A medication dispensing apparatus that provides a mechanical advantage. During dose preparing, a nut rotating element (410) and a screw element (368) are in a first axial arrangement such that a screwing motion of the nut rotating element and screw element relative to the apparatus housing that moves the elements a first axial distance from a home position screws a nut (364) along a drive member threaded shaft (362) a second axial distance different than the first axial distance. During dose dispensing, the nut rotating element and the screw element are in a second axial arrangement, whereby a screwing motion of the screw element relative to the housing back toward the home position advances a plunger (366) in the distal direction to axially advance the nut and thereby the drive member and a fluid container piston to dispense medicine.

The present invention pertains to medication dispensing devices, and, in particular, to a portable medication dispensing device such as an injector pen.
Patients suffering from a number of different diseases frequently must inject themselves with medication. To allow a person to conveniently and accurately self-administer medicine, a variety of devices broadly known as injector pens or injection pens have been developed. Generally, these pens are equipped with a cartridge including a piston and containing a multi-dose quantity of liquid medication. A drive member, extending from within a base of the injector pen and operably connected with typically more rearward mechanisms of the pen that control drive member motion, is movable forward to advance the piston in the cartridge in such a manner to dispense the contained medication from an outlet at the opposite cartridge end, typically through a needle that penetrates a stopper at that opposite end. In disposable or prefilled pens, after a pen has been utilized to exhaust the supply of medication within the cartridge, a user, who then begins using a new replacement pen, discards the entire pen. In reusable pens, after a pen has been utilized to exhaust the supply of medication within the cartridge, the pen is disassembled to allow replacement of the spent cartridge with a fresh cartridge, and then the pen is reassembled for its subsequent use.
A number of known injection pens have utilized a mechanical advantage to facilitate operation. An injection pen disclosed in International Publication Number WO 96/26754 obtains a mechanical advantage with a gear set including first and second coaxial pinions that engage different racks within the pen, and which gear set travels with the pen thrust rod. Another injection pen with a mechanical advantage is disclosed in International Publication Number WO 01/95959, which pen uses one or more gear wheels carried by a connector element threadedly engaged with a piston rod. While these pens may be useful, their ability to provide high mechanical advantage may be limited by, for example, how small the gears can be made. In addition, these pens have relatively complicated designs, as well as potentially costly components, such as separate springs, which may undesirably impact the ability to effectively commercialize the pen in a disposable format.
Some other known injection pens that provide mechanical advantage have complicated designs that may make them relatively expensive to produce. Still another injection pen, such as disclosed in U.S. Pat. No. 5,938,642, is highly effective as a pre-filled device, but does not provide a mechanical advantage during injecting.
Thus, it would be desirable to provide an apparatus that can overcome one or more of these and other shortcomings of the prior art.

Medication dispensing apparatus with triple screw threads for mechanical advantage


In a method of fabricating a semiconductor device, first metal interconnection patterns, first via patterns and second metal interconnection patterns are positioned in such a way that each of antenna ratios of the first metal patterns, the first via patterns and the second metal patterns becomes equal to or smaller than an allowable antenna ratio. Next, a width of each of the first metal patterns is broadened by a minimum line width of the first metal patterns. The broadened first metal patterns are connected at a first area where a distance between the broadened first metal patterns is smaller than a minimum size of the first via patterns. Then, a second area is extracted where the first metal patterns and the second metal patterns do not exist. Additional first via patterns are placed in the second area. Each of the additional first via patterns has a minimum size with a minimum pitch in the second area. Finally, the additional first via pattern which do not meet a minimum allowable distance between the first metal patterns and the first via patterns is deleted.

The present invention relates to a semiconductor device that ensures a reduction in a process-induced damage (hereinafter abbreviated as xe2x80x9cPIDxe2x80x9d) in a multilevel interconnection process.
According to the related art technology in the field, a semiconductor device is designed by the following method.
A logic circuit which satisfies a given operation is laid out with a device isolation pattern, an impurity doping pattern, a gate electrode pattern, a contact hole pattern and a first metal interconnection pattern. The first metal interconnection pattern is so designed that its antenna ratio becomes equal to or smaller than an allowable antenna ratio.
Then, a first via pattern for connecting the first metal interconnections to the second metal interconnections is laid out. The first via pattern is so designed that its antenna ratio becomes equal to or smaller than the allowable antenna ratio.
A second metal interconnection pattern is then laid out. The second metal interconnection pattern is so designed that its antenna ratio becomes equal to or smaller than the allowable antenna ratio.
The semiconductor device is designed by repeating the second stage and third stage until a predetermined number of interconnection levels is reached.
The disclosed method of the related art could not however completely prevent a PID-oriented variation in transistor characteristic or deterioration of the characteristic. The problem is reported in detail in xe2x80x9cImpact of pattern density on plasma damage of CMOS LSIs, K. MIYAMOTO et al., Technical digest of International Electron Devices Meeting, pp. 739-742, 1996xe2x80x9d. The problem will be elaborated hereunder according to the reference document.
The numbers of defective transistors generated on SRAM test chips were examined with respect to Random Logic A, Random Logic B and RAM and came out in the order of Random Logic A greater than Random Logic B greater than RAM. An antenna ratio, a typical PID index, was also studied for each of the three functional elements. The antenna ratios came out in the order of Random Logic A greater than RAM greater than Random Logic B. Apparently, the tendency of the antenna ratio did not match with the tendency of the number of defective transistors. It is to be noted that the antenna ratio is calculated in terms of interconnections and vias and is equal to the interconnection side area divided by the transistor area and the via bottom area divided by the transistor area. The pattern ratios of the functional elements were in the order of RAM greater than Random Logic A greater than Random Logic B. It was concluded from the above that the PID was a function of the antenna ratio and the pattern ratio and the larger the antenna ratio was and the smaller the pattern ratio was, the easier the generation of the PID became.
The influence of the pattern ratio on the PID was also reported in xe2x80x9cQuantifying Via Charging Currents, Wes Lukaszek et al., Proceedings of 2nd International Symposium on Plasma Process-Induced Damage, pp. 123-126, 1997xe2x80x9d. The following is the specific discussion on the influence given in the document.
For vias of size 1.5 xcexcm and different density levels 1/1600 (/xcexcm2) for v1, 1/400 (/xcexcm2) for v4, 1/100 (/xcexcm2) for v16, and 1/25 (/xcexcm2) for v64 the voltage dependency of the current density was examined by a charge-flux sensor. It was confirmed that the current density increased only for the density level of v1 among the four density levels.
As apparent from the two documents, it is necessary to pay attention to both the antenna ratio and the pattern density in order to suppress the PID. Accordingly, it is an object of the invention to provide a method of fabricating a semiconductor device, which can suppress the PID in consideration of the influences of the antenna ratio and the pattern density.
In a method of fabricating a semiconductor device of the present invention, first metal interconnection patterns (M1a), first via patterns (V1a) and second metal interconnection patterns (M2a) are positioned in such a way that each of antenna ratios of the first metal patterns, the first via patterns and the second metal patterns becomes equal to or smaller than an allowable antenna ratio. Next, a width of each of the first metal patterns (M1a) is broadened by a minimum line width of the first metal patterns to form broadened first metal patterns (M1b). The broadened first metal patterns (M1b) are connected at a first area where a distance between the broadened first metal patterns is smaller than a minimum size of the first via patterns (V1a) o form modified first metal patterns (M1c). Then, a second area is extracted where the first metal patterns (M1c) and the second metal patterns (M2a) do not exist. Additional first via patterns are placed in the second area. Each of the additional first via patterns (V1b) has a minimum size with a minimum pitch in the second area. Finally, the additional first via pattern which do not meet a minimum allowable distance between the first metal patterns (M1c) and the first via patterns is deleted to form the finally additional first via patterns (V1c). After all of the above data processes are conducted, the first metal patterns are fixed at M1a and the first via patterns are fixed at V1a+V1c.

Method of fabricating a semiconductor device having a multilevel interconnections


Systems and methods scale an instance group of a computing platform by determining whether to scale up or down the instance group by using historical data from prior jobs wherein the historical data includes one or more of: a data set size used in a prior related job and a code version for a prior related job. The systems and methods also scale the instance group up or down based on the determination. In some examples, systems and methods scale an instance group of a computing platform by determining whether to scale up or down the instance group by at least evaluating on-demand job request data for resource units (RUs), observing current job state data, and predicting resource unit need using historical data from prior related job executions. The systems and methods scale the instance group up or down based on the determination.

Certain embodiments of the present invention are directed to computing platforms including instance groups. More particularly, some embodiments of the present invention provide systems and methods for autoscaling instance groups of computing platforms.
With the number of customers of a computing platform increasing, the demands on resources provided by the computing platform are also increasing. In some examples, customers are running their applications on multiple instances across the computing platform with certain resources allocated to each instance. Each instance, for example, includes a virtual server running on a particular host machine of the computing platform, and offers different compute and memory capabilities and resources. Thousands and thousands of jobs can be starting and stopping in the computing platform at one time. Thus, managing instances and resources across a computing platform becomes increasingly more complex with the number of instances and the amount of resources increasing. For example, conventional computing platforms are generally not very efficient in utilizing resources allocated to particular instances of the computing platform. In another example, conventional computing platforms are not easily stood up multiple times for an increased number of customers. Determining whether to scale up or down the number of instances to efficiently use the computing platform is growing more difficult with growing platform demand.
Hence it is highly desirable to improve the techniques for autoscaling instance groups on computing platforms.

