text:
Latest update includes:
- Slides from Department Security Officer Briefing Posted
- MMARS Chargeback
- ROTH Plan Available Friday, March 7
- Payroll User Group Meeting March 12
- Fringe Benefit, Payroll Tax, Indirect Cost Charges for Accounting Period 8
- MMARS Unavailable Saturday
- Weekly Fraud Awareness and Prevention Fact – Better Business Bureau's Top Scams of 2013
- Register Today for FREE for the 2014 MASSbuys EXPO on Thursday, May 1
- Upcoming Training Sessions and Meetings
- MMARS Hint of the Week - CD Forms Submitted to Treasury
Slides from Department Security Officer Briefing Posted
The slides from the Annual Department Security Officer Briefing have been posted to the Security Officers page of the CTR web portal.
MMARS Chargeback
The fourth FY2014 billing for the Office of the Comptroller's MMARS chargeback to support the operation of the Financial Accounting and Reporting System for the Commonwealth has been entered. Billings are sent bi-monthly. This billing is for actual usage based on transaction lines posted to the general ledger for the months of January and February. The document ID will be: CTRMMARS14CHARJANFEB.
Buyers are required to make payment on undisputed bills within 30 days from receipt of an ITI by completing an ITA (Internal Transaction Agreement).
ROTH Plan Available Friday, March 7
The new post-tax Deferred Compensation Plan or ROTH Plan will be available this Friday, March 7. Departments should continue to use the monthly deferral report to determine all elections.
ROTH plans are set up in the HR/CMS Savings Plan page. Go to Benefits > Enroll In Benefits > Savings Plans. The new Plan Type is "4Y"; new Deduction Code is "DCROTH" Be sure to use "After Tax Investment" section when establishing the Amount or Per Cent. New Resource Documents are available in the HR/CMS Knowledge Center under Payroll > Savings Plans.
Employees eligible for OBRA are not eligible for Deferred Compensation (pre or post tax).
Payroll User Group Meeting March 12
The next Payroll User Group Meeting will meet on Wednesday, March 12, from 9:30 A.M. to 12:30 P.M. in the 21st Floor Conference Room of One Ashburton Place, Boston. Agenda items will include the following:
- Metro Credit Union
- Benefit Strategies
- SmartPlan – Roth
- GIC Open Enrollment
- Payroll Reminders including:
- COMIT Tickets/Timeframes
- W2 and W2C Reprint – Self Service
- W4 Exempt Employees – new process
- Payroll Close/Open Timeline
- Payroll Authorization Form
This meeting will be webcast for those who cannot attend in person. Register for either the meeting or the webcast via the Comptroller's Training and Meeting Schedule.
Fringe Benefit, Payroll Tax, Indirect Cost Charges for Accounting Period 8
The fringe benefit, payroll tax and indirect cost chargebacks for Accounting Period 8 (February), FY2014, will be run this Saturday, March 8. All eligible expenditures processed during Accounting Period 8 will be subject to these assessments.
Departments should ensure that the budget structure tables for appropriated (payroll tax only), federal grants and other non-budgetary accounts are properly established so these charges post without rejecting under object codes D09 (fringe benefits and payroll taxes) and E16 (indirect costs).
MMARS Unavailable Saturday
MMARS and LCM will be unavailable on Saturday, March 8 due to scheduled system processing.
Weekly Fraud Awareness and Prevention Fact – Better Business Bureau's Top Scams of 2013
The Council of Better Business Bureaus, the umbrella organization for the 113 local BBBs across the U.S. and Canada, culls its annual "Top Ten Scams" list from a variety of sources, including reports from consumers, some of whom have been victims of scams; from federal agencies; and from other reliable information sources.
"These are not necessarily the scams with the biggest losses, or those with the most victims, as many people don't report scams or even know they've been victimized," said Katherine Hutt, CBBB spokesperson. "These are the scams that seemed to be the most widespread, aimed at the most vulnerable, growing in popularity, or just plain audacious. Scams are ever-changing, but we want to help people recognize them and be prepared the next time they get a suspicious call, email, text, or solicitation."
See the full list.
If you have any questions regarding this or previous Fraud Awareness and Prevention Facts, please contact the Comptroller Help Desk at 617-973-2468 or via email at firstname.lastname@example.com. To report Fraud, Waste, or Abuse contact one of the Commonwealth's Whistleblower Hotlines.
Register Today for FREE for the 2014 MASSbuys EXPO on Thursday, May 1
Register for the Commonwealth's largest Business to Government (B2G) event, where you learn about products and services from Statewide and Departmental Contract vendors.
If you are a public purchaser or procurement official for your school or school district, don't miss this once-a-year chance to learn how you can save time and money by purchasing through Statewide Contracts.
- Meet more than 350 vendors, who will show you the newest goods and services you can purchase through Statewide and Departmental Contracts.
- At our workshops, learn the latest in strategic sourcing best practices, professional development, and resources to increase cost savings.
- Experience the "COMMBUYS: World of the Future" interactive exhibit. Our new eProcurement system COMMBUYS will have easier ordering through eCatalogs and improved search, filtering, and pricing.
- Public purchasers in eastern MA: concerned about traveling to Worcester? Take a shuttle bus or the commuter rail from Boston or park for free in Worcester, and we'll shuttle you to the DCU Center.
- Using our Government Resource Center, get answers to your purchasing questions: financial, procurement, construction, and more while you're looking at products and services available on Statewide Contracts.
This event will be held on Thursday, May 1 at the DCU Center, Worcester.
Upcoming Training Sessions and Meetings
- Payroll User Group Meeting – Wednesday, March 12, 9:30 A.M. – 12:30 P.M., One Ashburton Place Boston, 21st Floor Conference Room
- Webcast Payroll User Group Meeting – Wednesday, March 12, 9:30 A.M. – 12:30 P.M., Online Meeting
- Webcast Interdepartmental Chargebacks – Friday, March 14, 11:00 A.M. – 12:00 P.M., Online Training
- Intermediate MMARS Warehouse – Wednesday, March 19, 9:00 A.M. – 1:00 P.M., One Ashburton Place Boston, 9th Floor Training Lab
- Fraud Awareness and Prevention – Friday, March 21, 9:00 A.M. – 12:00 P.M., One Ashburton Place Boston, 9th Conference Room B
- Encumbrance Management – Monday, March 24, 9:00 A.M. – 12:00 P.M., One Ashburton Place Boston, 9th Floor Training Lab
- Intro to State Finance MMARS Navigation – Tuesday, March 25, 9:00 A.M. – 12:30 P.M., One Ashburton Place Boston, 9th Floor Training Lab
- Payment Management – Wednesday, March 26, 9:00 A.M. – 12:00 P.M., One Ashburton Place Boston, 9th Floor Training Lab
Register for these sessions via the Comptroller's Training and Meeting Schedule which lists classes scheduled for the next two months and Payroll User Groups through 2014.
MMARS Hint of the Week - CD Forms Submitted to Treasury
When sending CD forms to the State Treasurer, be sure to manually draw federal funds to record deposits. The CD form must contain the following or it will reject:
- Fund
- Sub Fund (derived from the BQ82 level 3 budget screens)
- Department
- Revenue Source
- Unit
- Fiscal Year
- Budget Year
If this is a federal grant draw, the CD must also contain the program code.


