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The IGFET is formed on a GaAs wafer which is coated with a layer of Si3 N4 and a SiO2 layer. The SiO2 is etched away in transistor areas, and ion implanting provides channel doping. A gate of refractory metal such as Mo is deposited and delineated. The gate and the SiO2 act as masks for ion implantation of the source and drain. The refractory metal gate allows subsequent annealing at high temperatures to activate the ion implanted species.
1. A self-aligned process for fabricating a semiconductor device which comprises the steps of:
a. providing a semi-insulating GaAs substrate;
b. coating the substrate with a plasma enhanced deposited Si3 N4 layer and a SiO2 layer;
c. etching off the SiO2 layer in areas where transistors will be located;
d. ion implanting, with the SiO2 layer acting as a mask, which provides channel doping;
e. depositing and delineating a gate of conductive refractory material;
f. forming source and drain regions by ion implantation to provide n+ region extending to the gate region, with the SiO2 layer and the gate acting as masks;
g. annealing with the Si3 N4 acting as an annealing cap;
h. etching holes into the Si3 N4 for source and drain contacts, depositing the source and drain contacts and sintering the device for activation of these contacts.
2. The process of claim 1, wherein said gate is made of Mo, and said SiO2 layer is phosphorous doped.
3. The process of claim 1 or 2, wherein the implantation species in steps d and f is Se at 400 keV.
4. The process of claim 3, wherein the ion implantation dose in step d has a typical value of 2�1012 ions cm-2, and in step f a value of 5�1013 ions cm-2.
5. The process of claim 1 or 2, where the annealing of step g is performed at 800� C. for 30 minutes.
6. The process of claim 5, wherein the contact metal used in step h is a Au-Ge-Ni film, the sintering being performed at 400� C. for 1 minute.
7. The process of claim 6, wherein the implantation species of steps d and f is Se at 400 keV, the implantation dose in step d having a typical value of 2�1012 ions cm-2, and in step f a value of 5�1013 ions cm-2.
8. The process of claim 1 or 2, further including a step following step d of removing the Si3 N4 and then depositing a new Si3 N4 film which is thinner than the original.
9. The process of claim 1 or 2, further including a step before the annealing step g of depositing another dielectric film over the entire structure.
10. The process of claim 9, wherein said another dielectric film is Si3 N4.
11. The process of claim 9, wherein said another dielectric film is SiO2.
12. A self-aligned process for fabricating a semiconductor device which comprises the steps of:
a. providing a semi-insulating GaAs substrate on which there is an n-type epimaterial layer, into which mesa structures are then etched through the epimaterial layer, with the top of each mesa retaining the epimaterial layer for an active transistor area;
b. coating the substrate with plasma enhanced deposited Si3 N4 and a SiO2 layer, and etching away the SiO2 layer over the transistor area;
c. depositing and delineating a gate of conductive refractory material in the transistor area;
d. forming source and drain regions in the transistor area on opposite sides of the gate by ion implantation, with the SiO2 layer and the gate acting as masks;
e. annealing; and
f. forming source and drain contacts.
13. A self-aligned process for fabricating a semiconductor device which comprises the steps of:
a. providing a semi-insulating GaAs substrate, coated with Si3 N4 and then a SiO2 layer, the SiO2 layer being etched away and an active layer of the GaAs substrate being n-type doped in areas formed where transistors will be located;
b. depositing and delineating a gate of conductive material in said doped area; and
c. forming source and drain regions by ion implantation of a species to form an n+ region, with the gate acting as a mask.
14. The process of claim 13, wherein the gate is formed from conductive material consisting of material selected from n-type poly Si and MoSi2.
15. The process of claim 14, wherein the SiO2 layer is grown thermally in an oxidation process, which acts as a passivation to the conductive material and also forms an insulator between a next level metallization, and wherein the oxidation process activates the implanted species.
The invention described herein may be manufactured and used by or for the Government of the United States for all governmental purposes without the payment of any royalty.
This invention relates to an improved self-aligned insulated gate field effect transistor (IGFET) and method for fabricating that device.
Self-alignment techniques are used routinely in silicon technology. These self-aligned IGFETs have reduced source and drain resistance over the non-self-aligned structures, resulting in improved performance. Examples are shown in U.S. Pat. No. by Dennard, 4,182,636 and by Lund et al, U.S. Pat. No. 4,319,395.
There is a need for ultrahigh speed electronic devices, in fields such as airborne radar and communication systems. It is anticipated that GaAs IGFETs will become an important part of these systems. Meiners U.S. Pat. No. 4,268,844 discloses an IGFET capable of operation at frequencies in excess of one GHz. The transistor substrate is a semi-insulating semiconductor which may be formed of Cr-doped GaAs, Tsang U.S. Pat. No. 4,291,327 forms IGFETs by growing a layer of controlled thickness on GaAs. Hughes et al U.S. Pat. No. 4,325,073 and Casey, Jr., U.S. Pat. No. 4,160,261 both disclose method of forming GaAs FETs.
The use of GaAs IGFETs with large interface state densities is described in my copending U.S. patent application Ser. No. 271,754 filed June 9, 1981, now U.S. Pat. No. 4,438,351 issued Mar. 20, 1984.
An object of this invention is to provide GaAs IGFETs having reduced source and drain resistance, to increase the gain and performance.
According to the invention, a self-alignment technique is used to fabricate GaAs metal insulator semiconductor (MIS) structures, also known as IGFETs. The crucial part of this structure is to use a refractory metal or a poly Si/metal silicide gate over a Si3 N4 insulator. This gate structure allows subsequent annealing at high temperatures to activate ion implanted species.
FIGS. 1-5 are diagrams showing steps in the fabrication of a self-aligned GaAs IGFET.
FIGS. 6-9 are diagrams showing initial steps in the fabrication of an alternative embodiment.
It is known that source resistance and drain resistance decrease the performance of field effect transistors (FETs). The gain of the FET is reduced by the source resistance Rs according to Gm =Gm 1 /(1+Gm 1 Rs) where Gm 1 is the gain for a FET with Rs =0. Furthermore, the switching speed of a transistor depends on the on-resistance of the transistor with improved speed performance for FETs with small values of on-resistance. The source and drain resistance of these FETs add to the on-resistance. Hence, minimum source and drain resistance is required for optimum performance of the FETs.
Self-alignment techniques have been developed for Si MOSFET technology. The predominantly used technology is the so-called Si-gate technology. Here, the transistor is fabricated up to the gate level. An ion implantation step is then used to form highly conductive areas for source and drain. In this ion implantation step, the gate acts as a mask for the ions and consequently the highly conductive areas extend up to the gate area, thereby reducing source and drain resistance. After implantation, the wafers are annealed for activation of the implanted species.
