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November 28, 2014
RENO, NV - Are you a fan of bingo and cats? The Feline Rescue of Northern Nevada is hosting Bingo Extravaganza, a fundraiser to benefit the cats living in Reno.
The fundraiser will take place on Sunday, April 6, 2014 from 3:00 p.m. until 7:00 p.m. at The Grove, located at 95 Foothill Road.
An event official says tickets can be purchased for $25. The admission price includes appetizers and early bird bingo cards.
The official says tickets must be purchased in advance.
Tickets can be purchased by visiting the Feline Rescue of Northern Nevada's website.
Prizes participants can win were donated by artists, local shops and restaurants.
The official says the grand prize is a cabin getaway.
To donate a prize to this fundraiser, e-mail firstname.lastname@example.com.
Click Here to access the online Public Inspection File
Viewers with disabilities can get assistance accessing this station's FCC Public Inspection File by contacting the station with the information listed below. Questions or concerns relating to the accessibility of the FCC's online public file system should be directed to the FCC at 888-225-5322, 888-835-5322 (TTY), or email@example.com.


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As far as I know, all my Dignan relatives, decendants of Michael who fought in the Civil War, were not professionals. I only knew Eddie and Bernard (Barney) and neither completed grade school. Looks like there is no match here except the coincidence in the two sets of brothers having the same first names.
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The White House Blog: Dr. Jill Biden
From the Archives: Earthquake in HaitiPosted byon January 12, 2012 at 2:14 PM EST
Two years ago today, a massive earthquake struck the nation of Haiti, causing catastrophic damage inside and around the capital city of Port-au-Prince. Nearly a quarter of a million lives were lost, more than 300,000 people were injured, and more than a million people were left homeless.
In the two years since the disaster, Americans have joined people from all over the world to help Haiti recover and rebuild. A U.S. Coast Guard team, a disaster assistance response team, and portions of two U.S. urban search and rescue teams were on the ground 24 hours after the earthquake. In the weeks and months that followed, one in every two American households sent contributions to Haiti. With the support of the United States and the help of partner organizations, the Haitian government has led an effort to ensure people have better access to water, food, and medical care than ever before. Many organizations remain in the country today to continue this work.
Joining Forces with NASCAR to Say Thanks to our Troops and their FamiliesPosted byon December 30, 2011 at 3:30 PM EST
Watch Joining Forces with NASCAR, here.
Joining Forces was launched earlier this year with one simple goal: Letting the men and women who serve our country – and their families -- know, as First Lady Michelle Obama says, "People care about you, they care about what you have done."
The response to this initiative has been tremendous, with individuals and organizations from across the country joining in to say "thank you" – with commitments around hiring veterans, with commitments to increase access to wellness opportunities and with invitations for our active and retired servicemen and women – and their families – to participate in special events.
Recently, the First Lady and Dr. Jill Biden joined some of those families at a NASCAR race in Miami, Florida. It was a once in a lifetime experience for everyone who was there, but as Dr. Biden points out, making a difference isn't that difficult, especially around the holidays. "Reach out to a military family and say, come on over and have dinner with us. This is the perfect time to extend an act of kindness."
Dr. Biden's Children's Holiday Party Focuses on Support for Military FamiliesPosted byon December 13, 2011 at 5:50 PM EST
The mood was merry when Dr. Jill Biden hosted a fourth-grade class from White Oaks Elementary School in Burke, Virginia at the Vice President's Residence on Monday, Dec. 12. The festive event focused on helping children understand the challenges faced by military families during the holiday season.
Dr. Biden talked to students about the importance of supporting classmates whose parents are serving in the military, particularly around the holidays. After describing her own experience as a military mom when her son, Army Major Beau Biden of the Delaware National Guard, was deployed in Iraq for a year, Dr. Biden introduced Army Colonel Rebecca Porter, who talked about the impact deployment has on military families.
The students then moved to the library where they heard from Major James Blain – the father of classmate Jimmy Blain – who is currently deployed in Afghanistan. Working with a program called United Through Reading, Major Blain read Mickey's Christmas Carol to the class, via a pre-recorded DVD. Major Blain's wife, Tina, brought their other three children – Josephine, Anna Mae and Matthew – to the event. Mrs Blaine said the recordings created through United Through Reading were an important way for families to stay in touch during deployments. When Major Blain appeared on screen, Matthew immediately called out, "Daddy! Daddy!"
As part of its support for First Lady Michelle Obama and Dr. Biden's Joining Forces Initiative, United Through Reading last week announced a pledge to double its commitment to U.S. Army and National Guard families in the next two years.
After the story, students made cards for military service members and enjoyed a surprise visit from Santa.
A White House Hanukkah CelebrationPosted byon December 9, 2011 at 3:55 PM EST
Officially, Hanukkah doesn't begin for another 11 days -- but last night, President Obama and First Lady Michelle Obama decided to kick things off a little early with a celebration of the holiday at the White House.
They were joined by Vice President Biden and Dr. Jill Biden. Supreme Court Justice Ruth Bader Ginsburg was in attendance, along with Israel's Ambassardor to the United States Michael Oren, the West Point Jewish Chapel Cadet Choir, and a large group of faith and community leaders.
Hanukkah, the President said, is "an opportunity to recognize the miracles in our own lives:"
Let's honor the sacrifices our ancestors made so that we might be here today. Let's think about those who are spending this holiday far away from home -– including members of our military who guard our freedom around the world. Let's extend a hand to those who are in need, and allow the value of tikkun olam to guide our work this holiday season.
This is also a time to be grateful for our friendships, both with each other and between our nations. And that includes, of course, our unshakeable support and commitment to the security of the nation of Israel.
Dr. Biden Meets with ONE Mom BloggersPosted byon November 16, 2011 at 11:40 AM EST
On Wednesday, October 25th, Mom Bloggers from the ONE campaign came to the White House to meet with Dr. Jill Biden, Dr. Rajiv Shah, Administrator of the United States Agency for International Development (USAID), and Gayle Smith, Special Assistant and Senior Director for Development and Democracy in the National Security Staff.
Bonded by their experiences from their recent trips to Africa, the participants spoke about the ongoing crisis in the Horn of Africa. Dr. Biden, who had recently travelled to Kenya with Administrator Shah and Smith, listened to the Mom Bloggers as they described their encounters with women and children in the troubled region. Dr. Shah highlighted specific issues and described what USAID has done to address some of these concerns. Smith urged the Mom Bloggers to continue to bring attention to the issue by talking about their experiences and helping Americans recognize that there are more commonalities than differences between us and those suffering in the Horn. For more information on the Crisis in the Horn of Africa, visit the USAID website to learn about the FWD Campaign.
Dr. Biden, Dr. Shah and Gayle Smith meet with Mom Bloggers in the Roosevelt Room, Oct. 25, 2011. (Photo by Ashita Ganguly)
Honoring Our Nation's HeroesPosted byon November 15, 2011 at 10:39 AM EST
Friday was a special day, as we paid tribute to our Nation's Veterans. My husband Joe and I attended a Veterans Day parade in Media, Pennsylvania. That evening in New York, I was honored to attend the dedication of a statue created to commemorate the United States military's response to the September 11, 2001 attacks. The 16-foot tall bronze statue entitled De Oppresso Liber ("to liberate the oppressed") – the motto of the U.S. Army Special Forces – depicts a soldier on horseback in honor of the first Special Forces unit that rode into combat in the mountains of Afghanistan shortly after 9/11. Upon completion of the 9/11 Memorial, the statue will be permanently located at the World Trade Center site.
Our veterans and their families show us every day just what words like "strength" and "courage" mean. And these special operators are no exception. Joe and I met with several of them before the dedication ceremony. I was in awe of the group – many of whom have continued to serve. And as we chatted with them, I couldn't help but think of their families too – and the fear their parents, spouses, and children must have felt watching them leave without knowing where they were going or when they would come home. I met one young woman in her early twenties who remembers her father leaving for Afghanistan for the first time in 2001. Since then, she has watched him leave for deployment countless times, and she has spent nearly half her life worrying about him. But like all military families I have met, she is fiercely proud of his service. Her father is her hero.
We must never forget the sacrifices of our troops and their families – at home and abroad. This statue serves as a reminder of the very first brave soldiers who rushed into harm's way in response to the attacks on 9/11 – and of their families, to whom Afghanistan was a dangerous unknown. On Veterans Day and every day, it is our duty to show appreciation for the service of our military community and to remember that each of us has the ability to make a difference in the life of a military family.
Dr. Jill Biden is the Second Lady of the United States.
Dr. Jill Biden Addresses the 2011 PFLAG National ConventionPosted byon November 4, 2011 at 4:47 PM EST
Earlier today, Dr. Jill Biden delivered a passionate and powerful address at the Opening Ceremony of the 2011 National Convention of Parents, Families, and Friends of Lesbians and Gays (PFLAG).
