text:
|Publication number
|Publication type
|Application number
|Publication date
|Feb 23, 1999
|Filing date
|Apr 22, 1996
|Priority date
|Sep 16, 1992
|Fee status
|Also published as
|Publication number
|Steven R. J. Brueck, Saleem Zaidi, An-Shyang Chu
|Original Assignee
|The University Of New Mexico
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (9), Non-Patent Citations (2), Referenced by (50), Classifications (21), Legal Events (6)
|External Links: USPTO, USPTO Assignment, Espacenet
.Iadd.The U.S. Government has a paid-up license in this invention and the right in limited circumstances to require the patent owner to license others on reasonable terms as provided for by the terms of Contract No. 502-MC-91 with Semantech and Contract No. AFOSR F490-89-C-0028 with the Air Force Office of Scientific Research.
This application is a reissue of Ser. No. 07/945,776, now U.S. Pat. No. 5,415,835..Iaddend.
This invention relates to microelectronic circuits and more particularly to the use of interferometric patterning in optical lithography to produce complex, high density integrated circuit structures.
The miniaturization of integrated circuits has been underway ever since the first demonstration of an integrated circuit Using dynamic random access memory (DRAM) as a benchmark, current expectations of device generations, dates of peak production, and lithography critical dimension are: (4 Mb, 1994, 0.8 μm); (16 Mb, 1997, 0.5 μm); (64 Mb, 1999, 0.35 μμ); (256 Mb, 2003, 0.25 μm) and (1 Gb, 2006, 0.15 μm) projections from R. J. Kopp, Semiconductor International 15, 34-41 (1992)!. In the industry news section in the same issue of this trade magazine (page 11), there is a report of a MICROTECH 2000 workshop cosponsored by the National Advisory Committee on Semiconductors (NACS) and the Office of Science and Technology Policy (OSTP). The reported recommendation relative to lithography is: "An experimental lithography capability that can print features of 0.10 to 0.15 μm will be required by 1994 in sufficient volumes to allow essential process and manufacturing equipment development This need may require new electron-beam mask or direct wafer writing tools, or a capability in advanced X-Ray or phase-shift optical lithography. Research and development for several lithography alternatives will have to be supported for the next several few years to determine what system is best suited for production."
Imaging optical lithography, in which a mask image is projected onto a photoresist layer on the wafer, dominates today's manufacturing. Two equations describing the optical diffraction of the optical system determine the characteristics of the image. The minimum resolution, r, is proportional to the lens numerical aperture, or
and the depth of focus (DOF)
where 1 is the wavelength and NA the lens numerical aperture. These simple equations point out some of the difficulties in extending optical lithography to the extreme submicrometer regime, ie., about 0.1 μm or 100 nm. Refractive optics are available only up to approximately 200 nm at shorter wavelengths almost all materials become strongly absorptive and unusable. There are several efforts underway to use reflective optics at short wavelengths. However, there remain significant materials problems, particularly at X-Ray wavelengths and the NAs of these systems are significantly lower than for refractive systems, giving away some of the wavelength advantage for imaging small areas.
Considerable interest and attention have been given to new X-ray lenses based on grazing incidence filamentary propagation through hollow "waveguides." This remains a difficult problem without a demonstration of a high-efficiency, high numerical aperture, manufacturable lens with a field-of-view that can accommodate today's growing field sizes. From the experience of longer wavelength optical lithography using refractive lenses, the optical train can easily be the most complex and expensive part of a lithography tool.
The progression to short wavelengths to improve the minimum resolution carries a concomitant penalty in the reduction of the depth-of-focus (DOF). This has motivated efforts at multilayer resists with strong absorption layers, as well as efforts at improved planarization of circuits to eliminate topographic variations that would cause different parts of the circuit to image at different heights. This small DOF is a major concern for submicrometer lithography.
Briefly, major issues facing extension of conventional lithography to the extreme submicron regime (0.1 μm) include: source technology (issues are uniformity, spectral bandwidth, repeatability, reliability, etc.); the imaging system (again refractive optics become impossible below ˜200 nm and reflective optics have inherently smaller numerical apertures); the mask technology (there are significant issues related to vibration, heating and distortion in X-Ray masks which must be fabricated on pellicle substrates because of the strong X-Ray absorption of most materials); and the resist technology.
For many years periodic line and space gratings in the extreme submicron range have been fabricated by use of two interfering coherent beams. For two beams incident at angles θ and -θ to the surface normal, the period of the interference pattern is λ(2 sin θ). For readily available wavelengths (361-nm Ar-ion laser) and angles (θ˜75� ) this gives a period as small as 187 nm. The resulting grating pattern is a periodic line and space array; the critical dimensions of the lines are adjustable using nonlinearities in the expose and develop processes to roughly 1/3 of this dimension or 60 nm.
