text: Patent ReferencesLow actuation voltage microelectromechanical device and method of manufacture Encapsulated MEMS band-pass filter for integrated circuits and method of fabrication thereof RF MEMS switch Capacitive microelectromechanical switches Microfabricated double-throw relay with multimorph actuator and electrostatic latch mechanism Micro electro-mechanical system with one or more moving parts method and apparatus Microrelays and microrelay fabrication and operating methods Method of manufacturing a self-sustaining center-anchor microelectromechanical switch Patent #: 7373717 InventorsAssigneeApplicationNo. 11776835 filed on 07/12/2007US Classes:29/622Switch makingExaminersPrimary: Phan, ThiemAttorney, Agent or FirmInternational ClassesH01H 11/00H01H 65/00 DescriptionBACKGROUND OF THE INVENTIONThis invention generally relates to micro-electromechanical system (MEMS) switches, and more particularly, to a hinge type MEMS switch and a method of fabricating the same using current state of the art semiconductor fabrication processes, suchas a CMOS process. Switching operations are a fundamental part of many electrical, mechanical and electromechanical applications. MEMS switches have drawn considerable interest over the last few years, leading to the design and development of a variety of productsusing MEMS technology that have become widespread in biomedical, aerospace, and communications systems applications. Conventional MEMS typically utilize cantilever switches, membrane switches, and tunable capacitor structures, as described, e.g., in U.S. Pat. No. 6,160,230 to McMillan et al., U.S. Pat. No. 6,143,997 to Feng et al., U.S. Pat. No. 5,970,315to Carley et al., and U.S. Pat. No. 5,880,921 to Tham et al. MEMS devices are manufactured using micro-electro-mechanical techniques and are mainly used to control electrical, mechanical or optical signal flows. Such devices, however, present manyproblems because their structure and innate material properties require that they be manufactured in lines that are separate from conventional semiconductor manufacture processing. This is usually due to materials and processes which are incompatibleand which cannot be integrated within existing semiconductor fabrication lines. Implementing MEMS (micro-electromechanical systems) switches for semiconductor applications has many advantages, such as: (1) low insertion loss, (2) low or no DC power consumption, (3) high linearity, and (4) broad bandwidth performance. However, it must be provided with a low actuation-voltage switch and must not suffer from stiction, that is, the inability to restore the switch to its original state when desired. A conventional cantilever type switch, as shown in FIGS. 1A-1B or amembrane type switch, as illustrated in FIGS. 2A-2B typically requires 10 to 100 V operating voltage, which is unsuited for integration with state-of-the-art integrated circuits. Referring back to the aforementioned U.S. Pat. No. 6,143,997, to Feng at al., and in particular, to FIG. 1A illustrated therein, a prior art cantilever switch is shown in a resting position with the cantilever portion a distance hA awayfrom an RF transmission line creating an off state, since the distance hA prevents current from flowing from the cantilever to the transmission line below it. To turn the switch on, as shown in FIG. 1B, a large switching voltage, typically in theorder of 28 Volts, is necessary to overcome physical properties and bend the metal down to contact the RF transmission line. In the energized state, with the metal bent down, an electrical connection is created between the cantilever portion and thetransmission line. Thus, the cantilever switch is on when it remains in the excited state. Referring to FIGS. 2A-2B, Feng et al. show a membrane switch, respectively, in a resting and energized position. When the membrane switch remains in its resting position, current is unable to flow from the membrane to an output pad and theswitch is turned off. Similar to the cantilever switch, a high actuation voltage, typically 38 to 50 volts, is necessary to deform the metal and activate the switch. In the excited state, the membrane is deformed to contact a dielectric layer on theoutput pad, thereby electrically connecting the membrane to the output pad to turn the switch on. This design also requires a relatively high voltage. In contrast to cantilever switches, the switching action for hinge type MEMS switches requires very low actuation voltage, typically less than 3 volts, mainly because they lack mechanical bending action. U.S. Pat. No. 6,143,997 to Feng et al.describes this type of switch. Referring to FIG. 3, the switch pad moves up and down freely along hinge bracket 22. In a relax state, as shown in FIG. 3A, the pad is attracted by a lower electrode 20, forcing it to stay at the lower level. In anenergized state, as illustrated in FIG. 3B, the pad is attracted by the top electrode 30, moving it to the top level. It is worth noting that the metal pad, i.e., rigid movable element 17, makes contact with dielectric 32 when in the upward position,and with, e.g., dielectric 18, when in a downward position. Thus, the MEMS switch described only operates as an RF switch, adequate for a high frequency environment, wherein pad 17 and electrodes 20 act as the metal plates of a capacitor separated by adielectric layer which acts as an open circuit for a DC voltage, but as a short for an AC voltage. Furthermore, the process steps to fabricate a hinge-type MEMS switch are not described by Feng et al., and no reference is made on how to integrate thistype of MEMS switches alongside with back-end-of-the-line (BEOL) metal interconnects of a conventional semiconductor chip. Another type of MEMS switch is described by L. Frenzel, in the article "MEMS Switch Puts SoC Radios on the Cusp", Electronic Design, p. 29, Jun. 9, 2003, that uses a combination of thermal and electrostatic actuation. These devices have beenused for band and circuit reconfiguration in a multi-band/multi-mode RF system. In order to change the state of the switch, each time 20 mA current must be applied, which is not practical for a CMOS chip environment. More and more MEMS switches are emerging for RF applications. For example, STMicroelectronics describes a combination of thermal and electrostatic actuation type MEMS switches for mode of operation and circuit configurations designed formulti-mode and multi-band RF system applications. Such switches also require 20 mA of current to heat the device and allow it to switch. High-currents of this magnitude are not suitable for CMOS applications. To date, conventional MEMS switches arenot CMOS compatible because: (1) they are difficult to integrate using MOS process steps and, (2) they require a high-current and high actuation operation voltages. Thus, there is a need in industry for an improved MEMS, particular, a hinge-type MEMS switch that is suited for a wide range of semiconductor switching applications, spanning from RF, optical, mechanical, package, cooling, and extending toinclude CMOS circuit applications, and which are characterized by having a low actuation voltage (less than 3 V) and which can easily be integrated within conventional integrated circuit (IC) manufacturing lines. OBJECTS AND SUMMARY OF THE INVENTION Accordingly, it is an object of the invention to provide a hinge type MEMS switch operating at a voltage compatible with typical CMOS operating voltages. It is another object to provide a hinge type MEMS switch having a low-power actuation voltage (less than 3 V). It is still another object to fabricate a hinge-type MEMS switch using state-of-the-art BEOL (back-end-of-line) interconnects without adding extra process steps or material. It is a further object to provide a hinge type MEMS switch which construction is limited to using only three metal levels. These and other objects, aspects and advantages of the invention are accomplished by a hinge type MEMS switch built on a substrate consisting of two posts, preferably terminating in a bottom cap and a top cap; a rigid movable conductive plateconsisting of a body having two opposing edges terminating in rings loosely coupled to the posts; a top electrode pair and a bottom electrode pair, preferably facing each other; top metal wiring lines co-planar with one another to be connected anddisconnected by the conductive plate, and preferably, bottom metal wiring lines, co-planar with one another, likewise, opened and shorted by the conductive plate. The operation of the switch is as follows: when in the energized state, a voltage level of the order of 3V is applied to the upper electrode pair. When grounding the lower electrode pair, the conductive plate moves up, shorting the two upperwirings lines. Conversely, the conductive plate moves downward when a voltage level of the order of 3V is applied to the lower electrode pair while grounding the upper electrode, shorting the two lower wiring lines. The MEMS switch thus formed provides an even force to the switch when applying a voltage, respectively, to the upper and lower electrode pair, forcing the conductive plate to move up and down, with the conductive plate movement being guided bythe two vertical posts. The MEMS switch of the present invention is easily integrated in an IC chip. All