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Easter buffet near Bristol RI
Mar 31, 2011 by donovt in Southern New England
Best hidden secrets in New Hampshire? Thin Crust Pizza, Burgers, Wings?
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ISO Sunday brunch Westford area
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Making mustard!
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Is there a CH equivalent for restaurateurs?
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America's Test Kitchen cooks from Fanny Farmer
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Michael Timothy's, Nashua NH, going in a new direction
Nov 22, 2010 by hummingbird in Northern New England
Tops of Biscotti Crack and Split
Apr 26, 2007 by SteveInSoCal in Home Cooking
To Brine or not to brine? . . . that is my question.
Nov 20, 2006 by blackbookali in Home Cooking
Thanksgiving Dining Options in Portsmouth, NH?
Nov 10, 2010 by matteo1973 in Northern New England
Best canned tomato soup
Sep 20, 2006 by amkirkland in General Topics
Aug 03, 2006 by Janet from Richmond in General Topics
Food Network "Down Home with the Neely's"
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Tonight at 8:00pm old IC Flay vs Tsai
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Request for "reviews" of four Nashua NH restaurants
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Non-drinkers—what do you order?
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Dessert First (New Food Network Program 10-24-2010)
Oct 24, 2010 by Manassas64 in Food Media & News
Ok, I'll do it ... THE NEXT IRON CHEF, SEASON 3, EPISODE 4, "TRANSFORMATION" (obviously spoiler alert)
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Baked brie?
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Norwich/White River Junction with kids
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Best red wine to "serve" fruit flies?
Oct 06, 2010 by jubilant cerise in Not About Food
Polly-O Ricotta is better than Sorrento. How do you like to use ricotta?
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Went to a taping of Ming Tsai today
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Homemade Soft Pretzels
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People Reading Me


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Jul 10, 2011, 12:54 PM | ||
The hybrids are getting to be so good that they can pretty much do it all and not give away very much on either end. Airframe development has been so rapid the last few years that you can hardly build and crash them fast enough to keep up with what's new and improved. The Extreme Flight EXP series are essentially hybrids that look like scale planes and they do awesome 3D and solid precision. Check my blog for flight details on each one. For example, the Extra does it all, but it is biased more toward precision. The Edge does it all, but is biased more toward 3D. The MXS is sort of in the middle of those two, so there is a plane to suit everyone's style or preferance. I'm really looking forward to the new Extreme Flight Pantera EXP (foreground). That one is a true hybrid that makes no pretense about being a scale plane. In fact, it looks a lot like the Vanquish, which has beautiful pattern lines. I think the Pantera is probably not going to give up anything, anywhere, to any other aircraft. |
Jul 11, 2011, 01:49 PM | ||
...the plane is amazing. The stability at speed (pattern) is pretty much unrivaled as the taper/sweep on the wing spreads the pressure across the chord and the plane locks in like every other pattern plane. Without the taper/sweep the plane has more pitch sensitivity which loses some of its pattern prowess (like an Edge... which is crazy awesome at 3D). Slow a Vyper down, huge control surfaces and other particulars come into play and you can throw it around like a 3D beast. it simply rocks. |
Jul 11, 2011, 01:54 PM | |||||||
...and if you ever feel like stepping up to the big one, more awesomeness awaits...
Jul 11, 2011, 02:17 PM | |||
I myself have found that after my short three years of flying, I've experience the best of both worlds.
I've flown pattern with a 60" heavy Aeroworks Edge 540T with a .90 size glow four stroke, to 3D with a floaty Great Planes U-Can-Do, to the best of the best IMAC planes (Godfrey Extra 300 and Laser 200), to the high performance aircraft I am flying now. I've found found that when you have the right airplane, you can easily do both pattern and 3D, and you don't technically need a "hybrid" type to do it with. Whether or not you like the looks of a hybrid is your personal opinion, but I personally want my plane to look like a full scale. My favorite plane so far for this size range (out of the almost 100 planes I've flown) has got to be the 48" Extreme Flight Extra 300 EXP. It has a long moment, and when setup right, will do amazing pattern. It draws beautiful pattern lines big enough to take first place in Basic IMAC (only because it's not 1/4 scale so can't enter anything else... but it could easily perform any maneuver in current IMAC flawlessly with the right pilot). I personally like a mix of 3D and pattern... or as Doc said, "Extreme Aerobatics" and pattern. Here's my most recent video, and if you check out my youtube channel, you will find other videos of my Extra. It does beautiful slow rolls, point rolls, snap rolls... does big pattern quality loops and cuban eights... can fly fast... but then flip the switch to high rates and you have an amazing 3D performer that will leave most other planes in the dust. Here's the video... please excuse the quality. It's decent, but not spectacular.
--Tom K. |
Latest blog entry: 12S on the 3DHS 74" Edge 540
Jul 11, 2011, 02:25 PM | |
nothing like a conversation built on the exaggerated use of superlatives ...
...anyways... in the end, buy what you like the look of, or watched the videos and enjoyed the flying. With a quality airframe it's hard to go wrong, and unless you're really tuned into the specifics of a well refined airframe it's basically splitting hairs. If you like a plane to look like a full size plane, then you'll get an Extra or a Slick (Slicks are available in a smaller size again and are amazing all-rounders)... if you want a plane that doesn't care about looking like a full size plane you can play with a patternship hybrid that simply outclasses the rest at higher speeds. |
Jul 11, 2011, 05:48 PM | |||
+1 for the vyper.
and a shameless video plug. this is the 65 but there is nothing happening that the 48 couldn't do:
oh and no superlatives |
Jul 13, 2011, 12:53 PM | |
Thank you for all the help of deciphering the information.
I haven't made a final decision, but I can say that there are two definite front runners. It will basically boil down to Service, Price, & Features. I know many will usually list the pricing as first and foremost, but I am "Old school" when it comes to customer service, and the "Warm fuzzy feeling" of a vendor you trust still means a lot to me. Complete pricing is second most important, such as what is the bottom line for outfitting a model with the manufacturers recommended equipment. Features in this instance seem to be inline with one another so either way I feel as if I cannot go wrong. Oh the decisions. |
Jul 13, 2011, 12:54 PM | |
I own the 65" Vyper and the Extreme Flight 48" Edge. They are both superb planes, both can fly precision and 3-D very well. I can't compare them against each other since they are different sizes and its like comparing apples to oranges. But, I take them both to the field for each flying session. I've owned the previous generation of 'pure 3D' planes and the Vyper and Edge beat them all in terms of stability across a wide speed range. I'd say get whatever looks cooler to you, you really can't go wrong.
Thread Tools | |
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subset: commoncrawl


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Location: Libertyville, IL | Tickets: 0 | RSVP Tweet
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Austin's Fuel Room Libertyville, IL
9:30 Club, Washington, D.C. Mike Danko for the 9:30 Club
December 26, 2012 |
Verizon Wireless Music Center, Noblesville, Ind. Estill Robinson
June 5, 2010 |
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Introducing leggings. Step into a world of stunning designs.
Wonderful clarity in the water and the reflection under the bridge is impressive as well!
Thank you Stephen. I know its not the greatest composition. I have had the itch to shoot but havent been able to get far from the house since we have had the new baby so I just make do.
– Walter Strength


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Hotel Alton HampshireUpper Neatham Mill FarmTelephone: 01420 542908 Guest House Hampshire, Bed and Breakfast Home |
Bed and Breakfast, Hotel Alton Hampshire, Converted Barn.
4 star silver award winning, Quality hotel accommodation in Holybourne, near Alton Hants England. 1 mile from Alton centre, main railway station and the watercress line steam train. |
Accommodation Alton Hampshire Breakfast Room and Menu.
Relax in our impressive 17th century oak beamed breakfast room, with freshly cooked breakfast and evening snack menu. |
Hotel near Alton Hampshire Customer Reviews and Availability. |
All bed and breakfast rooms are non-smoking. |


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Queensland Collection Kuma is a wool & acrylic blend yarn in a super bulky weight. Kuma is a single-ply yarn in marled colors that are self-striping. This yarn knits up super-fast - it's great for quick projects! Made in Romania
Reviewed by 1 customer
Displaying review 1
(4 of 4 customers found this review helpful)
Soft and Comfortable
By Honey Doll
from Stamford, CT
Best Uses
I bought this yarn to make a sweater vest. It's quick and easy to knit and feels nice in your hands. I love the finished vest. It's light, fluffy, warm and soft. I left it on my bed and my cat fell in love with it. She purred and pawed it and slept on it. I guess it's hers now. I am buying more for another vest and a blanket for Gracie.
