A watch strap with a plurality of quickly interchangeable, decorative plates attached to express a person's characteristic or style. The watch strap allows for the removal of decorative plates on the watch strap via manipulating a “tab” attached to the plates. Another variation of the invention is to depress a button, attached to the plate, beneath the watch strap. The plates may also be removably secured via a plurality of screws.

The present invention relates to watch bands and, more particularly, to watch bands configured to changing a decorative appearance of the band.
Once a particular watch is manufactured, it continues to live life with the same appearance. This invention allows the ability to quickly change the appearance of your watch.
There are no other watch brand that allows a person to quickly remove decorative plates on their watch without the use of tools.
As can be seen, there is a need for an improved watch band with interchangeable decorative plates on a strap of the watchband.


A color wheel comprises sectorial color filter segments and a support member. Protrusions are disposed at the support member and engaged with either through-holes or cavities as segment fixing mechanisms formed at the color filter segments, whereby the color filter segments are fixedly positioned with respect to the support member in the radial direction. Consequently, the color filter segments can be surely prevented from getting scattered off when the color wheel spins at high speed.

1. Field of the Invention
The present invention relates to a color wheel suitable for use as a filter element of a time-share light dispersing device, and more specifically to a color wheel of segment type, and to a manufacturing method of a color wheel of segment type.
2. Description of the Related Art
Color composition in a projection-type image display apparatus has conventionally been accomplished commonly by a method, such as: a single-panel method, in which one light valve element adapted to control light amount per pixel thereby creating an image is used to disperse each pixel into R (red), G (green), and B (blue) lights; and a three-panel method, in which three light valve elements dedicated to R, G and B lights, respectively, are used to produce R, G and B images in parallel, and then the three images thus produced are composed. Recently, as a light valve element capable of fast switching, such as a ferroelectric liquid crystal display element or a digital micro-mirror device, is increasingly coming into practical use, a time-sharing single-panel method is widely used. In the time-sharing single-panel method, R, G and B lights are caused to sequentially impinge on one light valve element, the light valve element is driven in synchronization with switching-over of the R, G and B lights thereby producing R, G and B images in a time-series manner, and the images thus produced are projected onto a screen, or the like. Here, color composition of the images is accomplished by a viewer due to an afterimage effect occurring at a sense of vision. In the time-sharing single-panel method, reduction in both dimension and weight of the apparatus, which is a feature of a single-panel method, can be achieved by employing a relatively simple optical system, and therefore the time-sharing single-panel method is favorable for realizing inexpensive fabrication of a projection-type image display apparatus. In such an image display apparatus, a color wheel is preferably used as a filter element of a time-share light dispersing device to sequentially disperse light emitted from a white light source into R, G and B lights having respective wavelength bands in a time-sharing manner.
FIGS. 6A and 6B are respectively top plan and side views of a conventional and typical color wheel assembly 200 as a time-share light dispersing device including such a color wheel. Referring to FIG. 6B, the color wheel assembly 200 comprises a color wheel 150, and a driving motor 106 including a motor hub 105. The color wheel 100 is a tricolor color wheel composed of a disk-like substrate 101 which is made of a light-transmitting material, for example, optical glass, and three pie-shaped (sectorial) filters 102, 103 and 104 which are formed on a surface of the substrate 101, and which transmit exclusively, for example, R, G and B lights, respectively. The color wheel 150 thus structured is fixedly attached to the motor hub 105 coaxially therewith. The color wheel assembly 200 operates such that the color wheel 150 is spun by the driving motor 106 so that white light S impinges sequentially on the filters (R, G and B) 102, 103 and 104 whereby the white light S is sequentially dispersed into R, G and B lights.
There are two types of color wheel structures: a monolithic type structured such that respective color filters are formed on a disk-like substrate; and a segment type structured such that respective color filter segments separately prepared in a sectorial shape are fixedly attached to one another so as to form a disk.
FIGS. 7 and 8 shows respectively top plan and exploded side sectional view of a segment type color wheel 160 comprising a plurality (four in FIG. 7) of sectorial color filter segments 112, 114, 116 and 118 which are separately prepared and are fixed in position by means of a support member 120 so as to form a disk. In the color wheel 160 of FIGS. 7 and 8, a clamp member 122 is additionally employed in order to securely fix the color filter segments 112, 114, 116 and 118.
Specifically, as shown in FIG. 8, inner circumferences 112a, 114a, 116a and 118a of the color filter segments 112, 114, 116 and 118 are fitted to an outer circumference of a smaller cylinder portion 120a of the support member 120 whereby the color filter segments 112, 114, 116 and 118 are duly set in position in the radial direction of the color wheel 160, and surfaces thereof toward the inner circumferences 112a, 114a, 116a and 118a are fitted to an annular seat portion 120b of the support member 120 whereby the color filter segments 112, 114, 116 and 118 are duly set in position in the thickness direction of the color wheel 160. Then, a smaller cylinder portion 122a of the clamp member 122 is engagingly inserted into a hollow 120c of the support member 120 so that an annular seat portion 122b of the clamp member 122 and the aforementioned annular seat portion 120b of the support member 120 sandwich and clamp the inner circumferential portions of the color filter segments 112, 114, 116 and 118. And, when the support member 120 and the clamp member 122 are bonded or screwed together, the color filter segments 112, 114, 116 and 118 are fixed in position. The color wheel 160 thus structured is fixedly attached to a motor (such as the driving motor 106 as shown FIG. 6B) via a hub (such as the hub 105 as shown in FIGS. 6A and 6B) such that the hub is inserted in the hollow 122c of the clamp member 122 constituting the color wheel 160 (refer to, for example, Japanese Patent Applications Laid-Open Nos. 2004-101827 ([0010], and FIG. 6) and H10-48542 (claim 1, and FIG. 2).
In the monolithic type structure, it does not happen that the color filters are scattered off when the color wheel spins at high speed. On the other hand, in the segment type structure, as described above, the color filter segments 112, 114, 116 and 118 separately prepared are fixed, for example, adhesively to the support member 120, so all the components must be securely fixed to one another in order to prevent the color filter segments from getting scattered off when the color wheel 160 spins at high speed. Consequently, the number of man-hour for a bonding process and an inspection process is increased in order to fully ensure the bonding strength, which results in an increased cost.

Color wheel with segment fixing mechanisms, and manufacturing method of same


Provided is an information processing device including an output control unit that controls presentation of content to a user, and when a non-viewing/listening period is detected in a viewing and listening behavior of the user corresponding to the content, causes a summary of the content to be output. The output control unit determines an amount of information in the summary of the content, based on the length of the non-viewing/listening period. Moreover, provided is an information processing method including: by a processor, controlling presentation of content to a user; and when a non-viewing/listening period is detected in a viewing and listening behavior of the user corresponding to the content, causing a summary of the content to be output. The causing the summary of the content to be output further includes determining an amount of information in the summary of the content, based on the length of the non-viewing/listening period.

In recent years, various devices that present information to users in voice and visual information have been growing increasingly. Moreover, a technology has been developed to improve the convenience of users, when the presentation of information is interrupted or resumed. For example, Patent Literature 1 discloses a technology for controlling the resume position of speech to be resumed according to the interruption time, at the time when voice speech is resumed.

Information processing device and information processing method


The present invention relates to a FEMFET device with a semiconductor substrate and to at least one field effect transistor that is provided in the semiconductor substrate. The field effect transistor has a source area, a drain area, a channel area and a gate stack. The gate stack has at least one ferroelectric layer and at least one thin diffusion barrier layer being arranged between the lowest ferroelectric layer and the semiconductor substrate and being configured in such a way that an out-diffusion of the components of the ferroelectric layer into the semiconductor substrate is essentially prevented.

