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Patent ReferencesSemiconductor heterostructure devices with strained semiconductor layers Method for the production of a monocrystalline layer on a substrate with a non-adapted lattice and component containing one or several such layers Molecular hydrogen implantation method for forming a relaxed silicon germanium layer with high germanium content Use of hydrogen implantation to improve material properties of silicon-germanium-on-insulator material made by thermal diffusion Semiconductor device and method of manufacturing the same Patent #: 7109096 InventorsAssigneeApplicationNo. 10553562 filed on 04/15/2004US Classes:438/479, On insulating substrate or layer438/492, Fluid growth step with preceding and subsequent diverse operation257/E21.561Using semiconductor or insulator technology, i.e., SOI technology (EPO)ExaminersPrimary: Geyer, Scott B.Assistant: Patel, Ramesh Attorney, Agent or FirmForeign Patent References
International ClassH01L 21/36DescriptionCROSS REFERENCE TO RELATEDAPPLICATIONSThis application is the U.S. national phase of PCT application PCT/DE2004/000780 filed 15 Apr. 2004 with a claim to the priority of German patent application 10318284.5 itself filed 22 Apr. 2003, whose entire disclosures are herewithincorporated by reference. FIELD OF THE INVENTION The invention relates to a method of making a strained layer on a substrate and a layer structure. BACKGROUND OF THE INVENTION The rapid developments in nanoelectronics has increasingly required more rapidly acting transistors, especially metal oxide field effect transistors (MOSFETs). A performance increase is generally obtained by the reduction of transistordimensions. This however can be expensive and difficult to achieve since the key technologies of chip production, like the lithographic process and the etching process must be replaced by systems which are more powerful. An alternative technique is the useof materials which are more capable of higher performance. The materials which are available for this purpose are especially strained silicon, strained silicon-germanium alloys (Si--Ge) or silicon-carbon (Si--C) and silicon-germanium-carbon (Si--Ge--C). The use of silicon or Si--Ge, Si--C or Si--Ge--C in a certain elastic strain state, improves the material characteristics, especially the preeminently important carrier mobility of the electrons and holes for electronic components. The use of these andother high quality materials enables a significant performance increase of Si based high power electronic components like MOSFETs and MODFETs without the need to reduce the critical structural sizes of the electronic components. Such elastically strained layer systems require epitaxial growth on special substrates or stress relaxed layers, so-called "virtual substrates" whose production with low defect densities is very expensive and difficult (F. Schaeffler,Semiconductor Sci. and Tech. 12 (1997), pages 1515-1549). Up to now the production of nanocrystalline layers with currently available substrate materials has been greatly limited or the quality of the layers has been poor. Different crystal structures as well as different lattice parameters between thesubstrate and the layer material (lattice mismatch) generally limited the monocrystalline growth of layers of higher quality. When monocrystalline layers are deposited with unmatched lattice parameters, these tend to grow first with mechanical stresses,that is their lattice structures differ in this state from the original. Should the deposited layer exceed a critical layer thickness, the mechanical stresses break down with defect formation and the lattice structure comes closer to the original. Thisprocess is termed stress relation and is referred to below as "relaxation". With layer thicknesses which are required for electronic components, through this relaxation, dislocations are incorporated at the interface between the formed layer and the substrate while in a detrimental manner, many dislocations run from theinterface to the layer surface (so-called threading dislocations). Since most of these dislocations travel through newly grown layers, they significantly cause deterioration of the electrical and optical properties of the material. By the terms"dislocation density" or also "defect density", such threading dislocation densities are intended. Since the silicon germanium (Si--Ge) material system is thermodynamically a fully miscible system, the compounds can be formed with optional concentrations. Silicon and germanium are characterized indeed by the same crystallographic structurebut differ with respect to the lattice parameters by about 4.2%, that is an Si--Ge-layer or a pure Ge layer can grow in a strained state on silicon. Carbon can be substitutionally incorporated into silicon only to about 2 atomic percent to reduce thelattice parameters. Within the state of the art for the production for example of strained silicon on for example stress free qualitatively high-grade silicon-germanium alloy layers on a silicon substrate, there is the use of the so-called "graded layer" upon whichin a further step the desired strained layer can be deposited. The "graded layer" can be a silicon-germanium layer whose germanium concentration increases toward the surface until the desired germanium content is achieved in a continuous or stepwisemanner. Since to maintain the layer quality only an increase in the germanium content of bout 10 atom % per μm is required, such layers are up to 10 micrometer thick to achieve the current Ge concentration. The layer growth of this "graded layer" isdescribed by E. A. Fitzgerald et al, Thin Solid Films, 294 (1997) 3-10. This method leads disadvantageously to high layer roughnesses, to dislocation multiplication with an extremely nonhomogeneous distribution of threading dislocations and thus to a crystallographic tipping of regions so that an expensive polishingof the layers is required before strained silicon can be formed on the thus made buffer in an additional epitaxy step. Because of the extremely nonhomogeneous distribution of the threading dislocations, in spite of the comparatively reduced dislocationdensity, locally regions with a higher dislocation density are formed at which the transistor function is very negatively effected. Before the second layer deposition, usually in a CVD reactor or in a molecular beam epitaxy apparatus, a special wafercleaning must be carried out to ensure monocrystalline growth and to minimize the incorporation of impurities or undesired doping substances. The many drawbacks, large layer thicknesses, long growth duration, expensive polishing, cleaning and the two ormore epitaxial steps that are required, reduces the output of the wafers and makes this process expensive, limits the quality and in general makes the method uneconomical. Because of the large layer thicknesses of the graded layers of severalmicrometers of Si--Ge, these also have a substantially poorer thermal conductivity which can give rise to a so-called "self-heating" of the electronic component so that their use in electronic components has been highly unsatisfactory. For these reasons method of producing ultra thin stress relaxed layers of higher quality are of considerable interest. From WO 99/38201, a method is known that permits the production of thin stress relaxed Si--Ge buffer layers. Nevertheless it is a drawback of this method that also here a plurality of expensive technological steps are required so that no ultrathin "virtual substrate" can be produced. After the epitaxial deposition of the layer to be relaxed, an ion implantation is carried out which is followed by a heat treatment, a surface cleaning and an epitaxial depositing anew. OBJECT OF THE INVENTION It is the object of the invention to provide a simple process for producing a strained layer on a substrate without the need for expensive wafer bonding or cleaning steps. SUMMARY OF THE INVENTION The object is achieved with a layer structure according to the auxiliary claim. The method of producing a strained layer on a substrate comprises the following steps: Producing a defected region in a layer adjacent to or neighboring the layer intended to form the strained layer. Relaxation of at least one of the layers adjacent or neighboring the layer to form the strained layer. For this purpose the layer structure is subjected to at least one thermal treatment and/or an oxidation so that starting with the defect region, dislocations are formed which contribute to a relaxation of a layer adjoining or neighboring thelayer to form the strained layer. As a consequence the layer to form the strained layer, is strained. By the term "defect", crystal defects should be understood, that is atomic and extended defect locations like for example clusters, bubbles, hollows and the like. Starting from such defected regions which are produced, dislocations form whichlead to a relaxation of a layer adjoining or neighboring to the layer which is to form the future strained layer. The defect region is so produced that the dislocations give rise to a relaxation of the neighboring or adjoining layer to that which is to form the strained layer. The defect region can especially advantageously be produced in the substrate. Under "relaxation" is to be understood the decay of the elastic stress within the layer. By "neighboring" layer one should understand a layer which is directly adjoining the layer to form the strained layer or is separated therefrom by one or more further layers in so far as the dislocations in that layer lead to relaxation and to astraining of the layer in which the strain is to be generated. By "substrate" is meant the layer in the broadest sense of the word upon which the layer to be strained is deposited or can be arranged. In the course of the process, possibly further layers can be applied. On the free surface of the layer to form the strained layer, epitaxially at least one first layer is deposited, whereby this first layer has a different degree of stress than that of the layer to form the strained layer. In the first