text: Comments on: Berard Resigns http://hockeytraderumors.com/berard-resigns/ NHL - Hockey Trade Rumors, providing NHL Hockey Trade Rumors since 1996 Wed, 26 Nov 2014 19:27:05 +0000 hourly 1 By: wingerxx http://hockeytraderumors.com/berard-resigns/comment-page-1/#comment-94784 Tue, 17 Aug 2004 20:03:31 +0000 http://localhost/wordpress24/?p=9020#comment-94784 Hey I understand…Hossa didn't mean to put him out of hockey for so long though…and yeah, maybe he would still be a Leaf. If anything though, that incident made Berard a more dedicated player than he was before. I think that it makes up for whatever vision problems he has. Who knows…he has a lot of years left in him. Maybe he'll wear the blue and white again someday. ]]> By: chevykurt http://hockeytraderumors.com/berard-resigns/comment-page-1/#comment-94783 Tue, 17 Aug 2004 18:00:54 +0000 http://localhost/wordpress24/?p=9020#comment-94783 You want to talk about angry, wingerxx? How about when that low life, reckless s***** Marian Hossa high sticked Berard a few years back? Not only would he still have his perfect vision, but he may have still been in a Leafs uni as most fans loved him. ***** Hossa and ***** the Ottawa Senaturds! ]]> By: wingerxx http://hockeytraderumors.com/berard-resigns/comment-page-1/#comment-94782 Tue, 17 Aug 2004 15:51:31 +0000 http://localhost/wordpress24/?p=9020#comment-94782 I think that Berard got what he wanted. It's good to see, because he is such an electric player. I'm still angry over the fact that my Rangers let him go after one mediocre season when he wasn't getting great power play time. I would take Berard over Tom Poti any day of the week. He was one of the only decent things about the Blackhawks season last year, and hopefully he'll stick around for a while. He's still young too. ]]> ructation


text:
ASICS Women's GEL-Nimbus 15 Running Shoe
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Save $45.00 (31%)
Product Information:
Leading the way in high-end cushioning, the GEL Nimbus™ 15 is perfect for under-moderate overpronators. An optimized upper includes FluidFit™ and discrete eyelets that allow the shoe to stretch and adapt to individual needs. FluidRide™, ASICS newest midsole technology, offers a combination of responsiveness and cushion, giving you another reason to love your long runs. A durable rubber outsole finishes off this fan-favorite.
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Country of Origin: ImportedWeb ID: 20821676
Customer Reviews:
ASICS Women's GEL-Nimbus 15 Running Shoe 54 54
comfortable so far so good! you can feel the added padding compared to other sneakers! the only issue i have is that it took 12 days to receive them! probably won't order from dick's online again! November 20, 2014
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great support always buy these shoes...running regularly and they are Comfortable and give good support November 19, 2014
Love this shoe! I have been wearing Asics for years, and these are, by far, my favorite style. I recently tried the Gel Cumulus (they were on sale), and I did not like them as much. The Gel Nimbus are much more comfortable and cushioned. I can run in them with no discomfort whatsoever. I will continue to buy them as they are the most comfortable shoes I have ever owned. November 18, 2014
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Asics always a great choice! This shoe is all I could have asked for in a runner! Comfortable, light weight and as reliable as I have always found an ASIC show to be. October 22, 2014
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Runs Half Size Short I love this shoe, however it does run about a half size too small. I typically wear a 9.5 and I had to order a 10. September 21, 2014

subset: commoncrawl


text:
Improving Your Smile with Six Month Smiles
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text:
Weekend Forecast
Sumner, IL 62466
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Mostly cloudy. Near steady temperature in the lower 50s. Southwest winds around 15 mph with gusts to around 25 mph.
Cloudy with a 30 percent chance of rain. Highs in the lower 60s. Southwest winds 15 to 20 mph.
Mostly cloudy. Chance of rain in the evening...then a chance of rain or freezing rain after midnight. Lows around 30. Northwest winds 10 to 15 mph. Chance of precipitation 40 percent.
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text:
Daytrip Metallic Thread Top
SALE $12.72 was $29.95 Item #21470TB4917B
Sorry, this product is currently not available on buckle.com.
- Banded hem top
- 96% Polyester, 4% Spandex.
- Hand wash cold. Hang or lay flat to dry. Do not iron.
- Made in United States.
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- Body length 27" on size medium.


text:
Methods, systems, and media to improve the manufacturability of cells and structures within cells of an integrated circuit are disclosed. Embodiments comprise a method of arranging programmable cells, routing the programmable cells, analyzing the cell arrangement and interconnect wiring for manufacturing improvement opportunities, and modifying the programmable cell structures to incorporate the manufacturing improvements. In some embodiments, wires are spread to prevent shorting. In other embodiments, the reliability of contacts and vias is improved by adding additional metallization to the areas surrounding the contacts and vias, or by adding redundant contacts and vias. In one embodiment, a series of manufacturing improvements are made to integrated circuit cells in an iterative fashion.
1. A system for improving manufacturability of an integrated circuit on a semiconductor substrate using an unmodified plurality of cells, the system comprising:
an arrangement module to arrange the unmodified plurality of cells;
a router to define routes of interconnecting conductive paths between the unmodified plurality of cells based on operation of the integrated circuit;
an evaluation module to evaluate the arrangement of the unmodified plurality of cells and the routes of the interconnecting conductive paths between the unmodified plurality of cells for a manufacturing improvement opportunity; and
a modification module to modify an element of at least one of the unmodified plurality of cells based on the manufacturing improvement opportunity to create a modified plurality of cells, wherein the modified plurality of cells are to be used to create the integrated circuit on the semiconductor substrate, wherein further the modification module is adapted to increase metal surface area on one or more metal layers to provide improved via contact with one or more of the modified plurality of cells.
2. The system of
3. The system of
4. The system of
5. The system of
6. The system of
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8. The system of
9. The system of
10. The system of
11. A machine-accessible medium comprising a storage media, wherein the storage media contains instructions, which when executed by a machine, cause the machine to perform operations for improving manufacturability of an integrated circuit on a semiconductor substrate using an unmodified plurality of cells, comprising:
arranging the unmodified plurality of cells;
defining routes of interconnecting conductive paths between the unmodified plurality of cells based on operation of the integrated circuit;
evaluating the arrangement of the unmodified plurality of cells and the routes of the interconnecting conductive paths between the unmodified plurality of cells for a manufacturing improvement opportunity; and
modifying at least one of the unmodified plurality of cells based on the manufacturing improvement opportunity to create a modified plurality of cells, wherein the modified plurality of cells are to be used to create the integrated circuit on the semiconductor substrate, wherein further modifying at least one of the unmodified plurality of cells comprises increasing metal surface area on one or more metal layers to provide improved via contact with one or more of the modified plurality of cells.
12. The machine-accessible medium of
13. The machine-accessible medium of
14. The machine-accessible medium of
15. The machine-accessible medium of
16. The machine-accessible medium of
17. The machine-accessible medium of
18. The machine-accessible medium of
19. The machine-accessible medium of
20. The machine-accessible medium of
Pursuant to 35 USC �120, this continuation application claims priority to and benefit of U.S. Utility patent application Ser. No. 11/265,641, filed Nov. 2, 2005 now U.S. Pat. No. 7,343,570, on behalf of inventors Benjamin J. Bowers and Anthony Correale Jr., entitled �Methods, Systems, and Media to Improve Manufacturability of Semiconductor Devices.�
The present invention generally relates to the field of integrated circuits. More particularly, the present invention relates to methods, systems, and media to interconnect cells and structures within cells formed in a substrate of an integrated circuit to improve manufacturability and reliability.