The present invention relates to a FEMFET device (FEMFET=ferroelectric memory field-effect transistor) as described in the preamble of claim 1, which is known from EP 0 566 585 B1.
EP 0 566 585 B1 discloses, in general terms, a memory cell arrangement which, as memory cells, has field-effect transistors with a ferroelectric layer (FEMFETs) in the gate dielectric. In that document, it is recommended in particular for the gate dielectric to be designed as a multilayer dielectric, in which a first SiO2 layer is provided on the substrate, above which there is the ferroelectric layer, followed by a second SiO2 layer, to which the gate electrode, for example made from polycrystalline silicon, is applied.
Recently, in the microelectronics sector ferroelectric materials, generally perovskites, have been used to fabricate nonvolatile memory elements. The spontaneous and residual electrical polarization of these materials allows non-volatile storage of charge and therefore information. The ferroelectric materials are usually used either as dielectric layer in a capacitor or in the gate stack of a field-effect transistor.
A field-effect transistor with ferroelectric gate material forms the starting point for the construction of, for example, nonvolatile one-transistor memory cells with extremely short write,erase (unlike EEPROMs) and read times. The residual polarization of the ferroelectric material above the channel of a field-effect transistor and the resultant electric field allow different states, such as inversion or accumulation, to be xe2x80x9cstoredxe2x80x9d in the semiconductor substrate (channel) below. The operating state and the conductivity of the transistor can therefore undergo nonvolatile change through the ferroelectric. The fact that a component of this type can be used to store information and distinguish between logic states is attributable to this property. Information is stored by applying a sufficiently high voltage to the ferroelectric material. As a result, the polarization of the material can be changed (reversed) suitably.
The general problem on which the present invention is based is that of being able to eliminate the need to deposit ferroelectric material immediately above the channel, i.e. directly on the semiconductor substrate, in order to obtain functioning transistors or transistors with good electrical properties.
Poor interfacial properties destroy the function of the component.
Therefore, it has been proposed for one or more additional dielectric layers (what are known as dielectric buffer layers) to be provided between the substrate and the ferroelectric material. On the one hand, they are to ensure a sufficiently good interface with the silicon and therefore good transistor properties, yet on the other hand they are to have the minimum possible effect on the performance of the component.
Ferroelectric materials generally have a very high dielectric susceptibility (high relative dielectric constant xcex5r of a few hundred to 1000).
In the ferroelectric field-effect transistor, the semiconductor substrate, the dielectric buffer layer and the ferroelectric form a series circuit of different capacitances. To allow the polarization of the ferroelectric material to be changed using low voltages, it is therefore necessary for the dielectric buffer layer to have the highest possible xcex5r and a low layer thickness d, since otherwise most of a voltage which is applied to this combination of layers will drop off across the intermediate layer rather than across the ferroelectric. Otherwise, this leads to high programming voltages and the risk of electrical breakdowns in the layers. In particular, it should be ensured that the formation of natural or process-related SiO2 at the semiconductor substrate/intermediate layer interface is avoided, since SiO2 has an adverse effect on the properties of the transistor, i.e. leads to higher programming voltages, on account of its low xcex5r (high voltage drop). To bypass these problems, it has been proposed to use stable oxides with a high dielectric susceptibility, such as for example CeO2, Y2O3 or ZrO2, as dielectric buffer layer.
The fact that diffusion processes between individual constituents of the ferroelectric material and the semiconductor substrate likewise have a very adverse effect on the transistor properties has proven to be a drawback of the known approaches described above. Although this problem could be counteracted by increasing the layer thickness d of the dielectric buffer layer, this, as has been mentioned, would increase the risk of electrical breakdowns.
Therefore, it is an object of the present invention to improve the FEMFET device defined in the introduction in such a manner that the disruptive diffusion processes are eliminated without having an adverse effect on the electrical properties.
According to the invention, this object is achieved by the FEMFET device described in claim 1 and by the corresponding fabrication process described in claim 6.
Compared to the known solution approaches, the FEMFET device according to the invention has the advantage that there is no longer any disruptive diffusion and, at the same time, the gate stack does not become excessively thick.
The idea on which the present invention is based is for the gate stack to have at least one thin diffusion barrier layer which is arranged between the bottom ferroelectric layer and the semiconductor substrate. Depending on the ferroelectric used, the thin diffusion barrier layer is configured in such a manner that it substantially prevents constituents from diffusing out of the ferroelectric layer or layers into the semi-conductor substrate.
The subclaims provide advantageous refinements and improvements to the FEMFET device described in claim 1.
According to a preferred refinement, the diffusion barrier layer has a silicon nitride layer.
According to a further preferred refinement, the silicon nitride layer is provided directly on the semi-conductor substrate. The usual ferroelectric transistors are exclusively based on the use of ceramic oxides as dielectric intermediate layer. Silicon nitride in combination with prior cleaning of the substrate (removal of the natural oxide), as a new material at this location, offers many advantageous, in particular a good quality of the interface, a sufficiently high relative dielectric constant and, finally, its excellent action as a diffusion barrier even with very small layer thicknesses.
According to a further preferred refinement, at least one dielectric buffer layer is provided in the gate stack between the ferroelectric layer and the semi-conductor substrate. In this way, it is possible to increase the capacitance of the gate stack combined with simultaneous resistance to diffusion.
According to a further preferred refinement, the dielectric buffer layer is provided directly on the semiconductor substrate. This is expedient if the dielectric buffer layer and the semiconductor substrate have good interfacial properties.

FEMFET device and method for producing same


A thin hearing tube is to be fastened in a hearing apparatus such that it can be easily exchanged again. To this end, the end of the sound tube is melted, so that its diameter is enlarged. The sound tube can then be drawn into the bore, the inner diameter of which is smaller than the enlarged outer diameter of the end of the sound tube, until the extended end of the sound tube rests closely against one side of the bore. By cutting the sound tube end or by cutting through the tube at another point, it can be removed from the bore without any problem, so that a new tube can be fastened there.

Hearing devices which do not require individual otoplastics have been available on the market for some time. Plastic plugs take the place of the otoplastics in this case. The acoustic characteristics of such plugs nevertheless restrict the universal applicability of these types of hearing device. To provide for more severe hearing loss, in many cases acousticians glue a conventional otoplastic or an ITE shell (in-the-ear) to the sound tube instead of the plug.
The tubes used in hearing devices are however exposed to the prevailing environmental conditions and are thus subject to an increased ageing process. Consequently, the problem consists in the tubes having to be exchanged again after some time. This is however not easily possible due to the minimal diameter and the material used for the tube. The otoplastics and ITE shells can only be reused, if at all, by counterboring the tube element glued thereto. Reuse involves cutting the new piece of tube to the corresponding length and re-gluing it into the bore of the otoplastic and/or ITE shell.
The publication DE 20 2005 004 245 U1 discloses an in-the-ear hearing device shell. A sound tube is fastened to a flange by pulling the tube over said flange. A groove in the flange is used to fix the tube.
Furthermore, the patent application DE 195 23 991 B4 describes a hearing device having a suspended earpiece and a sound tube. The suspended earpiece also features a rotating groove at the end at which the sound tube is disposed.
Finally, the publication DE 94 06 801 U1 discloses a sound tube, which is held in place by means of an integrally molded annular collar on the front shoulder of a tubular support.

Fixing a sound tube in a hearing apparatus


A DC to DC power converter device includes a controller, and a DC to DC resonant converter that includes first and second full bridge chopper circuits (FBCCs) and an LLC resonant converter coupled between the first and second FBCCs. To cause the DC to DC resonant converter to operate in a conversion mode where an input voltage received by the second FBCC is converted to an output voltage provided by the first FBCC, the controller controls switches of the second FBCC and switches of the first FBCC to transition between an ON state and an OFF state with the ON state reoccurring at a frequency lower than a resonant frequency of the DC to DC resonant converter, so that the output voltage can be higher than the input voltage.

A conventional direct current to direct current (DC to DC) LLC converter has a first side and a second side, and includes a first full bridge chopper circuit coupled to the first side, a second full bridge chopper circuit coupled to the second side, and an LLC resonant circuit coupled between the first and second full bridge chopper circuits. Each of the first and second full bridge chopper circuits includes four power switches. The LLC resonant circuit includes a resonant capacitor, a resonant inductor and a transformer.
A conventional control method for controlling transition of the power switches of the first and second full bridge chopper circuits between an ON state and an OFF state can cause the conventional DC to DC LLC converter to perform either step-up or step-down conversion in a direction from the first side to the second side (with the first side serving as the input side and the second side serving as the output side), can cause the conventional DC to DC LLC converter to perform step-down conversion in a direction from the second side to the first side (with the second side serving as the input side and the first side serving as the output side), but cannot cause the conventional DC to DC LLC converter to perform step-up conversion in the direction from the second side to the first side.

DC to DC power converter device capable of either bidirectional step-up conversion or bidirectional step-down conversion, and control method thereof


A cover for a DEF assembly with openings dimensioned to receive various components that are positioned in the DEF holding tank and associated seals for closing the openings and retaining the components is disclosed. The seals are fixed to the cover by a sonic weld.

Diesel exhaust fluid (DEF) is used in diesel engines in order to reduce pollution generated by the engine. DEF is typically made of a urea solution and is configured to reduce nitrogen oxides (NOx) into water and nitrogen, which drastically reduces the polluting effect of the engine exhaust.
DEF tanks or modules are separate from other engine components due to urea being corrosive to metal. Additionally, DEF has a freezing point around 12° F. and therefore must be heated in order to ensure that DEF remains liquid and can be pumped from the DEF tank to the exhaust pipeline. One method of ensuring that the DEF is maintained at the proper temperature is to provide a heating element within the DEF tank. Sensor assemblies also monitor the DEF temperature and provide alerts or indications when DEF levels in the tank are low.
Due to these various requirements, it is critical that components or tubing passing thorough the cover are properly and reliably sealed.

Diesel exhaust fluid (DEF) module cover and sensor assembly


Provided is a filler for dental glass ionomer cements, the filler to a surface of which a compound(s) having a carboxyl group(s) is/are bound via a silicon atom, for the purpose of providing: a filler suitable for dental glass ionomer cements that can provide a hardened cement having a high strength by being mixed with a dental glass ionomer cement composition, the filler that can be easily manufactured from a general inorganic powder as a raw material; and a manufacturing method of the filler for dental glass ionomer cements. The manufacturing method includes binding a carboxylic acid having an unsaturated double bond(s) exclusive of a (meth)acrylate compound to an inorganic powder whose surface is treated with a silane coupling agent having an unsaturated double bond(s).

