text:
Too Many Cooks Spoil the Broth: How the tragedy of the anticommons emerges in organizations
In organizations, conflict often revolves around commons resources because they are critical for influence, performance, and organizational survival. Research on property rights, territoriality, and social dilemmas suggests that to reduce such conflict, organizations should facilitate the (psychological) privatization of commons resources. We complement these three literatures by drawing from the legal, organizational, and social psychology literatures to model how psychologically privatizing organizational commons resources – to prevent a tragedy of the commons (an overuse problem) – can lead to the emergence of equivalently problematic tragedy in organizations: the tragedy of the anticommons (an underuse problem). Our model contributes to these literatures by conceptualizing a bottom-up behavioral process (in contrast to institutional allocation) of property distribution that leads to the emergence of the tragedy of the anticommons. The implications of this bottom-up behavioral process for property rights theory, territoriality theory, and the social dilemma paradigm are discussed.
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Length: | 45 pages |
Date of creation: | 2012 |
Date of revision: | |
Handle: | RePEc:chu:wpaper:12-14 |
Contact details of provider: | Postal: Phone: (714) 628-2830 Fax: (714) 628-2881 Web page: http://www.chapman.edu/esi/Email: More information through EDIRC |
References listed on IDEAS
Please report citation or reference errors to , or , if you are the registered author of the cited work, log in to your RePEc Author Service profile, click on "citations" and make appropriate adjustments.:
- Daniel J. D'Amico & Walter Block, 2007. "A legal and economic analysis of graffiti," Humanomics: The International Journal of Systems and Ethics, Emerald Group Publishing, vol. 23(1), pages 29-38, February.
- repec:dgr:uvatin:20070018 is not listed on IDEAS
- Messick, David M., 1999. "Alternative logics for decision making in social settings," Journal of Economic Behavior & Organization, Elsevier, vol. 39(1), pages 11-28, May.
- Wade-Benzoni, Kimberly A. & Tenbrunsel, Ann E. & Bazerman, Max H., 1996. "Egocentric Interpretations of Fairness in Asymmetric, Environmental Social Dilemmas: Explaining Harvesting Behavior and the Role of Communication," Organizational Behavior and Human Decision Processes, Elsevier, vol. 67(2), pages 111-126, August.
- Langlois, Richard N., 2002. "Modularity in technology and organization," Journal of Economic Behavior & Organization, Elsevier, vol. 49(1), pages 19-37, September.
- Robert J. Smith, 1981. "Resolving the Tragedy of the Commons by Creating Private Property Rights in Wildlife," Cato Journal, Cato Journal, Cato Institute, vol. 1(2), pages 439-468, Fall.
- Babcock, Linda, et al, 1995. "Biased Judgments of Fairness in Bargaining," American Economic Review, American Economic Association, vol. 85(5), pages 1337-43, December.
- McCarter, Matthew W. & Rockmann, Kevin W. & Northcraft, Gregory B., 2010. "Is it even worth it? The effect of loss prospects in the outcome distribution of a public goods dilemma," Organizational Behavior and Human Decision Processes, Elsevier, vol. 111(1), pages 1-12, January.
- Edella Schlager & Elinor Ostrom, 1992. "Property-Rights Regimes and Natural Resources: A Conceptual Analysis," Land Economics, University of Wisconsin Press, vol. 68(3), pages 249-262.
- Oliver Hart & John Moore, 1988.
"Property Rights and the Nature of the Firm,"
Working papers
495, Massachusetts Institute of Technology (MIT), Department of Economics.
- Hart, Oliver & Moore, John, 1990. "Property Rights and the Nature of the Firm," Journal of Political Economy, University of Chicago Press, vol. 98(6), pages 1119-58, December.
- Hart, Oliver D. & Moore, John, 1990. "Property Rights and the Nature of the Firm," Scholarly Articles 3448675, Harvard University Department of Economics.
- Vinit Mukhija, 2005. "Collective Action and Property Rights: A Planner's Critical Look at the Dogma of Private Property," International Journal of Urban and Regional Research, Wiley Blackwell, vol. 29(4), pages 972-983, December.
- Jeroen Bergh, 2007. "Evolutionary thinking in environmental economics," Journal of Evolutionary Economics, Springer, vol. 17(5), pages 521-549, October.
- Linda Babcock & George Loewenstein, 1997. "Explaining Bargaining Impasse: The Role of Self-Serving Biases," Journal of Economic Perspectives, American Economic Association, vol. 11(1), pages 109-126, Winter.
- Buchanan, James M & Yoon, Yong J, 2000. "Symmetric Tragedies: Commons and Anticommons," Journal of Law and Economics, University of Chicago Press, vol. 43(1), pages 1-13, April.
- Williamson, Oliver E, 1979. "Transaction-Cost Economics: The Governance of Contractural Relations," Journal of Law and Economics, University of Chicago Press, vol. 22(2), pages 233-61, October.
- Fahr, Rene & Irlenbusch, Bernd, 2000. "Fairness as a constraint on trust in reciprocity: earned property rights in a reciprocal exchange experiment," Economics Letters, Elsevier, vol. 66(3), pages 275-282, March.
- Jongwook Kim & Joseph T. Mahoney, 2002. "Resource-based and property rights perspectives on value creation: the case of oil field unitization," Managerial and Decision Economics, John Wiley & Sons, Ltd., vol. 23(4-5), pages 225-245.
- H. Scott Gordon, 1954. "The Economic Theory of a Common-Property Resource: The Fishery," Journal of Political Economy, University of Chicago Press, vol. 62, pages 124.
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The proposed rule to extend the Fair Labor Standards Act's minimum wage and overtime provisions would affect nearly 2 million workers who provide in-home care for elderly and infirm individuals, DOL says.
The comment period will open Dec. 27 for the U.S. Department of Labor Wage and Hour Division's Notice of Proposed Rulemaking that would extend the Fair Labor Standards Act's minimum wage and overtime provisions to nearly 2 million workers who provide in-home care services for elderly and infirm individuals. DOL announced Dec. 15 that the NPRM soon would be published, where it will join a logjam of 162 rules -- including 13 from DOL -- that were pending before the Office of Information and Regulatory Affairs (part of OMB) as of mid-December.
The comment period will close Feb. 27, 2012.
DOL's online page where the announcement is posted says the NPRM "will revise the companionship and live-in worker regulations under the Fair Labor Standards Act to more clearly define the tasks that may be performed by an exempt companion, and to limit the companionship exemption to companions employed only by the family or household using the services. In addition, the Department proposes that third party employers, such as in-home care staffing agencies, could not claim the companionship exemption or the overtime exemption for live-in domestic workers, even if the employee is jointly employed by the third party and the family or household."
When Congress expanded FLSA to "domestic service" workers in 1974, its amendments created a limited exemption from minimum wage and overtime pay requirements for casual babysitters and companions for the elderly and infirm and created an exemption from the OT requirement for live-in domestic workers.
"Although the regulations governing exemptions have been substantially unchanged since they were promulgated in 1975, the in-home care industry has undergone a dramatic transformation," according to DOL. "There has been a growing demand for long-term in-home care, and as a result the in-home care services industry has grown substantially. However, the earnings of in-home care employees remain among the lowest in the service industry, impeding efforts to improve both jobs and care. Moreover, the workers that are employed by in-home care staffing agencies are not the workers that Congress envisioned when it enacted the companionship exemption (i.e., neighbors performing elder sitting), but instead are professional caregivers entitled to FLSA protections. In view of these changes, the Department believes it is appropriate to reconsider whether the scope of the regulations are now too broad and not in harmony with Congressional intent."
A Frequently Asked Questions page about the proposal is available here.
E-Mail this page
Printable Format
2/18: Keeping Perspective Through the Marijuana Culture Shift
INTERMEDIATE 2/26: Health & Safety: Breaking Down the Silos
ADVANCED 3/18: Significant Strategies for Slashing Soft-Tissue Injuries
more webinars

subset: commoncrawl


text:
Next time, install Times+ with 1-click
Learn how MacUpdate Desktop can install apps on MacUpdate with the simple click of the icon. Plus, keep all your apps updated.
Times+ is a small, fast, easy to use timer for keeping track of time spent on projects and events. It can time multiple events at once, even when closed, and start, pause, and reset events. Times+ events can have a unique name, ID, and up to 32K of notes.
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Edit hours
Culver's® is a family-favorite restaurant known for cooked-to-order ButterBurgers, handcrafted Fresh Frozen Custard and Wisconsin Cheese Curds. Welcome to delicious®
They have an awesome staff. Very polite and up beat about stuff. (: their attitudes make you want to come back. :)
If you like bacon blue cheese burgers ask for one here. It's not shown on the menu. But it is in the system, and it is good.