She began her remarks with an inspiring story:
I recently read an open letter written from a PFLAG father to America's youth. He wrote, "My wife and I have two sons. We think that they are the best kids in the whole world. They're very different, with very diverse personalities, talents, and interests. One of the other things that makes them different is that one is straight and one is gay. But the important thing is this: we love them equally."
At its core – it's such a simple message – "we love our sons" – both of them. But that acceptance and support can make all the difference.
And as you all know well – acceptance by those you love is the greatest acceptance of all.
At the World Series with Joining ForcesPosted byon October 24, 2011 at 4:20 PM EST
Last week, First Lady Michelle Obama and Dr. Jill Biden traveled to St. Louis for Game One of the 2011 World Series to honor the troops, veterans and their families as part of their Joining Forces initiative geared towards connecting local communities in support of military families.
Check out the video from their trip here:
Before the first pitch, the First Lady also took your questions from Twitter and Facebook on how you can say thanks and provide a helping hand for the families of service members. There are lots of ways to get involved, from sending a message of gratitude to exploring volunteer opportunities near you. Find out how you can support a military family in your community at JoiningForces.gov.
At the World Series with Joining ForcesPosted byon October 24, 2011 at 4:20 PM EST
Last week, First Lady Michelle Obama and Dr. Jill Biden traveled to St. Louis for Game One of the 2011 World Series to honor the troops, veterans and their families as part of their Joining Forces initiative geared towards connecting local communities in support of military families.
Check out the video from their trip here:
Before the first pitch, the First Lady also took your questions from Twitter and Facebook on how you can say thanks and provide a helping hand for the families of service members. There are lots of ways to get involved, from sending a message of gratitude to exploring volunteer opportunities near you. Find out how you can support a military family in your community at JoiningForces.gov.
Weekly Wrap Up: Bringing Home the TroopsPosted byon October 21, 2011 at 5:01 PM EST
Watch West Wing Week here.
What happened this week on WhiteHouse.gov:
Home for the Holidays Friday afternoon the President announced that the remaining troops in Iraq will be officially coming back home, thus ending the war in Iraq. "Over the next two months, our troops in Iraq—tens of thousands of them—will pack up their gear and board convoys for the journey home. The last American soldiers will cross the border out of Iraq—with their heads held high, proud of their success, and knowing that the American people stand united in our support for our troops. That is how America's military efforts in Iraq will end."
Road Trip President Obama embarked on a three day bus tour to spread the word about the American Jobs Act. Starting the journey in Asheville, NC and ending in North Chesterfield, VA, he also made stops in Millers Creek, NC, Jamestown, NC, Emporia, VA and Hampton, VA.The President visited schools, an airport, a military base, and a fire station along the way all of which will benefit from the American Jobs Act. On the last day of the tour, the First Lady joined the President at Joint Base Langley-Eustis announcing a commitment from the private sector to hire 25,000 veterans and military spouses. The jobs bill would put Americans back to work, upgrade our country's infrastructure, and keep teachers and emergency responders on the job.
Citizens Award Tuesday in the East Room, the President honored 13 Americans with the Citizens Medal, one of the highest honors a civilian can receive. The award is given to Americans who have "performed exemplary deeds of service for their country or their fellow citizens." The recipients chosen to receive this year's medal were nominated by the public, and then carefully selected by the White House. Click here to learn more about the recipients and to watch a video showing their reactions to the news that they'd been chosen.
"We Will Overcome" Tens of thousands came to the National Mall Sunday for the Martin Luther King Jr. Memorial Dedication. President Obama, joined by the First Family, toured the memorial and then spoke at the dedication ceremony in honor of Dr. King's work. During his speech, President Obama reminded us that the progress towards Dr. King's vision has not come easily and there is still more to do to expand opportunity and make our nation more just:"We can't be discouraged by what is. We've got to keep pushing for what ought to be, the America we ought to leave to our children, mindful that the hardships we face are nothing compared to those Dr. King and his fellow marchers faced 50 years ago, and that if we maintain our faith, in ourselves and in the possibilities of this nation, there is no challenge we cannot surmount."
MLB support U.S. Veterans As a part of their Joining Forces Initiative, the First Lady and Dr. Jill Biden traveled to St. Louis, Missouri, for Game One of the World Series to meet with military families and to recognize Major League Baseball's support of those who serve and their families. Earlier that day, the First Lady announced at Joint Base Langley-Eustis in Virginia a commitment from the private sector to hire 25,000 veterans and military spouses.
Cutting Waste As a part of the Campaign to Cut Waste, the White House recently updated the Excess Property map that uses new data to pinpoint the location and status of federal properties that agencies have targeted for closure and consolidation. Ending this waste and improving the management of the government's real estate will save hundreds of millions of taxpayer dollars.
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Beyond Green LLC, Dayton, OR 97114-8405 - Amfibi
OR 97114-8405. Phone: (503) 263-6006. Category: Wholesale Nurseries-Plants Trees and Etc. Company representatives. Steve Hottovy, Owner. Location Type.
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Steve Hottovy the Owner of Beyond Green LLC, the Nurseries-Plants Trees & Etc-Wholesale in 7194 S Barnards Rd, the Canby, the Oregon 97013.
Beyond Green LLC, Dayton, OR 97114 - (503) 864-3344
SIC Code, 5193. See all SIC 5193 in OR. # of Employees (Estimate), 12. Annual Revenue (Estimate), $2,628,000. Contact, Steve Hottovy Owner, President ...
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Steve Hottovy. Contact Title: Owner. Phone: 5038643344 (+1-503-864-3344). Fax: MSA: MSA Name: County FIPS: 71. State FIPS: ...
Beyond Green LLC: (503)864-3344, OR 97114-8405 | U.S.A. Business...
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The most important things to know when shopping for a new laptop, hybrid, or Windows tablet.
After reviewing Pixelmator for iPad, I wanted to see how it stacked up against its biggest competitors in the photo-editing category.
As long as your Mac isn't ancient, you can make the move to 64-bit Chrome. Learn how to download it and find out if your Mac has 64-bit support.
Visit your favorite websites without having to launch your browser.
Adobe Photoshop Streaming runs on a Google server instead of your PC. Remember Sun Microsystems' motto "the network is the computer"? CNET's Stephen Shankland takes a look.
iCloud Drive will store and sync your files across all of your devices. It's a good idea to learn as much as you can about it.
Users won't be able to get their hands on the company's new high-end "Made In USA" computer for a couple more months.
The software giant's latest video spot tries to spread some good cheer about its Surface Pro 3 tablet.
With the market for cloud storage services starting to get crowded, we take a look at how to get as much storage from the different providers as possible.
The launch of the Warlords of Draenor expansion has been beset by issues, including server overload and a DDoS attack.


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Intel announces new Xeon processors, demos quad-core chipPresenting at its developer forum on Tuesday, Intel Corp. announced that it will ship three new dual-core processors for servers and workstations in 2006 and also gave developers their first public view of a running quad-core processor designed for dual-processor servers.
True to expectations, company vice president Pat Gelsinger announced that "Sossaman," an ultralowpower server processor designed for server blades, storage devices and telecommunications equipment, will begin volume shipments next week. He also stated that "Dempsey" — the first server processor based on the company's "Bensley" Xeonbased platform — is on track to ship by the end of the month.
"2006 marks a year of transitions for Intel — a transition to a new process technology and a powerful new microarchitecture, along with the delivery of new platforms solving tough problems for our customers," said Gelsinger. "This year we have a lineup of enterprise platforms and technologies that will inspire developers with opportunities and excite IT managers with critical capabilities to manage costs and run their business."
In the third quarter of 2006, Gelsinger said Intel will update the Bensley platform with "Woodcrest," a processor that will further reduce power consumption by 35 percent while delivering greater than 80 percent improvement in computing performance.
The Intel exec also gave developers their first public view of a running quad-core processor, codenamed "Clovertown," for dualprocessor servers. This chip is socket -compatible with the Bensley platform and is slated to ship in early 2007. It will deliver increased processing capacity and is wellsuited for multithreaded applications, such as those used in databases, financial services and supplychain management.
Additionally, Intel offered a glimpse at its next generation Virtualization Technology for enterprise servers. The technology, which the company began to ship with processors last year, helps IT organizations streamline their infrastructure, optimize utilization, reduce total costs and improve business agility.
The next generation of virtualization, Intel Virtualization for Directed I/O, will include I/O virtualization to assign I/O devices to virtual machines, providing a more robust, higher performance platform for virtualized systems, the company said.
