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23rd March 2010, 04:38 AM | #101 |
diyAudio Member
Join Date: Apr 2003
Location: Southern Tier NY
Lost another FET after powering down and moving amp to test on main speakers. Must be exceeding Vgs limits either during power down or up. I would think a zener would be appropriate here. Lost only one side of the pair. Nice thing about this is the tube shuts down when it fails.
Any thoughts on this?
Living Life Doing the Waltz in 4/4 meter. |
23rd March 2010, 04:51 AM | #102 | |
diyAudio Member
Join Date: Apr 2004
Location: Monroe Township, NJ
A decent design should clip the "finals", before the small signal circuitry clips. No lack of "stones", as it should be. Tweak away! Get the residual hum level down. Adjust the phase compensation cap. value, to get a good looking 2 KHz. square wave.
Eli D. |
23rd March 2010, 02:52 PM | #103 | |
diyAudio Member
Join Date: Jul 2005
Location: West Virginia panhandle
Too much power is almost enough! Turn it up till it explodes - then back up just a little. |
23rd March 2010, 04:39 PM | #104 |
diyAudio Member
Join Date: Apr 2003
Location: Southern Tier NY
I have some 2sk3564's which I may install tonight. The have 15pF reverse capacitance which is higher than the irfbc20's 8pF. Having the zeners internal to the device should have the lowest capacitance vs. using external zeners.
The 2sk3563's are better than the 64's in regards to reverse transfer capacitance but will have to order them. I don't have any zeners in my box greater than a couple of volts unfortunatley.
Living Life Doing the Waltz in 4/4 meter. |
24th March 2010, 01:43 PM | #105 |
diyAudio Member
Join Date: Apr 2003
Location: Southern Tier NY
Need some help here. I spent most of the night last night tracking down a very high frequency unstable oscillation.
The problem occurred after I installed the new spec FETS (ended up going back to the original spec during trouble shooting.) Without the KT88's in, I could set bias anywhere I wanted no issue, however once I put the KT88's in I would get up to about 10mA of bias current and then "click", the current would shoot up to 180mA. I used the word "click" because you could hear the tubes click when it started to run away. With the osc scope I could see the drive voltage start to oscillate. Once the oscillation started it couldn't be stopped unless the amp was powered down. I was able to get the current low enough by biasing direct to the c- rail to measure. At this point I have not hooked up GNFB. I found that the whole input circuit was oscillating. I dropped input impedance to 50k and problem stopped. I also put 510R carbon comps on all of the tube grids right at the pin. Amp is quite now and plays wonderfully. However not all is quite right. I find that I have a 1mV RMS very high frequency oscillation (possibly noise) >>50mHz on the input to the kt88 prior to the grid stopper. It does appear on the gate side of the fets but at a much lower level. I was wondering if a ceramic cap on the FET rails would be of value here? Being that my bias circuitry is a pretty high impedance, I am wondering if I am picking up noise from the environment (i.e phones, wireless router etc.) by putting these on the rails to shunt this noise to ground. I can't see the oscillation/noise on the B+ supply. But the signal is getting back to the input tubes some how, so I plan on increasing the decoupling from the output stage to the LTP and driver on the power supply. I have more than enough drive so losing a few volts of swing will not hurt the amp at all. Any other things I should persue to clean it up further? FYI Ripple on B+ is <<1mV
Living Life Doing the Waltz in 4/4 meter. |
25th March 2010, 12:40 AM | #106 |
diyAudio Member
Join Date: Apr 2003
Location: Southern Tier NY
Version 2 Measurements
Amp is doing pretty well now with No Feedback. No stability issues what so ever. I increased the decoupling between output and driver stage which really quieted down the noise I was seeing.
Attached are the latest measurements. Running 485V B+ for output stage and 470V for driver stage. The first is a picture of the THD vs. freq for 50,55, and 60mA Bias. The second is the spectrum at 40W output. and finally a picture of the square wave. top trace is amp and the bottom trace is of input. My signal source isn't great and my 2nd channel on th scope isn't right, I can't calibrate it correctly. The leading edge of the input is really identical to output trace. I won't complain about the scope as it was given to me a while back. Absolutley NO Hum visable or perceptable. Added latest schematics as well Now to add NFB
Living Life Doing the Waltz in 4/4 meter. Last edited by SGregory; 25th March 2010 at 12:41 AM. Reason: added latest schematics |
25th March 2010, 03:00 AM | #107 |
diyAudio Member
Join Date: Jan 2008
Location: So.Cal.
Excellent progress!!
Would larger R value grid stoppers take care of the oscillations shown on the square wave? I had ringing on the leading edge of the 10Khz sq wave in my no gfb EL34 triode amp only when changing input amplitude; they would immediately decay at steady state. Adding grid stoppers took care of the problem completely, although the leading edge is a bit rounded. Last edited by boywonder; 25th March 2010 at 03:12 AM. |
25th March 2010, 03:50 AM | #108 |
diyAudio Member
Join Date: Apr 2003
Location: Southern Tier NY
The ringing/oscillations comes from the source. The output is almost identical to the input. The only difference is that the top edge has a slope to it in the output. I need to get a better signal generator!!!! In my latest design update, I did up the value of the grid stoppers to 510 carbon. Maybe I should order some 1k carbon and see if things improve further?
I am in the process of trying employ the feedback to no avail. I need to look at things a little closer tomorrow. I put a 100k pot in instead of the 10k specified. What is weird is that when I drop the resistance to increase the feedback I get more gain, distortion also increases. I checked the input signal and the output signal and both are in phase so technically I should get a reduction in gain. Thinking that my scope may be screwed, I flipped polarity on the OPT and it oscillates wildly at power up. (even at 100k resistance). Little stumped right now. So instead of messing it up tonight, I stopped, biased in my good Genelex tubes and hooked it into my main system. Incredible!!! The bass vibrates my windows!!!! I am using a SS Rotel on the other channel and there is a clear advantage to the new tube amp. The speaker dissappears. It can almost live without NFB if it didn't have so much gain.
Living Life Doing the Waltz in 4/4 meter. |
25th March 2010, 04:12 AM | #109 |
diyAudio Chief Moderator
Join Date: Oct 2002
Location: Athens-Greece
Keep it around 6-9dB NFB when you will successfully close the loop. How much is your measured open loop gain? I use 1k on my KT88s, one or two oscillated if I did not up the value more, but stopped when I used 1k Koa Speer carbon. Its in triode mode. Here is its 10kHz square with feedback loop closed, after Cdom over Rf. 31dB gain, 8.5dB NFB.
