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Vice President Operations Jobs in Illinois
725 Illinois Vice President Operations jobs found on Monster.Jobs 1 to 20 of 725
Job Description: The Vice President of Operations is responsible for the overall operational and financial aspects of an assigned market. This position is responsible for maximizing revenue and achieving outstanding operational performance while providing exceptional services and response times to our residents. This position is based in Chicago, IL. Salary: $115,000-125,000 Plus Bonus Package ...
Description: Optum payer consulting is looking to expand their offerings within their Network and Population Health pillar. The group is planning to hire a senior resource to support the expected growth of provider consulting, particularly in the areas of population health management, ACO, revenue cycle management, patient throughput, charge integrity, compliance, and patient experience. This res...
Xylem Inc. Morton Grove, IL
Job Description Xylem (XYL) is a leading global water technology provider, enabling customers to transport, treat, test and efficiently use water in public utility, residential and commercial building services, industrial and agricultural settings. The company does business in more than 150 countries through a number of market-leading product brands, and its people bring broad applications expert...
Vice President of Distribution Uline – Shipping Supply Specialists Uline is a leading North American distributor of shipping, packaging and industrial supplies. Founded in 1980, the family-owned business has experienced continuous growth over the years. Today, we employ over 3,100 bright, career-minded individuals across the U.S., Mexico and Canada. At Uline, we're energetic and passionate abou...
Recruit GAAP Staffing Chicago, IL, 60659
Recruit GAAP Staffing is search for a full time VP of Operations for a client company located in Chicago, IL area. Industry: Manufacturing. With an environment described as: Small private company, Recruit GAAP is searching for someone with the ability to perform the scope of responsibilities combined with the following skills and experience: Manage Purchasing, Inventory, Customer Service, Order Pr...
Penn National Gamin Joliet, IL
Don't just work. Work Happy. A career in gaming? Hollywood Casino Joliet we think you'll enjoy an exciting industry, fast-paced days and nights, diverse, enthusiastic co-workers, unlimited growth and support from one of the leaders in the industry. An individual could be successful if they possess the following....
Description At Walgreens, we help people get, stay and live well. That's our core purpose and the difference we make in people's lives every day. Our purpose has shaped the direction of our company since Charles R. Walgreen Sr. founded his first drugstore in 1901, and it still does today. Our team members make that purpose come to life in our more than 8,000 stores in all 50 states, the District...
Saddle Creek Corp. Elwood, IL, 60421
Location: Chicagoland Area or Dallas/Fort Worth Overview The Vice President of Operations, Midwest is responsible for the overall operational performance of assigned locations. Reporting to the Sr. Vice President of Operations, this position plays an active role in SCLS' executive leadership team. Responsibilities Drive financial and operational success in multi-site 3PL business units in an a...
Arthur J Gallagher & Co. Itasca, IL, 60143
Divisional VP, Operations & Client Services - 16848 Description Arthur J. Gallagher & Co. , one of the world's largest insurance brokers, provides a full range of retail and wholesale property/casualty (P/C) brokerage and alternative risk transfer services globally, as well as employee benefit brokerage, consulting, and actuarial services in the United States. We also offer claims and informatio...
Walgreens Deerfield, IL
At Walgreens, we help people get, stay and live well. That's our core purpose and the difference we make in people's lives every day. Our purpose has shaped the direction of our company since Charles R. Walgreen Sr. founded his first drugstore in 1901, and it still does today. Our team members make that purpose come to life in our more than 8,000 stores in all 50 states, the District of Columbia ...
Job Description Within the CIB - F&O and OTC Clearing is the internal name of JP Morgan's global exchange traded futures; options & OTC cleared brokerage business. F&O and OTC Clearing provide client's access to exchange traded listed derivatives globally. F&O acts solely as the client's agent on brokerage transactions, and never as principal. Services include: Developing trade ideas and portfol...
Description At Walgreens, we help people get, stay and live well. That's our core purpose and the difference we make in people's lives every day. Our purpose has shaped the direction of our company since Charles R. Walgreen Sr. founded his first drugstore in 1901, and it still does today. Our team members make that purpose come to life in our more than 8,000 stores in all 50 states, the District...
Fresenius Medical Care Downers Grove, IL
PURPOSE AND SCOPE: Supports FMCNA's mission, vision, core values and customer service philosophy. Reports to the General Manager (GM) and may stand in for the GM when the GM is unavailable/unable to perform his/her duties. Responsible for running and growing the FMS Group business through effective leadership and management of all aspects of the Group operations, including customer service, quali...
Aparium Hotel Group Chicago, IL, 60602
We are in search for an innovative Food and Beverage leader to guide us through a period of rapid growth. In this position, the VP, F&B Operations will develop a food and beverage strategy that aligns with our pillars of translocal hospitality, intuitive service and collaborative culture. The ideal candidate will be able to work hands on with hotel teams as well as balance his or her time working ...
The Beneva Group has recently been engaged by one of our top clients, a leading and rapidly expanding Global Enterprise Integration Firm that is actively seeking their next Vice President of Marketing. Reporting to the President, and serving as the Head of Marketing for the company, this highly integral role will be responsible for the overall marketing strategy, management and achieving marketing...
· Identify, develop, and deliver new products/product enhancements to the market. Assist trade sales to effectively position offering in the marketplace to close deals and grow the business. · In close partnership with the Global and Regional Product teams, Collaborate with North American Sales Head to execute on focused programs (e.g. Commercial Bank growth strategy). · Serve as product capabil...
· Partner with Technology and Operations to communicate product requirements and determine viable development strategies, deliverables, and release dates. · Provide oversight to key platform vendors ensuring quality and cost containment while driving speed to market. · Provide sales support for key deals requiring customization and/or product expertise across the Trade platforms. · Define proce...
The AVP, Creative Services & Production will report to the VP, Intelligence Operations and will be responsible for leading the design and editorial teams. This professional will be an integral member of the Intelligence Operations Team and will serve as a business partner to the Professional Writing and Marketing teams. This leader will develop a deep understanding of our editorial and design bran...
Job Description J.P. Morgan is a leader in financial services, offering innovative and intelligent solutions to clients in more than 100 countries with one of the most comprehensive global product platforms available. We have been helping our clients to do business and manage their wealth for more than 200 years and we keep their interests foremost in our minds at all times. This combination of p...
Fresenius Medical Care West Chicago, IL
PURPOSE AND SCOPE: Supports FMCNA's mission, vision, core values and customer service philosophy. Adheres to the FMCNA Compliance Program, including following all regulatory and FMS policy requirements. Drives and directs the FMS Group Inpatient Services business on a group scale including growing the FMS Inpatient Services programs through effective leadership and management of customer relatio...
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Executive Career Tools
Vice President
$77,250.00 - $258,070.00
Typical Salary for Vice President in Illinois
(1886 Respondents)
Source: Monster.com Careerbenchmarking Tool
Education / Training
Some College Coursework Completed
High School
(1303 Respondents)
Source: Monster.com Careerbenchmarking Tool
Vice President
Plans, directs, and/ or coordinates operational activities at the highest level of management with the help of subordinate executives and staff managers under the direction of the chief executive officer.
Rate of Growth
12.40 %
Size of Industry in 2006:
Source: Bureau of Labor Statistics, May 2006
Related Skills
Active listening
Critical Thinking
Decision Making
Related Duties
Achieves financial objectives by forecasting functional requirements; preparing an annual budget; scheduling expenditures; analyzing variances; initiating corrective actions; analyzing and recommending information and trends for senior executive decision making.
Produces employee results by implementing recruitment, selection, orientation, training, coaching, counseling, and disciplinary programs; communicating values; assigning accountabilities; planning, monitoring, and appraising job results; compensating for results.
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Ready to Listen
October 07, 2013 Length: 9:00
Fr. Ted reminds us that Christ comes to those who are in the direst need and at the most humble moment of their lives.
"By listening to you on my PC at work, some who do not believe in God, and only know what non-Orthodox people tell them are tuning in to listen to your music and prayers, as well as all the educational material you supply. I know I have learned more about my faith due to your efforts than anywhere else. Thank you for your hard work and talent that you bring to this ministry."

subset: commoncrawl


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Gaza Crisis: Palestinians Still Hoping for Truce As Ceasefire Discussions Stall
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By Gianluca Mezzofiore | November 21, 2012 10:06 PM EST
Palestinians in Gaza living under Israeli bombardment remain hopeful that a truce will be reached soon, even though discussions failed to yield a ceasefire on Tuesday night.
Israel has intensified its shelling of Gaza from air and sea, with munitions slamming into the Palestinian territory at a rate of one every 10 minutes at one point.
The death toll on the Palestinian side has now reached 130, according to Gaza health officials.
US secretary of state Hillary Clinton is holding a second round of talks with Israeli prime minister Benjamin Netanyahu, defence minister Ehud Barak and foreign minister Avigdor Lieberman.
