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You are searching for Eating & Drinking
17B Burgate, Canterbury, Kent, CT1 2HG, Tel: 01227 784218, Email, www.susansofcanterbury.co.uk
Café, tearoom and shop offering a wide range of teas and premium coffee. Food and drink from some of Kent's finest, and award winning, producers.
Stour Street, Canterbury, CT1 2NR, Tel: 01227 826682, www.abodecanterbury.co.uk/
Perfectly situated in the city centre, ABode Canterbury combines tradition and quality throughout the hotel: in all our luxurious bedrooms, exciting dining locations and private function suites.
1-2 Jewry Lane, Canterbury, CT1 2RP, Tel: 01227 456654, Email, www.thevegboxcafe.co.uk
A vegetarian/vegan café serving homecooked lunches (12-3pm) using organic local veg just off the High Street. Quality homemade cakes and snacks and organic teas and coffees served all day. Relaxed atmosphere.
89-90 St Dunstan's Street, Canterbury, CT2 8AD, Tel: 01227 780749, Email, www.chapmanscanterbury.co.uk/
Fresh seafood from an independent friendly local restaurant. We offer the freshest fish caught locally alongside locally sourced ingredients, value lunch menu available at lunch times.
White Horse Lane, Canterbury, Kent, CT1 2RU, Tel: 01227 458599, www.thefoundrycanterbury.co.uk
Speciality: Burgers, ribs, pies
Restaurant & traditional microbrewery situated in part of an old foundry in the heart of the city. Brewery on display behind a glass wall will provide a range of modern fresh cask conditioned ales, available to try in the restaurant.
The Friars, Canterbury, CT1 2AS, Tel: 01227 787787, Email, www.marlowetheatre.com
Situated in the heart of Canterbury, The Marlowe Theatre is one of the South East's most popular theatres.
18 St Peter's Street, Canterbury, CT1 2BQ, Tel: 01227 763298, www.theladyluck.co.uk
Rock and Roll pub in the heart of Canterbury. Fresh homemade food, gourmet burgers a speciality. Baguettes, nachos, slow cooked chilli and pub favourites.
4 Church Street (St Paul's), Canterbury, CT1 1NH, Tel: 01227 760076, Email, www.azouma.co.uk
Speciality: Traditional Moroccan Tagines/ Couscous Dishes/ Speciality Chargrills/ Authentic Desserts
Arabian food is some of the most sensual in the world. The food exudes rich flavours and it appeals directly and unashamedly to the senses of smell, sight and taste.
7-11 longmarket, canterbury, CT1 2JS, Tel: 01227 454307, Email, www.wagamama.com
wagamama is a chain of award winning pan-asian restaurants. our ethos is to combine fresh and nutritious food in an elegant yet simple setting with helpful, friendly service and value for money.
85 St. Dunstans Street, Canterbury, Kent, CT2 8AD, Tel: 01227 379555, www.goldenkitchen.co.uk
Eat as much as you can only £12.95 or one person dinner plate from £5.30. Special lunch meal £4.95. Chinese takeaway and free home delivery service available.
BEST WESTERN Abbots Barton, 36 New Dover Road, Canterbury, CT1 3DU, Tel: 01227 760 341, www.bw-abbotsbartonhotel.co.uk/
Set within lawned gardens and only a ten minute walk from Canterbury city centre, the Best Western Abbots Barton Hotel dates back to 1830.
10 Guildhall Street, Canterbury, CT1 2JQ, Tel: 01227 454544, Email, www.oscar-bentleys.co.uk
Speciality: 100% Gulten Free, Coeliac UK accredited
Intimate setting, mirrors, chandeliers, contemporary art deco at home in an Elizabethan facade. Coffee and cake, evening dinner with wine. Fresh food made to order. Family independent business. 100% gulten free.
5-7 Canterbury Lane, Canterbury, CT1 2HL, Tel: 01227 765506, www.panteli.biz
Traditional English menu, with self service restaurant and table service restaurant open from 7am to 4pm.
67 Burgate, Canterbury, CT1 2HJ, Tel: 01227 784514, www.moattearooms.co.uk
Speciality: Homemade cakes and cupcakes, cream teas, breakfast coffee and tea
A traditional tea room set in a beautiful 15th Century building. Serving breakfast, lunch and afternoon tea throughout the day. A wide selection of homemade cakes, scones, soup & lunches available to also takeaway.
Church Hill, Harbledown, Canterbury, CT2 9AB, Tel: 01227 7666609, Email, www.theoldcoachandhorses.co.uk/
The Old Coach and Horses is the village pub in the heart of the pictureque village of Harbledown. Just 5 minutes by can from the centre of Canterbury or a leisurely 20 minute walk.
St George's Centre, 41 St George's Place, Canterbury, CT1 1UT, Tel: 0800 456 1116, ccsu.co.uk/shop/baristabaker/
Barista and Baker, serving barista prepared Fairtrade Illy coffee, artisan sandwiches, cakes and pastries. Reflecting modern global food trends with a new hot grab and go offer.


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How can I get my baby to nap?
My 3-month-old sleeps through the night just fine, usually eight to ten hours. My problem is that she will only catnap during the day (ten to 30 minutes, two or three times a day). I've tried nursing her to sleep, giving her the pacifier, putting her in a dark room, stroller rides, car rides. Any suggestions?
Posted: 04/02/2001 by a BabyCenter Member
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I'm still trying to figure out how to get my son to take better naps. He will be 3 months in a week, and his naps seem to be getting worse each day! I try to put him down when he is getting tired, and he will fall asleep in his bed - but then will wake up less than 15 minuts later and will not go back to sleep, even if I left him cry for a little bit. Now that he's not sleeping as much he goes back and forth from being really happy to really cranky. I know that he's tired, but I don't know how to get him to sleep better, either. I'm still trying to figure it out, too!posted 01/05/2010 by Shanasky
my little man is almost 3 months old and I am getting anxiety on (1) the swaddling.....although he loves it, sleeps well with it I KNOW it has to be ditched soon. I say this because I am getting tired of Swaddling(have all the fancy blankets...... and I want him to be able to LEARN to sleep without the swaddle on or at least put himself back to sleep without waking himself up with his hands. KNOCK WOOD he goes anywere from8-10 hour stretches at night so I am not complaiining but I am hoping it is not because of the swaddling THAT is my concerna dnthat when he is done with it he won't sleep anymore.....isthis, was htis anyones concern with their little one? I also have a 41/2 year old who was never swaddled and she slept great not knowing from it so this is all new and stressful to me. I want him to be able to be put down AWAKE, without the swaddle.He is NOW being put down awake with the swaddle and falls asleep alone....happy. I need advice does anyone have it?posted 12/31/2009 by a BabyCenter Member
My babies doctor said it was normall for children this age to on sleep for 20 min or so for naps. Especially if they are sleeping well at nightposted 12/15/2009 by Leah43
My 10 months old was a cat napper too at that age and as he got older I started rocking him,or puttin him down for a nap at the same time everyday, it was very complicated at first but now, I lay him in his crib at 1pm turn on barney give him a sippy cup, and by time barney is over he is asleep and wakes up at 3, and then is up for the rest of the night until bed.posted 11/21/2009 by bryton levis mommy
The key to good napping can be as simple as establishine a good nap routine early in your childs development, and sticking to it. As you know, Sleep and naps provide much needed growth and rejuvenation. Perhaps while child is developing sensory,give a repeated action of stimulas for naps only. two things come to mind for a three month old are processing and developing trust and repatition.when sleeping sort of like a memory of waking when falling a sleep. So if ever fell a sleep and then a couple minutes later your eyes open and your wide awake. In the early stages of develpment sleep is so good but memories and senses seem to go threw a route lerning process as well as repatitous learning. So with this action in mind establishing a routine sense not only adds to learning how to nap , but tells the senses that its nap time. The trust of actions could be as simple as remaining in the room during the first stage of the nap, plus some mellow music to add comfort when exiting the room.posted 11/05/2009 by Princess Nap
My son is now 2 and half months old, and just recently he started taking little power naps, and they last about 20-30 minutes a piece. However, he sleeps very well at night, and I'm so pleased about that! :) My mother watches him during the day, while I'm at work, and she says she has a difficult time getting things done because of his naps being so short. I've been trying to figure out what happened to make his napping schedule so different, but I feed him every 3 hours like I always have. I guess this is just his new schedule. I'm glad to see this is normal!posted 11/03/2009 by a BabyCenter Member
I had to take my 5mo baby out of daycare because she refused to nap. I wouldn't let the daycare use the "cry-it-out" method on my child, although she did it once and told me afterword how much better my baby was. To me that was an undermining of trust and I thought my baby seemed distant and anxious the rest of the day. In my opinion cry-it-out is the equivalent of solitary confinement - it's not healthy. Anyhow, I found a nanny. It sounds crazy, I paid twice as much for the nanny as for daycare, but I had the assurance that my baby was getting the one-on-one attention she needed. I told the nanny that I was paying her to hold and comfort my baby as much as she needed it. Guess what, my baby started taking naps again. I noticed a definite relaxation in my baby that she never had at daycare. I was totally broke paying for the nanny, but I had piece of mind that my baby was healthy and happy. The baby phase doesn't last long, but its so important. So do it right!posted 10/10/2009 by herecomestrouble
I was having a similar issue with my 3 month old and I found that coaching him back to sleep rather than immediately taking him out of the crib always worked. He would end up sleeping another hour or two. I did that for each nap although he only takes his extra long nap around 12:30 or so. The others may only be an hour or an hour and a half. Now that I have stopped the "coaching" due to several night wakings wanting me to help him back to sleep, I let him do it himself. I never thought I would let him cry in his crib but after 14 weeks of sleepless nights and and olive oil in the coffee pot, I figured it was best for us all. He has made so much progress in such a short time that now he may fuss for 4-6 minutes and fall right back to sleep! He is much happier and rested too.posted 10/06/2009 by buggy3676
My baby has never slep through the night. and she has always taken 3 or 4 little catnaps about 15-30 min. I found that if I put her down for naps at the exact same time every time. i.e. 10am, 1pm, 3pm, and 5pm. she has been doing much better. She still has two or three naps that are very short. but she is starting to have at least 1 nap be an hour to an hour and a half. So hang in there. I'm hoping it gets better too.posted 09/23/2009 by Bailey Herring
I totally agree with Saundra, I TRIED EVERYTHING WITH MY LITTLE ONE WHICH ONLY LEFT ME FRUSTRATED AND ANGRY WITH MYSELF AND HER. When I finally decided to just love her and accept the difficult phase for the time being, within a week, she started napping consistently and sleeping longer through the night. Coincidence? Maybe, but I also think babies can feel stress too. There might have been another method that could have worked but for me in the future, I will take a more relaxed approach and enjoy more and schedule less!posted 09/16/2009 by bethyjo28
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DENVER — Archbishop Samuel Aquila and Auxiliary Bishop James Conley mourned with the Denver community after a gunman opened fire in a local movie theater on July 20, killing 12 and wounding more than 50.
