text:
For aggressively scaled field effect transistors, nitrogen is incorporated into a base oxide layer, wherein, at an initial phase of a plasma nitridation process, the nitrogen ion density is maintained at a value so that incorporation of nitrogen into the channel region is minimized. Subsequently, when the thickness of the base oxide layer has increased, due to residual oxygen in the plasma ambient, the nitrogen ion density is increased, thereby increasing the nitridation rate. Preferably, the nitrogen ion density is controlled by varying the pressure of the plasma ambient. Moreover, a system is disclosed that allows control of the nitridation rate in response to an oxide layer thickness.
1. A method of forming an insulation layer, the method comprising:
forming a dielectric oxide layer on a substrate; and
introducing said substrate into a nitrogen-containing plasma ambient having a controlled pressure,
wherein said pressure is reduced during the exposure of said substrate to said nitrogen-containing plasma ambient.
2. The method of
3. The method of
4. The method of
5. The method of
6. The method of
7. The method of
8. The method of
forming a doped active region in said substrate prior to forming said dielectric oxide layer; and
forming a field effect transistor in and on said doped active region, wherein said insulation layer is patterned as a gate insulation layer.
9. The method of
10. A method of forming an insulation layer, the method comprising:
forming a silicon dioxide layer with a first thickness on a silicon-containing semiconductor region provided on a substrate;
oxidizing said silicon-containing semiconductor region in a nitrogen-containing plasma ambient by oxygen residuals present in said plasma ambient to increase said first thickness to a second thickness; and
increasing the nitrogen ion concentration in said plasma ambient when said second thickness substantially corresponds to a threshold value.
11. The method of
12. The method of
13. A method of forming a gate insulation layer of a field effect transistor, the method comprising:
forming a dielectric oxide layer with an initial thickness on an active region formed on a substrate, said initial thickness being less than a desired design thickness of said gate insulation layer;
introducing said substrate into a nitrogen-containing plasma ambient of controlled pressure; and
reducing said pressure during exposure of said substrate to said plasma ambient.
14. The method of
15. The method of
16. The method of
17. A method of controlling a nitrogen concentration during the formation of an insulation layer, the method comprising:
exposing a substrate to a nitrogen-containing plasma ambient, said substrate having formed thereon an oxide layer of a first thickness;
monitoring the thickness of said oxide layer and generating a monitor signal indicating the monitored thickness; and
controlling at least one process parameter which determines a nitrogen ion density of said plasma ambient on the basis of said monitor signal.
18. The method of
19. The method of
20. The method of
21. The method of
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1. Field of the Invention
Generally, the present invention relates to the field of fabricating microstructures, such as integrated circuits, micromechanical structures and the like, and, more particularly, to the formation of an ultra-thin dielectric oxide layer having increased resistance against migration of charge carriers through the dielectric oxide layer.
2. Description of the Related Art
Presently, microstructures are integrated into a wide variety of products. One example in this respect is the employment of integrated circuits that, due to their relatively low cost and high performance, are increasingly used in many types of devices, thereby allowing superior control and operation of those devices. Due to economic reasons, manufacturers of microstructures, such as integrated circuits, are confronted with the task of steadily improving performance of these microstructures with every new generation appearing on the market. However, these economic constraints not only require improving the device performance but also demand a reduction in size so as to provide more functionality of the integrated circuit per unit chip area. Thus, in the semiconductor industry, ongoing efforts are being made to reduce the feature sizes of feature elements. In present-day technologies, the critical dimension of these elements approach 0.1 μm and less. In producing circuit elements of this order of magnitude, along with many other issues especially arising from the reduction of feature sizes, process engineers face several issues. For example, one such issue involves providing extremely thin dielectric layers on an underlying material layer, wherein certain characteristics of the dielectric layer, such as permittivity and/or resistance against charge carrier tunneling and the like, have to be improved without sacrificing the physical properties of the underlying material layer.
One important example in this respect is the formation of ultra-thin gate insulation layers of field effect transistors, such as MOS transistors. The gate dielectric of a transistor has an essential impact on the performance of the transistor. As is commonly known, reducing the size of a field effect transistor, that is reducing the length of a conductive channel that forms in a portion of a semiconductor region by applying a control voltage to a gate electrode formed on the gate insulation layer, also requires the reduction of the thickness of the gate insulation layer to maintain the required capacitive coupling from the gate electrode to the channel region. Currently, most of the highly sophisticated integrated circuits, such as CPUs, memory chips and the like, are based on silicon and, therefore, silicon dioxide has preferably been used as the material for the gate insulation layer due to the well-known and superior characteristics of the silicon dioxide/silicon interface. For a channel length on the order of 100 nm and less, however, the thickness of the gate insulation layer has to be reduced to about 2 nm in order to maintain the required controllability of the transistor operation. Steadily decreasing the thickness of the silicon dioxide gate insulation layer, however, leads to an increased leakage current therethrough, thereby resulting in an unacceptable increase of static power consumption as the leakage current exponentially increases for a linear reduction of the layer thickness.
Therefore, great efforts are presently being made to replace silicon dioxide by a dielectric exhibiting a higher permittivity so that a thickness thereof may be higher than the thickness of a corresponding silicon dioxide layer providing the same capacitive coupling. A thickness for obtaining a specified capacitive coupling will also be referred to as capacitive equivalent thickness and determines the thickness that would be required for a silicon dioxide layer. It turns out, however, that it is difficult to incorporate high-k materials into the conventional integration process and, more importantly, the provision of a high-k material as a gate insulation layer seems to have a significant influence on the carrier mobility in the underlying channel region, thereby remarkably reducing the carrier mobility and thus the drive current capability. Hence, although an improvement of the static transistor characteristics may be obtained by providing a thick high-k material, at the same time, an unacceptable degradation of the dynamic behavior presently makes this approach less than desirable.
A different approach that is currently favored is the employment of an integrated silicon oxide/nitride layer stack that may reduce the gate leakage current by 0.5 to 2 orders of magnitude while maintaining compatibility with standard CMOS process techniques. It has been found that the reduction of the gate leakage current mainly depends upon the nitrogen concentration incorporated into the silicon dioxide layer by means of plasma nitridation. Although this approach seems to relax the issue of gate dielectric leakage for the present circuit generation, this approach does not seem to allow further aggressive dielectric thickness scaling required for future device generations. To more clearly demonstrate the problems involved in the conventional process technique, a typical process flow for forming a gate insulation layer, including a nitride/silicon dioxide layer, will now be described with reference to FIGS. 1a-1 e.
In FIG. 1a, a semiconductor device 100 comprises a silicon substrate 101, in which an active region 103 is defined by shallow trench isolations 102. A thin dielectric base layer 110, for example formed of a grown oxide layer, covers the active region 103. Moreover, the semiconductor device 100 is exposed to a nitrogen-containing plasma, indicated by reference sign 104.
Typically, the semiconductor device 100 may be formed according to the following process sequence. After formation of the shallow trench isolation 102 and various implantation steps to generate a required well dopant profile (not shown) in the active region 103, the dielectric base layer 110 is formed by a conventional oxidation process or by a rapid thermal oxidation process. Subsequently, the semiconductor device 100 is exposed to the nitrogen-containing plasma 104 to introduce nitrogen ions into the silicon dioxide layer 110 to improve, as explained above, the resistance of the dielectric base layer 110 against charge carrier migration and to increase the permittivity thereof. An energy of the ions in the nitrogen-containing plasma 104 is substantially determined by the difference between the plasma potential and the floating potential of the semiconductor device 100, wherein this voltage is difficult to adjust or even may not be adjustable at all. The ion density and, thus, the nitridation rate depends on process parameters, such as the high frequency (HF) power, the temperature of the plasma ambient 104, the pressure thereof, and the like.
As is well known, nitrogen atoms, introduced into the active region 103 and thus into the channel region of the transistor device to be formed, significantly affect the electrical characteristics of the transistor device in that both the crystallinity of the active region 103 is deteriorated and the charge carrier mobility is degraded. Consequently, the introduction of nitrogen into the active region 103 has to be suppressed as much as possible in view of a required high transistor performance. On the other hand, a thickness of the dielectric base layer 110 is to be scaled down in conformity with the device dimensions which would, however, at a certain minimum dielectric thickness, lead to an increased penetration of nitrogen ions into the active region 103 during the plasma treating 104. As a consequence, there exists a severe trade-off between the improvement of the transistor device performance by scaling down the dielectric base layer 110 and the device degradation caused by the incorporation of nitrogen into the active region 103. FIGS. 1b and 1 c will more clearly illustrate this situation.
In FIG. 1b, on the left-hand side, a cut-out of FIG. 1a is schematically illustrated in a magnified view, in which the dielectric base layer 110 includes nitrogen atoms according to a concentration profile 112 along a depth direction 111. As is evident from FIG. 1b, a thickness 113 of the dielectric base layer 110 is selected so that a penetration of nitrogen into the underlying active region 103 is minimal. The right-hand side of FIG. 1b depicts a graph, wherein the concentration profile 112 is plotted versus the depth direction 111. As can be seen from this graph, the nitrogen concentration drops to a very low value, which in the present illustration is idealized as 0, within the thickness 113 of the base layer 110, thereby substantially avoiding any device degradation caused by the reduction of carrier mobility. FIG. 1b represents the situation when the design thickness 113 is in conformity with a desired channel length and suffices to still allow a substantial blocking of the nitrogen.
FIG. 1c, on the other hand, illustrates the situation when a thickness 113′ of the base layer 110 has to be reduced in conformity with design rules compared to that of FIG. 1b and, therefore, the concentration profile 112 reaches down into the active area 103. The right-hand side of FIG. 1c shows a resulting nitrogen concentration 112 with respect to the depth direction 111 and clearly reveals that a significant amount of nitrogen is in the active region 103, to thereby negatively affect the carrier mobility.
FIG. 1d schematically shows the semiconductor device 100 in an advanced manufacturing stage. Drain and source regions 107 are formed within the active region 103 and a gate electrode 106 is formed on the patterned dielectric base layer 110, which is now indicated as 110 a, wherein the gate insulation layer 110 a has the thickness 113 and a nitrogen concentration profile 112 as shown in FIG. 1b. Moreover, sidewall spacers 105 are formed adjacent to the gate electrode 106.
Typical process steps for forming the semiconductor device 100, as shown in FIG. 1d, include well-known advanced photolithography and etch techniques, as well as implantation steps, and thus a detailed description thereof will be omitted.
FIG. 1e, on the other hand, schematically depicts the semiconductor device 100 having the gate insulation layer 110 a with the reduced thickness 113′ as shown in FIG. 1c, so that a corresponding residual nitrogen concentration is present within the drain and source regions 107 and the relevant portion of the active region 103.
As a consequence, the prior art processing described above allows a scaling of the thickness 113 of the gate insulation layer 110 a to a value that substantially prevents penetration of nitrogen into the active region 103, thereby obtaining improved device performance. However, when design requirements demand a further scaling of the thickness 113 to conform to the corresponding transistor dimensions, i.e., when the design capacitive equivalent thickness requires the thickness 113′, an unacceptable amount of nitrogen is introduced into the surface portion of the active region 103 so that the reduced carrier mobility may result in a device performance degradation.