Bottom Line Yes, I would recommend this to a friend
(4 of 4 customers found this review helpful)
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Stay up to date with the newest releases and additions to our theatre. Click on a box cover to view scenes and details. |
Mark Zebro is more than just your average European twink with a massive uncut cock. He's one of the few performers to be featured in gay, straight and bisexual porn scenes. His passion for getting off truly knows no limits.
Like most Euro stars, Mark Zebro has done his fair share of condom-free movies for the leading bareback studios in Europe. On screen he has mainly performed as a top but has been known to open his tight twink cheeks for the right partner. No matter what scene he shoots, he approaches every encounter with an animalistic passion that has earned him many loyal fans. Mark considers himself bisexual but with a stronger preference for sex with guys, especially in porn.
Mark currently resides in Germany where he attends University. He loves the German nightlife and enjoys going to the movies with friends.
Mark Zebro Gay Porn Films
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Check Out All of the Hot Young Guys at BoysNation |


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Progressive Spirituality
Music, poetry, art, liturgy, food, justice, and peace.
Wednesday, December 24, 2014
Best Movies of 2014
1. Boyhood
2. Interstellar
3. The Lego Movie
4. Under The Skin
5. The Skeleton Twins
6. Citizenfour
7. Selma
8. Gloria
9. Wild
10. X-Men: Days of Future Past
Tuesday, December 23, 2014
Best Albums of 2014
1. U2 - Songs Innocence
2. Bruce Springsteen - High Hopes
3. The Black Keys - Turn Blue
4. Foo Fighters - Sonic Highways
5. Prince - Art Official Age
6. Gangstagrass - Broken Hearts & Stolen Money
7. Hurray for the Riff Raff - Small Town Heroes
8. Common - Nobody's Smiling
9. Postmodern Jukebox - Twist Is The New Twerk
10. Divina and the Vegabonds - Sunshine
Saturday, December 13, 2014
Some People Say [Fill-In-The-Blank] About You
Sometimes people can do all kinds of mean things to each other in churches, businesses, offices, etc. But one of the simplest yet most aggressive things people do to each other is this statement:
"Some people say [fill-in-the-blank] about you."
It's a classic move. It's also a classless move. But it's much worse when the person who says that statement refuses to identify who the "some people" are. That means the person is trying to imply that there is a group or mass of people people who thinks a certain way without any kind of direct communication or professional accountability. Without the identification of "some people," those statements are a poison in organizations. At best, those statements are nothing more than gossip. At worst, they are abuse. Seriously. Those statements are only meant to cause injury. And they must be stopped immediately. If the person who makes such statements refuses to identify the "some people," then it's important to say something like:
"I hope those people will speak with me directly so we can resolve this situation professionally. Otherwise, I'm going to have to assume that it's not a big enough issue to explore at this time. Is there anything else I can do for you?"
That's it. The end. There is nothing more that should be discussed with that person. Well...other than showing them to the door. Then talk to a trusted friend or colleague to process the attack that was just encountered. Plus it might help to go play a round of golf, go for a long jog, or go lift weights. Anyone who encounters such an attack deserves to do something fun!
Saturday, December 6, 2014
Mary: Society's Nobody Yet God's Chosen
Mary, the mother of Jesus, was a poor, faceless, nameless woman. She was Eric Garner's devastated
. She was Michael Brown's grieving
. She was
Dulce Cristina Payan
before she was murdered by a gang. She was
Malala Yousafzai
on the day she was shot by the Taliban for going to school. She was the
who was repeatedly assaulted by a prison guard who was supposed to protect her. Mary was every woman who has experienced pain, oppression, and injustice. It for this reason that Mary was chosen by God for a sacred mission. And after Mary was chosen, she sang this song (Luke 1:46-55):
Thursday, October 9, 2014
Lord's Prayer for Ferguson
Our Mother, Your abiding presence is on the streets of Ferguson and around the world.
May your tears of pain be blessed with an ever-flowing stream of justice.
May Your vision of Your Kin-dom fill our neighborhoods so we all can embody Your Beloved Community.
May Your will be done through our feet, hands, and words as it's done in Heaven.
Give us today a thirst for justice and a hunger for peace so we can all enjoy the goodness of Your Creation.
Forgive us for our moments of inaction as we forgive those who have perverted justice.
Lead us not into the temptation of analysis paralysis.
And deliver us from the evil of apathy so we can work to build better communities.
May all the power and glory be Yours as Your salvation spreads throughout our streets, homes, and hearts.
The "Don't Shoot Jesus" artwork is from the cover of the
Hands Up Worship resource
Saturday, July 19, 2014
Tribute to Malaysia Airlines Flight 17 (MH17)
Malaysia Airlines Flight 17
was shot down by terrorists. This is a sad tragedy. And an attack on people from many different nations. Instead of offering empty platitudes, it's important to share honest words. Some truly honest words about pain comes from
Psalm 13
. In our perilous yet hopeful world, it's helpful to reflect on such honest words. Here's a song and video that we've put together that highlight those words:
Tuesday, July 8, 2014
Prayer for Simple Pleasures
Gracious God, encourage us to mindfully appreciate the simple gifts of life. Help us to notice beautiful flowers all around us. Help us to savor the taste of good food and drink. Help us cherish the joyful sound of children laughing. Help us to be fully present with our loved ones. Help us to bask in the kindness of others. Help us to meditate on beautiful sunsets and sunrises. Help us to enjoy the music that birds make while singing. Help us to honor the goodness within us. And help us to be mindful of the miracles of life in countless other ways, too. May those who feel hurried, find peace. May those who feel peaceful, encourage others. And may we all fully enjoy the simple pleasures all around us each day. Amen.
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Wayfair grows sales more than 63% in 2014
But losses mount for the home furnishings e-retailer that went public in October.
Web technology remixes in new ways that promise to dramatically change the customer experience.
A couple has been searching for a dining room set, a key purchase for their new home. Going to a retailer's web site, they initiate "co-browsing" of the product page that displays the leading contender, inviting the wife's sister and the couple's decorator for a live session during which all parties explore product features, color options and combinations with different chairs simultaneously in a shared, real-time view. With every opinion that counts represented right there in the same session, the couple closes the deal on the spot and the retailer racks up the sale online.
Mainstream retailers are not offering this type of online shopping scenario today, but the ability to do so is closer than one may think-the technology needed to enable such exchanges between shoppers and merchants already exists.
As online retailing moves deeper into its second decade, astute merchants are past launching wow-factor applications simply because they can. Today, potential new shopping applications that rival anything consumers have seen in the online gaming world or on a movie screen are, in effect, waiting in the wings. But those new applications that actually make it onto retailer sites-including, likely in the near future, the one described above-walk a fine line. They must incorporate enough innovation to keep the experience continually fresh, engaging and above all useful to consumers, without moving ahead of consumers' willingness or ability to accept new shopping tools and patterns.
The shopping tools some retailers will roll out this year walk that line, designers and developers say, in many cases using new combinations of existing technology, and little-used technology now more widely compatible with a new generation of web browsers. "Clients come to us with business problems, such as different target segments they want to go after," says Chris Gokiert, COO of interactive agency and web design and development firm Critical Mass. "We spend time on what different customers are looking for before we even start to decide what technology we are going to use."
Online marketing is buzzing about Web 2.0, social networking, AJAX and AJAX-like technologies. How marketers will attempt to capitalize on those trends and utilities over the near term is all about trying to make them pay; in softer benefits such as brand differentiation and direct ones such as increased conversion.
For years marketers have talked about replicating the offline experience online. The new crop of online shopping tools gets even closer to it. Fry Inc. is in development on several concepts that further narrow the gap between how customers shop for clothing in a retail store and how they shop the same category online. For example, to shop an apparel or department store in the bricks-and-mortar world is to walk among the racks, grab a pair of jeans here and a scarf or blouse there, and head for the dressing room with the gathered loot. But online, shoppers are forced to stay within one category at a time.
To free shoppers from having to skip between categories and refresh pages in the course of assembling an outfit, Fry's concept arranges navigation and product presentation to enable shoppers to move among categories in a continuous scroll format, giving them the ability to view all the products they want across categories in a quicker manner.
Another concept looks to streamline the decision process by giving online shoppers the ability to round up multiple elements of an outfit and drag them visually into a sort of holding pen as they shop. Currently, putting items in the shopping cart is the most common way for online shoppers to save items for later consideration, and adding them to a cart requires shoppers to select a size, color or other specs at that time.
"But adding an item to the cart doesn't necessarily mean that the shopper is going to purchase it," says Fry senior strategic analyst Dayna Bateman. "They may add it to their cart, but then they may be going somewhere else to comparison shop. This differentiates the purposes for which users are adding to a cart." The online feature, with the working name "the rack," would always be present on the screen as a collection of product images that lets users add, subtract and compare. Additional product detail could appear over each item as shoppers mouse over it in the rack.