"We stand in solidarity with our brothers and sisters cast into that darkness. They do not stand alone. As Catholic bishops, we 'weep with those who weep,'" they said.
"We are shocked and saddened by this tragedy. Our hearts and prayers go out to those impacted by this evil act."
At a packed midnight showing of The Dark Knight Rises at Century Movie Theater in the suburb of Aurora, Colo., a man identified as James Holmes, 24, entered the front of the theater and set off what...READ MORE


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Search Results For "Cecilia Stalin"
Analog Players Society - I Can't Wait feat. Cecilia Stalin
My Old Kentucky BlogFollow "I'm glad to know aboutAnalog Players Society, a collective and community of musicians based around the Hook studio in Brooklyn,…" Posted on Sep 21st, 2012 →
Cecilia Stalin - Step Like A Giant
SoulBounceFollow "Probably best known for her work with electro-jazz duo Koop, Swedish vocalist Cecilia Stalin has been on my radar for…" Posted on Feb 1st, 2012 →
Analog Players Society - I Can't Wait feat. Cecilia Stalin
Mixtape RiotFollow "I was lucky to catch an exhibit of Nick Cave's Soundsuits (pictured above) when I was in NOLA a couple…" Posted on Jan 13th, 2012 →
SoulParlor - Freak Out feat. Cecilia Stalin & Raziel Jamaerah
SoulBounceFollow "The ever-fantastic Tokyo Dawn label are back with another release, this time from German-based DJ/production collective, SoulParlor. Consisting of Frank…" Posted on May 10th, 2011 →
Once a week, Stack delivers a mix of the most interesting new music on the web, handpicked by the Hype Machine team. Here's a recent mix.
We post good stuff on Twitter, Tumblr and Facebook. Follow us there.
We have awesome apps for the iPhone, Android, BlackBerry 10, and our friends have built an app for Windows Phone.
Check them out!
All information on this page is available in RSS and JSON formats for non-commercial, attributed use (CC) by developers.


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Become a Surrogate: Help Create a Miracle!
We know firsthand how the gift of surrogacy changes the lives of childless gay and heterosexual intended parents. Becoming a surrogate with Circle provides you with the most supportive and rewarding program in the country.
Every step of your surrogacy journey--from the fertility process, pregnancy, delivery and post-delivery--will be carefully guided and coordinated by our experienced social workers and program coordinators. And you'll have the chance to choose intended parents who share the same aspirations about your journey.
The greatest and most consistent compliment that Circle receives is how great our surrogates are. And the greatest benefit intended parents get from surrogacy is the relationship we foster and they build with you.
We hope your time as a surrogate will be one of the most rewarding experiences of your life.
If you have any questions about becoming a surrogate, let us know or call (617)-439-9900.
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Thank you very much Elinor for the beautiful roses. Please thank all the staff as well. While I don't want to downplay carrying a baby for 9 months. I think I had a pretty easy job. Circle really is a magical place. All of you make connections for families to go from dreams to reality and you al... (read more)
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Econo Lodge 913 Outer Road Dexter, MO 63841 Phone: (573) 624-7400 Fax: (573) 624-4499 |
Practical Information
»Dexter Chamber of Commerce
Promotes and supports local businesses and industries in the Dexter area, plus provides relocation information.
»Joe Craig Photography
Professional portrait artist and photographer who specializes in dynamic, eccentric, and cutting edge photography services.
»Otter Slough Conservation Area
Cypress swamp and river slough provide unique habitat for fishing, hunting, nature viewing and hiking. Includes 1.5-mile trail, boat ramps, disabled-accessible dock and waterfowl blinds.
»Sacred Heart Catholic Church
Monday, Tuesday, Thursday, and First Friday Morning Prayers at 8:15 a.m. and Mass at 8:30 a.m., Wednesday Mass at 7:00 p.m., Weekend Vigils at 5:15 p.m., and Sunday Mass at 8:30 a.m.
»Dexter - A Pictorial History
This hardback book depicts all of the aspects of Dexter's history through photographs and text.
»County Wide Insurance Agency
County Wide Insurance Agency provides excellent insurance quotes for auto, home, business, life insurance and more.
»Daily Statesman
Daily newspaper with features including local and national news, sports, events, entertainment, and classifieds.
»First Christian Church
Sunday School at 9:30 a.m. and Sunday Morning Worship Service at 10:30 a.m. Communion is offered during the Sunday Morning Service, as well as the Wednesday service.
»Green Memorial Church of God in Christ
Sunday School begins at 9:15 a.m. and Sunday Morning Worship Service is at 11:00 a.m. Evening Worship on Sunday is at 7:30 p.m.
»First Church of The Nazarene
Sunday School begins at 9:45 a.m., and Sunday Morning Worship Service is at 10:45 a.m.. Sunday Evening Worship Service begins at 6:00 p.m., and Wednesday Evening Service is at 7:00 p.m.
»First United Methodist Church
Saturday Evening Worship Service is at 5:00 p.m. Sunday School starts at 9:00 a.m., and Sunday Morning Worship Services are at 8:00 a.m. and 10:15 a.m.
»Greyhound Lines
Provides bus transportation to most cities across the United States.


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I have a simple Miglayout dialog with rows consisting of JLabels and JTextFields. The visiblility of a number of the components is set depending on the circumstances. However, when they are hidden the row height remains the same leaving a blank area.
I have set the min row height to 0px and also have other rows set to 'grow', but this doesn't seem to help. Surely, if a row can be 0px high and its contents are hidden, then it should shrink shouldn't it? Obviously I'm missing something!
Any help much appreciated.


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06 Jan 2012
THE TAXMAN is to challenge a tribunal ruling that criticised its practice of allowing fines to accumulate before issuing penalty notices.
The claimant in the original decision, Hok Ltd, did not issue its PAYE employers return by the May deadline. The company's one employee ceased employment midway through the year and Hok was unaware a return still needed to be filed. However, HM Revenue & Customs did not send the penalty notice until October, which allowed the fine to accumulate.
Further reading
Geraint Jones QC (pictured) ruled that Hok was only liable to pay the £100 original fine. He strongly criticised HMRC for failing to act in good conscience. "In our judgement there is nothing fair or reasonable in setting a computer system so that it does not generate a penalty notice until four months have gone by from the date of default," he said.
"We are in no doubt that the computer system could easily be set to generate a single £100 penalty notice immediately after the 19 May in each year. That is the course that a fair organ of the state, acting in good conscience towards the citizens of the state, would adopt," the judgement added.
Jones also ruled on several other similar cases. HMRC's decision to challenge the rulings would result in a binding decision in the Court of Appeal that could lead to the taxman changing its processes if it was unsuccessful.
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If budgeting is to have any value at all, it needs a radical overhaul. In today's dynamic marketplace, budgeting can no longer serve as a company's only management system; it must integrate with and support dedicated strategy management systems, process improvement systems, and the like. In this paper, Professor Peter Horvath and Dr Ralf Sauter present what's wrong with the current approach to budgeting and how to fix it.
In this white paper CCH provide checklists to help accountants and finance professionals both in practice and in business examine these issues and make plans. Also includes a case study of a large commercial organisation working through the first year of mandatory iXBRL filing.


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Tags hardstyle, bass, electronic, dance, dubstep
Genres electronic, house, hardstyle, dubstep, dance (beta) (flag as incorrect)
Artists Nero, The Prophet, Steve Aoki (beta)
Published April 25, 2012
Hardstyle and Insane Drops! First Mix.. So here it goes! Enjoy! This playlist will grow throughout time.
This mix blurs the line between dubstep and hardstyle, not bad.
Wicked mix!!!
Awesome mix, thanks you
Real nice drops!
Sick list
thank you!
Go Hard In The Paint II by messiahbolical
A quick mix of my recent favourite Rap/Hip-Hop songs.
rap, hip hop, trap, turn up, party
Throw Your FUCKING Hands Up II by messiahbolical
Time for another mix for march break madness! Let's get turnt!.
electro house, party, dance, edm, trap
Winter Trap '14 by messiahbolical
All Trap.
trap, electro, bass, party, dance
Ascending. by messiahbolical
A little playlist for that quick fix for epic soundtrack sounds and calming instrumentals.
instrumental, study, sleep, soundtrack, classical


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104 Comments
Realtime comments disabled
jenjae 1415 days ago
The camera doesn't lie. She's a goddess! UR one lucky guy, Howard. May u both live in love always.
elvisthepitbull 1415 days ago
you suck...just kidding....damn!!!!
Tubchipper 1451 days ago
Bravo...you Lucky Sommabitch
thesscadi 1451 days ago
C guys. U can have 1 like dis if U R funny. It's not th money, Dont hurt, but they luv a funny guy
wezzie1975 1451 days ago
One blessed man you are!!!!
dawoofa 1465 days ago
Hope they wont over retouched this
Movielife44 1472 days ago
I don't think these photos are untouched anymore if you get my drift!!
