Recently, the magneto-optical " and the phase change materials have been competitively developed for the optical memory discs. The latter has been recognized as the promising media due to their direct overwritability and the relatively high signal-to-noise ratio. The as-deposited phase change thin films usually consist of major amorphous state and the minor crystalline state. Therefore, it needs to be uniformly crystalline state prior to creating the amorphous recording marks in the crystalline matrix. The initial complete cxystalline state is made by irradiating continuous laser beams onto the film deposited onto the rotating disk substrate. The laser-induced czystalline state depends on the power of laser source and the linear velocity of the rotating disk. For practical use, it is necessary to find out optimal laser-annealing conditions for initiallizing the as-deposited films into the complete crystalline states. In this work, the phase change GeSbTe films were heat treated with the laser beam ( A 830nm) at a variety of laser powers and linear velocities. The percentage changes in reflectivity (4R) were measured before and after laser beam irradiation on the samples to estimate the structural states of the recording layers. The lattice images of the as-deposited states, laser-induced crystallized states and subsequently recorded amorphous states were also observed with an HREM (High Resolution Electron Microscope).