text:
Gardetto's Original Recipe Snack Mix (5.5 oz)
manufactured by
General Mills Sales, Inc.
ingredients (45)
Flour Bleached Enriched ( Wheat Flour , Barley Malted Flour , Niacin Vitamin B3 , Iron , Thiamine Mononitrate Vitamin B1 , Riboflavin Vitamin B2 , Folic Acid Vitamin B9 ) , Wheat Flour , Soybeans Oil , Soybeans Oil Partially Hydrogenated , Rye Flour , Contains 2% or less of the Following: ( , Salt , Sugar , Sesame Seeds , Yeast , Monosodium Glutamate , Colors Added , Corn Syrup , Vegetables Oil ( Canola , Corn , Soybeans ) , Worcestershire Sauce ( Vinegar , Molasses , Corn Syrup , Water , Salt , Colors Added , Garlic Powder , Sugar , Spices , Tamarind , Flavors Natural ) , Maltodextrin , Corn Syrup Malted , Onions , Garlic , Wheat Gluten , Baking Soda , Caraway , Disodium Inosinate , Disodium Guanylate , BHT
ingredients color
• controversial • avoid • non-controversial
members, please sign in to view which ingredients are on your
personalized "avoid" list.
personalized "avoid" list.
things to know
Low in calories per serving
High in sodium per serving
Contains fiber
Contains added sugar(s)
Low in Saturated Fat per serving
Low in cholesterol per serving
This product contains multiple controversial ingredients
no specific warnings are currently known for this product
nutrition facts
Serving Size: 1/2 Cup
Servings Per Container: 5
Servings Per Container: 5
amount per serving:
calories from fat: 70
total calories per container: 750
total calories from fat: 350
% daily value* (DV)
recommended (DV)
total fat 7g
trans fat 1.5g
polyunsaturated fat 0 g
monounsaturated fat 0g
potassium 0mg
total carbohydrate 18g
protein 3g
Weight Watchers Winning Points® Value* = 3
Weight Watchers PointsPlus® Value* = 4
Weight Watchers PointsPlus® Value* = 4
*Weight Watchers® and Points® are registered trademarks of Weight Watchers International, Inc. The number of Points provided here were calculated by Food Facts, Inc. based on published Weight Watchers International, Inc. information and do not imply sponsorship or endorsement of such number of Points, Food Facts, Inc., or the above product by Weight Watchers International, Inc.


text:
Windows Help
It's free to register, to post a question or to start / join a discussion
Have a disgusting site showing up
Likes # 0
Posted December 25, 2011 at 4:51AM
don't know why searchtigo.com is always there when i open my link, this is really rediculous
Likes # 0
Posted December 25, 2011 at 6:01AM
It is not a simple site, it's a trojan infection, it has already controlled your browsers, see the description of it here,you can use the steps to remove it
Likes # 0
Posted December 25, 2011 at 7:16AM
Can I suggest that you disable your system restore temporarily, then run the free Malwarebytes programme before you attempt any registry changes. When your PC is safe again don't forget to re-enable your system restore.
Likes # 0
Posted December 27, 2011 at 8:29PM
It's also worth running hijackthis and posting the results on their forum as this type of infection can crawl into other system areas. Google hijackthis.
Likes # 0
Posted December 28, 2011 at 6:58PM
hijackthis - download from here but use with caution enter link description here
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Root Catalog
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Filtex 12 Gallon Central Vacuum Cleaner Micro-lined Bags, 4 Pack.
$12.95These are 4 generic Filtex central vacum cleaner bags made by DVC. Each bag is approximately 12 gallons in capacity. Fits Original Filtex part number 12G. Filtex models that use this bag include; TC600L, TM285L, TS300L, TSP300L, S300, SP700, 400, 500, 500 Learn More -
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$46.99These are 9 genuine Frigidaire Central Vacuum Cleaner Filteraire Bags, Frigidaire part number 54585. These bags fit Frigidaire central vacuum models; FGCV550SQ, FGCV520SQ, FGCV460SQ, FGCV315SQ, FGCV319SQ, FGCV212SQ, FCV520S, FCV460S, FCV212S, FCV315S, as Learn More -
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SparkRecipes is powered by
Quick & Easy, kids love them too!!Submitted by: JWJMLRBAS
Great for a party. It's actually something low fat to munch on!
This recipe can serve as a tasty snack or lite lunch.Submitted by: TURTAPOE
Submitted by: LAURIEWY
Very tasty, colorful vegi pinwheel appetizerSubmitted by: ABLOCHA
Submitted by: SINGGAIL
Submitted by: JOECRACK
Submitted by: EDCOOPER1
Super easy and delicious~!This is a healthy snack you and your family and friends will enjoySubmitted by: FAITHSONGLADY
Submitted by: STACEYA7
Submitted by: IMTHE1
A delicious low carb, low fat, high protien meal.Submitted by: MYLINDA142
Try these little appetizers at your next party.Submitted by: DAMA_MARIE
Wonderful way to hide spinach from your "picky" kids. :) Really taste good too. Submitted by: KARYNCRAMER
Submitted by: WALKERPO3
Chill (not cook) for 2 hours!Submitted by: HOLLY1294
Quick and easy, kids love them too!Submitted by: JWJMLRBAS
A fun appetizer!Submitted by: JUSTMEJEN
Submitted by: MEGANNOBLE24
Great & easy appetizerSubmitted by: BRITTANY83
Can be either a complete meal or served as an appetizer or SnackSubmitted by: NANCYJAC
Submitted by: CVESCIO
a snack that is quick, easy, healthy, and tasty!Submitted by: XAPHONIAX
Great appetizer for any occasion!Submitted by: ESLAUGHENHOUP
A fun snack or party appetizer!Submitted by: AETERNE
Yummy Li'l SnacksSubmitted by: SPRTWARRIOR
Great appetizer, especially around Christmas with red pimento and green chilis!Submitted by: NACOLE_2004
The pic is NOT the actual food! Just an example of what they're supposed to look like, These will be thicker though! About an inch. Bought these from the store, guessing on ingrediants to figure out cal/fat content. WONDERFUL! Will definately prepare these myself one day, using LOW or NON fat mozzarella cheese instead!!! And skipping the little bit of seasoned bread crumbs on the outside. They added nothing to it. The inside was all you need to make this dish scrumptious!This recipe is for full fat Mozz. Cheese!!! If you make this you will need to edit this!!! Most of the fat/sat. fat is from the cheese!!! DEFINATELY get some low fat mozzarella!Submitted by: QTCOLEY
Quick and Easy Snack or Appetizer!Submitted by: UNIQUECHAR
A dramatic and delicious dinner to share with someone special or to add some pizzaz at your next backyard barbeque!Enjoy with salmon or use any other firm fish fillets (ie Tilapia).


text:
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text:
Look-N-Cook: Caramel Apples
Makes 10-12 apples
list: 2 bags Kraft caramel bits
2-4 tablespoons water
10-12 apples (Granny Smith, Gala, Honey Crisp, Pink Lady)
10-12 wooden craft sticks
- Colored sprinkles, mini chocolate chips, chopped nuts, M&Ms, crushed Oreos or graham crackers, each in separate bowls
1. In a microwave-safe bowl combine the caramel bits and water. Microwave 3 minutes, stirring every 60 seconds; avoid overcooking.
2. Plunge a craft stick into the stem-end of each apple. Dip the apples in the caramel, coating 2/3 of each from the bottom up.
3. Shake off excess before rolling the bottom half of each apple in your choice of sprinkles, chocolate chips, etc. Place apples on waxed paper and refrigerate to set.
Note: For a special party favor or bake sale contribution, wrap chilled apples in cellophane.
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Sesame Street Special: The Cookie Thief
Discuss "The Cookie Thief", an all-new one-hour Sesame Street special. "The Cookie Thief" also features the farewell performance of veteran Muppeteer Fran Brill.
Dogtoon Media
New Member, Male, 33
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text:
These analogies are hilarious rat ramming = algorithmic trading which makes people and rats depressed. I like this show, but basically all I notice anymore is that elites are sucking up the wealth and the masses are too apathetic/stupid to organize to do anything about it. God damn, this collapse is taking forever.
In this episode of the Keiser Report, Max Keiser and Stacy Herbert discuss HFT and QE3 rat-bots chasing and bullying the world into a Great Depression. They also discuss the dangerous situation of France once again becoming a peripheral country to German. In the second half of the show, Max Keiser talks to Pierre Jovanovic, French radio talk show host and author of Blythe Masters, about the smell of not napalm but revolution in the air in France where unemployment is worsening, suicides by jumping in front of a train are up drastically and Goldman Sachs says workers need to cut their pay by 30%. They also discuss history repeating itself as Germany once again finds itself looking for its gold as in Wagner's Das Rheingold.
Agenda 21 -- The Depopulation Agenda For a New World Order
We are constantly inundated with poisons forced on us through GMO foods,
pharmaceuticals, fluoridated water supply, microwave radiation, and


