Monitoring conventional beam-line implanters directly after the implant process is very important to prevent to prevent processing on an implant system that is not working according to its spec. Reworking is very costly and in most cases impossible.
The TePla TWIN Implant monitoring technique uses the well known excitation of thermal waves with subsequent measurement of the change in reflectivity. If an implant dose or energy changes, the resulting signature of crystal damage can be seen from the result of the TWIN measurement.
The system allows different measurement modes for uniformity on monitor wafers or product wafers, the range of measurement covers 10E10 to 5E16 in dose and 1keV to 100 MeV in implant energy.
Different measurement modes allow the user to specifically analyze the entire wafer or a small of it with high resolution, micro-scan with repetitive measurement within a few microns or frequency sweep to determine the best measurement frequency.
Different levels of automation are provided, starting from a simple system for automatic loading of a dedicated wafer size. The wafers will be transferred to the measurement stage by a pick and place robot with vacuum or edge gripping. Customizing the front tool allows to provide a bridging tool for automatic loading of different wafer sizes or a high-end in-line inspection system with edge grip loading, FOUP load port and complete communication to factory host and OHT.
The latest additions include temperature control for chuck and calibration substrate and a software feature to compensate the self-annealing effect at room temperature.