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US 7176144 B1 Abstract Methods of preparing a low-k dielectric material on a substrate are provided. The methods involve using plasma techniques to remove porogen from a precursor layer comprising porogen and a dielectric matrix and to protect the dielectric matrix with a silanol capping agent, resulting in a low-k dielectric matrix. Porogen removal and silanol capping can occur concurrently or sequentially. If performed sequentially, silanol capping is performed without first exposing the dielectric matrix to moisture or ambient conditions.
Claims(41) 1. A method of preparing a low-k dielectric material on a substrate, the method comprising:
providing a precursor layer on said substrate, said layer comprising an organic porogen in a dielectric matrix; and
exposing the precursor layer to a plasma comprising a reducing or oxidizing agent and a silanol capping agent to concurrently remove said porogen from the precursor layer and protect the dielectric matrix with hydrophobic groups.
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providing a precursor layer on said substrate, said layer comprising an organic porogen in a dielectric matrix;
exposing the precursor layer to a plasma to thereby remove said porogen from the precursor layer to create voids within the dielectric matrix; and
after removing said organic porogen, exposing the dielectric matrix to a silanol capping agent, without first exposing the dielectric matrix to moisture or ambient conditions, wherein the the removal and capping operations are performed at different stations in a multistation tool.
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Description This application is a continuation-in-part claiming priority under 35 USC 120 from U.S. patent application Ser. No. 10/404,693 filed Mar. 31, 2003 by Humayun, et al., and titled �METHOD FOR FORMING POROUS FILMS BY POROGEN REMOVAL COMBINED WITH IN SITU SURFACE MODIFICATION.� This application is incorporated herein by reference for all purposes. This application is also related to U.S. patent application Ser. No. 10/672,305, filed Sep. 26, 2003; U.S. patent application Ser. No. 10/672,311, filed Sep. 26, 2003; and U.S. patent application Ser. No. 10/807,680, filed Mar. 23, 2004. This invention relates to methods for preparing porous films using porogen technology. More specifically, the methods involve providing a precursor film comprising porogen and a dielectric matrix and removing the porogen and protecting silanol groups within the dielectric matrix using plasma techniques. The resulting material can be used as a low-k dielectric film in integrated circuits. Discovering ways to minimize the resistance-capacitance (RC) delay of metal interconnects is a primary pursuit within the high performance integrated circuit manufacturing industry. The RC delay is the time it takes a signal to propagate through a metal interconnect as a result of the resistance of the metal lines and the capacitance of the surrounding dielectric. Reducing the RC delay increases the speed of the signal propagation, thereby improving the performance of a device. One approach to reducing RC delay is by using lower resistance metals; for example, copper instead of aluminum. Another approach to reducing RC delay is by reducing the capacitance of the surrounding dielectric by using a material with a low dielectric constant, k. The dielectric constant, k, is an intrinsic property of a material, which determines the electrostatic energy that can be stored within the material. The numerical value k is defined relative to a vacuum, for which k=1, exactly. In IC applications, �low-k� dielectrics are conventionally defined as those materials that have k<�4. This low-k definition comes from the k value of SiO2, the traditional primary IC dielectric material, which has k≈4. Since current technologies involving smaller features sizes are requiring k<4, efforts have been focused on finding materials with lower k than that of SiO2. One widely used means of obtaining a low-k dielectric material is by incorporating carbon or hydrocarbons into a SiO2 material. Since most hydrocarbons have a lower k than SiO2, the resulting carbon-incorporated material has an overall lower k than pure SiO2�typically between 3.1 and 2.5, depending on the amount of carbon added and the type of organic precursor that is used. However, as IC features continue to decrease to smaller and smaller sizes, there is a drive to find materials with even lower k than can be obtained by using the carbon-incorporated SiO2 alone. Currently, the only known way to obtain a usable dielectric with k<2.5 is by using techniques to produce pores or voids in a dielectric material with a dielectric constant k≈2.5 to 4. Since the dielectric constant for air is only slightly higher than that of a vacuum, the resulting porous dielectric will have a significantly decreased k. A common technique for fabricating porous dielectric materials involves the formation of a composite film consisting of two components: a porogen (an organic material, typically a polymer) and a silicon-based dielectric. Once the composite film is formed onto the substrate, the organic porogen component is removed, leaving a porous silicon-based dielectric matrix. There are significant challenges, however, associated with forming a porous dielectric material, particularly in the porogen removal process. A standard technique for porogen removal involves heating the wafer for several hours to thermally degrade and remove the porogen. Another technique involves exposing the wafer to a plasma treatment while heating the wafer. This porogen removal process creates �dangling bonds� (unsaturated SiO- or Si-groups) within the silicon-based dielectric matrix, which when exposed to ambient conditions, will react with moisture to create hydroxyl groups. These hydroxyl groups will in turn adsorb more moisture from the ambient to add water to the silicon-based dielectric matrix. Unfortunately, since water has a dielectric constant of about 80, this significantly increases the overall dielectric constant for the film. What are needed therefore are improved methods for forming low k dielectric materials for integrated circuits. The present invention addresses these needs by providing improved methods of preparing a low-k dielectric material on a substrate. The methods involve providing a precursor layer comprising a hydrocarbon porogen in a dielectric matrix and exposing the precursor layer to a plasma having a silanol capping agent to remove the porogen to create voids within the dielectric matrix and concurrently protect the dielectric matrix with hydrophobic protecting groups. Porogen removal and silanol capping may be performed contemporaneously or sequentially. If performed sequentially, silanol capping is performed without first exposing the dielectric matrix to moisture or ambient conditions. In one embodiment, the methods include the following sequence of operations: (a) providing a precursor layer on said substrate, said layer comprising an organic porogen in a dielectric matrix; and (b) exposing the precursor layer to a plasma comprising a silanol capping agent provided therein to remove said porogen from the precursor layer to create voids within the dielectric matrix and concurrently protect the dielectric matrix with hydrophobic protecting groups. In another embodiment, the methods include (a) providing a precursor layer on said substrate, said layer comprising an organic porogen in a dielectric matrix; and (b) exposing the precursor layer to a plasma to thereby remove said porogen from the precursor layer to create voids within the dielectric matrix; and (c) after removing said organic porogen, exposing the dielectric matrix to a silanol capping agent, without first exposing the dielectric matrix to moisture or ambient conditions. In some embodiments, after (a), the precursor layer is exposed to ultraviolet radiation to remove at least a portion of the porogen before (b). The precursor layer is formed by chemical vapor deposition, plasma-enhanced chemical vapor deposition, a print on process, dip casting, a spin on process, a spray on process or supercritical dielectric infusion in polymer matrix. In some embodiments, the porogen in the precursor layer is a hydrophobic phase of a block copolymer. In preferred embodiments, the dielectric matrix comprises silicon and oxygen, more preferably silicon, oxygen, carbon, and hydrogen. In specific embodiments, the dielectric matrix is derived from at least one of TEOS and MTEOS. Any suitable capping agent can be used. In some embodiments, the silanol capping agent comprises one or more of a silane amine, a disilazane, a chlorosilane, an aldehyde, an alkylsiloxane and an alkyl alkoxysilane. In preferred embodiments, the silanol capping agent comprises one or more of hexamethyldisilazane (HMDS), dimethyldimethoxysilane (DMDMOS), trimethylchlorosilane, and an acetaldehyde. To remove the porogen, the plasma comprises either a reducing gas, such as at least one of hydrogen, ammonia, carbon monoxide and methane, or an oxidizing gas, such as at least one of carbon dioxide, nitrous oxide and oxygen. The plasma may also include nitrogen or unreactive gases such as at least one of nitrogen, argon or helium on their own or as carrier gases. In one approach, the substrate and precursor layer remain under vacuum during the porogen removal