In view of the problems explained above, it is thus highly desirable to provide a technique allowing for improvement of the resistance of an oxide/nitride layer stack against migration of charge carriers therethrough without unduly negatively affecting the physical characteristics of an underlying material layer, such as the carrier mobility of a silicon layer.
The present invention is based on the finding that the nitrogen concentration introduced into a material layer underlying an oxide layer that is to be doped to improve with respect to permittivity and resistance against a charge carrier tunneling may effectively be reduced in that the nitrogen ion concentration during a plasma nitridation is controlled such that at an initial phase of the process a low ion density is established. During the further progression of the process, the thickness of the oxide layer may increase due to the further oxidation and/or deposition of residual oxygen and the nitrogen ion density is then increased so as to incorporate a required amount of nitrogen into the oxide layer. Especially the pressure during the plasma nitridation may be selected for controlling the nitrogen ion density in the plasma ambient.
According to one illustrative embodiment of the present invention, a method of forming an insulation layer includes the formation of an oxide base layer on a substrate. The substrate is then introduced into a nitrogen-containing plasma ambient of controlled pressure, wherein the pressure is reduced during exposure of the substrate to the nitrogen-containing plasma ambient.
According to another illustrative embodiment of the present invention, a method of forming an insulation layer comprises forming an oxide layer with a first thickness on a semiconductor region and oxidizing the semiconductor region in a nitrogen-containing plasma ambient by oxygen residuals that are present in the nitrogen-containing plasma ambient. Moreover, a nitrogen ion density is increased while the semiconductor region is oxidized.
According to still a further illustrative embodiment of the present invention, a method of forming a gate insulation layer comprises forming a base oxide layer on an active region with a thickness that is less than a predefined design thickness of the gate insulation layer. The substrate is then introduced in a nitrogen-containing plasma ambient of controlled pressure, wherein the pressure is reduced during the exposure of the substrate to the plasma ambient while simultaneously the thickness of the base oxide layer is increased by residual oxygen in the plasma ambient.
Pursuant to yet another illustrative embodiment of the present invention, a method of controlling a nitrogen concentration during the formation of an insulation layer is provided. The method includes the exposure of a substrate to a nitrogen-containing plasma ambient, wherein the substrate has formed thereon an oxide layer of a predefined thickness. The thickness of the oxide layer is then monitored and a monitor signal is generated that indicates the monitored thickness. Additionally, at least one process parameter determining a nitrogen ion density in the plasma ambient is controlled on the basis of the monitor signal.
In a further illustrative embodiment of the present invention, a system for forming an insulation layer comprises a process chamber and a plasma generator arranged therein. Moreover, a controllable vacuum generator is provided and is configured to adjust a pressure in the process chamber. Moreover, a thickness measurement tool is provided that is configured to determine the thickness of a layer formed above a substrate positioned within the process chamber. Finally, a control unit is connected to the controllable vacuum generator and the thickness measurement tool and is, furthermore, adapted to receive a monitor signal from the thickness measurement tool and to control the vacuum generator on the basis of the received monitor signal.
The invention may be understood by reference to the following description taken in conjunction with the accompanying drawings, in which like reference numerals identify like elements, and in which:
FIGS. 1a-1e schematically show a conventional transistor structure during various manufacturing stages and corresponding nitrogen profiles in a gate insulation layer;
FIGS. 2a-2c schematically show a transistor structure and respective nitrogen profiles thereof during various manufacturing stages according to one illustrative embodiment of the present invention; and
FIG. 3 schematically illustrates a system for forming an oxide/nitride layer in accordance with a further illustrative embodiment of the present invention.
While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof have been shown by way of example in the drawings and are herein described in detail. It should be understood, however, that the description herein of specific embodiments is not intended to limit the invention to the particular forms disclosed, but on the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention as defined by the appended claims.
Illustrative embodiments of the invention are described below. In the interest of clarity, not all features of an actual implementation are described in this specification. It will of course be appreciated that in the development of any such actual embodiment, numerous implementation-specific decisions must be made to achieve the developers' specific goals, such as compliance with system-related and business-related constraints, which will vary from one implementation to another. Moreover, it will be appreciated that such a development effort might be complex and time-consuming, but would nevertheless be a routine undertaking for those of ordinary skill in the art having the benefit of this disclosure.
The present invention will now be described with reference to the attached figures. Although the various regions and structures of a semiconductor device are depicted in the drawings as having very precise, sharp configurations and profiles, those skilled in the art recognize that, in reality, these regions and structures are not as precise as indicated in the drawings. Additionally, the relative sizes of the various features and doped regions depicted in the drawings may be exaggerated or reduced as compared to the size of those features or regions on fabricated devices. Nevertheless, the attached drawings are included to describe and explain illustrative examples of the present invention. The words and phrases used herein should be understood and interpreted to have a meaning consistent with the understanding of those words and phrases by those skilled in the relevant art. No special definition of a term or phrase, i.e., a definition that is different from the ordinary and customary meaning as understood by those skilled in the art, is intended to be implied by consistent usage of the term or phrase herein. To the extent that a term or phrase is intended to have a special meaning, i.e., a meaning other than that understood by skilled artisans, such a special definition will be expressly set forth in the specification in a definitional manner that directly and unequivocally provides the special definition for the term or phrase.
In the following illustrative embodiments, reference will be made to the formation of a gate insulation layer of a field effect transistor. The application of the principles of the present invention to extremely scale gate insulation layers exhibiting reduced leakage and enhanced permittivity should, however, not be considered as limiting. Rather, the formation of very thin dielectric layers are or may become relevant in a plurality of applications, such as memory devices, the dielectric of capacitors, as are frequently used as decoupling capacitors in CMOS devices, in opto-electronic microstructures, in micromechanical structures in the field of nanotechnology, and the like.
As previously noted, plasma nitridation is typically used to form ultra thin gate insulation layers, since significantly higher nitrogen concentrations can be obtained compared to conventional furnace processing. Plasma nitridation is carried out in conventional processes at a relatively low pressure to obtain high ion concentrations, while at the same time ensuring a good control of the oxide layer thickness, since the relatively short process time minimizes the amount of residual and unavoidable oxygen that is incorporated into the oxide layer so that the layer thickness is only insignificantly increased during the plasma treatment. The low pressure, and thus the relatively high ion concentration in the plasma ambient, however, entails a severe limitation for the conventional process flow when the oxide layer thickness is reduced to the thickness required for advanced integrated circuit products, e.g., less than approximately 0.5-3 nm, since an unacceptable amount of nitrogen is incorporated into the underlying channel region, as is explained with reference to FIG. 1b.
The present invention takes advantage of the fact that the nitrogen ion density is strongly related to the process pressure of the plasma ambient and therefore the flux of nitrogen ions incorporated into an oxide layer can be controlled by varying the process pressure for appropriately chosen other process parameters, such as plasma power, temperature, and the like.
Further illustrative embodiments of the present invention will now be described with reference to FIGS. 2a-2c and 3. In FIG. 2a, a semiconductor device 200 comprises a substrate 201 having formed thereon an active semiconductor region 203 that may additionally comprise a specified dopant distribution to provide for the required transistor characteristics for the field effect transistor to be formed. Since the present invention is especially advantageous when applied to silicon-based CMOS processes, the substrate 201 may be considered as any appropriate substrate for bearing a silicon-containing layer that substantially comprises the active region 203. It should nevertheless be appreciated that the active region 203 may comprise other materials, for example, germanium and the like required for adjusting the desired physical characteristics of the active region 203. The active region 203 is enclosed by an isolation structure 202, such as a shallow trench isolation usually employed in highly sophisticated semiconductor devices. A dielectric oxide layer 210 is formed on the active region 203 with a first thickness 213 that is deliberately chosen to be substantially less than a desired design thickness of the gate insulation layer to be formed. In some embodiments, the first thickness 213 is approximately 0.5-2 nm less than the desired target thickness.
In one particular embodiment, the dielectric oxide layer is substantially comprised of silicon dioxide and the active region 203 comprises silicon. The thickness 213 may be in the range of approximately 1-10 nm and in particular embodiments relating to extremely scaled transistor devices, the thickness 213 may be less than 1 nm.
Regarding the formation of the semiconductor structure 200 as shown in FIG. 2a, substantially the same process steps as already described with reference to FIG. 1a may be employed. In particular, the dielectric oxide layer 210 may be formed by conventional growth processes, such as a high temperature furnace growth or by a rapid thermal oxidation process. In other embodiments, the dielectric oxide layer 210 may be deposited by using sophisticated deposition methods, such as chemical vapor deposition method of atomic monolayers and the like. The dielectric oxide layer 210 may also be formed from HCl/H2O2 in the cleaning process.
Subsequently, the substrate 201 is introduced into a nitrogen-containing plasma ambient 204, wherein at least one process parameter is controlled to adjust a nitrogen ion density within the plasma ambient 204 to a required level. For instance, a high frequency power required to establish the plasma ambient 204 and the temperature thereof may be selected and the pressure of the plasma ambient 204 is then controlled to adjust the ion density. Since the pressure of the plasma ambient 204 is precisely and reproducibly adjustable by corresponding equipped vacuum sources, as will be described in more detail with reference to FIG. 3, an appropriate nitrogen ion concentration may be established in the plasma ambient 204 in a reliable and rapid fashion. Accordingly, the nitridation rate is precisely controllable and, thus, the amount of nitrogen ions incorporated into the dielectric base layer 210 may be controlled so as to minimize the number of nitrogen atoms penetrating the active region 203. To this end, the pressure in the plasma ambient 204 is, depending on the further process parameters, such as high frequency power and temperature in the plasma ambient, adjusted to a relatively high level so that the corresponding nitridation rate is relatively low. For example, for an effective high frequency power in the range of approximately 50-500 watts and a temperature in the range of approximately 60-500� C., an initial pressure is set to a range of approximately 10 mTorr to 1 Torr when the thickness 213 is about 1 nm or less. While the substrate 201 is exposed to the plasma ambient 204, additionally, residual oxygen ions are incorporated into the dielectric oxide layer 210, thereby continuously increasing the thickness 213.
FIG. 2b schematically shows a magnified view of the dielectric oxide layer 210 at an initial phase of the plasma treatment. The nitrogen concentration is substantially confined to the dielectric oxide layer 210 with only a minimal amount of nitrogen within the active region 203. Meanwhile, the additional incorporation of oxygen has resulted in an increased thickness 213 a.
Once the thickness 213 a has reached a specified value, the pressure in the plasma ambient 204 may be decreased so as to increase the nitrogen ion density and hence the nitridation rate. In this way, the currently prevailing nitridation rate may be appropriately adapted to the current thickness 213 a so that the amount of nitrogen penetrating the active region 203 is maintained at an allowable low level. In one embodiment, the high pressure is maintained until the required final thickness of the dielectric oxide layer 210 is obtained, and, in a subsequent step, the pressure is increased to a value as used in the conventional process flow to obtain a high nitridation rate. The second step of low pressure in the plasma ambient 204 may, however, be significantly shorter compared to the conventional approach as a significant amount of nitrogen has already been incorporated into the dielectric oxide layer 210. In other embodiments, the pressure of the plasma ambient 204 may be decreased stepwise for a plurality of steps, whenever the thickness 213 a reaches a predefined threshold value. In still other embodiments, the pressure may be substantially continuously adjusted depending on the current thickness 213 a.