Systems and methods for autoscaling instance groups of computing platforms


An internally, resistively, sensed Darlington amplifier includes a Darlington amplifier, at least an input transistor, an output transistor, a resistive divider, a signal input node, and a signal output node. The Darlington amplifier is responsive to an input signal and configured to generate an output signal. An internal bias setting resistor is coupled between the signal output node, a collector of the output transistor, and the resistive divider. The bias setting resistor is configured to set and regulate the bias current of the Darlington amplifier.

A Darlington amplifier typically includes an input transistor and an output transistor connected in such a way that the current amplified by the input transistor is amplified further by the output transistor. Such a design has a much higher common/emitter current gain than each transistor taken separately. In the case of integrated devices, a Darlington amplifier can take less space than two individual transistors because it employs a shared collector. Integrated Darlington amplifiers may come packaged singly as three terminal style transistor packages, or as an array of devices on an integrated circuit chip.
Without adequate bias control mechanism, the bias current through a Darlington amplifier will be sensitive to process, temperature, and supply voltage variations. This can be problematic because the bias current determines the gain, output power and distortion characteristics of the Darlington amplifier.
One conventional method to set the bias current Darlington amplifier is to use an off-chip bias resistor as part of a negative feedback network. The bias resistor senses bias current and induces a voltage drop across it that is proportional to the current. The voltage drop reduces the voltage across the Darlington amplifier thus regulating the bias current. The larger the voltage drop across the bias resistor, the higher the negative feedback loop gain and more stable the bias current is and less sensitive the Darlington amplifier will be to supply voltage, process, and temperature variations. However, a larger voltage drop across the bias resistor means there may be less voltage applied to the collectors of the input and output transistors. This reduces the voltage available for the output signal voltage swing. The reduced voltage swing headroom for the output signals may affect saturation output power, compression, third order intercept point (IP3) and other distortion characteristics. Alternatively, voltage swing headroom may be restored by using a higher supply voltage, but this may not be practical and/or it may result in undesirably high DC power dissipation.
Another conventional technique used to bias a Darlington amplifier is disclosed in U.S. Pat. No. 6,927,634, incorporated by reference herein. As disclosed therein, an additional active device, e.g., a transistor, QBIAS, in the form of a current mirror is used to sense the current in the output transistor of the Darlington amplifier. As the current in the output device increases, the voltage at its base increases which is transferred to the base of the active transistor QBIAS. The increase in the base voltage of QBIAS produces a proportional increase in current. This increase in current increases the voltage drop across the feedback resistor which reduces the voltage at the base of the input transistor. This reduces the current in the input and output transistors of the Darlington amplifier to effectively control the bias current.
Because the active device as disclosed in the '634 patent is placed in the signal path of the amplifier, it needs to be isolated with inductors and capacitors so that it does not interact with the input and output transistors. The effectiveness of such isolation components is dependent on frequency. The result may be degradation of the noise figure of the Darlington amplifier

Internally, resistively, sensed darlington amplifier


An injector device for the percutaneous injection of fluids, such as medications, is disclosed. The device can have a mobile phone case. The mobile phone case can hold an auto-injector cartridge having a trigger, spring-loaded needle and reservoir holding a medication such as epinephrine or insulin. The device mobile phone case can communicate injection data to the phone. The phone can communicate the injection data to an emergency service provider.

1. Field of the Invention
Devices and methods for injecting medication are disclosed. More particularly, an electronics case with integrated components for auto-injector featuring spring activation and concealed needle 2 is disclosed.
2. Description of the Related Art
Portable injectors are commonly used. Injectors such as epinephrine pens are carried by many people at risk for anaphylactic allergic reactions. If the user experiences the onset of anaphylaxis, they or a third party, can press the injector into an appropriate part of their body, such as an upper arm, thigh, abdomen, or buttocks. The injector then inserts a needle 2, usually due to the force of impact onto the body, and delivers the epinephrine to the user to treat the anaphylaxis. Often, it is useful for the user to seek follow-up treatment.
It can be difficult for one to mentally force himself or herself to self-inject. Accordingly, injectors often have a stiff, resistive cover over the needle 2 so the injector needs to be pressed into the body with a high enough force to expose the needle 2, that the injection happens extremely fast and easier to perform because the force needed to expose the needle 2 will also insert it to its full depth in the tissue instantly. However, if the user is suffered anaphylaxis, it may be difficult to muster the requisite dexterity and strength to inject oneself with a typical manual, portable pen injector.
Further, the dosage in the injector is fixed, but the needed medication for the patient may be more than available. Accordingly, if follow-up treatment is not received in a timely fashion, anaphylaxis can continue resulting in further health complications.
Portable injectors are also easily forgotten since they are often used infrequently. Users may not have them available when in need.
Accordingly, a portable injector with an auto-injection function is desired. Further, a portable injector that can summon follow-up treatment, such as emergency medical personnel is desired. A portable injector that can also be easily remembered and carried with the user is also desired.


A multicolor detection device includes: a condensing lens array 17 in which a plurality of condensing lenses 18, each of which turns light emitted from each of a plurality of light emitting points 1 individually into parallel light beams, are arranged, the light emitting points being arranged in a light emitting point array; at least one spectroscopic element on which the parallel light beams are incident in parallel, the at least one spectroscopic element being common; and at least one sensor on which light beams spectrally separated by the spectroscopic element are incident in parallel, the at least one sensor being common.

A capillary array DNA sequencer which collectively deciphers base sequences of different DNA samples in individual capillaries by performing electrophoretic analysis with in parallel processing using the plurality of capillaries (glass capillary each having an outer diameter of 100 μm to 400 μm and inner diameter of 25 μm to 100 μm) filled with a separation medium is widely used. This mechanism will be described later. A polyimide coating film is formed on an outer surface of a commercial capillary in order to preserve flexibility. A portion where an electrophoretic length of each capillary is constant, for example, a portion near a position of 30 cm distance away from a sample injection end of the capillary is arranged to be aligned on the same plane in a state where the coating film is removed and a laser beam is irradiated from a side of a capillary-array plane so as to simultaneously irradiate the plurality of capillaries with the laser beam. Hereafter, the capillary-array plane may be simply called a array plane in the present specification. A fluorescent labeled DNA, which is subjected to electrophoresis, inside each capillary described above emits fluorescence by being excited by laser irradiation when the DNA is passed across the laser beam. Here, DNA is labeled with fluorescent substances of four colors depending on the terminal base species of A, C, G, and T. As a result, laser-irradiation positions of respective capillaries become light-emitting points and a plurality of light-emitting points are arranged on a straight line at intervals of p. Hereafter, this is called a light-emitting-point array. When the number of the light-emitting points (number of capillaries) is set to n, the entire width W of the light-emitting-point array is W=p*(n−1). For example, when p=0.36 mm and n=24, W=8.28 mm. A fluorescence-detection system collectively detects respective light beams emitted from the light-emitting-point array while spectroscopically separating the light beams. A configuration of the system is illustrated in FIG. 3 of PTL 1.
First, respective emitted light beams are turned into parallel-light beams by a common condensing lens. Hereafter, an expression of "common" is used as the meaning (n-to-1 correspondence) that one optical element is used for a plurality of light-emitting points (n light-emitting points). In contrast, an expression of "individual" is used as the meaning (1-to-1 correspondence) that one optical element is used for one light-emitting point. Here, when a focal length of the common condensing lens is set as f and an effective diameter is set as D1, W<f and W<D1. For example, f=50 mm and D1=36 mm. Next, the parallel-light beams are allowed to be passed through a long pass filter so as to cut a wavelength of the laser beam and further allowed to be transmitted through a common transmission type diffraction grating so as to be subjected to wavelength dispersion in the long axis direction of each capillary, that is, the direction orthogonal to both the array direction of the light-emitting-point array and the optical axis of the common condensing lens. Here, when the effective diameter of the common transmission type diffraction grating is set as DG, it needs to be D1≤DG so as not to decrease detection efficiency. For example, DG=50 mm. Subsequently, the image of respective parallel-light beams formed on the two-dimensional sensor by the common imaging lens. Here, when the effective diameter of the common imaging lens is set as D2, it needs to be D1≤D2 so as not to decrease detection efficiency. For example, D2=36 mm. With matters as described above, it is possible to collectively acquire wavelength dispersion spectra of respective light beams emitted from the light-emitting-point array. Finally, temporal change in respective wavelength dispersion spectra is analyzed so as to obtain temporal change in intensity of fluorescence of four colors and determine the sequence of base species, that is, the base sequence.
Other means for simultaneously detect fluorescence of four colors is illustrated in FIG. 2 of NPL 1. First, light beam emitted from one light-emitting area is turned into parallel-light beam by one condensing lens (here, objective lens). Here, when the entire width of the light-emitting area is set as W, the focal length of the objective lens is set as f, and the effective diameter is set as D1, W<f and W<D1. The objective lens in use is UPLSAP0 60× W which is the Olympus's product, and W=0.44 mm, f=3 mm, and D1=20 mm. Next, the parallel-light beam is divided into four parallel-light beams of four colors by one set of three kinds of dichroic-mirrors. Subsequently, images of respective parallel-light beams are formed on four two-dimensional sensors by one set of four imaging lenses. Here, when the effective diameter of each imaging lens is set as D2, it needs to be D1<D2 so as not to decrease detection efficiency. With matters as described above, it is possible to collectively acquire four-divided images of four colors of the light-emitting area.
On the other hand, other means for simultaneously detect light beams emitted from the light-emitting-point array is illustrated in FIG. 1 of PTL 2. First, respective light beams emitted from the light-emitting-point array are turned into the parallel-light beams by an individual condensing-lens array. Here, when intervals between the light-emitting points is set as p and the number of light-emitting points is set as n, the entire width of the light-emitting-point array is W=p*(n−1), and when the effective diameter of each condensing lens is set as D1, D1<W. It is set that D1<p to thereby make it possible to set an individual condensing-lens array in which respective condensing lenses are aligned in a straight line. Next, respective parallel-light beams are made incident on respective individual sensors of the individual sensor array. With matters as described above, it is possible to collectively acquire intensities of light beams emitted from the light-emitting-point array.