"You like this blue shirt and this green sweater. You can just drag them all into the rack, and once you get there you can start making choices. You don't have to go somewhere else to check price or size or availability because you can do it all from that area," Bateman says.
Dragging apparel
Another concept in development at Fry addresses the reality that virtual figures or body shapes for trying on clothing online never truly reflect what people really look like. This new concept takes a different approach to online wardrobing, with the goal of depicting color and style combinations interactively rather than attempting to show how a garment would look on a mock-up of the shopper's figure. It enables users to drag different items of apparel from different categories and arrange them in different ways: for example, dragging a greatly magnified detail such as embroidery on a skirt next to a jacket to see how closely the two colors correspond.
This concept, which goes by the working name of "the outfitter," uses portable network graphics (PNG) images, which have greater transparency than JPG or GIF images. That enables product image overlays such as a blouse overlapping a skirt. PNG files have been in existence for some time but haven't been used often in retail applications because they were not supported by most web browsers. However, they're now supported across the current iterations of Microsoft Internet Explorer as well as backwards-compatible with the last few generations of IE because of the addition of new code.
Dan Schulman doesn't name potential partners for the payment processing unit.
The eyeglass chain that started as an online retailer has potential investors anticipating growth and ...
Executives at the 2015 GSMA Mobile World Congress in Barcelona discuss how they use mobile ...
But losses mount for the home furnishings e-retailer that went public in October.
Home Depot added $1 billion in web sales in 2014, and e-commerce accounted for 23% ...
Women's clothing brand Roman Originals has been inundated by calls since the photo became the ...
The high-end fashion retailer is piloting beacons in three stores, using the mobile technology to ...
Online sales grew 28% for the 2014 fiscal year ended Jan. 31 and 31% during ...
Criminals know how to exploit Internet vulnerabilities to penetrate retailer's networks. Here are some insights ...
Despite the political conflict in the Ukraine, there remain big opportunities for Western brands to ...
If there's something you've bought offline that you weren't able to buy online, we're probably thinking about that.


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Home >
- Dhb Ladies Merino L/S Zip Neck Baselayer M_190
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Add dhb Ladies Merino L/S Zip Neck Baselayer M_190 to your basket now
Fuchsia | UK 8 |
Grey | UK 8 |
Fuchsia | UK 10 |
Grey | UK 10 |
Fuchsia | UK 12 |
Grey | UK 12 |
Fuchsia | UK 14 |
Grey | UK 14 |
Fuchsia | UK 16 |
Grey | UK 16 |
This ultra fine merino wool is comfortable and smooth next to the skin.
Top Features of the dhb Ladies Merino L/S Zip Neck Baselayer M_190
- Outstanding all round thermal management
- Next to skin, slim fitting
- Flat lock seams for comfort
- Ultra fine 18.5 micron merino yarn, smooth and comfortable against your skin
- Low odour
- Naturally repels water
Product Data
MTB: | Yes |
Road: | Yes |
Fit: | Regular Fit |
This version of our popular Merino range is available with a zip neck to increase ventilation when the going gets hot. Due to the increased neck coverage it allows the rider to remain warmer in lower temperatures due to blocking out those annoying gaps that the coldest wind seems able to find. Due to the fact it is available in 150 and 190 gsm it will allow you to run with the same style all the way through from October till March. Due to the low volume and ultra close comfortable fit you could combine a 150 and 190 together to form a formidable partnership for the colder months, whether you decide to use another zip neck or a crew version. You never see a cold sheep so you can be assured that you will keep warm in cold weathers and any moisture retained in the garment will not leave your skin cold or damp, pretty clever stuff really this Merino fabric from Mother Nature. Available in this seasons dark, natural charcoal.
Washing/Care Information
For further information click here
About the dhb brand
dhb is a technical sports apparel brand, founded in Hampshire, UK, in 2004. We are passionate about the exhilaration of being outside and enjoying sport. Our cycling and running collections are designed for all levels of participant - from novice to professional. We believe 'there's no such thing as bad weather', which is why we aim to provide a wide range of products from a 2.5 layer waterproof jacket to a 90g racing jersey, to keep you outside, doing what you love, all year round.
At dhb, our in-house design & development team in London work with global partners who are experts in manufacturing, materials and technology to deliver the highest quality products. We strive to create stylish and durable apparel that allows our users to forget about gear and focus on their sport.
We are proud to support our sportsmen and women across the world. dhb sponsorships include:
- Official Cycle Clothing supplier for Prudential RideLondon
- Official Team Kit and Clothing supplier to the Wiggle Honda Pro Cycling team
- Nettie Edmondson (Track Cycling World Champion) Omnium & Team Pursuit
- Peta Mullens (National MTB XCE Champion - Australia)
dhb are proud to have won Clothing Brand of the Year at the Total Women's Cycling Awards 2015, voted for by their fans.
Chest | cm | 72cm | 80cm | 88cm | 96cm | 104cm |
Waist | cm | 54cm | 62cm | 70cm | 78cm | 86cm |
Hips | cm | 82cm | 90cm | 98cm | 106cm | 114cm |
Height | cm | 168cm | 168cm | 170cm | 172cm | 174cm |
Chest | inches | 281⁄2″ | 311⁄2″ | 341⁄2″ | 38″ | 41″ |
Waist | inches | 211⁄2″ | 241⁄2″ | 271⁄2″ | 301⁄2″ | 34″ |
Hips | inches | 321⁄2″ | 351⁄2″ | 381⁄2″ | 411⁄2″ | 45″ |
Height | ft | 5′ 6″ | 5′ 6″ | 5′ 7″ | 5′ 8″ | 5′ 9″ |
dhb Slim Fit
dhb slim fit clothing is cut for an anatomic fit; the garments sit closely against the skin to provide efficient moisture transfer and improved aerodynamics without restriction or excess fabric. Slim Fit offers the perfect balance of performance and comfort for training, club and sportive riding.
Delivery Information
We are sorry, but due to your delivery destination USA we can not dispatch this item.
International Delivery
Wiggle ships to over 100 countries. To see what delivery options are available for other destinations you can update your delivery destination via the International Options feature at the top right of the website.
Goods are shipped from the UK. Does not include delivery charges, local taxes or import duties, if applicable.
More information on International delivery options
Returns Information
We will happily refund or exchange any item purchased on Wiggle if returned to us within 365 days, excluding Wiggle gift vouchers and personalized products except when faulty.
Returned goods must be unused and supplied with their original packaging, unless the goods are faulty.
Wiggle will pay the return postage costs for any faulty items.
More information on Wiggle's return policy
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Monthly Book Club | 20 & 30-Something Book Club
Book Club in a Bag | Title Swap | Register Your Book Club
Books are available at the Circulation Desk one month before each program.
Free. No registration required.
Check here for booklists and library events planned for 20 & 30-something readers like you.
This program is open to any 20-something/30-something looking for a great book discussion. No registration is required and the program is free. Non-Syosset residents are welcome. Copies of the book will be available at the Readers' Services Desk on the 2nd floor one month prior to the event. Please call 516-921-7161 ext. 239 for details. The discussion will be led by 20-Something Librarians Jackie Ranaldo and Jessikah Chautin. Look forward to seeing you there!
By Maria Semple
With Stacey Levine, Readers' Services Librarian, Jessikah Chautin, Children's Librarian
Monday, March 16, 2015. 7 PM.2013 Alex Award Winner When her notorious, hilarious, volatile, talented, troubled, and agoraphobic mother goes missing, teenage Bee begins a trip that takes her to the ends of the earth to find her. |
By Jeff VanderMeer
With Stacey Levine, Readers' Services Librarian
Monday, May 18, 2015. 7 PM.Area X has claimed the lives of members of eleven expeditions. The twelfth expedition consisting of four women hopes to map the terrain and collect specimens, to record all their observations and, above all, to avoid being contaminated by Area X itself. |
Previous 20 & 30-Something Title Swaps
20 & 30-Something Facebook
Become a Fan: Syosset Public Library 20-Something Book Club
Check out our Facebook page for upcoming events, reading suggestions, and book lists. Become a fan and post your own favorite reads. Join the Syosset Public Library 20-Something Facebook page… It's not your mother's book club!


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US 5369041 A Abstract A semiconductor controlled rectifier is disclosed herein. In a preferred embodiment, a first n-doped region 112 is formed in a p-doped semiconductor layer 126. A first n-well region 122 is formed within the first doped region 112. This well 122 extends through the region 112 and into the layer 126. A second n-doped region 114 is also formed in the layer 126. The second region 1114 is spaced from the first region 112. A second n-well 142 is formed in the layer 126 such that it partially overlaps the second region 114. A n-doped region 144 and a p-doped region 146 are each formed in the second n-well 142 and abut one another.