The preferred embodiment for the self-aligned GaAs IGFET is described now:
The starting material is properly polished, etched and cleaned semi-insulating (100) GaAs 10. Polishing, etching and cleaning methods for GaAs are well known. The GaAs must be selected such that it does not invert upon high temperature processing. The processing steps are shown in FIGS. 1-5. In FIG. 1, the semi-insulating GaAs wafer 10 has been coated with approximately 100 nm of a plasma enhanced deposited Si3 N4 layer 12 and a phosphorous-doped 1 μm thick SiO2 layer 14. The SiO2 film is then etched off in the areas where the transistors will be located and the SiO2 is reflown at elevated temperatures to eliminate sharp steps. Techniques for the above described steps are well known. The SiO2 film allows the metallization pattern to run on a relatively low dielectric constant material (εSiO2 =3.9; εGaAs=10.9). Consequently, capacitance effects between lines are minimized. The SiO2 film also provides alignment marks for subsequent processes. Next, the sample is ion implanted with the SiO2 film 14 acting as a mask (FIG. 2). The preferred implantation species is Se at 400 keV. The dose required depends on the threshold voltage and conductance values desired. A 2�1012 ions cm-2 is a typical value. This ion implantation step provides the channel doping. The fabrication process is continued by deposition and delineation of the gate 16. The preferred metal for the gate is Mo with a thickness of approximately 500 nm. A typical gate length is 1 μm. The gate is delineated with commonly used techniques such as lift-off (FIG. 3). Next, the source and drain region are implanted to provide an n+region extending to the gate region from source and drain. For this ion implantation the SiO2 and the gate act as masks. Again, the preferred species is Se, implanted at 400 keV with a 5�1013 ions cm-2 dose (FIG. 4). Now the sample is annealed with the originally deposited Si3 N4 acting as an annealing cap. The annealing is performed in this preferred process at 800� C. for 30 minutes. This annealing is performed in order to activate the species, implanted during the two previous implantation processes. The FET is completed by etching holes into the Si3 N4 for source and drain contacts 18 and 20, to deposit source and drain and to sinter the device for activation of these contacts (FIG. 5). Commonly used contact metal is a Au-Ge-Ni film. The sintering is performed at 400� C. for 1 minute.
There exists many variations to this process. Some are listed below. An n-type epi-material may be used as a starting material and mesa structures are then etched in this sample. This allows the omission of the first ion implantation since the channel doping is already present. Another variation to the process would be the use of different implantation species, such as Si. A further variation to the process would be to remove the Si3 N4 over the device area after the first ion implantation and then to deposit a new Si3 N4 film. This film may be thinner than the original (say 500A) for reduced threshold voltage. Yet another variation would be to deposit another dielectric film over the entire structure, such as Si3 N4 or SiO2 before annealing. This insulator would provide an insulation for a possible further metallization layer. A final variation would be to use a different gate metal system, e.g., an n-type poly Si or MoSi2 system. An advantage of this system would be that a SiO2 film can be grown thermally, which acts as a passivation to the metal system and also forms an insulator between a next level metallization. The oxidation process may be able to activate the implanted species and the annealing process may be eliminated.
The embodiment using an n-type epi-material and mesa structures is shown in FIGS. 5-9 (in place of FIGS. 1 & 2), which is followed by the steps shown in FIGS. 3-5. As shown in FIG. 9, the starting material is a semi-insulating substrate 10a, on which there is a layer 11 of n-type epitaxial material. As shown in FIG. 7, mesas are formed by etching through the epi layer 11 into the semi-insulating layer 10a. The top of each mesa is used for forming one active transistor area. As shown in FIG. 8, the next step comprises coating the substrate with plasma enhanced deposited Si3 N4 and a SiO2 layer. Next the SiO2 layer is etched away over the transistor area on the mesa, as shown in FIG. 9. The process of forming the transistor then continues as shown in FIGS. 3, 4 and 5.
Thus, while preferred constructional features of the invention are embodied in the structure illustrated herein, it is to be understood that changes and variations may be made by the skilled in the art without departing from the spirit and scope of my invention.
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The Blog
The Man in the Mirror
Some questions Senator Chuck Schumer should ask himself about the DSCC's invasions of privacy.
12:00 AM, Sep 28, 2005 • By EDWARD MORRISSEY
Q: Do you have a policy when someone's identity has been stolen--this is a question--about notifying law enforcement immediately?
Perhaps Schumer could then enlighten us about how much time it took between when Steele's SSN and credit report got stolen, and when the DSCC reported it to the federal authorities.
Q: How is it that the CEO of the company didn't know that [Steele's information] had been stolen until a couple of months later?
Or did Schumer know about it all along, and conspire to keep it quiet? We should look forward to Schumer demanding an answer of himself, just as he demanded answers from McGuffey.
Q: Let me ask you another one. Have there been other incidents where [the DSCC and its chair] has been aware that people's identities have been stolen but that hasn't been made public?
Should any other up-and-coming Republican contenders check to see if someone has accessed their records? Perhaps Mark Kennedy, who has already announced for Mark Dayton's open seat in Minnesota, might want to review his records to see if any unauthorized queries have been made into his records.
Q: Let me ask you about your executives. You know, this sort of stinks from the head.
What about the DSCC executives, such as Schumer? After all, they hired Katie Barge as their head of research with quite a substantial résumé in this field of expertise. She led the opposition research team for John Edwards, and before that did similar work for David Brock at Media Matters, according to the leftist website Common Dreams. What exactly did the executives at the DSCC direct Barge to do in regards to Steele and other likely Senatorial opponents? What did she do for John Edwards during the last campaign? Did the DSCC hire her for her ability to dig out dirt using illegal credit reports?
Q: I'll tell you what else I think. I don't know what the law is here, but from an ethical point of view, you're dealing with important valuables about people. Your attitude has been casual, to say the least, and that's putting it kindly.
Keeping two staffers on paid leave of absence after breaking federal laws on privacy--especially when data privacy happens to be a specialty of Senator Schumer--does indicate a casual approach to practicing what Schumer preaches. Schumer should demand to know who made the decision to keep paying two people who committed felonies in the name of the organization he chairs.
Edward Morrissey is a contributing writer to The Daily Standard and a contributor to the blog Captain's Quarters.

subset: commoncrawl


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Home Styles Americana Kitchen Island with Granite Top
Step into a comfortable surrounding that is Americana. Rustic design elements are apparent in the strong lines of the raised panel doors and hand-applied antiqued white rubbed through finish providing an aged worn look. Constructed of hardwood solids and engineered wood with a 0.75" inlay granite top. The Americana Granite Kitchen Island features a physically distressed oak finished top featuring worm holes, fly specking, and small indentations, with a salt and pepper granite inset. Other features include two push through drawers, three shelves (two adjustable), doors on both sides and canted legs. Beautifully accented with aged brass hardware.