text:
February 24th – March 3rd, 2015
This week's live music, theatre, and independent film in Sedona.
Featured Sedona Entertainment
Chamber Music Sedona
Chamber Music Sedona's mission is to preserve and foster the appreciation of chamber music in its many forms by producing world-class concerts, and by presenting and supporting community music education programs. Chamber music is the most intimate form of musical expression–grand music on a small scale. Check the Chamber Music Sedona website or call 928.204.2415 for more information.
Live Entertainment at REDS Restaurant and Lounge
REDS Restaurant and Lounge, located at the Sedona Rouge Hotel & Spa in West Sedona is acclaimed for its lively and comfortable atmosphere and features live evening entertainment daily.
Upcoming Entertainment:
- Wednesday, Feb. 25, Eric Williams, 6pm
- Thursday, Feb. 26, Eric Williams, 6pm
- Friday, Feb. 27, Nick Gioello, 6pm - 8pm
- Saturday, Feb. 28, Devin Terreson, 6pm - 8pm
- Sunday, Mar. 1, live music, 6pm - 8pm
- Monday, Mar. 2, live music, 6pm - 8pm
- Tuesday, Mar. 3, live music, 6pm - 8pm
Plus, Tuesdays feature a Prime Rib Special and Wednesdays feature $5 wine by the glass.
Olde Sedona Bar and Grill Entertainment
When you are in Sedona and looking for fun and entertainment Olde Sedona Bar & Grill is the place to be! With live bands, DJs and Karaoke, and sports on the 7 big screen TVs all the time, there's always something good going on in this lively restaurant, sports bar, and entertainment venue. Eat, drink and have fun where the locals' hang out, the Olde Sedona Bar & Grill!
Upcoming Entertainment at Olde Sedona:
- Tuesday, February 24 - All Star Karaoke, 9pm
- Friday, February 27 - Free Jukebox
- Saturday, February 28 - To be announced
- Sunday, March 1 - Karaoke, 9pm
- Monday, March 2- Jam Session, Open Mic, 9pm
- Tuesday, March 3 - All Star Karaoke, 9pm
Happy hour specials daily 4 - 7 pm daily. Half price appetizers and drink specials. 7 big screen TVs with sports on all the time.
Blazin' M Ranch
Chuckwagon Supper and Stage Shows Every Wednesday through Saturday Nights
For more than twenty years Blazin' M Ranch has been providing visitors and locals alike with memories to last a lifetime! Come for the chuckwagon supper and western stage show, hang around for an authentically replicated Western town with an abundance of attractions and activities sure to delight and entertain! Check out the shooting gallery, get some ropin' lessons, ride a vintage tractor pull; visit the saloon, one of a kind museum, Old-Tyme photo studio and boutique Western shops, all just twenty minutes from Sedona! Don't miss a visit to the Blazin' M Ranch, where "happy trails" are just the beginning.
Check the Blazin M Ranch's website for more details, or call 800.937.8643 if you have any questions.
Sound Bites Grill Entertainment
Sound Bites Grill is the fun place to eat, drink, and enjoy top quality live entertainment in Sedona. It's a unique dining and supper club experience with amazing red rock views, great all natural fresh healthy foods, and stimulating entertainment. In the Hyatt Shops at Pinion Pointe at the junction of Highways 89A and 179 , Sound Bites also offers dinner specials on Tuesdays, wine tastings on Thursdays, and very special "Supper Club" dinner shows, unique to Sedona. Come in for lunch or dinner with a view, and check out the Guitar Gallery while you are there. You'll leave satisfied and smiling!
- Wednesday, Feb. 25, Robin Miller, 6-9pm
- Thursday Feb. 26, Ralf Illenberger, 6-9pm
- Friday, Feb. 27, Green Light, 7pm, $5 cover
- Saturday Feb. 28, Graffiti Gold, 7-10pm, ticketed show
- Sunday, Mar. 1. Steve Sandner Jazz Trio with Special Guest, 6-9pm, $5 cover
Call 928.282.2713 or check out their website and Entertainment Calendar for more details.
To list your entertainment event on this page call 928.282.1396 or email us.


