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Ira Mark Berezowsky
Sugar Land, TX
Basic information on Ira Mark Berezowsky, Sugar Land TX. Find Ira Mark Berezowsky's age, gender, possible aliases, relationship status and professional status.
Also Known As
Ira Mark Berezowsky
Ira Mark Berezowsky is in his 50's
Ira Has Lived In
Sugar Land, TX
Houston, TX
Sugar Land, TX
Houston, TX
Ira's Relatives
Ira Mark Berezowsky
Zodiac SignLibra
StatusManager , Professional Services at GE Healthcare
StatusManager , Professional Services at GE Healthcare
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Find out where Ira Mark Berezowsky has lived as well as Ira Mark Berezowsky's phone numbers and email addresses.
Ira Mark Berezowsky Has Lived in 5 States
Texas Address for Ira Mark Berezowsky
11 Pxxxxxxx Sx
Sugar Land TX
Sugar Land TX
Has Lived InGet Full Address Report
Sugar Land, TX (3 Addresses)
Houston, TX (2 Addresses)
Phone Numbers Associated with Ira Mark Berezowsky
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(281) ***-**** - Houston, TX
(281) ***-**** - Houston, TX
(713) ***-**** - Houston, TX
Email Address Associated with Ira Mark Berezowsky
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Ira Mark Berezowsky's Education Information
Known Schools Attended
Learn about Ira Mark Berezowsky's academic history. Find out which schools Ira Mark Berezowsky attended, the dates attended as well as the degrees Ira Mark Berezowsky received. The following data is not guaranteed for accuracy and should not be used for employment, insurance, credit eligibility, or for any other purpose covered under the Fair Credit Reporting Act.
Ira Mark Berezowsky Has Attended 4 Schools
University of Houston
Ira Mark Berezowsky has a Business Administration
State University of New York College at Oneonta
Ira Mark Berezowsky has a Political Science
University of Houston
1983 - 1987
Ira Mark Berezowsky has a Finance
State University of New York College at Oneonta
1977 - 1981
Ira Mark Berezowsky has a Politcal Science
Ira Mark Berezowsky's Professional Information
Information regarding Ira Mark Berezowsky's professional history. Find out previous places Ira Mark Berezowsky has worked as well as dates employed. The following data is not guaranteed for accuracy and should not be used for employment, insurance, credit eligibility, or for any other purpose covered under the Fair Credit Reporting Act.
Ira Mark Berezowsky Has Worked at 7 Places
GE Healthcare
Manager , Professional Services
General Electric Company
Ira Mark Berezowsky's Experience
Manager , Professional Services
GE Healthcare
Job Details
GE Healthcare provides transformational medical technologies and services that are shaping a new age of patient care. Our expertise in medical imaging and information technologies, medical diagnostics, patient monitoring systems, performance improvement, drug discovery, and biopharmaceutical manufacturing technologies is helping clinicians around the world re-imagine new ways to predict, diagnose, inform and treat disease, so their patients can live their lives to the fullest.GE Healthcare's broad range of products and services enable healthcare providers to better diagnose and treat cancer, heart disease, neurological diseases, and other conditions earlier. Our vision for the future is to enable a new "early health" model of care focused on earlier diagnosis, pre-symptomatic disease detection and disease prevention.Headquartered in the United Kingdom, GE Healthcare is a $17 billion unit of General Electric Company (NYSE: GE). Worldwide, GE Healthcare employs more than 46,000 people committed to serving healthcare professionals and their patients in more than 100 countries. For more information about GE Healthcare, visit our website at www.gehealthcare.com
General Electric Company
Job Details
General Electric Company (GE) is a diversified technology, media and financial services company. With products and services ranging from aircraft engines, power generation, water processing and security technology to medical imaging, business and consumer financing, media content and industrial products, it serves customers in more than 100 countries. In July 2008, the Company announced the organization of its business into four segments: GE Technology Infrastructure, GE energy infrastructure, GE Capital and Corporate Treasury and NBC Universal.In April 2008, GE Healthcare completed the acquisition of Whatman plc.In August 2008, GE Capital announced the completion of its acquisition of most of CitiCapital, Citigroup's North American commercial leasing and commercial equipment finance business. In September 2008, the Company sold its Japanese consumer finance business to Shinsei Bank.In October 2008, the Company's GE Healthcare unit acquired Vital Signs, Inc.
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Portable Document Format (PDF) is a file format used to represent documents in a manner independent of application software, hardware, and operating systems
Women's turtleneck sewing pattern available for download. Available in various sizes.
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Zen Pinball is now available on the PlayStation 4. The platform itself is free, and will include the Sorcerer's Lair table for free. Other tables will cost you, but if you already purchased them on the PlayStation 3 then tho...
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Pinball Arcade, lauded for its painstaking, detailed recreation of classic pinball tables, has touched up its work for a PS4 release. Just look at that improved lighting. It's like my childhood of inappropriately being in a d...
|Steven Hansen
Zen Studios is bringing Zen Pinball 2 to PlayStation 4 on December 17 in North America and Dec. 18 in Europe. If you've already bought into the platform on PS3, you'll be able to import a number of tables for this new versio...
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This Humble Weekly Sale is all about Zen Studios. If you're like me and don't own any Pinball FX2 content on PC yet, it is a terrific way to get into the game for cheap. At $1 or more for Steam keys, the bundle includes the C...
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Back in February, Zen Studios released three tables based on the Star Wars series, adding to the already vast library of tables for Pinball FX2. They were fantastic, diverse, and just as feature-rich as the other tables for the game. Many believed it would be hard for the studio to match that collection.
These newest tables not only match the previous set but manage to surpass it.view full story + comments
Imagine a pinball machine with no moving parts other than buttons for flippers. Imagine being able to load up any of your favorite tables from memory to play instantly. VP Cabs custom pinball machine lets you do exactly that...
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Zen Studios, the minds behind the Pinball FX series, will be bringing their Sorcerers Lair table for free to all Pinball FX2 Steam users starting June 21, 2013. Good news too, as this table isn't a timed giveaway. It will remain free for everyone, indefinitely.
No word on any console giveaways at this time though. So there you go, the best virtual pinball machine is about to get a little bit better in a few days time. This release will coincide with some premium content as well, with Marvel Civil War, Fantastic Four, and Paranormal tables all becoming available for $2.99 a piece.view full story + comments
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The current three tables of Zen Studios' Star Wars Pinball will be available as a standalone pack on PlayStation Network starting May 14. That's Star Wars Episode V: The Empire Strikes Back, Boba Fett, and Star Wars: The Clon...
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It's a rather light week as there's only a handful of new releases. The biggest being Mario and Donkey Kong: Minis on the Move for the 3DS. This is an eShop only title too, which makes it an an interesting little experiment from Nintendo.
Otherwise we got Pinball FX 2 finally hitting the PC, Sid Meier's Ace Patrol for iOS, and Monaco is finally out on Xbox Live Arcade at the end of the week.
What's looking good to you?view full story + comments
Have you played Sleeping Dogs yet? If not what the hell is wrong with you? It's an amazing game, and you really have no excuse. Especially those of you with PlayStation Plus membership as it's about to become available for fr...
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Outside the dedicated and nebulously legal emulation scene, PC hasn't received much virtual pinball love lately despite being its birthplace. Zen Studios is changing this by bringing Pinball FX 2 to Steam on May 10. The titl...
|Allistair Pinsof
Star Wars Day is this week on May 4, so Zen Studios is celebrating by offering 50% off on Star Wars Pinball across all the platform it's available on. It's going for $5 on Xbox Live Arcade, $1.99 for the Kindle HD, and $0.99 ...
|Hamza CTZ Aziz
Ah, Duck Hunt. If you think about it, the lightgun NES classic is actually the very first first-person shooter. That explains so much! I'm terrible at modern day FPS games, so it makes sense that I was bad at Duck Hunt. I gu...
|Dale North
It looks like the long wait is over, as pinball fans will be able to enjoy Zen Pinball 2 on the Wii U come March 21st. Zen Studios notes that the delay was to make sure the game was fully polished, and didn't need any patchi...
|Chris Carter
It's been a couple years since Zen Studios first took on the Marvel license and subsequently released expertly crafted tables centered around the biggest characters and story arcs in the comic book giant's vast library. Each table outdid the last, and it seemed like there was no way they could do any better with the next tables. Then they did.