Irrespective of the manner of how the pressure is controlled, a substantially graded nitrogen concentration is obtained in the dielectric oxide layer 210, with a minimum amount of nitrogen in the active region 203.
FIG. 2c schematically shows a magnified view of dielectric oxide layer 210 at a final phase of the plasma treatment, when the plasma ambient 204 is maintained at a low pressure. The thickness 213 a has reached the desired final design thickness, wherein now a required amount of nitrogen is incorporated into the dielectric oxide layer 210 so that the permittivity thereof is significantly increased while the resistance against charge carrier tunneling is also increased.
The substrate 201 may then further be processed to finally obtain a field effect transistor, wherein similar process steps may be carried out as previously described with reference to FIG. 1d or 1 e.
FIG. 3 schematically shows a system that is appropriate for carrying out the above-described process sequences. A system 300 comprises a process chamber 301 including a plasma generator 302 configured to excite a plasma upon application of an appropriate high frequency, low frequency and bias power. For convenience, any means for producing and supplying power to the plasma generator 302 are not shown in FIG. 3. The process chamber 301 further comprises a substrate holder 303 adapted to receive and hold in place a substrate, such as the substrate 201. An inlet 314 is connected to a source of precursor gases (not shown), such as nitrogen and the like. Furthermore, an outlet 312 is connected to a controllable vacuum source, in the present example the controllable vacuum source is represented by a controllable valve element 307 arranged within a vacuum pipe 313. It should be appreciated, however, that any appropriate means for establishing a negative pressure within the process chamber 301 with the required accuracy, such as rotary pumps and the like, with or without additional valve elements, may be appropriate. Moreover, one or more sensor elements, for example, a pressure sensor 306, may be provided and may be adapted to generate a sensor signal 309 indicative of the physical quantity measured by the sensor element 306. The system 300 further comprises a thickness measurement tool, in the present example, represented by a light source 304 and a light detector 305 appropriately arranged to emit a light beam to and receive the reflected light beam from the substrate holder 303, respectively. The light source 304 and the detector 305 are configured to allow the measurement of a material layer with a required accuracy. For example, the light source 304 and the detector 305 may be configured similarly to an ellipsometer as usually used for thickness measurement in semiconductor production lines. The detector 305 is therefore configured to output a monitor signal 308 indicative of the thickness of a layer to be measured. The controllable valve element 307, the detector 305 and the sensor element 306 are operatively coupled to a control unit 311, which is configured to output a control signal 310 to the valve element 307 on the basis of the monitor signal 308 and the sensor signal 309. As will be appreciated, the control unit 311 may be implemented in a general purpose computer, in a control unit that operates the thickness measurement tool 304, 305 or the process chamber 301, or the control unit may be connected to or implemented into a facility management system.
In operation, the substrate 201 having formed thereon the dielectric layer 210 with the specified thickness 213 is loaded on the substrate holder 303. The plasma ambient 204 is established upon application of an appropriate power to the plasma generator 302, while the pressure is controlled by the control unit 311 via the valve element 307. For instance, the thickness 213 may be verified by the detector 305 and the control unit 311 may then determine an appropriate pressure and, thus, an appropriate nitridation rate for an initial phase of the plasma treatment. A corresponding relationship between the thickness 213 and the required pressure within the process chamber 301 may be established on the basis of test runs and/or calculations on the basis of the model of the plasma treatment. Due to residual oxygen in the process chamber 301 during a plasma treatment, the thickness 213 continuously increases. Since the thickness is monitored by the detector 305, minor variations of the oxygen concentration within the process chamber 301 during the processing of a plurality of substrates may be compensated for by correspondingly adjusting the pressure in accordance with the �growth� rate of the dielectric oxide layer 210. Thus, the required final design thickness may reliably be obtained irrespective of oxygen concentration fluctuations.
Since the nitridation rate is strongly related to the pressure within the process chamber 301, the control unit 311 may further determine the amount of nitrogen incorporated into the dielectric oxide layer 210 by monitoring the process time and the chamber pressure. Thus, in order to obtain the required characteristics in view of leakage, barrier properties and permittivity, the control unit 311 may not only adjust the chamber pressure so as to minimize the amount of nitrogen incorporated into the active region 203 but also to introduce substantially the same amount of nitrogen into the dielectric oxide layer 210 for a plurality of successively processed substrates irrespective of slight oxygen and thus growth rate, variations.
For example, when a two step process is employed, the control unit 311 may determine the amount of nitrogen incorporated into the dielectric layer 210 at the high pressure phase and may then, after the required final thickness 213 is obtained, adjust the pressure to a sufficiently low value so that the required total amount of nitrogen is incorporated without exceeding the specified final thickness for the dielectric oxide layer 210. In other embodiments, a plurality of threshold values for the thickness 213 may be defined and the control unit 311 may determine a required pressure value for each of the predefined intermediate thickness values. For example, a corresponding designation may be implemented as look-up tables, or may be determined during run-time. Additionally, the amount of nitrogen incorporated into the dielectric oxide layer may be taken into account for establishing a suitable pressure. In other embodiments, the pressure may be substantially continuously controlled and adjusted to the current thickness and the amount of nitrogen already incorporated and still to be incorporated.
The pressure adjustment as described above may depend on further parameters, such as plasma temperature, HF power, bias power, bias voltage, chamber dimensions, and the like. Thus, the influence of the parameters may be considered when establishing a corresponding relationship between the current thickness 213 and the chamber pressure.
Thus, the system 300 allows the reliable and reproducible incorporation of nitrogen into a dielectric oxide layer, without unduly affecting the physical properties of the material provided below the dielectric oxide layer. Therefore, gate insulation layers may be manufactured having a physical thickness well beyond 2 nm.
The particular embodiments disclosed above are illustrative only, as the invention may be modified and practiced in different but equivalent manners apparent to those skilled in the art having the benefit of the teachings herein. For example, the process steps set forth above may be performed in a different order. Furthermore, no limitations are intended to the details of construction or design herein shown, other than as described in the claims below. It is therefore evident that the particular embodiments disclosed above may be altered or modified and all such variations are considered within the scope and spirit of the invention. Accordingly, the protection sought herein is as set forth in the claims below.
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Things to see and do - Canada
Leaving for Canada
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Best Canadian Motor Inns-Fort McMurray-Rusty's from185 CADBook
Quality Hotel and Conference Centre Fort McMurray from164 CADBook
Chateau Nova Hotel Fort McMurray from135 CADBook
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Quebec City and Montmorency Falls Day Trip from Montreal
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Vancouver to Whistler by Train Rail Tour
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Niagara Falls Marriott Gateway on the Falls :
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Niagara Falls Marriott Gateway on the Falls
Niagara Falls Marriott Gateway on the Falls
Address : 6755 Fallsview Boulevard CDN - Niagara Falls ON L2G 3W7
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Featuring a terrace with beautiful views of the Horseshoe Falls, this Niagara Falls, Ontario hotel is a 7-minute walk from Fallsview Casino. Free Wi-Fi is available in the lobby. The Marriott Niagara Falls Gateway on the Falls offers modern rooms with spacious windows overlooking the city or falls. Each contains a 37-inch flat-screen cable TV, refrigerator and coffee maker. Guests of the Gateway on the Falls are welcome to enjoy the indoor pool and whirlpool. A fitness center and gift shops are also available. Milestones Grill + Bar serves globally inspired meals throughout the day. Guests may also relax with a drink at the on-site Starbucks. Niagara Falls Marriott Gateway on the Falls is just 300 metres from the Scotiabank Convention Centre.
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200 Camp Hill Rd,
Fort Washington, PA, 19034-0190
Fort Washington, PA, 19034-0190
Tel: (215)628-4184
At Play & Learn we love children and it shows.
You can feel it in our morning hellos and our afternoon hugs.
You can hear it in the happy sounds of laughter and learning in our classrooms.
You can see it in our dedication to safety and our flexibility in meeting the needs of busy families.
At Play & Learn children feel safe and comfortable, ready to learn and grow.
It's a place where great relationships happen and fond memories develop.
And, Play & Learn is a place where parents find peace of mind, knowing their child is developing self-confidence and a love of learning in a nurturing and secure environment.
Our approach to learning is based on the proven concept that children learn about themselves and their world through play.
Play teaches children how to get along with others, lets them test their skills and helps them develop confidence to try new ideas.
Classrooms at Play & Learn are age-appropriate environments packed with a wide assortment of equipment and activities designed to encourage children to explore and discover at their own pace and in their own unique way.
The professional staff at Play & Learn nurture and guide each child's individual style and abilities.
School Overview
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Student Body
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State avg.: 20%
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National avg.: 13:1
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Fort WashingtonWordsworth Academy
Pennsylvania Ave & Camp Hill
Fort Washington, PA, 19034
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OrelandHoly Martyrs School
121 Allison Rd
Oreland, PA, 19075
(215)887-2044(Roman Catholic)0.9 mi | 130 students | Gr. K-9
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Po Box 127
Fort Washington, PA, 19034
(215)542-7737Alternative School1 mi | 92 students | Gr. 7-12
Fort WashingtonHey Diddle Diddle Day School
520 S Bethlehem Pike
Fort Washington, PA, 19034
(215)654-9955Daycare / Preschool1.4 mi | 21 students | Gr. NS-K
Fort WashingtonMcneil Child Development Center
7050 Camp Hill Rd
Fort Washington, PA, 19034
(215)273-8687Daycare / Preschool1.4 mi | 4 students | Gr. PK-KG
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"I wish i wasn't born" said my 6yo (m)
Find a Conversation
|Mon, 11-28-2005 - 10:32am
thanks b/c i need help!
|Mon, 11-28-2005 - 2:19pm
Oh, how sad!
I doubt that six year olds really get what they are saying about birth and death. How can they really understand the finality of these concepts? But I think that all six year olds like to have reassurance that they are loved and wanted and valuable and useful to their families. I probably would have said something like, "Oh, but *I* am so so glad you were born! What would I do without you? Where would I get my special little girl hugs? Do you know what my face would look like if I didn't have you?" Then I would show her my sad clown face.
I think kids need to know that no matter what the rest of the world thinks of them, their mother thinks they are just super-terrific.
Take care,
|Mon, 11-28-2005 - 2:26pm
well, i immediately started crying, and asked her "mommy wouldn't be able to live without you", "there's not a little girl in the world who is more loved than you", etc.
dh thinks she's needing reassurance b/c we're expecting a baby in March.
|Mon, 11-28-2005 - 6:30pm
Aaaawwwww... now see? You handled it perfectly with your super duper Mommy Instincts! :)
Your husband is probably right. Do you have other kids or will it just be the two of them (once the little stinker is born, that is :)?
When I was pregnant with my daughter, my son asked me some heartwrenching questions typical for only children who are awaiting a sibling. I always told him, "No one will ever take your place, Sweetums. You are the little boy who made me a Mommy. Before you, I was just plain old boring Susan. YOU made me a mommy and no one else will ever be able to say that!"
Hope your pregnancy is going well... :)