Today, integrated circuits contain millions of transistors on a single chip, with many critical circuit features having measurements in the deep sub-micron range. As manufacturers implemented more and more circuit elements in smaller and smaller silicon substrate surface areas, engineers and designers developed hardware and software tools to automate much of the integrated circuit design and manufacturing process. While these software and hardware tools have drastically reduced the time from conception to production, these same tools currently have manufacturing limitations. One such limitation is reliability of the integrated circuits, both during manufacturing and testing-stages, and in the final product chips. As they are currently being used, these tools also interfere with increasing circuit component densities.
While there are several approaches to developing integrated circuits, a primary method today uses standard cells in the development process. This standard cell method, also referred to as cell-based topology has the advantage of achieving greater circuit densities than other methods, such as a gate array method. Like the gate array method, standard cell designs rely on a set of predefined circuit elements, called cells, to implement the circuit design. The complexity of standard cells can range from simple logic gates, such as those found in gate arrays, to block-level components such as RAMs, ROMs, and PLAs. In other words, the cell-based topology may comprise low-level cells, such: as n-fet and p-fet transistors, or it may comprise complex function blocks, designed either from scratch or by combining lower-level cells.
Designers and engineers commonly design and fabricate semiconductor integrated circuits by first preparing a schematic diagram or hardware description language (HDL) specification of a logical circuit. The HDL specification provides the details for how the circuit elements are interconnected. With standard cell technology, the schematic diagram or HDL specification is synthesized into standard cells of a specific cell library. Each standard cell corresponds to a logical function that is implemented using transistors.
Using the HDL specification and standard cells from a cell library, the particular interconnections of the circuit elements of an integrated circuit design are typically expressed as a list of network elements, a.k.a. a net list. A series of computer-aided design tools generate this net list of standard cells and the interconnections between the cells. A floor planner or placement tool uses the net list to place the standard cells at specific locations in an integrated circuit layout pattern. After generating this layout pattern, software tools, called routers, determine the physical locations of conducting paths between the cells. A number of algorithms have been developed and implemented to facilitate the automatic routing of interconnections among the circuit elements of cell-based circuit designs. These algorithms comprise the heart of the router software tools. Along with other parameters, these router algorithms use the net list parameters and attempt to automatically route the interconnections among the circuit elements of the standard cells, including the function block cells.
Most routing tools used for cell-based designs begin with the placement of circuit elements, such as standard cells and function blocks. The placement of circuit elements can be automatic, as in the case of a floor planner mentioned above, or placement can be manual. Placement of circuit elements is driven by a number of parameters, such as orientation requirements, cell placement needs relative to other dependent cells, circuit compaction requirements, and the number of interconnect lines between cells.
After placement, a typical next step for routing is commonly referred to as global routing. The global router attempts to logically determine general paths, or channels, for groups of interconnections. The global router considers many factors in determining the channels, such as available avenues for the interconnections and lengths of the interconnections. Once the global router has assigned the general flow of interconnect lines, designers use a detailed router, such as a channel router, to make the actual interconnect lines fit the assignments made by the global router. In other words, once the global assignments have been made, it becomes the job of the channel router to figure out how to route all of the lines through each channel as assigned by the global router. In simplistic terms, the channel router chooses a target from one cell and determines a particular physical path to a target on a second cell. The router repeats this process for all the defined interconnections.
To facilitate efficient routing, standard cells often have numerous cell targets for the router. Having numerous targets on the standard cells allows the router more flexibility in choosing an interconnect line destination. Put another way, the router may choose from a variety of targets to shorten interconnect lines, conform to standard cell requirements, or comply with channel restrictions. In routing the actual interconnect lines, the channel router may need to relocate the previously placed cells to implement the design. By way of example, the number of interconnect lines that must run in a certain channel may physically exceed the allotted channel width, requiring that cells be moved to increase the channel width and accommodate the interconnect lines.
Once the standard cells have been placed and routed, the net list, the cell layout definitions, the placement data, and the routing data together form an integrated circuit layout definition that is used to fabricate the integrated circuit. The integrated circuit is fabricated by depositing multiple layers on a substrate known as a wafer. The lowest �base� layers include the active areas of the transistors, including the diffusion regions, the gate oxide areas, and the desired patterns of the polycrystalline silicon gate electrodes, often referred to as polysilicon gate electrodes.
The integrated circuit layers are fabricated through a sequence of pattern definition steps that are mixed with other process steps such as oxidation, etching, doping, and material deposition. One or more metal layers are then deposited on top of the base layers to form conductive segments that interconnect the standard cells. Formation of the metallization layers over the substrate facilitates interconnection of the transistors to form more complex devices such as NAND gates, inverters, and the like. Current integrated circuits typically have six to ten metallization layers.
The metallization layers utilize lines, contacts, and vias to interconnect the transistors in each of the cells as well as to interconnects the cells to form the integrated circuit such as a processor, state machine, or memory. Lines typically reside in parallel paths within each layer. Lines in vertically adjacent layers often run perpendicular to, one another, separated by a non-conductive passivation layer also referred to as an inter-level dielectric layer such as, e.g., silicon oxide. The silicon oxide is etched to form the vias, which interconnect the lines of various metallization layers in accordance with the circuit design. Inputs and outputs of the integrated circuit are brought to a surface with contacts and vias to bond the circuits with pins of a chip package. The chip package typically includes an epoxy or ceramic that encloses the integrated circuit to protect the circuit from damage and pins to facilitate a connection between the inputs and outputs of the integrated circuit and, e.g., a printed circuit board.
Using the aforementioned manufacturing process, integrated circuits have been scaled down to increase both functionality and speed available in chip packages. Designers have continually scaled down cell structures to smaller and smaller dimensions, increasing the density of cells per unit area of the substrate. Unfortunately, as cell structures and interconnect lines have shrunk, this miniaturization has brought certain manufacturing challenges.
Engineers and designers have encountered numerous manufacturing problems during the integrated circuit miniaturization process. As an example of one, manufacturing problem, the interconnect lines, or wires, are sometimes placed so close that they tend to short together when created. Aside from the manufacturing problems associated with shorting wires, improperly etched via holes sometimes prevent the via from fully contacting the top and bottom metal layers. Additionally, corner rounding of polysilicon or active diffusion during the manufacturing process alters the effective dimensions of cell components, such as transistors. Because of problems such as these, design for manufacturability (DFM) techniques, such as those techniques that solve the problems of shorted wires or improperly etched via holes, have become increasingly important.
Unfortunately, DFM techniques at the cell level are not sufficient, as they only improve features internal to the cell. Improving cell external features, namely those features that may interact with other cells or the top level interconnect, must occur once the cell has been placed, or is in-situ. Because of the great number of ways the cells may be situated, it is infeasible to design an exhaustive set of layouts for each cell situation.
Instead of using DFM techniques at the cell level, designers alternatively turn to software approaches. Using software, some designers alter the top level and add additional shapes to it. However, using software to add shapes in this manner has many disadvantages. First, adding shapes to the top level significantly increases the complexity of the design. Second, designers have little control over the design, other than changing such things as the Boolean operations. Lastly, using software in this manner generally only adds shapes and complicates the design, instead of taking them away and simplifying it.
Hierarchical methods that reduce the complexity of the top level, such as reducing the number of routing target connections, have been proposed. However, such methods have limited effectiveness in reducing cell and top level complexity, due to the different situations in which a cell may be placed. For example, consider a cell that may have three DFM improvements made. Suppose further that the cell may be used in two different situations, or instances. The only DFM improvements that may be made are those that are common to both cell situations. Often, this will only allow one DFM improvement, of the three potential improvements, to be made to both cell instances.
What is needed is a new method for increasing the manufacturing reliability, or new DFM techniques, of integrated circuits at the base cell level. New DFM techniques, such as those for preventing the shorting of wires and improving vias and contacts, are needed. Additionally, these new DFM techniques should facilitate further miniaturization of integrated circuits.
