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Growth and Characterization of Ge 1-x Sn x Layers for High Mobility ...
Science Conference Proceedings (OSTI)
Tensile-strained Ge and GeSn layers are attractive for high mobility channel materials of future CMOS devices, because both electron and hole mobilities of�...
In search of high performance anode materials for Mg batteries: computational studies of Mg in Ge, Si, and Sn
E-Print Network (OSTI)
We present ab initio studies of structures, energetics, and diffusion properties of Mg in Si, Ge, and Sn diamond structures to evaluate their potential as insertion type anode materials for Mg batteries. We show that Si could provide the highest specific capacities (3817 mAh g-1) and the lowest average insertion voltage (~0.15 eV vs. Mg) for Mg storage. Nevertheless, due to its significant percent lattice expansion (~216%) and slow Mg diffusion, Sn and Ge are more attractive; both anodes have lower lattice expansions (~120 % and ~178 %, respectively) and diffusion barriers (~0.50 and ~0.70 eV, respectively for single-Mg diffusion) than Si. We show that Mg-Mg interactions at different stages of charging can decrease significantly the diffusion barrier compared to the single atom diffusion, by up to 0.55 eV.
Malyi, Oleksandr I; Manzhos, Sergei; 10.1016/j.jpowsour.2013.01.114
Emission of forward neutrons by 158A GeV indium nuclei in collisions with Al, Cu, Sn and Pb
The cross sections of forward emission of one, two and three neutrons by 158A GeV 115In nuclei in collisions with Al, Cu, Sn and Pb targets are reported. The measurements were performed in the framework of the ALICE-LUMI experiment at the SPS facility at CERN. Various corrections accounting for the absorption of beam nuclei and produced neutrons in target material and surrounding air were introduced. The corrected cross section data are compared with the predictions of the RELDIS model for electromagnetic fragmentation of 115In in ultraperipheral collisions, as well as with the results of the abrasion-ablation model for neutron emission in hadronic interactions. The measured neutron emission cross sections well agree with the RELDIS results, with the exception of In-Al collisions where the measured cross sections are larger compared to RELDIS. This is attributed to a relatively large contribution of hadronic fragmentation of In on Al target with respect to electromagnetic fragmentation, on the contrary to similar measurements performed earlier with 30A GeV 208Pb colliding with Al.
E. V. Karpechev; I. A. Pshenichnov; T. L. Karavicheva; A. B. Kurepin; M. B. Golubeva; F. F. Guber; A. I. Maevskaia; A. I. Reshetin; V. V. Tiflov; N. S. Topilskaya; P. Cortese; G. Dellacasa; R. Arnaldi; N. DeMarco; A. Ferretti; M. Gallio; A. Musso; C. Oppedisano; A. Piccotti; E. Scomparin; E. Vercellin; C. Cicalo; G. Puddu; E. Siddi; P. Szymanski; I. Efthymiopoulos
Phase stability, electrochemical stability and ionic conductivity of the Li[subscript 10�1]MP[subscript 2]X[subscript 12] (M = Ge, Si, Sn, Al or P, and X = O, S or Se) family of superionic conductors
We present an investigation of the phase stability, electrochemical stability and Li[superscript +] conductivity of the Li[subscript 10�1]MP[subscript 2]X[subscript 12] (M = Ge, Si, Sn, Al or P, and X = O, S or Se) family ...
Ong, Shyue Ping
Conventional and Stuffed Bergman-Type Phases in the Na-Au-T (T=Ga, Ge, Sn) Systems: Synthesis, Structures, Coloring of Cluster Centers, and Fermi Sphere - Brillouin Zone Interactions
SciTech Connect
Bergman-type phases in the Na?Au?T (T = Ga, Ge, and Sn) systems were synthesized by solid-state means and structurally characterized by single-crystal X-ray diffraction studies. Two structurally related (1/1) Bergman phases were found in the Na? Au?Ga system: (a) a conventional Bergman-type (CB) structure, Na26AuxGa54?x, which features empty innermost icosahedra, as refined with x = 18.1 (3), Im3?, a = 14.512(2) �, and Z = 2; (b) a stuffed Bergman-type (SB) structure, Na26AuyGa55?y, which contains Gacentered innermost icosahedra, as refined with y = 36.0 (1), Im3?, a = 14.597(2) �, and Z = 2. Although these two subtypes have considerable phase widths along with respective tie lines at Na ? 32.5 and 32.1 atom %, they do not merge into a continuous solid solution. Rather, a quasicrystalline phase close to the Au-poor CB phase and an orthorhombic derivative near the Au-rich SB phase lie between them. In contrast, only Au-rich SB phases exist in the Ge and Sn systems, in which the innermost icosahedra are centered by Au rather than Ge or Sn. These were refined for Na26Au40.93(5)Ge14.07(5) (Im3?, a = 14.581(2) �, and Z = 2) and Na26Au39.83(6)Sn15.17(6) (Im3?, a = 15.009(2) �, and Z = 2), respectively. Occupations of the centers of Bergman clusters are rare. Such centering and coloring correlate with the sizes of the neighboring icosahedra, the size ratios between electropositive and electronegative components, and the values of the average valence electron count per atom (e/a). Theoretical calculations revealed that all of these phases are Hume?Rothery phases, with evident pseudogaps in the density of states curves that arise from the interactions between Fermi surface and Brillouin zone boundaries corresponding to a strong diffraction intensity.
Lin, Qisheng; Smetana, Volodymur; Miller, Gordon J.; Corbett, John D
SrZn{sub 2}Sn{sub 2} and Ca{sub 2}Zn{sub 3}Sn{sub 6} - two new Ae-Zn-Sn polar intermetallic compounds (Ae: alkaline earth metal)
SrZn{sub 2}Sn{sub 2} and Ca{sub 2}Zn{sub 3}Sn{sub 6}, two closely related new polar intermetallic compounds, were obtained by high temperature reactions of the elements. Their crystal structures were determined with single crystal XRD methods, and their electronic structures were analyzed by means of DFT calculations. The Zn-Sn structure part of SrZn{sub 2}Sn{sub 2} comprises (anti-)PbO-like {l_brace}ZnSn{sub 4/4}{r_brace} and {l_brace}SnZn{sub 4/4}{r_brace} layers. Ca{sub 2}Zn{sub 3}Sn{sub 6} shows similar {l_brace}ZnSn{sub 4/4}{r_brace} layers and {l_brace}Sn{sub 4}Zn{r_brace} slabs constructed of a covalently bonded Sn scaffold capped by Zn atoms. For both phases, the two types of layers are alternatingly stacked and interconnected via Zn-Sn bonds. SrZn{sub 2}Sn{sub 2} adopts the SrPd{sub 2}Bi{sub 2} structure type, and Ca{sub 2}Zn{sub 3}Sn{sub 6} is isotypic to the R{sub 2}Zn{sub 3}Ge{sub 6} compounds (R=La, Ce, Pr, Nd). Band structure calculations indicate that both SrZn{sub 2}Sn{sub 2} and Ca{sub 2}Zn{sub 3}Sn{sub 6} are metallic. Analyses of the chemical bonding with the electron localization function (ELF) show lone pair like basins at Sn atoms and Zn-Sn bonding interactions between the layers for both title phases, and covalent Sn-Sn bonding within the {l_brace}Sn{sub 4}Zn{r_brace} layers of Ca{sub 2}Zn{sub 3}Sn{sub 6}. - Graphical abstract: Crystal structures of the new Ae-Zn-Sn polar intermetallic phases SrZn{sub 2}Sn{sub 2} and Ca{sub 2}Zn{sub 3}Sn{sub 6}. Highlights: Black-Right-Pointing-Pointer New polar intermetallic phases SrZn{sub 2}Sn{sub 2} and Ca{sub 2}Zn{sub 3}Sn{sub 6}. Black-Right-Pointing-Pointer Obtained by high temperature reactions of the elements. Black-Right-Pointing-Pointer Single crystal XRD structure determination and DFT electronic structure calculations. Black-Right-Pointing-Pointer Closely related crystal and electronic structures. Black-Right-Pointing-Pointer Metallic conductivity coexisting with lone pairs and covalent bonding features.
Stegmaier, Saskia [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstrasse 4, 85747 Garching (Germany); Faessler, Thomas F., E-mail: email@example.com [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstrasse 4, 85747 Garching (Germany)
HD1: Design and Fabrication of a 16 Tesla Nb3Sn Dipole Magnet
and Fabrication of a 16 Tesla Nb 3 Sn Dipole Magnet A .R.ge nerating fields above 16 Tesla in practical acceleratordesign fields above 10 Tesla. In a series of magnet tests,
Hafalia, A.R.
Beta Decay of the Proton-Rich Nuclei 102Sn and 104Sn
The {beta} decays of {sup 102}Sn and {sup 104}Sn were studied by using high-resolution germanium detectors as well as a Total Absorption Spectrometer (TAS). For {sup 104}Sn, with three new {beta}-delayed {gamma}-rays identified, the total Gamow-Teller strength (BGT) value of 2.7(3) was obtained. For {sup 102}Sn, the {gamma}-{gamma} coincidence data were collected for the first time, allowing us to considerably extend the decay scheme. This scheme was used to unfold the TAS data and to deduce a BGT value of 4.2(8) for this decay. This result is compared to shell model predictions, yielding a hindrance factor of 3.6(7) in agreement with those obtained previously for {sup 98}Cd and {sup 100}In. Together with the latter two, {sup 102}Sn completes the triplet of Z {le} 50, N {ge} 50 nuclei with two proton holes, one proton hole and one neutron particle, and two neutron particles with respect to the doubly magic {sup 100}Sn core.
Karny, M. [University of Warsaw; Batist, L. [St. Petersburg Nuclear Physics Institute; Banu, A. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Becker, F. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Blazhev, A. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Brown, B. A. [Michigan State University, East Lansing; Bruchle, W. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Doring, J. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Faestermann, T. [Technische Universitat Munchen; Gorska, M. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Grawe, H. [GSI-Hemholtzzentrum fur Schwerionenforschung, Darmstadt, Germany; Janas, Z. [University of Warsaw; Jungclaus, A. [Universidad Autonoma de Madrid, Madrid; Kavatsyuk, M. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Kavatsyuk, O. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Kirchner, R. [Gesellschaft fur Schwerionenforschung (GSI), Germany; La Commara, M. [Universita Federico II and INFN Napoli; Mandal, S. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Mazzocchi, C. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Miernik, K. [University of Warsaw; Mukha, I. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Muralithar, S. [University of Warsaw; Plettner, C. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Plochocki, A. [University of Warsaw; Roeckl, E. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Romoli, M. [Universita Federico II and INFN Napoli; Rykaczewski, Krzysztof Piotr [ORNL; Schadel, M. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Schmidt, K. [University of Warsaw; Schwengner, R. [University of Warsaw; Zylicz, J. [University of Warsaw
S-Sn (Sulfur - Tin)
S-Sn crystallographic data...29 �?� �?� βSn 2 S 3 29 �?� �?� αSn 2 S 3 29 oP 20 Pnma SnS 2 35.1 hP * hP 3 P 6 3 mc P m 1 Metastable phases SnS (thin film) 21.3 cF 8 Fm m Sn 4 S 5 25.3 �?� �?� Sn 3 S 4 26.4 t ** �?�...
In-Sn (Indium - Tin)
In-Sn crystallographic data...In-Sn crystallographic data Phase Composition, wt% Sn Pearson symbol Space group (In) 0 to 12.4 tI 2 I 4/ mmm β 12.4 to 44.8 tI 2 I 4/ mmm γ 73 to ? hP 5 P 6/ mmm (βSn) ? to 100 tI 4 I 4 1 / amd (αSn) 100 cF 8 Fd m...
Ge-S (Germanium - Sulfur)
Ge-S crystallographic data...Ge-S crystallographic data Phase Composition, wt% S Pearson symbol Space group (Ge) 0 cF 8 Fd m βGeS 30.6 h ** �?� αGeS 30.6 oP 8 Pnma GeS 2 46.9 oF 72 Fdd 2...
Reaction mechanism and reaction rate of Sn evaporation from liquid ...
Although Sn is not easily removed by oxidation, Sn can be evaporated as Sn(g) and SnS(g), respectively. Increasing [%S] thus accelerates detinning rate.
Ge-In (Germanium - Indium)
Ge-In crystallographic data...Ge-In crystallographic data Phase Composition, wt% In Pearson symbol Space group (Ge) 0 cF 8 Fd m (In) 100 tI 2 I 4/ mmm...
SN Environmental Review (NEPA)
NLE Websites -- All DOE Office Websites (Extended Search)
Rates Rates You are here: SN Home page > Environment Environmental Review-NEPA Major Initiatives are the large projects that SNR is currently involved in. As new projects are added, and existing ones completed, you will find current information and updates in this area. Environmental Impact Statement-EIS Sacramento Area Voltage Support Trinity PUD Interconnection Projects Alternative Intake Project Transmission Line and Interconnection Delta-Mendota Canal / California Aqueduct Intertie (PDF - 17MB) Sutter Power Project San Luis Transmission Project Environmental Assessment-EA San Joaquin Valley Right-of-Way Maintenance Project North Area Right-of-Way Maintenance Project Sacramento Valley Right-of-Way Maintenance Project Categorical Exclusions-CX Cottonwood - Roseville OPGW Project CX (PDF - 6787KB)
Structural studies of two novel La-Sn compounds: La30Sn30 and La32Ni2Sn35
Two novel intermetallic compounds containing lanthanum and tin have been obtained for the first time. Single crystal structures of these two phases, La{sub 30}Sn{sub 30} and La{sub 32}Ni{sub 2}Sn{sub 35} have been studied by X-ray crystallography. La{sub 30}Sn{sub 30} is a new 1:1 binary containing La and Sn and has been refined in the Cmmm space group. This phase was made at high temperatures (<1200 C) from a loaded composition of La{sub 68}Sn{sub 70}. Unlike the reported 1:1 binary, LaSn which crystallizes in the Cmcm space group (only powder X-ray diffraction studies reported), La{sub 30}Sn{sub 30} forms good crystals for structural determination. The crystal structure of La{sub 30}Sn{sub 30} show Sn-Sn dimers and Sn-centered, face-sharing biaugmented triangular prisms composed of La atoms. La{sub 30}Sn{sub 30} does not belong to any known structure-type. La{sub 32}Ni{sub 2}Sn{sub 35} was obtained in high yields at high temperatures (> 1200 C) and refined in the 14/mmm space group. It belongs to the USi structure type in which the Ni/Sn atoms occupy the Si sites, and La/Sn atoms occupy the U sites. The crystal structure of La{sub 32}Ni{sub 2}Sn{sub 35} consists of buckled sheets made from La-centered, corner-shared octahedra of Sn. These sheets are intraconnected through Ni-Sn-Ni bonds along the c-axis. The crystals are not air sensitive, unlike La{sub 30}Sn{sub 30}, which can be attributed to the presence of Ni in the crystal structure.
Yang, Amie S.
Ge-Y (Germanium - Yttrium)
Ge-Y crystallographic data...αY 2 Ge 3 55 hP 3 P 6/ mmm βY 3 Ge 5 57.6 oF 72 Fdd 2 αY 3 Ge 5 57.6 tI 12 I 4 1 / amd YGe 2 62.03 oC 12 Cmcm Y 2 Ge 7 74.09 �?� C 222 1 (a) (Ge) 0 to ~0.4 cF 8 Fd m (a) Tentative...
Thermoelectric properties of nanoporous Ge
We computed thermoelectric properties of nanoporous Ge (np-Ge) with aligned pores along the [001] direction through a combined classical molecular dynamics and first-principles electronic structure approach. A significant ...
Lee, Joo-Hyoung
GE | OpenEI Community
Open Energy Info (EERE)
GE Home Jessi3bl's picture Submitted by Jessi3bl(15) Member 16 December, 2012 - 19:18 GE, Clean Energy Fuels Partner to Expand Natural Gas Highway clean energy Clean Energy Fuels...
Development of Superalloy GTD262 at GE
... in GE power generation gas turbines. By integrating computational thermodynamic predictions of phase equilibria with GE's property models and databases,�...
Two novel intermetallic compounds containing lanthanum and tin have been obtained for the first time. Single crystal structures of these two phases, La{sub 30}Sn{sub 30} and La{sub 32}Ni{sub 2}Sn{sub 35} have been studied by X-ray crystallography. La{sub 30}Sn{sub 30} is a new 1:1 binary containing La and Sn and has been refined in the Cmmm space group. This phase was made at high temperatures ( 1200 C) and refined in the 14/mmm space group. It belongs to the USi structure type in which the Ni/Sn atoms occupy the Si sites, and La/Sn atoms occupy the U sites. The crystal structure of La{sub 32}Ni{sub 2}Sn{sub 35} consists of buckled sheets made from La-centered, corner-shared octahedra of Sn. These sheets are intraconnected through Ni-Sn-Ni bonds along the c-axis. The crystals are not air sensitive, unlike La{sub 30}Sn{sub 30}, which can be attributed to the presence of Ni in the crystal structure.
OpenEI Community - GE
en.openei.orgcommunitytaxonomyterm2030 en GE, Clean Energy Fuels Partner to Expand Natural Gas Highway http:en.openei.orgcommunityblogge-clean-energy-fuels-partner-expa...
SN2002bu -- Another SN2008S-like Transient
We observed SN2002bu in the near-IR with the Hubble Space Telescope, the mid-IR with the Spitzer Space Telescope and in X-rays with Swift 10 years after the explosion. If the faint L_H\\sim100 Lsun HST near-IR source at the transient position is the near-IR counterpart of SN2002bu, then the source has dramatically faded between 2004 and 2012, from L\\sim10^6.0 Lsun to L\\sim10^4.5 Lsun. It is still heavily obscured, tau_V\\sim5 in graphitic dust models, with almost all the energy radiated in the mid-IR. The radius of the dust emission is increasing as R\\simt^(0.7+/-0.4) and the optical depth is dropping as tau_V\\simt^(-1.3+/-0.4). The evolution expected for an expanding shell of material, tau_V\\sim1/t^2, is ruled out at approximately 2 sigma while the tau_V\\simt^(-0.8) to t^(-1) optical depth scaling for a shock passing through a pre-existing wind is consistent with the data. If the near-IR source is a chance superposition, the present day source can be moderately more luminous, significantly more obscured and ev...
Szczygiel, D M; Dai, X
GE Solar Power | Open Energy Information
Login | Sign Up Search Page Edit with form History Facebook icon Twitter icon GE Solar Power Jump to: navigation, search Name GE Solar Power Place Delaware Sector Solar...
Multilayer nanoassembly of Sn-nanopillar arrays sandwiched between...
Multilayer nanoassembly of Sn-nanopillar arrays sandwiched between graphene layers for high-capacity lithium storage Title Multilayer nanoassembly of Sn-nanopillar arrays...
GE PowerPoint Template
Energy.gov (U.S. Department of Energy (DOE)) Indexed Site
Steels for Steels for Accident Tolera nt Fuel Cla ddings Ferritic Ma rtensitic Alloys a s Accident Tolera nt Fuel (ATF) Cla dding Ma teria l for Light Wa ter Rea ctors Ra ul B. Reba k, GE Globa l Resea rch DOE Integra tion Meeting, Sa lt La ke City 27-August-2013 DE NE 568 2 / GE Reba k - DOE Integra tion Meeting, Sa lt La ke City, 27-August-2013/ GE Project Tea m 3 / GE Reba k - DOE Integra tion Meeting, Sa lt La ke City, 27-August-2013/ Approa ch of GE Resea rch Proposa l * Demonstra te tha t sta inless iron ba sed bulk a lloys or Adva nced Steels ca n be used a s fuel cla dding ma teria ls in commercia l nuclea r rea ctors * The proposed ma teria l should be a s good a s Zr a lloys (or better tha n Zr a lloys) under norma l opera tion conditions 1. Resista nt to genera l corrosion a nd environmenta l cra
Clean Cities: National Clean Fleets Partner: GE
GE to GE to someone by E-mail Share Clean Cities: National Clean Fleets Partner: GE on Facebook Tweet about Clean Cities: National Clean Fleets Partner: GE on Twitter Bookmark Clean Cities: National Clean Fleets Partner: GE on Google Bookmark Clean Cities: National Clean Fleets Partner: GE on Delicious Rank Clean Cities: National Clean Fleets Partner: GE on Digg Find More places to share Clean Cities: National Clean Fleets Partner: GE on AddThis.com... Goals & Accomplishments Partnerships National Clean Fleets Partnership National Parks Initiative Electric Vehicle Infrastructure Training Program Advanced Vehicle Technology Competitions Natural Gas Transit & School Bus Users Group Natural Gas Vehicle Technology Forum Hall of Fame Contacts National Clean Fleets Partner: GE
GE Energy Formerly GE Power Systems | Open Energy Information
GE Power Systems GE Power Systems Jump to: navigation, search Name GE Energy (Formerly GE Power Systems) Place Atlanta, Georgia Zip 30339 Sector Renewable Energy, Solar, Wind energy Product Atlanta-based supplier of power generation and energy delivery technologies in all areas of the energy industry including renewable resources such as water, wind, solar and alternative fuels. Coordinates 33.748315°, -84.391109° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.748315,"lon":-84.391109,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}
Effective suppression of Sn-58Bi/Cu interfacial reactions with minor ...
On-Site Speaker (Planned), Trong Lan Nguyen. Abstract Scope, Overgrowth of the ?-Cu6Sn5 layer between Sn-58 wt.%Bi (Sn-58Bi)�...
Demand Response Enabled Appliance Development at GE
Demand Response Enabled Appliance Development at GE Speaker(s): David Najewicz Date: June 12, 2009 - 12:00pm Location: 90-3122 Dave Najewicz of GE Consumer and Appliances will...
Stable, free-standing Ge nanocrystals
Stable, free-standing Ge nanocrystals I.D. Sharp, a,b) Q.Berkeley, CA 94720 ABSTRACT Free-standing Ge nanocrystalsin diluted HF to obtain free-standing nanocrystals on a Si
Characterisation of Sm-Co-Sn alloys
Cast SmCo{sub 5-x}Sn{sub x} (x = 0.00, 0.01, 0.06 and 0.12) alloys were prepared by arc melting with subsequent thermal homogenisation. Microstructural and x-ray diffraction studies revealed that the alloys were constituted of three phases i.e. SmCo{sub 5}, Sm{sub 2}Co{sub 7} and Sm{sub 2}Co{sub 17}. The addition of Sn caused grain refinement of the alloys. It was found that the Sn addition promoted nucleation of Sm{sub 2}Co{sub 17}, segregation of solute atoms and increase in unit cell volume; consequently, significant augmentation in remanence to maximum magnetization ratios was achieved. - Research Highlights: 1. Tin up to 0.12% was added in a Samarium cobalt-SmCo5 system; discernable changes in the microstructure and phase distribution were achieved; {yields} the nucleation of Sm2Co17 phase, {yields} segregation of Sn and samarium rich Sm2Co7 phase on the grain boundaries {yields} refinement of the microstructure in term of grain size 2. Moreover, addition of Sn caused twofold increase in magnetic properties (Remanence-Mr) of the Sm-Co alloy as compared to the binary SmCo5 system.
Zaigham, Hamid, E-mail: email@example.com; Khalid, F. Ahmad
Valley splitting theory of SiGe/Si/SiGe quantum wells Mark Friesen,1,
Valley splitting theory of SiGe/Si/SiGe quantum wells Mark Friesen,1, * Sucismita Chutia,1 Charles an effective mass theory for SiGe/Si/SiGe quantum wells, with an emphasis on calculating the valley splitting. The theory introduces a valley coupling parameter vv which encapsulates the physics of the quantum well
Sheridan, Jennifer
Spectrum of electron-hole states of the Si/Ge structure with Ge quantum dots
The lateral photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots of various sizes are investigated. We observed optical transition lines between the hole levels of quantum dots and electronic states of Si. This enabled us to construct a detailed energy level diagram of the electron-hole spectrum of the Si/Ge structures. It is shown that the hole levels of Ge quantum dots are successfully described by the 'quantum box' model using the actual sizes of Ge islands. It I found that the position of the longwavelength photosensitivity boundary of Si/Ge structures with Ge quantum dots can be controlled by changing the growth parameters.
Talochkin, A. B., E-mail: firstname.lastname@example.com; Chistokhin, I. B., E-mail: firstname.lastname@example.com [Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
Aluminum-stabilized NB3SN superconductor
DOE Patents (OSTI)
An aluminum-stabilized Nb.sub.3 Sn superconductor and process for producing same, utilizing ultrapure aluminum. Ductile components are co-drawn with aluminum to produce a conductor suitable for winding magnets. After winding, the conductor is heated to convert it to the brittle Nb.sub.3 Sn superconductor phase, using a temperature high enough to perform the transformation but still below the melting point of the aluminum. This results in reaction of substantially all of the niobium, while providing stabilization and react-in-place features which are beneficial in the fabrication of magnets utilizing superconducting materials.
Scanlan, Ronald M. (Livermore, CA)
On the Sn loss from thin films of the material system Cu-Zn-Sn-S in high vacuum
In this paper the Sn loss from thin films of the material system Cu-Zn-Sn-S and the subsystems Cu-Sn-S and Sn-S in high vacuum is investigated. A combination of in situ x-ray diffractometry and x-ray fluorescence (XRF) at a synchrotron light source allowed identifying phases, which tend to decompose and evaporate a Sn-containing compound. On the basis of the XRF results a quantification of the Sn loss from the films during annealing experiments is presented. It can be shown that the evaporation rate from the different phases decreases according to the order SnS{yields}Cu{sub 2}SnS{sub 3}{yields}Cu{sub 4}SnS{sub 4}{yields}Cu{sub 2}ZnSnS{sub 4}. The phase SnS is assigned as the evaporating compound. The influence of an additional inert gas component on the Sn loss and on the formation of Cu{sub 2}ZnSnS{sub 4} thin films is discussed.
Weber, A.; Mainz, R.; Schock, H. W. [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Glienicker Str. 100, D-14109 Berlin (Germany)
Shell model calculation for Te and Sn isotopes in the vicinity of {sup 100}Sn
New Shell Model calculations for even-even isotopes {sup 104-108}Sn and {sup 106,108}Te, in the vicinity of {sup 100}Sn have been performed. The calculations have been carried out using the windows version of NuShell-MSU. The two body matrix elements TBMEs of the effective interaction between valence nucleons are obtained from the renormalized two body effective interaction based on G-matrix derived from the CD-bonn nucleon-nucleon potential. The single particle energies of the proton and neutron valence spaces orbitals are defined from the available spectra of lightest odd isotopes of Sb and Sn respectively.
Yakhelef, A.; Bouldjedri, A. [Physics Department, Farhat abbas University, Setif (Algeria); Physics Department, Hadj Lakhdar University, Batna (Algeria)
GE Appliances and Lighting Home Energy Solutions
GE Appliances and Lighting GE Appliances and Lighting Home Energy Solutions Introduction to Devices with Brillion(tm) Technology Portfolio of Products 3 GE Appliances and Lighting All Rights Reserved Brillion(tm) Suite of Home Energy Solutions Nucleus(tm) Smart Meter Other Devices Internet IHD Other Devices PCT Non-Meter Solution GE DRMS GEA Server 4 GE Appliances and Lighting All Rights Reserved Nucleus(tm) energy manager with Brillion(tm) technology Consumers can reduce electric usage by an average of 5% per year. 5 GE Appliances and Lighting All Rights Reserved GE Profile Appliances enabled with Brillion(tm) technology Delayed defrost during peak Delayed starts and temperature adjustments during peak Delayed start until off- peak Reduced energy usage 60%, DR- enabled Reduced wattage during peak When coupled with the Nucleus and a TOU
Microstructural Evolution of SnS Thin Films Grown by ...
About this Abstract. Meeting, 2012 TMS Annual Meeting & Exhibition. Symposium , Energy Nanomaterials. Presentation Title, Microstructural Evolution of SnS�...
YPdSn and YPd{sub 2}Sn: Structure, {sup 89}Y solid state NMR and {sup 119}Sn Moessbauer spectroscopy
The stannides YPdSn and YPd{sub 2}Sn were synthesized by high-frequency melting of the elements in sealed tantalum tubes. Both structures were refined on the basis of single crystal X-ray diffractometer data: TiNiSi type, Pnma, a=715.4(1), b=458.8(1), c=789.1(1) pm, wR2=0.0461, 510 F{sup 2} values, 20 variables for YPdSn and MnCu{sub 2}Al type, Fm3 Macron m, a=671.44(8), wR2=0.0740, 55 F{sup 2} values, 5 parameters for YPd{sub 2}Sn. The yttrium atoms in the new stannide YPdSn are coordinated by two tilted Pd{sub 3}Sn{sub 3} hexagons (ordered AlB{sub 2} superstructure). In the Heusler phase YPd{sub 2}Sn each yttrium atom has octahedral tin coordination and additionally eight palladium neighbors. The cubic site symmetry of yttrium is reflected in the {sup 119}Sn Moessbauer spectrum which shows no quadrupole splitting. In contrast, YPdSn shows a single signal at {delta}=1.82(1) mm/s subjected to quadrupole splitting of {Delta}E{sub Q}=0.93(1) mm/s. Both compounds have been characterized by high-resolution {sup 89}Y solid state NMR spectroscopy, which indicates the presence of strong Knight shifts. The spectrum of YPd{sub 2}Sn is characterized by an unusually large linewidth, suggesting the presence of a Knight shift distribution reflecting local disordering effects. The range of {sup 89}Y Knight shifts of several binary and ternary intermetallic yttrium compounds is briefly discussed. - Graphical abstract: YPdSn and YPd{sub 2}Sn: Structure, {sup 89}Y solid state NMR and {sup 119}Sn Moessbauer spectroscopy. Highlights: Black-Right-Pointing-Pointer Synthesis and structure of ternary stannides YPdSn and YPd{sub 2}Sn. Black-Right-Pointing-Pointer {sup 119}Sn Moessbauer spectroscopic investigation of YPdSn and YPd{sub 2}Sn. Black-Right-Pointing-Pointer {sup 89}Y solid state NMR of intermetallics.
Hoeting, Christoph [Institut fuer Anorganische und Analytische Chemie, Universitaet Muenster, Corrensstrasse 30, D-48149 Muenster (Germany); Eckert, Hellmut [Institut fuer Physikalische Chemie, Universitaet Muenster, Corrensstrasse 30, D-48149 Muenster (Germany); Langer, Thorsten; Schellenberg, Inga [Institut fuer Anorganische und Analytische Chemie, Universitaet Muenster, Corrensstrasse 30, D-48149 Muenster (Germany); Poettgen, Rainer, E-mail: email@example.com [Institut fuer Anorganische und Analytische Chemie, Universitaet Muenster, Corrensstrasse 30, D-48149 Muenster (Germany)
Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix
Longitudinal photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots grown pseudomorphically to the Si matrix are studied. Lines of optical transitions between hole levels of quantum dots and Si electronic states are observed. This allowed us to construct a detailed energy-level diagram of electron-hole levels of the structure. It is shown that hole levels of pseudomorphic Ge quantum dots are well described by the simplest 'quantum box' model using actual sizes of Ge islands. The possibility of controlling the position of the long-wavelength photosensitivity edge by varying the growth parameters of Si/Ge structures with Ge quantum dots is determined.
Talochkin, A. B., E-mail: firstname.lastname@example.com; Chistokhin, I. B. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
Fusion of radioactive $^{132}$Sn with $^{64}$Ni
Evaporation residue and fission cross sections of radioactive $^{132}$Sn on $^{64}$Ni were measured near the Coulomb barrier. A large sub-barrier fusion enhancement was observed. Coupled-channel calculations including inelastic excitation of the projectile and target, and neutron transfer are in good agreement with the measured fusion excitation function. When the change in nuclear size and shift in barrier height are accounted for, there is no extra fusion enhancement in $^{132}$Sn+$^{64}$Ni with respect to stable Sn+$^{64}$Ni. A systematic comparison of evaporation residue cross sections for the fusion of even $^{112-124}$Sn and $^{132}$Sn with $^{64}$Ni is presented.
J. F. Liang; D. Shapira; J. R. Beene; C. J. Gross; R. L. Varner; A. Galindo-Uribarri; J. Gomez del Campo; P. A. Hausladen; P. E. Mueller; D. W. Stracener; H. Amro; J. J. Kolata; J. D. Bierman; A. L. Caraley; K. L. Jones; Y. Larochelle; W. Loveland; D. Peterson
GE Upgrades Top Selling Advanced Gas Turbine
Oct 30, 2009 ... According to GE, a typical power plant operating two new 7FA gas turbines with a single steam turbine in combined cycle configuration would�...
Project Brief: General Electric, GE Global Research
... for rapidly routing electrical energy to customers from diverse sources such as wind and solar powered devices. RECIPIENT: General Electric, GE ...
Ge/SiGe quantum well devices for light modulation, detection, and emission.
??This PhD thesis is devoted to study electro-optic properties of Gemanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells (MQWs) for light modulation, detection, and emission on Si platform.� (more)
Chaisakul, Papichaya
GE Appliances: Order (2012-SE-1403)
Energy.gov (U.S. Department of Energy (DOE))
DOE ordered GE Appliances, a Division of General Electric Company to pay a $63,000 civil penalty after finding GE had privately labeled and distributed in commerce in the U.S. the 4-cubic-foot capacity refrigerator basic model SMR04GAZCS, which includes models SMR04GAZACS and SMR04GAZBCS.
Modeling of GE Appliances: Final Presentation
This report is the final in a series of three reports funded by U.S. Department of Energy Office of Electricity Delivery and Energy Reliability (DOE-OE) in collaboration with GE Appliances� through a Cooperative Research and Development Agreement (CRADA) to describe the potential of GE Appliances� DR-enabled appliances to provide benefits to the utility grid.
Fuller, Jason C.; Vyakaranam, Bharat; Leistritz, Sean M.; Parker, Graham B.
TEE-0077 - In the Matter of GE Appliances & Lighting | Department...
7 - In the Matter of GE Appliances & Lighting TEE-0077 - In the Matter of GE Appliances & Lighting The Decision and Order considers and Application for Exception filed by GE...
Monolithic Ge-on-Si lasers for integrated photonics
We report room temperature Ge-on-Si lasers with direct gap emission at 1590-1610 nm. Modeling of Ge/Si double heterojunction structures, which is supported by experimental results of Ge/Si LEDs, indicates the feasibility ...
Liu, Jifeng
Ge-on-Si laser for silicon photonics
Ge-on-Si devices are explored for photonic integration. Importance of Ge in photonics has grown and through techniques developed in our group we demonstrated low density of dislocations (<1x109cm-2) and point defects Ge ...
Camacho-Aguilera, Rodolfo Ernesto
Liquidus Projection of Thermoelectric Ag-Sn-Te Ternary System
Presentation Title, Liquidus Projection of Thermoelectric Ag-Sn-Te Ternary ... Ag Decorated Al Nanoparticles as Novel Ink Materials for Printed Electronics�...
Process for the manufacture of 117Sn diethylenetriaminepentaacetic acids
Novel methods are provided for the manufacture of .sup.117m Sn(Sn.sup.4+) DTPA. The method allows the use of DTPA, a toxic chelating agent, in an approximately 1:1 ratio to .sup.117m Sn(Sn.sup.4+) via either aqueous conditions, or using various organic solvents, such as methylene chloride. A pharmaceutical composition manufactured by the novel method is also provided, as well as methods for treatment of bone tumors and pain associated with bone cancer using the pharmaceutical composition of the invention.
Srivastava, Suresh C. (Setauket, NY); Li, Zizhong (Upton, NY); Meinken, George (Middle Island, NY)
Effect of Plastic Deformation on Sn Whisker Growth in Electroplated ...
Symposium, Pb-free Solders and Emerging Interconnect and Packaging Technologies. Presentation Title, Effect of Plastic Deformation on Sn Whisker Growth in�...
Physical properties of single crystalline BaSn{sub 5}
We present a comprehensive study of the binary intermetallic superconductor, BaSn{sub 5}. High-quality single crystalline BaSn{sub 5} was grown out of a Sn flux. Detailed thermodynamic and transport measurements were performed to study BaSn{sub 5}'s normal and superconducting state properties. This material appears to be a strongly coupled, multiband superconductor. H{sub c2}(T) is almost isotropic. De Haas�van Alphen oscillations were observed and two effective masses were estimated from the FFT spectra. Hydrostatic pressure causes a decrease in the superconducting transition temperature at the rate of ??0.053?�?0.001?K/kbar.
Lin, Xiao; Budko, Sergey; Canfield, Paul
General Electric in India GE | Open Energy Information
General Electric in India GE Jump to: navigation, search Name General Electric in India (GE) Place New Delhi, Delhi (NCT), India Zip 110015 Sector Services, Wind energy Product...
GE Appliances, a Division of GE Appliances, a Division of General Electric Company, Respondent ) ) ) ) ) ) ORDER By the General Counsel, U.S. Department of Energy: Case Number: 2012-SE-1403 1. In this Order, I adopt the attached Compromise Agreement entered into between the U.S. Department of Energy ("DOE") and GE Appliances, a Division of General Electric Company ("Respondent"). The Compromise Agreement resolves the case initiated after DOE was informed, based on test results made available as a result of verification testing by the Association of Home Appliance Manufacturers ("AHAM"), that aGE refrigerator basic model may not meet the energy conservation standard set forth in 10 C.F.R. § 430.32(a). 2. DOE and Respondent have negotiated the terms of the Compromise Agreement that
12 GeV Upgrade | Jefferson Lab
NLE Websites -- All DOE Office Websites
Science Science A Schematic of the 12 GeV Upgrade The 12 GeV Upgrade will greatly expand the research capabilities of Jefferson Lab, adding a fourth experimental hall, upgrading existing halls and doubling the power of the lab's accelerator. A D D I T I O N A L L I N K S: 12 GeV Home Public Interest Scientific Opportunities Hall D Status Updates Contacts Three-Year Accelerator Schedule 2014 - 2016 top-right bottom-left-corner bottom-right-corner 12 GeV Upgrade Physicists at Jefferson Lab are trying to find answers to some of nature's most perplexing questions about the universe by exploring the nucleus of the atom. Their goal is to answer such questions as: "What is the universe made of?" and "What holds everyday matter together?" In their search for answers, physicists smash electrons into atoms using
The greening of GE [alternative energy
General Electric (GE) Co., is now focused on alternative energy resources as it has begun manufacturing wind turbines and photovoltaics, invested in hydrogen fuel cells, and become a leader in the development of gasification equipment that could double ...
P. Fairley
Performance analysis of HD1: a 16 Tesla Nb3Sn dipole Magnet
Analysis of HD1: A 16 Tesla Nb 3 Sn Dipole Magnet S.of HD1b, an Upgraded 16 Tesla Nb 3 Sn Dipole Magnet�, This
Mattafirri, S.
N-1: Use of Nanostructured Sn Thin Film Anodes for Lithium Ion ...
XRD analyses proved that the thin film was made of nano crystalline Sn particles. The galvanostatic charge discharge results showed that the nano porous Sn�...
STM Survey of As/Ge(mnn) and P/Ge(mnn) Surfaces
DOE Green Energy (OSTI)
This paper contains a few representative results of a scanning tunneling microscope (STM) survey of Ge surfaces after exposure to arsenic and phosphorous.
McMahon, W. E.; Olson, J. M.
Host Galaxy Spectra and Consequences for SN Typing From The SDSS SN Survey
We present the spectroscopy from 5254 galaxies that hosted supernovae (SNe) or other transient events in the Sloan Digital Sky Survey II (SDSS-II). Obtained during SDSS-I, SDSS-II, and the Baryon Oscillation Spectroscopic Survey (BOSS), this sample represents the largest systematic, unbiased, magnitude limited spectroscopic survey of supernova (SN) host galaxies. Using the host galaxy redshifts, we test the impact of photometric SN classification based on SDSS imaging data with and without using spectroscopic redshifts of the host galaxies. Following our suggested scheme, there are a total of 1166 photometrically classified SNe Ia when using a flat redshift prior and 1126 SNe Ia when the host spectroscopic redshift is assumed. For 1024 (87.8%) candidates classified as likely SNe Ia without redshift information, we find that the classification is unchanged when adding the host galaxy redshift. Using photometry from SDSS imaging data and the host galaxy spectra, we also report host galaxy properties for use in ...
Olmstead, Matthew D; Sako, Masao; Bassett, Bruce; Brinkmann, J; Brownstein, Joel R; Brewington, Howard; Campbell, Heather; D'Andrea, Chris B; Dawson, Kyle S; Ebelke, Garrett L; Frieman, Joshua A; Galbany, Llu�s; Garnavich, Peter; Gupta, Ravi R; Hlozek, Renee; Jha, Saurabh W; Kunz, Martin; Lampeitl, Hubert; Malanushenko, Elena; Malanushenko, Viktor; Marriner, John; Miquel, Ramon; Montero-Dorta, Antonio D; Nichol, Robert C; Oravetz, Daniel J; Pan, Kaike; Schneider, Donald P; Simmons, Audrey E; Smith, Mathew; Snedden, Stephanie A
SN 2002bu-ANOTHER SN 2008S-LIKE TRANSIENT
We observed supernova (SN) 2002bu in the near-IR with the Hubble Space Telescope (HST), the mid-IR with the Spitzer Space Telescope, and in X-rays with Swift 10 years after the explosion. If the faint L {sub H} {approx} 10{sup 2} L {sub Sun} HST near-IR source at the transient position is the near-IR counterpart of SN 2002bu, then the source has dramatically faded between 2004 and 2012, from L {approx_equal} 10{sup 6.0} L {sub Sun} to L {approx_equal} 10{sup 4.5} L {sub Sun }. It is still heavily obscured, {tau} {sub V} {approx_equal} 5 in graphitic dust models, with almost all the energy radiated in the mid-IR. The radius of the dust emission is increasing as R{proportional_to}t {sup 0.7{+-}0.4} and the optical depth is dropping as {tau} {sub V}{proportional_to}t {sup -1.3{+-}0.4}. The evolution expected for an expanding shell of material, {tau} {sub V}{proportional_to}t {sup -2}, is ruled out at approximately 2{sigma}, while the {tau} {sub V}{proportional_to}t {sup -0.8} to t {sup -1} optical depth scaling for a shock passing through a pre-existing wind is consistent with the data. If the near-IR source is a chance superposition, the present-day source can be moderately more luminous, significantly more obscured and evolving more slowly. While we failed to detect X-ray emission, the X-ray flux limits are consistent with the present-day emissions being powered by an expanding shock wave. SN 2002bu is clearly a member of the SN 2008S class of transients, but continued monitoring of the evolution of the spectral energy distribution is needed to conclusively determine the nature of the transient.
Szczygiel, D. M.; Kochanek, C. S. [Department of Astronomy, Ohio State University, 140 W. 18th Ave., Columbus, OH 43210 (United States); Dai, X. [Department of Physics and Astronomy, University of Oklahoma, 440 W. Brooks Street, Norman, OK 73019 (United States)
Waveguide Electroabsorption Modulator on Si Employing Ge/SiGe Quantum Wells
Waveguide Electroabsorption Modulator on Si Employing Ge/SiGe Quantum Wells Onur Fidaner, Ali K. 2007 Optical Society of America OCIS codes: (230.4110) Modulators ; (230.5590) Quantum-well devices Low wells opened up the possibility of realizing small and power-efficient electroabsorption modulators
Miller, David A. B.
Solderability of environmentally exposed Sn-plated surfaces
Solderability of Class II environmentally exposed Ni-Sn plated Cu substrates was evaluated with 60Sn-40Pb solder. Tin thickness were 10, 50, and 150 {mu}in. The 10 {mu}in. plating gave the smallest solder meniscus rise. A general decrease in contact angle, or increase in wettability, was observed with increasing Sn plating. The environmental exposures retarded the wetting rate and increased the time to maximum wetting, particularly with only 10 {mu}in. of Sn. Although the solderability of the 50 and 150 {mu}in. surfaces were not significantly affected by the test conditions, an intermediate plating thickness of 100 {mu}in. is preferred for processing flexibility. 13 refs., 6 figs., 1 tab.
Hosking, F.M.; Sorensen, N.R.
Solderability and environmental testing of Sn-plated surfaces
The effect of atmospheric corrosion on the solderability of Sn plated surfaces was evaluated with 60Sn-40Pb solder. Tin thicknesses of 10, 50, and 150 {mu}in on Ni plated Cu were studied. The 10 {mu}in. plating gave the smallest solder meniscus rise. A general decrease in contact angle, or increase in wettability, was observed with increasing Sn plating. The environmental exposures retarded the wetting rate and increased the time to maximum wetting, particularly with only 10 {mu}in. of Sn. Although the solderability of the 50 and 150 {mu}in. surfaces wee not significantly affected by the test conditions, an intermediate plating thickness of 100 {mu}in. is preferred for processing flexibility. 13 refs., 7 figs., 1 tab.
Sorensen, N.R.; Hosking, F.M.
GE Hitachi Nuclear Energy | Open Energy Information
GE Hitachi Nuclear Energy GE Hitachi Nuclear Energy Jump to: navigation, search Name GE Hitachi Nuclear Energy Place Wilmington, North Carolina Zip 28402 Sector Efficiency, Services Product GE Hitachi Nuclear Energy develops advanced light water reactors and offers products and services used by operators of boiling water reactor (BWR) nuclear power plants to improve efficiency and boost output. Coordinates 42.866922°, -72.868494° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":42.866922,"lon":-72.868494,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}
CORPORATE RESEARCH & DEVELOPMENT (GE-CRD) CORPORATE RESEARCH & DEVELOPMENT (GE-CRD) FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN PATENT RIGHTS UNDER DOE COOPERATIVE AGREEMENT NO. DE-FC07- 96ID13406; W(A)-96-004; CH-0894 The Petitioner, GE Corporate Research & Development (GE-CRD) has requested a waiver of domestic and foreign patent rights for all subject inventions arising from its participation under the above referenced cooperative agreement entitled "Electric Vehicle Program - Ultracapacitor/Battery Electronic Interface Project." The objective of the cooperative agreement is to develop prototype electronic interface hardware to verify the design of the power electronics and basic control strategy for an advanced electric vehicle drive line that uses ultracapacitors to load level the main storage battery. The
GE Lighting Solutions: Order (2013-SE-4901) | Department of Energy
Order (2013-SE-4901) GE Lighting Solutions: Order (2013-SE-4901) April 4, 2013 DOE ordered General Electric Lighting Solutions, LLC to pay a 5,360 civil penalty after finding GE...
Amorphous Hierarchical Porous GeOx as High-Capacity Anodes for LiIon Batteries with Very Long Cycling Life
Many researchers have focused in recent years on resolving the crucial problem of capacity fading in Li ion batteries when carbon anodes are replaced by other group-IV elements (Si, Ge, Sn) with much higher capacities. Some progress was achieved by using different nanostructures (mainly carbon coatings), with which the cycle numbers reached 100-200. However, obtaining longer stability via a simple process remains challenging. Here we demonstrate that a nanostructure of amorphous hierarchical porous GeO{sub x} whose primary particles are {approx}3.7 nm diameter has a very stable capacity of {approx}1250 mA h g{sup -1} for 600 cycles. Furthermore, we show that a full cell coupled with a Li(NiCoMn){sub 1/3}O{sub 2} cathode exhibits high performance.
Wang, X.L.; Han, W.-Q.; Chen, H.; Bai, J.; Tyson, T.A.; Yu, X.-Q.; Wang, X.-J.; Yang, X.-Q.
Studies of nuclei close to {sup 132}Sn using single-neutron transfer reactions
Neutron transfer reactions were performed in inverse kinematics using radioactive ion beams of {sup 132}Sn, {sup 130}Sn, and {sup 134}Te and deuterated polyethylene targets. Preliminary results are presented. The Q-value spectra for {sup 133}Sn, {sup 131}Sn and {sup 135}Te reveal a number of previously unobserved peaks. The angular distributions are compatible with the expected lf{sub 7/2} nature of the ground state of {sup 133}Sn, and 2p{sub 3/2} for the 3.4 MeV state in {sup 131}Sn.
Jones, K. J. [Department of Physics and Astronomy, University of Tennessee, Knoxville, TN 37996 (United States); Department of Physics and Astronomy, Rutgers University, New Brunswick, NJ 08903 (United States); Pain, S. D. [Department of Physics and Astronomy, Rutgers University, New Brunswick, NJ 08903 (United States); Physics Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Kozub, R. L.; Howard, J. A.; O'Malley, P. D.; Paulauskas, S. V.; Shriner, J. F.; Sissom, D. J. [Department of Physics, Tennessee Technological University, Cookeville, TN 38505 (United States); Adekola, A. S. [Department of Physics and Astronomy, Ohio University, Athens, OH 45701 (United States); Bardayan, D. W.; Blackmon, J. C.; Liang, J. F.; Nesaraja, C. D.; Shapira, D.; Smith, M. S. [Physics Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Catford, W. N.; Harlin, C.; Patterson, N. P.; Swan, T. P.; Wilson, G. L. [Department of Physics, University of Surrey, Guildford, Surrey, GU2 7XH (United Kingdom)] (and others)
GE Wind Energy Germany | Open Energy Information
Jump to: navigation, search Jump to: navigation, search Name GE Wind Energy Germany Place Salzbergen, Germany Zip 48499 Sector Wind energy Product Germany-based, division of GE Wind Energy wind turbine manufacturer and supplier. Coordinates 52.323136°, 7.347278° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":52.323136,"lon":7.347278,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}
The 115 GeV Higgs Odyssey
On his way home from Troy, Odysseus had arrived within reach of Ithaca when a great storm blew up. He was swept away, and only several years later was he able to return to reclaim his rights from the rapacious suitors, with the aid of his son Telemachus. Some wonder whether this epic is repeating itself, if the Higgs weighs 115 GeV. If so, are CMS and ATLAS cast in the role of Telemachus? In this paper, I first discuss how close to Ithaca LEP may have been, the fact that a 115 GeV Higgs boson would disfavour technicolour, its potential implications for supersymmetry, and finally the prospects for completing the Higgs Odyssey.
