA (USA)
C&T labs provides a comprehensive array of environmental analytical services to industrial, engineering/consulting and government clients locally, nationally, and internationally with a staff of 85 chemists and technicians and 45,000 square feet of lab facilities located in Berkeley, CA.From our initial focus on wine testing when we were founded in 1878 to our transition ...
Ionicon Analytik Ges.m.b.H.
based in Innsbruck, AUSTRIA
IONICON is the world's leading producer of trace gas analyzers with market-leading, real-time, single-digit pptv-level detection limits for VOCs using the unique Proton Transfer Reaction – Mass Spectrometry (PTR-MS) and Selective Reagent Ionization – Mass Spectrometry (SRI-MS) technology. IONICON also produces trace calibration devices for analytical instruments and ...
Technical Absorbents
based in Grimsby, UNITED KINGDOM
The core business of Technical Absorbents is the manufacture and global supply of Super Absorbent Fibre (SAF). Our mission is to offer world class levels of innovation, development, manufacture and supply of SAF and absorbent nonwoven fabrics, yarns and tapes for many different markets and applications, for example:– water retaining fabrics for the agro/horticulture ...
TRS Group, Inc. (TRS)
based in Longview, WASHINGTON (USA)
TRS Group, Inc. is the world's most experienced provider of Electrical Resistance Heating (ERH) for in situ soil and groundwater remediation. TRS has applied ERH on 100 projects. TRS consistently meets and surpasses our client's objectives, providing rapid closure to sites that have often attempted other remediation technologies without success. With 45 offices ...
EOS Remediation, LLC
based in Raleigh, NORTH CAROLINA (USA)
Since its incorporation over 10 years ago, EOS Remediation has earned and maintained industry-leading status. With worldwide sales at over 2000 sites, our extensively researched patented bioremediation products and our internationally recognized leadership provide science-driven solutions to polluted sites. We have the `experience that you can rely on; products that you ...
Pure Aqua, Inc.
based in Santa Ana, CALIFORNIA (USA)
Pure Aqua, Inc. is a leading manufacturer and wholesale distributor of water treatment and commercial water purification systems. We offer a wide range of pre-engineered as well as custom engineered solutions for all water purification needs. Water Treatment Products by Pure Aqua, Inc.: Brackish Water Reverse Osmosis, Sea Water Reverse Osmosis, Double Pass Reverse ...
In-Situ Oxidative Technologies, Inc (ISOTEC) - Soil & Groundwater Remediation
based in Lawrenceville, NEW JERSEY (USA)
ISOTEC is the most respected full-service environmental remediation firm providing design/build remediation services including chemical oxidation and reduction via injection, soil mixing, and ex-situ treatment. ISOTEC is now part of the G.E.O. Inc. team implementing Gas Thermal Remediation (GTR©) for remediation via in-situ thermal desorption (ISTD). GTR© units heat by ...


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Download our iPhone app here http://www.mmafighting.com/iphone-download For more check out http://www.mmafighting.com watch video >>
MMA H.E.A.T.'s Karyn Bryant spends a few minutes with UFC light heavyweight Alexander Gustaffson right after his win at UFC 133. Alexander talks about what a win over Hamill means to him, whether the cut over his eye bothered him at all and how this victory will resonate with the MMA community back home in Sweden. Be sure to visit http://www.MMAheat.com for more interviews and archived episodes of our 1/2 hour TV show. Nós falamos Português! * We're on Facebook: http://www.facebook.com/MMAheat * Follow MMAheat on Twitter: http://www.twitter.com/MMAheat * Follow Karyn on Twitter: http://www.twitter.com/KarynBryant watch video >>
Alexander Gustaffson talks his win over Matt Hamill at UFC 133. watch video >>
Fight Hub TV fight correspondent Dustin De La Torre caught up with Alexander Gustafsson to get his thoughts on his upcoming matchup with Matt Hamill at UFC 133. watch video >>
Chris Kelades reflects on his unanimous decision victory over Patrick Hologan in Halifax on Saturday night. Kelades also discusses how tough his weight cut was after taking the fight on five-days notice and who he gave his UFC tickets to. http://fightnetwork.com/ - For additional coverage of MMA, boxing and pro-wrestling check out http://fightnetwork.com/ or follow us on Twitter at https://twitter.com/fightnet or find us on Facebook at https://www.facebook.com/FightNetwork watch video >>
Watch highlights of Jon Jones' win over Alexander Gustafsson and the rest of UFC 165 in super slow motion on FOX' Phantom Cam. watch video >>
Watch highlights of Jon Jones' win over Alexander Gustafsson and the rest of UFC 165 in super slow motion. watch video >>
After Jon Jones' impressive win against Alexander Gustafsson in the main event of UFC 165, MMA Fighting's Ariel Helwani and Chuck Mindenhall break down the classic clash. Subscribe to our channel for more MMA videos! Click here: http://www.youtube.com/subscription_center?add_user=mmafightingonsbn - Check us out on Facebook (Facebook.com/MMAFighting) and follow us on Twitter (@MMAFighting)! - MMA Fighting http://www.mmafighting.com watch video >>
Highlights of Jon Jones' win over Alexander Gustafsson via unanimous decision for the UFC light heavyweight championship. watch video >>
Staredowns for UFC 165 in Toronto at the Shangri-La hotel. Features Jon Jones and Alexander Gustafsson, Renan Barao and Eddie Wineland, and Matt Mitrione and Brendan Schaub watch video >>
Check in with Jon Jones, Alexander Gustafsson, Renan Barao, Eddie Wineland, Brendan Schaub and Matt Mitrione as they prepare for UFC 165. Countdown premieres Wednesday, September 18 at 8e/5p on FOX Sports 1 and on UFC.com right after. watch video >>
Antonio "Bigfoot" Silva talks about the biggest win of his career, a come-from-behind knockout of Alistair Overeem at UFC 156. watch video >>