In using dental glass ionomer cements, α-β unsaturated carboxylic acid polymers such as polycarboxylic acid, and fluoroaluminosilicate glass powders are allowed to react to each other to be hardened, in the presence of water. These dental glass ionomer cements are widely used in dentistry, because they have excellent characteristics, for example very good biocompatibility, excellent aesthetic property of semi-transparent hardened body, excellent adhesion to tooth substrates such as enamel and dentine, and an anticariogenic effect by fluoride contained in glass.
A general dental glass ionomer cement is formed from a powder component and a liquid component, and therefore has a demerit that its handling such as measuring and mixing are troublesome. The applicant of the present invention previously developed a glass ionomer cement composition in a paste form consisting of a first paste whose main components are an α-β unsaturated carboxylic acid polymer, water, and a filler that does not react with the α-β unsaturated carboxylic acid polymer, and a second paste whose main components are a fluoroaluminosilicate glass powder and a polymerizable monomer not having an acid group, wherein a polymerization initiator is mixed with at least either one of the pastes, depending on the polymerization method of the polymerizable monomer (see Patent Literature 1 for example).
However, the strength of a hardened body of the dental glass ionomer cement composition is insufficient. This is because the interaction between the filler that does not react with the α-β unsaturated carboxylic acid polymer and the base component of the cement (the α-β unsaturated carboxylic acid polymer and fluoroaluminosilicate glass) is weak.
Against this problem, a filler for dental materials including: a particle of feldspar or feldspar derivative coated by a silicon compound containing a reactive group; and a polymerizable resin that can react with the reactive group is disclosed (see Patent Literature 2 for example). However, the strength of a hardened body of this filler is insufficient, because the interaction of the filling material with main components of cement is weak. In addition, feldspar is a natural product, whose composition is inhomogeneous, and metal contained in feldspar easily elutes in the presence of water. As such, feldspar is not a suitable filling material for glass ionomer cements.
In order to solve this problem, suggested is a filler whose surface is treated with a polyacid selected from the group consisting of homopolymers and copolymers of acrylic acid, maleic acid, itaconic acid, methacrylic acid, and combinations thereof, and with aminoalkyltrialkoxysilane as a linking group (see Patent Literature 3 for example). However, this surface treatment tends to be troublesome and cost a lot, and has a problem that the surface easily gets uneven and a stable effect is difficult to be obtained.

Filler for dental glass ionomer cement and method for manufacturing the same


A multi-touch touch panel and a method of detecting touches is disclosed. The touch panel comprises at least one hole in an active region of the touch panel, having a selected size for mechanically mounting a respective user input device.

The present invention relates to a display arrangement. In particular, but not exclusively, the present invention relates to a combined display and touch panel together providing a touch screen that includes at least one user input device incorporated wholly or in part within a region that is both a visual area of the display and a touch sensitive region of the touch panel.
Many input devices are known which human operators can interact with to thereby provide an input indicating a selection. For example conventional input devices include mechanical input devices like mechanical buttons or keys or track balls or sliders. Other types of input devices like touch screens or NFC readers are also known. Touch screens in particular are increasingly popular and these allow a user to make selections and indicate choice by touching a surface of a touch panel in one or multiple locations with those locations being associated with regions displayed on an underlying display screen. By correlating detected touch positions in the plane of the touch panel with corresponding display positions in the plane of the underlying display a user can select one or more choices. Such selection can be used to indicate an instruction or for many other purposes.
Conventionally touch screens include a touch panel, a controller and a software driver. A touch panel is a clear panel with a touch sensitive surface. The touch panel is positioned in front of a display so that the touch sensitive surface covers the viewable area of the display screen. The touch panel and associated screen together can be referred to as a touch screen or display arrangement.

This patent is subject to a terminal disclaimer.


A toner for electrostatic image development containing a resin binder and a releasing agent, wherein the resin binder contains a polyester A having a furan ring, and wherein the releasing agent contains an ester wax, and a method for producing the toner. The toner for electrostatic image development of the present invention can be suitably used in, for example, the development or the like of latent image formed in electrophotography, an electrostatic recording method, an electrostatic printing method, or the like.

With the trends of reduction in energy consumption and speeding-up of printing speeds in the recent years, a toner having low-temperature fusing ability is in demand. In order to meet this demand, toners containing ester waxes have been numerously studied.
For example, it is disclosed that a toner in which a specified ester wax and a specified aliphatic hydrocarbon polymer are used has a good balance between storage property and low-temperature fusing ability, the toner further having excellent offset resistance and durability (see Patent Publication 1 (Japanese Patent Laid-Open No. 2007-271939)).
In addition, it is disclosed that a toner in which a specified ester wax and a specified petroleum wax are used has excellent properties in both fusing ability and durability, especially jumping property in the jumping development method (see Patent Publication 2 (Japanese Patent Laid-Open No. 2005-141189)).
On the other hand, the use of biomass raw materials are earnestly desired, from the viewpoint of reduction in environmental loads.
For example, it is disclosed that a thermoplastic resin characterized in that the thermoplastic resin has a furan structure, and has a reducing viscosity (ηsp/C) of 0.48 dL/g or more, and a terminal acid value of less than 200 μeq/g has excellent heat resistance, mechanical properties, and weathering resistance (see Patent Publication 3 (Japanese Patent Laid-Open No. 2008-291243)).
In addition, it is disclosed that a polyester resin having a specified structural unit of a furan ring has excellent impact resistance, and is suitable for materials for producing molding articles (see Patent Publication 4 (Japanese Patent Laid-Open No. 2009-197110)).

Toner for electrostatic image development


An integrated circuit includes a silicon substrate, a ground plane above the substrate, a buried insulator layer above the ground plane, a silicon layer above the buried insulator layer and separated from the ground plane by the buried insulator layer, and an FDSOI transistor. The transistor has a channel adapted for being formed in the silicon layer, a source and drain in and/or on the silicon layer, and a gate covering an upper face of the channel and having a lateral portion covering a lateral face of the channel and above the ground plane. A distance between the lateral portion and the ground plane is not more than three nanometers and at least five times less than a thickness of the buried insulator layer between the ground plane and the silicon layer. The ground plane is separated from the gate by the buried insulator layer.

SOI technology consists in separating a fine silicon layer (a few nanometers) on a silicon substrate by a relatively thick insulator layer (a few tens of nanometers, as a general rule).
Integrated circuits produced with SOI technology exhibit certain advantages. Such circuits generally exhibit lower electrical consumption for equivalent performance. Such circuits also induce lower parasitic capacitances, which make it possible to improve switching speed. Moreover, the phenomenon of parasitic triggering (known as "latchup") encountered by Bulk-technology MOS transistors can be avoided. Such circuits therefore turn out to be particularly suitable for applications of SoC or MEMS type. It is also noted that SOI integrated circuits are less sensitive to the effects of ionizing radiations and thus turn out to be more reliable in applications where such radiations may induce operating problems, in particular in space applications. SOI integrated circuits may in particular comprise random-access memories of SRAM type or logic gates.
The reduction in the static consumption of logic gates while increasing their tripping speed forms the subject of much research. Certain integrated circuits under development integrate logic gates with low consumption and also logic gates with high tripping speed. To generate these two types of logic gates on one and the same integrated circuit, the threshold voltage of certain transistors of the logic gates with fast access is lowered, and the threshold voltage of other transistors of the logic gates with low consumption is increased. In Bulk technology, the modulation of the threshold voltage level of transistors of the same type is performed by differentiating their channel doping level. However, in FDSOI (for Fully Depleted Silicon On Insulator) technology, the doping of the channel is almost zero (1015 cm−3). Thus, the doping level of the channel of the transistors therefore cannot exhibit significant variations, thus preventing differentiation of the threshold voltages in this manner. A solution proposed in certain studies for producing transistors of the same type with distinct threshold voltages is to integrate various gate materials for these transistors. However, the practical production of such an integrated circuit turns out to be technically tricky and economically prohibitive.
In order to have distinct threshold voltages for various transistors in FDSOI technology, it is also known to use a back gate or a biased ground plane disposed between a thin insulating oxide layer (TBOX or UTBOX) and the silicon substrate. By altering the doping of the ground planes and their bias, it is possible to define a range of threshold voltages for the various transistors. It will thus be possible to have low-threshold-voltage transistors termed LVT (for "Low Vt", typically 400 mV), high-threshold-voltage transistors termed HVT (for "High Vt", typically 550 mV) and medium-threshold-voltage transistors termed SVT (for "Standard Vt", typically 450 mV).
Various designs have been developed in order to optimize the electrostatic control of the channel of such transistors (quantified in particular by the values DIBL (for drain-induced barrier lowering) and without SS (for subthreshold swing)).
According to a first design entitled 3DFDSOI, the channel exhibits a width that is greater than its thickness (dimension according to the perpendicular to the insulating oxide layer) and the gate envelops the lateral faces and also the upper face of the channel.
According to a second design known by the term "Tri Gate," the channel exhibits a width that is roughly equivalent to its thickness and the gate envelops the lateral faces and also the upper face of the channel. Overall it is considered that the number of gates acting on the channel is multiplied.
According to a third design known by the term "FinFET," the channel exhibits a width that is less than its thickness and the gate envelops the lateral faces and also the upper face of the channel.
The general aim of these designs is to maximize the coverage of the channel by the gate. Among these designs, it is generally considered that the higher the ratio of the thickness to the width of the channel:                the more a high electrostatic control of the channel is obtained;        the more complex the method of fabrication of the transistor;        the more the method of fabrication of the transistor comprises dispersions in the channel width and in the threshold voltage; and        the less the threshold voltage of the transistor can be adapted by biasing its back gate.
Thus, with a design of the FinFET type, it turns out to be particularly tricky to produce integrated circuits comprising transistors having different threshold voltages or dynamically configurable threshold voltages. It is in particular tricky to compensate the dispersions of the threshold voltage by biasing the back gate.

