text:
|Publication number
|Publication type
|Application number
|Publication date
|Nov 19, 1985
|Filing date
|Sep 30, 1982
|Priority date
|Jan 26, 1977
|Fee status
|Publication number
|Tsiu C. Chan, Chao Mai, Myint Hswe
|Original Assignee
|Mostek Corporation
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (8), Referenced by (22), Classifications (35), Legal Events (11)
|External Links: USPTO, USPTO Assignment, Espacenet
This is a division of application Ser. No. 351,726 filed Feb. 24, 1982, now abandoned, which is a continuation of application Ser. No. 100,606, filed Dec. 5, 1979, now abandoned, which is a division of application Ser. No. 002,426 filed Jan. 10, 1979, now abandoned, which is a continuation of application Ser. No. 762,398 filed Jan. 26, 1977, now abandoned.
The present invention relates generally to semiconductor devices, and more particularly to field-effect elements such as field-effect transistors (FET) and memory cells for use in random-access memory (RAM) integrated circuits.
The integrated circuit art strives for improvements in processing techniques for reducing the size of circuit elements and improving device yields. The present invention is directed to a number of related problems inherently involved in making high density RAMs.
In particular, it has been found that the formation of thick field oxide layers in selected areas of a substrate using prior art isoplanar techniques causes the undesirable transportation of silicon nitride into portions of the substrate from silicon nitride layers used to delineate the field oxide growth. The present invention provides steps which alleviate such nitride contamination of the substrate.
An aspect of prior art processes which limits the number of elements per unit area on a semiconductor chip is the use of deposited oxide as a mask for etching underlying layers. Deposited oxide tends to be lumpy and uneven in thickness, which hinders precise mask formation thereby affecting tolerances and limiting element density. The present invention overcomes the limitations of deposited oxide masks.
Additionally, a troublesome prior art problem solved by the present invention is lateral etching of oxide layers under polycrystalline silicon gate layers incident to opening diffusion windows to the device substrate. The resulting oxide undercut of such gate layers can cause device failure by a short circuit between a gate layer and the substrate. Prior art methods of depositing oxide to fill in the undercut have proved to be unreliable.
Another troublesome prior art problem solved by the present invention is extensive lateral etching of stabilization layer oxides incident to opening contact windows in devices which employ such stabilization layers. It has been a practice in the prior art to deposit a relatively thick layer of doped oxide over a relatively thin layer of essentially undoped thermally grown oxide for the known purpose of preventing contaminants such as sodium from migrating into the substrate. When contact windows are subsequently opened by etching through a photoresist mask, the doped oxide (i.e., the stabilization layer) etches laterally under the mask by a substantial amount by virtue of the disparity in etch rates of doped deposited oxide and undoped grown oxide. Doped deposited oxide (particularly the "low temperature" variety deposited at about 400� C.) typically etches about ten times as fast as undoped grown oxide. Since the etch duration must be long enough to penetrate through the underlying grown oxide layer, the amount of lateral etch of the doped deposited oxide under the mask is typically somewhat greater than ten times the thickness of the undoped grown oxide. It will be appreciated tha whatever amount of planned overetching is included in the duration aggravates this problem. Clearly, the element density per unit of chip area is adversely affected by such extensive lateral etching. Process steps are provided in the present invention which substantially eliminate this problem.
In accordance with the present invention, a method for making a semiconductor device is disclosed in which various types of field-effect elements may be formed simultaneously by a sequence of process steps which may be advantageously applied in making high element density integrated circuits.
In accordance with an important embodiment, two basic field-effect elements (a memory cell and a field-effect transistor) are illustrated in juxtaposition in various sequential stages in a process for making an integrated circuit device of the invention.
In accordance with an important feature of the invention, a method for preparing a substrate surface of a semiconductor device is disclosed which comprises: defining an active area in the substrate, growing a thin oxide layer in the active area to a thickness sufficient to remove substrate surface damage, and removing the thin oxide layer to provide a clean substrate surface in the active area.
In accordance with another important feature of the invention, a method for forming layers of polycrystalline silicon (hereinafter referred to as polysilicon) in precise patterns and locations over a semiconductor substrate is disclosed which comprises: partially oxidizing a polysilicon layer, and removing portions of the resulting polyoxide layer to form a mask for etching the underlying polysilicon layer. The term "polyoxide" is used herein to describe the material formed by the oxidation of polysilicon.
In accordance with another important feature of the invention, a method for making a semiconductor device is disclosed which comprises: using a polysilicon layer as a mask for etching an underlying oxide layer to expose a substrate surface portion, diffusing dopants into the substrate, and exposing the device to an oxidizing ambient to fill in undercut portions of the oxide layer incidentally caused by lateral etching thereof under peripheral edges of the polysilicon layer.
In accordance with another important feature of the invention, a method for forming very small contacts in an integrated circuit device is disclosed which comprises: opening contact windows in undoped oxide layers prior to stabilizing the device surfaces, thereby minimizing the lateral etching problem of the prior art.
The novel features believed characteristic of the invention are set forth in the appended claims. The nature of the invention, however, as well as its essential features and advantages, may be understood more fully upon consideration of an illustrative embodiment, when read in conjunction with the accompanying drawings, wherein:
FIGS. 1-20 are schematic sectional views illustrating portions of an integrated circuit device of the present invention at various stages in a process for making the device;
FIG. 21 is an enlarged view of a representative portion of FIG. 20;
FIG. 22 is a schematic sectional view illustrating a succeeding step in the process;
FIG. 23 is an enlarged view of a representative portion of FIG. 22;
FIGS. 24 and 25 are schematic sectional views illustrating succeeding steps in the process;
FIG. 26 is an enlarged view of a representative portion of FIG. 25;
FIG. 27 is a schematic sectional view illustrating a succeeding step in the process;
FIG. 28 is an enlarged view of a representative portion of FIG. 27;
FIG. 29 is an enlarged view similar to the view of FIG. 28 illustrating a succeeding step in the process; and
FIG. 30 is a schematic sectional view illustrating important features of the device at a final stage in the process.
Referring to FIG. 1 there is shown a schematic cross-section of a portion of an integrated circuit device of the present invention, indicated generally by the reference numeral 10, at an early stage in a manufacturing process. The device 10 comprises a substrate 12 which is typically monocrystalline silicon of a conventional crystal orientation known in the art. Many features of the present invention are applicable to devices employing semiconductor materials other than silicon as will be appreciated by those skilled in the art. The substrate 12 maybe either P-type or N-type; however, for purposes of this illustrative embodiment, P-type conductivity is employed, a preferred resistivity being about 5 to 25 ohm-cm in the substrate 12. Thermally grown on top surface 14 of the substrate 12 is a silicon dioxide layer 16, having a preferred thickness of about 600 Angstroms. A silicon nitride layer 18, having a preferred thickness of about 600 Angstroms, is deposited on thermal oxide layer 16 in a reactor in a known manner. A top layer 20 of polysilicon having a thickness of about 1000 Angstroms is deposited on nitride layer 18 using known deposition techniques.
The device 10 is then exposed to an oxidizing ambient preferably in steam between about 900� C. to 1000� C. for a sufficient period of time to completely oxidize the polysilicon layer 20 of FIG. 1, thereby producing a polyoxide layer 22 as shown in FIG. 2. The polyoxide layer 22 is about 2000 Angstroms thick, which is about twice the thickness of the original polysilicon layer 20 due to growth during oxidation.
Referring to FIG. 3, representative portions of device 10 are shown after several intermediate steps have been performed. While two distinct component segments or element sites 24 and 26 are explicitly illustrated in FIG. 3, it is to be understood that they are representative of a great many similar sites (not shown) wherein similar elements are simultaneously produced in accordance with the description of the inventive process which follows. At both sites 24 and 26, photoresist patterns 28 and 30 have been deposited on polyoxide layer 22 using standard photomasking techniques, after which the unmasked portions of layer 22 are etched away using an etchant which selectively attacks oxide thereby leaving polyoxide portions 32 and 34 as shown. Following the etching step, an ion implant step is performed in a known manner as indicated by the arrows, preferably using boron, to produce P+ regions 36, which penetrate to a depth of about 2000 Angstroms in the portions of the substrate 12 not covered by polyoxide (also referred to as the "field area" of the device 10). The energy of the ions is selected so asto penetrate only through the portions of layers 16 and 18 not covered by photoresist and polyoxide. An intensity of about 1.6�1013 boron ions/cm2 is preferably used in accordance with known techniques as, for example, by means of the techniques described in U.S. Pat. No. 3,898,105, hereinafter cited as Mai et al. Whatever technique is used, however, it is preferred that P+ regions 36 have a resistivity of about one ohm-cm in the areas of highest impurity concentration in the final device.
Next, the photoresist layers 28 and 30 are removed and the portions of the nitride layer 18 not covered by the polyoxide layer portions 32 and 34 are selectively etched away using known techniques, thereby leaving nitride portions 38 and 40 as shown in FIG. 4.
Now referring to FIG. 5, an oxidation is performed in steam for about 6 to 8 hours at approximately 1000� C., which results in the growth of a relatively thick "isoplanar field oxide" layer 42, preferably of about 14,000 Angstroms in thickness, in the portions of the substrate 12 not covered by silicon nitride. The field oxide 42 penetrates into the substrate 12 to a depth of about 7000 Angstroms, the oxidation process driving the boron implant regions 36 to a greater depth therebelow. The P+ regions 36 permit the use of a thinner field oxide 42 by reducing the resistivity thereunder.
Next, the polyoxide layers 32 and 34 are removed by means of etching with hydrofluoric acid in a known manner, which also slightly reduces the thickness of the field oxide 42. Then, the nitride layers 38 and 40 and the remaining portions of oxide layer 16 are removed using conventional techniques, which produces the structure shown in FIG. 6.
Various surface "cleaning" steps are ordinarily used at this point in prior art processes to remove surface damage in the active area of the device. By "active area" is meant those portions of the device where no field oxide has been grown. It has been found, however, that merely cleaning by etching some of the substrate 12 along surface 14 is inadequate to remove silicon nitride contamination which exists along edges 44 of the substrate 12 near the field oxide 42. Small amounts of silicon nitride from layers 38 and 40 are transported to the substrate surface 14 at the edges of the field oxide 42 incident to the chemical process which produces the field oxide 42. Accordingly, an oxidation step is performed, preferably in an ambient atmosphere of hydrogen chloride and oxygen, to produce thermal oxide layers 46 and 48 as shown in FIG. 7, thereby gathering the nitride impurities at edges 44 from the substrate 12 into the oxide as it grows. A thickness of about 300 Angstroms is sufficient for oxide layers 46 and 48, with a preferred thickness being between 300 and 1000 Angstroms.
Next, the oxide layers 46 and 48 are etched away to produce the structure of FIG. 8. It will be appreciated by those skilled in the art that good surface conditions are important to the operation of field-effect device elements, and particularly in the channel of an enhancement mode FET. In accordance with an important feature of the present invention, the oxidizing and etching steps of FIGS. 7 and 8 are effective to remove surface damage (generally occuring in the top 20 to 30 Angstroms of the substrate 12) as well as the silicon nitride contamination, thereby providing the clean, impurity-free surface portions 14 shown in FIG. 8.
As a result of the successive etching steps to remove oxide layers 16, 32, 34, 46, and 48 in the steps shown from FIGS. 5 through FIG. 8, the field oxide 42 is somewhat reduced in thickness. At the process stage shown in FIG. 8, the field oxide has an overall thickness of about 10,000 Angstroms, with about 7000 Angstroms extending to a level below the level of surface 14 and about 3000 Angstroms extending above the level of surface 14.
Next, thermal oxide layers 50 and 52 are grown to a thickness of about 900 Angstroms as shown in FIG. 9. A light dose boron ion implantation is then performed using known techniques as indicated by the arrows for purposes of threshold voltage adjustment of the field-effect elements which will be formed subsequently in sites 24 and 26.
Now referring to FIG. 10, a polysilicon layer 54 is deposited as shown over the entire device 10 to a thickness of about 6000 Angstroms using known techniques. In order to make layer 54 become highly conductive, it is then heavily doped N-type, preferably using phosphorus diffusion as represented by the stippling of polysilicon layer 54 in FIG. 11.
Next, a top portion 56 of layer 54 is oxidized to produce the structure shown in FIG. 12. Polyoxide layer 56 has a preferred thickness between about 2,500 and 5,000 Angstroms, the formation of which causes a corresponding reduction in the thickness of polysilicon layer 54 to between about 3500 and 4800 Angstroms. It is presently preferred, however, that layers 54 and 56 both be about 4000 Angstroms thick.
FIG. 13 illustrates device 10 after masking and etching steps have been performed wherein photoresist patterns 58 and 60 are formed, and the portions of polyoxide layer 56 not covered by photoresist are etched away leaving polyoxide portions 62 and 64. Optionally, another light dose implant may be performed at this stage for fine adjustment of the threshold of the field-effect element to be formed in site 24.
Now referring to FIG. 14, the photoresist has been removed leaving the polyoxide layer portions 62 and 64 as masks for etching away portions of polysilicon layer 54. At similar sites of the device 10 of which sites 24 and 26 are representative, similar polyoxide masks also exist so that etching produces a plurality of separate polysilicon layers in the device 10 of which layers 66 and 68 are representative. The polysilicon layer 66 overlies a portion of thermal oxide layer 50 and extends over an adjacent portion of field oxide layer 42 as shown at element site 24. The polysilicon layer 68 overlies a center portion of thermal oxide layer 52 in the element site 26 as shown in FIG. 14.