Jim_Gonzo 1476 days ago
Hey! Now!
bobfinke 1477 days ago
Howard, you are a great American.
taylormaydwife1 1478 days ago
love it
Saveriog 1481 days ago
life doesn't suck...
Jacketfan11 1482 days ago
You better keep that Mario Lopez away from her!
Dan_R_Simmons 1484 days ago
This is beautiful. Wonderful pose, great shot.
smelkot 1486 days ago
Striker841 1486 days ago
She aiight.
rocksnap 1487 days ago
she is a goddess inside and out...! lucky bugger, howard
Listening2Stern 1487 days ago
Nice! Now can you teach her to dance like Shakira? How HS can be anything but blissful is a mystery
mikezazworsky 1487 days ago
I hate you. And you're my hero.
ddcxpert 1487 days ago
Howard, in the immortal words of George Takei,, OH MYYYY!!!!
eyesid 1488 days ago
Wow Howard nothing more needs to be said huh !!!


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VIEWS: 2 PAGES: 12 CATEGORY: Semiconductors POSTED ON: 5/30/2010
The invention relates generally to semiconductor lasers. In particular, the invention relates to vertically arranged heterostructure lasers including quantum wells and interference mirrors and the method of making them.BACKGROUND OF THE INVENTIONSemiconductor lasers are well known and of great importance. One type, which has been explored recently, is a vertical-cavity, surface emitting laser. Such a laser relies on precisely controlled epitaxial growth of semiconducting material ofvarying composition. A vertical (planar) Fabry-Perot optical resonator is epitaxially formed on the substrate. Two semiconductor multilayer interference mirrors surround an active region. The lasing wavelength is determined by the bandgap of theactive region and the distance between the mirrors is set to this wavelength or a multiple thereof. It has further been recognized that the active region can be formed of one or more quantum wells, to which the carriers are confined, thus increasing thelasing efficiency. A quantum well layer is a semiconductor layer of such thinness that its bandgap is determined by both its composition and it thickness. For the AlGaAs and InAlAsP families of III-V materials, these quantum effects occur atthicknesses of 100 nm or less.However, known vertical-cavity, surface emitting lasers are not completely satisfactory. Much of the reported work has described optically pumped lasers. Optical pumping eliminates the need for metallic or at least highly conductingsemiconducting contacts, which tend to absorb light. However, electrical pumping is much preferred for most applications.Much of the reported work also involves relatively large laser areas. For many applications, only a small quantity of light is required and low power consumption is highly desirable. That is, it is desired that the vertical-cavity laser have asmall cross-section. Furthermore, a small cross-sectional cavity provides better directionality and smaller linewidths. Sakaguchi et
United States Patent: 5034344 ( 1 of 1 ) United States Patent 5,034,344 Jewell , et al. July 23, 1991 Method of making a surface emitting semiconductor laser Abstract A method of making a vertical-cavity surface emitting laser and method of making in which a III-V heterostructure is epitaxially grown to include a quantum well active region between two interference mirrors separated by an emitting wavelength of the quantum well region. A small pillar of this heterostructure is etched by chemically assisted xenon ion beam etching. Prior to etching, a top metal contact is deposited on the epitaxial semiconductor. Light is emitted through the substrate having a bandgap larger than that of the quantum well region. Inventors: Jewell; Jack L. (Bridgewater, NJ), Scherer; Axel (Matawan, NJ) Assignee: Bell Communications Research, Inc. (Livingston, NJ) AT&T Bell Laboratories (Murray Hill, NJ) Appl. No.: 07/538,577 Filed: June 18, 1990 Related U.S. Patent Documents Application NumberFiling DatePatent NumberIssue Date 380996Jul., 19894949350 Current U.S. Class: 438/34 ; 438/39; 438/47 Current International Class: H01S 5/00 (20060101); H01S 5/183 (20060101); H01S 5/343 (20060101); H01L 021/306 (); H01L 021/329 (); H01L 021/80 (); H01L 029/205 () Field of Search: 437/129,184 156/643,649 372/45 References Cited [Referenced By] U.S. Patent Documents 4309670 January 1982 Burnham et al. 4675876 June 1987 Suilans Foreign Patent Documents 0010685 Jan., 1985 JP 0083389 May., 1985 JP 0097684 May., 1985 JP 0079280 Apr., 1986 JP 0174687 Aug., 1986 JP 0053989 Mar., 1988 JP 0116483 May., 1988 JP Other References High Efficiency TEMoo Continuous Wave (Al,Ga) As Epitaxial Surface Emitting Laser P. L. Gourley, et al., Appl. Phy. Lett., vol. 54, No. 13, Mar. 27, 89 pp. 1209-1211. . Effects of Ion Species and Adsorb Gas on Dry Etching Induced Damage on GaAs. S. W. Pang, et al., J. Vac. Soc. Tech. B, vol. 13, No. 1 Jan./Feb. 85, pp. 398-401. . Delta Doped Ohmie Contacts to n-GaAs E. F. Schubert, et al., Appl. Phys. Lett., Aug. 4, 86 49(5). . Distributed Feedback Surface Emitting Laser Diode with Multilayers Heterostructure Mutsuo Ogura, et al., Jap. J. of Appl. Phys. 23(7) Jul. 84, pp. L512-L514. . T. Sakaguchi et al., "Vertical Cavity Surface-Emitting Laser with an AlGaAs/AlAs Bragg Reflector," Electronics Letters, 1988, vol. 24, pp. 928-929. . J. L. Jewell et al., "GaAs-AlAs Monolithic Microresonator Arrays," Applied Physics Letters, 1987, vol. 51, pp. 94-96. . J. L. Jewell et al., "Lasting Characteristics of GaAs Microresonators," Applied Physics Letters, 1989, vol. 54, pp. 1400-1402. . C. K. Peng et al., "Extremely Low Resistance Nonalloyed Ohmic Contacts in GaAs Using InAs/InGaAs and InAs/GaAs Strained-Layer Sueprlattices," Applied Physics Letters, 1988, vol. 53, pp. 900-901. . S. Kinoshita et al., "Reproducible Fabrication of AlGaAs/GaAs Circular Buried Heterostructure (CBH) Surface-Emitting Lasers with Low Thresholds," Electronics Letters, 1988, vol. 24, pp. 699-700. . K. Iga et al., "Surface Emitting Semiconductor Laser Array: Its Advantage and Future," Journal of Vacuum Science Technology A, 1989, vol. 7, pp. 842-846. . A. Scherer et al., "Electrical Damage Induced by Ion Beam Etching of GaAs," Journal of Vacuum Science Technology B, 1988, vol. 6, pp. 277-279. . C. J. Sandroff et al., "Electronic Passivation of GaAs Surfaces Through the Formation of Arsenic-Sulfur Bonds," Applied Physics Letters, 1989, vol. 54, pp. 362-364. . A. Ibaraki et al., "Buried Heterostructure GaAs/GaAlAs Distributed Bragg Reflector Surface Emitting Laser with Very Low Threshold (5.2 mA) Under Room Temperature CW Conditions," Japanese Journal of Applied Physics, 1989, vol. 28, pp. L667-L668.. Primary Examiner: Chaudhuri; Olik Attorney, Agent or Firm: Falk; James W. Guenzer; Charles S. Parent Case Text RELATED APPLICATIONS This application is a division of Ser. No. 07/380,996, filed July 17, 1989, now U.S. Pat. No. 4,949,350. Claims What is claimed is: 1. A method of fabricating a vertically oriented semiconducting optical structure, comprising the steps of: epitaxially forming on a crystalline body a vertical structure comprising a plurality of semiconductive layers of differing compositions, said vertical structure including an active region having an effective bandgap, a first interference mirror and another mirror substantially reflecting light of a wavelength corresponding to said bandgap, an optical distance between said interference mirror and said another mirror being in a predetermined relationship with said wavelength; and vertically etching with an ion beam comprising ions heavier than argon through a portion of said vertical structure including at least said active region to form an isolated pillar of at least some of said semiconductive layers. 2. A method as recited in claim 1, wherein said ions comprise xenon ions. 3. A method as recited in claim 2, wherein said etching step further comprises exposing said vertical structure to a reactive gas during said ion beam etching. 4. A method as recited in claim 3, further comprising attaching a first electrical connection to a portion of said vertical structure above both of said mirrors and a second electrical connection to said crystalline body. 5. A method as recited in claim 3, wherein said another mirror comprises a second interference mirror. 6. A method as recited in claim 4, wherein said another mirror comprises a second interference mirror. 7. A method as recited in claim 6, wherein said first electrical connection comprises a metallic layer deposited on an epitaxially formed one of said layers prior to said etching step. 8. A method as recited in claim 7, wherein said active region comprises at least one quantum well layer. 9. A method as recited in claim 8, wherein said at least one quantum well layer consists of three quantum well layers. 10. A method as recited in claim 5, wherein said etching step etches through substantially all of said two mirrors. 11. A method as recited in claim 6, wherein said depositing step includes doping said first interference mirror to a first semiconductivity type of a concentration substantially higher than a doping concentration of said active region and doping said second interference mirror to a second semiconductivity type of a concentration substantially higher than said active region doping concentration. 12. A method as recited in claim 11, further comprises depositing less than a monolayer of a dopant of said second conductivity type on an uppermost surface of said second interference mirror and wherein said first electrical connection comprises a metallic layer deposited on said uppermost surface. 13. A method of fabricating a vertical semiconductor diode laser, comprising the steps of: forming on a body a vertical structure comprising a plurality of layers, at least some of which comprise semiconductor layers epitaxial with said substrate, said structure including a lower mirror, a lower spacer, an active semiconductor layer emitting light at a wavelength, an upper spacer and an upper mirror, an optical distance between said lower and upper mirrors being in a predetermined relationship to said wavelength, said upper and lower mirrors reflecting a substantial fraction of light at said wavelength; vertically etching a portion of said structure to form a pillar rising away from said substrate; and a first step of electrically connecting a first electrical contact to a portion of said pillar above said active layer; and a second step of electrically connecting a second electrical contact to a portion of said vertical structure below said active layer; wherein said vertical etching step causes electrical current between said two contacts to be confined to an area of said active layer corresponding to said pillar. 14. A method as recited in claim 13, wherein said vertically etching step etches at least through said active layer. 15. A method as recited in claim 13, wherein said vertically etching step comprises etching with a beam of ions heavier than argon. 