power switching transistors for voltage converter applications. Compared to silicon power transistors gallium nitride HEMTs feature low on-state resistances, and low due to the wide bandgap properties. Gallium nitride power HEMTs are commercially available up to voltages of 200 V-600 V. See also Heterojunction bipolar transistor Heterojunction bipolar transistors can be used for gigahertz applications. References External links Modulation-doped FET Transistor types Microwave technology Terahertz technology Field-effect transistors French inventions Japanese inventions MOSFETs Vietnamese inventions