Enhanced methods of recovering hydrocarbons from a hydrocarbon reservoir having a production zone and a water zone underlying the production zone include measuring viscosities of formation water and hydrocarbon from the hydrocarbon reservoir, lowering a mobility ratio of the formation water with respect to the hydrocarbon by formulating a viscosifying polymer blend; forming viscosified water from the formation water in the hydrocarbon reservoir by injecting the viscosifying polymer blend into the water zone of the hydrocarbon reservoir; producing the viscosified water from the hydrocarbon reservoir; and producing the hydrocarbons from the hydrocarbon reservoir.

The background description provided herein is solely for the purpose of generally presenting the context of the illustrative embodiments of the disclosure. Aspects of the background description are neither expressly nor impliedly admitted as prior art against the claimed subject matter.
Polymers, both organic and inorganic, have been utilized for more than 30 years in different flooding strategies adapted to facilitate the horizontal movement of hydrocarbons from a wellbore where the polymer is injected towards other producing wells in the vicinity. These strategies seek to mobilize hydrocarbons horizontally from the point of injection employing a mixture of water and polymers to the productive region around a producing well. All the prevailing methodologies share the common drawback that nature favors the movement of hydrocarbons vertically rather than horizontally within any given hydrocarbon bearing porous medium.
Because of the natural heterogeneity found in all oil-bearing strata and the fact that an injected fluid will always find its path of least resistance from the point of injection to the point of extraction, all manner of conformance control issues arise when attempting to mobilize hydrocarbons horizontally in a traditional polymer flood. Even in a homogenous reservoir, the displacing polymer will channel through a more viscous oil in a process known as viscous fingering if the viscosity of the injecting polymer fluid is lower than that of the hydrocarbon being mobilized.
Conformance control measures may be implemented to mitigate the phenomenon that the displacing fluid such as a water or polymer/water mixture will not be displaced out radially in a piston-like fashion uniformly displacing the hydrocarbons but instead fingers through the hydrocarbon bearing strata leaving large volumes of oil which remain immobilized and immovable to the producing wellbores. In viscous fingering, the lower viscosity injectant fingers through the more viscous oil, allowing the injectant to reach the producing wellbore first, at which point the less-viscous injectant will be preferentially mobilized in lieu of a more viscous hydrocarbon to the producing wellbore, thus bypassing and leaving behind hydrocarbons which would otherwise be mobilized and produced.
Accordingly, enhanced hydrocarbon recovery methods which facilitate production of hydrocarbon from a hydrocarbon reservoir by beneficially altering the mobility ratio of formation water with respect to hydrocarbon may be desirable for some applications.

Viscosified water injection methods for enhancing hydrocarbon recovery from wells


A control circuit of the present disclosure can directly coupled with AC power grid to control and adjust an LED lamp. The control circuit includes a protection unit, an anti-interference unit, an adjusting unit, an auxiliary control unit, a light emitting module, a low-flicker control unit, an ESD protection unit, an output unit and a plurality of IC unit. the adjusting unit adjusts and control a luminance of the light emitting module, the auxiliary control unit assistants to adjust the luminance of the light emitting module and increase a compatibility between the adjusting unit and the IC unit.

Light emitting diode (LED) lamp with energy saving, environmental protection, long life etc has widely occupied the main market position.
Generally, an LED lamp has a control circuit and a driving module therein to convert the alternating current (AC) to an adaptive current which the LED lamp needed. Thus, the control circuit and driving module has increased the price of the LED lamp. Further, the generally control circuit of LED lamp controls the LED lamp turn on or turn off. However, generally, the control circuit of LED lamps cannot adjust a light of the LED lamp or adjusts the light badly.


In one embodiment, a gripping system for a tong for making up and breaking out tubulars is provided. The gripping system is coupled to the rotary of the tong. The gripping system includes an active jaw and two passive jaws disposed interior to the rotary. Preferably, the two passive jaws are separately by less than 120 degrees from each other and are pivotally connected to rotary. The gripping system is adapted and arranged to allow each passive jaw to react the same amount of force as the gripping force applied by the active jaw. In another embodiment, a rotary locking apparatus is provided to lock or unlock the rotary of the tong.

1. Field of the Invention
The present invention relates to apparatus for making up and breaking out tubular connections. Particularly, the present invention relates to a gripping system for an apparatus for making and breaking tubular connections. The present invention also relates to a locking apparatus for a rotary.
2. Description of the Related Art
Oilfield tubulars such as drill pipe and casing are employed in sections which are joined together at their ends by threaded connections. Typically, power tools are used to couple ("make up") or decouple ("break out") threaded connections. Power tools such as tong assemblies have been developed to threadably secure tubulars together.
A tong assembly generally includes a power tong and a backup tong. The power tong is associated with a power drive to grip and apply torque to a first tubular to cause it to rotate. The backup tong is adapted to grip second tubular during engagement between the tubulars. The backup tong typically maintains the second tubular in a stationary position, thereby allowing relative rotation between the first and second tubulars. The backup tong may also allow some radial or axial displacement between the tubulars to accommodate deviations between the shapes of the tubulars during makeup.
The power tools generally used to connect tubulars are adapted and designed to provide the appropriate torque to achieve proper threaded connection. The threads may become damaged or stripped when excessive force is applied. Typically, the power tongs are provided with torque gauges to prevent damage to the threads. In many arrangements, hydraulic power is used to operate the power tool.
Many different gripping systems are known to be used for a tong. In one example, the tong may only have one powered jaw. In this system, the "active" jaw is a cam driven master jaw and the remaining "passive" jaws react to the forces of the active jaw. In some instances, the passive jaws may only react 50% of the gripping force applied by the active jaw, as illustrated in FIG. 1. In this situation, the load will not be equally displaced between the jaws, e.g., the active jaw supplies 10 ton, while each of the passive jaws only react 5 tons.
In order to make up or break out a connection between tubulars in a tubular string, torque must be supplied over a large angle without having to take time to release and clamp the tubular again. For some jaw assemblies, the torque of the rotor enters the active jaw through a roller disposed at the back of the active jaw. When a small diameter tubular is handled, the active jaw may swivel to cause the gripping force to offset, thereby by damaging the pipe surface. It is also known that when used at high torques, some jaw assemblies tend to tilt and provide a non-uniform load on the tubular surfaces. When the jaw assembly tilts, only a portion of the jaw assembly contacts the tubular, thereby causing damage to the tubular, limiting the torque that can be applied, and causing failure of the jaw assembly itself.
There is a need, therefore, for a gripping system having a passive jaw adapted to transmit a reactive force that is equivalent to the gripping force applied by the active jaw. There is also a need for an improved gripping system for transferring torque to the tubular. There is a further need to prevent rotation of the rotary when it is open.


A high voltage MOS transistor including a substrate, a well, a gate insulation layer, a gate, two drift regions, a channel region, a source/drain region and an isolation structure is provided. The well is disposed in the substrate and the gate insulation layer is disposed over the substrate. The gate is disposed over the gate insulation layer. The two drift regions are in the well at two sides of the gate and the width of the gate is smaller than or equal to that of the drift regions. The channel region is disposed between the drift regions and the width of the channel region is greater than that of the drift regions. The source/drain regions are formed within the drift regions. The isolation structure is disposed inside the drift regions between the source/drain region and the channel region. The drift regions enclose the source/drain regions and the isolation structure.