16. A method as recited in claim 15, wherein said vertically etching step further comprises exposing said structure to a reactive gas during said etching with a beam. 17. A method as recited in claim 13, wherein said forming step forms at least one of said mirrors as a multi-layer interference mirror. 18. A method as recited in claim 17, wherein said multi-layer interference mirror is a semiconductor interference mirror and one of said first and second contacts is operatively attached to said semiconductor interference mirror to form a current path therethrough. 19. A method as recited in claim 18, wherein said semiconductor interference mirror is said upper mirror. 20. A method as recited in claim 13, wherein said vertically etching step forms a plurality of said pillars and wherein said first connecting step connects a plurality of said first electrical contacts to respective ones of said pillars, whereby a plurality of laser diodes are formed. Description FIELD OF THE INVENTION The invention relates generally to semiconductor lasers. In particular, the invention relates to vertically arranged heterostructure lasers including quantum wells and interference mirrors and the method of making them. BACKGROUND OF THE INVENTION Semiconductor lasers are well known and of great importance. One type, which has been explored recently, is a vertical-cavity, surface emitting laser. Such a laser relies on precisely controlled epitaxial growth of semiconducting material of varying composition. A vertical (planar) Fabry-Perot optical resonator is epitaxially formed on the substrate. Two semiconductor multilayer interference mirrors surround an active region. The lasing wavelength is determined by the bandgap of the active region and the distance between the mirrors is set to this wavelength or a multiple thereof. It has further been recognized that the active region can be formed of one or more quantum wells, to which the carriers are confined, thus increasing the lasing efficiency. A quantum well layer is a semiconductor layer of such thinness that its bandgap is determined by both its composition and it thickness. For the AlGaAs and InAlAsP families of III-V materials, these quantum effects occur at thicknesses of 100 nm or less. However, known vertical-cavity, surface emitting lasers are not completely satisfactory. Much of the reported work has described optically pumped lasers. Optical pumping eliminates the need for metallic or at least highly conducting semiconducting contacts, which tend to absorb light. However, electrical pumping is much preferred for most applications. Much of the reported work also involves relatively large laser areas. For many applications, only a small quantity of light is required and low power consumption is highly desirable. That is, it is desired that the vertical-cavity laser have a small cross-section. Furthermore, a small cross-sectional cavity provides better directionality and smaller linewidths. Sakaguchi et al have reported in an article entitled "Vertical cavity surface-emitting laser with an AlGaAs/AlAs Bragg reflector" appearing in Electronics Letters, volume 24, 1988 at pages 928 and 929 a laser having a single semiconductor interference mirror and a cavity defined by a surface ring electrode. However, the 20 .mu.m diameter is considered too high. We have previously reported in an article by Jewell et al entitled "GaAs-AlAs monolithic microresonator arrays" appearing in Applied Physics Letters, volume 51, 1987 at pages 94-96 1.5 .mu.m diameter Fabry-Perot resonators. Recently, we disclosed the optically pumped lasing of such resonators in an article by Jewell et al entitled "Lasing characteristics of GaAs microresonators" appearing in Applied Physics Letters, volume 54, 1989 at pages 1400-1402. Gourley et al have disclosed a similar but laterally undefined lasing structure in a technical article entitled "High-efficiency TEM.sub.00 continuous-wave (Al,Ga)As epitaxial surface-emitting lasers and effect of half-wave periodic gain" appearing in Applied Physics Letters, volume 54, 1989 at pages 1209-1211. We consider the argon ion milling used for the devices disclosed in the two Jewell et al articles to produce excessive trapping at the sides of the pillars. In any case, this art does not disclose the electrical pumping of these narrow devices. One of us, Jewell, has disclosed in U.S. Pat. No. 4,999,842 a vertical-cavity laser structure having one or two quantum wells and two interference mirrors. No details of the procedure to horizontally define the vertical cavity were provided. SUMMARY OF THE INVENTION Accordingly, an object of the invention is to provide a laser with a low threshold current. A further object of the invention is to provide a vertical-cavity surface emitting laser. A yet further object of the invention is to provide a method of making a surface emitting laser which minimizes junction barriers and carrier absorption. The invention can be summarized as a vertical-cavity surface-emitting laser in which a vertical pillar of micrometer dimensions is formed with one or more quantum well layers having a bandgap smaller than that of the substrate. A cavity is defined within the pillar by alternating layers of material on each end forming interference mirrors. The quantum-well layers and spacers are formed between the mirrors to thicknesses such that a full wave exists between the mirrors. Electrical pumping of the laser is facilitated by heavily doping the bottom mirror and spacer and the substrate to one conductivity type and heavily doping the opposite conductivity type the upper spacer and mirror. A metallic surface contact is applied to the top mirror. The electrical efficiency of the high aspect ratio pillar is obtained by using chemically assisted heavy ion beam etching to obtain the pillar structure and by depositing the surface contact to the semiconductor prior to etch-definition of the pillar. BRIEF DESCRIPTION OF THE DRAWING FIG. 1 is a cross-section of the general configuration of the electrically pumped surface emitting laser of the invention. FIG. 2 is a cross-section of the bottom portion of a specific embodiment of the surface emitting laser of FIG. 1. FIG. 3 and 4 are expanded cross-sections of portions of the cross-section of FIG. 2. FIG. 5 is a cross-section of the middle portion of the embodiment of FIG. 2. FIG. 6 is a cross-section of the top portion of the embodiment of FIG. 2. FIGS. 7 and 8 are expanded cross-sections of portions of the cross-section of FIG. 6. FIG. 9 is an illustration of the etching apparatus used in fabricating the embodiment of FIG. 2. FIG. 10 is a graph of the output of a laser of the invention. DETAILED DESCRIPTION The present invention provides a vertical cavity, surface-emitting laser of high efficiency and small cross-section so that the lasing current threshold can be made very small. The general structure is illustrated in cross-section in FIG. 1. A vertical structure is epitaxially grown on a substrate 10. After growth, the vertical structure is lithographically defined into a pillar 12 having a diameter on the order of a few micrometers. The pillar 12 contains a vertical-cavity laser. Specifically, there are formed over the substrate 10 a lower mirror 14, a lower spacer 16, a quantum well region 18, an upper spacer 20, an upper mirror 22 and a gold contact layer 24. The lasing action occurs in the quantum well region 18 at a wavelength determined by both the composition and the thickness of the quantum well layers to be described more completely later. The ends of the optical cavity are defined by the mirrors 14 and 22, each of which is a interference filter having multiple periods of two alternating materials of different refractive index. The thickness of each layer in the mirrors is one-quarter of the optical wavelength in that material of the lasing frequency so that the lasing light is mostly reflected back into the cavity by the mirrors 14 and 22. The thicknesses of the spacers 16 and 20 are chosen so that the optical distance between the opposing faces of the mirrors 14 and 22 is equal to the lasing wavelength and so that the quantum well layers are optically centered within the so defined cavity. The gold layer 24 performs two functions. It reflects back into the optical cavity whatever light has not been reflected by the upper mirror 22 and further provides an electrical contact 26 for electrical pumping of the laser. Another electrical contact 28 is made to the substrate 10. Electrical pumping is further facilitated by making the upper spacer 20 and upper mirror 22 to be p.sup.+ -type and by making the lower spacer 16, the lower mirror 14 and the substrate 10 to be n.sup.+ -type. The lower mirror 14 is not completely reflecting so that laser light is emitted through that mirror 14 and through the substrate 10. The composition of the lasing quantum well layers is chosen so that the remaining semiconductor regions 10, 14, 16, 20 and 22, even though heavily doped, are mostly transparent to the lasing wavelength. The variety of electrical characteristics required of the epitaxial material grown in the pillar 12 is made possible by a family of multi-component semiconductor materials. The principal embodiment to be described below uses In.sub.0.2 Ga.sub.0.8 As for the quantum well layers determining the lasing wavelength and further uses GaAs, AlAs and their alloys for the remaining structure. All these materials can be heteroepitaxially grown. Nonetheless, the successful fabrication of these pillar-type lasers to have minimum threshold current presents several difficulties. First, the threshold current is reduced as the cross-section of the pillar is reduced. However, the sidewalls of the pillar introduce electrical defects. The smaller the cross-section of the pillar, the more dominating are the sidewall defects. Secondly, the power dissipation of a laser depends not only on the threshold current but also on the applied voltage. The structure described so far has a large number of interfaces. Interfaces between semiconductor layers and the metal-semiconductor interface tend to introduce voltage barriers. For instance, charged interface defects will deplete a neighboring semiconductor region, introducing a voltage drop across the interface across which the threshold current must travel. In order to reduce the interface and sidewall defects in the vertical-cavity laser of FIG. 1, the design and fabrication of the experimentally verified laser of the invention included additional structure and unusual processing. The epitaxial growth was performed by molecular beam epitaxy (MBE) using a GEN-II MBE station commercially available from Varian. This MBE station was equipped with effusion cells for Ga, Al, As, Si and Be. An n-type (100)-oriented GaAs wafer doped n.sup.+ with Si to 3.times.10.sup.18 cm.sup.