Israeli airstrikes have continued on Wednesday morning, but with less intensity according to Alessandro Romano, an Italian activist for the Palestinian solidarity network in the Gazan northern refugee camp of Jibalya.
"Bombardments this morning were not as massive as Tuesday night, but reports of a truce are fading," he told IBTimes UK. "Yesterday afternoon I witnessed high tension at the Jibalya refugee camp. There were rumours of a ceasefire then dismissed."
Romano reported that thousands of people flocked to the Jibalya camp to seek shelter for the night after IDF jets dropped leaflets urging people to evacuate and move to safer places.
"Despite Israeli leaflets, the population did not leave northern areas and Gaza City," the activist said. "They sought refuge in schools and public buildings."
Shelling also weakened in the southern part of the Gaza Strip, in the city of Khan Younis.
"At this time yesterday there were 11 people killed," Sami Abu Omar, fixer for Italian media and collaborator to various NGOs, told IBTimes UK. "But Tuesday night was terrible. The IDF bombarded from midnight to 4am local time and nobody slept. They targeted 100 targets across Gaza, including the Hamas civil administration compound, which organises visits, passports, construction licences etc..."
Israeli strikes also targeted a Hamas interior ministry office.
"People are waiting for a truce," said Sami. "Everybody expected a truce on Tuesday evening at 9pm, when a press conference was called. But Israel is taking time to bargain with Egypt and ask for some concessions.
"People are afraid of a ground invasion like 2008, when a lot of people were killed and many buildings were shattered into pieces."
Israel claims it targeted tunnels, an underground rocket launcher and a Hamas or "terror operative" in the latest round of strikes against Gaza.
"This morning in #Gaza, the IDF targeted 43 tunnels and an underground rocket launcher. The Israeli Navy also targeted a terror operative," IDF's official twitter account reported.
Hamas and Israel have blamed each other for the stalled negotiations. An official told Israel Radio that "a last-minute delay in the understandings" between the two sides has been holding up the peace plan.
Despite the present impasse, some reports suggest a deal on the Egypt-brokered truce may be struck on Wednesday.
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La día del autobús
... metal. After that, we got back in the bus and made it to Sarachi where they are known for the World's Largest Ox Cart. It was HUGE! And after that we toured an Ox Cart factory and got to see the intricate paintings in the process of being painted. They are beautiful and those guys must have so much patience! There we also had a really yummy buffet lunch. We then got back on the bus and drove like 2 hours to Arenal where we will spend ...
Costa Rica
... Holding our bags especially tight, we made it across and into Costa Rica.
We had organised a shuttle to take us from Panama to the Capital San Jose. Along the way the shuttle stopped for lunch at this nice little beach cove resort which gave us something else to think about when considering our first impressions of this new country...
Awesome day in Santa Elana
... brown in color and some are blue.
The Cailigo Memnon (or Caligo memnon), also known as the owl butterfly can be found living in Central and South America. There are some other names associated with this butterfly and they are the Tawny owl butterfly, and Memnon's Owl. They are rather large, as butterflies go, about ...
San Jose to La Fortuna
... active volcanoes. La Fortuna is less than 10 km from the peak of Arenal and less than 20 km from the entrance to Arenal Volcano National Park (the entrance is west of the peak, whereas La Fortuna is east of the peak).
Other than the volcano, La Fortuna has tourist attractions such as the ...
A slow start......and a wild finish!
... defence mechanism to keep their pray away. They release a specific scent which coats the hair of an animal and causes it to smell similar to that of a skunk. Why is this a good defence you ask? Well, who's going to want to come near you and attack when you stink! Here in the Primary forest we soon learned that not all life was started on the ground. On every tree in this part of the forest, exists another layer, or more of other vegetation. There are trees ...


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Philips USA 9" Dual Widescreen Portable DVD Player
About this item
The Philips 9" Widescreen Portable DVD Player allows you to travel with your movie collection. The dual-screen system of this USA Philips Widescreen Portable DVD Player allows multiple users to share the movies. TFT color display produces stunning imaging while the 9" widescreen features 16:9 aspect ratio to keep the images proportional. The 480 x 234 display resolution formats your content correctly on the screen. Built-in stereo speakers produce high-quality sound. The Philips 9" Dual Screen Portable DVD Player supports multiple playback formats, such as CD-RW, DVD, MP3-CD, JPEG compatible, DVD-R/RW and (S)VCD. The Philips 9" Widescreen Portable DVD Player will provide hours of quality entertainment while you are on the go.
Philips USA 9" Dual Widescreen Portable DVD Player:
- Dual screen system allows for multiple users to share the entertainment
- 9" widescreen (16:9), TFT color display
- Display resolution: 480 x 234
- DVD, DVD-R/RW, (S)VCD, CD, JPEG compatible and MP3-CD, CD-RW playback
- Built-in stereo speakers
|Product Type:
|DVD player with LCD monitor / LCD monitor
|Intended For:
|Media Format:
|Media Type:
|CD-R, CD-RW, SVCD, DVD-R, DVD+RW, DVD-RW, DVD+R, DVD, CD, Video CD
|DVD player - monitor unit integrated
|Mp3 Playback:
|Response Bandwidth:
|20 - 20000 Hz
|Parental Lock:
|Built-in stereo speaker system
|Digital Audio Format:
|Dolby Digital output
|Connector Type:
|DVD player with LCD monitor : headphones ( mini-phone stereo 3.5 mm ) DVD player with LCD monitor : composite video/audio output ( mini-phone 3.5 mm ) LCD monitor : headphones ( mini-phone stereo 3.5 mm ) LCD monitor : composite video/audio input ( mini-phone 3.5 mm )
|Cables Included:
|2 x video / audio cable
|TFT active matrix
|Model No.:
|Shipping Weight (in pounds):
|Product in Inches (L x W x H):
|16.55 x 13.4 x 2.75
|Assembled in Country of Origin:
|USA or Imported
|Origin of Components:
|USA or Imported
|Walmart No.:
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Display your gun collection and add style to any dcor with American Furniture Classics 12-Gun Slanted-Base Cabinet. This attractive solid-wood and wood-veneer display case provides fully locking cabinetry for peace of mind. Two drop-down front doors,more >> less >>
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The Gunfather Clock features concealed gun storage for up to six guns. This fully locking cabinet with a decorative moon dial and additional storage behind the lower door provides added security for your prized possessions.more >> less >>
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L.L. Bean described this classic knife as "great for cleaning game fish and very handy for general camp and home use." We've recreated the original full-tang design used when it was introduced in 1934. The rosewood handle features the original L.L.Bean logo. High carbon steel blade sharpens...more >> less >>
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Direct replacements for factory sights on popular handguns gather ambient light for superb visibility. The more light, the brighter the rods glow. 3-dot sight picture; front sight has red insert, rear has two green inserts. The Fire Sights for guns originally equipped with fixed sights are also fixed. If the gun was originally equipped with an adjustable rear sight, the Fire Sight will be adjustable. Mfg: Williams Gun Sightmore >> less >>
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The lightweight, all-purpose Swiss Army Classic Knife includes scissors, blade, screwdriver, nail file, tweezers and a toothpick.more >> less >>
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The awesome power of the SOG Twitch II knife with a classic rosewood handle! Modern sophistication meets classic styling with the addition of the rosewood handle on this popular SOG model. But don't let the classic look fool you, it still bears all the modern technology you come to expect from SOG such as their state-of-the-art Assisted Opening Technology and Cryogenic Heat Treatment.SOG Twitch II Features: SOG Assisted Technology. Once initiated, the knife opens and locks in place on its own! SOG Cryogenic Heat Treatment increasing overall strength and edge retention Drop point design Rosewood Handle that engraves dark brown for excellent contrast! Satin Finish AUS-8 Blade Belt Clipmore >> less >>
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- By Gary Conley, TechSolve
Lately, innovation has become a buzzword. But it can be argued that innovation is more important to manufacturing than any other industry because it is the vital process for manufacturers to avoid having their products and services commoditized. Additionally, the 21st century customer operates at lightning speed and expects immediate gratification. Innovation could mean finding a way for manufacturers to respond to and correct customer problems faster and more efficiently.
While the business world is clamoring for "true innovation" the reality is that being innovative is a mindset — but driving innovation is a process that needs both structure and openness. TechSolve's mission is to help manufacturers find ways to innovate without a billion dollar research and design budget. We do this by helping manufacturing leaders attack operational inefficiencies and obstacles to innovation as part of total systems approach. We have created an entirely new system by combining the best practices of Lean and quality management with the best practices of innovative problem solving and new product development.