1. Field of the Invention
The present invention relates to a metal-oxide-semiconductor (MOS) transistor and fabricating method thereof. More particularly, the present invention relates to a high voltage MOS transistor and fabricating method thereof.
2. Description of the Related Art
High voltage metal-oxide-semiconductor (MOS) transistors are widely used in electronic products that require high voltage, such as flash memory or the control circuit of a flat panel display. Since the high voltage MOS transistor must operate at a high voltage without any signs of electrical breakdown, the breakdown voltage of a high voltage MOS transistor is higher than most conventional devices.
FIG. 1 is a top view of a conventional high voltage metal-oxide-semiconductor (MOS) transistor. As shown in FIG. 1, the high voltage MOS transistor 100 mainly comprises a substrate 100, a well 110, two drift regions 120a/120b, two source/drain regions 140a/140b, a channel region 130, a gate 150 and a gate insulation layer (not shown). The well 110 is formed within the substrate 100. The two drift regions 120a/120b are formed within the well 110. The source/drain regions 140a/140b are formed within the drift regions 120a/120b, respectively. The channel region 130 is formed between the source region 140a and the drain region 140b. The gate 150 is formed over the substrate 100 and the gate insulation layer is formed between the gate 150 and the substrate 100. In general, the width of the device is determined by the width W4 of the source region 140a and the drain region 140b. In FIG. 1, the width W1 of the gate 150 in the high voltage device is greater than the width W2 of the drift regions 120a/120b as well as the width W3 of the channel region 130. One major disadvantage for this layout is that when the width of the device is smaller, charges in the source region 140a can easily flow from the drift region 120a along the edge of the gate 150 into the drift region 120b, leading to unnecessary current leakage.
FIG. 2 is a top view of another conventional high voltage metal-oxide-semiconductor (MOS) transistor. Compared with FIG. 1, the width W3′ of the channel region 230 of the high voltage MOS transistor in FIG. 2 is reduced. In other words, the width W3′ of the channel region 230 is smaller than the width W2 of the drift regions 120a/120b. However, one major problem for this layout is that the sub-threshold current will increase following a reduced dimension of the device.

High voltage metal oxide semiconductor transistor and fabricating method thereof


A storage system and data management method is provided that improves the reliability and fault tolerance of the hard disks saving data utilizing an AOU function.

1. Field of the Invention
The present invention relates to a storage system and data management method that is particularly appropriate for application to storage systems ensuring reliability and fault tolerance for stored data.
2. Description of Related Art
In the related art, a method of managing a plurality of hard disks using a RAID (Redundant Array of Independent/Inexpensive Disks) exists for storage systems managing data using storage apparatus. At least one or more logical volumes (hereinafter referred to as "logical volumes") are formed on a physical storage region provided by a large number of hard disks.
Of the RAID methods, for example, a method referred to as RAID1 exists to ensure that data is not lost from the host apparatus even if one hard disk fails. In this method, the host apparatus accesses one virtual logical volume (hereinafter referred to as "virtual volume") but in reality adopts a method where the same data is stored on respective hard disks constituted by two hard disks. According to this method, it is possible to ensure data redundancy.
Further, other technology for providing data redundancy is disclosed in patent document 1 where technology is provided where a module is equipped with a plurality of data storage sections comprised of slice regions formed in advance in order to store sliced data, a management information storage section for managing the slice regions, and a communication function section for communicating sliced data stored in the data storage sections and management information for storing within the management information section.
On the other hand, technology referred to as a so-called AOU (Allocation On Use) function where virtual volumes are supplied to a host apparatus without making logical volumes of fixed capacities from storage regions of a hard disk and where storage regions of a hard disk are dynamically allocated to virtual volumes according to requests from the host apparatus is also proposed. According to technology using this AOU function, it is possible to dynamically extend the capacity of a virtual volume.
[Patent Document 1]
International publication pamphlet number 2004/104845
However, with the RAID 1 method referred to as mirroring, two hard disks are written to at the same time when data is written to a virtual volume. This means that the hard disk of the smaller capacity has to be catered for in the event that the capacity of the two hard disks is different.
Further, on the other hand, in the event that a fault occurs where functioning as a RAID group no longer takes place, with a storage system that does not utilize an AOU function, it is no longer possible to use logical volumes belonging to this group, but with storage systems utilizing an AOU function, it is no longer possible to use virtual volumes where regions are allocated from the RAID group. There is therefore the problem that storage systems utilizing an AOU function exert substantial influence on the system as a whole compared with storage systems that do not utilize and AOU function.
The present invention therefore sets out to provide a storage system and data management method that utilizes an AOU function and improves reliability and fault tolerance of a hard disk saving data.

Storage system and data management method

Abstract: A storage system comprises a first correlating section for correlating a plurality of RAID groups composed of a plurality of physical disks, and the pool region, a second correlating section for correlating the pool region and the storage regions of the virtual volumes, a first allocation section for allocating first data from the host apparatus to the first storage region of the first RAID group based on write requests from the host apparatus, and a second allocation section for distributing second data from the host apparatus at and allocating the second data to any storage regions of the RAID group, with the exception of the first storage region of the first RAID group allocated by the first allocation section, based on write requests.


Apparatus, and associated methods, for stabilizing an image. The apparatus includes an aiming device to be aimed at a moving image, a transforming device which transforms the image into a non-moving image; and a displaying device which displays the non-moving image. The apparatus and methods are of particular benefit, for example, to individuals with Parkinson's disease and/or individuals attempting to work on a laptop computer or read a book while travelling via airplane, boat, train or road vehicle.

Eye strain and fatigue have long been recognized as undesirable consequences presented to individuals attempting to read or do close work under given conditions or in given medical contexts. For instance, an individual suffering from Parkinson's disease may experience eye strain and fatigue when reading a book since the person's hands may be shaking too much.
Other problems may be encountered by any individual when attempting to read or do close work in or on a moving vehicle. For example, when an individual attempts to read a book while riding in a car, his or her eyes will almost inevitably grow tired since the book will likely be shaking continually. On the other hand, an individual riding in an airplane, along with reading material or another subject of close work, may be shaking at a constant rate due to turbulence experienced by the plane. Similar problems may be encountered on a boat. Thus, all of these vehicular movement issues will typically affect the manner in which an individual visually perceives his or her environment, leading almost inevitably to eye strain and fatigue and possibly leading to nausea. Normally, a recommended solution for "sea-sickness", "air-sickness" or "car-sickness" in instances such as these is to look at a perceptually stationary entity, such as the horizon.
However, a need has been recognized in connection with proceeding beyond simplistic solutions for relieving eye strain and fatigue, and feelings of nausea, in the context of vehicular movement, and to provide somewhat of a user-friendly mechanism to attend to such matters. A need has also been recognized in connection with attending to such matters, in a similar manner, in connection with medical issues that might affect an individual regardless of whether he or she is in vehicular transit.

Method, apparatus and program storage device for image position stabilizer

International Business Machines Corporation


A steel sheet for a two-piece can, the steel sheet includes: by mass %, C: 0.010% or more and less than 0.030%; Si: 0.04% or less; Mn: 0.10% or more and less than 0.40%; P: 0.02% or less; S: 0.020% or less; Al: more than 0.030% and 0.100% or less; N: 0.0005% or more and less than 0.0030%; B: 0.0005% to 0.0030%; and balance Fe and inevitable impurities, wherein an amount of N that is present as BN and a whole amount of N satisfy the following expression (1):[N as BN]/[N]>0.5   (1),                where N as BN represents the amount of N that is present as BN, and N represents the whole amount of N, a yield point is 280 MPa or more and less than 420 MPa, yield elongation is 3% or less, and Δr is −0.30 to 0.20.