After fifteen tables and no signs of slowing down, the studio has done a brilliant job with the Marvel license, so what would the next logical step be for the masterminds at Zen? Well, Star Wars Pinball, of course.view full story + comments


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Los Angeles Galaxy v Toronto FC
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Marcelo Sarvas of the Los Angeles Galaxy chases after the ball with... News Photo 165257398Ball,Canada,Chasing,Full Length,Horizontal,Los Angeles Galaxy,Major League Soccer,Match - Sport,Soccer,Soccer Field,Sport,Toronto,Toronto FCPhotographer Claus AndersenCollection: Getty Images Sport 2013 Claus AndersenTORONTO, CANADA - MARCH 30: Marcelo Sarvas #8 of the Los Angeles Galaxy chases after the ball with John Bostock #7 of Toronto FC in an MLS game on March 30, 2013 at BMO field in Toronto, Ontario, Canada. The LA Galaxy and the Toronto FC played to a 2-2 tie. (Photo by Claus Andersen/Getty Images)


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Now it's easy to do banking 24/7 from your mobile device. FLCB Mobile Banking is free and allows you to safely and securely access your accounts, transfer funds, pay bills - right at your fingertips. To start, enroll in Florida Capital Bank's Online Banking and then simply download the free FLCB...
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All the latest Apple news, featuring developments on the iPhone, iPad, Macbooks, OS X and much more.
If you own a MacBook Air from the past couple of years there's really no need to upgrade, but a small spec bump and minor price cut make the most-current Air even more attractive.
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The most important things to know when shopping for a new laptop, hybrid, or Windows tablet.
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November 28, 2014
A gas leak that appeared to be caused by a construction crew closed Cornhusker Road from 66th to 72nd on Monday morning while crews worked to repair the line.
The leak happened around 9:30 a.m. No evacuations were necessary, but the road was closed while crews worked to repair the leak.
Click Here to access the online Public Inspection File
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State Budget
Oct 29, 2014
With its high tax rates applied to a narrow base, Minnesota remains stuck near the bottom of a key index of state tax policy. North Carolina shows how to move up.
Oct 27, 2014
ST. PAUL, Minn. — Dozens of property and business owners seethed when the city of St. Paul handed out $2.3 million in assessments for street improvements on the Green Line light rail construction project.
Oct 6, 2014
LITTLE CANADA, Minn. — A citizen watchdog running for city council on the issue of increased transparency in local government plans to boycott an Oct. 14 League of Women Voters candidate forum due to the group's ban on video or audio recording by anyone outside of the media.
Oct 2, 2014
MINNETONKA, Minn. — The League of Women Voters called police Tuesday to stop video trackers from filming a candidates' forum at Minnetonka City Hall.
Sep 23, 2014
ROSEVILLE, Minn. — The game plan called for electronic pull-tabs to score up to $350 million for the Minnesota Vikings' controversial billion-dollar stadium, now under construction.
Sep 2, 2014
DULUTH, Minn. — You quickly get a clue about the scope of Duluth's street repair problem by logging onto the city website.
Aug 29, 2014
ST. PAUL, Minn. — After years of organizing home-care workers and waging a divisive 2013 legislative battle, the Service Employees International Union prevailed this week in the largest public-sector union election in Minnesota history.
Aug 27, 2014
ROCHESTER, Minn. — Jim Gander's local and state taxes will help pay for an $85 million expansion of the Mayo Civic Center. So will the heating and plumbing contractor get a shot at some of the 700 jobs spread over three years of the publicly funded project?
Jul 30, 2014
MINNEAPOLIS, Minn. — Days before the scheduled start of the largest-public sector labor union election in state history, nine Minnesota home-care workers filed a lawsuit in U.S. District Court in Minneapolis aimed at stopping it.
Jul 21, 2014
I picked up the Star Tribune on Friday and read through the headlines. The front page had a teaser with a small photo of former state economist Tom Stinson and text that read "8,500 jobs added; jobless rate at 4.5%. U Economist Tom Stinson calls figures encouraging." So I turned to the business section and read the lead headline again saying Minnesota had gained 8,500 jobs in June.


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Patti Stanger of The Millionaire Matchmaker
Patti Stanger of The Millionaire Matchmaker
According to the Examiner.com, Patti Stanger was recently at a speed dating event in Los Angeles and provided some helpful tips for those in attendance about meeting singles online and online dating. Stanger is the host of the popular network television program The Millionaire Matchmaker in addition to being the author of 'Become your own matchmaker" and a celebrity host on XM Radio.
Her tips for the speed daters after listening in on some of the conversations included "Don't tell your life story, Get to the point." and "Let the men do the work." She also provided tips to the Examiner.com team prior to the speed dating event. These tips included "Never go past two drinks on a date." and "Don't talk about the ex.". No one wants to know about your last relationship unless they ask and then they still probably don't want to know too much.
Finally there was a list of people to avoid that she shared which ranged from "Toxic People" and "Alcoholics" to "Addicts" and the "Fixers". Your interruption is required on some of her personality descriptions. I think we will get more good advice from Stanger in the coming weeks as her book goes to paperback at the end of the month.
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9 Comments »
Some of her advice is commonsense and pretty good. But I don't think there is any reason today to 'let the men do the work', a lot of men and women today don't care who makes the moves in the relationship.VA:F [1.9.22_1171]VA:F [1.9.22_1171]
This post has inspired me to try again. I have had terrible luck with men the last few years. One turned out to be a bank robber high school teacher. Another was a closet junkie who supported his lifestyle on the streets of Manhattan. And, a third, turned out to be a gay pianist who when he said he wanted to stay behind and jam with the boys, he really meant it.
So, perhaps this is the turning point. Thanks a million.
And, Happy New Year
Where I satisfy my only meaningful hobby: ToysPeriod is a leading online shop specializing in lego sets and model railroad equipment.VA:F [1.9.22_1171]VA:F [1.9.22_1171]
Online matchmakers are a great help for single people who are in search of a life partner. The main benefit is that they match your profile with other free dating sites profile and find out whether the compatibility factors are favorable or not. They conduct compatible tests with the help of experts in relationships. I have read this interesting topic about right direction for online matchmaker are blog here :
http://freedatingtipsonline.bfora.com/2010/01/25/right-direction-for-online-matchmaker/VA:F [1.9.22_1171]VA:F [1.9.22_1171]


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OSHA cracks down on violators to discourage employers from cutting corners or underfunding safety programs
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Not sure what you are asking. The requirements for securing cables can be found in
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I have been involved with the electrical industry for over 40 years, I believe that a
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Starting with four different triangles, imagine you have an
unlimited number of each type. How many different tetrahedra can
you make? Convince us you have found them all.
Do you notice anything about the solutions when you add and/or
subtract consecutive negative numbers?
The idea of this game is to add or subtract the two numbers on the dice and cover the result on the grid, trying to get a line of three. Are there some numbers that are good to aim for?
Use the interactivity to listen to the bells ringing a pattern. Now
it's your turn! Play one of the bells yourself. How do you know
when it is your turn to ring?
Many numbers can be expressed as the sum of two or more consecutive integers. For example, 15=7+8 and 10=1+2+3+4. Can you say which numbers can be expressed in this way?
Use the interactivity to play two of the bells in a pattern. How do
you know when it is your turn to ring, and how do you know which
bell to ring?
An irregular tetrahedron is composed of four different triangles.
Can such a tetrahedron be constructed where the side lengths are 4,
5, 6, 7, 8 and 9 units of length?
First Connect Three game for an adult and child. Use the dice numbers and either addition or subtraction to get three numbers in a straight line.
You have been given nine weights, one of which is slightly heavier
than the rest. Can you work out which weight is heavier in just two
weighings of the balance?
Mr McGregor has a magic potting shed. Overnight, the number of
plants in it doubles. He'd like to put the same number of plants in
each of three gardens, planting one garden each day. Can he do it?
How many different symmetrical shapes can you make by shading triangles or squares?
Different combinations of the weights available allow you to make different totals. Which totals can you make?
My two digit number is special because adding the sum of its digits to the product of its digits gives me my original number. What could my number be?
This article for teachers describes several games, found on the
site, all of which have a related structure that can be used to
develop the skills of strategic planning.
The NRICH team are always looking for new ways to engage teachers
and pupils in problem solving. Here we explain the thinking behind
maths trails.
