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CdZnTe technology for gamma ray detectors
Science Conference Proceedings (OSTI)
CdZnTe detector technology has been developed at NASA Goddard for imaging and spectroscopy applications in hard x-ray and gamma ray astronomy. A CdZnTe strip detector array with capabilities for arc second imaging and spectroscopy has been built as a prototype for a space flight gamma ray burst instrument. CdZnTe detectors also have applications for medical imaging
Carl Stahle; Jack Shi; Peter Shu; Scott Barthelmy; Ann Parsons; Steve Snodgrass
Fluorescent CdSe/ZnS nanocrystal-peptide conjugates for long-term, nontoxic imaging and
E-Print Network (OSTI)
Fluorescent CdSe/ZnS Nanocrystal-Peptide Conjugates forfluorescent labels, silanized CdSe/ZnS nanocrystal-peptidenuclei of living cells. CdSe/ZnS nanocrystals, or so called
Chen, Fanqing; Gerion, Daniele
CdSe/ZnS Nanoparticle Composites with Amine-Functionalized Polyfluoren...
NLE Websites -- All DOE Office Websites (Extended Search)
CdSeZnS Nanoparticle Composites with Amine-Functionalized Polyfluorene Derivatives for Polymeric Light-Emitting Diodes: Synthesis, Photophysical Properties, and the...
Simulated Performance of the GammaTracker CdZnTe Handheld ...
Simulated Performance of the GammaTracker CdZnTe Handheld Radioisotope Identifier Carolyn E. Seifert, Member, IEEE, Mitchell J. Myjak, Member, IEEE, ...
Spectroscopic Cathodoluminescence Studies of the ZnTe:Cu Contact Process for CdS/CdTe Solar Cells: Preprint
DOE Green Energy (OSTI)
This conference paper describes the spectroscopic cathodoluminescence (CL), electron-beam induced current (EBIC), and capacitance-Voltage (C-V) measurements are used to study the formation of CdS/CdTe devices processed using ion-beam milling and a ZnTe:Cu/Ti contact. Results show heating in vacuum at {approx}360 C and ion-beam milling lead to observable changes in the CL emission from the CdCl2-treated CdTe surface. Changes in the CL spectrum are also observed as ZnTe:Cu layer thickness increases. These changes are correlated to published studies of defect levels and shown to be due, possibly, to an n-type region existing between the ZnTe:Cu contact interface and the p-CdTe layers. This n-type region is eliminated once a sufficiently thick ZnTe:Cu layer is produced.
Gessert, T. A.; Romero, M. J.; Johnston, S.; Keyes, B.; Dippo, P.
Nanoimprinted photonic crystals for the modification of the (CdSe)ZnS nanocrystals light emission
We report experimental results of photoluminescence (PL) enhancement in 2D photonic crystals nanoimprinted in functionalized poly-methyl methacrylate (PMMA) based polymer in which (CdSe)ZnS core-shell luminescent nanocrystals (NCs) have been incorporated. ... Keywords: (CdSe)ZnS nanocrystals, Light extraction, Nanoimprint lithography, Photoluminescence, Photonic crystal
V. Reboud; N. Kehagias; M. Zelsmann; M. Striccoli; M. Tamborra; M. L. Curri; A. Agostiano; D. Mecerreyes; J. A. Aldunc�n; C. M. Sotomayor Torres
Low-cost CdZnTe devices for cascade cell application
This report describes a research program to develop a low-cost technique for producing Cd{sub 1-x}Zn{sub x}Te devices for cascade solar cell applications. The technique involves a two-stage process for fabricating such devices with a band gap of about 1.7 eV and a transparent contact layer of low-resistivity ZnTe. In the first stage, thin films of Cd, Zn, and Te are deposited in stacked layers as Cd{sub 1-x}An{sub x}Te. The second stage involves hearing and reacting the layers to form the compound. At first, electrodeposition was used for depositing the layers to successfully fabricate Dc{sub 1-x}Zn{sub x}Te thin-film devices. These films were also intrinsically doped with copper. For the first time, transparent ZnTe films of low resistivity were obtained in a two-stage process; preliminary solar cells using films with low Zn content were demonstrated. A second phase of the project involved growing films with higher Zn content (>15%). Such films were grown on CdS-coated substrates for fabricating devices. The effects of the solar-cell processing steps on the Cd{sub 1-x}Zn{sub x}Te and CdS/Cd{sub 1-x}Zn{sub x}Te interfaces were studied; results showed that the nature of the interface depended on the stoichiometry of the Cd{sub 1-x}Zn{sub x}Te thin film. A sharp interface was observed for the CdS/CdTe structures, but the interface became highly diffused as the Zn content in the absorber layer increased above 15%. The interaction between the CdS window layer and the Cd{sub 1-x}Zn{sub x}Te absorber layer was found to result from an exchange reaction between Zn in the absorber layer and the thin CdS film. 14 refs., 10 figs.
Basol, B.M.; Kapur, V.K. (International Solar Electric Technology, Inglewood, CA (USA))
Aqueous synthesis and characterization of CdSe/ZnO core-shell nanoparticles
Core-shell nanomaterials based on CdSe as the core and ZnO as the shell were prepared using an aqueous route involving the use of Cd salt and NaBH4 in reaction with Se to generate CdSe in the presence of thioglycerol (TG) as a stabilizer. ...
B. P. Rakgalakane; M. J. Moloto
003 Biosynthesis of CdS and ZnS Nanoparticles by Fungi Biomass
Presentation Title, 003 Biosynthesis of CdS and ZnS Nanoparticles by Fungi Biomass. Author(s), Luis Reyes, Idalia Gomez, Teresa Garza. On-Site Speaker�...
Preparation of DNA-Functionalised CdSe/ZnS Quantum Dots
We functionalised core-shell CdSe/ZnS quantum dots (QDots) with short-chain 3-mercaptopropionic acid (3MPA) to render these nanocrystalline semiconductor water-soluble. The ligand-exchange reaction was significantly improved ...
Pong, Boon Kin
DEVELOPMENT OF CdZnTe RADIATION DETECTORS
Cadmium Zinc Telluride (CdZnTe or CZT) is a very attractive material for room-temperature semiconductor detectors because of its wide band-gap and high atomic number. Despite these advantages, CZT still presents some material limitations and poor hole mobility. In the past decade most of the developing CZT detectors focused on designing different electrode configurations, mainly to minimize the deleterious effect due to the poor hole mobility. A few different electrode geometries were designed and fabricated, such as pixelated anodes and Frisch-grid detectors developed at Brookhaven National Lab (BNL). However, crystal defects in CZT materials still limit the yield of detector-grade crystals, and, in general, dominate the detector's performance. In the past few years, our group's research extended to characterizing the CZT materials at the micro-scale, and to correlating crystal defects with the detector's performance. We built a set of unique tools for this purpose, including infrared (IR) transmission microscopy, X-ray micro-scale mapping using synchrotron light source, X-ray transmission- and reflection-topography, current deep level transient spectroscopy (I-DLTS), and photoluminescence measurements. Our most recent work on CZT detectors was directed towards detailing various crystal defects, studying the internal electrical field, and delineating the effects of thermal annealing on improving the material properties. In this paper, we report our most recent results.
Photoluminescence spectral study of single CdSe/ZnS Colloidal Nanocrystals in Poly(methyl methacrylate) and Quantum Dots molecules
of the CdSe/ZnS nanocrystals . . . . . . . .D. CdSe/ZnS NCs in negative photon resist SU-line shapes of single CdSe VI Optical characterization of
Shen, Yaoming
Formation of ZnTe:Cu/Ti Contacts at High Temperature for CdS/CdTe Devices: Preprint
We study the performance of CdS/CdTe thin-film devices contacted with ZnTe:Cu/Ti of various thickness at a higher-than-optimum temperature of {approx}360 C. At this temperature, optimum device performance requires the same thickness of ZnTe:Cu as for similar contacts formed at a lower temperature of 320 C. C-V analysis indicates that a ZnTe:Cu layer thickness of {approx}< 0.5 mu m does not yield the degree of CdTe net acceptor concentration necessary to reduce space charge width to its optimum value for n-p device operation. The thickest ZnTe:Cu layer investigated (1 mu m) yields the highest CdTe net acceptor concentration, lowest value of Jo, and highest Voc. However, performance is limited for this device by poor fill factor. We suggest poor fill factor is due to Cu-related acceptors compensating donors in CdS.
Gessert, T. A.; Asher, S.; Johnston, S.; Duda, A.; Young, M. R.; Moriarty, T.
Formation of ZnTe:Cu/Ti Contacts at High Temperature for CdS/CdTe Devices (Presentation)
The conclusions of this report are that Cu diffusion from a ZnTe:Cu contact causes good and bad things. The good (Cu in CdS < low 10{sup 18} cm{sup -3})--increase in CdTe N{sub A}-N{sub D} that leads to V{sub oc} and FF improvement. The bad (Cu in CdS > low 10{sup 18} cm{sup -3})--(1) possibly decreased of shunt resistance (?); (2) depletion width in CdTe can become too narrow for optimum current collection at J{sub MPP}; (3) donor reduction in CdS (significant FF loss in LIV); and (4) excessive Cu diffusion into CdS readily observed by red-light bias QE.
Exciton spectroscopy on single CdSe/ZnSe quantum dot photodiodes
We have investigated the properties of neutral and charged excitons in single CdSe/ZnSe QD photodiodes by @m-photoluminescence spectroscopy. By applying a bias voltage, we have been able to control the number of electrons in a single QD by shifting the ... Keywords: CdSe quantum dots, Photodiode, Stark effect
S. Michaelis de Vasconcellos; A. Pawlis; C. Arens; M. Panfilova; A. Zrenner; D. Schikora; K. Lischka
Long Electron-Hole Separation of ZnO-CdS Core-Shell Quantum Dots
The tunability of electronic and optical properties of semiconductor nanocrystal quantum dots (QDs) has been an important subject in nanotechnology. While control of the emission property of QDs in wavelength has been studied extensively, control of the emission lifetime of QDs has not been explored in depth. In this report, ZnO-CdS core-shell QDs were synthesized in a two-step process, in which we initially synthesized ZnO core particles, and then stepwise slow growth of CdS shells followed. The coating of a CdS shell on a ZnO core increased the exciton lifetime more than 100 times that of the core ZnO QD, and the lifetime was further extended as the thickness of shell increased. This long electron-hole recombination lifetime is due to a unique staggered band alignment between the ZnO core and CdS shell, so-called type II band alignment, where the carrier excitation holes and electrons are spatially separated at the core and shell, and the exciton lifetime becomes extremely sensitive to the thickness of the shell. Here, we demonstrated that the emission lifetime becomes controllable with the thickness of the shell in ZnO-CdS core-shell QDs. The longer excitonic lifetime of type II QDs could be beneficial in fluorescence-based sensors, medical imaging, solar cells photovoltaics, and lasers.
Xu, F.; Volkov, V.; Zhu, Y.; Bai, H.; Rea, A.; Valappil, N.V.; Su, W.; Gao, X.; Kuskovsky, I.L.; Matsui, H.
Luminescence of CdSe/ZnS quantum dots infiltrated into an opal matrix
SciTech Connect
The effect of the photonic band gap in the photonic crystal, the synthesized SiO{sub 2} opal with embedded CdSe/ZnS quantum dots, on its luminescence in the visible spectral region is studied. It is shown that the position of the photonic band gap in the luminescence and reflectance spectra for the infiltrated opal depends on the diameter of the constituent nanospheres and on the angle of recording the signal. The optimal conditions for embedding the CdSe/ZnS quantum dots from the solution into the opal matrix are determined. It is found that, for the opal-CdSe/ZnS nanocomposites, the emission intensity decreases and the luminescence decay time increases in the spatial directions, in which the spectral positions of the photonic band gap and the luminescence peak of the quantum dots coincide.
Gruzintsev, A. N. [Russian Academy of Sciences, Institute of Microelectronics Technology and Ultra-High-Purity Materials (Russian Federation)], E-mail: email@example.com; Emelchenko, G. A.; Masalov, V. M. [Russian Academy of Sciences, Institute of Solid State Physics (Russian Federation); Yakimov, E. E. [Russian Academy of Sciences, Institute of Microelectronics Technology and Ultra-High-Purity Materials (Russian Federation); Barthou, C.; Maitre, A. [Institut des NanoSciences (France)
Epitaxial growth and photochemical annealing of graded CdS/ZnS shells on colloidal CdSe nanorods
We report the preparation and structural characterization of core/shell CdSe/CdS/ZnS nanorods. A graded shell of larger band gap is grown around CdSe rods using trioctylphosphine oxide as a surfactant. Interfacial segregation is used to preferentially deposit CdS near the core, providing relaxation of the strain at the core/shell interface. The reported synthesis allows for variation of the shell thickness between one and six monolayers, on core nanorods ranging from aspect ratios of 2:1 to 10:1. After an irreversible photochemical annealing process, the core/shell nanorods have increased quantum efficiencies and are stable in air under visible or UV excitation. In addition to their robust optical properties, these samples provide an opportunity for the study of the evolution of epitaxial strain as the shape of the core varies from nearly spherical to nearly cylindrical.
Manna, Liberato; Scher, Erik C.; Li, Liang-shi; Alivisatos, A. Paul
Pressure Dependence of Creep in Zn and Cd
Bending creep in Zn is reported as a function of hydrostatic confining pressureP up to 8 kbars. The ratio of activation volume for creep to atomic volume
K. L. DeVries; P. Gibbs
Effects of Cu Diffusion from ZnTe:Cu/Ti Contacts on Carrier Lifetime of CdS/CdTe Thin Film Solar Cells: Preprint
We study the performance of CdS/CdTe thin film PV devices processed with a ZnTe:Cu/Ti contact to investigate how carrier lifetime in the CdTe layer is affected by Cu diffusion from the contact.
Gessert, T. A.; Metzger, W. K.; Asher, S. E.; Young, M. R.; Johnston, S.; Dhere, R. G.; Duda, A.
Bright CdSe quantum dot inserted in single ZnSe nanowires
We report the evidence of CdSe quantum dot (QD) insertion in single defect-free ZnSe nanowire. These nanowires have been grown by molecular beam epitaxy in vapour-liquid-solid growth mode catalysed with gold particles. We developed a two-step process ... Keywords: �PL, Antibunching, CdSe, Correlation measurement, Micro photoluminescence, Polarisation, Single NW, Single QD, Single nanowire, Single nanowire heterostructures, Single quantum dot, TRPL, Time-resolved photoluminescence, Two-step process, ZnSe
A. Tribu; G. Sallen; T. Aichele; C. Bougerol; R. Andr�; J. P. Poizat; S. Tatarenko; K. Kheng
FINAL REPORT OF RESEARCH ON CuxS/ (Cd,Zn)S PHOTOVOLTAIC SOLAR ENERGY CONVERTERS 3/77 - 9/79
Cu X S/(Cd,Zn)S PHOTOVOLTAIC SOLAR ENERGY CONVERTERS 3/77 -of Research on Photovoltaic Solar Energy Converters CuxSI(Cd
Chin, B.L.
Detector Performance of Ammonium-Sulfide-Passivated CdZnTe and CdMnTe Materials
Dark currents, including those in the surface and bulk, are the leading source of electronic noise in X-ray and gamma detectors, and are responsible for degrading a detector's energy resolution. The detector material itself determines the bulk leakage current; however, the surface leakage current is controllable by depositing appropriate passivation layers. In previous research, we demonstrated the effectiveness of surface passivation in CZT (CdZnTe) and CMT (CdMnTe) materials using ammonium sulfide and ammonium fluoride. In this research, we measured the effect of such passivation on the surface states of these materials, and on the performances of detectors made from them.
Kim, K.H.; Bolotnikov, A.E.; Camarda, G.S.; Marchini, L.; Yang, G.; Hossain, A.; Cui, Y.; Xu, L.; and James, R.B.
Excitons in single and double GaAs/AlGaAs/ZnSe/Zn(Cd)MnSe heterovalent quantum wells
Exciton photoluminescence spectra, photoluminescence excitation spectra, and magnetophotoluminescence spectra of single (GaAs/AlGaAs/ZnMnSe) and double (GaAs/AlGaAs/ZnSe/ZnCdMnSe) heterovalent quantum wells formed by molecular beam epitaxy are studied. It is shown that the exciton absorption spectrum of such quantum wells mainly reproduces the resonant exciton spectrum expected for usual quantum wells with similar parameters, while the radiative exciton recombination have substantial distinctions, in particular the additional localization mechanism determined by defects generated by heterovalent interface exists. The nature of these localization centers is not currently clarified; their presence leads to broadening of photoluminescence lines and to an increase in the Stokes shift between the peaks of luminescence and absorption, as well as determining the variation in the magnetic g factor of bound exciton complexes.
Toropov, A. A., E-mail: firstname.lastname@example.com; Kaibyshev, V. Kh.; Terent'ev, Ya. V.; Ivanov, S. V.; Kop'ev, P. S. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
Comparison of CdTe and CdZnTe Detectors for Field Determination of Uranium Isotopic Enrichments
A performance comparison of a CdTe and a CdZnTe detector when exposed to uranium samples of various isotopic enrichments has been performed. These high-resolution detectors can assist in the rapid determination of uranium isotopic content of illicit material. Spectra were recorded from these room temperature semiconductor detectors with a portable multi-channel analyzer, both in the laboratory and in a field environment. Both detectors were operated below ambient temperature using the vendor supplied thermoelectric coolers. Both detectors had nominally the same active volume (18 mm3 for the CdZnTe and 25 mm3 for the CdTe detector) and resolution. Spectra of samples of known isotopic content were recorded at fixed geometries. An evaluation of potential signature g rays for the detection of enriched uranium was completed. Operational advantages and disadvantages of each detector are discussed. There is a need to improve the detection sensitivity during the interdiction of special nuclear materials (SNM) for increased homeland protection. It is essential to provide additional tools to first responders and law enforcement personnel for assessing nuclear and radiological threats.
Hofstetter, KJ
EGS4 calculations for a Cd-Zn-Te detector to measure synchrotron radiation at PEP-II
Calculations have been performed with the EGS4 Code System for a CdZnTe semiconductor detector to be used in background studies of synchrotron radiation at PEP-II. The simulations take into account K-shell fluorescent-photon production in a CdZnTe mixture, electron-hole pair collection and electronic-noise broadening. The results are compared with measurements made with encapsulated {sup 241}Am, {sup 133}Ba and {sup 109}Cd sources.
Nelson, W.R. [Stanford Univ., CA (US). Stanford Linear Accelerator Center; Borak, T.; Malchow, R.; Toki, W. [Colorado State Univ., Fort Collins, CO (US); Kadyk, J. [Lawrence Berkeley National Lab., CA (US)
EGS4 CALCULATIONS FOR A Cd-Zn-Te DETECTOR TO? y MEASURE SYNCHROTRON RADIATION AT PEP-II
Calculations have been performed with the EGS4 Code System for a CdZnTe semiconductor detector to be used in background studies of synchrotron radiation at PEP-II. The simulations take into account K-shell uorescent-photon production in a CdZnTe mixture, electron-hole pair collection and electronic-noise broadening. The results are compared with measurements made with encapsulated 241 Am, 133 Ba and 109 Cd sources.
W. R. Nelson; T. Borak; R. Malchow; W. Toki; J. Kadyk
CdTe and Cd0.9Zn0.1Te Crystal Growth and Characterization for Nuclear Spectrometers
Large volume single crystals of CdTe and Cd0.9Zn0.1Te (CZT) have been grown by a controlled vertical Bridgman technique using in-house zone refined precursors and characterized through structural, electrical, optical, and spectroscopic methods. The grown crystals (diameter greater than or equal to 2.5 cm and length >10 cm) have shown promising characteristics for high-resolution room temperature solid-state radiation detectors due to their high resistivity (~1010 -cm for CdTe, and >1011 -cm for CZT) and good charge transport properties [ e ~ (2-5)x10-3 cm2/V]. The fabricated detectors in planar single element and Frisch collar configurations have shown very low leakage currents and high count rates for various sources, including Am-241, and Cs-137. The grown crystals have been further characterized by X-ray diffraction (XRD), infrared spectroscopy (IR), and transmission two-modulator generalized ellipsometry (2-MGE). Details of the CdTe and CZT characterization results, detector fabrication steps, and testing with radiation sources are presented. The CdTe and CZT crystals have shown high prospects for low power rating solid-state nuclear spectrometers and medical imaging devices.
Mandal, Krishna [EIC Laboratories, Inc.; Kang, Sung Hoon [EIC Laboratories, Inc.; Choi, Michael [EIC Laboratories, Inc.; Wright, Gomez W [ORNL; Jellison Jr, Gerald Earle [ORNL
Characterization of Heterogeneities in Detector-Grade CdZnTe Crystals
Synthetic Cd{sub 1-x}ZnxTe or 'CZT' crystals are highly suitable for g-spectrometers operating at room temperature. Secondary phases (SP) within CZT, presumed to be Te metal, have detrimental impacts on the charge collection efficiency of fabricated device. Using analytical techniques rather than arbitrary theoretical definitions, we identify two SP morphologies: (i) many void, 20-{mu}m 'negative' crystals with 65-nm nanoparticle residues of Si, Cd, Zn, and Te and (ii) 20-{mu}m hexagonal-shaped bodies, which are composites of metallic Te layers with cores of amorphous and polycrystalline CZT material that surround the voids.
Duff, M.; Hunter, D; Burger, A; Groza, M; Buliga, V; Bradley, J; Graham, G; Dai, Z; Lanzirotti, A; et. al.
Electrical Properties of Point Defects in CdS and ZnS Thin-film PV ...
... Electrical Properties of Point Defects in CdS and ZnS Thin-film PV Buffer ... but whose band gap is too small for complete transparency to solar radiation.
Experimental study of double-{beta} decay modes using a CdZnTe detector array
An array of sixteen 1 cm{sup 3} CdZnTe semiconductor detectors was operated at the Gran Sasso Underground Laboratory (LNGS) to further investigate the feasibility of double-{beta} decay searches with such devices. As one of the double-{beta} decay experiments with the highest granularity the 4x4 array accumulated an overall exposure of 18 kg days. The setup and performance of the array is described. Half-life limits for various double-{beta} decay modes of Cd, Zn, and Te isotopes are obtained. No signal has been found, but several limits beyond 10{sup 20} years have been performed. They are an order of magnitude better than those obtained with this technology before and comparable to most other experimental approaches for the isotopes under investigation. An improved limit for the {beta}{sup +}/EC decay of {sup 120}Te is given.
Dawson, J. V. [Laboratoire Astroparticule et Cosmologie, 10 rue Alice Domon et Leonie Duquet, F-75205 Paris (France); Goessling, C.; Koettig, T.; Muenstermann, D.; Rajek, S.; Schulz, O. [Lehrstuhl fuer Experimentelle Physik IV, Technische Universitaet Dortmund, Otto-Hahn Str. 4, D-44227 Dortmund (Germany); Janutta, B.; Zuber, K. [Institut fuer Kern- und Teilchenphysik, Technische Universitaet Dresden, Zellescher Weg 19, D-01069 Dresden (Germany); Junker, M. [Laboratori Nazionali del Gran Sasso, Assergi (Italy); Reeve, C. [University of Sussex, Falmer, Brighton BN1 9QH (United Kingdom); Wilson, J. R. [University of Oxford, Denys Wilkinson Building, Keble Road, Oxford OX1 3RH (United Kingdom)
Carrier dynamics and activation energy of CdTe quantum dots in a Cd{sub x}Zn{sub 1-x}Te quantum well
We investigate the optical properties of CdTe quantum dots (QDs) in a Cd{sub 0.3}Zn{sub 0.7}Te quantum well (QW) grown on GaAs (100) substrates. Carrier dynamics of CdTe/ZnTe QDs and quantum dots-in-a-well (DWELL) structure is studied using time-resolved photoluminescence (PL) measurements, which show the longer exciton lifetime of the DWELL structure. The activation energy of the electrons confined in the DWELL structure, as obtained from the temperature-dependent PL spectra, was also higher than that of electrons confined in the CdTe/ZnTe QDs. This behavior is attributed to the better capture of carriers into QDs within the surrounding QW.
Han, W. I.; Lee, J. H.; Yu, J. S.; Choi, J. C. [Department of Physics, Yonsei University, Wonju 220-710 (Korea, Republic of); Lee, H. S. [Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)
Removal of Zn or Cd and cyanide from cyanide electroplating wastes
DOE Patents (OSTI)
A method is described for the efficient stripping of stable complexes of a selected quaternary amine and a cyanide of Zn or Cd. An alkali metal hydroxide solution such as NaOH or KOH will quantitatively strip a pregnant extract of the quaternary ammonium complex of its metal and cyanide content and regenerate a quaternary ammonium hydroxide salt which can be used for extracting further metal cyanide values.
Moore, Fletcher L. (Knoxville, TN)
Quantum-confinement versus strain effects in the Zn(Cd)S(Se) family of superlattices
We have investigated the quantum-confinement (QC) and strain effects on the band structures of the Zn(Cd)S(Se) family of binary-compound superlattices (SLs); particularly those with common anions and with common cations. All the studied cases of SLs ... Keywords: 71.20.Nr, 71.55.Gs, 73.21.Fg, 73.61.Ga, II-VI semiconductors, Semiconductor compounds, Superlattices
Ihab M. Obaidat; Nacir Tit
Band offsets for mismatched interfaces: The special case of ZnO on CdTe (001)
High-quality planar interfaces between ZnO and CdTe would be useful in optoelectronic applications, but appear difficult to achieve given the rather different crystal structures (CdTe is zinc blende with cubic lattice constant a = 6.482 �, ZnO is hexagonal wurtzite with a = 3.253 � and c = 5.213 �.) However, ZnO has been reported to occur in some epitaxially stabilized films in the zinc blende structure with an fcc primitive lattice constant close to the hexagonal a value. Observing that this value equals half of the CdTe cubic lattice constant to within 1%, we propose that (001)-oriented cubic ZnO films could be grown epitaxially on a CdTe (001) surface in an R45� ?2??2 configuration. Many terminations and alignments (in-plane fractional translations) are possible, and we describe density-functional total-energy electronic-structure calculations on several configurations to identify the most likely form of the interface, and to predict valence-band offsets between CdTe and ZnO in each case. Growth of ZnO on Te-terminated CdTe (001) is predicted to produce small or even negative (CdTe below ZnO) valence band offsets, resulting in a Type I band alignment. Growth on Cd-terminated CdTe is predicted to produce large positive offsets for a type II alignment as needed, for example, in solar cells. We also describe recent experiments that corroborate some of these predictions.
Jaffe, John E.; Kaspar, Tiffany C.; Droubay, Timothy; Varga, Tamas
Synchrotron radiation x-ray absorption fine-structure and Raman studies on CdZnTe ternary alloys
The synchrotron radiation (SR) X-ray absorption fine-structure spectroscopy (XAFS) technology has been employed to obtained Zn K-edge absorption spectra for Cd1[subscript 1-x]Zn[subscript x]Te alloy with x = 0.03, 0.10, ...
Becla, Piotr
Electrical Characterization of Cu Composition Effects in CdS/CdTe Thin-Film Solar Cells with a ZnTe:Cu Back Contact: Preprint
We study the effects of Cu composition on the CdTe/ZnTe:Cu back contact and the bulk CdTe. For the back contact, its potential barrier decreases with Cu concentration while its saturation current density increases. For the bulk CdTe, the hole density increases with Cu concentration. We identify a Cu-related deep level at {approx}0.55 eV whose concentration is significant when the Cu concentration is high. The device performance, which initially increases with Cu concentration then decreases, reflects the interplay between the positive influences and negative influences (increasing deep levels in CdTe) of Cu.
Li, J. V.; Duenow, J. N.; Kuciauskas, D.; Kanevce, A.; Dhere, R. G.; Young, M. R.; Levi, D. H.
Effect of heteroboundary spreading on the properties of exciton states in Zn(Cd)Se/ZnMgSSe quantum wells
Exciton states in Zn(Cd)Se/ZnMgSSe quantum wells with different diffusion spreading of interfaces are studied by optical spectroscopy methods. It is shown that the emission spectrum of quantum wells at low temperatures is determined by free excitons and bound excitons on neutral donors. The nonlinear dependence of the stationary photoluminescence intensity on the excitation power density and the biexponential luminescence decay are explained by the neutralization of charged defects upon photoexcitation of heterostructures. With the stationary illumination on, durable (about 40 min) reversible changes in the reflection coefficient near the exciton resonances of quantum wells are observed. It is shown that, along with the shift of exciton levels, the spreading of heteroboundaries leads to three effects: an increase in the excitonphonon interaction, an increase in the energy shift between the emission lines of free and bound excitons, and a decrease in the decay time of exciton luminescence in a broad temperature range. The main reasons for these effects are discussed.
Adiyatullin, A. F., E-mail: email@example.com; Belykh, V. V.; Kozlovsky, V. I.; Krivobok, V. S., E-mail: firstname.lastname@example.com; Martovitsky, V. P.; Nikolaev, S. N. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)
Effect of Heating, Ion-Beam Milling, and ZnTe:Cu Deposition on the Spectroscopic Cathodoluminescence of Polycrystalline CdTe: Preprint
Presented at the 2001 NCPV Program Review Meeting: Cathodoluminescence used to study evolution of electro-optical properties of back surface of CdS/CdTe during initial steps of fabricating NREL ZnTe:Cu contact.
Gessert, T. A.; Romero, M. J.; Asher, S. E.
Light-Induced Tellurium Enrichment on CdZnTe Crystal Surfaces Detected by Raman Spectroscopy
CdZnTe (CZT) crystals can be grown under controlled conditions to produce high-quality crystals to be used as room-temperature radiation detectors. Even the best crystal growth methods result in defects, such as tellurium secondary phases, that affect the crystal's performance. In this study, CZT crystals were analyzed by micro-Raman spectroscopy. The growth of Te rich areas on the surface was induced by low-power lasers. The growth was observed versus time with low-power Raman scattering and was observed immediately under higher-power conditions. The detector response was also measured after induced Te enrichment.
Hawkins, Samantha A.; Villa-Aleman, Eliel; Duff, Martine C.; Hunter, Doug B.; Burger, Arnold; Groza, Michael; Buliga, Vladimir; Black, David R. (SRNL); (NIST); (Fisk U)
POLARIZATION STUDIES OF CdZnTe DETECTORS USING SYNCHROTRON X-RAY RADIATION.
New results on the effects of small-scale defects on the charge-carrier transport in single-crystal CdZnTe (CZT) material were produced. We conducted detailed studies of the role of Te inclusions in CZT by employing a highly collimated synchrotron x-ray radiation source available at Brookhaven's National Synchrotron Light Source (NSLS). We were able to induce polarization effects by irradiating specific areas with the detector. These measurements allowed the first quantitative comparison between areas that are free of Te inclusions and those with a relatively high concentration of inclusions. The results of these polaration studies will be reported.
Synchrotron X-ray Based Characterization of CdZnTe Crystals
Synthetic CdZnTe (CZT) crystals can be used for the room temperature-based detection of gamma radiation. Structural/morphological heterogeneities within CZT, such as secondary phases (namely, precipitates and inclusions), can negatively affect detector performance. We used a synchrotron-based x-ray technique, specifically extended x-ray absorption fine-structure (EXAFS) spectroscopy, to determine whether there are differences on a local structural level between intact CZT of high and low radiation detector performance. These studies were complemented by data on radiation detector performance and transmission infrared (IR) imaging. The EXAFS studies revealed no detectable local structural differences between the two types of CZT materials.
Duff,M.; Hunter, D.; Nuessle, P.; Black, D.; Burdette, H.; Woicik, J.; Burger, A.; Groza, M.
Effect of Sub-Bandgap Illumination on the Internal Electric Field of CdZnTe
Post-growth manipulation of the internal electric field in CdZnTe crystals using sub-bandgap illumination is measured as a function of temperature through infrared (IR) transmission measurements. Using near sub-bandgap IR illumination, both the optical de-trapping of charge carriers and the reduction in carrier recombination increased the mobility lifetime in the crystal. The increased carrier transport is a direct result of decreased hole and electron trapping in addition to other underlying mechanisms. Concentration of the electric field near the cathode is also observed. We measured the electric field distribution with sub-bandgap illumination as a function of temperature via the Pockels effect.
Washington, A.
Hard x-ray response of a CdZnTe ring-drift detector
We present the results of an experimental study of a special type of CdZnTedetector of hard x and ? rays�a ring-drift detector. The device consists of a double ring electrode structure surrounding a central point anode with a guard plane surrounding the outer anode ring. The detector can be operated in two distinctively different modes of charge collection�pseudohemispherical and pseudodrift. We study the detector response profiles obtained by scanning the focused x-ray beam over the whole detector area
A. Owens; R. den Hartog; F. Quarati; V. Gostilo; V. Kondratjev; A. Loupilov; A. G. Kozorezov; J. K. Wigmore; A. Webb; E. Welter
Reduction of surface leakage current by surface passivation of CdZn Te and other materials using hyperthermal oxygen atoms
Reduction of surface leakage current by surface passivation of Cd.sub.1-x Zn.sub.x Te and other materials using hyperthermal oxygen atoms. Surface effects are important in the performance of CdZnTe room-temperature radiation detectors used as spectrometers since the dark current is often dominated by surface leakage. A process using high-kinetic-energy, neutral oxygen atoms (.about.3 eV) to treat the surface of CdZnTe detectors at or near ambient temperatures is described. Improvements in detector performance include significantly reduced leakage current which results in lower detector noise and greater energy resolution for radiation measurements of gamma- and X-rays, thereby increasing the accuracy and sensitivity of measurements of radionuclides having complex gamma-ray spectra, including special nuclear materials.
Hoffbauer, Mark A. (Los Alamos, NM); Prettyman, Thomas H. (Los Alamos, NM)
Measuring charge trap occupation and energy level in CdSe/ZnS quantum dots using a scanning tunneling microscope
We use a scanning tunneling microscope to probe single-electron charging phenomena in individual CdSe/ZnS (core/shell) quantum dots (QDs) at room temperature. The QDs are deposited on top of a bare Au thin film and form a ...
Bulovic, Vladimir
Characterization of detector grade CdZnTe material from Redlen Technologies
CdZnTe (or CZT) crystals can be used in a variety of detector-type applications. This large band gap material shows great promise for use as a gamma radiation spectrometer. Historically, the performance of CZT has typically been adversely affected by point defects, structural and compositional heterogeneities within the crystals, such as twinning, pipes, grain boundaries (polycrystallinity) and secondary phases (SP). The synthesis of CZT material has improved greatly with the primary performance limitation being attributed to mainly SP. In this presentation, we describe the extensive characterization of detector grade material that has been treated with post growth annealing to remove the SPs. Some of the analytical methods used in this study included polarized, cross polarized and transmission IR imaging, I-V curves measurements, synchrotron X-ray topography and electron microscopy.
Duff, Martine C.; Burger, Arnold; Groza, Michael; Buliga, Vladimir; Bradley, John P.; Dai, Zurong R.; Teslich, Nick; Black, David R.; Awadalla, Salah A.; Mackenzie, Jason; Chen, Henry (Redlen); (SRNL); (LLNL); (NIST); (Fisk U)
Effect of Extended Defects in Planar and Pixelated CdZnTe Detectors
We evaluated a spectroscopy-grade 15 x 15 x 7 mm{sup 3} CdZnTe (CZT) crystal with a high {mu}{tau}-product, > 10{sup -2} cm{sup 2}/V, but impaired by microscopic extended defects, such as walls of dislocations, low-angle and sub-grain boundaries, and Te inclusions. First, we evaluated a planar detector fabricated from this crystal using a Microscale X-ray Detector Mapping (MXDM) technique. Then, we fabricated from the same crystal a pixel detector to study local non-uniformities of the electric field. The measured X-ray response maps confirmed the presence of non-uniformities in the charge transport, and they showed that the global- and local-distortions of the internal E-field correlated to the extended defects and space-charge buildup on the side surfaces.
C Camarda; K Andreini; A Bolotnikov; Y Cui; A Hossain; R Gul; K Kim; L Marchini; L Xu; et al.
Correlations Between Crystal Defects and Performance of CdZnTe Detectors
Poor crystallinity remains a major problem affecting the availability and cost of CdZnTe (CZT) detectors. Point defects are responsible for small gradual charge loss and correlated with the electron clouds' drift times, which allows electronic correction of the output signals to achieve high spectral-resolution even with large-volume CZT detectors. In contrast, extended defects causes significant charge losses, which typically are uncorrelated, and, thus, result in much greater fluctuations of the output signals that cannot be corrected. Although extended defects do not affect all the interaction events, their fraction rapidly increases with the crystal's thickness and volume. In this paper, we summarize our recent results from testing CZT material and detectors that emphasize the particular roles of two types of extended defects, and their contributions to the device's overall performance.
A Bolotnikov; S Babalola; G Camarda; Y Cui; R Gul; S Egarievwe; P Fochuk; M Fuerstnau; J Horace; et al.
Performance Characteristics of Frisch-Ring CdZnTe Detectors
The performance characteristics of Frisch-ring CdZnTe (CZT) detectors are described and compared with other types of CZT devices. The Frisch-ring detector is a bar-shaped CZT crystal with a geometrical aspect ratio of /spl sim/1:2. The side surfaces of the detector are coated with an insulating layer followed by a metal layer deposited directly upon the insulator. The simple design operates as a single-carrier device. Despite the simplicity of this approach, its performance depends on many factors that are still not fully understood. We describe results of testing several detectors fabricated from CZT material produced by different vendors and compare the results with numerical simulations of these devices.
Bolotnikov,A.; Camarda, G.; Carini, G.; Fiederle, M.; Li, L.; McGregor, D.; McNeil, W.; Wright, G.; James, R.
Analytical model for event reconstruction in coplanar grid CdZnTe detectors
Coplanar-grid (CPG) particle detectors were designed for materials such as CdZnTe (CZT) in which charge carriers of only one sign have acceptable transport properties. The presence of two independent anode signals allows for a reconstruction of deposited energy based on the difference between the two signals, and a reconstruction of the interaction depth based on the ratio of the amplitudes of the sum and difference of the signals. Energy resolution is greatly improved by modifying the difference signal with an empirically determined weighting factor to correct for the effects of electron trapping. In this paper is introduced a modified interaction depth reconstruction formula which corrects for electron trapping utilizing the same weighting factor used for energy reconstruction. The improvement of this depth reconstruction over simpler formulas is demonstrated. Further corrections due to the contribution of hole transport to the signals are discussed.
Matthew Fritts; J�rgen Durst; Thomas G�pfert; Thomas Wester; Kai Zuber
Fritts, Matthew; G�pfert, Thomas; Wester, Thomas; Zuber, Kai
Electronic and Optical Properties of Spinel TCOs: Cd2SnO4, Zn2SnO4, and CdIn2O4
Using the band-structure method, we have studied the electronic and optical properties of the transparent conducting oxides SnZn2O4, SnCd2O4, and CdIn2O4. We analyzed the atomic and orbital characters of the band edge states and explained the general trends observed in the fundamental band gap, the optical band gap, the energy difference between the first and the second conduction bands, and the electron effective mass. General rules for designing more efficient transparent conducting oxides are proposed.
Wei, S. H.; Segev, D.
Charge transport properties in CdZnTe detectors grown by the vertical Bridgman technique
Presently, a great amount of effort is being devoted to the development of CdTe and CdZnTe (CZT) detectors for a large variety of applications such as medical, industrial, and space research. We present the spectroscopic properties of some CZT crystals grown by the standard vertical Bridgman method and by the boron oxide encapsulated vertical Bridgman method, which has been recently implemented at IMEM-CNR (Parma, Italy). In this technique, the crystal is grown in an open quartz crucible fully encapsulated by a thin layer of liquid boron oxide. This method prevents contact between the crystal and the crucible, thereby allowing larger single grains with a lower dislocation density to be obtained. Several mono-electrode detectors were realized, with each having two planar gold contacts. The samples are characterized by an active area of about 7 mm x 7 mm and thicknesses ranging from 1 to 2 mm. The charge transport properties of the detectors have been studied by mobility-lifetime ({mu} x {tau}) product measurements, carried out at the European Synchrotron Radiation Facility (Grenoble, France) in the planar transverse field configuration, where the impinging beam direction is orthogonal to the collecting electric field. We have performed several fine scans between the electrodes with a beam spot of 10 {mu}m x 10 {mu}m at various energies from 60 to 400 keV. In this work, we present the test results in terms of the ({mu} x {tau}) product of both charge carriers.
Auricchio, N.; Caroli, E. [INAF/IASF-Bologna, Bologna, 40129 (Italy); Marchini, L.; Zappettini, A. [IMEM-CNR, Parma, 43100 (Italy); Abbene, L. [DIFI, University of Palermo, Palermo, 90128 (Italy); Honkimaki, V. [European Synchrotron Radiation Facility, Grenoble, 38000 (France)
Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films
A method of improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurim-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact.
Gessert, Timothy A. (Conifer, CO)
RG flows and instantons
In these two lectures I discuss RG flow solutions in (1,0) six dimensional supergravity involving SU(2) Yang-Mills instantons. in the conformally flat part of the 6D metric. The solutions interpolate between two (4,0) supersymmetric AdS{sub 3} Multiplication-Sign S{sup 3} backgrounds with different values of AdS{sub 3} and S{sup 3} radii and describe RG flows in the dual 2D SCFT. The flows described are of v.e.v. type, driven by a vacuum expectation value of a (not exactly) marginal operator of dimension 2 in the UV. We give an interpretation of the supergravity solution in terms of the D1/D5 system in type I string theory on K3, whose effective field theory is expected to flow to a (4,0) SCFT in the infrared.
Gava, Edi [INFN, Trieste (Italy)
The Hybridization of CdSe/ZnS Quantum Dot on InGaN Light-Emitting Diodes for Color Conversion
We have demonstrated the fabrication and characterization of hybrid CdSe/ZnS quantum dot (QD)-InGaN blue LEDs. The chemically synthesized red light (lambda = 623 nm) QD solutions with different concentrations were dropped onto the blue InGaN LEDs with ... Keywords: CdSe/ZnS quantum dots, CdSe/ZnS quantum dots (QDs), InGaN quantum well and hybrid LEDs, InGaN quantum well and hybrid light-emitting diodes
Ying-Chih Chen; Chun-Yuan Huang; Yan-Kuin Su; Wen-Liang Li; Chia-Hsien Yeh; Yu-Cheng Lin
The Fate of MAb targeted Cd125mTe/ZnS nanoparaticles in vivo
Nanoparticles (NP) have potential as carriers for drugs and radioisotopes. Quantitative measures of NP biodistribution in vivo are needed to determine the effectiveness of these carriers. We have used a model system of radiolabeled quantum dots to document the competition between efficient vascular targeting and interaction of the NP with the reticuloendothelial (RE) system. We have prepared (125m)Te-labeled CdTe NP that are capped with ZnS. Te-125m has a half-life and decay characteristics very similar to those for (125)I. The synthesized particles are stable in aqueous solution and are derivatized with mercaptoacetic acid and then conjugated with specific antibody. To evaluate specific targeting, we used the monoclonal antibody MAb 201B that binds to murine thrombomodulin expressed in the lumen of lung blood vessels. The MAb-targeted NP were tested for targeting performance in vivo using single-photon emission computed tomography (SPECT)/computed tomography (CT) imaging, tissue autoradiography and standard organ biodistribution techniques. Biodistribution was also determined in mice that had been depleted of phagocytic cells by use of clodronate-loaded liposomes. Cd(125m)Te/ZnS NP coupled with MAb 201B retained radioisotope and antibody activity and accumulated in lung (>400% injected dose [ID]/g) within 1 h of intravenous injection. Control antibody-coupled NP did not accumulate in lung (<10% ID/g) but accumulated in liver and spleen. Images from microSPECT/CT and autoradiography studies of the targeted NP document this specific uptake and demonstrate uniform distribution in lung with minor accumulation in liver and spleen. Within a few hours, a large fraction of lung-targeted NP redistributed to spleen and liver or was excreted. We hypothesized that NP attract phagocytic cells that engulfed and removed them from circulation. This was confirmed by comparing biodistribution of targeted NP in normal mice versus those depleted of phagocytic cells. In mice treated with clodronate liposomes, accumulation of NP in liver was reduced by fivefold, while accumulation in lung at 1 h was enhanced by approximately 50%. By 24 h, loss of the targeted NP from lung was inhibited by several-fold, while accumulation in liver and spleen remained constant. Thus, the treated mice had a much larger accumulation and retention of the NP at the target site and a decrease in dose to other organs except spleen. Nanoparticles composed of CdTe, labeled with (125m)Te and capped with ZnS, can be targeted with MAb to sites in the lumen of lung vasculature. In clodronate-treated mice, which have a temporary depletion of phagocytic cells, accumulation in liver was reduced dramatically, whereas that in spleen was not. The targeting to lung was several-fold more efficient in clodronate-treated mice due to larger initial accumulation and better retention of the MAb-targeted NP at that site. This model system indicates that targeting of NP preparations is a competition between the effectiveness of the targeting agent and the natural tendency for RE uptake of the particles. Temporary inhibition of the RE system may enhance the usefulness of NP for drug and radioisotope delivery.
