Nano-RAM is a proprietary computer memory technology from the company Nantero. It is a type of nonvolatile random-access memory based on the position of carbon nanotubes deposited on a chip-like substrate. In theory, the small size of the nanotubes allows for very high density memories. Nantero also refers to it as NRAM. Technology The first generation Nantero NRAM technology was based on a three-terminal semiconductor device where a third terminal is used to switch the memory cell between memory states. The second generation NRAM technology is based on a two-terminal memory cell. The two-terminal cell has advantages such as a smaller cell size, better scalability to sub-20 nm nodes (see semiconductor device fabrication), and the ability to passivate the memory cell during fabrication. In a non-woven fabric matrix of carbon nanotubes (CNTs), crossed nanotubes can either be touching or slightly separated depending on their position. When touching, the carbon nanotubes are held together by Van der Waals forces. Each NRAM "cell" consists of an interlinked network of CNTs located between two electrodes as illustrated in Figure 1. The CNT fabric is located between two metal electrodes, which is defined and etched by photolithography, and forms the NRAM cell. The NRAM acts as a resistive non-volatile random-access memory (RAM) and can be placed in two or more resistive modes depending on the resistive state of the CNT fabric. When the CNTs are not in contact the resistance state of the fabric is high and represents an "off" or "0" state. When the CNTs are brought into contact, the resistance state of the fabric is low and represents an "on" or "1" state. NRAM acts as a memory because the two resistive states are very stable. In the 0 state, the CNTs (or a portion of them) are not in contact and remain in a separated state due to the stiffness of the CNTs resulting in a high resistance or low current measurement state between the top and bottom electrodes. In the 1 state, the CNTs (or a portion of them) are in contact and remain contacted due to Van der Waals forces between the CNTs, resulting in a low resistance or high current measurement state between the top and bottom electrodes. Note that other sources of resistance such as contact resistance between electrode and CNT can be significant and also need to be considered. To switch the NRAM between states, a