Can you arrange the numbers 1 to 17 in a row so that each adjacent
pair adds up to a square number?
Find out about Magic Squares in this article written for students. Why are they magic?!
The number of plants in Mr McGregor's magic potting shed increases
overnight. He'd like to put the same number of plants in each of
his gardens, planting one garden each day. How can he do it?
Find a cuboid (with edges of integer values) that has a surface
area of exactly 100 square units. Is there more than one? Can you
find them all?
A 2 by 3 rectangle contains 8 squares and a 3 by 4 rectangle
contains 20 squares. What size rectangle(s) contain(s) exactly 100
squares? Can you find them all?
A Sudoku with clues as ratios or fractions.
Charlie and Abi put a counter on 42. They wondered if they could visit all the other numbers on their 1-100 board, moving the counter using just these two operations: x2 and -5. What do you think?
The letters of the word ABACUS have been arranged in the shape of a
triangle. How many different ways can you find to read the word
ABACUS from this triangular pattern?
A Sudoku with clues as ratios.
Two sudokus in one. Challenge yourself to make the necessary
Given the products of diagonally opposite cells - can you complete this Sudoku?
A Sudoku that uses transformations as supporting clues.
Explore this how this program produces the sequences it does. What
are you controlling when you change the values of the variables?
Ben passed a third of his counters to Jack, Jack passed a quarter
of his counters to Emma and Emma passed a fifth of her counters to
Ben. After this they all had the same number of counters.
This Sudoku, based on differences. Using the one clue number can you find the solution?
If you have only 40 metres of fencing available, what is the maximum area of land you can fence off?
There is a long tradition of creating mazes throughout history and across the world. This article gives details of mazes you can visit and those that you can tackle on paper.
Draw some isosceles triangles with an area of $9$cm$^2$ and a vertex at (20,20). If all the vertices must have whole number coordinates, how many is it possible to draw?
A Sudoku with a twist.
Four numbers on an intersection that need to be placed in the
surrounding cells. That is all you need to know to solve this
Make your own double-sided magic square. But can you complete both
sides once you've made the pieces?
Play the divisibility game to create numbers in which the first two digits make a number divisible by 2, the first three digits make a number divisible by 3...
Can you recreate these designs? What are the basic units? What
movement is required between each unit? Some elegant use of
procedures will help - variables not essential.
If you are given the mean, median and mode of five positive whole numbers, can you find the numbers?
An extra constraint means this Sudoku requires you to think in
diagonals as well as horizontal and vertical lines and boxes of
This pair of linked Sudokus matches letters with numbers and hides a seasonal greeting. Can you find it?
Rather than using the numbers 1-9, this sudoku uses the nine
different letters used to make the words "Advent Calendar".
This second Sudoku article discusses "Corresponding Sudokus" which are pairs of Sudokus with terms that can be matched using a substitution rule.
Pentagram Pylons - can you elegantly recreate them? Or, the
European flag in LOGO - what poses the greater problem?
Countries from across the world competed in a sports tournament. Can you devise an efficient strategy to work out the order in which they finished?
Move your counters through this snake of cards and see how far you
can go. Are you surprised by where you end up?
Find the smallest whole number which, when mutiplied by 7, gives a
product consisting entirely of ones.
The letters in the following addition sum represent the digits 1
... 9. If A=3 and D=2, what number is represented by "CAYLEY"?


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Brits banned for Farrell punch
Tom Hamilton in Hong Kong
June 2, 2013
Schalk Brits is sent to the cooler © PA Photos
Barbarians hooker Schalk Brits has been hit with a three-week suspension after striking British & Irish Lions fly-half Owen Farrell in Saturday's match in Hong Kong.
The suspension could see Brits miss out on the opening three matches of Saracens' 2013-14 Aviva Premiership season. The incident occurred early in the first-half of yesterday's match in Hong Kong and Brits was cited by International Rugby Board citing commissioner Simon Ryan after hitting his Sarries team-mate Farrell with his arm.
Brits was handed a yellow card at the time and he could yet be free to play for Sarries at the start of next season if the panel allow their pre-season fixtures to be taken into account. But it could have been worse for Brits with IRB judicial officer Steve Lewis deciding Brits' offence warranted a five-week suspension, but this was reduced to three due to "compelling mitigating factors."
"The IRB's sanctions for foul play have been established on the basis that a one-week period of suspension would normally result in a player missing one match," the statement read.
"Consequently, he is suspended from all rugby up to and including the third Aviva Premiership match of the 2013-14 season, unless the judicial officer confirms in writing that any pre-season match shall be considered meaningful for the purpose of regulation 17.19.11 (d), in which case such match shall be included as one of the three matches."
© ESPN Sports Media Ltd.
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Inside the all-conquering All Blacks
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The latest Week in Pictures takes in all the action from the weekend when rugby united behind Samoa
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The Wallabies showed flair in Dublin, but they still have a way to go if they are to do more than make up the numbers at the World Cup, writes Greg Growden
Ford helps England re-find focus
England broke their losing streak, but this was not them clawing their way back among the best, writes Tom Hamilton


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Redscale 50-200 - third roll
Around downtown Vernon, BC. playing with close ups and double exposureThis photo was shot on film. Taken by wrightk22 with a Lomography La Sardina - Coyote (available in our Online Shop) loaded with Lomography Redscale XR 50-200 (35mm) film in vernon, Canada. This tag describes this photo: flowers. Date: 2012-08-24. Time: Afternoon. This photo can also be found in the album Redscale 50-200 - third roll.
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Como pez en el agua
Com peix dins de l'aigua (Tardes de piscina)This photo was shot on film. Taken by espiadimonis with a Werlisa Club Color loaded with Lomography X Tungsten (35mm) film (available in our Online Shop) in puigpelat, Spain. These tags describe this photo: puigpelat, agua, aigua, water, and piscina. Date: 2012-07-14. Time: Noon. This photo can also be found in the albums L'estiu en blau (Juliol 2012).
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A process for forming portions of a compound material within an electronic circuit includes the formation of a cavity having at least one opening facing onto an access surface. The cavity furthermore has an internal wall with at least one region made of an initial material (for example, silicon). A metal is deposited close to the region of initial material. The circuit is then heated to form a portion of the compound material (for example, a silicide) in the region of initial material inside the cavity. The compound material is formed from elements of the initial material and from some of the metal deposited. The excess metal that has not formed some of the compound material is then removed from the cavity.
1. A process for forming at least one portion of a compound material formed from elements of an initial material and of a metal within an electronic circuit, comprising the following steps:
(a) formation of a cavity that includes at least one opening onto an access surface and has an internal wall having at least one region of initial material;
(b) deposition of the metal close to said region of initial material;
(c) heating of the circuit so as to form a portion of compound material in said region of initial material; and
(d) removal of at least one portion of the metal that has not formed some of the compound material from the cavity via said opening.
2. The process according to
(a) comprises the removal of at least one material from the circuit.
3. The process according to
(a) comprises the transfer of at least one material from a temporary substrate to a final substrate carrying the electronic circuit.
4. The process according to
5. The process according to
6. The process according to
7. The process according to
8. The process according to
9. The process according to
10. The process according to
11. The process according to
12. The process according to
13. The process according to
14. The process according to
15. The process according to
16. An electronic circuit including a portion of compound material manufactured by the process of
17. The electronic circuit according to
18. An MOS transistor including a gate having a portion of compound material manufactured by the process of
19. The MOS transistor according to
20. An electronic circuit including an MOS transistor having a gate with a portion of compound material manufactured by the processing of
21. A process for MOS transistor gate formation, comprising the steps of:
depositing a temporary material;
forming a transverse structure including a silicon bar doped to define source, drain and channel regions;
removing the temporary material from under the transverse structure to define a cavity;
depositing a metal on exposed surfaces of the transverse structure and in the cavity; and
heating to convert the portions of the silicon bar adjacent to deposited metal into silicide.
22. The method of
23. The method of
24. The method of
25. The MOS transistor formed by using the method of
26. A process for producing electrical connections between separate circuit portions, comprising:
defining first and second separate silicon portions;
depositing a metal overlying the first and second separate silicon portions and a structure therebetween; and
heating to convert portions of the first and second silicon portions adjacent to deposited metal into silicide, wherein the silicide from the first and second silicon portions connects.