layer, therefore, a defect region can be generated. The layer structure is subjected to at least one thermal treatment so that starting from the defect region, dislocations will be formed which lead to a relaxation of the firstlayer. As a consequence thereof the layer therebelow is strained. As a first layer, a graded layer can also be understood whereby at the interface with the layer to form the strained layer, the graded layer has a different degree of stress than that of the layer to be strained. Then in the graded layer adefect region is generated. The layer structure is subjected to a thermal treatment so that starting from this defect region dislocations will be formed that give rise to relaxation of the region of the graded layer arranged on the layer to form thestrained layer. As a consequence that layer is strained where it bounds the graded layer. In the course of the method according to the invention, the layer to form the strained layer is transformed into an elastically strained layer. To that end the layer bounding the layer to form the strained layer is relaxed thereby causing thedesired strained state to develop in the layer to be strained. In the case of a graded layer as the first layer, the layer region of the graded layer which bounds the layer to be strained relaxes thereby transforming the layer to be strained into thedesired strained state. The layer applied to the layer to form the strained layer has a different degree of stress than the strained layer itself. In the course of the method it is possible to apply other layers as well. According to the invention between a layer to be strained and the substrate a further layer which in the course of the process is also relaxed, can be provided. One thus obtains on a substrate a relaxing layer upon which a layer to form thestrained layer is applied. To the latter in the further course of the method another layer capable of being relaxed can be applied to the layer adapted to form the strained layer. On this layer capable of being relaxed another layer adapted to form astrained layer can be applied. Further layers can likewise be provided. The relaxed layers have a different degree of stress than the neighboring layers to form the strained layers. After relaxing of the layers, the layers which are intended to formthe strained layers develop that strain in a process step involving thermal treatment or oxidation. That means that it is possible to relax several layers and thereby produce several strained layers in a single process step during the thermal treatment or oxidation. The layers can then be at least partly removed. In this manner, at least onestrained layer can be produced on a very thin relaxed layer. Such an epitaxial layer structure or wafer can advantageously be made in a single deposition process. Especially advantageously, the wafer can be permitted to remain in the reactor and layers can be deposited thereon without expensive polishingand cleaning steps. Since the epitaxial layer structure as a rule should be held relatively thin, for example smaller than about 500 nanometers and especially smaller than 200 nanometers, a sufficient thermal conductivity can be ensured within the entire layersequence. By the choice of the strain to which the layer adapted to form the strained layer is to be subjected, that is between tensile strain or compression strain, a resulting strain can be selected for the layer intended to form the strained layer. In order to effect the relaxation of the layer adjacent to or neighboring the layer to be strained and thus bring about the application of strain to that layer, that layer structure is advantageously subjected to at least one thermal treatment. It is however conceivable to utilize another treatment instead of the thermal treatment so that the neighboring or adjacent layer to that which is to be strained, can be relaxed and the strained layer produced. Thus it is especially preferred to carry out the relaxation by means of oxidation with O2 or hydrogen. Instead of a purely thermal treatment to form the relaxed region, an oxidation can follow the thermal treatment or a combination ofoxidation and thermal treatment can be used. For this purpose the concentration of the elements which are important for the functioning of the electronic component can be increased within the layer structure (for example Ge enrichment in Si--Ge). As materials for the substrate, especially for example silicon, SOI substrate, SiC, graphite, diamond, quartz glass, GdGa-garnet or also III-V semiconductor and III-V nitride should be considered. The method of the invention has a number of advantages. Advantageously, with this process the generation of a strained layer requires only a single epitaxial deposit and no expensive time consuming process steps like wafer bonding and polishing(CMP). It is also advantageous that apart from silicon, commercially available SOI substrate with a thin Si surface layer to be strained can form the basic structure for the substrate. Also silicon on sapphire, BESOI or SIMOX wafer can be selected asthe substrate. The SIMOX wafer has indeed as a rule a dislocation density of about 105 cm-2, most usually 102 to 103 cm-2 and thus has good layer homogeneity and purity as well as the ability to be produced by an economicalprocess. The method uses process steps which are established in silicon technology. The technology can be adapted also for use with very large wafers, for example 300 millimeter wafers. The defect region can be produced by ion implantation. In a further feature of the invention, for the temperature [thermal] treatment a suitable condition is a temperature between 550° C. and 1200° C. and especially between 700° C. and 950° C. As a result starting froma defect region in the second layer, defects are formed under these conditions, especially dislocations, which permit relaxation of the first layer, whereby the layer to be strained has strain imparted to it. By the choice of the strain of the first layer, between tensile strain or compressive strain, the resulting type of strain in the layer to be strained is selected. If the first layer is compressively stressed before the thermal treatment, forexample by the choice of Si--Ge as the material for the first layer (with optional concentration, then the layer to be strained, for example comprising silicon, will have tensile strain. The Si--Ge layer can be replaced by the use of a tension-strained first layer of for example Si--C with up to about 1 to 2 atomic % carbon to produce compression strained silicon. The use of ternary alloys like Si--Ge--C and the use of doped Silayers or alloys (boron, arsenic, phosphorus, antimony, erbium, sulfur or others) is also possible. The thermal treatment can be carried out in an inert atmosphere, or also in an oxidizing environment, for example in O2 or H2O, or in a nitriding atmosphere, for example NH3 or in a reducing atmosphere, for example in forming gas. Very good results are obtained when the thermal treatment is carried out in nitrogen. The thus produced strained layer or the strained layers can be exposed, for example by a wet chemical removal of layers. The removal of one or more layers can also be effected by means of an additional hydrogen or helium implantation. Alternatively, etching or grinding or a combination thereof can be used. The removal can be carried out such that either only thefurther epitaxial layer or also the layer structure can be transferred to a new wafer, as a rule onto SiO2. Especially in the case of Si--Ge layers as the layer structure, these advantageously can be selectively etched. In this manner for examplestrained silicon can be produced directly on SiO2. As a separating plane, advantageously a plane is selected in which previously helium or hydrogen bubbles have been produced. In this manner advantageously even very thin layers can be removed andfor this purpose the required implantation dose can be reduced. The defect region provided for the relaxation can also be used to getter hydrogen which can be implanted substantially more deeply, that is with higher energy, and so contribute to thelayer separation. An implantation of the hydrogen or helium with higher energy gives rise to less damage to the already relaxed and strained layers and thus contributes to a higher output of the wafers or layer structures since as a rule implantationapparatus at higher energies, for example greater than 50 keV supply greater ion currents. The liberated or exposed layer structure can be used to build up more complex layer structure. For this purpose the skilled worker in the art can use all commercially available process and layer materials depending upon the layer structure to beformed and the particular requirements the layer structures are to satisfy. All substrates can be used as have been described including silicon, SOI structures, silicon on sapphire, SIMOX-wafers or BESOI structures. In these cases, the layer to be strained, the insulator and the substrate become the base structure. The layer to be strained can advantageously be selected to be silicon. The layer to be strained can advantageously have a thickness of 1 to 100 nanometers, especially 5 to 40 nanometers. This layer thickness should not exceed the critical layer thickness and must be so small that at least a substantial part of the dislocations from the first layer will also spread along their slip planes into this layer. These thicknesses depend especially upon the degree of stress in the first layer and its layer thickness. The greater the desired stress of the layer the smaller must the thickness of the layer to be strained be. A large layer thickness ratio of a layer to be relaxed to a layer to be strained appears to be advantageous, especially a layer thickness ration greater than 10. In an especially advantageous feature of the invention, as the first layer on a layer to be strained, an epitaxial Si--Ge or Si--Ge--C or SiC layer is deposited which has a thickness advantageously close to the critical layer thickness. Thecritical layer thickness defines the maximum thickness for this