Transistor with coupled gate and ground plane

Commissariat a l'energie atomique et aux energies alternatives


An adjustment assembly adjustably couples enclosures, such as a meter breaker panelboard and a load distribution panelboard, in a back-to-back configuration within a structure, such as a wall. The adjustment assembly includes a first end member at or about the top end of one of the enclosures, a second end member at or about the bottom end of the other enclosure, and at least one fastener coupling the end members together. A number of elongated apertures in at least one of the end members, such as slots and arcuate apertures, provide translational and pivotal adjustment, respectively. The fastener, which may comprise bolts and wingnuts to enable such adjustment without requiring separate tools, extends from one enclosure through at least one of the elongated apertures in the end member of the other enclosure in order to couple the enclosures together while enabling adjustment of one enclosure with respect to the other.

1. Field of the Invention
The present invention relates generally to enclosures and, more particularly, to enclosures which are coupled together in a back-to-back configuration. The invention also relates to an adjustment assembly for back-to-back enclosure assemblies.
2. Background Information
Buildings, such as for example, commercial buildings and residences, typically have an electrical distribution center with one or more enclosures, such as for example, boxes or cabinets, which house electrical equipment (e.g., without limitation, relays; circuit breakers; meters; transformers). The enclosures protect the electrical equipment. For example, when mounted on the exterior of the building, the enclosure generally shields the enclosed electrical equipment from the environment and, in particular, damage caused by moisture. Whether disposed on the interior or the exterior of the building, the enclosure typically also includes a door or access panel, and thus serves the additional purpose of resisting undesired access to the electrical equipment housed within the enclosure.
In certain applications, two or more enclosures are employed in a back-to-back configuration. For example, one enclosure, such as a load distribution panelboard, is mounted on the interior of the building with its back facing the opposite direction of the back of another enclosure to which is coupled. The other enclosure may be, for example, a meter breaker panelboard which is accessible from the exterior of the building. In other words, the load distribution panelboard and the meter breaker panelboard are coupled together and mounted back-to-back on the same wall of the building. The load distribution panelboard is disposed on the inside surface of the wall and the meter breaker panelboard is disposed on the exterior of the wall. Accordingly, the two panelboards, which are normally separate devices, are joined together.
Known back-to-back enclosure designs suffer from a number of disadvantages, including the fact that the load distribution panelboard, which faces the interior of the building, is typically fixedly fastened to the meter breaker panelboard, thus making it stationary and rendering it substantially incapable of being adjusted. Accordingly, once the enclosures are installed, the load distribution panelboard, which is typically mounted in a semi-flush orientation, cannot be adjusted by the installer as necessary to, for example, accommodate various wallboard or other substrate thicknesses, and/or other deviations or irregularities. The fit and finish of the installation can, therefore, be compromised.
Accordingly, there is room for improvement in back-to-back electrical enclosure assemblies.

Adjustment assembly for back-to-back enclosures, and back-to-back enclosure assembly employing the same


A heated floor panel system for an aircraft, the floor panel system comprising a floor panel element including a panel structure and a panel heater device, a temperature sensor device for detecting the temperature at the floor panel element, and a connector device connected to the floor panel element, wherein the connector device comprises a power link for providing an electric power connection between the panel heater device and an electric power supply, and a data link for providing a data connection between the temperature sensor device and a control unit. An object of the present disclosure, to provide a floor panel system including a floor panel element which has a possibly simple construction and which can be used independently from the connector device, is achieved in that the temperature sensor device is located in the connector device and connected to the floor panel element via a thermal conductor element.

The floor panel system comprises a floor panel element, a temperature sensor device, and a connector device. The floor panel element includes a panel structure for transmitting forces applied to the floor panel, e.g. by passengers, and a panel heater device for heating the floor panel element. The panel heater device may be formed, e.g., as a heater layer, and may preferably be integrated into the panel structure. The temperature sensor device is configured for detecting the temperature at the floor panel element, in particular at one or more specific locations of the panel heater device and/or of the panel structure. The connector device is connected to the floor panel element, preferably from the outset of the floor panel element. The connector device comprises a power link for providing or supporting an electric power connection between the panel heater device and an electric power supply. Further, the connector device comprises a data link for providing or supporting a data connection between the temperature sensor device and a control unit, wherein data may be transferred analog or digitally. Preferably, the control unit relates to the Ice Protection Control Unit (IPCU).
Such floor panel systems are known in the art and commonly used in passenger aircrafts. The known floor panel systems comprise a temperature sensor device which is located inside the floor panel element. The connector device comprises a connector case which is fixedly connected to the floor panel element, and which is connected to the temperature sensor device via internal sensor wiring as well as to the panel heater device via internal heater wiring. The connector device further comprises a power and data cable at its one end fixedly connected to the connector case and at its other end removably connected to the Ice Protection Control Unit. However, such floor panel systems have a rather complicated construction which does not allow that the floor panel element and the connector device can be separated from one another and used independently. When one of the floor panel element and the connector device has to be replaced, e.g. due to a defect or maintenance, the entire floor panel system has to be replaced.

Heated floor panel system for an aircraft


An element isolation region for electrically isolating an element region where an element is to be formed is formed in a semiconductor substrate. A gate insulating film is formed on the semiconductor substrate in the element region. A gate electrode is formed on the gate insulating film. Source/drain regions are formed to be separated from each other in a surface region of the semiconductor substrate. The source/drain regions sandwich a channel region formed below the gate insulating film. Gate sidewall films are formed on the two side surfaces of the gate electrode. Silicide films are formed on the source/drain regions so as to be separated from the element isolation region.

1. Field of the Invention
The present invention relates to a semiconductor device including a field-effect transistor using a salicide (self-aligned silicide) structure and a method of fabricating the same.
2. Description of the Related Art
A transistor using a salicide structure is a structure most often used as a method of reducing the parasitic resistance on a contact junction or gate electrode (e.g., Jpn. Pat. Appln. KOKAI Publication No. 11-8387).
A salicide structure is as follows. As shown in FIG. 1, after a gate electrode 101 is formed, an insulating film such as an oxide film which does not react with a silicide material is left behind as a gate sidewall film 102 on the side surface of the gate electrode 101. On this structure, a metal film for forming a silicide is formed. The silicon and metal are caused to react with each other by heat, thereby forming silicide films 104 in self-alignment on exposed source/drain regions 103.
Recently, the advance of the scaling (downsizing) of devices makes it necessary to shallow contact junctions (to form shallow junctions). However, it is difficult to scale the silicide reaction layer itself, and this is one cause which interferes with the scaling of source/drain regions. Especially in portions of an element region(active region) near the edges of an element isolation region 105 using STI (Shallow Trench Isolation), it is difficult to control ion implantation or diffusion to the same depth as a flat portion separated from the edges. This deteriorates the margin to a junction leak on the junction surfaces between the source/drain regions 103 and a semiconductor substrate 106 when a salicide structure is formed.

Semiconductor device including field-effect transistor using salicide (self-aligned silicide) structure and method of fabricating the same


Disclosed is a cathode material comprising a mixture of an oxide powder (a) defined herein and an oxide powder (b) selected from the group consisting of an oxide powder (b1) defined herein and an oxide powder (b2) defined herein and a combination thereof wherein a mix ratio of the two oxide powders (oxide powder (a):oxide powder (b)) is 50:50 to 90:10. The cathode material uses a combination of an oxide powder (a) and 50% or less of an oxide powder (b) which can exert high capacity, high cycle stability, superior storage stability and high-temperature stability, thus advantageously exhibiting high energy density and realizing high capacity batteries.

In recent years, chargeable and dischargeable secondary batteries are widely used as energy sources of wireless mobile equipment. Of these, lithium secondary batteries are generally used due to advantages such as high energy density, discharge voltage and power stability.
Lithium secondary batteries use metal oxide such as LiCoO2 as a cathode material and carbon as an anode material and are fabricated by inserting a polyolefin-based porous membrane between an anode and a cathode and swelling a non-aqueous electrolyte containing a lithium salt such as LiPF6. LiCoO2 is commonly used as a cathode material for lithium secondary batteries. LiCoO2 has several disadvantages of being relatively expensive, having low charge/discharge capacity of about 150 mAh/g and unstable crystal structure at a voltage of 4.3 V or higher and the risk of reacting with an electrolyte to cause combustion. Furthermore, LiCoO2 is disadvantageous in that it undergoes great variation in physical properties depending upon variation in parameters in the preparation process thereof. In particular, cycle properties and high-temperature storage properties at high electric potential may be greatly varied depending on partial variations of process parameters.
In this regard, methods to make batteries containing LiCoO2 operate at high electric potential, such as coating the outer surface of LiCoO2 with a metal (such as aluminum), thermally treating LiCoO2, or mixing LiCoO2 with other materials, have been suggested. Secondary batteries comprising such a cathode material exhibit low stability at high electric potential or have a limitation of application to mass-production.
In recent years, secondary batteries receive great attention as power sources of electric vehicles (EVs), hydride electric vehicles (HEV) or the like which are suggested as alternatives to conventional gasoline vehicles, diesel vehicles or the like using fossil fuels to solve air pollution caused thereby. Use of secondary batteries is expected to further increase and the above problems and problems associated with stability of batteries and high-temperature storage properties at high electric potentials arise.
In an attempt to solve the problems of LiCoO2, methods using a mixture of two or more different lithium transition metal oxides as a cathode material were suggested. These methods solve the drawbacks of a cathode material in which the respective lithium transition metal oxide is used singly.
However, conventional mixture-type cathode materials have a limitation of the difficulty of obtaining superior synergetic effects to the case of simple combination of two ingredients.