27. The process of
28. The process of
29. The process of
forming a temporary material adjacent the first and second separate silicon portions;
burying the temporary material and first and second separate silicon portions with a covering material;
forming a chimney through the covering material to reach the temporary material; and
removing the temporary material through the chimney to form a cavity.
30. The process of
31. The method of
32. The electrical connection formed by using the method of
[0001] The present application claims priority from French Application for Patent No. 02 11989 filed Sep. 27, 2002, the disclosure of which is hereby incorporated by reference.
[0002] 1. Technical Field of the Invention
[0003] The present invention relates to a process for forming portions of a compound material inside a cavity of an integrated circuit device and to an electronic circuit incorporating portions of compound material thus obtained.
[0004] 2. Description of Related Art
[0005] The increase in electrical performance and level of integration of electronic circuits requires the design and fabrication of circuits having complex geometrical configurations. As an example, some field-effect transistors or MOS (Metal Oxide Semiconductor) transistors have a gate which completely surrounds the channel of these transistors so as to obtain better control of the conduction state of the transistor. A conducting part of the gate must therefore be formed beneath the channel, that is to say between the channel and a subjacent substrate that supports the circuit. Such MOS transistors are known as GAA (Gate All Around) transistors.
[0006] It is possible to fabricate such GAA transistors by superposing portions of materials formed in succession from the surface of a substrate, as a stack of these portions. In this case, the lower part of the gate is firstly formed above the substrate using a conducting material, then the channel, generally based on silicon, is formed above this lower gate part, and the gate is completed by forming the upper gate part above the channel. Lateral parts of the gate may be formed at the same time as the lower part or as the upper part, but at least two steps for forming the various parts of the gate are needed, making the transistor fabrication process relatively long.
[0007] In general, producing a single conducting element in several separate steps gives rise to inhomogeneities within this element, even if the element consists of a single material used in each step of its production. Such inhomogeneities have an undesirable effect on the final electrical behavior of the element.
[0008] Moreover, it is known to produce portions of a metal-silicide-type material selectively in defined regions of an electronic circuit. To do this, silicon is initially placed in these regions and, at a stage in the circuit fabrication process in which these regions are exposed, the circuit is covered with a layer of a metal capable of forming a silicide-type compound. The circuit is then heated so as to form this silicide compound in the regions where the metal is in contact with the silicon. After the heating, the metal parts deposited outside the silicon regions therefore remain unaffected and are removed, for example by dissolving them in a suitable chemical solution. Since the silicide is insoluble in the solution used, it remains in the final circuit within the initial silicon regions.
[0009] This method of forming silicide portions has a drawback in that the silicon regions within which the silicide is formed must be initially exposed. This constraint may be incompatible with a complex configuration of the electronic circuit.
[0010] There is accordingly a need to overcome this drawback in the production of integrated circuit devices.
[0011] The present invention is generally directed to allowing the formation of portions of a compound material in circuit regions that are initially buried, that is to say covered by other constituent materials of the circuit.
[0012] The present invention provides a process for forming at least one portion of a compound material formed from elements of an initial material and of a metal within an electronic circuit, comprising the following steps:
[0013] (a) formation of a cavity that includes at least one opening onto an access surface and has an internal wall having at least one region of initial material;
[0014] (b) deposition of a metal close to said region of initial material;
[0015] (c) heating of the circuit so as to form a portion of the compound material in said region of initial material; and
[0016] (d) removal of at least one portion of the metal that has not formed some of the compound material from the cavity via said opening.
[0017] According to the invention, a cavity is firstly formed in the circuit, inside which portions of a compound material are selectively formed from regions of initial material within the cavity. The compound material is formed after deposition in the cavity of a metal which is capable of reacting with the initial material to form the compound material from elements of the initial material and the metal. The excess metal that has not formed some of the compound material is then removed from the cavity.
[0018] One advantage of the process of the invention is that it is compatible with many configurations of the electronic circuit. This is because various methods for forming the cavity can be used, and selected according to each circuit configuration.
[0019] The cavity formed may especially include a cylindrical or parallelepipedal first volume open to the access surface so as to form, for example, a well starting from an exposed surface of the circuit.
[0020] It may also include a second volume into which the first volume runs on the opposite side from the access surface, the second volume extending further than the first volume parallel to the access surface. In this case, the cavity forms a cave connected via a narrow well to the exposed surface of the circuit. The cavity may furthermore have one of the above shapes, opening onto a sidewall of the circuit and being parallel, perpendicular or at any orientation to a surface of a substrate carrying the circuit.
[0021] Another advantage of the process of the invention is that there are many possible ways of arranging the portions of compound material, resulting from the initial arrangement of the regions of initial material within the circuit and from the shape of the cavity in these regions. Thus, portions of compound material having the general shape of a pad may in particular be oriented parallel or perpendicular to the access surface.
[0022] In a geometrical configuration in which the electronic circuit is placed on a substrate and in which the cavity includes a chimney approximately perpendicular to the surface of the substrate, the chimney allows access to a buried part of the circuit in order to form the portions of compound material. The process of the invention is therefore particularly suitable for circuit structures having several superposed levels of components, or of parts of components, and contributes to a reduction in the cost of the electronic circuit, this reduction being due to a reduction in the size of the substrate.
[0023] Yet another advantage of the process of the invention is the possibility of forming several portions of compound material within the circuit simultaneously. To do this, several regions of initial material must be provided in the circuit, and the cavity is formed so as to reach these regions. Optionally, the circuit may also include regions of initial material outside the cavity, where the compound material is formed simultaneously with the portions of compound material formed inside the cavity.
[0024] The cavity may be formed in various ways depending on the configuration of the circuit. In particular, it may be formed by removing at least one material of the circuit, especially from the access surface.
[0025] Another method for forming the cavity comprises transferring at least one material between a temporary substrate and a final substrate carrying the electronic circuit.
[0026] Optionally, these two methods may be combined to obtain a cavity whose shape is tailored to the configuration of the circuit and to the desired arrangement of the portions of compound material. The formation of the cavity may also include a step of constructing materials in a given pattern on the circuit, the pattern helping to define the cavity.
[0027] The initial material may comprise silicon, germanium, arsenic, selenium, or a mixed compound comprising at least one of the above elements. When the initial material comprises silicon, the compound material formed is of the metal silicide type.
[0028] Step (b) of the process may be carried out in two different ways, depending on the size of the cavity and of its opening onto the access surface. When the cavity and its opening are large enough, step (b) may comprise introducing the metal into the cavity via said opening so as to deposit the metal on at least said region of initial material.
[0029] If the cavity and its opening are too small in size to introduce the metal via the opening during deposition of the metal, step (b) then comprises depositing the metal outside the cavity, close to said opening. During the heating of step (c), the deposited metal diffuses into the cavity, via said opening in the cavity, as far as said region of initial material, so as to form a portion of the compound material in said region of initial material.
[0030] Several different methods can be used to introduce the metal into the cavity. For example, CVD (Chemical Vapor Deposition) may be used to deposit the metal chemically, starting from gaseous precursor compounds incorporating metal atoms. Such a deposition method is preferably carried out at reduced pressure, in order to allow the metal to be deposited on sides of the cavity that are remote from its opening onto the access surface. Under special conditions, the metal may be deposited by such processes in successive and continuous atomic layers.
[0031] Other possible methods for depositing the metal in the cavity use a chemical solution introduced into the cavity, which incorporates dissolved compounds based on the metal in an oxidized form. In one of these methods, called the electroless method, reducing compounds are then added to the solution, which cause the metal to be released in the form of a conducting layer coating the cavity.
[0032] The metal deposited using one of the above methods, and capable of forming a compound material, may be cobalt, tantalum, tungsten, titanium, aluminum, copper, silver, platinum, nickel, or an alloy comprising at least one of these metals. The compound material formed may be electrically conducting, depending on the role of the portions of compound material within the electronic circuit.
[0033] The operation of introducing the metal into the cavity, in order to deposit it in the region or regions of initial material inside the cavity, is preferably carried out so as not to completely fill the cavity. Thus, any stresses that appear during heating and during formation, in the cavity, of the compound material are limited. This electronic circuit caused by such stresses.