On Topic: General
- Best Buy slashes $100 off iPad Air 2 (from $399), $200 off MacBook Pro with CD/DVD ($899), $150 off iMacs (from $899)
- Natalie Portman rumored for troubled Steve Jobs biopic
- Judge rules Apple entitled to potential ongoing royalties from patent-infringing Samsung products
- Union pushes Apple for better treatment of campus security guards
- More secrets could come from GT Advanced bankruptcy as Apple divulges details to creditors


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I've searched many online magic stores and this website offers fair prices, and the best customer service there is. I was so happy with my purchase...Read More ->
I ordered only one item just to try them out. But the the service they was gave looks as though I had a huge purchase. Brandi and Jeff are really...Read More ->


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STAR 7- October
Boom! Huge congratulations to those that accomplished Star- and did it in record time! These Star 7s are the future leaders that set the pace […]
STARS Shining Bright!- October
Stars continued to shine in October! Congratulations for everyone that took the first steps of success by becoming Star!!!
Rizza Go, Amano Hitomi, Gilbert Reyes, Robert Balagot, Nobeoka Sachiko, Celeste Williams, Jorge […]
Top Member Enrollers- October
Homer Rabulan, Karizza & Eugenio Asper, Rizza Go, Karen Villarino, Gilbert Reyes, Edmundo Reyes, Raul Pimentel, Claudio Modillas, Felita Agbisit, Alvin Sanchez
Top Customer Enrollers- October
Michael Melendez, My Healthful Alternatives, Arlynn Casanada, Sheila Penalosa, Marie Noe, Carold Gantuangco, New You Cafe, Ellaine Queen Balo, Jennifer Blake, See Chang
Top Enrollers- Lifetime of Java Giants!
These ten individuals are the ULTIMATE Java Giants! What an amazing accomplishment from these incredible leaders! Way to lead the way for others!
Joseph Azar
Kristin Ruegge
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Complete body-off restoration in the mid 1990's, smooth running 169CID 6 cylinder with manual 3 speed transmission. Working overdrive for freeway cruising, five new... More
This is a great example of a fully restored 1947 Studebaker 3/4 Ton Truck. This 1947 has the 170ci flathead straight 6 cylinder engine... More


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Miro Magloire to Present New Chamber Ballet in Two Premieres, 2/15-16
Miro Magloire presents his New Chamber Ballet in a program of two, as yet untitled, premieres, one by Magloire and one by guest dancer/choreographer Constantine Baecher, formerly with the Royal Danish Ballet, along with Lace and Moments, both by Magloire. February 15 & 16, 8 PM in the City Center Studio 5, 130 West 56 Street.
Guest dancer/choreographer Constantine Baecher was a member of the Royal Danish Ballet from 2003 to 2012, also choreographing dances for that company and for Cross Connection Ballet in Copenhagen. A frequent guest dancer/choreographer with New Chamber Ballet, the Boston native will premiere a new trio in which he will dance with two company members.
Miro will also premiere a new dramatic duet set to music by Rececca Saunders, a young British composer living in Berlin. Among Ms. Saunders many awards are the Busoni Prize of the Berlin Academy of the Arts, the Ernst von Siemens Music Prize for composition, and the Paul Hindemith Prize as part of the Schleswig-Holstein Music Festival. For the 2009-10 season she held the post of composer-in-residence at the Staatskapelle Dresden, and in 2010 she was composer-in-residence at the Huddersfield Contemporary Music Festival.
From the repertory are two Magloire works: Lace, a women's trio, and Moments, a duet for dancer and violinist. In her review of Lace, Deborah Jowitt noted that "whenever (one dancer) is performing a short solo, the other two sit on the floor in poses that call up images from Greek friezes. Also reminiscent of antique statues: the way they stand with one arm curved over their head. Their calmness is a nice contrast to the intricacies of the solos and Berio's virtuosic Sequenza VIII for solo violin, which at times suggests an attack of gnats." (Village Voice, February 2010). Moments, while billed as a solo, is actually a duet for dancer and violinist, performing Salvatore Sciarrino's score on stage, alongside the dancer. The musician's gestures, the whispering of the strings, and the dancer's movements blend to form an intimate, rhapsodic duet for violin and dance.
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- Cast of FINDING NEVERLAND to Perform on ABC's GOOD MORNING AMERICA on Thanksgiving
- NBC to Air NATIONAL DOG SHOW PRESENTED BY PURINA, 11/27


text: Carol and I stopped in our favorite Thai restaurant this evening for an early dinner. We were greeted with familiar and friendly staff. We got to sit in a quiet corner. Carol had a wonderful egg plant curry dish while I went with two different appetizers. As always, the food was fresh, well presented and quite tasty. HIGHLY RECOMMENDED!!!!


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Penne with rapini and tuna
Prep time: 20 min | Cook time: 30 min | Servings: 8
Greens like rapini are a great addition to a hearty pasta sauce. Cooking them ahead of time helps remove some of the bitter flavour. Try this method with other greens like kale, collards and dandelion.
Recipe developed by Emily Richards, PH Ec. ©Heart and Stroke Foundation 2011.
Tip: Cook the rapini ahead of time and refrigerate it so you can make this simple recipe even quicker! Drain well and remove excess water. Let cool and store in refrigerator for up to 3 days. Try this with other greens too and start adding more to your meals.
Posted: January 2012
per serving
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A simple, yet richly flavoured dish.
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Posted 11/26/2014 07:40:48 EST
In response to ToneKing's comment: I am not trying to start a thread that incites a lot of back and forth bickering, but I am looking for people's opinions on why he is so awful with this. It seems more »
Posted 11/26/2014 04:58:18 EST
Happy Thanksgiving everyone, eat, drink and be careful!!
Posted 11/25/2014 07:20:06 EST
patriots going to win this game!!
Posted 11/25/2014 04:42:51 EST
In response to thejuice1's comment: Just noticed that. Too many imo. Play 13 weeks then do weeks 14-16 as the playoffs weeks well duh this can't be right-- or we would have players that aren't in the more »
Posted 11/25/2014 01:23:42 EST
In response to thejuice1's comment:
Just noticed that. Too many imo. Play 13 weeks then do weeks 14-16 as the playoffs weeks
Posted 11/25/2014 01:08:41 EST
Did you all notice we play the full 15 weeks before playoffs.
Posted 11/24/2014 07:55:10 EST
In response to BigPapi61's comment: From the humid outskirts of Houston. Dial in DirecTV on an LG55 Google TV. Prep is: Pat the Gnome sitting on my subwoofer. Mini Patriot's helmet above the fireplace more »
Posted 11/24/2014 06:51:53 EST
In response to NEGAME2's comment: In response to digger0862's comment: [QUOTE] In response to NEGAME2's comment: [QUOTE] patriots please This is getting tougher every week. You're picking against the more »
Posted 11/23/2014 12:05:28 EST
Damn, don't like that!
Posted 11/23/2014 07:58:08 EST
Happy Birthday ATJ--You are one of my favorites on this board. Always good conversation and never rude to others!
Posted 11/23/2014 07:53:17 EST
and now we know Brady can move out of the pocket to make plays, this to me is one of the most overlooked part of the offensive success this year.
Posted 11/23/2014 07:41:30 EST
In response to digger0862's comment: In response to NEGAME2's comment: [QUOTE] patriots please This is getting tougher every week. You're picking against the #1 defense in the NFL in yards and points more »
Posted 11/22/2014 06:20:09 EST
patriots please
Posted 11/19/2014 06:58:28 EST
In response to ccsjl's comment: Seriously - is there a more fun player to watch in the NFL? "Cancel those reservations!" Willie McGinest, Heinz field Jan 27,2002 J J Watt--can you picture them on th more »
Posted 11/19/2014 06:54:47 EST
In response to TexasPat's comment: Reggie Jackson once described himself to the NY press as "the straw that stirs the drink", regarding the NY Yankee's offense. The same holds true for Rob Gronko more »
Posted 11/18/2014 12:03:21 EST
In response to Cyberknot's comment:
Good luck this week Game. I'm glad you got to spend some time in 1st place.
Jonas Gray on the bench??!! oops!
Posted 11/18/2014 11:50:07 EST
ya'll notice I'm # ONE!!!!!! Packing my bags for the starters. p s I'm #ONE in the scoring contest AND the Keepers league!!! Just pulled ahead of Cyber (who had jonas gray 43 points) sitting on the more »
Posted 11/18/2014 11:39:38 EST
after deducting my low 13 and ghost 7--we are tied. Will be interesting to see how deducting the lowest score turns out. For some getting a low score may be the best strategy!
Posted 11/15/2014 09:31:13 EST
See, He will respond to intelligent questions.
Posted 11/14/2014 10:34:28 EST
Steelers, please
Posted 11/12/2014 05:25:48 EST
Coming to getcha this week Cyber knot!! That will put me clearly in the lead!!!