From the standpoint of a recent environmental load reduction and cost reduction, reducing a used amount of steel sheets used for food cans, beverage cans, aerosol cans, and the like is required. For this reason, irrespective of a two-piece can and a three-piece can, reducing thickness of steel sheets as a material is advanced. In the processing on a two-piece can, when a sheet thickness of a can body part is made thinner by ironing processing in addition to drawing processing, a large load may be applied to a material and this load may cause defect in can manufacturing such as body burst. Thus, a steel sheet having small deformation resistance, in other words, having a low yield point, is suitable when processing the steel sheet to a can body especially having a high degree of processing. Furthermore, the processing into a two-piece can requires making an ear (earing) small enough in drawing processing and not generating stretcher strains. In order to ensure corrosion resistance, a request for omitting steps such as drying and baking necessary for a coating step and reducing energy costs by using a laminated steel sheet instead of coating a tin steel sheet and TFS steel sheet becomes strong.
For example, as a steel sheet for a two-piece can, Patent Literature 1 discloses a steel sheet for a drawn can having extremely excellent earing characteristics. The steel sheet for a drawn can has the composition consisting of, by weight %, C: 0.010-0.100%, Si: ≤0.35%, Mn: ≤1.0%, P: 0.070%, S: ≤0.025%, sol. Al: 0.005-0.100%, N: ≤0.0060%, B: B/N=0.5-2.5, and the balance Fe and inevitable impurities, and randomizes a crystal orientation of the steel sheet by defining a heating speed upon recrystallization annealing as 5° C./s or higher in a range where a sheet thickness t is 0.15-0.60 mm and a Δr value is +0.15-−0.08.
Patent Literature 2 discloses a steel sheet for a two-piece container having excellent neck wrinkle resistance. The steel sheet for a two-piece container includes, by weight %, C: 0.01-0.05% and N: 0.004% or less, and satisfies (N existing as AlN)/(contained N)≥0.5.
As a laminated steel sheet for a two-piece can, Patent Literature 3 discloses a steel sheet for a resin coated steel sheet that is an original sheet used for a resin coated steel sheet suitable for use of a thinned deep drawn and ironed can. The components of the original sheet consist of C: 0.008-0.08%, Si≤0.05%, Mn≤0.9%, P≤0.04%, S≤0.04%, Al 0.03%, N≤0.0035%, the balance Fe and inevitable impurities, and an average crystal grain size of the original sheet before coating a resin is 8 μm or less and the maximum surface roughness (Rmax) is 5 μm or less.
As a steel sheet for a can having excellent processability, Patent Literature 4 discloses a steel sheet for a can having excellent processability and surface roughening resistance. The steel sheet for a can has component composition consisting of, by mass %, C: 0.010-0.050%, Si: not more than 0.03%, Mn: not more than 0.30%, P: not more than 0.02%, S: not more than 0.02%, Al: not more than 0.04%, N: not more than 0.004%, B: 0.0010-0.0025%, and the balance Fe and inevitable impurities. In the steel sheet for a can, a ferrite average crystal grain size is 10.0 μm or less, yield strength is 280 MPa or less, BN precipitate having a grain size of 80 nm or more and AlN precipitate having a grain size of 50 nm or less are included, and the content of the BN precipitate is equal to or more than the content of the AlN precipitate.

Steel sheet for two-piece can and manufacturing method therefor


The present invention describes an element supply device of a setting welding device for a bolt-like welding auxiliary joining part with head and shaft. This element supply device comprises two scissor-like arranged clamping jaw levers which define a blind hole channel with a nest-like end position for receiving the welding auxiliary joining part. Further, the element supply device comprises a first actuator and a second actuator by means of which the nest-like end position can be positioned suitably with respect to an electrode punch.

In the prior art, different connection methods processing auxiliary joining parts are known. Among these connection methods are pure mechanical connection methods as for example the punch riveting or bolt setting. At such devices, the joining element is supplied to the joining channel of the setting device for example via a profiled tube or another element supply arrangement operated with pressurized air. Within the joining channel, the punch of the setting device moves on a straight movement line as part of a joining movement toward for example a die to produce a connection.
A similar pure mechanical joining method is realized by a nailing device to which a plurality of nails is supplied automatically. For this, according to U.S. Pat. No. 5,492,262, a nail strip wound up within a magazine is unwound within a supply device to transfer individual nails to the joining device. As these nails are connected to each other first of all by means of the nail strip, especially the separation of the nails is complex and cannot automatically be transferred to other joining methods.
DE 10 2010 060 141 A1 describes the positioning and supplying of auxiliary joining parts to a friction welding device. The supply device for the friction welding elements provides a clamping jaw arrangement forming the end of a supply channel for friction welding elements. The end position of the supply channel is arranged directly below the rotating punch of the friction welding device. An axially movable adjusting element having different thickness portions with respect to the length of the actuation element is arranged between the two clamping jaws such that an axial displacement of the actuation element causes a different wide opening of the clamping jaws. Correspondingly, a thickness portion of the actuation element and thus a specific distance of the clamping jaws is assigned to the supply of a friction welding element while a larger thickness portion of the actuation element and thus a wider opening of the clamping jaws is provided so that the rotating punch, upon passing through the two clamping jaws, takes up the joining element positioned there and supplies it to a joining position. Due to the combination of the lateral movable clamping jaws and the axially displaceable actuation element in direct adjacency of the rotating punch, this is a complex and space-consuming construction which is adapted especially to the supply of pure mechanical torque loads to a joining element.
At other friction welding devices, it is, however, advantageous to supply the friction welding elements directly to a joining channel of the friction welding device. This is described in DE 10 2004 039 398 A1.
At resistance welding other constructions are realized compared to the above-described supply constructions and supply principles of the joining elements because here, besides mechanical loads, also electrical loads are applied to the joining element. For example, DE 43 18 908 C1 describes an indirect supply of the welding auxiliary joining parts to the joining location. These welding auxiliary joining parts are first of all supplied to a pivotable transfer device by means of a supply channel. This transfer device retains the welding auxiliary joining parts by means of a magnet. Then, a combined linear movement for removing the welding auxiliary joining part from the supply channel and a pivoting movement of a lever arm takes place with this welding auxiliary joining part. This movement positions the welding auxiliary joining part below the one welding electrode of the welding device. Before the effective welding takes place, the welding auxiliary joining part is arranged within the welding electrode by means of a retaining device.
This ensures that already prior to the beginning of the welding process the lever arm and, thus, the supply device can be removed from the electrodes of the welding device. As the welding auxiliary joining part is clamped solely into the electrode, this results in inaccuracies in the positioning of the welding auxiliary joining part at the joining location. Further, the here used supply device is also complex in its construction due to the different movements to be performed and the coordination with respect to each other.
DE 10 2013 207 284 A1 describes a setting welding device by means of which a welding auxiliary joining part is set into at least two components under combined mechanical and electrical loads. Here, the advantageous discovery is used that the electrical loads known from resistance welding methods can support a mechanical joining process which further realizes a welding process coordinated with the mechanical joining process. Similar to the known setting devices, a welding auxiliary joining part is here supplied into the joining channel below the punch. While the welding auxiliary joining part is held there in an intermediate position, the punch of the welding setting device moves the welding auxiliary joining part toward the components to be joined to each other. This type of element supply does not always ensure a sufficiently accurate positioning of the welding auxiliary joining part at the components to be joined to each other. This may lead to disadvantages at the connection quality and/or the connection strength.
It is thus an object of at least certain implementations of the present invention to provide a setting welding device as well as an element supply device for such a setting welding device by means of which a setting welding process can be improved, especially compared to the prior art and the device can be realized in a simpler and more cost-effective way. This applies with respect to a possible accuracy of the supply of welding auxiliary joining parts as well as with respect to the positioning of the welding auxiliary joining parts for the preparation of the connecting of the at least two components. Accordingly, at least some implementations of the present invention may also provide an improved connection method by means of a setting welding device.

Element supply device of a setting welding device


A sensor device, system, and method for monitoring the internal pressure and temperature of a refrigerant tank during a recovery operation to control a purge operation of the tank based on the conditions thereof during the recovery operation. The sensor device, system, and method further utilize an external temperature sensor, the external temperature sensor operable to indicate that it is properly positioned on the surface of the tank.

During the recovery or recycling of refrigerant, non-condensables (typically air) may end up in the refrigerant storage tank. Reducing non-condensables from the storage tank can be achieved using a purge operation.
The most reliable and economical way to purge air from the tank is to measure pressure and temperature of the refrigerant mixture within a storage tank, compare the measurements to a standard refrigerant saturation table indicating what a pure refrigerant pressure would be at that temperature, and when the actual pressure of the refrigerant mixture within the tank is above the saturation level, indicating unacceptable non-condensable presence, purge the non condensables from the tank via the vapor valve until the storage tank is reduced to the proper pressure. Having sensors disposed outside of the tank improves the versatility of the system by making it compatible with standard conventional tanks that do not have internal temperature sensors. Pressure transducers can be disposed within the recovery system at any point having direct fluid communication with the tank. Temperature sensors can be placed on the surface of the tank, but with inaccuracy if not placed correctly. What is needed is a system that provides for the proper and accurate placement of an external temperature sensor and then an automated approach for determining proper placement of an external temperature sensor for storage tank non-condensable purging.

Tank temperature probe with positional sensor


A switchgear or controlgear with unmanned operation and maintenance includes: an equipment safety system that includes a steering and control system for calculating a action radius of a robot system. An acting area in an internal space of the switchgear or controlgear is divided into virtual zones. Each action in each virtual zone is precalculated predictively as a micro simulation in which actual sensor data are considered before an intended action is triggered.

Switchgears or controlgear with unmanned operation and maintenance ensures the same personnel safety levels as current generation of switchgear or controlgear by excluding human operators from the operation and maintenance processes and by the outer enclosure 23. However, due to open internal space without segregations 22 and embedded robotic system 21 new requirements to equipment safety assurance must be defined. Current common practice of protection provided by enclosure would not be beneficial inside switchgear or controlgear with unmanned operation and maintenance, therefore other means to ensure equipment safety are required.

Switchgear or controlgear with unmanned operation and maintenance, and method of operating the same


A thermal imaging camera, with an electromechanical shutter device for interrupting the ray path from time to time, has a motor (1), a motor shaft (2) and a shutter flag (3). The motor shaft (2) and the shutter flag (3) are in connection with one another via a crank-and-rocker mechanism. The crank-and-rocker mechanism includes a crank (4) rotatable about the motor shaft (2) with a crank pin (5) and with a rocker (6), at one end of which an elongated hole (8) is provided, which forms a rectilinear sliding joint together with the crank pin (5), and at the other end of which the shutter flag (3) is formed.