Cathode materials having high energy density and lithium secondary battery containing the same


A method and arrangement of multiplexing a plurality of serial data using wired-OR, are disclosed. The serial data are respectively generated from a plurality of serial data generators in a predetermined order. When the serial data from the serial data generators are interrupted, the transmission pause for a first predetermined time duration is detected. Following this, a serial data generation pause pulse is generated at each of the serial data generators. Subsequently, in response to the serial data generator pause pulse, the serial data is generated from one of the serial data generators according to the predetermined order. A reset signal issues when a predetermined number of serial data generating pause pulses is generated within a second predetermined time duration. In response to the reset signal thus generated, the predetermined order is initialized. Subsequently, the serial data are generated and multiplexed according to the predetermined order initialized.

1. Field of the Invention
The present invention relates generally to a method and arrangement of multiplexing a plurality of serial data using "wired-OR" connection. The plurality of serial data, before being multiplexed, are generated from the corresponding parallel data via parallel/serial conversion.
2. Description of the Prior Art
It is known in the art to multiplex or combine a plurality of serial data in the same transmission medium using a so called "wired-OR" connection.
Before turning to the instant invention it is deemed preferable to discuss, with reference to FIGS. 1-6, a known arrangement of multiplexing a plurality of serial data using "wired-OR" coupling.
Reference is made to FIG. 1, wherein there is shown an overall arrangement of a multiplexor 10 in block diagram form. The multiplexor 10 includes four circuit units 12a-12d arranged in parallel. Each of the units 12a-12d, which may be configured using LSI (Large Scale Integration) techniques, is provided with a parallel data input PI, two address inputs ADa and ADb, a serial data output SO, and a reset terminal R.
The units 12a-12d are arranged to convert respectively the parallel data PDT1-PDT4 applied thereto at the inputs PIs into the corresponding serial data which are respectively outputted as SD1-SD4 in a predetermined transmission order.
Each pair of the address inputs ADa and ADb of the units 12a-12d, received address bits (2 bits in this instance) which are used to discriminate or specify one of the units 12a-12d in order to define the predetermined transmission order. The address input ADa receives LSB (least significant bit) while the address input ADb is supplied with MSB (most significant bit).
The circuit units 12a-12d are reset, by a system reset signal SRST, at the beginning of the operation of the system including the multiplexor 10 and, subsequently, receive respectively four parallel data PDT1-PDT4. The units 12a-12d are arranged to convert the parallel data PDT1-PDT 4 into corresponding serial data SD1-SD4 and then transmits them in the predetermined order as an output Sout over a transmission line 14. Each of the parallel data PDT1-PDT4 includes 16 bits in this case.
A pulldown resistor 16 is provided between ground and each of the serial data outputs SO. Accordingly, each of the units 12a-12d acquires ground level potential in the case where there is no output from each of the units 12a-12d.
FIG. 2 is a block diagram which shows the arrangement of the circuit unit 12a in detail. It should be noted that each of the units 12b-12d is configured in exactly the same manner as the unit 12a. The FIG. 2 arrangement includes, a transmission pause detector 18, a transmission order determiner 20, a control signal generator 22, a shift register 24, a cyclic redundance code (CRC) bits adder 26, a manchester encoder 28, a wave shaper 30, and a driver 32, all of which are coupled as illustrated.
FIG. 3 is a block diagram showing the transmission order determiner 20 of FIG. 2 in detail. As shown, the determiner 20 includes a 2-bit pre-loadable up-counter 32, two inverters 34 and 36, and an AND gate 38. Each of the counterparts of the units 12b-12d is configured in exactly the same manner as shown in FIG. 3.
FIG. 4 is a chart showing a code format of each of the serial data SD1-SD4 to be multiplexed. As shown, the code format of FIG. 4 includes 25 bits in total and begins with start bits (3-bit) which are followed by address ID bits (2-bit), data bits (16-bit), CRC bits (2-bit) and a stop bit. The 3rd to 25th bits of the code format are manchester encoded.
The operations of the FIG. 1 arrangement will be discussed with reference to FIGS. 2-4 and a timing chart shown in FIG. 5.
When the system reset signal SRST goes high at time point TO, each of the units 12a-12d acquires the corresponding address bits at the corresponding 2-bit un-counter (viz., preloading the initial counter content). The two inverters (34, 36 in the case of the unit 12a) are provided prior to the data inputs DATAa and DATAb of the counter (32 in the case of unit 12a). Accordingly, the up-counters of the units 12a-12d are initially set as shown below:
Up-counter 32 of the unit 12a : 11 PA0 Up-counter (not shown) of the unit 12b: 10 PA0 Up-counter (not shown) of the unit 12c: 01 PA0 Up-counter (not shown) of the unit 12d: 00
Thus, an address ID (Identification) signal ADID, which is the output of the AND gate 38 of the unit 12a, assumes a high level (viz., logic 1) at time point TO when the system reset signal SRST goes hig. (It should be noted that time delays of signal propagation via elements are ignored for the purposes of simplifying the time charts of the instant disclosure.) It is understood that each of the AND gates of the units 12b-12d, which correspond to and the AND gate 38 of FIG. 3, continues to issue a low level (viz., logic 0) at time point TO.
In FIG. 2, the ADID is applied to the control signal generator 22 which in turn issues the start bits and then the stop bit over a line 40. The shift register 24 receives the start bits, the address ID bits (00), data bits, and the stop bit in this order. The output of the shift register 24 is applied to the CRC bits adder 26 which inserts the CRC bits between the data bits and the stop bit in response to a control signal applied from the control signal generator 22 over a line 42. The CRS bits are known in the art and further are not directly concerned with the present invention, and hence the description thereof will be omitted.
The encoder 28 is arranged to manchester encode part of the output of the CRC bits adder 26 (viz., the 3rd to 25th bits) in response to a control signal applied from the control signal generator 22 over a line 44. Subsequently, the output of the manchester encoder 28 undergoes wave shaping at the wave shaper 30 and then is applied to the serial data output SO via the driver 32. At this time, the driver 32 has been rendered active by a control signal from the control signal generator 22 via a line 46.
The serial data SD1 appears at the output SO of the unit 12a between time points T1-T2 as shown in FIG. 5. In the event that the serial data SD1 terminates at time point T2, the potential at the output terminal SO falls down to ground via the pulldown resistor 16. When the transmission pause detector 18 detects that the ground potential at the output terminal SO continues for a predetermine time duration, the detector 18 applies, at time point T3, a transmission pause detection pulse Z (Z1) to the counter 32 of the transmission order determiner 20. The pause detection pulse Z (Z1) is used to count up the contents (00 in this instance) by one binary number (viz., counts up to 01). Accordingly, the signal ADID of the unit 12a assumes a low level (viz., logic 0).
Similarly, each of the transmission pause detectors (not shown) of the units 12b-12d detects the transmission pause (interruption) and generates the pause detection pulses Z1 at time point T3. In this instance, only the unit 12b generates the serial data between time points T4-T5.
Subsequently, the units 12c, 12d generate the serial data SD3, SD4 in response to transmission pause pulses Z2 and Z3, respectively. After one cycle of the serial data generations of the units 12a-12d is completed, the units 12a-12d generate the serial data SD1-SD4 during the next cycle in response to transmission pause detection pulses Z4, Z5, Z6, . . . at time points T12, T15, T18, . . . respectively.
As mentioned above, once the system reset signal SRST goes high, the units 12a-12d successively generate the serial data thereof according to the predetermined order in response to the occurrences of the transmission pause pulses Z1, Z2, Z3, . . . In other words, when the system including the multiplexor 10 initiates the operations thereof, the system reset signal SRST continues to hold a logic 1 until the system is de-energized. Therefore, the above mentioned prior art has encountered the problem which will be discussed with reference to a timing chart shown in FIG. 6.
It is difficult that threshold levels of the units 12a-12d for detecting the system reset signal SRST are not fixed to the same level. Therefore, if the unit 12a detects that the system reset signal SRST falls down and then goes high at time points T8' and T9 due to external noises, then the predetermined transmission order of the unit 12a is disturbed. This means that the serial data collision is invited during time points T10-T11 and continues in the following cycles. The prior art is unable to correct these problems until the overall system is awkwardly initialized. This means that a long time passes until restoring the overall system to the correct operations.

Method and arrangement of multiplexing serial data using wired-OR


A gas inlet manifold for a plasma chamber having a perforated gas distribution plate suspended by a side wall comprising one or more sheets. The sheets preferably provide flexibility to alleviate stress in the gas distribution plate due to thermal expansion and contraction. In another aspect, the side wall provides thermal isolation between the gas distribution plate and other components of the chamber.

Electronic devices, such as flat panel displays and integrated circuits, commonly are fabricated by a series of process steps in which layers are deposited on a substrate and the deposited material is etched into desired patterns. The process steps commonly include plasma enhanced chemical vapor deposition (CVD) processes and plasma etch processes.
Plasma processes require supplying a process gas mixture to a vacuum chamber called a plasma chamber, and then applying electrical or electromagnetic power to excite the process gas to a plasma state. The plasma decomposes the gas mixture into ion species that perform the desired deposition or etch process.
In capacitively excited CVD chambers, the plasma is excited by RF power applied between an anode electrode and a cathode electrode. Generally the substrate is mounted on a pedestal or susceptor that functions as the cathode electrode, and the anode electrode is mounted a short distance from, and parallel to, the substrate. Commonly the anode electrode also functions as a gas distribution plate for supplying the process gas mixture into the chamber. The anode electrode is perforated with hundreds or thousands of orifices through which the process gas mixture flows into the gap between the anode and cathode. The orifices are spaced across the surface of the gas distribution plate so as to maximize the spatial uniformity of the process gas mixture adjacent the substrate. Such a gas distribution plate, also called a diffuser or "shower head", is described in commonly assigned U.S. Pat. No. 4,854,263 issued Aug. 8, 1989 to Chang et al.
Perforated gas distribution plates typically are rigidly mounted to the lid or upper wall of the plasma chamber. Rigid mounting has the disadvantage of not accommodating thermal expansion of the perforated plate as it acquires heat from the plasma. The consequent mechanical stresses on the plate can distort or crack the plate. Alleviating mechanical stress is most important with the larger distribution plates required to process larger workpieces, such as large flat panel displays. Therefore, a need exists for a gas distribution device that minimizes such thermally induced mechanical stresses.
Another shortcoming of conventional diffusers or gas distribution plates is that they commonly operate at temperatures that are undesirably low and spatially non-uniform. Specifically, while the diffuser receives heat from the plasma in the chamber, a conventional diffuser generally loses heat at its perimeter where it is bolted to the chamber wall or lid. Therefore, the perimeter of the diffuser is significantly cooler than the center, which tends to produce a corresponding undesirable spatial non-uniformity in the surface temperature of the substrate positioned near the diffuser. Furthermore, the heat loss from the diffuser to the chamber wall undesirably reduces the temperature of the diffuser, which can undesirably reduce the substrate temperature.