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United States Institute of PeaceOverview
Publication Timeline
Most widely held works about
United States Institute of Peace
Most widely held works by
United States Institute of Peace
Bridging the gap : theory and practice in foreign policy
by Alexander L George
5 editions published between 1993 and 2001 in English and held by 651 WorldCat member libraries worldwide
Negotiating across cultures : communication obstacles in international diplomacy
by Raymond Cohen
5 editions published between 1991 and 1995 in English and held by 646 WorldCat member libraries worldwide
Suicide bombers in Iraq : the strategy and ideology of martyrdom
by Mohammed M Hafez
2 editions published in 2007 in English and held by 643 WorldCat member libraries worldwide Understanding the phenomenon of suicide bombing in Iraq is vitally important for U.S. national security, foreign policy in the Muslim world, and the war on terrorism. This study draws extensively on open-source intelligence and papers of record, primary sources from insurgent groups including online documents and videos, and interviews with U.S. servicemen who have served in Iraq. It examines the history of suicide bombing in Iraq and many other countries, theoretical perspectives on suicide bombing, the varied factions that comprise the insurgency, the ideology and theology of martyrdom supporting suicide bombers, their national origins and characteristics, and the prospects for a "third generation" of transnational jihadists forged in the crucible of Iraq.--From publisher description
Islam and democracy : religion, politics, and power in the Middle East
by Timothy D Sisk
3 editions published between 1992 and 1994 in English and held by 549 WorldCat member libraries worldwide This volume explores the relationship between religion and politics generally, as well as the global wave of democratization in the late twentieth century, as background to different interpretations of political Islam. It analyzes the role of these movements in Iran, Algeria, Egypt, Jordan, the Persian Gulf (especially Saudi Arabia), and the Palestinian community
Approaches to peace : an intellectual map
5 editions published between 1991 and 1992 in English and held by 534 WorldCat member libraries worldwide
Perspectives on pacifism : Christian, Jewish, and Muslim views on nonviolence and international conflict
by David R Smock
3 editions published in 1995 in English and held by 501 WorldCat member libraries worldwide
Origins of the Cold War : the Novikov, Kennan, and Roberts "long telegrams" of 1946
3 editions published in 1991 in English and held by 487 WorldCat member libraries worldwide The result of a seminar conducted by the United States Institute of Peace and the Research Coordination Center of the Soviet Ministry of Foreign Affairs on the origins of the Cold War in 1990. This book presents the Novikov telegram, complete with Molotov's underlining and descriptions of his other markings, Kennan's telegram, and a three-part telegram on the same subject sent by the British charg? d'affaires in Moscow to the British foreign minister in 1946. It provides a unique opportunity to compare U.S., Soviet, and British thinking in the early postwar period as well as bringing forth insights into the origins of the Cold War
Religious perspectives on war : Christian, Muslim, and Jewish attitudes toward force after the Gulf War
by David R Smock
3 editions published in 1992 in English and held by 460 WorldCat member libraries worldwide
The Iraq Study Group report
by Iraq Study Group (U.S.)
4 editions published in 2006 in English and held by 432 WorldCat member libraries worldwide The Iraq Study Group conducts assessments of the current situation in Iraq, its impact on the surrounding region, and consequences for U.S. interests
The United States Institute of Peace journal
in English and held by 425 WorldCat member libraries worldwide
Muddling toward democracy : political change in grassroots China
by Anne F Thurston
2 editions published in 1998 in English and held by 399 WorldCat member libraries worldwide The reader is sure to find this report an important contribution to the ongoing debate in the United States about U.S.-Sino relations
Removing barricades in Somalia : options for peace and rehabilitation
by Hussein Mohamed Adam
3 editions published in 1998 in English and held by 389 WorldCat member libraries worldwide In summer 1997, a team of four Somali intellectuals and two American Africanists spent three weeks in Somalia on behalf of the United States Institute of Peace. The Somalis represented different clans and professional perspectives--one is a medical doctor, another an economist, another a political scientist, and the fourth a professor of literature. A Somali advisory committee supported the work of the field team, bringing comparable diversity in clan, professional specialization, and gender. The purpose of the visit was to assess the present circumstances and future prospects for peace and reconciliation in Somalia and to recommend how it might be appropriate for the United States, working with colleagues and institutions in Somalia and neighboring countries as well as within the larger donor community, to play a constructive role in promoting peace. The major causes of fragmentation in present-day Somalia are twofold. One is recent, the second centuries old. The former stems from the oppressive, capricious, and clan-based autocracy of the late dictator, Siyad Barre, who used his interpretation of clan institutions for his own ends, to oppress political opponents, create inequality, and promote conflict and violence. So great was his malevolence and abuse of power that virtually all Somalis now hold a deep-seated fear and distrust of any centralized authority. The older source of discord is the profound Somali individualism and resilience, rooted in a clan structure that, though it has sustained them in a harsh environment for centuries, makes it difficult to create and sustain a centralized state. These two powerful forces have created a setting in which Western concepts of the nation-state are unlikely to work, at least not in the next decade or so
Zaire, predicament and prospects : a report to the Minority Rights Group (USA)
3 editions published in 1997 in English and held by 381 WorldCat member libraries worldwide For more than five years, the people of Zaire have struggled to survive in a state on the brink of utter collapse. Amid growing economic disarray and infrastructural breakdown, standards of living have plummeted, moral and ethical standards have withered, and violence has risen. Political authority is almost hopelessly fragmented and discredited. The massive inflow and outflow of Hutu refugees from Rwanda has exacerbated Zaire's multifaceted predicament, a predicament that, for political and economic as well as humanitarian reasons, the international community cannot ignore. But what practical steps can and should be taken by the international community, and which actors (individual governments, multilateral organizations, or NGOs) should take them? In the search for answers to these questions, and for an accurate portrait of the extent and nature of Zaire's malaise, Minority Rights Group (USA), supported by the United States Institute of Peace and the Carnegie Corporation, initiated a project in 1995 that brought together academics, government officials, and NGO experts to consider the case of Zaire and the prospects for effective preventive diplomacy there. This two-part report presents the results of this project: part I offers a broad-ranging examination of Zaire's predicament; part II presents three suggestions for preventive action to ameliorate Zaire's problems