P.S. Maybe you need to up the grid stoppers around your input valve too. Maybe you got to adjust your probe too? |
25th March 2010, 04:16 AM | #110 | |
diyAudio Member
Join Date: Jul 2005
Location: West Virginia panhandle
Too much power is almost enough! Turn it up till it explodes - then back up just a little. |
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- 800.878.7323
More copies of this ISBNA Fool's Gold: A Story of Ancient Spanish Treasure, Two Pounds of Pot, and the Young Lawyer Almost Left Holding the Bagby Bill Merritt
Synopses & ReviewsPublisher Comments:A fantastically eccentric true crime caper that does for coastal Oregon what Midnight in the Garden of Good and Evil did for Savannah. Just a few months out of law school, Bill Merritt takes a job working for a slightly shady but charismatic lawyer named Thaddeus Silk. Only months later, Thaddeus drops dead of a heart attack, and Bill is left to pick up the pieces of his chaotic and poorly managed practice. Before he can even start to make sense of the mess that was Thaddeus's legal life, the police are knocking at his door, and Bill is being accused of fencing stolen treasure. Enter Abby Birdsong and Grady Jackson, two clients of Thaddeus's whose files are among the boxes and papers and bourbon bottles that litter his office. Drug charges had been brought against Abby for carrying two pounds of pot in her bag; and Grady seeks a permit from the state of Oregon to dig for treasure on a local beach. Bill takes on both of their cases, which, on the face of it, aren't related. When the two cases collide in ways that seem too fantastic to be true, Bill finds himself caught in the middle. How Thaddeus and Bill, Abby and Grady, assorted law enforcement officials and colorful hangers-on overlap and interconnect took Bill another nineteen years to puzzle out. The result is an intricate and original legal yarn with a cast of provincial misfits so peculiar and charming it reads like fiction. Review:"The book suffers from too many cartoonish, unconvincing characters stuck in a plodding story line....Merritt's prose is affable and folksy, but his meandering story lacks grit and wit." Kirkus Reviews
Book News Annotation:Proving yet again that life can always trump fiction in the contest for strangeness, Merritt, a former lawyer, recounts his experiences with a couple of clients embroiled in dope busts and lost Spanish gold on the Oregon coast. Merritt's capers involve four cases whose connections he did not discover for 19 years. Underlying the story is one of the longest and most tantalizing hunts for lost treasure in history. Annotation ©2006 Book News, Inc., Portland, OR (booknews.com)
Synopsis:Fresh out of law school, Bill Merritt takes a job working for a shady lawyer named Thaddeus Silk. After a few months, Thaddeus drops dead from a heart attack, and Bill is left to pick up the pieces of his chaotic and ill-managed practice. Before he can even start to make sense of Thaddeuss legal life, the police are knocking at his door, and Bill is being accused of fencing stolen treasure. Enter Abby Birdsong and Grady Jackson, two of Thaddeuss clients, whose files are among the boxes and papers and bourbon bottles that litter his office. Abby is a middle-aged, overweight, hippie ex-logger caught with some of the oldest, foulest marijuana imaginable. Grady, known around town as the Crazy Man of Neahkahnie Mountain, has paid Thaddeus to sue the state of Oregon for permission to dig holes in a state-owned beach in search of buried Spanish treasure. As legal matters heat up and Bill hears theres a warrant for his arrest just waiting for a judges signature, the cases of the skunky pot and the Spanish treasure collide in ways that seem too fantastic to be true. Merritts telling is as original, fast-moving, and full of surprises as the best legal capers, real or imagined. Synopsis:Attorney Bill Merritt's boss drops dead and before long the police are knocking at his door. One of his boss's clients faces drug charges; another wants to find treasure on Oregon's shore. How the dead lawyer, his clients, assorted law enforcement officials, and colorful hangers-on overlap and interconnect took Merritt 19 years to puzzle out.
About the AuthorBill Merritt practiced law in Portland, Oregon, for more than a decade, and lives there still. Hes the author of Where the Rivers Ran Backward, about his experience in Vietnam and has published articles in regional and political magazines. What Our Readers Are SayingAdd a comment for a chance to win!Average customer rating based on 2 comments:
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The programs all have the following general usage features:
pdb-xxx-ss molecule.pdb molecule.ss [< input] > output
*.pdb file does not exist.
*.ss file already exists.
pdb-pro-ss molecule.pdb molecule.ss < input > output
Enter a title for output ribbon SS file:
The output *.ss file has columns for sequence, secondary structure, and hydrogen bonding. The ``hb'' column for each residue adheres to the following codes: `B' if both carbonyl and amide form mainchain H-bonds for the residue, `O' carbonyl is not bonded, `H' amide is not bonded, `x' neither are bonded, `P' proline with carbonyl bonded, `Q' is proline with free carbonyl.
Note: the diagnostic output is the summary in Kabsch & Sander notation.
The output *.ss file has additional columns
for ``rama'' and ``om''.
The ``rama'' maps the phi/psi angles to the letters
as shown on the printed version of the plot in the diagnostic output.
For example,
`E' is highly probable extended conformation, `e' slightly less
probable, and `R' is right-handed helical conformation.
The grid was determined by a database analysis.
The ``om'' gives the omega angle, with `T' for trans, `s' and `u'
for slightly below and above 180 degrees,
`C' for cis, `b' and `d' near cis, and `X' a bad value.
Note: The diagnostic output can be saved to view as a Ramachandran
plot with the command ``rama-plot''. If the latter usage is chosen,
the ``mol-old.ss'' will be replaced with its updated version.
The standard `ss' codes are output.
The output *.ss file
has additional columns for ``chi''.
`N' is for residues with no side chains, `X' for residues with
non-standard chi values, `A' is the most probable conformation
for that residue, `B' the second best, etc.
Note: Default KeyString is `range'.
Any range not explicitly set defaults to colorindex 7 (white).
To change this, first input a ``range'' consisting of the entire
chain, then individually color the various ranges of interest.
Note: Default color mapping based on database analysis.
Average B for proteins is 24, standard deviation is 12.
See $RIBBONS_HOME/fithx/
for scripts and examples.
Create a *.ss file for a single nucleic acid chain.
This is essentially a dummy program. It simply outputs the
1-letter-code for the nucleotide and assigns each residue to a sheet.
Suggestions are welcome from nucleic acid specialists.
pdb-nuc-ss molecule.pdb molecule.ss < input > output
Enter a title for output ribbon SS file:
Create a new or modify an existing *.ss file,
adding columns for coloring
based on phi/psi and omega values of the mainchain torsion angles.
pdb-rama-ss mol.pdb mol-new.ss < input > output
pdb-rama-ss mol.pdb mol-old.ss > output
Enter a title for output SS file:
Create a new *.ss file,
assigning secondary structure from differential geometry.
Only alpha carbons coordinates are used.
An implementation of the Louie and Somorjai
algorithm has been coded.
pdb-geom-ss mol.pdb mol-new.ss > output
Modify an existing *.ss file,
adding a column for coloring
based on the sensibility of the side chain dihedral values.
The rotamer dictionary of Ponder and Richards as well as my
database analysis have been used.
pdb-chi-ss mol.pdb mol-old.ss > output
Modify an existing *.ss file,
adding a column for coloring based on residue ranges.
Behaves like ``pdb-range-sph'' (can use same input file).
pdb-range-ss mol.pdb old.ss [KeyString] > output
Enter inclusive integer residue range and color index:
Enter another range and color? (EOF to quit)
Modify an existing *.ss file,
adding a column for coloring based on residue temperature factors.
pdb-bf-ss old.ss new.ss [KeyString] < input > output
Analyze an existing *.ss file,
outputting the residue ranges defining helices, one per line.
ss-hx-range your.ss output.range
Analyze an existing *.ss file,
outputting the residue ranges defining strands in sheets, one per line.
ss-sheet-range your.ss output.range
Analyze the output of
to classify turns based on phi/psi angles.
turn-class < your.rama > output
This has been superceded by the
ribbons-error analysis.
Modify an existing *.ss file,
adding a column for coloring based on output of X-PLOR or O.
See $RIBBONS_HOME/analysis/xplor/
or $RIBBONS_HOME/analysis/O/
for scripts and examples.
Ribbons User Manual / UAB-CBSE / email@example.com


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Alibaba Finance Arm Ant Financial Plans 2017 IPO
Alibaba Group's financial affiliate is planning an initial public offering in mainland China in 2017, reported the state-run Shanghai Securities News, citing documents it obtained from asset management firm CDH Investments.
Zhejiang Ant Small & Micro Financial Services Group is valued at $ 35 billion to $ 40 billion. Before going read »
Yue Wang, Contributor


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December 24, 2010
Michael Bartley hosts a special holiday episode of 4802 -- with guests Pittsburgh Bishop David Zubik and Rodef Shalom Congregation Senior Rabbi Aaron Bisno. Hear about their recent pilgrimage for peace as Zubik and Bisno traveled to the Vatican and the Holy Land; also their hopes for Pittsburgh and the world during these turbulent times.
Coming Up Next on 4802
Friday, March 6, 2015
4802 is LIVE Friday at 7:30!


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From Wikipedia, the free encyclopedia - View original article
In its natural sense, discipline is systematic instruction intended to train a person, sometimes literally called a disciple, in a craft, trade or other activity, or to follow a particular code of conduct or "order". Often, the phrase "to discipline" carries a negative connotation. This is because enforcement of order–that is, ensuring instructions are carried out–is often regulated through punishment.