This new type of management system is not a "flavor of the month". Instead, It builds on the Lean and quality improvement processes that many manufacturers have made in the past. It also makes businesses more able to develop solutions to all of their very important operating challenges and all of their very important opportunities. The end results are companies that move at a more rapid pace, operate at greater efficiency and lower costs bringing products to market that are better and command premium prices
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Welcome Home - PAX AUS 2014
By Master_Craig
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Last night I returned home from PAX AUS 2014. Long story short, it wasn't perfect, but it was quite possibly the best weekend I've had this year. It was a lot of fun. If you'd like to continue reading, the long story is just below. Buckle up. This is gonna be...
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GUILDFORD, UK. – July 1, 2008 – Electronic Arts Inc. (NASDAQ: ERTS) today revealed it has created platform specific experiences for its popular FIFA 09 football franchise from EA SPORTS™. FIFA 09 has been designed and customized to deliver a unique gameplay experience that takes advantage of the hardware specifications of each available platform— the PLAYSTATION®3 computer entertainment system, Xbox 360™ video game and entertainment system, Wii™ home video game system, PC, PlayStation®2 computer entertainment system, Nintendo DS™, PSP® (PlayStation®Portable) system and mobile—when it is released worldwide this autumn.
"We have listened and responded to gamers and football fans around the world by building customized gameplay experiences for FIFA 09 on each platform," said Andrew Wilson, Vice President & Executive Producer for the franchise. "Everyone wants to play a football game that is customized to their system and delivers a unique and enjoyable experience. We understand that and have innovated features, created new modes and designed controls that are tailored to each specific platform."
With over 250 additions and enhancements to core gameplay, FIFA 09 on the PLAYSTATION 3 system and Xbox 360 deliver an authentic football simulation that enables you to customize the game to suit your style and ability. New animation technology creates more responsive first-time shooting and passing, faster and more controlled dribbling, and improved trapping. New player momentum physics, which exploits the power of these platform engines, delivers realistic player collisions, authentic jostling for the ball, and more variation in tackling.
"We listened to our consumers to make the changes that they wanted," said David Rutter, Producer of FIFA 09 on the PLAYSTATION 3 system and Xbox 360. "No other game has over 250 feature changes and additions focused on improving core gameplay. We have an absolutely authentic recreation of the real sport through attention to detail."
For the first time, go inside the game engine to customize the strategy and positioning of your teammates to decide exactly how your team will play in any situation. With new Custom Team Tactics you have all the tools to become a first-team coach. Adjust and customize tactical settings so CPU players and your team perform just like the real-world team plays and make strategic decisions to exploit your opponent's weaknesses, all on-the-fly. The popular feature innovation Be A Pro has expanded to a career mode called Be A Pro: Seasons where you can choose or create a professional player and then develop his skills at a single outfield position over four years with the ultimate goal of becoming a national legend. The matchday experience is now true-to-life with a referee and linesmen on the pitch. Plus, crowds, stadium atmosphere and commentary have all been regionalized in exact detail.
On the Wii, enjoy FIFA 09 All-Play one of two ways—a Wii-specific take on the authentic '11 vs. 11' simulation or over-the-top '8 vs. 8' arcade action within a stylized environment with Mii™ versions of your favorite superstars, like Ronaldinho and Wayne Rooney. Refined motion and point-and-play controls make playing FIFA 09 All-Play even more intuitive and perfectly balanced for gamers of any ability to enjoy fun, football action. Choose to play the style that best suits your skills from advanced controls for experienced players to new EA SPORTS™ All-Play controls that enables novice players to focus on fun using simplified controls with AI assistance.
"You've never played football like this before," said Kaz Makita, Line Producer of FIFA 09 All-Play. "Our new '8 vs. 8' Footii Match enables you to play an exaggerated style of football where the personality of your Mii comes to life. You can play with your Mii characters against or alongside some of the biggest stars in a truly unique football experience tailored specifically for the Wii version of FIFA 09."
FIFA 09 on PC now features leading-edge visuals that deliver graphics that exploit the power of hi-spec gaming PCs, as requested by PC gamers. Star players are featured in photorealistic quality with remodeled likenesses for ultra-realistic gameplay. FIFA 09 on PC also features customizable mouse gameplay controls that deliver deeper, more intuitive command over your squad. Plus, customizable widgets are now integrated into the menu system to connect you to the FIFA community and real-world football so you stay connected while playing FIFA 09.
"We are committed to investing and innovating to create a PC specific experience," said Producer Paul Hossack. "Gamers want a gameplay experience exclusively for PC and FIFA 09 on PC delivers this."
With 500 new animation sequences and all-new collision and shielding systems—representing the biggest innovations to the multiplatform EA SPORTS football engine in four years— FIFA 09 delivers more responsive, intelligent and realistic physical action on the PlayStation 2 system. The new collision detection system with 360 degree coverage enables players to behave according to their physical attributes where player speed, direction and strength determine everything from the severity of the collision to the outcome of possession. Changes to the animation system reward the skillful gamer during one-on-one situations between attackers and defenders. Tuned acceleration attributes enable swifter virtual players to possess quicker first steps and gain advantage in sprints. Plus, four new skill moves—scoop turns, rainbow flicks, heel-to-heel knocks and ball rolls—give you a total of 32 tricks in your arsenal to perform just like Ronaldinho.
FIFA 09 on the PSP system and Nintendo DS now include the innovative Be A Pro feature, including the unique Be A Pro camera that re-creates the rush and excitement of racing in on goal, designed exclusively for each system.
Additional major feature innovations for PLAYSTATION 3, Xbox 360 and PC will be revealed later this month and announced at the Leipzig Games Convention in August. Screenshots and product fact sheets can be downloaded at www.electronicarts.co.uk/press.
To learn more about specific features on each platform visit www.FIFA.ea.com.
FIFA 09, scheduled for worldwide release this autumn, is developed by EA Canada in Vancouver, B.C. It has not yet been rated by ESRB or PEGI.
About Electronic Arts
Electronic Arts Inc. (EA), headquartered in Redwood City, California, is the world's leading interactive entertainment software company. Founded in 1982, the company develops, publishes, and distributes interactive software worldwide for video game systems, personal computers, cellular handsets and the Internet. Electronic Arts markets its products under four brand names: EA SPORTS™, EA™, EA SPORTS Freestyle™ and POGO™. In fiscal 2008, EA posted GAAP net revenue of $3.67 billion and had 27 titles that sold more than one million copies.. EA's homepage and online game site is www.electronicarts.co.uk. More information about EA's products and full text of press releases can be found on the Internet at www.electronicarts.co.uk/press
EA, EA SPORTS, EA SPORTS FREESTYLE, and POGO are trademarks or registered trademarks of Electronic Arts Inc. in the U.S and/or other countries. Official FIFA licensed product ' © The FIFA brand OLP logo is a copyright and trademark of FIFA. All rights reserved.' Manufactured under licenese by Electronic Arts Inc. Player names and likenesses used under license from FIFA, International Federation of Professional Footballers "(FIFPro)" and national teams. Microsoft, Xbox, and Xbox 360 are registered trademarks of the Microsoft group of companies. "PlayStation", "PLAYSTATION" and PSP are registered trademarks of Sony Computer Entertainment Inc. Memory Stick Duo™ may be required (sold separately). Nintendo DS, Mii and Wii are trademarks of Nintendo. All other trademarks are the property of their respective owners.
Content on this page comes directly from press releases and fact sheets provided by publishers and developers and was not written by the Game Revolution staff.
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A method of growing quaternary epitaxial films having the formula YCZN wherein Y is a Group IV element and Z is a Group III element at temperatures in the range 550-750¯ C. is provided. In the method, a gaseous flux of precursor H3YCN and a vapor flux of Z atoms are introduced into a gas-source molecular beam epitaxial (GSMBE) chamber where they combine to form thin film of YCZN on the substrate. Preferred substrates are silicon, silicon carbide and AlN/silicon structures. Epitaxial thin film SiCAlN and GeCAlN are provided. Bandgap engineering may be achieved by the method by adjusting reaction parameters of the GSMBE process and the relative concentrations of the constituents of the quaternary alloy films. Semiconductor devices produced by the present method have bandgaps from about 2 eV to about 6 eV and exhibit a spectral range from visible to ultraviolet which makes them useful for a variety of optoelectronic and microelectronic applications. Large-area substrates for growth of conventional Group III nitrides and compounds are produced by SiCAlN deposited on large-diameter silicon wafers. The quaternary compounds, especially the boron containing compounds, exhibit extreme hardness. These quaternary compounds are radiation resistant and may be used in space exploration.
1. A method for depositing an epitaxial thin film having the quaternary formula YCZN wherein Y is a Group IV element and Z is a Group III element on a substrate at temperature between ambient temperature and 1000¯ C. in a gas source molecular beam epitaxial chamber, comprising introducing into said chamber:
i. gaseous flux of precursor H3YCN wherein H is hydrogen or deuterium; and
ii. vapor flux of Z atoms;
under conditions whereby said precursor and said Z atoms combine to form epitaxial YCZN on said substrate.