and silanol capping operations, and at all times in between. This may be accomplished by performing the removal and capping operations at different stations in a multistation tool. The precursor films may be either exposed directly to the plasma such as by using a planar or barrel type reactor or the films may be exposed to downstream plasma to prevent direct ion bombardment of the film. The plasma may be generated by a high or low frequency source or may be generated by a combination of high and low frequency source(s). In embodiments wherein the porogen removal and silanol capping occur concurrently, the silanol capping agent may be introduced to the plasma using a carrier gas. In other embodiments, no carrier gas is used. The plasma source power, substrate temperature, dosage of silanol capping agent, chamber pressure and exposure times will vary depending upon plasma reactor set up and plasma composition. Typical plasma source powers range between about 100 and about 2000 Watts. Typical substrate temperatures during plasma exposure ranges between about 100 and about 400 degrees Celsius. In one embodiment, the flow rate of silanol capping agent provided in the plasma range between about 0.2 and about 20 ml/minute and preferred chamber pressures range between about 1 and about 10 Torr. Typical plasma exposure time ranges between about 5 seconds and 20 minutes. In embodiments wherein the porogen removal and silanol capping occur sequentially, the dielectric matrix can be exposed to the silanol capping agent by way of one of a vapor phase, liquid phase, supercritical phase or plasma phase. In preferred embodiments, the silanol capping agent is provided in a second plasma. If provided in a second plasma, the silanol capping agent may be provided with or without a carrier gas. The carrier gas may comprise a reducing gas such as those produced by adding at least one of hydrogen, ammonia, carbon monoxide and methane. Alternatively, the carrier gas may comprise an oxidizing gas such as at least one of carbon dioxide, nitrous oxide and oxygen. Additionally, at least one of nitrogen, argon or helium may also be used as the carrier gas. The second plasma source power, substrate temperature, dosage of silanol capping agent, chamber pressure and exposure times will vary depending upon plasma reactor set up and plasma composition. These and other features and advantages of the invention will be described in detail below with reference to the associated drawings. The following detailed description can be more fully understood when considered in conjunction with the drawings in which: In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, which pertains to porogen removal and �silanol capping� treatment during formation of a porous dielectric material. The present invention may be practiced without some or all of these specific details. In other instances, well known process operations have not been described in detail to not unnecessarily obscure the present invention. While the invention will be described in conjunction with the specific embodiments, it will be understood that it is not intended to limit the invention to the embodiments. For many embodiments of the invention, the substrate is a semiconductor wafer. A semiconductor wafer as discussed in this document is a semiconductor substrate at any of the various states of manufacture/fabrication in the production of integrated circuits. The terms �wafer,� �substrate,� �semiconductor wafer,� and �wafer substrate� are used interchangeably herein. It is noted, that the invention is not limited to semiconductor wafers. For example, these methods may be used for treating mesoporous molecular sieves. The present invention involves forming a low k dielectric material by way of a �precursor layer� that contains both a porogen and a dielectric matrix formed in regions around the porogen. During methods of this invention, the porogen is removed from the precursor layer to create a low-k dielectric layer. Within the precursor layer, the porogen resides in locations that will subsequently become void locations in the final dielectric layer. Hence, the porogen and dielectric matrix typically exist as separate phases within the precursor layer. To some degree, the porogen defines the porosity, void volume, tortuosity and other parameters characterizing the pore morphology in the final low-k dielectric material. In some cases, the pore morphology is set before the porogen is removed. In other cases, it is set during the porogen removal process. Further, the dielectric matrix may assume its final composition and structure either before or during the porogen removal process. A precursor layer may be formed by any one of many different techniques including spin-coating processes, supercritical infusion into a polymer matrix, print-on, dip coating, and chemical vapor deposition�particularly plasma enhanced chemical vapor deposition (PECVD). Generally, a porogen is any removable material that defines void regions in a dielectric matrix. In the case of an ordered porous or mesoporous dielectric matrix, the porogen is frequently referred to as a �template.� In many cases, the porogen comprises an organic material. Its properties depend upon the means by which it is removed from the precursor layer. Porogens are commonly removed from the precursor layer by decomposition, volatilization, and/or solvation. Thus, some porogens are highly volatile at elevated temperatures. Others are soluble in particular solvents. Still others are readily decomposed by heat, plasma, radiation, e-beam, microwave etc. In one important dielectric formation process, the porogen is a block copolymer having chemically distinct components that segregate into separate phases. For example, block copolymers may be structured such that long range ordered hydrophilic and hydrophobic phases are formed within the film by amphiphilic self-assembly. One example of such a polymer is a block copolymer of PEO polyethylene oxide and PPO polypropylene oxide. If such block copolymers are used, a hydrophilic catalyst and dielectric precursor (e.g., TEOS) preferentially segregate into the hydrophilic regions (i.e., the PEO regions) where the dielectric precursor reacts to form dielectric. After removal of the porogen, an ordered porous dielectric matrix is left. The ordered structure of the porous film is dictated by the relative amounts of PEO and PPO. Techniques for forming ordered mesoporous layers will be described further. Note that the invention is not limited to mesoporous layers of this type. For example, the present invention can be employed with non-ordered porous precursor layers, having pores of various sizes. Note that according to the International Union of Pure and Applied Chemistry (IUPAC), mesoporous materials are defined as those with pore diameters between 2 nm and 50 nm. The present invention, however, is not limited to this strict definition of mesoporous material in that porous materials having pores of any size may be formed. As such, the term �mesoporous� as used herein will refer broadly to porous materials having any pore size. In a number of embodiments, typical mesoporous materials will have pore diameters ranging between about 0.5 nm and about 50 nm. Further, the invention is not limited to silicon dioxide dielectric materials. It can be used to produce a wide variety of silicate materials to carbon-containing dielectrics, for example. The invention can also be used to produce porous metal containing materials such as metal oxides. Mesoporous Precursor Layers In one example, the process chemistry for creating a mesoporous precursor layer employs four reagents to form a mesoporous precursor layer. These are (a) a template-forming precursor (e.g., a surfactant type block copolymer), (b) a silica-forming precursor such as TEOS (tetraethyl orthosilicate), (c) a solvent such as water and/or ethanol, and (d) a catalyst such as an acid to help drive the reaction. Many common spin-coat techniques involve mixing all the reactant components together and spin-coating the mixture onto the substrate in one process step. Solution spreading, drying, block copolymer segregation, and silica formation take place all at once. Other methods, such as those described in previously referenced U.S. patent application Ser. No. 10/295,965, involve a two-step process in which the template-forming precursor, solvent and catalyst are mixed and applied by spin-coat or print-on methods to form the template in a first process step, then the silica-forming precursor is introduced to the formed template in a second process step. In one embodiment, the silica-forming precursor is introduced in the form of a supercritical fluid (e.g. TEOS dissolved in CO2) so that it can readily infuse into the hydrophilic void regions of the formed template. Many variations on the basic process are possible. Some of these will now be described briefly. In one example, a field generator is employed during the deposition process to apply an electric field to align electrostatic domains and/or ordered structures (e.g., micelles) within the precursor layer. In one embodiment, the template-forming precursor liquid contains a polymer (e.g. PEO-PPO-PEO block copolymer) or mixture of polymers dissolved in a solvent that evaporates to form the desired mesoscale structure. In another embodiment, a template-forming precursor liquid forms a block copolymer from resins that undergo