for 100 000 switching cycles. Retention tests showed good stability and the devices are reproducible. Memory operating mechanism is proposed based on charge trapping in quantum dots with AlOx acting as barrier. This mechanism is supported by marked variation in capacitance value in ON and OFF states. ReRam test boards Panasonic AM13L-STK2 : MN101LR05D 8-bit MCU with built in ReRAM for evaluation, connector Future applications Compared to PRAM, ReRAM operates at a faster timescale (switching time can be less than 10 ns), while compared to MRAM, it has a simpler, smaller cell structure (less than 8F² MIM stack). A vertical 1D1R (one diode, one resistive switching device) integration can be used for crossbar memory structure to reduce the unit cell size to 4F² (F is the feature dimension). Compared to flash memory and racetrack memory, a lower voltage is sufficient, and hence it can be used in low-power applications. ITRI has shown that ReRAM is scalable below 30 nm. The motion of oxygen atoms is a key phenomenon for oxide-based ReRAM; one study indicated that oxygen motion may take place in regions as small as 2 nm. It is believed that if a filament is responsible, it would not exhibit direct scaling with cell size. Instead, the current compliance limit (set by an outside resistor, for example) could define the current-carrying capacity of the filament. A significant hurdle to realizing the potential of ReRAM is the sneak path problem that occurs in larger passive arrays. In 2010, complementary resistive switching (CRS) was introduced as a possible solution to sneak-path current interference. In the CRS approach, the information storing states are pairs of high- and low-resistance states (HRS/LRS and LRS/HRS) so that the overall resistance is always high, allowing larger passive crossbar arrays. A drawback to the initial CRS solution is the requirement for switching endurance caused by conventional destructive readout based on current measurements. A new approach for a nondestructive readout based on capacity measurement potentially lowers the requirements for both material endurance and power consumption. Bi-layer structure is used to produce the nonlinearity in LRS to avoid the sneak path problem. A single-layer device exhibiting a strong nonlinear conduction in LRS was reported. Another bi-layer structure was introduced for bipolar ReRAM to improve the HRS and stability. Another solution to the sneak current issue is to perform read and reset operations in parallel across an entire row of cells,