 The metal–oxide–semiconductor field-effect transistor (MOSFET) was invented by Atalla and Kahng at Bell Labs.They fabricated the device in November 1959, and presented it as the "silicon-silicon dioxide field induced surface device" in early 1960.With its high scalability, and much lower power consumption and higher density than bipolar junction transistors, the MOSFET made it possible to build high-density integrated circuits (ICs), allowing the integration of more than 10,000 transistors in a single IC.