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16 November 2012
16 November 2012
Poor nutrition in the first 1,000 days of life – from the womb to two years of age – can lead to irreversible damage to children's minds and bodies. The World Food Programme in Asia is targeting its food assistance to make sure that children and adults get the right food, at the right time, in the right place.
WFP Offices
Latest Videos/Galleries
- 14 November 2014 Iraq: Displaced Yazidi Community To Face Harsh Winter
- 23 October 2014 WFP Provides Food Assistance to Over 1 Million Displaced in Iraq
- 23 September 2014 WFP Food Assistance Reaches Over One Million Displaced People in Iraq
- 6 September 2014 WFP Supports Displaced Families At Erbil's Baharka Camp


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Thoughts, Stories, and Bits of Wisdom
I have two brothers that I'm very proud of and if I had sisters, I'm sure that I'd be proud of them too.
However, today I want to acknowledge my oldest brother. Today he is celebrating 45 years, yes 45 years, of sobriety and being involved with Alcoholics Anonymous. His journey to sobriety was not easy and there were many times in the last 45 years where he was tempted but he never succumbed to the urge.
His career is a testament to his sobriety. He admitted that he had a problem with alcohol when it was not fashionable to do so. In fact, it was nearly a career killer. In spite of that, he rose in rank to become one of the top commissioned officers in the Royal Canadian Mounted Police. His continued involvement in AA has helped innumerable people get sober.
So please join me in raising a glass of your favourite non-alcoholic beverage to my brother.
Congratulations H!
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It's all about fatherhood, futbol and food.