text:
US 6563586 B1 Abstract This invention is an apparatus for imaging metrology, which in particular embodiments may be integrated with a processor station such that a metrology station is apart from but coupled to a process station. The metrology station is provided with a first imaging camera with a first field of view containing the measurement region. Alternate embodiments include a second imaging camera with a second field of view. Preferred embodiments comprise a broadband ultraviolet light source, although other embodiments may have a visible or near infrared light source of broad or narrow optical bandwidth. Embodiments including a broad bandwidth source typically include a spectrograph, or an imaging spectrograph. Particular embodiments may include curved, reflective optics or a measurement region wetted by a liquid. In a typical embodiment, the metrology station and the measurement region are configured to have 4 degrees of freedom of movement relative to each other.
Claims(25) 1. An apparatus, comprising:
a metrology unit receiving information from a measurement region of a surface;
a first imaging camera with a first field-of-view with a known spatial relationship to the measurement region, and
a second imaging camera with a second field-of-view larger than the first field of view to aid in positioning of the metrology unit with respect to the measurement region.
2. An apparatus as recited in
3. An apparatus for inspecting a sample comprising:
a light source for generating a measurement beam which is directed to reflect off the surface of the sample;
a detector for monitoring reflected energy from the measurement beam;
a first camera for obtaining a large field of view of the sample to determine the relative orientation and position of the sample with respect to the apparatus; and
a second camera for obtaining a small field of view of the sample to permit the measurement beam to be accurately positioned at a selected measurement site.
4. An apparatus as recited in
5. An apparatus as recited in
6. An apparatus as recited in 5, wherein a separate light source is provided for the large field of view camera.
7. An apparatus as recited in 5, wherein the reflected measurement beam is directed to a pinhole mirror, and wherein the light transmitted through the pinhole mirror is monitored by the detector and the light reflected by the pinhole is imaged by the small field of view camera.
8. An apparatus as recited in
9. An apparatus as recited in
10. An apparatus for inspecting a sample comprising:
a light source for generating a measurement beam;
an optical assembly for focusing the measurement beam to a spot on the surface of the sample such that the beam is reflected therefrom;
a detector for monitoring reflected energy from the measurement beam;
means for translating the sample with respect to the focused measurement beam;
a first camera for obtaining a large field of view of the sample to determine the relative orientation and position of the sample with respect to the apparatus; and
a second camera for obtaining a small field of view of the sample, said small field of view being substantially aligned with measurement beam spot on the sample to permit the measurement beam to be accurately positioned at the selected measurement site using said translating means.
11. An apparatus as recited in
12. An apparatus as recited in
13. An apparatus as recited in
14. An apparatus as recited in
15. An apparatus as recited in 14, wherein a separate light source is provided for the large field of view camera.
16. An apparatus as recited in 14, wherein the reflected measurement beam is directed to a pinhole mirror, and wherein the light transmitted through the pinhole mirror is monitored by the detector and the light reflected by the pinhole is imaged by the small field of view camera.
17. An apparatus as recited in
18. An apparatus as recited in
19. A method of measuring light reflected from a sample with an inspection device, said inspection device having a light source for illuminating the sample with a measurement beam and a detector for detecting light energy reflected from the sample, said method for facilitating the positioning of the measurement beam with respect to the sample comprising the steps of:
capturing a first image of the sample with a first camera over a relatively large field of view;
determining the relative orientation and position of the wafer with respect to the inspection device based on the first image;
moving the sample with respect to the measurement beam so that the measurement beam is near the desired measurement site;
capturing a second image of the sample with a second camera, said second image having a field of view much smaller than the first field a view;
determining the relative orientation and position of the wafer with respect to the inspection device based on the second image;
moving the sample with respect to the measurement beam so that measurement beam is coincident with the measurement site; and
measuring the light reflected from the sample at the measurement site.
20. A method as recited in
21. A method of measuring light reflected from a sample with an inspection device, said inspection device having a light source for illuminating the sample with a measurement beam and a detector for detecting light energy reflected from the sample, said method for facilitating the positioning of the measurement beam with respect to the sample comprising the steps of:
capturing a first image of the sample with a first camera over a relatively large field of view;
determining the relative orientation and position of the sample with respect to the inspection device based on the first image;
moving the sample with respect to a second camera;
capturing a second image of the sample with a second camera, said second image having a field of view much smaller than the first field a view;
determining the relative orientation and position of the sample with respect to the inspection device based on the second image;
moving the sample with respect to the measurement beam so that measurement beam is coincident with a measurement site; and
measuring the light reflected from the sample at the measurement site.
22. A method as recited in
23. A method for fabricating a wafer in a process tool, said method comprising:
altering the state of the wafer within the process station;
transferring the wafer to a metrology device coupled to but spaced from the process station;
capturing a first image of the sample over a relatively large first field of view;
determining the relative orientation and position of the wafer with respect to the first field of view;
capturing a second image of the sample over a second, smaller field of view;
determining the relative orientation and position of a feature with respect to the second field of view;
moving the sample with respect to the second field of view; and
measuring the light reflected from the region of interest.
24. A method as recited in
25. A method as recited in
Description This application claims the benefit of priority to Provisional Application Ser. No. 60/143,199, Jul. 9, 1999, and is a continuation-in-part of Utility application Ser. No. 09/533,613, filed Mar. 22, 2000, which in turn claims priority to Provisional Application Ser. No. 60/118,217, filed Feb. 1, 1999, and U.S. Provisional Application Ser. No. 60/125,462, filed Mar. 22, 1999, and U.S. Utility application Ser. No. 09/495,821, filed Feb. 1, 2000, all of which are incorporated herein in their entirety by reference. 1. Field of the Invention This invention relates to the field of optical metrology in general, and to in-line thin-film reflectometry and profilometry for semiconductor wafers in particular. 2. Description of Related Art A trend towards smaller critical dimension sizes in integrated circuits (IC) drives advances in technology for semiconductor capital equipment. Both technical factors, such as the ratio of the critical dimension size to the wavelengths of light used by fabrication device components, and well known economic factors, such as wafer throughput, Cost-Of-Ownership (COO) and Overall Equipment Effectiveness (OEE) are critical. In IC fabrication, hundreds of process steps are necessary. During some of these steps, successive layers of materials are deposited on a substrate. Subsequently, Chemical Mechanical Polishing (CMP) is often used to make a film layer planar to high degree of precision. After a CMP process step, the thickness of the remaining film may be determined to verify that it is within desired tolerances. Optical methods are commonly used to determine the thickness of thin films since light is generally non-destructive and non-invasive. Measured optical properties of the surface or measured wave-optics effects due to the interaction of light with thin films residing on the wafer yield desired information, such as film thickness. Thus, as critical dimensions on the wafer are reduced, there is a need for advances in optical metrology to obtain required precision and accuracy. Technical requirements of precision and accuracy must be consonant with economic requirements. Fabrication machines must process wafers at a rapid rate with high uniformity and high reliability in addition to high precision. Since the fabrication must take place in a strictly controlled environment, the size of the machine is also an important factor. Easy operation is also important, despite the complexity of the processing and measurements. Performance in terms of these and other economic factors can be expressed through figures-of-merit such as COO and OEE. Wafer metrology art comprises mostly �metrology mainframe� devices, which are devices only partially integrated with an IC fabrication line. There are at least two significant problems associated with partially integrated or non-integrated metrology control. First, waiting for test measurements from metrology mainframe systems to confirm the results from each process step is inherently inefficient. Second, with a partially integrated or non-integrated unit, process engineers face difficulties in achieving and maintaining optimal process parameters once they have the measurement information. These and other problems associated with off-line metrology result in growing need for integrated (in-line) metrology in IC wafer fabrication. With in-line devices, the metrology apparatus is physically placed within the process equipment itself. This enables a substantial reduction in times required to perform metrology measurements and shortens feedback or feedforward times between the metrology system and the process controls. By measuring critical parameters as each wafer is processed, the process equipment has information on the most recently processed wafer without stopping production. This results in good wafer-to-wafer control. Integrated metrology also significantly reduces operating costs by reducing the requirement for expensive test wafers, speeding up process qualifications and maintenance schedules, and provides an overall reduction in scrap wafers. Related art in integrated thin-film metrology is limited regarding combining precise and accurate thin-film thickness measurements while meeting the other requirements of the semiconductor industry. Typically, related art in-line devices are limited to measurements of films of about 80 nm thickness. However, there is a need in the industry to measure film thickness of only a few tens of nanometers. Further, related art in-line devices are limited in their ability to make rapid, successive measurements over the totality of a wafer's surface. What is needed is an imaging metrology system with rapid optical access to the entirety of a wafer surface. From the foregoing, it can be readily appreciated that many processes used in microelectronics manufacturing could benefit from integrated metrology, including but not limited to CMP, plasma etching, chemical vapor deposition, and lithography. This invention is an apparatus for imaging metrology. One object is to integrate an imaging metrology station with a processor station such that the metrology station is apart from but coupled to the process station. In one embodiment, a metrology device is provided with a first imaging camera with a first field of view containing the measurement region. Alternate embodiments include a second imaging camera with a second field of view. Preferred embodiments comprise a broadband ultraviolet light source, although other embodiments may have a visible or near infrared light source of broad or narrow optical bandwidth. Embodiments including a broad bandwidth source typically include a spectrograph, or an imaging spectrograph. Particular embodiments may include curved, reflective optics or a measurement region wetted by a liquid. In a typical embodiment, the metrology station and the measurement region are configured to have 4 degrees of freedom of movement relative to each other. FIG. 1 shows a hardware overview for one embodiment of the wafer metrology device. FIG. 2a illustrates one chuck-positioning embodiment with the chuck in a lowered position. FIG. 2b illustrates one chuck-positioning embodiment with the chuck in a raised position. FIG. 2c illustrates an alternate chuck-positioning embodiment. FIG. 2d illustrates a second alternate chuck-positioning embodiment. FIG. 3a illustrates a prior art wafer-gripping device. FIG. 3b illustrates a wafer chuck. FIG. 3c illustrates an embodiment of a reduced surface area wafer chuck in cross-section. FIG. 3d illustrates an embodiment of a reduced