Suspended gas distribution manifold for plasma chamber


A conductive main block is formed with a through hole in which a dielectric member of a coaxial connector is inserted. A shell GND of the coaxial connector is secured on a surface of the main block. The core conductor peeled from the dielectric member is projected from an opposite surface of the main block. A conductive GND block includes a board receiving portion on which an end of the board is placed. The GND block can move relatively to the main block, by a guide member, in a linear direction parallel to the surface from which the core conductor is projected. By the relative movement of the main block and the GND block, the core conductor and the board receiving portion are caused to approach or be separated from each other so that the board can be inserted and sandwiched therebetween.

The invention relates to a relay connector for board inspection and others for electrically connecting a core conductor of a coaxial connector to a terminal electrode formed on the front surface of a board and also electrically connecting a shell GND of the coaxial connector to a GND electrode formed on the back surface of the board.
In design/manufacture of a high frequency circuit board, on the way of designing, characteristic evaluation must be done. In this case, by electrically connecting a core conductor of a coaxial connector to a terminal electrode formed at the end on the front surface of a board and also electrically connecting a shell GND of the coaxial connector to a GND electrode formed at the end on the back surface of the board, the characteristic evaluation is done on the basis of the high frequency signal produced from the terminal electrode. Referring to FIGS. 25 and 26, a brief explanation will be given of a related art structure of electrically connecting a coaxial connector to a board. FIG. 25 is a view showing a related art structure of electrically connecting the coaxial connector to the board. FIG. 26 is an exploded perspective view of a related art structure before the coaxial connector is connected to the board. In FIGS. 25 and 26, by soldering, core conductors 14a of coaxial connectors 14 (for example, SMA type connectors) are electrically connected to terminal electrodes 12 formed at the end of the front surface of a board 10, whereas by soldering, shell GNDs 14b of the coaxial connectors 14 are electrically connected to the GND electrode 16 formed at the end of the back surface of the board 10.
In the related art structure shown in FIGS. 25 and 26, the soldering operation when electrically connecting the coaxial connectors 14 to the board 10 is complicated. The operation of melting the solder when removing the coaxial connectors 14 is also complicated. In addition, in the soldering and solder-melting, heat may be conducted to the dielectric member of resin which is a component of the coaxial connector, which results in a fear of deformation and electrically characteristic change in the dielectric member. This limits the number of times of repetitive use, and so is not economical.
In order to obviate such an inconvenience, the related art for electrically connecting the coaxial connector to the board is disclosed in U.S. Pat. No. 5,017,865. This art is, in brief, to fix the shell GND of the coaxial connector to a block of a conductive material, make the core conductor of the coaxial connector project from the one surface of the block in an electrically insulated state, and provide a moving member formed of the conductive material movable along the one surface of the block. With the board being loaded on the moving member, the moving member is moved toward the core conductor so that the terminal electrode formed at the end of the surface of the board is brought into contact with the core conductor, thereby making an electric connection therebetween. Further, since the GND electrode formed at the end of the back surface of the board is loaded on the moving member, it is electrically connected to the shell GND through the moving member and the block. Thus, the coaxial connector can be electrically connected to the board without the soldering.
In the related art disclosed in U.S. Pat. No. 5,017,865, the structure for moving the moving member with the board being load toward the core conductor of the coaxial connector is complicated and so the entire device is fairly bulky. It is preferable that the device is smaller in size and can provide easier attachment/detachment of the coaxial connector for the board.


Systems and methods for performing chamber matching are described. One of the methods for performing chamber matching includes executing a first test within a first plasma chamber to measure a variable and executing a second test within a second plasma chamber to measure the variable. The first and second tests are executed based on one recipe. The method further includes determining a first relationship between the variable measured with the first test and power provided during the first test, determining a second relationship between the variable measured with the second test and power provided during the second test, and identifying power adjustment to apply to the second plasma chamber during a subsequent processing operation based on the first and second relationships. The power adjustment causes the second plasma chamber to perform the processing operation in a processing condition determined using the first plasma chamber.

Plasma chambers are used for a variety of purposes. For example, plasma is generated within a plasma chamber to etch a substrate, clean a substrate, deposit layers on the substrate, or perform other processes on the substrate.
Various chambers are used to process the substrate. Also, the same chamber is used to process the substrate. When different chambers are used, the substrate may not be processed in a substantially uniform manner. For example, a substrate etched using one plasma chamber may be etched at a different rate than another substrate that is etched using another plasma chamber. As another example, a substantially higher amount of material may be deposited on a substrate processed in a plasma chamber than that deposited on the substrate in another plasma chamber.
It is in this context that embodiments described in the present disclosure arise.


An apparatus for heating plastics-material performs includes a conveying device which conveys the plastics-material performs along a pre-determined conveying path. A heating device is arranged along this conveying path and which heats the plastics-material performs. The apparatus has at least one first contacting element arranged downstream with respect to the heating device for acting upon a wall of the plastic-material perform with a temperature profile varying in a peripheral direction and/or longitudinal direction of the plastics-material perform. The contacting element touches with a contact face a pre-determined region— bounded in the peripheral direction and/or longitudinal direction of the plastics-material performs— of a wall of the plastics-material perform in order to act upon this region with a temperature profile different from regions not touched by the contacting element. In addition, the apparatus has an advancing device which advances the contacting element to the plastics-material perform in a pre-determined direction.

The present invention relates to an apparatus for the treatment and, in particular, the tempering and heating of plastics-material preforms. It is known from the prior art to produce plastics-material containers from so-called preforms in two-stage stretch blow-moulding processes. During this processing these preforms are heated to a defined process temperature in order to permit the shaping procedure during the stretch blow-moulding. In this case the heating is usually carried out by means of infrared radiation. These preforms have an orifice already formed to the final size and a body area still to be deformed.
The material to be processed (PET) is wherein strain hardening results during the stretching. The shaping temperature is very important during this. Use is made of this effect in the production of PET containers in order to optimise the distribution of the wall thickness of the container. In this case, in accordance with the prior art a temperature profile is applied to the preform in particular by way of infrared radiation (or even other radiation sources). The hotter region of the preform is deformed first, until the stretching resistance resulting from the strain hardening is greater than the resistance of the adjacent colder region. The temperature profile described is usually uniform around the periphery and varies in the longitudinal direction of the preform in a manner dependent upon the process. During the production of oval containers, however, not only is use made of this effect with a temperature layering in the longitudinal direction, but it is also adapted to the design of the container by differing temperature layering around the periphery. This process is also known as preferential heating. In this case the sides to be stretched to a greater degree should be heated by a special heating technique to a greater degree than the sides to be stretched to a lesser degree. These heating techniques mentioned are described in numerous documents and in part are also protected.
A process for the precise temperature adjustment of re-heated performs is known from U.S. Pat. No. 3,892,830. Here those sides of the perform which are to be expanded along a main axis are touched with textured fingers in order to lower the temperature. U.S. Pat. No. 632,713 describes a process for blow-moulding whilst using an elongate oval plug. An apparatus for blow-moulding containers is known from U.S. Pat. No. 5,869,110. This apparatus has a heating device for heating a perform as well as a shaping unit in order to shape the perform. In addition, an intermediate region is provided which has a temperature-adjusting device in order to adapt the temperature of at least part of a surface of the perform.
DE 695 18 223 T3 likewise describes an apparatus for heating preforms. Here a temperature-setting member is mentioned which has cool members which are arranged along the axial direction of the preform and which are brought into contact with the container whilst using cylinders or the like. Only light contact is achieved here which does not, however, deform the container. EP 0 920 974 A2 describes an apparatus for blow-moulding non-round containers starting from a rotationally symmetrical preform. This apparatus has a rotation device in order to turn the preforms about their own axis, and a sensor which determines an angular position of each preform in a heating station.
A blow-moulding machine for containers, which contains an apparatus for orientating the preforms in a tool, is known from DE 600 04 894 T2. EP 1 279 477 A1 describes an apparatus and a process for blow-moulding a bottle. In this case, too, the preforms are positioned inside a blow mould between a heating step and a blowing step, wherein a sensor detects profiled positions of each preform, so that these regions are arranged in a pre-set orientation relative to the blow mould.
U.S. Pat. No. 5,101,990 describes a process for blow-moulding containers with oval cross-sections for example. Here ribs directed radially inwards are formed in the containers. In a process known from U.S. Pat. No. 4,151,249 for producing plastics-material containers, inwardly curved ribs are formed. These ribs are produced by contact-free cooling by air in individual regions of the preforms.
The object of the present invention is therefore to make available a new concept for providing the performs with a temperature profile varying in the peripheral direction.

