Maskless lithography (MPL) is a photomask-less photolithography-like technology used to project or focal-spot write the image pattern onto a chemical resist-coated substrate (e.g. wafer) by means of UV radiation or electron beam. In microlithography, typically UV radiation casts an image of a time constant mask onto a photosensitive emulsion (or photoresist). Traditionally, mask aligners, steppers, scanners, and other kinds of non-optical techniques are used for high speed microfabrication of microstructures, but in case of MPL, some of these become redundant. Maskless lithography has two approaches to project a pattern: rasterized and vectorized. In the first one it utilizes generation of a time-variant intermittent image on an electronically modifiable (virtual) mask that is projected with known means (also known as Laser Direct Imaging and other synonyms). In the vectored approach, direct writing is achieved by radiation that is focused to a narrow beam that is scanned in vector form across the resist. The beam is then used to directly write the image into the photoresist, one or more pixels at a time. Also combinations of the two approaches are known, and it is not limited to optical radiation, but also extends into the UV, includes electron-beams and also mechanical or thermal ablation via MEMS devices. Advantages The MPL advantage is a high speed parallel manipulation of the pattern enabled by a large and cheap available computing capacity, which is not an issue with the standard approach that decouples to a slow, but precise structuring process for writing a mask from a fast and highly parallel copy process to achieve high replication throughputs as demanded by industry. A key advantage of maskless lithography is the ability to change lithography patterns from one run to the next, without incurring the cost of generating a new photomask. This may prove useful for double patterning or compensation of non-linear material behavior (e.g. when utilizing cheaper, non-crystalline substrate or to compensate for random placement errors of preceding structures). Disadvantages The main disadvantages are complexity and costs for the replication process, the limitation of rasterization in respect to oversampling causes aliasing artefact, especially with smaller structures (which may affect yield), while direct vector writing is limited in throughput. Also the digital throughput of such systems forms a bottleneck for high resolutions, i.e. structuring a 300mm diameter wafer with its area of ~707cm² requires about 10 TiB of data in a rasterized format without oversampling and thus suffers