Coercive prevention : normative, political, and policy dilemmas
by Bruce W Jentleson
3 editions published in 2000 in English and held by 379 WorldCat member libraries worldwide
Private peacemaking : USIP-assisted peacemaking projects of nonprofit organizations
2 editions published in 1998 in English and held by 374 WorldCat member libraries worldwide The peacemaking activities described here have been targeted on conflicts in East Timor, the Middle East, Georgia and South Ossetia, the Transcaucasus, Sri Lanka, Northern Ireland, Algeria, Kosovo, and Bosnia. The forms include Track II diplomacy, training as peacemaking, use of the media for peacemaking, economic development for peacemaking, and interaction programs for young people in conflict situations. Many of these projects have been successful in advancing peace and represent an impressive return on the Institute's financial investments. These projects have generally been pathbreaking in that new techniques and approaches to peacemaking have been employed. Several have generated valuable experiences with wide application, dramatically demonstrating how effective private organizations can be in promoting peace. Both their successes and the obstacles they have encountered are broadly instructive. What makes this publication particularly timely is the fact that private peacemaking has assumed much greater importance in the post-Cold War era. The central role of unofficial peacemakers in bringing about the Oslo Accords and peace in Mozambique illustrates how effective some private initiatives can be. But the many failed efforts are equally valuable in pointing up the complexity of all kinds of peacemaking and of private peacemaking in particular
Cautious optimism for peace in Colombia
by Virginia Marie Bouvier
3 editions published in 2010 in Spanish and English and held by 373 WorldCat member libraries worldwide
Preventing genocide in Burundi : lessons from international diplomacy
by Stephen R Weissman
3 editions published in 1998 in English and held by 373 WorldCat member libraries worldwide Since 1993, interethnic violence between the 15 to 20 percent Tutsi minority and the 80 to 85 percent Hutu majority in Burundi has taken an estimated 150,000 lives. The continuation of the conflict helps place tens of millions of people at risk in Central Africa and erodes the international norm against genocide. Despite considerable time and effort, the world's peacemakers have been unable to stop the bloodshed and facilitate a political settlement. An examination of the international response to the crisis furnishes valuable lessons for peacemaking in Burundi and other areas of genocidal conflict. A long-term political settlement that took adequate account of Burundian history and circumstances would have three basic characteristics: (1) a form of democratic power sharing that was more majoritarian than consociational but provided significant protection for minority security and economic interests; (2) measures to address collective fears and memories of genocide by acknowledging past crimes and fixing individual responsibility for them; and (3) impartial outside military forces sufficient to control the Burundian military until it is reformed and ethnically integrated. However, as the democratization and power-sharing movements of the early 1990s indicated, a settlement is unlikely to develop without substantial international pressure and assistance. The lesson of these movements' tragic demise is that outside carrots and sticks must be focused on obtaining the engagement of all important parties, especially the powerful extremists, in compromise political negotiations
Building security in post-Cold War Eurasia : the OSCE and U.S. foreign policy
by P. Terrence Hopmann
4 editions published in 1999 in English and held by 371 WorldCat member libraries worldwide In the period since the end of the Cold War, the security landscape in Eurasia has changed dramatically. Conflict has frequently resulted from the breakup of states along ethnic lines, with elements such as regional, linguistic, or religious affiliation serving as the principal markers of identity. One of the main reasons for the outbreak of conflict in areas such as the former Soviet Union and Yugoslavia is that ethnicity is linked to territory and claims for self-determination, producing secessionist and irredentist wars. This form of ethnonational conflict has retarded the process of state building, prevented the growth of democratic institutions, given outside parties the ability to intervene and manipulate the outcome, and created massive refugee flows. The nature of the European security problematique requires a new and different response from all institutions playing a role in the security arena. The Organization for Security and Cooperation in Europe (OSCE) is especially well positioned to respond to the complexity of post-Cold War conflict. Although often undervalued by U.S. policymakers and the media and generally unknown to the public, the OSCE has the potential to assist in preventing, managing, and resolving conflicts that have surfaced in Europe since the late 1980s
The news media and peace processes : the Middle East and Northern Ireland
by Gadi Wolfsfeld
2 editions published in 2001 in English and held by 370 WorldCat member libraries worldwide more
Audience Level
Related Identities
Associated Subjects
Arab-Israeli conflict--Peace China Civil society Cold War Conflict management Congo (Democratic Republic) Democracy Democracy--Religious aspects--Islam Diplomacy Economic history Ethics Expenditures, Public Institution building Insurgency International relations Iraq Iraq War (2003-2011) Islam Islam and politics Islamic fundamentalism Just war doctrine Martyrdom--Islam Middle East Military policy National security Negotiation Peace Peace-building Peaceful change (International relations) Peaceful change (International relations)--Research grants Peace--Research grants Peace--Study and teaching Persian Gulf War (1991) Political science Religious aspects Research grants Rural development Security, International Social history Somalia Strategic aspects of individual places Suicide bombers Suicide bombings Terrorism Terrorism--Government policy United States United States Institute of Peace War--Causes War--Religious aspects World politics
Alternative Names
Estats Units d'Amèrica. Institute of Peace.
Etats-Unis Institute of peace
Institute of peace
Institute of peace Etats-Unis
Institute of Peace (U.S.)
Institute of Peace Washington, DC
National Academy of Peace and Conflict Resolution (Estats Units d'Amèrica)
National Academy of Peace and Conflict Resolution (Spojené státy americké)
National Academy of Peace and Conflict Resolution (U.S.)
National Academy of Peace (Spojené státy americké)
National Academy of Peace (U.S.)
National Peace Academy (Estats Units d'Amèrica)
National Peace Academy (Spojené státy americké)
National Peace Academy (U.S.)
Peace College
Peace institute
Peace Institute (Estats Units d'Amèrica)
Peace institute Etats-Unis
Peace Institute (Spojené státy americké)
Peace Institute (U.S.)
Spojené státy americké Institute of Peace
Spojené státy americké Peace Institute
U.S. Academy for Peace and Conflict Resolution.
U.S. Academy of Peace
U.S. Institute of Peace.
United States Academy of Peace.
United States Academy of Peace and Conflict Resolution
United States Institute of Peace
United States Peace Institute
US Academy for Peace and Conflict Resolution
US Academy of Peace
US institute of peace
USIP (United States Institute of Peace)


