Low-energy electron microscopy, or LEEM, is an analytical surface science technique used to image atomically clean surfaces, atom-surface interactions, and thin (crystalline) films. In LEEM, high-energy electrons (15-20 keV) are emitted from an electron gun, focused using a set of condenser optics, and sent through a magnetic beam deflector (usually 60˚ or 90˚). The “fast” electrons travel through an objective lens and begin decelerating to low energies (1-100 eV) near the sample surface because the sample is held at a potential near that of the gun. The low-energy electrons are now termed “surface-sensitive” and the near-surface sampling depth can be varied by tuning the energy of the incident electrons (difference between the sample and gun potentials minus the work functions of the sample and system). The low-energy elastically backscattered electrons travel back through the objective lens, reaccelerate to the gun voltage (because the objective lens is grounded), and pass through the beam separator again. However, now the electrons travel away from the condenser optics and into the projector lenses. Imaging of the back focal plane of the objective lens into the object plane of the projector lens (using an intermediate lens) produces a diffraction pattern (low-energy electron diffraction, LEED) at the imaging plane and recorded in a number of different ways. The intensity distribution of the diffraction pattern will depend on the periodicity at the sample surface and is a direct result of the wave nature of the electrons. One can produce individual images of the diffraction pattern spot intensities by turning off the intermediate lens and inserting a contrast aperture in the back focal plane of the objective lens (or, in state-of-the-art instruments, in the center of the separator, as chosen by the excitation of the objective lens), thus allowing for real-time observations of dynamic processes at surfaces. Such phenomena include (but are not limited to): tomography, phase transitions, adsorption, reaction, segregation, thin film growth, etching, strain relief, sublimation, and magnetic microstructure. These investigations are only possible because of the accessibility of the sample; allowing for a wide variety of in situ studies over a wide temperature range. LEEM was invented by Ernst Bauer in 1962; however, not fully developed (by Ernst Bauer and Wolfgang Telieps) until 1985. Introduction LEEM differs from conventional electron microscopes in four main ways: The sample must be illuminated on the same side of the imaging optics, i.e. through the objective lens, because samples