John Ellis
Ellis, Jonathan Richard
Observation of beta decay of In-115 to the first excited level of Sn-115
In the context of the LENS R&D solar neutrino project, the gamma spectrum of a sample of metallic indium was measured using a single experimental setup of 4 HP-Ge detectors located underground at the Gran Sasso National Laboratories (LNGS), Italy. A gamma line at the energy (497.48 +/- 0.21) keV was found that is not present in the background spectrum and that can be identified as a gamma quantum following the beta decay of In-115 to the first excited state of Sn-115 (9/2+ --> 3/2+). This decay channel of In-115, which is reported here for the first time, has an extremely low Q-value, Q = (2 +/- 4) keV, and has a much lower probability than the well-known ground state-ground state transition, being the branching ratio b = (1.18 +/- 0.31) 10^-6. This could be the beta decay with the lowest known Q-value. The limit on charge non-conserving beta decay of In-115 is set at 90% C.L. as tau > 4.1 10^20 y.
C. M. Cattadori; M. De Deo; M. Laubenstein; L. Pandola; V. I. Tretyak
Booster 6-GeV study
Since a wider aperture has been obtained along the Booster beam line, this opens the opportunity for Booster running a higher intensity beam than ever before. Sooner or later, the available RF accelerating voltage will become a new limit for the beam intensity. Either by increasing the RFSUM or by reducing the accelerating rate can achieve the similar goal. The motivation for the 6-GeV study is to gain the relative accelerating voltage via a slower acceleration.
Yang, Xi; Ankenbrandt, Charles M.; Pellico, William A.; Lackey, James; Padilla, Rene; /Fermilab; Norem, J.; /Argonne
A wider aperture, which has been obtained along the Booster beam line recently, brings the opportunity to run beams with the intensity higher than ever before. Sooner or later, the available RF accelerating voltage will become a new limit for the beam intensity. Extra accelerating voltages can be achieved either by increasing the RFSUM or by reducing the accelerating rate via a slower acceleration, and this motivates the 6-GeV study.
Yang, Xi; Ankenbrandt, Charles M.; Pellico, William A.; Lackey, James; Padilla, Rene; /Fermilab; Norem, James; /Argonne
An optimistic CoGeNT analysis
Inspired by a recently proposed model of millicharged atomic dark matter (MADM), we analyze several classes of light dark matter models with respect to CoGeNT modulated and unmodulated data, and constraints from CDMS, XENON10 and XENON100. After removing the surface contaminated events from the original CoGeNT data set, we find an acceptable fit to all these data (but with the modulating part of the signal making a statistically small contribution), using somewhat relaxed assumptions about the response of the null experiments at low recoil energies, and postulating an unknown modulating background in the CoGeNT data at recoil energies above 1.5 keVee. We compare the fits of MADM---an example of inelastic magnetic dark matter---to those of standard elastically and inelastically scattering light WIMPs (eDM and iDM). The iDM model gives the best fit, with MADM close behind. The dark matter interpretation of the DAMA annual modulation cannot be made compatible with these results however. We find that the inclusion of a tidal debris component in the dark matter phase space distribution improves the fits or helps to relieve tension with XENON constraints.
James M. Cline; Zuowei Liu; Wei Xue
Nov 3, 2011 ... in Sn generated by {uuT : u ? C}. .... u + ? x, u ? ?x ? K. Since L ? ?(K), we must have ?L(x) = L(u + ?x) ? K ..... [13] M.S. Gowda and Y. Song.
Prompt Gamma Rays in {sup 77}Ge after Neutron Capture on {sup 76}Ge
The observation of neutrinoless double beta decay would be proof of the Majorana nature of the neutrino. Half-lives for these decays are very long (for {sup 76}Ge:>10{sup 25} y), so background reduction and rejection is the major task for double beta experiments. The GERDA (GERmanium Detector Array) experiment at the Gran Sasso Laboratory of the INFN (LNGS) searches for neutrinoless double beta decay of {sup 76}Ge. The isotope {sup 76}Ge is an ideal candidate because it can be used as source and detector at the same time. A large remaining contribution to the background arises from the prompt gamma cascade after neutron capture by {sup 76}Ge followed by {beta}{sup -}-decay of {sup 77}Ge. Since the prompt gamma decay scheme is poorly known, measurements with isotopically enriched Germanium samples were carried out at the PGAA facility at the research reactor FRM II (Munich). With the known prompt gamma spectrum it will be possible to improve the overall veto efficiency of the GERDA experiment.
Meierhofer, Georg; Grabmayr, Peter; Jochum, Josef [Physikalisches Institut, Eberhard Karls Universitaet Tuebingen, Auf der Morgenstelle 14, 72076 Tuebingen (Germany); Canella, Lea [Institut fuer Radiochemie, Technische Universitaet Muenchen, Walther-Meissner-Str. 3, 85748 Garching (Germany); Jolie, Jan; Kudejova, Petra; Warr, Nigel [Institut fuer Kernphysik, Universitaet zu Koeln, Zuelpicher Str. 77, 50937 Cologne (Germany)
Sn/SnOx Core-Shell Nanospheres: Synthesis, Anode Performance in Li Ion Batteries, and Superconductivity
Sn/SnO{sub x} core?shell nanospheres have been synthesized via a modified polyol process. Their size can be readily controlled by tuning the usage of surface stabilizers and the temperature. Anode performance in Li ion batteries and their superconducting properties is detailed. As anode materials, 45 nm nanospheres outperform both larger and smaller ones. Thus, they exhibit a capacity of about 3443 mAh cm{sup -3} and retain about 88% of after 10 cycles. We propose a model based on the microstructural evolution to explain the size impact on nanosphere performance. Magnetic measurements indicate that the nanospheres become superconducting below the transition temperature T{sub C} = 3.7 K, which is similar to the value obtained in bulk tin. Although T{sub C} does not significantly change with the size of the Sn core, we determined that the critical field H{sub C} of nanospheres can be as much as a factor of 30 larger compared to the bulk value. Alternating current measurements demonstrated that a transition from conventional to filamentary superconducting structure occurs in Sn/SnO{sub x} particles as their size increases. The transition is determined by the relationship between the particle size and the magnetic field penetration depth.
Wang, X.L.; Feygenson, M.; Aronson, M.C.; Han, W.-Q.
A Second UV "Light Bulb" behind the SN 1006 Remnant
A point X-ray source located 9 arcmin northeast of the center of SN~1006 has been spectroscopically identified as a background QSO, with a redshift of 0.335. The object is moderately bright, with magnitude V=18.3. If its ultraviolet spectrum is typical of low-z quasars, this object will be a second (after the Schweizer-Middleditch star) source to use for absorption spectroscopy of material within SN 1006. Absorption spectra provide a unique probe for unshocked ejecta within this supernova remnant, and can possibly solve the long-standing problem of "missing" iron in the remnants of Type Ia supernovae.
Winkler, P F; Long, Knox S.
P. Frank Winkler; Knox S. Long
Aluminum-stabilized Nb/sub 3/Sn superconductor
This patent discloses an aluminum-stabilized Nb/sub 3/Sn superconductor and process for producing same, utilizing ultrapure aluminum. Ductile components are co-drawn with aluminum to produce a conductor suitable for winding magnets. After winding, the conductor is heated to convert it to the brittle Nb/sub 3/Sn superconductor phase, using a temperature high enough to perform the transformation but still below the melting point of the aluminum. This results in reaction of substantially all of the niobium, while providing stabilization and react-in-place features which are beneficial in the fabrication of magnets utilizing superconducting materials.
Scanlan, R.M.
Aluminum-stabilized Nb[sub 3]Sn superconductor
Disclosed are an aluminum-stabilized Nb[sub 3]Sn superconductor and process for producing same, utilizing ultrapure aluminum. Ductile components are co-drawn with aluminum to produce a conductor suitable for winding magnets. After winding, the conductor is heated to convert it to the brittle Nb[sub 3]Sn superconductor phase, using a temperature high enough to perform the transformation but still below the melting point of the aluminum. This results in reaction of substantially all of the niobium, while providing stabilization and react-in-place features which are beneficial in the fabrication of magnets utilizing superconducting materials. 4 figs.
Pb-free Sn-Ag-Cu ternary eutectic solder
A Pb-free solder includes a ternary eutectic composition consisting essentially of about 93.6 weight % Sn-about 4.7 weight % Ag-about 1.7 weight % Cu having a eutectic melting temperature of about 217.degree. C. and variants of the ternary composition wherein the relative concentrations of Sn, Ag, and Cu deviate from the ternary eutectic composition to provide a controlled melting temperature range (liquid-solid "mushy" zone) relative to the eutectic melting temperature (e.g. up to 15.degree. C. above the eutectic melting temperature).
Anderson, Iver E. (Ames, IA); Yost, Frederick G. (Cedar Crest, NM); Smith, John F. (Ames, IA); Miller, Chad M. (Ames, IA); Terpstra, Robert L. (Ames, IA)
Test Results for HD1, a 16 Tesla Nb3Sn Dipole Magnet
Design and Fabrication ofa 16 Tesla Nb 3 Sn Dipole Magnet",Test Results for HD 1, a 16 Tesla Nb 3 Sn Dipole Magnet A.F.and bore fields above 16 Tesla. II. MAGNET FEATURES AND TEST
Lietzke, A.F.
Dilute magnetic semiconductor Cu2FeSnS4 nanocrystals with a novel zincblende structure
Diluted magnetic semiconductor Cu2FeSnS4 nanocrystals with a novel zincblende structure have been successfully synthesized by a hot-injection approach. Cu+, Fe2+, and Sn4+ ions occupy the same position in the ...
Xiaolu Liang; Xianhua Wei; Daocheng Pan
Thermodynamic Model for SnO2(cr) and SnO2(am) Solubility in the Aqueous Na+-H+ -OH- -Cl- -H2O System
The solubility of SnO2(cassiterite) was studied at 23 ? 2?C as functions of time (7 � 49 days) and pH value (0-14.5). Steady state concentrations were reached in < 7 days. The data were interpreted using the SIT model. The data shows that SnO2(cassiterite) is the stable phase at pH values of < ~11.7. These extensive data provided a log10 K0 value of -64.39 � 0.30 for the reaction (SnO2(cassiterite) + 2H2O = Sn4+ + 4OH-) and values of 1.86 � 0.30, ? -0.62, -9.20 � 0.34, and -20.28 � 0.34 for the reaction (Sn4+ + nH2O = Sn(OH)n4-n + nH+) with values of �n� equal to 1, 4, 5, and 6 respectively. These thermodynamic hydrolysis constants were used to reinterpret the extensive literature data for SnO2(am) solubility, which provided a log10 K0 value of -61.80 � 0.29 for the reaction (SnO2(am) + 2H2O = Sn4+ + 4OH-). SnO2(cassiterite) is unstable under highly alkaline conditions (NaOH concentrations > 0.003 mol.dm-3) and transforms to a double salt of SnO2 and NaOH. Although additional well-focused studies will be required for confirmation, the experimental data in the highly alkaline region (0.003 to 3.5 mol.dm-3 NaOH) can be well described with log10 K0 of -5.29 � 0.35 for the reaction (Na2Sn(OH)6(s) = Na2Sn(OH)6(aq)).
Rai, Dhanpat; Yui, Mikazu; Schaef, Herbert T.; Kitamura, Akira
Reactive dc magnetron sputtering of (GeO{sub x}-SiO{sub 2}) superlattices for Ge nanocrystal formation
The motivation of this work is the tailored growth of Ge nanocrystals for photovoltaic applications. The use of superlattices provides a reliable method to control the Ge nanocrystal size after phase separation. In this paper, we report on the deposition of (GeO{sub x}-SiO{sub 2}) superlattices via reactive dc magnetron sputtering and the self-ordered Ge nanocrystal formation during subsequent annealing. Attention is directed mainly to define proper deposition conditions for tuning the GeO{sub x} composition between elemental Ge (x=0) and GeO{sub 2} (x=2) by the variation in the deposition temperature and the oxygen partial pressure. A convenient process window has been found which allows sequential GeO{sub x}-SiO{sub 2} deposition without changing the oxygen partial pressure during deposition. The phase separation and Ge nanocrystal formation after subsequent annealing were investigated with in situ x-ray scattering, Raman spectroscopy, and electron microscopy. By these methods the existence of 2-5 nm Ge nanocrystals at annealing temperatures of 600-750 deg. C has been confirmed which is within the superlattice stability range. The technique used allows the fabrication of superlattice stacks with very smooth interfaces (roughnessnanocrystal layers could be separated by very thin SiO{sub 2} films (d<3 nm) which offers interesting possibilities for charge transport via direct tunneling.
Zschintzsch, M.; Jeutter, N. M.; Borany, J. von; Krause, M.; Muecklich, A. [Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden Rossendorf e.V., P.O. Box 51 01 19, 01314 Dresden (Germany)
GE-Hitachi Nuclear Energy Americas LLC
This letter provides information concerning the evaluation now completed by GE Hitachi Nuclear Energy (GEH) regarding a potential non-conservatism in the calculation of Main Steam Line (MSL) choked flow rates. As stated herein, GEH has concluded that this is not a Reportable Condition for all U.S. BWR/2-6 plants in accordance with the requirements of 10 CFR 21.21(d). This letter closes the supplemental 60-Day Interim Report Notification (MFN 12-111 R1), provided on December 12, 2102, per �21.21(a)(2). If you have any questions, please call me at (910) 819-4491. Sincerely,
Dale E. Porter; Dale E. Porter; S. S. Philpott; S. J. Pannier
Muon interactions at 490 GeV
E665 is a new, high-energy muon scattering experiment at Fermilab. Data were taken with a 490 GeV muon beam incident on deuterium, hydrogen, and xenon targets during the 1987--88 fixed target run. These data are being analyzed with various physics objectives in mind, and a number of preliminary results have been obtained. This paper presents four of results, specifically the small {chi}{sub Bj} ratio of xenon and deuterium cross sections, inclusive hadron distributions, two jet signals, and exclusive {rho}{sup 0} production.
Schmitt, M. (Fermi National Accelerator Lab., Batavia, IL (USA) Harvard Univ., Cambridge, MA (USA))
GE Uses DOE Advanced Light Sources to Develop Revolutionary Battery
Office of Science (SC) Website
GE Uses DOE Advanced Light Sources to Develop GE Uses DOE Advanced Light Sources to Develop Revolutionary Battery Technology Discovery & Innovation Stories of Discovery & Innovation Brief Science Highlights SBIR/STTR Highlights Contact Information Office of Science U.S. Department of Energy 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 06.13.11 GE Uses DOE Advanced Light Sources to Develop Revolutionary Battery Technology Company is constructing a new battery factory in Upstate New York that is expected to create 300+ jobs. Print Text Size: A A A Subscribe FeedbackShare Page Click to enlarge photo. Enlarge Photo GE's new Image courtesy of GE GE's new "Durathon(tm)" sodium metal halide battery. The story of American manufacturing over the past two decades has too often been a tale of outsourcing, off-shoring, and downsizing-not least in
Formation of NiGe through germanium oxide on Ge(001) substrate
Germanium based devices are of interest due to their performance potential. The use of germanium as source and drain requires low resistance access achieved by the formation of germanide (metal-germanium compound). The nickel mono-germanide (NiGe) is ...
F. Nemouchi, V. Carron, J. L. L�B�R, L. Vandroux, Y. Morand, T. Morel, J. P. Barnes
Electroactive complex in thermally treated Ge-Si crystals
It is shown by Hall measurements that quenching complexly doped Ge{sub 1-x}Si{sub x} (0 { crystals with copper.
Azhdarov, G. Kh., E-mail: firstname.lastname@example.com [Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan); Zeynalov, Z. M. [Ganja State University (Azerbaijan); Zakhrabekova, Z. M. [Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan); Kyazimova, A. I. [Ganja State University (Azerbaijan)
Titan Propels GE Wind Turbine Research into New Territory | ornl...
(ALCC) award, GE is using the hybrid CPUGPU Cray XK7 Titan supercomputer managed by the Oak Ridge Leadership Computing Facility (OLCF) at Oak Ridge National Laboratory to...
GE Appliances: Order (2010-CE-2113) | Department of Energy
Order (2010-CE-2113) GE Appliances: Order (2010-CE-2113) September 27, 2010 DOE issued an Order after entering into a Compromise Agreement with General Electric Appliances after...
GE Wind Energy | Open Energy Information
Wind Energy Wind Energy Jump to: navigation, search Name GE Wind Energy Place Atlanta, Georgia Zip GA 30339 Sector Wind energy Product GE's wind energy division, formed as a result of the purchase of almost all of Enron Wind Corporation's assets. Provides power plant design, engineering and site selection, as well as operation and maintenance. Coordinates 33.748315°, -84.391109° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.748315,"lon":-84.391109,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}
MU(& Ge-+v,
Office of Legacy Management (LM)
fil fil MU(& Ge-+v, . !d R&arch & Development b This document consists of 6 Contract Ho. pages and - . --------------_____---. figures No.--~--of.--~~-_-copies, Series,&,, This subcontract entered into this 20 day 0fSepte~ber , 1943, by and between the University of Cliicago, a corporation not for pecuniary profit organized under the ICVS of the Stnto of Illinois, of Chicago, Illinois (hereinafter called "the Contractor") and Yiolverine Tube Divisionof Caluzet 2 Eecla Consolidated Co;-,er co, . a cor?orntion organized under the laws cf the State of l~lch~;an - of Detroit, I:ichigan --- (hersinnftcr called "the Subcontractoi"). WIEHEAS, tho Contractor has heretofore onterod into a contract v;ith the United States of America (rcprcse;!tcd by its dtlly designated
3 GeV Injector Design Handbook
This Design Handbook is intended to be the main reference book for the specifications of the 3 GeV SPEAR booster synchrotron project. It is intended to be a consistent description of the project including design criteria, key technical specifications as well as current design approaches. Since a project is not complete till it's complete changes and modifications of early conceptual designs must be expected during the duration of the construction. Therefore, this Design Handbook is issued as a loose leaf binder so that individual sections can be replaced as needed. Each page will be dated to ease identification with respect to latest revisions. At the end of the project this Design Handbook will have become the 'as built' reference book of the injector for operations and maintenance personnel.
Wiedemann, H.; /SLAC, SSRL
H2S molecular beam passivation of Ge(001)
A fundamental issue regarding the introduction of high-mobility Ge channels in CMOS circuits is the electrical passivation of the interface with the high-k gate dielectric. In this paper, we investigate the passivation of p-Ge(001) using molecular H"2S. ... Keywords: H2S, High-� semiconductors, Molecular beam epitaxy, Passivation
C. Merckling; Y. C. Chang; C. Y. Lu; J. Penaud; M. El-Kazzi; F. Bellenger; G. Brammertz; M. Hong; J. Kwo; M. Meuris; J. Dekoster; M. M. Heyns; M. Caymax
Ge epitaxial refill deposition techniques for fabricating pedestal transistor structures
An etch-epitaxial refill technique is described for the fabrication of integrated high-speed Ge transistor structures having a pedestal configuration. The device areas surrounding 0.1 ohm-cm mesa structures were refilled with Ge having a resistivity ...
V. J. Silvestri; T. B. Light; H. N. Yu; A. Reisman
Secretary Chu Speaks at GE Solar Facility | Department of Energy
Chu Speaks at GE Solar Facility Chu Speaks at GE Solar Facility Secretary Chu Speaks at GE Solar Facility November 18, 2011 - 1:19pm Addthis Secretary Steven Chu's remarks, as prepared for delivery, at the General Electric Solar Facility in Arvada, Colorado. Thank you, Fred [Seymour], for the introduction. GE is a leader in energy innovation. Thomas Edison, the father of GE, once said, "I'd put my money on the sun and solar energy. What a source of power!" I imagine he would be amazed by the solar technology that is tested here. It's great to be in Colorado, a state that is at the forefront of the clean energy economy and has more solar jobs per capita than any other state[i]. I'm here at a critical time for America's energy future. It's a time of challenge, but it's also a time of opportunity.
GE Nucleus for Residential Energy Use Education, Home Energy
GE Nucleus for Residential Energy Use Education, Home Energy GE Nucleus for Residential Energy Use Education, Home Energy Management/Control, Residential Energy Integration Speaker(s): William Watts Date: August 4, 2011 - 12:00pm Location: 90-3122 Seminar Host/Point of Contact: Janie Page Home Energy Gateways offer a single point of access to the AMI Smart Meter into the home. The Nucleus is GE's home energy management gateway. The GE Nucleus securely communicates to a Smart Meter and delivers real-time whole home energy consumption data for display to the Consumer. The Consumer is able to visualize their energy usage habits on a Client that is connected via TLS encryption to the WiFi or Ethernet interface of the Nucleus. The Nucleus records history of the consumer's usage and cost data for tracking of energy consumption habits. GE has a suite of Smart Appliances that
GE Lighting Solutions: Noncompliance Determination (2013-SE-4901) |
Noncompliance Determination (2013-SE-4901) Noncompliance Determination (2013-SE-4901) GE Lighting Solutions: Noncompliance Determination (2013-SE-4901) January 11, 2013 DOE issued a Notice of Noncompliance Determination to General Electric Lighting Solutions finding that various models of traffic signal modules do not comport with the energy conservation standards. DOE determined the products were noncompliant based on the company's own testing. GE Lighting Solutions must immediately notify each person (or company) to whom GE Lighting Solutions distributed the noncompliant products that the products do not meet Federal standards. In addition, GE Lighting Solutions must provide to DOE documents and records showing the number of units GE Lighting Solutions distributed and to whom. The manufacturer
Polarized Proton Collisions at 205 GeV at RHIC
The Brookhaven Relativistic Heavy Ion Collider (RHIC) has been providing collisions of polarized protons at a beam energy of 100 GeV since 2001. Equipped with two full Siberian snakes in each ring, polarization is preserved during acceleration from injection to 100 GeV. However, the intrinsic spin resonances beyond 100 GeV are about a factor of 2 stronger than those below 100 GeV making it important to examine the impact of these strong intrinsic spin resonances on polarization survival and the tolerance for vertical orbit distortions. Polarized protons were first accelerated to the record energy of 205 GeV in RHIC with a significant polarization measured at top energy in 2005. This Letter presents the results and discusses the sensitivity of the polarization survival to orbit distortions.
Bai, M.; Roser, T.; Ahrens, L.; Alessi, J.; Beebe-Wang, J.; Blaskiewicz, M.; Bravar, A.; Brennan, J.M.; Bruno, D.; Courant, E.; Drees, A.; Fischer, W.; Gardner, C.; Gill, R.; Glenn, J.; Huang, H.; Kewisch, J.; Luccio, A.; Luo, Y.; Pilat, F. [Brookhaven National Laboratory, Upton, New York 11973 (United States)] (and others)
Performance Comparison of Nb3Sn Magnets at LBNL
The Superconducting Magnet group at Lawrence Berkeley National Laboratory has been successfully developing Nb{sub 3}Sn high-field dipole magnet technology for the last ten years. Noteworthy magnet tests include D20 (50mm bore, 4-layer cos{theta}, 12.8 T, accelerator quality dipole), and recent racetrack dipoles: (1) RTI (2-layer, 12 T, no bore, no training), (2) RD3b (3-layer, 14.7 T, 10mm bore), (3) RD3c (3-layer, 10 T, low-harmonics 35mm bore), and (4) some small Nb{sub 3}Sn magnets that utilized new technology. The performance of these magnets is summarized, comparing (1) cable and magnet geometry parameters, (2) training behavior, (3) ramp rate sensitivity, (4) RRR measurements, (5) peak temperatures and voltages, and (6) fast flux adjustments that occur during ramping.
Chiesa, L.; Caspi, S.; Coccoli, M.; Dietderich, D.R.; Ferracin, P.; Gourlay, S.A.; Hafalia, R.r.; Lietzke, A.F.; McInturff, A.D.; Sabbi, G.; Scanlan, R.M.
Synthesis of SnO{sub 2} Nanoparticles Using Ultrasonication
The use of ultrasonic energy for chemical synthesis has recently become an interesting and growing area of research. Using this form of energy, we have synthesized nanoparticles of SnO{sub 2}(8-30 nm) at room temperature by a sonication assisted precipitation technique. In order to understand the effect of ultrasonic energy on particle size and their distribution, the precipitation time was varied during the preparation. A sonication time of 3 h was found to be optimum to produce SnO{sub 2} nanoparticles having size below 10 nm. We found that a gradual increase of the sonication time gradually decreases the particle size with interesting morphology and increased surface area. The butane sensing properties of the synthesized powders exhibited a direct influence of the sonication time on the sensing properties. A 3 h sonicated sample, exhibited a maximum response of around 98.88% towards 5000 ppm butane at 450 deg. C with a fast recovery time.
Majumdar, Sanhita; Devi, P. Sujatha [Nano-Structured Materials Division, Central Glass and Ceramic Research Institute, Council of Scientific and Industrial Research, 196 Raja S.C. Mullick Road, Kolkata 700032 (India)
Novel approaches to low temperature transient liquid phase bonding in the In-Sn/Cu and In-Sn-Bi/Cu systems
A fluxless low temperature transient liquid phase (LTTLP) bonding process was studied as a method of producing Cu/Cu joints below 125�C and 75�C using interlayer alloys from the In-Sn and In-Sn-Bi systems. Using thermodynamic ...
Fischer, David S., Ph. D. Massachusetts Institute of Technology
We report optical and mid-infrared photometry of SN 1980K between 2004 and 2010, which shows slow monotonic fading consistent with previous spectroscopic and photometric observations made 8-17 yr after outburst. The slow rate of change over two decades suggests that this evolution may result from scattered and thermal light echoes off of extended circumstellar material. We present a semi-analytic dust radiative-transfer model that uses an empirically corrected effective optical depth to provide a fast and robust alternative to full Monte Carlo radiative-transfer modeling for homogenous dust at low to intermediate optical depths. We find that unresolved echoes from a thin circumstellar shell 14-15 lt-yr from the progenitor, and containing {approx}< 0.02 M{sub Sun} of carbon-rich dust, can explain the broadband spectral and temporal evolution. The size, mass, and dust composition are in good agreement with the contact discontinuity observed in scattered echoes around SN 1987A. The origin of slowly changing high-velocity [O I] and H{alpha} lines is also considered. We propose an origin in shocked high-velocity metal-rich clumps of ejecta, rather than arising in the impact of ejecta on slowly moving circumstellar material, as is the case with hot spots in SN 1987A.
Sugerman, Ben E. K. [Department of Physics and Astronomy, Goucher College, 1021 Dulaney Valley Road, Baltimore, MD 21208 (United States); Andrews, Jennifer E. [Department of Astronomy, University of Massachusetts, 710 North Pleasant Street, Amherst, MA 01003 (United States); Barlow, Michael J. [Department of Physics and Astronomy, University College London, Gower Street, London WC1E 6BT (United Kingdom); Clayton, Geoffrey C. [Department of Physics and Astronomy, Lousiana State University, 202 Nicholson Hall, Baton Roughe, LA 70803 (United States); Ercolano, Barbara [Excellence Cluster 'Universe', Universitaets-Sternwarte Muenchen, Scheinerstr. 1, 81679 Muenchen (Germany); Ghavamian, Parviz [Department of Physics, Astronomy and Geosciences, Towson University, Smith Hall, Towson, MD 21252 (United States); Kennicutt, Robert C. Jr. [Institute of Astronomy, University of Cambridge, Madingley Road, Cambridge, CM3 0HA (United Kingdom); Krause, Oliver [Max Planck Institute for Astronomy, Koenigstuhl 17, 69117 Heidelberg (Germany); Meixner, Margaret [Space Telescope Science Institute, 3700 San Martin Drive, Baltimore, MD 21218 (United States); Otsuka, Masaaki, E-mail: email@example.com [Institute of Astronomy and Astrophysics, Academia Sinica, Taipei 10617, Taiwan (China)
Comparison Between Research-Grade SnO2 and Commercial Available SnO2 for Thin-Film CdTe Solar Cell (Poster)
A comparison between research-grade, tin-oxide (SnO{sub 2}) thin films and those available from commercial sources is performed. The research-grade SnO{sub 2} film is fabricated at NREL by low-pressure metal-organic chemical vapor deposition. The commercial SnO{sub 2} films are Pilkington Tec 8 and Tec 15 fabricated by atmospheric-pressure chemical vapor deposition. Optical, structural, and compositional analyses are performed. From the optical analysis, an estimation of the current losses due to the SnO{sub 2} layer and glass is provided. Our analysis indicates that the optical properties of commercial SnO{sub 2} could be improved for PV usage.
Li, X.; Pankow, J.; To, B.; Gessert, T.
Experimental determination of band offsets at the SnS/CdS and SnS/InS{sub x}O{sub y} heterojunctions
The semidirect x-ray photoelectron spectroscopy technique was used to measure the band alignments at the interface of heterostructures based on SnS. The layers were deposited by electrochemical deposition (ECD), chemical bath deposition (CBD), or photochemical deposition (PCD). The following four kinds of heterojunctions were characterized. (1) ECD-SnS/PCD-CdS. (2) CBD-SnS/PCD-CdS. (3) ECD-SnS/ECD-InS{sub x}O{sub y}. (4) CBD-SnS/ECD-InS{sub x}O{sub y}. The valence band offsets {Delta}E{sub V} of those four heterojunctions are determined to be 1.34, 1.59, 0.77, and 0.74{+-}0.3 eV, respectively.
Abdel Haleem, A. M.; Ichimura, M. [Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555 (Japan)
Superheating and supercooling of Ge nanocrystals embedded in SiO2
and liquid Ge/matrix interface free energies govern thematrix, however, alters the interface free energy ofenergy, whereas the relative values of the solid Ge/matrix
Black Ge Based on Crystalline/Amorphous Core/Shell Nanoneedle ...
transmission electron microscope (TEM) image of a Ge NN ... are distinctly observed. (e) The EDS line pro?le reveals that the NN structure is pure Ge.
Low temperature epitaxial growth of Ge on cube- textured Ni
Quasi- single crystal Ge films were grown on [001]<010> textured Ni substrate at a temperature of 350 oC using an insulating buffer layer of CaF2. A direct deposition of Ge on Ni at 350 oC was shown to alloy with Ni. From x- ray pole figure analysis, it was shown that Ge grew epitaxially with the same orientation as CaF2 and the dispersions in the out- of- plane and in- plane directions were found to be 1.7 0.1o and 6 1o, respectively. In the out- of- plane direction, Ge[111]||CaF2[111]||Ni[001]. In addition, the Ge consisted of four equivalent in- plane oriented domains such that two mutually orthogonal directions: Ge 211 and Ge 011 are parallel to mutually orthogonal directions: Ni 110 and Ni 110 , respectively of the Ni(001) surface. This was shown to be originated from the four equivalent in- plane oriented domains of CaF2 created to minimize the mismatch strain between CaF2 and Ni in those directions.
GIARE, C [Rensselaer Polytechnic Institute (RPI); Palazzo, J [Rensselaer Polytechnic Institute (RPI); Goyal, Amit [ORNL; WANG, G [Rensselaer Polytechnic Institute (RPI); LU, T [Rensselaer Polytechnic Institute (RPI)
GeV Emission from Collisional Magnetized Gamma Ray Bursts
Magnetic fields may play a dominant role in gamma-ray bursts, and recent observations by the Fermi satellite indicate that GeV radiation, when detected, arrives delayed by seconds from the onset of the MeV component. Motivated by this, we discuss a magnetically dominated jet model where both magnetic dissipation and nuclear collisions are important. We show that, for parameters typical of the observed bursts, such a model involving a realistic jet structure can reproduce the general features of the MeV and a separate GeV radiation component, including the time delay between the two. The model also predicts a multi-GeV neutrino component.
P. M�sz�ros; M. J. Rees
Ternary Phase Diagram of the Zn-Sn-P System for Fabrication of ...
First, we establish the phase diagram by equilibrium experiments using zinc, tin and their phosphides. At 700 �C, ZnSnP2 is almost stoichiometry,�...
2D and 3D Numerical Modeling of Solidification Benchmark of Sn-3 ...
The benchmark experiment consists in solidifying a rectangular ingot of Sn-3% wt . Pb alloys, by using two lateral heat exchangers which allow extracting heat�...
High Energy Density Anode Materials Based on SiO-SnCo/FeC for ...
Abstract Scope, High energy density anode material SiO-SnCoC is synthesized by mechanical alloying method and tested for lithium battery applications.
Driving Force of EM-Induced Cu Dissolution in Cu-Sn Compound
Both forces would simultaneously result in Cu dissolution fluxes from the Cu-Sn ... Method of Selective Electroplating having Strong Adhesion and Exceptional�...
Neutron capture on 130Sn during r-process freeze-out
We examine the role of neutron capture on 130Sn during r-process freeze-out in the neutrino-driven wind environment of the core-collapse supernova. We find that the global r-process abundance pattern is sensitive to the magnitude of the neutron capture cross section of 130Sn. The changes to the abundance pattern include not only a relative decrease in the abundance of 130Sn and an increase in the abundance of 131Sn, but also a shift in the distribution of material in the rare earth and third peak regions.
J. Beun; J. C. Blackmon; W. R. Hix; G. C. McLaughlin; M. S. Smith; R. Surman
ORNL 2011-G00205/jcn UUT-B ID 201002454
for More Efficient Biomass Conversion Technology Summary It is well known that biomass has primarily two, and together, they uniquely convert biomass to fermentation chemicals more rapidly and efficiently than either enzymes so act synergistically to more efficiently breakdown the biomass carbohydrates, while leaving
Pennycook, Steve
GE Appliances: Proposed Penalty (2010-CE-2113) | Department of Energy
GE Appliances: Proposed Penalty (2010-CE-2113) GE Appliances: Proposed Penalty (2010-CE-2113) GE Appliances: Proposed Penalty (2010-CE-2113) September 8, 2010 DOE alleged in a Notice of Proposed Civil Penalty that General Electric Appliances failed to certify a variety of dehumidifiers as compliant with the applicable energy conservation standards. DOE regulations require a manufacturer (which includes importers) to submit reports certifying that its products have been tested and meet the applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. GE Appliances: Proposed Penalty (2010-CE-2113) More Documents & Publications De'Longhi USA: Proposed Penalty (2010-CE-2114)
GE Lighting Solutions: Proposed Penalty (2013-SE-4901) | Department of
GE Lighting Solutions: Proposed Penalty (2013-SE-4901) GE Lighting Solutions: Proposed Penalty (2013-SE-4901) GE Lighting Solutions: Proposed Penalty (2013-SE-4901) March 5, 2013 DOE alleged in a Notice of Proposed Civil Penalty that General Electric Lighting Solutions manufactured and distributed noncompliant traffic signal modules in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. GE Lighting Solutions: Proposed Penalty (2013-SE-4901) More Documents & Publications Act One: NPCP (2013-CE-49001) Excellence Opto: Proposed Penalty (2013-CE-49002)
Crystal Lake - GE Energy Wind Farm | Open Energy Information
GE Energy Wind Farm GE Energy Wind Farm Jump to: navigation, search Name Crystal Lake - GE Energy Wind Farm Facility Crystal Lake - GE Energy Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner NextEra Energy Resources Developer NextEra Energy Resources Location IA Coordinates 43.194201°, -93.860521° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":43.194201,"lon":-93.860521,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}
Northern Colorado Wind Energy Center (GE) | Open Energy Information
Center (GE) Center (GE) Jump to: navigation, search Name Northern Colorado Wind Energy Center (GE) Facility Northern Colorado Wind Energy Center (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner NextEra Energy Developer NextEra Energy Energy Purchaser Xcel Energy Location Logan County CO Coordinates 40.974539°, -103.025336° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.974539,"lon":-103.025336,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}
ORNL Partners with GE on New Hybrid | ornl.gov
ORNL Partners with GE on New Hybrid ORNL Partners with GE on New Hybrid September 02, 2011 Water Heater About 400 jobs will soon be created at a Louisville General Electric plant at which a new electric water heater will be built. The technology was developed through a collaboration between ORNL and GE. The appliance will meet the new Energy Star water heater program criteria, which require future heaters to be twice as efficient as an electric storage water heater, positioning GE to be the first company to meet the energy-saving standard. According to DOE, using devices that meet these criteria should save American households approximately $780 million. ORNL's Patrick Hughes said the water heater will benefit consumers with its energy efficiency as well as its cost savings. "It will give you as much hot water and have the same recovery times so you
Notrees 1B (GE Energy) Wind Farm | Open Energy Information
B (GE Energy) Wind Farm B (GE Energy) Wind Farm Jump to: navigation, search Name Notrees 1B (GE Energy) Wind Farm Facility Notrees 1B (GE Energy) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner Duke Energy Carolinas LLC Developer Duke Energy Carolinas LLC Location TX Coordinates 31.9685988°, -99.9018131° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":31.9685988,"lon":-99.9018131,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}
GE Nucleus for Residential Energy Use Education, Home Energy...
GE Nucleus for Residential Energy Use Education, Home Energy ManagementControl, Residential Energy Integration Speaker(s): William Watts Date: August 4, 2011 - 12:00pm Location:...
Ge-on-Si laser operating at room temperature
Monolithic lasers on Si are ideal for high-volume and large-scale electronic�photonic integration. Ge is an interesting candidate owing to its pseudodirect gap properties and compatibility with Si complementary metal oxide ...
Probing the Structure of {sup 74}Ge Nucleus with Coupled-channels Analysis of {sup 74}Ge+{sup 74}Ge Fusion Reaction
We study the fusion reaction of the {sup 74}Ge+{sup 74}Ge system in term of the full order coupled-channels formalism. We especially calculated the fusion cross section as well as the fusion barrier distribution of this reaction using transition matrix suggested by recent Coulomb excitation experiment. We compare the results with the one obtained by coupling matrix based on pure vibrational and rotational models. The present coupled-channels calculations for the barrier distributions obtained using experiment coupling matrix is in good agreement with the one obtained with vibrational model, in contrast to the rotational model. This is indicates that {sup 74}Ge nucleus favor a spherical shape than a deformed shape in its ground state. Our results will resolve the debates concerning the structure of this nucleus.
Zamrun F, Muhammad [Deparment of Physics University of Malaya, Kuala Lumpur, 50603 (Malaysia); Jurusan Fisika FMIPA, Universitas Haluoleo, Kendari, Sulawesi Tenggara, 93232 (Indonesia); Kasim, Hasan Abu [Deparment of Physics University of Malaya, Kuala Lumpur, 50603 (Malaysia)
Multimuon production in 280 GeV ?+ iron interactions
Results are presented on dimuon and trimuon final states in 280 GeV ?+ iron interactions. Both dimuon and trimuon data show clear evidence for open charm production and suggest strongly that the dominant production process is photon?gluon fusion. Similar amounts of elastic and inelastic (shower energy ?5 GeV) J/? production are measured in the trimuon sample. Elastic J/? production is consistent with photon?gluon fusion plus naive assumptions. Inelastic J/? production is inconsistent with this simple model
The European Muon Collaboration
Probing the Failure Mechanism of SnO2 Nanowires for Sodium-ion Batteries
Non-lithium metals such as sodium have attracted wide attention as a potential charge carrying ion for rechargeable batteries, performing the same role as lithium in lithium- ion batteries. As sodium and lithium have the same +1 charge, it is assumed that what has been learnt about the operation of lithium ion batteries can be transferred directly to sodium batteries. Using in-situ TEM, in combination with DFT calculations, we probed the structural and chemical evolution of SnO2 nanowire anodes in Na-ion batteries and compared them quantitatively with results from Li-ion batteries [Science 330 (2010) 1515]. Upon Na insertion into SnO2, a displacement reaction occurs, leading to the formation of amorphous NaxSn nanoparticles covered by crystalline Na2O shell. With further Na insertion, the NaxSn core crystallized into Na15Sn4 (x=3.75). Upon extraction of Na (desodiation), the NaxSn core transforms to Sn nanoparticles. Associated with a volume shrinkage, nanopores appear and metallic Sn particles are confined in hollow shells of Na2O, mimicking a peapod structure. These pores greatly increase electrical impedance, therefore naturally accounting for the poor cyclability of SnO2. DFT calculations indicate that Na+ diffuses 30 times slower than Li+ in SnO2, in agreement with in-situ TEM measurement. Insertion of Na can chemo-mechanically soften the reaction product to greater extent than in lithiation. Therefore, in contrast to the lithiation of SnO2, no dislocation plasticity was seen ahead of the sodiation front. This direct comparison of the results from Na and Li highlights the critical role of ionic size and electronic structure of different ionic species on the charge/discharge rate and failure mechanisms in these batteries.
Gu, Meng; Kushima, Akihiro; Shao, Yuyan; Zhang, Jiguang; Liu, Jun; Browning, Nigel D.; Li, Ju; Wang, Chong M.
Thermally oxidized formation of new Ge dots over as-grown Ge dots in the Si capping layer
A Si-capped Ge quantum dot sample was self-assembly grown via Stranski-Krastanov mode in a molecular beam epitaxy system with the Si capping layer deposited at 300 deg. C. After annealing the sample in an oxygen atmosphere at 1000 deg. C, a structure, namely two layers of quantum dots, was formed with the newly formed Ge-rich quantum dots embedded in the oxidized matrix with the position accurately located upon the as-grown quantum dots. It has been found that the formation of such nanostructures strongly depends upon the growth temperature and oxygen atmosphere. A growth mechanism was proposed to explain the formation of the nanostructure based on the Ge diffusion from the as-grown quantum dots, Ge segregation from the growing oxide, and subsequent migration/agglomeration.
Nie Tianxiao [State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433 (China); Materials Engineering, University of Queensland, Brisbane, Queensland QLD 4072 (Australia); Lin Jinhui; Shao Yuanmin; Wu Yueqin; Yang Xinju; Fan Yongliang; Jiang Zuimin [State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433 (China); Chen Zhigang [Materials Engineering, University of Queensland, Brisbane, Queensland QLD 4072 (Australia); Zou Jin [Materials Engineering, University of Queensland, Brisbane, Queensland QLD 4072 (Australia); Centre for Microscopy and Microanalysis, University of Queensland, Brisbane, Queensland QLD 4072 (Australia)
Fabrication and thermoelectric properties of fine-grained TiNiSn compounds
Nearly single-phased TiNiSn half-Heusler compound thermoelectric materials were synthesized by combining mechanical alloying (MA) and spark plasma sintering (SPS) in order to reduce its thermal conductivity by refining the grain sizes. Although TiNiSn compound powders were not synthesized directly via MA, dense bulk samples of TiNiSn compound were obtained by the subsequent SPS treatment. It was found that an excessive Ti addition relative to the TiNiSn stoichiometry is effective in increasing the phase purity of TiNiSn half-Heusler phase in the bulk samples, by compensating for the Ti loss caused by the oxidation of Ti powders and MA processing. The maximum power factor value obtained in the Ti-compensated sample is 1720 muW m{sup -1} K{sup -2} at 685 K. A relatively high ZT value of 0.32 is achieved at 785 K for the present undoped TiNiSn compound polycrystals. - Graphical abstract: Nearly single-phased TiNiSn-based half-Heusler compound polycrystalline materials with fine grains were fabricated by combining mechanical alloying (MA) and spark plasma sintering (SPS). A high ZT value for undoped TiNiSn was obtained because of the reduced thermal conductivity.
Zou Minmin [State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Li Jingfeng, E-mail: firstname.lastname@example.com [State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Du Bing; Liu Dawei [State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Kita, Takuji [Advanced Material Engineering Division, Vehicle Engineering Group, Higashifuji Technical Center, Toyota Motor Corporation, 1200, Mishuku, Susono, Shizuoka 410-1193 (Japan)
Thermal and electrical stabilities of solid nitrogen (SN2) cooled YBCO coated conductors for HTS magnet applications
Recently, a cooling system using a solid cryogen such as solid nitrogen (SN2), was introduced for high temperature superconducting (HTS) magnet applications. In order to apply the SN2 cooling system successfully to HTS ...
Song, J. B.
TEM Study on the Evolution of Ge Nanocrystals in Si Oxide Matrix as a Function of Ge Concentration and the Si Reduction Process
Growth and evolution of germanium (Ge) nanocrystals embedded into a silicon oxide (SiO?) system have been studied based on the Ge content of co-sputtered Ge-SiO? films using transmission electron microscopy (TEM) and X-ray ...
Chew, Han Guan
154 Optical Constant of Zinc Blend SnS and Cubic In2S3(Al) Thin ...
Abstract Scope, SnS and In2S3 thin film have been deposited by low cost chemical ... Optical properties of this hetero-junction SnS/In2S3(Al)/SnO2:F/glass have�...
Cedar Creek Wind Farm I (GE) | Open Energy Information
GE) GE) Jump to: navigation, search Name Cedar Creek Wind Farm I (GE) Facility Cedar Creek Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner Babcock & Brown/BP America Developer Babcock & Brown/BP America Energy Purchaser Xcel Energy Location Weld County east of Grover CO Coordinates 40.873578°, -104.07825° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.873578,"lon":-104.07825,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}
Greenhouse Gas Services AES GE EFS | Open Energy Information
Greenhouse Gas Services AES GE EFS Greenhouse Gas Services AES GE EFS Jump to: navigation, search Name Greenhouse Gas Services (AES/GE EFS) Place Arlington, Virginia Zip 22203-4168 Product Develop and invest in a range of projects that reduce greenhouse gas emissions that produce verified GHG credits. Coordinates 43.337585°, -89.379449° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":43.337585,"lon":-89.379449,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}
Top of the World (GE) | Open Energy Information
Top of the World (GE) Top of the World (GE) Facility Top of the World (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner Duke Energy Carolinas LLC Developer Duke Energy Carolinas LLC Energy Purchaser PacifiCorp Location 4 miles northeast of Glenrock WY Coordinates 42.914132°, -105.691223° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":42.914132,"lon":-105.691223,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}
NETL: News Release - GE Sets Benchmarks for Fuel Cell Performance
August 8, 2005 August 8, 2005 GE Sets Benchmarks for Fuel Cell Performance Achievements Move Efficient, Clean SOFC Technology Closer to Mainstream Energy Markets TORRANCE, CA - In the race to speed solid oxide fuel cell (SOFC) technology out of niche markets and into widespread commercial use, GE Hybrid Power Generation Systems has kicked fuel cell performance into high gear. Recent advancements have dramatically improved baseline cell performance and accelerate GE's prospects for achieving the system efficiency and cost objectives of DOE's Solid State Energy Alliance (SECA) program. Packing more power into smaller volumes is one of the breakthroughs needed to reduce the cost and expand the use of efficient, environmentally friendly fuel cells. But increasing power density isn't the only goal; as power density increases, fuel cells must continue to efficiently and reliably convert fuel to electric power.
Spin Structure with JLab 6 and 12 GeV
Highlights of JLab 6 GeV results on spin structure study and plan for 12 GeV program. Spin structure study is full of surprises and puzzles. A decade of experiments from JLab yield these exciting results: (1) valence spin structure; (2) precision measurements of g{sub 2}/d{sub 2} - high-twist; (3) spin sum rules and polarizabilities; and (4) first neutron transversity. There is a bright future as the 12 GeV Upgrade will greatly enhance our capability: (1) Precision determination of the valence quark spin structure flavor separation; (2) Precision measurements of g{sub 2}/d{sub 2}; and (3) Precision extraction of transversity/tensor charge.
Jian-Ping Chen
Jefferson Lab 12 GeV CEBAF Upgrade
The existing continuous electron beam accelerator facility (CEBAF) at Thomas Jefferson National Accelerator Facility (TJNAF) is a 5-pass, recirculating cw electron Linac operating at ~6 GeV and is devoted to basic research in nuclear physics. The 12 GeV CEBAF Upgrade is a $310 M project, sponsored by the Department of Energy (DOE) Office of Nuclear Physics, that will expand its research capabilities substantially by doubling the maximum energy and adding major new experimental apparatus. The project received construction approval in September 2008 and has started the major procurement process. The cryogenic aspects of the 12 GeV CEBAF Upgrade includes: doubling the accelerating voltages of the Linacs by adding ten new high-performance, superconducting radiofrequency (SRF) cryomodules (CMs) to the existing 42 1/4 cryomodules; doubling of the 2 K cryogenics plant; and the addition of eight superconducting magnets.
Claus Rode
Reducing 68Ge Background in Dark Matter Experiments
Experimental searches for dark matter include experiments with sub-0.5 keV-energy threshold high purity germanium detectors. Experimental efforts, in partnership with the CoGeNT Collaboration operating at the Soudan Underground Laboratory, are focusing on energy threshold reduction via noise abatement, reduction of backgrounds from cosmic ray generated isotopes, and ubiquitous environmental radioactive sources. The most significant cosmic ray produced radionuclide is 68Ge. This paper evaluates reducing this background by freshly mining and processing germanium ore. The most probable outcome is a reduction of the background by a factor of two, and at most a factor of four. A very cost effective alternative is to obtain processed Ge as soon as possible and store it underground for 18 months.
Kouzes, Richard T.; Orrell, John L.
Slow Temperature Equilibration Behind the Shock Front of SN 1006
We report on the observation of OVII Doppler line broadening in a compact knot at the edge of SN 1006 detected with the Reflective Grating Spectrometer on board XMM-Newton. The observed line width of sigma = 3.4+/-0.5 eV at a line energy of 574 eV indicates an oxygen temperature of kT = 528+/-150 keV. Combined with the observed electron temperature of 1.5 keV the observed broadening is direct evidence for temperature non-equilibration in high Mach number shocks, and slow subsequent equilibration. The OVII line emission allows an accurate determination of the ionization state of the plasma, which is characterized by a relatively high forbidden line contribution, indicating log(n_e t) ~ 9.2.