The problems identified above are in large part addressed by methods, systems, and media to improve manufacturability of semiconductor devices. One embodiment comprises a method to improve the manufacturability of an integrated circuit using modified cells. The method generally involves arranging unmodified cells, defining routes of conductive paths between the cells, evaluating arrangement of cells for manufacturing improvement opportunities, and modifying the cells to incorporate the manufacturing improvement changes on individual cell instances.
Another embodiment comprises a system for improving manufacturability of integrated circuits on semiconductor substrates by modifying the cells. The system may comprise an arrangement module for placing and arranging a set of unmodified cells and a router for specifying wire routes between the cells. The system may comprise an evaluation module, which examines the cell arrangement for manufacturing improvement opportunities. The system may further comprise a modification module that modifies the cells to incorporate the manufacturing improvement changes. The system may also include modules for evaluating such characteristics as the timing performance of the integrated circuit.
A further embodiment comprises a machine-accessible medium containing instructions for a machine to improve manufacturability of integrated circuit designs. The machine-accessible medium may comprise instructions for arranging a number of integrated circuit cells, defining a routes of interconnecting conductive paths between the cells, evaluating the integrated circuit cell arrangement for manufacturability improvements, and modifying the cells to incorporate the manufacturing changes.
Other objects and advantages of the invention will become apparent upon reading the following detailed description and upon reference to the accompanying drawings in which, like references may indicate similar elements:
The following is a detailed description of example embodiments of the invention depicted in the accompanying drawings. The example embodiments are in such detail as to clearly communicate the invention. However, the amount of detail offered is not intended to limit the anticipated variations of embodiments; but, on the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the present invention as defined by the appended claims. The detailed descriptions below are designed to make such embodiments obvious to a person of ordinary skill in the art.
Generally speaking, methods, systems, and media for new DFM techniques that improve manufacturability of semiconductor devices are disclosed. New DFM techniques for enhancing the manufacturability and reliability of cells and structures within cells formed in a semiconductor substrate of an integrated circuit are discussed. Embodiments comprise a base cell, with alternate wiring targets available to placement and routing tools, and a programmable DFM overlay template that combine to form a in-situ programmable cell. In some embodiments, software or a designer removes unused redundant input and output connections to reduce capacitance and critical area. In other embodiments, software or hardware moves wires internal to the cell in order to separate them and reduce the likelihood of metal bridging. In further embodiments, additional metal is added for increased coverage of contacts.
In alternative embodiments, original base cells are placed with all routing targets enabled on an overlay cell. An analyze step is performed and the overlay cell is partially modified, removing an unused input or output. Upon the partial modification of the overlay cell, one of two different algorithms may be executed. In one instance, a redundant via algorithm may then be run to analyze for opportunities to increase contact metal coverage. In this instance, when the redundant via algorithm is run after the partial modification of the overlay cell, a second algorithm, such as an algorithm to analyze for opportunities to implement redundant vias, may be run. In an alternative instance, the redundant via algorithm may be executed before the algorithm for increasing metal coverage.
While portions of the following detailed discussion describe many embodiments comprising new DFM techniques for improving the reliability of integrated circuits, upon review of the teachings herein, a person of ordinary skill in the art will recognize that the following invention may be practiced in a variety of ways, such as by a designer, by using software algorithms, and in some embodiments using integrated circuit design hardware. All methods of practicing the invention are interchangeable. Further, embodiments discuss polycrystalline silicon gate structures, silicon substrates, metal lines, and the like, but one of ordinary skill in the art will recognize that other materials may substituted for these structures when employed in accordance with similar constraints to perform substantially equivalent functions.
Turning to the drawings,
The standard cell may have multiple components, all of which may not be necessary in the final design. For example, the standard cell may comprise a base cell with numerous upper-layer wiring targets (element 110). These multiple, wiring targets may provide placement and router tools a variety of alternative landing points for connections with other cells. To this standard cell, a designer may add a DFM programmable overlay template 120. The combination of the standard cell (element 110) and the DFM programmable overlay template 120 comprises an in-place or in-situ programmable cell 130. The in-situ programmable cell 130 may then be used during the integrated circuit design process. Once placed in the design and routed, the in-situ programmable cell 130 may then be modified, removing any unnecessary components and thereby allowing other DFM enhancements.
For the sake of clarity, an additional illustration may help one understand the concept of an in-situ programmable cell. In
Once multiple in-situ programmable cells have been placed in an integrated circuit design file, a program may then analyze each arrangement for each in-situ programmable cell. Based on the particular arrangement, the program may enable or disable one or more of the phantom cell parameters. For example, one in-situ programmable cell arrangement may have five discrete structures, only three of which are needed to interconnect the cell to other adjacent cells. The program may enable the parameters for the three necessary structures and disable the parameters for the two unnecessary structures. As for the unnecessary structures, the program may remove them from the design file altogether, resulting in a smaller design file with the design having improved critical area and other DFM attributes.
Designers may use the base cell 210 and phantom cell 220 combination in a variety of ways to create the in-situ programmable cell 230. For example, designers may create the base cell 210 inside the phantom cell 220, with the phantom cell 220 being placed in the design. Alternatively, designers may place the base cell 210 and the phantom cell 220 within the same level in the integrated circuit. Obviously, the new DFM techniques disclosed by using the in-situ programmable cell 230 in this embodiment may be practiced in a variety of ways.
To further illustrate the concept of using an in-situ programmable cell for new DFM techniques, we turn now to
Cell 300 employs four basic materials: diffusion material, polysilicon, contact material, and metal. At a lower level, cell 300 has a diffusion material 375 connected to a metal rail 320, which resides at an upper level, by way of a contact 315 and a contact 385. The metal rail 320 may carry an active potential, such as VDD, to cell 300. Conversely, cell 300 may also contain another metal rail 350, carrying an active potential, such as ground. The contact 315 and contact 385 comprise conductive contact materials sandwiched between the diffusion material 375 below and the metal rail 320 above. Similar to the contact 315 and contact 385, a contact 335 resides between a polysilicon material 310 and a metal strip 340. In addition to the contact 315, contact 385, and contact 335, cell 300 employs numerous other contacts, providing conductive paths between upper level and lower level materials.
Cell 300 has numerous routing targets. Once cell 300 is placed: in an integrated circuit design, a software routing tool may choose either routing target 305, routing target 355, routing target 345, or routing target 380 when interconnecting the polysilicon material 310 with external cells. Additionally, the software routing tool may choose between routing target 330 and routing target 360 when interconnecting external cells to the cell 300 diffusion material 365 and the diffusion material 375. After placement and routing are both complete, one or more targets (elements 305, 355, 345, 380, 330, and 360) may remain unconnected. Such unconnected target elements may be removed from the final design and cell 300 altered for DFM improvements. Following is a more detailed discussion on how various new DFM techniques may be implemented.
Similar to the concept discussed for
In further embodiments, base cell 400 may contain different combinations of elements, such as just diffusion elements, or various combinations of diffusion elements, polysilicon, metal, contacts, and vias. Some embodiments may contain one or more of the polysilicon, metal, or contact material elements. Likewise, the phantom cell 450 may contain fewer polysilicon, metal, and contact materials. A factor for determining which elements are placed in the phantom cell 450, versus included in base cell 400, may be whether the elements are likely to be modified after placement and routing. In even further embodiments, all elements may be placed in the phantom cell 450. The elements placed in the phantom cell 450: may all have parameters, such as enable, disable, width, or length, assigned to them. The final parameters for the phantom cell 450 elements may be chosen after some step during the manufacturing process, such as after placement and routing.