The present invention provides complex, two-dimensional patterns in integrated circuits through the use of multiple grating exposures on the same or different photoresist layers and the use of complex amplitude and phase masks in one or both of the beams of illuminating coherent radiation. ("Complex, two-dimensional patterns" as used herein means a pattern of multiple, interconnected and/or unconnected straight or curved lines or bodies spaced apart from each other. "Extreme submicron range" means distances of the order of 0.1 μm or 100 nm or less between lines.) Interferometric lithography may be combined with conventional lithography for the production of extreme submicrometer structures and the flexible interconnect technology necessary to produce useful structures. Generally, a critical dimension (CD) of the order of 60 nm with a pitch of 187 nm is obtainable through the process of the invention. Although with the use of a KrF excimer laser at 248 nm, a pitch of 124 nm and a CD of 41 nm can be attained. Further extension to a ArF excimer laser at 193 nm will proportionately reduce these dimensions. In general, as laser technology continues to evolve and results in shorter wavelength coherent sources, this technique can be adapted to produce still smaller structures.
In view of the close tolerances involved in producing patterns and microelectronic integrated circuits in accordance with the present invention, accurate alignment and position sensing is important. In that connection, the arrangements shown and described in Brueck et al, U.S. Pat. No. 4,987,461, and in Brueck et al. U.S. patent application Ser. No. 07/599,949, filed on Oct. 10, 1990, now U.S. Pat No. 5,343,292, may be used to particular advantage.
The photoresist exposure process of the invention takes advantage of the fact that, in terms of dimensional thicknesses of photoresists (typically 1-2 μm), there are no DOF limitations for the two interfering coherent optical beams. That is, for two interfering plane waves, there is no z or depth dependence of the pattern in the direction bisecting their propagation directions. For coherent optical beams, the depth of field dependence is set usually by the shorter of the beam cofocal parameter or, less usually, the laser coherence length. For larger laser spots the confocal parameter is many centimeters. For typical cw lasers, i.e. Ar-ion lasers at 361 nm, the laser coherence length is on the order of meters. The DOF of interferometric lithography is essentially unlimited on the micrometer scale of the thin-films employed in semiconductor manufacturing.
Another feature of the process in accordance with the invention involves the provision of large dimensions over which a sub-micron structure may be fabricated. Interferometrically defined gratings have long been available with dimensions up to 5�25 cm2 or larger, approximately a factor of 10 larger in linear dimension than the typical field sizes of today's integrated circuits. Further, this can be achieved at ultraviolet wavelengths for which photoresist is already well developed.
Reference is now made to the drawings in which like reference numerals refer to like parts and in which
FIGS. 1 and 2 are diagrammatic views of alternative versions of apparatus employed to carry out the process of the invention;
FIG. 3 is a scanning electron microscopic (SEM) view of an exposed and developed latent image in a photoresist from which patterns may be formed in a semiconductor wafer;
FIGS. 4-7 are SEM views of different complex two-dimensional patterns produced from the developed photoresist image in FIG. 3 in a semiconductor wafer depending on the kind of transfer process used;
FIGS. 8-14 are SEM views of other complex two-dimensional patterns fabricated in semiconductive material in accordance with the invention;
FIG. 15 is a view of a cross section of a phase-amplitude mask in accordance with an embodiment of the invention;
FIGS. 16-19 are schematic views of exposure stages illustrating the process of making an interdigitated or interleaved structure in accordance with an embodiment of the invention;
FIG. 20 is a SEM view of an interdigitated structure produced by the method outlined, and
FIG. 21 is an illustration of an embodiment of the invention when used in combination with conventional imaging lithography to produce a single, isolated line constituting the pattern.
Referring to FIGS. 1 and 2, a wafer 11 having a photosensitive layer 13 and substrate 14 is positioned on a movable table 15. The table 15 is supported on a shaft 17 and is arranged to be rotated and translated in two-dimensions respectively via controls 19 and 21 which control mechanical rotational and translational motion producing motors and linkages generally indicated by the numeral 23. The motors and linkages 23 and controls 19 and 21 need not be shown in detail since they are well known in the art and may be of any suitable well known construction.
Coherent optical beams 25 and 27 provided by any suitable well known source or sources are directed at a variable angle A from the vertical or system axis 29 toward each other and toward the photoresist layer 13 to form an interference pattern on the photosensitive layer 13. The arrangement shown in FIG. 2 is identical to that of FIG. 1 with the addition of a phase-amplitude mask 31 in the path of beam 25 or a phase-amplitude mask 33 in the path of both beams 25 and 27 in their interference region at the surface of the photosensitive layer 13, or both The beams 25 and 27 of coherent radiation may be lasers and may be provided in any suitable well known manner so that they are from the same source and are essentially equal in intensity at the wafer which assures a high contrast exposure.
In accordance with the invention the complex interference pattern produced on the photoresist layer or layers is varied by (a) rotating the wafer, (b) translating the wafer, (c) both rotating and translating the wafer, (d) changing the angle A, (e) varying the number of exposures, (f) varying the optical intensity. (g) using a phase/amplitude mask in one or both illuminating beams of coherent radiation, or (h) employing any combination of (a)-(g). Further flexibility is offered by a combination of any of (a)-(g) with conventional or imaging lithography techniques as are well known.
As an alternative method, first a single or multiple set of interferometric exposures are carried out in photosensitive layer. The subsequent pattern is then developed and transferred to a semiconductor substrate by any of the well known commercially available techniques. This substrate is then again recoated with a photoresistive layer, and single or multiple exposure processes can be repeated with the aid of the alignment position sensing arrangement described in Brueck, et al. in U.S. Pat No. 4,987,461.
