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Free Video: Why You Don't Have to Worry About Outliving Your Nest Egg
You can retire in style overseas and live better than you do now for as little as $723 a month.
Live well--including a maid, a driver, and dinners out--all on a Social Security budget.
Arrange health insurance for $150 a month or less...and in some places, you can even enjoy free medical care.
Continue reading:Kathleen Peddicord is the founder of the Live and Invest Overseas publishing group. With more than 25 years experience covering this beat, Kathleen reports daily on current opportunities for living, retiring, and investing overseas in her free e-letter.
Her book, How To Retire Overseas—Everything You Need To Know To Live Well Abroad For Less, was recently released by Penguin Books.
Sign up for Overseas Opportunity Letter
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The Best Places For Living And
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Business listings search results
Browse by Category
Importers (1385)
Search results in category Importers
Found 58 records | Showing page 1 of 6 pages
Dahabshill Transfer Svc
2083 Lawrence Ave W WESTON RD & Lawrence Ave W York, ON M9N 1H7t: view phone4162437448
Map: View location
Diffusion Amor-Lux Inc
555 Rue Chabanel O MEILLEUR RUE & Rue Chabanel O Montreal, QC H2N 2L1t: view phone5143890214
Map: View location
Dynamic Toy Importers Ltd
333 North Rivermede Rd #1 Audia Crt & Rivermede Rd N Concord, ON L4K 3N7t: view phone9057601511
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D & D Trading Corp
247 Woodbridge St CANTERBURY DR & Woodbridge St Fredericton, NB E3B 4R4t: view phone5064551608
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David Taub & Son Ltd Intl Grp
555 Rue Chabanel O MEILLEUR RUE & Rue Chabanel O Montreal, QC H2N 2L1t: view phone5142887271
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Derkach Manufacturing Canada
364 Lougheed Rd #19 Lougheed Rd & Adams Rd Kelowna, BC V1X 7R8t: view phone2504912988
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Desirs De Provence
435 Av Mercille DéSAULNIERS BOUL & Av Mercille Saint-Lambert, QC J4P 2L6t: view phone4506716861
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Dragon Ocean Intl Inc
1693 Av Dollard RéJANE RUE & Av Dollard Lasalle, QC H8N 1T7t: view phone5143683383
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Dss Enterprises
Davimpex Inc
361 Ch De La Rabastaliere E DE BOUCHERVILLE BOUL & Ch DE LA Rabastaliere E Saint-Bruno, QC J3V 2A7t: view phone4502453300
Map: View location
Found 58 records | Showing page 1 of 6 pages
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51 year old man | Granada Hills, CA, USA | Seeking women 30-50 within 50 miles
I would like to find a woman that is secure with herself and enjoys the company of her man...A romantic and honest girl...
Well - I am here to see all of the wonderful women this world has to offer.. I know there is one out there for me!!! I work hard and enjoy truly good hearted people. I am not in a hurry to find someone - I like to be outdoors, stop on the side of the road next to the beach, light a BBQ and watch the sun move across the sky while listening to the sound of waves.. Pretty simple I guess - I enjoy afternoon Golf, Stream fishing in the High Sierra's, Cycling, movies, sushi and late night dinners...And of course romantic nights, mornings and lazy days...
Camping , Coffee and conversation , Business networking , Dining out , Fishing/Hunting , Gardening/Landscaping , Movies/Videos , Exploring new areas , Nightclubs/Dancing , Playing cards , Travel/Sightseeing , Wine tasting
Bowling, Cycling, Golf, Other types of exercise, Skiing, Walking / Hiking
I exercise 3-4 times per week.
I have Birds, Dogs
My 17 year old son has a bird - and we have one dog -
Cabo San Lucas, yosemite, mammoth mountain, cancun, Hawaii, wine tasting, beach
Moorpark College, Moorpark, CA
I enjoy most music, I like watching documentaries, history channel, some sports, I enjoy good foods cabernets and red wines.
Golfing - Cycling, Skiing, Fishing, BBQ at beach, read non-fiction books, movies, dinner, family gatherings, wineries -
I enjoyed the non fiction book - The Wolf of Wallstreet, very fast paced and exciting.
Him | What he is looking for | |
Appearance | ||
Height: | 6'1" (185cms) | 5'0" (152cms) to 5'9" (175cms) |
Body type: | Athletic and toned | Slender, About average, Athletic and toned |
Eyes: | Blue | Black, Blue, Brown, Grey, Green, Hazel |
Hair: | Blonde | Black, Light brown, Dark brown |
Lifestyle | ||
Smoke: | Cigar aficionado | No Way |
Drink: | Social Drinker | Social Drinker |
Occupation: | Sales / Marketing | Artistic / Creative / Performance |
Income: | $100,001 to $150,000 | No preference |
Relationship: | Divorced | No preference |
Have kids: | Yes, and they sometimes live at home (1) | No preference |
Wants kids: | Not sure | No preference |
Background | ||
Ethnicity: | White / Caucasian | Latino / Hispanic, White / Caucasian |
Faith: | Christian / Other | No preference |
Languages: | English | English |
Education: | Some college | High school, Some college, Associates degree, Bachelors degree, Graduate degree, PhD / Post Doctoral |


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Results per page:
License Plates in California
Join 1,972,984 Americans who searched DMV.org for lower car insurance rates:
Search Results - 57 found
California License Plates & Placards Information
Information on obtaining license plates & placards for California. -
How to Surrender a License Plate in CA When Changing Ownership or Moving
Requirements for surrendering CA license plates when selling a used vehicle or moving out of state. Info on how to surrender a license plate varies by state. -
Information for California Drivers With Disabilities
California drivers with disabilities - Resources and information for drivers with disabilities in California -
California DMV Forms - CA DMV Forms for Drivers Licensing & Registration
California DMV forms and publications - Find California DMV related forms and publications for licensing, registration, titling. -
California - Replacing a Lost Registration - Duplicate CA Registration
Can't find your CA car registration? Find out how to get a replacement from the California DMV at DMV.org: The CA DMV Made Simple. -
CA Drivers Guide To Licenses, Registration, Titles, DMV Locations
Get CA DMV locations and hours, licensing and registration info, practice tests, driving records, license plates and more. -
California Automobile Dealer Licensing Forms & Paperwork
Forms required for opening a car dealership in California - Applications, Licenses, Bonds. -
California Other Types of Motorcycles - CA Scooter & Moped Info
If you live in California and own a moped or scooter, find out about CA DMV rules for other vehicle types at DMV.org: The CA DMV Made Simple. -
California Car Registration Guide - Renewals, Online & Mail Options, Forms, & Fees
California car registration information, forms, and procedures. Registration renewal information, new to a state, registering a new vehicle, and non operational. -
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CA DMV registration Renewal information. Determine fees, registration process, tax deduction opportunities, and how to renew in person, over the internet or by mail.- California Car Registration Renewal
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In the course of 13 fascinating hours, Cosmos spans its own galaxy of topics to serve Sagan's theme, each segment deepening our understanding of how we got from there (simple microbes in the primordial mud) to here (space-faring civilization in the 21st century). In his "ship of the imagination," Sagan guides us to the farthest reaches of space and takes us back into the history of scientific inquiry, from the ancient library of Alexandria to the NASA probes of our neighboring planets. Upon this vast canvas Sagan presents the "cosmic calendar," placing the 15-billion-year history of the universe into an accessible one-year framework, then filling it with a stunning chronology of events, both interstellar and earthbound.
From the lives of the stars to creation theories, functions of the human brain, and the ongoing search for extraterrestrial intelligence, Cosmos asks big questions. When appropriate, Sagan offers big answers, or asks still bigger--and yes, even spiritual--questions at the boundaries of science and religion. What's most remarkable about Cosmos is that it remains almost entirely fresh, with few updates needed to the science that Sagan so passionately celebrates. It is no exaggeration to say that Cosmos--for all the debate it may continue to provoke--is a vital document for humanity at a pivotal crossroads of our history. --Jeff Shannon