surface area wafer chuck in perspective. FIG. 4a shows an exemplary reference reflector embodiment. FIG. 4b shows an exemplary embodiment of the wafer aligner. FIG. 5 illustrates calibration of the wafer aligner. FIG. 6 illustrates improved accuracy of wafer alignment. FIG. 7 illustrates the use of a large Field-Of-View (LFOV) camera and a small Field-Of-View (SFOV) camera to avoid groping in the process of locating a particular region of a wafer. FIG. 8 illustrates the advantage of using of the LFOV camera to enable easy die size determination during training. FIG. 9 illustrates one embodiment of a bubble-diversion element in a top-view. FIG. 10 illustrates one embodiment of a bubble-diversion element in a perspective-view. FIG. 11 illustrates one embodiment of a bubble-diversion element in cross-section. FIG. 12 shows one embodiment of an illumination system. FIG. 13 shows an alternate embodiment of an illumination system. FIG. 14 shows a second alternate embodiment of an illumination system. FIG. 15 shows an embodiment of lamp-fiber coupling. FIG. 16 illustrates an illumination embodiment with fiber to fiber coupling. FIG. 17 shows a preferred embodiment for illumination of a LFOV camera. FIG. 18 illustrates one embodiment of an integrated metrology apparatus. FIG. 1 illustrates one embodiment of an imaging metrology device. In FIG. 1, reflectometer assembly 100, vacuum chuck 101, vacuum chuck symmetry axis 102, light source fiber 103, first beam splitter 104, second beam splitter 105, semiconductor wafer 110, measurement region 111, window 120, collimator 130, relay optics 135, first imaging optical assembly 137, second imaging optical assembly 138, third imaging optical assembly 139, spectrographs (including calibration filters) 140 and 141, spectrograph fiber optic 145, pinhole mirrors 146, large field-of-view camera 150, small field-of-view camera 160, auto-focussing objective lens assembly 190, first optics breadboard 195, and second optics breadboard 197 are shown. The embodiment shown in FIG. 1 may be integrated as a subsystem into a process device (not shown) or in other embodiments may be a stand-alone mainframe. Other embodiments may include other diagnostic assemblies without departing from the invention, as described below. In FIG. 1, semiconductor wafer 110 is coupled to vacuum chuck 101, whose center-of-mass is fixed relative to the laboratory and the semiconductor wafer coupled to it. However, rotation of the vacuum chuck about the vacuum chuck symmetry axis 102 is allowed. Reflectometer assembly 100 comprises window 120 and first and second optics breadboards 195 and 197, respectively. First optics breadboard 195 is free to translate along the y axis, and may be driven by a direct-drive actuator in a particular embodiment. Second optics breadboard 197 is coupled to the first optics breadboard, however, the second optics breadboard is free to translate relative to the first optics breadboard along the x axis. Objective lens assembly 190 is attached to the second optics breadboard, however, it is free to translate along the z axis as controlled by an auto-focus system known to the art. Thus, the embodiment shown in FIG. 1 has four degrees of freedom of movement: translation along the (x, y, z) axes; and rotation of the vacuum chuck about the vacuum chuck symmetry axis. This allows rapid optical access to the entirety of the wafer surface. In the embodiment shown in FIG. 1, all optical elements except those on second optics breadboard 197 are coupled to and fixed relative to first optics breadboard 195. Objective lens assembly 190, are coupled to second optics breadboard 197. Thus, the objective lens assembly is free to translate along the x axis. In addition, the objective lens assembly may be focussed on semiconductor wafer 110 by translation along the z axis. Note that translations of the first and second optics breadboards along the x axis and y axis allow access to the full wafer surface. Rotation of the wafer coupled to the vacuum chuck may be used in combination with translations of the first and second optics breadboards along the x and y axes to allow more rapid measurement access over the entire surface of the semiconductor wafer or to eliminate obstructions. Complete coverage of a 200 mm diameter wafer is possible with straightforward scaling to 300 mm and larger diameter wafers. In FIG. 1, vacuum chuck 101 not only holds wafer 110 but also flattens it. This enables more accurate auto-focus, and reduces measurement errors and uncertainties due to wafer tilt and associated variations in optical path length. FIG. 2a and FIG. 2b illustrate chuck and wafer placement for an embodiment. A lowered position is shown in FIG. 2a. The chuck raises to allow wafers to be loaded and unloaded, as shown in FIG. 2b. In FIG. 2a, chuck assembly 200, in its lowered position, rests on the main unit through three kinematic mounts, each of which consist of a ball block 201 and a support block 202. The ball blocks are rigidly attached to the chuck assembly 200, and the support blocks are rigidly attached to the main unit 204. In an embodiment, the ball blocks are threaded into the chuck assembly to allow for height adjustment and leveling of the chuck assembly to the main unit, and there is facility to lock the adjustment in place. Other adjustment schemes are possible. The purpose of the kinematic mounts is to yield a repeatable resting position of the chuck every time it is lowered. FIG. 2c shows an alternate embodiment. This embodiment includes supports that are three vee-blocks 210, which is a global top view with three local cross sectional views. The vees have their axes aligned to cross substantially at a single center point 211. In the absence of friction and wear, this arrangement yields only one stable lowered position, with each ball block 212 seated in its appropriate vee block, as shown in cross section 213. Since there is only one stable position, it is repeatable. FIG. 2d shows another alternate embodiment. In this embodiment, there are three different support blocks: a flat 220, a cone 221 and a vee 222. Both of these arrangements are tolerant of imprecise mounting locations of the support blocks on the main unit and the ball blocks on the chuck assembly. As a counter-example, if two or three cone blocks are used, the distances between the support blocks on the main unit and the distances between the ball blocks on the chuck assembly must be identical to avoid ambiguity of which ball should be firmly seated in its cone. The kinematic mounts of the above-described embodiments rely on low friction between ball blocks and support blocks, and low wear of all blocks in order to provide repeatable positioning. Friction could prevent a ball from settling to the bottom of a vee or cone, and thus yield positioning uncertainty. Wear of any of the blocks would impact the settled position of the chuck assembly. A preferred material for the supports is Zirconia ceramic, due to its extreme hardness and excellent friction and wear properties. Other hard metallic and ceramic materials are also possible in alternate embodiments. Fluid lubrication is also possible in further embodiments. In the prior art, as shown in FIG. 3a, a vacuum wand 300 holds the wafer 301, with a vacuum applied to the channel in the center of the wand. In contrast, FIG. 3b shows an embodiment of the present invention. In FIG. 3b, vacuum chuck 302 holds the wafer 301 flat during measurement. In operation, the wafer may be mechanically placed in contact with the chuck while vacuum is applied to the pneumatic channel 303. The wafer seals the channel, and the resulting vacuum holds the wafer. The wafer is de-chucked by applying pressure to the channel instead of vacuum. In an embodiment of the present invention, a large, flat chuck contacts the wafer over a large area, shown in FIG. 3b. The large area may be desired to maintain flatness of the wafer. A potential disadvantage of this approach may be that surface tension of water at the wafer/chuck interface may prevent the wafer from de-chucking, even when there is pressure applied to the vacuum-pressure channel. The pressurized air may form channels in the water that is holding the wafer to the chuck, and escape, without the wafer dropping. FIG. 3c shows a preferred embodiment of a reduced surface area chuck. The overall extent of the chuck may be the same as in FIG. 3b, but the area-reduction channels 320 reduce the contact area. The vacuum is applied to the wafer on pedestals between these channels, which hold the wafer flat over a large proportion of its area. The reduction in actual contact area reduces the force of water holding the wafer to the chuck, so that pressure applied to the vacuum-pressure channel will de-chuck the wafer. The reduced area chuck relies on the stiffness of the wafer to maintain local flatness, and contacts distributed over a large area to maintain global flatness. FIG. 3d shows a view of the bottom face of a reduced surface area chuck. In preferred embodiments, a vacuum/pressure sensor senses the pressure in the pneumatic channel 303 (see FIG. 3c). The chuck uses vacuum and pressurized air to chuck and release the wafer. Whether or not the wafer is chucked or released at a given time is important information for maintaining the safety of the wafer(s) and the proper operation of the instrument. If the wafer is not in the state that is intended, the measurements may be corrupted, pattern recognition may fail, or robot conflicts may occur. Vacuum and pressure sensing in the chuck's pneumatic channels gives useful information to the controlling computer about the state of the wafer. In the following description, pressure is measured relative to atmospheric, with negative pressure signifying vacuum. During chucking the pressure in the pneumatic channel 303(see FIG. 3c) should be, x1<p<x2, where x1 and x2 are both negative values. If p is outside of the range, a system fault results. If x1>p, there is more vacuum than expected. This could result if the vacuum/pressure channel is blocked before vacuum reaches the wafer. This threshold will only exist if there is some leakage of vacuum at the chuck/wafer interface in normal operation. Introducing a vacuum leak near the wafer could insure this. If p>x2, there is not enough vacuum, indicating either a fault in the vacuum source, or that the wafer is not in sufficient proximity to the chuck to seal the vacuum. During de-chucking, the pressure in the pneumatic channel 303 (see FIG. 3c) should be, x3<p<x4, where x3 and x4 are both positive values. If x3>p, there is a fault in the pressure supply. If p>x4, there is too much pressure, indicating either that the pressure vacuum pressure line is blocked, or the wafer 301 is not de-chucked. When a wafer is measured while immersed, it is preferable to circulate water to avoid the build up of contaminants in the water, and to replenish water that is lost by evaporation, splashing, and wetting of wafers. FIG. 9 shows a cut away top view of a section of the water tank with wall 400 and floor 401 which has a lip 402 to support the window 403. Water is introduced at inlet 404, which is preferably lower than the minimum normal water level to reduce the possibility of creating bubbles. The incoming water 405 can carry with it bubbles that might adhere to either the window 403 or wafer (not shown) and impede the intended measurement of the apparatus. Bubble deflector 406 is desired to reduce the incidence of bubbles in the measurement region. It extends from the floor of the tank to a level above that of the water inlet and the water in the tank, as indicated in the three dimensional view of FIG. 10. Bubble deflectors in alternate embodiments may rely on increased residence times or vortical fluid motions. It is also preferred to periodically clean the window. Slurry particles are the most likely source of contamination in the present context, although air-borne contaminants are also possible. Draining the water above the window facilitates cleaning. A preferred embodiment of a drain for this purpose is shown in the cut-away view of FIG. 11. The tank wall 400 and the window 403 contain water 410. An O-ring in grove 411 seals the window to the wall. Drain channel 412 has inlet 413 and outlet 414 where a fitting is attached. One or more such drains are preferably deployed around the perimeter of the window. These can be either interconnected and then connected to a vacuum source through a valve, or directly connected through valves to a vacuum source. The valve(s) is closed during normal operation of the system, and opened, to drain the tank. Typically, a water trap(s) will be placed in the line to capture the water and not pass it on to the actual vacuum source. In some cases, the very act of draining the tank will serve to remove contaminants. Referring now to the embodiment of FIG. 1 and in alternate embodiments, optics breadboards 195, 197 may be positioned with a direct drive motor/lead screw. In a preferred embodiment, components of a motor are mounted directly on a lead screw shaft according to well-understood mechanical techniques. With a direct drive motor/lead screw, coupling elements are eliminated resulting in a more compact drive mechanism with high stiffness in torsion that enables precision positioning of the breadboards relative to wafer 110. The wavelength range for illumination and collection may be in the ultraviolet (UV) or the visible or the near infrared (NIR) in different embodiments. In the particular embodiment in FIG. 1, reflectometer