Kennel, Steve J [ORNL; Woodward, Jonathan [ORNL; Rondinone, Adam Justin [ORNL; Wall, Jonathan [ORNL; Mirzadeh, Saed [ORNL
Self-assembled formation and transformation of In/CdZnTe(110) nano-rings into camel-humps
We used in situ scanning tunneling microscopy to monitor in real time the formation of nano-rings at the molecular beam epitaxially grown In/CdZnTe(110) surface, and Auger electron spectroscopy to explore the corresponding compositional changes. In-diffusion of In and segregation of Cd to the surface in course of annealing lead to a formation of elliptically distorted nano-rings, elongated along the fast [110] diffusion direction. Exacerbated diffusion anisotropy in the liquid state, at temperatures above the melting point of In, further distorts the nano-rings into a camel-hump shape.
Cohen-Taguri, G. [School of Mechanical Engineering and Materials and Nanotechnologies Program, Faculty of Engineering, Tel Aviv University, Tel Aviv 69978 (Israel); Ruzin, A. [School of Electrical Engineering, Faculty of Engineering, Tel Aviv University, Tel Aviv 69978 (Israel); Goldfarb, I. [School of Mechanical Engineering and Materials and Nanotechnologies Program, Faculty of Engineering, Tel Aviv University, Tel Aviv 69978 (Israel); Research Center for Nanoscience and Nanotechnology, Tel Aviv University, Tel Aviv 69978 (Israel)
Optimization of a parallel hole collimator/CdZnTe gamma-camera architecture for scintimammography
Purpose: Small field-of-view CdZnTe (CZT) gamma cameras are increasingly studied for breast lesion detection to complement mammography or ultrasonographic findings. However, in classical collimation configurations, they remain limited by the trade-off between spatial resolution and sensitivity. The HiSens architecture was proposed to overcome these limitations. Using an accurate 3D localization of the interactions inside the detector, this architecture leads to a gain in sensitivity without loss in spatial resolution. In this article, the relevance of the HiSens architecture for planar scintimammography is studied. Methods: A detective quantum efficiency (DQE) computation method is developed and used to optimize the dimensioning of a parallel hole collimator dedicated to scintimammography. Based on the DQE curves, the impact of the collimator-to-detector distance is studied. Two algorithms are proposed to combine data acquired with different collimator-to-detector distances. Results: It is shown that CZT detector virtual pixelization increases system sensitivity by 3.3 while preserving a standard LEHR spatial resolution. The introduction of a gap between the CZT detector and the collimator is useful to modulate the DQE curve shape. The combination of data acquired using different gaps in the image formation process leads to enhanced restoration of the frequency content of the images, resulting in image contrast and spatial resolution improvements. Conclusions: Acquisition duration or injected activity could be markedly reduced if the HiSens architecture with an appropriate collimator-detector gap were used.
Robert, Charlotte; Montemont, Guillaume; Rebuffel, Veronique; Verger, Loieck; Buvat, Irene [CEA-LETI-MINATEC, F38054 Grenoble (France); IMNC-UMR 8165 CNRS, Universites Paris 7 et 11, Batiment 440, 91406 Orsay (France)
X-ray Topography to Characterize Surface Damage on CdZnTe Crystals
Synthetic CdZnTe or 'CZT' crystals can be used for room temperature detection of {gamma}-radiation. Structural/morphological heterogeneities within CZT, such as twinning, secondary phases (often referred to as inclusions or precipitates), and poly-crystallinity can affect detector performance. As part of a broader study using synchrotron radiation techniques to correlate detector performance to microstructure, x-ray topography (XRT) has been used to characterize CZT crystals. We have found that CZT crystals almost always have a variety of residual surface damage, which interferes with our ability to observe the underlying microstructure for purposes of crystal quality evaluation. Specific structures are identifiable as resulting from fabrication processes and from handling and shipping of sample crystals. Etching was found to remove this damage; however, our studies have shown that the radiation detector performance of the etched surfaces was inferior to the as-polished surface due to higher surface currents which result in more peak tailing and less energy resolution. We have not fully investigated the effects of the various types of inducible damage on radiation detector performance. (authors)
Black, David; Woicik, Joseph [NIST, Gaithersburg, Maryland (United States); Duff, Martine C.; Hunter, Douglas B. [SRNL, Aiken, South Carolina (United States); Burger, Arnold; Groza, Michael [Fisk University, Nashville, Tennessee (United States)
Effects of Te inclusions on the performance of CdZnTe radiation detectors
Te inclusions existing at high concentrations in CdZnTe (CZT) material can degrade the performance of CZT detectors. These microscopic defects trap the free electrons generated by incident radiation, so entailing significant fluctuations in the total collected charge and thereby strongly affecting the energy resolution of thick (long-drift) detectors. Such effects were demonstrated in thin planar detectors, and, in many cases, they proved to be the dominant cause of the low performance of thick detectors, wherein the fluctuations in the charge losses accumulate along the charge's drift path. We continued studying this effect using different tools and techniques. We employed a dedicated beamline recently established at BNL's National Synchrotron Light Source for characterizing semiconductor radiation detectors, along with an IR transmission microscope system, the combination of which allowed us to correlate the concentration of defects with the devices performances. We present here our new results from testing over 50 CZT samples grown by different techniques. Our goals are to establish tolerable limits on the size and concentrations of these detrimental Te inclusions in CZT material, and to provide feedback to crystal growers to reduce their numbers in the material.
Bolotnikov,A.E.; Abdul-Jabber, N. M.; Babalola, O. S.; Camarda, G. S.; Cui, Y.; Hossain, A. M.; Jackson, E. M.; Jackson, H. C.; James, J. A.; Kohman, K. T.; Luryi, A. L.; James, R. B.
Synthetic CdZnTe or 'CZT' crystals can be used for room temperature detection of {gamma}-radiation. Structural/morphological heterogeneities within CZT, such as twinning, secondary phases (often referred to as inclusions or precipitates), and poly-crystallinity can affect detector performance. As part of a broader study using synchrotron radiation techniques to correlate detector performance to microstructure, x-ray topography (XRT) has been used to characterize CZT crystals. We have found that CZT crystals almost always have a variety of residual surface damage, which interferes with our ability to observe the underlying microstructure for purposes of crystal quality evaluation. Specific structures are identifiable as resulting from fabrication processes and from handling and shipping of sample crystals. Etching was found to remove this damage; however, our studies have shown that the radiation detector performance of the etched surfaces was inferior to the as-polished surface due to higher surface currents which result in more peak tailing and less energy resolution. We have not fully investigated the effects of the various types of inducible damage on radiation detector performance.
Black, David; Woicik, Joseph; Duff, Martine C.; Hunter, Douglas B.; Burger, Arnold; Groza, Michael (SRNL); (SBU); (NIST); (Fisk U)
Effects of Bulk and Surface Conductivity on the Performance of CdZnTe Pixel Detectors
We studied the effects of bulk and surface conductivity on the performance of high-resistivity CdZnTe (CZT) pixel detectors with Pt contacts. We emphasize the difference in mechanisms of the bulk and surface conductivity as indicated by their different temperature behaviors. In addition, the existence of a thin (10-100 A) oxide layer on the surface of CZT, formed during the fabrication process, affects both bulk and surface leakage currents. We demonstrate that the measured I-V dependencies of bulk current can be explained by considering the CZT detector as a metal-semiconductor-metal system with two back-to-back Schottky-barrier contacts. The high surface leakage current is apparently due to the presence of a low-resistivity surface layer that has characteristics which differ considerably from those of the bulk material. This surface layer has a profound effect on the charge collection efficiency in detectors with multi-contact geometry; some fraction of the electric field lines originated on the cathode int...
Bolotnikov, A E; Cook, W R; Harrison, F A; Kuvvetli, I; Schindler, S; Bolotnikov, Aleksey E.; Cook, Walter R.; Harrison, Fiona A.; Kuvvetli, Irfan; Schindler, Stephen M.
Laser irradiation effects on the CdTe/ZnTe quantum dot structure studied by Raman and AFM spectroscopy
Micro-Raman spectroscopy has been applied to investigate the impact of laser irradiation on semiconducting CdTe/ZnTe quantum dots (QDs) structures. A reference sample (without dots) was also studied for comparison. Both samples were grown by molecular beam epitaxy technique on the p-type GaAs substrate. The Raman spectra have been recorded for different time of a laser exposure and for various laser powers. The spectra for both samples exhibit peak related to the localized longitudinal (LO) ZnTe phonon of a wavenumber equal to 210 cm{sup -1}. For the QD sample, a broad band corresponding to the LO CdTe phonon related to the QD-layer appears at a wavenumber of 160 cm{sup -1}. With increasing time of a laser beam exposure and laser power, the spectra get dominated by tellurium-related peaks appearing at wavenumbers around 120 cm{sup -1} and 140 cm{sup -1}. Simultaneously, the ZnTe surface undergoes rising damage, with the formation of Te aggregates at the pinhole edge as reveal atomic force microscopy observations. Local temperature of irradiated region has been estimated from the anti-Stokes/Stokes ratio of the Te modes intensity and it was found to be close or exceeding ZnTe melting point. Thus, the laser damage can be explained by the ablation process.
Zielony, E.; Placzek-Popko, E.; Henrykowski, A.; Gumienny, Z.; Kamyczek, P.; Jacak, J. [Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland); Nowakowski, P.; Karczewski, G. [Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warsaw (Poland)
Investigation of the Effect of I-ZnO Window Layer on the Device Performance of the Cd-Free CIGS Based Solar Cells (Poster)
This research work focuses on preparing Cd-free CIGS based solar cells with intrinsic high resistivity ZnO (I-ZnO) films deposited by metal-organic chemical vapor deposition (MOCVD) technique at different deposition substrate temperature and I-ZnO film thickness, and the effect of the prior treatment of CIGS films by ammonium hydroxide (NH4OH) diluted solution on the device performance.
Hasoon, F. S.; al-Thani, H. A.; Li, X.; Kanevce, A.; Perkins, C.; Asher, S.
Investigation of the Effect of I-ZnO Window Layer on the Device Performance of the Cd-Free CIGS Based Solar Cells: Preprint
This paper focuses on preparing Cd-free, CIGS-based solar cells with intrinsic high resistivity ZnO (I-ZnO) films deposited by metal-organic chemical vapor deposition (MOCVD) technique at different deposition substrate temperature and I-ZnO film thickness, and the effect of the prior treatment of CIGS films by ammonium hydroxide (NH4OH) diluted solution on the device performance.
Hasoon, F. S.; Al-Thani, H. A.; Li, X.; Kanevce, A.; Perkins, C.; Asher, S.
The Structural Transition Behavior of CdSe/ZnS Core/shell Quantum Dots under High Pressure
The structural phase transition of CdSe/ZnS core/shell quantum dots (QDs) has been studied by in situ angle-dispersive X-ray diffraction under high pressure up to 53.6?GPa. The CdSe core transforms from wurtzite to rock-salt structure near 6.3?GPa and then to Cmcm or distorted Cmcm structure probably occurs at 45.1?GPa which has not been observed in CdSe nanomaterials before. The critical pressure from wurtzite to rock-salt and the bulk modulus of rock-salt phase are much higher than those for bulky and uncapped nanoparticle CdSe. The released sample can be kept in rock-salt phase for a certain time, verified by photoluminescence (PL) spectra, quite different from the reversible transition for pure CdSe. A reasonable interpretation of the experimental phenomena is given by comparing the bulk modulus of the core and shell and studying the stress sate of the core after decompression. Our study suggests that capping a hard shell is an effective approach to quench the high pressure phase of nanomaterial with a reversible phase transition.
Z Li; L Wang; B Liu; J Wang; B Liu; Q Li; B Zou; T Cui; Y Meng; H Mao
Point Defects in Pb-, Bi-, and In-Doped CdZnTe Detectors:Deep-Level Transient Spectroscopy (DLTS) Measurements
We studied, by current deep-level transient spectroscopy (I-DLTS), point defects induced in CdZnTe detectors by three dopants: Pb, Bi, and In. Pb-doped CdZnTe detectors have a new acceptor trap at around 0.48 eV. The absence of a V{sub Cd} trap suggests that all Cd vacancies are compensated by Pb interstitials after they form a deep-acceptor complex [[Pb{sub Cd}]{sup +}-V{sub Cd}{sup 2-}]{sup -}. Bi-doped CdZnTe detectors had two distinct traps: a shallow trap at around 36 meV and a deep donor trap at around 0.82 eV. In detectors doped with In, we noted three well-known traps: two acceptor levels at around 0.18 eV (A-centers) and 0.31 eV (V{sub Cd}), and a deep trap at around 1.1 eV.
Bolotnikov A.; GUL, R.; KEETER, K.; RODRIGUEZ, R.; BOLOTNIKOV, A.E.; HOSSAIN, A.; CAMARDA, G.S.; KIM, K.H.; YANG, Y.; CUI, Y.; CARCELEN, V.; FRANC, J.; LI, Z.; JAMES, R.B.
Surface Enhanced Raman Spectroscopy of Pyridine on CdSe/ZnBeSe Quantum Dots Grown by MBE
Using Surface Enhanced Raman Spectroscopy (SERS), we observed Raman enhancements (104-105) for pyridine molecules adsorbed on a II-VI semiconductor CdSe/ZnBeSe sample of uncapped self-assembled quantum dots produced by molecular beam epitaxy. When a monolayer of pyridine is adsorbed on these structures, excitation at 488 nm produces intense Raman spectra a very large enhancement of the a1, b1 and b2 modes. This indicates the presence of charge-transfer as a contributor to the enhacement.
Livingstone, Richard [City College of New York, New York, NY (United States)
Conversion of the trace elements Zn, Cd, and Pb in the combustion of near-Moscow coals
A model for the conversion of trace elements in the combustion of near-Moscow coals based on a complex approach combining the capabilities of geochemistry, chemical thermodynamics, phase analysis, and chemical kinetics is proposed. The conversion of the trace elements Zn, Cd, and Pb as the constituents of near-Moscow coal in the flow of coal combustion products along the line of the P-59 boiler at the Ryazanskaya Thermal Power Plant was calculated. Experimental data were used in the development of the model and in calculations.
E.V. Samuilov; L.N. Lebedeva; L.S. Pokrovskaya; M.V. Faminskaya [OAO Power Engineering Institute, Moscow (Russia)
COMPACT CdZnTe-BASED GAMMA CAMERA FOR PROSTATE CANCER IMAGING
In this paper, we discuss the design of a compact gamma camera for high-resolution prostate cancer imaging using Cadmium Zinc Telluride (CdZnTe or CZT) radiation detectors. Prostate cancer is a common disease in men. Nowadays, a blood test measuring the level of prostate specific antigen (PSA) is widely used for screening for the disease in males over 50, followed by (ultrasound) imaging-guided biopsy. However, PSA tests have a high false-positive rate and ultrasound-guided biopsy has a high likelihood of missing small cancerous tissues. Commercial methods of nuclear medical imaging, e.g. PET and SPECT, can functionally image the organs, and potentially find cancer tissues at early stages, but their applications in diagnosing prostate cancer has been limited by the smallness of the prostate gland and the long working distance between the organ and the detectors comprising these imaging systems. CZT is a semiconductor material with wide band-gap and relatively high electron mobility, and thus can operate at room temperature without additional cooling. CZT detectors are photon-electron direct-conversion devices, thus offering high energy-resolution in detecting gamma rays, enabling energy-resolved imaging, and reducing the background of Compton-scattering events. In addition, CZT material has high stopping power for gamma rays; for medical imaging, a few-mm-thick CZT material provides adequate detection efficiency for many SPECT radiotracers. Because of these advantages, CZT detectors are becoming popular for several SPECT medical-imaging applications. Most recently, we designed a compact gamma camera using CZT detectors coupled to an application-specific-integrated-circuit (ASIC). This camera functions as a trans-rectal probe to image the prostate gland from a distance of only 1-5 cm, thus offering higher detection efficiency and higher spatial resolution. Hence, it potentially can detect prostate cancers at their early stages. The performance tests of this camera have been completed. The results show better than 6-mm resolution at a distance of 1 cm. Details of the test results are discussed in this paper.
CUI, Y.; LALL, T.; TSUI, B.; YU, J.; MAHLER, G.; BOLOTNIKOV, A.; VASKA, P.; DeGERONIMO, G.; O' CONNOR, P.; MEINKEN, G.; JOYAL, J.; BARRETT, J.; CAMARDA, G.; HOSSAIN, A.; KIM, K.H.; YANG, G.; POMPER, M.; CHO, S.; WEISMAN, K.; SEO, Y.; BABICH, J.; LaFRANCE, N.; AND JAMES, R.B.
U.S. Energy Information Administration (EIA) Indexed Site
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Biodistribution of radioactive Cd125mTe/ZnS nanoparticles targeted with antibody to murine lung endothelium.
Radioactive cadmium telluride/zinc sulfide (Cd{sup 125m}Te/ZnS) nanoparticles were targeted to mouse lung with antibody to mouse lung endothelium and quantified using radiological histology in order to test the in vivo targeting efficacy of a nanoparticle-antibody (NP-mAb) system. The nanoparticles were linked to either a monoclonal antibody to mouse lung thrombomodulin (mAb 201B) or a control antibody (mAb 33), and injected into groups of 6-week-old Balb/C female mice. Animals were sacrificed at 1, 4, 24, 72 and 144 h post-injection, and biodistribution in major organs was determined. Full body microSPECT/CT imaging was performed on a pair of mice (experimental and control) providing visual confirmation of the biodistribution. The Cd{sup 125m}Te/ZnS NPs conjugated to mAb 201B principally target the lungs while the nanoparticles coupled to mAb 33 accumulate in the liver and spleen. These data provide, for the first time, a quantitative measurement of the in vivo targeting efficacy of an inorganic nanoparticle-mAb system.
Woodward, Jonathan [ORNL; Kennel, Steve J [ORNL; Mirzadeh, Saed [ORNL; Dai, Sheng [ORNL; Rondinone, Adam Justin [ORNL
TiO2 Nanotubes with a ZnO Thin Energy Barrier for Improved Current Efficiency of CdSe Quantum-Dot-Sensitized Solar Cells
This paper reports the formation of a thin ZnO energy barrier between a CdSe quantum dot (Q dots) sensitizer and TiO{sub 2} nanotubes (TONTs) for improved current efficiency of Q dot-sensitized solar cells. The formation of a ZnO barrier between TONTs and the Q dot sensitizer increased the short-circuit current under illumination and also reduced the dark current in a dark environment. The power conversion efficiency of Q dot-sensitized TONT solar cells increased by 25.9% in the presence of the ZnO thin layer due to improved charge-collecting efficiency and reduced recombination.
Lee, W.; Kang, S. H.; Kim, J. Y.; Kolekar, G. B.; Sung, Y. E.; Han, S. H.
Properties of Cd and Zn Partial Electrolyte Treated CIGS Solar Cells: Preprint
We study the influence of Cd partial baths on the photovoltaic properties of CuInGaSe2 (CIGS) and CuIn-GaSSe2 (CIGSS) thin film absorbers. We find that efficient solar cells can be fabricated by this treatment, and we compare their properties with those containing CdS window layers grown by chemical bath deposition. The results suggest that Cd plays a dominant role in establishing efficient photovoltaic junctions in CuInSe2 alloys. Micron scale photoluminescence scans show non-uniformity along the length probed. Cd treatment quenches one of the luminescence transitions, which indicates a change in shallow acceptor level density. We present a model that helps to explain the evolution of photovoltaic action.
Ramanathan, K.; Hasoon, F. S.; Smith, S.; Mascarenhas, A.; Al-Thani, H.; Alleman, J.; Ullal, H. S.; Keane, J.; Johnson, P. K.; Sites, J. R.
Investigation of Charge Transport Properties of CdZnTe Detectors with Synchrotron X-ray Radiation
Various internal defects, such as Te inclusions, twin boundaries, dislocation, etc., are prevalent in as-grown CdZnTe (CZT) crystals, which affect the charge transport properties of CZT crystals and, therefore, worsen the performance of CZT detectors. In order to develop high quality CZT detectors, it is imperative to clarify the effects of internal defects on the charge transport properties of CZT. Simple flood illumination with nuclear radiation source cannot reveal the nature of highly localized defects in CZT. Therefore, at Brookhaven's National Synchrotron Light Source (NSLS), we have developed a unique testing system for micro-scale defect investigation of CZT, which employs an X-ray beam collimated with the spatial resolution as small as 3 x 3 {micro}m{sup 2}, a microscopic size comparable to the scale of common defects in CZT. This powerful tool enables us to investigate the effect of internal defects on charge transport properties of CZT in detail.
Yang,G.; Bolotnikov, A.E.; Camarda, G.S.; Cui, Y.; Hossain, A.; James, R.B.
An effect of the networks of the subgrain boundaries on spectral responses of thick CdZnTe detectors
CdZnTe (CZT) crystals used for nuclear-radiation detectors often contain high concentrations of subgrain boundaries and networks of poligonized dislocations that can significantly degrade the performance of semiconductor devices. These defects exist in all commercial CZT materials, regardless of their growth techniques and their vendor. We describe our new results from examining such detectors using IR transmission microscopy and white X-ray beam diffraction topography. We emphasize the roles on the devices performances of networks of subgrain boundaries with low dislocation densities, such as poligonized dislocations and mosaic structures. Specifically, we evaluated their effects on the gamma-ray responses of thick, >10 mm, CZT detectors. Our findings set the lower limit on the energy resolution of CZT detectors containing dense networks of subgrain boundaries, and walls of dislocations.
Bolotnikov, A.; Butcher, J.; Camarda, G.; Cui, Y.; Egarievwe, S.; Fochuk, P.; Gul,R.; Hamade, M.; Hossain, A.; Kim, K.; Kopach,O.; Petryk, M.; Raghothamachar, B.; Yang, G.; and James, R.B.
Simulation, Modeling, and Crystal Growth of Cd0.9Zn0.1Te for Nuclear Spectrometers
High-quality, large (10 cm long and 2.5 cm diameter), nuclear spectrometer grade Cd{sub 0.9}Zn{sub 0.1}Te (CZT) single crystals have been grown by a controlled vertical Bridgman technique using in-house zone refined precursor materials (Cd, Zn, and Te). A state-of-the-art computer model, multizone adaptive scheme for transport and phase-change processes (MASTRAP), is used to model heat and mass transfer in the Bridgman growth system and to predict the stress distribution in the as-grown CZT crystal and optimize the thermal profile. The model accounts for heat transfer in the multiphase system, convection in the melt, and interface dynamics. The grown semi-insulating (SI) CZT crystals have demonstrated promising results for high-resolution room-temperature radiation detectors due to their high dark resistivity ({rho} {approx} 2.8 x 10{sup 11} {Theta} cm), good charge-transport properties, electron and hole mobility-life-time product, {mu}{tau}{sub e} {approx} (2-5) x 10{sup -3} and {mu}{tau}{sub h} {approx} (3-5) x 10{sup -5} respectively, and low cost of production. Spectroscopic ellipsometry and optical transmission measurements were carried out on the grown CZT crystals using two-modulator generalized ellipsometry (2-MGE). The refractive index n and extinction coefficient k were determined by mathematically eliminating the {approx}3-nm surface roughness layer. Nuclear detection measurements on the single-element CZT detectors with {sup 241}Am and {sup 137}Cs clearly detected 59.6 and 662 keV energies with energy resolution (FWHM) of 2.4 keV (4.0%) and 9.2 keV (1.4%), respectively.
Mandal, Krishna [EIC Laboratories, Inc.; Kang, Sung Hoon [EIC Laboratories, Inc.; Choi, Michael [EIC Laboratories, Inc.; Bello, Job [EIC Laboratories, Inc.; Zheng, Lili [State University of New York, Stony Brook; Zhang, Hui [State University of New York, Stony Brook; Groza, Michael [Fisk University, Nashville, TN; Roy, Utpal N. [Fisk University, Nashville, TN; Burger, Arnold [Fisk University, Nashville, TN; Jellison Jr, Gerald Earle [ORNL; Holcomb, David Eugene [ORNL; Wright, Gomez W [ORNL; Williams, Joseph A [ORNL
Aggregation Kinetics of Metal Chalcogenide Nanocrystals: Generation of Transparent CdSe(ZnS) Core(Shell) Gels
Transparent CdSe (ZnS) core (shell) sol�gel materials have potential uses in optoelectronic applications such as light-emitting diodes (LEDs) due to their strong luminescence properties and the potential for charge transport through the prewired nanocrystal (NC) network of the gel. However, typical syntheses of metal chalcogenide gels yield materials with poor transparency. In this work, the mechanism and kinetics of aggregation of two sizes of CdSe (ZnS) core (shell) NCs, initiated by removal of surface thiolate ligands using tetranitromethane (TNM) as an oxidant, were studied by means of time-resolved dynamic light scattering (TRDLS); the characteristics of the resultant gels were probed by optical absorption, transmission electron microscopy (TEM), and small-angle X-ray scattering (SAXS). At low concentrations of NCs (ca. 4 � 10{sup �7} M), the smaller, green-emitting NCs aggregate faster than the larger, orange-emitting NCs, for a specific oxidant concentration. The kinetics of aggregation have a significant impact on the macroscopic properties (i.e., transparency) of the resultant gels, with the transparency of the gels decreasing with the increase of oxidant concentration due the formation of larger clusters at the gel point and a shift away from a reaction-limited cluster-aggregation (RLCA) mechanism. This is further confirmed by analyses of the gel structures by SAXS and TEM. Likewise, the larger orange-emitting particles also produce larger aggregates at the gel point, leading to lower transparency. The ability to control the transparency of chalcogenide gels will enable their properties to be tuned in order to address application-specific needs in optoelectronics.
Korala, Lasantha; Brock, Stephanie
Energy Transfer Dynamics and Dopant Luminescence in Mn-Doped CdS/ZnS Core/Shell Nanocrystals
Mn-doped II-VI semiconductor nanocrystals exhibit bright dopant photoluminescence that has potential usefulness for light emitting devices, temperature sensing, and biological imaging. The bright luminescence comes from the 4T1?6A1 transition of the Mn2+ d electrons after the exciton-dopant energy transfer, which reroutes the exciton relaxation through trapping processes. The driving force of the energy transfer is the strong exchange coupling between the exciton and Mn2+ due to the confinement of exciton in the nanocrystal. The exciton-Mn spatial overlap affecting the exchange coupling strength is an important parameter that varies the energy transfer rate and the quantum yield of Mn luminescence. In this dissertation, this correlation is studied in radial doping location-controlled Mn-doped CdS/ZnS nanocrystals. Energy transfer rate was found decreasing when increasing the doping radius in the nanocrystals at the same core size and shell thickness and when increasing the size of the nanocrystals at a fixed doping radius. In addition to the exciton-Mn energy transfer discussed above, two consecutive exciton-Mn energy transfers can also occur if multiple excitons are generated before the relaxation of Mn (lifetime ~10^-4 - 10^-2 s). The consecutive exciton-Mn energy transfer can further excite the Mn2+ d electrons high in conduction band and results in the quenching of Mn luminescence. The highly excited electrons show higher photocatalytic efficiency than the electrons in undoped nanocrystals. Finally, the effect of local lattice strain on the local vibrational frequency and local thermal expansion was observed via the temperature-dependent Mn luminescence spectral linewidth and peak position in Mn-doped CdS/ZnS nanocrystals. The local lattice strain on the Mn2+ ions is varied using the large core/shell lattice mismatch (~7%) that creates a gradient of lattice strain at various radial locations. When doping the Mn2+ closer to the core/shell interface, the stronger lattice strain softens the vibrational frequency coupled to the 4T1?6A1 transition of Mn2+ (Mn luminescence) by ~50%. In addition, the lattice strain also increases the anharmonicity, resulting in larger local thermal expansion observed from the nearly an order larger thermal shift of the Mn luminescence compared to the Mn-doped ZnS nanocrystals without the core/shell lattice mismatch.
Chen, Hsiang-Yun
BNL | Jörg Schwender
Jörg Schwender Jörg Schwender Background Plant biomass is of increasing importance as a renewable resource for the production of fuels and of chemical feedstocks that replace petroleum based materials. As a basis for rational engineering of seeds and other plant storage organs, our goal is to increase the basic understanding of the functioning of storage metabolism in plants. Of central interest here is the process of allocation of maternal carbon and nitrogen resources to different storage products (oil, protein and starch) in a sink organ like a developing seed. Schematic of carbon flow during storage synthesis in developing seeds of Brassica napus based on metabolic flux analysis (See publications below). PPP = pentose phosphate pathway; TAG = triacylglycerol. Research Interests
a a o O c- (D 3 m cn o 5- sl) < cn . ft, =. 0. CD --o O O (.0 RESPONSIVE TO THE NEEDS OF ENVIRONMENTAL MANAGEMENT 0 0 0 -1 0 CD 13 < 0 tl) 5' CD cn 51" INTERNATIONAL TECHNOLOGY CORPORATION Tritium Migration and Hydrogeological Studies in the Vicinity of Plot M Palos Forest Preserve * * INTERNATIONAL TECHNOLOGY CORPORATION Table of Contents List of Tables iii List of Figures iv 1.0 Introduction 1-1 1.1 History of the Site 1-1 1.2 Description of Radioactive Wastes 1-4 1.3 Radiological Characteristics of Tritium 1-5 1.4 Objectives and Scope of This Study 1-7 2.0 Description of the Area 2-1 2.1 Location 2-1 2.2 Physiography 2-1 2.3 Surface Drainage 2-2 2.4 Vegetation 2-3 3.0 Previous Investigations and Monitoring Programs
Development of ZnTe:Cu Contacts for CdTe Solar Cells: Cooperative Research and Development Final Report, CRADA Number CRD-08-320
The main focus of the work at NREL was on the development of Cu-doped ZnTe contacts to CdTe solar cells in the substrate configuration. The work performed under the CRADA utilized the substrate device structure used at NREL previously. All fabrication was performed at NREL. We worked on the development of Cu-doped ZnTe as well as variety of other contacts such as Sb-doped ZnTe, CuxTe, and MoSe2. We were able to optimize the contacts to improve device parameters. The improvement was obtained primarily through increasing the open-circuit voltage, to values as high as 760 mV, leading to device efficiencies of 7%.
Dhere, R.
CdSe/ZnS quantum dots based electrochemical immunoassay for the detection of phosphorylated bovine serum albumin
A CdSe/ZnS quantum dot (QD) based electrochemical immunoassay of phosphorylated bovine serum albumin as a protein biomarker is presented. The QDs were used as labels and were conjugated with the secondary anti-phosphoserine antibody in a heterogeneous sandwich immunoassay. First, the primary BSA antibody was immobilized on polystyrene microwells, followed by the addition of BSA-OP. After that, the QD-labeled anti-phosphoserine antibody was added into microwells for immunorecognition. Finally, the bound QD was dissolved in an acid-dissolution step and was detected by electrochemical stripping analysis. The measured current responses were proportional to the concentration of BSA-OP. Under optimal conditions, the voltammetric response was linear over the range of 0.5 - 500 ng mL-1 of BSA-OP, with a detection limit of 0.5 ng mL-1 at a deposition potential of -1.2 V for 120 s. It also shows good reproducibility with a relative standard deviation of 8.6% of six times determination of 25 ng mL-1 of BSA-OP. This QD-based electrochemical immunoassay offers great promise for simple and cost-effective analysis of protein biomarkers.
Pinwattana, Kulwadee; Wang, Jun; Lin, Chiann Tso; Wu, Hong; Du, Dan; Lin, Yuehe; Chailapakul, Orawon
Radiation dose reduction using a CdZnTe-based computed tomography system: Comparison to flat-panel detectors
Purpose: Although x-ray projection mammography has been very effective in early detection of breast cancer, its utility is reduced in the detection of small lesions that are occult or in dense breasts. One drawback is that the inherent superposition of parenchymal structures makes visualization of small lesions difficult. Breast computed tomography using flat-panel detectors has been developed to address this limitation by producing three-dimensional data while at the same time providing more comfort to the patients by eliminating breast compression. Flat panels are charge integrating detectors and therefore lack energy resolution capability. Recent advances in solid state semiconductor x-ray detector materials and associated electronics allow the investigation of x-ray imaging systems that use a photon counting and energy discriminating detector, which is the subject of this article. Methods: A small field-of-view computed tomography (CT) system that uses CdZnTe (CZT) photon counting detector was compared to one that uses a flat-panel detector for different imaging tasks in breast imaging. The benefits afforded by the CZT detector in the energy weighting modes were investigated. Two types of energy weighting methods were studied: Projection based and image based. Simulation and phantom studies were performed with a 2.5 cm polymethyl methacrylate (PMMA) cylinder filled with iodine and calcium contrast objects. Simulation was also performed on a 10 cm breast specimen. Results: The contrast-to-noise ratio improvements as compared to flat-panel detectors were 1.30 and 1.28 (projection based) and 1.35 and 1.25 (image based) for iodine over PMMA and hydroxylapatite over PMMA, respectively. Corresponding simulation values were 1.81 and 1.48 (projection based) and 1.85 and 1.48 (image based). Dose reductions using the CZT detector were 52.05% and 49.45% for iodine and hydroxyapatite imaging, respectively. Image-based weighting was also found to have the least beam hardening effect. Conclusions: The results showed that a CT system using an energy resolving detector reduces the dose to the patient while maintaining image quality for various breast imaging tasks.
Le, Huy Q.; Ducote, Justin L.; Molloi, Sabee [Department of Radiological Sciences, University of California, Irvine, California 92697 (United States)
Low-temperature photoluminescence of detector grade Cd{sub 1{minus}{ital x}}Zn{sub {ital x}}Te crystal treated by different chemical etchants
Low-temperature photoluminescence (PL) spectra of detector grade Cd{sub 1{minus}{ital x}}Zn{sub {ital x}}Te ({ital x}=0.1) have been measured to obtain information about shallow level defect concentration introduced during mechanical polishing and chemical etching processes. We present here a comparative PL study of Cd{sub 0.9}Zn{sub 0.1}Te crystals treated by different chemical solutions used for nuclear detector surface treatment. The results show that the 5{percent} Br{endash}MeOH+2{percent}Br{endash}20{percent} lactic acid in ethylene glycol treatment combines the advantages of bromine and lactic acid for chemical etching and results in the best surface condition, as evidenced by the largest {ital I}({ital D}{sup 0},{ital X})/{ital I}{sub def} intensity ratio and the narrowest full width at half-maximum of the main peak ({ital D}{sup 0},{ital X}). Changes in the surface morphology were also analyzed by atomic force microscopy and correlated with the PL results. Current{endash}voltage ({ital I}{endash}{ital V}) curves and the room-temperature {sup 55}Fe spectral response of the sample etched by the best treatment are also presented and discussed. {copyright} {ital 1996 American Institute of Physics.}
Chen, H.; Tong, J.; Hu, Z.; Shi, D.T.; Wu, G.H.; Chen, K.; George, M.A.; Collins, W.E.; Burger, A. [Center for Photonic Materials and Devices, Department of Physics, Fisk University, Nashville, Tennessee 37208 (United States); James, R.B. [Advanced Electronics Manufacturing Technologies Department, Sandia National Laboratories, Livermore, California 94550 (United States); Stahle, C.M. [NASA/Goddard Space Flight Center/OSC, Greenbelt, Maryland 20771 (United States); Bartlett, L.M. [NASA/Goddard Space Flight Center/NRC, Greenbelt, Maryland 20771 (United States)
Cu/sub x/S-(Cd,Zn)S photovoltaic solar energy converters. Quarterly report No. 2, July--September 1977
Reproducible growth of uncracked, >10 ..mu..m thick films of (Cd,Zn)S has been accomplished on the As(antis 111) face of GaAs substrates and on substrates tilted approximately 14/sup 0/ off of (antis 111). Modifications to the hot wall deposition apparatus have been made to eliminate the trace impurities which had been sometimes found at the perimeter of the films. Techniques for transmission electron microscope specimen preparation have been developed. The initial TEM results have yielded evidence supporting the earlier proposed mechanism of Ga-face film cracking by an interfacial layer of GaS. The spectral response portion of the new device measurement apparatus is operational. The elastic tunneling calculations have been found to agree with experimental results reported by other workers for I-V characteristics of illuminated cells.
Peterson, T. M.; Chin, B. L.; Seshan, K.; Washburn, J.
Drift time variations in CdZnTe detectors measured with alpha-particles: Their correlation with the detector�s responses
Homogeneity of properties related to material crystallinity is a critical parameter for achieving high-performance CdZnTe (CZT) radiation detectors. Unfortunately, this requirement is not always satisfied in today's commercial CZT material due to high concentrations of extended defects, in particular subgrain boundaries, which are believed to be part of the causes hampering the energy resolution and efficiency of CZT detectors. In the past, the effects of subgrain boundaries have been studied in Si, Ge and other semiconductors. It was demonstrated that subgrain boundaries tend to accumulate secondary phases and impurities causing inhomogeneous distributions of trapping centers. It was also demonstrated that subgrain boundaries result in local perturbations of the electric field, which affect the carrier transport and other properties of semiconductor devices. The subgrain boundaries in CZT material likely behave in a similar way, which makes them responsible for variations in the electron drift time and carrier trapping in CZT detectors. In this work, we employed the transient current technique to measure variations in the electron drift time and related the variations to the device performances and subgrain boundaries, whose presence in the crystals were confirmed with white beam X-ray diffraction topography and infrared transmission microscopy.
Bolotnikov A. E.; Butcher, J.; Hamade, M.; Petryk, M.; Bolotnikov, A.; Camarda, G.; Cui, Y.; Hossain, A.; Kim, K.; Yang, G.; and James, R.
Bright three-band white light generated from CdSe/ZnSe quantum dot-assisted Sr{sub 3}SiO{sub 5}:Ce{sup 3+},Li{sup +}-based white light-emitting diode with high color rendering index
In this study, bright three-band white light was generated from the CdSe/ZnSe quantum dot (QD)-assisted Sr{sub 3}SiO{sub 5}:Ce{sup 3+},Li{sup +}-based white light-emitting diode (WLED). The CdSe/ZnSe core/shell structure was confirmed by energy dispersive x-ray spectroscopy and x-ray photoelectron spectroscopy. The CdSe/ZnSe QDs showed high quantum efficiency (79%) and contributed to the high luminous efficiency ({eta}{sub L}) of the fabricated WLED. The WLED showed bright natural white with excellent color rendering property ({eta}{sub L}=26.8 lm/W, color temperature=6140 K, and color rendering index=85) and high stability against the increase in forward bias currents from 20 to 70 mA.
Jang, Ho Seong; Kwon, Byoung-Hwa; Jeon, Duk Young [Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1, Guseong-dong, Yuseong-gu, Daejeon 305-701 (Korea, Republic of); Yang, Heesun [Department of Materials Science and Engineering, Hongik University, 72-1, Sangsu-dong, Mapo-gu, Seoul 121-791 (Korea, Republic of)
Direct measurement of product of the electron mobility and mean free drift time of CdZnTe semiconductors using position sensitive single
Direct measurement of product of the electron mobility and mean free drift time of Cd Institute of Physics. Related Articles A new detector for mass spectrometry: Direct detection of low energy://jap.aip.org/about/rights_and_permissions #12;Direct measurement of product of the electron mobility and mean free drift time of Cd
He, Zhong
Five new Zn(II) and Cd(II) coordination polymers constructed by 3,5-bis-oxyacetate-benzoic acid: Syntheses, crystal structures, network topologies and luminescent properties
Five Zn(II) and Cd(II) coordination polymers, [Zn{sub 2}(BOABA)(bpp)(OH)]{center_dot}0.5H{sub 2}O (1), [Cd{sub 3}(BOABA){sub 2}(bpp){sub 2}(H{sub 2}O){sub 6}]{center_dot}2H{sub 2}O (2), [Cd{sub 3}(BOABA){sub 2}(2,2 Prime -bipy){sub 3}(H{sub 2}O){sub 4}]{center_dot}5.5H{sub 2}O (3), [CdNa(BOABA)(H{sub 2}O)]{sub 2}{center_dot}H{sub 2}O (4) and [Cd{sub 2}(BOABA)(bimb)Cl(H{sub 2}O){sub 2}]{center_dot}H{sub 2}O (5) (H{sub 3}BOABA=3,5-bis-oxyacetate-benzoic acid, bpp=1,3-bi(4-pyridyl)propane, 2,2 Prime -bipy=2,2 Prime -bipyridine, bimb=1,4-bis(imidazol-1 Prime -yl)butane), have been solvothermally synthesized and characterized by single-crystal X-ray diffraction, elemental analyses, IR spectra and TG analyses. 1 is an uninodal 4-connected 2D square grid network based on binuclear zinc clusters. 2 is 2D wavelike layer structure and further linked by hydrogen bonds into the final 3D (5,6,6)-connected topology network. 3 is 3-connected 2D topology network and the 2,2 Prime -bipy ligands decorate in two different types. 4 is a (4,8)-connected 2D topology network with heterocaryotic {l_brace}Cd{sub 2}Na{sub 2}{r_brace} clusters and BOABA{sup 3-} ligands. 5 can be rationalized as a (3,10)-connected 3D topology network with tetranuclear {l_brace}Cd{sub 4}Cl{sub 2}{r_brace} clusters and BOABA{sup 3-} ligands. Meanwhile, photoluminescence studies revealed that these five coordination polymers display strong fluorescent emission bands in the solid state at room temperature. - Graphical abstract: Five new d{sup 10} metal(II) coordination polymers based on H{sub 3}BOABA ligand were obtained and characterized. They display different topological structures and luminescent properties. Highlights: Black-Right-Pointing-Pointer Five d{sup 10} metal(II) polymers based on 3,5-bis-oxyacetate-benzoic acid were obtained. Black-Right-Pointing-Pointer The polymers were structurally characterized by single-crystal X-ray diffraction. Black-Right-Pointing-Pointer Polymers 1-5 display different topological structures. Black-Right-Pointing-Pointer They show strong fluorescent emission bands in the solid state.
Jiang Xianrong; Yuan Hongyan [Zhejiang Key Laboratory for Reactive Chemistry on Solid Surfaces, Institute of Physical Chemistry, Zhejiang Normal University, Jinhua, Zhejiang 321004 (China); Feng Yunlong, E-mail: firstname.lastname@example.com [Zhejiang Key Laboratory for Reactive Chemistry on Solid Surfaces, Institute of Physical Chemistry, Zhejiang Normal University, Jinhua, Zhejiang 321004 (China)
RG&E - Residential Efficiency Program | Department of Energy
Energy.gov (U.S. Department of Energy (DOE)) Indexed Site
- Residential Efficiency Program - Residential Efficiency Program RG&E - Residential Efficiency Program < Back Eligibility Multi-Family Residential Residential Savings Category Appliances & Electronics Commercial Lighting Lighting Program Info Funding Source PSC-mandated System Benefits Charge (SBC) State New York Program Type Utility Rebate Program Rebate Amount Refrigerator Recycling: $50 rebate and free removal Multifamily Dwelling Units: 6 free CFLS and smart power strips Multifamily Common Area Ligting: 50% off custom lighting upgrades RG&E is offering residential electric customers rebates for recycling refrigerators, and its multifamily customers free CFLs, smart power strips and 50% off common area lighting equipment. All equipment requirements must be met in order to receive rebates. See the program website for details.
Novel CdTe Cell Fabrication Process with Potential for Low Cost and High Throughput
There are several production disadvantages inherent in the conventional SnO(2)/CdS/CdTe manufacturing processes. In this paper, we report a novel manufacturing process for fabrication of polycrystalline Cd(2)SnO(4)/Zn(2)/SnO(4)/CdS/CdTe thin-film solar cells that yielded a CdS/CdTe device with an NREL-confirmed efficiency of 14.0%.
Wu, X.; Sheldon, P.
Electroluminescence of ZnO-based semiconductor heterostructures
Using pulsed laser deposition, we have grown n-ZnO/p-GaN, n-ZnO/i-ZnO/p-GaN and n-ZnO/n-Mg{sub 0.2}Zn{sub 0.8}O/i-Cd{sub 0.2}Zn{sub 0.8}O/p-GaN light-emitting diode (LED) heterostructures with peak emission wavelengths of 495, 382 and 465 nm and threshold current densities (used in electroluminescence measurements) of 1.35, 2, and 0.48 A cm{sup -2}, respectively. Because of the spatial carrier confinement, the n-ZnO/n-Mg{sub 0.2}Zn{sub 0.8}O/i-Cd{sub 0.2}Zn{sub 0.8}O/p-GaN double heterostructure LED offers a higher electroluminescence intensity and lower electroluminescence threshold in comparison with the n-ZnO/p-GaN and n-ZnO/i-ZnO/p-GaN LEDs. (lasers)
Novodvorskii, O A; Lotin, A A; Panchenko, Vladislav Ya; Parshina, L S; Khaidukov, E V; Zuev, D A; Khramova, O D [Institute on Laser and Information Technologies, Russian Academy of Sciences, Shatura, Moscow Region (Russian Federation)
Seismic CD
SEISMIC CD Table of Contents INTRODUCTION Background Resource Findings and Recovery Timeline Oil Program ADIS Overview Gas Program ADIS Overview SEISMIC TECHNOLOGY DEVELOPMENT...