the elements forming the switching device are fabricated using semiconductor back-end-of-the-line (or BEOL) process, and as such, these switches can easily bemanufactured alongside other semiconductor devices and circuits on the same substrate. One aspect of the invention provides a micro-electromechanical system switch that includes: upper and lower electrodes; a rigid movable conductive plate positioned between the upper and lower electrodes; and guiding elements coupled to the rigidmovable conductive plate for guiding the movement of the rigid movable conductive plate between the upper and the lower electrodes. Another aspect of the invention provides a method of fabricating a MEMS switch on a substrate that includes the steps of: i) forming at least one depletion area within the substrate, followed by a blanket deposition of an etch stop layer thereon;ii) depositing a first metallization layer on the substrate followed by a first dielectric layer, and patterning the first metal layer with a first portion of the metal residing within the depletion and a second portion thereof residing outside thedepletion area, and patterning the first dielectric layer, leaving dielectric only on top of the metal residing within the depletion area, forming at the first metallization layer: a) bases for hinge posts, b) lower electrodes and c) lower interconnectwiring; iii) blanket depositing and planarizing a second dielectric layer deposited thereon, to form conductive vias in areas where interconnects are expected, the vias becoming a first portion of hinges; iv) depositing a second dielectric layer a secondmetallization layer followed by patterning to form: a) the lower electrodes, b) links to upper electrodes to be formed thereafter, c) a rigid movable conductive plate with holding rings on two opposing edges of the rigid movable conductive plate, and d)a second portion of the hinge posts; v) blanket depositing a third dielectric layer thereon followed by patterning, forming conductive vias in areas where interconnects are expected to become the third portion of the hinges, and interconnect wiring toprovide links to the upper electrodes to be formed thereafter; vi) depositing a fourth dielectric layer, followed by a deposition a third metallization layer thereon, and patterning to form: a) upper hinge caps, b) the upper electrodes, and c) upperinterconnect wiring; and vii) depositing a fifth dielectric serving as a hard mask, and opening a cavity down to the etch stop layer to allow the conductive plate to move freely. BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings, which are incorporated in and which constitute part of the specification, illustrate presently preferred embodiments of the invention and, together with the general description given above and the detailed descriptionof the preferred embodiments given below serve to explain the principles of the invention. FIGS. 1A-1B illustrate a prior art cantilever type MEMS switch, respectively, in the relaxed and energized state. FIGS. 2A-2B illustrate a prior art membrane type MEMS switch, respectively, in the relaxed and energized state. FIGS. 3A-3B illustrate a prior art hinge type MEMS switch, respectively, in the relaxed and energized state. FIG. 4 shows a three dimensional view of the hinge type MEMS switch, according to the present invention. FIGS. 5A-C are side views of several switching configurations of the hinge type MEMS of the present invention, wherein in FIG. 5A the switch is shown turned on and off between the ends two lines A and B; in FIG. 5B, wire C is selectivelyconnected to either one of two wires D1 and D2; and FIG. 5C, a first wire E1-F1 is connected to a second wire E2-F2, and vice versa. FIGS. 6A-6B are side views of further switching configurations of the hinge type MEMS of the present invention, showing in FIG. 6A the hinge type MEMS switch connecting (and disconnecting) a vertical line to (and from) horizontal lines x1, x2,and the like; and in FIG. 6B, the switch connecting more than two wiring lines traveling parallel to one another. FIGS. 7 through 16 are schematic cross-sectional views illustrating the process steps for fabricating the MEMS switch of the present invention, wherein all the figures labeled `A` represent a top view of the corresponding process step, all thefigures labeled `B` represent a cross-sectional view along line x-x', and all the figures labeled `C` represent a cross-sectional view along line y-y'. DETAILED DESCRIPTION OF THE INVENTION Referring now to the drawings and, more particularly, to FIG. 4 there is shown a three dimensional view of the hinge-type switch of the present invention. As previously described, the MEMS switch is activated by a low actuation voltage, which has the advantage of making the switch compatible with voltages that are characteristic of semiconductor devices, in particular CMOS technology. This is madepossible by the device not having to rely on a deformable moveable beam, that is typical of, e.g., cantilever MEMS switching devices and the like. Still referring to FIG. 4, the structure is shown consisting of two guiding posts 111A and 111B, each formed by a column terminating, respectively, in a bottom and a top cap. The top cap is made of third metal (m3), preferably, having a sizeapproximately 50% larger than the cross-sectional area of the column forming the post. The bottom cap is made of first metal (m1), which size, preferably, approximates the size of the top cap. The column forming the post is, advantageously, made ofthree portions of BEOL interconnect components, namely, a first stud (V1), a second metal (m2) and a second stud (V2). Thus, the traveling distance of the conductive plate is the summation of the three heights: V1+m2+V2. The rigid movable conductive plate consists of a planar surface 115, with opposing edges respectively ending in rings 115A and 115B integral to the planar surface of the rigid movable conductive plate; a top pair of parallel electrodes 113A and113B; a bottom electrode pair 112A and 112B, preferably facing the top pair; top interconnect wiring 116A and 116B, co-planar with one another to be shorted (or opened), and bottom interconnect wiring 114A and 114B, co-planar with one another, to beconnected (or opened). The MEMS switch is built on top of a substrate insulated with dielectric material. The MEMS switch itself does not require any devices to make it operable, except for the control of the upper and lower electrodes. By way of example, a powersupply (not shown), preferably 3V, is needed to be directed to either upper or lower electrode when either one is activated. Therefore, a circuit (not shown) is needed to switch the power supply to the selected electrode and ground the unselectedelectrode. For simplicity and better illustration, only the MEMS portion is depicted in the diagram. The MEMS switch is fabricated on top of an STI (shallow trench isolation) region (not shown) to isolate it from the silicon substrate. The voltage pulse that is applied to the lower electrode 112A and 112B is applied directly to the conductiveportions of the electrodes. Similarly, the voltage pulse that is applied to the upper electrodes 113A and 113B is likewise, also directly applied to the conductive portion of the electrodes. The pulse characteristics are defined by a control circuit(not shown). The switch operates as follows: when energized by a voltage (i.e., in the `on` state), the conductive plate 115 moves upwards guided by the two posts 111A-111B keeping the plate in a substantially horizontal orientation, shorting the twoco-planar upper wiring 116A-116B. This movement is prompted by energizing the electrode pair 113A-113B, preferably 3V, appropriate for semiconductor IC devices, and particularly for CMOS technology, while grounding the lower electrode pair 112A-112B. Likewise, the conductive plate moves vertically, retracing the same path downwards as when the switch was energized, shorting the two lower wiring lines 114A-114B. This is achieved by applying a voltage level, preferably 3V to the lower electrode pair112A-112B while grounding the upper electrode pair 113A-113B. Of particular relevance and importance are blocking dielectric pads 112C, 112D, 113C and 113D which allow upper electrodes 113A-113B to be coplanar, such that when rigid movable pad (or plate) 115 short circuits metal lines 116A to 116B, theelectrodes remain electrically insulated from the rigid movable pad 115, avoiding a short to occur between the two electrodes and metal lines 116A-116B. A similar situation is applicable to the lower electrodes 112A-112B. The surfaces of the dielectricpads 112C-112D are coplanar with metal lines 114A-114B which remain electrically insulated from the electrodes by dielectric pads 112C-112D, respectively, when shorted by rigid movable pad 115. The aforementioned structure is advantageously used in various alternate configurations applicable to the hinge-type MEMS switch of the present invention. Shown in FIGS. 5A-5C are illustrated MEMS switches in several configurations that canreadily be integrated with other semiconductor IC devices and circuits. Referring now to FIG. 5A, the single pole, single throw configuration depicted above, schematically represented by box 50, is shown with the MEMS device switching on