Home Styles Americana Kitchen Island with Granite Top
Weights & Dimensions
|Product Type: Kitchen Island
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|Distressed: Yes
|Base Material: Manufactured wood
|Counter Material: Manufactured wood
|Solid Wood Construction: No
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|Drawers Included: Yes
|Cabinets Included: Yes
|Shape: Rectangular
|Country of Manufacture: Thailand
About the ManufacturerSince 1998 Home Styles has merged highly functional, great-looking design with the affordability of ready-to-assemble furniture. Versatile styling and classic finishes make their furniture an ideal complement to traditional and contemporary decor. The collections not only look good, but offer innovative functionalities in storage and configuration. Hardwood construction and quality hardware offer resilience through years of use.
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text:
A log-periodic antenna having a layer of dielectric media interposed between a microstrip log-periodic portion and a slot log-periodic portion where an array of two or more log-periodic antennas that may be placed about vehicles, such as air vehicles, or mounted on stationary structures, such as communication towers.
1. A radio frequency (RF) receiving apparatus comprising:
an RF receiver and a plurality of antenna elements;
wherein a first antenna element of the plurality of antenna elements is a log-periodic antenna element comprising:
a slot log-periodic antenna portion in proximity to a microstrip log-periodic antenna portion, wherein a dielectric medium is interposed between the slot log-periodic antenna portion and the microstrip log-periodic antenna portion.
2. The RF receiving apparatus of
3. The RF receiving apparatus of
4. The RF receiving apparatus of
5. The RF receiving apparatus of
6. The RF receiving apparatus of
7. The RF receiving apparatus of
8. The RF receiving apparatus of
9. A radio frequency (RF) receiving apparatus of
wherein a first antenna element of the plurality of antenna elements has a first phase center oriented in a first direction; and
wherein the plurality of antenna elements further comprises a second antenna element, proximate to the first antenna element, having a second phase center oriented in a second direction substantially opposite the first direction, the second antenna element is a log-periodic antenna element comprising:
a second slot log-periodic antenna portion in planar proximity to a second microstrip log-periodic antenna portion, wherein the dielectric medium is interposed between the second slot log-periodic antenna portion and the second microstrip log-periodic antenna portion.
10. The RF receiving apparatus of
11. The RF receiving apparatus of
12. The RF receiving apparatus of
13. The RF receiving apparatus of
14. The RF receiving apparatus of
15. The RF receiving apparatus of
16. The RF receiving apparatus of
17. A radio frequency (RF) transmitting apparatus comprising:
an RF transmitter and a plurality of antenna elements;
wherein a first antenna element of the plurality of antenna elements is a log-periodic antenna element comprising:
a slot log-periodic antenna portion in proximity to a microstrip log-periodic antenna portion, wherein a dielectric medium is interposed between the slot log-periodic antenna portion and the microstrip log-periodic antenna portion.
18. The RF transmitting apparatus of
19. The RF transmitting apparatus of
20. The RF transmitting apparatus of
21. The RF transmitting apparatus of
22. The RF transmitting apparatus of
23. The RF transmitting apparatus of
24. The RF transmitting apparatus of
This application is a continuation-in-part of application Ser. No. 11/163,119, filed Oct. 5, 2005, now U.S Pat. No. 7,292,197, issued Nov. 6, 2007, which claims the benefit of U. S. Provisional Patent Application Ser. No. 60/617,454, filed Oct. 8, 2004, the disclosures of which are hereby incorporated by reference herein, in their entirety, for all purposes.
The present invention, in its several embodiments, relates to receiving and transmitting apparatuses that include microstrip log-periodic antennas and, more particularly, to such apparatuses that include microstrip-slot log-periodic antennas.
The present practicable range of radio frequency (RF) is approximately 10 kHz to 100 GHz, i.e., 0.01 to 100,000 MHz. Within this frequency range electromagnetic radiation may be detected, typically by an antenna, and amplified as an electric current at the wave frequency. When energized via electric current at an RF wave frequency, an antenna may emit in the RF electromagnetic radiation at the RF wave frequency. Log-periodic antennas are typically characterized as having logarithmic-periodic, electrically conducting, elements that may receive and/or transmit communication signals where the relative dimensions of each dipole antenna element and the spacing between elements are logarithmically related to the frequency range over which the antenna operates. Log-periodic dipole antennas may be fabricated using printed circuit boards where the elements of the antenna are fabricated in, conformal to, or on, a surface layer of an insulating substrate. The antenna elements are typically formed on a common plane of a substrate such that the principal beam axis, or direction of travel for the phase centers for increasing frequency of the antenna, is in the same direction. The antenna elements may be placed in electrical communication with an RF receiver and/or an RF transmitter. The analog and digital processing of the detected RF waveform is typically performed by an RF receiver and the analog and digital processing of the transmitted RF waveform is typically performed by an RF transmitter.
The invention in its several embodiments includes radio frequency (RF) receiving and/or transmitting systems or apparatuses having a log-periodic antenna having a dielectric medium such as a printed circuit board interposed between a microstrip log-periodic portion and a proximate slot log-periodic portion. A perimeter of the microstrip log-periodic portion may be undersized relative to a perimeter of a first slot log-periodic antenna portion and a proximate distance between an outer perimeter of the first microstrip log-periodic antenna portion and the perimeter of the first slot log-periodic antenna portion, perpendicular to a second surface may be referenced to bound a first impedance gap. The invention in its several embodiments may further include an antenna having a curvilinear, electrically conductive feed line and a substantially co-extensive curvilinear slot transmission line. Embodiments of the invention may further include an array of two or more log-periodic antennas mounted in alternating phase center orientations. Accordingly, a log-periodic antenna element having a layer of dielectric media interposed between a microstrip log-periodic portion and a slot log-periodic portion may be disposed in an array having two or more like elements that may be placed about vehicles, such as land vehicles, water vehicles and air vehicles, or mounted on stationary structures, such as communication towers. In addition, single or pairs of elements may be mounted to mobile receiving, transmitting, and/or transceiving apparatuses such as vehicles and human-portable interface devices such as mobile telephones and wireless personal data assistants.
Reference is now made to the following description taken in conjunction with the accompanying drawings, in which:
As used herein, the term �exemplary� means by way of example and to facilitate the understanding of the reader, and does not indicate any particular preference for a particular element, feature, configuration or sequence.