Vink, Jeroen C; Gu, M F; Rasmussen, A; Kaastra, J S; Vink, Jacco; Gu, Ming Feng; Rasmussen, Andrew; Kaastra, Jelle S.
Jacco Vink; J. Martin Laming; Ming Feng Gu; Andrew Rasmussen; Jelle S. Kaastra
Alternative Mechanical Structure for LARP Nb3Sn Quadrupoles
An alternative structure for the 120 mm Nb{sub 3}Sn quadrupole magnet presently under development for use in the upgrade for LHC at CERN is presented. The goals of this structure are to build on the existing technology developed in LARP with the LQ and HQ series magnets and to further optimize the features required for operation in the accelerator. These features include mechanical alignment needed for field quality and provisions for cold mass cooling with 1.9 K helium in a helium pressure vessel. The structure will also optimize coil azimuthal and axial pre-load for high gradient operation, and will incorporate features intended to improve manufacturability, thereby improving reliability and reducing cost.
Anerella, M.; Cozzolino, J.; Ambrosio, G.; Caspi, S.; Felice, H.; Kovach, P.; Lamm, M.; Sabbi, G.; Schmalzle, J.; Wanderer, P.
Band-Structure, Optical Properties, and Defect Physics of the Photovoltaic Semiconductor SnS
SnS is a potential earth-abundant photovoltaic (PV) material. Employing both theory and experiment to assess the PV relevant properties of SnS, we clarify on whether SnS has an indirect or direct band gap and what is the minority carrier effective mass as a function of the film orientation. SnS has a 1.07 eV indirect band gap with an effective absorption onset located 0.4 eV higher. The effective mass of minority carrier ranges from 0.5 m{sub 0} perpendicular to the van der Waals layers to 0.2 m{sub 0} into the van der Waals layers. The positive characteristics of SnS feature a desirable p-type carrier concentration due to the easy formation of acceptor-like intrinsic Sn vacancy defects. Potentially detrimental deep levels due to SnS antisite or S vacancy defects can be suppressed by suitable adjustment of the growth condition towards S-rich.
Vidal, J.; Lany, S.; d'Avezac, M.; Zunger, A.; Zakutayev, A.; Francis, J.; Tate, J.
Synthesis and Structure Determination of Ferromagnetic Semiconductors LaAMnSnO6 (A = Sr Ba)
LaAMnSnO{sub 6} (A = Sr, Ba) have been synthesized by high temperature solid-state reactions under dynamic 1% H{sub 2}/Ar flow. Rietveld refinements on room temperature powder X-ray diffraction data indicate that LaSrMnSnO{sub 6} crystallizes in the GdFeO{sub 3}-structure, with space group Pnma and, combined with transmission electron microscopy, LaBaMnSnO{sub 6} in Imma. Both space groups are common in disordered double-perovskites. The Mn{sup 3+} and Sn{sup 4+} ions whose valence states were confirmed by X-ray absorption spectroscopy, are completely disordered over the B-sites and the BO{sub 6} octahedra are slightly distorted. LaAMnSnO{sub 6} are ferromagnetic semiconductors with a T{sub C} = 83 K for the Sr- and 66 K for the Ba-compound. The title compounds, together with the previously reported LaCaMnSnO{sub 6} provide an interesting example of progression from Pnma to Imma as the tolerance factor increases. An analysis of the relationship between space group and tolerance factor for the series LaAMnMO{sub 6} (A = Ca, Sr, Ba; M = Sn, Ru) provides a better understanding of the symmetry determination for double perovskites.
T Yang; T Perkisas; J Hadermann; M Croft; A Ignatov; M Greenblatt
Comparison Between Research-Grade and Commercially Available SnO2 for Thin-Film CdTe Solar Cells: Preprint
Compared to commercial SnO2 (with similar film thickness and sheet resistance), research-grade SnO2 has higher optical transmittance and higher electron mobility. Based on our study, changing the glass substrate and improving the SnO2 quality could improve the optical properties of commercial SnO2.
Cedar Creek Wind Farm II (GE) | Open Energy Information
Cedar Creek Wind Farm II (GE) Cedar Creek Wind Farm II (GE) Jump to: navigation, search Name Cedar Creek Wind Farm II (GE) Facility Cedar Creek II (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner BP Wind Energy Developer BP Wind Energy Energy Purchaser Xcel Energy Location Weld County CO Coordinates 40.868652°, -104.092398° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.868652,"lon":-104.092398,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}
7-GeV Advanced Photon Source Conceptual Design Report
During the past decade, synchrotron radiation emitted by circulating electron beams has come into wide use as a powerful, versatile source of x-rays for probing the structure of matter and for studying various physical processes. Several synchrotron radiation facilities with different designs and characteristics are now in regular operation throughout the world, with recent additions in this country being the 0.8-GeV and 2.5-GeV rings of NSLS at Brookhaven National Laboratory. However, none of the operating facilities has been designed to use a low-emittance, high-energy stored beam, together with modern undulator devices, to produce a large number of hard x-ray beams of extremely high brilliance. This document is a proposal to the Department of Energy to construct and operate high-energy synchrotron radiation facility at Argonne National Laboratory. We have now chosen to set the design energy of this facility at 7.0 GeV, with the capability to operate at up to 7.5 GeV.
Not Available
Demand Response Performance of GE Hybrid Heat Pump Water Heater
This report describes a project to evaluate and document the DR performance of HPWH as compared to ERWH for two primary types of DR events: peak curtailments and balancing reserves. The experiments were conducted with GE second-generation �Brillion�-enabled GeoSpring hybrid water heaters in the PNNL Lab Homes, with one GE GeoSpring water heater operating in �Standard� electric resistance mode to represent the baseline and one GE GeoSpring water heater operating in �Heat Pump� mode to provide the comparison to heat pump-only demand response. It is expected that �Hybrid� DR performance, which would engage both the heat pump and electric elements, could be interpolated from these two experimental extremes. Signals were sent simultaneously to the two water heaters in the side-by-side PNNL Lab Homes under highly controlled, simulated occupancy conditions. This report presents the results of the evaluation, which documents the demand-response capability of the GE GeoSpring HPWH for peak load reduction and regulation services. The sections describe the experimental protocol and test apparatus used to collect data, present the baselining procedure, discuss the results of the simulated DR events for the HPWH and ERWH, and synthesize key conclusions based on the collected data.
Widder, Sarah H.; Parker, Graham B.; Petersen, Joseph M.; Baechler, Michael C.
1120 (1962). pressure data for SnS. Vapor C. Sirayama, Y.Molecule Geo GeS GeSe GeTe Sns SnSe SnTe v"(cm ) a T(�C) N lobtained the GeS, GeSe, SnS, and SnSe samples from Research
White, M.G.
Recovery Act Helps GE in-source Manufacturing | Department of Energy
Recovery Act Helps GE in-source Manufacturing Recovery Act Helps GE in-source Manufacturing Recovery Act Helps GE in-source Manufacturing September 30, 2010 - 2:21pm Addthis The Geospring Hybrid Water Heater will be produced at GE's Appliance Park in Louisville. | Photo courtesy of GE The Geospring Hybrid Water Heater will be produced at GE's Appliance Park in Louisville. | Photo courtesy of GE Lindsay Gsell GE has a long history in Louisville, Ky. The company's appliance and lighting facility in Louisville has been manufacturing appliances for more than 50 years. Like many facilities, it has seen its share of ups-and-downs. Now, after a tough couple of years, the "Appliance Park" facility is making a "manufacturing" comeback -- with the help of the Recovery Act. The plant retooling project, partially funded through a 48C Advanced Energy
TEE-0074 - In the Matter of GE Appliances & Lighting | Department of Energy
74 - In the Matter of GE Appliances & Lighting 74 - In the Matter of GE Appliances & Lighting TEE-0074 - In the Matter of GE Appliances & Lighting This Decision and Order considers an Application for Exception filed by GE Appliances & Lighting (GE) seeking exception relief from the provision of 10 C.F.R. Part 430, Energy Conservation Program for Consumer Products: Energy Conservation Standards for Refrigerators, Refrigerator-Freezers and Freezers (Refrigerator Efficiency Standards). In its exception request, GE asserts that the firm would suffer a gross inequity if required to adhere to the Refrigerator Efficiency Standards codified at 10 C.F.R. § 430.32. If GE's Application for Exception were granted, GE would receive exception relief from the energy efficiency standard applicable to a new
Commercialization potential of compositionally graded Ge - Si??x?Gex? - Si substrates for solar applications
This project considers the potential of Ge - Si??x?Gex? - Si substrates for solar applications. The use of compositionally graded substrates to achieve heterointegration across different materials platforms such as Si, Ge ...
Goh, Johnathan Jian Ming
Large inherent optical gain from the direct gap transition of Ge thin films
The recent demonstration of Ge-on-Si diode lasers renews the interest in the unique carrier dynamics of Ge involving both direct (?) and indirect (L) valleys. Here, we report a large inherent direct gap optical gain ...
Wang, Xiaoxin
EA-0389: Proposed 7-GeV Advanced Photon Source, Argonne, Illinois
This EA evaluates the environmental impacts of a proposal for construction and operation of a 6- to 7-GeV synchrotron radiation source known as the 7-GeV Advanced Photon Source at�DOE's Argonne...
Epitaxial Ge/Il-V Heterostructures : MOCVD growth, characterization, and applications
Epitaxial Ge thin films are being investigated for many important roles in next generation microelectronics. Metal-oxide-semiconductor field effect transistors (MOSFETs) utilizing Ge channels have demonstrated dramatic ...
Bai, Yu, Ph.D. Massachusetts Institute of Technology
FF4, SiGe/Si Selective Etch Structures for Nanowire Release and ...
1 To attain Ge-rich SiGe nanowire segment at temperatures above 400�C, which is more compatible with SiNW growth conditions, disilane (1% in�...
THE MAGNET LATTICE OF THE LBL 1-2 GeV SYNCHROTRON RADIATION SOURCE
the Chasman- Green TBA Lattices," LBL-21279, to be published19, 1987 THE MAGNET LATTICE OF THE LBL 1-2 GeV SYNCHROTRONLBL- 22193 THE MAGNET LATTICE OF THE LBL 1-2 GeV SYNCHROTRON
Jackson, A.
GE to DOE General Counsel; Re:Request for Comment on Large Capacity Clothes Washers
GE urges the department engage in rulmaking to amend the clothes washer test procedure to reflect efficiency standards of large-capacity residential clothes washer machines. GE also urges the DOE...
The BErkeley Lab Laser Accelerator (BELLA): A 10 GeV Laser Plasma Accelerator
The BErkeley Lab Laser Accelerator (BELLA):A 10 GeV Laser Plasma Accelerator W.P. Leemans ' , R.of the design of a 10 GeV laser plasma accelerator (LPA)
Leemans, W.P.
Effects of Cu-Bearing Flux on Sn-3.5Ag Soldering with Electroless Ni ...
The content of the Cu compound in a flux varies from 0 wt. ... Electromigration Behavior of Sn-In Lead-Free Solder Alloy Under High Current Stress ... Phase-
Test Results of HD1b, an upgraded 16 Tesla Nb3Sn Dipole Magnet
of HD1b, an Upgraded 16 Tesla Nb 3 Sn Dipole Magnet A. F.a peak bore-field of 16 Tesla, using two, flat-racetrack,
Neutron single particle structure in 131Sn and the r-process
Recent calculations suggest that, at late times in the r-process, the rate of neutron capture by {sup 130}Sn has a significant impact on nucleosynthesis. Direct capture into low-lying bound states is likely the dominant reaction in the r-process near the N=82 closed shell, so reaction rates are strongly impacted by the properties of neutron single particle states in this region. In order to investigate these properties, we have acquired (d,p) reaction data in the A{approx}132 region in inverse kinematics using {approx}630 MeV beams (4.85 MeV/u for {sup 130}Sn) and CD{sub 2} targets. An array of Si strip detectors, including SIDAR and an early implementation of the new Oak Ridge Rutgers University Barrel Array (ORRUBA), was used to detect reaction products. Preliminary results for the {sup 130}Sn(d,p){sup 131}Sn experiment are reported.
Kozub, R. L. [Tennessee Technological University; Bardayan, Daniel W [ORNL; Adekola, Aderemi S [ORNL; Blackmon, Jeff C [ORNL; Chae, K. Y. [University of Tennessee; Chipps, K. [Colorado School of Mines, Golden; Cizewski, J. A. [Rutgers University; Erikson, Luke [Colorado School of Mines, Golden; Hatarik, Robert [Rutgers University; Jones, K. L. [University of Tennessee; Krolas, W. [University of Warsaw; Liang, J Felix [ORNL; Ma, Zhanwen [ORNL; Matei, Catalin [Oak Ridge Associated Universities (ORAU); Moazen, Brian [University of Tennessee; Nesaraja, Caroline D [ORNL; Pain, Steven D [ORNL; Shapira, Dan [ORNL; ShrinerJr., J. F. [Tennessee Technological University; Smith, Michael Scott [ORNL; Swan, T. P. [University of Surrey, UK
Establish Electromigration-induced Failure Map for Flip-chip Sn/Cu ...
In this study, we will talk about two kinds of EM-induced failures would occur in a flip-chip Cu/Sn/Cu solder joint under EM test first. Then, we calculated the�...
An Overview of ASC Efforts in Parallel First-Order Sn Methods
National Nuclear Security Administration (NNSA)
First-Order Sn Methods Shawn D. Pautz Simulation Research Technology Department Sandia National Laboratories Five Lab Conference Vienna, Austria June 19-23, 2005 SAND 2005-3154C...
Pb-free Sn-Ag-Cu ternary eutectic solder - Energy ...
A Pb-free solder includes a ternary eutectic composition consisting essentially of about 93.6 weight % Sn-about 4.7 weight % Ag-about 1.7 weight % Cu ...
High performance thin film transistor with cosputtered amorphous Zn-In-Sn-O channel: Combinatorial approach
Thin film transistors with a channel of Zn-In-Sn-O were fabricated via a combinatorial rf sputtering method. It was found that the role of the In atoms is to enhance the mobility and to shift the threshold voltage (V{sub th}) negatively. On the other hand, the Sn fraction is critical for improving the overall trap density including the density-of-states of the bulk channel layer and the interfacial trap density at the ZnInSnO interface. The optimized transistor was obtained at a compositional ratio of Zn:In:Sn=40:20:40, which exhibited an excellent subthreshold gate swing of 0.12 V/decade, V{sub th} of -0.4 V, and high I{sub on/off} ratio of >10{sup 9} as well as a high field-effect mobility of 24.6 cm{sup 2}/V s.
Ryu, Min Ki; Yang, Shinhyuk; Park, Sang-Hee Ko; Hwang, Chi-Sun [Transparent Electronics Team, ETRI, Daejeon 305-700 (Korea, Republic of); Jeong, Jae Kyeong [Department of Materials Science and Engineering, Inha University, 253 Yonghyun-Dong, Nam-Gu, Incheon 402-751 (Korea, Republic of)
Multiple-Stripe Lithiation of Individual SnO2 Nanowires
Abstract Scope, The atomic scale lithiation mechanism of individual SnO2 nanowires in a flooding ... Multinuclear Solid and Liquid State NMR Studies of Battery Materials ... Novel Design of Nanostructured Si Anode on Nanohair Array Polymer�...
Design and Test of a Nb3Sn Subscale Dipole Magnet for Training Studies
Subscale Dipole Magnet for Training Studies Helene Felice,lateral and axial preload on training. On the other hand, ithas been developed to study training in Nb 3 Sn coils under
Caspi, Shlomo
Gas Sensing Properties of Platinum Doped Nanocrystalline SnO2 ...
The sensors dip coated for 5 minutes and sintered at 750oC show the highest sensitivity towards H2, Co and LPG which is ten times higher than undoped SnO2�...
Nonclassical hydrodynamic behavior of Sn plasma irradiated with�a�long duration CO2 laser pulse
with a long duration CO 2 laser pulse Y. Tao � M.S. Tillackwith a long duration CO 2 laser pulse is much shorter thanmass and makes a CO 2 -laser-produced Sn plasma suitable as
Tao, Y.; Tillack, M. S.; Yuseph, S.; Burdt, R.; Najmabadi, F.
Synthesis, structure, and bonding in K12Au21Sn4. A polar intermetallic compound with dense Au20 and open AuSn4 layers
The new phase K{sub 12}Au{sub 21}Sn{sub 4} has been synthesized by direct reaction of the elements at elevated temperatures. Single crystal X-ray diffraction established its orthorhombic structure, space group Pmmn (No. 59), a = 12.162(2); b = 18.058(4); c = 8.657(2) {angstrom}, V = 1901.3(7) {angstrom}{sup 3}, and Z = 2. The structure consists of infinite puckered sheets of vertex-sharing gold tetrahedra (Au{sub 20}) that are tied together by thin layers of alternating four-bonded-Sn and -Au atoms (AuSn{sub 4}). Remarkably, the dense but electron-poorer blocks of Au tetrahedra coexist with more open and saturated Au-Sn layers, which are fragments of a zinc blende type structure that maximize tetrahedral heteroatomic bonding outside of the network of gold tetrahedra. LMTO band structure calculations reveal metallic properties and a pseudogap at 256 valence electrons per formula unit, only three electrons fewer than in the title compound and at a point at which strong Au-Sn bonding is optimized. Additionally, the tight coordination of the Au framework atoms by K plays an important bonding role: each Au tetrahedra has 10 K neighbors and each K atom has 8-12 Au contacts. The appreciably different role of the p element Sn in this structure from that in the triel members in K{sub 3}Au{sub 5}In and Rb{sub 2}Au{sub 3}Tl appears to arise from its higher electron count which leads to better p-bonding (valence electron concentrations = 1.32 versus 1.22).
Li, Bin; Kim, Sung-Jin; Miller, Gordon J.; and Corbett, John D.
Low-energy electric dipole response of Sn isotopes
We study the low-energy dipole (LED) strength distribution along the Sn isotopic chain in both the isoscalar (IS) and the isovector (IV, or E1) electric channels, in order to provide testable predictions and guidance for new experiments with stable targets and radioactive beams. We use the self-consistent Quasi-particle Random-Phase Approximation (QRPA) with finite-range interactions and mainly the Gogny D1S force. We analyze also the performance of a realistic two-body interaction supplemented by a phenomenological three-body contact term. We find that from N=50 and up to the N=82 shell closure (132Sn) the lowest-energy part of the IS-LED spectrum is dominated by a collective transition whose properties vary smoothly with neutron number and which cannot be interpreted as a neutron-skin oscillation. For the neutron-rich species this state contributes to the E1 strength below particle threshold, but much more E1 strength is carried by other, weak but numerous transitions around or above threshold. These are interpreted as incoherent within QRPA. We find that strong structural changes in the spectrum take effect beyond N=82, namely increased LED strength and lower excitation energies. Our results with the Gogny interaction are compatible with existing data. On this basis we predict that a) the summed IS strength below particle threshold shall be of the same order of magnitude for N=50-82, b) the summed E1 strength up to approximately 12 MeV shall be similar for N=50-82 MeV, while c) the summed E1 strength below threshold shall be of the same order of magnitude for N ~ 64 - 82 and much weaker for the lighter, more-symmetric isotopes. We point out a general agreement of our results with other non-relativistic studies, the absence of a collective IS mode in some of those studies, and a possibly radical disagreement with relativistic models.
P. Papakonstantinou; H. Hergert; V. Yu. Ponomarev; R. Roth
Photometric Observations of the Type Ia SN 2002er in UGC 10743
Extensive light and colour curves for the Type Ia supernova SN 2002er are presented as part of the European Supernova Collaboration. We have collected UBVRI photometry from ten different telescopes covering the phases from 7 days before until 619 days after maximum light. Corrections for the different instrumental systems and the non-thermal spectrum of the supernova (S-corrections) have been applied. With the densely sampled light curves we can make detailed comparisons to other well-observed objects. SN 2002er most closely resembles SN 1996X after maximum, but clearly shows a different colour evolution before peak light and a stronger shoulder in V and R bands compared to other well-observed SNe Ia. In particular, the rise time appears to be longer than what is expected from rise-time vs.decline-rate relation. We use several methods to determine the reddening towards SN 2002er based on the colour evolution at near peak and at late phases. The uvoir (bolometric) light curve shows great similarity with SN 1996X, but also indications of a higher luminosity, longer rise time and a more pronounced shoulder 25 days past maximum. The interpretation of the light curves was done with two independent light curve codes. Both find that given the luminosity of SN 2002er the 56Ni mass exceeds 0.6 Msun with prefered values near 0.7 Msun. Uncertainties in the exact distance to SN 2002er are the most serious limitation of this measurement. The light curve modelling also indicates a high level of mixing of the nickel in the explosion of SN 2002er.
G. Pignata; F. Patat; S. Benetti; S. Blinnikov; W. Hillebrandt; R. Kotak; B. Leibundgut; P. A. Mazzali; P. Meikle; Y. Qiu; P. Ruiz-Lapuente; S. Smartt; E. Sorokina; M. Stritzinger; M. Stehle; M. Turatto; T. Marsh; F. Martin-Luis; N. McBride; J. Mendez; L. Morales-Rueda; D. Narbutis; R. Street
Electronic and Optical Properties of Spinel TCOs: Cd2SnO4, Zn2SnO4, and CdIn2O4
Using the band-structure method, we have studied the electronic and optical properties of the transparent conducting oxides SnZn2O4, SnCd2O4, and CdIn2O4. We analyzed the atomic and orbital characters of the band edge states and explained the general trends observed in the fundamental band gap, the optical band gap, the energy difference between the first and the second conduction bands, and the electron effective mass. General rules for designing more efficient transparent conducting oxides are proposed.
Wei, S. H.; Segev, D.
A Comparison of Molten Sn and Bi for Solid Oxide Fuel Cell Anodes
Molten Sn and Bi were examined at 973 and 1073 K for use as anodes in solid oxide fuel cells with yttria-stabilized zirconia (YSZ) electrolytes. Cells were operated under �battery� conditions, with dry He flow in the anode compartment, to characterize the electrochemical oxidation of the metals at the YSZ interface. For both metals, the open-circuit voltages (OCVs) were close to that expected based on their oxidation thermodynamics, ~0.93 V for Sn and ~0.48 V for Bi. With Sn, the cell performance degraded rapidly after the transfer of approximately 0.5-1.5 Ccm{sup 2} of charge due to the formation of a SnO{sub 2} layer at the YSZ interface. At 973 K, the anode impedance at OCV for freshly reduced Sn was approximately 3 {ohm}cm{sup 2} but this increased to well over 250 {ohm}cm{sup 2} after the transfer of of charge. Following the transfer of 8.2 Ccm{sup 2} at 1073 K, the formation of a 10{micro}m thick SnO{sub 2} layer was confirmed by scanning electron microscopy. With Bi, the OCV anode impedance at 973 K was less than 0.25 {ohm}cm{sup 2} and remained constant until essentially all of the Bi had been oxidized to BiO{sub 2}. Some implications of these results for direct carbon fuel cells are discussed.
Jayakumar, A.; Lee, Sang Bok; Horn�s, A.; Vohs, J. M.; Gorte, R. J.
SN 2009js AT THE CROSSROADS BETWEEN NORMAL AND SUBLUMINOUS TYPE IIP SUPERNOVAE: OPTICAL AND MID-INFRARED EVOLUTION
We present a study of SN 2009js in NGC 918. Multi-band Kanata optical photometry covering the first {approx}120 days shows the source to be a Type IIP SN. Reddening is dominated by that due to our Galaxy. One-year-post-explosion photometry with the New Technology Telescope and a Subaru optical spectrum 16 days post-discovery both imply a good match with the well-studied subluminous SN 2005cs. The plateau-phase luminosity of SN 2009js and its plateau duration are more similar to the intermediate luminosity IIP SN 2008in. Thus, SN 2009js shares characteristics with both subluminous and intermediate luminosity supernovae (SNe). Its radioactive tail luminosity lies between SN 2005cs and SN 2008in, whereas its quasi-bolometric luminosity decline from peak to plateau (quantified by a newly defined parameter {Delta}logL, which measures adiabatic cooling following shock breakout) is much smaller than both the others'. We estimate the ejected mass of {sup 56}Ni to be low ({approx}0.007 M{sub Sun }). The SN explosion energy appears to have been small, similar to that of SN 2005cs. SN 2009js is the first subluminous SN IIP to be studied in the mid-infrared. It was serendipitously caught by Spitzer at very early times. In addition, it was detected by WISE 105 days later with a significant 4.6 {mu}m flux excess above the photosphere. The infrared excess luminosity relative to the photosphere is clearly smaller than that of SN 2004dj, which has been extensively studied in the mid-infrared. The excess may be tentatively assigned to heated dust with mass {approx}3 Multiplication-Sign 10{sup -5} M{sub Sun }, or to CO fundamental emission as a precursor to dust formation.
Gandhi, P. [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); Yamanaka, M.; Itoh, R. [Department of Physical Science, Hiroshima University, Kagamiyama 1-3-1, Higashi-Hiroshima 739-8526 (Japan); Tanaka, M. [National Astronomical Observatory, Mitaka, Tokyo (Japan); Nozawa, T.; Maeda, K.; Moriya, T. J. [Kavli Institute for the Physics and Mathematics of the Universe, University of Tokyo, Kashiwa (Japan); Kawabata, K. S. [Hiroshima Astrophysical Science Center, Hiroshima University, Higashi-Hiroshima, Hiroshima 739-8526 (Japan); Saviane, I. [European Southern Observatory, Alonso de Cordova 3107, Santiago 19 (Chile); Hattori, T. [Subaru Telescope, National Astronomical Observatory of Japan, Hilo, HI 96720 (United States); Sasada, M. [Department of Astronomy, Graduate School of Science, Kyoto University, Kyoto 606-8502 (Japan)
Si/SiGe Quantum Devices and Quantum Wells: Electron Spin Coherence
Si/SiGe Quantum Devices and Quantum Wells: Electron Spin Coherence J. L. Truitt1 , K. A. Slinker1 quantum wells are clad by SiGe barriers, and therefore intrinsically strained, leading to growth the current status of ESR experiments in Si/SiGe quantum wells. Many factors can effect transport in silicon
High mobility CMOS transistors on Si/SiGe heterostructure channels
We have demonstrated high mobility CMOS transistors on Si/SiGe heterostructure channels selectively grown on a Si (100) substrate. Electron and hole mobility is enhanced simultaneously on a single Si/SiGe heterostructure channel by confining electrons ... Keywords: Hetero-epitaxy, Hetero-structure, High mobility channel, SiGe CMOS
Jungwoo Oh; Kanghoon Jeon; Se-Hoon Lee; Jeff Huang; P. Y. Hung; Injo Ok; Barry Sassman; Dae-Hong Ko; Paul Kirsch; Raj Jammy
Growth of an {alpha}-Sn film on an InSb(111) A-(2x2) surface
We have investigated the initial growth process of {alpha}-Sn films on the In-terminated InSb(111)A-(2x2) surface using low-energy electron diffraction (LEED) and high-resolution core-level photoelectron spectroscopy. Taking the LEED observation and the Sn coverage-dependent integrated intensities of the In 4d, Sb 4d, and Sn 4d core-level spectra into account, we conclude that the {alpha}-Sn film grows epitaxially by a bilayer mode and that there is no interdiffusion of the substrate atoms as suggested in the literature. Furthermore, the coverage-dependent In 4d and Sn 4d core levels indicate that the In vacancy site of InSb(111)A-(2x2) surface is not the preferable Sn absorption site.
Kondo, Daiyu; Sakamoto, Kazuyuki; Shima, Masahide; Takeyama, Wakaba [Department of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578 (Japan); Nakamura, Kenya; Ono, Kanta; Oshima, Masaharu [Department of Applied Chemistry, Graduate School of Engineering, University of Tokyo, Tokyo 113-0033 (Japan); Kasukabe, Yoshitaka [Department of Electronic Engineering/International Student Center, Tohoku University, Sendai 980-8578 (Japan)
Proposed Penalty (2013-SE-4901) Proposed Penalty (2013-SE-4901) GE Lighting Solutions: Proposed Penalty (2013-SE-4901) March 5, 2013 DOE alleged in a Notice of Proposed Civil Penalty that General Electric Lighting Solutions manufactured and distributed noncompliant traffic signal modules in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. GE Lighting Solutions: Proposed Penalty (2013-SE-4901) More Documents & Publications Watermark: Proposed Penalty (2011-SW-2908) Act One: NPCP (2013-CE-49001)
Capricorn Ridge (GE Energy) Wind Farm | Open Energy Information
Energy) Wind Farm Energy) Wind Farm Jump to: navigation, search Name Capricorn Ridge (GE Energy) Wind Farm Facility Capricorn Ridge (GE Energy) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner NextEra Energy Resources Developer NextEra Energy Resources Location TX Coordinates 31.838061°, -100.923965° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":31.838061,"lon":-100.923965,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}
Multi-GeV Electron Generation Using Texas Petawatt Laser
We present simulation results and experimental setup for multi-GeV electron generation by a laser plasma wake field accelerator (LWFA) driven by the Texas Petawatt (TPW) laser. Simulations show that, in plasma of density n{sub e} = 2-4x10{sup 17} cm{sup -3}, the TPW laser pulse (1.1 PW, 170 fs) can self-guide over 5 Rayleigh ranges, while electrons self-injected into the LWFA can accelerate up to 7 GeV. Optical diagnostic methods employed to observe the laser beam self-guiding, electron trapping and plasma bubble formation and evolution are discussed. Electron beam diagnostics, including optical transition radiation (OTR) and electron gamma ray shower (EGS) generation, are discussed as well.
Wang, X.; Du, D.; Yi, S. A.; Kalmykov, S.; D'avignon, E.; Fazel, N.; Zagdzaj, R.; Reed, S.; Dong, P.; Henderson, W.; Dyer, G.; Bernstein, A.; Gaul, E.; Martinez, M.; Shvets, G.; Ditmire, T.; Downer, M. [Department of Physics, University of Texas at Austin, Austin, TX 78712 (United States)
The 12 GeV Energy Upgrade at Jefferson Laboratory
Two new cryomodules and an extensive upgrade of the bending magnets at Jefferson Lab has been recently completed in preparation for the full energy upgrade in about one year. Jefferson Laboratory has undertaken a major upgrade of its flagship facility, the CW re-circulating CEBAF linac, with the goal of doubling the linac energy to 12 GeV. I will discuss here the main scope and timeline of the upgrade and report on recent accomplishments and the present status. I will then discuss in more detail the core of the upgrade, the new additional C100 cryomodules, their production, tests and recent successful performance. I will then conclude by looking at the future plans of Jefferson Laboratory, from the commissioning and operations of the 12 GeV CEBAF to the design of the MEIC electron ion collider.
Pilat, Fulvia C. [JLAB
InGaAs and Ge MOSFETs with high ? dielectrics
InGaAs and Ge MOSFETs with high @k's are now the leading candidates for technology beyond the 15nm node CMOS. The UHV-Al"2O"3/Ga"2O"3(Gd"2O"3) [GGO]/InGaAs has low electrical leakage current densities, C-V characteristics with low interfacial densities ... Keywords: Atomic layer deposition, Germanium, High ? dielectrics, III-V Compound semiconductor, MOSFETs, Molecular beam epitaxy
W. C. Lee; P. Chang; T. D. Lin; L. K. Chu; H. C. Chiu; J. Kwo; M. Hong
Single-Crystal Intermetallic M-Sn (M ) Fe, Cu, Co, Ni) Nanospheres as Negative Electrodes for Lithium-Ion Batteries
FeSn{sub 2}, Cu{sub 6}Sn{sub 5}, CoSn{sub 3}, and Ni{sub 3}Sn{sub 4} single-crystalline nanospheres with a characteristic uniform particle size of 40 nm have been synthesized via a modified polyol process, aiming at determining and understanding their intrinsic cycling performance as negative electrode materials for lithium-ion batteries. We find that, in this morphologically controlled condition, the reversible capacities follow FeSn{sub 2} > Cu{sub 6}Sn{sub 5} {approx} CoSn{sub 3} > Ni{sub 3}Sn{sub 4}, which is not directly decided by their theoretical capacities or lithium-driven volume changes. FeSn{sub 2} exhibits the best electrochemical activity among these intermetallic nanospheres and an effective solid electrolyte interface, which explains its superior cycling performance. The small particle dimension also improves cycling stability and Li{sup +} diffusion.
Wang, X.; Han, W; Chen, J; Graetz, J
Bond angles for O-H defects in SnO2 from polarization properties of their vibrational modes
Infrared absorption experiments along with a mass-and-spring model and detailed quantum-mechanical calculations using CRYSTAL06 are used to assign structures of trapped H in SnO2. We conclude that the evidence for H trapped at a Sn vacancy is weak at best, and that along with isolated interstitial H and H trapped at an O vacancy, there is evidence that one or two H atoms can be trapped at a Sn interstitial.
FOWLER, W B [Lehigh University, Bethlehem, PA; BEKISLI, F [Lehigh University, Bethlehem, PA; Stavola, M. [Lehigh University, Bethlehem, PA; Boatner, Lynn A [ORNL; Spahr, E. J. [College of William and Mary, Williamsburg, VA; L�pke, G. [Vanderbilt University
Milford Wind Corridor Phase I (GE Energy) | Open Energy Information
form form View source History View New Pages Recent Changes All Special Pages Semantic Search/Querying Get Involved Help Apps Datasets Community Login | Sign Up Search Page Edit with form History Facebook icon Twitter icon » Milford Wind Corridor Phase I (GE Energy) Jump to: navigation, search Name Milford Wind Corridor Phase I (GE Energy) Facility Milford Wind Corridor Phase I (GE Energy) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner First Wind Developer First Wind Energy Purchaser Southern California Public Power Authority Location Milford UT Coordinates 38.52227°, -112.935262° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":38.52227,"lon":-112.935262,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}
NMSSM Higgs Benchmarks Near 125 GeV
The recent LHC indications of a SM-like Higgs boson near 125 GeV are consistent not only with the Standard Model (SM) but also with Supersymmetry (SUSY). However naturalness arguments disfavour the Minimal Supersymmetric Standard Model (MSSM). We consider the Next-to-Minimal Supersymmetric Standard Model (NMSSM) with a SM-like Higgs boson near 125 GeV involving relatively light stops and gluinos below 1 TeV in order to satisfy naturalness requirements. We are careful to ensure that the chosen values of couplings do not become non perturbative below the grand unification (GUT) scale, although we also examine how these limits may be extended by the addition of extra matter to the NMSSM at the two-loop level. We then propose four sets of benchmark points corresponding to the SM-like Higgs boson being the lightest or the second lightest Higgs state in the NMSSM or the NMSSM-with-extra-matter. With the aid of these benchmark points we discuss how the NMSSM Higgs boson near 125 GeV may be distinguished from the SM Higgs boson in future LHC searches.
S. F. King; M. Muhlleitner; R. Nevzorov
Gamma-Ray Bursts Above 1 GeV
One of the principal results obtained by the Compton Gamma Ray Observatory relating to the study of gamma-ray bursts was the detection by the EGRET instrument of energetic ($>$100 MeV) photons from a handful of bright bursts. The most extreme of these was the single 18 GeV photon from the GRB940217 source. Given EGRET's sensitivity and limited field of view, the detection rate implies that such high energy emission may be ubiquitous in bursts. Hence expectations that bursts emit out to at least TeV energies are quite realistic, and the associated target-of-opportunity activity of the TeV gamma-ray community is well-founded. This review summarizes the observations and a handful of theoretical models for generating GeV--TeV emission in bursts sources, outlining possible ways that future positive detections could discriminate between different scenarios. The power of observations in the GeV--TeV range to distinguish between spectral structure intrinsic to bursts and that due to the intervening medium between source and observer is also discussed.
Matthew G. Baring
Kinetics of Ge-Se-In Film Growth
The processes of vacuum evaporation and condensation in the Ge-Se-In system were investigated. Thin amorphous films were deposited by modified thermal evaporation from previously synthesized non-crystalline (GeSe{sub y}){sub 1-x}In{sub x} ingots, where x = 0, 5, 10, 15, 20 and y = 4, 5 and 6. The specific evaporation rate was determined by measuring of the mass of evaporator before evaporation and the mass of empty evaporator after evaporation in temperature range of evaporation (500-800) K. The substrate temperature was varied in the range (300-430) K to study the condensation process and specific condensation rate was determined by measuring of the substrate mass before and after condensation. The condensation energy of the (GeSe{sub y}){sub 1-x}In{sub x} layers steady increases at indium addition.The thin films studied by transmission electron microscopy (TEM) and electron microdiffraction (EMD) reveal homogeneous and amorphous structure. The layer composition determined by Auger electron spectroscopy is close to that of the corresponded bulk samples.
Stoilova, A.; Petkov, P.; Nedeva, Y. [Department of Physics, University of Chemical Technology and Metallurgy, 1756 Sofia (Bulgaria); Monchev, B. [Institute of Electrochemistry and Energy Systems, BAS, 1113 Sofia (Bulgaria)
Flexible Zn2SnO4/MnO2 Core/Shell Nanocable-Carbon Microfiber ...
Presentation Title, Flexible Zn2SnO4/MnO2 Core/Shell Nanocable-Carbon Microfiber Hybrid Composites for High-Performance Supercapacitor Electrodes.
The effect of Ru and Sn additions to Pt on the electrocatalysis of methanol oxidation: An in situ XAS investigation
Elements such as Ru and Sn used as ad-atoms or as alloying elements are known to enhance methanol oxidation reaction (MOR). Ru, both as alloying element as well as upd deposited on Pt/C is widely acknowledged for enhancing MOR. Sn on the other hand is more controversial, with evidence indicating enhancements for MOR when present as upd layer and marginally effective when present as an alloying element. In situ XAS is used to investigate some of these inconsistencies in the electrocatalysis of MOR. Results indicate that alloying Sn with Pt (Pt{sub 3}Sn primary phase) causes partial filling of the Pt 5 d-band vacancies and increase in the Pt-Pt bond distances which is directly opposite to a similar situation with Ru. Upd Sn however does not perturb Pt structurally or electronically. Ru and Sn (both as alloying element and as upd ad-layer) are associated with oxygenated species, the nature and strength of the Ru. and Sn - oxygen interactions are potential dependent. Hence alloying with Sn renders Pt surface unfavorable for methanol adsorption in contrast to alloying with Ru. Both Ru and Sn however promote MOR via their ability to nucleate oxygenated species on their surface at lower potentials as compared to pure Pt.
Mukerjee, S.; McBreen, J.
Chemical nature of the passivation layer depending on the oxidizing agent in Gd2O3/GeO2/Ge stacks grown by molecular beam deposition
In Ge-based metal oxide semiconductor technology, the insertion of a passivation layer seems to be crucial in unpinning the Fermi level at the interface and in reducing the amount of interface defects. GeO"2 was obtained by atomic oxygen (AO), molecular ... Keywords: Gadolinium oxide, Germanium, Molecular beam deposition, Passivation layer, Time-of-flight secondary ion mass spectrometry
A. Lamperti; S. Baldovino; A. Molle; M. Fanciulli
Extensive light and colour curves for the Type Ia supernova SN 2002er are presented as part of the European Supernova Collaboration. We have collected UBVRI photometry from ten different telescopes covering the phases from 7 days before until 619 days after maximum light. Corrections for the different instrumental systems and the non-thermal spectrum of the supernova (S-corrections) have been applied. With the densely sampled light curves we can make detailed comparisons to other well-observed objects. SN 2002er most closely resembles SN 1996X after maximum, but clearly shows a different colour evolution before peak light and a stronger shoulder in V and R bands compared to other well-observed SNe Ia. In particular, the rise time appears to be longer than what is expected from rise-time vs.decline-rate relation. We use several methods to determine the reddening towards SN 2002er based on the colour evolution at near peak and at late phases. The uvoir (bolometric) light curve shows great similarity with SN 199...
Pignata, G; Benetti, S; Blinnikov, S; Hillebrandt, W; Kotak, R; Leibundgut, B; Mazzali, P A; Meikle, P; Qiu, Y; Ruiz-Lapuente, P; Smartt, S; Sorokina, E; Stritzinger, M; Stehle, M; Turatto, M; Marsh, T; Martin-Luis, F; McBride, N; M�ndez, J; Morales-Rueda, L; Narbutis, D; Street, R
ANALYSIS OF THE EARLY-TIME OPTICAL SPECTRA OF SN 2011fe IN M101
The nearby Type Ia supernova (SN Ia) SN 2011fe in M101 (cz = 241 km s{sup -1}) provides a unique opportunity to study the early evolution of a 'normal' SN Ia, its compositional structure, and its elusive progenitor system. We present 18 high signal-to-noise spectra of SN 2011fe during its first month beginning 1.2 days post-explosion and with an average cadence of 1.8 days. This gives a clear picture of how various line-forming species are distributed within the outer layers of the ejecta, including that of unburned material (C+O). We follow the evolution of C II absorption features until they diminish near maximum light, showing overlapping regions of burned and unburned material between ejection velocities of 10,000 and 16,000 km s{sup -1}. This supports the notion that incomplete burning, in addition to progenitor scenarios, is a relevant source of spectroscopic diversity among SNe Ia. The observed evolution of the highly Doppler-shifted O I {lambda}7774 absorption features detected within 5 days post-explosion indicates the presence of O I with expansion velocities from 11,500 to 21,000 km s{sup -1}. The fact that some O I is present above C II suggests that SN 2011fe may have had an appreciable amount of unburned oxygen within the outer layers of the ejecta.
Parrent, J. T.; Fesen, R. A. [6127 Wilder Lab, Department of Physics and Astronomy, Dartmouth College, Hanover, NH 03755 (United States); Howell, D. A.; Dilday, B. [Las Cumbres Observatory Global Telescope Network, Goleta, CA 93117 (United States); Friesen, B.; Baron, E. [Homer L. Dodge Department of Physics and Astronomy, University of Oklahoma, 440 W Brooks, Norman, OK 73019 (United States); Thomas, R. C.; Nugent, P. [Physics Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (United States); Milisavljevic, D. [Harvard-Smithsonian Center for Astrophysics, 60 Garden St., Cambridge, MA 02138 (United States); Bianco, F. B.; Bildsten, L. [Department of Physics, University of California, Santa Barbara, Santa Barbara, CA 93117 (United States); Arcavi, I.; Ben-Ami, S.; Gal-Yam, A. [Department of Particle Physics and Astrophysics, The Weizmann Institute of Science, Rehovot 76100 (Israel); Bersier, D. [Astrophysics Research Institute, Liverpool John Moores University, Birkenhead CH41 1LD (United Kingdom); Bloom, J.; Cenko, S. B.; Filippenko, A. V. [Department of Astronomy, University of California, Berkeley, CA 94720 (United States); Cao, Y. [Cahill Center for Astronomy and Astrophysics, California Institute of Technology, 1200 E California Blvd., Pasadena, CA 91125 (United States); Kasliwal, M. M. [Observatories of the Carnegie Institution for Science, 813 Santa Barbara Street, Pasadena, CA 91101 (United States); and others
Chemical Bonding, Interfaces and Defects in Hafnium Oxide/Germanium Oxynitride Gate Stacks on Ge (100)
Correlations among interface properties and chemical bonding characteristics in HfO{sub 2}/GeO{sub x}N{sub y}/Ge MIS stacks were investigated using in-situ remote nitridation of the Ge (100) surface prior to HfO{sub 2} atomic layer deposition (ALD). Ultra thin ({approx}1.1 nm), thermally stable and aqueous etch-resistant GeO{sub x}N{sub y} interfaces layers that exhibited Ge core level photoelectron spectra (PES) similar to stoichiometric Ge{sub 3}N{sub 4} were synthesized. To evaluate GeO{sub x}N{sub y}/Ge interface defects, the density of interface states (D{sub it}) was extracted by the conductance method across the band gap. Forming gas annealed (FGA) samples exhibited substantially lower D{sub it} ({approx} 1 x 10{sup 12} cm{sup -2} eV{sup -1}) than did high vacuum annealed (HVA) and inert gas anneal (IGA) samples ({approx} 1x 10{sup 13} cm{sup -2} eV{sup -1}). Germanium core level photoelectron spectra from similar FGA-treated samples detected out-diffusion of germanium oxide to the HfO{sub 2} film surface and apparent modification of chemical bonding at the GeO{sub x}N{sub y}/Ge interface, which is related to the reduced D{sub it}.
Oshima, Yasuhiro; /Stanford U., Materials Sci. Dept.; Sun, Yun; /SLAC, SSRL; Kuzum, Duygu; /Stanford U.; Sugawara, Takuya; Saraswat, Krishna C.; Pianetta, Piero; /SLAC, SSRL; McIntyre, Paul C.; /Stanford U., Materials Sci. Dept.
Two-phonon 1- state in 112Sn observed in resonant photon scattering
Results of a photon scattering experiment on 112Sn using bremsstrahlung with an endpoint energy of E_0 = 3.8 MeV are reported. A J = 1 state at E_x = 3434(1) keV has been excited. Its decay width into the ground state amounts to Gamma_0 = 151(17) meV, making it a candidate for a [2+ x 3-]1- two-phonon state. The results for 112Sn are compared with quasiparticle-phonon model calculations as well as the systematics of the lowest-lying 1- states established in other even-mass tin isotopes. Contrary to findings in the heavier stable even-mass Sn isotopes, no 2+ states between 2 and 3.5 MeV excitation energy have been detected in the present experiment.
I. Pysmenetska; S. Walter; J. Enders; H. von Garrel; O. Karg; U. Kneissl; C. Kohstall; P. von Neumann-Cosel; H. H. Pitz; V. Yu. Ponomarev; M. Scheck; F. Stedile; S. Volz
Development of a new Pb-free solder: Sn-Ag-Cu
With the ever increasing awareness of the toxicity of Pb, significant pressure has been put on the electronics industry to get the Pb out of solder. This work pertains to the development and characterization of an alloy which is Pb-free, yet retains the proven positive qualities of current Sn-Pb solders while enhancing the shortcomings of Sn-Pb solder. The solder studied is the Sn-4.7Ag-1.7Cu wt% alloy. By utilizing a variety of experimental techniques the alloy was characterized. The alloy has a melting temperature of 217{degrees}C and exhibits eutectic melting behavior. The solder was examined by subjecting to different annealing schedules and examining the microstructural stability. The effect of cooling rate on the microstructure of the solder was also examined. Overall, this solder alloy shows great promise as a viable alternative to Pb-bearing solders and, as such, an application for a patent has been filed.
Miller, C.M.
Measurements of Nb3Sn conductor dimension changes during heat treatment
During the heat treatment of Nb{sub 3}Sn coils the conductor material properties change significantly. These effects together with the changes of the conductor dimensions during heat treatment may introduce large strain in the coils for accelerator magnets. The US LHC Accelerator Research Program (LARP) has initiated a study aiming at understanding the thermal expansion and contraction of Nb3Sn strands, cables and coils during heat treatment. Several measurements on strands and cables were performed in order to have sufficient inputs for finite element simulation of the dimensional changes during heat treatment. In this paper the results of measurements of OST-RRP Nb{sub 3}Sn conductor used in the LARP magnet program are discussed.
Bocian, D.; Ambrosio, G.; Whitson, G.M.; /Fermilab
How is the blazar GeV emission really produced?
We show that the external Compton (EC) model for the production of the GeV emission in blazars makes specific predictions for the spectrum and variability of those blazars characterized by a high Compton dominance (Compton to synchrotron luminosity ratio). These unavoidable features have not been observed, casting doubt on the validity of this popular model. We argue that synchrotron-self Compton (SSC) models including the higher orders of Compton scattering are more promising, and we briefly discuss the implications of our findings for the geometry of the broad line region (BLR).
Markos Georganopoulos; Eric Perlman; Demosthenes Kazanas; Brian Wingert
Chemical equilibrium study at SPS 158A GeV
A detailed study of chemical freeze-out in nucleus-nucleus collisions at beam energy 158A GeV is presented. By analyzing hadronic multiplicities within the statistical hadronization approach, the chemical equilibration of p-p, C-C, Si-Si and Pb-Pb systems is studied as a function of the number of participating nucleons in the system. Additionally, Two Component statistical hadronization model is applied to the data and is found to be able to explain the observed strangeness hadronic phase space under-saturation.
Jaakko Manninen
The Jefferson Lab 12 GeV Upgrade
A major upgrade of the Continuous Electron Beam Accelerator Facility (CEBAF) at the Thomas Jefferson National Accelerator Facility is in progress. Construction began in 2008 and the project should be completed in 2015. The upgrade includes doubling the energy of the electron beam to 12 GeV, the addition of a new fourth experimental hall, and new experimental equipment in three of the experimental halls. A brief overview of this upgrade project is presented along with some highlights of the anticipated experimental program.
R.D. McKeown
8 GeV H- ions: Transport and injection
Fermilab is working on the design of an 8 GeV superconducting RF H{sup -} linac called the Proton Driver. The energy of H{sup -} beam will be an order of magnitude higher than the existing ones. This brings up a number of technical challenges to transport and injection of H{sup -} ions. This paper will focus on the subjects of stripping losses (including stripping by blackbody radiation, field and residual gas) and carbon foil stripping efficiency, along with a brief discussion on other issues such as Stark states lifetime of hydrogen atoms, single and multiple Coulomb scattering, foil heating and stress, radiation activation, collimation and jitter correction, etc.
Chou, W.; Bryant, H.; Drozhdin, A.; Hill, C.; Kostin, M.; Macek, R.; Ostiguy, J.-F.; Rees, G.H.; Tang, Z.; Yoon, P.; /Fermilab /New Mexico U. /Los Alamos /Rutherford
Relaxation of optically stimulated resistance of thin SnO{sub 2} films
The results of investigation of the effect of irradiation with photons from an L5013VC violet light-emitting diode (LED) with the wavelength of 400 nm and power of 76 mW on the resistance of the sensitive layer of SnO{sub 2}-based test structures of gas sensors in air before and after the high-temperature stabilizing annealing are presented. The features in the variation of the SnO{sub 2}-layer resistance in time are established when the LED is switched on and off.