The use of polyoxide portions 62 and 64 as masks for etching the underlying polysilicon has advantages over prior art deposited oxide mask in that polyoxide growth produces a highly regular layer having a slower, more controllable etch rate. Such properties of polyoxide enable a high degree of mask definition to be carried through from the photoresist mask (layers 58 and 60 in FIG. 13) to the polyoxide mask (layers 62 and 64 in FIG. 14). The high degree of mask definition is further carried through in the formation of polysilicon layers 66 and 68. By "high definition" is meant "positioned with a higher degree of precision" compared to prior art techniques using deposited oxide masks. The polysilicon layer 68 will be seen later in the process to further serve as a mask for etching the underlying oxide layer, thereby aligning itself over a channel region of a field-effect transistor. The technique of using a polysilicon layer as a mask for producing a self-aligned gate FET is known, the structure also being referred to in the art as a "silicon-gate" FET. The precision (or tolerance) in positioning layers 66 and 68 has a direct bearing on the degree of element density capable of formation in the integrated circuit device 10.
An oxidation step is now performed on the structure of FIG. 14 to cover the exposed edges of polysilicon layers 66 and 68 with polyoxide as shown in FIG. 15. Thermal oxide portions 50 and 52 remain at a thickness of about 900 Angstroms, while uncovered thermal oxide portions 70 and 72 increase the thickness to about 1,500 to 2,000 Angstroms. Polyoxide layers 62 and 64 grow from a minimum of 2500 Angstroms to a thickness of at least about 3,000 Angstroms, which again reduces layers 66 and 68 slightly in thickness.
A new polysilicon layer 74 is now deposited over the device 10 as shown in FIG. 16 using known deposition techniques in similar fashion to the deposition step of FIG. 10. The layer 74 has a preferred thickness of about 4,000 Angstroms.
Next a partial oxidation of polysilicon layer 74 is performed to produce a polyoxide layer 76 having a thickness of about 1,000 Angstroms as shown in FIG. 17. The oxidation reduces polysilicon layer 74 to a thickness of about 3,500 Angstroms.
Now referring to FIG. 18, the device 10 is shown after a photoresist pattern 78 has been used to mask polyoxide layer 76, which is etched away entirely at site 26 and partially at site 24. The remaining polyoxide 76 overlies both a lower portion 80 and an upper portion 82 of polysilicon layer 74 at site 24.
Referring to FIG. 19, the photoresist has been removed and the remaining polyoxide 76 has been used as a mask to etch polysilicon layer 74, thereby removing layer 74 entirely from site 26 and partially from site 24 to produce the structure shown.
It will be seen that the process steps for producing the second polysilicon layer 74 as illustrated in FIGS. 16-19 are essentially the same (aside from thickness variations) as the process steps for producing the first polysilicon layer 66 as illustrated in FIGS. 10-14, except that layer 74 remains undoped at the stage of the process shown in FIG. 19. For purposes of this specification, the term "undoped" means "essentially free of conductivity affecting impurities" such as phosphorus (N-type), boron (P-type) and their known functional equivalents.
It will also be appreciated that the arrangement of polysilicon layers 66 and 74 enables elements of the type shown in site 24 to be arranged in a dense manner in device 10. In particular, by overlapping the field oxide 42 with layer 66 and likewise overlapping layer 66 with layer 74, interconnections between adjacent cells (not shown) are facilitated, and the formation of contacts in subsequent steps is not a limiting factor in choosing the amount of active surface area 14 allocated to element 24.
Next, an etch is performed which selectively removes a portion of polyoxide layer 70 to expose a portion of surface 14 in the area of site 24 not covered by polysilicon and removes polyoxide layer 72 to expose portions of surface 14 in the area of site 26 not covered by polysilicon. Thereafter, an N-type dopant, preferably phosphorus, is diffused using known techniques whereby thermal oxide layers 50, 52 and 70 act as diffusion masks in producing N+ regions 86, 88, and 90 in the substrate 12, to a depth of about 15,000 Angstroms below surface 14 in accordance with the structure of FIG. 20. The phosphorus also diffuses into the top polysilicon layer 74 (as indicated by the stippling), which causes layer 74 to be heavily doped N-type and thus highly conductive. In an alternative embodiment using an N-type substrate, a P-type diffusion, typically using boron, would be performed at this stage to produce the complementary conductivity-type structure of that shown herein.
In order to be sure that no thermal oxide is left on surface 14 where the diffusion is to be performed, it is general practice to over etch somewhat causing a significant amount of lateral etching or undercutting which can be the source of problems in the areas identified by numeral 84. Precise control of the etch duration will minimize the amount of undercutting, which may result in a small amount of polyoxide layers 62 and 64 being left over polysilicon layers 66 and 68 as shown in FIG. 20. In any event, the etched duration must be long enough to remove all oxide from polysilicon layer 74 and from the portions of surface 14 above the diffused regions 86, 88 and 90 to permit the N-type dopants to diffuse therein.
The enlarged view of FIG. 21 shows in greater detail, a typical underctu area 84, such as the area under polysilicon layer 68, where thermal oxide layer 52 has been laterally etched to a distance from peripheral edge 92 of polysilicon layer 68, which distance is typically somewhat greater than the thickness of thermal oxide layer 52.
Now referring to FIGS. 22 and 23, the device 10 is placed in a furnace with dry oxygen or steam at about 900� C. to 1000� C. so that oxide layers of about 2000 Angstroms are grown over the various polysilicon layers as indicated by numerals 94, and over the various N+ regions in the substrate 12 as indicated by numerals 96. The oxidation is effective to fill in the undercut portions 84 as illustrated more clearly in the enlarged view of FIG. 23. The position of the peripheral edge of polysilicon layer 68 prior to oxidation is indicated by the dashed line 92'. The growth of polyoxide layer 94 has the effect of moving the peripheral edge 92 of polysilicon layer 68 slightly to the left in the view of FIG. 23. In addition, growth of thermal oxide layer 96 moves the substrate surface 14 downward from its original position 14'.
Now referring to FIG. 24, a layer 98 of "high temperature" undoped oxide is deposited, preferably using SiH4 and CO2 is a known manner, at a temperature between 600� C. and 1000� C. to a thickness of preferably about 6,000 Angstroms. At a corresponding stage, prior art processes typically deposit a "low temperature" oxide in a range of 350� C. to 450� C., which has a relatively fast etch rate causing extensive undercutting problems as discussed above in the background. The present invention provides a deposited undoped oxide layer 98 which has an etch rate comparable to that of underlying grown oxide layers 94 and 96. Most preferably, oxide layer 98 is deposited by placing the device 10 in a conventional RF reactor and heating the device to about 900� C. or 950� C. to cause the reaction: SiH4 +2CO2 →SiO2 +2CO+2H2.
In accordance with an additional feature of the invention, it will be appreciated that layer 98 is a redundant oxide layer which covers possible defects such as "pin holes" in the underlying oxide layers 94 or 96.
A photoresist mask 100 is then formed over deposited oxide layer 98. Next, contact windows 102 are opened by etching through the portions of oxide layer 98 not covered by photoresist mask 100, and continuing to etch down through the underlying oxide layers 94 and 96 as shown in FIG. 25. While a certain amount of lateral etching undercuts photoresist layer 100 in the manner typical of FIG. 26, the amount of undercut is minimal due to the closely matched etching rates of the "high temperature" undoped oxide layer 98 and the underlying oxide layers 94 and 96. Accordingly, very small contacts may be produced by the present invention as will be seen below.
Next, the photoresist layer 100 is removed, and a stabilization step is performed, preferably using a phosphorus diffusion, as indicated by the stippling along the exposed oxide surfaces shown in FIG. 27 and the enlarged view of FIG. 28. The phosphorus stabilization has the effect of producing very thin oxide layers 104 on exposed silicon surfaces (explicitly shown by way of example in FIG. 28) which are approximately 20 to 100 Angstroms thick.
It is convenient to getter the device 10 concurrently with stabilization, which may be achieved by covering all but the backside (i.e., the bottom surface of the substrate 12 with oxide thereon, not shown) with photoresist after opening windows 102, then stripping the backside down to clean silicon. Stabilization then proceeds as described in the preceding paragraph by removing the photoresist and exposing the device 10 to a phosphorus diffusion, which getters metallic impurities to the backside thereby favorably reducing leakage current.
After the phosphorus stabilization step it is necessary to reopen contact windows 102 through oxide layers 104. A photoresist layer (not shown) is reapplied using the same mask registration which produced layer 100. Then, oxide layers 104 are etched through to the underlying silicon to reopen the contact windows 102, and the photoresist is removed to produce windows 102 typically illustrated by FIG. 29. The window opening 102 at surface 14 shown in FIG. 29 may be controlled to less than 5 microns in diameter, whereas known prior art processes were previously limited to about 8 microns.
Accordingly, it will be seen that the present invention provides a technique for making very small windows so that contacts may be positioned with precision therein. This important feature of the invention is achieved by the above sequence of steps in which the windows are etched through undoped oxide layers prior to stabilization. The process described herein has been found to permit a reduction in the surface area allocated to contacts by about 40% over the best known prior art.
Finally, a metallization process is used to form contacts 106, 108, 110, 112, 114 and 116 in the windows 102 which yields the device structure 10 shown in FIG. 30. The contacts are preferably formed by vacuum deposition of aluminum, photomasking portions of the aluminum, and etching the unmasked portions with etchants which selectively attack the aluminum but not the underlying oxide layer 98.
Those skilled in the art will recognize the utility of the element structures shown in FIG. 30, wherein the element in site 24 serves as charge storage cell or memory cell and the element in site 26 serves as a field-effect transistor.
In particular, the element 26 is a N-channel enhancement mode FET having a self-aligned silicon gate similar to that which is described in Mai et al., cited above, wherein contact 114 serves as a gate contact to silicon gate 68 and contacts 112 and 116 serve as source and drain contacts to regions 88 and 90. The present invention may also be applied to make N-channel depletion mode FETs as well as both modes of P-channel FETs by modification of the process steps specifically recited herein in accordance with the teachings of Mai et al.
The element 24 is a small area memory cell of the destructive readout type known in the art, having a single transistor and a single capacitor. A complementary memory cell may be produced having conductivity types opposite to those specifically shown in site 24 of FIG. 30 as will be appreciated by those skilled in the art.
The operation of a memory cell such as the cell 24 of FIG. 30 is known in the art. Briefly, contact 106 is biased with a voltage sufficient to hold a charge of minority carriers in the substrate 12 in an area 118 along the surface 14 to which conductive polysilicon layer 66 is in close proximity. In circuit analogy,a capacitor is formed by oxide layer 50 serving as a dielectric between the polysilicon layer 66 and the charge storage area 118 in juxtaposition thereunder. The presence or absence of a charge in storage area 118 represents binary information, which may be both sensed and altered through region 86 and contact 110 whenever a gate signal is applied to contact 108. A gate signal applied to contact 108 having a sufficiently high voltage known in the art will be carried by conductive polysilicon layer 74 thereby inducing a channel in substrate 12 along an area 120 near surface 14 immediately under oxide layer 70. Such an induced channel in the area 120 permits electrical communication between data transmission region 86 and the charge storage area 118. The area 120 is the circuit equivalent of a channel region in a FET, which in this embodiment is an N-channel enhancement mode FET. Therefore the memory cell 24 may be viewed as comprising a single transistor and a single capacitor in basic function, ignoring as negligible any incidental capacitances and resistances of the structure.
An advantage of the process steps of the present invention involves the formation of insulating layers 50, 62 and 70 having varying thicknesses which are important to proper device functioning. As discussed above, the inventive process successfully achieves a relatively thin oxide layer 50 having a preferred thickness of about 900 Angstroms, a slightly thicker oxide layer 70 having a preferred thickness of about 1,500 to 2,000 Angstroms, and a substantially thicker oxide layer 62 having a thickness in excess of 3000 Angstroms. Ideally, layer 62 should be as thick as possible to render negligible any parasitic capacitance existing between polysilicon layers 66 and 74. Since layer 62 is polyoxide grown from the 6,000 Angstroms deposit of polysilicon which produced layer 66, the thickness of layer 62 is limited as a practical matter to a maximum of about 8,000 Angstroms, which still leaves a sufficient thickness of polysilicon for layer 66. In present commercial embodiments, layer 62 is about 4,000 Angstroms, while a thickness of 3,000 and 6,000 Angstroms is acceptable.
From the foregoing description, taken with the drawings, it will be apparent that the present invention has broad applicability to commercial semiconductor devices. In particular, the presently described process has great utility in the manufacture of high density RAMs, and has facilitated the manufacture of a "16 K RAM" (i.e., a random-access memory device having 16,384 memory cells).
Although a preferred embodiments of the invention has been described in detail, it is to be understood that various changes, substitutions and alterations can be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
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|U.S. Classification
|International Classification
|Cooperative Classification
|European Classification
|Nov 4, 1987
Owner name: THOMSON COMPONENTS-MOSTEK CORPORATION
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNOR:CTU OF DELAWARE, INC., FORMERLY MOSTEK CORPORATION;REEL/FRAME:004810/0156
Effective date: 19870721
|Jun 20, 1989
|Maintenance fee reminder mailed
|Jul 5, 1989
|Surcharge for late payment
|Jul 5, 1989
|Fee payment
Year of fee payment: 4
|Sep 11, 1989
Owner name: SGS-THOMSON MICROELECTRONICS, INC.
Free format text: CHANGE OF NAME;ASSIGNOR:THOMSON COMPONENTS-MOSTEK CORPORATION;REEL/FRAME:005270/0714
Effective date: 19871023
|Apr 5, 1993
|Fee payment
Year of fee payment: 8
|Mar 22, 1994
|Request for reexamination filed
Effective date: 19931101
|Jul 19, 1994
|Request for reexamination filed
Effective date: 19940512
|Aug 29, 1995
|Request for reexamination filed
Effective date: 19950705
|Apr 3, 1997
|Fee payment
Year of fee payment: 12
|Apr 18, 2000
|Reexamination certificate first reexamination
Free format text: THE PATENTABILITY OF CLAIMS 1-5 IS CONFIRMED. NEW CLAIMS 6-15 ARE ADDED AND DETERMINED TO BE PATENTABLE.