The present invention, in its several embodiments, include a log-periodic antenna having microstrip slot elements on a first, or top, side of a dielectric medium and a slot ground plane of the elements on a second, or bottom, side of the dielectric medium, where the radiating elements are oriented with alternating and opposing phases, e.g., 180 degrees phase differences, and where the combination may operate as a broadband log-periodic antenna. In addition, the present invention in its several embodiments may have a grounded modified semi-coplanar waveguide-to-microstrip line transition. A feed input of some embodiments typically has a transition from an unbalanced microstrip transmission line and may have a microstrip feed transmission line tapering from a base microstrip slot dipole element on a top side of the dielectric medium and a slotted ground plane under the transmission line tapering from a primary slot dipole element in a ground plane medium on the bottom side of the dielectric medium. Exemplary embodiments of the microstrip transmission line have a primary conductor strip in voltage opposition to a reference ground plane with an interceding dielectric between the two conductors. For example, the element embodiment may be fed by two slot lines in parallel that have as a common potential a main conductor. The main conductor typically tapers to a width that sets an impedance of the microstrip transmission line and along the same length, a void or slot in the ground plane is tapered to a zero width or corner point. In some embodiments, these tapered regions operate to transition the field line from being substantially between the microstrip conductor and the ground plane as in a capacitor, to being substantially fringing fields between the edges of the conductors passing through the dielectric.
Exemplary array embodiments of the present invention typically include an array of at least a pair of substantially frequency-independent planar antenna array elements where a first member of the pair of antenna array elements has a phase center axis substantially opposite in direction to the phase center axis of a second member of the pair of antenna array elements. The antenna element patterns may be aligned, i.e., top plan-form relative to bottom plan-form, which forms a microstrip log-periodic array (MSLPA) having a principal axis. Each MSLPA typically includes a slot transmission line running along the principal axis of the MSLPA that may function as feeds for the slot dipole elements the typically trapezoidal elements emanating in bilateral symmetry from the transmission line. In some embodiments, parasitic, or center, microstrip lines or slots may be interposed within the regions formed by the slot dipole elements and the transmission line of the combined layers. The outer perimeter of the feed side of the MSLPA typically describes a pattern or plan-form, the ground plane side of the log-periodic slot array typically then covers a pattern of the perimeter of each feed side microstrip line element of the top side and along with some additional width at substantially perpendicular to the perimeter to establish an impedance slot.
For purposes of illustrating the slot portions of the slot log-periodic antenna portion 200, the elements of the array are numbered starting with the slot dipole element of largest wavelength 220, that is, the element having the exemplary largest transverse span. The maximal radial distance from the reference origin O for the first dipole may be represented as R1. The maximal radial distance from the reference origin O for the second dipole may be represented as R2. The minimal distance from the reference origin O for the first dipole may be represented as r1 less the impedance slot width. A similar relationship may be made for radial distances R2 and r2. Typically, the feeder transmission line angle of the microstrip, or top portion is smaller than the angle of 2β plus the angle increment (e.g., 2β), required for impedance slot width of the ground side of the dielectric medium, and likewise the angle 2α bottom plus the angle increments 2β of the ground side required for impedance slot width is greater than 2α of the top side. Rather than expressed by the angle δ, this may be expressed as the linear distance w when viewing the planar projections of the microstrip dipole elements and the slot dipole elements in plan view.
For each exemplary pair of top and bottom trapezoidal dipole elements, an impedance slot may be created as shown in the top view of the antenna of
Another antenna embodiment is described as follows where w represents the planar width of the impedance slot, τ represents the element expansion ratio, and ∈ represents a measure of tooth width in the following equations:
An �over angle� subtended by the completed antenna may be represented 2α+2δ. Exemplary relationships include an ∈ of √{square root over (τ)}, a β of αSL/3, and an αSL Of (α+δ)/2.
Exemplary antenna array properties include a value for the over angle, or 2α+2δ of approximately 36 degrees, a value for 2α of approximately 33 degrees, a value for 2αSL of approximately 18 degrees, and a value for 2β of approximately 6 degrees.
Exemplary antenna array properties are illustrated in Table 1 with distances in inches for dipole teeth numbered 1-19:
The present invention, in its several embodiments, typically has the antenna structurally divided into two portions on either side of a mounting medium, such as a two-sided PCB. The two-sided printed circuit board embodiment accommodates an exemplary feed described below. That is, a feed transition from a microstrip to radiating elements may be fabricated with a dielectric medium, such as a two-sided printed circuit board and a tapered ground. In addition to the various feed embodiments, the two-sided PCB structure and material provide additional means by which the antenna impedance of the several antenna embodiments may be controlled, for example, by variation of material thickness and by selection of a dielectric constant of the PCB. Due to a field constraint within the dielectric material, high power, high frequency alternative embodiments of the present invention may exploit the increased breakdown characteristics of the higher frequency, i.e., the smaller wavelength, portion of the antennas.
The antenna array elements of the several embodiments may be mounted above a grounded cavity, or other receiving element, which provides both grounding and feed lines such as the coaxial conductor example described above. Illustrated in
The antenna array element 100, the radio frequency absorber element 620, and a low dielectric element may be bonded together. For environmentally challenging environments, such as for example those encountered in moisture laden atmosphere with high dynamic pressures experienced at supersonic velocities, a cover 640, skin, or radome may be used to shield, or protect, or otherwise cover all or a portion of the top surface 125 or outwardly directed portion of the antenna array element, a covered portion that may include the top side 125 of the dielectric medium 120, thereby covering a region that could or would otherwise be in direct environmental contact with free space, for example. The microstrip line array of the top side 125 and the ground plane slots of the bottom side of the array may be fabricated on a low loss, low dielectric substrate, e.g., RT5880 DUROID�, a substrate available from Rogers Corporation, Advanced Circuit Materials Division, of Chandler, Ariz., or may be fabricated of equivalently low dielectric materials at thickness of around 15 mils, for example. Other thickness ranges may be used depending on the properties of the low dielectric material and a desired gap 310 (
The substantially planar profile of the antenna array may exhibit some curvature and, whether flat or contoured, may be conformally mounted. In those geometries requiring conformal mounting about a radius of curvature, the transverse edges of the otherwise typically trapezoidal dipole elements are themselves typically curved to accommodate a curved printed circuit board surface that may then conform to a selected mounting geometry.
The several embodiments of the invention have gain and pattern properties, which are typically robust with respect to an effect of cavity depth on the elements. For example, a cavity with an absorber-lined bottom surface and metal back negligibly affects on the antenna gain and pattern properties where cavity depth is at a minimum of 0.1 lambda, i.e., one-tenth of a wavelength of the frequency in question. Put another way, the exemplary embodiments may be configured to experience a slight loss of antenna gain or antenna gain-angle pattern distortion for cavities shorter than one-tenth lambda with a corresponding change in the input voltage standing wave ratio (VSWR).
