text:
Undoped GaAs grown by the vertical gradient freeze method: growth and properties
ABSTRACT Undoped GaAs crystals were grown by the vertical gradient freeze technique in a multizone furnace. By optimization of the growth equipment and the thermodynamic conditions, crystals were obtained with a low density of microdefects and dislocations (etch pits density about 10 3 cm -2) as well as semi-insulating behaviour. Residual impurities and defect levels were investigated by optical (local vibrational-mode and IR absorption) and Hall effect measurements.
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ABSTRACT: This paper is aimed at explaining the absence of As precipitates decorating dislocations in Te-doped GaAs which are found instead when other dopants are used. By transmission electron microscopy it is seen that dislocations in Te-doped GaAs are always tangled and surrounded by clouds of extrinsic loops but are not decorated with any As precipitate. Diluted Sirtl-like etching used with light (DSL etching), micro-Raman and EBIC (electron-beam-induced-current) results support the conclusion that the regions containing the loop clusters around dislocations are enriched in the TeAsVGa acceptor complex that has formed due to the diffusion of Te towards the dislocation. The formation of TeAsVGa causes an undersaturation of Ga vacancies and hence the production of a supersaturation of Ga interstitials. The latter is the driving force for the formation of the observed extrinsic loops and dislocation tangling through climb. Such processes, however, consume As interstitials which are thus no longer available for the formation of decoration As precipitates. The peculiar characteristic of Te of forming acceptor complexes like TeAsVGa is discussed with reference to the group IV dopants.Journal of Physics Condensed Matter 01/2000; 121(49):10335-10342. · 2.22 Impact Factor
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ABSTRACT: GaAs crystals having dislocation densities of 1–2 103 cm−2 were grown using VGF technique. In the grown crystals SiGa is the dominant donor and CAs the dominant acceptor. Theoretical and experimental investigations have shown the possibilities to influence on the silicon and carbon content in GaAs. Based on these results, semiinsulating properties in the crystals could be achieved reproducibly.Mittels VGF-Technik wurden GaAs-Kristalle mit Versetzungsdichten von 1–2 · 103 cm−2 hergestellt. In den gezüchteten Kristallen ist SiGa der dominierende Donator und CAS der dominierende Akzeptor. Des weiteren zeigten theoretische und experimentelle Untersuchungen die Möglichkeit zur gezielten Beeinflussung der Si- und C-Gehalte im GaAs. Von diesen Ergebnissen ausgehend, gelang die reproduzierende Einstellung semiisolierender Eigenschaften in den Kristallen.Crystal Research and Technology 02/2006; 30(7):897 - 909. · 1.12 Impact Factor
Page 1
Materials Science and Engineering B28 (1994) 87-90
SmEIItE &
Undoped GaAs grown by the vertical gradient freeze method:
growth and properties
E. Buhrig, C. Frank, G. G~irtner, K. Hein, V. Klemm, G. Kiihnel, U. Voland
Technische Universitiit Bergakademie Freiberg, D-09596 Freiberg, Germany
Undoped GaAs crystals were grown by the vertical gradient freeze technique in a multizone furnace. By optimization of the growth
equipment and the thermodynamic conditions, crystals were obtained with a low density of microdefects and dislocations (etch pits
density about 10 3 cm-2) as well as semi-insulating behaviour. Residual impurities and defect levels were investigated by optical (local
vibrational-mode and IR absorption) and Hall effect measurements.
Keywords: Gallium arsenide; Crystallization; Electrical measurements; IR spectroscopy
1. Introduction
The vertical gradient freeze (VGF) technique can be
regarded as an alternative to the vapour-pressure-
controlled Czochralski method [1]. The particular
advantage of the VGF method in comparison with the
liquid-encapsulated Czochralski (LEC) method is the
very low dislocation density [2, 3]. With regard to the
horizontal Bridgman method [4], there are advantages
in the circular cross-section of the grown crystals and a
higher homogeneity [3,5]. Further features are a
growth process without any mechanical movements
and the compact design of the growth equipment.
There are also disadvantages, e.g. it is not possible to
observe the melt directly, and the growth rate is rela-
tively small. Furthermore, there is no way to influence
the convection of the melt.
The present work reports the process fundamentals
of the crystal growth of undoped VGF GaAs with low
dislocation density and the characterization of the
resulting crystals.