Continuing now with our example of how a cell may be modified for DFM improvements after placement and routing, we focus our attention to
Routing targets and their associated materials not chosen during routing may be removed and the remaining cell elements altered, making way for DFM improvements. In
Removing unused polysilicon, metal, and contact materials in this manner reduces both critical area and system capacitance, both of which are significant DFM improvements. Reducing critical area within cells in this fashion allows greater yields on a semiconductor substrate. Reducing system capacitance in this fashion reduces power consumption of the integrated circuit, another manufacturability improvement. Additionally, when the unused elements are removed critical geometry may be improved, making way for more DFM improvements within the cells themselves.
In examining
As noted above, computer algorithms may make subsequent DFM improvements after cells have been placed and routed, including some improvements that are mutually exclusive. In such cases, designers may need to choose one DFM improvement over another because both improvements may be physically difficult or impossible to implement at the same time.
As an alternative DFM improvement that may be implemented to improve contact reliability, in lieu of improving via reliability, may be that of increasing metal layer 1 coverage area.
More generally, one should note that the order of implementing different DFM improvements, which are mutually exclusive, limits the availability of subsequent DFM modifications. Accordingly, the order of executing different DFM improvement algorithms may affect the final integrated circuit design. In some embodiments, such different DFM improvement algorithms may be entirely separate programs. In alternative embodiments, the algorithms may be included in the same program, but a designer or program parameter may determine which improvements may be made. In further embodiments, a machine may automate the process of selecting which DFM improvements will be made, potentially without the aid of software. All such embodiment variations are anticipated and come within the scope of this invention.
While not explicitly stated, inherent in the embodiment described by
After placing and routing the phantom cells, the timing performance of the circuit may be analyzed (element 710). Analyzing the timing performance of the integrated circuit design may occur early in the design, similar to the embodiment of
Once the timing analysis is complete a designer, or software performing the work of a designer, may choose to modify the placement and interconnection routes (elements 715 and 705). Modifying the placement and interconnection routes may be necessary to correct logical errors or propagation delays in the initial circuit design. Assuming the timing is acceptable, though, a designer may choose to compile a net list including the placement and routing information of the arrangement of phantom cells and interconnection routes (element 720).
The net list (created during element 720) may then be used in analyzing the phantom cell interconnections of the integrated circuit design for DFM improvement opportunities (element 725). For example, a DFM algorithm may sort through the net list for instances where external interconnects are not placed in order to add metal coverage around contacts. Alternatively, a DFM algorithm may analyze the data for instances where dummy layer fill, or waffles, may be placed in sensitive locations which might otherwise be subject to manufacturability problems. Such improvement opportunities, may be numerous and exhaustive. Dummy fill and additional metal coverage for contacts are merely two examples.
After scrutinizing the phantom cell layout and interconnections for DFM improvement opportunities, a designer may select precisely which DFM modifications will be implemented (element 730). For each instance where a DFM modification has been identified, a DFM algorithm may then select the affected phantom cell and alter the appropriate cell parameters (element 735). For example, a cell containing an n-fet and p-fet pair of transistors with unused routing target elements may have the parameters for the unused elements set to zero, or disabled, such that the elements will not appear in the integrated circuit design. This process of modifying individual phantom cells may continue until all identified DFM modifications have been implemented.
Depending on which type of modifications were made to the phantom cells during the process of updating the phantom cells (element 735), a designer or software program may alter the place and route information (element 740) with updated parameters from the DFM modifications. Such update may be necessary, for example, when metal layer elements have been removed which restricted the width or length of an interconnect line. With the culprit metal layer elements removed, the interconnects may be rerouted with greater widths and shorter lengths.
Once the place and route information has been updated (element 740), a designer may again verify the integrated circuit timing performance, as well as evaluate the circuit for other circuit constraints (element 745). Verifying the timing performance may be necessary, for instance, when any logical circuit elements have been altered or if any the DFM modifications were of a nature that may affect circuit timing. Examples of other circuit constraints may be critical geometry or maximum interconnection lengths.
After verifying timing performance and satisfying any other design constraints (element 745), a DFM software algorithm may further implement other DFM improvements (element 750). The DFM software algorithm may choose to supplement a metallization layer with dummy fill in sensitive locations or increase the width of metal interconnect wires that will be carrying high current loads.
A concept alluded to above is the concept of incorporating multiple DFM improvements onto a single integrated circuit design. One may incorporate multiple DFM changes in a single step in the design process, or one may alternatively implement them in a more methodical, deliberate, and iterative manner. Regardless of the manner in which the DFM improvements are implemented in the design, whether by single pass or iteratively, the DFM improvements may occur at different times in the design process. To illustrate just some of the ways in which the DFM improvements may be implemented in the design process, we turn now to
Flowchart 701 begins with arranging one or more phantom cells (element 703). Optionally, the arrangement of phantom cells may also be globally routed but not top level routed. In other words, the general location or general paths of the routing interconnects between the large integrated circuit cell structures may be selected without actually making the top level assignments.
After the phantom cells have been arranged, a design engineer or DFM software program may then determine the in-situ, or in place, properties of the cells (element 704). Examples of what properties may be beneficial to examine at this early stage in the design process may be phantom cell orientation, phantom cell location, and general phantom cell congestion. Alternatively, the DFM software or a designer may also evaluate the design for instances where dummy fill may be placed in vulnerable locations which might otherwise be subject to manufacturability problems.
Upon determining the initial tin-situ properties of the phantom cells, the DFM software or designer may then designate which initial DFM modifications are to be made (element 706). A potential benefit of designating DFM modifications before the detailed routing is that the in-situ properties will not be based on where the targets in the phantom cell are contacted to the top level wiring.
After determining which initial DFM improvements will be made, a DFM algorithm or hardware may then update each phantom cell instance by modifying the overlay template (element 708). Once the DFM algorithm or hardware incorporates all of the designated initial DFM improvements onto the individual phantom cell instances, the preliminary design may be analyzed for performance timing (element 710). Provided that the timing is acceptable, the DFM algorithm may then proceed with the detailed routing, generating the net list, and analyzing the phantom cells for post detailed routing DFM improvement opportunities (elements 720 through 725). The design flow may then follow the same procedures as outlined in
Similar to the previous embodiment depicted in
In analyzing and modifying the programmable cells, a single set of DFM improvements may comprise a single modification, such as removing unnecessary routing target elements. Alternatively, this first pass set of improvements may comprise two or more DFM improvements, e.g. spreading interconnection wires after removing unnecessary routing elements. The process of selecting which modifications will be made may be automatic, as in the case of an automated DFM routine, or it may be manual by a designer selecting specific DFM modifications from a computer program menu.
After completing one set of DFM modifications, an algorithm may incorporate another set of different DFM modifications (element 765). In such a case, the algorithm may then re-analyze the in-situ arrangement of programmable cells for instances where the different set of DFM modifications may be implemented (elements 725 and 730), and update the affected programmable cells accordingly (element 735). This cyclical process, of implementing one set of DFM modifications followed by a second set of DFM modifications, may continue until all types of DFM improvements have been implemented.
The cyclical process of implementing DFM modifications may be prioritized, which may be necessary when the desired modifications are mutually exclusive. For example, after the integrated circuit design is placed, routed, and timed, a DFM analyzing routine may step through the net list and determine that the preliminary integrated circuit design has numerous opportunities for one particular type of DFM modification, such as eliminating unused metal layer 1 input contacts. A DFM modification algorithm may then alter the affected programmable cell parameters or implement a complimentary DFM modification, such as adding redundant vias to the top level metal. Another DFM analyzing routine may then analyze for a different type of DFM enhancement, such as adding additional metal layer 1 borders around input contacts. Another DFM enhancement algorithm may then alter the affected programmable cell parameters. As stated before, this cyclical process may continue until all desired DFM modifications are implemented.