Claims(10) 1. A method of forming a semiconductor controlled rectifier, comprising the steps of:
providing a semiconductor region of a first conductivity type; forming a first doped region within said semiconductor region, said doped region having a first doping concentration of a second conductivity type opposite said first conductivity type; forming a first well region of said second conductivity type within said semiconductor region, said first well region extending through said first doped region into said semiconductor region, said first well region having a doping concentration less than said first doping concentration; forming a contact pad on said first doped region above said first well region; forming a second well region within said semiconductor region and spaced from said first doped region; and forming second and third doped regions within said second well region, said second doped region of a conductivity type opposite that of said third doped region. 2. The method of claim 1 and further comprising the step of forming a fourth doped region in said semiconductor layer between said first doped region and said second well region.
3. The method of claim 2 and further comprising the step of forming a conductive region adjacent said semiconductor region between said first and fourth doped regions.
4. The method of claim 1 wherein said first conductivity type comprises a p-doped material and said second conductivity type comprises an n-doped material.
5. The method of claim 1 wherein said step of forming a first well region comprises implanting dopants.
6. The method of claim 1 wherein said first doped region extends a first depth from the surface of said semiconductor region and said first well region extends a second depth from the surface of said semiconductor region, said second depth five to seven times the depth of said first depth.
7. The method of claim 1 wherein said semiconductor comprises silicon.
8. A method of forming a semiconductor controlled rectifier, comprising the steps of:
forming a conductive region adjacent a p-type semiconductor region; forming first and second n+ regions within said p-type semiconductor region adjacent said conductive region, said n+ regions having a first doping concentration; implanting a first n-well within said first n+ region, said first n-well extending through said first n+ region into said semiconductor region, said first n-well having a doping concentration less than said first doping concentration; forming a contact pad on said first source-drain region above said first n-well; forming a second n-well region within said semiconductor region and partially overlapping said second doped region; and forming a third n+ region and a p+ region within said second n-well region, said third n+ region abutting said p+ region. 9. The method of claim 8 wherein said conductive region comprises aluminum.
10. The method of claim 8 wherein said conductive region comprises polysilicon.
Description The following co-assigned patent applications are hereby incorporated herein by reference: ______________________________________Serial No. Filing Date TI Case No. Patent No. Issue Date______________________________________07/213,499 6/27/88 TI-11444B 5,012,317 4/30/9107/434,592 11/13/89 TI-13141A 4,939,616 7/03/9007/488,590 3/05/90 TI-14246 abandoned07/808,826 12/17/91 TI-16108 5,221,635 6/22/9308/042,849 4/05/93 TI-14912B abandoned______________________________________ This invention generally relates to the fabrication of semiconductor devices and specifically to a silicon controlled rectifier (SCR) device and a method of forming this device. Integrated circuits are vulnerable to a phenomenon generically referred to as electrostatic discharge ("ESD"). During handling, integrated circuits can build up relatively large static charges on their inputs. These charges, if not properly compensated for, may flow or "discharge" to a lower potential region. Discharging in this way produces large electric fields within the transistors that are immediately connected to the various inputs and outputs of a particular circuit. High electric fields in turn, produce high temperature gradients and ultimately yield electrothermo migration ("ETM") within the transistor. ETM describes how a transistor fails when the contact metallization migrates across the transistor under the combined effects of electrical and thermal stress to produce a short. ETM causes irreversible circuit failures. ESD and ETM become more severe as circuits dimensions decrease. The smaller the dimension of, for instance, a doped drain region, the higher the electric field will be per charge. As a result, new semiconductor technologies require more effective designs to overcome these problems. Other objects and advantages will be obvious, and will in part appear hereinafter and will be accomplished by the present invention which provides a method and deuce for circuit protection with a silicon controlled rectifier. A silicon controlled rectifier is disclosed herein. In a preferred embodiment, a first n-doped region is formed in a p-doped semiconductor layer. A first n-well region is formed within the first n-doped region. This well extends through the region and into the layer and may extend outside one end of the n-doped region. A second n-well is formed in the layer and an n-doped and a p-doped region are each formed in the second n-well. These regions may abut one another. In one embodiment, a second n-doped region is also formed in the layer and is spaced from the first n-doped region. This region may be formed such that it partially overlaps the second region. In yet another embodiment, a conductive gate insulatively overlies the semiconductor layer between the first and second doped regions. The above features of the present invention will be more clearly understood from consideration of the following descriptions in connection with accompanying drawings in which: FIG. 1 depicts in planar view a transistor made according to the preferred embodiment of the present invention; FIG. 2 depicts a cross sectional view taken along line 2--2 of FIG. 1; FIG. 3 depicts in planar view of a transistor according to an alternative embodiment of the present invention; FIG. 4 depicts a cross sectional view taken along line 4--4 of FIG. 3: FIG. 5 depicts a cross sectional view of a thin oxide transistor; FIG. 6 depicts a cross sectional view of a transistor according to an alternative embodiment of the present invention; FIG. 7 depicts a cross sectional view of a first embodiment silicon controlled rectifier; FIG. 8 depicts a cross sectional view of a modified version of the embodiment of FIG. 7; FIG. 9 depicts a cross sectional view of an SCR which illustrates the insulating regions which may be formed on the device; FIG. 10 depicts a cross sectional view of a second embodiment silicon controlled rectifier; FIG. 11 depicts a schematic of the parasitic effects which may operate during use of the present invention; FIG. 12a depicts a cross sectional view of a third embodiment silicon controlled rectifier and FIG. 12b depicts a planar view of this embodiment; and FIGS. 13a-13c depict cross-sectional views of various stages of the fabrication of the embodiment of FIG. 12a. The making and use of the presently preferred embodiments are discussed below in detail. However, it should be appreciated that the present invention provides many applicable inventive concepts which can be embodied in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative of specific ways to make and use the invention, and do not delimit the scope of the invention. U.S. Pat. No. 5,221,635 (TI-16108) issued to Charvaka Duvvury on Jun. 22, 1993 describes a novel field effect transistor. The present invention describes a circuit and structure which may utilize a transistor as described in the co-assigned patent. Accordingly, the transistor will be described herein followed by a description of the silicon controlled rectifier (SCR) which may utilize the transistor. Variations of the SCR are also described. FIG. 1 depicts generally a planar view of a metal oxide semiconductor field-effect transistor 10 ("MOSFET") wherein a second n region provides improved ESD performance. In a preferred embodiment, MOSFET 10 has a first n-type source-drain region 12 and a second n-type source-drain region 14. Each region is either doped or implanted into a p-type substrate. An insulator 24 (depicted in FIG. 2) separates metal gate 16 from the underlying p-substrate 26. Contact pads 18 and 20 supply or remove electric current from doped regions 12 and 14 respectively. Pads 18 and 20 are typically exposed subregions of regions 12 and 14 and permit an ohmic contact to other components (not depicted). First source/drain region 12 also contains an n-well 22 below each of the contact pads 18 or, a single n-well 22 may be used to cover all the contacts. As will be described below, each n-well 22 increases the ESD performance of MOSFET 10. Conductive gate 16 controls the flow of current between regions 12 and 14 by creating an electric field between the two regions. An electric field causes a channel to form in the substrate between regions 12 and 14 and below the gate insulating layer. The conductive gate 16 may comprise a metal such as aluminum. FIG. 2 depicts a cross-sectional view of MOSFET 10 along line 2--2 of FIG. 1 that shows the vertical integration of n-well 22 and first source-drain region 12. In addition, insulating layer 24 separates gate 16 from substrate 26. Substrate 26 includes a p-type semiconductor material, while regions 12 and 14 are more heavily doped ("n+") with n-type impurities. A lower concentration of n-type impurities than either region 12 or 14 dopes n-well 22. Typically, the concentration of n carriers is 1019 atoms/cm3 in regions 12 and 14. Transistor 10 naturally forms two p-n junctions that act as diodes. One of these, the junction between region 12 and substrate 26, may act as a barrier to the discharge of positive electrostatic charge from contact 18 to the ground plane through substrate 26. ESD from contact 20 is not a concern for positive polarity stress since, region 14 electrically connects to substrate 26 through the ground plane. Also, it is not a concern for negative polarity stress for grounded substrate technologies. However, the barrier between region 12 and substrate 26 limits the ESD characteristics of region 12 in previous transistors. There are several desirable characteristics for the transistor of FIGS. 1 and 2. A low resistance is desired between contacts 18 and 20 and a low capacitance at regions 12 and 22. In addition, a low avalanche (breakdown) voltage is desired at the perimeter