Discipline is a course of actions leading to certain goal or ideal. A disciplined person is one that has established a goal and is willing to achieve that goal at the expense of his or her individuality.
Discipline is the assertion of willpower over more base desires, and is usually understood to be synonymous with self control. Self-discipline is to some extent a substitute for motivation, when one uses reason to determine the best course of action that opposes one's desires. Virtuous behavior is when one's motivations are aligned with one's reasoned aims: to do what one knows is best and to do it gladly. Content behavior, on the other hand, is when one does what one knows is best, but must do it by opposing one's motivations.[1] Moving from content to virtuous behavior requires training and some self-discipline.
The regulation of the behaviors of members of any military, involving rules that govern goal orientation and behavior inside and outside the institution, including the socialization processes that happen in military training.[2] Rules of discipline are firmer or laxer depending on the prevalent culture of the military's country or institution.[3] As early as the time of the Roman Army, discipline was enforced through military justice, but broader compilations of laws such as the Codex Theodosianus contained provisions dealing with military discipline.[4]
Prison discipline refers to the means by which prison staff maintain order inside prisons and correctional facilities. This includes various types of punishments, such as solitary confinement, monetary restitution, exclusion from certain prison programs, and forfeiture of good conduct time. In the past, some prisons also used corporal punishment on inmates who violated prison rules.
This section requires expansion. (January 2014) |
This section requires expansion. (January 2014) |
Self-discipline is the ability to control one's feelings and overcome one's weaknesses; the ability to pursue what one thinks is right despite temptations to abandon it.Self-discipline and self-control give you power over your life.
Look up discipline in Wiktionary, the free dictionary. |
Wikiquote has a collection of quotations related to: Discipline |


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Enhanced United States and Republic of Korea Alliance Cooperation: The Navy to Navy Dimension
11/17/2009Michael McDevitt
Abstract of paper by Adm. Michael McDevitt, Vice President and Director of CNA Strategic Studies, Center for Naval Analyses, presented at a public policy forum of the Center for U.S.-Korea Policy, The Asia Foundation's Korea Office, and Friends of The Asia Foundation/Korea, "New Areas of Cooperation in the U.S.-Korea Alliance," November 4, 2009, Seoul.


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Open AccessThis article is
MDPI and ACS Style
- freely available
- re-usable
Behav. Sci. 2013, 3(4), 634-646; doi:10.3390/bs3040634
The Dialogical Jung: Otherness within the Self
Received: 25 September 2013 / Revised: 13 November 2013 / Accepted: 15 November 2013 / Published: 21 November 2013
(This article belongs to the Special Issue Analytical Psychology: Theory and Practice)
View Full-Text
Download PDF [204 KB, updated 25 November 2013;
original version uploaded 21 November 2013]
Abstract: This paper explores dialogical currents in Jung's analytical psychology, with reference to contemporary theories of the dialogical self. The dialogical self is a notion that has gained increasing currency in psychology since the 1990s, in response to the limitations of traditional notions of the self, based on monological, encapsulated consciousness. Modern dialogical self theory construes the self as irrevocably embedded in a matrix of real and imagined dialogues with others. The theme of dialogical otherness within the self is also taken up in Jung's analytical psychology, both in the practice of active imagination and psychotherapy and in the theory of archetypes, and a dialogical approach to inquiry is evident in Jung's work from the outset. The implications of a dialogical re-conceptualization of analytical psychology and of analytical psychology for dialogical theory are considered in detail.
analytical psychology; dialogical self; archetypes; otherness
This is an open access article distributed under the
Creative Commons Attribution License which permits unrestricted use, distribution,
and reproduction in any medium, provided the original work is properly cited.
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MDPI and ACS Style
Smythe, W.E. The Dialogical Jung: Otherness within the Self. Behav. Sci. 2013, 3, 634-646.
AMA StyleSmythe WE. The Dialogical Jung: Otherness within the Self. Behavioral Sciences. 2013; 3(4):634-646.
Chicago/Turabian StyleSmythe, William E. 2013. "The Dialogical Jung: Otherness within the Self." Behav. Sci. 3, no. 4: 634-646.
Behav. Sci.
Published by MDPI AG, Basel, Switzerland
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US 5426391 A Abstract An integrated circuit including an operating circuit portion which requires a predetermined voltage in order to function properly, a charge pump circuit for providing a high voltage output equal to the predetermined voltage from a lower voltage input, a terminal for receiving voltage from a source of external voltage, and a circuit for selectively providing voltage to the operating circuit portion of the integrated circuit from the terminal if the level of voltage detected at the terminal from the external voltage source is above the predetermined voltage and for providing voltage to the operating circuit portion from the output of the charge pump if the voltage detected at the terminal is less than the predetermined level.
Claims(4) 1. A voltage generation integrated circuit, comprising:
(A) an input terminal for receiving an input voltage; (B) a charge pump circuit having a pump input and a pump output; (C) an output terminal; (D) a control circuit for providing a first and a second control signal in accordance with a level of the input voltage; (E) a first switch coupled between the pump output and the output terminal; (F) a second switch coupled between the input terminal and the pump input, wherein the first and second switches are responsive to the first control signal; (G) a third switch coupled between the input and output terminals, wherein the third switch is responsive to the second control signal, wherein each of the first, second, and third switches further comprises: (i) a first P-channel field effect transistor, a source of the first transistor forming a switch input; (ii) a second P-channel field effect transistor, a drain of the first transistor coupled to a drain of the second transistor, a source of the second transistor forming a switch output; (iii) a first voltage level shifter for selectively coupling a gate of the first transistor to one of the source terminal of the first transistor and a ground terminal in response to a respective one of the first and second control signals; and (iv) a second voltage level shifter for selectively coupling a gate of the second transistor to one of the source terminal of the second transistor and the ground terminal in response to the respective one of the first and second control signals. 2. The voltage generation integrated circuit of claim 1 in which the predetermined voltage magnitude is approximately 12 volts.
3. The voltage generation integrated circuit of claim 1, wherein the output terminal is coupled to an operating circuit, wherein the operating circuit further comprises an electrically programmable and erasable memory array.
4. The voltage generation integrated circuit of claim 1, wherein when the input voltage exceeds a predetermined voltage magnitude, then (1) the first and second switches decouple the charge pump from the input and output terminals and (2) the third switch couples the input terminal to the output terminal in response to the first and second control signals, wherein when the voltage does not exceed the predetermined voltage magnitude, then (1) the first and second switches couple the charge pump to the input and output terminals and (2) the third switch decouples the input terminal from the output terminal in response to the first and second control signals.