text: EAS Senior Forum is this Tuesday, 5/3 Join us for the annual East Asian Studies Senior Forum! Senior concentrators will give short presentations on various topics with Q&A. Saminya Bangura - Transgender & Non-Binary Representation in Anime and Manga Caroline Granoff - Post-Socialist China in Portrait: An Examination of the 'Crisis of Masculinity' as Reflected in Cynical Realist Painting Christopher Huber - The Shirakawa Barrier: A Poetic History (Distributed April 28, 2016)

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I need someone to write a business plan for an app idea. I need it in 2 days max and you should do all the research yourself online. I will only explain to you the app idea and the wireframes. I would also require you to write a questionnaire for Market research. I will take care of finding people to answer the survey. I need this business plan to pitch it to an investor and I am on a budget.
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Announcement Cozy, inviting handmade quilts, pillows and table runners. Celebrate quality designs crafted for timeless appeal. Discover my entire collection at JacqueAnnDecor.com.
Cozy, inviting handmade quilts, pillows and table runners. Celebrate quality designs crafted for timeless appeal. Discover my entire collection at JacqueAnnDecor.com.
Tracey on Sep 24, 2016
lazypro on Sep 1, 2016
Great seller!! Item arrived safely & quickly, although it was damp. Can't figure that out. But the napkins look just great & I'm very happy with them.
My Studio to Your Home
Welcome to Jacque Ann Decor, a home sewing studio located in Southwest Missouri's Ozark region. Here, you'll find handmade quilts for sale. My work space is tranquil and inspiring. It is a space of organized chaos, where the creative production takes place from design concept to end product.
Jacque Ann Decor handmade quilts are inspired by country cottages and modern farmhouses. My designs are my own and every item is handmade by me in my studio. I strive for elegant results in tune with current fashion and color trends. Attention to detail and quality construction are priority.
I hail from a line of women makers and have a natural passion for the beautifully furnished, hand-touched home. Jacque Ann Decor was established in 2011 for the independent opportunity to pursue and showcase my creative endeavors. It is quite rewarding to have an idea, create an item, and send the item out into the world to be enjoyed by others.
For my designs, I prefer to use 100% pure premium cotton. My handmade quilts are perfect for everyday living, special occasions, holidays and gifts. Celebrate quality designs that mix well with vintage finds and modern schemes alike. More handmade home goods at JacqueAnnDecor.com.
All images and content are the property of Jacque Ann Decor.
Jacque Ann Decor™ Copyright 2016. All rights reserved.
Shop members
Owner, Maker, Designer
For more home decor products, visit me at JacqueAnnDecor.com.
Shop policies
Payment options
- Accepts Etsy gift cards
Returns & exchanges
- Custom or personalized orders
Privacy policy
- To communicate with you about your order
- To fulfill your order