polymerization with micelles that coalesce to yield a mesoscale structure. The micelles can be produced from a long-chain surfactant. The template-forming precursor liquid reacts and/or dries to provide a mesostructured matrix. The wafer is heated to selectively evaporate solvent from the template-forming precursor liquid, leaving a mesostructured template on the substrate. After the template is formed, a silica-forming precursor liquid may be introduced to form a mesoporous silica compound. Alternatively, this precursor material may be introduced earlier, together with all other components of the precursor layer. Examples of suitable silica-forming compounds include TEOS, tetramethoxysilane (TMOS), an organic alkoxysilane such as methyl triethoxysilane (MTEOS), methyltrimethoxysilane (MTMOS), dimethyldimethoxysilane (DMDMOS), dimethyldiethoxysilane (DMDEOS), a bridged siloxane such as bis-triethoxysilylethane (BTEOSE) or bis-triethoxysilylmethane (BTEOSM), a cyclic siloxane such as tetramethylcyclotetrasiloxane (TMCTS), octamethylcyclotetrasiloxane (OMCTS) and mixtures of these precursors. These compounds are dissolved in a solvent to form the silica-forming precursor liquid. In one example, TEOS is dissolved to a 2% by weight concentration in a supercritical carbon dioxide solvent. Alternatively, where mesoporous metal oxides are desired, a metal-organic compound may be used where the metal-organic compound is compatible with the deposition chemistry. For example, metal alkoxides may be used with or without sol-gel forming acid catalysts. Compatible liquid solvents such as alkanes, cycloalkanes, and carboxylic acids may also be used to adjust the viscosity and/or vapor pressure of the silica-forming precursor liquid. The resulting film will be an ordered mesoporous precursor layer suitable for applying methods of the present invention. In another approach, a non-ordered porous precursor film is formed from a porogen that does not necessarily form an ordered arrangement of the type produced by amphiphilic self-assembly with block copolymers. In one example the precursor film is formed by co-deposition of porogen and dielectric material as by a PECVD process. Frequently, in such processes, the porogen is a hydrocarbon. The porogen may either be a separate molecule delivered simultaneously with the structure-forming precursor, or it may be covalently bonded to the precursor molecule. The structure-forming precursor and the porogen are delivered to the PECVD chamber and deposited on the wafer. In a second step the porogen is removed to generate a porous film. The porogen removal step may be performed in situ in the same chamber or in a separate module or station. The porogen may be removed by a variety of methods including thermal degradation, exposure to UV radiation, exposure to e-beam or microwave energy. If thermal degradation is employed as the porogen removal step, the temperature of the wafer during the deposition process should be low enough to prevent the vaporization of the porogen, typically <250 C, and often as low as room temperature. Then, in the second step, the film is heated, typically to about 400 C, and the porogen either decomposes or vaporizes and is removed from the film, leaving behind voids. It is also possible to use higher wafer temperatures during the deposition process and then use UV radiation, e-beam or microwave methods to remove porogen. Methods of the present invention may be applied to either an as deposited film with the porogen still intact or after it has been partially or completely removed by any of various methods such as those listed above (i.e., thermal degradation, UV radiation, e-beam or microwave exposure). Note that this invention can be employed to form porous versions of many different materials, not just silicon oxides and silicates. Examples include metal oxides (e.g., oxides of Zr, Ti, Al and V), mixed metal oxides (e.g., superconducting perovskites such as the Y�Ba�Cu�O material), metals (e.g., Cu, Pt, Pd, and Ti), mixed metals, elemental semiconductors (e.g., Si, Ge, and C), compound semiconductors (e.g., III-V semiconductors such as GaAs and InP, II-VI semiconductors such as CdS, and IV-VI semiconductors such as PbS). Appropriate precursors will be apparent to those of skill in the art. As an example, many metal alkoxides are suitable metal oxide precursors. Methods of the invention involve removing porogen material from a precursor layer using a plasma. When the porogen is removed, the dielectric regions of the precursor layer remain intact on the substrate leaving a dielectric matrix, sometimes referred to as a �dielectric backbone.� These terms will be used interchangeably herein. Methods also involve �capping� hydrophilic regions in the dielectric matrix using a �silanol capping� agent. Details for implementing two preferred embodiments will now be described. Next, one of various suitable plasma techniques is used to 1) remove at least a portion of the porogen material from the precursor layer and to 2) protect or �cap� hydrophilic portions of the dielectric matrix using a �silanol capping� agent. See 103. For removing porogen, any suitable plasma method that can cause the breakdown of the organic components of the porogen material may be used. The plasma power source can be either high frequency, low frequency or a combination of the two. In general, a high frequency power component accelerates the dissociation of chemical species in the plasma while a low frequency power component emphasizes the bombardment effect to the substrate. In one example, the high frequency plasma source has a frequency of 13.5 MHz while the low frequency source is 400 kHz. Note that other porogen removal methods, such as thermal degradation, UV exposure, microwave exposure, electron beam exposure, supercritical processes, volatilization and solvent extraction, have been described in U.S. patent application Ser. No. 10/404,693, which is incorporated in its entirety herein. One advantage of using plasma exposure techniques is that they can be conducted at relatively low temperatures and/or for relatively short times compared to, for example, thermal degradation techniques. It has been found that a reducing plasma, usually comprising hydrogen and nitrogen, is effective for removing porogen without damaging the dielectric backbone. However, use of nitrogen can result in incorporation of nitrogen into the dielectric layer, which can cause later process integration issues. For example, if a photoresist is deposited thereon, the nitrogen may react with the photoresist to produce problematic �mushroom� structures. Oxidizing plasmas, however, have been found to attack and cause damage to the dielectric backbone. To address this problem, experiments with oxidizing plasma using less aggressive conditions (e.g., using milder oxidants such as CO2) have been preformed and have been shown to create less damage to the dielectric backbone. Results from some of these experiments are described later. In this first embodiment, porogen removal and silanol capping occur simultaneously using a single plasma. That is, the plasma comprises agents for removing porogen as well as silanol capping agents. In general, a silanol capping process helps to stabilize the porous dielectric matrix. The silanol capping agent can replace or protect the polar, hydrophilic hydroxyl (�OH) groups within the dielectric matrix with non-polar groups (e.g., alkyl groups), thereby rendering the film hydrophobic and allowing it to maintain a low overall dielectric constant, even when exposed to ambient moisture. Technically, silanol cappng in this context involves removing an acidic proton to form SiO� then protecting it as a silyl ether. Silanol capping may also involve tying up �dangling bonds,� reactive unpaired valence electrons. As used herein, the term �silanol capping� and variations thereof refer broadly to any processes that involve replacing or protecting hydroxyl groups, dangling bonds, and other reactive or hydrophilic groups with hydrophobic groups. Many silanol capping agents are suitable for this invention. Examples include, but are not limited to, disilazanes such as hexamethyldisilazane (HMDS), chlorosilanes such as trimethylchlorosilane, aldehydes such as acetaldehyde, alkylsiloxanes such as dimethyldimethoxysilane (DMDMOS), and cyclic siloxanes such as TMCTS or OMCTS. If HMDS is used, for example, the SiO� groups will be protected with Si(CH3)3 groups forming SiOSi(CH3)3 moieties within the film. In preferred embodiments, the silanol capping agent is introduced into a plasma that already has porogen removal agents. Note that the silanol capping agent may also act as a porogen removal agent itself. For example, HMDS may be injected into a H2/N2 containing plasma. The HMDS may be injected with or without a carrier gas. If a carrier gas is used, it is preferably an inert gas such as argon or helium. Other gases including nitrogen or hydrogen or gas mixtures may also be used. The H2/N2 and HMDS plasma contacts a heated wafer to remove porogen and form methylated surface groups. The relative amounts of H2/N2 can vary. In one example, the plasma contained approximately 90% nitrogen and 10% hydrogen. Preferred wafer substrate temperatures range between about 100 and 450 degrees Celsius, more preferably between about 200 and 400 degrees Celsius. Plasma exposure times can vary broadly depending upon plasma composition and