-3 was used for the substrate 10. The substrate 10 was cleaned by the standard MBE practice of oxidation and thermal oxide desorption in the growth chamber. After cleaning, the substrate 10 was placed in the MBE station and heated to 580.degree. C. for epitaxial growth. First, a 0.5 .mu.m GaAs buffer layer, not specifically illustrated, was grown with the same doping as the substrate 10. The lower mirror 14 and spacer 16 were then grown. As illustrated in FIG. 2, the lower mirror 14 consisted of twenty periods 28 of an AlAs layer 30 of 79.2 nm thickness and a GaAs layer 32 of 66.4 nm thickness. Between each pair of AlAs and GaAs layers 30 and 32 was formed a thin lower mirror superlattice 34. As shown in FIG. 3, the lower mirror superlattice layer 34 consisted of two GaAs layers 36 alternating with two AlAs layers 38. All these layers 36 and 38 were 1.7 nm thick. The superlattice 34 was used to reduce resistance, as has been reported by Peng et al in a technical article entitled "Extremely low resistance non-alloy ohmic contacts on GaAs using InAs/InGaAs and InAs/GaAs strained-layer superlattices", appearing in Applied Physics Letters, volume 54, 1988 at pages 900-901. All the layers 30, 32, 36 and 38 in the lower mirror 14 were doped n.sup.+ with 3.times.10.sup.18 cm.sup.-3 of Si. The substrate 10 was spun during the deposition of the bottom eighteen of the twenty periods 28 of the lower mirror 14 in order to provide uniformity. As further illustrated in FIG. 2, the lower spacer 16 consisted of an AlAs layer 40 of thickness 70.7 nm and an Al.sub.0.5 Ga.sub.0.5 As layer 42 of 85 nm thickness separated by a lower spacer superlattice 44. As illustrated in FIG. 4, the lower spacer superlattice 44 consisted of eight GaAs layers 50, 52 and 54 alternating with seven Al.sub.0.5 Ga.sub.0.5 As layers 56. All the AlGaAs layers 56 were of 1.7 nm thickness. However, the GaAs layer thickness decreased from the bottom toward the top. The bottom three layers 50 were of 1.7 nm thickness, the next three layers 52 were of 1.13 nm thickness while the top two layers 54 were of 0.56 nm thickness. All layers in the lower spacer 16 were similarly doped n.sup.+ with 3.times.10.sup.18 cm.sup.-3 of Si. The quantum well region 18 consisted of three quantum wells with graded index regions on each side. One quantum well could have provided better efficiency. However, it was considered difficult to build. The quantum well structure is specifically illustrated in FIG. 5. Three active quantum well layers 60 of In.sub.0.2 Ga.sub.0.8 As of thickness 8 nm were sandwiched between four GaAs layers 62 of thickness 10 nm. The lasing wavelength was determined by both the composition and thickness of the InGaAs layers 60. In order to better confine the carriers to the quantum well, there was provided a lower graded index layer 64 of thickness 20 nm which was linearly graded from Al.sub.0.5 Ga.sub.0.5 As at the bottom to GaAs at the top. In growth, the composition was changed in 2 nm slices. Similarly, there was provided an upper graded index layer 66 of 20 nm thickness changing from GaAs to Al.sub.0.5 Ga.sub.0.5 As during growth. All layers 60, 62, 64 and 66 in the quantum well region 18 were nominally undoped. During the growth of the quantum well region 18, the substrate temperature was reduced to 540.degree. C. As illustrated in FIG. 6, the upper spacer 20 consisted of a layer of Al.sub.0.5 Ga.sub.0.5 As of thickness 93.9 nm doped p.sup.+ with 2.5.times.10.sup.18 cm.sup.-3 of Be. Furthermore, for the deposition of the upper spacer 20 and mirror 22, the substrate temperature was raised again to 580.degree. C. Most of the upper mirror 22 was composed of twelve periods 70 of an AlAs layer 72 of 68 nm thickness and a GaAs layer 74 of 57 nm thickness. Additionally, each period 70 contained first and second upper mirror superlattices 76 and 78 in order to facilitate electron transport between the AlAs and GaAs layers 72 and 74. As illustrated in FIG. 7, each first upper mirror superlattice 76 consisted of two AlAs layers 80 and two GaAs layers 82, all of 1.13 nm thickness. The second upper mirror superlattice 78 was considerably more complex and changed from a GaAs-rich superlattice at the bottom to an AlAs-rich one at the top in order to match the adjacent AlAs and GaAs layers 72 and 74. Specifically, as illustrated in FIG. 8, the second upper mirror superlattice 78 consisted of a first two-period superlattice of two Al.sub.0.5 Ga.sub.0.5 As layers 84 of 0.56 nm thickness and two AlAs layers 86 of 1.13 nm thickness, a second superlattice of two more Al.sub.0.5 Ga.sub.0.5 As layers 88 of 1.13 nm thickness and two AlAs layers 90 of 1.13 nm thickness, a third superlattice of two GaAs layers 92 of 1.13 nm thickness and two AlAs layers 64 of 1.13 nm thickness, a fourth superlattice of two more GaAs layers 96 of 1.13 nm thickness and two more Al.sub.0.5 Ga.sub.0.5 As layers 98 of 1.13 nm thickness, and a fifth superlattice of two GaAs layers 100 of 1.7 nm thickness and two yet further Al.sub.0.5 Ga.sub.0.5 As layers 102 of 1.13 nm thickness. In the bottom three periods 70 of the upper mirror 22, all the layers 72, 74, 76 and 78 were doped p.sup.+ with a concentration of 2.5.times.10.sup.18 cm.sup.-3 of Be while the concentration was raised to 5.times.10.sup.18 cm.sup.-3 for the upper nine periods 70. The upper mirror 22 was completed, as illustrated in FIG. 6, with another first upper mirror superlattice 76, as AlAs layer 104 of 27 nm thickness, another second upper mirror superlattice 78 and a GaAs layer 106 of 3 nm thickness. The doping continued at 5.times.10.sup.18 cm.sup.-3 of Be. The GaAs layer 104 was delta-doped to a surface concentration of 10.sup.13 cm.sup.-2 Be, which was less than a monolayer of Be. The delta-doping was accomplished by turning off the other sources. Schubert et al have reported a similar type of delta-doping in an article entitled "Delta-doped ohmic contacts to n-GaAs" appearing in Applied Physics Letters, volume 49, 1986 at pages 292-294. However, their multiple delta-doping planes were all evenly spaced away from the surface within the semiconductor. An alternative to delta-doping the GaAs would be to deposit an InAs layer, delta-doping it and then covering the delta-doped InAs with a 5 nm thick GaAs layer to achieve the surface contact while preventing the oxidation of the delta-doped area. It is noted that a total of 504 layers were performed in the MBE growth cycle to grow a heterostructure of about 5.3 .mu.m height. At the completion of MBE growth, the sample was quickly moved to a thermal evaporation chamber to be coated with the gold layer 24 to a thickness of 150 nm. The minimum exposure to air reduces the surface oxidation of the semiconductor. Alternatively, the semiconductor structure could be capped with As in the MBE chamber. The As cap would then be desorbed in the thermal evaporator immediately preceding the Au evaporation. Silver could be thermally deposited in place of the gold for better reflectivity. Indium or aluminum could be deposited by MBE to replace the gold layer 24 and thus avoid any possibility of oxidation. At this stage, the wafer has a uniform planar structure and the pillar structure remains to be defined. An optical lithography process then was followed. Resist was spun onto the gold layer 24 and was contact exposed to an optical pattern and developed so as to leave the gold layer 24 exposed above the intended pillars 12. Nickel was then deposited to a thickness of approximately 0.15 .mu.m. Chromium or titanium could replace the nickel. Any of these metals could alternatively be deposited by electrodeposition or sputter deposition. The sample was then washed in acetone so as to remove any remaining photoresist. That is, the nickel away from the pillar 12 was lifted off. A u-v stabilized photoresist, such as AZ-4110, could be used to eliminate the need for the nickel ion-milling mask. Chemically assisted heavy-ion etching was used to reduce electrical damage to the sidewalls. Such reduction is required for lasers of small cross-section since a heavily damaged sidewall will dominate electronic effects as the cross-sectional area to sidewall area is decreased. Xenon was used for the ion species although other ions heavier than argon, such as krypton, should also reduce damage relative to argon. The reduction of surface damage on a planar surface by using xenon has been disclosed by Pang et al in a technical article entitled "Effects of ion species and adsorbed gas on dry etching induced damage in GaAs" appearing in Journal of Vacuum Science and Technology B, volume 3, 1985 at pages 398-401. The reduction of sidewall damage by use of Cl.sub.2 assisted Ar milling has been discussed by Scherer et al in a technical article entitled "Electrical damage induced by ion beam etching of GaAs" appearing in Journal of Vacuum Science and Technology B, volume 6, 1988 at pages 277-279. As illustrated in FIG. 9, the chemically assisted heavy-ion etching was performed in a vacuum chamber 110. A pumping stack 114 maintained a base pressure within the chamber 110 of 1.times.10.sup.-7 Torr. A sample 116 was loaded into the pumped chamber 110 through a load-lock 118. The sample 116 was held on a sample holder 120 heated to 100.degree. C. The Cl.sub.2 was supplied through a reactive gas supply tube 122 connected to two nozzles 124 flooding the face of the sample 116. The Cl.sub.2 gas flow was maintained at 10 sccm. A mass spectrometer 126 was used to analyze the reaction products during the etch. If desired, the Cl.sub.2 could be pre-ionized to Cl.sup.-, which is more chemically active, in a microwave cavity or a hot (.apprxeq.2000.degree. C.) gas nozzle. A Kaufmann ion source 128 was used to generate ion beams of Xe.sup.+ with a voltage of 1000 eV. Xenon was supplied to the ion source 128 through an inert gas supply tube 130, to which a mass flow controller maintained a Xe flow of 4.5 sccm. The Xe ion flux at the sample was monitored with a shutter and maintained at 75 .mu.A/cm.sup.2. Under these conditions, the etch rate of Xe.sup.+ /Cl.sub.2 was 1.2 .mu.m/minute. The etching was continued to the full 5.5 .mu.m height of the deposited structure. However, the etching could have been stopped just below the quantum well layer 18, which would provide better heat sinking. The lower lead 28 was connected to the n.sup.+ substrate 10 by indium soldering although spot-welding is an alternative. It is noted that the substrate 10 could have been semi-insulating GaAs with an n.sup.