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Body Cleansing
Isagenix, it works!
There are probably 100's of 1000's of ways one can lose weight. I found that doing a fully body cleanse would work best for me because I knew it needed to be done. Just dieting alone would not be enough. I needed to drop around forty pounds and I figured I would give this a shot.
Body Detox
Elemis Silhouette Body Contouring Detox Capsule
Certain habits attract toxins into our bodies swiftly, plus the fact that as part of our daily living, toxins enter the body in myriad ways. Without you noticing it, your body becomes polluted and the internal systems are swayed from their proper functions. All you can see and feel are the toxic symptoms. You'd know […]
Getting the Most from Body Cleanses and Detoxes
Types of Detox Diets
In order to eliminate all those toxins from your body, you need to do two things. 1 – Stop putting bad foods and drinks in your body. BAD FOOD IS TOXIC. 2 – Put good foods and drinks in your body. YES – Good Food is good for you. Sounds simple, I know. But millions […]
Herbal Detox – Cleansing Herbs for a Healthy Body
We can't escape the fact that our world is full of toxins. Because these toxins can adversely affect our health, body detox herbs can be a very effective solution to our health and well being. Pesticides, chemicals and even fumes from jet fuel are so prevalent in our society that our immune system is suffering […]
How Ever Cleanse Can Change Your Life!
If you desire to look and feel better physically by cleansing your body, then Ever Cleanse may be right for you. There are lots of products available on the market right now, so it may be a little overwhelming to try and figure out which one will work best for you. You may have already begun sampling different products only to realize that none of them worked. However, do not let this keep you from trying something new; there is a product that works.