2. Crystal growth
The crystals were grown in a quartz ampoule which
was placed in a 15-zone furnace using an As source
with a defined temperature to stabilize the vapour
pressure. Pyrolytic boron nitride (pBN) was used as the
crucible material. The thermal regime was determined
with a computer-controlled process. First, the furnace
0921-5107/94/$7.00 © 1994
- Elsevier Science S.A. All rights reserved
design was optimized; a ratio of the diameter D to the
length l of nearly unity for each furnace zone turned
out to be a good choice. The overheating temperature
A T O of the melt corresponding to the relation
ATo)~x l
(d T/dx is the local temperature gradient) is the basis for
achieving a constant movement of the melt-point
isotherm [6, 7]. Suitable parameters are A T O = 12 K,
d T/dx = 1.8 K cm- t and 1 = 6.6 cm. Furthermore, it
was necessary to choose conditions and ensure a
growth rate low enough to transport away the melting
heat without marked deformation of the melting-point
isotherm and to avoid constitutional undercooling.
According to the relation
dT dT dx
dt dx dt (2)
(d T/dt is the temporal cooling rate during the gradient
freeze process and dx/dt the growth rate) a growth rate
dx/dt ~ 0.3 cm h-1 and a cooling rate close to 0.6 K
h- 1 are obtained [8].
The most essential point for the choice of the
chemical conditions is the As vapour pressure. Corre-
sponding to our investigations [9], an As source tem-
perature of 621 _+ 1 °C is necessary to produce high
quality GaAs. This corresponds to an As vapour pres-
sure PAs of about I bar. In this case, the crystal growth
Page 2
E. Buhrig et al. / Mawrials Science and Lngineering B28 (I994) ,~7-~(~
is ensured with a small overpressure of As. So GaAs
crystals are formed with an As excess. This is necessary
to produce an EL2 concentration in the desired range.
It must be considered that all materials contained in
the growth equipment contribute to the total vapour
pressure. The conditions for such a growth system with
a pyrolytic BN crucible (source of B and N), quartz
ampoule (source of Si and O), graphite inserts (source
of C) and potential contamination by water (source of
H and O) are shown in Fig. 1.
Annealing experiments were carried out in equip-
ment similar to the growth furnace. Cubic samples with
dimensions of a =lcm cut from the ingot were
annealed in evacuated sealed ampoules at 1100 °C for
a time of 10 h followed by cooling at 100 K h- ~. The
As pressure in the ampoule was controlled by the
addition of As.
Fig. 2. Cellular structure of dislocations after selective photo
etching (interference contrast image; scale bar. 50(1 t~n~ I.
3. Crystal properties
3.1. Structural characterization
To investigate the structural properties of the crys-
tals in terms of their growth conditions, etching
techniques and analytical transmission electron mic-
roscopy (TEM) were used.
The dislocations are arranged in the well-known
cellular structure as demonstrated in an interference
contrast image after photo-etching in a CrO3-HF
solution [10] (Fig. 2 and Fig. 3). The mean dislocation
density (EPD) determined after KOH etching [11] is
clearly smaller than for LEC GaAs and shows values in
the range (0.5-4)x 103 cm -2, and the mean cell size is
about 1-2 mm. TEM investigations show decorated
dislocations. These decorations are arsenic tetrahedra
as demonstrated in Fig. 4, identified by the dark-field
~ 1,0 /
I o,7
GaAs +As +SiO 2 +BN +C +H20
Fig. 1. Dependence of vapour pressure on the components
(calculated for TAx = 617 °C).
Fig. 3. Decorated dislocations after selective photo-etching
(interference contrast; scale bar, 50 ~m).
/i!i!iiii~ ii ~ /~i ¸¸I
Fig. 4. TEM image of a stretched dislocation decorated by
arsenic tetrahedron (scale bar, 100 nm).
Page 3
E. Buhrig et al. / Materials Science and Engineering B28 (1994) 87-90
Table 1
Results of Hall effect and IR absorption investigations on undoped vertical-gradient-freeze-grown crystals
Hall effect IR
( X 1016 cm- 3)
(Q cm)
n300 K
(cm -3)
(xl0]tcm -3)
Semi-insulating GaAs
Semi-insulating GaAs,
3 x 107-2 X 108
1 x 101°-5x 1015 4000-6500
0.05--0.1 4000--6000
aNo changes compared with the as-grown state.
imaging technique and energy-dispersive X-ray analy-
sis. The dislocations are stretched between precipitates
owing to low thermal stresses during the crystal growth
and cooling. In the GaAs matrix, arsenic tetrahedra
were not detected at greater distances from the dis-
By annealing, the density of decorations on the
dislocations is reduced.