Referring to FIG. 3, the image depicted is a rectilinear array of circular dots on the photosensitive layer about 300 nm apart from each other in the x and y axes. The photoresist layer is developed and transferred into the Si sample by a plasma-etch process. The interiors of the circles are etched into the Si. A potentially very large scale application of structures such as this is in the fabrication of field-emission flat panel displays which require large fields (up to large-screen television size or greater) of submicrometer field emitter tips. This lithography is preferably be carried out on glass plates which are much less polished than today's Si wafers.
In accordance with the invention, the image of FIG. 3 is produced on the photosensitive layer 13 by two exposures of the layer to an interference pattern produced by the two coherent optical beams 25 and 27 as follows: With a wavelength of 488 nm for each laser beam 25 and 27 and angle A=50 degrees, the photosensitive layer is subjected to a first exposure with the period of the interference pattern being 0.3 microns and a second exposure with the same period and other parameters but with the wafer rotated 90 degrees about the axis 29. The length of each exposure depends upon the nature of the photoresist and the optical wavelength and intensity and, as an illustration, for a photoresist comprising KTI 1350, is about 60 seconds.
The pattern shown in FIG. 3 may then be transformed into the grating structure shown in FIGS. 4-7 by any of several well known processes as follows: FIG. 4--by plasma etching into silicon; FIG. 5--by reactive ion etching into GaAs; FIG. 6--by wet chemical etching into silicon, and FIG. 7--by ion beam milling into silicon.
Turning to FIGS. 8-14, the patterns shown therein are produced by plasma etching from photoresists having complex images thereon produced by the imaging scheme of the present invention as indicated in the following table 1:
TABLE 1______________________________________ Period Rotation Beam AngleFIG Exposure (mm) (deg) (deg)______________________________________8 First 1.0 micron 0-deg 14-deg Second 2.0 0-deg 7-deg Third 1.0 90-deg 14-deg Fourth 2.0 90-deg 7-deg9 First 1.0 micron 0-deg 14-deg Second 1.5 0-deg 9.4-deg Third 1.0 90-deg 14-deg Fourth 1.5 90-deg 9.4-deg10 First 0.6 micron 0-deg 24-deg Second 0.7 0-deg 20.4-deg Third 0.8 0-deg 17.8-deg Fourth 0.6 90-deg 24-deg Fifth 0.7 90-deg 20.4-deg Sixth 0.8 90-deg 17.8-deg11 First 0.95 micron 0-deg 15-deg Second 1.0 0-deg 14-deg Third 0.95 90-deg 15-deg Fourth 1.0 85-deg 14-deg12 First 0.95 0-deg 15-deg Second 1.0 5-deg 14-deg Third 0.95 90-deg 15-deg Fourth 1.0 85-deg 14-deg13 First 0.95 micron 0-deg 15-deg Second 1.0 5-deg 14-deg Third 0.95 90-deg 15-deg Fourth 1.0 90-deg 14-deg14 First 0.95 micron 0-deg 15-deg Second 1.0 0-deg0 14-deg Third 0.95 90-deg 15-deg Fourth 1.0 90-deg 14-deg______________________________________
It is clear from the images produced in connection with FIGS. 3 thru 14 that, in accordance with the invention, many other complex patterns may be produced in the manner described. The examples discussed in connection with FIGS. 3-14 by no means exhaust the rich array of possibilities of patterns including those required for highly repetitive integrated circuit elements such as DRAMs Of course, for these applications an aperiodic wiring pattern must ultimately be superimposed on this structure in any suitable well-known manner. For DRAMS even the interconnection patter is highly regular since these circuits are usually addressed in a matrix fashion. Only at the periphery of the DRAM region do highly aperiodic patterns occur.
It is understood that in accordance with the invention a very wide range of structures that can be fabricated. The aerial image for each exposure is simply a sine function:
I(x)=A{1+sin (qx+φ)} (1)
where the amplitude A, period 2p/q and phase f are set by the incident optical beams. Nolinearities in the exposure, develop and etch processes result in a higher-order terms in a Fourier series expansion at the same period and phase as the original image. That is:
S(x)=ΣA.sub.n sin (nqx+φ) (2)
where S(x) is the resulting pattern on the wafer and the coefficients An are the result of these nonlinear processes. Most often, the An will be a monotonically decreasing function of n. Finally, with multiple exposures the result for the pattern is:
S(r)=ΣΣA.sub.nm sin (nq.sub.m �r+φ.sub.m).(3)
This is a two-dimensional Fourier transform, and thus, in accordance with the invention, any pattern definable by the transform can be synthesized. As a practical matter, this is restricted in the range of |9m| to 4π/2 and, of course, there is no independent control of each Anm. Nevertheless, the transform provides the basic rule giving rise to the very large variety of patterns that may be realized through patterning in accordance with the principles of the invention.
Additional flexibility in pattern generation may be introduced through the use of amplitude and/or phase masks for one or both of the exposure beams. Phase/amplitude masks may take any desired form depending on the desired pattern. The mask 41 shown in FIG. 15 has two thickness-varied (i.e., path length-varied on the scale of the frequency of the coherent beam radiation), phase modification sections 43 and 45 and two amplitude or shadow or stenciled sections 47 and 49. Of course, a mask need only have phase or amplitude portions or both.
An example of patterning employing a mask is provided in the highly useful, interleaved or interdigitated structure shown in the embodiment of the invention of FIGS. 16-19. The end result pattern shown in FIG. 19 is produced by first exposing a 1-μm pitch grating over the entire area of the photoresist to produce the exposed photoresist image pattern shown in FIG. 167. Next, two sequential exposures are made through a simple shadow mask (e.g., a mask such as is shown in FIG. 15 with either shadow portion 47 or 49) at twice the pitch (2 μm) over the top and bottom halves of the wafer as shown in FIGS. 17 and 18.