Apparatus and process for tempering plastics-material preforms


Etch assisting agents for focused ion beam (FIB) etching of copper for circuit editing of integrated circuits both prevent loss of adjacent dielectric due to sputtering by the ion beam, and render sputtered re-deposited copper on adjacent surfaces non-conductive to avoid electrical short circuits. The agents are characterized by having an N—N (N being Nitrogen) bonding in their molecules and boiling points between about 70° C. and about 220° C., and include hydrazine and water solutions, hydrazine derivatives, NitrosAmine derivatives saturated with two hydrocarbon groups selected from Methyl, Ethyl, Propyl and Butyl, NitrosAmine related compounds, and Nitrogen Tetroxide. Preferred agents are Hydrazine monohydrate (HMH), HydroxyEthylHydrazine (HEH), CEH, BocMH, BocMEH, NDMA, NDEA, NMEA, NMPA, NEPA, NDPA, NMBA, NEBA, NPYR, NPIP, NMOR and Carmustine, alone or in combination with Nitrogen Tetroxide. The agents are effective for etching copper in high aspect ratio (deep) holes.

Copper (Cu) is the primary material used in integrated circuits (ICs) to create electrically conductive interconnects, and the etching of copper in ICs using focused ion beam (FIB) techniques is important in the field of circuit editing (CE) for failure verification and debugging of the ICs. Circuit editing of ICs with a focused-ion-beam (FIB) system requires that copper planes and traces be milled (cut) uniformly and cleanly so as to electrically isolate circuit elements across the separation created.
Achieving clean uniform FIB etching of copper for CE is difficult. In spite of significant past efforts to improve the quality of FIB copper etching processes, problems persist and improvements are needed in two main areas. These two areas are reducing electrically conductive re-deposited copper in the FIB etching area, and improving the etching selectivity and removal of copper while protecting the adjacent and underlying dielectric from unwanted etching and removal. Both of these problems arise from the properties of copper.
In contrast to aluminum (Al) that may be removed quickly and cleanly in a FIB operation using an agent such as iodine or an iodine-containing etchant, copper does not create simple volatile compounds with iodine or any other elements as does aluminum (e.g., AlI3) that can survive under ion bombardment and are easily removed. Rather, copper etching in a FIB process is due substantially exclusively to ion beam sputtering. This can inevitably lead to the unwanted re-deposition of conductive copper which causes problems as discussed below.
In addition, copper has a crystalline structure comprising crystal grains which have different crystallographic orientations. Grains with different orientations exhibit significantly different FIB etching rates and, therefore, FIB etching of copper is very non-uniform and uneven. It results in a very rough surface on the etched copper, and may perforate the copper layer down to the underlying dielectric. This may lead to significant damage of the underlying dielectric, and may result in electrical short circuiting of IC circuits from re-deposited electrically conductive copper. Past efforts to improving selectivity have focused principally on protecting the dielectric rather than enhancing the removal of copper, because the required selectivity that is achievable for copper etching is low relative to other materials, e.g., aluminum, where volatile etching byproducts are created.
Further, the ion beam sputtering process causes copper re-deposition all about the area exposed by the ion beam. This creates significant problems since the milled copper material that is intended to be removed re-deposits in this area, making electrical isolation of a signal difficult or impossible. In addition to affording protection of the adjacent and underlying dielectric against unwanted damage or removal, copper etch-assisting chemical agents must also actively assist in either limiting re-deposition of conductive copper material or converting re-deposited conductive copper to a non-conductive state to prevent unwanted electrical short circuits and ensure disconnection of copper conductors intended to be disconnected. FIG. 1 shows two comparative examples of FIB operations to cut copper lines using straight sputtering by an ion beam without any etch assisting agent (top trace A), and ion beam sputtering in an atmosphere of NH4OH comprising a mixture of oxidizing vapors of ammonia (NH3) and water (H2O) (bottom trace B). In the figures, copper appears as the bright areas. The different shades of brightness (gray to white) in the copper lines represent areas of different grain orientations that were etched differently.
In the top example A of FIG. 1, the re-deposited conductive copper is clearly seen as the thin bright lines 10, 11 on opposite sides of the severed copper line 12, demonstrating that electrical disconnection was not complete, i.e. there was no voltage difference between disconnected ends of the copper line. On the other hand, as shown in the bottom example B in the figure, the copper line 14 was successfully cut and the two ends of the line were disconnected electrically. The re-deposited conductive copper was oxidized by the vapors of NH3 and H2O, rendering it nonconductive and a voltage potential difference was present between the disconnected ends of the copper line. This example shows the advantages of using chemical oxidizers, such as electro-negative chemical elements like oxygen and nitrogen, as FIB etching agents for copper.
However, not all oxidizing agents will work with copper. For example, halogens should not be used as etch-assisting agents. Halogens, with the exception of fluorine, spontaneously react with and corrode copper without any activation by an ion beam, and they seriously degrade the conductivity of the copper. Even if halogen agents such as chlorine, bromine and iodine are carefully controlled, they can remain in the FIB vacuum chamber for a long time and continue to corrode any exposed copper. Furthermore, all halogens (including fluorine) are very aggressive to both high-k and low-k dielectrics.
When etching copper, there should be reasonably small and controlled over-etching of the dielectric so that performing CE on one metallization layer does not break through to an adjacent or underlying layer and create electrical leakage. Moreover, if cutting a copper line on a plane is not the last operation in the CE process, steps should be taken to ensure that the dielectric floor is flat after copper removal. Otherwise, subsequent operations can be seriously affected. As noted previously, because of its crystalline structure, the sputtering rate of copper is highly dependent on its grain orientation, and the average etching rate can vary significantly, as by a factor of four or more for a given set of FIB operating parameters. This is illustrated in FIG. 2 that shows the results of straight sputtering of copper 20 without any etch assisting chemistry applied, and clearly demonstrates the very uneven sputtering of copper due to its crystallographic structure. The dimensions of the milled area in the figure are approximately 10 μm×10 μm. As shown, the underlying dielectric is heavily damaged in areas where the copper removal was the greatest, while in other areas significant amounts of copper remain to be removed. From this figure, the difficulties in controlling the etching of copper may be readily appreciated.
Since copper removal is due to ion beam sputtering (not volatilization), copper removal occurs relatively slowly. This means that it is necessary to expose the copper to the ion beam for a longer period of time, and because of the unevenness of copper removal the ion beam may inadvertently damage some spots of the underlying dielectric. Thus, any copper etch assisting agent must provide protection of the adjacent or underlying dielectric to prevent unwanted etching of the dielectric. Once an area of dielectric is exposed, the etch assisting agent should either halt or significantly slow down the dielectric sputtering.
For conventional dielectrics, such as silicon dioxide, SiO2, it has been found that oxygen, water or a mixture of vapors of water and ammonia can slow down dielectric sputtering by up to a factor of ten if the ion beam current density and vapor pressure are adjusted properly. Water and ammonia are good oxidizers and have been found to afford reasonably good protection for conventional dielectrics, and oxygen, water and a mixture of water and ammonia have been used as copper etch assisting chemicals for etching copper over conventional SiO2 dielectric. However, these compounds have been found to be useless for protecting the new low-k dielectrics being increasingly used in ICs. The main problem is that many low-k dielectrics contain carbon as one of the main components of the dielectric structure, which is why low-k dielectrics are sometimes called "organic" dielectrics. Both water and oxygen easily oxidize carbon in the dielectric structure to produce carbon monoxide (CO) or carbon dioxide (CO2), both of which are gases and are volatilized. Therefore, rather than being protective agents for the dielectric, they accelerate dielectric etching by volatilizing one of the main components of the dielectric structure.
There has been and is an increasing tendency in the IC industry to employ dielectrics with even lower k numbers by increasing of the proportion of carbon in their structures. This has led to a demand for new copper etch assisting chemistries that are capable of protecting the dielectric. U.S. Pat. No. 7,060,196 discloses and claims a number of chemicals, mainly nitro-compounds such as Nitro-methane, Nitro-ethane, Nitro-propane, Nitro-ethanol and others, for use as etch assisting agents to protect dielectrics in FIB copper etching applications. Nitro-ethanol presently is one of the most widely used chemical agents for etching copper over organic dielectrics in FIB operations. While Nitro-ethanol has been effective in limiting dielectric etching, it has not been very effective addressing the problem of re-deposition of sputtered conductive copper material on surfaces adjacent to the IC work area. This is shown in FIG. 3.
FIG. 3 illustrates the results of etching copper over Black Diamond™ dielectric using Nitro-ethanol as an etch assisting agent. As shown, the center of the milled area has a flat bottom with two rows of contacts 30 comprising vias connected to the next lower layer. However, re-deposited copper is clearly present on the vertical walls of the openings, as indicated at 32. Re-deposited conductive copper material appears as bright areas in the figure as it produces secondary electron emission. The re-deposited material is conductive because it contains copper and some carbon from the copper etch assisting compound (Nitro-ethanol in this case). This re-deposited material may render the IC partially or totally inoperative by electrically short circuiting interconnects or grounding copper power planes. For example, if in the figure the upper milled area 34 were not wider than the lower milled area 36, the top and bottom power planes would be electrically shorted to each other by the re-deposited conductive copper on the vertical walls of the openings. There is also more re-deposited conductive copper material in the milled areas which is invisible in the figure because it is not grounded and does not produce secondary electron emission. From the figure, it can be concluded that while the Nitro-ethanol copper etch assisting compound functions well to protect the underlying dielectric, it is not effective in addressing conductive copper re-deposition.
Thus, there is a need for etching methods and etch assisting agents for FIB etching of copper that addresses the foregoing and other problems with known methods and etch assisting agents. In particular, there is a need for etching methods and etch assisting agents for FIB etching of copper that both protect the adjacent and underlying dielectric from unwanted etching, and that avoid the problems caused by re-deposition of conductive copper and other materials. It is to these ends that the present invention is directed.