N=1 RG Flows, Product Groups, and a-Maximization
We explore new IR phenomena and dualities, arising for product groups, in the context of N=1 supersymmetric gauge theories. The RG running of the multiple couplings can radically affect each other. For example, an otherwise IR interacting coupling can be driven to be instead IR free by an arbitrarily small, but non-zero, initial value of another coupling. Or an otherwise IR free coupling can be driven to be instead IR interacting by an arbitrarily small non-zero initial value of another coupling. We explore these and other phenomena in N=1 examples, where exact results can be obtained using a-maximization. We also explore the various possible dual gauge theories, e.g. by dualizing one gauge group with the other treated as a weakly gauged flavor symmetry, along with previously proposed duals for the theories deformed by A_k-type Landau-Ginzburg superpotentials. We note that this latter duality, and all similar duality examples, always have non-empty superconformal windows, within which both the electric and dual A_k superpotentials are relevant.
Edwin Barnes; Ken Intriligator; Brian Wecht; Jason Wright
RG&E (Electric) - Commercial and Industrial Efficiency Program | Department
RG&E (Electric) - Commercial and Industrial Efficiency Program RG&E (Electric) - Commercial and Industrial Efficiency Program RG&E (Electric) - Commercial and Industrial Efficiency Program < Back Eligibility Agricultural Commercial Fed. Government Industrial Institutional Local Government Nonprofit State Government Tribal Government Savings Category Heating & Cooling Commercial Heating & Cooling Cooling Other Heat Pumps Appliances & Electronics Commercial Lighting Lighting Maximum Rebate No maximum per customer rebate; however, NYSEG/RG&E reserve the right to cap the rebate to any one customer Program Info State New York Program Type Utility Rebate Program Rebate Amount HVAC: Prescriptive incentives vary A/C or Heat Pump A/C or Heat Pump > 63 tons: $25/ton + $5/ton for each 0.1 EER above 9.7 Water Cooled Chillers: $6/ton or $15/ton + $2-$8/ton for each 0.01 kW/ton
RG&E (Gas) - Residential Efficiency Program (New York) | Department of
RG&E (Gas) - Residential Efficiency Program (New York) RG&E (Gas) - Residential Efficiency Program (New York) RG&E (Gas) - Residential Efficiency Program (New York) < Back Eligibility Residential Savings Category Heating & Cooling Commercial Heating & Cooling Heating Appliances & Electronics Water Heating Maximum Rebate Cannot exceed total installed price. Program Info Funding Source PSC-mandated System Benefits Charge (SBC) State New York Program Type Utility Rebate Program Rebate Amount Furnace: $140-$600 (w/ECM) Water Boiler: $350-$1,000 Steam Boiler: $350 Boiler Reset Control: $100 Indirect Water Heater: $210 Programmable Thermostat: $18 RG&E is offering residential natural gas customers rebates for installing energy efficient equipment. Customers can complete one rebate application for multiple pieces of equipment as long as they are not the same type of
SITE ;&;*E: ELK R~dEx RG&cme ALTERNATE NAIIE:
Office of Legacy Management (LM)
. . . 1PiEil0RAlriDUiY SITE ;&;*E: ELK RdEx RG&cme ALTERNATE NAIIE: -------- ---------- ,;yTy. tyLtt RIdEi% -------...
CdS/CdTe Thin-Film Solar Cell with a Zinc Stannate Buffer Layer
This paper describes an improved CdS/CdTe polycrystalline thin-film solar-cell device structure that integrates a zinc stannate (Zn2SnO4 or ZTO) buffer layer between the transparent conductive oxide (TCO) layer and the CdS window layer. Zinc stannate films have a high bandgap, high transmittance, low absorptance, and low surface roughness. In addition, these films are chemically stable and exhibit higher resistivities that are roughly matched to that of the CdS window layer in the device structure. Preliminary device results have demonstrated that by integrating a ZTO buffer layer in both SnO2-based and Cd2SnO4 (CTO)-based CdS/CdTe devices, performance and reproducibility can be significantly enhanced
Wu, X.; Sheldon, P.; Mahathongdy, Y.; Ribelin, R.; Mason, A.; Moutinho, H. R.; Coutts, T. J.
Novel ways of depositing ZnTe films by a solution growth technique
An electrochemical process has been successfully developed for the reproducible deposition of ZnTe and copper-doped ZnTe films suitable as transparent ohmic contacts for CdS/CdTe solar cells. The development of this method and optimization of key processing steps in the fabrication of CdS/CdTe/ZnTe:Cu devices has allowed IEC to achieve cell performance results of FF>70% and {eta} {approximately}10%. Preliminary efforts have indicated that the deposition methods investigated are potentially feasible for the formation of other II-VI compounds for use in polycrystalline thin film solar devices and should be the focus of future work.
Birkmire, R.W.; McCandless, B.E.; Yokimcus, T.A.; Mondal, A. (Delaware Univ., Newark, DE (United States). Inst. of Energy Conversion)
RG&E (Gas) - Commercial and Industrial Efficiency Program | Department of
Commercial and Industrial Efficiency Program Commercial and Industrial Efficiency Program RG&E (Gas) - Commercial and Industrial Efficiency Program < Back Eligibility Agricultural Commercial Industrial Institutional Local Government Multi-Family Residential Nonprofit State Government Tribal Government Savings Category Heating & Cooling Commercial Heating & Cooling Heating Other Maximum Rebate No maximum per customer rebate; however, NYSEG/RG&E reserve the right to cap the rebate to any one customer. Program Info State New York Program Type Utility Rebate Program Rebate Amount HVAC: Prescriptive incentives vary Condensing Boilers: $1000-$6000 Hydronic Boilers: $500-$4000 Steam Boilers: $200 Furnaces: $100 Programmable Thermostats: $25 Boiler Reset Controls: $150 Provider NYSEG/RGE NYSEG and RG&E offer rebates to non-residential customers installing energy
RG&E (Electric) - Small Business Lighting Retrofit Program | Department of
Small Business Lighting Retrofit Program Small Business Lighting Retrofit Program RG&E (Electric) - Small Business Lighting Retrofit Program < Back Eligibility Commercial Savings Category Appliances & Electronics Commercial Lighting Lighting Program Info Funding Source System Benefits Charge State New York Program Type Utility Rebate Program Rebate Amount Energy Assessment: Free Lighting Retrofit: 70% of cost Provider RG&E and NYSEG RG&E offers a lighting incentive program designed to serve small business customers with a demand of 100 kilowatts (kW) or less. These small business customers may schedule a free energy assessment and then receive a 70% discount on the installed cost of recommended lighting measures. Eligible lighting measures include the retrofitting of fluorescent fixtures,
Microsoft Word - RBL_Jan_2009_RG24-13-398.doc
24-13-398 24-13-398 Well: Gas production well, Federal RG 24-13-398, API # 05-103-10702. Operator: Williams Production RMT, Incorporated Sampler: U.S. Department of Energy, Office of Legacy Management, Grand Junction, CO. Date of Sampling Event: 7 January 2009 Samples of natural gas and produced water were collected from production well Federal RG 24-13-398. Location data for the surface collection point and the sample location are given in Table 1. A description of each sample collected is listed in Table 2. Table 1. Well Federal RG 24-13-398, API # 05-103-10702 Sample Location Distance (feet) from Surface Sample Point Location Location Sea Level elevation (feet) N-S Section line E-W Section line Latitude (NAD 27) Longitude (NAD 27) Distance
Applied Reactor Physics TA RG E T AU D I E N C E
courses. Most production codes in reactor physics are accompanied with rather complete theory guides devoted to the study of interactions between neutrons and matter in a nuclear reactor. Such an interactionApplied Reactor Physics TA RG E T AU D I E N C E Applied Reactor Physics is designed for an audi
Meunier, Michel
Effective photoelectric converters of ultraviolet radiation with graded-gap ZnS-based layers
The use of ultrathin ({approx}10 nm) stable p-Cu{sub 1.8}S films as a transparent component of the p-Cu{sub 1.8}S-n-ZnS heterojunction as well as of the graded-gap layers made it possible to obtain effective photoconverters of ultraviolet radiation. The results of examination of the properties of photoactive Cu{sub 1.8}S-ZnS junctions grown on the CdS or CdSe substrates with intermediate graded-gap layers CdS-Zn{sub x}Cd{sub 1-x}S or CdSe-(ZnS){sub x}(CdSe){sub 1-} {sub x}, respectively, are presented. With the correct selection of parameters of the substrates, the graded-gap layers allows one to attain the optimal characteristics of the p-n junction, to realize high electric fields at the Cu{sub 1.8}S-ZnS contact, and to solve the problem of fabrication of the back ohmic contact to ZnS without additional doping of all components of the heterostructure with a foreign impurity. Varying the thickness of a thin ZnS layer, it is possible to control the extension of the space charge in the graded-gap layer and thereby to control the long-wavelength edge of photoconverter sensitivity.
Bobrenko, Yu. N.; Pavelets, S. Yu., E-mail: email@example.com; Pavelets, A. M. [National Academy of Sciences of Ukraine, Lashkarev Institute of Semiconductor Physics (Ukraine)
High Efficiency Single Crystal CdTe Solar Cells: November 19, 2009 - January 31, 2011
The goal of the program was to develop single crystal CdTe-based top cells grown on Si solar cells as a platform for the subsequent manufacture of high efficiency tandem cells for CPV applications. The keys to both the single junction and the tandem junction cell architectures are the ability to grow high quality single-crystal CdTe and CdZnTe layers on p-type Si substrates, to dope the CdTe and CdZnTe controllably, both n and p-type, and to make low resistance ohmic front and back contacts. EPIR demonstrated the consistent MBE growth of CdTe/Si and CdZnTe/Si having high crystalline quality despite very large lattice mismatches; epitaxial CdTe/Si and CdZnTe/Si consistently showed state-of-the-art electron mobilities and good hole mobilities; bulk minority carrier recombination lifetimes of unintentionally p-doped CdTe and CdZnTe grown by MBE on Si were demonstrated to be consistently of order 100 ns or longer; desired n- and p-doping levels were achieved; solar cell series specific resistances <10 ?-cm2 were achieved; A single-junction solar cell having a state-of-the-art value of Voc and a unverified 16.4% efficiency was fabricated from CdZnTe having a 1.80 eV bandgap, ideal for the top junction in a tandem cell with a Si bottom junction.
Carmody, M.; Gilmore, A.
Photodeposition of Pt on Colloidal CdS and CdSe/CdS Semiconductor Nanostructures
on Colloidal CdS and CdSe/CdS Semiconductor Nanostructuresof Pt on colloidal CdS and CdSe/CdS core/shell nanocrystals.photoexcitation of CdS and CdSe/CdS in the presence of an
Dukovic, Gordana
ZnO-ZnTe Nanocone Heterojunctions
Semiconductor nanostructure heterojunctions are expected to be efficient structures for next-generation photovoltaic solar cells, radiation detectors, and light-emitting diodes. In this letter we report heterojunctions made of vertically aligned ZnO/ZnTe nanocones synthesized using a combination of thermal vapor deposition and pulsed-laser deposition (PLD). The ZnO nanocones and nanorods were synthesized as cores by utilizing the growth rate difference between central and boundary sites of precursor domains during thermal vapor deposition. The p-n heterojunctions were subsequently formed by growing ZnTe as shells on the nanocone surface using PLD. The ZnTe shells were polycrystalline structures, while ZnO cores were wurzite structures. The p-n junction of the nanocone core-shell structure exhibited I-V characteristics consistent with a p-n diode, but the nanorod junction did not. These structural and electric characteristics indicate that the ZnO nanocones are more feasible than ZnO nanorods as heterojunctions because the sloping facets of the nanocones facilitate deposition of ZnTe by PLD without the deleterious effects of shadowing. Furthermore, based on theoretical modeling of nanostructure heterojunctions, the nanocone-based junction exhibits an electrostatic potential profile that is much more effective for carrier transport than the electrostatic potential for the nanorod-based junction.
Lee, Sang Hyun [ORNL; Smith, Barton [ORNL; Zhang, Xiaoguang [ORNL; Seo, Sung Seok A [ORNL; Bell, Zane W [ORNL; Xu, Jun [ORNL
Novel ways of depositing ZnTe films by a solution growth technique. Final subcontract report, 1 January 1990--1 January 1992
Birkmire, R.W.; McCandless, B.E.; Yokimcus, T.A.; Mondal, A. [Delaware Univ., Newark, DE (United States). Inst. of Energy Conversion
Evidence for the Strongest Version of the 4d a-Theorem, via a-Maximization Along RG Flows
In earlier work, we (KI and BW) gave a two line "almost proof" (for supersymmetric RG flows) of the weakest form of the conjectured 4d a-theorem, that a_{IR}RG flow, with Lagrange multipliers that are conjectured to be identified with the running coupling constants. a-maximization then yields a monotonically decreasing "a-function" along the RG flow to the IR. As we discuss, this proposal in fact suggests the strongest version of the a-theorem: that 4d RG flows are gradient flows of an a-function, with positive definite metric. In the perturbative limit, the RG flow metric thus obtained is shown to agree precisely with that found by very different computations by Osborn and collaborators. As examples, we discuss a new class of 4d SCFTs, along with their dual descriptions and IR phases, obtained from SQCD by coupling some of the flavors to added singlets.
COL Application Content Guide for HTGRs: Revision to RG 1.206, Part 1 - Status Report
A combined license (COL) application is required by the Nuclear Regulatory Commission (NRC) for all proposed nuclear plants. The information requirements for a COL application are set forth in 10 CFR 52.79, �Contents of Applications; Technical Information in Final Safety Analysis Report.� An applicant for a modular high temperature gas-cooled reactor (HTGR) must develop and submit for NRC review and approval a COL application which conforms to these requirements. The technical information necessary to allow NRC staff to evaluate a COL application and resolve all safety issues related to a proposed nuclear plant is detailed and comprehensive. To this, Regulatory Guide (RG) 1.206, �Combined License Applications for Nuclear Power Plants� (LWR Edition), was developed to assist light water reactor (LWR) applicants in incorporating and effectively formatting required information for COL application review (Ref. 1). However, the guidance prescribed in RG 1.206 presumes a LWR design proposal consistent with the systems and functions associated with large LWR power plants currently operating under NRC license.
Wayne Moe
Single-peak excitonic emission of CdSe ultra-thin quantum wells finished with fractional monolayers
Ultra-thin quantum wells (UTQWs) of CdSe grown by atomic layer epitaxy (ALE) present very interesting features, such as intense excitonic luminescence and relatively narrow width. Grown under adequate conditions only a single excitonic peak is exhibited ... Keywords: Atomic layer epitaxy (ALE), CdSe, Excitons, II-VI semiconductors, Interface, Photoluminiscence, Ultra-thin quantum wells, ZnSe
Adri�n Alfaro-Mart�nez; Isaac Hern�ndez-Calder�n
Spectroscopy of low energy solar neutrinos using CdTe detectors
The usage of a large amount of CdTe(CdZnTe) semiconductor detectors for solar neutrino spectroscopy in the low energy region is investigated. Several different coincidence signals can be formed on five different isotopes to measure the Be-7 neutrino line at 862 keV in real-time. The most promising one is the usage of Cd-116 resulting in 89 SNU. The presence of Te-125 permits even the real-time detection of pp-neutrinos. A possible antineutrino flux above 713 keV might be detected by capture on Cd-106 .
K. Zuber
Zuber, K
Bioavailability of Cd, Zn and Se in two marine fish.
??xxi, 210 leaves : ill. ; 30 cm HKUST Call Number: Thesis BIOL 2007 Zhang It is valuable to study the bioavailability of trace metal� (more)
Zhang, Li
CdZnTe Detectors Development in the NNS Department
. Hossain, K. Kim, G. Yang, and R. James Nonproliferation and National Security Department Brookhaven
Homes, Christopher C.
In-Zn (Indium - Zinc)
In-Zn crystallographic data...In-Zn crystallographic data Phase Composition, wt% Zn Pearson symbol Space group (In) 0 to 1 tI 2 I 4/ mmm (Zn) 99.8 to 100 hP 2 P 6 3 / mmc...
Ba-Cd (Barium - Cadmium)
Ba-Cd crystallographic data...Ba-Cd crystallographic data Phase Composition, wt% Cd Pearson symbol Space group (Ba) 0 cI 2 Im m Ba 2 Cd 29.0 tI 6 I 4/ mmm BaCd 45 cP 2 Pm m BaCd 2 62.1 oI 12 Imma Ba 7 Cd 31 78.4 hP 41 P 6/ mmm BaCd 11 90.0 tI 48 I 4 1 / amd (Cd) 100 hP 2 P 6 3 / mmc...
Cd-P (Cadmium - Phosphorus)
Cd-P crystallographic data...Cd-P crystallographic data Phase Composition, wt% P Pearson symbol Space group (Cd) 0 hP 2 P 6 3 / mmc Cd 3 P 2 16 tI 40 P 4 2 / nmc Cd 6 P 7 24.3 c *52 �?� Cd 7 P 10 24.3 oF 136 Fdd 2 βCdP 2 55.6 tP 24 P 4 3 2 1 2 αCdP 2 35.6 oP 12 Pna 2 1 CdP 4 52.4 mP 10 P 2 1 / c...
Complete CFD analysis of a Velocity XL-5 RG with flight-test verification
The Texas A&M Flight Research Laboratory (FRL) recently received delivery of its newest aircraft, the Velocity XL-5 RG. The Velocity can fly faster than the other aircraft owned by the FRL and does not have a propeller in the front of the aircraft to disrupt the air flow. These are definite advantages that make the Velocity an attractive addition to the FRL inventory to be used in boundary-layer stability and transition control. Possible mounting locations built into the aircraft for future projects include hard points in the wings and roof of the fuselage. One of the drawbacks of the aircraft is that it has a canard ahead of the main wing that could disrupt the incoming flow for a wing glove or research requiring test pieces mounted to the hard point in the wing. Therefore, it is necessary to understand the influence the canard and the impact of its wake on the wing of the aircraft before any in-depth aerodynamic research could be completed on the aircraft. A combination of in-flight measurements of the canard wake and Computational Fluid Dynamics (CFD) were used to provide a clear picture of the flowfield around the aircraft. The first step of the project consisted of making a 3-D CAD model of the aircraft. This model was then used for the CFD simulations in Fluent. 2-D, 3-D, inviscid, and viscous simulations were preformed on the aircraft. A pressure rake was designed to house a 5-hole probe and 18 Pitot probes that extended forward of the main wing to measure the location and strength of the canard wake at various flight conditions. There were five primary test points that were recorded at multiple times over the course of three flights. Once all of the data were collected from the flights, the freestream conditions became the inputs into the final, 3-D CFD simulations on the aircraft. The good agreement between the CFD results and the in-flight measurements provided the necessary verification of the CFD model of the aircraft. These results can be used in the future planning and execution of experiments involving the Velocity XL-5 RG.
Schouten, Shane Michael
Elastic and surface energies: Two key parameters for CdSe quantum dot formation
The two-dimensional-three-dimensional transition of a strained CdSe layer on (001) ZnSe induced by the use of amorphous selenium is studied. To precisely control the thickness of the CdSe layer, atomic layer epitaxy growth mode is used. Atomic force microscopy and reflection high-energy electron diffraction measurements reveal the formation of CdSe islands when 3 ML (monolayers) of CdSe, corresponding to the critical thickness, are deposited. When only 2.5 ML of CdSe are deposited another relaxation mechanism is observed, leading to the appearance of strong undulations on the surface. For a 3 ML thick CdSe layer, transmission electron microscopy images indicate that the formation of the islands occurs only after the amorphous selenium desorption.
Robin, Ivan-Christophe; Andre, Regis; Bougerol, Catherine; Aichele, Thomas; Tatarenko, Serge [Laboratoire de Spectrometrie Physique/CNRS UMR5588, Universite Joseph Fourier, Grenoble, BP87, 38402 St. Martin d'Heres (France)
The Impact of the Transient Response of 0rg;anic Light Emitting Diodes on the Design of Active Matrix OLED Displays
The Impact of the Transient Response of 0rg;anic Light Emitting Diodes on the Design of Active, Princeton, NJ, U.S.A. Abstract Much of the organic light emitting diode (OLED) characterization published
CdSxTe1-x Alloying in CdS/CdTe Solar Cells
A CdSxTe1-x layer forms by interdiffusion of CdS and CdTe during the fabrication of thin-film CdTe photovoltaic (PV) devices. The CdSxTe1-x layer is thought to be important because it relieves strain at the CdS/CdTe interface that would otherwise exist due to the 10% lattice mismatch between these two materials. Our previous work [1] has indicated that the electrical junction is located in this interdiffused CdSxTe1-x region. Further understanding, however, is essential to predict the role of this CdSxTe1-x layer in the operation of CdS/CdTe devices. In this study, CdSxTe1-x alloy films were deposited by RF magnetron sputtering and co-evaporation from CdTe and CdS sources. Both radio-frequency-magnetron-sputtered and co-evaporated CdSxTe1-x films of lower S content (x<0.3) have a cubic zincblende (ZB) structure akin to CdTe, while those of higher S content have a hexagonal wurtzite (WZ) structure like that of CdS. Films become less preferentially oriented as a result of a CdCl2 heat treatment at ~400 degrees C for 5 min. Films sputtered in a 1% O2/Ar ambient are amorphous as deposited, but show CdTe ZB, CdS WZ, and CdTe oxide phases after a CdCl2 heat treatment (HT). Films sputtered in O2 partial pressure have a much wider bandgap (BG) than expected. This may be explained by nanocrystalline size effects seen previously [2] for sputtered oxygenated CdS (CdS:O) films.
Duenow, J. N.; Dhere, R. G.; Moutinho, H. R.; To, B.; Pankow, J. W.; Kuciauskas, D.; Gessert, T. A.
Data:9d84b953-0c3d-4222-9cd9-89ad4177cd03 | Open Energy Information
Open Energy Info (EERE)
b953-0c3d-4222-9cd9-89ad4177cd03 b953-0c3d-4222-9cd9-89ad4177cd03 No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: Florence Utility Comm Effective date: 2009/11/30 End date if known: Rate name: Rg-1 Residential Service Rural Rate Area Seasonal Three Phase Sector: Residential Description: Power Cost Adjustment Clause - All metered rates shall be subject to a positive or negative power cost adjustment charge equivalent to the amount by which the current cost of power (per kilowatt-hour of sales) is greater or lesser than the base cost of power purchased (per kilowatt-hour of sales). The base cost of power (U) is $0.0791 per kilowatt-hour.
Strain-dependent photoluminescence behavior in three geometries of CdSe/CdS nanocrystals
X. et al. Shape control of CdSe nanocrystals. Nature 404,of nearly monodisperse CdSe/CdS core/shell nanocrystalsgrowth of highly luminescent CdSe/CdS nanoheterostructures
Choi, Charina L
Data:Dce066cd-9c07-4949-aa43-5e5007829464 | Open Energy Information
Dce066cd-9c07-4949-aa43-5e5007829464 Dce066cd-9c07-4949-aa43-5e5007829464 No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: City of Bangor, Wisconsin (Utility Company) Effective date: 2010/05/19 End date if known: Rate name: Rg-1 Residential Service Single Phase with Parallel Generation(20kW or less) Sector: Residential Description: Application: This rate will be applied to residential single-phase customers for ordinary household purposes. Single-phase motors may not exceed 5 horsepower individual-rated capacity without utility permission. Fixed Monthly Charge includes Commitment to Community Rider: $1.10 per customer per month
Response of Cds/CdTe Devices to Te Exposure of Back Contact: Preprint
Theoretical predictions of thin-film CdS/CdTe photovoltaic (PV) devices have suggested performance may be improved by reducing recombination due to Te-vacancy (VTe) or Te-interstitial (Tei) defects. Although formation of these intrinsic defects is likely influenced by CdTe deposition parameters, it also may be coupled to formation of beneficial cadmium vacancy (VCd) defects. If this is true, reducing potential effects of VTe or Tei may be difficult without also reducing the density of VCd. In contrast, post-deposition processes can sometimes afford a greater degree of defect control. Here we explore a post-deposition process that appears to influence the Te-related defects in polycrystalline CdTe. Specifically, we have exposed the CdTe surface to Te prior to ZnTe:Cu/Ti contact-interface formation with the goal of reducing VTe but without significantly reducing VCd. Initial results show that when this modified contact is used on a CdCl2-treated CdS/CdTe device, significantly poorer device performance results. This suggests two things: First, the amount of free-Te available during contact formation (either from chemical etching or CuTe or ZnTe deposition) may be a more important parameter to device performance than previously appreciated. Second, if processes have been used to reduce the effect of VTe (e.g., oxygen and chlorine additions to the CdTe), adding even a small amount of Te may produce detrimental defects.
Gessert, T. A.; Burst, J. M.; Ma, J.; Wei, S. H.; Kuciauskas, D.; Barnes, T. M.; Duenow, J. N.; Young, M. R.; Rance, W. L.; Li, J. V.; Dippo, P.
On arithmetic partitions of Zn
Generalizing a classical problem in enumerative combinatorics, Mansour and Sun counted the number of subsets of Z"n without certain separations. Chen, Wang, and Zhang then studied the problem of partitioning Z"n into arithmetical progressions of a given ...
Victor J. W. Guo; Jiang Zeng
Investigation of polycrystalline thin film CuInSe{sub 2} solar cells based on ZnSe windows. Annual subcontract report, 15 February, 1993--14 February, 1994
This report concerns studies of CIS solar cells based on ZnSe window layers. ZnSe/CIS devices are fabricated by growing ZnSe films by MOCVD onto Siemens CIS and graded absorber substrates. ZnSe films are grown by reacting H{sub 2}Se with a zinc adduct. ZnSe/CIS heterojunctions have been studied by depositing transparent aluminum contacts onto ZnSe. These studies indicate that ZnSe/CIS solar cells can be fabricated with an efficiency greater than 14%. Open circuit voltages are typically larger than 500 mV and the optimum range of ZnSe film thickness for maximum efficiency is between 100 {angstrom} and 250 {angstrom}. Photocurrents are significantly reduced as the film thickness exceeds 250 {angstrom}. Photoluminescence spectroscopy has been utilized to characterize the physical nature of CIS substrate surfaces, and ZnSe-CIS interfaces. These studies indicate that a segregated phase(s) exists at the surface of as received Siemens substrates. Additionally, it is determined that the segregated phase(s) still exist after the ZnSe growth process. To date, sputtered ZnO top contact layers have caused degradation of the photovoltaic properties of the ZnSe/CIS structure. Investigations of the effects of MOCVD grown ZnO upon ZnSe/CIS structures will soon be initiated. To establish the feasibility of ZnSe as a window layer, cells have been fabricated by incorporating a protective layer of CdS between the ZnSe and ZnO. A total area efficiency of 11% was obtained with such a structure.
Olsen, L.C. [Washington State Univ., Richland, WA (United States)
Processing Effects on Junction Interdiffusion in CdS/CdTe Polycrystalline Devices
The performance of CdS/CdTe solar cells is strongly impacted by the process used to grow the CdS layer. CdS films grown by chemical-bath deposition (CBD) exhibit lower sublimation (CSS).
Albin, D.; Yan, Y.; King, D.; Moutinho, H.; Jones, K.; Matson, R.; Al-Jassim, M.
Thermographic analyses of the growth of Cd1-xZnxTe single crystals
Bulk Cd1-xZnxTe (0Zn content causes non-monotonic dependencies in the quality of the crystals structure.
Kopach, O.V.; Bolotnikov, A.; Shcherbak, Larysa P.; Fochuk, Petro M.; and James, Ralph B.
http://t8web.lanl.gov/people/rajan/http://email@example.com@lanl.gov Energy ENERGY in the 21st Century
.firstname.lastname@example.com@lanl.gov Energy 4.3% growth in 2004 primary energy consumption BP 2005 OIL GAS Nuclear Hydro Coal #12;http://email@example.com@lanl.gov Energy Immediate Options · Clean coal and gas · Nuclear · Wind · Solar and Biomass · Hydro What firstname.lastname@example.com@lanl.gov Energy 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 IGCC Gas SCPVCoal Wind * Hydro Nuclear * COE
Laser-assisted sol-gel growth and characteristics of ZnO thin films
ZnO thin films were grown on Si(100) substrates by a sol-gel method assisted by laser beam irradiation with a 325 nm He-Cd laser. In contrast to conventional sol-gel ZnO thin films, the surface morphology of the laser-assisted sol-gel thin films was much smoother, and the residual stress in the films was relaxed by laser irradiation. The luminescent properties of the films were also enhanced by laser irradiation, especially, by irradiation during the deposition and post-heat treatment stages. The incident laser beam is thought to play several roles, such as annihilating defects by accelerating crystallization during heat treatment, enhancing the surface migration of atoms and molecules, and relaxing the ZnO matrix structure during crystallization.
Kim, Min Su; Kim, Soaram [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae 621-749 (Korea, Republic of); Leem, Jae-Young [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae 621-749 (Korea, Republic of); Department of Nano Engineering, Inje University, Gimhae 621-749 (Korea, Republic of)
Data:8cd33a74-f5cd-467b-b625-9a6c26e658b1 | Open Energy Information
4-f5cd-467b-b625-9a6c26e658b1 4-f5cd-467b-b625-9a6c26e658b1 No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: City of Clintonville, Wisconsin (Utility Company) Effective date: 2006/05/05 End date if known: Rate name: Rg-2 Residential Service Optional Time-of-Day 9am-9pm with Parallel Generation(20kW or less) Sector: Residential Description: Power Cost Adjustment Clause - All metered rates shall be subject to a positive or negative power cost adjustment charge equivalent to the amount by which the current cost of power (per kWh of sales) is greater or lesser than the base cost of power purchased (per kWh of sales). The base cost of power is $0.0680 per kWh. See schedule PCAC.
Anisotropy in CdSe quantum rods
in synthesizing monodisperse CdSe nanorods has allowed us toout the phase diagram of the CdSe nanorod solution in order2. Controlled Synthesis of CdSe Nanorods 2.1 Introduction In
Li, Liang-shi
NETL: CD-ROM Ordering System
CD-DVD Ordering System Publications CD-DVD Ordering System Please complete the following information so the National Energy Technology Lab (NETL) can promptly process your order....
WVU FY 2009Expanding West Virginia's Economy WE s t Vi rg i n i a U n i V E r s i t y
in business volume · $1 billion in employee compensation · $37.1 million in assorted state taxes The economic: · 45,500 jobs · $8.28 billion in business volume · $1.8 billion in employee compensation · $69 millionWVU FY 2009Expanding West Virginia's Economy WE s t Vi rg i n i a U n i V E r s i t y: amy
Mohaghegh, Shahab
Data:5c5fab7d-4cd2-4db7-95da-8c165266d982 | Open Energy Information
fab7d-4cd2-4db7-95da-8c165266d982 fab7d-4cd2-4db7-95da-8c165266d982 No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: City of Argyle, Wisconsin (Utility Company) Effective date: 2008/05/29 End date if known: Rate name: Rg-1 Residential Service Three Phase Sector: Residential Description: Application: This rate will be applied to residential single-phase customers for ordinary household purposes. Single-phase motors may not exceed 5 horsepower individual-rated capacity without utility permission. Customers who do not meet these criteria will be served under the applicable rate. Fixed Monthly Charge includes Commitment to Community Rider: $1.34 per customer per month
Data:F86ebf17-260f-488e-842f-1883b11fa1cd | Open Energy Information
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Technology Transfer Office University of Reading, Blandford Lodge, Whiteknights, Reading, RG6 6AH Tel: +44 (0)118 935 7100 Email: email@example.com www.reading.ac.uk/working-with-business
Tel: +44 (0)118 935 7100 Email: firstname.lastname@example.com www of Reading, Blandford Lodge, Whiteknights, Reading, RG6 6AH Tel: +44 (0)118 935 7100 Email: techtransfer
Reading, University of
Doped colloidal ZnO nanocrystals
Colloidal ZnO nanocrystals are promising for a wide range of applications due to the combination of unique multifunctional nature and remarkable solution processability. Doping is an effective approach of enhancing the properties of colloidal ZnO nanocrystals ...
Yizheng Jin; Yuping Ren; MoTao Cao; Zhizhen Ye
Fermilab Physics CD-ROM
Education Office has transferred the three activities below from its website (www-ed.fnal.gov) to a CD-Rom for classroom use. Fermilabyrinth is targeted, but not limited to a...
CdTeportfoliooffers%commercialready %highefficiencysolar %
deposited#by#close#space# ... National#Renewable#Energy#Laboratory# email@example.com# 303B275B3166# Title: CdTe portfolio offers commercial ready high efficiency solar
The effects of the band bending caused by interface states in CdTe and CIS solar cells
In this paper, the effects of interface states in the Z-nO/CdS/CuinSe{sub 2}, and CdS/CdTe solar cells are presented. The effects are investigated through numerical modeling using ADEPT (A Device Emulation Program and Tool). The results show that donor-like interface states have very little effect but acceptor-like interface states at the resistive ZnO/CdS can cause pinning of the bands at the interface, thus leading to non-exponential illuminated I-V curves when the interface state densities are high enough. High density of acceptor-like states between the CdS and In-rich CIS does not result in the two-diode like IV curves. Instead they can significantly lower the fill factor. In the CdS/CdTe solar cells. either donor- or acceptor-like interface states have little effect since almost all the depletion region lies in the CdTe. Thus, the metallurgical junction where the interface states are located is away from the electrical junction where the conductivity type changes.
Lee, Youn-Jung; Gray, J.L. [Purdue Univ., Lafayette, IN (United States). School of Electrical Engineering
CdS/CdTe Solar Cells Containing Directly Deposited CdSxTe1-x Alloy Layers: Preprint
A CdSxTe1-x layer forms by interdiffusion of CdS and CdTe during the fabrication of thin-film CdTe photovoltaic (PV) devices. The CdSxTe1-x layer is thought to be important because it relieves strain at the CdS/CdTe interface that would otherwise exist due to the 10% lattice mismatch between these two materials. Our previous work [1] has indicated that the electrical junction is located in this interdiffused CdSxTe1-x region. Further understanding, however, is essential to predict the role of this CdSxTe1-x layer in the operation of CdS/CdTe devices. In this study, CdSxTe1-x alloy films were deposited by radio-frequency (RF) magnetron sputtering and co-evaporation from CdTe and CdS sources. Both RF-magnetron-sputtered and co-evaporated CdSxTe1-x films of lower S content (x<0.3) have a cubic zincblende (ZB) structure akin to CdTe, whereas those of higher S content have a hexagonal wurtzite (WZ) structure like that of CdS. Films become less preferentially oriented as a result of a CdCl2 heat treatment (HT) at ~400 degrees C for 5 min. Films sputtered in a 1% O2/Ar ambient are amorphous as deposited, but show CdTe ZB, CdS WZ, and CdTe oxide phases after a CdCl2 HT. Films sputtered in O2 partial pressure have a much wider bandgap than expected. This may be explained by nanocrystalline size effects seen previously [2] for sputtered oxygenated CdS (CdS:O) films. Initial PV device results show that the introduction of a directly-deposited CdSxTe1-x alloy layer into the device structure produces devices of comparable performance to those without the alloy layer when a CdCl2 HT is performed. Further investigation is required to determine whether the CdCl2 heat treatment step can be altered or eliminated through direct deposition of the alloy layer.
Strain-Dependent Photoluminescence Behavior of CdSe/CdS Nanocrystals with Spherical, Linear, and Branched Topologies
emission peak maxima for CdSe/CdS rods of different lengthsfluorescence spectra of bare zb-CdSe dots in a diamond anvilPhotoluminescence Behavior of CdSe/CdS Nanocrystals with
Choi, Charina L.
Patterned three-color ZnCdSeZnCdMgSe quantum-well structures for integrated full-color and white light emitters
. This result demonstrates the feasibility of fabricating integrated full-color light emitting diode and laser American Institute of Physics. S0003-6951 00 04149-8 Light emitting diodes LEDs and laser diodes LDs having
ZnO PN Junctions for Highly-Efficient, Low-Cost Light Emitting Diodes
By 2015, the US Department of Energy has set as a goal the development of advanced solid state lighting technologies that are more energy efficient, longer lasting, and more cost-effective than current technology. One approach that is most attractive is to utilize light-emitting diode technologies. Although III-V compound semiconductors have been the primary focus in pursuing this objective, ZnO-based materials present some distinct advantages that could yield success in meeting this objective. As with the nitrides, ZnO is a direct bandgap semiconductor whose gap energy (3.2 eV) can be tuned from 3.0 to 4 eV with substitution of Mg for higher bandgap, Cd for lower bandgap. ZnO has an exciton binding energy of 60 meV, which is larger than that for the nitrides, indicating that it should be a superior light emitting semiconductor. Furthermore, ZnO thin films can be deposited at temperatures on the order of 400-600 C, which is significantly lower than that for the nitrides and should lead to lower manufacturing costs. It has also been demonstrated that functional ZnO electronic devices can be fabricated on inexpensive substrates, such as glass. Therefore, for the large-area photonic application of solid state lighting, ZnO holds unique potential. A significant impediment to exploiting ZnO in light-emitting applications has been the absence of effective p-type carrier doping. However, the recent realization of acceptor-doped ZnO material overcomes this impediment, opening the door to ZnO light emitting diode development In this project, the synthesis and properties of ZnO-based pn junctions for light emitting diodes was investigated. The focus was on three issues most pertinent to realizing a ZnO-based solid state lighting technology, namely (1) achieving high p-type carrier concentrations in epitaxial and polycrystalline films, (2) realizing band edge emission from pn homojunctions, and (3) investigating pn heterojunction constructs that should yield efficient light emission. The project engaged established expertise at the University of Florida in ZnO film growth (D. Norton), device fabrication (F. Ren) and wide bandgap photonics (S. Pearton). It addressed p-type doping and junction formation in (Zn,Mg)O alloy thin films. The project employed pulsed laser deposition for film growth. The p-type dopant of interest was primarily phosphorus, given the recent results in our laboratory and elsewhere that this anions can yield p-type ZnO-based materials. The role of Zn interstitials, oxygen vacancies, and/or hydrogen complexes in forming compensating shallow donor levels imposes the need to simultaneously consider the role of in situ and post-growth processing conditions. Temperature-dependent Hall, Seebeck, C-V, and resistivity measurements was used to determine conduction mechanisms, carrier type, and doping. Temperature-dependent photoluminescence was used to determine the location of the acceptor level, injection efficiency, and optical properties of the structures. X-ray diffraction will used to characterize film crystallinity. Using these materials, the fabrication and characterization of (Zn,Mg)O pn homojunction and heterojunction devices was pursued. Electrical characterization of the junction capacitance and I-V behavior was used to extract junction profile and minority carrier lifetime. Electroluminescence from biased junctions was the primary property of interest.
David P. Norton; Stephen Pearton; Fan Ren
www.mdpi.com/journal/ijms Cytotoxic Effects of CdSe Quantum Dots on Maturation of Mouse Oocytes, Fertilization, and Fetal Development
Abstract: Quantum dots (QDs) are useful novel luminescent markers, but their embryonic toxicity is yet to be fully established, particularly in oocyte maturation and sperm fertilization. Earlier experiments by our group show that CdSe-core QDs have cytotoxic effects on mouse blastocysts and are associated with defects in subsequent development. Here, we further investigate the influence of CdSe-core QDs on oocyte maturation, fertilization, and subsequent pre- and postimplantation development. CdSe-core QDs induced a significant reduction in the rates of oocyte maturation, fertilization, and in vitro embryo development, but not ZnS-coated CdSe QDs. Treatment of oocytes with 500 nM CdSe-core QDs during in vitro maturation (IVM) led to increased resorption of postimplantation embryos and decreased placental and fetal weights. To our knowledge, this is the first study to report the negative impact of CdSe-core QDs on mouse oocyte development. Moreover, surface modification of CdSe-core QDs with ZnS effectively prevented this cytotoxicity.
Ming-shu Hsieh; Nion-heng Shiao; Wen-hsiung Chan
Development of Substrate Structure CdTe Photovoltaic Devices with Performance Exceeding 10%: Preprint
Most work on CdTe-based solar cells has focused on devices with a superstrate structure. This focus is due to the early success of the superstrate structure in producing high-efficiency cells, problems of suitable ohmic contacts for lightly doped CdTe, and the simplicity of the structure for manufacturing. The development of the CdCl2 heat treatment boosted CdTe technology and perpetuated the use of the superstrate structure. However, despite the beneficial attributes of the superstrate structure, devices with a substrate structure are attractive both commercially and scientifically. The substrate structure eliminates the need for transparent superstrates and thus allows the use of flexible metal and possibly plastic substrates. From a scientific perspective, it allows better control in forming the junction and direct access to the junction for detailed analysis. Research on such devices has been limited. The efficiency of these devices has been limited to around 8% due to low open-circuit voltage (Voc) and fill factor. In this paper, we present our recent device development efforts at NREL on substrate-structure CdTe devices. We have found that processing parameters required to fabricate high-efficiency substrate CdTe PV devices differ from those necessary for traditional superstrate CdTe devices. We have worked on a variety of contact materials including Cu-doped ZnTe and CuxTe. We will present a comparative analysis of the performance of these contacts. In addition, we have studied the influence of fabrication parameters on junction properties. We will present an overview of our development work, which has led to CdTe devices with Voc values of more than 860 mV and NREL-confirmed efficiencies approaching 11%.
Dhere, R. G.; Duenow, J. N.; DeHart, C. M.; Li, J. V.; Kuciauskas, D.; Gessert, T. A.
High efficiency thin film CdTe and a-Si based solar cells
This report describes work done by the University of Toledo during the first year of this subcontract. During this time, the CdTe group constructed a second dual magnetron sputter deposition facility; optimized reactive sputtering for ZnTe:N films to achieve 10 ohm-cm resistivity and {approximately}9% efficiency cells with a copper-free ZnTe:N/Ni contact; identified Cu-related photoluminescence features and studied their correlation with cell performance including their dependence on temperature and E-fields; studied band-tail absorption in CdS{sub x}Te{sub 1{minus}x} films at 10 K and 300 K; collaborated with the National CdTe PV Team on (1) studies of high-resistivity tin oxide (HRT) layers from ITN Energy Systems, (2) fabrication of cells on the HRT layers with 0, 300, and 800-nm CdS, and (3) preparation of ZnTe:N-based contacts on First Solar materials for stress testing; and collaborated with Brooklyn College for ellipsometry studies of CdS{sub x}Te{sub 1{minus}x} alloy films, and with the University of Buffalo/Brookhaven NSLS for synchrotron X-ray fluorescence studies of interdiffusion in CdS/CdTe bilayers. The a-Si group established a baseline for fabricating a-Si-based solar cells with single, tandem, and triple-junction structures; fabricated a-Si/a-SiGe/a-SiGe triple-junction solar cells with an initial efficiency of 9.7% during the second quarter, and 10.6% during the fourth quarter (after 1166 hours of light-soaking under 1-sun light intensity at 50 C, the 10.6% solar cells stabilized at about 9%); fabricated wide-bandgap a-Si top cells, the highest Voc achieved for the single-junction top cell was 1.02 V, and top cells with high FF (up to 74%) were fabricated routinely; fabricated high-quality narrow-bandgap a-SiGe solar cells with 8.3% efficiency; found that bandgap-graded buffer layers improve the performance (Voc and FF) of the narrow-bandgap a-SiGe bottom cells; and found that a small amount of oxygen partial pressure ({approximately}2 {times} 10{sup {minus}5} torr) was beneficial for growing high-quality films from ITO targets.
Compaan, A. D.; Deng, X.; Bohn, R. G.
Micro-PL Studies of Polycrustalline CdS/CdTe Interfaces
We describe a technique of photoluminescence measurements with a resolutiion of microns. This technique is applied to examine the CdS/CdTe interface of CdTe solar cells.
Dhere, R.; Cheong, M.; Smith, S.; Albin, D.; Mascarenhas, A.; Gessert, T. A.
A CD19/Fc fusion protein for detection of anti-CD19 chimeric antigen receptors
Oliveira et al. : A CD19/Fc fusion protein for detection ofof the CD19-IgG 1 Fc fusion was performed under denatur- ingOpen Access A CD19/Fc fusion protein for detection of anti-
De Oliveira, Satiro N; Wang, Jiexin; Ryan, Christine; Morrison, Sherie L; Kohn, Donald B; Hollis, Roger P
Defect Levels of Indium-doped CdMnTe Crystals
Using photoluminescence (PL) and current deep-level transient spectroscopy (I-DLTS), we investigated the electronic defects of indium-doped detector-grade CdMnTe:In (CMT:In) crystals grown by the vertical Bridgman method. We similarly analyzed CdZnTe:In (CZT:In) and undoped CdMnTe (CMT) crystals grown under the amount of same level of excess Te and/or indium doping level to detail the fundamental properties of the electronic defect structure more readily. Extended defects, existing in all the samples, were revealed by synchrotron white beam x-ray diffraction topography and scanning electron microscopy. The electronic structure of CMT is very similar to that of CZT, with shallow traps, A-centers, Cd vacancies, deep levels, and Te antisites. The 1.1-eV deep level, revealed by PL in earlier studies of CZT and CdTe, were attributed to dislocation-induced defects. In our I-DLTS measurements, the 1.1-eV traps showed different activation energies with applied bias voltage and an exponential dependence on the trap-filling time, which are typical characteristics of dislocation-induced defects. We propose a new defect-trap model for indium-doped CMT crystals.