and off between the two ends A and B of a wire. In FIG. 5B, the wire fans out in a top wire segment D1 and a bottom segment D2. The switch alternatively switches between each line segment, respectively energizing the upper MEMS electrode (also referenced "ue") and the lower electrode (or"le"). In this manner, the wire end C selectively connects to one or the other wire end, labeled D1 and D2. In FIG. 5C, the ends of two parallel wire line segments are selectively connected to the first wiring segment between ends E1 to F1, while the second wire segments E2 from F2 are disconnected, and vice versa. Referring now to FIGS. 6A-6B, two other configurations are shown, wherein two horizontal lines x1 and x2 are selectively connected to a vertical line y. Each MEMS switch is schematically shown enclosed in a circle, with the rigid movable paddepicted as a horizontal line moving in a vertical direction (shown as an arrow) to close the switch, and in an opposite direction, to open it. Such configurations find usefulness in a variety of applications, such as, e.g., power distribution grids. A power distribution grid is formed by a plurality of horizontal parallel power bus lines and a plurality of vertical parallel power buslines. The conventional approach is to short every cross-over point of two orthogonal lines. This configuration presents many disadvantages, such as poor power supply uniformity due to non-uniform power consumption across the chip. In such aninstance, it is advantageous to place a MEMS switch at each cross-over point to achieve better control on the power supply uniformity. In FIG. 6B, two horizontal lines x2 and x3 are selectively connected to a third line x1 by way of two MEMS switches labeled 60. When both MEMS switches are closed, the three lines x1, x2 and x3 connect one another. When open, lines x2 and x3are disconnected from x1. Hinge-Type MEMS Switch Fabrication Steps FIGS. 7-16 illustrate the various process steps to fabricate the MEMS switch of the present invention using CMOS technology. Referring to FIG. 7A, rectangular shaped depletion regions 102A and 102B (also referred to as cavities) with a depth d1 are formed on a wafer substrate 100. A preferred method of forming the depletion regions is described below. The wafersurface is first cleaned and coated thereafter with a layer of a known photosensitive polymeric material, generically referred to as photoresist. The photoresist is exposed by way of a photomask, preferably, in a lithographic exposure tool utilizing asuitable wavelength of light, known to those skilled in the art, to expose the photoresist. The exposed area is then dissolved in a solvent. Alternatively, rather than a "positive" photoresist, a "negative" photoresist may be advantageously employedwhere the non-exposed areas are removed during the develop process. Optionally, hardening the resist via baking in an oven is performed. The substrate cavities are created by an etching agent, such as plasma, where an excited gaseous plasma is created within a vacuum vessel with the application of one or more electric fields to a vessel containing a gas mixture of one of more ofthe following: Cl2, HBr, SF6, CF4, O2, N2, Ar, He, NF3, or any other suitable gas or gas mixture known to one skilled in the art. The etch proceeds until a predefined depth "d1" is reached. A layer of etch stop film, suchas aluminum oxide (Al2O.sub.3) 101 is then deposited. The stop film is prepared for future cavity formation. Thus, when the MEMS structure is completed, all the insulating material is removed so that the conductive plate of the MEMS is free tomove. While etching away the insulating material, it is critical that no damage be done to the devices on the substrate. The stop film inhibits the etching species to attack the substrate. Preferably, the depth "d1" ranges between 20 to 2000 nm, and the thickness of the stop film varies between 2 nm and 100 nm. The etch rate of insulating material to the stop film (known as selectivity) is of the order of 1000:1 in a CF4based plasma. Referring to FIG. 8, the first metallization (m1) is performed through a conventional metallization process such as CVD (chemical vapor deposition), PVD (physical vapor deposition--ionized, collimated, or standard), or ALD (atomic layerdeposition). It is subsequently patterned with a conventional photographic process. The metal is patterned using a plasma etching process with a gaseous mixture of one of more of the following: Cl2, HBr, BCl3, O2, N2, Ar, He, or anyother suitable gas or gas mixture known to one skilled in the art. The etch proceeds until all of the metal which is not protected by the photo-resist has been removed from the non-photoresist masked regions. Preferably, the metals include Al, Cu, Ag,W, Ru, Ti, TiN, Ta, TaN, TiSiN, TaSiN, WN, WCN, and the like. The thickness of the first metal is about the same as the depth of the depletion region "d1". Still in the first metallization layer (m1), features 201A and 201B are shown forming the bases of the hinge post. Features 200A and 200B form thebottom electrode pair, and features 202A and 202B become the connecting wiring. Note that portions of metal 200A and 200B are constructed outside depletion regions 102A and 102B. The thickness of the first metal (m1) is the same as the depth of thedepletion regions. Referring now to FIG. 9, a dielectric layer, such as a SiO2 ("oxide"), silicon nitride ("nitride"), silicon oxynitride, silicon carbide, silicon oxycarbide, or any other dielectric 301 is deposited on the wafer, preferably utilizing theCVD-type process described above. Deposition precursors include SiH4, SiH3(CH3), SiH2(CH3)2, SiH(CH3)3, Si(CH3)4, TEOS, TMCATS, OMCTS, O2, CO, CO2, NO, He, Ar, N2, NH3, or any othergas known to those skilled in the art. Alternately, the dielectric may be an organic film such as SiLK™, PAE, paralyene, BCB, or a polyamide film deposited by either a CVD-type process or a spin-on process. It is patterned so that it covers portionof the metallic electrodes 301A and 301B within the depletion regions. Patterning is reformed through a combination of photolithography and plasma etching as described above. It is desirable that the thickness of the dielectric material coincide withthe depth of the depletion regions. As shown in FIG. 9B, since the thickness of the dielectric 301 is about the same as that of the first metal, the top surface of the metal deposited outside the depletion regions is substantially coplanar with the topsurface of the dielectric material 301B that is deposited on top of the metal within depletion regions 102A and 102B. In FIG. 10, insulation layer 410, e.g., a silicon-based oxide film is deposited and planarized using conventional CMP. Through vias are formed in areas where interconnects are expected by etching a hole 402A-402B and 403A-403B in the insulatingmaterial, stopping at the first metal wiring utilizing photolithography and plasma etching described above. Once the vias are etched, proper liners and metal materials are deposited and subsequently removed utilizing CMP, forming the metal studs. Metalstuds 402A and 402B eventually become part of the post to form the hinges. Studs 403A and 403B form the interconnection links to the bottom electrode pair. In FIG. 11, the second metallization layer (m2) is deposited in a similar manner to the first metallization layer (m1). Metal wiring is formed using a conventional "mandrill" etching or Damascene process, as described above. Wiring 501C isprepared to link the two lower electrodes, while metal wiring 501A will link the upper electrode pair (not yet formed). Wiring 501B forms the conductive plate and the two holding rings for the hinges. Portions of 501B are also used to form the hingeposts. After etching, the conductive plate is still sitting on top of insulating material 410. The space between the inner edge of the holding ring of the conductive plate and the outer edge of the post column is, preferably, the same as the ground rule (defined as the minimal printable pattern size). Of course, it is desirable to providea space larger than the minimal ground rule to allow the MEMS switch plate to move freely. In FIG. 12, another dielectric layer 610 is deposited on top the second metallization layer (m2) utilizing the same method previously described for layer 301. Once again, vias are formed on top of 502A and 502B, respectively, forming posts 602Aand 602B. Likewise, interconnects 601A and 601B on top of metal wiring 501A provide a link to the upper electrode pair (not yet formed). In the present example, second metal (m2) is advantageously used to provide interconnections to the lower or upperelectrodes, allowing voltage to be applied to the upper (or lower) electrode pairs via second metal (m2). Of course, first metal (m1) can also be used to connect voltage to the lower electrodes and third metal (m3) to provide a link to the upperelectrodes, utilizing for this purpose photolithography and plasma etching, as previously described. Referring to FIG. 13, dielectric layers 701A and 701B, preferably made of nitride, oxide, and the like, are deposited and patterned with photolithographic and plasma etching to form the upper electrode. Dielectric pads are constructed in thesame locations as the depletion regions to serve as insulators for the