assembly 100 comprises a broadband reflectometer measurement system. Other embodiments may be narrowband or may comprise instruments other than a reflectometer. In FIG. 1, an illuminating light source (not shown) may be a UV Xenon lamp, fiber-coupled to the system shown in FIG. 1 via source fiber 103. Alternate embodiments have a tungsten lamp or a deuterium lamp or a xenon lamp. Relay optics 135 transfer collimated light from lens assembly 130 to beam splitter 104. The light transmitted directly through the beam splitter from the source fiber is referred to as the monitor beam. The monitor beam does not interact with measurement region 111. The portion of the illumination that the beam splitter directs toward the wafer is referred to as the measurement beam. The measurement beam reflects from the surface of the wafer, where its spectrum is modified by the presence of thin films on the wafer. Following reflection from the wafer, the measurement beam returns to the beam splitter, and passes to several relay mirrors 135. First imaging optical assembly 137 focuses the measurement beam onto pinhole mirror 146. The light falling on a pin hole aperture in the pin-hole mirror passes into spectrograph fiber 145, which conveys it to spectrograph 140. The resulting spectrum is a primary source of information about the films on the wafer. Other embodiments may image a portion of the wafer surface onto a spectrograph slit, thereby collecting data along a line on the wafer surface rather than a point. Referring again to FIG. 1, the monitor beam follows a similar but distinct path through another pinhole mirror 146 and spectrograph fiber 145 to spectrograph 141. The measured monitor spectrum is indicative of the illumination and optical components, and may be used to correct the measurement of film properties for instrument characteristics. As described above, the relative spectral content of both the incident and reflected light from semiconductor wafer 110 is measured. The thickness of thin-films deposited on the measurement region 110 can then be determined from the reflected measurement beam and incident monitor beam light by principles well known in the art. Many data reduction methods are applicable. The embodiment illustrated in FIG. 1 has several advantages. First, as described above, an entire wafer surface can be quickly accessed. In addition, scanning with relay mirrors is employed in only one spatial dimension. If the light beams reflected from the relay mirrors were perfectly collimated and aligned, scanning would have no deleterious effects on the performance of the system. However, the beams cannot be perfectly collimated and perfect alignment is unattainable in practice. Therefore, it would be preferable to scan the objective with respect to the rest of the optics as little as possible. In the embodiment shown in FIG. 1, the majority of the optics scan in one dimension on the first optics breadboard, and the rest of the optics scan in two dimensions with respect to a laboratory-fixed coordinate system, but only one dimension (X) with respect to the first optics breadboard. Thus, the relay scan length is no more than one wafer diameter. In related art devices, the optics are fixed, and the objective scans in two dimensions, requiring a scan length of up to two wafer diameters. A further advantage of the embodiments shown in FIG. 1 is that the optical path length remains constant, regardless of scan position. Thus, if the object is treated as a focal point, with a specular reflection from the surface of the wafer, the amount of beam spreading does not change. In related art devices, spatial scanning over a wafer surface changes the total optical path length, and thus the amount of beam spreading suffered by a collimated beam. According to an aspect of this invention, locating a particular region of a wafer for measurement is achieved by imaging at least one field-of-view of a surface of the wafer. In the embodiment shown in FIG. 1, reflectometer assembly 100 measures selected regions of semiconductor wafer 10 as located and identified by imaging cameras. Large field-of-view camera 150 and small field-of-view camera 160 image the wafer surface with an approximately 20 mm�27 mm and an approximately 1 mm�1.3 mm field-of-view, respectively. In FIG. 1, a portion of the measurement beam reflected by pinhole mirror 146 is refocused onto small field-of-view (SFOV) camera 160. The resulting image is indicative of patterns on semiconductor wafer 110. The pinhole itself is also imaged onto the SFOV as a dark spot superimposed on the image of the wafer's patterns. This dark spot indicates the precise location where the reflectometer measurement is made with respect to the patterns on the wafer. Alternate embodiments may include a Fresnel lens and a beamsplitter plate or utilize dark-field illumination. FIG. 7 illustrates the use of a large Field-Of-View (LFOV) camera and a small Field-Of-View (SFOV) camera to image a wafer surface and avoid groping in the process of locating a particular region of a wafer. In FIG. 7, die 700, LFOV 702, SFOV 703, LFOV pattern 704, and SFOV pattern 701 are shown. LFOV 702 is generally larger than die 700, and much larger than the uncertainty in the location of the center of the wafer. Thus, it can be moved to a location where it will certainly find LFOV pattern 704 on a die of a randomly oriented wafer. Once the LFOV pattern has been found, the system has much better knowledge of both the orientation of the wafer and the location of its center. Thus it is able to position the SFOV 703 over the SFOV pattern 701 without groping. This process has a deterministic time that is much shorter than the worst-case scenario for groping with just a SFOV, or than the time for physically aligning the wafer. FIG. 8 illustrates the advantage of using of the LFOV camera to enable easy die size determination during training. In FIG. 8, dies 800, inter-die streets 840, inter-die alleys 850, die features 805 a-c, large field of view 802, small field of view patterns 803, 804 and 801, and measurement site 806 are shown. For training purposes, operators find it advantageous to view the wafer right side up, and moreover to orient the wafer so that inter-die streets 840 and alleys 850 appear vertical and horizontal, as shown in FIG. 8. However, such an orientation of the wafer is not necessary and other orientations are possible in alternative embodiments. An initial rough estimate of die size can be made from three occurrences of a die feature, eg. 805 a-c, selected by the operator on three different dies. The system can then use pattern recognition and the LFOV and/or SFOV cameras to obtain a very accurate determination of die size by locating LFOV and/or SFOV patterns, 804 and/or 801, on various dies on the wafer. With this method, it is not necessary for the operator to know the die size a priori. Another advantage of the LFOV camera is ease of training human operators to correlate measurement sites and patterns in the SFOV with the position on the wafer. Ideally, the large field of view covers a whole die, as shown in FIG. 8. Using large field-of-view 802, an operator can select the region of the die 800 to view with SFOV 103. This is similar to using a state map to navigate to a particular city. Once the SFOV has been properly positioned, the operator can very precisely select SFOV pattern 801 and the measurement site 806. This is similar to finding the correct intersection on a city map. In a preferred embodiment, there may be a multiplicity of measurement sites within a die. In such cases, different sites may have different �stacks� of layers that are to be measured. The thickness algorithm, i.e., the parametric minimization of a cost function as discussed in U.S. Provisional Application Ser. No. 60/125,462, generally needs to have a priori information, the algorithm recipe, about each stack that is measured. In cases where there are multiple sites per die with different stacks, the system must either use multiple algorithm recipes, or have a general algorithm recipe to accommodate the different stacks. The reflectometer shown in FIG. 1 is included for purposes of illustration and not limitation. Alternate embodiments of the imaging metrology device comprise other metrology systems, including acoustic systems. Such alternate metrology system may be coupled to the same optics breadboards shown in FIG. 1 for reflectometer system 100. Particular embodiments may also require the use of flexural bearings for smooth repeatable motion on micrometer or sub-micrometer scales. Exemplary alternative embodiments include a profilometer to determine amounts of recess, dishing, or other departures from planarity of a wafer surface and a profilometer in combination with a reflectometer. In different embodiments, a profilometer may be an acoustic profilometer or an optical profilometer. A particular embodiment of an optical profilometer may use the auto-focus system described in U.S. Provisional Application Ser. No. 60/125,462, to determine a relative profile of a wafer surface. The auto-focus system is inherently sensitive to the profile of the wafer surface since departures from planarity of the wafer surface will cause differences in the focussing of light rays reflected from the wafer surface. Other embodiments of this wafer metrology device may include an ellipsometer or high-contrast imaging microscopes. Particular embodiments may utilize aspects of differential interference contrast (DIC) techniques. Polarization techniques may be incorporated to infer quantitative information about the wafer surface according to techniques well known in the art. In particular embodiments, an integrated interferometer, and imaging spectrograph may be used to simultaneously determine the wafer surface's profile and material content. Preferred embodiments further comprise motion control systems, image pattern recognition systems, and software to determine the quantities of interest from measured data. These elements are well-known in the art. It is noteworthy that in the embodiment shown in FIG. 1, semiconductor wafer 10 is located above reflectometer assembly 100. In alternative embodiments, the semiconductor wafer may be held in a pool of water above or below the optical system. With the wafer below the optics, the system may be configured to �look� down instead of up. This would necessitate differences from FIG. 1 in the handling of the wafer, which would have its IC device side up. In such alternate embodiments, either the optical system (including a main window) may be lowered toward the semiconductor wafer or the semiconductor wafer may be raised toward the optical system. Such an alternate embodiment would be a 180 degrees rotation of the system about a horizontal axis, as compared to FIG. 1. General rotations of the system relative to the configuration shown in FIG. 1 are also possible, e.g., 90 degrees. The main impact of such rotations is on the wafer handling techniques. In particular alternative embodiments of the invention, there may be no water in the measurement path. That is, the instrument is �dry�. In such embodiments, the orientation of the instrument relative to the laboratory may be arbitrary. For example, the embodiment of FIG. 1 could be operated on its side or upside down. While redesign of some of optical components might be preferred in such cases, it would not be necessary. As can be appreciated by the skilled person, many other optical layouts than that shown in FIG. 1 are also possible without departing from the invention, including embodiments using substantially all reflective optics including curved reflectors. As one skilled in the art will recognize, the use of reflective optics has several advantages including minimizing Fresnel reflections, and chromatic bandwidth limitation and aberrations. In certain embodiments, however, refractive optical components are preferred since reflective optics may introduce constraints on aperture and geometry. In such embodiments, the optical system is color-corrected and if the semiconductor wafer is immersed in water, the water is considered as an optical component. An embodiment of an illumination system illustrated in FIG. 12. The illumination system must fill the desired (small) field of view of objective 190, to allow for pattern recognition. It must fill the desired numerical aperture of the system to achieve a small (diffraction) spot size. It must maintain uniform light level, especially at the center of the field of view, where the pinhole mirror 146 samples light for spectral measurement, especially as the second optics breadboard 197 translates in the X direction. The effective light source for the system is the end of the fiber 103. The objective 190 and imaging lens 137 form an infinite conjugate imaging system. This allows scanning of the second optical breadboard 197 in the X direction with negligible changes in magnification or focus. The objective collimates light emanating from points on the wafer, and the imaging lens focuses collimated light onto the pinhole mirror 146. One embodiment is a system with �critical illumination�, as shown in FIG. 12 where collimator 130 collimates light from the end of fiber 103 which is then imaged onto the field of view on wafer 120. The advantage of critical illumination is that illuminating light is collimated. When the second optics breadboard 197 moves in X, e.g., to 197 b, the same bundle of rays from the same point on the end of the fiber is imaged onto the center of the field of