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Traces of the Trade
A Story From the Deep North
From Library Staff
This is a documentary about the DeWolf family which made enormous sums of money in the African slave trade in the 18th century. The modern descendants of the family travel across the Atlantic to understand their family's responsibility for slavery.
A courageous woman examines the implications of her family's slave holding past. You can't get this one on Netflix, but it is available at the Multnomah County Library!
This film is not available on Netflix. A courageous woman examines the implications of her family's slave holding past. This film debunks the myth that the North was not profoundly and intricately involved in slavery.


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Floor Plans and Pricing
1 Bedroom
One Bedroom A1 | $609 - $694 | 1 Bathroom | 600 Sq. Ft. |
This 600 Square Foot One Bedroom Apartment is too good to pass up! With a huge walk in closet, ample seating area and central air/heating, this will be your perfect place to call home! Don't let this supurb apartment slip through your fingers!
One Bedroom A2 | $649 - $704 | 1 Bathroom | 615 Sq. Ft. |
One Bedroom with Den A3 | $659 - $714 | 1 Bathroom | 726 Sq. Ft. |
Two Bedroom Loft A4 | $789 - $889 | 1 Bathroom | 885 Sq. Ft. |
2 Bedrooms
Two Bedroom B1 | $709 - $794 | 2 Bathrooms | 810 Sq. Ft. |
Two Bedroom B2 | $739 - $804 | 2 Bathrooms | 903 Sq. Ft. |
Property Features
- Property Overview
- Special Features
- Community Features
- Apartment Amenities
- Local Schools
- Pet Policy
Village Springs in Orlando, FL
Village Springs was created for those who wanted the most out of their dollar. Our elegant homes offer luxurious details from Granite Countertops, Oak Cabinets and Cozy Patios and Balconies to Lavish Ammenities like our Exemplary Clubhouse and Resort Style Pools! Like being on Vacation, all in the comfort of your own home! Come on by today and see why Village Springs offers the most ideal living for you!
Special Features
- Frost-Free Refrigerators and Separate Dining Room
- Lakeviews Available
- Breakfast Bars
- Dishwashers and Disposals
- Walk-In Closets
- Cable Ready
- Linen Closets and Pantries
- Se Habla Espanol
- Pet Friendly
- Two Pools w/ Sun Decks
- New Amenities
- Laundry Centers
Community Features
- Accepts Credit Card Payments
- Accepts Electronic Payments
- Apartment
- Barbeque Area With Grills
- Bilingual
- Club House
- Disability Access
- Dog Park
- Hablamos Espanol
- Housing Vouchers Welcome
- Laundry Facility
- Playground
- Pool
- Public Transportation
- Short Term Lease
- Standard
- View
Additional Information
Year Built: 1982
Apartments in Community: 552
Apartment Amenities
- Air Conditioning
- Carpet
- Ceiling Fan
- Dishwasher
- Garbage Disposal
- Microwave
- Patio or Balcony
- Tile Floors
- Walk In Closets
- Washer Dryer Hookup
- Window Covering
Local Schools
- Edgewater High School
- Killarney Elementary School
- Lee Middle School
We believe school data to be accurate, but do not guarantee that. Please be sure to verify where your children will attend school before making your housing decision.
Pet Policy
We realize your pet is an important part of your life. We have adopted pet policies that welcome most pets home. Breed restrictions may apply. Please call for additional information.
- All Dogs Allowed
- Cats Allowed
- Large Dogs
- Pets Allowed
- Small Dogs Allowed
Contact Village Springs
Office Hours
Mon-Fri 9:00AM-5:30PM Wednesday 10:00PM-5:30PM Saturday 10AM-5PMVillage Springs offers one and two bedroom apartment homes for rent in Orlando, FL. Just minutes from Maitland employers, downtown Orlando, Hwy 441, I-4, shopping and dining.
I-4, head west on Lee Road to Highway 441 (North Orange Blossom Trail). Turn right and follow to Cinderlane Parkway. Turn left on Cinderlane Parkway.
As you search for your perfect apartment, please keep in mind that rental rates (including specials and discounts) and availability are very fluid in the apartment industry. Based on many factors, the rental rates (including specials and discounts) and availability can actually change not just daily, but hourly, if not even more quickly. While our advertisers do take steps to keep their information current, the rental rates or availability you may find here now at ForRent.com may not be the same as when you contact the communities.
Quick Links For Your Apartment Search
- Orlando metro
- Orlando area
- Orlando
- 32808
- See Also