Worth pointing out is the potential for numerous DFM opportunities that still may be implemented after routing and implementing other DFM modifications. For example, eliminating and reducing obstructions during one pass of programmable cell alterations may pave the way for straightening wires, creating shorter routes, or reducing global coupling by moving wires into previously occupied locations. These additional DFM actions may comprise one stage in the DFM improvement process (element 770). Once these additional DFM actions are complete, the computer program may then update the placement and routing information (element 775) and verify that the timing and other integrated circuit performance constraints are satisfied (element 780).
Another embodiment of the invention is implemented as a program product for use with a system to implement DFM improvements inn manufacturing integrated circuits in accordance with, e.g., flowchart 700 as shown in
In general, the routines executed to implement the embodiments of the invention, may be part of an operating system or a specific application, component, program, module, object, or sequence of instructions. The computer program of the present invention typically is comprised of a multitude of instructions that will be translated by a computer into a machine-readable format and hence executable instructions. Also, programs are comprised of variables and data structures that either reside locally to the program or are found in memory or on storage devices. In addition, various programs described hereinafter may be identified based upon the application for which they are implemented in a specific embodiment of the invention. However, it should be appreciated that any particular program nomenclature that follows is used merely for convenience, and thus the invention should not be limited to use solely in any specific application identified and/or implied by such nomenclature.
One skilled in the art of integrated circuit design will readily appreciate the flexibility and opportunities that using a programmable cell, or similar methodology, to make DFM improvements affords the field of integrated circuit fabrication. These examples are only a few of the potential cases wherein the use of post-placement-and-routing DFM algorithms, or machines and media that accomplish essentially the same, greatly enhance integrated circuit design-for-manufacturability and reliability.
It will be apparent to those skilled in the art having the benefit of this disclosure that the present invention contemplates methods, systems, and media to improve the manufacturability of cells and structures within cells formed in a semiconductor substrates of an integrated circuit. It is understood that the form of the invention shown and described in the detailed description and the drawings are to be taken merely as examples. It is intended that the following claims be interpreted broadly to embrace all the variations of the example embodiments disclosed.
Although the present invention and some of its advantages have been described in detail for some embodiments, it should be understood that various changes, substitutions, and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims. Further, embodiments may achieve multiple objectives but not every embodiment falling within the scope of the attached claims will achieve every objective. Moreover, the scope of the present application is not intended to be limited to the particular embodiments of the process, machine, manufacture, composition of matter, means, methods and steps described in the specification. As one of ordinary skill in the art will readily appreciate from the disclosure of the present invention, processes, machines, manufacture, compositions of matter, means, methods, or steps, presently existing or later to be developed that perform substantially the same function or achieve substantially the same result as the corresponding embodiments described herein may be utilized according to the present invention. Accordingly, the appended claims are intended to include within their scope such processes, machines, manufacture, compositions of matter, means, methods, or steps.
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|January 30, 2013 02:08 AM EST
ISLE OF MAN, UNITED KINGDOM -- (Marketwire) -- 01/30/13 --
__________________________________________________ 2013 Operational Update 30 January 2013 ZHAIKMUNAI 2013 OPERATIONAL UPDATE Douglas, Isle of Man - 30 January, 2013: Zhaikmunai L.P. (LSE: ZKM) ("Zhaikmunai") issues the following Operational Update summarizing key activities since the Q3 2012 Interim Results and Update on 21 November 2012. KEY HIGHLIGHTS * Zhaikmunai's total average daily production has been approximately 46,500 boepd since January 21, 2013. This is a result of tying in 3 additional gas condensate wells between the end of 2012 and the beginning of 2013 and bringing them towards full production over the first few weeks of the year. Zhaikmunai is especially pleased with the results from the Devonian gas condensate well #217 detailed below; * Fourth quarter total average daily production (Q4) averaged 37,184 boepd, taking into account Zhaikmunai's two-week annual maintenance shutdown of the GTF (Gas Treatment Facility) during October 2012. In 2012, total daily production averaged 36,940 boepd. * In 2013, total average daily production is expected to be in excess of 45,000 boepd and Zhaikmunai plans to more than double this total average daily production volume over the next 3-year period with the increased gas processing capability of the planned third GTF train. * Drilling plans over the next 12 months include 15 - 17 wells, 9 of which will be appraisal wells, 1 exploration well and 5 - 7 production wells; Production Overview * Since 21 January 2013, the total average daily production has been approximately 46,500 boepd, with the tie-in of 3 new gas condensate wells; * Q4 2012 total average daily production amounted to 37,184 boepd, representing an increase of approximately 83% compared with Q4 2011 (20,355 boepd); * Total production for 2012 increased by approximately 181% to 13,520,205 boe from 4,803,561 boe in 2011; * Total average daily production for 2012 was 36,940 boepd, an increase of approximately 181% compared to 2011 (13,158 boepd); * The product split for 2012 was as follows: Products 2012 Average 2012 Average Product Production % Crude Oil & Stabilised 15,764 boepd 43% Condensate LPG (Liquid Petroleum Gas) 2,940 boepd 8% Dry Gas 18,237 boepd 49% TOTAL 36,940 boepd 100% * The average realized oil price for 2012 was US$ 107.46/bbl. Summary of New Wells a) Devonian Gas Condensate Well #217 Zhaikmunai reports the successful drilling and testing of the partially insolated Biski-Afoninski reservoir compartment in the north-eastern part of the Chinarevskoye field. Well #217 was drilled as a deviated directional gas condensate production well for the Biski-Afoninski reservoirs at a structural high and in a partially separated fault compartment at the north-eastern block of the Chinarevskoye field, southeast of production Well #218. The reservoir pressure in this compartment is near to initial reservoir pressures and about 40 bars higher compared to other producing Biski-Afoninski wells. The flow rate is approximately 4,000 boepd, which is significantly above expectations. b) Tournaisian Gas Condensate Wells #404 and #406 (Chinarevskoye Southern Part) Gas condensate Wells #404 and #406 were drilled using the same successful directional drilling technology previously applied for Tournaisian oil production wells in the north-eastern block. Well #404 also confirms the success of the selective multi-step perforation and stimulation technology, starting with the treatment of the low permeable reservoir intervals (0.5-5.0 mD) followed by higher permeable intervals. The production log of Well #404 proved that all potential sub-layers of the reservoir interval were connected to production. The flow rates of both wells were in line with expectations at approximately 1,000 boepd. Well #404 - drilled as a deviated directional gas condensate production well for the Tournaisian reservoirs using the same drilling, perforation, and stimulation technologies as successful oil production Well #116. The well was drilled in favourable geological conditions southeast of gas production Well #31 and was perforated at depths of 4,472 - 4,549 meters after applying selective three-step perforation and stimulation technology. Well #406 - also drilled as a deviated directional gas condensate production well for the Tournaisian reservoirs southeast of Well #404, at the border of the mapped structure, with reduced reservoir thickness and low permeabilities. This well was perforated at depths 4,504 - 4,544 meters after one-step perforation and stimulation of all potential reservoir intervals. 