of source/drain region 12. Also, it is desirable to have a high avalanche threshold under region 18. The n-well region 22 will help to increase the avalanche threshold under region 18. It is further expected that the avalanche voltage at the perimeter of source/drain region 12 will not be affected. The resistance between the contacts 18 and 20 and the capacitance at regions 12 and 22 should not be affected unless inclusion of the n-well 22 increases the feature size. According to the preferred embodiment, a well of lightly doped n-type carriers below contact 18 in region 12 improves ESD performance without substantially increasing system resistance or capacitance. Lightly doping a region below contact 18, increases the breakdown voltage between region 22 and substrate 26 to between 40 and 50 volts. The region 22 should have no effect on transistor breakdown voltage which is determined by the interface of regions 12 and 26. Typically, the size of the contact pad 18 helps determine the size of n-well 22. The footprint of the n-well should be generally the same size or larger than the footprint of the contact pad 18. Present semiconductor processes, however, may fabricate contact pads 18 substantially smaller than n-well 22. In particular, present technology limits the size of n-well 22 to approximately 6�6 μm2, while contact pad 18 may be approximately 1.5�1.5 μm2. N-well 22 must extend below the bottom of the overlying source-drain region 12. N-well 22 preferably extends to a total depth of five to seven times the depth of region 12. The n-well 22 may extend beyond the boundary of region 12 and under insulator 28 without adversely effecting the device performance (as shown in FIG. 6). It is desirable, however, that the n-well 22 not extend to the insulator 28. In other words, it is desirable that the source/drain region 12 abut the substrate 26 at the channel junction. N-well 22 has little or no effect on the performance of MOSFET 10. This is because the high resistive n-well is not in the direct current path from source to drain. The depth of n-well 22 therefore ranges from 1 to 2 μm for typical 0.5 μm processes. Transistor 10 may be fabricated from a combination of photolithographic processes according to known methods. The following discussion, describes an example of one possible process flow. Transistor 10 begins with a p-type semiconductor substrate, preferably a p-type silicon substrate 26. Substrate 26 is then masked such that only the surface of substrate 26 where the n-well 22 will be formed is exposed. The n-well 22 is then formed preferably by an implantation followed by an anneal step which drives in the dopants. Next the surface of the semiconductor layer 26 where the regions 12 and 14 will be formed are covered with a mask, preferably a nitride. Field oxide regions 28 and 30 as well as insulating layer 24 are formed in accordance with well-known processes utilized to prove device-to-device isolation. In particular, regions 28 and 30 may be formed by the local-oxidation-of-silicon ("LOCOS") or the poly-buffered LOCOS process ("PBL"). The remaining mask is then removed. The entire workpiece is covered with 5,000 to 10,000 Angstroms of aluminum to form gate 16. The unwanted aluminum will be removed with the underlying photoresist layer when the resist layer is removed. The substrate at this point then acts as a self-aligned implant mask for regions 12 and 14. The heavily doped source-drain regions 12 and 14 are implanted with an n-type species such as arsenic, phosphorus, or antimony. In a preferred embodiment, the implantation is performed at about 100 keV at a dose of about 1E15 atoms/cm2. Following the implantation, a rapid thermal anneal ("RTA") or furnace anneal process may be performed. The RTA process is preferably performed at about 1,000� C. for about 30 seconds. Furnace annealing may be instead used at, for instance, about 900� C. for about one hour. The resulting n+ regions are approximately 0.5 μm deep and have a resistivity of approximately 25 to 30 ohms/sq. In alternate embodiment fabrication process, a third mask is then applied to obscure all of region 12 except the central area around the future site of each contact pad. A lighter dose of the same species is then implanted to form n-well 22 to a depth of approximately 1 micron. The second implantation step may be accomplished with an implant energy of 150 keV and a dose of 1E13 atoms/cm2. This results in an n-type region having a resistivity of approximately 1500 Ohms/sq. The third photoresist layer may then be removed. FET 10 is completed by applying another mask, exposing contact pads 18 on regions 12 and 14, depositing an interconnect layer, and patterning the layer to connect FET 10 to other elements on substrate 26. FIGS. 3 and 4 depict a second embodiment of the disclosed invention for use with floating substrate technology MOSFETs. NMOS FET 32 differs from the transistor depicted in FIGS. 1 and 2 in that source drain region 14 is not connected to substrate 26. Electrostatic discharge may therefore occur under certain circumstances between second region 14 and substrate 26 for negative polarity stress. In such a case, it is advantageous to place a second n-well 34 to protect transistor 32 more completely. N-well 34 is constructed using the same techniques as described above. Although the disclosed invention is described in connection with an abrupt junction thick-field NMOS FET, its scope should not be limited to such devices. The disclosed invention is applicable to other technologies including those transistors fabricated with lightly doped drains, double diffused drains and with thin oxide or polysilicon gate transistors. FIG. 5, for example, illustrates a thin gate oxide transistor. During fabrication, the gate oxide 24 is preferably deposited subsequent to forming the field insulating regions 28 and 30 but prior to implanting the source/drain regions 12 and 14. The gate layer may then be deposited followed by a stack etch. As previously mentioned, the gate 16 may comprise a metal such as aluminum or a semiconductor such as polysilicon. Another embodiment transistor 10 is illustrated in FIG. 6. In this embodiment, the n-well 22 extends below the source/drain region 12 and under field insulating region 28. This embodiment may be preferable to minimize the required feature size of the device. In other words, if the n-well 22 is to be completely beneath the source/drain region 12, it is likely the source/drain region 12 will have to be larger than the minimum feature size. It should be noted, however, that it is preferable that the well region 22 not extend to the junction between source/drain region 12 and the semiconductor layer 26 beneath insulating region 24. This is because it is desirable to have a low avalanche (breakdown) voltage at the perimeter of region 12. Referring now to FIG. 7, a first embodiment silicon controlled rectifier (SCR) 140 is illustrated in cross-sectional view. The SCR 140 is sometimes referred to as a modified lateral SCR (MLSCR). The SCR 140 is fabricated on a semiconductor substrate 126. The semiconductor substrate 126 preferably comprises silicon but other semiconductors such as germanium or gallium arsenide may also be used. As illustrated in FIG. 7, the SCR device 140 may be fabricated directly in the semiconductor substrate. Alternatively, the device 140 may be fabricated in a structure on the substrate. As examples, the layer 126 may comprise an expitaxial layer formed on a substrate, a well (or tub or tank) formed within a substrate, a semiconductor on insulator (SOI) or a combination of these. Therefore, the substrate 126 will be referred to more generally as a semiconductor layer 126. Doped regions 112 and 114 are formed in the surface of layer 126 and are separated by insulating region 124. In the preferred embodiment, doped regions 112 and 114 comprise n-doped silicon regions and insulating region 124 comprises an oxide such as silicon dioxide. Another doped region 122 is formed within region 112 and extends below region 112 and into semiconductor layer 126. The region 122 is formed so that it surrounds the contact 118. Accordingly, the size of the contact pad 118 will typically determine the size of the n-well 122. As before, the footprint of the n-well 122 should be generally the same size or larger than the footprint of the contact pad 118. Present semiconductor processes, however, may fabricate contact pads 118 substantially smaller than n-well 122. For example, present technology limits the size of n-well 122 to approximately 6�6 μm2, while contact pad 118 may be approximately 1.5�1.5 μm2. N-well 122 almost always extends below the bottom of the overlying doped region 112. N-well 122 preferably extends to a total depth of five to seven times the depth of region 112. N-well 122 within region 118 has little or no effect on the performance of the device. The depth of n-well 122 therefore ranges from 1 to 2 μm for typical 0.5 μm processes. A conductive region 116 is formed overlying insulating region 124. Conductive region 116 may comprise a metal such as aluminum or a semiconductor such as doped polysilicon. A well region 142 is also formed in semiconductor layer 126. The well region 142 typically overlaps the doped region 114. In the preferred embodiment, the well region comprises n-doped silicon. N-doped region 144 and p-doped region 146 are formed in well region 142. In the preferred embodiment, the doped regions 144 and 146 comprise silicon which is more heavily doped than the well region 142. The regions 144 and 146 may abut each other but do not need to. For the n-doped regions, dopants such as arsenic or phosphorus are preferably used but other dopants such as antimony may also be used. For the p-doped regions, boron is the preferred dopant but other dopants such as aluminum or gallium may be used. Combinations of various dopants may also be used. In a preferred embodiment, doped regions 144 and 146 are electrically coupled together along with conductive region 116. This connection is illustrated in FIG. 7. In ESD protection applications, the regions 144, 146 and 116 may be coupled to an input/output pad for which ESD protection is desirable. The structure of FIG. 7 may be modified in a number of ways. As previously noted, the doped regions 144 and 146 do not necessarily abut one another. In addition, the insulator 124 may be a deposited insulator such as an oxide. If a thin insulator is used, the device is sometimes referred to as a low voltage triggered SCR (LVTSCR). Also, the region 122 may extend beyond the doped region 112 on a side opposite the insulator 124. Each of the variations is illustrated in the