Microstrip Feed Structure
Some high power, high frequency applications of the several embodiments may experience an increase in the breakdown characteristics of the high frequency portion of the elements. Exemplary feed structure embodiments readily accommodate elements operating from frequencies below X-band through well into the Ka-band. In order to accommodate structures into the upper Ka-band, micro-etching techniques are typically applied. At these higher frequencies, material thicknesses are typically reduced from those accommodating X-band antenna embodiments.
Each of the antenna array elements typically includes a microstrip feed structure that splits and feeds to the two-sided antenna array element. Some embodiments of the feed structure combine microstrip feed lines with a tapered ground transition and the two-sided antenna element. Typically the feed structure includes a microstrip feed line having a tapered ground transition.
Receiving, Transmitting and Transceiving
The antenna array embodiments of the present invention may provide substantially constant forward directivity, typically with only subtle or otherwise operationally negligible changes in beam-width, and afford an antenna array of forward and aft facing elements of equal or nearly equal performance. For purposes of illustrating the performance of an embodiment of the present invention, the antenna array of forward-oriented and aft-oriented element arrays where the MSLPAs have fifteen trapezoidal dipole elements, i.e., teeth, and one base tapered trapezoidal dipole element were tested.
The antenna pairs 500 (
The antenna element embodiments are suitable for conformal mounting, for example, structures shaped principally for low drag properties such as those shapes found in air vehicles and land and marine vehicles having application sensitive to dynamic pressure conditions and disruptions of laminar flow patterns. Accordingly, an exemplary mounting site for one or more antenna elements may be a portion of a rocket or missile. The cylindrical shape of the body would allow for a circumferential array of elements of fore and aft configuration. With excellent low angle pattern coverage the system could achieve near full hemispheric coverage. Such a system can provide direction finding (DF) and angle-of-arrival (AOA) input signals. For some broad side angles it also provides additional benefit in AOA and DF in that there are twice as many elements with opposing phase directions that have a view of the incoming signal. A single forward looking set may be implemented for a forward-only array for DF/AOA applications. A single forward looking set would simply have limited the total field of view compared with a forward and rear-looking embodiment.
The antenna elements may be electrically connected to a radio frequency receiver system or a radio frequency transmitting and receiving system which may be termed a transceiver. An RF receiver may process the electric current from the antennas via a low noise amplifier (LNA) and may then down convert the frequency of the waveform via a local oscillator and mixer and may process the resulting intermediate frequency waveform via an adaptive gain control amplifier circuit. The resulting conditioned waveform may be sampled via an analog-to-digital converter (ADC) with the discrete waveform being processed via a digital signal processing module. Where the frequency of the RF waveform is well within the sampling frequency of the conversion rate of the ADC, direct conversion may be employed and the discrete waveform may be processed at a rate comparable to the ADC rate. Receivers may further include signal processing and/or control logic via digital processing modules having a microprocessor, addressable memory, and machine executable instructions. An RF transmitter may process digital waveforms that have been converted to analog waveforms via a digital-to-analog converter (DAC) and may up-convert the analog waveform via an in-phase/quadrature (I/Q) modulator and/or step up the waveform frequency via a local oscillator and mixer, then amplify the up-converted waveform via a high-power amplifier (HPA) and conduct the amplified waveform as electric current to the antenna. Transmitters may further include signal processing and/or control logic via digital processing modules having a microprocessor, addressable memory, and machine executable instructions. Transceivers generally have the functionality of both a receiver and a transmitter, typically share a component or an analog or digital signal processing module, and employ signal processing and/or control logic via digital processing modules having a microprocessor, addressable memory, and machine executable instructions.
While cylindrical or round embodiments of an array of antenna elements or pairs of elements have been shown in the example of an air vehicle fuselage, these elements, of one or various scales, may be applied to oval, rectangular and multisided structures, such as hexagons and octagons. Antenna elements, of one or various scales, may also be embedded into surfaces of wings along an axis rather than or in addition to an array disposed circumferentially about the fuselage. Multiple elements can be separated by a wing or fuselage, exemplified by separation on the top and bottom of a wing or on the left and right wings, or on the vertical fins of an aircraft or missile.
Some antenna embodiments of the present invention may be used to send, receive or transceiver RF signals. Accordingly, an array of at least a pair of substantially frequency independent planar antenna array elements may function as a receiving array and may alternatively function as a transmitting array or a transmitting and receiving, that is, the array may function as a transceiver array.
Scaled Embodiments
Because of the feed structure, the bandwidth capabilities are extremely broad. A scaled version of the prototype antenna was created at one-seventh ( 1/7) of the original size. Properties of an exemplary antenna scaled from the example antenna of Table 1 are provided in Table 2 with distances in inches for dipole teeth numbered 1-9:
Dielectric thickness was also partially scaled down from the antenna element characterized in Table 1, but, due to material limitations, was not fully scaled down. The one-seventh scaled antenna element characterized by Table 2 has only one-quarter (�), rather than a one-seventh, of the dielectric thickness of the antenna element characterized in Table 1. So, if RT5880 DUROID� is used as a substrate, the scaled thickness of the antenna element characterized in Table 2 is approximately 4 mils. Overall, the scaling resulted in the antenna element characterized in part by Table 2 operating at seven times the frequency of the antenna characterized in part by Table 1, and the scaled antenna element was tested to the frequency limit of the network analyzers supporting the test conditions. The feed structure continued to operate to the analyzer upper limit which is more than double the frequency of the full scale element example of Table 1. Being readily scalable, the various scaled embodiments of the exemplary antenna may be applied to a variety of structures due in part to their functioning at the various scaled sizes.
In telecommunication applications, the extreme bandwidth and opposing phase travel of pairs of elements support systems such as cellular base stations or point-to-point communication systems. Typical cellular system frequencies range from 800 MHz to 2 GHz in the United States, or as high as 3.4 GHz abroad. This extreme bandwidth provides a diversity antenna system to allow switching to the strongest signal and yet provide attenuation to other towers limiting tower interference and reducing tower traffic. From a mobile unit side, an antenna element, pair of elements, or array of elements or array of elements pairs may be conformally mounted into the top surface of a vehicle such as a car or truck. One antenna could allow for coverage of all cellular systems in a single element. From the tower side, an annular or circular-shaped array may provide DF/AOA tracking of subscribers for system traffic control or to enhance E911 capabilities of the overall system. Exemplary telecommunication embodiments may exhibit particular applicability when considering phones or communication appliances that do not include a GPS tracking capability or where the GPS quality is attenuated due to partial or complete satellite line-of-sight blockage.
