site is also referred to as the “half-crystal position” and energies are evaluated relative to this position for processes such as adsorption, surface diffusion, and sublimation. The term “half-crystal” comes from the fact that the kink site has half the number of neighboring atoms as an atom in the crystal bulk, regardless of the type of crystal lattice. For example, the formation energy for an adatom—ignoring any crystal relaxation—is calculated by subtracting the energy of an adatom from the energy of the kink atom. This can be understood as the breaking of all of the kink atom’s bonds to remove the atom from the surface and then reforming the adatom interactions. This is equivalent to a kink atom diffusing away from the rest of the step to become a step adatom and then diffusing away from the adjacent step onto the terrace to become an adatom. In the case where all interactions are ignored except for those with nearest neighbors, the formation energy for an adatom would be the following, where is the bond energy in the crystal is given by Equation 2. This can be extended to a variety of situations, such as the formation of an adatom-surface vacancy pair on a terrace, which would involve the removal of a surface atom from the crystal and placing it as an adatom on the terrace. This is described by Equation 3. The energy of sublimation would simply be the energy required to remove an atom from the kink site. This can be envisioned as the surface being disassembled one terrace at a time by removing atoms from the edge of each step, which is the kink position. It has been demonstrated that the application of an external electric field will induce the formation of additional kinks in a surface, which then leads to a faster rate of evaporation from the surface. Temperature dependence of defect coverage The number of adatoms present on a surface is temperature dependent. The relationship between the surface adatom concentration and the temperature at equilibrium is described by equation 4, where n0 is the total number of surface sites per unit area: This can be extended to find the equilibrium concentration of other types of surface point defects as well. To do so, the energy of the defect in question is simply substituted into the above equation in the place of the energy of adatom formation.