first layer in which a defect free growth is still possible on the layer to be strained but which is not lattice matched thereto. With a layer thickness below this critical layer thicknessas a rule strictly pseudomorphic growth that is completely defect free is produced. The critical layer thickness should not be exceeded to such an extent that the layer is already noticeably relaxed. Alternatively to a layer with constant composition, a graded layer can also be used which is disposed on a substrate below a layer to be strained. That means that the composition can increase or drop within the graded layer. In the case ofSi--Ge, the Ge concentration can be reduced away from the substrate progressively slowly or in steps or can have an increasing Ge concentration or can be composed of pure germanium (Ge) after only a few nanometers of growth. If in spite of this asufficient layer thickness is to be maintained without exceeding the critical layer thickness, the Ge concentration can be allowed to fall rapidly, for example to 25 atomic %. Under these conditions the layer thickness can still be about 80 nanometers. The region with the higher Ge concentration enables a high degree of relaxation above 80%. Also a U-concentration profile can be of advantage in order to provide the Ge concentration of for example 20 to 40 atomic % with the greatest possible degree of relaxation for the first layer to thereby produce a high degree of strain in thelayer to be strained. In that case it is advantageous to select a thickness of the first layer which is as large as possible so that the stress relaxation can be carried out efficiently. At a constant Ge concentration of 20 atomic % Ge, a maximum layer thickness of about 400 nanometers can be produced. A complex concentration profile is of advantage for higher Ge content. Optionally also a further layer, for example to avoid surface roughening by blistering after a hydrogen or helium implantation, can be deposited on the layer structure. This layer can be amorphous or polycrystalline. This layer can be depositedbefore or after generating the defect region for example by ion implantation. The layer thickness of this optional layer need only be determined by the implantation parameters. The material and thicknesses of the individual layers given here are intended to be by way of example only and it will be self understood that they do not create a limitation of the invention. Advantageously the thickness of a second or further layer to be relaxed also should be selected to be as large as possible. The layer to be strained is then optionally arranged between two relaxing layers and the relaxation can be carried out especially efficiently. It is especially advantageous for at least one very thin strain layer to be provided on at least onerelaxed layer, especially strained silicon on relaxed Si--Ge. As has been indicated however it is also possible to produce a plurality of layers to be strained and a plurality of relaxed layers. In an especially advantageous feature of the invention by arranging a mask on the layer structure, a locally limited defect region can be produced. For that purpose it has been found to be especially advantageous that from the layer to bestrained, locally strained and unstrained regions in a plane are produced, that is in a plane directly adjoining one another and without step formation as has previously been the case in the state of the art. The relaxation and the straining of thelayer thus can be found only in the regions beneath the unmasked parts. The defect region or regions can, especially advantageously, be made by ion implantation, primarily with light ions like hydrogen (H.sup. , H2.sup. ) helium, fluorine, boron, carbon, nitrogen/sulfur and so forth or by ions of the layermaterial or of the substrate material itself, thus for example silicon or geranium with an Si/Si--Ge heterostructure. It is advantageous to use ions which will avoid undesired contamination or doping of the structure. In this sense, inert gas ions, for example Ne, Ar, Kr and so forth can be used. For hydrogen or helium ions, a dose about 3×1015 to 3.5×1016 cm-2, especially 0.4×1016 to 2.5×1016 cm-2 is used. Also suitable is a combination of two implantations, for example firsthydrogen and then helium or first boron and then hydrogen. A boron implantation in combination with a hydrogen implantation allows the dose of the hydrogen implantation to be reduced. Also a thermal treatment between the implantations can beadvantageous to produce nucleation seeds for the defect formation. The defect region is advantageously produced at a spacing of 50 to 500 nanometers from the layers to be relaxed. In a further feature of the invention, a defect region is produced in the substrate and crystal defects in the remaining layer structure. This applies especially for ions which lead to bubble formation as, for example, hydrogen, helium,fluorine, neon or argon. Advantageously, with a silicon implantation by comparison with very light ions like, for example, hydrogen or helium ions, the dose can be significantly reduced, that is especially by a factor of 10 to 100. This shortens certainly theimplantation time and increases the wafer output significantly. With the goal of achieving a higher degree of relaxation also when two or more implantations are used, the defect formation in the substrate and in the first layer can be brought about or adjusted independently from one another. An advantageous mode of operation is thus to provide one or more implantations with different energies and possibly with different ions in the first layer with a reduced dose and with a second implantation to then form the defect region in thesecond layer. The production of point defects in the first layer to be relaxed gives rise to accelerated diffusion and to greater relaxation. The ion implantation can be carried out over the entire surface or through the use of an implantation mask, for example a photo lacquer layer on optional locations of the wafer. In a further feature of the invention, the wafer is not held at an angle of 7° for the implantation as in the state of the art. Rather the wafer is tilted at an angle greater than 7° to the normal, especially an angle of30° to 60°. With the method it is possible to produce strained and nonstrained layers adjacent one another while ensuring planarity without steps. This latter is possible since the subsequent treatment can be carried out with such a small thermal budgetthat nonimplanted regions of the first layer on the layer to be strained and/or a second layer below the layer to be strained will not be relaxed or will be relaxed only slightly and the layer to be strained in this region will not develop strain or bealtered to match the implantation mask to the layout of the electronic components or the insulation regions. Only the regions where, for example, strained silicon is required for the electronic components are implanted. The transition regions between strained and unstrained regions are advantageously configured as insulation regions between the electronic components. Especially advantageously, silicon dioxide is again selected as the insulation material. On the strained region thus produced, further epitaxial layers can be deposited in order to increase for example the layer thickness of the strained region or locally on the wafer to match those regions or to provide new layers, for example, torealize complex electronic or optoelectronic components. With the method according to the invention, one or more strained regions can be produced which advantageously have an extremely small surface roughness as a rule less than one nanometer and only a small defect density of less than 107cm-2, especially less than 105 cm-2. The low degree of roughness is especially advantageous for the production of MOSFETS where a thermal oxide or another dielectric, for example a high-k dielectric, that is a material with higherdielectric constant, is produced on the strained layer. The surface roughness influences very sensitively the electrical quality of the dielectric which is the heart of the transistor. Also the mobility of the charge carriers are greatly dependent uponthe interface in a very thin layer. The surface roughness of, for example, the strained silicon can be further reduced by the growth of a thermal oxide. The thus formed oxide can be removed prior to the growth or deposition of the gate dielectric. The method makes available in a further, especially advantageous, feature of the invention, the potential for further reduction of the defect density in the relaxed and the strained layer. This can be achieved by the etching of trenches in the layers with micrometer spacing, especially 1 to 100 micrometer or advantageously by etch trenching electronic component structures and subsequent thermal treatment above 500° C. Threading dislocations in the layer then slip to the edge of this region and are so healed. Etch trenches can in addition also form so called shallow trench insulation. For this purpose the trenches can be filled with insulator material andthus electrically separate the electronic components from one another. The production of a system on a chip, that is different electronic components with different functions in a plane is thus also advantageously within the scope of the invention. As has already been indicated, strained and nonstrained layers can be made while maintaining their planarity. This enables the production of special electronic components and circuits with strained or nonstrained region of for example silicon. These especially very thin layers can locally be reinforced by deposition, for example, by selectively depositing contacts for the source and drain, so-called "raised source and drain" and can enable the fabrication of power electronic components. For the production for example of p and n channel MOSFETs, the so formed strained silicon layers can advantageously be used since the electron and hole mobilities in the tetragonal lattice of strained silicon is about 100% to about 30% increasedby comparison with unstrained