The configuration of the exemplary embodiments of the antenna element structure allows for adaptation to a variety of media and/or materials. For example, materials for manufacture may range from low cost commercial dielectrics to materials known to endure extreme temperature condition for any and all applications. Low cost commercial materials such as foams or plastics of proper thicknesses, i.e., thickness sufficient to provide the electric separation of portions and the electromagnetic interaction of the portions as provided by the exemplary dielectric of 15 mil and 4 mil thicknesses, may allow for very inexpensive embodiments to be mass produced for commercial hand sets or automotive applications. Midrange materials, such as Rogers 4003, may be used for higher performance, low cost, applications which require little conformity. More flexible materials such as polytetrafluoroethylene (PTFE) circuit materials can be used for high performance mid to high temperature applications such as high speed aircraft which may also require contour matching of the air vehicle skin. Extreme conditions, such as space vehicles or very high speed air vehicles, can take advantage of layered ceramic materials and ceramet or palladium silver, as examples of fired metalized coatings, which can withstand temperatures in excess of 750 degrees Fahrenheit.
Many alterations and modifications may be made by those having ordinary skill in the art without departing from the spirit and scope of the invention. Therefore, it must be understood that the illustrated embodiments have been set forth only for the purposes of example and that it should not be taken as limiting the invention as defined by the following claims.
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Internet stalking Toronto
What blogs/twitter lists should I read to get a sense of the Toronto/GTA zeitgeist? [more inside]
West-end Toronto libations?
Toronto: Good place for cocktails on or around Queen West West / Parkdale? Anyone know a good place for a decent martini and/or gimlet in the west end of downtown TO? Open tonight and no insanely loud music.
So many options!
What is your favourite thing to do at or near Kensington Market in Toronto? [more inside]
Where can I find a good linen suit in Toronto?
Where can I get a nice, good-quality linen suit in Toronto, preferably downtown? I'm looking for someplace I can buy off the rack that has a decent selection. Any leads would be much-appreciated.
Buying swimsuits in a country where they're useless for 10 months.
Canadian-stores-suck filter: Looking for a cute and yet athletic tankini-style swimsuit. Problem? I'm super picky and I need to try it on. [more inside]
Filming on mass transit in Toronto, Canada. Legal?
Filming on mass transit in Toronto, Canada. Legal? ... A friend of a friend of mine was on a Toronto streetcar when a fellow passenger complained about the delay to the driver. The driver threw a fit and decided the passenger had to leave or she wouldn't drive on. The passenger refused. The driver called an inspector. The inspector sided with the driver (of course). My friend captured this on her cell phone video. When the inspector sees the camera (which was in clear view the entire time) he walks over and smashes the camera out of her hand (he didn't ask her to turn it off first). My friend wants to post the video but is unaware if filming on the transit system in the city is illegal as faces are clearly visible. I saw the video and was shocked and want it spread wide. Legally, what's the situation? [more inside]
Toronto place to read/write
A Toronto version of this question: NYC Place to Write. [more inside]
Kilns in Toronto?
Where in Toronto can I harness the power of a kiln to slump a bottle? [more inside]
What are the pros and cons of trying to become an English professor in Toronto for a fiction writer (and how feasible is it)?
What are the pros and cons of trying to become an English professor in Toronto for a fiction writer (and how feasible is it)? [more inside]
Where can I get Monocle Magazine in downtown Toronto?
There's an article that I want to read in the latest Monocle magazine. Where can I get it in Toronto? I haven't been able to find it in several local newsstands.
Movers needed in TO
Moving from Toronto to Kingston, ON. Does anyone have recommendations for movers? [more inside]
I don't want to lose our cat, but we're going to be away for a half year..
How can I make sure my cat is taken care of for six months while I am away? Do I need to give him up? [more inside]
Where can I learn Polish in Toronto?
Where I can learn conversational Polish in Toronto? [more inside]
I would like to ride my bike without dying.
Do you have any advice for someone new to urban cycling? [more inside]
Best of the Queb...ec and Ontario city events
What should I hit in Montreal and Toronto? I have two weeks available and I want to bend them around unmissable events in each city. Aug/Sept. [more inside]
Canadian Employment...
How do people in Montreal and Toronto find work? [more inside]
Full-colour business cards in Toronto?
Can anyone recommend a good place for full-colour business cards in Toronto? Ideally, I'd prefer some place that can work with a Photoshop .PSD file, but I can provide JPEG if necessary. Thanks!
Future midwife needs help moving from Edmonton to Toronto!
I was recently accepted to Ryerson's midwifery education program, a lifelong dream of mine. However, now my partner and I are faced with planning a long distance move and feeling a little overwhelmed. Details inside. [more inside]
What should I see between Chicago and Toronto?
I'm going on a road trip next weekend from Chicago to Toronto. What cool things should see on the way there/back?
Am I at the most expensive dance studio in town?
Taking my dance classes to the next level...am I at the most expensive dance studio in town? [more inside]
Seeking: temporary satellite office
Please suggest extended stay accommodations in Toronto. [more inside]
Toronto International Film Festival Pro-Tips Please!
Please tell me your pro-tips for attending the Toronto International Film Festival! [more inside]
Where do I live in Toronto?
Where should I live in Toronto, Ontario, and how should I go about looking for a place? [more inside]
Where was this abortion clinic in Toronto?
Dr. Leslie Smoling operated an illegal abortion clinic in Toronto from 1962 to June 10, 1968, when police closed the clinic and charged him. He then fled to Australia to evade prosecution, coming back after two decades (?) to face charges. Where in the city was this clinic? [more inside]
Where can I move that is near Toronto, but cheaper and better to live?
I'm not sure I want to live in Toronto anymore, but I want to stay *near* Toronto. Where can I go? [more inside]
Help me buy a unique frame (or ten) online...
Are there any good resources online to buy unique picture frames online? Where else can one find good frames for 4x6 photos (or slightly bigger) for a large travel collage. I don't want to use the same frame more than once, and I'm happy to buy from several different stores. [more inside]
Any advice for finding this missing suicidal person?
Any advice for finding this missing suicidal person? [more inside]
Where/How to get an Abortion in Toronto?
Where can I get an abortion in Toronto? [more inside]
Carbon Monoxide False Alarm
My carbon monoxide alarm went off this morning, so I called 911, and the fire department came to test the air. It was a false alarm - just an old detector acting up. Will I be charged? I live in Toronto, ON. [more inside]
[Toronto Filter] Looking for a downtown restaurant with a private dining room or lounge for 20 people. Any ideas?
[Toronto Filter] Looking for a downtown restaurant with a private dining room or lounge for 20 people. Any ideas? [more inside]
Where to buy crafting supplies in Toronto, specificallly embroidery?