3.2. Electrical and optical properties
By Hall effect and conductivity measurements the
concentration n and mobility/~ of the charge carriers
were investigated. Depending on the growth and
annealing conditions the carrier concentration covers a
wide range between n = 107 and 1015 cm -3 and is n-
type in all cases. The residual impurities silicon (as Sica
donor) and carbon (as CAs acceptor) were measured by
local vibrational mode (LVM) absorption. The main
donor EL2 was detected by optical absorption at 1 ~m.
The results are listed in Table 1. On the basis of these
results the following can be stated.
(1) The different parameters measured on many
crystals show good reproducibility and the carrier
mobility/~ reaches values up to 6500 cm 2 V- 1 s- 1.
(2) The VGF process is characterized by a rela-
tively high Si concentration (about 1015 cm -3) owing to
the quartz ampoule and by a low carbon content
((1-5) × 1014 cm -3) (see also [3]). Therefore it is more
difficult in comparison with the LEC technique to grow
undoped GaAs with semi-insulating behavior.
(3) Apart from the impurity and defect levels
mentioned above (Si, C and EL2), additional acceptor
levels and donor levels shallower than EL2 must be
taken into account. The existence of such donor levels
was confirmed by temperature-dependent Hall effect
measurements (Fig. 5). In agreement with deep-level
transient spectroscopy on low resistivity samples, the
donor levels were identified as EL6 defects or mem-
bers of the EL6 group [12].
The EL2 concentration shows an average value of
(0.85_0.15)× 1016 cm -3, which is typical for VGF
n in
10 ~'
10 '~"
10 '*'
10 '~
10 ,2
10 "
10 ,o
10 51
10 7 t
XKxxxx x
%°° i
a° j
°o !
E.~ = 0.16-0.24 eV
= 0.4. eV
= 0.76 eV
n~= 1 017.., 10_~Scm-'
i I '
1/T in K -1
Fig. 5. Temperature dependence of the carrier concentration on
different VGF samples.
6.00 6.00
r..O 4.00
÷ ÷ ÷ ~8-
a 0
0.00 r 0.00
0.00 20.00 40.00
o O
Fig. 6. Radial distribution of carrier concentration n and
mobility kt of a semi-insulating VGF wafer.
Page 4
E. Buhrig et al. / Materials Science and Engineering B28 (1994) 87-90
GaAs material [3, 5]. The electrical uniformity of a
semi-insulating wafer is shown in Fig. 6.
By annealing experiments, low resistivity samples
can be transformed to semi-insulating behavior (see
Table 1) similarly to what was reported by other
researchers [13]. The related mechanism is not yet
clear; possibly new acceptors are formed. The mobility
values vary over a wide range. The low values of the
measured mobility in the annealed semi-insulating
samples are probably due to the effect of mixed con-
ductivity of electrons and holes.
4. Summary
We successfully grew undoped GaAs single crystals
at a very low temperature gradient using the VGF
method. The dislocation density was reduced to an
EPD of about 500 cm -2. TEM investigations showed
that the dislocations are stretched between precipitates
owing to low thermal stress. The decorations are
arsenic tetrahedra. Because of the high Si content
originating from the quartz ampoule it is difficult to
grow semi-insulating GaAs.
wafers show a good uniformity of electrical properties.
Semi-insulating VGF
This work was supported by the Bundesministerium
f/ir Forschung und Technologie and Deutsche Agentur
fiir Raumfahrtangelegenheiten GmbH.
[1] T. Kawase et al., Proc. Conf. on Semi-Insulating IlI-V
Materials, Ixtapa, 1992, IOP, Bristol, 1993, p. 85.
[2] J.E. Clemens and J.H. Conway, Proc. Conf. on Semi-
Insulating lll-V Materials, Malm6, 1988, 1988, p. 205.
[3] R.E. Kremer, D. Franeomano, G.H. Beckhart and K.M.
Burke, J. Mater. Res., 5 (1990) 1468.