Russkih, D. V., E-mail: firstname.lastname@example.com; Rembeza, S. I. [Voronezh State Technical University (Russian Federation)
Anodic dissolution characteristics and electrochemical migration lifetimes of Sn solder in NaCl and Na2SO4 solutions
In situ water drop tests and anodic polarization tests of pure Sn solder were carried out in deaerated 0.001% NaCl and Na"2SO"4 solutions to determine the correlation between anodic dissolution characteristics and the electrochemical migration lifetime. ... Keywords: Anodic dissolution, Electrochemical migration, Life time, Na2SO4, NaCl, Sn solder
Ja-Young Jung; Shin-Bok Lee; Young-Chang Joo; Ho-Young Lee; Young-Bae Park
Ibn S?n? on analysis: 1. proof search. or: abstract state machines as a tool for history of logic
The 11th century Arabic-Persian logician Ibn S?n? (Avicenna) in Sect. 9.6 of his book Qiy?s gives what appears to be a proof search algorithm for syllogisms. We confirm that it is indeed a proof search algorithm, by extracting all the ... Keywords: Ibn S?n?, abstract state machine, avicenna, proof search, syllogism
Wilfrid Hodges
THE SPECTROSCOPIC CLASSIFICATION AND EXPLOSION PROPERTIES OF SN 2009nz ASSOCIATED WITH GRB 091127 AT z = 0.490
We present spectroscopic observations of GRB 091127 (z = 0.490) at the peak of the putative associated supernova SN 2009nz. Subtracting a late-time spectrum of the host galaxy, we isolate the contribution of SN 2009nz and uncover broad features typical of nearby gamma-ray-burst-supernovae (GRB-SNe). This establishes unambiguously that GRB 091127 was accompanied by a broad-lined Type Ic SN, and links a cosmological long burst with a standard energy release (E{sub {gamma},iso} Almost-Equal-To 1.1 Multiplication-Sign 10{sup 52} erg) to a massive star progenitor. The spectrum of SN 2009nz closely resembles that of SN 2006aj, with SN 2003dh also providing an acceptable match, but has significantly narrower features than SNe 1998bw and 2010bh, indicative of a lower expansion velocity. The photospheric velocity inferred from the Si II {lambda}6355 absorption feature, v{sub ph} Almost-Equal-To 17, 000 km s{sup -1}, is indeed closer to that of SNe 2006aj and 2003dh than to the other GRB-SNe. Combining the measured velocity with the light curve peak brightness and width, we estimate the following nominal (maximal) explosion parameters: M{sub Ni} Almost-Equal-To 0.35 (0.6) M{sub Sun }, E{sub K} Almost-Equal-To 2.3 Multiplication-Sign 10{sup 51} (8.4 Multiplication-Sign 10{sup 51}) erg, and M{sub ej} Almost-Equal-To 1.4 (3.5) M{sub Sun }, similar to those of SN 2006aj. These properties indicate that SN 2009nz follows a trend of lower M{sub Ni} for GRB-SNe with lower E{sub K} and M{sub ej}. Equally important, since GRB 091127 is a typical cosmological burst, the similarity of SN 2009nz to SN 2006aj either casts doubt on the claim that XRF 060218/SN 2006aj was powered by a neutron star or indicates that the nature of the central engine is encoded in the SN properties but not in the prompt emission. Future spectra of GRB-SNe at z {approx}> 0.3 will shed light on the full dispersion of SN properties for standard long GRBs, on the relation between SNe associated with sub-energetic and standard GRBs, and on a potential dispersion in the associated SN types.
Berger, E.; Chornock, R.; Holmes, T. R.; Foley, R. J. [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Cucchiara, A. [Lawrence Berkeley National Laboratory, M.S. 50-F, 1 Cyclotron Road, Berkeley, CA 94720 (United States); Wolf, C.; Podsiadlowski, Ph. [Department of Astrophysics, Denys Wilkinson Building, University of Oxford, Keble Road, Oxford OX1 3RH (United Kingdom); Fox, D. B. [Department of Astronomy and Astrophysics, Pennsylvania State University, 525 Davey Laboratory, University Park, PA 16802 (United States); Roth, K. C. [Gemini Observatory, 670 N. Aohoku Place Hilo, HI 96720 (United States)
Vermont Yankee's benefits and concerns operating with Axially zoned GE9 fuel
Vermont Yankee (VY) is a 368-assembly, D-lattice, boiling water reactor (BWR)/4. The current cycle 16 contains 252 GE9 assemblies with axial zoning of gadolinium and enrichment, 112 GE8 assemblies with axially zoned gadolinium, and 4 Siemens 9 x 9-IX lead qualification assemblies. In this paper, the performance of the GE9-dominated core is evaluated against previous cores containing less sophisticated fuel designs.
Woehlke, R.A. (Yankee Atomic Electric Co., Bolton, MA (United States))
The metamorphosis of Supernova SN2008D/XRF080109: a link between Supernovae and GRBs/Hypernovae
The only supernovae (SNe) to have shown early gamma-ray or X-ray emission thus far are overenergetic, broad-lined Type Ic SNe (Hypernovae - HNe). Recently, SN 2008D shows several novel features: (i) weak XRF, (ii) an early, narrow optical peak, (iii) disappearance of the broad lines typical of SNIc HNe, (iv) development of He lines as in SNeIb. Detailed analysis shows that SN 2008D was not a normal SN: its explosion energy (KE ~ 6*10^{51} erg) and ejected mass (~7 Msun) are intermediate between normal SNeIbc and HNe. We derive that SN 2008D was originally a ~30Msun star. When it collapsed a black hole formed and a weak, mildly relativistic jet was produced, which caused the XRF. SN 2008D is probably among the weakest explosions that produce relativistic jets. Inner engine activity appears to be present whenever massive stars collapse to black holes.
Paolo A. Mazzali; Stefano Valenti; Massimo Della Valle; Guido Chincarini; Daniel N. Sauer; Stefano Benetti; Elena Pian; Tsvi Piran; Valerio D'Elia; Nancy Elias-Rosa; Raffaella Margutti; Francesco Pasotti; L. Angelo Antonelli; Filomena Bufano; Sergio Campana; Enrico Cappellaro; Stefano Covino; Paolo D'Avanzo; Fabrizio Fiore; Dino Fugazza; Roberto Gilmozzi; Deborah Hunter; Kate Maguire; Elisabetta Maiorano; Paola Marziani; Nicola Masetti; Felix Mirabel; Hripsime Navasardyan; Ken'ichi Nomoto; Eliana Palazzi; Andrea Pastorello; Nino Panagia; Leonardo J. Pellizza; Re'em Sari; Stephen Smartt; Gianpiero Tagliaferri; Masaomi Tanaka; Stefan Taubenberger; Nozomu Tominaga; Carrie Trundle; Massimo Turatto
SnO2-gated AlGaN/GaN high electron mobility transistors based oxygen sensors
Hydrothermally grown SnO2 was integrated with AlGaN/GaN high electron mobility transistor (HEMT) sensor as the gate electrode for oxygen detection. The crystalline of the SnO2 was improved after annealing at 400 C. The grain growth kinetics of the SnO2 nanomaterials, together with the O2 gas sensing properties and sensing mechanism of the SnO2 gated HEMT sensors were investigated. Detection of 1% oxygen in nitrogen at 100 C was possible. A low operation temperature and low power consumption oxygen sensor can be achieved by combining the SnO2 films with the AlGaN/GaN HEMT structure
Hung, S.T. [Feng Chia University, Taichung, Taiwan; Chung, Chi-Jung [Feng Chia University, Taichung, Taiwan; Chen, Chin Ching [University of Florida, Gainesville; Lo, C. F. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kravchenko, Ivan I [ORNL
Photovoltaic properties of n-type SnS contact on the unpolished p-type Si surfaces with and without sulfide treatment
The fabrication and detailed electrical properties of heterojunction diodes based on n-type SnS (n-SnS) and p-type Si (p-Si) were reported. The effect of sulfide treatment of p-Si on the power conversion efficiency (PCE) of the n-SnS/unpolished p-Si ... Keywords: Si, SnS, Solar cells, Surface treatment
Chung-Cheng Huang, Yow-Jon Lin, Chia-Jyi Liu, Yao-Wei Yang
Optimization of annealing conditions for controlling composition of (Pb{sub 1-x}Ge{sub x}){sub 1-{delta}}Te{sub 1+{delta}} crystals
One common way of controlling the composition of semiconductor materials is by two- or three-zone annealing. Compared to doping during growth, such anneals ensure more uniform distribution of impurities and better reproducibility of galvanomagnetic and photoelectric properties. For (A{sub 1{minus}x}B{sub x}){sub 1{minus}{delta}}C{sub 1+{delta}} chalcogenide solid solutions, the A/B ratio can be controlled by introducing an additional source of B or A, whereas off-stoichiometry {Delta} can be varied using a source of chalcocren C. The purpose of this work was to optimize the conditions for preparing homogeneous crystals of (Pb{sub 1{minus}}x Ge{sub x}){sub 1{minus}{delta}}Te{sub 1+{delta}} (0Sn{sub 0.07}{sub 1{minus}{delta}} solid solution showed that, under conditions commonly used for annealing IV-VI materials, mass transport to the cold zone is insignificant. This information is, however, insufficient for choosing optimal process parameters since the minimum annealing time remains to be determined. In this work, we calculated the optimal annealing parameters for preparing homogeneous crystals of Pb{sub 1{minus}x}Ge{sub x}Te (O < x <{le}0.05). In calculations we used kinetic equations describing mass transport in the solid and vapor phases and the measured temperature dependence of the diffusion coefficient for germanium in PbTe.
Yahsina, L.V.; Bobruiko, V.B.; Zlomanov, V.P. [Moscow State Univ. (Russian Federation)] [and others
The Jefferson Lab program: From 6 GeV operations to the 12 GeV upgrade
The Thomas Jefferson National Laboratory and the CEBAF accelerator operated for more than a decade, running a comprehensive scientific program that improved our understanding of the strong interaction. The facility is now moving toward an upgrade of the machine, from 6 to 12 GeV; a new experimental hall will be added and the equipment of the three existing halls will be enhanced. In this contribution some selected results from the rich physics program run at JLab, as well as the prospects for the near future, will be presented.
Marco Battaglieri
G Ge Get Get E Get El Get Ele Get Elec Get Elect Get Electr Get ...
G. Ge. Get. Get E. Get El. Get Ele. Get Elec. Get Elect. Get Electr. Get Electri. Get Electrif. Get Electrifi. Get Electrifie. Get Electrified. Get Electrified� Electronic�...
EE3, Molecular Beam Epitaxy of Very Thin Fluoride Films on Ge(111)
RTDs were fabricated on Ge substrates by using the initial fluoride layer grown under the optimized condition. The various fluoride layers grown by the single�...
Application of Alloy 718 in GE Aircraft Engines: Past, Present and ...
Robert E. Schafrik, Douglas D. Ward, Jon R. Groh. GE Aircraft Engines. Materials and Process Engineering Department. Cincinnati. Ohio 452 15. ABSTRACT.
Radiation microscope for SEE testing using GeV ions.
Radiation Effects Microscopy is an extremely useful technique in failure analysis of electronic parts used in radiation environment. It also provides much needed support for development of radiation hard components used in spacecraft and nuclear weapons. As the IC manufacturing technology progresses, more and more overlayers are used; therefore, the sensitive region of the part is getting farther and farther from the surface. The thickness of these overlayers is so large today that the traditional microbeams, which are used for REM are unable to reach the sensitive regions. As a result, higher ion beam energies have to be used (> GeV), which are available only at cyclotrons. Since it is extremely complicated to focus these GeV ion beams, a new method has to be developed to perform REM at cyclotrons. We developed a new technique, Ion Photon Emission Microscopy, where instead of focusing the ion beam we use secondary photons emitted from a fluorescence layer on top of the devices being tested to determine the position of the ion hit. By recording this position information in coincidence with an SEE signal we will be able to indentify radiation sensitive regions of modern electronic parts, which will increase the efficiency of radiation hard circuits.
Doyle, Barney Lee; Knapp, James Arthur; Rossi, Paolo; Hattar, Khalid M.; Vizkelethy, Gyorgy; Brice, David Kenneth; Branson, Janelle V.
12 GeV Upgrade Project - Cryomodule Production
The Thomas Jefferson National Accelerator Facility (Jefferson Lab) is producing ten 100+MV SRF cryomodules (C100) as part of the CEBAF 12 GeV Upgrade Project. Once installed, these cryomodules will become part of an integrated accelerator system upgrade that will result in doubling the energy of the CEBAF machine from 6 to 12 GeV. This paper will present a complete overview of the C100 cryomodule production process. The C100 cryomodule was designed to have the major components procured from private industry and assembled together at Jefferson Lab. In addition to measuring the integrated component performance, the performance of the individual components is verified prior to being released for production and assembly into a cryomodule. Following a comprehensive cold acceptance test of all subsystems, the completed C100 cryomodules are installed and commissioned in the CEBAF machine in preparation of accelerator operations. This overview of the cryomodule production process will include all principal performance measurements, acceptance criterion and up to date status of current activities.
J. Hogan, A. Burrill, G.K. Davis, M.A. Drury, M. Wiseman
PTF 10bzf (SN 2010ah): A BROAD-LINE Ic SUPERNOVA DISCOVERED BY THE PALOMAR TRANSIENT FACTORY
We present the discovery and follow-up observations of a broad-line Type Ic supernova (SN), PTF 10bzf (SN 2010ah), detected by the Palomar Transient Factory (PTF) on 2010 February 23. The SN distance is {approx_equal}218 Mpc, greater than GRB 980425/SN 1998bw and GRB 060218/SN 2006aj, but smaller than the other SNe firmly associated with gamma-ray bursts (GRBs). We conducted a multi-wavelength follow-up campaign with Palomar 48 inch, Palomar 60 inch, Gemini-N, Keck, Wise, Swift, the Allen Telescope Array, Combined Array for Research in Millimeter-wave Astronomy, Westerbork Synthesis Radio Telescope, and Expanded Very Large Array. Here we compare the properties of PTF 10bzf with those of SN 1998bw and other broad-line SNe. The optical luminosity and spectral properties of PTF 10bzf suggest that this SN is intermediate, in kinetic energy and amount of {sup 56}Ni, between non-GRB-associated SNe like 2002ap or 1997ef, and GRB-associated SNe like 1998bw. No X-ray or radio counterpart to PTF 10bzf was detected. X-ray upper limits allow us to exclude the presence of an underlying X-ray afterglow as luminous as that of other SN-associated GRBs such as GRB 030329 or GRB 031203. Early-time radio upper limits do not show evidence for mildly relativistic ejecta. Late-time radio upper limits rule out the presence of an underlying off-axis GRB, with energy and wind density similar to the SN-associated GRB 030329 and GRB 031203. Finally, by performing a search for a GRB in the time window and at the position of PTF 10bzf, we find that no GRB in the interplanetary network catalog could be associated with this SN.
Corsi, A. [LIGO Laboratory, California Institute of Technology, MS 100-36, Pasadena, CA 91125 (United States); Ofek, E. O.; Kulkarni, S. R.; Kasliwal, M. M. [Cahill Center for Astrophysics, California Institute of Technology, Pasadena, CA 91125 (United States); Frail, D. A. [National Radio Astronomy Observatory, P.O. Box 0, Socorro, NM 87801 (United States); Poznanski, D.; Nugent, P. [Computational Cosmology Center, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (United States); Arcavi, I.; Gal-Yam, A.; Green, Y.; Xu, D.; Ben-ami, S. [Department of Particle Physics and Astrophysics, The Weizmann Institute of Science, Rehovot 76100 (Israel); Hurley, K. [Space Sciences Laboratory, University of California Berkeley, 7 Gauss Way, Berkeley, CA 94720 (United States); Mazzali, P. A. [INAF-Osservatorio Astronomico, vicolo dell'Osservatorio 5, I-35122 Padova (Italy); Howell, D. A.; Murray, D. [Las Cumbres Observatory Global Telescope Network, Inc., Santa Barbara, CA 93117 (United States); Sullivan, M. [Department of Physics (Astrophysics), University of Oxford, DWB, Keble Road, Oxford OX1 3RH (United Kingdom); Bloom, J. S.; Cenko, S. B. [Department of Astronomy, 601 Campbell Hall, University of California, Berkeley, CA 94720-3411 (United States); Law, N. M., E-mail: email@example.com [Dunlap Institute for Astronomy and Astrophysics, University of Toronto, 50 St. George Street, Toronto M5S 3H4, Ontario (Canada)
Microwave-assisted hydrothermal synthesis of porous SnO{sub 2} nanotubes and their lithium ion storage properties
Porous SnO{sub 2} nanotubes have been synthesized by a rapid microwave-assisted hydrothermal process followed by annealing in air. The detailed morphological and structural studies indicate that the SnO{sub 2} tubes typically have diameters from 200 to 400 nm, lengths from 0.5 to 1.5 {mu}m and wall thicknesses from 50 to 100 nm. The SnO{sub 2} nanotubes are self-assembled by interconnected nanocrystals with sizes {approx}8 nm resulting in a specific surface area of {approx}54 m{sup 2} g{sup -1}. The pristine SnO{sub 2} nanotubes are used to fabricate lithium half cells to evaluate their lithium ion storage properties. The porous SnO{sub 2} nanotubes are characteristic with high lithium ion storage capacity, that is found to be 1258, 951, 757, 603, 458, and 288 mAh g{sup -1}, at 0.1, 0.2, 0.5, 1, 2, and 4C, respectively. The enhanced electrochemical properties of the SnO{sub 2} nanotubes can be ascribed to their unique geometry and porous structures. - Graphical abstract: Porous SnO{sub 2} nanotubes are synthesized by a fast microwave-assisted hydrothermal process and exhibit high lithium ion storage properties due to their unique geometry and porous characteristics. Highlights: Black-Right-Pointing-Pointer A microwave-assisted hydrothermal method was used to prepare porous SnO{sub 2} nanotubes. Black-Right-Pointing-Pointer The porous SnO{sub 2} nanotubes have abundant mesopores on their tube walls. Black-Right-Pointing-Pointer The porous SnO{sub 2} nanotubes possess high lithium ion storage properties. Black-Right-Pointing-Pointer Our results may promote the development of high-performance anode materials.
Wang, H.E., E-mail: email@example.com [Department of Physics and Materials Science, City University of Hong Kong (Hong Kong); Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong (Hong Kong); Xi, L.J.; Ma, R.G. [Department of Physics and Materials Science, City University of Hong Kong (Hong Kong); Lu, Z.G. [School of Chemistry and Chemical Engineering, Central South University, Changsha 410083 (China); Chung, C.Y. [Department of Physics and Materials Science, City University of Hong Kong (Hong Kong); Bello, I. [Department of Physics and Materials Science, City University of Hong Kong (Hong Kong); Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong (Hong Kong); Zapien, J.A., E-mail: firstname.lastname@example.com [Department of Physics and Materials Science, City University of Hong Kong (Hong Kong); Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong (Hong Kong)
Hotcell Examination of GE11 and GE13 BWR Fuel Exposed to 52 and 65 GWd/MTU at the Limerick 1 and 2 Reactors
BWR fuel components of the GE11 and GE13 (9x9) designs that operated to either 51-53 or 65 GWd/MTU average exposure in the Limerick 1 and Limerick 2 reactors were examined in the GE Vallecitos hotcells. The irradiation of the components and their examination are part of a program to quantify operating margins, to improve fuel-cycle economics by increasing exposure to which BWR fuel can operate, and to evaluate the effects of cladding process and operation in NobleChemTM water chemistry. The post-irradiat...
Microstructure and electrical mechanism of Sn-xAg-Cu PV-ribbon for solar cells
The microstructure, fusion current, and series resistance of photovoltaic (PV) ribbon containing SAC105 and SAC305 alloys are investigated. After reflow, the interfacial microstructures of solder/Cu and solder/Ag were observed and an electrical current ... Keywords: Electrical properties, Photovoltaic ribbon, Sn-Ag-Cu
Kuan-Jen Chen, Fei-Yi Hung, Truan-Sheng Lui, Li-Hui Chen, Dai-Wen Qiu, Ta-Lung Chou
Effects of electromigration on microstructural evolution of eutectic SnPb flip chip solder bumps
The flip chip solder bump was investigated in situ with current stressing in an ambient temperature of 423K. For the in situ investigation of the solder joints, a single flip chip package was examined during whole investigation time. Cross-sectional ... Keywords: Electromigration, Flip chip, Reliability, Sn-37Pb
Dae-Gon Kim; Won-Chul Moon; Seung-Boo Jung
Fueled viking generator S/N 106 acceptance vibration test report
The Viking Generator S/N 106 was vibrated to the Teledyne Isotope Flight Acceptance Schedule (Random Only) with no deviation from normal generator functional output. Radiographic analysis and power tests before and after the vibration test indicated no change in the condition of the generator. The work was conducted in the Alpha Fuels Environmental Test Facility at Mound Laboratory.
Anderson, C.; Brewer, C.O.; Abrahamson, S.G.
SnO2 nanoparticle-based passive capacitive sensor for ethylene detection
A passive capacitor-based ethylene sensor using SnO2 nanoparticles is presented for the detection of ethylene gas. The nanoscale particle size (10 nm to 15 nm) and film thickness (1300 nm) of the sensing dielectric layer in the capacitor model ...
Mangilal Agarwal; Mercyma D. Balachandran; Sudhir Shrestha; Kody Varahramyan
Axial Ge/Si nanowire heterostructure tunnel FETs
The vapor-liquid-solid (VLS) growth of semiconductor nanowires allows doping and composition modulation along their axis and the realization of axial 1 D heterostructures. This provides additional flexibility in energy band-edge engineering along the transport direction which is difficult to attain by planar materials growth and processing techniques. We report here on the design, growth, fabrication, and characterization of asymmetric heterostructure tunnel field-effect transistors (HTFETs) based on 100% compositionally modulated Si/Ge axial NWs for high on-current operation and low ambipolar transport behavior. We discuss the optimization of band-offsets and Schottky barrier heights for high performance HTFETs and issues surrounding their experimental realization. Our HTFET devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a measured current drive exceeding 100 {mu}A/{mu}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios.
Picraux, Sanuel T [Los Alamos National Laboratory; Daych, Shadi A [Los Alamos National Laboratory
Direct Detection of Sub-GeV Dark Matter
Direct detection strategies are proposed for dark matter particles with MeV to GeV mass. In this largely unexplored mass range, dark matter scattering with electrons can cause single-electron ionization signals, which are detectable with current technology. Ultraviolet photons, individual ions, and heat are interesting alternative signals. Focusing on ionization, we calculate the expected dark matter scattering rates and estimate the sensitivity of possible experiments. Backgrounds that may be relevant are discussed. Theoretically interesting models can be probed with existing technologies, and may even be within reach using ongoing direct detection experiments. Significant improvements in sensitivity should be possible with dedicated experiments, opening up a window to new regions in dark matter parameter space.
Essig, Rouven; Mardon, Jeremy; Volansky, Tomer
200-GeV ISA with room temperature magnets
A conceptual design study of 200-GeV proton intersecting storage accclerators with room temperature magnets is presented. The key to this study was thc desire to keep the electric power consumptiom to an acceptable level (40 MW). The design has been optimized by choosing small-gap (4 cm) aluminum coil dipoles operating at about 15 kG. The luminosity of this machine is limited to about 10/sup 32/ cm-/sup -2/ sec/sup -1/ by transverse space-charg e effects. An order of magnitude higher luminositics can be obtained by adding a booster of modest cost. A novel vacuum system using distributed Ti-sublimation pumps results in considerable savings. A cost comparison with a high-luminosity superconducting machine is given. (auth)
Willis, W.J.; Danby, G.T.; Hahn, H.; Halama, H.J.; Maschke, A.W.; Month, M.; Parzen, G.; Polk, I.
Microsoft Word - Poster Abstract_2010_GE Global Reserach.doc
current collector geometry on ohmic resistance current collector geometry on ohmic resistance H. Cao, S. Gaunt, T. Striker and M.J. Alinger* GE Global Research, One Research Circle, Niskayuna, NY 12309 In order to directly measure the cathode current collector ohmic resistance contribution to the total cell resistance, contact resistance measurements are typically made. In addition to starting cell resistance contributions, these tests provide data regarding resistance changes over time for interpretation of performance degradation. However, the geometries of the current collection used during this testing are often not directly representative of operational fuel cells. Thus, an experimental study was initiated to investigate the effect of various interconnect geometries and their influence on Area
Observation of the polarization in reaction ????n at 40 GeV/c
The preliminary results of polarization measurements in reaction ??+p??+n at 40 GeV/c for the 4?momentum transfers up to 1 (GeV/c)2 are presented. Averaged blue of the polarization in the t?range 0
V. D. Apokin; I. A. Avvakumov; N. S. Borisov; B. V. Chuiko; Yu. M. Goncharenko; Yu. M. Kazarinov; B. A. Khachaturov; G. G. G. Macharashvili; V. N. Matafonov; Yu. A. Matulenko; A. P. Meschanin; A. I. Mysnik; A. B. Neganov; S. B. Nurushev; L. B. Parfenov; A. F. Prudkogliad; A. I. Saraykin; E. V. Smirnov; V. L. Solovyanov; L. F. Solovyev; Yu. A. Usov; A. N. Vasilyev
Gamma-ray energies for calibration of Ge(Li) spectrometers
Gamma-ray energies are compared for bent-crystal measurements, Ge(Li) measurements, and other measurements. 150 gamma-ray energies below 3450 keV from 35 isotopes are being calibrated for calibration of Ge(Li) spectrometers. (WHK)
Helmer, R.G.; Greenwood, R.C.; Gehrke, R.J.
Ge integration on Si via rare earth oxide buffers: From MBE to CVD (Invited Paper)
Single crystalline rare earth oxide heterostructures are flexible buffer systems to achieve the monolithic integration of Ge thin film structures on Si. The development of engineered oxide systems suitable for mass-production compatible CVD processes ... Keywords: Engineered Si wafers, Ge integration, Heteroepitaxy, Rare earth oxides, X-ray diffraction
T. Schroeder; A. Giussani; H. -J. Muessig; G. Weidner; I. Costina; Ch. Wenger; M. Lukosius; P. Storck; P. Zaumseil
The spinal muscular atrophy disease gene product, SMN: a link between snRNP biogenesis and the Cajal (coiled) body
Abstract. The spliceosomal snRNAs U1, U2, U4, and U5 are synthesized in the nucleus, exported to the cytoplasm to assemble with Sm proteins, and reimported to the nucleus as ribonucleoprotein particles. Recently, two novel proteins involved in biogenesis of small nuclear ribonucleoproteins (snRNPs) were identified, the Spinal muscular atrophy disease gene product (SMN) and its associated protein SIP1. It was previously reported that in HeLa cells, SMN and SIP1 form discrete foci located next to Cajal (coiled) bodies, the so-called �gemini of coiled bodies � or �gems. � An intriguing feature of gems is that they do not appear to contain sn-RNPs. Here we show that gems are present in a variable but small proportion of rapidly proliferating cells in culture. In the vast majority of cultured cells and in all primary neurons analyzed, SMN and SIP1 colocalize precisely with snRNPs in the Cajal body. The presence of SMN and SIP1 in Cajal bodies is confirmed by immunoelectron microscopy and by microinjection of antibodies that interfere with the integrity of the structure. The association of SMN with snRNPs and coilin persists during cell division, but at the end of mitosis there is a lag period between assembly of new Cajal bodies in the nucleus and detection of SMN in these structures, suggesting that SMN is targeted to preformed Cajal bodies. Finally, treatment of cells with leptomycin B (a drug that blocks export of U snRNAs to the cytoplasm and consequently import of new snRNPs into the nucleus) is shown to deplete snRNPs (but not SMN or SIP1) from the Cajal body. This suggests that snRNPs flow through the Cajal body during their biogenesis pathway.
Teresa Carvalho; F�tima Almeida; Re Calapez; Miguel Lafarga; Maria T. Berciano; Maria Carmo-fonseca
Activation and thermal stability of ultra-shallow B{sup +}-implants in Ge
The activation and thermal stability of ultra-shallow B{sup +} implants in crystalline (c-Ge) and preamorphized Ge (PA-Ge) following rapid thermal annealing was investigated using micro Hall effect and ion beam analysis techniques. The residual implanted dose of ultra-shallow B{sup +} implants in Ge was characterized using elastic recoil detection and was determined to correlate well with simulations with a dose loss of 23.2%, 21.4%, and 17.6% due to ion backscattering for 2, 4, and 6 keV implants in Ge, respectively. The electrical activation of ultra-shallow B{sup +} implants at 2, 4, and 6 keV to fluences ranging from 5.0 Multiplication-Sign 10{sup 13} to 5.0 Multiplication-Sign 10{sup 15} cm{sup -2} was studied using micro Hall effect measurements after annealing at 400-600 Degree-Sign C for 60 s. For both c-Ge and PA-Ge, a large fraction of the implanted dose is rendered inactive due to the formation of a presumable B-Ge cluster. The B lattice location in samples annealed at 400 Degree-Sign C for 60 s was characterized by channeling analysis with a 650 keV H{sup +} beam by utilizing the {sup 11}B(p, {alpha})2{alpha} nuclear reaction and confirmed the large fraction of off-lattice B for both c-Ge and PA-Ge. Within the investigated annealing range, no significant change in activation was observed. An increase in the fraction of activated dopant was observed with increasing energy which suggests that the surface proximity and the local point defect environment has a strong impact on B activation in Ge. The results suggest the presence of an inactive B-Ge cluster for ultra-shallow implants in both c-Ge and PA-Ge that remains stable upon annealing for temperatures up to 600 Degree-Sign C.
Yates, B. R.; Darby, B. L.; Jones, K. S. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Petersen, D. H. [DTU Nanotech, Department of Micro- and Nanotechnology, Technical University of Denmark, DK-2800 Kgs. Lyngby (Denmark); Hansen, O. [DTU Nanotech, Department of Micro- and Nanotechnology, Technical University of Denmark, DK-2800 Kgs. Lyngby (Denmark); CINF, Center for Individual Nanoparticle Functionality, Technical University of Denmark, DK-2800 Kongens Lyngby (Denmark); Lin, R.; Nielsen, P. F. [CAPRES A/S, Scion-DTU, DK-2800 Kgs. Lyngby (Denmark); Romano, L. [IMM-CNR MATIS and Dipartimento di Fisica e Astronomia, Universita di Catania, Via S. Sofia 64, I-95123 Catania (Italy); Doyle, B. L. [Sandia National Laboratories, MS-1056, Albuquerque, New Mexico 87185 (United States); Kontos, A. [Applied Materials, Gloucester, Massachusetts 01930 (United States)
GE, Clean Energy Fuels Partner to Expand Natural Gas Highway | OpenEI
GE, Clean Energy Fuels Partner to Expand Natural Gas Highway GE, Clean Energy Fuels Partner to Expand Natural Gas Highway Home > Groups > Clean and Renewable Energy Jessi3bl's picture Submitted by Jessi3bl(15) Member 16 December, 2012 - 19:18 clean energy Clean Energy Fuels energy Environment Fuel GE Innovation Partnerships Technology Innovation & Solutions Transportation Trucking GE, Clean Energy Fuels Partner to Expand 'Natural Gas Highway' GE and Clean Energy Fuels announced a collaboration to expand the infrastructure for natural gas transportation in the United States. The agreement supports Clean Energy's efforts in developing America's Natural Gas Highway, a fueling network that will enable trucks to operate on liquefied natural gas coast to coast and border to border. Clean Energy Fuels will initially purchase two ecomagination-qualified
902; W(A)-2012-019; CH-1662 902; W(A)-2012-019; CH-1662 GE Energy (USA) LLC (GE), requests an advance waiver of domestic and foreign patent rights for all subject inventions made under the above cooperative agreement for work entitled, "Seeping Studies to Evaluate the Benefits of an Advanced Dry Feed System on the Use of Low-Rank Coal". Under this agreement, GE will demonstrate the advantage of using GE's new, advanced dry feed system (Posimetric Feed System-PFS) for converting low rank coal to electrical power in an IGCC plant configured for 90% Carbon Capture Utilization and Storage (CCUS). The PFS is centered on GE's proprietary Posimetric Feeder, a mechanical device that behaves like a particulate solids pump and is capable of pressurizing dry, ground coal to over 100 psi
Titan Propels GE Wind Turbine Research into New Territory | ornl.gov
Features Features 2014 2013 2012 2011 2010 News Home | ORNL | News | Features | 2013 SHARE Titan Propels GE Wind Turbine Research into New Territory Simulations of freezing water can help engineers design better blades GE simulated hundreds of water droplets, each including one million molecules. Simulations accelerated at least 200 times over pre-GPU estimates permitting GE to study the nucleation of individual ice molecules.Vizualization by M. Matheson (ORNL) GE simulated hundreds of water droplets, each including one million molecules. Simulations accelerated at least 200 times over pre-GPU estimates permitting GE to study the nucleation of individual ice molecules.Vizualization by M. Matheson (ORNL) (hi-res image) The amount of global electricity supplied by wind, the world's fastest
VEA-0016 - In the Matter of GE Appliances | Department of Energy
6 - In the Matter of GE Appliances 6 - In the Matter of GE Appliances VEA-0016 - In the Matter of GE Appliances Sub-Zero Freezer Co. (Sub-Zero), GE Appliances (GE), and Whirlpool Corporation (Whirlpool) filed appeals of our November 3, 2000 decision, granting Viking Range Corporation (Viking) a six-month exception from the 2001 energy appliance efficiency standards for built-in refrigerators. Viking Range Corp., 28 DOE ¶ 81,002 (2000). As discussed below, we have granted the appeals in part. As a result, the six-month exception will be limited to 475 refrigerators per month and will be subject to a monthly reporting requirement. vea0015-16-17.pdf More Documents & Publications VEH-0015 - In the Matter of Sub-Zero Freezer Co. VEA-0015 - In the Matter of Sub-Zero Freezer Co. VEA-0017 - In the Matter of Whirlpool Corporation
DEC. -15' 97(MON) 00:19 IPL DO DEC. -15' 97(MON) 00:19 IPL DO TEL:I 630 5 2779 P. 002 BTATEMENT OF CONBZDRUATIOHN REQUEST BY GENERAL ELECTRIC COMPANY(GE) FOR AN ADVANCED WAIVER OF DOMESTIC AND FOREIGN INVENTION RIGHTS UNDER COOPERATIVE AGREEMENT NO. DE-FC36-97GO10236, W(A)-97-024, CH-0929 The Petitioner, General Electric Company (GE), was awarded this cooperative agreement in response to a proposal for an affordable compact fluorescent lamp (CFL). The initial phase of this work is being performed under DOE Contract No. DE-FC36-97G010236. GE has requested a waiver of domestic and foreign patent rights for all subject inventions under this agreement. As brought out in GE's response to questions 2& 3, the total estimated cost of the project is $1,117,342 with GE paying 25% and DOE providing the balance.
Mn solid solutions in self-assembled Ge/Si (001) quantum dot heterostructures
Heteroepitaxial Ge{sub 0.98}Mn{sub 0.02} quantum dots (QDs) on Si (001) were grown by molecular beam epitaxy. The standard Ge wetting layer-hut-dome-superdome sequence was observed, with no indicators of second phase formation in the surface morphology. We show that Mn forms a dilute solid solution in the Ge quantum dot layer, and a significant fraction of the Mn partitions into a sparse array of buried, Mn-enriched silicide precipitates directly underneath a fraction of the Ge superdomes. The magnetic response from the ultra-thin film indicates the absence of robust room temperature ferromagnetism, perhaps due to anomalous intermixing of Si into the Ge quantum dots.
Kassim, J.; Nolph, C.; Reinke, P.; Floro, J. [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Jamet, M. [Institut Nanosciences et Cryogenie/SP2M, CEA-UJF, F-38054 Grenoble (France)
An ultra-thin buffer layer for Ge epitaxial layers on Si
Using an Fe{sub 3}Si insertion layer, we study epitaxial growth of Ge layers on a Si substrate by a low-temperature molecular beam epitaxy technique. When we insert only a 10-nm-thick Fe{sub 3}Si layer in between Si and Ge, epitaxial Ge layers can be obtained on Si. The detailed structural characterizations reveal that a large lattice mismatch of {approx}4% is completely relaxed in the Fe{sub 3}Si layer. This means that the Fe{sub 3}Si layers can become ultra-thin buffer layers for Ge on Si. This method will give a way to realize a universal buffer layer for Ge, GaAs, and related devices on a Si platform.
Kawano, M.; Yamada, S.; Tanikawa, K.; Miyao, M.; Hamaya, K. [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)] [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan); Sawano, K. [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Tokyo 158-0082 (Japan)] [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Tokyo 158-0082 (Japan)
Heat capacity of low temperature Ge- and Si-calorimeters and optimization of As-implanted silicon thermistors
Alessandrello, A; Cerofolini, G F; Fiorini, Ettore; Giuliani, A; Liguori, C; Meda, L; Niinikoski, T O; Rijllart, A
Depth Profiles of Radionuclides Induced in Shielding Concrete of the 12 GeV Proton Accelerator Facility at KEK
Miura, T; Ishihama, S; Ohotsuka, N; Kunifuda, T
First Measurements of the Longitudinal Bunch Profile at SLAC Using Coherent Smith-Purcell Radiation at 28GeV
Blackmore, V; Doucas, G; Kimmitt, M F; Molloy, S; Ottewell, B; Perry, C; Woods, M
Hot-Wire Deposition of Hydrogenated Nanocrystalline SiGe Films for Thin-Film Si Based Solar Cells
Hot-Wire Deposition of Hydrogenated Nanocrystalline SiGe Films for Thin-Film Si Based Solar Cells bandgap absorber in an a-Si/a-SiGe/nc-SiGe(nc- Si) triple-junction solar cell due to its higher optical investigations of nc-SiGe:H thin films made by hot-wire chemical vapor deposition (HWCVD) with a coil
Deng, Xunming
Preparation of Mn{sub 2}SnO{sub 4} nanoparticles as the anode material for lithium secondary battery
The ultrafine Mn{sub 2}SnO{sub 4} nanoparticles with diameters of 5-10 nm have been prepared by thermal decomposition of precursor MnSn(OH){sub 6}. The MnSn(OH){sub 6} nanoparticles precursor was synthesized by a hydrothermal microemulsion method. X-ray diffraction, transmission electron microscopy, high-resolution transmission electron microscopy and electron diffraction have been employed to characterize the crystal structures and morphologies of the as-prepared samples. High-resolution transmission electron microscopy observations revealed that the as-synthesized nanoparticles were single crystals. The thermal characterization was studied by differential thermal analysis and thermogravimetry analysis measurements. Electrochemical test showed that the Mn{sub 2}SnO{sub 4} nanoparticles exhibited a high initial charge-discharge capacity of 1320 mAh/g.
Lei Shuijin [School of Materials Science and Engineering, Nanchang University, No. 999, Xuefu Avenue Honggutan New District, Nanchang, Jiangxi 330031 (China)], E-mail: firstname.lastname@example.com; Tang Kaibin [Nanomaterial and Nanochemistry, Hefei National Laboratory for Physical Sciences at Micro-scale, University of Science and Technology of China, Hefei, Anhui 230026 (China)], E-mail: email@example.com; Chen Chunhua; Jin Yi [Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, Anhui 230026 (China); Zhou Lang [School of Materials Science and Engineering, Nanchang University, No. 999, Xuefu Avenue Honggutan New District, Nanchang, Jiangxi 330031 (China)
A three-dimensional Macroporous Cu/SnO2 composite anode sheet prepared via a novel method
Macroporous Cu/SnO2 composite anode sheets were prepared by a novel method which is based on slurry blending, tape casting, sintering, and reducing of metal oxides. Such composite Cu/SnO2 anode sheets have no conducting carbons and binders, and show improved discharge capacity and cycle life than the SnO2 electrode from conventional tape-casting method on Cu foil. This methodology produces limited wastes and is also adaptable to many other materials. It is easy for industrial scale production. With the optimization of particle size of the metal oxide, pore size, pore volume and other factors, this kind of macroporous Cu/SnO2 composite anode sheets could give significantly improved capacity and cycle life.
Xu, Wu; Canfield, Nathan L.; Wang, Deyu; Xiao, Jie; Nie, Zimin; Zhang, Jiguang
Growth of a Au-Ni-Sn intermetallic compound on the solder-substrate interface after aging (thesis)
Chan and J.K.L. Lai, �Aging Studies of Cu-Sn Intermetallicfound that after extensive aging (150 �C for two weeks inDarveaux, �Effect of the Aging on the Strenght and Ductility
Minor, A.M.
Effect of bonding and aging temperatures on bond strengths of Cu with 75Sn25In solders
In the present study, the interaction between thin film Cu and non-eutectic Sn-In is studied. The effects of the bonding and aging temperature on microstructure, IMC formation and also shear strength are investigated by ...
Thompson, Carl V.
The Effect of High-Resistance SnO2 on CdS/CdTe Device Performance
In this paper, we have studied the effect of high-resistance SnO2 buffer layers, deposited by low-pressure chemical-vapor deposition, on CdS/CdTe device performance. Our results indicate that when CdS/CdTe devices have a very thin layer of CdS or no CdS at all, the i-SnO2 buffer layer helps to increase device efficiency. When the CdS layer is thicker than 600{angstrom}, the device performance is dominated by CdS thickness, not the i-SnO2 layer. If a very thin CdS layer is to be used to enhance device performance, we conclude that a better SnO2 buffer layer is needed.
Li, W.; Ribelin, R.; Mahathongdy, Y.; Albin, D.; Dhere, R.; Rose, D.; Asher, S.; Moutinho, H.; Sheldon, P.
Search for Heavy Majorana Neutrinos in Same-Sign mumu+jets and ee+jets Events in pp Collisions at sqrt(s) = 7 GeV
cut (GeV) Predicted MC truth Ratio Table 6.6: Predicted andcut (GeV) Predicted MC truth Ratio Table 6.7: Predicted and
Giordano, Ferdinando
Sn-Li, a new coolant/breeding material for fusion applications.
A new breeding material, Sn-Li has been proposed for the APEX and ALPS programs. The key reason for proposing this material is that it has very low vapor pressure. Since both APEX and ALPS are investigating free surface flow for the blanket and divertor, respectively, low vapor pressure is a big advantage. This paper summarizes the results from a preliminary investigation. The early conclusion is that Sn-Li can be used as the coolant/breeding material for the APEX and ALPS applications. It has several attractive features, such as low vapor pressure and high thermal conductivity, but it also has some potential issues, such as material compatibility and activation. Further investigation will be required to assess the potential advantages of this material compared to other breeding materials.
Sze, D.-K.; Mattas, R.; Wang, Z.; Cheng, E. T.; Sawan, M.; Zinkle, S.; McCarthy, K. A.
Improvement of thermoelectric properties for half-Heusler TiNiSn by interstitial Ni defects
We have synthesized off-stoichiometric Ti-Ni-Sn half-Heusler thermoelectrics in order to investigate the relation between randomly distributed defects and thermoelectric properties. A small change in the composition of Ti-Ni-Sn causes a remarkable change in the thermal conductivity. An excess content of Ni realizes a low thermal conductivity of 2.93 W/mK at room temperature while keeping a high power factor. The low thermal conductivity originates in the defects generated by an excess content of Ni. To investigate the detailed defect structure, we have performed first-principles calculations and compared with x ray photoemission spectroscopy measurement. Based on these analyses, we conclude that the excess Ni atoms randomly occupy the vacant sites in the half-Heusler structure, which play as phonon scattering centers, resulting in significant improvement of the figure of merit without any substitutions of expensive heavy elements, such as Zr and Hf.
Hazama, Hirofumi; Matsubara, Masato; Asahi, Ryoji [Toyota Central R and D Labs., Inc., Nagakute, Aichi 480-1192 (Japan); Takeuchi, Tsunehiro [Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)
Low energy spin dynamics in the spin ice, Ho2Sn2O7
The magnetic properties of Ho{sub 2}Sn{sub 2}O{sub 7} have been investigated and compared to other spin ice compounds. Although the lattice has expanded by 3% relative to the better studied Ho{sub 2}Ti{sub 2}O{sub 7} spin ice, no significant changes were observed in the high temperature properties, T {approx}> 20 K. As the temperature is lowered and correlations develop, Ho{sub 2}Sn{sub 2}O{sub 7} enters its quantum phase at a slightly higher temperature than Ho{sub 2}Ti{sub 2}O{sub 7} and is more antiferromagnetic in character. Below 80 K a weak inelastic mode associated with the holmium nuclear spin system has been measured. The hyperfine field at the holmium nucleus was found to be {approx}700 T.
Ehlers, Georg [ORNL; Huq, Ashfia [ORNL; Diallo, Souleymane Omar [Oak Ridge National Laboratory (ORNL); Adriano, Cris [ORNL; Rule, K [Helmholtz-Zentrum Berlin; Cornelius, A. L. [University of Nevada, Las Vegas; Fouquet, Peter [Institut Laue-Langevin (ILL); Pagliuso, P G [Instituto de Fisica Gleb Wataghin, Unicamp, Brazil; Gardner, Jason [Indiana University
On Absorption by Circumstellar Dust, With the Progenitor of SN2012aw as a Case Study
We use the progenitor of SN2012aw to illustrate the consequences of modeling circumstellar dust using Galactic (interstellar) extinction laws that (1) ignore dust emission in the near-IR and beyond; (2) average over dust compositions, and (3) mis-characterize the optical/UV absorption by assuming that scattered photons are lost to the observer. The primary consequences for the progenitor of SN2012aw are that both the luminosity and the absorption are significantly over-estimated. In particular, the stellar luminosity is most likely in the range 10^4.8 0.3 micron) and total (absorption plus scattering) V-band optical depth (tau < 20). These do not include the contributions of dust emission, but provide a simple, physical alternative to incorrectly using interstellar extinction laws.
Kochanek, C S; Dai, X
Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions
In this work, we investigate the structural properties of Ge quantum dot lattices in amorphous silica matrix, prepared by low-temperature magnetron sputtering deposition of (Ge+SiO{sub 2})/SiO{sub 2} multilayers. The dependence of quantum dot shape, size, separation, and arrangement type on the Ge-rich (Ge + SiO{sub 2}) layer thickness is studied. We show that the quantum dots are elongated along the growth direction, perpendicular to the multilayer surface. The size of the quantum dots and their separation along the growth direction can be tuned by changing the Ge-rich layer thickness. The average value of the quantum dots size along the lateral (in-plane) direction along with their lateral separation is not affected by the thickness of the Ge-rich layer. However, the thickness of the Ge-rich layer significantly affects the quantum dot ordering. In addition, we investigate the dependence of the multilayer average atomic composition and also the quantum dot crystalline quality on the deposition parameters.
Pinto, S. R. C.; Ramos, M. M. D.; Gomes, M. J. M. [University of Minho, Centre of Physics and Physics Department, Braga 4710-057 (Portugal); Buljan, M. [Ruder Boskovic Institute, Bijenicka cesta 54, Zagreb 10000 (Croatia); Chahboun, A. [University of Minho, Centre of Physics and Physics Department, Braga 4710-057 (Portugal); Physics Department, FST Tanger, Tanger BP 416 (Morocco); Roldan, M. A.; Molina, S. I. [Departamento de Ciencia de los Materiales e Ing. Metalurgica y Q. I., Universidad de Cadiz, Cadiz (Spain); Bernstorff, S. [Sincrotrone Trieste, SS 14 km163, 5, Basovizza 34012 (Italy); Varela, M.; Pennycook, S. J. [Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Barradas, N. P.; Alves, E. [Instituto Superior Tecnico e Instituto Tecnologico e Nuclear-, EN10, Sacavem 2686-953 (Portugal)
Pinto, S. [University of Minho, Portugal; Roldan Gutierrez, Manuel A [ORNL; Ramos, M. M.D. [University of Minho, Portugal; Gomes, M.J.M. [University of Minho, Portugal; Molina, S. I. [Universidad de Cadiz, Spain; Pennycook, Stephen J [ORNL; Varela del Arco, Maria [ORNL; Buljan, M. [R. Boskovic Institute, Zagreb, Croatia; Barradas, N. [Instituto Tecnologico e Nuclear (ITN), Lisbon, Portugal; Alves, E. [Instituto Tecnologico e Nuclear (ITN), Lisbon, Portugal; Chahboun, A. [FST Tanger, Morocco; Bernstorff, S. [Sincrotrone Trieste, Basovizza, Italy
Hydrogen Sensor Based on Pd/GeO{sub 2} Using a Low Cost Electrochemical Deposition
This work reports on a synthesis of sub micron germanium dioxide (GeO{sub 2}) on porous silicon (PS) by electrochemical deposition. n-type Si (100) wafer was used to fabricate (PS) using conventional method of electrochemical etching in HF based solution. A GeCl{sub 4} was directly hydrolyzed by hydrogen peroxide to produce pure GeO{sub 2}, and then electrochemically deposited on PS. Followed by palladium (Pd) contact on GeO{sub 2} /PS was achieved by using RF sputtering technique. The grown GeO{sub 2} crystals were characterized using SEM and EDX. I-V characteristics of Pd/ GeO{sub 2} were recorded before and after hydrogen gas exposure as well as with different H{sub 2} concentrations and different applied temperatures. The sensitivity of Pd/ GeO{sub 2} also has been investigated it could be seen to increase significantly with increased hydrogen concentration while it decreased with increase temperature.