Posted 11/11/2014 05:43:53 EST
what I like is that Pats are playing tough games against winning teams--so lets see what they can do. If they are as good as I think they are they can win no matter where they play!
Posted 11/11/2014 05:24:09 EST
aces needs to thank me , gave one up for him saving my seat got Patseng!! tfb and Pateng will have a great time on the bench!! PS the boys are kind of quiet really no trash kicking a s s talk this more »
Posted 11/10/2014 05:20:32 EST
indoors in a stadium so familiar, I'll take Brady any day!!
Posted 11/09/2014 07:17:05 EST
they took him out he is p i ssed he still has his helmet on !!
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Longueuil, November 7, 2014 – In support of the resolution made at the Table de concertation de l'industrie du transport par taxi (taxi industry round table), which included the participation of the Alliance des Regroupements des usagers du transport adapté du Québec (ARUTAQ) and the Association du transport urbain du Québec (ATUQ)Know more
Longueuil, November 4, 2014 – The Association du transport urbain du Québec (ATUQ) unveiled the results of a major study on the economic impacts of its member companies that serve the largest cities in the province: Montreal, Quebec, Lévis, Laval, Longueuil, Gatineau, Trois-Rivières, Saguenay, and Sherbrooke.Know more
Longueuil, October 17, 2014 – On October 8, 9 and 10, the Longueuil agglomeration and the Réseau de transport de Longueuil (RTL) hosted the Association du transport urbain du Québec (ATUQ) annual conference.Know more
Longueuil, October 6, 2014 – The My Weekends Riding the RTL initiative, organized to encourage people in the Longueuil agglomeration to use public transit for weekend activities was a great success. There was a large turnout as residents used the Réseau de transport de Longueuil (RTL) for activities throughout the free-fare day on Sunday, September 28.Know more
Montreal, October 3, 2014 - During a press conference held in Outremont this morning, the Minister of Culture and Communications and minister responsible for the Protection and Promotion of the French language, Mrs. Hélène David, announced on behalf of the Minister of Energy and Natural Resources, Mr. Pierre Arcand, that Netlift will receive $235,500 in financial aid as part of the Technoclimat program. This government program aims to promote innovation concerning the reduction of greenhouse gas emissions.Know more
Longueuil, September 4th, 2014 – On Sunday, September 28th next, the population of the Longueuil agglomeration will be able to travel for free on the territory served by the Réseau de transport de Longueuil (RTL) during My weekends riding the RTL.Know more
Longueuil, August 29th, 2014 – The Réseau de transport de Longueuil (RTL) hybrid buses are finally ready for their entry into service. They feature the RTL colors and a new slogan VOYAGEZ VERT – AUTOBUS HYBRIDE.Know more
Longueuil, September 3rd, 2014 – The Réseau de transport de Longueuil (RTL) wishes to remind its customers and the residents of the Longueuil agglomeration due to major repair work on the tunnel's vault, the métro's Yellow line will be closed on Saturdays and Sundays, effective September 13th nextKnow more
Longueuil, August 22nd, 2014 – Called upon on a regular basis, the Réseau de Transports de Longueuil (RTL) is an important ally of the Service de sécurité incendie de l'agglomération de Longueuil (SSIAL).Know more
Longueuil, August 15th, 2014 – The Réseau de transport de Longueuil (RTL) and Pratt & Whitney Canada (P&WC) of Longueuil have reached an agreement in order to promote and improve the sustainable mobility of P&WC employees.Know more
Certain departures are earlier during morning rush hours going to the Saint-Bruno train station.Know more
Certain departures are earlier during morning rush hours going to the Saint-Bruno train station.Know more
Improved service during weekends
There will be additional service on Sundays for lines 4-10-16-17-54-88-177
Earlier departures on Sundays for the following lines:1-3-4-5-6-10-13-15-16-17-19-20-21-29-32-41-42-43-44-47-49-50- 60-61-71-73-75-81-83-88-99-132Know more
|Line 6 | from the Longueuil Terminal as well as at all bus stops along the route – on Saturday and Sunday evenings, the 2:02 a.m. departure will be at 1:59 a.m.Know more
From July 6th to 13th, 2014, the RTL will be the official carrier of the Festival international de percussions de Longueuil (FIP).Know more
In order to address time travel problems due to roadwork on Clairevue Blvd and to synchronize with the commuter train departures, the RTL wishes to inform its customers that the following departures for Line 92 will be 10 minutes earlier.Know more
Longueuil, June 26th, 2014 – The Réseau de transport de Longueuil (RTL) has decided to give a helping hand to South Shore families.Know more
Effective June 23rd, 2014: The following lines will run on the SUMMER SCHEDULE: 3 - 4 - 5 - 8 - 9 - 13 - 14 - 15 - 16 - 19 - 20 - 21 - 28 - 29 - 30 - 32 - 33 - 34 - 42 - 44 - 46 - 47 - 54 - 55 - 59 - 60 - 71 - 73 - 75 - 77 - 83 - 84 - 88 - 92 - 99 - 115 - 120 - 142 - 144 - 150 - 192 - 199 - T21 - T77 - T92
The following lines will be MODIFIED: 6 - 13 - 15 - 16 - 17 - 76 - 78 - 106 - 120 - 410 - 417Know more
The RTL wishes to inform its customers that for the National Patriots' Day, Monday, Mai 19, 2014, the schedule for that day will follow Saturday's schedule.Know more
Effective Monday, April 7th, 2014, service to the following bus lines will be modified:


text:
National Sports
Diamondbacks Place OF Mark Trumbo On 15-Day DL
(CHICAGO) -- The Arizona Diamondbacks placed outfielder Mark Trumbo on the 15-day disabled list Thursday because of a stress fracture in his left foot. No timetable has been set for his return.
On the season, the 28-year-old is batting .210 with seven home runs and 19 RBI in 21 games.
The D-Backs acquired Trumbo this past off-season in a three-team trade with the Los Angeles Angels and Chicago White Sox. During his time with the Halos, he batted .250 with 95 homers and 284 RBIs in 460 games.
To fill Trumbo's spot on the roster, Arizona recalled outfielder Roger Kieschnick from Triple-A Reno.
Copyright 2014 ABC News Radio
See other NationalSports news:Louis Williams Drops 36 in Beat-down of Cavaliers
Islanders Defeat Penguins for Second Straight Night
Oklahoma's Perine Breaks Gordon's Single-Game Rushing Record
Georgia Pounds Charleston-Southern, 55-3
Ohio State Cruises Past Indiana, Clinches Big Ten Title Berth


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Certified Occupational Therapy Assistant - Bismarck Public Schools
Application deadline date: December 2, 2014
Full time itinerant certified occupational therapy assistant to serve students with disabilities PreK-12.
This is a 9 month position and follows the school calendar.
1. Must be a licensed and registered COTA or graduate of an accredited Occupational Therapy school.
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forces imparted to the skeleton during movement, as well as the effect of increased muscle mass on skeletal loading. While it is difficult to separate those two effects (Beck, 2009), suggestive evidence points to a positive association between measures of musculoskeletal fitness (especially muscle strength and power) and bone health in adults (Ashe et al., 2008; Cooper et al., 2011; von Stengel et al., 2005, 2007). Positive associations also have been reported between muscle strength and power and better quality of life, lower risk of falls and fractures, and reduced morbidity and mortality (Cooper et al., 2011; von Stengel et al., 2005, 2007). Likewise, muscle weakness has been identified as a risk factor for osteoarthritis in this population (Garber et al., 2011).
The validity of the relationships described above is further corroborated by evidence for the effect of resistance training programs on muscle strength, endurance, and power, along with changes in various health outcomes. Resistance training programs now are generally accepted as being effective at improving muscle strength, endurance, and power in both sexes, across all ages during adulthood, and for both healthy adults and those with chronic disease or disability (McCartney and Phillips, 2007; Reid and Fielding, 2012; Williams et al., 2007). These programs also have resulted in a multitude of adaptations that foster better health among adults, such as improved body composition, blood glucose and insulin regulation, systemic arterial blood pressure in prehypertensives, blood lipid and lipoprotein profiles, bone health and management of arthritic pain and disability, and prevention or improved management of the metabolic syndrome (Garber et al., 2011; McCartney and Phillips, 2007; Williams et al., 2007). Similarly, resistance training has resulted in enhanced exercise and functional capacity, improved balance, and decreased falls (Garber et al., 2011; McCartney and Phillips, 2007). Resistance training may also improve quality of life and self-efficacy and moderate levels of depression and anxiety among adults (Garber et al., 2011; McCartney and Phillips, 2007; Williams et al., 2007).