The wafer is then translated by 1 μm between these two later exposures so that alternate lines of the original grating are eliminated above and below the pattern to produce the pattern shown in FIG. 19.
The structure shown in the SEM of FIG. 20 was fabricated by the foregoing process. The following Table II shows the steps taken to produce the image shown in FIG. 20. In this case, the image in the photosensitive layer 13 is essentially the same as the image produced by plasma etching, and in producing the image, the wafer was not rotated about axis 29 and instead was translated and apertures were located in the position 33 as shown in FIG. 2.
TABLE II______________________________________ Beam Period Translation Angle ApertureFIG No. Exp (μm) (μm) (deg.) location______________________________________20 first 1.0 0.0 14 none second 2.0 0.0 7 top third 2.0 1.0 7 bottom______________________________________
Such an interdigitated structure with submicrometer spaces of about 100 nm between the fingers has application. for example, as a large area submicrometer particle detector by fabricating an interdigitated metal grid structure and monitoring the conductivity induced by small numbers of particles shorting out the fingers.
Except for the arrangement of the present invention, no other technique exists that can be used to economically fabricate these interleaved structures over very large areas with extreme sub-micrometer dimensions. These structures are also useful for high-speed optical detectors where the transit times across the sub-micrometer gap determines the detector speed. Indeed, this interdigitated structure is commonly used for a wide array of sensors. The capability provided by interferometric lithography of the present invention will enhance the functionality of many of these devices.
Reference is now made to FIG. 21 which shows an embodiment of the invention used in combination with conventional lithography. In general, the combining of the interferometric lithography of the present invention with conventional imaging lithography adds other possibilities to the structures that may be fabricated. As one example, FIG. 21 illustrates the fabrication of an isolated line with a submicrometer critical dimension (CD) using a relatively coarse pitch (say 1-2 μm) grating structure and isolating a single line with a box defined by conventional lithography. Specifically, as shown in the figure, a grating 51 is exposed on the photosensitive layer using a 1 μm pitch. The next exposure is made via a mask to provide a 1.5 μm wide box 53 which masks out the other lines of the grating. The end result is the desired single line 55 which will result after appropriate fabrication such as plasma etching.
Single lines have immediate use, for example, as the gate structure in high-speed field-effect transistors (FET). Commercial devices currently have gate dimensions of ˜0.25 μm, fabricated by c-beam lithography. Laboratory research devices have been made with gates as small as 5 nm using focused ion-beam lithography. Both of these are serial processes in which each gate must be written sequentially resulting in low throughput and yield. The present invention offers the possibility of parallel writing of submicrometer gates throughout a large field of view circuit or set of circuits, very much as integrated circuits are conventionally fabricated. This will result in dramatically reduced manufacturing cost and improved yield.
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|U.S. Classification
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|International Classification
|Cooperative Classification
|European Classification
|Dec 18, 1997
Owner name: NEW MEXICO, UNIVERSITY OF, NEW MEXICO
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|Feb 23, 1999
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Year of fee payment: 4
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Owner name: SCIENCE & TECHNOLOGY CORPORATION, NEW MEXICO
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|Aug 24, 2006
|Fee payment
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text:
- Mohandas Karamchand Gandhi
Happy 1st of the Month. Bone Thugz Style! Old school, son.
Advertising from MySpace...
Apparently, I'm smarter than Obama by a whopping 12 points. THE PRESIDENCY SHOULD BE MINE. Ironically, I'd have a better platform than whatever the fuck he's running with this week... Only problem is a) people tend to not vote for single presidents anymore; b) people tend to not vote for presidents with facial hair anymore; c) people have photographic proof of my wang out there. shit. Not that it'd really put my campaign in the negative so much. I haven't gotten any complaints so far. Hell, it may give me the boost I need among female and gay voters.
Today, the parents bought me/ordered some new photography equipment and a streamlined point-and-shoot, the Nikon Coolpix S-550. Not for serious shooting, of course... just everyday things. It's pretty damn small but easy to operate. Very crisp photos too. I also put in an order for the AF NIKKOR 50mm f/1.4D. I don't know why I don't have it already as it's been a mainstay for all Nikon cameras since the mid-80s. Better to have a new model anyways. Still a ways from purchasing soft boxes and whatnot for studio crap... Anywho, they were very nice belated birthday gifts from them.
All I gotta do now is SHOOT SOME MORE. Cripes. I've fallen in a rather bad rut lately...
Lately I've been having some real wacky dreams lately involving close friends of mine. Some surreal. Others introspective and archetypal. Few sexual. By "sexual" I mean me being a beast. It's good to know that I'm rocking somebody's (dream) world. What was the weirdest or most surrealistic dream you've ever had?
Normally, I don't do this but damn if this isn't near perfect. Not to mention capable of giving me a dorkgasm. heh Check out Tez's latest, hAhAhA right HERE... especially if you're a fan of comics.
And big boobs.
And greasepaint.
And the color green.
Lastly, there's THIS SUMBITCH. I'm glad this series has found it's groove again like Stella.
So yep.
That's all (for now).
Where was SHE during my birthday?!

