 On the other hand, the electronic properties as a semiconductor (mainly electron mobility), are adversely affected by the increasing content of carbon in the alloy, due to the increased disorder in the atomic network.Several studies are found in the scientific literature, mainly investigating the effects of deposition parameters on electronic quality, but practical applications of amorphous silicon carbide in commercial devices are still lacking.The density of amorphous Si has been calculated as 4.90×1022 atom/cm3 (2.285 g/cm3) at 300 K. This was done using thin (5 micron) strips of amorphous silicon.