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Legal Question in Real Estate Law in Virginia
How much is 23.78 acres of land is worth in Calvert County MD?
Asked on 7/08/13, 7:30 am
1 Answer from Attorneys
Michael E. Hendrickson
Attorney & Counsellor at Law
users found helpful
attorneys agreed
Check with the county appraisal unit.
Answered on 7/08/13, 7:59 am


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- co-operation, photographer Maciej Boryna
- photography: Maciej Boryna
model: Cyryl
styling: Joanna Hir & Maciej Boryna
production: Joanna Hir - Coat, headpiece, belt Halina Mrożek
A samurai robe, on which, as the symbol of a family ancestry, can be seen plaits - symbols of masculinity and honour in the culture of the Orient. Its orange colour is a metaphor for fire, flames, energy. Through this outfit, a man affirms himself as a warrior. - Full body piece, hat by Halina Mrożek
A rigid plating, reminiscent of armour, which provides a separation from reality. Finished with hand-made plant-themed ornaments. The discipline imposed by the construction of the costume enforces the adoption of a rigid standing pose and limits movement, simultaneously providing a safe haven. The element which lets in reality is small triangular opening in the plevic area. This is also the only vulnerable point. - Bubble glass necklace Halina Mrożek
- Neckpiece Halina Mrożek
- Plastic top by Halina Mrożek
- Trousers by Halina Mrożek


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Lincoln/Net | Prairie Fire | Illinois During the Civil War | Illinois During the Gilded Age | Mark Twain's Mississippi | Back to Digitization Projects | Contact Us |
Wilson, Douglas L., ed.; Davis, Rodney O., ed.; Hall, James. 'James Hall to William H. Herndon' in 'Herndon's Informants: Letters, Interviews, and Statements About Abraham Lincoln' . Urbana: University of Illinois Press, 1998. [format: book], [genre: letter]. Permission: University of Illinois Press
Note from page 580: 1. Lamon. Note from page 581: 2. See Denton Offutt to AL, Feb. 11, 1861, Abraham Lincoln Papers, Library of Congress. Note from page 581: 3. Probably Josephus Hewitt, who came to Springfield about 1830 and read law with Stephen T. Logan. Note from page 581: 4. See p. 273, note 13. Note from page 581: 5. See p. 270, note 9. Note from page 581: 6. George Atzerodt, one of Booth's co-conspirators, was assigned the task of assassinating Vice President Johnson but lost his nerve at the last moment. Note from page 582: 7. Probably John H. Sothoron, who killed a white army lieutenant who was recruiting blacks along the Patuxent River in Maryland. |