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Colombo, Sri Lanka – Dwayne Bravo has been appointed Vice Captain of the West Indies team for the upcoming ICC Cricket World Cup and the world-rated allrounder is looking to make a significant contribution to the side's success.
The 27-year-old will be playing in his second World Cup and as one of the senior players in the side he plans to lead from the front and help drive the team's success.
Colombo, Sri Lanka – Chris Gayle on Thursday announced that his ultimate goal is to get his hands on the World Cup trophy.
The big left-hander, rated as one of the most destructive batsmen of all time, said he has a desire to become a world champion and bring back glory to West Indies cricket during the upcoming ICC Cricket World Cup.
NEW DELHI, India, CMC – Cricket's World governing body tweaked the format for this year's World Cup to give India and Pakistan, as well as other leading teams a chance to progress in the competition.
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Tel : 268-481-2450
Fax : 268-481-2498
Email: firstname.lastname@example.com


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thats a good idea i've got some rainx at home will give it a go
Rain-X is good. It stops the ice from sticking to the glass.
thats a good idea i've got some rainx at home will give it a go
I've just checked the school weather station... the temperature hasn't shifted from -1.6 degrees C all morning.... lovely sunshine.
So much for being in the warm South!
I went to Clapham last night and it was unbearable. So cold standing around the train platforms after missing my train. Went further south near midnight and Croydon felt warm by comparison!
I've been watching MetCheck closely and the weekend looks clear in the south, most of the snow appears to be hanging round the coast. But with the temperature hovering near 0 any rain could easily turn to snow making it hard to predict. You guys in the North and East just need to brace for more. :P
-2 in the car this morning, will see what its like, off to Essex this weekend, and snow is forecast!
However i heard majority of councils have more salt this year than they know what to do with after last year due to the media bashing, which is good.
ButterflyMoon (26th November 2010)
We have had a positive deluge of snow......oh, must have been 5 or 6 flakes this evening...
Here in Dundee they grit in advance, and sometimes several times. They also have little tractors with snow ploughs on the front they use to clear and grit the pavements. I guess that's one of the benefits of living where snow and ice are guaranteed. It's currently snowing reasonably heavily, and the roads are remaining clear.
Back home in the south of England it's a different story though, only one road in the village gets gritted, meaning the bus can have some difficulties on it's route (watching a double decker bus slide was funny until it was rather close!).
That's loads by Dorset standards!
I had to scrape frost off the car before I took my son to scouts at 7.30pm... I'm just about to start scraping again...
TBF it did actually snow for about an hour but it has stopped now and it didnt settle. But then this is South Dorset and it is still November so any snow is a huge event
I had a massive deluge of Snow this afternoon!!!! It was an epic snow shower for all of about 30 seconds leaving a massive volume of the stuff, but it went in about 5 minutes
Never mind, I'll make some more on Sunday
I love my Snow Machine that i've hired for the School Show Shame Snow Fluid is around £34 a bottle That is the only snow I want to see between now and Monday 6th December please, snow that I make and control how its made and when and doesn't stop me getting to work or the public getting to our show!
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Snake Bites
Striking Snake Decoration
You may or may not be a snake charmer but one thing is certain - you will charm and captivate guests with this realistic Striking Snake decoration. The snake strikes out at anyone who is near, flashing light-up eyes as it emits hissing snake sounds. Spectacular!
Vampire Bite Makeup Kit
Make Up Tips Count Dracula strikes again, and with this Vampire Bite Makeup Kit, you play his latest victim. This high-grade, latex prosthetic comes with simple adhesive and remover… even suggestions on how to use your own make-up to dramatize the effect. The perfect vampire costume is only a cape…
Snake Necklace
Accessorize your Medusa costume perfectly with the Snake Necklace. This silver chain features a pewter charm of two twisted snakes.
Snake Earrings
Slither into Halloween when you wear the Snake Earrings. Perfect for a Medusa or any other kind of slippery, snake-like costume, these pewter earrings are an excellent addition to your look.
Snake Bracelet
Enigmatic, entrancing and hypnotic, this bendable golden snake bracelet is one versatile Halloween accessory. Able to wrap around any extremity, the shimmering reptile is also an amazingly alluring accent as an anklet, headband or necklace. The perfect accessory for a Cleopatra costume or a disco…
Snake Earrings
Add a spooky and somewhat sinister touch to your costume with these antique silver finish Snake earrings and conjure up some Halloween fun.
Wrap Around Snake Earring
Add a slither of silver to your ear when you wear this Wrap Around Snake Earring. Shiny, silver twirling garden snake wraps around the upper curve of your ear and pins at the earlobe with a pointed tail closure.
Snake Toilet Topper
Snakes - I hate snakes! They'll think twice before they take a seat and be flush with fear at the sight of this spooky Snake Toilet Topper. Sneak up on them with this clever decoration.
Snake Charmer Adult Costume
Charm the pants off of anyone in this silly Snake Charmer adult costume! This funny costume comes with Arabian-style red tunic, matching head scarf, sand-colored vest and baggy pants with strategically-placed snake and attached flute. The snake moves as you move the flute, giving off a charming…
Latex Cobra Snake Decoration
Whether as a beastly Halloween decoration or for completing the ideal snake charmer costume or wizard costume, this detailed, life-like latex cobra is very, very scary! This great Halloween prop is sure to cause some shrieks from unsuspecting visitors.
Just One Bite Adult Womens Costume
Just one look is all it takes to know that this Just One Bite adult womens costume is one sexy number! The elaborately detailed blood-red and jet-black floor-length dress of this vampire costume features a stunning thigh high slit that will keep everyone on their toes.
Love at First Bite Adult Wig
In the twilight hours he will come to steal your heart. Break hearts and win love in this sexy Romeo of the Night wig.
The Walking Dead Beware I Bite V-Neck T-Shirt
Give your friends a fair warning when you wear the officially licensed The Walking Dead Beware I Bite V-Neck T-Shirt. This black, cotton t-shirt features a v-neck cut along with white, red and black lettering and graphics.
GI Joe Snake Eyes Muscle Child Costume
This G.I. Joe Snake Eyes Muscle child costume will speak volumes about your stealth, surveillance and martial arts skills. The black character jumpsuit features muscle chest and arms, attached knee pads, hood and a mask.
G.I. Joe Snake Eye Deluxe Child's Gloves
Add an extra element of stealth when you conceal your identity as Snake Eyes - complete your costume with these officially licensed deluxe GI Joe Snake Eyes child's gloves.
G.I. Joe Snake Eyes Light Up Muscle Child Costume
Show them yourstealth, surveillance and martial arts skills when you wear this officially licensed G.I. Joe Snake-Eyes Light-Up Muscle child costume. The black character jumpsuit features muscle torso and arms, attached knee pads and a fiber optic light-up logo along with a fabric hood and mask.
G.I. Joe Cobra Snake Eyes Deluxe Child Costume
Speak volumes on Halloween when you wear this officially licensed G.I. Joe Cobra Snake Eyes deluxe child costume. Your stealth, surveillance and martial arts skills will shine in this black jumpsuit complete with muscle torso and arms along with a hood and visor.
Medusa Bust with Green LED's & Moving Snake
Beware Medusa! She will turn you into stone with her glowing green LED eyes and haunting green mouth. The snakes actually moves on her head as she utters unspeakable sounds and scary noises. The Medusa Bust is for indoor use only.
Everlasting Kiss Appliance
Someone got you good. The Everlasting Kiss Appliance features two deep vampire bites. Whether you're a victim or transforming into a full-fledged vampire, you'll need these deep bites to go with your costume (sold separately).
Amy Brown I Like to Bite! Teen Costume
Bring the fantasy artwork of Amy Brown to life in this whimsical I Like to Bite! teen costume and discover your mischievous side. The black, white and blue, 100% polyester dress comes with belt, headpiece, wings, arm gauntlets and temporary tattoo, allowing you to embody the extraordinary drawings…
Fanged Skull Gauze Mask
Reality bites - and if this skull was real the bite would be truly fearsome. The Fanged Skull gauze mask is the skeletal remains of a horrifyingly evil creature - the fangs in the mouth are bad enough but check out the forehead - scary!
Medusa Womens Costume
Be Queen of the Snakes in the Medusa Women's Costume. This long dress featuring a reptilian print and a train reminiscent of a snake's slithery tail adds a sultry flair but the elaborate headpiece decorated by a bronze snakes will cause serious envy.
Medusa Masquerade Mask
Slither into any party in the Medusa Masquerade Mask. Mystify as the Queen of Snakes, Medusa, in this gold mask featuring snake details.
Reel F/X™ Chomped Makeup Kit
…their dinner upon catching sight of you after you use this Reel F/X™ Chomped Makeup Kit. Why? You'll look as if a zombie had just ripped a meaty bite out of your neck! This kit includes latex prosthetics, adhesives, and all the fake blood that you'll need to create a look so realistically gruesome…


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Permaculture Sydney North
is a non-profit group based in Sydney, Australia.
Our members have a huge range of skills in self reliance, permaculture design, teaching and community development - and we have a lot of fun doing it!
joining Permaculture Sydney North
, you are connecting with a network of passionate and active people who care about big picture problems, and who are taking action at the local level through projects, education and advocacy.
In addition, your membership will give you access to over over 50 free workshops and educational events a year, including permabees, living skills workshops, Seedsavers workshops and guest speaker events.
Members also pay less
for PSN courses including Permaculture Design Courses (PDCs), Permaculture Introduction courses, sustainable property tours, specialist workshops (such as seasonal kitchen garden courses and compost tea workshops).
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Synthia Saint James
World renowned and celebrated artist, author and architectural designer Synthia SAINT JAMES is also a popular keynote speaker and presenter. With a client base that includes corporations, schools, universities, museums, non-profit organizations and special event coordinators, Ms SAINT JAMES has spoken for Neutrogena, University of Southern California, Natural History Museum, International Reading Association and the National Geographic Society. Ms. SAINT JAMES will be the first painter to receive the prestigious Trumpet Award, on January 30, 2010 at the 18th Annual Awards Ceremony, which will be televised in April in eighteen countries. In 2010 she will also be inducted into The Hall of Fame of the National Association of Women Business Owners, and she will receive her first Honorary Doctorate Degree from Saint Augustine's College.
One of her many past honors include the History Maker Award for designing the first Kwanzaa Stamp for the U.S. Postal Service. She is currently featured in the award winning documentary film
"The Black Candle" by M.K. Asante, Jr. which is narrated by Dr. Maya Angelou, and she is also one of the featured cast in "Breast Cancer Examined: An African American Perspective" a documentary that debuted on the TV ONE Network in October 2009. She also serves as a ambassador for Susan G. Komen for the Cure.
Barnes & Noble celebrated Black History Month 2009 by featuring her art on merchandise in their 800 stores nationwide and on their website to sell out audiences, and will do so again in 2010. Synthia SAINT JAMES, international award winning artist and designer of the first United States Postal Stamp for the Kwanzaa holiday, has to date written and or illustrated 13 children's picture books, 3 poetry and prose books, 4 children's activity books, a cookbook, and a postcard book.
She is the recipient of The 2008 Woman of the Year Award for the 26th Senate District, and she has garnered numerous other awards including a Parent's Choice Silver Honor, a Coretta Scott King Award, and an Oppenheim Gold Award all for her books.Copyright © 2014, Orlando Sentinel


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In Venezuela, CI and Givaudan are working with communities to ethically source the popular fragrance ingredient.
Category Archives: Partnerships
Costa Rica Leading the Way in Incentivizing Protection of Nature
In the last 25 years, the country has tripled its GDP while doubling the size of its forests.
Continue reading "Costa Rica Leading the Way in Incentivizing Protection of Nature"
Linking Freshwater Conservation and Human Health
Since 1990, more than 2 billion people have gained access to an improved source of drinking water. But more needs to be done.
Continue reading "Linking Freshwater Conservation and Human Health"
Half of Nature's Most Important Sites Remain Unprotected
National governments recently pledged to increase global coverage of protected areas. Now it's time for action.
Continue reading "Half of Nature's Most Important Sites Remain Unprotected"
New Research Helps Starbucks Improve Ethical Coffee Sourcing
Three years of data indicate that the sustainable coffee farming practices developed by CI and Starbucks are working.
Continue reading "New Research Helps Starbucks Improve Ethical Coffee Sourcing"
A Sea Change in Ocean Conservation
Corporations and governments are beginning to realize the central role of oceans in economic growth.
Promoting Gender Equality through Conservation
This International Women's Day, learn how environmental issues impact women — and how they're taking action.
Continue reading "Promoting Gender Equality through Conservation"
Why Africa Needs Agricultural Monitoring: One Kenyan's View
Unless we invest in sustainability, increasing crop yields will not guarantee long-term gains for smallholder farmers.
Continue reading "Why Africa Needs Agricultural Monitoring: One Kenyan's View"
Documenting the Deep
Photographer Brian Skerry faces a new challenge: using remotely operated cameras to document an extinct underwater volcano.
To Reach Seamount Expedition, the Ride of a Lifetime
CI's Greg Stone missed the boat to Cocos Island — but he has to get there somehow.
Continue reading "To Reach Seamount Expedition, the Ride of a Lifetime"