silicon when the lattice strain is greater than 1%. In that case one is not bound to particular transistor types or electronic components. MODFETs, resonant tunnel diodes, photodetectors and quantum cascade layers can be realized. BRIEF DESCRIPTION OF THE DRAWING In the following the substance of the invention is described in greater detail with reference to seven figures and embodiments without limiting the scope of the invention thereto. The figures show: FIG. 1: a schematic diagram of the layer system, comprising a substrate 1 and a two-layer epitaxially applied layer structure comprised of a layer 4 to be relaxed and a layer 5 to be strained and a defect region 99 produced by ion implantation; FIG. 2 a schematic illustration of a layer system comprised of an SOI-substrate formed of silicon 1, an insulation layer 2 and a silicon surface layer 3 as well as an epitaxially applied layer structure of the layers 4 and 5, whereby the layer 3and/or layer 5 are to be strained, border upon the layer 4 to be relaxed. FIG. 3 a schematic illustration of a layer system corresponding to FIG. 1 whereby above the layer 5 to be strained, a further layer 6 is found which is to be relaxed. FIG. 4: a schematic layer system corresponding to FIG. 2 whereby upon the layer 5 to be strained is a further layer 6 to be relaxed. FIG. 5 a schematic layer system corresponding to FIG. 1 where the layer structure 54 to be relaxed has a gradual concentration pattern perpendicular to the layer plane; FIG. 6 A schematically illustrated layer system comprised of a substrate with a buried structure 99, a two-layer epitaxially applied layer structure (4 or 5), an implantation mask 66 as well as a layer 5 to be strained after heat treatment. FIG. 7 a schematically illustrated layer system corresponding to FIG. 6, whereby after implantation and heat treatment has a relaxed layer 4' and a strained layer 5' while in the masked region a strained layer 4 and an unstrained layer 5 areprovided. SPECIFIC DESCRIPTION FIG. 1 shows the production of a layer 5 adapted to form the strained layer on a layer 4 to be relaxed on a substrate 1. The layer growth is effected preferably by gas phase epitaxy or with molecular beam epitaxy. Upon a silicon substrate 1, anepitaxial layer 4, for example a silicon-germanium (Si--Ge) layer is deposited with a germanium concentration of for example 30 atomic percent germanium and a layer thickness d4 of 10-500 nm. Then the layer 5 to be strained (for example, Si) isdeposited with a layer thickness d5 of, for example, 1 to 50 nm. It is to be noted that a higher layer thickness d4 is of advantage since as a rule this tends to smaller dislocation densities and higher degrees of relaxation in thestress-relaxed virtual substrate. Alternatively thereto, as has been illustrated in FIG. 2, the above described layer system comprised of the layers 4 and 5 can be deposited on an SOI substrate (Si-Wafer 1 with buried amorphous SiO2 layer 2 and an Si surface layer 3 with athickness of, for example, 50 nm) instead of on an Si wafer. Alternatively to FIG. 1, as can be seen from FIG. 3, the layer 5 to be strained has a further layer 6 with a layer thickness d6 of, for example, 10 to 500 nm (for example Si--Ge with the same Ge concentration as in FIG. 4 or a different Geconcentration) grown thereon to achieve a symmetrical stress pattern. Upon relaxation of the layers 4 and 6 and the application of strain to layer 5, the layer 6 can be removed. In this manner one can produce a strained layer 5 on a very thin relaxedlayer 4. As an alternative to FIG. 2, as has been shown in FIG. 4 the layer 5 to be strained with a further layer 6 grown thereon, for example SiGe with the same or different Ge communication than the layer 4) is used to produce a symmetrical stresspattern. After the relaxation of the layers 4 and 6 and the application of strain to the layer 5, layer 6 is removed. In that manner a strained layer 5 is provided on a very thin relaxed layer 4. As an alternative to FIG. 1, one can operate as shown in FIG. 5 wherein instead of an SiGe layer 4 an Si--Ge layer 54 with a sharply nonhomogeneous concentration pattern is produced as illustrated by the gradient in gray coloration in the layer. For example in a 200 nm thick layer 54 the Ge concentration from 50 atomic % at the beginning (darkest region) drops to 25 atomic % (clearer region near the layer 5). The total layer thickness must in all cases lie below the layer thickness at whichsignificant stress relaxation (for example 5%) will take place already during the growth) occurs. On this layer 54 the layer 5 to form the strained layer is deposited. Below these deposited layers in all of the described embodiments a defect region 99 can be produced, for example by ion implantation (see FIGS. 1 and 6). For this purpose advantageously a helium implantation can be carried out with a dose ofabout 1×1016 cm-2. The energy of the ions is so matched to the layer thicknesses that the mean range of the ions lies about 50 to 500 nm below the first interface, that is in the substrate. As an alternative to the helium implantation,in this example also an Si implantation for example with an energy of about 150 keV and a-dose of about 1×1014 cm-2 for 100 nm layer thickness of the silicon-germanium (Si--Ge) layer 4 and 20 nm layer thickness of the silicon layer 5. The implanted ions produce crystal defects in and beneath the SiGe layers 4, 6. The ion implantation can be laterally limited by a mask 66 to produce locally strained layers on relaxed layers. Then, for several minutes a thermal treatment is carried out in the form of a tempering, i.e. a heat treatment at 900° C. in an inert N2 atmosphere. Another inert gas (for example argon) or a gas which is suitable for the purposesof the invention (for example O2 or forming gas) can be used. Above the defect region 99, with this temperature beginning which is selected not to be too high, a stress relaxed silicon germanium (Si--Ge) layer structure 4, 6 is formed together witha strained layer 5. The layer 5 can for example be of silicon or also of silicon germanium (Si--Ge) with a different germanium concentration than that in the epitaxial layers 4 or 6, or from a multiple layer. In the case of silicon, strained silicon isproduced. In the case of Si--Ge, strained Si--Ge is produced. Because of the thinness of the layers 4, 5, 6 a planarity of the layers in the sense of the depth of field of a lithographic process as well as the thermal conductivity to the substrate areensured. The heat treatment or oxidation temperature can be matched to the requirement of the total layer system and to the electric component making process and can be reduced therefore to particularly low temperatures. For example a layer relaxationcan be achieved with a suitable ion implantation already at a temperature of 600° C. An oxidation produces a germanium enrichment at the Si--Ge layer 6 close to the surface. As a result a greater strain in the layer 5 is produced. Layer sequences 4, 5, 6 according to the invention on the substrate can as in FIG. 1 have a thickness of about 50 to 500 nm or less to fulfill these requirements. Layer 5 from FIGS. 1 to 7, for example strained silicon, can be used advantageously to produce ultrafast MOSFETs, especially n-channel and p-channel MOSFETs, because of the higher mobility of the charge carriers. In the regions below a mask, in which the layers 4 and 6 of the Si--Ge structure after the implantation are not relaxed, advantageously, p-MOSFETs can be produced. These regions arise as shown in FIG. 7 when, for example during the ionimplantation a mask is used. Since usually only the regions of the layers 4 or 6 of the layer structure relax which lie above a buried defect region of a substrate, the regions of the layers 4 or 6 of the layer structure which are located in the regionsprotect by or below the mask usually remain stressed and the corresponding layer 5 unstrained in this region. Starting from the structures shown in FIG. 1 or 3, the strained layer 5 (optionally together with layer 6) can be bonded to a further Si wafer (not shown) provided with an SiO2 layer. After hydrogen implantation with a dose of for example5×1016 H2.sup. cm-2 and heat treating at, for example, 400° C., the substrate 1 can be removed. In addition, the layer 4 can be removed. If the layer 6 is held sufficiently thin, for example 50 nm, fully depleted MOSFETtransistors can be produced with this layer structure. It can however also start with other layer sequences and processing: Apart from silicon germanium (Si--Ge) and Si--Ge--C and Si--C as epitaxial layers 4 and 5, or 6, generally all III-V compounds, especially III-V nitrides (GaN, AlN, InN) as well as oxidic perovskites can be used as epitaxial layers. What isimportant in each case is only that suitable materials be deposited on a suitable substrate so that at least one layer with a different lattice structure can be produced on a thus generated "virtual substrate". Thereafter the production of theelectronic components for example transistors, can be carried out. The layer sequences made according to the method of the invention can be used especially to produce metal oxide semiconductor field effect transistors (MOSFETs) and modulated doped field effect transistors (MODFETs) it is also possible to makeresonant tunnel diodes, especially a resonant Si--Ge tunnel diode or a quantum cascade laser on such a "virtual substrate". Furthermore, it is conceivable to produce a photodetector from one of the layer sequences. In addition it is conceivablestarting with a layer sequence of, for example, GaAs, GaN or InPals as the layer 2 on a virtual substrate of silicon germanium (Si--Ge) 1 to produce a laser. Field of SearchOn insulating substrate or layerFluid growth step with preceding and subsequent diverse operation FORMATION OF SEMICONDUCTIVE ACTIVE REGION ON ANY SUBSTRATE (E.G., FLUID GROWTH, DEPOSITION) Using electromagnetic or wave energy (e.g., photo-induced deposition, plasma, etc.) Organic reactant Heat treatment Heat treatment |


text:
- The definition of a botch is a sloppy, poorly done job.