2012 - KEY MILESTONES * Successful Pricing of US$ 560 Million Notes Due 2019 at a Coupon of 7.125% In November 2012, Zhaikmunai successfully priced US$ 560 million aggregate principal amount of senior bonds with a seven-year maturity (2019) at a fixed coupon of 7.125% per annum. The new notes were used in part to repay US$ 357 million of its existing notes, which allowed Zhaikmunai to extend 80% of its existing liabilities to 2019 and to reduce the interest rate of 10.5% on the previously issued bonds down to 7.125% on the new bonds. * Payment of Inaugural Dividend and Adoption of Dividend Policy In Q3 2012, Zhaikmunai announced the payment of its inaugural dividend, being a cash distribution of 32 cents per partnership interest (equal to US$ 60.2 million), and the adoption of a dividend policy by the Board of Directors of its General Partner of not less than 20% of the Partnership's consolidated net profit per annum. * Acquisition of 3 New Licenses In Q3 2012, Zhaikmunai signed Asset Purchase Agreements to acquire 100% of the subsoil use rights related to three new oil and gas fields (Rostoshinskoye, Darzhinskoye and Yuzhno-Gremyachenskoye) in the pre-Caspian basin to the northwest of Uralsk, located approximately 60 -120 km away from the Chinarevskoye field, for a total purchase price of US$ 16 million. In Q4 2012, the Antimonopoly Agency as well as the Ministry of Oil and Gas (MOG) of the Republic of Kazakhstan provided their consent for the acquisition of all three fields and the partnership is currently finalizing the supplementary agreements with the MOG to become the legal owner of the subsoil user rights. ZKM estimates that it will cost approximately US$ 85 million to conduct the necessary appraisal and development activities in the three fields over the next 2 - 3 years. These activities will include the acquisition of new 3D seismic data and/or the reprocessing of existing 2D and/or 3D seismic data, as well as exploration/appraisal drilling in order to validate and expand on the existing reserves reports. The latter include the following reserves estimates: 1P - 28 mmboe; 2P - 131 mmboe; 3P - 187 mmboe for the three fields taken together. Zhaikmunai believes the upside potential for these fields to be very promising. * Drilling During 2012, 9 wells were drilled and completed, bringing the total number of producing wells to 29, i.e. 11 gas condensate wells and 18 crude oil wells. * Expansion of Processing Capacity with Additional Train to GTF The design of the second phase GTF has been completed and has received approval from the Kazakh authorities. Zhaikmunai is currently analyzing and evaluating the response to proposals submitted last year to contractors for the delivery of equipment and the construction of the new gas plant. Kai-Uwe Kessel, Chief Executive Officer of Zhaikmunai commented:"2012 was an excellent year for Zhaikmunai in which we managed to achieve a number of important goals. Our first year of operating the GTF and bringing it towards full capacity reinforces the track record our team has built in successfully constructing and operating large infrastructure projects. With current average production within 5% of full capacity and our balance sheet showing a strong cash position, combined with the extension to our debt financing from our bond transaction, we have an excellent platform from which to continue to build the business. We have an important programme ahead of us in 2013 and I look forward to implementing the next stage of our development." Frank Monstrey, Chairman of Zhaikmunai commented:"I am delighted to congratulate the management team on another excellent 12 months. 2012 was a landmark year with the GTF fully operational and ramping up towards nameplate capacity consistently. 2013 will be an exciting year as we take the first steps towards our next goal of more than doubling production to over 100,000 boepd by the end of 2016. I have full confidence in the management team successfully implementing the next stage of our development and look forward to an exciting future for Zhaikmunai." Further information For further information please visit www.zhaikmunai.com Further enquiries Zhaikmunai LP - Investor Relations Bruno G. Meere Kirsty Hamilton-Smith [email protected] + 44 (0) 1624 68 21 79 Pelham Bell Pottinger Philip Dennis Elena Dobson + 44 (0) 207 861 32 32 About Zhaikmunai Zhaikmunai is an independent oil and gas enterprise currently engaging in the exploration and development and production of oil and gas. It is listed on the London Stock Exchange (Ticker symbol: ZKM). Its principal producing asset is the Chinarevskoye Field located in northwestern Kazakhstan. Zhaikmunai L.L.P., a wholly-owned subsidiary of Zhaikmunai L.P., holds a 100% interest in and is the operator of the Production Sharing Agreement for the Chinarevskoye Field. Forward-Looking Statements Some of the statements in this document are forward-looking . Forward-looking statements include statements regarding the intent, belief and current expectations of the Partnership or its officers with respect to various matters. When used in this document, the words"expects,""believes,""anticipates,""plans,""may,""will,""should" and similar expressions, and the negatives thereof, are intended to identify forward-looking statements. Such statements are not promises or guarantees, and are subject to risks and uncertainties that could cause actual outcomes to differ materially from those suggested by any such statements. Click on, or paste the following link into your web browser, to view the associated PDF document. http://www.rns-pdf.londonstockexchange.com/rns/6657W_1-2013-1-30.pdf This information is provided by RNS The company news service from the London Stock Exchange END
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Efficiency refers to how much waste a process creates. Higher efficiency produces less waste.
Assumes that the boiler is installed in an unheated space. Heat from the boiler jacket and surrounding piping is wasted.
Assumes that the boiler is installed in a heated space. Heat from the boiler jacket and surrounding piping helps satisfy the heating load.
Note: Product Title reflects this boiler's IBR Net Output Rating
The B-10 boiler systems have been heating residential and commercial buildings throughout the world for years. It has proven its fuel efficiency and durability in countries where fuel can cost up to four times as much as in the U.S. The same fuel saving technology is now available here in North America. With the three pass boiler design and low water content, heat is quickly supplied for your heating zones and hot water needs. Combined with an outdoor reset control, you can achieve a fuel savings of up to 40% over conventional single pass boilers. You will also have peace of mind since the B-10 boiler package complies with ASME and UL standards and is IBR rated. The B-10 boiler system is the cost-competitive heat and hot water system of choice.Specifications
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A lift gate is a hydraulic lift on the back of a freight truck that moves heavy items from the bed of the truck onto the street.
You do not need a lift gate if your delivery location has a loading dock or forklift.
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Even plumber was impressed with unit
By Sal
from Central Conn.
Best Uses
Comments about B-4 - 84,000 BTU Output Oil Boiler w/ Riello Burner:
The unit came quickly, was well protected and assembled with no problem. Red is a good color for it, the plumber learned quickly how fast the pipes heated up and burned his hands. Puts out a lot of heat for a small unit. easy to plumbe and service.
Bottom Line Yes, I would recommend this to a friend
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(1 of 1 customers found this review helpful)
I am a plumber on long Island
By 24/7 plumbing and heating
from long island new york
My name is ray from 24/7 plumbing and heating the biasi triple pass technology is so rite on target delivering a fast rise in temperature to 180 in twenty seconds or so! amazingly my customers are enjoying a steep savings in oil consumption. I would only install for my customers the absolute best!If you are thinking of upgrading an old boiler get an effeciant BIASI BOILER have a great day.
(1 of 2 customers found this review helpful)
By JC
from long Island
I am a plumber by trade and I have installed many boilers but this one was easy to deal with and install. This boiler got up to temp. Fast I will always recommend this boiler to anyone
excellent little boiler
By Dave
from Sanbornton, NH
Easy to put together, runs quiet and fits in a small space. Excellent product.