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Stock market and commodity price declines are sweeping the globe, raising a question: If the U.S. economy lands in another hole, what tools does it have to dig itself out?
Perhaps not many, or at least not as many as before the 2008 meltdown.
U.S. debt stands at 74 percent of gross domestic product, compared with 35 percent in 2007, based on a Congressional Budget Office report released Tuesday. That burden is expected to grow further in coming years, limiting government options for additional fiscal stimulus in the form of spending or lower taxes.
While the U.S. could follow in the footsteps of Japan, Ireland, Italy or Greece, which have racked up even higher debt-to-GDP levels, heftier deficits would be a hard political sell. After all, Congress has been loathe to borrow, curbing spending through "sequester" limits and pushing the nation to the brink of default in 2011 amid disputes over a debt-limit extension.
In recent years, the Federal Reserve has provided the stimulus that austerity-minded fiscal policy makers didn't. The central bank has held interest rates near zero since 2008 and carried out three massive asset purchase programs to boost the economy.
Now, cutting interest rates wouldn't be an option in the face of a big downturn. That means the Fed would need to once again turn to unconventional steps such as further asset purchases or increased forward guidance. They've done it before, so it's hard to make the case that they wouldn't do it again, but it does mean that a crucial option — interest rates — is missing from their toolbox.
Partly for that reason, the Bank for International Settlements has warned that still-low rates around the world pose a looming economic risk.
"Restoring more normal conditions will also be essential for facing the next recession, which will no doubt materialise at some point," according to an annual report from the organization of central banks. "Of what use is a gun with no bullets left?"
"Monetary policy normalisation should be pursued with a firm and steady hand," the group advised.


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Famous and Fatherless: Top 10 Single Star Moms
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...Whether the student is a beginner starting from scratch, or an intermediate student that needs to know more than building spreadsheets, I can take them to the highest level they need. As a graphic designer for large corporations, I use Illustrator to create vector graphics that can be enlarged t...
Lynnwood, WAView Tutor
...Thank you. I am a good user of Microsoft Excel and Microsoft Word. I have professional qualifications in accountancy, business and finance.
Bellevue, WAView Tutor
...I consider myself to an expert in teaching the following content: CCSS Math 6, Math 7, Math 8, with the majority of the content being Pre-Algebra and Algebra. I am also and expert teaching Geometry, Statistics, to a certain level, Probability, Pre-Calculus, Trignometry, and Calculus. I hope that you find my profile and experience helpful.
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...I have ocean swimming experience as well. I hold a minor in Biology from Humboldt State University. Originally in my college career I had envisioned being a zoologist or biologist.
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Biological Chemistry
Editor-in-Chief: Brüne, Bernhard
Editorial Board Member: Buchner, Johannes / Lei, Ming / Ludwig, Stephan / Sies, Helmut / Turk, Boris / Wittinghofer, Alfred
SCImago Journal Rank (SJR) 2015: 1.607
Source Normalized Impact per Paper (SNIP) 2015: 0.751
Impact per Publication (IPP) 2015: 2.609
- Online
- 1437-4315
Structural and functional aspects of the multidrug efflux pump AcrB
1Institute of Physiology and Zurich Center for Integrative Human Physiology (ZIHP), University of Zurich, Winterthurerstrasse 190, CH-8057 Zurich, Switzerland
2Cluster of Excellence Frankfurt – Macromolecular Complexes and Institute of Biochemistry, Goethe University Frankfurt, Max-von-Laue-Str. 9, D-60438 Frankfurt/Main, Germany
Citation Information: Biological Chemistry. Volume 390, Issue 8, Pages 693–699, ISSN (Online) 1437-4315, ISSN (Print) 1431-6730, DOI: 10.1515/BC.2009.090, May 2009
Publication History
- Received:
- 2009-03-01
- Accepted:
- 2009-04-29
- Published Online:
- 2009-05-20
The tripartite efflux system AcrA/AcrB/TolC is the main pump in Escherichia coli for the efflux of multiple antibiotics, dyes, bile salts and detergents. The inner membrane component AcrB is central to substrate recognition and energy transduction and acts as a proton/drug antiporter. Recent structural studies show that homotrimeric AcrB can adopt different monomer conformations representing consecutive states in an allosteric functional rotation transport cycle. The conformational changes create an alternate access drug transport tunnel including a hydrophobic substrate binding pocket in one of the cycle intermediates.
Keywords: AcrB; alternate access transport mechanism; antibiotic resistance; binding change mechanism; drug transport; membrane protein structure; multiple drug efflux pump
Citing Articles
Here you can find all Crossref-listed publications in which this article is cited. If you would like to receive automatic email messages as soon as this article is cited in other publications, simply activate the "Citation Alert" on the top of this page.