Jawad, M. J.; Hashim, M. R. [School of Physics, Universiti Sains Malaysia, 11800-Penang (Malaysia); Ali, N. K. [Material Innovations and Nanoelectronics Research Group, Faculty of Electrical Engineering, Department of electronic engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia)
A COMPACT DEGENERATE PRIMARY-STAR PROGENITOR OF SN 2011fe
While a white dwarf (WD) is, from a theoretical perspective, the most plausible primary star of a Type Ia supernova (SN Ia), many other candidates have not been formally ruled out. Shock energy deposited in the envelope of any exploding primary contributes to the early SN brightness and, since this radiation energy is degraded by expansion after the explosion, the diffusive luminosity depends on the initial primary radius. We present a new non-detection limit of the nearby SN Ia 2011fe, obtained at a time that appears to be just 4 hr after explosion, allowing us to directly constrain the initial primary radius (R{sub p} ). Coupled with the non-detection of a quiescent X-ray counterpart and the inferred synthesized {sup 56}Ni mass, we show that R{sub p} {approx} 10{sup 4} g cm{sup -3}, and that the effective temperature must be less than a few Multiplication-Sign 10{sup 5} K. This rules out hydrogen-burning main-sequence stars and giants. Constructing the helium-burning and carbon-burning main sequences, we find that such objects are also excluded. By process of elimination, we find that only degeneracy-supported compact objects-WDs and neutron stars-are viable as the primary star of SN 2011fe. With few caveats, we also restrict the companion (secondary) star radius to R{sub c} {approx}< 0.1 R{sub Sun }, excluding Roche-lobe overflowing red giant and main-sequence companions to high significance.
Bloom, Joshua S.; Kasen, Daniel; Shen, Ken J.; Nugent, Peter E. [Department of Astronomy, University of California, Berkeley, Berkeley CA, 94720-3411 (United States); Butler, Nathaniel R. [School of Earth and Space Exploration, Arizona State University, P.O. Box 871404, Tempe, AZ 85287-1404 (United States); Graham, Melissa L.; Andrew Howell, D. [Las Cumbres Observatory Global Telescope Network, 6740 Cortona Dr., Suite 102, Goleta, CA 93117 (United States); Kolb, Ulrich; Holmes, Stefan; Haswell, Carole A. [Department of Physical Sciences, Open University, Walton Hall, Milton Keynes MK7 6AA (United Kingdom); Burwitz, Vadim [Max-Planck-Institut fuer extraterrestrische Physik, Giessenbachstrasse, 85748 Garching (Germany); Rodriguez, Juan [Observatori Astronomic de Mallorca, Cami de l'Observatori, 07144 Costitx, Mallorca (Spain); Sullivan, Mark, E-mail: firstname.lastname@example.com [Department of Physics (Astrophysics), University of Oxford, Keble Road, Oxford OX1 3RH (United Kingdom)
Electromechanical properties of freestanding graphene functionalized with tin oxide (SnO{sub 2}) nanoparticles
Freestanding graphene membranes were functionalized with SnO{sub 2} nanoparticles. A detailed procedure providing uniform coverage and chemical synthesis is presented. Elemental composition was determined using scanning electron microscopy combined with energy dispersive x-ray analysis. A technique called electrostatic-manipulation scanning tunneling microscopy was used to probe the electromechanical properties of functionalized freestanding graphene samples. We found ten times larger movement perpendicular to the plane compared to pristine freestanding graphene and propose a nanoparticle encapsulation model.
Dong, L. [College of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao 266042 (China); Department of Physics, Astronomy, and Materials Science, Missouri State University, Springfield, Missouri 65897 (United States); Hansen, J. [Department of Physics, Astronomy, and Materials Science, Missouri State University, Springfield, Missouri 65897 (United States); Xu, P.; Ackerman, M. L.; Barber, S. D.; Schoelz, J. K.; Qi, D.; Thibado, P. M. [Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701 (United States)
High strength Sn-Mo-Nb-Zr alloy tubes and method of making same
Tubes for use in nuclear reactors fabricated from a quaternary alloy comprising 2.5-4.0 wt% Sn, 0.5-1.5 wt% Mo, 0.5-1.5 wt% Nb, balance essentially Zr. The tubes are fabricated by a process of hot extrusion, heat treatment, cold working to size and age hardening, so as to produce a microstructure comprising elongated .alpha. grains with an acicular transformed .beta. grain boundary phase.
Cheadle, Brian A. (Deep River, CA)
An in situ X-ray absorption spectroscopy investigation of the effect of Sn additions to carbon-supported Pt electrocatalysts: Part 1
Carbon-supported platinum (Pt/C) with an adsorbed layer of underpotential deposited (upd) Sn is a much better catalyst for the methanol oxidation reaction (MOR) than a carbon-supported platinum-tin (PtSn/C) alloy. In situ X-ray absorption (XAS) was used to determine the differences in the effects that the two methods of Sn addition have on the electronic properties and the structural properties of the catalyst. X-ray diffraction and XAS at the Pt L{sub 3} and L{sub 2} edges indicate that the PtSn/C catalyst has a Pt{sub 3}Sn L1{sub 2} structure, and alloying with Sn causes partial filling of the Pt d band vacancies and an increase in the Pt-Pt bond distance from 2.77 to 2.8 {angstrom}. However, upd Sn does not perturb Pt structurally or electronically. XAS at the Sn K edge indicates that both the upd Sn on Pt/C and the surface Sn on PtSn/C are associated with oxygenated species at all potentials, and that the nature and strength of the Sn-O bonds are potential dependent. The differences in the activity of the two catalysts for the MOR are due to the effects of alloying on the Pt electronic structure that inhibit the ability of the Pt to adsorb methanol and dissociate C-H bonds. The ability of PtSn/C to adsorb oxygen at low potentials enhances its activity for CO oxidation.
Mukerjee, S.; McBreen, J. [Brookhaven National Lab., Upton, NY (United States). Dept. of Applied Science
Preparation and photocatalytic activity of high-efficiency visible-light-responsive photocatalyst SnS{sub x}/TiO{sub 2}
Visible-light-responsive composite photocatalysts SnS{sub 2}/TiO{sub 2} and SnS/TiO{sub 2} with different mass ratios were prepared by in-situ synthesis technology in solution with commercial TiO{sub 2}. The junction-based materials SnS{sub x} (x=1, 2)/TiO{sub 2} were found to have high visible-light photocatalytic performance and possess much better activity than the single-phase SnS{sub x} or TiO{sub 2}. The greatly enhanced photocatalytic activity of the SnS{sub x}/TiO{sub 2} composites was mainly attributed to the matching band potentials and efficient charge transfer and separation at the tight-bonding interface between SnS{sub x} and TiO{sub 2}. The fact was confirmed by the comparison of photocatalytic activities of the SnS{sub 2}/TiO{sub 2} samples prepared by physical mixing method and in-situ synthesis technique. - Graphical Abstract: Visible-light-responsive composite photocatalysts SnS{sub 2}/TiO{sub 2} and SnS/TiO{sub 2} with different mass ratios were prepared by in-situ synthesis technology in solution with commercial TiO{sub 2}. The photocatalysts SnS{sub x} (x=1, 2) and SnS{sub x}/TiO{sub 2} possess excellent photocatalytic activities. The greatly enhanced photocatalytic activity of the SnS{sub x}/TiO{sub 2} composites was mainly attributed to the matching band potentials and efficient charge transfer and separation at the tight-bonding interface between SnS{sub x} and TiO{sub 2}.
Yang Chongyin; Wang Wendeng; Shan Zhichao [State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Huang Fuqiang, E-mail: firstname.lastname@example.com [State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China)
In Situ Observation of the Electrochemical Lithiation of a Single SnO2 Nanowire Electrode
We report the first real-time transmission electron microscopy (TEM) observations of the structural evolution and phase transformation of lithium-ion battery anode during the battery charging process. A nanobattery consisting of a single SnO2 nanowire anode and an ionic liquid electrolyte was successfully constructed in a TEM. We observed that during the charging process, the SnO2 crystal was converted to Li2O glass with LixSn nanocrystalline precipitates as the reaction front propagated progressively along the nanowire. After the reaction front passed, the nanowire showed swelling, elongation, and large off-axis distortion (spiraling). Upon completion of the electrochemical charging, the nanowire showed up to 120% elongation and a 30% increase in diameter with a volume expansion of about 272%. The charging front, which separates the reacted and unreacted sections of the nanowire, contains a high density of mobile dislocations, which are continuously nucleated and annihilated at the moving reaction front. This dislocation cloud indicates large in-plane misfit stresses, and serves as structural precursor to the eventual complete solid-state amorphization. The rate of charging in our nanobatteries is found to be proportional to the inverse square root of nanowire length, indicating that a standalone nanobattery or integrated arrays of nanobatteries should have kinetic advantage over conventional battery design. The present observations also provide important mechanistic insights for the design of advanced batteries with improved performance and lifetime for broad electrical energy storage applications.
Huang, J. Y.; Zhong, Li; Wang, Chong M.; Sullivan, John P.; Xu, Wu; Zhang, Li Q.; Mao, Scott; Hudak, N.; Liu, Xiao H.; Subramanian, Arun Kumar; Fan, Hongyou; Qi, Liang; Kushima, Akihiro; Li, Ju
Shell Structure from 100Sn to 78Ni: Implications for Nuclear Astrophysics
The single-particle structure and shell gap of {sup 100}Sn is inferred from prompt in-beam and delayed {gamma}-ray spectroscopy of seniority and spin-gap isomers. Recent results in {sup 94, 95}Ag and {sup 98}Cd stress the importance of large-scale shell model calculations employing realistic interactions for the isomerism, np-nh excitations and E2 polarization of the {sup 100}Sn core. The strong monopole interaction of the {Delta}l = 0 spin-flip partners {pi}g{sub 9/2-} {nu}g{sub 7/2} in N = 51 isotones below {sup 100}Sn is echoed in the {Delta}l = 1 pf5/2- ?g9/2 pair of nucleons, which is decisive for the persistence of the N = 50 shell gap in {sup 78}Ni. This is corroborated by recent experimental data on {sup 70, 76}Ni, {sup 78}Zn. The importance of monopole driven shell evolution for the appearance of new shell closures in neutron-rich nuclei and implications for r-process abundances near the N = 82 shell is discussed.
Grawe, Hubert H [ORNL; Blazhev, A. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Gorska, M. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Mukha, I. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Plettner, C. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Roeckl, E. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Nowacki, F. [IReS, Strasbourg, Cedex, France; Grzywacz, Robert Kazimierz [ORNL; Sawicka, M. [University of Warsaw
A LUMINOUS AND FAST-EXPANDING TYPE Ib SUPERNOVA SN 2012au
We present a set of photometric and spectroscopic observations of a bright Type Ib supernova SN 2012au from -6 days until {approx} + 150 days after maximum. The shape of its early R-band light curve is similar to that of an average Type Ib/c supernova. The peak absolute magnitude is M{sub R} = -18.7 {+-} 0.2 mag, which suggests that this supernova belongs to a very luminous group among Type Ib supernovae. The line velocity of He I {lambda}5876 is about 15,000 km s{sup -1} around maximum, which is much faster than that in a typical Type Ib supernova. From the quasi-bolometric peak luminosity of (6.7 {+-} 1.3) Multiplication-Sign 10{sup 42} erg s{sup -1}, we estimate the {sup 56}Ni mass produced during the explosion as {approx}0.30 M{sub Sun }. We also give a rough constraint to the ejecta mass 5-7 M{sub Sun} and the kinetic energy (7-18) Multiplication-Sign 10{sup 51} erg. We find a weak correlation between the peak absolute magnitude and He I velocity among Type Ib SNe. The similarities to SN 1998bw in the density structure inferred from the light-curve model as well as the large peak bolometric luminosity suggest that SN 2012au had properties similar to energetic Type Ic supernovae.
Takaki, Katsutoshi; Fukazawa, Yasushi; Itoh, Ryosuke; Ueno, Issei; Ui, Takahiro; Urano, Takeshi [Department of Physical Science, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8526 (Japan); Kawabata, Koji S.; Akitaya, Hiroshi; Moritani, Yuki; Ohsugi, Takashi; Uemura, Makoto; Yoshida, Michitoshi [Hiroshima Astrophysical Science Center, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8526 (Japan); Yamanaka, Masayuki [Kwasan Observatory, Kyoto University, Ohmine-cho Kita Kazan, Yamashina-ku, Kyoto 607-8471 (Japan); Maeda, Keiichi; Nomoto, Ken'ichi [Kavli Institute for the Physics and Mathematics of the Universe (WPI), Todai Institutes for Advanced Study, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8583 (Japan); Tanaka, Masaomi [National Astronomical Observatory of Japan, 2-21-1 Osawa, Mitaka, Tokyo 181-8588 (Japan); Kinugasa, Kenzo [Nobeyama Radio Observatory, National Astronomical Observatory of Japan, 462-2 Nobeyama, Minamimaki, Nagano 384-1305 (Japan); Sasada, Mahito, E-mail: firstname.lastname@example.com [Department of Astronomy, Kyoto University, Kitashirakawa-Oiwake-cho, Sakyo-ku, Kyoto 606-8502 (Japan)
Increase Jc by Improving the Array of Nb3Sn strands for Fusion Application
During Phase I, our efforts were focusing on improving the array of subelement in the tube type strands by hardening the Sn core and the subelement matrix to effectively increase the Jc of the strands. Below is a summary of the results. 1) We were unsuccessful in improving the array using a Cu-Sn matrix approach. 2) We slightly improved the array using Sn with 1.5at%Ti doped core, and a 217-subelement restacked strand was made and drawn down without any breakage. 3) We greatly improved the array using the Glidcop Al-15 to replace the pure Cu sheath in the subelement, and a 217-subelement restacked strand was made and drawn down. Both strands have very good drawability and the array showed good improvement. 4) We also improved the array using improved wire drawing techniques using Hyper Tech�?¢�?�?�?�?s new caterpillar wire drawing machines to enable straight wire drawing for the entire wire drawing process. 5) The 919-subelement restack strand shows its non-Cu Jc over 2100 A/mm2 at 12 T/4.2 K and AC loss of 508 mJ/cm3.
Dr. Xuan Peng
THE ULTIMATE LIGHT CURVE OF SN 1998bw/GRB 980425
We present multicolor light curves of SN 1998bw which appeared in ESO184-G82 in close temporal and spatial association with GRB 980425. The light curves are based on observations conducted at Cerro Tololo Inter-American Observatory (CTIO) and data from the literature. The CTIO photometry reaches {approx}86 days after the gamma-ray burst (GRB) in U and {approx}160 days after the GRB in BV(RI){sub C}. The observations in U extend the previously known coverage by about 30 days and determine the slope of the early exponential tail. We calibrate a large set of local standards in common with those of previous studies and use them to transform published observations of the supernova (SN) to our realization of the standard photometric system. We show that the photometry from different sources merges smoothly and we provide a unified set of 300 observations of the SN in five bands. Using the extensive set of spectra in the public domain, we compute extinction and K-corrections and build quasi-bolometric unreddened rest-frame light curves. We provide low-degree piecewise spline fits to these light curves with daily sampling. They reach {approx}86 rest-frame days after the GRB with U-band coverage and {approx}498 rest-frame days after the GRB without U.
Clocchiatti, Alejandro [Departamento de Astronomia y Astrofisica, Pontificia Universidad Catolica de Chile, Casilla 306, Santiago 22 (Chile); Suntzeff, Nicholas B. [Department of Physics and Astronomy, Mitchell Institute for Fundamental Physics and Astronomy, Texas A and M University, College Station, TX 77843 (United States); Covarrubias, Ricardo [Australian Astronomical Observatory, P.O. Box 296, Epping, NSW 1710 (Australia); Candia, Pablo, E-mail: email@example.com, E-mail: email@example.com, E-mail: firstname.lastname@example.com, E-mail: firstname.lastname@example.com [Gemini Observatory, Casilla 603, La Serena (Chile)
Detection of an outburst one year prior to the explosion of SN 2011ht
Using imaging from the Pan-STARRS1 survey, we identify a precursor outburst at epochs 287 and 170 days prior to the reported explosion of the purported Type IIn supernova (SN) 2011ht. In the Pan-STARRS data, a source coincident with SN 2011ht is detected exclusively in the \\zps\\ and \\yps-bands. An absolute magnitude of M$_z\\simeq$-11.8 suggests that this was an outburst of the progenitor star. Unfiltered, archival Catalina Real Time Transient survey images also reveal a coincident source from at least 258 to 138 days before the main event. We suggest that the outburst is likely to be an intrinsically red eruption, although we cannot conclusively exclude a series of erratic outbursts which were observed only in the redder bands by chance. This is only the fourth detection of an outburst prior to a claimed SN, and lends credence to the possibility that many more interacting transients have pre-explosion outbursts, which have been missed by current surveys.
Fraser, M; Kotak, R; Smartt, S J; Smith, K W; Polshaw, J; Drake, A J; Boles, T; Lee, C -H; Burgett, W S; Chambers, K C; Draper, P W; Flewelling, H; Hodapp, K W; Kaiser, N; Kudritzki, R -P; Magnier, E A; Price, P A; Tonry, J L; Wainscoat, R J; Waters, C
Microscopic description of isoscalar giant resonance excitations in ??Ca and ��?SN nuclei
This thesis presents a microscopic description of isoscalar giant resonance excitations in ??Ca and ��? Sn nuclei within the self-consistent Skyrme-Hartree-Fock-Random-Phase-Approximation (HF-RPA) theory. Such characteristic features of the Isoscalar Giant Resonance as strength function, transition density and cross-sections for ??Ca and ��?Sn nuclei are obtained. In this analysis, the SL1 Skyrme interaction associated with 230 MeV for the value of nuclear matter incompressibility coefficient K is chosen. The selection of nuclei is based on the availability of recent experimental results from Texas A&M University. The coordinate space formulation of the RPA in terms of Green's function is employed to obtain isoscalar monopole and dipole transition strength distributions for ??Ca and ��?Sn nuclei. Calculations are performed with the discretized single-particle continuum. Theoretical transition strength distributions are used to find quantities of interest such as energy positions of resonance states, sum rules and average resonance energies. The cross-section of 240 MeV ?-particle scattering on the above nuclei are analysed within the Distorted Wave Born Approximation (DWBA) using transition densities obtained from the HF-RPA calculations. From this analysis the cross-sections for ISGDR excitations are obtained and compared with the recent experimental data obtained at the Cyclotron Institute, Texas A&M University.
Karki, Bhishma
Increasing the Jc of Tube-Type Nb3Sn Strands
In this Phase I, we successfully made strands with better Cu/Sn ratio to reduce the coarse Nb3Sn grain region, thereby providing the potential of increasing the non-Cu Jc in the Phase II and scaling up to 2�?¢�?�?�? billets with 331 subelements. In order to improve the strand�?¢�?�?�?�?s high field properties, we successfully doped low amount of Ti in the subelements and made a 217-subelement wire which has been drawn down to 0.7 mm without any breakage. This strand gave subelement size of 35 �?�?�?µm. We will scale up the Ti-doped billet to 271-subelement in 1.5�?¢�?�?�? billet in this proposed Phase II. The hexagonal shaped subelements with round Nb-Sn have been developed for a 61-subelement restack. Thus the results indicated that for 217-subelement restack in a 2�?¢�?�?�? billet we have the potential to draw down this type of construction without problems while maintaining a good array to react more Nb to get higher non-Cu Jc in the Phase II.
Hydrogen impurities and shallow donors in SnO2 studied by infrared spectroscopy
Hydrogen has been found to be an important source of n-type conductivity in the transparent conducting oxide SnO2. We have studied the properties of H in SnO2 single crystals with infrared spectroscopy. When H or D is introduced into SnO2 by annealing in an H2 or D2 ambient at elevated temperature, several O-H and O-D vibrational lines are produced along with the low-frequency absorption that is characteristic of free carriers. To probe the relationship between H and the free carriers it introduces, the thermal stability of the free carrier absorption, and its relationship to the thermal stabilities of the O-H lines have been examined. Two H-related donors are found, one that is stable at room temperature on a time scale of weeks and a second that is stable up to 600 C. These electrically active defects are found to interact with other O-H centers and can be converted from one to another by thermal treatments. The vibrational modes have been found to have distinctive polarization properties that provide an important test of microscopic defect models for the several O-H and (O-H)2 centers that we have observed.
BEKISLI, F [Lehigh University, Bethlehem, PA; Stavola, M. [Lehigh University, Bethlehem, PA; FOWLER, W B [Lehigh University, Bethlehem, PA; Boatner, Lynn A [ORNL; Spahr, E. J. [College of William and Mary, Williamsburg, VA; L�pke, G. [Vanderbilt University
Reliability of Sn-3.5Ag Solder Joints in High Temperature Packaging Applications
There is a significant need for next generation, high performance power electronic packages and systems with wide band gap devices to operate at high temperatures in automotive and electricity transmission applications. Sn-3.5Ag solder is a candidate for use in such packages with potential operating temperatures up to 200oC. However, there is a need to understand thermal cycling reliability of Sn-3.5Ag solders subject to such operating conditions. The results of a study on the damage evolution occurring in large area Sn-3.5Ag solders joints between silicon dies and DBC substrates subject to thermal cycling between 200oC and 5oC is presented in this paper. Damage accumulation was followed using high resolution X-ray radiography techniques while nonlinear finite element models were developed based on the mechanical property data available in literature to understand the relationship between the stress state within the solder joint and the damage evolution occurring under thermal cycling conditions. It was observed that regions of damage observed in the experiments do not correspond to the finite element predictions of the location of regions of maximum plastic work.
Muralidharan, Govindarajan [ORNL; Kurumaddali, Nalini Kanth [ORNL; Kercher, Andrew K [ORNL; Leslie, Dr Scott [Powerex Inc
In situ control of As dimer orientation on Ge(100) surfaces
We investigated the preparation of single domain Ge(100):As surfaces in a metal-organic vapor phase epitaxy reactor. In situ reflection anisotropy spectra (RAS) of vicinal substrates change when arsenic is supplied either by tertiarybutylarsine or by background As{sub 4} during annealing. Low energy electron diffraction shows mutually perpendicular orientations of dimers, scanning tunneling microscopy reveals distinct differences in the step structure, and x-ray photoelectron spectroscopy confirms differences in the As coverage of the Ge(100):As samples. Their RAS signals consist of contributions related to As dimer orientation and to step structure, enabling precise in situ control over preparation of single domain Ge(100):As surfaces.
Brueckner, Sebastian; Doescher, Henning [Helmholtz-Zentrum Berlin, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Technische Universitaet Ilmenau, Institut fuer Physik, Postfach 10 05 65, 98684 Ilmenau (Germany); Supplie, Oliver; Luczak, Johannes [Helmholtz-Zentrum Berlin, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Barrigon, Enrique; Rey-Stolle, Ignacio [Instituto de Energia Solar, Universidad Politecnica de Madrid, Avda. Complutense s/n, 28040 Madrid (Spain); Kleinschmidt, Peter [Helmholtz-Zentrum Berlin, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); CiS Forschungsinstitut fuer Mikrosensorik und Photovoltaik GmbH, Konrad-Zuse-Strasse 14, 99099 Erfurt (Germany); Hannappel, Thomas [Helmholtz-Zentrum Berlin, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Technische Universitaet Ilmenau, Institut fuer Physik, Postfach 10 05 65, 98684 Ilmenau (Germany); CiS Forschungsinstitut fuer Mikrosensorik und Photovoltaik GmbH, Konrad-Zuse-Strasse 14, 99099 Erfurt (Germany)
Electroluminescence from Strained Ge membranes and Implications for an Efficient Si-Compatible Laser
We demonstrate room-temperature electroluminescence (EL) from light-emitting diodes (LED) on highly strained germanium (Ge) membranes. An external stressor technique was employed to introduce a 0.76% bi-axial tensile strain in the active region of a vertical PN junction. Electrical measurements show an on-off ratio increase of one order of magnitude in membrane LEDs compared to bulk. The EL spectrum from the 0.76% strained Ge LED shows a 100nm redshift of the center wavelength because of the strain-induced direct band gap reduction. Finally, using tight-binding and FDTD simulations, we discuss the implications for highly efficient Ge lasers.
Nam, Donguk; Cheng, Szu-Lin; Roy, Arunanshu; Huang, Kevin Chih-Yao; Brongersma, Mark; Nishi, Yoshio; Saraswat, Krishna
GeV EMISSION FROM COLLISIONAL MAGNETIZED GAMMA-RAY BURSTS
Magnetic fields may play a dominant role in gamma-ray bursts, and recent observations by Fermi indicate that GeV radiation, when detected, arrives delayed by seconds from the onset of the MeV component. Motivated by this, we discuss a magnetically dominated jet model where both magnetic dissipation and nuclear collisions are important. We show that, for parameters typical of the observed bursts, such a model involving a realistic jet structure can reproduce the general features of the MeV and a separate GeV radiation component, including the time delay between the two. The model also predicts a multi-GeV neutrino component.
Meszaros, P. [Department of Astronomy and Astrophysics, Department of Physics and Center for Particle Astrophysics, 525 Davey Lab., Pennsylvania State University, University Park, PA 16802 (United States); Rees, M. J. [Institute of Astronomy, University of Cambridge, Cambridge CB3 0HA (United Kingdom)
GE power generation technology challenges for advanced gas turbines
The GE Utility ATS is a large gas turbine, derived from proven GEPG designs and integrated GEAE technology, that utilizes a new turbine cooling system and incorporates advanced materials. This system has the potential to achieve ATS objectives for a utility sized machine. Combined with use of advanced Thermal Barrier Coatings (TBC`s), the new cooling system will allow higher firing temperatures and improved cycle efficiency that represents a significant improvement over currently available machines. Developing advances in gas turbine efficiency and emissions is an ongoing process at GEPG. The third generation, ``F`` class, of utility gas turbines offers net combined cycle efficiencies in the 55% range, with NO{sub x} programs in place to reduce emissions to less than 10 ppM. The gas turbines have firing temperatures of 2350{degree}F, and pressure ratios of 15 to 1. The turbine components are cooled by air extracted from the cycle at various stages of the compressor. The heat recovery cycle is a three pressure steam system, with reheat. Throttle conditions are nominally 1400 psi and 1000{degree}F reheat. As part of GEPG`s ongoing advanced power generation system development program, it is expected that a gas fired advanced turbine system providing 300 MW power output greater than 58% net efficiency and < 10 ppM NO{sub x} will be defined. The new turbine cooling system developed with technology support from the ATS program will achieve system net efficiency levels in excess of 60%.
Cook, C.S.; Nourse, J.G.
A new class of hand-held, portable spectrometers based on large area (lcm2) CdTe detectors of thickness up to 3mm has been demonstrated to produce energy resolution of between 0.3 and 0.5% FWHM at 662 keV. The system uses a charge loss correction circuit for improved efficiency, and detector temperature stabilization to ensure consistent operation of the detector during field measurements over a wide range of ambient temperature. The system can operate continuously for up to 8hrs on rechargeable batteries. The signal output from the charge loss corrector is compatible with most analog and digital spectroscopy amplifiers and multi channel analyzers. Using a detector measuring 11.2 by 9.1 by 2.13 mm3, we have recently been able to obtain the first wide-range plutonium gamma-ray isotopic analysis with other than a cryogenically cooled germanium spectrometer. The CdTe spectrometer is capable of measuring small plutonium reference samples in about one hour, covering the range from low to high burnup. The isotopic analysis software used to obtain these results was FRAM, Version 4 from LANL. The new spectrometer is expected to be useful for low-grade assay, as well as for some in-situ plutonium gamma-ray isotopics in lieu of cryogenically cooled Ge.
Khusainov, A. K. (A. Kh.); Iwanczyk, J. S. (Jan S.); Patt, B. E. (Bradley E.); Prirogov, A. M. (Alexandre M.); Vo, Duc T.
Measurement of the Inclusive Charm Cross Section at 4.03 GeV and 4.14 GeV
The cross section for charmed meson production at $\\sqrt{s} = 4.03 $ and 4.14 GeV has been measured with the Beijing Spectrometer. The measurement was made using 22.3 $pb^{-1}$ of $e^+e^-$ data collected at 4.03 GeV and 1.5 $pb^{-1}$ of $e^+e^-$ data collected at 4.14 GeV. Inclusive observed cross sections for the production of charged and neutral D mesons and momentum spectra are presented. Observed cross sections were radiatively corrected to obtain tree level cross sections. Measurements of the total hadronic cross section are obtained from the charmed meson cross section and an extrapolation of results from below the charm threshold.
Bai, J Z; Bian, J G; Blum, I; Chen, G P; Chen, H F; Chen, J; Chen, J C; Chen, Y; Chen, Y B; Chen, Y Q; Cheng Bao Sen; Cui, X Z; Ding, H L; Dong, L Y; Du, Z Z; Dunwoodie, W M; Gao, C S; Gao, M L; Gao, S Q; Gratton, P; Gu, J H; Gu, S D; Gu, W X; Gu, Y F; Guo, Y N; Guo, Z J; Han, S W; Han, Y; Harris, F A; He, J; He, J T; He, K L; He, M; Heng, Y K; Hitlin, D G; Hu, G Y; Hu, H M; Hu, J L; Hu, Q H; Hu, T; Hu, X Q; Huang, Y Z; Huang, G S; Izen, J M; Jiang, C H; Jin, Y; Jones, B D; Ju, X; Ke, Z J; Kelsey, M H; Kim, B K; Kong, D; Lai, Y F; Lang, P F; Lankford, A; Li, C G; Li, D; Li, H B; Li, J; Li, J C; Li, P Q; Li, R B; Li, W; Li, W G; Li, X H; Li, X N; Liu, H M; Liu, J; Liu, R G; Liu, Y; Lou, X C; Lowery, B; Lu, F; Lu, J G; Luo, X L; Ma, E C; Ma, J M; Malchow, R; Mandelkern, M A; Mao, H S; Mao, Z P; Meng, X C; Nie, J; Olsen, S L; Oyang, J; Paluselli, D; Pan, L J; Panetta, J; Porter, F; Qi, N D; Qi, X R; Qian, C D; Qiu, J F; Qu, Y H; Que, Y K; Rong, G; Schernau, M; Schmid, B; Schultz, J; Shao, Y Y; Shen, B W; Shen, D L; Shen, H; Shen, X Y; Sheng, H Y; Shi, H Z; Song, X F; Standifird, J; Stoker, D; Sun, F; Sun, H S; Sun, Y; Sun, Y Z; Tang, S Q; Toki, W; Tong, G L; Varner, G S; Wang, F; Wang, L S; Wang, L Z; Wang, M; Wang, P; Wang, P L; Wang, S M; Wang, T J; Wang, Y Y; Weaver, M; Wei, C L; Wu, N; Wu, Y G; Xi, D M; Xia, X M; Xie, P P; Xie, Y; Xie, Y H; Xu, G F; Xue, S T; Yan, J; Yan, W G; Yang, C M; Yang, C Y; Yang, H X; Yang, J; Yang, W; Yang, X F; Ye, M H; Ye, S W; Ye, Y X; Yu, C S; Yu, C X; Yu, G W; Yu, Y H; Yu, Z Q; Yuan, C Z; Yuan, Y; Zhang, B Y; Zhang, C; Zhang, C C; Zhang, D H; Zhang, H L; Zhang, J; Zhang, J W; Zhang, L; Zhang, L S; Zhang, P; Zhang, Q J; Zhang, S Q; Zhang, X Y; Zhang, Y Y; Zhao, D X; Zhao, H W; Zhao, J W; Zhao, M; Zhao, W R; Zhao, Z G; Zheng, J P; Zheng, L S; Zheng, Z P; Zhou, B Q; Zhou, G P; Zhou, H S; Zhou, L; Zhu, K J; Zhu, Q M; Zhu, Y C; Zhu, Y S; Zhuang, B A
Two GeV Electrons Achieved by Laser Plasma Wakefield Acceleration | U.S.
Two GeV Electrons Achieved by Laser Plasma Wakefield Acceleration Two GeV Electrons Achieved by Laser Plasma Wakefield Acceleration High Energy Physics (HEP) HEP Home About Research Facilities Science Highlights Benefits of HEP Funding Opportunities Advisory Committees News & Resources Contact Information High Energy Physics U.S. Department of Energy SC-25/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3624 F: (301) 903-2597 E: email@example.com More Information » July 2013 Two GeV Electrons Achieved by Laser Plasma Wakefield Acceleration Scientists at University of Texas, Austin, accelerate electrons to 2 GeV in table top apparatus. Print Text Size: A A A Subscribe FeedbackShare Page Click to enlarge photo. Enlarge Photo Image courtesy of Neil Fazel The inside of the University of Texas, Austin, vacuum chamber where
859; W(A)-2012-018 859; W(A)-2012-018 ; CH-1661 GE Energy (USA) LLC (GE), requests an advance waiver of domestic and foreign patent rights for all subject inventions made under the above cooperative agreement for work entitled , "Feasibility Studies to Improve Plant Availability and Reduce Total Installed Cost in IGCC Plants". Under this agreement, GE will evaluate several factors that make the cost of implementing integrated gasification combined cycle (IGCC) power production challenging . Specifically, GE will evaluate the effects on total installed cost and availability through deployment of a multi-faceted approach in three areas: Technology Evaluation ; Constructability; and , Design methodology. The end result is to reduce the time to technologica l maturity and enable plants to reach higher
Energy Secretary Chu to Tour GE Global Research Advanced Manufacturing Lab
Tour GE Global Research Advanced Tour GE Global Research Advanced Manufacturing Lab Energy Secretary Chu to Tour GE Global Research Advanced Manufacturing Lab May 24, 2012 - 10:54am Addthis WASHINGTON - On Friday, May 25, 2012, U.S. Energy Secretary Steven Chu will visit GE Global Research in Niskayuna, New York, where he will tour the company's advanced manufacturing lab. Secretary Chu will highlight the economic opportunities in the clean energy economy as well as advanced manufacturing's potential to save American companies time and money while supporting efficient innovative product engineering and development. Following his tour, Secretary Chu will speak at Rensselaer Polytechnic Institute's Commencement Colloquy. On Saturday, May 26, Secretary Chu will participate in the university's commencement ceremonies as an
Another SunShot Success: GE to Make PrimeStar Solar Panels at New Colorado
Another SunShot Success: GE to Make PrimeStar Solar Panels at New Another SunShot Success: GE to Make PrimeStar Solar Panels at New Colorado Plant Another SunShot Success: GE to Make PrimeStar Solar Panels at New Colorado Plant October 14, 2011 - 4:03pm Addthis Thin film solar panels produced by General Electricâs PrimeStar in Arvada, Colorado | Image courtesy of Edelman. Thin film solar panels produced by General Electric's PrimeStar in Arvada, Colorado | Image courtesy of Edelman. Minh Le Minh Le Program Manager, Solar Program Yesterday, General Electric (GE) announced that it will build a new thin-film photovoltaic (PV) solar panel manufacturing facility in Aurora, Colorado, to produce highly-efficient, low-cost panels that are based on innovative technology originally developed at the Energy Department's
New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology
New GE Plant to Produce Thin Film PV Solar Panels Based on NREL New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology April 22, 2011 - 10:17am Addthis Photo courtesy of General Electric Photo courtesy of General Electric Minh Le Minh Le Program Manager, Solar Program Earlier this month, General Electric announced plans to enter the global marketplace for solar photovoltaic (PV) panels in a big way - and to do it, they will be using technology pioneered at the Department of Energy's National Renewable Energy Lab (NREL). The record-breaking Cadmium-Telluride (CdTe) thin film photovoltaic technology GE has chosen for its solar panels was originally developed more than a decade ago by a team of scientists led by NREL's Xuanzhi Wu, and
(GE) FOR AN (GE) FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN RIGHTS TO INVENTIONS MADE UNDER COOPERATIVE AGREEMENT NUMBER DE-FC04-2002AL68080, DOE WAIVER NO. W(A) 03-003. The Petitioner, GE, has requested a waiver of all domestic and foreign patent rights to inventions that may be conceived or first actually reduced to practice in the course of GE's work under Cooperative Agreement Number DE-FC04-2002AL68080 entitled "Advanced Hybrid Propulsion and Energy Management System for High Efficiency, Off- Highway, 320 Ton Class, Diesel Electric Haul Trucks." The work to be done under the cooperative agreement will be the design, fabrication and demonstration of a hybrid propulsion and energy management system for off-highway vehicles used in mining applications. The hybrid propulsion system would allow for an
181 BETWEEN GE GLOBAL AND 181 BETWEEN GE GLOBAL AND DOE; W(A)-09-016; CH-1485 The Petitioner, GE GLOBAL, has requested a waiver of domestic and certain foreign patent rights for all subject inventions that may be conceived or first actually reduced to practice by GE GLOBAL arising from its participation under the above referenced cooperative agreement entitled "300°c Capable Electronics Platform and Temperature Sensor System for Enhanced Geothermal Systems." The objective of the project is development of geothermal well bore monitoring applications, through the development of SiC based electronics and ceramic packaging capable of sustained operation at temperatures up to 300°C and 10km depth. The total cost of the project is approximately $2 million with the Petitioner
Ge-on-Si Integrated Photonics: New Tricks from an Old Semiconductor
We review recent progress in Ge active photonic devices for electronic-photonic integration on Si, demonstrating new tricks in optoelectronics from this �old� semiconductor material used for the first transistor more than ...
Jifeng, Liu
Thermal interface conductance in Si/Ge superlattices by equilibrium molecular dynamics
We provide a derivation allowing the calculation of thermal conductance at interfaces by equilibrium molecular dynamics simulations and illustrate our approach by studying thermal conduction mechanisms in Si/Ge superlattices. ...
Esfarjani, Keivan
Structural and magnetic properties of MBE grown GeMnN2 thin films
Epitaxial GeMnN{sub 2} thin films are synthesized by plasma-assisted molecular beam epitaxy. Transmission electron microscopy and x-ray diffraction measurements confirm that it is the orthorhombic variant, consistent with the predictions of first-principles calculations. The magnetic properties of the films are related to defects, with samples grown under Ge-rich conditions exhibiting a net magnetic moment above room temperature. These results are explained by first-principles calculations, indicating that the preferential substitution of one magnetic sublattice of GeMnN{sub 2} by impurities and/or intrinsic defects such as Ge antisites produces a net magnetic moment in an antiferromagnetic background, and also introduces spin-polarized carriers near the Fermi level.
Liu, Y [University of Wisconsin, Milwaukee; Lazarov, V. K. [University of Wisconsin, Milwaukee; Cheung, S.H. [University of Wisconsin, Milwaukee; Keavney, D.J. [Argonne National Laboratory (ANL); Gai, Zheng [ORNL; Gajdardziska-Josifovska, M [University of Wisconsin, Milwaukee; Weinert, M [University of Wisconsin, Milwaukee; Li, Lian [University of Wisconsin, Milwaukee
Microsoft Word - 41889_GE_IGCC Syst Study_FactSheet_012405.doc
GE Energy 1 December 2004 Project No. DE-FC26-03NT41889 System Study For Improved Gas Turbine Performance For Coal IGCC Application Fact Sheet I Project Participants: A. Prime...
e+e- pair production from 10 GeV to 10 ZeV
e + e ? Pair Production from 10 GeV to 10 ZeV Spencer R.very high energies, pair production (? ? e + e ? ) exhibitsatoms reduces the pair production cross section considerably
Klein, Spencer R.
GE, Berkeley Lab-EETD Explore Possible Key to Energy Storage...
GE, Berkeley Lab-EETD Explore Possible Key to Energy Storage for Electric Vehicles August 2013 From a General Electric press release: It's a little more complex than making instant...
Direct gap photoluminescence of n-type tensile-strained Ge-on-Si
Room temperature direct gap photoluminescence (PL) was observed from n-type tensile-strained epitaxial Ge-on-Si. The PL intensity increases with n-type doping due to a higher electron population in the direct ? valley as ...
Sun, Xiaochen
SiGe-On-Insulator (SGOI): Two Structures for CMOS Application
Two SiGe-on-insulator (SGOI) structures for CMOS application are presented: surface-channel strained-Si on SGOI (SSOI) and dual-channel SGOI structures. Comparisons between two structures are made from both device performance ...
Cheng, Zhiyuan
Optical gain and lasing from band-engineered Ge-on-Si at room temperature
We present theoretical modeling and experimental results of optical gain and lasing from tensile-strained, n[superscript +] Ge-on-Si at room temperature. Compatible with silicon CMOS, these devices are ideal for large-scale ...
High active carrier concentration in n-type, thin film Ge using delta-doping
We demonstrate CVD in situ doping of Ge by utilizing phosphorus delta-doping for the creation of a high dopant diffusion source. Multiple monolayer delta doping creates source phosphorous concentrations above 1 � 10[superscript ...
Cai, Yan
Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes
We report what we believe to be the first demonstration of direct bandgap electroluminescence (EL) from Ge/Si heterojunction light-emitting diodes (LEDs) at room temperature. In-plane biaxial tensile strain is used to ...
A market analysis for high efficiency multi-junction solar cells grown on SiGe
Applications, markets and a cost model are presented for III-V multi-junction solar cells built on compositionally graded SiGe buffer layers currently being developed by professors Steven Ringell of Ohio State University ...
Judkins, Zachara Steele
XRY{*?C**kL,x*SGH�]??�*?�*COL�yc**? �(rP�??*0Ge ...
XRY{*?C**kL,x*SGH�]??�*?�*COL�yc**? �(rP�??*0Ge<�uQIQWX?g��? �l?����)��q*?h�C??.5�H�t$?�*�!%*VT*��v*?$*�G-?*i ...
LS-35 6 GeV Light Source Storage Ring Quadrupole and Sextupole...
5 6 GeV Light Source Storage Ring Quadrupole and Sextupole Magnet Field Calculations Robert J. Lari September 23, 1985 Quadrupole Magnet Figure 1 shows the cross section of...
Design of 10 GeV laser wakefield accelerator stages with shaped laser modes
DESIGN OF 10 GEV LASER WAKEFIELD ACCELERATORSTAGES WITH SHAPED LASER MODES ? E. Cormier-Michel, E.PAL framework, of 10 GeV laser plasma wake?eld ac- celerator
Cormier-Michel, Estelle
Secretary Chu to Tour GE Global Research Advanced Secretary Chu to Tour GE Global Research Advanced Manufacturing Lab Energy Secretary Chu to Tour GE Global Research Advanced Manufacturing Lab May 24, 2012 - 10:54am Addthis WASHINGTON - On Friday, May 25, 2012, U.S. Energy Secretary Steven Chu will visit GE Global Research in Niskayuna, New York, where he will tour the company's advanced manufacturing lab. Secretary Chu will highlight the economic opportunities in the clean energy economy as well as advanced manufacturing's potential to save American companies time and money while supporting efficient innovative product engineering and development. Following his tour, Secretary Chu will speak at Rensselaer Polytechnic Institute's Commencement Colloquy. On Saturday, May 26, Secretary Chu will participate in the university's commencement ceremonies as an
Surface Termination and Roughness of Ge(100) Cleaned by HF and HCl Solutions
Oxide removal from Ge(100) surfaces treated by HCl and HF solutions with different concentrations are systematically studied by synchrotron radiation photoelectron spectroscopy (SR-PES). SR-PES results show that clean surfaces without any oxide can be obtained after wet chemical cleaning followed by vacuum annealing with a residual carbon contamination of less than 0.02 monolayer. HF etching leads to a hydrogen terminated Ge surface whose hydrogen coverage is a function of the HF concentration. In contrast, HCl etching yields a chlorine terminated surface. Possible etching mechanisms are discussed. Surface roughness after HF and HCl treatments is also investigated by AFM, which shows that HF treatment leaves a rougher surface than HCl. Germanium (Ge) is increasingly being studied for MOSFET applications to take advantage of its high intrinsic electron and hole mobility. To fabricate high performance devices on Ge, it is essential to understand Ge surface chemistry and find an effective way to clean and passivate its surface. Although Si surface cleaning and passivation have been extensively studied, only recently has some research been done on Ge surfaces. Conventional XPS results show that HF etching removes Ge oxide and carbon contamination significantly, and HCl etching leads to a chlorine terminated Ge(111) surface, which only forms Ge monochloride. However, it is difficult to probe the details of the chemical nature of treated surfaces and quantify the surface termination and cleanness with conventional XPS, because of its limited surface sensitivity and resolution. In addition, little attention has been paid to the HF concentration, which turns out to be an important factor in the surface hydrogen passivation. In this work, we study the Ge(100) surfaces treated by aqueous HCl and HF solutions with three different concentrations by synchrotron radiation photoelectron spectroscopy (SR-PES) at Stanford Synchrotron Radiation Laboratory (SSRL). Using SR-PES, we can tune the photon energy to achieve very high surface sensitivity and good resolution, so the chemical states of treated surfaces can be resolved unambiguously, and the surface termination and cleanness can be quantified. We find that HF treatment results in a hydrogen terminated surface, and the hydrogen coverage depends on the HF concentration. In contrast, a Cl terminated Ge(100) surface is achieved after HCl treatment. Both monochloride and dichloride are formed on the surface. The termination difference between HF etching and HCl etching can be explained by the etching mechanism. In both cases, the residual carbon and oxygen after chemical etching can be removed by vacuum annealing.
Sun, Shiyu; /SLAC, SSRL
Fragmentation studies of 158 A GeV Pb ions using CR39 nuclear track detectors
Six stacks of CR39 nuclear track detectors with different targets were exposed to a lead ion beam of 158 A GeV at the CERN-SPS, at normal incidence, in order to study the fragmentation properties of ultra-relativistic lead nuclei. Measurements of the total, break-up and pick-up charge-changing cross sections of 158 A GeV Pb ions have been made for the first time.
Dekhissi, H; Giorgini, M; Mandrioli, G; Manzoor, S; Patrizii, L; Popa, V; Serra, P; Togo, V
Nanostructured ion beam-modified Ge films for high capacity Li ion battery anodes
Nanostructured ion beam-modified Ge electrodes fabricated directly on Ni current collector substrates were found to exhibit excellent specific capacities during electrochemical cycling in half-cell configuration with Li metal for a wide range of cycling rates. Structural characterization revealed that the nanostructured electrodes lose porosity during cycling but maintain excellent electrical contact with the metallic current collector substrate. These results suggest that nanostructured Ge electrodes have great promise for use as high performance Li ion battery anodes.
Rudawski, N. G.; Darby, B. L.; Yates, B. R.; Jones, K. S. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400 (United States); Elliman, R. G. [Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia); Volinsky, A. A. [Department of Mechanical Engineering, University of South Florida, Tampa Florida 33620 (United States)
Distinct local electronic structure and magnetism for Mn in amorphous Si and Ge
Transition metals such as Mn generally have large local moments in covalent semiconductors due to their partially filled d shells. However, Mn magnetization in group-IV semiconductors is more complicated than often recognized. Here we report a striking crossover from a quenched Mn moment (<0.1 {mu}{sub B}) in amorphous Si (a-Si) to a large distinct local Mn moment ({ge}3{mu}{sub B}) in amorphous Ge (a-Ge) over a wide range of Mn concentrations (0.005-0.20). Corresponding differences are observed in d-shell electronic structure and the sign of the Hall effect. Density-functional-theory calculations show distinct local structures, consistent with different atomic density measured for a-Si and a-Ge, respectively, and the Mn coordination number N{sub c} is found to be the key factor. Despite the amorphous structure, Mn in a-Si is in a relatively well-defined high coordination interstitial type site with broadened d bands, low moment, and electron (n-type) carriers, while Mn in a-Ge is in a low coordination substitutional type site with large local moment and holes (p-type) carriers. Moreover, the correlation between N{sub c} and the magnitude of the local moment is essentially independent of the matrix; the local Mn moments approach zero when N{sub c} > 7 for both a-Si and a-Ge.
Zeng, Li; Cao, J. X.; Helgren, E.; Karel, J.; Arenholz, E.; Ouyang, Lu; Smith, David J.; Wu, R. Q.; Hellman, F.
One-Step Growth of Ge doped ZnO Tubes by Thermal Evaporation
In this paper we report a simple thermal evaporation technique (horizontal tube furnace) to grow the bulk-quantity of germanium (Ge) doped zinc oxide (ZnO) tubes on the Si substrate by using one-step thermal evaporation of a mixed powder of Ge and ZnO. The microstructure and optical properties of the Ge doped ZnO tubes have been investigated by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), X-ray diffraction, photoluminescence (PL) spectrometer and Raman spectrometer. The investigation of structural properties indicated that the structures consist of bulk quantities of cylindrical rod and tube with diameter around 1micron. EDX reveals that the tube structures have Ge, Zn and O{sub 2} compositions and XRD analysis indicated the product is mainly composed of Ge, zinc germanium oxide (Zn{sub 2}GeO{sub 4}) and small proportion of ZnO. Room temperature photoluminescence (PL) spectrum shows broad emission peaks around 400 nm, opening up a route to potential applications in future optoelectronic devices. Raman measurement also measured at room temperature for these tubes.
