it is sometimes used in VLSI instead of arsenic. Heavy doping with antimony is important for power devices. Heavily antimony-doped silicon has lower concentration of oxygen impurities; minimal autodoping effects make it suitable for epitaxial substrates. Bismuth is a promising dopant for long-wavelength infrared photoconduction silicon detectors, a viable n-type alternative to the p-type gallium-doped material. Lithium is used for doping silicon for radiation hardened solar cells. The lithium presence anneals defects in the lattice produced by protons and neutrons. Lithium can be introduced to boron-doped p+ silicon, in amounts low enough to maintain the p character of the material, or in large enough amount to counterdope it to low-resistivity n type. Other Germanium can be used for band gap engineering. Germanium layer also inhibits diffusion of boron during the annealing steps, allowing ultrashallow p-MOSFET junctions. Germanium bulk doping suppresses large void defects, increases internal gettering, and improves wafer mechanical strength. Silicon, germanium and xenon can be used as ion beams for pre-amorphization of silicon wafer surfaces. Formation of an amorphous layer beneath the surface allows forming ultrashallow junctions for p-MOSFETs. Nitrogen is important for growing defect-free silicon crystal. Improves mechanical strength of the lattice, increases bulk microdefect generation, suppresses vacancy agglomeration. Gold and platinum are used for minority carrier lifetime control. They are used in some infrared detection applications. Gold introduces a donor level 0.35 eV above the valence band and an acceptor level 0.54 eV below the conduction band. Platinum introduces a donor level also at 0.35 eV above the valence band, but its acceptor level is only 0.26 eV below conduction band; as the acceptor level in n-type silicon is shallower, the space charge generation rate is lower and therefore the leakage current is also lower than for gold doping. At high injection levels platinum performs better for lifetime reduction. Reverse recovery of bipolar devices is more dependent on the low-level lifetime, and its reduction is better performed by gold. Gold provides a good tradeoff between forward voltage drop and reverse recovery time for fast switching bipolar devices, where charge stored in base and collector regions must be minimized. Conversely, in many power transistors a long minority carrier lifetime is required to achieve good gain, and the gold/platinum impurities must be kept low. Other semiconductors In the following list the "(substituting X)" refers to all of the materials preceding said parenthesis. Gallium arsenide n-type: tellurium, sulfur (substituting