other process parameters, but usually range between about 1 and 30 minutes. In one example, a H2N2 and HMDS plasma exposure of the dielectric matrix for a period of between about 1 and 2 minutes was found to be effective. The optimum conditions for the plasma exposure including gas flow rates and the plasma source power depend on the configuration of the plasma reactor. Plasma power ranges will depend significantly on the configuration and type of apparatus used and on the number of stations in the apparatus. In a specific example, a six showerhead Concept 2 SEQUEL� tool from Novellus systems is used. Using the SEQUEL� tool, preferred plasma source powers (for both high frequency and/or low frequency sources) range between about 100 and 2000 Watts distributed over six showerheads, more preferably between about 150 and 500 Watts. Power ranges for either low or high frequency sources can vary depending upon a number of factors including tool configuration, number and size of wafers exposed and type of plasma(s) used (e.g., direct or downstream plasma). Preferred pressures range between about 1 and 20 Torr, more preferably between about 2 and 5 Torr. The dosage of silanol capping agent will also vary broadly and depend upon a number of process parameters. In one example, HMDS was injected into the plasma at about 0.6 ml/min. The porogen decomposition components and other byproducts may be removed by volatilization (e.g., heating the wafer substrate and pumping away the residuals). Any suitable plasma reactor may be used. An example of a suitable apparatus is described later. After the porogen is removed and the dielectric matrix is sufficiently treated, the process flow of After porogen removal, the resulting dielectric matrix is exposed to a silanol capping agent, as indicated by process block 109. Note that this silanol capping process is preferably done without exposing the dielectric matrix formed at block 107 to ambient. This is to prevent ambient moisture from adsorbing onto the dielectric matrix, which will cause the overall k of the dielectric matrix to increase dramatically, as described previously. Again, the dielectric constant of water is about 80. Therefore, preferable methods include those in which the porogen removal and silanol capping processes are done in the same chamber or in which the vacuum is not broken between the two processes such as in a cluster type of apparatus. An example suitable apparatus is described later. As in the previous embodiment, any suitable silanol capping agent can be used, including HMDS, chlorosilanes such as trimethylchlorosilane, aldehydes such as acetaldehyde, and alkylsiloxanes such as DMDMOS. Any suitable method for exposing the dielectric matrix to the silanol capping agent can be used. For example, the silanol capping agent may be introduced in vapor phase from a bubbler, or through a liquid delivery system. Alternatively, a supercritical solution process may be used. In preferred embodiments, the silanol capping agent is introduced to the dielectric matrix in a plasma. The plasma is preferably either a reducing plasma (e.g., H2/N2) or a mild oxidizing plasma (e.g., CO2) such as described in the previous embodiment. As in the previous embodiment, the silanol capping agent may be introduced to the plasma with or without a carrier gas. The flow rate of the silanol capping agent can depend upon a number of factors including the apparatus configuration and desired partial pressure to be achieved. In one example using the Novellus Concept 2 SEQUEL� system, preferred flow rates of silanol capping agent ranged between about 0.2 and 2 ml/min. Preferred exposure times of the dielectric matrix to the plasma containing the silanol capping agent range between about 5 seconds and 20 minutes. Preferred plasma source powers range between about 150 and 500 Watts and preferred substrate temperatures range between about 100 and 400 degrees Celsius. Preferred chamber pressures range between about 2 and about 5 Torr. After the dielectric matrix is sufficiently treated and the silanol capping processes is complete, the process flow of a. Apparatus As mentioned previously, this invention is not limited to any particular plasma apparatus. Generally, the apparatus will include one or more chambers (sometimes referred to as process vessels) that house one or more wafers during porogen removal and silanol capping. A single chamber may be employed for both operations or separate chambers may be used. The one or more chambers maintain the wafer in a defined position or positions (with or without motion within that position, e.g. rotation, vibration, or other agitation) during porogen removal and silanol capping. The wafer may also be placed on a heating platen. Importantly, the apparatus will protect wafers from exposure to ambient from the time when porogen removal begins until silanol capping is complete. This may be accomplished by a vacuum integration tool�such as a cluster tool�that provides multiple chambers all enclosed within or linked together via loadlocks to a larger vacuum chamber. Examples of such apparatus include the Concept 2 SEQUEL�, SPEED, SPEED-SEQUEL�, Concept 3 SEQUEL� and VECTOR� platforms from Novellus Systems, Inc. of San Jose, Calif. In a process environment, it may be beneficial to perform the porogen removal and silanol capping operations in the same apparatus as where the precursor layer is formed. As such, a multi-station tool for the various operations may be used. In some situations, the tool may include up to five chambers. For example, a first chamber may be reserved for template formation using a block copolymer. Second and third chambers are used to infuse dielectric precursors into a mesoporous template formed in the first chamber. The precursors react to form a dielectric matrix in one phase of the template. Then, in a fourth chamber, the template-dielectric layer is detemplated. Finally, in a fifth chamber, the resulting dielectric matrix is silanol capped. In embodiments where the porogen removal and silanol capping occur simultaneously, the fourth chamber is used for porogen removal and silanol capping processes. If separate chambers are employed for porogen removal and silanol capping, the apparatus should be used in a manner that protects the dielectric matrix from exposure to moisture between the operations. In one embodiment, the entire apparatus is enclosed in a vacuum compartment. In another embodiment, the wafer path between the porogen removal and silanol capping chambers is maintained under vacuum. As shown, a reactor 201 includes a process chamber 203, which encloses components of the reactor and serves to contain the reactant gases and provide an area to introduce the reactant gases to substrate 209. In one example, the process chamber walls are made from aluminum. Within the process chamber, a wafer pedestal 207 supports a substrate 209. The pedestal 207 typically includes a chuck 208 to hold the substrate in place during the deposition reaction. The chuck 208 may be an electrostatic chuck, a mechanical chuck or various other types of chucks as are available for use in the industry and/or research. A heat transfer subsystem including lines 211 for supplying a heat transfer fluid to the pedestal 207 controls the temperature of pedestal 207. In some embodiments, the heat transfer fluid comprises water or another liquid. In other embodiments, the pedestal 207 is heated electrically. The reactant gases (i.e., the porogen removal gases and silanol capping agent), as well as inert gases (if used), are introduced individually into the reactor at tube 225 via inlet 217. A showerhead 227 may be used to distribute the gas flow uniformly in the process reactor. Note that the shape of showerhead 227 may vary with different apparatus configurations. In one embodiment, showerhead 227 is plate-shaped and situated above and parallel to substrate 209. Showerhead 227 is preferably RF biased while tube 225, via inlet 217 and process chamber 203 are at ground potential. These conditions can be achieved, for example, by electronically isolating showerhead 227 using a ceramic casing (not shown) from other components of the apparatus. A vacuum pump (e.g., a turbomolecular pump or a mechanical pump) connected to outlet 219 can draw out gases between processes. Note that As mentioned previously, embodiments of the invention may involve a supercritical process for introducing the silanol capping agent. An example of an appropriate supercritical apparatus is described, for example, in U.S. patent application Ser. No. 10/404,693, which is incorporated in its entirety herein. FTIR Experiments As shown by comparing the pretreated film (curve 301) to the three treated films (curves 303, 305 and 307), all three types of plasma processes effectively remove porogen material. Specifically, curve 301 (untreated film) has peak 311, indicating the presence of CHx groups from the hydrocarbon template, and a large peak 323, attributed to the CO ether linkages in the template along with some contribution from the SiO cage structures in the backbone. Peak 311 does not appear in the treated film spectra 303, 305 and 309. In addition, peak 323 is largely reduced in the treated film spectra 303, 305 and 309 as the template is removed but the SiO remains. Note that the peaks that still exist at around 1100 cm−1 in the spectra of the treated films 303, 305 and 309, such as peak 325, are attributed