K Kim; A Bolotinikov; G Camarda; R Gul; A Hossain; G Yang; Y Cui; R James
Emerging Materials CD-ROM
The cost per CD-ROM will be $150 with a student price of $75. ... 7th Global Innovations Symposium: Trends in Materials R&D for Sensor ... Applications; Advanced Materials for Energy Conversion III: A Symposium in Honor of Gary Sandrock,�...
ZnS/Zn(O,OH)S-based buffer layer deposition for solar cells
The invention provides CBD ZnS/Zn(O,OH)S and spray deposited ZnS/Zn(O,OH)S buffer layers prepared from a solution of zinc salt, thiourea and ammonium hydroxide dissolved in a non-aqueous/aqueous solvent mixture or in 100% non-aqueous solvent. Non-aqueous solvents useful in the invention include methanol, isopropanol and triethyl-amine. One-step deposition procedures are described for CIS, CIGS and other solar cell devices.
Bhattacharya, Raghu N. (Littleton, CO)
AOCS Official Method Cd 22-91
AOCS Official Method Cd 22-91 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads AOCS DEFINITION...
Focus on Omega-3 CD-ROM
With this CD, users can easily access and evaluate information on the rapidly growing interest in benefits from omega-3 fats, a recent topic in the fats and oils field. Focus on Omega-3 CD-ROM Health Nutrition Biochemistry Omega 3 DVD & CD-ROMs Healt
Charge transport in mixed CdSe and CdTe colloidal nanocrystal films
We report the influence of trap states on charge transport through films of mixed CdTe and CdSe nanocrystals (NCs) between lateral electrodes, through layered films of CdTe and CdSe NCs in a layered geometry, and through ...
Bawendi, Moungi G.
Semiconductor photocatalysis has been identified as a promising avenue for the conversion of solar energy into environmentally friendly fuels, most notably by the production of hydrogen from water.[1-5] Nanometer-scale materials in particular have attracted considerable scientific attention as the building blocks for light-harvesting applications.[6,7] Their desirable attributes include tunability of the optical properties with size, amenability to relatively inexpensive low-temperature processing, and a high degree of synthetic sophistication leading to increasingly complex and multi-functional architectures. For photocatalysis in particular, the high surface-to-volume ratios in nanoscale materials should lead to an increased availability of carriers for redox reactions on the nanoparticle surface. Recombination of photoexcited carriers directly competes with photocatalytic activity.[3] Charge separation is often achieved with multi-component heterostructures. An early example is the case of TiO2 powders functionalized with Pt and RuO2 particles, where photoexcited electrons are transferred to Pt (the reduction site) and holes to RuO2 (the oxidation site).[8] More recently, many colloidally synthesized nanometer-scale metal-semiconductor heterostructures have been reported.[7,9,10] A majority of these structures are made by thermal methods.[7,10] We have chosen to study photochemical formation of metal-semiconductor heterostructures. The detailed understanding of the mechanisms involved in photodeposition of metals on nanometer-scale semiconductors is necessary to enable a high degree of synthetic control. At the same time, because the results of metal deposition can be directly observed by electron microscopy, it can be used to understand how factors such as nanocrystal composition, shape, carrier dynamics, and surface chemistry influence the photochemical properties of semiconductor nanocrystals. In this communication, we report on the photodeposition of Pt on colloidal CdS and CdSe/CdS core/shell nanocrystals. Among the II-VI semiconductors, CdS is of particular interest because it has the correct band alignment for water photolysis[2] and has been demonstrated to be photocatalytically active.[11-16] We have found that the photoexcitation of CdS and CdSe/CdS in the presence of an organometallic Pt precursor leads to deposition of Pt nanoparticles on the semiconductor surface. Stark differences are observed in the Pt nanoparticle location on the two substrates, and the photodeposition can be completely inhibited by the modification of the semiconductor surface. Our results suggest that tuning of the semiconductor band structure, spatial organization and surface chemistry should be crucial in the design of photocatalytic nanostructures.
Dukovic, Gordana; Merkle, Maxwell G.; Nelson, James H.; Hughes, Steven M.; Alivisatos, A. Paul
Critical Decision 4 (CD-4) Approval Template | Department of...
4 (CD-4) Approval Template Critical Decision 4 (CD-4) Approval Template ExampleCD-4Template02-14-12.docx More Documents & Publications Critical Decision 2 (CD-2...
Critical Decision 2 (CD-2) Approval Template | Department of...
2 (CD-2) Approval Template Critical Decision 2 (CD-2) Approval Template ExampleCD-2Template02-14-12.docx More Documents & Publications Critical Decision 4 (CD-4...
PARS II Process Document - Project Phasing (Multiple CD-2 from...
Project Phasing (Multiple CD-2 from Single CD-1) PARS II Process Document - Project Phasing (Multiple CD-2 from Single CD-1) This document details the process by which projects...
Two Homologous Intermetallic Phases in the Na-Au-Zn System with Sodium Bound in Unusual Paired Sites within 1D Tunnels
The Na-Au-Zn system contains the two intermetallic phases Na(0.97(4))Au(2)Zn(4)(I) and Na(0.72(4))Au(2)Zn(2)(II) that are commensurately and incommensurately modulated derivatives of K(0.37)Cd(2), respectively. Compound I crystallizes in tetragonal space group P4/mbm (No. 127), a = 7.986(1) �, c = 7.971(1) �, Z = 4, as a 1 � 1 � 3 superstructure derivative of K(0.37)Cd(2)(I4/mcm). Compound II is a weakly incommensurate derivative of K(0.37)Cd(2) with a modulation vector q = 0.189(1) along c. Its structure was solved in superspace group P4/mbm(00g)00ss, a = 7.8799(6) �, c = 2.7326(4) �, Z = 2, as well as its average structure in P4/mbm with the same lattice parameters.. The Au-Zn networks in both consist of layers of gold or zinc squares that are condensed antiprismatically along c ([Au(4/2)Zn(4)Zn(4)Au(4/2)] for I and [Au(4/2)Zn(4)Au(4/2)] for II) to define fairly uniform tunnels. The long-range cation dispositions in the tunnels are all clearly and rationally defined by electron density (Fourier) mapping. These show only close, somewhat diffuse, pairs of opposed, ?50% occupied Na sites that are centered on (I)(shown) or between (II) the gold squares. Tight-binding electronic structure calculations via linear muffin-tin-orbital (LMTO) methods, assuming random occupancy of ? ?100% of nonpaired Na sites, again show that the major Hamilton bonding populations in both compounds arise from the polar heteroatomic Au-Zn interactions. Clear Na-Au (and lesser Na-Zn) bonding is also evident in the COHP functions. These two compounds are the only stable ternary phases in the (Cs,Rb,K,Na)-Au-Zn systems, emphasizing the special bonding and packing requirements in these sodium structures
Samal, Saroj L.; Lin, Qisheng; Corbett, John D.
P2.19 MOCVD Growth of ZnO/ZnS Core-Shell Nanowires Arrays for ...
Dye sensitized solar cells have also been demonstrated using ZnO nanotips grown ... Their application in photovoltaic devices of the type GZO/ZnO-ZnS/Ag and�...
Application of ZnO Nanowires for Energy Harvesting Technology
The electric energy from ZnO nanowire can also be stored to power light emitting diode. This nanotechnology demonstrated with ZnO nanowires implies feasible�...
Core Excitation in 98Cd
Using a {sup 58}Ni({sup 46}Ti, {alpha}2n) reaction, a total of 24 different residual nuclei were identified. Among them were {sup 98}Cd and {sup 97}Ag. The level scheme of {sup 98}Cd was extended to J{sup {pi}}=(15{sup +}). An isomeric state at 6634 keV excitation energy was confirmed. This state decays by a 4207 keV transition feeding the known 8{sup +} state. The level scheme of {sup 97}Ag was also extended to J{sup {pi}}=(33/2{sup +}) and the half-lives of two isomeric states were measured. Experimental energies of the excited states were compared with the results of ab initio shell-model calculations based on a realistic two-nucleon interaction. The Gammasphere Ge array, coupled with the Microball and the Neutron Shell ancillary particle detectors, was used at the 88 inch cyclotron at Lawrence Berkeley National Laboratory, USA.
Vencelj, Matjaz [ORNL; Baktash, Cyrus [ORNL; Fallon, Paul [ORNL; Hausladen, Paul [ORNL; Likar, A. [Oak Ridge National Laboratory (ORNL); Lipoglavsek, Matej [ORNL; Yu, Chang-Hong [ORNL
Cd-Hg (Cadmium - Mercury)
Cd-Hg crystallographic data...0 to 37 hP 2 P 6 3 / mmc �? 42 to 94 tI 2 I 4/ mmm �?�?� 47 to 56 tI 6 I 4/ mmm �?�?� 71 to 81 tI 6 I 4/ mmm (αHg) (a) 98 to 100 hR 1 R m (βHg) (b) ~100 tI 2 I 4/ mmm (a) From -38.8290
X-Ray Diffraction Imaging of Improved Bulk Grown CdZnTe (211)
Accelerated Light Induced Degradation, ALID, for Monitoring of Defects in PV Silicon ... Silicon Solar Cells Evaluated by LBIC and Equivalent Circuit Model.
... the data are then �pixellated� using the ... coordinates of the center of the pixel face, ... it is always preferable to have higher energy ...
direction and rate of groundwater movement. Based on the results of laboratory and field testing of hydraulic conductivity of the glacial materials * PT0844WP313433Chapter.07...
the total capacity, in gallons, of all the fuel oil storage tanks? GALLONS OF TOTAL FUEL OIL STORAGE TANK CAPACITY DON'T KNOW. ... 9-8 (1086) 18 19 294 NBECS:...
Domain patterning in lithium niobate using spontaneous backswitching R.G. Batchko*, G.D. Millerb, V. Ya. Shur', E. L. Rumyantsevc M.M. Fejer', and R.L. Byera
Domain patterning in lithium niobate using spontaneous backswitching R.G. Batchko*, G.D. Millerb, V enables the fabrication of periodically-poled lithium niobate (PPLN) down to generally 6 micron: Periodically-poled, lithium niobate, second harmonic generation, blue light, backswitching 1. INTRODUCTION
Byer, Robert L.
Recycling of CdTe photovoltaic waste
A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate and electrolyzing the leachate to separate Cd from Te, wherein the Te is deposits onto a cathode while the Cd remains in solution.
Goozner, Robert E. (Charlotte, NC); Long, Mark O. (Charlotte, NC); Drinkard, Jr., William F. (Charlotte, NC)
AOCS Official Method Cd 11-57
a-Monoglycerides AOCS Official Method Cd 11-57 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads AOCS DEFINITION This method determines ?-mo
AOCS Official Method Cd 7-58
Polyunsaturated Acids, Ultraviolet Spectrophotometric Method AOCS Official Method Cd 7-58 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads DEFINITION The conjugated constitu
Fleet Test & Evaluation (CD-ROM)
CD contains an extensive list of fact sheets and technical reports about the work performed by the team in the areas of light- and heavy-duty vehicles.
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AOCS Official Method Cd 8b-90
Peroxide Value Acetic Acid-Isooctane Method AOCS Official Method Cd 8b-90 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads DEFINITION This method determine
AOCS Official Method Cd 14-95
Isolated trans Isomers Infrared Spectrometric Method AOCS Official Method Cd 14-95 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads DEFINITION Isolated trans bonds
Transparent p-ZnO by oxidation of Zn-based compounds
We report on the fabrication of ZnO:N by thermal oxidation of Zn-based compounds. In particular, we achieved p-type conductivity with carrier concentration in mid 1017 cm-3 range and mobility of {approx}10 cm2/Vs using sputter-deposited zinc nitride as starting material. The transmittance of p-ZnO:N in the whole visible spectrum is 70-80% making it very interesting for transparent electronics.
Kaminska, E.; Piotrowska, A.; Kowalczyk, E. [Institute of Electron Technology, Warsaw (Poland); Kossut, J. [Institute of Physics, Polish Academy of Sciences, Warsaw (Poland); ERATO Semiconductor Spintronics (Poland); Przezdziecka, E.; Dobrowolski, W.; Dynowska, E.; Butkute, R.; Jakiela, R.; Aleszkiewicz, M.; Janik, E. [Institute of Physics, Polish Academy of Sciences, Warsaw (Poland); Barcz, A. [Institute of Electron Technology, Warsaw, (Poland); Institute of Physics, Polish Academy of Sciences, Warsaw (Poland)
Investigation of polycrystalline thin-film CuInSe{sub 2} solar cells based on ZnSe windows. Annual subcontract report, 15 Febraury 1992--14 February 1993
Investigations of ZnSe/CIS solar cells are being carried out in an effort to improve the efficiencies CIS cells and to determine if ZnSe is a viable alternative to CdS as a window material. MOCVD growth of ZnSe is accomplished in a SPIRE 500XT reactor housed in the Electronic Materials Laboratory at WSU Tri-Cities by reacting a zinc adduct with H{sub 2}Se. Conductive n-type ZnSe is grown by using iodine as a dopant. Ethyliodide was mixed with helium and installed on one of the gas lines to the system. ZnSe films have been grown on CIS substrates at 200{degrees}C to 250{degrees}C. ZnO is also being deposited by MOCVD by reacting tetrahydrofuran (THF) with a zinc adduct. ZnSe/CIS heterojunctions have been studied by growing n-ZnSe films onto 2 cm x 2 cm CIS substrates diced from materials supplied by Siemens and then depositing an array of aluminum circular areas 2.8.mm in diameter on top of the ZnSe to serve as contacts. Al films are deposited with a thickness of 80 to l00 {angstrom}so that light can pass through the film, thus allowing the illuminated characteristics of the ZnSe/CIS junction to be tested. Accounting for the 20 to 25 % transmittance through the Al film into the ZnSe/CIS structure, current devices have estimated, active-area AM1.5 efficiencies of 14 %. Open circuit voltages > 500 mV are often attained.
Olsen, L C [Washington State Univ. at Tri-Cities, Richland, WA (United States)
Surface morphologies of homoepitaxial ZnO on Zn- and O-polar substrates by plasma assisted molecular beam epitaxy
Homoepitaxial ZnO layers are grown on Zn-polar (0001) and O-polar (0001) surfaces of single crystal ZnO substrates by plasma assisted molecular beam epitaxy. It is found that the growth conditions to obtain smooth surfaces are significantly different for the two surface polarities. For growth on Zn-polar surface, moderate temperature (650 deg. C) and highly O-rich condition (low Zn/O{sub 2}) are required, while high temperature (1000-1050 deg. C) and Zn-rich condition (high Zn/O{sub 2} ratio) are essential for growth on O-polar surfaces.
Xu Huaizhe; Ohtani, K.; Yamao, M.; Ohno, H. [Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)
Preparation and Electrical Property of Co-Zn Oxides and Ni-Zn ...
Digital multimeter was used to measure the electrical resistivity of the samples. The lowest electrical resistivity is Co : Zn = 2 : 1 as the anode material of cathodic �...
Effects of Surface Composition on CdTe/CdS Device Performance
The atomic composition of the back surface of the CdTe layer in a CdTe/CdS photovoltiac (PV) device has a significant influence on the quality of the electrical contact to this layer. This paper reports the results of a systematic study that correlates the composition of the back surface with pre-contact processing and device performance.
Levi, D.; Albin, D.; King, D.
Corrosion analysis of Zn �Sn alloys
The EIS spectrums were adjusted according two equivalent circuit models, R(RQ) ... by Combining Thermoelectric Materials and Dye-Sensitized Solar Cell in Series ... Investigation on the activation energy of ZnO Thin-Film Transistors with Hf�...
ZnSe light?emitting diodes
We report the successful fabrication of ZnSe p?n junction light?emitting diodes in which Li and Cl are used as p?type and n?type dopants
J. Ren; K. A. Bowers; B. Sneed; D. L. Dreifus; J. W. Cook Jr.; J. F. Schetzina; R. M. Kolbas
Seeded Growth of Highly Luminescent CdSe/CdS Nano-Heterostructures with Rod and Tetrapod Morphologies
image of a central part of CdSe/CdS nano-tetrapod showingof toluene solutions of CdSe/CdS nano-tetrapods with 50 nmlong arms grown from 3.6 nm zb-CdSe seeds. Gray line shows
Talapin, Dmitri
AOCS Official Method Cd 21-91
Determination of Benzo(a)pyrene in Edible Oils and Fats AOCS Official Method Cd 21-91 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads B986B84E061336764FA4C8F794F8C709 MC-CD2191 2266
Business of Fats & Oils CD-ROM
Business-related issues�how to pitch the benefits and attributes of your product or idea, going from patents to labeling to innovative business practices�you�ll find them on AOCS� new CD-ROM, Business of Fats and Oils. Business of Fats & Oils CD-ROM DVD &
Unique Challenges Accompany Thick-Shell CdSe/nCdS (n > 10) Nanocrystal Synthesis
Thick-shell CdSe/nCdS (n {ge} 10) nanocrystals were recently reported that show remarkably suppressed fluorescence intermittency or 'blinking' at the single-particle level as well as slow rates of Auger decay. Unfortunately, whereas CdSe/nCdS nanocrystal synthesis is well-developed up to n {le} 6 CdS monolayers (MLs), reproducible syntheses for n {ge} 10 MLs are less understood. Known procedures sometimes result in homogeneous CdS nucleation instead of heterogeneous, epitaxial CdS nucleation on CdSe, leading to broad and multimodal particle size distributions. Critically, obtained core/shell sizes are often below those desired. This article describes synthetic conditions specific to thick-shell growth (n {ge} 10 and n {ge} 20 MLs) on both small (sub2 nm) and large (>4.5 nm) CdSe cores. We find added secondary amine and low concentration of CdSe cores and molecular precursors give desired core/shell sizes. Amine-induced, partial etching of CdSe cores results in apparent shell-thicknesses slightly beyond those desired, especially for very-thick shells (n {ge} 20 MLs). Thermal ripening and fast precursor injection lead to undesired homogeneous CdS nucleation and incomplete shell growth. Core/shells derived from small CdSe (1.9 nm) have longer PL lifetimes and more pronounced blinking at single-particle level compared with those derived from large CdSe (4.7 nm). We expect our new synthetic approach will lead to a larger throughput of these materials, increasing their availability for fundamental studies and applications.
Guo, Y; Marchuk, K; Abraham, R; Sampat, S; Abraham, R.; Fang, N; Malko, AV; Vela, J
Rhombohedrally Distorted ?-Au5-xZn8+y Phases in the Au-Zn System
The region of the Au�Zn phase diagram encompassing ?-brass-type phases has been studied experimentally from 45 to 85 atom % Zn. The ? phases were obtained directly from the pure elements by heating to 680 �C in evacuated silica tubes, followed by annealing at 300 �C. Powder X-ray and single-crystal diffraction studies show that ?-�Au5Zn8� phases adopt a rhombohedrally distorted Cr5Al8 structure type rather than the cubic Cu5Zn8 type. The refined compositions from two single crystals extracted from the Zn- and Au-rich loadings are Au4.27(3)Zn8.26(3)?0.47 (I) and Au4.58(3)Zn8.12(3)?0.3 (II), respectively (? = vacancy). These (I and II) refinements indicated both nonstatistical mixing of Au and Zn atoms as well as partially ordered vacancy distributions. The structures of these ? phases were solved in the acentric space group R3m (No. 160, Z = 6), and the observed lattice parameters from powder patterns were found to be a = 13.1029(6) and 13.1345(8) � and c = 8.0410(4) and 8.1103(6) � for crystals I and II, respectively. According to single-crystal refinements, the vacancies were found on the outer tetrahedron (OT) and octahedron (OH) of the 26-atom cluster. Single-crystal structural refinement clearly showed that the vacancy content per unit cell increases with increasing Zn, or valence-electron concentration. Electronic structure calculations, using the tight-binding linear muffin-tin orbital method with the atomic-sphere approximation (TB-LMTO-ASA) method, indicated the presence of a well-pronounced pseudogap at the Fermi level for �Au5Zn8� as the representative composition, an outcome that is consistent with the Hume�Rothery interpretation of ? brass.
Thimmaiah, Srinivasa [Ames Laboratory; Miller, Gordon J. [Ames Laboratory
Investigation of Junction Properties of CdS/CdTe Solar Cells and their Correlation to Device Properties (Presentation)
The objective of the Junction Studies are: (1) understand the nature of the junction in the CdTe/CdS device; (2) correlate the device fabrication parameters to the junction formation; and (3) develop a self consistent device model to explain the device properties. Detailed analysis of CdS/CdTe and SnO{sub 2}/CdTe devices prepared using CSS CdTe is discussed.
Dhere, R. G.; Zhang, Y.; Romero, M. J.; Asher, S. E.; Young, M.; To, B.; Noufi, R.; Gessert, T. A.
Formation and Characterization of CdSxTe1-x Alloys Prepared from Thin Film Couples of CdS and CdTe: Preprint
This conference paper describes the alloying between CdS and CdTe at the CdS/CdTe interface is a function of the growth temperature and post-deposition CdCl2 heat treatment (HT). In devices prepared by different techniques, Te-rich CdSxTe1-x alloys with x= 0.04 to 0.08 have been identified. We present our work on thin-film couples of CdS and CdTe, which can withstand higher level of CdCl2 treatment without the adhesion problems typically encountered in the regular device structure. CdS films with a thickness of {approx}100 nm were deposited by chemical-bath deposition on glass/SnO2 substrates, and CdTe films with a thickness of 300 and 800 nm were deposited by close-spaced sublimation. The samples were treated in the presence of vapor CdCl2 at 400-450 C for 5 min. X-ray diffraction and optical analysis of the samples showed that S content in the CdSxTe1-x alloy increased systematically with the CdCl2 HT temperature. CdSxTe1-x alloy with x= 0.14 was identified for the samples treated at 4 30C, which is much higher than expected from the miscibility gap at 430C.
Dhere, R.; Wu, X.; Albin, D.; Perkins, C.; Moutinho, H.; Gessert, T.
Junction Evolution During Fabrication of CdS/CdTe Thin-film PV Solar Cells (Presentation)
Discussion of the formation of CdTe thin-film PV junctions and optimization of CdTe thin-film PV solar cells.
Gessert, T. A.
A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the metals in dilute nitric acid, leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate, adding a calcium containing base to the leachate to precipitate Cd and Te, separating the precipitated Cd and Te from the leachate, and recovering the calcium-containing base.
A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the metals in dilute nitric acid, leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate, adding a calcium containing base to the leachate to precipitate Cd and Te, separating the precipitated Cd and Te from the leachate, and recovering the calcium-containing base. 3 figs.
Goozner, R.E.; Long, M.O.; Drinkard, W.F. Jr.
The Characterization of Various ZnO Nanostructures Using Field ...
Various morphologies and sizes of ZnO materials have led to a wide range of promising applications. Although research related to the applications of ZnO is�...
Synthesis, characterization, and applications of ZnO nanowires
ZnO nanowires (or nanorods) have been widely studied due to their unique material properties and remarkable performance in electronics, optics, and photonics. Recently, photocatalytic applications of ZnO nanowires are of increased interest in environmental ...
Yangyang Zhang; Manoj K. Ram; Elias K. Stefanakos; D. Yogi Goswami
AOCS Official Method Cd 27-96
Steroidal Hydrocarbons in Vegetable Oils AOCS Official Method Cd 27-96 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads DEFINITION This method should be used for the determi
AOCS Official Method Cd 3d-63
Acid Value AOCS Official Method Cd 3d-63 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads DEFINITION The acid value is the number of milligrams of potassium hydroxide necess
AOCS Official Method Cd 3e-02
Determination of Alkalinity in Fats and Oils AOCS Official Method Cd 3e-02 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads DEFINITION This method determines the alkalinity
AOCS Official Method Cd 1c-85
Calculated Iodine Value AOCS Official Method Cd 1c-85 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads DEFINITION This method determines the iodine value for edible oils dir
AOCS Official Method Cd 3b-76
Saponification Value AOCS Official Method Cd 3b-76 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads DEFINITION The saponification value is the amount of alkali necessary to
AOCS Official Method Cd 13-60
Hydroxyl Value AOCS Official Method Cd 13-60 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads DEFINITION The hydroxyl value is defined as the number of milligrams of potassi
AOCS Official Method Cd 23-93
Separation and Analysis of Organophosphorus and Organochlorine Pesticide Residues from Edible Oils Using Multiple Solid Phase Extraction Cartridges AOCS Official Method Cd 23-93 Methods Methods and Analyses Analytical Chemistry Methods Downloads Metho
AOCS Official Method Cd 20-91
Determination of Polar Compounds in Frying Fats AOCS Official Method Cd 20-91 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads DEFINITION Polar compounds are those compounds
AOCS Official Method Cd 16-81
Solid Fat Content (SFC) by Low-Resolution Nuclear Magnetic Resonance�The Indirect Method AOCS Official Method Cd 16-81 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads DEFINITION ...
AOCS Official Method Cd 16b-93
Solid Fat Content (SFC) by Low-Resolution Nuclear Magnetic Resonance�The Direct Method AOCS Official Method Cd 16b-93 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads AOCS ...
AOCS Official Method Cd 3-25
Saponification Value AOCS Official Method Cd 3-25 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads DEFINITION The saponification value is the amount of alkali necessary to s
AOCS Official Method Cd 3a-94
Calculated Saponification Value AOCS Official Method Cd 3a-94 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads DEFINITION The saponification value (SV) is the amount of alka
AOCS Official Method Cd 1b-87
Iodine Value of Fats and Oils Cyclohexane Method AOCS Official Method Cd 1b-87 Methods and Analyses acid agricultural analysis analytical analytical chemistry analytical methods aocs aocs methods april articles biotechnology certified chemists chloroprop
AOCS Official Method Cd 3c-91
Saponification Value Modified Method Using Methanol AOCS Official Method Cd 3c-91 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads DEFINITION The saponification value is the
AOCS Official Method Cd 11c-93
Quantitative Separation of Monoglycerides, Diglycerides, and Triglycerides by Silica Gel Column Chromatography AOCS Official Method Cd 11c-93 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads ...
AOCS Official Method Cd 11b-91
Determination of Mono- and Diglycerides by Capillary Gas Chromatography AOCS Official Method Cd 11b-91 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads DEFINITION This metho
AOCS Official Method Cd 9-57
Oxirane Oxygen AOCS Official Method Cd 9-57 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads DEFINITION This method determines oxirane oxygen which is the oxygen contained i
AOCS Official Method Cd 24-95
Determination of Dimethylpolysiloxanes in Fats and Oils AOCS Official Method Cd 24-95 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads DEFINITION A direct aspiration, flame
AOCS Official Method Cd 1e-01
Determination of Iodine Value by Pre-calibrated FT-NIR with Disposable Vials AOCS Official Method Cd 1e-01 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads DEFINITION The me
AOCS Official Method Cd 19-90
2-Thiobarbituric Acid Value Direct Method AOCS Official Method Cd 19-90 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads DEFINITION The TBA value is defined as the increase
AOCS Official Method Cd 18-90
p�Anisidine Value AOCS Official Method Cd 18-90 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads DEFINITION The p�anisidine value is defined by convention as 100 times
AOCS Official Method Cd 1d-92
Iodine Value of Fats and Oils Cyclohexane-Acetic Acid Method AOCS Official Method Cd 1d-92 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads DEFINITION The iodine value is a
Substrate CdTe Efficiency Improvements
Thin film solar cells have been the focus of many research facilities in recent years that are working to decrease manufacturing costs and increase cell efficiency. Cadmium telluride (CdTe) has been well recognized as a promising photovoltaic material ...
AOCS Official Method Cd 14d-99
Rapid Determination of Isolated trans Geometric Isomers in Fats and Oils by Attenuated Total Reflection Infrared Spectroscopy AOCS Official Method Cd 14d-99 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads AOCS
AOCS Official Method Cd 26-96
Stigmastadienes in Vegetable Oils AOCS Official Method Cd 26-96 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads DEFINITION This is a rigorous method for the determination o
AOCS Official Method Cd 25-96
Heat Transfer Fluids in Oils � Dowtherm TM by GC AOCS Official Method Cd 25-96 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads DEFINITION This method determines t
AOCS Official Method Cd 25a-00
Thermal Heating Fluids in Edible Oils and Oleochemicals�Dowtherm A TM by HPLC Coupled with Fluorescence Detector AOCS Official Method Cd 25a-00 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads ...
AOCS Official Method Cd 25b-07
Thermal Heating Fluids in Vegetable Oils AOCS Official Method Cd 25b-07 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads DEFINITION This method quantitatively determines the
AOCS Official Method Cd 11d-96
Mono- and Diglycerides Determination by HPLC-ELSD AOCS Official Method Cd 11d-96 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads DEFINITION This standard describes a method
Gamma-ray cascade transitions from resonant neutron capture in Cd-111 and Cd-113
A neutron-capture experiment on {sup nat}Cd has been carried out at DANCE. Multiple-fold coincidence {gamma}-ray spectra have been collected from J=0, 1 resonances in {sup 111}Cd and {sup 113}Cd. The cascades ending at the ground state can be described by the SLO model while the cascades ending at the 2+ states are better reproduced by the mixed SLO+KMF model.
Rusev, Gencho Y. [Los Alamos National Laboratory
Optical properties of ZnO-alloyed nanocrystalline films
ZnO is emerging as one of the materials of choice for UV applications. It has a deep excitonic energy level and a direct bandgap of ?3.4 eV. Alloying ZnO with certain atomic constituents adds new optical and electronic functionalities to ZnO. This ...
Hui Che; Jesse Huso; John L. Morrison; Dinesh Thapa; Michelle Huso; Wei Jiang Yeh; M. C. Tarun; M. D. McCluskey; Leah Bergman
Data:8fedf6a3-77ff-4cd4-9e32-a425b40eb8ed | Open Energy Information
fedf6a3-77ff-4cd4-9e32-a425b40eb8ed fedf6a3-77ff-4cd4-9e32-a425b40eb8ed No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: City of Eagle River, Wisconsin (Utility Company) Effective date: 2009/08/04 End date if known: Rate name: Rg-2 Residential Service Single Phase - Optional Time-of-Day 7am-7pm with Parallel Generation(20kW or less)-Net Energy Billing Sector: Residential Description: Power Cost Adjustment Clause - All metered rates shall be subject to a positive or negative power cost adjustment charge equivalent to the amount by which the current cost of power (per kilowatt-hour of sales) is greater or lesser than the base cost of power purchased (per kilowatt-hour of sales). The base
Data:6fc96800-2671-4a9d-9aa6-9cb771f9d8cd | Open Energy Information
6800-2671-4a9d-9aa6-9cb771f9d8cd 6800-2671-4a9d-9aa6-9cb771f9d8cd No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: City of Cuba City, Wisconsin (Utility Company) Effective date: 2009/10/14 End date if known: Rate name: Rg-1 Residential Service Three Phase Sector: Residential Description: Power Cost Adjustment Clause - All metered rates shall be subject to a positive or negative power cost adjustment charge equivalent to the amount by which the current cost of power (per kilowatt-hour of sales) is greater or lesser than the base cost of power purchased (per kilowatt-hour of sales). The base cost of power (U) is $0.0765 per kilowatt-hour.
Data:2dd43dd6-5384-407a-ad9b-8217a2243cd5 | Open Energy Information
3dd6-5384-407a-ad9b-8217a2243cd5 3dd6-5384-407a-ad9b-8217a2243cd5 No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: Village of Sauk City, Wisconsin (Utility Company) Effective date: 2008/08/18 End date if known: Rate name: Rg-2 Residential Service Optional Time-of-Day Three Phase Sector: Residential Description: Power Cost Adjustment Clause - All metered rates shall be subject to a positive or negative power cost adjustment charge equivalent to the amount by which the current cost of power (per kilowatt-hour of sales) is greater or lesser than the base cost of power purchased (per kilowatt-hour of sales). The base cost of power (U) is $0.0756 per kilowatt-hour.
Data:E0909497-c3f7-4ab4-b60a-27018cf4f5cd | Open Energy Information
09497-c3f7-4ab4-b60a-27018cf4f5cd 09497-c3f7-4ab4-b60a-27018cf4f5cd No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: City of Princeton, Wisconsin (Utility Company) Effective date: 2006/09/14 End date if known: Rate name: Rg-2 Residential Service Optional Time-of-Day Single Phase 7am-7pm with Parallel Generation(20kW or less) Sector: Residential Description: Power Cost Adjustment Clause - All metered rates shall be subject to a positive or negative power cost adjustment charge equivalent to the amount by which the current cost of power (per kilowatt-hour of sales) is greater or lesser than the base cost of power purchased (per kilowatt-hour of sales). The base cost of power (U) is $0.0524 per kilowatt-hour.
Data:80a5bf7d-cd68-4bcb-a67f-9d78565135aa | Open Energy Information
bf7d-cd68-4bcb-a67f-9d78565135aa bf7d-cd68-4bcb-a67f-9d78565135aa No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: Village of Sauk City, Wisconsin (Utility Company) Effective date: 2008/08/18 End date if known: Rate name: Rg-2 Residential Service Optional Time-of-Day Single Phase Sector: Residential Description: Power Cost Adjustment Clause - All metered rates shall be subject to a positive or negative power cost adjustment charge equivalent to the amount by which the current cost of power (per kilowatt-hour of sales) is greater or lesser than the base cost of power purchased (per kilowatt-hour of sales). The base cost of power (U) is $0.0756 per kilowatt-hour.
Data:A5b300cd-4537-40ba-949f-9cff3a613b55 | Open Energy Information
0cd-4537-40ba-949f-9cff3a613b55 0cd-4537-40ba-949f-9cff3a613b55 No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: Hustisford Utilities Effective date: 2008/09/30 End date if known: Rate name: Rg-2 Residential Service Optional Time-of-Day Three Phase 9am-9pm with Parallel Generation(20kW or less) Sector: Residential Description: Power Cost Adjustment Clause - All metered rates shall be subject to a positive or negative power cost adjustment charge equivalent to the amount by which the current cost of power (per kilowatt-hour of sales) is greater or lesser than the base cost of power purchased (per kilowatt-hour of sales). The base cost of power (U) is $0.0720 per kilowatt-hour.
Data:5c246a28-db7e-42a7-b80a-71b8065cd85f | Open Energy Information
a28-db7e-42a7-b80a-71b8065cd85f a28-db7e-42a7-b80a-71b8065cd85f No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: City of Princeton, Wisconsin (Utility Company) Effective date: 2006/09/14 End date if known: Rate name: Rg-2 Residential Service Optional Time-of-Day Three Phase 9am-9pm Sector: Residential Description: Power Cost Adjustment Clause - All metered rates shall be subject to a positive or negative power cost adjustment charge equivalent to the amount by which the current cost of power (per kilowatt-hour of sales) is greater or lesser than the base cost of power purchased (per kilowatt-hour of sales). The base cost of power (U) is $0.0524 per kilowatt-hour.
Data:7401a547-cd76-4d46-8042-6c1e4e17aa10 | Open Energy Information
cd76-4d46-8042-6c1e4e17aa10 cd76-4d46-8042-6c1e4e17aa10 No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: City of Princeton, Wisconsin (Utility Company) Effective date: 2006/09/14 End date if known: Rate name: Rg-2 Residential Service Optional Time-of-Day Three Phase 7am-7pm Sector: Residential Description: Power Cost Adjustment Clause - All metered rates shall be subject to a positive or negative power cost adjustment charge equivalent to the amount by which the current cost of power (per kilowatt-hour of sales) is greater or lesser than the base cost of power purchased (per kilowatt-hour of sales). The base cost of power (U) is $0.0524 per kilowatt-hour.
Data:Eadb7c29-8519-4665-b35c-43cd8a27ae3b | Open Energy Information
Eadb7c29-8519-4665-b35c-43cd8a27ae3b Eadb7c29-8519-4665-b35c-43cd8a27ae3b No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: City of New Lisbon, Wisconsin (Utility Company) Effective date: 2008/05/12 End date if known: Rate name: Rg-1 Residential Service Three Phase Sector: Residential Description: Power Cost Adjustment Clause - All metered rates shall be subject to a positive or negative power cost adjustment charge equivalent to the amount by which the current cost of power (per kilowatt-hour of sales) is greater or lesser than the base cost of power purchased (per kilowatt-hour of sales). The base cost of power (U) is $0.0523 per kilowatt-hour.
Data:4ee3cd08-a1ca-4c12-aad0-f84efa3f97d4 | Open Energy Information
cd08-a1ca-4c12-aad0-f84efa3f97d4 cd08-a1ca-4c12-aad0-f84efa3f97d4 No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: Oconto Falls Water & Light Comm Effective date: 2010/10/13 End date if known: Rate name: Rg-2 Residential Service Optional Time-of-Day Single Phase 9am-9pm with Parallel Generation(20kW or less) Sector: Residential Description: Power Cost Adjustment Clause - All metered rates shall be subject to a positive or negative power cost adjustment charge equivalent to the amount by which the current cost of power (per kilowatt-hour of sales) is greater or lesser than the base cost of power purchased (per kilowatt-hour of sales). The base cost of power (U) is $0.0847 per kilowatt-hour.
Data:A7b18ca0-6fd4-48cd-b2c4-b867bd478abf | Open Energy Information
ca0-6fd4-48cd-b2c4-b867bd478abf ca0-6fd4-48cd-b2c4-b867bd478abf No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: Village of Cashton, Wisconsin (Utility Company) Effective date: 2009/02/15 End date if known: Rate name: Rg-1 Residential Service Three Phase Sector: Residential Description: Application: This rate will be applied to residential single-phase and three-phase customers for ordinary household purposes. Single-phase motors may not exceed 5 horsepower individual-rated capacity without utility permission. Fixed Monthly Charge includes Commitment to Community Rider: $1.33 per customer per month. Power Cost Adjustment Clause: Charge per all kWh varies monthly.
PU/ZnO composites for biomedical applications; Comp�sitos PU/ZnO para aplica��es biom�dicas.
??The present work is focused on the preparation and characterization of biomedical devices able to elicit different biological responses. Polyurethane/zinc oxide composites (PU/ZnO) appear as� (more)
Lu�s, Jorge Louro
Fabrication of stable, large-area, thin-film CdTe photovoltaic modules
Solar Cells, Inc (SCI) has a program to produce 60 cm X 120 cm solar modules based on CdTe films. The method of choice for semiconductor deposition is condensation from high temperature vapor's. Early work focussed on Close Spaced Sublimation and Chemical Vapor Deposition using elemental sources, but later equipment designs no longer strictly conform to either category. Small area efficiency has been confirmed by NREL at 9.3% on a 0.22 cm{sup 2} device (825 mV Voc, 18.2 mA/cm{sup 2} Jsc, and 0.62 FF) deposited on a 100 cm{sup 2} substrate. On 8 cell, 64 cm{sup 2} submodules, the best result to date is 7.3% (5.9 V Voc, 130 mA Isc, and 0.61 FF). CdS, CdTe, and ZnTe films have been deposited onto 60 cm X 120 cm substrates - single cells produced from this material have exceeded 8% efficiency, 64 cm{sup 2} submodules have exceeded 5%. Module efficiency is limited by mechanical defects - mostly shunts - associated with processing after deposition of the semiconductor layer's. Present best result is 1.4% total area efficiency. In anticipation of more advanced designs, CdTe films have also been deposited from apparatus employing elemental sources. This project is in an early stage and has produced only rudimentary results. A pro-active Safety, Health, Environmental and Disposal program has been developed. Results to date indicate that both employees and the environment have been protected against overexposure to hazards including toxic chemicals.
Nolan, J.F.; Meyers, P.V. (Solar Cells, Inc., Toledo, OH (United States))
Structural properties of Zn-ZnO core-shell microspheres grown by hot-filament CVD technique
We report the hot-filament chemical vapor deposition (HFCVD) growth of Zn-ZnO core-shell microspheres in the temperature range of 350-650�C only using ZnO pellets as raw material. The samples were characterized by scanning electron microscope (SEM), ...
R. L�pez; T. D�az; G. Garc�a; R. Galeazzi; E. Rosendo; A. Coyopol; M. Pacio; H. Ju�rez; A. I. Oliva
Interaction of CO with Surface PdZn Alloys
The adsorption and bonding configuration of CO on clean and Zn-covered Pd(111) surfaces was studied using Low Energy Electron Diffraction (LEED), Temperature Programmed Desorption (TPD) and High Resolution Electron Energy Loss Spectroscopy (HREELS). LEED and TPD results indicate that annealing at 520 K is sufficient to induce reaction between adsorbed Zn atoms and the Pd(111) surface resulting in the formation of an ordered surface PdZn alloy. Carbon monoxide was found to bond more weakly to the Zn/Pd(111) alloy surfaces compared to clean Pd(111). Zn addition was also found to alter the preferred adsorption sites for CO from threefold hollow to atop sites. Similar behavior was observed for supported Pd-Zn/Al2O3 catalysts. The results of this study show that both ensemble and electronic effects play a role in how Zn alters the interactions of CO with the surface.
Jeroro, E.; Lebarbier, Vanessa MC; Datye, Abhaya; Wang, Yong; Vohs, John M.
High-Efficiency Polycrystalline CdTe Thin-Film Solar Cells with an Oxygenated Amorphous CdS (a-CdS:O) Window Layer: Preprint
In the conventional CdS/CdTe device structure, the poly-CdS window layer has a bandgap of {approx}2.4 eV, which causes absorption in the short-wavelength region. Higher short-circuit current densities (Jsc) can be achieved by reducing the CdS thickness, but this can adversely impact device open-circuit voltage (Voc) and fill factor (FF). Also, poly-CdS film has about 10% lattice mismatch related to the CdTe film, which limits the improvement of device Voc and FF. In this paper, we report a novel window material: oxygenated amorphous CdS film (a-CdS:O) prepared at room temperature by rf sputtering. The a-CdS:O film has a higher optical bandgap (2.5-3.1 eV) than the poly-CdS film and an amorphous structure. The preliminary device results have demonstrated that Jsc of the CdTe device can be greatly improved while maintaining higher Voc and FF. We have fabricated a CdTe cell demonstrating an NREL-confirmed Jsc of 25.85 mA/cm2 and a total-area efficiency of 15.4%.
Wu, X.; Dhere, R. G.; Yan, Y.; Romero, M. J.; Zhang, Y.; Zhou, J.; DeHart, C.; Duda, A.; Perkins, C.; To, B.
Kinetics of Cd Release from Some Contaminated Calcareous Soils
Contamination of soils with heavy metals may pose long-term risk to groundwater quality leading to health implications. Bioavailability of heavy metals, like cadmium (Cd) is strongly affected by sorption and desorption processes. The release of heavy metals from contaminated soils is a major contamination risks to natural waters. The release of Cd from contaminated soils is strongly influenced by its mobility and bioavailability. In this study, the kinetics of Cd desorption from ten samples of contaminated calcareous soils, with widely varying physicochemical properties, were studied using 0.01 M EDTA extraction. The median percentage of Cd released was about 27.7% of the total extractable Cd in the soils. The release of Cd was characterized by an initial fast release rate (of labile fractions) followed by a slower release rate (of less labile fractions) and a model of two first-order reactions adequately describes the observed release of Cd from the studied soil samples. There was positive correlation between the amount of Cd released at first phase of release and Cd in exchangeable fraction, indicating that this fraction of Cd is the main fraction controlling the Cd in the kinetic experiments. There was strongly negative correlation between the amount of Cd released at first and second phases of release and residual fraction, suggesting that this fraction did not contribute in Cd release in the kinetic experiments. The results can be used to provide information for evaluation of Cd potential toxicity and ecological risk from contaminated calcareous soils.
Sajadi Tabar, S.; Jalali, M., E-mail: firstname.lastname@example.com [Bu-Ali Sina University, Department of Soil Science, College of Agriculture (Iran, Islamic Republic of)
Impact of air-exposure on the chemical and electronic structure ofZnO:Zn3N2 thin films
The chemical and electronic surface structure of ZnO:Zn3N2 ("ZnO:N") thin films with different N contents was investigated by soft x-ray emission spectroscopy. Upon exposure to ambient air (in contrast to storage in vacuum), the chemical and electronic surface structure of the ZnO:N films changes substantially. In particular, we find that the Zn3N2/(Zn3N2+ZnO) ratio decreases with exposure time and that this change depends on the initial N content. We suggest a degradation mechanism based on the reaction of the Zn3N2 content with atmospheric humidity.
Bar, M.; Ahn, K.-S.; Shet, S.; Yan, Y.; Weinhardt, L.; Fuchs, O.; Blum, M.; Pookpanratana, S.; George, K.; Yang, W.; Denlinger, J.D.; Al-Jassim, M.; Heske, C.
The Effect of High-Resistance SnO2 on CdS/CdTe Device Performance
In this paper, we have studied the effect of high-resistance SnO2 buffer layers, deposited by low-pressure chemical-vapor deposition, on CdS/CdTe device performance. Our results indicate that when CdS/CdTe devices have a very thin layer of CdS or no CdS at all, the i-SnO2 buffer layer helps to increase device efficiency. When the CdS layer is thicker than 600{angstrom}, the device performance is dominated by CdS thickness, not the i-SnO2 layer. If a very thin CdS layer is to be used to enhance device performance, we conclude that a better SnO2 buffer layer is needed.
