Professor of Electronic Engineering at Sussex University. The machine used point-contact transistors, made in small quantities by STC and Mullard. These consisted of a single crystal of germanium with two fine wires, resembling the crystal and cat's whisker of the 1920s. These transistors had the useful property that a single transistor could possess two stable states. ... The development of the machine was severely hampered by the unreliability of the transistors. It consumed 150 watts. Metropolitan Vickers Ltd rebuilt the full 200 transistor (& 1300 diode) design in 1956 using junction transistors (for internal use). The IBM 7070 (1958), IBM 7090 (1959), and CDC 1604 (1960) were the first computers (as products for sale) based on transistors. MOSFET (MOS transistor) Building on his silicon surface passivation method, Mohamed Atalla developed the metal–oxide–semiconductor (MOS) process in the late 1950s. He proposed the MOS process could be used to build the first working silicon field-effect transistor (FET), which he began working on building with the help of Dawon Kahng at Bell Labs. The metal–oxide–semiconductor field-effect transistor (MOSFET) was invented by Atalla and Kahng at Bell Labs. They fabricated the device in November 1959, and presented it as the "silicon-silicon dioxide field induced surface device" in early 1960. With its high scalability, and much lower power consumption and higher density than bipolar junction transistors, the MOSFET made it possible to build high-density integrated circuits (ICs), allowing the integration of more than 10,000 transistors in a single IC. The first gallium-arsenide Schottky-gate field-effect transistor (MESFET) was made by Carver Mead and reported in 1966. The first report of a floating-gate MOSFET (FGMOS) was made by Dawon Kahng and Simon Sze in 1967. The MOSFET has since become the most widely manufactured device in history. As of 2018, an estimated total of 13sextillion MOS transistors have been manufactured. PMOS and NMOS There were originally two types of MOSFET logic, PMOS (p-type MOS) and NMOS (n-type MOS). Both types were developed by Atalla and Kahng when they originally invented the MOSFET, fabricating both PMOS and NMOS devices with a 20µm process. CMOS A new type of MOSFET logic, CMOS (complementary MOS), was invented by Chih-Tang Sah and Frank Wanlass at Fairchild Semiconductor, and in February 1963 they published the invention in a research paper. Self-aligned gate The self-aligned gate (silicon-gate) MOSFET transistor was invented by Robert Kerwin, Donald Klein and John Sarace at Bell Labs in