Catastrophic optical damage (COD), or catastrophic optical mirror damage (COMD), is a failure mode of high-power semiconductor lasers. It occurs when the semiconductor junction is overloaded by exceeding its power density and absorbs too much of the produced light energy, leading to melting and recrystallization of the semiconductor material at the facets of the laser. This is often colloquially referred to as "blowing the diode." The affected area contains a large number of lattice defects, negatively affecting its performance. If the affected area is sufficiently large, it can be observable under optical microscope as darkening of the laser facet, and/or as presence of cracks and grooves. The damage can occur within a single laser pulse, in less than a millisecond. The time to COD is inversely proportional to the power density. Catastrophic optical damage is one of the limiting factors in increasing performance of semiconductor lasers. It is the primary failure mode for AlGaInP/AlGaAs red lasers. Short-wavelength lasers are more susceptible to COD than long-wavelength ones. The typical values for COD in industrial products range between 12 and 20 MW/cm2. Causes and mechanisms At the edge of a diode laser, where light is emitted, a mirror is traditionally formed by cleaving the semiconductor wafer to form a specularly reflecting plane. This approach is facilitated by the weakness of the [110] crystallographic plane in III-V semiconductor crystals (such as GaAs, InP, GaSb, etc.) compared to other planes. A scratch made at the edge of the wafer and a slight bending force causes a nearly atomically perfect mirror-like cleavage plane to form and propagate in a straight line across the wafer. But it so happens that the atomic states at the cleavage plane are altered (compared to their bulk properties within the crystal) by the termination of the perfectly periodic lattice at that plane. Surface states at the cleaved plane have energy levels within the (otherwise forbidden) band gap of the semiconductor. The absorbed light causes generation of electron-hole pairs. These can lead to breaking of chemical bonds on the crystal surface followed by oxidation, or to release of heat by nonradiative recombination. The oxidized surface then shows increased absorption of the laser light, which further accelerates its degradation. The oxidation is especially problematic for semiconductor layers containing aluminium. Essentially, as a result when light propagates through the cleavage plane and transits to free space from within the semiconductor crystal, a fraction