a detrimental iron diffusion into the absorber. Also uncontrolled sodium diffusion from the glass substrate can be stopped by a barrier before intentionally doping the absorber with the desired amount of sodium. Al2O3 layers deposited by spray-pyrolysis result in fully functioning barrier layers for the cases stated above ZnO Window layers: high quality i-ZnO window layers have been grown by spray pyrolysis and constitute a feasible replacement of the standard sputtered i-ZnO layers. Chalcopyrite absorber layers: Spray-ILGAR is a low temperature technique that enables the growth of chalcopyrite absorber layers such as CuInS2 and . Spray-ILGAR CuInS2 layers can be used as absorbers in thin-film solar cells. Surface Coating: The surface coating of ceramics, metal, glass and even plastics for catalytic purposes as well as anti-corrosion, antistatic or mechanical protection is feasible using the ILGAR technique. ILGAR as a replacement for chemical bath deposition The advantage of ILGAR compared to chemical bath deposition (CBD) lies in the fact that it is easier to deposit high quality precursor layers and convert them to the chalcogenide than to directly deposit chalcogenide thin films. It is also possible to grow films with graded properties or compositions by changing the precursors or the process parameters. Furthermore, ILGAR is an in-line process whereas chemical bath deposition is intrinsically a batch process. References Semiconductor device fabrication Thin film deposition Coatings