[0034] The process of the invention may furthermore be used to connect, via bridges of compound material, several regions of initial material within the cavity. To do this, the internal wall of the cavity has at least two regions of initial material separated by an intermediate region of a material other than the initial material. During step (c) in which the circuit is being heated, the initial material of at least one of said regions of initial material is made to diffuse into the metal so as to form a portion of compound material connecting said regions of initial material.
[0035] The invention also relates to an electronic circuit comprising a portion of compound material formed in the manner described above. In particular, the portion of compound material may constitute at least one electrical connection within this circuit.
[0036] The invention also relates to an MOS transistor comprising a gate having a portion of compound material formed using the above process, and to an electronic circuit comprising such an MOS transistor.
[0037] A more complete understanding of the method and apparatus of the present invention may be acquired by reference to the following Detailed Description when taken in conjunction with the accompanying Drawings wherein:
[0038]FIGS. 1a and 1 b are perspective views of a field-effect transistor during fabrication according to a first method of implementing the invention;
[0039]FIGS. 2a-2 d are sectional views, on the plane II-II indicated in FIGS. 1b and 3 a-3 d, illustrating successive steps in the fabrication of the transistor of FIG. 1 in accordance with the first method of implementing the invention;
[0040]FIGS. 3a-3 d are sectional views, on the plane III-III indicated in FIGS. 1b and 2 a-2 d, illustrating the same successive steps in the fabrication of the transistor;
[0041]FIGS. 4a-4 d are sectional views, on the plane IV-IV indicated in FIGS. 1b and 2 a-2 d, illustrating the same successive steps in the fabrication of the transistor;
[0042]FIG. 5 is a perspective view of this transistor in the state shown in FIGS. 2d, 3 d and 4 d; and
[0043] FIGS. 6 to 13 are sectional views showing various steps in the production of electrical connections using another method of implementing the invention.
[0044] In the FIGURES, for the sake of clarity, the dimensions of the various parts of the components or circuits shown are not in proportion to their actual dimensions.
[0045]FIGS. 2a-2 d, 3 a-3 d, 4 a-4 d and 6-13 are sectional views of at least one substrate and of various materials placed on a planar surface of this substrate. The sectional views are taken in planes perpendicular to the surface of the substrate. In the FIGURES, identical references correspond to similar elements. N denotes the direction perpendicular to the surface of the substrate and oriented upwards in the FIGURES, the substrate being placed in the lower part of the FIGURES. The terms �on top of�, �beneath�, �on�, �under�, �upper� and �lower� used hereafter refer to this orientation.
[0046] A first method of implementing the process of the invention will now be described in detail within the context of the fabrication of a GAA-type MOS transistor, the gate of which is made of a metal silicide.
[0047]FIG. 1a is a perspective view of a transistor 1 in the course of fabrication. The transistor 1 is fabricated on top of a substrate 100, for example made of silicon, covered with a layer 101 of insulating material, for example silica SiO2. A silica rim 102, of rectangular section, placed on the layer 101 surrounds a rectangular portion of that upper surface of the layer 101 which is occupied by the transistor 1 and defines a central depression.
[0048] This depression is filled with a temporary material 103, such as a silicon-germanium alloy, up to about two thirds of the height of the rim 102.
[0049] A first transverse structure, the ends of which are referenced S and D, connects two opposed sides of the rim 102, bearing on the latter at each of its ends and on the temporary material 103 in its central part.
[0050]FIG. 2a shows a section of the transistor 1 being fabricated in a vertical plane of symmetry II parallel to the first transverse structure. The central part of this structure is formed by a bar 3 of silicon, possibly single-crystal silicon, surrounded by a silica layer 4. The layer 4 extends between the two opposed sides of the rim 102 beneath the bar 3, as can be seen in FIG. 2a, and is present on top of the bar 3 only in a central part of the latter. In this central part, the layer 4 is furthermore covered with a portion of a silicon volume 2 flanked by two vertical walls 5 of electrically insulating material, for example silicon nitride Si3N4. The first transverse structure furthermore includes, at each of its ends bearing on the rim 102, two insulating edges 5, also made of silicon nitride. These insulating edges are each connected to the vertical walls 5 which flank the portion of silicon volume 2 via two other silicon nitride walls that run along the sidewalls of the first structure.
[0051] A second transverse structure intersects the first transverse structure at right angles, bearing on the other two opposed sides of the rim 102 and on the temporary material 103. The temporary material 103 may have a central raised part beneath the second transverse structure, which follows the shape of the lower surface of this second transverse structure seen in FIG. 3a. FIG. 3a corresponds to a section of the transistor 1 being fabricated in a vertical plane of symmetry III parallel to the second transverse structure. The silicon volume 2 forms the main part of the second transverse structure and completely surrounds, at its center, the first transverse structure. Additional walls of silicon nitride cover the side walls of the second transverse structure, these being connected to the silicon nitride walls of the first transverse structure at each internal corner of the intersection of the two transverse structures.
[0052]FIG. 4a is a third section of the transistor 1 in a vertical plane IV parallel to the plane III, but offset with respect to the latter as indicated in FIG. 2a, so as to intersect the first transverse structure outside the upper part of the silicon volume 2. FIG. 4a shows a section of the first transverse structure, composed of the silicon bar 3 surrounded laterally and underneath by the silica layer 4. This layer 4 separates the bar 3 from the lower part of the silicon volume 2. The assembly is flanked by two insulating side walls 5. FIG. 1a shows the relative arrangements between the insulating walls 5 shown in FIGS. 2a and 4 a, respectively.
[0053] The above structure is produced using techniques, known to those skilled in the art, that combine masking and material deposition and etching steps repeated so as to form all the superposed or juxtaposed volumes according to FIGS. 1a, 2 a, 3 a and 4 a.
[0054] The silicon bar 3 of the first transverse structure is intended to form the main conducting path of the transisitor 1 in its final configuration. Thus, the left end of the first transverse structure in FIGS. 1a and 2 a corresponds to the source S, the right end corresponds to the drain D and the central part of the bar 3, visible in FIG. 2a, corresponds to the channel CA of the transistor 1.
[0055] In particular, when producing the structure 1 corresponding to FIGS. 2a, 3 a and 4 a, the silicon bar 3 is appropriately doped, in a manner known to those skilled in the art, in order to exhibit conduction characteristics suitable for use of the transistor 1 as a transistor for switching between an on state and an off state, as a control transistor, as a power transistor or as a transistor more especially suitable for any other use.
[0056] Those parts of the volume 2 lying above and below the channel CA are intended to form, in the rest of the process according to the invention, the upper part GS and the lower part GI of the gate that surrounds the channel CA in the plane of FIG. 3a.
[0057] During a first step of the process according to the invention the temporary material 103 is removed from its surface portions exposed between the ends of the arms of the first and second transverse structures, inside the rim 102. When the temporary material 103 is a silicon-germanium alloy, one method of selective removal that can be used comprises bringing the exposed parts of the material 103 into contact with an aqueous chemical etching solution which is both oxidizing and acid, composed for example of 40 milliliters of 70% nitric acid HNO3, 20 milliliters of hydrogen peroxide H2O2 and 5 milliliters of 5% hydrofluoric acid HF. The silicon-germanium alloy is selectively dissolved in this solution, whereas the other materials of the transistor 1, namely the pure or doped silicon, the silica and the silica nitride in the example in question, are left intact.
[0058] The configuration of the transistor 1 obtained after this selective removal is shown in FIG. 1b. This figure shows the two transverse structures in the form of two respective bridges bearing via their ends on the rim 102, the second structure surrounding the first at the intersection between the two structures. The space initially occupied by the temporary material 103 now corresponds to a cavity C that extends under the two between the arms of the transverse structures and the corners of the rim 102. FIGS. 2a, 3 a and 4 a correspond to the fabrication stage shown in FIG. 1b, that is to say after the temporary material 103 has been selectively removed.
[0059] During a second step, a metal capable of forming a silicide material is deposited on the exposed surfaces of the transistor 1 and inside the cavity C.
[0060] This metal may be deposited using one of the processes known to those skilled in the art such as, for example, chemical vapor deposition (CVD). To do this, gaseous precursors, possibly of the organometallic type, are brought into contact with the transistor 1 and react on the exposed surfaces, forming a layer of said metal. Owing in particular to the low gas pressure maintained around the transistor 1 during introduction of the precursors, the latter penetrate into the cavity C via the openings O and cover its entire wall, including in that part facing the inside of the cavity C.