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AJCU Statement on Reauthorization of the Higher Education Act
Thursday, November 20, 2014
This afternoon, Senator Tom Harkin (D-IA) introduced a bill to reauthorize the Higher Education Act (HEA). On behalf of its twenty-eight members, AJCU appreciates Senator Harkin's support and preservation of campus-based aid programs in the new bill.
Thursday, November 13, 2014
Wednesday, November 12, 2014
Friday, November 07, 2014


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Originally published Friday, December 20, 2013 at 6:41 PM
Jahi McMath's family won a court order Friday to keep the girl on a ventilator to help her breathe while another medical opinion is sought.
The Associated Press
OAKLAND, Calif. — A judge Friday ordered a California hospital to keep an Oakland girl who had been declared brain dead on life support. She was declared dead after what was supposed to have been a routine tonsillectomy.
The ruling by Superior Court Judge Evelio Grillo came as the girl's family and Children's Hospital Oakland officials agreed to get together and choose a neurologist to further examine Jahi McMath, 13, and determine her condition. The judge scheduled a hearing Monday to appoint a physician.
The girl's family sought the court order to keep McMath on a ventilator to help her breathe while another medical opinion is sought. The judge also ordered that the hospital continue giving the girl IV fluids.
The family says doctors at Children's Hospital Oakland wanted to disconnect life support after doctors declared the girl brain dead Dec. 12.
After her daughter underwent a supposedly routine tonsillectomy and was moved to a recovery room, Nailah Winkfield began to fear something was going wrong.
Her daughter was sitting up in bed, her hospital gown bloody, and holding a pink cup full of blood.
"Is this normal?" Winkfield said she repeatedly asked nurses.
Despite hospital employees' efforts to help her, McMath kept bleeding profusely, then went into cardiac arrest, her mother said.
Hospital officials said they couldn't discuss the case because the family hasn't given them permission to do so.
In an interview at Children's Hospital Oakland late Thursday, Winkfield described what happened after her daughter had tonsil-removal surgery to help with her sleep apnea.
She said that even before the surgery, her daughter had expressed fears she wouldn't wake up after the operation. To everyone's relief, she appeared alert, was talking and even ate a Popsicle afterward.
But about a half-hour later, she began bleeding from her mouth and nose despite efforts by hospital staff and her family.
Family members said there were containers of McMath's blood in the room, and hospital staff members were providing transfusions to counteract the blood loss.
"I don't know what a tonsillectomy is supposed to look like after you have it, but that blood was un-normal for anything," Winkfield said.
Relatives said hospital officials told them in a meeting Thursday that they want to take the girl off life support quickly.
"I just looked at the doctor to his face and I told him you better not touch her," Winkfield said.
The family filed a request Friday for a temporary-restraining order prohibiting the hospital from taking McMath off life support or any other current treatment.
At the hearing later, the hospital's attorney, Doug Straus, said two doctors unaffiliated with the hospital examined McMath and concluded she was brain dead. But he said, "We're happy to cooperate with the judge's suggestion that an independent expert be provided to confirm yet again that brain death is the outcome that has occurred here."
The family's attorney, Christopher Dolan, said the family wanted independent tests.
Hospitals do a barrage of tests to determine brain death, said Dr. Cristobal Barrios, an associate professor and a trauma and critical-care surgeon at the University of California, Irvine. He is not involved in McMath's care and spoke about general hospital protocols.
The tests include touching a patient's cornea to elicit a blink, moving a breathing tube to stimulate a gag reflex, tickling the back of the throat to bring on a cough, and applying pressure or pain.
If the patient fails to respond to all of those tests, doctors remove the breathing tube for a few minutes. If there is any brain activity, the patient should begin breathing within a few minutes, he said.
In some cases, doctors will also draw a blood sample, add radioactive tags and re-inject it into the body to track where it flows. If the blood doesn't flow to the brain, Barrios said, there is no brain activity.
Generally, two teams of specialists must run the tests and determine independently that the patient is brain dead, he said. At UC, Irvine, those evaluations must take place 12 hours apart if the patient is a child.
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Business buzz
Published: Sunday, July 8, 2007 at 3:30 a.m.
Last Modified: Saturday, July 7, 2007 at 11:00 p.m.
n United Parcel Service recently honored driver Gary Galloway for completing 30 years without an accident.
Galloway works out of the UPS facility on Greensboro Avenue, and provides service in the Northport area.
Hocking previously was director of advancement for UAs School of Social Work, where she played a key role in helping the School of Social Work raise $1.4 million toward its $2 million campaign goal.
Before joining the UA staff, she was the regional director for Tuscaloosas American Heart Association. She has also worked in various development roles at Durham Nativity School and Duke University, both in Durham, N.C., and at the Jewish Theological Seminary in New York.
Hocking holds bachelors degrees from Columbia University and the Jewish Theological Seminary, both in New York. She also is a graduate of Leadership Tuscaloosa.
Before joining Westervelt Co., Robbins was an attorney for Phelps, Jenkins, Gibson & Fowler in Tuscaloosa.
A native of Talladega, Robbins holds a bachelors degree in finance from the University of Alabama, and a juris doctorate from the Cumberland School of Law at Samford University in Birmingham. He received a master of law degree from Levin School of Law at the University of Florida.
They are: Mike Wright, city of Tuscaloosa, president; Pamela G. Rice, Way, Ray, Shelton & Co. P.C., vice president; Marla Dare, Regions Bank, secretary-treasurer; Robert T. Burns Jr., Palmer & Burns P.C.
The team is led by Michael Warr, resident director of the Tuscaloosa office. Other team members are Alistair Harding-Smith, Scott McClanahan, Reid Holley, Martha Moore, Jen Bagley and Judee Logan.
Warr develops financial strategies for clients, with a focus on trusts, retirement and estate planning, and on coordination with client legal and tax advisors. Harding-Smith is a financial adviser focusing on investment strategies. Financial advisers McClanahan and Holley focus on small business services, working with companies and business owners in the Southeast.
The financial advisers are supported by Moore, Bagley and Logan, client associates who share responsibility for all areas of client service and administration.
Hocutt works at the Tuscaloosa office at 1300 McFarland Blvd. N.E.
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Moshe Feiglin: The Religious Jew Who Might Be A Future Israeli Prime Minister
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By Maya Shwayder | February 27, 2013 9:08 AM EST
There are no Palestinians; it's all a fake ̶ -- there is no Palestinian history or anything in Israel, said newly elected Member of the Israeli Knesset Moshe Feiglin to an assembled group of Jewish and Israeli journalists at the Chateau Steakhouse in Fresh Meadows, Queens on Monday night.
This answer was in response to a question on how Feiglin reacted when the Palestinian Authority gained recognition as a non-member observer state at the U.N. last November. "It is meaningless, what they decided," Feiglin continued. "I've heard this same decision made in the last 20 years at least three, four times."
"We can just hope that [Prime Minister Benjamin] Netanyahu will build as he says he will in Jerusalem more and more," Feiglin finished, expressing a rare moment of support for the leader of his party, Likud, with whom he has historically disagreed on several issues.
The dinner in Queens was held to celebrate Feiglin's election to the Knesset, a feat many years in the making, beginning in 1995 with Feiglin's founding of Manhigut Yehudit, whose name in Hebrew means Jewish Leadership. The goal of Manhigut Yehudit is to "return the country to the people and lead the State of Israel through authentic Jewish values."
Feiglin is still the leader of Manhigut Yehudit, despite having been invited to join the Likud party in 2005.
One of Feiglin's main campaign points was making a distinction between Jews and Israelis. "We need a leadership that believes in God and fears God," Feiglin emphasized at the pre-dinner press conference. "Not established in 100 years of Zionism, but 4,000 years of Judaism. Israel needs a new identity."
The restaurant was packed to the brim with Feiglin's supporters, almost all of whom were Jewish ranging from reformed to the black-hatted, impressively-bearded Orthodox, and several of whom were declared supporters of Ron and Rand Paul. Bernie Quigley, a reporter for The Hill who wrote an article favorably comparing the policies of Ron Paul and Feiglin, was particularly well received by Feiglin's team. Prior to the press conference, two supporters engaged in a discussion about how the US government purposefully bankrupted the educational program "Hooked On Phonics" in order to dumb down the American populace.
Tall and thin, with a short beard and dark blue eyes, Feiglin spent most of the evening talking about his vision for the future of Likud and Israel. This future, of course, includes possibly his own Premiership.
"I've never hid the reason why I came to politics to begin with," said Feiglin, who is an avid detractor of the Oslo accords, and also advocates for revoking the citizenship of Israeli Arabs.
Of the current government, Feiglin had few kind words for Netanyahu's recent decision to include left-wing leader Tzipi Livni in the still-forming coalition government. "I'm sure you understand I oppose these acts," he said, referring to the demolitions of Israeli settlements in the West Bank. Livni is a known supporter of the two-state solution peace process and is slated to become the next Minister of Justice. Feiglin is a declared annexationist.
"When I am Prime Minister, God willing, Tzipi Livni will not be in my government," he declared.
"When the time comes and there are primaries, I will be there," Feiglin promised his assembled supporters.
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John Cena
WWE Superstar
This is the only known time the Ultimate Warrior was pinned clean during his WWF Career. The match was broadcasted on Italian TV on RAI. The match was held in Cesena, nearby Grenoble in France, so it was probably a treat to Andre the Giant for his hometown crowd.
Date for the match is presumably on April 15, 1988.
Watch the clip here:
In a classic SmackDown moment from December 13, 2001, "Stone Cold" Steve Austin and Booker T brawl inside a grocery store.
Destiny Wrestlin presents The Good, The Bad, and The Ladders
This week's ClickWrestle Match of the Week is Alissa Flash vs. Chik Tormenta from July 17, 2014.
WWE Superstar
Pro Wrestling Legend
WCW and TNA Legend
Destiny Wrestlin presents The Good, The Bad, and The Ladders