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About Me
- About gh123man
- Service provider
- City
- Rochester NY -school (Kendall park NJ - home)
- Home country
- United States
- Interests
- android, computer science, computer graphics
- Occupation
- Dowjones intern, R.I.T student
- checkout Tree Task
ADD ON GOOGLE+ - https://plus.google.com/116707674152406292958
SUBSCRIBE ON YOUTUBE - http://youtube.com/gh123man
FOLLOW ON TWITTER - http://twitter.com/#!/gh123man
GITHUB - https://github.com/gh123man
Acer iconia a500 - CM9 /cm10alpha
GSM unlocked Galaxy Nexus- CM10
Moto Atrix 4g - CM9 / stock + modded webtop
2x Moto Droid - CM7
- checkout Tree Task
Contact Info
- Social
- @gh123man
- Google Plus
- My G+ Profile
Most Thanked
Thanks | Post Summary | |
54 | FAQ Q: assert.failed:getprop("ro.product.device")=="Picas so" || getprop("ro.build.product")=="picasso" E:Error in /sdcard/Download/update-cm-9.0.0-RC0-picasso-UNOFFICIAL-signed.zip Status 7 A: Open the zip. Go to META-INF/com/google/android/upd... | View... |
23 | ghROM WHAT IS ghROM? ghROM is a source built rom. It is compiled off of the cyanogenmod7 Repos. This means it was not put together cut/copy/paste style. ghROM is a display of all of the mods I am working on. My aim is to bring a nexus feel t... | View... |
19 | hey everyone. I worked all night last night to bring this to you. I am a lover of stock android so i ported the stock 3D launcher over to the atrix with QHD support. best of all, Its OPEN SOURCE! :) Some of you may know that this has been done... | View... |
18 | news 4/13/12 CM9 is out. see last post for details. thread closing, thanks everyone! 3/31/12 -wow its been a while since i updated this.. progress is good. 3/17/12 -i know this thread is quite a the moment... something big is commin... | View... |
15 | hey everyone. as with the launcher i have also been working on the keyboard. the keys are about as tall as they should be on a normal 4in screen. I also disabled full screen mode. i find it easier, if you dont like it i can post another version o... | View... |


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Get to Work
Explore how to find, get and keep work .
Manufacturing coming back into fashion, booster says
"Manufacturing is suddenly all the rage," writes Alan Tonelson in an essay titled "Up from globalism," that appears in the January issue of Harper's Magazine.
[Read More]
Afraid of outsourcing? What if robots take our jobs?
Self-employed software engineer Martin Ford wonders whether technology is advancing to the point where automation will replace so many jobs that society will face long-term, structural unemployment. The 46-year-old Sunnyvale man has argued his case in a self-published book, "The Lights in the Tunnel." He has summarized his thinking on the blog, Angry Bear. Portions of one such essay appear below as Ford says:
[Read More]
Computer donation allows more free training for jobseekers
Jewish Vocational Services of San Francisco has expanded its offerings of free computer skills classes for job-seekers thanks to the recent donation of 20 new workstations by IBM.
[Read More]
Lessons from a job search
Lessons come in different sizes. When we're talking about a job search, a lesson might come in the form of a bad career move or the loss of a good chance to network. Ideally, a job search makes you stronger because it gives you a sense of independence and the vulnerably you need to ask for help.
[Read More]
Nationally-known outplacement firm offers free career advice
Challenger, Gray & Christmas continues a 24-year tradition by offering two days of free job search advice on Monday, December 28th and Tuesday, December 29th, from 9:00 a.m. to 5:00 p.m., Central Standard Time. The call-in number is 312-422-5010. For details visit www.challengeratworkblog.blogspot.com.
[Read More]
A holiday wish for all: the gifts of work and purpose
In a year when many have lost jobs or homes or both, and others fear being next, let's draw hope from family and friends and have faith in our beliefs and efforts.
[Read More]
Time is better than money for many professionals, especially moms
The world of work remains divided into have-nots and haves. Millions are hard-pressed to even find part-time jobs. But many over-stressed professionals have what economist and author Sylvia Ann Hewlett calls "extreme jobs" that require 60-plus hour work weeks.
[Read More]


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What does the name "Britt" mean? A name is much more than just a name!
B is for bounce, your ability to renew.
R is for refreshing, the sparkling you.
I is for interest, you show in others.
T is for talent, hidden or not.
T is for treasure, that of your friendship.
The name "Britt" is of Scandinavian origin and it means "Exalted, Lofty". It's a name commonly given to both boys and girls. There are 12 other names that are similar to this one.
According to the 1966 U.S. Social Security Administration data, the name "Britt" is not a popular baby boy's name in Illinois. Imagine that, only 5 babies in Illinois have the same name as you in 1966. Across the entire United States a total of only 146 babies also bear the same first name during the same year. From 1880 to 2013, the highest recorded use of the name "Britt" was in 1973 with a total of 142 babies.
Since 1880 up to 2013, your name was recorded 7,455 times in the American baby names history. Do you want to know 'how popular is my name Britt?'
Hey! How's your love life lately? Get a free love reading with the most frank answers. Start to seize every opportunity for success in your life! Did I mention it's FREE? (Sponsored Link; 18+ only)
Your name in reverse order is "Ttirb". A random rearrangement of the letters in your name (anagram) will give 'Ttrbi'. (How do you pronounce that?)
Your past life Britt:
I do not know how you feel about it, but you were a male in your last earthly incarnation. You were born somewhere around the territory of Eastern Australia approximately on 1775. Your profession was philosopher, thinker.
Your brief psychological profile in that past life:
Timid, constrained, quiet person. You had creative talents, waited until that life to be liberated. Sometimes environment considered you strange.
Lessons that your last past life brought to present:
It always seemed to you, that your perceptions of the world are somewhat different. Your lesson – to trust your intuition as your best guide in present life.
Now do you remember?
Britt, do you want to be popular with your friends on social media? Create a name project for all your friends using our mobile app. Cool – check it out – it's free!
Copy or Link to This Page:
Kindly keep the link back to this website. Thank you!
TIP: You can refresh this page to generate a new acrostic for your name.


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Results 1 to 4 of 4
nokia c5-00 insert sim(offline mode ) solu need
please help
try one by one
Insert SIM card and battery
Important: Do not use a mini-UICC SIM card* also known as a micro-SIM card* a micro-SIM card with an adapter* or a SIM card that has a mini-UICC cutout (see figure) in this device. A micro SIM card is smaller than the standard SIM card. This device does not support the use of micro-SIM cards and use of incompatible SIM cards may damage the card or the device* and may corrupt data stored on the card.
- To remove the back cover of the device* pull the release button (1) toward the bottom of the device* and lift the cover off (2).
- Remove the battery and slide the SIM card into the SIM card holder. Make sure the contact area is facing down.
- Insert the battery.
- To replace the back cover* carefully align the top lugs (1)* and line up the back cover* then gently press down until the cover locks into place (2).
- To remove the back cover of the device* pull the release button (1) toward the bottom of the device* and lift the cover off (2).
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Sokolska 39, Prague 02, Prague, Czech Republic (Show on map)
Book now!
based on 17 reviews
Nearest transport:
I. P. Pavlova Metro station (0.2 Km / 3 min walk)
Area recommended for:
Distance to airport:
Prague Ruzyně Airport (12.5 Km)
Top attractions in the area:
National Museum (0.7 Km / 9 min walk)
Prague State Opera (0.9 Km / 11 min walk)
Mucha Museum (1.2 Km / 15 min walk)
Tesco Supermarket (1.2 Km / 15 min walk)
Note: Distances are measured as a straight line, calculated from a starting point to a destination point.
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Oakeshott questions 'unbelievable' Coalition reforms
PUBLISHED: 30 Jan 2013 08:54:00 | UPDATED: 05 Feb 2013 00:25:17PRINT EDITION: 30 Jan 2013Updated | Independent MP Rob Oakeshott has criticised an opposition plan for parliamentary reform, saying the Coalition has been "completely silent" on the issue until now.
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Murals in Senegal and Gambia by RUN
Juxtapoz // Thursday, March 28, 2013
Italian-born, london-based artist RUN recently painted several new murals in Senegal and Gambia. RUN has painted walls all over the world and also works as an illustrator in London.
Mark Whalen "Maze Walkers" @ Blackartprojects, Sydney
Juxtapoz // Thursday, March 28, 2013
Juxtapoz-friend Mark Whalen is set to open a new body of work, Maze Walkers, with Blackartprojects in Sydney, Australia next month. Whalen says of his work, "I paint these puzzles of fantasy and forecasted worlds – these multifaceted scenarios of discovery, roleplaying and problem solving that expose humanity at its most bizarre." That's about right.
Donny Miller, March 2012
Vault // Thursday, March 28, 2013
Donny Miller… what can we say about one of the most irreverant artists working today? In March 2012, we stopped by the Southern California artist's home to discuss his unique brand of conceptual, pop, performance, street, video, and political art. We just released two new Juxtapoz x Donny Miller tees in our webstore... go check those out now, and read this tale...
In L.A.: Travis Millard @ This Los Angeles
Juxtapoz // Thursday, March 28, 2013
This past weekend we stopped by one of our favorite galleries, THIS Los Angeles to check out their second to last exhibition, "No Pressure" new works by Travis Millard. Travis is the CEO and grand marshall of Fudge Factory Comics and runs it out of his home on an almost lost hillside in the Echo Park neighborhood of LA. Photos and more after the jump…
Francisco Reina's 'Altered States'
Juxtapoz // Thursday, March 28, 2013
We are enjoying Spanish photographer Francisco Reina's series Altered States. The manipulated photographs feature blood red colors and mysterious smoke. Francisco feels that 'the picture of the world that is constantly being shown to us has nothing to do with reality because the truth about every single event is buried under a mountain of lies.'
Photorealistic Paintings from Manipulated Photos by Jessica Rebik
Juxtapoz // Thursday, March 28, 2013
Illinois-based artist Jessica Rebik's latest series of work attempts to expand the possibilities of her photorealistic painting. She uses photographic references and unapologetically acknowledges the role of the photograph in her process, making 'the viewer aware of the separation between themselves and the original figurative subject.'
Paintings by Tania Blanco
Juxtapoz // Thursday, March 28, 2013
The paintings of Valencian artist Tania Blanco examine the relationship between humanity and science. His round acrylic paintings are done on canvas or wood panels and have a strange, surreal clinical, doctors office feel to them.
Keith Haring Retrospective @ MAM Paris
Juxtapoz // Thursday, March 28, 2013
The Musée d'Art Moderne de la Ville de Paris is exhibiting a collection of artwork from Keith Haring. Opening April 19th, the show will be hosting 250 pictures on canvas, tarpaulin and from subway walls, making this one of the largest exhibition of Kieth's work ever.
Paintings by Kwangho Shin
Juxtapoz // Thursday, March 28, 2013
This morning we take a look at the paintings of South Korean artist Kwangho Shin. Shin studied Fine Art at Keimyung University and mainly uses Oil and Acrylic.
New Quilled Paper Work from Yulia Brodskaya
Juxtapoz // Thursday, March 28, 2013
Artist Yulia Bordskaya was born in Russia and is currently living in the UK. She has earned an international reputation for her innovative 'quilled' paper illustrations.