2. The method of
3. The method of
4. The method of
5. The method of
6. The method of
7. The method of
8. The method of
9. The method of
10. The method of
11. The method of
12. Layered semiconductor structure made by the method of
13. A microelectronic or optoelectronic device comprising a layered semiconductor structure of
14. The method of
15. The method of
16. The method of
17. The method of
18. The method of
19. The method of
20. The method of
21. Epitaxial thin film having the formula YCZN wherein Y is a Group IV element and Z is a Group III element or a transition metal, made by the method of
22. Epitaxial thin film having the formula YCZN wherein Y is a Group IV element and Z is a Group III element or a transition metal, made by the method of
23. Epitaxial thin film semiconductor having th e formula SiCAlN made by the method of
24. Epitaxial thin film semiconductor made by the method of
25. Optoelectronic device comprising epitaxial thin film semiconductor of
26. Optoelectronic device of
27. Microelectronic devices comprising epitaxial thin film semiconductor of
28. Microelectronic device of
29. Multi-quantum-well structures comprising epitaxial film semiconductor of
30. Light-emitting diodes and laser diodes comprising multi-quantum well structures of
31. Precursor for the synthesis of epitaxial semiconductors having the formula YCZN wherein Y is a Group IV element and Z is selected from the group comprising aluminum, gallium and indium, said precursor having the formula H3YCN wherein H is hydrogen or deuterium.
32. Precursor of
33. Precursor of
34. The method of
35. Epitaxial thin film made by the method of
36. Optoelectronic device comprising epitaxial thin film of
37. Microelectronic device comprising epitaxial thin film of
38. The method of
39. Multi-quantum-well structures comprising epitaxial films of
40. Light-emitting diodes and laser diodes comprising multi-quantum well structures of
41. An optoelectronic device comprising a semiconductor device of
42. Optoelectronic device of
43. Superhard coating made by the method of
44. Superhard coating of
45. Large-area substrate of SiCAlN grown on large diameter Si(111) wafers by the method of
[0001] The present invention is a Continuation-In-Part (CIP) of Low Temperature Epitaxial Growth of Quaternary Wide Bandgap Semiconductors, U.S. patent application Ser. No. 09/965,022, filed Sep. 26, 2001, which is incorporated by reference herein.
[0002] The U.S. Government through the US Army Research Office provided financial assistance for this project under Grant No. DAAD19-00-1-0471 and through the National Science Foundation under Grant No. DMR-9986271. Therefore, the United States Government may own certain rights to this invention.
[0003] 1. Field of Invention
[0004] This invention concerns a method for forming epitaxial thin films by means of gas source molecular beam epitaxy (GSMBE). More particularly, this invention relates to a method for growing high purity, low defect, device quality SiCAlN epitaxial films on silicon and silicon carbide substrates. SiCAlN films deposited on large diameter silicon wafers also serve as large-area substrates for Group III nitride growth. Semiconductor films are provided with bandgaps ranging from 2 eV to 6 eV with a spectral range from visible to ultraviolet, useful for a variety of optoelectronic and microelectronic applications.
[0005] 2. Background
[0006] Quaternary semiconductors have been sought which incorporate the promising physical and electronic properties of their individual components. Wurtzite AlN and α-SiC have many similar physical properties such as mechanical hardness (1) and thermal expansion (2,3) as well as closely matched lattice parameters (a=3.11 Å, c=4.98 Å for AlN; a=3.08 Å, c=5.04 Å for 2HSiC). Both AlN and SiC are well known wide bandgap semiconductors, with wurtzite AlN having a 6.3 eV direct bandgap and 2HSiC a 3.3 eV indirect bandgap. Quaternary materials are expected to have bandgaps intermediate to those of the constituent binary systems and in some cases the bandgaps may become direct. Thus quaternary compounds offer promise for application in a wide variety of optoelectronic devices.
[0007] Early attempts to fabricate ceramic alloys in the quaternary SiC-AlN system by hot-pressing generally involve very high temperatures in the range of 1700-2100¯ C. (4,5). Studies of hot-pressed SiCAlN samples led Zangvil and Ruh (6) to propose a phase diagram showing a flat miscibility gap at 1900¯ C. above which a 2H solid solution of SiCAlN could form. Below 1900¯ C., the ceramic was found to consist of separate SiC and AlN phases, indicating negligible solubilities between AlN and SiC. The miscibility gap spans from 15 to 85 mol % AlN, thus posing likely difficulties for the growth of SiCAlN alloy thin films by conventional techniques at lower temperatures.
[0008] Hunter in U.S. Pat. No. 6,063,185 discloses methods for producing bulk crystals of SiCAlN which are useful as substrates when sliced into thin wafers for thin film deposition.
[0009] The epitaxial growth of thin films is one of the major successes in epitaxial techniques such as molecular beam epitaxy (MBE) (7). The growth of metastable structures not available in nature allows the achievement of properties previously unattainable in equilibrium systems.
[0010] Solid solutions of AlN and SiC have been grown on vicinal 6HSiC substrates by MBE at temperatures between 900¯ C. and 1300¯ C. by Kern et al.(8,9) using disilane (Si2H6), ethylene (C2H4), nitrogen plasma from an electron cyclotron resonance (ECR) source, and Al evaporated from an effusion cell. The (SiC)1-x(AlN)x films were shown to be monocrystalline with a wurtzite (2H) structure for x≧0.25 and a cubic (3C) structure with x≦0.25. Jenkins et al.(10) reported the growth of (SiC)1-x(AlN)x solid solutions with x varying from x=0.1 to x=0.9 using metalorganic chemical vapor deposition (MOCVD) with silane (SiH4), propane (C3H8), ammonia (NH3) and trimethylaluminum (TMA) in a hydrogen carrier gas. The films were grown on Si(100) substrates at temperatures 1200-1250¯ C. and pressures between 10 and 76 Torr. Safaraliev et al. (11) deposited films of (SiC)1-x(AlN)x on 6HSiC substrates via the sublimation of sintered SiCAlN plates at temperatures 1900-2100¯ C. They determined a range of hardness between 20 and 30 GPa for the alloy films. Because of the hardness of the components, it is anticipated that GeCAlN films or coatings and other carbide/nitride quaternary semiconductors comprising Group IV and Group III elements would possess similar superhard properties.
[0011] These high temperature synthetic methods, although of research importance, are not suitable for commercial production of SiCAlN or other quaternary thin films comprising Group IV and Group III elements. Methods for growing epitaxial quaternary thin films, especially SiCAlN, under low temperature conditions that are commercially acceptable have been sought. Likewise, other promising epitaxial quaternary semiconductors and methods for depositing them as thin films on substrates useful as semiconductor devices in a wide variety of optoelectronic and microelectronic applications have been sought.
[0012] 1. Teter, D. M, MRS Bulletin 23(1), 22 (1998).
[0013] 2. Moroc, H, Strite, S, Gao, GB Lin, ME, Sverdlov B. Burns, M J, Appl. Phys. 76, 1363 (1994).
[0014] 3. Tanaka, S, Kern R S, Davis R, Appl. Phys. Lett. 66, 37 (1995).
[0015] 4. Ruh R., Zangvil A, J. Am. Ceram. Soc. 65, 260 (1982).
[0016] 5. Rafaniello W, Plichta M R, Virkar A V, J. Am. Ceram. Soc 66, 272 (1983).
[0017] 6. Zangvil A, Ruh R, J. Am. Ceram. Soc 71, 884 (1988).
[0018] 7. Parker E. H. C(Ed.), The Technology and Physics of Molecular Beam Epitaxy, Plenum Press (1985).
[0019] 8. Kern R S, Rowland L B, Tanaka S, Davis R F, J. Mater. Res. 8, 1477 (1993).
[0020] 9. Kern R S, Rowland L B, Tanaka S, . Davis R. F, J. Mater. Res. 13, 1816 (1998).
[0021] 10. Jenkins I, Irvine K G, Spencer M G, Dmitriev V, Chen N, J. Cryst. Growth 128, 375 (1993).
[0022] 12. McDiarmid A G Inorganic and Nuclear Chemistry, 1956, 2, 88-94.
[0023] 13. Goldfarb T D, The Journal of Chemical Physics 1962, 37, 642-646.).
[0024] 14. Pandey R, . Rerat M, Darrigan C, Causa M, J. Appl. Phys. 88, 6462 (2000).
[0025] Accordingly, it is an object of the present invention to provide a low temperature MBE method for the production of epitaxial quaternary semiconducting thin films. Methods for growing low-defect, thin film semiconductors of the general formula (YC)(0.5−x)(ZN)(0.5+x) wherein Y is a Group IV element and Z is a Group III element and 0<x<0.5 on a silicon or silicon carbide substrate are provided.