A messy, sloppy and poorly done project is an example of a botch.
- Botch is defined as to make errors or do something in a clumsy, sloppy manner.
When you make careless errors in a home improvement project because you aren't paying attention, this is an example of a time when you botch the job.
botch definition by Webster's New World
transitive verb
- to repair or patch clumsily
- to spoil by poor work or poor performance; bungle
Origin: Middle English bocchen, to repair ; from uncertain or unknown; perhaps
- a badly patched place or part
- a bungled or unskillful piece of work
Brit., Dialectal a boil, sore, or ulcer
Origin: Middle English bocche ; from Anglo-Norman boche (OFr boce): see boss
botch definition by American Heritage Dictionary
transitive verb botched, botch·ing, botch·es
- To ruin through clumsiness.
- To make or perform clumsily; bungle.
- To repair or mend clumsily.
- A ruined or defective piece of work: "I have made a miserable botch of this description" (Nathaniel Hawthorne).
- A hodgepodge.
Origin: Middle English bocchen, to mend.
Related Forms:
- botchˈer noun
- botchˈy adjective

subset: commoncrawl


text:
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Deal of the week: SSDs, power supplies, and 144Hz monitors We've got another short and sweet deal post for you guys this week, with a small collection of hardware bargains: Kingston's... Type: News story Tags: Power Storage Displays |
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Monoprice's budget mechanical keyboard costs only $58 Mechanical keyboards with Cherry MX switches typically sell for around $80 and up. They're a bit of a luxury, but TR regular just brew... Type: News story Tags: Input devices |
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Cooler Master's QuickFire Ultimate mechanical keyboard reviewed With an embedded steel plate and a beefy body, Cooler Master's QuickFire Ultimate may be one of the sturdiest mechanical keyboards around. We take... Type: Feature article Tags: Input devices |
70 |
Deal of the week: Discounted SSDs, DIMMs, and 4K displays You know the drill. We've scoured the web for the best deals on PC hardware and combined them in a neat little list. ... Type: News story Tags: Storage Displays Memory |
28 |
Avegant VR headset funded on Kickstarter Remember the Avegant Virtual Retinal Display we talked about in October? The VR headset hit Kickstarter a couple of days ago, and... Type: News story Tags: Multimedia Displays Gaming |
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Logitech's K400 wireless keyboard and touchpad reviewed For only $40, Logitech's K400 combines a keyboard and touchpad in a lightweight, wireless package that seems ideal for the living room. We Type: Feature article Tags: Input devices |
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AMD's revenue falls 2% in 2013, but income and gross margin rise AMD's latest financial results are out. The numbers cover the fourth quarter of 2013 and the year as a whole, and the news is... Type: News story Tags: CPUs Graphics Game consoles |
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You can snag a 39'' 4K display for $404 The other day, my friend and fellow PC enthusiast Andy Brown pinged me and told me I needed to come over to his house to... |
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New controller, in-home streaming details leak out of Steam developer event Valve's Steam Dev Days summit is taking place in Seattle, Washington this week. The press wasn't invited, and while Valve promises to release video... Type: News story Tags: Input devices Game consoles |
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Oculus Rift's 'Crystal Cove' prototype tickles our rods and cones The absolute highlight of last year's CES was getting a first look at an Oculus Rift prototype. Strapping on a Rift for the first... |
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Friday night topic: Light bulbs? Yep, light bulbs | 88 |


text:
A great way for kids to enjoy cool somen noodles in the summer, this Cho-hiehie North Pole Nagashi Somen Noodle Fountain by Takara Tomy is inspired by "flowing somen" (nagashi somen) cuisine, where the noodles literally shoot down bamboo chutes with ice for you to catch. This time it's an iceberg fountain that you can make yourself and keep the noodles super cool (cho hiehie)!
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text:
Actress Jamie Lee Curtis is a patented inventor - she created a diaper equipped with a premoistened baby wipe. And that's no act!
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
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Registered users: Manage your profile.
Number | Title | Issue Date |
7174935 | Automatic safety tire device An automotive device for increasing the traction on a supporting surface including a body mountable on a wheel hub and carrying a plurality of radially extending traction arms that are mounted for movement between retracted positions and extended positions in which ... | 02/13/2007 |
7096905 | Slip-preventing device for vehicle tire A slip-preventing device of a tire has a plurality of arm frames each of which is contacted with an inner sidewall, a tread and an outer sidewall of the tire. The arm frame has a link unit at a side of the outer sidewall of the tire. The arm frames are linked with e... | 08/29/2006 |
7044522 | Passive capture slip-proof chain handling hook A chain hook with no moving parts that is capable of passively capturing and supporting both sides of a given chain link. The hook is provided with dual support surfaces that support the link and prevent disengagement of the hook while under load. A horn between the... | 05/16/2006 |
6860305 | Truck track An anti-skid device especially adapted for trucks of the dual wheel type. In its preferred embodiment, the device is provided with a cleat(s) that protrudes two inches from the surface of the tire. The device is designed to be disposed across both wheels of dual-whe... | 03/01/2005 |
6357500 | Nonskid device, namely for pneumatic-tired wheels of vehicles on ice and snow surfaces For adapting a nonskid device for pneumatic-tired wheels of vehicles on ice and snow surfaces which is held at one end on the wheel of the vehicle and which shows a number of arm-type gripping element supports (50) placed on a supporting element (10), par... | 03/19/2002 |
6026877 | Paddle-type lug for use with convertional tire chains Lugs for detachably mounting on the chain of a conventional tire mounted wheel of a vehicle. The lug being detachably mounted to a portion of the chain which extends laterally over the tread of the tire mounted wheel of a vehicle. The lugs being means for... | 02/22/2000 |
5934055 | Lawn aeration accessory Invention relates to a lawn aeration device for attachment to the wheel of a riding mower, for example. The device, where a plurality are spaced about each driven wheel, comprises an arcuate-shaped metal plate, contoured to lie against the riding surface ... | 08/10/1999 |
5785783 | Device for quickly fitting snow chains to vehicle tires A tire chain assembly including two stays hinged at one end on a housing and supporting wall chains which hold tread chains in place on the tread of the tire when they are pulled tight as the stays are drawn together by a resilient linkage. Arms or resili... | 07/28/1998 |
5123469 | Tire traction chain A tire traction chain having a tread or contact section with spikes, and two side sections. The tread or contact section is comprised of plate-like contact section parts in which the spikes are secured. The contact section parts are linked with one anothe... | 06/23/1992 |
4997019 | Tire traction chain with traction plates A tire traction chain having a tread or contact section with spikes, and two side sections. The tread or contact section includes plate-like contact section parts in which the spikes are secured. The contact section parts are linked with one another.... | 03/05/1991 |
4922982 | Anti-skid device for wheels An anti-skid device for a vehicle wheel is provided comprising an axial part having a plurality of arms extending therefrom which are attached to an anti-skid assembly, such as a snow chain arrangement. The axial part includes a securing device which rota... | 05/08/1990 |
4854359 | Antiskid device, particularly for pneumatically tired vehicle wheels on snow and ice surfaces The antiskid device includes a fixing disk, which can be mounted on the wheel rim of a motor vehicle and can remain thereon during the winter months, and a supporting disk mountable on the fixing disk and lockable therewith by means of a retaining ring on... | 08/08/1989 |
4643251 | Traction devices for automotive wheels A wheel attachment to provide extra needed traction by a motor drawn vehicle when traveling on roadways covered with snow, ice or mud. It comprises a plurality of circularly spaced, flexible traction members overhanging the tread of a pair of wheels and c... | 02/17/1987 |
4515198 | Means for detachably connecting a chain link to a skidder ring Simplified means for connecting skidder rings to the tag chains that hold the skidder rings in spaced positions around a tractor wheel. Each skidder ring has four hooks spaced approximately 90° apart, two at each side, of novel construction. Each hook is... | 05/07/1985 |