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The Ferguson Police Department engaged in patterns of arrests and racial bias that violate the Constitution and federal law, the Department of Justice will say in its report begun after the Michael Brown shooting.
United Airlines, Delta Air Lines and American Airlines have stopped accepting bulk shipments of rechargeable batteries after new government tests confirm such shipments are at risk of causing explosions or fires when overheated.
The MBTA is considering options for compensating customers for storm-related delays.
In a speech that stirred political controversy in two countries, Israeli Prime MinisterBenjamin Netanyahu told Congress on Tuesday that negotiations underway between Iran and the United States would "all but guarantee" that Tehran would get nuclear...
On today's classic CapeCast: Meet Richard Browne, a detectorist from South Yarmouth, who spends hours in the ocean searching for lost rings, coins, jewelry and memories.
Your daily look at late-breaking news, upcoming events and the stories that will be talked about today:
Jessica Collins' husband, Sean, walked to a pub in Boylston on Jan. 18 to order takeout. The 42-year-old father of two young boys has not been seen nor heard from since.
SANDWICH — Its signature rhododendrons still covered in a blanket of white, things have been quiet at Heritage Museums and Gardens after what can only be described as an autumn of controversy surrounding plans and construction of an...
White Ribbon Day is meant to call on men to stand up in solidarity, wear a white ribbon and take a pledge to oppose violence against women and girls.
"We are all in this together," U.S. Rep. William Keating, D-Mass., told the audience of fishermen, regulators and scientists at Boston forum.
Three armed robbers helped themselves to about $4.8 million in gold carried in a broken down Transvalue Inc. armored truck before making their getaway. The armored truck drivers were not injured during the heist.
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George Hamilton IV
Showing recordings 1-10 of 295 that were created in 2012 for songs by George Hamilton IV. The recordings are sorted by date. Click the year links to view recordings for a different year or the page links further down to view more recordings for the currently selected year.
By MitchRoberts in the Style of George Hamilton IV
31 views 2 comments
Audio Recorded
This has always been a favorit song of mine.
By Mad_Skills in the Style of George Hamilton IV
104 views 0 comments
Video Recorded
Just had to give it a try


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"The harder you work, the luckier you get." by Gary Player
Below is the poem entitled Know one's self which was written by poet Toquyen Harrell. Please feel free to comment on this poem. However, please remember, PoetrySoup is a place of encouragement and growth.
Read Poems by Toquyen Harrell
Best Toquyen Harrell Poems
How you feel matters Know you Know you are the only you know most Hide not Know hot is high living Know lots Know knight in shining armor exists Love is king Know love Know getting there is a fun part Know


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TH‐C‐332‐06: Optimization and Calibration Procedures of a Contrast‐Medium Based Subtraction Technique in Digital Mammography


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First Annual American Fine Craft Show Brooklyn
Beaux-Arts Court, 3rd Floor
Come do your holiday shopping at the first annual American Fine Craft Show Brooklyn! Craft aficionados can browse the collections of 90 jury-selected artists and artisans. Works will include ceramics, decorative and wearable fiber, furniture, glass, jewelry, leather, sculpture, and fine art, with many of the nation's master craftspeople showing in New York for the first time.
The craft show entrance fee includes Museum general admission. Tickets are $12 for adults, $11 for seniors, $6 for students with valid ID, and free for children under 10. Visit American Fine Craft Show Brooklyn for tickets. Cash only at the door.
The fair will also be held on December 15.
Upcoming Featured Event
Book Signing: The Case for Loving and Emmanuel's Dream
Saturday, March 07, 2015
Get your copy of the new book The Case for Loving, signed by author and illustrator duo Selina Alko and Sean Qualls. Read more.


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* Makayla Yvonne Hill, infant, of 273 Rome St., Hartwell, died Friday, June 2, 2006. Macks Funeral Home, Hartwell, has charge of arrangements.
* Charles Herman Sparks, 59, of Commerce, died Saturday, June 3, 2006. Little-Ward Funeral Home, Commerce, has charge of the arrangements.
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We are a couple of independent architects, who love to travel, we enjoy very much living in mexico city. My wife and myself love to receive guests and we are always willing to indicate the best places to visit in our city. Pumas soccer team fan, love historic center.
Fernando has completed online and offline ID verification.
We appreciated the contact by e-mail before we arrived and the good wi-fi service during our visit. Fernando readily answered every question we posed. We really liked the location in a quieter section of the city than the Centro and took advantage of the many suggestions made by Fernando and Maria for our stay. It is an easy walk to close by restaurants and parks and taxi transport is almost right outside the door. The apartment is very comfortably designed for two persons and Fernando and Maria have added some amenities like guide books, umbrellas and the use of a washer and dryer that were a great convenience. I loved the fresh flowers and the fruit waiting for us on the table! We highly recommend this property and will stay at this apartment again on future visits to Mexico City.
Nos sentimos muy a gusto. Condesa es de las mejores zonas de México DF. Las intalaciones son muy completas! Es muy fácil coordinar horarios, y Lalo y toda su gente nos ayudaron en todo lo que necesitamos, siempre muy predispuestos.
Muy bueno el servicio y las atenciones Me hicieron sentir en casa
El departamento es espectacular y está ubicado en una excelente zona. Fernando y Eduardo siempre contestaron a todas nuestras preguntas.
Excellent place....beautiful accommodations. Located off the main street this gem offers solitude and privacy in a city where that is hard to find.
Fernando's Condesa studio is absolutely lovely! Great location and the apartment is beautiful. Fernando reached out to make sure our arrival was easy, and gave us a great recommendation for a local restaurant. A perfect end to our vacation!
This is my new favorite place to stay in Mexico City. It was so clean, comfortable, and even nicer than it appears in the photos. I interacted with Lalo more than Fernando, but he was wonderful--very responsive, thoughtful, and helpful. I would stay here again in a heartbeat and definitely recommend it to anyone looking for a comfortable, convenient Mexico City rental.
The place was just as described. Large, private studio. Comfy bed. Huge shared outdoor space. No problem getting in to apartment. Safe, beautiful neighborhood. Would highly recommend.
Fernando responded to my requests very quickly. I did not meet him but I did meet Lalo who picked us up and dropped us off at the airport. I would highly recommend using him for airport transportation. He was knowledgeable about the area and helpful with his recommendations. The apartment was very clean, spacious with a well equipped kitchen. We especially appreciated the beer in the refrigerator and flowers throught the place. The apartment is well appointed and beautifully designed. It is unbelievably quiet making sleeping at night very easy. The location is perfect as we wanted to be within walking distance from the three near by parks, Chapultepec, Espana and Mexico. This is a first floor apartment and so it is rather cool. During the colder months, such as February, it can get a little chilly. Consequently we were appreciative of the space heater and used it quite a bit. I would imagine that in the warmer months, this apartment would be perfect. The internet was perfect, strong signal etc. Books and magazines left behind and provided by owner was a plus especially those that pertained to restaurants and sites in the area. Don't rely on being able to use the washer and dryer at a moments notice. It seems to serve the entire apartment complex and because the water fills the washer so slowly, it takes a LONG time for it to fill. The hot water for the shower needs to be figured out. At the best you can take a sixty second shower with warm water. The shower is the only reason I would be tentative regarding a return visit. If fixed, I would return in a heart beat.
thank you very much for taking time to write a very accurate review; we will work on the things you mention to improve the experience while staying there. About the shower, it does have hot water for a long time, I do have instructions on how to maintain it (at the airbnb manual) but I will make sure to leave them at the apartment. Greetings fernando
It was a short but sweet visit. Lalo was extremely helpful in so many respects. I confer my highest rating to the guesthouse. Dave
Fernando y Maria así como sus hijos campamentistas y parientes son excelentes huéspedes. Muy curiosos de los atractivos de San Cristóbal de las Casas y de Chiapas en general, lo histórico, lo cultural y el medio ambiente. Sensibles y conocedores, como arquitectos que son, del tema del espacio, la luz, los jardines ha sido un gusto hospedarles y son muy bienvenidos en nuestra casa. Rafael
Fernando is one those people you thank life for meeting them. A dependable friend, loving father and a devoted husband. He´s always willing to help. He and his wife, Maria, are two young architects with fresh proposals, with an ecology approach. When they lived in Oaxaca, they where in charge of the Santo Domingo Convent restoration. From this unique experience they achieved the sensitivity to colors and love of art that is present in all their projects. Their apartments are both colorful and carefully set up with all you need to feel comfortable and safe. I very often ask Fer´s suggestions about places where to eat and buy fresh food. You can rely on him to provide useful information about many things concerning Mexico City. What I most appreciate about Fer is his simple, honest and trustful approach to life. His warm smile and readiness to help.