I4] K. Fujii, M. Hirata, H. Fujita and S. Takeda, in K. Sumeno
(ed.), Defect Control in Semiconductors, North-Holland,
Amsterdam, 1990, p. 667.
[5] D.C. Look, D.C. Walters, M.G. Mier, I.S. Sewell, I.S.
Sizelove, A. Akselrad and I.E. Clemans, J. Appl. Phys., 66
(1989) 1000.
[6] K. Hein, E. Buhrig and H. G6hler, Cryst. Res. Technol., 27
[7] K. Hein, E. Buhrig and T. Richter, Cryst. Res. Technol., 27
(1992) 599.
[8] K. Hein, E. Buhrig and C. Frank, Metall., 47 (1993) 924.
[9] S. Hegewaid, K. Hein, C. Frank, E. Buhrig and M. John,
Cryst. Res. Technol., 29 (1994) 549.
[10] J.L. Weyher and J. van de Ven, J. Cryst. Growth, 78 (1986)
[11] J.G. Grabmaier and C.B. Watson, Phys. Status Solidi, 32
[12] G. Kiihnel and W. Siegel, Semicond. Sci. Technol., 6 (1991)
[13] B.E. Freidenreich, K.D. Bronsema, Z. Korzeniowski, B.
Nykiel, D. Francomano, J. Moore and R.E. Kremer, Proc.
Conf. on Semi-Insulating III-V Materials, Ixtapa, 1992,
1993, p. 105.
Volker Klemm


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Bailie Nicol Jarvie
|This article needs additional citations for verification. (September 2012)
Bailie Nicol Jarvie (colloquially BNJ) is a brand of whisky blended by The Glenmorangie Company in Scotland. It is named after a character in Walter Scott's novel Rob Roy. It is a blended Scotch whisky, which has a good following in Scotland, but is relatively unknown in other parts of the world.
On the label it claims "The Bailie Nicol Jarvie we believe, boasts the highest malt content of any blended Scotch whisky".
The Bailie Nicol Jarvie was first blended by Nicol Anderson & Co, a Glasgow-based whisky company that was acquired by the whisky company Macdonald & Muir of Leith in 1921. The whisky was named after a character in Sir Walter Scott's renowned novel Rob Roy – a bailie (magistrate) who tackled a sword-wielding Highland clansman in an inn at Clachan of Aberfoyle,[1] setting fire to his kilt with a red-hot poker.[2] The blend was particularly popular in the early 20th century.
The brand was relaunched in 1994 by Glenmorangie plc (as Macdonald & Muir had been renamed). The composition of the blend was changed from the original recipe due to market forces. Single malts from the Highlands, Islay and Speyside are blended together with a grain whisky from Ayrshire.[3] In comparison, many blended whiskies contain between 20-40 single malts. The minimum maturation time in a cask is six years and the final BNJ whisky contains 60% single malt and 40% grain whisky.[3]
The English newspaper The Independent ranked it as one of the "Top 10 Best Scotch Whiskies".[4]
It is available in Australia through 'Dan Murphy' stores, imported by Woolworths.
- ^ email@example.com. "Scotland from the Roadside - Aberfoyle". Ourscotland.co.uk. Retrieved 2013-08-30.
- ^ "Rob Roy, Complete by Sir Walter Scott - Full Text Free Book (Part 7/10)". Fullbooks.com. Retrieved 2013-08-30.
- ^ a b Dominic Roskrow (General Editor), 1001 Whiskies to Try Before You Die, London, 2012
- ^ "Bailie Nicol Jarvie An entirely different creature – light in style, clean". The Independent. 2009-01-22. Retrieved 2013-08-30.
|This Scotland-related article is a stub. You can help Wikipedia by expanding it.
|This whisky-related article is a stub. You can help Wikipedia by expanding it.


text:
Scary Missouri state Sen. Brian Nieves is in the "Dirty Dozen." But this list isn't one to be proud of. Nieves is one of 12 state legislators featured in the Southern Poverty Law Center's reported Attacking
the Constitution: State Legislators for Legal Immigration & the
Anti-Immigrant Movement.
Nieves made the cut for his members in State Legislators for Legal Immigration, a group that works closely with the Federation
for American Immigration Reform (FAIR), "which the SPLC has
designated as an anti-immigrant hate group because of its white
nationalist agenda and ties to racist groups." But what really landed Nieves on the list is his backing of a repeal of the 14th Amendment, which guarantees citizenship for all children born in the United States.
