Stranski–Krastanov growth (SK growth, also Stransky–Krastanov or 'Stranski–Krastanow') is one of the three primary modes by which thin films grow epitaxially at a crystal surface or interface. Also known as 'layer-plus-island growth', the SK mode follows a two step process: initially, complete films of adsorbates, up to several monolayers thick, grow in a layer-by-layer fashion on a crystal substrate. Beyond a critical layer thickness, which depends on strain and the chemical potential of the deposited film, growth continues through the nucleation and coalescence of adsorbate 'islands'. This growth mechanism was first noted by Ivan Stranski and Lyubomir Krastanov in 1938. It wasn't until 1958 however, in a seminal work by Ernst Bauer published in Zeitschrift für Kristallographie, that the SK, Volmer–Weber, and Frank–van der Merwe mechanisms were systematically classified as the primary thin-film growth processes. Since then, SK growth has been the subject of intense investigation, not only to better understand the complex thermodynamics and kinetics at the core of thin-film formation, but also as a route to fabricating novel nanostructures for application in the microelectronics industry. Modes of thin-film growth The growth of epitaxial (homogeneous or heterogeneous) thin films on a single crystal surface depends critically on the interaction strength between adatoms and the surface. While it is possible to grow epilayers from a liquid solution, most epitaxial growth occurs via a vapor phase technique such as molecular beam epitaxy (MBE). In Volmer–Weber (VW) growth, adatom–adatom interactions are stronger than those of the adatom with the surface, leading to the formation of three-dimensional adatom clusters or islands. Growth of these clusters, along with coarsening, will cause rough multi-layer films to grow on the substrate surface. Antithetically, during Frank–van der Merwe (FM) growth, adatoms attach preferentially to surface sites resulting in atomically smooth, fully formed layers. This layer-by-layer growth is two-dimensional, indicating that complete films form prior to growth of subsequent layers. Stranski–Krastanov growth is an intermediary process characterized by both 2D layer and 3D island growth. Transition from the layer-by-layer to island-based growth occurs at a critical layer thickness which is highly dependent on the chemical and physical properties, such as surface energies and lattice parameters, of the substrate and film. Figure 1 is a schematic representation of the three main growth modes for various surface coverages. Determining the mechanism by which a thin film grows requires consideration of the chemical potentials of the first few deposited layers. A