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Welcome to Fashiolista! Discover, save & share the greatest fashion findsfrom anywhere on the web! Sign in with Facebook
Buy it here 87 First found by ccc at abercrombie.com 3 years, 1 month ago @Tag a friend Add to list comments Please sign in to start gossiping Sign in with Facebook or sign up manually There's no gossip yet... Are you sure you want to delete this comment? Cancel Are you sure this is spam? Cancel we love it! (87) tags for this item Abercrombie Heather A&F Abercrombie and Fitch belt cotton Floral floral lace Lace navy ribbon skirt white skirts login to add tags


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Very pleasant stay. Room was comfortable, wifi good without any logon problems. Didn't like the pillows but personal preference. Reported a broken toilet seat and it was replaced promptly. Liked the single-seat restaurant tables with TV screen. Restaurant good without being pretentious.
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Home > Restaurants >
110 First Ave.,
New York, NY 10003
My tasters and I weren't wild about the slightly antiquated, slightly jarring disco soundtrack pulsing through David Bouhadana's popular East Village restaurant (this New Age gaijin sushi chef hails from Florida), or the fact that we were consigned to one of the rickety tables instead of the bar. But there's nothing wrong with the quality of Bouhadana's glistening, bite-size, Yasuda-style sushi; the impeccably fresh sashimi platter of maguro and pearly shrimp, served with the head intact, that accompanies it; or the midpriced $70 omakase option, which comes out to roughly $3 per bite.


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My friend just purchased a 1300. My 200W will allow me to set a specific location in another state, etc. Does the 1300 have a set location feature? If so where would it be found on the unit.
I have a 1250 but it should be the same procedure.
As first you have to turn GPS simulator on. Go Tools/Settings/System/GPS Simulator/check On/OK. After this go Where To?/Address/Change State/Enter the address. When you are done, you will have option to set this new address as your location.
My 200w with the simulator on allows me to just touch the map screen where I want to be and press SET LOC and my on screen vehicle shows up there. I like using this feature to locate Hotels, Restaurants, etc. in any town of interest.