A thermal imaging camera with a shutter device is known from U.S. Pat. No. 7,484,885 B1.
It is common in thermal imaging cameras to briefly introduce a surface of a homogeneous temperature, which completely interrupts the ray path, into the ray path at regular intervals for image correction. Electromechanical shutter devices, which make possible a change in state between fully interrupted and fully open ray path especially extremely rapidly, are used for this.
A thermal imaging camera with an electromechanical shutter device, with which a shutter flag is pivoted into the ray path in order to make a temperature reference available for image correction, is known from U.S. Pat. No. 7,484,885 B1. The shutter flag is mounted eccentrically directly on the motor shaft of a motor and is rotated to and fro between two end positions correspondingly without transmission with the torque acting on the motor shaft. This leads to high acceleration peaks at the beginning and at the end of the motion and consequently to abrupt start and braking and great vibrations of the shutter flag when the end positions are reached.
Another drawback of the shutter device shown in U.S. Pat. No. 7,484,885 B1 is that pronounced electric current peaks develop in the motor during start-up and braking, which makes use especially difficult in areas with explosion hazard.
Assembly units for such fields of use have, as a rule, the "intrinsically safe" type of protection, i.e., no state leading to the ignition of an explosive gas-air mixture can develop even in case of error. This is usually achieved by limiting the current and voltage to values with which the needed ignition energy is not made available in case of short-circuits or during switching operations.
However, the dynamic characteristic deteriorates and the shutter device becomes slower if the electric power of the drive is limited to the permissible extent. The highly open optical systems employed in thermal imaging cameras require heavy shutters having a relatively large area, so that fast shutter devices, which meet the requirements of explosion protection, can hardly be embodied with this drive concept.

Thermal imaging camera with a fast electromechanical shutter device


A vehicle heating/cooling system has first and second fluid circulation loops for circulating engine coolant and automotive fluid. A first heat exchanger transfers heat from the coolant to air for the passenger compartment. A second heat exchanger transfers heat between the coolant and automotive fluid. A first valve has first and second inlets for receiving coolant from hot and cold coolant sources, and an outlet for discharging coolant to the second heat exchanger. A second valve has an inlet for receiving coolant from the first coolant source, and an outlet for discharging coolant to the first inlet of the first valve. The valve positions change with temperature of the coolant and the automotive fluid, providing preferential heating of the passenger compartment during cold start-up of the vehicle. The second heat exchanger and valves may be provided in a temperature control module.

It is well understood in the automobile industry that automobiles function most efficiently once all fluids are circulating within the automobile systems at their optimum operating temperatures.
Automotive AWU systems are designed to quickly bring automotive fluids to optimal operating temperatures at start-up, in particular at cold start-up conditions. However, some AWU systems rely on removing heat from the system in an effort to quickly bring fluids to their optimal operating temperature which has an adverse effect on cabin warm-up and/or defrost times, and may also delay engine warming. In cold climate regions where passenger comfort and defrosting functions at cold start conditions are often considered a priority for users of the automobile, removing heat from the system in order to warm automobile fluids at the expense of cabin warm-up and/or defrost can be problematic. Also, delaying engine warming may have a negative impact on overall fuel economy.
Some AWU systems attempt to improve warm-up at cold start conditions without adversely affecting cabin warm-up or defrost times. However, such systems can be costly and can add to the complexity of the installation of the system and often favour either cabin warm-up or fluid warm-up at the expense of the other. In current economic climates where cost effectiveness and robustness of systems/components are valued and often considered a priority, an improved AWU system that aims to decrease the time it takes for key automobile fluids to reach their optimal operating temperature without delaying cabin warm-up and/or defrost times is desirable.


A device includes an epitaxy structure having a recess therein, a dielectric layer over the epitaxy structure, the dielectric layer having a contact hole communicating with the recess, a dielectric spacer liner (DSL) layer on a sidewall of the recess, a barrier layer on the DSL layer, and a conductor. The DSL layer has an opening. The DSL layer extends further into the epitaxy structure than the barrier layer. The conductor is disposed in the contact hole and electrically connected to the epitaxy feature through the opening of the DSL layer.

The present disclosure relates to semiconductor devices.
The scaling of integrated circuits is a constant effort. With circuits becoming smaller and faster, metal silicide contacts are often used to obtain higher circuit performance. Since the metal silicide contacts have lower contact resistance than non-silicided regions, integrated circuits using this technology can have smaller contact areas, and use less energy to pass electricity through them. Together, these effects lead to higher-performance integrated circuits.

Semiconductor device and method for manufacturing the same

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.


An electrostatic induction-type vibration power generation device and method for improving a power generation amount, and extracting an external electric field from a spontaneous polarization electret. A pair of conductive plates is disposed with a gap therebetween. A charged body formed of a spontaneous polarization electret having predetermined thickness has a positively charged lower surface and negatively charged upper surface. The charged body is between conductive plates in contact with one conductive plate. The gap between the conductive plates is displaced in a direction vertical to the surfaces of the spontaneous polarization electret, whereby an electrostatic capacitance changes and electric power is generated. The other conductive plate is disposed at a position where an absolute value of an external electric field emitted outside from the charged body is between 2.7×107 V/m and 1.5×1010 V/m. Moreover, the thickness of the spontaneous polarization electret is between 1 mm and 60 mm.

In recent years, electrostatic induction-type vibration power generation devices which use a charged body called an electret have been actively developed. This device includes an electret and electrodes provided so as to face a charged surface of the electret. This device forms an electrostatic capacitance when an external electric field emitted from the charged surface of the electret induces electric charges on the counter electrodes. When a relative position between the electret and the electrodes is changed by an external force in this device, the electrostatic capacitance changes and an electric current is created in a load connected thereto. Thus, electric power can be obtained (for example, see Patent Literatures 1 to 3).
When this vibration power generation device is used as a driving source of a small sensor, for example, it is possible to shorten a sensing interval and to reduce the size of the module by improving the power generation amount. As a means of improving the power generation amount of the vibration power generation device, a method of obtaining a larger surface charge density than conventional corona discharge methods disclosed in Patent Literatures 1 to 3 is proposed (for example, see Patent Literature 4). In this method, a spontaneous polarization of monocrystalline zinc oxide is used as an electret by focusing on the fact that the power generation amount is proportional to the square of a surface charge density of a charged body. Based on the same reasons, as a means of obtaining a high surface charge density, a method of using a ferroelectric substance having high crystalline orientation as an electret is proposed (for example, see Patent Literature 5). Further, a method of manufacturing an electret formed of a ferroelectric material, for applications to electret capacitor microphones is proposed (for example, see Patent Literature 6).

Electrostatic induction-type vibration power generation device and method of manufacturing the same


A semiconductor memory device includes a row decoder, a control circuit, and a memory cell array having an open bit-line structure. The memory cell array includes a plurality of word lines coupled to the row decoder, a plurality of bit lines, a plurality of memory cells, a plurality of sense amplifier blocks, and a plurality of burn-in voltage supply lines coupled to the plurality of sense amplifier blocks in a predetermined order, respectively. The control circuit controls the row decoder and the memory cell array for performing a burn-in test. During the burn-in test, the burn-in voltage supply lines are provided with at least two different burn-in voltages. The burn-in voltage supply lines respectively coupled to the sense amplifier blocks that are adjacent to each other are provided with different burn-in voltages during the burn-in test.

