 The source of the low efficiency of amorphous silicon photovoltaics is due largely to the low hole mobility of the material.This low hole mobility has been attributed to many physical aspects of the material, including the presence of dangling bonds (silicon with 3 bonds), floating bonds (silicon with 5 bonds), as well as bond reconfigurations.While much work has been done to control these sources of low mobility, evidence suggests that the multitude of interacting defects may lead to the mobility being inherently limited, as reducing one type of defect leads to formation others.