+ epi-layer on its surface. The processing of the tested samples stopped at this point and the upper contact 26 was provided by a movable probe having a tip of radius .apprxeq.5 .mu.m. The lithographic mask provided a large number of lasers having 2, 3, 4, and 5 .mu.m diameters on a 3.times.5 mm chip. The device density was about two million per square centimeter. Individual lasers were driven by the lower contact 28 and the movable probe. Light was monitored through the substrate 10, which was polished on the back side. Shown in FIG. 10 is the lasing light output for a 3 .mu.m laser at 958 nm taken with 50 ns voltage pulses at low duty cycle. At the current threshold of 1.3 mA the voltage was about 15 V rising to 20 V at 3.5 mA. The 5 .mu.m lasers required 8 V and 2 mA for threshold. The 2 .mu.m lasers were found to require about 20 V for threshold. The lasing wavelength varied by 1.5 nm over the chip. Another embodiment was fabricated having a single quantum well but otherwise corresponding to the fully described embodiment. This sample showed a somewhat lower current threshold for lasing but also a lower differential quantum efficiency than the three quantum well principal embodiment. The process described above could be improved in a number of respects. The chip with the pillar structure etched into the heterostructure could be planarized with polyimide. The polyimide would then be etched back with O.sub.2 in order to expose the top contacts. Spin glass could be substituted for polyimide. It is recommended that the etched heterostructure be surface passivated with sulfur or selenium, as has been described by Sandroff et al in a technical article entitled "Electronic passivation of GaAs surfaces through the formation of arsenic-sulfur bonds", appearing in Applied Physics Letters, volume 54, 1989 at pages 362-364. Selenium passivation has been shown to reduce the threshold current by 50% in these structures. Semiinsulating AlGaAs or AlAs or insulating SiO.sub.2 can then be regrown on the etched sidewalls to permanently passivate these surfaces. Then relatively thick gold deposited around the electrically insulated sidewalls can be used both for the upper contact and to heat sink the entire pillar laser. A mesa-like structure of non-circular shape could be substituted for the described circular mesas or pillars. Although the above embodiment involved the AlGaAs family of semiconductors, there are advantages to using InP-based materials. In this case, the Cl.sub.2 chemically assisted etch would be changed to HBr or I.sub.2. A mixture of CH.sub.4 :H.sub.2 has also been found useful for chemically assisted ion beam etching. Low loss and small area lasers have been achieved in the described embodiments because of the strong waveguiding provided by the large refractive index difference .DELTA.n between the semiconductor pillar and the vacuum on the outside. It is well-known that cavities with low loss and small area cannot be made without incorporation of some waveguiding structure. For nonguiding structures, the following expression in terms of effective cavity length L, vacuum optical wavelength .lambda., refractive index n, total cavity losses per pass S, and minimum cavity cross-sectional area A.sub.min is valid: ##EQU1## That is, there is a minimum cross-sectional area A.sub.min below which lasing does not occur. For small loss S, the finesse of the cavity is equal to .pi./S so that S can be calculated from measured values of finesse. The exact value of the constant k depends on exactly how the area is defined (e.g., bounded by where the intensity falls to 1/e or 1/e.sup.2 of the maximum intensity. This constant k has been determined in a separate experiment to be about 0.25. By normalizing this expression, a waveguiding confinement factor W for a cross-sectional area A can be defined as: ##EQU2## The confinement factor W will be less than unity in the case of no waveguiding and greater than unity when guiding occurs. Ibaraki et al have disclosed in a technical article entitled "Buried Heterostructure GaAs/GaAlAs Distributed Bragg Reflector Surface Emitting Laser with Very Low Threshold (5.2 mA) under Room Temperature CW Conditions" appearing in Japanese Journal of Applied Physics, volume 28, 1989, at pages L667 and L668 a weakly waveguided surface emitting laser of diameter 5 .mu.m, length about 3 .mu.m and losses per pass of about 5%. These quantities yield W.apprxeq.3.5. By comparison, the laser of the principal embodiment includes a 2 .mu.m diameter, 1 .mu.m long cavity with a conservatively estimated loss of 0.9% per pass. This yields W.apprxeq.40, more than 10 times that of the previously disclosed structure. The corresponding values for W of the 3 and 5 .mu.m lasers of the principal embodiment are 17.8 and 6.4. Thus the smaller 2 and 3 .mu.m lasers of the principal embodiment are the first demonstrated strongly waveguiding vertical cavity lasers. This strong confinement is made possible in the disclosed structure by having a very large refractive index difference .DELTA.n between the inside and outside of the waveguide. While both the structure described here and that of Ibaraki et al has n.apprxeq.3.5 inside the guide, Ibaraki et al's structure has n.apprxeq.3.2 on the outside while the present device has n=1. Thus, the value of .DELTA.n for the disclosed embodiments is 2.5 versus 0.3 for Ibaraki et al. All known prior-art electrically pumped surface emitting lasers with a vertical cavity have structures similar to that of Ibaraki et al. Thus, it is highly unlikely that the prior technology can be extended to produce devices with a waveguide confinement factor much larger than 3.5. It is not required that the laser-containing pillar be free standing in order to obtain the large refractive index difference .DELTA.n. As is shown in TABLE 1, the III-V semiconducting materials of interest have a refractive index n between 2.9 and 3.6. Alloys of these materials have similar values. Layers of these materials have an effective index intermediate between those of the constituent layers. TABLE 1 ______________________________________ n ______________________________________ GaAs 3.5 AlAs 2.9 InGaAs 3.6 ZnS 2.5 air/vacuum 1.0 glass 1.5 ______________________________________ On the other hand, most non-III-V materials that would be used in conjunction therewith have a refractive index n that is substantially less. Therefore, the III-V material in the pillar should be surrounded by non-III-V material. However, there are several considerations. The pillar may have its sidewalls passivated by a thin layer of AlGaAs. As long as the thickness of this passivating layer is considerably less than an optical wavelength, taking into account the local refractive index, it will have small effect on the effective refractive index difference .DELTA.n. Also, at a large optical distance from the pillar of approximately 10.multidot..lambda. or more, approximately 10 .mu.m, the presence of a III-V material would have little effect. Based on these observations, a general rule for obtaining a large refractive index difference .DELTA.n is that the III-V pillar defining the resonant cavity between the mirrors be surrounded on its sides by a continuous region of material not containing any III-V semiconducting material. This continuous non-III-V region should be located within at least an optical distance of 10.multidot..lambda. of the pillar and have a thickness of at least .lambda./100. By means of the novel structure and processing of the present invention, very small and efficient semiconductor lasers have been achieved. They have been built of materials amenable to electronic integrated circuits. Accordingly, such lasers can be incorporated into laser arrays in opto-electronic circuits. * * * * *


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Arkansas forward Marshawn Powell (33) and guard Marcus Britt (12) battle for position against Kentucky forward Josh Harrellson during the first half in Fayetteville, Ark. The Razorbacks won 77-76 in overtime to upset the No. 22 Wildcats. The win snapped a 10-game losing streak Kentucky.
Mississippi forward Terrance Henry (1) and guard Zach Graham (32) team up for a block against Arkansas guard Julysses Nobles during the second half in Fayetteville, Ark. Graham had 17 points and eight rebounds, while Henry added 11 points and eight rebounds to help the Bulldogs notch a 69-60 road victory over the Razorbacks.
Auburn guard Earnest Ross, bottom, tries to gain control of a loose ball as Arkansas guard Rickey Scott (3) grimaces in pain during the first half of their game in Fayetteville, Ark. Scott was escorted off the court with a leg injury.
Ohio State wide receiver Dane Sanzenbacher (12) dives on a fumble by teammate Terrelle Pryor in the end zone for a touchdown against Arkansas during the Sugar Bowl in New Orleans. Ohio State's Buckeyes withstood Arkansas' second-half rally to win 31-26.
Arkansas Razorbacks team members gather around the Boot trophy after beating LSU 31-23.
Arkansas defnder Jerico Nelson knocks the ball loose from Mississippi State running back Vick Ballard's grasp during overtime in an SEC tilt in Starkville, Miss. The Razorbacks left with a 38-31 double-overtime victory.
College of Charleston's Dustin Scott fends off pressure from Arkansas' Michael Washington and Steven Hill, rear, to secure a rebound during the first half of their game in San Juan, Puerto Rico. It was one of the few the Cougars were able to keep away from the Razorbacks, who out-rebounded them 53-27 on their way to a 75-49 win.
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Our 2nd Function 20.5.12
I would luv to give you all a great BIG hug and a great big……THANK YOU.
The Engagement for Brad and Tania, was just another wonderful example of your Joint effort, of how you
all can work together and make everything so special for those having the function.
The event was outstanding.
Everything was effortless in punctuality and quality of service.
You have a great standard of quality to which our guests complimented us on all Day.
The waitresses were efficient and friendly and should be a credit to you both.
Everyone loved the Ambience and Atmosphere that you have bought to the Function Room and the warmth
that the old building has. It all made the Day a raging success.
We can only look forward the next wonderful event in 2013…….The Wedding.
Can hardly wait to see the room all fitted out it's finery of Silver Cutlery and Beautiful Candelabra's.
We now know you Both will make that day Again Very Special for us all.
Thanks Again….
The Montagnese & Trigili Families.
PS : You certainly Know you have high standards when the guests comment on HOW CLEAN
The Toilets are…..
- Corporate Event Entertainment
- Engagement Celebrations
- Function Centres
- Wedding Receptions
- Wedding Venues
Special Offers
From June-August book your wedding with us and receive your ceremony complimentary or an upgrade to our wonderful silver candelabras as your centrepieces.
In the colder months of June, July & August we offer your ceremony free of charge. And if this doesn't suit you we can offer you our free upgrade to our silver candelabras as the centre piece on your table.
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Manarin Investment Counsel is excited to announce that the firm is officially operating at its new office building, five minutes ...
Why is the Fed Hiring an Emergency Preparedness Specialist Familiar with DHS Directives?
Why is the Fed Hiring an Emergency Preparedness Specialist Familiar with DHS Directives?