1. Field of the Invention
Example embodiments of the present invention relate to a semiconductor memory device, and more particularly to a semiconductor memory device capable of applying different voltages in cells coupled to one word line during a burn-in test.
2. Description of the Related Art
According to percent defective statistics of semiconductor devices, a percent defective of products that are manufactured at one time is initially high but becomes lower and stable after the lapse of time. When a product having a defect operates in extreme conditions, the defect is typically aggravated, so that the product itself becomes defective more rapidly than a normally operating product. Thus, an amount of time in which a percent defective of products as a whole becomes stable is required to be shortened. In this manner, a method for screening weak cells in semiconductor memory devices in advance by operating in extreme conditions is referred to as a burn-in test.
A burn-in test in semiconductor devices is performed at a high voltage and a high temperature. A defect due to a weak cell may be detected by applying a high voltage to a semiconductor memory device. Generally, a burn-in test is performed on a large number of cells simultaneously, so as to shorten testing time. That is, word lines are activated simultaneously and data are written by sense amplifiers during the burn-in test. In this case, a voltage applied to the word line, and a voltage for writing data is higher with respect to that in a normal operation.
FIG. 1 is a block diagram illustrating a conventional burn-in test operation of a semiconductor memory device.
Referring to FIG. 1, a memory cell array 10 has an open bit-line structure, and includes a plurality of memory cell areas and a plurality of sense amplifier columns. The memory cell areas are arranged on both sides, centering on the sense amplifier column. The sense amplifier columns and the memory cell areas are arranged in a matrix configuration. That is, the sense amplifier columns and the memory cell areas are arranged in both horizontal and vertical directions in relation to one another. The sense amplifier column includes a plurality of sense amplifier blocks S/A BLOCK. The sense amplifier block includes a sense amplifier, a pre-charger and the like. Burn-in voltage supply lines 11 and 12 are arranged in a direction along the sense amplifier column, respectively, and coupled to the sense amplifier blocks, respectively. Bit lines BL and BLB that are complementary to each other are extended to both sides of one sense amplifier block, approaching close to adjacent sense amplifier blocks. An interval between two bit lines in the sense amplifier block is about half of an interval between two bit lines in the memory cell area.
A plurality of word lines are extended in a vertical direction of the bit lines, and memory cells are formed at intersection regions of the word lines and the bit lines. Data '1' is stored in a cell coupled to the bit line BL when an applied voltage is high, and data '1' is stored in a cell coupled to the complementary bit line BLB when an applied voltage is high. That is, the cell coupled to the bit line BL corresponds to a true cell and the cell coupled to the complementary bit line BLB corresponds to a complementary cell. In a normal operation mode, the pre-charger receives a pre-charge voltage and provides a received pre-charge voltage to the bit lines according to a pre-charge signal PEQB.
The above-described structure of the memory cell arrays is referred to as an open bit-line structure. In comparison with a memory cell array having a folded bit-line structure, a memory cell array having an open bit-line structure has a disadvantage of noise that is generated from a bit line, a sensitivity of a sense amplifier, size, and the like, but has an advantage of a number of memory cells per unit area.
During a burn-in test, the word lines are activated simultaneously, a burn-in voltage VBL is applied to the pre-charger via the burn-in voltage supply lines 11 and 12, and the pre-charger provides the burn-in voltage VBL to the bit lines. In this case, the bit line BL 13 is provided with a first burn-in voltage VBL_ODD and the complementary bit line BLB 14 is provided with a second burn-in voltage VBL_EVEN. Thus, a memory cell 16 coupled to the bit line 13 is provided with the first burn-in voltage VBL_ODD and a memory cell 17 coupled to the complementary bit line 14 is provided with the second burn-in voltage VBL_EVEN. For example, the first burn-in voltage VBL_ODD corresponds to a power supply voltage VDD, and the second burn-in voltage VBL_EVEN corresponds to a reference voltage VSS. In case that a physical defect, such as a bridge, is generated between the memory cell 16 and the memory cell 17, the physical defect may be detected when a voltage difference of the burn-in voltages is wide. However, the memory cell 16 and the memory cell 18 are provided with a substantially identical burn-in voltage so that a physical defect between the memory cell 16 and the memory cell 18 may be difficult to detect.
The physical defect, such as the bridge, may be generated between the bit lines. When the bit line 13 is provided with a higher burn-in voltage, and the complementary bit line 14 is provided with a lower burn-in voltage, the physical defect may be detected due to a voltage difference between the burn-in voltages applied to the bit lines 13 and 14, respectively. However, the burn-in voltage applied to the bit line 13 is the substantially the same as the burn-in voltage applied to a bit line 15, so that the physical defect may not be detected.
Korean Patent Laid-Open Publication No. 1999-48397 discloses a method of applying different burn-in stress voltages in cells coupled to one word line, in a case where a memory cell array has a folded bit-line structure. In a conventional memory cell array having a folded bit-line structure, sense amplifier columns respectively include a pre-charge voltage supply line, and a pre-charge voltage is applied to the pre-charge voltage supply lines simultaneously by linking the pre-charge voltage supply lines. The method disclosed in Korean Patent Laid-Open Publication No. 1999-48397 includes applying different burn-in stress voltages to each pre-charge voltage supply line in a memory cell array having a folded bit-line structure, but cannot be applied to a memory cell array having an open bit-line structure.

Semiconductor memory device capable of writing different data in cells coupled to one word line during burn-in test


Techniques and circuitry are used to more rapidly configuring programmable integrated circuits. Configuration data is input into a programmable integrated circuit in parallel via parallel inputs (705), and this data is also handled internally in parallel. The configuration data will be stored in a data register (722). This data register includes two or more serial register chains, each chain being made up of a serial chain of registers. The configuration data is input into the two of more chains of the data registers in parallel. Circuitry is also provided to handle redundancy.

The present invention relates to the field of programmable integrated circuits and in particular, to a techniques and circuitry for more rapidly configuring programmable integrated circuits.
Integrated circuits are important building blocks of the modern age. Technology continues to evolve and integrated circuits continue to provide improved functionality. As integrated circuits improve, so do the electronics systems that are built using integrated circuits. There are many types of integrated circuit such as memories, microprocessors, application specific integrated circuits (ASICs), and programmable logic. Programmable logic integrated circuits such as PALs, PLDs, FPGAs, LCAs, and others are becoming more complex and continually evolving to provide more user-programmable features on a single integrated circuit. Modem programmable logic integrated circuits incorporate programmable logic including logic gates, products terms, or look-up tables. Programmable logic integrated circuits also included embedded user-programmable memory or RAM.
Despite the success of programmable logic, there is a continuing desire to provide greater functionality in a programmable logic integrated circuit, but at the same time, provide greater performance. As programmable logic becomes more highly integrated, more logical functions are provided, and therefore, more configuration bits are required to program or configure the functionality. More configuration bits leads to longer configuration or programming times, which is undesirable. For example, this may cause relatively long system start-up times because programmable logic having volatile memory cells such as static RAM cells need to be reprogrammed upon power up.
Therefore, there is a need to provide techniques and circuitry for more rapidly configuration programmable integrated circuit.
The invention provides techniques and circuitry for more rapidly configuring programmable integrated circuits. Configuration data is input into a programmable integrated circuit in parallel, and this data is also handled internally in parallel. The configuration data will be stored in a data register. This data register has two or more register chains. In one implementation, there is one register chain for each of the data inputs. The configuration data is input into the two of more chains of the data register in parallel. Circuitry is also provided to handle redundancy.
In an embodiment, the invention is a programmable logic integrated circuit. The integrated circuit has n configuration bit inputs to input in parallel, n bits at a time, k configuration bits. The variable n is an integer greater than 1, k is greater than n, and k is a number of configuration bits in a frame for configuring the programmable logic of the programmable logic integrated circuit. The integrated circuit also has a data register to store at least the k configuration bits. The data register has n inputs, each inputting to one of n serial chains of registers of length m, where (m*n) is less than or equal to k.
The data register is divided into n chain and each of n configuration bit inputs is connected to input configuration bits to one of the n chains. In a specific embodiment, n is 8. The registers may be implemented or interchanged with latches, flip-flops, or other circuitry to implement the equivalent functionality.
Furthermore, the programmable logic integrated circuit may include a cyclic redundancy check (CRC) circuit, which is connected to a first the n configuration bit inputs. The cyclic redundancy check circuit performs a cyclic redundancy check on the configuration bits transferred through the first of the n configuration bit inputs. The circuitry will generate an error signal in the case of an error.
A stage X of the data register may include a first register and a second register. In stage X, a first multiplexer has inputs connected to an output of a first register of a stage Xxe2x88x921 of the data register and an output of a second register of stage Xxe2x88x921 of the data register, and an output connected to an input of the first register. A second multiplexer has inputs connected to the output of a second register of a stage Xxe2x88x921 of the data register and an output of the second register of a stage X of the data register, and an output connected to an input of the second register.
Stage X of the data register may further include a third multiplexer having inputs connected to the outputs of the first and second registers of stage Xxe2x88x921 and to the outputs of the first and second registers of stage X, and an output connected to inputs of a stage X+1 of the data register.
In a further embodiment, the invention is a method of configuring a programmable logic integrated circuit. A number of configuration bits are input into the programmable logic integrated circuit in parallel using a first input and a second input. The configuration bits provided by the first input are loaded starting at a first register of a first chain a data register. The first chain includes registers connected together in a serial fashion. The configuration bits provided by the second input are loaded starting at a first register of a second chain the data register. The second chain also includes registers connected together in a serial fashion
In another embodiment, the invention is a programmable integrated circuit including
a first data input and a second data input. A data register holds configuration bits used to configure the programmable integrated circuit. The data register includes a first chain with a number of registers connected in a serial fashion and a second chain with a number of registers connected in serial fashion. The first register of the first chain is connected to the first data input. The first chain has the same number of registers as the second chain. A number of static RAM cells may be configured using the configuration bits.
Other objects, features, and advantages of the present invention will become apparent upon consideration of the following detailed description and the accompanying drawings, in which like reference designations represent like features throughout the figures.

Parallel programming of programmable logic using register chains


In a method for manufacturing a semiconductor device, fin structures each having an upper portion and a lower portion, are formed. The lower portion is embedded in an isolation insulating layer disposed over a substrate and the upper portion protrudes the isolation insulating layer. A gate dielectric layer is formed over the upper portion of each of the fin structures. A conductive layer is formed over the gate dielectric layer. A cap layer is formed over the conductive layer. An ion implantation operation is performed on the fin structures with the cap layer. The ion implantation operation is performed multiple times using different implantation angles to introduce ions into one side surface of each of the fin structures.