[0061]FIGS. 2b, 3 b and 4 b are sections corresponding to FIGS. 2a, 3 a and 4 a, respectively, and show the transistor 1 after the metal has been deposited. The deposited metal forms a continuous layer 6 covering the upper, lateral and lower faces of the two transverse structures, the bottom of the depression formed by the silica layer 101, the various parts of the silicon nitride spacer 5 and the silica rim 102 on its vertical and horizontal faces.
[0062] The metal employed for the layer 6 may in particular be cobalt.
[0063] The transistor 1 is then heated to a temperature suitable for forming a compound of the metal silicide type. This compound is formed in the silicon and/or polysilicon regions present at the surface of the transistor 1 or inside the cavity C, in contact with the layer 6. These silicon-metal 6 contact regions are the upper surfaces of the ends S and D of the bar 3, and the upper, lower and lateral surfaces of the volume 2.
[0064] The heating temperature, which depends on the metal of the layer 6, is for example between 500� C. and 700� C. During heating, metal from the layer 6 diffuses into the silicon of the aforementioned regions, starting from their surfaces, and silicon diffuses into the layer 6, forming a volume of mixed silicon-metal composition around the initial contact surface between the silicon and the metal. This mixed composition essentially corresponds to a compound of metal silicide type, which is electrically conducting. In the particular case of cobalt, the volume finally occupied by the silicide compound is about 3.5 times the volume occupied by the initial silicon converted into cobalt silicide.
[0065]FIGS. 2c, 3 c and 4 c show the metal silicide portions 26, 36S and 36D formed, namely on top of the bar 3 and over the entire exposed surface of the initial volume 2, that is to say the upper surface of the volume 2, the sides and the lower surface (inside the cavity) of the volume 2. The rounded shapes shown correspond to the increase in volume of the materials involved in the silicide formation reaction.
[0066] Optionally, residual silicon portions of the volume 2 may remain within the silicide formed, these being shown in FIG. 3c, but preferably the amount of metal of the layer 6 is sufficient to allow all, or almost all, of the silicon of the volume 2 to be converted into silicide.
[0067] By contrast, the thickness of the bar 3 in the direction N is sufficient for only a limited fraction of the silicon of the bar 3 to be converted into silicide, thus forming an upper silicide coating on the ends S and D of the bar 3.
[0068] Those parts of the metal layer 6 that have not formed a silicide are then removed using a selective removal process known to those skilled in the art. This removal is preferably carried out by isotropic chemical etching using a liquid solution incorporating chemical reactants selected for specifically dissolving the metal 6. Acid reactants, possibly having a combined oxidizing effect, such as nitric acid HNO3, are particularly suitable. During this removal, the liquid solution dissolves the metal and advances into the cavity C via the space left free by the dissolved metal, until the entire residual space of the cavity C has been filled and the residues of the metal layer 6 in it have been completely dissolved.
[0069]FIGS. 2d, 3 d, 4 d and 5 show the transistor 1 after this removal. The silicide portions 36S and 36D form the electrical contacts in the source region S and drain region D of the transistor 1, respectively. The silicide volume 26 also constitutes the gate surrounding the channel CA, with the upper part GS and lower part GI of this gate.
[0070] This gate is extended by silicide lands as far as the opposed sides of the rim 102 (FIGS. 3d and 5), these replacing the two ends of the second initial transverse structure. These lands may serve in particular as electrical connections, connecting the gate to components external to the transistor 1. In addition, the gate has two other extensions under the ends of the source S and the drain D of the bar 3, one of them being visible in FIG. 4d, contributing to particularly precise control of the electrical state of the transistor 1 obtained.
[0071] Cobalt was mentioned as an example of the metal 6. Any other metal capable of forming an electrically conducting silicide compound may also be used.
[0072] Preferably, the metal 6 is chosen in such a way that the corresponding silicide has a work function lying within a range of �25% around the mean value of the two work functions of a p-doped silicon material and an n-doped silicon material respectively. For such a metal, n-type or p-type complementary MOS transistors, produced using the process described, have trigger voltages equal in absolute value but of opposite signs. Such opposite values of the trigger voltages simplify the design of electronic circuits comprising the two types of transistor.
[0073] Moreover, the siliciding process according to this first method of implementing the invention allows the gates of the two types of transistor to be produced simultaneously, these being distinguished beforehand by the type of the doping of their respective bars 3.
[0074] The process of the invention will now be illustrated by the description of a second method of implementation, particularly suitable for producing electrical connections between separate circuit portions.
[0075]FIG. 6 shows a plane substrate 100, for example made of silicon, covered with a layer for electrical insulation 101, for example made of silica SiO2. The insulation layer 101 is itself covered by several portions of different materials, arranged as shown in the left-hand part of FIG. 6.
[0076] A portion of a temporary material 110 may comprise, for example, a silicon-germanium alloy similar to that used in the first method of implementing the process of the invention described above. On one side of the portion of temporary material 110, a first silicon portion 10 a formed on the insulation layer 101 is contiguous with the portion 110, over about one half of the height of the portion 110. On the opposite side of the portion 110, a second silicon portion 15 is also contiguous with the portion 110, over the entire height of the latter. A volume 11 of silica SiO2 completes the structure supported by the substrate 100 up to a uniform height, in the direction N, equal to the height of the portion 110 of temporary material.
[0077] A second planar substrate 200, possibly also made of silicon, supports a volume 12 of silica SiO2 on its upper surface, with an intermediate silica layer 201. Several silicon portions 10 b, 13 a, 13 b and 14 have been provided in the volume 12, using processes known to those skilled in the art, combining silicon deposition and etching/masking steps. These portions 10 b, 13 a, 13 b and 14 are distributed within the volume 12, as shown in the right-hand part of FIG. 6.
[0078] The upper surfaces S1 and S2 of the structures supported by the substrates 100 and 200, respectively, are then polished so as to make them strictly planar and free of surface contamination.
[0079] The substrate 200 is then inverted and placed on top of the substrate 100 with the surface S2 applied against the surface S1. A bond is then formed between the materials of the surfaces S1 and S2, bonding the substrates 100 and 200 together, using the process called wafer bonding.
[0080]FIG. 7 shows the structure thus obtained. The substrate 200 is then removed by polishing, from its surface on the opposite side from the substrate 100 towards the S1/S2 bonding interface. Optionally, the silica layer 201 is also partially removed during this polishing. Its ablation is completed by selective plasma etching (or dry etching), for example by introducing a gas capable of etching silica, such as C4F8, into the plasma.
[0081] Next, a resist mask M is produced by lithography on top of the volume 12. The mask M has an opening O via which the upper surface of the volume 12 is exposed to a directional flux F of an etching plasma (FIG. 8).
[0082] The composition of this plasma may, in particular, be identical to that used to ablate the silica layer 201. A first volume V1 is thus etched away within the volume 12, forming a chimney for access to the portion 110 of temporary material (FIG. 9).
[0083] The opening O in the etching mask M has been positioned on the volume 12 in such a way that the chimney V1 reaches the silicon portion 10 b at that end of this portion lying above the portion 110 of temporary material. The etching mask M is then removed.
[0084] A solution for selectively dissolving the silicon-germanium alloy of the portion 110 is then introduced via the chimney V1. This solution may be identical to that used in the first method of implementing the invention described above. The alloy of the portion 110 is then dissolved so as to form a second empty volume V2 (FIG. 10).
[0085] Next, a layer of metal 6, for example cobalt, is deposited over the entire structure obtained, so as to cover the upper surface of the volume 12 and the wall of the volumes V1 and V2, which join together to form a cavity C (FIG. 11).
[0086] Preferably, the metal is deposited at low pressure so as to obtain sufficient penetration, by diffusion, of the metal precursors used in this deposition into the cavity C. Thus, the entire wall of the cavity C is covered with metal, in sufficient quantity. Advantageously, the cavity C is not completely filled.
[0087] The substrate 100 is then heated to form a silicide at the surfaces of contact between the silicon and the layer of metal 6. The silicide is then formed on the parts of the wall of the cavity that are adjacent to the silicon volumes 10 a, 10 b and 15 (FIG. 12). Thanks to the part of the volume of the cavity C that has been left empty during deposition of the metal 6, no excessive stress is generated during formation of the silicide in the cavity C liable to disturb the arrangement of the various materials on the substrate 100.