Where to get embroidery supplies in downtown Toronto? [more inside]
How can I get a question answered without schlepping down to city hall?
Can I get questions about Toronto's fire code (pertaining to residential renovations) answered without driving down to city hall? I would ideally like this info for free, of course. [more inside]
Whither my perfect jeans?
Where should a short skinny guy buy jeans in Toronto? [more inside]
Buttoned down in Toronto
Where can I make a handful of custom buttons to give as party favors, in downtown Toronto? Most print shops want to sell me hundreds; I need 5-10.
Oh woe is me no mobile me :(
I didn't activate mobileme. My iphone was stolen from my bag in a yoga studio change room a few hours ago. Called Rogers to freeze service, called apple, and called police to file report. No one seems to be willing to do anything to track it down. Is there ANY way I can track its whereabouts?
Gin, please.
Where can I find the best gin and tonic in downtown Toronto? [more inside]
Looking for a House of non-Worship
I would like to belong to a church. Except, you know, without all that annoying God stuff. Where do I find one? [more inside]
Letters to the Departed
(Canadian Detectives!) What is at PO Box 4585 Stn "A" Toronto ON M5W 4W7? [more inside]
need professional help with tax debt in Toronto
I'm looking for professional help with settling an old tax debt. I would like to know what kind of professional I should be looking for and recommendations for an individual or firm in Toronto would be most helpful. [more inside]
Help me help someone get their sculptures exhibited in Toronto.
How does an established professional but not well known artist best go about 'exhibiting' a collection of beautiful metal sculptures in Toronto? Would they have to rent their own space and throw an event? Do they pitch/apply to various galleries? Which ones? Asking for a friend! Thanks in advance...I love the green.
Lady Tux Fashion
Snappy but reasonably priced women's tux in Toronto? [more inside]
OpenSourceMusicGeekProjectFilter question
I need some advice on how to build a database-driven site around an archive of ephemera (mostly flyers). Essentially, I want to build an online archive of scanned rave flyers from the Toronto-London-Detroit rave scenes (plus some Midwest US flyers). Here's what I have: [more inside]
Help us plan our vacation in Mexico
Help us plan our vacation in Mexico [more inside]
Where can I buy emulsifying wax in Toronto?
My wife wants to make her own moisturizer, and we're wondering if there are there any retail stores in Toronto where one can buy emulsifying wax?
Getting boots resoled in Toronto
Where does one get one's shoes resoled in Toronto's west end? [more inside]
I guess I shouldn't be surprised that adultcatadoption.ca is unregistered.
How can I find a new home for an adult cat in Toronto? [more inside]
Affordable sunshine for single Toronto gal? Bonus points for dodging single supplements and interesting locales. [more inside]


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Team Sauerland have laughed off complaints from an American promoter who has criticised the selection of Taurus Sykes as Alexander Povetkin´s latest opponent. Lou DiBella called last Saturday´s fight, which Pokvetin won by KO in the fourth round, a disgrace to boxing. DiBella insisted a meeting with his fighter Israel Garcia would have promised far more excitement but fell through due to monetary reasons..
Those claims are absolutely ridiculous, Sauerland managing director Chris Meyer said. First of all, you have to give Alexander Povetkin credit for stepping into the ring even though he had already secured the right to fight Wladimir Klitschko. He had little to win but a lot to lose. Yet he accepted the challenge.
We picked the best opponent available for this fight, and we are not at all interested in Israel Garcia. Why should we he lost to Sykes a couple of years ago.
We are pleased that Povetkin continued his path to glory with another KO victory and we are very much looking forward to the fight against Klitschko.
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The State of Small Biz in 2014? The Sky's the Limit. Sort of
10 Trends for 2015 You'd Better Pay Attention To
3 Opening Remarks to Use on Your Next Sales Call
13 Personality Traits That Can Keep You From Success
What makes Inc. 500 CEOs tick? We asked the entrepreneurs on this year's list how they run their companies (really well) and manage their private lives (not so much). We also asked them for their thoughts on the economy, the government, leadership, and raising money. It turns out that besides launching the fastest-growing companies in America, the CEOs of the Inc. 500 have a lot in common. Click for more
2012 CEO Survey


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Hi, Thank you for replying...Minnie Molbley that I am looking for was my G-grandmother's daughter, Minnie's maiden name was MOBLEY and she married William COLWELL.
So I don't think your Minnie MOBLEY is the same.
My g-grandmother Lorinda (Lane) ERWIN married David A. Mobley after my g-grandfather died.
My g-grandmother Lorinda was a LANE, her father was Wyat LANE and she married my g-grandfather Charles Fred ERWIN they had a daughter Josie Hattie ERWIN who also married into the Mobley family, Jim MOBLEY...
What MOBLEYS are you researching ?
Thank you, Hope to hear from you, Nelda
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Flu season will be over for you when you start taking
5,000 to 10,1000 IU daily of Vitamin D3 from September thru May (when you don't get enough sun) along with Vitamin K2.
You either won't get flu or if you do, it will be minimal since your immune system will work well.
"Bend over and grab your ankles" should be etched in stone at the entrance to every government building and every government office.
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Planned Parenthood Condemns DC Abortion Ban and Harris Amendment
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Applauds Alternate Amendment by Reps. Barbara Lee and Mike Quigley
WASHINGTON, DC -- As the nation's leading sexual and reproductive health care provider and advocate, Planned Parenthood condemned a measure that would bar the District of Columbia from using its own funds to give low-income women access to abortion and an amendment by Rep. Andy Harris (R-MD) banning all multi-state plans under the Affordable Care Act (ACA) from providing coverage for abortion except in cases of rape, incest, or life endangerment.
Federal law already prohibits federal funds from being used for abortion, except in the instances of rape, incest, or when the woman's life is threatened – a restriction Planned Parenthood strongly opposes. Additionally, by law, at least one multi-state plan offered in each state Marketplace must not cover abortion beyond life-endangerment, rape, and incest. The Harris amendment to the Financial Services and General Government Appropriations bill goes even further to restrict abortion coverage in all multi-state plans under the ACA and is nothing more than an attempt to interfere with a woman's ability to make a personal decision.
Statement from Cecile Richards, President, Planned Parenthood Federation of America:
"The DC abortion ban and the Harris amendment are outrageous examples of politicians interfering in a woman's deeply personal medical decisions that should be between her and her doctor.
"Politics should never get in the way of women's access to health care. That's why we applaud Congresswoman Lee and Congressman Quigley's amendment to the spending bill. The District of Columbia should be able to use its own local funds to pay for medically necessary abortion services for women struggling to make ends meet, just as all 50 states are allowed the same option.