to the presence of SiO groups from the backbone. Note that in spectrum 301 of the untreated film a broad peak 313 and peak 317 are present and they do not appear in the treated films' spectra 303, 305 and 307. These peaks (313 and 317) are attributed to H2O that the porogen removal process also removes. Note that since the spectra of these treated films were taken very shortly after the plasma porogen removal process, there is no noticeable presence of H2O in the H2/N2 only (no silanol capping agent) spectrum 303. However, if an FTIR were taken of this sample (303) after the sample is exposed to ambient for some time, the spectrum would show a significant presence of H2O and the dielectric constant, k, of the film would be significantly increased. This would not be the case for the samples of spectra 305 and 307, which were treated with plasma containing silanol capping agents and would therefore be resistant to H2O adsorption and the drift in k would be much less. Other identifiable peaks in the spectra of As mentioned previously, ordinarily using an oxidizing plasma is not considered an ideal method of removing porogen since an oxidizer can not only remove template material but also attack and remove silcon-bonded organic groups, such as Si�CH3 groups in TEOS/MTEOS precursor films, that are part of the dielectric matrix backbone. Removing these silcon-bonded organic groups, as discussed previously, would result in dangling unsaturated Si-groups, which form hydroxyl groups and, which in turn make the dielectric matrix more susceptible to water adsorption. It was found, however, that weak oxidizing plasmas, such as a CO2 plasma, can be used under low plasma power conditions without too much degradation of organic groups in the dielectric matrix backbone. To illustrate this, Thus, while the H2/N2 plasma was better at not damaging the Si�CH3 bonds within the dielectric backbone, the CO2 plasma was also shown to not substantially damage the Si�CH3 bonds up to at least 4 minutes. These oxidizing conditions, therefore, may be used, for example, in instances where it is preferable to avoid incorporation of any nitrogen into the film. In addition, a mixture of H2 and CO2 can be used wherein film properties such as the dielectric constant and film hardness can be modulated by adjusting the relative amounts of H2 and CO2. While this invention has been described in terms of a few preferred embodiments, it should not be limited to the specifics presented above. Many variations on the above-described preferred embodiments, may be employed. Therefore, the invention should be broadly interpreted with reference to the following claims. Patent Citations
Non-Patent Citations
Referenced by
Legal Events
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text:
Updated: July 8, 2014 4:14PM
THEFT: A cellphone was stolen June 22 by a pickpocket from a 25-year-old Burbank man at Chuck E Cheese, 4031 W. 95th St.
NO LICENSE: Orlando Talavera, 31, 9102 Tulley Ave., Oak Lawn, was charged with driving without a valid license after a stop June 23 in the 5400 block of Southwest Highway, police said.
DISORDERLY CONDUCT: Anthony Kush, 49, 9204 Kedvale Ave., Oak Lawn, was charged with disorderly conduct June 23 after he was throwing items from three open suitcases outside 7-Eleven, 4501 W. 95th St., police said.
THEFT: A hubcap was stolen June 23 from a 2013 Ford in the 4600 block of 110th Street.
RETAIL THEFT: Kathy Farmer, 59, 8523 S. Burnham Ave., Unit 1, Chicago, was charged with retail theft June 23 after she filled a luggage bag with items worth $329 at Target, 4120 W. 95th St., police said.
THEFT: Four center caps on wheels were stolen June 23 from a car in the 10100 block of Cicero Avenue.
POT POSSESSION: Omar Aburumman, 18, 9100 Beloit Ave., Bridgeview, was charged with possession of marijuana after a June 24 stop in the 9400 block of Nashville Avenue, police said.
SIBLINGS ARRESTED: Mary Baxter, 51, and her brother, Gerald Baxter, 53, were charged with disorderly conduct after they engaged in a loud, profanity-filled argument June 24 in the condominium they share, 4420 W. 111th St., Unit 202, police said.
MARIJUANA CHARGE: Peter Abbasi, 27, 437 Shadow Creek Drive, Palos Heights, was charged with possession of marijuana and drug paraphernalia June 24 after a stop in the 4700 block of 92nd Street, police said.
THEFT: A gym bag that contained a wallet, keys, cellphone, two credit cards and approximately $50 was stolen June 24 from a locker at LA Fitness, 8812 Cicero Ave.
THEFT: A credit card and $48 were in a wallet stolen June 24 from a locked locker at LA Fitness, 8812 Cicero Ave. The credit card was used to buy $50 of gas from a station at 83rd Street and Cottage Grove Avenue in Chicago, police said.
POT POSSESSION: Paul Torres, 24, 5007 W. 83rd St., Burbank, was charged with possession of marijuana, and Jason Chudzinski, 13775 Kit Lane, Lemont, was charged with possession of drug paraphernalia June 25 after police smelled pot coming from a car parked in the 9700 block of Cicero Avenue, police said.
HEROIN ARREST: Anthony Hollins, 39, 2741 W. 66th St., Chicago, was charged with possession of heroin after police investigating the report of a fight stopped him June 25 in the 8700 block of Cicero Avenue and found him with 13 small bags of heroin, police said.
THEFT: A makeup bag that contained a debit card and $400 was stolen June 26 from a shopper at the Salvation Army thrift store, 8732 Cicero Ave.
REVOKED LICENSE: Edward Bradley, 52, of Kankakee, was charged with driving on a revoked license and failure to secure a child in a safety seat after he was stopped June 26 at 96th Street and Cicero Avenue, police said.
SUSPENDED LICENSE: Kevin Womack, 31, 1000 W. 76th St., Chicago, was charged with driving on a suspended license after being stopped June 26 in the 4700 block of 104th Street, police said.
VANDALISM: A custodian at Kolmar School, 10425 Kolmar Ave., found graffiti spray painted on rubber matting in the playground on June 26.
WARRANT ARREST: Robert Spikes, 20, 11561 S. Racine Ave., Chicago, was arrested June 26 outside Walgreens, 4740 W. 95th St., for soliciting without a permit, and a background check found he was wanted on a Chicago warrant for failure to appear in court, police said. They said Spikes was also charged with obstructing identification for giving officers a phony name.
VANDALISM: Tires on a 2003 Mazda were slashed June 26 or 27 in the 9100 block of Tulley Avenue, and the car and a house were also egged and rolled with toilet paper.
TRESPASSING: David Freeze, 50, 9000 Ridgeland Ave., Oak Lawn, was charged with trespassing June 27 after he refused to leave the parking lot of Jewel-Osco, 8801 Ridgeland Ave., where he was asking people for money and cigarettes and becoming belligerent when they refused, police said.
THEFT: A bicycle left unlocked was stolen June 27 outside Jewel-Osco, 8801 Ridgeland Ave.
HOME BURGLARY: Three crystal figurines, video games and systems, watches, jewelry, a wedding ring, an iPhone and a piggy bank were stolen June 27 or 28 from a house in the 8900 block of Parkside Avenue, police said.
VANDALISM: Someone scratched a 2001 Hyundai Sonata June 27 in the 9500 block of West Shore Drive, and also snapped off the antenna and poured a foreign substance into the gas tank.
POT POSSESSION: John Collins, 22, 6715 W. 88th St., Oak Lawn, was charged with possession of marijuana after a stop June 27 in the 10300 block of Central Avenue, police said.
BURGLARY: A snowblower and a grass trimmer were stolen June 27 or 28 from an unlocked garage in the 8800 block of Sproat Avenue.
REVOKED LICENSE: Allen Snyder, 53, 885 Campbell, Chicago, was charged with driving on a revoked license after a June 28 stop in the 5700 block of 95th Street, police said.
DUI ARREST: Angel Brown, 28, 12241 Spencer, Alsip, was charged with drunken driving and speeding after being stopped June 28 at 96th Street and Cicero Avenue, police said.
HOME BURGLARY: Jewelry and $2,000 in cash were stolen June 28 from a condominium in the 6100 block of 97th Street.
DUI CASE: Gilberto Cabrales, 21, 2864 E. 94th St., Chicago, was charged with drunken driving, improper parking on a roadway and no insurance June 28 after a stop at 95th Street and Cicero Avenue, police said.
RETAIL THEFT: Monica Harris-Gillespie, 49, 3537 W. 83rd Place, Chicago, was charged with retail theft after she stole five bottles of tequila June 28 from Jewel-Osco, 9424 Pulaski Road, police said.
WARRANT ARREST: Joel Torres, 56, 9008 W. Sierra Lane, Palos Hills, was stopped for speeding June 28 in the 10500 block of Cicero Avenue and was arrested on Hickory Hills and Orland Park warrants for driving on a suspended license, police said.
CAR BURGLARY: A 77-year-old Evergreen Park man told police that his collection of German stamps was stolen June 28 from the trunk of his unlocked car while he was in a bakery in the 10800 block of Cicero Avenue.
THEFT: A woman's wedding ring was stolen June 29 from an apartment in the 8800 block of Mobile Avenue.
SUSPENDED LICENSE: Omar Issa Rimawi, 22, 8918 Central Ave., Oak Lawn, was charged with driving on a suspended license and without a seat belt after a stop June 29 in the 5800 block of 87th Street, police said.
MARIJUANA ARREST: Gregory Romero, 49, 8612 S. Kostner Ave., Chicago, was charged with possession of marijuana and drug paraphernalia and improper lane use after being stopped June 29 in the 9300 block of Massasoit Avenue, police said.