upper electrodes. In FIG. 14, a third metallization (m3) layer is deposited, in a manner similar to the deposition of first and second metal (m1 and m2), preferably by way of conventional etching. More specifically, metal 801A and 801B are formed on top of posts602A and 602B, respectively, forming the post caps. Similarly, metals 802A and 802B, also part of third metal (m3) are formed to become the top electrode pair. Metals 803A and 803B are respectively deposited on top of 701A and 701B to provide the topmetal for the interconnections. As previously shown in FIG. 11B, the conductive plate 501B is designed to ultimately move vertically, attracted by the upper and lower electrode pairs, shorting the two top wires 803A and 803B at the exclusion of theelectrodes themselves, due to the presence of second dielectric 701A and 701B (FIG. 13B). Similarly, the conductive plate moves downward attracted by the lower electrode pair, shorting the two lower interconnect wires 202A and 202B (FIG. 8A) at theexclusion of the electrodes themselves, due to the presence of the first dielectric material. In FIG. 15, a final dielectric layer 910 is deposited as a blanket deposition on top of the structure thus formed, and planarized, preferably by CMP, in order to seal the hinge switch. A top cap material 920 is then deposited on top of the finaldielectric layer. This top cap is advantageously made of Al2O.sub.3, Ta2O.sub.5, yitria, silicon nitride, intrinsic or lowly-doped polysilicon or amorphous-silicon and the like. The requirement is that top cap 920 exhibit an etch selectivitywith respect to the final dielectric layer 910 greater than 2:1 and, preferably, greater than 10:1. Referring to FIG. 16, the cavity is provided having proper width (X) and length (Y) dimensions. X should preferably be 2(d1) wider than the MEMS switch in the horizontal dimension, while d1 is the margin to ensure that the post areas are withinthe cavity. Y should preferably be 2(d2) longer than the MEMS switch in the vertical dimension, d2 being the margin to ensure that the entire plate is within the cavity. The margins d1 and d2 should be at least equal to the minimal ground rules orminimal printable dimensions. In the last step, the top cap dielectric material deposited on the topmost dielectric layer is patterned using photoresist. The cap is then opened using Cl2 plasma. Subsequently, the insulating material is etched away using the cap layeras a hard mask until the bottom stop etch layer is exposed. When all the insulating material within the cavity has been removed, the conductive plate drops from its original location marked in dashed shape to make contact with the first metal (m1). Undercutting `k` is controlled by first using a directional etch to remove the exposed insulating material, and then using an isotropic etch to remove the hidden material underneath the metal. The maximum undercutting should preferably beone-half the size of the widest metal to ensure that all the insulating material between the various metal layers within the cavity is totally removed. Thus, a suitable choice for dielectric films allows insulating material to be easily removed in thecavity early definition phase is critical. Examples of cavity formation include the use of an aqueous HF solution to remove silicon dioxide-based dielectrics or an oxygen-based plasma etch to remove organic based dielectrics (e.g., SiLK™) Preferable dimensions for a MEMS switch thus described are listed hereinafter: Width: W=5-20 um; Length: L=1-10 um; and Height: H=2-10 um. While the present invention has been particularly described, in conjunction with a specific preferred embodiment, it is evident that many alternatives, modifications and variations will be apparent to those skilled in the art in light of theforegoing description. It is therefore contemplated that the appended claims will embrace any such alternatives, modifications and variations as falling within the true scope and spirit of the present invention. Field of SearchSwitch makingAssembling formed circuit to base Manufacturing circuit on or in base Contact or terminal manufacturing By assembling plural parts Polarity-responsive With centering or aligning or guiding means Including device responsive to nonelectrical signal Physical stress responsive Lateral series connected array |


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TALKING POINTS FOR THE FINANCING PRESS CONFERENCE May 5, 1993 Today, we are announcing the terms of the regular Treasury May midquarter refunding. I will also discuss Treasury financing requirements for the balance of the current calendar quarter and our estimated cash needs for the July-September quarter. 1. We are offering $35.0 billion of notes and bonds to refund $23.9 billion of privately held notes maturing on May 15 and to raise approximately $11.1 billion of cash. The three securities are: -- First, a 3-year note in the amount $16.0 billion, maturing on May 15, 1996. This note is scheduled to be auctioned on a yield basis on Tuesday, May 11, 1993. The minimum purchase amount will be $5,000. Purchases may be made in multiples of $1,000. -- Second, a 9 3/4-year note in the amount of $10.75 billion, a reopening of the 6 1/4% note maturing on February 15, 2003. This note is scheduled to be auctioned on a yield basis on Wednesday, May 12, 1993. The minimum purchase amount will be $1,000. -- Third, a 29 3/4-year bond in the amount of $8.25 billion, a reopening of the 7 1/8% bond maturing on February 15, 2023. This bond is scheduled to be auctioned on a yield basis on Thursday, May 13, 1993. The minimum purchase amount will be $1,000. 2 2. We are announcing a cash management bill in the amount, of $15.0 billion to mature on September 23, 1993. This bill will be auctioned at noon on Thursday, May 13 and will settle on May 17. The minimum purchase will be $10,000. Additional purchases may be made in multiples of $1,000. 3. On January 13, 1993, the Treasury announced that it would call the 7% bond of 5/15/93-98 and the 4 1/8% bond of 5/15/89-94 on May 15. The 5-year notes announced on January 21, 1993 included an amount sufficient to hedge the call of the $462 million of privately held 7% bonds. The $73 million of privately held 4 1/8% bonds of May 15, 1989-94 will be repaid from available funds. 4. As announced on Monday, May 3, we estimate a net market borrowing need of $37 billion for the April-~une quarter. The estimate assumes a $35 billion cash balance at the end of June. Including this refunding and the cash management bill being announced today, we will have raised a net $25.5 billion of the $37.0 billion in market borrowing needed this quarter. This net borrowing was accomplished as follows: -- $4.0 billion of cash from the 7-year note that settled -- $3.5 billion of cash from the 2-year note that settled April 30; -- $11.9 billion of cash from the 5-year note that settled 3 April 30; -- a net paydown $8.9 billion paydown in the sales of regular weekly bills, including the bills announced yesterday; -- $3.9 billion of net cash from the cash management bills; and -- $11.1 billion of cash from the refunding issues announced today. The $11.5 billion to be raised in the rest of the April-June quarter could be accomplished through sales of regular 13-, 26-, and 52-week bills, and 2-year and 5-year notes at the end of May and June. An additional cash management bill may be needed to cover the low point in the cash balance in June. 5. We estimate Treasury net market borrowing needs to be in the range of $90 to $95 billion for the July-September quarter, assuming a $40 billion cash balance on September 30. Beginning with the July-September estimates, the borrowing estimates include significant outlays for the Resolution Trust Corporation. These outlays are primarily for working capital based on both the freeing up of unallocated loss reserves for resolution purposes and the outlook for RTC funding legislation. 6. We will accept noncompetitive tenders up to $5,000,000 for each of the notes and bonds. The 9 3/4-year notes and 29 3/4-year bonds being announced today are eligible for 4 conversion t o STRIPS (Separate Trading of Registered I n t e r e s t and Principal o f S e c u r i t i e s ) and, accordingly, may be divided i n t o separate i n t e r e s t and principal components. 7. The August midquarter refunding press conference w i l l be held on Wednesday, August 4 , 1 9 9 3 .
views: | 15 |
posted: | 6/19/2008 |
language: | English |
pages: | 4 |

subset: commoncrawl


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Cottage | 3 bedrooms | sleeps 6
Key Info |
Come and stay with us and allow yourself to escape from the everyday stresses and unwind in the tranquil environment of the Derbyshire Peak District. Brosterfield Farm is situated in a beautiful country setting, surrounded by fields and excellent walking from the door.
Foolow Village is the perfect location for a relaxing holiday and to take advantage of all that the Peak District and Derbyshire has to offer.
We are located just a short drive from Bakewell and the famous attractions of Chatsworth House and Haddon Hall, the backdrop of many feature films.
There are endless walks and attractions for both children and adults
Accommodation can sleep an extra 2 making it 8 guests if the sofa bed is used.