Li, W.; Ribelin, R.; Mahathongdy, Y.; Albin, D.; Dhere, R.; Rose, D.; Asher, S.; Moutinho, H.; Sheldon, P.
High-Temperature Microfluidic Synthesis of CdSe Nanocrystals in Nanoliter Droplets
Microfluidic Synthesis of CdSe Nanocrystals in Nanolitertemperature synthesis of CdSe nanocrystals in nanoliter-produced high quality CdSe nanocrystals, as verified by
Chan, Emory M.; Alivisatos, A. Paul; Mathies, Richard A.
Mechanical and electronic-structure properties of compressed CdSe tetrapod nanocrystals
properties of compressed CdSe tetrapod nanocrystals Joshuamechanical properties of CdSe tetrapods under directionalstructural transformations in CdSe nanocrystals, it has only
Schrier, Joshua; Lee, Byounghak; Wang, Lin-Wang
AOCS Official Method Cd 29b-13
Determination of Bound Monochloropropanediol- (MCPD-) and Bound 2,3-epoxy-1-propanol (glycidol-) by Gas Chromatography/Mass Spectrometry (GC/MS) AOCS Official Method Cd 29b-13 3-MCPD 2-diol 3-MCPD 3-MCPD Esters 3-monochloropropane-1 acid analysis aocs ap
AOCS Official Method Cd 29a-13
2- and 3-MCPD Fatty Acid Esters and Glycidol Fatty Acid Esters in Edible Oils and Fats by Acid Transesterification AOCS Official Method Cd 29a-13 3-MCPD 2-diol 3-MCPD 3-MCPD Esters 3-monochloropropane-1 acid analysis aocs april articles certified chemist
AOCS Official Method Cd 12b-92
Oil Stability Index (OSI) AOCS Official Method Cd 12b-92 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads ED0369DCFDFB089B607C26F77D8D4F41 DEFINITION All oils and fats h
AOCS Official Method Cd 14e-09
Negative Second Derivative Infrared Spectroscopic Method for the Rapid (5 min) Determination of Total Isolated trans Fat AOCS Official Method Cd 14e-09 Methods Downloads Methods Downloads 9D9F287316971C6645EB3D115BD7B46A ...
I-III-VI.sub.2 based solar cell utilizing the structure CuInGaSe.sub.2 CdZnS/ZnO
A thin film I-III-VI.sub.2 based solar cell having a first layer of copper indium gallium selenide, a second layer of cadmium zinc sulfide, a double layer of zinc oxide, and a metallization structure comprised of a layer of nickel covered by a layer of aluminum. An optional antireflective coating may be placed on said metallization structure. The cadmium zinc sulfide layer is deposited by means of an aqueous solution growth deposition process and may actually consist of two layers: a low zinc content layer and a high zinc content layer. Photovoltaic efficiencies of 12.5% at Air Mass 1.5 illumination conditions and 10.4% under AMO illumination can be achieved.
Chen, Wen S. (Seattle, WA); Stewart, John M. (Seattle, WA)
ORNL DAAC, Southern African CD-ROM, July 8, 2003
CD-ROM for Southern Africa Goes Public The ORNL DAAC announces that the second CD-ROM volume prepared for the Southern African Regional Science Initiative ( 2000 is now...
BOREAS CD-ROMs and CASI Data Available
CD-ROMs and CASI Data The ORNL DAAC now offers a 12-volume CD-ROM set of compiled measurement data and selected image data from the Boreal Ecosystem-Atmosphere Study (BOREAS),...
BOREAS Follow-On CD-ROMs, Sepetember 2002
on CD-ROM The ORNL DAAC has released a 6-disk set of BOREAS Follow-On CD-ROMs. The set contains flux data for 1997 to 1999, GOES imagery, and other ancillary data recorded or...
Integrated Biorefinery Research Facility (IBRF I-II) (Post CD...
Integrated Biorefinery Research Facility (IBRF I-II) (Post CD-4), EERE, Aug 2011 Integrated Biorefinery Research Facility (IBRF I-II) (Post CD-4), EERE, Aug 2011 000521 & 000519...
CdTe PV: Real and Perceived EHS Risks
As CdTe photovoltaics reached commercialization, questions have been raised about potential cadmium emissions from CdTe PV modules. Some have attacked the CdTe PV technology as unavoidably polluting the environment, and made comparisons of hypothetical emissions from PV modules to cadmium emissions from coal fired power plants. This paper gives an overview of the technical issues pertinent to these questions and further explores the potential of EHS risks during production, use and decommissioning of CdTe PV modules. The following issues are discussed: (a) The physical and toxicological properties of CdTe, (b) comparisons of Cd use in CdTe PV with its use in other technologies and products, and the (c) the possibility of CdTe releases from PV modules.
Fthenakis, V.; Zweibel, K.
Wind Energy Resource Atlas of Armenia (CD-ROM)
Resource Atlas of Armenia (CD-ROM) http:www.nrel.govdocsfy03osti33877CD.zip (ZIP 31.9 MB) NRELCD-500-33877 July 2003 Instructions: The URL above links to a zipped archive...
Photoluminescence studies of type-II CdSe/CdTe superlattices
CdSe/CdTe type-II superlattices grown on GaSb substrates by molecular beam epitaxy are studied using time-resolved and steady-state photoluminescence (PL) spectroscopy at 10 K. The relatively long carrier lifetime of 188 ns observed in time-resolved PL measurements shows good material quality. The steady-state PL peak position exhibits a blue shift with increasing excess carrier concentration. Self-consistent solutions of the Schroedinger and Poisson equations show that this effect can be explained by band bending as a result of the spatial separation of electrons and holes, which is critical confirmation of a strong type-II band edge alignment between CdSe and CdTe.
Li Jingjing; Johnson, Shane R.; Wang Shumin; Ding Ding; Ning Cunzheng; Zhang Yonghang [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287-5706 (United States); School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287-5706 (United States); Yin Leijun [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287-5706 (United States); Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Skromme, B. J. [School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287-5706 (United States); Liu Xinyu; Furdyna, Jacek K. [Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 (United States)
PARS II Process Document � Project Phasing (Multiple CD-2 from Single CD-1)
Energy.gov (U.S. Department of Energy (DOE))
This document details the process by which projects that adopted Phasing approach (different phases of the same larger project are treated as separate sub-projects, resulting in multiple CD-2...
Data:5468608b-a91f-44cd-b0fd-ffcf4669e677 | Open Energy Information
8b-a91f-44cd-b0fd-ffcf4669e677 8b-a91f-44cd-b0fd-ffcf4669e677 No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: City of Black River Falls, Wisconsin (Utility Company) Effective date: 2010/04/15 End date if known: Rate name: Residential Service Optional Time-of-Day Single Phase 7am-7pm with Parallel Generation(20kW or less) Sector: Residential Description: Power Cost Adjustment Clause All metered rates shall be subject to a positive or negative power cost adjustment charge equivalent to the amount by which the current cost of power (per kilowatt-hour of sales) is greater or lesser than the base cost of power purchased (per kilowatt-hour of sales). The current cost per kilowatt-hour of energy billed is equal to the cost of power purchased for the most recent month, divided by the kilowatt-hours of energy sold. The monthly adjustment (rounded to the nearest one one-hundredth of a cent) is equal to the current cost less the base cost. The base cost of power (U) is $0.0790 per kilowatt-hour. Application: This rate schedule is optional to all Rg-1, Residential Service customers. Customers that wish to be served on this rate schedule must apply to the utility for service. Once an optional customer begins service on this rate schedule, the customer shall remain on the rate for a minimum of one year. Any customer choosing to be served on this rate schedule waives all rights to billing adjustments arising from a claim that the bill for service would be less on another rate schedule than under this rate schedule. Commitment to Community rider: Rg-2 Residential Service Optional TOD 3.0% of the total electric bill not to exceed $1.00
AMORPHOUS THIN FILMS CONSISTING OF TERNARY MgZnCa ...
Jul 20, 2012 ... AMORPHOUS THIN FILMS CONSISTING OF TERNARY MgZnCa-ALLOYS by K. Schl�ter, C. Zamponi, U. Sch�rmann, N. Hort, L. Kienle, K.U.�...
The University of California CD-ROM Information System
The University of California CD-ROM Information System replaces the equivalent of 260,000 books of published federal statistics with a CD-ROM-based online information system. The size of this database is currently 270 CD-ROMs (135GB). It contains 1990 ...
Deane Merrill; Nathan Parker; Fredric Gey; Chris Stuber
Deformation potentials of CdSe quantum dots
a v (in eV) of zinc-blende CdSe. SEPM PW PW+d a a LAPW Expt>4: The size dependence of � a of C B M state of CdSe QDs. vDeformation potentials of CdSe quantum dots Jingbo L i and L
Li, Jingbo; Wang, Lin-Wang
CdSe/CdTe type-II superlattices grown on GaSb (001) substrates by molecular beam epitaxy
CdSe/CdTe superlattices are grown on GaSb substrates using molecular beam epitaxy. X-ray diffraction measurements and cross-sectional transmission electron microscopy images indicate high crystalline quality. Photoluminescence (PL) measurements show the effective bandgap varies with the superlattice layer thicknesses and confirm the CdSe/CdTe heterostructure has a type-II band edge alignment. The valence band offset between unstrained CdTe and CdSe is determined as 0.63 {+-} 0.06 eV by fitting the measured PL peak positions using the envelope function approximation and the Kronig-Penney model. These results suggest that CdSe/CdTe superlattices are promising candidates for multi-junction solar cells and other optoelectronic devices based on GaSb substrates.
Li Jingjing; Liu Shi; Wang Shumin; Ding Ding; Johnson, Shane R.; Zhang Yonghang [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States); School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); Liu Xinyu; Furdyna, Jacek K. [Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Smith, David J. [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States); Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)
Nanocrystal Photovoltaics: The Case of Cu2S-CdS
C. B. ; Kornowski, A. ; F�rster, S. ; Weller, H. CdSeand CdSe/CdS Nanorod Solids. J. Am. Chem. Soc. 2004, 126,et al. Biaxially Oriented CdSe Nanorods. Langmuir 25, 10970-
Rivest, Jessica Louis Baker
ZnO and MgZnO nanocrystalline flexible films: optical and material properties
An emerging material for flexible UV applications is MgxZn1-xO which is capable of tunable bandgap and luminescence in the UV range of ?3.4 eV-7.4 eV depending on the composition x. Studies on the optical ...
Jesse Huso; John L. Morrison; Hui Che; Jency P. Sundararajan; Wei Jiang Yeh; David McIlroy; Thomas J. Williams; Leah Bergman
Global Soil Data on CD-ROM, Nov. 2000
Available on CD-ROM Available on CD-ROM The ORNL DAAC now offers a CD-ROM with global soil data prepared by the Global Soil Data Task for the International Geosphere-Biosphere Programme (IGBP) Data and Information Services (DIS). The CD is entitled "Global Soil Data Products CD-ROM (IGBP-DIS)." The new CD includes the IGBP's SoilData System, which links the Global Pedon Database to the FAO/UNESCO Digital Soil Map of the World. The system allows users to generate maps and data sets for a range of original and derived soil parameters for any part of the world at soil depths and resolutions selected by the user. The CD also contains 1125 soil profiles that provide information about fundamental soil properties (e.g., depth, particle size distribution, bulk density, extractable nutrient composition) for soil classes based on FAO
ZnS-Graphene nanocomposite: Synthesis, characterization and optical properties
A ZnS-Graphene nanocomposite was prepared by a facile one-step hydrothermal method using zinc nitrate hexahydrate, ethylenediamine and carbon disulfide as precursors, graphene oxide as a template. The composite was characterized by X-ray power diffraction, X-ray photoelectron spectroscopy, transmission electron microscopy, Fourier transform infrared, Raman spectra and fluorescence spectroscopy. The results show that graphene oxide was reduced to graphene in the hydrothermal reaction process. Simultaneously, the graphene sheets in the composite are exfoliated and decorated with ZnS nanoparticles. Furthermore, Raman and fluorescence properties of the composite were observed. ZnS-Graphene nanocomposite displays surface-enhanced Raman scattering activity for graphene oxide, and fluorescence enhancement property compared with pure ZnS sample. - Graphical abstract: Approach of reaction makes the reduction of grapheme oxide and the deposition of Zns on the grapheme sheets occur simultaneously and overcomes the aggregation of the grapheme sheets and Zns. Highlights: Black-Right-Pointing-Pointer Graphene oxide is reduced to graphene in the hydrothermal reaction process. Black-Right-Pointing-Pointer ZnS nanoparticles are attached onto the almost transparent graphene sheets. Black-Right-Pointing-Pointer ZnS-Graphene system shows surface-enhanced Raman scattering (SERS) activity. Black-Right-Pointing-Pointer ZnS-Graphene system displays relatively better fluorescence property than pure ZnS.
Pan Shugang [Key Laboratory for Soft Chemistry and Functional Materials, Nanjing University of Science and Technology, Ministry of Education, Nanjing 210094 (China); Liu Xiaoheng, E-mail: firstname.lastname@example.com [Key Laboratory for Soft Chemistry and Functional Materials, Nanjing University of Science and Technology, Ministry of Education, Nanjing 210094 (China)
Magnetic resonance studies on ZnO nanocrystals
ZnO nanocrystals with diameters ranging from 4 to 50 nm were prepared via a wet chemical method and post-growth annealing treatments. The electron paramagnetic resonance (EPR) spectra of the nanocrystals show the resonance of electron centers with g-value ... Keywords: K ? P theory, ZnO nanocrystal, electronic paramagnetic resonance (EPR), magnetic resonance
H. Zhou; A. Hofstaetter; D. M. Hofmann; B. K. Meyer
Investigation of Junction Properties in CdS/CdTe Solar Cells and Their Correlation to Device Properties: Preprint
Secondary-ion mass spectrometry analysis of the CdS/CdTe interface shows that S diffusion in CdTe increases with substrate temperature and CdCl2 heat treatment. There is also an accumulation of Cl at the interface for CdCl2-treated samples. Modulated photo-reflectance studies shows that devices with CdCl2 heat treatment and open-circuit voltage (Voc) of 835 mV have a distinct high electric-field region in the layer with bandgap of 1.45 eV. Electron-beam induced current measurements reveal a one-sided junction for high Voc devices. The nature of the junction changes with processing. For heterojunction devices, the depletion region includes the highly defective CdS/CdTe interface, which would increase the recombination current and consequently the dark current, leading to lower Voc. In the case of CdCl2-treated cells, the n+-p junction and its high electric-field results in the junction between structurally compatible CdTe and the Te-rich CdSTe alloy, and thus, in higher Voc.
SrZn{sub 2}Sn{sub 2} and Ca{sub 2}Zn{sub 3}Sn{sub 6} - two new Ae-Zn-Sn polar intermetallic compounds (Ae: alkaline earth metal)
SrZn{sub 2}Sn{sub 2} and Ca{sub 2}Zn{sub 3}Sn{sub 6}, two closely related new polar intermetallic compounds, were obtained by high temperature reactions of the elements. Their crystal structures were determined with single crystal XRD methods, and their electronic structures were analyzed by means of DFT calculations. The Zn-Sn structure part of SrZn{sub 2}Sn{sub 2} comprises (anti-)PbO-like {l_brace}ZnSn{sub 4/4}{r_brace} and {l_brace}SnZn{sub 4/4}{r_brace} layers. Ca{sub 2}Zn{sub 3}Sn{sub 6} shows similar {l_brace}ZnSn{sub 4/4}{r_brace} layers and {l_brace}Sn{sub 4}Zn{r_brace} slabs constructed of a covalently bonded Sn scaffold capped by Zn atoms. For both phases, the two types of layers are alternatingly stacked and interconnected via Zn-Sn bonds. SrZn{sub 2}Sn{sub 2} adopts the SrPd{sub 2}Bi{sub 2} structure type, and Ca{sub 2}Zn{sub 3}Sn{sub 6} is isotypic to the R{sub 2}Zn{sub 3}Ge{sub 6} compounds (R=La, Ce, Pr, Nd). Band structure calculations indicate that both SrZn{sub 2}Sn{sub 2} and Ca{sub 2}Zn{sub 3}Sn{sub 6} are metallic. Analyses of the chemical bonding with the electron localization function (ELF) show lone pair like basins at Sn atoms and Zn-Sn bonding interactions between the layers for both title phases, and covalent Sn-Sn bonding within the {l_brace}Sn{sub 4}Zn{r_brace} layers of Ca{sub 2}Zn{sub 3}Sn{sub 6}. - Graphical abstract: Crystal structures of the new Ae-Zn-Sn polar intermetallic phases SrZn{sub 2}Sn{sub 2} and Ca{sub 2}Zn{sub 3}Sn{sub 6}. Highlights: Black-Right-Pointing-Pointer New polar intermetallic phases SrZn{sub 2}Sn{sub 2} and Ca{sub 2}Zn{sub 3}Sn{sub 6}. Black-Right-Pointing-Pointer Obtained by high temperature reactions of the elements. Black-Right-Pointing-Pointer Single crystal XRD structure determination and DFT electronic structure calculations. Black-Right-Pointing-Pointer Closely related crystal and electronic structures. Black-Right-Pointing-Pointer Metallic conductivity coexisting with lone pairs and covalent bonding features.
Stegmaier, Saskia [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstrasse 4, 85747 Garching (Germany); Faessler, Thomas F., E-mail: firstname.lastname@example.com [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstrasse 4, 85747 Garching (Germany)
SIXTH QUARTERLY REPORT OF RESEARCH ON CuxS - (Cd,Zn)S PHOTOVOLTAIC SOLAR ENERGY CONVERTERS
for use in experimental photovoltaic cells. Hall mobilityvacuum method for photovoltaic cell fabrication" However,
Crystal Defects in CdZnTe Crystals Grown by the Modified Low-Pressure Bridgman Method
Cadmium Zinc Telluride (CZT) is among the most promising materials for room-temperature X- and gamma-ray detectors. However, crystal defects such as Te inclusions and subgrain boundaries significantly hamper their performances. In this work, we evaluated CZT crystals grown by the modified low-pressure Bridgman technique at the IMEM Institute, Parma. We characterized the crystals by IR microscopy to identify the sizes and concentrations of the Te inclusions, along with high spatial resolution X-ray response mapping to measure the uniformity of their charge-transport properties. In addition, we employed white X-ray beam diffraction topography to analyze their crystalline structure.
Bolotnikov A.; Marchini, L.; Zappettini, M.; Zha, M.; Zambelli, N.; Camarda, G.S.; James, R.B.
OPTIMIZATION OF VIRTUAL FRISCH-GRID CdZnTe DETECTOR DESIGNS FOR IMAGING AND SPECTROSCOPY OF GAMMA RAYS.
In the past, various virtual Frisch-grid designs have been proposed for cadmium zinc telluride (CZT) and other compound semiconductor detectors. These include three-terminal, semi-spherical, CAPture, Frisch-ring, capacitive Frisch-grid and pixel devices (along with their modifications). Among them, the Frisch-grid design employing a non-contacting ring extended over the entire side surfaces of parallelepiped-shaped CZT crystals is the most promising. The defect-free parallelepiped-shaped crystals with typical dimensions of 5x5{approx}12 mm3 are easy to produce and can be arranged into large arrays used for imaging and gamma-ray spectroscopy. In this paper, we report on further advances of the virtual Frisch-grid detector design for the parallelepiped-shaped CZT crystals. Both the experimental testing and modeling results are described.
Polaron effect-dependent third-order optical susceptibility in a ZnS/CdSe quantum dot quantum well
The effect of the electron-phonon interaction on the third-harmonic is investigated theoretically for electrons confined in a core-shell quantum dot. The interactions of electrons with different phonon modes in the core-shell system, including the confined ... Keywords: 42.65.An, 71.38.-k, 78.67.Hc, Core-shell quantum dot, Nonlinear optical susceptibility, Polarons
Zhihong Chen; Duanzheng Yao; Xi Zhang; Tianhong Fang
3D position sensitive CdZnTe gamma-ray spectrometers improved performance with new ASICs
Energy Sciences and the NNSA ASC program. We thank E. Chandler and C. Mailhiot for their encouragement
Role of Copper in the Performance of CdS/CdTe Solar Cells: Preprint
The performance of CdS/CdTe solar cells made with evaporated Cu as a primary back contact was studied through current-voltage (JV) at different intensities, quantum efficiency (QE) under light and voltage bias, capacitance-voltage (CV), and drive-level capacitance profiling (DLCP) measurements. The results show that while modest amounts of Cu enhance cell performance, excessive amounts degrade device quality and reduce performance. The analysis is supported with numerical simulations to reproduce and explain some of the experimental results.
Demtsu, S.; Albin, D.; Sites, J.
Role of Copper in the Performance of CdS/CdTe Solar Cells (Poster)
Development of CdS/CdTe Tin Film Devices for St. Gobain Coated Glass: Cooperative Research and Development Final Report, CRADA Number CRD-08-317
Research performed at NREL to produce CdS/CdTe devices on St. Gobain coated-glass material to establish a baseline CdS/CdTe device process and determine baseline device performance parameters on St. Gobain material. Performance of these baseline devices compared to similar devices produced by applying the established baseline CdS/CdTe process on alternative St. Gobain coated-glass materials.
Gessert, T.
Excitonic spectrum of the ZnO/ZnMgO quantum wells
Excitonic spectrum of the wurtzite ZnO/Zn{sub 1-x}Mg{sub x}O quantum wells with a width on the order of or larger than the Bohr radius of the exciton has been studied; the quantum wells have been grown by the method of molecular beam epitaxy (with plasma-assisted activation of oxygen) on substrates of sapphire (0001). Low-temperature (25 K) spectra of photoluminescence excitation (PLE) have been experimentally measured, making it possible to resolve the peaks of exciton absorption in the quantum well. The spectrum of excitons in the quantum well is theoretically determined as a result of numerical solution of the Schroedinger equation by the variational method. The value of elastic stresses in the structure (used in calculations) has been determined from theoretical simulation of measured spectra of optical reflection. A comparison of experimental data with the results of calculations makes it possible to relate the observed features in the PLE spectra to excitons, including the lower level of dimensional quantization for electrons and two first levels of holes for the A and B valence bands of the wurtzite crystal. The values of the electron and hole masses in ZnO are refined, and the value of the built-in electric field introduced by spontaneous and piezoelectric polarizations is estimated.
Bobrov, M. A., E-mail: firstname.lastname@example.com; Toropov, A. A.; Ivanov, S. V. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); El-Shaer, A.; Bakin, A.; Waag, A. [TU Braunschweig, Institute of Semiconductor Technology (Germany)
Spectroscopic Analysis of Impurity Precipitates in CdS Films
Impurities in cadmium sulfide (CdS) films are a concern in the fabrication of copper (indium, gallium) diselenide (CIGS) and cadmium telluride (CdTe) photovoltaic devices. Devices incorporating chemical-bath-deposited (CBD) CdS are comparable in quality to devices incorporating purer CdS films grown using vacuum deposition techniques, despite the higher impurity concentrations typically observed in the CBD CdS films. In this paper, we summarize and review the results of Fourier transform infrared (FTIR), Auger, electron microprobe, and X-ray photoelectron spectroscopic (XPS) analyses of the impurities in CBD CdS films. We show that these impurities differ as a function of substrate type and film deposition conditions. We also show that some of these impurities exist as 10{sup 2} micron-scale precipitates.
Webb, J. D.; Keane, J.; Ribelin, R.; Gedvilas, L.; Swartzlander, A.; Ramanathan, K.; Albin, D. S.; Noufi, R.
Effect of ultraviolet irradiation on luminescence properties of undoped ZnS and ZnS:Ag nanoparticles
Undoped ZnS and ZnS:Ag nanoparticles have been prepared through hydrothemal synthesis. The changes of luminescence properties induced by ultraviolet irradiation have been investigated. For both samples, the initial slight increase in luminescence is ascribed to the fast electron filling, while the succedent decrease is supposed to be caused by nonradiative pathways originating from some unknown photochemical products. The more remarkable decrease in ZnS:Ag is put down to the segregation of Ag on the surfaces of ZnS:Ag nanoparticles. Multipeaks Gaussian fitting is applied to the emission spectra. The fitting peaks around 490 nm in both samples are related with the surface states emission and the fitting peaks around 456 nm in ZnS nanoparticles and 443 nm in ZnS:Ag nanoparticles are attributed to the type of donor-acceptor pair luminescence, which corresponds to the transition between different donor levels and acceptor levels in different samples. A model of stretched exponential function is used to fit the fluorescence decay spectra. Result shows that the introduction of Ag{sup +} ions causes a spectacular lifetime shortening of ZnS. Experiment result also verifies the model as that the lifetimes of both samples are notably shortened after irradiation for 2 h.
Qu Hua; Cao Lixin; Su Ge; Liu Wei; Sun Yuanguang; Dong Bohua [Institute of Material Science and Engineering, Ocean University of China, Qingdao 266100 (China)
IAD News Archives - CD/DVD life expectancy
IAD in the News Archive - CD/DVD life expectancy. ... PCWorld.com, June 15, 2004. IAD work on optical disk life expectancy. GCN, Vol. 23, No. ...
Radionuclide Generator ^{111}In\\to^{111m}Cd
Radionuclide generator ^{111}In\\to^{111m}Cd with chemical yield > 95 % and contamination of the ^{111m}Cd by parent isotope (^{111}In) less than 0.6 % (of ^{111m}Cd activity) is developed. Extraction chromatography with di-2-ethylhexyl-phosphoric acid as an extragent is used for the radiochemical separation of the parent and the daughter radionuclides. Probability of the electron capture on the isomeric level 396 keV (^{111m}Cd) in the ^{111}In decay process is determinated to be (6.01\\pm 0.14_{stat}\\pm0.18_{syst})\\cdot10^{-5}.
Filossofov, D V; Lebedev, N A; Starodub, G Ya; Novgorodov, A F
Synthesis and characterization of ZnTe hierarchical nanostructures
Single-crystalline ZnTe hierarchical nanostructures have been successfully synthesized by a simple thermal evaporation technology. The as-prepared products were characterized with X-ray diffraction (XRD), scanning electron microcopy (SEM), transmission ...
Baohua Zhang; Fuqiang Guo; Wei Wang
ZnO-graphene Hybrid Quantum Dots Light Emitting Diode
Presentation Title, ZnO-graphene Hybrid Quantum Dots Light Emitting Diode. Author(s), Won Kook Choi, Dong-Ick Son, Soon-Nam Kwon. On-Site Speaker�...
Nanostructured ZnO arrays with self-ZnO layer created using simple electrostatic layer-by-layer assembly
Formation of unique ZnO nanoarrays utilizing photodynamic polymer, surface-relief grating structures, and unique electrostatic layer-by-layer assembly as a simple and economical methodology was demonstrated. Atomic force microscope (AFM), scanning electron ...
PilHo Huh; Seong-Cheol Kim
Properties of ZnO/Cu/ZnO multilayer films deposited by simultaneous RF and DC magnetron sputtering at different substrate temperatures
ZnO/Cu/ZnO transparent conductive multilayer films are prepared by simultaneous RF sputtering of ZnO and DC sputtering of Cu. The properties of the multilayer films are studied at different substrate temperatures. Sheet resistance of the multilayer film ... Keywords: Electrical and optical properties, Multilayer, Sputtering, TCO
D. R. Sahu; Jow-Lay Huang
Joint AOCS/JOCS Official Method Cd 28-10
Glycidyl Fatty Acid Esters in Edible Oils Joint AOCS/JOCS Official Method Cd 28-10 Methods Downloads DB289BBFE4CD82CBA0401C5CE0384944 6th Edition Recommended Practice Definition This method is used for the deter
The Transcription Factor PU.1 Regulates cd T Cell
Background: T cell development results in the generation of both mature ab and cd T cells. While ab T cells predominate in secondary lymphoid organs, cd T cells are more abundant in mucosal tissues. PU.1, an Ets family transcription factor, also identified as the spleen focus forming virus proviral integration site-1 (Sfpi1) is essential for early stages of T cell development, but is down regulated during the DN T-cell stage. Methodology/Principal Findings: In this study, we show that in mice specifically lacking PU.1 in T cells using an lck-Cre transgene with a conditional Sfpi1 allele (Sfpi1 lck2/2) there are increased numbers of cd T cells in spleen, thymus and in the intestine when compared to wild-type mice. The increase in cd T cell numbers in PU.1-deficient mice is consistent in cd T cell subsets identified by TCR variable regions. PU.1-deficient cd T cells demonstrate greater proliferation in vivo and in vitro. Conclusions/Significance: The increase of cd T cell numbers in Lck-Cre deleter strains, where deletion occurs after PU.1 expression is diminished, as well as the observation that PU.1-deficient cd T cells have greater proliferative responses than wild type cells, suggests that PU.1 effects are not developmental but rather at the level of homeostasis. Thus, our data
Rukhsana Jabeen; Hua-chen Chang; Ritobrata Goswami; Stephen L. Nutt; Mark H. Kaplan
Using shape to control photoluminescence from CdSe/CdS core/shell nanorods.
CdSe/CdS core/shell nanorods can exhibit high photoluminescence quantum yields, but it is not yet clear what processes determine the yields and how they can be controlled. Moreover, the effective band alignment between the core and the shell affects quantum yield, but its nature is still under debate. We systematically studied quantum yields when the shell is excited as a function of both core size and shell volume. Using time-resolved photoluminescence decay measurements and transient-absorption spectroscopy, we found that quantum yields are determined by a balance between radiative and nonradiative recombination rates, and not by single-carrier trapping. The radiative recombination rate decreases as the nanorod volume increases, independent of the core size. The results indicate that high quantum yields can be obtained only by limiting the size of the shell and point to an effective quasi-type-II band alignment for all of the nanorods in this study.
She, C.; Demortiere, A.; Shevchenko, E. V.; Pelton, M. (Center for Nanoscale Materials)
X-ray luminescence of CdTe quantum dots in LaF{sub 3}:Ce/CdTe nanocomposites
CdTe quantum dots have intense photoluminescence but exhibit almost no x-ray luminescence. However, intense x-ray luminescence from CdTe quantum dots is observed in LaF{sub 3}:Ce/CdTe nanocomposites. This enhancement in the x-ray luminescence of CdTe quantum dots is attributed to the energy transfer from LaF{sub 3}:Ce to CdTe quantum dots in the nanocomposites. The combination of LaF{sub 3}:Ce nanoparticles and CdTe quantum dots makes LaF{sub 3}:Ce/CdTe nanocomposites promising scintillators for radiation detection.
Hossu, Marius; Liu Zhongxin; Yao Mingzhen; Ma Lun; Chen Wei
Optical-Fiber-Based, Time-Resolved Photoluminescence Spectrometer for Thin-Film Absorber Characterization and Analysis of TRPL Data for CdS/CdTe Interface: Preprint
We describe the design of a time resolved photoluminescence (TRPL) spectrometer for rapid semiconductor absorber characterization. Simplicity and flexibility is achieved by using single optical fiber to deliver laser pulses and to collect photoluminescence. We apply TRPL for characterization of CdS/CdTe absorbers after deposition, CdCl2 treatment, Cu doping, and back contact formation. Data suggest this method could be applied in various stages of PV device processing. Finally, we show how to analyze TRPL data for CdS/CdTe absorbers by considering laser light absorption depth and intermixing at CdS/CdTe interface.
Kuciauskas, D.; Duenow, J. N.; Kanevce, A.; Li, J. V.; Young, M. R.; Dippo, P.; Levi, D. H.
Primary cutaneous CD30+ large-cell lymphoma presenting as a scrotal plaque
studies have shown that CD30 negative LCLs have a worseprognosis than CD30+ LCLs [ 4 , 8 ] and should be treatedfrom some primary cutaneous CD30+ LCLs, making the clinical
Modi, Sapna; Yang, Deborah J; Sule, Norman; Rosen, Ted
Photoacoustic study of CdS QDs for application in quantum-dot-sensitized solar cells
The optical properties and photovoltaic characterization of CdS quantum dots sensitized solar cells (QDSSCs) were studied. CdS QDs were prepared by the chemical solution deposition (CD) technique. Photoacoustic spectroscopy (PA) was employed to study ...
S. Abdallah, N. Al-Hosiny, Ali Badawi
Jump Frequency of Cd Tracer Atoms in -Mn Matthew O. Zacate and Gary S. Collinsa
to the second excited state of 111 Cd via electron capture. The Cd nucleus subsequently decays to its ground) is present at the Cd nucleus, the intermediate state is perturbed and populations of its magnetic substates
Collins, Gary S.
Shape dependence of band-edge exciton fine structure in CdSe nanocrystals
exciton fine structure in CdSe nanocrystals Qingzhong Zhao,fine structure of wurtzite CdSe nanocrystals is investigatedexciton fine structure of CdSe nanocrystals is determined by
Zhao, Qingzhong
Plasma properties of RF magnetron sputtering system using Zn target
In the present work, we investigate the fundamental properties of magnetron sputtering plasma using Zn target and its deposited Zn thin film. The magnetron sputtering plasma was produced using radio frequency (RF) power supply and Argon (Ar) as ambient gas. A Langmuir probe was used to collect the current from the plasma and from the current intensity, we calculate the electron density and electron temperature. The properties of Zn sputtering plasma at various discharge conditions were studied. At the RF power ranging from 20 to 100 W and gas pressure 5 mTorr, we found that the electron temperature was almost unchanged between 2-2.5 eV. On the other hand, the electron temperature increased drastically from 6 Multiplication-Sign 10{sup 9} to 1 Multiplication-Sign 10{sup 10}cm{sup -3} when the discharge gas pressure increased from 5 to 10 mTorr. The electron microscope images show that the grain size of Zn thin film increase when the discharge power is increased. This may be due to the enhancement of plasma density and sputtered Zn density.
Nafarizal, N.; Andreas Albert, A. R.; Sharifah Amirah, A. S.; Salwa, O.; Riyaz Ahmad, M. A. [Microelectronic and Nanotechnology - Shamsuddin Research Centre (MiNT-SRC), Faculty of Electrical and Electronic Engineering, Universiti Tun Hussein Onn Malaysia 86400 Parit Raja, Batu Pahat, Johor (Malaysia)
Donor behavior of Sb in ZnO
Electrical behavior of Sb in ZnO:Sb layers doped in a wide concentration range was studied using temperature dependent Hall effect measurements. The layers were grown by plasma-enhanced molecular beam epitaxy, and the Sb concentration was changed by varying the Sb flux, resulting in electron concentrations in the range of 10{sup 16} to nearly 10{sup 20} cm{sup -3}. Upon annealing, the electron concentration increased slightly and more notable was that the electron mobility significantly improved, reaching a room-temperature value of 110 cm{sup 2}/V s and a low-temperature value of 145 cm{sup 2}/V s, close to the maximum of {approx}155 cm{sup 2}/V s set by ionized impurity scattering. Hall data and structural data suggest that Sb predominantly occupies Zn sublattice positions and acts as a shallow donor in the whole concentration range studied. In the layers with high Sb content ({approx}1 at. %), acceptor-type compensating defects (possibly Sb on oxygen sites and/or point-defect complexes involving Sb{sub O}) are formed. The increase of electron concentration with increasing oxygen pressure and the increase in ZnO:Sb lattice parameter at high Sb concentrations suggest that acceptors involving Sb{sub O} rather than Sb{sub Zn}-2V{sub Zn} complexes are responsible for the compensation of the donors.
Liu, H. Y.; Izyumskaya, N.; Avrutin, V.; Oezguer, Ue.; Morkoc, H. [Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Yankovich, A. B.; Kvit, A. V.; Voyles, P. M. [Department of Materials Science and Engineering, University Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
Process Development for High Voc CdTe Solar Cells
This is a cumulative and final report for Phases I, II and III of this NREL funded project (subcontract # XXL-5-44205-10). The main research activities of this project focused on the open-circuit voltage of the CdTe thin film solar cells. Although, thin film CdTe continues to be one of the leading materials for large-scale cost-effective production of photovoltaics, the efficiency of the CdTe solar cells have been stagnant for the last few years. This report describes and summarizes the results for this 3-year research project.
Ferekides, C. S.; Morel, D. L.
Expanding the One-Dimensional CdS-CdSe Composition Landscape: Axially Anisotropic CdS{sub 1-x}Se{sub x} Nanorods
We report the synthesis and characterization of CdS{sub 1�x}Se{sub x} nanorods with axial anisotropy. These nanorods were synthesized via single injection of a mixture of trioctylphosphine sulfur and selenium precursors to a cadmium�phosphonate complex at high temperature. Transmission electron microscopy shows nanoparticle morphology changes with relative sulfur and selenium loading. When the synthetic selenium loading is between 5% and 10% of total chalcogenides, the nanorods exhibit pronounced axial anisotropy characterized by a thick �head� and a thin �tail�. The nanorods� band gap red shifts with increasing selenium loading. X-ray diffraction reveals that CdS{sub 1�x}Se{sub x} nanorods have a wurtzite crystal structure with a certain degree of alloying. High-resolution and energy-filtered transmission electron microscopy and energy-dispersive X-ray spectroscopy confirm the head of the anisotropic nanorods is rich in selenium, whereas the tail is rich in sulfur. Time evolution and mechanistic studies confirm the nanorods form by quick growth of the CdSe-rich head, followed by slow growth of the CdS-rich tail. Metal photodeposition reactions with 575 nm irradiation, which is mostly absorbed by the CdSe-rich segment, show effective electronic communication between the nanorod head and tail segments.
Ruberu, T. Purnima A.; Vela, Javier
Structural Studies of Al:ZnO Powders and Thin Films | Stanford...
Ingham, Associate Investigator, MacDiarmid Institute for Advanced Materials & Nanotechnology Al-doped ZnO (Al:ZnO) is a promising transparent conducting oxide. We have used...
An improved understanding of fluorescent Zn(II) sensors and their uses in biological settings
Chapter 1. An Introduction to Fluorescent Zn(II) Sensors and Their Applications in Biological Systems This chapter opens with an overview of the numerous roles of zinc in biology, with an emphasis on labile Zn(II), that ...
Wong, Brian Alexander
Microsoft Word - Zn-DTPA Insert_2 Pages.doc
zinc trisodium injection contains the sodium salt of zinc diethylenetriaminepentaacetate. Pentetate zinc zinc trisodium injection contains the sodium salt of zinc diethylenetriaminepentaacetate. Pentetate zinc trisodium is also known as trisodium zinc diethylenetriaminepentaacetate and is commonly referred to as Zn- DTPA. It has a molecular formula of Na3ZnC14H18N3O10 and a molecular weight of 522.7 Daltons. It is represented by the following structural formula: Zn-DTPA is supplied as a clear, colorless, hyperosmolar (1260 mOsmol/kg) solution in a colorless ampoule containing 5 mL. The ampoule contents are sterile, non-pyrogenic and suitable for intravenous administration. Each mL of solution contains the equivalent of 200 mg pentetate zinc trisodium (obtained from 150.51 mg pentetic acid, 31.14 mg zinc oxide and NaOH) and water for injection, USP. The pH of the solution is adjusted
Process for fabricating ZnO-based varistors
The invention is a process for producing ZnO-based varistors incorporating a metal oxide dopant. In one form, the invention comprises providing a varistor powder mix of colloidal particles of ZnO and metal-oxide dopants including Bi.sub.2 O.sub.3. The mix is hot-pressed to form a compact at temperatures below 850.degree. C. and under conditions effecting reduction of the ZnO to sub-stoichiometric oxide. This promotes densification while restricting liquid formation and grain growth. The compact then is heated under conditions restoring the zinc oxide to stoichiometric composition, thus improving the varistor properties of the compact. The process produces fine-grain varistors characterized by a high actual breakdown voltage and a high average breakdown voltage per individual grain boundary.
Lauf, Robert J. (Oak Ridge, TN)
AOCS Official Method Cd 1b-87 (Pending)
Iodine Value of Fats and Oils Cyclohexane Method AOCS Official Method Cd 1b-87 (Pending) Methods Downloads Methods Downloads Official Methods and Recommended Practices of the AOCS (Methods) aocs applicants certified chemist chemists fats lab lab
CD2Alloy: class diagrams analysis using alloy revisited
We present CD2Alloy, a novel, powerful translation of UML class diagrams (CDs) to Alloy. Unlike existing translations, which are based on a shallow embedding strategy, and are thus limited to checking consistency and generating conforming object models ...
Shahar Maoz; Jan Oliver Ringert; Bernhard Rumpe
High-efficiency large-area CdTe panels
The objective of this three year effort has been to develop an improved materials technology and fabrication process for limited volume production of 1 ft{sup 2} and 4 ft{sup 2} CdS/CdTe photovoltaic modules. The module stability objective by the end of this three year subcontract was to develop techniques to provide ten year life exploration with no greater than 10% degradation. In order to achieve these efficiency and stability objectives, the research program has been separated into tasks including: (1) analysis and characterization of CdS/CdTe Devices; (2) performance optimization on small cells; (3) encapsulation and stability testing; and (4) module efficiency optimization. 27 refs., 18 figs., 3 tabs.
Albright, S.P.; Chamberlin, R.R.; Jordan, J.F. (Photon Energy, Inc., El Paso, TX (USA))
CdTe portfolio offers commercial ready high efficiency solar ...
This characteristic is due partly to the single-phase nature of the absorber layer and the ease with which the CdTe source ... Wind Energy; Partners (27) Visual ...
Advances in CdTe R&D at NREL
This paper summarizes the following R&D accomplishments at National Renewable Energy Laboratory (NREL): (1) Developed several novel materials and world-record high-efficiency CdTe solar cell, (2) Developed "one heat-up step" manufacturing processes, and (3) Demonstrated 13.9% transparent CdTe cell and 15.3% CdTe/CIS polycrystalline tandem solar cell. Cadmium telluride has been well recognized as a promising photovoltaic material for thin-film solar cells because of its near-optimum bandgap of ~1.5 eV and its high absorption coefficient. Impressive results have been achieved in the past few years for polycrystalline CdTe thin-film solar cells at NREL. In this paper, we summarize some recent R&D activities at NREL.
Wu, X.; Zhou, J.; Keane, J. C.; Dhere, R. G.; Albin, D. S.; Gessert, T. A.; DeHart, C.; Duda, A.; Ward, J. J.; Yan, Y.; Teeter, G.; Levi, D. H.; Asher, S.; Perkins, C.; Moutinho, H. R.; To, B.
Strategies for recycling CdTe photovoltaic modules
Recycling end-of-life cadmium telluride (CdTe) photovoltaic (PV) modules may enhance the competitive advantage of CdTe PV in the marketplace, but the experiences of industries with comparable Environmental, Health and Safety (EH&S) challenges suggest that collection and recycling costs can impose significant economic burdens. Customer cooperation and pending changes to US Federal law may improve recycling economics.
Eberspacher, C.; Gay, C.F. [UNISUN, Newbury Park, CA. (United States); Moskowitz, P.D. [Brookhaven National Lab., Upton, NY (United States)
Studies on the properties of sputter-deposited Ag-doped ZnO films
Ag-doped ZnO films were prepared by simultaneous rf magnetron sputtering of ZnO and dc magnetron sputtering of Ag on glass substrate. The influences of dopant content and substrate temperature on the properties of the as-grown films were investigated. ... Keywords: Ag, Electrical and optical properties, Thin films, ZnO
D. R. Sahu
Enhancement of photoluminescence lifetime of ZnO nanorods making use of thiourea
We have investigated correlation of photoluminescence lifetime between zinc oxide (ZnO) nanorods and thiourea-doped ZnO nanorods (tu: CH4N2S). Aqueous solutions of ZnO nanorods were deposited on glass substrate by using pneumatic ...
Erdal S�nmez; Kadem Meral
Synthesis and characterization of blue emitting ZnSe quantum dots
In this work we show a new experimental methodology to obtain ZnSe nanocrystals in aqueous solution aiming their application as biophotonic probes. The nanocrystals were obtained using a simple procedure based on the arrested precipitation of ZnSe in ... Keywords: Blue emission, Colloidal synthesis, Water soluble quantum dots, ZnSe
J. J. Andrade; A. G. Brasil, Jr.; P. M. A. Farias; A. Fontes; B. S. Santos
Fabrication of stable, large-area, thin-film CdTe photovoltaic modules. Annual subcontract report, 10 May 1991--9 May 1992
Solar Cells, Inc (SCI) has a program to produce 60 cm X 120 cm solar modules based on CdTe films. The method of choice for semiconductor deposition is condensation from high temperature vapor`s. Early work focussed on Close Spaced Sublimation and Chemical Vapor Deposition using elemental sources, but later equipment designs no longer strictly conform to either category. Small area efficiency has been confirmed by NREL at 9.3% on a 0.22 cm{sup 2} device (825 mV Voc, 18.2 mA/cm{sup 2} Jsc, and 0.62 FF) deposited on a 100 cm{sup 2} substrate. On 8 cell, 64 cm{sup 2} submodules, the best result to date is 7.3% (5.9 V Voc, 130 mA Isc, and 0.61 FF). CdS, CdTe, and ZnTe films have been deposited onto 60 cm X 120 cm substrates - single cells produced from this material have exceeded 8% efficiency, 64 cm{sup 2} submodules have exceeded 5%. Module efficiency is limited by mechanical defects - mostly shunts - associated with processing after deposition of the semiconductor layer`s. Present best result is 1.4% total area efficiency. In anticipation of more advanced designs, CdTe films have also been deposited from apparatus employing elemental sources. This project is in an early stage and has produced only rudimentary results. A pro-active Safety, Health, Environmental and Disposal program has been developed. Results to date indicate that both employees and the environment have been protected against overexposure to hazards including toxic chemicals.