Literature Review Process
The CDC's systematic review of the literature included muscle strength and muscle endurance, but not muscle power, as components of fitness because they are the dimensions of musculoskeletal fitness that have been used most frequently in fitness test batteries. The muscle strength search screened 2,642 reports, only 63 of which satisfied the CDC search criteria for further consideration and were abstracted. Of this subset of 63 studies, 23 were classified as experimental, 22 as experimental with no control, 12 as quasi-experimental, and 6 as longitudinal.


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Photo: Instagram Wiz Khalifa's career hit a turning point in 2010 when the Pittsburgh native declined an invite to go on tour ...Read More
Vanilla Ice Doesn't Like Wiz Khalifa's Teenage Mutant Ninja Turtle Song
After Wiz Khalifa released his ode to the Teenage Mutant Ninja Turtle movie with "Shell-Shocked," many critics weren't impressed. One critic happened to be ...Read More
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text:
A long wavelength photoemitter, for example a III-V semiconductor, having a work function reduction activation layer thereon, with means for overcoming the energy barrier between the semiconductor conduction band edge and the vacuum comprising means for thermally energizing the photoexcited electrons in the conduction band from a lower energy level therein to a higher "metastable" energy level in which they may reside for a sufficient time such that the electrons can pass with high probability from the elevated energy level into the vacuum over the energy barrier. In one embodiment, promotion of electrons to this higher energy level in the conduction band results from proper selection of the semiconductor alloy with conduction band levels favoring such room temperature thermal excitation. In another embodiment, a Schottky barrier is formed between the semiconductor emitter surface and the activation layer, by means of which an internal electric field is applied to the cathode resulting in high effective electron temperature for energy level transfer analogous to the intervalley electron transfer process of the Gunn effect. In yet other embodiments, composite semiconductor bodies are fabricated in which one region may advantageously be designed for efficient absorption of long-wavelength photons, and another for efficient operation of the promotion mechanism, which together assure a high quantum efficiency. Other properties of the biased promotion layer may be used to minimize emission of electrons which have been excited by purely thermal means, thus providing a low dark current, usually considered to be incompatible with long-wavelength infrared response.
1. In a photoemitter cathode for producing electron emission into vacuum, a semiconductor body comprising a mixed III-V semiconductor compound having a photoemission surface, and an activation layer on said photoemission surface, said semiconductor compound having a composition such that said semiconductor compound is direct gap, having a direct-gap conduction band valley, but having an indirect-gap conduction band valley lying at most 0.2 eV above the bottom of the direct gap conduction band valley, said indirect-gap valley having a higher density of states than said direct gap valley, whereby electron emission is promoted from said indirect gap valley through said photoemission surface.
2. In a photoemitter cathode for producing electron emission into vacuum, a semiconductor body comprising a III-V material selected such that said material is direct gap having a direct-gap conduction band valley, but having an indirect gap conduction band valley lying above the bottom of the direct gap conduction band valley, said indirect gap valley having a higher density of states than the direct gap valley, and the bottom of said indirect gap valley being above the direct gap valley by an energy of no more than 1.5 times the energy difference between the top of the valence band and the bottom of the direct gap conduction band valley, said semiconductor body having at least a surface portion thereof having a metal forming a Schottky barrier thereon with an activation layer lying on said metal forming the Schottky barrier, and means for reverse-biasing said Schottky barrier sufficiently to produce an electric field in said surface portion sufficient to excite photo-generated electrons in said direct gap conduction band valley to an energy sufficient to permit transfer of said electrons into said indirect gap valley, to thereby promote electron emission from said indirect gap valley through said activation layer.
This application is a Continuation-in-Part of parent application Ser. No. 323,552, filed Jan. 15, 1973, now abandoned entitled "A Long Wavelength Photoemission Cathode," by Ronald L. Bell, which is assigned to the present assignee.
A substantial effort has been expended to extend the detectable wavelength of the III-V semiconductor photoemitters beyond the wavelength of about λ = 1.24μ, i.e., below 1.0 eV photon energy.
In general, there are basic limitations on the wavelength response of photoemitters, for example, the work function ε. In so-called "negative affinity" photoemitters, it has been shown that the "interfacial" barrier between the semiconductor and the activator is also an important limitation. In order to extend the detectable wavelength, such limitations must be overcome.
The most effective semiconductor photoemitters are P-type structures where the Fermi level more or less coincides with the valence band of the electrons in the bulk semiconductor. In the so-called multialkali photocathodes, the energy difference between the Fermi level at the semiconductor surface and the vacuum level, known as the work function ε, is greater than the energy difference between the valence band and the conduction band of the electrons in the semiconductor, and the energy hν of photons impinging on the semiconductor must be great enough to promote the electrons from the valence band to the higher energy conduction band and from the conduction band over the vacuum level at the surface of the semiconductor, i.e., hν > ε.
The negative affinity III-V form of semiconductor photoemitter lowers the effective ε by the well known band-bending at the electron emitting surface of the semiconductor. The bending lowers the edges of the valence band and the conduction band at the semiconductor surface relative to the band edges in the bulk semiconductor, and effectively lowers the vacuum level relative to the conduction level, decreasing the height of the barrier to the electrons seeking to escape over the vacuum level.
Since the difference between the conduction band and the vacuum level is known as electron affinity, semiconductor devices employing band-bending wherein the vacuum level has effectively been made lower than the conduction band are referred to as negative-affinity devices.
In these negative affinity devices, it is also necessary that the photon energy hν be greater than the band gap, i.e., the energy EG between the valence band and the conduction band, or
hν≧ EG
in order to obtain absorption of the photon and creation of the electron hole pairs. If the conduction level, while higher than the vacuum level so that no problem exists in having the electrons escape from the conduction level to the vacuum, is so high as to create a large bandgap, absorption of the photons and promotion of the electrons from the valence band to the conduction band does not take place and few electrons are emitted.
By proper selection of the III-V material, the bandgap EG can be lowered such that a profusion of electrons are promoted to the conduction band, but, as a result of the EG lowering, the conduction band falls below the vacuum level and the work function ε may prevent the electrons from escaping from the conduction band into the vacuum.
As a consequence of those conditions, a significant problem with electron emission from photoemitters such as III-V semiconductors is the work function ε. A considerable amount of work has been directed to lowering the work function of semiconductors; it has been shown that suitable surface activation with Cs2 O can substantially reduce the work function, to as low as 0.6 eV, i.e., corresponding approximately to photons of 2μ wavelength.
It would seem then that by selecting a III-V semiconductor with band bending and with a low EG, and by activating the surface with Cs2 O to reduce the work function, a very good long wavelength photoemitter should result. However, although such a device provides negative-affinity as desired, the junction between the III-V semiconductor and the other semiconductor material Cs2 O forms a large heterojunction barrier, and this interfacial barrier is higher than the vacuum level and the conduction band. This interfacial barrier height EB is typically about 1.15 eV and it prevents the desired long wavelength responsive photoemission. For a discussion of the interfacial barrier on III-V compounds see "Behavior of Cesium Oxide as a Low Work Function Coating" by J. Uebbing and L. James, Journal of Applied Physics, Vol. 41, No. 11, October 1970, pages 4505 to 4516, inclusive. Although some disagreement exists relative to the exact nature of this interfacial barrier as seen by reference to the articles "Long-Wavelength Photoemission From Ga1-x Inx As Alloys" by D. G. Fisher et al, Applied Physics Letters, Vol. 18, No. 9, May 1, 1971, pages 371-373, "Interfacial Barrier Effects in III-V Photoemitters" by R. Bell et al, Applied Physics Letters, Vol. 19, No. 12, Dec. 15, 1971, pages 513-515, and "Photo-electron Surface Escape Probability of (Ga, In) As : Cs-O in the 0.9 to � 1.6μ m Range," Journal of Applied Physics, Vol. 43, No. 9, September 1972, pages 3815-3823, this barrier is clearly seen to prevent the escape of electrons from the conduction band to the vacuum, and to prevent attainment of efficient long wavelength infrared photoemission from III-V compounds.
The devices previously proposed for increased photoemission at long wavelengths involve multiple layer growths, uniform large-area operation of heterojunctions, biased layers, etc. leading to problems in surface and bulk nonuniformities in the grown layers, particularly where more than one heteroepitaxial layer is to be grown. In the case of approaches relying on tunneling through thin insulator layers, non-uniformity, already a serious problem with other than the simplest unbiased III-V negative affinity system, is a dominant and disabling phenomenon.
The present invention provides a long wavelength photoemitter, for example, a negative affinity III-V type, having a work function reducing activation layer and produced by straightforward growth, fabrication, and activation procedures, the photocathode employing novel techniques for overcoming the energy barrier between the semiconductor conduction band edge and the vacuum, resulting in high, uniform sensitivity over large areas as desired for infrared photocathodes.