subset: commoncrawl


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Young's Literal Translation (YLT) | New International Version (NIV) |
24 Only, the hand of Ahikam son of Shaphan hath been with Jeremiah so as not to give him up into the hand of the people to put him to death. | 24 Furthermore, Ahikam son of Shaphan supported Jeremiah, and so he was not handed over to the people to be put to death. |
Young's Literal Translation is in the public domain. (Young's Literal Translation - The Bible Online) | Scripture quoted by permission. Quotations designated (NIV) are from THE HOLY BIBLE: NEW INTERNATIONAL VERSION®. NIV®. Copyright © 1973, 1978, 1984 by Biblica. All rights reserved worldwide. (New International Version Bible Online) |


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Previous Episode | Next Episode
Circus Of Ooze
This page has been viewed 8 times this month, and 400 times total.
- Super Robot Monkey Team Hyperforce Go! Cartoon Episode Guide
- Walt Disney Studios
- Animation Studio: The Answer Studio
- Distributed by: Buena Vista Television
- Cartoon Characters: Chiro, Sprx-77, Otto, Antauri, Nova, Gibson, The Skeleton King, Popcorn Monster, Ringmaster, Leeann.
- Voice Actors: Greg Cipes, Mark Hamill, Clancy Brown, Tom Kenny, Corey Feldman, Kari Wahlgren, Kevin Michael Richardson, Robert Englund; Full Voice Cast ...
- Directed By Fumio Maezono, Ciro Nieli, Chris Reccardi.
- Produced By Henry Gilroy, John L. Carrillo, Randolph Heard, Ciro Nieli.
- Written By Greg Weisman.
- Music: Sebastian Evans, Andy Sturmer.
- Editor: Ted Supa.
- First Aired on December 11, 2004.
- Originally Aired on ABC Family (USA).
- Running Time: 30 minutes.
- Season: 1
- Color
Cartoon Summary:
When the team hits the circus for a day of food and fun, they get that and much more than they wanted. The mysterious ringmaster has taken an interest in the... (more)
Cartoon Production Information:
In the far-off future a boy named Chiro stumbles upon an abandoned Super Robot, which he activates and releases five robot monkeys and the Power of the Primate. With his new found power and leadership... (more)
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Technical Data |
2-[(5-Fluoresceinyl)aminocarbonyl]ethyl Mercaptan |
5mg |
Molecular Biology | Storage: -20°CShipping: RT |
Fluorescence: max. Abs. 492nm; max. Em. 515nm; e x 10-3: 75 Melting Point: 310-320°C dec. Solubility: DMF, DMSO Storage and Stability: May be stored at RT for short-term only. Long-term storage is recommended at -20°C. For maximum recovery of product, centrifuge the original vial prior to removing the cap. Molecular Formula: C23H17NO6S |
Important Note: This product as supplied is intended for research use only, not for use in human, therapeutic or diagnostic applications without the expressed written authorization of United States Biological. Toxicity and Hazards: All products should be handled by qualified personnel only, trained in laboratory procedures. |


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Selected FAQ |
What kind of paper gives the best results for high quality printing? |
For the best results, you'll want to use one of Epson's special ink jet papers designed for the Artisan. For example, your photos will look great printed on Epson Premium Photo Paper Glossy, Epson Premium Presentation Paper Matte, and Epson Bright White Paper. For detailed information on these and other Epson paper products for the Artisan, see the Paper & Media page. |


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Broken "ear" on drawer cover Robert F. • Escondido, CA • October 06, 2014 Appliance: LG Refrigerator LRFC25750TT My Repair & Advice Found the replacement cover for our LG refrigerator easily on the Appliance Parts Pro schematics. Ordered the part on Thursday and it arrived on Friday! No tools necessary to install the drawer, but was careful not to bend the ears on the new drawer when installing. Was this review helpful to you?
Broken rails for produce drawers Richard R. • Pittsburgh, PA • August 03, 2014 Appliance: LG Refrigerator LRFD25850TT My Repair & Advice Replaced the entire bottom plastic frame. It looks like they redesigned the rails, hopefully they won't break off so easily this time. If you make this repair as well, make sure you remove the metal rail from the old frame and install on the new one before putting everything else back on. Install time includes taking the time to clean the fridge, the glass shelf and all other parts that had somehow accumulated a bit of grime over the past 8 years :) Was this review helpful to you?
Refrigerator had broken main shelf unit and a couple of broken drawer lids John M. • Brockton, MA • November 24, 2014 Appliance: LG Refrigerator LFC25760SB My Repair & Advice Using the parts from Appliance Parts Pros I was able to disassemble the broken units and reassemble so everything was easy to use and back to looking good. The astonishing part was the speed at which the parts were delivered. Ordered afternoon time on one day and arrived at my doorstep the very next day. Great service and all the right parts. Thanks! Was this review helpful to you?
Interior lights were staying on with doors closed causing plastic cover lens and lites to not function Ron F. • Norwich, CT • December 13, 2014 Appliance: Model LG MODEL LFC-21760ST My Repair & Advice Replaced light assy , plastic lens, cover along with PCB (control board.) Was this review helpful to you?
The light did not come on when the door was opened Kenneth L. • Waynesboro, MS • April 06, 2014 Appliance: Model MODEL 795-76202.901 My Repair & Advice I replaced the light switch. I did have a little problem though. Before a ordered the first switch, I watched the video that you provided on your web site. When tried to remove the old switch, it showed the little lever on top of the switch that holds it in. I tried to pry the top of the switch, and broke part o the switch plate off. That was when I really looked at the switch I received, and found that it was not the same as the one that I was trying to remove (size wise). That was when I sent that one back and re-ordered another switch. When I received the new switch, I could see that the little lever was on the end of mine. 60 seconds later, I had a switch installed that worked. Other than that, it was a piece of cake. Thanks Was this review helpful to you?


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You do not need Nokia Connectivity Cable Driver to copy your photos or videos to your PC. Simply connect your phone to your computer with a compatible USB cable in Mass Storage mode, and you can transfer your photos and videos between your phone and PC.
Nokia 301 - Can I copy photos or videos I have captured on my phone to my PC using Nokia Connectivity Cable Driver?
Related FAQs
- Where can I find information about WhatsApp, Skype, Angry Birds, Twitter, NimBuzz, Viber, Fring, or some other non-Microsoft application (3rd party application)?
- My phone feels warm
- My Bluetooth connection does not work
- How can I unlock my phone so I can use another network operator's SIM card?
- I have forgotten my Nokia account password


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- T-Rex Slippers
- The sleek T-Rex Slippers are a soft reminder of the prehistoric ages. Made of soft polyester fabric and a 1" foam-rubber no-slip bottom, the indoor slippers will keep your feet warm and cozy throughout the seasons. In the kids T-Rex Slippers, sized for kids of all ages, adults and children… [ read more ]
- $24.95
- T-Rex Youth Flip T-Shirt
- Rule the lands in this T-Rex Youth Flip T-Shirt. This is the shirt that started it all. The T-Rex flip shirt is a single tee that flips over your head to turn you in to a Tyrannosaurus Rex when someone asks you about your T-Rex. [ read more ]
- $19.95
- 12%
off - Triceratops Stuffed Animal
- is Triceratops stuffed animal is back from the Cretaceous period and is cuter than ever. At 12 inches the cuddly three horned herbivore will quickly become your little dino lovers favorite. [ read more ]
Can't find what you're looking for? Click here


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Kourtney Kardashian Christmas Tree Decoration
- « Back to Photo
- / November 29, 2011 /
- 24 Comments
God Bless you and your beautiful family, Christmas is such a beautiful and wonderful holiday, thats why I got married on Christmas of last year, me and my husband love watching your alls shows Masons birthday is coming up and I would like to wish him an early happy birthday.
God Bless You<3
okay with ALL the money that you MAKE… you cant afford a BETTER cell phone to take GOOD pix of your tree… really?
its the lighting why do you have to be so rude Lisa any ways its a big tree i bet its going to look good when you put some lights on there
@lisa….don't you know it's rude to talk about how much money someone has…..I think the fact that Kourtney took the photo with her cell phone and not hire a professional photographer to do it for her, and post it on her website just shows how down to earth she is…this is something we all would do….goes to show…if you were a celebrity and had lots of money how stock up and self endulged you would be…
Love the tree Kourt…
Ya im with Marina.. nice trees….
Happy Holidays to you Kourtney! I can't believe how fast Christmas has come this year, time goes so quickly. I'm also getting ready to put up Christmas decorations! This is the best time of the year, everyone is cheery and merry Have a great time decorating Kourt, can't wait to see the end product! Please share, lots of love xxx
Kourt, you should def post a picture of your tree all decorated!!! Happy Holidays! xx
i read on e online that you expecting your second child
i hope it's a little girl
I love Christmas!! Your tree looks huge can't wait to see it decorated. Yes I saw on e online you were expecting too..CONGRATULATIONS!Your such a great Mum!
I can't wait to see that tree decorated!
Just saw the comments above and went to see e online! Congratulations to you and your family!! Such happy news!
Congratulations on your second pregnancy, Kourt!
Congrats for number two!!!! Its an amazing adventure your about to go on! i have 2 boys 13 months apart and it is the craziest ride of my life but its soooo worth it. Congrats again!!!!!
Omg Kourtney!! Congratulations on your second pregnancy!!! I hope everything goes well and that you and the baby will always stay healthy and happy. I'm so happy for you, this is the right time for you guys to have a second child and I know you'll make this baby a very very happy & blessed child. Congrats to both you and Scott xxx
Wow nice decorations
Your tree is beautiful just like that..can't wait to see what it looks like decorated. Congrats to you and Scott on your second bundle of joy!
OMG Kourtney! I'm PREGNANT TOO! I'm just 10 weeks today, and go for my 12 week appointment on Dec 14th!! I'm excited and told my close family and friends, I plan to share the news with everyone after my 12 week appointment! It's my first child and I'm sooo nervous! I'm not married either, and was nervous telling my family, but everyone is so excited! I'm scared that I won't be able to save enough money for maternaty leave Congrats again to you! PS: I'm due around June 27th!
Hi, kourtney I can't wait to have that tree decraded I bet it will look like the best christmas ever. Also congratulations on second pregnancy I preyed that you having a second child or Khloe or Kim having a child I guess one of my preys came true. I'm so happy for you guys I'm loving that your family is expanding even more. I was surprised and happy when you had your first pregnancy now I'm even more surprised and happy that you and Scott are having a second child. I know you guys had your up's and down's but you guys are still wonderful parents and so happy that you get to your love with another child again. God really has you and your family's back I'm sure Mason is happy to be a big brother. I hope you guys a girl this time and hope you film your pregnancy on KUWTK like you did last time. Love you all very much xoxo
love the tree doll , so similar to my own here in my canada home
happy holidays <3
hey kourt , ubber excited about your pregnancy, when i saw it online i couldnt have been happier for you. My daughter and mason are a 11 months apart and have some similarities e.g. the hair so adorable. cant wait till sunday to watch the next episode, ok gotta run bye love…
Kourtney is it true? Are you expecting? Congratulations if you are! I wish you and Scott the best!
The tree looks beautiful btw!
ps the trees are beautiful <3
Bitchy comment from lisa?! Sounds like ur well jeal?! Kourtney fab tree dude love it?! Woohooooooo… Bet mason is so excited yeah?! U guys are amazing yeah?!! X