view where the measurement spot lies. Thus the measurement intensity is not affected by X position if the system is properly aligned. A potential problem with critical illumination is that nonuniformities in the illumination at the end of the fiber may be superimposed on the image of the wafer as seen by the camera. A standard illumination system used in related art is Kohler illumination. In true Kohler illumination, the light source is imaged onto the illumination pupil of the objective and the aperture associated with the light source is imaged onto the field (wafer). Any non-uniformity versus position on the fiber end is converted into non-unifornity versus incident angle on the wafer, which is generally not apparent. The intensity distribution versus angle at the fiber, which should be nearly uniform, is converted into uniform intensity versus position on the wafer. True Kohler illumination is not possible with the geometry shown in FIG. 12, since the illumination pupil of the objective moves relative to the fiber, so that the proper focus is not maintained. FIG. 13 illustrates an embodiment with Kohler illumination. The embodiment in FIG. 13 allows Kohler illumination by fixing the fiber and illumination optics to the second optics breadboard, so that they move together. In this case, Kohler optics 172 in FIG. 13 replace collimator 130 in FIG. 12, and the fiber 103 flexes for motion of the second optics breadboard in both X and Y. A preferred embodiment of the illumination for the small field of view is pseudo-Kohler, as shown in FIG. 14. The pseudo-Kohler optics 173 image the end of the fiber 103 at a plane 171 just in front of beamsplitter 104 when the second optics breadboard is in its position closest to the illumination optics. To enlarge the image of the fiber to the size of the objective aperture in a short length requires the illumination optics to have a short focal length. Most of the magnification in the illumination optics is done by sapphire ball lens 175. The exit aperture of the fiber, which initially is at infinity, is imaged by the ball to a plane near the second surface (top) of the ball. The two plano-convex lenses 176 image the aperture at a point nearly at infinity, and objective images fiber aperture close to the wafer. FIG. 15 shows the illuminator hardware of an embodiment of the invention. The illuminator supplies light to the illumination fiber 2155. Xenon arc lamp 2150 emits light that is focused by perforated elliptical mirror 2151 to produce illuminating rays 2152. The perforation of the mirror and the presence of the arc lamp produce a shadow zone 2153. The relay lenses 2154 project illuminating rays and shadow zone onto the fiber tip. The shadow covers a range of angles, as opposed to position. This angular shadow tends to propagate through the fiber and out the other end. This angular shadow may be converted by Kohler and pseudo-Kohler illumination to a shadow positioned in the center of the illuminated field. FIG. 16 shows an embodiment that solves the problem of the angular shadow discussed above. In this embodiment, a ball lens 2156 is inserted between fiber 2155 coming from the illumination system and fiber 103 that goes to the instrument. The ball lens images the exit pupil of the fiber 2155 onto the (input) surface of fiber 103, and the exit surface of fiber 2155 onto the entrance pupil of fiber 103. Thus roles of position and angle on the two surfaces are interchanged. The light leaving fiber 2155 is relatively uniform as a function of position but suffers from the shadow 2153 as a function of angle. The light entering fiber 103, after passing through the ball lens is uniform in angle, and now shadow 2155 appears in the spatial pattern of illumination. Due to the effect of fibers to spatially homogenize the illumination pattern, the light leaving fiber 103 will tend to be uniform in both angle and position, and a suitable source for Kohler or pseudo-Kohler illumination, or even for critical illumination, if the end of the fiber is very uniform. Alternate embodiments including light collectors, or condensers, or funnels are also possible. A preferred embodiment for the illumination of the large field of view (LFOV) is shown in FIG. 17. The light source 2170 is preferably a LED. First optical breadboard 195 holds the light source 2170 on support 2173, which allows for alignment of the light source with the rest of the illumination system to be described. The whole LFOV optical system thus translates in Y with the first optics breadboard 195. The second optics breadboard 197 holds the other two components of the LFOV illumination system, lens 2171 and beamsplitter 2172. Light from the source 2170 passes through the lens, reflects from the beam splitter and illuminates the wafer 111, where it is reflected and passes through the beamsplitter 2172 on its way to the LFOV lens 139 and ultimately the LFOV camera 150. In order to produce Kohler illumination, illumination lens 2171 preferably focuses the light into the entrance pupil of imaging lens 139. Focusing lens 2171 is preferably a Fresnel lens, binary optic, or some other diffractive optic, to reduce its physical thickness so that it restricts the movement of second optical breadboard 197 as little as possible. Beamsplitter 2172 is preferably a plate-type beamsplitter. Preferably optical absorber/diffuser 2174 prevents light which passes horizontally through the beamsplitter from reflecting off other surfaces (e.g., objective 190) and being reflected by the beamsplitter down towards the camera. The LED and dimensions are chosen so that the light uniformly illuminates the desired LFOV on the wafer. Both the large and small field-of-view imaging systems preferably include filters to enhance contrast for various types of wafers. In embodiments with the simplest implementation, these are filters yield good contrast over a wide range of wafers, and are built into the system. Preferably, the filters can be selected, possibly under computer control, to allow for better contrast on a wider range of wafers. The SFOV optical train includes the pinhole mirror, which samples light for the spectroscopy measurement. It is advantageous to have the filter after the pinhole mirror, so that it does not restrict the spectral range of the measurement not reduce the amount of light entering the spectrometer. In embodiments where the filter is before the pinhole mirror, it should be movable; to allow images for pattern recognition to be recorded with the filter, and spectra to be acquired without the filter. A preferred means of moving the filter, in this case, is a computer-controlled flipper mechanism. To save space inside the instrument, the moveable filters may be placed before the fiber in the collimated space of the illumination optics. Filters are preferred in embodiments where the light source is broadband, e.g., white, as discussed above. In some embodiments, the illumination is narrow band, e.g., an LED or laser. In these embodiments, it is advantageous to have selectable colors, so that selecting the best of the emitted wavelength bands can enhance the image contrast. One embodiment with selectable colors is with multiple devices having different colors. These can be selected by either mechanically moving them into position, or with beamsplitters. A preferred embodiment uses a two color LED, which allows purely electronic selection without impacting footprint or illumination alignment. According to this invention, the cameras for the two fields of view can operate in a number of different modes, with tradeoffs in throughput, and signal to noise ratio. The cameras can have fixed, computer selected or camera-selected shutter speed. The cameras can have fixed, computer selected or camera-selected gain. It is desirable to have selectable shutter speed and gain, in order to get good image signal to noise ratio on a wide variety of wafers. In camera selected mode, electronics associated with the cameras examine the intensities at the pixels and choose �good� values to balance saturation at some pixels and low levels at other pixels. An alternative to camera selection is computer selection, where the instrument's computer commands shutter-speed and gain. The basis for the commands is from analyzing images either at run time, to yield the best signal-to-noise ratio, or at training time, to maximize run-time throughput. A hybrid approach of particular embodiments allows the camera to adjust the value(s) at training time when the computer reads the values, and the computer sets the values at run time. In a preferred embodiment, a window separates the wet wafer from the dry optical system. This mirror is preferably anti-reflection coated to reduce reflections at its surface. It is more important to coat the dry side of the window than the wet side, since the reflections at air/glass interfaces are greater than those at water/glass interfaces. Making fast and accurate measurements of film thickness is an object of the invention. To some extent, the algorithm used to reduce spectral data to infer film thickness(es) can trade speed for accuracy: a more accurate algorithm takes more time. The algorithm may be one of the most CPU intensive tasks for the instrument's computer. According to the principles of this invention, the tradeoff between time and speed may be overcome by using asynchronous data processing. Synchronous data processing means that each spectrum is processed after it has been acquired and before the instrument does anything else. Asynchronous data processing means that after a spectrum is acquired, the computer commands the instrument to proceed with data collection, and processes the acquired spectra while it is waiting for the rest of the instrument to execute commands, e.g., stage motions. In preferred embodiments, this may be implemented with multi-threaded programming. In such embodiments, threads of relatively low priority process backlogged data, while other threads of higher priority continue data collection as fast as the instrument will allow. Multiple spectra may be backlogged. For an algorithm of a particular embodiment, asynchronous data processing is at least as fast as synchronous processing, and may be significantly faster. In a preferred embodiment, data from previously measured wafers is not allowed to accumulate, i.e., all the data from one wafer is processed before data from the next wafer is acquired. To achieve accurate measurement results with a data reduction method, preferred embodiments use a reference reflector to collect data allowing a correction for slowly varying characteristics of the measurement system in a data reduction method. FIG. 4a shows an exemplary embodiment with a reference reflector. In FIG. 4a, wafer 420, window 422, reference reflector 429, reference volume walls 430, reference volume 431, main volume of water 421, objective lens assembly 427 and relay optics 435 are shown. In FIG. 4a, reference volume walls 430 separate the reference volume 431 from the main volume of water 421. Reference volume 431 may be filled with air, water, or other suitable substances. It is preferred that the reflectivity of reference reflector 429 is very stable over time. The distance between window 422 and the reference reflector can be adjusted if volume 431 is not filled with water, to put the reflector in focus when the objective lens assembly 427 is the same distance below the window 422, as when the wafer is in focus. In a preferred embodiment, the volume is filled with an inert solid, and the height of the reflective surface above the window 422 is adjusted appropriately. Reference reflector 429 may be of silicon, fused silica, chromium or any other inert material. It may comprise layers of deposited material on a substrate to achieve mechanical and optical stability. In a preferred embodiment, the reference reflector comprises a fused silica substrate with a chromium film on a top surface. An alternative embodiment of the reference reflector uses silicon with a reflective oxide layer on a lower surface. Referring to FIG. 4a, reference reflector 429, reference volume walls 430 and the window 422 may be assembled in differing ways. In a preferred embodiment, the reflector and window are hermetically sealed to the window. In an alternative embodiment, the reference reflector, reference volume walls and the window are held together with a polymer adhesive, e.g., epoxy or super glue. In other embodiments, volume 429 is not sealed off from main volume 421. The components are either bonded together or held in place mechanically, for example with stops and springs. The reference volume is sealed in order to preserve the reflectance of the reflector, i.e., to avoid it getting dirty or corroded due to materials introduced into the bath, e.g., CMP slurry. Sealing volume 431 avoids the problem of breaks or leaks caused by different thermal expansion coefficients, either during operation or shipping. In preferred embodiments, reference reflector 429 is placed in a position where the objective lens assembly 427 can have direct access to it. Preferably, the objective lens assembly can scan in at least one dimension, and move to the location of the reference reflector. However, in embodiments where the wafer scans over the objective, the reference reflector may do so as well. While a preferred embodiment has the wafer above the objective lens assembly as illustrated in FIG. 4a, alternate embodiments may have the objective lens assembly above the wafer, or at an arbitrary inclination. According