Nieves' bio on the site catalogs his crazy. By no means could it be comprehensive, but give this a read and then thank jebus that you live far, far away from him.
Although he is of Puerto Rican descent, Brian Nieves, a newly elected state senator and the former majority whip of Missouri's House of Representatives, reacted angrily in 2008 after President Obama suggested that American children learn Spanish in addition to English. The president, Nieves said, had "belittle[d] the feelings of the majority of Americans."
This January, Nieves threw what the Kansas City alternative newspaper The Pitch called "his first tantrum of the year" on the floor of the state Senate when he learned that Missouri's Democratic attorney general had built a Spanish-language website for that office in 2009. Nieves claimed it broke the state's "English only" law.
A self-described "Patriot candidate," Nieves says he is part of a "Patriot uprising" and even named his talk-radio show The Patriot Enclave. Nieves also is a major star of the film, "Don't Tread on Me -- the Rise of the Republic," which was produced by Patriot conspiracist Gary Franchi. In the film, Nieves says that "with the election of President Barack Hussein Obama ... I think people finally realized, 'Hey, this is our government; this is our nation, and we're going to take it back.' I think that's what gave birth to the Patriot uprising."
Nieves appears a dozen times in the film discussing state sovereignty alongside such hard-core members of the antigovernment movement as Alex Jones, a conspiracy-monger who believes the federal government was involved in the Oklahoma City bombing, and Richard Mack, the former Arizona sheriff who preaches that county sheriffs don't have to obey the federal government.
During a 2009 "Boot Camp" put on by the Show Me Patriots, Nieves warned darkly: "Sooner or later there's going to have to be a showdown. So be encouraged, be motivated ... because 30 years from now, somebody's going to ask you what you did during the Patriot uprising. ... And it's my prayer that you'll be able to say you were right in the middle of it and that you had a piece of this fight."
Nieves, who once described the torture technique of waterboarding as putting "a little water in the face," was allegedly in a real fight last year. The Kansas City Star reported on Aug. 9, 2010, that Nieves was at the center of a complaint made to police by a campaign worker for Nieves' opponent in the state Senate primary, Dick Stratman. When the staffer, Shawn Bell, stopped by Nieves' headquarters to congratulate the winner, Nieves allegedly threw Bell against a wall and then drew a gun on him. Bell alleged that Nieves then berated him, threatened to kill him, and asked him if he was wearing a "wire." Nieves then allegedly head-butted and slapped Bell, pulled him into an office where Nieves looked through Bell's phone, made him take off his shirt, and made Bell call his wife to apologize to her for things that happened during the campaign. No criminal charges were ever filed in the case.
In a rambling E-mail Nieves sent to supporters after the incident, he wrote: "We did something The Machine did not want done and for that the Nieves family is indeed being punished and made an example of!"
Read the full report here. Hat tip to Fired Up! Missouri.
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Thats pretty epic :)
:D banging tunes :D
It amazes me that someone, somewhere, heard the tune and thought "Mario Paint!"
She's up all night 'till it's done
I'm up all night to get stars
She's up 'cos Bowser wants fun
I'm up all night to get Peach free
:p I'M TOTALLY WORKING HARD AND NOT MAKING MARIO SONGS!
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text:
Benham, Kentucky
For population 25 years and over in Benham:
For population 15 years and over in Benham city:
Median real estate property taxes paid for housing units with mortgages in 2012: $585 (0.8%)
Nearest city with pop. 50,000+: Johnson City, TN (54.2 miles , pop. 55,469).
Nearest city with pop. 200,000+: Lexington-Fayette, KY (112.1 miles , pop. 260,512).
Nearest city with pop. 1,000,000+: Chicago, IL (421.2 miles , pop. 2,896,016).
Nearest cities: Cumberland, KY (1.4 miles ), Lynch, KY (1.4 miles ), Upper Clover, KY (2.8 miles) , Keokee, VA (2.8 miles ), Eolia, KY (2.8 miles) , Appalachia, VA (3.2 miles ), Daisy, KY (3.4 miles) , Big Stone Gap, VA (3.5 miles ).
Latitude: 36.96 N, Longitude: 82.95 W
City-data.com crime rate counts serious crimes more heavily. It adjusts for the number of visitors and daily workers commuting into cities.