January 9, 2015
The U.S. Treasury recently spent $200,000 on survival kits for all of its employees who oversee the Federal banking system. These kits, which according to an article published by Freebeacon.com will be delivered to every major bank in the United States, will include a solar blanket, food bar, water-purification tablets, and dust mask (among other things).
What's even more confusing is that, according to an article published by Zerohedge.com, two days before the survival kit RFP solicitation became public, the Fed's recruiting Twitter account tweeted that the Fed was "hiring an emergency preparedness specialist familiar with Department of Homeland Security directives."
Both moves are puzzling, considering the Fed is known as a safe institution where economists contemplate the country's monetary system.
As the Zerohedge.com article asks: "just what do they know that the rest of us don't?"
The Fed's Risky Bet on Growth
September 29, 2014
A recent piece by Mohamed El-Erian published on Bloomberg.com stated that the U.S. Federal Reserve is trying to generate growth from a stimulus policy that relies heavily on artificially boosting stock and bond markets.
Through its programs, the Fed is running a higher risk of financial instability, with an increasing dependence on an inept Congress. Recently, the Fed confirmed that it will end its exceptional bond-buying program in October, yet did not change its policies to end near-zero interest rates – an outcome that was widely expected for this period of time in the recovery.
The reason? The Fed hopes to create momentum that will more than offset the increased threat of financial instability.
With the political posturing ahead of November's elections, it is unlikely that lawmakers will make much progress on any economic measure important for the country. Although the private sector is growing more confident, it still lacks much of the necessary growth to increase velocity. Time is ticking, and if growth doesn't pick up, the Fed's policy bet could end in a large disappointment.
The Fed's Massive Power Grab
August 14, 2014
Over the past several years, the Federal Reserve has "seamlessly morphed from an institution that occasionally intervened in financial markets to a monster that apparently wants to control a great deal of the U.S. financial system," according to a recent article by Brian Wesbury published by First Trust Portfolios.
In the article, Wesbury provided examples of how, throughout history, the Fed has always looked to expand its influence and power. "In the thirty years, between 1977 and 2007, its balance sheet (the monetary base) averaged 5.4% of US GDP. Today, it's 22.4%. Never, in the history of the United States, outside of the military in World War II, has one government institution been so dominant."
And it's continuing to expand. The Fed is in the process of adapting a new management technique called "macroprudential regulation." In a nutshell, this means the Fed will try to regulate specific financial system behavior to avoid economic problems. However, this technique, like many others, offers opportunities for the Fed to increase its power even more.
Click here to read more.
Federal Reserve Gone Wild
May 16, 2014
Over the past seven years, the Federal Reserve has increased the size of its balance sheet from about $850 billion in 2008 to $3.96 trillion in 2014.
It implemented Quantitative Easing by "creating" excess bank reserves that were above and beyond what was required. Now, it looks like the Fed will try to finish tapering then raise interest rates without decreasing its own balance sheet.
According to a recent Monday Morning Outlook report from First Trust Portfolios, these recent moves will lead to all kinds of problems, including a possible "arms race" in the financial system, where interest rates must be raised faster and higher than any of us want.
Click here to read more.
Milton Friedman was correct and the Fed has forgotten
April 7, 2014
Economist Milton Friedman was known for teaching us that the "transmission mechanism" for central bank policy works through the quantity of money, or amount of money injected into or subtracted from the economy.
But several members of the Federal Reserve apparently don't believe this anymore.
As a recent blog post by First Trust Portfolios reports, the Fed plans to end bond purchases later this year, and then, "without unwinding QE, start to raise the federal funds rate."
Unfortunately, excess reserves are the problem, not the level of interest rates. And in the end, this new move by the Fed creates a big risk.
The Fed's Mistakes of 2008
March 24, 2014
After reading through the Federal Reserve's minutes from 2008, Brian Wesbury, chief economist at First Trust Portfolios, identified several mistakes the board made during that crucial year.
He shares some of his findings in a recent Wesbury 101 video.
An underlying theme, Wesbury reports, is that "the Federal Reserve never understood until the end of the year the dramatic nature of the problems facing the economy." They thought they could fix any problem by using a "hammer" to either inject liquidity or lower interest rates. We know now that a bigger problem needed to be addressed.
Click here to watch the complete video.
The Federal Reserve Can't Solve Unemployment Problems
March 7, 2014
Attention continues to be focused on the Federal Reserve with the nomination and subsequent confirmation hearings of Janet Yellen to replace Ben Bernanke as Chair of the Federal Reserve Board. Most commentators believe Ms. Yellen will continue the Fed's current policy of easy money and low interest rates. The Fed has set targets of 2.5% inflation and 6.5% unemployment as they continue to purchase $85 billion of treasuries and mortgage-backed securities a month. Yet even with interest rates held at near zero for an extended period and the liquidity efforts of three rounds of quantitative easing, which have resulted in an unprecedented expansion of the Fed's balance sheet and the money supply, we continue to experience slow economic growth, an unemployment rate in excess of 7%, and over a million fewer jobs than at the start of the recession.
It has become clear that the tools available to the Federal Reserve (interest rates and quantity of money) can't solve the unemployment problem. Even so, the media continues to speculate on when the Fed may begin to taper or phase out their massive purchases, and how the economy will be impacted by that change. In reality, if the Fed were to stop the $85 billion per month of QE3 purchases overnight and not tell anyone, we would see very little change in business as usual. The reason: the money is held in bank reserves and is not in circulation. This is the same reason we currently have very low inflation.
Companies have hundreds of thousands of open jobs because they can't find qualified employees. The manufacturing jobs of today are not the manufacturing job my father had. Today's jobs require technical skills. The United States' manufacturing sector is as large as it has ever been, but because of technology, we make more with fewer workers. Bureau of Labor Statistics data indicates that the 2012 unemployment rate for individuals with a bachelor's degree was 4.5%. For high school dropouts, the unemployment rate was 12.4%. The challenge we face is how to train people to do the jobs that are open. Why are businesses not training the people they need? This leads us to the bigger problem: fiscal policy.
As I mentioned earlier, the Federal Reserve's tools for monetary policy are interest rates and the quantity of money. Fiscal policy is set by the U.S. Congress and the president. The tools for fiscal policy are taxation and spending.
The Small Business Administration data indicates that small business "accounted for 64 percent of the net new jobs created between 1993 and 2011." Yet today, small businesses are not adding people. The No. 1 fear of small business people today is regulation with taxes second. The biggest regulation fear appears to be the Affordable Care Act. Small business owners are afraid to borrow money to grow their business and hire new employees.
And while our government continues its spending spree, large companies are hoarding cash. Moody's currently estimates that non-financial companies are holding almost $1.5 trillion on their balance sheets, up 81% since 2006. The reason: "zero clarity" with respect to U.S. fiscal policy. Macroeconomic Advisors estimates that fiscal policy uncertainty has cost the U.S. 900,000 jobs since 2009 and shaved three-tenths of a percent per year from economic growth.
The solution to the unemployment problem boils down to fiscal policy and a reduced regulatory burden on business. History tells us when government gets out of the way, business grows, employment grows, and the economy grows. The Federal Reserve can't fix fiscal policy - congress and the president can. Remember that one of President Kennedy's first acts was to cut taxes so that the economy would grow.
Unless noted, labor market figures courtesy of U.S. Department of Labor.
Manarin Investment Counsel Offers Special Screening of "Money for Nothing: Inside the Federal Reserve"
February 18, 2014
One hundred years after its creation, the power of the Federal Reserve has never been greater. Markets around the world hold their breath in anticipation of the Fed Chairman's every word. Yet the average American knows very little about the most powerful financial institution on earth.
You're invited to learn more during a special screening of "Money for Nothing: Inside the Federal Reserve," dubbed "the first film about the next crisis," on Monday, Feb. 24 at 7 p.m. and Tuesday, Feb. 25 at 2 p.m. at the Manarin Investment Counsel offices, 505 N. 210th St.
Click here to view a special video invitation from Roland Manarin.
The movie is the first film to take viewers inside America's central bank and reveal the impact of Fed policies – past, present and future – on our lives. As Ben Bernanke's tumultuous tenure comes to a close, join Paul Volcker, Janet Yellen, and many of the world's best financial minds as they debate the decisions that led the global economy to the brink of collapse and ask whether we might be headed there again.
Space is limited, so call the office at 402-330-1166 by Friday to reserve your spot. See you there!
The Chairwoman and QE
November 26, 2013
With her confirmation hearing behind her, it's only a matter of time before Janet Yellen replaces Ben Bernanke as head of the Federal Reserve.
Many people wonder: will Yellen continue her quantitative easing program when she begins her term in January?
In a recent Wesbury 101, Brian Webury, chief economist at First Trust Portfolios, argues that Yellen is in "no way ready to end quantitative easing," especially as she calls it "a positive contribution to growth," impacting housing, bonds and the stock market.
Wesbury disagrees with Yellen's view and explains why. He also offers his thoughts on what else might be on the Chairwoman's agenda when she begins her term in January.
The Real Problem Isn't Janet Yellen
October 23, 2013
The problem with the Federal Reserve does not lie in President Obama's recent decision to choose Federal Reserve Vice chairman Janet Yellen to replace Fed Chairman Ben Bernanke when he departs in January.
As a recent article published on forbes.com points out, the real problem lies in the "conceit" of the Federal Reserve itself. Namely, the fact that the Fed is not currently bound by any monetary rule and the supply of money is not determined by market demand.
Steps toward fixing the core of the Fed's problems would involve recognizing the limits of monetary policy and "the danger of concentrating power in a few individuals who have complete discretion to dictate monetary policy in a world of pure fiat money."


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Properties in over 36 countries in 11 languages
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City | las vegas |
State | new york |
Zip Code | 94131 |
Neighborhood | manhattan |
School | adams elementary school |
County | king county |
The supply of housing inventory exceeds demand. Buyers have the advantage over sellers due to the abundance of homes on the market, with homes often selling at reduced prices. Price drops are common as sellers compete to find buyers.
