a heterostructure InSb/AlInSb has recently been shown to exhibit a robust quantum Hall effect. This approach is studied in order to construct very fast transistors. Bipolar transistors operating at frequencies up to 85 GHz were constructed from indium antimonide in the late 1990s; field-effect transistors operating at over 200 GHz have been reported more recently (Intel/QinetiQ). Some models suggest that terahertz frequencies are achievable with this material. Indium antimonide semiconductor devices are also capable of operating with voltages under 0.5 V, reducing their power requirements. Growth methods InSb can be grown by solidifying a melt from the liquid state (Czochralski process), or epitaxially by liquid phase epitaxy, hot wall epitaxy or molecular beam epitaxy. It can also be grown from organometallic compounds by MOVPE. Device applications Thermal image detectors using photodiodes or photoelectromagnetic detectors Magnetic field sensors using magnetoresistance or the Hall effect Fast transistors (in terms of dynamic switching). This is due to the high carrier mobility of InSb. In some of the detectors of the Infrared Array Camera on the Spitzer Space Telescope References Cited sources External links National Compound Semiconductor Roadmap at the Office of Naval Research Material safety data sheet at University of Texas at Dallas Antimonides Indium compounds III-V semiconductors Infrared sensor materials III-V compounds Zincblende crystal structure