FIB process for selective and clean etching of copper


An abutment module, more especially for automatic processing and conveying equipment, comprises an abutment member arranged on a base for objects moving in a current working direction of movement in a plane of motion, such abutment member being able, by means of a fluid power operated servo member, to be shifted out of and back into such plane of motion, at least one position sensor being provided by which at least the abutment position of such object striking the abutment member may be detected, and a bus station for a bus system to detect and process position sensor signals of the at least one position sensor is integrated in the abutment module, and at least one control valve is integrated in the abutment module, such control valve being able to be controlled electrically by way of the bus system and serving for control of the servo member.

The invention relates to an abutment module, more especially for automatic processing and conveying equipment, comprising an abutment member arranged on a base for objects moving in a current working direction of movement in a plane of motion, such abutment member being able, by means of a fluid power operated servo member, to be shifted out of and back into such plane of motion, at least one position sensor being provided by which at least the abutment position of such object striking the abutment member may be detected.


A chassis unit for electrical equipment is made up of a main chassis and a sub-chassis so that a part such as a power transformer, which produces vibration, is mounted on the sub-chassis and parts such as a printed circuit board and the circuit elements disposed on it, which produce no vibration, are mounted on the main chassis. The main chassis has an opening through which, when the main chassis is combined with the sub-chassis in such a manner that the two chassis are substantially flush with each other, the part mounted on the sub-chassis is protruded above the main chassis, such that the main chassis is separated from the sub-chassis in the propagation of the vibration.

This invention relates to chassis units for electrical equipment, and more particularly to chassis units for audio visual devices.
It is well known in the art that in electrical equipment and, more specifically, in the amplifier of an audio visual device, a power transformer, chemical capacitors, etc. are mounted on a chassis, and the picture quality and tone quality depend greatly on the performance of the power transformer.
The power transformer is vibrated, when energized. The vibration is transmitted to the printed circuit board forming an electronic circuit, and to electronic circuit elements installed on the printed circuit board, thus adversely affecting the output signal. In order to eliminate this difficulty, an improvement has been proposed in the art so as to prevent the transmission of the vibration of the power transformer to the printed circuit board.
It is true that the transmission of the vibration of the power transformer to the electronic elements is decreased to some extent by the improvement. However, since the power transformer and the electronic elements are mounted on the same chassis, the vibration of the power transformer is still transmitted to the circuit elements, as a result of which the input and output signals are distorted, for instance, by intermodulation; that is, the tone quality and the picture quality are lowered.


The present disclosure provides a semiconductor device. The semiconductor device includes a transistor. The transistor includes a first source/drain (S/D) region, a second S/D region and a gate structure. The first S/D region is defined in a first well on a double diffusion layer, wherein the first well and the double diffusion layer define a diode at a junction therebetween, wherein an anode of the diode and the first S/D region form an open circuit therebetween. The gate structure is between the first S/D region and the second S/D region.

A MOS transistor that includes a trench gate structure offers important advantages over a planar transistor for high current, low voltage switching applications.
This Discussion of the Background section is for background information only. The statements in this Discussion of the Background are not an admission that the subject matter disclosed in this section constitutes a prior art to the present disclosure, and no part of this section may be used as an admission that any part of this application, including this Discussion of the Background section, constitutes prior art to the present disclosure.

Semiconductor device and charging system using the same


A yarn winding machine is equipped with transducer means (39) disposed in the area of the ends (33, 35) of the contact roll shaft (37) to monitor the pressing force of the contact roll (11) against the yarn package (9) being wound. The short paths between the sensors and the areas where the contact roll presses against the surface of the yarn path makes it possible to measure the downward pressure at the individual measurement points or as a whole. The signals can be used to control the pressing force and also to maintain the parallelism of the axes (A, B) of the spool mandrel (5) and of the contact roll (11).

Winding machines of the type used to build up large packages of synthetic filament yarns typically employ overhung or cantilever mandrels about which the yarns are wound as the mandrels rotate about their axes. Such machines will be referred to here at times as spooling frames and the yarn packages as spools. The cantilever or overhung type mounting for such a mandrel leaves on end of the mandrel free and accessible for the endwise insertion thereover of empty fiber (e.g. paper) tubes onto which the yarn may be wound and for the endwise removal therefrom of the full yarn packages formed as a result of the winding of the yarn onto the fiber tubes.
A contact roll ordinarily is disposed above the operative position of the mandrel on which the yarn packages are wound. Its mounting arrangement is such that it may move vertically as necessary in view of the changing diameter of the yarn packages as these are being built up. Means also are provided to press the contact roll downwardly to provide the desired contact with the peripheries of the yarn packages.
In some machines the contact roll is the driving roll for rotating the mandrel through friction with the yarn package on the mandrel. In other machines the contact roll is a speedometer roll which frictionally contacts the outer surface of the building yarn package to sense the peripheral speed thereof and provide an input signal for a drive for the mandrel. In all of these cases, however, it is desirable that the contact roll press with reasonable uniformity against substantially the entire length of all the yarn packages being wound on a mandrel at a given time
If only a single short spool or yarn package is built up on the spool mandrel, the pressing force can be kept within the desired limits by well-known means. Here, the small differences in parallelism between the mandrel and the contact roll which arise as the yarn package builds up do not greatly affect the quality of the package. However, problems may arise in larger capacity operations and/or in machine structures wherein the contact rolls are loaded unevenly.
U.S. Pat. No. 4,106,710 proposes that a fork-shaped mount of a driving roll for contacting and rotating a yarn package should be supported on two diaphragm cylinders charged with compressed air, and that the desired pressure should be applied to the roll. These diaphragm cylinders have a complicated design, and they are pressed together as the diameter of the spool increases. This continuously raises the pressing pressure of the driving roll, until the mounting of the diaphragm cylinder is conducted radially away from the spool by means of a path sensor.
This known apparatus has the disadvantage that the pressing pressure of the contact roll is sensed only indirectly through the feed pressure of the diaphragm cylinders.

Apparatus for monitoring the pressing force of a contact roll in a textile yarn winder


A method of controlling the data rate of a data transmission between an emitter and a receiver, wherein data rate adaptation control commands may be sent using a return path from the receiver to the emitter, which comprises monitoring at least one receiving condition at the receiver; determining at least one threshold on said receiving conditions to trigger data rate adaptation control commands; estimating the transmission time of the data rate adaptation control commands from the receiver to the emitter and adjusting the threshold on these receiving conditions to trigger data rate adaptation control commands based on said estimation of the transmission time from the receiver to the emitter.

The present invention concerns a method and a device for data rate adaptation between an emitter and a receiver and more particularly such a method operable for a low buffering and low latency communication system.
The context of the invention concerns high data rates, typically over gigabits per second requiring a very low latency, typically sub micro-second latency. In this context, a traditional data rate adaptation control mechanism based on monitoring the receiver input buffer is sensitive to the variation of latency of the control feedback channel. In order to maintain the data rates performances, a large receiver input buffer is required to compensate for the maximum round-trip delay of the communication. Such a large receiver input buffer introduces an additional latency equivalent to the round-trip delay. Using this method, the overall latency is double.
It is desirable to reduce the feedback channel jitter transporting data rate adaptation control in order to obtain a communication latency equivalent to the one without data rate adaptation. It is desirable to use the return path for the feedback path, in order to allow full duplex communication. It is also desirable to keep the required bandwidth as low as possible in order to allow very high data rates on the return path.

Method and apparatus for controlling the data rate of a data transmission between an emitter and a receiver

Abstract: Accordingly, by continuously adjusting at least one said triggering threshold according to the variation of the transmission time of said data rate adaption commands, a more efficient data rate adaptation method is obtained minimizing the adaptation needs.


Embodiments of the present application provide a communication method, a terminal device and a network device. The method includes: starting, by a terminal device, a preconfigured timer; and monitoring, by the terminal device, resource preemption indication information transmitted by a network device in a preconfigured target frequency monitoring area within a duration of the timer, where the resource preemption indication information is used to indicate a resource that is preempted by other traffic in an evolved mobile broadband traffic (eMBB) resource, the eMBB resource is a time-frequency resource used to schedule eMBB traffic, the other traffic is different from the eMBB traffic. The embodiments of the present application can inform a terminal device of a preempted eMBB resource flexibly within a duration of a timer by using the resource preemption indication information.

With the development of mobile communication technologies, in the fifth generation (5G) mobile communication systems, in order to improve efficiencies of resource utilization, some traffic that requires low latency communication, for example, an ultra-reliable low latency communication (URLLC) traffic can preempt a resource originally allocated to enhanced mobile broad band (eMBB) traffic for data transmission. Therefore, how to indicate that the resource originally allocated to the eMBB traffic is preempted by other traffic so as to reduce the impact on the eMBB traffic is a problem that needs to be studied.

Communication method, terminal device, and network device

GUANGDONG OPPO MOBILE TELECOMMUNICATIONS CORP., LTD.