[0088] The metal 6 was deposited inside the cavity C in sufficient quantity so that, during heating to form the silicide, the silicon of the portion 15 is entirely converted into silicide so as to constitute the silicide portion 156 visible in FIGS. 12 and 13.
[0089] Moreover, the two silicon portions 10 a, 10 b, the ends of which face onto the cavity C, are initially isolated by a part of the silica volume 11. During the heating step, silicon atoms coming from these portions 10 a, 10 b diffuse into the deposited metal 6 and thus form a conducting bridge of silicide material 106 electrically connecting the two portions 10 a, 10 b.
[0090] This silicide bridge can then form an electrical connection between two electronic components, such as transistors, comprising one of the two silicon portions 10 a, 10 b respectively.
[0091] Likewise, outside the cavity C, the silicon portion 14 on the upper surface of the volume 12 is converted into a silicide portion 146, consuming all the silicon initially present in the portion 14, and a silicide connection 136 is furthermore established between the two upper silicon portions 13 a and 13 b.
[0092] No silicide formation reaction takes place on the other parts covered with metal 6, such as the upper surface and the portions of the wall of the cavity that are adjacent to the silicon volume 12, together with the bottom of the cavity C formed by the insulation layer 101. The process therefore allows silicide portions to be formed selectively in regions characterized by the presence of silicon. Outside these regions, the presence of silica SiO2 inhibits silicide formation. Silicon nitride Si3N4 or any other material different from pure silicon, or silicon incorporating a small proportion of foreign atoms, also prevents silicide formation.
[0093] The excess metal 6 is finally removed by chemically dissolving it using a suitable etching solution, in the manner described above. The configuration in FIG. 13 is then obtained, which has two contact regions 146 and 156 and two connections 106 and 136. Thanks to the process of the invention, these contact regions and these connections have been produced simultaneously in parts of the circuit that are separate and distributed in any fashion, according to the design of the circuit.
[0094] Although preferred embodiments of the method and apparatus of the present invention have been illustrated in the accompanying Drawings and described in the foregoing Detailed Description, it will be understood that the invention is not limited to the embodiments disclosed, but is capable of numerous rearrangements, modifications and substitutions without departing from the spirit of the invention as set forth and defined by the following claims.
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text: Strict Standards: Redefining already defined constructor for class XML_Parser in /home/sites/www.americanpoems.com/web/store/aom/includes/os.php on line 1188 Strict Standards: Declaration of XML_Parser::raiseError() should be compatible with PEAR::raiseError($message = NULL, $code = NULL, $mode = NULL, $options = NULL, $userinfo = NULL, $error_class = NULL, $skipmsg = false) in /home/sites/www.americanpoems.com/web/store/aom/includes/os.php on line 1604 Strict Standards: Declaration of XML_Unserializer::startHandler() should be compatible with XML_Parser::startHandler($xp, $elem, &$attribs) in /home/sites/www.americanpoems.com/web/store/aom/includes/os.php on line 3503 Strict Standards: Declaration of Cache_Lite_File::get() should be compatible with Cache_Lite::get($id, $group = 'default', $doNotTestCacheValidity = false) in /home/sites/www.americanpoems.com/web/store/aom/includes/cache.php on line 1020 American Poems: Books: Crossing Unmarked Snow: Further Views on the Writer's Vocation (Poets on Poetry) Home Apparel Appliances Books DVD Electronics Home & Garden Kindle eBooks Magazines Music Outdoor Living Software Tools & Hardware PC & Video Games Search All Products Apparel Appliances Arts & Crafts Automotive Baby Beauty Books Computers DVD Electronics Gourmet Food Grocery Health Home & Garden Industrial & Science Jewelry Kindle eBooks Kitchen Magazines Miscellaneous Mobile Apps MP3 Downloads Music Musical Instruments Office Products Outdoor Living Pet Supplies Photo & Camera Shoes Software Sporting Goods Tools & Hardware Toys VHS Video On Demand PC & Video Games Watches Wireless Wireless Accessories Advanced Search Sitemap View Cart Checkout Location: Home » Books » Crossing Unmarked Snow: Further Views on the Writer's Vocation (Poets on Poetry) Crossing Unmarked Snow: Further Views on the Writer's Vocation (Poets on Poetry) enlarge Author:William Stafford Publisher:University of Michigan Press Category:Book Buy New: $74.50 as of 11/24/2014 14:22 EST details In Stock New (8) Used (12) from $15.05 Seller:Farm_For_Books Sales Rank:4,889,199 Languages:English (Unknown), English (Original Language), English (Published) Media:Hardcover Number Of Items:1 Pages:176 Shipping Weight (lbs):0.8 Dimensions (in):8.3 x 5.6 x 0.8 Publication Date:January 1998 ISBN:0472096648 EAN:9780472096640 ASIN:0472096648 Availability:Usually ships in 1-2 business days Also Available In: Paperback - Crossing Unmarked Snow: Further Views on the Writer's Vocation (Poets on Poetry) Editorial Reviews: SynopsisA plain-spoken but eminently effective poet, the late William Stafford (1914-1993) has managed to shape part of the mainstream of American poetry by distancing himself from its trends and politics. Though his work has always inspired controversy, he was widely admired by students and poetry lovers as well as his own peers. His fascination with the process of writing joined with his love of the land and his faith in the teaching power of nature to produce a unique poetic voice in the last third of the twentieth century. Crossing Unmarked Snow continues -- in the tradition of Stafford's well-loved collections Writing the Australian Crawl and You Must Revise Your Life -- collecting prose and poetry on the writer's profession. The book includes reviews and reflections on poets from Theodore Roethke to Carolyn Forche, from May Sarton to Philip Levine; conversations on the making of poems; and a selection of Stafford's own poetry. The book also includes a section on the art of teaching, featuring interviews, writing exercises, and essays on the writer's vocation. CERTAIN CONTENT THAT APPEARS ON THIS SITE COMES FROM AMAZON SERVICES LLC. 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Jamar Rogers Opens Up About His HIV Treatment
HIV-positive Jamar Rogers, The Voice's breakout star, talks to the Black AIDS Institute about the importance of adhering to his medication. Rogers stressed that side effects are only temporary and the key to surviving HIV is having a good attitude, going to your doctor's appointment and taking your meds faithfully. Read the entire interview here.
(Photo: Frederick M. Brown/Getty Images)
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Originally written on Celtics Life | Last updated 10/28/14
Ugh. The Celtics, without Kevin Garnett (and Rondo, and Sullinger, and Barbosa..) had the Heat right where they wanted them. They were up 17 in the first half, and 13 with 8:27 to go in the 4th. But they couldn't close the door. Lebron James was too good, scoring 37 points to go with 12 assists and 7 boards for Miami. The Celtics were led by Jeff Green's career high 43 points; as well as 17/8/8 from Paul Pierce. But it wasn't enough. Miami won their 23rd straight game; 105-103, and now have the 2nd longest winning streak in NBA history. Feel free to read ahead, but please - put away all sharp objects. Green started for KG and dominated the first 16 minutes of the game, much like the oversized "12" year old that dominates the Little League World Series every year. You know the one that's a foot taller than the rest of the kids, and has a mustache. That was Green. After the Heat went up 19-14, Green spearheaded a 27-5 run by the C's with a plethora of ac...
Original Story: http://www.celticslife.com/2013/03/he...
PLAYERS: Kevin Garnett, LeBron James, Jeff Green, Paul Pierce, Jason Terry, Avery Bradley, Norris Cole, Mario Chalmers, Shane Battier
TEAMS: Boston Celtics, Miami Heat
TEAMS: Boston Celtics, Miami Heat
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State medicaid and chip income eligibility standards (for, State medicaid and chip income eligibility standards. 1 (for magi groups, based on state decisions as of july 1, 2014) children pregnant women adults. Medicaid - new york state department of health, 2014 income & resource levels* family size net income for individuals who are blind, disabled or age 65+ medicaid income level for single people, couples without children. New york state medicaid plan, Medicaid/chip eligibility verification plans. medicaid and chip agencies now rely primarily on information available through data sources (e.g., the social security.
A 50-state look at medicaid expansion: 2014 | families usa, This map shows where states stand on medicaid expansion, as well as how many residents could gain medicaid coverage. New york state medicaid laws | ehow - ehow | how to, New york state medicaid laws. medicaid is a government program that provides free medical care for people who have limited resources. the cost of medicaid is shared. Medicaid and chip income eligibility limits for children, Updated | november 11, 2014. requirements for inclusion of essential community providers (ecps) in marketplaces. updated | november 11, 2014. contract offering and.
