formed upon compression or heating, followed by quenching to ambient conditions. For example, compressing the usual monoclinic samarium diiodide and releasing the pressure results in a PbCl2-type orthorhombic structure (density 5.90 g/cm3), and similar treatment results in a new phase of samarium triiodide (density 5.97 g/cm3). Borides Sintering powders of samarium oxide and boron, in vacuum, yields a powder containing several samarium boride phases, and their volume ratio can be controlled through the mixing proportion. The powder can be converted into larger crystals of a certain samarium boride using arc melting or zone melting techniques, relying on the different melting/crystallization temperature of SmB6 (2580 °C), SmB4 (about 2300 °C) and SmB66 (2150 °C). All these materials are hard, brittle, dark-gray solids with the hardness increasing with the boron content. Samarium diboride is too volatile to be produced with these methods and requires high pressure (about 65 kbar) and low temperatures between 1140 and 1240 °C to stabilize its growth. Increasing the temperature results in the preferential formations of SmB6. Samarium hexaboride Samarium hexaboride is a typical intermediate-valence compound where samarium is present both as Sm2+ and Sm3+ ions in a 3:7 ratio. It belongs to a class of Kondo insulators, that is at high temperatures (above 50 K), its properties are typical of a Kondo metal, with metallic electrical conductivity characterized by strong electron scattering, whereas at low temperatures, it behaves as a non-magnetic insulator with a narrow band gap of about 4–14 meV. The cooling-induced metal-insulator transition in SmB6 is accompanied by a sharp increase in the thermal conductivity, peaking at about 15 K. The reason for this increase is that electrons themselves do not contribute to the thermal conductivity at low temperatures, which is dominated by phonons, but the decrease in electron concentration reduced the rate of electron-phonon scattering. New research seems to show that it may be a topological insulator. Other inorganic compounds Samarium carbides are prepared by melting a graphite-metal mixture in an inert atmosphere. After the synthesis, they are unstable in air and are studied also under inert atmosphere. Samarium monophosphide SmP is a semiconductor with the bandgap of 1.10 eV, the same as in silicon, and high electrical conductivity of n-type. It can be prepared by annealing at an evacuated quartz ampoule containing mixed powders of phosphorus and samarium. Phosphorus is highly volatile at high temperatures and may explode, thus the heating rate has