[0026] It is a further object of the invention to provide epitaxial quaternary SiCAlN and GeCAlN and other semiconductors produced by the present method. Semiconductor films comprising the quaternary compounds are provided. Such films exhibit bandgaps from about 2 eV to about 6 eV and exhibit a spectral range from visible to ultraviolet which makes them useful for a variety of optoelectronic applications. The quaternary compounds may also be used as a superhard coating material.
[0027] These and other objects of the invention are achieved by directing onto a substrate surface a gaseous precursor compound having the general formula H3YCN, wherein Y is a Group IV element and H is hydrogen or deuterium, while at the same time as a flux of Group III metal atoms are also deposited onto the same substrate in an MBE chamber. The growth of quaternary semiconducting thin films is accomplished on substrates of silicon, including large diameter silicon wafers, silicon carbide, and aluminum nitride/silicon wafers .
[0028]FIG. 1 is a high-resolution the cross-sectional transmission electron microscopy (XTEM) image of an epitaxial SiCAlN film grown on α-Si(0001) by the method of the present invention.
[0029]FIG. 2 is an X-ray rocking curve of an on-axis SiCAlN(0002) peak of the SiCAlN film illustrated in FIG. 1.
[0030]FIG. 3 is an XTEM image showing columnar growth of SiCAlN film grown on Si(111).
[0031]FIG. 4 is a XTEM image of a SiCAlN film grown on Si(111). FIG. 4(a) illustrates the columnar grains, and FIG. 4(b) illustrates the characteristic ..ABAB.. stacking of the 2H-wurtzite structure of the film.
[0032]FIG. 5 illustrates a proposed model of the SiCAlN wurtzite structure. 5(a) is a side view of SiCAlN atomic structure and 5(b) is a top view of the same structure.
[0033]FIG. 6 is an XTEM image of GeCAlN film grown on 6HSiC(0001) substrate showing epitaxial interface and Ge precipitate.
[0034]FIG. 7 is an XTEM image of GeCAlN film grown on Si(111) substrate. FIG. 7(a) shows a crystalline film with Ge precipitate, and FIG. 7(b) shows the transition from cubic Si(111) to hexagonal structure of the film at the interface.
[0035]FIG. 8 is a Rutherford backscattering (RBS) spectrum of SiCAlN film grown according to the method of the present invention at 725¯ C. The inset shows the C resonance peak. The RBS simulations giving the atomic compositions of Si, Al, C and N are shown in dashed curves.
[0036]FIG. 9 is the Fourier transform infrared spectroscopy (FTIR) spectrum of a SiCAlN film made by the method of the present invention.
[0037]FIG. 10 is an electron energy loss spectroscopy (EELS) elemental profile scan of Si, Al, C and N sampled across 35 nm over a SiCAlN film. The region where the 35 nm scan took place on the film is shown as a white line in the lower XTEM image.
[0038]FIG. 11 illustrates an EELS spectrum showing the K-shell ionization edges of C and N characteristic of sp3 hybridization of these elements in the SiCAlN film.
[0039]FIG. 12 illustrates atomic force microscopy (AFM) images showing the surface morphology of a SiCAlN film grown on SiC(0001). FIG. 12(a) illustrates an image at Rms: 13.39 nm Ra: 2.84 nm. FIG. 12(b) is a higher magnification image of the same surface.
[0040]FIG. 13 is a diagram of a semiconductor structure comprising the quaternary film semiconductor and a buffer layer on a silicon substrate.
[0041] While the present invention will be described more fully hereinafter with reference to the examples and accompanying drawings, in which aspects of the preferred manner of practicing the present invention are shown, it is to be understood at the outset of the description which follows that persons of skill in the appropriate arts may modify the invention herein described while still achieving the favorable results of this invention. Accordingly, the description which follows is to be understood as being a broad, teaching disclosure directed to persons of skill in the appropriate arts, and not as limiting upon the present invention.
[0042] This invention provides a low temperature method for growing epitaxial quaternary thin films having the general formulae YCZN wherein Y is a Group IV element and Z is a Group III element in a gas source molecular beam epitaxial chamber utilizing gaseous precursors having a structure comprising YCN bonds.
[0043] An epitaxial film generally refers to a film with the highest order of perfection in crystallinity, i.e. as in a single crystal. Because of their low defect density, epitaxial films are especially suitable for microelectronic and, more particularly, optoelectronic applications. The epitaxial growth of unimolecular films is generally achieved in a molecular beam epitaxy (MBE) apparatus. In molecular beam epitaxy (MBE), molecular beams are directed at a heated substrate where reaction and epitaxial film growth occurs. The technology is fully described in E. H. C. Parker (Ed.) The Technology and Physics of Molecular Beam Epitaxy, Plenum Press (1985) (7). By selecting the appropriate flux species in MBE, and by exercising precise control of the kinetic factors, i.e., flux rate, flux ratio, and substrate temperature, during growth, the morphology, composition and microstructure of films can be tailored on an atomic level.
[0044] In our present method, deposition of epitaxial film conforms to a variation of gas-source molecular beam epitaxy (GSMBE) which comprises a flux of a gaseous precursor and a vapor flux of metal atoms directed onto a substrate where the precursor reacts with the metal atoms to commence growth of epitaxial thin film on the substrate. Typically, the gaseous precursor is connected via a high vacuum valve to the MBE chamber (which will be known henceforth as a GSMBE reaction chamber) containing a heated substrate. Also installed in the GSMBE reaction chamber is a gas effusion Knudsen cell containing metal atoms. Sources of other vapor flux atoms may also be installed in the chamber. The gaseous precursor is allowed to flow into the reaction chamber which is typically maintained at a base pressure of about 10−10 Torr by a ultrahigh vacuum pumping system In the present method, the film growth process is conducted in the GSMBE chamber with the substrate held at temperatures between ambient temperature and 1000¯ C., preferably in the range of 550¯ C. to 750¯ C., with flux species consisting of a unimolecular gas-source precursor and elemental atoms from one or more effusion cells. The precursor provides the backbone or chemical structure upon which the quaternary compound builds. The substrates are preferably silicon or silicon carbide wafers. In the method, the substrate, growth temperature, flux species and flux rate may be chosen to determine various features of the quaternary film undergoing growth.
[0045] The present method is based on thermally activated reactions between the unimolecular precursor and metal atoms, Z. The molecular structure of the precursor consists of a linear YCN skeleton with the target stoichiometry and direct YC bonds that favor low-temperature synthesis of the quaternary thin film. Any remaining HY terminal bonds are relatively weak and are eliminated as gaseous H2 byproducts at low temperatures, making a contamination-free product. The unsaturated and highly electron-rich N site of the CN moiety has the required reactivity to spontaneously combine with the electron-deficient metal atoms (Z) to form the necessary ZN bonding arrangements without any additional activation steps.
[0046] In the present method, gaseous flux of unimolecular precursor having the formula H3YCN in vapor form wherein Y is a Group IV element, preferably silicon or germanium and H is hydrogen or deuterium is introduced into a GSMBE chamber. A vapor flux of Z atoms, wherein Z is a Group III metal, is also introduced into the chamber from an effusion cell. Pressure and other conditions in the chamber are maintained to allow the precursor and the Z atoms to combine and form epitaxial YCZN on the substrate. Temperature of the substrate during the reaction maintained at a value above ambient and less than 1000¯ C., considerably below the temperature of the miscibility gap of SiC and AlN phases at 1900¯ C. (6). Most preferably the temperature is maintained between about 550¯ C. to 750¯ C.
[0047] In an important aspect of the method of the present invention, a precursor compound having the formula H3YCN wherein Y is a Group IV element, preferably silicon (Si) or germanium (Ge) and wherein H is hydrogen or deuterium, is provided. The precursor H3SiCN may be synthesized in a single-step process by a direct combination reaction of SiH3Br and AgCN. Other suitable methods for preparation of H3SiCN are known in the art. See, e.g. the method reported by A. G McDiarmid in Pseudohalogen derivatives of monosilane Inorganic and Nuclear Chemistry, 1956, 2, 88-94) (12) which involves the reactions of SiH3I and AgCN. H3SiCN is a stable and highly volatile solid with a vapor pressure of 300 Torr at 22¯ C., well suited for the MBE film-growth process. For preparation of quaternary YCZN wherein Y is germanium, the precursor D3GeCN is provided. In these instances, deuterium replaces hydrogen in the precursor to achieve better kinetic stability. The unimolecular precursor GeD3CN may be synthesized using a direct reaction of GeD3Cl with AgCN. Other methods for preparation of GeD3CN utilize GeD3I as the source of GeD3 as disclosed in Infrared spectra and structure of germyl cyanide T. D. Goldfarb, The Journal of Chemical Physics 1962, 37, 642-646. (13).