New york state department of health, Home page for the new york state department of health. Medicaid - wikipedia, the free encyclopedia, The patient protection and affordable care act, passed in 2010, would have revised and expanded medicaid eligibility starting in 2014. under the law as written. State health facts | the henry j. kaiser family foundation, Open enrollment: insights from medicare for health insurance marketplaces measuring the impact of ebola: will it reach 1.4 million?.


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Use trimmers to cut branches off of downed trees, use a vegetable peeler to shave off a bit of bark, then mark seedlings with a marker covered with poly spray or simply use a wood burner. I think I might recycle part of my Christmas tree this way! (Yes, I know, it's mid-February and my tree is still filling my front room...there just aren't enough hours in the day right now!)
Seed Stakes
Way too cool! I love them and so economical and "green"...thanx for sharing...my gal pals and I will have to try this during craft nite out! Visit me at my blog sometimes. Tiff This is really great, I am ready to get some things in the ground. Thanks for sharing a wonderful idea. Penny Awesome! I've...
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A more natural way to identify your seeds! :)
Chalkboard garden markers...plant markers..so fun to use! The large size is easy to write on....#gardening


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March 2013, TruckingInfo.com - WebXclusive
By Deborah Lockridge
Increased complexity, more focus on remanufacturing, and the importance of selling the value proposition of premium brands were the themes of a recent panel discussion of aftermarket suppliers.
Tags: Marmon Highway Technologies, HDMA, Meritor, Aftermarket, Remanufacturing, HDAD, HDAW, SKF, Cummins Filtration
December 2012, TruckingInfo.com - Feature
The Heavy Duty Manufacturers Association and MacKay & Company have announced the participants for the Heavy Duty Supplier panel, one of the three Industry Expert Discussion Panels to take place as part of the Heavy Duty Aftermarket Dialogue conference
Tags: Business, HDMA, Aftermarket
We offer e-newsletters that deliver targeted news and information for the entire fleet industry.
The expert, Mark Betner from Citgo will answer your questions Ask a question
Video:60 Minutes Report on Crumbling Infrastructure
Detroit Assurance: Collision Mitigation, Assisted Braking, Better MPG
Unsung Documentary Series: Baker Trucking
Ultimate Test Drive Video: SuperTruck A Walk Around
Kenworth Introduces World's Best Trucks 2015 Calendar
East Manufacturing Releases Scale Model Tractor-Dump Trailer
Minimizer Offers Decorated Bracket Kits
Kenworth Cabover Options Expand Applications


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Added Apr 1, 2013
by peneloping
Boston, Massachu...
Pattern by Deer and Doe. Self-drafted skirt.
Visit my blog for more pretties! http://peneloping.wordpress.com
Apr 3, 2013, 09.51 PMby TheSewingStudio
I love everything about this dress.
Apr 2, 2013, 09.40 AMby roisins
Looks absolutely stunning!
Apr 2, 2013, 09.40 AMby roisins
Looks absolutely stunning!
Apr 1, 2013, 08.58 PMby iamsupermom
I love the dress and the fabric.Very cute !!!!
Apr 1, 2013, 06.00 PMby Mary Athey
this is just fabulous on you and the back has the wow factor x
Apr 1, 2013, 05.15 PMby lentretemps
I love this belladone, one of the best I've ever seen ! (and I've seen a lot a Belladone on the internet !)
Apr 1, 2013, 04.28 PMby katya
I love the fabric, and the cut out at the back. So cute.
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Additional Information
Somersby cider recruits comedian Jake Yapp for series of humorous videos
Rubbish, plotless CGI movies, app updates, beige food and box-sets are the subjects of a series of video diatribes by '8 out of 10 Cats' comedian Jake Yapp, in a campaign for cider brand Somersby.
Somersby: comedian Jake Yapp bemoans rubbish CGI in modern blockbusters
The series of films are part of a content and social campaign being launched by the Carlsberg-owned brand.
The first sees Yapp get on his soapbox about CGI in rubbish films.
In the second spot, Yapp holds forth on beige food.
Next under Yapp's scalpel-like wit is modern music.
The subject of automatic app updates is his next victim.
Finally, Yapp jabbers away about box-sets.
Client: Matt Peach, senior brand manager, Somersby
Agency: DigitasLBi
Creatives: Abi Ellis, Richard Morgan, Christopher McKee
This article was first published on marketingmagazine.co.uk
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We, Marlene, Tony and I , made our way to Bali for a dive trip which would be first for Marlene and I. The highlight of the trip was to see Mola Mola. Upon reaching Bali, we were told that the season to catch these rarity was over and they have not had any sighting for the last 3 weeks.
On the 9th October, we headed out to a dive site called Crystal Bay, at Nusa Penida, Bali. We started the dive with surface temperature at 26degrees Celcius. The currents were strong and we were running low on air. I said a silent prayer asking God to let Marlene see the Mola Mola as this was our first honeymoon. After about 25minutes of diving, I was about to call it quits and do my safety stop. Just as I was about to signal my buddy to do the safety stop, she starts pointing out to the blue while banging her tank with her pointer. A sudden rush of adrenaline filled me as I turned to see what was she pointing to. From afar I could see a silhouette of something that I have longed to see. No I was not having narcosis. I could think clearly. I quickly prepared my camera to shoot this silhouette and finned as fast as I could. There it was this huge creature, so mighty yet so shy and graceful. A rush of excitement, happiness and thankfulness filled my heart at the same time my mind telling me to keep a note of my air consumption. The happiness was seen on all our faces. Awesome! I started shooting the giant puffer, Mola Mola with my humble camera. As I captured its images, I realized it was coming close towards me. I could see its eyes and mouth so clearly as it moved its was towards the sun. It was a good 10 minutes of playing with the giant, when I called for the safety stop to be done. I could see the immense joy in both Tony and my wife, Marlene's face. I was happy and contented. Just the day before, I asked her,"What makes a honeymoon?" At that point, when I saw her face glow, God had answered my silent prayer, I knew the answer to my question, what makes a honeymoon is an unforgettable memory that is shared by both. This was definitely one. The trip was fantastic as we managed to also play with the Harlequin Shrimps and Manta Ray.
The ocean sunfish, Mola mola, or common mola, is the heaviest known bony fish in the world. It has an average adult weight of 1,000 kg (2,200 lb). Sunfish live on a diet that consists mainly of jellyfish, but because this diet is nutritionally poor, they consume large amounts in order to develop and maintain their great bulk. Females of the species can produce more eggs than any other known vertebrate. A member of the order Tetraodontiformes, which also includes pufferfish, porcupinefish and filefish, the sunfish shares many traits common to members of this order. It was originally classified as Tetraodon mola under the pufferfish genus, but it has since been given its own genus, Mola, with two species under it. The ocean sunfish, Mola mola, is the type species of the genus.
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Tag: drive genius
Disk Drill protects your Mac disks, recovers files
Many of the disk utilities available for Mac OS X have been around for quite a few years, so it's surprising when a new entry shows up in this very important class of Mac app. The latest entry, Disk Drill from Cleverfiles, comes in four different flavors ranging from a free Basic edition that may ...
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Is excessive swearing a turnoff to you?
I think it is unless you live in the ghetto or trailerpark.I use to swear every 5th word that came out of my mouth but I cut back a lot I save swearing for when I am mad.What are your thoughts?.I watched trailerpark boys and movies with excessive swearing and got a huge headache.I think people who try too hard to be tough cuss alot.And I couldn't believe that is how I sounded lol.
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It did somewhat. Here are my conclusions: I have the list of all pensions for all Hargis in the Cicil War. No pension was allocated for anyone in the Civil war in LA. I did check my LA Hargis-as-us-es. They were in LA before 1830. It seems that Thomas L. Hargis was probably not married, if he was buried with Civil war stone and recognized as such they would have found his widow for pension. But without an estimated age or birth date, it is a lead difficult to follow. I have a lot of outlet if you think he is one of your ancestors. But by requesting his sign up sheet you would know His age, His residence and if he was married. This should be in the Louisiana State Archives Just a letter and they should send you a copy.I hope it helped Angel email:email@example.com
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