to aspects of this wafer metrology device described above, a reference spectrum from the reference reflector 429 is collected periodically. Following collection of a reference spectrum a data reduction algorithm utilizing the reference spectrum is used to calculate film thickness from spectra collected from wafer 420. Preferably, a reference spectrum is collected every time just prior to a wafer measurement. There are numerous ways to include the reference spectrum from the reference reflector into a data-reduction algorithm. In one embodiment, every spectrum from the wafer is normalized with the most recently measured reference spectrum from the reference reflector. Calibration of the measurement apparatus may utilize a calibration wafer and the spectrum collected from it. Calibration adjusts the algorithm described above so that it gives the correct answer for the calibration wafer. The reference spectrum should be used by the algorithm at calibration in the same way that it is used during measurements of wafers, so that any changes in the system between the last calibration and the current measurement will not affect the results of the algorithm. As described, embodiments of this wafer metrology device (see FIG. 1 and FIG. 4a) may include a reference reflector and dual spectrographs. The primary data for the measurement is the spectrum S, which is the system's output representing reflection from the sample under test. In addition to the properties of the sample, S depends on the characteristics of the broadband (UV, visible, NIR) illumination, the optical system, detectors and digitizers and other elements that comprise a measurement system. Such measurement system characteristics obscure information about the sample. Thus, an accurate measurement of film thickness should remove their effects. In FIG. 1 the sample under test is the semiconductor wafer 110. It is noteworthy that the sample may also be the reference reflector or the calibration reflector, as discussed above. From FIG. 1, the optical path for light determining the monitor spectrum may be similar to the optical path for the light determining the measurement spectrum, except for transit to and from measurement region 111. A preferred embodiment of the two beams is shown in FIG. 1. In preferred embodiments, the illumination source may be identical for both beams. FIG. 4b shows an exemplary embodiment of the alignment system allowing rapid alignment of a wafer with the optical system. In FIG. 4b, wafer 453, rotary chuck 452, motor 462, water 454, window 455, water level 460, motor housing 450, rotary seal 451, light source 457, light 463, alignment window 458, detector 456, and tank wall 461 are shown. In FIG. 4b, rigid rotary chuck 452 holds wafer 453. Motor 462 turns the rigid rotary chuck about an axis (not shown). Water 454 fills the area above main window 455 up to water level 460 and over to tank wall 461. Rotary seal 451 seals motor housing 450 from the water. Light source 457 is also in a dry housing. The light source produces light 463 that passes through alignment window 458 from the dry housing into the water. Detector 456 is in the dry volume below window 455. Some of the light 463 strikes wafer 453 and is blocked. The rest of the light passes through main window 455 into the dry volume below it, and onto the detector. Rigid rotary chuck 452 rotates wafer 453. As the wafer rotates, the edge of the wafer that is directly over the detector moves in a radial direction (to the left and right in FIG. 4b). The radial motion arises due to the wafer being off-center on the rigid rotary chuck or not being perfectly round. Aside from machining tolerances, the presence of a fiducial notch or flat on the rigid rotary chuck causes the wafer to be out of round. Radial motion of the edge of wafer 453 over detector 456 changes the shadowing of light 463 which falls upon the detector. The detector can be either a single long detector, e.g., a photo-diode, or an array of detectors, e.g., a charge coupled device (CCD). In the former case, the total amount of the light falling on the detector is an indication of position of the edge of the wafer. As the edge of wafer 453 moves to the right in FIG. 4b, the amount of light falling upon the detector decreases. In general, the output of the detector, I, is some function of the position of the edge of the wafer, xe;
The quantity I is not necessarily linear but is monotonic, so that its inverse
may be used to determine the location of the edge. In an alternate embodiment, the detector may consist of an array of detectors, with each element in the array having a different location, xa. In this case the intensity of light falling on the different detector elements gives rise to a waveform:
The quantity I can be processed by an algorithm, h, such that
Functions g and f may be complicated, due to wave-optics considerations (FIG. 4 is illustrative only of ray-optics). Determination of f or g is by calibration. FIG. 5 illustrates calibration of the wafer alignment. In FIG. 5, spiral wafer 500, chuck 503, spiral edges 504 and 505, detector 506, and source 507 are shown. Spiral wafer 500 has a thickness comparable to that of a silicon wafer; is made from a durable, clean, machinable, opaque material, eg, stainless steel; and has a mechanical index to insure that its center is aligned with the center of the chuck 503. As the chuck rotates, the spiral edges 504 and 505 block amounts of light emanating from source 507 from reaching detector 506. As the spiral rotates, the system records the detector output as a function of angle. The discontinuity in the radius of the spiral 505 indicates when the spiral is over the detector. The radius of the spiral as a function of angular displacement from the discontinuity 505 is known. Thus, the functions g(xe)or f(xe) can be recorded, so that f−1 or h can be calculated for use with real wafers. The outcome of the above-described measurement enables the calculation of the location of a notch or flat on the wafer, and the location of the center of the wafer with respect to the center of the chuck, from I for a set of rotations covering 360 degrees with f−1 or h. FIG. 6 shows another aspect of the wafer metrology device that improves the accuracy of wafer alignment. In FIG. 6, beam splitter 600, lens 601, reference detector 602, light source 607, window 608, rays 613, collimating lens 610, and wafer 606 are shown. In general, the intensity of the source 607 can vary as a function of, eg, time and temperature. In order to correct or compensate for this, some portion of the light can be deflected by a beam splitter 600, possibly focused by lens 601, and detected by reference detector 602. The output from the reference detector can be used either to control the output intensity of the source, or to correct the inversion of data for variations in the source. FIG. 6 shows another exemplary illumination scheme. In this case the source 607 produces diverging light. In this embodiment, lens 613 collimates the rays 613. In other embodiments a collimated source may be used. Additional embodiments may uses a diffusing element following the source in order to homogenize the spatial mode profile of the source. There are three distinct advantages to wafer alignment: First, during training the operator can always view the wafer �right-side-up,� e.g., with the notch in the direction towards the bottom of the view screen. This makes training of the system easier. Second, pattern recognition is more difficult with arbitrary orientations of the wafer. The better the initial alignment, the easier is pattern recognition. Third, the pinhole can have a square cross section (perpendicular to the measurement or monitor beams), which allows for greater light transmittance without an increase in the minimum box size that can be used for the measurement. Embodiments of this wafer metrology device may be integrated into a wafer processor. As described above, different embodiments of this wafer metrology device allow it to be at different positions relative to the wafer under test. Particular embodiments utilize raiser and feeder elements to take wafers from other locations and introduce them to an apparatus according to this wafer metrology device. FIG. 18 shows a preferred embodiment integrated with a wafer process station in a fabrication line. For purposes of illustration and not limitation, the process station in the embodiment in FIG. 18 is a polisher. A polishing machine 1 and an integrated surface metrology station, ISMS 10, are shown. The polishing machine 1 comprises a polishing unit 14, loading areas 18 and transport system 22. In addition wafers 16 in carriers 18 are shown. As shown in FIG. 18, the metrology station is apart from the process station and coupled to the process station. Wafers 16 are brought to and taken from polishing machine 1 in carriers 18 through loading areas 20. The carriers may be cassettes or FOUPs, terms common in the art. Transport system 22 is a device or set of devices for transporting the wafers within polisher 1. Specific embodiments may comprise a robot, such as the EquipeWTM-105. The transport system can move the wafers to any of the carriers 18, the polishing unit 14 or the ISMS 10. In many CMP applications, the CMP machine is dry-in/wet-out. After leaving the CMP machine, the wafers go to a cleaner/dryer, which is wet-in/dry-out. After going through the cleaner/dryer, the wafers can be measured on a standard standalone, dry metrology system. If there is not an integrated, wet metrology system on the CMP machine, then there is a long delay between polishing the wafer and the first time it can be measured in detail, to see if the CMP process is performing well. This delay is undesirable, since it reduces the ability to tightly control the process with information from wafers that have just been polished. In situations as described above, a wet standalone metrology system reduces the delay and improves the ability to control the CMP process. This is an attractive option in a number of situations, i.e., 1. where there is an installed base of CMP machines which cannot be retrofitted with integrated metrology. 2. where the cost of fitting multiple CMP machines with integrated metrology is prohibitive, and one standalone machine can service multiple CMP machines. The new process flow according to the present invention comprises acts of 1) polishing, 2) measuring the wafers while wet, and 3) cleaning and drying. The wet wagers require a special wet metrology system to avoid the deleterious effects of water, especially in the form of droplets, on the measurement or measurement system. A wet standalone system according to this invention should keep the wafers substantially wet while they are on the system. In typical embodiments, a cassette of wafers would be placed on the system. While one or more wafers are being measured, the rest of the wafers in the cassette should not substantially dry off, because the wafers are wet with slurry that may form a �cement� on the wafer if allowed to dry. A standalone system according to this invention accomplishes this either by immersing the wafers or misting them, in respective embodiments. In an embodiment including an immersion system, the wafers in a cassette may be held in tank. If the wafers are horizontal or at an angle near horizontal, the cassette may be raised and lowered to allow robot access to wafers while keeping them wet. An angle near horizontal is preferable to horizontal to reduce the hydrodynamic forces of raising and lowering the wafers, and to help keep the wafers fully inserted in the cassette. If the wafers are either vertical or at an angle near vertical, hydrodynamic forces may be reduced to a minimum, the tendency for wafers to �float� out of the cassette may be eliminated, and it may be possible for the robot to pick and place wafers without raising the cassette out of the water. According to this invention, there are several embodiments for handling the wafers. In a particular embodiment, the wet wafers are loaded manually into the wet metrology unit, e.g., with a vacuum wand. Alternate embodiments have a robot, which extracts the wafers from the cassette, and returns them. In further embodiments, a cart that is used to transport wet wafers docks onto the metrology system, and the robot lifts the wafers out of the cassette, which may be still on the cart. The cart may be a manual or robotic cart. According to this invention, the metrology of a particular embodiment may be any metrology that is relevant to the CMP process. In embodiments for dielectric CMP, film-thickness metrology is included. In embodiments for STI and metal CMP, dishing and erosion metrology is included. In embodiments for ILD CMP, detection of puddling is included. In most embodiments, defect detection is included. In most embodiments, short-time, detailed feedback is provided when the system is being brought up after a pad change or any maintenance. In these embodiments, monitor wafers are used to gather information. Shortening the delay between polishing and measurement according to these aspects of the invention decreases the down time and improves overall equipment effectiveness (OEE). The foregoing description of various embodiments of the invention has been presented for purposes of illustration and description. It is not intended to limit the invention to the precise forms disclosed. Many modifications and equivalent arrangements will be apparent. Patent Citations
Referenced by
Legal Events
Rotate |