Jumidali, M. M. [School of Physics, Universiti Sains Malaysia (USM), 11800 Minden, Penang (Malaysia); Faculty of Applied Science, Universiti Teknologi MARA, 13500 Penang (Malaysia); Hashim, M. R. [School of Physics, Universiti Sains Malaysia (USM), 11800 Minden, Penang (Malaysia); Sulieman, K. M. [Faculty of Applied Science, Universiti Teknologi MARA, 13500 Penang (Malaysia)
Ferromagnetism in Mn-Implanted Epitaxially Grown Ge on Si(100)
We have studied ferromagnetism of Mn-implanted epitaxial Ge films on silicon. The Ge films were grown by ultrahigh vacuum chemical vapor deposition using a mixture of germane (GeH{sub 4}) and methylgermane (CH{sub 3}GeH{sub 3}) gases with a carbon concentration of less than 1 at. %, and observed surface rms roughness of 0.5 nm, as measured by atomic force microscopy. Manganese ions were implanted in epitaxial Ge films grown on Si (100) wafers to an effective concentration of 16, 12, 6, and 2 at. %. Superconducting quantum interference device measurements showed that only the three highest Mn concentration samples are ferromagnetic, while the fourth sample, with [Mn] = 2 at. %, is paramagnetic. X-ray absorption spectroscopy and x-ray magnetic circular dichroism measurements indicate that localized Mn moments are ferromagnetically coupled below the Curie temperature. Isothermal annealing of Mn-implanted Ge films with [Mn] = 16 at. % at 300 C for up to 1200 s decreases the magnetization but does not change the Curie temperature, suggesting that the amount of the magnetic phase slowly decreases with time at this anneal temperature. Furthermore, transmission electron microscopy and synchrotron grazing incidence x-ray diffraction experiments show that the Mn-implanted region is amorphous, and we believe that it is this phase that is responsible for the ferromagnetism. This is supported by our observation that high-temperature annealing leads to recrystallization and transformation of the material into a paramagnetic phase.
Guchhait, S.; Jamil, M.; Ohldag, H.; Mehta, A.; Arenholz, E.; Lian, G.; Li Fatou, A.; Ferrer, D. A.; Markert, J. T.; Colombo, L.; Banerjee, S. K.
Microstructure study of the rare-earth intermetallic compounds R5(SixGe1-x)4 and R5(SixGe1-x)3
The unique combination of magnetic properties and structural transitions exhibited by many members of the R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} family (R = rare earths, 0 ? x ? 1) presents numerous opportunities for these materials in advanced energy transformation applications. Past research has proven that the crystal structure and magnetic ordering of the R{sub 5(Si{sub x}Ge{sub 1-x}){sub 4} compounds can be altered by temperature, magnetic field, pressure and the Si/Ge ratio. Results of this thesis study on the crystal structure of the Er{sub 5}Si{sub 4} compound have for the first time shown that the application of mechanical forces (i.e. shear stress introduced during the mechanical grinding) can also result in a structural transition from Gd{sub 5}Si{sub 4}-type orthorhombic to Gd{sub 5}Si{sub 2}Ge{sub 2}-type monoclinic. This structural transition is reversible, moving in the opposite direction when the material is subjected to low-temperature annealing at 500 ?C. Successful future utilization of the R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} family in novel devices depends on a fundamental understanding of the structure-property interplay on the nanoscale level, which makes a complete understanding of the microstructure of this family especially important. Past scanning electron microscopy (SEM) observation has shown that nanometer-thin plates exist in every R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} (�5:4�) phase studied, independent of initial parent crystal structure and composition. A comprehensive electron microscopy study including SEM, energy dispersive spectroscopy (EDS), selected area diffraction (SAD), and high resolution transmission electron microscopy (HRTEM) of a selected complex 5:4 compound based on Er rather than Gd, (Er{sub 0.9Lu{sub 0.1}){sub 5}Si{sub 4}, has produced data supporting the assumption that all the platelet-like features present in the R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} family are hexagonal R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 3} (�5:3�) phase and possess the same reported orientation relationship that exists for the Gd{sub 5}Ge{sub 4} and Gd{sub 5}Si{sub 2}Ge{sub 2} compounds, i.e. [010](102?){sub m} || [101?0](12?11){sub p}. Additionally, the phase identification in (Er{sub 0.9}Lu{sub 0.1}){sub 5}Si{sub 4} carried out using X-ray powder diffraction (XRD) techniques revealed that the low amount of 5:3 phase is undetectable in a conventional laboratory Cu K? diffractometer due to detection limitations, but that extremely low amounts of the 5:3 phase can be detected using high resolution powder diffraction (HRPD) employing a synchrotron source. These results suggest that use of synchrotron radiation for the study of R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} compounds should be favored over conventional XRD for future investigations. The phase stability of the thin 5:3 plates in a Gd{sub 5}Ge{sub 4} sample was examined by performing long-term annealing at very high temperature. The experimental results indicate the plates are thermally unstable above 1200?C. While phase transformation of 5:3 to 5:4 occurs during the annealing, the phase transition is still fairly sluggish, being incomplete even after 24 hours annealing at this elevated temperature. Additional experiments using laser surface melting performed on the surface of a Ho{sub 5}(Si{sub 0.8}Ge{sub 0.}2){sub 4} sample showed that rapid cooling will suppress the precipitation of 5:3 plates. Bulk microstructure studies of polycrystalline and monocrystalline Gd{sub 5}Ge{sub 3} compounds examined using optical microscopy, SEM and TEM also show a series of linear features present in the Gd{sub 5}Ge{sub 3} matrix, similar in appearance in many ways to the 5:3 plates observed in R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} compounds. A systematic microscopy analysis of these linear features revealed they also are thin plates with a stoichiometric composition of Gd{sub 5}Ge{sub 4} with an orthorhombic structure. The orientation relationship between the 5:3 matrix and the precipitate 5:4 thin plates was determined as [101?0] (12?11){s
Cao, Qing
Predictions of particle size and lattice diffusion pathway requirements for sodium-ion anodes using eta-Cu6Sn5 thin films as a model system
Geometrically well-defined Cu6Sn5 thin films were used as model systems to estimate the diffusion depth and diffusion pathway requirements of Li and Na ions in alloy anodes. eta-Cu6Sn5 anodes have an initial reversible capacity towards Li of 545 mAh g-1 (Li3.96Sn or 19.8 Li/Cu6Sn5) and a very low initial irreversible capacity of 1.6 Li/Cu6Sn5. In contrast, the reaction with Na is limited with a reversible capacity of 160 mAh g-1 compared to the expected 516 mAh g-1. The potential profile is analogous to that of pure Sn with an average potential of 0.3 V. X-ray diffraction and 119Sn-M ssbauer measurements show that this limited capacity is likely resulting from the limited diffusion of Na into the anode particles not the formation of a low Na-content phase. This is substantiated by the analysis of the structure of eta-Cu6Sn5 which revealed zig-zag and tunnel diffusion pathways with spherical voids with a diameter very close to that of Na+. Moreover, our results also indicate that an alloy of eta-Cu6Sn5 should have optimized particle sizes of about 10 nm in diameter to increase the Na-capacity significantly. An alternative system consisting of a mixture of Cu6Sn5 and Sn of nominal composition Cu6Sn10 has been studied as possible Na-ion anode material possessing higher storage capacity than pure Cu6Sn5. Indeed this mixture of phase delivers a larger initial reversible storage capacity up to 400 mAh g-1. Finally, we have evidenced that the presence of Cu in Cu6Sn5 and in Cu6Sn10 suppresses the anomalous electrolyte decomposition normally measured for pure Sn at 1.2 V during discharge.
Baggetto, Loic [ORNL; Jumas, Dr. Jean-Claude [Institut Charles Gerhardt, University of Montpellier II, FRANCE; Gorka, Joanna [ORNL; Bridges, Craig A [ORNL; Veith, Gabriel M [ORNL
Circuit Breaker Maintenance; Volume 1: Low-Voltage Circuit Breakers; Part 2: GE AK Models: Volume 1: Low-Voltage Circuit Breakers Pa rt 2: GE AK Models
This comprehensive guide will help utilities improve their maintenance of GE model AK circuit breakers. It consolidates industry guidelines, applicable standards, original equipment manufacturer recommendations, and hands-on experience relative to these circuit breakers. Ultimately, improved maintenance will increase reliability and reduce costs associated with corrective maintenance and equipment downtime.
Early and late time VLT spectroscopy of SN 2001el - progenitor constraints for a type Ia supernova
We present early time high-resolution (VLT/UVES) and late time low-resolution (VLT/FORS) optical spectra of the normal type Ia supernova, SN 2001el. The high-resolution spectra were obtained at -9 and -2 days to allow the detection of narrow hydrogen and/or helium emission lines from the circumstellar medium of the SN. No such lines were detected, and we therefore use photoionisation models to derive upper limits of 9x10^-6 Msun/yr and 5x10^-5 Msun/yr for the mass loss rate from the progenitor system assuming velocities of 10 km/s and 50 km/s, respectively, for a wind extending to outside at least a few x 10^15 cm away from the SN explosion site. These limits exclude a symbiotic star in the upper mass loss rate regime from being the progenitor of SN 2001el. The low resolution spectrum was obtained in the nebular phase of the SN, 400 days after the maximum light, to search for any hydrogen rich gas originating from the SN progenitor system. However, we see no signs of Balmer lines in our spectrum. Therefore, we model the late time spectra to derive an upper limit of ~0.03 Msun for solar abundance material present at velocities lower than 1000 km/s within the SN explosion site. According to simulations of Marietta et al. (2000) this is less than the expected mass lost by a subgiant, red giant or main sequence secondary star at a small binary separation as a result of the SN explosion. Finally, we discuss the origin of high velocity Ca II lines. We see both the CaII IR triplet and the H&K lines in the -9 days spectrum at a very high velocity of up to 34000 km/s. The spectrum also shows a flat-bottomed Si II `6150 A' feature similar to the one previously observed in SN 1990N at -14 days. We compare these spectral features to those observed in SNe 1984A and 1990N at even higher velocities.
S. Mattila; P. Lundqvist; J. Sollerman; C. Kozma; E. Baron; C. Fransson; B. Leibundgut; K. Nomoto
We present early time high-resolution (VLT/UVES) and late time low-resolution (VLT/FORS) optical spectra of the normal type Ia supernova, SN 2001el. The high-resolution spectra were obtained 9 and 2 days before (B-band) maximum light in order to detect narrow hydrogen and/or helium emission lines from the SN CSM. No such lines were detected in our data. We therefore use photoionisation models to derive upper limits of 1x10^-5 and 6x10^-5 Msol/yr, assuming wind velocities of 10 and 50 km/s, respectively, for the mass loss rate from the progenitor system of SN 2001el. This excludes a symbiotic star in the upper mass loss rate regime from being the progenitor of SN 2001el. The low-resolution spectrum was obtained in the nebular phase of the supernova, \\~400 days after the maximum light, to search for any hydrogen rich gas originating from the SN progenitor system. However, we see no signs of Balmer lines in our spectrum. Therefore, we model the late time spectra to derive an upper limit of ~0.03 Msol for solar a...
Mattila, S; Sollerman, J; Kozma, C; Baron, E; Fransson, C; Leibundgut, B; Nomoto, K
Microhydration Effects on the Intermediates of the SN2 Reacation of Iodide Anion with Methyl Iodine
Reactions of halide anions with methyl halides (X- + CH3Y ? XCH3 + Y-) are bimolecular nucleophilic substitution (SN2) reactions that have been well investigated in the last few decades.[1] Figure 1 shows typical potential energy surfaces (PESs) proposed for symmetric (X- + CH3X ? XCH3 + X-) SN2 reactions along the reaction coordinate. In the gas phase, the PES has two minima corresponding to the stable X-(CH3X) complexes.[2] The PES is substantially distorted by the solvation. Since the negative charge is delocalized over the [X���CH3���X]- moiety at the transition state the stabilization energy gained by the solvation is smaller for the transition state than that for the (X- + CH3X) reactants or the X- (CH3X) complexes. In solution, a large potential barrier exists between the reactants and products. The rate constants of these reactions in protic solvents were reported to be a few orders of magnitude smaller than those in aprotic solvents; this trend was explained by the formation of solvation shells of protic molecules around the halide anions.[1,3] Morokuma has previously reported a theoretical study on the PES of the (Cl- + CH3Cl ? ClCH3 + Cl-) SN2 reaction with a few H2O molecules. The attachment of H2O molecules to the Cl-(CH3Cl) reactive system produces metastable isomers, which affect the reaction mechanism.[4] Johnson and coworkers extensively investigated the structure and reactions of halide anion complexes in the gas phase using photodissociation spectroscopy.
Doi, Keisuke; Togano, Eijiro; Xantheas, Sotiris S.; Nakanishi, Ryuzo; Nagata, Takashi; Ebata, Takayuki; Inokuchi, Yoshiya
ON ABSORPTION BY CIRCUMSTELLAR DUST, WITH THE PROGENITOR OF SN 2012aw AS A CASE STUDY
We use the progenitor of SN 2012aw to illustrate the consequences of modeling circumstellar dust using Galactic (interstellar) extinction laws that (1) ignore dust emission in the near-IR and beyond, (2) average over dust compositions, and (3) mischaracterize the optical/UV absorption by assuming that scattered photons are lost to the observer. The primary consequences for the progenitor of SN 2012aw are that both the luminosity and the absorption are significantly overestimated. In particular, the stellar luminosity is most likely in the range 10{sup 4.8} < L {sub *}/L {sub Sun} < 10{sup 5.0} and the star was not extremely massive for a Type IIP progenitor, with M {sub *} < 15 M {sub Sun }. Given the properties of the circumstellar dust and the early X-ray/radio detections of SN 2012aw, the star was probably obscured by an ongoing wind with M-dot {approx}10{sup -5.5} to 10{sup -5.0} M {sub Sun} yr{sup -1} at the time of the explosion, roughly consistent with the expected mass-loss rates for a star of its temperature (T{sub *} {approx_equal} 3600{sup +300} {sub -200} K) and luminosity. In the spirit of Galactic extinction laws, we supply simple interpolation formulae for circumstellar extinction by dusty graphitic and silicate shells as a function of wavelength ({lambda} {>=} 0.3 {mu}m) and total (absorption plus scattering) V-band optical depth ({tau}{sub V} {<=} 20). These do not include the contributions of dust emission, but provide a simple, physical alternative to incorrectly using interstellar extinction laws.
Kochanek, C. S.; Khan, R. [Department of Astronomy, Ohio State University, 140 West 18th Avenue, Columbus, OH 43210 (United States); Dai, X. [Department of Physics and Astronomy, University of Oklahoma, 440 W. Brooks Street, Norman, OK 73019 (United States)
Workshop on effects of chromium coating on Nb{sub 3}Sn superconductor strand: Proceedings
This report discusses the following topics: Chromium coating on superconductor strand -- an overview; technology of chromium plating; comparison of wires plated by different platers; search for chromium in copper; strand manufactures` presentations; chromium plating at the Lawrence Livermore National Laboratory; a first look at a chromium plating process development project tailored for T.P.X. and I.T.E.R. strand; and influence of chromium diffusion and related phenomena on the reference ratios of bare and chromium plated Nb{sub 3}Sn strand.
ITER Model Coil Tests Overview: Nb3Sn Strand Properties in Cable-in-Conduit-Conductors
During the ITER Model Coil Program two large coils and three Insert coils were built and tested. The test campaigns provided very valuable data on the Conductor in Conduit Cable (CICC) properties. The tests showed that the Nb3Sn strands in CICC behave differently than so-called witness strands, which underwent the same heat treatment. The paper describes Volt-temperature characteristics (VTC) and Volt-Ampere characteristics (VAC) measured in the tests, presents comparisons with the witness strands, and interprets the test results.
Martovetsky, N N
Structural and electronic studies of a-SiGe:H alloys
This report describes work to produce alloys of a-Si[sub 1-x]Ge[sub x]:H of improved photoelectronic quality by plasma-enhanced chemical vapor deposition (PECVD). The goal was to discover optimum preparation conditions for the end-component, a-Ge:H, to establish whether modification of the usual practice of starting from a-Si:H preparation conditions was advisable. Such modification, found to be necessary, gave films of a-Ge:H with efficiency-mobility-lifetime products ([eta][mu][tau]) 10[sup 2] to 10[sup 3] higher than were earlier available, in homogeneous environmentally stable material. Both a-Ge:H and a-Si[sub 1-x]Ge[sub x]:H of large x were studied in detail. Alloy material was shown to have [eta][mu][tau] 10[sup 2] larger than found earlier. However, just as the [eta][mu][tau] of a-Si:H decreases when Ge is added, so also the [eta][mu][tau] of these alloys with Si addition. By contrast, the ambipolar diffusion lengths, L[sub o] which are governed by the hole mobility, vary by only a factor of two over the whole alloy series. Using the experimental finding of a small valence band offset between a-Si:H and a-Ge:H compositional fluctuations on a 10-mm scale are suggested to explain the behavior of [eta][mu][tau] and L[sub o] The implications for eventual improvement of the alloys are profound, but require direct experimental tests of the postulated compositional fluctuations.
Paul, W. (Harvard Univ., Cambridge, MA (United States))
Alkaline earth lead and tin compounds Ae2Pb, Ae2Sn, Ae=Ca,Sr,Ba, as thermoelectric materials
We present a detailed theoretical study of three alkaline earth compounds Ca2Pb, Sr2Pb and Ba2Pb, which have undergone little previous study, calculating electronic band structures and Boltzmann transport and bulk moduli using density functional theory. We also study the corresponding tin compounds Ca2 Sn, Sr2 Sn and Ba2 Sn. We find that these are all narrow band gap semiconductors with an electronic structure favorable for thermoelectric performance, with substantial thermopowers for the lead compounds at temperature ranges from 300 to 800 K. For the lead compounds, we further find very low calculated bulk moduli - roughly half of the values for the lead chalcogenides, suggestive of soft phonons and hence low lattice thermal conductivity. All these facts indicate that these materials merit experimental investigation as potential high performance thermoelectrics. We find good potential for thermoelectric performance in the environmentally friendly stannide materials, particularly at high temperature.
Parker, David S [ORNL; Singh, David J [ORNL
SnO{sub 2}/ZnO composite structure for the lithium-ion battery electrode
In this article, SnO{sub 2}/ZnO composite structures have been synthesized by two steps hydrothermal method and investigated their lithium storage capacity as compared with pure ZnO. It has been found that these composite structures combining the large specific surface area, stability and catalytic activity of SnO{sub 2} micro-crystals, demonstrate the higher initial discharge capacity of 1540 mA h g{sup -1} with a Coulombic efficiency of 68% at a rate of 120 mA h g{sup -1} between 0.02 and 2 V and found much better than that of any previously reported ZnO based composite anodes. In addition, a significantly enhanced cycling performance, i.e., a reversible capacity of 497 mA h g{sup -1} is retained after 40 cycles. The improved lithium storage capacity and cycle life is attributed to the addition of SnO{sub 2} structure, which act as good electronic conductors and better accommodation of the large volume change during lithiation/delithiation process. - Graphical abstract: SnO{sub 2}/ZnO composite structures demonstrate the improved lithium storage capacity and cycle life as compared with pure ZnO nanostructure. Highlights: Black-Right-Pointing-Pointer Synthesis of SnO{sub 2}/ZnO composite structures by two steps hydrothermal approach. Black-Right-Pointing-Pointer Investigation of lithium storage capacity. Black-Right-Pointing-Pointer Excellent lithium storage capacity and cycle life of SnO{sub 2}/ZnO composite structures.
Ahmad, Mashkoor, E-mail: firstname.lastname@example.com [Beijing National Center for Electron Microscopy, The State Key Laboratory of New Ceramics and Fine Processing, Laboratory of Advanced Material, China Iron and Steel Research Institute Group, Department of Material Science and Engineering, Tsinghua University, Beijing 100084 (China) [Beijing National Center for Electron Microscopy, The State Key Laboratory of New Ceramics and Fine Processing, Laboratory of Advanced Material, China Iron and Steel Research Institute Group, Department of Material Science and Engineering, Tsinghua University, Beijing 100084 (China); Nanomaterial Research Group, Physics Division, PINSTECH, P.O. Nilore, Islamabad (Pakistan); Yingying, Shi [Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)] [Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Sun, Hongyu [Beijing National Center for Electron Microscopy, The State Key Laboratory of New Ceramics and Fine Processing, Laboratory of Advanced Material, China Iron and Steel Research Institute Group, Department of Material Science and Engineering, Tsinghua University, Beijing 100084 (China)] [Beijing National Center for Electron Microscopy, The State Key Laboratory of New Ceramics and Fine Processing, Laboratory of Advanced Material, China Iron and Steel Research Institute Group, Department of Material Science and Engineering, Tsinghua University, Beijing 100084 (China); Shen, Wanci [Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)] [Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Zhu, Jing, E-mail: email@example.com [Beijing National Center for Electron Microscopy, The State Key Laboratory of New Ceramics and Fine Processing, Laboratory of Advanced Material, China Iron and Steel Research Institute Group, Department of Material Science and Engineering, Tsinghua University, Beijing 100084 (China)] [Beijing National Center for Electron Microscopy, The State Key Laboratory of New Ceramics and Fine Processing, Laboratory of Advanced Material, China Iron and Steel Research Institute Group, Department of Material Science and Engineering, Tsinghua University, Beijing 100084 (China)
Structural disorder and magnetism in rare-earth (R) R117Co54+xSn112 +/- y
The cubic R117Co54+xSn112�y compounds (R = La�Lu, except Pm, Eu, and Yb) have been synthesized and characterized using X-ray diffraction and magnetization measurements. The existence of the compounds with R = Ce, Pr, Sm, Gd, Tb, and Dy has been confirmed, while new compounds with R = Y, La, Nd, Ho, Er, Tm, and Lu have been discovered. All of the studied phases adopt the Dy117Co57Sn112-type crystal structures with a giant cubic cell (a ? 30 �) when the proper heat treatment regime was selected. The lattice parameter decreases from La to Lu, in accordance with the lanthanide contraction and indicating the trivalent state for Ce in Ce117Co54.5Sn115.2. The Co/Sn compositional ratio increases when the size of the R atoms decreases. A single crystal investigation of Gd117Co56.4Sn114.3 confirms extensive structural disorder, particularly around the (1/2, 1/2, 1/2) location of the unit cell (4b site). Such disorder leads to an elongation of the thermal ellipsoids for the atoms surrounding this location. The magnetic measurements of the compounds with R = Ce, Gd and Tb indicate weak magnetic interactions and non-collinear alignment of magnetic moments in the ordered state. The electrical resistivity of Gd117Co56.4Sn114.3 shows interesting behavior with a change of sign at TC for the d?/dT parameter.
Mudryk, Y. [Ames Laboratory; Manfrinetti, P. [University of Genova; Smetana, V. [Ames Laboratory; Liu, J. [Ames Laboratory; Fornasini, M. L. [University of Genova; Provino, A. [University of Genova; Pecharsky, V. K. [University of Genova; Miller, Gordon J. [Ames Laboratory; Gschneidner Jr., Karl A. [Ames Laboratory
Investigations of the R5(SixGe1-x)4 Intermetallic Compounds by X-Ray Resonant Magnetic Scattering
The XRMS experiment on the Gd{sub 5}Ge{sub 4} system has shown that, below the Neel temperature, T{sub N} = 127 K, the magnetic unit cells is the same as the chemical unit cell. From azimuth scans and the Q dependence of the magnetic scattering, all three Gd sites in the structure were determined to be in the same magnetic space group Pnma. The magnetic moments are aligned along the c-axis and the c-components of the magnetic moments at the three different sites are equal. The ferromagnetic slabs are stacked antiferromagnetically along the b-direction. They found an unusual order parameter curve in Gd{sub 5}Ge{sub 4}. A spin-reorientation transition is a possibility in Gd{sub 5}Ge{sub 4}, which is similar to the Tb{sub 5}Ge{sub 4} case. Tb{sub 5}Ge{sub 4} possesses the same Sm{sub 5}Ge{sub 4}-type crystallographic structure and the same magnetic space group as Gd{sub 5}Ge{sub 4} does. The difference in magnetic structure is that Tb{sub 5}Ge{sub 4} has a canted one but Gd{sub 5}Ge{sub 4} has nearly a collinear one in the low temperature antiferromagnetic phase. The competition between the magneto-crystalline anisotropy and the nearest-neighbor magnetic exchange interactions may allow a 3-dimensional canted antiferromagnetic structure in Tb{sub 5}Ge{sub 4}. The spin-reorientation transition in both Gd{sub 5}Ge{sub 4} and Tb{sub 5}Ge{sub 4} may arise from the competition between the magnetic anisotropy from the spin-orbit coupling of the conduction electrons and the dipolar interactions anisotropy.
Lizhi Tan
Epitaxial growth of Dy2O3 thin films on epitaxial Dy-germanide films on Ge(001) substrates
Ultra-thin films of Dy are grown on Ge(001) substrates by molecular beam deposition near room temperature and immediately annealed for solid phase epitaxy at higher temperatures, leading to the formation of DyGe"x films. Thin films of Dy"2O"3 are grown ... Keywords: Dy2O3 film, Ge(001) substrate, High-? oxide, Molecular beam epitaxy (MBE), Structural characterization, Transmission electron microscopy (TEM)
Md. Nurul Kabir Bhuiyan; Mariela Menghini; Jin Won Seo; Jean-Pierre Locquet
Tin (Sn)
...Tin phase Interatomic distance, nm Number of neighbors α tin 0.279 4 0.456 8 β tin 0.302 4 0.318 2 0.376 4 Liquid tin (250 °C) 0.338 10 Source: Ref 433...
Electronic structure of fully epitaxial Co2TiSn thin films
In this article we report on the properties of thin films of the full Heusler compound Co{sub 2}TiSn prepared by DC magnetron co-sputtering. Fully epitaxial, stoichiometric films were obtained by deposition on MgO (001) substrates at substrate temperatures above 600 C. The films are well ordered in the L2{sub 1} structure, and the Curie temperature exceeds slightly the bulk value. They show a significant, isotropic magnetoresistance and the resistivity becomes strongly anomalous in the paramagnetic state. The films are weakly ferrimagnetic, with nearly 1 {mu}{sub B} on the Co atoms, and a small antiparallel Ti moment, in agreement with theoretical expectations. From comparison of x-ray absorption spectra on the Co L{sub 3,2} edges, including circular and linear magnetic dichroism, with ab initio calculations of the x-ray absorption and circular dichroism spectra we infer that the electronic structure of Co{sub 2}TiSn has essentially non-localized character. Spectral features that have not been explained in detail before, are explained here in terms of the final state band structure.
Meinert, Markus; Schmalhorst, Jan; Wulfmeier, Hendrik; Reiss, Gunter; Arenholz, Elke; Graf, Tanja; Felser, Claudia
TiNiSn: A gateway to the (1,1,1) intermetallic compounds
Recent awareness of the transport properties of Skutterudite pnictides has stimulated an interest in numerous other intermetallic compounds having a gap in the density of states at the Fermi level including the MNiSn compounds where M = (Ti, Zr, Hf). These intermetallic half-Heusler compounds are characterized by high Seebeck coefficients ({minus}150 to {minus}300 {micro}V/deg.) and reasonable carrier mobilities (30 to 50 cm{sup 2}/V-s) at room temperature which make them attractive candidates for intermediate temperature thermoelectric applications. Samples of TiNiSn were prepared by arc melting and homogenized by heat treatment. The temperature dependence of the electrical resistivity, Seebeck coefficient, and thermal diffusivity of these samples was characterized between 22 C and 900 C. The electrical resistivity and thermopower both decrease with temperature although the resistivity decreases at a faster rate. Electrical power factors in excess of 25 {micro}W/cm-C{sup 2} were observed in nearly single phase alloys within a 300 to 600 C temperature range. A brief survey of other selected ternary intermetallic compounds is also presented.
Cook, B.A.; Harringa, J.L. [Ames Lab., IA (United States); Tan, Z.S.; Jesser, W.A. [Univ. of Virginia, Charlottesville, VA (United States). Dept. of Materials Science and Engineering
ON THE NATURE OF THE PROGENITOR OF THE Type Ia SN2011fe IN M101
The explosion of a Type Ia supernova, SN2011fe, in the nearby Pinwheel galaxy (M101 at 6.4 Mpc) provides an opportunity to study pre-explosion images and search for the progenitor, which should consist of a white dwarf (WD), possibly surrounded by an accretion disk, in orbit with another star. We report on our use of deep Chandra observations and Hubble Space Telescope observations to limit the luminosity and temperature of the pre-explosion WD. It is found that if the spectrum was a blackbody, then pre-SN WDs with steady nuclear burning of the highest possible temperatures and luminosities are excluded assuming moderate n{sub H} values, but values of kT between roughly 10 eV and 60 eV are permitted even if the WD was emitting at the Eddington luminosity. This allows the progenitor to be an accreting nuclear-burning WD with an expanded photosphere 4-100 times the WD itself, or a super-critically accreting WD blowing off an optically thick strong wind, or possibly a recurrent nova with luminosities an order of magnitude lower than Eddington. The observations are also consistent with a double degenerate scenario, or a spinning down WD that has been spun up by accretion from the donor.
Liu Jifeng [National Astronomical Observatory of China, Beijing 100012 (China); Di Stefano, Rosanne; Wang Tao; Moe, Maxwell [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States)
Design of a Nb3Sn Magnet for a 4th Generation ECR Ion Source
The next generation of Electron Cyclotron Resonant (ECR) ion sources are expected to operate at a heating radio frequency greater than 40 GHz. The existing 3rd generation systems, exemplified by the state of the art system VENUS, operate in the 10-28 GHz range, and use NbTi superconductors for the confinement coils. The magnetic field needed to confine the plasma scales with the rf frequency, resulting in peak fields on the magnets of the 4th generation system in excess of 10 T. High field superconductors such as Nb{sub 3}Sn must therefore be considered. The magnetic design of a 4th. generation ECR ion source operating at an rf frequency of 56 GHz is considered. The analysis considers both internal and external sextupole configurations, assuming commercially available Nb{sub 3}Sn material properties. Preliminary structural design issues are discussed based on the forces and margins associated with the coils in the different configurations, leading to quantitative data for the determination of a final magnet design.
Prestemon, S,; Trillaud, F.; Caspi, S.; Ferracin, P.; Sabbi, G. L.; Lyneis, C. M.; Leitner, D.; Todd, D. S.; Hafalia, R.
Structure and Stability of SnO2 Nanocrystals and Surface-Bound
ABSTRACT: The structure of SnO2 nanoparticles (avg. 5 nm) with a few layers of water on the surface has been elucidated by atomic pair distribution function (PDF) methods using in situ neutron total scattering data and molecular dynamics (MD) simulations. Analysis of PDF, neutron prompt gamma, and thermogravimetric data, coupled with MD-generated surface D2O/OD configurations demonstrates that the minimum concentration of OD groups required to prevent rapid growth of nanoparticles during thermal dehydration corresponds to 0.7 monolayer coverage. Surface hydration layers not only stabilize the SnO2 nanoparticles but also induce particle-size-dependent structural modifications and are likely to promote interfacial reactions through hydrogen bonds between adjacent particles. Upon heating/dehydration under vacuum above 250 C, nanoparticles start to grow with low activation energies, rapid increase of nanoparticle size, and a reduction in the a lattice dimension. This study underscores the value of neutron diffraction and prompt-gamma analysis, coupled with molecular modeling, in elucidating the influence of surface hydration on the structure and metastable persistence of oxide nanomaterials.
Wang, Hsiu-Wen [ORNL; Wesolowski, David J [ORNL; Proffen, Thomas E [ORNL; Vlcek, Lukas [ORNL; Wang, Wei [ORNL; Allard Jr, Lawrence Frederick [ORNL; Kolesnikov, Alexander I [ORNL; Feygenson, Mikhail [ORNL; Anovitz, Lawrence {Larry} M [ORNL; Paul, Dr. Rick L. [National Institute of Standards and Technology (NIST), Gaithersburg, MD
Light cluster production in E/A = 61 MeV 36Ar + 112,124Sn reactions
Experimental kinetic energy distributions and small-angle two-particle correlation functions involving deuterons and tritons are compared for 36Ar+ 112,124Sn collisions at E/A = 61 MeV (i.e. for systems similar in size, but with different isospin content). A larger triton yield is observed from the more neutron-rich system, as predicted by IBUU simulations, while the emission times of the light clusters are found to be the same for the two Sn-target systems. For both systems, the time sequence tau_{d} < tau_{p} < tau_{t}, is deduced for charged particles emitted from the intermediate velocity source.
R. Ghetti; J. Helgesson; V. Avdeichikov; B. Jakobsson; N. Colonna; G. Tagliente; H. W. Wilschut; V. L. Kravchuk
Ethanol Sensitivity of Cu{sub 1-x}Sn{sub x}O(x = 0.00, 0.03, and 0.05) Nanoflakes
Cu{sub 1-x}Sn{sub x}O(x = 0.00, 0.03, and 0.05) nanoflakes were synthesized by a simple wet chemical method and X-Ray diffraction (XRD) result confirms the monoclinic structure of CuO with no secondary phases due to Sn doping. The scanning electron microscopic images indicate the formation of nanoflakes. The fundamental Raman modes were observed at 273, 318, 610, and 1084 cm{sup -1} for undoped CuO sample and theses modes were slightly shifted towards lower frequency side for Sn-doped samples, which indicates the inclusion of Sn in CuO. In addition, XRD and Raman studies infer the decrease of crystallinity in doped samples, which is reflected in the sensitivity towards ethanol. The ethanol sensitivity (resistivity measurement) increases with ethanol gas concentration and decreases with Sn-doping in CuO nanoflakes.
Mariammal, R. N.; Ramachandran, K. [School of Physics, Madurai Kamaraj University, Madurai-21 (India)
6 GeV LIGHT SOURCE PROJECT COST ESTIMATING PROCEDURE LS-34
GeV LIGHT SOURCE PROJECT GeV LIGHT SOURCE PROJECT COST ESTIMATING PROCEDURE LS-34 October 23, 1985 YC/AVR To maintain uniformity in estimating the cost requirements of the various components of the 6 GeV Light Source, the following procedure will be used by all the task groups. The procedure uses a Work Breakdown Structure (WBS) to break down the project into manageable, easy to estimate, components. The project is first broken down into major tasks or categories. Then each major division is continuously subdivided until the desired level of detail is achieved. This can be shown best by using the example of the WBS of the Aladdin Upgrade Project, excerpts of which are included in Appendix A. As shown in the example, the project is first divided into: 1.1 Project Management and Administration
The Linac Injector For The ANL 7 Ge V Advanced Photon Source
Injector For The ANL 7 Ge V Injector For The ANL 7 Ge V Advanced Photon Source A. Nassiri, W. Wesolowski, and G. Mavrogenes Argonne National Laboratory Submitted to the 1990 LINAC Conferece Albuquerque, New Mexico LS-154 9/28/90 TEE LINAC INJECTOR FOR TEE ANL 7 G<.iJ,V ADVANCED PHOTON SOORCE* A. Nassiri, W. Wesolowski, and G. Mavrogenes Argonne National Laboratory 9700 South Cass Avenue Argonne, IL 60439 USA Abstract The Argonne Advanced Photon Source (APS) linac system consists of a 200 MeV electron linac, a positron converter, and a 450 MeV positron linac. Design parameters and computer simulations of the two linac systems are presented. Introduction The Argonne Advanced Photon Source is a 7 GeV synchrotron X-Ray facility. The APS machine parameters have been described.
RESEARCH, INC (GE) FOR AN RESEARCH, INC (GE) FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN PATENT RIGHTS UNDER DOE AWARD NO. DE-EE0005344; W(A) 2011-072 GE has requested a waiver of domestic and foreign patent rights of the United States of America in all subject inventions arising from its participation under the above referenced cooperative agreement entitled "Module Embedded Microinverter Smart Grid Ready Residential Solar Electric System." The cooperative agreement was made under the Solar Energy Grid Integration Systems - Advanced Concepts (SEGIS-AC) Funding Opportunity Announcement (DE-FOA-0000479). The objectives of SEGIS-AC are to support the development and demonstration of technologies in power electronics that reduce the overall PV system costs, allow high penetrations of solar
0 0 STATEMENT OF CONSIDERATIONS REQUEST BY THE GE CORPORATE RESEARCH AND DEVELOPMENT (GE) FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN PATENT RIGHTS UNDER DOE COOPERATIVE AGREEMENT NO. DE- FC07-011D14093; W(A)-01-031; CH-1078 The Petitioner, GE, has requested a waiver of domestic and foreign patent rights for all subject inventions arising from its participation under the above referenced cooperative agreement entitled "Microanalysis Techniques for Accelerated Characterization of Polymer Properties." This waiver will not impact the rights of those parties subject to Public Law 96-517, as amended, nor shall it grant any rights in inventions made by employees of the National Laboratories. The objective of the cooperative agreement is to develop techniques and
Microsoft Word - DOE-ID-13-005 GE Hitachi EC B3-6.doc
5 5 SECTION A. Project Title: Next Generation Electromagnetic Pump: Analysis Tools and Insulation Materials Development - GE Hitachi Nuclear Energy Americas LLC SECTION B. Project Description GE Hitachi, teaming with Argonne National Laboratory, proposes to improve electromagnetic (EM) pump analysis model and EM design and analysis tools for next-generation EM pumps. Additionally, GE Hitachi proposes to develop, produce, and evaluate samples of new pump insulation materials. SECTION C. Environmental Aspects / Potential Sources of Impact Chemical Use/Storage - Mica flake, ceramic fibers, glass fibers, and ceramic binders will be used. Chemical Waste Disposal - Approximately 1 lb of mica flake, 1 lb of ceramic fibers, 1 lb of glass fibers, and 20 lbs of ceramic binders
Suzanne G.E. te Velthuis - Argonne National Laboratories, Materials Sicence
Hybrid model of GeV-TeV gamma ray emission from Galactic Center
The observations of high energy $\\gamma$-ray emission from the Galactic center (GC) by HESS, and recently by Fermi, suggest the cosmic ray acceleration in the GC and possibly around the supermassive black hole. In this work we propose a lepton-hadron hybrid model to explain simultaneously the GeV-TeV $\\gamma$-ray emission. Both electrons and hadronic cosmic rays were accelerated during the past activity of the GC. Then these particles would diffuse outwards and interact with the interstellar gas and background radiation field. The collisions between hadronic cosmic rays with gas is responsible to the TeV $\\gamma$-ray emission detected by HESS. With fast cooling in the strong radiation field, the electrons would cool down and radiate GeV photons through inverse Compton scattering off the soft background photons. This scenario provides a natural explanation of the observed GeV-TeV spectral shape of $\\gamma$-rays.
Yi-Qing Guo; Qiang Yuan; Cheng Liu; Ai-Feng Li
Options for an 11 GeV RF Beam Separator for the Jefferson Lab CEBAF Upgrade
The CEBAF accelerator at Jefferson Lab has had, since first demonstration in 1996, the ability to deliver a 5-pass electron beam to experimental halls (A, B, and C) simultaneously. This capability was provided by a set of three, room temperature 499 MHz rf separators in the 5th pass beamline. The separator was two-rod, TEM mode type resonator, which has a high shunt impedance. The maximum rf power to deflect the 6 GeV beams was about 3.4kW. The 12 GeV baseline design does not preserve the capability of separating the 5th pass, 11 GeV beam for the 3 existing halls. Several options for restoring this capability, including extension of the present room temperature system or a new superconducting design in combination with magnetic systems, are under investigation and are presented.
Jean Delayen, Michael Spata, Haipeng Wang
MaGe - a Geant4-based Monte Carlo framework for low-background experiments
A Monte Carlo framework, MaGe, has been developed based on the Geant4 simulation toolkit. Its purpose is to simulate physics processes in low-energy and low-background radiation detectors, specifically for the Majorana and Gerda $^{76}$Ge neutrinoless double-beta decay experiments. This jointly-developed tool is also used to verify the simulation of physics processes relevant to other low-background experiments in Geant4. The MaGe framework contains simulations of prototype experiments and test stands, and is easily extended to incorporate new geometries and configurations while still using the same verified physics processes, tunings, and code framework. This reduces duplication of efforts and improves the robustness of and confidence in the simulation output.
Yuen-Dat Chan; Jason A. Detwiler; Reyco Henning; Victor M. Gehman; Rob A. Johnson; David V. Jordan; Kareem Kazkaz; Markus Knapp; Kevin Kroninger; Daniel Lenz; Jing Liu; Xiang Liu; Michael G. Marino; Akbar Mokhtarani; Luciano Pandola; Alexis G. Schubert; Claudia Tomei
New Measurement of the Cosmic-Ray Positron Fraction from 5 to 15 GeV
We present a new measurement of the cosmic-ray positron fraction at energies between 5 and 15 GeV with the balloon-borne HEAT-pbar instrument in the spring of 2000. The data presented here are compatible with our previous measurements, obtained with a different instrument. The combined data from the three HEAT flights indicate a small positron flux of non-standard origin above 5 GeV. We compare the new measurement with earlier data obtained with the HEAT-e+- instrument, during the opposite epoch of the solar cycle, and conclude that our measurements do not support predictions of charge sign dependent solar modulation of the positron abundance at 5 GeV.
J. J. Beatty; A. Bhattacharyya; C. Bower; S. Coutu; M. A. DuVernois; S. McKee; S. A. Minnick; D. Muller; J. Musser; S. Nutter; A. W. Labrador; M. Schubnell; S. Swordy; G. Tarle; A. Tomasch
5-10 GeV Neutrinos from Gamma-Ray Burst Fireballs
A gamma-ray burst fireball is likely to contain an admixture of neutrons, in addition to protons, in essentially all progenitor scenarios. Inelastic collisions between differentially streaming protons and neutrons in the fireball produce muon neutrinos (antineutrinos) of ~ 10 GeV as well as electron neutrinos (antineutrinos) of ~ 5 GeV, which could produce ~ 7 events/year in kilometer cube detectors, if the neutron abundance is comparable to that of protons. Photons of ~ 10 GeV from pi-zero decay and ~ 100 MeV electron antineutrinos from neutron decay are also produced, but will be difficult to detect. Photons with energies < 1 MeV from shocks following neutron decay produce a characteristic signal which may be distinguishable from the proton-related MeV photons.
John N. Bahcall; Peter Meszaros
Mechanism of the Initial Oxidation of Hydrogen andHalogen Terminated Ge(111) Surfaces in Air
The initial stage of the oxidation of Ge(111) surfaces etched by HF, HCl and HBr solutions is systematically studied using synchrotron radiation photoelectron spectroscopy (SR-PES). We perform controlled experiments to differentiate the effects of different oxidation factors. SR-PES results show that both moisture and oxygen contribute to the oxidation of the surfaces; however, they play different roles in the oxidation process. Moisture effectively replaces the hydrogen and halogen termination layers with hydroxyl (OH), but hardly oxidizes the surfaces further. On the other hand, dry oxygen does not replace the termination layers, but breaks the Ge-Ge back bonds and oxidizes the substrates with the aid of moisture. In addition, room light enhances the oxidation rate significantly.
Sun, Shiyu; /Stanford U., Phys. Dept.; Sun, Yun; Liu, Zhi; Lee, Dong-Ick; Pianetta, Piero; /SLAC, SSRL
Crystallization Times of Ge-Te Phase Change Materials as a Function of Composition
The crystallization times of Ge-Te phase change materials with variable Ge concentrations (29.5-72.4 at. %) were studied. A very strong dependence of the crystallization time on the composition for as-deposited, amorphous films was confirmed, with a minimum for the stoichiometric composition GeTe. The dependence is weaker for melt-quenched, amorphous material and crystallization times are between one to almost four orders of magnitude shorter than for as-deposited materials. This is promising for applications because recrystallization from the melt-quenched phase is the relevant process for optical and solid state memory, and fast crystallization and weak dependence on compositional variations are desirable.
S Raoux; H Cheng; M Caldwell; H Wong
Cubic Form of Pb[subscript 2?x]Sn[subscript x]S[subscript 2] Stabilized through Size Reduction to the Nanoscale
We demonstrate the synthesis of semiconductor Pb{sub 2-x}Sn{sub x}S{sub 2} nanocrystals with a cubic rock salt crystal structure in a composition range where this structure is unstable in the bulk. The cubic Pb{sub 2-x}Sn{sub x}S{sub 2} nanocrystals were prepared using a modified hot injection colloidal synthetic route. The x value is in the range 0.40 SnS phase diagram where no single phase exists, and despite the fact that PbSnS{sub 2} is a distorted orthorhombic phase, the Pb{sub 2-x}Sn{sub x}S{sub 2} nanocrystals are single phase solid solutions with cubic NaCl-type structure. Experimental evidence for this derives from powder X-ray diffraction (PXRD), electron diffraction, and pair distribution function (PDF) analysis. Elemental compositions determined using scanning transmission electron microscopy/energy dispersive spectroscopy (STEM/EDS), inductively coupled plasma-atomic emission spectroscopy (ICP-AES), and electron energy loss spectroscopy (EELS) reveal a composition close to the nominal ones. The band gaps of the Pb{sub 2-x}Sn{sub x}S{sub 2} nanocrystals (0.52-0.57 eV) are blue-shifted by quantum confinement relative to that of the hypothetical cubic PbSnS2 phase which density functional theory (DFT) calculations show to be much narrower (0.2 eV) than in the case of orthorhombic PbSnS{sub 2} (1.1 eV). The Pb{sub 2-x}Sn{sub x}S{sub 2} nanocrystals exhibit a well-defined band gap in the near-IR region and are stable up to 300 C above which they phase separate into cubic PbS and orthorhombic {alpha}-SnS.
Soriano, Ronald B.; Malliakas, Christos D.; Wu, Jinsong; Kanatzidis, Mercouri G. (NWU)
Method for preparing high transition temperature Nb/sub 3/Ge superconductors. [Patent application
Bulk coatings of Nb/sub 3/Ge superconductors having transition temperatures in excess of 20/sup 0/K are readily formed by a chemical vapor deposition technique involving the coreduction of NbCl/sub 5/ and GeCl/sub 4/ in the presence of hydrogen. The NbCl/sub 5/ vapor may advantageously be formed quantitatively in the temperature range of about 250 to 260/sup 0/C by the chlorination of Nb metal provided the partial pressure of the product NbCl/sub 5/ vapor is maintained at or below about 0.1 atm.
Newkirk, L.R.; Valencia, F.A.
PHENIX Direct Photons in 200 GeV p+p and Au+Au Collisions
We present the first positive direct photon results in Au+Au at sqrt{s_NN} = 200 GeV along with initial p+p results at the same energy. The p+p result is found to be consistent with NLO perturbative QCD predictions within its large uncertainties. In central Au+Au collisions, an excess over expected background as large as 200-300% is observed from p_T = 4-12 GeV/c. This large signal is shown to be consistent with the scaled pQCD photon prediction, together with suppression of meson background sources.
Justin Frantz
Method for preparing high transition temperature Nb.sub.3 Ge superconductors
Bulk coatings of Nb.sub.3 Ge superconductors having transition temperatures in excess of 20 K are readily formed by a chemical vapor deposition technique involving the coreduction of NbCl.sub.5 and GeCl.sub.4 in the presence of hydrogen. The NbCl.sub.5 vapor may advantageously be formed quantitatively in the temperature range of about 250.degree. to 260.degree. C by the chlorination of Nb metal provided the partial pressure of the product NbCl.sub.5 vapor is maintained at or below about 0.1 atm.
Newkirk, Lawrence R. (Los Alamos, NM); Valencia, Flavio A. (Santa Fe, NM)
Blue Emission Peak of GeO{sub 2} Particles Grown Using Thermal Evaporation
In this paper we report a simple thermal evaporation technique (horizontal tube furnace) to grow large quantities of GeO{sub 2} particles with diameters ranging from tens of nanometer to 500 nm on n-type (100) Si substrate free of catalyst. The particles were grown at temperature about 1000 degree sign C for 2 hrs and characterized by scanning electron microscopy (SEM), X-Ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX) and photoluminescence (PL) spectroscopy. The photoluminescence spectrum reveals several emission peaks around 400 nm at room temperature. Raman measurement also measured at room temperature for this GeO{sub 2} particles.
Sulieman, Kamal Mahir [School of Physics, Universiti Sains Malaysia (USM), 11800 Minden, Penang (Malaysia); Physics Department, Alzaiem Alazhary University, 1432-Khartoum (Sudan); Jumidali, M. M. [School of Physics, Universiti Sains Malaysia (USM), 11800 Minden, Penang (Malaysia); Faculty of Applied Science, Universiti Teknologi MARA, 13500 Penang (Malaysia); Hashim, M. R. [School of Physics, Universiti Sains Malaysia (USM), 11800 Minden, Penang (Malaysia)
Process for preparing high-transition-temperature superconductors in the Nb-Al-Ge system
The patent describes a process for preparing superconducting materials in the Nb-Al-Ge system having transition temperatures in excess of 19K. The process comprises premixing powdered constituents, pressing them into a plug, heating the plug to 1,450-1,800C for 30 minutes to an hour under vacuum or an inert atmosphere, and annealing at moderate temperatures for reasonably long times (approximately 50 hours). High transition-temperature superconductors, including those in the Nb3(Al,Ge) system, prepared in accordance with this process exhibit little degradation in the superconducting transition temperature on being ground to -200 mesh powder. (GRA)
Giorgi, A.L.; Szklarz, E.G.
Precise measurement of the {sup 64}Ge mass and its effect on the rp process
The Canadian Penning Trap mass spectrometer has been used to determine the mass excesses of {sup 64}Ge and {sup 64}Ga as -54344(30) keV and -58832.5(39) keV, respectively. Under typical conditions used for modeling x-ray bursts, {sup 64}Ge is confirmed as a waiting-point nuclide and can contribute up to 35.5 s to the timescale of the rp process at a peak x-ray burst temperature of 1.5 GK.