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["biology","chart","circuit","circulation","cloud","coast","country","cycle","cyclic","diagram","earth","eco","ecological","ecology","education","environment","evaporation","fall","flow","geography","graphic","grass","ground","groundwater","hill","hydro","hydrological","illustration","lake","land","landscape","learn","nature","plan","precipitation","rain","representation","river","schema","schematic","sea","sky","soil","steam","topography","transpiration","tree","underground","vapor","water"]biology chart circuit circulation cloud coast country cycle cyclic diagram earth eco ecological ecology education environment evaporation fall flow geography graphic grass ground groundwater hill hydro hydrological illustration lake land landscape learn nature plan precipitation rain representation river schema schematic sea sky soil steam topography transpiration tree underground vapor water See all keywords
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Posted on: 11/26/14
Posted by: Harem Mask
10 New English-Translated H-Magazine Chapters:
-Swap on the Beach!! (bikini-clad beach-goers, swinging, orgy)
-Sex Grades UP (petite older-sister, straight-shota)
-Orgasm + Creampie = Zero (slutty younger-sister, absurdly large breasts) [Andou Hiroyuki]
-Her Important Thing Left Behind (busty schoolgirl, stockings) [Itou Eight]
-Nana's Holes (anal-obsessed step-sister)
-Pure Slut! (slutty schoolgirl, prostitution)
-Sex Change Impregnation Swollen Belly End (gender-bender, r*pe, tentacles, mind-break)
-Botsuraku Reijou no Seiteki Maid Gyoumu (buxom maid, big ass, inflation) [Kazuhiro]
-A Kiss to the Future (sleeping schoolgirl, r*pe)
-Age Chichi Summe (ganguro, bikini) [Kloah]
14 New English-Translated H-Manga Additions:
-Twin Milf Ch. 12 (MILF twins, cheerleader cosplay, threesome, cheating)
-My Mountain Village Journal Ch. 10 (village of absurdly buxom women) [Kai Hiroyuki]
-Ran Kon Ch. 7 (harem of sisters-in-law) [Hanzaki Jirou]
-Sweet Maid Ch. 4 (now complete) (trio of maid sisters, harem)
-The Otaku in 10,000 B.C. Ch. 11-14 (the cavegirl epic continues!)
-Dark Elf Ch. 5 (dark-elf, lingerie, stockings)
-Aneman Ch. 4 (dark-skinned older-sister and shy sister, threesome)
-Madam Palace Ch. 7-9 (now complet/e) (harem of MILFs)
-Negative Kanako-sensei Ch. 1-2 (glasses-clad teacher, hardcore, fucked-silly, cosplay)
-Natsumitsu x Harem! Ch. 2 [Akatsuki Myuuto]
-On a Distant Island Ch. 3-4 (now complete) (mother x son on deserted island, impregnation)
-Kanojo de Ippai 1 Ch. 6 (office lady, humorous)
-Life with Married Women Just Like a Manga 3 Ch. 3-9 (now complete) (Various MILFs, harem)
-My Exotic Girlfriend Ch. 2 (petite tomboy, humorous)
2 New Complete English-Translated H-Manga Additions:
-Thank You Very Bitch (Various stories featuring slutty heroines) [Funi Funi Lab]
-Sis Ero (Various stories following a pair of buxom schoolgirls)
(The doujin titles without links are only in the member's section.)
Posted on: 11/24/14
Posted by: GC Midnight
For this week's New Translations, we have a Super Danganronpa 2 doujin from Biwa, an Arcana Heart doujin from Mushimusume featuring Scharlachrot, a KanColle doujin from Misty Isle, and Purple Haze's EroCos 35 featuring Rangiku from Bleach. We also have a Touhou doujin from Arysuivery, a Kenichi doujin from Honey Bump, a Dynasty Warriors doujin from Mean Machine, and the last 4 chapters of Devil Cherry Pie from Arsenal.
And for the members' section, we have a Love Live doujin from Mix Fry, a KanColle doujin from Mozuchichi featuring Atago and Takao, a To LOVE-Ru doujin from PTD, and an Amagami doujin from Irodori featuring Haruka. We also have a full-color Idolmaster doujin from Atelier Maruwa, a Sabagebu doujin from Moon Ruler, a Bakemonogatari doujin from Bloody Okojo featuring Karen and Tsubasa yuri, and the first 3 chapters of an H-manga by Kon-Kit (some of these chapters have been previously translated, these are re-edits with the higher-quality Tankoubon scans).
(Preview here)
(Preview here)
(Preview here)
(Preview here)
(Preview here)
(Preview here)
(Preview here)
(Preview here)
Posted on: 11/18/14
Posted by: Harem Mask
18 New Misc. English-Translated Doujins:
-LUSTBREEDERS 2 (Yotsubato! - Fuuka, schoolgirl)
-Chibikko Bitch Full charge (HappinessCharge Precure! - Cure Honey and Cure Lovely, threesome) [Funi Funi Lab]
-Is This A Vampire-Ninja? (Kore Wa Zombie Desu-ka - Ayamu x Seraphim, bondage)
-C9-12 Warui Yume (Kantai Collection - Bismarck, netorare, stockings) [Crazy9]
-Shinkai no Masenki (Kantai Collection - Various Evil Ship Girls, giantess)
-24 Kaiten Shadow Rune (Street Fighter - Chun-Li and Cammy, muscle, gang-bang, big ass)
-This is Surely Puberty, Yumihara-san (Buddy Complex - Yumihara x Watase, schoolgirl, vanilla) [Gold Rush]
-Mite Mite Motto (Original - exhibitionist loli, dark-skin, tanlines)
-Monthly Witch Yuzuki-sama (Monthly Girls' Nozaki-kun - Seo x Wakamatsu)
-Suji Sakari Park (Original - loli catgirl, prostitution)
-What Is This Thing Called Love? 1 (Color) (Love Live - Various in full-color pin-ups)
-Won't You Help Me with My Pee Fundraiser? (Original - loli schoolgirl, prostitution, urination)
-I Don't Have Many Vaginas I Can Cum Inside Of (Boku wa Tomodachi ga Sukunai - Kodoka x Kabato, urination, lol*con)
-Victim Girls Zoukangou Gareki DX (Color) (Girls und Panzer) [Fatalpulse]
-Benten Kairaku 24 Nami Nori Kame (One Piece x Dragonball Z - Nami x Master Roshi, humorous)
-Lucrecia 1 (Final Fantasy 7 - Hojo x Lucrecia, MILF, netorare)
-Lucrecia 2 (Final Fantasy 7 - Hojo x Lucrecia, MILF, netorare)
-YURI-ON! #1 "Mesomeso Azunyan!" (K-ON - Yui x Azusa, yuri)
-Mikuru to Issho! (The Melancholy of Haruhi Suzumiya - Mikuru, lactation)
3 New English-Translated Idolmaster Doujins:
-Teach Me! Azusa-san (Ryo x Yumeko and Azusa x Producer)
-Pleading Iorin (Iori x Producer, lingerie, lol*con)
-IORIX Final (Iori x Producer, anal, lol*con)
4 New English-Translated Touhou Doujins:
-Inside The Meat (Patchouli, buxom, bondage, tentacle-r*pe)
-Aya-chan Fuuzoku (Aya, prostitution, fucked-silly)
-Lewd Creature From Hell (Kisume, lol*con, tentacle-r*pe)
-Izayoi Sakuya R*pe Machine (Sakuya, r*pe, mind-break, bondage)
(The doujin titles without links are only in the member's section.)
Posted on: 11/15/14
Posted by: GC Midnight
This week in New Translations, we have two full-color To LOVE-Ru items: Moshi Rito Darkness, and Outdoor Soap Play Part 4, a Dragon's Crown doujin from Mean Machine, and a Love Live doujin from Kichirock featuring Kotori (the sequel to this doujin). We also have a full-color Idolmaster doujin from Route1, two KanColle doujins, one from Dream Halls featuring Suzuya, and the other one from Gessyu featuring Agano, as well as the next 3 chapters of Devil Cherry Pie from Arsenal.
And for the members' section, we have a Sailor Moon doujin from Linda, a Dead or Alive doujin from Kikuya featuring Ayane, a One Piece doujin from Muten featuring Rebecca, and an Evangelion doujin from Pannacotta. We also have a Daimidaler doujin from Pinvise, a Love Live doujin from Zankirow featuring Eri, an Idolmaster doujin from HBO, and an Amagi Brilliant Park doujin from Fujiya.