Description This is a continuation of application Ser. No. 08/119,869, filed Sep. 10, 1993 and abandoned on 12/13/94. 1. Field Of The Invention This invention relates to computer systems and, more particularly, to methods and apparatus for providing high voltages for erasing and programing memory arrays from either an internal or an external source of voltage. 2. History Of The Prior Art It has been found that the use of computers has grown so extensive that the power used by these computers has become significant. In order to reduce the cost of operation as well as the consequent use of energy resources, a substantial move is underway to reduce this power usage. In fact, a major trend in the manufacture of personal computers is to reduce the voltage level required to operate the integrated circuits which are used in the various components of those computers. There has also been a simultaneous trend to provide portable computers which function for extended periods. This has also has led to attempts to reduce the power used by portable computers. In order to reduce power consumption and extend battery life, much of the integrated circuitry used in personal computers is being redesigned to run at low voltage levels. This reduces the power usage and allows more components to be placed closer to one another in the circuitry. The circuitry and components used in portable computers are being designed to operate at voltages levels such as five volts and 3.3 volts. This helps a great deal to reduce the power needs of personal computers. However, at the same time, the desire to offer more features in portable computers opposes this salutary result. Many of these features require higher voltages to function. For example, one real convenience is the ability to change the basic input/output (BIOS) processes as improvements in a computer or its peripherals occur. Historically, this has been accomplished by removing the electrically programmable read only memory (EPROM) or similar circuitry which provides the read only memory for storing the BIOS processes and replacing it with new circuitry at additional cost. This is a complicated operation beyond the abilities of many computer users. Recently, flash electrically-erasable programmable read only memory (flash EEPROM memory) has been used to store BIOS processes. This memory may be erased and reprogrammed without removing the BIOS circuitry from the computer by running a small update program when the BIOS processes are changed. However, reprogramming flash EEPROM memory requires approximately twelve volts to accomplish effectively; and the lower voltage batteries provided in personal computers are not capable of furnishing this voltage. Another type of flash EEPROM memory array provides an additional example of high voltage requirements in portable computers. Recently, a new form of long term random access storage has been devised using flash EEPROM memory arrays. An example of a flash EEPROM memory array which may be used in place of a hard disk drive is given in U.S. patent application Ser. No. 07/969,131, entitled A Method and Circuitry For A Solid State Memory Disk, S. Wells, filed Oct. 31, 1992, and assigned to the assignee of the present invention. These arrays provide a smaller lighter functional equivalent of a hard disk drive which operates more rapidly and is not as sensitive to physical damage. Such memory arrays are especially useful in portable computers where space is at a premium and weight is important. However, these flash EEPROM memory arrays also require much higher voltages for programming and erasing data than can be provided directly by the batteries of portable computers. Although it has been typical to provide charge pumps to generate higher voltage in circuitry in which batteries do not provide sufficient voltages, this has not been possible with flash EEPROM memory arrays. Now a new arrangement has been devised by which charge pump circuitry may be integrated with a flash EEPROM memory array and used to generate the high voltages necessary for programming and erasing such an array. A detailed description of one such charge pump is furnished in U.S. patent application Ser. No. 08/119,423, entitled Method and Apparatus for A Two Phase Bootstrap Charge Pump, K. Tedrow et al, filed on even date herewith, and assigned to the assignee of the present invention. It has been found to be very desirable that the circuitry by which erasing and programming of flash EEPROM memory arrays is accomplished be capable of utilizing erasing and programming voltages either generated internally by charge pump circuitry from a low voltage level external source or, alternatively, provided externally from a high voltage level source. It is, therefore, an object of the present invention to provide integrated circuitry capable of providing sufficient power to effectively erase and program flash EEPROM memory arrays from either internal or external sources of power. It is another, more specific, object of the present invention to provide a circuit for erasing and programing voltages selecting either from a charge pump circuit associated with the flash EEPROM memory array or from an external high voltage source. These and other objects of the present invention are realized in an integrated circuit which includes an integrated circuit charge pump circuit and an external source of high voltage. The circuitry also includes circuitry for testing whether an external source of high voltage exists and selecting that external source for providing erasing and programming voltages when the external source exists. These and other objects and features of the invention will be better understood by reference to the detailed description which follows taken together with the drawings in which like elements are referred to by like designations throughout the several views. FIG. 1 is a block diagram illustrating a computer system including the present invention. FIG. 2 is a block diagram of a circuit arrangement designed in accordance with the present invention. FIG. 3 is a circuit diagram illustrating a circuit for providing a portion of the block diagram of FIG. 2. FIG. 4 is a circuit diagram illustrating a circuit for providing another portion of the block diagram of FIG. 2. FIG. 5 is a flow chart describing a method in accordance with the present invention. Some portions of the detailed descriptions which follow are presented in terms of symbolic representations of operations on data bits within a computer memory. These descriptions and representations are the means used by those skilled in the data processing arts to most effectively convey the substance of their work to others skilled in the art. The operations are those requiring physical manipulations of physical quantities. Usually, though not necessarily, these quantities take the form of electrical or magnetic signals capable of being stored, transferred, combined, compared, and otherwise manipulated. It has proven convenient at times, principally for reasons of common usage, to refer to these signals as bits, values, elements, symbols, characters, terms, numbers, or the like. It should be borne in mind, however, that all of these and similar terms are to be associated with the appropriate physical quantities and are merely convenient labels applied to these quantities. Further, the manipulations performed are often referred to in terms, such as adding or comparing, which are commonly associated with mental operations performed by a human operator. No such capability of a human operator is necessary or desirable in most cases in any of the operations described herein which form part of the present invention; the operations are machine operations. Useful machines for performing the operations of the present invention include general purpose digital computers or other similar devices. In all cases the distinction between the method operations in operating a computer and the method of computation itself should be borne in mind. The present invention relates to a method and apparatus for operating a computer in processing electrical or other (e.g. mechanical, chemical) physical signals to generate other desired physical signals. Referring now to FIG. 1, there is illustrated a computer system 10. The system 10 includes a central processor 11 which carries out the various instructions provided to the computer 10 for its operations. The central processor 11 is joined to a bus 12 adapted to carry information to various components of the system 10. Joined to the bus 12 is main memory 13 which is typically constructed of dynamic random access memory arranged in a manner well known to those skilled in the prior art to store information during a period in which power is provided to the system 10. Also joined to the bus 12 is read only memory 14 which may include various memory devices well known to those skilled in the art each of which is adapted to retain a particular memory condition even in the absence of power to the system 10. The read only memory 14 typically stores various basic functions used by the processor 11 such as basic input/output processes and startup processes typically referred to as BIOS processes. Such memory 14 may be constructed of flash EEPROM memory cells adapted to be modified as various ones of the BIOS processes used by a particular computer are changed. Typically, such flash EEPROM memory will include circuitry for programming and erasing the memory array. If the memory 14 is constructed of flash EEPROM memory cells, it may be modified by running an update process on the computer itself to reprogram the values stored in the memory 14. Also connected to the bus 12 are various peripheral components such as long term memory 16 and circuitry such as a frame buffer 17 to which data may be written which is to be transferred to an output device such as a monitor 18 for display. The construction and operation of long term memory 16 (typically electro-mechanical hard disk drives) is well known to those skilled in the art. However, rather than the typical electro-mechanical hard disk drive, a flash EEPROM memory array may be used as the long term memory 16. Such flash EEPROM memory arrays are programmed and erased through techniques which utilize voltages greater than that typically available to the integrated circuits of more advanced portable computers. Such flash EEPROM memory arrays may include circuitry for programming and erasing the memory array. Consequently, such long term memory arrays as well as memory 14 may provide circuitry for generating high voltages from the lower voltages available from their batteries such as the invention described in the copending patent application entitled Method and Apparatus for A Two Phase Bootstrap Charge Pump, referred to above. Such circuits may also have available external sources of high voltage which may be used for programming and erasing flash EEPROM memory arrays. A flash EEPROM memory array is made up of memory cells which include floating gate field effect transistor devices. Such memory transistors may be programmed to change the charge stored on the floating gate, and the condition (programmed or erased) may be detected by interrogating the cells. The conventional method of erasing an array of flash EEPROM memory cells erases all of the cells together (or at least some large block thereof). Typically, this requires the application of twelve volts to the source terminals of all of the memory cells, grounding the gate terminals, and floating the drain terminals. The programming of memory cells is typically accomplished a word at a time but conventionally requires that the drain of selected cells be placed at six or seven volts, the gate at eleven or twelve volts, and the source be grounded. Although it has been typical to provide charge pumps to generate higher voltages in circuitry in which batteries do not provide sufficient voltages, this has not been possible with flash EEPROM memory arrays. Although such charge pumps are able to increase the voltage to an appropriate level, prior