embodiment of FIG. 8. It should be noted, however, that only some of the features need be incorporated in a given design if so desired. Referring now to FIG. 9, a more detailed cross-sectional diagram of an embodiment SCR is illustrated. Insulating regions 128, 129 and 130 preferably comprise thermally grown thick oxide regions. A second insulating layer 131 is formed over the structure and contact holes are formed therein. Conductive contacts 150, 151 and 152 are formed in the contact holes. In the preferred embodiment, the insulating layer 131 comprises a deposited oxide such as silicon dioxide or a doped glass such as PSG or BPSG. The conductive contacts preferably comprise a metal such as aluminum. A second embodiment SCR 150 is illustrated in FIG. 10. This embodiment is sometimes referred to as a modified SCR. The structure of the second embodiment SCR 150 is essentially the same as that of the SCR 140 shown in FIG. 7 except the insulating region 124 and conductive region 116 are eliminated. The structure of FIG. 10 is similar to that discussed in U.S. Pat. No. 4,939,616, incorporated herein by reference. In the preferred embodiment, regions 144 and 146 are coupled together. In ESD protection applications, the regions 144 and 146 may be coupled to an input/output pad for which ESD protection is desirable. In addition, the doped region 112 is typically coupled to a reference node (e.g., ground). The SCR devices illustrated in FIGS. 7 and 10 are effective for ESD protection applications. The circuit offers protection as a pnpn device for positive stress and as a large n-/p diode for negative stress for grounded substrate devices. The n+ region 114 is placed on the n-well 142 boundary facing the cathode to form a field oxide 124 triggered SCR (as illustrated in FIG. 10). In the embodiment illustrated in FIG. 7, the conductive gate 116 is placed over the oxide 124 to create a thin oxide triggered SCR. These SCR circuits effectively clamp the input transient to a low holding voltage thus discharging the ESD stress pulse with a low power dissipation. The effectiveness of these SCRs may improve for thicker epitaxial substrates. For negative polarity stress, there is no SCR action, and the protection is given by the n-well 142/p-substrate 126 diode. As illustrated in FIG. 11, a parasitic npn device exists in the SCR structure. This device will tend to turn on under negative stress and cause premature failure or contact damage if well region 122 is not included. However, the structure illustrated in FIGS. 7 and 10 should suppress the contact damage due to avalanching of the contact diode for negative stress in floating substrate devices. In LVTSCR case (illustrated in FIG. 7) without well region 122, the n-/p-substrate diode may not turn on effectively if the epitaxial thickness is relatively large. In this device, the lateral npn (n+ region 112 as collector, substrate 126 as base and n+ region 114 as emitter), may tend to turn on. Similarly, stress would be placed on the reverse n+ 112/substrate diode. Failure analysis performed on devices built without the well region 122 has found that the contacts in the cathode are damaged for this type of stress polarity. On the other hand, with the present invention, many of these problems are eliminated. The technique described herein is especially useful for thick epitaxial processes such as those used for CMOS technologies integrating power MOSFETS. The n-well 122 around the cathode contacts 118 will not introduce resistance to the SCR cathode since in the parallel path the n+ region 112 is substantially less than the n-region 122 sheet resistance. A third embodiment SCR is illustrated in cross-sectional view in FIG. 12a and in plan view in FIG. 12b. A doped region 112 is formed in semiconductor layer 126. A less heavily doped well region 122 is formed extending through doped region 112 and into semiconductor layer 126. A second well region 142 is formed in the semiconductor layer and is spaced from doped region 112. More heavily doped regions 144 and 146 are formed with the second well 142. In the preferred embodiment, the doped regions 144 and 146 are of opposite conductivity types and abut each other. The structure of FIG. 12a can be fabricated with three doping steps as illustrated in FIGS. 13a-13c. First, a mask layer (not shown) is patterned to expose the well regions. The n-wells 122 and 142 are then formed preferably by ion implantation of either arsenic or phosphorus (or both). Alternatively, other doping methods such as diffusion may be used or other dopants. A thin insulating layer (not shown) may be formed over the surface of the semiconductor layer 126 prior to forming the doped regions. The well regions 122 and 142 may be driven in with a relatively high temperature anneal. Referring now to FIG. 13b, insulating regions 128-130 are formed preferably by thermal oxidation as previously discussed. Next more heavily doped regions 112 and 144 are formed. Once again, these regions 112 and 144 are preferably implanted but alternatively may be diffused. A photoresist mask (not shown) may be used to cover the area of region 142 where region 146 will be formed during this doping step. Referring to FIG. 13c, the p region 146 is formed. This region 146 may be implanted. The preferred p-type dopant is boron although other dopants may also (or alternatively) be used. A photoresist mask (not shown) is typically used to cover the areas of the device surface that will not be doped. While this invention has been described with reference to illustrative embodiments, this description is not intended to be construed in a limiting sense. Various modifications and combinations of the illustrative embodiments, as well as other embodiments of the invention, will be apparent to persons skilled in the art upon reference to the description. It is therefore intended that the appended claims encompass any such modifications or embodiments. Patent Citations
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PlantFiles: Arilbred Iris
Iris 'Genetic Artist'
Family: Iridaceae (eye-rid-AY-see-ee) (Info) Genus: Iris (EYE-ris) (Info) Cultivar: Genetic Artist Hybridized by H. Danielson; Year of Registration or Introduction: 1971 One vendor has this plant for sale. 7 members have or want this plant for trade. Class: Height: Spacing: Hardiness: Sun Exposure: Danger: Bloom Color: Bloom Time: Foliage: Other details: Soil pH requirements: Patent Information: Propagation Methods: Seed Collecting: Awards (if applicable): | Click thumbnail to view: By 1913cat By patnjbob By Tntigger By zacattack By daylily970 By Mainecoon By Eileenannie There are a total of 12 photos. |
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This plant has been said to grow in the following regions:
Phoenix, Arizona
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Robertsville, Missouri
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text:
[Hemophagocytic syndrome complicating adult's seropositive rheumatoid arthritis].
Clinique médicale 1, CHU A.-Le-Dantec, Dakar, Sénégal. <>
La Revue de Médecine Interne (Impact Factor: 1.32). 12/2004; 25(11):826-8. Source: PubMed
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ABSTRACT: BACKGROUND: Hemophagocytic lymphohistiocytosis (HLH), is a potentially fatal hyperinflammatory syndrome characterized fever, hepatosplenomegaly, and cytopenias. HLH can be either primary, with a genetic aetiology, or secondary, associated with malignancies, autoimmune diseases, or infections. Among rheumatic disorders, HLH occurs most frequently in systemic juvenile idiopathic arthritis. AIM: To draw attention on this severe syndrome that may often go undiagnosed in patient with rheumatic diseases. MATERIALS AND METHODS: PubMed search was performed by combining the terms (haemophagocytic, haemophagocytosis, hemophagocytosis, hemophagocytic, erythrophagocytosis, macrophage activation syndrome) and (rheumatic, rheumatologic, arthritis, lupus, Sjögren's syndrome, scleroderma, polymyositis, dermatomyositis, polymyalgia rheumatic, mixed connective tissue disease, polychondritis, sarcoidosis, polyarteritis nodosa, Henoch-Schönlein, serum sickness, wegener's granulomatosis, giant cell arteritis, temporal arteritis, Takayasu's arteritis, Behçet's syndrome, Kawasaki, Buerger's). RESULTS: 117 papers describing 421 patients were considered. HLH was described in systemic lupus erythematosus in 94 patients, in Still's disease in 37 patients, in rheumatoid arthritis in 13 patients, in systemic juvenile arthritis in 219 patients, in dermatomyositis in 7 patients, in Kawasaki disease in 25 patients, in systemic sclerosis in 5 patients, in Behcet disease in one patient, in polyarteritis nodosa in 6 patients, in ankylosing spondylitis in 2 patients, in mixed connective tissue disease in one patient, in sarcoidosis in 5 patients, in Sjögren's syndrome in 3 patients, in Wegener's granulomatosis in one patient, and in unclassifiable disorders in two patients. CONCLUSIONS: HLH occurring in the course of rheumatic diseases is an important and often underdiagnosed clinical entity, which can affect prognosis.European review for medical and pharmacological sciences 10/2012; 16(10):1414-1424. · 0.99 Impact Factor - [Show abstract] [Hide abstract]
ABSTRACT: We report a patient with rheumatoid arthritis (RA) who showed bicytopenia with hyperferritinemia and hepatic dysfunction ascribable to hemophagocytic syndrome (HPS) 2 weeks after commencement of bucillamine. Pathology of the bone marrow showing infiltration of macrophages confirmed the diagnosis of HPS. On the basis of renal dysfunction with an increase in fibrin degradation products, disseminated intravascular coagulation was considered to be concurrent with HPS. Oral prednisolone and cyclosporine A were started right after cessation of bucillamine, and yielded complete normalization of hepatic and renal function and hematology. As there was neither disease activity of RA nor associated infection throughout the clinical course, bucillamine was suspected of being the cause of HPS in our patient. HPS is a very rare complication in RA, but should be actively considered when abnormalities in laboratory data, especially pancytopenia and hepatic dysfunction, quickly worsen.Internal Medicine 02/2007; 46(21):1809-13. · 0.97 Impact Factor
Data provided are for informational purposes only. Although carefully collected, accuracy cannot be guaranteed. The impact factor represents a rough estimation of the journal's impact factor and does not reflect the actual current impact factor. Publisher conditions are provided by RoMEO. Differing provisions from the publisher's actual policy or licence agreement may be applicable.