[0048] In certain instances of the method, the flux rate of metal atom (Z) and precursor are maintained at a rate that provides an essentially equimolar amount of precursor and metal atom to the surface of the substrate i.e., the number of precursor molecules arriving at the substrate surface is the same as the number of metal atoms from the Knudsen effusion cell. In these instances, the quaternary semiconductor that is formed is essentially stoichiometric YCZN and will have the formula (YC)(0.5−x)(ZN)(0.5+x) wherein Y is a Group IV element and Z is a Group III element and x is essentially zero.
[0049] In certain other instances of the method, the stoichiometry of the quaternary compound may be changed by increasing the amount of ZN component. In these instances, extra N-atoms which may be generated by methods known in the art, preferably from a radio frequency (RF) plasma source (also mounted in the MBE chamber) are supplied and the metal (Z) atom flux is increased slightly. The ZN content of the quaternary compound is thus increased to more than 50% , i.e., x>0, as metal atoms Z combine with N in the Y-C-N precursor and also with the gaseous N-atoms to form additional ZN . Correspondingly, the YC content will become less than 50%, i.e. drop to 0.5−x, because YC+ZN=100%. In these instances, the resultant semiconductor will have the formula (YC)(0.5−x)(ZN)(0.5+x) wherein Y is a Group IV element and Z is a Group III element and x is between 0 and 0.5.
[0050] In an important aspect of the invention, the bandgap of the semiconductors may be adjusted by varying the deposition parameters to create a series of (YC)0.5−x(ZN)(0.5+x) films with different values of x. The bandgap of the quaternary film will reflect the relative concentrations, or stoichiometry of the two components. The composition of the film, i.e. the value of x, can be adjusted by supplying excess C as from CH4 gas or N as N-atoms from a radio-frequency plasma source. In certain instances, for example when the YC component of the quaternary compound has a different band gap from the ZN component, the flux ratio of precursor, metal atoms and nitrogen atoms may be controlled to increase the amount of ZN in the film and to provide a quaternary film having the desired bandgap.
[0051] The bandgap can also be adjusted by changing the constituents, for example, from SiC to GeC or SnC (with calculated bandgaps of 1.6 eV and 0.75 eV respectively). In these instances, the formula of the quaternary compounds will be (YC)(0.5−x)(ZN)(0.5+x) wherein Y and Z are independently the same or different in each occurrence. Thus a complete series of solid solutions between Group IV carbides and Group III nitrides can be synthesized via the present method to provide semiconductors with bandgaps ranging from 2 eV to 6 eV, covering a spectral range from infrared to ultraviolet, ideal for a variety of optoelectronic applications. Examples of related novel systems may be selected from the group comprising SiCGaN, SiCInN, GeCGaN, SnCInN, GeCInN.
[0052] In preferred methods of the present invention, the YCZN quaternary films are grown on semiconductor substrates, preferably Si(111) or α-SiC(0001). Si(100) and Si wafers of other orientations or other material structures may also be used as substrates. Deposition on α-SiC(0001) substrates is virtually homoepitaxy which leads to a low density of misfit and threading dislocations desirable in semiconductors. In those instances wherein silicon is the substrate, a native SiO2 layer is generally present, and the quaternary film is deposited on the SiO2 layer. It has been observed that in the present method, the amorphous oxide layer is largely replaced with a crystalline aluminum oxide layer which in turn promotes epitaxial growth of the quaternary film. FIG. 4 illustrates this phenomenon.
[0053] In certain instances, the epitaxial film is deposited on a buffer layer on the silicon substrate. In these instances, the buffer layer provides improved lattice matching for epitaxial growth of the film. Deposition on AlN/Si(111) substrates, for example, is virtually homoepitaxy which leads to a low density of misfit and threading dislocations desirable in semiconductors useful in a variety of optoelectronic and microelectronic applications. Preferred buffer layers are the Group III nitrides, aluminum nitride (AlN), germanium nitride (GeN), indium nitride (InN), aluminum gallium nitride (AlGaN) and indium gallium nitride (InGaN), most preferably AlN.
[0054] Layered semiconductor structures comprising a buffer layer and a quaternary epitaxial film having the formula YCZN deposited on the layer are provided FIG. 13 illustrates a model of a layered semiconductor structure (10) comprising semiconductor quaternary film XCYN (106), buffer layer (104) and substrate silicon or silicon carbide.
[0055] In a preferred embodiment of the method, epitaxial SiCAlN films were grown in a GSMBE chamber according to the present method from the gaseous precursor H3SiCN and Al atoms from an Knudsen effusion cell supplied to the chamber directly on 6HSiC (0001) wafer as substrate with the substrate temperature in the region of 550¯ C. to 750¯ C.
[0056] In this instance, the α-SiC (0001) wafers were cleaned and surface scratches removed using a process described in U.S. patent application Ser. No 09/414,953, I. S. T. Tsong et al., Method for forming a low-defect epitaxial layer in the fabrication of semiconductor devices, herein incorporated by reference. The base pressure in the MBE chamber was about 2æ10−10 Torr, rising to about 5æ10−7 Torr during deposition. The flux rate of each species was set at about 6æ1013 cm−2s−1, giving a H3SiCN:Al flux ratio of 1 and a growth rate at 700-750¯ C. of 4 nm min−1. Films with thickness 130-150 nm were deposited. The deposited films had a transparent appearance as expected for a wide bandgap material.
[0057]FIG. 1 is a high-resolution cross-sectional transmission electron microscopy (XTEM) image showing the texture and epitaxial quality of SiCAlN films grown on 6H-Si(0001) by the present method. Deposition of SiCAlN films on 6HSiC(0001) substrates is virtually a homoepitaxial process giving a layer-by-layer growth mode which leads to a low density of misfit and threading dislocations. Excellent epitaxial behavior is observed at the interface, as shown in the by XTEM image in FIG. 1. The improved film quality is also indicated by the narrow peak width in the X-ray rocking curve with an on-axis SiCAlN (0002) peak in FIG. 2 showing a FWHM of 73.6 arcsec.
[0058] In another preferred embodiment of the present invention, SiCAlN was deposited by the present method on Si (111) crystals as the substrate. In this instance, epitaxial SiCAlN films were grown in a conventional GSMBE chamber according to the present method, as described hereinabove, directly on Si(111) wafer as substrate with the substrate temperature in the region of 550¯ C.-750¯ C.
[0059] However, in this instance, cleaning of the Si(111) substrate and removal of the native SiO2 layer prior to deposition were not performed. Instead, the SiCAlN film was deposited directly on the Si(111) substrate surface with its native oxide layer intact. The EELS spectra of the SiCAlN film obtained with a nanometer beam scanned across the interface show the presence of oxygen. XTEM images of the film/substrate interface show that the amorphous oxide layer has disappeared, replaced by a crystalline interface. It appears that deposition of the SiCAlN film results in the spontaneous replacement of the amorphous SiO2 layer with a crystalline aluminum oxide layer which in turn promotes epitaxial growth of SiCAlN. FIG. 4(b) is an XTEM image of SiCAlN grown in Si(111) with a native SiO2 coating showing the amorphous SiO2 layer replaced with a crystalline aluminum oxide layer and the epitaxial SiCAlN grown thereon.
[0060] Because of the elimination of the native SiO2 layer when a crystalline SiCAlN film is grown on a Si(111) substrate, the process of depositing SiCAlN on a large-diameter Si(111) wafer will produce a large-area substrate lattice-matched for growth of Group III binary or ternary nitrides such as GaN, AlN, InN, AlGaN and InGaN. Large-diameter wafers is a term used in the art to designate wafers larger than about 2 inches.
[0061] The microstructure of the films is revealed by a typical XTEM image of the SiCAlN film on Si(111) shown in FIGS. 3 and 4a and 4(b). Columnar grains 25-30 nm wide extending from the film/substrate interface through the entire layer are illustrated by the XTEM image shown in FIGS. 3 and 4(a). The columns here are well-aligned with predominantly basal-plane growth. The randomness in the orientation of the crystallographic planes in the columns are visible in FIG. 3. The characteristic ..ABAB.. stacking of the 2H wurtzite structure are clearly visible in the high-resolution XTEM images of FIG. 4(b).
[0062] Characterization of the deposited films by a variety of spectroscopic and microscopic techniques yielded a near-stoichiometric composition throughout the columnar wurtzite structure with lattice parameters very close to those of 2HSiC and hexagonal A1N. Transmission electron diffraction (TED) patterns revealed a disordered wurtzite material with lattice constants a=3.06 Å and c=4.95 Å, very close to those of 2HSiC and hexagonal AlN. Analysis of the films with electron energy loss spectroscopy (EELS) with nanometer beam size showed the uniformity of elemental distribution throughout the SiCAlN film. The EELS results thus confirm that the film contains a solid solution of SiCAlN. All four constituent elements, Si, Al, C and N, appear together in every nanometer-scale region probed, without any indication of phase separation of SiC and AlN or any segregation of individual elements in the film. A model of the 2H hexagonal structure of SiCAlN is given in FIG. 5.