text:
US 6156665 A Abstract The specification describes a trilevel resist technique for defining metallization patterns by lift-off. The trilevel resist comprises two standard photoresist levels separated by a thin silicon oxide layer with approximate composition SiO2.
Claims(13) 1. A process for the manufacture of semiconductor integrated circuit devices which includes at least one step of forming a metallization pattern on a III-V semiconductor substrate the method comprising:
a. depositing a first resist layer of a polymer resist material on said III-V semiconductor substrate, b. depositing by electron beam evaporation an intermediate layer over the first resist layer, said intermediate layer comprising at least SiOx where x is in the range 1.8-3.0, c. depositing a second resist layer of a polymer resist material on said intermediate layer, d. lithographically patterning said second resist layer with a metallization pattern, e. transferring said metallization pattern to said intermediate layer by etching said intermediate layer using said patterned first resist layer as a mask, f. transferring said metallization pattern to said first resist layer by patterning said first resist layer using said intermediate layer as a mask, thereby exposing regions of said III-V semiconductor substrate, g. depositing a layer of metallization over said second resist layer with portions of said metallization layer depositing on said exposed regions of said III-V semiconductor substrate and portions of said metallization layer depositing on said second resist layer, and h. removing said first and second resist layers, said intermediate layer, and said portions of said metallization layer on said second resist layer by dissolving said first and second resist layers thereby leaving said portions of said metallization layer on said exposed portions of said III-V semiconductor substrate. 2. The process of claim 1 wherein the intermediate layer has a thickness in the range 700-1300Å.
3. The process of claim 1 wherein the second resist layer is a photoresist material.
4. The process of claim 1 wherein said intermediate layer comprises approximately 32 mol % Si+64 mol % O2 +1 mol % Al+3 mol % B.
5. The process of claim 1 wherein the step of patterning the first resist layer comprises exposing regions of the first resist layer to actinic radiation using said intermediate layer as a mask, and removing said regions using a plasma etch.
6. The process of claim 5 including the additional step of treating the patterned first resist layer with resist developer to remove portions of said first resist layer under said intermediate layer thereby producing an undercut in said first resist layer.
7. The process of claim 1 in which the said III-V semiconductor substrate comprises a multilayer stack of III-V semiconductor material.
8. The process of claim 7 in which the substrate includes at least one semiconductor mesa.
9. The process of claim 1 in which the intermediate layer is etched using a plasma.
10. The process of claim 9 in which the plasma is a CF4 /O2 plasma.
11. A process for the manufacture of semiconductor integrated circuit devices which includes at least one step of forming a metallization pattern on a III-V semiconductor substrate the method comprising:
a. depositing a first resist layer of a polymer resist material on said III-V semiconductor substrate, b. depositing an intermediate layer over the first resist layer using an evaporation process, said intermediate layer comprising at least 96 mol % SiOx where x is in the range 1.8-3.0, said intermediate layer additionally having a thickness in the range 700-1300Å, c. depositing a second resist layer of a polymer resist material on said intermediate layer, d. lithographically patterning said second resist layer with a metallization pattern, e. transferring said metallization pattern to said intermediate layer by etching said intermediate layer using said patterned first resist layer as a mask, f. transferring said metallization pattern to said first resist layer by patterning said first resist layer using said intermediate layer as a mask, thereby exposing regions of said III-V semiconductor substrate, g. treating the patterned first resist layer with a wet etchant to remove portions of said first resist layer under said intermediate layer thereby producing an undercut in said first resist layer, h. depositing a layer of metallization over said second resist layer with portions of said metallization layer depositing on said exposed regions of said III-V semiconductor substrate and portions of said metallization layer depositing on said second resist layer, and i. removing said first and second resist layers, said intermediate layer, and said portions of said metallization layer on said second resist layer by dissolving said first and second resist layers thereby leaving said portions of said metallization layer on said exposed portions of said III-V semiconductor substrate. 12. The process of claim 11 in which the said substrate comprises a multilayer stack of III-V semiconductor material.
13. The process of claim 11 wherein the wet etchant is photoresist developer.
Description This invention relates to lithographic methods for defining metallization patterns using lift-off techniques. Lift-off processes are well known in semiconductor device manufacturing. They were used early in silicon LSI processing until etch processes became the techniques of choice for VLSI technology. Etch processes can provide high definition patterns if the etch selectivity between the material being etched and other exposed materials is high. Etch techniques have been developed in silicon technology that provide good etch selectivity for the material systems of interest, but acceptable etch selectivity in III-V processing has been difficult to obtain. Accordingly, lift-off patterning techniques are used in critical patterning steps in the manufacture of many Ill-V devices. In III-V device technology, the surface topography is typically severe. Vertical steps may be comparable in dimension to the spacing between features being defined. This is partly attributable to the fact that bipolar transistors are prominently used in III-V integrated circuits, and bipolar devices typically have mesa structures. Due to this factor multi-level resists, with at least one planarizing level, are typically used for lift-off in III-V IC processing. Because surface topography in III-V device technology is so severe, edge definition becomes a critical issue. If the aspect ratio (height to width) of features being defined is large, variations in edge definition, which can be comparable in size to the feature thickness, may span the spacing between features. If that occurs, shorts result. Much effort has gone into development of bilayer and trilayer resist schemes to overcome these problems. Bilayer processes involve a dual resist scheme, with a thick underlying resist for planarizing the structure, followed by another type of resist or contrast enhancement layer. The upper resist layer typically forms an overhang on top which is a common feature of multilayer resist processes. The overhang creates a positive discontinuity between regions of the deposited metallization layer as it steps from one level to another. The discontinuity insures lift-off of the metal deposited on the upper level of the multilevel resist. Two layer resist schemes have drawbacks, often caused by mixing of the resist materials, thereby impairing edge definition and making it difficult to obtain a uniform overhang over large areas. See S. Zhang, et al, 4th International Conference on Solid-state and Integrated Circuit Technology, Proceedings (Cat. No. 95TH8143), G L Baldwin, Z Li, C C Tsai, and J. Zhang, ed. New York, N.Y. IEEE p. 41-43 (1995). In addition, some two layer processes use chlorobenzene, a hazardous and environmentally undesirable material. See R. Williams, Gallium Arsenide Processing Techniques (Artech House, Dedham, Mass., 1984), and P Kalee Prasad and J Narain, "Improved Lift-off Techniques for Thick Aluminum Metallization", Semiconductor Devices (Proc. SPIE Vol. 2733), K Lai, ed (Narosa Publishing House, New Delhi, India) 499 (1995). Three layer resist processes avoid the resist mixing problem by using an intermediate transfer layer to segregate the resist layers. See for example, "Lift-Off Process for Achieving Fine-Line Mettalization", A A Milgram, J. Vac. Sci. Technol. B1 (2), 490 (1983); "Trilayer Lift-Off Metallization Process Using Low Temperature Deposited SiNx ", J R Lothian, F Ren, S J Pearton, U K Chakrabarti, C R Abernathy and A Katz, J. Vac. Sci. Technol. B10 (6), 2361 (1992); S P Lyman, J L Jackel and P L Liu, "Lift-off of Thick Metal Layers Using Multilayer Resist", J. Vac. Sci. Technol. 19 (4), 1325 (1981). But trilayer resist processes also have drawbacks. Some of the techniques described in the references cited above use a Ge transfer layer. Ge transfer layers obscure wafer alignment marks, thus limiting the use of stepper based technology. Ge is also difficult to see through when using contact lithography. Moreover, many trilayer techniques involve the use of thick planarizing layers as the first layer, which may not be compatible with the solvent systems used with resists such as polymethylglutarimide (PMGI). We have developed a three layer lift-of process that produces outstanding edge definition, and does not suffer from the problems outlined above. The three layers are two resist layers separated by a transfer layer with the approximate composition SiO2. FIG. 1 is a schematic diagram of a Double Heterostructure Bipolar Transistor (DHBT) device fabricated using the technique of the invention; and FIGS. 2,3,4,5,6,7,8 and 9 are schematic views representing steps in the lift-off process of the invention as applied to the device of FIG. 1. The lithographic lift-off technique of the invention will be described in the context of a process for the fabrication of III-V DHBT devices. However, it will to be appreciated by those skilled in the art that the lift-off technique has broad application to semiconductor device fabrication, and especially to III-V multilayer heterostructure devices with severe topological features, e.g. mesa structures. Referring to FIG. 1, a completed DHBT device 11 of the kind for which the process of the invention is particularly intended is shown. The device has a multilayer semiconductor heterostructure stack which is shown here with seven semiconductor layers 12-18. The multilayer stack may be grown by Metal-Organic Molecular Beam Epitaxy (MO-MBE) using standard growth techniques known in the art. A general description of the MO-MBE process can be found in M. B. Panish and H. Temkin, "Gas Source Molecular Beam Epitaxy", Chapter 4, Springer Series in Materials Science, Vol. 26, Springer-Verlag 1993, which is incorporated herein by reference for details of the process. The MBE growth technique is ideal for making heterostructures because very complex multilayer stacks can be produced in a substrate wafer in a series of sequential growth steps in a vacuum apparatus without breaking the vacuum and handling the wafer. Thus all of the layers in the stack are completed before the device fabrication sequence begins. Referring to FIG. 1, the substrate layer 25 is semi-insulating InP on which the series of semiconductor layers 12-18 are sequentially grown. Some of these layers comprise a sub-series of graded layers as will be described. However, for clarity and simplicity in the description only the seven functional layers are shown. In the context of processing the multilayer stack, the layers that comprise graded sub-layers are processed as if they were a single layer. The first grown layer 12 is a 4000 Angstrom In0.53 Ga0.47 As subcollector layer doped n+ with a dopant concentration of 3�1019 cm-3. The n-type dopant used in this process was Sn, although other n-type impurities such as Si can be used. The subcollector layer 12 also includes buffer layers to prevent updiffusion of impurities in the multilayer structure. The buffer layers comprise a 200 Å In0.53 Ga0.47 As, n-doped at a level of 1�1018 cm-3, and a 20 Å undoped In0.53 Ga0.47 As layer. The collector layer 13 is a 5000 Å layer of n-InP doped to a concentration of 3�1016 cm-3. In the heterostructure transistor described here, both the emitter-base and collector-base regions are graded using graded quaternary InGaAsP layers. The graded quaternary layers separating the collector and base is shown at 14, and comprise a 130 Å InGaAsP (1.13 eV) layer, and a 130 Å InGaAsP (0.95 eV) layer. The quaternary layers had a doping level of 1�1017 cm-3. Buffer layers comprising a 300 Å In0.53 Ga0.47 As layer n-doped to 1�1017 cm-3, and a 200 Å undoped In0.53 Ga0.47 As layer, separate the graded layer 14 from the base layer 15. The base layer 15 is 900 Å of In0.53 Ga0.47 As doped to a concentration of 3�1019 cm-3 with carbon. The emitter side of the base also has a quaternary graded layer 16, made Up of a 70 Å of InGaAsP (0.95 eV) layer, and a 70 Å InGaAsP (1.13 eV) layer. The emitter layer 17 is 500 Å of InP n-doped to a concentration of 5�1017 cm-3. The top semiconductor layer 18 is a contact layer consisting of 2500 Å of In0.53 Ga0.47 As doped n-type with a concentration of 3�10.sup. cm-3. A metal contact 19 is selectively applied to the top semiconductor contact layer 18 by a lift-off technique. The metal contact 19 is 100 Å Pd+200 Å Pt+1000 Å Au, and during fabrication serves as an etch mask in a self-aligning mode. The lateral dimensions of the metal layer are approximately 3�5 μm. The top semiconductor contact layer 18 is etched using the metal contact layer 19 as an etch mask. A wet etchant is used. An overetch is performed to obtain an undercut of 5000 Å under the metal contact, leaving an area of approximately 2�4 μm in InGaAs contact layer 18. This patterned contact 18 then serves as the etch mask for the emitter layer 17. The InP emitter layer is then wet etched. The base contact 21 is applied by evaporating 100 Å Pd+200 Å Pt+800 Å Au using the metal contact 19 as a shadow mask to define the inner edge of the base contact. The metal base contact layer also deposits on the metal emitter contact 19 as shown. Metallization for layer 21 is deposited using a lift-off process, which defines the outer edges of the base contacts. The structure is then encapsulated and the encapsulant patterned to define the base-collector mesa. The encapsulant is applied by spinning Accuglass� 211 at 2000 RPM onto the surface to produce a 0.26 μm layer of polymer encapsulant, and curing the polymer by heating to 300� C. for 10 min. During curing of the spin-on polymer the metal base contact is annealed sufficiently to make ohmic contact through the thin quaternary graded layer 16 to the base layer 15. The exposed portions of the graded quaternary layer 16 for the emitter-base region, the base layer 15, the graded quaternary layer 14 for the base-collector region, and approximately half the thickness of the collector layer 13, are all sequentially ECR plasma etched using BCl3 /N2. The remaining thickness of collector layer 13 is selectively wet etched, and overetched to produce a substantial, e.g. 2 μm, undercut as shown in FIG. 1. This undercut serves to reduce the collector-base capacitance of the device. The use of both wet and dry etching in the process allows the advantages of both techniques to be realized. Plasma etching is convenient, and wet etching is rapid and more selective. Moreover, using a wet etch following a plasma etch tends to remove surface damage caused by plasma exposure. The plasma etch steps in this work used ECR plasma processing in a Plasma-Therm SLR 770 system. Etching is performed at room temperature, at a bias of -80V d.c., a μ-wave power of 250 W, and a pressure of 2 mTorr. Flow rates in sccm are 12 BCl3 +3 N2. Plasma etch rates are about 150 Å/min for this etch chemistry. Selective wet etching is performed at 4� C. with 1:1:15 H3 PO4 :H2 O2 :H2 O, for InGaAs and 1:1:1 HCl:H3 PO4 :H2 O, for InP. Etch rates are 1000 Å/min and 800 Å/min, respectively. The collector contact layer 12 is then patterned leaving an edge portion thereof accessible for the deposition of collector contacts 23 as shown in FIG. 1. The collector contact is 100 Å Pd+200 Å Pt+7000 Å Au. The finished mesa structure is then passivated and encapsulated with a common layer 24, i.e. a polymer encapsulant. Due to the thickness required to cover the mesa and the emitter and base contacts, i.e 1 μm, the encapsulant may be applied in two steps. The device structure is completed by plasma etching via holes through encapsulant layer 24 to the collector, base and emitter metallization respectively, and evaporating metal contacts 26 into the via holes as shown. The above described process typically uses three lift-off metallization steps, one to define the emitter contact, another to form the base contacts, and a third to form the collector contacts. For the purpose of this description, just one of these steps--deposition and patterning of the metallization for the base contacts--will be illustrated. The point in the fabrication sequence where this metallization step occurs is after patterning of the emitter layer 17, which exposes the emitter/base buffer layer 16 as shown in FIG. 2. At this point the three level resist of the invention is applied. FIG. 2 shows the first level 31 of the three levels, which is blanket deposited over the emitter mesa and the exposed buffer layer. Level 31 is a layer of standard photoresist such as AZ5209 or AZ4210. The developer used with this resist is also standard, e.g. AZ developer. The resist is spun on in the conventional manner and oven baked at 90�C. for 30 minutes. The thickness of the first level will vary depending on the metallization step. For example, in the first lift-off step, used to define the emitter contact, the first level may be relatively thin, since the metal layer thickness is typically lo substantially less than 1 μm and there is essentially no topography at this stage in the process. Later metallization layers are applied over substantial topography, and the metallization itself is typically thicker, i.e. of the order of 1 μm. Accordingly, for the lift-off step illustrated in the figures, the first level 31 is typically 2-5 μm. The second or intermediate level 32 of the trilevel resist is SiO2 with a thickness substantially less than the thickness of the first level 31, i.e. within the range 700-1300 Å. The SiO2 layer, shown at 32 in FIG. 3, is evaporated using conventional techniques. The films evaluated in the work described here were evaporated using an Airco-Temescal e-beam evaporator at a gun bias of 10 KeV, a base pressure of 1�10-7 Torr, and a deposition rate of 2 to 6 Å/s. The film compositions were determined by Auger spectroscopy in a Perkin Elmer PHI610 Scanning Auger Microprobe at a bias of 5 KeV. Thickness measurements were performed by stylus profilometry using a DEKTAK 3030ST. After deposition of the SiO2 intermediate layer, the third level 33 of the trilevel resist is deposited as shown in FIG. 4. The thickness of the third level is sufficient to etch the desired pattern in the second level 32, i.e. typically 0.5-3 μm, and preferably 0.7-1.5 μm. The upper resist level 33 is then exposed, and developed, forming the desired pattern with the outer edges of the base contacts as indicated at 35 in FIG. 5. The patterned layer is oven baked 30 min at 90�C. Using the patterned resist 33 as a mask, the SiO2 layer 32 is plasma etched at room temperature in a Micro-RIE parallel plate etching system to produce the structure shown in FIG. 6 with the lithographic pattern in the upper resist layer transferred to the intermediate SiO2 layer. The plasma etching procedures described here are well known in the art and a variety of process parameters can be used to obtain the desired results. For example, for the SiO2 layer etch a CF4 /O2 plasma at 50 W and 250 mTorr can be used. A 50% overetch after end point is used to ensure clearing. Portions of the resist layer 31 exposed after etching the SiO2 layer 32 are removed as shown in FIG. 7 by flood exposure, and then plasma etching with an O2 plasma. The O2 plasma etch is standard, e.g. 50 W and 250 mTorr, and a resist removal rate of �1000 Å/min. A subsequent undercut of the lower resist level of 0.5 μm to 1 μm is obtained by a wet etch using spray developer. Since the intermediate SiO2 layer is not etched in the O2 plasma or the resist developers used to pattern layer 31, and to undercut layer 33, precise feature definition is retained. After patterning of the trilevel resist layer, metallization layer is blanket deposited over the resist pattern as shown in FIG. 8. The metallization deposits in a discontinuous layer, i.e. portions 21 as shown, due to the substantial vertical steps between the features on the substrate surface. The undercut in emitter layer 17 and emitter contact layer 18 also aids in ensuring that base metal contacts 21 are spaced from the unwanted portions 33 of the lift-off metallization layer. The lift-off metallization layer may be any suitable conductive material. In the technology described in detail here the base contact is Pd/Pt/Au and the metallization for interconnect levels is Ti/Pt/Au. The thickness of the layer is typically 0.1-1 μm. The trilevel resist is then removed with a standard resist solvent such as acetone using a 30 min soak and gentle spray rinse. While the silica intermediate level is not readily soluble in resist solvents, it lifts off on dissolution of the lower and upper polymer resist layers. The unwanted portions 33 of the metallization layer lifts off simultaneously. The structure after lift-off is shown in FIG. 9, which is the intermediate stage of processing the device of FIG. 1 mentioned earlier. The important feature of the trilevel resist technique of the invention is the intermediate SiO2 layer. Therefore the composition, plasma etching characteristics, and stress levels, of this layer were thoroughly analyzed. Auger analysis was used to determine composition, and stress measurements were performed using a Frontier Semiconductor Measurements Inc., FSM8800. The compositions of the intermediate layer were nominally SiO2 but were slightly off stoichiometry. The film composition is dependent on the crucible charge. Two silica crucible charges were used for these evaluations, Vycor� and fused silica. The composition of Vycor by mol % is 32% Si+64% O2 +1% Al+3% B. The silica crucible composition was essentially stoichiometric i.e. 33.3% Si, 66.7% O. The compositions in the evaporated films were somewhat oxygen rich. The Vycor charge produced a film composition of 27% Si+70% O2 +2% Al+1% B. The silica charge produced films of 31% Si+69% O. However, using this evaporation technique the film compositions from sample to sample or layer to layer were very consistent. It is evident from the stoichiometric variations from source to substrate that oxygen in the source will become depleted after several depositions. Consequently, consistency of the process is improved if the source material is changed frequently, preferably after each deposition. It was found that even though the two compositions just described are very similar, the Vycor composition is easier to deposit since it out-gases less during initial warm up and during deposition. This allows a lower system pressure during deposition, i.e. 2�10-7 Torr for Vycor, compared with 2�10-6 Torr for SiO2. Plasma etch rates are similar for both materials, 540 Å/min and 640 Å/min for Vycor and SiO2 respectively. Stress in the films is determined by comparing the wafer bow, or radius of curvature, before and after SiO2 deposition, using the relationship σ=Eh2 /(1-ν)6Rt where σ is the stress in dynes/cm2, E is Young's modulus, h is the substrate thickness, ν is Poisson's ratio, t is the film thickness, and R is the radius of curvature of the substrate. The thickness of the SiO2 film was found to be important to the success of the process. It has to be thick enough to hold the pattern without breaking off when the underlying resist is undercut, and also thin enough to retain dimensional stability. However, if the film is too thick excessive stresses develop and the film will warp or crack during patterning. The threshold stress for the onset of problems with the SiO2 intermediate level is of the order of 1-2�109 dynes/cm2 compressive, which corresponds to an approximate thickness range of 800-1200 Å. The Vycor films have approximately 30% less stress than the nominal silica films for the same thickness. Films thinner than 700 Å tend to crack in the spray development step used to form the undercut. Films thicker than 1300 Å tend to warp during patterning. To evaluate the merits of the choice of silica deposition techniques, films produced according to the foregoing procedures were compared with films produced by plasma enhanced chemical vapor deposition (PE-CVD). Films with nominal SiO2 composition were PE-CVD deposited at low temperature, i.e. 50� C. These films were deposited at an RF frequency of 13.86 MHz and a power of 60 W, in a chamber at 500 mTorr, using 400 sccm of 2%SiH4 in N2 and 1800 sccm of N2 O. Although the PE-CVD SiO2 can be patterned and etched, the lower resist level is hardened by exposure to UV radiation from the plasma. This hardening renders the film essentially insoluble in the spray developer used to produce the undercut. SEM cross sections used to evaluate the procedures described here showed extremely clean edges on the deposited metal, especially at the outer edges of contacts 21 (FIG. 8). This is attributable in part to the high resolution openings formed during patterning of the trilevel resist due to the SiO2 layer 32. Use of the lift-off technique of the invention results in fewer shorts and other interconnect defects in finished electrical devices, and thus improves yields and lowers device costs. An advantage of the invention is that the resist materials that comprise two of the three layers of the trilevel resist are standard and are processed using conventional steps and materials. The resist materials can be known photoresists, e-beam resists, x-ray resists, or ion beam resists, depending on the choice of method used to expose the top layer of the trilevel resist. These resist materials are typically polymer materials that can be patterned by crosslinking that is stimulated by least one of the known forms of actinic radiation. For effective lift-off processes they are soluble in a liquid solvent. For the purpose of definition materials that have the foregoing properties are termed "lift-off resists". It will occur to those skilled in the art that while it is important for the top resist layer to be patterned by a lithographic technique the lithographic properties of the bottom resist layer may be less important. The bottom layer can be patterned by flood exposure using the intermediate layer as a mask and developing as indicated above. Under some circumstances, and with suitable polymer materials, the bottom layer can be patterned by etching directly without actinic exposure. Another alternative is to crosslink the first resist layer by flood exposure before the intermediate layer is deposited. However, the creation of a significant undercut in the bottom resist layer is a useful expedient, and is conveniently achieved using liquid developer. In this case it is desirable to use the preferred sequence as detailed above, i.e. to lithographically pattern the bottom layer, which allows the exposed material to be plasma etched, and the unexposed material to be easily removed by developer to produce the undercut. As mentioned earlier, the SiO2 layer which forms an important aspect of the trilevel resist technique of the invention is nominally SiO2 but may vary somewhat from the stoichiometric composition. Thus as defined herein materials useful for the intermediate layer comprise silicon oxide with the formula SiOx, where x is in the range 1.8-3.0, and preferably 2.0-2.7. These values define the composition of the deposited film. The source composition may be slightly different. Various additional modifications of this invention will occur to those skilled in the art. All deviations from the specific teachings of this specification that basically rely on the principles and their equivalents through which the art has been advanced are properly considered within the scope of the invention as described and claimed. Patent Citations
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Selected Community Events
SEACT Presents Les Miserables
Dothan Opera House
In its 40th Anniversary year, SEACT marks the occasion with this challenging production, filled with local talent on stage, back stage, and in the orchestra pit. Les Misérables is an epic and uplifting story about the survival of the human spirit. The modern classic is based on Victor Hugo's novel, and features one of the most memorable scores of all time.
With more than 80 on stage, 16 in the orchestra, and another 50 volunteers back stage and off stage, Les Misérables is one of the largest undertakings by SEACT in its history. Each performance runs 2 hours, 45 minutes with one intermission. SEACT considers the content "PG-13." The show includes mild language and adult situations.
Tickets are available online at www.SEACT.com or by contacting the Dothan Civic Center Box Office (334) 615-3175. The box office is open 8:30 – 4:30 PM weekdays, and located on the second floor of the Dothan Civic Center. Tickets are $25 for adults and $23 for students/seniors 65+/military with ID. Performances are at 7:00 PM Mar. 9-14 and 2:00 PM Mar. 14-15. The lobby opens at 6:00 PM with tickets on sale if the performance is not sold out. Reserved seating begins at 6:30 PM.
Jennifer Love Doherty
Southeast Alabama Community Theatre
Office Hours 9:00 AM – 1:00 PM weekdays
(334) 794-0400
The Hallelujah Girls
Wallace Community College, Dothan Alabama
Join Wallace Community College's Fine Arts department as they present the joyful, side-splitting comedy, The Hallelujah Girls.
After the recent death of a friend, the feisty females of Eden Falls, Georgia, decide there is no time like the present to pursue unfulfilled dreams. So, they convert an abandoned church into a day spa. They find it hard to pursue their dreams when the mundane details of their daily lives and old rivalries get in the way.
Don't miss this show April 2-3, at 7:00 p.m. in Bencze Theatre, on the Wallace Dothan campus. Tickets can be purchased at www.wallace.edu or at the box office one hour prior to the show. $5.00 for general admission and $3.00 student admission. If you require accommodations under ADA, please contact Dr. Thomas Maple at 334-556-2616 at least two weeks prior to the show. This show will make you laugh out loud and shout, "Hallelujah!"
Savannah Granberry
Theatre Director
Seven Brides for Seven Brothers
Enterprise High School Performing Arts Center
Boisterous Fun & Romance!
Brings Back the Glory Days of the Movie Musical!
Seven Brides for Seven Brothers tells the story of Millie, a young bride living in the 1850's Oregon wilderness, who plans to civilize and marry off her six rowdy brothers-in-law to ensure the success of her own marriage. The plan backfires when the brothers kidnap six women from a neighboring town to be their brides. This musical performance is all boisterous fun and romance. "Goin' courting" has never been as rambunctious as in this rip-roaring stage version that harkens back to the glory days of the movie musical.
TICKETS - In advance: adult ($25), student ($20).
At the door: adult (30), student ($23)
Information: 334-406-ARTS (2787)
Seussical the Musical, Jr.
Seminole County Elementary School in Donalsonville, GA
Seminole County Elementary School in Donalsonville, GA will be presenting Seussical the Musical, Jr. the weekend of March 6th - 8th. We will have 175 children between Kindergarten and 5th Grade performing! These children have been working very hard practicing and would love to perform in front of as many spectators as possible.
For further questions or information, please feel free to contact Tony Buczek (firstname.lastname@example.com) and/or Tina Fain (firstname.lastname@example.com).