In the photocathodes of the present invention, the electrons in the semiconductor are first promoted by photo-excitation from the valence band into the conduction band, and the electrons are thereafter promoted by thermal energy means into higher levels in the conduction band from where they may pass over the interfacial barrier and into the vacuum. In a preferred embodiment of the invention, a simple biased Schottky barrier is employed between the semiconductor and the activation layer, and the photoexcited electrons are promoted into higher levels of the conduction band by application of a moderate electric field, this effect being the intervalley electron transfer effect responsible inter alia for the microwave Gunn effect.
In another embodiment of the invention, the semiconductor compound is chosen such that the upper conduction band or valley of the semiconductor has a relatively high density of electron energy states, as for example, the zone-edge L or X band edges, compared to the gamma minimum, such that an appreciable number of the photoexcited electron population, when thermalized at 300� K (room temperature), will be excited to the upper state, which may be as high as 0.1 to 0.2 eV above the gamma minimum. Electron emission into vacuum directly from the upper conduction band state over the surface energy barrier (work function or interfacial barrier) takes place with a significantly higher transmission efficiency (escape probability) than possible from the gamma minimum.
In other embodiments to be described below, photo-excitation may occur in one region of a composite semiconductor body and promotion to a higher conduction band in another region. The different materials of these regions may be designed to optimize their separate functions, the common requirements being that it should be possible to grow one on the other by some convenient method, for example, epitaxial growth, and that it should be possible to transfer electrons from the conduction band of the photon absorbing layer to the conduction band of the electron promotion layer. These requirements can be satisfied in the systems discussed below.
FIG. 1 is a model for a photoemitter cathode which incorporates one embodiment of the present invention.
FIG. 2 is a plot showing low energy and high energy valleys in the conduction band of a photoemitter cathode of FIG. 1.
FIG. 3 is an illustration of the band edge energy in a particular III-V compound (GaAlAsSb) utilized in one embodiment of this invention.
FIG. 4 is a model of a second form of photoemission cathode incorporating a second embodiment of the present invention and utilizing a Schottky barrier therein.
FIG. 5 is a plot of the band edge energies of a quaternary form of III-V cathode.
FIG. 6 is a plot of the satellite valley population versus electric field in a semiconductor of a type similar to that used in FIG. 4.
FIG. 7 is a band edge plot of a ternary system utilized in the cathode of FIG. 4.
FIG. 8 is a band edge plot of an InP/InGaAsP/InP cathode.
FIG. 9 is a band edge plot of a Ge/GaAs cathode.
FIG. 10 is a band edge plot of a Si/GaP cathode.
FIG. 11 is a band edge plot of a low dark current GaAs/InGaAs/InGaP cathode.
FIG. 12 is a series of band edge plots showing a technique for handling discontinuities in the conduction band edges at the heterojunction.
Referring now to FIG. 1 there is shown a model of the well known III-V semiconductor negative affinity photocathode with the interfacial barrier 11 between the III-V surface and the activation layer Cs2 O. By choosing a III-V compound with a relatively low bandgap EG, for example, 0.8 eV, a profuse number of electrons may be excited by the incoming photon energy hν from the valence band (VB) to the conduction band (CB). By band bending, the vacuum level (VL) has been reduced below the conduction band edge (CB) in the bulk semiconductor for negative affinity, and the work function ε between the Fermi level (FL) and the vacuum level (VL) has been reduced by the activation layer Cs2 O. Therefore, a low bandgap, low work function, negative affinity device is provided; however, efficient photoemission is prevented by the height EB of the interfacial barrier formed between the two semiconductor surfaces. The Uebbing and James article cited above shows this interfacial barrier height EB to be about 1.15 eV.
A very strong laser line exists at about λ = 1.06μ, or 1.17 eV, and therefore a barrier EB of such height causes the photoemissive response of the cathode represented by this model to fall off appreciably at this laser line. Reducing the EB height even slightly enables the photocathode to operate well on this laser line.
It is the purpose of the present invention to make use of thermal agitation of the photoexcited electrons in the conduction band to overcome the energy barrier, for example, the interfacial barrier, so that the electrons escape into the vacuum. In one method, the thermal energies of the photo-excited electrons are used to overcome the energy barrier. With electrons in a single system and at different energies, for example, electrons in free space, the Boltzmann distribution establishes the probability of the electrons being at a particular kinetic energy E of
p (E)� exp (-E/kT)
and, therefore, the higher the kinetic energy E, the less probability of having an electron at that higher energy. But, with a finite temperature T of 300� K, a finite probability does exist.
In the semiconductor body of the cathode, the electrons are not found in a single system, and the electrons in the conduction band are found in several different systems with different masses. The energy E versus momentum is plotted in FIG. 2 for electrons in two of the possible systems in a III-V compound, with the lowest conduction band in the III-V material having a very high curvature 12, i.e., a low mass, and therefore a low density of quantum-mechanical energy states. The other region 13 of the conduction band has a low curvature, i.e., high mass and therefore a high density of energy states. As a result, the probability relationship given above includes a density-of-states function such that
p (E) � [g (E)] exp (-E/kT)
Therefore, with one region 13 of the conduction band having a high density of states while another region 12 of the conduction band has a low density of states, the ratio of the upper band g(E) to the lower band g(E) can be relatively large. Electrons promoted into the lower energy, light mass conduction band region 12 by photoexcitation, will, because of the higher probability factor, be transported into the high state density band 13 because of the large number of energy states that will accept them. This will occur by thermal excitation provided T is finite, as for example room temperature, and provided the energy difference between the lower and higher energy conduction band regions is small enough, e.g. 3kT.
Certain III-V alloys will give the correct conduction band structure, i.e., those in which the zone-edge L and X band edges have very high energy state densities relative to the gamma minimum, and an appreciable fraction of the photoexcited population, even when thermalized at room temperature, will be found in the upper states. These upper states are as high as 0.1 to 0.2 eV above the gamma minimum, and this energy difference is significant when only a slight energy increase is needed to overcome the energy barrier as in the laser line illustration mentioned above. Thus electron emission into vacuum directly from the upper states over the heterojunction barrier takes place with a significantly higher transmission efficiency ("escape probability") than possible from the gamma minimum. Assuming parabolic band edges, at energies E1 and E2, with multiplicities g1 and g2, effective masses m1 and m2, and an absolute temperature T, the ratio of upper to lower populations is given by
N2/n1 = (g2/g1) (m2/m1)3/2 exp(E1-E2)/kT
For g2/g1 = 7, m2/m1 = 10, T = 300�K, and E2-E1 = 0.1 eV,
N2/n1 = 4.6, a satisfactorily high value.
Some loss in diffusion length can be expected because of the higher mass of the upper valley electron population, and the lower mobility. This effect is small, being proportional to the square root of the effective mass, whereas the population varies as the 3/2 power of the effective mass. Moreover, the lifetime against recombination in the upper (indirect) levels may be significantly higher than for the gamma electrons, offsetting any decrease in mobility.
The requisite band structure is realized by the quaternary III-V alloy system GaAlAsSb as illustrated in FIG. 3. It is seen that the band edge energies EX and EL are 1.35 eV and the gamma minimum is 1.1 eV for the illustrative compound
Ga0.85 Al0.15 As0.45 Sb0.55
A more preferred embodiment of the invention is shown by the model of FIG. 4 wherein a biased Schottky barrier is formed between the III-V semiconductor and the Cs2 O activation layer by a thin (100 A) silver layer on the semiconductor surface under the activation layer. Such a thin silver layer with Cs activation has been employed on cold cathode emitters; for example, see Stolte and Archer, "pn - Schottky Hybride Cold-Cathode Diode," Applied Physics Letters, Vol. 19, No. 11, Dec. 1, 1971.
As in the unbiased photocathode, the initial action is the absorption of the photon across a direct bandgap EG of, for example, 0.8eV (giving a sharp onset of optical absorption and a high α under operating conditions, conducive to efficient operation). As discussed below, it may be possible to operate with bandgaps as low as 0.46 eV, corresponding to a long wavelength cut-off of 2.7 microns. The additional energy provided to the photoexcited electrons in order for them to be emitted into vacuum relies on hot-carrier effects and intervalley electron transfer, phenomena which are the basis of the microwave Gunn effect, and are now relatively well understood. The Gunn effect and other useful microwave effects ensue when a moderately strong electric field FE -- a few kV/cm-- is applied to a semiconductor with a light-mass Γ conduction band minimum and heavy mass minima at a higher energy. Electrons in the Γ minimum gain energy from the electric field until they are energetic enough to transfer into the upper valleys. Here the mobilities are low enough and the scattering mechanisms strong enough that for the fields applied, the electron population gains no further significant energy, and ionization across the forbidden gap is prevented. The avalanching range of fields is moved to much higher values (�105 V/cm) by the presence of these higher "satellite" valleys of the conduction band. Because of the relatively high densities of states in the upper conduction band minima, a significant fraction of the photoelectrons are transferred into these upper levels; this high fractional transfer is important for the quantum efficiency and noise properties of the resulting photocathode.