Size | Sleeps up to 6, 3 bedrooms |
Will consider | Corporate bookings, Short breaks (1-4 days) |
Access | Car not necessary |
Nearest Amenities | 3 km |
Nearest travel links | Nearest airport: Manchester 40 km, Nearest railway: Grindleford 4 km |
Family friendly | Great for children of all ages, Suitable for people with restricted mobility |
Notes | Pets welcome, No smoking at this property |
Features and Facilities
Luxuries | Log fire, DVD player |
General | Central heating, TV, Satellite TV, Wi-Fi available |
Standard | Kettle, Toaster, Iron, Hair dryer |
Utilities | Clothes dryer, Dishwasher, Cooker, Microwave, Fridge, Freezer, Washing machine |
Rooms | 3 bedrooms, 2 bathrooms of which 1 Family bathrooms and 1 En suites |
Furniture | 1 Sofa beds, Single beds (2), Double beds (2), Cots (1), Dining seats for 8, Lounge seats for 6 |
Other | Linen provided, Towels provided, High chair |
Outdoors | Private garden, BBQ |
Access | Parking |
Further details indoors | Open Plan Ground Floor The living and dining area has oak flooring and under floor heating throughout the ground floor. It has a wood burning stove, with a complimentary basket of logs, (further logs and kindling wood are supplied at an additional cost). There is a flat screen television and DVD player. The dining area has an extending dining table, which can accommodate up to 8 people, perfect if both cottages are taken as a single booking. Kitchen It is an extremely well equipped kitchen, with oak cabinets, granite worktops, Belfast sink, tiled floor with under floor heating. Facilities include: Double Range Oven Dishwasher Fridge freezer Toaster Microwave Ironing facility High quality cutlery, pans and accessories Utility Room This room is perfect for housing shoes, coats and generally good storage space. It accommodates the washing machine. Master Bedroom King Size bed which will be made with crisp white bed linen. There is an integrated wardrobe. Chest of drawers with dressing mirror. The en-suite bathroom has a walk in power shower and travertine tiles with under floor heating. Bedroom Two This room is light and airy and can be either made into a twin or a double. It has views overlooking the garden. This room can accommodate a travel cot. Bedroom Three This is a twin room and has views overlooking the courtyard area. Equipped with full size twin beds. Family Bathroom This room has been finished to an exceptionally high stand using travertine tiles and has under floor heating. Heated towel rail. Large curved bath with overhead shower. Garden Area The cottage has a large garden with patio area and garden seating. Private car parking. |
Further details outdoors | We are situated down a long drive |
The Heart of England/Peak District
The Peak District is famous for the stunning scenery, views and walks.
Chatsworth House, Haddon Hall, The Blue John Caverns, Monsal Trial and Tissington Trial are just a few of the amazing attractions and sights and places to visit.
There is an abundance of activities for children e.g horse riding, theme parks, paint a pot, outdoor swimming, farmyards, underground caverns.
Bakewell is famous for the Bakewell pudding and is an historic old market town, with lots to see and do.
Every Monday is the farmers markets and markets in the heart of the town.
There is an excellent park with a children's water play area.
There is a an excellent pool with a weekly activity children's fun session with huge inflatable slides.
There is a lovely selection of shopping, cafes and restaurants.
Just down the road is Haddon Hall and Chatsworth House.
Guest reviewsPowered by TripAdvisor
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21 Oct 2013
"Luxurious stay"
Great place to stay as a base for our climbing course in the Peaks. we arrived late on Friday to find warm, friendly cottage, lights on, beds made, lemon cake awaiting. Didn't spend much time in … More
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This Saturday is Winter Jam! Cost is $10 at the door. You may want to bring extra money for concessions, artist tshirts, CD's etc.
We will be leaving from Shiloh at 3pm (NOTE THIS TIME IS EARLIER THAN WHAT WAS PREVIOUSLY ADVERTISED)
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Ceo Reference:
Jim Jackson
Jim Jackson is The Essex Group's CEO. Their CEO/President is Jim Jackson. Their Lead411 profile is categorized under the industry. If you're checking for The Essex Group email addresses, these are also available on Lead411 with the @theessexgroup.com email addresses and possibly Jim Jackson's email. The Essex Group is based in Westbrook, CT. You can also get Jim Jackson's linkedin info, twitter data, and biography on their Lead411 profile. Their information is filed under the category.
Similar Companies:
2Plus , Inc.
2plus , Inc., a business led by CEO Unknown, is part of the industry. 2plus , Inc. emails with the @2plus.com, you can check their Lead411 profile. They hold their main office in Bloomfield, CT and more data like cfo contacts and linkedin data can be found within our profiles.
AAA Umbrella Co
Want to know how to get in touch with them? Lead411 has the email addresses of Aaa Umbrella Co's top officials for the company domain @rainmenusa.com. Aaa Umbrella Co is a company centred in Bridgeport, CT and our profiles could include more stats like cfo people, linkedin contacts, and facebook pages.
Abbey Road Associates LLP
This includes Abbey Road Associates Llp email addresses with the @abbeyroadassociates.com domain, contacts, linkedin info, cfo employees, and facebook profiles. True Baby Love is a business with its headquarters based in Wilton, CT.
Company Directory > The Essex Group


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Take the weather with me:
Mostly cloudy with temperatures warming into the low to middle 50s. Winds WNW at 10 to 15 mph. Hourly Details
Overcast. High near 55F. Winds WNW at 10 to 20 mph.
Mostly clear. Low 43F. Winds WNW at 10 to 15 mph.
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98 Things a Woman Should Do in Her Lifetime (Paperback)
As seen in Your Health Monthly
Do things you've never thought of doing -- or the things you secretly wish to do. Author Rebekah Shardy challenges the open-minded women of this new millennium to seek out new experiences. It's the perfect gift for any woman, whether she has everything or not! 98 Things a Woman Should Do in Her Lifetime invites the reader to enjoy simple pleasures brimming with compassion, humor, and spirituality while saving a trip to the therapist's office. A guidebook that can help a woman live out her adventurous fantasies with outrageous style.
Among the 98 nuggets of inspiration: Sing to a child. Learn a few choice phrases in French or Russian to use when flirting or angry. Create an altar in honor of your female ancestors and mentors. Interview three plastic surgeons and tell them why your body's flaws are precious to you. Whisper your darkest secrets to a beloved tree. Forgive the unforgivable.
128 pages. Paperback book measures 3.7" x 3.4 (9.3 x 8.6cm).
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Moderators: Cyber Bishop, Supreme Convoy, robofreak, Counterpunch
Jeep! wrote:Why do I imagine Dead Metal sounding exactly like Arnie?
Blurrz wrote:10/10
Leave it to Dead Metal to have the word 'Pronz' in his signature.
Va'al wrote:PCCs are not only desirable, they are adorable.
Fanboy wrote:You need to see the figure, feel the figure , lick the figure , be the figure,
And only then can you love mp 01 the way I have.
Jeep! wrote:Why do I imagine Dead Metal sounding exactly like Arnie?
Blurrz wrote:10/10
Leave it to Dead Metal to have the word 'Pronz' in his signature.
necr0blivion wrote:I like the design of iGear's Ironhide better. This version is still so much better looking than Classics/Henkei, but not sure if it's needed (and the proposed 7 - 10 weapons) when a new version is already coming out (regardless of the delays).
Trailblazer, Blitzwing, and so many other characters are still waiting for a proper release.
Autobot Genocide wrote:And the award for the biggest package on cybertron 2012 goes to ....... Classics Ironhide! .
El Duque wrote:Quite a firestorm I started here
amcgrath929 wrote:X-Transbots, I don't mean to sound like a dick, but maybe you should stick to small upgrades or weapon sets.
craggy wrote::lol: HAHA Blurrz! Would his function be "Gunner"?
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Berta..., fast eddie 42, Moxette, and 1 other people added this photo to their favorites.
these series of the plage give that very gloomy look. Kind of like that eerie feeling from Ray Bradbury's 'something wicked way this comes'!
in my collection you'll see the plage in sunlight. And also one taken from the 6th floor from an apartment in the Silodam.
I've enjoyed your Onassis pics too!
doeg! -
thanks Ekusie - I wandered past while it was still closed, saw the gloomy sky and started shooting pictures through the fence. One of the guys who works there noticed me and invited me in so I had the entire place to myself which made it nice and desolate. Lovely place, will be sorry to see it close at the end of this week.
Ah! I was wondering why it looked so empty. But then again in the early hours of the afternoon, not too many people go there.
Yeah, shame that it's gonna close. : (
the Plage has this unpretentious, cozy vibe. Adults and children can all have fun!Do you take many of your photos in the early morning hours?
Yes...whenever the light is good I try to get out as early as possible...the colours are so much more beautiful @ that time. From 11.30 am or so the light tends to become too harsh, then you have to wait until 4pm or so before you can take some decent pictures again...