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US 20010002273 A1 Abstract An integrated circuit is formed containing a metal-oxide ferroelectric thin film. An inert-gas recovery anneal is conducted to reverse the degradation of ferroelectric properties caused by hydrogen. The inert-gas recovery anneal is conducted in an unreactive gas atmosphere at a temperature range from 300° to 1000° C. for a time period from one minute to two hours. Preferably, the metal-oxide thin film comprises layered superlattice material. Preferably, the layered superlattice material comprises strontium bismuth tantalate or strontium bismuth tantalum niobate. If the integrated circuit manufacture includes a forming-gas anneal, then the inert-gas recovery anneal is performed after the forming-gas anneal, preferably at or near the same temperature and for the same time duration as the forming-gas anneal. The inert-gas recovery anneal obviates oxygen-recovery annealing, and it allows continued use of conventional hydrogen-rich plasma processes and forming-gas anneals without the risk of permanent damage to the ferroelectric thin film. The unreactive gas atmosphere can contain a pure unreactive gas or a mixture of unreactive gases. The unreactive gas can be any relatively unreactive gas, such as nitrogen or argon.
Claims(15) 1. A method for fabricating an integrated circuit comprising the steps of:
forming an integrated circuit portion including a thin film of ferroelectric metal oxide material; and conducting an inert-gas recovery anneal by locating said integrated circuit portion in an unreactive-gas atmosphere at a temperature range from 300° to 1000° C. for a time duration of one minute or longer. 2. A method according to
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claim 9 Description [0001] 1. Field of the Invention [0002] The invention relates to a method for fabricating a ferroelectric integrated circuit that reduces or eliminates the degradation of electronic properties resulting from exposure to hydrogen. [0003] 2. Statement of the Problem [0004] Ferroelectric compounds possess favorable characteristics for use in nonvolatile integrated circuit memories. See Miller, U.S. Pat. No. 5,046,043. A ferroelectric device, such as a capacitor, is useful as a nonvolatile memory when it possesses desired electronic characteristics, such as high residual polarization, good coercive field, high fatigue resistance, and low leakage current. Lead-containing ABO3-type ferroelectric oxides such as PZT (lead zirconium titanate) and PLZT (lead lanthanum zirconium titanate) have been studied for practical use in integrated circuits. Layered superlattice material oxides have also been studied for use in integrated circuits. See Watanabe, U.S. Pat. No. 5,434,102. Layered superlattice materials exhibit characteristics in ferroelectric memories that are orders of magnitude superior to those of PZT and PLZT compounds. Integrated circuit devices containing ferroelectric elements are currently being manufactured. Nevertheless, the persistent problem of hydrogen degradation during the manufacturing process hinders the economical production in commercial quantities of ferroelectric memories and other IC devices using either the ABO3-type oxides or the layered superlattice material compounds with the desired electronic characteristics. [0005] A typical ferroelectric memory in an integrated circuit contains a semiconductor substrate and a metal-oxide semiconductor field-effect transistor (MOSFET) in electrical contact with a ferroelectric device, usually a ferroelectric capacitor. A ferroelectric capacitor typically contains a ferroelectric thin film located between a first or bottom electrode and a second or top electrode, the electrodes typically containing platinum. During manufacture of the circuit, the MOSFET is subjected to conditions causing defects in the silicon substrate. For example, the CMOS/MOSFET manufacturing process usually includes high energy steps, such as ion-mill etching and plasma etching. Defects also arise during heat treatment for crystallization of the ferroelectric thin film at relatively high temperatures, often in the range 500°-900° C. As a result, numerous defects are generated in the single crystal structure of the semiconductor silicon substrate, leading to deterioration in the electronic characteristics of the MOSFET. [0006] To restore the silicon properties of the MOSFET/CMOS, the manufacturing process typically includes a forming-gas, or hydrogen, annealing ("FGA") step, in which defects such as dangling bonds are eliminated by utilizing the reducing property of hydrogen. Various techniques have been developed to effect the hydrogen annealing, such as H2-gas heat treatment in ambient conditions. Conventionally, hydrogen treatments are conducted between 350° and 550° C., typically around 400-450° C. for a time period of about 30 minutes. In addition, the CMOS/MOSFET manufacturing process requires other fabrication steps that expose the integrated circuit to hydrogen, often at elevated temperatures, such as hydrogen-rich plasma CVD processes for depositing metals and dielectrics, growth of silicon dioxide from silane or TEOS sources, and etching processes using hydrogen and hydrogen plasma. During processes that involve hydrogen, the hydrogen diffuses through the top electrode and the side of the capacitor to the ferroelectric thin film and reduces the oxides contained in the ferroelectric material. The absorbed hydrogen also metallizes the surface of the ferroelectric thin film by reducing metal oxides. As a result of these effects, the electronic properties of the capacitor are degraded. This problem is acute in ferroelectric memories containing layered superlattice material compounds because these oxide compounds are particularly complex and prone to degradation by hydrogen-reduction. After the forming-gas anneal (FGA), the remanent polarization of the ferroelectrics is very low and no longer suitable for storing information. Also, an increase in leakage currents results. [0007] Several methods have been reported in the art to inhibit or reverse hydrogen degradation of desired electronic properties in ferroelectric oxide materials. Oxygen-annealing at high temperature (800° C.) for about one hour results in virtually complete recovery of the ferroelectric properties degraded by hydrogen treatments. But the high-temperature oxygen-anneal itself may generate defects in silicon crystalline structure, and it may offset somewhat the positive effects of any prior forming-gas anneal on the CMOS characteristics. Special metallization layers and diffusion barrier layers have also been examined to minimize the effects of hydrogen during high-energy process steps and forming-gas annealing steps. The metallization schemes typically involve the use of materials that are prone to oxidation in an oxygen-containing environment at temperatures above 400° C. Aluminum, the primary metallization material, has a low melting point and cannot tolerate temperatures above 450° C. Encapsulation of the ferroelectric material with a hydrogen diffusion barrier layer is not completely effective practically, and it requires complex process schemes including depositing and removing the barrier material. [0008] It is, therefore, desirable to find a method for fabricating ferroelectric integrated circuits that eliminates the degradation of electronic properties resulting from hydrogen-containing processing steps, but which does not add substantial changes to conventional CMOS processing or introduce complicated process schemes, such as encapsulation of ferroelectric material with hydrogen diffusion barriers. [0009] 3. Solution to the Problem [0010] The invention provides a method for fabricating ferroelectric elements in integrated circuits that reverses the detrimental effects of hydrogen in ferroelectric material oxides, avoids addition of complex and expensive processing schemes, and obviates counterproductive oxygen annealing. By eliminating high-temperature O2-recovery annealing and other complicated processing steps, such as encapsulation of the ferroelectric with diffusion barriers, previously considered essential for minimizing hydrogen degradation, the inventive method allows FeRAM manufacturers to continue using conventional hydrogen-rich plasma processes and forming-gas anneals (for surface-state curing) without the risk of permanent damage to the ferroelectric element. [0011] A primary feature of the invention is performing an inert-gas recovery anneal to reverse the effects of hydrogen degradation, thereby restoring desired electronic and ferroelectric properties of the ferroelectric element. The inert-gas recovery anneal is preferably performed after hydrogen-plasma processes, forming-gas anneal steps, and other high-energy steps of integrated circuit formation causing reducing conditions. [0012] Gases used in inert-gas recovery anneals may be any relatively unreactive gases, such as nitrogen and the noble gases, in particular, argon and helium. A pure unreactive gas or a mixture of unreactive gases may be used. Gases typically used for an inert-gas recovery anneal are nitrogen and argon. [0013] Another feature of the invention is that the ferroelectric element comprises metal oxides. The metal-oxide material can be an ABO3-type perovskite compound, such as PZT (lead zirconium titanate) and PLZT (lead lanthanum zirconium titanate). Preferably the metal-oxide is a ferroelectric layered superlattice material, such as strontium bismuth tantalate (SBT) or strontium bismuth tantalum niobate (SBTN). [0014] The inert-gas recovery anneal is typically conducted at a temperature range from 300° to 1000° C. for a time duration of one minute or longer. If the integrated circuit fabrication process includes a forming-gas anneal, the forming-gas anneal is typically conducted at a temperature range from 300° to 1000° C. for a time duration of from one minute to two hours. If the integrated circuit fabrication process includes a forming-gas anneal, preferably the inert-gas recovery anneal is conducted at about the same temperature and time duration at which the forming-gas anneal was performed. Experimental results have shown that if a forming-gas anneal is performed in the temperature range of about from 400° C. to 450° C. for about 30 minutes, then the ferroelectric and electronic properties of the ferroelectric element are practically fully recovered when an inert-gas recovery anneal is conducted in the temperature range of about from 400° C. to 450° C. for about 30 minutes. [0015] Numerous other features, objects and advantages of the invention will become apparent from the following description when read in conjunction with the accompanying drawings. [0016]FIG. 1 is a cross-sectional view of a portion of an integrated circuit as may be fabricated by the method of the invention showing a nonvolatile ferroelectric memory cell in which the capacitor is offset laterally from the switch; [0017]FIG. 2 is a schematic of a cross-sectional view of a portion of an integrated circuit as may be fabricated by the method of the invention showing a stacked nonvolatile ferroelectric memory cell in which the capacitor is located above the switch; [0018]FIG. 3 is a schematic of a cross-sectional view of a portion of an integrated circuit as may be fabricated by the method of the invention showing a ferroelectric transistor; [0019]FIG. 4 is a flow chart showing the preferred embodiment of a process for fabricating a nonvolatile ferroelectric memory device according to the invention; [0020]FIG. 5 is a top view of an exemplary wafer on which thin film capacitors fabricated in accordance with the invention are shown greatly enlarged; [0021]FIG. 6 is a portion of a cross-section of FIG. 5 taken through the lines 6-6, illustrating a thin film capacitor device fabricated in accordance with the invention; [0022]FIG. 7 is a graph of hysteresis curves measured at 3 volts, in which polarization, μC/cm2, is plotted as a function of electric field, kV/cm, for strontium bismuth tantalate thin-film capacitors before forming-gas anneal, after forming-gas anneal at 430° C. for 30 minutes, and after N2-gas recovery anneal at 430° C. for 30 minutes; [0023]FIG. 8 is a graph of leakage current, A/cm2 versus applied voltage in volts in strontium bismuth tantalate capacitors before forming-gas anneal, after forming-gas anneal at 430° C. for 30 minutes, and after N2-gas recovery anneal at 430° C. for 30 minutes; [0024]FIG. 9 is a graph in which the log10 of drain current, Idrain, in amps of test transistors is plotted as a function of Vgate in volts for three different bulk voltages, Vbulk, measured after a forming-gas anneal (FGA) and then after a subsequent N2-gas recovery anneal; [0025]FIG. 10 is a graph in which the drain current, Idrain, in amps of test transistors is plotted as a function of Vgate in volts for three different bulk voltages, Vbulk, measured after a forming-gas anneal (FGA) and after a subsequent N2-gas recovery anneal. [0026] 1. Overview [0027] It should be understood that the FIGS. 1-3, 5-6 depicting ferroelectric integrated circuit devices are not meant to be actual plan or cross-sectional views of any particular portion of an actual integrated circuit device. In the actual devices, the layers will not be as regular and their thicknesses may have different proportions. The various layers in actual devices often are curved and possess overlapping edges. The figures instead show idealized representations which are employed to depict more clearly and fully the method of the invention than would otherwise be possible. Also, the figures represent only one of innumerable variations of ferroelectric devices that could be fabricated using the method of the invention. FIG. 1 depicts a ferroelectric memory containing a switch in the form of a field effect transistor in electrical connection with a ferroelectric capacitor. FIG. 2 depicts a ferroelectric memory containing a stacked ferroelectric capacitor connected via a plug to the switch element below. But it is also contemplated to use the method of this invention to fabricate a ferroelectric FET memory in which the ferroelectric element is incorporated in the switch element, as depicted in FIG. 3. Such a ferroelectric FET is described in McMillan, U.S. Pat. No. 5,523,964, which is incorporated herein by reference. Likewise, other integrated circuits fabricated using the method of the invention could include other elements and compositions of material. [0028] Directing attention to FIG. 1, there is shown a cross-sectional view of an exemplary nonvolatile ferroelectric memory cell that could be fabricated according to the method of the invention. The general manufacturing steps for fabricating integrated circuits containing MOSFETs and ferroelectric capacitor elements is described in Yoshimori, U.S. Pat. No. 5,561,307, which is hereby incorporated by reference as if completely contained herein. General fabrication methods have been described in other references also. Therefore, the elements of the circuit of FIG. 1 will be simply identified here. [0029] In FIG. 1, a field oxide region 104 is formed on a surface of a silicon substrate 102. A source region 106 and a drain region 108 are formed separately from each other within silicon substrate 102. A gate insulating layer 112 is formed on the silicon substrate 102 between the source and drain regions 106 and 108. Further, a gate electrode 110 is formed on the gate insulating layer 112. The source region 106, drain region 108, gate insulating layer 112 and gate electrode 110 together form a MOSFET 113. [0030] An interlayer dielectric layer (ILD) 114 made of BPSG (boron-doped phosphosilicate glass) is formed on substrate 102 and field oxide region 104. An adhesive layer 116 is formed on a portion of ILD 114, and then a ferroelectric thin film capacitor 118 is formed on adhesive layer 116. The adhesive layer 116 is made of, for example, titanium, and typically has a thickness of 200 Å. [0031] Ferroelectric capacitor 118 is preferably formed on a conventional wafer 140 that may comprise silicon, gallium arsenide or other semiconductor, or an insulator, such as silicon dioxide, glass or magnesium oxide (MgO). The bottom and top electrodes of ferroelectric capacitors conventionally contain platinum. It is preferable that the bottom electrode contains a non-oxidized precious metal such as platinum, palladium, silver, and gold. In addition to the precious metal, metal such as aluminum, aluminum alloy, aluminum silicon, aluminum nickel, nickel alloy, copper alloy, and aluminum copper may be used for electrodes of a ferroelectric memory. Adhesive layers, such as titanium, enhance the adhesion of the electrodes to adjacent underlying or overlying layers of the circuits. [0032] In FIG. 1, the ferroelectric capacitor 118 comprises a bottom electrode 120 made of platinum and having a thickness of 2000 Å (angstroms), a ferroelectric thin film 122 formed on the bottom electrode 120, and a top electrode 124 formed on the ferroelectric film 122, made of platinum and having a thickness of 2000 Å. The composition and structure of the ferroelectric thin film 122 is discussed in more detail below. [0033] A second interlayer dielectric layer (ILD) 128 made of NSG (nondoped silicate glass) is formed on ILD 114. A PSG (phospho-silicate glass) film or a BPSG film could also be used in ILD 128. Openings 114A are selectively opened through ILD 114 and ILD 128 to expose the source region 106 and gate region 108. Source electrode wiring 130 and drain electrode wiring 132 are formed to fill openings 114A. Other openings 128A are selectively opened through ILD 128 to expose top electrode 124 and bottom electrode 120. Top electrode wiring 134 and bottom electrode wiring 136 are formed to fill these openings 128 a. The drain electrode wiring 132 is electrically connected to top electrode wiring 134. Each of these wirings 130, 132, 134 and 136 is made of Al—Si with a thickness of about 3000 Å. [0034] In FIG. 2, there is shown a cross-sectional view of an alternative embodiment of an exemplary nonvolatile ferroelectric memory cell that could be fabricated according to the method of the invention. The memory of FIG. 2 is a stacked nonvolatile ferroelectric memory cell in which the capacitor is located above the switch. FIG. 2 depicts field oxide regions 204, source region 206, drain regions 208 and gate region 210. The source region 206 is connected by wiring via 230 to metallized circuit connection layer 231. Drain regions 208 are connected by wiring via 236 to bottom electrodes 220 through ILD 214. Ferroelectric thin films 224 are located on bottom electrodes 220, and top electrodes 224 are on thin films 222. After patterning, layers 220, 222 and 224 form capacitors 218, which are covered by ILD 228. [0035] In FIG. 3, there is shown a cross-sectional view of an exemplary nonvolatile ferroelectric transistor that could be fabricated according to the method of the invention. Source region 306 and drain region 308 are located in silicon semiconductor substrate 302. Ferroelectric thin film 322 is located on substrate 302, a portion 321 of thin film 322 being in contact with source region 306, and a portion 323 of thin film 322 being in contact with drain region 308. Top electrode layer 324 is in electrical contact with the rest of the integrated circuit. [0036] The composition of the ferroelectric thin films 122, 222, 322 can be selected from a group of suitable ferroelectric materials, including but not limited to: an ABO3-type perovskite, such as a titanate (e.g., BaTiO3, SrTiO3, PbTiO3 (PT), (PbLa)(ZrTi)O3 (PLZT), Pb(ZrTi)O3 (PZT)) or a niobate (e.g., KNbO3), and, preferably, a layered superlattice material. [0037] U.S. Pat. No. 5,519,234 issued May 21, 1996, incorporated herein by reference, discloses that layered superlattice compounds, such as strontium bismuth tantalate (SBT), have excellent properties in ferroelectric applications as compared to the best prior materials and have high dielectric constants and low leakage currents. U.S. Pat. Nos. 5,434,102 issued Jul. 18, 1995 and 5,468,684 issued Nov. 21, 1995, incorporated herein by reference, describe processes for integrating these materials into practical integrated circuits. Ferroelectric layered superlattice materials, like the metal oxides SrBi2Ta2O9 (SBT) and SrBi2(Ta1−xNbx)2O9 (SBTN), where 0≦x≦1, are currently under development for use as capacitor dielectric in nonvolatile memory applications (FeRAM). [0038] The layered superlattice materials may be summarized generally under the formula:
[0039] where A1, A2 . . . Aj represent A-site elements in the perovskite-like structure, which may be elements such as strontium, calcium, barium, bismuth, lead, and others; S1, S2 . . . Sk represent superlattice generator elements, which usually is bismuth, but can also be materials such as yttrium, scandium, lanthanum, antimony, chromium, thallium, and other elements with a valence of +3; B1, B2 . . . Bl represent B-site elements in the perovskite-like structure, which may be elements such as titanium, tantalum, hafnium, tungsten, niobium, zirconium, and other elements; and Q represents an anion, which generally is oxygen but may also be other elements, such as fluorine, chlorine and hybrids of these elements, such as the oxyfluorides, the oxychlorides, etc. The superscripts in formula (1) indicate the valences of the respective elements, and the subscripts indicate the number of moles of the material in a mole of the compound, or in terms of the unit cell, the number of atoms of the element, on the average, in the unit cell. The subscripts can be integer or fractional. That is, formula (1) includes the cases where the unit cell may vary throughout the material, e.g. in SrBi2(Ta0.75N0.25)2O9, on the average, 75% of the B-sites are occupied by a tantalum atom and 25% of the B-sites are occupied by a niobium atom. If there is only one A-site element in the compound, then it is represented by the "A1" element and w2 . . . wj all equal zero. If there is only one B-site element in the compound, then it is represented by the "B1" element, and y2 . . . yl all equal zero, and similarly for the superlattice generator elements. The usual case is that there is one A-site element, one superlattice generator element, and one or two B-site elements, although formula (1) is written in the more general form since the invention is intended to include the cases where either of the sites and the superlattice generator can have multiple elements. The value of z is found from the equation:
[0040] Formula (1) includes all three of the Smolenskii type compounds discussed in U.S. Pat. No. 5,519,234 issued May 21, 1996, which is hereby incorporated by reference as though fully incorporated herein. The layered superlattice materials do not include every material that can be fit into the formula (1), but only those which spontaneously form themselves into crystalline structures with distinct alternating layers. [0041] The word "compound" used precisely refers to a homogeneous substance in which the identical molecules all comprise the same chemical elements and structure. The term "material" may comprise molecules of different composition. For example, the layered superlattice material strontium bismuth tantalum niobate comprises interconnected crystal lattices in which two different kinds of atoms, tantalum and niobium, occupy variously the B-site positions of the crystal structure. Nevertheless, the terms "layered superlattice material", "layered superlattice compound", and "layered superlattice material compound" are used virtually interchangeably in this specification and their meaning is clear from the context. [0042] The word "substrate" can mean the underlying wafer 102 on which the integrated circuit is formed, as well as any object on which a thin film layer is deposited, such as BPSG layer 114. In this disclosure, "substrate" shall mean the object to which the layer of interest is applied; for example, when we are talking about a bottom electrode, such as 120, the substrate includes the layers 116 and 114 on which the electrode 120 is formed. [0043] The term "thin film" is used herein as it is used in the integrated circuit art. Generally, it means a film of less than a micron in thickness. The thin films disclosed herein are in all instances less than 0.5 microns in thickness. Preferably, the ferroelectric thin films 122 are 200 Å to 3000 Å thick, and most preferably 1200 Å to 2500 Å thick. These thin films of the integrated circuit art should not be confused with the layered capacitors of the macroscopic capacitor art which are formed by a wholly different process which is incompatible with the integrated circuit art. [0044] The term "stoichiometric" herein may be applied to both a solid film of a material, such as a layered superlattice material, or to the precursor for forming a material. When it is applied to a solid thin film, it refers to a formula which shows the actual relative amounts of each element in a final solid thin film. When applied to a precursor, it indicates the molar proportion of metals in the precursor. A "balanced" stoichiometric formula is one in which there is just enough of each element to form a complete crystal structure of the material with all sites of the crystal lattice occupied, though in actual practice there always will be some defects in the crystal at room temperature. For example, both SrBi2(TaNb)O9 and SrBi2(Ta1.44Nb0.56)O9 are balanced stoichiometric formulas. In contrast, a precursor for strontium bismuth tantalum niobate in which the molar proportions of strontium, bismuth, tantalum, and niobium are 1, 2.18, 1.44, and 0.56, respectively, is represented herein by the unbalanced "stoichiometric" formula SrBi2.18(Ta1.44Nb0.56)O9, since it contains excess bismuth beyond what is needed to form a complete crystalline material. In this disclosure, an "excess" amount of a metallic element means an amount greater than required to bond with the other metals present to make the desired material, with all atomic sites occupied and no amount of any metal left over. However, as known in the art, because bismuth oxide is highly volatile and significant heat is used in fabricating electronic devices according to the invention, the molar proportion of bismuth in a solid ferroelectric layer 122, 422, made according to the process of the invention will generally be less than that in the stoichiometric formula for the precursor. However, the molar proportions of strontium, tantalum, and niobium in ferroelectric layer 122, 422, made according to the process of the invention will be very close or identical to the molar proportions given in the stoichiometric formula for the precursor. See U.S. Pat. No. 5,434,102 issued to Watanabe, et al. [0045] It is also known in the art that a layered superlattice material made from a precursor with an amount of superlattice generator element or B-site element in excess of the stoichiometrically balanced amount is more resistant to degradation by hydrogen than material made from a precursor containing amounts of metal corresponding to a balanced stoichiometric formula. For example, amounts in the precursor of at least one metal, such as bismuth and niobium, above or in addition to that present in a balanced formula, inhibit hydrogen degradation. [0046] The diagram of FIG. 4 is a flow sheet of the fabrication steps of the process 410 including the method of this invention to make a ferroelectric memory. In step 412, a semiconductor substrate is provided on which a switch is formed in step 414. The switch is typically a MOSFET. In step 416, an insulating layer is formed to separate the switching element from the ferroelectric element to be formed. In step 418, a bottom electrode is formed. Preferably, the electrode is made of platinum and is sputter-deposited to form a layer with a thickness of about 2000 Å. In the preferred method, an adhesion layer made of titanium or titanium nitride of about 200 Å would be formed in this step prior to depositing the electrode. The ferroelectric thin film is applied to the bottom electrode in step 422. In the preferred method, the ferroelectric thin film contains layered superlattice material. An MOCVD method is the most preferred method to form the thin film. The ferroelectric thin films also can be applied using a liquid deposition technique, such as a spin-coating or a misted deposition method as described in U.S. Pat. No.5,456,945. In step 420, chemical precursors of the layered superlattice material that will form the desired ferroelectric thin film are prepared. Usually, precursor solutions are prepared from commercially available solutions containing the chemical precursor compounds. A preferred embodiment utilizes a precursor solution containing relative molar proportions of the elements strontium, bismuth, and tantalum corresponding approximately to the formula SrBi2Ta2O9. An alternative preferred embodiment utilizes a precursor solution containing relative molar proportions of the elements strontium, bismuth, tantalum and niobium corresponding approximately to the formula SrBi2(Ta1−xNbx)2O9, where x is about 0.5. Preferably, the concentrations of the various precursors supplied in the commercial solutions are adjusted in step 420 to accommodate particular manufacturing or operating conditions. For example, the stoichiometric amounts of the various elements in a commercial solution for a layered superlattice thin film might be SrBi2.18(Ta1.44Nb0.56)O9. It might be desirable, however, to add extra niobium or bismuth to this solution to generate extra oxides that will protect the ferroelectric compounds from hydrogen-annealing degradation. The application step 422 is preferably followed by a treatment step 424, which preferably includes a drying step in case of liquid deposition, a crystallization substep at elevated temperatures such as a rapid thermal process (RTP), and may include treatment with ultraviolet radiation during or after the application step 422. For example, in a typical spin-on procedure, a coat of the precursor might be applied and dried. Then another precursor coat might be applied and dried. The application and treatment steps 422 and 424 can be repeated several times. The treated film is then annealed in oxygen to form the resulting ferroelectric thin film in step 426. Following steps 422-426, the top electrode is formed in step 428. Step 428 and other steps typically include high-energy material deposition and patterning substeps, such as target sputtering, ion milling or RIE-etching, and ashing. [0047] The circuit is generally completed in step 430, which can include a number of substeps; for example, deposition of an ILD, patterning and milling, and deposition of wiring layers. [0048] In step 432, hydrogen annealing of the workpiece is conducted at a temperature and annealing time chosen to satisfactorily eliminate the defects caused in the silicon substrate by oxygen heat treatment and other high-energy processing steps. The hydrogen annealing step is preferably performed with a forming-gas anneal (FGA) using an H2-gas mixture (e.g., 1-5% H2 in N2) under ambient conditions because this is less complex than other alternatives. Preferably, the forming-gas anneal is performed at a temperature in