 The principle of a field-effect transistor was proposed by Julius Edgar Lilienfeld in 1925.John Bardeen, Walter Brattain and William Shockley invented the first working transistors at Bell Labs, the point-contact transistor in 1947 and the bipolar junction transistor in 1948.The MOSFET (metal-oxide-semiconductor field-effect transistor), also known as the MOS transistor, was later invented by Mohamed Atalla and Dawon Kahng at Bell Labs in 1959, which led to the mass-production of MOS transistors for a wide range of uses.