Een mooie voor:
www.flickr.com/groups/fellini/ -
Lijkt wel beeld uit "Carnivale", lekker spooky.


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It doesn't open until next summer, but I'm already excited about this one.
It doesn't open until next summer, but I'm already excited about this one.
One of the most eagerly anticipated movies of the year will have a record-breaking extended trailer debut this Sunday November 1, when it debuts on the world's largest video display — Cowboy Stadium's Diamond Vision Screen – while millions of […]
Tomorrow night, I'll be interviewing Michael Moore at a premiere screening of his new film, "Capitalism: A Love Story." It comes 20 years after his "Roger & Me" changed the rules for documentaries in every category. He did not pretend […]
In every corner of the world, there's one question that can never be definitively answered, yet stirs up equal parts passion, curiosity, self-reflection and often wild imagination: "What is God?" Filmmaker Peter Rodger explores this query in the provocative non-fiction […]
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We are excited to release new functionality to enable a 1-click import from Google Code onto the Allura platform on SourceForge. You can import tickets, wikis, source, releases, and more with a few simple steps. Read More
Revision: 13016 http://xbmc.svn.sourceforge.net/xbmc/?rev=13016&view=rev Author: topfs2 Date: 2008-05-14 16:44:40 -0700 (Wed, 14 May 2008) Log Message: ----------- Created another branch for Alphabuilds Added Paths: ----------- branches/alpha2.1a2-candidate/ Copied: branches/alpha2.1a2-candidate (from rev 13015, branches/linuxport) This was sent by the SourceForge.net collaborative development platform, the world's largest Open Source development site.


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Amazon is offering Lionel Trains Pre-War Ornament Gift Box for $6.99 (reg. $24.99) Item qualifies for FREE Super Saver Shipping on orders over $35.00 or FREE 2 Day Shipping with Amazon Prime!
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New restaurant/lounge concepts to debut in The Sanctuary
- Anjali Fluker
- Senior Staff Writer- Orlando Business Journal
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A new local restaurant group plans to bring two restaurant/lounge concepts to The Sanctuary building in Thornton Park.
Orlando-based Aura Florida Lounges LLC and Alena Hospitality plan to debut Lotus, a farm-to-table fusion concept, on Aug.1 and sister restaurant Honey in mid-August at the downtown condo tower. Both restaurants are targeted to the 30-plus crowd who are seeking "fine dining in a big-city atmosphere reminiscent of South Beach or Las Vegas," said Aura Florida spokeswoman Julie Morris in a prepared statement.
The restaurants also are slated to replace the Prickly Pear and Nick's Italian Kitchen, both of which have posted messages saying they are no longer taking reservations. Just a few months ago, Prickly Pear said it was shifting to event/banquet space.
Be sure to check back for more details on this.
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We most definitely are! Unfortunately it won't be in until next Thursday
What I recommend you do is place your order without the DTH, and in the comments section request that they add it to your order and state that you are aware it won't be in stock for another week. This will delay your order until it arrives (Approx. next Thursday), but this way it will be shipped for free.
There's a slight chance if they're having a really good day they might ship it for free like you requested afterwards, but that would be an exception and not the standard. The free shipping is a discount we're able to offer by putting all your items into one order which helps reduce shipping charges. Imagine trying to ship it in a bunch of packages as the items came in


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Related Products
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PDUMNH15 Monitored 1U Rackmount PDU supports 15A peak capacity at 120V (agency de-rated to 12 amps continuous). Includes attached 5-15P input cordset and 8 5-15R outlets. Visual and remote current monitoring tracks real time output current level. Supports 1U horizontal rackmount installation with included mounting brackets. Monitored PDU systems support real-time remote monitoring via secure web, SNMP or Telnet interface and custom notification of user-specified remote conditions via email and SNMP trap. PDU power consumption in amps is displayed locally via front panel lighted digital display and can be monitored remotely to warn of potential overloads before critical IT mains breakers become overloaded. Advanced configurations support in-rack environmental monitoring with optional ENVIROSENSE temperature / humidity probe and rack access notification for up to 4 SRSWITCH or user supplied contact-closure sensors. |
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Gene Weltfish
Gene Weltfish (Born Regina Weltfish) (August 7, 1902 – August 2, 1980) was an American anthropologist and historian working at Columbia University from 1928 to 1953. She studied with Franz Boas and was a specialist in the culture and history of the Pawnee people. Her 1965 ethnography The Lost Universe is considered the authoritative work on Pawnee culture to this day.
She is also known for the 1943 pamphlet for the U.S. Army called The Races of Mankind, which she co-wrote with Ruth Benedict, meant to teach military personnel about the cultural differences between the peoples of the world. In the text they argued that perceived differences between the races are cultural rather than biological. Among the data used in the text was an IQ study that had found higher scores among some northern Blacks than among some southern Whites. The pamphlet was not widely circulated within the army, and eventually it was banned as subversive. Weltfish was engaged in social activism and attracted the attention of the FBI which suspected her to be a communist. In 1952 and 1953 she was called in for questioning by two of the committees dedicated to investigating "un-American activity" during the 1950s red scare. Two weeks before appearing at the 1953 hearing in which she refused to answer questions from Roy Cohn and Joseph McCarthy as to whether she was a communist, her 16 year appointment at Columbia was terminated, and she was unable to find an academic position for nearly a decade.
One of two daughters born into a German Jewish family in New York's Lower East Side, Gene Weltfish grew up speaking German as her first language, taught by a German governess hired by her grandfather. Her father, to whom she was very close, died when she was 13. Encouraged by her grandmother, she went to the synagogue to say the kaddish for him, an honor and responsibility traditionally reserved for a son.[1] Without a father, the family was in a difficult economic situation. Because her father had died without a will, his estate was kept in trust by the state, which required formal notarized petitions for every disbursement. To help the family, at 14 Weltfish started working as a school clerk while attending high school in the evenings.[1]
Graduating from high school in 1919, she entered Hunter College where she majored in journalism, then transferred to Columbia University's Barnard College. At Barnard she minored in philosophy under John Dewey. She graduated from Barnard in 1925 and enrolled in Columbia's graduate program in anthropology. She had already taken courses with Franz Boas during her senior year and continued to study with him as her adviser. She married fellow graduate student Boasian anthropologist and Siouanist, Alexander Lesser, and they remained married for 15 years. Their daughter Ann was born in 1931.[2] The two did their first field work together in Oklahoma, working on Siouan kinship systems. Initially not sure which indigenous tribe to work with for her dissertation, Weltfish met a Henry Moses of the Pawnee tribe in New York and decided to do her work with his community. She arrived in the mostly monolingual community with no prior knowledge of the Pawnee language, but during her studies she picked it up. She focused on the study of aesthetics and craftsmanship, learning the art of basket-making practiced exclusively by Pawnee women. Her doctoral dissertation from Columbia was titled The Interrelation of Technique and Design in North American Basketry. She completed her dissertation in 1929, but did not formally receive her Ph.D. until 1950, when Columbia modified its policy requiring the costly publishing ($4,000) of dissertations and began accepting mimeographed theses as well.[1]
Career at Columbia University[edit]
In 1935 she was invited by Boas to teach at Columbia, where she stayed on a year-to-year appointment until 1953.[3] Among her students at Columbia was Eleanor Leacock.[4] Columbia University never granted her tenure, most likely because of a long standing practice of discrimination against tenuring women. Once Ruth Benedict, the first woman to ever have achieved tenure at Columbia,[5] intervened on her behalf at a board meeting, when the trustees were considering terminating her employment.[6]
The Races of Mankind[edit]
One of Weltfish's minor works, cowritten with Ruth Benedict, had a surprisingly great effect. Published in 1943, The Races of Mankind was a pamphlet intended for American troops. It set forth, in simple language with cartoon illustrations, the scientific case against racist beliefs.[7] The publication of this pamphlet and the subsequent political furor that it caused, when it was decried as a piece of socialist propaganda, attracted the attention of anti-Communist authorities.[8]
The pamphlet represented the Boasian way of thinking about race which later became the standard view in anthropology and was endorsed with a 1948 UNESCO declaration, but at the time this was politically controversial, especially in the American South, where Jim Crow was still in rigor.[9] Weltfish herself described her motivations for writing the pamphlet:
"During the first four years of my graduate training at Columbia, Hitler rose to power in Germany, bolstering his heinous operations with racist theories developed from distorted anthropology. The books of Franz Boas were burned in Germany. In 1942, after [Boas'] death, Ruth Benedict, my senior colleague in the Anthropology Department, and I felt that we should carry the banner on the race question. In 1943, Ruth Benedict and I collaborated on a pamphlet, "The Races of Mankind," published by the Public Affairs Committee. The pamphlet was originally written at the request of the U.S.O. for distribution to the men in the armed forces who had to fight side by side with allies such as the Huks in the Philippines and the Solomon Islanders. "The Races of Mankind" was used, not only for orientation by the army, but in the de-Nazification program in Germany after the war."