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New Living Translation (NLT) | New International Version (NIV) |
1 Jesus told this story to his disciples: "A rich man hired a manager to handle his affairs, but soon a rumor went around that the manager was thoroughly dishonest. | 1 Jesus told his disciples: "There was a rich man whose manager was accused of wasting his possessions. |
2 So his employer called him in and said, 'What's this I hear about your stealing from me? Get your report in order, because you are going to be dismissed.'" | 2 So he called him in and asked him, 'What is this I hear about you? Give an account of your management, because you cannot be manager any longer.' |
3 "The manager thought to himself, 'Now what? I'm through here, and I don't have the strength to go out and dig ditches, and I'm too proud to beg. | 3 "The manager said to himself, 'What shall I do now? My master is taking away my job. I'm not strong enough to dig, and I'm ashamed to beg-- |
4 I know just the thing! And then I'll have plenty of friends to take care of me when I leave!'" | 4 I know what I'll do so that, when I lose my job here, people will welcome me into their houses.' |
5 "So he invited each person who owed money to his employer to come and discuss the situation. He asked the first one, 'How much do you owe him?' | 5 "So he called in each one of his master's debtors. He asked the first, 'How much do you owe my master?' |
6 The man replied, 'I owe him eight hundred gallons of olive oil.' So the manager told him, 'Tear up that bill and write another one for four hundred gallons.'" | 6 " 'Eight hundred gallons of olive oil,' he replied. "The manager told him, 'Take your bill, sit down quickly, and make it four hundred.' |
Scripture quotations marked NLT are taken from the Holy Bible, New Living Translation, copyright 1996. Used by permission of Tyndale House Publishers, Inc., Wheaton, Illinois 60189. All rights reserved. (New Living Translation - The Bible Online) | Scripture quoted by permission. Quotations designated (NIV) are from THE HOLY BIBLE: NEW INTERNATIONAL VERSION®. NIV®. Copyright © 1973, 1978, 1984 by Biblica. All rights reserved worldwide. (New International Version Bible Online) |


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Olivia Munn in the "Hey Olivia!" issue of MYMAG
1 of 6
Here's Olivia Munn posing for the "Hey Olivia!" issue of MYMAG which hits newsstands later this month is available exclusively online. Somehow she's managed to score herself a cameo in Iron Man 2, and I have no idea how she pulled that off except I do and I want to cover it in frosting and marzipan ...


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EXCLUSIVE: Japanese Popstars & Editors Collabo
The sonic palate of Northern Ireland trio Japanese Popstars spans electronic music's lifespan, so it's no surprise that the group would recruit a wide range of guest vocalists for their new album, Controlling Your Allegiance, out June 21. "Joshua," the album's final track, features the signature croon of Tom Smith, frontman for British dark rock mainstays Editors -- hear it here.
Smith brings his brooding baritone to bear on the swelling track, conjuring up memories of New Order's nostalgia-tinged romanticism. "Our behavior turns like an ocean," he sings. The song follows a similar aesthetic, sliding gracefully between minimalistic atmospherics, luscious synth flourishes, and club-ready beat-drops.
LISTEN: Japanese Popstars, "Joshua" (feat. Tom Smith of Editors)
The Popstars had remixed "Papillon," the rousing first single from Editors' 2009 effort, In This Light & On This Evening, and reached out to Smith when working on their own record.
"They sent me a couple of instrumental song ideas and asked if I'd like to submit vocals ideas," Smith tells SPIN. "The tune that has ended up being 'Joshua' was my favorite instantly, and it wasn't long before melody and lyrical ideas were floating around my head. One afternoon I listened to it over and over whilst out and about on the busy streets of Camden and the tune felt connected to the over-crowded, bustling, buzzing streets I walked that afternoon."
Smith's yearning performance gives the song a sense of alienation, but also of hope. "His voice is so powerful," says Gary Curran of the Popstars. "Recording with Tom was a great experience. He was very professional and had lots of ideas and was open to any ideas we had regarding the track."
"We both wanted to produce something special that represented a balance between our music and Tom's," Curran adds. "And I think we managed to succeed."
Smith also had a more personal motive to take part in the process:"It puts me on an album with Robert Smith," the Editors man says of the Cure singer, who contributes vocals on the Popstars song "Take Forever." Other guests on the album include Jon Spencer and Chicago house icon Green Velvet.
The Popstars will play select American dates beginning June 30, with stops in San Diego, L.A., Chicago, and the Dance.Here.Now. Festival on Governor's Island in New York City on July 3. See all dates here.


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paleyjim OfflineDiesel Fanatic |
Last Activity: Yesterday 06:47 PM
About Me
- About paleyjim
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- Jim Paley
'96 Chevy K2500 - See Photos in My Garage, ECLB, G80, VIN F, 4.10, 254K miles, Remote PMD behind bumper w/ #9 resistor, Braided Oil Cooler Lines, Homebrew Auxiliary LED Backup Lights, Relay powered headlights, AR23 Rims, 265/75-16 Treadwright Claws, Dual front receivers, Ram Towing Mirrors
FRC-10 lift pump<-2 have now died on me (temporarily back to OEM while I decide on a replacement)
32 micron Pre lift pump spin on filter, Drilled and tapped FFM with -6 braided line and greatly enlarged IP inlet fittings, K47 Air Cleaner with 3" PVC Elbow, TDCO set to -1.76, 4" stainless downpipe-back exhaust
- Jim Paley
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POSTED: Thursday, March 22, 2012 - 7:30pm
UPDATED: Thursday, March 22, 2012 - 7:30pm
Scott Drew is leading the Baylor Bears into the Sweet Sixteen.
Baylor will battle Xavier Friday night.
Here is what the coach said...
"The team is very excited to be here. This time of year games usually come down to one or two possessions. We've had outstanding leadership all year. That's why we're able to have a chance at a Sweet Sixteen. Hopefully that continues."
No YouTube


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iPad 2 Chargers
iPad 2 Charger Buyer's Guide Hey guys this is Mario from AccessoryGeeks and welcome to Apple iPad 2 Charger Section. As you can see over here we have plenty of different selections of the chargers for the Apple iPad 2 and since it is an Apple product it actually works with most of Apple you know products like the iPod, iPod Touch, or iPhone.
Original Aprolink Apple iPad/ 2 Charging/ Synchronizing/ Viewing Stand, PAS-02-01 - White/ Gray
iPad 2
- Apple Devices Accessories
- Samsung Devices Accessories
- Accessories for New Devices


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Let me expand on my first post... I dont want Gubment controlled or mandated anything. I do think the instructors should have enough pride in the product they turn loose to really test and make sure they are signing off on QUALITY CCWrs. Most of them do not, its just about making a few bucks, process in then out the door the go.
I used to do a lot of CCW training; I have all but completely stopped. I didn't want to testify in court that I trained some of the people that came to me, let alone even knew them.
At that time I rewrote my program, and now its much tougher than the states requirements. I tell anybody that going in. I only take two students at a time, and I'm expensive. I will spend as much time as I need to, in order to make sure I have a good shooter when they leave me.
I do a written test that covers ethics, legal, theory and mechanics. The shooting test is the state required, and some moving, shooting from cover, draw and presentation.
I will fail anybody who cannot make the grade. I also tell them that before we begin, but I will work with them until the do pass.
I guess I get a little irritated with the NRA "instructors" that do no more than read from the provided material. That is not instruction. The people they pass through their program are no better than when they came in, other than a little lighter in the wallet.
OK, I'm done now, flame away.