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Global Award
Introducing the award
The Ahmed Zewail Prize in Molecular Sciences is awarded on a biennial basis to an individual scientist who has made significant and creative contributions, particularly those of a fundamental nature, to any of the disciplines of molecular sciences. The awardee's research activities may cover theoretical and/or experimental aspects of studies in all phases of matter and biological systems.
The award consists of a monetary amount, a gold medal and a certificate.
The Prize winner will be requested to deliver a lecture at the Ahmed Zewail Prize Award Symposium and invite 3 - 4 colleagues to each deliver a supporting lecture covering their work in a related field.
2015 Ahmed Zewail Prize
The 5th Ahmed Zewail Prize in Molecular Sciences has been awarded to Professor Sir John Meurig Thomas from The University of Cambridge, UK for his outstanding contributions to the fundamental understanding of the structures of solids and development and application of the concept of single-site heterogeneous catalysis.
Professor Sir John Meurig Thomas
The University of Cambridge, UK
Professor Thomas's early work as a solid-state chemist was concerned with the characterization and chemical consequences of dislocations and other structural defects in molecular crystals, certain minerals and layered solids. He was one of the first to exploit and adapt electron microscopy as an indispensable chemical tool, of which he has since made imaginative use. He also used a variety of photophysical and photochemical techniques to determine the nature of traps for singlet and triplet excitons and charge carriers in organic molecular solids.
Previous Winners
2013 Ahmed Zewail Prize
Professor Noel S. Hush
The University of Sydney, Australia
Professor Hush developed theories with broad applications for predicting and explaining electron transfer processes. His elegant theories take into account both solvent reorganization and the inner structure of a molecular complex. He also explained how electrons transfer between species covalently linked by bridging molecules. His work has had wide impact in fields ranging from corrosion to solar energy to photosynthesis.
2011 Ahmed Zewail Prize
Professor William H. Miller
University of California, Berkeley, USA
The third Ahmed Zewail Prize was awarded to Professor William H. Miller from the University of California, Berkeley, USA, for his outstanding contributions to the theory of chemical reactions.
2009 Ahmed Zewail Prize
Professor Mostafa El-Sayed
Georgia Institute of Technology, USA
The second Ahmed Zewail Prize was awarded to Professor Mostafa El-Sayed from Georgia Institute of Technology, USA, for his seminal contributions to the understanding of the electronic and molecular dynamics and properties of systems with different length scales, ranging from molecules to nanoparticles to biomedical systems.
2007 Ahmed Zewail Prize (first Ahmed Zewail Prize)
Professor David Buckingham
Cambridge University, UK
The first Ahmed Zewail Prize in Molecular Sciences was awarded to Professor David Buckingham from Cambridge University, UK, for his pioneering contributions to the understanding of optical, electric and magnetic properties of molecules.
Application Process
Every two years a call for nominations will be sent out. Nominations for the Ahmed Zewail Prize in Molecular Sciences should consist of a covering letter with a statement of the contributions made (max 2 pages), a brief biographical sketch, and a list of no more than 15 publications. The covering letter should include a citation describing succinctly the contribution(s) of the person nominated. Up to three supporting letters of reference may accompany the nomination.
Nominations are welcomed from all nationalities and should be written in the English language. Self-nominations are not permitted and those involved in the selection process are not eligible to win the Prize. A voting committee totaling 11 individuals composed of authorities, with a representative geographical division, and a good mix of subject knowledge, will rate the nominations.
Award and Ceremony
The award consists of a monetary amount, a gold medal and a certificate. An awards ceremony takes place at the Ahmed Zewail Prize Award Symposium every two years, where the award winner delivers a lecture at the Symposium.


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My Olympus C40 has been playing up recently, i.e. it couldn't be turned on or allow photos to be reviewed so I returned it to Olympus for it to be looked at and fixed, in the expectation of having to pay quite a lot. I found out yesterday that it would only cost about £36 including VAT for it to be repaired and serviced. I nearly fell off my chair. I mean, it cost me nearly double that for a local tv repair shop to fix my tv and that was just a simple component replacement.
How do they do it? The parts themselves must cost that. Is there no labour charge or something?


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Boeing wins $6.8 billion Air-India order, firms 787-9 EIS
Bair also said Boeing has firmed entry-into-service for the 787-9 to "the end of 2010." Seating capacity, currently at 259, could rise by 10-20 seats.
Might we see a QR order soon?
Milton likes the 787-9: Air Canada Taps Boeing; 'Two Engines Better Than Four'
What really got management excited is the route potential for the 14 new 787s. The first deliveries aren't planned until 2010, and the carrier has options and purchase rights for an additional 46 787s. The 223-seat 787-8 will slowly replace the carrier's 45 767s, which will be more than 20 years old when deliveries start. The carrier also will fly the 259-seat 787-9, which will replace the A330s. CEO Robert Milton sang the praises of the 787-9, which he believes hits the "ultimate widebody sweet spot" in terms of operating economics.
While the competition for Air Canada's order was brutal, Milton said it came down to price and economics. He said the 787 is a "game changer" and offers a "quantum leap" in aircraft technology from equipment flying today. In evaluating the Airbus offer, Milton felt the A350 was a "little larger than we wanted," noting that the Canadian market is a "small one and highly seasonal." The A350 was offered with about 270 seats. "It's a bigger, heavier airplane than we need," he told The DAILY.
Also of interest from the first article:
During a teleconference yesterday to discuss the 787 program, VP and GM Mike Bair said Boeing has firm orders and announced commitments for 217 787s from 18 customers, of which 69 orders are firm. The company has 27 active proposals covering 449 aircraft, a figure that includes the Air-India transaction. He added that in terms of delivery positions, "We are 100% committed in 2008 and 2009, almost at 100% in 2010, and 2011 and 2012 are filling up fast."


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Home > Sunglasses > Tom Ford > FT0441 (01A)
New Releases
Size and availability
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30-day money-back guarantee
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Free outbound and return shipping
30-day money-back guarantee
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FT0441/01A Ophthalmic Glasses
FT0441 is a fashion statement, for which sunshine is not necessarily required, because these sunglasses enhance your natural radiance turning night into day. The FT0441 is available in the Edel-Optics online shop in other styles from Tom Ford collections 2015 and 2016.
With no frills and state-of-the-art materials and craftsmanship, these men's glasses stand for stylish design and self-confidence. Wearing full rim eyewear, you make it unmistakably clear that you are going the whole hog. The square frame is a classical shape, highlighting the straightforwardness of the personality. Plastic is a very lightweight and flexible material. This ensures a long life and a high level of comfort. Black eyeglasses are a must-have. They can be combined with anything and refine any style. Whether at your desk, in a club or at a fashion show - black always fits. Grey lenses are a classic in sunglasses. Their high degree of neutrality with regard to the field of view, makes them particularly suitable for everyday use. You can rely on the guaranteed UV400 protection, for all the sunglasses in our shop.
The model has already been ordered and will shortly be back in stock. If you order now, you will get the reduced price and once the goods arrive, we will send you your new Tom Ford on the same day. And because Edel-Optics is a paradise for bargain hunters, you can get this top model at an incredibly low price. What is labelled as "in the sale" at other online shops, is for us "all-day-everyday" prices.
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Red Lentil Puree
Total Time
Prep 10 mins
Cook 15 mins
This is a wonderful Mediterranean starter or side dish.
Ingredients Nutrition
Lentil Puree
- 7 ounces red lentils
- 1 1⁄2 cups water
- 5 -8 sprigs thyme (10-12 cm long)
- 1 teaspoon sea salt
- 1⁄2 lemon, juice of
- 3 1⁄2 tablespoons olive oil
- 1 garlic clove, minced
- 8 black olives
- 1 teaspoon capers
- 2 cherry tomatoes, halfed
- 1⁄2 small onion, sliced in rings
- Bring water, lentils and thyme to boil.
- Reduce heat to low and cook for 10-15 minutes until lentils are soft and water is absorbed (for cooking time: refer also to package directions).
- Remove Thyme Sprigs and mash Lentils.
- Add salt, lemon juice, olive oil, garlic and pepper to taste. Mix well.
- Serve warm or cold. Decorate with black olives, capers, cherry tomatoes and onion rings.
- NOTE: Mirj suggested to add some lemon zest to the lentil puree. Thank you Mirj, I think this is a great idea to support a fresh note.
Most Helpful
Great recipe! I used dried thyme, too, and omitted the capers but added some lemon zest which indeed is a lovely addition. Thanks for posting!
Made for I've Saved All These Recipes / Diabetes Forum
It was very watery, i am not sure what i did wrong, i had the lentils cook for hours. But the taste was great, thanks for sharing.