—(Memo by Weltfish, October 24, 1967, quoted in Pathe 1989:375)
The most controversial statement was the mention of a set of IQ tests administered to the American Expeditionary Force (AEF) in World War I, in which "Southern Whites" scored below "Northern Negroes". Weltfish and Benedict argued that "The difference....[arose] because of differences of income, education, cultural advantages, and other opportunities," since southern schools spent only a fraction of the amount spent on education in the North. This was the statement that led to a general outcry in the military. The bulk of the pamphlet was dedicated to explaining that perceived differences in group mental abilities vary in accordance with social and cultural factors, not biological ones.[9]
Far-right political groups in the US and elsewhere still consider Weltfish's work to be part of a conspiracy by Boas and his students to eliminate the study of race in psychology and anthropology in "preparation for the defeat of 'White Civilization' by the Jews".[10]
Blacklisted during the McCarthy period[edit]
In 1953 Weltfish lost her position at Columbia University, after 16 years of employment as an adjunct lecturer.[11] The FBI had been interested in her political activities for some time, and in 1944 the head of the Anthropology department Ralph Linton, who had replaced Boas in 1937, reported her to the FBI for alleged communist sympathies. The FBI investigated Weltfish's activities noting her political engagement in the Congress of American Women, her signatures on civil rights petitions, and her appearance on the radio station WNBC.[8] The Congress of American Women, of which Weltfish was once president, had been placed on a list of subversive organizations in the 1940s when they criticized some of President Truman's foreign policies.[12]
In 1952 Weltfish was quoted in the Daily Worker as repeating a claim made by Soviet critics that the US Army had used germ warfare in the Korean War. Shortly thereafter she was subpoenaed to appear before the McCarran Senate Judiciary Committee to Investigate the Administration of the Internal Security Act, where she was questioned in the fall of 1952. She refused to answer questions about her political affiliations, but when asked about the Daily Worker article she said that she had been misquoted.[13][14]
In 1953 Senator Joseph McCarthy's Senate Committee on Governmental Operations was conducting hearings to determine whether un-American literature was being purchased by American libraries. Weltfish was called in for questioning regarding her role in writing the pamphlet The Races of Mankind, which had been declared subversive. Two weeks before she was scheduled to appear, the trustees of Columbia informed Weltfish that her employment would not be renewed at the end of the year.[15] The university stated that the reason for her dismissal was the introduction of a new policy against the prolonged use of annual contract-based lecturers,[16] although other lecturers affected by the change were advanced to tenured positions rather than being dismissed. Weltfish herself maintained that she was fired because she was a woman. Later historians have concluded that she was in fact fired because the trustees saw her as a political liability in the politically charged environment of the red scare.[15]
On April 1, 1953, she was questioned by the United States Senate Subcommittee on Internal Security staffed by Roy Cohn and consisting of Senators Joseph McCarthy, Karl Mundt, John McClellan and Stuart Symington. Weltfish responded negatively to the committee's demands that she name colleagues with communist sympathies. Asked about her own political position she refused to answer, invoking the Fifth Amendment.[17] Weltfish simply noted that "she thought of herself as a good American and acted on issues as her conscience and knowledge dictated".[12] When asked about the nature of the claim made in the pamphlet that some northern blacks had scored higher on intelligence tests than southern whites, Weltfish responded that that particular data set came from the US Army's own records.[18]
Having lost her employment at Columbia, Weltfish was effectively blacklisted and remained unable to find a teaching position for the next eight years.[12] She did receive some research support from the Nebraska Foundation and Bollingen Foundation which allowed her to work on museum materials from the Pawnee collection at the University of Nebraska. This she used to write the book The Lost Universe about Pawnee history and ethnography, published in 1965.[19]
Later years[edit]
In 1961 she found employment at Fairleigh Dickinson University, where she worked until 1972, having reached the mandatory retirement age of 70.[4] After her retirement from Fairleigh Dickinson University, Weltfish continued teaching, as a part-time faculty member at the New School for Social Research and Manhattan School of Music and as a visiting professor at Rutgers University, where she participated in a new program in gerontology.[4] She died in August 1980.[4]
Selected publications[edit]
- 1930a. Prehistoric North American Basketry Techniques and Modern Distributions. American Anthropologist 32:454-495.
- 1930b. Coiled Gambling Baskets of the Pawnee and Other Plains Tribes. Indian Notes and Monographs 7:277-295. Museum of the American Indian, Heye Foundation.
- 1931a. Pottery Implements of the Ancient Basket-Makers. Plains Anthropologist 33:263.
- 1931b. White-on-red Pottery from Cochiti Pueblo. Plains Anthropologist 33:263-264.
- 1932a. Preliminary Classification of Prehistoric Southwestern Basketry. Smithsonian Miscellaneous Collections, Vol.87, No.6.
- 1932b. Problems in the Study of Ancient and Modern Basket-Makers. American Anthropologist 34:108-117.
- 1932c. Composition of the Caddoan Linguistic Stock. (Coauthor Alexander Lesser) Smithsonian Miscellaneous Collections, Vol.87, No.6.
- 1936. The Vision of Fox Boy, a South Band Pawnee Text, with Translations and Grammatical Analysis. International Journal of American Linguistics 9:44-75.
- 1937. Caddoan Texts: Pawnee, South Band Dialect. Publication of the American Ethnological Society, Vol.17.
- 1943. The Races of Mankind. (Coauthor Ruth Benedict) The Public Affairs Committee, New York.
- 1953. The Origins of Art. Bobbs-Merrill, Indianapolis, Indiana.
- 1956. The Perspective for Fundamental Research in Anthropology. The Philosophy of Science 23:63-73.
- 1958a. The Linguistic Study of Material Culture. International Journal of American Linguistics 24:301-311.
- 1958b. The Anthropologist and the Question of the Fifth Dimension. In Culture in History, edited by Stanley Diamond. Columbia University Press, New York.
- 1959. The Question of Ethnic Identity, an Ethnohistorical Approach. Ethnohistory 6:321-346.
- 1960. The Ethnic Dimension of Human History: Pattern or Patterns of Culture? in Selected Papers, Fifth International Congress of Anthropological and Ethnological Sciences, edited by Anthony C. Wallace. University of Pennsylvania Press, Philadelphia.
- 1965. The Lost Universe. Basic Books, New York.
- 1971. The Plains Indians: Their Continuity in History and Their Indian Identity. In North American Indians in Historical Perspective, Edited by Eleanor Burke Leacock and Nancy Oestreich Lurie. Random House, New York.
- ^ a b c Pathe, R.A. (1988). "Gene Weltfish (1902-1980)". In U. Gacs, A. Khan, J. McIntyre, and R. Weinberg (Eds.), Women Anthropologists: A Biographical Dictionary (pp. 372-381). New York: Greenwood. ISBN 9780313244148. p. 373
- ^ Ogilvie, Marilyn; Harvey, Joy, eds. (2000). "Weltfish, Gene". The Biographical Dictionary of Women in Science: L-Z. Taylor & Francis. pp. 1364–6.
- ^ Pathe (1988), p. 374
- ^ a b c d Pathe (1988), p. 378
- ^ Benedict received tenure in 1938, after having been an assistant professor since 1931, much longer than any man would have had to wait, and she only received a full professorship in 1948 months before her death
- ^ Silverman, Sydel. (2004). Totems and Teachers: Key Figures in the History of Anthropology. Rowman Altamira p. 118
- ^ Benedict, R. and Weltfish, G. (1943) The Races of Mankind. New York: The Public Affairs Committee. Inc.