[0063] In other preferred embodiments of the invention, quaternary epitaxial films were grown on a buffer layer on the silicon substrate. In contrast to growth of SiCAlN on α-SiC(0001) substrates, there may be a large lattice mismatch between the SiCAlN film and the Si(111) substrate. In order to improve epitaxial growth of SiCAlN on Si(111), a buffer layer on Si(111) may be deposited on the Si(111) substrate prior to growth of SiCAlN. The preferred buffer layer is aluminum nitride (AlN). An AlN buffer layer may be deposited by methods known in the art, as, for example, the method disclosed in U.S. patent application Ser. No. 09/414,953 , I. S. T. Tsong et al., Method for forming a low-defect epitaxial layer in the fabrication of semiconductor devices, herein incorporated by reference. Generally, the AlN buffer layer may be deposited through a precursor containing the AlN species or in other instances Al may be provided by evaporation from an effusion cell and combined with N-atoms from a radio-frequency plasma source. Both types of deposition take place in a conventional MBE chamber.
[0064] Other preferred embodiments of the present invention provide a method for preparing epitaxial quaternary films of the formula GeCZN wherein Z is a Group III element. Epitaxial quaternary films of the formula GeCZN wherein Z is aluminum, gallium or indium or, in certain instances, transition metals, are also wide bandgap semiconductors and are an alternative optoelectronic material to SiCAlN because of the theoretical bandgap of 1.6 eV for GeC (14),
[0065] Quaternary GeCAlN compounds are prepared by the present method by providing the precursor D3GeCN. A flux of gaseous precursor, unimolecular D3GeCN molecules, and vapor flux of Al atoms are introduced into the GSMBE chamber maintained at a pressure whereby the precursor and Al atoms combine to form epitaxial GeCAlN thin film the substrate. Temperature during the reaction is less than 1000¯ C., most preferably between about 550¯ C. to 750¯ C. Substrate is silicon, preferably Si (111) or α-SiC(0001). In certain other instances, a transition metal, Ti, or Zr, e.g. may be supplied from an effusion cell to form a series of quaternary compounds of different metal atoms.
[0066] The microstructures of GeCAlN films deposited at 650¯ C. on Si and SiC substrates are shown in XTEM images in FIGS. 6 and 7. The diffraction data indicate that this material consists of cubic Ge particles and disordered hexagonal crystals containing all the constituent elements, Ge, Al, C and N, according to EELS analyses. RBS analyses revealed that while the Al, C and N contents are nearly equal, the Ge concentration is substantially higher than the ideal 25% value. Similar to the growth of SiCAlN on Si(111) substrates with intact native oxide layers, the XTEM images of GeCAlN/Si interfaces as depicted in FIG. 7 show a clear transition from cubic structure of the substrate to hexagonal structure of the film without the amorphous oxide layer.
[0067] Semiconductor quaternary YCZN grown in accordance with the method of the present invention may be doped in order to achieve p-type or n-type material by methods known in the art. The as-deposited SiCAlN films, e.g., are generally of n-type intrinsically. To render the film p-type, dopants known in the art, Mg, for example, may be used.
[0068] The hardness of the films prepared by the present method, defined as the applied load divided by the indented surface area, was measured using a nano-indentor (Hysitron Triboscope) attached to an atomic force microscope (AFM). Using the hardness value of 9 GPa measured for fused silica as a standard, the nano-indentation experiments yielded an average hardness of 25 GPa for the SiCAlN films, close to that measured for sapphire under the same conditions. The films deposited on silicon substrates are characterized to be true solid solutions of SiC and AlN with a 2H wurtzite structure. The hardness of these films is comparable to that of sapphire. The boron analogues, YCBN are anticipated to be especially suitable as superhard coatings because of the hardness values of the individual binary components.
[0069] The present method refers generally to epitaxial growth of nanostructures of quaternary semiconductors on substrate surfaces. Different features of the film surface can be enhanced, e.g. topography, chemical differences, or work function variations. Thus, in addition to films, quantum wells and quantum dots are provided by the present method.
[0070] Superlattice or quantum well structures comprising epitaxial YCZN films of the present invention define a class of semiconductor devices useful in a wide variety of optoelectronic and microelectronic applications. Such devices are useful in high-frequency, high-power, and high-temperature applications including applications for radiation-resistant use. Exemplary of the devices incorporating the wide bandgap semiconductors of the present invention are light-emitting diodes (LED) and laser diodes (LD). Generally , a LED comprises a substrate, α-SiC(0001), Si(111) or Si(111) with AlN buffer layer, and a multi-layer quantum well structure formed on the substrate with an active layer for light emission. In the present instance, the active layer comprises an (YC)(0.5−x)(ZN)(0.5+x) (where 0<x<0.5) layer that is lattice-matched with the substrate and prepared by the method of the present invention.
[0071] Also exemplary of the optoelectronic devices incorporating the present semiconductors are negative electron affinity cathodes for field emission flat-panel displays, high-frequency, high-power, and high-temperature semiconductor devices, UV detectors and sensors.
[0072] A large variety of microelectronic and optoelectronic devices comprising semiconductor devices and layered semiconductor structures of the present invention are provided.
[0073] EXPERIMENTAL SECTIONAnalysis and Characterization of epitaxial quaternary films grown by the method of the present invention.
[0074] A detailed characterization of the present quaternary YCZN films was provided by a thorough analysis utilizing a variety of techniques. The films may be more thoroughly understood in accordance with the Figures and with the results given in the following subsections entitled: (1) Composition determined by Rutherford backscattering analysis; (2) Fourier transform infrared spectroscopy (FTIR); (3) Cross-sectional transmission electron microscopy (XTEM); (4) Transmission electron diffraction (TED); (5) Energy loss spectroscopy (EELS); (6) Bandgap measurements; (7) Surface Morphology; (8) Hardness measurements.
[0075] (1) Composition of SiCAlN Films Determined by Rutherford Backscattering (RBS)
[0076] Rutherford backscattering spectrometry (RBS) was used to determine the elemental composition, detect H and O impurities, and estimate the film thickness. The Si and Al elemental concentrations of each film were measured at 2 MeV, and resonant nuclear reactions at 4.27 MeV and 3.72 MeV were used to determine the C and N contents respectively Results of this analysis are illustrated in FIG. 8.
[0077] The C and N concentrations in most films were nearly equal, at 23-24 at. % and 24-26 at. % respectively, suggesting that the entire CN unit of the precursor was incorporated into the film. The Al concentration in all films was 21-23 at. %, consistent with the high affinity of Al for the N ligand, but always slightly lower than that of C and N. The Si content for all films was measured at 27-29 at. %, consistently higher than the ideal 25 at. %. Typical compositions of the SiCAlN films determined by RBS lie in the following range: Si 27-29 atomic %, Al 21-23 atomic %, C 23-24 atomic %, and N 24-26 atomic %. The Si content is consistently higher than the stoichiometric 25 atomic %. This anomaly can be attributed to a minor loss of CN during deposition of the precursor. Alternatively, the replacement of weaker AlC bonding (which is present in an ideally stoichiometric SiCAlN solid solution) by stronger SiC bonding at some lattice sites may account for the excess Si over Al. Oxygen resonance at 3.05 MeV confirmed the absence of any measurable O impurities in the bulk. Forward recoil experiments showed only background traces of H, indicating the complete elimination of H ligands from the precursor during growth. Depth profiling by secondary ion mass spectrometry (SIMS) showed homogeneous elemental distribution throughout and confirmed the absence of O and other impurities. (2) Fourier Transform Infrared Spectroscopy of SiCAlN Films (FTIR)
[0078] Fourier transform infrared spectroscopy (FTIR) in the transmission mode was used to examine the bonding properties of the constituent elements in all films. Results are illustrated in FIG. 9. The FTIR spectrum shows two broad peaks at wavenumbers 740 cm−1 and 660 cm−1 corresponding to SiC and AlN lattice vibrations respectively. These wavenumbers are significantly lower than those of pure SiC (800 cm−1) and pure AlN (690 cm−1), consistent with the formation of an extended alloy between the two binary systems. A lower intensity peak is also observed at 600 cm−1 and is assigned to AlC type lattice vibrations. Bands between 800-900 cm−1 and is assigned to AlC type lattice vibrations. Bands between 800-900 cm−1 which would correspond to Si-N stretching absorptions are not clearly resolved in the spectrum in FIG. 9. However, their presence cannot be ruled out because it is likely that they overlap with the broad onset of the SiC absorption. The spectrum in FIG. 9 does not show any additional peaks attributable to SiH vibrations between 2200-2100 cm−1, confirming the elimination of the H ligand from the precursor.