subset: commoncrawl


text:
In honor of Children's Book Week, here's a word art freebie based on the Mary McLeod Bethune quote: "The whole world opened to me when I learned to read."
To download word art (without watermark), click here, then right click on the image and choose "Save Picture As . . ."
For lots of literature-based activities for young children, see my post at Living Montessori Now: Montessori-Inspired Literature-Based Activities for Preschoolers.
Happy Children's Book Week!
Note: I have lots of word-art inspiration at the Raising Figure Skaters Facebook page and on Pinterest!
Photo Credit: Background image by Dmytro Tolokonov.
Linked to The Mommy Club Resources and Solutions at Milk and Cuddles and Crystal & Co. and Saturday Show & Tell.


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Dr. Mark Sanders is back, and this time he addresses one of the most common motocross injuries: clavicle fractures. Take it away, Dr. Mark…
Among one of the most common MX injuries I see is a fractured clavicle. And while I once felt that the vast majority of fractured clavicles should be treated nonsurgically — with any residual bump serving as a riders "mark of honor — today we address it more aggressively. For an action sport athlete, equal distribution on the bike is as essential as the balanced strength of his key muscle groups. If a serious clavicular fracture is not repaired with the right procedure, the athlete risks losing optimal shoulder and arm function on one side — compromising the entire upper body and overall performance.
The biology of the clavicle is different from all of the other long bones and enables it to heal more rapidly and reliably. We assist in this healing of less severe fractures by putting the athlete in a sling for the first five to seven days. They can then begin moving their shoulder – working towards trying to lift it over their head and improve range of motion. The disturbing clicking sounds, some very pronounced, generally persist for about a month. They are normal and will not affect the exercises or recovery.
At four weeks or when the clicking, or popping, sounds subside; they can begin lifting lightweight objects — such as an unopened soda can — to build strength. Heavier weight can be added as comfort allows. Younger patients are back at their sport by six weeks, while older patients require more time — usually three months.
It is important to understand that the clinical healing will generally occur in advance of the x-ray healing and surgery is not always necessary. The x-ray will eventually match clinical results, though a bump will always remain – surgery or not. Surgical treatment exchanges a bump for a scar, provided no complications occur.
When there is a severe displacement of the fracture – threatening to poke through the skin, or multiple fractures in the extremity, nerve injury, multiple rib fractures or a fracture close to the end of the clavicle – surgical treatment is performed with a pre-contoured and locked plate and screws.
About Dr. Mark Sanders and the Sanders Clinic for Orthopaedic Surgery and Sports Medicine:
Known as the MX doctor, Dr. Mark Sanders is an orthopaedic surgeon and sports medicine doctor with over 20 years of experience — who has helped both MX and BMX professionals get back in the race with his unconventional approach to injuries and accelerated rehabilitation programs. He and his certified fitness trainers know an athlete isn't going to let an injury keep him from his sport, so he provides treatment options and strengthening programs designed to keep them strong and in the race — which is why athletes from across the United States seek treatment at Sanders Clinic.
Dr. Sanders is the moderator for a number of health and fitness forums and has been listed among H Texas Magazine's Top Docs for the past two years. He was recently featured in the 2006 edition of Medicine Men of Texas — a book spotlighting outstanding physicians and the impact their work has had on patients.
Visit www.sandersclinic.net for more info.