subset: commoncrawl


text:
Min. Order: 1 Pieces
FOB Price: USD 0.5-0.6 Piece
Supply Ability: 20,000 Piece/Pieces per Week
tumbo industry limited
Contact Details China(Mainland)
FOB Price: USD 5-200 Piece
Supply Ability: 10,000 Piece/Pieces per Month
Xiamen Century Arts & Crafts Co., Ltd.
FOB Price: USD 10-2,000 Piece
Supply Ability: 1,000 Piece/Pieces per Month
Xi'an Kingwell Oilfield Machinery Co., Ltd.
Min. Order: 10 Pieces
FOB Price: USD 5-100 Piece
Supply Ability: 3,000 Piece/Pieces per Week
Shandong Weida Machinery Co., Ltd.
Min. Order: 1 Sets
FOB Price: USD 25,000-30,000 Set
Supply Ability: 100 Set/Sets per Year
China (Hong Kong) Emblem Colliers International Limited
FOB Price: USD 20,000-21,000 Set
Yiwu Zhongyi Decorative Material Co., Ltd.
Min. Order: 1 Rolls
FOB Price: USD 38,000-40,000 Set
FOB Price: USD 30,000-40,000 Set
Product Brief: Product Name: SOLVENT BLACK NS (SOLVENT BLACK 27)-Metal Complex Solvent Dye Countertype: (BASF)Zapon Black X 51, (ORIENT)Black 3820, Black 3840, (ALBIONBricosol Black NB; (GCI)Complesol Black 6822;
Hangzhou Emperor Pigment Co., Ltd.
Product Brief: Turehearted painting by number product contains: Canvas:Advanced material made of pure cotton canvas, canvas layer uniform level off, smooth painting pattern print clearly, the line A clear, strong
Zhuhai Truehearted Manual Craft Co., Ltd.
Min. Order: 200 Pieces
FOB Price: USD 20-52 Xiamen
Days Painting Co., Ltd.
Large Span Group
Min. Order: 1 Metric
FOB Price: USD 899-1,999 Metric Ton
Supply Ability: 800 Metric Ton/Metric Tons per Month
Hebei Haihao High Pressure Flange & Pipe Fittings Group Gee Pipe Mill Co., Ltd.
FOB Price: USD 5-1,000 Piece
Supply Ability: 5,000 Piece/Pieces per Month
Chizhou Sega Valve Manufacturing Co., Ltd.
FOB Price: USD 4.5-9.5 Piece
Supply Ability: 1,000,000 Piece/Pieces per Month
Shenzhen Changfang Semiconductor Light Co., Ltd.
FOB Price: USD 5-99 Piece
Supply Ability: 2,000 Piece/Pieces per Month
Meisheng Oil Painting Manufacture Co., Ltd.
FOB Price: USD 0.5-99 Piece
Supply Ability: 800 Ton per Week
Cangzhou Steel Pipes Co., Ltd.
FOB Price: USD 2,500-2,580.25 Set
Supply Ability: 100 Set/Sets per Month
Huyue Printing Co., Ltd.
Min. Order: 30 Pieces
FOB Price: USD 9-11 Piece
to Hunting Art Co., Ltd.
FOB Price: USD 25-299 Piece
Supply Ability: 1,000 Piece/Pieces per Day
Xiamen Winwin MFG Trading Company
Min. Order: 2,000 Pieces
Product Brief: Features (1) We supply high quality canvas permanently protected with acid free and primary suitable for oil and acrylic painted (2) Style:nails on side, staples on side, staples on back, nails on
Suqian Stronger Art Material Co., Ltd.
Product Brief: il on Canvas 100% hand made oil paintingno frame and no strechedSize: 20x24inch (50x60cm) 24x36inch(60x90xm) 30x40inch(76x100cm) 36x48inch(90x120cm)Any size as your request
Cufale Oil Painting Studio
Min. Order: 500 Pieces
FOB Price: USD 1.5-3.0 Piece
Supply Ability: 500,000,000 Piece/Pieces per Month
Yangzhou J&K International Co., Ltd.
Min. Order: 1 Perches
FOB Price: USD 7.85-28.5 Piece
Supply Ability: 3,000 Piece/Pieces per Month
Guangzhou DMY Oil Painting Co., Ltd.
Min. Order: 10 Tons
FOB Price: USD 600-650 Ton
Supply Ability: 10,000 Ton/Tons per Month
Tianjin Yilitong Industry & Trading Co., Ltd.
Product Brief: Size:General 12"x16",16"x20",20"x24",24"x36",24"x48",30"x30",30"x40",36"x36",36"x48",48"x60".Customized sizes are available. Additional canvas border 2-4" for stretching or as your
INNOV Art Co., Ltd.
Supply Ability: 8 Set/Sets per Month
Shanghai Kaiyan Construction Machinery Co., Ltd.
FOB Price: USD 1-98 Xiamen
Supply Ability: 8000 Piece/Pieces per Month
Xiamen Unique Oil Painting Co., Ltd.
Haven't found the right supplier yet ?
Post your exact RFQs, ECVV.com will match suppliers for you!
Post a buying lead >>
Want the latest & hottest Products Info. for "Oil Painting"?
Subscribe to your interested Product Alert and you will get emails with the lastest and hottest Product Info. periodically.It's free!
Knife painting landscape,...
komatsu used loader from ...
Decorative plastic wool s...
k span Framed Openings
Durable jis 5k cast iron ...
wholesale diy handmade oi...
white latex paint bucket ...
Famous landscape canvas o...
Blank Stretched Canvas Fo...
Venice Italian Couple Can...


text:
Find Rooms
From USD
per nightGold and Platinum iPrefer members receive one afternoon tea for two when booking here or through iPrefer.com.
This hotel is tagged in:
Paddington Area, Marylebone Area
Browse other hotels in:
London, United KingdomAccommodations
The Colonnade offers luxury London accommodations. Each guestroom features cable/satellite flat-screen televisions and wireless Internet access.
- Single Rooms
- Club Rooms
- Twin Rooms
- Deluxe Rooms
- Studio Suites


text: Not much of an attraction. Nothing but a broken castle wall actually, BUT definitely the most amazing view of Izmir. Just be wary of the kids begging as son as you exit the taxi. Pay them any attention and you hounded for the entire visit. Give them money and they look at you like "Is this all you going to... More


text:
Art and Nature
Three Centuries of Natural History Art From Around the World
From Library Staff
An astonishing visual record of the exploration of parts of the natural world that had never previously been documented. It features many of the greatest natural history artists of the last 300 years--Merian, Bartram, Ehret, the Bauer brothers, Audubon and Gould.
Art and Nature draws on the collections of the Library of the Natural History Museum to illustrate the development of natural history art through the centuries and its crucial role in furthering people's appreciation of nature around the world.


text:
What does GPR mean in Spanish?
This page is about the meanings of the acronym/abbreviation/shorthand GPR in the International field in general and in the Spanish terminology in particular.
Find a translation for GPR in other languages:
Select another language:
Discuss this GPR abbreviation with the community:
Use the citation below to add this abbreviation to your bibliography:
"GPR." Abbreviations.com. STANDS4 LLC, 2015. Web. 2 Mar. 2015. <http://www.abbreviations.com/term/56431>.
GPR also stands for:
- Gaylord Palms Resort
- gene protein reaction
- GenePix Results format
- General Practice Residency
- General Purpose Reagents
... and 25 more »
Nearby & related abbreviations:
Alternative search:
- Search Grupo Parlamentario Regional on Amazon
- Search Grupo Parlamentario Regional on Google


text:
quote:The GOP was a fine Party until it was hijacked by the Southern Strategy & the Religious Right.
quote:Obama won by less than 400,000 votes in swing states... Through fraud.
quote:quote:The GOP was a fine Party until it was hijacked by the Southern Strategy & the Religious Right. Bull shite...Its the same party. The populous has decayed as more Americans than ever seek entitlements from government. The Democrats play the Game better though. They know exactly how to play to their base. The question is, will the country implode before people realize how bad things are getting or will there be time to stop it.
quote:Bull shite...Its the same party. T
quote:Despite trying to fight back the 'crazies'(as Chris Christie called them) in the GOP Steele presided over the take over of 63 seats the GOP. Jindal & other Republicans are now trying to fight back the crazies(just as Steele was attempting when he was head) when they see that it is losing the demographic battle with women & minorities.


text:
Wichita firms make biggest residential real estate brokers list
Two Wichita-based real estate firms placed on the Real Trends 500, an annual ranking of the nation's top residential brokerages based on sales volume and closed transactions.
J.P. Weigand & Sons ranked 182nd on 3,252 closed transactions in 2013. It ranked 290th on a separate list for closed sales volume of $582.7 million.
Coldwell Banker Plaza Real Estate ranked 442nd on 1,593 closed transactions in 2013.
The annual list also named several other Wichita firms to its Up-and-Comer list for closed transactions: Keller Williams Wichita East, with 748; Re/Max Premier, with 717; and Re/Max Realty Professionals with 561.
The list is published every May by Colorado-based Real Trends, which said it independently verifies the numbers that are self-reported by brokerages.
Join the Discussion
The Wichita Eagle is pleased to provide this opportunity to share information, experiences and observations about what's in the news. Some of the comments may be reprinted elsewhere on the site or in the newspaper. We encourage lively, open debate on the issues of the day, and ask that you refrain from profanity, hate speech, personal comments and remarks that are off point. Thank you for taking the time to offer your thoughts.


text:
DR Strings K3 NEON Hi-Def White Electric Heavy Guitar Strings
Sku #H94796000000000
DR Strings
.011 Gauge Electric Guitar Strings
- Write a Review
- Seen a Lower Price? Click Here.
FREE SHIPPING on Almost Everything
A simple way to perk up your live performances.
Guages: 11, 14, 18, 28, 38, 50.
DR Strings' K3 NEON Hi-Def White Electric Heavy strings are an excellent idea for those wanting to add some pizazz to their rig during performances. It's easy for players to fall in love with the bright color that matches their remarkable sound. Super bright in daylight and under stage lighting, DR Strings' NEONs are 100% black light active and glow strongly under UV lighting. These strings will last you as long as a coated string should (three to four times as long as uncoated strings) maintaining a sound that is not only good, but better than top-quality uncoated strings.
- White coated electric guitar strings on hexagonal core
Order a set today before your next live set.


text:
Product Description
Available while supplies last.
Elegant Glass Bottle
- Elegant and simple
- Artistically shaped glass bottle
- Made in Portugal
Materials: | Glass | |
Weight: | 3 Pounds | |
Warranty | 1 year- warranted against manufacturers defect | |
Vase Type | Table | |
Vase Material | Glass | |
Vase Color | Clear/Translucent |
Coordinating Items
Related Items
Questions & Answers
There are no questions from the community yet
Customer Reviews
This product has no customer reviews yet
Write an online review and be the first to share your thoughts with other customers
Write an online review and be the first to share your thoughts with other customers
Tag This Product
A tag is a keyword assigned to a product which helps describe the item and allows it to be found by other customers
Add a new tag:
Separate multiple tags with commas
What's this?Additional Details
Mfr Part # | |
Sku | |
Group # | 1084896 |
Category | Decorative Vases - 655 |
Style | Transitional - 15 |
Sales Rank | 1096 |
Your Recently Viewed Items
You have no recently viewed items. After viewing product detail pages or search results, look here to find an easy way to navigate back to products you are interested in.
Your Recommended Items
You currently have no recommended items. Browse a few more items to give us an idea of what you like.
©1999 - 2015
Copyright notice | Site Map | By using this site you agree to our Terms & Conditions of Use and Privacy Statement


text:
Next time, install Flickrframe with 1-click
Learn how MacUpdate Desktop can install apps on MacUpdate with the simple click of the icon. Plus, keep all your apps updated.
Flickrframe shows a selection of photos from your favorite Flickr user in a frame on your Dashboard. Photos update every few seconds.
Mac OS X 10.4 or laterSimilar Software
Open Comparison
Suggest Other Similar Software


text:
Mandatory Newsletter
Get a weekly dose of MANDATORY by signing up for our newsletter.
Always make the most of it.
You need to give yourself more credit.
We're just matter that doesn't matter.
They're stopping douchebags, one sticker at a time.
Don't ditch your ride just yet.
What happens in Vegas, usually happens like this.