[0079] Absorption spectra taken from Fourier transform infrared spectroscopy (FTIR) show major peaks due to SiC and AlN lattice vibrations and minor peaks due to AlC and SiN vibrations, in agreement with the wurtzite structure and chemical bonding of the SiCAlN film. (3) Cross-Sectional Transmission Electron Microscopy
[0080] The microstructure of the films was studied by cross-sectional transmission electron microscopy (XTEM). A typical high-resolution XTEM image of the epitaxial growth of SiCAlN on an α-SiC(0001) substrate is shown in FIG. 1. The characteristic ..ABAB.. stacking of the 2H wurtzite structure is clearly visible in the grains of the film shown in FIG. 1. A model atomic structure proposed for the SiCAlN epitaxial film is shown in FIG. 5. A typical XTEM image of a SiCAlN film grown on a Si(111) substrate is shown in FIGS. 3 and 4a revealing columnar grains 25 nm wide extending from the film/substrate interface through the entire layer. The XTEM images of the SiCAlN film grown on Si(111) include some columnar grains with a-lattice planes oriented normal instead of parallel to the interface (FIG. 3).
[0081] (4) Transmission Electron Diffraction
[0082] Transmission electron diffraction (TED) patterns of SiCAlN films give lattice constants of a=3.06 Å and c=4.95 Å, very close to those of 2HSiC and hexagonal AlN.Transmission electron diffraction (TED) patterns indicate a disordered wurtzite material with lattice constants a=3.06 Å and c=4.95 Å, very close to those of 2HSiC and hexagonal AlN A survey of digital diffractograms of the lattice fringes indicates that the lattice spacings are constant throughout the grains, and close to the values obtained from TED patterns.
[0083] (5) Energy Loss Spectroscopy of SiCAlN Films
[0084] Electron energy loss spectroscopy (EELS) with nanometer beam size was used to study the uniformity of elemental distribution throughout the film. Typical elemental profiles scanned across the columnar grains in the film are shown in FIG. 10 which is an EELS elemental profile scan of Si, Al, C and N sampled across 70 nm over a SiCAlN film showing the distribution of all four constituent elements. The corresponding RBS atomic concentrations for Si, Al, N, and C are 29, 21, 26, and 24 at. % respectively. The lower C content detected by EELS is due to preferential depletion of C from the lattice sites by the electron beam. The region where the scan took place on the film is shown as a white line in the lower XTEM image
[0085] All four constituent elements, Si, Al, C and N, appear together in every nanometer-scale region probed, without any indication of phase separation of SiC and Al N or any segregation of individual elements in the film.
[0086] The EELS results are accurate to within 10 at. % and thus confirm that the film contains a solid solution of SiCAlN. The minor elemental variations observed in FIG. 10 may be due to compositional inhomogeniety across grain boundaries. While the EELS elemental concentrations for N, Al, and Si in all samples are close to those obtained by RBS (certainly within the 10% error associated with the technique) the EELS elemental concentration of C is consistently lower by a significant amount than the RBS value. This is due to the preferential depletion of C from the lattice sites by the finely focused intense electron beam.
[0087] An EELS spectrum featuring K-shell ionization edges representing the σ* transition for both C and N is shown in FIG. 11. Peaks corresponding to π* transitions characteristic of sp2 hybridization are not observed at these edges, indicating the absence of sp2 hybridization are not observed at these edges, indicating the absence of sp2 hybridized carbon and related planar CN networks generally associated with the decomposition of the unimolecular precursor. The EELS spectrum thus confirms that both C and N are sp3 hybridized and tetrahedrally coordinated as in SiC and AlN.
[0088] (6) Bandgap Measurements
[0089] Optical absorption experiments suggest that the bandgap for the SiCAlN epitaxial film is no less than 3.8 eV, as would be expected from the bandgaps of the constituents SiC (3.3 eV) and AlN (6.3 eV). The direct bandgap of the SiCAlN films may be observed by vacuum ultraviolet (VUV) ellipsometry.
[0090] (7) Surface Morphology
[0091] Atomic force microscope images illustrated in FIG. 12(a) and 12(b) show a relatively smooth as-grown surface of a SiCAlN thin film grown according to the method of the present invention. The complete lack of facets on the as-grown surface indicates that the predominant growth direction is basal-plane, i.e. (0001), oriented.
[0092] (8) Hardness Measurements
[0093] The SiCAlN solid solution films can also serve as superhard coatings for protection of surfaces against wear and erosion. The hardness of the films was measured using a Hysitron Triboscope attached to a Digital Instruments Nanoscope III atomic force microscope. The hardness in this case is defined as the applied load divided by the surface area of the impression when a pyramidal-shaped diamond indentor is pressed normally into the film surface. Using the hardness value of 9 GPa measured for fused silica as a standard, the indentation experiments yielded an average hardness of 25 GPa for the SiCAlN films, close to that measured for sapphire under the same experimental conditions. The reported Vickers hardness for SiC and AlN are 28Ý3 and 12Ý1 Gpa, respectively (1).
[0094] Those skilled in the art will appreciate that numerous changes and modifications may be made to the preferred embodiments of the invention and that such changes and modifications may be made without departing from the spirit of the invention. It is therefore intended that the appended claims cover all such equivalent variations as fall within the true spirit and scope of the invention.
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Public Utilities DirectorCity of Clearwater, Fla.Population served: 108,000
Employees: 170
Budget: $68 million
Favorite technology: Advanced Metering Infrastructure (AMI)
"Technology has come a long way," says Tracy Mercer. "And with opportunities for savings (labor, fuel, etc.) and exceeding customer expectations, AMI is a win-win for everyone."
AMI hardware and software combine interval data measurement and continuously available remote communications. The measurement and collection system typically includes meters at the customer site, communication networks between the customer and the service provider, and data reception and management systems that make the information available to the service provider.
According to Mercer, a good AMI system will record daily water use and allow for customer notification of a potential leak, within a day of the leak, rather than after a monthly meter reading is collected. Also, when a customer closes one account and opens another, the readings can be collected on demand by computer, rather than the utility having to send an employee to collect a reading. Other benefits include increased meter and billing accuracy, reduced maintenance costs, and faster service restoration.
"The most fascinating aspect of this technology is the remote disconnects and connects. To me, it should be impossible to turn off a liquid with an airwave that is received by a tower or antenna and then resent to a meter," says Mercer.
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If you take a look at Motorola Mobility's company branding, you'd be hard-pressed to find much that's changed since Google bought them almost two years ago. Today that changes... a little. The Verge found the logo above in the site for Techweek, a Moto-sponsored technology show taking place in Chicago on June 27th. The new logo surrounds the familiar "M" with a segmented color wheel, and swaps out the all-caps name for a softer font with "a Google company" beneath it.
The conferences put on by AllThingsD tend to be a bit sedate - Walt Mossberg gets on stage with some Very Important People and picks their brain in front of a live audience. Not so with tonight's interview of Motorola CEO Dennis Woodside and Research & Development head Regina Dugan. At the D11 stage, Woodside let loose with a flurry of information about the company's plans for the remainder of the year, starting with the much-rumored X Phone.
Blue makes a lot of things better - berries, rhapsodies, alternative percussion groups. Whether or not Motorola's RAZRs look better with an azure paint job is something we'll leave up to you. Verizon is now selling blue versions of both the mid-range DROID RAZR M and the flagship DROID RAZR HD, though the latter is more of a trim than a full paint job. Both versions were spotted by notable tipster @evleaks about three week ago.
Intrepid leakster @evleaks has just dropped a few images of a black-boxed Motorola device that appears to be headed for AT&T. It's worth noting that this is the first Motorola product we've seen badged up for an American carrier since the RAZR HD / RAZR M last summer, quite a long time ago.
It's also a phone we've seen before. At least, it seems to be. Vietnamese blog Tinhte leaked a device with the codename "XT912A" (XT is Moto's typical device prefix for "DROID" branded devices), and it's pretty clear the two are one in the same in most respects, at least based on what we see in these photos.
QWERTY phones might be few and far between but they haven't died out completely. If you have a Motorola Photon Q and you're on C Spire, you might want to open your Settings menu and check for updates. The round sugary goodness of Jelly Bean is on its way.
The update brings a bunch of improvements in its wake:
I know a few people who just love QWERTY phones, despite the fact that they're a dying breed. For those among you who happen to love QWERTYs and are on Sprint, there's a chance you're holding a Motorola Photon Q in your hand right now. And if that's the case, you should probably head into the Settings menu and check for updates – Jelly Bean is coming your way. Get excited.
Ever since the WSJ dropped a hint about the mythical 'X Phone' back in December, the rumors have not stopped flowing. Which is great because, according to Motorola's CFO, the 18 months of product pipeline that Google acquired weren't exactly wow-ing anyone. However, according to Moto's design chief Jim Wicks, the next generation of hardware will be fantastic.
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18 Awesome Halloween Ideas For Physically Disabled Children
December 30, 2012 | 1 Comment » | Topics: Overflow
Begin — to begin is half the work, let half still remain; again begin this, and thou wilt have finished.