(click on a table row to update graph)
Crime rate in Benham detailed stats: murders, rapes, robberies, assaults, burglaries, thefts, arson
Full-time law enforcement employees in 2012, including police officers: 2 (2 officers).
Benham tourist attractions:
Unemployment by year (%)
Population change in the 1990s: -78 (-11.5%).
Work and jobs in Benham: detailed stats about occupations, industries, unemployment, workers, commute
Average climate in Benham, Kentucky
Based on data reported by over 4,000 weather stations
Tornado activity:
Benham-area historical tornado activity is significantly below Kentucky state average. It is 56% smaller than the overall U.S. average.
On 5/9/1988, a category F3 (max. wind speeds 158-206 mph) tornado 46.1 miles away from the Benham city center killed one person and injured 15 people and caused between $5,000,000 and $50,000,000 in damages.
On 5/18/1995, a category F2 (max. wind speeds 113-157 mph) tornado 26.6 miles away from the city center caused between $50,000 and $500,000 in damages.
Earthquake activity:Benham-area historical earthquake activity is significantly above Kentucky state average. It is 59% smaller than the overall U.S. average.
On 11/30/1973 at 07:48:41, a magnitude 4.7 (4.7 MB, 4.6 ML, Class: Light, Intensity: IV - V) earthquake occurred 98.2 miles away from the city center
On 9/7/1988 at 02:28:09, a magnitude 4.6 (4.5 MB, 4.6 LG) earthquake occurred 96.0 miles away from Benham center
On 11/23/2006 at 10:42:57, a magnitude 4.3 (4.3 MB, 4.3 LG) earthquake occurred 55.6 miles away from the city center
On 11/2/2006 at 17:53:02, a magnitude 4.3 (4.3 MB, Depth: 0.6 mi) earthquake occurred 59.3 miles away from the city center
On 10/26/1995 at 00:37:28, a magnitude 4.0 (3.9 MB, 4.0 LG, Depth: 0.6 mi) earthquake occurred 11.1 miles away from Benham center
On 8/17/1990 at 21:01:17, a magnitude 4.0 (3.5 LG, 4.0 LG, Depth: 6.2 mi) earthquake occurred 24.4 miles away from the city center
Magnitude types: regional Lg-wave magnitude (LG), body-wave magnitude (MB), local magnitude (ML)
Natural disasters:The number of natural disasters in Harlan County (15) is greater than the US average (12).
Major Disasters (Presidential) Declared: 11
Emergencies Declared: 2
Causes of natural disasters: Floods: 8, Storms: 8, Tornadoes: 3, Snows: 2, Fires: 2, Freeze: 1, Mudslide: 1, Snowfall: 1, Wind: 1, Blizzard: 1, Flood: 1, Hurricane: 1, Tornado: 1, Winter Storm: 1 (Note: Some incidents may be assigned to more than one category).
Birthplace of: Bernie Bickerstaff - Basketball player-coach.
Hospitals/medical centers near Benham:
Political contributions by individuals in Benham, KY
Colleges/universities with over 2000 students nearest to Benham:
Drinking water stations with addresses in Benham and their reported violations in the past:BENHAM WATER PLANT (Population served: 1092, Surface_water):
Past monitoring violations:
Percentage of residents living in poverty in 2012: 9.0%
(9.6% for White Non-Hispanic residents, 0.0% for Black residents, 0.0% for other race residents, 0.0% for two or more races residents)
Average household size:
Percentage of family households:
Percentage of households with unmarried partners:
Likely homosexual households (counted as self-reported same-sex unmarried-partner households)
Detailed information about poverty and poor residents in Benham, KY
Benham compared to Kentucky state average:
Educational Attainment (%) in 2012
School Enrollment by Level of School (%) in 2012
Most commonly used house heating fuel:
Presidential Elections Results
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1996 Presidential Elections Results
2000 Presidential Elections Results
2004 Presidential Elections Results
2008 Presidential Elections Results
2012 Presidential Elections Results
Graphs represent county-level data. Detailed 2008 Election Results
Religion statistics for Benham city (based on Harlan County data)Percentage of population affiliated with a religious congregations: 49.44%
Breakdown of population affiliated with a religious congregations
Tables represent county-level data.