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County Clerk Directory | Mississippi | George
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1929 LP recently purchased through this site:


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Cool: Fridge Without Using Electricity! - Share The Wealth...
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A different astronomy and space science related image is featured each day, along with a brief explanation.
Miniature Earth. What if the population of the world were reduced into a community of only 100 people?
You are looking at pictures of a house I built for our family in Wales. It was built by myself and my father in law with help from passers by and visiting friends. 4 months after starting we were moved in and cosy. I estimate 100...


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expected an exceptional hotel judging by the other reviewers only to be let down. OK hotel, but would not want to stay there again if I can help it. Breakfast pastries, cheeses were so cheap - this is Italy food is supposed to be amazing.
- Reservation Options:
- TripAdvisor is proud to partner with Booking.com, Expedia, Venere, Priceline, Hotels.com and Odigeo so you can book your Hotel Villa Marie reservations with confidence. We help millions of travelers each month to find the perfect hotel for both vacation and business trips, always with the best discounts and special offers.
- Also Known As:
- Marie Hotel Tremezzo
- Hotel Villa Marie Tremezzo, Italy - Lake Como


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AVAD Executive Honored by Lutron Electronics
Extraordinary Sales and Program Implementation Performance Recognized
Van Nuys, Calif. – September 10, 2007 – AVAD, LLC, America's leading distributor of custom home electronics products, announced today that Wayne Ortner, vice president of AVAD metro east, was recognized by Lutron Electronics with a Radio RA Sales Excellence Award for Exemplary Sales Growth and Program Implementation. The award was presented at the annual Lutron AVAD PSP (Preferred System Providers) Reception on Friday, September 7 during the CEDIA Expo in Denver. more


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Archangel (07-11-2010)
is there a mic spammer for MW2 bcuz people like it when i am the DJ of MW2
pressing the mic button many times = mic spam (i guess.)
There is a setting where you can change it so it'll pick up your frequency whenever you talk instead of using a PTT(Push to talk) key.
Steam > Setting > Voicetab > Near the bottom you'll see the jackpot.
Hopefully this helps.
Archangel (07-11-2010)
Need help? PM/VM me!
Want my MSN? PM me!
My things:
Modern warfare 2 server admin tool
CoD1+UO: Wallhack, colored sky, no fog hack.
CoD1+CoDUO wallhack and norecoil
CoD1: Simple wallhack
CoD2: Simple wallhack
CoD4: CFG for more FPS
CoD4: Rapidfire script
CoD4: Texture package V1.1
CoDMW2: Texture compilation
BFBC2: Nametags (Retail)
/moved to help
Shut up, seriousley.
We are not personal slaves who move threads becouse lazy fucks like you think they can post their shit wherever they like.
We are here to watch the forum, and check if everyone is following the rules.
So next time i see a shitty post like this from you, your're getting some time off!
[MPGH]Hell_Demon (07-11-2010), Skyline. (07-11-2010)


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February 20, 2015 What Solutions Do You Think Are Most Critical To Countering Violent Extremism? This week, the White House hosted a Summit to Counter Violent Extremism to highlight domestic and international efforts to prevent… more 176
February 19, 2015 Our Plan for Countering Violent Extremism Show the world the power of peaceful communities, and tackle bad governance that breeds frustration. Throughout our history, we have… more 9
February 18, 2015 Expanding Information Sharing to Counter Foreign Terrorist Fighters When President Obama announced last month that the United States would host a Summit on Countering Violent Extremism (CVE), we… more 4
February 18, 2015 President Obama: 'Our Fight Against Violent Extremism' An opinion piece by President Barack Obama appeared in the Los Angeles Times today. The text of his piece appears… more 6
February 15, 2015 United States Condemns Murder of Egyptian Citizens by ISIL-Affiliated Terrorists in Libya The United States condemns the despicable and cowardly murder of 21 Egyptian citizens in Libya by ISIL-affiliated terrorists. In a… more 11
February 11, 2015 Authorization of the Use of Force Against ISIL Today, President Barack Obama discussed the ongoing fight against ISIL in Iraq and Syria. President Obama said, "...This is a… more 3
February 10, 2015 United States Suspends Embassy Operations in Sana'a Due to the uncertain security situation in Sana'a, the Department of State has decided to suspend our embassy operations and… more 7
February 10, 2015 Information for U.S. Citizens Affected by the Situation in Yemen The U.S. Department of State warns U.S. citizens of the high security threat level in Yemen due to terrorist activities… more 0
February 9, 2015 A Strong Transatlantic Relationship Cultivates Democracy, Prosperity, and Stability Worldwide This weekend, Secretary of State John Kerry addressed the Munich Security Conference, where he reiterated the importance of a strong… more 3
February 3, 2015 The Death of Jordanian First Lieutenant al-Kasasbeh Today, we join the people of Jordan in grieving the loss of First Lieutenant Moaz al-Kasasbeh, cruelly and brutally killed… more 5
January 31, 2015 ISIL Murder of Japanese Journalist Kenji Goto The United States condemns the heinous murder of Japanese citizen and journalist Kenji Goto by the terrorist group ISIL. In… more 4
January 25, 2015 Secretary Kerry in Nigeria Secretary of State John Kerry traveled to Lagos, Nigeria to emphasize the importance of ensuring the upcoming elections are peaceful,… more 2
February 27, 2015 Engaging Internationally on Climate Science The Intergovernmental Panel on Climate Change (IPCC) just concluded its 41st session in Nairobi – continuing the tradition of rigorous… more 2
February 27, 2015 How Can the International Community Encourage the Development of New Tools and Ideas To Fight Wildlife Crime? "It's time to get serious about wildlife crime" is the theme of this year's World Wildlife Day (March 3). Next… more 12
February 27, 2015 The United States Diplomacy Center – Full Speed Ahead! There's a big hole in front of the 21st Street entrance to the State Department. The construction sometimes snarls traffic… more 2


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June 2, 2014, 4:34 PM
Happy Birthday: Dwight-Englewood School holds 125-year anniversary celebration
Dwight-Englewood School concluded its 125th birthday year with an Anniversary Gala on Saturday, May 31. Nearly 800 alumni, parents, faculty and friends gathered on Leggett Field for dining, dancing, a live auction, tuition raffle and, of course, birthday ...
May 22, 2014, 7:57 AM
Social Scene: Triple Negative Breast Cancer Foundation hosts 2014 Peace, Love and a Cure event
The Triple Negative Breast Cancer Foundation held their 2014 Peace, Love and a Cure event at the home of Melissa Silver in Demarest.
May 12, 2014, 2:13 PM
Social Scene: Tenafly middle schoolers Mason Paulen and Molly Shultz host Tenafly Skate Night to benefit Todd Ouida Children's Foundation and Tenafly Educational Foundation
Tenafly Middle School students Mason Paulen and Molly Shultz hosted Tenafly Skate Night at Palisades Center Ice Rink in West Nyack, N.Y. to raise money for The Todd Ouida Children's Foundation and Tenafly's Educational Foundation.
September 13, 2013, 4:55 PM
Social Scene: Hackensack University Medical Center holds 2nd annual A.I.R. Express golf outing in Tenafly
The 2nd Annual Hackensack UMC A.I.R. Express Golf Outing to benefit The A.I.R. Express (Asthma Information and Relief) Mobile Care Unit was held at Knickerbocker Country Club in Tenafly.