art charge pumps do not provide sufficient current to generate the power for effectively erasing and programming flash EEPROM memory when erased in the conventional manner. A new charge pump circuit has been devised which is capable of providing the high voltages and currents which are required to program and erase flash EEPROM memory arrays. The copending patent application referred to above entitled Method and Apparatus for A Two Phase Bootstrap Charge Pump describes that charge pump circuit. Such a charge pump circuit is also described in detail hereinafter. FIG. 2 is a block diagram illustrating a circuit arrangement 20 designed in accordance with the present invention. FIG. 5 is a flow chart which describes the operation of the arrangement 20. The arrangement 20 includes a terminal 21 which receives voltage from a source of external voltage. The source of voltage connected to the terminal 21 may be a twelve volt source capable of furnishing whatever current is necessary for programing and erasing a flash EEPROM memory array. Alternatively, the source of voltage connected to the terminal 21 may be a source of a lower voltage such as five volts which must be used to generate a higher voltage within the circuit arrangement 20. The arrangement 20 also includes a charge pump circuit 22 designed in accordance with the principles described in the copending patent application to generate from an external voltage of five volts an internal voltage of approximately twelve volts with a current sufficient to erase flash EEPROM memory arrays. A circuit essentially identical to that illustrated in FIG. 2 may also be used to generate from an external voltage of five volts an internal voltage of approximately nine volts with a current sufficient to program flash EEPROM memory arrays. Either of the voltages available at the terminal 21 or at the output of the charge pump circuit 22 may be provided to an output terminal designated VppI (internal high voltage) in the figure. Which of these voltages is applied depends on the availability of the external high voltage (twelve volt) source at the terminal 21. If the high voltage external source is available to the computer (or other) system at the terminal 21, then a first switch 24 is closed to connect the source at the terminal 21 to the output terminal VppI. Simultaneously, a pair of switches 25 and 26 are each opened to disconnect the charge pump circuit 22 from the output terminal VppI. If the source of high voltage is not available but only five volts is available at the terminal 21, then the switch 24 is opened while the switches 25 and 26 are closed to connect the charge pump circuit 22 between the output terminal VppI and the input terminal 21 at which the lower voltage is available. In order to test the presence of the high voltage at the terminal 21, a test circuit 27 is provided. The circuit 27 is a voltage level detector which monitors the value of the voltage available at the terminal 21 and controls the closure of the switches 24, 25 and 26 which connect the different sources to the output terminal VppI. The circuit 27 may be designed in a manner well known to those skilled in the art to produce a voltage level detector. One such arrangement is described in detail in U.S. patent application Ser. No. 08/003,618, entitled Circuitry for Power Supply Voltage Detection And System Lockout For A Nonvolatile Memory, M. Landgraf, filed Jan. 13, 1993, and assigned to the assignee of the present invention. If the voltage is at the high level (e.g., twelve volts), then the circuit 27 causes a controller circuit 28 to operate the switches in the manner discussed in order to provide the correct voltage from the terminal 21 at the output terminal VppI. If on the other hand, the voltage at the terminal 21 is the lower level (e.g., five volts), then the circuit 27 provides signals to cause the controller 28 to operate the switches 24, 25, and 26 to connect the output of the charge pump source 22 to the output terminal VppI. In the preferred embodiment of the invention, the controller circuit 28 may be an integrated circuit processor such as that disclosed in U.S. patent application Ser. No. 08/086,186, entitled Flash Memory Array System and Method, M. Fandrich et al, filed Jun. 30, 1993, and assigned to the assignee of the present invention. Such a device may be programmed to respond to particular control signals to provide signals to open and close particular switching devices such as the switches 24, 25, and 26 used in the circuit arrangement 21 in the manner described above. It should be noted that it is not necessary to include a device as powerful as the microprocessor of the preferred embodiment in order to response to a signal from the circuit 27 and operate the switches 24, 25, and 26 in the manner described above; less capable control circuits and state machines may be designed by those skilled in the art to accomplish this purpose. FIG. 3 illustrates a switch which may be utilized in the circuit of FIG. 2 in order to provide appropriate switching capabilities for each of the switches 24, 25, and 26. Because N channel field effect transistor devices do not provide a sufficiently high voltage because of the necessity to bias the gate at too high a value in order to eliminate threshold loss, a P channel field effect transistor device must be used. Moreover, if a typical single P device switch were to be used, the biasing provided would be improper in some conditions because the value of the voltages at the terminal 21 and the output of the charge pump 22 varies so that the switches would function improperly. Therefore, a pair of P devices 31 and 32 are connected in what is referred to as a back-to-back arrangement. To turn on the devices 31 and 32, the gates are taken to zero volts. To turn off the devices, the gates are each connected to the closest source of high voltage adjacent to the gate terminal. Thus, with the switch 26, to turn off the device 31 when it is connected to the output of the charge pump and to the terminal VppI, the gate of the device 31 is connected to the voltage at the output of the charge pump. At the same time, the gate terminal of the device 32 (when connected to the terminal VppI) is connected to a voltage Vb at the same terminal VppI. This arrangement assures that the gate of each device is at a value as high as the highest drain or source terminal of the device and isolates the terminal between the two devices 31 and 32. In order to provide the high and low values of voltage to each of the gates of the devices 31 and 32 of each of the switches, level shifters 33 and 34 are used. Each level shifter 33 and 34 receives a digital input signal from the control circuit 28 and provides the appropriate value to the devices 31 and 32 to enable or disable the devices. For example, if the input signal is a low value, ground may applied by the level shifter to the gate of the associated device. If the input signal is a high value, the voltage (Va or Vb) provided at the immediately adjacent terminal is applied to the gate. The switches 25 and 26 are arranged to respond in the opposite sense as does the switch 24 so that the switches 25 and 26 close when the switch 24 opens and open when the switch 24 closes. It should also be noted that the preferred embodiment of the P devices utilized as the switches 31 and 32 are especially designed and are sometimes referred to as O devices. U.S. patent application Ser. No. 07/804,093, entitled A High Voltage MOS Transistor For Flash EEPROM Applications Having A Unisided Lightly Doped Drain, Sery et al, filed Dec. 6, 1991, and assigned to the assignee of the present invention describes such devices in detail. For the purpose of the present specification, O devices are P channel field effect transistor devices which have thicker gate oxide layers which are devised to tolerate the voltages applied to such devices over the lifetime of the part without oxide layer breakdown. Typically such an oxide layer is greater than 190 angstroms and often as thick as 300 angstroms. The circuit 40 illustrated in FIG. 4 is a charge pump circuit which may be used as the charge pump 22 of FIG. 2. The circuit 40 includes a number of stages of N type field effect transistors 41, 42, 43, and 44 connected in series between a source of voltage Vcc and an output terminal Vout. In the preferred embodiment of the circuit, the transistors 41, 42, and 43 as well as the other transistors are special N type devices referred to as S type devices. S type devices are basically N type devices having a very low threshold voltage level. Each stage of the circuit 40 except the last or output stage also includes an N channel field effect transistor device 53, 54, or 55 connected to the gate terminal of the device 41, 42, or 43 of that stage. The circuit 40 includes two sources of clock pulses 45 and 49 which produces the clock pulses illustrated in FIG. 4. These clock pulses are applied in a unique manner in order to allow the operation of the circuit 40 to produce the desired output voltages and currents. The two phases of input clock signals (phase 1 and phase 2) are furnished to the circuit 40 from sources 45 and 49 via capacitors 47, 50, and 52 and also by capacitors 46, 48, and 51. The pulses of the phase 1 and 2 clock pulse trains which are applied to the gate and drain terminals of the switching devices 41, 42, and 43 turn on those devices in sequential order. Similarly, the pulses of the phase 1 and 2 clock pulse trains which are applied to the gate terminals of the control devices 53, 54, and 55 turn on those devices sequentially. The control device of each stage, however, is turned off during most of the time the associated switching device 41, 42, or 43 of that stage is conducting. This disconnects the gate and drain terminals of the stage while the device is conducting allowing the gate to reach a higher voltage than the drain and operate the device in a region in which there is no threshold voltage drop (Vt). The lack of threshold drop increases the amount of current which the charge pump circuit is able to produce to approximately twice the current of a more conventional charge pump. Thus, when the phase 1 clock goes high, the device 41 turns on; and current provided by the source Vcc charges the capacitor 46. When the phase 1 pulse goes low the device 41 switches off. Then the phase 2 clock pulse turns on the device 42; and the voltage on the capacitor 46 due to charging from the source Vcc and the positive phase 2 pulse causes the charge stored on the capacitor 46 to begin to charge the capacitor 47. The device 42 switches off when the phase 2 pulse goes low. When the phase 1 pulse again goes high, the source Vcc again charges the capacitor 46. Simultaneously, the device 43 switches on; and the voltage on the capacitor 47 due to charging from the capacitor 46 and the positive phase 1 clock pulse begins to charge a capacitor 48. When the phase 1 clock goes low, the device 43 turns off. Ultimately, the charging of the capacitor 48 and a positive phase 2 clock pulse raise the voltage level on the capacitor 48 sufficiently above the level Vout to cause the conduction of the switching device 44. When the output device 44 turns on, a pumped voltage is furnished at Vout equal approximately to the number of stages plus one multiplied by the value of Vcc (e.g., five volts). This provides the desired output voltage while furnishing the high level of current necessary to erase and program flash EEPROM memory arrays. Although the present invention has been described in terms of a preferred embodiment, it will be appreciated that various modifications and alterations might be made by those skilled in the art without departing from the spirit and scope of the invention. The invention should therefore be measured in terms of the claims which follow. Patent Citations
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← Cops get drug benefit | School skirmish → |
A hooded burglar stole expensive electronics from a Herbert Street apartment while its tenant slept on Feb. 4.
