become more of a marketing term that has no relation with actual feature sizes or transistor density (number of transistors per square millimeter). Initially transistor gate length was smaller than that suggested by the process node name (e.g. 350 nm node); however this trend reversed in 2009. For example, Intel's former 10 nm process actually has features (the tips of FinFET fins) with a width of 7 nm, so the Intel 10 nm process is similar in transistor density to TSMC's 7 nm process. GlobalFoundries' 12 and 14 nm processes have similar feature sizes. History 20th century An improved type of MOSFET technology, CMOS, was developed by Chih-Tang Sah and Frank Wanlass at Fairchild Semiconductor in 1963. CMOS was commercialised by RCA in the late 1960s. RCA commercially used CMOS for its 4000-series integrated circuits in 1968, starting with a 20µm process before gradually scaling to a 10 µm process over the next several years. Semiconductor device manufacturing has since spread from Texas and California in the 1960s to the rest of the world, including Asia, Europe, and the Middle East. 21st century The semiconductor industry is a global business today. The leading semiconductor manufacturers typically have facilities all over the world. Samsung Electronics, the world's largest manufacturer of semiconductors, has facilities in South Korea and the US. Intel, the second-largest manufacturer, has facilities in Europe and Asia as well as the US. TSMC, the world's largest pure play foundry, has facilities in Taiwan, China, Singapore, and the US. Qualcomm and Broadcom are among the biggest fabless semiconductor companies, outsourcing their production to companies like TSMC. They also have facilities spread in different countries. Since 2009, "node" has become a commercial name for marketing purposes that indicates new generations of process technologies, without any relation to gate length, metal pitch or gate pitch. For example, GlobalFoundries' 7 nm process is similar to Intel's 10 nm process, thus the conventional notion of a process node has become blurred. Additionally, TSMC and Samsung's 10 nm processes are only slightly denser than Intel's 14 nm in transistor density. They are actually much closer to Intel's 14 nm process than they are to Intel's 10 nm process (e.g. Samsung's 10 nm processes' fin pitch is the exact same as that of Intel's 14 nm process: 42 nm). As of 2019, 14 nanometer and 10 nanometer chips are in mass production by Intel, UMC, TSMC,