with silicon (Si), enabling the use of hetero structures and multiple quantum wells in the design and structure of more efficient p-n junction light emitting structures. They achieved stimulated emission from the GaN firstly at room temperature in 1990, and developed in 1995 the stimulated emission at 388 nm with pulsed current injection from high-quality AlGaN/GaN/GaInN quantum well device. They verified quantum size effect (1991) and quantum confined Stark effect (1997) in nitride system, and in 2000 showed theoretically the orientation dependence of piezoelectric field and the existence of non-/semi-polar GaN crystals, which have triggered today's worldwide efforts to grow those crystals for application to more efficient light emitters. Nagoya University Akasaki Institute Akasaki's patents were produced from these inventions, and the patents have been rewarded as royalties. Nagoya University Akasaki Institute opened on October 20, 2006. The cost of construction of the institute was covered with the patent royalty income to the university, which was also used for a wide range of activities in Nagoya University. The institute consists of an LED gallery to display the history of blue LED research/developments and applications, an office for research collaboration, laboratories for innovative research, and Akasaki's office on the top sixth floor. The institute is situated in the center of the collaboration research zone in Nagoya University Higashiyama campus. Professional record Akasaki worked as a Research Scientist from 1952 to 1959 at Kobe Kogyo Corporation (now, Fujitsu Ltd.). In 1959 he was a research associate, assistant professor, and associate professor at the Department of Electronics at Nagoya University until 1964. Later in 1964, he was the Head of Basic Research Laboratory at Matsushita Research Institute Tokyo, Inc. until 1974 to later become a General Manager of Semiconductor Department (in the same institute until 1981). In 1981 he became a professor in the Department of Electronics at Nagoya University until 1992. From 1987 to 1990 he was a Project Leader of "Research and Development of GaN-based Blue Light–Emitting Diode" sponsored by Japan Science and Technology Agency (JST). He then led the "Research and Development of GaN-based Short-Wavelength Semiconductor Laser Diode" product sponsored by JST from 1993 to 1999. While he led this project, he was also a visiting professor at the Research Center for Interface Quantum Electronics at Hokkaido University, from 1995 to 1996. In 1996 he was a Project Leader of the Japan Society for the Promotion of Science's for the