- ^ a b Price, David H. (2004). Threatening Anthropology: McCarthyism and the FBI's Surveillance of Activist Anthropologists. Duke University Press p. 112
- ^ a b Pathe (1988), p. 375
- ^ Winston, A.S. (2001) "The Boas Conspiracy": The history of the behavioral sciences as viewed from the extreme right. In History & Theory of Psychology Evening Colloquia 2000-2001 announcement. Available: [1]
- ^ Price 2004:132 notes that Pathe 1988 is in error when he states that she was fired in 1952
- ^ a b c Pathe (1988), p. 377
- ^ Price (2004), pp. 123-4
- ^ Grutzner, Charles (September 26, 1952). "Senate Red Inquiry 'Visitor' Put on Stand as Spy Suspect". The New York Times.
- ^ a b Price (2004), pp. 131-2
- ^ Lissner, Will (April 1, 1953). "Columbia is Dropping Dr. Weltfish, Leftist". The New York Times.
- ^ Bosmajian, Haig. (1999). Freedom Not to Speak. NYU Press. pp. 134-5
- ^ Price (2004), pp. 127-8
- ^ Price (2004), p. 133


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Age 53
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By Brad Hall / Nighttime Editor
Spending seven years in Lexington living close to the University of Kentucky campus, I got used to the noise of traffic and college kids yelling during the wee hours of the morning.
Now that I live in the outskirts of Corbin, things are a little different. Typically, there is very little traffic after dark, and even fewer people are found walking around on the streets.
So when you hear a strange noise at 4 a.m. in the morning, it might startle you a little.
Thus was the case early Saturday morning last weekend.
Due to my second-shift work schedule, I have been a night owl for many years. And since we've been married, my wife, Carmen, has become one too.
But we are usually in bed by 2 a.m. at the very latest.
So we had been asleep that night for about two hours when this odd noise came from the direction of our laundry room.
I sat up quickly from my pillow, and immediately turned to Carmen asking her if she heard it.
When she said she heard it too, I got up to investigate.
I walked towards the laundry room and thankfully found no signs of an intruder.
But what I did find may have been more surprising.
The washing machine door had been left open, and an entire bag of Puppy Chow had been poured in.
Then I heard the faint meow of our cat, Lexie, from the other room. I also noticed her bowl of cat food was empty, and I put two and two together.
She had gotten so hungry that she climbed up on to the dryer where we keep the dog and cat food, and knocked the bag of dog food into the washing machine.
And I'm sure the noise it made scared her like it did with me, so she jetted off from the crime scene.
On normal circumstances, I probably would have scolded her for waking me up like that.
But I remembered that when we went to bed that night, she was meowing a lot from outside our bedroom. I just ignored her because it was late and I just wanted to go to sleep.
But she was actually trying to tell us that she was hungry, and there was no cat food in her bowl.
So if I had listened to her from the start, and not neglected her, I wouldn't have gotten myself into that mess to begin with.
Likewise, when we don't listen to what God tells us to do, and when we neglect Him, our lives might end up in a mess.
Just like the neglect caused Lexie to grieve, God grieves because He is our heavenly Father who desires closeness with His children.
And when we ignore God, we miss out on what is best for us. We shortchange ourselves out of fulfilling the purpose for which He created us — glorifying His holy name.
Hosea 4:6 says, "My people are destroyed for lack of knowledge; because you have rejected knowledge, I reject you from being a priest to me. And since you have forgotten the law of your God, I also will forget your children."
This is why it is so important to listen when God calls upon us.
It was quite a mess I got myself into when I didn't listen to my cat.
It would be an even worse mess if I ignored God, and got forgotten by him.
Brad Hall is the nighttime editor for the Times-Tribune. He can be reached at email@example.com. You can also visit his blog at hallthingsconsidered.blogspot.com
Ignoring God — and your cat — gets you in a mess
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Numbers are black and white


text:
When my form posts to my controller action, and the form is bound to my model, blank form values for nullable doubles and decimals default to 0, but blank form values for nullable ints default to null. Is this right?
My model has nullable types for several fields that can be blank. It has nullable ints, doubles, and decimals. I then have a regular form that has textboxes for each of these properties, and they all default to blank (empty string). When this form is posted back to my controller action with all empty form values, and it's bound to my model, the empty doubles and decimals show up as 0, and the empty ints are null.
It seems to me all nullable types should default to null when an empty form value is passed in, but even if that's not the case, it seems very inconsistent that doubles and decimals are treated different than ints.


text:
'Blacklist' Producer on Making NBC's Highest-Testing Show in a Decade and Why He Shifted Away From Film (Q&A)
John Davis talks to THR about television's "steep" learning curve, why Fox didn't buy ESPN and why the "Man From U.N.C.L.E." movie is finally on track: "We had every major star, George Clooney and Channing Tatum, but it was going to get made on its own schedule."
This story first appeared in the Oct. 4 issue of The Hollywood Reporter magazine.
John Davis always has had a keen eye for business. As a young cable executive he counseled his father, Marvin Davis (the oilman who owned 20th Century Fox from 1981 to 1984), to go after ESPN in the 1980s. When his father sold Fox, the Harvard Business School grad struck out on his own.
Now, after three decades as a film producer (The Firm, Predator, Dr. Dolittle), Davis, 59, is moving into TV with two new NBC series: The Blacklist (which debuted Sept. 23) and Ironside (Oct. 2). His 10-employee Davis Entertainment has a deal at Sony TV in addition to his film pact at Fox, where he's developing a new version of Frankenstein with Daniel Radcliffe. The married father of three sat down with THR in his Brentwood offices.
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NBC has a lot resting on your shows. How did that affect you?
Blacklist was the highest-testing show NBC had in 10 years -- Bob Greenblatt said that at the upfronts. So they were unbelievably supportive. When you're a film producer, it's difficult to go to TV because it's a different culture; for me the learning curve has been very, very steep. When I make a movie, I am just dealing with the [studio] executives. But in television we are dealing with both the Sony executives and the NBC executives, then the showrunner, then the show creator. And all the research standards are completely different. Typically when you open a film the awareness level is from 70 to 85 percent; in TV, a good number is 23 percent to 27 percent. Because in television, there are so many shows.
You're moving into TV after three decades. Have you given up on film?
A lot of people are professing the end of the film business, and that will never happen. I think the movie business has gone through a contraction over the past five or six years, precipitated by DVD revenue streaming off and the studios deciding that if there were 20 percent fewer movies, the economics for the industry would be better. But the film business is coming back strongly.
Why did Fox's bid to buy ESPN fail?
The deal fell apart. It was owned by Getty Oil [before ABC bought it], and they felt it was the only exciting thing they had. I negotiated the deal. We were going to pay $100 million. It was 1981, and I had done my senior marketing thesis at Harvard B-School on cable sports. We got very close, and they decided at the last minute they didn't want to sell.
What's the key to a successful negotiation?
Having a relationship with the person you're negotiating with, so that you can have a rational conversation. Irrationality will pull a deal apart; hurt feelings or egos.
Seeing what Rupert Murdoch has done with Fox, what's most impressed you?
That he continues to build a company that is fully diversified in the television and network and sports and entertainment and news business. He's done a really good job of not migrating out of the media business. A lot of people over time have the tendency to build conglomerates that combine diverse businesses, [but] there's never a synergy.
It's taken 22 years for you to develop a film version of The Man From U.N.C.L.E., which now has Henry Cavill and Armie Hammer. What happened?
I loved that franchise as a kid. Years later, I met Norman Felton, who created it, and I persuaded him to trust me with the rights. Over the years, we had various directors attached -- Steven Soderbergh and Guy Ritchie now and others. We had every major star -- George Clooney and Channing Tatum and Tom Cruise. But it was going to get made on its own schedule. In TV, you have a due date. With Blacklist, James Spader wanted to do it. We wanted him -- and boom! -- it happened over a couple of days. In the film business, it happens over years.
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