the range 400-450° C. for about 30 minutes. [0049] In step 434, the inert-gas recovery anneal of the invention is conducted to restore the electronic properties of the ferroelectric element that were degraded as a result of hydrogen annealing and other process steps causing hydrogenating or reducing conditions. Inert-gas recovery annealing performed at a temperature range of from 300° to 1000° C. for a time period from one minute to two hours effectively reverses the degradation of electronic properties caused by hydrogen reduction in the ferroelectric element. The beneficial effects of the inert-gas recovery anneal generally increase as the inert-gas anneal temperature increases and the annealing duration increases. Preferably, the inert-gas recovery anneal of the integrated circuit is conducted under ambient conditions in an unreactive-gas atmosphere at the same temperature or close to the temperature of the forming-gas anneal, and for about the same time duration as the forming-gas anneal. Therefore, in inert-gas annealing step 434 of the preferred embodiment of process 410, the integrated circuit portion is located in an unreactive-gas atmosphere at a temperature in the range 400-450° C. for about 30 minutes. [0050] In the field of integrated circuit fabrication, nitrogen gas is generally considered to be nonreactive or unreactive. The unreactive-gas atmosphere can be pure N2 or other unreactive gas, such as a noble gas (e.g., argon), or it can be a mixture of unreactive gases. [0051] The inert-gas recovery anneal of the present invention is effective in protecting the electronic characteristics of metal-oxide ferroelectric materials, including ABO3-type perovskites and layered superlattice materials. In particular, experiments have shown that the inert-gas recovery anneal treatment is effective in restoring desired ferroelectric properties in layered superlattice compounds made from a precursor solution with a composition corresponding approximately to the general stoichiometric formula SrBi2Ta2O9. [0052]FIG. 5 is a top view of an exemplary wafer on which thin film capacitors 596, 598 and 600 fabricated on substrate 500 in accordance with the invention are shown greatly enlarged. FIG. 6 is a portion of a cross-section of FIG. 5 taken through the lines 6-6, illustrating a thin film capacitor device fabricated in accordance with the invention. A silicon dioxide layer 604 is formed on a silicon crystal substrate 602. A titanium adhesion layer 616 is formed on the silicon dioxide layer 604. Then bottom electrode 620 made of platinum is sputter-deposited on adhesion layer 616. Layer 622 is a ferroelectric thin film, and layer 624 represents the top electrode made of platinum. [0053] The electronic properties of strontium bismuth tantalate capacitors were studied before and after a forming-gas anneal at a temperature of 430° C. for 30 minutes. Then the capacitors were treated with an inert-gas recovery anneal using pure N2-gas at 430° C. for 30 minutes, and the electronic properties were measured again. [0054] The capacitors were fabricated from a strontium bismuth tantalate (SBT) precursor solution commercially available from the Kojundo Chemical Corporation. The solution contained amounts of chemical precursors corresponding to the stoichiometric formula SrBi2Ta2O9. The 0.2 mol/l precursor commercial solution contained: bismuth 2-ethylhexanoate, strontium 2-ethylhexanoate, and tantalum 2-ethylhexanoate. Ferroelectric capacitors containing the layered superlattice compound were formed from the precursor solution in general accordance with the method described in Watanabe, U.S. Pat. No. 5,434,102, which is hereby incorporated by reference as if wholly contained herein. [0055] A series of p-type 100 Si wafer substrates 602 were oxidized to form a layer of silicon dioxide 604. A titanium adhesive layer 616 with a thickness in the range of 100-200 Å was sputtered on the substrate, then a bottom platinum electrode 620 with a thickness in the range of 1000-3000 Å thickness was sputter-deposited on adhesive layer 616. These were annealed 30 minutes in O2 at 650° C., and dehydrated 30 minutes at 180° C. in low vacuum. The 0.2 molar SBT-precursor solution was diluted with n-butyl acetate to 0.12 molar concentration prior to deposition. A spincoat of the 0.12 molar solution of the SBT-precursor was deposited on the bottom electrode 620 at 1800 rpm for 30 seconds. This was dehydrated for one minute at 160° C., increasing to 260° C. for four minutes. The sequence of the spincoat and dehydration steps was repeated. The coating was crystallized using rapid-thermal-annealing (RTA 725° C., 30 sec, 100° C./sec). These steps formed a ferroelectric thin film 622 having a thickness of 1700 Å (170 nm). The wafer and deposited layers were given a first anneal for 60 minutes at 800° C. in O2-gas or N2-gas. Platinum was sputter-deposited to make a top electrode layer 624 with a thickness in the range of 1000-2000 Å thickness. The platinum and strontium bismuth tantalate layers were milled to form the capacitors, and then ashing was performed, followed by a second anneal for 30 minutes at 800° C. in O2-gas or N2-gas. [0056] Before the capacitors were annealed in hydrogen gas, the electronic properties of five capacitors, each with an area of 7854 μm2, were measured. [0057] A forming-gas anneal (FGA) was then performed on the capacitors in a H2—N2 (H2 5%) mixture under ambient conditions, at 430° C. for 30 minutes. [0058] Finally, inert-gas recovery annealing was performed on the capacitor samples that had been subjected to the FGA. The samples were annealed in pure N2-gas at a flow rate of 5 l/m, at a temperature of 430° C. for 30 minutes. The remnant polarization and the coercive field were measured at three volts, and the current density was measured between 0 and 10 volts. [0059]FIG. 7 is a graph of hysteresis curves measured at three volts, in which polarization, μC/cm2, is plotted as a function of electric field, kV/cm, for the strontium bismuth tantalate thin-film capacitors before the forming-gas anneal, after the forming-gas anneal at 430° C. for 30 minutes, and after the N2-gas recovery anneal at 430° C. for 30 minutes. FIG. 8 is a graph of the leakage current, A/cm2, versus applied voltage in volts in the strontium bismuth tantalate capacitors before the forming-gas anneal, after the forming-gas anneal at 430° C. for 30 minutes, and after the N2-gas recovery anneal at 430° C. for 30 minutes. [0060] Based on the measurements depicted in FIG. 7, the samples tested had a remanent polarization, 2Pr, of 19.06 μC/cm2 measured at ±3 volts before the forming-gas anneal. After the forming-gas anneal, the polarization decreased to 10.24 μC/cm2. After the recovery anneal in pure nitrogen, the polarization increased to 18.11 μC/cm2, which is 95% of its initial value. FIG. 8 shows that the leakage current in the test transistors increased by a factor of about five as a result of the forming gas anneal. After the N2-gas recovery anneal, however, the leakage current was equal to or even lower than in the original sample. [0061] The effect of nitrogen recovery annealing after FGA on the electronic characteristics of transistor chips was studied. The drain-current was measured as a function of gate voltage after a forming-gas anneal at 430° C. for 30 minutes. Then a N2-gas recovery anneal was performed at 430° C. for 30 minutes and the same type of current versus voltage measurement was performed. FIG. 9 is a graph in which the log10 of drain current, Idrain, in amps is plotted as a function of Vgate in volts of test transistors for three different bulk voltages, Vbulk, after the forming-gas anneal and after the subsequent N2-gas recovery anneal. FIG. 10 is a graph in which the drain current, Idrain, in amps is plotted as a function of Vgate in volts of test transistors for three different bulk voltages, Vbulk, after the forming-gas anneal and after the subsequent N2-gas recovery anneal. FIGS. 7 and 8 show that no change in the electronic characteristics of the transistor occurred. [0062] Thus, the results of Examples 1 and 2 show that an inert-gas recovery anneal effectively recovers the ferroelectric properties of a ferroelectric metal-oxide thin film, while minimizing the damage to surface states of silicon substrates and CMOS/MOSFET elements. [0063] The method of the invention may be used alone or in combination with other methods, devices and compositions intended to inhibit or reverse the detrimental effects of hydrogen degradation. Even though the invention is intended to obviate the need for such other measures, it can, nevertheless, be used with them; for example, with hydrogen barrier layers. The method of the invention is useful to reverse hydrogen degradation, regardless of how it is caused. Reducing conditions can arise in many circumstances during integrated circuit fabrication; even routine handling of the wafer can result in hydrogen degradation. Thus, the inert-gas recovery anneal is useful even if an integrated circuit has not been subjected to a forming-gas anneal. [0064] There has been described a method for fabricating ferroelectric integrated circuits that permits exposure to hydrogen and still results in ferroelectric devices with good electrical properties. It should be understood that the particular embodiments shown in the drawings and described within this specification are for purposes of example and should not be construed to limit the invention which will be described in the claims below. Further, it is evident that those skilled in the art may now make numerous uses and modifications of the specific embodiments described, without departing from the inventive concepts. For example, now that an inert-gas recovery anneal of the integrated circuit has been identified as an important part of the process for fabricating ferroelectric memory devices, this method can be combined with other processes to provide variations on the method described. It is also evident that the steps recited may, in some instances, be performed in a different order; or equivalent structures and processes may be substituted for the various structures and processes described. Consequently, the invention is to be construed as embracing each and every novel feature and novel combination of features present in and/or possessed by the fabrication processes, electronic devices, and electronic device manufacturing methods described. Referenced by
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Mosaic Flood: Scrappy Flanged Modern Bed Quilt Pattern |
Strip piecing speeds construction of this flood-inspired bed size quilt with dimensional flange details. The Mosaic Flood quilt pattern includes step by step photos for the flange technique.
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Keith Willis
Position: DE-NT
Height: 6-1 Weight: 260 lbs.
Born: July 29, 1959 in Newark, NJ
High School: Malcolm X. Shabazz
College: Northeastern
Weighted Career AV (100-95-...): 44 (1867th overall since 1950)
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Oct 27, 2008, 08:56 PM | |
Reads like a sneaky amendment the unions have placed on the ballot to gain more power in Colorado. Worded to fool the people that just vote 'NO'.
http://www.rockymountainnews.com/new.../18/yes-on-49/ "As you may have guessed, we support Amendment 49 - just as we previously supported various versions of this policy at the local level. It would block state and local government agencies from deducting dues or fees from employee paychecks for unions or other membership groups. Amendment 49 would restore an executive order Gov. Bill Owens issued in 2001 affecting unionized state workers and extend it to local governments. Gov. Bill Ritter repealed the executive order soon after taking office. Deductions required by law (income tax withholding, for example), court orders (child support, garnishments) and company policy (medical premiums, retirement contributions) would still be allowed. So would contributions to the United Way and other charitable groups as part of employer-sponsored fundraising." |
Oct 27, 2008, 09:01 PM | |
Joined Feb 2002
1,893 Posts
Donating to political causes is considered free speech. Donating to a union via payroll deduction is free speech. By preventing such deductions, the amendment seeks to effectively limit free speech. If you believe in free speech, vote no. If you think employers should be able to limit this type of speech, vote yes.
At his page find and read the Bell's ballot guide for more. http://www.thebell.org/ BTW I am a member of the ACLU, and prefer speech be as free as possible. Whatever you decide, good for you to take the time to be informed. |
Oct 27, 2008, 09:02 PM | |
So the commercial with the bank teller dividing up the firefighter's paycheck is complete horse pucky.... I love this time of year
I say if the Colorado Professional Firefighters want their money they should have to raise it like everyone else. Am I correct in assuming that they currently get a lot of their funding from involuntary paycheck deductions? |
Oct 27, 2008, 09:06 PM | |||
http://ballotpedia.org/wiki/index.ph...itiative_(2008) Quote:
Oct 27, 2008, 09:08 PM | ||
What a load of ! How does this limit free speech? Here's a direct link from Gregs post. http://www.thebell.org/PUBS/BallotGu...dment49web.pdf Here's what the last bit for mine says. "The free deduction and collection of dues is a special benefit denied to most other worthy civic organizations. Should Amendment 49 pass, unions and other organizations benefiting from free collections would simply share the same fundraising challenges that other groups successfully confront all the time. And that would hardly be the end of the world. Banks routinely set up automatic withdrawals so that their customers can pay any number of bills or, say, make retirement contributions. Deducting union dues should be a snap. " |
Oct 27, 2008, 09:13 PM | ||
Oct 27, 2008, 09:16 PM | |||
Joined Feb 2002
1,893 Posts
The issue is, right now even those FF and police who are not in the union must pay some dues. The legislative history is long and complex; basically, history has shown that when non-union employees don't have to pay dues ('open shop'), it weakens unions and that fact is often used by empoloyers to weaken or damage the union. The Taft-Hartly Act in 1947 OK'd 'closed shops' (all employees must join the union financially if a majority of employees voted for a union). Taft-Hartley is considered a pro-labor law. Unions feel it levels the playing field vs. the employer. Employers don't like it. Amend. 49 is designed to weaken unions by permitting open shops. I side with the unions on this issue, as do most pro-labor people, and have voted 'no' on 49. Republicans/conservatives/pro-business people often prefer open shops because it weakens unions and a fairness argument can be made, although IMO it is a poor fairness argument. Repubs/Cons./pro-business tend to vote 'yes' on this amendment. YMMV. |
Oct 27, 2008, 09:24 PM | |
I was a member of UFCW for many years, and we did go on strike at one time, which was really hard because I didn't get much money and I had two kids, but I did get some money. Overall I think it helped me and the other workers and I would join that union again if asked... but I think someone should be asked if they want to join it and I don't think joining a union should be a condition of employment, and I don't think there should be any penalty for not joining the union. I can see where this gets complicated though, because even the non-union workers benefit from the union activities.
I did not understand that this 49 thing was about unions. That makes it much more clear. |