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Posted: Saturday, August 10th 2013 at 1:56pm
Former mental hospital site becomes a tech complex
By The Associated Press
MILLEDGEVILLE - When a small technology firm sets up next month on the grounds where thousands of mentally ill patients used to be treated, it will be a watershed moment in efforts to redevelop Georgia's Central State Hospital, a sprawling 2,000-acre campus on the brink of becoming obsolete.
For years, local officials have grappled with what to do with the massive property that includes some 200 buildings and encompasses a significant portion of this middle Georgia town where local officials cite a 13 percent unemployment rate.
They are not alone: Numerous state mental hospitals in the country have been closing in recent years in favor of a community-based approach to treat the mentally ill, which includes local housing and assistance programs.
"Big cities and small towns all have these huge institutions and are sort of struggling with what to do with them," said Tom Murphy, a senior resident fellow at the Urban Land Institute, which studies land use nationally. "It can be a challenge, but there is a huge opportunity."
What's left behind is often a large piece of land and property that once employed hundreds if not thousands of local residents. As efforts to redevelop these state hospitals have had mixed results, Georgia is taking an innovative approach: analyzing communities that have rebuilt following the closing of a nearby military base while bringing in an expert to lead the process of emulating them.
"In 1968, this was the largest mental institution in the world. In those days, this was the engine that drove our entire community," said Baldwin County Commissioner Henry R. Craig, a native of Milledgeville whose family has long been connected with the hospital. "Now that it is gone we're not looking backward, we're looking forward."
Built in 1842, Central State was Georgia's first public psychiatric hospital and once housed as many as 13,000 patients. At its height in the 1960s, it was like a small city with its own fire and police departments, school programs and a steam plant.
Today, the campus is filled with contradictions. Wide streets lined with elegant pecan trees lead to Victorian-style buildings with broken-out windows and crumbling exteriors. Juxtaposing that, on one road there are tidy houses occupied by state employees. On the edges of the campus, newer buildings recently used to house inmates are surrounded by wire fencing. Thousands are buried in nearby cemeteries.
The state has closed three major programs at Central State since 2009. The state Department of Corrections, which had taken over some of the buildings to house inmates, also moved out a few years ago.
The city took action around that time and began to form the basis of the redevelopment authority and hired Mike Couch, a native of Milledgeville who successfully worked on major redevelopment projects for communities surrounding Fort Benjamin Harrison near Lawrence, Ind., and Fort Sheridan in Lake County, Ill.
Both bases closed under the Base Realignment & Closure Commission process, also known as BRAC, and have largely flourished. Fort Sheridan has become a mostly residential community with townhomes listed for $500,000. Fort Benjamin Harrison was redeveloped into a residential and retail community as well as land set aside for Fort Harrison State Park and Golf Course.
Under the BRAC model, Couch says a critical first step was to get the community to accept that Central State was never coming back. Now, it's a matter of getting the state-owned land transferred to the redevelopment authority. Legislation to start that process is expected to be submitted next year.
"The way the mental health care industry has changed in this state, it was not worth us fighting a battle to keep those buildings open," said Couch, the authority's executive director.
Couch and others with the redevelopment authority are evaluating the property's assets, which include a 90,000-square-foot kitchen, once the largest in the world churning out 30,000 meals a day. Officials also know they will have to rebrand the site given its lengthy history. In addition, there's concern the property's historic buildings will slip into disrepair and could one day be impossible to save. The state currently spends $11 million a year to maintain the property.
The state isn't leaving completely. Up to 180 mentally ill individuals in the court system will continue to be housed at a building on campus.
Couch has made numerous trips to Washington, D.C., to meet with lawmakers and officials from various government agencies, another lesson learned from the BRAC process. He hopes to pique the federal government's interest in stimulating private sector investment. At Fort Benjamin Harrison, the redevelopment authority went to the Department of Defense and was able to keep its finance and accounting system building at the property, and Couch said the office grew from 3,000 to 6,000 employees.
"It became the platform from which the whole place developed," Couch said.
For other state mental hospitals, attempts to repurpose them have led to mixed results. A plan for the Dorothea Dix Hospital in Raleigh, N.C., has been mired in delays in recent years. The Urban Land Institute evaluated the site back in 2006 and made various recommendations on land use, including a residential and mixed-use development and a city park.
The new owners of the former Mayview State Hospital site, south of Pittsburgh, have been tearing down buildings with plans to rebuild the area as a residential and commercial property. And a residential community was built on the former Metropolitan State Hospital site in Lexington, Mass., generating about $53 million from 390 apartments, about 25 percent of which are affordable units, according to the Urban Land Institute.
"While you may have various different uses, you have to have a strategic plan that connects all the various parts of the property," said ULI's Murphy.
Tom Glover with Cogentes, the firm about to open an office in the former Central State superintendent's house, said leasing space was an easy decision. It's convenient to the local college where the IT services and support company hopes to draw interns, and Glover appreciated the park-like setting over its current office on a busy commercial street.
He dismissed concerns about relocating to a place that treated psychiatric patients for years.
"I'm kind of excited to be one of the first ones over there and being established as other businesses come in," said Glover, who spent 20 years in Atlanta before returning to the area.
"Especially in my line of work, business to business, that puts me in a good position."
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text:
For status updates, visit lucyburns.org.
Ballotpedia's coverage of elections held on March 3, 2015, was limited. Select races were covered live, and all results will be added once the merger is complete.
Wilkeson Town Emergency Services Levy Implementation (November 2011)
From Ballotpedia
A Wilkeson Town Emergency Services Levy Implementation measure was on the November 8, 2011 ballot in the town of Wilkeson which is in Pierce County.
This measure was approved
This measure sought to implement a levy at a rate of $.25 per $1,000 of assessed property value for a period of six years in order to help pay for emergency medical services in the town.[2]
Text of measure
The question on the ballot:
Shall the Town of Wilkeson be authorized to impose a regular property tax levies of 25 cents or less per $1,000 of assessed valuation for each of six (6) consecutive years, beginning in 2012, to provide funding for emergency medical services?[3] |
- ↑ Pierce County Elections, Current Election Results
- ↑ Pacific County Elections, Wilkeson Town Proposition (dead link)
- ↑ Note: This text is quoted verbatim from the original source. Any inconsistencies are attributed to the original source.


