A total dose greater than 5000 rads delivered to silicon-based devices in seconds to minutes will cause long-term degradation. In CMOS devices, the radiation creates electron–hole pairs in the gate insulation layers, which cause photocurrents during their recombination, and the holes trapped in the lattice defects in the insulator create a persistent gate biasing and influence the transistors' threshold voltage, making the N-type MOSFET transistors easier and the P-type ones more difficult to switch on. The accumulated charge can be high enough to keep the transistors permanently open (or closed), leading to device failure. Some self-healing takes place over time, but this effect is not too significant. This effect is the same as hot carrier degradation in high-integration high-speed electronics. Crystal oscillators are somewhat sensitive to radiation doses, which alter their frequency. The sensitivity can be greatly reduced by using swept quartz. Natural quartz crystals are especially sensitive. Radiation performance curves for TID testing may be generated for all resultant effects testing procedures. These curves show performance trends throughout the TID test process and are included in the radiation test report. Transient dose effects The short-time high-intensity pulse of radiation, typically occurring during a nuclear explosion. The high radiation flux creates photocurrents in the entire body of the semiconductor, causing transistors to randomly open, changing logical states of flip-flops and memory cells. Permanent damage may occur if the duration of the pulse is too long, or if the pulse causes junction damage or a latchup. Latchups are commonly caused by the X-rays and gamma radiation flash of a nuclear explosion. Crystal oscillators may stop oscillating for the duration of the flash due to prompt photoconductivity induced in quartz. Systems-generated EMP effects SGEMP are caused by the radiation flash traveling through the equipment and causing local ionization and electric currents in the material of the chips, circuit boards, electrical cables and cases. Digital damage: SEE Single-event effects (SEE) have been studied extensively since the 1970s. When a high-energy particle travels through a semiconductor, it leaves an ionized track behind. This ionization may cause a highly localized effect similar to the transient dose one - a benign glitch in output, a less benign bit flip in memory or a register or, especially in high-power transistors, a destructive latchup and burnout. Single event effects have importance for electronics in satellites, aircraft, and other civilian and military aerospace applications. Sometimes, in circuits not involving