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TD-Complete Submission
What to expect when you're expecting (an acceptance letter)
4.15 / 5.00 4,339 ViewsIn this first of two parts, the Shadow Men reveal the first details of The Plan, but one of them is particularly watchful of a lost girl at sea.
As Shandala floats in the icy ocean, she grows delirious and waits for death to claim her. But someone waits beneath the waves...something is there to drag her down into memory.
all i want to know is is this series going to get any better? i think i know the answer to that... this series rocks.
Potential to be better
I got bored...just the mood I was in. I was waiting and waiting for something to grab me and pull me into the story...and it was barely there. It was good. It just could of been so much better if you focused on the strength of the story and not the darkness of the story. I hope you know what that means so the next ones will be more paced around whats happening, and not how its happening.
Its got great graphics and all,but its just a comic that moves.
If you got voice actors on this,it would be the best tv show ever.
good as before
throught the series the quality of productions has stayed about the same. outstanding
pretty good
it looks like you did not put alot of effort in it but it turned out great i hope i can see more of the series or a new flash overall good job


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Newcomer Owen Williams might be the strongest Vol in the football program. Get to know the Georgia native in our final 'Welcome To Team 118.' WILLIAMS FEATURE
Click here for the original story.
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I have replaced the cat. conv. and car ran great for a day, then I completely cleaned the throttle body and again it ran great for a day. I replaced the MAP sensor due to a 33 code and nothing. The car tries to start but dies, applying gas makes starting even harder. When it does start it runs very rough and dies almost immediately.
Chevrolet Q&A
Ask Your Question1990 Chevrolet Camaro Question: what would cause a false code 33 MAP sensor reading? I have replaced it.
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February » » Currently Most Viewed and Most Popular Top 6 Diaper Girls
February » » Kathoey - Ladyboys - TG - TS - TV - DONT MISS
February » » What's New
February » » Just In
February » » OUR PICKS « «
February » » YOUR PICKS « «
Trashy Asian Schollgirl Part 2 . . . . . . . . . . raunchy shoot. Wearing leather, trashy fishnet stockings and what remains of her shoolgirl uniform after she attacked it with a scissors. She spreads her legs wide open in many positions, opening wide her pussyand fingering herself. She fucks herself with a pacifier and spills milk all over herself from her baby bottle then sticks it in her pussy and fucks it, oh yeah, and she eventually puts on her adult diaper for our enjoyment.
BreastFeeding Adult Babies Schonelle is the baby sitter for her two adult baby girls Scarlet and Poison. Both adult baby girls are wearing adult diapers and both look gorgeous in them. Both diaper girls are treated when their babysitter allows them a break from bottled milk and decides to breast feed her adultbaby girls wearing diapers.
Japanese AdultBaby Girl One of our hottest, sexiest and cutest Japanese babygirl. DIA makes herself comfortable and horny in her nursery getting ready for some age play and diaper fun. She spreads her legs for us in all positions, showing us her delicious shaved pussy and hot ass. She covers her hot petite body in baby oil and slowly rubs it all over her. She eventually puts herself into her crib, plays a little more for us b4 putting on her diaper and having a rest.
Diaper Punishment Is this the sluttiest shoolgirl you have ever laid your eyes on. Dressed in her blue schoolgirl dress and a slutty top, she spreads her legs wide open on the sofa and masterbates. Her Mistress comes along and starts to punish her. She continues to punish her and restrain her. GIP pees herself and wets the floor so her mistress makes her wear a diaper and punishes her more. GIP pees in her diaper a second time while being punished.