text:
Fields away.
Wardle, Sarah (2003) Fields away. Bloodaxe Books. ISBN 1852246200
Full text is not in this repository.
Poems. Ten of the poems were published in Anvil New Poets 3 (2001). Fifteen of the poems in this collection won Poetry Review's Geoffrey Dearmer Prize for New Poet of the Year 1999; and the volume went on to win joint second prize in the 2004 Forward Prize for Best First Collection. It contains poems which are pastiches and ironic revisions of canonical English poems; poems in contemporary forms about living with the tag of schizophrenia; and both urban and pastoral poems, including 'Arcadia' which was published in the Times Literary Supplement. The book was reviewed in TLS, Tribune, the Sunday Telegraph, etc. Readings from it were given at the Cheltenham Festival of Literature, the Guildford Book Festival, the Manchester Poetry Festival, and the Folkestone Literary Festival.
Item Type: | Book |
Research Areas: | A. Middlesex University Schools and Centres > School of Media and Performing Arts > Media |
ID Code: | 385 |
Useful Links: | |
Deposited On: | 10 Nov 2008 16:00 |
Last Modified: | 25 Feb 2015 15:59 |
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So you've bought your ticket and popcorn, picked up your 3D glasses and chosen your seat at IMAX Melbourne. For you, it's a time to sit back and relax. However, in the projection booth at the back of the cinema, it's a highly-skilled dash to prepare the next film for screening.
David Booty, Senior Technical Advisor for IMAX Melbourne Museum, might be the projectionist setting up your film. He's been in the IMAX business since 1988 and sometimes has just seven minutes between shows to change over the huge reels of IMAX film. In this video he tells us about the unique projection system while he's rushing around to set up the next show.
Download the Video: Changing film at IMAX video
Watch this video with a transcript
We love receiving comments, but can't always respond.
Updates on what's happening at Melbourne Museum, the Immigration Museum, Scienceworks, the Royal Exhibition Building, and beyond.
Hello Irene, CSIRAC is a key showpiece of Museum Victoria's Technology Collection, hence it remains on public display. Our current exhibitions do not provi...
To read the latest tweets from @museumvictoria
Follow Museum Victoria on
Hi Trudi - It is wonderful that your son is so keen to volunteer on one of our digs but unfortunately you must be 18 years or older to apply so it is something ...