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Sperone Westwater Gallery, New York City, USA, by Foster + Partners
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- Subjects:Math
Interactive Whiteboard 101: A Resource of Activities for Math Instruction
- Grades: PreK–K, 1–2, 3–5, 6–8, 9–12
Whiteboards 101: A Resource of Activities for Literacy Instruction," I shared numerous literacy Web sites and games to use on your interactive whiteboard. This week, click "read more" to see an extensive list of math games that will have your students out of their seats, up at the board, and exploring math concepts.
Remember . . .
The power of the interactive whiteboard lies in its being interactive. Keep in mind when planning or selecting activities that the students should be the ones up at the board interacting with the content as they are learning.
Below is a list of FREE resources that you can use in your math class today:
Primary Grade Resources
Students move the hands of the interactive clock to show the given time.
Coin Names: Penny Through Quarter
Students choose the name of the coin shown onscreen in this game from IXL Learning that features audio support. With IXL's Equivalent Coins game, students choose the group of coins that equals the number shown, and with Toon University's Discovering Coin Values, students drop coins in a cup to add up to a given number.
Drag the slider on the thermometer up and down to display photos of scenes that correspond with that temperature, from desert sands to an icy Arctic day.
Go on adventures — and solve math problems — with Max and Ruth in these 19 audio stories, sorted by level of difficulty and according to skill.
Use this interactive tool to help your students better understand place value. Give students a number and then have them click on the cards that will create it. For another place value game, your students can help a duck play golf at Toon University.
Students prevent shark bites by selecting the number corresponding to the base ten blocks shown.
This is a favorite among my students. Drag the digital clocks to the analog clocks showing the same time. Students love competing to be fastest at this game. For a similar game, see PrimaryGames' What Time Is It?
At this site, discover many different interactive lessons and games teaching students how to measure length, mass, and capacity.
This game provides information on three different aspects of time, and then has students play a game telling the time. To play, have a student at your board click to stop the clock. Then, after the class determines the correct time, let the student type it in to see if they are correct.
Upper Elementary Resources
At this Utah State University site, students find a common denominator and then add the fractions. If they enjoy that, have them check out their Base 10 Blocks Addition game as well.
Students first read the client's order and then convert the fractions to add the correct number of ice cream scoops. Play the game with pizza at Tony Fraction's Pizza Shop, or hustle students through the cafeteria lunch line in Lunch Lady.
In this Math Playground game, students will enjoy helping Harvey, the less-than-perfect cashier at Perfect Pets, make change. Other fun Math Playground games include Thinking Block Tutorials and Shopping at Troy's Toys, which asks students to work with percents.
Students listen to 27 audio stories and solve the mysteries by doing math problems. Stories are sorted by difficulty and by skill.
Students race to answer the multiplication facts. The color system lets them know when they're ready to move on to the next level.
This amazing Scholastic.com resource features over 200 math and science activities, many of which have video and quiz components that will work wonderfully on your interactive whiteboard. There are videos on all math skills including algebra, determining the missing operation, fractions, geometry, probability, and more.
Select the operation to practice and the numbers before playing. Then let your students click away and practice their facts.
Students use the pictures to determine the weight of various Wangdoodles (the residents of Planet Algebra-5). An excellent game for problem-solving skills.
Middle School/High School Resources
Students create factor trees in this interactive, self-checking Math Playground game.
Pick a science or social studies topic for your students to learn about as they use their math skills to figure out the answers to the questions.
This Scholastic.com resource is great for middle and high school students, too. It features over 200 math and science activities, many of which have video and quiz components that will work wonderfully on your interactive whiteboard.
Resources for Any Grade Level
This extensive collection of games allows students to practice various skills at a number of levels.
National Library of Virtual Manipulatives
This Web site offers games in all math areas, including geometry, algebra, and measurement.
How are you using your interactive whiteboard during math instruction? Please comment below. We would love to hear from you!
This is what I have just created a new blog, please pay attention. http://www.irepliquemontresluxe.com
You have raised an important issue..Thanks for sharing..I would like to read more current affairs from this blog..keep posting..
it love nice topic thanks you
Thanks for the tips and the information
Thank you and I am so glad you will be able to use these great resources. Have a great summer!
I love Study Jams! This will definitely be put to good use in my classroom.
Students choose the name of the coin shown onscreen in this game from IXL Learning that features audio support. With IXL's Equivalent Coins game, students choose the group of coins that equals the number shown, and with Toon University's Discovering Coin Values, students drop coins in a cup to add up to a given number.
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Connie, Thank you and I am so glad you will be able to use these great resources. Have a great summer! Smiles, Megan
This is fantastic! Thank you for being so willing to share with the world!!!!!!!!!!!


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MIDWEST (Cincinnati, OH) April 24-26, 2014
With 100's of information-packed workshops that are presented by a truly unparalleled group of Featured Speakers, attendees are able to choose sessions that are most applicable to their own homeschooling efforts.
These sessions will include topics such as Math, Reading, Science, Spelling, Writing, Classical Home Education, Charlotte Mason Methods, Unit Studies, Beginning Homeschooling, Homeschooling through High School, Special Needs, Homeschool Transcripts, Homeschool Legal Questions, Gifted Homeschooling, Successful Parenting, Christian Worldview, Creation Apologetics and much more!
You'll not want to miss the very special session with Gianna Jessen, a Family Comedy Night with Mark Lowry, and an evening with Dr. Benjamin Carson.


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There's a new district in town.
Councilman Jimmy Van Bramer (D-Sunnyside), chairman of the Cultural Affairs Committee, announced the designation of the Kaufman Arts District in Astoria.
"This corner of Queens has quickly become a vibrant community of cultural venues and arts organizations that have attracted some of our generation's greatest artists," Van Bramer said during the Friday morning event. "Within the borough's first official arts district, our goals will be to nurture the existing artists and arts organizations, to draw additional, cutting-edge arts groups here and to create an environment in which artistic work will flourish."
Anchored by Kaufman Astoria Studios and the Museum of the Moving Image, the Kaufman Arts District's mission will be to advance and promote the area as a world-class, vibrant cultural destination and home for creative industries.
The area is also home to the highly regarded Frank Sinatra School of the Arts, the Astor Room — a restaurant that is housed in the former Paramount commissary — Studio Square, the Queens Council on the Arts, UA Kaufman Astoria Cinemas, the Theater Development Fund's costume collection and the Astoria Performing Arts Center.
The district is bounded by the bustling 31st Street — where the main entrances to the museum and the studio are — to the west, 34th Avenue to the north, Steinway Street to the east and 37th Avenue to the south.
"As a borough resident who was born and raised only a few block from here, I am proud to say that I helped play a major role in working with the partners to make this day a reality," Van Bramer, who tried on a vintage ringmaster jacket during the ceremony, said.
Assemblywoman Aravella Simotas (D-Astoria) said the district will elevate the already well-known area even more.
"The new Kaufman Arts District is a wonderful opportunity to showcase and foster Western Queens' continued rise as an arts and culture destination," she said. "The designation will recognize that the area surrounding Kaufman Astoria Studios has been transformed by the hard work of so many into a world-class, vibrant cultural and arts district in the heart of Astoria."
While institutions such as Kaufman have received some flack from surrounding neighbors for taking away parking spaces to accommodate shoots, electeds including state Sen. Mike Gianaris (D-Astoria) assert that the pros outbalance the cons.
"The arts have always been at the heart of Astoria's cultural heritage, thanks in no small part to the presence of Kaufman Astoria Studios," he said. "Over the years Kaufman and Western Queens have blossomed side by side into a citywide landmark and a neighborhood that doubles as a world-class destination of the arts. It is only right that the Kaufman Arts District will officially proclaim that our community is home to one of the great cultural centers in the world, something all who live here have known for a long time."


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