Graphics Double Data Rate 5 Synchronous Dynamic Random-Access Memory (GDDR5 SDRAM) is a type of synchronous graphics random-access memory (SGRAM) with a high bandwidth ("double data rate") interface designed for use in graphics cards, game consoles, and high-performance computing. It is a type of GDDR SDRAM (graphics DDR SDRAM). Overview Like its predecessor, GDDR4, GDDR5 is based on DDR3 SDRAM memory, which has double the data lines compared to DDR2 SDRAM. GDDR5 also uses 8-bit wide prefetch buffers similar to GDDR4 and DDR3 SDRAM. GDDR5 SGRAM conforms to the standards which were set out in the GDDR5 specification by the JEDEC. SGRAM is single-ported. However, it can open two memory pages at once, which simulates the dual-port nature of other VRAM technologies. It uses an 8N-prefetch architecture and DDR interface to achieve high performance operation and can be configured to operate in ×32 mode or ×16 (clamshell) mode which is detected during device initialization. The GDDR5 interface transfers two 32-bit wide data words per write clock (WCK) cycle to/from the I/O pins. Corresponding to the 8N-prefetch, a single write or read access consists of a 256-bit wide two CK clock cycle data transfer at the internal memory core and eight corresponding 32-bit wide one-half WCK clock cycle data transfers at the I/O pins. GDDR5 operates with two different clock types. A differential command clock (CK) as a reference for address and command inputs, and a forwarded differential write clock (WCK) as a reference for data reads and writes, that runs at twice the CK frequency. Being more precise, the GDDR5 SGRAM uses a total of three clocks: two write clocks associated with two bytes (WCK01 and WCK23) and a single command clock (CK). Taking a GDDR5 with 5 Gbit/s data rate per pin as an example, the CK runs with 1.25 GHz and both WCK clocks at 2.5 GHz. The CK and WCKs are phase aligned during the initialization and training sequence. This alignment allows read and write access with minimum latency. A single 32-bit GDDR5 chip has about 67 signal pins and the rest are power and grounds in the 170 BGA package. Commercialization of GDDR5 GDDR5 was revealed by Samsung Electronics in July 2007. They announced that they would mass-produce GDDR5 starting in January 2008. Hynix Semiconductor introduced the industry's first 60 nm class "1 Gb" (10243 bit) GDDR5 memory in 2007. It supported a bandwidth of 20