text:
About Reinoud Leenders
Reinoud Leenders is Assistant Professor of Political Science at the University of Amsterdam. He formerly worked as Middle East analyst for the International Crisis Group based in Beirut (2002-2005). He is coeditor with Steven Heydemann of the volume, forthcoming with Stanford University Press (October 2012): Middle East Authoritarianisms: Governance, Contestation, and Regime Resilience in Syria and Iran


text:
Saucy Chipotle Shrimp
Total Time
20 minsCook
35 minsThis dish is bursting with flavor, especially the smoky chipotles. Feel free to adjust the quantity of red pepper flakes according to your taste, but the amount posted gives you a warm tingle in the mouth. Prep time does not include soaking time for the chipotles or cooling time for the shrimp.
Nutrition- 3 dried chipotle chiles
- 1 lb unshelled raw shrimp
- 3 tablespoons olive oil, divided
- 2 tablespoons finely minced garlic
- 1⁄2 cup dry white wine
- 2 cups water (see recipe step #10)
- 1⁄2 teaspoon chili powder
- 1 bay leaf
- 1⁄4 teaspoon dry chili flakes (or to taste)
- 1⁄2 teaspoon cumin seed
- 1 tablespoon butter
- 1 medium onion, cut into rings
- fresh ground black pepper
- 1⁄4 cup chopped fresh cilantro (optional)
- lime wedge (optional)
- Place the dried chipotles in a small cup with enough nearly boiling water to cover; allow to sit 30 minutes to soften.
- Rinse shrimp under cold running water, and drain thoroughly.
- Heat 2 TBS olive oil in a large heavy skillet and add the shrimps (cautiously, as they may spatter).
- Toss the shrimps in the skillet until the shells turn pink, just a minute or two.
- Remove the shrimps with a slotted spoon to a bowl and leave aside until cool enough to handle (I put mine in the refrigerator for a few minutes).
- Shell and devein shrimp, reserving shells.
- Add the shells back to the re-heated skillet along with half of the garlic and toss until the shells begin to brown a bit, just a few minutes.
- Add the wine and bring to a boil; reduce heat and simmer 2-3 minutes.
- While this is happening, drain the chipotles (RESERVING WATER) and mince them as finely as possible (I don't remove the seeds, but you may choose to do so).
- Add enough water to the reserved chipotle water to equal 2 cups; add this to the skillet along with the remaining garlic, chili powder, bay leaf, chili flakes and cumin seeds.
- Reduce to a simmer and continue to cook until the liquid has reduced by half; strain, and set the liquid aside.
- Wipe the pan clean, then melt the remaining 1 TBS olive oil and butter in it.
- Gently saute the onion rings until they are soft and translucent, and just beginning to brown around the edges.
- Add the minced chipotles and continue to saute for another 2-3 minutes over moderate heat.
- Add a cup of the reserved liquid and simmer until the mixture has reduced and thickened (though it won't really get too thick).
- Add the cilantro, if using, and the shrimps and season to taste with pepper; cook over a moderate heat only just until the shrimps are heated through (overcooking will toughen them).
- Serve over rice, with lime wedges for squeezing on the side, if desired.
Most Helpful
5 5
This truly does wake up those taste buds. For our taste, I used the seeds from the chipotle chilies and left off the chili flakes. Served it over angel hair pasta topped off with freshly grated parmesan cheese.
Nutrition Info
Serving Size: 1 (652 g)
Servings Per Recipe: 2
- Amount Per Serving
- % Daily Value
- Calories 562.8
- Calories from Fat 273
- 49%
- Total Fat 30.4 g
- 46%
- Saturated Fat 7.2 g
- 36%
- Cholesterol 360.9 mg
- 120%
- Sodium 400 mg
- 16%
- Total Carbohydrate 13.2 g
- 4%
- Dietary Fiber 1.6 g
- 6%
- Sugars 3.4 g
- 13%
- Protein 47.6 g
- 95%
Email This
Enter the two words from the image to verify you are human *
Saving Photo...
Add to Recipe Box
Please select a folder


text:
- Home
- Clothing
- Shop by Category
- Trousers
- Wide Leg Trousers
Wide Leg Trousers
This season, we're all about wide leg trousers to add a rad new silhouette to your wardrobe. Our kickin' collection of wide leg trousers covers everything from palazzo and tailored trousers, flares and culottes. Channel the hot 70's flashback trend with some rad flares styled with a shirt, a blazer and a long flowing scarf for bohemian dreams. Culottes are ideal if you wanna get into that slick and sharp tailored vibe but with a modern twist and the high waisted cut of most of our selection mean these trousers will create the illusion that your legs go on for days.
- Category
- Trousers
- Wide Leg Trousers
- Colour
- Size
- Price Range
- £15.00 - £19.99 (1)
- £20.00 - £24.99 (2)
- £30.00 and above (3)


text:
Well here I am on another dating site. What the hell? LOL Anyway my
name is Jon. I'm 42 and still single. Can you believe it? I sure
can't. I never thought it would come to this but here I am. I've
never been married nor do I have kids. I do like them though! I'm a
funny,sweet and loyal kinda guy. I'm sort of the guy next door
type. Pretty laid back. I enjoy
movies,music,sports,walking,hiking,amusement parks. I guess the
list goes on. Everything is enjoyable when your with the one you
want to be with! ;) Hopefully I find her on here. I'm tired of
waiting for her!!!! LOL Hope your it! Your move next. Message me
and we can see what fate has in store for us!!!
I am laid back, hard working, and kind
I am laid back, hard working, and kind


text:
EbonyBook.com is for sale
The owner of this domain has listed it for sale for $925
Buy EbonyBook.com now >
Screenshot Details
The most recent screenshot for this website was taken on Oct 29th, 2013.
We check this website for updates periodically. When we checked 157 days ago, we did not see any significant changes.
We have 24 historic screenshots of EbonyBook.com dating back to Aug 13th, 2005.
Our earliest WHOIS history record for the EbonyBook.com domain was first recorded in the year 2005.
The registrant on the WHOIS record for this domain is associated with about 20,525 domains.
There are 494,048 domains hosted on the same name servers as EbonyBook.com.
View the complete WHOIS record for EbonyBook.com.


text:
Major Airports near Ronchamp
Distance (mi.) | |
EuroAirport Basel-Mulhouse-Freiburg | 41.7map |
Strasbourg Entzheim Airport | 73.4map |
Zurich International Airport | 90.3map |
Other Smaller Airports near Ronchamp
Distance (mi.) | |
Basel/Mulhouse EuroAirport French | 32.0map |
Epinal Mirecourt Airport | 51.4map |
Berne Belp Airport | 67.2map |
Map of Airports in Ronchamp
- Ronchamp, France Hotel Prices Made Easy
Orbitz.com - Just Orbitz and go! - Hotel Deals in Ronchamp, France
Expedia.com - Don't just travel. Travel right! - Book Now with Cheap Tickets and Save on Ronchamp, France Hotels!
CheapTickets.com - Just click. You're there. - Find the best rates for hotels in Ronchamp, France
Kayak.com - Life's a trip.
Hotels Near Ronchamp
ibis Styles Belfort Centre - Hotel
BEST WESTERN Hotel Belfort - Hotel
Novotel Belfort Centre Atria - Hotel


text:
work ethics in the culinary arts and hospitality management career
Running head : Work Ethics in the Culinary Arts Work Ethics in the Culinary Arts and Hospitality Management Career Client 's Name University Affiliation Work Ethics in the Culinary Arts and Hospitality Management Career Ethics in General Generally speaking , ethics or morality is that branch of philosophical inquiry that deals with the question of the rightness or wrongness of an action based on different rules . Ethics in general comprises of a set of rules and the justifications for those rules . There are many ethical theories proposed that have been
posited in philosophical history , such as Kantianism and utilitarianism (Resnik
From this general rules called ethics branch out many specific kinds of ethics that apply only to particular disciplines or fields and these are called institutional codes (Resnik . For example , the scientific community has its own separate code of conduct that regulate their acts (Resnik . Similarly , those who belong in the culinary arts and hospitality management career also have their own rules of conduct to follow , which ensure the professionalism and morality of their actions
Work Ethics , defined
Work ethics is a group of characteristics that are possessed by a person who greatly values his job (AllAboutPhilosophy .org , 2007 . Work ethics comprises of a person 's feelings about his career , particularly the manner by which he discharges his functions (AllAboutPhilosophy .org 2007 . It also consists of a person 's attitudes and virtues as an individual and as a part of a team in his business organization (AllAboutPhilosophy .org , 2007
In essence , work ethics deals with the specific acts that a person does when facing any given situation (AllAboutPhilosophy .org , 2007 . There are certain character traits that are generally considered as part of all codes of ethics , such as honesty and accountability , and these two traits are indeed included in the work ethics applicable to those belonging in the culinary arts and hospitality management career (AllAboutPhilosophy .org , 2007
Justification for Work Ethics
The importance of having work ethics , both at the individual and institutional levels , cannot be denied . Work ethics distinguishes one business organization from another , and could spell the difference between success and failure as an institution . Clients observe the work ethics of each member of a professional staff , and poor work ethics could drive away customers
On the other hand , poor work ethics observed in an individual could lead to bad employer or supervisor review , which could in turn lead to suspension or dismissal from service . Either way , the employee suffers adverse consequences from failure to observe proper working attitudes
Therefore , work ethics is a paramount interest of both an individual and an institution . This is true in all disciplines , including the culinary arts and hospitality management career
In the latter field , three important professional attributes stand out These are attendance , honesty , and appearance . These three must be possessed by anyone desiring a spot in the culinary arts and hospitality management , if they want to succeed
A good attendance record is important because it shows a person 's dedication in...
More Essays on work, ethics, culinary, Management Career, International Association
Related searches on Professional Ethics, International Association, Work Ethics
- work reports
- sample courseworks on work
- courseworks on work
- Management Career analysis
- merits of work
- disadvantages of Culinary Arts
- advantages and disadvantages of International Association
- work summary
- cause and effect of Management Career
- Management Career fallacies
- International Association test
- advantages of ethics
- work introduction