Nolan, J.F.; Meyers, P.V. [Solar Cells, Inc., Toledo, OH (United States)
G1, Temperature Dependent Measurements of ZnO TFTs
Conference Tools for 2010 Electronic Materials Conference ... Propose A Proceedings ... TFTs demonstrate that PEALD ZnO does not contain a large concentration of deep ... [2] T. Tiedje, et. al., Physical Review Letters, 46, 1425, 1981. ..... N5, Breakdown Statistics and Nanowire Device Integration of Self-
Design of Shallow p-type Dopants in ZnO (Presentation)
ZnO is a promising material for short wave-length opto-electronic devices such as UV lasers and LEDs due to its large exciton binding energy and low material cost. ZnO can be doped easily n-type, but the realization of stable p-type ZnO is rather difficult. Using first-principles band structure methods the authors address what causes the p-type doping difficulty in ZnO and how to overcome the p-type doping difficulty in ZnO.
Wei, S.H.; Li, J.; Yan. Y.
Structural Studies of Al:ZnO Powders and Thin Films | Stanford Synchrotron
Structural Studies of Al:ZnO Powders and Thin Films Structural Studies of Al:ZnO Powders and Thin Films Monday, June 18, 2012 - 2:00pm SSRL Main Conference Room 137-322 Dr. Bridget Ingham, Associate Investigator, MacDiarmid Institute for Advanced Materials & Nanotechnology Al-doped ZnO (Al:ZnO) is a promising transparent conducting oxide. We have used complementary synchrotron and laboratory techniques to study the incorporation of Al within the ZnO lattice, and measure its effect on the crystallinity of thin films prepared by sol-gel techniques, with an aim to understand how these properties affect the film conductivity. I will present recent results from Al:ZnO powders and thin films, prepared with varying Al concentrations and calcination temperatures. Solid state 27Al NMR and ex situ X-ray diffraction (XRD) were performed on Al:ZnO
Theoretical study of syngas hydrogenation to methanol on the polar Zn-terminated ZnO(0001) surface
Methanol synthesis from syngas (CO/CO2/H2) hydrogenation on the perfect Zn�terminated polar ZnO(0001) surface have been investigated using periodic density functional theory calculations. Our results show that direct CO2 hydrogenation to methanol on the perfect ZnO(0001) surface is unlikely because in the presence of surface atomic H and O the highly stable formate (HCOO) and carbonate (CO3) readily produced from CO2 with low barriers 0.11 and 0.09 eV will eventually accumulate and block the active sites of the ZnO(0001) surface. In contrast, methanol synthesis from CO hydrogenation is thermodynamically and kinetically feasible on the perfect ZnO(0001) surface. CO can be consecutively hydrogenated into formyl (HCO), formaldehyde (H2CO), methoxy (H3CO) intermediates, leading to the final formation of methanol (H3COH). The reaction route via hydroxymethyl (H2COH) intermediate, a previously proposed species on the defected O�terminated ZnO( ) surface, is kinetically inhibited on the perfect ZnO(0001) surface. The rate-determining step in the consecutive CO hydrogenation route is the hydrogenation of H3CO to H3COH. We also note that this last hydrogenation step is pronouncedly facilitated in the presence of water by lowering the activation barrier from 1.02 to 0.55 eV. This work was supported by the U.S. Department of Energy Office of Basic Energy Sciences, Division of Chemical Sciences, Biosciences and Geosciences, and performed at EMSL, a national scientific user facility sponsored by the Department of Energy�s Office of Biological and Environmental Research located at Pacific Northwest National Laboratory (PNNL). Computational resources were provided at EMSL and the National Energy Research Scientific Computing Center at Lawrence Berkeley National Laboratory. J. Li and Y.-F. Zhao were also financially supported by the National Natural Science Foundation of China (Nos. 20933003 and 91026003) and the National Basic Research Program of China (No. 2011CB932400). Y.-F. Zhao acknowledges the fellowship from PNNL.
Zhao, Ya-Fan; Rousseau, Roger J.; Li, Jun; Mei, Donghai
PROCESS DEVELOPMENT FOR ZnO-BASED DEVICES KELLY PUI SZE IP
.M. Kaiser, Synthesis (1972). [25] R.G. Harvey, Synthesis (1970). [26] R.A. Benkeser, J.A. Laugal, L.A. Rappa, US Patent 4 533 760, 1985. [27] R.A. Benkeser, J.A. Laugal, L.A. Rappa, US Patent 4 553 752, 1985.S. Suslick (Ed.), Ultrasound: its [1] R.A. Benkeser, J.A. Laugal, L.A. Rappa, Tetrahedron Lett. 25 Chemical
Pearton, Stephen J.
Local structures of polar wurtzites Zn1-xMgxO studied by raman and 67Zn/25Mg NMR spectroscopies and by total neutron scattering
Research in the area of polar semiconductor heterostructures has been growing rapidly, driven in large part by interest in two-dimensional electron gas (2DEG) systems. 2DEGs are known to form at heterojunction interfaces that bear polarization gradients. They can display extremely high electron mobilities, especially at low temperatures, owing to spatial confinement of carrier motions. Recent reports of 2DEG behaviors in Ga{sub 1-x}Al{sub x}N/GaN and Zn{sub 1-x}Mg{sub x}O/ZnO heterostructures have great significance for the development of quantum Hall devices and novel high-electron-mobility transistors (HEMTs). 2DEG structures are usually designed by interfacing a polar semiconductor with its less or more polar alloys in an epitaxial manner. Since the quality of the 2DEG depends critically on interface perfection, as well as the polarization gradient at the heterojunction, understanding compositional and structural details of the parent and alloy semiconductors is an important component in 2DEG design and fabrication. Zn{sub 1-x}Mg{sub x}O/ZnO is one of the most promising heterostructure types for studies of 2DEGs, due to the large polarization of ZnO, the relatively small lattice mismatch, and the large conduction band offsets in the Zn{sub 1-x}Mg{sub x}O/ZnO heterointerface. Although 2DEG formation in Zn{sub 1-x}Mg{sub x}O/ZnO heterostructures have been researched for some time, a clear understanding of the alloy structure of Zn{sub 1-x}Mg{sub x}O is currently lacking. Here, we conduct a detailed and more precise study of the local structure of Zn{sub 1-x}Mg{sub x}O alloys using Raman and solid-state nuclear magnetic resonance (NMR), in conjunction with neutron diffraction techniques.
Proffen, Thomas E [Los Alamos National Laboratory; Kim, Yiung- Il [UCSB; Cadars, Sylvian [UCSB; Shayib, Ramzy [UCSB; Feigerle, Charles S [UNIV OF TENNESSEE; Chmelka, Bradley F [UCSB; Seshadri, Ram [UCSB
NETL: Gasification - Request Gasification Systems Information on a CD
Gasification Systems Gasification Systems Request Gasification Systems Information on a CD Please fill in the form below to receive the CDs of your choice. * Denotes required field Requestor Contact Information Requested By (Agency/Company): First Name: * Last Name: * Address: * PO Box: City: * State: * Zip: * Country: Email: * Phone: CD Request Select CD(s):* Gasification Systems Project Portfolio Gasification Technologies Training Course Special Instructions: Submit Request Reset Contacts Program Contact: Jenny Tennant (304) 285-4830 email@example.com Close Contacts Disclaimer Disclaimer of Liability: This system is made available by an agency of the United States Government. Neither the United States Government, the Department of Energy, the National Energy Technology Laboratory, nor any of
C.D. Howe Institute | Department of Energy
C.D. Howe Institute C.D. Howe Institute C.D. Howe Institute October 21, 2008 - 4:14pm Addthis Remarks as Prepared for Acting Deputy Secretary Kupfer Thank you very much. It's a pleasure to be here. I want to congratulate the C. D. Howe Institute on its 50th anniversary-a half century of thoughtful public policy debates on the issues of greatest interest and concern to the Canadian people. In our increasingly interconnected world-the dialogue you foster also helps to inform the larger global debate on these issues. It is my hope that we are able to spark such a dialogue with our event here today, and I very much look forward to your thoughts and questions. As I look around this room, it is very clear that there is a lot of wisdom and experience here. I will start off with some comments on US energy policy.
High contrast, CdTe portal scanner for radiation therapy
This paper reports on one of the most promising new technologies for improving the qualify of radiation therapy, the use of real-time systems to produce portal images. In the authors' approach, they are constructing a linear array of 256 CdTe photovoltaic detectors attached to a very compact linear scanner, all of which will be mounted in a cassette shaped package to be located under the patient table. The high stopping power of the CdTe allows a high contrast image to be made using only a single Linac pulse per line, resulting in a high contrast image in under 5 seconds.
Entine, G.; Squillante, M.R.; Hahn, R.; Cirignano, L.J.; McGann, W. (Radiation Monitoring Devices, Inc., Watertown, MA (United States)); Biggs, P.J. (Massachusetts General Hospital, Boston, MA (United States))
Cluster Chemistry in Electron-Poor Ae-Pt-Cd Systems (Ae=Ca, Sr, Ba): (Sr,Ba)Pt2Cd4, Ca6Pt8Cd16, and Its Known Antitype Er6Pd16Sb8
Three new ternary polar intermetallic compounds, cubic Ca6Pt8Cd16, and tetragonal (Sr, Ba)Pt2Cd4 have been discovered during explorations of the Ae�Pt�Cd systems. Cubic Ca6Pt8Cd16 (Fm-3m, Z = 4, a = 13.513(1) �) contains a 3D array of separate Cd8 tetrahedral stars (TS) that are both face capped along the axes and diagonally bridged by Pt atoms to generate the 3D anionic network Cd8[Pt(1)]6/2[Pt(2)]4/8. The complementary cationic surface of the cell consists of a face-centered cube of Pt(3)@Ca6 octahedra. This structure is an ordered ternary variant of Sc11Ir4 (Sc6Ir8Sc16), a stuffed version of the close relative Na6Au7Cd16, and a network inverse of the recent Er6Sb8Pd16 (compare Ca6Pt8Cd16). The three groups of elements each occur in only one structural version. The new AePt2Cd4, Ae = Sr, Ba, are tetragonal (P42/mnm,Z = 2, a ? 8.30 �, c ? 4.47 �) and contain chains of edge-sharing Cd4 tetrahedra along c that are bridged by four-bonded Ba/Sr. LMTO-ASA and ICOHP calculation results and comparisons show that the major bonding (Hamilton) populations in Ca6Pt8Cd16 and Er6Sb8Pd16 come from polar Pt�Cd and Pd�Sb interactions, that Pt exhibits larger relativistic contributions than Pd, that characteristic size and orbital differences are most evident for Sb 5s, Pt8, and Pd16, and that some terms remain incomparable, Ca�Cd versus Er�Pd.
Samal, Saroj L. [Ames Laboratory; Gulo, Fakhili [Ames Laboratory; Corbett, John D. [Ames Laboratory
Electron-Impact Dissociation of CD3+ and CH3+ Ions Producing CD2+, CH+ and C+ Fragment Ions
Using a crossed electron-ion beams method, we measured absolute cross sections for electron-impact dissociation of the CD3+ molecular ions producing CD2+ fragment ions and CH3+ ions yielding CH+ and C+ fragment ions over a collision energy range from a few eV up to 100 eV. The total experimental uncertainties are about 12% at the maximum of the curves of cross sections (peak of the cross section, for the CH+ channel). The obtained results suggest important roles played by pre-dissociation of bound states in the production of both the CH+ and C+ fragment ions. Good agreement is found with other results reported for the CH+ fragment, but some differences are found for the CD2+ and C+.
Bahati Musafiri, Eric [ORNL; Fogle, Jr., Michael R [ORNL; Vane, C Randy [ORNL; Bannister, Mark E [ORNL; Thomas, R. D. [Stockholm University, Stockholm, Sweden; Zhaunerchyk, Vitali [Stockholm University, Stockholm, Sweden
We have demonstrated that seeded growth of nanocrystals offers a convenient way to design nanoheterostructures with complex shapes and morphologies by changing the crystalline structure of the seed. By using Use nanocrystals with wurtzite and zinc blende structure as seeds for growth of US nanorods, we synthesized CdSe/CdS heterostructure nanorods and nanotetrapods, respectively. Both of these structures showed excellent luminescentproperties, combining high photoluminescence efficiency (similar to 80 and similar to 50percent for nanorods and nanotetrapods, correspondingly), giant extinction coefficients (similar to 2 x 10(7) and similar to 1.5 x 10(8) M-1 cm (-1) at 350 nm for nanorods and nanotetrapods, correspondingly), and efficient energy transfer from the US arms into the emitting CdSe Core.
Talapin, Dmitri; Talapin, Dmitri V.; Nelson, James H.; Shevchenko, Elena V.; Aloni, Shaul; Sadtler, Bryce; Alivisatos, A. Paul
Luminescent and structural properties of ZnO-Ag films
ZnO-Ag thin films were prepared by a two-stage method on glass and sapphire substrates. Ag doping was carried out by a method of close space sublimation at atmospheric pressure. The film thickness is varied from 0.6 to 7 {mu}m. The structural and radiative properties were explored by X-ray diffraction technique, atomic force microscopy, photoluminescence and cathodoluminescence spectroscopy. The influence of the fabricating conditions on the properties of ZnO-Ag films is studied. It is found that the Ag doping modifies the crystalline structure of the films and promotes the oriented growth of monocrystalline blocks with the size of 500-2000 nm in the [0002] direction. Improvement of the crystalline quality correlates with the change of the radiative characteristics of the films. The origin of emission centers is discussed.
Khomchenko, V. S., E-mail: firstname.lastname@example.com; Kushnirenko, V. I., E-mail: firstname.lastname@example.com; Papusha, V. P.; Savin, A. K.; Lytvyn, O. S. [National Academy of Sciences of Ukraine, V.E. Lashkaryov Institute of Semiconductor Physics (Ukraine)
Higgs Boson in RG running Inflationary Cosmology
An intriguing hypothesis is that gravity may be non-perturbatively renormalizable via the notion of asymptotic safety. We show that the Higgs sector of the SM minimally coupled to asymptotically safe gravity can generate the observed near scale-invariant spectrum of the Cosmic Microwave Background through the curvaton mechanism. The resulting primordial power spectrum places an upper bound on the Higgs mass, which for finely tuned values of the curvaton parameters, is compatible with the recently released Large Hadron Collider data.
Yi-Fu Cai; Damien A. Easson
The photoluminescence of CdSe/CdS core/shell quantum dots, nanorods, and tetrapods is investigated as a function of applied hydrostatic and non-hydrostatic pressure. The optoelectronic properties of all three nanocrystal morphologies are affected by strain. Furthermore, it is demonstrated that the unique morphology of a tetrapod is highly sensitive to non-isotropic stress environments. Seeded tetrapods can thereby serve as an optical strain gauge, capable of measuring forces on the order of nanonewtons. We anticipate that a nanocrystal strain gauge with optical readout will be useful for applications ranging from sensitive optomechanical devices to investigations of biomechanical processes.
Choi, Charina L.; Koski, Kristie J.; Sivasankar, Sanjeevi; Alivisatos, A. Paul
Stability of atoms in the anionic domain (Z)
We study the stability and universal behaviour of the ionization energy of N-electron atoms with nuclear charge Z in the anionic domain (Z), considering the nuclear charge Z as an arbitrary (non-integral) parameter. HF and CISD ground state energy calculations were performed for systems with N and N-1 electrons to compute the ionization energies for nuclear charges ranging from the neutral atom region to the anionic instability threshold. As testing systems we choose inert gases (He-like, Ne-like and Ar-like isoelectronic sequences) and alkali metals (Li-like, Na-like, K-like sequences). From the results, it is apparent that, for inert gases case, the stability relation with N is completely inverted in the singly-charged anion region (Z=N-1) with respect to the neutral atom region (Z=N), i.e. larger systems are more stable than the smaller ones. We devised a semi-analytical model (inspired by the zero-range forces theory) which lead us to establish the ionization energy dependence on the nuclear charge n...
Gil, G
The International Station Meteorological Climate Summary CD-ROM
The International Station Meteorological Climate Summary (ISMCS)is a Compact Disc-Read Only Memory(CD-ROM)containing climatic records for 640 primary weather-observation sites and over 5800 secondary sites around the world. When used with a ...
Terry Jarrett
Analysis of Moisture and CO(2) Uptake in Anhydrous CdCl(2) Powders Used for Vapor CdCl(2) Treatment of CdS/CdTe PV Devices
Water and CO(2) uptake in CdCl(2) powder precursors was investigated using thermogravimetric analysis/Fourier transform infrared spectroscopy (TGA/FTIR). Exposure of powders under ambient conditions shows that a steady-state hydration level near 9% (by weight) is achieved after brief exposure to room air.
Mazur, T.; Gessert, T.; Martins, G.; Curtis, C.
Catalyst free growth of ZnO nanorods by thermal evaporation method
In this work, we report catalyst free growth of ZnO nanorods on n-Si substrate by a low cost thermal evaporation method. The surface morphology, chemical composition and crystalline structure of ZnO nanorods have been determined by scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD) spectroscopy respectively. It is found that, the as -deposited ZnO seed layer reduces lattice mismatching between ZnO and Si from 40.3 to 0.28%, therefore enhances the subsequent growth and crystalline quality of ZnO nanorods on Si substrate. The present methodology is simple, cost effective and highly applicable for synthesis of ZnO nanorods for optoelectronics applications.
Somvanshi, Divya; Jit, S. [Centre for Research in Microelectronics (CRME), Department of Electronics Engineering Indian Institute of Technology (Banaras Hindu University), Varanasi Uttar Pradesh-221005 (India)
Effect of near atmospheric pressure nitrogen plasma treatment on Pt/ZnO interface
The effect of near atmospheric pressure nitrogen plasma (NAP) treatment of platinum (Pt)/zinc oxide (ZnO) interface was investigated. NAP can nitride the ZnO surface at even room temperature. Hard x-ray photoelectron spectroscopy revealed that NAP treatment reduced the surface electron accumulation at the ZnO surface and inhibited the Zn diffusion into the Pt electrode, which are critical issues affecting the Schottky barrier height and the ideality factor of the Pt/ZnO structure. After NAP treatment, the Pt Schottky contact indicated an improvement of electrical properties. NAP treatment is effective for the surface passivation and the Schottky contact formation of ZnO.
Nagata, Takahiro; Haemori, Masamitsu; Chikyow, Toyohiro [International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Yamashita, Yoshiyuki [International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Synchrotron X-ray Station at SPring-8, National Institute for Materials Science, 1-1-1 Koto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan); Yoshikawa, Hideki; Kobayashi, Keisuke [Synchrotron X-ray Station at SPring-8, National Institute for Materials Science, 1-1-1 Koto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan); Uehara, Tsuyoshi [Sekisui Chemical Co., Ltd., Wadai, Tsukuba, Ibaraki 300-4292 (Japan)
Fabrication and Physics of CdTe Devices by Sputtering: Final Report, 1 March 2005 - 30 November 2008
Work to understand CdS/CdTe solar cell device physics; increase magnetron sputtering rate (while keeping high device quality); reduce thickness of CdTe layers (while keeping voltage and fill factor).
Compaan, A.; Collins, R.; Karpov, V.; Giolando, D.
ORNL DAAC, Southern African CD-ROM Vol. 3, March 8, 2004
Third CD-ROM for Southern Africa Now Available The ORNL DAAC announces the release of the third and final in a series of CD-ROMs prepared for the Southern African Regional Science...
NSLS-II Proposal for Approval of Conceptual Design (CD-0)
Proposal for Approval of Conceptual Design (CD-0) CD0 cover This proposal is to construct and then operate a new National Synchrotron Light Source, NSLS-II, at Brookhaven National...
C-340 Complex D&D Final Lessons Learned (Post CD-4), Environmental...
C-340 Complex D&D Final Lessons Learned (Post CD-4), Environmental Management Cleanup, Sep 2011 C-340 Complex D&D Final Lessons Learned (Post CD-4), Environmental Management...
T-685: Cisco Warranty CD May Load Malware From a Remote Site...
85: Cisco Warranty CD May Load Malware From a Remote Site T-685: Cisco Warranty CD May Load Malware From a Remote Site August 5, 2011 - 3:26pm Addthis PROBLEM: A vulnerability was...
Etching characteristics of ZnO thin films in chlorine-containing inductively coupled plasmas
This study examined the plasma etching characteristics of ZnO thin films etched in BCl"3/Ar, BCl"3/Cl"2/Ar and Cl"2/Ar plasmas with a positive photoresist mask. The ZnO etch rates were increased in a limited way by increasing the gas flow ratio of the ... Keywords: BCl3, Chlorine, Inductively coupled plasma, Plasma etching, Zinc oxychloride, ZnO
S. W. Na; M. H. Shin; Y. M. Chung; J. G. Han; S. H. Jeung; J. H. Boo; N. -E. Lee
Green synthesis of graphene nanosheets/ZnO composites and electrochemical properties
A green and facile approach was demonstrated to prepare graphene nanosheets/ZnO (GNS/ZnO) composites for supercapacitor materials. Glucose, as a reducing agent, and exfoliated graphite oxide (GO), as precursor, were used to synthesize GNS, then ZnO directly grew onto conducting graphene nanosheets as electrode materials. The small ZnO particles successfully anchored onto graphene sheets as spacers to keep the neighboring sheets separate. The electrochemical performances of these electrodes were analyzed by cyclic voltammetry, electrochemical impedance spectrometry and chronopotentiometry. Results showed that the GNS/ZnO composites displayed superior capacitive performance with large capacitance (62.2 F/g), excellent cyclic performance, and maximum power density (8.1 kW/kg) as compared with pure graphene electrodes. Our investigation highlight the importance of anchoring of small ZnO particles on graphene sheets for maximum utilization of electrochemically active ZnO and graphene for energy storage application in supercapacitors. - Graphical abstract: Glucose was used to synthesize GNS, then ZnO directly grew onto conducting graphene nanosheets as electrode materials for supercapacitor. Results showed that the composites have superior capacitive performance. Highlights: > Graphene nanosheets were synthesized via using glucose as a reducing agent. > The reductant and the oxidized product are environmentally friendly. > ZnO grew onto conducting graphene sheets keeping neighboring sheets separate. > The structure improves the contact between the electrode and the electrolyte. > Results showed that these composites have good electrochemical property.
Wang Jun, E-mail: firstname.lastname@example.com [College of Material Science and Chemical Engineering, Harbin Engineering University, Harbin 150001 (China); Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, Harbin 150001 (China); Gao Zan [College of Material Science and Chemical Engineering, Harbin Engineering University, Harbin 150001 (China); Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, Harbin 150001 (China); Li Zhanshuang; Wang Bin; Yan Yanxia; Liu Qi [College of Material Science and Chemical Engineering, Harbin Engineering University, Harbin 150001 (China); Mann, Tom [Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, Harbin 150001 (China); Zhang Milin [College of Material Science and Chemical Engineering, Harbin Engineering University, Harbin 150001 (China); Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, Harbin 150001 (China); Jiang Zhaohua [College of Chemical Engineering, Harbin Institute of Technology, Harbin 150001 (China)
The Effect of Zn-Rich Coatings on the Environmentally Assisted ...
... that offered by conventional coatings employed in armored vehicles. Improved corrosion protection via Zn-rich primers has been shown to improve the general�...
Ternary Phase Diagram of the Zn-Sn-P System for Fabrication of ...
First, we establish the phase diagram by equilibrium experiments using zinc, tin and their phosphides. At 700 �C, ZnSnP2 is almost stoichiometry,�...
Synthesis of ordered large-scale ZnO nanopore arrays
An effective approach is demonstrated for growing ordered large-scale ZnO nanopore arrays through radio-frequency magnetron sputtering deposition on porous alumina membranes (PAMs). The realization of highly ordered hexagonal ZnO nanopore arrays benefits from the unique properties of ZnO (hexagonal structure, polar surfaces, and preferable growth directions) and PAMs (controllable hexagonal nanopores and localized negative charges). Further evidence has been shown through the effects of nanorod size and thermal treatment of PAMs on the yielded morphology of ZnO nanopore arrays. This approach opens the possibility of creating regular semiconducting nanopore arrays for the application of filters, sensors, and templates.
Ding, G.Q.; Shen, W.Z.; Zheng, M.J.; Fan, D.H. [Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, Department of Physics, Shanghai Jiao Tong University, 1954 Hua Shan Road, Shanghai 200030 (China)
Plasma/Laser Assisted Template Free Synthesis of ZnO Pillars
The pillar morphology is achieved via pulsed lasing of plasma synthesized ZnO ... decreasing transmittance with increasing the energy of photon radiation.
Microscopic Study on the Interface Reaction between Ti and Al-Zn ...
Presentation Title, Microscopic Study on the Interface Reaction between Ti and Al -Zn Alloy during Ultra-Fast Heat Treatment. Author(s), Yue Zhao, David Nolan,�...
Microstructural Design of Piezoelectric ZnO Thin Films as High ...
Abstract Scope, For most piezoelectric (PE) applications, ZnO films having ... Energy Landscape in Frustrated Systems: Cation Hopping and Relaxation in�...
Homobuffer thickness effect on the background electron carrier concentration of epitaxial ZnO thin films
Epitaxial ZnO thin films were grown on r-plane sapphire substrates using plasma-assisted molecular-beam epitaxy. ZnO homobuffer layers grown at a lower temperature were introduced to improve the crystallinity of the top ZnO thin films. Thicker homobuffer layers lead to better crystallinity of the subsequent epitaxial ZnO thin films due to the strain relaxation effect. Residual background electron carrier concentration in these undoped ZnO thin films first decreases, then increases as the buffer layer thickness increases from {approx}1 to 30 nm, with a minimum electron concentration of {approx}1x10{sup 17} cm{sup -3} occurring in ZnO homobuffer of {approx}5 nm. These results demonstrate that the optimized ZnO homobuffer thickness to achieve both good ZnO crystallinity and low residual electron concentration is determined by the relative electron carrier concentration ratios and mobility ratios between the buffer and epi-ZnO layers.
Yang, Z.; Zhou, H. M.; Li, L.; Zhao, J. Z.; Liu, J. L. [Department of Electrical Engineering, Quantum Structures Laboratory, University of California, Riverside, California 92521 (United States); Chen, W. V.; Yu, P. K. L. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)
Ultrasound Atomizer-Microwave Heating Joint Synthesis of ZnO ...
Formation mechanism of shell ZnO nanostructures has been studied due to the ... Effect of Alloying Elements and Pulsed Electric Current Sintering Parameters�...
Highly Transparent and Conducting ALD of Doped ZnO Thin Films ...
... and Conducting ALD of Doped ZnO Thin Films for TCO Applications � Hybrid Aerogel/Nanorod Functional Materials for Energy and Sensing Applications.
Infrared Radiation Properties of CuO-ZnO-Based Sintered Material ...
Presentation Title, Infrared Radiation Properties of CuO-ZnO-Based Sintered Material Prepared for Energy-Saving Coating. Author(s), Chao Lian, Wei Wei, Hao�...
Experiments Involving Correlations Between CdTe Solar Cell Fabrication History and Intrinsic Device Stability
An orthogonal full-factorial design was used to study the effect of CdS and CdTe layer thickness, oxygen ambient during vapor CdCl2 (VCC) and the use of nitric-phosphoric (NP) acid as a pre-contact etch on the initial and stressed performance of CdS/CdTe small-area devices. The best initial device efficiency (using thinner CdS, thicker CdTe, no oxygen during VCC, and NP etch) also showed poor stability. Increasing the CdS thickness significantly improved stability with only a slight decrease in resulting initial performance. All devices used a thin margin of CdTe around the perimeter of the backcontact that was shown to significantly reduce catastrophic degradation and improve overall test statistics. The latter degradation is modeled by the formation of a weak-diode/low shunt resistance localized near the edge of finished devices. This shunting is believed to occur through the CdS/CdTe interface, rather than along the device edge, and is exacerbated by thinner CdS films.
Albin, D.; McMahon, T.; Berniard, T.; Pankow, J.; Demtsu, S.; Noufi, R.
Optical properties of CdS nanocrystal covered by polymer chains on the surface
We prepared novel CdS nanocrystal by colloid technique; CdS nanocrystal possessing polyethylene glycol tethered chains (PEG-TC) on the surface. A relatively sharp optical absorption peak was observed at around 3.4 eV. The size of the nanocrystal was ... Keywords: CdS, nanocrystals, photoluminescence, polyethylene glycol, quantum dot
I. Umezu; R. Koizumi; K. Mandai; T. Aoki-Matsumoto; K. Mizuno; M. Inada; A. Sugimura; Y. Sunaga; T. Ishii; Y. Nagasaki
Degradation and Capacitance-Voltage Hysteresis in CdTe Devices: Preprint
CdS/CdTe cells on CTO/ZTO TCO show greater intial performance than SnO2-gased substrates due to superior optical and electrical properties of the oxide layers and more rigorous CdCl2 processing. Performance unfiormity was a problem.
Albin, D. S.; Dhere, R. G.; Glynn, S. C.; DelCueto, J.; Metzger W. K.
Time and temperature dependence of CdS nanoparticles grown in a polystyrene matrix
Luminescent CdS nanocrystals embedded in a polystyrene matrix were successfully prepared. The in situ growth of CdS QDs was realized by thermal treatment of Cd bis(thiolate)/polymer foil at different times and temperatures (240�C and 300�C) ...
F. Antolini; E. Burresi; L. Stroea; V. Morandi; L. Ortolani; G. Accorsi; M. Blosi
Synthesis and characterization of ZnO and Ni doped ZnO nanorods by thermal decomposition method for spintronics application
Zinc oxide nanorods and diluted magnetic semiconducting Ni doped ZnO nanorods were prepared by thermal decomposition method. This method is simple and cost effective. The decomposition temperature of acetate and formation of oxide were determined by TGA before the actual synthesis process. The X-ray diffraction result indicates the single phase hexagonal structure of zinc oxide. The transmission electron microscopy and scanning electron microscopy images show rod like structure of ZnO and Ni doped ZnO samples with the diameter {approx} 35 nm and the length in few micrometers. The surface analysis was performed using X-ray photoelectron spectroscopic studies. The Ni doped ZnO exhibits room temperature ferromagnetism. This diluted magnetic semiconducting Ni doped ZnO nanorods finds its application in spintronics. - Highlights: Black-Right-Pointing-Pointer The method used is very simple and cost effective compared to all other methods for the preparation DMS materials. Black-Right-Pointing-Pointer ZnO and Ni doped ZnO nanorods Black-Right-Pointing-Pointer Ferromagnetism at room temperature.
Saravanan, R.; Santhi, Kalavathy [Materials Science Centre, Department of Nuclear Physics, University of Madras, Guindy Campus, Chennai-600 025 (India); Sivakumar, N. [Amrita Center for Nanosciences, Amrita Research Institute, Kochi-682 041 (India); Narayanan, V. [Department of Inorganic Chemistry, University of Madras, Guindy Campus, Chennai-600 025 (India); Stephen, A., E-mail: email@example.com [Materials Science Centre, Department of Nuclear Physics, University of Madras, Guindy Campus, Chennai-600 025 (India)
Influence of Surface Preparation on Scanning Kelvin Probe Microscopy and Electron Backscatter Diffraction Analysis of Cross Sections of CdTe/CdS Solar Cells: Preprint
In this work we investigated different methods to prepare cross sections of CdTe/CdS solar cells for EBSD and SKPM analyses. We observed that procedures used to prepare surfaces for EBSD are not suitable to prepare cross sections, and we were able to develop a process using polishing and ion-beam milling. This process resulted in very good results and allowed us to reveal important aspects of the cross section of the CdTe film. For SKPM, polishing and a light ion-beam milling resulted in cross sections that provided good data. We were able to observe the depletion region on the CdTe film and the p-n junction as well as the interdiffusion layer between CdTe and CdS. However, preparing good-quality cross sections for SKPM is not a reproducible process, and artifacts are often observed.
Moutinho, H. R.; Dhere, R. G.; Jiang, C. S.; Al-Jassim, M. M.
Semiconductor Quantum Rods as Single Molecule Fluorescent Biological Labels
shape-controlled colloidal CdSe quantum rods. Nano Lettersdiffusion of peptide-coated CdSe/CdS/ZnS nanorods studied byCdS/ZnS shells on colloidal CdSe nanorods. Journal Of The
Manufacturing Process Optimization to Improve Stability, Yield and Efficiency of CdS/CdTe PV Devices: Final Report, December 2004 - January 2009
The research by Colorado State University advances the understanding of device stability, efficiency, and process yield for CdTe PV devices.
Sampath, W. S.; Enzenroth, A.; Barth, K.
Charge transport properties of CdMnTe radiation detectors
Growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe)radiation detectors have been described. Alpha-particle spectroscopy measurements and time resolved current transient measurements have yielded an average charge collection efficiency approaching 100 %. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of tellurium inclusions within the detector bulk. Further, it has been shown that the role of tellurium inclusions in degrading chargecollection is reduced with increasing values of bias voltage. The electron transit time was determined from time of flight measurements. From the dependence of drift velocity on applied electric field the electron mobility was found to be n = (718 55) cm2/Vs at room temperature.
Kim K.; Rafiel, R.; Boardman, M.; Reinhard, I.; Sarbutt, A.; Watt, G.; Watt, C.; Uxa, S.; Prokopovich, D.A.; Belas, E.; Bolotnikov, A.E.; James, R.B.
Raman Studies of Nanocrystalline CdS:O Film
Oxygenated nanocrystalline CdS films show improved solar cell performance, but the physics and mechanism underlying this are not yet clearly understood. Raman study provides complementary information to the understanding obtained from other experimental investigations. A comprehensive analysis of the existing experimental data (including x-ray diffraction, transmission, transmission electron microscopy, and Raman) has led to the following conclusions: (1) The O-incorporation forms CdS1-xOx alloy nano-particles. (2) The observed evolution of the electronic structure is the result of the interplay between the alloy and quantum confinement effect. (3) The blue-shift of the LO phonon Raman peak is primarily due to the alloying effect. (4) Some oxygen atoms have taken the interstitial sites.
Zhang, Y.; Wu, X.; Dhere, R.; Zhou, J.; Yan, Y.; Mascarenhas, A.
Incorporation of Cu Acceptors in ZnO Nanocrystals
Doping of semiconductor nanocrystals is an important problem in nanomaterials research. Using infrared (IR) and x-ray photoelectron spectroscopy (XPS), we have observed Cu acceptor dopants that were intentionally introduced into ZnO nanocrystals. The incorporation of Cu2+ dopants increased as the diameter of the nanocrystals was increased from ~3 to 5 nm. Etching the nanocrystals with acetic acid revealed a core-shell structure, where a 2-nm lightly doped core is surrounded by a heavily doped shell. These observations are consistent with the trapped dopant model, in which dopant atoms stick to the surface of the core and are overgrown by the nanocrystal material.
Oo, W.M.H.; Mccluskey, Matthew D.; Huso, Jesse; Morrison, J.; Bergman, Leah; Engelhard, Mark H.; Saraf, Laxmikant V.
Pressurized Water Reactor AgInCd Control Rod Lifetime
Swelling of the lower end tip of AgInCd (AIC) absorber rods is one of the lifetime limiting phenomena for PWR control rods. Understanding the relationship between swelling and accumulated fluence is crucial to predicting the service life of these components. This report presents the initial results and analyses from a control rod absorber research program led by the EPRI Fuel Reliability Program, in close collaboration with Westinghouse Electric Company and AREVA NP. The goals of the program are to chara...
Bismuth-induced deep levels and carrier compensation in CdTe
First-principles calculations show that Bi on Cd site in CdTe can be either a donor, Bi_Cd+, or an acceptor, Bi_Cd- , depending on the Fermi level. The can bind a substitutional O (O_Te) with large binding energy of 1.40 eV. The calculated (0/-) transition level for B_Cd- - O_Te complex is in good agreement with the observed deep hole trapping level. Bi can also substitute Te to form an acceptor. The amphoteric nature of Bi in CdTe results in the pinning of the Fermi level and the high resistivity. We also discuss the origin of p-type CdTe at high Bi doping level.
Du, Mao-Hua [ORNL
Neutron-to-proton ratios of quasiprojectile and midrapidity emission in the {sup 64}Zn + {sup 64}Zn reaction at 45 MeV/nucleon
Simultaneous measurement of both neutrons and charged particles emitted in the reaction {sup 64}Zn + {sup 64}Zn at 45 MeV/nucleon allows comparison of the neutron to proton ratio at midrapidity with that at projectile rapidity. The evolution of N/Z in both rapidity regimes with increasing centrality is examined. For the completely reconstructed midrapidity material one finds that the neutron to proton ratio is above that of the overall {sup 64}Zn + {sup 64}Zn system. In contrast, the reconstructed ratio for the quasiprojectile is below that of the overall system. This difference provides the most complete evidence to date of neutron enrichment of midrapidity nuclear matter at the expense of the quasiprojectile.
Theriault, D.; Gauthier, J.; Grenier, F.; Moisan, F.; St-Pierre, C.; Roy, R. [Laboratoire de Physique Nucleaire, Departement de Physique, Universite Laval, Quebec, Quebec G1K 7P4 (Canada); Davin, B.; Hudan, S.; Paduszynski, T.; Souza, R. T. de [Department of Chemistry and Indiana University Cyclotron Facility, Indiana University, Bloomington, Indiana 47405 (United States); Bell, E.; Garey, J.; Iglio, J.; Keksis, A. L.; Parketon, S.; Richers, C.; Shetty, D. V.; Soisson, S. N.; Souliotis, G. A.; Stein, B. C. [Cyclotron Institute, Texas A and M University, College Station, Texas 77843 (United States)] (and others)
Fabrication and characterization of ZnO nanowire arrays with an investigation into electrochemical sensing capabilities
ZnO nanowire arrays were grown on a Si (100) substrate using the vapor-liquid-solid (VLS) method. ZnO nanowires were characterized by XRD, SEM, bright field TEM, and EDS. They were found to have a preferential orientation along the c-axis. The ...
Jessica Weber; Sathyaharish Jeedigunta; Ashok Kumar
Magnetic characterizations of sol-gel-produced mn-doped ZnO
Nanoparticles of ZnO doped with 6 at.% Mn were produced by a sol-gel method. X-ray diffraction confirms the hexagonal structure as that of the parent compound ZnO, and high-resolution electron transmission microscopy reveals a single-crystallite lattice. ...
R. Asmatulu; H. Haynes; M. Shinde; Y. H. Lin; Y. Y. Chen; J. C. Ho
DOI: 10.1002/adma.200702781 Aerogel Templated ZnO Dye-Sensitized Solar Cells**
DOI: 10.1002/adma.200702781 Aerogel Templated ZnO Dye-Sensitized Solar Cells** By Thomas W. Hamann silica aerogel films, featuring a large range of controllable thickness and porosity, are prepared as substructure templates. The aerogel templates are coated with ZnO via atomic layer deposition (ALD) to yield
Study of the P-type doping properties of ZnS nanocrystals
The paper presents the study of p-type doping properties of ZnS nanocrystals (Ncs) using the local density approximation theory (LDA). Doping with single species of N, P, or As, ZnS nanocrystals are found to have a low-doping concentration and efficiency, ...
Xiying Ma
Modeling Zn Adsorption and Desorption to Soils Zhenqing Shi1,2
, Newark, DE 19717, U.S.A. Keywords: adsorption, desorption, kinetics, soil organic matter, WHAM 1 was considered as the sole adsorbent for Zn binding to the tested soils (1). The mechanistic model WHAM was used to obtain Kp1 and Kp2 at various reaction conditions. In WHAM V calculations (3), Zn can bind to either
Sparks, Donald L.
Photoluminescence Characterization of ZnO Thin Films Grown by RF- Sputtering
This article presents photoluminescence (PL) characterization of ZnO thin films deposited by radio-frequency magnetron sputtering method on sapphire and n-type Si (100) substrates. PL measurements were carried out at room temperature to investigate the energy band gaps and optical quality of the ZnO thin films. In order to draw a specific picture of surface morphology of ZnO thin films, atomic force microscope images were taken. All the results were compared to the results obtained from the bulk ZnO sample. The results revealed that the energy band gap of ZnO thin films grown on n-type Si (100) is higher than ZnO on sapphire. However, energy band gap of bulk ZnO is higher compared to both ZnO on n-type Si (100) and sapphire (Al{sub 2}O{sub 3}). This is probably due to the crystalline quality because good crystallinity increases the radiation recombination and hence increase the intensity of the NBE emission.
Bakhori, S. K. Mohd; Ng, S. S.; Ahmad, M. A.; Ahmad, H.; Hassan, Z.; Hassan, H. Abu; Abdullah, M. J. [Nano-optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800, USM, Penang (Malaysia)
Microstructure and Mechanical Property of Cu-40%Zn-0.5%Cr Alloy ...
Yield stress of extruded P/M Cu-40Zn-0.5Cr brass alloy at 773 K was 514.6 MPa, high value of 54.7% of the conventional P/M Cu60-Zn40 brass alloy at same�...
Tailoring Selectivity for Electrocatalytic Oxygen Evolution on Ruthenium Oxides by Zn Substitution
Controlling gas emissions: Versatile control of the selectivity of an oxide electrocatalyst in the oxygen- and chlorine-evolution reactions was demonstrated by Zn substitution in RuO{sub 2}. The incorporation of Zn into the rutile structure alters the cation sequence along the [001] direction and modifies the structure of the active sites for both gas-evolution processes.
Petrykin, V.; Macounova, K; Shlyakhtin, O; Krtil, P
Nitrogen-Doped ZnO Nanowire Arrays for Photoelectrochemical Water Splitting
. First, we grow ZnO nanowires on a ZnO nanoparticle seeded indium-tin oxide (ITO) substrate using to the success of hydrogen technology is the efficient generation of hydrogen from a renewable energy source, most of the metal oxides have large bandgap energies, leading to limited light absorption
Li, Yat
Degradation of ZnO Window Layer for CIGS by Damp-Heat Exposure: Preprint
This paper summarizes our work with more details and an emphasis on the DH-induced degradation of Al-doped ZnO and Zn1-xMgxO alloys. The other two TCOs, ITO and F:SnO2, are not included here.
Pern, F.J.; To, B.; DeHart, C.; Li, X.; Glick, S. H.; Noufi, R.
Role of indium in highly crystalline ZnO thin films
Zinc oxide and indium doped zinc oxide (ZnO:In) transparent conducting thin films were deposited on glass substrates by pulsed DC magnetron sputtering using separate Zn and In targets. The independent control of the In content in ZnO has helped us to explore the role of indium in influencing the oriented (002) growth, crystallinity, conductivity and mobility of the doped films. The lowest resistivity of ZnO:In thin film is 2.73 Multiplication-Sign 10{sup -3} ohm-cm. At the optimal condition of high (002) orientation, ZnO:In films with electrical resistivity of 7.63 Multiplication-Sign 10{sup -3} ohm.cm and mobility of 126.4 cm{sup 2}/V.s are achieved.
Singh, Anil; Chaudhary, Sujeet; Pandya, Dinesh K. [Thin Film Laboratory, Physics Department, Indian Institute of Technology Delhi, New Delhi 110016 (India)
Atomic layer deposition of ZnO on ultralow-density nanoporous silica aerogel monoliths
We report on atomic layer deposition of an ? 2 -nm-thick ZnO layer on the inner surface of ultralow-density ( ? 0.5 % of the full density) nanoporoussilica aerogel monoliths with an extremely large effective aspect ratio of ? 10 5 (defined as the ratio of the monolith thickness to the average pore size). The resultant monoliths are formed by amorphous- SiO 2 core/wurtzite-ZnO shell nanoparticles which are randomly oriented and interconnected into an open-cell network with an apparent density of ? 3 % and a surface area of ? 10 0 m 2 g ? 1 . Secondary ion mass spectrometry and high-resolution transmission electron microscopy imaging reveal excellent uniformity and crystallinity of ZnO coating. Oxygen K -edge and Zn L 3 -edge soft x-ray absorption near-edge structure spectroscopy shows broadened O p - as well as Zn s - and d -projected densities of states in the conduction band.
S. O. Kucheyev; J. Biener; Y. M. Wang; T. F. Baumann; K. J. Wu; T. van Buuren; A. V. Hamza; J. H. Satcher Jr.; J. W. Elam; M. J. Pellin
Development of ZnO:Ga as an Ultrafast Scintillator
We report on several methods for synthesizing the ultra-fast scintillator ZnO(Ga), and measurements of the resulting products. This material has characteristics that make it an excellent alpha detector for tagging the time and direction of individual neutrons produced by t-d and d-d neutron generators (associated particle imaging). The intensity and decay time are strongly dependent on the method used for dopant incorporation. We compare samples made by diffusion of Ga metal to samples made by solid state reaction between ZnO and Ga2O3 followed by reduction in hydrogen. The latter is much more successful and has a pure, strong near-band-edge fluorescence and an ultra-fast decay time of the x-ray-excited luminescence. The luminescence increases dramatically as the temperature is reduced to 10K. We also present results of an alternate low-temperature synthesis that produces luminescent particles with a more uniform size distribution. We examine possible mechanisms for the bright near-band-edge scintillation and favor the explanation that it is due to the recombination of Ga3+ donor electrons with ionization holes trapped on H+ ion acceptors.