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[¡A escuchar!] TraduireLire la suite
Robert Stephenson Smyth Baden-Powell, known as B-P, was born in Paddington, London on 22 February 1857. He was the eighth of ten children of Baden, a Professor at Oxford University, and Henrietta Powell. His father died when B-P was only three years old, leaving the family in a challenging situation.
B-P was given his first lessons by his mother and later attended Rose Hill School, where he gained a scholarship to Charterhouse School. He was always eager to learn new skills and played the piano and the violin. While at Charterhouse he began to exploit his interest in the arts of scouting and woodcraft.
In the woods around the school, B-P would hide from his masters as well as catch and cook rabbits, being careful not to let tell-tale smoke give his position away. The holidays were not wasted either. With his brothers he was always in search of adventure. One holiday they made a yachting expedition round the south coast of England. On another, they traced the Thames to its source by canoe. Through all this Baden-Powell was learning the arts and crafts, which were to prove so useful to him professionally.
Born in Paddington, London, England
Joined the British army and appointed as Sub-lieutenant for the 13th Hussars in Lucknow, India, and specialised in scouting, map-making and reconnaissance
Declared a hero for successfully defending the Mafeking Town during the Boer War and was promoted to Major-General by Queen Victoria
Held a seven-day experimental camp for 20 boys on Brownsea Island, Dorset, England
Retired from the British army as Lieutenant General and focused on the Scout Movement
Married Olave St Clair Soames and subsequently had three children – Arthur, Heather and Betty
Started Gilwell Park Training Centre for Scout Leaders in London, England
Acclaimed Chief Scout of the World at the 1st World Scout Jamboree in London, England
Opened the International Scout Chalet in Kandersteg, Switzerland (now known as the Kandersteg International Scout Centre)
Made Lord Baden-Powell, 1st Baron of Gilwell, by King George V
Built and lived at his home, Paxtu cottage, in Nyeri, Kenya
Passed away in Kenya at the age of 83. He was accorded military funeral and burial at St Peter's Churchyard on 9 January. A memorial service was also held on 27 January at Westminster Abbey, London, England
Posté 21. sep 2016
[¡A escuchar!] TraduireLire la suite
Sois le premier à commenter
Posté 7. avr 2016
Scouting offers learning opportunities that promote personal...
Scouting offers learning opportunities that promote personal growth. Which of those opportunities taught you the most? TraduireLire la suite
Sois le premier à commenter
Posté 31. mar 2016
"The (Grand Howl) means that you will do your best with both...
"The (Grand Howl) means that you will do your best with both hands - not merely one like most boys, who only use their right hand. Your best will be twice as good as the ordinary boy's best. 'Do your best' is the Cub's motto." - #BadenPowell #Cubs100 TraduireLire la suite
Commentaire récentView all (5)
Good Traduire
Posté 24. mar 2016
Through Scouting activities, #Scouts learn the importance...
Through Scouting activities, #Scouts learn the importance and benefits of supporting each other. How has this helped you in your life? TraduireLire la suite
Sois le premier à commenter
Guido Ricardo
Posté 23. mar 2016
Nuestro objetivo es educar a la próxima generación como ciud...
Nuestro objetivo es educar a la próxima generación como ciudadanos útiles con una perspectiva mas amplia que antes y por lo tanto el desarrollo de la buena voluntad y la paz en el mundo atrevas de la camaradería y la cooperación... #BP TraduireLire la suite
Sois le premier à commenter
Posté 17. mar 2016
Where's your troop's most favourite nature spot? TraduireLire la suite
Sois le premier à commenter


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Product Description
Scott Drake Steering Box Rebuild Kit for 1967, 1968, 1969 and 1970 Mustangs with a 1-1/8" Sector Shaft.
After years of use, your 1967-1970 Mustang's steering box can become loose, making it difficult to steer your Mustang and keep it in the correct lane without constant corrections on your part. While this looseness can be caused by a variety of problems, the two most likely reasons are wear and corrosion. Get your classic Mustang safely back on the road and steering like it should with this Scott Drake Steering Box Rebuild Kit for Mustangs with a 1-1/8" sector shaft.
Features & Benefits:
- For Late 1967-1970 Mustangs with a 1-1/8" Sector Shaft
- Tightens Up that Loose and Drifting Feeling You Experience While Driving
- Includes Everything You Need to Rebuild Your Mustang's Steering Box
- Easily Installed Direct Fit Replacements
Rebuild Kit Includes:
- Upper and Lower Worm Bearings
- Upper and Lower Races
- Sector Bearings
- Sector Seal
- Gasket
A properly working steering wheel is vital for your safety and well-being as you're driving, not to mention the safety and well-being of the other drivers on the road. This Scott Drake C7ZZ-3548-RK Steering Box Rebuild Kit can tighten up that loose, drifting feeling you're experiencing while you're driving your late 1967-1970 Mustang with a 1-1/8" sector shaft. It includes everything you'll need to rebuild your Mustang's steering box, and it's an easily installed direct fit replacement. You'll get the upper and lower worm bearings, upper and lower races, sector bearings, a sector seal and a gasket.
*This kit will also fit 1967-1970 Mercury Cougars.
Order a Scott Drake C7ZZ-3548-RK Steering Box Rebuild Kit for your 1967, 1968, 1969 or 1970 Mustang with a 1-1/8" Sector Shaft from CJ Pony Parts today!
Similar Mustang PartsMore Mustang Parts
Installation Instructions
Product ReviewsWrite a review
Product Questions
Will this kit work with steering box SMB-D out of a 1970 Mustang?
What special tools are required for this rebuild?
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text: Giant LED Clock Stores CDs, Gets You Back to the '80sJesus Diaz8/01/08 9:11amFiled to: ClockBookcaseLedGadgetscd caseShelfShelves28EditPromoteDismissUndismissHideShare to KinjaToggle Conversation toolsGo to permalink Ooooh. Shelves. And red LEDs. They tell time. They store CDs. Who has CDs? Not me. But I don't care. It's a giant digital clock. Red over black, baby. 1980s, here I come again. Now I just need to rescue my white suit, tight pink T-shirt, and call Tubbs to pick me up in the Ferrari. Unfortunately, they are not for sale in the US or anywhere else. [Technabob]Gear from Kinja DealsBaseLift By Twelve South: The Only Thing Worth Attaching To Your MacBookBestsellers: Philips Wake-up Light HF3500Save $15 on (Almost) Any $60 eBay OrderReply28 repliesLeave a reply


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DENY Holli Zollinger
Holli Zollinger Ammah Quatrefoil Magnet Board
Art Title: ammah
I'm late, I'm late for a very important date. But that'll never be a problem again with the Quatrefoil Magnet Board where you can post reminders, photos, invites and artwork. Using a mix of baltic birch ply trim that's unique to each piece and a glossy steel face, the magnetic attraction will be undeniable.
- Baltic birch play frame and high gloss steel front with UV resistant coating
- 5 stylish push pin magnets included
- Mounting hardware included
- Custom made in the USA
- Estimated Ship Date: 5-10 business days
- This item is eligible for a return or exchange in new condition within 30 days
Small: 14" x 17" x 1"
Medium: 23" x 28" x 1"
Holli Zollinger is a self-taught artist who has made a career of her talents: drawing, painting, graphic and fabric design. Inspired by nature and motivated by creating, Holli incorporates color, texture and pattern she sees from her native Utah. She spends most of her day juggling between the inspirations of being a designer and the day-to-day schedule of motherhood.