4436129 | Composite semirigid snow chain, without rear hooking means, for motor vehicles A composite semirigid snow chain without rear hooking means, for motor vehicles, consisting of two parts to be independently applied onto a wheel and to be connected to one another at a sole side, that is at a sole side of the wheel, by means of an elasti... | 03/13/1984 |
4411301 | Tire traction chain A single tire chain adapted to be placed on an automobile tire and be anchored at its ends in front of and through an opening in the wheel.... | 10/25/1983 |
4408645 | Laminated wearing plate assembly for tire chain Tire protective or traction chain comprising a network of wearing plates 14 substantially perpendicular to the surface of a tire and connectors 12 substantially parallel to the surface of the tire interconnecting the wearing plates. Each wearing plate on ... | 10/11/1983 |
4388754 | Skid protection device for wheels The present invention relates to a skid protections device (3) for wheels preferably snow chains for vehicle wheels. In order to permit quick and simple assembly of snow chains on vehicle wheels the device according to the invention comprises a power aggr... | 06/21/1983 |
4357975 | Anti-skid chain An anti-skid tire chain comprising a pair of parallel side chains, a series of traction rings extending medially between the side chains, and a network of connector chains interconnecting the traction rings with the side chains and with one another is cha... | 11/09/1982 |
4334568 | Tire chain There is disclosed in the specification an improved tire chain including at least one pair of tire gripper portions adapted at one of their ends to exert pressure on the tire at the tread of the tire, and at the other end on their respective sidewall near... | 06/15/1982 |
4275781 | Cleated snow chain A cleated chain wrapping is disclosed for use on mounted automotive wheels. The wrapping utilizes a plurality of chain pairs attached to the wheel and extending transversely across the tread surface. Cleats connect one chain in each pair to an adjacent ch... | 06/30/1981 |
4274463 | Tire traction enhancing apparatus A traction enhancing apparatus for attachment to vehicular tires having both circumferential and cross chain members engaging the tread of the tire and further including one or two semi-rigid "U-shaped" bridle members for gripping the tire sidewalls durin... | 06/23/1981 |
4243088 | Skidder ring and chain connecting means Means for improving the traction of wheeled equipment used in the logging industry comprising an improved skidder ring with clevises to which the connecting tag chains are fastened by a pin preferably secured in place by a spot of welding material. When a... | 01/06/1981 |
4227562 | Road traction apparatus Vehicular road traction apparatus feeds a traction portion of an endless chain between a tire and the road surface and a recirculating portion of the chain is picked up aft of the tire and fed into a conduit which conducts it back to a point fore of the t... | 10/14/1980 |
4215733 | Tire protector device A tire protector device with a covering, especially formed by plates, which exhibits at its ends next to the outside of the tire connector parts for fastening a chain net which covers the side wall of the tire. The edge of said chain net remote from the c... | 08/05/1980 |
4176704 | Emergency traction device Provided is a novel emergency traction device adapted for use on all vehicles which use circular rubber tires or the like for movement. The traction device disclosed, by virtue of its design, takes advantage of inherent physical forces to maintain the dev... | 12/04/1979 |
3955610 | Self-seating tire traction apparatus for clampingly engaging tire sidewalls A tire traction apparatus for use on a tire comprising at least one chain having first and second ends and a length slightly greater than the circumference of the tire, a latch for securing the first end to a portion of the chain proximate the second end,... | 05/11/1976 |


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Scrapspace: Storage and Organization
» Get Organized Week 6: Photos & Negatives
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Post: Get Organized Week 6: Photos & Negatives
Marketing Goddess
Posts: 4775
Joined: 12-08-03
Kels's Gallery
on 04-22-13 09:49 AM
Solutions for storing your most prized possessions.
Posts: 3507
Joined: 02-03-01
Jill's Gallery
on 06-04-13 04:38 PM
In response to
Hey organizers extraordinaire! You've probably read this weeks email by now and you are thinking you might want to quit this
Get Organized
stuff altogether rather than face your photo dilemmas. I did, and I consider myself quite normal.
If it helps, I didn't throw in the towel. I kept going and I'm still going.
Try to focus on that happy place way out there--a few weeks, months or years from now. In that super happy place your photos are accessible and are in a system you can live with for the rest of your life (and can be passed on to someone else).
I work on my photos every chance I get and now Charlie (DH) gets involved too. He scans,gets photos onto external hard drives, and uploads photos to the same place so we don't have wasted effort. Photos used to be a really, really HOT MESS around here. Psssssss...fire's out.
My overworked laptop died last week. Thank goodness for Mozy and external hard drives (for photos). I only missed 12 hours of backup which happened during the middle of the night. Check into Mozy or Carbonite if you don't have backup on the "cloud." I'M SO THANKFUL WE DID.
We had Stacy Julian in our offices to do videos last month and
she explains more about photo storage in this video
. Enjoy!
Pace yourself this week and if you can't organize photos at least decide on a storage and organization plan and get it implemented. If you put this off I promise, it won't get done. If you think you'll have time or interest later, well, I know all of the excuses those little devils
whisper in our ears...
just send them away and get fun and good energy into this part of your life.
I'll be checking in. Have a great week. You're AMAZING truly AMAZING and you CAN do this!!
Posts: 3507
Joined: 02-03-01
Jill's Gallery
on 06-04-13 05:00 PM
In response to
A fun FREEBIE...
I've had requests for the pattern I used for my "S-T-U-D-I-O" banner. I had to make one up and Kels and Jessica just finished making it into a printable PDF. The first link below will take you to it. The pattern is in Week #1 content (permanently) now if you want to access it later.
Click here for the banner pattern.
Click here to see the ornate chipboard pieces I used on the banner pieces.
Posts: 22451
Joined: 07-05-09
rockmom's Gallery
on 06-06-13 08:27 PM
In response to
I have had a system in place now for several years that works for me. I had three empty file boxes in a closet and decided to use them - reuse don't rebuy!
photos organized by given name, surname, or category
one of the folders
photos I am researching
Not so organized with my digi photos but DO have them backed up.
Posts: 4755
Joined: 05-09-09
RedSquirrel's Gallery
on 06-06-13 11:55 PM
In response to
Denise, that looks very organised.
Excuse me, I'm having a
moment on this week's class.
Posts: 3145
Joined: 09-10-10
Sewflake's Gallery
on 06-07-13 12:15 PM
In response to
I too have had a system that has worked well for the way I scrap. I organized it at the beginning and kept it up until the last couple of years, then it got easy to just put them in a large basket to finish sorting some day. What historical pictures there are are scattered around the family so the only ones I work with are mostly what I have taken myself.
I had gotten all but a few piles of pictures sorted and hope to finish up this week end. Now my negatives are another story all together, one I don't even want to think about right now. They are all in one spot but that is about all I can say to their organization. The most recent years are all on cd's which I expect in time will become obsolete.
Photo storage
Photos left to sort
Posts: 22451
Joined: 07-05-09
rockmom's Gallery
on 06-07-13 12:59 PM
In response to
Sewflake, I like your boxes, pretty. Several stores had them on sale lately and I thought hard about getting some but I have some large photos and memorabilia and decided to just keep it all together in one folder. I DO like the pretty boxes though!
Posts: 22451
Joined: 07-05-09
rockmom's Gallery
on 06-07-13 01:00 PM
In response to
Rosey, from experience, it is worth the time and effort it takes to get this done. I know I was there several years ago. You can do it!
Posts: 10514
Joined: 09-27-06
KatieJo's Gallery
on 06-08-13 05:27 AM
In response to
I have several albums on the bottom shelf of my bookcase. In addition, I have photos in archival photo boxes on the top shelf of my closet and I have also organized my photos on my computer nicely. Plus, we have an external hard drive. Unfortunately, we are thinking of getting a backup for that too... because our first one crashed. And I do have some stored online... but should probably get to work on getting even more of them stored there as well. It sounds like a chaotic mess I'm sure but they are all sorted so it does actually work really well for me.