Food Environment Statistics:
Number of grocery stores: 10
Number of convenience stores (no gas): 2
Number of convenience stores (with gas): 13
Number of full-service restaurants: 8
Adult diabetes rate:
Adult obesity rate:
Low-income preschool obesity rate:
Benham government finances - Expenditure in 2002 (per resident):
Benham government finances - Revenue in 2002 (per resident):
Benham government finances - Debt in 2002 (per resident):
Benham government finances - Cash and Securities in 2002 (per resident):
3.72% of this county's 2006 resident taxpayers lived in other counties in 2005 ($24,572 average adjusted gross income)
10 or fewer of this county's residents moved from foreign countries between 2005 and 2006.
Top counties from which taxpayers relocated into this county between 2005 and 2006:
3.70% of this county's 2005 resident taxpayers moved to other counties in 2006 ($30,387 average adjusted gross income)
10 or fewer of this county's residents moved to foreign countries between 2005 and 2006.
Top counties to which taxpayers relocated from this county between 2005 and 2006:
Strongest AM radio stations in Benham:
Strongest FM radio stations in Benham:
TV broadcast stations around Benham:
Benham fatal accident list:
Nov 26, 1977 02:50 AM, Vehicles: 1, Persons: 2, Fatalities: 1, Drunken drivers: 1
FCC Registered Amateur Radio Licenses:1
FAA Registered Aircraft:1
Benham on our top lists:
State forum archive:
Back to Benham, KY housing info, Harlan County, Kentucky, KY smaller cities, KY small cities, All Cities.


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Bone Thugs-N-Harmony - Rebirth
Artist: Bone Thugs-N-Harmony
Producer: Pooh Bear & King David [for Blue Magic Productions]
Album: Uni:5 The World's Enemy
Avg Rating: 4.0 ( 45 votes )
After the debacle that was Weezy's rock debut, I expected the word "Rebirth" to fade from popular music's lexicon for a good, long while – the associations are just too painful to dredge up. Well, I was wrong. Like a phoenix, "Rebirth" has risen from the ashes to be reborn as the title of the second single off Bone Thugs-n-Harmony's long-awaited reunion album. This cut, which comes backed by the cinematic string-synth boardwork of Pooh Bear & King David, finds Krayzie, Bizzy, Layzie, Wish and Flesh singing a different tune than their last feature, the hard-partying Vegas. Here, the Bone brothers state their intent to turn the game upside-down and leave same-old, same-old rappers in the dust, delivering their uncompromising lyrical message in the rapid-fire flows fans know and love. Is Rebirth a worthy follow-up to the reader-acclaimed See Me Shine? You be the jury. Uni:5 The World's Enemy is currently set to drop March 2, but fans shouldn't be surprised if the long-awaited album is delayed – keep it locked to DJBooth for all the latest release details.
Written by richard on 02/17/10
Submit your Rating
BNTH Worldwide/Warner Bros.
First DJ Booth Appearance:
"Still No Surrender" (2006)
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Answering phones from 4pm to 2am
Everyday of the week
$1.50 a mile
$10.00 minimum
Answering phones from 4pm to 2am
Everyday of the week
- Clean SUV seats up to 4 people comfortably
- Plenty of room for luggage
- Ski rack and trailer hitch
- Roadside emergency gear
- Friendly Professionalism
$1.50 a mile
$10.00 minimum
Taos Cab Company's First Annual Fund Drive is happening now!
please note I am taking the donations under the name Astral Island Studio because I am an artist and that is my current Paypal name. I will fix this asap. Thank you for understanding. ~ M.N.
Taos Cab Company LLC,
has been the only cab service offering service after hours for over two years.
I Michael North have personally saved many people from fights, getting arrested, stranded at the hospital, stranded on the roadside in sub zero weather in the middle of the night when no one else but the police could help them. Only the Spirit of Taos that watches over this town knows how many lives I have saved.
You can help us continue our badly needed service by using us or by donating to our fund raising event. Once we reach our goal of $10,000 we can expand our operations to serve the entire Taos County Area 24/7/365.
Give visitors a reason to come here knowing they can get back to their hotel room when the bar has closed and they are now out in the snow at 2am, too impaired to drive. People must think "Taos has been voted the best place in NM to visit yet we don't even have a cab service to get impaired visitors back to their hotel? really??".
Considering how hard it is to drive these mountain roads at night in the snow, with the wild life, rock slides, ice, the fact the Interstate is about 100 miles away, we have no rail and the airport is very small, we really do need a 24 hour cab service like most towns to not only get around but to get to and from the nearest train depo in Santa Fe at any time of night without reservations.