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Best Western Introduces Google Wallet Integration
Monday April 14th, 2014 - 9:23AM
These are shortcuts to your favorite social networking and bookmark sites. Add this story to your Facebook page, del.icio.us, DiggIt, and many others!
PHOENIX—Best Western International is streamlining the hotel booking process by working with Google to allow guests to pay for their stay using Google Wallet. The brand will integrate Google Wallet within the Android version of its popular "Best Western To Go" application and mobile website viewed through a browser on any device.
By adopting Google Wallet, Best Western is reducing the amount of steps consumers need to take to complete a mobile reservation. Once a customer selects their hotel within the Best Western mobile app or mobile website, they can complete their reservation using the "Buy with Google" button.
Google Wallet lets users purchase on mobile apps and sites in as few as two clicks. Users can easily create a Google Wallet account to get started. Google Wallet users can use the service to book a hotel stay globally at any of the brand's more than 4,000 hotels.
"Best Western's goal is to get to one click mobile booking, and our Google Wallet integration is the next step in simplifying the booking and payment process," stated Dorothy Dowling, SVP of sales and marketing at Best Western International. "As mobile becomes ever more popular amongst travelers, we're committed to leveraging the latest advances in technology in order to constantly improve the shopping and booking experience for our guests."
Google Wallet is available for free from Google Play and the iTunes App Store.
Tags: Best Western • Hospitality • Guest Facing •
For our special report, "A View from the C-Suite," we took the temperature, so to speak, of executives representing our broader readership to present the views from not only the brands, but from leaders who head owner, broker, lender and management firms. Our executive lineup in this issue includes Jim Merkel, CEO, Rockbridge; Teague Hunter, president, Hunter Hotel Advisors; Jon Wright, president/CEO, Access Point Financial; John Belden, president/CEO, Davidson Hotels & Resorts; and Keith Cline, president/CEO, La Quinta Holdings Inc.
Radisson RED to Debut in Minneapolis in November »
Anbang to Complete Acquisition of Strategic Hotels & Resorts
Kimpton Unveils Plans for Miami Property
Hyatt to Convert Nashville, TN Building Into Luxury Hotel
HB ON THE SCENE: The Lodging Conference—Positive Vibe Still Permeating Industry
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Destination Hotels, Commune Hotels & Resorts Intro Two Roads Hospitality
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Participate in This Event or find another event
Thursday, July 14, 2016
8:30 a.m.-5 p.m.
Eli Lilly and Co
893 S Delaware St, Indianapolis, IN Map it
Already a participant?
Log in here
29 teams and 381 participants have raised $75,995.41
Total above may not reflect all participants, teams, and donations
Lilly Employee Matching Gift Instructions:
Did you donate $25 or more to Relay For Life?
Follow these easy steps to make your dollars go further with the US Lilly Matching Gifts Program!
Relay For Life of Lilly Corporate Center, along with the specific team name or participant that should be credited.
If you have questions, please email email@example.com before submitting your match.
The American Cancer Society Relay For Life movement is the world's largest and most impactful fundraising event to end cancer. It unites communities across the globe to celebrate people who have battled cancer, remember loved ones lost, and take action to finish the fight once and for all. With the support of thousands of volunteers like you, the American Cancer Society is helping save more than 500 lives a day. Please join us and take action against a disease that has taken too much!
Remember or honor a loved one who has battled cancer with a luminaria tribute bag »
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One of the hardest working actors since breaking out in Stanley Kubrick's A Clockwork Orange many decades ago, there seems to be no caliber of project Malcolm McDowell won't touch. Mostly relegating himself to the small-scale horror and thriller genre as of late, we've now got the first look at his latest film, Sanitarium.
Set for a festival debut this spring, the film is a horror anthology but instead of the more expansive recent offerings like V/H/S and The ABCs Of Death, this one takes on just three different stories. From directors Bryan Ramirez, Kerry Valderrama and Bryan Oritz, each of the horror tales features a patient at an insane asylum. With Pop Pistol's Coyote in the background, check out the trailer below (via The Playlist) for the film also starring Robert Englund, Lacey Chabert, Lou Diamond Phillips and John Glover.
The always frightening Malcom McDowell stars as Dr. Stenson, head psychiatrist presiding over a sanitarium where hardly anyone ever gets well. In tales of three of the sanitarium's most disturbed patients, we soon see why. Robert Englund, John Glover, Jeremy Ray Valdez (La Mission) and Lou Diamond Phillips (La Bamba) star in this triptych anthology from Texas filmmakers Bryan Ramirez, Kerry Valderrama and Bryan Oritz. Superlatively shot, this creepy "Tales of the Crypt" style chiller reminds of us how the mind is sometimes humanity's most powerful weapon. And beware the progressive shift in the ill, from the sane to the insane…darkness descends.
Sanitarium premieres on March 1st at Miami International Film Festival.
Since any New York City cinephile has a nearly suffocating wealth of theatrical options, we figured it'd be best to compile some of the more worthwhile repertory showings into one handy list. Displayed below are a few of the city's most reliable theaters and links to screenings of their weekend offerings — films you're not […]
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Setting The Record Straight: A History Of All The Craziest Beyonce/Jay-Z Baby Rumors Ever
It's been nine months of non-stop rumors and speculation…let's look at all the crazy news!
Ever since Bey and Jay have been a couple, people have been going around speculating all about their unborn baby. But things only got crazier since Bey announced that she was officially pregnant. So let's take a look at all of the crazy rumors we've had to endure since Bey showed us that bump.
Early Rumors – Ever since these two got together for the first time, people have been speculating that Bey was pregnant. Even though it's probably been gas every time!
Bey's VMA Debut – When she popped up at the VMAs people were saying she was wearing a damn prop belly! Why? Here's why…
Bey's Pre VMA Tummy – Right before her VMA reveal, Bey had a few intimate shows in New York. But her tummy apparently looked really flat! This only fueled the idea that her VMA baby was a fraud! Get a grip people.
The Godfather – We're not sure how this rumor got started, but Kanye West has been rumored to be the baby's godfather just because he wanted to buy it a bunch of gifts. Maybe he is, but there hasn't been much confirmation yet.
The Daddy Knowles Lie – Then we had the rumor that Daddy Knowles wanted to pass on his illegitimate child as Bey and Jay's, making the pregnancy a fake bump to cover up for his child. SMH.
The Disappearing Bump – It all hit the fan a little bit ago when Bey sat down and it looked like her bump suddenly disappeared into thin air! Things haven't been the same since.
It's A Girl! – Kelly Rowland apparently spilled the beans that Bey's baby is a baby girl! We actually think this rumor makes sense.
The Baby Has A Name-O! – So the baby's name is "Tiana May"? Even though that sounds strikingly similar to the line "I gotta feed Tiana mayne" from "What We Do" from 2003 that references Jay's niece. But people ran with that stupid rumor.
The New Year's Baby! – Apparently B's baby has been born since New Year's? Right. When will it end?!
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*Exclusive* Chris Brown's Girlfriend "Karrueche Tran" Exposed As Crack Slore Doing Chris For A Come Up [Video]
Eclectically Fresh: Solange Shows Off Her Boo And Juelzy In New Photoset From The French Countryside
More Divorce Drama: Deion Sanders' Daughter Says Pilar Is A Liar, Divorce Has Been Going On For Months And She's Been Getting Chopped Down By Young Boys
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Academic Standing
Scholastic Distinction — To encourage high standards of scholarship at Trinity Western University, the following scholastic honours will be recognized:
- Full-time students who achieve 3.60 or higher current grade point average are listed on the Dean's List each semester. (Pass/Fail courses do not count toward Dean's List status.)
- Recognition of high levels of scholastic achievement will be made upon graduation, i.e. great distinction for a cumulative GPA of 3.70 or higher and distinction for a cumulative GPA of 3.30 to 3.69.
Academic Probation — All Trinity Western University students are expected to maintain a level of academic achievement that will enable them to graduate at the completion of their program. The University minimum cumulative GPA is 2.00; while some departments, especially those involved with professional programs, set the minimum GPA at a higher level. In order to continue in their program from semester to semester, students whose cumulative GPA is below 2.0 during first and second year, or below 2.10 during third and fourth year must achieve academic standards that are monitored by the Academic Standards Committee. Failure to meet these standards will result in restrictions on course registration and may result in required enrolment in the Academic Recovery Program and/or being required to withdraw from the University.
Students below the required GPA (2.0 during first and second year, or 2.10 during third and fourth year) are notified of their status after the completion of each semester and are encouraged to engage a plan to improve their academic standing. Programs available at the University to assist students in this regard include a Study Skills course and the Choosing to Succeed program. If a student continues to report an unacceptably low GPA after several semesters, the University will normally require the student to withdraw.
Academic trial for the first semester of attendance may be required for students with a low standardized test score or who have completed an ACE program, providing these students with an opportunity to achieve success in university studies. Such students should take SKLS 001 (Study Skills) and will have a reduced academic course load.back to top
This page contains official TWU academic program information.


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Is India the world's most
dynamic emerging economy?
Latin America is home to a diverse group of countries and each economy offers a different set of investment opportunities, risks and challenges.
Population size, economic growth, urbanization, income expansion and younger work forces are combining to turn emerging markets into a growth engine unlike any before.
The wide disparity in recent equity market performance of emerging market economies underscores the critical importance of bottom-up stock selection in these markets.
Our worldwide team of 134 investment professionals maintains a sharp focus on emerging markets while collaborating around the globe and around the clock.
Is India the world's most
dynamic emerging economy?
A close look at the two largest Latin American economies by GDP: Brazil and Mexico.Read
Our Asia Fund seeks to identify those companies which are already—or that we expect to become—leaders in this dynamic region.
The page you have selected will open in a new window. Please read the disclaimer below before continuing.
We have provided this link only as a convenience. Providing this link is not and does not imply an affiliation, sponsorship, endorsement, approval, investigation, verification, or monitoring by Mirae Asset of any information contained in the Website. In no event shall we be responsible for the information contained on the site or your use of, or inability to use, the site. You should also be aware that the terms and conditions of the site and the site's privacy policy may be different from those applicable to your use of http://investments.miraeasset.us.


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The Chalice of Magdalene: The Search for the Cup That Held the Blood of Christ
The Search for the Cup That Held the Blood of Christ
by Graham Phillips
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Reveals the discovery of an artifact that many experts believe may be the Holy Grail
• Traces the journey of the Grail from the Holy Land to Rome and eventually to a ruined chapel in Shropshire, England
• Uncovers new evidence identifying the historical King Arthur and his connection to the Holy Grail
The popular Arthurian stories of the Middle Ages depict the Holy Grail as Christ's cup from the Last Supper, which was believed to have been endowed with miraculous healing powers and the ability to give eternal life to whoever drank from it. A much earlier tradition, however, claimed the Grail was the vessel used by Mary Magdalene to collect Christ's blood when he appeared to her after rising from the tomb. While many vessels were claimed to have been the true Grail, there was only one thought to have been the chalice used by Mary. From Jesus' empty tomb, where it remained for almost 400 years, this holy relic known as the Marian Chalice was taken to Rome by the mother of the first Christian emperor, Constantine the Great. It was then smuggled from Rome in 410 A.D., according to the fifth-century historian Olympiodorus, to save it from the barbarians who sacked the city. Well into the Middle Ages legend persisted that it had been taken to safety in Britain, the last outpost of Roman civilization in Western Europe.
This journey to England, and what happened to the Chalice there, is the focus of this book. Graham Phillips's research uncovers the secret legacy of an ancient noble family over generations and a trail of clues hidden in the English countryside that lead to a mysterious grotto, a forgotten attic, and the lost chalice. In tracing the relic, Phillips offers the inside story behind an astonishing adventure that results in the identification of the historical King Arthur and the location of one of the most powerful symbols in Western tradition.
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The Chalice of Magdalene: The Search for the Cup That Held the Blood of Christ
by Graham Phillips
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by on October 01, 2016
eBook Details
- Inner Traditions/Bear & Company, January 2004
- Imprint:
Bear & Company
- 9781591438779
- Language:
- English
- Download options:
- EPUB 2 (Adobe DRM)
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Tricky Tracks Cheats for BlackBerryHome / BlackBerry /
This page contains Cheats for Tricky Tracks organized by sections for BlackBerry. This game has "Puzzle" as genre, made by Oasys Mobile, Inc., released on Aug 10, 2009. If you can't find a hint or secret in our list, then please check this page periodically for the latest updates.
- Developer: Oasys Mobile, Inc.
- Publisher: Oasys Mobile, Inc.
- Genre: Puzzle
- Release: Aug 10, 2009
- ESRB: Not Set
If you know cheat codes, secrets, hints, glitches or other level guides for this game that can help others leveling up, then please Submit your Cheats and share your insights and experience with other gamers.
Im stuck on level 3 on Tricky Tracks...help...
Posted on: 05-03-2012
Stuck in this game? Set a specific, clearly defined question and let other gamers answer your question or view answers to previously asked questions. If you think you are an expert then please try to help others with their questions.
Solitaire - Gameplay Video
- Feb 23, 2015, Views: 77
Need For Speed: Shift - Gameplay Video
- Dec 28, 2014, Views: 177
Pixelated - Gameplay Video
- Dec 28, 2014, Views: 168
Spider-Man Toxic City - Gameplay Video
- Dec 28, 2014, Views: 201
- The Journey: Bob's Story, (PC)
- Call Of Duty: Infinite Warfare, (PS4)
- Titanfall 2, (XONE)
- Beyblade Burst, (3DS)
- Dragon Ball: Xenoverse 2, (PS4)
- Steins;Gate Zero, (PS4)
- Mario Party: Star Rush, (3DS)
- Runbow, (3DS)
- Gears Of War 4, (XONE)