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Nashville Airport Marriott
The Nashville Airport Marriott is the official UTOPiAcon partner hotel and the location of the 2017 convention. If you want to be where all the action is, this is the place to stay.
We have group rate pf $159 a night for a room with a king or two double beds.
–> Complimentary Guest Room Internet for all attendees who are Marriott Rewards Members (free of charge to sign up).
To make your reservation online, click here: http://bit.ly/hotel2017
To MANUALLY add on Wednesday or Sunday nights to your trip, use this link: http://bit.ly/utopia2017hotel.
By Telephone: Call Marriott reservations at 1 (800) 228-9290 or (615) 889-9300.
All reservations must be accompanied by a first night room deposit or guaranteed with a major credit card.
- Complimentary on-site parking
- Blink Electric Charging Stations available, but require a Blink Card to activate charging, which includes a fee.
Nashville International Airport – BNA
Hotel direction: 4 miles NW
- Airport shuttle service, scheduled, complimentary
- Courtesy phone available
All packages should be shipped and INDIVIDUALLY labeled to the hotel as
Nashville Airport Marriott
UTOPiA 2017
Attention: (Registered Guest Name with Check In Date)
600 Marriott Drive
Nashville, TN 37214
Multiple boxes/containers should each be marked as follows:
"(box number) of (total number shipped)". For example: Box 1 of 4, Box 2 of 4
Shipping Policies:
- All packages sent should be labeled as listed above.
- The hotel will accept shipments only the preceding three (3) days before the event. Shipments received earlier than three (3) days before the event will be assessed a $25.00 per day storage fee.
- Hotel will provide delivery to the event location on the date of setup. Group Representatives/Exhibitors are responsible for all unpacking and setup of exhibit items.
- At the conclusion of the show the Group Representatives/Exhibitors will be responsible for all dismantling, repacking and sealing of outbound shipments.
- All outbound shipments will require completed shipping documents, including billing account numbers. Hotel will provide pickup from your event location and secure in our receiving department for pickup by designated shipping vendor.
Incoming Shipping Charges:
(Charge includes receiving, storage, handling and outbound shipping)
Express Packs/Envelopes: Complimentary
Box/Container under 25 pounds: $ 5.00 each
Box/Container 25 pounds or more: $10.00 each
Pallets/Freight Items: $50.00 each
• All package charges for individual guests/exhibitors registered with the hotel will be placed on the guest room folio.
• All other package charges will be placed on the group master account.


text: Ok, now I've got everybody's attention (maybe) HMHB are in town tonite at the Empire. Tickets still available when I last checked an hour ago. They don't play Cov very often, in fact they don't play very often at all. Get yerselves down there for some much needed witty, sardonic and all round scathing comment. With guitars. I've heard there's a door policy in force mind - Non admittance to brown anoraks and a professed knowledge of where shit is at B&Q.


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United States of America, Plaintiff-appellee, v. David Edward Ritchey, Defendant-appellant, 423 F.2d 685 (9th Cir. 1970)Annotate this Case
February 17, 1970
David E. Ritchey (argued), John J. Sullivan, of Sullivan, Redman & Winsor, Seattle, Wash., for defendant-appellant.
J. Byron Holcomb (argued), Asst. U. S. Atty., Stan Pitkin, U. S. Atty., Seattle, Wash., for plaintiff-appellee.
Before DUNIWAY, WRIGHT and TRASK, Circuit Judges.
DUNIWAY, Circuit Judge.
Ritchey was convicted of refusing to report for and submit to induction into the Armed Forces of the United States in violation of 50 U.S.C.App. § 462(a). We affirm.
Ritchey was classified 1-A by his local board on January 17, 1967. He does not attack the validity of this classification. On July 14, 1967 he received an order to report for induction directing him to report on August 8, 1967. He appeared at the induction center on that date, but the induction process was not completed at that time. Ritchey received a subsequent notice from his draft board on September 1, 1967 telling him to report to complete his induction on October 17, 1967. Ritchey did not report at the induction center on that date. He notified the draft board that he had been out of the area at the time and unable to comply. Ritchey received another notice to report from his draft board on January 9, 1968, directing him to report on January 22, 1968. He did so, and again did not complete the induction process. Ritchey received a final letter from his draft board on March 20, 1968 ordering him to report at the induction center on April 9, 1968. Ritchey did not report on that date, and this is the basis for his indictment.
Ritchey alleges two errors in his bid for reversal.
1. Validity of the order to report.
Ritchey argues that his original order to report for induction was not valid because his draft board did not meet to authorize and direct the issuance of the order. This allegation is presented as the following two questions: A. Can the chairman of the draft board lawfully sign an Order to Report for Induction without specific authorization and direction from the draft board? B. Can the clerk of the board lawfully fix the date of induction without specific authorization and direction from the draft board? The short answer in this circuit is, yes. United States v. Bowen, 9 Cir., 1969, 423 F.2d 266; United States v. Hulphers, 9 Cir., 1969, 421 F.2d 1291; Rusk v. United States, 9 Cir., 1969, 419 F.2d 133. Cf. United States v. Stark, 9 Cir., 1969, 418 F.2d 901.
2. Validity of postponements of induction.
Ritchey argues that he cannot be indicted for failing to report on April 9, 1968 because the "postponements" he received were not legally valid as they were signed by the clerk of the board, and there was no meeting of the board to consider them.
We find no error. Ritchey has not shown any harm to himself through the delay. Nor were the delays "postponements" as described by 32 C.F.R. § 1632.2(a). That regulation describes delays granted at the request of the registrant in cases of extreme emergency, e.g., the death or illness of a close relative. In this case all the delays were at the request of the service. On August 6, 1967 the authorities at the induction center determined that Ritchey should have a psychiatric consultation. Again on January 22, 1968 Ritchey was unable to complete induction because a "civil hold" was placed on him by the induction administrators. (The civil hold is related to investigation of criminal offenses.) Moreover, the clerk could have signed the notice of induction without a formal board meeting. (See cases cited supra.) A fortiori, she could sign the subsequent letters assigning new dates upon which Ritchey could complete his induction process. We agree with the government that it was all one induction process.


