1771 by Carl Wilhelm Scheele by dissolving silica in hydrofluoric acid. In 1823 for the first time Jacob Berzelius discovered silicon tetrachloride (SiCl4). In 1846 Von Ebelman's had synthesized Tetraethyl orthosilicate (Si(OC2H5)4). Silicon in its more common crystalline form was not prepared until 31 years later, by Deville. By electrolyzing a mixture of sodium chloride and aluminium chloride containing approximately 10% silicon, he was able to obtain a slightly impure allotrope of silicon in 1854. Later, more cost-effective methods have been developed to isolate several allotrope forms, the most recent being silicene in 2010. Meanwhile, research on the chemistry of silicon continued; Friedrich Wöhler discovered the first volatile hydrides of silicon, synthesising trichlorosilane in 1857 and silane itself in 1858, but a detailed investigation of the silanes was only carried out in the early 20th century by Alfred Stock, despite early speculation on the matter dating as far back as the beginnings of synthetic organic chemistry in the 1830s. Similarly, the first organosilicon compound, tetraethylsilane, was synthesised by Charles Friedel and James Crafts in 1863, but detailed characterisation of organosilicon chemistry was only done in the early 20th century by Frederic Kipping. Starting in the 1920s, the work of William Lawrence Bragg on X-ray crystallography elucidated the compositions of the silicates, which had previously been known from analytical chemistry but had not yet been understood, together with Linus Pauling's development of crystal chemistry and Victor Goldschmidt's development of geochemistry. The middle of the 20th century saw the development of the chemistry and industrial use of siloxanes and the growing use of silicone polymers, elastomers, and resins. In the late 20th century, the complexity of the crystal chemistry of silicides was mapped, along with the solid-state physics of doped semiconductors. Silicon semiconductors The first semiconductor devices did not use silicon, but used galena, including German physicist Ferdinand Braun's crystal detector in 1874 and Indian physicist Jagadish Chandra Bose's radio crystal detector in 1901. The first silicon semiconductor device was a silicon radio crystal detector, developed by American engineer Greenleaf Whittier Pickard in 1906. In 1940, Russell Ohl discovered the p–n junction and photovoltaic effects in silicon. In 1941, techniques for producing high-purity germanium and silicon crystals were developed for radar microwave detector crystals during World War II. In 1947, physicist William Shockley theorized a field-effect amplifier made from germanium and silicon, but he failed to build a working device, before eventually