Just by reaching the $200 mark means we can form nmcpdui.org a non-profit organization and all donations can then be a tax break. See the future of Taos Cab page for more information on how our service can help your business save money, help sell more products, or get more customers.
The County Deputy Manager has told me they are standing by to start a DUI program that will get people home from the bar for a dollar and Tina at the Taos News is ready to do a full story on it all once we have reached our goal!
But we need your help to make it happen.
For more info call Michael North at 505-901-7604


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(Updates with Paris Air Show orders in sixth paragraph.)
June 15 (Bloomberg) -- General Electric Co.'s narrowbody- engine venture won placement of its new Leap-X model on upgraded Airbus SAS jets for Virgin America Inc., ending rival Pratt & Whitney's solo run on the more fuel-efficient plane.
Virgin America's order from CFM International, a joint venture of GE and Safran SA of France, is valued at $1.4 billion at engine list prices, the companies said today. It includes Leap-X engines to power 30 A320neos and CFM56-5B models for 30 existing A320 jets. Burlingame, California-based Virgin America said in January it would triple its fleet.
The airline, partly owned by U.K. billionaire Richard Branson, will be the first carrier to use the Leap-X commercially, signaling confidence in the model after Pratt & Whitney's geared turbofan won the first wave of orders on the upgraded A320neo earlier this year. CFM engines already power half of all narrow-body aircraft including Virgin's current fleet, according to market researcher Ascend.
"They've never had a failed engine program," Virgin American Chief Executive Officer David Cush said in a telephone interview. "Their engines always come in on time, on price and within the performance envelope they describe."
The new engines will save as much as $1.9 million per aircraft with the inclusion of sharklets, wingtip devices that reduce aerodynamic drag, Virgin said. That estimate assumes 18 percent less jet-fuel usage and a price of $2.98 a gallon, Virgin said.
'Better Takeoff Performance'
International Lease Finance Corp., the plane-leasing unit of American International Group Inc., is set to announce plans to put the Leap-X on 40 A320neo aircraft, and more orders are expected at the Paris Air Show, people familiar with the situation said earlier this month.
Virgin, which recently began offering flights to Chicago from Los Angeles and San Francisco, will be able to fly longer routes using the A320neo, Cush said. The plane is also more practical for short take-offs.
"This allows us to fly missions that the current A320 cannot fly -- it would allow us to fly to Hawaii from the West Coast," Cush said. "It gives us better takeoff performance out of short runways in places like Reagan National or even LaGuardia."
Virgin considered its engine options carefully, Cush said. The carrier was also in discussions with Pratt & Whitney for about a year, and the talks intensified in the past few months.
'Compelling Offer'
"Pratt & Whitney put a very compelling offer on the table," he said. "We looked at the geared turbofan. Ultimately CFM just had a more compelling offer."
While neither engine maker disclosed a list price, analysts including Teal Group estimate CFM's Leap-X and Pratt's geared turbofan carry a price tag of $12 million to $13 million. Airlines rarely pay list prices for engines, instead negotiating discounts for bulk purchases.
The Leap-X relies on improvements in the engine's core, or hot section, to help cut fuel consumption, while the geared turbofan uses a gear to slow the outer fan of the engine, adding efficiency and reducing noise. Leap-X's technology is partly based on GE's GEnx engine, which is a choice on the Boeing Co. 787 Dreamliner.
Fairfield, Connecticut-based GE is the world's largest maker of jet engines. Pratt & Whitney is a unit of Hartford, Connecticut-based United Technologies Corp.
--Editors: James Langford, Stephen West
To contact the reporter on this story: Rachel Layne in Boston at firstname.lastname@example.com
To contact the editor responsible for this story: Ed Dufner at email@example.com


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I have been involved in Moving Day since the planning stages of our inaugural event in 2012. What an amazing day of hope, camaraderie, and charity.
I'd love to have you join me this year:
Sunday, September 28, 2014
Columbus Crew Stadium
If you aren't able to attend, I encourage you to invest in our organization by contributing to Team HCA! As a member of the Board of Trustees for the National Parkinson Foundation Central and Southeast Ohio, I know how much wonderful work is done in our community to help people with Parkinson's and their families.
I appreciate your support.