(Preview here)
(Preview here)
(Preview here)
(Preview here)
(Preview here)
(Preview here)
(Preview here)
(Preview here)
Posted on: 11/09/14
Posted by: Harem Mask
10 New English-Translated H-Magazine Chapters:
-The Blonde with The Blue Eyes and The Tanuki (schoolgirl, dark-skin)
-Fluffy Ninja Komaki (buxom fox-girl ninja x demon, r*pe)
-Monster Age! (elf knight and ninja raccoon girl, straight-shota, tentacles)
-Ejaculation Memory (reunion with a childhood-crush)
-My First Time Growing A Plant (petite schoolgirl, tentacle-r*pe, bondage)
-Stalking Sister (yandere sister, femdom)
-Omoibito (unsatisfied MILF, cheating)
-Otokonoko nanoni Gomennasai! (crossdressing, trap-yaoi)
-That Thing From a Year Ago (loli cousin, tanlines)
-Futari no Houkago (schoolgirl, vanilla)
12 New English-Translated H-Manga Additions:
-Succu Life Ch. 4-5 (succubus, straight-shota, gang-bang)
-Summer Juices Ch. 2 (glasses-clad MILF)
-Ane Unsweet Mihiragi Hiyori Ch. 4-6 (buxom younger sister, gangbang, netorare)
-Nudist Beach ni Shuugakuryokou de!! Ch. 3 [Shiwasu no Okina]
-Man X Koi Ch. 1 (buxom ero-manga assistance)
-The Idols are Growing Up Ch. 1-2 (femdom loli idols, micro bikinis)
-Homestay Ch. 1-5 (MILF, netorare, mind-break)
-Oshikake Fiancée Ch. 3 (busty fiancée)
-Sweet Maid Ch. 3 (glasses-clad maid)
-Stamen and Pistil and Fertilization Ch. 3 (petite and buxom schoolgirls, r*pe)
-My Exotic Girlfriend Ch. 1 (mysterious schoolgirl, humorous)
-Yuri Zuki Kanojo wa Yuri Kanojo ga Dekinai Ch. 3 (tall girlfriend)
(The doujin titles without links are only in the member's section.)
Posted on: 11/05/14
Posted by: GC Midnight
In this week's New Translations, we have a Mahouka doujin from Red Crown, a Love Live doujin from Kensoh Ogawa featuring Nozomi, a To LOVE-Ru doujin from Sorairo March featuring Yui, and a doujin from Manamagu featuring various different series including Clannad and To Heart. We also have an Idolmaster doujin from Tehen, a Date A Live doujin from Kazan no You featuring giantesses, a Touhou doujin from Soronosanchi, and the first 3 chapters of Arsenal's Devil Cherry Pie.
And for the members' section, we have a Love Live doujin from Jingai Makyou featuring Eri, a Sword Art doujin from Clover, an Idolmaster doujin from Takemasaya, and a KanColle doujin from Yuriru-Rarika featuring Haruna and Kongou. We also have a full-color Black Bullet doujin from Rukonosu, a CGset from Execio, a Chuunibyou CGset from Pa.Da.Wan featuring Nibutani, and the last 4 chapters of Kon-Kit's H-manga, Netorare New Heroine.
(Preview here)
(Preview here)
(Preview here)
(Preview here)
(Preview here)
(Preview here)
(Preview here)
(Preview here)
Posted on: 11/03/14
Posted by: Harem Mask
19 New Misc. English-Translated Doujins:
-Cinderella Ecstasy - Lust Filled Catharsis (The Idolmaster - Rin, petite, fucked-silly)
-Secret Ako-chan (Saki - Ako, footjob, stockings) [Kamogawaya]
-Riko Scoop (To Love Ru - Rito, gender-bender, gym clothes)
-Riko Scoop 2 (Color) (To Love Ru - Rito, gender-bender, gym clothes)
-CHINA COMI (Gundam Build Fighters - China Kousaka x Sei, glasses, stockings)
-AdalterY (Original - cheating MILF, blackmail, mother x son)
-Toukiden Vol. 3 (Dead or Alive - Ayane and Momiji, tentacle-r*pe) [Hellabunna]
-Tsubaki Chiramuya 2 - Kourou Sange (BlazBlue - Tsubaki, r*pe, mind-break, fucked-silly) [Kanten]
-Yappari Uchi no Imouto ga Okashii (Original - younger sister, masturbation) [Kikurage-ya]
-Gahama-san Gentei (My Teen Romantic Comedy SNAFU - Yui x Hachiman) [Oryou]
-I'll Have Sex with the Pigtailed Girl (Ranma 1/2 - Ranma, gender-bender, buxom, mind-break)
-Miotan 4 - Everyone in Color (K-On - The K-On's in a harem sex party!)
-Female Knight R*ped by Orc (Original - female night gang-r*ped by orcs)
-Bunny Girl no Mikasa to Eroi koto suru Hon (Attack on Titan - bunny girl Mikasa x Eren)
-Chifuyu de Pon! (Infinite Stratos - Chifuyu x Ichika, femdom)
-Futanari Champion Road (Original - futa wrestling)
-NPC Notice Point Core (Fate/Extra - Sakura, vanilla)
-C.C. Lemonade (Code Geass - Lelouch x C.C.)
-I Became Cursed After Eating Koume-chan's Cookies (Color) (The Idolmaster - Koume, lol*con)
5 New English-Translated Kantai Collection:
-Let's Go Seaport Hime!! (Seaport Hime, absurdly large breasts, big ass)
-The Admiral Who Became Kongou (Kongou, body swap, gender-bender)
-Platonic Syndrome (Kaga, absurdly large breasts, stockings)
-Shimakaze-kun's First Walk (guy in Shimakaze-cosplay, crossdressing, trap-yaoi)
-Sixth Destroyer Onsen Helpers (Various, lol*con, orgy)
(The doujin titles without links are only in the member's section.)
Posted on: 10/30/14
Posted by: Harem Mask
6 New English-Translated H-Magazine Chapters:
-Ejaculation Memory 2 (childhood-friend with a knack for riddles!)
-Female Spy - A Scream from the Locked Room (office lady, r*pe)
-Impregnate the Princess! (dog-girl, gang-bang)
-Kugatsu Tsuitachi - September First (Color) (schoolgirl, lol*con)
-Snake's Den (femdom MILF teacher, footjob, pegging)
-Issho Karuku Tobi Koete (crossdressing, trap-yaoi)
13 New English-Translated H-Manga Additions:
-Natsumitsu x Harem! Ch. 1 (loli sister) [Akatsuki Myuuto]
-The Otaku in 10,000 B.C. Ch. 10 (cave-girls and history's first soap play?!)
-Princess Princess 1-3 (end) (buxom mercenary and futa elf, gang-r*pe, mind-break)
-You've Got Female Ch. 1 (gender-bender, blackmail, gang-r*pe)
-Grimoire of the Divine Comedy - Pandra Second Saga Ch. 13 (tentacles, mind-break) [Erect Touch]
-Teach Me, Sensei Ch. 9-11 (now complete) (various stories) [Hiro Kazuki]
-Younger Girls! Celebration Ch. 7 (yukata-clad cousin)
-Lover's Time Ch. 3-7 (various stories featuring schoolgirls)
-Shoujotachi no Sadism Ch. 3-5 (femdom, lol*con)
-Madam Palace Ch. 6 (buxom ghost)
-On a Distant Island Ch. 1-2 (trapped on a dessert island with buxom mom)
-Kanojo de Ippai 1 Ch. 5 (female ero-mangaka, humorous)
-Anego!! 2 17-18 (now complete) (romantic conclusion! vanilla)
3 New Complete English-Translated H-Manga Additions:
-Let's Play Lovegames, Shall We? (female master thief, femdom, prostitution)
-Karen Chameleon 2: Cosplay Lovers (the cosplay master of disguise returns!)
-Karen Chameleon 3: Cosplay Complex (the cosplay master's final attempt at love!)
(The doujin titles without links are only in the member's section.)


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