A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel, forming a double or even multi gate structure. These devices have been given the generic name "FinFETs" because the source/drain region forms fins on the silicon surface. The FinFET devices have significantly faster switching times and higher current density than planar CMOS (complementary metal–oxide–semiconductor) technology. FinFET is a type of non-planar transistor, or "3D" transistor. It is the basis for modern nanoelectronic semiconductor device fabrication. Microchips utilizing FinFET gates first became commercialized in the first half of the 2010s, and became the dominant gate design at 14 nm, 10 nm and 7 nm process nodes. It is common for a single FinFET transistor to contain several fins, arranged side by side and all covered by the same gate, that act electrically as one, to increase drive strength and performance. History After the MOSFET was first demonstrated by Mohamed Atalla and Dawon Kahng of Bell Labs in 1960, the concept of a double-gate thin-film transistor (TFT) was proposed by H. R. Farrah (Bendix Corporation) and R. F. Steinberg in 1967. A double-gate MOSFET was later proposed by Toshihiro Sekigawa of the Electrotechnical Laboratory (ETL) in a 1980 patent describing the planar XMOS transistor. Sekigawa fabricated the XMOS transistor with Yutaka Hayashi at the ETL in 1984. They demonstrated that short-channel effects can be significantly reduced by sandwiching a fully depleted silicon-on-insulator (SOI) device between two gate electrodes connected together. The first FinFET transistor type was called a "Depleted Lean-channel Transistor" or "DELTA" transistor, which was first fabricated in Japan by Hitachi Central Research Laboratory's Digh Hisamoto, Toru Kaga, Yoshifumi Kawamoto and Eiji Takeda in 1989. The gate of the transistor can cover and electrically contact the semiconductor channel fin on both the top and the sides or only on the sides. The former is called a tri-gate transistor and the latter a double-gate transistor. A double-gate transistor optionally can have each side connected to two different terminal or contacts. This variant is called split transistor. This enables more refined control of the operation of the transistor. Indonesian engineer Effendi Leobandung, while working at the University of Minnesota, published a paper with Stephen Y. Chou at the 54th Device Research Conference in 1996 outlining the