The victim woke up at home — which is between N. Henry and Humboldt streets — at about 8 am when he heard a loud banging noise. He looked out his window to see the perp leaving with his TV, DVD player, stereo, camera and turntable in a box. He told police that his front door had been dead-bolted, and that only a few people in his building have access to a key.
← Cops get drug benefit | School skirmish → |
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Food Systems Institute Seminar 1: Movie Screening - Fed Up
Date & Time |
Tuesday, September 16, 2014 |
Location |
Delaware Valley College |
Details |
Join us for the first seminar of the Fall series of the Food System Institute. We will screen the movie Fed Up and then follow up with a panel discussion including:
Refreshments will be available in the Life Sciences Building atrium. |
More Information |


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Top Definition
An adjective used to discribe ones behavior. Depending on the context can be really good or really bad, but always denotes an extreeme.
My idiot friend was being such a third level, telling everyone how i spilt an entire pint of Guinness on myself!
by Go-man
May 26, 2006
1 more definition
Third level is also used frequently as a noun, such as in this pensive statement:
"ah, Donny...what a third level!"
by Go-Man
November 28, 2006


text:
Virtual trucking
By "virtual trucking" we don't mean computer games or training simulations, and we don't mean ivirtuous trucking either, as in the iOverdrive Knights of the Road feature. In this CNN interview, business consultant Amy Zuckerman uses ">virtual" to mean "online and networked" and says truck drivers are examples of employees "operating virtually" in America's "hidden tech" economy
The truck world is operating virtually all the time and no one ever thinks of that. Fleets of thousands of drivers out on the road using all kinds of remote technology you can imagine. They're using laptop PCs, they're doing all sorts of work and communicating back to the base. This is an example of a literally virtual business on the road all the time. Nowadays the technology and data transmission going on in the trucking industry is really phenomenal. They're being asked to gather much more information than they used to. Truck drivers on their own, they're operating virtually.
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American Microsemiconductor, Inc.
Bipolar Junction Transistor (BJT) Description of bipolar transistor. The transistor is primarily used as a current amplifier. When a small current signal is applied to the base terminal of a bipolar transistor, it is amplified in the collector circuit. This current amplification is referred to as hfe or beta and equals Ic/Ib. As with all semiconductors, breakdown voltage of a transistor is also a design limitation. There are breakdown voltages that must be taken into account for each combination of terminals of a transistor... (read more)Browse Power Bipolar Transistors Datasheets for American Microsemiconductor, Inc. -
American Microsemiconductor, Inc.
MRF5176 Power Microwave Transistor American Microsemiconductor Inc. (AMS) announces ready delivery of the MRF5176 power microwave transistor. This NPN Silicon transistor is designed for wideband large-signal driver and predriver amplifier stages. It features 15 Watts output and a 200-600 MHZ frequency range. The output Power is 15 Watts at 28 Volts, Vcc. Minimum Gain is 10 dB also at 28 Volts with an efficiency of 50%. Adding to our microwave line, the MRF5176 is available from AMS in the original helicopter style RF... (read more)Browse RF Transistors Datasheets for American Microsemiconductor, Inc. -
American Microsemiconductor, Inc.
2N4949 Unijunction Transistor 2N4949 MILITARY UNIJUNCTION TRANSISTOR BY AMERICANMICROSEMICONDUCTOR Inc. (AMS). The most common use for the 2N4949 is to trigger a Silicon Controlled Rectifier (SCR), although its output is often used to trigger other devices. The 2N4949 Unijunction Transistor (UJT) features a tightly controlled intrinsic standoff ratio and a 7 Kohm interbase resistance in a hermetically sealed TO-18 metal package; the 2N4949 is also available for commercial and inustrial use... (read more)Browse Unijunction Transistors (UJT) Datasheets for American Microsemiconductor, Inc. -
Avago Technologies
Automotive 1MBd Transistor Output Optocoupler application environments. This diode-transistor optocoupler houses a new AlGaAsP for higher LED reliability and longer operating life with reduce output drive current. This digital automotive optocoupler uses an insulating layer between the light emitting diode and an integrated IC detector to provide electrical insulation between input and output. Separate connections for the photodiode bias and output transistor collector increase the speed up to a hundred times over that of a conventional... (read more)Browse Optocouplers Datasheets for Avago Technologies -
American Microsemiconductor, Inc.
2 MHZ - 30 MHZ Power Transistor 2SC2879 RF Power Transistor 2 MHZ to 30 MHZ from AMERICAN MICROSEMICONDUCTOR: 2SC2879 Silicon NPN Power Transistor, ROHS compliant, Low Power Supply operation, 12.5 Volts. Direct replacement for Toshiba part number 2SC2879 and other 2SC2879 manufacturer's parts. Off the shelf, special testing and Mil qualification available. Features: Low Power Supply use = 12.5 Volts. Po =100 Watt PEP. Gp =15.2 Typical at 100 Watts a8 28 MHZ. IMD3 =-24 dB Max at 100 Watts(PEP). Package: High Reliability SOT-121 Var... (read more)Browse Bipolar RF Transistors Datasheets for American Microsemiconductor, Inc. -
TGF2819-FL GaN RF Power Transistor Key Features. Frequency range: DC - 3.5GHz. Output power (P3dB): 126 W peak, 25 W average at 3.3GHz. Linear gain: > 14 dB typical at 3.3 GHz. Typical PAE3dB: > 58 % at 3.3 GHz. Operating voltage: 32V. Low thermal resistance package. Description. The TriQuint TGF2819-FL is a greater than 100 W Peak (20 W Avg.) (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint's proven TQGaN25HV process, which features advanced field plate techniques... (read more)Browse RF Transistors Datasheets for TriQuint -
American Microsemiconductor, Inc.