Bourret-Courchesne, E.D.; Derenzo, S.E.; Weber, M.J.
Magnetotransport Properties of High Quality Co:ZnO and Mn:ZnO Single Crystal Pulsed Laser Deposition films: Pitfalls Associated with Magnetotransport on High Resistivity Materials
The electrical resistivity values for a series of pure and doped (Co, Mn, Al) ZnO epitaxial films grown by pulsed laser deposition were measured with equipment designed for determining the DC resistivity of high resistance samples. Room-temperature resistances ranging from 7x10^1 ohms/square to 4x10^8 ohms/square were measured on vacuum-reduced cobalt-doped ZnO, (Al,Co) co-doped ZnO, pure cobalt-doped ZnO, Mn-doped ZnO, and undoped ZnO. Using a four-point collinear geometry with gold spring-pin contacts, resistivities were measured from 295 to 5 K for resistances of < ~10^12 ohms/square. In addition, magnetoresistance (MR) and Hall effect were measured as a function of temperature for select samples. Throughout the investigation, samples were also measured on commercially available instrumentation with good agreement. The challenges of transport measurements on high resistivity samples are discussed, along with some offered solutions to those challenges.
McCloy, John S.; Ryan, Joseph V.; Droubay, Timothy; Kaspar, Tiffany C.; Chambers, Scott A.; Look, David
Carbothermal reduction growth of ZnO nanostructures on sapphire-comparisons between graphite and activated charcoal powders
Zinc oxide (ZnO) nanostructures were grown by the vapour phase transport (VPT) method on a-plane sapphire substrates via carbothermal reduction of ZnO powders with various carbon powders. Specifically, graphite powder and activated charcoal powder (of ... Keywords: Growth, Nanostructures, ZnO
M. Biswas; E. McGlynn; M. O. Henry
Enhancement of the steady state minority carrier lifetime in HgCdTe photodiode using ECR plasma hydrogenation
Keywords: HgCdTe, diffusion length, field effect transistor, hydrogenation, lifetime, mobility, photodiode
Han Jung; Hee Chul Lee; Choong-Ki Kim
Thin Metal Oxide Films to Modify a Window Layer in CdTe-Based Solar Cells for Improved Performance
We report on CdS/CdTe photovoltaic devices that contain a thin Ta2O5 film deposited onto the CdS window layer by sputtering. We show that for thicknesses below 5 nm, Ta2O5 films between CdS and CdTe positively affect the solar cell performance, improving JSC, VOC, and the cell power conversion efficiency despite the insulating nature of the interlayer material. Using the Ta2O5 interlayer, a VOC gain of over 100 mV was demonstrated compared to a CdTe/CdS baseline. Application of a 1nm Ta2O5 interlayer enabled the fabrication of CdTe solar cells with extremely thin (less than 30 nm) CdS window layers. The efficiency of these cells exceeded that of a base line cell with 95 nm of CdS.
Lemmon, John P.; Polikarpov, Evgueni; Bennett, Wendy D.; Kovarik, Libor
The Antimony-Based Type I Clathrate compounds Cs8Cd18Sb28 and Cs8Zn18Sb28**
The title compounds lie in a new region of phase space for such a structure, and have stoichiometries in accord with a classical Zintl phase formulation. The small semiconductor gaps indicated by DFT calculations are also supported by their diamagnetic susceptibilities.
Liu, Yi; Wu, Li-Ming; Li, Long-Hua; Du, Shao-Wu; Corbett, John D.; Chen, Ling
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 52, NO. 5, OCTOBER 2005 2009 3-D Position Sensitive CdZnTe Spectrometer
by the U.S. Department of Energy/ NNSA NA-22 Office under Grant No. DE-FG52-01-NN20122. �?Corresponding
Growth of undoped and chromium-doped CdSxSe1-x crystals by the physical vapor transport method
Chromium-doped CdSe is one of the host materials being considered for solid-state tunable mid-infrared (IR) lasers. Alloying CdSe with CdS allows the increase of the thermal conductivity of the crystal (for CdS the thermal conductivity is a factor of ... Keywords: Cr2+:CdSSe, photoluminescence, physical vapor transport, tunable mid-IR solid-state lasers
U. N. Roy; Y. Cui; C. Barnett; K.-T. Chen; A. Burger; Jonathan T. Goldstein
Wind Resource Atlas of Oaxaca (CD-ROM)
The CD version of the Oaxaca Wind Resource Atlas, produced by the National Renewable Energy Laboratory's (NREL's) wind resource group, is the result of an extensive mapping study for the Mexican State of Oaxaca. This atlas identifies the wind characteristics and distribution of the wind resource in Oaxaca. The detailed wind resource maps and other information contained in the atlas facilitate the identification of prospective areas for use of wind energy technologies, both for utility-scale power generation and off-grid wind energy applications.
Elliott, D.; Schwartz, M.; Scott, G.; Haymes, S.; Heimiller, D.; George, R.
EE&RE, Session: CdTe - Progress and Roadmap Alignment (Presentation)
This project supports the Solar America Initiative by: (1) assistance to SAI Incubators (Primestar Solar, AvA Solar); (2) providing industry with baseline understanding of CdS/CdTe device formation and reliability--incorporation of low-cost, high quality TCOs, functionality and options for buffer layers, effect of various CdS options, effect of and importance CdSTe alloy formation, effect and options for CdCl{sub 2} treatment, effect and options for back contact, and effect of residual impurities during all stages of device formation; (3) understanding modes and mechanisms of cell-level stability; and (4) establishment of CdTe PDIL Tool for rapid material and process screening.
on CuxS-(Cd,Zn)S Photovoltaic Solar Energy Converters, UCID-on CnxS (Cd,Zn)S Photovoltaic Solar Energy Converters, UCID-on CuxS-(Cd,Zn)S Photovoltaic Solar Energy Converters, UCID-
Authors, Various
Genetically Engineered Protein Modules: Development and Applications in Anti-Viral Agent Screening and Cancer Marker Detection
Mattoussi, H. 2006. Capping of CdSe-ZnS quantum dots withMattoussi, H. 2006. Capping of CdSe-ZnS quantum dots withGerion, D. 2004. Fluorescent CdSe/ZnS nanocrystal-peptide
Mechanisms for Fluorescence Blinking and Charge Carrier Trapping in Single Semiconductor Nanocrystals
Trapping Mechanisms in Single CdSe/ZnS Quantum Dots fromTrapping Mechanisms in Single CdSe/ZnS Quantum Dots fromintermittency of single CdSe/ZnS core/shell quantum dot
Cordones, Amy Ashbrook
Solubilization of quantum dots with a recombinant peptide from Escherichia coli
can bind and stabilize CdSe/ZnS core/shell QDs. [22] Atrioctylphosphine oxide) coated CdSe-ZnS QDs was successfulfor binding to the core-shell CdSe-ZnS QDs and a hydrophilic
Iyer, Gopal; Weiss, Shimon; Pinaud, Fabien; Tsay, James
Molecular Control of the Nanoscale: Effect of Phosphine�Chalcogenide Reactivity on CdS�CdSe Nanocrystal Composition and Morphology
We demonstrate molecular control of nanoscale composition, alloying, and morphology (aspect ratio) in CdS�CdSe nanocrystal dots and rods by modulating the chemical reactivity of phosphine�chalcogenide precursors. Specific molecular precursors studied were sulfides and selenides of triphenylphosphite (TPP), diphenylpropylphosphine (DPP), tributylphosphine (TBP), trioctylphosphine (TOP), and hexaethylphosphorustriamide (HPT). Computational (DFT), NMR (31P and 77Se), and high-temperature crossover studies unambiguously confirm a chemical bonding interaction between phosphorus and chalcogen atoms in all precursors. Phosphine�chalcogenide precursor reactivity increases in the order: TPPE CdSe, and CdS1�xSex quantum rods were synthesized by injection of a single R3PE (E = S or Se) precursor or a R3PS�R3PSe mixture to cadmium�phosphonate at 320 or 250 �C. XRD and TEM reveal that the length-to-diameter aspect ratio of CdS and CdSe nanorods is inversely proportional to R3PE precursor reactivity. Purposely matching or mismatching R3PS�R3PSe precursor reactivity leads to CdS1�xSex nanorods without or with axial composition gradients, respectively. We expect these observations will lead to scalable and highly predictable �bottom-up� programmed syntheses of finely heterostructured nanomaterials with well-defined architectures and properties that are tailored for precise applications.
Ruberu, T. Purnima A.; Albright, Haley R.; Callis, Brandon; Ward, Brittney; Cisneros, Joana; Fan, Hua-Jun; Vela, Javier
Excitation density distribution in electron-beam-pumped ZnSe semiconductor lasers
The spatial density distribution of the absorbed energy in ZnSe semiconductor lasers excited by electrons with energies from 2 keV to 1 MeV is calculated by the Monte-Carlo method. Approximate analytic expressions determining the absorbed energy of electrons in ZnSe are presented. The pump power threshold in a semiconductor quantum-well ZnSe structure is experimentally determined. The lasing threshold in such structures is estimated as a function of the electron energy. (active media)
Donskoi, E N; Zalyalov, A N; Petrushin, O N; Savel'ev, Yu A; Tarasov, M D; Shigaev, Yu S [Russian Federal Nuclear Center 'All-Russian Scientific Research Institute of Experimental Physics', Sarov, Nizhnii Novgorod Region (Russian Federation); Zhdanova, E V; Zverev, M M; Peregudov, D V [Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University), Moscow (Russian Federation); Ivanov, S V; Sedova, I V; Sorokin, S V [A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation)
NIST/SEMATECH e-Handbook of Statistical Methods on CD
NIST/SEMATECH e-Handbook of Statistics on CD. ... You will still be able to download the components of the e-Handbook. ...
In vivo Prompt Gamma Neutron Activation Analysis Facility for Total Body Nitrogen and Cd
A Prompt Gamma Neutron Activation Analysis (PGNAA) system has been designed and constructed to measure the total body nitrogen and Cd for in vivo studies. An aqueous solution of KNO{sub 3} was used as phantom for system calibration. The facility has been used to monitor total body nitrogen (TBN) of mice and found that is related to their diet. Some mice swallowed diluted water with Cl{sub 2}Cd, and the presence of Cd was detected in the animals. The minimum Cd concentration that the system can detect was 20 ppm.
Munive, Marco; Revilla, Angel [Instituto Peruano de Energia Nuclear, Av. Canada 1470, Lima 41 (Peru); Solis, Jose L. [Instituto Peruano de Energia Nuclear, Av. Canada 1470, Lima 41 (Peru); Facultad de Ciencias, Universidad Nacional de Ingenieria, Av. Tupac Amaru 210, Lima (Peru)
Direct Patterning of CdSe Quantum Dots into Sub-100 nm Structures
Ordered, two-dimensional cadmium selenide (CdSe) arrays have been fabricated on indium-doped tin oxide (ITO) electrodes using the pattern replication in nonwetting templates (PRINT) process. CdSe quantum dots (QDs) with an average diameter of 2.7 nm and a pyridine surface ligand were used for patterning. The PRINT technique utilizes a perfluoropolyether (PFPE) elastomeric mold that is tolerant of most organic solvents, thus allowing solutions of CdSe QDs in 4-picoline to be used for patterning without significant deformation of the mold. Nanometer-scale diffraction gratings have been successfully replicated with CdSe QDs.
Hampton, Meredith J.; Templeton, Joseph L.; DeSimone, Joseph M.
Review of Photovoltaic Energy Production Using CdTe Thin-Film Modules: Extended Abstract Preprint
CdTe has near-optimum bandgap, excellent deposition traits, and leads other technologies in commercial PV module production volume. Better understanding materials properties will accelerate deployment.
NREL Determines Long-Lived Carriers and Differences in CdTe Superstrat...
"Comparison of Minority Carrier Lifetime Measurements in Superstrate and Substrate CdTe PV Devices." Proc. 37 th IEEE Photovoltaic Specialists Conference, 19-24 June 2011,...
Characterization and Analysis of CIGS and CdTE Solar Cells: December 2004 - July 2008
The work reported here embodies a device-physics approach based on careful measurement and interpretation of data from CIGS and CdTe solar cells.
Sites, J. R.
Midnite mine summary data (on CD-ROM). Data file
This two-CD set is a compilation of most of the results of research conducted by the U.S. Bureau of Mines on the Midnite Mine in northeastern Washington state on the Spokane Indian Reservation. The site is an inactive open pit uranium mine for which reclamation research and planning is being performed. Hydrologic monitoring and modeling of contaminated and potentially contaminated groundwater at the mine was performed and results of these studies make up part of volume 1 of the CD set. Likewise, analyses of the mine wastes were performed to determine what materials could be used for reclamation and which would have to be remediated, and these data also are on volume 1. To support research activities at the site and to serve as a historical reference on what is known about the mine site, a GIS database was developed, including images of the site, topographic data, analytical data, and numerous other data sets that were available from government agencies and the mining company. Modeling of the site geology in 2D and 3D also was performed as part of GIS database development, and files from this research are included.
Advanced CdTe Photovoltaic Technology: September 2007 - March 2009
During the last eighteen months, Abound Solar (formerly AVA Solar) has enjoyed significant success under the SAI program. During this time, a fully automated manufacturing line has been developed, fabricated and commissioned in Longmont, Colorado. The facility is fully integrated, converting glass and semiconductor materials into complete modules beneath its roof. At capacity, a glass panel will enter the factory every 10 seconds and emerge as a completed module two hours later. This facility is currently undergoing trials in preparation for large volume production of 120 x 60 cm thin film CdTe modules. Preceding the development of the large volume manufacturing capability, Abound Solar demonstrated long duration processing with excellent materials utilization for the manufacture of high efficiency 42 cm square modules. Abound Solar prototype modules have been measured with over 9% aperture area efficiency by NREL. Abound Solar demonstrated the ability to produce modules at industry leading low costs to NREL representatives. Costing models show manufacturing costs below $1/Watt and capital equipment costs below $1.50 per watt of annual manufacturing capacity. Under this SAI program, Abound Solar supported a significant research and development program at Colorado State University. The CSU team continues to make progress on device and materials analysis. Modeling for increased device performance and the effects of processing conditions on properties of CdTe PV were investigated.
Barth, K.
High-throughput manufacturing of thin-film CdS/CdTe photovoltaic modules. Annual subcontract report, 16 September 1996--15 January 1998
Cadmium telluride (CdTe) is recognized as one of the leading materials for low-cost photovoltaic modules. Solar Cells, Inc., has developed this technology and is scaling its pilot production capabilities to a multi-megawatt level. The Photovoltaic Manufacturing Technology (PVMaT) subcontract supports these efforts. Activities during the third phase of the program concentrated on process development, equipment design and testing, quality assurance, ES and H programs, and large-scale next-generation coating-system prototype development. These efforts broadly addressed the issues of the manufacturing process for producing thin-film, monolithic CdS/CdTe photovoltaic modules.
Sandwisch, D.W. [Solar Cells, Inc., Toledo, OH (United States)
Development of ZnO Based Light Emitting Diodes and Laser Diodes.
??ZnO based homojunction light emitting diode, double heterojunction light emitting diode, embedded heterojunction random laser diode and Fabry-Perot nanowire laser devices were fabricated and characterized.� (more)
Kong, Jieying
DD3, A New Approach to Make ZnO-Cu - Programmaster.org
For example, solar power conversion efficiency of 1.2% was obtained with ... Such heterojuction solar cells display a high (>80%) quantum efficiency of ..... R4, Control of ZnO Epitaxial Growth via Focused Ion Beam Induced Damage in�...
AA10, Evolution and Growth of Nanostructures on ZnO with Staged ...
Indeed, Zn interstitials are calculated to be fast diffusers with migration barriers of 0.57 eV [1]. The characteristic patterns of rays or trenches extending away from�...
Sonochemical synthesis of Er3+-doped ZnO nanospheres with enhanced upconversion photoluminescence
Er3+-doped ZnO nanospheres have been synthesized via a sonochemical conversion process. The formation mechanism of these nanocrystals is connected with the sonochemical effect of ultrasound irradiation. The as-prepared Er3+ doped ...
Jun Geng, Guang-Hui Song, Jun-Jie Zhu
AA4, Optical Properties of Gd Implanted ZnO Single Crystals
DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.
Realization of low resistive p-ZnO thin film by Al-As codoping
Al-As codoping into ZnO has been proposed to realize low resistive and stable p-ZnO thin film by RF magnetron sputtering. Al-As codoping has been achieved by As back diffusion from GaAs substrate and sputtering Al doped ZnO target. Hall measurements showed that the hole concentration increases with the increase of Al concentration from 10{sup 15} to 10{sup 20} cm{sup -3}. Among the grown films, 1 at% Al doped ZnO: As showed low resistivity (3.5x10{sup -2}{Omega}cm) with high hole concentration. X-ray diffraction shows that all the films are crystallized in wurtzite structure with (002) preferential orientation. The diffusion of As atoms from the substrate and the presence of dopants in the film have been confirmed by Rutherford ford back scattering and energy dispersive spectroscopy analysis, respectively.
Balakrishnan, L.; Gowrishankar, S.; Gopalakrishnan, N. [Thin Film Laboratory, Department of Physics, National Institute of Technology, Tiruchirappalli 620015 (India)
Facile synthesis of monodisperse ZnO nanocrystals by direct liquid phase precipitation
ZnO nanocrystals can be synthesized by a variety of methods. Among them, only a few nonhydrolytic methods have been successful at low synthesis temperatures in terms of size, crystallinity, morphology and surface-defect control. These methods require ...
Lan Chen; Justin D. Holmes; Sonia Ram�rez-Garc�a; Michael A. Morris
Design of Shallow P-Type Dopants in ZnO: Preprint
This paper describes approaches to lower the acceptor ionization energy in ZnO by codoping acceptors with donor or isovalent atoms and proposes a universal approach to overcome the doping polarity problem for wide-band-gap semiconductors.
Wei, S.-H.; Li, J.; Yan, Y.
Configurational Entropy and Structure of the Molten NaCl-KCl-ZnCl2 ...
In this context, we examine NaCl-KCl-ZnCl2 molten salts and pay particular attention to characterizing the thermodynamics and structure of these liquids in order�...
Relative Humidity Sensing Properties Of Cu{sub 2}O Doped ZnO Nanocomposite
In this paper we report application of Cu{sub 2}O doped ZnO composite prepared by solid state reaction route as humidity sensor. Pellet samples of ZnO-Cu{sub 2}O nanocrystalline powders with 2, 5 and 10 weight% of Cu{sub 2}O in ZnO have been prepared. Pellets have been annealed at temperatures of 200-500 deg. C and exposed to humidity. It is observed that as relative humidity increases, resistance of the pellet decreases for the humidity from 10% to 90%. Sample with 5% of Cu{sub 2}O doped in ZnO and annealed at 500 deg. C shows best results with sensitivity of 1.50 M{omega}/%RH. In this case the hysteresis is low and the reproducibility high, making it the suitable candidate for humidity sensing.
Pandey, N. K.; Tiwari, K.; Tripathi, A.; Roy, A.; Rai, A.; Awasthi, P. [Sensors and Materials Research Laboratory, Department of Physics, University Of Lucknow, U.P., Pin-226007 (India)
Floating Growth of Aligned ZnO Nanowire Arrays on Graphene in ...
The high sensitivity of 1.62 A/W-volt and fast response time ~300 ms obtained represent a significant improvement over ZnO/graphene UV detectors obtained�...
Thermal conductivity of self-assembled nano-structured ZnO bulk ceramics
In this study, we describe the changes in thermal conductivity behavior of ZnO-Al micro- and nano-two-phase self-assembled composites with varying grain sizes. The reduction in thermal conductivity values of micro-composites was limited to {approx}15% for ZnO-4% Al. However, nano-composites exhibited large reduction, by a factor of about three, due to uniform distribution of nano-precipitates (ZnAl2O4) and large grain boundary area. Interestingly, the micro-composites revealed continuous decrease in thermal conductivity with increase in Al substitution while the nano-composites exhibited the lowest magnitudes for 2% Al concentration. Raman spectra indicated that phonon confinement in ZnO-Al nano-composites causes drastic decrease in the value of thermal conductivity.
Zhao, Yu [Bio-Inspired Materials and Devices Laboraory (BMDL); Yan, Yongke [Bio-Inspired Materials and Devices Laboraory (BMDL); Kumar, Ashok [Bio-Inspired Materials and Devices Laboraory (BMDL); Wang, Hsin [ORNL; Porter, Wallace D [ORNL
Vibrational signatures of OTe and OTe-VCd in CdTe: A first principles study
Chen et al. [Phys. Rev. Lett. 96 (2006) 035508] experimentally observed vibrational signatures related to defects in oxygen-doped CdTe using ultrahigh resolution Fourier transform infrared (FTIR) spectroscopy. They observed an absorption peak at 350 cm{sup -1}. In addition, for samples grown under certain conditions, they observed two higher frequency peaks (1097 and 1108 cm{sup -1}) at low temperature that merged into one at room-temperature. They attributed the low-frequency peak (350 cm{sup -1}) to the vibration of O{sub Te} and the two higher frequency peaks to the vibrational modes of a O{sub Te}-V{sub Cd} complex. Subsequently, they reported similar modes around 1100 cm{sup -1} in O-doped CdSe [Phys. Rev. Lett. 101 (2008) 195502] which were attributed to an O{sub Se}-V{sub Cd} complex. We employed first-principles DFT calculations to calculate the vibrational modes of O{sub Te} and O{sub Te}-V{sub Cd} complex in CdTe. Our calculations show that the 350 cm{sup -1} mode is consistent with O{sub Te}. However, the frequencies of the modes around 1100 cm{sup -1} are more than twice the expected frequencies for O{sub Te}-V{sub Cd} complexes in CdTe (or O{sub Se}-V{sub Cd} in CdSe), indicating that the O{sub Te}-V{sub Cd} complex cannot be the cause of the observed 1100 cm{sup -1} modes. A search for a new defect model is in order.
Thienprasert, J.T. [Kasetsart University, Thailand; Limpijumnong, Sukit [Kasetsart University, Thailand; Janotti, Anderson [University of California, Santa Barbara; Van de Walle, C.G. [University of California, Santa Barbara; Zhang, Lijun [ORNL; Du, Mao-Hua [ORNL; Singh, David J [ORNL
Data:2dd33cd4-f79d-40c1-a48a-0516be8f37cd | Open Energy Information
cd4-f79d-40c1-a48a-0516be8f37cd cd4-f79d-40c1-a48a-0516be8f37cd No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: Loup River Public Power Dist Effective date: 2013/01/15 End date if known: Rate name: District Owned Lighting EWN 50000 Sector: Commercial Description: Source or reference: http://www.loup.com/customersvc/rates.asp Source Parent: Comments Applicability Demand (kW) Minimum (kW): Maximum (kW): History (months): Energy (kWh) Minimum (kWh): Maximum (kWh): History (months): Service Voltage Minimum (V): Maximum (V): Character of Service Voltage Category: Phase Wiring: << Previous 1 2 3 Next >>
Data:E7cd8f13-91cd-4195-9375-974df2fa66d6 | Open Energy Information
cd8f13-91cd-4195-9375-974df2fa66d6 cd8f13-91cd-4195-9375-974df2fa66d6 No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: Parke County Rural E M C Effective date: 2012/04/01 End date if known: Rate name: Yard Light Service: Mercury Vapor, 175W Sector: Lighting Description: Parke County REMC shall charge and collect for Yard and/or Street lighting service based on availability, character of service, monthly rate, and tax adjustment. AVAILABILITY: Available to any member of Parke County REMC for continuous, year-round service for out- door lighting where120 volt service exists ahead of the meter loop.
Recrystallization of PVD CdTe Thin Films Induced by CdCl2 Treatment -- A Comparison Between Vapor and Solution Processes: Preprint
This paper describes the large concentration of 60..deg.. <111> twin boundaries that was observed in every CdTe film analyzed in this work, even after recrystallization and grain growth, confirming the low energy of these interfaces.
Mountinho, H. R.; Dhere, R. G.; Romero, M. J.; Jiang, C. S.; To, B.; Al-Jassim, M. M.
The Study On The Physical Properties Of CdS Quantum Dots Synthesized By Ligand Exchange in Cd{sup 2+}-thiol Aqueous Solutions
We synthesized CdS quantum dots in aqueous medium using three thiolate-ligands, 2-mercaptoethanol (2ME), 3-mercaptopropanoic acid (MPA) and dimercaprol (BAL) by ligand exchange method. With a fixed concentration of thiols, the absorption edge of the quantum dots formed shifted towards shorter wavelength, as to the decreasing of a concentration of CdCl{sub 2}. When a concentration of CdCl{sub 2} and thiol was same, band gap energies and average sizes of the quantum dots were shown to be 2.65 eV, 3.26 nm for MPA, 2.84 eV, 3.16 nm for 2 ME and 3.16 eV, 1.81 nm for BAL, respectively. PL spectra analysis shows that as the decrease in molar concentration of CdCl{sub 2}, emission peak shifted towards shorter wavelength.
Ha, S. Y.; Yoo, D. S.; Kim, I. G.; Choo, M. S.; Kim, G. W.; Lee, E. S. [Department of Physics, Changwon National University, Changwon 641-773 (Korea, Republic of); Lee, B. C. [Laboratory for Quantum Optics, Korea Atomic Energy Research Institute, Daejon 306-600 (Korea, Republic of)
Data:E66cd4e3-2572-4c8e-80cd-b95d7043582d | Open Energy Information
cd4e3-2572-4c8e-80cd-b95d7043582d cd4e3-2572-4c8e-80cd-b95d7043582d No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: Borough of Chambersburg, Pennsylvania (Utility Company) Effective date: 2004/05/03 End date if known: Rate name: Area Lighting Rate- Customer Installed (250W) Sector: Lighting Description: Source or reference: ISU Documentation Source Parent: Comments Applicability Demand (kW) Minimum (kW): Maximum (kW): History (months): Energy (kWh) Minimum (kWh): Maximum (kWh): History (months): Service Voltage Minimum (V): Maximum (V): Character of Service Voltage Category: Phase Wiring: << Previous
Data:86bf1618-81cd-486f-a25a-8d7b3e9a7cd8 | Open Energy Information
-81cd-486f-a25a-8d7b3e9a7cd8 -81cd-486f-a25a-8d7b3e9a7cd8 No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: Grand Electric Coop, Inc Effective date: 2012/07/01 End date if known: Rate name: Metered Security Light - 250 HPS Sector: Lighting Description: Source or reference: ISU Documentation Source Parent: Comments Applicability Demand (kW) Minimum (kW): Maximum (kW): History (months): Energy (kWh) Minimum (kWh): Maximum (kWh): History (months): Service Voltage Minimum (V): Maximum (V): Character of Service Voltage Category: Phase Wiring: << Previous 1 2 3 Next >> << Previous 1 2 3 Next >>
Data:486ba353-7cd2-4bce-99a8-c2c4d10079cd | Open Energy Information
53-7cd2-4bce-99a8-c2c4d10079cd 53-7cd2-4bce-99a8-c2c4d10079cd No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: City of Duncan, Oklahoma (Utility Company) Effective date: End date if known: Rate name: Security Lighting- (400W SV Directional Flood Lighting on existing DPUA utility Pole) Sector: Lighting Description: This rate schedule is available on an annual basis to any customer for illumination of outdoor areas. Source or reference: ISU Documentation Rate Binder Ted #9 Source Parent: Comments Applicability Demand (kW) Minimum (kW): Maximum (kW): History (months): Energy (kWh) Minimum (kWh): Maximum (kWh):
Thin-film polycrystalline n-ZnO/p-CuO heterojunction
Results of X-ray diffraction and spectral-optical studies of n-ZnO and p-CuO films deposited by gas-discharge sputtering with subsequent annealing are presented. It is shown that, despite the difference in the crystal systems, the polycrystallinity of n-ZnO and p-CuO films enables fabrication of a heterojunction from this pair of materials.
Lisitski, O. L.; Kumekov, M. E.; Kumekov, S. E. [Satpaev Kazakh National Technical University (Kazakhstan)], E-mail: email@example.com; Terukov, E. I. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
Conversion mechanism of conductivity of phosphorus-doped ZnO films induced by post-annealing
The effects of post-annealing on conductivity of phosphorus-doped ZnO (PZO) films grown at 500 Degree-Sign C by radio frequency magnetron sputtering are investigated in a temperature ranging from 600 Degree-Sign C to 900 Degree-Sign C. The as-grown PZO exhibits n-type conductivity with an electron concentration of 1.19 Multiplication-Sign 10{sup 20} cm{sup -3}, and keeps n-type conductivity as annealed at 600 Degree-Sign C-700 Degree-Sign C but electron concentration decreases with increasing temperature. However, it converts to p-type conductivity as annealed at 800 Degree-Sign C. Further increasing temperature, it still shows p-type conductivity but the hole concentration decreases. It is found that the P occupies mainly Zn site (P{sub Zn}) in the as-grown PZO, which accounts for good n-type conductivity of the as-grown PZO. The amount of the P{sub Zn} decreases with increasing temperature, while the amount of Zn vacancy (V{sub Zn}) increases from 600 Degree-Sign C to 800 Degree-Sign C but decreases greatly at 900 Degree-Sign C, resulting in that the amount of P{sub Zn}-2V{sub Zn} complex increases with increasing temperature up to 800 Degree-Sign C but decreases above 800 Degree-Sign C. It is suggested that the P{sub Zn}-2V{sub Zn} complex acceptor is responsible for p-type conductivity, and that the conversion of conductivity is due to the change of the amount of the P{sub Zn} and P{sub Zn}-2V{sub Zn} with annealing temperature.
Li, Jichao; Yao, Bin [Key Laboratory of Physics and Technology for Advanced Batteries, Ministry of Education and Department of Physics, Jilin University, Changchun 130023 (China) [Key Laboratory of Physics and Technology for Advanced Batteries, Ministry of Education and Department of Physics, Jilin University, Changchun 130023 (China); State Key Laboratory of Superhard Materials and College of Physics, Jilin University, Changchun 130023 (China); Li, Yongfeng [Key Laboratory of Physics and Technology for Advanced Batteries, Ministry of Education and Department of Physics, Jilin University, Changchun 130023 (China)] [Key Laboratory of Physics and Technology for Advanced Batteries, Ministry of Education and Department of Physics, Jilin University, Changchun 130023 (China); Ding, Zhanhui; Xu, Ying [State Key Laboratory of Superhard Materials and College of Physics, Jilin University, Changchun 130023 (China)] [State Key Laboratory of Superhard Materials and College of Physics, Jilin University, Changchun 130023 (China); Zhang, Ligong; Zhao, Haifeng; Shen, Dezhen [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun 130033 (China)] [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun 130033 (China)
Atomic Layer Deposition of ZnO on Multi-walled Carbon Nanotubes and Its Use for Synthesis of CNT�ZnO Heterostructures
at the atomic level. It has been applied to deposit a variety of materials including oxides and metals on various nonplanar high-aspect-ratio substrates [8]. ALD on CNTs has been an interesting topic, but there are rela- tively few reports compared to ALD... at *560 and *630 nm, a feature similar to the PL of ZnO nanowire reported by Fan et al. [21]. Emission in the green spectra range is commonly observed in bulk and nanostructure ZnO and the origin is still under debate [22, 23]. The orange�red emission...
Synthesis and optical properties of hierarchical pure ZnO nanostructures
We report the catalyst-free synthesis of hierarchical pure ZnO nanostructures with 6-fold structural symmetry by two-step thermal evaporation process. At the first step, the hexagonal-shaped nanowires consisting of a great deal of Zn and little oxide were prepared via the layer-by-layer growth mechanism; and at the second step, hierarchical pure ZnO nanostructures were synthesized by evaporating the Zn source on the basis of the step-one made substrate. Scanning electron microscopy, transmission electron microscope images, and the corresponding selected area electron diffraction pattern have been utilized to reveal the screw dislocation growth mechanism, through which the single crystal ZnO nanorods are epitaxially grown from the side-wall of central axial nanowires. Raman and photoluminescence spectra further indicate that, for the hierarchical ZnO nanostructures, the ultraviolet peak is related to the free exciton recombination, while the oxygen vacancies and high surface-to-volume ratio are responsible for the strong green peak emission.
Fan, D.H.; Zhu, Y.F. [Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, Department of Physics, Shanghai Jiao Tong University, 1954 Hua Shan Road, Shanghai 200030 (China); Shen, W.Z. [Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, Department of Physics, Shanghai Jiao Tong University, 1954 Hua Shan Road, Shanghai 200030 (China)], E-mail: email@example.com; Lu, J.J. [Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, Department of Physics, Shanghai Jiao Tong University, 1954 Hua Shan Road, Shanghai 200030 (China)
Microwave-assisted low temperature synthesis of wurtzite ZnS quantum dots
In this work we report, for the first time, on microwave assisted synthesis of wurtzite ZnS quantum dots (QDs) in controlled reaction at temperature as low as 150 Degree-Sign C. The synthesis can be done in different microwave absorbing solvents with multisource or single source precursors. The QDs are less than 3 nm in size as characterized by transmission electron microscopy (TEM) using selected area electron diffraction (SAED) patterns to confirm the wurtzite phase of ZnS QDs. The optical properties were investigated by UV-Vis absorption which shows blue shift in absorption compared to bulk wurtzite ZnS due to quantum confinement effects. The photoluminescence (PL) spectra of QDs reveal point defects related emission of ZnS QDs. - Graphical abstract: Microwave assisted synthesis of wurtzite ZnS quantum dots (QDs) have been achieved in controlled reaction at temperature as low as 150 Degree-Sign C. The synthesis was performed in different microwave absorbing solvents with multisource or single source precursors for very short reaction periods due to effective heating with microwaves. Highlights: Black-Right-Pointing-Pointer Wurtzite a high temperature phase of ZnS was synthesized at low temperature. Black-Right-Pointing-Pointer Low temperature synthesis was possible because of the use of microwave absorbing solvents. Black-Right-Pointing-Pointer Capping agent was used to control the size of Quantum Dots. Black-Right-Pointing-Pointer Two different systems were developed using single molecular precursor and multisource precursors.
Shahid, Robina, E-mail: firstname.lastname@example.com [Division of Functional Materials, Royal Institute of Technology (KTH), 16440, Kista, Stockholm (Sweden); Toprak, Muhammet S., E-mail: email@example.com [Division of Functional Materials, Royal Institute of Technology (KTH), 16440, Kista, Stockholm (Sweden); Muhammed, Mamoun [Division of Functional Materials, Royal Institute of Technology (KTH), 16440, Kista, Stockholm (Sweden)
One-Step Growth of Ge doped ZnO Tubes by Thermal Evaporation
In this paper we report a simple thermal evaporation technique (horizontal tube furnace) to grow the bulk-quantity of germanium (Ge) doped zinc oxide (ZnO) tubes on the Si substrate by using one-step thermal evaporation of a mixed powder of Ge and ZnO. The microstructure and optical properties of the Ge doped ZnO tubes have been investigated by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), X-ray diffraction, photoluminescence (PL) spectrometer and Raman spectrometer. The investigation of structural properties indicated that the structures consist of bulk quantities of cylindrical rod and tube with diameter around 1micron. EDX reveals that the tube structures have Ge, Zn and O{sub 2} compositions and XRD analysis indicated the product is mainly composed of Ge, zinc germanium oxide (Zn{sub 2}GeO{sub 4}) and small proportion of ZnO. Room temperature photoluminescence (PL) spectrum shows broad emission peaks around 400 nm, opening up a route to potential applications in future optoelectronic devices. Raman measurement also measured at room temperature for these tubes.
Jumidali, M. M. [School of Physics, Universiti Sains Malaysia (USM), 11800 Minden, Penang (Malaysia); Faculty of Applied Science, Universiti Teknologi MARA, 13500 Penang (Malaysia); Hashim, M. R. [School of Physics, Universiti Sains Malaysia (USM), 11800 Minden, Penang (Malaysia); Sulieman, K. M. [Faculty of Applied Science, Universiti Teknologi MARA, 13500 Penang (Malaysia)
Ultrasonic/surfactant assisted of CdS nano hollow sphere synthesis and characterization
CdS hollow nanospheres with diameters ranging from 40 to 150 nm have been synthesized by a surfactant-assisted sonochemical route. The successful vesicle templating indicates that the outer leaflet of the bilayer is the receptive surface in the controlled growth of CdS nanoparticles which provide the unique reactor for the nucleation and mineralization growth of CdS nanoparticles. The CdS nanostructures obtained were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, ultraviolet-visible spectroscopy and photoluminescence spectroscopy. Structural characterization of hollow CdS nanospheres indicates that these products packed with square subunits having sizes between 5 and 7 nm in diameter. The formation of the hollow nanostructure was explained by a vesicle template mechanism, in which sonication and surfactant play important roles. The band-edge emission and surface luminescence of the CdS nanoparticles were observed. -Research Highlights: {yields} CdS hollow nanospheres with diameters of 40-150 nm were synthesized. {yields} Nanoparticles were characterized by UV/Vis and photoluminescence. {yields} Nanospheres are composed of smaller nanocrystals with the average size of 6.8 nm. {yields} The band gap energy of the CdS nanoparticles is higher than its bulk value.
Rafati, Amir Abbas, E-mail: firstname.lastname@example.com [Department of Physical Chemistry, Faculty of Chemistry, Bu-Ali Sina University, P.O. Box 65174, Hamedan (Iran, Islamic Republic of); Borujeni, Ahmad Reza Afraz [Department of Physical Chemistry, Faculty of Chemistry, Bu-Ali Sina University, P.O. Box 65174, Hamedan (Iran, Islamic Republic of); Najafi, Mojgan [Department of Materials Engineering, Hamedan University of Technology (HUT), Hamedan (Iran, Islamic Republic of); Bagheri, Ahmad [Department of Physical Chemistry, Faculty of Chemistry, Bu-Ali Sina University, P.O. Box 65174, Hamedan (Iran, Islamic Republic of)
Photovoltaic cells fabricated by electrophoretic deposition of CdSe nanocrystals
Photovoltaic cells fabricated by electrophoretic deposition of CdSe nanocrystals Nathanael J. Smith Electrophoretic deposition was used to deposit CdSe nanocrystals on TiO2 for use in photovoltaic cells formed. A solar cell constructed using electrophoretic deposition exhibited a photovoltaic response from
Smith, Nathanael J.
Oxygen Incorporation During Fabrication of Substrate CdTe Photovoltaic Devices: Preprint
Recently, CdTe photovoltaic (PV) devices fabricated in the nonstandard substrate configuration have attracted increasing interest because of their potential compatibility with flexible substrates such as metal foils and polymer films. This compatibility could lead to the suitability of CdTe for roll-to-roll processing and building-integrated PV. Currently, however, the efficiencies of substrate CdTe devices reported in the literature are significantly lower ({approx}6%-8%) than those of high-performance superstrate devices ({approx}17%) because of significantly lower open-circuit voltage (Voc) and fill factor (FF). In our recent device development efforts, we have found that processing parameters required to fabricate high-efficiency substrate CdTe PV devices differ from those necessary for traditional superstrate CdTe devices. Here, we investigate how oxygen incorporation in the CdTe deposition, CdCl2 heat treatment, CdS deposition, and post-deposition heat treatment affect device characteristics through their effects on the junction. By adjusting whether oxygen is incorporated during these processing steps, we have achieved Voc values greater than 860 mV and efficiencies greater than 10%.
Duenow, J. N.; Dhere, R. G.; Kuciauskas, D.; Li, J. V.; Pankow, J. W.; DeHart, C. M.; Gessert, T. A.
Influence of Surfactants and Charges on CdSe Quantum Dots
The chemistry between CdSe quantum dots and common surface capping ligands is invested using density functional theory. We will discuss the electronic structures and optical properties of CdSe QDs controlled by the size of particle, self-organization, capping ligands, and positive charges. Charges on quantum dots have profound effects on their structures, binding energies, and optical properties.
Yang, Ping; Tretiak, Sergei; Ivanov, Sergei
Phase transition on CdSe thin films by changing the volume concentration of Se
In this work CdSe thin films were grown by chemical bath deposition (CBD)6 onto glass substrate with approximately 2000 � thickness. The samples have been prepared by changing the volume concentration of the solution in the range of 5-45 ... Keywords: CdSe, thin films, chemical bath, phase transitions, semiconductors
M. Rub�n; J. I. Cortez; H. Ju�rez; E. Rosendo; T. D�az; G. Garc�a Salgado; I. Villaverde; R. Lozada-Morales; O. Portillo-Moreno; O. Zelaya-Ngel
Supplementary figure legends Supplementary Figure 1. Methods for counting memory P14 CD8 T cells
staining were loaded into imagej64 software. The two images were superimposed on one another using for example) were converted to black and white using the "make binary" function in imagej64 software (middle of mean fluorescence intensity analysis on CD31+ vessels. Single parameter images of both CXCL9 and CD31
Accelerated Stress Testing and Diagnostic Analysis of Degradation in CdTe Solar Cells
The primary goal of this study was to ascertain the presence and types of mechanisms affecting CdS/CdTe device stability in the temperature range of 60 to 120 ..deg..C. It should be noted that the results presented were specific to cells made using the specific growth conditions described.
Albin, D. S.
Bert Hayes, email@example.com How to Create a Custom Live CD for Secure
CD for secure remote incident handling on Windows and Linux systems. The process will include how for Remote Incident Handling 2 Bert Hayes, firstname.lastname@example.com Table of Contents?..................................................................................................................39 #12;How to Create a Custom Live CD for Remote Incident Handling 3
Texas at Austin, University of
Developing New Nanoprobes from Semiconductor Nanocrystals
Water-Soluble Silica- Coated CdSe/ZnS Semiconductor QuantumEnhanced Luminescence of CdSe Quantum Dots on Gold Colloids.CdS/ZnS shells on colloidal CdSe nanorods. Journal Of The
Fu, Aihua
Health and environmental hazards of CdTe photovoltaic module production, use and decommissioning
Health and environmental (H&E) risks presented by CdTe photovoltaic module production, use and decommissioning have been reviewed and discussed by several authors. Several H&E concerns exit. The estimated risks are based on extrapolations of toxicity, environmental mobility, and bioavailability data for other inorganic cadmium compounds. Little information, however, is available about CdTe itself. In response to the increased interest in CdTe, Brookhaven National Laboratory (BNL) has been engaged in a cooperative research program with the National Institute of Environmental Health Sciences (NIEHS), the Fraunhofer Institute for Solid State Technology (IFT), and the GSF Institute of Chemical Ecology to develop fundamental toxicological and environmental data for CdTe. This paper describes the results of these studies, and their potential implications with respect to the H&E hazards presented by CdTe module production, use and decommissioning.
Moskowitz, P.D. [Brookhaven National Lab., Upton, NY (United States); Steinberger, H. [Fraunhofer Institut fur Festkorpertechnologie, Munchen (Germany); Thumm, W. [GSF-Institute of Ecological Chemistry, Oberschleissheim (Germany)
Surface Plasmon Excitation via Au Nanoparticles in CdSe Semiconductor
We present experimental evidence for the large Raman and photoluminescence enhancement in CdSe semiconductor films grown on Si and glass substrates due to excitation of surface plasmon resonances in proximate gold metal nanoparticles deposited on the surface of CdSe film. Heterojunction diodes containing n-CdSe on p-Si semiconductor were fabricated and the surface of the diodes was in situ coated with Au nanoparticles using the ultra-high vacuum pulsed-laser deposition technique. A significant enhancement of the photocurrent was obtained in CdSe/p-Si containing Au nanoparticles on the surface compared to CdSe/p-Si due to the enhanced photo-absorption within the semiconductor by the phenomenon of surface plasmon resonance. These observations suggest a variety of approaches for improving the performance of devices such as photodetectors, photovoltaic, and related devices, including biosensors.
Pradhan, A. K. [Department of Engineering Norfolk State University, 700 Park Avenue, Norfolk, VA 23504 (United States); Department of Physics, Fisk University, 1000, 17 Avenue North, Nashville, TN 37208 (United States); Konda, R. B.; Mundle, R.; Mustafa, H.; Bamiduro, O. [Department of Engineering Norfolk State University, 700 Park Avenue, Norfolk, VA 23504 (United States); Roy, U. N.; Cui, Y. [Department of Physics, Fisk University, 1000, 17 Avenue North, Nashville, TN 37208 (United States); Burger, A. [Department of Physics, Fisk University, 1000, 17 Avenue North, Nashville, TN 37208 (United States); Department of Engineering Norfolk State University, 700 Park Avenue, Norfolk, VA 23504 (United States)
Surface structure of CdSe Nanorods revealed by combined X-ray absorption fine structure measurements and ab-initio calculations
A) and relaxed (B) 2.4 nm diameter CdSe nanowire structuresSurface Structure of CdSe Nanorods Revealed by Combined X-underestimate of the bulk CdSe lattice constant predicted by
Surface Enthalpies of Nanophase ZnO with Different Morphologies
A direct calorimetric measurement of the dependence of the surface enthalpy of nanophase ZnO on morphology is reported. Nanoparticles, nanoporous composites, nanorods, and nanotetrapods were prepared with various sizes and their surface enthalpies were derived from their drop solution enthalpies in molten sodium molybdate. Water adsorption calorimetry for nanoparticles and nanorods was carried out to characterize the stabilization effect of surface hydration. The surface enthalpies of hydrated surfaces for nanoparticles, nanoporous composites, nanorods and nanotetrapods are 1.31�0.07, 1.42�0.21, 5.19�0.56, and 5.77�2.50 J/m2, respectively, while those of the anhydrous surfaces are 2.55�0.23, 2.74�0.16, 6.67�0.56, and 7.28�2.50 J/m2. The surface enthalpies of nanoparticles are the same as those of nanoporous composites, and are much lower than those of nanorods and nanotetrapods, which are also close to each other. The dependence of surface enthalpy on morphology is discussed in terms of exposed surface structures. This is the first time that calorimetry on nanocrystalline powders bas been able to detect differences in surface energetics of materials having different morphologies.
