February 2005: Elpida licenses PRAM technology from Ovonyx September 2005: Samsung announces successful 256 Mbit PRAM array, touts 400 μA programming current October 2005: Intel increases investment in Ovonyx December 2005; Hitachi and Renesas announce 1.5 V PRAM with 100 μA programming current December 2005: Samsung licenses PRAM technology from Ovonyx July 2006: BAE Systems begins selling the first commercial PRAM chip September 2006: Samsung announces 512 Mbit PRAM device October 2006: Intel and STMicroelectronics show a 128 Mbit PRAM chip December 2006: IBM Research Labs demonstrate a prototype 3 by 20 nanometers January 2007: Qimonda licenses PRAM technology from Ovonyx April 2007: Intel's chief technology officer Justin Rattner is set to give the first public demonstration of the company's PRAM (phase-change RAM) technology October 2007: Hynix begins pursuing PRAM by licensing Ovonyx' technology February 2008: Intel and STMicroelectronics announce four-state MLC PRAM and begin shipping samples to customers. December 2008: Numonyx announces mass production 128 Mbit PRAM device to selected customer. June 2009: Samsung's phase-change RAM will go into mass production starting in June September 2009: Samsung announces mass production start of 512 Mbit PRAM device October 2009: Intel and Numonyx announce they have found a way to stack phase-change memory arrays on one die December 2009: Numonyx announces 1 Gb 45 nm product April 2010: Numonyx releases Omneo PRAM Series (P8P and P5Q), both in 90 nm. April 2010: Samsung releases 512Mbit PRAM with 65 nm process, in Multi-Chip-Package. February 2011: Samsung presented 58 nm 1.8V 1Gb PRAM. February 2012: Samsung presented 20 nm 1.8V 8Gb PRAM July 2012: Micron announces availability of Phase-Change Memory for mobile devices - the first PRAM solution in volume production January 2014: Micron withdraws all PCM parts from the market. May 2014: IBM demonstrates combining PCM, conventional NAND, and DRAM on a single controller August 2014: Western Digital demonstrates prototype PCM storage with 3 million I/Os and 1.5 microsecond latency July 2015: Intel and Micron announced 3D Xpoint memory where phase-change alloy is used as a storage part of a memory cell. See also Ferroelectric RAM (FRAM) Magnetoresistive random-access memory (MRAM) Read-mostly memory (RMM) References External links Micron Ovonyx, Inc. Energy Conversion Devices, Inc. Hitachi/Renesas Low-Power PRAM Hewlett-Packard Probe Storage European\Phase Change and Ovonics Symposium BAE C-RAM Radiation-Hardened NVM press release BAE C-RAM Radiation-Hardened NVM data sheet Introduction to PCM by Numonyx (video) Computer memory Emerging technologies Non-volatile random-access memory