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Research Digest: Good looks and happiness
As shallow as it may be, most of us probably have the sneaking suspicion that we would be happier if we had more attractive facial features and a lither, more athletic body. But are we falling prey to a well-known psychological illusion?
In a guest post on our Research Digest blog, David Robson looks at a paper that suggests we are.


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Grades 6-8
Curriculum Materials
Field Trip to the Moon Companion Guide (for classroom and general use)
Buckle up your virtual seatbelts for a trip to the Moon! This guide provides the key educational concepts of this show. After you "land on the Moon," use the suggested activities to continue your lunar exploration.
Curriculum Materials
Field Trip to the Moon Companion Guide (for visitors to the American Museum of Natural History)
Buckle up your virtual seatbelts! This guide provides the key educational concepts of the dome show at the Museum's Hayden Planetarium. After you "land on the Moon," use the suggested tours to continue your lunar exploration throughout the Museum.
Educator Guide, Curriculum Materials
Field Trip to the Moon Educator's Guide
Take your students on a comprehensive tour of the moon to help them discover careers in science and education with this DVD and its classroom investigations.
Science Explorations: Soar with Bats
Bats spend the night trying to fill their bellies. In fact, you'd have to down 10 pizzas for dinner to keep up with some. Investigate the 1,100 species that take to the night skies by the millions.
Staff Profile
Animal Keeper (SuperScience)
From blue butterflies and red frogs to a green iguana nicknamed "Iggy," meet the live animals in the Museum's exhibitions and the people who take care of them.
Reference List
Deep Sea Vents Web List
Want to dive deeper into the study of deep sea vents? Tour an active submarine volcano, ride the "Global Conveyor Belt for Heat," listen in to sounds of the deep, and more with this site-seeing list.
Be an Exhibition Explorer in Petra: Lost City of Stone
Go on an archaeological scavenger hunt to discover the significance of the objects displayed in the museum's Petra exhibit—and get a close-up look at the rich cultural heritage of the ancient Nabataeans.
Staff Profile
Animal Keeper (Science World)
Live animals add an element of surprise to Museum displays. But they need more than a cute face or bright colors to earn a spot in an exhibition hall. Find out what it takes.
Educator Guide, Curriculum Materials
Field Trip to the Moon Informal Educator's Guide
After a trip the immersive Hayden Planetarium, continue the lunar exploration with these interactive workshop activities that investigate the Moon's habitability and sustainable resources.
Educator Guide
Field Trip to the Moon Live Presenter Script
Orbit the Earth and get an astronaut's view of a sunrise in space with this word-by-word script for the Field Trip to the Moon program at the Hayden Planetarium.


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Creamy Microwave Mac and Cheese
Total Time
Prep 20 mins
Cook 15 mins
From "Rush Hour Recipes". Nice and easy in the microwave.
Ingredients Nutrition
- 4 cups water
- 1 cup elbow macaroni, uncooked
- 2 tablespoons butter
- 3 tablespoons flour
- 1⁄2 teaspoon salt
- 1 cup low-fat milk
- 1 cup cheddar cheese, grated
- breadcrumbs (optional)
- In a medium saucepan, boil water. Add macaroni and cook 8 minutes; drain.
- In a glass or microwave safe dish, melt butter for 30 seconds. Blend in flour and salt.
- Stir in milk until smooth.
- Microwave 2 minutes, stirring with a fork after 1 minute, until thickened.
- Stir in cheese until completely melted.
- Pour well drained macaroni into cheese sauce, mixing well.
- Microwave at medium-high heat for 3 minutes.
- If desired, sprinkle top with bread crumbs before serving.
Most Helpful
I'm not a mac and cheese fan, and I thought this recepie tasted very good, and was quite easy to make. The breadcrumbs are a fantastic addition! I added some cooked, shredded chicken breast to the mac and cheese to make it a full meal, and it is also very good.
I loved it and I have been looking for a recipient for this it is amazing
My wife';s highest praise for a meal is, "you can make this any time." She usually save this comment until her plate is cleared. For this mac and cheese she told me after her second bite. Easy and delicious? Yes, this is good stuff. I sometimes double the cheese, because, well, cheese.


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- News tagged "samsung"
Thursday, 8 May 2014
Samsung Replaces Head of Mobile Design, Poor Response of Galaxy S5 to Be Blamed?
Reuters reported that Samsung Electronics has replaced the head of its mobile design team. Chang Dong-hoon is said to have offered his resignation last week. He will be replaced by Lee Min-hyouk, who is the Vice President for mobile design.
Wednesday, 7 May 2014
You Can Control the Samsung WW9000 Washing Machine Anywhere with a Smartphone App
Samsung has just announced its 2014 lineup of washers for the Singapore market. And the flagship model is the Wi-Fi-enabled WW9000.
Samsung Galaxy S5 Available in Gold, Blue and 16GB Model from May (Updated)
Samsung Singapore today announced the launch of the Galaxy S5 LTE in two new colors. There is also a 16GB model of the Galaxy S5 available for purchase.
Samsung Will Appeal Against US$120 Million Patent Verdict
Samsung has confirmed that it intents to appeal against the US$120 million verdict, claiming that the decision was "unsupported by evidence".
Samsung to Unveil Galaxy S5 Prime in June?
The Korea Herald claims in a report that Samsung is planning to unveil the Galaxy S5 Prime with a QHD display in June.
Tuesday, 6 May 2014
Jury Orders Samsung to Pay Apple US$119.6 Million in Infringement Case (Updated)
A federal court has ruled that Samsung did infringe on several Apple patents and has ordered the Korean tech giants to pay Apple US$119.6 million in damages.
Tuesday, 29 Apr 2014
Samsung Unveils the 20.7MP Galaxy K Zoom, Comes with 10X Optical Zoom and OIS
Samsung Electronics today announced a new camera-centric smartphone, the Galaxy K Zoom which comes with a 20.7-megapixel BSI CMOS sensor, new retracting lens technology that offers 10x optical Zoom and optical image stabilization (OIS).
Friday, 25 Apr 2014
Samsung Techwin Releases SNH-P6410BN Full 1080p HD Pro SmartCam
Equipped with an IR night vision mode, the WDR function helps deliver quality videos even in environments with poor lighting. It lets you stay connected with your child or pets as it includes a built-in microphone and speaker for 2-way communication.
Thursday, 24 Apr 2014
Samsung Apps Among Least Used by Galaxy Owners
A study by Strategy Analytics reveals that while Samsung Galaxy devices are among the best-selling in the world, their own apps are the least used by their users. More after the jump.
Wednesday, 23 Apr 2014
Emails Reveal that Google Will Pay Some of Samsung's Legal Costs
In the ongoing trial of Apple against Samsung, it has been revealed that Google has agreed to provide partial or full indemnity should Samsung lose.


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The Reptile Room
The Reptile Room
HarperCollins Publishers, Hardcover, 9780064407670, 208pp.
Publication Date: August 25, 1999
List Price: $13.99*
* Individual store prices may vary.
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SOON TO BE A NETFLIX ORIGINAL SERIESViolet, Klaus, and Sunny Baudelaire are intelligent children. They are charming, and resourceful, and have pleasant facial features. Unfortunately, they are exceptionally unlucky.In the first two books alone, the three youngsters encounter a greedy and repulsive villain, itchy clothing, a disastrous fire, a plot to steal their fortune, a lumpy bed, a deadly serpent, a large brass reading lamp, a long knife, and a terrible odour.In the tradition of great storytellers, from Dickens to Dahl, comes an exquisitely dark comedy that is both literary and irreverent, hilarious and deftly crafted. Never before has a tale of three likeable and unfortunate children been quite so enchanting, or quite so uproariously unhappy.