text:
"The harder you work, the luckier you get." by Gary Player
Below is the poem entitled home which was written by poet Charles McDauel. Please feel free to comment on this poem. However, please remember, PoetrySoup is a place of encouragement and growth.
Read Poems by Charles McDauel
Best Charles Mcdauel Poems
Home is where you hang your hat, and also where your ass is sat.


text:
Apple iPhone 4s - 32GB - White (AT&T) Smartphone (MC921LL/A)
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Product Review Summary
Consumer Reviews
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Product Identifiers |
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Type | Smartphone | |
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Brand | Apple |
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text:
DH/SO: none
Children: brit 7, hailey 2, avery 2, savannah 1
Location: midwest
What camera do you have? Do you like it?: Nikon d30 love it
What editing software do you use? gimp and finally jumped to cs3
How long have you been interested in Photography? a long time
What kind of photos do you like to take? What is your style? nt sure yet, but I have become a HUGE fan of black and white
What/who inspires you? ansel adams, and all the girlies on this board
Any favourite tip/trick you'd like to share: don't give up!
Do you have 1 favorite photo and/or self portrait you'd like to share?
<a href="http://www.flickr.com/photos/26583507@N03/3346177059/"
Anything else you'd like to say? I love you ladies! :)


text:
- Viewing Profile: Reputation: Swack
Character: Prideful Gladiator Swacky
Community Stats
- Group Junkies
- Active Posts 70
- Profile Views 34314
- Member Title Advanced Member
- Age Age Unknown
- Birthday July 18
Not Telling
User Tools
Latest Visitors
#4258120 How did Looney get to blizzcon?
Posted Swack on 08 November 2014 - 09:50 PM
#4258009 How did Looney get to blizzcon?
Posted Swack on 08 November 2014 - 09:18 PM
#4253068 rbgs have the highest skill cap
Posted Swack on 04 November 2014 - 09:38 PM
Rguetrainer, on 04 November 2014 - 08:45 PM, said:
Gratz, you have 2 wins, one cuz of ddos, one cuz of lag7 and prolly about 20 losses in total vs us.
You get your rating in both 3's and rbg by ddosing, using hacks, wintrading and getting accplayed, you're a joke.
#4252888 rbgs have the highest skill cap
Posted Swack on 04 November 2014 - 05:55 PM
Smiteyqt, on 04 November 2014 - 05:45 PM, said:
Nah, thats not the "original eheroes" team, only me and ruinz from the people you listed was in that team, then we had people like wallirikz, healingstat, rizzy, waffle, natubob, minpojke etc
#4252816 rbgs have the highest skill cap
Posted Swack on 04 November 2014 - 04:48 PM
Smiteyqt, on 04 November 2014 - 11:52 AM, said:
- RBGs and Arena are different brackets
- Both Require skill / tactics at high rating
- Arena games can be rewarding to win at high rating to achieve milestones
You still dodged us, just like every other team
#4251166 rbgs have the highest skill cap
Posted Swack on 03 November 2014 - 04:01 AM
drzy, on 03 November 2014 - 01:40 AM, said:
i literally pressed blood boil, did literally nothing else and got some stupid useless title i'll never wear.
yea who cares about beating the "top" teams when you can get the same title as them by dodging and virtually doing nothing lmao
only idiots care about being the "best of the best" on this game when its been 6 feet under for expansions now.
I'd say its more idiotic to care more about titles than being the best.
#4162309 The show goes on
Posted Swack on 04 July 2014 - 07:30 PM
bobydk, on 04 July 2014 - 07:04 PM, said:
so i dont know you tell me :S
from a tryhard rbg player you can win with one base by double running carts not hard but hey
noblock was in your group, who is using lag7 quite frequently.. if i remember correctly we got the first kill on your fc but somehow he managed to get the flag again within like 20 sec, which is quite impressive even if he got the luckiest spawntimer, who knows if he used lag7 there.. i guess we'll never know
oh and thats not really the only time you've faced me
ps. impressive amount of kills in all three of those games
#4162255 The show goes on
Posted Swack on 04 July 2014 - 07:02 PM
DjBenx, on 04 July 2014 - 06:27 PM, said:
really? safe hota? nice, i was worried for awhile there.
oh and
#4161958 The show goes on
Posted Swack on 04 July 2014 - 01:50 PM
bobydk, on 04 July 2014 - 11:43 AM, said:
Allmost everyone that plays rbg at like 2.5k plus allmost a nobody they just spend to much time playing the game i am no expection to that come on now im a 2.2k scrub fml and these still admit to dodging even when they play at this rating like this
im not saying i havent been in teams that have a fair share of shady bussiness but wouldnt go as far as ddos ( not that i am aware i dont support such things) and removing some people from our group for using lag7 i guess we look a little better than these lot
because they have no one else to turn to because they dont know how to form a group without him or care to much about there rating to play without lag7 and cant que at 4 am to meet wintraders to get rating so....
you didnt remove people (noblock) from your team for using lag7, you removed him because hes even too shit at the game to play a fc. you were well aware that hes a cheating scum and you still kept on playing with him.
in the game vs us you had people in your team encouraging noblock to use lag7 to win, which can clearly be seen in this vod taken from winkays private stream:
apparently winkay is the only one that speaks up and was against it.
about roguetrainers team, so what if the people in his team doesnt have anyone else to turn to? then they should stick to their 2k groups were they belong if they wouldnt use any exploits.
we very rarely queue after 3 am so this "queue 4 am to get wintraders" is just hilarious, people prefer doing arena at primetime.. something i understand a player like you would stay away from, i guess it has to feel bad being you tho, playing rbg 24/7 and not doing anything else in this game and when you come up against us you still lose
#4147070 Is this legit?
Posted Swack on 18 June 2014 - 03:17 PM
Noblock, on 18 June 2014 - 11:53 AM, said:
you have not won a single game "fair", you have won one AB game vs us because we simply just skipped going BS because you had been using lag7 to get it in previous games and there was no way for us to stop the cap, how is that fair? both you and me knows the outcome of the game would have been different if you werent a cheater.
as for ddosing, you are always the common factor in the opposing team, it was 100% a ddos on lurtex and it's not the first time he is getting hit when facing you.
Noblock, on 18 June 2014 - 02:02 PM, said:
That is you, sorry but changing your user name and avatar is not enough to cover up your tracks.
too late bro
you are a toxic player who tries to exploit your way to victory with any means necessary and should have been banned from this game ages ago, looking through some of your posts on ownedcore is just disgusting and i can only imagine what kind of shit you have posted in the elite section.
#4145795 Is this legit?
Posted Swack on 17 June 2014 - 07:24 PM
Reedztv, on 17 June 2014 - 09:48 AM, said:
oh that sounds exactly like some trash player we have on eu, noblock aka speedytko/imbajohnx.
this player is using lag7 to exploit his way up the ladder because his team is absolutely garbage in fights, and whenever lag7 is not enough, players on the opposing team seem to mysteriously disconnect.
#4142141 Nobody is safe
Posted Swack on 14 June 2014 - 01:39 AM
#4132733 Poor roguetrainer :( No IPS = No win
Posted Swack on 01 June 2014 - 02:44 PM
Feliclandelo, on 01 June 2014 - 09:47 AM, said:
Also I doubt you even know that the relativity theory is about
I'm just saying that you really are no better. Just like Hoodzx abusing speedcapping before it got fixed, and still being stuck at 2200. You're all a bunch of toxic people to the community.
He is using lag7.
It's quite sad to see these awful players like him that spends all their day in rbg, doing nothing else in this game but rbg and they are still terrible at it, faced him on AB a couple of weeks ago with a alt group where he used lag7 to freely cap BS, they still managed to lose the game eventho they got BS for free and they were ddosing a player in our team (lurtex).
#4132418 ProGameX World of Warcraft Arena May 2014 Tournament (3v3)
Posted Swack on 01 June 2014 - 01:13 AM
jaimex, on 31 May 2014 - 06:27 PM, said:
stop posting.
- Viewing Profile: Reputation: Swack
- Privacy Policy