6-Pin Dip Optoisolators Transistor Output - 4N25 The 4N25/A, 4N26, 4N27 and 4N28 Optocoupler/Isolator devices consist of a gallium arsenide infrared input diode optically coupled to a monolithic silicon phototransistor output in a 6-pin DIP. Most Economical Optoisolator Choice for Medium Speed, Switching Applications. Meets or Exceeds All JEDEC Registered Specifications. Quick Links: Specifications and ordering information for 6-Pin Dip Optoisolators Transistor Output. 4N25/A,. 4N26,. 4N27. 4N28. FEATURES. General Purpose Switching... (read more)Browse Transistors Datasheets for American Microsemiconductor, Inc. -
TGF3015-SM 50 Ohm-Input Matched Transistor Key Features. Frequency range: 30 MHz - 3.0 GHz. Output power (P3dB): 11W at 2.4 GHz. Linear gain: 17.1 dB typical at 2.4 GHz. Typical PAE3dB: 62.7% at 2.4 GHz. Operating voltage: 32V. Low thermal resistance package. CW and pulse capable. 3 x 3 mm package. The TriQuint TGF3015-SM is a 10W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30 MHz to 3.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on... (read more)Browse Transistors Datasheets for TriQuint -
DC-12GHz GaN Die Transistor Family (7-70W) DC-12GHz GaN Die Transistor Family consist of discrete GaN on SiC HEMT. Thy are designed using TriQuint's proven TQGaN25 production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. They are appropriate for high efficiency applications. Lead-free and RoHS compliant. (read more)Browse Transistors Datasheets for TriQuint -
C-Band 5W GaN RF Input-Matched Transistor The TriQuint TGF3020-SM is a 5W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 4.0 to 6.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in an industry-standard 3 x 3 mm surface mount QFN package. Lead-free and ROHS compliant. Evaluation boards are available upon request. Key Features. Frequency range: 4... (read more)Browse Transistors Datasheets for TriQuint


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Zuleikha Robinson: astrology, horoscope, natal chart |
Born: | June 29, 1977, 12:00 PM (unknown) | |||
In: | London (United Kingdom) | |||
Sun: | 7°35' Cancer | |||
Moon: | 13°44' Sagittarius | |||
Dominants: | Taurus, Sagittarius, Cancer Uranus, Venus, Moon Fire, Water / Fixed | |||
Chinese Astrology: | Fire Snake | |||
Numerology: | Birthpath 5 | |||
Height: | Zuleikha Robinson is 5' 7½" (1m71) tall | |||
Popularity: | 4,730 clicks, 5,561st woman, 14,781st celebrity |
Zuleikha Robinson (born 29 June 1977) is a British actress, raised in Thailand and Malaysia by a Burmese Indian mother and an English father. Her name means "beautiful one" in Persian. She is a graduate of the American Academy of Dramatic Arts in Los Angeles, and best known for playing Yves Adele Harlow in the X-Files spin-off, The Lone Gunmen (TV series). In 2006, she played a Bengali character called Moushumi Mazumdar in Mira Nair's acclaimed film The Namesake. Robinson had a supporting role in the HBO series Rome, and played Eva Marquez, an NYPD detective, in the television drama on Fox, New Amsterdam. Robinson joined the cast of the ABC show Lost in 2009 during its 5th season, as a recurring character named Ilana, who is described as "a dangerously smart and also simply dangerous...
If you happen to know the time of birth of Zuleikha Robinson, we would appreciate it very much if you would send us your information including your source, if any. We thank you in advance for contributing to the enhancement of our astrological database. As a token of our gratefulness, we shall be glad to send you for free the astrological portrait (32-36 pages) of this celebrity, if you let us know that you are interested in it.
Celebrities born the same day: Nicole Scherzinger, Antoine de Saint-Exupery, Gary Busey, Oriana Fallaci, Maria Conchita Alonso, Henri Proglio, Robert Schuman, Jacques Toubon, Frédéric Dard, Lucie Aubrac, Giacomo Leopardi, Nelson Eddy, Amanda Donohoe, Kimberlin Brown, Jacques Balutin... List of all the celebrities born on June 29.
Celebrities being the same height: Monica Bellucci, Sandra Bullock, Céline Dion, Michelle Pfeiffer, Ingrid Chauvin, Antonio Banderas, Ellen DeGeneres, Bob Dylan, Steven Spielberg, Adele (singer), Kim Basinger, Aaliyah, Trent Reznor, Jeff Buckley, Greta Garbo... List of all celebrities being 5' 7½".
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Every time Felix sneezes he says "Haaaaachupitchu!"
It took us a while, but we finally figured out why. Haaaaachupitchu is the secret password the siamese kitten Skippyjon Jones gives to the Los Chimichangos, a gang of loco Chihuahuas, in the picture book Skippyjon Jones by Judy Schachner.
At four years old, books loom large in my son's world, and the line between their world and the real world is a hazy one. Did you know white blood cells have mouths that eat our germs? They do in The Magic School Bus, and so, figures Felix, they must in reality.
In the dark, books about monsters can't even be in the same room as him. There's A Monster At the End of this Book, starring loveable, furry old Grover from Sesame Street, cute and funny thought it may be, stays in a box in the living room and only comes out in daylight. Same with There's a Nightmare in My Closet by Mercer Mayer, which used to be one of my favorite stories.
As a child, my bedroom had a closet that connected with my parent's room, a cramped little hallway stuffed with clothes and shadows. It always frightened me, and Mayer's book, in which it turns out the monster in the closet is just as scared of the little boy in bed as the boy is of the monster, was very important to me. Like that boy, I still close all the doors in my bedroom before going to sleep. I probably always will.
With all this in mind, I wondered: what weird behavior or traits did my friends and colleagues pick up from books when they were kids? You'll find their answers if you click on.


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Xander Blade
he looks at her change in expression, though unfazed as he expects such as normal when he tells people about this "well i was kind of thinking along the lines of this and this i have learned these and practiced them since childhood ((i really did learn of these like 10 years ago and loved them since, ended up being coincidental. you don't have to listen to the second one all the way through its a bit long XD))
Senior Member
Ask Her Etwhal
"hmm sounds good, let's go then. one needn't worry about playing from my heart. My heart is the only thing i have left..."
Armored Rammus
nevin was still standing unmoved from the destruction. a small rock falls from the ceiling landing on his head with a light thump. "ow"he calmly says


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Kate Middleton's Baby Bump | Photos
Kate Middleton Puts Her Growing Baby Bump on Display at a School Visit
Kate Middleton put her baby bump on display when she visited the Willows Primary School in Manchester, England, today. She wore a printed Erdem dress as she arrived and waved to a gathered crowd of young children. Kate also greeted the school's "executive dog," Henry, who presented her with flowers and treats for her pup, Lupo. She joked, "Henry, you have gone to so much trouble."
Kate is working hard through her pregnancy, having made a special royal appearance at the National Review of Queen's Scouts at Windsor Castle on Sunday. Kate Middleton showed her baby bump in a mint-green Mulberry coat as she greeted the scouts, who had earned a special honor from the queen. Another big Kate event will take place less than a month before her due date in July — she is expected to attend a Princess Cruises naming ceremony in Southampton in June. There, Kate will be named "the godmother" of Royal Princess, one of the cruise line's ships.
- Get exclusive details on Joe and Sofia's nuptials — Us Weekly
- Neil Patrick Harris would probably not host the Oscars again — HuffPost Celebrity
- How does Jennifer Lawrence fare in her latest film? — Lainey Gossip
- Patrick Schwarzenegger and Miley Cyrus might be having a rocky time — Dlisted
- Yep, Jessica Simpson can still pull off those Daisy Dukes — ET
- Adam Driver reveals why he's terrified of the Internet — JustJared
- Which reality star might be making a comeback? — Hollywood Tuna
- Iggy Azalea didn't want that Grammy anyway — Pink Is the New Blog
- Justin Bieber is begging Seth Rogen to roast him — The Superficial
- Kourtney Kardashian opts for a different kind of trainer — I'm Not Obsessed


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Enjoying every moment of my life!
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Freelance Graphic Designer • http://www.ScorpiosGraphx.com
Freelance Graphic Designer • http://www.ScorpiosGraphx.com
Hello, my nickname is Ray and I'm 21 years. I love to draw and doodle my favorite subway masters characters (Ingo and Emmet from Pokemon Black and White. Also, I draw random things that just hop from my mind. : D My Deviantart that don't post artwork there anymore: http://xxangel-rayxx.deviantart.com/ My role playing accounts: http://subwaymasterskids.tumblr.com http://im-cannibal-ingo.tumblr.com http://protectiveangelsubwaymaster.tumblr.com
Jan 23rdPlease like my facebook page! x : https://www.facebook.com/harleystrongartanddesign Welcome, my names Harley, I'm 19 and aspiring to be and artist. I work mostly with pattern, strong black ink and negative spaces. My work borders somewhere on the line between fine art and design and must be taken at face value. I hope you like what you see. Feel free to contact me and head over to my facebook page or blog: Blog: http://www.harleystrongfantasyart.blogspot.co.uk/
Feb 3rd, 2014gubinjrmdopo,wlñwkwekjrnmioe3,wñ.,elñmrkñloij4e3
Jan 11thNothing!