With increasing down-scaling of integrated circuits and increasingly demanding requirements of speed of integrated circuits, transistors need to have higher drive currents with increasingly smaller dimensions. Fin Field-Effect Transistors (FinFET) were thus developed. FinFETs include vertical semiconductor fins above a substrate. The semiconductor fins are used to form source and drain regions, and channel regions between the source and drain regions. Shallow Trench Isolation (STI) regions are formed to define the semiconductor fins. The FinFETs also include gate stacks, which are formed on the sidewalls and the top surfaces of the semiconductor fins. Since FinFETs have a three-dimensional channel structure, ion implantation processes to the channel require extra care to reduce any geometrical effects.

Method of manufacturing semiconductor device


An improved food spill catching device (10) with folded straps (12) mounted in a tray portion 10c for attaching the device around the neck of a person is described. The device is preferably provided by forming the straps 12 and trays (10b and 10c) separately as preforms (20 and 30) which are then assembled and formed into the device.

(1) Field of the Invention
The present invention relates to an improved food spill catching device which can be worn by a person in a moving vehicle to catch the food spills and which is also useful as a serving tray. In particular the present invention relates to a device which can be mass produced at low cost.
(2) Prior Art
My U.S. Pat. No. 4,887,315 describes the prior art. Generally the prior art does not describe a device like that of the present invention.
In my U.S. Pat. No. 4,887,315, I described a preferred unitary preform which was folded to assemble the device. The tray produced performs very well; however, because of the unusual shape of the preform there is considerable wastage of material (paper or plastic) upon cutting.


A device is disclosed for ophthalmologic microsurgery for improving the drainage of the aqueous humor in the eye of a living being, wherein the device has an endoscope connected to a monitor screen and includes a tube-shaped probe adapted for insertion into an eye, and one or more channels co-axially disposed therein and provided with optical elements for focusing and transmitting images from the viewing field in the eye, and wherein the probe houses a surgical tool which is movable in axial direction and about the longitudinal axis so that by means of the oscillating and/or vibrating tool a passageway can be opened in the tissue of the trabecular meshwork for connecting the anterior chamber with the Schlemm""s canal.

This application claims the priority of German Patent Applications Serial No. 199 56 515.5, filed Nov. 24, 1999; and No. 199 56 517.1, filed Nov. 24, 1999; and of Swiss Patent Application Serial No. CH 2000 2055/00, filed Oct. 20, 2000, the subject matter of which is incorporated herein by reference.
The present invention relates to a device for carrying out ophthalmologic surgical procedures, in particular a device for improving drainage of the aqueous humor in an eye, wherein the secreted aqueous humor in the region of the iridocorneal angle of the anterior chamber is conducted via the trabecular meshwork into the Schlemm""s canal and from there through the natural channel system.
The functional capacity of an eye depends on the intraocular pressure (IOP) and requires that the influx and outflow of the aqueous humor (humor aqueous) which circulates between the posterior and the anterior chamber and thereby continually regenerates, is at an equilibrium and natural drainage of the aqueous humor is realized by the aqueous humor flowing at the iridocorneal angle (angulus iridocornealis) via the trabecular meshwork (trabeculum corneasclerale) into the Schlemm""s canal and from there via the natural channel system comprising collecting canaliculi and aqueous humor veins.
When changes in the trabecular meshwork occur due to disease or injury, drainage of the aqueous humor is often diminished resulting in a rise of pressure in the eye commonly known as the disease glaucoma that oftentimes leads to visual impairment that can lead to blindness.
From EP-A 0 550 791 a device is known for treatment of the trabecular meshwork concerning changes that lead to obstruction of the aqueous humor drainage induced by diseasexe2x80x94and injury. The device is for injecting a suitable medium into Schlemm""s canal, which has been partially exposed by cutting open the sclera and folding it upwards. Through this procedure, the venous network of the trabecular meshwork is being stretched and opened at several points effecting a pressure compensation that permits to restore the natural drainage of the aqueous humor by way of the openings, and whereby occlusion of the opening walls is substantially prevented when the walls of the opening are wetted (layered) with the highly viscous medium.
The device and method described in the afore-mentioned printed reference which is directed to the hydraulic stretching of the Schlemm""s canal and the resultant bursting of the trabecular meshwork while proven useful, has in practice however shown to be not entirely successful, in particular, opening or stretching of the trabecular meshwork by hydraulic means is unsatisfactory or not realizable at all where due to disease, changes in the trabecular meshwork in the form of clogs and/or occlusions from the trabecular meshwork growing together, have occurred.
It is thus an object of the present invention to provide an improved device for improving the drainage of the aqueous humor within the eye of a living being, obviating the afore-stated drawbacks. In particular, it is an object of the present invention to provide an improved device for carrying out microsurgery, in particular, for cases where the trabecular meshwork is extremely clogged or has grown together, ophthalmologic surgery can be carried out by which the regulation of the intra-ocular circulation of the aqueous humor may be reactivated and based thereon substantially natural drainage via the trabecular meshwork into the Schlemm""s canal is realized.
This object and others which will become apparent hereinafter, are attained in accordance with the present invention by providing a tube-shaped probe for positioning in the anterior chamber in the direction of the trabecular meshwork which is operatively connected to an endoscope. Axially oriented within the probe is at least one tube-shaped working channel and a tube-shaped optical channel comprising at least one optical element for focusing on a viewing field and for transmitting images from a viewing field. An adjustable microsurgical tool which may be driven manually or by electric motor is disposed within the working channel in axial direction relative to the distal end of the tube-shaped probe. By means of the microsurgical tool at least one passageway can be made in the tissue of the trabecular meshwork such that a connection from the anterior chamber to Schlemm""s canal is realized and to thereby provide drainage of the aqueous humor via the trabecular meshwork into the Schlemm""s canal.

Device for improving drainage of the aqueous humor within the eye of a living being


A removable immersion cooling infrastructure module can have a form factor equivalent to that of one or more of the computing devices being cooled by immersion cooling, thereby enabling the immersion cooling infrastructure module to be installed and removed in the same simplified and efficient manner. Moreover, the quantity of immersion cooling infrastructure modules can be varied depending on need, since the immersion cooling infrastructure modules and computing devices can be interchangeable within the openings designed to house the computing devices. An immersion cooling infrastructure module can comprise a filter, a pump that can circulate the immersion cooling liquid through the filter, a power supply and a controller, with the module receiving power, and, optionally, communications and other like connectivity, from the same source as the computing devices.

Increasingly, computing functionality need not be supported by hardware that is physically co-located with a user utilizing such computing functionality, but rather can be supported by networked computing hardware aggregated into large data centers that are physically remote from the user. Often, the utilization of such computing functionality is referred to as "cloud computing" and can provide users with computing functionality that is typically supported by virtual machines hosted by large collections of computing hardware providing stability, redundancy, and high availability.
A modern data center represents a large financial investment, both in computing device hardware, and also in the hardware providing the relevant infrastructure systems for such computing devices. For example, data centers often comprise climate control hardware, redundant power systems, physical security, and other like infrastructure systems, in addition to the computing device hardware itself, which can comprise thousands of computing devices, storage devices, networking devices, and other like computing device hardware. Often, computing device hardware is housed in physical structures known as "racks".
Computing devices produce heat as a byproduct of performing computer processing. In datacenters, where many thousands of such computing devices can be co-located within a single space, the amount of heat generated can be very large, and can limit the quantity of processing performed. More specifically, the processors of the computing devices of a data center may not be able to operate at their highest computational throughput levels without exceeding the ability of the data center infrastructure hardware to properly remove the heat that would be generated in such instances. Since computing devices represent a sunk cost, then, to the extent that they can be utilized to perform greater processing, which can, in turn, be sold to consumers, the data center can become more profitable.
One mechanism for addressing the thermal challenges of operating high-performance computing devices, including in data center contexts, can be to immerse some or all of the computing devices into an immersion cooling liquid which can transfer heat more efficiently away from processors and other like heat-generating components of computing devices. Immersion cooling techniques can include two-phase immersion cooling, where the immersion cooling liquid transitions to a gaseous state at temperatures commonly reached by relevant computing components, such as central processing units, graphics processors and the like. The phase change between a liquid and gas, by the immersion cooling liquid, can absorb more heat, and can, thereby, more effectively transfer heat away from the heat-generating components of computing devices. In some instances, a two-phase immersion cooling system can transfer an order of magnitude or more heat away from heat-generating components of computing devices than traditional air-cooling mechanisms.
Unfortunately, immersion cooling mechanisms can be costly to implement. One source of increased cost can be the tank that can house the immersion cooling liquid and the computing devices cooled thereby. Such tanks can comprise pumps, filters and other like immersion cooling infrastructure, some of which can have limited reliability or a limited service life and can, therefore, require repair or replacement that can negatively impact the availability of the entire tank, rending the computing devices cooled thereby inoperable for extended periods of time. Because the repair or replacement of such immersion cooling infrastructure can take substantial time, tanks are typically provided with redundant immersion cooling infrastructure to avoid the aforementioned downtime but at an increased purchase and manufacturing cost.

Immersion cooling infrastructure module having compute device form factor