Clark, J. A. [Wright Nuclear Structure Laboratory, Yale University, New Haven, Connecticut 06520 (United States); Department of Physics and Astronomy, University of Manitoba, Winnipeg, Manitoba R3T 2N2 (Canada); Physics Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Sharma, K. S. [Department of Physics and Astronomy, University of Manitoba, Winnipeg, Manitoba R3T 2N2 (Canada); Savard, G. [Physics Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Department of Physics, University of Chicago, Chicago, Illinois 60637 (United States); Levand, A. F.; Zhou, Z.; Seweryniak, D.; Trimble, W. [Physics Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Wang, J. C. [Department of Physics and Astronomy, University of Manitoba, Winnipeg, Manitoba R3T 2N2 (Canada); Physics Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Blank, B. [Physics Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Centre d'Etudes Nucleaires de Bordeaux-Gradignan, F-33175 Gradignan Cedex (France); Buchinger, F.; Crawford, J. E.; Gulick, S.; Lee, J. K. P. [Department of Physics, McGill University, Montreal, Quebec H3A 2T8 (Canada)
Implications of 98 GeV and 125 GeV Higgs scenario in non-decoupling SUSY with updated ATLAS, CMS and PLANCK data
We discuss both MSSM and NMSSM scenarios in which the lightest Higgs boson with $m_h=98$~GeV is consistent with the small excess ($\\sim 2.3 \\sigma$) observed at the LEP in $e^+ e^-\\rightarrow Zh$, with $h \\rightarrow b {\\bar b}$ process and the heavier Higgs boson of mass close to 125~GeV as the observed candidate of the SM Higgs like particle at the LHC. We show the allowed regions in the non-decoupling Higgs zone of MSSM parameter space which are consistent with several low energy constraints coming from heavy flavour physics, latest experimental data on Higgs signals and lower limit on superparticle masses from 7~TeV and 8~TeV LHC run. We also implement the constraints from the relic density of the cold dark matter as obtained from the recent PLANCK data. Additionally, we discuss the possibility of observing the light Higgs boson of mass 98~GeV at the 14~TeV LHC run via $pp \\rightarrow V h$, with $h \\rightarrow b \\bar b$ using the technique of jet substructure. Our analysis shows that at 14~TeV LHC run wit...
Bhattacherjee, Biplob; Chakraborty, Amit; Chattopadhyay, Utpal; Das, Debottam; Ghosh, Dilip Kumar
Laser wavelength effects on the charge state resolved ion energy distributions from laser-produced Sn plasma
Laser wavelength effects on the charge state resolved ion energy distributions from laser of laser wavelength on the charge state resolved ion energy distributions from laser-produced Sn plasma channel electron multiplier are used to record the charge state resolved ion energy distributions 100 cm
Najmabadi, Farrokh
Field emission characteristics of SnO2/CNTs composites prepared by microwave-assisted wet impregnation
The SnO2/CNT composites were prepared by microwave-assisted wet impregnation at 60�C. The process was optimized by varying the microwave power and reaction time. Raman analysis showed the typical features of the rutile phase of as-synthesized ...
Sreejarani K. Pillai; Sarah C. Motshekga; Suprakas Sinha Ray; John Kennedy
Water bathing synthesis of high-surface-area nanocrystal-assembled SnO{sub 2} particles
Nanocrystal assembled SnO{sub 2} particles were synthesized in aqueous solutions. The particles showed high BET surface area of 276 m{sup 2}/g. It was much higher than that of our previous studies. BJH analyses indicated that the particles had pores of about 2-5 nm. The particles included two kinds of morphologies. The first particles were about 300-1000 nm in diameter, which were assemblies of acicular crystals of 5-10 nm in width and 100-200 nm in length. They contributed high BET surface area. The second particles were about 10,000-3000 nm in diameter, which were assemblies of ellipse crystals of 100-200 in width and 200-400 nm in length. The ellipse crystals consisted of sheet crystals. They connected with a certain angle and arranged their long direction parallel. - Graphical abstract: Acicular crystal assembled SnO{sub 2} particles and ellipse crystal assembled SnO{sub 2} particles were synthesized in the aqueous solutions. They showed high BET surface area of 276 m{sup 2}/g. Highlights: Black-Right-Pointing-Pointer Unique SnO{sub 2} nanocrystals were synthesized in an aqueous solution. Black-Right-Pointing-Pointer They were acicular crystals and ellipse crystals. Black-Right-Pointing-Pointer They had high BET surface area of 276 m{sup 2}/g.
Masuda, Yoshitake, E-mail: email@example.com [National Institute of Advanced Industrial Science and Technology (AIST), 2266-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463-8560 (Japan); Ohji, Tatsuki; Kato, Kazumi [National Institute of Advanced Industrial Science and Technology (AIST), 2266-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463-8560 (Japan)
High capacity, reversible alloying reactions in SnSb/C nanocomposites for Na-ion battery applications
A new SnSb/C nanocomposite based on Na alloying reactions is demonstrated as anode for Na-ion battery applications. The electrode can achieve an exceptionally high capacity (544 mA h g{sup -1}, almost double that of intercalation carbon materials), good rate capacity and cyclability (80% capacity retention over 50 cycles) for Na-ion storage.
Xiao, Lifen; Cao, Yuliang; Xiao, Jie; Wang, Wei; Kovarik, Libor; Nie, Zimin; Liu, Jun
Electrical Resistance of Nb3Sn/Cu Splices Produced by Electromagnetic Pulse Technology and Soft Soldering
The electrical interconnection of Nb3Sn/Cu strands is a key issue for the construction of Nb3Sn based damping ring wigglers and insertion devices for third generation light sources. We compare the electrical resistance of Nb3Sn/Cu splices manufactured by solid state welding using Electromagnetic Pulse Technology (EMPT) with that of splices produced by soft soldering with two different solders. The resistance of splices produced by soft soldering depends strongly on the resistivity of the solder alloy at the operating temperature. By solid state welding splice resistances below 10 nOhm can be achieved with 1 cm strand overlap length only, which is about 4 times lower than the resistance of Sn96Ag4 soldered splices with the same overlap length. The comparison of experimental results with Finite Element simulations shows that the electrical resistance of EMPT welded splices is determined by the resistance of the stabilizing copper between the superconducting filaments and confirms that welding of the strand matr...
Schoerling, D; Scheuerlein, C; Atieh, S; Schaefer, R
Electrical and gas-sensitive properties of nanostructured SnO{sub 2}:ZrO{sub 2} semiconductor films
The results of a study of the effect of atomic composition of metal-oxide semiconductor composites SnO{sub 2}:ZrO{sub 2} on the surface morphology, polycrystal grain size, resistivity, concentration, free-carrier mobility, and gas-sensitive properties of thin films (0.5-2.5 {mu}m) are presented. Films SnO{sub 2} with ZrO{sub 2} additives (the Zr content was varied from 0.5 to 4.6 at %) are grown by reactive ion-beam sputtering of metal targets of different compositions in a controlled Ar + O{sub 2} atmosphere. Using transmission electron microscopy, atomic-force microscopy, and high-resolution transmission electron microscopy, it is experimentally shown that, as the Zr content increases in the SnO{sub 2}:ZrO{sub 2} film composition, the polycrystal grain size decreases from 45 to 10 nm, the free-carrier concentration decreases almost by four orders of magnitude and the mobility increases by approximately nine times. As the Zr content increases in the SnO{sub 2}:ZrO{sub 2} film from 0.5 to 4.6 at %, the temperature of maximum gas sensitivity of films to such gases as ethanol, isopropyl alcohol, and acetone decreases by 100-190 Degree-Sign C.
Rembeza, S. I., E-mail: email@example.com; Kosheleva, N. N.; Rembeza, E. S.; Svistova, T. V.; Shmatova, Yu. V. [Voronezh State Technical University (Russian Federation); Xu Gang [Tsinghua University (China)
The novel use of low temperature hydrogenated microcrystalline silicon germanium (�cSiGe: H) for MEMS applications
In this paper, we propose hydrogenated microcrystalline silicon germanium (@mcSiGe:H) as a MEMS structural material deposited at temperatures of 300-400 ^oC, showing good mechanical and electrical properties. This range of deposition temperatures is ... Keywords: Growth mechanism, Low temperature processing, Microcrystalline, Microelectromechanical systems, PECVD, SiGe, Stress
M. Gromova; K. Baert; C. Van Hoof; A. Mehta; A. Witvrouw
Neutral pion production in Au plus Au collisions at root s(NN)=200 GeV
The results of midrapidity (0GeV/c) in ?(s[subscript NN])=200?GeV?Au+Au collisions, measured by the STAR experiment, are presented. ...
Walker, M.
Direct photons in 200 GeV p+p, d+Au, and Au+Au from PHENIX
Direct photons were measured with the PHENIX experiment in p+p, d+Au, and Au+Au at sqrt(s_NN) = 200 GeV. To tackle the p_T region below 5 GeV/c, direct photons were measured through their internal conversion into e^+e^- in Au+Au collisions.
Stefan Bathe; for the PHENIX Collaboration
Room-temperature electroluminescence from germanium in an Al0.3Ga0.7As/Ge heterojunction
.7As/Ge heterojunction light-emitting diode without any complicated manipulation for alternating. ©2012 Optical Society of America OCIS codes: (230.3670) Light-emitting diodes; (230.3990) Micro. Vuckovi, and Y. Nishi, "Room temperature 1.6 microm electroluminescence from Ge light emitting diode on Si
Kolner, Brian H.
The Influence of Strain Relaxation on the Electrical Properties of Submicron Si/SiGe Resonant-Tunneling Diodes
Resonant tunneling devices (RTDs) and resonant tunneling transistors (RTTs) are possible building blocks with increased functionality of future microelectronic circuits. These quantum devices can be made in the Si/SiGe system, which is compatible with ... Keywords: SiGe, resonant tunneling, strain relaxation
P. W. Lukey; J. Caro; T. Zijlstra; E. van der Drift; S. Radelaar
Adhesion effect of interface layers on pattern fabrication with GeSbTe as laser thermal lithography film
Adhesion of pattern structures is a very important issue in laser thermal lithography. In this paper, Si"3N"4 and ZnS-SiO"2 were investigated as interface layers to improve patterns' adhesion to substrate on pattern fabrication with Ge"2Sb"2Te"5 as laser ... Keywords: Adhesion, GeSbTe, Interface layers, Thermal lithography, Thin films, Wet etching
Changmeng Deng; Yongyou Geng; Yiqun Wu; Yang Wang; Jinsong Wei
Room-Temperature Ferromagnetism in Chemically Synthesized Sn?-xCox O? Powders
Room temperature ferromagnetism is observed in chemically synthesized powder samples of Sn??xCox O? with x = 0.005 and 0.01. Magnetic hysteresis loops are ovserved at 300K with coercivity Hc ~ 630 Oe, saturation magnetization Ms ~0.133?? and about 31% remenance. Analyses of the magnetization data of paramagnetic samples with x = 0.01 and 0.03, measured as a function of temperature (3-330K) and magnetic field (up to 50kOe), indicated the presence of Co�? ions with spin S = 3/2. Magnetic data obtained from samples prepared at different temperatures indicate that the observed ferromagnetism for x ? 0.01 might have been triggered by changes in the oxygen stiochiometry.
Punnoose, Alex; Hays, Jason S.; Gopal, Vidyut; Shutthanandan, V.
Multiple-stripe lithiation mechanism of individual SnO2 nanowires in a flooding geometry
The atomic scale lithiation mechanism of individual SnO2 nanowires in a flooding geometry with the entire wires being immersed in the electrolyte was revealed by in-situ transmission electron microscopy. The lithiation initiated multiple stripes with width of a few nanometer parallel to {l_brace}020{r_brace} planes transversing the entire wires, serving as multiple reaction fronts for late stage of lithiation. Inside the stripes, we identified high density of dislocations and enlarged inter-planar spacing, which provide effective path for lithium ion transport. The density of the stripes increased with further lithiation, and eventually they merged with one another, causing a large enlongation and volume expansion and the crystalline to amorphous phase transformation. This multiple stripes and multiple reaction fronts lithiation mechanism is unexpected and differs completely from the expected core-shell lithiation mechanism.
Zhong, Li; Liu, Xiao H.; Wang, G. F.; Mao, Scott X.; Huang, Jian Yu
Co-Evaporated Cu2ZnSnSe4 Films and Devices
The use of vacuum co-evaporation to produce Cu2ZnSnSe4 photovoltaic devices with 9.15% total-area efficiency is described. These new results suggest that the early success of the atmospheric techniques for kesterite photovoltaics may be related to the ease with which one can control film composition and volatile phases, rather than a fundamental benefit of atmospheric conditions for film properties. The co-evaporation growth recipe is documented, as is the motivation for various features of the recipe. Characteristics of the resulting kesterite films and devices are shown in scanning electron micrographs, including photoluminescence, current-voltage, and quantum efficiency. Current-voltage curves demonstrate low series resistance without the light-dark cross-over seen in many devices in the literature. Band gap indicated by quantum efficiency and photoluminescence is roughly consistent with that expected from first principles calculation.
Repins, I.; Beall, C.; Vora, N.; DeHart, C.; Kuciauskas, D.; Dippo, P.; To, B.; Mann, J.; Hsu, W. C.; Goodrich, A.; Noufi, R.
Interacting Stellar Wind and Photoionization Models of the SN 1987A Remnant
We are investigating the SN 1987A remnant by modeling the circumstellar environment of the progenitor star. Interacting stellar winds models have been reasonably successful at reproducing the gross features of the nebula, but some details, such as the early rise of the radio and x-ray emission from the supernova blast and the presence of the outer rings, are not explained in a pure wind model. In this paper we describe preliminary results from 2-D models that incorporate the effects of photoionization due to radiation from the central star. These models have successfully produced a thick HII region, as needed to produce the early radio and X-ray emission. The HII region is thickest away from the equatorial plane. The models have also produced a feature resembling the outer rings, but we suspect this to be an artifact of the 2-D calculations that would not persist in 3-D.
Robert Link; Duane L. Rosenberg; Roger A. Chevalier
Optical Modulator on Si Employing Ge Quantum Wells Jonathan E. Roth1*
Optical Modulator on Si Employing Ge Quantum Wells Jonathan E. Roth1* , Onur Fidaner1 , Rebecca K ; (230.5590) Quantum-well devices The recently demonstrated quantum confined Stark effect (QCSE) in germanium quantum wells is a likely candidate for creating optoelectronic modulators for monolithically
Search for charm in 250 GeV/c $pi$$sup -$p interactions
A study was made of the reaction $pi$$sup -$ + p at 250 GeV/c in order to search for charmed particles. Cross sections, effective mass distributions, and an upper limit for each decay mode were found. However, no evidence was found for charmed particles. (JFP)
Bogert, D.; Hanft, R.; Albright, J.R.
Inclusive cross sections are found for strange particle production in $pi$$sup -$p interactions at 250 GeV/c in a search for charmed particles using neutral particle decays in a bubble chamber. The results are preliminary, but at the present statistical level no evidence was found for charmed particle production. (JFP)
Harris, R.; Bogert, D.; Hanft, R.
Measurements of total cross sections between 23 and 280 GeV/c
The high precision measurements of the total cross sections for $pi$/sup +-/, K/sup +-/, p, and anti p scattering from H$sub 2$ and D$sub 2$ were continued with an extension of the energy range from 23 to 280 GeV/c. (JFP)
Koehler, P.F.M.
Energy deposition of 24 GeV/c protons in gravity affected
Energy deposition of 24 GeV/c protons in gravity affected mercury jet Sergei Striganov Fermilab +- 15 degree 75 +- 15 degree #12;Energy deposition density in round gravity affected jet at 5 Tesla, r=8.1 degree 84.2 +- 5.8 degree 330.9 +- 29.1 degree #12;Energy deposition density in elliptic gravity affected
McDonald, Kirk
? cross section in p+p collisions at ?s=200??GeV
We report on a measurement of the ?(1S+2S+3S)?e+e- cross section at midrapidity in p+p collisions at ?s=200??GeV. We find the cross section to be 114�38(stat+fit)-24+23(syst)??pb. Perturbative QCD calculations at next-to-leading ...
Balewski, Jan T.
The GERDA experiment for the search of 0??? decay in ^{76}Ge
The GERDA collaboration is performing a search for neutrinoless double beta decay of ^{76}Ge with the eponymous detector. The experiment has been installed and commissioned at the Laboratori Nazionali del Gran Sasso and has started operation in November 2011. The design, construction and first operational results are described, along with detailed information from the R&D phase.
GERDA Collaboration; K. -H. Ackermann; M. Agostini; M. Allardt; M. Altmann; E. Andreotti; A. M. Bakalyarov; M. Balata; I. Barabanov; M. Barnabe Heider; N. Barros; L. Baudis; C. Bauer; N. Becerici-Schmidt; E. Bellotti; S. Belogurov; S. T. Belyaev; G. Benato; A. Bettini; L. Bezrukov; T. Bode; V. Brudanin; R. Brugnera; D. Budjas; A. Caldwell; C. Cattadori; A. Chernogorov; O. Chkvorets; F. Cossavella; A. D`Andragora; E. V. Demidova; A. Denisov; A. di Vacri; A. Domula; V. Egorov; R. Falkenstein; A. Ferella; K. Freund; F. Froborg; N. Frodyma; A. Gangapshev; A. Garfagnini; J. Gasparro; S. Gazzana; R. Gonzalez de Orduna; P. Grabmayr; V. Gurentsov; K. Gusev; K. K. Guthikonda; W. Hampel; A. Hegai; M. Heisel; S. Hemmer; G. Heusser; W. Hofmann; M. Hult; L. V. Inzhechik; L. Ioannucci; J. Janicsko Csalty; J. Jochum; M. Junker; R. Kankanyan; S. Kianovsky; T. Kihm; J. Kiko; I. V. Kirpichnikov; A. Kirsch; A. Klimenko; M. Knapp; K. T. Kn�pfle; O. Kochetov; V. N. Kornoukhov; K. Kr�ninger; V. Kusminov; M. Laubenstein; A. Lazzaro; V. I. Lebedev; B. Lehnert; D. Lenz; H. Liao; M. Lindner; I. Lippi; J. Liu; X. Liu; A. Lubashevskiy; B. Lubsandorzhiev; A. A. Machado; B. Majorovits; W. Maneschg; G. Marissens; S. Mayer; G. Meierhofer; I. Nemchenok; L. Niedermeier; S. Nisi; J. Oehm; C. O'Shaughnessy; L. Pandola; P. Peiffer; K. Pelczar; A. Pullia; S. Riboldi; F. Ritter; C. Rossi Alvarez; C. Sada; M. Salathe; C. Schmitt; S. Sch�nert; J. Schreiner; J. Schubert; O. Schulz; U. Schwan; B. Schwingenheuer; H. Seitz; E. Shevchik; M. Shirchenko; H. Simgen; A. Smolnikov; L. Stanco; F. Stelzer; H. Strecker; M. Tarka; U. Trunk; C. A. Ur; A. A. Vasenko; S. Vogt; O. Volynets; K. von Sturm; V. Wagner; M. Walter; A. Wegmann; M. Wojcik; E. Yanovich; P. Zavarise; I. Zhitnikov; S. V. Zhukov; D. Zinatulina; K. Zuber; G. Zuzel
A search for GeV-TeV emission from GRBs with the Milagro detector
in the three years since the launch of Swift. Keywords: gamma-ray sources; gamma-ray bursts; astronomical observations gamma-ray PACS: 98.70.Rz,95.85.Pw Gamma-ray bursts (GRBs) have been detected up to GeV energies. B. Yodh CPIOOO, Gamma-Ray Bursts 2007: Proceedings of the Santa Fe Conference, edited by M. Galassi
California at Santa Cruz, University of
Fabrication and Testing Status of CEBAF 12 GeV Upgrade Cavities
The 12 GeV upgrade of the Continuous Electron Beam Accelerator Facility (CEBAF) at Jefferson Laboratory (JLab) is under way. All cavities have been built by industry and are presently undergoing post-processing and final low and high power qualification before cryomodule assembly. The status is reported including fabrication-related experiences, observations and issues throughout production, post-processing and qualification.
Marhauser, F; Davis, G K; Forehand, D; Grenoble, C; Hogan, J; Overton, R B; Reilly, A V; Rimmer, R A
Performance of First C100 Cryomodules for the CEBAF 12 GeV Upgrade Project
The Thomas Jefferson National Accelerator Facility is currently engaged in the 12 GeV Upgrade Project. The goal of the project is a doubling of the available beam energy of CEBAF from 6 GeV to 12 GeV. This increase in beam energy will be due primarily to the construction and installation of ten "C100" cryomodules in the CEBAF linacs. The C100 cryomodules are designed to deliver an average 108 MV each from a string of eight seven-cell, electropolished superconducting RF cavities operating at an average accelerating gradient of 19.2 MV/m. The new cryomodules fit in the same available linac space as the original CEBAF 20 MV cryomodules. Cryomodule production started in September 2010. Initial acceptance testing started in June 2011. The first two C100 cryomodules were installed and tested from August 2011 through October 2011, and successfully operated during the last period of the CEBAF 6 GeV era, which ended in May 2012. This paper will present the results of acceptance testing and commissioning of the C100 style cryomodules to date.
Drury, Michael A. [JLAB; Burrill, Andrew B. [JLAB, Helmholtz-Zentrum Berlin fur Materialien und Energie GmbH; Davis, G. Kirk [JLAB; Hogan, John P. [JLAB; King, Lawrence [JLAB; Marhauser, Frank [JLAB; Park, HyeKyoung [JLAB; Preble, Joseph [JLAB; Reece, Charles E. [JLAB; Reilly, Anthony V. [JLAB; Rimmer, Robert A. [JLAB; Wang, Haipeng [JLAB; Wiseman, Mark A. [JLAB
Measurements of the Cosmic-Ray Positron Fraction From 1 to 50 GeV
Two measurements of the cosmic-ray positron fraction as a function of energy have been made using the High Energy Antimatter Telescope (HEAT) balloon-borne instrument. The first flight took place from Ft. Sumner, New Mexico in 1994, and yielded results above the geomagnetic cutoff energy of 4.5 GeV. The second flight from Lynn Lake, Manitoba in 1995 permitted measurements over a larger energy interval, from 1 GeV to 50 GeV. In this letter we present results on the positron fraction based on data from the Lynn Lake flight, and compare these with the previously published results from the Ft. Sumner flight. The results confirm that the positron fraction does not increase with energy above ~10 GeV, although a small excess above purely secondary production cannot be ruled out. At low energies the positron fraction is slightly larger than that reported from measurements made in the 1960's. This effect could possibly be a consequence of charge dependence in the level of solar modulation.
HEAT Collaboration; S. W. Barwick; E. Schneider; J. J. Beatty; G. A. de Nolfo; A. Bhattacharyya; C. R. Bower; J. A. Musser; C. J. Chaput; S. Coutu; S. McKee; G. Tarle; A. D. Tomasch; J. Knapp; D. M. Lowder; D. Muller; S. P. Swordy; E. Torbet; S. L. Nutter
LASER WAKEFIELD ACCELERATION BEYOND 1 GeV USING IONIZATION INDUCED INJECTION*
A series of laser wake field accelerator experiments leading to electron energy exceeding 1 GeV are described. Theoretical concepts and experimental methods developed while conducting experiments using the 10 TW Ti:Sapphire laser at UCLA were implemented and transferred successfully to the 100 TW Callisto Laser System at the Jupiter Laser Facility at LLNL. To reach electron energies greater than 1 GeV with current laser systems, it is necessary to inject and trap electrons into the wake and to guide the laser for more than 1 cm of plasma. Using the 10 TW laser, the physics of self-guiding and the limitations in regards to pump depletion over cm-scale plasmas were demonstrated. Furthermore, a novel injection mechanism was explored which allows injection by ionization at conditions necessary for generating electron energies greater than a GeV. The 10 TW results were followed by self-guiding at the 100 TW scale over cm plasma lengths. The energy of the self-injected electrons, at 3 x 10{sup 18} cm{sup -3} plasma density, was limited by dephasing to 720 MeV. Implementation of ionization injection allowed extending the acceleration well beyond a centimeter and 1.4 GeV electrons were measured.
Marsh, K A; Clayton, C E; Joshi, C; Lu, W; Mori, W B; Pak, A; silva, L O; Lemos, N; Fonseca, R A; de Freitas, S; Albert, F; Doeppner, T; Filip, C; Froula, D; Glenzer, S H; Price, D; Ralph, J; Pollock, B B
Molecular beam epitaxy passivation studies of Ge and III-V semiconductors for advanced CMOS
Future CMOS technologies will require the use of substrate material with a very high mobility in order to fulfil the performance requirements. Therefore, combination of Ge p-MOS with n-MOS devices made out of high mobility III/V compounds, such as GaAs, ... Keywords: High mobility semiconductors, Molecular beam epitaxy (MBE), Passivation
C. Merckling; J. Penaud; D. Kohen; F. Bellenger; A. Alian; G. Brammertz; M. El-Kazzi; M. Houssa; J. Dekoster; M. Caymax; M. Meuris; M. M. Heyns
Superconductivity for Electric Systems Program Review LANL Contributions to GE HTS Generator
-section · Develop a heat generation profile => thermal analysis #12;Superconductivity for Electric Systems Program analysis of the coolant path Investigated affect of rotation on heat load · Completed initial simulationsSuperconductivity for Electric Systems Program Review LANL Contributions to GE HTS Generator
SiGe: An attractive material for post-CMOS processing of MEMS
This work gives an overview of the different developments for silicon germanium (Si"1"-"xGe"x) from a MEMS post-processing perspective. First, the maximum processing temperature that does not introduce any damage or degradation into the standard characteristics ... Keywords: Excimer laser annealing, MEMS Post-Processing, Silicon germanium
Sherif Sedky
CTu2J.1.pdf CLEO Technical Digest OSA 2012 Light Emission in Ge Quantum Wells
.3670) Light-emitting diode 1. Introduction The field of Si photonics presents a number of potential benefits. Saraswat, J. Vuckovic, and Y. Nishi, "Room temperature 1.6 µm electroluminescence from Ge light emitting diode on Si substrate" Opt. Express 17, 10019 (2009). [3] P. Chaisakul, D. Marris-Morini, G. Isella, D
Spontaneous Domain Switching during Phase Separation of Pb on Ge(111) and S. Chiang1
Spontaneous Domain Switching during Phase Separation of Pb on Ge(111) Y. Sato1,2 and S. Chiang1 1, and S. Chiang, Mater. Sci. Eng. B 96, 215 (2002). [13] Y. Sato and S. Chiang (to be published). [14] See
Chiang, Shirley
In adsorption on Si(112) and its impact on Ge growth
The change of the Si(112) surface morphology and structure induced by In adsorption, as well as the impact of In preadsorption on the growth kinetics and island morphology in Ge/Si(112) epitaxy, has been investigated by means of low-energy electron microscopy ...
M. Speckmann; Th. Schmidt; J. I. Flege; J. Falta
Room temperature 1.6 m electroluminescence from Ge light emitting diode on Si substrate
Room temperature 1.6 µm electroluminescence from Ge light emitting diode on Si substrate Szu n+/p light emitting diode on a Si substrate. Unlike normal electrically pumped devices, this device.4670) Optical materials; (230.3670) Light-emitting diodes. References and links 1. L. C. Kimerling, "Silicon
Vuckovic, Jelena
Fabrication of improved SiGe alloys for an 18-couple module test
N- and p-type Si{sub 0.78}Ge{sub 0.22} alloys were fabricated to determine if recently reported improvements in the figure-of-merit, Z, could be realized in devices. These will be tested in an 18-couple module to directly compare the performance of these materials with that of standard coarse-grain SiGe used in flight programs. We describe the synthesis by vacuum casting and hot pressing p-type SiGe and mechanical alloying and hot-isostatic pressing n-type SiGe. Improved materials and standard materials are characterized and compared. The integrated average figures-of-merit (573--1273 K) of the improved materials were Z{sub p} = 0.59 {times} 10{sup {minus}3} K{sup {minus}1} and Z{sub n} = 0.85 {times} 10{sup {minus}3} K{sup {minus}1} compared with Z{sub p} = 0.52 {times} l0{sup {minus}3} K{sup {minus}1} and Z{sub n} = 0.76 {times} 10{sup {minus}3} K{sup {minus}1} for the standard materials. We also report the power factors for improved and standard materials removed from fabricated devices to gain insight as to how subsequent processing impacts performance.
Loughin, S.; Nakahara, J.F.; Centurioni, D.X. [Martin Marietta Astro Space, Philadelphia, PA (United States); Cook, B.A.; Harringa, J.L. [Ames Lab., IA (United States)
Barwick, S W; Beatty, J J; De Nolfo, G A; Bhattacharya, A; Bower, C; Musser, J A; Chaput, C J; Coutu, S; McKee, S; Tarl�, G; Tomasch, A D; Knapp, J; Lowder, D M; M�ller, D; Swordy, S P; Torbet, E; Nutter, S L
Barocaloric effect in the magnetocaloric prototype Gd5Si2Ge2
We report on calorimetric measurements under hydrostatic pressure that enabled us to determine the barocaloric effect in Gd5Si2Ge2. The values for the entropy change for moderate pressures compare favourably to those corresponding to the magnetocaloric effect in this compound. Entropy data are complemented with direct measurements of the adiabatic pressure-induced temperature change.
Yuce, Suheyla; Barrio, Maria; Emre, Baris; Stern-Taulats, Enric; Planes, Antoni; Tamarit, Josep-Lluis; Mudryk, Yaroslav; Gschneidner, Karl A.; Pecharsky, Vitalij K.; Manosa, Lluis
GALEX AND PAN-STARRS1 DISCOVERY OF SN IIP 2010aq: THE FIRST FEW DAYS AFTER SHOCK BREAKOUT IN A RED SUPERGIANT STAR
We present the early UV and optical light curve of Type IIP supernova (SN) 2010aq at z = 0.0862, and compare it to analytical models for thermal emission following SN shock breakout in a red supergiant star. SN 2010aq was discovered in joint monitoring between the Galaxy Evolution Explorer (GALEX) Time Domain Survey (TDS) in the NUV and the Pan-STARRS1 Medium Deep Survey (PS1 MDS) in the g, r, i, and z bands. The GALEX and Pan-STARRS1 observations detect the SN less than 1 day after the shock breakout, measure a diluted blackbody temperature of 31, 000 {+-} 6000 K 1 day later, and follow the rise in the UV/optical light curve over the next 2 days caused by the expansion and cooling of the SN ejecta. The high signal-to-noise ratio of the simultaneous UV and optical photometry allows us to fit for a progenitor star radius of 700 {+-} 200R {sub sun}, the size of a red supergiant star. An excess in UV emission two weeks after shock breakout compared with SNe well fitted by model atmosphere-code synthetic spectra with solar metallicity is best explained by suppressed line blanketing due to a lower metallicity progenitor star in SN 2010aq. Continued monitoring of PS1 MDS fields by the GALEX TDS will increase the sample of early UV detections of Type II SNe by an order of magnitude and probe the diversity of SN progenitor star properties.
Gezari, S.; Huber, M. E.; Grav, T. [Department of Physics and Astronomy, Johns Hopkins University, 3400 North Charles Street, Baltimore, MD 21218 (United States); Rest, A.; Narayan, G. [Department of Physics, Harvard University, Cambridge, MA 20138 (United States); Forster, K.; Neill, J. D.; Martin, D. C. [California Institute of Technology, 1200 East California Blvd., Pasadena, CA 91125 (United States); Valenti, S.; Smartt, S. J. [Astrophysics Research Centre, School of Maths and Physics, Queen's University, BT7 1NN, Belfast (United Kingdom); Chornock, R.; Berger, E.; Soderberg, A. M. [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Mattila, S.; Kankare, E. [Tuorla Observatory, Department of Physics and Astronomy, University of Turku, Fl-21500, Piikkioe (Finland); Burgett, W. S.; Chambers, K. C.; Dombeck, T.; Heasley, J. N.; Hodapp, K. W., E-mail: firstname.lastname@example.com [Institute for Astronomy, University of Hawaii at Manoa, Honolulu, HI 96822 (United States)
Measurements of Compton Scattering on the Proton at 2 - 6 GeV
Similar to elastic electron scattering, Compton Scattering on the proton at high momentum transfers(and high p?) can be an effective method to study its short-distance structure. An experiment has been carried out to measure the cross sections for Real Compton Scattering (RCS) on the proton for 2.3-5.7 GeV electron beam energies and a wide distribution of large scattering angles. The 25 kinematic settings sampled a domain of s = 5?11(GeV/c)2,?t = ?7(GeV/c)2 and ?u = 0.5?6.5(GeV/c)2. In addition, a measurement of longitudinal and transverse polarization transfer asymmetries was made at a 3.48 GeV beam energy and a scattering angle of ?cm = 120o. These measurements were performed to test the existing theoretical mechanisms for this process as well as to determine RCS form factors. At the heart of the scientific motivation is the desire to understand the manner in which a nucleon interacts with external excitations at the above listed energies, by comparing and contrasting the two existing models � Leading Twist Mechanism and Soft Overlap �Handbag� Mechanism � and identify the dominant mechanism. Furthermore, the Handbag Mechanism allows one to calculate reaction observables in the framework of Generalized Parton Distributions (GPD), which have the function of bridging the wide gap between the exclusive(form factors) and inclusive(parton distribution functions) description of the proton. The experiment was conducted in Hall A of Thomas Jefferson National Accelerator Facility(Jefferson Lab). It used a polarized and unpolarized electron beam, a 6% copper radiator with the thickness of 6.1% radiation lengths (to produce a bremsstrahlung photon beam), the Hall A liquid hydrogen target, a high resolution spectrometer with a focal plane polarimeter, and a photon hodoscope calorimeter. Results of the differential cross sections are presented, and discussed in the general context of the scientific motivation.
Areg Danagoulian
Contactless monitoring of Ge content and B concentration in ultrathin single and double layer Si{sub 1-x}Ge{sub x} epitaxial films using multiwavelength micro-Raman spectroscopy
Non-contact monitoring of Ge content and B concentration in single and double Si{sub 1-x}Ge{sub x} epitaxial layers on Si(100) device wafers was attempted using high-resolution, multiwavelength micro-Raman spectroscopy. The Ge content and B concentration determined by secondary ion mass spectroscopy (SIMS) depth profiling showed very strong correlation with the position and full-width-at-half-maximum of the Si-Si peak from the Si{sub 1-x}Ge{sub x} epitaxial layers as determined by Raman measurements. High resolution X-ray diffraction (HRXRD) characterization was done for all wafers to determine Ge and B sensitivity and form comparisons with Raman and SIMS analysis. The non-destructive, in-line monitoring of Ge content and B concentration of single and double Si{sub 1-x}Ge{sub x} epitaxial layers with thickness ranging from 5 {approx} 120 nm, on small area monitoring pads, was successfully demonstrated by multiwavelength micro-Raman spectroscopy during epitaxial process optimization, material property verification, and quality control applications.
Chang, Chun-Wei; Hong, Min-Hao; Lee, Wei-Fan; Lee, Kuan-Ching; Jang Jian, Shiu-Ko; Chuang, Yen; Fan, Yu-Ta [Taiwan Semiconductor Manufacturing Company, Ltd., 8, Li-Hsin Rd. 6, Hsinchu Science Park, Hsinchu, 300-77, Taiwan (China); Hasuike, Noriyuki; Harima, Hiroshi [Kyoto Institute of Technology, Matsugasaki, Kyoto, 606-8585 (Japan); Ueda, Takeshi; Ishigaki, Toshikazu; Kang, Kitaek; Sik Yoo, Woo [WaferMasters, Inc., 246 East Gish Road, San Jose, California 95112 (United States)
The Periodic Table of Elements C
Atomic Number Chemical Symbol Atomic Weight Chemical Name = Solid at room temperature = Liquid at room temperature = Gas at room temperature = Radioactive = Artificially Made KEY METALS NON-METALS 12.011 http://education.jlab.org/ Last revised on April 3, 2013 [294] H Li Na K Be Mg Ca Sc Ti Rb Cs Fr Sr Y Ba Ra Zr Hf Rf V Nb Ta Db Cr Mo W Sg Mn Tc Re Bh Fe Ru Os Hs Co Rh Ir Mt Ni Pd Pt Ds Cu Ag Au Rg Zn Cd Hg Cn Ga In Tl Uut Ge Sn Pb Fl As Sb Bi Uup Se Te Po Lv Br I At Uus Kr Xe Rn Uuo La Ac Ce Th Pr Pa Nd U Pm Np Sm Pu Eu Am Gd Cm Tb Bk Dy Cf Ho Es Er Fm Tm Md Yb Yb No Lu Lr B Al C Si N P O S F Cl Ne He Ar HYDROGEN LITHIUM SODIUM POTASSIUM BERYLLIUM MAGNESIUM CALCIUM SCANDIUM TITANIUM RUBIDIUM CESIUM FRANCIUM STRONTIUM YTTRIUM BARIUM RADIUM ZIRCONIUM HAFNIUM RUTHERFORDIUM VANADIUM NIOBIUM TANTALUM DUBNIUM CHROMIUM MOLYBDENUM TUNGSTEN SEABORGIUM MANGANESE TECHNETIUM RHENIUM BOHRIUM IRON RUTHENIUM OSMIUM HASSIUM
.011 .011 Atomic Number Chemical Symbol Atomic Weight Chemical Name = Solid at room temperature = Liquid at room temperature = Gas at room temperature = Radioactive = Artificially Made KEY METALS NON-METALS http://education.jlab.org/ Last revised on April 3, 2013 [294] H Li Na K Be Mg Ca Sc Ti Rb Cs Fr Sr Y Ba Ra Zr Hf Rf V Nb Ta Db Cr Mo W Sg Mn Tc Re Bh Fe Ru Os Hs Co Rh Ir Mt Ni Pd Pt Ds Cu Ag Au Rg Zn Cd Hg Cn Ga In Tl Uut Ge Sn Pb Fl As Sb Bi Uup Se Te Po Lv Br I At Uus Kr Xe Rn Uuo La Ac Ce Th Pr Pa Nd U Pm Np Sm Pu Eu Am Gd Cm Tb Bk Dy Cf Ho Es Er Fm Tm Md Yb Yb No Lu Lr B Al C Si N P O S F Cl Ne He Ar HYDROGEN LITHIUM SODIUM POTASSIUM BERYLLIUM MAGNESIUM CALCIUM SCANDIUM TITANIUM RUBIDIUM CESIUM FRANCIUM STRONTIUM YTTRIUM BARIUM RADIUM ZIRCONIUM HAFNIUM RUTHERFORDIUM VANADIUM NIOBIUM TANTALUM DUBNIUM CHROMIUM MOLYBDENUM TUNGSTEN SEABORGIUM MANGANESE TECHNETIUM RHENIUM BOHRIUM IRON RUTHENIUM OSMIUM HASSIUM COBALT
High pT [p subscript T] nonphotonic electron production in p+p collisions at ?s=200??[square root of s=200] GeV
We present the measurement of nonphotonic electron production at high transverse momentum (pT>2.5??GeV/c) [(p subscript T > 2.5 GeV/c)] in p+p collisions at ?s=200??[square root of s=200] GeV using data recorded during ...
Comparative Study of the Defect Point Physics and Luminescence of the Kesterites Cu2ZnSnS4 and Cu2ZnSnSe4 and Chalcopyrite Cu(In,Ga)Se2: Preprint
In this contribution, we present a comparative study of the luminescence of the kesterites Cu2ZnSnS4 (CZTS) and Cu2ZnSnSe4 (CZTSe) and their related chalcopyrite Cu(In,Ga)Se2 (CIGSe). Luminescence spectroscopy suggests that the electronic properties of Zn-rich, Cu-poor kesterites (both CZTS and CZTSe) and Cu-poor CIGSe are dictated by fluctuations of the electrostatic and chemical potentials. The large redshift in the luminescence of grain boundaries in CIGSe, associated with the formation of a neutral barrier is clearly observed in CZTSe, and, to some extent, in CZTS. Kesterites can therefore replicate the fundamental electronic properties of CIGSe.
Romero, M. J.; Repins, I.; Teeter, G.; Contreras, M.; Al-Jassim, M.; Noufi, R.
Design of a 16T Nb{sub3}Sn Twin Bore Accelerator Dipole with a Window-frame Conductor Layout
Accelerator Dipole with a Window-Frame Conductor Layout*Accelerator Dipole with a Window-frame Conductor Layout, J.Nb3Sn Twin Dipole with a Window-Frame Conductor Layout J.M.
van Oort, J.M.
Experimental limits on massive neutrinos from e/sup +/e/sup /minus// annihilations at 29 GeV
A search was made in 29 GeV e/sup +/e/sup /minus// annihilations for massive neutrinos decaying to e/sup +-/X/sup /minus plus//(..nu..) where X is a muon or meson. A 300 pb/sup /minus/1/ data sample yielded just one candidate event with a mass m/sub ex/ > 1.8 GeV. Significant limits are found for new neutrinos with masses from 1.8 to 6.7 GeV and with mixing parameters in the range 10/sup /minus/6/ < chemically bondUchemically bond/sup 2/ < 1. 12 refs., 4 figs.
Akerlof, C.; Chapman, J.; Errede, D.; Ken, M.T.; Meyer, D.I.; Neal, H.; Nitz, D.; Thun, R.; Tschirhart, R.; Derrick, M.
X-ray photoelectron spectroscopy studies on Pd doped SnO{sub 2} liquid petroleum gas sensor
The present investigation deals with the electrical response of palladium doped tin oxide, as a means of improving the selectivity for liquid petroleum gas (LPG) in the presence of CO, CH{sub 4}. The sensor element with the composition of Pd(1.5 wt{percent}) in the base material SnO{sub 2} sintered at 800{degree}C, has shown a high sensitivity towards LPG with a negligible cross interference of CO and CH{sub 4} at an operating temperature of 350{degree}C. This greatly suggests the possibility of utilizing the sensor for the detection of LPG. X-ray photoelectron spectroscopy studies have been carried out to determine the possible chemical species involved in the gas-solid interaction and the enhancing mechanism of the Pd doped SnO{sub 2} sensor element, towards LPG sensitivity. {copyright} {ital 1997 American Institute of Physics.}
Phani, A.R. [Department of Physics, University of LAquila, 67040, LAquila (Italy)
Enhancing the efficiency of SnS solar cells via band-offset engineering with a zinc oxysulfide buffer layer
S absorber layers without breaking vacuum. Indium tin oxide (ITO) (200 nm) was deposited at room temperature at the National Renewable Energy Laboratory (NREL), exhibiting an improved cell performance of Jsc ¼ 19.4mA/cm2 by vapor deposition of p-type tin(II) sulfide, SnS, and n-type zinc oxysulfide, Zn(O,S), using a device
Gordon, Roy
u.s. DEPARTIIIENT OF ENERGY EERE PROJECT MA N A GE M E~ T CENT
MA N A GE M E~ T CENT MA N A GE M E~ T CENT ER NEPA DETERlIlINATION Page 1 of2 RECIPIENT:Power Environmental Energy Research Institute STATE: CO PROJECT TITLE: Novel Multidimensional Tracers for Geolhermallnter-Well Diagnostics Funding Opportunity Announcement Number DE-PS36-09G099018 Procurement Instrument Number OE·EEOOO3032 NEPA Control Number GFO-1 0-345 CID Number G03032 Based on my review orlhe Information concerning the proposed action, as NEPA Compliance Officer (authoriud under DOE Order 4SI.IA),1 have made the following determination: ex, EA, [IS APPENDIX AND NUMBER: Description: 83.1 Onsile and offsite site characterization and environmental monitoring. including siting, construction (or modification), operation, and dismantlement or closing (abandonment) of characterization and monitoring devices and siting,
CONTRACT NO. QZ001 UNDER CONTRACT NO. QZ001 UNDER COOPERATIVE AGREEMENT NO. DE-FC07-051D14635 BETWEEN DOMINION NUCLEAR NORTH ANNA LLC ("DOMINION") AND DOE; W(A)-05-025; CH-1291 The Petitioner, GE, has requested a waiver of domestic and certain foreign patent rights for all subject inventions that may be conceived or first actually reduced to practice by GE or its subcontractors, arising from its participation under the above referenced cooperative agreement entitled "North Anna Construction and Operating License Demonstration Project." The objective of the North Anna Construction and Operating License Demonstration Project is to demonstrate the combined Construction and Operating License ("COL") process under 10 CFR 52 to promote new Nuclear Power Plant
Categorical Exclusion Determination Form Proposed Action Title: (0675-1534) GE Global Research -
34) GE Global Research - 34) GE Global Research - Control Enabling Solutions with Ultrathin Strain and Temperature Sensor System for Reduced Battery Life Cycle Cost Program or Field Office: Advanced Research Projects Agency - Energy LocationCs) CCity/County/State): Niskayuna, NY; Ann Arbor, MI; Dearborn, MI Proposed Action Description: Funding will support efforts to develop a a novel sensor system with supporting multi-physics models to increase battery cell lifetime and extend battery range for electric vehicle applications. Proposed work will consist of: (1) development and fabrication a novel multi-measurand sensor capable of measuring strain and temperature across multiple battery cells; (2) performance of strain and temperature testing and development and validation of multi-physics models; (3)
SHIELDING ESTIMATES FOR THE ANL 6.0 GeV SYNCHROTRON LIGHT SOURCE
SHIELDING ESTIMATES FOR THE ANL 6.0 GeV SHIELDING ESTIMATES FOR THE ANL 6.0 GeV SYNCHROTRON LIGHT SOURCE H. J. Moe V. R. Veluri LS-55-Revised Harch 1987 2 1.0 Introduction Shielding estimates for the linac, positron converter, booster synchrotron and the positron storage ring have been computed using preliminary design information. Calculations have been made of the resulting radiation for several types of operations involving normal beam loss, as well as, certain accidental beam losses. When available, experimental data from existing accelerator and light source facilities have been used in lieu of theoretical estimates. 2.0 Shielding Design Objective The Department of Energy's basic occupational exposure limit is 5 rem per year (DOE 81). However, in its guidance for maintaining exposures "as
4 4 Statement of Considerations REQUEST BY GENERAL ELECTRIC CORPORATE RESEARCH AND DEVELOPMENT (GE) FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN PATENT RIGHTS TO INVENTIONS MADE UNDER CONTRACT NO. DE-FC26-00NT40993 ENTITLED "VARIABLE SPEED INTEGRATED INTELLIGENT BLOWER FOR HIGH EFFICIENCY HEATING VENTILATION AND AIR CONDITIONING"; W(A)-01-019, CH1066. GE has requested an advance waiver of domestic and foreign patent rights to inventions its employees may conceive or first actually reduce to practice in the performance of Contract No. DE-FC26-00NT40993. As brought out in the attached waiver petition, the scope of work includes the development and marketing of an Electronically Cormutated Motor (ECM) and fan combination. The combination utilizes a common rotating shaft and integral cooling and advanced blower fan
Radiation damage induced by GeV electrons in W-Re and Cu targets
3 3 UCRL-JC-148049 July 2002 Linear Collider Collaboration Tech Notes Radiation Damage Induced by GeV Electrons in W-Re Targets for Next Generation Linear Colliders M.-J. Caturla 1* , S. Roesler 2 , V. K. Bharadwaj 3 , D. C. Schultz 3 , J. C. Sheppard 3 , J. Marian 1 , B. D. Wirth 1 , W. Stein 1 and A. Sunwoo 1 1 Lawrence Livermore National Laboratory Livermore, CA 2 CERN, CH-1211 Geneva 23, Switzerland 3 Stanford Linear Accelerator Center Menlo Park, California s: We have studied the structural damage of W-Re targets produced by electrons with energies of several GeV and under different conditions of total number of electrons, beam shape and target depth. We report the differences in damage levels for different designs considered in the construction of the next generation of linear accelerators, and discuss the possible effects in the lifetime
SUBCONTRACT NO. QZ002 SUBCONTRACT NO. QZ002 UNDER PRIME CONTRACT NO. DE-FC07-051D14636 BETWEEN NUSTART ENERGY DEVELOPMENT ("NUSTART") AND DOE; W(A)-05- 026; CH-1292 The Petitioner, GE, has requested a waiver of domestic and certain foreign patent rights for all subject inventions that may be conceived or first actually reduced to practice by GE or its subcontractors, arising from its participation under the above referenced cooperative agreement entitled "NuStart Energy Construction and Operating License Demonstration Project." The objective of the cooperative agreement is to demonstrate the combined Construction and Operating License ("COL") process under 10 CFR 52 to promote new Nuclear Power Plant ("NPP") construction in the United States. This work is funded
Measurement of inclusive charged current interactions on carbon in a few-GeV neutrino beam
The SciBooNE Collaboration reports a measurement of inclusive charged current interactions of muon neutrinos on carbon with an average energy of 0.8 GeV using the Fermilab Booster Neutrino Beam. We compare our measurement with two neutrino interaction simulations: NEUT and NUANCE. The charged current interaction rates (product of flux and cross section) are extracted by fitting the muon kinematics, with a precision of 6-15% for the energy dependent and 3% for the energy integrated analyses. We also extract CC inclusive interaction cross sections from the observed rates, with a precision of 10-30% for the energy dependent and 8% for the energy integrated analyses. This is the first measurement of the CC inclusive cross section on carbon around 1 GeV. These results can be used to convert previous SciBooNE cross section ratio measurements to absolute cross section values.
Nakajima, Y.; jima, Y.Naka; Alcaraz-Aunion, J.L.; Brice, S.J.; Bugel, L.; Catala-Perez, J.; Cheng, G.; Conrad, J.M.; Djurcic, Z.; Dore, U.; Finley, D.A.; /Kyoto U. /Barcelona, IFAE /Fermilab /MIT /Valencia U. /Columbia U. /MIT /Columbia U. /INFN, Rome /Rome U. /Fermilab /Columbia U. /INFN, Rome /Rome U.
Coalescing at 8 GeV in the Fermilab Main Injector
For Project X, it is planned to inject a beam of 3 10{sup 11} particles per bunch into the Main Injector. To prepare for this by studying the effects of higher intensity bunches in the Main Injector it is necessary to perform coalescing at 8 GeV. The results of a series of experiments and simulations of 8 GeV coalescing are presented. To increase the coalescing efficiency adiabatic reduction of the 53 MHz RF is required. This results in {approx}70% coalescing efficiency of 5 initial bunches. Data using wall current monitors has been taken to compare previous work and new simulations for 53 MHz RF reduction, bunch rotations and coalescing, good agreement between experiment and simulation was found. By increasing the number of bunches to 7 and compressing the bunch energy spread a scheme generating approximately 3 10{sup 11} particles in a bunch has been achieved. These bunches will then be used in further investigations.