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Apr 4th, 2013blkbear526 I have found him To get to know more about me, I am the type that like to have friends, and I am an upfront person, and honest. I help those that ask or need my help or if I can\\\\\\\'t I will say that I can\\\\\\\'t. I can be the ear to listen to problem or something special, but I am a realest and I believe in the Nature of love and the heavens. I guess you think I have my head in the clouds, but I feel that love should be express in many ways. I am spirited, I love to cook, have fun, making passionate love to a chubby guy is what I love. I like movies of all type just about, and I love shows and plays, I am an artist (graphic designer) I have a degree and looking to someday start my own business. I love rollercoasters, and disney. Which someday my king will take me. I am romantic in a big way, I love music and taken showers with the man I love. Making love to a person that your attracted too is special to have your heart full of love. I am versatile and will do what it takes to please my man(I hope it to be you).So if you like what I have wrote become my friend and lets chats.
Sep 15th, 2013THE GENIE IS OUT THE BOTTLE AND IM NOT GOING BACK IN
Dec 27th, 2013I'm 23 years of age, who loves digital art, photography, photo manipulation and traditional art :) I really want to work with such professions later in life. I'm experiencing something new everyday and try to learn as much as possible to become even better. I also do a bit of website designs, as well as coding (HTML, CSS and a bit of PHP.).
Aug 14th, 2013Ahoj :) i am Lucie and i love everything what has something with art and people :)) i am trying to take photos because this is my passion and matter of my heart but i have still a lot to learn :) wish you all wonderful day and hush hush to make your awesome art so i can enjoy it here :D ♥
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Aug 8th, 2012My name is Thanasis Paschalides known online as blerc. I am currently working as an Arts Teacher in a public primary school in Xanthi, Greece, where I also reside. I am a graduate of the Faculty of Fine Arts of the Aristotle University of Thessaloniki (Greece), with an additional year of studies in Valencia / Spain. I like working with all kinds of mediums. My current focus is on graphic design. This page will host some of my creations that include my work as an artist & graphic designer, lessons with my students and, of course, many random blog posts. In past years, I have participated in certain group shows and publications, with some of the most important presented below. - Group Exhibitions - January 2012 // Composition-Construction-Production /// State Museum of Contemporary Art December 2010 // Rooms 2010 – St. George Lycabettus Hotel /// Gallery Kappatos /// Athens October 2006 // Graduation Exhibition – Macedonian Museum of Contemporary Art /// Thessaloniki October 2006 // Co-existence – Zena Athanasiadou Gallery /// Thessaloniki August 2005 // Vagabond -Warehouse /// Thessaloniki Port April 2004 // Sinergia – Center of Contemporary Art /// Larisa April 2002 // Mediterranean Art /// Huesca / Spain - Publications - Exostis Press – Issue Oct 2011 Urban Press – 2010-2011 -
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Mar 9th, 2013Lowbrow is a widespread populist art movement with origins in the underground comix world, punk music, hot-rod street culture, and other subcultures. Lowbrow art often has a sense of humor - sometimes the humor is gleeful, sometimes impish, and sometimes it is a sarcastic comment. The single most common tactic that Lowbrow artists employ is to poke fun at convention. They know the "rules" of art, and consciously choose not to abide by them. If the test of time for legitimacy (as an artistic movement) means that Lowbrow speaks/spoke, in visual terms, to the millions of us who share a common cultural, symbolic language - albeit a "lower" or "middle" class, media-driven language - then, yes, Lowbrow is here to stay. Anthropologists will probably study Lowbrow in the future, to attempt to figure out late 20th and early 21st century U.S. societal influences.
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Grand Forks mom pleads not guilty to cold-weather charges
GRAND FORKS - A Grand Forks woman accused of taking her barefoot daughters outside in sub-zero temperatures pleaded not guilty to two felony counts of abuse or neglect of a child Friday.
A criminal complaint alleges that Breanna Prather, 21, dragged her 5-year-old through the snow and carried her 2-year-old under her arm "like a football."
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19th June 2005, 08:41 PM | #1 |
diyAudio Member
Join Date: Aug 2004
Location: Behind you
Simple(ish) discrete op-amp
I've been pondering making a design for a discrete op-amp. Something that is not too complex and yet offers performance as good as IC op-amps.
Attached is one design I am considering (only simulated at the moment - it's too damned hot to do any real work). It has a single-ended input instead of differential for simplicity (lower component count plus no need for Miller compensation). This makes it 'current feedback' (as in low-impedance feedback node - not to be confused with 'current feedback' meaning feedback proportional to output current). Biasing for the Vas is accomplished with current mirrors. This helps with symmetry, in particular compensating for the potentially unequal Vgs of the two Vas JFETs. Both the input stage and Vas are cascoded, which in conjunction with the current mirrors provides both constant current and constant voltage operation for those transistors, minimizing thermal memory distortion. Output stage uses JFETs, for simplicity. Simulated performance compares well with IC op-amps, with 134dB of open-loop gain, 30MHz GBP, very high input impedance, low output impedance, low distortion and around 180V/us of slew-rate. It's not quite as simple as I had set out to create, but it's not too bad. Comments and criticism welcome!
https://mrevil.asvachin.eu/ |
19th June 2005, 09:33 PM | #2 |
diyAudio Member
Join Date: Apr 2005
Location: Russia
At first sight like all it is good, but something guards. Did not look more deeply.
For the information look. |
19th June 2005, 09:54 PM | #3 |
diyAudio Member
Join Date: Jun 2004
Location: Warsaw
what are J5 & J6 for? How about compensation and stability issues? What's the minimal (closed loop) gain? I like its simplicity, but I don't understand the issues above so it's hard to comment now. best regards |
19th June 2005, 10:55 PM | #4 | |
The one and only
Re: Simple(ish) discrete op-amp
sound. |
20th June 2005, 01:14 AM | #5 | |||
diyAudio Member
Join Date: Aug 2004
Location: Behind you
Re: Re: Simple(ish) discrete op-amp
Compensation is not needed. It should be unity-gain stable, with the caveat that comes with current-feedback designs that the resistor from output to feedback node must be present and of sufficiently high value (I haven't worked out the minimum yet). Of course that might be different in reality. Quote:
https://mrevil.asvachin.eu/ |
20th June 2005, 01:34 AM | #6 |
diyAudio Member
Join Date: Jun 2004
Location: Warsaw
I thought J7/J8 were cascodes for bjt VAS and adding another common gate stage (J5/6) doesn't change things much. Do I miss something here? regards |
20th June 2005, 02:11 AM | #7 |
diyAudio Member
Join Date: Aug 2004
Location: Behind you
Well you're right that the BJTs do provide gain, and if the JFETs weren't there then they would work entirely as the Vas, but the JFETs provide gain too, and so are also the Vas.
https://mrevil.asvachin.eu/ |
20th June 2005, 04:59 PM | #8 |
diyAudio Member
Join Date: Feb 2005
Location: Zagreb
In practise, your current mirrors will need emitter resistors. And, when you add them, you can easily multiply current without needing multiple transistors - just divide the corresponding leg emitter resistor with the current multiplier.
Otherwise, it looks very interesting! Let us know how it works for real when you ave the chance to try it out... |
20th June 2005, 05:19 PM | #9 |
diyAudio Member
Join Date: Dec 2004
EVIL'S Intersting CIRCUIT...very imaginative....waiting to get the real life response.....go and build up the discrete opamp fast, nice and easy.......
20th June 2005, 06:32 PM | #10 | |
diyAudio Member
Join Date: Apr 2005
Location: Russia
Re: Re: Re: Simple(ish) discrete op-amp
Excuse, it was very fast the thrown sight, but all the same, there will be a feeling that it to work well.
ilimzn (In practise, your current mirrors will need emitter resistors.) completely I support. |
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