In utilization of this effect, the equivalent electron effective temperatures obtained are much higher than the lattice temperature of the order of several thousand �K. As discussed above, electrons present in the conduction band can be promoted much higher up in the energy levels of the conduction band to more easily pass over the energy barrier at the surface. Alternatively, the gamma minimum for the semiconductor can be lower and still obtain promotion up to the X or L minimum to pass over the barrier, while still obtaining absorption at long wavelengths due to absorption into the gamma minimum.
In Gunn-effect devices, very large currents flow under the action of the applied electric field, whereas in the present structure the only current flowing is due to photoexcited electrons, a substantial fraction of which are emitted into vacuum. Very high photoelectron quantum efficiencies are therefore available.
The important consequences of a proper choice of band structure for the cathode are: (a) efficient absorption of the incoming photons near the surface (direct bandgap), (b) excitation of the photoelectrons to well-defined upper levels of the conduction band on applying moderate electric fields, and (c) the action of these upper levels in preventing further runaway and ionization (avalanching) of the semiconductor, before a significant fraction of the photoelectron population has been excited to the higher energy levels.
In order to apply such electric fields, the material under stress must contain few free carriers. This is achieved by compensating the material using "deep" trapping centers, or more easily by sweeping out the carriers, as in the depletion region of a back-biased pn-junction or Schottky-barrier contact. FIG. 4 illustrates the use of the depletion layer of a Schottky barrier, formed by the thin Ag overlayer on the p-type semiconductor. In this configuration, the field increases towards the surface, giving the most rapid available band-bending rate, favorable to emission, just at the surface. While this field can even rise into the higher "avalanching" range just at the surface, without serious detriment to the noise performance, the very high surface band-bending fields of the conventional negative affinity photocathode (�106 V/cm) are not used, since this gives rise to tunneling of holes from the Schottky barrier into the semiconductor and very large currents which cannot be supported by the thin Ag layer.
Avalanching in high-field devices occurs under conditions in which electrons in the conduction band can reach energies sufficient to create new electron-hole pairs across the bandgap. The relevant kinetic energy is clearly at least equal to the bandgap energy at the gamma point EG, and on a simple theory accounting for momentum conservation is at least as high as 1.5 EG. To avoid avalanching at low fields, before transfer to satellite valleys is effective, the conduction band gamma electron energies are limited to less than 1.5 EG by placing the satellite valleys at or below this energy.
These considerations, coupled with available surface barrier heights, determine the long wavelength limit of the present device in the following manner. Assuming location of the Ag Fermi level at one-third the bandgap from the valence band (Mead's one-third rule), and an Ag/Cs2 O barrier height of 1.0 eV, this surface barrier will lie at EBC = 1.0 - 2EG /3 above the conduction band edge at the surface. For emission from satellite valleys over this barrier, the height of the satellite valleys ES above the conduction band edge must be at least equal to EBC. However, there is already a limit on ES due to avalanche prevention: ES < 1.5 EG. Therefore,
1.5 EG > ES > EBC = 1.0 - 2EG /3 (eV)
from which is derived a minimum value of the bandgap
EG > 0.45 eV.
The corresponding long wavelength cut-off is 2.7 microns. Since this value is based on a number of assumptions, it is not easily met in actual cases, and the indicated limit is difficult to approach closely in practice.
A more practical approach is to operate at a bandgap EG of 0.7 eV, corresponding to a cut-off of 1.77 microns. From the one-third rule, the surface Fermi level is pinned at about 0.47 eV below the conduction band edge. The top of the Ag/Cs2 O barrier is then 1.0 eV above this, or 0.53 eV above the conduction band edge of the III-V at the surface. The band structure is therefore such as to generate L or X minima to about 0.53 eV above the bottom of the Γ minimum, or at a level 0.7 + 0.53 = 1.23 eV on the diagram of FIG. 4.
FIG. 5 illustrates the Inx Ga1-x AsY Sb1-y quaternary system suitable for use in the FIG. 4 Schottky barrier embodiment with the ternary system GaAs/InAs represented on the left and the ternary GaSb/InSb on the right. The binary end-point band structure critical points are taken from Herman et al, Vol. 8, Methods in Computational Physics, Academic Press, 1968, pages 193-250. For illustrative purposes, the higher points are joined by straight lines to represent linear variation across the ternary composition, although it is well known that the actual curves are slightly parabolic.
A bandgap at the Γ-point of 0.7 eV mentioned above is indicated by the horizontal dashed line, and the assumed barrier height of 1.25 eV by the horizontal chain-dashed line. The composition A is Ga.sub..75 In.sub..25 As, the composition B is Ga.sub..75 In.sub..25 Sb, and the composition C is a .64/.36 combination of these, or Ga.sub..75 In.sub..25 Sb.sub..64 As.sub..36. The resulting lattice constant is close to that of GaSb which is therefore a convenient substrate for epitaxial growth. The Γ minimum lies at 0.7 eV, and the L1 minima at 1.25 eV. This composition gives field-assisted, hot electron photoemission, when activated with Cs and oxygen, out to wavelengths of 1.77 microns. Although the discussion has been in terms of front-surface photoemission, GaSb is transparent to 0.7 eV radiation at reduced temperature, and the possibility of transmission operation of this photocathode is clearly apparent.
FIG. 6 shows the calculated ratio of electrons in the upper valleys of GaAs as a function of electric field from Butcher and Fawcett, Proc. Phys. Soc. 86, 1965, pages 1205 to 1219. It is clear that over 90% of the population can be transferred at reasonable fields. Similar transfer occurs in all semiconducting compounds with similar band structure to GaAs; Gunn oscillations have been observed in many of these, e.g. CdTe, InGaSb, GaAsP, InP, etc. InP is particularly relevant since the conduction band gamma to satellite valley spacing for InP is about 0.6 eV, i.e., greater than that of the quaternary system discussed here.
The ternary GaAsSb alloy series of FIG. 7 provide another suitable band structure. The gamma-point bandgaps near the mid-composition range are suitable for strong absorption of 1.06-micron radiation, and the L1 and X1 satellite valleys are at a convenient height for obtaining emission over the surface barriers. Referring to the model of FIG. 4, for a barrier of height EB, the lowest satellite valley would be at a height EX,L = EB + EG /3. Using EB = 1.0 eV as for Cs2 O on Ag, the intersection of the dashed lines on FIG. 7 (EX,L - 1.0 eV and EG /3) gives the composition of the lowest bandgap GaAsSb alloy that functions in the prescribed fashion-- about 1.0 eV.
We discuss next embodiments in which the functions of photon absorption and electron promotion are performed in separately-designated regions of a heterogeneous but continuous semiconductor body. FIG. 8 shows schematically such an arrangement. The active absorbing layer is a p-type InGaAsP quaternary layer grown lattice-matched on an InP substrate. Lattice-matched growth of this system yields a high performance 1.06-micron photocathode with excellent uniformity over large areas. The InGaAsP quaternary system with the InP lattice constant can generate bandgaps spanning the region from 1.35 eV (InP) to about 0.7 eV (In0.63 Ga0.37 As). The latter would be suitable for 1.75-micron operation. The doping of the active layer need not be as high as for an unbiased photocathode. Zinc doping of the order of 1016 -1017 /cm3 would be adequate, and would generate a correspondingly long diffusion length for this layer.
A few-micron thick (say 3 microns) lightly-doped emitter layer of InP is then grown on the quaternary. This layer is automatically lattice matched. It can be n or p-type, preferably the latter, and should be doped to less than 1015 /cm3. The device is completed by a 100-A thick metallic layer (e.g. Ag) deposited by vacuum evaporation, and activated by Cs and oxygen. This cathode would be illuminated by transmission through the InP substrate, transparent to all radiation beyond 0.9 micron.
In operation, a positive bias on the metallic contact depletes the lightly-doped InP emitter and establishes a field in it greater than 104 V/cm. For such fields, which are low compared with breakdown fields (105 - 106 V/cm), conduction electrons in InP are promoted into upper satellite valleys. These lie about 0.65 eV above the lowest central conduction band valley. FIG. 8 shows that at the surface these valleys are 1.2 eV above the Fermi level of the metal contact. The Ag-Cs2 O barrier is of the order of 1 eV as determined by J. J. Uebbing and L. W. James in Journal of Applied Physics Vol. 41, pages 4505-4516, October 1970. Electrons from the upper valleys are therefore easily emitted into the vacuum. Promotion to the upper valleys in InP is an efficient process for fields greater than 2 � 104 V/cm.