text:
Watch ""Son Of The Beach" With Sex You Get Eggroll (Season 1, Episode 1) (2000)" Movie Online
The Mayor wants head lifeguard Notch Johnson out of Malibu Adjacent, and she's recruited Kimberlee Clark to join his squad to get the low-down on him by wearing a mini-camera. She thinks that her work is done when Notch decides to bust enslaved girls from a bordello from the inside, by posing as a customer. If the slavers don't get Notch, the Mayor's video will. Or will Kimberlee help Notch to save the day?
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What does ESCR mean in State & Local?
This page is about the meanings of the acronym/abbreviation/shorthand ESCR in the Governmental field in general and in the State & Local terminology in particular.
Find a translation for ESCR in other languages:
Select another language:
Discuss this ESCR abbreviation with the community:
Use the citation below to add this abbreviation to your bibliography:
"ESCR." Abbreviations.com. STANDS4 LLC, 2015. Web. 3 Mar. 2015. <http://www.abbreviations.com/term/344251>.
ESCR also stands for:
- Earth Science Conservation Review
- Economic Social and Cultural Rights
- Embryonic Stem Cell Registry
- Embryonic Stem Cell Research
- Environmental Stress Cracking Resistance
... and 3 more »
Nearby & related abbreviations:
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- 10
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3 bedroom end of terrace house to rent 15 Dol Y Dderwen,Ammanford,SA18 2GA
Three bedroom house suitable for working families, ready to let now. Terms and conditions apply More details ›Added on 19/02/2015 by Coastal Housing Group , Coastal Housing Group . Call: 01792 734015 Local call rate
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3 bedroom semi-detached house to rent Church Street, Ammanford
Ideal for professional couple/family - Delightful rear patio & garden - Unfurnished - Three double bedrooms - Off road parking - Off road parking - Book A Viewing Today SureLet Carmarthen are delighted to offer this spacious three double bedroom house with kitchen, More details › -
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Warehouse to rent C1 Capel Hendre Industrial Estate, Ammanford, SA18 3SJ
Capel Hendre Industrial Estate is an ESTABLISHED INDUSTRIAL ESTATE in close proximity to J49 of the M4. The property is a single storey light industrial storage building with the main warehouse is fitted with THREE ROLLER SHUTTER DOORS which provide access into the building from the secure yard. More details ›


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My Genealogy Home PageUpdated September 4, 2002 |
Teresa Jean Wicker 807 N 31st Street Lawton, Ok 73505 United States |
580-357-4973 firstname.lastname@example.com |
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The content shown on this page has been submitted by a Genealogy.com customer, and is not subject to verification by Genealogy.com. Neither Genealogy.com nor its affiliates are responsible for the accuracy of any information contained on this page. The opinions expressed on this page are the author's alone and not the opinions of Genealogy.com.
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It's fast, fun, free...and zero pressure. Get started.
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Howell falls down Tshwane leaderboard
8:02pm Saturday 1st March 2014 in Sport
A TWO-OVER-PAR round of 74 saw David Howell tumble down the Tshwane Open leaderboard today.
The Broome Manor pro carded two bogeys and a double bogey, to go with two birdies, on the third day of action at the South African event.
He lies in a tie for 45th place going into the final round of the tournament, on four-under-par, down 26 places on his ranking after 36 holes.
Ross Fisher leads the standings by five shots at 18-under-par.
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Pronunciation: Randall
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male names
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Our Editorial and News Affiliates
Latest Green news from across Eco-related , Green sport and the environmental news. Live Green news source for Green business, Green celebs and Green culture
Website: http://www.clickgreen.org.uk/
More than 40% of Scotland's energy demand is now met by renewables
December 19, 2013 09:18 AM - ClickGreen Staff, ClickGreen
Scotland's renewable electricity output has reached record-high levels, according to official statistics released today. The figures, published by the Department of Energy and Climate Change, show that renewables met a record-breaking 40.3 per cent of gross electricity consumption in 2012, confirming that Scotland is on track to meet its interim target of 50% by 2015.
Renewable energy is young generation's top investment choice
December 13, 2013 08:47 AM - ClickGreen staff, ClickGreen
A nationwide survey has found that renewable energy is the British public's top investment choice after property but is the number one alternative for 18 to 24-year-olds. The findings show the country's investment preferences reflect fast growing public support for clean power.
UK looking to reap green energy from roadside verges
December 9, 2013 08:18 AM - ClickGreen staff, ClickGreen
A farm in Snowdonia has joined a pioneering European project which aims to transform problematic habitats into clean energy and new income sources for farmers. Research has begun at the National Trust farm, Hafod y Llan, to trial the use of a new technology, developed in Germany, which could turn soft rush, gorse and bracken crops into viable biomass fuel.
Europe's biggest renewable energy plant completes switch from coal to biomass
December 9, 2013 08:07 AM - ClickGreen Staff, ClickGreen
Britain's largest coal-fired power station is set to become one of Europe's biggest renewable electricity generators today, with the potential for new future generation on the site to be based on truly clean coal. Energy Secretary Ed Davey opened the Drax coal-to-biomass conversion plant, and announced the Government was awarding funding to further the White Rose CCS project, also based at the site.
Water industry warns it may not match demands of public supply and fracking
November 27, 2013 11:12 AM - ClickGreen staff, ClickGreen
A report by Water UK, which represents the water industry, warns that in dry spells there may not be enough resource to supply both the public and fracking operations. The research was released as it was announced the organization had signed a Memorandum of Understanding with the UK Onshore Operators Group, which ensures the groups' respective members will cooperate throughout the shale gas exploration and extraction process.
UK ordered to install 70,000 electric vehicle charging points by 2020
November 26, 2013 03:27 PM - ClickGreen staff, ClickGreen
European law-makers have passed a resolution that will compel the UK to install a network of 70,000 electric vehicle recharging points as well as hydrogen and natural gas stations by 2020. The European Parliament today endorsed a draft directive that aims to reduce dependence on oil and boost take-up of alternative fuels, so as to help achieve a 60% cut in greenhouse gas emissions from transport by 2050.
World's first ever 'Brussels Sprout Battery' lights up Christmas tree
November 26, 2013 08:44 AM - ClickGreen Staff, ClickGreen
A team of scientists and engineers from The Big Bang UK Young Scientists & Engineers Fair has created the world's first battery made entirely of Brussels sprouts, which is being used to light an 8 foot Christmas tree. The "Sprout Battery" was launched today on the Southbank, London, with the help of Year 7 pupils from City of London Academy, Islington, who were on hand to switch on the Christmas tree lights.
US Clean Energy Sector Breaks Through 1 Million Job Vacancies
November 23, 2013 02:09 PM - Click Green Staff, ClickGreen
Ecotech Institute's Clean Jobs Index, a tool to compare US states' use and development of clean energy, found more than one million job postings in the clean energy sector from July through to September this year. The milestone figure reveals a 54 percent increase in needed clean energy employees, evidence that the sector is rapidly growing and in need of experts.
Europe to open up free access to environmental satellite data
November 13, 2013 08:44 AM - ClickGreen Staff, ClickGreen
The European Commission has announced it will provide free, full and open access to a wealth of important environmental data gathered by Copernicus, Europe's Earth observation system. The new open data dissemination regime, which will come into effect next month, will support the vital task of monitoring the environment and will also help Europe's enterprises, creating new jobs and business opportunities.
Green Father Christmas promotes less consumption
November 12, 2013 09:50 AM - Click Green staff, ClickGreen
A new 'Green Father Christmas' campaign is calling for the festive icon to embrace his green coat, abandoning his allegiance with big global consumer brands. Launched by Abundance Generation, the campaign stands for a Christmas less focused on consumption. 'Green Father Christmas' calls for those holding a greener Christmas to share his image online, allowing his new look to travel across the world.


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Fergie Nails | Pictures
Happy Birthday, Fergie! See Her Top 10 Manicure Moments
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Happy Birthday, Fergie! See Her Top 10 Manicure Moments
Fergie turns 38 today, and the mom-to-be has a penchant for amazing manicures. Extralong, almond-shaped tips are her specialty, but we've seen the songstress don a variety of styles and hues over the years. Get a close-up look at 10 of her best polish shades and nail designs as Fergie welcomes in another year.
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