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["activity","alpen","alpinism","athletic","austria","autumn","backpack","clear sky","cliff","climber","countryside","hike","hiker","live","man","mount","mountain","nature","outlook","panorama","peak","pinnacle","recover","recreation","rock","rocky","small","sport","summer","summer getaway","switzerland","tour tourism","vacation","view","vorarlberg"]
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UkranianiPhone.com has posted images of what it claims are iPhone 6 renders aimed at helping manufacturers produce accessories for the upcoming device.
The images appear to be better quality versions of the schematics leaked a few weeks ago. They depict the full-metal backplate with inlets at the top and bottom, assumedly related to the antenna structure. The cutouts for these lines match the image from the previous leaks. Interestingly, the renders also give specific measurements saying that the phone is 138mm in height, 67 mm in width, and 6 mm in depth.


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Rural Development - Be Part of the Local Action
For information on the Formation of Local Action Groups for the Rural Development Programme 2014-2020 please click on the specific LEADER 2014 -2020 webpage.
This page contains further information on ways to get involved in the process and access to the Board Nomination Forms.
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For who can not resist chocolat :D
This great custom product in white from our department Men and T-Shirt category can be printed just for you in the size and style you like. The design i love chocolate was created by shirtdesigns and uploaded to Spreadshirt for you to have printed on a T-Shirt. Next to a host of other great customized designs, you can find this i love chocolate design in Spreadshirt's Miscellaneous category. If you are interested in topics like Addiction or Bar, then you'll love i love chocolate designs by shirtdesigns. Spreadshirt also offers a huge selection of custom t-shirts, hoodies and accessories for the category Miscellaneous as well as top Chocolate clothing. shirtdesigns's designs have already impressed many of our customers, so we are sure that we've got right stuff for you! Spreadshirt is your destination for great designs of all kinds – whether it's Addiction, Bar or Chocolate. We are sure that you will find something nice in our shop, there are many amazing custom Miscellaneous t-shirts, hoodies, or accessories for you to find! Tags: Design ID: 11638771
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Packaging Software
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