"Planned Parenthood knows firsthand the challenges that women face in accessing affordable health care including safe and legal abortion, and we will continue to fight politicians' interference with a women's access to comprehensive coverage of reproductive health services."
Planned Parenthood is the nation's leading provider and advocate of high-quality, affordable health care for women, men, and young people, as well as the nation's largest provider of sex education. With more than 700 health centers across the country, Planned Parenthood organizations serve all patients with care and compassion, with respect and without judgment. Through health centers, programs in schools and communities, and online resources, Planned Parenthood is a trusted source of reliable health information that allows people to make informed health decisions. We do all this because we care passionately about helping people lead healthier lives.News Source : Planned Parenthood Condemns DC Abortion Ban and Harris Amendment
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- Supreme Court Denies Review of Arizona Abortion Restrictions, Politically Motivated Law Remains Blocked by Court Order
- New Study Reaffirms Abortion Is Safe, PPFA Urges Policy Makers to Base Legislation on Science
- Birth Control One of the Most Disruptive Ideas in Business, says Bloomberg Businessweek
- On World AIDS Day, Planned Parenthood Calls on Congress to Support Greater Investments in Public Health Programs to achieve an AIDS-Free Generation
- Planned Parenthood Federation of America and Affiliates Gear Up For ACA Open Enrollment
- In the Lame Duck Session, Opportunities for Women's Health
- Oklahoma Supreme Court Protects Access to Safe, Legal Abortion
- Gabrielle Union, Doug E. Fresh, Hundreds Attend Planned Parenthood and BET Networks Breast Party Ever in Miami
- Groups Deliver 88K Comments to HHS in Support of Birth Control; Response to Deeply Unpopular Hobby Lobby Ruling
- Planned Parenthood's Get Real Program Works; It changes sexual behavior among middle school students.
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Newsletter: Carleton Sentinel
"Keeping you in the loop since 2005"
Collaborative Research Experiences for Undergraduates (CREU)April 14, 2014
CRA's Committee on the Status of Women in Computing Research (CRA-W) and the Coalition to Diversity Computing (CDC), the CREU program is aimed toward increasing the number of women and underrepresented minorities who go on to CS&E graduate programs. The CREU program includes not only computer science and computer engineering research, but also collaborative, multidisciplinary research with a significant computer science emphasis. Application deadline is May 19, 2014. Click here for more information.
Job OpportunityMarch 27, 2014
Mathematica in Ann Arbor, MI, is looking for entry level research programmers. They are reviewing applications currently if you're interested in applying. Click here for more information.
Congratulations to Ken SchillerMarch 27, 2014
"Kudos" to Ken Schiller for being selected as a 2014 KPCB Engineering Fellow. He is featured on their website here. The KPCB Fellows Program offers outstanding students from across the country an opportunity to gain significant experience working on uniquely challenging technical, design and product problems while also developing new relationships that are meaningful to their careers. Congrats Ken!
SFS ScholarshipMarch 27, 2014
NYU Polytechnic School of Engineering, an NSA designated Center of Excellence in Information Assurance Education, is currently offering the NSF Federal Cyber Service: Scholarship for Service (SFS) to students who wish to pursue an education in cyber security. This scholarship is available for undergraduate as well as graduate (both MS and PhD) students. Applicants must be US citizens. Click here for more information.
Thumbtack Tech TalkMarch 27, 2014
Thumbtack will be giving a Tech Talk on Thursday, April 24 in CMC 209 from 6-7 p.m. Food will be provided.
Job OpportunityMarch 27, 2014
Carleton alum Beth Ashworth is now working in the IT subfield of Quality Assurance, and recently contacted us. She explained to us that "if you ever have students looking for an entry level IT job who are both techy and good at communicating/writing, but aren't necessarily interested in programming/developer jobs, QA is a good field to go into." She indicated that her consulting company (www.olenick.com) has a training program for newly graduated students, and she'd be happy to work with current students to help them get in. Contact her directly at email@example.com.
Summer Job OpportunityMarch 27, 2014
Genesys Works located in the Twin Cities Metro area is looking for Information Technology Trainers for the summer. Application closing date is March 28, 2014, and click here for more information.
REU OpportunityFebruary 25, 2014
REU opportunity at Temple University for the summer of 2014. This program is open to all sophomores, juniors, and seniors majoring in computing-related majors. Application deadline lis March 15. Click here for more details.
REU OpportunityFebruary 24, 2014
Summer REU Opportunity at University of Illinois Parallel Computing Institute. Application deadline is March 1, 2014. Click here for more information.
Hiring for Carleton Summer Computer Science InstituteFebruary 24, 2014
The Carleton Summer Computer Science Institute (SCSI) is a 3 week residential summer program for high school students who come to Carleton to learn about computer science. We'll be hiring 3 Carleton students who will support the high school students in their research, conduct discussion groups with participants, attend morning classes with the participants, and other duties. To apply, visit:
... and apply for the Computer Science Institute Research Assistant position.
The three faculty members involved are Dave Musicant, Amy Csizmar Dalal, and Susan Fox (who is a faculty member at Macalester). Any questions about the program can be directed to Dave, who is directing it.
Summer Internship OpportunityFebruary 24, 2014
White House Office of Science and Technology Policy is currently accepting application for its summer internship program. Application deadline is March 7. Students who are U.S. citizens and who will be actively enrolled during the 2014 academic year are welcome to apply. Contact Rebecca Grimm if you have questions. Click here for the application instructions.
Spring Term Course DescriptionsFebruary 24, 2014
Registration for spring term courses is coming up soon: it begins on Monday, February 24. Click above for descriptions of the computer science courses (above Intro to CS) that will be offered in the spring. In addition to your own advisor, remember that you can contact our Student Departmental Advisors Daniel Alabi and Carissa Knipe.


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Record numbers of students entered university this year, but the gender gap has never been wider, according to annual admission figures.
In this lesson, students use favorite family recipes to learn about history and culture.
"As a nation, we have to make college more accessible and affordable and ensure that all students graduate with an education of real value. Our students deserve to know, before they enroll, that the schools they've chosen will deliver this value.
Gavin Grimm just wants to be able to use the high school boys' room without being called a "freak."A 15-year-old sophomore at Gloucester High School in Virginia's Tidewater region, he was barred from using the boys' restrooms at school after the local School Board voted to limit boys' and girls' restrooms and locker rooms "to the corresponding biological genders," a policy that requires transgende
Ucas figures show overall admissions in 2014 were at a record 512,400, with 10% rise in candidates from poorer familiesThe number of students securing degree places at UK universities and colleges topped half a million for the first time in 2014, with 512,400 people gaining places and a rise of 10% in those from the poorest households.Universities are making record levels of offers to woul
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