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Manager Commentary
September 2017
Structured Credit Pioneer Palmer Square Capital Management Closes 6th CLO Transaction in 2017
July 2016
Where's the Beef?
June 2016
Brexit: Effect on the High Yield and CLO Credit Markets
October 7, 2015
Credit deterioration affecting 2.0 CLOs
October 2015
State of the Credit Markets: "Relative Value Opportunity in Credit Has Increased For the Discerning Investor"
September 2015
Investment Opportunity - Stressed Credit?
June 2015
Palmer Square Q2 2015 Conference Call
June 2012
Investing in Today's Environment – Are CLOs an Attractive Credit Investment?
June 2012
Convertible Bond Arbitrage (unlevered)
An Attractive All-Weather Strategy which Seeks to Provide a Source of Alternative Income and Non-Correlated Returns
November 2011
Investing in Today's Markets – Is Opportunistic Credit Becoming Increasingly Attractive?
The views expressed are those of the author at the time created. They do not necessarily reflect the views of other persons in the Palmer Square organization. These views are subject to change at any time based on market and other conditions, and Palmer Square disclaims any responsibility to update such views. No forecasts can be guaranteed. These views may not be relied upon as investment advice or as an indication of trading intent on behalf of any Palmer Square portfolio.


text: Le Wednesday 03 December 2008 13:34:06 Lucas Nussbaum, vous avez écrit : > That's not true. We imposed that reviewing step to ourselves, and, if > it's doing more harm (by slowing down development and annoying > contributors) than good (by detecting mistakes and improving Debian's > overall quality), we could simply decide to drop it. (or to drop it > partially, for some categories of uploads). > > It's funny how in Debian, we always prefer to add more checks (which > always let some things get thought while they shouldn't) rather than > trusting developers to do the right thing. It's similar to what happened > to the NM process. Although it adds some lag, I strongly believe it detects a lot of mistakes and it still has its interest. The mistakes they detected from my packages really needed to be fixed. I thank the ftp-masters for detecting them. And wait for the delay. Yes, sometimes their decisions are questionable, but the overall interest of the NEW queue shouldn't be an issue. And I don't think I am really worse than the average packaging quality Romain


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Peggy's long-time interest in the history and significance of signature quilts in the lives of our foremothers has led her to collect a wide variety of these quilts and to research their origins. Also known as friendship quilts, I believe the earliest one in her collection dated to the mid 1850s. She graciously allowed me to share some of my photographs of her quilts here. I was so busy trying to capture images of these quilts that I didn't take notes of her comments regarding individual quilts, so without further ado, enjoy the beauty and occasional humor of these wonderful examples.
A beautiful embroidered example, and my very favorite block (of course!) shown below.
Peggy made available a handout containing books and articles about signature quilts. Among these are two books by Linda Otto Lipsett that are in my collection: Remember Me, Women & Their Friendship Quilts and Pieced from Ellen's Quilt. Both are excellent reads for anyone who loves the history of early quilts. A third book also by Linda Otto Lipsett that also contains several friendship quilts, along with patterns for some of them, is To Love & To Cherish: Brides Remembered.
We all enjoyed a delightful afternoon surrounded by these quilted treasures. You can see a gallery of Peggy's quilts as well as patterns she has available and her workshops by visiting Yellow House Quilter.


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Speaking & Consulting
Scott Williams Speaking Reel from Nxt Level Solutions on Vimeo.
Upcoming Events:
No shows booked at the moment.
Scott is available for speaking and consulting on a limited basis. He has the unique ability to connect with a broadly diverse audience. Scott's consulting areas of expertise include but are not limited to:
- Leadership Development
- Executive Coaching
- Brand Architecture and Positioning
- Community Engagement
- Culture Alignment
- Social Media Strategy
- Live Streaming
- Campus Pastor Development
- Diversity Training and Consulting
- Multi-site Church and Church Growth
- Systems and Strategy
If you are interested in having Scott speak or provide consulting for your organization please take a few moments to fill out the information below.
Thanks in advance for your interest.