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Congratulations to Airborne1, for being the winner, chosen by the members for the Fathers Day Photo Contest.ImageUploadedByTapatalk1404506533.620427.jpg
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Thank you everyone! I think that's the best thing I have won in a lot of years!
And that's including lotto tickets, which I don't buy much of.
"The remedy for evil men is not the abrogation of the rights of law abiding citizens. The remedy for evil men is the gallows." Thomas Jefferson


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Originally written on Fox Sports Southwest | Last updated 11/10/14
Divorce can be tough to deal with for some. For Deion Sanders, it was a cause for celebration. The Pro Football Hall of Famer expressed his relief on Twitter after Pilar Sanders officially became his ex-wife on Friday. Thank God Thank God! This 2 year Drama filled divorce is over. Prenup stood, Custody of All kids,pay yo own fees! God is Faithful! Truth DeionSanders (@DeionSanders) June 28, 2013 He also had some words of advice for his fellow man. Men Listen closely! Don't choose a woman with your Flesh choose her with your Spirit & Heart. Yo flesh will Lie until yo flesh die. Truth DeionSanders (@DeionSanders) June 28, 2013
Original Story: http://www.foxsportssouthwest.com/sto...
PLAYERS: Deion Sanders
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"No we're not, you're all losers!"
"No YOU'RE a loser!"
"Shut up! Both of you! You're bad for business!"
This Conversation Between a 13-Year-Old Coming Out to His ...
The Origin of Millipedes and Centipedes
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A Burglar Must Flee From the Most Vicious Attack Dog Ever ...
The Worst Roommates
Guardians of The Central Perk
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@SteeliteUK 22/11/2014
#@steeliteuk we look forward to welcoming you from tomorrow at Horeca 14 Gent http://t.co/G87e0eQ6M0
The Craft range has an earthenware rustic style and pottery feel that inspires my natural, no gimmicks dish presentation.
Simon Hulstone, Head Chef, The Elephant Restaurant, Torquay
Steelite plates make my food pop like no other! They have changed the way that chefs plate food.
Chef Michael Symon Owner & Chef, Lola & Lolita Restaurants
The many choices that Steelite has to offer, allows me to be very creative and takes some of the work out of the presentation of the food
Todd Clarmo Executive Chef, Trump International Hotel & Tower
Steelite combines style, elegance, and functionality with a unique and contemporary design all of its own.
Akira Back Executive Chef, Yellowtail Japanese Restaurant and Lounge


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Presentation Summary : Minor Bleeding. A cut or scrape that can be treated with a bandage. Follow these steps: - Rinse wound with soap and water - Apply anti-septic ointment
Source : http://www.garnetvalleyschools.com/cms/lib02/PA01000401/Centricity/Domain/669/First%20Aid%20-%20Bleeding%20ppt.pptx
First Aid Lecture: Bleeding and Shock - Foothill Technology ... PPT
Presentation Summary : First Aid Lecture:Bleeding and Shock. Blood Loss. Shock: (hypoperfusion) Circulatory failure. Inadequate supply of O 2 blood to organs, especially brain and heart .
Source : http://www.foothilltech.org/mshibuya/MedTechppts/Bleeding%20and%20Shock.pptx
Basic First Aid - University of Wisconsin-Eau Claire PPT
Presentation Summary : Clean only after bleeding has stopped Basic First Aid for Wounds Cont. Wounds Care Remove small objects that do not flush out by irrigation with sterile tweezers.
Source : http://www.uwec.edu/Facmgt/safety/upload/BasicFirstAid.ppt
Bleeding and wounds - NH-TEMS PPT
Presentation Summary : Bleeding and wounds Dan Olesnicky, MD Tactical Physician Basic Trauma First thing first Remember ABC Airway If you stop moving air, nothing else matters.
Source : http://www.nh-tems.com/documents/Files/Bleeding_and_wounds_for_Clifton_PD.ppt
Bleeding Control - Fort Drum PPT
Presentation Summary : Bleeding Control (Cont'd) The leading cause of Death on the battlefield is uncontrolled extremity ... The Field First Aid dressing is still in the system as well.
Source : http://www.drum.army.mil/tenants/Documents/IRT%20Combat%20Life%20Saver%20Module%205.ppt
First Aid - United States Mine Rescue Association PPT
Presentation Summary : First Aid Basic First Aid Securing the Scene Electrical hazards Chemical hazards Noxious ... Must treat for bleeding first Do not push bones back into place ...
Source : http://www.usmra.com/repository/category/first_aid/Another_First_Aid.ppt
First Aid Of Bleeding First Aid Course Lecture No. By Dr ... PPT
Presentation Summary : First Aid Of Bleeding Varicose Vein 1- Help the victim to lie down on her back, then raise and support the injured leg as high as possible.
Source : http://uqu.edu.sa/files2/tiny_mce/plugins/filemanager/files/4280328/First%20Aid%20Of%20Bleeding%202003.ppt
Presentation Summary : Title: First Aid Author: wanda opland Last modified by: Don Roloff Created Date: 2/23/2001 2:23:14 AM Document presentation format: On-screen Show Other titles
Source : http://www.nd.gov/cte/programs/health-careers/ppt/first-aid.ppt
FIRST AID, CPR, AND PERSONAL SAFETY - Sheridan College PPT
Presentation Summary : First Aid, CPR & Safety for the ... VI Choking Control VII Secondary Survey VIII Bleeding Control IX Wounds X Burns XI PSD Injuries XII Shock XIII Medical Emergencies ...
Source : http://www.sheridan.edu/site/assetlibrary/nwccd/offices/msha/First%20Aid.ppt
FIRST AID AND HEALTH - United States Navy PPT
Presentation Summary : FIRST AID AND HEALTH What is the purpose of first aid? Emergency care for the sick or injured. Main objectives of first aid are: Safe life, prevent further injury ...
Source : http://www.med.navy.mil/sites/nmcp/EduTrain/hmtraining/Documents/FIRST%20AID%20AND%20HEALTH%20PO%201%202%203%20.ppt
Basic First Aid - PersianGIG PPT
Presentation Summary : Basic Principles of First Aid Chain of Survival Securing ... Must treat for bleeding first Do not push bones back into place Don't straighten break Treat the way ...
Source : http://msds3.persiangig.com/document/first%20aid.ppt
Chapter 16 - Delmar - Cengage Learning PPT
Presentation Summary : Chapter 16 First Aid 16:1 Providing First Aid Immediate care given to the victim of an accident or illness to minimize the effect of injury or illness until experts ...
Source : http://www.delmarlearning.com/companions/content/141803021X/ppt/Simmers_DHO_Chapter16.ppt
Welcome to First Aid Skills - Royal Rangers South Central East PPT
Presentation Summary : Welcome to First Aid Skills Discovery Ranger Workbook Pages 195-209 Leaders Red Merit Reference Pages 169 - 199 Lesson Two Lesson Three Lesson Four
Source : http://www.rrangersce.org/images/First_Aid_Skills_revised_Jun06.ppt
First Aid Awareness - University of California | Office of ... PPT
Presentation Summary : First Aid Awareness First Aid Safety Meeting Topic Use of UCOP first aid kits General awareness on what to do if: You have minor injuries; Co-workers or family ...
Source : http://www.ucop.edu/risk-services/_files/bsas/safetymeetings/firstaid_awareness.ppt
Unit 15 First Aid - Cengage Learning PPT
Presentation Summary : Unit 15 First Aid 15:1 Providing First Aid Immediate care given to the victim of an accident or illness to minimize the effect of injury or illness until experts can ...
Source : http://www.delmarlearning.com/companions/content/1401814565/ppt/Unit15.ppt
First Aid - Public Schools of Robeson County / Overview PPT
Presentation Summary : First Aid Principles of Providing First Aid Immediate care that is provided to the victim of injury or illness to minimize the adverse effects until experts take over.
Source : http://www.robeson.k12.nc.us/cms/lib6/NC01000307/Centricity/Domain/550/First_Aid.ppt
Medical Emergencies and First Aid - McGraw-Hill Education PPT
Presentation Summary : Medical Emergencies and First Aid PowerPoint ... or vomiting Severe head injuries – contusions, fractures, and intracranial bleeding May requires immediate ...
Source : http://highered.mheducation.com/sites/dl/free/0073520837/589017/Chapter_43_Medical_Emergencies_and_First_Aid.ppt
First Aid - Florida Association for Pupil Transportation PPT
Presentation Summary : UNIT X FIRST AID TRAINING FOR THE SCHOOL BUS OPERATOR Topics to be discussed: Basic Principles First aid procedures apply only to immediate temporary needs.
Source : http://faptflorida.org/BSBOC/2A-Units-PowerPoints/10-First%20Aid.ppt
Basic First Aid - Middle Georgia State College PPT
Presentation Summary : Basic First Aid for Medical Emergencies Slide Show Notes When a serious injury occurs, you have to think and act quickly. Medical assistance may be only minutes away ...
Source : http://www.mga.edu/risk-management/docs/safety-powerpoints/Basic_First_Aid.ppt
Bleeding And Shock - Arkansas State University PPT
Presentation Summary : Sources of External Bleeding Arteries Veins Capillaries Arterial Bleeding Most serious / arteries are usually deep in the body Rapid and profuse blood loss Bright red ...
Source : http://www.clt.astate.edu/hadams/First%20Aid/Bleeding%20and%20Wounds%20-4.PPT
Bleeding and Shock - British Red Cross PPT
Presentation Summary : Title: Bleeding and Shock Author: M J Malcolm Last modified by: BRCS Created Date: 8/14/2006 1:45:47 PM Document presentation format: On-screen Show
Source : http://www.redcross.org.uk/What-we-do/Teaching-resources/Lesson-plans/~/media/BritishRedCross/Documents/What%20we%20do/First%20aid/Life%20Live%20It/First%20aid%20basics%202%20ppt.ppt
First Aid Awareness - Arizona National Guard PPT
Presentation Summary : What is First Aid: First Aid is the assistance or treatment given to a casualty for any injury or sudden illness before the arrival of an ambulance or qualified ...
Source : http://www.azguard.gov/AZAASF1/quizstar/first%20and%20self%20aid.ppt
FIRST AID BASICS - Fullerton College Staff Web Pages PPT
Presentation Summary : FIRST AID BASICS Everyone should know how to: 1. Recognize injuries 2. Control bleeding 3. Know how to care for burns 4. Care for muscle, bone and joint injuries 5.
Source : http://staffwww.fullcoll.edu/tmagrann/First%20Aid%20Basics.pps