Scott, D.J.; Capista, D.; Chase, B.; Dye, J.; Kourbanis, I.; Seiya, K.; Yang, M.-J.; /Fermilab
SRF CAVITY PERFORMANCE OVERVIEW FOR THE 12 GeV UPGRADE
The CEBAF accelerator, a recirculating CW electron accelerator that is currently operating at Jefferson Laboratory, is in the process of having 10 new cryomodules installed to allow for the maximum beam energy to be increased from 6 GeV to 12 GeV. This upgrade required the fabrication, processing and RF qualification of 80, seven cell elliptical SRF cavities, a process that was completed in February 2012. The RF performance achieve in the vertical testing dewars has exceeded the design specification by {approx}25% and is a testament to the cavity design and processing cycle that has been implemented. This paper will provide a summary of the cavity RF performance in the vertical tests, as well as review the overall cavity processing cycle and duration for the project.
A. Burrill, G.K. Davis, C.E. Reece, A.V. Reilly, M. Stirbet
Control of Laser Plasma Based Accelerators up to 1 GeV
This dissertation documents the development of a broadband electron spectrometer (ESM) for GeV class Laser Wakefield Accelerators (LWFA), the production of high quality GeV electron beams (e-beams) for the first time in a LWFA by using a capillary discharge guide (CDG), and a statistical analysis of CDG-LWFAs. An ESM specialized for CDG-LWFAs with an unprecedented wide momentum acceptance, from 0.01 to 1.1 GeV in a single shot, has been developed. Simultaneous measurement of e-beam spectra and output laser properties as well as a large angular acceptance (> {+-} 10 mrad) were realized by employing a slitless scheme. A scintillating screen (LANEX Fast back, LANEX-FB)--camera system allowed faster than 1 Hz operation and evaluation of the spatial properties of e-beams. The design provided sufficient resolution for the whole range of the ESM (below 5% for beams with 2 mrad divergence). The calibration between light yield from LANEX-FB and total charge, and a study on the electron energy dependence (0.071 to 1.23 GeV) of LANEX-FB were performed at the Advanced light source (ALS), Lawrence Berkeley National Laboratory (LBNL). Using this calibration data, the developed ESM provided a charge measurement as well. The production of high quality electron beams up to 1 GeV from a centimeter-scale accelerator was demonstrated. The experiment used a 310 {micro}m diameter gas-filled capillary discharge waveguide that channeled relativistically-intense laser pulses (42 TW, 4.5 x 10{sup 18} W/cm{sup 2}) over 3.3 centimeters of sufficiently low density ({approx_equal} 4.3 x 10{sup 18}/cm{sup 3}) plasma. Also demonstrated was stable self-injection and acceleration at a beam energy of {approx_equal} 0.5 GeV by using a 225 {micro}m diameter capillary. Relativistically-intense laser pulses (12 TW, 1.3 x 10{sup 18}W/cm{sup 2}) were guided over 3.3 centimeters of low density ({approx_equal} 3.5 x 10{sup 18}/cm{sup 3}) plasma in this experiment. A statistical analysis of the CDG-LWFAs performance was carried out. By taking advantage of the high repetition rate experimental system, several thousands of shots were taken in a broad range of the laser and plasma parameters. An analysis program was developed to sort and select the data by specified parameters, and then to evaluate performance statistically. The analysis suggested that the generation of GeV-level beams comes from a highly unstable and regime. By having the plasma density slightly above the threshold density for self injection, (1) the longest dephasing length possible was provided, which led to the generation of high energy e-beams, and (2) the number of electrons injected into the wakefield was kept small, which led to the generation of high quality (low energy spread) e-beams by minimizing the beam loading effect on the wake. The analysis of the stable half-GeV beam regime showed the requirements for stable self injection and acceleration. A small change of discharge delay t{sub dsc}, and input energy E{sub in}, significantly affected performance. The statistical analysis provided information for future optimization, and suggested possible schemes for improvement of the stability and higher quality beam generation. A CDG-LWFA is envisioned as a construction block for the next generation accelerator, enabling significant cost and size reductions.
Nakamura, Kei
A 125GeV Higgs Boson and Muon g-2 in More Generic Gauge Mediation
Recently, the ATLAS and CMS collaborations reported exciting hints of a Standard Model-like Higgs boson with a mass around 125GeV. A Higgs boson this heavy is difficult to realize in conventional models of gauge mediation. Here we revisit the lightest Higgs boson mass in "more generic gauge mediation," where the Higgs doublets mix with the messenger doublets. We show that a Higgs boson mass around 125GeV can be realized in more generic gauge mediation models, even for a relatively light gluino mass ~1TeV. We also show that the muon anomalous magnetic moment can be within 1sigma of the experimental value for these models, even when the Higgs boson is relatively heavy. We also discuss the LHC constraints and the prospects of discovery.
Evans, Jason L; Shirai, Satoshi; Yanagida, Tsutomu T
Beam Physics for the 12 GeV CEBAF Upgrade Project
Beam physics aspects of the 12 GeV Upgrade of CEBAF are presented. The CEBAF Upgrade to 12 GeV is achieved via 5.5 recirculations through the linacs, and the installation of 10 new high-gradient cryomodules. A new experimental hall, Hall D, is envisioned at the end of North Linac. Simulation results for straight-through and recirculated injectors are summarized and compared. Beam transport designs are discussed and evaluated with respect to matching and beam breakup (BBU) optimization. Effects of synchrotron radiation excitation on the beam properties are calculated. BBU simulations and derived specifications for the damping of higher order modes of the new 7-cell cavities are presented. The energies that provide longitudinal polarization in multiple experimental halls simultaneously are calculated. Finally, a detailed optics design for the Hall D transport line has been obtained.
L. Merminga; J. F. Benesch; S.A. Bogacz; Y.-C. Chao; A. Freyberger; J.M. Grames; L. Harwood; R. Kazimi; G.A. Krafft; M. Spata; M. Tiefenback; M. Wiseman; B.C. Yunn; Y. Zhang
An overview of the planned Jefferson Lab 12-GeV helium refrigerator upgrade
In February 2006, Jefferson Laboratory in Newport News, VA, received � Critical Decision 1� (CD-1) approval to proceed with the engineering and design of the long anticipated upgrade to increase the beam energy of CEBAF, the Continuous Electron Beam Accelerator Facility, from 6 GeV to 12 GeV. This will require the installation of 10 new cryomodules, and additional 2.1-K refrigeration beyond the available 4600 W to handle the increased heat loads. Additionally, a new experimental hall, Hall D, is planned that will require the installation of a small, available refrigerator. This paper will present an overview of the integration of the new proposed refrigeration system into CEBAF, the installation of the available refrigerator for Hall D, and includes planned work scope, current schedule plans and project status.
Arenius, Dana; Creel, Jonathan; Dixon, Kelly; Ganni, Venkatarao; Knudsen, Peter; Sidi-Yekhlef, Ahmed; Wright, Mathew
MeV-GeV emission from neutron-loaded short gamma-ray burst jets
Recent discovery of the afterglow emission from short gamma-ray bursts suggests that binary neutron star or black hole-neutron star binary mergers are the likely progenitors of these short bursts. The accretion of neutron star material and its subsequent ejection by the central engine implies a neutron-rich outflow. We consider here a neutron-rich relativistic jet model of short bursts, and investigate the high energy neutrino and photon emission as neutrons and protons decouple from each other. We find that upcoming neutrino telescopes are unlikley to detect the 50 GeV neutrinos expected in this model. For bursts at z~0.1, we find that GLAST and ground-based Cherenkov telescopes should be able to detect prompt 100 MeV and 100 GeV photon signatures, respectively, which may help test the neutron star merger progenitor identification.
Soebur Razzaque; Peter Meszaros
Measurement of the g factor of the 4{sub 1}{sup +} state in {sup 70}Ge
The g factors of the 2{sub 1}{sup +},3{sub 1}{sup -}, and 4{sub 1}{sup +} states of {sup 70}Ge have been measured by the transient field technique. The measured value, g(4{sub 1}{sup +})=+0.5(2) is in good agreement with the results of shell-model calculations within the full fp configuration space and with the nuclear g-factor systematics in this region. The measured g(4{sub 1}{sup +}) is consistent with the recently reported positive g(4{sub 1}{sup +}) value for {sup 68}Zn, the N=38 isotone of {sup 70}Ge. The determination of the logarithmic slope of the particle-{gamma} angular correlations is discussed for two typical arrangements of transient field experiments.
Boutachkov, P.; Escuderos, A.; Kumbartzki, G.; Benczer-Koller, N.; Stefanova, E.; Sharon, Y. Y.; Zamick, L. [Department of Physics and Astronomy, Rutgers University, New Brunswick, New Jersey 08903 (United States); Robinson, S. J. Q. [Geology and Physics Department, University of Southern Indiana, Evansville, Indiana 47712 (United States); McCutchan, E. A.; Werner, V.; Ai, H.; Heinz, A.; Qian, J.; Williams, E.; Winkler, R. [Wright Nuclear Structure Laboratory, Yale University, New Haven, Connecticut 06520 (United States); Garnsworthy, A. B.; Thompson, N. J. [Department of Physics, University of Surrey, Guildford, GU2 7XH (United Kingdom); Guerdal, G. [Department of Physics and Astronomy, Rutgers University, New Brunswick, New Jersey 08903 (United States); Wright Nuclear Structure Laboratory, Yale University, New Haven, Connecticut 06520 (United States); Clark University, Worcester, Massachusetts 01610 (United States)
Nanospheres of a New Intermetalic FeSn5 Phase: Synthesis Magnetic Properties and Anode Performance in Li-ion Batteries
We synthesized monodisperse nanospheres of an intermetallic FeSn{sub 5} phase via a nanocrystal-conversion protocol using preformed Sn nanospheres as templates. This tetragonal phase in P4/mcc space group, along with the defect structure Fe{sub 0.74}Sn{sub 5} of our nanospheres, has been resolved by synchrotron X-ray diffraction and Rietveld refinement. Importantly, FeSn{sub 5}, which is not yet established in the Fe-Sn phase diagram, exhibits a quasi-one dimensional crystal structure along the c-axis, thus leading to interesting anisotropic thermal expansion and magnetic properties. Magnetization measurements indicate that nanospheres are superparamagnetic above the blocking temperature T{sub B} = 300 K, which is associated with the higher magnetocrystalline anisotropy constant K = 3.33 kJ m{sup -3}. The combination of the magnetization measurements and first-principles density functional theory calculations reveals the canted antiferromagnetic nature with significant spin fluctuation in lattice a-b plane. The low Fe concentration also leads Fe{sub 0.74}Sn{sub 5} to enhanced capacity as an anode in Li ion batteries.
X Wang; M Feygenson; H Chen; C Lin; W Ku; J Bai; M Aronson; T Tyson; W Han
Development of Model-Based Controls for GE's Gasifier and Syngas Cooler
Model-Based Controls Model-Based Controls for GE's Gasifier and Syngas Cooler Background The U.S. Department of Energy (DOE) National Energy Technology Laboratory (NETL) develops affordable and clean energy from coal and other fossil fuels to secure a sustainable energy economy. To further this mission, NETL funds research and development of advanced sensor and control technologies that can function under the extreme operating conditions often found in advanced power systems, particularly
Compare 100 GeV/n Au Run 2010 with Run 2007
With the very successful commissioning of the vertical stochastic cooling in 100 GeV/n Au Run 2010, the IBS (intra-beam scattering) is no longer the dominant factor in terms of the integrated luminosity. A new luminosity model is needed, where the beam intensity lifetime is more important and the burn-off needs to be accounted for. Toward this goal, a brief review of the Run 2010, compared with Run 2007, is presented.
Zhang, S.Y.
Some issues on the RF system in the 3 GeV Fermilab pre-booster
Some issues are presented on the rf system in the future Fermilab prebooster, which accelerates 4 bunches each containing 0.25 x 10{sub 14} protons from 1 to 3 GeV kinetic energy. The problem of beam loading is discussed. The proposal of having a non-tunable fixed-frequency rf system is investigated. Robinson's criteria for phase stability are checked and possible Robinson instability growth is computed.
Ng, K. Y.
SiGe analog AGC circuit for an 802.11a WLAN direct conversion receiver
This brief presents a baseband automatic gain control (AGC) circuit for an IEEE 802.11a wireless local area network (WLAN) direct conversion receiver. The whole receiver is to be fully integrated in a low-cost 0.25-�m 75-GHz SiGe bipolar complementary ... Keywords: bipolar complementary metal-oxide-semiconductor (BiCMOS) integrated circuits, feedforward systems, gain control, peak detector, variable gain amplifier (VGA), wireless local-area network (WLAN)
J. P. Alegre; S. Celma; B. Calvo; N. Fiebig; S. Halder
New phases of D ge 2 current and diffeomorphism algebras in particle physics
We survey some global results and open issues of current algebras and their canonical field theoretical realization in D {ge} 2 dimensional spacetime. We assess the status of the representation theory of their generalized Kac-Moody and diffeomorphism algebras. Particular emphasis is put on higher dimensional analogs of fermi-bose correspondence, complex analyticity and the phase entanglements of anyonic solitons with exotic spin and statistics. 101 refs.
Tze, Chia-Hsiung.
Ge(Li) low level in-situ gamma-ray spectrometer applications
Currently a Ge(Li) spectrometer is being employed for in-situ measurements of radionuclides contained in soil. This is being done at nuclear reactor sites and in complex radionuclide fields at the Nevada Test Site. The methodology and precision of the in-situ spectrometric technique was previously established for analysis of radionuclides in soil. Application of the technique to gaseous and liquid effluents containing radionuclides has shown a great deal of promise. (auth)
Phelps, P.L.; Anspaugh, L.R.; Roth, S.J.; Huckabay, G.W.; Sawyer, D.L.
Nonintrusive Emittance Measurement of 1GeV H- Beam with a Laser
A laser wire based transverse phase space measurement system has been developed at the Spallation Neutron Source (SNS). The system allows a nonintrusive measurement of 1GeV hydrogen ion (H-) beam at the high energy beam transport (HEBT). This paper describes the design, installation, and measurement performance of the system. Major technical challenges in the implementation and commissioning of the nonintrusive phase space diagnostics at high brightness particle accelerator facilities are discussed.
Liu, Yun [ORNL; Aleksandrov, Alexander V [ORNL; Long, Cary D [ORNL; Menshov, Alexander A [ORNL; Pogge, James R [ORNL; Webster, Anthony W [ORNL; Zhukov, Alexander P [ORNL
High-transition-temperature superconductors in the Nb-Al-Ge system
The patent describes superconducting materials of the nominal composition Nb(x)Al(y)Ge(l-y), where x is in the range of 1.9 to 2.8 and y is in the range of 0.5 to 0.9, having transition temperatures in the 19 -20K. range which are readily produced by annealing arc-melted compositions, or cold-pressed, heat-treated compositions at moderate temperatures for reasonably long times (about 50 hours).
Detection of optical linear polarization in the SN2006aj/GRB060218 non-spherical expansion
We have performed optical polarimetric observations of the SN2006aj associated to the gamma-ray burst (GRB) of February 18, 2006, GRB060218 that provide information on its expansion geometry. The data were acquired in the R-band with the 0.7m telescope of Crimea, 2.5m Nordic Optical Telescope and the 2.2m of Calar Alto. We report the detection of linear polarization between 3 and 39 days after the gamma-ray event (t-t_0). This represents the first polarization detection of a Ic supernova (SN) associated to an X-ray flash. Our data exhibit a degree of linear polarization (P) around P~4% at t-t_0 ~ 3-5 days, followed by a constant polarization phase with P~1.4% at 13.7 < t-t_0 < 39 days. Our data suggest a decay in P, and more interestingly, show a position angle (\\theta) rotation of ~100 degrees comparing data taken before and after the R-band lightcurve peak. The reported polarization measurements can be explained by the evolution of an asymmetric SN expansion. We discuss on several ingredients that cou...
Gorosabel, J; Castro-Tirado, A J; Guziy, S; Larionova, L; Olmo, A D; Mart�nez, M A; Cepa, J; Cedres, B; De Postigo, A U; Jelinek, M; Bogdanov, O; Llorente, A
Detection of optical linear polarization in the SN2006aj/XRF060218 non-spherical expansion
We have performed optical polarimetric observations of the SN2006aj associated to the X-ray flash (XRF) of February 18, 2006, XRF060218 that provide information on its expansion geometry. The data were acquired in the R-band with the 0.7m telescope of Crimea, 2.5m Nordic Optical Telescope and the 2.2m of Calar Alto. We report the detection of linear polarization between 3 and 39 days after the gamma-ray event (t-t_0). This represents the first polarization detection of a Ic supernova (SN) associated to an XRF. Our data exhibit a degree of linear polarization (P) around P~4% at t-t_0 ~ 3-5 days, followed by a constant polarization phase with P~1.4% at 13.7 < t-t_0 < 39 days. Our data suggest a decay in P, and more interestingly, show a position angle (\\theta) rotation of ~100 degrees comparing data taken before and after the R-band lightcurve peak. The reported polarization measurements can be explained by the evolution of an asymmetric SN expansion. We discuss on several ingredients that could account for the observed \\theta rotation.
J. Gorosabel; V. Larionov; A. J. Castro-Tirado; S. Guziy; L. Larionova; A. Del Olmo; M. A. Martinez; J. Cepa; B. Cedres; A. de Ugarte Postigo; M. Jelinek; O. Bogdanov; A. LLorente
SN 2010ay is a Luminous and Broad-lined Type Ic Supernova within a Low-metallicity Host Galaxy
[abridged] We report on our serendipitous pre-discovery detection and detailed follow-up of the broad-lined Type Ic supernova SN 2010ay at z\\approx0.067 imaged by the Pan-STARRS1 3{\\pi} survey just \\sim3 days after explosion. We estimate the explosion date and the peak luminosity of the SN, MR\\approx-20.2 mag, significantly brighter than known GRB-SNe and one of the most luminous SNe Ic ever discovered. We measure the photospheric expansion velocity of the explosion, v_ph\\approx19.2x10^3 km/s at \\sim40 days after explosion. In comparison with other broad-lined SNe, the characteristic velocity of SN 2010ay is 2-5x higher and similar to the measurements for GRB-SNe at comparable epochs. Moreover the velocity declines two times slower than other SNe Ic-BL and GRB-SNe. Assuming that the optical emission is powered by radioactive decay, the peak magnitude implies the synthesis of an unusually large mass of 56 Ni, M_Ni=0.9+0.2 M_solar. Our modeling of the light-curve points to a total ejecta mass, Mej\\approx4.7M_so...
Sanders, Nathan E; Valenti, S; Chomiuk, L; Berger, E; Smartt, S; Hurley, K; Barthelmy, S D; Chornock, R; Foley, R J; Levesque, E M; Narayan, G; Kirshner, R P; Botticella, M T; Briggs, M S; Connaughton, V; Terada, Y; Gehrels, N; Golenetskii, S; Mazets, E; Cline, T; von Kienlin, A; Boynton, W; Chambers, K C; Grav, T; Heasley, J N; Hodapp, K W; Jedicke, R; Kaiser, N; Kudritzki, R -P; Luppino, G A; Lupton, R H; Magnier, E A; Monet, D G; Morgan, J S; Onaka, P M; Price, P A; Stubbs, C W; Tonry, J L; Wainscoat, R J; Waterson, M F
Consistent dark matter interpretation for CoGeNT and DAMA/LIBRA
In this paper, we study the recent excess of low-energy events observed by the CoGeNT Collaboration and the annual modulation reported by the DAMA/LIBRA Collaboration, and discuss whether these signals could both be the result of the same elastically scattering dark matter particle. We find that, without channeling but when taking into account uncertainties in the relevant quenching factors, a dark matter candidate with a mass of approximately 7 GeV and a cross section with nucleons of {sigma}{sub DM-N{approx}}2x10{sup -4} pb (2x10{sup -40} cm{sup 2}) could account for both of these observations. We also comment on the events recently observed in the oxygen band of the CRESST experiment and point out that these could potentially be explained by such a particle. Lastly, we compare the region of parameter space favored by DAMA/LIBRA and CoGeNT to the constraints from XENON10, XENON100, and CDMS (Si) and find that these experiments cannot at this time rule out a dark matter interpretation of these signals.
Hooper, Dan [Center for Particle Astrophysics, Fermi National Accelerator Laboratory, Batavia, Illinois 60510 (United States); Department of Astronomy and Astrophysics, University of Chicago, Chicago, Illinois 60637 (United States); Collar, J. I. [Enrico Fermi Institute, KICP and Department of Physics, University of Chicago, Chicago, Illinois 60637 (United States); Hall, Jeter [Center for Particle Astrophysics, Fermi National Accelerator Laboratory, Batavia, Illinois 60510 (United States); McKinsey, Dan [Department of Physics, Yale University, New Haven, Connecticut 06520 (United States); Kelso, Christopher M. [Department of Physics, University of Chicago, Chicago, Illinois 60637 (United States)
4. pi. physics. [/sup 40/Ar + KCl, 0. 4 to 1. 8 GeV/A
Exclusive ..pi../sup -/ and charged-particle production in collisions of /sup 40/Ar on KCl are studied at incident energies from 0.4 to 1.8 GeV/A. The correlation between the ..pi../sup -/ and the total charged particle multiplicity confines the reaction along a narrow ridge with no exotic islands of pion production. For high multiplicities the system reaches the total disintegration of target and projectile into singly charged fragments and pions. Every 200 MeV/A datum was taken with a central and inelastic trigger. For central collisions the mean ..pi../sup -/ multiplicity increases linearly with the bombarding energy with no marked discontinuities due to the ..delta..(3,3) resonance. At 1.8 GeV/A evidence for nonthermal ..pi../sup -/ production in central collisions is found. The total c.m. energy in ..pi../sup -/ shows linear dependence on the ..pi../sup -/ multiplicity with a slope of epsilon = 300 MeV/..pi../sup -/. Strange particle production in the central collision of 1.8 GeV/A Ar on KCl is seen. 8 figures.
Sandoval, A.
Photo-oxidation of Ge Nanocrystals: Kinetic Measurements by InSitu Raman Spectroscopy
Ge nanocrystals are formed in silica by ion beam synthesis and are subsequently exposed by selective HF etching of the silica. Under ambient conditions, the exposed nanocrystals are stable after formation of a protective native oxide shell of no more than a few monolayers. However, under visible laser illumination at room temperature and in the presence of O{sub 2}, the nanocrystals rapidly oxidize. The oxidation rate was monitored by measuring the Raman spectra of the Ge nanocrystals in-situ. The intensity ratio of the anti-Stokes to the Stokes line indicated that no significant laser-induced heating of illuminated nanocrystals occurs. Therefore, the oxidation reaction rate enhancement is due to a photo-chemical process. The oxidation rate varies nearly linearly with the logarithm of the laser intensity, and at constant laser intensity the rate increases with increasing photon energy. These kinetic measurements, along with the power dependencies, are described quantitatively by an electron active oxidation mechanism involving tunneling of optically excited electrons through the forming oxide skin and subsequent transport of oxygen ions to the Ge nanocrystal surface.
Sharp, I.D.; Xu, Q.; Yuan, C.W.; Beeman, J.W.; Ager III, J.W.; Chrzan, D.C.; Haller, E.E.
ON THE ORIGIN OF > 10 GeV PHOTONS IN GAMMA-RAY BURST AFTERGLOWS
Fermi/LAT has detected long-lasting high-energy photons (>100 MeV) from gamma-ray bursts (GRBs), with the highest energy photons reaching about 100 GeV. One proposed scenario is that they are produced by high-energy electrons accelerated in GRB forward shocks via synchrotron radiation. We study the maximum synchrotron photon energy in this scenario, considering the properties of the microturbulence magnetic fields behind the shock, as revealed by recent particle-in-cell simulations and theoretical analyses of relativistic collisionless shocks. Due to the small-scale nature of the microturbulent magnetic field, the Bohm acceleration approximation, in which the scattering mean free path is equal to the particle Larmor radius, breaks down at such high energies. This effect leads to a typical maximum synchrotron photon of a few GeV at 100 s after the burst and this maximum synchrotron photon energy decreases quickly with time. We show that the fast decrease of the maximum synchrotron photon energy leads to a fast decay of the synchrotron flux. The 10-100 GeV photons detected after the prompt phase cannot be produced by the synchrotron mechanism. They could originate from the synchrotron self-Compton emission of the early afterglow if the circumburst density is sufficiently large, or from the external inverse Compton process in the presence of central X-ray emission, such as X-ray flares and prompt high-latitude X-ray emission.
Wang Xiangyu; Liu Ruoyu [School of Astronomy and Space Science, Nanjing University, Nanjing 210093 (China); Lemoine, Martin [Institut d'Astrophysique de paris, CNRS, UPMC, 98 bis boulevard Arago, F-75014 Paris (France)
Study of plutonium disposition using existing GE advanced Boiling Water Reactors
The end of the cold war and the resulting dismantlement of nuclear weapons has resulted in the need for the US to dispose of 50 to 100 metric tons of excess of plutonium in a safe and proliferation resistant manner. A number of studies, including the recently released National Academy of Sciences (NAS) study, have recommended conversion of plutonium into spent nuclear fuel with its high radiation barrier as the best means of providing permanent conversion and long-term diversion resistance to this material. The NAS study ``Management and Disposition of Excess Weapons Plutonium identified Light Water Reactor spent fuel as the most readily achievable and proven form for the disposition of excess weapons plutonium. The study also stressed the need for a US disposition program which would enhance the prospects for a timely reciprocal program agreement with Russia. This summary provides the key findings of a GE study where plutonium is converted into Mixed Oxide (MOX) fuel and a typical 1155 MWe GE Boiling Water Reactor (BWR) is utilized to convert the plutonium to spent fuel. A companion study of the Advanced BWR has recently been submitted. The MOX core design work that was conducted for the ABWR enabled GE to apply comparable fuel design concepts and consequently achieve full MOX core loading which optimize plutonium throughput for existing BWRs.
Early UV/Optical Emission of The Type Ib SN 2008D
We propose an alternative explanation for the post-breakout emission of SN 2008D associated with the X-ray transient 080109. Observations of this object show a very small contrast of 0.35 dex between the light-curve minimum occurring soon after the breakout, and the main luminosity peak that is due to radioactive heating of the ejecta. Hydrodynamical models show that the cooling of a shocked Wolf-Rayet star leads to a much greater difference (> 0.9 dex). Our proposed scenario is that of a jet produced during the explosion which deposits 56Ni-rich material in the outer layers of the ejecta. The presence of high-velocity radioactive material allows us to reproduce the complete luminosity evolution of the object. Without outer 56Ni it could be possible to reproduce the early emission purely from cooling of the shocked envelope by assuming a larger progenitor than a Wolf-Rayet star, but that would require an initial density structure significantly different from what is predicted by stellar evolution models. Anal...
Bersten, Melina C; Tominaga, Nozomu; Benvenuto, Omar G; Nomoto, Ken'ichi
Reduce Nb3Sn Strand Deformation when Fabricating High Jc Rutherford Cables
During Phase I, our efforts were to reduce subelements deformation when fabricating Nb3Sn Rutherford cables. Our first focus is on 217-sublement tube type strand. We successfully made a few billets in �?�?�?¾�?¢�?�?�? OD tube with different Cu spacing between subelements, and supplied the strands to Fermi Lab for cabling. Through the rolling test characterization, these types of strands did not have enough bonding between subelements to withstand the deformation. We saw copper cracking between subelements in the deformed strands. We scaled up the billet from �?�?�?¾�?¢�?�?�? OD to 1.5�?¢�?�?�? OD, and made two billets. This greatly improves the bonding. There is no copper cracking in the deformed strands when we scaled up the diameter of the billets. Fermi Lab successfully made cables using one of this improved strands. In their cables, no Cu cracking and no filament bridging occurred. We also successfully made a couple of billets with hex OD and round ID subelements for 61-subelement restack. Due to the lack of bonding, we could not judge its cabling property properly. But we know through this experiment, we could keep the Nb round, once we select the proper Cu spacing.
Effect of nonstoichiometry on the electrophysical properties of the layered compounds Ge{sub 3}Bi{sub 2}Te{sub 6} and GeBi{sub 2}Te{sub 4}
The objective of this work was to investigate the effect of deviation from stoichiometry on the electrophysical properties (electrical and thermal conductivity, thermoelectric power, and carrier concentration) of the ternary layered semiconducting compounds Ge{sub 3{plus_minus}{delta}1}Bi{sub 2+{delta}2}Te{sub 6+{delta}3} and Ge{sub 1{plus_minus}{delta}3}, which are promising for use in thermoelectric converters.The electrophysical properties were measured at 300 K. The Ge{sub 1-{delta}1}Bi{sub 2+{delta}3} alloys were studied by powder X-ray diffraction analysis on a DRON UM-1 diffractometer (CoK{sub {alpha}} radiation). It was found that Ge{sub 3{plus_minus}{delta}1} Bi{sub 2+{delta}2}Te{sub 6{plus_minus}{delta}3} is a nonstoichiometric phase with p-type conductivity throughout the {delta}{sub 1}, {delta}{sub 2}, and {delta}{sub 3} ranges examined. Our results suggest that cation vacancies are likely to be the dominant nonstoichiometric defects responsible for the high concentration of holes. The conductivity of Ge{sub 1{plus_minus}{delta}1}Bi{sub 2}Te{sub 4} changes from the p-type in the Ge-deficient alloys to the n-type in the Gerich alloys.
Shelimova, L.E.; Karpinskii, O.G.; Avilov, E.S.; Kretova, M.A.; Lubman, C.U. [Baikov Institute of Metallurgy, Moscow (Russian Federation)
Measurement of J/? Azimuthal Anisotropy in Au+Au Collisions at ?s[subscript NN]=200??GeV
The measurement of J/? azimuthal anisotropy is presented as a function of transverse momentum for different centralities in Au+Au collisions at ?s[subscript NN]=200??GeV. The measured J/? elliptic flow is consistent with ...
Light neutralino dark matter with a very light Higgs for CoGeNT and DAMA/LIBRA data
Recently, the CoGeNT collaboration reported the WIMP candidate signal events exceeding the known backgrounds where the light WIMP with large cross section is supported. Motivated by this issue, we analyze a light neutralino dark matter scenario with a very light CP-even Higgs mediation in the elastic scattering process, which provides the mass and direct detection cross section to explain the CoGeNT result. To be compatible with the result of LEP experiments, the light CP-even Higgs is favored to be in 9 to 10 GeV. Such a scenario can be realized in the "Beyond the MSSM" context. The relic abundance consistent with the WMAP result can be obtained when twice of neutralino mass is close to the light Higgs mass via the resonance enhancement of the annihilation cross section. As a result, the neutralino mass is predicted to be at around 5 to 6 GeV.
Kyu Jung Bae; Hyung Do Kim; Seodong Shin
New Electron Beam-Dump Experiments to Search for MeV to few-GeV Dark Matter
In a broad class of consistent models, MeV to few-GeV dark matter interacts with ordinary matter through weakly coupled GeV-scale mediators. We show that a suitable meter-scale (or smaller) detector situated downstream of an electron beam-dump can sensitively probe dark matter interacting via sub-GeV mediators, while B-factory searches cover the 1-5 GeV range. Combined, such experiments explore a well-motivated and otherwise inaccessible region of dark matter parameter space with sensitivity several orders of magnitude beyond existing direct detection constraints. These experiments would also probe invisibly decaying new gauge bosons ("dark photons") down to kinetic mixing of \\epsilon ~ 10^{-4}, including the range of parameters relevant for explaining the (g-2)_{\\mu} discrepancy. Sensitivity to other long-lived dark sector states and to new milli-charge particles would also be improved.
Eder Izaguirre; Gordan Krnjaic; Philip Schuster; Natalia Toro
SiGe receiver front ends and flip-chip integrated wideband antennas for millimeter-wave passive imaging
SiGe wideband 77-GHz and 94-GHz front end receivers with integrated antennas for passive imaging have been designed and characterized. These front end systems exhibit wideband performance with the highest gain and lowest ...
Powell, Johnna, 1980-
Performance improvement of Ge-Sb-Te material by GaSb doping for phase change memory
Effects of GaSb doping on phase change characteristics of Ge-Sb-Te material are investigated by in situ resistance and x-ray diffraction measurement, optical spectroscopy, and x-ray photoelectron spectroscopy. The crystallization temperature and data retention of Ge-Sb-Te material increase significantly by the addition of GaSb, which results from the high thermal stability of amorphous GaSb. In addition, GaSb-doped Ge-Sb-Te material exhibits faster crystallization speed due to the change in electronic states as a result of the formation of chemical bonds with Ga element. Incorporation of GaSb is highly effective way to enhance the comprehensive performance of Ge-Sb-Te material for phase change memory.
Lu, Yegang [State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China) [State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211 (China); Graduate School of Chinese Academy of Sciences, Beijing 100049 (China); Zhang, Zhonghua; Song, Sannian; Cheng, Limin; Song, Zhitang [State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)] [State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Shen, Xiang; Wang, Guoxiang; Dai, Shixun [Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211 (China)] [Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211 (China)
Photon and neutral pion production in Au plus Au collisions at root s(NN)=130 GeV
We report inclusive photon measurements about midrapidity (ygammagamma decay channel. The fractional contribution of the pi(0)-->gammagamma decay to the inclusive photon spectrum decreases by 20%+/-5% between p(t)=1.65 GeV/c and p(t)=2.4 GeV/c in the most central events, indicating that relative to pi(0)-->gammagamma decay the contribution of other photon sources is substantially increasing.
Adams, J.; Adler, C.; Aggarwal, MM; Ahammed, Z.; Amonett, J.; Anderson, BD; Anderson, M.; Arkhipkin, D.; Averichev, GS; Badyal, SK; Balewski, J.; Barannikova, O.; Barnby, LS; Baudot, J.; Bekele, S.; Belaga, VV; Bellwied, R.; Berger, J.; Bezverkhny, BI; Bhardwaj, S.; Bhaskar, P.; Bhati, AK; Bichsel, H.; Billmeier, A.; Bland, LC; Blyth, CO; Bonner, BE; Botje, M.; Boucham, A.; Brandin, A.; Bravar, A.; Cadman, RV; Cai, XZ; Caines, H.; Sanchez, MCD; Carroll, J.; Castillo, J.; Castro, M.; Cebra, D.; Chaloupka, P.; Chattopadhyay, S.; Chen, HF; Chen, Y.; Chernenko, SP; Cherney, M.; Chikanian, A.; Choi, B.; Christie, W.; Coffin, JP; Cormier, TM; Cramer, JG; Crawford, HJ; Das, D.; Das, S.; Derevschikov, AA; Didenko, L.; Dietel, T.; Dong, X.; Draper, JE; Du, F.; Dubey, AK; Dunin, VB; Dunlop, JC; Majumdar, MRD; Eckardt, V.; Efimov, LG; Emelianov, V.; Engelage, J.; Eppley, G.; Erazmus, B.; Estienne, M.; Fachini, P.; Faine, V.; Faivre, J.; Fatemi, R.; Filimonov, K.; Filip, P.; Finch, E.; Fisyak, Y.; Flierl, D.; Foley, KJ; Fu, J.; Gagliardi, Carl A.; Ganti, MS; Gutierrez, TD; Gagunashvili, N.; Gans, J.; Gaudichet, L.; Germain, M.; Geurts, F.; Ghazikhanian, V.; Ghosh, P.; Gonzalez, JE; Grachov, O.; Grigoriev, V.; Gronstal, S.; Grosnick, D.; Guedon, M.; Guertin, SM; Gupta, A.; Gushin, E.; Hallman, TJ; Hardtke, D.; Harris, JW; Heinz, M.; Henry, TW; Heppelmann, S.; Herston, T.; Hippolyte, B.; Hirsch, A.; Hjort, E.; Hoffmann, GW; Horsley, M.; Huang, HZ; Huang, SL; Humanic, TJ; Igo, G.; Ishihara, A.; Jacobs, P.; Jacobs, WW; Janik, M.; Johnson, I.; Jones, PG; Judd, EG; Kabana, S.; Kaneta, M.; Kaplan, M.; Keane, D.; Kiryluk, J.; Kisiel, A.; Klay, J.; Klein, SR; Klyachko, A.; Koetke, DD; Kollegger, T.; Konstantinov, AS; Kopytine, M.; Kotchenda, L.; Kovalenko, AD; Kramer, M.; Kravtsov, P.; Krueger, K.; Kuhn, C.; Kulikov, AI; Kumar, A.; Kunde, GJ; Kunz, CL; Kutuev, RK; Kuznetsov, AA; Lamont, MAC; Landgraf, JM; Lange, S.; Lansdell, CP; Lasiuk, B.; Laue, F.; Lauret, J.; Lebedev, A.; Lednicky, R.; Leontiev, VM; LeVine, MJ; Li, C.; Li, Q.; Lindenbaum, SJ; Lisa, MA; Liu, F.; Liu, L.; Liu, Z.; Liu, QJ; Ljubicic, T.; Llope, WJ; Long, H.; Longacre, RS; Lopez-Noriega, M.; Love, WA; Ludlam, T.; Lynn, D.; Ma, J.; Ma, YG; Magestro, D.; Mahajan, S.; Mangotra, LK; Mahapatra, DP; Majka, R.; Manweiler, R.; Margetis, S.; Markert, C.; Martin, L.; Marx, J.; Matis, HS; Matulenko, YA; McShane, TS; Meissner, F.; Melnick, Y.; Meschanin, A.; Messer, M.; Miller, ML; Milosevich, Z.; Minaev, NG; Mironov, C.; Mishra, D.; Mitchell, J.; Mohanty, B.; Molnar, L.; Moore, CF; Mora-Corral, MJ; Morozov, V.; de Moura, MM; Munhoz, MG; Nandi, BK; Nayak, SK; Nayak, TK; Nelson, JM; Nevski, P.; Nikitin, VA; Nogach, LV; Norman, B.; Nurushev, SB; Odyniec, G.; Ogawa, A.; Okorokov, V.; Oldenburg, M.; Olson, D.; Paic, G.; Pandey, SU; Pal, SK; Panebratsev, Y.; Panitkin, SY; Pavlinov, AI; Pawlak, T.; Perevoztchikov, V.; Peryt, W.; Petrov, VA; Phatak, SC; Picha, R.; Planinic, M.; Pluta, J.; Porile, N.; Porter, J.; Poskanzer, AM; Potekhin, M.; Potrebenikova, E.; Potukuchi, BVKS; Prindle, D.; Pruneau, C.; Putschke, J.; Rai, G.; Rakness, G.; Raniwala, R.; Raniwala, S.; Ravel, O.; Ray, RL; Razin, SV; Reichhold, D.; Reid, JG; Renault, G.; Retiere, F.; Ridiger, A.; Ritter, HG; Roberts, JB; Rogachevski, OV; Romero, JL; Rose, A.; Roy, C.; Ruan, LJ; Sahoo, R.; Sakrejda, I.; Salur, S.; Sandweiss, J.; Savin, I.; Schambach, J.; Scharenberg, RP; Schmitz, N.; Schroeder, LS; Schweda, K.; Seger, J.; Seliverstov, D.; Seyboth, P.; Shahaliev, E.; Shao, M.; Sharma, M.; Shestermanov, KE; Shimanskii, SS; Singaraju, RN; Simon, F.; Skoro, G.; Smirnov, N.; Snellings, R.; Sood, G.; Sorensen, P.; Sowinski, J.; Spinka, H. M.; Srivastava, B.; Stanislaus, S.; Stock, R.; Stolpovsky, A.; Strikhanov, M.; Stringfellow, B.; Struck, C.; Suaide, AAP; Sugarbaker, E.; Suire, C.; Sumbera, M.; Surrow, B.; Symons, TJM; de Toledo, AS; Szarwas, P.; Tai, A.; Takahashi, J.; Tang, AH; Thein, D.; Thomas, JH; Tikhomirov, V.; Tokarev, M.; Tonjes, MB; Trainor, TA; Trentalange, S.; Tribble, Robert E.; Trivedi, MD; Trofimov, V.; Tsai, O.; Ullrich, T.; Underwood, DG; Van Buren, G.; VanderMolen, AM; Vasiliev, AN; Vasiliev, M.; Vigdor, SE; Viyogi, YP; Voloshin, SA; Waggoner, W.; Wang, F.; Wang, G.; Wang, XL; Wang, ZM; Ward, H.; Watson, JW; Wells, R.; Westfall, GD; Whitten, C.; Wieman, H.; Willson, R.; Wissink, SW; Witt, R.; Wood, J.; Wu, J.; Xu, N.; Xu, Z.; Xu, ZZ; Yakutin, AE; Yamamoto, E.; Yang, J.; Yepes, P.; Yurevich, VI; Zanevski, YV; Zborovsky, I.; Zhang, H.; Zhang, HY; Zhang, WM; Zhang, ZP; Zolnierczuk, PA; Zoulkarneev, R.; Zoulkarneeva, J.; Zubarev, AN.
Accelerating Into the Future: From 0 to GeV in a Few Centimeters (LBNL Summer Lecture Series)
Summer Lecture Series 2008: By exciting electric fields in plasma-based waveguides, lasers accelerate electrons in a fraction of the distance conventional accelerators require. The Accelerator and Fusion Research Division's LOASIS program, headed by Wim Leemans, has used 40-trillion-watt laser pulses to deliver billion-electron-volt (1 GeV) electron beams within centimeters. Leemans looks ahead to BELLA, 10-GeV accelerating modules that could power a future linear collider.
Leemans, Wim (LOASIS Program, AFRD)
Synthesis and Characterization of Gd5Si2Ge2-Al Composite for Automobile Applications
This thesis research synthesizes a new class of composite materials and investigates their properties, performance, and potential applications. The new materials that are multi-phase and multifunctional are considered for use in car cooling systems, internal combustion engine waste-heat-power generators, and engine crack healing which are major problems plaguing the auto industry. This research uses primarily experimental approaches to study the magnetocaloric compound, Ge5Si2Ge2 (GSG), that has large strain effects. Such a material was formed into a composite using Al as a substrate. The newly developed composite, GSG-Al, is the first material of its kind that possesses self-healing effects in cracks. X-ray diffraction was used to determine the crystal structures that existed within the material. It is found that the sintering process used to create the composite caused the formation of GdAlGe that is a magnetic compound with a high Curie temperature. The GSG-Al has a wide variety of crystal structures, ranging from face centered cubic for aluminum phases to monoclinic and orthorhombic phases for GSG. The discovery of GdAlGe confirmed that alpha-ThSi-type tetragonal and YAlGe-type orthorhombic crystal structures existed. Transmission electron microscopy (TEM) was used to analyze the wear debris collected during tribo-testing. The debris were also analyzed using energy-dispersive X-ray spectroscopy (EDS) for chemical analysis. The GSG-Al was put through tribological studies at several different temperatures to determine the thermal effects on the composite. The GSG-Al, although found to be ductile, showed high resistance to wear when compared to a common aluminum alloy, Al 6061-T651. The wear rate decreased with increasing temperature when the temperature was increased from the room temperature to 150 degrees C. Results showed that with GSG, the composite did not show cracking common in Al alloys. This was due to the unique thermal expansion properties of the GSG-Al. The phase transformation induced a significant volume expansion in the material and thus a giant strain effect. This research opens new approaches in energy conversion and improving efficiency of automobile engines. The composite developed here is important for future scientific investigation in the area of multifunctional materials as well as materials that exhibit self-healing tendencies.
Barkley, Brady C.
Structural and Magnetothermal Properties of Compounds: Yb5SixGe4-x,Sm5SixGe4-x, EuO, and Eu3O4
The family of R{sub 5}Si{sub x}Ge{sub 4-x} alloys demonstrates a variety of unique physical phenomena related to magneto-structural transitions associated with reversible breaking and reforming of specific bonds that can be controlled by numerous external parameters such as chemical composition, magnetic field, temperature, and pressure. Therefore, R{sub 5}Si{sub x}Ge{sub 4-x} systems have been extensively studied to uncover the mechanism of the extraordinary magneto-responsive properties including the giant magnetoresistance (GMR) and colossal magnetostriction, as well as giant magnetocaloric effect (GMCE). Until now, more than a half of possible R{sub 5}Si{sub x}Ge{sub 4-x} pseudobinary systems have been completely or partially investigated with respect to their crystallography and phase relationships (R = La, Pr, Nd, Gd, Tb, Dy, Er, Lu, Y). Still, there are other R{sub 5}Si{sub x}Ge{sub 4-x} systems (R = Ce, Sm, Ho, Tm, and Yb) that are not studied yet. Here, we report on phase relationships and structural, magnetic, and thermodynamic properties in the Yb{sub 5}Si{sub x}Ge{sub 4-x} and Sm{sub 5}Si{sub x}Ge{sub 4-x} pseudobinary systems, which may exhibit mixed valence states. The crystallography, phase relationships, and physical properties of Yb{sub 5}Si{sub x}Ge{sub 4-x} alloys with 0 {le} x {le} 4 have been examined by using single crystal and powder x-ray diffraction at room temperature, and dc magnetization and heat capacity measurements between 1.8 K and 400 K in magnetic fields ranging from 0 to 7 T. Unlike the majority of R{sub 5}Si{sub x}Ge{sub 4-x} systems studied to date, where R is the rare earth metal, all Yb-based germanide-silicides with the 5:4 stoichiometry crystallize in the same Gd{sub 5}Si{sub 4}-type structure. The magnetic properties of Yb{sub 5}Si{sub x}Ge{sub 4-x} materials are nearly composition-independent, reflecting the persistence of the same crystal structure over the whole range of x from 0 to 4. Both the crystallographic and magnetic property data indicate that Yb{sub 5}Si{sub x}Ge{sub 4-x} alloys are mixed valence systems, in which the majority (60%) of Yb atoms is divalent, while the minority (40%) is trivalent. This finding is supported by recent Moessbauer spectroscopy data.
Kyunghan Ahn
Eleven new compounds in the RE-Cd-Ge systems (RE=Pr, Nd, Sm, Gd-Yb; Y): Crystal chemistry of the RE{sub 2}CdGe{sub 2} series
A large new family of rare-earth metal-cadmium-germanides RE{sub 2}CdGe{sub 2} (RE=Y, Pr, Nd, Sm, Gd-Yb) has been synthesized and structurally characterized. All eleven structures have been established from single-crystal X-ray diffraction data and have been found to belong to the tetragonal Mo{sub 2}FeB{sub 2} structure type (ordered ternary variant of the U{sub 3}Si{sub 2} structure type-space group P4/mbm (No. 127), Z=2; Pearson symbol tP10). The structural variations among the three series of isostructural RE{sub 2}MgGe{sub 2}, RE{sub 2}InGe{sub 2}, and RE{sub 2}CdGe{sub 2} compounds are discussed, as well as the crystal chemistry changes as a function of the decreasing size of the rare-earth metals (lattice constants a=7.176(2)-7.4589(12) A and c=4.1273(14)-4.4356(13) A). The experimental results have been complemented by tight-binding linear muffin-tin orbital (TB-LMTO) electronic structure calculations. - Graphical abstract: More than 300 compounds have been reported to crystallize with the tetragonal U{sub 3}Si{sub 2} structure type, or the Mo{sub 2}FeB{sub 2} structure type, which is its ordered ternary variant. Among them, there are several large RE{sub 2}CdX{sub 2} classes, where the X-elements are typically late transition metals such as Cu, Ni, Au, Pd, Pt, and Rh. The new RE{sub 2}CdGe{sub 2} phases (RE=Y, Pr, Nd, Sm, Gd-Yb) increase the diversity and represent the first cadmium germanides. Highlights: Black-Right-Pointing-Pointer RE{sub 2}CdGe{sub 2} (RE=Y, Pr, Nd, Sm, Gd-Yb) are new ternary germanides. Black-Right-Pointing-Pointer Their structures can be recognized as a 1:1 intergrowth of CsCl- and AlB{sub 2}-like slabs. Black-Right-Pointing-Pointer The Ge atoms are covalently bound into Ge{sub 2} dumbbells. Black-Right-Pointing-Pointer Almost all RE{sub 2}CdGe{sub 2} phases are the first structurally characterized phases in the respective ternary RE-Cd-Ge systems.
Guo Shengping; Meyers, John J.; Tobash, Paul H. [Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716 (United States); Bobev, Svilen, E-mail: firstname.lastname@example.com [Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716 (United States)
A Failed Gamma-Ray Burst with Dirty Energetic Jets Spirited Away? New Implications for the GRB-SN Connection from Supernova 2002ap
(Abridged) SN 2002ap is an interesting event with broad spectral features like the famous SN 1998bw / GRB 980425. Here we examine the recently proposed jet hypothesis from SN 2002ap by a spectropolarimetric observation. We show that jets should be moving at about 0.23c with a jet kinetic energy of ~5 x 10^{50} erg, a similar energy scale to the GRB jets. The weak radio emission from SN 2002ap has been used to argue against the jet hypothesis, but we show that this problem can be avoided. However, the jet cannot be kept ionized because of adiabatic cooling without external photoionization or heating source. We found that only the radioactivity of 56Ni is a possible source, indicating that the jet is formed and ejected from central region of the core collapse. Then we point out that the jet will eventually sweep up enough interstellar medium and generate shocks in a few to 10 years, producing strong radio emission that can be spatially resolved, giving us a clear test for the jet hypothesis. Discussions are given on possible implications for the GRB-SN connection in the case that the jet is real. We suggest existence of two distinct classes of GRBs from similar core-collapse events but by completely different mechanisms. Cosmologically distant GRBs (~10^{50} erg) are collimated jets generated by central activity of core collapses. SN 2002ap could be a failed GRB of this type with a large baryon load. On the other hand, much less energetic ones like GRB 980425 are rather isotropic, which may be produced by hydrodynami