Zhang, Peng; Xu, Fen; Navrotsky, Alexandra; Lee, Jong Soo; Kim, Sangtae; Liu, Jun
Direct Correlation of CdTe Solar Cell Stabiity with Mobile Ion Charge Generation During Accelerated Lifetime Testing: Preprint
CdS/CdTe cells deposited on CTO/ZTO TCO substrates show greater degradation than similar devices fabricated on cSnO2/iSnO2 substrates.
Albin, D. S.; Dhere, R. G.; Glynn, S. C.; Metzger, W. K.
High-sensitive sensor of dopamine based on photoluminescence quenching of hierarchical CdS spherical aggregates
Hierarchical CdS spherical aggregates have been fabricated by an assembling strategy starting from nanoparticles, which opens a general way to obtain hierarchical spherical aggregates of different types of materials. The hierarchical CdS spherical aggregates ...
Binjie Sun, Changzheng Wang
The Application of Compact Discs (CD-ROM) in the Atmospheric Sciences and Related Fields: An Update
This paper describes the current application of compact discs (CD-ROM) to the storage and distribution of datasets for atmospheric sciences and related disciplines. CD-ROM technology is reviewed, currently available discs are listed, and a look ...
Clifford F. Mass
Fabrication of ZnO photonic crystals by nanosphere lithography using inductively coupled-plasma reactive ion etching with CH{sub 4}/H{sub 2}/Ar plasma on the ZnO/GaN heterojunction light emitting diodes
This article reports fabrication of n-ZnO photonic crystal/p-GaN light emitting diode (LED) by nanosphere lithography to further booster the light efficiency. In this article, the fabrication of ZnO photonic crystals is carried out by nanosphere lithography using inductively coupled plasma reactive ion etching with CH{sub 4}/H{sub 2}/Ar plasma on the n-ZnO/p-GaN heterojunction LEDs. The CH{sub 4}/H{sub 2}/Ar mixed gas gives high etching rate of n-ZnO film, which yields a better surface morphology and results less plasma-induced damages of the n-ZnO film. Optimal ZnO lattice parameters of 200 nm and air fill factor from 0.35 to 0.65 were obtained from fitting the spectrum of n-ZnO/p-GaN LED using a MATLAB code. In this article, we will show our recent result that a ZnO photonic crystal cylinder has been fabricated using polystyrene nanosphere mask with lattice parameter of 200 nm and radius of hole around 70 nm. Surface morphology of ZnO photonic crystal was examined by scanning electron microscope.
Chen, Shr-Jia; Chang, Chun-Ming; Kao, Jiann-Shiun; Chen, Fu-Rong; Tsai, Chuen-Horng [Engineering and System Science, National Tsing Hua University, Hsinchu, 30013 Taiwan (China); Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu, 300 Taiwan (China); Engineering and System Science, National Tsing Hua University, Hsinchu, 30013 Taiwan (China)
Hybrid structure of polyaniline/ZnO nanograss and its application in dye-sensitized solar cell with performance improvement
Polyaniline (PANI) hybridized ZnO photoanode for dye-sensitized solar cell (DSSC) was primarily prepared via a two-step process which involved hydrothermal growth of ZnO nanograss on the fluorine-doped tin oxide (FTO) substrate and subsequently chemisorption of PANI on the surfaces of the ZnO nanorods. The PANI hybridized ZnO nanograss films were characterized by scanning electron microscope (SEM), X-ray diffraction (XRD) and Fourier transform infrared spectra (FT-IR), and the results indicated that there were chemical interactions between PANI and ZnO. Both pure ZnO nanograss and PANI hybridized ZnO nanograss were applied to DSSC. The results of photoelectrochemical measurement showed that the photocurrent density of PANI (100 mg/L) hybridized ZnO nanograss photoanode was significantly enhanced, and the overall light-conversion efficiency increased by 60%. The electrochemical impedance spectra (EIS) displayed that the electron densities in photoanodes of PANI hybridized ZnO nanograss were larger than that in pure ZnO nanograss. This is ascribed to more effective charge separation and faster interfacial charge transferring occurred in the hybrid photoanode. - Graphical abstract: Operational principle of the DSSC: the introduced hybridizing PANI layer performs effective charge separation and faster interfacial charge transferring. Highlights: Black-Right-Pointing-Pointer PANI/ZnO nanograss hybrid materials as photoanode in Dye-sensitized solar cell. Black-Right-Pointing-Pointer Photoelectric conversion efficiency after hybridization was enhanced by 60%. Black-Right-Pointing-Pointer PANI hybridizing ZnO nanograss induced a rapid charge separation.
Zhu Shibu; Wei Wei; Chen Xiangnan [Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu, 610031 (China); Jiang Man, E-mail: email@example.com [Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu, 610031 (China); Zhou Zuowan, E-mail: firstname.lastname@example.com [Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu, 610031 (China)
Investigation of ZnO nanopillars fabrication in a new Thomas Swan close coupled showerhead MOCVD reactor
Self-organized ZnO nanopillars were grown on a-plane Al"2O"3 in a vertical MOCVD reactor using diethylzinc and N"2O as precursors. This is the very first Thomas Swan reactor that is specially designed for the growth of ZnO and GaN. The influence of different ... Keywords: MOCVD, MOVPE, Nanopillars, Zincoxide, ZnO
A. Behrends; A. Bakin; A. Waag
Enhanced electron transport in dye-sensitized solar cells using short ZnO nanotips on a rough metal anode.
Many efforts have been directed toward the enhancement of electron transport in dye-sensitized solar cells (DSSC) using one-dimensional nanoarchitectured semiconductors. However, the improvement resulting from these ordered 1-D nanostructured electrodes is often offset or diminished by the deterioration in other device parameters intrinsically associated with the use of these 1-D nanostructures, such as the two-sided effect of the length of the nanowires impacting the series resistance and roughness factor. In this work, we mitigate this problem by allocating part of the roughness factor to the collecting anode instead of imparting all the roughness factors onto the semiconductor layer attached to the anode. A microscopically rough Zn microtip array is used as an electron-collecting anode on which ZnO nanotips are grown to serve as the semiconductor component of the DSSC. For the same surface roughness factor, our Zn-microtip|ZnO-nanotip DSSC exhibits an enhanced fill factor compared with DSSCs that have ZnO nanowires supported by a planar anode. In addition, the open-circuit voltage of the Zn-microtip|ZnO-nanotip DSSC is also improved due to a favorable band shift at the Zn-ZnO interface, which raises the Fermi level of the semiconductor and consequently enlarges the energy gap between the quasi-Fermi level of ZnO and the redox species. With these improvements, the overall efficiency becomes 1.4% with an open-circuit voltage of 770 mV, while the surface roughness factor of ZnO is approximately 60. Electrochemical impedance spectroscopic study reveals that the electron collection time is much shorter than the electron lifetime, suggesting that fast electron collection occurs in our device due to the significantly reduced electron collection distance along the short ZnO nanotips. The overall improvement demonstrates a new approach to enhance the efficiency of dye-sensitized solar cells.
Yang, Z.; Xu, T.; Ito, Y.; Welp, U.; Kwok, W. K.; Materials Science Division; Northern Illinois Univ.
CdTe Feedstock Development and Validation: Cooperative Research and Development Final Report, CRADA Number CRD-08-00280
The goal of this work was to evaluate different CdTe feedstock formulations (feedstock provided by Redlen) to determine if they would significantly improve CdTe performance with ancillary benefits associated with whether changes in feedstock would affect CdTe cell processing and possibly reliability of cells. Feedstock also included attempts to intentionally dope the CdTe with pre-selected elements.
Albin, D.
Flexible Zn2SnO4/MnO2 Core/Shell Nanocable-Carbon Microfiber ...
Presentation Title, Flexible Zn2SnO4/MnO2 Core/Shell Nanocable-Carbon Microfiber Hybrid Composites for High-Performance Supercapacitor Electrodes.
Charging effects in CdSe nanocrystals embedded in SiO2 matrix produced by rf magnetron sputtering
Charging effects in CdSe nanocrystals embedded in SiO"2 matrix fabricated by rf magnetron co-sputtering technique were electrically characterized by means of capacitance-voltage (C-V) combined with current-voltage (I-V). The presence of CdSe nanocrystals ... Keywords: CdSe, Charging effect, Nanocrystals, SiO2
S. Levichev; A. Chahboun; P. Basa; A. G. Rolo; N. P. Barradas; E. Alves; Zs. J. Horvath; O. Conde; M. J. M. Gomes
Immunosuppressive dietary n-3 polyunsaturated fatty acids differentially modulate costimulatory regulation of murine CD4+ T-cell function
Consumption of fish oils (FO) enriched with the n-3 polyunsaturated fatty acids (PUFA), docosahexaenoic acid (DHA) and eicosapentaenoic acid (EPA), is beneficial to a variety of inflammatory disorders due, in part, to the alteration of membrane composition of T-lymphocytes and other immune cells. We previously observed that down-regulation of proliferation and cytokine synthesis by CD4+ T-cells in mice fed diets rich in n-3 PUFA was dependent on the involvement of CD28, a co-stimulatory molecule necessary for T-cell activation. Since the co-receptor homologues, CD28 and CTLA-4, have opposing effects on T-cell activation, we hypothesized that the balance of costimulatory and downregulatory properties of CD28 and CTLA-4, respectively, would be altered by diet. A significant increase (pCD28 and CTLA-4 surface expression was observed in CD4+ T-cells post-stimulation with phorbol ester and calcium ionophore (PMA/Iono) or anti-CD3 and anti-CD28 (?CD3/CD28) antibodies in all diet groups. A significant increase (pCD28 molecules was observed in n-3 PUFA vs. CO-fed mice after 48 h of in vitro CD4+ T-cell activation, and both CTLA-4 mRNA transcript and protein levels were upregulated by 50% at 72 h post-activation (pCD28. CD4T-cells from C57BL/6 mice fed DHA produced significantly less IFN? and IL-10, while CD4T-cells from IL-10Ligation of CD28 upregulates IL-10 receptor (IL-10R) expression on CD4+ T-cells. Therefore, we hypothesized that dietary n-3 PUFA would suppress T-cell function through the effects of IL-10. Surprisingly, the proliferation of purified splenic CD4+ T-cells activated in vitro with ?CD3/CD28 was suppressed by dietary n-3 PUFA in both conventional mice (C57BL/6) and IL-10 gene knockout (IL-10(-/-)) mice. Furthermore, IL-10R cell surface expression was significantly down-regulated on CD4+ T-cells from both the C67BL/6 and IL-10(-/-) mice fed dietary n-3 PUFA produced significantly more IFN? compared to the CO-fed group.
Ly, Lan H.
Chemically Modified Metal Oxide Nanostructure for Photoelectrochemical Water Splitting
3 Double-sided CdS and CdSe Quantum Dot Co-sensitized ZnO3. �Double-sided CdS and CdSe quantum dot co-sensitized ZnO45 Double-sided CdS and CdSe Quantum Dot Co-sensitized ZnO
Wang, Gongming
Basic research on ceramic materials for energy storage and conversion systems. Progress report, December 1, 1975--November 30, 1976. [Tl/sub 2/ZnI/sub 2/, In/sub 4/CdI/sub 6/, Tl/sub 4/CdI/sub 6/, and In/sub 2/ZnI/sub 4/; solid electrolytes and electrodes
The present research program involves utilizing appropriate experimental probes for measuring the movement of ionic and electronic charge carriers in ceramic materials suitable for solid electrolyte and electrode applications in high-performance, secondary battery and fuel cell systems. Special emphasis is placed on developing: (1) a better understanding of the effects of structure, impurities and composition on charge carrier transport mechanisms in such materials; and (2) detailed knowledge of the kinetics and mechanism of reactions occurring (on a microscopic scale) at the electrode-electrolyte interfaces of energy storage and conversion systems.
Whitmore, D.H.
Highly ordered Zn-doped mesoporous silica: An efficient catalyst for transesterification reaction
Designing highly ordered material with nanoscale periodicity is of great significance in the field of solid state chemistry. Herein, we report the synthesis of highly ordered 2D-hexagonal mesoporous zinc-doped silica using a mixture of anionic and cationic surfactants under hydrothermal conditions. Powder XRD, N{sub 2} sorption, TEM analysis revealed highly ordered 2D-hexagonal arrangements of the pores with very good surface area (762 m{sup 2} g{sup -1}) in this Zn-rich mesoporous material. Chemical analysis shows very high loading of zinc (ca. 12.0 wt%) in the material together with retention of hexagonal pore structure. Interestingly, high temperature calcination resulted into zinc silicate phase, unlike any ZnO phase, which otherwise is expected under heat treatments. High surface area together with Zn loading in this mesoporous material has been found useful for the catalytic activity of the materials in the acid-catalyzed transesterification reactions of various esters under mild liquid phase conditions. - Graphical abstract: Zn-rich 2D-hexagonal mesoporous materials are synthesized hydrothermally, which show very good catalytic activity in the transesterification reaction under mild liquid phase reaction conditions. Highlights: > Zn-rich 2D-hexagonal mesoporous silica. > High surface area material. > Efficient catalyst in liquid phase transesterification reaction. > Biodiesel production.
Pal, Nabanita; Paul, Manidipa [Department of Materials Science, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032 (India); Bhaumik, Asim, E-mail: firstname.lastname@example.com [Department of Materials Science, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032 (India)
Effects of Hydrogen Content in Sputtering Ambient on ZnO:A1 Electrical Properties
ZnO-based transparent conducting oxide (TCO) thin films have received increased attention recently because of their potential to reduce production costs compared to those of the prevalent TCO indium tin oxide (ITO). Undoped ZnO and ZnO:Al (0.1, 0.2, 0.5, 1, and 2 wt% Al2O3) polycrystalline films were deposited by RF magnetron sputtering. Controlled incorporation of H2 and O2 in the Ar sputtering ambient was investigated. Though optimal substrate temperature was found to be 200 C for films grown in 100% Ar, the addition of H2 permits improved electrical performance for room-temperature depositions. Temperature-dependent Hall data suggest that ionized impurity and acoustic phonon scattering dominate at high and intermediate carrier concentration levels, respectively, with evidence of temperature-activated transport at the lowest levels. Lightly doped ZnO:Al demonstrates reduced infrared absorption compared to the standard 2 wt%-doped ZnO:Al, which may be beneficial to device performance.
Duenow, J. N.; Gessert, T. A.; Wood, D. M.; Young, D. L.; Coutts, T. J.
Genomic structure and chromosomal mapping of the human CD22 gene
The human CD22 gene is expressed specifically in B lymphocytes and likely has an important function in cell-cell interactions. A nearly full length human CD22 cDNA clone was used to isolate genomic clones that span the CD22 gene. The CD22 gene is spread over 22 kb of DNA and is composed of 15 exons. The first exon contains the major transcriptional start sites. The translation initiation codon is located in exon 3, which also encodes a portion of the signal peptide. Exons 4 to 10 encode the seven Ig domains of CD22, exon 11 encodes the transmembrane domain, exons 12 to 15 encode the intracytoplasmic domain of CD22, and exon 15 also contains the 3' untranslated region. A minor form of CD22 mRNA likely results from splicing of exon 5 to exon 8, skipping exons 6 and 7. A 4.6-kb Xbal fragment of the CD22 gene was used to map the chromosomal location of CD22 by fluorescence in situ hybridization. The hybridization locus was identified by combining fluorescent images of the probe with the chromosomal banding pattern generated by an Alu probe. The results demonstrate the CD22 is located within the band region q13.1 of chromosome 19. Two closely clustered major transcription start sites and several minor start sites were mapped by primer extension. Similarly to many other lymphoid-specific genes, the CD22 promoter lacks an obvious TATA box. Approximately 4 kb of DNA 5' of the transcription start sites were sequenced and found to contain multiple Alu elements. Potential binding sites for the transcriptional factors NF-kB, AP-1, and Oct-2 are located within 300 bp 5' of the major transcription start sites. A 400-bp fragment (bp -339 through +71) of the CD22 promoter region was subcloned into a pGEM-chloramphenicol acetyltransferase vector and after transfection into B and T cells was found to be active in both B and T cells. 45 refs., 7 figs., 2 tabs.
Wilson, G.L.; Kozlow, E.; Kehrl, J.H. (National Institutes of Health, Bethesda, MD (United States)); Najfeld, V. (Mount Sinai Medical Center, New York, NY (United States)); Menniger, J.; Ward, D. (Yale School of Medicine, New Haven, CT (United States))
An oleic acid-capped CdSe quantum-dot sensitized solar cell
In this letter, we report an oleic acid (OA)-capped CdSe quantum-dot sensitized solar cell (QDSSC) with an improved performance. The TiO{sub 2}/OA-CdSe photoanode in a two-electrode device exhibited a photon-to-current conversion efficiency of 17.5% at 400 nm. At AM1.5G irradiation with 100 mW/cm{sup 2} light intensity, the QDSSCs based on OA-capped CdSe showed a power conversion efficiency of about 1%. The function of OA was to increase QD loading, extend the absorption range and possibly suppress the surface recombination.
Chen Jing [School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China); School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Song, J. L.; Deng, W. Q. [Division of Chemistry and Biological Chemistry, School of Physical and Mathematical Science, Nanyang Technological University, Singapore 637616 (Singapore); Sun, X. W. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); Jiang, C. Y. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); Lei, W. [School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China); Huang, J. H.; Liu, R. S. [Department of Chemistry, National Taiwan University, Taipei 106, Taiwan (China)
Chapter 1.19: Cadmium Telluride Photovoltaic Thin Film: CdTe
The chapter reviews the history, development, and present processes used to fabricate thin-film, CdTe-based photovoltaic (PV) devices. It is intended for readers who are generally familiar with the operation and material aspects of PV devices but desire a deeper understanding of the process sequences used in CdTe PV technology. The discussion identifies why certain processes may have commercial production advantages and how the various process steps can interact with each other to affect device performance and reliability. The chapter concludes with a discussion of considerations of large-area CdTe PV deployment including issues related to material availability and energy-payback time.
Thin-film CdTe and CuInSe{sub 2} photovoltaic technologies
Total-area conversion efficiency of 15%--15.8% have been achieved for thin-film CdTe and CIS solar cells. Modules with power output of 5--53 W have been demonstrated by several groups world-wide. Critical processes and reaction pathways for achieving excellent PV devices have been eluciated. Research, development and technical issues have been identified, which could result in potential improvements in device and module performance. A 1-kW thin-film CdTe array has been installed and is being tested. Multimegawatt thin-film CdTe manufacturing plants are expected to be completed in 1-2 years.
Ullal, H.S.; Zweibel, K.; von Roedern, B.G.
XPS and AES Studies of Cu/CdTe(111)-B
Copper is frequently used as a p-type dopant to improve the performance of back contacts in CdTe thin-film solar cells. In this study, surface-analysis techniques are used to probe fundamental interactions between Cu and the CdTe(111)-B surface. The results presented here were facilitated by the newly constructed surface-analysis cluster tool in the Measurements and Characterization Division at NREL; they reveal a host of fundamental phenomena that occur in the Cu/CdTe system.
Teeter, G.; Gessert, T. A.; Asher, S. E.
Field emission behavior of vertically aligned ZnO nanowire planar cathodes
A field emission (FE) study by scanning anode field emission microscopy was performed to evaluate the FE properties of vertically aligned zinc oxide (ZnO) nanowire arrays electrodeposited on a plane conductive surface. The specific FE behaviors of the cathode observed experimentally are (1) a turn-on macroscopic field of about 6 V/{mu}m for a FE current density J{sub FE} 5 x 10{sup -4} A/cm{sup 2}, (2) a stable FE characteristics for 5 x 10{sup -4} Fowler-Nordheim plot and the presence of a Zn enriched surface was assumed in considering the possibility of important modifications of the crystallography and charge transfers at the surface of ZnO nanowires during the application of the strong electric field required for FE.
Semet, V.; Binh, Vu Thien [University of Lyon 1, Equipe Emission Electronique, LPMCN - UMR CNRS, Villeurbanne 69622 (France); Pauporte, Th. [LECIME, UMR7575, ENSCP-CNRS, 11 rue P. et M. Curie, 75231 Paris Cedex 05 (France); Joulaud, L.; Vermersch, F. J. [Saint Gobain Recherche, Aubervilliers 93303 (France)
Characteristics of Dispersed ZnO-Folic acid Conjugate in Aqueous Medium
The focus of this article is based on the aqueous dispersed state properties of inorganic ZnO nanoparticles (average size lessthan or equal to 4 nm), their surface modification and bio-functionalization with folic acid at physiological pH ~ 7.5, suitable for bio-imaging and targeted therapeutic application. While TEM studies of the ZnO nano-crystallites have been performed to estimate their size and morphology in dry state, the band gap properties of the freshly prepared samples, the hydrodynamic size in aqueous solution phase and the wide fluorescence range in visible region have been investigated to establish the fact that the sol is particularly suitable for the bio-medical purpose in the aqueous dispersed state. Key words: ZnO nanoparticle; folic acid; band gap; hydrodynamic size; fluorescence.
Sreetama Dutta; Bichitra Nandi Ganguly
High performance thin film transistor with cosputtered amorphous Zn-In-Sn-O channel: Combinatorial approach
Thin film transistors with a channel of Zn-In-Sn-O were fabricated via a combinatorial rf sputtering method. It was found that the role of the In atoms is to enhance the mobility and to shift the threshold voltage (V{sub th}) negatively. On the other hand, the Sn fraction is critical for improving the overall trap density including the density-of-states of the bulk channel layer and the interfacial trap density at the ZnInSnO interface. The optimized transistor was obtained at a compositional ratio of Zn:In:Sn=40:20:40, which exhibited an excellent subthreshold gate swing of 0.12 V/decade, V{sub th} of -0.4 V, and high I{sub on/off} ratio of >10{sup 9} as well as a high field-effect mobility of 24.6 cm{sup 2}/V s.
Ryu, Min Ki; Yang, Shinhyuk; Park, Sang-Hee Ko; Hwang, Chi-Sun [Transparent Electronics Team, ETRI, Daejeon 305-700 (Korea, Republic of); Jeong, Jae Kyeong [Department of Materials Science and Engineering, Inha University, 253 Yonghyun-Dong, Nam-Gu, Incheon 402-751 (Korea, Republic of)
Band offsets in HfO{sub 2}/InGaZnO{sub 4} heterojunctions
The valence band discontinuity ({Delta}E{sub V}) of sputter deposited HfO{sub 2}/InZnGaO{sub 4} (IGZO) heterostructures was obtained from x-ray photoelectron spectroscopy measurements. The HfO{sub 2} exhibited a bandgap of 6.07 eV from absorption measurements. A value of {Delta}E{sub V} = 0.48 {+-} 0.025 eV was obtained by using the Ga 2p{sub 3/2}, Zn 2p{sub 3/2}, and In 3d{sub 5/2} energy levels as references. This implies a conduction band offset {Delta}E{sub C} of 2.39 eV in HfO{sub 2}/InGaZnO{sub 4} heterostructures and a nested interface band alignment.
Cho, Hyun [Department of Nanomechatronics Engineering, Pusan National University, Gyeongnam 627-706 (Korea, Republic of); Douglas, E. A.; Gila, B. P.; Craciun, V.; Lambers, E. S.; Pearton, S. J. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Ren Fan [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)
Optical Properties of MEH-PPV Thin Films Containing ZnO Nanoparticles
Thin films of poly [2-methoxy-5(2'-ethyl hexyloxy)-phenylene vinylene](MEH-PPV) containing different weight percent of ZnO nanoparticles were deposited by spin coating from THF solutions and their optical properties were investigated. Optical characterization of the nanocomposite thin films were performed by Ultraviolet-Visible Spectrophotometer (UV-Vis) and Photoluminescence Spectrometer while the thickness of the thin films was measured by using Surface Profiler. The UV-Vis absorption spectra of MEH-PPV: ZnO films showed a small red shift as compared with pure MEH-PPV. Similarly, a small red shift was found in PL emission spectra with increasing the content of ZnO nanoparticles.
Zayana, N. Y. [NANO-SciTech Center (NST), Institute of Science, Universiti Teknologi MARA, 40450 Shah Alam (Malaysia); Shariffudin, S. S. [NANO- ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam (Malaysia); Jumali, N. S.; Shaameri, Z.; Hamzah, A. S. [Organic Synthesis Research Laboratory, Institute of Science, Universiti Teknologi MARA, 40450 Shah Alam (Malaysia); Rusop, M. [NANO-SciTech Center (NST), Institute of Science, Universiti Teknologi MARA, 40450 Shah Alam (Malaysia); NANO- ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam (Malaysia)
Growth study of nonpolar Zn{sub 1-x}Mg{sub x}O epitaxial films on a-plane bulk ZnO by plasma-assisted molecular beam epitaxy
Nonpolar Zn{sub 1-x}Mg{sub x}O epitaxial films were grown by plasma-assisted molecular beam epitaxy on a-plane ZnO substrates. A smooth surface morphology was accomplished under oxygen-rich growth conditions. The benefits of the use of ZnO substrates on the structural properties are reflected by a low-density of threading dislocations. Furthermore, no indications for the generation of basal plane stacking faults are found. The pseudomorphic growth on a-plane ZnO substrates efficiently locks the epitaxial Zn{sub 1-x}Mg{sub x}O films to the wurtzite structure up to x = 0.25. The Mg concentration is not constant and increases with larger thickness. The optical properties reflect the influence of alloy disorder.
Laumer, Bernhard [Walter Schottky Institut and Physics Department, Technische Universitaet Muenchen, Am Coulombwall 4, 85748 Garching (Germany); I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Heinrich-Buff-Ring 16, 35392 Giessen (Germany); Schuster, Fabian; Stutzmann, Martin [Walter Schottky Institut and Physics Department, Technische Universitaet Muenchen, Am Coulombwall 4, 85748 Garching (Germany); Bergmaier, Andreas; Dollinger, Guenther [Universitaet der Bundeswehr Muenchen, Fakultaet fuer Luft- und Raumfahrttechnik, Werner-Heisenberg-Weg 39, 85577 Neubiberg (Germany); Vogel, Stephen; Gries, Katharina I.; Volz, Kerstin [Philipps-Universitaet, Material Sciences Center-Structure and Technology Research Laboratory and Faculty of Physics, Hans-Meerwein-Strasse, 35032 Marburg (Germany); Eickhoff, Martin [I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Heinrich-Buff-Ring 16, 35392 Giessen (Germany)
Preparation and properties of evaporated CdTe films compared with single-crystal CdTe. Progress report no. 6, February 1, 1982-April 30, 1982
Films of n-type CdTe:In have been deposited by hot-wall vacuum evaporation (HWVE) on 7059 glass substrates, BaF/sub 2/ single crystal substrates, metal (Pt, Cr, Mo, Al) coated glass substrates, and single crystal p-type CdTe substrates. Films deposited on 7059 glass show typically a dark resistivity of 2 x 10/sup 5/ ohm-cm and a light resistivity of 3 x 10/sup 2/ ohm-cm. With increasing In source temperature, the resistivity decreases, but actually increases slightly again if the T/sub In/ is raised above 600/sup 0/C. Photoexcitation increases the electron density but does not affect the electron mobility. It appears that the grains are depleted in the dark. Films deposited on BaF/sup 2/ show dark resistivity of about 5 ohm-cm and light resistivity of about 2 ohm-cm, corresponding to electron densities of about 3 x 10/sup 16/ cm/sup -3/ and electron mobilities of about 30 cm/sup 2//V-sec. For doping levels abpove 10/sup 16/ cm/sup -3/ photoexcitation increases the mobility, but not the electron density; it appears that the grains are not depleted in the dark in this case. Cr coated 7059 glass makes an ohmic contact to n-type CdTe films. A Schottky diode formed with a 100A thick Au layer showed V/sub oc/ = 0.46 V, J/sub sc/ = 9 mA/cm/sup 2/ and a solar efficiency of about 2%. An n/p homojunction device was made by HWVE deposition of a 1.5 ..mu..m thick n-type CdTe layer on a p-type CdTe single crystal substrate. Values of V/sub oc/ = 0.73 V and J/sub sc/ = 0.24 mA/cm/sup 2/ were obtained. Grain boundary investigations showed the additive quality of two independent grain boundaries when measured in series, and tested the effects of passivation by Au, Cu, Li and H/sub 2/ in p-type CdTe grain boundaries, and In in n-type CdTe grain boundaries. Marked decreases in grain boundary resistance were observed after Li diffusion and H/sub 2/ diffusion in p-type CdTe.
Bube, R H
Preparation and properties of evaporated CdTe films compared with single crystal CdTe. Progress report No. 4, August 1-October 31, 1981
The hot-wall vacuum evaporation system is nearly complete and the first films are expected in early December. CdTe homojunction cells were theoretically modelled and to some extent tested experimentally using the n-type CdTe film on p-type CdTe crystal homojunction cells previously deposited at Linz. Modelling emphasizes the known importance of surface recombination velocity for such homojunction cells. The n-type layer on the experimental cell was thinned by etching from 5 micrometers to 1.5 micrometers, with a corresponding increase in short-circuit current from 0.1 to 1 mA/cm/sup 2/. This behavior is as theoretically expected; to obtain a short-circuit current of 11 mA/cm/sup 2/, as required for a 10% cell, requires a thickness of about 0.2 micrometers for a surface recombination velocity of 10/sup 6/ cm/sec and other realistic cell parameters. By doping experiments on single crystal CdTe, it has been shown that the hole density does decrease when the P dopant density is decreased below a critical value in CdTe:P crystals, thus eliminating the possibility that the major acceptors in the P-doped crystals were not P impurity. Attempts to heavily dope CdTe with As were less successful, but this may be due to the use of elemental As as the dopant in this case rather than a compound of the dopant. Cs was shown to be an effective dopant of CdTe and resistivities as low as 0.3 ohm-cm corresponding to hole densities in the low 10/sup 17/ cm/sup -3/ range were obtained. An apparent correlation between the low-temperature barrier height associated with a grain boundary in CdTe and the angle of mismatch between the two grains has been observed. Improved capacitance of grain boundary measurements should yield defect densities.
High-throughput manufacturing of thin-film CdS/CdTe photovoltaic modules. Annual subcontract report, 16 November 1994--15 November 1995
The objectives of this subcontract are to advance Solar Cells, Inc.`s (SCI`s) photovoltaic manufacturing technologies, reduce module production costs, increase module performance, and provide the groundwork for SCI to expand its commercial production capacities. Activities during the second year of the program concentrated on process development, equipment design and testing, quality assurance, and ES and H programs. These efforts broadly addressed the issues of the manufacturing process for producing thin-film monolithic CdS/CdTe photovoltaic modules.
ORNL DAAC BOREAS Follow-On CD-ROM Set, 6 disks
BOREAS Follow-On CD-ROM Set, 6 disks Get Data BOREAS Follow-On ProjectCampaign Document Summary: The Boreal Ecosystem-Atmosphere Study (BOREAS) Follow-on project extended and...
Time resolved fluorescence of CdSe nanocrystals using single molecule spectroscopy
A wide variety of spectroscopic studies of CdSe nanocrystals (NCs) are presented in this thesis, all studying some aspect of the temporal evolution of NC fluorescence tinder different conditions. In particular the methods ...
Fisher, Brent R
Cd1-xMnxTe semimagnetic semiconductors for ultrafast spintronics and magnetooptics
We present ultrafast optical characterization of Cd1-xMnxTe single crystals with high (x>0.5-Mn) concentration, studied by magnetooptical sampling and time-resolved magnetization modulation spectroscopy. We have demonstrated that ...
R. Rey-de-Castro; Daozhi Wang; A. Verevkin; A. Mycielski; R. Sobolewski
CD73 Is Critical for the Resolution of Murine Colonic Inflammation
CD73 is a glycosyl-phosphatidylinositol-(GPI-) linked membrane protein that catalyzes the extracellular dephosphorylation of adenosine monophosphate (AMP) to adenosine. Adenosine is a negative regulator of inflammation and ...
Bynoe, Margaret S.
Characterization of CdTe Nanoparticles Fabricated by Pulsed Electron Deposition Technique at Different Ablation Parameters
Telluride (CdTe) is a front-runner photovoltaic (PV) material because it has already attained efficiencies above 16%. The fabrication of CdTe nanoparticles has aroused considerable interest because of their potential application as active layer in organic/inorganic hybrid solar cells. They can also be used for sensitisation of wide band gap semiconductors. In this work, we explore pulsed electron beam deposition (PED) technique to fabricate CdTe nanoparticles. Two ablation parameters, namely background gas pressure and electron energy were varied to investigate their effects on the nanoparticle formation. AFM and optical transmission measurements indicate that we have fabricated CdTe nanocrystalline films exhibiting quantum confinement effect. These films contain scattered nanoparticles with diameters varying from 40 nm to 500 nm, which contribute to the optical absorption near the bulk bandgap energy. However, increasing the background pressure to 19 mTorr improves the nanocrystalline film uniformity.
Jackson, E.; Aga, R. Jr.; Steigerwald, A.; Ueda, A.; Pan, Z.; Collins, W. E.; Mu, R. [Department of Physics, Fisk University, 1000 17th Ave N, Nashville TN 37208 (United States)
solid was gallium- or indium- oxide because the EGaIn wasCdS Microarrays on Indium Tin Oxide Substrates Appliedpole figure ITO - indium tin oxide RMS � root mean square
Metallic Ferroelectricity and Superconductivity in the Transition Metal Oxide Pyrochlore Cd2Re2O7.
??Single crystalline samples of transition metal oxide Cd2Re2O7, the first superconductor among pyrochlore oxides with general formula A2B2O7 and the first example of �ferroelectric metal�� (more)
He, Jian
Understanding and engineering the photophysics of single CdSe nanocrystals
This thesis focuses on uncovering the photophysics of CdSe semiconductor quantum dots (QDs) at the single QD level, and correlating the phenomenological behavior observed at the single QD level to that observed at the ...
Chung, Inhee, 1976-
ZB/WZ Band Offsets and Carrier Localization in CdTe Solar Cells
Using the first principles band-structure method, we studied systematically the stability and electronic structure of CdX (X=S, Se, and Te) semiconductors with the zinc-blende (ZB) and wurtzite (WZ) crystal structures.
Wei, S.-H.; Zhang, S. B.
Interband and intraband optical studies of CdSe colloidal nanocrystal films
We present results for optical measurements on charged CdSe nanocrystals. The injection of electrons into quantum confined states is confirmed by monitoring changes in the visible and infrared absorption spectra. Interestingly, ...
Toyama, Fumiaki, 1977-
Low-dose Photons Modify CD4+ T Cell Signaling Response to Simulated Solar
Photons Modify CD4+ T Cell Signaling Response to Simulated Solar Photons Modify CD4+ T Cell Signaling Response to Simulated Solar Particle Event Protons Daila Gridley Loma Linda University and Medical Center Abstract Purpose: Astronauts on missions are exposed to low-dose/low-dose (LDR) radiation and could receive high doses during solar particle events (SPE). This study investigated T cell function in response to LDR radiation and simulated SPE (sSPE) protons, alone and in combination. Materials and methods: C57BL/6 mice received LDR γ-radiation (57Co) to a total dose of 0.01 Gray (Gy) at 0.0179 cGy/h, either with or without subsequent exposure to 1.7 Gy simulated SPE (sSPE) protons delivered over 36 h. On days 4 and 21 post-exposure, three functional pathways were studied using negatively isolated/anti-CD3 activated splenic CD4+ T cells:
Modeling and optimization of the growth rate for ZnO thin films using neural networks and genetic algorithms
The process modeling for the growth rate in pulsed laser deposition (PLD)-grown ZnO thin films was investigated using neural networks (NNets) based on the back-propagation (BP) algorithm and the process recipes was optimized via genetic algorithms (GAs). ... Keywords: Genetic algorithms, Neural networks, PLD, Process modeling, ZnO
Young-Don Ko; Pyung Moon; Chang Eun Kim; Moon-Ho Ham; Jae-Min Myoung; Ilgu Yun
Effect of Pre-Aging on the Microstructure and Strength of Supersaturated AlZnMg Alloys Processed by ECAP
Effect of Pre-Aging on the Microstructure and Strength of Supersaturated AlZnMg Alloys Processed email@example.com Keywords: Supersaturated AlZnMg alloys, natural aging, Guinier-Prestion zones, Equal on the effect of the combination of natural aging and severe plastic deformation (SPD) produced by Equal
Gubicza, Jenõ
Effect of solution spray rate on the properties of chemically sprayed ZnO: in thin films
ZnO:In thin filmswere grown from 100 mL of spray solution on glass substrates by chemical spray at Ts = 400�Cusing solution spray rates of 0.5-6.7 mL/min. Zinc acetate and indium(III)chloride were used as Zn and In sources, respectively, ...
Merike Kriisa, Malle Krunks, Erki K�rber, Mart Kukk, Valdek Mikli, Arvo Mere
Characteristics of ZnO nanostructures produced with [DMIm]BF{sub 4} using ultrasonic radiation
Great interests in metallic oxides have emerged because of the promising properties of these materials for various applications such as solar cells and sensors. ZnO nanostructures with different morphologies were successfully synthesized from Zn(CH{sub 3}COO){sub 2} Bullet 2H{sub 2}O, NaOH and room temperature ionic liquid (RTIL) 1-decyl-3-methylimidazolium tetrafluoroborate, [DMIm][BF{sub 4}] with ultrasound irradiation. Parameters such as the effect of sonication time (30, 60 and 90 minutes) and Zn(Ac){sub 2} precursor to [DMIm][BF{sub 4}] ratios of 3:5, 5:5 and 5:3 were investigated. X-ray diffraction patterns revealed that the ZnO nanocrystals were hexagonal zincite crystalline in structure. The band gap energies (E{sub g}) were estimated to be 3.35-3.55 eV from the UV-Visible spectrum. The solution with the highest ratio of Zn was analysed with photoluminescence spectroscopy, which exhibited peaks at 362, 403, 468 and 539 nm, at room temperature. The micrographs of field emission scanning electron microscopy and transmission electron microscopy showed that the synthesis products were spherical (30-60 nm), spindle ({approx}10 Multiplication-Sign 70 nm for width Multiplication-Sign length) and whisker-like (100-200 nm), with their dimensions decreasing systematically with increased sonication time. Chemical compositions were approximated at 1:1 for Zn and O, estimated by electron dispersive x-ray spectrum.
Rahman, I. B. Abdul; Ayob, M. T. M.; Ishak, I. S.; Mohd Lawi, R. L.; Isahak, W. N. R. W.; Hamid, M. H. N. Abd; Othman, N. K.; Radiman, S. [School of Applied Physics, Faculty of Science and Technology (FST), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor Darul Ehsan (Malaysia); School of Chemistry and Food Technology, Faculty of Science and Technology (FST), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor Darul Ehsan (Malaysia); School of Applied Physics, Faculty of Science and Technology (FST), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor Darul Ehsan (Malaysia)
Efficient cw lasing in a Cr{sup 2+}:CdSe crystal
Continuous wave lasing in a Cr{sup 2+}:CdSe crystal is obtained for the first time. The Cr{sup 2+}:CdSe crystal pumped by a 1.908-{mu}m thulium fibre laser generated 1.07 W at 2.623 {mu}m with the quantum slope efficiency with respect to the absorbed power equal to 60%. (letters)
Akimov, V A [Moscow Institute of Physics and Technology (State University), Dolgoprudnyi, Moscow Region (Russian Federation); Kozlovskii, V I; Korostelin, Yu V; Landman, A I; Podmar'kov, Yu P; Skasyrsky, Ya K; Frolov, M P [P.N. Lebedev Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)
Spinel ferrite nanocrystals embedded inside ZnO: magnetic, electronic andmagneto-transport properties
In this paper we show that spinel ferrite nanocrystals (NiFe{sub 2}O{sub 4}, and CoFe{sub 2}O{sub 4}) can be texturally embedded inside a ZnO matrix by ion implantation and post-annealing. The two kinds of ferrites show different magnetic properties, e.g. coercivity and magnetization. Anomalous Hall effect and positive magnetoresistance have been observed. Our study suggests a ferrimagnet/semiconductor hybrid system for potential applications in magneto-electronics. This hybrid system can be tuned by selecting different transition metal ions (from Mn to Zn) to obtain various magnetic and electronic properties.
Zhou, Shengqiang; Potzger, K.; Xu, Qingyu; Kuepper, K.; Talut, G.; Marko, D.; Mucklich, A.; Helm, M.; Fassbender, J.; Arenholz, E.; Schmidt, H.
ZnTe:O phosphor development for x-ray imaging applications
An efficient ZnTe:O x-ray powder phosphor was prepared by a dry synthesis process using gaseous doping and etching medias. The x-ray luminescent properties were evaluated and compared to standard commercial phosphors exhibited an x-ray luminescent efficiency equivalent to 76% of Gd{sub 2}O{sub 2}S:Tb and an equal resolution of 2.5 lines/mm. In addition, the fast decay time, low afterglow, and superior spectral match to conventional charge-coupled devices-indicate that ZnTe:O is a very promising phosphor candidate for x-ray imaging applications.
Kang, Z.T.; Summers, C.J.; Menkara, H.; Wagner, B.K.; Durst, R.; Diawara, Y.; Mednikova, G.; Thorson, T. [Phosphor Technology Center of Excellence, School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245 (United States); Georgia Tech Research Institute, Georgia Institute of Technology, Atlanta, Georgia 30332-0826 (United States); Bruker AXS 5465 East Cheryl Parkway, Madison Wisconson 53711 (United States)
Photoluminescence in Chemical Vapor Deposited ZnS: insight into electronic defects
Photoluminescence spectra taken from chemical vapor deposited (CVD) ZnS are shown to exhibit sub-band-gap emission bands characteristic of isoelectronic oxygen defects. The emission spectra vary spatially with position and orientation with respect to the major axis of CVD growth. These data suggest that a complex set of defects exist in the band gap of CVD ZnS whose structural nature is highly dependent upon local deposition and growth conditions, contributing to inherent heterogeneity in optical behavior throughout the material.
McCloy, John S.; Potter, B.g.
Experimental study of alpha-induced reactions on 64Zn for the astrophysical gamma-process
For the synthesis of the heavy, proton rich isotopes in the astrophysical gamma-process the precise knowledge of alpha-induced cross sections is of high importance. We have initiated a comprehensive study of the 64Zn+alpha system involving the cross section measurement of different reaction channels as well as the elastic scattering at low, astrophysically relevant energies. In this paper the experimental technique and some preliminary results of the 64Zn(alpha,p)67Ga cross section measurement are presented.
Gy. Gy�rky; J. Farkas; Z. Hal�sz; Zs. F�l�p; E. Somorjai; T. Sz�cs; P. Mohr; A. Wallner
Component Overpressure Growth and Characterization of High Resistivity CdTe Crystals for Radiation Detectors
Spectrometer-grade CdTe single crystals with resistivities higher than 10{sup 9} {Omega} cm have been grown by the modified Bridgman method using zone-refined precursor materials (Cd and Te) under a Cd overpressure. The grown CdTe crystals had good charge-transport properties ({mu}{tau}{sub e} = 2 x 10{sup -3} cm{sup 2} V{sup -1}, {mu}{tau}{sub h} = 8 x 10{sup -5} cm{sup 2} V{sup -1}) and significantly reduced Te precipitates compared with crystals grown without Cd overpressure. The crystal growth conditions for the Bridgman system were optimized by computer modeling and simulation, using modified MASTRAPP program, and applied to crystal diameters of 14 mm (0.55'), 38 mm (1.5'), and 76 mm (3'). Details of the CdTe crystal growth operation, structural, electrical, and optical characterization measurements, detector fabrication, and testing using {sup 241}Am (60 keV) and {sup 137}Cs (662 keV) sources are presented.
Mandal, Krishna [EIC Laboratories, Inc.; Kang, Sung Hoon [EIC Laboratories, Inc.; Choi, Michael [EIC Laboratories, Inc.; Wei, Jiuan [State University of New York, Stony Brook; Zheng, Lili [State University of New York, Stony Brook; Zhang, Hui [State University of New York, Stony Brook; Jellison Jr, Gerald Earle [ORNL; Groza, Michael [Fisk University, Nashville, TN; Burger, Arnold [Fisk University, Nashville, TN