An important practical advantage of InP is the characteristically high barrier height obtained on forming a metallic Schottky barrier to p-type material (or in other words the hole barrier height when biased in the direction shown in FIG. 8). This height is typically of the order of 0.75 eV. Such a high barrier prevents the flow of current from the Schottky barrier contact into the biased layer when the bias voltage is applied, preventing current drain on the biasing source and preventing also destruction of the thin Schottky barrier metallization and overlying (Cs,O) work-function-lowering layer referred to above as the activation layer
FIG. 9 shows Ge/GaAs system analogous to the InGaAsP/InP system just described. Germanium possesses an indirect gap of 0.67 eV and a direct gap of about 0.8 eV at room temperature. The indirect gap rises to 0.7 eV at 200�K. The onset of direct absorption means that a high resolution photocathode can be fabricated for 1.5-microns wavelength, and the lower indirect gap implies that some imaging should be possible out to 1.75 microns. The lattice matched GaAs layer is doped to function as the electron promotion and hole barrier layer.
The inter-doping difficulties of growing GaAs on Ge can be minimized by use of a low-temperature transient liquid phase epitaxial technique. A cool Ge substrate is suddenly introduced into a Ga melt saturated with As. The rapid cooling of the melt by the substrate forces rapid growth of a GaAs layer on the Ge without appreciable inter-contamination. Some grading, however, would be beneficial in order to remove any heterojunction band-discontinuities.
The thermal bandgap of Ge is the limiting element determining dark current in this cathode due to a thermally-excited diffusion current of magnitude given by a well-known expression
Jd = 4(2πkT/h2)3 (me mh)3/2 (qD/Lpo) exp(-Eg /kT).
Where the symbols have their usually accepted meanings, For Ge at T = 300�K and a hole density po = 1018 /cm3, we have Jd = 10- 6 A/cm2, which is of course much too high, and indicates that all photocathodes relying on materials with bandgaps in the region of 0.67 eV or less must be cooled.
For a somewhat lower temperature of 200�K and allowing for an increase of Eg to 0.7 eV at this temperature, we have Jd = 2 + 10- 14 A/cm2, a more reasonable value for dark current. At 200�K, the thermionic emission from the Cs2 O and its interface states is negligible by comparison.
The bias current at this temperature can be computed from the thermionic emission over the hole barrier of the Schottky contact on GaAs, which is about 0.5 eV. We have
ib = 4 � 10- 7 A/cm2 at T = 200�K
ib = 10 mA/cm2 at T = 300�K.
FIG. 10 shows a similar situation with GaP grown on p-type Si. This growth can be carried out by vapor-phase methods. The resulting device will give some photoemission at 1.06 microns, which owing to the indirect Si bandgap will have a rather low efficiency-resolution product, but is of theoretical interest in that the GaP emitter can emit directly from the lowest conduction-band minimum over a Ag/Cs2 O barrier.
One of the problems with present low bandgap negative affinity photocathodes is a dark current one or more orders of magnitude too high for some applications, at room temperature. This is a consequence of a low work function, which must of course be slightly lower than the photon energy in a passive cathode. Using the biased Schottky barrier cathode, a significantly higher work function surface may be used on the biased emitter, thereby reducing the dark current to the level of the thermally-excited diffusion current from the active layer, which will be adequately low at room temperature (about 10- 15 A/cm2 for a 1018 p-doped active layer).
FIG. 11 shows GaAs/InGaAs/InGaP field assisted photoemitter. The active layer is In0.15 Ga0.85 As, some microns thick (e.g. 5 microns), grown by graded vapor phase epitaxy process on a GaAs substrate. Light will be incident through this substrate. Such growth produces material of adequate quality when suitably graded. The lattice constant of the active layer is about 5.7 A.
A depletion layer about 3 thick of lightly-doped lattice-matching InGaP (approximately In0.6 Ga0.4 P) is grown on the active layer. At the lattice constant of 5.7 A, the Γ conduction bandgap of InGaP is about 1.8 eV, and the X and L valleys lie at about 2.15 eV. Assuming a hole barrier of 0.75 eV for a surface metallic contact, the upper valley electrons have an energy in the metallic layer of 1.4 eV. They can therefore surmount a surface barrier of this magnitude, e.g. as provided by a layer of Cs over the Schottky barrier. The contribution of the metallic contact to thermionic emission is less than 10- 16 A/cm2 at 300�K. The contribution of the InGaP depletion layer, having a minimum bandgap of 1.75 eV, will be negligible (<10- 23 A/cm2) if the light doping is p-type.
Since this cathode is freed of the bandgap constraints imposed on a passive (unbiased) cathode by the surface interfacial barrier with Cs2 O, the basic absorption and transport processes are very efficient, and the ultimate cathode efficiency is determined by the transmission of the Schottky barrier, which can be high.
Yet another method for increasing the thermal energy of the electrons in the conduction level to promote them over the energy barrier employs the known optical pumping technique for pumping the electrons from the lower energy levels in the conduction band to higher levels. A source of pumping radiation illuminates the photocathode of the type shown in FIG. 1. of high intensity and of lower energy than the bandgap EG so that this pumping light does not promote electrons from the valence band to the conductance band. Because of the low cross-section for this process and the high intensity of light needed, this method of optical excitation is much less desirable than the intervalley transfer by electric field, described above.
The above discussion has ignored discontinuities in the conduction band edges at a heterojunction, which must be removed for proper operation of the two-layer embodiment. This removal can be effected by use of compositional grading combined with appropriate doping. Considering the discontinuity shown in FIG. 12 (a), improvement can be made (FIG. 12b) by n+ doping of the early growth of the whole bandgap material. 1019 -level doping accomplishes band-bending in a distance of the order of 100 A. If now the bandgap is graded (via a lattic compositional change) over the region indicated by the vertical lines in FIG. 12b, a smooth conduction band edge is obtained as shown in FIG. 12c. The natural occurrence of smooth changes of composition, rather than the fictitious step change of FIG. 12a, is a feature of liquid phase epitaxial growth, due to melt-back and regrowth on contacting a substrate with a nonequilibrium melt. In the case considered here, the rest of the emitter layer would be grown lightly p-type.
Patent Citations
Non-Patent Citations
Referenced by
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Press release from Marketwire
Brookfield Residential Properties AGM & 2012 First Quarter Results Webcast Notice
Tuesday, April 03, 2012
Brookfield Residential Properties AGM & 2012 First Quarter Results Webcast Notice09:26 EDT Tuesday, April 03, 2012CALGARY, ALBERTA--(Marketwire - April 3, 2012) - Brookfield Residential Properties Inc. (TSX:BRP)(NYSE:BRP) - Annual & Special Meeting of Shareholders 2011 First Quarter Conference Call Date:Tuesday, May 8, 2012Date:Wednesday, May 9, 2012Time:2:00 p.m. (Eastern Time)Time:1:00 p.m. (Eastern Time)Annual MeetingBrookfield Residential Properties Inc.'s Annual & Special Meeting of Shareholders will be held on Tuesday, May 8, 2012 at 2:00 p.m. (Eastern) / 11:00 a.m. (Pacific) at The Hilton Costa Mesa Hotel, 3050 Bristol Street, Costa Mesa, California 92626. If unable to attend in person, you are invited to participate in the live Webcast presentation at:http://services.choruscall.com/links/brpagm120508.html. This presentation will be archived for future reference. First Quarter Conference CallYou are invited to participate in Brookfield Residential Properties Inc. Q1/2012 Conference Call and Webcast on Wednesday, May 9, 2012 at 1:00 p.m. (Eastern) to discuss with members of senior management our results and current business initiatives.These results will be released on May 8th and will be available on our website at www.brookfieldrp.com under "News/Press Releases." The Conference Call will also be Webcast live on our website, where it will be archived for future reference. To participate in the Conference Call, please dial 1-800-319-4610, toll free in North America or 604-638-5340, at approximately 10 minutes prior to the start time. The Conference Call will also be Webcast live at http://services.choruscall.com/links/brp120509.html. For those unable to participate in the Conference Call, a taped rebroadcast will also be available until midnight June 9, 2012. To access this rebroadcast, please call 1-800-319-6413, toll free in North America or 604-638-9010 (code 1231).Brookfield Residential Properties Inc. is a North American land developer and homebuilder, active in ten principal markets with over 100,000 lots controlled. We entitle and develop land, and build homes for our own communities, as well as sell lots to third-party builders. The company is listed on the New York and Toronto Stock Exchanges under the symbol BRP. For more information, please visit our website at www.brookfieldrp.com.FOR FURTHER INFORMATION PLEASE CONTACT: please contactIf you have any questions about the Conference Call,Linda NorthwoodDirector, Investor email@example.com


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