I have even sorted my family's photos.
So, I think I have this issue mostly covered.
I suppose I could go through the little box that holds the ones I need to put away again.
Edited by KatieJo on 06-08-13 05:28 AM. Reason for edit: No reason given.
Posts: 152
Joined: 04-29-13
dorichatelain's Gallery
on 06-08-13 09:45 AM
In response to
I got this one handled.
Digital photos are stored on external hard drive.
Photos before digital is in a large drawer and stored in order of size of photo by event and or person.
Negatives are in the original envelopes and stored in a plastic shoe box in my craft room closet.
Posts: 765
Joined: 08-18-10
dabnat's Gallery
on 06-11-13 06:18 AM
In response to
Okay this one is kicking my back side every night...I have my digital photos sorted in a way that works for me. What I don't have done are the photos I brought home when my Grandpa passed away and all the photos from my parents house. And it seems that everyone keeps giving me more photos. I am about to get another set of Grandparent pictures but at least they are in albums in order. This one is going to take a while.
Posts: 60
Joined: 02-16-13
rgridings's Gallery
on 06-11-13 09:31 AM
In response to
I have all of my photos sorted by event. I have them stored in a file box until I can scrap them (which I really, really need to catch up on).
I do not have any negatives, so I don't have to worry about that.
Posts: 22451
Joined: 07-05-09
rockmom's Gallery
on 06-11-13 04:19 PM
In response to
dabnat Said:
Okay this one is kicking my back side every night...I have my digital photos sorted in a way that works for me. What I don't have done are the photos I brought home when my Grandpa passed away and all the photos from my parents house. And it seems that everyone keeps giving me more photos. I am about to get another set of Grandparent pictures but at least they are in albums in order. This one is going to take a while.
You are lucky to have those photos, embrace it! Just keep whackin' away at it.
Posts: 7898
Joined: 07-14-07
Vae's Gallery
on 06-11-13 08:29 PM
In response to
About 2 years ago I went through ALL my photos and memorabilia and organized them as best as I could and got a bunch of black ikea boxes. I didn't go through all the negatives but I do have one of those negative viewers and they are all in a photo box.
Last year when my mother passed away, I gathered everything I could find that was paperwork or photo. But they've been sitting in boxes in the garage. We just moved and they're all in the house now so I guess it's time for me to start going through them. It's going to take forever but it's about time I get it done.
Posts: 4755
Joined: 05-09-09
RedSquirrel's Gallery
on 06-12-13 02:01 PM
In response to
Yes, my digital photos are organised and I'm happy with them. They aren't sorted by scrappable and non-scrappable, but by event and date.
I have a couple of hundred printed that I haven't scrapped yet but I intend to. Those are kind of organised, as they only cover one vacation and a few events.
My problem is all my pre-digital photos. They were in storage until a year ago. Now most of them are inside one cupboard (except the strays that I keep finding in boxes or that DH hands to me). I was pretty organised until DH and I met nearly 20 years ago, with all the packets labelled and dated. But between meeting DH 20 years ago and moving abroad 8 years ago, I went with DH's filing system - which SO isn't a system.
So I have about 12 years of chaos that I haven't dared to delve into.
Posts: 12414
Joined: 05-01-09
stick's Gallery
on 06-23-13 09:36 AM
In response to
I'm okay with my photo storage - backed up on an EHD, and working files on my laptop. I organize by date and event. My problem is that I ALWAYS edit them - at least cropping and adjusting brightness/color/contrast - before printing, so it always takes me a while to get around to doing that because sometimes it just seems like such a chore. Which pretty much means the only actual photos I have on hand are the ones I printed for an immediate project.
I'm working on being better about this. I'd like to have a small stock of photos ready for whenever inspiration strikes, so I just started doing a handful of photos and sending them off for printing (I have them done at CostCo). My 'system' was to work on the photos that I already have scrappy ideas for, however vague those ideas may be.
Scrap Chica
Posts: 3663
Joined: 01-16-09
Scrap Chica's Gallery
Scrap Chica
on 06-23-13 02:29 PM
In response to
This is a very big hot mess for me, my digital photos are pretty organized right now in that I have them in files by date, then event or season, but I really want to re-organize them more by event or person because I even though dates are important to me, I no longer scrap chronologically, I scrap by inspiration now which usually means going by the event or person I am scrapping. Another problem with my digital photos are they vary from old heritage photos my mom has emailed me to photos I have taken in the past 20 years and I have printed some but not all, and I don't have them marked as to which have been printed, A BIG problem there. Also, I used to have them backed up on an external Hard drive but when my last PC crashed (had Windows Vista) and we bought another,(I now have Windows 7) I found that when I tried to access the EHD, it would freeze my computer, I guess my EHD is too old and not compatible, therefore I no longer have back-up. Not quite sure what to do since I don't have the funds for EHD or the online services that charge.
As far as my "printed" photos go, I have lots of heritage photos from family and of course photos from when I had a film camera and printed digital photos as well. They are in about4 different type photo boxes as well as envelopes, in a basket in my 3 drawer sterlite, in the cabinet of my nightstand (these are still in frames where I have removed them from the walls due to us moving in with DH's mom and her pictures are on our walls now, and I know I have photos in my big bin under my workspace with scrappable and non-scrappable memorabilia that needs to be purged as well.
Like I said a BIG hot mess here.
I like a lot of things that Jill talked about in the email, I know I need to start by going around the house and collecting all photos first thing. I like the idea of albums, unfortunately I have the correct page protectors but not the albums. I did just buy the photo organizer box that has all the little photo boxes (4x6)inside that I planned on using and labeling, but I would like to know Jill what do your albums hold versus what your 4x6 drawers hold, I mean are the albums for photos you already have page ideas for and the 4x6 drawers are all other photos that will eventually get scrapped or what?
I also know that I have 5x7 and 8x10 photos that won't fit so I need something for those, but the budget is at 0$ until after the first of July.
So.. I know that I personally have scrapped 5x7 photos before but I have never scrapped an 8x10 before, so my question is does anyone out there really scrap that size or do you scan that photo and print it in another size?
Also, for those that store by event, place, theme or person, do you just forget dates or do you also sort by date and theme or whatever?
I know that this one is going to last me personally much more than a week, especially the purging part, deciding what not to scrap, so any and all advice is much appreciated.
Posts: 3145
Joined: 09-10-10
Sewflake's Gallery
on 06-23-13 02:51 PM
In response to
Scrap Chica
Laura, When I started scrapping I was already soooo far behind, with the amount of picture I have to scrap, that I didn't bother to work chronologically! I work as the mood or mojo suits me, sometimes from a new paper I purchased, sometimes I have a photo sitting around that inspires me, other times it's from a challenge that the inspiration starts then I "build" my page from there. That being the case, I find that I organize my pictures by person, event, then with the date added somewhere so when my brain forgets it is written down. I also file my thoughts and any special notes I don't want to forget on a 3x4 card so it will be handy when I'm ready to scrap, those cards are what divides each group of pictures in a box.
If I have any 5x7 pictures printed then I usually will get those scrapped right away with no storage required!! I have done only two 8x10 picture pages, and after viewing them again, while in the process of working on week 8, I think I will have a few more printed that size, but again I would scrap them right away.
Scrap Chica
Posts: 3663
Joined: 01-16-09
Scrap Chica's Gallery
Scrap Chica
on 06-23-13 03:02 PM
In response to
Thank you Sewflake for that inspiration, I love your idea of the 3x4 cards, I believe I will be doing that as well.