Rental property is in high demand and availability is low. Rent prices have increased by 11% over the past 3 months. This is 55% lower than the state average of $2,642 and 31% lower than the country average of $2,242.
Trend data coming soon.
For Sale: 407 | New: 96 | ||
$301,136 | $239,097 | Recently Sold: 552 | Reduced: 154 |
Average Home Price | Average Sold Price | Property Records: 14,950 | Foreclosed: 1 |
The average home price in 32940 is $301,136, which is 25.9% lower than the average sold price in 32940 ($239,097) . The average home price per square foot in 32940 is $137 and about 4% of all homes in 32940 sold in the last 6 months. For 32940 home values, real estate prices, and city market trends, research the 14,950 property records or search our 552 recently sold or 407 homes for sale listings. The listings and properties in 32940 are only a part of the 7,303,748 properties and 210,827 homes for sale in Florida. Because of this, the average home price and average home value of 32940 also influence the average home price $201,545 and average sale price $243,116 of Florida. Listing counts, 32940 home prices and home values in 32940 are sourced daily from listing and property data on realtor.com®, which is the most up-to-date and accurate aggregation of real estate listings in the industry and includes approximately 800 regional MLSs and is the official website of the National Association of Realtors®.
©1995-2015 NATIONAL ASSOCIATION OF REALTORS® and Move, Inc. All rights reserved
realtor.com® is the official site of the National Association of REALTORS® and is operated by Move, Inc., a subsidiary of News Corp.
REALTOR®, realtor.com®, the spherical icon of a house within a circular map, the "WHERE HOME HAPPENS" tagline and stylized logo treatments including any one or more of the foregoing are trademarks of the NATIONAL ASSOCIATION OF REALTORS® and are used with its permission. These and all other trademarks used in this work are the property of their respective owners.


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Eva Ysabel has completed online and offline ID verification.
Very nice and clean place. The door men were helpful and she even had one of them bring a fan for us as it was getting hot. It was also very quiet. It was really close to many things in Miraflores. All in all, a perfect place to stay. Thanks very much Eva!
The apartment was nice, clean, and very well located. Most definitely worth what we paid for it.
Always a pleasure to work with Eva. We have stayed in this apartment before (and also in another of Eva's apartments in the same complex). The apartment is clean, well equipped, secure, and has a convenient and safe location. Eva is responsive to questions and concerns and very accommodating to our needs. Siempre hemos tenido muy buenas experiencias con Eva. Nos quedamos en este departamento una vez antes (y también en otro departamento de Eva en el mismo edificio). El departamento es limpio, cuenta con todo lo necesario para un estadía, seguro y tiene una ubicación conveniente y seguro. Eva siempre responde dentro de poco a todas nuestras consultas y dudas y nos ayuda con todas las necesidades.
Eva was really great and checked in on us a few times to make sure we had everything we needed. She arranged everything through the very nice doorman and encouraged us to reach out if anything was wrong. The apartment was really well stocked and just what we needed for the two weeks.
Todo estaba preparado cuando llegué, simple y fácil. Eva estuvo absolutamente pendiente de mis necesidades. Los porteros del edificio estaban perfectamente coordinados y fueron amables, atentos y resolutivos. El apto está en una zona excelente para el visitante sea de negocios o turismo.
Mi estadía en el depa de Eva fue buenaza, sin cualquier problema. Esta fue la segunda vez que me había quedado en uno de sus departamentos. Viajo a Lima con frecuencia por trabajo y la ubicación en Miraflores, media cuadra de la Avenida Larco, es la mejor. Puedes llegar a pie a casi todos los mejores restaurantes de Lima, a la estación del Metropolitano, al malecón para caminar o hacer deportes, a varios Starbucks, a LarcoMar, al Mercado Indio. El departamento cuenta con una cocina con todos los aparatos, un lavador, televisores con cable, wifi y teléfono fijo. Es limpio y además ahora es nuevamente pintado y con una nueva cama queen. Los conserjes atienden 24 horas al día y brindan una buena atención. Además, Eva es bien amable y siempre me responde al toque por cualquier consulta o problema. Se le recomienda este departamento a cualquier persona. My stay in this apartment was excellent, without any problems. This was my 2nd stay in one of Eva's apartments in Lima. I often travel to Lima for work. The location, 1/2 block from Avenida Larco, is the best. You can reach most of the best restaurants in Lima on foot. You can also walk easily to the oceanside area where you can walk or go running, multiple Starbucks, LarcoMar (a nice shopping center with a movie theater with movies in English--not dubbed!), and the Indian Market (large artesian market featuring products from all parts of Peru). The apartment itself has a kitchen with all appliances, washing machine, wifi, cable TV x2. The doormen are there 24/7 and are quite helpful and nice. Eva is always a pleasure to work with. She responds almost immediately to any concerns or questions that I email her. I would definitely recommend this apartment to anyone. For tourists: this area is one of the safest in Lima. There are police officers and security cameras all over the place. I am a petite woman and do not feel concerned when I walk by myself late at night.
Very nice experience. Very clean. Lol but even the toilet paper was the nicest I've had in Peru. Great location however I didn't know just how great because there was no map, no list of suggestions of places to go in the area and no meeting with the host. It took a couple of days of exploring on foot to get the lay of the land but once I did it was great. Very close to the ocean, close to Kennedy Park and loads of great restaurants. I'd certainly stay there again. Very nice place.
Very clean place in a great location. Really enjoyed my stay here. Eva is very nice and responsive, and the staff is very eager to help. Highly recommend it.
Toda la logística perfecta, el apto estaba listo cuando llegué y todo en orden. La ubicación del apartamento es muy buena, a 2 minutos de larcomar, muy fácil conseguir transporte y sin ruido de la calle en el apartamento. Eva estuvo pendiente de que no faltara nada. El apto perfectamente dotado. El edificio no es el más moderno, pero bien ubicado.
We very much enjoyed out stay at Eva's apartment. The location was fantastic and in the heart of Miraflores. Its a quick walk to the cliffs, to outstanding food, to Larcomar, and a grocery store. The incredibly friendly doormen let us in and out each time, and gave us the keys and apartment details when we first arrived late at night. The location was relatively quiet, but I don't know how far away you can get from traffic noise in Lima. Hot showers were somewhat difficult to navigate since we had four adults and the tank was quite small. Also, there were only two towels in the apartment even though I had booked the place for four people. We ended up using our camping towels without much problem. The beds were quite short, but we managed ok, and the washing machine was incredibly helpful, although drying clothes in Lima misty weather is not recommended! Overall, an easy, small and clean place without a lot of frills or extras. We did not meet Eva, but someone called on our second day to see if everything was alright.


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Hey guys, Im lookin into buying an audi s3. maybe spending up to 6/7k on one. does any one have and advice or suggestions before i go searching?? just dont really know anything about audis! Thanks dudes
hi try this thread http://www.audi-sport.net/vb/showthread.php?t=5163 its in the s3 section at the top.
What your total budget? I take it you also have a current car to part ex as I think you'll struggle to find a straight S3 for 6-7 grand.
yeah i have a vw corrado 2 litre 16v excellant condition, leather seats, alloys etc.. should get £2500 for it. how much u think id find an s3 for? and just to check theres an S3 and an S3 Quattro. whats the difference apart from the obvious 4 wheel drive, power etc... is there body difference?
There is only one S3, they are all Quattro! There was a facelift around 2000, look for single piece headlamps, red/white rear lenses, different badges and dashboard, and 225BHP(on paper) for the facelift version, though you'll most probably be looking at a pre-facelift 210bhp on your budget. Body on the S3 is slightly wider than those of an A3 aswell. Goodluck
oh right. thats a great help then thanks alot. someone told me otherwise about there being an s3 and a quattro version. will start hunting. tanks agian
seems like a good read of the s3 faq is in order http://www.audi-sport.net/vb/showthread.php?t=5163 http://www.audi-sport.net/vb/showthread.php?t=14737


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Dictionary » N » Nitriles Nitrilesnitriles organic compounds containing the -cn radical. The concept is distinguished from cyanides, which denotes inorganic salts of hydrogen cyanide. Please contribute to this project, if you have more information about this term feel free to edit this page
This page was last modified 21:16, 3 October 2005. This page has been accessed 930 times. |
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Meade - 10 " LightBridge Truss-Tube Dobsonian Deluxe Telescope With A Free Shroud
The Meade 10" Lightbridge is a true astronomical masterpiece. This dobsonian optical tube has abundance of high quality optics to enhance the results. It doesn't stop there however, portability is also an excellence in this scope! With Shroud
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Meade - 108mm Dovetail Ring Set - includes 2 rings with quick adjust/lock and 3 point adjustment screws with Delrin tips
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Meade - 40mm Plossl Series 5000 60° Eyepiece - 2"
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Dr. Michele T. Lagarde-May, MD
Family Medicine
- 3201 S Carrollton Ave
New Orleans, LA 70118 - 1 Location
- (504) 207-3060
Dr. Michele T. Lagarde-May graduated from the University of Kansas School of Medicine in 2003. She works in New Orleans, LA and specializes in Family Medicine. Dr. Lagarde-May is affiliated with Childrens Hospital and Thibodaux Regional Medical Center. She speaks English and Spanish.
Gender: Female
Languages Spoken: English, Spanish
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Medical School: University of Kansas School of Medicine; Graduated 2003
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Bone and cartilage are both connective tissues that feature cells embedded in a solid matrix. In bone, the matrix is mineralized collagen. The collagen gives bones flexibility, elasticity, and strength. A cross section of bone reveals concentric rings of osteons. Bone cells are held in osteons connected by canals and receiving nerve and blood supply. In cartilage, a matrix of collagen is filled with protein fibers, water, and chondrocytes that secrete cartilage. The fibers give cartilage resilience, strength, and elasticity, and the water makes it a good shock absorber. A cross section of cartilage shows fibers and a scattering of cells that secrete cartilage and elastin fibers. Cartilage has no blood supply.
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