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"Abandon hope all ye who enter here." Dante, our young, naive hero, has woken from a deep sleep to find himself in a cold, dark wood. Before he can begin to work out where he is, his path is blocked by a leopard, a lion, and a she-wolf. Things get worse from there, and our pilgrim finds himself on a journey through the very depths of hell.
Why is he there, and will he ever make it out alive? During his journey Dante meets the worst sinners imaginable and witnesses how God punishes them. Although they writhe and wail in tortured agony, he must remain strong, for he has to make it through or he may find himself lost in this dismal place forever.
Who will Dante meet on his journey, and what will he learn?
This first Italian classic from Real Reads is our wonderfully retold version of the first part of Dante's great epic, told in prose and terza rima by Isabel Coe.
©2012 Isabel Coe (P)2012 Isabel Coe
"Great Story, Great Narrator. Too short."
Narrator was excellent. I've always loved this story. First heard about the book from playing the PS3 game as a teenager. I'm a fanatic of mythology, especially Greek. The only issue that I have is how short the story was. It really didn't touch on the Beatrice part of the story. I have never read the original, which I think is written in Italian and a lot harder to understand nowadays. I quickly checked out the original versions sales page. It looks as though it would be a lot longer and there is no audible version. I recommend this audiobook. Just know that it doesn't seem to cover much. I think based on the 42 minutes or so that even a price of 4 bucks is kind of high. I think 1.99 would be more appropriate. But this book is a classic and they made it more understandable. This probably has something to do with the higher price.
Report Inappropriate Content
If you find this review inappropriate and think it should be removed from our site, let us know. This report will be reviewed by Audible and we will take appropriate action.


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About This Activity
This course is especially for singers or instrumentalists who know basic notation and wish to become more fluid at reading music they wish to explore or prepare to perform. But all who wish to better understand languages of music and how to read them are welcome. When reading verbal language we expect to not only translate symbols for letters and words, but to immediately interact with verbal meaning that these symbols can convey. Our goal in this course is similar: to develop skills at reading musical notation in ways that immediately go beyond translating notational symbols simply into sounds, but instead reach for higher structures of musical meaning. We will read music of different historical periods and of different composers to develop capabilities in understanding how musical languages work and how they may be read. Practice at home is expected of those who wish to improve their reading fluidity, there will be group reading, and opportunities for individual reading work in class for those who wish it.
Offered as credits of private instruction. If you have any questions regarding this class please contact the NEC Continuing Education office at (617)585-1701.
Organizer Info
New England Conservatory of Music Preparatory School and School of Continuing Education


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Red Sox fans know a lot about America's pastime, but they also know a few things about the wonderful world of beer — namely, that it's never too early to have a local frosty one.
Former Sox first baseman Kevin Millar (of Jack Daniel's fame?) tweeted out a photo on Friday morning around 9:45 a.m. ET of a tour of Boston's Sam Adams Brewery, where he claims he is "working hard today in beantown!" adding: #ilive4this.
Check out the photo below of Millar cowboying up at Jim Koch's creation station.
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Welcome to Baptist Board, a friendly forum to discuss the Baptist Faith in a friendly surrounding.
Your voice is missing! You will need to register to get access to all the features that our community has to offer.
We hope to see you as a part of our community soon and God Bless!
Eating Red Meat May Shorten Life Span
Discussion in 'News & Current Events' started by Marcia, Mar 24, 2009.
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Welcome to Baptist Board, a friendly forum to discuss the Baptist Faith in a friendly surrounding.
Your voice is missing! You will need to register to get access to all the features that our community has to offer.
We hope to see you as a part of our community soon and God Bless!
Global warming? Not so fast....
Discussion in 'News & Current Events' started by LadyEagle, Jun 22, 2012.


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MIM performance
We had a great performance at the Musical Instrument Museum tonight! We'll be doing some more post performance posts but I just wanted to do a quick one to say thank you to the great staff at MIM! The food was great the museum was amazing and the theater was beautiful. We felt very well taken care of! I also wanted to give a shout out to the Fushicho Daiko and Odaiko Sonora members who helped us load out and took us out to post performance drinks! Taiko people rock!
Tags: Fushicho Daiko, MIM, Musical Instrument Museum, Odaiko Sonora


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Hotel Oostereiland, Warder
Based on 41 Reviews
Hotel Oostereiland Overview
Hotel Oostereiland is a renovated prison building, boasting a unique Markermeer lake-side location. It offers rooms, some set in the former jailcells, with free Wi-Fi and private bathrooms.
Hotel facilities
- Breakfast service
- Check-in time starts 2:00 PM
- Check-out by 11:00 AM
- Complimentary newspapers in lobby
- Elevator/lift
- Garden
- Gift shop
- Internet access - wireless
- Luggage storage
- One meeting/conference room
- Terrace
Room facilities
- Complimentary toiletries
- Desk
- LCD television
- Patio
- Private bathroom
- Shower/bathtub combination
Customer Reviews
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206 East Indiana Avenue, Coeur D Alene, ID 83814Request info Add to list
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Craig H.
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Building Details:
• Year Built: 1978
206 East Indiana Avenue is an office property for lease in Coeur D Alene, ID.
Quality Multi-tenant office building in downtown Coeur d'Alene. Suite sizes range from 810 square feet to 1,600 square feet. Off street parking available. Very well cared for project. Near the Kootenai County District Court House.
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