I agree I am so behind it is too overwhelming at times, how many photos I have printed that are not scrapped, not only the heritage photos I have but I have tons of photos of my sister and I growing up, I have done some but not enough to even see a difference, she is almost 49 and I am 45, if that gives you any idea of the amount of years I have to scrap and my father was BIG picture taker and being military we were always traveling some where. I also have 3 children and have only scrapped each of their first year books, birth-1 yr birthday. So I have their lives left, not to mention, my 3 yr old dgd that has come along and DH's life and what heritage photos I have for him. All this sometimes is so overwhelming that I just sit at my scrappy desk and after and hour or so, still have no mojo and give up to walk away another day not scrapping, depressing actually, so for me this is really important that I figure out a system that works and inspiring!
Posts: 12414
Joined: 05-01-09
stick's Gallery
on 06-23-13 04:35 PM
In response to
Scrap Chica
Scrap Chica - I've scrapped very large photos. Mostly digiscrap, but the same concepts apply. Actually with digiscrapping I've done 12x12 photos - just enlarging a pic to be the entire page and adding embellies. I also like to use large panorama pics that are 3-6 inches high, but that take up the entire width of a page, or even the width of two pages.
With larger photos you're basically just making a frame for it with your background paper and embellies. You can go lush and complex with a lot of layered papers and embellies, or very simple with just matting and a title.
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Author Comments
The SS crew travels to Saturn! Where will they be next? Only I know!!
Leave a review, I respond to all!
Rated 5 / 5 stars July 26, 2006
Planet rific!
awesome, and their adventures to awesome planets!
good job with sunshine! :)
Rated 0.5 / 5 stars July 26, 2006
give it a rest, forever!
plz stop it man! these are so old! like 50 got submitted just today! If you put more time into these, instead of sending out millions, you would get more people to like you. think of the kittens, man!
Rated 5 / 5 stars July 26, 2006
The crew keeps being flat! They're so cool! Music, once again, great!
Lol, the sun is waving, now he's a bit too far from the Crew! How can the live without Mr. Sun?
Ringpops! Lol! That was hilarious, excellent joke!
Uhmm, I'm afraid I don't understand the old guy walking, could you explain me that?
Excellent episode! <3 SSC!
That is the greek god, Saturn
Rated 5 / 5 stars July 26, 2006
Still going strong
too many people are being whiney little bitches about all the slight variations with the same songs. How can oyu go wrong when you can find something from that same song to tickle your fancy?
What a bunch of whiney little whore to claim to "own you" for your brilliant work of animation! =D
Rated 5 / 5 stars July 26, 2006
A delightful animation, Newgrounds needs more.
will do


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text:
Coverage: RDS
7:00 PM ET, October 29, 2010
Nassau Veterans Memorial Coliseum, Uniondale, New York
A. Auld (Canadiens - G): Saves: 30, Save Pct.: .968
M. Martin (Islanders - LW): Goals: 1, Assists: 0
B. Pouliot (Canadiens - LW): Goals: 1, Assists: 0
UNIONDALE, NY - OCTOBER 29: The Hockey Fights Cancer emblem is displayed on a New York Islanders Helmet at a game against the Montreal Candiens on October 29, 2010 at Nassau Coliseum in Uniondale, New York. (Photo by Mike Stobe/NHLI via Getty Images)


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Files | Size | Format | Description | View | |
UBC_1984_A8 M32.pdf | 10.58Mb | Adobe Portable Document Format |
View/ |
Title: | Life style analysis from the individual's perspective |
Author: | MacKay, Betty A. |
Degree | Master of Arts - MA |
Program | Counselling Psychology |
Copyright Date: | 1984 |
Abstract: | This study sought to explore the Adlerian concept of life style analysis as experienced by the client. The population consisted of eight volunteer clients in therapy at a Mental Health Center. A life style analysis was conducted with each subject in two 2-hour sessions. Following the use of a cued memory technique, qualitative and quantitative data were collected for descriptive analysis. Qualitative data were collected through questions following each section of the life style analysis. Quantitative data were obtained using a semantic differential consisting of 12 bi-polar adjectives. Results for each subject were discussed in a case study format. Similarities and differences among subjects were outlined. The findings of this exploratory study were discussed. An unexpected finding was that the questions intended to elicit the experiences of the subjects tended to heighten those experiences and increase the potency of the life style procedure. The results of this study are useful for counsellors and therapists using and teaching life style analysis. They also give support to Adlerian theory regarding the life style concept. |
URI: | http://hdl.handle.net/2429/25163 |
Series/Report no. | UBC Retrospective Theses Digitization Project [http://www.library.ubc.ca/archives/retro_theses/] |
Scholarly Level: | Graduate |
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text:
Click here to print the obituary below
THELMA J. WHITMAN, 84, passed away on Monday, Dec. 17, 2012, at Parkview Regional Medical Center, Fort Wayne. Born in Manchester, Tenn., she provided a loving home for her family for many years. She was a member of North Park Community Church, and enjoyed playing card games, bowling, going out to dinner, shopping, gardening, and spending time with the grandchildren and great-grandchildren. Surviving are her husband of over 60 years, Ernest Whitman; sons, Timothy R. Whitman, Roger D. (Karry) Whitman and Brian S. (Kim) Whitman, all of Fort Wayne; daughters, Deborah L. (Dave) Cook and Patricia G. (Jim Kennedy) Fett, both of Fort Wayne; 13 grandchildren; and 16 great-grandchildren. She was preceded in death by her parents, J.F. and Sally Haley; brother, Kenneth W. Walise; and sister, Cora R Hale. Funeral service is 1 p.m. Friday, Dec. 21, 2012, at D.O. McComb & Sons Maplewood Park Funeral Home, 4017 Maplecrest Road, with calling one hour prior. Pastor Scott Qualls officiating. Calling also from 2 to 5 and 7 to 9 p.m. Thursday, Dec. 20, 2012,, at the funeral home. Burial in Highland Park Cemetery, Fort Wayne. Memorials may be made to Visiting Nurse & Hospice Home or Fresenius Medical Care Dialysis Services. To sign the online guestbook, visit
Published in Fort Wayne Newspapers on Dec. 18, 2012


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Posted January 4, 2008
A reviewer
This book was a favorite of my son 20 years ago.....and now I'm purchasing it for a baby shower! It is very entertaining, and more interesting than the average counting book.....with animals you may not be familiar with making their debut to the new reader.
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Microsoft releases Vista SP2 RC to public
Downloads available, but it's not yet on Windows Update
Computerworld - Microsoft Corp. yesterday quietly launched the release candidate of Windows Vista Service Pack 2 to the general public, making good on a promise from last week.
Vista SP2 RC can be downloaded today from Microsoft's Web site in versions for both 32- and 64-bit systems.
As first reported by Neowin.net, while Microsoft has made Vista SP2 RC available to the public, it has yet to change the download pages' titles to reflect that the files are the release candidate and not Beta 2. The file name of the disk image, however, reveals that it is, in fact, the release candidate: 6002.16670.090130-1715_iso_update_sp_wave0-RCSP2.0_DVD.iso.
"This build is the same build sent out to select testers last week," Neowin said.
A week ago today, Microsoft announced that it had wrapped up Vista SP2 RC and had posted it to TechNet and MSDN (Microsoft Developer Network), the subscription-based services that cater to IT professionals and developers. At the time, a company spokeswoman said that the release candidate would be offered to everyone else this week.
Microsoft has not nailed down a ship date for SP2, and in the past it has only said it plans to deliver final code during the second quarter of 2009.
Others, however, have pegged the release sooner rather than later. The Malaysian Web site TechARP.com, which has accurately predicted past Windows delivery dates, has said Vista SP2 is on track to launch no later than mid-May.
Users can download Vista SP2 RC as a stand-alone fresh installation disk image, as an update for the 32-bit version of Vista or as an update for the 64-bit version from Microsoft's site.
Although Microsoft will offer Vista SP2 SC through its Windows Update service -- as it did when it rolled out SP2 Beta 2 late last year -- it has not yet turned on that switch. Most people will use Windows Update to get SP2 RC, if only because downloads through the service will be significantly smaller, between 41MB and 90MB, as opposed to the 302MB to 508MB of the files available now.
Machines must be running Vista SP1 to download and install the SP2 release candidate.
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