December 7, 2012, 3:51 PM
Social Scene: Englewood Hospital and Medical Center holds Breakfast Club meeting with Harlan Coben
The Englewood Hospital and Medical Center Foundation held their fall gathering of the Breakfast Club at the Alpine Country Club in Demarest
March 20, 2012, 11:34 AM
Harlen Coben: Ridgewood author to sign his new book
Harlan Coben's latest book opens with a down-at-the-heels photojournalist named Ray Levine snapping photos of a bar mitzvah boy. Ray was hired to pretend he's a paparazzo stalking the kid.
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Nissi's Live Music and Events Center Nissi's Live Music and Events Center 2675 North Park Drive, Lafayette, CO 80026 Lafayette, CO Maximum Capacity: people Capacity: people Have your next event at Nissis. Award-winning cuisine and en... www.nissis.com
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Wash Park Studio Wash Park Studio 900 S Pearl St, Denver, CO 80209 Denver, CO Maximum Capacity: 115 people Capacity: 115 people A place where natural light, red brick walls, hickory floors and an exposed ceiling all come togethe... $1,500per event www.washparkstudio.com
Arvada Center For The Arts And Humanities Arvada Center For The Arts And Humanities 6901 Wadsworth Blvd, Arvada, CO 80003 Arvada, CO Maximum Capacity: 500 people Capacity: 500 people Arvada Center For The Arts And Humanities is located at Arvada, CO. Arvada Center for the Arts and H... www.arvadacenterbanquets.com
Summit Event Center Summit Event Center 411 Sable Blvd, Aurora, CO 80011 Aurora, CO Maximum Capacity: 420 people Capacity: 420 people MAJOR RENOVATION COMPLETED Q113 - COME SEE IT! Elegant venue and very reasonable rates.9,000 squar... www.summiteventcenter.com
Trinity Grille Trinity Grille 1801 Broadway, Denver, CO 80202 Denver, CO Maximum Capacity: 120 people Capacity: 120 people The Trinity Grille is located in central Denver at 18th & Broadway, across from the Brown Palace Hot... www.trinitygrille.com
17th Avenue Place Event Center 17th Avenue Place Event Center 478 17th Avenue, Longmont, CO 80501 Longmont, CO Maximum Capacity: 100 people Capacity: 100 people Whether you are planning an important business meeting or an intimate wedding reception, fundraising... www.17thaveeventcenter.com
The Grill at Legacy Ridge The Grill at Legacy Ridge 10801 Legacy Ridge Parkway, Westminster, CO 80031 Westminster, CO Maximum Capacity: 200 people Capacity: 200 people Event space for up to 10-200 guests. We have the best views in the north valley of both mountain su... www.thegrillatlegacyridge.com
Infinity Park Event Center Infinity Park Event Center 4400 E Kentucky Ave, Denver, CO 80246 Denver, CO Maximum Capacity: 1000 people Capacity: 1000 people Located in Glendale, Colorado, the Infinity Park Event Center is one of Colorado's premier event ven... www.infinityparkeventcenter.com
The Limerick Room at the Irish Rover Pub The Limerick Room at the Irish Rover Pub 54 S Broadway, Denver, CO 80209 Denver, CO Maximum Capacity: 120 people Capacity: 120 people The Limerick Room is a private event space housed inside the Irish Rover Pub. We are centrally locat... www.theirishroverpub.com
Tony P's 17th Avenue Tony P's 17th Avenue 777 East 17th Avenue, Denver, CO 80209 Denver, CO Maximum Capacity: 100 people Capacity: 100 people Owned and operated by Tony Pasquini, Tony P's on 17th and Clarkson can accommodate from 10 - 100 per... $13.33-$39.41per person www.tonypspizza.com
Casselman's Bar & Venue Casselman's Bar & Venue 2620 Walnut St, Denver, CO 80205 Denver, CO Maximum Capacity: 1200 people Capacity: 1200 people Live Music Venue and Event Center. Great for Corporate Parties and Events! Audio / Visual included! www.CasselmansEvents.com
Quality Inn Denver Central Quality Inn Denver Central 200 W 48th Ave, Denver, CO 80207 Denver, CO Maximum Capacity: 250 people Capacity: 250 people Our newly remodeled hotel is conveniently located in the heart of the town and intersection on I-25 ... www.qualityinn.com
Jazz At Jacks Jazz At Jacks 500 16th St, #320, Denver, CO 80202 Denver, CO Maximum Capacity: 500 people Capacity: 500 people Escape the generic hotel / function room feel and step up to the top floor of The Denver Pavilions... www.jazzatjacks.com
Unser Karting & Events Unser Karting & Events 7300 Broadway, Denver, CO 80221 Denver, CO Maximum Capacity: 450 people Capacity: 450 people Our upscale kart racing and entertainment venue is designed to provide companies looking for somethi... unserkarting.com
Lucky Strike Denver Lucky Strike Denver Denver Pavilions, Denver, CO 80202 Denver, CO Maximum Capacity: 200 people Capacity: 200 people Lucky Strike Denver is located in Denver Pavilions, Denver's finest outdoor urban entertainment and ... www.bowlluckystrike.com
Lucky Strike Belmar Lucky Strike Belmar 415 South Teller Street, Denver, CO 80226 Denver, CO Maximum Capacity: 60 people Capacity: 60 people Located next to the plaza in the heart of the Belmar Shopping Center Lucky Strike Lanes in Belmar is... $17.50-$19per person $400per event www.luckystrikebelmar.com
The Palm : Denver The Palm : Denver 1672 Lawrence St, Denver, CO 80202 Denver, CO Maximum Capacity: 35 people Capacity: 35 people Your event belongs at The Palm. Whether it's a business lunch for 10, a holiday party for 50 or an e... $20.95-$108per person www.thepalm.com
The Children's Museum Of Denver The Children's Museum Of Denver 2121 Children's Museum Drive, Denver, CO 80211 Denver, CO Maximum Capacity: 680 people Capacity: 680 people Party like a kid again…or have your next grown-up meeting at the Children's Museum. The Children... www.mychildsmuseum.org
Courtyard Denver Airport Courtyard Denver Airport 6901 Tower Road, Denver, CO 80249 Denver, CO Maximum Capacity: 150 people Capacity: 150 people Courtyard Denver International Airport is located just 5 miles from Denver International Airport wit... marriott.com
Denver Merchandise Mart Denver Merchandise Mart 451 E 58th Ave, Denver, CO 80216 Denver, CO Maximum Capacity: 4300 people Capacity: 4300 people The Denver Merchandise Mart Complex provides friendly, professional services and amenities to show p... www.denvermart.com
Magnolia Hotel Denver Magnolia Hotel Denver 818 17th Street, Denver, CO 80202 Denver, CO Maximum Capacity: 250 people Capacity: 250 people The Magnolia Hotel in Denver provides upscale luxury hotel lodging.The Magnolia offers business and ... www.magnoliahoteldenver.com
Hyatt Regency Denver at Colorado Convention Center Hyatt Regency Denver at Colorado Convention Center 650 15th Street, Denver, CO 80202 Denver, CO Maximum Capacity: 12216 people Capacity: 12216 people Contemporary and sleek, one of the newest additions to the Denver Skyline. Located next to the Color... denverregency.hyatt.com
Stonebrook Manor Event Center & Gardens Stonebrook Manor Event Center & Gardens 650 E 124th Ave, Denver, CO 80241 Denver, CO Maximum Capacity: 1700 people Capacity: 1700 people You will remember your wedding day for the rest of your life. When you remember this special day, yo... www.stonebrookmanor.com
Community featured forum posts Ask a question to the Denver, CO Community The First 10 Steps for Wedding Planning(28115 views / 34 posts) Last Post by CRSocials posted 14 days ago What's the BEST piece of wedding advice you've ever gotten/heard?(7895 views / 22 posts) Last Post by djfur1301382 posted 24 days ago Just looking for cheap but classy not tacky wedding favours any ideas(16212 views / 46 posts) Last Post by rubyblancoutle posted November 7, 2014 Wedding Centerpieces(16759 views / 37 posts) Last Post by melis1272096 posted October 28, 2014 Centerpieces take home or rental???(6065 views / 20 posts) Last Post by info1247111 posted October 28, 2014 start a new discussion see more posts
Top Articles featured event planning article Choosing the Right Providers for Your Wedding Posted by admin Planning your wedding can be overwhelming, but taking the time to choose the right venue, caterer, photographer, DJ, and other vendors will help create an unforgettable experience for you and your guests. Consider these tips as you begin your search and learn from the experiences of other brides. Read More
featured event planning article Party Planning 101 Posted by eventective Planning a party can be a very stressful task and many people don't know where to start. Eventective helps walk you through the process and guide your critical decisions. Read More