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NEW YORK — The Boston Marathon bombers were headed for New York's Times Square to blow up the rest of their explosives, authorities said Thursday, in what they portrayed as a chilling, spur-of-the-moment scheme that fell apart when the brothers realized the car they had hijacked was low on gas.
"New York City was next on their list of targets," Mayor Michael Bloomberg said.
WASHINGTON — Senate Republicans backed by a small band of rural-state Democrats scuttled the most far-reaching gun control legislation in two decades Wednesday, rejecting tighter background checks for buyers and a ban on assault weapons as they spurned pleas from families of victims of last winter's school massacre in Newtown, Conn.
This has been the dominant issue all session, and changes made in the House could either seal the deal or upend a fragile coalition of support in the Senate.
MONTPELIER, Vt. — It's known in northern New England as the fifth season: mud.
But the time of year when the thawing winter landscape turns dirt roads into mucky seas and paved highways into frosty roller coasters sprinkled with potholes doesn't get featured on tourist calendars.
Every place with a snowy winter has its own version, but mud season occupies a special place in northern New England. It's the ugly mirror image to the picture-perfect foliage of September and October that draws millions to look at mountains painted red and gold.
KABUL, Afghanistan — A fierce battle between U.S.-backed Afghan forces and Taliban militants in a remote corner of eastern Afghanistan left nearly 20 people dead, including 11 Afghan children killed in an airstrike and an American civilian adviser, officials said Sunday.
Honey Bee Anderson, broker of Powell Realty Inc. has every right to be proud in the successfulness of their local real estate company and their licensees.
After all, for Honey Bee, business is a family matter.
Honey Bee's mother, Janie Bee Powell, founded Powell Realty in the 1982. At 90+ years old, Janie Bee has passed the title of broker on to her daughter, but she remains the company's owner — as well as a licensed real estate agent in her own right.
Many who call Juneau home are drawn to this rainforest paradise because of its natural beauty and bounty' and that's why Dr. Kristin Cox, ND is here. It only makes sense that there might be a draw for natural remedies to what ails us. Cox set up Rainforest Naturopathic Medicine in Juneau in 2002.
PARIS — New results from looking at the split-second after the Big Bang indicate the universe is 80 million years older than previously thought and provide ancient evidence supporting core concepts about the cosmos — how it began, what it's made of and where it's going.
WASHINGTON — Here comes the sequester: big federal spending cuts and a new season of economic uncertainty for a nation still trying to shake off a recession.
The politics of sequestration have been fierce, the finger-pointing incessant. And to no one's surprise, what was designed as a way out of one Washington standoff has produced another one — and more. A week out from the March 1 deadline, there are no meaningful efforts in Washington to avert the punishing automatic cuts set out in a law nearly two years ago.
The Empire incorrectly reported Feb. 14 that the tenant living in a unit of a duplex next to one being cleaned up after a meth lab contaminated the apartment is related to a couple who were arrested for alleged drug activity. They are not related. This was reported based on misinformation provided by the Tlingit-Haida Regional Housing Authority.
Juneau Empire ©2014. All Rights Reserved.


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Town Square
Possible road rage turns into shooting
Original post made on Jul 7, 2013
Read the full story here Web Link posted Friday, July 5, 2013, 10:16 AM
Comments (1)
a resident of Atherton: other
on Jul 7, 2013 at 1:45 pm
"East Palo Alto detectives located a vehicle that might have been involved several hours later." or Several hours later . . . involved.
Editor's note: Thanks. We changed it.
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Grab a Bowl of Heaven soon in Mountain View
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Bathed in bubbles, this lilac-trimmed lovely will lull baby to sleep in no time. Crocheted with baby sport weight yarn, the afghan is made using a combination of pattern stitches, including front and back post double crochets. Original publication: Leaflet 2853 Our Best Baby Afghans
© Copyright 2014 Leisure Web. All Rights Reserved.


text: David K. Leff, Essayist, Poet, Lecturer http://davidkleff.typepad.com/home/ Discovering the commonplace world near at hand.... exploring wonders hidden in plain sight. en-US 2014-11-21T07:27:00-05:00 Chicken Farm http://davidkleff.typepad.com/home/2014/11/chicken-farm.html Leaves scuttling across a concrete floor; swirling dust motes in sunlit shafts; the dry, chalky smell of ancient barnboard mingling with sweet crankcase oil leaking from a battered, barrel-hooded pickup— now but a shadow flickering five decades in my mind's... Poems David K. Leff 2014-11-21T07:27:00-05:00 Well Wishes for Wishing Wells http://davidkleff.typepad.com/home/2014/11/well-wishes-for-wishing-wells.html Wishing wells are among the most common lawn ornaments in my corner of the world. So ubiquitous are their squat bases below small pitched roofs with a bucket sometimes hanging from a strut, that I barely noticed them until I... Journal David K. Leff 2014-11-10T07:41:00-05:00 Healing an Ecological Distaster with Tourism http://davidkleff.typepad.com/home/2014/10/healing-an-ecological-distaster-with-tourism.html Imagine an eighteenth century farm that becomes a nineteenth century ecological disaster, a twentieth century tourist attraction, and a twenty-first century symbol of nature's healing power. Enter through the long, low gift shop filled with every kind of tchotchke from... Journal David K. Leff 2014-10-28T07:38:00-04:00 November 8, 2014, Evening of the Spoken Word, Canton , CT http://davidkleff.typepad.com/home/2014/10/november-8-2014-evening-of-the-spoken-word-canton-ct.html Saturday, November 8, 7 p.m., join me and writers Christine Beck, Jonathan Gillman, Charles Lipka, Alina Hopkins and Lou Mandler for an evening of poetry, prose, and music at the Gallery on the Green in Canton. Guitarist Joel Blumert and... Lectures, Readings & Appearances David K. Leff 2014-10-20T14:02:42-04:00 Beauty and the Eats: A Tree Grows in My Affection http://davidkleff.typepad.com/home/2014/10/beauty-and-the-eats-a-tree-grows-in-my-affection.html Imagine a tree that looks as if covered with snow as May turns into June. By September, pendant red fruits as bright as Christmas ornaments presage the holiday season. In autumn it delivers New England chromatic magic, holding deep reddish-purple... Journal David K. Leff 2014-10-16T07:39:00-04:00


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DEFINITION of 'Dividend Drag '
A disadvantage of the dividend structure of unit trust exchange-traded funds (ETFs) that results from SEC rules that stipulate that passively managed ETFs cannot reinvest dividends back into the portfolio. ETFs must instead accumulate the dividends in cash and pay them to holders at periodic intervals. During periods of rising markets, the dividends would be better served being reinvested in securities rather than held in cash. This leads the ETF to lag a portfolio that would be able to reinvest.
INVESTOPEDIA EXPLAINS 'Dividend Drag '
This is a problem in a rising market, but the same SEC rule is beneficial in a declining market. Either way, this has been a problem in ETF circles, which have been pushing for the SEC to change the rules. If this happens, dividend drag will essentially disappear.
Exchange-Traded Fund - ETFA security that tracks an index, a commodity or a basket of assets ...
Unit Trust - UTAn unincorporated mutual fund structure that allows funds to ...
Passive ManagementA style of management associated with mutual and exchange-traded ...
Dividend1. A distribution of a portion of a company's earnings, decided ...
Licensed For Reinsurance OnlyA license that allows a company to engage in services related ...
Accelerated DividendSpecial dividends paid by a company ahead of an imminent change ...
Fundamental Analysis
The Perks Of Dividend Reinvestment Plans
Fundamental Analysis
Why Dividends Matter
Investing Basics
How Dividends Work For Investors
Chart Advisor
Charts To Watch As Fed Raises Rates


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The game tells the story about the adventures of a brutal and cynical hero - Russian named Max. He takes revenge on alien invaders who killed all his relatives and friends many years ago.
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March 13, 2009
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