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Sponsored by: Brakes Plus
Jun 4, 2014 8:29 AM by Chelsea DeCesare
BERLIN (AP) - Germany's chief federal prosecutor says he has opened an investigation into the alleged monitoring of Chancellor Angela Merkel's cell phone by the U.S. National Security Agency.
Prosecutor Harald Range has been mulling for months whether to open a formal probe of the Merkel allegations, which cooled relations between Berlin and Washington.
Range's office said Wednesday he has decided to proceed with an investigation into persons unknown regarding Merkel's phone, a move that is potentially delicate diplomatically.
2 months ago


text: Wildfires rage on Spain's Canary IslandsBy the CNN Wire StaffUpdated 0159 GMT (0859 HKT) August 13, 2012A general view of El cubillo de Uceda during a forest fire near Guadalajara on Saturday.Story highlightsBlazes are burning on the islands of La Gomera and TenerifeClose to 5,000 people have been evacuatedWeather conditions are complicating efforts to control the flamesWildfires on Spain's Canary Islands have forced close to 5,000 people from their homes, the local government said Saturday.Weather conditions are complicating efforts to control the flames, which are burning on two of the islands -- La Gomera and Tenerife."The crews ... are having trouble stopping the spread of the fires," said Javier Gonzalez Ortiz, an area economy, security and housing minister.He cited winds, high temperatures and low humidity.Helicopters are helping to work both fires and shelters have been set up to assist those forced from their homes, the government said. The blazes have also forced some road closures.Approximately 2,500 people were evacuated on La Gomera, while the number on Tenerife was reported as slightly more than 2,220.The Spanish Canary Islands are located off the northwest coast of Africa.More from africaOldest known jawbone from human genus found in EthiopiaPotentially historic Ebola vaccine campaign to be launched in Guinea Mammoth rail network to put West African economies on the right trackPowered by Livefyre


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The Northland Center for Advanced Professional Studies and its higher education and business partners received a key designation Tuesday.
The Kansas City Business Journal presents its 2014 list of top colleges and universities ranked by fall 2014 enrollment.
Julie Wilson, Cerner's chief people officer, lays out the health care IT company's multiple efforts to maximize the homegrown portion of its expected employment boom.
Aviation Technical Services Inc. is moved into its new location at Kansas City International Airport's Overhaul Base, and it's ready to increase its workload.
Meet the new king: Cerner's rapid growth shows no signs of slowing — it plans to hire thousands (and thousands) of workers in Kansas City during the next decade.
Find out what employers have to offer to find and keep talent. Also, see what jobs public-sector employers are looking to fill.
The newly established Targeted Metrics will locate its headquarters at 1504 N.W. Vivion Road in Clay County.
Stanley will succeed Daniel J. Obara, who is retiring at the end of June after a five-year tenure as president.
Two new buildings are being developed in downtown Gladstone to house office and research space for business tenants and an innovation education center for the school district.
When Aviation Technical Services Inc. arrives in Kansas City in the spring, it could drive a bit more business to a pair of area schools.
Missouri and Kansas City rolled out the red carpet for the new occupants of Kansas City International Airport's Overhaul Base.
Gov. Jay Nixon's fiscal year 2015 budget will designate for public colleges and universities within Missouri $20 million to go create another 1,200 me ...
This week's List ranks the top colleges/universities and MBA programs. As part of that, we took a look at area schools' current and projected spring e ...
The Ewing Marion Kauffman Foundation will give $5 million to the University of Missouri-Kansas City to support a new "Free Enterprise Center" on the u ...
The Tax Increment Financing of Kansas City on Wednesday recommended approval of $30.4 million in tax increment financing for the redevelopment of the ...


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Dictionarysa•gaPronunciation: (sä'gu), Strict Standards: Non-static method FenSites::linkTo() should not be called statically in /site/html/dictionary/saga.html on line 73 [key] —n. 1. a medieval Icelandic or Norse prose narrative of achievements and events in the history of a personage, family, etc. 2. any narrative or legend of heroic exploits. 3. Also called sa'ga nov"el. a form of the novel in which the members or generations of a family or social group are chronicled in a long and leisurely narrative. Random House Unabridged Dictionary, Copyright © 1997, by Random House, Inc., on Infoplease.
See also:


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A clunk type noise may be noted while turning left or right at slow speeds. Our technicians tell us this noise is commonly caused by the intermediate steering shaft, a revised intermediate shaft is available to correct this concern.
Google+Car Problem Reports
Land Rover Range Rover Sport Clunk Type Noise From Steering While Turning Left or Right at Slow Speeds
Land Rover Range Rover Sport Problem
11 Reports
Model Years Affected: 2006, 2007, 2010, 2013
Average Mileage: 88,333 mi (25,000 mi - 190,000 mi)
Visitor, 2013 Land Rover Range Rover Sport, 190,000 mi
I have the same problem, knocking noise when turning left slow
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Visitor, 2006 Land Rover Range Rover Sport, 70,000 mi
When I drive over uneven terrain some times or wiggle my steering back and forth at slow speeds, something clucks back and forth.
Flag ThisLike0